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Sample records for deposited tin films

  1. Pulsed laser deposition of nanostructured indium-tin-oxide film

    NASA Astrophysics Data System (ADS)

    Yong, Thian Kok; Nee, Chen Hon; Yap, Seong Shan; Siew, Wee Ong; Sáfran, György; Yap, Yoke Kin; Tou, Teck Yong

    2010-08-01

    Effects of O2, N2, Ar and He on the formation of micro- and nanostructured indium tin oxide (ITO) thin films were investigated in pulsed Nd:YAG laser deposition on glass substrate. For O2 and Ar, ITO resistivity of <= 4 × 10-4 Ωcm and optical transmittance of > 90% were obtained with substrate temperature of 250 °C. For N2 and He, low ITO resisitivity could be obtained but with poor optical transmittance. SEM images show nano-structured ITO thin films for all gases, where dense, larger and highly oriented, microcrystalline structures were obtained for deposition in O2 and He, as revealed from the XRD lines. EDX results indicated the inclusion of Ar and N2 at the expense of reduced tin (Sn) content. When the ITO films were applied for fabrication of organic light emitting devices (OLED), only those deposited in Ar and O2 produced comparable performance to single-layer OLED fabricated on the commercial ITO.

  2. Fabrication of ion conductive tin oxide-phosphate amorphous thin films by atomic layer deposition

    SciTech Connect

    Park, Suk Won; Jang, Dong Young; Kim, Jun Woo; Shim, Joon Hyung

    2015-07-15

    This work reports the atomic layer deposition (ALD) of tin oxide-phosphate films using tetrakis(dimethylamino)tin and trimethyl phosphate as precursors. The growth rates were 1.23–1.84 Å/cycle depending upon the deposition temperature and precursor combination. The ionic conductivity of the ALD tin oxide-phosphate films was evaluated by cross-plane impedance measurements in the temperature range of 50–300 °C under atmospheric air, with the highest conductivity measured as 1.92 × 10{sup −5} S cm{sup −1} at 300 °C. Furthermore, high-resolution x-ray photoelectron spectroscopy exhibited two O1s peaks that were classified as two subpeaks of hydroxyl ions and oxygen ions, revealing that the quantity of hydroxyl ions in the ALD tin oxide-phosphate films influences their ionic conductivity.

  3. Effect of precursor concentration and bath temperature on the growth of chemical bath deposited tin sulphide thin films

    NASA Astrophysics Data System (ADS)

    Jayasree, Y.; Chalapathi, U.; Uday Bhaskar, P.; Sundara Raja, V.

    2012-01-01

    SnS is a promising candidate for a low-cost, non-toxic solar cell absorber layer. Tin sulphide thin films have been deposited by chemical bath deposition technique from a solution containing stannous chloride, thioacetamide, ammonia and triethanolamine (TEA). The effects of concentration of tin salt, triethanolamine and bath temperature on the growth of tin sulphide films have been investigated in order to optimize the growth conditions to obtain tin monosulphide (SnS) films. SnS films obtained under optimized conditions were found to be polycrystalline in nature with orthorhombic structure. The optical band gap of these films was found to be 1.5 eV.

  4. Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering

    SciTech Connect

    Auger, M. A.; Vazquez, L.; Sanchez, O.; Cuerno, R.; Castro, M.; Jergel, M.

    2006-01-15

    We study surface kinetic roughening of TiN films grown on Si(100) substrates by dc reactive sputtering. The surface morphology of films deposited for different growth times under the same experimental conditions were analyzed by atomic force microscopy. The TiN films exhibit intrinsic anomalous scaling and multiscaling. The film kinetic roughening is characterized by a set of local exponent values {alpha}{sub loc}=1.0 and {beta}{sub loc}=0.39, and global exponent values {alpha}=1.7 and {beta}=0.67, with a coarsening exponent of 1/z=0.39. These properties are correlated to the local height-difference distribution function obeying power-law statistics. We associate this intrinsic anomalous scaling with the instability due to nonlocal shadowing effects that take place during thin-film growth by sputtering.

  5. Novel fabrication of an electrochromic antimony-doped tin oxide film using a nanoparticle deposition system

    NASA Astrophysics Data System (ADS)

    Kim, Hyungsub; Park, Yunchan; Choi, Dahyun; Ahn, Sung-Hoon; Lee, Caroline Sunyong

    2016-07-01

    Novel deposition method of Antimony-doped tin oxide (ATO) thin films was introduced using a nanoparticle deposition system (NPDS) to fabricate an electrochromic (EC) device. NPDS is a dry deposition method that simplifies the ATO deposition process by eliminating the need for solvents or binders. In this study, an ATO EC layer was deposited using NPDS. The surface morphology and electrochemical and optical transmittance properties were characterized. The optical transmittance change in the ATO EC device was ∼35% over the wavelength range of 350-800 nm, and the cyclic transmittance was stable. The ATO film deposited using NPDS, exhibited a coloration efficiency of 15.5 cm2 C-1. Therefore, our results suggest that ATO EC devices can be fabricated using a simple, cost-effective NPDS, which allows nanoparticles to be deposited directly without pre- or post-processing.

  6. Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

    SciTech Connect

    Lee, Byung Kook; Jung, Eunae; Kim, Seok Hwan; Moon, Dae Chul; Lee, Sun Sook; Park, Bo Keun; Hwang, Jin Ha; Chung, Taek-Mo; Kim, Chang Gyoun; An, Ki-Seok

    2012-10-15

    Thin film transistors (TFTs) with tin oxide films as the channel layer were fabricated by means of plasma enhanced atomic layer deposition (PE-ALD). The as-deposited tin oxide films show n-type conductivity and a nano-crystalline structure of SnO{sub 2}. Notwithstanding the relatively low deposition temperatures of 70, 100, and 130 °C, the bottom gate tin oxide TFTs show an on/off drain current ratio of 10{sup 6} while the device mobility values were increased from 2.31 cm{sup 2}/V s to 6.24 cm{sup 2}/V s upon increasing the deposition temperature of the tin oxide films.

  7. Structural properties of indium tin oxide thin films by glancing angle deposition method.

    PubMed

    Oh, Gyujin; Kim, Seon Pil; Lee, Kyoung Su; Kim, Eun Kyu

    2013-10-01

    We have studied the structural and optical properties of indium tin oxide (ITO) films deposited on sapphire substrates by electron beam evaporator with glancing angle deposition method. The ITO films were grown with different deposition angles of 0 degrees, 30 degrees, 45 degrees, 60 degrees at fixed deposition rate of 3 angstroms/s and with deposition rates of 2 angstroms/s, 3 angstroms/s, and 4angstroms/s at deposition angle of 45 degrees, respectively. From analysis of ellipsometry measurements, it appears that the void fraction of the films increased and their refractive indices decreased from 2.18 to 1.38 at the wavelength of 500 as increasing the deposition angle. The refractive index in the wavelength ranges of 550 nm-800 nm also depends on the deposition rates. Transmittance of ITO film with 235-nm-thickness grown at 60 degrees was covered about 20-80%, and then it was increased in visible wavelength range with increase of deposition angle. PMID:24245214

  8. Cathodic cage plasma deposition of TiN and TiO{sub 2} thin films on silicon substrates

    SciTech Connect

    Sousa, Romulo R. M. de; Sato, Patricia S.; Nascente, Pedro A. P.; Viana, Bartolomeu C.; Alves, Clodomiro; Nishimoto, Akio

    2015-07-15

    Cathodic cage plasma deposition (CCPD) was used for growing titanium nitride (TiN) and titanium dioxide (TiO{sub 2}) thin films on silicon substrates. The main advantages of the CCPD technique are the uniformity, tridimensionality, and high rate of the film deposition that occurs at higher pressures, lower temperatures, and lower treatment times than those used in conventional nitriding treatments. In this work, the influence of the temperature and gas atmosphere upon the characteristics of the deposited films was investigated. The TiN and TiO{sub 2} thin films were characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy to analyze their chemical, structural, and morphological characteristics, and the combination of these results indicates that the low-cost CCPD technique can be used to produce even and highly crystalline TiN and TiO{sub 2} films.

  9. Deposition of high quality TiN films by excimer laser ablation in reactive gas

    NASA Astrophysics Data System (ADS)

    Mihailescu, I. N.; Chitica, N.; Nistor, L. C.; Popescu, M.; Teodorescu, V. S.; Ursu, I.; Andrei, A.; Barborica, A.; Luches, A.; De Giorgi, M. Luisa; Perrone, A.; Dubreuil, B.; Hermann, J.

    1993-11-01

    A new laser method is proposed for the deposition of high purity, hard fcc TiN layers of unlimited thickness. The film thickness can be very finely controlled mainly through the intermediary of the number of applied laser pulses as the deposition rate is of only 0.02-0.05 nm/pulse. The ablation is promoted from a Ti target by high intensity multipulse excimer laser irradiation in a low pressure N2 ambient gas while the forming compound is collected on a Si single-crystalline wafer. The best results have been obtained for an ambient pressure of p=10-30 mTorr and a distance between the target and support of d=10 mm. It is shown that the formation of a liquid phase within the irradiated zone, maintained even after the end of a laser pulse, is the most important requisite for TiN formation. TiN is then ablated as a stoichio- metric phase.

  10. Indium Tin Oxide-Magnesium Fluoride Co-Deposited Films for Spacecraft Applications

    NASA Technical Reports Server (NTRS)

    Dever, Joycer A.; Rutledge, Sharon K.; Hambourger, Paul D.; Bruckner, Eric; Ferrante, Rhea; Pal, Anna Marie; Mayer, Karen; Pietromica, Anthony J.

    1998-01-01

    Highly transparent coatings with a maximum sheet resistivity between 10(exp 8) and 10(exp 9) ohms/square are desired to prevent charging of solar arrays for low Earth polar orbit and geosynchronous orbit missions. Indium tin oxide (ITO) and magnesium fluoride (MgF2) were ion beam sputter co-deposited onto fused silica substrates and were evaluated for transmittance, sheet resistivity and the effects of simulated space environments including atomic oxygen (AO) and vacuum ultraviolet (VUV) radiation. Optical properties and sheet resistivity as a function of MgF2 content in the films will be presented. Films containing 8.4 wt.% MgF2 were found to be highly transparent and provided sheet resistivity in the required range. These films maintained a high transmittance upon exposure to AO and to VUV radiation, although exposure to AO in the presence of charged species and intense electromagnetic radiation caused significant degradation in film transmittance. Sheet resistivity of the as-fabricated films increased with time in ambient conditions. Vacuum beat treatment following film deposition caused a reduction in sheet resistivity. However, following vacuum heat treatment, sheet resistivity values remained stable during storage in ambient conditions.

  11. Indium tin oxide films deposited by thermionic-enhanced DC magnetron sputtering on unheated polyethylene terephthalate polymer substrate

    SciTech Connect

    Lan, Y.F.; Peng, W.C.; Lo, Y.H.; He, J.L.

    2009-08-05

    Indium tin oxide thin films were deposited onto polyethylene terephthalate substrates via thermionic enhanced DC magnetron sputtering at low substrate temperatures. The structural, optical and electrical properties of these films are methodically investigated. The results show that compared with traditional sputtering, the films deposited with thermionic emission exhibit higher crystallinity, and their optical and electrical properties are also improved. Indium tin oxide films deposited by utilizing thermionic emission exhibit an average visible transmittance of 80% and an electrical resistivity of 4.5 x 10{sup -4} {Omega} cm, while films made without thermionic emission present an average visible transmittance of 74% and an electrical resistivity of 1.7 x 10{sup -3} {Omega} cm.

  12. Tungsten-doped tin oxide thin films prepared by pulsed plasma deposition

    SciTech Connect

    Huang Yanwei; Zhang Qun Li Guifeng; Yang Ming

    2009-05-15

    Transparent conductive oxide tungsten-doped tin oxide thin films were deposited on glass substrates from ceramic targets by the pulsed plasma deposition method. The structural, electrical and optical properties have been investigated as functions of tungsten doping content and oxygen partial pressure. The lowest resistivity of 2.1 x 10{sup -3} {omega}{center_dot}cm was reproducibly obtained, with carrier mobility of 30 cm{sup 2}V{sup -1}s{sup -1} and carrier concentration of 9.6 x 10{sup 19} cm{sup -3} at the oxygen partial pressure of 1.8 Pa. The average optical transmission was in excess of 80% in the visible region from 400 to 700 nm, with the optical band gap ranging from 3.91 to 4.02 eV.

  13. Aqueous phase deposition of dense tin oxide films with nano-structured surfaces

    SciTech Connect

    Masuda, Yoshitake Ohji, Tatsuki; Kato, Kazumi

    2014-06-01

    Dense tin oxide films were successfully fabricated in an aqueous solution. The pH of the solutions was controlled to pH 1.3 by addition of HCl. Precise control of solution condition and crystal growth allowed us to obtain dense tin oxide films. Concave–convex surface of fluorine-doped tin oxide (FTO) substrates was entirely-covered with the continuous films. The films were about 65 nm in thickness and had nano-structured surfaces. Morphology of the films was strikingly different from our previous reported nano-sheet assembled structures. The films were not removed from the substrates by strong water flow or air blow to show strong adhesion strength. The aqueous solution process can be applied to surface coating of various materials such as nano/micro-structured surfaces, particles, fibers, polymers, metals or biomaterials. - Graphical abstract: Dense tin oxide films of 65 nm were successfully fabricated in an aqueous solution. They had nano-structured surfaces. Concave-convex substrates were entirely-covered with the continuous films. - Highlights: • Dense tin oxide films of 65 nm were successfully fabricated in an aqueous solution. • They had nano-structured surfaces. • Concave–convex substrates were entirely-covered with the continuous films.

  14. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Deshpande, N. G.; Gudage, Y. G.; Ghosh, A.; Vyas, J. C.; Singh, F.; Tripathi, A.; Sharma, Ramphal

    2008-02-01

    We have examined the effect of swift heavy ions using 100 MeV Au8+ ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 × 10-4 Ω cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications.

  15. Thin films of tin(II) sulphide (SnS) by aerosol-assisted chemical vapour deposition (AACVD) using tin(II) dithiocarbamates as single-source precursors

    NASA Astrophysics Data System (ADS)

    Kevin, Punarja; Lewis, David J.; Raftery, James; Azad Malik, M.; O'Brien, Paul

    2015-04-01

    The synthesis of the asymmetric dithiocarbamates of tin(II) with the formula [Sn(S2CNRR')2] (where R=Et, R'=n-Bu (1); R=Me, R'=n-Bu (2); R=R'=Et (3)) and their use for the deposition of SnS thin films by aerosol-assisted chemical vapour deposition (AACVD) is described. The effects of temperature and the concentration of the precursors on deposition were investigated. The stoichiometry of SnS was best at higher concentrations of precursors (250 mM) and at 450 °C. The direct electronic band gap of the SnS produced by this method was estimated from optical absorbance measurements as 1.2 eV. The composition of films was confirmed by powder X-ray diffraction (p-XRD) and energy dispersive analysis of X-rays (EDAX) spectroscopy.

  16. Optical properties of undoped and tin-doped nanostructured In2O3 thin films deposited by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Fellahi, Nabil; Addou, Mohammed; Kachouane, Amina; El Jouad, Mohamed; Sofiani, Zouhair

    2016-05-01

    Tin-doped indium oxide (In2O3:Sn) thin films in different concentrations (Sn = 0, 3, 5, 8 at.%) were deposited by reactive chemical pulverisation spray pyrolysis on heated glass substrates at 500 °C. The effect of the tin dopant on the nonlinear optical properties was investigated using X-ray diffraction, transmission, electrical resistivity and third harmonic generation (THG). All films were polycrystalline, and crystallised in a cubic structure with a preferential orientation along the (400) direction. The Sn (5 at.%) doped In2O3 thin films exhibited a lower resistivity of 3 × 10-4 Ω cm, and higher transmission in the visible region of about 94%. Optical parameters, such as the extinction coefficient (k), refractive index (n) and energy band gap (Eg), were also studied to show the composition-dependence of tin-doped indium oxide films. The nonlinear properties of the In2O3:Sn thin films have been found to be influenced by doping concentration, and the best value of χ(3) = 3 × 10-11 (esu) was found for the 5 at.% doped sample. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  17. Influence of oxygen depletion layer on the properties of tin oxide gas-sensing films fabricated by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Natarajan, Gomathi; Cameron, David C.

    2009-06-01

    In this paper we report on the influence of film thickness on the electrical and gas-sensing properties of tin oxide thin films grown by atomic layer deposition (ALD) technique. The nature of the carrier and post-flow gases used in ALD was found to have a dramatic influence on the electrical conductance of the deposited films. Up to a film thickness of 50 nm the sheet conductance of the films increased with the thickness, and above 50 nm the sheet conductance was not significantly influenced by the film thickness. This effect was attributed to oxygen depletion at the film surface. When the depth of oxygen depletion ( d dep) was greater than or equal to the film thickness ( t), the sheet conductance was thickness dependant. On the other hand, when d dep≤ t, the sheet conductance was independent of the film thickness but depended on the depth of the oxygen depletion. This proposed explanation was verified by subjecting the films to different lengths of post-annealing in an oxygen depleted atmosphere. Gas-sensing functionality of the films with various thicknesses was examined. It was observed that the film thickness had a significant influence on the gas-sensing property of the films. When the thickness was greater than 40 nm, the sensitivity of the films to ethanol was found to follow the widely reported trend, i.e., the sensitivity decreases when the film thickness increases. Below the film thickness of 40 nm the sensitivity decreases as film thickness decreases, and we propose a model to explain this observation based on the increase in resistance due to multiple grain boundaries.

  18. Smart Windows, Switchable between Transparent, Mirror, and Black States, Fabricated Using Rough and Smooth Indium Tin Oxide Films Deposited by Spray Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Onodera, Ryou; Seki, Yoshiyuki; Seki, Shigeyuki; Yamada, Katsumi; Sawada, Yutaka; Uchida, Takayuki

    2013-02-01

    Two types of indium-tin oxide films, rough and smooth, with an average grain size of 434 and 71 nm, respectively, were deposited by spray pyrolysis chemical vapor deposition. Using both these films, we fabricated glare tunable transparent electrochemical devices exhibiting reversible optical changes between transparent, mirror, and black states, without any treatments. Under zero bias conditions, the transmittance of the transparent state reached 81.1% at 700 nm. With a bias of -2.5 V, the reflectance of the mirror state reached 82.0% at 700 nm. The total transmittances in the mirror and black state amounted to 0.6% in the visible range.

  19. Growth mechanism and optical properties of Ti thin films deposited onto fluorine-doped tin oxide glass substrate

    SciTech Connect

    Einollahzadeh-Samadi, Motahareh; Dariani, Reza S.

    2015-03-15

    In this work, a detailed study of the influence of the thickness on the morphological and optical properties of titanium (Ti) thin films deposited onto rough fluorine-doped tin oxide glass by d.c. magnetron sputtering is carried out. The films were characterized by several methods for composition, crystallinity, morphology, and optical properties. Regardless of the deposition time, all the studied Ti films of 400, 1500, 2000, and 2500 nm in thickness were single crystalline in the α-Ti phase and also very similar to each other with respect to composition. Using the atomic force microscopy (AFM) technique, the authors analyzed the roughness evolution of the Ti films characteristics as a function of the film thickness. By applying the dynamic scaling theory to the AFM images, a steady growth roughness exponent α = 0.72 ± 0.02 and a dynamic growth roughness exponent β = 0.22 ± 0.02 were determined. The value of α and β are consistent with nonlinear growth model incorporating random deposition with surface diffusion. Finally, measuring the reflection spectra of the samples by a spectrophotometer in the spectral range of 300–1100 nm allowed us to investigate the optical properties. The authors observed the increments of the reflection of Ti films with thickness, which by employing the effective medium approximation theory showed an increase in thickness followed by an increase in the volume fraction of metal.

  20. Thin Fluorine-Doped Tin Oxide Films Prepared Using an Electric Field-Modified Spray Pyrolysis Deposition Technique

    NASA Astrophysics Data System (ADS)

    Gupta, Archana; Pandya, Dinesh K.; Kashyap, Subhash C.

    2004-12-01

    Very thin fluorine-doped tin oxide films (60-70 nm) were prepared on glass substrates at low deposition temperatures (275-300°C), these films showed an electrical resistivity of 3.2 × 10-4Ω-cm and a transparency of 88% at 625 nm with the application of a dc electric field on the film surface during growth using a spray pyrolysis deposition technique. In this first study of its kind, the applied electric field during growth by spray pyrolysis resulted in the reduction in the critical thickness and the increases in both the electrical conductivity and transparency of continuous films. The obtained X-ray diffraction (XRD) patterns showed that the films prepared with an electric field were polycrystalline, whereas those prepared without an electric field were amorphous. This method shows potential for producing very thin oxide films at a low deposition temperature with a high growth rate, an enhanced optical quality and an improved electrical conductivity.

  1. Effect of tri-sodium citrate concentration on structural, optical and electrical properties of chemically deposited tin sulfide films

    NASA Astrophysics Data System (ADS)

    Gode, F.; Guneri, E.; Baglayan, O.

    2014-11-01

    Tin sulfide thin films were deposited onto glass substrates by chemical bath deposition. The effects of molar concentration of the complexing agent, tri-sodium citrate, on the structural, morphological, optical and electrical properties of the films were investigated. The films are characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, optical absorption spectroscopy and Hall effect measurements. Polycrystalline film structure in orthorhombic phase was determined. Flower-like spherical grains are observed on the surface. While their average size increased from 345 nm to 750 nm when the tri-sodium citrate concentration was increased from 6.4 × 10-3 M to 8.0 × 10-3 M, the surface roughness varied in an opposite manner from approximately 120.18 nm to 29.36 nm. For these concentrations, optical band gap of the films decreased from 1.40 eV to 1.17 eV, whereas the Hall conductivity, mobility and carrier concentration of the films increased slightly from 5.91 × 10-5 to 8.78 × 10-5 (Ω cm)-1, from 148 to 228 cm2 V-1 s-1 and from 1.73 × 1012 to 3.59 × 1012 cm-1, respectively.

  2. The effects of two thick film deposition methods on tin dioxide gas sensor performance.

    PubMed

    Bakrania, Smitesh D; Wooldridge, Margaret S

    2009-01-01

    This work demonstrates the variability in performance between SnO(2) thick film gas sensors prepared using two types of film deposition methods. SnO(2) powders were deposited on sensor platforms with and without the use of binders. Three commonly utilized binder recipes were investigated, and a new binder-less deposition procedure was developed and characterized. The binder recipes yielded sensors with poor film uniformity and poor structural integrity, compared to the binder-less deposition method. Sensor performance at a fixed operating temperature of 330 °C for the different film deposition methods was evaluated by exposure to 500 ppm of the target gas carbon monoxide. A consequence of the poor film structure, large variability and poor signal properties were observed with the sensors fabricated using binders. Specifically, the sensors created using the binder recipes yielded sensor responses that varied widely (e.g., S = 5 - 20), often with hysteresis in the sensor signal. Repeatable and high quality performance was observed for the sensors prepared using the binder-less dispersion-drop method with good sensor response upon exposure to 500 ppm CO (S = 4.0) at an operating temperature of 330 °C, low standard deviation to the sensor response (±0.35) and no signal hysteresis.

  3. The effect of deposition atmosphere on the chemical composition of TiN and ZrN thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Craciun, D.; Socol, G.; Stefan, N.; Dorcioman, G.; Hanna, M.; Taylor, C. R.; Lambers, E.; Craciun, V.

    2014-05-01

    Very thin TiN and ZrN films (<500 nm) were grown on (1 0 0) Si substrates at temperatures up to 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under residual vacuum or various mixtures of CH4 or N2. Auger electron spectroscopy investigations found that films contained a relatively low oxygen concentration, usually below 3.0 at%. Films deposited under residual vacuum or very low N2 pressures (<3 × 10-3 Pa) contained 3-6 at% C atoms in the bulk. This fraction grew to 8-10 at% when the deposition was performed under an atmosphere of 2 × 10-3 Pa CH4. To avoid C atoms incorporation into the bulk a deposition pressure of 10 Pa N2 was required. X-ray photoelectron spectroscopy investigations found that oxygen was mostly bonded in an oxynitride type of compound, while carbon was bonded into a metallic carbide. The presence of C atoms in the chemical composition of the TiN or ZrN improved the measured hardness of the films.

  4. Laser scribing of indium tin oxide (ITO) thin films deposited on various substrates for touch panels

    NASA Astrophysics Data System (ADS)

    Tseng, Shih-Feng; Hsiao, Wen-Tse; Huang, Kuo-Cheng; Chiang, Donyau; Chen, Ming-Fei; Chou, Chang-Pin

    2010-12-01

    In this study, a Nd:YAG laser with wavelength of 1064 nm is used to scribe the indium tin oxide (ITO) thin films coated on three types of substrate materials, i.e. soda-lime glass, polycarbonate (PC), and cyclic-olefin-copolymer (COC) materials with thickness of 20 nm, 30 nm, and 20 nm, respectively. The effect of exposure time adjusted from 10 μs to 100 μs on the ablated mark width, depth, and electrical properties of the scribed film was investigated. The maximum laser power of 2.2 W was used to scribe these thin films. In addition, the surface morphology, surface reaction, surface roughness, optical properties, and electrical conductivity properties were measured by a scanning electron microscope, a three-dimensional confocal laser scanning microscope, an atomic force microscope, and a four-point probe. The measured results of surface morphology show that the residual ITO layer was produced on the scribed path with the laser exposure time at 10 μs and 20 μs. The better edge qualities of the scribed lines can be obtained when the exposure time extends from 30 μs to 60 μs. When the laser exposure time is longer than 60 μs, the partially burned areas of the scribed thin films on PC and COC substrates are observed. Moreover, the isolated line width and resistivity values increase when the laser exposure time increases.

  5. Investigation of thermal and hot-wire chemical vapor deposition copper thin films on TiN substrates using CupraSelect as precursor.

    PubMed

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    Copper films were deposited on oxidized Si substrates covered with TiN using a novel chemical vapor deposition reactor in which reactions were assisted by a heated tungsten filament (hot-wire CVD, HWCVD). Liquid at room temperature hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) was directly injected into the reactor with the aid of a direct-liquid injection (DLI) system using N2 as carrier gas. The deposition rates of HWCVD Cu films obtained on TiN covered substrates were found to increase with filament temperature (65 and 170 degrees C were tested). The resistivities of HWCVD Cu films were found to be higher than for thermally grown films due to the possible presence of impurities into the Cu films from the incomplete dissociation of the precursor and W impurities caused by the presence of the filament. For HWCVD films grown at a filament temperature of 170 degrees C, smaller grains are formed than at 65 degrees C as shown from the taken SEM micrographs. XRD diffractograms taken on Cu films deposited on TiN could not reveal the presence of W compounds originating from the filament because the relative peak was masked by the TiN [112] peak. PMID:22097549

  6. Nd:YVO4 laser direct ablation of indium tin oxide films deposited on glass and polyethylene terephthalate substrates.

    PubMed

    Wang, Jian-Xun; Kwon, Sang Jik; Han, Jae-Hee; Cho, Eou Sik

    2013-09-01

    A Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser was applied to obtain the indium tin oxide (ITO) patterns on flexible polyethylene terephthalate (PET) substrate by a direct etching method. After the ITO films were deposited on a soda-lime glass and PET substrate, laser ablations were carried out on the ITO films for various conditions and the laser ablated results on the ITO films were investigated and analyzed considering the effects of substrates on the laser etching. The laser ablated widths on ITO deposited on glass were found to be much narrower than those on ITO deposited on PET substrate, especially, at a higher scanning speed of laser beam such as 1000 mm/s and 2000 mm/s. As the thermal conductivity of glass substrate is about 7.5 times higher than that of PET, more thermal energy would be spread and transferred to lateral direction in the ITO film in case of PET substrate. PMID:24205645

  7. Effect of thermal processing on silver thin films of varying thickness deposited on zinc oxide and indium tin oxide

    SciTech Connect

    Sivaramakrishnan, K.; Ngo, A. T.; Alford, T. L.; Iyer, S.

    2009-03-15

    Silver films of varying thicknesses (25, 45, and 60 nm) were deposited on indium tin oxide (ITO) on silicon and zinc oxide (ZnO) on silicon. The films were annealed in vacuum for 1 h at different temperatures (300-650 deg. C). Four-point-probe measurements were used to determine the resistivity of the films. All films showed an abrupt change in resistivity beyond an onset temperature that varied with thickness. Rutherford backscattering spectrometry measurements revealed agglomeration of the Ag films upon annealing as being responsible for the resistivity change. X-ray pole figure analysis determined that the annealed films took on a preferential <111> texturing; however, the degree of texturing was significantly higher in Ag/ZnO/Si than in Ag/ITO/Si samples. This observation was accounted for by interface energy minimization. Atomic force microscopy (AFM) measurements revealed an increasing surface roughness of the annealed films with temperature. The resistivity behavior was explained by the counterbalancing effects of increasing crystallinity and surface roughness. Average surface roughness obtained from the AFM measurements were also used to model the agglomeration of Ag based on Ostwald ripening theory.

  8. Influence of a TiN interlayer on the microstructure and mechanical properties of hydroxyapatite films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Nelea, Valentin D.; Ristoscu, Carmen; Colis, Silviu; Arens, Simona; Pelletier, Herve; Mihailescu, Ion N.; Mille, Pierre

    2001-04-01

    Crystalline hydroxyapatite (HA) thin films grown on metallic substrates is the best choice for bone restoration. This is due to the good biological compatibility of the hydroxyapatite material combined with the good mechanical characteristics of the substrates. We deposit HA thin films by Pulsed Laser Deposition (PLD) in vacuum at room temperature using a KrF* excimer laser ((lambda) equals 248 nm, (tau) FWHM >= 20 ns). The depositions were performed directly on Ti-5Al-2.5Fe or on substrates previously coated with a TiN buffer layer. The HA deposited structures were characterized by complementary techniques: GIXRD, SEM, TEM, SAED, EDS and nanoindentation. Properties of the HA films grown with and without the TiN buffer were discussed in term of microstructure and mechanical behavior. The films with interlayer preserve the stoichiometry, are completely recrystallized and present better mechanical characteristics as compared with those without buffer.

  9. Surface modification of cadmium sulfide thin film honey comb nanostructures: Effect of in situ tin doping using chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Wilson, K. C.; Basheer Ahamed, M.

    2016-01-01

    Even though nanostructures possess large surface to volume ratio compared to their thin film counterpart, the complicated procedure that demands for the deposition on a substrate kept them back foot in device fabrication techniques. In this work, a honey comb like cadmium sulfide (CdS) thin films nanostructure are deposited on glass substrates using simple chemical bath deposition technique at 65 °C. Energy band gaps, film thickness and shell size of the honey comb nanostructures are successfully controlled using tin (Sn) doping and number of shells per unit area is found to be maximum for 5% Sn doped (in the reaction mixture) sample. X-ray diffraction and optical absorption analysis showed that cadmium sulfide and cadmium hydroxide coexist in the samples. TEM measurements showed that CdS nanostructures are embedded in cadmium hydroxide just like "plum pudding". Persistent photoconductivity measurements of the samples are also carried out. The decay constants found to be increased with increases in Sn doping.

  10. Synthesis, Deposition, and Microstructure Development of Thin Films Formed by Sulfidation and Selenization of Copper Zinc Tin Sulfide Nanocrystals

    NASA Astrophysics Data System (ADS)

    Chernomordik, Boris David

    Significant reduction in greenhouse gas emission and pollution associated with the global power demand can be accomplished by supplying tens-of-terawatts of power with solar cell technologies. No one solar cell material currently on the market is poised to meet this challenge due to issues such as manufacturing cost, material shortage, or material toxicity. For this reason, there is increasing interest in efficient light-absorbing materials that are comprised of abundant and non-toxic elements for thin film solar cell. Among these materials are copper zinc tin sulfide (Cu2ZnSnS4, or CZTS), copper zinc tin selenide (Cu2ZnSnSe4, or CZTSe), and copper zinc tin sulfoselenide alloys [Cu2ZnSn(SxSe1-x )4, or CZTSSe]. Laboratory power conversion efficiencies of CZTSSe-based solar cells have risen to almost 13% in less than three decades of research. Meeting the terawatt challenge will also require low cost fabrication. CZTSSe thin films from annealed colloidal nanocrystal coatings is an example of solution-based methods that can reduce manufacturing costs through advantages such as high throughput, high material utilization, and low capital expenses. The film microstructure and grain size affects the solar cell performance. To realize low cost commercial production and high efficiencies of CZTSSe-based solar cells, it is necessary to understand the fundamental factors that affect crystal growth and microstructure evolution during CZTSSe annealing. Cu2ZnSnS4 (CZTS) nanocrystals were synthesized via thermolysis of single-source cation and sulfur precursors copper, zinc and tin diethyldithiocarbamates. The average nanocrystal size could be tuned between 2 nm and 40 nm, by varying the synthesis temperature between 150 °C and 340 °C. The synthesis is rapid and is completed in less than 10 minutes. Characterization by X-ray diffraction, Raman spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy confirm that the nanocrystals are nominally

  11. Growth of TiN films at low temperature

    NASA Astrophysics Data System (ADS)

    Wei, L. I.; Jun-Fang, Chen

    2007-06-01

    Thermodynamic analysis on growth of TiN films was given. The driving force for deposition of TiN is dependent on original Ti(g)/N(g) ratio and original partial pressure of N(g). TiN films were deposited by ion beam assisted electron beam evaporation system under suitable nitrogen gas flow rate at 523 K while the density of plasma varied with diverse discharge pressure had been investigated by the Langmuir probe. TiN films were characterized by means of Fourier transform infrared absorption spectrum (FTIR), X-ray diffraction (XRD) and observed by means of atom force microscopy (AFM). The results of these measurements indicated preferential TiN(1 1 1) films were deposited on substrate of Si(1 0 0) and glass by ion beam assisted electron beam evaporation system at low temperature, and it was possible for the deposition of TiN films with a preferential orientation or more orientations if the nitrogen gas flow rate increased enough. Sand Box was used to characterize the fractal dimension of surface of TiN films. The results showed the fractal dimension was a little more than 1.7, which accorded with the model of diffusion limited aggregation (DLA), and the fractal dimension of TiN films increased with increase of the temperature of deposition.

  12. Synthesis, Deposition, and Microstructure Development of Thin Films Formed by Sulfidation and Selenization of Copper Zinc Tin Sulfide Nanocrystals

    NASA Astrophysics Data System (ADS)

    Chernomordik, Boris David

    Significant reduction in greenhouse gas emission and pollution associated with the global power demand can be accomplished by supplying tens-of-terawatts of power with solar cell technologies. No one solar cell material currently on the market is poised to meet this challenge due to issues such as manufacturing cost, material shortage, or material toxicity. For this reason, there is increasing interest in efficient light-absorbing materials that are comprised of abundant and non-toxic elements for thin film solar cell. Among these materials are copper zinc tin sulfide (Cu2ZnSnS4, or CZTS), copper zinc tin selenide (Cu2ZnSnSe4, or CZTSe), and copper zinc tin sulfoselenide alloys [Cu2ZnSn(SxSe1-x )4, or CZTSSe]. Laboratory power conversion efficiencies of CZTSSe-based solar cells have risen to almost 13% in less than three decades of research. Meeting the terawatt challenge will also require low cost fabrication. CZTSSe thin films from annealed colloidal nanocrystal coatings is an example of solution-based methods that can reduce manufacturing costs through advantages such as high throughput, high material utilization, and low capital expenses. The film microstructure and grain size affects the solar cell performance. To realize low cost commercial production and high efficiencies of CZTSSe-based solar cells, it is necessary to understand the fundamental factors that affect crystal growth and microstructure evolution during CZTSSe annealing. Cu2ZnSnS4 (CZTS) nanocrystals were synthesized via thermolysis of single-source cation and sulfur precursors copper, zinc and tin diethyldithiocarbamates. The average nanocrystal size could be tuned between 2 nm and 40 nm, by varying the synthesis temperature between 150 °C and 340 °C. The synthesis is rapid and is completed in less than 10 minutes. Characterization by X-ray diffraction, Raman spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy confirm that the nanocrystals are nominally

  13. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-12

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  14. A comparison of ZnO films deposited on indium tin oxide and soda lime glass under identical conditions

    SciTech Connect

    Deka, Angshuman; Nanda, Karuna Kar

    2013-06-15

    ZnO films have been grown via a vapour phase transport (VPT) on soda lime glass (SLG) and indium-tin oxide (ITO) coated glass. ZnO film on ITO had traces of Zn and C which gives them a dark appearance while that appears yellowish-white on SLG. X-ray photoelectron spectroscopy studies confirm the traces of C in the form of C-O. The photoluminescence studies reveal a prominent green luminescence band for ZnO film on ITO.

  15. Radiation-induced deposition of transparent conductive tin oxide coatings

    NASA Astrophysics Data System (ADS)

    Umnov, S.; Asainov, O.; Temenkov, V.

    2016-04-01

    The study of tin oxide films is stimulated by the search for an alternative replacement of indium-tin oxide (ITO) films used as transparent conductors, oxidation catalysts, material gas sensors, etc. This work was aimed at studying the influence of argon ions irradiation on optical and electrical characteristics of tin oxide films. Thin films of tin oxide (without dopants) were deposited on glass substrates at room temperature using reactive magnetron sputtering. After deposition, the films were irradiated with an argon ion beam. The current density of the beam was (were) 2.5 mA/cm2, and the particles energy was 300-400 eV. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties were investigated by photometry in the range of 300-1100 nm. Films structural properties were studied using X-ray diffraction. The diffractometric research showed that the films, deposited on a substrate, had a crystal structure, and after argon ions irradiation they became quasi-crystalline (amorphous). It has been found that the transmission increases proportionally with the irradiation time, however the sheet resistance increases disproportionally. Tin oxide films (thickness ~30 nm) with ~100% transmittance and sheet resistance of ~100 kOhm/sq. were obtained. The study has proved to be prospective in the use of ion beams to improve the properties of transparent conducting oxides.

  16. Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

    PubMed

    Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

    2016-02-01

    Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%. PMID:27433704

  17. Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

    PubMed

    Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

    2016-02-01

    Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

  18. Effect of solvent volume on the physical properties of undoped and fluorine doped tin oxide films deposited using a low-cost spray technique

    NASA Astrophysics Data System (ADS)

    Muruganantham, G.; Ravichandran, K.; Saravanakumar, K.; Ravichandran, A. T.; Sakthivel, B.

    2011-12-01

    Undoped and fluorine doped tin oxide films were deposited from starting solutions having different values of solvent volume (10-50 ml) by employing a low cost and simplified spray technique using perfume atomizer. X-ray diffraction studies showed that there was a change in the preferential orientation from (2 1 1) plane to (1 1 0) plane as the volume of the solvent was increased. The sheet resistance ( Rsh) of undoped SnO 2 film was found to be minimum (13.58 KΩ/□) when the solvent volume was lesser (10 ml) and there was a sharp increase in Rsh for higher values of solvent volume. Interestingly, it was observed that while the Rsh increases sharply with the increase in solvent volume for undoped SnO 2 films, it decreases gradually in the case of fluorine doped SnO 2 films. The quantitative analysis of EDAX confirmed that the electrical resistivity of the sprayed tin oxide film was mainly governed by the number of oxygen vacancies and the interstitial incorporation of Sn atoms which in turn was governed by the impinging flux on the hot substrate. The films were found to have good optical characteristics suitable for opto-electronic devices.

  19. Electrochromic characteristics of niobium-doped titanium oxide film on indium tin oxide/glass by liquid phase deposition

    NASA Astrophysics Data System (ADS)

    Lee, Ming-Kwei; Lee, Chia-Jung

    2015-10-01

    Ammonium hexafluorotitanate and boric acid aqueous solutions were used as precursors for the growth of titanium oxide films on indium tin oxide (ITO)/glass substrate. For as-grown titanium oxide film used in an electrochromic device, Li+ ions from electrolyte will be trapped to hydroxyl groups and degrade the electrochromic durability during the cyclic voltammogram characterization. For niobium doped titanium oxide film, lower growth rate from more HF incorporation from the niobium doped solution and rougher surface morphology from the formation of nanocrystals were obtained. However, niobium doping reduces hydroxyl groups and the electrochromic durability is enhanced from 5 × 103 to 1 × 104 times. The transmittance is enhanced from 37 to 51% at the wavelength of 550 nm.

  20. Structural and optical properties of Tin sulphide thin films

    SciTech Connect

    Akkari, A.; Ben Nasr, T.; Kamoun, N.

    2007-09-19

    Tin sulphide SnS thin films were deposited on glass substrates using the chemical bath deposition technique (CBD). By investigating the influence of triethanolamine (TEA) concentration on the properties of deposited films, we obtained the optimum deposition parameter. These films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM) analysis and spectrophotometric measurements. The obtained thin films exhibit the orthorhombic structure and the direct band gap energy is found to be about 1.65 eV, for films prepared at TEA concentration films equal to 13.5 M.

  1. Interdependence between stress, preferred orientation, and surface morphology of nanocrystalline TiN thin films deposited by dual ion beam sputtering

    SciTech Connect

    Abadias, G.; Tse, Y.Y.; Guerin, Ph.; Pelosin, V.

    2006-06-01

    To clarify the underlying mechanisms that cause the preferred orientation in TiN films, we investigated the evolution with the thickness of the texture, surface morphology, and residual stress in TiN thin films deposited by dual ion beam sputtering. The films, with thickness h ranging from 50 to 300 nm, were grown on oxidized Si substrates using a primary Ar ion beam accelerated under 1.2 kV and different voltages V{sub a} of the (Ar+N{sub 2}) assistance beam: 25, 50, and 150 V. The influence of temperature was also investigated by varying the substrate temperature T{sub s} (25-300 deg. C) during growth or by performing a postdeposition annealing. X-ray diffraction (XRD) as well as transmission electron microscopy were used to study the microstructure and changes of texture with thickness h, while x-ray reflectivity and atomic force microscopy measurements were performed to determine the surface roughness. Residual stresses were measured by XRD and analyzed using a triaxial stress model. The crystallite group method was used for a strain determination of crystallites having different fiber axis directions, i.e., when a mixed texture exists. The surface roughness is found to increase with V{sub a} and T{sub s} due to the resputtering effect of the film surface. XRD reveals that for a small thickness (h{approx}50 nm) the TiN films exhibit a strong (002) texture independent of V{sub a}. For a larger thickness (100deposition conditions. When a mixed texture exists, the analysis reveals that (111)-oriented grains sustain stresses that are about 20% more compressive than those sustained by (002

  2. Structural, optical and electrical properties studies of ultrasonically deposited tin oxide (SnO2) thin films with different substrate temperatures

    NASA Astrophysics Data System (ADS)

    Rahal, Achour; Benhaoua, Atmane; Jlassi, Mohamed; Benhaoua, Boubaker

    2015-10-01

    Undoped thin films of tin oxide (SnO2) were deposited onto microscopic glass substrates using an ultrasonic spray pyrolysis technique. The thin films were deposited on glass at large scale of temperature ranged in 400-500 °C and stepped by 20 °C. The effect of substrate temperature on structural, electrical and optical properties was studied using X-ray diffraction (XRD), UV-visible spectrophotometer and a conventional four point probe technique. XRD showed that all the films were polycrystalline with major reflex along (1 1 0) plane, manifested with amelioration of grain size from 6.51 to 29.80 nm upon increasing substrate temperature. Lattice constant 'a', 'c', microstrains and dislocation densities were affected by the substrate temperature. Transmittance of about 75% at more than 800 nm for films prepared at 480 °C has been observed. With increasing the substrate temperature the direct band gap energy was averaged in 4.03-4.133 eV. Plasma frequency (ωp) was estimated to be 4 ṡ 1014 Hz and optically estimated free electrons number N leading to predict that, in SnO2 material, the effective density of conduction band states is about 5 ṡ 1019 cm-3. Among all the samples the film that deposited at 480 °C exhibited lowest resistivity of about 9.19 × 10-3 Ω cm.

  3. Hydroxyapatite thin films growth by pulsed laser deposition: effects of the Ti alloys substrate passivation on the film properties by the insertion of a TiN buffer layer

    NASA Astrophysics Data System (ADS)

    Nelea, Valentin D.; Ristoscu, Carmen; Ghica, Cornel; Pelletier, Herve; Mihailescu, Ion N.; Mille, Pierre

    2001-06-01

    Hydroxyapatite (HA), Ca5(PO4)3OH, is now widely used in stomatology and orthopedic surgery. Due to a good biocompatibility combined favorable bioactivity make as HA to be considered as a challenge to successful bone repair. We grow HA thin films on Ti-5Al-2.5Fe alloy substrate by pulsed laser deposition (PLD) technique. The films were deposited in vacuum at room temperature using a KrF excimer laser ((lambda) equals 248 nm, (tau) FWHM >= 20 ns). After deposition the HA films were annealed at 550 degree(s)C in ambient air. The insertion of a bioinert TiN buffer layer at the HA film-metallic substrate interface was studied in terms of HA film microstructure and mechanical properties. SEM, TEM and SAED analysis structurally characterized films. The mechanical properties were evaluated by nanoindentation tests in static and scratch modes. Films with TiN interlayer contain uniquely crystalline HA phase and present better mechanical characteristics as compared with those deposited directly on Ti-alloy substrate.

  4. Patterning of Indium Tin Oxide Films

    NASA Technical Reports Server (NTRS)

    Immer, Christopher

    2008-01-01

    A relatively rapid, economical process has been devised for patterning a thin film of indium tin oxide (ITO) that has been deposited on a polyester film. ITO is a transparent, electrically conductive substance made from a mixture of indium oxide and tin oxide that is commonly used in touch panels, liquid-crystal and plasma display devices, gas sensors, and solar photovoltaic panels. In a typical application, the ITO film must be patterned to form electrodes, current collectors, and the like. Heretofore it has been common practice to pattern an ITO film by means of either a laser ablation process or a photolithography/etching process. The laser ablation process includes the use of expensive equipment to precisely position and focus a laser. The photolithography/etching process is time-consuming. The present process is a variant of the direct toner process an inexpensive but often highly effective process for patterning conductors for printed circuits. Relative to a conventional photolithography/ etching process, this process is simpler, takes less time, and is less expensive. This process involves equipment that costs less than $500 (at 2005 prices) and enables patterning of an ITO film in a process time of less than about a half hour.

  5. Effect of Self-Assembled Monolayer Modification on Indium-Tin Oxide Surface for Surface-Initiated Vapor Deposition Polymerization of Carbazole Thin Films

    NASA Astrophysics Data System (ADS)

    Yuya Umemoto,; Seong-Ho Kim,; Rigoberto C. Advincula,; Kuniaki Tanaka,; Hiroaki Usui,

    2010-04-01

    With the aim of controlling the interface between an inorganic electrode and an organic layer, a surface-initiated vapor deposition polymerization method was employed to prepare carbazole polymer thin films that are chemically bound to an indium-tin oxide (ITO) surface. A self-assembled monolayer (SAM) that has an azo initiator as a terminal group was prepared on an ITO surface, on which carbazole acrylate monomers were evaporated under ultraviolet (UV) irradiation. The surface morphological characteristics of the films prepared with/without UV irradiation and with/without the SAM were compared. It was found that the UV irradiation leads to the polymerization of carbazole monomers irrespective of the type of substrate used. On the other hand, the surface morphological characteristics were largely dependent on the existence of the SAM. Uniform and smooth polymer thin films were obtained only when the monomers were evaporated on the SAM-modified surface under UV irradiation. A comparison of film growth characteristics on a UV-ozone-treated ITO surface suggested that the formation of uniform films was made possible not by the modification of surface energy but by the growth of the polymers chemically bound to the substrate surface.

  6. Characteristics of Fluorine-doped tin oxide thin films grown by Streaming process for Electrodeless Electrochemical Deposition

    NASA Astrophysics Data System (ADS)

    Yusuf, Gbadebo; Khalilzadeh-Rezaie, Farnood; Cleary, Justin W.; Oladeji, Isaiah O.; Suu, Koukou; Schoenfeld, Winston V.; Peale, Robert E.; Awodugba, Ayodeji O.

    2015-04-01

    This work investigated the characteristics of SnO2: F films grown by Streaming Process for Electrodeless Electrochemical Deposition (SPEED). Stannic chloride (SnCl4) and ammonium fluoride (NH4 F) was dissolved in a mixture of deionized water and organic solvents. The preheated substrate temperature was varied between 450 and 530° C. High quality SnO2: F films were grown at all the substrate temperatures studied. The typical film thickness was 250 nm. XRD shows that the grown films are polycrystalline SnO2 with a tetragonal crystal structure. The average optical transmission of the films was around 93% throughout the wavelength of 400 to 1000 nm. The lowest electrical resistivity achieved was 6 x 10-4 Ω cm. The Hall measurements showed that the film is an n-type semiconductor, with the highest carrier mobility of 8.3 cm2/V.s, and concentration of 1 x 1021 cm-3. The direct band gap was determined to be 4 eV from the transmittance spectrum.

  7. Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

    SciTech Connect

    Warner, Ellis J.; Gladfelter, Wayne L.; Johnson, Forrest; Campbell, Stephen A.

    2015-03-15

    Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. % Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.

  8. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect

    Nie, Man Mete, Tayfun; Ellmer, Klaus

    2014-04-21

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w ∼ d{sub f}{sup β}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent β is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ξ increases with film thickness also with a power law according to ξ ∼ d{sub f}{sup z} with exponents z = 0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2 + 1 dimensions is discussed for the ITO growth in this work.

  9. Lithium intercalation in sputter deposited antimony-doped tin oxide thin films: Evidence from electrochemical and optical measurements

    SciTech Connect

    Montero, J. Granqvist, C. G.; Niklasson, G. A.; Guillén, C.; Herrero, J.

    2014-04-21

    Transparent conducting oxides are used as transparent electrical contacts in a variety of applications, including in electrochromic smart windows. In the present work, we performed a study of transparent conducting antimony-doped tin oxide (ATO) thin films by chronopotentiometry in a Li{sup +}-containing electrolyte. The open circuit potential vs. Li was used to investigate ATO band lineups, such as those of the Fermi level and the ionization potential, as well as the dependence of these lineups on the preparation conditions for ATO. Evidence was found for Li{sup +} intercalation when a current pulse was set in a way so as to drive ions from the electrolyte into the ATO lattice. Galvanostatic intermittent titration was then applied to determine the lithium diffusion coefficient within the ATO lattice. The electrochemical density of states of the conducting oxide was studied by means of the transient voltage recorded during the chronopotentiometry experiments. These measurements were possible because, as Li{sup +} intercalation took place, charge compensating electrons filled the lowest part of the conduction band in ATO. Furthermore, the charge insertion modified the optical properties of ATO according to the Drude model.

  10. Reactive Sputter Deposition of WO3/Ag/WO3 Film for Indium Tin Oxide (ITO)-Free Electrochromic Devices.

    PubMed

    Yin, Yi; Lan, Changyong; Guo, Huayang; Li, Chun

    2016-02-17

    Functioning both as electrochromic (EC) and transparent-conductive (TC) coatings, WO3/Ag/WO3 (WAW) trilayer film shows promising potential application for ITO-free electrochromic devices. Reports on thermal-evaporated WAW films revealed that these bifunctional WAW films have distinct EC characteristics; however, their poor adhesive property leads to rapid degradation of coloring-bleaching cycling. Here, we show that WAW film with improved EC durability can be prepared by reactive sputtering using metal targets. We find that, by introducing an ultrathin tungsten (W) sacrificial layer before the deposition of external WO3, the oxidation of silver, which leads to film insulation and apparent optical haze, can be effectively avoided. We also find that the luminous transmittance and sheet resistance were sensitive to the thicknesses of tungsten and silver layers. The optimized structure for TC coating was obtained to be WO3 (45 nm)/Ag (10 nm)/W (2 nm)/WO3 (45 nm) with a sheet resistance of 16.3 Ω/□ and a luminous transmittance of 73.7%. Such film exhibits compelling EC performance with decent luminous transmittance modulation ΔTlum of 29.5%, fast switching time (6.6 s for coloring and 15.9 s for bleaching time), and long-term cycling stability (2000 cycles) with an applied potential of ±1.2 V. Thicker external WO3 layer (45/10/2/100 nm) leads to larger modulation with maximum ΔTlum of 46.4%, but at the cost of significantly increasing the sheet resistance. The strategy of introducing ultrathin metal sacrificial layer to avoid silver oxidation could be extended to fabricating other oxide-Ag-oxide transparent electrodes via low-cost reactive sputtering. PMID:26726834

  11. X-ray photoelectron spectroscopy study on the chemistry involved in tin oxide film growth during chemical vapor deposition processes

    SciTech Connect

    Mannie, Gilbere J. A.; Gerritsen, Gijsbert; Abbenhuis, Hendrikus C. L.; Deelen, Joop van; Niemantsverdriet, J. W.; Thuene, Peter C.

    2013-01-15

    The chemistry of atmospheric pressure chemical vapor deposition (APCVD) processes is believed to be complex, and detailed reports on reaction mechanisms are scarce. Here, the authors investigated the reaction mechanism of monobutyl tinchloride (MBTC) and water during SnO{sub 2} thin film growth using x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). XPS results indicate an acid-base hydrolysis reaction mechanism, which is tested with multilayer experiments, demonstrating self-terminating growth. In-house developed TEM wafers are used to visualize nucleation during these multilayer experiments, and results are compared with TEM results of APCVD samples. Results show almost identical nucleation behavior implying that their growth mechanism is identical. Our experiments suggest that in APCVD, when using MBTC and water, SnO{sub 2} film growth occurs via a heterolytic bond splitting of the Sn-Cl bonds without the need to invoke gas-phase radical or coordination chemistry of the MBTC precursor.

  12. Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition

    NASA Astrophysics Data System (ADS)

    Aldalbahi, Ali; Mkawi, E. M.; Ibrahim, K.; Farrukh, M. A.

    2016-09-01

    We report growth of quaternary Cu2 ZnSnS4 (CZTS) thin films prepared by the electrochemical deposition from salt precursors containing Cu (II), Zn (II) and Sn (IV) metals. The influence of different sulfurization times t (t = 75, 90, 105, and 120 min) on the structural, compositional, morphological, and optical properties, as well as on the electrical properties is studied. The films sulfurized 2 hours showed a prominent kesterite phase with a nearly stoichiometric composition. Samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and Raman and UV-VIS-NIR spectrometer at different stages of work. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. (FESEM) shows that compact and dense morphology and enhanced photo-sensitivity. STEM - EDS elemental map of CZTS cross-section confirms homogeneous distribution. From optical study, energy gap was enlarged with a changed sulfurization times in the range of 1.37–1.47 eV.

  13. Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition

    PubMed Central

    Aldalbahi, Ali; Mkawi, E. M.; Ibrahim, K.; Farrukh, M. A.

    2016-01-01

    We report growth of quaternary Cu2 ZnSnS4 (CZTS) thin films prepared by the electrochemical deposition from salt precursors containing Cu (II), Zn (II) and Sn (IV) metals. The influence of different sulfurization times t (t = 75, 90, 105, and 120 min) on the structural, compositional, morphological, and optical properties, as well as on the electrical properties is studied. The films sulfurized 2 hours showed a prominent kesterite phase with a nearly stoichiometric composition. Samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and Raman and UV-VIS-NIR spectrometer at different stages of work. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. (FESEM) shows that compact and dense morphology and enhanced photo-sensitivity. STEM - EDS elemental map of CZTS cross-section confirms homogeneous distribution. From optical study, energy gap was enlarged with a changed sulfurization times in the range of 1.37–1.47 eV. PMID:27600023

  14. Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition.

    PubMed

    Aldalbahi, Ali; Mkawi, E M; Ibrahim, K; Farrukh, M A

    2016-01-01

    We report growth of quaternary Cu2 ZnSnS4 (CZTS) thin films prepared by the electrochemical deposition from salt precursors containing Cu (II), Zn (II) and Sn (IV) metals. The influence of different sulfurization times t (t = 75, 90, 105, and 120 min) on the structural, compositional, morphological, and optical properties, as well as on the electrical properties is studied. The films sulfurized 2 hours showed a prominent kesterite phase with a nearly stoichiometric composition. Samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and Raman and UV-VIS-NIR spectrometer at different stages of work. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. (FESEM) shows that compact and dense morphology and enhanced photo-sensitivity. STEM - EDS elemental map of CZTS cross-section confirms homogeneous distribution. From optical study, energy gap was enlarged with a changed sulfurization times in the range of 1.37-1.47 eV. PMID:27600023

  15. Structural and physical properties of tin oxide thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Lin, Su-Shia; Tsai, Yung-Shiang; Bai, Kai-Ren

    2016-09-01

    Tin oxide films were deposited on glass substrates by RF magnetron sputtering. At a lower sputtering pressure, the tin oxide film comprised nanocrystalline orthorhombic SnO with a (110) orientation, greater p-type conductivity and better hydrophobicity. Increasing substrate temperature resulted in the coexistence of nanocrystalline orthorhombic SnO and tetragonal SnO2 in the deposited film, favoring hydrophilicity, changing the p-type conductivity to n-type conductivity, and reducing resistivity. As the sputtering pressure or substrate temperature increased, the tin oxide film exhibited a lower surface roughness, a larger optical energy gap, and higher optical transmission.

  16. Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition.

    PubMed

    Bitter, Sofie; Schlupp, Peter; Bonholzer, Michael; von Wenckstern, Holger; Grundmann, Marius

    2016-04-11

    Continuous composition spread (CCS) methods allow fast and economic exploration of composition dependent properties of multielement compounds. Here, a CCS method was applied for room temperature pulsed laser deposition (PLD) of amorphous zinc-tin-oxide to gain detailed insight into the influence of the zinc-to-tin cation ratio on optical and electrical properties of this ternary compound. Our CCS approach for a large-area offset PLD process utilizes a segmented target and thus makes target exchange or movable masks in the PLD chamber obsolete. Cation concentrations of 0.08-0.82 Zn/(Zn + Sn) were achieved across single 50 × 50 mm(2) glass substrates. The electrical conductivity increases for increasing tin content, and the absorption edge shifts to lower energies. The free carrier concentration can be tuned from 10(20) to 10(16) cm(-3) by variation of the cation ratio from 0.1 to 0.5 Zn/(Zn + Sn).

  17. Placer tin deposits in central Alaska

    USGS Publications Warehouse

    Chapman, Robert Mills; Coats, Robert Roy; Payne, Thomas G.

    1963-01-01

    Placer tin, in the form of cassiterite (Sn02) and (or) tinstone (fragments including cassiterite and some vein or rock material), is known or reported in deposits that have been prospected or mined for placer gold in four areas adjacent to the Yukon River in central Alaska, 120 to 240 miles west of Fairbanks. These areas are: the Morelock Creek area, on the north side of the Yukon River about 30 miles upstream from Tanana; the Moran Dome area, about 16 miles north of the Yukon River and 25 miles northwest of Tanana; the Mason Creek area, on the north side of the Yukon River about 36 miles west of Tanana; and the Ruby-Long area, on the south side of the Yukon River near Ruby and about 40 miles east of Galena. The only extensive placer mining in these areas has been in the Ruby-Long area. Other placer deposits including some cassiterite are known in central Alaska but are not discussed in this report. Bedrock in these areas is predominantly schist of various types with some associated greenstone and other metamorphic rocks. Some granite is exposed in the Moran Dome and Ruby-Long areas and in areas close to Morelock and Mason Creeks. Barren, milky quartz veins and veinlets transecting the metamorphic rocks are common. No cassiterite was found in the bedrock, and no bedrock source of the tin has been reported. In the Moran Dome and Mason Creek areas, and in part of the Ruby-Long area, tourmaline is present in the rocks of the tin-bearing drainage basins, and apparently absent elsewhere in these areas. The placer deposits are in both valley floor and bench alluvium, which are predominantly relatively thin, rarely exceeding a thickness of 30 feet. Most of the alluvium deposits are not perennially frozen. In the Morelock Creek area tin-bearing deposits are 5 to 5? miles above the mouth of the creek, and meager evidence indicates that cassiterite and gold are present in Morelock Creek valley and some of the tributaries both upstream and downstream from these deposits. The

  18. Frequency response of microwave dielectric Bi2(Zn1/3Nb2/3)2O7 thin films laser deposited on indium-tin oxide coated glass

    NASA Astrophysics Data System (ADS)

    Cheng, Hsiu-Fung; Chen, Yi-Chun; Lin, I.-Nan

    2000-01-01

    Bi2(Zn1/3Nb2/3)2O7 (BZN) thin films were prepared by using a pulsed laser deposition technique. For films in situ deposited on indium-tin oxide (ITO) coated glass substrates, the crystalline phase can be obtained by growing at a substrate temperature (Ts) higher than 475 °C. Too low a substrate temperature (Ts<400 °C) results in the amorphous phase, whereas too high a temperature (Ts>600 °C) leads to substantial interaction between the BZN film and the ITO layer. For the films deposited at a 500 °C substrate temperature, the texture characteristics change with their thickness. The films are (222) preferentially oriented when they are thin, and (400) preferentially oriented when they are thick. The optical properties, measured using optical spectroscopy, reveal that the index of refraction (n) and absorption coefficient (κ) vary between n=2.08-2.51 and κ=1.22×10-5-1.88×10-4 nm-1, respectively. These optical parameters do not change significantly with the preferred orientation and thickness of the films. However, the low frequency dielectric properties are closely correlated with the material's characteristics. The crystalline BZN films have a markedly larger dielectric constant than the amorphous films.

  19. Variable temperature semiconductor film deposition

    DOEpatents

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  20. Variable temperature semiconductor film deposition

    DOEpatents

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  1. Fabrication of TiN nanostructure as a hydrogen peroxide sensor by oblique angle deposition

    PubMed Central

    2014-01-01

    Nanostructured titanium nitride (TiN) films with varying porosity were prepared by the oblique angle deposition technique (OAD). The porosity of films increases as the deposition angle becomes larger. The film obtained at an incident angle of 85° exhibits the best catalytic activity and sensitivity to hydrogen peroxide (H2O2). This could be attributed to its largest contact area with the electrolyte. An effective approach is thus proposed to fabricate TiN nanostructure as H2O2 sensor by OAD. PMID:24589278

  2. Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition.

    PubMed

    Bitter, Sofie; Schlupp, Peter; Bonholzer, Michael; von Wenckstern, Holger; Grundmann, Marius

    2016-04-11

    Continuous composition spread (CCS) methods allow fast and economic exploration of composition dependent properties of multielement compounds. Here, a CCS method was applied for room temperature pulsed laser deposition (PLD) of amorphous zinc-tin-oxide to gain detailed insight into the influence of the zinc-to-tin cation ratio on optical and electrical properties of this ternary compound. Our CCS approach for a large-area offset PLD process utilizes a segmented target and thus makes target exchange or movable masks in the PLD chamber obsolete. Cation concentrations of 0.08-0.82 Zn/(Zn + Sn) were achieved across single 50 × 50 mm(2) glass substrates. The electrical conductivity increases for increasing tin content, and the absorption edge shifts to lower energies. The free carrier concentration can be tuned from 10(20) to 10(16) cm(-3) by variation of the cation ratio from 0.1 to 0.5 Zn/(Zn + Sn). PMID:27004935

  3. Investigation of electroless tin deposition from acidic thiourea-type bath

    NASA Astrophysics Data System (ADS)

    Araźna, A.; Bieliński, J.

    2006-10-01

    The constant tendency of miniaturization in electronic products and developments in surface assembly techniques creates requirement to prepare new techniques and processes also in the range of metallic coatings. An additional factor which influences the evolution of preservatives coatings technology is the necessity to adapt Polish law to European directive. From 1 st July 2006 there will be an obligatory RoHS directive banning applying lead in electronics. Electroless tin deposition is one of an alternative for Sn/Pb lead free preservative films on copper surface in PCB technology. Electroless deposition of tin coatings on copper can be made in two ways: from an alkaline bath - the process disproportionation of Sn(II) compounds and from acidic bath contain complex compound such as thiourea - the displacement of copper by tin in Sn(II). Alkaline baths are not used in printed circuit board technology because it has destructive influence on resists. Besides acidic baths complex compounds contain additional stability solution composition which modify structure of obtained tin film. Quality and thickness tin layer are fundamental parameters which determine its protective character. The research test were done in thiourea-type electroless tin bath. The influence of different parameters on n rate of tin deposition and thickness of Sn coating were determined: temperature of the bath, Sn(II)-salt, thiourea and HCl concentration. Tin layers were depositioned on electrolytical copper foil. The thickness of Sn coating was determined by coulometry in 2M HCl. The rate deposition process depends mainly on the thiourea and HCl concentrations in solution. The temperature is also a very important parameter. The thickness of tin layer grows when the temperature increase. Although above 70°C appear undesirable thiourea decomposition. The results of the investigation show that further investigations are necessary for this solution.

  4. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    NASA Astrophysics Data System (ADS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn3O4, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20-30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 - 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9-10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  5. Spray deposited copper zinc tin sulphide (Cu2ZnSnS4) film as a counter electrode in dye sensitized solar cells.

    PubMed

    Swami, Sanjay Kumar; Chaturvedi, Neha; Kumar, Anuj; Chander, Nikhil; Dutta, Viresh; Kumar, D Kishore; Ivaturi, A; Senthilarasu, S; Upadhyaya, Hari M

    2014-11-21

    Stoichiometric thin films of Cu2ZnSnS4 (CZTS) were deposited by the spray technique on a FTO coated glass substrate, with post-annealing in a H2S environment to improve the film properties. CZTS films were used as a counter electrode (CE) in Dye-Sensitized Solar Cells (DSCs) with N719 dye and an iodine electrolyte. The DSC of 0.25 cm(2) area using a CE of CZTS film annealed in a H2S environment under AM 1.5G illumination (100 mW cm(-2)) exhibited a short circuit current density (JSC) = 18.63 mA cm(-2), an open circuit voltage (VOC) = 0.65 V and a fill factor (FF) = 0.53, resulting in an overall power conversion efficiency (PCE) = 6.4%. While the DSC using as deposited CZTS film as a CE showed the PCE = 3.7% with JSC = 13.38 mA cm(-2), VOC = 0.57 V and FF = 0.48. Thus, the spray deposited CZTS films can play an important role as a CE in the large area DSC fabrication. PMID:25286339

  6. Growth and characterization of antimony doped tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Shanthi, S.; Subramanian, C.; Ramasamy, P.

    1999-03-01

    Pure and antimony doped tin oxide thin films were deposited on glass and quartz plates by spray pyrolysis method. Structural, electrical and optical properties of these films were studied by varying the substrate temperature and antimony concentration. The best electro-optic properties obtained were, resistivity as low as 9×10 -4 Ω cm and average transmission of 80% in the visible region, at the substrate temperature of 400°C with the antimony concentration of 9 at%. While doping, change in preferred orientation was observed from [1 1 0] to [2 0 0]. The optical investigation showed that, depending upon the doping concentration, the antimony doped films had direct allowed transitions in the range 4.13-4.22 eV and indirect allowed transitions in the range 2.54-2.65 eV.

  7. A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System.

    PubMed

    Steinmann, Vera; Chakraborty, Rupak; Rekemeyer, Paul H; Hartman, Katy; Brandt, Riley E; Polizzotti, Alex; Yang, Chuanxi; Moriarty, Tom; Gradečak, Silvija; Gordon, Roy G; Buonassisi, Tonio

    2016-08-31

    As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to reproducibly test promising candidates for high-performing PV devices. Many early-stage devices are prone to device shunting due to pinholes in the absorber layer, producing "false-negative" results. Here, we demonstrate a device engineering solution toward a robust device architecture, using a two-step absorber deposition approach. We use tin sulfide (SnS) as a test absorber material. The SnS bulk is processed at high temperature (400 °C) to stimulate grain growth, followed by a much thinner, low-temperature (200 °C) absorber deposition. At a lower process temperature, the thin absorber overlayer contains significantly smaller, densely packed grains, which are likely to provide a continuous coating and fill pinholes in the underlying absorber bulk. We compare this two-step approach to the more standard approach of using a semi-insulating buffer layer directly on top of the annealed absorber bulk, and we demonstrate a more than 3.5× superior shunt resistance Rsh with smaller standard error σRsh. Electron-beam-induced current (EBIC) measurements indicate a lower density of pinholes in the SnS absorber bulk when using the two-step absorber deposition approach. We correlate those findings to improvements in the device performance and device performance reproducibility.

  8. A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System.

    PubMed

    Steinmann, Vera; Chakraborty, Rupak; Rekemeyer, Paul H; Hartman, Katy; Brandt, Riley E; Polizzotti, Alex; Yang, Chuanxi; Moriarty, Tom; Gradečak, Silvija; Gordon, Roy G; Buonassisi, Tonio

    2016-08-31

    As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to reproducibly test promising candidates for high-performing PV devices. Many early-stage devices are prone to device shunting due to pinholes in the absorber layer, producing "false-negative" results. Here, we demonstrate a device engineering solution toward a robust device architecture, using a two-step absorber deposition approach. We use tin sulfide (SnS) as a test absorber material. The SnS bulk is processed at high temperature (400 °C) to stimulate grain growth, followed by a much thinner, low-temperature (200 °C) absorber deposition. At a lower process temperature, the thin absorber overlayer contains significantly smaller, densely packed grains, which are likely to provide a continuous coating and fill pinholes in the underlying absorber bulk. We compare this two-step approach to the more standard approach of using a semi-insulating buffer layer directly on top of the annealed absorber bulk, and we demonstrate a more than 3.5× superior shunt resistance Rsh with smaller standard error σRsh. Electron-beam-induced current (EBIC) measurements indicate a lower density of pinholes in the SnS absorber bulk when using the two-step absorber deposition approach. We correlate those findings to improvements in the device performance and device performance reproducibility. PMID:27494110

  9. Amorphous tin-cadmium oxide films and the production thereof

    SciTech Connect

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  10. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4 nm in size) in the amorphous matrix of Si{sub 1−x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1−x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ∼80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  11. Strain and Cohesive Energy of TiN Deposit on Al(001) Surface: Density Functional Calculation

    NASA Astrophysics Data System (ADS)

    Ren, Yuan; Liu, Xuejie

    2016-07-01

    To apply the high hardness of TiN film to soft and hard multilayer composite sheets, we constructed a new type of composite structural material with ultra-high strength. The strain of crystal and cohesive energy between the atoms in the eight structures of N atom, Ti atom, 2N2Ti island and TiN rock salt deposited on the Al(001) surface were calculated with the first-principle ultra-soft pseudopotential approach of the plane wave based on the density functional theory. The calculations of the cohesive energy showed that N atoms could be deposited in the face-centered-cubic vacancy position of the Al(001) surface and results in a cubic structure AlN surface. The TiN film could be deposited on the interface of β-AlN. The calculations of the strains showed that the strain in the TiN film deposited on the Al(001) surface was less than that in the 2N2Ti island deposited on the Al(001) surface. The diffusion behavior of interface atom N was investigated by a nudged elastic band method. Diffusion energy calculation showed that the N atom hardly diffused to the substrate Al layer.

  12. Conduction and electric field effect in ultra-thin TiN films

    NASA Astrophysics Data System (ADS)

    Van Bui, Hao; Kovalgin, Alexey Y.; Schmitz, Jurriaan; Wolters, Rob A. M.

    2013-07-01

    Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.

  13. Ethylene Glycol Assisted Synthesis of Fluorine Doped Tin Oxide Nanorods Using Improved Spray Pyrolysis Deposition Method

    NASA Astrophysics Data System (ADS)

    Liyanage, Devinda; Mudiyanselage Navaratne Bandara, Herath; Jayaweera, Viraj; Murakami, Kenji

    2013-08-01

    Fluorine-doped tin oxide nanorod transparent thin films were fabricated with SnCl4·5H2O, NH4F, and ethylene glycol (EG) using an improved spray pyrolysis deposition technique. The fabricated nanorods showed a low resistance of 15.3 Ω/sq and a good transparency of 70.8%. The nanorods have a higher surface area than the conventionally used thin films.

  14. Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing

    SciTech Connect

    Li, Liuan; Kishi, Akinori; Shiraishi, Takayuki; Jiang, Ying; Wang, Qingpeng; Ao, Jin-Ping

    2014-03-15

    This study evaluates the thermal stability of different refractory metal nitrides used as Schottky electrodes on GaN. The results demonstrate that TiN, MoSiN, and MoN possess good rectification and adhesion strength, with barrier heights of 0.56, 0.54, and 0.36 eV, respectively. After thermal treatment at 850 °C for 1 min, the TiN and MoN electrodes still exhibit rectifying characteristics, while the MoSiN degrades to an ohmic-like contact. For further study, several TiN films are deposited using different N{sub 2}/Ar reactive/inert sputtering gas ratios, thereby varying the nitrogen content present in the sputtering gas. Ohmic-like contact is observed with the pure Ti contact film, and Schottky characteristics are observed with the samples possessing nitrogen in the film. The average Schottky barrier height is about 0.5 eV and remains virtually constant with varying nitrogen deposition content. After examining Raman spectra and x-ray photoelectron spectroscopy results, the increase in the film resistivity after thermal treatment is attributed to oxidation and/or nitridation. Films deposited with a medium (40% and 60%) nitrogen content show the best film quality and thermal stability.

  15. Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone

    SciTech Connect

    Kannan Selvaraj, Sathees; Feinerman, Alan; Takoudis, Christos G.

    2014-01-15

    In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1 ± 0.01 nm/cycle within the wide ALD temperature window of 175–300 °C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure, refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}–Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3 Ω cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.

  16. Room temperature ferromagnetism in Mn- and Fe-doped indium tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Venkatesan, M.; Gunning, R. D.; Stamenov, P.; Coey, J. M. D.

    2008-04-01

    Undoped and transition-metal doped indium tin oxide films have been grown by pulsed laser deposition technique, on single crystalline c-plane (0001) and r-plane (1102) sapphire substrates maintained at 500-850°C. Magnetization measurements of films deposited at different temperatures indicate that ferromagnetism appears for deposition temperatures, Tdep>600°C, with the highest moment for films deposited around 750°C. Qualitative different ferromagnetic behavior has been observed at room temperature in Fe- and Mn-doped thin films. The stable, hysteretic ferromagnetism of the Fe-doped films is due to the presence of magnetite, as seen in transmission Mössbauer spectra. The Mn-doped films show anhysteretic ferromagnetism which decays over time. It is somehow intrinsic, but not due to the Mn ions, which remains paramagnetic down to 4K. No anomalous Hall effect is observed.

  17. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    SciTech Connect

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  18. The formation of tin oxides in thin-film Sn/C/KCl(100) structures

    SciTech Connect

    Yurakov, Yu. A. Ryabtsev, S. V.; Chuvenkova, O. A.; Domashevskaya, E. P.; Nikitenko, A. S.; Kannykin, S. V.; Kushchev, S. B.

    2009-01-15

    The formation of oxides upon the thermal annealing (both in air and vacuum) of island tin films grown on a KCl(100) substrate, which was coated by a thin layer of amorphous carbon, has been investigated by transmission electron microscopy. It is established that thermal annealing at temperatures below the tin melting point (T{sub m}) does not lead to phase transitions with the formation of new crystalline oxide phases. At the same time, the films undergo structural changes: the average size of blocks in the substrate plane decreases compared to those in an as-deposited film. Thermal annealing in air at temperatures above the tin melting point leads to the formation of multiphase oxide structures and increases the average size of blocks and islands in the substrate plane. It is shown that preliminary thermal annealing in air at temperatures below T{sub m} hinders oxidation upon subsequent heat treatment.

  19. A Study of Optical Parameters of Tin Sulphide Thin Films Using the Swanepoel Method

    NASA Astrophysics Data System (ADS)

    Ragina, A. J.; Murali, K. V.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2011-10-01

    The knowledge of the optical parameters of thin films is important for optics and optoelectronics. In the present work, tin sulphide thin films were deposited on glass substrates by chemical bath deposition method. The as grown films were brown in color and highly adherent to the substrate. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy and spectrophotometric measurements. XRD patterns showed that the films developed were orthorhombic structure. SEM images of tin sulphide thin films confirmed the formation of nanowires. Absorption spectra revealed medium absorption in the visible region and a gradual decrease with higher wavelength. The transmittance of the as-synthesized films is about 50% in the wavelength range 600-1000 nm. The methodological framework of the Swanepoel's method for the spectrophotometric determination of optical parameters of tin sulphide thin films using transmittance data was discussed. The Swanepoel's method is found to be applicable for thin films when measured transmittance spectra have at least one minimum and one maximum. By analyzing the transmission curve, the refractive index and the thickness of the film were evaluated. The energy band gaps are also reported. The optical band gap is direct with a value of 1.79 eV. The values of the optical band gap energy and thickness of the film calculated by Swanepoel's method were compared with that obtained from absorption spectra and cross sectional SEM photographs respectively. These properties demonstrated that tin sulphide thin films could be used as an absorber layer in the fabrication of heterojunction solar cells.

  20. Relationship between microstructure and electronic properties of energetically deposited zinc tin oxide

    NASA Astrophysics Data System (ADS)

    Murdoch, Billy James; McCulloch, Dougal G.; Partridge, James G.

    2016-06-01

    Thin films of amorphous n-type zinc tin oxide have been energetically deposited from a filtered cathodic vacuum arc at moderate temperatures. The characteristics of these films span a range suitable for semiconductor devices and transparent conducting oxide interconnects with carrier concentration and mobility dependent on local bonding. X-ray photoelectron spectroscopy (XPS) and electron diffraction have revealed that acceptor-like Sn(II) bonding in the films decreased with increasing growth temperature, resulting in higher n-type carrier concentrations. XPS and in situ Ar plasma treatment showed that downward surface band bending resulted from OH attachment. Persistent photoconductivity was attributed to the photoionization of oxygen vacancies.

  1. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    SciTech Connect

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  2. Aspects of nitrogen surface chemistry relevant to TiN chemical vapor deposition

    SciTech Connect

    Schulberg, M.T.; Allendorf, M.D.; Outka, D.A.

    1996-08-01

    NH{sub 3} is an important component of many chemical vapor deposition (CVD) processes for TiN films, which are used for diffusion barriers and other applications in microelectronic circuits. In this study, the interaction of NH{sub 3} with TiN surfaces is examined with temperature programmed desorption (TPD) and Auger electron spectroscopy. NH{sub 3} has two adsorption states on TiN: a chemisorbed state and a multilayer state. A new method for analyzing TPD spectra in systems with slow pumping speeds yields activation energies for desorption for the two states of 24 kcal/mol and 7.3 kcal/mol, respectively. The sticking probability into the chemisorption state is {approximately}0.06. These results are discussed in the context of TiN CVD. In addition, the high temperature stability of TiN is investigated. TiN decomposes to its elements only after heating to 1300 K, showing that decomposition is unlikely to occur under CVD conditions.

  3. Biomimetic thin film deposition

    SciTech Connect

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  4. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method.

    PubMed

    Nagirnyak, Svitlana V; Lutz, Victoriya A; Dontsova, Tatiana A; Astrelin, Igor M

    2016-12-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated. PMID:27456501

  5. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method

    NASA Astrophysics Data System (ADS)

    Nagirnyak, Svitlana V.; Lutz, Victoriya A.; Dontsova, Tatiana A.; Astrelin, Igor M.

    2016-07-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated.

  6. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method.

    PubMed

    Nagirnyak, Svitlana V; Lutz, Victoriya A; Dontsova, Tatiana A; Astrelin, Igor M

    2016-12-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated.

  7. Optical properties of TiN thin films close to the superconductor-insulator transition.

    SciTech Connect

    Pfuner, F.; Degiorgi, L.; Baturina, T. I.; Vinokur, V. M.; Baklanov, M. R.; Materials Science Division; ETH Zurich; Inst. Semiconductor Physics; IMEC Kapeldreef

    2009-11-10

    We present the intrinsic optical properties over a broad spectral range of TiN thin films deposited on an Si/SiO{sub 2} substrate. We analyze the measured reflectivity spectra of the film-substrate multilayer structure within a well-establish procedure based on the Fresnel equation and extract the real part of the optical conductivity of TiN. We identify the metallic contribution as well as the finite energy excitations and disentangle the spectral weight distribution among them. The absorption spectrum of TiN bears some similarities with the electrodynamic response observed in the normal state of the high-temperature superconductors. Particularly, a mid-infrared feature in the optical conductivity is quite reminiscent of a pseudogap-like excitation.

  8. The influence of the effective physical properties of tin electrodeposited films on the growth of tin whiskers

    NASA Astrophysics Data System (ADS)

    Pedigo, Aaron E.

    The purpose of the present study was to characterize and calculate the effective film properties of electrodeposited tin films to determine factors influencing the growth of tin (Sn) whiskers. The growth of Sn whiskers represents an increased risk to the reliability of electronic devices, and is a particular concern in the high reliability environments demanded in aerospace and defense applications. Efforts to prevent whisker growth have proven difficult, in part, due to the lack of understanding concerning the fundamental mechanisms responsible for whisker growth. In the present study, Sn, Sn-Cu, and Sn Cu Pb films were electrodeposited from commercial electrolytes with different deposition parameters. The morphology of Sn hillocks and whiskers were characterized leading to a growth model considering the role of grain boundary mobility. Crystallographic texture measurements revealed non-random textures, dependent on electrolyte type, electrolyte additives, deposition current density, and film thickness. The crystallographic texture was also found to evolve with time, indicating recrystallization and grain growth. The corresponding textures were used to calculate the effective physical properties of the films, showing significant differences in the linear modulus of elasticity, biaxial modulus of elasticity, and coefficient of thermal expansion. The influence of these effective properties on the strain energy density of the film was analyzed with respect to the evolution of crystallographic texture and film stress. The results show that the reduction of strain energy and surface energy is not the only driving force dictating the evolution of the crystallographic texture. Recommendations are made for future studies to apply the analysis tools developed in this study for future whisker research, as well as for industrial applications.

  9. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

    PubMed Central

    2012-01-01

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system. PMID:22221518

  10. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    SciTech Connect

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W.

    2006-11-01

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are

  11. Tailoring of absorption edge by thermal annealing in tin oxide thin films

    SciTech Connect

    Thakur, Anup; Gautam, Sanjeev; Kumar, Virender; Chae, K. H.; Lee, Ik-Jae; Shin, Hyun Joon

    2015-05-15

    Tin oxide (SnO{sub 2}) thin films were deposited by radio-frequency (RF) magnetron sputtering on silicon and glass substrates in different oxygen-to-argon gas-flow ratio (O{sub 2}-to-Ar = 0%, 10%, 50%). All films were deposited at room temperature and fixed working pressures, 10 mTorr. The X-ray diffraction (XRD) measurement suggests that all films were crystalline in nature except film deposited in argon environment. Thin films were annealed in air at 200 °C, 400 °C and 600 °C for two hours. All films were highly transparent except the film deposited only in the argon environment. It was also observed that transparency was improved with annealing due to decrease in oxygen vacancies. Atomic force microscopy (AFM), results showed that the surface of all the films were highly flat and smooth. Blue shift was observed in the absorption edge with annealing temperature. It was also observed that there was not big change in the absorption edge with annealing for films deposited in 10% and 50% oxygen-to-argon gas-flow ratio.

  12. Study of indium tin oxide films exposed to atomic axygen

    NASA Technical Reports Server (NTRS)

    Snyder, Paul G.; De, Bhola N.; Woollam, John A.; Coutts, T. J.; Li, X.

    1989-01-01

    A qualitative simulation of the effects of atomic oxygen has been conducted on indium tin oxide (ITO) films prepared by dc sputtering onto room-temperature substrates, by exposing them to an RF-excited oxygen plasma and characterizing the resulting changes in optical, electrical, and structural properties as functions of exposure time with ellipsometry, spectrophotometry, resistivity, and X-ray measurements. While the films thus exposed exhibit reduced resistivity and optical transmission; both of these effects, as well as partial crystallization of the films, may be due to sample heating by the plasma. Film resistivity is found to stabilize after a period of exposure.

  13. Comparison of characteristics of fluorine doped zinc and gallium tin oxide composite thin films deposited on stainless steel 316 bipolar plate by electron cyclotron resonance-metal organic chemical vapor deposition for proton exchange membrane fuel cells.

    PubMed

    Park, Jihun; Hudaya, Chairul; Lee, Joong Kee

    2011-09-01

    In order to replace the brittle graphite bipolar plates currently used for the PEMFC stack, coated SUS 316 was employed. As a metallic bipolar plate, coated SUS 316 can provide higher mechanical strength, better durability to shocks and vibration, less permeability, improved thermal and bulk electrical conductivity, as well as being thinner and lighter. To enhance the interfacial contact resistance and corrosion resistance of SUS 316, the deposition of GTO:F and ZTO:F composite films was carried out by ECR-MOCVD. The surface morphology of the films consisted of tiny elliptically shaped grains with a thickness of 1 microm. The corrosion current for GTO:F was 0.13 Acm(-2) which was much lower than that of bare SUS 316 (50.16 Acm(-2)). The GTO:F coated film had the smallest corrosion current due to the formation of a tight surface morphology with very few pin-holes. The GTO:F coated film exhibited the highest cell voltage and power density due to its lower ICR values. PMID:22097519

  14. Antimony-Doped Tin Oxide Thin Films Grown by Home Made Spray Pyrolysis Technique

    NASA Astrophysics Data System (ADS)

    Yusuf, Gbadebo; Babatola, Babatunde Keji; Ishola, Abdulahi Dimeji; Awodugba, Ayodeji O.; Solar cell Collaboration

    2016-03-01

    Transparent conducting antimony-doped tin oxide (ATO) films have been deposited on glass substrates by home made spray pyrolysis technique. The structural, electrical and optical properties of the ATO films have been investigated as a function of Sb-doping level and annealing temperature. The optimum target composition for high conductivity and low resistivity was found to be 20 wt. % SnSb2 + 90 wt. ATO. Under optimized deposition conditions of 450oC annealing temperature, electrical resistivity of 5.2×10-4 Ω -cm, sheet resistance of 16.4 Ω/sq, average optical transmittance of 86% in the visible range, and average optical band-gap of 3.34eV were obtained. The film deposited at lower annealing temperature shows a relatively rough, loosely bound slightly porous surface morphology while the film deposited at higher annealing temperature shows uniformly distributed grains of greater size. Keywords: Annealing, Doping, Homemade spray pyrolysis, Tin oxide, Resistivity

  15. SnS2 Thin Film Deposition by Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Yahia Jaber, Abdallah; Noaiman Alamri, Saleh; Salah Aida, Mohammed

    2012-06-01

    Tin disulfide (SnS2) thin films have been synthesized using a simplified spray pyrolysis technique using a perfume atomizer. The films were deposited using two different solutions prepared by the dilution of SnCl2 and thiourea in distilled water and in methanol. The obtained films have a microcrystalline structure. The film deposited using methanol as the solvent is nearly stochiometric SnS2 with a spinel phase having a (001) preferential orientation. The film prepared with an aqueous solution is Sn-rich. Scanning electronic microscopy (SEM) images reveal that the film deposited with the aqueous solution is rough and is formed with large wires. However, the film deposited with methanol is dense and smooth. Conductivity measurements indicate that the aqueous solution leads to an n-type semiconductor, while methanol leads to a p-type semiconductor.

  16. Tin diselenide quantum-sized island films

    NASA Astrophysics Data System (ADS)

    Kushkhov, A. R.; Gaev, D. S.; Rabinovich, O. I.; Stolyarov, A. G.

    2012-03-01

    Island films based on the intermediate phases forming in Ge-Se and Sn-Se systems are prepared by the incongruent evaporation of film structures of a Sn1 - x Se x composition. The surface morphology of these structures is studied by atomic force microscopy (AFM). The effect of growth conditions on the size distribution of islands is established.

  17. Novel mechanism for high speed growth of transparent and conducting tin oxide thin films by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Kameswara Rao, L.; Vinni, V.

    1993-08-01

    A novel mechanism is proposed for efficient manipulation of transport forces acting on the droplets during spray pyrolytic deposition of thin films. A ``burst mode'' technique of spraying is used to adjust the deposition conditions so as to transport the droplets under the new mechanism. Transparent, conducting thin films of undoped tin oxide prepared by this method showed significant improvement in growth rate. The films are found to be of fairly good quality with optical transmission of 82% and sheet resistance of 35 Ω/⧠. The films are chemically homogeneous and grow preferentially along <200> direction.

  18. Electrically conducting polyimide film containing tin complexes

    NASA Technical Reports Server (NTRS)

    St. Clair, Anne K. (Inventor); Ezzell, Stephen A. (Inventor); Taylor, Larry T. (Inventor); Boston, Harold G. (Inventor)

    1996-01-01

    Disclosed is a thermally-stable SnO.sub.2 -surfaced polyimide film wherein the electrical conductivity of the SnO.sub.2 surface is within the range of about 3.0.times.10.sup.-3 to about 1.times.10.sup.-2 ohms.sup.-1,. Also disclosed is a method of preparing this film from a solution containing a polyamic acid and SnCl.sub.4 (DMSO).sub.2.

  19. Nano-crystalline porous tin oxide film for carbon monoxide sensing

    NASA Technical Reports Server (NTRS)

    Liu, Chung-Chiun (Inventor); Savinell, Robert F. (Inventor); Jin, Zhihong (Inventor)

    2000-01-01

    A tin oxide sol is deposited on platinum electrodes (12) of a sensor (10). The sol is calcined at a temperature of 500 to 800.degree. C. to produce a thin film of tin oxide with a thickness of about 150 nm to 2 .mu. and having a nano-crystalline structure with good stability. The sensor rapidly detects reducing gases, such as carbon monoxide, or hydrocarbons and organic vapors. Sensors using films calcined at around 700.degree. C. have high carbon monoxide selectivity with a response time of around 4 minutes and a recovery time of 1 minute, and therefore provide good detection systems for detection of trace amounts of pollutants such as toxic and flammable gases in homes, industrial settings, and hospitals.

  20. Investigation of tungsten doped tin oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Yang, Jianwen; Meng, Ting; Yang, Zhao; Cui, Can; Zhang, Qun

    2015-11-01

    Tungsten doped tin oxide thin film transistors (TWO-TFTs) were fabricated by radio frequency magnetron sputtering. With TWO thin films as the channel layers, the TFTs show lower off-current and positive shift turn-on voltage than the intrinsic tin oxide TFTs, which can be explained by the reason that W doping is conducive to suppress the carrier concentration of the TWO channel layer. It is important to elect an appropriate channel thickness for improving the TFT performance. The optimum TFT performance in enhancement mode is achieved at W doping content of 2.7 at% and channel thickness of 12 nm, with the saturation mobility, turn-on voltage, subthreshold swing value and on-off current ratio of 5 cm2 V-1 s-1, 0.4 V, 0.4 V/decade and 2.4  ×  106, respectively.

  1. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

    SciTech Connect

    Chiang, H.Q.; Wager, J.F.; Hoffman, R.L.; Jeong, J.; Keszler, D.A.

    2005-01-03

    Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5-15 and 20-50 cm{sup 2} V{sup -1} s{sup -1} are obtained for devices post-deposition annealed at 300 and 600 deg. C, respectively. TTFTs processed at 300 and 600 deg. C yield devices with turn-on voltage of 0-15 and -5-5 V, respectively. Under both processing conditions, a drain current on-to-off ratio greater than 10{sup 7} is obtained. Zinc tin oxide is one example of a new class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with (n-1)d{sup 10} ns{sup 0} (n{>=}4) electronic configurations.

  2. Genesis of the Silsilah tin deposit, Kingdom of Saudi Arabia

    USGS Publications Warehouse

    Kamilli, Robert J.; Criss, R.E.

    1996-01-01

    The Silsilah tin deposit (lat 25 degrees 06' N, long 42 degrees 40' E) consists of a group of pervasively greisenized, flat-topped granite cupolas within a 12-km-diam ring complex. The greisens contain varying amounts of disseminated cassiterite and wolframite. Several types of quartz veins are peripheral to the greisens; some of these contain minor wolframite. The deposit is genetically associated with a highly differentiated, peraluminous alkali-feldspar granite (587 + or - 8 Ma) that is part of a mostly peralkaline, igneous ring complex intruded into Late Proterozoic, immature sandstones of the Murdama Group. We recognize four distinct phases of the peraluminous granite. Only the smallest, most highly differentiated cupolas contain significant tin greisen mineralization. Greisens developed beneath aplitic carapaces that overlie the granite and created impermeable barriers to rising volatiles. The geometry of a cupola correlates strongly with the intensity of alteration; cupolas with the smallest cross sectional areas and steepest marginal contacts have the most intensely greisenized apexes. The paragenetic sequence can be divided into five stages: pegmatite formation, locally pervasive albitization, locally pervasive greisenization and deposition of cassiterite, deposition of quartz-wolframite veins, and deposition of quartz veins with minor base metal sulfides. Pressure-corrected fluid inclusion filling temperatures indicate that the hydrothermal system generally cooled as it evolved and that the delta 18O values of the hydrothermal quartz increased from 10.8 to 15.7 per mil. Calculated delta 18O values of the hydrothermal fluid varied concomitantly from the pegmatite stage (delta 18O fluid approximately 8.6ppm; T [asymp] 550 degrees C) to the greisen stage (5.4 and 5.6[ppm; T [asymp] 360 degrees C), the quartz-wolframite vein stage (6.3 and 7.5ppm; T [asymp] 390 degrees C), and the late vein stage (4.0 and 5.1ppm; T [asymp] 270 degrees C). This evolution

  3. Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

    NASA Astrophysics Data System (ADS)

    Ravichandran, K.; Muruganantham, G.; Sakthivel, B.

    2009-11-01

    Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO 2:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl 2 precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08×10 14 lines/m 2) when compared with that of the undoped film (13.2×10 14 lines/m 2), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 Ω/□) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl 2 precursor (without using methanol or ethanol).

  4. Fast Responsive Gas Sensor of Vertically Aligned Fluorine-Doped Tin Oxide Nanorod Thin Film

    NASA Astrophysics Data System (ADS)

    Cho, Chan-Woo; Lee, Jong-Heun; Riu, Doh-Hyung; Kim, Chang-Yeoul

    2012-04-01

    We prepared fluorine-doped tin oxide (FTO) nanorod films and a conventional FTO thin film for the application of a semiconducting gas sensor by spray pyrolysis method. The lengths of FTO nanorods (FTON, 100 and 500 nm) were controlled by changing deposition times, and FTO thin film (FTOT) was also prepared as a reference. The gas sensitivity test shows FTON with long nanorods had higher sensitivity for both hydrogen and ethanol gases but slow response and recovery times, despite an advantage of the higher gas sensitivity. FTO nanorod film with short length about 100 nm showed relatively lower sensitivity, but fast gas response and recovery characteristics. The fast response and recovery for the analyte gases are attributed to the conductance of FTO nanorods, which is closely related to the diameter and length of nanorods.

  5. Characterization of indium tin oxide films by RF-assisted DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Houng, Boen; Wang, Adam

    2012-05-01

    A unique design of RF (radio frequency) assisted DC (direct current) sputter was employed to deposit ITO (indium tin oxide) films on PET (polyethylene terephtalate) substrate. Effects of different RF portions of total power and oxygen gas flow on the properties of the films were investigated. It was found that the films became denser as the applied RF portion of the total power increased. This is due to higher momentum energy transfer by impinging ions increasing adatom diffusion on the films. Thus, a larger grained and less porous microstructure was presented in the films deposited at higher RF portions of the total power. However, a rougher surface morphology and minor crystallization was also found in the films prepared at 100% RF power. By wisely adjusting to a 50% RF portion of the total power, the electrical resistivity can reach a minimum value of 5.4 × 10-4 Ω cm associated with the carrier concentration of 7.0 × 1020 cm-3 and mobility of 17.4 cm2 V-1 s-1, respectively. In addition, the oxygen gas concentration in the sputtering chamber was found to play a key role in determining the quality of the films. As oxygen gas flowed at 2 sccm, the electrical resistivity was decreased to 3.9 × 10-4 Ω cm at a 50% RF portion of the total power. The electrical conduction mechanism, based on the grain boundary scattering, was correlated to the microstructure of the films in terms of grain size.

  6. Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

    DOEpatents

    Teeter, Glenn; Du, Hui; Young, Matthew

    2013-08-06

    A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

  7. TiN Deposition and Process Diagnostics using Remote Plasma Sputtering

    NASA Astrophysics Data System (ADS)

    Yang, Wonkyun; Kim, Gi-Taek; Lee, Seunghun; Kim, Do-Geun; Kim, Jong-Kuk

    2013-08-01

    The discharge voltage-current characteristics and the optical diagnostics of a remote plasma sputtering system called by high density plasma assisted sputtering source (HiPASS) were investigated. The remote plasma was generated by the hollow cathode discharge (HCD) gun and was transported to the target surface by external electromagnet coils. This showed a wide process window because the sputtering voltage and current could be individually controlled. The ion density and energy distribution could be also controlled unlike the conventional magnetron sputtering. Titanium nitride films were deposited under different sputtering voltage. The high voltage mode induced the high ionization ratio of the sputtered atoms and the high ion energy toward the substrate. That resulted in the enlarged grain size, and the preferred orientation toward (220). Eventually, this optimized condition of HiPASS obtained the best hardness of TiN films to be about 48 GPa at the sputtering voltage of -800 V.

  8. Device performances of organic light-emitting diodes with indium tin oxide, gallium zinc oxide, and indium zinc tin oxide anodes deposited at room temperature.

    PubMed

    Lee, Changhun; Ko, Yoonduk; Kim, Youngsung

    2013-12-01

    Thin films of Indium tin oxide (ITO), Gallium zinc oxide (GZO), and Indium zinc tin oxide (IZTO) were deposited on glass substrates by pulsed direct current magnetron sputtering at room temperature. The structural, optical, and electrical properties of the films were investigated towards evaluating their applications as flexible anodes. IZTO films exhibited the lowest resistivity (6.3 x 10(-4) Omega cm). Organic light-emitting diodes (OLEDs) were fabricated using the ITO, GZO, and IZTO films as anode layers. The turn-on voltages at a current density of 4.5 mA/cm2, 5.5 mA/cm2, 6.5 mA/cm2 were 5.5 V, 13.7 V, and 4.7 V for the devices with ITO, GZO, and IZTO anodes, respectively. The best performance was observed with the IZTO film, indicating its suitability as an alternative material for conventional ITO anodes used in OLEDs and flexible displays. PMID:24266182

  9. Effect of solvent ratio on the optoelectronic properties of fluorine doped tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Karthick, P.; Divya, V.; Sridharan, M.; Jeyadheepan, K.

    2015-06-01

    Fluorine doped tin oxide (FTO) thin films were deposited on to the well cleaned microscopic glass substrates using nebulized-spray pyrolysis (n-SP) technique by varying the water to ethanol solvent proportion. The deposited thin films were characterized by X-ray diffraction (XRD), UV-Vis-NIR spectroscopy, field emission scanning electron microscopy and Hall measurements to study the structural, optical, surface morphological and electrical properties of the films, respectively. Results of the analyzes show that the films are polycrystalline, having tetragonal structure with the preferred orientation along (110) plane. The grain size varies between 7 to 20 nm. The optimized films exhibit the optical transparency of 85 % at the wavelength of 580 nm. The optical bandgap lies in the range of 3.94 to 4 eV. The optimized films, deposited with 40 % of ethanol proportion are having the mean resistivity 4.72×10-3 Ω-cm, carrier concentration 1.79×1020 cm3 and the mobility 7 cm2/Vs.

  10. Effect of solvent ratio on the optoelectronic properties of fluorine doped tin oxide thin films

    SciTech Connect

    Karthick, P.; Divya, V.; Sridharan, M.; Jeyadheepan, K.

    2015-06-24

    Fluorine doped tin oxide (FTO) thin films were deposited on to the well cleaned microscopic glass substrates using nebulized-spray pyrolysis (n-SP) technique by varying the water to ethanol solvent proportion. The deposited thin films were characterized by X-ray diffraction (XRD), UV-Vis-NIR spectroscopy, field emission scanning electron microscopy and Hall measurements to study the structural, optical, surface morphological and electrical properties of the films, respectively. Results of the analyzes show that the films are polycrystalline, having tetragonal structure with the preferred orientation along (110) plane. The grain size varies between 7 to 20 nm. The optimized films exhibit the optical transparency of 85 % at the wavelength of 580 nm. The optical bandgap lies in the range of 3.94 to 4 eV. The optimized films, deposited with 40 % of ethanol proportion are having the mean resistivity 4.72×10{sup −3} Ω-cm, carrier concentration 1.79×10{sup 20} cm{sup 3} and the mobility 7 cm{sup 2}/Vs.

  11. Optimisation of amorphous zinc tin oxide thin film transistors by remote-plasma reactive sputtering

    NASA Astrophysics Data System (ADS)

    Niang, K. M.; Cho, J.; Heffernan, S.; Milne, W. I.; Flewitt, A. J.

    2016-08-01

    The influence of the stoichiometry of amorphous zinc tin oxide (a-ZTO) thin films used as the semiconducting channel in thin film transistors (TFTs) is investigated. A-ZTO has been deposited using remote-plasma reactive sputtering from zinc:tin metal alloy targets with 10%, 33%, and 50% Sn at. %. Optimisations of thin films are performed by varying the oxygen flow, which is used as the reactive gas. The structural, optical, and electrical properties are investigated for the optimised films, which, after a post-deposition annealing at 500 °C in air, are also incorporated as the channel layer in TFTs. The optical band gap of a-ZTO films slightly increases from 3.5 to 3.8 eV with increasing tin content, with an average transmission ˜90% in the visible range. The surface roughness and crystallographic properties of the films are very similar before and after annealing. An a-ZTO TFT produced from the 10% Sn target shows a threshold voltage of 8 V, a switching ratio of 108, a sub-threshold slope of 0.55 V dec-1, and a field effect mobility of 15 cm2 V-1 s-1, which is a sharp increase from 0.8 cm2 V-1 s-1 obtained in a reference ZnO TFT. For TFTs produced from the 33% Sn target, the mobility is further increased to 21 cm2 V-1 s-1, but the sub-threshold slope is slightly deteriorated to 0.65 V dec-1. For TFTs produced from the 50% Sn target, the devices can no longer be switched off (i.e., there is no channel depletion). The effect of tin content on the TFT electrical performance is explained in the light of preferential sputtering encountered in reactive sputtering, which resulted in films sputtered from 10% and 33% Sn to be stoichiometrically close to the common Zn2SnO4 and ZnSnO3 phases.

  12. Optical, structural and electrical properties of tin doped indium oxide thin films prepared by spray-pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Subba Ramaiah, Kodigala; Sundara Raja, V.; Bhatnagar, A. K.; Tomlinson, R. D.; Pilkington, R. D.; Hill, A. E.; Chang, S. J.; Su, Y. K.; Juang, F. S.

    2000-07-01

    Tin doped indium oxide (In2O3:Sn) or indium tin oxide (ITO) thin films have been successfully deposited by the low cost spray-pyrolysis method. Low sheet resistance and high mobility films were obtained when the films were deposited at the substrate temperature of 793 K. The direct optical bandgaps for the films deposited at 793 (a) and 753 K (b) were found to be 3.46 and 3.40 eV, respectively. Similarly, the indirect bandgaps for a- and b-type films were found to be 3.0 and 2.75 eV, respectively. The Burstein-Moss shift was observed in the films. The refractive index (n) and extinction coefficient (k) were found to be in the range of 2.1 to 1.1 and 0.6 to 0.01, respectively. The various scattering mechanisms such as lattice, ionized impurity, neutral impurity, grain boundary and alloy scattering due to variation of theoretical mobilities with temperature are discussed, in order to compare experimental results. In the lattice scattering mechanism, the quantum size effect phenomena were employed to estimate the energy dilation (EI). The a-type films exhibited SnO2 as secondary phase whereas b-type films showed single phase In2O3:Sn with high sheet resistance. The lattice constants were found to be 10.16 and 10.09 Å for a- and b-type films, respectively.

  13. Room temperature synthesis of indium tin oxide nanotubes with high precision wall thickness by electroless deposition.

    PubMed

    Boehme, Mario; Ionescu, Emanuel; Fu, Ganhua; Ensinger, Wolfgang

    2011-01-01

    Conductive nanotubes consisting of indium tin oxide (ITO) were fabricated by electroless deposition using ion track etched polycarbonate templates. To produce nanotubes (NTs) with thin walls and small surface roughness, the tubes were generated by a multi-step procedure under aqueous conditions. The approach reported below yields open end nanotubes with well defined outer diameter and wall thickness. In the past, zinc oxide films were mostly preferred and were synthesized using electroless deposition based on aqueous solutions. All these methods previously developed, are not adaptable in the case of ITO nanotubes, even with modifications. In the present work, therefore, we investigated the necessary conditions for the growth of ITO-NTs to achieve a wall thickness of around 10 nm. In addition, the effects of pH and reductive concentrations for the formation of ITO-NTs are also discussed.

  14. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Morales-Masis, M.; Ding, L.; Dauzou, F.; Jeangros, Q.; Hessler-Wyser, A.; Nicolay, S.; Ballif, C.

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2)-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  15. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    SciTech Connect

    Morales-Masis, M. Ding, L.; Dauzou, F.; Jeangros, Q.; Hessler-Wyser, A.; Nicolay, S.; Ballif, C.

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  16. Pulsed laser deposition of ITO thin films and their characteristics

    SciTech Connect

    Zuev, D. A. Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Khramova, O. D.; Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A. N.; Rumyanzeva, M. N.; Gaskov, A. M.

    2012-03-15

    The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 Multiplication-Sign 10{sup -4} {Omega} cm has been achieved in the ITO films with content of Sn 5 at %.

  17. Characterization of reliability of printed indium tin oxide thin films.

    PubMed

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments. PMID:24245331

  18. Pulsed laser deposited indium tin oxides as alternatives to noble metals in the near-infrared region

    NASA Astrophysics Data System (ADS)

    Fang, Xu; Mak, C. L.; Zhang, Shiyu; Wang, Zhewei; Yuan, Wenjia; Ye, Hui

    2016-06-01

    Transparent conductive indium tin oxide thin films with thickness around 200 nm were deposited on glass substrates by pulsed laser deposition technology. The microstructure and the electrical and optical properties of the ITO films deposited under different oxygen pressures and substrate temperatures were systematically investigated. Distinct different x-ray diffraction patterns revealed that the crystallinity of ITO films was highly influenced by deposition conditions. The highest carrier concentration of the ITO films was obtained as 1.34  ×  1021 cm‑3 with the lowest corresponding resistivity of 2.41  ×  10‑4 Ω cm. Spectroscopic ellipsometry was applied to retrieve the dielectric permittivity of the ITO films to estimate their potential as plasmonic materials in the near-infrared region. The crossover wavelength (the wavelength where the real part of the permittivity changes from positive to negative) of the ITO films exhibited high dependence on the deposition conditions and was optimized to as low as 1270 nm. Compared with noble metals (silver or gold etc), the lower imaginary part of the permittivity (<3) of ITO films suggests the potential application of ITO in the near-infrared range.

  19. Pulsed laser deposited indium tin oxides as alternatives to noble metals in the near-infrared region.

    PubMed

    Fang, Xu; Mak, C L; Zhang, Shiyu; Wang, Zhewei; Yuan, Wenjia; Ye, Hui

    2016-06-01

    Transparent conductive indium tin oxide thin films with thickness around 200 nm were deposited on glass substrates by pulsed laser deposition technology. The microstructure and the electrical and optical properties of the ITO films deposited under different oxygen pressures and substrate temperatures were systematically investigated. Distinct different x-ray diffraction patterns revealed that the crystallinity of ITO films was highly influenced by deposition conditions. The highest carrier concentration of the ITO films was obtained as 1.34  ×  10(21) cm(-3) with the lowest corresponding resistivity of 2.41  ×  10(-4) Ω cm. Spectroscopic ellipsometry was applied to retrieve the dielectric permittivity of the ITO films to estimate their potential as plasmonic materials in the near-infrared region. The crossover wavelength (the wavelength where the real part of the permittivity changes from positive to negative) of the ITO films exhibited high dependence on the deposition conditions and was optimized to as low as 1270 nm. Compared with noble metals (silver or gold etc), the lower imaginary part of the permittivity (<3) of ITO films suggests the potential application of ITO in the near-infrared range. PMID:27054885

  20. Pulsed laser deposited indium tin oxides as alternatives to noble metals in the near-infrared region

    NASA Astrophysics Data System (ADS)

    Fang, Xu; Mak, C. L.; Zhang, Shiyu; Wang, Zhewei; Yuan, Wenjia; Ye, Hui

    2016-06-01

    Transparent conductive indium tin oxide thin films with thickness around 200 nm were deposited on glass substrates by pulsed laser deposition technology. The microstructure and the electrical and optical properties of the ITO films deposited under different oxygen pressures and substrate temperatures were systematically investigated. Distinct different x-ray diffraction patterns revealed that the crystallinity of ITO films was highly influenced by deposition conditions. The highest carrier concentration of the ITO films was obtained as 1.34  ×  1021 cm-3 with the lowest corresponding resistivity of 2.41  ×  10-4 Ω cm. Spectroscopic ellipsometry was applied to retrieve the dielectric permittivity of the ITO films to estimate their potential as plasmonic materials in the near-infrared region. The crossover wavelength (the wavelength where the real part of the permittivity changes from positive to negative) of the ITO films exhibited high dependence on the deposition conditions and was optimized to as low as 1270 nm. Compared with noble metals (silver or gold etc), the lower imaginary part of the permittivity (<3) of ITO films suggests the potential application of ITO in the near-infrared range.

  1. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    SciTech Connect

    Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha; Louis, Godfrey; Vijayakumar, K. P.; Kumar, K. Rajeev

    2015-06-24

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.

  2. High angular sensitivity thin film tin oxide sensor

    NASA Astrophysics Data System (ADS)

    Kaur, Davinder; Madaan, Divya; Sharma, V. K.; Kapoor, A.

    2016-05-01

    We present theoretical anlaysis of a thin film SnO2 (Tin Oxide) sensor for the measurement of variation in the refractive index of the bulk media. It is based on lossy mode resonance between the absorbing thin film lossy modes and the evanescent wave. Also the addition of low index dielectric matching layer between the prism and the lossy waveguiding layer future increase the angular sensitivity and produce an efficient refractive index sensor. The angular interrogation is done and obtained sensitivity is 110 degree/RIU. Theoretical analysis of the proposed sensor based on Fresnel reflection coefficients is presented. This enhanced sensitivity will further improve the monitoring of biomolecular interactions and the higher sensitivity of the proposed configurations makes it to be a much better option to be employed for biosensing applications.

  3. Physical properties of antimony-doped tin oxide thick films

    NASA Astrophysics Data System (ADS)

    Kaneko, H.; Miyake, K.

    1982-05-01

    The physical properties of Sb-doped SnO2 thick films, prepared by a repeating chemical spray deposition method, have been investigated. The films 1000-14 000-Å thick were deposited on fused quartz, borosilicate glass, and soda lime glass substrates at 600 °C using an aqueous solution of a mixture of SnCl4 and SbCl3. The films prepared by the method are homogeneous, and the electrical resistivity of the films on fused quartz and borosilicate glass substrates were found to be independent of the film thickness, and are 9.5×10-4 Ω cm, and 8.6×10-4 Ω cm, respectively. The resistivity of the films thicker than 4000 Å on soda lime glass substrates is almost constant, and is 1.8×10-3 Ω cm, although a large increase in the resistivity of the thinner films was observed. The optical band gap of the films on fused quartz and borosilicate glass substrates is also independent of the film thickness, and is almost the same: 3.75 eV. But the band gap of the films on soda lime glass substrates depends on the film thickness, and increases from 2.85 to 3.08 eV with increasing thickness from 2250 to 13 000 Å. The Hall mobility and carrier concentration of the films were also measured. The results of x-ray diffraction analysis and observations by SEM are described.

  4. A novel synthesis of tin oxide thin films by the sol-gel process for optoelectronic applications

    SciTech Connect

    Marikkannan, M.; Vishnukanthan, V.; Vijayshankar, A.; Mayandi, J.; Pearce, J. M.

    2015-02-15

    A novel and simple chemical method based on sol-gel processing was proposed to deposit metastable orthorhombic tin oxide (SnOx) thin films on glass substrates at room temperature. The resultant samples are labeled according to the solvents used: ethanol (SnO-EtOH), isopropanol (SnO-IPA) and methanol (SnO-MeOH). The variations in the structural, morphological and optical properties of the thin films deposited using different solvents were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence (PL) analysis. The XRD patterns confirm that all the films, irrespective of the solvents used for preparation, were polycrystalline in nature and contained a mixed phases of tin (II) oxide and tin (IV) oxide in a metastable orthorhombic crystal structure. FTIR spectra confirmed the presence of Sn=O and Sn-O in all of the samples. PL spectra showed a violet emission band centered at 380 nm (3.25 eV) for all of the solvents. The UV-vis spectra indicated a maximum absorption band shown at 332 nm and the highest average transmittance around 97% was observed for the SnO-IPA and SnO-MeOH thin film samples. The AFM results show variations in the grain size with solvent. The structural and optical properties of the SnO thin films indicate that this method of fabricating tin oxide is promising and that future work is warranted to analyze the electrical properties of the films in order to determine the viability of these films for various transparent conducting oxide applications.

  5. Metal Gate (TiN, TiC, TaN) Film Stack Stress

    NASA Astrophysics Data System (ADS)

    Bello, A. F.; Paul, Abhijeet; Kim, Hoon

    2015-10-01

    Successful stress engineering in semiconductor device structures must consider all the contributions to the stress field including those not typically considered for stress, such as work function metal (WFM) gate layers that are used to tune to the desired work function level. These films induce stress especially since they are so close to the channel region. In this study we measure stress from blanket layer films and combinations of TiN, TiC, and TaN deposited on Hf oxide, at thicknesses that are typically used for advanced metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Tungsten (W) deposited on top of the WFM layer stacks is also measured. For combination film stacks, the stress is measured after each deposition step. The induced stress from the WFM is significant, in the range of hundreds of MPa, and varies according to the thickness and processing conditions such as annealing temperature and time, etc. Results from these blanket film measurements were used as a guide for technology computer-aided design (TCAD) modeling of the stress field in FinFET structures with design rules comparable to 10-nm technology. The tensor stress components identify areas of compressive and tensile stress and with a magnitude similar to expected results. The stress field could be used to calculate the FinFET device performance, and in this case an example is provided with the relative improvement in drain current.

  6. The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition

    SciTech Connect

    Ahn, Byung Du; Choi, Dong-won Choi, Changhwan; Park, Jin-Seong

    2014-09-01

    We investigated the electrical properties of zinc tin oxide (ZTO) films deposited via atomic layer deposition and compared them to ZnO and SnO{sub 2} films as a function of the annealing temperature. The ZTO and ZnO, except for SnO{sub 2}, films exhibited an electrical transition from a metal to semiconductor characteristics when annealed above 300 °C. The X-ray photoelectron spectroscopy analyses indicate that the relative area of the oxygen vacancy-related peak decreased from 58% to 41% when annealing at temperatures above 400 °C. Thin film transistors incorporating ZTO active layers demonstrated a mobility of 13.2 cm{sup 2}/V s and a negative bias instability of −0.2 V.

  7. Temperature dependence of inductively coupled plasma assisted growth of TiN thin films.

    SciTech Connect

    Meng, W. J.; Curtis, T. J.; Rehn, L. E.; Baldo, P. M.; Materials Science Division; Louisiana State Univ.

    1999-11-01

    The use of low pressure high density plasmas to assist the synthesis of ceramic thin film materials is in its infancy. Using an inductively coupled plasma assisted magnetron sputtering system, we examine the dependence of plasma-assisted growth of TiN thin films on growth temperature at different ratios of ion flux to neutral atom flux. Our results indicate that a temperature independent densification of TiN films occurs above a certain ion to neutral atom flux ratio. As an example of this temperature independent densification, we demonstrate the formation of dense B1 TiN crystalline thin films at growth temperatures down to {approx}100 K.

  8. Vapor deposition of thin films

    DOEpatents

    Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  9. Effects of Substrate Bias on the Hardness and Resistivity of Reactively Sputtered TaN and TiN Thin Films

    NASA Astrophysics Data System (ADS)

    Lu, Junqing; Arshi, Nishat

    2016-06-01

    TaN and TiN films are being widely used as conductive layers in electronic devices or protective coatings on metal surfaces. Among various deposition methods, reactive magnetron sputtering is preferred partly due to its ability to control the energy of the depositing ions by applying different substrate bias voltages. In this study, TaN and TiN films were deposited on Si/SiO2 substrates by using direct current magnetron sputtering technique with 370 W target power at 1.9 mTorr and under different substrate biases. The effects of the substrate bias on both the resistivity and the hardness of the deposited TaN and TiN films were investigated. The phase and composition of the deposited films were investigated by x-ray diffraction, the resistivity was measured by a four-point probe, and the hardness was obtained by nano-indentation. For TaN films, the use of substrate bias not only increased the hardness but also increased the resistivity. Moreover, the formation of the Ta3N5 phase at the -300 V substrate bias significantly increased the TaN film resistivity. For TiN films, the optimum resistivity (minimum) of 19.5 µΩ-cm and the hardness (maximum) of 31.5 GPa were achieved at the -100 V substrate bias. Since the phase changes occurred in both the TaN and the TiN films at higher substrate biases and these phase changes negatively affected the resistivity or hardness property of the films, the substrate bias should not significantly exceed -100 V.

  10. Deposition of TiN and HfO{sub 2} in a commercial 200 mm remote plasma atomic layer deposition reactor

    SciTech Connect

    Heil, S. B. S.; Hemmen, J. L. van; Hodson, C. J.; Singh, N.; Klootwijk, J. H.; Roozeboom, F.; Sanden, M. C. M. van de; Kessels, W. M. M.

    2007-09-15

    The authors describe a remote plasma atomic layer deposition reactor (Oxford Instruments FlexAL trade mark sign ) that includes an inductively coupled plasma source and a load lock capable of handling substrates up to 200 mm in diameter. The deposition of titanium nitride (TiN) and hafnium oxide (HfO{sub 2}) is described for the combination of the metal-halide precursor TiCl{sub 4} and H{sub 2}-N{sub 2} plasma and the combination of the metallorganic precursor Hf[N(CH{sub 3})(C{sub 2}H{sub 5})]{sub 4} and O{sub 2} plasma, respectively. The influence of the plasma exposure time and substrate temperature has been studied and compositional, structural, and electrical properties are reported. TiN films with a low Cl impurity content were obtained at 350 deg. C at a growth rate of 0.35 A /cycle with an electrical resistivity as low as 150 {mu}{omega} cm. Carbon-free (detection limit <2 at. %) HfO{sub 2} films were obtained at a growth rate of 1.0 A /cycle at 290 deg. C. The thickness and resisitivity nonuniformity was <5% for the TiN and the thickness uniformality was <2% for the HfO{sub 2} films as determined over 200 mm wafers.

  11. Influence of the triethanolamine concentration on the optical properties of tin sulphide thin films by the Photothermal Deflection Spectroscopy

    NASA Astrophysics Data System (ADS)

    Gaied, I.; Akkari, A.; Yacoubi, N.; Kamoun, N.

    2010-03-01

    The optical properties of Tin sulphide thin films grown on a glass substrate by chemical bath deposition were investigated by the Photothermal Deflection Spectroscopy. The experimental normalised amplitude curves of the photothermal signal versus wavelength are compared to the corresponding theoretical ones versus optical absorption coefficient in order to determine the optical absorption spectrum. Then using the Tauc law, one can deduce the energy gap. The influence of the triethanolamine concentration (TEA) in the solution bath on the optical properties was successfully studied.

  12. The electronic structure of co-sputtered zinc indium tin oxide thin films

    SciTech Connect

    Carreras, Paz; Antony, Aldrin; Bertomeu, Joan; Gutmann, Sebastian; Schlaf, Rudy

    2011-10-01

    Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses {approx}50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO{sub 2} films.

  13. Defects evolution and their impacts on conductivity of indium tin oxide thin films upon thermal treatment

    SciTech Connect

    Li, Qichao; Mao, Wenfeng; Zhou, Yawei; Yang, Chunhong; Liu, Yong; He, Chunqing

    2015-07-14

    Indium tin oxide (ITO) thin films were deposited on silicon substrates by radio-frequency magnetron sputtering. The influence of annealing temperature on the crystallite, surface morphology, defects evolution, and electrical property of the thin films was studied. The conductivity of the ITO films was significantly enhanced by two orders of magnitude by increasing the annealing temperature up to 600 °C, which was interpreted in point view of defects evolution in ITO films as revealed by positron annihilation. It was interesting to find that positron diffusion length was amazingly comparable to crystallite size in ITO films annealed below 300 °C, indicating positrons were preferentially localized and annihilated in defects around crystallite boundaries. By further increasing the temperature, positron diffusion length was far beyond the grain size with little increment. This demonstrated that defects were effectively removed around grain boundaries. The results indicated defect structure around crystallite/grain boundaries played an important role on carrier transportation in nanocrystal ITO films.

  14. Preparation and characterization of tin diselenide thin film by spray pyrolysis technique

    SciTech Connect

    Amalraj, L.; Jayachandran, M.; Sanjeeviraja, C. . E-mail: sanjeeviraja@rediffmail.com

    2004-12-02

    Tin diselenide (SnSe{sub 2}) thin film is deposited on to non-conducting glass substrate by spray pyrolysis technique at an optimized substrate temperature of 523 K. Hot probe method is used to identify the type of conductivity of the film to be an n-type semiconductor. X-ray diffraction study reveals the polycrystalline nature of the film with a preferential orientation growth. Spherical shaped grains with an average diameter of 233 nm are observed from the SEM photograph. The elemental composition on the surface of the film is analyzed with EDAX spectrum and formed almost in stoichiometric in composition. Room temperature resistivity of 1.27 x 10{sup 4} {omega} cm is determined using the linear four-probe method. Activation energy of 0.058 eV is determined by studying the variation of resistivity of the film with temperature. Optical absorption spectrum of this sprayed SnSe{sub 2} thin film is analyzed and found to have a direct allowed transition with a band gap of 1.48 eV.

  15. Deposited films with improved microstructures

    DOEpatents

    Patten, James W.; Moss, Ronald W.; McClanahan, Edwin D.

    1984-01-01

    Methods for improving microstructures of line-of-sight deposited films are described. Columnar growth defects ordinarily produced by geometrical shadowing during deposition of such films are eliminated without resorting to post-deposition thermal or mechanical treatments. The native, as-deposited coating qualities, including homogeneity, fine grain size, and high coating-to-substrate adherence, can thus be retained. The preferred method includes the steps of emitting material from a source toward a substrate to deposit a coating non-uniformly on the substrate surface, removing a portion of the coating uniformly over the surface, again depositing material onto the surface, but from a different direction, and repeating the foregoing steps. The quality of line-of-sight deposited films such as those produced by sputtering, progressively deteriorates as the angle of incidence between the flux and the surface becomes increasingly acute. Depositing non-uniformly, so that the coating becomes progressively thinner as quality deteriorates, followed by uniformly removing some of the coating, such as by resputtering, eliminates the poor quality portions, leaving only high quality portions of the coating. Subsequently sputtering from a different direction applies a high quality coating to other regions of the surface. Such steps can be performed either simultaneously or sequentially to apply coatings of a uniformly high quality, closed microstructure to three-dimensional or large planar surfaces.

  16. A study on the high temperature-dependence of the electrical properties in a solution-deposited zinc-tin-oxide thin-film transistor operated in the saturation region

    NASA Astrophysics Data System (ADS)

    Yu, Kyeong Min; Bae, Byung Seong; Jung, Myunghee; Yun, Eui-Jung

    2016-06-01

    We investigate the effects of high temperatures in the range of 292 - 393 K on the electrical properties of solution-processed amorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) operated in the saturation region. The fabricated a-ZTO TFTs have a non-patterned bottom gate and top contact structure, and they use a heavily-doped Si wafer and SiO2 as a gate electrode and a gate insulator layer, respectively. In a-ZTO TFTs, the trap release energy ( E TR ) was deduced by using Maxwell-Boltzmann statistics. The decreasing E TR toward zero with increasing gate voltage (the density of trap states ( n s )) in the a-ZTO active layer can be attributed to a shift of the Fermi level toward the mobility edge with increasing gate voltage. The TFTs with low gate voltage (low n s ) exhibit multiple trap and release characteristics and show thermally-activated behavior. In TFTs with a high gate voltage (high n s ), however, we observe decreasing mobility and conductivity with increasing temperature at temperatures ranging from 303 to 363 K. This confirms that the E TR can drop to zero, indicating a shift of the Fermi level beyond the mobility edge. Hence, the mobility edge is detected at the cusp between thermally-activated transport and band transport.

  17. Improved conductivity of indium-tin-oxide film through the introduction of intermediate layer

    NASA Astrophysics Data System (ADS)

    Ng, S. W.; Yam, F. K.; Beh, K. P.; Tneh, S. S.; Hassan, Z.

    2016-09-01

    A thin intermediate layer (Ag, AuSn, In, Ni, Sn, SiO2) was individually deposited on glass substrates prior to the deposition of indium-tin-oxide (ITO) thin film by radio-frequency (RF) magnetron sputtering employing ITO target (composition ratio of In2O3:SnO2 = 9:1). The structural, optical and electrical properties were investigated to compare the ITO thin film with and without an intermediate layer. The preferential orientation of all ITO films was along (222) plane. Although all thin films were polycrystalline, the presence of intermediate layer promoted the overall crystallinity. The sheet resistance and resistivity of the ITO film were reduced from ∼68 Ω/□ to ∼29-45 Ω/□, and 16.2 × 10-4 Ω cm up to 7.58 × 10-4 Ω cm, respectively, by inserting a thin metal layer underneath the ITO film, and it is dependent on the degree of crystallization. The optical transmittance in the visible region varies from 40 to 88% for different samples. Based on the evaluation from Tauc plot, the optical band gap falls in the range of 4.02-4.12 eV. Physical film thickness was compared with that evaluated by optical measurement in the visible range and the physical thickness was found to be smaller. Similarly, the carrier concentration/scattering time from Hall effect measurement were also compared with that from optical measurement in the infrared region. Haacke's figure of merit (FOM) was employed to assess the quality of the ITO films, and the highest FOM is credited to ITO/In up to ∼8 × 10-3 Ω-1 in the visible light region.

  18. Improved conductivity of indium-tin-oxide film through the introduction of intermediate layer

    NASA Astrophysics Data System (ADS)

    Ng, S. W.; Yam, F. K.; Beh, K. P.; Tneh, S. S.; Hassan, Z.

    2016-09-01

    A thin intermediate layer (Ag, AuSn, In, Ni, Sn, SiO2) was individually deposited on glass substrates prior to the deposition of indium-tin-oxide (ITO) thin film by radio-frequency (RF) magnetron sputtering employing ITO target (composition ratio of In2O3:SnO2 = 9:1). The structural, optical and electrical properties were investigated to compare the ITO thin film with and without an intermediate layer. The preferential orientation of all ITO films was along (222) plane. Although all thin films were polycrystalline, the presence of intermediate layer promoted the overall crystallinity. The sheet resistance and resistivity of the ITO film were reduced from ∼68 Ω/□ to ∼29-45 Ω/□, and 16.2 × 10-4 Ω cm up to 7.58 × 10-4 Ω cm, respectively, by inserting a thin metal layer underneath the ITO film, and it is dependent on the degree of crystallization. The optical transmittance in the visible region varies from 40 to 88% for different samples. Based on the evaluation from Tauc plot, the optical band gap falls in the range of 4.02-4.12 eV. Physical film thickness was compared with that evaluated by optical measurement in the visible range and the physical thickness was found to be smaller. Similarly, the carrier concentration/scattering time from Hall effect measurement were also compared with that from optical measurement in the infrared region. Haacke's figure of merit (FOM) was employed to assess the quality of the ITO films, and the highest FOM is credited to ITO/In up to ∼8 × 10-3 Ω-1 in the visible light region.

  19. Influence of high power impulse magnetron sputtering plasma ionization on the microstructure of TiN thin films

    NASA Astrophysics Data System (ADS)

    Ehiasarian, A. P.; Vetushka, A.; Gonzalvo, Y. Aranda; Sáfrán, G.; Székely, L.; Barna, P. B.

    2011-05-01

    HIPIMS (High Power Impulse Magnetron Sputtering) discharge is a new PVD technology for the deposition of high-quality thin films. The deposition flux contains a high degree of metal ionization and nitrogen dissociation. The microstructure of HIPIMS-deposited nitride films is denser compared to conventional sputter technologies. However, the mechanisms acting on the microstructure, texture and properties have not been discussed in detail so far. In this study, the growth of TiN by HIPIMS of Ti in mixed Ar and N2 atmosphere has been investigated. Varying degrees of metal ionization and nitrogen dissociation were produced by increasing the peak discharge current (Id) from 5 to 30 A. The average power was maintained constant by adjusting the frequency. Mass spectrometry measurements of the deposition flux revealed a high content of ionized film-forming species, such as Ti1+, Ti2+ and atomic nitrogen N1+. Ti1+ ions with energies up to 50 eV were detected during the pulse with reducing energy in the pulse-off times. Langmuir probe measurements showed that the peak plasma density during the pulse was 3 × 1016 m-3. Plasma density, and ion flux ratios of N1+: N21+ and Ti1+: Ti0 increased linearly with peak current. The ratios exceeded 1 at 30 A. TiN films deposited by HIPIMS were analyzed by X-ray diffraction, and transmission electron microscopy. At high Id, N1+: N21+> 1 and Ti1+: Ti0> 1 were produced; a strong 002 texture was present and column boundaries in the films were atomically tight. As Id reduced and N1+: N21+ and Ti1+: Ti0 dropped below 1, the film texture switched to strong 111 with a dense structure. At very low Id, porosity between columns developed. The effects of the significant activation of the deposition flux observed in the HIPIMS discharge on the film texture, microstructure, morphology and properties are discussed.

  20. Influence of preferred orientation on the electrical conductivity of fluorine-doped tin oxide films.

    PubMed

    Wang, Jian Tao; Shi, Xiang Lei; Liu, Wei Wei; Zhong, Xin Hua; Wang, Jian Nong; Pyrah, Leo; Sanderson, Kevin D; Ramsey, Philip M; Hirata, Masahiro; Tsuri, Keiko

    2014-01-01

    Current development of high-performance transparent conductive oxide (TCO) films is limited with tradeoff between carrier mobility and concentration since none of them can be improved without sacrificing the other. In this study, we prepare fluorine doped tin oxide (FTO) films by chemical vapor deposition with inclusions of different additives and report that the mobility can be varied from 0.65 to 28.5 cm(2) V(-1) s(-1) without reducing the achieved high carrier concentration of 4 × 10(20) cm(-3). Such an increase in mobility is shown to be clearly associated with the development of (200) preferred orientation (PO) but concurrent degradation of (110) PO in films. Thus, at a constant high carrier concentration, the electrical conductivity can be improved via carrier mobility simply by PO control. Such a one-step approach avoiding conventional post-deposition treatment is suggested for developing next-generation FTO as well as other TCO films with better than ever conductivities. PMID:24419455

  1. Properties of TiN and TiN deposited by CVD on graphite for pyrochemical applications.

    SciTech Connect

    Maiya, P. S.; Moon, B. M.

    1997-12-17

    High-density TiN (>98% of theoretical) has been prepared by hot pressing TiN powder with 2-4 wt.% Li{sub 2}C0{sub 3} at temperatures between 1150-1550 C and pressures of {approx}40-50 MPa. The Li{sub 2}C0{sub 3} served as a fugitive sintering aid, enabling attainment of high density at low temperatures without adversely affecting the inherently good properties. Variation in processing variables and TiN powder characteristics resulted in material with various porosities. Measurement of mechanical properties such as flexural strength and fracture toughness showed that the high-density material has mechanical properties that are superior to those of several oxide ceramics. We have also quantified the effects of porosity on mechanical properties. In addition, adhesion and chemical stability tests were used to investigate graphite coated with TiN by chemical vapor deposition (CVD). Pin-pull tests were used to determine coating adhesion and failure stresses were analyzed by Weibull statistics. All pin-pull tests resulted in fracture of the graphite substrate, rather than separation at the TiN/graphite interface. The data showed a good fit to the two-parameter Weibull expression, with a failure strength of 16.4 MPa and Weibull modulus of 9.3. Both the high-density TiN and the TiN coating on the graphite were exposed to a corrosive molten salt CaCl{sub 2}-7 wt.% CaO and a liquid metal alloy (Zn-10 wt.% Mg) at 800 C for 168 h to determine chemical interactions. No reaction was detected by scanning electron microscopy (SEM) or energy-dispersive X-ray (EDX) analysis. Thus, graphite coated with TiN by CVD combines the thermodynamic stability of TiN when exposed to reactive molten metals and salts, with the excellent machinability of graphite, and hence is promising for use in container vessels for pyrochemical processing of certain rare-earth and nuclear metals, where chemical inertness and good matching of thermal expansion coefficients are required.

  2. Effect of thickness on electrical properties of SILAR deposited SnS thin films

    NASA Astrophysics Data System (ADS)

    Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

    2016-03-01

    Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

  3. The aerosol assisted chemical vapour deposition of SnSe and Cu₂SnSe₃ thin films from molecular precursors.

    PubMed

    Kevin, Punarja; Malik, Sajid N; Malik, Mohammad A; O'Brien, Paul

    2014-11-28

    Tin selenide (SnSe) and copper tin selenide (Cu2SnSe3) thin films have been deposited onto glass substrates by AACVD using [Sn(Ph2PSe2)2] or a mixture of [Sn(Ph2PSe2)2] and [Cu(acac)2] respectively. PMID:25284472

  4. Indium tin oxide with titanium doping for transparent conductive film application on CIGS solar cells

    NASA Astrophysics Data System (ADS)

    Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Li, Ying-Tse; Huang, Shi-Da; Yu, Hau-Wei; Pu, Nen-Wen; Liang, Shih-Chang

    2015-11-01

    In this study, Ti-doped indium tin oxide (ITO:Ti) thin films were fabricated using a DC-magnetron sputtering deposition method. The thin films were grown without introducing oxygen or heating the substrate, and no post-growth annealing was performed after fabrication. The thickness of the ITO:Ti thin films (350 nm) was controlled while increasing the sputtering power from 50 to 150 W. According to the results, the optimal optoelectronic properties were observed in ITO:Ti thin films grown at a sputtering power of 100 W, yielding a reduced resistivity of 3.2 × 10-4 Ω-cm and a mean high transmittance of 83% at wavelengths ranging from 400 to 800 nm. The optimal ITO:Ti thin films were used to fabricate a Cu(In,Ga)Se2 solar cell that exhibited a photoelectric conversion efficiency of 11.3%, a short-circuit current density of 33.1 mA/cm2, an open-circuit voltage of 0.54 V, and a fill factor of 0.64.

  5. Properties of cadmium-doped tin oxide thin films prepared by spray pyrolysis method

    NASA Astrophysics Data System (ADS)

    Choudhury, M. G. M.; Hossain, M. Mortuza; Rahman, M. Mozibur; Hakim, M. O.; Khan, M. K. R.

    2003-10-01

    Cadmium doped Tin Oxide Thin Films have been prepared by Spray Pyrolysis Method on glass substrates at 350°C. Structural, electrical and optical properties have been measured. From XRD it is found that films deposited are crystalline in nature with tetragonal structure having lattice constant a=b=3.86 A° and c=5.62A°. Hall effect measurements show that films prepared are of n-type and the carrier concentration (~1018 cm-3) and room temperature conductivity decreases with the increases in cadmium concentration in the films. Activation energy has been calculated from conductivity measurements and it was found that conduction within the temperature range we have measured is due to hoping of carriers through the spectrum of localized states. Band gap of the un-doped films calculated from transmission spectrum is about 3.1 eV and the value decrease slightly with the addition of cadmium. The refractive index, extinction coefficient, real and imaginary parts of the dielectric constant have been calculated from the optical spectra. The refractive index decreases with photon energy and also decreases slightly with cadmium concentration while extinction coefficient increases with photon energy.

  6. Optimal deposition conditions of TiN barrier layers for the growth of vertically aligned carbon nanotubes onto metallic substrates

    NASA Astrophysics Data System (ADS)

    García-Céspedes, J.; Álvarez-García, J.; Zhang, X.; Hampshire, J.; Bertran, E.

    2009-05-01

    Plasma enhanced chemical deposition (PECVD) has proven over the years to be the preferred method for the growth of vertically aligned carbon nanotubes and nanofibres (VACNTs and VACNFs, respectively). In particular, carbon nanotubes (CNTs) grown on metallic surfaces present a great potential for high power applications, including low resistance electrical contacts, high power switches, electron guns or supercapacitors. Nevertheless, the deposition of CNTs onto metallic substrates is challenging, due to the intrinsic incompatibility between such substrates and the metallic precursor layers required to promote the growth of CNTs. In particular, the formation of CNT films is assisted by the presence of a nanometric (10-100 nm) monolayer of catalyst clusters, which act as nucleation sites for CNTs. The nanometric character of the precursor layer, together with the high growth temperature involved during the PECVD process (~700 °C), strongly favours the in-diffusion of the catalyst nanoclusters into the bulk of the metallic substrate, which results in a dramatic reduction in the nucleation of CNTs. In order to overcome this problem, it is necessary to coat the metallic substrate with a diffusion barrier layer, prior to the growth of the catalyst precursor. Unlike other conventional ceramic barrier layers, TiN provides high electrical conductivity, thus being a promising candidate for use as barrier material in applications involving low resistance contacts. In this work we investigate the anti-diffusion properties of TiN sputtered coatings and its potential applicability to the growth of CNTs onto copper substrates, using Fe as catalyst material. The barrier and catalyst layers were deposited by magnetron sputtering. Auger electron spectroscopy was used to determine the diffusivity of Fe into TiN. Morphological characterization of the CNTs coatings was performed on scanning and transmission electron microscopes. Raman spectroscopy and x-ray diffraction were employed to

  7. Microstructure and electrical properties of Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Zr{sub 0.02})O{sub 3} thin film deposited on indium tin oxide/glass substrate

    SciTech Connect

    Yang, C.H.; Sui, H.T.; Geng, F.J.; Feng, C.; Qian, J.

    2015-05-15

    Highlights: • NBTZr deposited on ITO/glass under O{sub 2} exhibits a phase-pure perovskite structure. • NBTZr shows a well-defined P–E with a remanent polarization of 11.5 μC/cm{sup 2}. • At 100 kHz and 14 V, the dielectric tunability is 44.97% and FOM is 3.58. • At 100 kHz, the ϵ{sub r} and tanδ are 205 and 0.092, respectively. - Abstract: Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Zr{sub 0.02})O{sub 3} (NBTZr) thin film has been prepared by chemical solution deposition onto indium tin oxide (ITO)/glass under O{sub 2} atmosphere. The microstructure and related electrical performance are investigated. The film exhibits a phase-pure polycrystalline perovskite structure, with evenly distributed grain size and full compactness. A well-defined polarization-electric field (P–E) loop can be observed with a remanent polarization (P{sub r}) of 11.5 μC/cm{sup 2} and small gap. At 14 V and 100 kHz, the dielectric tunability as high as 44.97% can be achieved and the dielectric constant of 205, dissipation factor of 0.092 as well as figure of merit of 3.58 are obtained.

  8. Magnetron deposited TiN coatings for protection of Al-Cu-Ag-Mg-Mn alloy

    NASA Astrophysics Data System (ADS)

    Stepanova, Tatiana V.; Kaziev, Andrey V.; Atamanov, Mikhail V.; Tumarkin, Alexander V.; Dolzhikova, Svetlana A.; Izmailova, Nelly Ph; Kharkov, Maxim M.; Berdnikova, Maria M.; Mozgrin, Dmitry V.; Pisarev, Alexander A.

    2016-09-01

    TiN coatings were deposited on a new Al super-alloy by magnetron sputtering in argon/nitrogen environment. The deposited layer structure, microhardness, adhesion, corrosion resistance, and fatigue life were investigated and tests demonstrated improved performance of the alloy.

  9. Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

    NASA Astrophysics Data System (ADS)

    Li, Yali; Li, Chunyang; He, Deyan; Li, Junshuai

    2009-05-01

    We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of ~4.6 × 10-4 Ω cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of ~1.21 × 1021 cm-3 and a lower mobility of ~11.4 cm2 V-1 s-1. More interestingly, these electrical characteristics result in the semiconductor-metal conductivity transition around room temperature for the ITO films prepared by APA.

  10. Adhesion improvement of TiN film on tool steel by a hybrid process of unbalanced magnetron sputtering and plasma-based ion implantation

    NASA Astrophysics Data System (ADS)

    Ono, T.; Uemura, M.; Yatsuzuka, M.

    2007-04-01

    An interfacial mixing layer and a titanium (Ti) layer between the titanium-nitride (TiN) film and the substrate material was produced to improve the adhesion of TiN film on tool substrates by a hybrid process of unbalanced magnetron sputtering (UBM) and plasma-based ion implantation (PBII). Before TiN deposition by UBM, the negative high-voltage pulse and DC-bias were applied to the substrate immersed in the Ti plasma, resulting in implantation as well as deposition of Ti ions to the substrate. As a result, a Ti layer and a graded mixing layer of Ti and substrate materials was produced to work as a buffer interface between substrate and TiN film. The adhesion strength of TiN film with the interfacial treatment on tool steel substrates was evaluated by scratch and indentation tests, showing the considerable improvement of adhesion by the formation of the Ti and the interfacial mixing layers. The suitable ion implantation energy for the improvement of adhesion strength was found.

  11. Ion beam sputter deposited diamond like films

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1982-01-01

    A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

  12. Electrophoretic deposition of tannic acid-polypyrrolidone films and composites.

    PubMed

    Luo, Dan; Zhang, Tianshi; Zhitomirsky, Igor

    2016-05-01

    Thin films of polyvinylpyrrolidone (PVP)-tannic acid (TA) complexes were prepared by a conceptually new strategy, based on electrophoretic deposition (EPD). Proof of concept investigations involved the analysis of the deposition yield, FTIR and UV-vis spectroscopy of the deposited material, and electron microscopy studies. The analysis of the deposition mechanism indicated that the limitations of the EPD in the deposition of small phenolic molecules, such as TA, and electrically neutral polymers, similar to PVP, containing hydrogen-accepting carbonyl groups, can be avoided. The remarkable adsorption properties of TA and film forming properties of the PVP-TA complexes allowed for the EPD of materials of different types, such as huntite mineral platelets and hydrotalcite clay particles, TiO2 and MnO2 oxide nanoparticles, multiwalled carbon nanotubes, TiN and Pd nanoparticles. Moreover, PVP-TA complexes were used for the co-deposition of different materials and formation of composite films. In another approach, TA was used as a capping agent for the hydrothermal synthesis of ZnO nanorods, which were then deposited by EPD using PVP-TA complexes. The fundamental adsorption and interaction mechanisms of TA involved chelation of metal atoms on particle surfaces with galloyl groups, π-π interactions and hydrogen bonding. The films prepared by EPD can be used for various applications, utilizing functional properties of TA, PVP, inorganic and organic materials of different types and their composites.

  13. Electrophoretic deposition of tannic acid-polypyrrolidone films and composites.

    PubMed

    Luo, Dan; Zhang, Tianshi; Zhitomirsky, Igor

    2016-05-01

    Thin films of polyvinylpyrrolidone (PVP)-tannic acid (TA) complexes were prepared by a conceptually new strategy, based on electrophoretic deposition (EPD). Proof of concept investigations involved the analysis of the deposition yield, FTIR and UV-vis spectroscopy of the deposited material, and electron microscopy studies. The analysis of the deposition mechanism indicated that the limitations of the EPD in the deposition of small phenolic molecules, such as TA, and electrically neutral polymers, similar to PVP, containing hydrogen-accepting carbonyl groups, can be avoided. The remarkable adsorption properties of TA and film forming properties of the PVP-TA complexes allowed for the EPD of materials of different types, such as huntite mineral platelets and hydrotalcite clay particles, TiO2 and MnO2 oxide nanoparticles, multiwalled carbon nanotubes, TiN and Pd nanoparticles. Moreover, PVP-TA complexes were used for the co-deposition of different materials and formation of composite films. In another approach, TA was used as a capping agent for the hydrothermal synthesis of ZnO nanorods, which were then deposited by EPD using PVP-TA complexes. The fundamental adsorption and interaction mechanisms of TA involved chelation of metal atoms on particle surfaces with galloyl groups, π-π interactions and hydrogen bonding. The films prepared by EPD can be used for various applications, utilizing functional properties of TA, PVP, inorganic and organic materials of different types and their composites. PMID:26878711

  14. Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm

    SciTech Connect

    Wang Haifeng; Huang Zhimeng; Zhang Dayong; Luo Fei; Huang Lixian; Li Yanglong; Luo Yongquan; Wang Weiping; Zhao Xiangjie

    2011-12-01

    Laser-induced-damage characteristics of commercial indium-tin oxide (ITO) films deposited by DC magnetron sputtering deposition on K9 glass substrates as a function of the film thickness have been studied at 1064 nm with a 10 ns laser pulse in the 1-on-1 mode, and the various mechanisms for thickness effect on laser-induced-damage threshold (LIDT) of the film have been discussed in detail. It is observed that laser-damage-resistance of ITO film shows dramatic thickness effect with the LIDT of the 50-nm ITO film 7.6 times as large as the value of 300 nm film, and the effect of depressed carrier density by decreasing the film thickness is demonstrated to be the primary reason. Our experiment findings indicate that searching transparent conductive oxide (TCO) film with low carrier density and high carrier mobility is an efficient technique to improve the laser-damage-resistance of TCO films based on maintaining their well electric conductivity.

  15. Dependence of photovoltages of spray-deposited indium tin oxide/silicon oxide/silicon junction solar cells on spray solvents

    NASA Astrophysics Data System (ADS)

    Ishida, T.; Kouno, H.; Kobayashi, H.; Nakato, Y.

    1994-05-01

    The photovoltages of spray-deposited indium tin oxide/silicon oxide/n-Si junction solar cells are found to depend strongly on the spray solvents such as methanol, ethanol, ethyl acetate, water, etc. It is also found that the work function of the indium tin oxide (ITO) films is dependent on the spray solvents, and the higher the work function of the ITO films, the larger the photovoltage. X-ray photoelectron spectroscopy (XPS) measurements indicate that an In-OH species, probably formed by reactions of the ITO film with the spray solvents, is present in the deposited film in cases where its work function is high. The resistivity of the ITO films produced using the organic spray solvents is in the range of 2 approx. 4 x 10(sup -4) Omega cm, leading to high fill factors of the solar cells, while that of the films deposited using water as a spray solvent is as high as 1.2 x 10(sup -3) Omega cm, resulting in low fill factors. On the basis of the XPS measurements, the high resistivity of the latter ITO films is attributed to a small amount of tin ions in the films. X-raydiffraction measurements show that the crystal orientation of the ITO films also depends on the spray solvents, indicating that the film formation mechanism varies with the spray solvents. By use of a mixed solvent of methanol:ethyl acetate:water = 5:5:1, the photovoltage becomes the highest, and the conversion efficiency of 14% is achieved.

  16. Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

    SciTech Connect

    Jagannadham, Kasichainula

    2015-05-15

    Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr{sub 2}N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W{sub 2}N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W{sub 2}N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films.

  17. Effect of Coating Thickness on the Properties of TiN Coatings Deposited on Tool Steels Using Cathodic Arc Pvd Technique

    NASA Astrophysics Data System (ADS)

    Mubarak, A.; Akhter, Parvez; Hamzah, Esah; Mohd Toff, Mohd Radzi Hj.; Qazi, Ishtiaq A.

    Titanium nitride (TiN) widely used as hard coating material, was coated on tool steels, namely on high-speed steel (HSS) and D2 tool steel by physical vapor deposition method. The study concentrated on cathodic arc physical vapor deposition (CAPVD), a technique used for the deposition of hard coatings for tooling applications, and which has many advantages. The main drawback of this technique, however, is the formation of macrodroplets (MDs) during deposition, resulting in films with rougher morphology. Various standard characterization techniques and equipment, such as electron microscopy, atomic force microscopy, hardness testing machine, scratch tester, and pin-on-disc machine, were used to analyze and quantify the following properties and parameters: surface morphology, thickness, hardness, adhesion, and coefficient of friction (COF) of the deposited coatings. Surface morphology revealed that the MDs produced during the etching stage, protruded through the TiN film, resulting in film with deteriorated surface features. Both coating thickness and indentation loads influenced the hardness of the deposited coatings. The coatings deposited on HSS exhibit better adhesion compared to those on D2 tool steel. Standard deviation indicates that the coating deposited with thickness around 6.7 μm showed the most stable trend of COF versus sliding distance.

  18. Experiments on In2S3:Sn Thin Films with up to 1% Tin Content

    NASA Astrophysics Data System (ADS)

    Kraini, M.; Bouguila, N.; Koaib, J.; Vázquez-Vázquez, C.; López-Quintela, M. A.; Alaya, S.

    2016-11-01

    Tin-doped indium sulfide (In2S3:Sn) thin films with different Sn:In molar ratios (0% to 1% by mol in solution) have been deposited on glass substrates by a chemical spray pyrolysis method. The films were investigated by x-ray diffraction analysis, optical absorption, Raman, and photoluminescence spectroscopies, field-emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, and atomic force microscopy. The structural properties revealed that the In2S3:Sn thin films had polycrystalline cubic structure with average crystallite size increasing from 16.3 nm to 25.5 nm. The surface morphology of the films was continuous and crack free. The average and root-mean-square roughness increased from 13.12 nm to 31.65 nm and from 16.14 nm to 39.39 nm, respectively, with increasing Sn:In molar ratio. Raman studies revealed the presence of vibration modes related to In2S3 phase, with no signature of secondary phases. The transmission coefficient was about 65% to 70% in the visible region and 70% to 90% in the near-infrared region. The optical bandgap values for allowed direct transitions in In2S3:Sn were found to lie in the range from 2.68 eV to 2.80 eV. The refractive index of the In2S3:Sn thin films decreased from 2.45 to 2.37 while the k values lay in the range from 0.02 to 0.25 for all wavelengths. Defect-related photoluminescence properties are also discussed. These In2S3:Sn films are promising candidates for use in optoelectronic and photovoltaic devices.

  19. Experiments on In2S3:Sn Thin Films with up to 1% Tin Content

    NASA Astrophysics Data System (ADS)

    Kraini, M.; Bouguila, N.; Koaib, J.; Vázquez-Vázquez, C.; López-Quintela, M. A.; Alaya, S.

    2016-08-01

    Tin-doped indium sulfide (In2S3:Sn) thin films with different Sn:In molar ratios (0% to 1% by mol in solution) have been deposited on glass substrates by a chemical spray pyrolysis method. The films were investigated by x-ray diffraction analysis, optical absorption, Raman, and photoluminescence spectroscopies, field-emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, and atomic force microscopy. The structural properties revealed that the In2S3:Sn thin films had polycrystalline cubic structure with average crystallite size increasing from 16.3 nm to 25.5 nm. The surface morphology of the films was continuous and crack free. The average and root-mean-square roughness increased from 13.12 nm to 31.65 nm and from 16.14 nm to 39.39 nm, respectively, with increasing Sn:In molar ratio. Raman studies revealed the presence of vibration modes related to In2S3 phase, with no signature of secondary phases. The transmission coefficient was about 65% to 70% in the visible region and 70% to 90% in the near-infrared region. The optical bandgap values for allowed direct transitions in In2S3:Sn were found to lie in the range from 2.68 eV to 2.80 eV. The refractive index of the In2S3:Sn thin films decreased from 2.45 to 2.37 while the k values lay in the range from 0.02 to 0.25 for all wavelengths. Defect-related photoluminescence properties are also discussed. These In2S3:Sn films are promising candidates for use in optoelectronic and photovoltaic devices.

  20. Surface and optical properties of indium tin oxide layer deposition by RF magnetron sputtering in argon atmosphere

    NASA Astrophysics Data System (ADS)

    Yudar, H. Hakan; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan; Pat, Suat

    2016-08-01

    This study focused on the characterization and properties of transparent and conductive indium tin oxide (ITO) thin films deposited in argon atmosphere. ITO thin films were coated onto glass substrates by radio frequency (RF) magnetron sputtering technique at 75 and 100 W RF powers. Structural characteristics of producing films were investigated through X-ray diffraction analysis. UV-Vis spectrophotometer and interferometer were used to determine transmittance, absorbance and reflectance values of samples. The surface morphology of the films was characterized by atomic force microscope. The calculated band gaps were 3.8 and 4.1 eV for the films at 75 and 100 W, respectively. The effect of RF power on crystallinity of prepared films was explored using mentioned analysis methods. The high RF power caused higher poly crystallinity in the produced samples. The thickness and refractive index values for all samples increased respect to an increment of RF power and were calculated as 20, 50 nm and 1.71, 1.86 for samples at 75 and 100 W, respectively. Finally, the estimated grain sizes for all prepared films decreased with increasing of 2 θ degrees, and the number of crystallite per unit volume was calculated. It was found that nearly all properties including sheet resistance and resistivity depend on the RF power.

  1. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  2. Physical Characterization and Effect of Effective Surface Area on the Sensing Properties of Tin Dioxide Thin Solid Films in a Propane Atmosphere

    PubMed Central

    Gómez-Pozos, Heberto; González-Vidal, José Luis; Torres, Gonzalo Alberto; de la Luz Olvera, María; Castañeda, Luis

    2014-01-01

    The physical properties and the effect of effective surface area (ESA) on the sensing properties of tin dioxide [SnO2] thin films in air and propane [C3H8] atmosphere as a function of operating temperature and gas concentration have been studied in this paper. SnO2 thin films with different estimated thicknesses (50, 100 and 200 nm) were deposited on glass substrates by the chemical spray technique. Besides, they were prepared at two different deposition temperatures (400 and 475 °C). Tin chloride [SnCl4 · 5H2O] with 0.2 M concentration value and ethanol [C2H6O] were used as tin precursor and solvent, respectively. The morphological, and structural properties of the as-prepared films were analyzed by AFM and XRD, respectively. Gas sensing characteristics of SnO2 thin solid films were measured at operating temperatures of 22, 100, 200, and 300 °C, and at propane concentration levels (0, 5, 50, 100, 200, 300, 400, and 500 ppm). ESA values were calculated for each sample. It was found that the ESA increased with the increasing thickness of the films. The results demonstrated the importance of the achieving of a large effective surface area for improving gas sensing performance. SnO2 thin films deposited by spray chemical were chosen to study the ESA effect on gas sensing properties because their very rough surfaces were appropriate for this application. PMID:24379046

  3. Electrodeposition and characterisation of lead tin superconducting films for application in heavy ion booster

    NASA Astrophysics Data System (ADS)

    Lobanov, Nikolai R.

    2015-12-01

    The ANU has developed experimental systems and procedures for lead-tin (PbSn) film deposition and characterisation. The 12 split loop resonators have been electroplated with 96%Pb4%Sn film to the final thickness of 1.5 micron using methanesulfonic acid (MSA) chemistry. As a result, an average acceleration field of 3.6 MV/m off-line at 6 W rf power was achieved at extremely low technological cost. Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Heavy Ion Elastic Detection Analyses (HIERDA), Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS) and Electron Backscattering Diffraction (EBSD) revealed correlation between the substrate and film structure, morphology and the rf performance of the cavity. The PbSn plating, exercised on the existing split loop resonators (SLR), has been extended to the two stub quarter wave resonator (QWR) as a straightforward step to quickly explore the superconducting performance of the new geometry. The oxygen free copper (OHFC) substrate for two stub QWR was prepared by reverse pulse electropolishing. The ultimate superconducting properties and long-term stability of the coatings have been assessed by operation of the ANU superconducting linac over the last few years.

  4. Rectifying properties of ZnO thin films deposited on FTO by electrodeposition technique

    NASA Astrophysics Data System (ADS)

    Lv, Jianguo; Sun, Yue; Zhao, Min; Cao, Li; Xu, Jiayuan; He, Gang; Zhang, Miao; Sun, Zhaoqi

    2016-03-01

    ZnO thin films were successfully grown on fluorine-doped tin oxide glass by electrodeposition technique. The crystal structure, surface morphology and optical properties of the thin films were investigated. The average crystallite size and intensity of A1(LO) mode increase with improving the absolute value of deposition potential. The best preferential orientation along c-axis and the richest oxygen interstitial defects have been observed in the sample deposited at -0.8 V. A heterojunction device consisting of ZnO thin film and n-type fluorine-doped tin oxide was fabricated. The current-voltage (I-V) characteristic of the p-n heterojunction device deposited at -0.8 V shows the best rectifying diode behavior. The p-type conductivity of the ZnO thin film could be attributed to complex defect of unintentional impurity and interstitial oxygen.

  5. Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

    NASA Astrophysics Data System (ADS)

    An, Hongyu; Wang, Jian; Szivos, Janos; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Safran, Gyorgy; Nakamura, Yoshio; Shi, Ji

    2015-11-01

    The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N2 into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L10 ordering transformation of CoPt.

  6. Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

    SciTech Connect

    An, Hongyu; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji; Wang, Jian; Szivos, Janos; Safran, Gyorgy

    2015-11-28

    The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N{sub 2} into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L1{sub 0} ordering transformation of CoPt.

  7. Nanoscale Investigation of Grain Growth in RF-Sputtered Indium Tin Oxide Thin Films by Scanning Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Lamsal, B. S.; Dubey, M.; Swaminathan, V.; Huh, Y.; Galipeau, D.; Qiao, Q.; Fan, Q. H.

    2014-11-01

    This work studied the electronic characteristics of the grains and grain boundaries of indium tin oxide (ITO) thin films using electrostatic and Kelvin probe force microscopy. Two types of ITO films were compared, deposited using radiofrequency magnetron sputtering in pure argon or 99% argon + 1% oxygen, respectively. The average grain size and surface roughness increased with substrate temperature for the films deposited in pure argon. With the addition of 1% oxygen, the increase in the grain size was inhibited above 150°C, which was suggested to be due to passivation of the grains by the excess oxygen. Electrostatic force microscopy and Kelvin probe force microscopy (KPFM) images confirmed that the grain growth was defect mediated and occurred at defective interfaces at high temperatures. Films deposited at room temperature with 1% oxygen showed crystalline nature, while films deposited with pure argon at room temperature were amorphous as observed from KPFM images. The potential drop across the grain and grain boundary was determined by taking surface potential line profiles to evaluate the electronic properties.

  8. Microstructural characteristics of tin oxide-based thin films on (0001) Al2O3 substrates: effects of substrate temperature and RF power during co-sputtering.

    PubMed

    Hwang, Sooyeon; Lee, Ju Ho; Kim, Young Yi; Yun, Myeong Goo; Lee, Kwan-Hun; Lee, Jeong Yong; Cho, Hyung Koun

    2014-12-01

    While tin oxides such as SnO and SnO2 are widely used in various applications, surprisingly, only a limited number of reports have been presented on the microstructural characteristics of tin oxide thin films grown under various growth conditions. In this paper, the effects of the substrate temperature and content of foreign Zn ion on the microstructural characteristics of tin oxide thin films grown by radio-frequency magnetron sputtering were investigated. The increase in substrate temperature induced change in the stoichiometry of the thin films from SnO(1+x) to SnO(2-x). Additionally, the phase contrast in the transmission electron microscopy image revealed that SnO(1+x) and SnO(2-x) phases were alternating in thin films and the width of each phase became narrower at high substrate temperature. The ternary zinc tin oxide thin films were deposited using the co-sputtering method. As the ZnO target power increased, the crystallinity of the thin films became poly-crystalline, and then showed improved crystallinity again with two types of phases. PMID:25970980

  9. High Mobility and Stability of Thin-Film Transistors Using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors

    NASA Astrophysics Data System (ADS)

    Seo, T. W.; Kim, Hyun-Suk; Lee, Kwang-Ho; Chung, Kwun-Bum; Park, Jin-Seong

    2014-09-01

    We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide ( a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.% Si) dramatically improved to 28.7 cm2/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm2/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements.

  10. Composition dependence of the photochemical reduction of Ag+ by as-grown Pb(ZrxTi1-x)O3 films on indium tin oxide electrode

    NASA Astrophysics Data System (ADS)

    Zhang, Man; Jiang, Chunxiang; Dong, Wen; Zheng, Fengang; Fang, Liang; Su, Xiaodong; Shen, Mingrong

    2013-09-01

    Photochemical growth of metal particles on ferroelectric films has usually been found to depend on polarization effect solely. This research exploits the interplay of the film/electrode interface barrier and depolarization field on the photoreduction of Ag+ to Ag onto Pb(Zr,Ti)O3 (PZT) films deposited on indium tin oxide (ITO) electrodes. Ag nanoparticles are observed on the as-grown polycrystalline PZT films without poling, while the particle size and density are closely related to the concentration of Zr in PZT and the poling direction. The enhancement on the photoelectrochemical properties of the ITO/PZT photocathode by the decoration of Ag nanoparticles is finally demonstrated.

  11. Reversible wettability of electron-beam deposited indium-tin-oxide driven by ns-UV irradiation

    SciTech Connect

    Persano, Luana; Del Carro, Pompilio; Pisignano, Dario

    2012-04-09

    Indium tin oxide (ITO) is one of the most widely used semiconductor oxides in the field of organic optoelectronics, especially for the realization of anode contacts. Here the authors report on the control of the wettability properties of ITO films deposited by reactive electron beam deposition and irradiated by means of nanosecond-pulsed UV irradiation. The enhancement of the surface water wettability, with a reduction of the water contact angle larger than 50 deg., is achieved by few tens of seconds of irradiation. The analyzed photo-induced wettability change is fully reversible in agreement with a surface-defect model, and it can be exploited to realize optically transparent, conductive surfaces with controllable wetting properties for sensors and microfluidic circuits.

  12. Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristics

    NASA Astrophysics Data System (ADS)

    Zhang, Jiawei; Kong, Xi; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Liu, Jie; Xin, Qian; Wang, Qingpu; Song, Aimin

    2016-06-01

    Tin monoxide (SnO) has drawn much attention in recent years due to its high hole mobility, transparency, and potential for mass production. However, due to its metastable nature, the deposited film often contains multi-phases such as metallic tin and tin dioxide, which may degrade its electrical properties. Here, we presented the temperature dependent characteristics of p-type SnO thin-film transistors. The hole transport mechanism is dominated by band conduction at high temperatures and variable-range hopping at low temperatures. The maximum activation energy was found to be 308 meV, which denotes a bandgap of around 0.6 eV. The density of states was found to be 1.12 × 1021 cm-3 eV-1 at VG = -80 V, and 6.75 × 1020 cm-3 eV-1 at VG = 0 V, respectively.

  13. Hydroxyapatite thin films grown by pulsed laser deposition and radio-frequency magnetron sputtering: comparative study

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Morosanu, C.; Iliescu, M.; Mihailescu, I. N.

    2004-04-01

    Hydroxyapatite (HA) thin films for applications in the biomedical field were grown by pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (RF-MS) techniques. The depositions were performed from pure hydroxyapatite targets on Ti-5Al-2.5Fe (TiAlFe) alloys substrates. In order to prevent the HA film penetration by Ti atoms or ions diffused from the Ti-based alloy during and after deposition, the substrates were pre-coated with a thin buffer layer of TiN. In both cases, TiN was introduced by reactive PLD from TiN targets in low-pressure N 2. The PLD films were grown in vacuum onto room temperature substrates. The RF-MS films were deposited in low-pressure argon on substrates heated at 550 °C. The initially amorphous PLD thin films were annealed at 550 °C for 1 h in ambient air in order to restore the initial crystalline structure of HA target. The thickness of the PLD and RF-MS films were ˜1 μm and ˜350 nm, respectively. All films were structurally studied by scanning electron microscopy (SEM), grazing incidence X-ray diffraction (GIXRD), energy dispersive X-ray spectrometry (EDS) and white light confocal microscopy (WLCM). The mechanical properties of the films were tested by Berkovich nano-indentation. Both PLD and RF-MS films mostly contain HA phase and exhibit good mechanical characteristics. Peaks of CaO were noticed as secondary phase in the GIXRD patterns only for RF-MS films. By its turn, the sputtered films were smoother as compared to the ones deposited by PLD (50 nm versus 250 nm average roughness). The RF-MS films were harder, more mechanically resistant and have a higher Young modulus.

  14. High Temperature - Thin Film Strain Gages Based on Alloys of Indium Tin Oxide

    NASA Technical Reports Server (NTRS)

    Gregory, Otto J.; Cooke, James D.; Bienkiewicz, Joseph M.

    1998-01-01

    A stable, high temperature strain gage based on reactively sputtered indium tin oxide (ITO) was demonstrated at temperatures up to 1050 C. These strain sensors exhibited relatively large, negative gage factors at room temperature and their piezoresistive response was both linear and reproducible when strained up to 700 micro-in/in. When cycled between compression and tension, these sensors also showed very little hysteresis, indicating excellent mechanical stability. Thin film strain gages based on selected ITO alloys withstood more than 50,000 strain cycles of +/- 500 micro-in/in during 180 hours of testing in air at 1000 C, with minimal drift at temperature. Drift rates as low as 0.0009%/hr at 1000 C were observed for ITO films that were annealed in nitrogen at 700 C prior to strain testing. These results compare favorably with state of the art 10 micro-m thick PdCr films deposited by NASA, where drift rates of 0.047%/hr at 1050 C were observed. Nitrogen annealing not only produced the lowest drift rates to date, but also produce the largest dynamic gage factors (G = 23.5). These wide bandgap, semiconductor strain sensors also exhibited moderately low temperature coefficients of resistance (TCR) at temperatures up to 1100 C, when tested in a nitrogen ambient. A TCR of +230 ppm/C over the temperature range 200 C < T < 500 C and a TCR of -469 ppm/C over the temperature range 600 C < T < 1100 C was observed for the films tested in nitrogen. However, the resistivity behavior changed considerably when the same films were tested in oxygen ambients. A TCR of -1560 ppm/C was obtained over the temperature range of 200 C < T < 1100 C. When similar films were protected with an overcoat or when ITO films were prepared with higher oxygen contents in the plasma, two distinct TCR's were observed. At T < 800 C, a linear TCR of -210 ppm/C was observed and at T > 800 C, a linear TCR of -2170 DDm/C was observed. The combination of a moderately low TCR and a relatively large gage

  15. Depositing Adherent Ag Films On Ti Films On Alumina

    NASA Technical Reports Server (NTRS)

    Honecy, Frank S.

    1995-01-01

    Report discusses cleaning of ceramic (principally, alumina) substrates in preparation for sputter deposition of titanium intermediate films on substrates followed by sputter deposition of outer silver films. Principal intended application, substrates sliding parts in advanced high-temperature heat engines, and outer silver films serve as solid lubricants: lubricating properties described in "Solid Lubricant for Alumina" (LEW-15495).

  16. Electrochemical deposition of conductive and adhesive polypyrrole-dopamine films.

    PubMed

    Kim, Semin; Jang, Lindy K; Park, Hyun S; Lee, Jae Young

    2016-01-01

    Electrode surfaces have been widely modified with electrically conductive polymers, including polypyrrole (PPY), to improve the performance of electrodes. To utilize conductive polymers for electrode modification, strong adhesion between the polymer films and electrode substrates should be ensured with high electrical/electrochemical activities. In this study, PPY films were electrochemically polymerized on electrodes (e.g., indium tin oxide (ITO)) with dopamine as a bio-inspired adhesive molecule. Efficient and fast PPY electrodeposition with dopamine (PDA/PPY) was found; the resultant PDA/PPY films exhibited greatly increased adhesion strengths of up to 3.7 ± 0.8 MPa and the modified electrodes had electrochemical impedances two to three orders of magnitude lower than that of an unmodified electrode. This electrochemical deposition of adhesive and conductive PDA/PPY offers a facile and versatile electrode modification for various applications, such as biosensors and batteries.

  17. Electrochemical deposition of conductive and adhesive polypyrrole-dopamine films

    PubMed Central

    Kim, Semin; Jang, Lindy K.; Park, Hyun S.; Lee, Jae Young

    2016-01-01

    Electrode surfaces have been widely modified with electrically conductive polymers, including polypyrrole (PPY), to improve the performance of electrodes. To utilize conductive polymers for electrode modification, strong adhesion between the polymer films and electrode substrates should be ensured with high electrical/electrochemical activities. In this study, PPY films were electrochemically polymerized on electrodes (e.g., indium tin oxide (ITO)) with dopamine as a bio-inspired adhesive molecule. Efficient and fast PPY electrodeposition with dopamine (PDA/PPY) was found; the resultant PDA/PPY films exhibited greatly increased adhesion strengths of up to 3.7 ± 0.8 MPa and the modified electrodes had electrochemical impedances two to three orders of magnitude lower than that of an unmodified electrode. This electrochemical deposition of adhesive and conductive PDA/PPY offers a facile and versatile electrode modification for various applications, such as biosensors and batteries. PMID:27459901

  18. Electrochemical deposition of conductive and adhesive polypyrrole-dopamine films.

    PubMed

    Kim, Semin; Jang, Lindy K; Park, Hyun S; Lee, Jae Young

    2016-01-01

    Electrode surfaces have been widely modified with electrically conductive polymers, including polypyrrole (PPY), to improve the performance of electrodes. To utilize conductive polymers for electrode modification, strong adhesion between the polymer films and electrode substrates should be ensured with high electrical/electrochemical activities. In this study, PPY films were electrochemically polymerized on electrodes (e.g., indium tin oxide (ITO)) with dopamine as a bio-inspired adhesive molecule. Efficient and fast PPY electrodeposition with dopamine (PDA/PPY) was found; the resultant PDA/PPY films exhibited greatly increased adhesion strengths of up to 3.7 ± 0.8 MPa and the modified electrodes had electrochemical impedances two to three orders of magnitude lower than that of an unmodified electrode. This electrochemical deposition of adhesive and conductive PDA/PPY offers a facile and versatile electrode modification for various applications, such as biosensors and batteries. PMID:27459901

  19. Electrochemical deposition of conductive and adhesive polypyrrole-dopamine films

    NASA Astrophysics Data System (ADS)

    Kim, Semin; Jang, Lindy K.; Park, Hyun S.; Lee, Jae Young

    2016-07-01

    Electrode surfaces have been widely modified with electrically conductive polymers, including polypyrrole (PPY), to improve the performance of electrodes. To utilize conductive polymers for electrode modification, strong adhesion between the polymer films and electrode substrates should be ensured with high electrical/electrochemical activities. In this study, PPY films were electrochemically polymerized on electrodes (e.g., indium tin oxide (ITO)) with dopamine as a bio-inspired adhesive molecule. Efficient and fast PPY electrodeposition with dopamine (PDA/PPY) was found; the resultant PDA/PPY films exhibited greatly increased adhesion strengths of up to 3.7 ± 0.8 MPa and the modified electrodes had electrochemical impedances two to three orders of magnitude lower than that of an unmodified electrode. This electrochemical deposition of adhesive and conductive PDA/PPY offers a facile and versatile electrode modification for various applications, such as biosensors and batteries.

  20. Improved oxygen diffusion barrier properties of ruthenium-titanium nitride thin films prepared by plasma-enhanced atomic layer deposition.

    PubMed

    Jeong, Seong-Jun; Kim, Doo-In; Kim, Sang Ouk; Han, Tae Hee; Kwon, Jung-Dae; Park, Jin-Seong; Kwon, Se-Hun

    2011-01-01

    Ru-TiN thin films were prepared from bis(ethylcyclopentadienyl)ruthenium and tetrakis(dimethylamino)titanium using plasma-enhanced atomic layer deposition (PEALD). The Ru and TiN were deposited sequentially to intermix TiN with Ru. The composition of Ru-TiN films was controlled precisely by changing the number of deposition cycles allocated to Ru, while fixing the number of deposition cycles allocated to TiN. Although both Ru and TiN thin films have a polycrystalline structure, the microstructure of the Ru-TiN films changed from a TiN-like polycrystalline structure to a nanocrystalline on increasing the Ru intermixing ratio. Moreover, the electrical resistivity of the Ru0.67-TiN0.33 thin films is sufficiently low at 190 microomega x cm and was maintained even after O2 annealing at 750 degrees C. Therefore, Ru-TiN thin films can be utilized as a oxygen diffusion barrier material for future dynamic (DRAM) and ferroelectric (FeRAM) random access memory capacitors.

  1. Influence of defects and processing parameters on the properties of indium tin oxide films on polyethylene napthalate substrate

    SciTech Connect

    Han, H.; Zoo, Yeongseok; Bhagat, S. K.; Lewis, J. S.; Alford, T. L.

    2007-09-15

    Indium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100 deg. C). Selected PEN substrates were pretreated using an Ar plasma before ITO sputter deposition. Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electrical and optical properties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

  2. Low temperature atmospheric pressure chemical vapor deposition of group 14 oxide films

    SciTech Connect

    Hoffman, D.M.; Atagi, L.M. |; Chu, Wei-Kan; Liu, Jia-Rui; Zheng, Zongshuang; Rubiano, R.R.; Springer, R.W.; Smith, D.C.

    1994-06-01

    Depositions of high quality SiO{sub 2} and SnO{sub 2} films from the reaction of homoleptic amido precursors M(NMe{sub 2})4 (M = Si,Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 {plus_minus} 5 atom %. They are deposited with growth rates from 380 to 900 {angstrom}/min. The refractive indexes of the SiO{sub 2} films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm{sup {minus}1}. X-Ray diffraction studies reveal that the SiO{sub 2} film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO{sub 2} films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10{sup {minus}2} to 10{sup {minus}3} {Omega}cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.

  3. Influence of high power impulse magnetron sputtering plasma ionization on the microstructure of TiN thin films

    SciTech Connect

    Ehiasarian, A. P.; Vetushka, A.; Gonzalvo, Y. Aranda; Safran, G.; Szekely, L.; Barna, P. B.

    2011-05-15

    HIPIMS (High Power Impulse Magnetron Sputtering) discharge is a new PVD technology for the deposition of high-quality thin films. The deposition flux contains a high degree of metal ionization and nitrogen dissociation. The microstructure of HIPIMS-deposited nitride films is denser compared to conventional sputter technologies. However, the mechanisms acting on the microstructure, texture and properties have not been discussed in detail so far. In this study, the growth of TiN by HIPIMS of Ti in mixed Ar and N{sub 2} atmosphere has been investigated. Varying degrees of metal ionization and nitrogen dissociation were produced by increasing the peak discharge current (I{sub d}) from 5 to 30 A. The average power was maintained constant by adjusting the frequency. Mass spectrometry measurements of the deposition flux revealed a high content of ionized film-forming species, such as Ti{sup 1+}, Ti{sup 2+} and atomic nitrogen N{sup 1+}. Ti{sup 1+} ions with energies up to 50 eV were detected during the pulse with reducing energy in the pulse-off times. Langmuir probe measurements showed that the peak plasma density during the pulse was 3 x 10{sup 16} m{sup -3}. Plasma density, and ion flux ratios of N{sup 1+}: N{sub 2}{sup 1+} and Ti{sup 1+}: Ti{sup 0} increased linearly with peak current. The ratios exceeded 1 at 30 A. TiN films deposited by HIPIMS were analyzed by X-ray diffraction, and transmission electron microscopy. At high I{sub d}, N{sup 1+}: N{sub 2}{sup 1+} > 1 and Ti{sup 1+}: Ti{sup 0} > 1 were produced; a strong 002 texture was present and column boundaries in the films were atomically tight. As I{sub d} reduced and N{sup 1+}: N{sub 2}{sup 1+} and Ti{sup 1+}: Ti{sup 0} dropped below 1, the film texture switched to strong 111 with a dense structure. At very low I{sub d}, porosity between columns developed. The effects of the significant activation of the deposition flux observed in the HIPIMS discharge on the film texture, microstructure, morphology and

  4. Chemical-Vapor-Deposited Diamond Film

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    This chapter describes the nature of clean and contaminated diamond surfaces, Chemical-vapor-deposited (CVD) diamond film deposition technology, analytical techniques and the results of research on CVD diamond films, and the general properties of CVD diamond films. Further, it describes the friction and wear properties of CVD diamond films in the atmosphere, in a controlled nitrogen environment, and in an ultra-high-vacuum environment.

  5. Effect of gas ratio on tribological properties of sputter deposited TiN coatings

    NASA Astrophysics Data System (ADS)

    Chavda, Mahesh R.; Chauhan, Kamlesh V.; Rawal, Sushant K.

    2016-05-01

    Titanium nitride (TiN) coatings were deposited on Si, corning glass, pins of mild steel (MS, ϕ3mm), aluminium (Al, ϕ4mm) and brass (ϕ6mm) substratesby DC magnetron sputtering. The argon and nitrogen (Ar:N2)gas ratio was precisely controlled by Mass Flow Controller (MFC) and was varied systematically at diffract values of 10:10,12:08, 16:04 and 18:02sccm. The structural properties of TiN coatings were characterized by X-ray diffraction (XRD) and its surface topography was studied using field emission scanning electron microscopy (FE-SEM). The tribological properties of TiN coatings were investigated using pin-on-disc tribometer.

  6. Structural characterization and electronic structure of laser treated TiN thin film

    SciTech Connect

    Soni, Sheetal; Nair, K. G. M.; Phase, D. M.; Gupta, Ratnesh

    2012-06-05

    TiN thin films prepared by laser treatment using Kr-F excimer laser in the controlled atmosphere. The depth distribution and composition of nitrogen and contaminated oxygen have been determined by non-Rutherford proton backscattering using 1.7 MeV Tendetron accelerator. The electronic structure of TiN thin film have been characterized by resonant photoelectron spectroscopy using indus-I synchrotron radiation. Specifically, complex resonance profile that shows the enhancement at 45 eV which is consistent with the resonant photoemission of Ti 3d states involved in the Titanium nitride and oxide.

  7. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping. PMID:25970986

  8. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping.

  9. Laser-induced damage to spray pyrolysis deposited transparent conducting films

    NASA Astrophysics Data System (ADS)

    Radhakrishnan, P.; Sathianandan, K.; Subhash, N.

    1986-02-01

    Laser-induced damage study of transparent conducting coatings of tin oxide prepared by spray pyrolysis has been made using a dye Q-switched Nd:glass laser emitting 25-ns (FWHM) pulses at 1062 nm. For comparison tin oxide films prepared by the chemical vapor deposition (CVD) method and indium tin oxide (ITO) prepared by the reactive RF sputtering method have also been damage tested. The study reveals that the spray pyrolysis method yields good electrical and optical quality films with a damage threshold value of 5.2 + or - 0.3 J/sq cm. Though CVD technique provides the highest damage threshold coatings (14.2 + or - 0.6 J/sq cm), their electrical characteristics and uniformity are inferior to RF-sputtered ITO films which have the best electrical properties and the lowest damage threshold values (1.3 + or - 0.1 J/sq cm).

  10. Tin nanoparticle thin film electrodes fabricated by the vacuum filtration method for enhanced battery performance.

    PubMed

    Lee, Jae Hyun; Kong, Byung-Seon; Baek, Youn-Kyoung; Yang, Seung Bo; Jung, Hee-Tae

    2009-06-10

    A novel method for fabricating tin nanoparticle thin film electrodes that show good performance in lithium ion batteries during cycling is reported. The vacuum filtration method has the advantage of affording a high degree of dispersion of the electrode components, thereby providing good electrical contacts between the tin nanoparticles and the conductive carbon or current collector. The reversible capacity and initial Coulombic efficiency are 726 mA h g(-1) and 85.3%, respectively, with this thin film electrode. Cycle life performance tests under real battery conditions show that the battery capacity and reaction peaks remained stable for up to 50 cycles. SEM shows that the uniform morphology of the vacuum filtered film was maintained throughout the cycle life test. This novel vacuum filtration method for providing nanoparticle-based film electrodes has further potential applications for use in various devices such as high power, thin film batteries, supercapacitors and organic-inorganic hybrid photovoltaic cells.

  11. Pulsed laser deposition: Prospects for commercial deposition of epitaxial films

    SciTech Connect

    Muenchausen, R.E.

    1999-03-01

    Pulsed laser deposition (PLD) is a physical vapor deposition (PVD) technique for the deposition of thin films. The vapor source is induced by the flash evaporation that occurs when a laser pulse of sufficient intensity (about 100 MW/cm{sup 2}) is absorbed by a target. In this paper the author briefly defines pulsed laser deposition, current applications, research directed at gaining a better understanding of the pulsed laser deposition process, and suggests some future directions to enable commercial applications.

  12. Mirrorlike pulsed laser deposited tungsten thin film

    SciTech Connect

    Mostako, A. T. T.; Khare, Alika; Rao, C. V. S.

    2011-01-15

    Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10{sup -5} Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness {approx}782 nm.

  13. Mirrorlike pulsed laser deposited tungsten thin film.

    PubMed

    Mostako, A T T; Rao, C V S; Khare, Alika

    2011-01-01

    Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10(-5) Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness ∼782 nm. PMID:21280810

  14. Morphology of Imidazolium-Based Ionic Liquids as Deposited by Vapor Deposition: Micro-/Nanodroplets and Thin Films.

    PubMed

    Costa, José C S; Mendes, Adélio; Santos, Luís M N B F

    2016-07-18

    The morphology of micro- and nanodroplets and thin films of ionic liquids (ILs) prepared through physical vapor deposition is presented. The morphology of droplets deposited on indium-tin-oxide-coated glass is presented for the extended 1-alkyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([Cn C1 im][Ntf2 ]; n=1-8) series, and the results show the nanostructuration of ILs. The use of in-vacuum energetic particles enhances/increases the nanodroplets mobility/coalescence mechanisms and can be a pathway to the fabrication of thin IL films. PMID:27028765

  15. The effect of sorbitol on the morphological characteristics of lead-tin films electrodeposited from an alkaline bath

    NASA Astrophysics Data System (ADS)

    Siqueira, J. L. P.; Carlos, I. A.

    An alkaline Pb-Sn plating bath containing sorbitol as additive has been developed, which has the advantage of low toxicity and ease of handling relative to fluoborate baths, etc. The Pb-Sn deposition voltammetric curve from this bath revealed two deposition processes, at -0.87 and -1.17 V. The voltammetric studies at various sweep rates indicate that the Pb-Sn deposition process is controlled by mass transport. The joint diffusion coefficient of the Pb(II) and Sn(II) sorbitate complex species is 1.15 × 10 -6 cm 2 s -1. SEM analysis showed that the films produced at -0.87 and -1.17 V are, respectively, composed of dendritic or hexagonal crystals, showing that co-deposition of tin hindered dendritic growth. EDS of the Pb-Sn films showed that the deposit obtained at -0.87 V is pure lead, while that at -1.17 V, with 5.0 or 10.0 C cm -2, has 19.10 wt% Sn or 26.35 wt% Sn, respectively. It was observed that the Pb-Sn electrodeposited films were grey at both deposition potentials (-0.87 and -1.17 V) and deposition charges (5.0 and 10.0 C cm -2). X-ray spectra showed that at the potential -0.87 V a mixture of Pb, PbPt 4 and Pb 2PtO 4 were deposited, while at -1.17 V, Pb, β-Sn, and PbSnO 3 were deposited.

  16. Tin-tungsten mineralizing processes in tungsten vein deposits: Panasqueira, Portugal

    NASA Astrophysics Data System (ADS)

    Lecumberri-Sanchez, P.; Pinto, F.; Vieira, R.; Wälle, M.; Heinrich, C. A.

    2015-12-01

    Tungsten has a high heat resistance, density and hardness, which makes it widely applied in industry (e.g. steel, tungsten carbides). Tungsten deposits are typically magmatic-hydrothermal systems. Despite the economic significance of tungsten, there are no modern quantitative analytical studies of the fluids responsible for the formation of its highest-grade deposit type (tungsten vein deposits). Panasqueira (Portugal) is a tungsten vein deposit, one of the leading tungsten producers in Europe and one of the best geologically characterized tungsten vein deposits. In this study, compositions of the mineralizing fluids at Panasqueira have been determined through combination of detailed petrography, microthermometric measurements and LA-ICPMS analyses, and geochemical modeling has been used to determine the processes that lead to tungsten mineralization. We characterized the fluids related to the various mineralizing stages in the system: the oxide stage (tin and tungsten mineralization), the sulfide stage (chalcopyrite and sphalerite mineralization) and the carbonate stage. Thus, our results provide information on the properties of fluids related with specific paragenetic stages. Furthermore we used those fluid compositions in combination with host rock mineralogy and chemistry to evaluate which are the controlling factors in the mineralizing process. This study provides the first quantitative analytical data on fluid composition for tungsten vein deposits and evaluates the controlling mineralization processes helping to determine the mechanisms of formation of the Panasqueira tin-tungsten deposit and providing additional geochemical constraints on the local distribution of mineralization.

  17. Surface enhanced Raman scattering activity of TiN thin film prepared via nitridation of sol-gel derived TiO2 film

    NASA Astrophysics Data System (ADS)

    Dong, Zhanliang; Wei, Hengyong; Chen, Ying; Wang, Ruisheng; Zhao, Junhong; Lin, Jian; Bu, Jinglong; Wei, Yingna; Cui, Yi; Yu, Yun

    2015-10-01

    Surface-enhanced Raman scattering (SERS) is a powerful and non-destructive analytical technique tool for chemical and biological sensing applications. Metal-free SERS substrates have recently been developed by using semiconductor nanostructures. The optical property of TiN film is similar to that of gold. Besides that, its good chemical inertness and thermodynamic stability make TiN thin film an excellent candidate for SERS. In order to investigate its SERS activity, the TiN thin film was successfully prepared via direct nitridation of the sol-gel derived TiO2 thin film on the quartz substrate using ammonia gas as reducing agent. The crystallite structures and morphology of TiN thin film were determined by XRD, RAMAN and FE-SEM. The results show that the thin film obtained is cubic titanium nitride with a lattice parameter of 4.2349 Å. The surface of TiN thin film is rough and with the particles of 50 nm in average sizes. The thickness of TiN thin film is about 130 nm. The TiN thin film displays a surface Plasmon resonance absorption peak at around 476 nm, which can lead to a strong enhancement of the EM field on the interface. The Raman signal of the probe molecule R6G was greatly enhanced through TiN thin film substrates. The enhancement factor is about 4.1×103 and the detection limit achieves 10-6 M for R6G. The TiN thin film substrate also shows a good reproducibility of SERS performance. The results indicate that TiN thin film is an attractive material with potential application in SERS substrates.

  18. Properties of Transparent Zinc-Tin Oxide Conducting Films Prepared by Chemical Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Martinez, Arturo I.; Garcia, Benjamin A.; Acosta, Dwight R.

    2005-06-01

    In this work we have prepared thin films of zinc-tin oxide by the chemical spray pyrolysis method. The structural, electrical and optical properties were studied for all films as a function of the zinc content in the starting solution, yielding values of electrical resistivity (ρ), Hall mobility (μ), carrier concentration (n), and optical transmission (T) suitable for optoelectronic applications, e.g. our optimal values were ρ = 3.56×10-2 Ω cm and T = 0.77.

  19. Polymer-assisted deposition of films

    DOEpatents

    McCleskey, Thomas M.; Burrell, Anthony K.; Jia, Quanxi; Lin, Yuan

    2008-04-29

    A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  20. Polymer-assisted deposition of films

    DOEpatents

    McCleskey, Thomas M.; Burrell; Anthony K.; Jia; Quanxi; Lin; Yuan

    2009-10-20

    A polymer assisted deposition process for deposition of metal oxide films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films and the like. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  1. Defect engineered d{sup 0} ferromagnetism in tin-doped indium oxide nanostructures and nanocrystalline thin-films

    SciTech Connect

    Khan, Gobinda Gopal E-mail: sghoshphysics@gmail.com; Sarkar, Ayan; Ghosh, Shyamsundar E-mail: sghoshphysics@gmail.com; Mandal, Guruprasad; Mukherjee, Goutam Dev; Manju, Unnikrishnan; Banu, Nasrin; Dev, Bhupendra Nath

    2015-08-21

    Origin of unexpected defect engineered room-temperature ferromagnetism observed in tin-doped indium oxide (ITO) nanostructures (Nanowires, Nano-combs) and nanocrystalline thin films fabricated by pulsed laser deposition has been investigated. It is found that the ITO nanostructures prepared under argon environment exhibit strongest ferromagnetic signature as compared to that nanocrystalline thin films grown at oxygen. The evidence of singly ionized oxygen vacancy (V{sub 0}{sup +}) defects, obtained from various spectroscopic measurements, suggests that such V{sub 0}{sup +} defects are mainly responsible for the intrinsic ferromagnetic ordering. The exchange interaction of the defects provides extensive opportunity to tune the room-temperature d{sup 0} ferromagnetism and optical properties of ITOs.

  2. Observation of deviation of electronic behaviour of indium tin oxide film at grain boundary using Scanning Tunneling Microscope

    NASA Astrophysics Data System (ADS)

    Kasiviswanathan, S.; Srinivas, V.; Kar, A. K.; Mathur, B. K.; Chopra, K. L.

    1997-03-01

    Scanning Tunneling Microscopy and Spectroscopy investigations have been carried out on electron beam deposited indium tin oxide films. The STM images reveal a rather smooth surface, which appears to have been formed due to the coalescence of islands with different shapes. The spectroscopic data, in general, exhibit characteristics typical of metal-insulator-semiconductor structures, with a heavily doped semiconductor. From the I- V curves, a band gap of ≈3.5 eV is obtained, which is very close to the bulk value. The I- V studies at some grain boundary interfaces suggest the presence of regions showing electronic characteristics, that differ significantly from what is observed on the rest of the film surface.

  3. The Tribological Behaviors of Three Films Coated on Biomedical Titanium Alloy by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Wang, Song; Liao, Zhenhua; Liu, Yuhong; Liu, Weiqiang

    2015-11-01

    Three thin films (DLC, a-C, and TiN) were performed on Ti6Al4V by chemical vapor deposition. Carbon ion implantation was pretreated for DLC and a-C films while Ti transition layer was pretreated for TiN film to strengthen the bonding strength. X-ray diffraction, Raman measurement, nano-hardness and nano-scratch tester, and cross-section etching by FIB method were used to analyze film characteristics. Tribological behaviors of these coatings were studied by articulation with both ZrO2 and UHMWPE balls using ball-on-disk sliding. The thickness values reached ~0.46, ~0.33, and ~1.67 μm for DLC, a-C, and TiN film, respectively. Nano-hardness of the coatings compared with that of untreated and bonding strength (critical load in nano-scratch test) values of composite coatings compared with that of monolayer film all increased significantly, respectively. Under destructive test (ZrO2 ball conterface) in bovine serum lubrication, TiN coating revealed the best wear resistance while DLC showed the worst. Film failure was mainly attributed to the plowing by hard ZrO2 ball characterized by abrasive and adhesive wear. Under normal test (UHMWPE ball conterface), all coatings showed significant improvement in wear resistance both in dry sliding and bovine serum lubrication. Both DLC and a-C films showed less surface damage than TiN film due to the self-lubricating phenomenon in dry sliding. TiN film showed the largest friction coefficient both in destructive and normal tests, devoting to the big TiN grains thus leading to much rougher surface and then a higher value. The self-lubricating film formed on DLC and a-C coating could also decrease their friction coefficients. The results indicated that three coatings revealed different wear mechanisms, and thick DLC or a-C film was more promising in application in lower stress conditions such as artificial cervical disk.

  4. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect

    Hu, W.; Peterson, R. L.

    2014-05-12

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  5. Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Juneja, Sucheta; Poletayev, Sergey D.; Fomchenkov, Sergey; Khonina, Svetlana N.; Skidanov, Roman V.; Kazanskiy, Nikolay L.

    2016-08-01

    Indium tin oxide (ITO) films have been a subject of extensive studies in fabrication of micro-electronic devices for opto-electronic applications ranging from anti-reflection coatings to transparent contacts in photovoltaic devices. In this paper, a new and effective way of reactive ion etching of a conducting indium-tin oxide (ITO) film with Carbon tetrachloride (CCl4) has been investigated. CCl4 plasma containing an addition of gases mixture of dissociated argon and oxygen were used. Oxygen is added to increase the etchant percentage whereas argon was used for stabilization of plasma. The etching characteristics obtained with these gaseous mixtures were explained based on plasma etch chemistry and etching regime of ITO films. An etch rate as high as ∼20 nm/min can be achieved with a controlled process parameter such as power density, total flow rate, composition of reactive gases gas and pressure. Our Investigation represents some of the extensive work in this area.

  6. Properties of TiAlN coating deposited by MPIIID on TiN substrates

    NASA Astrophysics Data System (ADS)

    El-Hossary, F. M.; Abd El-Rahman, A. M.; Raaif, M.; Ghareeb, D. A.

    2016-03-01

    Metal plasma immersion ion implantation and deposition (MPIIID) is employed to produce TiAlN hard coatings on Ti substrate. To improve the load-bearing capacity of Ti substrate, nitrogen PIII is used to prepare a bearing TiN layer on Ti-base substrate. The MPIIID process is performed using Ti50:Al50 target for different nitrogen/argon gas fractions. The effect of N2/Ar gas ratio on the microstructure, mechanical and tribological properties of TiAlN coatings has been studied. The plastic microhardness of TiAlN increases with increasing the nitrogen gas fraction to reach a maximum value of 30 GPa at 100 % N2. The plasticity index and the resistance to plastic deformation increase with increasing the nitrogen gas fraction. The wear volume loss of TiAlN coating deposited on TiN substrate decreases by a factor of 103 in comparison with pure Ti. Moreover, the friction coefficient decreases from nearly 0.8 for Ti to 0.25 for TiAlN coatings. The enhanced mechanical and tribological properties of the coating are correlated with the formation of TiAlN hard phase. This phase has random-oriented microstructure, finer grain size, high oxidation resistance and residual internal stress. Moreover, the TiN interface acts as a barrier for the motion of dislocations.

  7. Deposition of thin films of multicomponent materials

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor)

    1993-01-01

    Composite films of multicomponent materials, such as oxides and nitrides, e.g., lead zirconate titanate, are deposited by dc magnetron sputtering, employing a rotating substrate holder, which rotates relative to a plurality of targets, one target for each metal element of the multicomponent material. The sputtering is carried out in a reactive atmosphere. The substrates on which the layers are deposited are at ambient temperature. Following deposition of the composite film, the film is heated to a temperature sufficient to initiate a solid state reaction and form the final product, which is substantially single phase and substantially homogeneous.

  8. Surface Analysis of Stressed and Control Tin Oxide Thin Films on Soda Lime Glass

    SciTech Connect

    Pankow, J. W.

    2003-05-01

    Surface analysis techniques have been used to investigate tin oxide-coated soda lime glass specimens prior and subsequent to their exposure to DC bias, heat, and humidity. All specimens reported here comprise the following layered structure: tin oxide/silicon oxycarbide/glass. Depth profiling using X-ray photoelectron spectroscopy (XPS) clearly shows the interfacial regions in both control samples and samples exposed to the above-mentioned conditions (stressed). Control samples show distinct and relatively compact interfacial regions as well as an intact silicon oxycarbide diffusion barrier. Stressed films, however, show more diffuse interfacial regions and a physically and chemically altered silicon oxycarbide diffusion barrier. This deterioration of the diffusion barrier is proposed to be a pre-requisite event to enable tin oxide delamination.

  9. Physicochemical characterization of point defects in fluorine doped tin oxide films

    SciTech Connect

    El Akkad, Fikry; Joseph, Sudeep

    2012-07-15

    The physical and chemical properties of spray deposited FTO films are studied using FESEM, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), electrical and optical measurements. The results of XRD measurements showed that the films are polycrystalline (grain size 20-50 nm) with Rutile structure and mixed preferred orientation along the (200) and (110) planes. An angular shift of the XRD peaks after F-doping is observed and interpreted as being due to the formation of substitutional fluorine defects (F{sub O}) in presence of high concentration of oxygen vacancies (V{sub O}) that are electrically neutral. The electrical neutrality of oxygen vacancies is supported by the observation that the electron concentration n is two orders of magnitude lower than the V{sub O} concentration calculated from chemical analyses using XPS measurements. It is shown that an agreement between XPS, XRD, and Hall effect results is possible provided that the degree of deviation from stoichiometry is calculated with the assumption that the major part of the bulk carbon content is involved in O-C bonds. High temperature thermal annealing is found to cause an increase in the F{sub O} concentration and a decrease in both n and V{sub O} concentrations with the increase of the annealing temperature. These results could be interpreted in terms of a high temperature chemical exchange reaction between the SnO{sub 2} matrix and a precipitated fluoride phase. In this reaction, fluorine is released to the matrix and Sn is trapped by the fluoride phase, thus creating substitutional fluorine F{sub O} and tin vacancy V{sub Sn} defects. The enthalpy of this reaction is determined to be approximately 2.4 eV while the energy of formation of a V{sub Sn} through the migration of Sn{sub Sn} host atom to the fluoride phase is approximately 0.45 eV.

  10. Physicochemical characterization of point defects in fluorine doped tin oxide films

    NASA Astrophysics Data System (ADS)

    Akkad, Fikry El; Joseph, Sudeep

    2012-07-01

    The physical and chemical properties of spray deposited FTO films are studied using FESEM, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), electrical and optical measurements. The results of XRD measurements showed that the films are polycrystalline (grain size 20-50 nm) with Rutile structure and mixed preferred orientation along the (200) and (110) planes. An angular shift of the XRD peaks after F-doping is observed and interpreted as being due to the formation of substitutional fluorine defects (FO) in presence of high concentration of oxygen vacancies (VO) that are electrically neutral. The electrical neutrality of oxygen vacancies is supported by the observation that the electron concentration n is two orders of magnitude lower than the VO concentration calculated from chemical analyses using XPS measurements. It is shown that an agreement between XPS, XRD, and Hall effect results is possible provided that the degree of deviation from stoichiometry is calculated with the assumption that the major part of the bulk carbon content is involved in O-C bonds. High temperature thermal annealing is found to cause an increase in the FO concentration and a decrease in both n and VO concentrations with the increase of the annealing temperature. These results could be interpreted in terms of a high temperature chemical exchange reaction between the SnO2 matrix and a precipitated fluoride phase. In this reaction, fluorine is released to the matrix and Sn is trapped by the fluoride phase, thus creating substitutional fluorine FO and tin vacancy VSn defects. The enthalpy of this reaction is determined to be approximately 2.4 eV while the energy of formation of a VSn through the migration of SnSn host atom to the fluoride phase is approximately 0.45 eV.

  11. Polymer-assisted deposition of films

    DOEpatents

    McCleskey,Thomas M.; Burrell,Anthony K.; Jia,Quanxi; Lin,Yuan

    2012-02-28

    A polymer assisted deposition process for deposition of metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be conformal on a variety of substrates including non-planar substrates. In some instances, the films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  12. Continuous Microreactor-Assisted Solution Deposition for Scalable Production of CdS Films

    SciTech Connect

    Ramprasad, Sudhir; Su, Yu-Wei; Chang, Chih-Hung; Paul, Brian; Palo, Daniel R.

    2013-06-13

    Solution deposition offers an attractive, low temperature option in the cost effective production of thin film solar cells. Continuous microreactor-assisted solution deposition (MASD) was used to produce nanocrystalline cadmium sulfide (CdS) films on fluorine doped tin oxide (FTO) coated glass substrates with excellent uniformity. We report a novel liquid coating technique using a ceramic rod to efficiently and uniformly apply reactive solution to large substrates (152 mm × 152 mm). This technique represents an inexpensive approach to utilize the MASD on the substrate for uniform growth of CdS films. Nano-crystalline CdS films have been produced from liquid phase at ~90°C, with average thicknesses of 70 nm to 230 nm and with a 5 to 12% thickness variation. The CdS films produced were characterized by UV-Vis spectroscopy, transmission electron microscopy, and X-Ray diffraction to demonstrate their suitability to thin-film solar technology.

  13. Effect of cationic/anionic organic surfactants on evaporation induced self assembled tin oxide nanostructured films

    NASA Astrophysics Data System (ADS)

    Khun Khun, Kamalpreet; Mahajan, Aman; Bedi, R. K.

    2011-01-01

    Tin oxide nanostructures with well defined morphologies have been obtained through an evaporation induced self assembly process. The technique has been employed using an ultrasonic nebulizer for production of aersol and its subsequent deposition onto a heated glass substrate. The precursor used for aersol production was modified by introducing cationic and anionic surfactants namely cetyl trimethyl ammonium bromide and sodium dodecyl sulphate respectively. The effect of surfactants on the structural, electrical and optical properties of self assembled tin oxide nanostructures were investigated by using X-ray diffraction, field emission scanning electroscope microscopy, two probe technique and photoluminiscence studies. The results reveal that high concentration of surfactants in the precursor solution leads to reduction in crystallite size with significant changes in the morphology of tin oxide nanostructures. Photoluminiscence studies of the nanostructures show emissions in the visible region which exhibit marked changes in the intensities upon variation of surfactants in the precursor solutions.

  14. Physical properties of zinc doped tin oxide films prepared by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Vijayalakshmi, S.; Venkataraj, S.; Subramanian, M.; Jayavel, R.

    2008-02-01

    The structural and optical properties of pure and zinc doped tin oxide (SnO2) thin films have been studied in detail. Thin films of pure and zinc doped tin oxide (Zn : SnO2) were prepared on Si(1 0 0) and quartz substrates by the spray pyrolysis technique at a substrate temperature of 400 °C. The zinc dopant concentration was varied from 0 to 25 wt%. The films were systematically characterized by different methods to understand their structural and optical property variations, and the results were correlated. The x-ray diffraction (XRD) method shows that pure SnO2 films possess tetragonal crystalline structure with the preferred (1 1 0) orientation. Upon increasing the zinc concentration the preferred orientation changes from the (1 1 0) plane to the (2 0 0) plane, and at the same time the crystalline quality was found to be deteriorated. The Raman measurements also confirm the tetragonal structure of the films for the entire range of Zn doping. High resolution scanning electron microscopy measurements reveal that upon increasing the Zn concentration, the surface morphology of the films changes continuously and the grains also deteriorate. The elemental analysis of the films measured by energy dispersive XRD spectroscopy shows that the Zn concentration in the solid film is slightly less than that of the starting solution. Optical transmittance measurements of the films reveal that the films are fully transparent in the visible region. Upon increasing the Zn concentration, the band gap of the films decreases from 3.85 to 3.57 eV. Thus, the structural study performed by XRD and Raman spectroscopy clearly indicates the incorporation of Zn ion into SnO2 lattice, and the change in the optical properties of the films was directly attributed to the effect of Zn ion incorporation into SnO2 lattice.

  15. Perovskite thin films via atomic layer deposition.

    PubMed

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H

    2015-01-01

    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  16. Carrier interactions and porosity initiated reversal of temperature dependence of thermal conduction in nanoscale tin films

    SciTech Connect

    Kaul, Pankaj B.; Prakash, Vikas

    2014-01-14

    Recently, tin has been identified as an attractive electrode material for energy storage/conversion technologies. Tin thin films have also been utilized as an important constituent of thermal interface materials in thermal management applications. In this regards, in the present paper, we investigate thermal conductivity of two nanoscale tin films, (i) with thickness 500 ± 50 nm and 0.45% porosity and (ii) with thickness 100 ± 20 nm and 12.21% porosity. Thermal transport in these films is characterized over the temperature range from 40 K–310 K, using a three-omega method for multilayer configurations. The experimental results are compared with analytical predictions obtained by considering both phonon and electron contributions to heat conduction as described by existing frequency-dependent phenomenological models and BvK dispersion for phonons. The thermal conductivity of the thicker tin film (500 nm) is measured to be 46.2 W/m-K at 300 K and is observed to increase with reduced temperatures; the mechanisms for thermal transport are understood to be governed by strong phonon-electron interactions in addition to the normal phonon-phonon interactions within the temperature range 160 K–300 K. In the case of the tin thin film with 100 nm thickness, porosity and electron-boundary scattering supersede carrier interactions, and a reversal in the thermal conductivity trend with reduced temperatures is observed; the thermal conductivity falls to 1.83 W/m-K at 40 K from its room temperature value of 36.1 W/m-K. In order to interpret the experimental results, we utilize the existing analytical models that account for contributions of electron-boundary scattering using the Mayadas-Shatzkes and Fuchs-Sondheimer models for the thin and thick films, respectively. Moreover, the effects of porosity on carrier transport are included using a previous treatment based on phonon radiative transport involving frequency-dependent mean free paths

  17. Fabrication of highly transparent and conductive indium-tin oxide thin films with a high figure of merit via solution processing.

    PubMed

    Chen, Zhangxian; Li, Wanchao; Li, Ran; Zhang, Yunfeng; Xu, Guoqin; Cheng, Hansong

    2013-11-12

    Deposition technology of transparent conducting oxide (TCO) thin films is critical for high performance of optoelectronic devices. Solution-based fabrication methods can result in substantial cost reduction and enable broad applicability of the TCO thin films. Here we report a simple and highly effective solution process to fabricate indium-tin oxide (ITO) thin films with high uniformity, reproducibility, and scalability. The ITO films are highly transparent (90.2%) and conductive (ρ = 7.2 × 10(-4) Ω·cm) with the highest figure of merit (1.19 × 10(-2) Ω(-1)) among all the solution-processed ITO films reported to date. The high transparency and figure of merit, low sheet resistance (30 Ω/sq), and roughness (1.14 nm) are comparable with the benchmark properties of dc sputtering and can meet the requirements for most practical applications. PMID:24117323

  18. In situ electro-mechanical experiments and mechanics modeling of tensile cracking in indium tin oxide thin films on polyimide substrates

    NASA Astrophysics Data System (ADS)

    Peng, Cheng; Jia, Zheng; Bianculli, Dan; Li, Teng; Lou, Jun

    2011-05-01

    Indium tin oxide (ITO) thin films supported by polymer substrates have been widely used as transparent electrodes/interconnects in flexible electronics. Understanding the electro-mechanical behaviors of such material system is crucial for reliable operation of flexible devices under large deformation. In this paper, we performed in situ mechanical and electrical tests of ITO thin films with two different thicknesses (200 and 80 nm) deposited on polyimide substrates inside a scanning electron microscope. The crack initiation and propagation, crack density evolution and the corresponding electrical resistance variation were systematically investigated. It was found that cracks initiated at a higher tensile strain level and saturated with a higher density in thinner ITO films. Integrated with a coherently formulated mechanics model, the cohesive toughness and fracture strength of ITO thin films and the ITO/polyimide interfacial toughness were quantitatively determined. The experimentally observed thickness dependence of the saturated crack density in ITO thin films was also quantitatively verified by the model.

  19. Band gap shift in the indium-tin-oxide films on polyethylene napthalate after thermal annealing in air

    NASA Astrophysics Data System (ADS)

    Han, H.; Mayer, J. W.; Alford, T. L.

    2006-10-01

    Indium-tin-oxide (ITO) thin films on polyethylene napthalate (PEN) with high carrier concentration (˜1021/cm3) have been grown by electron-beam deposition without the introduction of oxygen into the chamber. The electrical properties of the ITO films (such as, carrier concentration, electrical mobility, and resistivity) abruptly changed after annealing in the air atmospheres. In addition, optical transmittance and optical band gap values significantly changed after heat treatment. The optical band gap narrowing behavior is observed in the as-deposited sample because of impurity band and heavy carrier concentration. The influence of annealing in air on the electrical and optical properties of ITO/PEN samples can be explained by the change in the free electron concentration, which is evaluated in terms of the oxygen content. Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy analyses are used to determine the oxygen content in the film. Hall effect measurements are used to determine the dependence of electrical properties on oxygen content.

  20. Effects of local film properties on the nucleation and growth of tin whiskers and hillocks

    NASA Astrophysics Data System (ADS)

    Sarobol, Pylin

    Whiskers and hillocks grow spontaneously on Pb-free Sn electrodeposited films as a response to thin film stresses. Stress relaxation occurs by atom deposition to specific grain boundaries in the plane of the film, with hillocks being formed when grain boundary migration accompanies growth out of the plane of the film. The implication for whisker formation in electronics is serious: whiskers can grow to be millimeters long, sometimes causing short circuiting between adjacent components and, thereby, posing serious electrical reliability risks. In order to develop more effective whisker mitigation strategies, a predictive physics-based model has been needed. A growth model is developed, based on grain boundary faceting, localized Coble creep, as well as grain boundary sliding for whiskers, and grain boundary sliding with shear induced grain boundary migration for hillocks. In this model of whisker formation, two mechanisms are important: accretion of atoms by Coble creep on grain boundary planes normal to the growth direction inducing a grain boundary shear and grain boundary sliding in the direction of whisker growth. The model accurately captures the importance of the geometry of "surface grains"---shallow grains on film surfaces whose depths are significantly less than their in-plane grain sizes. A critical factor in the analysis is the ratio of the grain boundary sliding coefficient to the in-plane film compressive stress. If the accretion-induced shear stresses are not coupled to grain boundary motion and sliding occurs, a whisker forms. If the shear stress is coupled to grain boundary migration, a hillock forms. Based on this model, long whiskers grow from shallow surface grains with easy grain boundary sliding in the direction of growth. Other observed growth morphologies will be discussed in light of our model. Additional insights into the preferred sites for whisker and hillock growth were developed based on elastic anisotropy, local film microstructure

  1. Growth feature of ionic nitrogen doped CNx bilayer films with Ti and TiN interlayer by pulse cathode arc discharge

    NASA Astrophysics Data System (ADS)

    Zhou, Bing; Liu, Zhubo; Piliptsou, D. G.; Rogachev, A. V.; Yu, Shengwang; Wu, Yanxia; Tang, Bin; Rudenkov, A. S.

    2016-01-01

    Using nano-scaled Ti and TiN as interlayer, ionic nitrogen doped carbon (CNx (N+)) bilayer films were prepared at various pulse frequencies by cathode arc technique. Elemental distribution at the interface, bonding compositions, microstructure, and mechanical properties of CNx (N+) bilayer films were investigated in dependence of interlayer and pulse frequency by Auger electron spectroscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, nanoindentation, and surface profilometer. The results showed that the diffusion extent of C atoms at the interface of CNx (N+) bilayers is higher than for the α-C and CNx (N2) bilayers with the same interlayer. Nitrogen atoms could diffuse throughout the pre-deposited Ti and TiN layers into the Si substrate for all CNx (N+) bilayers. Ti interlayer facilitates the introduction of N atoms into the CNx (N+) films and exhibits a certain catalytic effect on the coordination of N atoms with sp2- and sp3-C binding. More nitrogenated and intense CN bonding configurations (mainly graphite-like N) form in the TiN/CNx (N+) bilayer. Ti/CNx (N+) bilayer prepared at low frequency possesses small size and disordering of Csp2 clusters but TiN interlayer weakens the formation of Csp2 bonding and increases the disordering of Csp2 clusters in the films. The residual stress in the bilayer is lower than for CNx (N+) monolayer. The higher hardness and the lower residual stress are present in the TiN/CNx (N+, 10 Hz) bilayer.

  2. Surface measurement of indium tin oxide thin film by wavelength-tuning Fizeau interferometry.

    PubMed

    Kim, Yangjin; Hibino, Kenichi; Sugita, Naohiko; Mitsuishi, Mamoru

    2015-08-10

    Indium-tin oxide (ITO) thin films have been widely used in displays such as liquid crystal displays and touch panels because of their favorable electrical conductivity and optical transparency. The surface shape and thickness of ITO thin films must be precisely measured to improve their reliability and performance. Conventional measurement techniques take single point measurements and require expensive systems. In this paper, we measure the surface shape of an ITO thin film on top of a transparent plate using wavelength-tuning Fizeau interferometry. The surface shape was determined by compensating for the phase error introduced by optical interference from the thin film, which was calculated using the phase and amplitude distributions measured by wavelength-tuning. The proposed measurement method achieved noncontact, large-aperture, and precise measurements of transparent thin films. The surface shape of the sample was experimentally measured to an accuracy of 5.13 nm. PMID:26368388

  3. Low temperature deposition of transparent conducting ITO/Au/ITO films by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kim, Daeil

    2010-01-01

    Transparent conducting indium tin oxide/Au/indium tin oxide (ITO) multilayered films were deposited on unheated polycarbonate substrates by magnetron sputtering. The thickness of the Au intermediated film varied from 5 to 20 nm. Changes in the microstructure, surface roughness and optoelectrical properties of the ITO/Au/ITO films were investigated with respect to the thickness of the Au intermediated layer. X-ray diffraction measurements of ITO single layer films did not show characteristic diffraction peaks, while ITO/Au/ITO films showed an In 2O 3 (2 2 2) characteristic diffraction peak. The optoelectrical properties of the films were also dependent on the presence and thickness of the Au thin film. The ITO 50 nm/Au 10 nm/ITO 40 nm films had a sheet resistance of 5.6 Ω/□ and an average optical transmittance of 72% in the visible wavelength range of 400-700 nm. Consequently, the crystallinity, which affects the optoelectrical properties of ITO films, can be enhanced with Au intermediated films.

  4. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  5. Heteroepitaxial structures of SrTiO{sub 3}/TiN on Si(100) by {ital in} {ital situ} pulsed laser deposition

    SciTech Connect

    Vispute, R.D.; Narayan, J.; Dovidenko, K.; Jagannadham, K.; Parikh, N.; Suvkhanov, A.; Budai, J.D.

    1996-12-01

    High-quality ceramics based heteroepitaxial structures of oxide-nitride-semiconductors, i.e., SrTiO{sub 3}/TiN/Si(100) have been fabricated by {ital in} {ital situ} pulsed laser deposition. The dependence of substrate temperature and oxygen partial pressure on the crystalline quality of the SrTiO{sub 3} films on Si with epitaxial TiN template has been examined. We found that epitaxial growth occurs on TiN/Si(100) above 500{degree}C, initially at a reduced O{sub 2} pressure (10{sup {minus}6} Torr), and followed by a deposition in the range of 5{endash}10{times}10{sup {minus}4} Torr. X-ray diffraction ({Theta}, {omega}, and {Phi} scans) and transmission electron microscope (TEM) results revealed an excellent alignment of SrTiO{sub 3} and TiN films on Si(100) with a cube-on-cube epitaxy. Rutherford backscattering and ion channeling results show a channeling minimum yield ({chi}{sub min}) of {approximately}13{percent} for the SrTiO{sub 3} films. High-resolution TEM results on the SrTiO{sub 3}/TiN interface show that the epitaxial SrTiO{sub 3} film is separated from the TiN by an uniform 80{endash}90 A crystalline interposing layer presumably of TiN{sub {ital x}}O{sub 1{minus}{ital x}} (oxy-nitride). The SrTiO{sub 3} film fabricated at 700{degree}C showed a high relative dielectric constant of 312 at the frequency of 1 MHz. The electrical resistivity and the breakdown field of the SrTiO{sub 3} films were more than 5{times}10{sup 12} {Omega}cm and 6{times}10{sup 5} Vcm{sup {minus}1}, respectively. An estimated leakage current density measured at an electric field of 5{times}10{sup 5} V/cm{sup {minus}1} was less than 10{sup {minus}7} A/cm{sup 2}. {copyright} {ital 1996 American Institute of Physics.}

  6. Laser patterning of very thin indium tin oxide thin films on PET substrates

    NASA Astrophysics Data System (ADS)

    McDonnell, C.; Milne, D.; Prieto, C.; Chan, H.; Rostohar, D.; O'Connor, G. M.

    2015-12-01

    This work investigates the film removal properties of 30 nm thick Indium Tin Oxide (ITO) thin films, on flexible polyethylene terephthalate (PET) substrates, using 355, 532 and 1064 nm nanosecond pulses (ns), and 343 and 1064 nm femtosecond pulses. The ablation threshold was found to be dependent on the applied wavelength and pulse duration. The surface topography of the laser induced features were examined using atomic force microscopy across the range of wavelengths and pulse durations. The peak temperature, strain and stress tensors were examined in the film and substrate during laser heating, using finite element computational methods. Selective removal of the thin ITO film from the polymer substrate is possible at all wavelengths except at 266 nm, were damage to substrate is observed. The damage to the substrate results in periodic surface structures (LIPPS) on the exposed PET, with a period of twice the incident wavelength. Fragmented crater edges are observed at all nanosecond pulse durations. Film removal using 1030 nm femtosecond pulses results in clean crater edges, however, minor 5 nm damage to the substrate is also observed. The key results show that film removal for ITO on PET, is through film de-lamination across all wavelengths and pulse durations. Film de-lamination occurs due to thermo-elastic stress at the film substrate interface region, as the polymer substrate expands under heating from direct laser absorption and heat conduction across the film substrate interface.

  7. Indium tin oxide nanowires grown by one-step thermal evaporation-deposition process at low temperature.

    PubMed

    Dong, Haibo; Zhang, Xiaoxian; Niu, Zhiqiang; Zhao, Duan; Li, Jinzhu; Cai, Le; Zhou, Weiya; Xie, Sishen

    2013-02-01

    Indium tin oxide (ITO), as one of the most important transparent conducting oxide, is widely used in electro-optical field. We have developed a simple one-step method to synthesize ITO nanowires at low temperature of 600 degrees C. In detail, mixtures of InN nanowires and SnO powder, with the molar ratio of 10:1, have been used as precursors for the thermal evaporation-deposition of ITO nanowires on silicon/quartz slices. During the growth process, the evaporation temperature is maintained at 600 degrees C, which favors the decomposition of InN and oxidation of In, with a limited incorporation of Sn in the resulting compound (In:Sn approximately 11:1 in atomic ratio). As far as we know, this is the lowest growth temperature reported on the thermal deposition of ITO nanowires. The diameters of the nanowires are about 120 nm and the lengths are up to tens of micrometers. XRD characterization indicates the high crystallization of the nanowires. HRTEM results show the nanowires grow along the [200] direction. The transmittance of the nanowire film on quartz slice is more than 75% in the visible region. Based on photolithography and lift-off techniques, four-terminal measurement was utilized to test the resistivity of individual nanowire (6.11 x 10(-4) omega x cm). The high crystallization quality, good transmittance and low resistivity make as-grown ITO nanowires a promising candidate as transparent electrodes of nanoscale devices. PMID:23646624

  8. Anomalous infrared transmission of indium tin oxide thin films on two-dimensional nanosphere arrays.

    PubMed

    Jiang, Hang; Zhou, Yuqin; Zhou, Yurong

    2016-04-15

    The excitation of surface plasmons was studied by nano-structural indium tin oxide (ITO) films in the infrared range using nano-imprint lithography (NIL). We investigated the effect of the diameter of silica spheres, thickness of ITO film, and ordering degree of the mask plate on the transmission spectra of structural ITO films by experiments and simulations. Increasing the diameter of silica spheres makes the transmission valley blueshift, while increasing the thickness of ITO film leads the transmission valley redshift. The transmission valley corresponds to the absorption band which results from the excitation of surface plasmons. The ordering degree and the surface coverage ratios of mask plate affect the transmission feature directly. An excitation of local surface plasmons may exist on the undulated ITO surface. PMID:27082363

  9. Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

    SciTech Connect

    Marikkannan, M.; Subramanian, M.; Tanemura, M.; Mayandi, J. E-mail: jeyanthinath@yahoo.co.in; Vishnukanthan, V.; Pearce, J. M. E-mail: jeyanthinath@yahoo.co.in

    2015-01-15

    Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O{sub 2}), hydrogen (H{sub 2}) and nitrogen (N{sub 2}) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O{sub 2}+H{sub 2} ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O{sub 2}, H{sub 2} on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O{sub 2} and Ar+O{sub 2}+H{sub 2}. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O{sub 2}+H{sub 2} sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O{sub 2}+H{sub 2} ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O{sub 2}+H

  10. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  11. Electrochromism in sputter deposited W1-y MoyO3 thin films

    NASA Astrophysics Data System (ADS)

    Arvizu, M. A.; Granqvist, C. G.; Niklasson, G. A.

    2016-02-01

    Electrochromic (EC) properties of tungsten-molybdenum oxide (W1-y MoyO3) thin films were investigated. The films were deposited on indium tin oxide covered glass by reactive DC sputtering from tungsten and molybdenum targets. Elemental compositions of the W1-y MoyO3 films were determined by Rutherford back scattering. Voltammetric cycling was performed in an electrolyte of 1 M LiClO4 in propylene carbonate. An increase in molybdenum content in the EC films caused both a shift towards higher energies and a lowering of the maximum of the optical absorption band, as compared with WO3 EC films. Durability under electrochemical cycling was diminished for W1-y MoyO3 EC films.

  12. Synthesis And Characterization of Copper Zinc Tin Sulfide Nanoparticles And Thin Films

    NASA Astrophysics Data System (ADS)

    Khare, Ankur

    Copper zinc tin sulfide (Cu2ZnSnS4, or CZTS) is emerging as an alternative material to the present thin film solar cell technologies such as Cu(In,Ga)Se2 and CdTe. All the elements in CZTS are abundant, environmentally benign, and inexpensive. In addition, CZTS has a band gap of ˜1.5 eV, the ideal value for converting the maximum amount of energy from the solar spectrum into electricity. CZTS has a high absorption coefficient (>104 cm-1 in the visible region of the electromagnetic spectrum) and only a few micron thick layer of CZTS can absorb all the photons with energies above its band gap. CZT(S,Se) solar cells have already reached power conversion efficiencies >10%. One of the ways to improve upon the CZTS power conversion efficiency is by using CZTS quantum dots as the photoactive material, which can potentially achieve efficiencies greater than the present thin film technologies at a fraction of the cost. However, two requirements for quantum-dot solar cells have yet to be demonstrated. First, no report has shown quantum confinement in CZTS nanocrystals. Second, the syntheses to date have not provided a range of nanocrystal sizes, which is necessary not only for fundamental studies but also for multijunction photovoltaic architectures. We resolved these two issues by demonstrating a simple synthesis of CZTS, Cu2SnS3, and alloyed (Cu2SnS3) x(ZnS)y nanocrystals with diameters ranging from 2 to 7 nm from diethyldithiocarbamate complexes. As-synthesized nanocrystals were characterized using high resolution transmission electron microscopy, X-ray diffraction, Raman spectroscopy, and energy dispersive spectroscopy to confirm their phase purity. Nanocrystals of diameter less than 5 nm were found to exhibit a shift in their optical absorption spectra towards higher energy consistent with quantum confinement and previous theoretical predictions. Thin films from CZTS nanocrystals deposited on Mo-coated quartz substrates using drop casting were found to be continuous

  13. Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications

    NASA Astrophysics Data System (ADS)

    Gu, Jin-Hua; Si, Jia-Le; Wang, Jiu-Xiu; Feng, Ya-Yang; Gao, Xiao-Yong; Lu, Jing-Xiao

    2015-11-01

    The indium-tin oxide (ITO) film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction (HJ) solar cells. To obtain high transmittance and low resistivity ITO films by direct-current (DC) magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4×10-4 Ω·m and average transmittance of 89% in the wavelength range of 380-780 nm were obtained under the optimized conditions: oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si:H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage (Voc) of 0.626 V, a filling factor (FF) of 0.50, and a short circuit current density (Jsc) of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si:H layer was inserted between the (p) a-Si:H and (n) c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si:H. Project supported by the National High Technology Research and Development Program of China (Grant No. 2011AA050501).

  14. Optical generation of free charge carriers in thin films of tin oxide

    SciTech Connect

    Zhurbina, I. A. Tsetlin, O. I.; Timoshenko, V. Yu.

    2011-02-15

    The methods of infrared absorption spectroscopy and Raman spectroscopy are used to study nanocrystalline SnO{sub x} films (1 {<=} x {<=} 2) prepared by thermal oxidation of metallic tin layers. A monotonic decrease in the transmittance of films in the infrared region has been observed as a result of exposure of the films to light with the wavelength of 380 nm at room temperature. The effect is at a maximum for the samples with x Almost-Equal-To 2 and is observed for {approx}10 min after switching off of illumination. The mentioned variations in optical properties, similarly to those observed in the case of heating of the samples in the dark, are accounted for by an increase in the concentration of free charge carriers (electrons) in nanocrystals of tin dioxide. The data of infrared spectroscopy and the Drude model are used to calculate the concentrations of photogenerated charge carriers ({approx}10{sup 19} cm{sup -3}); variations in these concentrations in the course of illumination and after switching off of illumination are determined. Mechanisms of observed photogeneration of charge carriers in SnO{sub x} films and possible applications of this effect to gas sensors are discussed.

  15. Iron films deposited on porous alumina substrates

    NASA Astrophysics Data System (ADS)

    Yamada, Yasuhiro; Tanabe, Kenichi; Nishida, Naoki; Kobayashi, Yoshio

    2016-12-01

    Iron films were deposited on porous alumina substrates using an arc plasma gun. The pore sizes (120 - 250 nm) of the substrates were controlled by changing the temperature during the anodic oxidation of aluminum plates. Iron atoms penetrated into pores with diameters of less than 160 nm, and were stabilized by forming γ-Fe, whereas α-Fe was produced as a flat plane covering the pores. For porous alumina substrates with pore sizes larger than 200 nm, the deposited iron films contained many defects and the resulting α-Fe had smaller hyperfine magnetic fields. In addition, only a very small amount of γ-Fe was obtained. It was demonstrated that the composition and structure of an iron film can be affected by the surface morphology of the porous alumina substrate on which the film is grown.

  16. Ultrashort pulse laser deposition of thin films

    DOEpatents

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  17. Stainless Steel Bipolar Plates Deposited with Multilayer Films for PEMFC Applications

    NASA Astrophysics Data System (ADS)

    Cho, Hyun; Yun, Young-Hoon

    2013-08-01

    A chromium nitride (CrN, Cr2N)/chromium (Cr)/indium-tin-oxide (ITO) system and a gold (Au)/titanium (Ti) system were separately deposited using a sputtering method and an E-beam method, respectively, onto stainless steel 316 and 304 plates. The XRD patterns of the deposited stainless steel plates showed the crystalline phase of typical indium-tin oxide and of metallic phases, such as chromium, gold, and the metal substrate, as well as those of external chromium nitride films. The nitride films were composed of two metal nitride phases that consisted of CrN and Cr2N compounds. The surface morphologies of the modified stainless steel bipolar plates were observed using atomic force microscopy and FE-SEM. The chromium nitride (CrN, Cr2N)/chromium (Cr)/indium-tin-oxide (ITO) multilayer that was formed on the stainless steel plates had a surface microstructural morphology that consisted of fine columnar grains 10 nm in diameter and 60 nm in length. The external gold films that were formed on the stainless steel plates had a grain microstructure approximately 100 nm in diameter. The grain size of the external surface of the stainless steel plates with the gold (Au)/titanium (Ti) system increased with increasing gold film thickness. The electrical resistances and water contact angles of the stainless steel bipolar plates that were covered with the multilayer films were examined as a function of the thickness of the ITO film or of the external gold film. In the corrosion test, ICP-MS results indicated that the gold (Au)/titanium (Ti) films showed relatively excellent chemical stability after exposure to H2SO4 solution with pH 3 at 80 °C.

  18. Self-consistent modelling of X-ray photoelectron spectra from air-exposed polycrystalline TiN thin films

    NASA Astrophysics Data System (ADS)

    Greczynski, G.; Hultman, L.

    2016-11-01

    We present first self-consistent modelling of x-ray photoelectron spectroscopy (XPS) Ti 2p, N 1s, O 1s, and C 1s core level spectra with a cross-peak quantitative agreement for a series of TiN thin films grown by dc magnetron sputtering and oxidized to different extent by varying the venting temperature Tv of the vacuum chamber before removing the deposited samples. So-obtained film series constitute a model case for XPS application studies, where certain degree of atmosphere exposure during sample transfer to the XPS instrument is unavoidable. The challenge is to extract information about surface chemistry without invoking destructive pre-cleaning with noble gas ions. All TiN surfaces are thus analyzed in the as-received state by XPS using monochromatic Al Kα radiation (hν = 1486.6 eV). Details of line shapes and relative peak areas obtained from deconvolution of the reference Ti 2p and N 1 s spectra representative of a native TiN surface serve as an input to model complex core level signals from air-exposed surfaces, where contributions from oxides and oxynitrides make the task very challenging considering the influence of the whole deposition process at hand. The essential part of the presented approach is that the deconvolution process is not only guided by the comparison to the reference binding energy values that often show large spread, but in order to increase reliability of the extracted chemical information the requirement for both qualitative and quantitative self-consistency between component peaks belonging to the same chemical species is imposed across all core-level spectra (including often neglected O 1s and C 1s signals). The relative ratios between contributions from different chemical species vary as a function of Tv presenting a self-consistency check for our model. We propose that the cross-peak self-consistency should be a prerequisite for reliable XPS peak modelling as it enhances credibility of obtained chemical information, while relying

  19. Effect of Cr doping on the structural, morphological, optical and electrical properties of indium tin oxide films

    NASA Astrophysics Data System (ADS)

    Mirzaee, Majid; Dolati, Abolghasem

    2015-03-01

    We report on the preparation and characterization of high-purity chromium (0.5-2.5 at.%)-doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol-gel-mediated dip coating. The effects of different Cr-doping contents on structural, morphological, optical and electrical properties of the films were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV-Vis spectroscopy and four-point probe methods. XRD showed high phase purity cubic In2O3 and indicated a contraction of the lattice with Cr doping. FESEM micrographs show that grain size decreased with increasing the Cr-doping content. A method to determine chromium species in the sample was developed through the decomposition of the Cr 2 p XPS spectrum in Cr6+ and Cr3+ standard spectra. Optical and electrical studies revealed that optimum opto-electronic properties, including minimum sheet resistance of 4,300 Ω/Sq and an average optical transmittance of 85 % in the visible region with a band gap of 3.421 eV, were achieved for the films doped with Cr-doping content of 2 at.%.

  20. Calcium phosphate thin film processing by pulsed laser deposition and in situ assisted ultraviolet pulsed laser deposition.

    PubMed

    Nelea, V; Pelletier, H; Iliescu, M; Werckmann, J; Craciun, V; Mihailescu, I N; Ristoscu, C; Ghica, C

    2002-12-01

    Calcium orthophosphates (CaP) and hydroxyapatite (HA) were intensively studied in order to design and develop a new generation of bioactive and osteoconductive bone prostheses. The main drawback now in the CaP and HA thin films processing persists in their poor mechanical characteristics, namely hardness, tensile and cohesive strength, and adherence to the metallic substrate. We report here a critical comparison between the microstructure and mechanical properties of HA and CaP thin films grown by two methods. The films were grown by KrF* pulsed laser deposition (PLD) or KrF* pulsed laser deposition assisted by in situ ultraviolet radiation emitted by a low pressure Hg lamp (UV-assisted PLD). The PLD films were deposited at room temperature, in vacuum on Ti-5Al-2.5Fe alloy substrate previously coated with a TiN buffer layer. After deposition the films were annealed in ambient air at 500-600 degrees C. The UV-assisted PLD films were grown in (10(-2)-10(-1) Pa) oxygen directly on Ti-5Al-2.5Fe substrates heated at 500-600 degrees C. The films grown by classical PLD are crystalline and stoichiometric. The films grown by UV-assisted PLD were crystalline and exhibit the best mechanical characteristics with values of hardness and Young modulus of 6-7 and 150-170 GPa, respectively, which are unusually high for the calcium phosphate ceramics. To the difference of PLD films, in the case of UV-assisted PLD, the GIXRD spectra show the decomposition of HA in Ca(2)P(2)O(7), Ca(2)P(2)O(9) and CaO. The UV lamp radiation enhanced the gas reactivity and atoms mobility during processing, increasing the tensile strength of the film, while the HA structure was destroyed.

  1. Characterization of CuInTe2 thin films deposited by electrochemical technique

    NASA Astrophysics Data System (ADS)

    Patil, Neelima A.; Lakhe, Manorama; Chaure, N. B.

    2012-06-01

    Copper Indium ditelluride (CuInTe2) thin films were deposited onto fluorine doped tin oxide (FTO) coated glass substrates by electrodeposition technique. Cyclic voltammetry analysis was used to optimize suitable deposition parameters. Micro structural properties were examined by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDAX) for as-deposited and annealed films at 400 °C. After annealing the prominent (112), (220/204), (312/116) peaks of CuInTe2 (CIT) were observed indicate tetragonal structure which is most common structure of I-III-VI2 semiconductors, suitable for high efficiency photovoltaic devices. The band gap of the CIT film was determined around 1.01 eV. Elemental composition analysis was performed using energy dispersive X-ray analysis (EDAX).

  2. V2O5 thin film deposition for application in organic solar cells

    NASA Astrophysics Data System (ADS)

    Arbab, Elhadi A. A.; Mola, Genene Tessema

    2016-04-01

    Vanadium pentoxide V2O5 films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V2O5 films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V2O5 as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V2O5 buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS.

  3. Temperature threshold for nanorod structuring of metal and oxide films grown by glancing angle deposition

    SciTech Connect

    Deniz, Derya; Lad, Robert J.

    2011-01-15

    Thin films of tin (Sn), aluminum (Al), gold (Au), ruthenium (Ru), tungsten (W), ruthenium dioxide (RuO{sub 2}), tin dioxide (SnO{sub 2}), and tungsten trioxide (WO{sub 3}) were grown by glancing angle deposition (GLAD) to determine the nanostructuring temperature threshold, {Theta}{sub T}, above which adatom surface diffusion becomes large enough such that nanorod morphology is no longer formed during growth. The threshold was found to be lower in metals compared to oxides. Films were grown using both dc and pulsed dc magnetron sputtering with continuous substrate rotation over the temperature range from 291 to 866 K. Film morphologies, structures, and compositions were characterized by high resolution scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Films were also grown in a conventional configuration for comparison. For elemental metals, nanorod structuring occurs for films with melting points higher than that of Al (933 K) when grown at room temperature with a rotation rate of {approx}5 rpm, corresponding to a value of {Theta}{sub T}{approx_equal}0.33{+-}0.01. For the oxide films, a value of {Theta}{sub T}{approx_equal}0.5 was found, above which GLAD nanorod structuring does not occur. The existence of a nanostructuring temperature threshold in both metal and oxide GLAD films can be attributed to greater adatom mobilities as temperature is increased resulting in nonkinetically limited film nucleation and growth processes.

  4. The impact of sodium contamination in tin sulfide thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Steinmann, Vera; Brandt, Riley E.; Chakraborty, Rupak; Jaramillo, R.; Young, Matthew; Ofori-Okai, Benjamin K.; Yang, Chuanxi; Polizzotti, Alex; Nelson, Keith A.; Gordon, Roy G.; Buonassisi, Tonio

    2016-02-01

    Through empirical observations, sodium (Na) has been identified as a benign contaminant in some thin-film solar cells. Here, we intentionally contaminate thermally evaporated tin sulfide (SnS) thin-films with sodium and measure the SnS absorber properties and solar cell characteristics. The carrier concentration increases from 2 × 1016 cm-3 to 4.3 × 1017 cm-3 in Na-doped SnS thin-films, when using a 13 nm NaCl seed layer, which is detrimental for SnS photovoltaic applications but could make Na-doped SnS an attractive candidate in thermoelectrics. The observed trend in carrier concentration is in good agreement with density functional theory calculations, which predict an acceptor-type NaSn defect with low formation energy.

  5. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    SciTech Connect

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-09-28

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  6. Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

    NASA Astrophysics Data System (ADS)

    Nyoung Jang, Jin; Jong Lee, You; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo

    2016-06-01

    In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.

  7. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    NASA Astrophysics Data System (ADS)

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-09-01

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  8. Ultrasound-Assisted Deposition Of Dielectric Films

    NASA Astrophysics Data System (ADS)

    Hwangbo, C. K.; Jacobson, M. R.; Macleod, H. A.; Potoff, R. H.

    1986-12-01

    The effects of ultrasound-assisted deposition (UAD) of ZrOx , Ta0x , and MgFx films on their optical properties have been investigated. The direction of vibration is transverse to the direction of growing films on substrates that are glued to tubular piezoelectric transducers driven by a power amplifier. Results indicate that ultrasonic powers above 20 W/cm2 are required to induce detectable changes in UV absorption and vacuum-to-air shifts of spectral profiles. UAD is likely to induce oxygen and fluoride deficiencies in oxide and fluoride films and increase the packing density of films. No significant changes between UAD and conventional films were observed in x-ray diffraction analysis, humidity testing, and Nomarski microscopy.

  9. Semiconductor and ceramic nanoparticle films deposited by chemical bath deposition.

    PubMed

    Hodes, Gary

    2007-06-14

    Chemical bath deposition (CBD) has been used to deposit films of metal sulfides, selenides and oxides, together with some miscellaneous compounds, beginning nearly 140 years ago. While it is a well-known technique in a few specific areas (notably photoconductive lead salt detectors, photoelectrodes and more recently, thin film solar cells), it is by and large an under-appreciated technique. The more recent interest in all things 'nano' has provided a boost for CBD: since it is a low temperature, solution (almost always aqueous) technique, crystal size is often very small. This is evidenced by the existence of size quantization commonly found in CBD semiconductor films. The intention of this review is to provide readers, many of whom may not even be aware of the CBD technique, with an overview of how the technique has been used to fabricate nanocrystalline semiconductor (this terminology also includes oxides often classified as ceramics) films and some properties of these films. The review begins, after a short introduction, with a general description of the CBD method, designed to give the reader a basic knowledge of the technique. The rest of the review then focuses on nanocrystalline (or, in the few cases of amorphous deposits, nanoparticle) films. The various factors which determine crystal size are first discussed. This is followed by some of the many examples of size quantization observed in the films. Since CBD films are usually porous, surface effects can be very important, and various surface-dependent properties (light emission and surface states) as well as surface modification, are treated: (although some properties, like emission, can be strongly dependent on both surface and 'bulk'). Because of the fact that many CBD films have been made specifically for use as photoelectrodes in photoelectrochemical cells, there is next a chapter on this topic with a few examples of such photoelectrodes. Film structure and morphology follows with examples of

  10. Thermal transport properties of polycrystalline tin-doped indium oxide films

    SciTech Connect

    Ashida, Toru; Miyamura, Amica; Oka, Nobuto; Sato, Yasushi; Shigesato, Yuzo; Yagi, Takashi; Taketoshi, Naoyuki; Baba, Tetsuya

    2009-04-01

    Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on a fused silica substrate by dc magnetron sputtering using an oxide ceramic ITO target (90 wt %In{sub 2}O{sub 3} and 10 wt %SnO{sub 2}). The resistivity and carrier density of the ITO films ranged from 2.9x10{sup -4} to 3.2x10{sup -3} {omega} cm and from 1.9x10{sup 20} to 1.2x10{sup 21} cm{sup -3}, respectively. The thermal diffusivity of the ITO films was (1.5-2.2)x10{sup -6} m{sup 2}/s, depending on the electrical conductivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in ITO films with various resistivities was found to be almost constant ({lambda}{sub ph}=3.95 W/m K), which was about twice that for amorphous indium zinc oxide films.

  11. Structure, stability and electrochromic properties of polyaniline film covalently bonded to indium tin oxide substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Wenzhi; Ju, Wenxing; Wu, Xinming; Wang, Yan; Wang, Qiguan; Zhou, Hongwei; Wang, Sumin; Hu, Chenglong

    2016-03-01

    Indium tin oxide (ITO) substrate was modified with 4-aminobenzylphosphonic acid (ABPA), and then the polyaniline (PANI) film covalently bonded to ITO substrate was prepared by the chemical oxidation polymerization. X-ray photoelectron spectroscopy (XPS), attenuated total reflection infrared (ATR-IR) spectroscopy, and atomic force microscopy (AFM) measurements demonstrated that chemical binding was formed between PANI and ABPA-modified ITO surface, and the maximum thickness of PANI layer is about 30 nm. The adhesive strength of PANI film on ITO substrate was tested by sonication. It was found that the film formed on the modified ITO exhibited a much better stability than that on bare one. Cyclic voltammetry (CV) and UV-vis spectroscopy measurements indicated that the oxidative potentials of PANI film on ABPA-modified ITO substrate were decreased and the film exhibited high electrochemical activities. Moreover, the optical contrast increased from 0.58 for PANI film (without ultrasound) to 1.06 for PANI film (after ultrasound for 60 min), which had an over 83% enhancement. The coloration time was 20.8 s, while the bleaching time was 19.5 s. The increase of electrochromic switching time was due to the lower ion diffusion coefficient of the large cation of (C4H9)4N+ under the positive and negative potentials as comparison with the small Li+ ion.

  12. Preparation and characterization of indium tin oxide films by sol-gel method

    NASA Astrophysics Data System (ADS)

    Ciuciumis, Alina; Cernica, Ileana

    2007-05-01

    Sol-gel technology is a relatively simple and cheap process to deposit oxides under thin film form out of a sol. The experiments were developed in order to obtain nanomaterials by sol-gel method; nanomaterials that mixed with resin and additives can be deposited in thin and uniform films by spraying on different lignocellulosic composite surfaces. This method assures a functional finishing of the nanomaterials. These films are transparent and the surfaces are flat with no cracks. The influence of substrate type, morphology of the films and of the substrates before and after deposition was studied by means of optical microscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The sol-gel deposit on the lignocellulosic composite substrates lowered the sorption rates of water and water vapours.

  13. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    DOE PAGESBeta

    Leng, X.; Bozovic, I.; Bollinger, A. T.

    2016-08-10

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a puremore » electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.« less

  14. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    PubMed Central

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-01-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths. PMID:27667259

  15. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    PubMed Central

    Leng, X.; Bollinger, A. T.; Božović, I.

    2016-01-01

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices. PMID:27506371

  16. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    NASA Astrophysics Data System (ADS)

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-09-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths.

  17. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Leng, X.; Bollinger, A. T.; Božović, I.

    2016-08-01

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.

  18. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films.

    PubMed

    Leng, X; Bollinger, A T; Božović, I

    2016-01-01

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices. PMID:27506371

  19. Photobiomolecular deposition of metallic particles and films

    DOEpatents

    Hu, Zhong-Cheng

    2005-02-08

    The method of the invention is based on the unique electron-carrying function of a photocatalytic unit such as the photosynthesis system I (PSI) reaction center of the protein-chlorophyll complex isolated from chloroplasts. The method employs a photo-biomolecular metal deposition technique for precisely controlled nucleation and growth of metallic clusters/particles, e.g., platinum, palladium, and their alloys, etc., as well as for thin-film formation above the surface of a solid substrate. The photochemically mediated technique offers numerous advantages over traditional deposition methods including quantitative atom deposition control, high energy efficiency, and mild operating condition requirements.

  20. Flexible transparent heaters with heating films made of indium tin oxide nanoparticles.

    PubMed

    Im, Kiju; Chol, Kyoungah; Kwak, Kiyeol; Kim, Jonghyun; Kim, Sangsig

    2013-05-01

    In this study, flexible transparent heaters with heating films made of indium tin oxide (ITO) are fabricated on plastic substrates. The optical transmittance of a representative flexible heater is above 90% in the visible and near infrared regions. The steady-state temperature is determined by the bias voltage and reaches about 180 degrees C at a bias voltage of 50 V. The heat-generating properties are nearly the same before and after the application of tensile strain. Furthermore, the defrosting ability is demonstrated using a block of dry-ice. PMID:23858892

  1. Electrochemical impedance analysis of spray deposited CZTS thin film: Effect of Se introduction

    NASA Astrophysics Data System (ADS)

    Patil, Swati J.; Lokhande, Vaibhav C.; Lee, Dong-Weon; Lokhande, Chandrakant D.

    2016-08-01

    The present work deals with electrochemical impedance analysis of spray deposited Cu2ZnSnS4 (CZTS) thin films grown on fluorine doped tin oxide (FTO) substrates and effect of post Se introduction. The CZTS thin films are characterized using X-ray diffraction (XRD), X-Ray photo spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM) and UV-Vis spectroscopy techniques. The electrochemical measurements are carried out using impedance analysis spectroscopy. The strong peak in XRD pattern along (112) plane confirms the Kestrite crystal structure of CZTS film. The FE-SEM analysis reveals that nanoflakes contain crack-free surface microstructure changes with post Se introucation. The optical study reveals that absorption increases with Se dipping time and observed lower band gap of 1.31 eV. Introduction of Se in CZTS film results an improvement in the grain size and surface morphology which leads to increased electrical conductivity of CZTS film.

  2. (Chemically vapor deposited diamond films)

    SciTech Connect

    Clausing, R.E.; Heatherly, L. Jr.

    1990-09-22

    The NATO-ASI on Diamond and Diamond-Like Films and Coatings'' was an opportunity for us to learn the latest research results from ongoing programs in the leading laboratories of the world and relate them to our work. Specific examples are given in the comprehensive report which follows. The meeting format provided an ideal environment to meet and interact with our international counterparts. It is clear that our studies are well regarded, and that we have established an excellent reputation in a short time. New opportunities for collaboration were identified. A panel discussion at the end of the meeting addressed the needs and opportunities in the synthesis of CVD diamond. The key scientific needs are those related to modeling the nucleation and growth processes and to elucidation of the critical roles of atomic hydrogen and the mechanisms of carbon addition to the growing surfaces. The development and more extensive use of in situ diagnostics for both surface and gas phases are important to solving these issues. The more immediate practical questions concern the identification of the growth-rate-limiting steps, the relation of growth parameters to the resulting film structure, and the dependence of properties on structure.

  3. Controllable nitrogen doping in as deposited TiO{sub 2} film and its effect on post deposition annealing

    SciTech Connect

    Deng, Shaoren; Devloo-Casier, Kilian; Devulder, Wouter; Dendooven, Jolien; Deduytsche, Davy; Detavernier, Christophe; Lenaerts, Silvia; Martens, Johan A.; Van den Berghe, Sven

    2014-01-15

    In order to narrow the band gap of TiO{sub 2}, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO{sub 2} and plasma enhanced atomic layer deposition (PEALD) of TiN has been implemented. By altering the ratio between TALD TiO{sub 2} and PEALD TiN, the as synthesized TiO{sub x}N{sub y} films showed different band gaps (from 1.91 eV to 3.14 eV). In situ x-ray diffraction characterization showed that the crystallization behavior of these films changed after nitrogen doping. After annealing in helium, nitrogen doped TiO{sub 2} films crystallized into rutile phase while for the samples annealed in air a preferential growth of the anatase TiO{sub 2} along (001) orientation was observed. Photocatalytic tests of the degradation of stearic acid were done to evaluate the effect of N doping on the photocatalytic activity.

  4. Photochemical Deposition of Patterned Gold Thin Films

    NASA Astrophysics Data System (ADS)

    Kumaran, Abbu Udaiyar Senthil; Miyawaki, Tetsuya; Ichimura, Masaya

    2006-12-01

    We present a novel route for patterned gold thin-film deposition on glass substrates with the help of UV-light irradiation. Chloroauric acid (HAuCl4) is used as a source material and sodium sulfite (Na2SO3) acts as a reducing agent in an aqueous solution. Ethylene diamine (EDA) is added to increase the solution stability. The deposition solution is injected on the substrate. A patterned metal mask is placed 5 mm above the substrate, and the solution is illuminated for 15 min by an ultrahigh-pressure mercury arc lamp. A patterned Au film with a thickness of 0.1-0.2 μm is deposited.

  5. The tin precursors and hydrogen peroxide effects on spray-deposited SnO2:F-(n)Si solar cells

    NASA Astrophysics Data System (ADS)

    Adnane, M.; Cachet, H.; Folcher, G.; Hamzaoui, S.; Sahraoui, T.; Bouderbala, M.; Zerdali, M.

    2011-10-01

    The oxide semiconductor compounds such as SnO2, In2O3, ITO, ZnO and others brought about a new attention for the metal-insulator-semiconductor structures as photovoltaic converters because of the high values of transmission and conductivity and the possibility of metal replacement in above-mentioned structures. The characteristics of the solar cells based on these oxide semiconductor compounds can be improved with conductivity increasing of the transparent semiconductor films and that is why the purpose of this paper is obtaining of F-doped tin oxide thin films, preparation of SnO2:F-Si solar cells and studying of their properties. The F-doped tin oxide thin films were prepared by spray pyrolysis technique [1-8]. This method was chosen because of the simplicity of the apparatus and relatively low cost. Aqueous solutions containing 0.1 M (TT, BTT or DTD) and 0.07 M NH4F (in the case of doping with F) have been sprayed by an atomizer on Si or glass substrates, heated up to 420 °C by maintaining the spray liquid volume, the spray time and the pressure of the carrier gas. Spray pyrolysis deposition of transparent and conductive SnO2 is a low-cost and very flexible technique applicable to solar cells. For SnO2, the drawback is that polycrystalline films are only obtained at relatively high deposition temperatures, largely above 450 °C. This constraint may cause damage to the photovoltaic junction. In the present work, it will be demonstrated that the photovoltaic parameters can be influenced by adding small amounts of hydrogen peroxide (H2O2) to the source solution.

  6. Enhanced Bactericidal Activity of Silver Thin Films Deposited via Aerosol-Assisted Chemical Vapor Deposition.

    PubMed

    Ponja, Sapna D; Sehmi, Sandeep K; Allan, Elaine; MacRobert, Alexander J; Parkin, Ivan P; Carmalt, Claire J

    2015-12-30

    Silver thin films were deposited on SiO2-barrier-coated float glass, fluorine-doped tin oxide (FTO) glass, Activ glass, and TiO2-coated float glass via AACVD using silver nitrate at 350 °C. The films were annealed at 600 °C and analyzed by X-ray powder diffraction, X-ray photoelectron spectroscopy, UV/vis/near-IR spectroscopy, and scanning electron microscopy. All the films were crystalline, and the silver was present in its elemental form and of nanometer dimension. The antibacterial activity of these samples was tested against Escherichia coli and Staphylococcus aureus in the dark and under UV light (365 nm). All Ag-deposited films reduced the numbers of E. coli by 99.9% within 6 h and the numbers of S. aureus by 99.9% within only 2 h. FTO/Ag reduced bacterial numbers of E. coli to below the detection limit after 60 min and caused a 99.9% reduction of S. aureus within only 15 min of UV irradiation. Activ/Ag reduced the numbers of S. aureus by 66.6% after 60 min and TiO2/Ag killed 99.9% of S. aureus within 60 min of UV exposure. More remarkably, we observed a 99.9% reduction in the numbers of E. coli within 6 h and the numbers of S. aureus within 4 h in the dark using our novel TiO2/Ag system. PMID:26632854

  7. RBS and PIXE analysis of chlorine contamination in ALD-Grown TiN films on silicon

    SciTech Connect

    Meersschaut, J.; Witters, T.; Kaeyhkoe, M.; Lenka, H. P.; Vandervorst, W.; Zhao, Q.; Vantomme, A.

    2013-04-19

    The performance, strengths and limitations of RBS and PIXE for the characterization of trace amounts of Cl in TiN thin films are critically compared. The chlorine atomic concentration in ALD grown TiN thin films on Si is determined for samples grown at temperatures ranging from 350 Degree-Sign C to 550 Degree-Sign C. We show that routine Rutherford backscattering spectrometry measurements (1.5 MeV He{sup +}) and PIXE measurements (1.5 MeV H{sup +}) on 20 nm thick TiN films allow one to determine the Cl content down to 0.3 at% with an absolute statistical accuracy reaching 0.03 at%. Possible improvements to push the sensitivity limit for both approaches are proposed.

  8. Effect of process parameters on properties of argon–nitrogen plasma for titanium nitride film deposition

    SciTech Connect

    Saikia, Partha; Kakati, Bharat

    2013-11-15

    In this study, the effect of working pressure and input power on the physical properties and sputtering efficiencies of argon–nitrogen (Ar/N{sub 2}) plasma in direct current magnetron discharge is investigated. The discharge in Ar/N{sub 2} is used to deposit TiN films on high speed steel substrate. The physical plasma parameters are determined by using Langmuir probe and optical emission spectroscopy. On the basis of the different reactions in the gas phase, the variation of plasma parameters and sputtering rate are explained. A prominent change of electron temperature, electron density, ion density, and degree of ionization of Ar is found as a function of working pressure and input power. The results also show that increasing working pressure exerts a negative effect on film deposition rate while increasing input power has a positive impact on the same. To confirm the observed physical properties and evaluate the texture growth as a function of deposition parameters, x-ray diffraction study of deposited TiN films is also done.

  9. X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

    SciTech Connect

    Siah, Sin Cheng E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio E-mail: buonassisi@mit.edu; Lee, Sang Woon; Gordon, Roy G.; Heo, Jaeyeong; Shibata, Tomohiro; Segre, Carlo U.

    2014-06-16

    We investigate the correlation between the atomic structures of amorphous zinc-tin-oxide (a-ZTO) thin films grown by atomic layer deposition (ALD) and their electronic transport properties. We perform synchrotron-based X-ray absorption spectroscopy at the K-edges of Zn and Sn with varying [Zn]/[Sn] compositions in a-ZTO thin films. In extended X-ray absorption fine structure (EXAFS) measurements, signal attenuation from higher-order shells confirms the amorphous structure of a-ZTO thin films. Both quantitative EXAFS modeling and X-ray absorption near edge spectroscopy (XANES) reveal that structural disorder around Zn atoms increases with increasing [Sn]. Field- and Hall-effect mobilities are observed to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron mobility may be correlated with structural changes.

  10. Studies of Niobium Thin Film Produced by Energetic Vacuum Deposition

    SciTech Connect

    Genfa Wu; Anne-Marie Valente; H. Phillips; Haipeng Wang; Andy Wu; T. J. Renk; P Provencio

    2004-05-01

    An energetic vacuum deposition system has been used to study deposition energy effects on the properties of niobium thin films on copper and sapphire substrates. The absence of working gas avoids the gaseous inclusions commonly seen with sputtering deposition. A biased substrate holder controls the deposition energy. Transition temperature and residual resistivity ratio of the niobium thin films at several deposition energies are obtained together with surface morphology and crystal orientation measurements by AFM inspection, XRD and TEM analysis. The results show that niobium thin films on sapphire substrate exhibit the best cryogenic properties at deposition energy around 123 eV. The TEM analysis revealed that epitaxial growth of film was evident when deposition energy reaches 163 eV for sapphire substrate. Similarly, niobium thin film on copper substrate shows that film grows more oriented with higher deposition energy and grain size reaches the scale of the film thickness at the deposition energy around 153 eV.

  11. Application of indium tin oxide (ITO) thin film as a low emissivity film on Ni-based alloy at high temperature

    NASA Astrophysics Data System (ADS)

    Sun, Kewei; Zhou, Wancheng; Tang, Xiufeng; Luo, Fa

    2016-09-01

    Indium tin oxide (ITO) films as the low emissivity coatings of Ni-based alloy at high temperature were studies. ITO films were deposited on the polished surface of alloy K424 by direct current magnetron sputtering. These ITO-coated samples were heat-treated in air at 600-900 °C for 150 h to explore the effect of high temperature environment on the emissivity. The samples were analyzed by X-ray diffraction (XRD), SEM and EDS. The results show that the surface of sample is integrity after heat processing at 700 °C and below it. A small amount of fine crack is observed on the surface of sample heated at 800 °C and Ti oxide appears. There are lots of fine cracks on the sample annealed at 900 °C and a large number of various oxides are detected. The average infrared emissivities at 3-5 μm and 8-14 μm wavebands were tested by an infrared emissivity measurement instrument. The results show the emissivity of the sample after annealed at 600 and 700 °C is still kept at a low value as the sample before annealed. The ITO film can be used as a low emissivity coating of super alloy K424 up to 700 °C.

  12. Electron transport and defect structure in highly conducting reactively sputtered ultrathin tin oxide films

    SciTech Connect

    Bansal, Shikha; Pandya, Dinesh K. Kashyap, Subhash C.

    2014-02-24

    Electrical conduction behavior of ultrathin (5–110 nm) SnO{sub 2} films reactively sputtered at 150–400 °C substrate temperatures is presented. The surface roughness studies revealed that the films with lower thickness were smoother (≤0.6 nm). Stoichiometry/defect structure of the films obtained from X-ray photoelectron spectroscopy data and electron mobility are found to be dependent on film thickness and substrate temperature. The observed increase in conductivity of semi-metallic films with decrease in film thickness is attributed to changes in defect structure and surface roughness. Highest value of conductivity of about 715 Ω{sup −1} cm{sup −1} is obtained for 5 nm thick films deposited at 300 °C.

  13. Reclaim System Design of Indium Tin Oxide Thin-Film Removal from Color Filters of Displays

    NASA Astrophysics Data System (ADS)

    Pa, Pai-Shan

    2008-09-01

    A newly design precision reclaim system using electrochemical machining as an etching process for indium tin oxide (ITO) thin-film removal from the color filter surface of a displays is presented. Through the ultra precise etching of the nanostructure, the semiconductor industry can effectively recycle defective products, thereby reducing production costs. A large gyration diameter of a cathode combined with a small gap width between the cathode and a workpiece takes less time for the same amount of ITO removed. An adequate feed rate of color filters combined with a sufficient electric power produces fast machining. Pulsed direct current and higher rotational speed of the cathode can improve the effects of dregs discharge and are advantageous to be combined with a high feed rate of workpieces. Electrochemical machining only requires a short time to easily and cleanly remove ITO films.

  14. The stability of tin silicon oxide thin-film transistors with different annealing temperatures

    NASA Astrophysics Data System (ADS)

    Yang, Jianwen; Fu, Ruofan; Han, Yanbing; Meng, Ting; Zhang, Qun

    2016-07-01

    The influence of annealing temperature on the electrical properties of tin silicon oxide (TSO) thin-film transistors (TFTs) and the corresponding bias stress stability have been investigated. With increasing annealing temperature, the TSO films present a structure which is closer to crystallization, and it is conducive to the improvement of the mobility of TSO TFTs. Meanwhile, the positive bias stress (PBS) stability of TSO TFTs is ameliorated due to the decreasing traps at the interface of dielectric layer and channel layer. The threshold voltage shifts in opposite direction after being stressed under negative bias stress (NBS), which is due to the competition between electrons captured by defects related to oxygen vacancies in the channel layer and water molecule adsorption on the back channel.

  15. Excimer laser deposition of hydroxyapatite thin films.

    PubMed

    Singh, R K; Qian, F; Nagabushnam, V; Damodaran, R; Moudgil, B M

    1994-06-01

    We have demonstrated a new and simple in situ method to fabricate adherent and dense hydroxyapatite (HA) coatings at relatively low deposition temperatures (500-600 degrees C). Under optimum processing conditions, the HA coatings possess a nominal Ca:P ratio of 1.65 and exhibit a fully crystalline single-phase structure. This deposition technique is based on the application of a pulsed excimer laser (wavelength lambda = 248 nm, pulse duration tau = 25 x 10(-9) s) to ablate a dense stoichiometric HA target. The HA target was prepared by standard ceramic coprecipitation techniques followed by cold pressing and further sintering at 1200 degrees C in air. High substrate temperatures (> or = 600 degrees C) during film deposition led to phosphorus deficient coatings because of re-evaporation of phosphorus during the deposition process. The stabilization of various calcium and phosphorus phases in the film was controlled by a number of process parameters such as substrate temperature, chamber pressure and presence of water vapour in the chamber. This is particularly advantageous for production of HA coatings, since it is known that HA decomposes at high temperatures due to the uncertainty in the starting material stoichiometry. Rutherford backscattering spectrometry, energy dispersive X-ray analysis, transmission electron microscopy, scanning electron microscopy and X-ray diffraction techniques were employed to determine the structure-processing relationships. Qualitative scratch measurements were conducted to determine the adhesion strength of the films.

  16. Formation of alloys upon the simultaneous electrochemical deposition of gold and tin from ethylene glycol and aqueous electrolytes

    NASA Astrophysics Data System (ADS)

    Vorobyova, T. N.; Maltanova, H. M.; Vrublevskaya, O. N.

    2016-05-01

    An ethylene glycol (EG) solution containing Au(III) and Sn(IV) compounds, and conditions for the electrochemical deposition of Au-Sn alloy based on AuSn and Au5Sn intermetallics with total tin content of 30-55 at % are proposed. Fundamental difficulties of the deposition of alloys with high tin content, (including eutectic Au-Sn alloy) from aqueous electrolytes are revealed. It is determined via voltammetry that the simultaneous deposition of gold and tin from aqueous and EG electrolytes proceeds with the depolarization effect of both Au(III) and Sn(IV) as a result of the formation of the alloy, the increase in the rate of tin cathodic reduction being more noticeable in case of EG solution. Formation of SnCl2EG(H2O) 2 + complex upon the dissolution of SnCl4 · 5H2O in glycol, the stability of the composition of tetracyanoaurate ions upon the dissolution of K[Au(CN)4], and the weakening of intermolecular interactions in EG with small amounts of water were revealed via IR spectroscopy. It is suggested that the depolarization effect is due not only to alloy formation, but also to the formation of SnCl2EG(H2O) 2 + cations, their association with Au(CN) 4 - anions, and a change in the mechanism of Au(III) and Sn(IV) reduction.

  17. Effect of active screen plasma nitriding pretreatment on wear behavior of TiN coating deposited by PACVD technique

    NASA Astrophysics Data System (ADS)

    Raoufi, M.; Mirdamadi, Sh.; Mahboubi, F.; Ahangarani, Sh.; Mahdipoor, M. S.; Elmkhah, H.

    2012-08-01

    Titanium based alloys are used extensively for improving wear properties of different parts due to their high hardness contents. Titanium nitride (TiN) is among these coatings which can be deposited on surface using various techniques such as CVD, PVD and PACVD. Their weak interface with substrate is one major drawback which can increase the total wear in spite of favorite wear behavior of TiN. Disc shaped samples from AISI H13 (DIN 1.2344) steel were prepared in this study. Single TiN coating was deposited on some of them while others have experienced a TiN deposition by active screen plasma nitriding (ASPN). Hardness at the surface and depth of samples was measured through Vickers micro hardness test which revealed 1810 Hv hardness as the maximum values for a dual-layered ASPN-TiN. Pin-on-disc wear test was done in order to study the wear mechanism. In this regard, the wear behavior of samples was investigated against pins from 100Cr6 (Din 1.3505) bearing steel and tungsten carbide-cobalt (WC-Co) steel. It was evidenced that the dual-layer ASPN-TiN coating has shown the least weight loss with the best wearing behavior because of its high hardness values, stable interface and acceptable resistance against peeling during wearing period.

  18. Grain-to-Grain Compositional Variations and Phase Segregation in Copper-Zinc-Tin-Sulfide Films.

    PubMed

    Alvarez Barragan, Alejandro; Malekpour, Hoda; Exarhos, Stephen; Balandin, Alexander A; Mangolini, Lorenzo

    2016-09-01

    We have performed a rigorous investigation of the structure and composition of individual grains in copper-zinc-tin-sulfide (CZTS) films realized by sulfurization of a sputtered metal stack. Although on average close to the ideal CZTS stoichiometry, elemental analysis shows significant grain-to-grain variations in composition. High-resolution Raman spectroscopy indicates that this is accompanied by grain-to-grain structural variations as well. The intensity from the 337 cm(-1) Raman peak, generally assigned to the kesterite phase of CZTS, remains constant over a large area of the sample. On the other hand, signals from secondary phases at 376 cm(-1) (copper-tin-sulfide) and 351 cm(-1) (zinc-sulfide) show significant variation over the same area. These results confirm the great complexity inherent to this material system. Moreover, structural and compositional variations are recognized in the literature as a factor limiting the efficiency of CZTS photovoltaic devices. This study demonstrates how a seemingly homogeneous CZTS thin film can actually have considerable structural and compositional variations at the microscale, and highlights the need for routine microscale characterization in this material system. PMID:27538122

  19. Silicon carbide and other films and method of deposition

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2007-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  20. Silicon carbide and other films and method of deposition

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy (Inventor)

    2011-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  1. Optoelectronics and formaldehyde sensing properties of tin-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Prajapati, C. S.; Kushwaha, Ajay; Sahay, P. P.

    2013-11-01

    Sn-doped ZnO thin films were deposited on clean glass substrates using the chemical spray pyrolysis technique. XRD analyses confirm stable ZnO hexagonal wurtzite structure of the films with crystallite size in the range of 20-28 nm. The surface roughness of the films increases on Sn doping, which favors to higher adsorption of oxygen species on the film surface, resulting in higher gas response. Optical studies reveal that the band gap decreases on Sn doping. All the films show near band edge emission, and on Sn doping the luminescence peak intensity has been found to increase. Photocurrent in the 1.5 at.% doped film enhances about three times to that observed in the undoped ZnO film. Among all the films examined, the 1.5 at.% Sn-doped film exhibits the maximum response (˜94.5 %) at the operating temperature of 275 °C for 100 ppm concentration of formaldehyde, which is much higher than the response (˜35 %) in the undoped film. The gas response of the film is attributed to the chemisorption of oxygen on the film surface and the subsequent reaction between the adsorbed oxygen species and the formaldehyde molecules.

  2. Fluorine doped tin oxide (FTO) thin film as transparent conductive oxide (TCO) for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Muthukumar, Anusha; Rey, Germain; Giusti, Gael; Consonni, Vincent; Appert, Estelle; Roussel, Hervé; Dakshnamoorthy, Arivuoli; Bellet, Daniel

    2013-02-01

    Textured FTO thin films were deposited on corning glass substrates at 420°C by ultrasonic spray pyrolysis method. The electrical, optical and structural properties of the prepared functional FTO thin films were investigated. Homogeneous textured columnar grain morphology was observed through FESEM. As prepared thin films exhibits polycrystalline cassiterite structure with preferred orientation along (200). FTO is a promising TCO as front electrodes of thin film solar cells because of their good electrical properties (4.3×10-4ω.cm) combined with high transmission properties (86%).

  3. Characterization of ZnO film grown on polycarbonate by atomic layer deposition at low temperature

    SciTech Connect

    Lee, Gyeong Beom; Han, Gwon Deok; Shim, Joon Hyung; Choi, Byoung-Ho

    2015-01-15

    ZnO is an attractive material for use in various technological products such as phosphors, gas sensors, and transparent conductors. Recently, aluminum-doped zinc oxide has received attention as a potential replacement for indium tin oxide, which is one of the transparent conductive oxides used in flat panel displays, organic light-emitting diodes, and organic solar cells. In this study, the characteristics of ZnO films deposited on polycarbonate (PC) substrates by atomic layer deposition (ALD) are investigated for various process temperatures. The growth mechanism of these films was investigated at low process temperatures using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). XRD and XPS were used to determine the preferred orientation and chemical composition of the films, respectively. Furthermore, the difference of the deposition mechanisms on an amorphous organic material, i.e., PC substrate and an inorganic material such as silicon was discussed from the viewpoint of the diffusion and deposition of precursors. The structure of the films was also investigated by chemical analysis in order to determine the effect of growth temperature on the films deposited by ALD.

  4. Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells

    SciTech Connect

    Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen

    2011-11-15

    In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

  5. Synthesis of Tin Nitride SnxNyNanowires by Chemical Vapour Deposition

    PubMed Central

    2009-01-01

    Tin nitride (SnxNy) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH4Cl at 450 °C under a steady flow of NH3. The SnxNynanowires have an average diameter of 200 nm and lengths ≥5 μm and were grown on Si(111) coated with a few nm’s of Au. Nitridation of Sn alone, under a flow of NH3is not effective and leads to the deposition of Sn droplets on the Au/Si(111) surface which impedes one-dimensional growth over a wide temperature range i.e. 300–800 °C. This was overcome by the addition of ammonium chloride (NH4Cl) which undergoes sublimation at 338 °C thereby releasing NH3and HCl which act as dispersants thereby enhancing the vapour pressure of Sn and the one-dimensional growth of SnxNynanowires. In addition to the action of dispersion, Sn reacts with HCl giving SnCl2which in turn reacts with NH3leading to the formation of SnxNyNWs. A first estimate of the band-gap of the SnxNynanowires grown on Si(111) was obtained from optical reflection measurements and found to be ≈2.6 eV. Finally, intricate assemblies of nanowires were also obtained at lower growth temperatures. PMID:20596341

  6. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, B.E.; McLean, W. II

    1996-02-13

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  7. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, Bruce E.; McLean, II, William

    1996-01-01

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  8. Substrate heater for thin film deposition

    DOEpatents

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  9. Tuning electrical properties in amorphous zinc tin oxide thin films for solution processed electronics.

    PubMed

    Chandra, R Devi; Rao, Manohar; Zhang, Keke; Prabhakar, Rajiv Ramanujam; Shi, Chen; Zhang, Jie; Mhaisalkar, Subodh G; Mathews, Nripan

    2014-01-22

    Solution processed zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated by varying the Zn/Sn composition. The addition of Sn to the zinc oxide (ZnO) films resulted in improved electrical characteristics, with devices of Zn0.7Sn0.3O composition showing the highest mobility of 7.7 cm(2)/(V s). An improvement in subthreshold swings was also observed, indicative of a reduction of the interfacial trap densities. Mobility studies at low temperature have been carried out, which indicated that the activation energy was reduced with Sn incorporation. Kelvin probe force microscopy was performed on the films to evaluate work function and correlated to the metal-semiconductor barrier indicating Zn0.7Sn0.3O films had the smallest barrier for charge injection. Organic-inorganic hybrid complementary inverters with a maximum gain of 10 were fabricated by integrating ZTO TFTs with poly-3-hexylthiophene (P3HT) transistors. PMID:24380364

  10. Fiber textures of titanium nitride and hafnium nitride thin films deposited by off-normal incidence magnetron sputtering

    SciTech Connect

    Deniz, D.; Harper, J. M. E.

    2008-09-15

    We studied the development of crystallographic texture in titanium nitride (TiN) and hafnium nitride (HfN) films deposited by off-normal incidence reactive magnetron sputtering at room temperature. Texture measurements were performed by x-ray pole figure analysis of the (111) and (200) diffraction peaks. For a deposition angle of 40 deg. from substrate normal, we obtained TiN biaxial textures for a range of deposition conditions using radio frequency (rf) sputtering. Typically, we find that the <111> orientation is close to the substrate normal and the <100> orientation is close to the direction of the deposition source, showing substantial in-plane alignment. We also introduced a 150 eV ion beam at 55 deg. with respect to substrate normal during rf sputtering of TiN. Ion beam enhancement caused TiN to align its out-of-plane texture along <100> orientation. In this case, (200) planes are slightly tilted with respect to the substrate normal away from the ion beam source, and (111) planes are tilted 50 deg. toward the ion beam source. For comparison, we found that HfN deposited at 40 deg. without ion bombardment has a strong <100> orientation parallel to the substrate normal. These results are consistent with momentum transfer among adatoms and ions followed by an increase in surface diffusion of the adatoms on (200) surfaces. The type of fiber texture results from a competition among texture mechanisms related to surface mobilities of adatoms, geometrical, and directional effects.

  11. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Karakaya, Seniye; Ozbas, Omer

    2015-02-01

    ZnO is an II-VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO2) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200-1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.

  12. Preparation and properties of tin-doped indium oxide thin films by thermal decomposition of organometallic compounds

    SciTech Connect

    Furusaki, T.; Kodaira, K.; Yamamoto, M.; Shimada, S.; Matsushita, T.

    1986-08-01

    Transparent and conductive tin-doped indium oxide thin films were prepared on soda-lime and quartz glass substrates by thermal decomposition of organometallic compounds. The optical transmittance of the films was 90% in the visible region. The electric resistivity changed from 6-8 x 10/sup 3-/ ..cap omega..-cm to 3-4 x 10/sup -2/ ..cap omega..-cm, depending on composition and, after annealing in vacuum, it decreased by a factor of 2-10.

  13. Hybrid films with graphene oxide and metal nanoparticles could now replace indium tin oxide.

    PubMed

    Varela-Rizo, Helena; Martín-Gullón, Ignacio; Terrones, Mauricio

    2012-06-26

    Graphene oxide (G-O), a highly oxidized sheet of sp(2)-hybridized carbon with insulating electrical properties, can be transformed into graphene if it is adequately reduced. In the past, researchers believed that reduced G-O (rG-O) could be highly conducting, but it has been shown that the presence of extended vacancies and defects within rG-O negatively affect its electrical transport. Although these observations indicated that rG-O could not be used in the fabrication of any electronic device, in this issue of ACS Nano, Ruoff's group demonstrates that rG-O can indeed be used for producing efficient transparent conducting films (TCFs) if the rG-O material is coupled with Au nanoparticles (Au-NPs) and Ag nanowires (Ag-NWs). The work further demonstrates that these hybrid films containing zero-dimensional (Au-NPs), one-dimensional (Ag-NWs), and two-dimensional (rG-O) elements exhibit high optical transmittance (e.g., 90%) and low sheet resistance (20-30 Ω/□), with values comparable to those of indium tin oxide (ITO) films. In addition, Ruoff's group notes that the presence of Ag-NWs and rG-O in the films showed antibacterial properties, thus demonstrating that it is now possible to produce flexible TCFs with bactericidal functions. The data show that smart hybrid films containing rG-O and different types of NPs and NWs could be synthesized easily and could result in smart films with unprecedented functions and applications.

  14. Effective contact resistance of zinc-tin oxide-based thin film transistors.

    PubMed

    Kang, Youjin; Han, Dongsuk; Park, Jaehyung; Shin, Sora; Choi, Duckkyun; Park, Jongwan

    2014-11-01

    We investigated different source/drain (S/D) electrode materials in thin-film transistors (TFTs) based on amorphous zinc-tin oxide (ZTO) semiconductors. The transfer length, channel conductance, and effective contact resistance between the S/D electrodes and the a-ZTO channel layer were examined. Total ON resistance (R(T)), transfer length (L(T)) and effective contact resistance (R(c-eff)) were extracted by the well-known transmission-line method (TLM) using a series of TFTs with different channel lengths. When the width of ZTO channel layer was fixed as 50 μm, the lengths were varying from 10 to 50 μm. The channel layer and S/D electrode were defined by lift-off process and for the S/D electrodes, indium-tin oxide (ITO), Cu, and Mo were used. The resistivity and work function values of electrode materials were considered when selected as candidates for S/D electrodes of ZTO-TFTs. The results showed that the ZTO-TFTs with Mo S/D electrodes had the lowest effective contact resistance indicating that ZTO-TFTs with Mo electrodes have better electrical performance compared to others. PMID:25958489

  15. Theoretical modeling of a self-referenced dual mode SPR sensor utilizing indium tin oxide film

    NASA Astrophysics Data System (ADS)

    Srivastava, Sachin K.; Verma, Roli; Gupta, Banshi D.

    2016-06-01

    A prism based dual mode SPR sensor was theoretically modeled to work as a self-referenced sensor in spectral interrogation scheme. Self-referenced sensing was achieved by sandwiching an indium tin oxide thin film in between the prism base and the metal layer. The proposed sensor possesses two plasmon modes similar to long and short range SPRs (LR- and SR-SPRs) and we have analogically used LRSPR and SRSPR for them. However, these modes do not possess usual long range character due to the losses introduced by the imaginary part of indium tin oxide (ITO) dielectric function. One of the two plasmon modes responds to change in analyte refractive index while the other remains fixed. The influence of various design parameters on the performance of the sensor was evaluated. The performance of the proposed sensor was compared, via control simulations, with established dual mode geometries utilizing silicon dioxide (SiO2), Teflon AF-1600 and Cytop. The design parameters of the established geometries were optimized to obtain self-referenced sensing operation. Trade-offs between the resonance spectral width, minimum reflectivity, shift in resonance wavelength and angle of incidence were examined for optimal design. The present study will be useful in the fabrication of self-referenced sensors where the ambient conditions are not quite stable.

  16. Defect analysis and mechanical performance of plasma-deposited thin films on flexible polycarbonate substrates

    NASA Astrophysics Data System (ADS)

    Patel, Rakhi P.; Wolden, Colin A.

    2013-03-01

    A simple solvent-etch based technique is developed to visualize and quantify defects in transparent thin films deposited on flexible polymer substrates. This approach is used to characterize defects in as-deposited films and to monitor their evolution as a function of applied and repetitive bending. Thin films investigated include sputtered indium tin oxide (ITO) and alumina-silicone nanolaminates fabricated by plasma-enhanced chemical vapor deposition. It is shown that the use of nanolaminate architectures reduces the defect density by two orders of magnitude relative to a single alumina layer. The pinhole density increases when nanolaminates are subjected to applied stress, and at a critical density of ˜10/mm2 the isolated defects coalesce into macroscopic cracks. In the case of ITO an optimum film thickness is identified that balances electronic performance with mechanical integrity. Conductivity correlates with defect density, and the films displayed very similar performance under tensile and compressive strain. A critical radius of curvature of 0.75 in. was identified, but films cycled below the threshold strain demonstrated robust performance, with only negligible changes in resistivity through 2000 bending cycles. The strong performance under strain is attributed to the amorphous nature of the sputtered ITO.

  17. Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

    NASA Astrophysics Data System (ADS)

    Nishimura, Tomonori; Xu, Lun; Shibayama, Shigehisa; Yajima, Takeaki; Migita, Shinji; Toriumi, Akira

    2016-08-01

    We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO2. Ferroelectric properties of nondoped HfO2 in TiN/HfO2/TiN stacks are shown in capacitance–voltage and polarization–voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO2 clearly appears by thinning HfO2 film down to ∼35 nm. We directly revealed in thermal treatments that the ferroelectric HfO2 film on TiN was maintained by covering the top surface of HfO2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO2. Thus, it is concluded that the ferroelectricity in nondoped HfO2 in this study was mainly driven by both of top and bottom TiN interfaces.

  18. Characterization of ZnO:SnO2 (50:50) thin film deposited by RF magnetron sputtering technique

    NASA Astrophysics Data System (ADS)

    Cynthia, S. R.; Sivakumar, R.; Sanjeeviraja, C.; Ponmudi, S.

    2016-05-01

    Zinc oxide (ZnO) and tin oxide (SnO2) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO2 (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  19. Decrease in work function of transparent conducting ZnO tin films by phosphorus ion implantation.

    PubMed

    Heo, Gi-Seok; Hong, Sang-Jin; Park, Jong-Woon; Choi, Bum-Ho; Lee, Jong-Ho; Shin, Dong-Chan

    2008-09-01

    To confirm the possibility of engineering the work function of ZnO thin films, we have implanted phosphorus ions into ZnO thin films deposited by radio-frequency magnetron sputtering. The fabricated films show n-type characteristics. It is shown that the electrical and optical properties of those thin films vary depending sensitively on the ion dose and rapid thermal annealing time. Compared to as-deposited ZnO films, the work-function of phosphorus ion-implanted ZnO thin films is observed to be lower and decreases with increasing ion doses. It is likely that the zinc or oxygen vacancies are firstly filled with the implanted phosphorus ions. With further increased ions, free electrons are generated as Zn2+ sites are replaced by those ions or interstitial phosphorus ions increase at the lattice sites, the fermi level by which approaches the conduction band and thus the work function decreases. Those films exhibit the optical transmittance higher than 85% within the visible wavelength range (up to 800 nm).

  20. High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition

    SciTech Connect

    Anders, Andre; Lim, Sunnie H.N.; Yu, Kin Man; Andersson, Joakim; Rosen, Johanna; McFarland, Mike; Brown, Jeff

    2009-04-24

    Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.

  1. Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular Passivation

    SciTech Connect

    Rajachidambaram, Meena Suhanya; Pandey, Archana; Vilayur Ganapathy, Subramanian; Nachimuthu, Ponnusamy; Thevuthasan, Suntharampillai; Herman, Gregory S.

    2013-10-21

    The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFT) have been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid (n-HPA) when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies.

  2. Laser Direct Ablation of Indium Tin Oxide Films on Both Sides of Various Substrates.

    PubMed

    Oh, Gi Taek; Kwon, Sang Jik; Han, Jae-Hee; Cho, Eou Sik

    2015-03-01

    We demonstrate ablation of indium tin oxide (ITO) films onto both glass and polyethylene terephthalate (PET) substrates, using a Q-switched diode-pumped neodymium-doped yttrium vanadate laser (Nd:YVO4, λ = 1064 nm) incident on both the front and back sides of the substrate. From scanning electron microscope (SEM) images and depth profile data, ITO patterns that were laser-ablated onto glass from the back side showed a larger abrupt change in the ablated line width than those ablated from the front. However, there were only slight differences in ablated line widths due to the direction of the incident laser beam. We provide a possible explanation in terms of several factors: dispersion of laser beam energy through the substrate, overlapping of each laser beam spot due to scanning speed, and the thickness of glass and PET substrates. PMID:26413678

  3. Sensitivity and Response of Polyvinyl Alcohol/Tin Oxide Nanocomposite Multilayer Thin Film Sensors.

    PubMed

    Sriram, G; Dhineshbabu, N R; Nithyavathy, N; Saminathan, K; Kaler, K V I S; Rajendran, V

    2016-01-01

    Nanocrystalline Tin Oxide (SnO₂) is Non-Stoichiometric in Nature with Functional Properties Suitable for gas sensing. In this study, SnO₂nanoparticles were prepared by the sol-gel technique, which were then characterised using X-ray diffraction. The nanoparticles showed tetragonal structure with an average crystallite size of 18 nm. The stretching and vibration modes of SnO₂were confirmed using Fourier transform infrared spectroscopy. The size of SnO₂ nanoparticles was determined using particle size analyser, which was found be 60 ± 10 nm on average. The surface morphology of the nanoparticles was investigated using scanning electron microscope, which showed irregular-sized agglomerated SnO₂nanostructures. In addition, primary particle size was evaluated using high-resolution transmission electron microscopy, which was found to be 50 nm on average. The polyvinyl alcohol/SnO₂ composite thin film was prepared on a glass substrate using spin-coating method. The values of band gap energy and electrical conductance of 13-layer thin film were found to be 2.96 eV and 0.0505 mho, respectively. Sulfur dioxide (SO₂) was suitably tailored to verify the sensor response over a concentration range of 10-70 ppm at room temperature. The performance, response, and recovery time of sensors were increased by increasing the layers of the thin film. PMID:27398561

  4. THz behavior of indium-tin-oxide films on p-Si substrates

    SciTech Connect

    Brown, E. R. Zhang, W-D.; Chen, H.; Mearini, G. T.

    2015-08-31

    This paper reports broadband THz free-space transmission measurements and modeling of indium-tin-oxide (ITO) thin films on p-doped Si substrates. Two such samples having ITO thickness of 50 and 100 nm, and DC sheet conductance 260 and 56 Ω/sq, respectively, were characterized between 0.2 and 1.2 THz using a frequency-domain spectrometer. The 50-nm-film sample displayed very flat transmittance over the 1-THz bandwidth, suggesting it is close to the critical THz sheet conductance that suppresses multi-pass interference in the substrate. An accurate transmission-line-based equivalent circuit is developed to explain the effect, and then used to show that the net reflectivity and absorptivity necessarily oscillate with frequency. This has important implications for the use of thin-film metallic coupling layers on THz components and devices, such as detectors and sources. Consistent with previous reported results, the sheet conductance that best fits the THz transmittance data is roughly 50% higher than the DC values for both samples.

  5. Physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2015-09-01

    This paper presents the physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing. The thin films of thickness 500 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing thermal vacuum evaporation technique followed by post-deposition thermal annealing at temperature 450 °C. These films were subjected to the X-ray diffraction (XRD),UV-Vis spectrophotometer, source meter and atomic force microscopy (AFM) for structural, optical, electrical and surface morphological analysis respectively. The X-ray diffraction patterns reveal that the films have zinc-blende structure of single cubic phase with preferred orientation (111) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in brief. The optical band gap is found to be 1.62 eV and 1.52 eV for as-grown and annealed films respectively. The I-V characteristics show that the conductivity is decreased for annealed thin films. The AFM studies reveal that the surface roughness is observed to be increased for thermally annealed films.

  6. Fabrication of Transparent p-Type CuxZnyS Thin Films by the Electrochemical Deposition Method

    NASA Astrophysics Data System (ADS)

    Yang, Kai; Ichimura, Masaya

    2011-04-01

    CuxZnyS thin films were deposited on indium-tin oxide-coated glass substrates by the electrochemical deposition (ECD) method using aqueous solutions containing CuSO4, ZnSO4, and Na2S2O3. The film deposited under optimum conditions exhibited a high optical transmission, and its energy band gap was about 3.2 eV. It was confirmed that CuxZnyS showed p-type conduction and photosensitivity. To fabricate a ZnO/CuxZnyS heterojunction, an n-type ZnO thin film was deposited on CuxZnyS by ECD. In a current-voltage measurement, the heterojunction showed rectification properties.

  7. An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

    SciTech Connect

    Rein, M. H.; Holt, A. O.; Hohmann, M. V.; Klein, A.; Thogersen, A.; Mayandi, J.; Monakhov, E. V.

    2013-01-14

    The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both after 2 and 10 s of deposition. In addition, the silicon oxide layer at the interface is shown to be composed of mainly silicon suboxides rather than silicon dioxide.

  8. Electro-deposition of superconductor oxide films

    SciTech Connect

    Bhattacharya, Raghu N.

    2001-01-01

    Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.

  9. The influence of Atomic Oxygen on the Figure of Merit of Indium Tin Oxide thin Films grown by reactive Dual Ion Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Geerts, Wilhelmus; Simpson, Nelson; Woodall, Allen; Compton, Maclyn

    2014-03-01

    Indium Tin Oxide (ITO) is a transparent conducting oxide that is used in flat panel displays and optoelectronics. Highly conductive and transparent ITO films are normally produced by heating the substrate to 300 Celsius during deposition excluding plastics to be used as a substrate material. We investigated whether high quality ITO films can be sputtered at room temperature using atomic instead of molecular oxygen. The films were deposited by dual ion beam sputtering (DIBS). During deposition the substrate was exposed to a molecular or an atomic oxygen flux. Microscope glass slides and silicon wafers were used as substrates. A 29 nm thick SIO2 buffer layer was used. Optical properties were measured with a M2000 Woollam variable angle spectroscopic ellipsometer. Electrical properties were measured by linear four point probe using a Jandel 4pp setup employing silicon carbide electrodes, high input resistance, and Keithley low bias current buffer amplifiers. The figure of merit (FOM), i.e. the ratio of the conductivity and the average optical absorption coefficient (400-800 nm), was calculated from the optical and electric properties and appeared to be 1.2 to 5 times higher for the samples sputtered with atomic oxygen. The largest value obtained for the FOM was 0.08 reciprocal Ohms. The authors would like to thank the Research Corporation for Financial Support.

  10. Surface plasmon resonance study on the optical sensing properties of tin oxide (SnO2) films to NH3 gas

    NASA Astrophysics Data System (ADS)

    Paliwal, Ayushi; Sharma, Anjali; Tomar, Monika; Gupta, Vinay

    2016-04-01

    Surface plasmon resonance (SPR) technique is an easy and reliable method for detecting very low concentration of toxic gases at room temperature using a gas sensitive thin film layer. In the present work, a room temperature operated NH3 gas sensor has been developed using a laboratory assembled SPR measurement setup utilising a p-polarized He-Ne laser and prism coupling technique. A semiconducting gas sensitive tin oxide (SnO2) layer has been deposited under varying growth conditions (i.e., by varying deposition pressure) over the gold coated prism (BK-7) to excite the surface plasmon modes in Kretschmann configuration. The SPR reflectance curves for prism/Au/SnO2/air system for SnO2 thin films prepared at different sputtering pressure were measured, and the SnO2 film deposited at 10 mT pressure is found to exhibit a sharp SPR reflectance curve with minimum reflectance (0.32) at the resonance angle of 44.7° which is further used for sensing NH3 gas of different concentration at room temperature. The SPR reflectance curve shows a significant shift in resonance angle from 45.05° to 58.55° on interacting with NH3. The prepared sensor is found to give high sensing response (0.11) with high selectivity towards very low concentration of NH3 (0.5 ppm) and quick response time at room temperature.

  11. A new membrane electro-deposition based process for tin recovery from waste printed circuit boards.

    PubMed

    Jian-Guang, Yang; Jie, Lei; Si-Yao, Peng; Yuan-Lu, Lv; Wei-Qiang, Shi

    2016-03-01

    The current research investigated a process combining leaching, purification and membrane electrodeposition to recover tin from the metal components of WPCBs. Experimental results showed that with a solid liquid ratio of 1:4, applying 1.1 times of stoichiometric SnCl4 dosage and HCl concentration of 3.5-4.0 mol/L at a temperature of 60-90°C, 99% of tin can be leached from the metal components of WPCBs. The suitable purification conditions were obtained in the temperature range of 30-45°C with the addition of 1.3-1.4 times of the stoichiometric quantity of tin metal and stirring for a period of 1-2h; followed by adding 1.3 times of the stoichiometric quantity of Na2S for sulfide precipitation about 20-30 min at room temperature. The purified solution was subjected to membrane electrowinning for tin electrodeposition. Under the condition of catholyte Sn(2+) 60 g/L, HCl 3 mol/L and NaCl 20 g/L, current density 200 A/m(2) and temperature 35°C, a compact and smooth cathode tin layer can be obtained. The obtained cathode tin purity exceeded 99% and the electric consumption was less than 1200 kW h/t. The resultant SnCl4 solution generated in anode compartment can be reused as leaching agent for leaching tin again. PMID:26595900

  12. A new membrane electro-deposition based process for tin recovery from waste printed circuit boards.

    PubMed

    Jian-Guang, Yang; Jie, Lei; Si-Yao, Peng; Yuan-Lu, Lv; Wei-Qiang, Shi

    2016-03-01

    The current research investigated a process combining leaching, purification and membrane electrodeposition to recover tin from the metal components of WPCBs. Experimental results showed that with a solid liquid ratio of 1:4, applying 1.1 times of stoichiometric SnCl4 dosage and HCl concentration of 3.5-4.0 mol/L at a temperature of 60-90°C, 99% of tin can be leached from the metal components of WPCBs. The suitable purification conditions were obtained in the temperature range of 30-45°C with the addition of 1.3-1.4 times of the stoichiometric quantity of tin metal and stirring for a period of 1-2h; followed by adding 1.3 times of the stoichiometric quantity of Na2S for sulfide precipitation about 20-30 min at room temperature. The purified solution was subjected to membrane electrowinning for tin electrodeposition. Under the condition of catholyte Sn(2+) 60 g/L, HCl 3 mol/L and NaCl 20 g/L, current density 200 A/m(2) and temperature 35°C, a compact and smooth cathode tin layer can be obtained. The obtained cathode tin purity exceeded 99% and the electric consumption was less than 1200 kW h/t. The resultant SnCl4 solution generated in anode compartment can be reused as leaching agent for leaching tin again.

  13. Experimental study on TiN coated racetrack-type ceramic pipe

    NASA Astrophysics Data System (ADS)

    Wang, Jie; Xu, Yan-Hui; Zhang, Bo; Wei, Wei; Fan, Le; Pei, Xiang-Tao; Hong, Yuan-Zhi; Wang, Yong

    2015-11-01

    TiN film was coated on the internal surface of a racetrack-type ceramic pipe by three different methods: radio-frequency sputtering, DC sputtering and DC magnetron sputtering. The deposition rates of TiN film under different coating methods were compared. The highest deposition rate was 156 nm/h, which was obtained by magnetron sputtering coating. Based on AFM, SEM and XPS test results, the properties of TiN film, such as film roughness and surface morphology, were analyzed. Furthermore, the deposition rates were studied with two different cathode types, Ti wires and Ti plate. According to the SEM test results, the deposition rate of TiN/Ti film was about 800 nm/h with Ti plate cathode by DC magnetron sputtering. Using Ti plate cathode rather than Ti wire cathode can greatly improve the film deposition rate. Supported by National Nature Science Foundation of China (11075157)

  14. Electrophoretically-deposited solid film lubricants

    SciTech Connect

    Dugger, M.T.; Panitz, J.K.J.; Vanecek, C.W.

    1995-04-01

    An aqueous-based process that uses electrophoresis to attract powdered lubricant in suspension to a charged target was developed. The deposition process yields coatings with low friction, complies with environmental safety regulations, requires minimal equipment, and has several advantages over processes involving organic binders or vacuum techniques. This work focuses on development of the deposition process, includes an analysis of the friction coefficient of the material in sliding contact with stainless steel under a range of conditions, and a functional evaluation of coating performance in a precision mechanical device application. Results show that solid lubricant films with friction coefficients as low as 0.03 can be produced. A 0.03 friction coefficient is superior to solid lubricants with binder systems and is comparable to friction coefficients generated with more costly vacuum techniques.

  15. Electrochromic properties of spray deposited TiO 2-doped WO 3 thin films

    NASA Astrophysics Data System (ADS)

    Patil, P. S.; Mujawar, S. H.; Inamdar, A. I.; Sadale, S. B.

    2005-08-01

    TiO 2-doped WO 3 thin films were deposited onto fluorine-doped tin oxide coated conducting glass substrates using spray pyrolysis technique at 525 °C. The volume percentage of TiO 2 dopant was varied from 13% to 38%. The thin film samples were transparent, uniform and strongly adherent to the substrates. Electrochromical properties of TiO 2-doped WO 3 thin films were studied with the help of cyclic voltammetry (CV), chronoamperometry (CA) and chronocoulometry (CC) techniques. It has been found that TiO 2 doping in WO 3 enhances its electrochromic performance. Colouration efficiency becomes almost double and samples exhibit increasingly high reversibility with TiO 2 doping concentrations, in the studied range.

  16. A study on linear and non-linear optical constants of Rhodamine B thin film deposited on FTO glass

    NASA Astrophysics Data System (ADS)

    Yahia, I. S.; Jilani, Asim; Abutalib, M. M.; AlFaify, S.; Shkir, M.; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; El-Naggar, A. M.

    2016-06-01

    The aim of this research was to fabricate/deposit the good quality thin film of Rhodamine B dye on fluorine doped tin oxide glass substrate by the low cost spin coating technique and study their linear and nonlinear optical parameters. The thickness of the thin film was measured about 300 nm with alpha step system. The transmittance of the fabricated thin film was found to be above 75% corresponding to the fluorine doped tin oxide layer. The structural analysis was performed with X-rays diffraction spectroscopy. Atomic force microscope showed the topographic image of deposited thin film. Linear optical constant like absorption coefficient, band gap, and extinction index was calculated. The dielectric constant was calculated to know the optical response of Rhodamine B dye over fluorine doped tin oxide substrate. The nonlinear optical constant like linear optical susceptibility χ(1), nonlinear optical susceptibility χ(3), nonlinear refractive index (n2) were calculated by spectroscopic method. This method has advantage over the experimental method like Z-Scan for organic dye base semiconductors for future advance optoelectronics applications like dye synthesis solar cell.

  17. Characterization of Amorphous Zinc Tin Oxide Semiconductors

    SciTech Connect

    Rajachidambaram, Jaana Saranya; Sanghavi, Shail P.; Nachimuthu, Ponnusamy; Shutthanandan, V.; Varga, Tamas; Flynn, Brendan T.; Thevuthasan, Suntharampillai; Herman, Gregory S.

    2012-06-12

    Amorphous zinc tin oxide (ZTO) was investigated to determine the effect of deposition and post annealing conditions on film structure, composition, surface contamination, and thin film transistor (TFT) device performance. X-ray diffraction results indicated that the ZTO films remain amorphous even after annealing to 600 °C. We found that the bulk Zn:Sn ratio of the sputter deposited films were slightly tin rich compared to the composition of the ceramic sputter target, and there was a significant depletion of zinc at the surface. X-ray photoelectron spectroscopy also indicated that residual surface contamination depended strongly on the sample post-annealing conditions where water, carbonate and hydroxyl species were absorbed to the surface. Electrical characterization of ZTO films, using TFT test structures, indicated that mobilities as high as 17 cm2/Vs could be obtained for depletion mode devices.

  18. Effects of complexing agents on electrochemical deposition of FeS x O y thin films

    NASA Astrophysics Data System (ADS)

    Supee, Aizuddin; Ichimura, Masaya

    2016-08-01

    FeS x O y thin films were deposited on indium-tin-oxide (ITO)-coated glass substrates at 15 °C via galvanostatic electrochemical deposition from an aqueous solution containing 100 mM Na2S2O3 and 30 mM FeSO4. The effects of l(+)-tartaric acid (C4H4O6) and lactic acid [CH3CH(OH)COOH] at different concentrations were investigated. All the deposited films were amorphous. With the complexing agents, the thickness was increased, and the oxygen content was reduced significantly compared with the sample deposited without the complexing agents. In the photoelectrochemical measurement, p-type conductivity was confirmed. The photoresponsivity was not influenced significantly by the complexing agent, suggesting that the oxygen content does not drastically affect the properties of the deposited films probably because the local bonding configuration around Fe atoms in FeS x O y is similar to that in FeS2.

  19. Effects of complexing agents on electrochemical deposition of FeS x O y thin films

    NASA Astrophysics Data System (ADS)

    Supee, Aizuddin; Ichimura, Masaya

    2016-08-01

    FeS x O y thin films were deposited on indium–tin-oxide (ITO)-coated glass substrates at 15 °C via galvanostatic electrochemical deposition from an aqueous solution containing 100 mM Na2S2O3 and 30 mM FeSO4. The effects of l(+)-tartaric acid (C4H4O6) and lactic acid [CH3CH(OH)COOH] at different concentrations were investigated. All the deposited films were amorphous. With the complexing agents, the thickness was increased, and the oxygen content was reduced significantly compared with the sample deposited without the complexing agents. In the photoelectrochemical measurement, p-type conductivity was confirmed. The photoresponsivity was not influenced significantly by the complexing agent, suggesting that the oxygen content does not drastically affect the properties of the deposited films probably because the local bonding configuration around Fe atoms in FeS x O y is similar to that in FeS2.

  20. Conductive properties of transparent Ni-In-Zn-O films deposited by combinatorial RF magnetron cosputtering

    NASA Astrophysics Data System (ADS)

    Oh, Jeung Pyo; Kim, Eun Mi; Jeong, Hyeon Taek; Choi, In Seok; Cha, Sang-Jun; Kim, Young-Baek; Lee, Jong-Ho; Woo, Jeong Ju; Heo, Gi-Seok

    2014-12-01

    The electrical, optical, and structural properties of cosputtered Ni-In-Zn-O films deposited on a flexible poly(ether sulfone) (PES) substrate were investigated by a combinatorial technique. The X-ray diffraction results showed that amorphous Ni-In-Zn-O films were deposited regardless of the Ni content [Ni/(Ni + In + Zn), at. %] in the range of 8.5-45.6 at. %. The surface of the amorphous Ni-In-Zn-O films was quite smooth. The obtained surface roughness (RRMS) values ranged from 0.7 to 1.5 nm. A high resistivity of 5.2 × 10-4 Ω cm and an average transmittance of 88% in the visible wavelength range were obtained for a Ni-In-Zn-O film with an elemental composition ratio of 10.5/73.8/15.7 at. % (Ni/In/Zn). The In content could be reduced by as much as -10 at. % compared with that of commercial indium tin oxide (ITO) while retaining a similar resistivity of -10-4 Ω cm. The measured work functions ranged from 4.84 to 5.02 eV, which are higher than those for ITO films. These findings indicated that Ni-In-Zn-O films grown by RF magnetron sputtering are promising for use as flexible transparent conducting electrodes owing to their low resistivity, high optical transmittance, and high work function.

  1. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1980-01-01

    Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

  2. Real-Time Deposition Monitor for Ultrathin Conductive Films

    NASA Technical Reports Server (NTRS)

    Hines, Jacqueline

    2011-01-01

    A device has been developed that can be used for the real-time monitoring of ultrathin (2 or more) conductive films. The device responds in less than two microseconds, and can be used to monitor film depositions up to about 60 thick. Actual thickness monitoring capability will vary based on properties of the film being deposited. This is a single-use device, which, due to the very low device cost, can be disposable. Conventional quartz/crystal microbalance devices have proven inadequate to monitor the thickness of Pd films during deposition of ultrathin films for hydrogen sensor devices. When the deposited film is less than 100 , the QCM measurements are inadequate to allow monitoring of the ultrathin films being developed. Thus, an improved, high-sensitivity, real-time deposition monitor was needed to continue Pd film deposition development. The new deposition monitor utilizes a surface acoustic wave (SAW) device in a differential delay-line configuration to produce both a reference response and a response for the portion of the device on which the film is being deposited. Both responses are monitored simultaneously during deposition. The reference response remains unchanged, while the attenuation of the sensing path (where the film is being deposited) varies as the film thickness increases. This device utilizes the fact that on high-coupling piezoelectric substrates, the attenuation of an SAW undergoes a transition from low to very high, and back to low as the conductivity of a film on the device surface goes from nonconductive to highly conductive. Thus, the sensing path response starts with a low insertion loss, and as a conductive film is deposited, the film conductivity increases, causing the device insertion loss to increase dramatically (by up to 80 dB or more), and then with continued film thickness increases (and the corresponding conductivity increases), the device insertion loss goes back down to the low level at which it started. This provides a

  3. Laser direct patterning of indium tin oxide for defining a channel of thin film transistor.

    PubMed

    Wang, Jian-Xun; Kwon, Sang Jik; Han, Jae-Hee; Cho, Eou Sik

    2013-11-01

    In this work, using a Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser, a direct patterning of indium tin oxide (ITO) channel was realized on glass substrates and the results were compared and analyzed in terms of the effect of repetition rate, scanning speed on etching characteristics. The results showed that the laser conditions of 40 kHz repetition rate with a scanning speed of 500 mm/s were appropriate for the channeling of ITO electrodes. The length of laser-patterned channel was maintained at about 55 microm. However, residual spikes (about 50 nm in height) of ITO were found to be formed at the edges of the laser ablated area and a few ITO residues remained on the glass substrate after laser scanning. By dipping the laser-ablated ITO film in ITO diluted etchant (ITO etchant/DI water: 1/10) at 50 degrees C for 3 min, the spikes and residual ITO were effectively removed. At last, using the laser direct patterning, a bottom-source-drain indium gallium zinc oxide thin film transistor (IGZO-TFT) was fabricated. It is successfully demonstrated that the laser direct patterning can be utilized instead of photolithography to simplify the fabrication process of TFT channel, resulting in the increase of productivity and reduction of cost. PMID:24245327

  4. Chemical vapor deposition of copper films

    NASA Astrophysics Data System (ADS)

    Borgharkar, Narendra Shamkant

    We have studied the kinetics of copper chemical vapor deposition (CVD) for interconnect metallization using hydrogen (Hsb2) reduction of the Cu(hfac)sb2 (copper(II) hexafluoroacetylacetonate) precursor. Steady-state deposition rates were measured using a hot-wall microbalance reactor. For base case conditions of 2 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C, a growth rate of 0.5 mg cmsp{-2} hrsp{-1} (ca. 10 nm minsp{-1}) is observed. Reaction order experiments suggest that the deposition rate passes through a maximum at partial pressure of 2 Torr of Cu(hfac)sb2. The deposition rate has an overall half-order dependence on Hsb2 partial pressure. A Langmuir-Hinshelwood rate expression is used to describe the observed kinetic dependencies on Cu(hfac)sb2, Hsb2, and H(hfac). Based on the rate expression a mechanism is proposed in which the overall rate is determined by the surface reaction of adsorbed Cu(hfac)sb2 and H species. Additionally, the role of alcohols in enhancing the deposition rate has been investigated. Addition of isopropanol results in a six fold enhancement to yield a deposition rate of 3.3 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}) at 5 Torr of isopropanol, 0.4 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C. Ethanol and methanol give lower enhancements of 1.75 and 1.1 mg cmsp{-2} hrsp{-1}, respectively. A mechanism based on the ordering of the aqueous pKsba values of the alcohols is proposed to explain the observed results. Lastly, we have built a warm-wall Pedestal reactor apparatus to demonstrate copper CVD on TiN/Si substrates. The apparatus includes a liquid injection system for transport of isopropanol-diluted precursor solutions. At optimized conditions of precursor and substrate pre-treatments, we have deposited uniform films of copper on TiN/Si substrates at an average deposition rate of 3.0 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}).

  5. Nanomechanical and nanotribological properties of Nb substituted TiN thin films

    SciTech Connect

    Krishna, M. Ghanashyam; Vasu, K.; Padmanabhan, K. A.

    2012-06-25

    Nanomechanical and nanotribological properties of Ti{sub 1-x}Nb{sub x}N (0{<=}x{<=}1) thin films were investigated as a function x. The films were deposited onto polycrystalline nuclear grade 316LN stainless steel (SS) substrate by radio frequency magnetron sputtering in 100% N{sub 2} plasma. The hardness and Young's modulus increased while the friction coefficient and wear volume decreased with increasing Nb substitution. The highest hardness achieved was 31GPa for x=0.77. At the same Nb concentration, the friction coefficient was 0.15 and the elastic recovery was 60%.

  6. Recrystallisation of electrophoretically deposited CdTe films

    NASA Astrophysics Data System (ADS)

    Pande, P. C.; Bocking, S.; Duke, S.; Miles, R. W.; Carter, M. J.; Latimer, I. D.; Hill, R.

    1996-02-01

    Films of CdTe have been produced by a novel low cost process based on electrophoretic deposition using polar organic solvents. The main advantage of this method is the high rate of deposition, greater than 20 μm/min. Details of the deposition process are given and the effects of post-deposition annealing of the samples have also been investigated using XRD, SEM and EDAX. Laser annealing resulted in melting of CdTe producing more compact and robust films.

  7. A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitors.

    PubMed

    Groenland, A W; Wolters, R A M; Kovalgin, A Y; Schmitz, J

    2011-09-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2-silicon substrate). A high quality 50-100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 degrees C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (I leak) and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

  8. Thickness Dependence of Properties of ITO Films Deposited on PET Substrates.

    PubMed

    Kim, Seon Tae; Kim, Tae Gyu; Cho, Hyun; Yoon, Su Jong; Kim, Hye Sung; Kim, Jin Kon

    2016-02-01

    Indium tin oxide (ITO) films with various thicknesses from 104 nm to 513 nm were prepared onto polyethylene terephthalate (PET) substrates by using r.f. magnetron sputtering without intentionally heating the substrates. The structural, optical, and electrical properties of ITO films were investigated as a function of film thickness. It was found that the amorphous nature of the ITO film was dominant below the thickness of about 200 nm but the degree of the crystallinity increased with an increasing thickness above the thickness of about 250 nm, resulting in the increase of carrier concentration and therefore reducing the electrical resistivity from 5.1 x 10(-3) to 9.4 x 10(-4) omega x cm. The average transmittance (400-800 nm) of the ITO deposited PET substrates decreased as the film thickness was increasing and was above 80% for the thickness below 315 nm. The results show that the improvement of the film crystallinity with the film thickness contributes to the increase of the carrier concentration and the enhancement of the electrical conductivity. PMID:27433686

  9. Photoelectrochemical performance of W-doped BiVO4 thin films deposited by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Holland, S. Keith; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

    2014-01-01

    The effects of tungsten doping and hydrogen annealing on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting were studied. Thin films of BiVO were deposited on indium tin oxide-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) to the precursor. The 1.7- to 2.2-μm-thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375°C in 3% H exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination, where photocurrent densities of up to 1.3 mA cm-2 at 0.5 V with respect to Ag/AgCl were achieved. Films doped with 1% or 5% (atomic percent) tungsten from either STA or AMT exhibited reduced PEC performance and greater sample-to-sample performance variations. Powder x-ray diffraction data indicated that the films continue to crystallize in the monoclinic polymorph at low doping levels but crystallize in the tetragonal scheelite structure at higher doping. It is surmised that the phase and morphology differences promoted by the addition of W during the deposition process reduced the PEC performance as measured by photovoltammetry.

  10. Evolution of local texture and grain morphology in metal plasma immersion ion implantation and deposition of TiN

    SciTech Connect

    Manova, D.; Attenberger, W.; Maendl, S.; Stritzker, B.; Rauschenbach, B.

    2004-11-01

    The local crystallographic texture and grain orientation was investigated for deposition of TiN by metal plasma immersion ion implantation and deposition (MePIIID) at different ion incident angles across one sample. A very good match between the tilt of (fiber) texture and the tilt of grains was observed, indicating the validity of models for ion beam assisted deposition (IBAD) also for MePIIID. A (100) orientation was obtained for 5 kV pulses at 9% duty cycle. The ion incident angle changed from near normal at the center towards 35 deg. tilt away from the surface normal at the sample edge for the substrate orientation at 45 deg. towards the cathode. However, due to the pulsed regime in MePIIID, there exist certain differences from IBAD.

  11. Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.

    PubMed

    Wölz, M; Hauswald, C; Flissikowski, T; Gotschke, T; Fernández-Garrido, S; Brandt, O; Grahn, H T; Geelhaar, L; Riechert, H

    2015-06-10

    Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry show that Ti is converted to TiN upon exposure of the surface to the N plasma. In addition, the ellipsometric data demonstrate this TiN film to be metallic. The diffraction data evidence that the GaN nanowires have a strict epitaxial relationship to this film. Photoluminescence spectroscopy of the GaN nanowires shows excitonic transitions virtually identical in spectral position, line width, and decay time to those of state-of-the-art GaN nanowires grown on Si. Therefore, the crystalline quality of the GaN nanowires grown on metallic TiN and on Si is equivalent. The freedom to employ metallic substrates for the epitaxial growth of semiconductor nanowires in high structural quality may enable novel applications that benefit from the associated high thermal and electrical conductivity as well as optical reflectivity.

  12. Electric-field-ratio profiling at the Silsilah tin-bearing greisen deposit, Kingdom of Saudi Arabia

    USGS Publications Warehouse

    Kamilli, R.J.; Zablocki, C.J.

    1993-01-01

    Buried, possibly mineralized granite cupolas at the Silsilah tin deposit in Saudi Arabia have been successfully located using a closely spaced electric-field-ratio profiling technique. In this study electrical fields at 27 and 270 Hz across grounded electrodes spaced 50m apart were measured along six traverses. The technique allowed the authors to identify and distinguish among unroofed granite cupolas, cupolas with their aplite-pegmatite apical contact zones intact, strong and weak greisens, dikes, faults, and pervasively argillized rocks. -from Authors

  13. Sputter deposited W1-x-yNixTiyO3 thin films: Electrochromic properties and durability

    NASA Astrophysics Data System (ADS)

    Morales-Luna, M.; Arvizu, M. A.; Granqvist, C. G.; Niklasson, G. A.

    2016-02-01

    Previous research demonstrated that a small amount of nickel enhances the coloration efficiency of tungsten-nickel oxide electrochromic (EC) thin films with respect to that of pure tungsten oxide (WO3) films. Furthermore the incorporation of titanium gives an improvement in the durability of tungsten-titanium oxide EC thin films. In this work we investigated the EC performance of tungsten-nickel-titanium oxide (W1-x-yNixTiyO3) EC thin films with emphasis on durability. The films were deposited on indium tin oxide covered glass by reactive dc sputtering from tungsten, tungsten-titanium alloy and nickel targets. Cyclic voltammetry was performed using 1 M LiClO4 in propylene carbonate as electrolyte. The voltage window was chosen to induce fast degradation of the samples within 80 cycles. Elemental compositions were obtained by Rutherford Backscattering Spectroscopy.

  14. Pulsed laser deposition of CdWO4 thin films

    NASA Astrophysics Data System (ADS)

    Kodu, M.; Avarmaa, T.; Jaaniso, R.; Leemets, K.; Mändar, H.; Nagirnyi, V.

    2016-10-01

    Thin CdWO4 films were produced on various substrates by pulsed laser deposition. A method of producing transparent films of high structural and optical quality on MgO substrate was developed. It is based on deposition of an amorphous film from a non-stoichiometric CdWO4-CdO target and a consequent crystallization of the film in oxygen atmosphere at 750 °C. The quality of the films produced was verified by x-ray diffraction, electron probe microanalysis, scanning electron microscopy, Raman and optical spectroscopy.

  15. Using of SnO{sub 2} deposition by spray pyrolysis method for thin film gas sensors (TFGS) manufacturing

    SciTech Connect

    Dmitriev, S.V.; Korotchenkov, G.S.; Brynzari, V.I.

    1996-12-31

    This report presents results of investigations aimed to TFGS technology elaboration. As follows from the results of electronic model of TFGS and technological possibilities optimal parameters of gas sensitive films are: the concentration of charge carriers in the film - 10<17> - 10<19> cm<-3> and film thickness d - 30-100 rim. At that for getting high reproducibility of TFGS parameters these parameters of the films must have high degree of surface uniformity. Other aspects of the problem of gas sensitive films deposition are bounded with the fact that gas sensitive films have to deposit on the already formed by collective methods {open_quotes}chip{close_quotes} of TFGS, and that gas sensors have high temperature active zones. So, for minimization of degradation effects in {open_quotes}chip{close_quotes}, the chosen method must provide: high deposition rate, low deposition temperature, high gas sensitivity, and high demanded stoichiometry of tin oxide films. The gas detection performance of these sensors was evaluated for methane, hydrogen, carbon monoxide, and propane.

  16. Precursors for the polymer-assisted deposition of films

    DOEpatents

    McCleskey, Thomas M.; Burrell, Anthony K.; Jia, Quanxi; Lin, Yuan

    2013-09-10

    A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  17. Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

    SciTech Connect

    Burke, Micheal Blake, Alan; Povey, Ian M.; Schmidt, Michael; Petkov, Nikolay; Carolan, Patrick; Quinn, Aidan J.

    2014-05-15

    A design of experiments methodology was used to optimize the sheet resistance of titanium nitride (TiN) films produced by plasma-enhanced atomic layer deposition (PE-ALD) using a tetrakis(dimethylamino)titanium precursor in a N{sub 2}/H{sub 2} plasma at low temperature (250 °C). At fixed chamber pressure (300 mTorr) and plasma power (300 W), the plasma duration and N{sub 2} flow rate were the most significant factors. The lowest sheet resistance values (163 Ω/sq. for a 20 nm TiN film) were obtained using plasma durations ∼40 s, N{sub 2} flow rates >60 standard cubic centimeters per minute, and purge times ∼60 s. Time of flight secondary ion mass spectroscopy data revealed reduced levels of carbon contaminants in the TiN films with lowest sheet resistance (163 Ω/sq.), compared to films with higher sheet resistance (400–600 Ω/sq.) while transmission electron microscopy data showed a higher density of nanocrystallites in the low-resistance films. Further significant reductions in sheet resistance, from 163 Ω/sq. to 70 Ω/sq. for a 20 nm TiN film (corresponding resistivity ∼145 μΩ·cm), were achieved by addition of a postcycle Ar/N{sub 2} plasma step in the PE-ALD process.

  18. New deposition processes for the growth of oxide and nitride thin films

    SciTech Connect

    Apen, E.A.; Atagi, L.M.; Barbero, R.S.; Espinoza, B.F.; Hubbard, K.M.; Salazar, K.V.; Samuels, J.A.; Smith, D.C.; Hoffman, D.M.

    1998-11-01

    This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The goal of this effort is to study the use of homoleptic metal amido compounds as precursors for chemical vapor deposition (CVD). The amides offer potential for the deposition of a variety of important materials at low temperatures. The establishment of these precursor compounds will enhance the ability to exploit the properties of advanced materials in numerous coatings applications. Experiments were performed to study the reactivity of Sn[NMe{sub 2}]{sub 4} with oxygen. The data demonstrated that gas-phase insertion of oxygen into the Sn-N bond, leading to a reactive intermediate, plays an important role in tin oxide deposition. Several CVD processes for technologically important materials were developed using the amido precursor complexes. These included the plasma enhanced CVD of TiN and Zr{sub 3}N{sub 4}, and the thermal CVD of GaN and Al N. Quality films were obtained in each case, demonstrating the potential of the amido compounds as CVD precursors.

  19. Perovskite solar cells based on nanocolumnar plasma-deposited ZnO thin films.

    PubMed

    Ramos, F Javier; López-Santos, Maria C; Guillén, Elena; Nazeeruddin, Mohammad Khaja; Grätzel, Michael; Gonzalez-Elipe, Agustin R; Ahmad, Shahzada

    2014-04-14

    ZnO thin films having a nanocolumnar microstructure are grown by plasma-enhanced chemical vapor deposition at 423 K on pre-treated fluorine-doped tin oxide (FTO) substrates. The films consist of c-axis-oriented wurtzite ZnO nanocolumns with well-defined microstructure and crystallinity. By sensitizing CH3NH3PbI3 on these photoanodes a power conversion of 4.8% is obtained for solid-state solar cells. Poly(triarylamine) is found to be less effective when used as the hole-transport material, compared to 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD), while the higher annealing temperature of the perovskite leads to a better infiltration in the nanocolumnar structure and an enhancement of the cell efficiency. PMID:24643984

  20. Diorganotin(IV) 2-pyridyl selenolates: synthesis, structures and their utility as molecular precursors for the preparation of tin selenide nanocrystals and thin films.

    PubMed

    Sharma, Rakesh K; Kedarnath, G; Wadawale, Amey; Betty, C A; Vishwanadh, B; Jain, Vimal K

    2012-10-21

    Reactions of R(2)SnCl(2) (R = Me, Et, (t)Bu) with NaSeC(5)H(3)(R'-3)N (R' = H or Me) gave complexes of the composition [R(2)Sn{2-SeC(5)H(3)(R'-3)N)}(2)], which on treatment with R(2)SnCl(2) afforded chloro complexes, [R(2)Sn{2-SeC(5)H(3)(R'-3)N}Cl]. These complexes were characterized by elemental analyses and UV-vis and NMR ((1)H, (13)C, (77)Se and (119)Sn) spectroscopy. The crystal structures of [R(2)Sn(SeC(5)H(4)N)(2)] (R = Me or (t)Bu) and [Me(2)Sn{2-SeC(5)H(3)(Me-3)N}Cl] were determined by single crystal X-ray diffraction. The tin atom in the former two structures acquires a skew trapezoidal configuration, whereas in the latter it adopts a distorted trigonal bipyramidal geometry. Thermolysis of [R(2)Sn(2-SeC(5)H(4)N)(2)] (R = Me, Et or (t)Bu) and [Et(2)Sn{2-SeC(5)H(3)(Me-3)N}(2)] in oleylamine (OA) afforded tin selenide nanostructures. Thin films of SnSe were deposited on glass and silicon substrates by the AACVD of [(t)Bu(2)Sn(2-SeC(5)H(4)N)(2)]. The nanostructures and thin films were characterized by XRD, EDX, AFM, SEM, TEM and SAED techniques. The photovoltaic properties of the thin films have been evaluated. PMID:22918450

  1. Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate.

    PubMed

    Wu, Chia-Ching; Yang, Cheng-Fu

    2013-06-12

    P-type lithium-doped nickel oxide (p-LNiO) thin films were deposited on an n-type indium tin oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a transparent p-n heterojunction diode. The structural, optical, and electrical properties of the p-LNiO and ITO thin films and the p-LNiO/n-ITO heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and current-voltage (I-V) measurements. The nonlinear and rectifying I-V properties confirmed that a heterojunction diode characteristic was successfully formed in the p-LNiO/n-ITO (p-n) structure. The I-V characteristic was dominated by space-charge-limited current (SCLC), and the Anderson model demonstrated that band alignment existed in the p-LNiO/n-ITO heterojunction diode. PMID:23683053

  2. Electrochromic lithium nickel oxide thin film by pulsed laser deposition

    SciTech Connect

    Wen, S.J.; Rottkay, K. von; Rubin, M.

    1996-10-01

    * Thin films of lithium nickel oxide were deposited by pulsed laser deposition (PLD) from targets of pressed LiNiO{sub 2} powder with layered structure. The composition, structure and surface air sensitivity of these films were analyzed using a variety of techniques, such as nuclear reaction analysis, Rutherford backscattering spectrometry (RBS), x-ray diffraction, infrared spectroscopy, and atomic force microscopy. Optical properties were measured using a combination of variable angle spectroscopic ellipsometry and IP spectroradiometry. Crystalline structure, surface morphology and chemical composition of Li{sub x}Ni{sub 1-x}O thin films depend strongly on deposition oxygen pressure, temperature as well as substrate target distance. The films produced at temperatures lower than 600 degrees C spontaneously absorb CO{sub 2} and H{sub 2}O at their surface once they are exposed to the air. The films deposited at 600 degrees C proved to be stable in air over a long period. Even when deposited at room temperature the PLD films are denser and more stable than sputtered films. RBS determined that the best electrochromic films had the stoichiometric composition L{sub 0.5}Ni{sub 0.5}O when deposited at 60 mTorr O{sub 2} pressure. Electrochemical tests show that the films exhibit excellent reversibility in the range 1.0 V to 3.4 V versus lithium and long cyclic life stability in a liquid electrolyte half cell. Electrochemical formatting which is used to develop electrochromism in other films and nickel oxide films is not needed for these stoichiometric films. The optical transmission range is almost 70% at 550 nm for 120 nm thick films.

  3. Effect of crystallographic orientation on hillock formation in thermally cycled large grain tin films

    NASA Astrophysics Data System (ADS)

    Koppes, John Patrick

    Tin whiskers and hillocks grow spontaneously from the surfaces of polycrystalline Sn films at room temperature. Whiskers can grow long enough to cause short circuits in electronic devices. We hypothesized that the anisotropies of the crystal structure lead to locally high strain energies that are relieved by the growth of whiskers and hillocks. This research studies hillock formations on large grain Sn-alloy films relative to the crystallographic orientations of the adjacent grains. Large grain films were produced by solidifying 96.5wt% Sn - 3wt% Ag - 0.5wt% Cu solder alloy on a Cu substrate. These surface defects (hillocks) grew predominately at grain boundaries during thermal cycling. The formation of the surface defects between two grains created a pseudo-bi-crystal sample geometry, making it ideal for studying surface defects relative to the local crystallographic orientations and the grains' corresponding anisotropic properties. The crystallographic orientations of the grains were studied with Electron Backscatter Diffraction (EBSD) and Laue micro-diffraction at the Lawrence Berkeley National Laboratory Advanced Light Source. Local orientation studies of the surface defects and the surrounding grains indicated that the surface defects nucleated and grew with low dislocation densities. In addition, the linear surface defect densities along the grain boundaries were measured and observed to change as a function of orientation. The change in linear defect density with respect to orientation was due, in part, to the anisotropy of the coefficient of thermal expansion of β-Sn. In addition, it was important to account for elastic anisotropies. The elastic stresses, strains, and strain energy densities of the microstructures were determined with Object Oriented Finite element analysis. The simulations indicated that during thermal cycling the local stresses exceeded the yield strength. As a result, the highest linear defect densities did not occur at orientations

  4. Properties of vaccum arc deposited amorphous hard carbon films

    SciTech Connect

    Anders, S.; Anders, A.; Raoux, S.

    1995-12-31

    Amorphous hard carbon films formed by vacuum arc deposition are, hydrogen-free, dense, and very hard. The properties of amorphous hard carbon films depend strongly on the energy of the incident ions. A technique which is called Plasma Immersion Ion Implantation can be applied to vacuum arc deposition of amorphous hard carbon films to influence the ion energy. We have studied the influence of the ion energy on the elastic modulus determined by an ultrasonic method, and have measured the optical gap for films with the highest sp{sup 3} content we have obtained so far with this deposition technique. The results show an elastic modulus close to that of diamond, and an optical gap of 2.1 eV which is much greater than for amorphous hard carbon films deposited by other techniques.

  5. Polyimide films from vapor deposition: toward high strength, NIF capsules

    SciTech Connect

    Cook, R C; Hsieh, E J; Letts, S A; Roberts, C C; Saculla, M

    1998-10-16

    The focus of recent efforts at LLNL has been to demonstrate that vapor deposition processing is a suitable technique to form polyimide fnms with sufficient strength for current national ignition facility target specifications. Production of polyimide films with controlled stoichiometry was acccomplished by: 1) depositing a novel co-functional monomer and 2) matching the vapor pressure of each monomer in PMDA/ODA co-depositions. The sublimation and deposition rate for the monomers was determined over a range of temperatures. Polyimide films with thicknesses up to 30 p.m were fabricated. Composition, structure and strength were assessed using FTIR, SEM and biaxial burst testing. The best films had a tensile strength of approximately 100 MPa. A qualitative relationship between the stoichiometry and tensile strength of the film was demonstrated. Thin films ({approximately}3.5 {micro}m) were typically smooth with an rms of 1.5 nm.

  6. Properties of vacuum arc deposited amorphous hard carbon films

    SciTech Connect

    Anders, S.; Anders, A.; Raoux, S.

    1995-04-01

    Amorphous hard carbon films formed by vacuum arc deposition are hydrogen-free, dense, and very hard. The properties of amorphous hard carbon films depend strongly on the energy of the incident ions. A technique which is called Plasma Immersion Ion Implantation can be applied to vacuum arc deposition of amorphous hard carbon films to influence the ion energy. The authors have studied the influence of the ion energy on the elastic modulus determined by an ultrasonic method, and have measured the optical gap for films with the highest sp{sup 3} content they have obtained so far with this deposition technique. The results show an elastic modulus close to that of diamond, and an optical gap of 2.1 eV which is much greater than for amorphous hard carbon films deposited by other techniques.

  7. Composition dependence of the photochemical reduction of Ag{sup +} by as-grown Pb(Zr{sub x}Ti{sub 1−x})O{sub 3} films on indium tin oxide electrode

    SciTech Connect

    Zhang, Man; Jiang, Chunxiang; Dong, Wen; Zheng, Fengang; Fang, Liang; Su, Xiaodong; Shen, Mingrong

    2013-09-02

    Photochemical growth of metal particles on ferroelectric films has usually been found to depend on polarization effect solely. This research exploits the interplay of the film/electrode interface barrier and depolarization field on the photoreduction of Ag{sup +} to Ag onto Pb(Zr,Ti)O{sub 3} (PZT) films deposited on indium tin oxide (ITO) electrodes. Ag nanoparticles are observed on the as-grown polycrystalline PZT films without poling, while the particle size and density are closely related to the concentration of Zr in PZT and the poling direction. The enhancement on the photoelectrochemical properties of the ITO/PZT photocathode by the decoration of Ag nanoparticles is finally demonstrated.

  8. Optical and electrochemical properties of Cu-doped NiO films prepared by electrochemical deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Lili; Su, Ge; Liu, Wei; Cao, Lixin; Wang, Jing; Dong, Zheng; Song, Meiqin

    2011-02-01

    Cu-doped nickel oxide (NiO) thin films were prepared by electrochemial deposition (cathodic deposition) technique onto the fluorine doped tin oxide (F: SnO2; FTO) coated glass substrates from organic solutions. Effects of Cu content on the morphology, structure, optical and electrochromic properties of NiO films were investigated by means of scanning electron microscope (SEM), X-ray diffraction (XRD), ultraviolet-visible spectrophotometer (UV-vis) and cyclic voltammetry (CV), respectively. SEM images indicated the formation of nanorods after Cu was added. The films were formed with amorphous or short-range ordered NiO grains and a trace of face-centered cubic NixCu1-xO confirmed by XRD. The transmittances of both bleached state and colored state were significantly lowered when Cu was added. The NiO films doped with Cu (the molar ratio was 1/8) exhibited the optimum electrochromic behavior with a variation of transmittance (ΔT) up to ∼80% at the wavelength range of 350-600 nm. Cu doping reduces the response time for both the coloring and bleaching states, and the reversibility of the redox reaction was increased as well.

  9. Influence of indium tin oxide electrodes deposited at room temperature on the properties of organic light-emitting devices

    SciTech Connect

    Satoh, Toshikazu; Fujikawa, Hisayoshi; Taga, Yasunori

    2005-10-03

    The influence of indium tin oxide (ITO) electrodes deposited at room temperature (ITO-RT) on the properties of organic light-emitting devices (OLEDs) has been studied. The OLED on the ITO-RT showed an obvious shorter lifetime and higher operating voltage than that on the conventional ITO electrode deposited at 573 K. The result of an in situ x-ray photoelectron spectroscopy analysis of the ITO electrode and the organic layer suggested that many of the hydroxyl groups that originate in the amorphous structure of the ITO-RT electrode oxidize the organic layer. The performance of the OLED on the ITO-RT is able to be explained by the oxidation of the organic layer.

  10. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    NASA Astrophysics Data System (ADS)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  11. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    NASA Astrophysics Data System (ADS)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  12. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-06-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

  13. Chemical deposition and characterization of copper indium disulphide thin films

    NASA Astrophysics Data System (ADS)

    Pathan, H. M.; Lokhande, C. D.

    2004-12-01

    A simple chemical deposition method was used to prepare copper indium disulphide thin films. The method is based on sequential immersion of substrate into different cationic and anionic precursor solutions and rinsing before every immersion with double distilled water. In the present investigation, CuInS 2 films have been deposited using chemical deposition method. These films were characterized for their structural, surface morphological, compositional and electrical properties by using X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Rutherford back scattering (RBS), electrical resistivity and thermoemf measurement techniques.

  14. Optical Films Deposited By A Reactive Ion Plating Process

    NASA Astrophysics Data System (ADS)

    Pulker, H. K.; BUhler, M.; Hora, R.

    1986-12-01

    Oxide films on glass substrates, both single and multilayers, were produced by a special reactive ion plating process in the new automatic plating system BALZERS BAP 800. Structure, optical and mechanical film properties have been examined as a function of the deposition parameters. Multilayer systems consisting of TiO2 and Si02 films were deposited, and tests were made concerning optical characteristics, reproducibility and stability. Because of the unique characteristics of the films ion plating promises to become the new technology for the production of optical coatings.

  15. Tin-polymetallic sulfide deposits in the eastern part of the Dachang tin field (South China) and the role of black shales in their origin

    NASA Astrophysics Data System (ADS)

    Pašava, Jan; Kříbek, Bohdan; Dobeš, Petr; Vavřín, Ivan; Žák, Karel; Delian, Fan; Tao, Zhang; Boiron, Marie-Christine

    2003-01-01

    The Dafulou and Huile vein and stratabound cassiterite-sulfide deposits and sheeted ore veins at the Kangma cassiterite-sulfide deposit are located in the eastern part of the Dachang tin field. These deposits are hosted in a sedimentary sequence containing significant concentrations of organic matter in the form of Lower Devonian calcareous black shales and hornfels. These rocks together with the younger intrusion of Longxianggai granite (91±2 Ma) actively participated in the formation of Sn-polymetallic deposits. The following three major stages have been distinguished in stratiform and vein-type orebodies at Dafulou, Huile and Kangma: stage I (cassiterite, pyrrhotite, arsenopyrite, tourmaline, carbonate), stage II - main sulfide stage (quartz, cassiterite, arsenopyrite, pyrrhotite, sphalerite, stannite, pyrite, carbonates) and stage III (native Bi, galena, electrum, sulfosalts). Stage IV (post-ore), recognized at Huile is represented by barren carbonates and zeolites. Whole rock geochemistry has revealed that at Dafulou, Bi and Cu correlate strongly with S, whereas V and Pb correlate well with Corg (organic carbon). The similar distribution patterns of selected elements in average slightly mineralized low-Ca black shales indicate a fluid composition similar for all deposits studied. Studies of graphitization of the organic matter in black shales adjacent to orebodies indicate that d(002) and FWHM (full width in half maximum)/peak height values gradually decrease in the following sequence: Dafulou deposit → Kangma deposit → Huile deposit. The pyrolysate of wall rocks at the Dafulou deposit is relatively enriched in asphaltenes and maltenes (55.6-72.0% of the pyrolysate) comparable with pyrolysate obtained from more distal black shales (19.2-28.5%). Typical GC-MS spectra of pyrolysate from distal black shales are dominated by alkanes in the n-C15 to n-C25 range, aromatic molecules being represented mostly by alkyl-naphthalenes. In contrast, only traces of

  16. Electrochemical fabrication and optical properties of porous tin oxide films with structural colors

    SciTech Connect

    Cheng, Hua; Shu, Shiwei; Lee, Chris; Zeng, Shanshan; Lu, Zhouguang; Lu, Jian E-mail: yangli@cityu.edu.hk; Li, Yang Yang E-mail: yangli@cityu.edu.hk

    2014-10-21

    Photonic crystals with porous features not only provide the capability to control light but also enable structural colors that are environmentally sensitive. Here, we report a novel kind of tin oxide-based photonic crystal featuring periodically arranged air pores fabricated by the periodic anodization of tin foil. The existence of a photonic band gap in the fabricated structure is verified by its vivid color, and its reflective spectra which are responsive to environmental stimuli. Furthermore, the sample colors (i.e., the photonic band gap positions) can be easily adjusted by manipulating the anodization parameters. The theoretical modeling results of these tin oxide photonic crystals agree well with the reported experimental ones.

  17. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    NASA Astrophysics Data System (ADS)

    Härkönen, J.; Ott, J.; Mäkelä, M.; Arsenovich, T.; Gädda, A.; Peltola, T.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Junkes, A.; Niinistö, J.; Ritala, M.

    2016-09-01

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few μm of physical size required in ultra-fine pitch pixel detectors.

  18. Molecular beam deposition of high quality silicon oxide dielectric films

    NASA Astrophysics Data System (ADS)

    Chand, Naresh; Johnson, J. E.; Osenbach, J. W.; Liang, W. C.; Feldman, L. C.; Tsang, W. T.; Krautter, H. W.; Passlack, M.; Hull, R.; Swaminathan, V.

    1995-03-01

    We report a method for depositing clean, uniform and stable SiO x dielectric films with high control and reproducibility. The technique uses a molecular or chemical beam epitaxy system (MBE or CBE). The technique offers many advantages over the conventional methods such as load lock facility, accurate determination of the flux, low background contamination, in-situ process monitoring tools, and heating, rotation and tilting of the substrate. Rutherford backscattering (RBS) shows that the films deposited without oxygen are stoichiometric, 50% oxygen and 50% Si, irrespective of the deposition rate or temperature. Such SiO films have a resistivity of ≥10 13 Ω · cm and a nominal refractive index of 2 at 632.8 nm. The refractive index can be reduced by introducing a controlled amount of oxygen into the chamber to result in SiO x ( x = 1-2) films. The SiO films have uniform density and composition, and are free from voids, or any inclusions of different crystalline or amorphous phases. These SiO films are easy to pattern and their erosion rate is slower than that of SiO 2 deposited by plasma enhanced chemical vapor deposition (PECVD). During 192 h soak in 99°C deionized (DI) water, no moisture absorption was observed in SiO films deposited at a rate of 2 Å/s. Even in films deposited at 11 Å/s, the moisture content after 192 h soak in 99°C DI water was about one third the moisture content of an as-deposited typical PECVD SiO 2 film, indicating that the SiO films are highly resistant to moisture absorption and the film quality improves with reducing deposition rate. The insulating, mechanical and optical properties of SiO x films make them suitable for many applications such as surface passivation, mask for processing and facet coating of lasers. The process can be easily integrated with MBE/CBE which would greatly simplify and improve the III-V semiconductor processing. It may also be possible to deposit such dielectric films by CBE using gaseous compound sources.

  19. Helical structured thin films deposited at a glancing angle

    NASA Astrophysics Data System (ADS)

    Jen, Yi-Jun; Jheng, Ci-Yao; Chan, San; Tseng, Chien-Hoa

    2015-08-01

    Gold nanohelical structured thin films (NHFs) were tried to be deposited on a glass substrate using glancing angle deposition technique. At a deposition angle of 89°, gold NHFs were fabricated by introducing liquid nitrogen to flow under the backside of BK7 glass substrate holder. The temperature of substrate was reduced to be less than -140°C before deposition. The spin rate was controlled with respect to the deposition rate to grow three different sized nanohelices. The morphology and optical properties of Au NHFs were measured and compared between the three samples. The strong g-factor implies high sensitivity of deposited helixes in biosensing in the future.

  20. Microstructural evolution and Poisson ratio of epitaxial ScN grown on TiN(001)/MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition

    SciTech Connect

    Gall, D.; Petrov, I.; Desjardins, P.; Greene, J.E.

    1999-11-01

    ScN layers, 60{endash}80 nm thick, were grown at 800&hthinsp;{degree}C on 220-nm-thick epitaxial TiN(001) buffer layers on MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition in pure N{sub 2} discharges. The films are stoichiometric with N/Sc ratios, determined by Rutherford backscattering spectroscopy and x-ray photoelectron spectroscopy, of 1.00{plus_minus}0.02. Plan-view and cross-sectional transmission electron microscopy analyses showed that the films are single crystals which appear defect free up to a critical thickness of {approx_equal}15 nm, above which an array of nanopipes form with their tubular axis along the film growth direction and extending to the free surface. The nanopipes are rectangular in cross section with areas of {approx_equal}1.5{times}5&hthinsp;nm{sup 2} and are self-organized along {l_angle}100{r_angle}, directions with an average separation of {approx_equal}40 nm. Their formation is the result of periodic kinetic surface roughening which leads to atomic self-shadowing and, under limited adatom mobility conditions, to deep cusps which are the origin of the nanopipes. The ScN layers are nearly relaxed, as determined from x-ray diffraction {theta}-2{theta} scans in both reflection and transmission, with only a small residual compressive strain due to differential thermal contraction. The Poisson ratio of ScN was found to be 0.20{plus_minus}0.04, in good agreement with {ital ab initio} calculations. {copyright} {ital 1999 American Institute of Physics.}

  1. Surface treatment of nanocrystal quantum dots after film deposition

    DOEpatents

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  2. Influence of plasma density on the chemical composition and structural properties of pulsed laser deposited TiAlN thin films

    SciTech Connect

    Quiñones-Galván, J. G.; Camps, Enrique; Muhl, S.; Flores, M.; Campos-González, E.

    2014-05-15

    Incorporation of substitutional Al into the TiN lattice of the ternary alloy TiAlN results in a material with improved properties compared to TiN. In this work, TiAlN thin films were grown by the simultaneous ablation of Ti and Al targets in a nitrogen containing reactive atmosphere. The deposit was formed on silicon substrates at low deposition temperature (200 °C). The dependence of the Al content of the films was studied as a function of the ion density of the plasma produced by the laser ablation of the Al target. The plasma parameters were measured by means of a planar Langmuir probe and optical emission spectroscopy. The chemical composition of the films was measured by energy dispersive X-ray spectroscopy. The results showed a strong dependence of the amount of aluminum incorporated in the films with the plasma density. The structural characterization of the deposits was carried out by Raman spectroscopy, X-ray diffraction, and transmission electron microscopy, where the substitutional incorporation of the Al into the TiN was demonstrated.

  3. Atomic layer deposition of MoS2 thin films

    NASA Astrophysics Data System (ADS)

    Browning, Robert; Padigi, Prasanna; Solanki, Raj; Tweet, Douglas J.; Schuele, Paul; Evans, David

    2015-03-01

    Atomic layer deposition (ALD) was used to grow thin films of MoS2 over 5 × 5 cm areas of silicon oxide coated silicon wafers. Smooth, uniform, and continuous films were produced over a temperature range of 350 °C-450 °C. The as-grown films were analyzed using x-ray photoelectron spectroscopy, Raman spectroscopy, photoluminescence, and x-ray diffraction. Electrical characteristics of the films were evaluated by fabricating a back gated field effect transistor. These analyses indicate that ALD technique can produce large area, high quality MoS2 films.

  4. Pulsed Laser Deposition of High Temperature Protonic Films

    NASA Technical Reports Server (NTRS)

    Dynys, Fred W.; Berger, M. H.; Sayir, Ali

    2006-01-01

    Pulsed laser deposition has been used to fabricate nanostructured BaCe(0.85)Y(0.15)O3- sigma) films. Protonic conduction of fabricated BaCe(0.85)Y(0.15)O(3-sigma) films was compared to sintered BaCe(0.85)Y(0.15)O(3-sigma). Sintered samples and laser targets were prepared by sintering BaCe(0.85)Y(0.15)O(3-sigma) powders derived by solid state synthesis. Films 1 to 8 micron thick were deposited by KrF excimer laser on porous Al2O3 substrates. Thin films were fabricated at deposition temperatures of 700 to 950 C at O2 pressures up to 200 mTorr using laser pulse energies of 0.45 - 0.95 J. Fabricated films were characterized by X-ray diffraction, electron microscopy and electrical impedance spectroscopy. Single phase BaCe(0.85)Y(0.15)O(3-sigma) films with a columnar growth morphology are observed with preferred crystal growth along the [100] or [001] direction. Results indicate [100] growth dependence upon laser pulse energy. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C to 900 C. Electrical conduction behavior was dependent upon film deposition temperature. Maximum conductivity occurs at deposition temperature of 900 oC; the electrical conductivity exceeds the sintered specimen. All other deposited films exhibit a lower electrical conductivity than the sintered specimen. Activation energy for electrical conduction showed dependence upon deposition temperature, it varied

  5. Deposition of diamond-like films by ECR microwave plasma

    NASA Technical Reports Server (NTRS)

    Shing, Yuh-Han (Inventor); Pool, Frederick S. (Inventor)

    1995-01-01

    Hard amorphous hydrogenated carbon, diamond-like films are deposited using an electron cyclotron resonance microwave plasma with a separate radio frequency power bias applied to a substrate stage. The electron cyclotron resonance microwave plasma yields low deposition pressure and creates ion species otherwise unavailable. A magnetic mirror configuration extracts special ion species from a plasma chamber. Different levels of the radio frequency power bias accelerate the ion species of the ECR plasma impinging on a substrate to form different diamond-like films. During the deposition process, a sample stage is maintained at an ambient temperature of less than 100.degree. C. No external heating is applied to the sample stage. The deposition process enables diamond-like films to be deposited on heat-sensitive substrates.

  6. Characterization of Nanoporous WO3 Films Grown via Ballistic Deposition

    SciTech Connect

    Smid, Bretislav; Li, Zhenjun; Dohnalkova, Alice; Arey, Bruce W.; Smith, R. Scott; Matolin, Vladimir; Kay, Bruce D.; Dohnalek, Zdenek

    2012-05-17

    We report on the preparation and characterization of high surface area, supported nanoporous tungsten oxide films prepared under different conditions on polished polycrystalline Ta and Pt(111) substrates via direct sublimation of monodispersed gas phase of cyclic (WO3)3 clusters. Scanning Electron Microscopy and Transmission Electron Microscopy were used to investigate the film morphology on a nanometer scale. The films consist of arrays of separated filaments that are amorphous. The chemical composition and the thermal stability of the films were investigated by means of X-ray Photoelectron Spectroscopy. The surface area and the distribution of binding sites on the films are measured as functions of growth temperature, deposition angle, and annealing conditions using temperature programmed desorption of Kr. Films deposited at 20 K and at an incident angle of 65{sup o} from substrate normal display the greatest specific surface area of {approx}560 m2/g.

  7. Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide

    NASA Technical Reports Server (NTRS)

    Gessert, T. A.; Li, X.; Wanlass, M. W.; Nelson, A. J.; Coutts, T. J.

    1990-01-01

    While dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.

  8. Evolution of optical properties of tin film from solid to liquid studied by spectroscopic ellipsometry and ab initio calculation

    SciTech Connect

    Zhang, D X; Shen, B; Zheng, Y X; Wang, S Y; Zhang, J B; Yang, S D; Zhang, R J; Chen, L Y; Wang, C Z; Ho, K M

    2014-03-24

    The temperature dependent optical properties of tin film from solid to liquid were studied by spectroscopic ellipsometry and ab initio molecular dynamics simulations. The dielectric function of liquid Sn was different from solid, and an interband transition near 1.5 eV was easily observed in solid while it apparently disappeared upon melting. From the evolution of optical properties with temperature, an optical measurement to acquire the melting point by ellipsometry was presented. From first principles calculation, we show that the local structure difference in solid and liquid is responsible for this difference in the optical properties observed in experiment.

  9. The influence of the SiO{sub 2} interlayer on transfer characteristic in tin oxide thin film transistor

    SciTech Connect

    Kim, Woong-Sun; Moon, Yeon-Keon; Kim, Kyung-Taek; Park, Jong-Wan

    2011-12-23

    In this article, we report the fabrication on SnO{sub 2} thin film transistors (TFTs) fabricated by DC sputtering system. SnO{sub 2} based TFTs have been reported previously, and all the TFTs operate depletion-mode, requiring the application of a gate voltage to turn it off. In contrast to previously reports, the SnO{sub 2} TFT reported herein operates as an enhancement-mode device, requiring the application of a gate voltage to turn the device on. Furthermore, we introduce an hafnium-tin oxide (HfSnO) semiconductor materials that have been developed for use as p-channel TFTs.

  10. Polymer-assisted aqueous deposition of metal oxide films

    DOEpatents

    Li, DeQuan; Jia, Quanxi

    2003-07-08

    An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

  11. Simultaneous Optimization of Nanocrystalline SnO2 Thin Film Deposition Using Multiple Linear Regressions

    PubMed Central

    Ebrahimiasl, Saeideh; Zakaria, Azmi

    2014-01-01

    A nanocrystalline SnO2 thin film was synthesized by a chemical bath method. The parameters affecting the energy band gap and surface morphology of the deposited SnO2 thin film were optimized using a semi-empirical method. Four parameters, including deposition time, pH, bath temperature and tin chloride (SnCl2·2H2O) concentration were optimized by a factorial method. The factorial used a Taguchi OA (TOA) design method to estimate certain interactions and obtain the actual responses. Statistical evidences in analysis of variance including high F-value (4,112.2 and 20.27), very low P-value (<0.012 and 0.0478), non-significant lack of fit, the determination coefficient (R2 equal to 0.978 and 0.977) and the adequate precision (170.96 and 12.57) validated the suggested model. The optima of the suggested model were verified in the laboratory and results were quite close to the predicted values, indicating that the model successfully simulated the optimum conditions of SnO2 thin film synthesis. PMID:24509767

  12. On the influence of DC electric fields on the aerosol assisted chemical vapor deposition growth of photoactive titanium dioxide thin films.

    PubMed

    Romero, Luz; Binions, Russell

    2013-11-01

    Titanium dioxide thin films were deposited on fluorine doped tin oxide glass substrate from the electric field assisted aerosol chemical vapor deposition (EACVD) reaction of titanium isopropoxide (TTIP, Ti(OC3H7)4) in toluene on glass substrates at a temperature of 450 °C. DC electric fields were generated by applying a potential difference between the electrodes of the transparent coated oxide coated glass substrates during the deposition. The deposited films were characterized using scanning electron microscopy, X-ray diffraction, atomic force microscopy, Raman spectroscopy, and UV-vis spectroscopy. The photoactivity and hydrophilicity of the deposited films were also analyzed using a dye-ink test and water-contact angle measurements. The characterization work revealed that the incorporation of DC electric fields produced significant reproducible changes in the film microstructure, preferred crystallographic orientation, roughness, and film thickness. Photocatalytic activity was calculated from the half-time (t1/2) or time taken to degrade 50% of the initial resazurin dye concentration. A large improvement in photocatalytic activity was observed for films deposited using an electric field with a strong orientation in the (004) direction (t1/2 17 min) as compared to a film deposited with no electric field (t1/2 40 min). PMID:24160408

  13. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    PubMed Central

    Daud, Mohd Norizam Md; Zakaria, Azmi; Jafari, Atefeh; Ghazali, Mohd Sabri Mohd; Abdullah, Wan Rafizah Wan; Zainal, Zulkarnain

    2012-01-01

    CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111) orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established. PMID:22754325

  14. Electron Microscopy Study of Tin Whisker Growth

    SciTech Connect

    Norton, Murray G.; Lebret, Joel

    2003-03-30

    The growth of tin whiskers formed on sputtered tin layers deposited on brass was studied using electron microscopy. The occurrence of whiskers appeared to be largely independent of the macroscopic stress state in the film; rather it was microscopic compressive stresses arising from the formation of an intermetallic phase that appeared to be the necessary precursor. Whisker morphology was a result of whether nucleation had occurred on single grains or on multiple grains. In the latter case, the whiskers had a fluted or striated surface. The formation of whiskers on electron transparent samples was demonstrated. These samples showed the whiskers were monocrystalline and defect free, and that the growth direction could be determined.

  15. Nanocrystalline tin oxide nanofibers deposited by a novel focused electrospinning method. Application to the detection of TATP precursors.

    PubMed

    Santos, José Pedro; Fernández, Maria Jesús; Fontecha, José Luis; Matatagui, Daniel; Sayago, Isabel; Horrillo, Maria Carmen; Gracia, Isabel

    2014-01-01

    A new method of depositing tin dioxide nanofibers in order to develop chemical sensors is presented. It involves an electrospinning process with in-plane electrostatic focusing over micromechanized substrates. It is a fast and reproducible method. After an annealing process, which can be performed by the substrate heaters, it is observed that the fibers are intertwined forming porous networks that are randomly distributed on the substrate. The fiber diameters oscillate from 100 nm to 200 nm and fiber lengths reach several tens of microns. Each fiber has a polycrystalline structure with multiple nano-grains. The sensors have been tested for the detection of acetone and hydrogen peroxide (precursors of the explosive triacetone triperoxide, TATP) in air in the ppm range. High and fast responses to these gases have been obtained. PMID:25521384

  16. Nanocrystalline Tin Oxide Nanofibers Deposited by a Novel Focused Electrospinning Method. Application to the Detection of TATP Precursors

    PubMed Central

    Santos, José Pedro; Fernández, Maria Jesús; Fontecha, José Luis; Matatagui, Daniel; Sayago, Isabel; Horrillo, Maria Carmen; Gracia, Isabel

    2014-01-01

    A new method of depositing tin dioxide nanofibers in order to develop chemical sensors is presented. It involves an electrospinning process with in-plane electrostatic focusing over micromechanized substrates. It is a fast and reproducible method. After an annealing process, which can be performed by the substrate heaters, it is observed that the fibers are intertwined forming porous networks that are randomly distributed on the substrate. The fiber diameters oscillate from 100 nm to 200 nm and fiber lengths reach several tens of microns. Each fiber has a polycrystalline structure with multiple nano-grains. The sensors have been tested for the detection of acetone and hydrogen peroxide (precursors of the explosive triacetone triperoxide, TATP) in air in the ppm range. High and fast responses to these gases have been obtained. PMID:25521384

  17. Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering

    SciTech Connect

    Fang, Feng; Zhang, Yeyu; Wu, Xiaoqin; Shao, Qiyue; Xie, Zonghan

    2015-08-15

    Graphical abstract: The best SnO{sub 2}:N TCO film: about 80% transmittance and 9.1 × 10{sup −4} Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO{sub 2}:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10{sup −4} Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO{sub 2}:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO{sub 2}:N films were amorphous state, and O/Sn ratios of SnO{sub 2}:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO{sub 2}:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO{sub 2}:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO{sub 2}:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10{sup −4} Ω cm.

  18. Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

    NASA Astrophysics Data System (ADS)

    Singaravelu, S.; Klopf, J. M.; Schriver, K. E.; Park, H. K.; Kelley, M. J.; Haglund, R. F.

    2014-03-01

    Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C-H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C-H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

  19. Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

    SciTech Connect

    Singaravelu, Senthil R.; Klopf, John M.; Schriver, Kenneth E.; Park, HyeKyoung; Kelley, Michael J.; Haglund, Jr., Richard F.

    2013-08-01

    Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C–H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C–H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

  20. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  1. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  2. Ubiquitous pentacene monolayer on metals deposited onto pentacene films.

    PubMed

    Jaeckel, B; Sambur, J B; Parkinson, B A

    2007-11-01

    Photoelectron spectroscopy (XPS and UPS) was used to study the deposition of metal layers (Ag, Cu, and Au) onto pentacene films. Very low work functions were measured (PhiAg = 3.91 eV, PhiCu = 3.93 eV, and PhiAu = 4.3 eV) for all of the metals, in agreement with results from the literature. The intensities of the C 1s core-level signals from pentacene that were monitored during stepwise metal deposition leveled off at a value of about 30% of a thick pentacene film. This C 1s intensity is comparable to that of one monolayer of pentacene deposited onto the respective metal. The valence band spectra of metals deposited onto pentacene and spectra collected for pentacene deposited onto bare metal surfaces are very similar. These findings lead to the conclusion that approximately one monolayer of pentacene is always present on top of the freshly deposited metal film, which explains the very low work function of the metals when they are deposited onto organic films. We expect similar behavior with other nonreactive metals deposited onto stable organic layers.

  3. Vacuum deposition of stoichiometric crystalline PbS films: The effect of sulfurizing environment during deposition

    NASA Astrophysics Data System (ADS)

    Singh, B. P.; Kumar, R.; Kumar, A.; Tyagi, R. C.

    2015-10-01

    Thin film of lead sulfide (PbS) was deposited onto highly cleaned glass and quartz substrates using a vacuum thermal evaporation technique. The effect of the sulfurizing environment on the growth and properties of vacuum-deposited PbS thin film was studied. The ambient sulfurizing environment was created by thermal decomposition of thiourea inside the vacuum chamber during deposition to maintain the stoichiometry and quality of the PbS film. The sulfurizing gas H2S, produced in the thermal decomposition of the solid sulfur containing thiourea readily combines with the cations (Pb2+) without leaving any anions (S2-) at the substrates and also has not produced any excess of sulfur at the substrates. The deposited film was characterized by optical spectroscopy, x-ray diffraction patterns, scanning electron micrographs with energy dispersive analysis of x-rays, and atomic force micrographs. The physical characterization of the deposited PbS film revealed that the surface of film grown in the sulfurizing environment improved and contained more stoichiometric sulfur in comparison to film deposited without the sulfurizing environment.

  4. Anomalous hysteresis properties of iron films deposited on liquid surfaces

    SciTech Connect

    Ye Quanlin; Feng Chunmu; Xu Xiaojun; Jin Jinsheng; Xia Agen; Ye Gaoxiang

    2005-07-01

    A nearly free sustained iron film system, deposited on silicone oil surfaces by vapor-phase deposition method, has been fabricated and its crystal structure as well as magnetic properties has been studied. Both the temperature-dependent coercivity H{sub c}(T) and exchange anisotropy field H{sub E}(T) of the iron films possess a maximum peak around the critical temperature T{sub crit}=10-15 and 4 K, respectively. Our experimental results show that the anomalous hysteresis properties mainly result from the oxide surfaces of the films with spin-glass-like phase below freezing temperature T{sub f}=30-50 K.

  5. Anomalous hysteresis properties of iron films deposited on liquid surfaces

    NASA Astrophysics Data System (ADS)

    Ye, Quan-Lin; Feng, Chun-Mu; Xu, Xiao-Jun; Jin, Jin-Sheng; Xia, A.-Gen; Ye, Gao-Xiang

    2005-07-01

    A nearly free sustained iron film system, deposited on silicone oil surfaces by vapor-phase deposition method, has been fabricated and its crystal structure as well as magnetic properties has been studied. Both the temperature-dependent coercivity Hc(T) and exchange anisotropy field HE(T) of the iron films possess a maximum peak around the critical temperature Tcrit=10-15 and 4K, respectively. Our experimental results show that the anomalous hysteresis properties mainly result from the oxide surfaces of the films with spin-glass-like phase below freezing temperature Tf=30-50K.

  6. Electro deposition of cuprous oxide for thin film solar cell applications

    NASA Astrophysics Data System (ADS)

    Shahrestani, Seyed Mohammad

    p and n type copper oxide semiconductor layers were fabricated by electrochemistry using new approaches for photovoltaic applications. Thin films were electroplated by cathodic polarization on a copper foil or indium tin oxide (ITO) substrates. The optimum deposition conditions (composition, pH and temperature of the electrolyte and applied potential) of the layers as thin films have been identified; in particular the conditions that allow getting the n-type layers have been well identified for the first time. The configuration of a photo - electrochemical cell was used to characterize the spectral response of the layers. It was shown that the p type layers exhibit a photocurrent in the cathode potential region and n layers exhibit photo current in the anode potential region. Measurements of electrical resistivity of electro chemically deposited layers of p and n type Cu2O, showed that the resistivity of p-type Cu2O varies from 3.2 x 105 to 2.0 x 108 Ocm. These values depend the electrodepositing conditions such as the pH of the solution, the deposition potential and temperature. The influence of several plating parameters of the p type layers of Cu2O, such as applied potential, pH and temperature of the bath on the chemical composition, degree of crystallinity, grain size and orientation parameters of the sample was systematically studied using X-ray diffraction and scanning electron microscopy. Depending of the electro-deposition potential, two different surface morphologies with various preferential crystal orientations were obtained for the temperatures of the electro-deposition of 30 °C and pH 9. For the same temperature, the layers of p type Cu2O of highly crystalline p type are obtained at pH 12, indicating that the crystallinity depends on the pH of the bath. Also, it has been shown that the morphology of Cu2O layers was changed by varying the potential and the duration of deposition, as well as the temperature of the solution. The conditions for the

  7. Development of a Co-deposition method for Deposition of Low-Contamination Pyrite Thin Films

    NASA Astrophysics Data System (ADS)

    Walimbe, Aditya

    Pyrite is a 0.95 eV bandgap semiconductor which is purported to have great potential in widespread, low--cost photovoltaic cells. A thorough material selection process was used in the design of a pyrite sequential vapor deposition chamber aimed at reducing and possibly eliminating contamination during thin film growth. The design process focused on identifying materials that do not produce volatile components when exposed to high temperatures and high sulfur pressures. Once the materials were identified and design was completed, the ultra--high vacuum growth system was constructed and tested. Pyrite thin films were deposited using the upgraded sequential vapor deposition chamber by varying the substrate temperature from 250°C to 420°C during deposition, keeping sulfur pressure constant at 1 Torr. Secondary Ion Mass Spectrometry (SIMS) results showed that all contaminants in the films were reduced in concentration by orders of magnitude from those grown with the previous system. Characterization techniques of Rutherford Back--scattering Spectrometry (RBS), X--Ray Diffraction (XRD), Raman Spectroscopy, Optical Profilometry and UV/Vis/Near--IR Spectroscopy were performed on the deposited thin films. The results indicate that stoichiometric ratio of S:Fe, structural--quality (epitaxy), optical roughness and percentage of pyrite in the deposited thin films improve with increase in deposition temperature. A Tauc plot of the optical measurements indicates that the pyrite thin films have a bandgap of 0.94 eV.

  8. Annealing effects on structural, electrical and optical properties of antimony-tinoxide thin films deposited by sol gel dip coating technique

    SciTech Connect

    Lekshmy, S. Sujatha Anitha, V. S. Berlin, I. John Joy, K.

    2014-01-28

    Antimony-doped tin dioxide possess interesting physical and chemical properties. These properties have a wide range of applications such as catalysis and optoelectronic devices. In the present study, antimony-doped tin oxide (SnO2:Sb) thin films were deposited on the quartz substrates by sol-gel dip coating technique. The films were annealed at temperatures 350°C, 550°C and 850°C in air for 2 hours. The structure and surface morphologies were observed by X-ray diffraction (XRD) and Scanning electron microscopy (SEM). XRD patterns shows tetragonal structure for the SnO2:Sb films annealed at different temperatures. Crystallite size increased from 6 to 14 nm as annealing temperature increased from 350°C to 850°C. SEM studies reveals crack free and smooth surface for all the films. The grains are found to be homogenously distributed for films annealed at higher temperature. The electrical conductivity of the films annealed at 350°C and 550°C decreased and increased for the films annealed at 850°C. The optical properties of the films were investigated in the UV-visible-NIR region (200-900 nm) using UV spectra. The transmittance of the films decreased for films annealed at higher temperature. The optical energy band gap values (4.13 eV-4.83 eV) increased with the increase in annealing temperature.

  9. Measuring Thicknesses Of Vacuum-Deposited Organic Thin Films

    NASA Technical Reports Server (NTRS)

    David, Carey E.

    1996-01-01

    Method of measuring thickness of thin organic liquid film deposited in vacuum involves use of quartz-crystal monitor (QCM) calibrated by use of witness plate that has, in turn, calibrated by measurement of absorption of infrared light in deposited material. Present procedure somewhat tedious, but once calibration accomplished, thicknesses of organic liquid deposits monitored in real time and in situ by use of QCM.

  10. Nickel hydroxide deposited indium tin oxide electrodes as electrocatalysts for direct oxidation of carbohydrates in alkaline medium

    NASA Astrophysics Data System (ADS)

    Ganesh, V.; Farzana, S.; Berchmans, Sheela

    In this work, the direct electrochemical oxidation of carbohydrates using nickel hydroxide modified indium tin oxide (ITO) electrodes in alkaline medium is demonstrated; suggesting the feasibility of using carbohydrates as a novel fuel in alkaline fuel cells applications. The chosen monosaccharides are namely glucose and fructose; disaccharides such as sucrose and lactose; and sugar acid like ascorbic acid for this study. ITO electrodes are chemically modified using a hexagonal lyotropic liquid crystalline phase template electrodeposition of nickel. Structural morphology, growth, orientation and electrochemical behaviour of Ni deposits are characterized using SEM, XRD, XPS and cyclic voltammetry (CV), respectively. Further electrochemical potential cycling process in alkaline medium is employed to convert these Ni deposits into corresponding nickel hydroxide modified electrodes. These electrodes are used as novel platform to perform the electrocatalytic oxidation of various carbohydrates in alkaline medium. It was found that bare and Ni coated ITO electrodes are inactive towards carbohydrates oxidation. The heterogeneous rate constant values are determined and calculated to be two orders of magnitude higher in the case of template method when compared to non-template technique. The observed effect is attributed to the synergistic effect of higher surface area of these deposits and catalytic ability of Ni(II)/Ni(III) redox couple.

  11. Chemical vapor deposition reactor. [providing uniform film thickness

    NASA Technical Reports Server (NTRS)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  12. TiO2-Coated Transparent Conductive Oxide (SnO2:F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen

    NASA Astrophysics Data System (ADS)

    Kambe, Mika; Sato, Kazuo; Kobayashi, Daisuke; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Fukawa, Makoto; Taneda, Naoki; Yamada, Akira; Konagai, Makoto

    2006-03-01

    The durability of textured transparent conductive oxide (TCO) thin films against atomic hydrogen was investigated. An ultrathin TiO2 layer of 2 nm thickness was deposited on textured fluorine-doped tin oxide (SnO2:F) films, successively by atmospheric pressure chemical vapor deposition (AP-CVD). TCO films with a TiO2 layer showed a higher optical transmittance and a lower resistivity after exposure to atomic hydrogen excited by very high frequency (VHF) plasma, while TCO films without a TiO2 layer showed a lower optical transmittance and a higher resistivity after the exposure. These TCO films were characterized by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) before and after the exposure to atomic hydrogen.

  13. Plasma deposition of polymer composite films incorporating nanocellulose whiskers

    NASA Astrophysics Data System (ADS)

    Samyn, P.; Airoudj, A.; Laborie, M.-P.; Mathew, A. P.; Roucoules, V.

    2011-11-01

    In a trend for sustainable engineering and functionalization of surfaces, we explore the possibilities of gas phase processes to deposit nanocomposite films. From an analysis of pulsed plasma polymerization of maleic anhydride in the presence of nanocellulose whiskers, it seems that thin nanocomposite films can be deposited with various patterns. By specifically modifying plasma parameters such as total power, duty cycle, and monomer gas pressure, the nanocellulose whiskers are either incorporated into a buckled polymer film or single nanocellulose whiskers are deposited on top of a polymeric film. The density of the latter can be controlled by modifying the exact positioning of the substrate in the reactor. The resulting morphologies are evaluated by optical microscopy, AFM, contact angle measurements and ellipsometry.

  14. Deposition and investigation of lanthanum-cerium hexaboride thin films

    SciTech Connect

    Kuzanyan, A.S. . E-mail: akuzan@ipr.sci.am; Harutyunyan, S.R.; Vardanyan, V.O.; Badalyan, G.R.; Petrosyan, V.A.; Kuzanyan, V.S.; Petrosyan, S.I.; Karapetyan, V.E.; Wood, K.S.; Wu, H.-D.

    2006-09-15

    Thin films of lanthanum-cerium hexaboride, the promising thermoelectric material for low-temperature applications, are deposited on various substrates by the electron-beam evaporation, pulsed laser deposition and magnetron sputtering. The influence of the deposition conditions on the films X-ray characteristics, composition, microstructure and physical properties, such as the resistivity and Seebeck coefficient, is studied. The preferred (100) orientation of all films is obtained from XRD traces. In the range of 780-800 deg. C deposition temperature the highest intensity of diffractions peaks and the highest degree of the preferred orientation are observed. The temperature dependence of the resistivity and the Seebeck coefficient of films are investigated in the temperature range of 4-300 K. The features appropriate to Kondo effect in the dependences {rho}(T) and S(T) are detected at temperatures below 20 K. Interplay between the value of the Seebeck coefficient, metallic parameters and Kondo scattering of investigated films is discussed. - Graphical abstract: Kondo scattering in (La,Ce)B{sub 6} films: temperature dependence of the resistivity of (La,Ce)B{sub 6} films on various substrates and the ceramics La{sub 0.99}Ce{sub 0.01}B{sub 6}.

  15. UV laser deposition of metal films by photogenerated free radicals

    NASA Technical Reports Server (NTRS)

    Montgomery, R. K.; Mantei, T. D.

    1986-01-01

    A novel photochemical method for liquid-phase deposition of metal films is described. In the liquid phase deposition scheme, a metal containing compound and a metal-metal bonded carbonyl complex are dissolved together in a polar solvent and the mixture is irradiated using a UV laser. The optical arrangement consists of a HeCd laser which provides 7 mW of power at a wavelength of 325 nm in the TEM(OO) mode. The beam is attenuated and may be expanded to a diameter of 5-20 mm. Experiments with photochemical deposition of silver films onto glass and quartz substrates are described in detail. Mass spectrometric analysis of deposited silver films indicated a deposition rate of about 1 A/s at incident power levels of 0.01 W/sq cm. UV laser-induced copper and palladium films have also been obtained. A black and white photograph showing the silver Van Der Pauw pattern of a solution-deposited film is provided.

  16. Room temperature ethanol sensors based on SnO2 films

    NASA Astrophysics Data System (ADS)

    Hakhoyan, Armen P.; Aroutiounian, Vladimir M.; Adamian, Zaven N.; Barseghian, Robert S.; Dolukhanian, Tigran

    2002-02-01

    The results presented in this paper demonstrate the possibility of using tin dioxide films as sensitive elements for alcohol sensors. The tin dioxide films were deposited by the spray pyrolysis method on alumina substrates as well as on n+ porous silicon upper layer of silicon diode structures. Room temperature, under atmospheric pressure measurements of the parameters of the obtained structures revealed their high sensitivity to the mixture of ethyl alcohol vapors and air. The optimum concentration of precursor solution for precipitation of tin dioxide films and technological regimes for the deposition of tin dioxide films and formation of a porous silicon layer with appropriate thickness and porosity by electrochemical anodization were found.

  17. thin films by an hybrid deposition configuration: pulsed laser deposition and thermal evaporation

    NASA Astrophysics Data System (ADS)

    Escobar-Alarcón, L.; Solís-Casados, D. A.; Perez-Alvarez, J.; Romero, S.; Morales-Mendez, J. G.; Haro-Poniatowski, E.

    2014-10-01

    The aim of this work was to report the application of an hybrid deposition configuration to deposit Titanium dioxide (TiO2) thin films modified with different amounts of bismuth (Bi:TiO2). The samples were synthesized combining a TiO2 laser ablation plasma with a flux of vapor of bismuth produced by thermal evaporation. By varying the deposition rate of Bi it was possible to control the amount of Bi incorporated in the film and consequently the film properties. A detailed compositional, structural, and optical characterization by XPS, RBS, Raman spectroscopy, and UV-Vis spectrometry techniques is discussed. Photocatalytic response of the deposited thin films was studied through the degradation of a malachite green solution.

  18. SEM Analysis of Electrophoretically-Deposited Nanoparticle Films

    NASA Astrophysics Data System (ADS)

    Verma, Neil

    Cobalt ferrite nanoparticles (20 nm) were synthesized and electrophoretically deposited onto aluminum foil, graphite paper, and carbon felt in order to study its potential as a cost-effective electrocatalyst for the oxidation of ammonium sulfite to ammonium sulfate in a proposed sulfur ammonia thermochemical cycle. Scanning electron microscopy and linear sweep voltammetry were used to characterize the deposited films and investigate their electrochemical activity. Furthermore, the effects of electrophoretic deposition conditions on deposit morphology and subsequently the effects of deposit morphology on electrochemical activity in 2 M ammonium sulfite were studied to better understand how to improve electrocatalysts. It was found that there is a critical deposit thickness for each substrate, where additional deposited particles reduce overall electrocatalytic activity of the deposits. For graphite paper, this thickness was estimated to be 3 particle layers for the EPD conditions studied. The 3 particle layer film on graphite paper resulted in a 5.5 fold increase in current density from a blank graphite paper substrate. For carbon felt, the deposit thickness threshold was calculated to be 0.13 of a particle layer for the EPD conditions studied. Moreover, this film was found to have a 4.3 fold increase in current density from a blank carbon felt substrate.

  19. Chromium carbide thin films deposited by ultra-short pulse laser deposition

    NASA Astrophysics Data System (ADS)

    Teghil, R.; Santagata, A.; De Bonis, A.; Galasso, A.; Villani, P.

    2009-06-01

    Pulsed laser deposition performed by a laser with a pulse duration of 250 fs has been used to deposit films from a Cr 3C 2 target. Due to the different processes involved in the laser ablation when it is performed by an ultra-short pulse source instead of a conventional short pulse one, it has been possible to obtain in vacuum films containing only one type of carbide, Cr 3C 2, as shown by X-ray photoelectron spectroscopy. On the other hand, Cr 3C 2 is not the only component of the films, since a large amount of amorphous carbon is also present. The films, deposited at room temperature, are amorphous and seem to be formed by the coalescence of a large number of particles with nanometric size. The film composition can be explained in terms of thermal evaporation from particles ejected from the target.

  20. Chemical vapour deposition of zeolitic imidazolate framework thin films

    NASA Astrophysics Data System (ADS)

    Stassen, Ivo; Styles, Mark; Grenci, Gianluca; Gorp, Hans Van; Vanderlinden, Willem; Feyter, Steven De; Falcaro, Paolo; Vos, Dirk De; Vereecken, Philippe; Ameloot, Rob

    2016-03-01

    Integrating metal-organic frameworks (MOFs) in microelectronics has disruptive potential because of the unique properties of these microporous crystalline materials. Suitable film deposition methods are crucial to leverage MOFs in this field. Conventional solvent-based procedures, typically adapted from powder preparation routes, are incompatible with nanofabrication because of corrosion and contamination risks. We demonstrate a chemical vapour deposition process (MOF-CVD) that enables high-quality films of ZIF-8, a prototypical MOF material, with a uniform and controlled thickness, even on high-aspect-ratio features. Furthermore, we demonstrate how MOF-CVD enables previously inaccessible routes such as lift-off patterning and depositing MOF films on fragile features. The compatibility of MOF-CVD with existing infrastructure, both in research and production facilities, will greatly facilitate MOF integration in microelectronics. MOF-CVD is the first vapour-phase deposition method for any type of microporous crystalline network solid and marks a milestone in processing such materials.

  1. Modified chemical route for deposition of molybdenum disulphide thin films

    SciTech Connect

    Vyas, Akshay N. Sartale, S. D.

    2014-04-24

    Molybdenum disulphide (MoS{sub 2}) thin films were deposited on quartz substrates using a modified chemical route. Sodium molybdate and sodium sulphide were used as precursors for molybdenum and sulphur respectively. The route involves formation of tetrathiomolybdate ions (MoS{sub 4}{sup 2−}) and further reduction by sodium borohydride to form MoS{sub 2}. The deposition was performed at room temperature. The deposited films were annealed in argon atmosphere at 1073 K for 1 hour to improve its crystallinity. The deposited films were characterized using scanning electron microscopy (SEM) for morphology, UV-Vis absorption spectroscopy for optical studies and X-ray diffraction (XRD) for structure determination.

  2. Chemical and Magnetic Order in Vapor-Deposited Metal Films

    NASA Astrophysics Data System (ADS)

    Rooney, Peter Wiliam

    1995-01-01

    A stochastic Monte Carlo model of vapor deposition and growth of a crystalline, binary, A_3 B metallic alloy with a negative energy of mixing has been developed which incorporates deposition and surface diffusion in a physically correct manner and allows the simulation of deposition rates that are experimentally realizable. The effects of deposition rate and growth temperature on the development of short range order (SRO) in vapor-deposited films have been examined using this model. SRO in the simulated films increases with growth temperature up to the point at which the temperature corresponds to the energy of mixing, but we see no corresponding development of anisotropic SRO (preferential ordering of A-B pairs along the growth direction). Epitaxial (100) and (111) CoPt_3 films have been deposited over a range of growth temperatures from -50^circ C to 800^circC. Curie temperature (T_{rm c}) and saturation magnetization are dramatically enhanced in those films grown near 400^circ C over the values expected for the chemically homogeneous alloy. Magnetization data indicates that the high T _{rm c} films are inhomogeneous. These phenomena are interpreted as evidence of a previously unobserved magnetically driven miscibility gap in the Co-Pt phase diagram. Films grown near 400^circ C exhibit large uniaxial perpendicular magnetic anisotropy that cannot be accounted for by strain. The observed anisotropy coincides with the chemical phase separation and it seems likely that these two phenomena are related. Long range order (LRO) in the as-deposited films peaks at a growth temperature of 630^circC and then decreases with decreasing growth temperature. The decrease in LRO is either due to kinetic frustration or to competition from magnetically induced Co clustering. Theoretical phase diagrams based on the appropriate Blume-Emery-Griffiths Hamiltonian suggest the latter.

  3. Sputter deposited Terfenol-D thin films for multiferroic applications

    NASA Astrophysics Data System (ADS)

    Mohanchandra, K. P.; Prikhodko, S. V.; Wetzlar, K. P.; Sun, W. Y.; Nordeen, P.; Carman, G. P.

    2015-09-01

    In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm) with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011) cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10-6.

  4. Heat treatment of cathodic arc deposited amorphous hard carbon films

    SciTech Connect

    Anders, S.; Ager, J.W. III; Brown, I.G.

    1997-02-01

    Amorphous hard carbon films of varying sp{sup 2}/sp{sup 3} fractions have been deposited on Si using filtered cathodic are deposition with pulsed biasing. The films were heat treated in air up to 550 C. Raman investigation and nanoindentation were performed to study the modification of the films caused by the heat treatment. It was found that films containing a high sp{sup 3} fraction sustain their hardness for temperatures at least up to 400 C, their structure for temperatures up to 500 C, and show a low thickness loss during heat treatment. Films containing at low sp{sup 3} fraction graphitize during the heat treatment, show changes in structure and hardness, and a considerable thickness loss.

  5. Structure, optical, and electrical properties of indium tin oxide thin films prepared by sputtering at room temperature and annealed in air or nitrogen

    SciTech Connect

    Guillen, C.; Herrero, J.

    2007-04-01

    Indium tin oxide (ITO) thin films have been grown onto soda-lime glass substrates by sputtering at room temperature with various oxygen to argon partial pressure ratios. After deposition, the samples have been annealed at temperatures ranging from 100 to 500 degree sign C in nitrogen or in air. The structure, optical, and electrical characteristics of the ITO coatings have been analyzed as a function of the deposition and the annealing parameters by x-ray diffraction, spectrophotometry, and Hall effect measurements. It has been found that the as-grown amorphous layers crystallize in the cubic structure by heating above 200 degree sign C. Simultaneously, the visible optical transmittance increases and the electrical resistance decreases, in proportions that depend mainly on the sputtering conditions. The lowest resistivity values have been obtained by annealing at 400 degree sign C in nitrogen, where the highest carrier concentrations are achieved, related to oxygen vacancy creation. Some relationships between the analyzed properties have been established, showing the dependence of the cubic lattice distortion and the infrared optical characteristics on the carrier concentration.

  6. Large-Scale Graphene Film Deposition for Monolithic Device Fabrication

    NASA Astrophysics Data System (ADS)

    Al-shurman, Khaled

    Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors. The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an urgent need for a new platform material to replace Si. Graphene is considered a promising material with enormous potential applications in many electronic and optoelectronics devices due to its superior properties. There are several techniques to produce graphene films. Among these techniques, chemical vapor deposition (CVD) offers a very convenient method to fabricate films for large-scale graphene films. Though CVD method is suitable for large area growth of graphene, the need for transferring a graphene film to silicon-based substrates is required. Furthermore, the graphene films thus achieved are, in fact, not single crystalline. Also, graphene fabrication utilizing Cu and Ni at high growth temperature contaminates the substrate that holds Si CMOS circuitry and CVD chamber as well. So, lowering the deposition temperature is another technological milestone for the successful adoption of graphene in integrated circuits fabrication. In this research, direct large-scale graphene film fabrication on silicon based platform (i.e. SiO2 and Si3N4) at low temperature was achieved. With a focus on low-temperature graphene growth, hot-filament chemical vapor deposition (HF-CVD) was utilized to synthesize graphene film using 200 nm thick nickel film. Raman spectroscopy was utilized to examine graphene formation on the bottom side of the Ni film

  7. Growth and physical property of epitaxial Co{sub 70}Fe{sub 30} thin film on Si substrate via TiN buffer

    SciTech Connect

    Ji, C.-X.; Lu Feng; Chang, Y. Austin; Yang, J. Joshua; Rzchowski, M. S.

    2008-01-14

    Epitaxial Co{sub 70}Fe{sub 30} films with the bcc structure were grown on a Si(001) substrate with TiN as a buffer by sputtering technique. The x-ray diffraction results confirmed the epitaxial nature of the films and the crystallographic relationship was determined as Co{sub 70}Fe{sub 30}(002)<110>//TiN(002)<100>//Si(004)<100>. The surface morphology characterized by atomic force microscopy on our films revealed that smooth surfaces could be obtained at growth temperatures below 350 deg. C. The strain state of 60 nm epitaxial Co{sub 70}Fe{sub 30} films was studied as a function of growth temperature. Magnetization hysteresis loops of the films grown at 300 deg. C were measured using superconducting quantum interface device magnetometer.

  8. Hybrid organotin and tin oxide-based thin films processed from alkynylorganotins: synthesis, characterization, and gas sensing properties.

    PubMed

    Renard, Laetitia; Brötz, Joachim; Fuess, Hartmut; Gurlo, Aleksander; Riedel, Ralf; Toupance, Thierry

    2014-10-01

    Hydrolysis-condensation of bis(triprop-1-ynylstannyl)butylene led to nanostructured bridged polystannoxane films yielding tin dioxide thin layers upon UV-treatment or annealing in air. According to Fourier transform infrared (FTIR) spectroscopy, contact angle measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) data, the films were composed of a network of aggregated "pseudo-particles", as calcination at 600 °C is required to form cassiterite nanocrystalline SnO2 particles. In the presence of reductive gases such as H2 and CO, these films gave rise to highly sensitive, reversible, and reproducible responses. The best selectivity toward H2 was reached at 150 °C with the hybrid thin films that do not show any response to CO at 20-200 °C. On the other hand, the SnO2 films prepared at 600 °C are more sensitive to H2 than to CO with best operating temperature in the 300-350 °C range. This organometallic approach provides an entirely new class of gas-sensing materials based on a class II organic-inorganic hybrid layer, along with a new way to include organic functionality in gas sensing metal oxides. PMID:25192546

  9. Formation of Copper Zinc Tin Sulfide Thin Films from Colloidal Nanocrystal Dispersions via Aerosol-Jet Printing and Compaction.

    PubMed

    Williams, Bryce A; Mahajan, Ankit; Smeaton, Michelle A; Holgate, Collin S; Aydil, Eray S; Francis, Lorraine F

    2015-06-01

    A three-step method to create dense polycrystalline semiconductor thin films from nanocrystal liquid dispersions is described. First, suitable substrates are coated with nanocrystals using aerosol-jet printing. Second, the porous nanocrystal coatings are compacted using a weighted roller or a hydraulic press to increase the coating density. Finally, the resulting coating is annealed for grain growth. The approach is demonstrated for making polycrystalline films of copper zinc tin sulfide (CZTS), a new solar absorber composed of earth-abundant elements. The range of coating morphologies accessible through aerosol-jet printing is examined and their formation mechanisms are revealed. Crack-free albeit porous films are obtained if most of the solvent in the aerosolized dispersion droplets containing the nanocrystals evaporates before they impinge on the substrate. In this case, nanocrystals agglomerate in flight and arrive at the substrate as solid spherical agglomerates. These porous coatings are mechanically compacted, and the density of the coating increases with compaction pressure. Dense coatings annealed in sulfur produce large-grain (>1 μm) polycrystalline CZTS films with microstructure suitable for thin-film solar cells. PMID:25989610

  10. Hybrid organotin and tin oxide-based thin films processed from alkynylorganotins: synthesis, characterization, and gas sensing properties.

    PubMed

    Renard, Laetitia; Brötz, Joachim; Fuess, Hartmut; Gurlo, Aleksander; Riedel, Ralf; Toupance, Thierry

    2014-10-01

    Hydrolysis-condensation of bis(triprop-1-ynylstannyl)butylene led to nanostructured bridged polystannoxane films yielding tin dioxide thin layers upon UV-treatment or annealing in air. According to Fourier transform infrared (FTIR) spectroscopy, contact angle measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) data, the films were composed of a network of aggregated "pseudo-particles", as calcination at 600 °C is required to form cassiterite nanocrystalline SnO2 particles. In the presence of reductive gases such as H2 and CO, these films gave rise to highly sensitive, reversible, and reproducible responses. The best selectivity toward H2 was reached at 150 °C with the hybrid thin films that do not show any response to CO at 20-200 °C. On the other hand, the SnO2 films prepared at 600 °C are more sensitive to H2 than to CO with best operating temperature in the 300-350 °C range. This organometallic approach provides an entirely new class of gas-sensing materials based on a class II organic-inorganic hybrid layer, along with a new way to include organic functionality in gas sensing metal oxides.

  11. Passivation properties of aluminum oxide films deposited by mist chemical vapor deposition for solar cell applications

    NASA Astrophysics Data System (ADS)

    Miki, Shohei; Iguchi, Koji; Kitano, Sho; Hayakashi, Koki; Hotta, Yasushi; Yoshida, Haruhiko; Ogura, Atsushi; Satoh, Shin-ichi; Arafune, Koji

    2015-08-01

    Aluminum oxide (AlOx) films were deposited by mist chemical vapor deposition (MCVD) in air for p-type crystalline silicon, and the effects of the deposition temperature (Tdep) and AlOx film thickness on the maximum surface recombination velocities (Smax) were evaluated. It was found that Smax was improved with increasing Tdep. The AlOx film deposited at 400 °C exhibited the best Smax value of 2.8 cm/s, and the passivation quality was comparable to that of AlOx deposited by other vacuum-based techniques. Smax was also improved with increasing film thickness. When the film thickness was above 10 nm, Smax was approximately 10 cm/s. From the Fourier transform infrared spectra, it was found that the AlOx films deposited by MCVD consisted of an AlOx layer and a Si-diffused AlOx layer. In addition, it is important for the layers to be thick enough to obtain high-quality passivation.

  12. Growth, characterization and post-processing of inorganic and hybrid organic-inorganic thin films deposited using atomic and molecular layer deposition techniques

    NASA Astrophysics Data System (ADS)

    Abdulagatov, Aziz Ilmutdinovich

    Atomic layer deposition (ALD) and molecular layer deposition (MLD) are advanced thin film coating techniques developed for deposition of inorganic and hybrid organic-inorganic films respectively. Decreasing device dimensions and increasing aspect ratios in semiconductor processing has motivated developments in ALD. The beginning of this thesis will cover study of new ALD chemistry for high dielectric constant Y 2O3. In addition, the feasibility of conducting low temperature ALD of TiN and TiAlN is explored using highly reactive hydrazine as a new nitrogen source. Developments of these ALD processes are important for the electronics industry. As the search for new materials with more advanced properties continues, attention has shifted toward exploring the synthesis of hierarchically nanostructured thin films. Such complex architectures can provide novel functions important to the development of state of the art devices for the electronics industry, catalysis, energy conversion and memory storage as a few examples. Therefore, the main focus of this thesis is on the growth, characterization, and post-processing of ALD and MLD films for fabrication of novel composite (nanostructured) thin films. Novel composite materials are created by annealing amorphous ALD oxide alloys in air and by heat treatment of hybrid organic-inorganic MLD films in inert atmosphere (pyrolysis). The synthesis of porous TiO2 or Al2O3 supported V2O5 for enhanced surface area catalysis was achieved by the annealing of inorganic TiVxOy and AlV xOy ALD films in air. The interplay between phase separation, surface energy difference, crystallization, and melting temperature of individual oxides were studied for their control of film morphology. In other work, a class of novel metal oxide-graphitic carbon composite thin films was produced by pyrolysis of MLD hybrid organic-inorganic films. For example, annealing in argon of titania based hybrid films enabled fabrication of thin films of intimately

  13. Parametric study on electrochemical deposition of copper nanoparticles on an ultrathin polypyrrole film deposited on a gold film electrode.

    PubMed

    Zhou, X J; Harmer, A J; Heinig, N F; Leung, K T

    2004-06-01

    Monoshaped and monosized copper nanostructured particles have been prepared by potentiostatic electrochemical deposition on an ultrathin polypyrrole (PPY) film, electrochemically grown on a Si(100) substrate sputter-coated with a thin gold film or gold-film electrode (GFE). The crystal size and the number density of the copper nanocrystals have been examined by varying several deposition parameters, including the thickness of the gold film, the PPY film thickness, the applied potential, and the Cu2+ and the electrolyte concentrations for copper deposition. Optimal conditions for uniform growth ofnanocrystals well-dispersed on the GFE have been determined, along with insight into the mechanism of crystal growth. A minimum gold film thickness of 80 nm is required to eliminate the effects of the gold-silicon interface. The PPY film thickness and homogeneity principally affect the shape uniformity of the nanocrystals, while the copper deposition potential could be used to regulate the size and number density of the nanocrystals. Both the Cu2+ and electrolyte concentrations are also found to play important roles in controlling the electrodeposition of nanocrystal growth.

  14. Lactic acid aided electrochemical deposition of c -axis preferred orientation of zinc oxide thin films: Structural and morphological features

    NASA Astrophysics Data System (ADS)

    Whang, Thou-Jen; Hsieh, Mu-Tao; Tsai, Jia-Ming; Lee, Shyan-Jer

    2011-09-01

    Compact and homogeneous c-axis preferred orientation of zinc oxide (ZnO) films on indium tin oxide (ITO) coated glass have been prepared electrochemically at -1.2 V vs. Ag|AgCl in a weak acidic condition from 0.06 M Zn(NO 3) 2 with 3 mM lactic acid (LA) added. LA was found having strong influence on the electrodeposition of c-axis preferred orientation of zinc oxide films. Other experimental variables such as deposition temperature, potential, and precursor concentration were also conducted in this article. Among these variables, it was found that precursor concentration of zinc nitrate influenced significantly on growth direction and crystal diameter of zinc oxide. Cyclic voltammetry was used to observe the electrochemistry of the deposition. Crystallinities of the films were examined by X-ray diffractometer. The morphologies of zinc oxide films were observed with a field emitting scanning electron microscope. Optical characteristics of zinc oxide layers were measured with UV-vis spectrophotometer. The band gap of the deposited zinc oxide thin films was evaluated from the Tauc relationship of ( αhν) 2 vs. hν, which was found to be 3.31 eV.

  15. Mechanical properties improvement of pulsed laser-deposited hydroxyapatite thin films by high energy ion-beam implantation

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Pelletier, H.; Müller, D.; Broll, N.; Mille, P.; Ristoscu, C.; Mihailescu, I. N.

    2002-01-01

    Major problems in the hydroxyapatite (HA), Ca 5(PO 4) 3OH, thin films processing still keep the poor mechanical properties and the lack in density. We present a study on the feasibility of high energy ion-beam implantation technique to densify HA bioceramic films. Crystalline HA films were grown by pulsed laser deposition (PLD) method using an excimer KrF ∗ laser ( λ=248 nm, τ FWHM≥20 ns). The films were deposited on Ti-5Al-2.5Fe alloys substrates previously coated with a ceramic TiN buffer layer. After deposition the films were implanted with Ar + ions at high energy. Optical microscopy (OM), white light confocal microscopy (WLCM), grazing incidence X-ray diffraction (GIXRD) and Berkovich nanoindentation in normal and scratch options have been applied for the characterization of the obtained structures. We put into evidence an enhancement of the mechanical characteristics after implantation, while GIXRD measurements confirm that the crystalline structure of HA phase is preserved. The improvement in mechanical properties is an effect of a densification after ion treatment as a result of pores elimination and grains regrowth.

  16. Solid-state source of atomic oxygen for low-temperature oxidation processes: Application to pulsed laser deposition of TiO2:N films

    NASA Astrophysics Data System (ADS)

    Ojima, Daiki; Chiba, Tetsuya; Shima, Kazunari; Hiramatsu, Hidenori; Hosono, Hideo; Hayashi, Katsuro

    2012-02-01

    An atomic oxygen (AO) source has been redesigned to coordinate with a pulsed laser deposition system and used to grow nitrogen-doped TiO2 films by deposition of TiN and simultaneous irradiation of the substrate with AO. The AO source uses an incandescently heated thin tube of zirconia as an oxygen permeation media to generate pure AO of low kinetic energy. The emission flux is calibrated using a silver-coated quartz crystal microbalance. The thin shape of the probe and transverse emission geometry of this emission device allow the emission area to be positioned close to the substrate surface, enhancing the irradiation flux at the substrate. AO irradiation is crucial for formation of TiO2 phases via oxidation of the deposited TiN laser plume, and is effective for decrease of the substrate temperature for crystallization of anatase phase to as low as around 200 °C.

  17. Methods for making deposited films with improved microstructures

    DOEpatents

    Patten, James W.; Moss, Ronald W.; McClanahan, Edwin D.

    1982-01-01

    Methods for improving microstructures of line-of-sight deposited films are described. Columnar growth defects ordinarily produced by geometrical shadowing during deposition of such films are eliminated without resorting to post-deposition thermal or mechanical treatments. The native, as-deposited coating qualities, including homogeneity, fine grain size, and high coating-to-substrate adherence, can thus be retained. The preferred method includes the steps of emitting material from a source toward a substrate to deposit a coating non-uniformly on the substrate surface, removing a portion of the coating uniformly over the surface, again depositing material onto the surface, but from a different direction, and repeating the foregoing steps. The quality of line-of-sight deposited films such as those produced by sputtering, progressively deteriorates as the angle of incidence between the flux and the surface becomes increasingly acute. Depositing non-uniformly, so that the coating becomes progressively thinner as quality deteriorates, followed by uniformly removing some of the coating, such as by resputtering, eliminates the poor quality portions, leaving only high quality portions of the coating. Subsequently sputtering from a different direction applies a high quality coating to other regions of the surface. Such steps can be performed either simultaneously or sequentially to apply coatings of a uniformly high quality, closed microstructure to three-dimensional or larger planar surfaces.

  18. Reduction of the Casimir Force from Indium Tin Oxide Film by UV Treatment

    SciTech Connect

    Chang, C.-C.; Banishev, A. A.; Mohideen, U.; Klimchitskaya, G. L.; Mostepanenko, V. M.

    2011-08-26

    A significant decrease in the magnitude of the Casimir force (from 21% to 35%) was observed after an indium tin oxide sample interacting with an Au sphere was subjected to the UV treatment. Measurements were performed by using an atomic force microscope in high vacuum. The experimental results are compared with theory and a hypothetical explanation for the observed phenomenon is proposed.

  19. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, Kevin C.; Kodas, Toivo T.

    1994-01-01

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  20. Pulsed laser deposition of niobium nitride thin films

    SciTech Connect

    Farha, Ashraf Hassan Elsayed-Ali, Hani E.; Ufuktepe, Yüksel; Myneni, Ganapati

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  1. Pulsed laser deposition of niobium nitride thin films

    NASA Astrophysics Data System (ADS)

    Farha, Ashraf Hassan; Ufuktepe, Yüksel; Myneni, Ganapati; Elsayed-Ali, Hani E.

    2015-12-01

    Niobium nitride (NbNx) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbNx films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ˜40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbNx films from mixed β-Nb2N and cubic δ-NbN phases to single hexagonal β-Nb2N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbNx deposited on Si(100) were also investigated. The NbNx films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbNx film morphology and phase.

  2. Chemical vapor deposition and characterization of titanium dioxide thin films

    NASA Astrophysics Data System (ADS)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  3. Vapor-deposited porous films for energy conversion

    DOEpatents

    Jankowski, Alan F.; Hayes, Jeffrey P.; Morse, Jeffrey D.

    2005-07-05

    Metallic films are grown with a "spongelike" morphology in the as-deposited condition using planar magnetron sputtering. The morphology of the deposit is characterized by metallic continuity in three dimensions with continuous and open porosity on the submicron scale. The stabilization of the spongelike morphology is found over a limited range of the sputter deposition parameters, that is, of working gas pressure and substrate temperature. This spongelike morphology is an extension of the features as generally represented in the classic zone models of growth for physical vapor deposits. Nickel coatings were deposited with working gas pressures up 4 Pa and for substrate temperatures up to 1000 K. The morphology of the deposits is examined in plan and in cross section views with scanning electron microscopy (SEM). The parametric range of gas pressure and substrate temperature (relative to absolute melt point) under which the spongelike metal deposits are produced appear universal for other metals including gold, silver, and aluminum.

  4. Deposition of moisture barrier films by catalytic CVD using hexamethyldisilazane

    NASA Astrophysics Data System (ADS)

    Ohdaira, Keisuke; Matsumura, Hideki

    2014-01-01

    Hexamethyldisilazane (HMDS) is utilized to deposit moisture barrier films by catalytic chemical vapor deposition (Cat-CVD). An increase in the thickness of silicon oxynitride (SiOxNy) films leads to a better water-vapor transmission rate (WVTR), indicating that Cat-CVD SiOxNy films deposited using HMDS do not severely suffer from cracking. A WVTR on the order of 10-3 g m-2 day-1 can be realized by a Cat-CVD SiOxNy film formed using HMDS on a poly(ethylene terephthalate) (PET) substrate without any stacking structures at a substrate temperature of as low as 60 °C. X-ray reflectivity (XRR) measurement reveals that a film density of >2.0 g/cm3 is necessary for SiOxNy films to demonstrate an effective moisture barrier ability. The use of HMDS will give us safer production of moisture barrier films because of its non-explosive and non-toxic nature.

  5. Film synthesis on powders by cathodic arc plasma deposition

    SciTech Connect

    Anders, A.; Anders, S.; Brown, I.G.; Ivanov, I.C.

    1995-04-01

    Cathodic arc plasma deposition was used to coat Al{sub 2}O{sub 3} powder (mesh size 60) with platinum. The power particles were moved during deposition using a mechanical system operating at a resonance frequency of 20 Hz. Scanning electron microscopy and Auger electron microscopy show that all particles are completely coated with a platinum film having a thickness of about 100 nm. The actual deposition time was only 20 s, thus the deposition rate was very high (5 nm/s).

  6. Structure and characteristics of C3N4 thin films prepared by rf plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Dawei, Wu; Dejun, Fu; Huaixi, Guo; Zhihong, Zhang; Xianquan, Meng; Xiangjun, Fan

    1997-08-01

    C3N4 films were prepared on Si(111) by rf plasma-enhanced chemical vapor deposition using Si3N4/TiN and Si3N4/ZrN as transition layers. X-ray diffraction and transmission electron diffraction revealed that the films deposited have a polycrystalline structure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy confirmed the presence of sp3 and sp2 hybridized C atoms tetrahedrally and hexagonally bonded with N atoms, respectively. The nitrogen concentration was calculated from the XPS spectra. Graphite-free C3N4 films were obtained under optimal conditions. The Vickers hardness of the C3N4 films falls in the range of 2950-5100 kgf/mm2. The C3N4 films exhibit high resistance against acid and electrochemical etching. Thermal gravimetric and differential thermal analysis showed that the films are thermally stable at temperatures ranging from room temperature to 1200 °C.

  7. Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zheng, Li; Cheng, Xinhong; Cao, Duo; Wang, Zhongjian; Xia, Chao; Yu, Yuehui; Shen, Dashen

    2014-01-01

    Al2O3 films are deposited directly onto graphene by H2O-based atomic layer deposition (ALD), and the films are pinhole-free and continuously cover the graphene surface. The growth process of Al2O3 films does not introduce any detective defects in graphene, suppresses the hysteresis effect and tunes the graphene doping to n-type. The self-cleaning of ALD growth process, together with the physically absorbed H2O and oxygen-deficient ALD environment consumes OH- bonds, suppresses the p-doping of graphene, shifts Dirac point to negative gate bias and enhances the electron mobility.

  8. Dynamics of a pulsed laser generated tin plasma expanding in an oxygen atmosphere

    NASA Astrophysics Data System (ADS)

    Barreca, F.; Fazio, E.; Neri, F.; Barletta, E.; Trusso, S.; Fazio, B.

    2005-10-01

    Semiconducting tin oxide can be successfully deposited by means of the laser ablation technique. In particular by ablating metallic tin in a controlled oxygen atmosphere, thin films of SnOx have been deposited. The partial oxygen pressure at which the films are deposited strongly influences both the stoichiometry and the structural properties of the films. In this work, we present a study of the expansion dynamics of the plasma generated by ablating a tin target by means of a pulsed laser using time and space resolved optical emission spectroscopy and fast photography imaging of the expanding plasma. Both Sn I and Sn II optical emission lines have been observed from the time-integrated spectroscopy. Time resolved-measurements revealed the dynamics of the expanding plasma in the ambient oxygen atmosphere. Stoichiometry of the films has been determined by means of X-ray photoelectron spectroscopy and correlated to the expansion dynamics of the plasma.

  9. The production of niobium-tin powders by vapor-deposition processes

    NASA Astrophysics Data System (ADS)

    Yorucu, H.; Sale, F. R.

    1992-01-01

    The concomitant reduction of SnCl2 and NbCl5 with hydrogen has been investigated for the production of NbSn2 upon static Nb substrates and upon fluidized Nb and A12O3 seed particles. The maximum reaction temperature studied was 800 °C since NbSn2 is not stable above 845 °C. NbSn2 has been produced on niobium strip at 700 °C from a vapor phase containing SnCl2 and NbCl5 of ratio 2.6:1. However, the same vapor phase, and ones containing a ratio of up to 5:1, SnCl2 to NbCl5, have been shown to yield only Nb3Sn upon fluidized particles over the temperature range 650 to 750 °C. This observation is explained in terms of an enhanced vapor etching reaction that occurs with Nb seed particles and the inability to nucleate a tin-rich liquid phase, which appears to be necessary for the growth of NbSn2, upon the alumina seed particles.

  10. The production of niobium-tin powders by vapor-deposition processes

    NASA Astrophysics Data System (ADS)

    Yorucu, H.; Sale, F. R.

    1982-12-01

    The concomitant reduction of SnCl2 and NbCl5 with hydrogen has been investigated for the production of NbSn2 upon static Nb substrates and upon fluidized Nb and Al2O3 seed particles. The maximum reaction temperature studied was 800°C since NbSn2 is not stable above 845°C. NbSn2 has been produced on niobium strip at 700°C from a vapor phase containing SnCl2 and NbCl5 of ratio 2.6:1. However, the same vapor phase, and ones containing a ratio of up to 5:1, SnCl2 to NbCl5, have been shown to yield only Nb3Sn upon fluidized particles over the temperature range 650 to 750°C. This observation is explained in terms of an enhanced vapor etching reaction that occurs with Nb seed particles and the inability to nucleate a tin-rich liquid phase, which appears to be necessary for the growth of NbSn2, upon the alumina seed particles.

  11. Combustion chemical vapor deposition: A novel thin-film deposition technique

    SciTech Connect

    Hunt, A.T.; Carter, W.B.; Cochran, J.K. Jr. )

    1993-07-12

    A new open-atmosphere chemical vapor deposition (CVD) technique has been developed that we term combustion chemical vapor deposition (CCVD). During CCVD a flame provides the necessary environment for the deposition of a dense film whose elemental constituents are derived from solution, vapor, or gas sources. Ag, YSZ, BaTiO[sub 3], YIG, YBa[sub 2]Cu[sub 3]O[sub [ital x

  12. Fractal structure of films deposited in a tokamak

    NASA Astrophysics Data System (ADS)

    Budaev, V. P.; Khimchenko, L. N.

    2007-04-01

    The surface of amorphous films deposited in the T-10 tokamak was studied in a scanning tunnel microscope. The surface relief on a scale from 10 nm to 100 μm showed a stochastic surface topography and revealed a hierarchy of grains. The observed variety of irregular structures of the films was studied within the framework of the concept of scale invariance using the methods of fractal geometry and statistical physics. The experimental probability density distribution functions of the surface height variations are close in shape to the Cauchy distribution. The stochastic surface topography of the films is characterized by a Hurst parameter of H = 0.68-0.85, which is evidence of a nontrivial self-similarity of the film structure. The fractal character and porous structure of deposited irregular films must be considered as an important issue related to the accumulation of tritium in the ITER project. The process of film growth on the surface of tokamak components exposed to plasma has been treated within the framework of the general concept of inhomogeneous surface growth. A strong turbulence of the edge plasma in tokamaks can give rise to fluctuations in the incident flux of particles, which leads to the growth of fractal films with grain dimensions ranging from nano-to micrometer scale. The shape of the surface of some films found in the T-10 tokamak has been interpreted using a model of diffusion-limited aggregation (DLA). The growth of films according to the discrete DLA model was simulated using statistics of fluctuations observed in a turbulent edge plasma of the T-10 tokamak. The modified DLA model reproduces well the main features of the surface of some films deposited in tokamaks.

  13. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    DOEpatents

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  14. Biocompatible interface films deposited within porous polymers by Atomic Layer Deposition (ALD).

    PubMed

    Liang, Xinhua; Lynn, Aaron D; King, David M; Bryant, Stephanie J; Weimer, Alan W

    2009-09-01

    Ultrathin ceramic films were deposited throughout highly porous poly(styrene-divinylbenzene) (PS-DVB) particles using a low-temperature atomic layer deposition (ALD) process. Alumina and titania films were deposited by alternating reactions of trimethylaluminum and H2O at 33 degrees C and of titanium tetrachloride and H2O2 (50 wt % in H2O) at 100 degrees C, respectively. Analytical characterization revealed that conformal alumina and titania films were grown on internal and external polymer surfaces. The improved bioactivity of the polymer substrates was revealed on the basis of the formation of hydroxyapatite (HA) in simulated body fluid. The accelerated formation of HA on the ALD-modified polymer surface was caused by the negatively charged surface provided by the ultrathin ceramic interface. The potential for ALD films to support cell attachment was demonstrated.

  15. Ultraviolet laser deposition of graphene thin films without catalytic layers

    NASA Astrophysics Data System (ADS)

    Sarath Kumar, S. R.; Alshareef, H. N.

    2013-01-01

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  16. Atomic Layer Deposition of Ir−Pt Alloy Films;

    SciTech Connect

    Christensen, S. T.; Elam, J. W.

    2010-01-01

    Atomic layer deposition (ALD) was used to prepare thin-film mixtures of iridium and platinum. By controlling the ratio between the iridium(III) acetylacetonate/oxygen cycles for Ir ALD and the (trimethyl)methylcyclopentadienyl platinum(IV)/oxygen cycles for Pt ALD, the Ir/Pt ratio in the films could be controlled precisely. We first examined the growth mechanisms for the pure Ir and Pt ALD films, as well as the mixed-metal Ir-Pt ALD films, using in situ quartz crystal microbalance and quadrupole mass spectrometer measurements. These studies revealed that the nucleation and growth of each of the noble metals proceeds smoothly, with negligible perturbation caused by the presence of the other metal. As a consequence of this mutual compatibility, the composition, as well as the growth per cycle for the Ir-Pt films, followed rule-of-mixtures formulas that were based on the ratio of the metal ALD cycles and the growth rates of pure Ir and Pt ALD. X-ray diffraction (XRD) measurements revealed that the films deposit as single-phase alloys in which the lattice parameter varies linearly with the composition. Similar to the pure noble-metal films, the Ir-Pt alloy films grow conformally on high-aspect-ratio trenches. This capability should open up new opportunities in microelectronics, catalysis, and other applications.

  17. Laser deposition of large-area thin films

    SciTech Connect

    Kuzanyan, A S; Petrosyan, V A; Pilosyan, S Kh; Nesterov, V M

    2011-03-31

    A new method for fabricating large-area thin films of uniform thickness on a rotating substrate is proposed. Its distinctive features are (i) the presence of a diaphragm, partially transmitting the evaporated material, between the target and substrate and (ii) the translatory motion of the rotating substrate with respect to the target at a certain velocity. The method proposed makes it possible to obtain thin films of uniform thickness on substrates with sizes limited by only the deposition chamber size. The method is experimentally verified by depositing thin CuO films on silicon substrates placed over the radius of a disk 300 mm in diameter. The deviation of the film thickness from the average value does not exceed {+-}3% throughout the entire radius, which confirms good prospects of this method for microelectronics, optical industry, and other modern technologies. (laser technology)

  18. A new approach to the deposition of nanostructured biocatalytic films

    NASA Astrophysics Data System (ADS)

    Troitsky, V. I.; Berzina, T. S.; Pastorino, L.; Bernasconi, E.; Nicolini, C.

    2003-06-01

    In the present work, monolayer engineering was used to fabricate biocatalytic nanostructured thin films based on the enzyme penicillin G acylase. The biocatalytic films with enhanced characteristics were produced by the deposition of alternate-layer assemblies with a predetermined structure using a combination of Langmuir-Blodgett and adsorption techniques. The value of enzyme activity and the level of protein detachment were measured in dependence on the variation of film composition and on the sequence of layer alternation. As a result, highly active and stable structures were found, which could be promising candidates for practical applications. The method of modification of the deposition method to provide continuous film formation on large-area supports is discussed.

  19. Supercritical Fluid Immersion Deposition: A New Process for Selective Deposition of Metal Films on Silicon Substrates

    SciTech Connect

    Ye, Xiangrong; Wai, Chien M.; Lin, Yuehe; Young, James S.; Engelhard, Mark H.

    2005-01-01

    Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.

  20. Spray pyrolysis deposition and photoelectrochemical properties of n-type BiOI nanoplatelet thin films.

    PubMed

    Hahn, Nathan T; Hoang, Son; Self, Jeffrey L; Mullins, C Buddie

    2012-09-25

    Bismuth oxy-iodide is a potentially interesting visible-light-active photocatalyst; yet there is little research regarding its photoelectrochemical properties. Herein we report the synthesis of BiOI nanoplatelet photoelectrodes by spray pyrolysis on fluorine-doped tin oxide substrates at various temperatures. The films exhibited n-type conductivity, most likely due to the presence of anion vacancies, and optimized films possessed incident photon conversion efficiencies of over 20% in the visible range for the oxidation of I(-) to I(3)(-) at 0.4 V vs Ag/AgCl in acetonitrile. Visible-light photons (λ > 420 nm) contributed approximately 75% of the overall photocurrent under AM1.5G illumination, illustrating their usefulness under solar light illumination. A deposition temperature of 260 °C was found to result in the best performance due to the balance of morphology, crystallinity, impurity levels, and optical absorption, leading to photocurrents of roughly 0.9 mA/cm(2) at 0.4 V vs Ag/AgCl. Although the films performed stably in acetonitrile, their performance decreased significantly upon extended exposure to water, which was apparently caused by a loss of surface iodine and subsequent formation of an insulating bismuth hydroxide layer. PMID:22891667

  1. X-ray photoemission study of manganese thin films deposited on a layered semiconductor

    NASA Astrophysics Data System (ADS)

    Mirabella, F.; Parkinson, B. A.; Ghijsen, J.

    2004-02-01

    Germanium sulphide (GeS) and tin diselenide (SnSe2) present anisotropic properties due to their layered crystal structures. These crystals are composed of atomic layers interacting with each other by van der Waals forces only. Recently these materials have been used to prepare a new diluted magnetic semiconductor (DMS) by substituting some Ge or Sn atoms by manganese in the crystal lattice, forming Ge1-xMnxS and Sn1-xMnxSe2. To compare Mn behaviour within the layered crystals, Mn/GeS and Mn/SnSe2 thin films have been grown and investigated in situ by X-ray induced photoemission. Here is reported the XPS analysis of in situ grown Mn/SnSe2 for coverage ranging from sub-monolayer to thin films. The properties of these films were investigated from the structural and reactivity point of view. XPS measurements suggest that an Mn-Sn alloy is formed at the interface and that Mn atoms first deposit as an atomic netting pattern dictated by the typical structure of the SnSe2 (001) surface.

  2. Substrates suitable for deposition of superconducting thin films

    DOEpatents

    Feenstra, Roeland; Boatner, Lynn A.

    1993-01-01

    A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  3. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  4. Deposition of YBCO films by high temperature spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Shields, T. C.; Abell, J. S.; Button, T. W.; Chakalov, R. A.; Chakalova, R. I.; Cai, C.; Haessler, W.; Eickemeyer, J.; de Boer, B.

    2002-08-01

    The fabrication of YBCO coated conductors on flexible textured metallic substrates requires the deposition of biaxially textured buffer layers and superconducting films. In this study we have prepared YBCO thin films on single crystal SrTiO 3 substrates and cube textured Ni substrates by spray pyrolysis. The Ni substrates have been pre-buffered with CeO 2/YSZ/CeO 2, layers deposited by pulsed laser deposition. Spray pyrolysis of nitrate solutions has been performed directly on heated substrates at temperatures between 800 and 900 °C without need for a subsequent annealing step. YBCO films deposited on both types of substrate are biaxially textured. Full width half maximum values determined from φ-scans are 8° and 20° for films on SrTiO 3 and buffered Ni substrates respectively. A transport Jc value of 1.2×10 5 A/cm 2 at 77 K and zero field has been achieved on SrTiO 3 ( T c onset=91 K, ΔTc=6 K). χ ac susceptibility measurements of films on buffered Ni substrates show Tc onsets of 88 K with ΔTc=18 K.

  5. Liquid phase deposition synthesis of hexagonal molybdenum trioxide thin films

    SciTech Connect

    Deki, Shigehito; Beleke, Alexis Bienvenu; Kotani, Yuki; Mizuhata, Minoru

    2009-09-15

    Hexagonal molybdenum trioxide thin films with good crystallinity and high purity have been fabricated by the liquid phase deposition (LPD) technique using molybdic acid (H{sub 2}MoO{sub 4}) dissolved in 2.82% hydrofluoric acid (HF) and H{sub 3}BO{sub 3} as precursors. The crystal was found to belong to a hexagonal hydrate system MoO{sub 3}.nH{sub 2}O (napprox0.56). The unit cell lattice parameters are a=10.651 A, c=3.725 A and V=365.997 A{sup 3}. Scanning electron microscope (SEM) images of the as-deposited samples showed well-shaped hexagonal rods nuclei that grew and where the amount increased with increase in reaction time. X-ray photon electron spectroscopy (XPS) spectra showed a Gaussian shape of the doublet of Mo 3d core level, indicating the presence of Mo{sup 6+} oxidation state in the deposited films. The deposited films exhibited an electrochromic behavior by lithium intercalation and deintercalation, which resulted in coloration and bleaching of the film. Upon dehydration at about 450 deg. C, the hexagonal MoO{sub 3}.nH{sub 2}O was transformed into the thermodynamically stable orthorhombic phase. - Abstract: SEM photograph of typical h-MoO{sub 3}.nH{sub 2}O thin film nuclei obtained after 36 h at 40 deg. C by the LPD method. Display Omitted

  6. Pulsed Nd:YAG laser deposition of ruthenium thin films

    NASA Astrophysics Data System (ADS)

    Wai Keat, Lee

    Ruthenium (Ru) is one of the noble air-stable transition metals, which has excellent thermal chemical stability, low electrical resistivity, and relatively high work function near the valence band edge of Si. Recently, Ru has been introduced into the semiconductor industries as a result of the interesting chemical, physical, and electrical properties it possessed. So far, investigations of ruthenium films have been centered on material properties of Ru layers, growth using direct current/radiofrequency (DC/RF) magnetron sputtering, and chemical vapor deposition. However, comparatively little work has been carried out using the pulsed laser deposition (PLD) technique. In this research work, the growth of Ru film using PLD was investigated. The Ru films were deposited on silicon (Si) substrates employing 355 nm pulsed Nd:YAG laser source. Laser fluence ranged from 2 to 8 J/cm2 was employed, with deposition duration from 5 to 180 minutes under high vacuum condition. Optical emission spectroscopy (OES) was employed to study the species and purity of the plasma during the deposition. It was observed that intensity of the Ru species spectra increased with increasing laser fluence and more prominent after laser fluence of 4 J/cm2. No impurities were observed. Film thicknesses ranging from 15 to 280 nm were obtained. As the deposition duration and the laser fluence increased, the thickness of the deposited Ru films increased. It is observed that there was a critical deposition duration value, and this value increases as the laser fluence increased. X-ray diffraction (XRD) spectra showed Ru with crystalline orientation of (101), (100), and (002) peaks. The XRD results revealed an enhanced diffraction peak when film thickness increased, under all laser fluences. Grain sizes were deduced from the XRD data by using the Scherrer's formula and the values fall in the range of 20 to 35 nm for the film thickness covering from 50 nm to 250 nm. Besides, the electrical properties of

  7. Deposition Of Pinhole-Free CoSi2 Film

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon; Fathauer, Robert N.; Grunthaner, Paula J.

    1989-01-01

    New fabrication method produces pinhole-free film of cobalt silicide on silicon substrate. In new method, cobalt and silicon evaporated from electron-beam sources onto substrate of silicon having <111> crystal orientation. Materials deposited in stoichiometric ratio of two silicon atoms to one of cobalt, yielding single-crystal CoSi2 film 5 to 10 nm thick. Layer of amorphous silicon 1 to 2 nm thick deposited on CoSi2. Specimen then annealed at 550 degree C for 10 min. Absence of pinholes critical to operation of multilayer devices employing CoSi2 layers, such as metal base transistor.

  8. Studies on atomic layer deposition of IRMOF-8 thin films

    SciTech Connect

    Salmi, Leo D. Heikkilä, Mikko J.; Vehkamäki, Marko; Puukilainen, Esa; Ritala, Mikko; Sajavaara, Timo

    2015-01-15

    Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260–320 °C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOF-ERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd){sub 2} (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) as the precursor.

  9. Pulsed laser deposition of anatase thin films on textile substrates

    NASA Astrophysics Data System (ADS)

    Krämer, André; Kunz, Clemens; Gräf, Stephan; Müller, Frank A.

    2015-10-01

    Pulsed laser deposition (PLD) is a highly versatile tool to prepare functional thin film coatings. In our study we utilised a Q-switched CO2 laser with a pulse duration τ ≈ 300 ns, a laser wavelength λ = 10.59 μm, a repetition frequency frep = 800 Hz and a peak power Ppeak = 15 kW to deposit crystalline anatase thin films on carbon fibre fabrics. For this purpose, preparatory experiments were performed on silicon substrates to optimise the anatase deposition conditions including the influence of different substrate temperatures and oxygen partial pressures. Processing parameters were then transferred to deposit anatase on carbon fibres. Scanning electron microscopy, X-ray diffraction analyses, Raman spectroscopy and tactile profilometry were used to characterise the samples and to reveal the formation of phase pure anatase without the occurrence of a secondary rutile phase. Methanol conversion test were used to prove the photocatalytic activity of the coated carbon fibres.

  10. Pulsed laser deposition of hydroxyapatite thin films on Ti-5Al-2.5Fe substrates with and without buffer layers

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Ristoscu, C.; Chiritescu, C.; Ghica, C.; Mihailescu, I. N.; Pelletier, H.; Mille, P.; Cornet, A.

    2000-12-01

    We present a method for processing hydroxyapatite (HA) thin films on Ti-5Al-2.5Fe substrates. The films were grown by pulsed laser deposition (PLD) in vacuum at room temperature, using a KrF∗ excimer laser. The amorphous as-deposited HA films were recrystallized in ambient air by a thermal treatment at 550°C. The best results have been obtained when inserting a buffer layer of ceramic materials (TiN, ZrO2 or Al2O3). The films were characterized by complementary techniques: grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), cross-section transmission electron microscopy (XTEM), SAED, energy dispersive X-ray spectroscopy (EDS) and nanoindentation. The samples with buffer interlayer preserve the stoichiometry are completely recrystallized and present better mechanical characteristics as compared with that without buffer interlayer.

  11. Superconducting YBa2Cu3O(7-delta) thin films on GaAs with conducting indium-tin-oxide buffer layers

    NASA Astrophysics Data System (ADS)

    Kellett, B. J.; Gauzzi, A.; James, J. H.; Dwir, B.; Pavuna, D.

    1990-12-01

    Superconducting YBa2Cu3O(7-delta) (YBCO) thin films have been grown in situ on GaAs with conducting indium-tin-oxide (ITO) buffer layers. Superconducting onset is about 92 K with zero resistance at 60 K. ITO buffer layers usually form Schottky-like barriers on GaAs. The YBCO film and ITO buffer layer, grown by ion beam sputter codeposition, are textured and polycrystalline with a combined room-temperature resistivity of about 1 milliohm cm.

  12. Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

    SciTech Connect

    Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian

    2013-01-15

    Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

  13. Process for thin film deposition of cadmium sulfide

    DOEpatents

    Muruska, H. Paul; Sansregret, Joseph L.; Young, Archie R.

    1982-01-01

    The present invention teaches a process for depositing layers of cadmium sulfide. The process includes depositing a layer of cadmium oxide by spray pyrolysis of a cadmium salt in an aqueous or organic solvent. The oxide film is then converted into cadmium sulfide by thermal ion exchange of the O.sup.-2 for S.sup.-2 by annealing the oxide layer in gaseous sulfur at elevated temperatures.

  14. Oxide films: low-temperature deposition and crystallization

    NASA Astrophysics Data System (ADS)

    Park, Sangmoon; Herman, Gregory S.; Keszler, Douglas A.

    2003-10-01

    Thin films of CeO 2 and (Ce,Sm)O 2 have been prepared by using the SILAR method of deposition in conjunction with hydrothermal and high-temperature annealing. Low-temperature, low-pressure hydrothermal annealing of amorphous Mn:Zn 2GeO 4 films has lead to the growth of grains having edge lengths near 1 μm. Thick films of crystalline Zn 2SiO 4 exhibiting limited cracking have been prepared by a doctor-blade method also in conjunction with hydrothermal dehydration and annealing.

  15. Multichamber Integrated Deposition System For Silicon Based Dielectric Films

    NASA Astrophysics Data System (ADS)

    Lucovsky, Gerald; Tsu, David V.; Parsons, Gregory N.; Kim, Sang S.

    1989-03-01

    This paper discusses the design and operation of a multichamber integrated processing system with in situ surface analysis capabilities. The system has been designed specifically for the deposition of silicon based dielectric thin films by the process of remote plasma-enhanced chemical-vapor deposition (Remote PECVD), and for the formation of microelectronic device heterostructures. In order to achieve these objectives the system includes the following: (1) two substrate-introduction load-lock chambers; (2) a semiconductor substrate processing chamber; (3) a dielectric deposition chamber, specifically configured for the remote PECVD process; (4) a surface analysis chamber including Reflection High Energy Electron Diffraction (RHEED) and Auger Electron Spectroscopy (AES); and (5) inter-chamber substrate transfer in a UHV compatible environment. We will discuss the deposition chamber in some detail and describe the way in which it is designed to meet the requirements for the Remote PECVD process reactions. We also describe an auxiliary deposition/analysis system, which provides both deposition process diagnostics, Mass Spectrometry (MS) and Optical Emission Spectroscopy (OES), and thin film deposition by Remote PECVD. These two systems taken together have provided a research capability for: (1) identifying the deposition process reactions; and (2) fabricating elementary microelectronic device structures, such as MOS and/or MIS capacitors.

  16. Deposition and characterization of aluminum magnesium boride thin film coatings

    NASA Astrophysics Data System (ADS)

    Tian, Yun

    Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (< 3 x 10-6 Torr), accompanied by strong texture formation. Low vacuum level-as deposited AlMgB14 films have low hardness (10 GPa), but high vacuum level-as deposited AlMgB14 films exhibit an extremely high hardness (45 GPa - 51 GPa), and the higher deposition temperature results in still higher hardness

  17. Coaxial carbon plasma gun deposition of amorphous carbon films

    NASA Technical Reports Server (NTRS)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  18. Formation of ultrasmooth thin silver films by pulsed laser deposition

    SciTech Connect

    Kuznetsov, I. A.; Garaeva, M. Ya.; Mamichev, D. A. Grishchenko, Yu. V.; Zanaveskin, M. L.

    2013-09-15

    Ultrasmooth thin silver films have been formed on a quartz substrate with a buffer yttrium oxide layer by pulsed laser deposition. The dependence of the surface morphology of the film on the gas (N{sub 2}) pressure in the working chamber and laser pulse energy is investigated. It is found that the conditions of film growth are optimal at a gas pressure of 10{sup -2} Torr and lowest pulse energy. The silver films formed under these conditions on a quartz substrate with an initial surface roughness of 0.3 nm had a surface roughness of 0.36 nm. These films can be used as a basis for various optoelectronics and nanoplasmonics elements.

  19. Friction and wear of plasma-deposited diamond films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Garscadden, Alan; Barnes, Paul N.; Jackson, Howard E.

    1993-01-01

    Reciprocating sliding friction experiments in humid air and in dry nitrogen and unidirectional sliding friction experiments in ultrahigh vacuum were conducted with a natural diamond pin in contact with microwave-plasma-deposited diamond films. Diamond films with a surface roughness (R rms) ranging from 15 to 160 nm were produced by microwave-plasma-assisted chemical vapor deposition. In humid air and in dry nitrogen, abrasion occurred when the diamond pin made grooves in the surfaces of diamond films, and thus the initial coefficients of friction increased with increasing initial surface roughness. The equilibrium coefficients of friction were independent of the initial surface roughness of the diamond films. In vacuum the friction for diamond films contacting a diamond pin arose primarily from adhesion between the sliding surfaces. In these cases, the initial and equilibrium coefficients of friction were independent of the initial surface roughness of the diamond films. The equilibrium coefficients of friction were 0.02 to 0.04 in humid air and in dry nitrogen, but 1.5 to 1.8 in vacuum. The wear factor of the diamond films depended on the initial surface roughness, regardless of environment; it increased with increasing initial surface roughness. The wear factors were considerably higher in vacuum than in humid air and in dry nitrogen.

  20. Germanium films by polymer-assisted deposition

    DOEpatents

    Jia, Quanxi; Burrell, Anthony K.; Bauer, Eve; Ronning, Filip; McCleskey, Thomas Mark; Zou, Guifu

    2013-01-15

    Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

  1. Diamond deposition on polycrystalline films of cubic boron nitride

    SciTech Connect

    Friedmann, T.A.; Bernardez, L.J.; McCarty, K.F.; Klaus, E.J.; Ottesen, D.K.; Johnsen, H.A.; Clift, W.M. )

    1993-09-06

    We have grown diamond films on films of cubic boron nitride (cBN). The cBN films were grown on Si(100) substrates using ion-assisted pulsed laser deposition. Fourier transform infrared (FTIR) spectroscopy indicated that the BN films contained [similar to]75% [ital sp][sup 3]-bonded cBN. The as-grown cBN films were inserted with no surface pretreatment (e.g., abrading or scratching) into a conventional hot filament diamond reactor. [ital In] [ital situ] Raman spectroscopy was used to confirm diamond synthesis during growth. The nucleation density of the diamond films was estimated at 1[times]10[sup 9]/cm[sup 2], equivalent to or higher than the best values for scratched silicon substrates. In addition, we found that the cBN films were etched in the diamond reactor; a film thickness [approx gt]1500 A was required to prevent total film loss before diamond nucleation occurred. The presence of cBN under the diamond was established using FTIR spectroscopy and Auger electron spectroscopy.

  2. The Effect of Deposition Temperature to Photoconductivity Properties of Amorphous Carbon Thin Films Deposited By Thermal CVD

    NASA Astrophysics Data System (ADS)

    Mohamad, F.; Suriani, A. B.; Noor, U. M.; Rusop, M.

    2010-07-01

    Amorphous carbon (a-C) thin films were deposited by thermal chemical vapor deposition (CVD) using camphor oil on quartz substrates. The photoconductivity and optical properties of the thin films were studied with varying the deposition temperatures ranging from 650 to 900 °C. The film deposited at 750 °C shows large photoconductivity compare to other films. The optical characterization shows that the optical band gap of the thin films decreased from 0.65 to ˜0.0eV with increasing the deposition temperature due to the increase of sp2 bonded carbon configuration. The electrical conductivity of the thin films grown at higher temperature is much higher compared with the thin films deposited at low temperature.

  3. The influence of dopant distribution on the optoelectronic properties of tin-doped indium oxide nanocrystals and nanocrystal films

    NASA Astrophysics Data System (ADS)

    Lounis, Sebastien Dahmane

    Colloidally prepared nanocrystals of transparent conducting oxide (TCO) semiconductors have emerged in the past decade as an exciting new class of plasmonic materials. In recent years, there has been tremendous progress in developing synthetic methods for the growth of these nanocrystals, basic characterization of their properties, and their successful integration into optoelectronic and electrochemical devices. However, many fundamental questions remain about the physics of localized surface plasmon resonance (LSPR) in these materials, and how their optoelectronic properties derive from their underlying structural properties. In particular, the influence of the concentration and distribution of dopant ions and compensating defects on the optoelectronic properties of TCO nanocrystals has seen little investigation. Indium tin oxide (ITO) is the most widely studied and commercially deployed TCO. Herein we investigate the role of the distribution of tin dopants on the optoelectronic properties of colloidally prepared ITO nanocrystals. Owing to a high free electron density, ITO nanocrystals display strong LSPR absorption in the near infrared. Depending on the particular organic ligands used, they are soluble in various solvents and can readily be integrated into densely packed nanocrystal films with high conductivities. Using a combination of spectroscopic techniques, modeling and simulation of the optical properties of the nanocrystals using the Drude model, and transport measurements, it is demonstrated herein that the radial distribution of tin dopants has a strong effect on the optoelectronic properties of ITO nanocrystals. ITO nanocrystals were synthesized in both surface-segregated and uniformly distributed dopant profiles. Temperature dependent measurements of optical absorbance were first combined with Drude modeling to extract the internal electrical properties of the ITO nanocrystals, demonstrating that they are well-behaved degenerately doped semiconductors

  4. Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

    NASA Astrophysics Data System (ADS)

    Hwang, Ah Young; Kim, Sang Tae; Ji, Hyuk; Shin, Yeonwoo; Jeong, Jae Kyeong

    2016-04-01

    Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 °C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm2/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (VTH) of 1.5 V, and ION/OFF ratio of ˜107. A significant improvement in the field-effect mobility (up to ˜33.5 cm2/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, VTH, or ION/OFF ratio due to the presence of a highly ordered microstructure.

  5. Subgap states in p-channel tin monoxide thin-film transistors from temperature-dependent field-effect characteristics

    NASA Astrophysics Data System (ADS)

    Jeong, Chan-Yong; Lee, Daeun; Han, Young-Joon; Choi, Yong-Jin; Kwon, Hyuck-In

    2015-08-01

    This paper experimentally investigates the subgap density of states (DOS) in p-type tin monoxide (SnO) thin-film transistors (TFTs) for the first time by using temperature-dependent field-effect measurements. As the temperature increases, the turn-on voltage moves in the positive direction, and the off-current and subthreshold slope continuously increase. We found that the conductivity of the SnO TFT obeys the Meyer-Neldel (MN) rule with a characteristic MN parameter of 28.6 eV-1 in the subthreshold region, from which we successfully extracted the subgap DOS by combing the field-effect method and the MN relation. The extracted subgap DOS from fabricated p-type SnO TFTs are exponentially distributed in energy, and exhibit around two orders of magnitude higher values compared to those of the n-type amorphous indium-gallium-zinc oxide TFTs.

  6. Effect of Deposition Temperature on the Properties of TIO2 Thin Films Deposited by Mocvd

    NASA Astrophysics Data System (ADS)

    Khalifa, Zaki S.

    2016-02-01

    Crystal structure, microstructure, and optical properties of TiO2 thin films deposited on quartz substrates by metal-organic chemical vapor deposition (MOCVD) in the temperature range from 250∘C to 450∘C have been studied. The crystal structure, thickness, microstructure, and optical properties have been carried out using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), and UV-visible transmittance spectroscopy, respectively. XRD patterns show that the obtained films are pure anatase. Simultaneously, the crystal size calculated using XRD peaks, and the grain size measured by AFM decrease with the increase in deposition temperature. Moreover, the texture of the films change and roughness decrease with the increase in deposition temperature. The spectrophotometric transmittance spectra have been used to calculate the refractive index, extinction coefficient, dielectric constant, optical energy gap, and porosity of the deposited films. While the refractive index and dielectric constant decrease with the increase of deposition temperature, the porosity shows the opposite.

  7. Combustion chemical vapor deposition - A novel thin-film deposition technique

    NASA Astrophysics Data System (ADS)

    Hunt, A. T.; Carter, W. B.; Cochran, J. K., Jr.

    1993-07-01

    A new open-atmosphere chemical vapor deposition (CVD) technique has been developed that we term combustion chemical vapor deposition (CCVD). During CCVD a flame provides the necessary environment for the deposition of a dense film whose elemental constituents are derived from solution, vapor, or gas sources. Ag, YSZ, BaTiO3, YIG, YBa2Cu3O(x), and Y2BaCuO5 have been deposited via CCVD with the combustion of a sprayed, cation-containing, organic solution as the sole heat source. CCVD could, for some applications, be less expensive and more flexible than conventional CVD.

  8. Surface Treatment and Characterization of Indium-Tin-Oxide Thin Films Modified Using Cyclonic Atmospheric-Pressure Plasma

    NASA Astrophysics Data System (ADS)

    Tsai, Ching-Yuan; Huang, Chun

    2013-05-01

    The surface characteristics of indium-tin-oxide (ITO) films modified using cyclonic atmospheric-pressure plasma were investigated by static contact angle (CA) analysis as well as atomic force microscopy (AFM). The surface modification effects of plasma operational conditions including treatment time, plasma power, gas flow rate, and distance of nozzle to the substrate on the ITO surface features were examined. Cyclonic atmospheric pressure plasma-modified ITO films showed a significant decrease in static water contact angle. The surface energy calculated by the Owens-Wendt method primarily increased from the polar component after cyclonic atmospheric pressure plasma treatment. The glow feature and luminous plasma species in the cyclonic atmospheric pressure plasma were identified by optical emission spectroscopy (OES). Atomic force microscopy revealed that the cyclonic atmospheric pressure plasma-modified ITO surface showed a slightly increased surface roughness and a similar morphology to the untreated ITO surface. As a result, it is believed that this cyclonic atmospheric pressure plasma alters the ITO surface physicochemical features, which can in turn improve ITO films performance for various applications.

  9. Effect of channel layer thickness on the performance of indium-zinc-tin oxide thin film transistors manufactured by inkjet printing.

    PubMed

    Avis, Christophe; Hwang, Hye Rim; Jang, Jin

    2014-07-23

    We report the fabrication of high field-effect mobility of ∼110 cm(2)/(V s) for inkjet printed indium-zinc-tin oxide (IZTO) thin film transistors (TFTs). It is found that the morphology of IZTO material deposited by inkjet printing depends strongly on its thickness. When the thickness is 35 nm, IZTO is an homogeneous amorphous material and the TFT exhibits mobility over 100 cm(2)/(V s) and on/off current ratio of >10(6). However, when the thickness is 85 nm, IZTO has a two layer structure of homogeneous and heterogeneous materials and thus the TFT exhibited a mobility of ∼20 cm(2)/(V s). When the thickness is 800 nm, the morphology is porous and heterogeneous and thus the on/off current ratio is less than 1 × 10(3) and its mobility is ∼14 cm(2)/(V s). It is concluded therefore that homogeneous amorphous IZTO TFT on Al2O3 gate insulator can show high mobility, which can be achieved by thin layer formation by inkjet printing.

  10. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  11. Spatial atomic layer deposition of zinc oxide thin films.

    PubMed

    Illiberi, A; Roozeboom, F; Poodt, P

    2012-01-01

    Zinc oxide thin films have been deposited at high growth rates (up to ~1 nm/s) by spatial atomic layer deposition technique at atmospheric pressure. Water has been used as oxidant for diethylzinc (DEZ) at deposition temperatures between 75 and 250 °C. The electrical, structural (crystallinity and morphology), and optical properties of the films have been analyzed by using Hall, four-point probe, X-ray diffraction, scanning electron microscopy, spectrophotometry, and photoluminescence, respectively. All the films have c-axis (100) preferential orientation, good crystalline quality and high transparency (∼ 85%) in the visible range. By varying the DEZ partial pressure, the electrical properties of ZnO can be controlled, ranging from heavily n-type conductive (with 4 mOhm.cm resistivity for 250 nm thickness) to insulating. Combining the high deposition rates with a precise control of functional properties (i.e., conductivity and transparency) of the films, the industrially scalable spatial ALD technique can become a disruptive manufacturing method for the ZnO-based industry.

  12. Biomimetic lithography and deposition kinetics of iron oxyhydroxide thin films

    SciTech Connect

    Rieke, P.C.; Wood, L.L.; Marsh, B.M.; Fryxell, G.E.; Engelhard, M.H.; Baer, D.R.; Tarasevich, B.J. |; John, C.M.

    1993-12-01

    Heterogeneous nucleation and crystal growth on functionalized organic substrates is a critical step in biological hard tissue formation. Self assembled monolayers can be derivatized with various organic functional groups to mimic the ``nucleation proteins`` for induction of mineral growth. Studies of nucleation and growth on SAMs can provide a better understanding of biomineralization and can also form the basis of a superior thin film deposition process. We demonstrate that micron-scale, electron and ion beam, lithographic techniques can be used to pattern SAMs with functional organic groups that either inhibit or promote mineral deposition. Patterned films of iron oxyhydroxide were deposited on the areas patterned with nucleation sites. Studies of the deposition kinetic of these films show that indeed the surface induces heterogeneous nucleation and that film formation does not occur via absorption of polymers or colloidal material formed homogeneously in solution. The nucleus interfacial free energy was calculated to be 24 mJ/m2 on a SAM surface composed entirely of sulfonate groups.

  13. Electron cyclotron resonance deposition of diamond-like films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.

    1990-01-01

    Electron cyclotron resonance (ECR) microwave plasma CVD has been developed at low pressures (0.0001 - 0.01 torr) and at ambient and high substrate temperatures (up to 750 C), to achieve large-area (greater than 4 in. diameter) depositions of diamondlike amorphous carbon (a - C:H) films. The application of a RF bias to the substrate stage, which induces a negative self-bias voltage, is found to play a critical role in determining carbon bonding configurations and in modifying the film morphology. There are two distinct types of ECR-deposited diamondlike films. One type of diamondlike film exhibits a Raman spectrum consisting of broad and overlapping, graphitic D (1360/cm, line width = 280/cm) and G (1590/cm, line width 140/cm) lines, and the other type has a broad Raman peak centered at appoximately 1500/cm. Examination of plasma species by optical emission spectroscopy shows no correlation between the CH-asterisk emission intensity and the deposition rate of diamondklike films.

  14. Microenergetic Shock Initiation Studies on Deposited Films of PETN

    NASA Astrophysics Data System (ADS)

    Tappan, Alexander S.; Wixom, Ryan R.; Trott, Wayne M.; Long, Gregory T.; Knepper, Robert; Brundage, Aaron L.; Jones, David A.

    2009-06-01

    Films of the high explosive PETN (pentaerythritol tetranitrate) up to 500-μm thick have been deposited through physical vapor deposition, with the intent of creating well-defined samples for shock-initiation studies. PETN films were characterized with surface profilometry, scanning electron microscopy, x-ray diffraction, and focused ion beam nanotomography. These high-density films were subjected to strong shocks in both the in-plane and out-of-plane orientations. Initiation behavior was monitored with high-speed framing and streak camera photography. Direct initiation with a donor explosive (either RDX with binder, or CL-20 with binder) was possible in both orientations, but with the addition of a thin aluminum buffer plate (in-plane configuration only), initiation proved to be difficult due to the attenuated shock and the high density of the PETN films. Mesoscale models of microenergetic samples were created using the shock physics code CTH and compared with experimental results. The results of these experiments will be discussed in the context of small sample geometry, deposited film morphology, and density.

  15. Control of Thin Liquid Film Morphology During Solvent-Assisted Film Deposition

    SciTech Connect

    Evmenenko, G.; Stripe, B; Dutta, P

    2010-01-01

    Liquid films of different silicate esters were deposited from volatile solvents on hydroxylated and hydrogen-passivated silicon surfaces. We show that adsorption of silicate ester molecules and the resulting structural morphology of the liquid films not only are determined by attractive van der Waals forces with contributions from electrostatic interactions between the silicone ester moieties and oxide surface sites but also can be tuned by modifying the substrate surface or by changing the liquid-solvent interactions. Our results also show the importance of the conformational properties of liquid molecules and their rearrangements at the liquid/solid interface for controlled solvent-assisted film deposition.

  16. YBCO thin film evaporation on as-deposited silver film on MgO

    NASA Astrophysics Data System (ADS)

    Azoulay, J.

    1999-11-01

    YBa 2Cu 3O 7- δ (YBCO) thin film was evaporated on as-deposited Ag buffer layer on MgO substrate. A simple, inexpensive vacuum system equipped with one resistively heated source was used. The subsequent heat treatment was carried out under low oxygen partial pressure at a relatively low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using DC four-probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). It is shown that YBCO thin film can grow on as-deposited thin silver layer on MgO substrate.

  17. Vacuum deposited polymer/metal films for optical applications

    SciTech Connect

    Affinito, J.D.; Martin, P.M.; Gross, M.E.; Coronado, C.; Greenwell, E.

    1995-04-01

    Vacuum deposited Polymer/Silver/Polymer reflectors and Tantalum/Polymer/Aluminum Fabry-Perot interference filters were fabricated in a vacuun web coating operation on polyester substrates with a new, high speed deposition process. Reflectivities were measured in the wavelength range from 0.3 to 0.8{mu}m. This new vacuum processing technique has been shown to be capable of deposition line speeds in excess of 500 linear meters/minute. Central to this technique is a new position process for the high rate deposition of polymer films. This polymer process involves the flash evaporation of an acrylic monomer onto a moving substrate. The monomer is subsequently cured by an electron beam or ultraviolet light. This high speed polymer film deposition process has been named the PML process -- for Polymer Multi-Layer. Also, vacuum deposited, index matched, polymer/CaF{sub 2} composites were fabricated from monomer slurries that were subsequently cured with LTV light. This second technique is called the Liquid Multi-Layer (or LML) process. Each of these polymer processes is compatible with each other and with conventional vacuum deposition processes such as sputtering or evaporation.

  18. Duality and genetic significance of REE speciation in tourmaline from tin deposits of the Far East

    NASA Astrophysics Data System (ADS)

    Gorelikova, N. V.; Balashov, F. V.; Bychkova, Ya. V.; Minervina, E. A.; Korostelev, P. G.; Magazina, O. L.; Bortnikov, N. S.

    2016-04-01

    The distribution of REEs and some minor elements in tourmalines of different associations and deposits of the Russian Far East is studied by the methods of ICP-MS, ICP-MS with laser ablation and scanning electron microscopy. The duality of REE speciation in tourmaline is established: in high-temperature varieties, most REEs (mainly HREEs) are incorporated in rare minerals (monazite, xenotime, zircon, and F-Ce-Y carbonate), whereas hydrothermal ores are characterized by isomorphic incorporation of LREEs in the mineral structure, as well as by a fine admixture of zircon at the expense of detrital clasts in flyschoid rocks with the zones of tourmalinization.

  19. Deposition of Thin Film Using a Surface Acoustic Wave Device

    NASA Astrophysics Data System (ADS)

    Murochi, Nobuaki; Sugimoto, Mitsunori; Matsui, Yoshikazu; Kondoh, Jun

    2007-07-01

    When a Rayleigh surface acoustic wave (SAW) propagates at a liquid/solid interface, it radiates its energy into the adjacent liquid. If a liquid droplet is loaded on the SAW propagation surface, droplet vibration, streaming, jetting, and atomization are observed. These phenomena are called SAW streaming. In this paper, a novel thin-film deposition method based on the atomization of SAW streaming phenomena is proposed. The liquid with film material is loaded on the SAW propagation surface and the liquid is atomized. The atomization direction depends on the Rayleigh angle, which is determined by the sound velocity in the liquid and the SAW velocity. For easy fabrication of a thin uniform film, the atomization direction is controlled in the perpendicular direction. Using the developed system, the deposition of pigments in ink is carried out. The results observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) indicate that a pigment layer is formed on a glass plate.

  20. Supercapacitors using carbon nanotubes films by electrophoretic deposition

    NASA Astrophysics Data System (ADS)

    Du, Chunsheng; Pan, Ning

    Multi-walled carbon nanotube (MWNT) thin films have been fabricated by electrophoretic deposition technique in this study. The supercapacitors built from such thin film electrodes have exhibited near-ideal rectangular cyclic voltammograms even at a scan rate as high as 1000 mV s -1 and a high specific power density over 20 kW kg -1. More importantly, the supercapacitors showed superior frequency response, with a frequency 'knee' at about 7560 Hz, which is more than 70 times higher than the highest 'knee' frequency (100 Hz) so far reported for such supercapacitors. Our study also demonstrated that these carbon nanotube thin films can serve as a coating layer over ordinary current collectors to drastically enhance the electrode performance, indicating the huge potential in supercapacitor and battery manufacturing. Finally, it is clear that electrophoretic deposition is a promising technique for massive fabrication of carbon nanotube electrodes for various electronic devices.

  1. Thermodynamics of deposition flux-dependent intrinsic film stress

    PubMed Central

    Saedi, Amirmehdi; Rost, Marcel J.

    2016-01-01

    Vapour deposition on polycrystalline films can lead to extremely high levels of compressive stress, exceeding even the yield strength of the films. A significant part of this stress has a reversible nature: it disappears when the deposition is stopped and re-emerges on resumption. Although the debate on the underlying mechanism still continues, insertion of atoms into grain boundaries seems to be the most likely one. However, the required driving force has not been identified. To address the problem we analyse, here, the entire film system using thermodynamic arguments. We find that the observed, tremendous stress levels can be explained by the flux-induced entropic effects in the extremely dilute adatom gas on the surface. Our analysis justifies any adatom incorporation model, as it delivers the underlying thermodynamic driving force. Counterintuitively, we also show that the stress levels decrease, if the barrier(s) for adatoms to reach the grain boundaries are decreased. PMID:26888311

  2. Thermodynamics of deposition flux-dependent intrinsic film stress

    NASA Astrophysics Data System (ADS)

    Saedi, Amirmehdi; Rost, Marcel J.

    2016-02-01

    Vapour deposition on polycrystalline films can lead to extremely high levels of compressive stress, exceeding even the yield strength of the films. A significant part of this stress has a reversible nature: it disappears when the deposition is stopped and re-emerges on resumption. Although the debate on the underlying mechanism still continues, insertion of atoms into grain boundaries seems to be the most likely one. However, the required driving force has not been identified. To address the problem we analyse, here, the entire film system using thermodynamic arguments. We find that the observed, tremendous stress levels can be explained by the flux-induced entropic effects in the extremely dilute adatom gas on the surface. Our analysis justifies any adatom incorporation model, as it delivers the underlying thermodynamic driving force. Counterintuitively, we also show that the stress levels decrease, if the barrier(s) for adatoms to reach the grain boundaries are decreased.

  3. Novel solutions for thin film layer deposition for organic materials

    NASA Astrophysics Data System (ADS)

    Keiper, Dietmar; Long, Michael; Schwambera, Markus; Gersdorff, Markus; Kreis, Juergen; Heuken, Michael

    2011-03-01

    Innovative systems for carrier-gas enhanced vapor phase deposition of organic layers offer advanced methods for the precise deposition of complex thin-film layer stacks. The approach inherently avoids potential short-comings from solvent-based polymer deposition and offers new opportunities. The process operates at low pressure (thus avoiding complex vacuum setups), and, by employing AIXTRON's extensive experience in freely scalable solutions, can be adapted to virtually any production process and allows for R&D and production systems alike. Deposition of organic layers and stacks recommends the approach for a wide range of organic small molecule and polymer materials (including layers with gradual change of the composition), for conductive layers, for dielectric layers, for barrier systems, for OLED materials, and surface treatments such as oleophobic / hydrophobic coatings. With the combination of other vapor phase deposition solutions, hybrid systems combining organic and inorganic materials and other advanced stacks can be realized.

  4. Chemically Deposited Thin-Film Solar Cell Materials

    NASA Technical Reports Server (NTRS)

    Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

    2005-01-01

    We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

  5. Dual ion beam deposition of carbon films with diamondlike properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  6. In situ measurement of conductivity during nanocomposite film deposition

    NASA Astrophysics Data System (ADS)

    Blattmann, Christoph O.; Pratsinis, Sotiris E.

    2016-05-01

    Flexible and electrically conductive nanocomposite films are essential for small, portable and even implantable electronic devices. Typically, such film synthesis and conductivity measurement are carried out sequentially. As a result, optimization of filler loading and size/morphology characteristics with respect to film conductivity is rather tedious and costly. Here, freshly-made Ag nanoparticles (nanosilver) are made by scalable flame aerosol technology and directly deposited onto polymeric (polystyrene and poly(methyl methacrylate)) films during which the resistance of the resulting nanocomposite is measured in situ. The formation and gas-phase growth of such flame-made nanosilver, just before incorporation onto the polymer film, is measured by thermophoretic sampling and microscopy. Monitoring the nanocomposite resistance in situ reveals the onset of conductive network formation by the deposited nanosilver growth and sinternecking. The in situ measurement is much faster and more accurate than conventional ex situ four-point resistance measurements since an electrically percolating network is detected upon its formation by the in situ technique. Nevertheless, general resistance trends with respect to filler loading and host polymer composition are consistent for both in situ and ex situ measurements. The time lag for the onset of a conductive network (i.e., percolation) depends linearly on the glass transition temperature (Tg) of the host polymer. This is attributed to the increased nanoparticle-polymer interaction with decreasing Tg. Proper selection of the host polymer in combination with in situ resistance monitoring therefore enable the optimal preparation of conductive nanocomposite films.

  7. Synthesis of silicon nitride films by ion beam enhanced deposition

    NASA Astrophysics Data System (ADS)

    Xianghuai, Liu; Bin, Xue; Zhihong, Zheng; Zuyao, Zhou; Shichang, Zou

    1989-03-01

    Silicon nitride films with stoichiometric ratio of Si 3N 4 have been synthesized by concurrent electron beam evaporation of silicon and bombardment with nitrogen ions. The results show that the component ratio of nitrogen to silicon in IBED silicon nitride films can be controlled and predicted by the atomic arrival rate ratio of nitrogen to silicon. IR measurement shows that the characteristic absorption peak of IBED Si 3N 4 is located at a wavenumber of 840 cm -1. The refractive index ranges from 2.2 to 2.6. RBS, AES, TEM, SEM, ED and spreading resistance measurement were used for investigation of the depth profiles of composition and structure of silicon nitride films synthesized by IBED. An intermixed layer is formed at the interface by the knock on effect, and a silicon enriched layer is observed at the surface region of the film. Normally the films were found to be amorphous, but electron diffraction patterns taken from deposited layer showed a certain crystallinity. The silicon nitride films prepared by IBED have dramatically less oxygen content than that formed by non-ion-assisted deposition.

  8. Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl3 by Mesoplasma Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Wu, Sudong; Kambara, Makoto; Yoshida, Toyonobu

    Epitaxial Si thick films have been deposited by mesoplasma chemical vapor deposition with SiHCl3-H2-Ar gas mixtures at high efficiency. Addition of hydrogen has been revealed to increase the deposition efficiency by removing Cl as a form of HCl. It also promotes the surface migration of deposition precursors for the attainment of epitaxial Si films. As a result, epitaxial Si films with a production yield of about 60% and a deposition rate of 430 nm/s were deposited at a H2/TCS ratio of 2-3.

  9. X-ray reflectivity measurements of vacuum deposited thin films

    SciTech Connect

    Chason, M.; Chason, E.

    1992-12-31

    X-ray reflectivity using energy dispersive X-ray detection, a nondestructive probe of surface roughness over the region of {approximately} 1--50 {Angstrom}, has been used to investigate the characteristicsof vacuum deposited thin films. With a surface roughness sensitivity better than 1 {Angstrom} X-ray reflectivity is sensitive to interfaces between different materials for sample thicknesses up to approximately2000 {Angstrom} (depending on material density). We have investigated discrete Cr/Al deposits on quartz substrates and determined the surface roughness at the interfaces. We have also monitored the evolution ofthe Cr/Al interface following annealing. The experimental data is presented and discussed. The use of the technique for studying thin film deposits is addressed.

  10. X-ray reflectivity measurements of vacuum deposited thin films

    SciTech Connect

    Chason, M. ); Chason, E. )

    1992-01-01

    X-ray reflectivity using energy dispersive X-ray detection, a nondestructive probe of surface roughness over the region of [approximately] 1--50 [Angstrom], has been used to investigate the characteristicsof vacuum deposited thin films. With a surface roughness sensitivity better than 1 [Angstrom] X-ray reflectivity is sensitive to interfaces between different materials for sample thicknesses up to approximately2000 [Angstrom] (depending on material density). We have investigated discrete Cr/Al deposits on quartz substrates and determined the surface roughness at the interfaces. We have also monitored the evolution ofthe Cr/Al interface following annealing. The experimental data is presented and discussed. The use of the technique for studying thin film deposits is addressed.

  11. Deposition of device quality low H content, amorphous silicon films

    DOEpatents

    Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

    1995-03-14

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

  12. Thin Film Nanomorphology Tailored by Physical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Suzuki, Motofumi

    Shadowing growth by glancing angle deposition (GLAD) has been providing self-assembled nanostructures over much larger area for much lower costs since much earlier than the recent advanced top down processes do. In these two decades, significant progress has been made in the development of the well-controlled 3D nanomorphologies such as zigzag and helix. Much effort for theoretical and numerical understanding of the growth mechanism has been also paid in order to improve the morphology. Many researches in academia have been investigating useful properties of nanocolumnar thin films in their laboratory. On the other hand, most companies seem hesitate to introduce GLAD technique into the factory due to the prejudice that the obliquely deposited thin films are not durable and reproducible. In this article, we discuss the progress in glancing angle deposition technology for the practical applications.

  13. Deposition of device quality low H content, amorphous silicon films

    DOEpatents

    Mahan, Archie H.; Carapella, Jeffrey C.; Gallagher, Alan C.

    1995-01-01

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.

  14. Tin-Doped Inorganic Amorphous Films for Use as Transparent Monolithic Phosphors.

    PubMed

    Masai, Hirokazu; Miyata, Hiroki; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Kanemitsu, Yoshihiko

    2015-01-01

    Although inorganic crystalline phosphors can exhibit high quantum efficiency, their use in phosphor films has been limited by a reliance on organic binders that have poor durability when exposed to high-power and/or high excitation energy light sources. To address this problem, Sn(2+)-doped transparent phosphate films measuring several micrometers in thickness have been successfully prepared through heat treatment and a subsequent single dip-coating process. The resulting monolithic inorganic amorphous film exhibited an internal quantum efficiency of over 60% and can potentially utilize transmitted light. Analysis of the film's emissivity revealed that its color can be tuned by changing the amount of Mn and Sn added to influence the energy transfer from Sn(2+) to Mn(2+). It is therefore concluded that amorphous films containing such emission centers can provide a novel and viable alternative to conventional amorphous films containing crystalline phosphors in light-emitting devices.

  15. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    PubMed

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage. PMID:22097561

  16. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    PubMed

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  17. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    PubMed

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation. PMID:18449260

  18. Preparation and Characterization of Si3N4-TiN Nanocomposite via in situ Co-deposition in Liquid Ammonia

    NASA Astrophysics Data System (ADS)

    Yang, Mei; Lü, Ming-li; Zhu, Hong-min

    2007-12-01

    A new method of TiN/Si3N4 nanocomposite synthesis was described and tested. TiCl4 and SiCl4 used as the starting materials and sodium as the reduction agent were conducted in liquid ammonia respectively. TiCl4 and SiCl4 were reduced simultaneously and titanium nitride/silicon nitride nanocomposite powders were obtained by in situ co-deposition at temperatures around -45°C. X-ray diffraction patterns indicate that the product was amorphous and the by-product was sodium chloride. The product powders were heated up to 1600°C and crystallization to TiN and β-Si3N4 happened. Due to presence of TiN, the crystallization of silicon nitride in the mixture was later than that of pure silicon nitride. Transmission electron microscopy images show the average size of powders range from 10 nm to 40 nm and scanning electron microscopy images conformed that Ti and Si elements were dispersed uniformly. A green bulk nitride composite containing 20%TiN with the mean grain size of 100-300 nm and fracture toughness of 10.1+/-1.1 m1/2MPa, was obtained by spark plasma sintering at 1500-1600°C. The effect of TiN additive on microstructure and mechanical properties of composite bulk was discussed.

  19. Combinatorial thin film composition mapping using three dimensional deposition profiles

    NASA Astrophysics Data System (ADS)

    Suram, Santosh K.; Zhou, Lan; Becerra-Stasiewicz, Natalie; Kan, Kevin; Jones, Ryan J. R.; Kendrick, Brian M.; Gregoire, John M.

    2015-03-01

    Many next-generation technologies are limited by material performance, leading to increased interest in the discovery of advanced materials using combinatorial synthesis, characterization, and screening. Several combinatorial synthesis techniques, such as solution based methods, advanced manufacturing, and physical vapor deposition, are currently being employed for various applications. In particular, combinatorial magnetron sputtering is a versatile technique that provides synthesis of high-quality thin film composition libraries. Spatially addressing the composition of these thin films generally requires elemental quantification measurements using techniques such as energy-dispersive X-ray spectroscopy or X-ray fluorescence spectroscopy. Since these measurements are performed ex-situ and post-deposition, they are unable to provide real-time design of experiments, a capability that is required for rapid synthesis of a specific composition library. By using three quartz crystal monitors attached to a stage with translational and rotational degrees of freedom, we measure three-dimensional deposition profiles of deposition sources whose tilt with respect to the substrate is robotically controlled. We exhibit the utility of deposition profiles and tilt control to optimize the deposition geometry for specific combinatorial synthesis experiments.

  20. Tin-Doped Inorganic Amorphous Films for Use as Transparent Monolithic Phosphors

    NASA Astrophysics Data System (ADS)

    Masai, Hirokazu; Miyata, Hiroki; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Kanemitsu, Yoshihiko

    2015-06-01

    Although inorganic crystalline phosphors can exhibit high quantum efficiency, their use in phosphor films has been limited by a reliance on organic binders that have poor durability when exposed to high-power and/or high excitation energy light sources. To address this problem, Sn2+ -doped transparent phosphate films measuring several micrometers in thickness have been successfully prepared through heat treatment and a subsequent single dip-coating process. The resulting monolithic inorganic amorphous film exhibited an internal quantum efficiency of over 60% and can potentially utilize transmitted light. Analysis of the film’s emissivity revealed that its color can be tuned by changing the amount of Mn and Sn added to influence the energy transfer from Sn2+ to Mn2+. It is therefore concluded that amorphous films containing such emission centers can provide a novel and viable alternative to conventional amorphous films containing crystalline phosphors in light-emitting devices.