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Sample records for deposited tin films

  1. Fabrication of ion conductive tin oxide-phosphate amorphous thin films by atomic layer deposition

    SciTech Connect

    Park, Suk Won; Jang, Dong Young; Kim, Jun Woo; Shim, Joon Hyung

    2015-07-15

    This work reports the atomic layer deposition (ALD) of tin oxide-phosphate films using tetrakis(dimethylamino)tin and trimethyl phosphate as precursors. The growth rates were 1.23–1.84 Å/cycle depending upon the deposition temperature and precursor combination. The ionic conductivity of the ALD tin oxide-phosphate films was evaluated by cross-plane impedance measurements in the temperature range of 50–300 °C under atmospheric air, with the highest conductivity measured as 1.92 × 10{sup −5} S cm{sup −1} at 300 °C. Furthermore, high-resolution x-ray photoelectron spectroscopy exhibited two O1s peaks that were classified as two subpeaks of hydroxyl ions and oxygen ions, revealing that the quantity of hydroxyl ions in the ALD tin oxide-phosphate films influences their ionic conductivity.

  2. Characterization of tin (II) sulphide thin film synthesized by successive chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Mukherjee, A.; Mitra, P.

    2015-10-01

    In the present work, tin (II) sulphide ( SnS) thin films were grown on glass substrate by successive chemical solution deposition method using ammonium sulphide as anionic precursor solutions. Characterization techniques of X-ray diffraction, scanning electron microscopy, field emission scanning electron microscopy and energy-dispersive x-ray were utilized to study the microstructure of the films. Energy-dispersive x-ray confirmed formation of nearly stoichiometric film with slight excess of tin under optimized deposition conditions. Particle size estimated from Rietveld refinement of X-ray diffraction data using MAUD software was 41 nm which compared well with field emission scanning electron microscopy measurements. The value of the energy gap of 1.51 eV was found to be near the optimum needs for photovoltaic solar energy conversion (1.5 eV) with high absorption in the visible region. An enhancement in energy gap was observed for tin-enriched films.

  3. Effect of precursor concentration and bath temperature on the growth of chemical bath deposited tin sulphide thin films

    NASA Astrophysics Data System (ADS)

    Jayasree, Y.; Chalapathi, U.; Uday Bhaskar, P.; Sundara Raja, V.

    2012-01-01

    SnS is a promising candidate for a low-cost, non-toxic solar cell absorber layer. Tin sulphide thin films have been deposited by chemical bath deposition technique from a solution containing stannous chloride, thioacetamide, ammonia and triethanolamine (TEA). The effects of concentration of tin salt, triethanolamine and bath temperature on the growth of tin sulphide films have been investigated in order to optimize the growth conditions to obtain tin monosulphide (SnS) films. SnS films obtained under optimized conditions were found to be polycrystalline in nature with orthorhombic structure. The optical band gap of these films was found to be 1.5 eV.

  4. Transparent and Conductive Cadmium-Tin Oxide Films Deposited by Atom Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Nakazawa, Tatsuo; Ito, Kentaro

    1988-09-01

    Transparent and conductive cadmium-tin oxide films with resistivities of 9× 10-4 Ω cm and transmittance higher than 80% over the visible range were prepared by atom beam sputtering. The structure of the deposited film was amorphous and its composition was highly deficient in CdO compared with Cd2SnO4. This CTO film was used as the window layer of a heterojunction solar cell.

  5. Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering

    SciTech Connect

    Auger, M. A.; Vazquez, L.; Sanchez, O.; Cuerno, R.; Castro, M.; Jergel, M.

    2006-01-15

    We study surface kinetic roughening of TiN films grown on Si(100) substrates by dc reactive sputtering. The surface morphology of films deposited for different growth times under the same experimental conditions were analyzed by atomic force microscopy. The TiN films exhibit intrinsic anomalous scaling and multiscaling. The film kinetic roughening is characterized by a set of local exponent values {alpha}{sub loc}=1.0 and {beta}{sub loc}=0.39, and global exponent values {alpha}=1.7 and {beta}=0.67, with a coarsening exponent of 1/z=0.39. These properties are correlated to the local height-difference distribution function obeying power-law statistics. We associate this intrinsic anomalous scaling with the instability due to nonlocal shadowing effects that take place during thin-film growth by sputtering.

  6. Single-shot selective laser micromachining of filtered arc deposited TiN films from chromium underlayer

    NASA Astrophysics Data System (ADS)

    Dowling, Andrew J.; Ghantasala, Muralidhar K.; Evans, Peter E.; Hayes, Jason P.; Harvey, Erol C.; Doyle, E. Derry

    2002-11-01

    This paper presents the results on single-shot laser micromachining of filtered arc deposited TiN films and compares the machining characteristics of the films deposited under partially and fully filtered conditions. Machining performance was evaluated in terms of patterning quality and the ability to perform selective removal of top TiN film with minimal interference to an underlying layer. TiN was arc-deposited onto silicon substrate with a chromium layer on the top. These films were analysed for their composition and microstructure using Rutherford Backscattering Spectroscopy (RBS) and Scanning Electron Microscopy (SEM) before and after laser machining. Under single shot conditions the effect of fluence on the machined features has been investigated. The results showed selective removal of TiN films with a single shot from the underlying Cr layer. Further, this work clearly shows a distinction between the laser machining characteristics of the films deposited under different filtering conditions and substrate temperatures.

  7. Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

    SciTech Connect

    Lee, Byung Kook; Jung, Eunae; Kim, Seok Hwan; Moon, Dae Chul; Lee, Sun Sook; Park, Bo Keun; Hwang, Jin Ha; Chung, Taek-Mo; Kim, Chang Gyoun; An, Ki-Seok

    2012-10-15

    Thin film transistors (TFTs) with tin oxide films as the channel layer were fabricated by means of plasma enhanced atomic layer deposition (PE-ALD). The as-deposited tin oxide films show n-type conductivity and a nano-crystalline structure of SnO{sub 2}. Notwithstanding the relatively low deposition temperatures of 70, 100, and 130 °C, the bottom gate tin oxide TFTs show an on/off drain current ratio of 10{sup 6} while the device mobility values were increased from 2.31 cm{sup 2}/V s to 6.24 cm{sup 2}/V s upon increasing the deposition temperature of the tin oxide films.

  8. Nanocharacterization of TiN films obtained by Ion Vapor deposition

    NASA Astrophysics Data System (ADS)

    Lara, O. L.; Jerez, A. M.; Morantes, M. L.; Plata, A.; Torres, Y.; Lasprilla, M.; Zhabon, V.

    2011-01-01

    We evaluate and characterize the surface at the nanoscale level and take into account the temperature variation effect in the process of plasma ion deposition for H13 steel samples coated by Titanium Nitride (TiN). The interferometric microscopy and atomic force microscopy (AFM) were used to measure the film to analyze the variation of structural and morphological properties of nanofilms that depend on the temperature of sustrate.

  9. Photoassisted Chemically Deposited Tin Sulfide Thin Films Based on Two Different Chemical Formulations

    NASA Astrophysics Data System (ADS)

    Remadevi, T. L.; Dhanya, A. C.; Deepa, K.

    2014-11-01

    Photoassisted chemical deposition is a customized form of chemical bath deposition where the reaction is carried out in the presence of ultraviolet light. Deposition of tin sulfide films was carried out by this method using two different chemical baths. The as-prepared samples from the acetone bath were crystalline, exhibiting the orthorhombic structure of the Sn2S3 phase, but those from the glacial acetic acid bath were amorphous. The crystallinity of the films was improved on annealing. The deposition rate was found to depend on the pH of the bath and the chemical formulation. Distinct morphology was obtained for as-grown films. The films from the acetone bath were compact with uniform morphology of needle-shaped grains having equal diameters and lengths. The films from the glacial acetic acid bath were similar, with smaller needles. The high absorption coefficients of as-grown and annealed films show their potential application as absorber layers in photovoltaic devices. The refractive index was estimated from the reflectance of the films. The estimated activation energies of the as-prepared films from the acetone and glacial acetic acid baths were 0.4 eV and 0.46 eV, whereas those of the annealed samples were 0.2 eV and 0.44 eV, respectively. The activation energy was found to decrease for annealed films due to a decrease in trap sites.

  10. Cathodic cage plasma deposition of TiN and TiO{sub 2} thin films on silicon substrates

    SciTech Connect

    Sousa, Romulo R. M. de; Sato, Patricia S.; Nascente, Pedro A. P.; Viana, Bartolomeu C.; Alves, Clodomiro; Nishimoto, Akio

    2015-07-15

    Cathodic cage plasma deposition (CCPD) was used for growing titanium nitride (TiN) and titanium dioxide (TiO{sub 2}) thin films on silicon substrates. The main advantages of the CCPD technique are the uniformity, tridimensionality, and high rate of the film deposition that occurs at higher pressures, lower temperatures, and lower treatment times than those used in conventional nitriding treatments. In this work, the influence of the temperature and gas atmosphere upon the characteristics of the deposited films was investigated. The TiN and TiO{sub 2} thin films were characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy to analyze their chemical, structural, and morphological characteristics, and the combination of these results indicates that the low-cost CCPD technique can be used to produce even and highly crystalline TiN and TiO{sub 2} films.

  11. Ionization potentials of transparent conductive indium tin oxide films covered with a single layer of fluorine-doped tin oxide nanoparticles grown by spray pyrolysis deposition

    SciTech Connect

    Fukano, Tatsuo; Motohiro, Tomoyoshi; Ida, Takashi; Hashizume, Hiroo

    2005-04-15

    Indium tin oxide (ITO) films deposited with single layers of monodispersive fluorine-doped tin oxide (FTO) nanoparticles of several nanometers in size were grown on glass substrates by intermittent spray pyrolysis deposition using conventional atomizers. These films have significantly higher ionization potentials than the bare ITO and FTO films grown using the same technique. The ITO films covered with FTO particles of 7 nm in average size show an ionization potential of 5.01 eV, as compared with {approx}4.76 and {approx}4.64 eV in ITO and FTO films, respectively, which decreases as the FTO particle size increases. The ionization potentials are practically invariant against oxidation and reduction treatments, promising a wide application of the films to transparent conducting oxide electrodes in organic electroluminescent devices and light-emitting devices of high efficiencies.

  12. Ultra-low thermal conductivity of nanogranular indium tin oxide films deposited by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Brinzari, Vladimir I.; Cocemasov, Alexandr I.; Nika, Denis L.; Korotcenkov, Ghenadii S.

    2017-02-01

    The authors have shown that nanogranular indium tin oxide (ITO) films, deposited by spray pyrolysis on a silicon substrate, demonstrate ultralow thermal conductivity κ ˜ 0.84 ± 0.12 Wm-1 K-1 at room temperature. This value is approximately by one order of magnitude lower than that in bulk ITO. The strong drop of thermal conductivity is explained by the nanogranular structure and porosity of ITO films, resulting in enhanced phonon scattering on grain boundaries. The experimental results were interpreted theoretically, employing the Boltzmann transport equation approach for phonon transport and filtering model for electronic transport. The calculated values of thermal conductivity are in reasonable agreement with the experimental findings. The presented results show that ITO films with an optimal nanogranular structure may be prospective for thermoelectric applications.

  13. Indium Tin Oxide-Magnesium Fluoride Co-Deposited Films for Spacecraft Applications

    NASA Technical Reports Server (NTRS)

    Dever, Joycer A.; Rutledge, Sharon K.; Hambourger, Paul D.; Bruckner, Eric; Ferrante, Rhea; Pal, Anna Marie; Mayer, Karen; Pietromica, Anthony J.

    1998-01-01

    Highly transparent coatings with a maximum sheet resistivity between 10(exp 8) and 10(exp 9) ohms/square are desired to prevent charging of solar arrays for low Earth polar orbit and geosynchronous orbit missions. Indium tin oxide (ITO) and magnesium fluoride (MgF2) were ion beam sputter co-deposited onto fused silica substrates and were evaluated for transmittance, sheet resistivity and the effects of simulated space environments including atomic oxygen (AO) and vacuum ultraviolet (VUV) radiation. Optical properties and sheet resistivity as a function of MgF2 content in the films will be presented. Films containing 8.4 wt.% MgF2 were found to be highly transparent and provided sheet resistivity in the required range. These films maintained a high transmittance upon exposure to AO and to VUV radiation, although exposure to AO in the presence of charged species and intense electromagnetic radiation caused significant degradation in film transmittance. Sheet resistivity of the as-fabricated films increased with time in ambient conditions. Vacuum beat treatment following film deposition caused a reduction in sheet resistivity. However, following vacuum heat treatment, sheet resistivity values remained stable during storage in ambient conditions.

  14. Room temperature deposition of crystalline indium tin oxide films by cesium-assisted magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lee, Deuk Yeon; Baik, Hong-Koo

    2008-08-01

    Indium tin oxide (ITO) films were deposited on a Si (1 0 0) substrate at room temperature by cesium-assisted magnetron sputtering. Including plasma characteristics, the structural, electrical, and optical properties of deposited films were investigated as a function of cesium partial vapor pressure controlled by cesium reservoir temperature. We calculated the cesium coverage on the target surface showing maximum formation efficiency of negative ions by means of the theoretical model. Cesium addition promotes the formation efficiency of negative ions, which plays important role in enhancing the crystallinity of ITO films. In particular, the plasma density was linearly increased with cesium concentrations. The resultant decrease in specific resistivity and increase in transmittance (82% in the visible region) at optimum cesium concentration (4.24 × 10 -4 Ω cm at 80 °C of reservoir temperature) may be due to enhanced crystallinity of ITO films. Excess cesium incorporation into ITO films resulted in amorphization of its microstructure leading to degradation of ITO crystallinity. We discuss the cesium effects based on the growth mechanism of ITO films and the plasma density.

  15. Indium tin oxide films deposited by thermionic-enhanced DC magnetron sputtering on unheated polyethylene terephthalate polymer substrate

    SciTech Connect

    Lan, Y.F.; Peng, W.C.; Lo, Y.H.; He, J.L.

    2009-08-05

    Indium tin oxide thin films were deposited onto polyethylene terephthalate substrates via thermionic enhanced DC magnetron sputtering at low substrate temperatures. The structural, optical and electrical properties of these films are methodically investigated. The results show that compared with traditional sputtering, the films deposited with thermionic emission exhibit higher crystallinity, and their optical and electrical properties are also improved. Indium tin oxide films deposited by utilizing thermionic emission exhibit an average visible transmittance of 80% and an electrical resistivity of 4.5 x 10{sup -4} {Omega} cm, while films made without thermionic emission present an average visible transmittance of 74% and an electrical resistivity of 1.7 x 10{sup -3} {Omega} cm.

  16. Aqueous phase deposition of dense tin oxide films with nano-structured surfaces

    SciTech Connect

    Masuda, Yoshitake Ohji, Tatsuki; Kato, Kazumi

    2014-06-01

    Dense tin oxide films were successfully fabricated in an aqueous solution. The pH of the solutions was controlled to pH 1.3 by addition of HCl. Precise control of solution condition and crystal growth allowed us to obtain dense tin oxide films. Concave–convex surface of fluorine-doped tin oxide (FTO) substrates was entirely-covered with the continuous films. The films were about 65 nm in thickness and had nano-structured surfaces. Morphology of the films was strikingly different from our previous reported nano-sheet assembled structures. The films were not removed from the substrates by strong water flow or air blow to show strong adhesion strength. The aqueous solution process can be applied to surface coating of various materials such as nano/micro-structured surfaces, particles, fibers, polymers, metals or biomaterials. - Graphical abstract: Dense tin oxide films of 65 nm were successfully fabricated in an aqueous solution. They had nano-structured surfaces. Concave-convex substrates were entirely-covered with the continuous films. - Highlights: • Dense tin oxide films of 65 nm were successfully fabricated in an aqueous solution. • They had nano-structured surfaces. • Concave–convex substrates were entirely-covered with the continuous films.

  17. Structural and optical properties of tin (II) sulfide thin films deposited using organophosphorus precursor (Ph3PS)

    NASA Astrophysics Data System (ADS)

    Assili, Kawther; Alouani, Khaled; Vilanova, Xavier

    2017-02-01

    Tin sulfide (SnS) thin films have been deposited onto glass substrates using triphenylphosphine sulfide (Ph3PS) as a sulfur precursor in a chemical vapor deposition reactor in a temperature range of 250 °C-400 °C. The influence of the sulphidisation temperature in the crystal structure, surface morphology, chemical composition and optical properties has been investigated. X-ray diffraction, energy dispersive analysis of x-rays, and Raman spectroscopy showed that pure SnS thin films have been successfully obtained at 250 °C. All the deposited films were polycrystalline and showed orthorhombic structure, with a preferential orientation according to the direction <111>. The optical measurements showed that the films deposited exhibited a direct allowed transition and have a relatively high absorption coefficient. The presence of mixed tin sulfide phases granted by the variation of the sulphidisation temperature has affected the optical properties of the deposited films. The refractive index (n) and extinction coefficient (k), has low values compared to conventional semiconductor materials. The grown films can be considered as a good light absorbing material and a promising candidate for application in optoelectronic devices.

  18. Electrical and Structural Properties of Tin-Doped Indium Oxide Films Deposited by DC Sputtering at Room Temperature

    NASA Astrophysics Data System (ADS)

    Song, Pung; Shigesato, Yuzo; Kamei, Masayuki; Yasui, Itaru

    1999-05-01

    Tin-doped indium oxide (ITO) films were deposited on soda-lime glass plates without substrate heating by dc magnetron sputtering. Crystallinity and electrical properties of the films were investigated by X-ray diffraction and Hall-effect measurements, which showed clear dependence on target substrate distance (T S) and on total gas pressure (Ptot) during deposition. Degradation in crystallinity was observed at relatively high or low Ptot, where the upper or lower Ptot level for depositing films with high crystallinity was increased with decreasing T S. Based on a hard sphere collision model, the crystallinity of the films was considered to be strongly affected both by the kinetic energy of sputtered In (or Sn) particles and by the bombardment of high energy particles arriving at the growing film surface. The former could enhance the crystallinity, whereas the latter degraded both the crystallinity and conductivity. Such degradation in electrical properties was mainly due to a decrease in carrier density.

  19. Effect of heat treatment on the NO2-sensing properties of sputter-deposited indium tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Vijayalakshmi, K.; Pillay, Vasanthi V.

    2011-10-01

    Transparent conducting indium tin oxide (ITO) films were deposited onto glass substrates by radio-frequency magnetron sputtering at 648 K, under an oxygen partial pressure of 1 Pa. The effect of annealing on the electrical properties of the films was studied. Characterization of the coatings revealed an electrical resistivity below 6.5 × 10- 3 Ω cm. The ITO films deposited at 648 K were amorphous, while the crystallinity improved after annealing at 700 K. The surface morphology examined by scanning electron microscopy appears to be uniform over the entire surface area after annealing. The NO2-sensing properties of the ITO films were investigated and showed sensitivity at concentrations lower than 50 ppm, at a working temperature of 600 K.

  20. Effect of oxygen content on piezoresistivity of indium tin oxide thin films prepared by pulsed laser deposition

    SciTech Connect

    Fang, H.; Miller, T.; Rogers, B.R.; Magruder, R.H. III; Weller, R.A.

    2005-04-15

    The piezoresistivity of thin films of indium tin oxide prepared by pulsed laser deposition has been measured as a function of the O-to-(In+Sn) atom ratio. The oxygen-to-metal atom ratio was determined through Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy analyses. Gauge factors, defined as the fractional change of the film resistance to the applied strain, increase with the film's oxygen content. The deposition under 50 mTorr oxygen pressure resulted in the film with the largest oxygen-to-metal atom ratio, 1.92, and a gauge factor of -14.5. A model based on hopping conduction is proposed. Results from this model are consistent with the sign and magnitude of the observed gauge factors.

  1. Control of Phase, Structural and Optical Properties of Tin Sulfide Nanostructured Thin Films Grown via Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    Mahdi, Mohamed S.; Ibrahim, K.; Hmood, Arshad; Ahmed, Naser M.; Mustafa, Falah I.

    2017-02-01

    In this study, nanostructured tin sulfide (SnS) thin films were synthesized on glass substrates by means of low-cost chemical bath deposition using non-toxic trisodium citrate (TSC) as complexing agent. The influence of varying molar concentration of TSC (0.15-0.21 M) on the tin sulfide phases was investigated. The structural, morphological and optical properties of the films were studied using x-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption spectroscopy. The XRD patterns confirmed an orthorhombic polycrystalline structure of the as-prepared SnS thin films. The values of average crystalline size and texture coefficient of the major XRD peak increased with increasing TSC concentration. The FESEM micrographs revealed that the synthesized thin films are characterized by a flake-stack structure. The Raman spectra of the films showed the presence of a Sn2S3 peak, which gradually declined in intensity until almost disappearing as the TSC concentration increased from 0.15 M to 0.21 M. The direct energy band gaps estimated from ultraviolet-visible-near-infrared absorption spectra also varied between 1.64 eV to 1.1 eV with increasing TSC concentration from 0.15 M to 0.21 M. The results indicate the crucial role of TSC in the synthesis of SnS nanostructured thin films.

  2. Growth mechanism and optical properties of Ti thin films deposited onto fluorine-doped tin oxide glass substrate

    SciTech Connect

    Einollahzadeh-Samadi, Motahareh; Dariani, Reza S.

    2015-03-15

    In this work, a detailed study of the influence of the thickness on the morphological and optical properties of titanium (Ti) thin films deposited onto rough fluorine-doped tin oxide glass by d.c. magnetron sputtering is carried out. The films were characterized by several methods for composition, crystallinity, morphology, and optical properties. Regardless of the deposition time, all the studied Ti films of 400, 1500, 2000, and 2500 nm in thickness were single crystalline in the α-Ti phase and also very similar to each other with respect to composition. Using the atomic force microscopy (AFM) technique, the authors analyzed the roughness evolution of the Ti films characteristics as a function of the film thickness. By applying the dynamic scaling theory to the AFM images, a steady growth roughness exponent α = 0.72 ± 0.02 and a dynamic growth roughness exponent β = 0.22 ± 0.02 were determined. The value of α and β are consistent with nonlinear growth model incorporating random deposition with surface diffusion. Finally, measuring the reflection spectra of the samples by a spectrophotometer in the spectral range of 300–1100 nm allowed us to investigate the optical properties. The authors observed the increments of the reflection of Ti films with thickness, which by employing the effective medium approximation theory showed an increase in thickness followed by an increase in the volume fraction of metal.

  3. The Effects of Two Thick Film Deposition Methods on Tin Dioxide Gas Sensor Performance

    PubMed Central

    Bakrania, Smitesh D.; Wooldridge, Margaret S.

    2009-01-01

    This work demonstrates the variability in performance between SnO2 thick film gas sensors prepared using two types of film deposition methods. SnO2 powders were deposited on sensor platforms with and without the use of binders. Three commonly utilized binder recipes were investigated, and a new binder-less deposition procedure was developed and characterized. The binder recipes yielded sensors with poor film uniformity and poor structural integrity, compared to the binder-less deposition method. Sensor performance at a fixed operating temperature of 330 °C for the different film deposition methods was evaluated by exposure to 500 ppm of the target gas carbon monoxide. A consequence of the poor film structure, large variability and poor signal properties were observed with the sensors fabricated using binders. Specifically, the sensors created using the binder recipes yielded sensor responses that varied widely (e.g., S = 5 – 20), often with hysteresis in the sensor signal. Repeatable and high quality performance was observed for the sensors prepared using the binder-less dispersion-drop method with good sensor response upon exposure to 500 ppm CO (S = 4.0) at an operating temperature of 330 °C, low standard deviation to the sensor response (±0.35) and no signal hysteresis. PMID:22399977

  4. Laser scribing of indium tin oxide (ITO) thin films deposited on various substrates for touch panels

    NASA Astrophysics Data System (ADS)

    Tseng, Shih-Feng; Hsiao, Wen-Tse; Huang, Kuo-Cheng; Chiang, Donyau; Chen, Ming-Fei; Chou, Chang-Pin

    2010-12-01

    In this study, a Nd:YAG laser with wavelength of 1064 nm is used to scribe the indium tin oxide (ITO) thin films coated on three types of substrate materials, i.e. soda-lime glass, polycarbonate (PC), and cyclic-olefin-copolymer (COC) materials with thickness of 20 nm, 30 nm, and 20 nm, respectively. The effect of exposure time adjusted from 10 μs to 100 μs on the ablated mark width, depth, and electrical properties of the scribed film was investigated. The maximum laser power of 2.2 W was used to scribe these thin films. In addition, the surface morphology, surface reaction, surface roughness, optical properties, and electrical conductivity properties were measured by a scanning electron microscope, a three-dimensional confocal laser scanning microscope, an atomic force microscope, and a four-point probe. The measured results of surface morphology show that the residual ITO layer was produced on the scribed path with the laser exposure time at 10 μs and 20 μs. The better edge qualities of the scribed lines can be obtained when the exposure time extends from 30 μs to 60 μs. When the laser exposure time is longer than 60 μs, the partially burned areas of the scribed thin films on PC and COC substrates are observed. Moreover, the isolated line width and resistivity values increase when the laser exposure time increases.

  5. Effect of variation of tin concentration on the properties of Cu2ZnSnS4 thin films deposited using chemical spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Rajeshmon, V. G.; Kuriakose, Abin; Kartha, C. Sudha; Vijayakumar, K. P.

    2013-02-01

    Cu2ZnSnS4 (CZTS) thin films were prepared using chemical spray pyrolysis technique on soda lime glass (SLG) substrates. The effect of tin concentration on the structural, optical and electrical properties was investigated. We deposited films by varying tin concentration from 0.007 M to 0.013 M in steps of 0.0015 M keeping the concentration of copper, zinc and sulphur at 0.02 M, 0.01 M and 0.12 M respectively. It was found that crystallinity of the film increased up to the tin concentration of 0.01 M and then decreases. Band gap of the films steadily decreased from 1.48 to 1.26 eV with increase in tin concentration. All the samples were observed to be p-type by hot probe method. Resistivity of the films increased with increase in tin concentration. In this work we tuned the optoelectronic properties by varying the tin concentration alone and optimized the concentration of tin which yields samples ideal for photovoltaic applications.

  6. Investigation of thermal and hot-wire chemical vapor deposition copper thin films on TiN substrates using CupraSelect as precursor.

    PubMed

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    Copper films were deposited on oxidized Si substrates covered with TiN using a novel chemical vapor deposition reactor in which reactions were assisted by a heated tungsten filament (hot-wire CVD, HWCVD). Liquid at room temperature hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) was directly injected into the reactor with the aid of a direct-liquid injection (DLI) system using N2 as carrier gas. The deposition rates of HWCVD Cu films obtained on TiN covered substrates were found to increase with filament temperature (65 and 170 degrees C were tested). The resistivities of HWCVD Cu films were found to be higher than for thermally grown films due to the possible presence of impurities into the Cu films from the incomplete dissociation of the precursor and W impurities caused by the presence of the filament. For HWCVD films grown at a filament temperature of 170 degrees C, smaller grains are formed than at 65 degrees C as shown from the taken SEM micrographs. XRD diffractograms taken on Cu films deposited on TiN could not reveal the presence of W compounds originating from the filament because the relative peak was masked by the TiN [112] peak.

  7. Nd:YVO4 laser direct ablation of indium tin oxide films deposited on glass and polyethylene terephthalate substrates.

    PubMed

    Wang, Jian-Xun; Kwon, Sang Jik; Han, Jae-Hee; Cho, Eou Sik

    2013-09-01

    A Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser was applied to obtain the indium tin oxide (ITO) patterns on flexible polyethylene terephthalate (PET) substrate by a direct etching method. After the ITO films were deposited on a soda-lime glass and PET substrate, laser ablations were carried out on the ITO films for various conditions and the laser ablated results on the ITO films were investigated and analyzed considering the effects of substrates on the laser etching. The laser ablated widths on ITO deposited on glass were found to be much narrower than those on ITO deposited on PET substrate, especially, at a higher scanning speed of laser beam such as 1000 mm/s and 2000 mm/s. As the thermal conductivity of glass substrate is about 7.5 times higher than that of PET, more thermal energy would be spread and transferred to lateral direction in the ITO film in case of PET substrate.

  8. Surface hardening of VT-22 alloy by inductively coupled plasma nitriding and magnetron deposition of TiN films

    NASA Astrophysics Data System (ADS)

    Kharkov, Maxim M.; Kaziev, Andrey V.; Tumarkin, Alexander V.; Drobinin, Vyacheslav E.; Stepanova, Tatiana V.; Pisarev, Alexander A.

    2017-01-01

    The surface of VT-22 Russian grade titanium alloy samples was modified by inductively coupled plasma (ICP) nitriding followed by magnetron deposition of TiN coatings. Different operating conditions of ICP nitriding and magnetron deposition were considered. The microhardness depth profiles were measured for samples after nitriding. The performance of TiN coatings was examined with a scratch tester.

  9. Fabrication and properties of plasmonic crystalline thin film of titanium nitride (TiN) by pulsed laser deposition with Nd:YAG laser at 355 nm

    NASA Astrophysics Data System (ADS)

    Oshikane, Yasushi

    2016-09-01

    For efficient plasmonic MIM structures in fabrication of optical nano-probe tip for scanning near-field microscope (SNOM), an experimental study of thin film fabrication of titanium nitride (TiN) has been started by pulsed laser deposition (PLD) with 3rd harmonic (355nm) pulses of high-power Nd:YAG laser. Inside a TMP-pumped UHV chamber, a TiN powder sintered body has been irradiated with the UV laser pulses (3.3 nsFWHM, 10Hz, up to 340mJ/ pulse on target) at different intensities and incident angles. The deposited films on glass slide or silicon wafer has been analyzed by X-ray diffractometer (XRD), UV-Vis spectrophotometer, scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS). Previously-reported PLD fabrication experiments for TiN film used a titanium (Ti) target with several gas species including nitrogen. The laser-produced Ti plasma with an appropriate condition had a chemical reaction with nitrogen molecules, and the resultant TiN film was deposited on a substrate. While on the other hand, this study has significant features of (1) PLD target made of crystalline powder sintered body and (2) UV laser pulses having temporally-smoothed gaussian profile by injection-seeding of IR laser diode beam. The very first trial depositions have succeeded to fabricate flat and dense films of a few hundred nm, which were partly covered with debris and cracks. The resultant XRD pattern of film having luster of gold indicated several peaks including 42.6° (200) and 61.8° (220) which correspond to crystal structure of TiN. The electron configuration in the PLDed TiN film is studied using XPS.

  10. Surface modification of cadmium sulfide thin film honey comb nanostructures: Effect of in situ tin doping using chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Wilson, K. C.; Basheer Ahamed, M.

    2016-01-01

    Even though nanostructures possess large surface to volume ratio compared to their thin film counterpart, the complicated procedure that demands for the deposition on a substrate kept them back foot in device fabrication techniques. In this work, a honey comb like cadmium sulfide (CdS) thin films nanostructure are deposited on glass substrates using simple chemical bath deposition technique at 65 °C. Energy band gaps, film thickness and shell size of the honey comb nanostructures are successfully controlled using tin (Sn) doping and number of shells per unit area is found to be maximum for 5% Sn doped (in the reaction mixture) sample. X-ray diffraction and optical absorption analysis showed that cadmium sulfide and cadmium hydroxide coexist in the samples. TEM measurements showed that CdS nanostructures are embedded in cadmium hydroxide just like "plum pudding". Persistent photoconductivity measurements of the samples are also carried out. The decay constants found to be increased with increases in Sn doping.

  11. Oxygen-Plasma-Treated Indium-Tin-Oxide Films on Nonalkali Glass Deposited by Super Density Arc Plasma Ion Plating

    NASA Astrophysics Data System (ADS)

    Kim, Soo Young; Hong, Kihyon; Son, Jun Ho; Jung, Gwan Ho; Lee, Jong-Lam; Choi, Kyu Han; Song, Kyu Ho; Ahn, Kyung Chul

    2008-02-01

    The effects of O2 plasma treatment on both the chemical composition and work function of an indium-tin-oxide (ITO) film were investigated. ITO films were deposited on non-alkali glass substrate by super density arc plasma ion plating for application in active-matrix organic light-emitting diodes (OLEDs). The water contact angle decreased from 38 to 11° as the ITO films were treated with O2 plasma for 60 s at a plasma power of 150 W, indicating an increase in the hydrophilicity of the surface. It was found that there were no distinct changes in the microstructure or electrical properties of the ITO films with O2 plasma treatment. Synchrotron radiation photoemission spectroscopy data revealed that O2 plasma treatment decreased the amount of carbon contamination and increased the number of unscreened states of In3+ and (O2)2- peroxo species. This played the role of increasing the work function of the ITO films by 1.7 eV. As a result, the turn-on voltage of the OLED decreased markedly from 24 to 8 V and the maximum luminance value of the OLED increased to 2500 cd/m2.

  12. The effect of laser patterning parameters on fluorine-doped tin oxide films deposited on glass substrates

    NASA Astrophysics Data System (ADS)

    Tseng, Shih-Feng; Hsiao, Wen-Tse; Huang, Kuo-Cheng; Chiang, Donyau

    2011-08-01

    The purpose of this study is to pattern the fluorine-doped tin oxide thin film deposited on the soda-lime glass substrates for touch screen applications by ultraviolet laser. The patterned film structures provide the electrical isolation and prevent the electrical contact from each region for various touch screens. The surface morphology, edge quality, three-dimensional topography, and profile of isolated lines and electrode structures after laser patterning were measured by a confocal laser scanning microscope. Moreover, a four-point probe instrument was used to measure the sheet resistance before and after laser patterning on film surfaces and also to discuss the electrical property at different laser spot overlaps. After laser patterning, a high overlapping area of laser spot was used to pattern the electrode layer on film surfaces that could obtain an excellent machined quality of edge profile. All sheet resistance values of film surfaces near the isolated line edge were larger than the original ones. Moreover, the sheet resistance values increased with increasing laser spot overlapping area.

  13. The effects of deposition conditions and annealing temperature on the performance of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Bradley, Tanina; Iyer, Shanthi; Alston, Robert; Collis, Ward; Lewis, Jay; Cunningham, Garry; Forsythe, Eric

    2013-03-01

    In this work the performance of bottom gate thin film transistors (TFTs) with transparent amorphous gallium tin zinc oxide (GSZO) active layers fabricated by radio frequency sputter deposition using a single GSZO target on SiO2/Si wafers will be presented. Trap density and its energetic distribution, and oxygen chemisorption were found to play a critical role in determining the operational characteristics of the device, all of which can be controlled by the oxygen incorporation and substrate temperature during deposition, along with the post-deposition annealing. In addition device instability, with respect to the electrical stress and optical illumination, can be suppressed by suitably tailoring these parameters. TFTs exhibiting a drain current (ID) of 10-6 A and on/off current ratio (Ion/off ) of 106 was achieved. A stable TFT has been achieved under electrical stress for 2% oxygen flow exhibiting ΔVT as low as ~0.5 V for 3hr stress under a gate bias of 1.2 and 12 V, with good optical stability.

  14. Synthesis, Deposition, and Microstructure Development of Thin Films Formed by Sulfidation and Selenization of Copper Zinc Tin Sulfide Nanocrystals

    NASA Astrophysics Data System (ADS)

    Chernomordik, Boris David

    Significant reduction in greenhouse gas emission and pollution associated with the global power demand can be accomplished by supplying tens-of-terawatts of power with solar cell technologies. No one solar cell material currently on the market is poised to meet this challenge due to issues such as manufacturing cost, material shortage, or material toxicity. For this reason, there is increasing interest in efficient light-absorbing materials that are comprised of abundant and non-toxic elements for thin film solar cell. Among these materials are copper zinc tin sulfide (Cu2ZnSnS4, or CZTS), copper zinc tin selenide (Cu2ZnSnSe4, or CZTSe), and copper zinc tin sulfoselenide alloys [Cu2ZnSn(SxSe1-x )4, or CZTSSe]. Laboratory power conversion efficiencies of CZTSSe-based solar cells have risen to almost 13% in less than three decades of research. Meeting the terawatt challenge will also require low cost fabrication. CZTSSe thin films from annealed colloidal nanocrystal coatings is an example of solution-based methods that can reduce manufacturing costs through advantages such as high throughput, high material utilization, and low capital expenses. The film microstructure and grain size affects the solar cell performance. To realize low cost commercial production and high efficiencies of CZTSSe-based solar cells, it is necessary to understand the fundamental factors that affect crystal growth and microstructure evolution during CZTSSe annealing. Cu2ZnSnS4 (CZTS) nanocrystals were synthesized via thermolysis of single-source cation and sulfur precursors copper, zinc and tin diethyldithiocarbamates. The average nanocrystal size could be tuned between 2 nm and 40 nm, by varying the synthesis temperature between 150 °C and 340 °C. The synthesis is rapid and is completed in less than 10 minutes. Characterization by X-ray diffraction, Raman spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy confirm that the nanocrystals are nominally

  15. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    NASA Astrophysics Data System (ADS)

    Jia, Junjun; Torigoshi, Yoshifumi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

    2015-01-01

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O2, H2O, and N2O as the reactive gases. Experimental results show that the electrical properties of the N2O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N2O introduction into the deposition process, where the field mobility reach to 30.8 cm2 V-1 s-1, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  16. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-12

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  17. A comparison of ZnO films deposited on indium tin oxide and soda lime glass under identical conditions

    SciTech Connect

    Deka, Angshuman; Nanda, Karuna Kar

    2013-06-15

    ZnO films have been grown via a vapour phase transport (VPT) on soda lime glass (SLG) and indium-tin oxide (ITO) coated glass. ZnO film on ITO had traces of Zn and C which gives them a dark appearance while that appears yellowish-white on SLG. X-ray photoelectron spectroscopy studies confirm the traces of C in the form of C-O. The photoluminescence studies reveal a prominent green luminescence band for ZnO film on ITO.

  18. Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

    PubMed

    Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

    2016-02-01

    Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

  19. Effect of solvent volume on the physical properties of undoped and fluorine doped tin oxide films deposited using a low-cost spray technique

    NASA Astrophysics Data System (ADS)

    Muruganantham, G.; Ravichandran, K.; Saravanakumar, K.; Ravichandran, A. T.; Sakthivel, B.

    2011-12-01

    Undoped and fluorine doped tin oxide films were deposited from starting solutions having different values of solvent volume (10-50 ml) by employing a low cost and simplified spray technique using perfume atomizer. X-ray diffraction studies showed that there was a change in the preferential orientation from (2 1 1) plane to (1 1 0) plane as the volume of the solvent was increased. The sheet resistance ( Rsh) of undoped SnO 2 film was found to be minimum (13.58 KΩ/□) when the solvent volume was lesser (10 ml) and there was a sharp increase in Rsh for higher values of solvent volume. Interestingly, it was observed that while the Rsh increases sharply with the increase in solvent volume for undoped SnO 2 films, it decreases gradually in the case of fluorine doped SnO 2 films. The quantitative analysis of EDAX confirmed that the electrical resistivity of the sprayed tin oxide film was mainly governed by the number of oxygen vacancies and the interstitial incorporation of Sn atoms which in turn was governed by the impinging flux on the hot substrate. The films were found to have good optical characteristics suitable for opto-electronic devices.

  20. Electrochromic characteristics of niobium-doped titanium oxide film on indium tin oxide/glass by liquid phase deposition

    NASA Astrophysics Data System (ADS)

    Lee, Ming-Kwei; Lee, Chia-Jung

    2015-10-01

    Ammonium hexafluorotitanate and boric acid aqueous solutions were used as precursors for the growth of titanium oxide films on indium tin oxide (ITO)/glass substrate. For as-grown titanium oxide film used in an electrochromic device, Li+ ions from electrolyte will be trapped to hydroxyl groups and degrade the electrochromic durability during the cyclic voltammogram characterization. For niobium doped titanium oxide film, lower growth rate from more HF incorporation from the niobium doped solution and rougher surface morphology from the formation of nanocrystals were obtained. However, niobium doping reduces hydroxyl groups and the electrochromic durability is enhanced from 5 × 103 to 1 × 104 times. The transmittance is enhanced from 37 to 51% at the wavelength of 550 nm.

  1. Structural and optical properties of Tin sulphide thin films

    SciTech Connect

    Akkari, A.; Ben Nasr, T.; Kamoun, N.

    2007-09-19

    Tin sulphide SnS thin films were deposited on glass substrates using the chemical bath deposition technique (CBD). By investigating the influence of triethanolamine (TEA) concentration on the properties of deposited films, we obtained the optimum deposition parameter. These films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM) analysis and spectrophotometric measurements. The obtained thin films exhibit the orthorhombic structure and the direct band gap energy is found to be about 1.65 eV, for films prepared at TEA concentration films equal to 13.5 M.

  2. X-ray Photoelectron Spectroscopy Study of Indium Tin Oxide Films Deposited at Various Oxygen Partial Pressures

    NASA Astrophysics Data System (ADS)

    Peng, Shou; Cao, Xin; Pan, Jingong; Wang, Xinwei; Tan, Xuehai; Delahoy, Alan E.; Chin, Ken K.

    2017-02-01

    Here, a systematic experimental study on indium tin oxide (ITO) films is presented to investigate the effects of oxygen partial pressure on the film's electrical properties. The results of Hall measurements show that adding more oxygen in the sputtering gas has negative influences on the electrical conductivity of ITO films. As O2/(O2 + Ar)% in the sputtering gas is increased from 0 to 6.98%, the resistivity of ITO film rises almost exponentially from 7.9 × 10-4 to 4.1 × 10-2 Ω cm, with the carrier density decreasing from 4.8 × 1020 to 5.4 × 1018 cm-3. The origins of these negative effects are discussed with focuses on the concentration of ionized impurities and the scattering of grain barriers. Extensive x-ray photoelectron spectroscopy (XPS) analyses were employed to gain insight into the concentration of ionized impurities, demonstrating a strong correlation between the oxygen vacancy concentration and the carrier density in ITO films as a function of sputtering O2 partial pressure. Other microstructural characterization techniques including x-ray diffraction (XRD), high-magnification scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) analyses were used to evaluate the average grain size of ITO films. For ITO films that have carrier density above 1019 cm-3, scattering on grain boundaries and other crystallographic defects show negligible effects on the carrier transport. The results point to the oxygen vacancy concentration that dictates the carrier density and, thus, the resistivity of magnetron-sputtered ITO films.

  3. Patterning of Indium Tin Oxide Films

    NASA Technical Reports Server (NTRS)

    Immer, Christopher

    2008-01-01

    A relatively rapid, economical process has been devised for patterning a thin film of indium tin oxide (ITO) that has been deposited on a polyester film. ITO is a transparent, electrically conductive substance made from a mixture of indium oxide and tin oxide that is commonly used in touch panels, liquid-crystal and plasma display devices, gas sensors, and solar photovoltaic panels. In a typical application, the ITO film must be patterned to form electrodes, current collectors, and the like. Heretofore it has been common practice to pattern an ITO film by means of either a laser ablation process or a photolithography/etching process. The laser ablation process includes the use of expensive equipment to precisely position and focus a laser. The photolithography/etching process is time-consuming. The present process is a variant of the direct toner process an inexpensive but often highly effective process for patterning conductors for printed circuits. Relative to a conventional photolithography/ etching process, this process is simpler, takes less time, and is less expensive. This process involves equipment that costs less than $500 (at 2005 prices) and enables patterning of an ITO film in a process time of less than about a half hour.

  4. Characteristics of Fluorine-doped tin oxide thin films grown by Streaming process for Electrodeless Electrochemical Deposition

    NASA Astrophysics Data System (ADS)

    Yusuf, Gbadebo; Khalilzadeh-Rezaie, Farnood; Cleary, Justin W.; Oladeji, Isaiah O.; Suu, Koukou; Schoenfeld, Winston V.; Peale, Robert E.; Awodugba, Ayodeji O.

    2015-04-01

    This work investigated the characteristics of SnO2: F films grown by Streaming Process for Electrodeless Electrochemical Deposition (SPEED). Stannic chloride (SnCl4) and ammonium fluoride (NH4 F) was dissolved in a mixture of deionized water and organic solvents. The preheated substrate temperature was varied between 450 and 530° C. High quality SnO2: F films were grown at all the substrate temperatures studied. The typical film thickness was 250 nm. XRD shows that the grown films are polycrystalline SnO2 with a tetragonal crystal structure. The average optical transmission of the films was around 93% throughout the wavelength of 400 to 1000 nm. The lowest electrical resistivity achieved was 6 x 10-4 Ω cm. The Hall measurements showed that the film is an n-type semiconductor, with the highest carrier mobility of 8.3 cm2/V.s, and concentration of 1 x 1021 cm-3. The direct band gap was determined to be 4 eV from the transmittance spectrum.

  5. Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

    SciTech Connect

    Warner, Ellis J.; Gladfelter, Wayne L.; Johnson, Forrest; Campbell, Stephen A.

    2015-03-15

    Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. % Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.

  6. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect

    Nie, Man Mete, Tayfun; Ellmer, Klaus

    2014-04-21

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w ∼ d{sub f}{sup β}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent β is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ξ increases with film thickness also with a power law according to ξ ∼ d{sub f}{sup z} with exponents z = 0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2 + 1 dimensions is discussed for the ITO growth in this work.

  7. Lithium intercalation in sputter deposited antimony-doped tin oxide thin films: Evidence from electrochemical and optical measurements

    SciTech Connect

    Montero, J. Granqvist, C. G.; Niklasson, G. A.; Guillén, C.; Herrero, J.

    2014-04-21

    Transparent conducting oxides are used as transparent electrical contacts in a variety of applications, including in electrochromic smart windows. In the present work, we performed a study of transparent conducting antimony-doped tin oxide (ATO) thin films by chronopotentiometry in a Li{sup +}-containing electrolyte. The open circuit potential vs. Li was used to investigate ATO band lineups, such as those of the Fermi level and the ionization potential, as well as the dependence of these lineups on the preparation conditions for ATO. Evidence was found for Li{sup +} intercalation when a current pulse was set in a way so as to drive ions from the electrolyte into the ATO lattice. Galvanostatic intermittent titration was then applied to determine the lithium diffusion coefficient within the ATO lattice. The electrochemical density of states of the conducting oxide was studied by means of the transient voltage recorded during the chronopotentiometry experiments. These measurements were possible because, as Li{sup +} intercalation took place, charge compensating electrons filled the lowest part of the conduction band in ATO. Furthermore, the charge insertion modified the optical properties of ATO according to the Drude model.

  8. Ovonic type switching in tin selenide thin films

    NASA Technical Reports Server (NTRS)

    Baxter, C. R.; Mclennan, W. D.

    1975-01-01

    Amorphous tin selenide thin films which possess Ovonic type switching properties are fabricated using vacuum deposition techniques. The devices are fabricated in a planar configuration and consist of amorphous tin selenide deposited over silver contacts. Results obtained indicate that Ovonic type memory switching does occur in these films with the energy density required for switching from a high impedance to a low impedance state being dependent on the spacing between the electrodes of the device. There is also a strong implication that the switching is a function of the magnitude of the applied voltage pulse.

  9. Electrical and mechanical characterization of chemical vapor deposition of tungsten on sputter-deposited TiN layers

    NASA Astrophysics Data System (ADS)

    Zhang, S.-L.; Palmans, R.; Petersson, C. S.; Maex, K.

    1995-12-01

    Tungsten (W) films are deposited from tungsten hexafluoride on sputter-deposited TiN adhesion layers in a cold-wall chemical vapor deposition reactor. The film resistivity of the W films is found to be thickness dependent. It decreases monotonically with increasing film thickness. Typical resistivity values of 40-nm-thick W films are about 19.3-23.4 μΩ cm, depending on the structure of the underlying TiN layer used. The resistivity of a 980-nm-thick W film is 9.8 μΩ cm. Oxygen and fluorine impurities, as well as structural difference in the W films are found to be the major causes for the resistivity variations. Lowering impurity level and/or increasing W crystallite size can decrease film resistivity. The stress of all the W films is found to be tensile, independent of the structure of the TiN layers. However, the absolute value of the stress is intimately associated with the structure of the TiN layers. The stress values can differ by a factor of more than 2 for the 40-nm-thick W films deposited on the different underlying TiN layers. The amplitude of stress also monotonically decreases with increasing film thickness. Consequently, the difference in stress induced by the difference in the underlying TiN layers gradually disappears as the film thickness increases. A strong correlation between the stress and the film texture is found.

  10. Reactive Sputter Deposition of WO3/Ag/WO3 Film for Indium Tin Oxide (ITO)-Free Electrochromic Devices.

    PubMed

    Yin, Yi; Lan, Changyong; Guo, Huayang; Li, Chun

    2016-02-17

    Functioning both as electrochromic (EC) and transparent-conductive (TC) coatings, WO3/Ag/WO3 (WAW) trilayer film shows promising potential application for ITO-free electrochromic devices. Reports on thermal-evaporated WAW films revealed that these bifunctional WAW films have distinct EC characteristics; however, their poor adhesive property leads to rapid degradation of coloring-bleaching cycling. Here, we show that WAW film with improved EC durability can be prepared by reactive sputtering using metal targets. We find that, by introducing an ultrathin tungsten (W) sacrificial layer before the deposition of external WO3, the oxidation of silver, which leads to film insulation and apparent optical haze, can be effectively avoided. We also find that the luminous transmittance and sheet resistance were sensitive to the thicknesses of tungsten and silver layers. The optimized structure for TC coating was obtained to be WO3 (45 nm)/Ag (10 nm)/W (2 nm)/WO3 (45 nm) with a sheet resistance of 16.3 Ω/□ and a luminous transmittance of 73.7%. Such film exhibits compelling EC performance with decent luminous transmittance modulation ΔTlum of 29.5%, fast switching time (6.6 s for coloring and 15.9 s for bleaching time), and long-term cycling stability (2000 cycles) with an applied potential of ±1.2 V. Thicker external WO3 layer (45/10/2/100 nm) leads to larger modulation with maximum ΔTlum of 46.4%, but at the cost of significantly increasing the sheet resistance. The strategy of introducing ultrathin metal sacrificial layer to avoid silver oxidation could be extended to fabricating other oxide-Ag-oxide transparent electrodes via low-cost reactive sputtering.

  11. X-ray photoelectron spectroscopy study on the chemistry involved in tin oxide film growth during chemical vapor deposition processes

    SciTech Connect

    Mannie, Gilbere J. A.; Gerritsen, Gijsbert; Abbenhuis, Hendrikus C. L.; Deelen, Joop van; Niemantsverdriet, J. W.; Thuene, Peter C.

    2013-01-15

    The chemistry of atmospheric pressure chemical vapor deposition (APCVD) processes is believed to be complex, and detailed reports on reaction mechanisms are scarce. Here, the authors investigated the reaction mechanism of monobutyl tinchloride (MBTC) and water during SnO{sub 2} thin film growth using x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). XPS results indicate an acid-base hydrolysis reaction mechanism, which is tested with multilayer experiments, demonstrating self-terminating growth. In-house developed TEM wafers are used to visualize nucleation during these multilayer experiments, and results are compared with TEM results of APCVD samples. Results show almost identical nucleation behavior implying that their growth mechanism is identical. Our experiments suggest that in APCVD, when using MBTC and water, SnO{sub 2} film growth occurs via a heterolytic bond splitting of the Sn-Cl bonds without the need to invoke gas-phase radical or coordination chemistry of the MBTC precursor.

  12. Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition.

    PubMed

    Aldalbahi, Ali; Mkawi, E M; Ibrahim, K; Farrukh, M A

    2016-09-07

    We report growth of quaternary Cu2 ZnSnS4 (CZTS) thin films prepared by the electrochemical deposition from salt precursors containing Cu (II), Zn (II) and Sn (IV) metals. The influence of different sulfurization times t (t = 75, 90, 105, and 120 min) on the structural, compositional, morphological, and optical properties, as well as on the electrical properties is studied. The films sulfurized 2 hours showed a prominent kesterite phase with a nearly stoichiometric composition. Samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and Raman and UV-VIS-NIR spectrometer at different stages of work. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. (FESEM) shows that compact and dense morphology and enhanced photo-sensitivity. STEM - EDS elemental map of CZTS cross-section confirms homogeneous distribution. From optical study, energy gap was enlarged with a changed sulfurization times in the range of 1.37-1.47 eV.

  13. Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition

    NASA Astrophysics Data System (ADS)

    Aldalbahi, Ali; Mkawi, E. M.; Ibrahim, K.; Farrukh, M. A.

    2016-09-01

    We report growth of quaternary Cu2 ZnSnS4 (CZTS) thin films prepared by the electrochemical deposition from salt precursors containing Cu (II), Zn (II) and Sn (IV) metals. The influence of different sulfurization times t (t = 75, 90, 105, and 120 min) on the structural, compositional, morphological, and optical properties, as well as on the electrical properties is studied. The films sulfurized 2 hours showed a prominent kesterite phase with a nearly stoichiometric composition. Samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and Raman and UV-VIS-NIR spectrometer at different stages of work. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. (FESEM) shows that compact and dense morphology and enhanced photo-sensitivity. STEM - EDS elemental map of CZTS cross-section confirms homogeneous distribution. From optical study, energy gap was enlarged with a changed sulfurization times in the range of 1.37–1.47 eV.

  14. Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition

    PubMed Central

    Aldalbahi, Ali; Mkawi, E. M.; Ibrahim, K.; Farrukh, M. A.

    2016-01-01

    We report growth of quaternary Cu2 ZnSnS4 (CZTS) thin films prepared by the electrochemical deposition from salt precursors containing Cu (II), Zn (II) and Sn (IV) metals. The influence of different sulfurization times t (t = 75, 90, 105, and 120 min) on the structural, compositional, morphological, and optical properties, as well as on the electrical properties is studied. The films sulfurized 2 hours showed a prominent kesterite phase with a nearly stoichiometric composition. Samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and Raman and UV-VIS-NIR spectrometer at different stages of work. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. (FESEM) shows that compact and dense morphology and enhanced photo-sensitivity. STEM - EDS elemental map of CZTS cross-section confirms homogeneous distribution. From optical study, energy gap was enlarged with a changed sulfurization times in the range of 1.37–1.47 eV. PMID:27600023

  15. Synthesis of tin-containing polyimide films

    NASA Technical Reports Server (NTRS)

    Ezzell, S. A.; Taylor, L. T.

    1984-01-01

    A series of tin-containing polyimide films derived from either 3,3',4,4'-benzophenone tetracarboxylic acid dianhydride or pyromellitic dianhydride and 4,4'-oxydianiline have been synthesized and their electrical properties examined. Highest quality materials (i.e., homogeneous, smooth surface, flexible) with the best electrical properties were doped with either SnCl2.2H2O or (n-Bu)2SnCl2. In all cases, extensive reactivity of the tin dopant with water, air or polyamic acid during imidization is observed. Lowered electrical surface resistivities appear to be correlatable with the presence of surface tin oxide on the film surface.

  16. Structural and physical properties of tin oxide thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Lin, Su-Shia; Tsai, Yung-Shiang; Bai, Kai-Ren

    2016-09-01

    Tin oxide films were deposited on glass substrates by RF magnetron sputtering. At a lower sputtering pressure, the tin oxide film comprised nanocrystalline orthorhombic SnO with a (110) orientation, greater p-type conductivity and better hydrophobicity. Increasing substrate temperature resulted in the coexistence of nanocrystalline orthorhombic SnO and tetragonal SnO2 in the deposited film, favoring hydrophilicity, changing the p-type conductivity to n-type conductivity, and reducing resistivity. As the sputtering pressure or substrate temperature increased, the tin oxide film exhibited a lower surface roughness, a larger optical energy gap, and higher optical transmission.

  17. Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition.

    PubMed

    Bitter, Sofie; Schlupp, Peter; Bonholzer, Michael; von Wenckstern, Holger; Grundmann, Marius

    2016-04-11

    Continuous composition spread (CCS) methods allow fast and economic exploration of composition dependent properties of multielement compounds. Here, a CCS method was applied for room temperature pulsed laser deposition (PLD) of amorphous zinc-tin-oxide to gain detailed insight into the influence of the zinc-to-tin cation ratio on optical and electrical properties of this ternary compound. Our CCS approach for a large-area offset PLD process utilizes a segmented target and thus makes target exchange or movable masks in the PLD chamber obsolete. Cation concentrations of 0.08-0.82 Zn/(Zn + Sn) were achieved across single 50 × 50 mm(2) glass substrates. The electrical conductivity increases for increasing tin content, and the absorption edge shifts to lower energies. The free carrier concentration can be tuned from 10(20) to 10(16) cm(-3) by variation of the cation ratio from 0.1 to 0.5 Zn/(Zn + Sn).

  18. Low-Temperature Growth of Transparent and Conducting Tin Oxide Film by Photo-Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Tabuchi, Toshiya; Yamagishi, Koji; Tarui, Yasuo

    1987-03-01

    For the first time, photo-CVD of transparent and conducting SnO2 films has been achieved under irradiation by a low-pressure Hg lamp. It was confirmed that both resonance lines (254 nm, 185 nm) are effective for the activation of CVD-sources (O2, SnCl4, SbCl5). The structural, electrical and optical properties of undoped and Sb-doped SnO2 films prepared by the photo-CVD method were evaluated. Resistivity as low as 5.48× 10-3 ohm\\cdotcm with high optical transmission (80%) was obtained in Sb-doped SnO2 films (80 nm in thickness).

  19. Placer tin deposits in central Alaska

    USGS Publications Warehouse

    Chapman, Robert Mills; Coats, Robert Roy; Payne, Thomas G.

    1963-01-01

    Placer tin, in the form of cassiterite (Sn02) and (or) tinstone (fragments including cassiterite and some vein or rock material), is known or reported in deposits that have been prospected or mined for placer gold in four areas adjacent to the Yukon River in central Alaska, 120 to 240 miles west of Fairbanks. These areas are: the Morelock Creek area, on the north side of the Yukon River about 30 miles upstream from Tanana; the Moran Dome area, about 16 miles north of the Yukon River and 25 miles northwest of Tanana; the Mason Creek area, on the north side of the Yukon River about 36 miles west of Tanana; and the Ruby-Long area, on the south side of the Yukon River near Ruby and about 40 miles east of Galena. The only extensive placer mining in these areas has been in the Ruby-Long area. Other placer deposits including some cassiterite are known in central Alaska but are not discussed in this report. Bedrock in these areas is predominantly schist of various types with some associated greenstone and other metamorphic rocks. Some granite is exposed in the Moran Dome and Ruby-Long areas and in areas close to Morelock and Mason Creeks. Barren, milky quartz veins and veinlets transecting the metamorphic rocks are common. No cassiterite was found in the bedrock, and no bedrock source of the tin has been reported. In the Moran Dome and Mason Creek areas, and in part of the Ruby-Long area, tourmaline is present in the rocks of the tin-bearing drainage basins, and apparently absent elsewhere in these areas. The placer deposits are in both valley floor and bench alluvium, which are predominantly relatively thin, rarely exceeding a thickness of 30 feet. Most of the alluvium deposits are not perennially frozen. In the Morelock Creek area tin-bearing deposits are 5 to 5? miles above the mouth of the creek, and meager evidence indicates that cassiterite and gold are present in Morelock Creek valley and some of the tributaries both upstream and downstream from these deposits. The

  20. Variable temperature semiconductor film deposition

    DOEpatents

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  1. Variable temperature semiconductor film deposition

    DOEpatents

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  2. Heteroepitaxial growth of TiN film on MgO (100) by reactive magnetron sputtering.

    PubMed

    Chen, Wei-Chun; Peng, Chun-Yen; Chang, Li

    2014-01-01

    TiN thin films were deposited on MgO (100) substrates at different substrate temperatures using rf sputtering with Ar/N2 ratio of about 10. At 700°C, the growth rate of TiN was approximately 0.05 μm/h. The structural and electrical properties of TiN thin films were characterized with x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall measurements. For all deposition conditions, XRD results show that the TiN films can be in an epitaxy with MgO with cube-on-cube orientation relationship of (001)TiN // (001)MgO and [100]TiN // [100]MgO. TEM with selected-area electron diffraction pattern verifies the epitaxial growth of the TiN films on MgO. SEM and AFM show that the surface of the TiN film is very smooth with roughness approximately 0.26 nm. The minimum resistivity of the films can be as low as 45 μΩ cm.

  3. Investigation of electroless tin deposition from acidic thiourea-type bath

    NASA Astrophysics Data System (ADS)

    Araźna, A.; Bieliński, J.

    2006-10-01

    The constant tendency of miniaturization in electronic products and developments in surface assembly techniques creates requirement to prepare new techniques and processes also in the range of metallic coatings. An additional factor which influences the evolution of preservatives coatings technology is the necessity to adapt Polish law to European directive. From 1 st July 2006 there will be an obligatory RoHS directive banning applying lead in electronics. Electroless tin deposition is one of an alternative for Sn/Pb lead free preservative films on copper surface in PCB technology. Electroless deposition of tin coatings on copper can be made in two ways: from an alkaline bath - the process disproportionation of Sn(II) compounds and from acidic bath contain complex compound such as thiourea - the displacement of copper by tin in Sn(II). Alkaline baths are not used in printed circuit board technology because it has destructive influence on resists. Besides acidic baths complex compounds contain additional stability solution composition which modify structure of obtained tin film. Quality and thickness tin layer are fundamental parameters which determine its protective character. The research test were done in thiourea-type electroless tin bath. The influence of different parameters on n rate of tin deposition and thickness of Sn coating were determined: temperature of the bath, Sn(II)-salt, thiourea and HCl concentration. Tin layers were depositioned on electrolytical copper foil. The thickness of Sn coating was determined by coulometry in 2M HCl. The rate deposition process depends mainly on the thiourea and HCl concentrations in solution. The temperature is also a very important parameter. The thickness of tin layer grows when the temperature increase. Although above 70°C appear undesirable thiourea decomposition. The results of the investigation show that further investigations are necessary for this solution.

  4. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    NASA Astrophysics Data System (ADS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn3O4, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20-30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 - 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9-10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  5. Spray deposited copper zinc tin sulphide (Cu2ZnSnS4) film as a counter electrode in dye sensitized solar cells.

    PubMed

    Swami, Sanjay Kumar; Chaturvedi, Neha; Kumar, Anuj; Chander, Nikhil; Dutta, Viresh; Kumar, D Kishore; Ivaturi, A; Senthilarasu, S; Upadhyaya, Hari M

    2014-11-21

    Stoichiometric thin films of Cu2ZnSnS4 (CZTS) were deposited by the spray technique on a FTO coated glass substrate, with post-annealing in a H2S environment to improve the film properties. CZTS films were used as a counter electrode (CE) in Dye-Sensitized Solar Cells (DSCs) with N719 dye and an iodine electrolyte. The DSC of 0.25 cm(2) area using a CE of CZTS film annealed in a H2S environment under AM 1.5G illumination (100 mW cm(-2)) exhibited a short circuit current density (JSC) = 18.63 mA cm(-2), an open circuit voltage (VOC) = 0.65 V and a fill factor (FF) = 0.53, resulting in an overall power conversion efficiency (PCE) = 6.4%. While the DSC using as deposited CZTS film as a CE showed the PCE = 3.7% with JSC = 13.38 mA cm(-2), VOC = 0.57 V and FF = 0.48. Thus, the spray deposited CZTS films can play an important role as a CE in the large area DSC fabrication.

  6. Tin Oxide Films On Glass Substrates By A SOL-GEL Technique

    NASA Astrophysics Data System (ADS)

    Puyane, R.; Kato, I.

    1983-11-01

    The novel sol-gel technique has been implemented to deposit electroconductive tin oxide films to be used as transparent electrodes, mainly for display applications. Thin films of antimony-doped tin oxide were deposited on several types of glass substrates (soda-lime-silica, borosilicate and fused silica) using a dip-coating procedure. Alcoholic solutions of tin and antimony organometallic compounds were prepared under controlled conditions. The dipcoating procedure is described° in detail as well as subsequent thermal treatments under controlled atmosphere and temperatures up to 630 C. The optical and electrical characteristics of the films were studied as a function of the process parameters, firing conditions and number of coatings. After the subsequent thermal treatments, 2film resistances of about 200 ohms square could be measured corresponding to resistivities of about 10 ohm cm. The films optical transmission was above 80 percent.

  7. A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System

    SciTech Connect

    Steinmann, Vera; Chakraborty, Rupak; Rekemeyer, Paul H.; Hartman, Katy; Brandt, Riley E.; Polizzotti, Alex; Yang, Chuanxi; Moriarty, Tom; Gradečak, Silvija; Gordon, Roy G.; Buonassisi, Tonio

    2016-08-31

    As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to reproducibly test promising candidates for high-performing PV devices. Many early-stage devices are prone to device shunting due to pinholes in the absorber layer, producing 'false-negative' results. Here, we demonstrate a device engineering solution toward a robust device architecture, using a two-step absorber deposition approach. We use tin sulfide (SnS) as a test absorber material. The SnS bulk is processed at high temperature (400 degrees C) to stimulate grain growth, followed by a much thinner, low-temperature (200 degrees C) absorber deposition. At a lower process temperature, the thin absorber overlayer contains significantly smaller, densely packed grains, which are likely to provide a continuous coating and fill pinholes in the underlying absorber bulk. We compare this two-step approach to the more standard approach of using a semi-insulating buffer layer directly on top of the annealed absorber bulk, and we demonstrate a more than 3.5x superior shunt resistance Rsh with smaller standard error ..sigma..Rsh. Electron-beam-induced current (EBIC) measurements indicate a lower density of pinholes in the SnS absorber bulk when using the two-step absorber deposition approach. We correlate those findings to improvements in the device performance and device performance reproducibility.

  8. Amorphous tin-cadmium oxide films and the production thereof

    SciTech Connect

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  9. Strain and Cohesive Energy of TiN Deposit on Al(001) Surface: Density Functional Calculation

    NASA Astrophysics Data System (ADS)

    Ren, Yuan; Liu, Xuejie

    2016-07-01

    To apply the high hardness of TiN film to soft and hard multilayer composite sheets, we constructed a new type of composite structural material with ultra-high strength. The strain of crystal and cohesive energy between the atoms in the eight structures of N atom, Ti atom, 2N2Ti island and TiN rock salt deposited on the Al(001) surface were calculated with the first-principle ultra-soft pseudopotential approach of the plane wave based on the density functional theory. The calculations of the cohesive energy showed that N atoms could be deposited in the face-centered-cubic vacancy position of the Al(001) surface and results in a cubic structure AlN surface. The TiN film could be deposited on the interface of β-AlN. The calculations of the strains showed that the strain in the TiN film deposited on the Al(001) surface was less than that in the 2N2Ti island deposited on the Al(001) surface. The diffusion behavior of interface atom N was investigated by a nudged elastic band method. Diffusion energy calculation showed that the N atom hardly diffused to the substrate Al layer.

  10. Tin induced a-Si crystallization in thin films of Si-Sn alloys

    SciTech Connect

    Neimash, V. E-mail: oleks.goushcha@nuportsoft.com; Poroshin, V.; Goushcha, A. O. E-mail: oleks.goushcha@nuportsoft.com; Shepeliavyi, P.; Yukhymchuk, V.; Melnyk, V.; Kuzmich, A.; Makara, V.

    2013-12-07

    Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4 nm in size) in the amorphous matrix of Si{sub 1−x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1−x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ∼80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.

  11. Spin current transport in ceramic: TiN thin film

    NASA Astrophysics Data System (ADS)

    An, Hongyu; Kanno, Yusuke; Tashiro, Takaharu; Nakamura, Yoshio; Shi, Ji; Ando, Kazuya

    2016-03-01

    The spin current transport property in a ceramic material TiN has been investigated at room temperature. By attaching TiN thin films on Ni20Fe80 with different thicknesses of TiN, the spin pumping experiment has been conducted, and the spin diffusion length in TiN was measured to be around 43 nm. Spin-torque ferromagnetic resonance has also been taken to investigate the spin Hall angle of TiN, which was estimated to be around 0.0052. This study on ceramic material provides a potential selection in emerging materials for spintronics application.

  12. Excimer laser micromachining of TiN films from chromium and copper sacrificial layers

    NASA Astrophysics Data System (ADS)

    Dowling, A. J.; Ghantasala, M. K.; Hayes, J. P.; Harvey, E. C.; Doyle, E. D.

    2002-10-01

    This paper presents results on the laser micromachining of TiN films. Machining performance was evaluated in terms of patterning quality and the ability to remove TiN with minimal interference with an underlying sacrificial layer. TiN was arc-deposited onto (100) silicon substrate with chromium (Cr) and copper (Cu) sacrificial layers. Films were also deposited onto bare silicon substrates under the same conditions. These films were analysed for their composition and structure using Rutherford backscattering spectroscopy and x-ray diffraction techniques. Laser micromachining was performed using a KrF excimer laser at 248 nm. The effect of fluence and number of shots on the machined features has been investigated in detail. The patterned features were examined using optical, confocal and scanning electron microscopes. The characteristics observed were analysed and compared in all three sets of samples. The results showed selective removal of TiN films from Cr and Cu sacrificial layers under different conditions. The machining of TiN from (100) silicon showed relatively poor definition of patterned features. The analysis of these results indicated that laser machining of TiN from Cr and Cu layers is best explained using the explosion mechanism of removal.

  13. Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing

    SciTech Connect

    Li, Liuan; Kishi, Akinori; Shiraishi, Takayuki; Jiang, Ying; Wang, Qingpeng; Ao, Jin-Ping

    2014-03-15

    This study evaluates the thermal stability of different refractory metal nitrides used as Schottky electrodes on GaN. The results demonstrate that TiN, MoSiN, and MoN possess good rectification and adhesion strength, with barrier heights of 0.56, 0.54, and 0.36 eV, respectively. After thermal treatment at 850 °C for 1 min, the TiN and MoN electrodes still exhibit rectifying characteristics, while the MoSiN degrades to an ohmic-like contact. For further study, several TiN films are deposited using different N{sub 2}/Ar reactive/inert sputtering gas ratios, thereby varying the nitrogen content present in the sputtering gas. Ohmic-like contact is observed with the pure Ti contact film, and Schottky characteristics are observed with the samples possessing nitrogen in the film. The average Schottky barrier height is about 0.5 eV and remains virtually constant with varying nitrogen deposition content. After examining Raman spectra and x-ray photoelectron spectroscopy results, the increase in the film resistivity after thermal treatment is attributed to oxidation and/or nitridation. Films deposited with a medium (40% and 60%) nitrogen content show the best film quality and thermal stability.

  14. Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone

    SciTech Connect

    Kannan Selvaraj, Sathees; Feinerman, Alan; Takoudis, Christos G.

    2014-01-15

    In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1 ± 0.01 nm/cycle within the wide ALD temperature window of 175–300 °C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure, refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}–Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3 Ω cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.

  15. The Surface Resistance of Superconducting A15 Niobium-Tin Films at 8.6 GHZ

    NASA Astrophysics Data System (ADS)

    Allen, Laura Henrietta

    A calorimetric technique for measuring the temperature dependence of the surface resistance of high-T(,c) superconducting thin films at 8.6 GHz has been developed. The technique has been applied to study electron-beam, co-deposited films of the A15 phase of Niobium-Tin with the goal of optimizing the microwave losses of the material. In addition, films of sputtered Niobium-Tin, a Niobium-Zirconium alloy, and Niobium-Nitride were also studied. For the evaporated Niobium-Tin films, carefully controlled deposition temperatures of greater than 900 C are necessary to obtain the lowest losses. A sharp transition is observed for stoichiometric material (25 percent Tin), but for the understoichiometric compositions the transitions are wider, yielding excessive losses in the material. Films prepared by magnetron sputtering behave similarly. A procedure, phase-locking, for preparing the stoichiometric composition which does not require exact control of the deposition rates has been developed and successfully demonstrated with the evaporated films. The experimental data are compared with two theoretical predictions: one for the superconducting state based on the BCS theory and a normal-state calculation in the classical skin-depth limit. When the residual losses (10 micro-ohms) are subtracted from the data, the behavior predicted for the superconducting state is observed. The normal-state losses, however, are anomalously large for the Niobium -Tin films. Possible explanations of this result are discussed. Reduced gaps are also obtained for the samples from their low temperature surface resistance. Values obtained for the Niobium-Tin films are lower than those from other measurements and may be due to poor material near the substrate interface. Even at the present level of material development, the prognosis for the application of Niobium-Tin films to microwave devices appears favorable. When compared with Niobium, the most common material choice, Niobium -Tin films as

  16. Plasma-enhanced atomic layer deposition for plasmonic TiN

    NASA Astrophysics Data System (ADS)

    Otto, Lauren M.; Hammack, Aaron T.; Aloni, Shaul; Ogletree, D. Frank; Olynick, Deirdre L.; Dhuey, Scott; Stadler, Bethanie J. H.; Schwartzberg, Adam M.

    2016-09-01

    This work presents the low temperature plasma-enhanced atomic layer deposition (PE-ALD) of TiN, a promising plasmonic synthetic metal. The plasmonics community has immediate needs for alternatives to traditional plasmonic materials (e.g. Ag and Au), which lack chemical, thermal, and mechanical stability. Plasmonic alloys and synthetic metals have significantly improved stability, but their growth can require high-temperatures (>400 °C), and it is difficult to control the thickness and directionality of the resulting film, especially on technologically important substrates. Such issues prevent the application of alternative plasmonic materials for both fundamental studies and large-scale industrial applications. Alternatively, PE-ALD allows for conformal deposition on a variety of substrates with consistent material properties. This conformal coating will allow the creation of exotic three-dimensional structures, and low-temperature deposition techniques will provide unrestricted usage across a variety of platforms. The characterization of this new plasmonic material was performed with in-situ spectroscopic ellipsometry as well as Auger electron spectroscopy for analysis of TiN film sensitivity to oxide cross-contamination. Plasmonic TiN films were fabricated, and a chlorine plasma etch was found to pattern two dimensional gratings as a test structure. Optical measurements of 900 nm period gratings showed reasonable agreement with theoretical modeling of the fabricated structures, indicating that ellipsometry models of the TiN were indeed accurate.

  17. Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films

    NASA Astrophysics Data System (ADS)

    Cordova, Isvar A.; Peng, Qing; Ferrall, Isa L.; Rieth, Adam J.; Hoertz, Paul G.; Glass, Jeffrey T.

    2015-04-01

    TiO2 is an exemplary semiconductor anode material for photoelectrochemical (PEC) water-splitting electrodes due to its functionality, long-term stability in corrosive environments, nontoxicity, and low cost. In this study, TiO2 photoanodes with enhanced photocurrent density were synthesized by atomic layer deposition (ALD) of TiO2 onto a porous, transparent, and conductive fluorine-doped tin oxide nanoparticle (nanoFTO) scaffold fabricated by solution processing. The simplicity and disordered nature of the nanoFTO nanostructure combined with the ultrathin conformal ALD TiO2 coatings offers advantages including decoupling charge carrier diffusion length from optical penetration depth, increased photon absorption probability through scattering, complimentary photon absorption, and favorable interfaces for charge separation and transfer across the various junctions. We examine the effects of porosity of the nanoFTO scaffold and thickness of the TiO2 coating on PEC performance and achieve an optimal photocurrent of 0.7 mA cm-2 at 0 V vs. Ag/AgCl under 100 mW cm-2 AM 1.5 G irradiation in a 1 M KOH aqueous electrolyte. Furthermore, the fundamental mechanisms behind the improvements are characterized via cyclic voltammetry, incident photon-to-current efficiency, transient photocurrent spectroscopy, and electrochemical impedance spectroscopy and are contrasted with those of single crystal rutile TiO2 nanowires. The strategies employed in this work highlight the opportunities inherent to these types of heteronanostructures, where the lessons may be applied to improve the PEC conversion efficiencies of other promising semiconductors, such as hematite (α-Fe2O3) and other materials more sensitive to visible light.TiO2 is an exemplary semiconductor anode material for photoelectrochemical (PEC) water-splitting electrodes due to its functionality, long-term stability in corrosive environments, nontoxicity, and low cost. In this study, TiO2 photoanodes with enhanced photocurrent

  18. Biomimetic thin film deposition

    NASA Astrophysics Data System (ADS)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  19. Pulsed laser deposition of hydroxyapatite film on laser gas nitriding NiTi substrate

    NASA Astrophysics Data System (ADS)

    Yang, S.; Xing, W.; Man, H. C.

    2009-09-01

    A hydroxyapatite (HA) film was deposited on laser gas nitriding (LGN) NiTi alloy substrate using pulsed laser deposition technique. TiN dendrite prepared by LGN provided a higher number of nucleation sites for HA film deposition, which resulted in that a lot number of HA particles were deposited on TiN dendrites. Moreover, the rough LGN surface could make the interface adhesive strength between HA film and substrate increase as compared with that on bare NiTi substrate.

  20. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    SciTech Connect

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  1. Energy bandgap variation in oblique angle-deposited indium tin oxide

    SciTech Connect

    Kim, Kyurin; Kim, Hyunsoo; Cho, Jaehee; Park, Jun Hyuk; Kim, Jong Kyu; Fred Schubert, E.

    2016-01-25

    Indium tin oxide (ITO) thin films deposited using the oblique angle deposition (OAD) technique exhibit a strong correlation between structural and optical properties, especially the optical bandgap energy. The microstructural properties of ITO thin films are strongly influenced by the tilt angle used during the OAD process. When changing the tilt angle, the refractive index, porosity, and optical bandgap energy of ITO films also change due to the existence of a preferential growth direction at the interface between ITO and the substrate. Experiments reveal that the ITO film's optical bandgap varies from 3.98 eV (at normal incident deposition) to 3.87 eV (at a 60° tilt angle)

  2. Aspects of nitrogen surface chemistry relevant to TiN chemical vapor deposition

    SciTech Connect

    Schulberg, M.T.; Allendorf, M.D.; Outka, D.A.

    1996-08-01

    NH{sub 3} is an important component of many chemical vapor deposition (CVD) processes for TiN films, which are used for diffusion barriers and other applications in microelectronic circuits. In this study, the interaction of NH{sub 3} with TiN surfaces is examined with temperature programmed desorption (TPD) and Auger electron spectroscopy. NH{sub 3} has two adsorption states on TiN: a chemisorbed state and a multilayer state. A new method for analyzing TPD spectra in systems with slow pumping speeds yields activation energies for desorption for the two states of 24 kcal/mol and 7.3 kcal/mol, respectively. The sticking probability into the chemisorption state is {approximately}0.06. These results are discussed in the context of TiN CVD. In addition, the high temperature stability of TiN is investigated. TiN decomposes to its elements only after heating to 1300 K, showing that decomposition is unlikely to occur under CVD conditions.

  3. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    SciTech Connect

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  4. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method.

    PubMed

    Nagirnyak, Svitlana V; Lutz, Victoriya A; Dontsova, Tatiana A; Astrelin, Igor M

    2016-12-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated.

  5. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method

    NASA Astrophysics Data System (ADS)

    Nagirnyak, Svitlana V.; Lutz, Victoriya A.; Dontsova, Tatiana A.; Astrelin, Igor M.

    2016-07-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated.

  6. Underpotential deposition of tin(II) on a gold disc electrode and determination of tin in a tin plate sample.

    PubMed

    Qiao, Zhiqing; Shang, Wei; Zhang, Xin; Wang, Chunming

    2005-04-01

    This work describes a study of the underpotential deposition (UPD) of Sn2+ on a polycrystalline gold disc electrode using cyclic voltammetry (CV) and chronocoulometry (CC). Sn2+ ions showed well-defined peaks from UPD and UPD stripping (UPD-S) in 1 mol/L HCl solutions, while bulk deposition (BD) and BD stripping (BD-S) of the ions were also observed. The measured UPD shifts, DeltaE(UPD), between the UPD-S and the BD-S peaks were more than 200 mV. The UPD charge and the surface coverage of tin were measured by CC. A new method for determining Sn2+ was therefore developed, based on the excellent electrochemical properties of the Au/Sn UPD system. A plot of the UPD-DPASV (differential pulse anodic stripping voltammetry) signal versus the Sn(II) concentration was obtained for [Sn(II)] of 1.98x10(-7) to 3.64x10(-5) M. The method developed here has been applied to determine the tin in a tin plate sample.

  7. Optical properties of TiN thin films close to the superconductor-insulator transition.

    SciTech Connect

    Pfuner, F.; Degiorgi, L.; Baturina, T. I.; Vinokur, V. M.; Baklanov, M. R.; Materials Science Division; ETH Zurich; Inst. Semiconductor Physics; IMEC Kapeldreef

    2009-11-10

    We present the intrinsic optical properties over a broad spectral range of TiN thin films deposited on an Si/SiO{sub 2} substrate. We analyze the measured reflectivity spectra of the film-substrate multilayer structure within a well-establish procedure based on the Fresnel equation and extract the real part of the optical conductivity of TiN. We identify the metallic contribution as well as the finite energy excitations and disentangle the spectral weight distribution among them. The absorption spectrum of TiN bears some similarities with the electrodynamic response observed in the normal state of the high-temperature superconductors. Particularly, a mid-infrared feature in the optical conductivity is quite reminiscent of a pseudogap-like excitation.

  8. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films.

    PubMed

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-05

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  9. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    SciTech Connect

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W.

    2006-11-01

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are

  10. Fabrication and characterization of Sb-doped Sn02 thin films derived from methacrylic acid modified tin(IV)alkoxides

    NASA Astrophysics Data System (ADS)

    Kololuoma, Terho K.; Tolonen, Ari; Johansson, Leena-Sisko; Campbell, Joseph M.; Karkkainen, Ari H. O.; Hiltunen, Marianne; Haatainen, Tomi; Rantala, Juha T.

    2002-10-01

    We report on the fabrication of transparent, conductive and directly photopatternable, pure and Sb-doped tin dioxide thin films. Precursors used were antimony(III)isopropoxide and a photo-reactive tin alkoxide synthesized from tin(IV)isopropoxide and methacrylic acid. The synthesis of methacrylic acid modified tin alkoxide was monitored in-situ using IR- and ESI-TOF mass spectroscopic techniques. Sb-doped organo-tin films were deposited via single layer spin coating. After deposition the films were patterned via photopolymerization, using a mercury I-line UV-lamp. All investigated materials could be patterned with 3 μm features. After development in isopropanol, the films were annealed in air, in order to obtain crystalline and conductive films. The electrical conductivities of the annealed thin films with, and without, UV-irradiation were determined using a linear four-point method. The direct photopatterning process was found to increase the film conductivity for all the Sb-doping levels tested. The mechanisms for the increased conductivity were characterized using AFM, XPS and XRD techniques.

  11. Characteristic corrosion resistance of nanocrystalline TiN films prepared by high density plasma reactive magnetron sputtering.

    PubMed

    Kim, J H; Kang, C G; Kim, Y T; Cheong, W S; Song, P K

    2013-07-01

    Nanocytalline TiN films were deposited on non-alkali glass and Al substrates by reactive DC magnetron sputtering (DCMS) with an electromagnetic field system (EMF). The microstructure and corrosion resistance of the TiN-coated Al substrates were estimated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical methods. All the TiN films shows that they have a (111) preferred orientation at room temperature. TiN films deposited on Al substrate using only DCMS 400 W showed a sheet resistance of 3.22 x 10-1 omega/symbol see texts (resistivity, 3.22 x 10-5 omegacm). On the other hand, a relatively low sheet resistance of 1.91 x 10-1 omega/symbol see text (1.91 x 10-5 omegacm) was obtained for the dense nanocrystalline TiN film deposited on Al substrate using DCMS 375 W+ EMF 25 W, indicating that the introduction of an EMF system enhanced the electrical properties of the TiN film. TiN films deposited on Al substrate at 400 degreesC had a (200) preferred orientation with the lowest sheet resistance of 1.28x10-1 omega/symbol see texts (1.28 x 10-5 omegacm) which was attributed to reduced nano size defects and an improvement of the crystallinity. Potentiostatic and Potentiodynamic tests with a TiN-coated Al showed good corrosion resistance (l/corr, = 2.03 microA/cm2, Ecorr = -348 mV) compared to the uncoated Al substrate (/corr = 4.45 microA/cm2, Ecorr = -650 mV). Furthermore, EMF system showed that corrosion resistance of the TiN film also was enhanced compared to DCMS only. For the TiN film deposited on Al substrate at 400 degreesC, corrosion current and potential was 0.63 micro/cm2 and -1.5 mV, respectively. This improved corrosion resistance of the TiN film could be attributed to the densification of the film caused by enhancement of nitrification with increasing high reactive nitrogen radicals.

  12. Tailoring of absorption edge by thermal annealing in tin oxide thin films

    SciTech Connect

    Thakur, Anup; Gautam, Sanjeev; Kumar, Virender; Chae, K. H.; Lee, Ik-Jae; Shin, Hyun Joon

    2015-05-15

    Tin oxide (SnO{sub 2}) thin films were deposited by radio-frequency (RF) magnetron sputtering on silicon and glass substrates in different oxygen-to-argon gas-flow ratio (O{sub 2}-to-Ar = 0%, 10%, 50%). All films were deposited at room temperature and fixed working pressures, 10 mTorr. The X-ray diffraction (XRD) measurement suggests that all films were crystalline in nature except film deposited in argon environment. Thin films were annealed in air at 200 °C, 400 °C and 600 °C for two hours. All films were highly transparent except the film deposited only in the argon environment. It was also observed that transparency was improved with annealing due to decrease in oxygen vacancies. Atomic force microscopy (AFM), results showed that the surface of all the films were highly flat and smooth. Blue shift was observed in the absorption edge with annealing temperature. It was also observed that there was not big change in the absorption edge with annealing for films deposited in 10% and 50% oxygen-to-argon gas-flow ratio.

  13. Study of indium tin oxide films exposed to atomic axygen

    NASA Technical Reports Server (NTRS)

    Snyder, Paul G.; De, Bhola N.; Woollam, John A.; Coutts, T. J.; Li, X.

    1989-01-01

    A qualitative simulation of the effects of atomic oxygen has been conducted on indium tin oxide (ITO) films prepared by dc sputtering onto room-temperature substrates, by exposing them to an RF-excited oxygen plasma and characterizing the resulting changes in optical, electrical, and structural properties as functions of exposure time with ellipsometry, spectrophotometry, resistivity, and X-ray measurements. While the films thus exposed exhibit reduced resistivity and optical transmission; both of these effects, as well as partial crystallization of the films, may be due to sample heating by the plasma. Film resistivity is found to stabilize after a period of exposure.

  14. Cadmium-Tin Oxide Transparent Conductive Thin Films

    NASA Astrophysics Data System (ADS)

    Stapinski, T.; Leja, E.; Marszalek, K.

    1986-09-01

    Cadmium-tin oxide (CTO) films have been prepared by d.c. reactive sputtering of Cd-Sn alloy targets in Ar-02 gas mixture. The electrical, optical and structural properties as well as the chemical composition of transparent conducting CTO films were found to depend on sputtering conditions. The value of optical band gap, optical constants, effective mass and relaxation time of electrons have been determined.

  15. Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Ali, N.; Hussain, A.; Ahmed, R.; Wan Shamsuri, W. N.; Fu, Y. Q.

    2016-12-01

    Low price thin film modules based on Copper antimony tin sulphide (CATS) are introduced for solar harvesting to compete for the already developed compound semiconductors. Here, CATS thin films were deposited on soda lime glass by thermal evaporation technique followed by a rapid thermal annealing in an argon atmosphere. From Our XRD analysis, it was revealed that the annealed samples were poly-crystalline and their crystallinity was improved with increasing annealing temperature. The constituent elements and their corresponding chemical states were identified using X-ray photoelectron spectroscopy. The obtained optical band gap of 1.4 eV for CATS thin film is found nearly equal to GaAs - one of the highly efficient thin film material for solar cell technology. Furthermore, our observed good optical absorbance and low transmittance for the annealed CATS thin films in the visible region of light spectrum assured the aptness of the CATS thin films for solar cell applications.

  16. SnS2 Thin Film Deposition by Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Jaber, Abdallah Yahia; Alamri, Saleh Noaiman; Aida, Mohammed Salah

    2012-06-01

    Tin disulfide (SnS2) thin films have been synthesized using a simplified spray pyrolysis technique using a perfume atomizer. The films were deposited using two different solutions prepared by the dilution of SnCl2 and thiourea in distilled water and in methanol. The obtained films have a microcrystalline structure. The film deposited using methanol as the solvent is nearly stochiometric SnS2 with a spinel phase having a (001) preferential orientation. The film prepared with an aqueous solution is Sn-rich. Scanning electronic microscopy (SEM) images reveal that the film deposited with the aqueous solution is rough and is formed with large wires. However, the film deposited with methanol is dense and smooth. Conductivity measurements indicate that the aqueous solution leads to an n-type semiconductor, while methanol leads to a p-type semiconductor.

  17. Antimony-Doped Tin Oxide Thin Films Grown by Home Made Spray Pyrolysis Technique

    NASA Astrophysics Data System (ADS)

    Yusuf, Gbadebo; Babatola, Babatunde Keji; Ishola, Abdulahi Dimeji; Awodugba, Ayodeji O.; Solar cell Collaboration

    2016-03-01

    Transparent conducting antimony-doped tin oxide (ATO) films have been deposited on glass substrates by home made spray pyrolysis technique. The structural, electrical and optical properties of the ATO films have been investigated as a function of Sb-doping level and annealing temperature. The optimum target composition for high conductivity and low resistivity was found to be 20 wt. % SnSb2 + 90 wt. ATO. Under optimized deposition conditions of 450oC annealing temperature, electrical resistivity of 5.2×10-4 Ω -cm, sheet resistance of 16.4 Ω/sq, average optical transmittance of 86% in the visible range, and average optical band-gap of 3.34eV were obtained. The film deposited at lower annealing temperature shows a relatively rough, loosely bound slightly porous surface morphology while the film deposited at higher annealing temperature shows uniformly distributed grains of greater size. Keywords: Annealing, Doping, Homemade spray pyrolysis, Tin oxide, Resistivity

  18. Ovonic switching in tin selenide thin films. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Baxter, C. R.

    1974-01-01

    Amorphous tin selenide thin films which possess Ovonic switching properties were fabricated using vacuum deposition techniques. Results obtained indicate that memory type Ovonic switching does occur in these films the energy density required for switching from a high impedance to a low impedance state is dependent on the spacing between the electrodes of the device. The switching is also function of the magnitude of the applied voltage pulse. A completely automated computer controlled testing procedure was developed which allows precise control over the shape of the applied voltage switching pulse. A survey of previous experimental and theoretical work in the area of Ovonic switching is also presented.

  19. Nano-crystalline porous tin oxide film for carbon monoxide sensing

    NASA Technical Reports Server (NTRS)

    Liu, Chung-Chiun (Inventor); Savinell, Robert F. (Inventor); Jin, Zhihong (Inventor)

    2000-01-01

    A tin oxide sol is deposited on platinum electrodes (12) of a sensor (10). The sol is calcined at a temperature of 500 to 800.degree. C. to produce a thin film of tin oxide with a thickness of about 150 nm to 2 .mu. and having a nano-crystalline structure with good stability. The sensor rapidly detects reducing gases, such as carbon monoxide, or hydrocarbons and organic vapors. Sensors using films calcined at around 700.degree. C. have high carbon monoxide selectivity with a response time of around 4 minutes and a recovery time of 1 minute, and therefore provide good detection systems for detection of trace amounts of pollutants such as toxic and flammable gases in homes, industrial settings, and hospitals.

  20. Electrically conducting polyimide film containing tin complexes

    NASA Technical Reports Server (NTRS)

    St. Clair, Anne K. (Inventor); Ezzell, Stephen A. (Inventor); Taylor, Larry T. (Inventor); Boston, Harold G. (Inventor)

    1996-01-01

    Disclosed is a thermally-stable SnO.sub.2 -surfaced polyimide film wherein the electrical conductivity of the SnO.sub.2 surface is within the range of about 3.0.times.10.sup.-3 to about 1.times.10.sup.-2 ohms.sup.-1,. Also disclosed is a method of preparing this film from a solution containing a polyamic acid and SnCl.sub.4 (DMSO).sub.2.

  1. Influence of annealing temperature and environment on the properties of indium tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Wang, R. X.; Beling, C. D.; Fung, S.; Djurisic, A. B.; Ling, C. C.; Kwong, C.; Li, S.

    2005-06-01

    Indium tin oxide (ITO) thin films were deposited on glass substrates using the e-beam evaporating technique. The influence of deposition rate and post-deposition annealing on the optical properties of the films was investigated in detail. It is found that the deposition rate and annealing conditions strongly affect the optical properties of the films. The transmittance of films greatly increases with increasing annealing temperature below 300°C but drastically drops at 400°C when they are annealed in forming gas (mixed N2 and H2 gas). An interesting phenomenon observed is that the transmittance of the darkened film can recover under further 400°C annealing in air. Atomic force microscopy, x-ray diffraction and x-ray photoemission spectroscopy were employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the loss and re-incorporating of oxygen are responsible for the reversible behaviour of the ITO thin films.

  2. Controlled growth of antimony-doped tin dioxide thin films by atomic layer epitaxy

    NASA Astrophysics Data System (ADS)

    Viirola, H.; Niinistoe, L.

    1994-11-01

    Antimony-doped tin dioxide thin films were deposited on glass substrates by atomic layer epitaxy using SnCl4, SbCl5 and H2O as reactants. The growth experiments were carried out at 500 C. The effect of Sb doping on the growth rate, crystal texture and electrical and optical properties was studied. Spectrophotometry, secondary ion mass spectrometry, X-ray diffraction and electron spectroscopy for chemical analysis, as well as sheet resistance and Hall measurements were used to characterize the films. The films were highly uniform with only small thickness and sheet resistance variations. The films were polycrystalline with their crystallites having a preferred orientation, which depended on the Sb doping level and film thickness.

  3. Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films

    NASA Astrophysics Data System (ADS)

    Wang, R. X.; Beling, C. D.; Fung, S.; Djurišić, A. B.; Ling, C. C.; Li, S.

    2005-02-01

    The influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In.

  4. Genesis of the Silsilah tin deposit, Kingdom of Saudi Arabia

    USGS Publications Warehouse

    Kamilli, Robert J.; Criss, R.E.

    1996-01-01

    The Silsilah tin deposit (lat 25 degrees 06' N, long 42 degrees 40' E) consists of a group of pervasively greisenized, flat-topped granite cupolas within a 12-km-diam ring complex. The greisens contain varying amounts of disseminated cassiterite and wolframite. Several types of quartz veins are peripheral to the greisens; some of these contain minor wolframite. The deposit is genetically associated with a highly differentiated, peraluminous alkali-feldspar granite (587 + or - 8 Ma) that is part of a mostly peralkaline, igneous ring complex intruded into Late Proterozoic, immature sandstones of the Murdama Group. We recognize four distinct phases of the peraluminous granite. Only the smallest, most highly differentiated cupolas contain significant tin greisen mineralization. Greisens developed beneath aplitic carapaces that overlie the granite and created impermeable barriers to rising volatiles. The geometry of a cupola correlates strongly with the intensity of alteration; cupolas with the smallest cross sectional areas and steepest marginal contacts have the most intensely greisenized apexes. The paragenetic sequence can be divided into five stages: pegmatite formation, locally pervasive albitization, locally pervasive greisenization and deposition of cassiterite, deposition of quartz-wolframite veins, and deposition of quartz veins with minor base metal sulfides. Pressure-corrected fluid inclusion filling temperatures indicate that the hydrothermal system generally cooled as it evolved and that the delta 18O values of the hydrothermal quartz increased from 10.8 to 15.7 per mil. Calculated delta 18O values of the hydrothermal fluid varied concomitantly from the pegmatite stage (delta 18O fluid approximately 8.6ppm; T [asymp] 550 degrees C) to the greisen stage (5.4 and 5.6[ppm; T [asymp] 360 degrees C), the quartz-wolframite vein stage (6.3 and 7.5ppm; T [asymp] 390 degrees C), and the late vein stage (4.0 and 5.1ppm; T [asymp] 270 degrees C). This evolution

  5. Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

    NASA Astrophysics Data System (ADS)

    Ravichandran, K.; Muruganantham, G.; Sakthivel, B.

    2009-11-01

    Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO 2:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl 2 precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08×10 14 lines/m 2) when compared with that of the undoped film (13.2×10 14 lines/m 2), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 Ω/□) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl 2 precursor (without using methanol or ethanol).

  6. Ion beam deposited protective films

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1981-01-01

    Single or dual ion beam sources were used to deposit thin films for different applications. Metal and metal oxide films were evaluated as protective coatings for the materials. Film adherence was measured and the most promising films were then tested under environments similar to operating conditions. It was shown that some materials do protect die material (H-13 steel) and do reduce thermal fatigue. Diamondlike films have many useful applications. A series of experiments were conducted to define and optimize new approaches to the manufacture of such films. A dual beam system using argon and methane gases was developed to generate these films.

  7. Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

    DOEpatents

    Teeter, Glenn; Du, Hui; Young, Matthew

    2013-08-06

    A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

  8. Room temperature synthesis of indium tin oxide nanotubes with high precision wall thickness by electroless deposition.

    PubMed

    Boehme, Mario; Ionescu, Emanuel; Fu, Ganhua; Ensinger, Wolfgang

    2011-01-01

    Conductive nanotubes consisting of indium tin oxide (ITO) were fabricated by electroless deposition using ion track etched polycarbonate templates. To produce nanotubes (NTs) with thin walls and small surface roughness, the tubes were generated by a multi-step procedure under aqueous conditions. The approach reported below yields open end nanotubes with well defined outer diameter and wall thickness. In the past, zinc oxide films were mostly preferred and were synthesized using electroless deposition based on aqueous solutions. All these methods previously developed, are not adaptable in the case of ITO nanotubes, even with modifications. In the present work, therefore, we investigated the necessary conditions for the growth of ITO-NTs to achieve a wall thickness of around 10 nm. In addition, the effects of pH and reductive concentrations for the formation of ITO-NTs are also discussed.

  9. Effect of solvent ratio on the optoelectronic properties of fluorine doped tin oxide thin films

    SciTech Connect

    Karthick, P.; Divya, V.; Sridharan, M.; Jeyadheepan, K.

    2015-06-24

    Fluorine doped tin oxide (FTO) thin films were deposited on to the well cleaned microscopic glass substrates using nebulized-spray pyrolysis (n-SP) technique by varying the water to ethanol solvent proportion. The deposited thin films were characterized by X-ray diffraction (XRD), UV-Vis-NIR spectroscopy, field emission scanning electron microscopy and Hall measurements to study the structural, optical, surface morphological and electrical properties of the films, respectively. Results of the analyzes show that the films are polycrystalline, having tetragonal structure with the preferred orientation along (110) plane. The grain size varies between 7 to 20 nm. The optimized films exhibit the optical transparency of 85 % at the wavelength of 580 nm. The optical bandgap lies in the range of 3.94 to 4 eV. The optimized films, deposited with 40 % of ethanol proportion are having the mean resistivity 4.72×10{sup −3} Ω-cm, carrier concentration 1.79×10{sup 20} cm{sup 3} and the mobility 7 cm{sup 2}/Vs.

  10. Heteroepitaxial structures of SrTiO3/TiN on Si(100) by in situ pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Vispute, R. D.; Narayan, J.; Dovidenko, K.; Jagannadham, K.; Parikh, N.; Suvkhanov, A.; Budai, J. D.

    1996-12-01

    High-quality ceramics based heteroepitaxial structures of oxide-nitride-semiconductors, i.e., SrTiO3/TiN/Si(100) have been fabricated by in situ pulsed laser deposition. The dependence of substrate temperature and oxygen partial pressure on the crystalline quality of the SrTiO3 films on Si with epitaxial TiN template has been examined. We found that epitaxial growth occurs on TiN/Si(100) above 500 °C, initially at a reduced O2 pressure (10-6 Torr), and followed by a deposition in the range of 5-10×10-4 Torr. X-ray diffraction (Θ, ω, and Φ scans) and transmission electron microscope (TEM) results revealed an excellent alignment of SrTiO3 and TiN films on Si(100) with a cube-on-cube epitaxy. Rutherford backscattering and ion channeling results show a channeling minimum yield (χmin) of ˜13% for the SrTiO3 films. High-resolution TEM results on the SrTiO3/TiN interface show that the epitaxial SrTiO3 film is separated from the TiN by an uniform 80-90 Å crystalline interposing layer presumably of TiNxO1-x (oxy-nitride). The SrTiO3 film fabricated at 700 °C showed a high relative dielectric constant of 312 at the frequency of 1 MHz. The electrical resistivity and the breakdown field of the SrTiO3 films were more than 5×1012 Ω cm and 6×105 V cm-1, respectively. An estimated leakage current density measured at an electric field of 5×105 V/cm-1 was less than 10-7 A/cm2.

  11. Optimisation of amorphous zinc tin oxide thin film transistors by remote-plasma reactive sputtering

    NASA Astrophysics Data System (ADS)

    Niang, K. M.; Cho, J.; Heffernan, S.; Milne, W. I.; Flewitt, A. J.

    2016-08-01

    The influence of the stoichiometry of amorphous zinc tin oxide (a-ZTO) thin films used as the semiconducting channel in thin film transistors (TFTs) is investigated. A-ZTO has been deposited using remote-plasma reactive sputtering from zinc:tin metal alloy targets with 10%, 33%, and 50% Sn at. %. Optimisations of thin films are performed by varying the oxygen flow, which is used as the reactive gas. The structural, optical, and electrical properties are investigated for the optimised films, which, after a post-deposition annealing at 500 °C in air, are also incorporated as the channel layer in TFTs. The optical band gap of a-ZTO films slightly increases from 3.5 to 3.8 eV with increasing tin content, with an average transmission ˜90% in the visible range. The surface roughness and crystallographic properties of the films are very similar before and after annealing. An a-ZTO TFT produced from the 10% Sn target shows a threshold voltage of 8 V, a switching ratio of 108, a sub-threshold slope of 0.55 V dec-1, and a field effect mobility of 15 cm2 V-1 s-1, which is a sharp increase from 0.8 cm2 V-1 s-1 obtained in a reference ZnO TFT. For TFTs produced from the 33% Sn target, the mobility is further increased to 21 cm2 V-1 s-1, but the sub-threshold slope is slightly deteriorated to 0.65 V dec-1. For TFTs produced from the 50% Sn target, the devices can no longer be switched off (i.e., there is no channel depletion). The effect of tin content on the TFT electrical performance is explained in the light of preferential sputtering encountered in reactive sputtering, which resulted in films sputtered from 10% and 33% Sn to be stoichiometrically close to the common Zn2SnO4 and ZnSnO3 phases.

  12. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    SciTech Connect

    Morales-Masis, M. Ding, L.; Dauzou, F.; Jeangros, Q.; Hessler-Wyser, A.; Nicolay, S.; Ballif, C.

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  13. VACUUM DEPOSITION OF THIN FILMS,

    DTIC Science & Technology

    The book deals with methods of obtaining and processing thin films , methods of measuring the deposition rate and thickness of thin-film layers, and...the main fields of application of thin films . Vacuum requirements and the requirements for the composition of the residual medium in thermal...evaporation and cathode sputtering are given, and modern methods of producing and measuring vacuums and the equipment used in obtaining thin films are described. (Author)

  14. Properties of ITO thin films deposited on amorphous and crystalline substrates with e-beam evaporation

    NASA Astrophysics Data System (ADS)

    Wang, R. X.; Beling, C. D.; Djurisic, A. B.; Li, S.; Fung, S.

    2004-06-01

    Indium tin oxide (ITO) thin films were deposited using the e-beam evaporation method on amorphous and crystalline substrates under identical conditions. The properties of the films were investigated using optical transmittance, XRD and XPS techniques. It was found that the properties of the films depend strongly on the nature of the substrate surface. Analysis suggests that changes in chemical composition and microstructure of the ITO films deposited on crystalline and amorphous substrates are responsible for the differences in optical properties.

  15. Anodization of Ti thin film deposited on ITO.

    PubMed

    Sadek, Abu Z; Zheng, Haidong; Latham, Kay; Wlodarski, Wojtek; Kalantar-Zadeh, Kourosh

    2009-01-06

    We have investigated several key aspects for the self-organization of nanotubes in RF sputtered titanium (Ti) thin films formed by the anodization process in fluoride-ion-containing neutral electrolytes. Ti films were deposited on indium tin oxide (ITO) glass substrates at room temperature and 300 degrees C, and then anodized. The films were studied using scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-vis spectrometry before and after anodization. It was observed that anodization of high temperature deposited films resulted in nanotube type structures with diameters in the range of 10-45 nm for an applied voltage of 5-20 V. In addition, the anatase form of TiO(2) is formed during the anodization process which is also confirmed using photocurrent measurements. However, the anodization of room temperature deposited Ti films resulted in irregular pores or holes.

  16. Characterization of reliability of printed indium tin oxide thin films.

    PubMed

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments.

  17. Pulsed laser deposited indium tin oxides as alternatives to noble metals in the near-infrared region.

    PubMed

    Fang, Xu; Mak, C L; Zhang, Shiyu; Wang, Zhewei; Yuan, Wenjia; Ye, Hui

    2016-06-08

    Transparent conductive indium tin oxide thin films with thickness around 200 nm were deposited on glass substrates by pulsed laser deposition technology. The microstructure and the electrical and optical properties of the ITO films deposited under different oxygen pressures and substrate temperatures were systematically investigated. Distinct different x-ray diffraction patterns revealed that the crystallinity of ITO films was highly influenced by deposition conditions. The highest carrier concentration of the ITO films was obtained as 1.34  ×  10(21) cm(-3) with the lowest corresponding resistivity of 2.41  ×  10(-4) Ω cm. Spectroscopic ellipsometry was applied to retrieve the dielectric permittivity of the ITO films to estimate their potential as plasmonic materials in the near-infrared region. The crossover wavelength (the wavelength where the real part of the permittivity changes from positive to negative) of the ITO films exhibited high dependence on the deposition conditions and was optimized to as low as 1270 nm. Compared with noble metals (silver or gold etc), the lower imaginary part of the permittivity (<3) of ITO films suggests the potential application of ITO in the near-infrared range.

  18. Oxygen incorporation and charge donor activation via subplantation during growth of indium tin oxide films

    SciTech Connect

    Amassian, A.; Dudek, M.; Zabeida, O.; Gujrathi, S. C.; Klemberg-Sapieha, J. E.; Martinu, L.

    2009-03-15

    The use of plasma assistance is shown to enhance the optoelectronic properties (i.e., transparency, free carrier density, and conductivity) of indium tin oxide (ITO) deposited by reactive magnetron sputtering by promoting the incorporation of oxygen in substoichiometric oxide films during magnetron sputtering. The authors demonstrate that subplantation of oxygen ions (O{sub 2}{sup +} and O{sup +}), i.e., their implantation to depths of several nanometers below the growth surface, is the primary pathway by which radio frequency plasma assistance at the substrate surface enhances oxygen incorporation during reactive magnetron sputtering of ITO. These conclusions are supported independently by elastic recoil detection measurements of ITO films in the time-of-flight regime and Monte Carlo TRIDYN simulations of oxygen ion bombardment in the reactive low-pressure plasma environment. The findings indicate that subplantation plays a crucial role in improving the optoelectronic properties of O-deficient ITO films.

  19. Synthesis of Tantalum-Doped Tin Oxide Thin Films by Magnetron Sputtering for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc Minh; Luu, Manh Quynh; Nguyen, Minh Hieu; Nguyen, Duy Thien; Bui, Van Diep; Truong, Thanh Tu; Pham, Van Thanh; Nguyen-Tran, Thuat

    2017-01-01

    Tantalum-doped tin oxide transparent conductive thin films were deposited on glass substrates by radio frequency and direct current reactive magnetron co-sputtering methods in an argon and oxygen environment. Optimization of the thin films for photovoltaic applications was performed using a dimensionless figure of merit by combining electrical and transparency properties. The optimized thin film showed a weight-averaged transmittance of 83%, a band gap value of 3.2 eV, resistivity of 5.2 × 10-3 Ω cm, and bulk carrier concentration of 1.2 × 1020 cm-3. The lowest resistivity among all films was 2.1 × 10-3 Ω cm, corresponding to a weight-averaged transmittance of 62%. The optimized deposition condition was carried out by co-sputtering on heated substrates at 270°C. Thin films deposited under this optimized condition were applied for our perovskite solar cells, and demonstrated promising power conversion efficiency.

  20. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    SciTech Connect

    Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha; Louis, Godfrey; Vijayakumar, K. P.; Kumar, K. Rajeev

    2015-06-24

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.

  1. Structural and optical characterisation of tin dioxide thin films by sol-gel dip coating technique

    NASA Astrophysics Data System (ADS)

    Lekshmy, S. Sujatha; Berlin, I. John; Maneeshya, L. V.; Anitha; Joy, K.

    2015-02-01

    Tin oxide (SnO2) thin films were deposited on quartz substrates using sol-gel dip coating technique. X-ray diffraction (XRD) pattern indicated that the film annealed in air at 350°C was amorphous in nature, whereas, the films annealed in oxygen atmosphere at 350°C showed crystalline phase. The films were further annealed in oxygen atmosphere at 450°C and 550°C. All the diffraction peaks can be indexed to the tetragonal phase of SnO2 The surface morphology (SEM) showed that surface of all films were continuous and without micro cracks. The Energy dispersive X-ray spectroscopy (EDXS) spectra indicated an increase in the concentration of oxygen content with increase in annealing temperature. The energy band gap value for the film annealed in air was 3.88 eV. The optical band gap increased to 4.05 eV when annealed in O2 atmosphere. The photoluminescence (PL) spectra showed the presence of emission peaks in UV region and visible region of the electromagnetic spectra. Transparent oxide semiconductor SnO2 film finds potential application as an active channel layer for transparent thin film transistor.

  2. High angular sensitivity thin film tin oxide sensor

    NASA Astrophysics Data System (ADS)

    Kaur, Davinder; Madaan, Divya; Sharma, V. K.; Kapoor, A.

    2016-05-01

    We present theoretical anlaysis of a thin film SnO2 (Tin Oxide) sensor for the measurement of variation in the refractive index of the bulk media. It is based on lossy mode resonance between the absorbing thin film lossy modes and the evanescent wave. Also the addition of low index dielectric matching layer between the prism and the lossy waveguiding layer future increase the angular sensitivity and produce an efficient refractive index sensor. The angular interrogation is done and obtained sensitivity is 110 degree/RIU. Theoretical analysis of the proposed sensor based on Fresnel reflection coefficients is presented. This enhanced sensitivity will further improve the monitoring of biomolecular interactions and the higher sensitivity of the proposed configurations makes it to be a much better option to be employed for biosensing applications.

  3. Thickness dependence of transport properties of doped polycrystalline tin oxide films

    SciTech Connect

    Belanger, D.; Dickson, J.I.; Dodelet, J.P.; Lombos, B.A.

    1985-06-01

    Tin oxide films were deposited by chemical vapor deposition on borosilicate and fused silica substrates using dibutyltin diacetate (DBTD) as tin feedstock and SbC/sub 5/ or CC/sub 3/-CF/sub 3/ as dopants. The film growth rate was measured as a function of dopant/DBTD ratio, temperature, and film thickness. Scanning electron microscopy and x-ray diffraction spectra of the films were used to determine the grain sizes and the preferential orientations of the crystallites in the film as a function of film thickness. Optical and electrical properties were measured. A model is proposed to elucidate the variation of transport properties of doped SnO/sub 2/ as a function of film thickness. It could b shown with this model that the thickness dependence of the conductivity of doped SnO/sub 2/:Sb and SnO/sub 2/:F films could be analyzed in terms of carrier concentration taking into consideration deep-level compensation. The number of carriers is decreased by electron trapping at Sb(III) or Sn(II) surface states when antimony or fluorine are used as dopant, respectively. The model based on results of the literature related to a single crystal with (110) orientation is extended in this work to other crystallite orientations. The present analysis indicates that deep levels appear only on the grain boundary surfaces with (110), (211), and (301) orientations, and not on the (200) and (400) ones. The concentration of free carriers can be calculated on the basis of x-ray diffraction spectra indicating an estimate of the relative fraction of the crystallites with each orientation as a function of the film thickness. The conductivities of the films can be computed using this model and taking a single value for the electron mobility of 19 cm/sup 2/ (V-s)/sup -1/ for all film thickness and a total donor concentration of 2 x 10/sup 20/ cm/sup -3/. All the obtained experimental data can be accounted for exclusively on the basis of film-thickness dependent carrier concentration.

  4. The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition

    SciTech Connect

    Ahn, Byung Du; Choi, Dong-won Choi, Changhwan; Park, Jin-Seong

    2014-09-01

    We investigated the electrical properties of zinc tin oxide (ZTO) films deposited via atomic layer deposition and compared them to ZnO and SnO{sub 2} films as a function of the annealing temperature. The ZTO and ZnO, except for SnO{sub 2}, films exhibited an electrical transition from a metal to semiconductor characteristics when annealed above 300 °C. The X-ray photoelectron spectroscopy analyses indicate that the relative area of the oxygen vacancy-related peak decreased from 58% to 41% when annealing at temperatures above 400 °C. Thin film transistors incorporating ZTO active layers demonstrated a mobility of 13.2 cm{sup 2}/V s and a negative bias instability of −0.2 V.

  5. A novel synthesis of tin oxide thin films by the sol-gel process for optoelectronic applications

    SciTech Connect

    Marikkannan, M.; Vishnukanthan, V.; Vijayshankar, A.; Mayandi, J.; Pearce, J. M.

    2015-02-15

    A novel and simple chemical method based on sol-gel processing was proposed to deposit metastable orthorhombic tin oxide (SnOx) thin films on glass substrates at room temperature. The resultant samples are labeled according to the solvents used: ethanol (SnO-EtOH), isopropanol (SnO-IPA) and methanol (SnO-MeOH). The variations in the structural, morphological and optical properties of the thin films deposited using different solvents were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence (PL) analysis. The XRD patterns confirm that all the films, irrespective of the solvents used for preparation, were polycrystalline in nature and contained a mixed phases of tin (II) oxide and tin (IV) oxide in a metastable orthorhombic crystal structure. FTIR spectra confirmed the presence of Sn=O and Sn-O in all of the samples. PL spectra showed a violet emission band centered at 380 nm (3.25 eV) for all of the solvents. The UV-vis spectra indicated a maximum absorption band shown at 332 nm and the highest average transmittance around 97% was observed for the SnO-IPA and SnO-MeOH thin film samples. The AFM results show variations in the grain size with solvent. The structural and optical properties of the SnO thin films indicate that this method of fabricating tin oxide is promising and that future work is warranted to analyze the electrical properties of the films in order to determine the viability of these films for various transparent conducting oxide applications.

  6. Vapor deposition of thin films

    DOEpatents

    Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  7. Temperature dependence of inductively coupled plasma assisted growth of TiN thin films.

    SciTech Connect

    Meng, W. J.; Curtis, T. J.; Rehn, L. E.; Baldo, P. M.; Materials Science Division; Louisiana State Univ.

    1999-11-01

    The use of low pressure high density plasmas to assist the synthesis of ceramic thin film materials is in its infancy. Using an inductively coupled plasma assisted magnetron sputtering system, we examine the dependence of plasma-assisted growth of TiN thin films on growth temperature at different ratios of ion flux to neutral atom flux. Our results indicate that a temperature independent densification of TiN films occurs above a certain ion to neutral atom flux ratio. As an example of this temperature independent densification, we demonstrate the formation of dense B1 TiN crystalline thin films at growth temperatures down to {approx}100 K.

  8. Synthesis and Properties of Tin Sulfide Thin Films from Nanocolloids Prepared by Pulsed Laser Ablation in Liquid.

    PubMed

    Johny, Jacob; Sepulveda-Guzman, Selene; Krishnan, Bindu; Avellaneda, David A; Aguilar Martinez, Josue A; Shaji, Sadasivan

    2016-12-15

    Tin sulfide (SnS) nanoparticles were synthesized by pulsed laser ablation in liquid (PLAL) technique using an Nd:YAG laser operated at 532 nm. SnS thin films were deposited by spraying the colloidal suspension onto the heated substrates. The influence of different liquid media (dimethyl formamide and isopropyl alcohol) on the thin film properties were studied. Morphology, crystalline structure, and chemical composition of the nanoparticles were identified using transmission electron microscopy with energy dispersive X-ray analysis. The crystalline structure of the thin films was analyzed by using grazing incidence X-ray diffraction, and the chemical states by X-ray photoelectron spectroscopy. Scanning electron microscopy was employed for the morphological analysis of the thin films. Annealing the films at 380 °C improved the crystallinity of the films exhibiting a layered morphology, which may be useful in optoelectronic and sensing applications. Cyclic voltammetry studies showed that the films have good electrochemical properties.

  9. Influence of the triethanolamine concentration on the optical properties of tin sulphide thin films by the Photothermal Deflection Spectroscopy

    NASA Astrophysics Data System (ADS)

    Gaied, I.; Akkari, A.; Yacoubi, N.; Kamoun, N.

    2010-03-01

    The optical properties of Tin sulphide thin films grown on a glass substrate by chemical bath deposition were investigated by the Photothermal Deflection Spectroscopy. The experimental normalised amplitude curves of the photothermal signal versus wavelength are compared to the corresponding theoretical ones versus optical absorption coefficient in order to determine the optical absorption spectrum. Then using the Tauc law, one can deduce the energy gap. The influence of the triethanolamine concentration (TEA) in the solution bath on the optical properties was successfully studied.

  10. The electronic structure of co-sputtered zinc indium tin oxide thin films

    SciTech Connect

    Carreras, Paz; Antony, Aldrin; Bertomeu, Joan; Gutmann, Sebastian; Schlaf, Rudy

    2011-10-01

    Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses {approx}50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO{sub 2} films.

  11. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    NASA Astrophysics Data System (ADS)

    Mora, Angel; Khan, Kamran A.; El Sayed, Tamer

    2014-11-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show that the new model is suitable for cyclic loading. After calibration with experimental data, we are able to capture the stress-strain behavior and changes in electrical resistance of ITO thin films. We are also able to predict the crack density using calibrations from our previous model. Finally, we demonstrate the capabilities of our model based on simulations using material properties reported in the literature. Our model is implemented in the commercially available finite element software ABAQUS using a user subroutine UMAT. [Figure not available: see fulltext.

  12. Deposited films with improved microstructures

    DOEpatents

    Patten, James W.; Moss, Ronald W.; McClanahan, Edwin D.

    1984-01-01

    Methods for improving microstructures of line-of-sight deposited films are described. Columnar growth defects ordinarily produced by geometrical shadowing during deposition of such films are eliminated without resorting to post-deposition thermal or mechanical treatments. The native, as-deposited coating qualities, including homogeneity, fine grain size, and high coating-to-substrate adherence, can thus be retained. The preferred method includes the steps of emitting material from a source toward a substrate to deposit a coating non-uniformly on the substrate surface, removing a portion of the coating uniformly over the surface, again depositing material onto the surface, but from a different direction, and repeating the foregoing steps. The quality of line-of-sight deposited films such as those produced by sputtering, progressively deteriorates as the angle of incidence between the flux and the surface becomes increasingly acute. Depositing non-uniformly, so that the coating becomes progressively thinner as quality deteriorates, followed by uniformly removing some of the coating, such as by resputtering, eliminates the poor quality portions, leaving only high quality portions of the coating. Subsequently sputtering from a different direction applies a high quality coating to other regions of the surface. Such steps can be performed either simultaneously or sequentially to apply coatings of a uniformly high quality, closed microstructure to three-dimensional or large planar surfaces.

  13. Non-aqueous electrodeposition of porous tin-based film as an anode for lithium-ion battery

    NASA Astrophysics Data System (ADS)

    Gu, C. D.; Mai, Y. J.; Zhou, J. P.; You, Y. H.; Tu, J. P.

    2012-09-01

    Porous tin-based films are electrodeposited on copper foils from a choline chloride/ethylene glycol based electrolyte containing SnCl2·2H2O without any complexing agent or additive. Increasing the deposition time and voltage produces thicker films. The initially deposited Sn grains are relatively uniform with an average size of 200-300 nm and a kind of self-assembly distribution constructing an open and bicontinuous porous network. The architecture of these films possesses a double-layer structure, i.e. SnO2 (superficial layer)/Sn-Cu alloy (bottom layer), which is revealed by X-ray diffractometer and X-ray photoelectron spectroscopy. The electrochemical performance of the porous tin-based films as anode for lithium-ion batteries is measured. Although the capacity fades gradually with repeated cycling, a reversible capacity of 300-350 mAh g-1 is maintained for more than 50 cycles, which suggests that the in situ formed Sn--Cu alloy could provide an interlocking interface between active materials and current collector. Therefore, the tin's shedding from the current collector can be restrained. Moreover, the inactive materials, such as the oxide in the superficial layer and the Cu in the bottom layer, could also act as buffers to relieve the induced volume expansion of Sn during the repeated lithiathion/delithiation process, thus giving the good cycle performances.

  14. Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts

    NASA Astrophysics Data System (ADS)

    Wang, R. X.; Xu, S. J.; Djurišić, A. B.; Beling, C. D.; Cheung, C. K.; Cheung, C. H.; Fung, S.; Zhao, D. G.; Yang, H.; Tao, X. M.

    2006-07-01

    Indium-tin-oxide (ITO)/n-GaN Schottky contacts were prepared by e-beam evaporation at 200°C under various partial pressures of oxygen. X-ray photoemission spectroscopy and positron beam measurements were employed to obtain chemical and structural information of the deposited ITO films. The results indicated that the observed variation in the reverse leakage current of the Schottky contact and the optical transmittance of the ITO films were strongly dependent on the quality of the ITO film. The high concentration of point defects at the ITO-GaN interface is suggested to be responsible for the large observed leakage current of the ITO/n-GaN Schottky contacts.

  15. Defects evolution and their impacts on conductivity of indium tin oxide thin films upon thermal treatment

    SciTech Connect

    Li, Qichao; Mao, Wenfeng; Zhou, Yawei; Yang, Chunhong; Liu, Yong; He, Chunqing

    2015-07-14

    Indium tin oxide (ITO) thin films were deposited on silicon substrates by radio-frequency magnetron sputtering. The influence of annealing temperature on the crystallite, surface morphology, defects evolution, and electrical property of the thin films was studied. The conductivity of the ITO films was significantly enhanced by two orders of magnitude by increasing the annealing temperature up to 600 °C, which was interpreted in point view of defects evolution in ITO films as revealed by positron annihilation. It was interesting to find that positron diffusion length was amazingly comparable to crystallite size in ITO films annealed below 300 °C, indicating positrons were preferentially localized and annihilated in defects around crystallite boundaries. By further increasing the temperature, positron diffusion length was far beyond the grain size with little increment. This demonstrated that defects were effectively removed around grain boundaries. The results indicated defect structure around crystallite/grain boundaries played an important role on carrier transportation in nanocrystal ITO films.

  16. Improved conductivity of indium-tin-oxide film through the introduction of intermediate layer

    NASA Astrophysics Data System (ADS)

    Ng, S. W.; Yam, F. K.; Beh, K. P.; Tneh, S. S.; Hassan, Z.

    2016-09-01

    A thin intermediate layer (Ag, AuSn, In, Ni, Sn, SiO2) was individually deposited on glass substrates prior to the deposition of indium-tin-oxide (ITO) thin film by radio-frequency (RF) magnetron sputtering employing ITO target (composition ratio of In2O3:SnO2 = 9:1). The structural, optical and electrical properties were investigated to compare the ITO thin film with and without an intermediate layer. The preferential orientation of all ITO films was along (222) plane. Although all thin films were polycrystalline, the presence of intermediate layer promoted the overall crystallinity. The sheet resistance and resistivity of the ITO film were reduced from ∼68 Ω/□ to ∼29-45 Ω/□, and 16.2 × 10-4 Ω cm up to 7.58 × 10-4 Ω cm, respectively, by inserting a thin metal layer underneath the ITO film, and it is dependent on the degree of crystallization. The optical transmittance in the visible region varies from 40 to 88% for different samples. Based on the evaluation from Tauc plot, the optical band gap falls in the range of 4.02-4.12 eV. Physical film thickness was compared with that evaluated by optical measurement in the visible range and the physical thickness was found to be smaller. Similarly, the carrier concentration/scattering time from Hall effect measurement were also compared with that from optical measurement in the infrared region. Haacke's figure of merit (FOM) was employed to assess the quality of the ITO films, and the highest FOM is credited to ITO/In up to ∼8 × 10-3 Ω-1 in the visible light region.

  17. Mineralogy of the Santa Fe Tin deposit, Bolivia

    NASA Astrophysics Data System (ADS)

    Jiménez-Franco, Abigail; Alfonso, Pura; Canet, Carles; Garcia-Valles, Maite; Elvys Trujillo, Juan

    2014-05-01

    Santa Fe is a Sn-Zn-Pb-Ag ore deposit located in the Oruro district, Central Andean Tin Belt, Bolivia. Mineralization occurs in veins and disseminations. It is hosted in Silurian shales and greywackes. The sedimentary sequence is folded and unconformably covered by a volcanic complex of the Morococala Formation, mainly constituted by tuffs of Miocene age. A wide Nº40 shear zone and two systems of fracture are developed. A Nº40 fracture system, dipping 60ºW, which hosts Sn and Zn minerals, and other in the same direction but dipping 75ºE, which is related to Zn-Pb-Ag veins. The mineralization is associated to intrusive felsic magmatism. Although there are not intrusive rocks in Santa Fe, a dyke and the felsic San Pablo stock occur at a distance of about 10 km. In the present work we describe the geology and mineralogy of the Santa Fe deposit. X-ray diffraction, scanning electron microscopy and electron microprobe analyses were used to characterize the minerals. Veins are filled with quartz and an ore mineral assemblage of cassiterite, sulfides and sulfosalts. Cassiterite constitutes the earliest formed mineralization. Preliminar microprobe analyses indicate that it is nearly pure, with negligible contents in Nb and Ta. Rutile occurs as a late phase associated with a late generation of cassiterite. It forms thin neddle-like crystals. In addition, Sn is also present in sulfides as stannite, stannoidite and kësterite. Other sulfides are pyrrhotite, pyrite, arsenopyrite, galena, sphalerite, marchasite and argentite. Bismuthinite and berndite are found nin trace amounts. Sulfosalts include tetrahedrite, myarhyrite, boulangerite, jamesonite, franckeite, zinckenite, cilindrite and andorite. Associated with the mineralization, several phosphate minerals are found filling cavities and small fractures. The most abundant are monacite (Ce,La,Nd,Th)PO4 and plumbogummite (PbAl3(PO4)2(OH)5•(H2O)). Crandallite CaAl3(PO4)2(OH)5•(H2O) and vivianite (Fe3+(PO4)2•8(H2O)) also

  18. Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition

    SciTech Connect

    Hägglund, Carl; Grehl, Thomas; Brongersma, Hidde H.; Tanskanen, Jukka T.; Mullings, Marja N.; Mackus, Adriaan J. M.; MacIsaac, Callisto; Bent, Stacey Francine; Yee, Ye Sheng; Clemens, Bruce M.

    2016-03-15

    A broad and expanding range of materials can be produced by atomic layer deposition at relatively low temperatures, including both oxides and metals. For many applications of interest, however, it is desirable to grow more tailored and complex materials such as semiconductors with a certain doping, mixed oxides, and metallic alloys. How well such mixed materials can be accomplished with atomic layer deposition requires knowledge of the conditions under which the resulting films will be mixed, solid solutions, or laminated. The growth and lamination of zinc oxide and tin oxide is studied here by means of the extremely surface sensitive technique of low energy ion scattering, combined with bulk composition and thickness determination, and x-ray diffraction. At the low temperatures used for deposition (150 °C), there is little evidence for atomic scale mixing even with the smallest possible bilayer period, and instead a morphology with small ZnO inclusions in a SnO{sub x} matrix is deduced. Postannealing of such laminates above 400 °C however produces a stable surface phase with a 30% increased density. From the surface stoichiometry, this is likely the inverted spinel of zinc stannate, Zn{sub 2}SnO{sub 4}. Annealing to 800 °C results in films containing crystalline Zn{sub 2}SnO{sub 4}, or multilayered films of crystalline ZnO, Zn{sub 2}SnO{sub 4}, and SnO{sub 2} phases, depending on the bilayer period.

  19. Properties of TiN and TiN deposited by CVD on graphite for pyrochemical applications.

    SciTech Connect

    Maiya, P. S.; Moon, B. M.

    1997-12-17

    High-density TiN (>98% of theoretical) has been prepared by hot pressing TiN powder with 2-4 wt.% Li{sub 2}C0{sub 3} at temperatures between 1150-1550 C and pressures of {approx}40-50 MPa. The Li{sub 2}C0{sub 3} served as a fugitive sintering aid, enabling attainment of high density at low temperatures without adversely affecting the inherently good properties. Variation in processing variables and TiN powder characteristics resulted in material with various porosities. Measurement of mechanical properties such as flexural strength and fracture toughness showed that the high-density material has mechanical properties that are superior to those of several oxide ceramics. We have also quantified the effects of porosity on mechanical properties. In addition, adhesion and chemical stability tests were used to investigate graphite coated with TiN by chemical vapor deposition (CVD). Pin-pull tests were used to determine coating adhesion and failure stresses were analyzed by Weibull statistics. All pin-pull tests resulted in fracture of the graphite substrate, rather than separation at the TiN/graphite interface. The data showed a good fit to the two-parameter Weibull expression, with a failure strength of 16.4 MPa and Weibull modulus of 9.3. Both the high-density TiN and the TiN coating on the graphite were exposed to a corrosive molten salt CaCl{sub 2}-7 wt.% CaO and a liquid metal alloy (Zn-10 wt.% Mg) at 800 C for 168 h to determine chemical interactions. No reaction was detected by scanning electron microscopy (SEM) or energy-dispersive X-ray (EDX) analysis. Thus, graphite coated with TiN by CVD combines the thermodynamic stability of TiN when exposed to reactive molten metals and salts, with the excellent machinability of graphite, and hence is promising for use in container vessels for pyrochemical processing of certain rare-earth and nuclear metals, where chemical inertness and good matching of thermal expansion coefficients are required.

  20. Influence of high power impulse magnetron sputtering plasma ionization on the microstructure of TiN thin films

    NASA Astrophysics Data System (ADS)

    Ehiasarian, A. P.; Vetushka, A.; Gonzalvo, Y. Aranda; Sáfrán, G.; Székely, L.; Barna, P. B.

    2011-05-01

    HIPIMS (High Power Impulse Magnetron Sputtering) discharge is a new PVD technology for the deposition of high-quality thin films. The deposition flux contains a high degree of metal ionization and nitrogen dissociation. The microstructure of HIPIMS-deposited nitride films is denser compared to conventional sputter technologies. However, the mechanisms acting on the microstructure, texture and properties have not been discussed in detail so far. In this study, the growth of TiN by HIPIMS of Ti in mixed Ar and N2 atmosphere has been investigated. Varying degrees of metal ionization and nitrogen dissociation were produced by increasing the peak discharge current (Id) from 5 to 30 A. The average power was maintained constant by adjusting the frequency. Mass spectrometry measurements of the deposition flux revealed a high content of ionized film-forming species, such as Ti1+, Ti2+ and atomic nitrogen N1+. Ti1+ ions with energies up to 50 eV were detected during the pulse with reducing energy in the pulse-off times. Langmuir probe measurements showed that the peak plasma density during the pulse was 3 × 1016 m-3. Plasma density, and ion flux ratios of N1+: N21+ and Ti1+: Ti0 increased linearly with peak current. The ratios exceeded 1 at 30 A. TiN films deposited by HIPIMS were analyzed by X-ray diffraction, and transmission electron microscopy. At high Id, N1+: N21+> 1 and Ti1+: Ti0> 1 were produced; a strong 002 texture was present and column boundaries in the films were atomically tight. As Id reduced and N1+: N21+ and Ti1+: Ti0 dropped below 1, the film texture switched to strong 111 with a dense structure. At very low Id, porosity between columns developed. The effects of the significant activation of the deposition flux observed in the HIPIMS discharge on the film texture, microstructure, morphology and properties are discussed.

  1. Effect of thickness on electrical properties of SILAR deposited SnS thin films

    NASA Astrophysics Data System (ADS)

    Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

    2016-03-01

    Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

  2. Deposition of diamondlike carbon films

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Sovey, J. S.; Banks, B. A. (Inventor)

    1984-01-01

    A diamondlike carbon film is deposited in the surface of a substrate by exposing the surface to an argon ion beam containing a hydrocarbon. The current density in the ion beam is low during initial deposition of the film. Subsequent to this initial low current condition, the ion beam is increased to full power. At the same time, a second argon ion beam is directed toward the surface of the substrate. The second ion beam has an energy level much greater than that of the ion beam containing the hydrocarbon. This addition of energy to the system increases mobility of the condensing atoms and serves to remove lesser bound atoms.

  3. Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators

    NASA Astrophysics Data System (ADS)

    Huang, Zhi-Quan; Chou, Bo-Hung; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Liu, Yu-Tzu; Lin, Hsin; Bansil, Arun

    2015-03-01

    Using thickness-dependent first-principles electronic structure calculations, we predict that hydrogenated ultra-thin films of tin harbor a new class of two-dimensional (2D) topological insulators (TIs). A single bilayer (BL) tin film assumes a 2D-TI phase, but it transforms into a trivial insulator after hydrogenation. In contrast, tin films with 2 and 3 BLs are found to be trivial insulators, but hydrogenation of 2 to 4 BL films results in a non-trivial TI phase. For 1 to 3 BLs, H-passivation converts the films from being metallic to insulating. Moreover, we examined iodine-terminated tin films up to 3 BLs, and found these to be non-trivial, with the films becoming semi-metallic beyond 1 BL. In particular, the large band gap of 340 meV in an iodine-terminated tin bilayer is not sustained in the iodine-terminated 2BL and 3BL tin films.

  4. Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators

    NASA Astrophysics Data System (ADS)

    Chou, Bo-Hung; Huang, Zhi-Quan; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Liu, Yu-Tzu; Lin, Hsin; Bansil, Arun

    2014-11-01

    Using thickness-dependent first-principles electronic structure calculations, we predict that hydrogenated ultra-thin films of tin harbor a new class of two-dimensional (2D) topological insulators (TIs). A single bilayer (BL) tin film assumes a 2D-TI phase, but it transforms into a trivial insulator after hydrogenation. In contrast, tin films with 2 and 3 BLs are found to be trivial insulators, but hydrogenation of 2 to 4 BL films results in a non-trivial TI phase. For 1 to 3 BLs, H-passivation converts the films from being metallic to insulating. Moreover, we examined iodine-terminated tin films up to 3 BLs, and found these to be non-trivial, with the films becoming semi-metallic beyond 1 BL. In particular, the large band gap of 340 meV in an iodine-terminated tin BL is not sustained in the iodine-terminated 2 BL and 3 BL tin films.

  5. Indium tin oxide with titanium doping for transparent conductive film application on CIGS solar cells

    NASA Astrophysics Data System (ADS)

    Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Li, Ying-Tse; Huang, Shi-Da; Yu, Hau-Wei; Pu, Nen-Wen; Liang, Shih-Chang

    2015-11-01

    In this study, Ti-doped indium tin oxide (ITO:Ti) thin films were fabricated using a DC-magnetron sputtering deposition method. The thin films were grown without introducing oxygen or heating the substrate, and no post-growth annealing was performed after fabrication. The thickness of the ITO:Ti thin films (350 nm) was controlled while increasing the sputtering power from 50 to 150 W. According to the results, the optimal optoelectronic properties were observed in ITO:Ti thin films grown at a sputtering power of 100 W, yielding a reduced resistivity of 3.2 × 10-4 Ω-cm and a mean high transmittance of 83% at wavelengths ranging from 400 to 800 nm. The optimal ITO:Ti thin films were used to fabricate a Cu(In,Ga)Se2 solar cell that exhibited a photoelectric conversion efficiency of 11.3%, a short-circuit current density of 33.1 mA/cm2, an open-circuit voltage of 0.54 V, and a fill factor of 0.64.

  6. Mesoporous tin-doped indium oxide thin films: effect of mesostructure on electrical conductivity

    NASA Astrophysics Data System (ADS)

    von Graberg, Till; Hartmann, Pascal; Rein, Alexander; Gross, Silvia; Seelandt, Britta; Röger, Cornelia; Zieba, Roman; Traut, Alexander; Wark, Michael; Janek, Jürgen; Smarsly, Bernd M.

    2011-03-01

    We present a versatile method for the preparation of mesoporous tin-doped indium oxide (ITO) thin films via dip-coating. Two poly(isobutylene)-b-poly(ethyleneoxide) (PIB-PEO) copolymers of significantly different molecular weight (denoted as PIB-PEO 3000 and PIB-PEO 20000) are used as templates and are compared with non-templated films to clarify the effect of the template size on the crystallization and, thus, on the electrochemical properties of mesoporous ITO films. Transparent, mesoporous, conductive coatings are obtained after annealing at 500 °C these coatings have a specific resistance of 0.5 Ω cm at a thickness of about 100 nm. Electrical conductivity is improved by one order of magnitude by annealing under a reducing atmosphere. The two types of PIB-PEO block copolymers create mesopores with in-plane diameters of 20-25 and 35-45 nm, the latter also possessing correspondingly thicker pore walls. Impedance measurements reveal that the conductivity is significantly higher for films prepared with the template generating larger mesopores. Because of the same size of the primary nanoparticles, the enhanced conductivity is attributed to a higher conduction path cross section. Prussian blue was deposited electrochemically within the films, thus confirming the accessibility of their pores and their functionality as electrode material.

  7. Thermally evaporated methylammonium tin triiodide thin films for lead-free perovskite solar cell fabrication

    SciTech Connect

    Yu, Yue; Zhao, Dewei; Grice, Corey R.; Meng, Weiwei; Wang, Changlei; Liao, Weiqiang; Cimaroli, Alexander J.; Zhang, Hongmei; Zhu, Kai; Yan, Yanfa

    2016-01-01

    We report on the synthesis of methylammonium tin triiodide (MASnI3) thin films at room temperature by a hybrid thermal evaporation method and their application in fabricating lead (Pb)-free perovskite solar cells. The as-deposited MASnI3 thin films exhibit smooth surfaces, uniform coverage across the entire substrate, and strong crystallographic preferred orientation along the <100> direction. By incorporating this film with an inverted planar device architecture, our Pb-free perovskite solar cells are able to achieve an open-circuit voltage (Voc) up to 494 mV. The relatively high Voc is mainly ascribed to the excellent surface coverage, the compact morphology, the good stoichiometry control of the MASnI3 thin films, and the effective passivation of the electron-blocking and hole-blocking layers. Our results demonstrate the potential capability of the hybrid evaporation method to prepare high-quality Pb-free MASnI3 perovskite thin films which can be used to fabricate efficient Pb-free perovskite solar cells.

  8. Magnetron deposited TiN coatings for protection of Al-Cu-Ag-Mg-Mn alloy

    NASA Astrophysics Data System (ADS)

    Stepanova, Tatiana V.; Kaziev, Andrey V.; Atamanov, Mikhail V.; Tumarkin, Alexander V.; Dolzhikova, Svetlana A.; Izmailova, Nelly Ph; Kharkov, Maxim M.; Berdnikova, Maria M.; Mozgrin, Dmitry V.; Pisarev, Alexander A.

    2016-09-01

    TiN coatings were deposited on a new Al super-alloy by magnetron sputtering in argon/nitrogen environment. The deposited layer structure, microhardness, adhesion, corrosion resistance, and fatigue life were investigated and tests demonstrated improved performance of the alloy.

  9. Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

    NASA Astrophysics Data System (ADS)

    Li, Yali; Li, Chunyang; He, Deyan; Li, Junshuai

    2009-05-01

    We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of ~4.6 × 10-4 Ω cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of ~1.21 × 1021 cm-3 and a lower mobility of ~11.4 cm2 V-1 s-1. More interestingly, these electrical characteristics result in the semiconductor-metal conductivity transition around room temperature for the ITO films prepared by APA.

  10. 3D indium tin oxide electrodes by ultrasonic spray deposition for current collection applications

    NASA Astrophysics Data System (ADS)

    van den Ham, E. J.; Elen, K.; Bonneux, G.; Maino, G.; Notten, P. H. L.; Van Bael, M. K.; Hardy, A.

    2017-04-01

    Three dimensionally (3D) structured indium tin oxide (ITO) thin films are synthesized and characterized as a 3D electrode material for current collection applications. Using metal citrate chemistry in combination with ultrasonic spray deposition, a low cost wet-chemical method has been developed to achieve conformal ITO coatings on non-planar scaffolds. Although there is room for improvement with respect to the resistivity (9.9·10-3 Ω•cm, 220 nm thick planar films), high quality 3D structured coatings were shown to exhibit conductive properties based on ferrocene reactivity. In view of applications in Li-ion batteries, the electrochemical stability of the current collector was investigated, indicating that stability is guaranteed for voltages of 1.5 V and up (vs. Li+/Li). In addition, subsequent 3D coating of the ITO with WO3 as a negative electrode (battery) material confirmed the 3D ITO layer functions as a proper current collector. Using this approach, an over 4-fold capacity increase was booked for 3D structured WO3 in comparison to planar samples, confirming the current collecting capabilities of the 3D ITO coating. Therefore, the 3D ITO presented is considered as a highly interesting material for 3D battery applications and beyond.

  11. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc; McCall, Briana; Alston, Robert; Collis, Ward; Iyer, Shanthi

    2015-10-01

    With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of -3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V-1s-1, and sub-threshold swing of 0.38 V dec-1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

  12. Electrophoretic deposition of tannic acid-polypyrrolidone films and composites.

    PubMed

    Luo, Dan; Zhang, Tianshi; Zhitomirsky, Igor

    2016-05-01

    Thin films of polyvinylpyrrolidone (PVP)-tannic acid (TA) complexes were prepared by a conceptually new strategy, based on electrophoretic deposition (EPD). Proof of concept investigations involved the analysis of the deposition yield, FTIR and UV-vis spectroscopy of the deposited material, and electron microscopy studies. The analysis of the deposition mechanism indicated that the limitations of the EPD in the deposition of small phenolic molecules, such as TA, and electrically neutral polymers, similar to PVP, containing hydrogen-accepting carbonyl groups, can be avoided. The remarkable adsorption properties of TA and film forming properties of the PVP-TA complexes allowed for the EPD of materials of different types, such as huntite mineral platelets and hydrotalcite clay particles, TiO2 and MnO2 oxide nanoparticles, multiwalled carbon nanotubes, TiN and Pd nanoparticles. Moreover, PVP-TA complexes were used for the co-deposition of different materials and formation of composite films. In another approach, TA was used as a capping agent for the hydrothermal synthesis of ZnO nanorods, which were then deposited by EPD using PVP-TA complexes. The fundamental adsorption and interaction mechanisms of TA involved chelation of metal atoms on particle surfaces with galloyl groups, π-π interactions and hydrogen bonding. The films prepared by EPD can be used for various applications, utilizing functional properties of TA, PVP, inorganic and organic materials of different types and their composites.

  13. Growth of YBCO Thin Films on TiN(001) and CeO2-Coated TiN Surfaces

    DTIC Science & Technology

    2012-02-01

    substrates. Thin CeO2 (~200 nm thick) and YBCO (~300 nm thick) layers were grown on TiN-coated MgO substrates, using pulsed laser deposition. While YBCO ...and YBCO (300 nm thick) layers were grown on TiN-coated MgO substrates, using pulsed laser deposition. While YBCO grown directly on TiN was of poor...grown on the TiN-coated MgO and then an 300 nm thick YBCO layers was subsequently depos- ited. For other samples, YBCO deposition directly on the

  14. Tin oxide dependence of the CO2 reduction efficiency on tin electrodes and enhanced activity for tin/tin oxide thin-film catalysts.

    PubMed

    Chen, Yihong; Kanan, Matthew W

    2012-02-01

    The importance of tin oxide (SnO(x)) to the efficiency of CO(2) reduction on Sn was evaluated by comparing the activity of Sn electrodes that had been subjected to different pre-electrolysis treatments. In aqueous NaHCO(3) solution saturated with CO(2), a Sn electrode with a native SnO(x) layer exhibited potential-dependent CO(2) reduction activity consistent with previously reported activity. In contrast, an electrode etched to expose fresh Sn(0) surface exhibited higher overall current densities but almost exclusive H(2) evolution over the entire 0.5 V range of potentials examined. Subsequently, a thin-film catalyst was prepared by simultaneous electrodeposition of Sn(0) and SnO(x) on a Ti electrode. This catalyst exhibited up to 8-fold higher partial current density and 4-fold higher faradaic efficiency for CO(2) reduction than a Sn electrode with a native SnO(x) layer. Our results implicate the participation of SnO(x) in the CO(2) reduction pathway on Sn electrodes and suggest that metal/metal oxide composite materials are promising catalysts for sustainable fuel synthesis.

  15. Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

    PubMed Central

    Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

    2016-01-01

    In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O2/Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (Ioff) of 3 pA, a high on/off current ratio of 2 × 107, a high saturation mobility (μsat) of 66.7 cm2/V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (Vth) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays. PMID:27941915

  16. Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

    NASA Astrophysics Data System (ADS)

    Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

    2016-12-01

    In this work, we have successfully fabricated bottom gate fully transparent tin-doped zinc oxide thin film transistors (TZO TFTs) fabricated on flexible plastic substrate at low temperature by RF magnetron sputtering. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated, and we found that the O2/Ar gas flow ratio have a great influence on the electrical properties. TZO TFTs on flexible substrate has very nice electrical characteristics with a low off-state current (Ioff) of 3 pA, a high on/off current ratio of 2 × 107, a high saturation mobility (μsat) of 66.7 cm2/V•s, a steep subthreshold slope (SS) of 333 mV/decade and a threshold voltage (Vth) of 1.2 V. Root-Mean-Square (RMS) roughness of TZO thin film is about 0.52 nm. The transmittance of TZO thin film is about 98%. These results highlight that the excellent device performance can be realized in TZO film and TZO TFT can be a promising candidate for flexible displays.

  17. Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm

    NASA Astrophysics Data System (ADS)

    Wang, Haifeng; Huang, Zhimeng; Zhang, Dayong; Luo, Fei; Huang, Lixian; Li, Yanglong; Luo, Yongquan; Wang, Weiping; Zhao, Xiangjie

    2011-12-01

    Laser-induced-damage characteristics of commercial indium-tin oxide (ITO) films deposited by DC magnetron sputtering deposition on K9 glass substrates as a function of the film thickness have been studied at 1064 nm with a 10 ns laser pulse in the 1-on-1 mode, and the various mechanisms for thickness effect on laser-induced-damage threshold (LIDT) of the film have been discussed in detail. It is observed that laser-damage-resistance of ITO film shows dramatic thickness effect with the LIDT of the 50-nm ITO film 7.6 times as large as the value of 300 nm film, and the effect of depressed carrier density by decreasing the film thickness is demonstrated to be the primary reason. Our experiment findings indicate that searching transparent conductive oxide (TCO) film with low carrier density and high carrier mobility is an efficient technique to improve the laser-damage-resistance of TCO films based on maintaining their well electric conductivity.

  18. Structure and mechanical properties of Ti-Si-N films deposited by combined DC/RF reactive unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ding, X. Z.; Zeng, X. T.; Liu, Y. C.; Yang, Q.; Zhao, L. R.

    2004-11-01

    Ti-Si-N nanocomposite films with Si content between 0 and 13.5 at. % were deposited by combined DC/RF reactive unbalanced magnetron sputtering. The composition, structure, and mechanical properties of the as-deposited Ti-Si-N films were measured by energy dispersive analysis of x rays, x-ray diffraction (XRD), and nanoindentation experiments, respectively. All of the Ti-Si-N films exhibited a higher hardness than pure TiN films deposited under similar conditions. The highest hardness (~41 GPa) was obtained in the film with Si content of about 8 at. %. Ti-Si-N films also exhibited a higher resistance to plastic deformation (i.e., higher ratio H3/E*2) than pure TiN. XRD patterns revealed that the as-deposited films were composed of cubic TiN crystallites with a preferential orientation of (111). With increase of RF power applied to the Si targets, the TiN (111) peak intensity or TiN crystallite size increased in the lower RF power range but decreased in the higher RF power range, showing a maximum at an RF power of 500 W (power density ~1.14 W/cm2), corresponding to a Si content of about 5 at. % in the film.

  19. Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

    SciTech Connect

    Jagannadham, Kasichainula

    2015-05-15

    Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr{sub 2}N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W{sub 2}N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W{sub 2}N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films.

  20. The effects of deposition temperature on the interfacial properties of SiH4 reduced blanket tungsten on TiN glue layer

    NASA Astrophysics Data System (ADS)

    Lee, Young J.; Park, Chong-Ook; Kim, Dong-Won; Chun, John S.

    1994-10-01

    Low pressure chemical vapor deposition tungsten films were deposited at various temperatures, using a WF6-SiH4-H2 gas mixture. The impurity distribution at the W/TiN interface was investigated by Auger electron spectroscopy depth profiling. Some fluorine accumulation at the interface is observed when the tungsten is deposited below 300°C. However, above 300°C, no accumulation of fluorine could be observed. A result obtained from thermodynamic calculations using SOLGASMIX-PV suggests that this phenomenon is closely associated with the highly oxidized surface layer of TiN at the initial stage of deposition. The reaction of the gas mixture with the TiN surface layer seems to enhance the fluorine accumulation, which lowers the adherence of the interface and increases the contact resistance.

  1. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  2. Surface and optical properties of indium tin oxide layer deposition by RF magnetron sputtering in argon atmosphere

    NASA Astrophysics Data System (ADS)

    Yudar, H. Hakan; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan; Pat, Suat

    2016-08-01

    This study focused on the characterization and properties of transparent and conductive indium tin oxide (ITO) thin films deposited in argon atmosphere. ITO thin films were coated onto glass substrates by radio frequency (RF) magnetron sputtering technique at 75 and 100 W RF powers. Structural characteristics of producing films were investigated through X-ray diffraction analysis. UV-Vis spectrophotometer and interferometer were used to determine transmittance, absorbance and reflectance values of samples. The surface morphology of the films was characterized by atomic force microscope. The calculated band gaps were 3.8 and 4.1 eV for the films at 75 and 100 W, respectively. The effect of RF power on crystallinity of prepared films was explored using mentioned analysis methods. The high RF power caused higher poly crystallinity in the produced samples. The thickness and refractive index values for all samples increased respect to an increment of RF power and were calculated as 20, 50 nm and 1.71, 1.86 for samples at 75 and 100 W, respectively. Finally, the estimated grain sizes for all prepared films decreased with increasing of 2 θ degrees, and the number of crystallite per unit volume was calculated. It was found that nearly all properties including sheet resistance and resistivity depend on the RF power.

  3. Physical Characterization and Effect of Effective Surface Area on the Sensing Properties of Tin Dioxide Thin Solid Films in a Propane Atmosphere

    PubMed Central

    Gómez-Pozos, Heberto; González-Vidal, José Luis; Torres, Gonzalo Alberto; de la Luz Olvera, María; Castañeda, Luis

    2014-01-01

    The physical properties and the effect of effective surface area (ESA) on the sensing properties of tin dioxide [SnO2] thin films in air and propane [C3H8] atmosphere as a function of operating temperature and gas concentration have been studied in this paper. SnO2 thin films with different estimated thicknesses (50, 100 and 200 nm) were deposited on glass substrates by the chemical spray technique. Besides, they were prepared at two different deposition temperatures (400 and 475 °C). Tin chloride [SnCl4 · 5H2O] with 0.2 M concentration value and ethanol [C2H6O] were used as tin precursor and solvent, respectively. The morphological, and structural properties of the as-prepared films were analyzed by AFM and XRD, respectively. Gas sensing characteristics of SnO2 thin solid films were measured at operating temperatures of 22, 100, 200, and 300 °C, and at propane concentration levels (0, 5, 50, 100, 200, 300, 400, and 500 ppm). ESA values were calculated for each sample. It was found that the ESA increased with the increasing thickness of the films. The results demonstrated the importance of the achieving of a large effective surface area for improving gas sensing performance. SnO2 thin films deposited by spray chemical were chosen to study the ESA effect on gas sensing properties because their very rough surfaces were appropriate for this application. PMID:24379046

  4. Experiments on In2S3:Sn Thin Films with up to 1% Tin Content

    NASA Astrophysics Data System (ADS)

    Kraini, M.; Bouguila, N.; Koaib, J.; Vázquez-Vázquez, C.; López-Quintela, M. A.; Alaya, S.

    2016-11-01

    Tin-doped indium sulfide (In2S3:Sn) thin films with different Sn:In molar ratios (0% to 1% by mol in solution) have been deposited on glass substrates by a chemical spray pyrolysis method. The films were investigated by x-ray diffraction analysis, optical absorption, Raman, and photoluminescence spectroscopies, field-emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, and atomic force microscopy. The structural properties revealed that the In2S3:Sn thin films had polycrystalline cubic structure with average crystallite size increasing from 16.3 nm to 25.5 nm. The surface morphology of the films was continuous and crack free. The average and root-mean-square roughness increased from 13.12 nm to 31.65 nm and from 16.14 nm to 39.39 nm, respectively, with increasing Sn:In molar ratio. Raman studies revealed the presence of vibration modes related to In2S3 phase, with no signature of secondary phases. The transmission coefficient was about 65% to 70% in the visible region and 70% to 90% in the near-infrared region. The optical bandgap values for allowed direct transitions in In2S3:Sn were found to lie in the range from 2.68 eV to 2.80 eV. The refractive index of the In2S3:Sn thin films decreased from 2.45 to 2.37 while the k values lay in the range from 0.02 to 0.25 for all wavelengths. Defect-related photoluminescence properties are also discussed. These In2S3:Sn films are promising candidates for use in optoelectronic and photovoltaic devices.

  5. Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

    SciTech Connect

    An, Hongyu; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji; Wang, Jian; Szivos, Janos; Safran, Gyorgy

    2015-11-28

    The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N{sub 2} into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L1{sub 0} ordering transformation of CoPt.

  6. Electrodeposition and characterisation of lead tin superconducting films for application in heavy ion booster

    NASA Astrophysics Data System (ADS)

    Lobanov, Nikolai R.

    2015-12-01

    The ANU has developed experimental systems and procedures for lead-tin (PbSn) film deposition and characterisation. The 12 split loop resonators have been electroplated with 96%Pb4%Sn film to the final thickness of 1.5 micron using methanesulfonic acid (MSA) chemistry. As a result, an average acceleration field of 3.6 MV/m off-line at 6 W rf power was achieved at extremely low technological cost. Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Heavy Ion Elastic Detection Analyses (HIERDA), Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS) and Electron Backscattering Diffraction (EBSD) revealed correlation between the substrate and film structure, morphology and the rf performance of the cavity. The PbSn plating, exercised on the existing split loop resonators (SLR), has been extended to the two stub quarter wave resonator (QWR) as a straightforward step to quickly explore the superconducting performance of the new geometry. The oxygen free copper (OHFC) substrate for two stub QWR was prepared by reverse pulse electropolishing. The ultimate superconducting properties and long-term stability of the coatings have been assessed by operation of the ANU superconducting linac over the last few years.

  7. Deposition of magnetoelectric hexaferrite thin films on substrates of silicon

    NASA Astrophysics Data System (ADS)

    Zare, Saba; Izadkhah, Hessam; Vittoria, Carmine

    2016-12-01

    Magnetoelectric M-type hexaferrite thin films (SrCo2Ti2Fe8O19) were deposited using Pulsed Laser Deposition (PLD) technique on Silicon substrate. A conductive oxide layer of Indium-Tin Oxide (ITO) was deposited as a buffer layer with the dual purposes of 1) to reduce lattice mismatch between the film and silicon and 2) to lower applied voltages to observe magnetoelectric effects at room temperature on Silicon based devices. The film exhibited magnetoelectric effects as confirmed by vibrating sample magnetometer (VSM) techniques in voltages as low as 0.5 V. Without the oxide conductive layer the required voltages to observe magnetoelectric effects was typically about 1000 times larger. The magnetoelectric thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance techniques. We measured saturation magnetization of 650 G, and coercive field of about 150 Oe for these thin films. The change in remanence magnetization was measured in the presence of DC voltages and the changes in remanence were in the order of 15% with the application of only 0.5 V (DC voltage). We deduced a magnetoelectric coupling, α, of 1.36×10-9 s m-1 in SrCo2Ti2Fe8O19 thin films.

  8. Microstructural characteristics of tin oxide-based thin films on (0001) Al2O3 substrates: effects of substrate temperature and RF power during co-sputtering.

    PubMed

    Hwang, Sooyeon; Lee, Ju Ho; Kim, Young Yi; Yun, Myeong Goo; Lee, Kwan-Hun; Lee, Jeong Yong; Cho, Hyung Koun

    2014-12-01

    While tin oxides such as SnO and SnO2 are widely used in various applications, surprisingly, only a limited number of reports have been presented on the microstructural characteristics of tin oxide thin films grown under various growth conditions. In this paper, the effects of the substrate temperature and content of foreign Zn ion on the microstructural characteristics of tin oxide thin films grown by radio-frequency magnetron sputtering were investigated. The increase in substrate temperature induced change in the stoichiometry of the thin films from SnO(1+x) to SnO(2-x). Additionally, the phase contrast in the transmission electron microscopy image revealed that SnO(1+x) and SnO(2-x) phases were alternating in thin films and the width of each phase became narrower at high substrate temperature. The ternary zinc tin oxide thin films were deposited using the co-sputtering method. As the ZnO target power increased, the crystallinity of the thin films became poly-crystalline, and then showed improved crystallinity again with two types of phases.

  9. Reversible wettability of electron-beam deposited indium-tin-oxide driven by ns-UV irradiation

    SciTech Connect

    Persano, Luana; Del Carro, Pompilio; Pisignano, Dario

    2012-04-09

    Indium tin oxide (ITO) is one of the most widely used semiconductor oxides in the field of organic optoelectronics, especially for the realization of anode contacts. Here the authors report on the control of the wettability properties of ITO films deposited by reactive electron beam deposition and irradiated by means of nanosecond-pulsed UV irradiation. The enhancement of the surface water wettability, with a reduction of the water contact angle larger than 50 deg., is achieved by few tens of seconds of irradiation. The analyzed photo-induced wettability change is fully reversible in agreement with a surface-defect model, and it can be exploited to realize optically transparent, conductive surfaces with controllable wetting properties for sensors and microfluidic circuits.

  10. Electrochemical deposition of conductive and adhesive polypyrrole-dopamine films

    NASA Astrophysics Data System (ADS)

    Kim, Semin; Jang, Lindy K.; Park, Hyun S.; Lee, Jae Young

    2016-07-01

    Electrode surfaces have been widely modified with electrically conductive polymers, including polypyrrole (PPY), to improve the performance of electrodes. To utilize conductive polymers for electrode modification, strong adhesion between the polymer films and electrode substrates should be ensured with high electrical/electrochemical activities. In this study, PPY films were electrochemically polymerized on electrodes (e.g., indium tin oxide (ITO)) with dopamine as a bio-inspired adhesive molecule. Efficient and fast PPY electrodeposition with dopamine (PDA/PPY) was found; the resultant PDA/PPY films exhibited greatly increased adhesion strengths of up to 3.7 ± 0.8 MPa and the modified electrodes had electrochemical impedances two to three orders of magnitude lower than that of an unmodified electrode. This electrochemical deposition of adhesive and conductive PDA/PPY offers a facile and versatile electrode modification for various applications, such as biosensors and batteries.

  11. Electrochemical deposition of conductive and adhesive polypyrrole-dopamine films.

    PubMed

    Kim, Semin; Jang, Lindy K; Park, Hyun S; Lee, Jae Young

    2016-07-27

    Electrode surfaces have been widely modified with electrically conductive polymers, including polypyrrole (PPY), to improve the performance of electrodes. To utilize conductive polymers for electrode modification, strong adhesion between the polymer films and electrode substrates should be ensured with high electrical/electrochemical activities. In this study, PPY films were electrochemically polymerized on electrodes (e.g., indium tin oxide (ITO)) with dopamine as a bio-inspired adhesive molecule. Efficient and fast PPY electrodeposition with dopamine (PDA/PPY) was found; the resultant PDA/PPY films exhibited greatly increased adhesion strengths of up to 3.7 ± 0.8 MPa and the modified electrodes had electrochemical impedances two to three orders of magnitude lower than that of an unmodified electrode. This electrochemical deposition of adhesive and conductive PDA/PPY offers a facile and versatile electrode modification for various applications, such as biosensors and batteries.

  12. Electrochemical deposition of conductive and adhesive polypyrrole-dopamine films

    PubMed Central

    Kim, Semin; Jang, Lindy K.; Park, Hyun S.; Lee, Jae Young

    2016-01-01

    Electrode surfaces have been widely modified with electrically conductive polymers, including polypyrrole (PPY), to improve the performance of electrodes. To utilize conductive polymers for electrode modification, strong adhesion between the polymer films and electrode substrates should be ensured with high electrical/electrochemical activities. In this study, PPY films were electrochemically polymerized on electrodes (e.g., indium tin oxide (ITO)) with dopamine as a bio-inspired adhesive molecule. Efficient and fast PPY electrodeposition with dopamine (PDA/PPY) was found; the resultant PDA/PPY films exhibited greatly increased adhesion strengths of up to 3.7 ± 0.8 MPa and the modified electrodes had electrochemical impedances two to three orders of magnitude lower than that of an unmodified electrode. This electrochemical deposition of adhesive and conductive PDA/PPY offers a facile and versatile electrode modification for various applications, such as biosensors and batteries. PMID:27459901

  13. High Temperature - Thin Film Strain Gages Based on Alloys of Indium Tin Oxide

    NASA Technical Reports Server (NTRS)

    Gregory, Otto J.; Cooke, James D.; Bienkiewicz, Joseph M.

    1998-01-01

    A stable, high temperature strain gage based on reactively sputtered indium tin oxide (ITO) was demonstrated at temperatures up to 1050 C. These strain sensors exhibited relatively large, negative gage factors at room temperature and their piezoresistive response was both linear and reproducible when strained up to 700 micro-in/in. When cycled between compression and tension, these sensors also showed very little hysteresis, indicating excellent mechanical stability. Thin film strain gages based on selected ITO alloys withstood more than 50,000 strain cycles of +/- 500 micro-in/in during 180 hours of testing in air at 1000 C, with minimal drift at temperature. Drift rates as low as 0.0009%/hr at 1000 C were observed for ITO films that were annealed in nitrogen at 700 C prior to strain testing. These results compare favorably with state of the art 10 micro-m thick PdCr films deposited by NASA, where drift rates of 0.047%/hr at 1050 C were observed. Nitrogen annealing not only produced the lowest drift rates to date, but also produce the largest dynamic gage factors (G = 23.5). These wide bandgap, semiconductor strain sensors also exhibited moderately low temperature coefficients of resistance (TCR) at temperatures up to 1100 C, when tested in a nitrogen ambient. A TCR of +230 ppm/C over the temperature range 200 C < T < 500 C and a TCR of -469 ppm/C over the temperature range 600 C < T < 1100 C was observed for the films tested in nitrogen. However, the resistivity behavior changed considerably when the same films were tested in oxygen ambients. A TCR of -1560 ppm/C was obtained over the temperature range of 200 C < T < 1100 C. When similar films were protected with an overcoat or when ITO films were prepared with higher oxygen contents in the plasma, two distinct TCR's were observed. At T < 800 C, a linear TCR of -210 ppm/C was observed and at T > 800 C, a linear TCR of -2170 DDm/C was observed. The combination of a moderately low TCR and a relatively large gage

  14. Low temperature atmospheric pressure chemical vapor deposition of group 14 oxide films

    SciTech Connect

    Hoffman, D.M.; Atagi, L.M. |; Chu, Wei-Kan; Liu, Jia-Rui; Zheng, Zongshuang; Rubiano, R.R.; Springer, R.W.; Smith, D.C.

    1994-06-01

    Depositions of high quality SiO{sub 2} and SnO{sub 2} films from the reaction of homoleptic amido precursors M(NMe{sub 2})4 (M = Si,Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 {plus_minus} 5 atom %. They are deposited with growth rates from 380 to 900 {angstrom}/min. The refractive indexes of the SiO{sub 2} films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm{sup {minus}1}. X-Ray diffraction studies reveal that the SiO{sub 2} film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO{sub 2} films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10{sup {minus}2} to 10{sup {minus}3} {Omega}cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.

  15. Pulsed Nd-YAG laser deposition of TiN and TiAlN coating

    NASA Astrophysics Data System (ADS)

    Kathuria, Y. P.; Uchida, Yoshiyuki

    This paper demonstrates the feasibility of generating a thin clad coating of TiN and TiAlN on SS304 base material by using the pulsed Nd-YAG laser. In the experiment TiN based coating was created with and without the addition of Al-powder. In the post processing, a precision grinder was employed to smoothen the top surface. SEM, XRD and EDS analysis were employed to study the surface topography etc. Microhardness mapping was performed at various points across the surface. The results show the average microhardness of the coating deposited with TiN is lower (1035 HV) than that of using Al-mixed powder (1264 HV).

  16. Chemical-Vapor-Deposited Diamond Film

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    This chapter describes the nature of clean and contaminated diamond surfaces, Chemical-vapor-deposited (CVD) diamond film deposition technology, analytical techniques and the results of research on CVD diamond films, and the general properties of CVD diamond films. Further, it describes the friction and wear properties of CVD diamond films in the atmosphere, in a controlled nitrogen environment, and in an ultra-high-vacuum environment.

  17. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping.

  18. Influence of high power impulse magnetron sputtering plasma ionization on the microstructure of TiN thin films

    SciTech Connect

    Ehiasarian, A. P.; Vetushka, A.; Gonzalvo, Y. Aranda; Safran, G.; Szekely, L.; Barna, P. B.

    2011-05-15

    HIPIMS (High Power Impulse Magnetron Sputtering) discharge is a new PVD technology for the deposition of high-quality thin films. The deposition flux contains a high degree of metal ionization and nitrogen dissociation. The microstructure of HIPIMS-deposited nitride films is denser compared to conventional sputter technologies. However, the mechanisms acting on the microstructure, texture and properties have not been discussed in detail so far. In this study, the growth of TiN by HIPIMS of Ti in mixed Ar and N{sub 2} atmosphere has been investigated. Varying degrees of metal ionization and nitrogen dissociation were produced by increasing the peak discharge current (I{sub d}) from 5 to 30 A. The average power was maintained constant by adjusting the frequency. Mass spectrometry measurements of the deposition flux revealed a high content of ionized film-forming species, such as Ti{sup 1+}, Ti{sup 2+} and atomic nitrogen N{sup 1+}. Ti{sup 1+} ions with energies up to 50 eV were detected during the pulse with reducing energy in the pulse-off times. Langmuir probe measurements showed that the peak plasma density during the pulse was 3 x 10{sup 16} m{sup -3}. Plasma density, and ion flux ratios of N{sup 1+}: N{sub 2}{sup 1+} and Ti{sup 1+}: Ti{sup 0} increased linearly with peak current. The ratios exceeded 1 at 30 A. TiN films deposited by HIPIMS were analyzed by X-ray diffraction, and transmission electron microscopy. At high I{sub d}, N{sup 1+}: N{sub 2}{sup 1+} > 1 and Ti{sup 1+}: Ti{sup 0} > 1 were produced; a strong 002 texture was present and column boundaries in the films were atomically tight. As I{sub d} reduced and N{sup 1+}: N{sub 2}{sup 1+} and Ti{sup 1+}: Ti{sup 0} dropped below 1, the film texture switched to strong 111 with a dense structure. At very low I{sub d}, porosity between columns developed. The effects of the significant activation of the deposition flux observed in the HIPIMS discharge on the film texture, microstructure, morphology and

  19. Properties of Hydrogen Sulfide Sensors Based on Thin Films of Tin Dioxide and Tungsten Trioxide

    NASA Astrophysics Data System (ADS)

    Sevastianov, E. Yu.; Maksimova, N. K.; Chernikov, E. V.; Sergeichenko, N. V.; Rudov, F. V.

    2016-12-01

    The effect of hydrogen sulfide in the concentration range of 0-100 ppm on the characteristics of thin films of tin dioxide and tungsten trioxide obtained by the methods of magnetron deposition and modified with gold in the bulk and on the surface is studied. The impurities of antimony and nickel have been additionally introduced into the SnO2 bulk. An optimal operating temperature of sensors 350°C was determined, at which there is a satisfactory correlation between the values of the response to H2S and the response time. Degradation of the sensor characteristics is investigated in the long-term ( 0.5-1.5 years) tests at operating temperature and periodic exposure to hydrogen sulfide, as well as after conservation of samples in the laboratory air. It is shown that for the fabrication of H2S sensors, the most promising are thin nanocrystalline Au/WO3:Au films characterized by a linear concentration dependence of the response and high stability of parameters during exploitation.

  20. Structural characterization and electronic structure of laser treated TiN thin film

    SciTech Connect

    Soni, Sheetal; Nair, K. G. M.; Phase, D. M.; Gupta, Ratnesh

    2012-06-05

    TiN thin films prepared by laser treatment using Kr-F excimer laser in the controlled atmosphere. The depth distribution and composition of nitrogen and contaminated oxygen have been determined by non-Rutherford proton backscattering using 1.7 MeV Tendetron accelerator. The electronic structure of TiN thin film have been characterized by resonant photoelectron spectroscopy using indus-I synchrotron radiation. Specifically, complex resonance profile that shows the enhancement at 45 eV which is consistent with the resonant photoemission of Ti 3d states involved in the Titanium nitride and oxide.

  1. Carbon nanohoops as attractive toughening and lubricant agents in TiN porous films

    NASA Astrophysics Data System (ADS)

    Zheng, Jianyun; Ren, Xiaodong; Hao, Junying; Li, Ang; Liu, Weimin

    2017-01-01

    Hoop-shaped conjugated macrocycles (or carbon nanohoops) are eliciting significant interest from theoretical and synthetic scientists on account of their eminent physical and chemical properties. Herein, carbon nanohoops firstly fabricated by CH4 plasma treatment serve as toughening and lubricant agents in TiN porous films. The formation mechanism of carbon nanohoops is explained through a tandem Suzuki coupling/macrocyclization sequence of the charged multiple hydrocarbon molecules. The essential features of carbon nanohoops ensure that the TiN porous films with carbon nanohoops successfully possess flexible, hard, lubricant and antiwear effects.

  2. Structural characterization and electronic structure of laser treated TiN thin film

    NASA Astrophysics Data System (ADS)

    Soni, Sheetal; Nair, K. G. M.; Phase, D. M.; Gupta, Ratnesh

    2012-06-01

    TiN thin films prepared by laser treatment using Kr-F excimer laser in the controlled atmosphere. The depth distribution and composition of nitrogen and contaminated oxygen have been determined by non-Rutherford proton backscattering using 1.7 MeV Tendetron accelerator. The electronic structure of TiN thin film have been characterized by resonant photoelectron spectroscopy using indus-I synchrotron radiation. Specifically, complex resonance profile that shows the enhancement at 45 eV which is consistent with the resonant photoemission of Ti 3d states involved in the Titanium nitride and oxide.

  3. Tin-tungsten mineralizing processes in tungsten vein deposits: Panasqueira, Portugal

    NASA Astrophysics Data System (ADS)

    Lecumberri-Sanchez, P.; Pinto, F.; Vieira, R.; Wälle, M.; Heinrich, C. A.

    2015-12-01

    Tungsten has a high heat resistance, density and hardness, which makes it widely applied in industry (e.g. steel, tungsten carbides). Tungsten deposits are typically magmatic-hydrothermal systems. Despite the economic significance of tungsten, there are no modern quantitative analytical studies of the fluids responsible for the formation of its highest-grade deposit type (tungsten vein deposits). Panasqueira (Portugal) is a tungsten vein deposit, one of the leading tungsten producers in Europe and one of the best geologically characterized tungsten vein deposits. In this study, compositions of the mineralizing fluids at Panasqueira have been determined through combination of detailed petrography, microthermometric measurements and LA-ICPMS analyses, and geochemical modeling has been used to determine the processes that lead to tungsten mineralization. We characterized the fluids related to the various mineralizing stages in the system: the oxide stage (tin and tungsten mineralization), the sulfide stage (chalcopyrite and sphalerite mineralization) and the carbonate stage. Thus, our results provide information on the properties of fluids related with specific paragenetic stages. Furthermore we used those fluid compositions in combination with host rock mineralogy and chemistry to evaluate which are the controlling factors in the mineralizing process. This study provides the first quantitative analytical data on fluid composition for tungsten vein deposits and evaluates the controlling mineralization processes helping to determine the mechanisms of formation of the Panasqueira tin-tungsten deposit and providing additional geochemical constraints on the local distribution of mineralization.

  4. Room temperature crystallization of indium tin oxide films on glass and polyethylene terephthalate substrates using rf plasma

    SciTech Connect

    Ohsaki, H.; Suzuki, M.; Shibayama, Y.; Kinbara, A.; Watanabe, T.

    2007-07-15

    The crystallization of amorphous indium tin oxide (ITO) films was achieved by rf (13.56 MHz) plasma treatment. Although the films were crystallized after 2 min, the sample temperature was lower than 90 deg. C without compulsory cooling even after 10 min of treatment and polyethylene terephthalate (PET) substrates had no damage. Plasma-crystallized sputtered ITO films have a bixbite structure and the resistivity reached to 1.6x10{sup -4} {omega}{center_dot}cm. ITO thin films have almost the same resistivity in both cases of PET and glass substrates used and plasma-treated PET ITO films have a bit higher resistivity than that of glass ITO films, while mass spectroscopy measurements indicated that ITO films deposited on PET substrates are expected to include no apparent gas species ejected from PET substrate. It was found that the plasma gas pressure is the key parameter for the effective crystallization and the appropriate gas pressure depends on the plasma gas species.

  5. (110)-oriented indium tin oxide films grown on m- and r-plane sapphire substrates

    NASA Astrophysics Data System (ADS)

    Chern, Ming-Yau; Lu, Tso-Wen; Xu, Wei-Lun

    2015-04-01

    Indium tin oxide (ITO) thin films have been deposited by pulsed laser deposition on m-plane (100) and r-plane (012) sapphire substrates. For both substrates, the films were grown with their [110] direction perpendicular to the substrate planes under the conditions of high growth temperature and high oxygen pressure. Their in-plane epitaxial relations with the substrates were identified to be ITO[001] ∥ Al2O3[020] and \\text{ITO}[1\\bar{1}0]\\parallel \\text{Al}2\\text{O}3[001] for the m-plane substrate. For the r-plane substrate, two types of lattice matching were observed: one being \\text{ITO}[001]\\parallel \\text{Al}2\\text{O}3[2,1, - 1/2] and \\text{ITO}[1\\bar{1}0]\\parallel \\text{Al}2\\text{O}3[4/3, - 4/3,2/3], the other being \\text{ITO}[001]\\parallel \\text{Al}2\\text{O}3[1, - 1,1/2] and \\text{ITO}[1\\bar{1}0]/\\text{Al}2\\text{O}3[8/3,4/3, - 2/3]. The electrical properties were measured by the Hall effect and van der Pauw methods at room temperature. All of the samples have low electrical resistivity on the order of 3.0 × 10-4 Ω cm, high carrier concentration of about 2.5 × 1020 cm-3, and mobility ranging from 70 to 90 cm2 V-1 s-1.

  6. Surface enhanced Raman scattering activity of TiN thin film prepared via nitridation of sol-gel derived TiO2 film

    NASA Astrophysics Data System (ADS)

    Dong, Zhanliang; Wei, Hengyong; Chen, Ying; Wang, Ruisheng; Zhao, Junhong; Lin, Jian; Bu, Jinglong; Wei, Yingna; Cui, Yi; Yu, Yun

    2015-10-01

    Surface-enhanced Raman scattering (SERS) is a powerful and non-destructive analytical technique tool for chemical and biological sensing applications. Metal-free SERS substrates have recently been developed by using semiconductor nanostructures. The optical property of TiN film is similar to that of gold. Besides that, its good chemical inertness and thermodynamic stability make TiN thin film an excellent candidate for SERS. In order to investigate its SERS activity, the TiN thin film was successfully prepared via direct nitridation of the sol-gel derived TiO2 thin film on the quartz substrate using ammonia gas as reducing agent. The crystallite structures and morphology of TiN thin film were determined by XRD, RAMAN and FE-SEM. The results show that the thin film obtained is cubic titanium nitride with a lattice parameter of 4.2349 Å. The surface of TiN thin film is rough and with the particles of 50 nm in average sizes. The thickness of TiN thin film is about 130 nm. The TiN thin film displays a surface Plasmon resonance absorption peak at around 476 nm, which can lead to a strong enhancement of the EM field on the interface. The Raman signal of the probe molecule R6G was greatly enhanced through TiN thin film substrates. The enhancement factor is about 4.1×103 and the detection limit achieves 10-6 M for R6G. The TiN thin film substrate also shows a good reproducibility of SERS performance. The results indicate that TiN thin film is an attractive material with potential application in SERS substrates.

  7. Patterned indium tin oxide nanofiber films and their electrical and optical performance

    NASA Astrophysics Data System (ADS)

    Miftahul Munir, Muhammad; Widiyandari, Hendri; Iskandar, Ferry; Okuyama, Kikuo

    2008-09-01

    We report on the preparation and characterization of indium tin oxide (ITO) nanofiber films with a patterned architecture that are transparent and conductive with a uniform fiber size. ITO nanofiber films with a crisscross pattern were prepared by the electrospinning of a precursor solution containing ethanol, dimethyl formamide (DMF), indium chloride tetrahydrate, tin chloride pentahydrate and poly(vinyl pyrrolidone) (PVP K90) onto a metal mesh template, followed by calcinations after transfer to a glass substrate. The resulting ITO nanofibers had diameters of the order of 100 nm and were composed of single-crystalline nanoparticles that were pure in chemical composition. The morphology, crystallinity and performance of the resulting nanofibers could be controlled mainly by calcination. Optical and electrical investigations demonstrated that these nanofiber films are transparent conductors with an optical transmittance as high as 92%. The resulting patterned ITO nanofiber films would be suitable for applications such as solar cells, sensors and electromagnetic field filters.

  8. Porous copper zinc tin sulfide thin film as photocathode for double junction photoelectrochemical solar cells.

    PubMed

    Dai, Pengcheng; Zhang, Guan; Chen, Yuncheng; Jiang, Hechun; Feng, Zhenyu; Lin, Zhaojun; Zhan, Jinhua

    2012-03-21

    Porous copper zinc tin sulfide (CZTS) thin film was prepared via a solvothermal approach. Compared with conventional dye-sensitized solar cells (DSSCs), double junction photoelectrochemical cells using dye-sensitized n-type TiO(2) (DS-TiO(2)) as the photoanode and porous p-type CZTS film as the photocathode shows an increased short circuit current, external quantum efficiency and power conversion efficiency.

  9. Defect engineered d{sup 0} ferromagnetism in tin-doped indium oxide nanostructures and nanocrystalline thin-films

    SciTech Connect

    Khan, Gobinda Gopal E-mail: sghoshphysics@gmail.com; Sarkar, Ayan; Ghosh, Shyamsundar E-mail: sghoshphysics@gmail.com; Mandal, Guruprasad; Mukherjee, Goutam Dev; Manju, Unnikrishnan; Banu, Nasrin; Dev, Bhupendra Nath

    2015-08-21

    Origin of unexpected defect engineered room-temperature ferromagnetism observed in tin-doped indium oxide (ITO) nanostructures (Nanowires, Nano-combs) and nanocrystalline thin films fabricated by pulsed laser deposition has been investigated. It is found that the ITO nanostructures prepared under argon environment exhibit strongest ferromagnetic signature as compared to that nanocrystalline thin films grown at oxygen. The evidence of singly ionized oxygen vacancy (V{sub 0}{sup +}) defects, obtained from various spectroscopic measurements, suggests that such V{sub 0}{sup +} defects are mainly responsible for the intrinsic ferromagnetic ordering. The exchange interaction of the defects provides extensive opportunity to tune the room-temperature d{sup 0} ferromagnetism and optical properties of ITOs.

  10. Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide

    NASA Astrophysics Data System (ADS)

    Chen, Zhuofa; Han, Dedong; Zhao, Nannan; Wu, Jing; Cong, Yingying; Dong, Junchen; Zhao, Feilong; Zhang, Shengdong; Zhang, Xing; Wang, Yi; Liu, Lifeng

    2015-04-01

    By applying a novel active modulation layer of indium tin oxide/tin zinc oxide (ITO/TZO), we have successfully fabricated high-performance bottom-gate-type dual-active-layer thin-film transistors (TFTs) on a glass substrate at a low temperature by a simple process. The as-fabricated dual-active-layer ITO/TZO TFTs exhibited excellent electrical properties compared with single-active-layer TZO TFTs. We found that the dual-layer ITO/TZO TFT with an optimized stack structure of ITO (5 nm)/TZO (45 nm) as the channel layer exhibits excellent properties, namely, a high saturation mobility of 204 cm2 V-1 s-1, a steep subthreshold slope of 219 mV/dec, a low threshold voltage of 0.8 V, and a high on-off current ratio of 4.3 × 107. A physical mechanism for the electrical improvement is also deduced. Owing to its advantages, namely, a low processing temperature, a high electrical performance, a simple process, and a low cost, this novel active modulation layer is highly promising for the manufacture of oxide semiconductor TFT and transparent displays.

  11. The Tribological Behaviors of Three Films Coated on Biomedical Titanium Alloy by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Wang, Song; Liao, Zhenhua; Liu, Yuhong; Liu, Weiqiang

    2015-11-01

    Three thin films (DLC, a-C, and TiN) were performed on Ti6Al4V by chemical vapor deposition. Carbon ion implantation was pretreated for DLC and a-C films while Ti transition layer was pretreated for TiN film to strengthen the bonding strength. X-ray diffraction, Raman measurement, nano-hardness and nano-scratch tester, and cross-section etching by FIB method were used to analyze film characteristics. Tribological behaviors of these coatings were studied by articulation with both ZrO2 and UHMWPE balls using ball-on-disk sliding. The thickness values reached ~0.46, ~0.33, and ~1.67 μm for DLC, a-C, and TiN film, respectively. Nano-hardness of the coatings compared with that of untreated and bonding strength (critical load in nano-scratch test) values of composite coatings compared with that of monolayer film all increased significantly, respectively. Under destructive test (ZrO2 ball conterface) in bovine serum lubrication, TiN coating revealed the best wear resistance while DLC showed the worst. Film failure was mainly attributed to the plowing by hard ZrO2 ball characterized by abrasive and adhesive wear. Under normal test (UHMWPE ball conterface), all coatings showed significant improvement in wear resistance both in dry sliding and bovine serum lubrication. Both DLC and a-C films showed less surface damage than TiN film due to the self-lubricating phenomenon in dry sliding. TiN film showed the largest friction coefficient both in destructive and normal tests, devoting to the big TiN grains thus leading to much rougher surface and then a higher value. The self-lubricating film formed on DLC and a-C coating could also decrease their friction coefficients. The results indicated that three coatings revealed different wear mechanisms, and thick DLC or a-C film was more promising in application in lower stress conditions such as artificial cervical disk.

  12. Homogeneous superconducting phase in TiN film: A complex impedance study

    NASA Astrophysics Data System (ADS)

    Diener, P.; Schellevis, H.; Baselmans, J. J. A.

    2012-12-01

    The low frequency complex impedance of a high resistivity 92 μ Ω cm and 100 nm thick TiN superconducting film has been measured via the transmission of several high sensitivity GHz microresonators, down to TC/50. The temperature dependence of the kinetic inductance follows closely BCS local electrodynamics, with one well defined superconducting gap. This evidences the recovery of a homogeneous superconducting phase in TiN far from the disorder and composition driven transitions. Additionally, we observe a linearity between resonator quality factor and frequency temperature changes, which can be described by a two fluid model.

  13. Deposition of thin films of multicomponent materials

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor)

    1993-01-01

    Composite films of multicomponent materials, such as oxides and nitrides, e.g., lead zirconate titanate, are deposited by dc magnetron sputtering, employing a rotating substrate holder, which rotates relative to a plurality of targets, one target for each metal element of the multicomponent material. The sputtering is carried out in a reactive atmosphere. The substrates on which the layers are deposited are at ambient temperature. Following deposition of the composite film, the film is heated to a temperature sufficient to initiate a solid state reaction and form the final product, which is substantially single phase and substantially homogeneous.

  14. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect

    Hu, W.; Peterson, R. L.

    2014-05-12

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  15. Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Juneja, Sucheta; Poletayev, Sergey D.; Fomchenkov, Sergey; Khonina, Svetlana N.; Skidanov, Roman V.; Kazanskiy, Nikolay L.

    2016-08-01

    Indium tin oxide (ITO) films have been a subject of extensive studies in fabrication of micro-electronic devices for opto-electronic applications ranging from anti-reflection coatings to transparent contacts in photovoltaic devices. In this paper, a new and effective way of reactive ion etching of a conducting indium-tin oxide (ITO) film with Carbon tetrachloride (CCl4) has been investigated. CCl4 plasma containing an addition of gases mixture of dissociated argon and oxygen were used. Oxygen is added to increase the etchant percentage whereas argon was used for stabilization of plasma. The etching characteristics obtained with these gaseous mixtures were explained based on plasma etch chemistry and etching regime of ITO films. An etch rate as high as ∼20 nm/min can be achieved with a controlled process parameter such as power density, total flow rate, composition of reactive gases gas and pressure. Our Investigation represents some of the extensive work in this area.

  16. Plasma deposition of organic thin films: Control of film chemistry

    SciTech Connect

    Ratner, B.D.

    1993-12-31

    Plasma deposition of thin, polymeric films represent a versatile surface modification technology. Although these thin films are exploited for many applications, complaints heard about plasma deposited films are that their structures are uncharacterizable, that organic functionality is lost in their production and that reproducibility is difficult. Recently, new methods for film production, reactor control and surface characterization have led to well characterized plasma deposited thin polymeric films (PDTPF) with defined structure and organic functionality. Such PDTPF often closely resemble conventionally prepared homopolymers. Methods that can be used to control the chemistry of PDTPF are the minimization of the plasma power, pulsing the RF field to reduce the {open_quotes}plasma on{close_quotes} time, use of a Faraday cage to reduce electron bombardment, positioning the sample downfield from the glow zone, the use of monomers containing polymerizable double bonds and the use of a cold substrate to condense vapor simultaneously with plasma deposition.

  17. Continuous Microreactor-Assisted Solution Deposition for Scalable Production of CdS Films

    SciTech Connect

    Ramprasad, Sudhir; Su, Yu-Wei; Chang, Chih-Hung; Paul, Brian; Palo, Daniel R.

    2013-06-13

    Solution deposition offers an attractive, low temperature option in the cost effective production of thin film solar cells. Continuous microreactor-assisted solution deposition (MASD) was used to produce nanocrystalline cadmium sulfide (CdS) films on fluorine doped tin oxide (FTO) coated glass substrates with excellent uniformity. We report a novel liquid coating technique using a ceramic rod to efficiently and uniformly apply reactive solution to large substrates (152 mm × 152 mm). This technique represents an inexpensive approach to utilize the MASD on the substrate for uniform growth of CdS films. Nano-crystalline CdS films have been produced from liquid phase at ~90°C, with average thicknesses of 70 nm to 230 nm and with a 5 to 12% thickness variation. The CdS films produced were characterized by UV-Vis spectroscopy, transmission electron microscopy, and X-Ray diffraction to demonstrate their suitability to thin-film solar technology.

  18. Physicochemical characterization of point defects in fluorine doped tin oxide films

    SciTech Connect

    El Akkad, Fikry; Joseph, Sudeep

    2012-07-15

    The physical and chemical properties of spray deposited FTO films are studied using FESEM, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), electrical and optical measurements. The results of XRD measurements showed that the films are polycrystalline (grain size 20-50 nm) with Rutile structure and mixed preferred orientation along the (200) and (110) planes. An angular shift of the XRD peaks after F-doping is observed and interpreted as being due to the formation of substitutional fluorine defects (F{sub O}) in presence of high concentration of oxygen vacancies (V{sub O}) that are electrically neutral. The electrical neutrality of oxygen vacancies is supported by the observation that the electron concentration n is two orders of magnitude lower than the V{sub O} concentration calculated from chemical analyses using XPS measurements. It is shown that an agreement between XPS, XRD, and Hall effect results is possible provided that the degree of deviation from stoichiometry is calculated with the assumption that the major part of the bulk carbon content is involved in O-C bonds. High temperature thermal annealing is found to cause an increase in the F{sub O} concentration and a decrease in both n and V{sub O} concentrations with the increase of the annealing temperature. These results could be interpreted in terms of a high temperature chemical exchange reaction between the SnO{sub 2} matrix and a precipitated fluoride phase. In this reaction, fluorine is released to the matrix and Sn is trapped by the fluoride phase, thus creating substitutional fluorine F{sub O} and tin vacancy V{sub Sn} defects. The enthalpy of this reaction is determined to be approximately 2.4 eV while the energy of formation of a V{sub Sn} through the migration of Sn{sub Sn} host atom to the fluoride phase is approximately 0.45 eV.

  19. Structural properties of indium tin oxide thin films prepared for application in solar cells

    SciTech Connect

    Gheidari, A. Mohammadi; Mohajerzadeh, S.; Shams-Kolahi, W.

    2005-08-11

    Indium tin oxide (ITO) thin films prepared by rf sputtering were annealed in several temperatures. The electrical, optical and structural properties of these films are systematically investigated. The post annealing of the samples lead to considerably higher electrical conductivity, better optical transparency and larger grain size for the films. In an optimum annealing temperature of 400 deg. C, we have found that a maximized conductivity of films is achieved without a remarkable loss in their transparency. The sheet resistance of 2.3 {omega}/{open_square} and average grain size of 30 nm, are the results of the optimized post processing of films. The investigation for microstructure of films investigated by X-ray diffraction measurement (XRD) shows that a preferential crystal growth toward the (2 2 2) orientation takes place when the annealing temperature increases to 400 deg. C.

  20. Atomistic aspects of carrier concentration variation in post-annealed indium tin oxide films

    NASA Astrophysics Data System (ADS)

    Kim, Ji-Woong; Kim, Hyegyeong; Lee, Min-Young; Lee, Doo-Yong; Lee, Ji-Sung; Jang, Yun Hyeong; Bae, Jong-Seong; Lee, Jeong-Soo; Park, Sungkyun

    2015-10-01

    Post-annealing environment-dependent optical and electrical properties of indium tin oxide films grown on glass were examined. X-ray diffraction measurements revealed that all of the films exhibited poly-crystallinity after annealing at 400 °C for 10 min O2, in-air and N2. The optical property measurements yielded  >80% transmittances for all the films except for the as-grown and O2-annealed films, even though there were no significant optical band-gap energy differences. In the Hall measurements, all of the films exhibited n-type characteristics. However, the film annealed under the N2 environment showed the best electrical properties (highest carrier concentration and conductivity). The physical origin of electrical property variations due to annealing environment differences was explained by examining the core-level x-ray photoelectron spectra.

  1. Enhanced Bactericidal Activity of Silver Thin Films Deposited via Aerosol-Assisted Chemical Vapor Deposition.

    PubMed

    Ponja, Sapna D; Sehmi, Sandeep K; Allan, Elaine; MacRobert, Alexander J; Parkin, Ivan P; Carmalt, Claire J

    2015-12-30

    Silver thin films were deposited on SiO2-barrier-coated float glass, fluorine-doped tin oxide (FTO) glass, Activ glass, and TiO2-coated float glass via AACVD using silver nitrate at 350 °C. The films were annealed at 600 °C and analyzed by X-ray powder diffraction, X-ray photoelectron spectroscopy, UV/vis/near-IR spectroscopy, and scanning electron microscopy. All the films were crystalline, and the silver was present in its elemental form and of nanometer dimension. The antibacterial activity of these samples was tested against Escherichia coli and Staphylococcus aureus in the dark and under UV light (365 nm). All Ag-deposited films reduced the numbers of E. coli by 99.9% within 6 h and the numbers of S. aureus by 99.9% within only 2 h. FTO/Ag reduced bacterial numbers of E. coli to below the detection limit after 60 min and caused a 99.9% reduction of S. aureus within only 15 min of UV irradiation. Activ/Ag reduced the numbers of S. aureus by 66.6% after 60 min and TiO2/Ag killed 99.9% of S. aureus within 60 min of UV exposure. More remarkably, we observed a 99.9% reduction in the numbers of E. coli within 6 h and the numbers of S. aureus within 4 h in the dark using our novel TiO2/Ag system.

  2. Periodic oxidation for fabricating titanium oxynitride thin films via atomic layer deposition

    SciTech Connect

    Iwashita, Shinya Aoyama, Shintaro; Nasu, Masayuki; Shimomura, Kouji; Noro, Naotaka; Hasegawa, Toshio; Akasaka, Yasushi; Miyashita, Kohei

    2016-01-15

    This paper demonstrates thermal atomic layer deposition (ALD) combined with periodic oxidation for synthesizing titanium oxynitride (TiON) thin films. The process used a typical ALD reactor for the synthesis of titanium nitride (TiN) films wherein oxygen was supplied periodically between the ALD-TiN cycles. The great advantage of the process proposed here was that it allowed the TiN films to be oxidized efficiently. Also, a uniform depth profile of the oxygen concentration in the films could be obtained by tuning the oxidation conditions, allowing the process to produce a wide variety of TiON films. The resistivity measurement is a convenient method to confirm the reproducibility of metal film fabrication but may not be applicable for TiON films depending upon the oxidation condition because the films can easily turn into insulators when subjected to periodic oxidation. Therefore, an alternative reproducibility confirmation method was required. In this study, spectroscopic ellipsometry was applied to monitor the variation of TiON films and was able to detect changes in film structures such as conductor–insulator transitions in the TiON films.

  3. Effect of cationic/anionic organic surfactants on evaporation induced self assembled tin oxide nanostructured films

    NASA Astrophysics Data System (ADS)

    Khun Khun, Kamalpreet; Mahajan, Aman; Bedi, R. K.

    2011-01-01

    Tin oxide nanostructures with well defined morphologies have been obtained through an evaporation induced self assembly process. The technique has been employed using an ultrasonic nebulizer for production of aersol and its subsequent deposition onto a heated glass substrate. The precursor used for aersol production was modified by introducing cationic and anionic surfactants namely cetyl trimethyl ammonium bromide and sodium dodecyl sulphate respectively. The effect of surfactants on the structural, electrical and optical properties of self assembled tin oxide nanostructures were investigated by using X-ray diffraction, field emission scanning electroscope microscopy, two probe technique and photoluminiscence studies. The results reveal that high concentration of surfactants in the precursor solution leads to reduction in crystallite size with significant changes in the morphology of tin oxide nanostructures. Photoluminiscence studies of the nanostructures show emissions in the visible region which exhibit marked changes in the intensities upon variation of surfactants in the precursor solutions.

  4. A study of reactive plasma deposited thin films

    NASA Technical Reports Server (NTRS)

    Gilchrist, J.; Williams, E.

    1986-01-01

    A state-of-the-art research laboratory was established to grow and characterize amorphous thin films that are useful in semi-conductor devices. Two film systems, nitride films and silicon dioxide films were studied. Over seventy deposition runs for nitride films were made. The films were deposited on silicon substrate using plasma enhanced chemical vapor deposition. It was found that the uniformity of the films were affected by the location of the film on the platen.

  5. Tailoring the structural and optical properties of TiN thin films by Ag ion implantation

    NASA Astrophysics Data System (ADS)

    Popović, M.; Novaković, M.; Rakočević, Z.; Bibić, N.

    2016-12-01

    Titanium nitride (TiN) thin films thickness of ∼260 nm prepared by dc reactive sputtering were irradiated with 200 keV silver (Ag) ions to the fluences ranging from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. After implantation TiN layers were annealed 2 h at 700 °C in a vacuum. Ion irradiation-induced microstructural changes were examined by using Rutherford backscattering spectrometry, X-ray diffraction and transmission electron microscopy, while the surface topography was observed using atomic force microscopy. Spectroscopic ellipsometry was employed to get insights on the optical and electronic properties of TiN films with respect to their microstructure. The results showed that the irradiations lead to deformation of the lattice, increasing disorder and formation of new Ag phase. The optical results demonstrate the contribution of surface plasmon resonace (SPR) of Ag particles. SPR position shifted in the range of 354.3-476.9 nm when Ag ion fluence varied from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. Shift in peak wavelength shows dependence on Ag particles concentration, suggesting that interaction between Ag particles dominate the surface plasmon resonance effect. Presence of Ag as second metal in the layer leads to overall decrease of optical resistivity of TiN.

  6. Metal film deposition by laser breakdown chemical vapor deposition

    SciTech Connect

    Jervis, T.R.

    1985-01-01

    Dielectric breakdown of gas mixtures can be used to deposit homogeneous thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas phase nucleation and particle formation. Using a pulsed CO/sub 2/ laser operating at 10.6 microns where there is no significant resonant absorption in any of the source gases, we have succeeded in depositing homogeneous films from several gas phase precursors by gas phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls and tungsten from the hexafluoride have been examined to date. In each case the gas precursor is buffered to reduce the partial pressure of the reactants and to induce breakdown. The films are spectrally reflective and uniform over a large area. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size (approx. 50 A) consistent with rapid quenching from the gas phase reaction zone. This analysis also shows nickel carbide formation consistent with the temperature of the reaction zone and the Auger electron spectroscopy results which show some carbon and oxygen incorporation (8% and 1% respectively). Gas phase transport and condensation of the molybdenum carbonyl results in substantial carbon and oxygen contamination of the molybdenum films requiring heated substrates, a requirement not consistent with the goals of the program to maximize the quench rate of the deposition. Results from tungsten deposition experiments representing a reduction chemistry instead of the decomposition chemistry involved in the carbonyl experiments are also reported.

  7. Metal film deposition by laser breakdown chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jervis, T. R.

    1985-01-01

    Dielectric breakdown of gas mixtures can be used to deposit homogeneous thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas phase nucleation and particle formation. Using a pulsed CO2 laser operating at 10.6 microns where there is no significant resonant absorption in any of the source gases, we have succeeded in depositing homogeneous films from several gas phase precursors by gas phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls and tungsten from the hexafluoride have been examined to date. In each case the gas precursor is buffered to reduce the partial pressure of the reactants and to induce breakdown. The films are spectrally reflective and uniform over a large area. Films have been characterized by Auger electron spectroscopy, X-ray diffraction, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed X-ray diffraction analysis of these films yields a very small domain size (approx. 50 A) consistent with rapid quenching from the gas phase reaction zone. This analysis also shows nickel carbide formation consistent with the temperature of the reaction zone and the Auger electron spectroscopy results which show some carbon and oxygen incorporation (8% and 1% respectively). Gas phase transport and condensation of the molybdenum carbonyl results in substantial carbon and oxygen contamination of the molybdenum films requiring heated substrates, a requirement not consistent with the goals of the program to maximize the quench rate of the deposition. Results from tungsten deposition experiments representing a reduction chemistry instead of the decomposition chemistry involved in the carbonyl experiments are also reported.

  8. In situ electro-mechanical experiments and mechanics modeling of tensile cracking in indium tin oxide thin films on polyimide substrates

    NASA Astrophysics Data System (ADS)

    Peng, Cheng; Jia, Zheng; Bianculli, Dan; Li, Teng; Lou, Jun

    2011-05-01

    Indium tin oxide (ITO) thin films supported by polymer substrates have been widely used as transparent electrodes/interconnects in flexible electronics. Understanding the electro-mechanical behaviors of such material system is crucial for reliable operation of flexible devices under large deformation. In this paper, we performed in situ mechanical and electrical tests of ITO thin films with two different thicknesses (200 and 80 nm) deposited on polyimide substrates inside a scanning electron microscope. The crack initiation and propagation, crack density evolution and the corresponding electrical resistance variation were systematically investigated. It was found that cracks initiated at a higher tensile strain level and saturated with a higher density in thinner ITO films. Integrated with a coherently formulated mechanics model, the cohesive toughness and fracture strength of ITO thin films and the ITO/polyimide interfacial toughness were quantitatively determined. The experimentally observed thickness dependence of the saturated crack density in ITO thin films was also quantitatively verified by the model.

  9. Carrier interactions and porosity initiated reversal of temperature dependence of thermal conduction in nanoscale tin films

    SciTech Connect

    Kaul, Pankaj B.; Prakash, Vikas

    2014-01-14

    Recently, tin has been identified as an attractive electrode material for energy storage/conversion technologies. Tin thin films have also been utilized as an important constituent of thermal interface materials in thermal management applications. In this regards, in the present paper, we investigate thermal conductivity of two nanoscale tin films, (i) with thickness 500 ± 50 nm and 0.45% porosity and (ii) with thickness 100 ± 20 nm and 12.21% porosity. Thermal transport in these films is characterized over the temperature range from 40 K–310 K, using a three-omega method for multilayer configurations. The experimental results are compared with analytical predictions obtained by considering both phonon and electron contributions to heat conduction as described by existing frequency-dependent phenomenological models and BvK dispersion for phonons. The thermal conductivity of the thicker tin film (500 nm) is measured to be 46.2 W/m-K at 300 K and is observed to increase with reduced temperatures; the mechanisms for thermal transport are understood to be governed by strong phonon-electron interactions in addition to the normal phonon-phonon interactions within the temperature range 160 K–300 K. In the case of the tin thin film with 100 nm thickness, porosity and electron-boundary scattering supersede carrier interactions, and a reversal in the thermal conductivity trend with reduced temperatures is observed; the thermal conductivity falls to 1.83 W/m-K at 40 K from its room temperature value of 36.1 W/m-K. In order to interpret the experimental results, we utilize the existing analytical models that account for contributions of electron-boundary scattering using the Mayadas-Shatzkes and Fuchs-Sondheimer models for the thin and thick films, respectively. Moreover, the effects of porosity on carrier transport are included using a previous treatment based on phonon radiative transport involving frequency-dependent mean free paths

  10. Ion plating technique improves thin film deposition

    NASA Technical Reports Server (NTRS)

    Mattox, D. M.

    1968-01-01

    Ion plating technique keeps the substrate surface clean until the film is deposited, allows extensive diffusion and chemical reaction, and joins insoluble or incompatible materials. The technique involves the deposition of ions on the substrate surface while it is being bombarded with inert gas ions.

  11. Growth feature of ionic nitrogen doped CNx bilayer films with Ti and TiN interlayer by pulse cathode arc discharge

    NASA Astrophysics Data System (ADS)

    Zhou, Bing; Liu, Zhubo; Piliptsou, D. G.; Rogachev, A. V.; Yu, Shengwang; Wu, Yanxia; Tang, Bin; Rudenkov, A. S.

    2016-01-01

    Using nano-scaled Ti and TiN as interlayer, ionic nitrogen doped carbon (CNx (N+)) bilayer films were prepared at various pulse frequencies by cathode arc technique. Elemental distribution at the interface, bonding compositions, microstructure, and mechanical properties of CNx (N+) bilayer films were investigated in dependence of interlayer and pulse frequency by Auger electron spectroscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, nanoindentation, and surface profilometer. The results showed that the diffusion extent of C atoms at the interface of CNx (N+) bilayers is higher than for the α-C and CNx (N2) bilayers with the same interlayer. Nitrogen atoms could diffuse throughout the pre-deposited Ti and TiN layers into the Si substrate for all CNx (N+) bilayers. Ti interlayer facilitates the introduction of N atoms into the CNx (N+) films and exhibits a certain catalytic effect on the coordination of N atoms with sp2- and sp3-C binding. More nitrogenated and intense CN bonding configurations (mainly graphite-like N) form in the TiN/CNx (N+) bilayer. Ti/CNx (N+) bilayer prepared at low frequency possesses small size and disordering of Csp2 clusters but TiN interlayer weakens the formation of Csp2 bonding and increases the disordering of Csp2 clusters in the films. The residual stress in the bilayer is lower than for CNx (N+) monolayer. The higher hardness and the lower residual stress are present in the TiN/CNx (N+, 10 Hz) bilayer.

  12. Characteristics Of Vacuum Deposited Sucrose Thin Films

    NASA Astrophysics Data System (ADS)

    Ungureanu, F.; Predoi, D.; Ghita, R. V.; Vatasescu-Balcan, R. A.; Costache, M.

    Thin films of sucrose (C12H22O11) were deposited on thin cut glass substrates by thermal evaporation technique (p ~ 10-5 torr). The surface morphology was putted into evidence by FT-IR and SEM analysis. The experimental results confirm a uniform deposition of an adherent sucrose layer. The biological tests (e.g., cell morphology and cell viability evaluated by measuring mitochondrial dehydrogenise activity with MTT assay) confirm the properties of sucrose thin films as bioactive material. The human fetal osteoblast system grown on thin sucrose film was used for the determination of cell proliferation, cell viability and cell morphology studies.

  13. TiN films fabricated by reactive gas pulse sputtering: A hybrid design of multilayered and compositionally graded structures

    NASA Astrophysics Data System (ADS)

    Yang, Jijun; Zhang, Feifei; Wan, Qiang; Lu, Chenyang; Peng, Mingjing; Liao, Jiali; Yang, Yuanyou; Wang, Lumin; Liu, Ning

    2016-12-01

    Reactive gas pulse (RGP) sputtering approach was used to prepare TiN thin films through periodically changing the N2/Ar gas flow ratio. The obtained RGPsbnd TiN film possessed a hybrid architecture containing compositionally graded and multilayered structures, composed of hcp Ti-phase and fcc TiN-phase sublayers. Meanwhile, the RGP-TiN film exhibited a composition-oscillation along the film thickness direction, where the Ti-phase sublayer had a compositional gradient and the TiN-phase retained a constant stoichiometric ratio of Ti:N ≈ 1. The film modulation ratio λ (the thicknesses ratio of the Ti and TiN-phase sublayer) can be effectively tuned by controlling the undulation behavior of the N2 partial flow rate. Detailed analysis showed that this hybrid structure originated from a periodic transition of the film growth mode during the reactive sputtering process.

  14. Surface measurement of indium tin oxide thin film by wavelength-tuning Fizeau interferometry.

    PubMed

    Kim, Yangjin; Hibino, Kenichi; Sugita, Naohiko; Mitsuishi, Mamoru

    2015-08-10

    Indium-tin oxide (ITO) thin films have been widely used in displays such as liquid crystal displays and touch panels because of their favorable electrical conductivity and optical transparency. The surface shape and thickness of ITO thin films must be precisely measured to improve their reliability and performance. Conventional measurement techniques take single point measurements and require expensive systems. In this paper, we measure the surface shape of an ITO thin film on top of a transparent plate using wavelength-tuning Fizeau interferometry. The surface shape was determined by compensating for the phase error introduced by optical interference from the thin film, which was calculated using the phase and amplitude distributions measured by wavelength-tuning. The proposed measurement method achieved noncontact, large-aperture, and precise measurements of transparent thin films. The surface shape of the sample was experimentally measured to an accuracy of 5.13 nm.

  15. Hard Carbon Films Deposited under Various Atmospheres

    NASA Astrophysics Data System (ADS)

    Wei, M.-K.; Chen, S.-C.; Wu, T. C.; Lee, Sanboh

    1998-03-01

    Using a carbon target ablated with an XeCl-excimer laser under various gas atmospheres at different pressures, hard carbon was deposited on silicon, iron and tungsten carbide substrates. The hardness, friction coefficient, and wear rate of the film against steel are better than pure substrate material, respectively, so that it has potential to be used as a protective coating for micromechanical elements. The influences of gas pressure, gas atmosphere, and power density of laser irradiation on the thermal stability of film were analyzed by means of Raman-spectroscope, time-of-flight method, and optical emission spectrum. It was found that the film deposited under higher pressure has less diamond-like character. The film deposited under rest gas or argon atmosphere was very unstable and looked like a little graphite-like character. The film deposited at high vacuum (10-5 mbar rest gas) was the most stable and looked like the most diamond-like character. The film deposited at higher power density was more diamond-like than that at lower power density.

  16. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  17. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    SciTech Connect

    Amusan, Akinwumi A. Kalkofen, Bodo; Burte, Edmund P.; Gargouri, Hassan; Wandel, Klaus; Pinnow, Cay; Lisker, Marco

    2016-01-15

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.

  18. Metal film deposition by laser breakdown chemical vapor deposition

    SciTech Connect

    Jervis, T. R.; Newkirk, L. R.

    1986-06-01

    Dielectric breakdown of gas mixtures can be used to deposit thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas-phase nucleation and particle formation. Using a pulsed CO/sub 2/ laser operating at 10.6 ..mu.. where there is no significant resonant absorption in any of the source gases, homogeneous films from several gas-phase precursors have been sucessfully deposited by gas-phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls representing decomposition chemistry and tungsten from the hexafluoride representing reduction chemistry have been demonstrated. In each case the gas precursor is buffered with argon to reduce the partial pressure of the reactants and to induce breakdown. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size consistent with the low temperature of the substrate and the formation of metastable nickel carbide. Transmission electron microscopy supports this analysis.

  19. The cis-bis(decanoate)tin phthalocyanine/DPPC film at the air/water interface.

    PubMed

    Ramos, Salvador; Garza, Cristina; Beltran, Hiram I; Campos-Terán, José; Arenas-Alatorre, Jesús; Castillo, Rolando

    2012-03-01

    Films made of cis-bis-decanoate-tin(IV) phthalocyanine (PcSn10) and racemic dipalmitoylphosphatidylcholine (DPPC) are studied with compression isotherms and Brewster angle microscopy (BAM) at the air/water interface. Films enriched in PcSn10 present phase separation elliptical-shaped domains. These domains present optical anisotropy and molecular order. They are enriched in PcSn10, and the film outside these domains is enriched in DPPC, as shown in by high-angle annular dark-field transmission electron microscopy on Langmuir-Blodgett (LB) transferred films. Film collapse area and atomic force microscopy images of LB transferred films on mica indicate that the films are actually multilayers. A computational survey was performed to determine how the PcSn10 molecules prefer to self-assemble, in films basically made of PcSn10. The relative energetic stability for several dimeric assemblies was obtained, and a crystal model of the film was developed through packing and repeating the PcSn10 molecules, along the crystallographic directions of the unit cell. Our results contribute to understanding the strong interaction between PcSn10 and DPPC at the air/water interface, where even small quantities of DPPC (~1-2%) can modify the film in an important way.

  20. Laser patterning of very thin indium tin oxide thin films on PET substrates

    NASA Astrophysics Data System (ADS)

    McDonnell, C.; Milne, D.; Prieto, C.; Chan, H.; Rostohar, D.; O'Connor, G. M.

    2015-12-01

    This work investigates the film removal properties of 30 nm thick Indium Tin Oxide (ITO) thin films, on flexible polyethylene terephthalate (PET) substrates, using 355, 532 and 1064 nm nanosecond pulses (ns), and 343 and 1064 nm femtosecond pulses. The ablation threshold was found to be dependent on the applied wavelength and pulse duration. The surface topography of the laser induced features were examined using atomic force microscopy across the range of wavelengths and pulse durations. The peak temperature, strain and stress tensors were examined in the film and substrate during laser heating, using finite element computational methods. Selective removal of the thin ITO film from the polymer substrate is possible at all wavelengths except at 266 nm, were damage to substrate is observed. The damage to the substrate results in periodic surface structures (LIPPS) on the exposed PET, with a period of twice the incident wavelength. Fragmented crater edges are observed at all nanosecond pulse durations. Film removal using 1030 nm femtosecond pulses results in clean crater edges, however, minor 5 nm damage to the substrate is also observed. The key results show that film removal for ITO on PET, is through film de-lamination across all wavelengths and pulse durations. Film de-lamination occurs due to thermo-elastic stress at the film substrate interface region, as the polymer substrate expands under heating from direct laser absorption and heat conduction across the film substrate interface.

  1. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  2. Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

    NASA Astrophysics Data System (ADS)

    Marikkannan, M.; Subramanian, M.; Mayandi, J.; Tanemura, M.; Vishnukanthan, V.; Pearce, J. M.

    2015-01-01

    Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O2), hydrogen (H2) and nitrogen (N2) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O2+H2 ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O2, H2 on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O2 and Ar+O2+H2. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O2+H2 sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O2+H2 ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O2+H2 ambient is a good choice to enhance the total optoelectronic properties of the ITO films

  3. Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

    SciTech Connect

    Marikkannan, M.; Subramanian, M.; Tanemura, M.; Mayandi, J. E-mail: jeyanthinath@yahoo.co.in; Vishnukanthan, V.; Pearce, J. M. E-mail: jeyanthinath@yahoo.co.in

    2015-01-15

    Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O{sub 2}), hydrogen (H{sub 2}) and nitrogen (N{sub 2}) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O{sub 2}+H{sub 2} ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O{sub 2}, H{sub 2} on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O{sub 2} and Ar+O{sub 2}+H{sub 2}. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O{sub 2}+H{sub 2} sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O{sub 2}+H{sub 2} ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O{sub 2}+H

  4. Iron films deposited on porous alumina substrates

    NASA Astrophysics Data System (ADS)

    Yamada, Yasuhiro; Tanabe, Kenichi; Nishida, Naoki; Kobayashi, Yoshio

    2016-12-01

    Iron films were deposited on porous alumina substrates using an arc plasma gun. The pore sizes (120 - 250 nm) of the substrates were controlled by changing the temperature during the anodic oxidation of aluminum plates. Iron atoms penetrated into pores with diameters of less than 160 nm, and were stabilized by forming γ-Fe, whereas α-Fe was produced as a flat plane covering the pores. For porous alumina substrates with pore sizes larger than 200 nm, the deposited iron films contained many defects and the resulting α-Fe had smaller hyperfine magnetic fields. In addition, only a very small amount of γ-Fe was obtained. It was demonstrated that the composition and structure of an iron film can be affected by the surface morphology of the porous alumina substrate on which the film is grown.

  5. Ultrashort pulse laser deposition of thin films

    DOEpatents

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  6. Metalloorganic solution deposition of ferroelectric PZT films.

    PubMed

    Lipeles, R A; Coleman, D J; Leung, M S

    1991-01-01

    The metallo-organic solution deposition (MOSD or sol-gel) technique can be used for preparing lead zirconate titanate (PZT) ceramics with a wide range of compositions and crystal structures for electrooptical applications. Film morphology is affected by the stoichiometry of the film, hydrolysis and polymerization of the sol-gel solution, and thermal treatment of the deposited material. The lattice parameter decreases with the amount of titanium in the PZT, in agreement with ceramic data. A slight initial excess of lead in the coating solution is found to improve film morphology. Unlike traditional powder ceramic processing techniques, MOSD permits the growth of small uniform grains that are conducive to achieving consistent electronic and optical properties. Results show that the properties of films prepared by the MOSD process can be tailored to meet the needs of device applications.

  7. Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity

    NASA Astrophysics Data System (ADS)

    Losurdo, M.; Giangregorio, M.; Capezzuto, P.; Bruno, G.; de Rosa, R.; Roca, F.; Summonte, C.; Plá, J.; Rizzoli, R.

    2002-01-01

    Indium-tin-oxide (ITO) films deposited by sputtering and e-gun evaporation on both transparent (Corning glass) and opaque (c-Si, c-Si/SiO2) substrates and in c-Si/a-Si:H/ITO heterostructures have been analyzed by spectroscopic ellipsometry (SE) in the range 1.5-5.0 eV. Taking the SE advantage of being applicable to absorbent substrate, ellipsometry is used to determine the spectra of the refractive index and extinction coefficient of the ITO films. The effect of the substrate surface on the ITO optical properties is focused and discussed. To this aim, a parametrized equation combining the Drude model, which considers the free-carrier response at the infrared end, and a double Lorentzian oscillator, which takes into account the interband transition contribution at the UV end, is used to model the ITO optical properties in the useful UV-visible range, whatever the substrate and deposition technique. Ellipsometric analysis is corroborated by sheet resistance measurements.

  8. Laser deposition of bimetallic island films

    NASA Astrophysics Data System (ADS)

    Kucherik, A. O.; Arakelyan, S. M.; Kutrovskaya, S. V.; Osipov, A. V.; Istratov, A. V.; Vartanyan, T. A.; Itina, T. E.

    2016-08-01

    In this work the results of a bimetallic Au-Ag structure deposition from the colloidal system by nanosecond laser radiation are presented. The formation of the extended arrays of gold and silver nanoparticles with controlled morphology is examined. We report the results of formation bimetallic islands films with various electrical and optical properties. The changes in the optical properties of the obtained thin films are found to depend on their morphology.

  9. Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications

    NASA Astrophysics Data System (ADS)

    Gu, Jin-Hua; Si, Jia-Le; Wang, Jiu-Xiu; Feng, Ya-Yang; Gao, Xiao-Yong; Lu, Jing-Xiao

    2015-11-01

    The indium-tin oxide (ITO) film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction (HJ) solar cells. To obtain high transmittance and low resistivity ITO films by direct-current (DC) magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4×10-4 Ω·m and average transmittance of 89% in the wavelength range of 380-780 nm were obtained under the optimized conditions: oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si:H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage (Voc) of 0.626 V, a filling factor (FF) of 0.50, and a short circuit current density (Jsc) of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si:H layer was inserted between the (p) a-Si:H and (n) c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si:H. Project supported by the National High Technology Research and Development Program of China (Grant No. 2011AA050501).

  10. Synthesis And Characterization of Copper Zinc Tin Sulfide Nanoparticles And Thin Films

    NASA Astrophysics Data System (ADS)

    Khare, Ankur

    Copper zinc tin sulfide (Cu2ZnSnS4, or CZTS) is emerging as an alternative material to the present thin film solar cell technologies such as Cu(In,Ga)Se2 and CdTe. All the elements in CZTS are abundant, environmentally benign, and inexpensive. In addition, CZTS has a band gap of ˜1.5 eV, the ideal value for converting the maximum amount of energy from the solar spectrum into electricity. CZTS has a high absorption coefficient (>104 cm-1 in the visible region of the electromagnetic spectrum) and only a few micron thick layer of CZTS can absorb all the photons with energies above its band gap. CZT(S,Se) solar cells have already reached power conversion efficiencies >10%. One of the ways to improve upon the CZTS power conversion efficiency is by using CZTS quantum dots as the photoactive material, which can potentially achieve efficiencies greater than the present thin film technologies at a fraction of the cost. However, two requirements for quantum-dot solar cells have yet to be demonstrated. First, no report has shown quantum confinement in CZTS nanocrystals. Second, the syntheses to date have not provided a range of nanocrystal sizes, which is necessary not only for fundamental studies but also for multijunction photovoltaic architectures. We resolved these two issues by demonstrating a simple synthesis of CZTS, Cu2SnS3, and alloyed (Cu2SnS3) x(ZnS)y nanocrystals with diameters ranging from 2 to 7 nm from diethyldithiocarbamate complexes. As-synthesized nanocrystals were characterized using high resolution transmission electron microscopy, X-ray diffraction, Raman spectroscopy, and energy dispersive spectroscopy to confirm their phase purity. Nanocrystals of diameter less than 5 nm were found to exhibit a shift in their optical absorption spectra towards higher energy consistent with quantum confinement and previous theoretical predictions. Thin films from CZTS nanocrystals deposited on Mo-coated quartz substrates using drop casting were found to be continuous

  11. V2O5 thin film deposition for application in organic solar cells

    NASA Astrophysics Data System (ADS)

    Arbab, Elhadi A. A.; Mola, Genene Tessema

    2016-04-01

    Vanadium pentoxide V2O5 films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V2O5 films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V2O5 as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V2O5 buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS.

  12. Annealing effects on electrical properties of pure and tin-doped indium oxide thin films.

    PubMed

    Kato, Kazuhiro; Omoto, Hideo; Yonekura, Masaaki

    2012-12-01

    The annealing effects on the properties of ITO and pure In2O3 thin films have been investigated. The thin films were deposited with various O2 flow ratios to total gas flow by pulsed dc magnetron sputtering. The post-deposition annealing of the thin films was carried out for 30 minutes at various temperatures ranging up to 500 degrees C in air. It was found through the comparison of the carrier density of ITO and In2O3 thin films that the carrier electrons of the ITO thin films came from both of the dopant Sn and oxygen vacancies under the annealing less than 400 degrees C. Therefore, the ITO thin films deposited with lower O2 flow ratio exhibited higher carrier density due to many oxygen vacancies; in consequence, they exhibited lower resistivity at the annealing up to 400 degrees C. On the other hand, the carrier density of ITO thin films was almost identical regardless of O2 flow ratio when they were annealed at 500 degrees C. This fact indicates that most carrier electrons of the ITO thin films were brought by the dopant Sn at the annealing temperature of 500 degrees C. However, the ITO thin films deposited with lower O2 flow ratio exhibited higher Hall mobility; as a result, they showed lower resistivity at the annealing of 500 degrees C. Atomic force microscope, X-ray diffraction and X-ray reflectivity measurements revealed that the ITO thin films deposited with lowe O2 flow ratio exhibited dense structure even after they were annealed at 500 degrees C. Hence, the carrier electrons of the dense ITO thin films deposited with low O2 flow ratio can conduct better, as a result, the ITO thin films exhibited high Hall mobility and low resistivity.

  13. Physical Vapor Deposition of Thin Films

    NASA Astrophysics Data System (ADS)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  14. Self-consistent modelling of X-ray photoelectron spectra from air-exposed polycrystalline TiN thin films

    NASA Astrophysics Data System (ADS)

    Greczynski, G.; Hultman, L.

    2016-11-01

    We present first self-consistent modelling of x-ray photoelectron spectroscopy (XPS) Ti 2p, N 1s, O 1s, and C 1s core level spectra with a cross-peak quantitative agreement for a series of TiN thin films grown by dc magnetron sputtering and oxidized to different extent by varying the venting temperature Tv of the vacuum chamber before removing the deposited samples. So-obtained film series constitute a model case for XPS application studies, where certain degree of atmosphere exposure during sample transfer to the XPS instrument is unavoidable. The challenge is to extract information about surface chemistry without invoking destructive pre-cleaning with noble gas ions. All TiN surfaces are thus analyzed in the as-received state by XPS using monochromatic Al Kα radiation (hν = 1486.6 eV). Details of line shapes and relative peak areas obtained from deconvolution of the reference Ti 2p and N 1 s spectra representative of a native TiN surface serve as an input to model complex core level signals from air-exposed surfaces, where contributions from oxides and oxynitrides make the task very challenging considering the influence of the whole deposition process at hand. The essential part of the presented approach is that the deconvolution process is not only guided by the comparison to the reference binding energy values that often show large spread, but in order to increase reliability of the extracted chemical information the requirement for both qualitative and quantitative self-consistency between component peaks belonging to the same chemical species is imposed across all core-level spectra (including often neglected O 1s and C 1s signals). The relative ratios between contributions from different chemical species vary as a function of Tv presenting a self-consistency check for our model. We propose that the cross-peak self-consistency should be a prerequisite for reliable XPS peak modelling as it enhances credibility of obtained chemical information, while relying

  15. Inkjet-printing of antimony-doped tin oxide (ATO) films for transparent conducting electrodes.

    PubMed

    Lim, Jongwoo; Jeong, Bong Yong; Yoon, Ho Gyu; Lee, Sung-Nam; Kim, Jihoon

    2012-02-01

    Antimony-doped Tin oxide (ATO) films have been prepared by inkjet-printing method using ATO nanoparticle inks. The electrical and optical properties of the ATO films were investigated in order to understand the effects of rapid thermal annealing (RTA) temperatures. The decrease in the sheet resistance and resistivity of the inkjet-printed ATO films was observed as the annealing temperature increased. The film annealed at 700 degrees C showed the sheet resistance of 1.7 x 10(3) Omega/sq with the film thickness of 350 nm. The optical transmittance of the films remained constant regardless of their annealing temperatures. In order to further reduce the sheet resistance of the films as well as the annealing temperature, Ag-grid was printed in between two layers of inkjet-printed ATO. With 1.5 mm Ag line spacing, the Ag-grid embedded ATO film showed the sheet resistance of 25.6 Omega/sq after RTA at 300 degrees C.

  16. Ultrasound-Assisted Deposition Of Dielectric Films

    NASA Astrophysics Data System (ADS)

    Hwangbo, C. K.; Jacobson, M. R.; Macleod, H. A.; Potoff, R. H.

    1986-12-01

    The effects of ultrasound-assisted deposition (UAD) of ZrOx , Ta0x , and MgFx films on their optical properties have been investigated. The direction of vibration is transverse to the direction of growing films on substrates that are glued to tubular piezoelectric transducers driven by a power amplifier. Results indicate that ultrasonic powers above 20 W/cm2 are required to induce detectable changes in UV absorption and vacuum-to-air shifts of spectral profiles. UAD is likely to induce oxygen and fluoride deficiencies in oxide and fluoride films and increase the packing density of films. No significant changes between UAD and conventional films were observed in x-ray diffraction analysis, humidity testing, and Nomarski microscopy.

  17. F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

    NASA Astrophysics Data System (ADS)

    Xu, M. Y.; Li, J.; Lilge, L. D.; Herman, P. R.

    2006-10-01

    This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F2 laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm2 to an optimized single pulse fluence of 4.5 J/cm2 for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F2 laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics.

  18. Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

    NASA Astrophysics Data System (ADS)

    Nyoung Jang, Jin; Jong Lee, You; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo

    2016-06-01

    In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.

  19. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    SciTech Connect

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-09-28

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  20. Synthesis and characterization of one-dimensional nanostructured fluorine-doped tin dioxide thin films

    NASA Astrophysics Data System (ADS)

    Murakami, Kenji; Bandara, Ajith; Okuya, Masayuki; Shimomura, Masaru; Rajapakse, R. M. G.

    2016-09-01

    This paper describes preparation and characterization of the optically-transparent and electrically conducting thin films of fluoride-doped tin dioxide (FTO) one-dimensional nanostructures and features of the purpose-built, novel and advanced version of spray pyrolysis technique, known as Rotational, Pulsed and Atomized Spray Pyrolysis. This technique allows perfect and simple control of morphology of the nanostructures of FTO layer by adjusting the spray conditions. Effect of the different additives on crystal morphology and texture of the 1-dimensional (1-D) nanostructured FTO thin films is studied. Vertically aligned and well separated nanotubes are easily fabricated using propanone and ethanol as additives. We suggest that propanone additive plays a role to form vertically aligned nanotubes with (101) preferential orientation while (110) face is the predominant plane of well separated nanotubes with ethanol additive. The conductivity of the 1-D nanostructured thin films are also enhanced using the commercial FTO glasses as a substrate.

  1. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    NASA Astrophysics Data System (ADS)

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-09-01

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  2. Hybrid composite thin films composed of tin oxide nanoparticles and cellulose

    NASA Astrophysics Data System (ADS)

    Mahadeva, Suresha K.; Nayak, Jyoti; Kim, Jaehwan

    2013-07-01

    This paper reports the preparation and characterization of hybrid thin films consisting of tin oxide (SnO2) nanoparticles and cellulose. SnO2 nanoparticle loaded cellulose hybrid thin films were fabricated by a solution blending technique, using sodium dodecyl sulfate as a dispersion agent. Scanning and transmission electron microscopy studies revealed uniform dispersion of the SnO2 nanoparticles in the cellulose matrix. Reduction in the crystalline melting transition temperature and tensile properties of cellulose was observed due to the SnO2 nanoparticle loading. Potential application of these hybrid thin films as low cost, flexible and biodegradable humidity sensors is examined in terms of the change in electrical resistivity of the material exposed to a wide range of humidity as well as its response-recovery behavior.

  3. Photobiomolecular deposition of metallic particles and films

    DOEpatents

    Hu, Zhong-Cheng

    2005-02-08

    The method of the invention is based on the unique electron-carrying function of a photocatalytic unit such as the photosynthesis system I (PSI) reaction center of the protein-chlorophyll complex isolated from chloroplasts. The method employs a photo-biomolecular metal deposition technique for precisely controlled nucleation and growth of metallic clusters/particles, e.g., platinum, palladium, and their alloys, etc., as well as for thin-film formation above the surface of a solid substrate. The photochemically mediated technique offers numerous advantages over traditional deposition methods including quantitative atom deposition control, high energy efficiency, and mild operating condition requirements.

  4. Preparation and characterization of indium tin oxide films by sol-gel method

    NASA Astrophysics Data System (ADS)

    Ciuciumis, Alina; Cernica, Ileana

    2007-05-01

    Sol-gel technology is a relatively simple and cheap process to deposit oxides under thin film form out of a sol. The experiments were developed in order to obtain nanomaterials by sol-gel method; nanomaterials that mixed with resin and additives can be deposited in thin and uniform films by spraying on different lignocellulosic composite surfaces. This method assures a functional finishing of the nanomaterials. These films are transparent and the surfaces are flat with no cracks. The influence of substrate type, morphology of the films and of the substrates before and after deposition was studied by means of optical microscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The sol-gel deposit on the lignocellulosic composite substrates lowered the sorption rates of water and water vapours.

  5. Investigation of surface phase formation during tin-rich growth of Copper2ZincTinSulfer4 polycrystlalline thin films for solar cells

    NASA Astrophysics Data System (ADS)

    Bolke, Joseph Glenn

    Cu2ZnSnS4 (CZTS) is a semiconductor material made of nontoxic, earth abundant elements, making it a promising topic of research for absorber layers in thin film solar cells. We observed that rapid thermal annealing of tin (Sn)-rich co-sputtered CZTS films resulted in crystalline, hexagonal platelets of tin-disulfide (SnS2) 5-30 µm long at the surface of the film. In this work, the formation mechanisms of these surface crystallites and their implications for CZTS absorber layer processing were investigated. The formation and decomposition of these platelets were studied by observing the changes in their structural, morphological, compositional, and vibrational properties accompanying the imposition of lateral temperature gradients as well as different annealing atmospheres. The homogeneous co-sputtered films were annealed in a graphite boat in a quartz reactor using a base heater and halogen lamp. Interrupting annealings to examine stages of crystal formation showed at around 400 °C SnS2 began to form on the surface of films. Near the edges of the film, where temperatures were found to be higher, crystals melted into an amorphous unknown tin-sulfide phase. Diffusion of species from the film into the base of the crystals formed long CZTS grains of which the amorphous phase left behind as it coalesced. Annealing without sulfur (S) increased Sn and S losses from the film and increased the number of crystals nucleated on the surface of the film. For solar cell device applications of CZTS thin films, removal of these SnS2 surface crystallites is necessary; thus wet chemical and thermal decomposition etching techniques were studied. Wet etching attempts with KCN and NH4OH solutions did little to etch crystals. HCl solution damaged the CZTS film as much as the crystals and therefore was also unsuitable. Thermal etching by evacuating the chamber near the end of annealing transformed the SnS2 crystals into a grainy, S-poor Sn phase via the decomposition of SnS2 by removing

  6. The Role of Silver in Mitigation of Whisker Formation on Thin Tin Films

    NASA Astrophysics Data System (ADS)

    Stein, J.; Rehm, S.; Welzel, U.; Huegel, W.; Mittemeijer, E. J.

    2014-11-01

    The mitigating effect of alloying Sn thin films with Ag on the formation of Sn whiskers was investigated by time-resolved investigations employing x-ray diffraction for phase and stress analyses and focused ion beam microscopy for morphological characterization of the surfaces and cross-sections of the specimens. The investigated Sn-6 wt.%Ag thin films were prepared by galvanic co-deposition. The results are compared with those obtained from investigation of pure Sn films and discussed with regard to current whisker-growth models. The simultaneous deposition of Sn and Ag leads to a fine-grained microstructure consisting of columnar and equiaxed grains, i.e. an imperfect columnar Sn film microstructure. Isolated Ag3Sn grains are present at the Sn grain boundaries in the as-deposited films. Pronounced grain growth was observed during aging at room temperature, which provides a global stress relaxation mechanism that prevents Sn whisker growth.

  7. Organosilane-functionalization of nanostructured indium tin oxide films.

    PubMed

    Pruna, R; Palacio, F; Martínez, M; Blázquez, O; Hernández, S; Garrido, B; López, M

    2016-12-06

    Fabrication and organosilane-functionalization and characterization of nanostructured ITO electrodes are reported. Nanostructured ITO electrodes were obtained by electron beam evaporation, and a subsequent annealing treatment was selectively performed to modify their crystalline state. An increase in geometrical surface area in comparison with thin-film electrodes area was observed by atomic force microscopy, implying higher electroactive surface area for nanostructured ITO electrodes and thus higher detection levels. To investigate the increase in detectability, chemical organosilane-functionalization of nanostructured ITO electrodes was performed. The formation of 3-glycidoxypropyltrimethoxysilane (GOPTS) layers was detected by X-ray photoelectron spectroscopy. As an indirect method to confirm the presence of organosilane molecules on the ITO substrates, cyclic voltammetry and electrochemical impedance spectroscopy (EIS) were also carried out. Cyclic voltammograms of functionalized ITO electrodes presented lower reduction-oxidation peak currents compared with non-functionalized ITO electrodes. These results demonstrate the presence of the epoxysilane coating on the ITO surface. EIS showed that organosilane-functionalized electrodes present higher polarization resistance, acting as an electronic barrier for the electron transfer between the conductive solution and the ITO electrode. The results of these electrochemical measurements, together with the significant difference in the X-ray spectra between bare ITO and organosilane-functionalized ITO substrates, may point to a new exploitable oxide-based nanostructured material for biosensing applications. As a first step towards sensing, rapid functionalization of such substrates and their application to electrochemical analysis is tested in this work. Interestingly, oxide-based materials are highly integrable with the silicon chip technology, which would permit the easy adaptation of such sensors into lab

  8. Structure, stability and electrochromic properties of polyaniline film covalently bonded to indium tin oxide substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Wenzhi; Ju, Wenxing; Wu, Xinming; Wang, Yan; Wang, Qiguan; Zhou, Hongwei; Wang, Sumin; Hu, Chenglong

    2016-03-01

    Indium tin oxide (ITO) substrate was modified with 4-aminobenzylphosphonic acid (ABPA), and then the polyaniline (PANI) film covalently bonded to ITO substrate was prepared by the chemical oxidation polymerization. X-ray photoelectron spectroscopy (XPS), attenuated total reflection infrared (ATR-IR) spectroscopy, and atomic force microscopy (AFM) measurements demonstrated that chemical binding was formed between PANI and ABPA-modified ITO surface, and the maximum thickness of PANI layer is about 30 nm. The adhesive strength of PANI film on ITO substrate was tested by sonication. It was found that the film formed on the modified ITO exhibited a much better stability than that on bare one. Cyclic voltammetry (CV) and UV-vis spectroscopy measurements indicated that the oxidative potentials of PANI film on ABPA-modified ITO substrate were decreased and the film exhibited high electrochemical activities. Moreover, the optical contrast increased from 0.58 for PANI film (without ultrasound) to 1.06 for PANI film (after ultrasound for 60 min), which had an over 83% enhancement. The coloration time was 20.8 s, while the bleaching time was 19.5 s. The increase of electrochromic switching time was due to the lower ion diffusion coefficient of the large cation of (C4H9)4N+ under the positive and negative potentials as comparison with the small Li+ ion.

  9. Controllable nitrogen doping in as deposited TiO{sub 2} film and its effect on post deposition annealing

    SciTech Connect

    Deng, Shaoren; Devloo-Casier, Kilian; Devulder, Wouter; Dendooven, Jolien; Deduytsche, Davy; Detavernier, Christophe; Lenaerts, Silvia; Martens, Johan A.; Van den Berghe, Sven

    2014-01-15

    In order to narrow the band gap of TiO{sub 2}, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO{sub 2} and plasma enhanced atomic layer deposition (PEALD) of TiN has been implemented. By altering the ratio between TALD TiO{sub 2} and PEALD TiN, the as synthesized TiO{sub x}N{sub y} films showed different band gaps (from 1.91 eV to 3.14 eV). In situ x-ray diffraction characterization showed that the crystallization behavior of these films changed after nitrogen doping. After annealing in helium, nitrogen doped TiO{sub 2} films crystallized into rutile phase while for the samples annealed in air a preferential growth of the anatase TiO{sub 2} along (001) orientation was observed. Photocatalytic tests of the degradation of stearic acid were done to evaluate the effect of N doping on the photocatalytic activity.

  10. Structure Orientation in Phthalocyanine Film Growth by Vapor Deposition in Electrical Fields

    NASA Technical Reports Server (NTRS)

    Banks, C. E.; Zhu, S.; Frazier, D. O.; Penn, B. G.; Abdeldayem, H. A.; Sharma, A.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Films of phthalocyanines were grown by vapor deposition in an electric field on to quartz substrates coated with a very thin layer of gold or indium tin oxide and compared to films grown in the absence of an electric field. A comparison of morphology, nonlinear optical properties, and crystal structure was also made. The films were characterized using scanning electron microscopy, x-ray diffraction, and FTIR. Films grown in the absence of an electric field had a fiber like morphology and those grown in electric fields having a maximum strength of 4000 V/cm had a dense-columnar structure. The crystal structure of films grown in an electric field was different than those grown in the absence of a field.

  11. Electrochemical impedance analysis of spray deposited CZTS thin film: Effect of Se introduction

    NASA Astrophysics Data System (ADS)

    Patil, Swati J.; Lokhande, Vaibhav C.; Lee, Dong-Weon; Lokhande, Chandrakant D.

    2016-08-01

    The present work deals with electrochemical impedance analysis of spray deposited Cu2ZnSnS4 (CZTS) thin films grown on fluorine doped tin oxide (FTO) substrates and effect of post Se introduction. The CZTS thin films are characterized using X-ray diffraction (XRD), X-Ray photo spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM) and UV-Vis spectroscopy techniques. The electrochemical measurements are carried out using impedance analysis spectroscopy. The strong peak in XRD pattern along (112) plane confirms the Kestrite crystal structure of CZTS film. The FE-SEM analysis reveals that nanoflakes contain crack-free surface microstructure changes with post Se introucation. The optical study reveals that absorption increases with Se dipping time and observed lower band gap of 1.31 eV. Introduction of Se in CZTS film results an improvement in the grain size and surface morphology which leads to increased electrical conductivity of CZTS film.

  12. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    DOE PAGES

    Leng, X.; Bozovic, I.; Bollinger, A. T.

    2016-08-10

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a puremore » electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.« less

  13. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    PubMed Central

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-01-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths. PMID:27667259

  14. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films.

    PubMed

    Leng, X; Bollinger, A T; Božović, I

    2016-08-10

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.

  15. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    SciTech Connect

    Leng, X.; Bozovic, I.; Bollinger, A. T.

    2016-08-10

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.

  16. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    NASA Astrophysics Data System (ADS)

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-09-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths.

  17. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates.

    PubMed

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G

    2016-09-26

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10-180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400-1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths.

  18. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    PubMed Central

    Leng, X.; Bollinger, A. T.; Božović, I.

    2016-01-01

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices. PMID:27506371

  19. Heterotermetallic indium lithium halostannates: low-temperature single-source precursors for tin-rich indium tin oxides and their application for thin-film transistors.

    PubMed

    Samedov, Kerim; Aksu, Yilmaz; Driess, Matthias

    2012-06-18

    The syntheses and structural elucidation of dimeric [Sn(OCyHex)(2)] (1), its corresponding (cyclohexoxy)alkalistannates(II) [{M(OCyHex)(3)Sn}(2)] (M = Li (2), Na (3), K (4)), and of the first heteroleptic heterotermetallic Li/In/Sn-haloalkoxide clusters [X(2)In{LiSn(2)(OCyHex)(6)}] (X = Br (5), Cl (6)) with a double seco-norcubane core are reported. They represent suitable precursors for new amorphous indium tin oxide (ITO) materials as transparent conducting oxides with drastically reduced concentrations of expensive indium, while maintaining their high electrical performance. In fact, compounds 5 and 6 were successfully degraded under dry synthetic air at relatively low temperature, resulting in new semiconducting tin-rich ITOs homogeneously dispersed in a tin oxide/lithium oxide matrix. The obtained particles were investigated and characterised by different analytical techniques, such as powder XRD, IR spectroscopy, SEM, TEM and energy-dispersive X-ray spectroscopy (EDX). The analytical data confirm that the final materials consist of tin-containing indium oxide embedded in an amorphous tin oxide matrix. The typical broadening and shift of the observed indium oxide reflections to higher 2θ values in the powder XRD pattern clearly indicated that tin centres were successfully incorporated into the In(2)O(3) lattice and partially occupied In(3+) sites. Investigations by EDX mapping proved that Sn was homogeneously distributed in the final materials. Thin-film field-effect transistors (FETs) were fabricated by spin-coating of silicon wafers with solutions of 5 in toluene and subsequent calcination under dry air (25-700 °C). The FETs prepared with precursor 5 exhibited excellent performances, as shown by a charge-carrier mobility of 6.36×10(-1)  cm(2)  V(-1)  s (calcination at 250 °C) and an on/off current ratio of 10(6).

  20. (Chemically vapor deposited diamond films)

    SciTech Connect

    Clausing, R.E.; Heatherly, L. Jr.

    1990-09-22

    The NATO-ASI on Diamond and Diamond-Like Films and Coatings'' was an opportunity for us to learn the latest research results from ongoing programs in the leading laboratories of the world and relate them to our work. Specific examples are given in the comprehensive report which follows. The meeting format provided an ideal environment to meet and interact with our international counterparts. It is clear that our studies are well regarded, and that we have established an excellent reputation in a short time. New opportunities for collaboration were identified. A panel discussion at the end of the meeting addressed the needs and opportunities in the synthesis of CVD diamond. The key scientific needs are those related to modeling the nucleation and growth processes and to elucidation of the critical roles of atomic hydrogen and the mechanisms of carbon addition to the growing surfaces. The development and more extensive use of in situ diagnostics for both surface and gas phases are important to solving these issues. The more immediate practical questions concern the identification of the growth-rate-limiting steps, the relation of growth parameters to the resulting film structure, and the dependence of properties on structure.

  1. Venting temperature determines surface chemistry of magnetron sputtered TiN films

    SciTech Connect

    Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

    2016-01-25

    Surface properties of refractory ceramic transition metal nitride thin films grown by magnetron sputtering are essential for resistance towards oxidation necessary in all modern applications. Here, typically neglected factors, including exposure to residual process gases following the growth and the venting temperature T{sub v}, each affecting the surface chemistry, are addressed. It is demonstrated for the TiN model materials system that T{sub v} has a substantial effect on the composition and thickness-evolution of the reacted surface layer and should therefore be reported. The phenomena are also shown to have impact on the reliable surface characterization by x-ray photoelectron spectroscopy.

  2. Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide.

    PubMed

    Mackus, Adriaan J M; MacIsaac, Callisto; Kim, Woo-Hee; Bent, Stacey F

    2017-02-07

    For atomic layer deposition (ALD) of doped, ternary, and quaternary materials achieved by combining multiple binary ALD processes, it is often difficult to correlate the material properties and growth characteristics with the process parameters due to a limited understanding of the underlying surface chemistry. In this work, in situ Fourier transform infrared (FTIR) spectroscopy was employed during ALD of zinc-oxide, tin-oxide, and zinc-tin-oxide (ZTO) with the precursors diethylzinc (DEZ), tetrakis(dimethylamino)tin (TDMASn), and H2O. The main aim was to investigate the molecular basis for the nucleation delay during ALD of ZTO, observed when ZnO ALD is carried out after SnO2 ALD. Gas-phase FTIR spectroscopy showed that dimethylamine, the main reaction product of the SnO2 ALD process, is released not only during SnO2 ALD but also when depositing ZnO after SnO2, indicating incomplete removal of the ligands of the TDMASn precursor from the surface. Transmission FTIR spectroscopy performed during ALD on SiO2 powder revealed that a significant fraction of the ligands persist during both SnO2 and ZnO ALD. These observations provide experimental evidence for a recently proposed mechanism, based on theoretical calculations, suggesting that the elimination of precursor ligands is often not complete. In addition, it was found that the removal of precursor ligands by H2O exposure is even less effective when ZnO ALD is carried out after SnO2 ALD, which likely causes the nucleation delay in ZnO ALD during the deposition of ZTO. The underlying mechanisms and the consequences of the incomplete elimination of precursor ligands are discussed.

  3. Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide

    NASA Astrophysics Data System (ADS)

    Mackus, Adriaan J. M.; MacIsaac, Callisto; Kim, Woo-Hee; Bent, Stacey F.

    2017-02-01

    For atomic layer deposition (ALD) of doped, ternary, and quaternary materials achieved by combining multiple binary ALD processes, it is often difficult to correlate the material properties and growth characteristics with the process parameters due to a limited understanding of the underlying surface chemistry. In this work, in situ Fourier transform infrared (FTIR) spectroscopy was employed during ALD of zinc-oxide, tin-oxide, and zinc-tin-oxide (ZTO) with the precursors diethylzinc (DEZ), tetrakis(dimethylamino)tin (TDMASn), and H2O. The main aim was to investigate the molecular basis for the nucleation delay during ALD of ZTO, observed when ZnO ALD is carried out after SnO2 ALD. Gas-phase FTIR spectroscopy showed that dimethylamine, the main reaction product of the SnO2 ALD process, is released not only during SnO2 ALD but also when depositing ZnO after SnO2, indicating incomplete removal of the ligands of the TDMASn precursor from the surface. Transmission FTIR spectroscopy performed during ALD on SiO2 powder revealed that a significant fraction of the ligands persist during both SnO2 and ZnO ALD. These observations provide experimental evidence for a recently proposed mechanism, based on theoretical calculations, suggesting that the elimination of precursor ligands is often not complete. In addition, it was found that the removal of precursor ligands by H2O exposure is even less effective when ZnO ALD is carried out after SnO2 ALD, which likely causes the nucleation delay in ZnO ALD during the deposition of ZTO. The underlying mechanisms and the consequences of the incomplete elimination of precursor ligands are discussed.

  4. Effect of process parameters on properties of argon–nitrogen plasma for titanium nitride film deposition

    SciTech Connect

    Saikia, Partha; Kakati, Bharat

    2013-11-15

    In this study, the effect of working pressure and input power on the physical properties and sputtering efficiencies of argon–nitrogen (Ar/N{sub 2}) plasma in direct current magnetron discharge is investigated. The discharge in Ar/N{sub 2} is used to deposit TiN films on high speed steel substrate. The physical plasma parameters are determined by using Langmuir probe and optical emission spectroscopy. On the basis of the different reactions in the gas phase, the variation of plasma parameters and sputtering rate are explained. A prominent change of electron temperature, electron density, ion density, and degree of ionization of Ar is found as a function of working pressure and input power. The results also show that increasing working pressure exerts a negative effect on film deposition rate while increasing input power has a positive impact on the same. To confirm the observed physical properties and evaluate the texture growth as a function of deposition parameters, x-ray diffraction study of deposited TiN films is also done.

  5. Studies of Niobium Thin Film Produced by Energetic Vacuum Deposition

    SciTech Connect

    Genfa Wu; Anne-Marie Valente; H. Phillips; Haipeng Wang; Andy Wu; T. J. Renk; P Provencio

    2004-05-01

    An energetic vacuum deposition system has been used to study deposition energy effects on the properties of niobium thin films on copper and sapphire substrates. The absence of working gas avoids the gaseous inclusions commonly seen with sputtering deposition. A biased substrate holder controls the deposition energy. Transition temperature and residual resistivity ratio of the niobium thin films at several deposition energies are obtained together with surface morphology and crystal orientation measurements by AFM inspection, XRD and TEM analysis. The results show that niobium thin films on sapphire substrate exhibit the best cryogenic properties at deposition energy around 123 eV. The TEM analysis revealed that epitaxial growth of film was evident when deposition energy reaches 163 eV for sapphire substrate. Similarly, niobium thin film on copper substrate shows that film grows more oriented with higher deposition energy and grain size reaches the scale of the film thickness at the deposition energy around 153 eV.

  6. Ultra-Smooth As-Deposited Optical Films

    DTIC Science & Technology

    2007-11-02

    thin films with state-of-the-art properties , specifically ultrasmooth surfaces, high packing density, refractive index close... properties of thin films ; in particular, the surface roughness of the thin films . And secondarily, the lifetime of the Cs source is important. In other... Film Deposition Initially, the deposition system was utilized to deposit single layer thin films of titanium oxide ( TiO2 ) and silicon oxide

  7. RBS and PIXE analysis of chlorine contamination in ALD-Grown TiN films on silicon

    SciTech Connect

    Meersschaut, J.; Witters, T.; Kaeyhkoe, M.; Lenka, H. P.; Vandervorst, W.; Zhao, Q.; Vantomme, A.

    2013-04-19

    The performance, strengths and limitations of RBS and PIXE for the characterization of trace amounts of Cl in TiN thin films are critically compared. The chlorine atomic concentration in ALD grown TiN thin films on Si is determined for samples grown at temperatures ranging from 350 Degree-Sign C to 550 Degree-Sign C. We show that routine Rutherford backscattering spectrometry measurements (1.5 MeV He{sup +}) and PIXE measurements (1.5 MeV H{sup +}) on 20 nm thick TiN films allow one to determine the Cl content down to 0.3 at% with an absolute statistical accuracy reaching 0.03 at%. Possible improvements to push the sensitivity limit for both approaches are proposed.

  8. Application of indium tin oxide (ITO) thin film as a low emissivity film on Ni-based alloy at high temperature

    NASA Astrophysics Data System (ADS)

    Sun, Kewei; Zhou, Wancheng; Tang, Xiufeng; Luo, Fa

    2016-09-01

    Indium tin oxide (ITO) films as the low emissivity coatings of Ni-based alloy at high temperature were studies. ITO films were deposited on the polished surface of alloy K424 by direct current magnetron sputtering. These ITO-coated samples were heat-treated in air at 600-900 °C for 150 h to explore the effect of high temperature environment on the emissivity. The samples were analyzed by X-ray diffraction (XRD), SEM and EDS. The results show that the surface of sample is integrity after heat processing at 700 °C and below it. A small amount of fine crack is observed on the surface of sample heated at 800 °C and Ti oxide appears. There are lots of fine cracks on the sample annealed at 900 °C and a large number of various oxides are detected. The average infrared emissivities at 3-5 μm and 8-14 μm wavebands were tested by an infrared emissivity measurement instrument. The results show the emissivity of the sample after annealed at 600 and 700 °C is still kept at a low value as the sample before annealed. The ITO film can be used as a low emissivity coating of super alloy K424 up to 700 °C.

  9. Plasma-enhanced chemical vapor deposition of tungsten films

    NASA Astrophysics Data System (ADS)

    Chu, J. K.; Tang, C. C.; Hess, D. W.

    1982-07-01

    High-purity films of tungsten are deposited from tungsten hexafluoride and hydrogen using plasma-enhanced deposition (PED). At 400 °C deposition temperature, resistivities of ˜40 μΩ cm are attained. After annealing at 1100 °C, the resistivity falls to ˜7 μΩ cm. Below 400 °C, the as-deposited film stress is <6×109 dynes/cm2. Tensile, unlike tungsten, molybdenum films deposited by PED displayed high resistivities.

  10. Silicon carbide and other films and method of deposition

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2007-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  11. Silicon carbide and other films and method of deposition

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy (Inventor)

    2011-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  12. Pulsed laser deposition of ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Sengupta, Somnath; McKnight, Steven H.; Sengupta, Louise C.

    1997-05-01

    It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba1- xSrxTiO3, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba0.3Sr0.7TiO3, Ba0.4Sr0.6TiO3, Ba0.5Sr0.5TiO3, Ba0.6Sr0.4TiO3, and Ba0.7Sr0.3TiO3. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

  13. Photoelectrochemical properties of spray deposited n-CdSe thin films

    SciTech Connect

    Yadav, A.A.; Barote, M.A.; Masumdar, E.U.

    2010-05-15

    Polycrystalline cadmium selenide (CdSe) thin films have been prepared by spraying a mixture of an equimolar aqueous solutions of cadmium chloride and selenourea on preheated fluorine doped tin oxide (FTO) coated glass substrates at different substrate temperatures. The cell configuration n-CdSe/1 M (NaOH + Na{sub 2}S + S)/C is used for studying the capacitance-voltage (C-V) characteristics in dark, current-voltage (I-V) characteristics in dark and under illumination, photovoltaic power output and spectral response characteristics of the as deposited films. Photoelectrochemical study shows that as deposited CdSe thin films exhibits n-type of conductivity. The spectral response characteristics of the films at room temperature show a prominent sharp peak at 725 nm. The measured values of efficiency ({eta}) and fill factor (FF) are found to be 0.50% and 0.44 respectively for film deposited at 300 C. Electrochemical impedance spectroscopy studies show that the CdSe film deposited at 300 C shows better performance in PEC cell. (author)

  14. Time and voltage dependences of nanoscale dielectric constant modulation on indium tin oxide films

    NASA Astrophysics Data System (ADS)

    Li, Liang; Hao, Haoyue; Zhao, Hua

    2017-01-01

    The modulation of indium tin oxide (ITO) films through surface charge accumulation plays an important role in many different applications. In order to elaborately study the modulation, we measured the dielectric constant of the modulated layer through examining the excitation of surface plasmon polaritons. Charges were pumped on the surfaces of ITO films through applying high voltage in appropriate directions. Experiments unveiled that the dielectric constant of the modulated layer had large variation along with the nanoscale charge accumulation. Corresponding numerical results were worked out through combining Drude model and Mayadas-Shatzkes model. Based on the above results, we deduced the time and voltage dependences of accumulated charge density, which revealed a long-time charge accumulation process.

  15. Reclaim System Design of Indium Tin Oxide Thin-Film Removal from Color Filters of Displays

    NASA Astrophysics Data System (ADS)

    Pa, Pai-Shan

    2008-09-01

    A newly design precision reclaim system using electrochemical machining as an etching process for indium tin oxide (ITO) thin-film removal from the color filter surface of a displays is presented. Through the ultra precise etching of the nanostructure, the semiconductor industry can effectively recycle defective products, thereby reducing production costs. A large gyration diameter of a cathode combined with a small gap width between the cathode and a workpiece takes less time for the same amount of ITO removed. An adequate feed rate of color filters combined with a sufficient electric power produces fast machining. Pulsed direct current and higher rotational speed of the cathode can improve the effects of dregs discharge and are advantageous to be combined with a high feed rate of workpieces. Electrochemical machining only requires a short time to easily and cleanly remove ITO films.

  16. Polymer waveguide sensor with tin oxide thin film integrated onto optical-electrical printed circuit board

    NASA Astrophysics Data System (ADS)

    Lim, Jung Woon; Kim, Seon Hoon; Kim, Jong-Sup; Kim, Jeong Ho; Kim, Yune Hyoun; Lim, Ju Young; Im, Young-Eun; Park, Jong Bok; Hann, Swook

    2014-05-01

    In this study, we proposed and fabricated optical sensor module integrated onto optical-electrical printed circuit board (PCB) for gas detection based on polymer waveguide with tin oxide thin film. Their potential application as gas sensors are confirmed through computational simulation using the two dimensional finite-difference time-domain method (2DFDTD). Optical-electrical PCB was integrated into vertical cavity surface emitting laser (VCSEL), photodiode and polymeric sensing device was fabricated by the nano-imprint lithography technique. SnO2 thin film of 100nm thickness was placed on the surface of core layer exposed by removing the specific area of the upper cladding layer of 300 μm length and 50 μm width. The performance of the device was measured experimentally. Initial study on the sensor performance for carbon monoxide gas detection indicated good sensitivity.

  17. Apparatus for laser assisted thin film deposition

    DOEpatents

    Warner, Bruce E.; McLean, II, William

    1996-01-01

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  18. Pulsed laser deposition of pepsin thin films

    NASA Astrophysics Data System (ADS)

    Kecskeméti, G.; Kresz, N.; Smausz, T.; Hopp, B.; Nógrádi, A.

    2005-07-01

    Pulsed laser deposition (PLD) of organic and biological thin films has been extensively studied due to its importance in medical applications among others. Our investigations and results on PLD of a digestion catalyzing enzyme, pepsin, are presented. Targets pressed from pepsin powder were ablated with pulses of an ArF excimer laser ( λ = 193 nm, FWHM = 30 ns), the applied fluence was varied between 0.24 and 5.1 J/cm 2. The pressure in the PLD chamber was 2.7 × 10 -3 Pa. The thin layers were deposited onto glass and KBr substrates. Our IR spectroscopic measurements proved that the chemical composition of deposited thin films is similar to that of the target material deposited at 0.5 and 1.3 J/cm 2. The protein digesting capacity of the transferred pepsin was tested by adapting a modified "protein cube" method. Dissolution of the ovalbumin sections proved that the deposited layers consisted of catalytically active pepsin.

  19. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    NASA Astrophysics Data System (ADS)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  20. Substrate heater for thin film deposition

    DOEpatents

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  1. Fabrication of organic-inorganic perovskite thin films for planar solar cells via pulsed laser deposition

    SciTech Connect

    Liang, Yangang; Zhang, Xiaohang; Gong, Yunhui; Shin, Jongmoon; Wachsman, Eric D.; Takeuchi, Ichiro; Yao, Yangyi; Hsu, Wei-Lun; Dagenais, Mario

    2016-01-15

    We report on fabrication of organic-inorganic perovskite thin films using a hybrid method consisting of pulsed laser deposition (PLD) of lead iodide and spin-coating of methylammonium iodide. Smooth and highly crystalline CH{sub 3}NH{sub 3}PbI{sub 3} thin films have been fabricated on silicon and glass coated substrates with fluorine doped tin oxide using this PLD-based hybrid method. Planar perovskite solar cells with an inverted structure have been successfully fabricated using the perovskite films. Because of its versatility, the PLD-based hybrid fabrication method not only provides an easy and precise control of the thickness of the perovskite thin films, but also offers a straightforward platform for studying the potential feasibility in using other metal halides and organic salts for formation of the organic-inorganic perovskite structure.

  2. Boron carbon nitride films deposited by sequential pulses laser deposition

    NASA Astrophysics Data System (ADS)

    Dinescu, M.; Perrone, A.; Caricato, A. P.; Mirenghi, L.; Gerardi, C.; Ghica, C.; Frunza, L.

    1998-05-01

    In this paper, we report the successful growth of c-BCN thin films by reactive pulsed laser ablation (RPLA) of a rotating target (3 Hz) formed of two semidisks: one of h-BN and the other one of graphite, with the substrate at room temperature. The irradiations were performed in vacuum (10 -5 Pa) and in N 2 ambient gas (1-100 Pa) using a XeCl excimer laser ( λ=308 nm, τFWHM=30 ns) with a fluence of 5 J/cm 2. Series of 10,000 pulses at a repetition rate of 10 Hz were directed to target. Different analysis techniques pointed out the synthesis of h-BCN and c-BCN. Microhardness measurements at the deposited films evidence high values up to 2.9 GPa. Secondary ion mass spectroscopy (SIMS) profiles showed the presence of layers of 600-700 nm thickness, with uniform concentrations of B, C and N in the films. Uniform signals of BN and CN, which are related to the BCN bond, are also present. X-ray photoelectron spectroscopy (XPS) studies pointed out the BCN compound formation. The deconvolution of B 1s recorded spectra evidenced a strong peak (centered at 188 eV) assigned to B bonded in BC 2N; the N 1s and C 1s spectra also confirm the BCN formation. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) analysis evidenced the presence of c-BCN phase (with crystallites of 30-80 nm) and h-BCN phase as well. The N 2 pressure strongly influenced the BCN formation and, consequently, the properties of the deposited films.

  3. Investigation of Influence of Gas Ratio on the Electron Temperature in TiN Magnetron Sputtering Deposition System

    DTIC Science & Technology

    2013-07-01

    31st ICPIG, July 14-19, 2013, Granada, Spain Investigation of Influence of Gas Ratio on the Electron Temperature in TiN Magnetron Sputtering ...Iran. In this work, a nanolayer of titanium nitride which produced by the magnetron sputtering system is synthesized. Moreover the effect of...Direct current (DC) sputtering has become a very popular technique to develop a wide variety of thin films including nitrides. Using this method

  4. Fabrication and characterization of the electrical and optical properties of n-type thin film transparent conducting oxides deposited by neutralized ion beam sputtering and pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Vanderford, John D.

    Transparent conducting oxides have become a fundamental electronic material for numerous current technologies and are optimally deposited as a uniform thin film with low electrical resistivity and high optical transmission. The purpose of this study is to characterize the electrical and optical characteristics of three TCO: Indium Tin Oxide (ITO) (95%, 5%), Zinc Oxide (ZnO), and Aluminum doped Zinc Oxide (AZO) (98%, 2%). The deposition techniques of neutralized ion beam sputtering and pulsed laser deposition will be investigated. ITO will be deposited from commercially available sintered targets whereas ZnO and AZO will be deposited from powder pressed targets. The results have shown that AZO deposit AZO from a powder pressed target with comparable electrical and optical properties to that of ITO deposited from a sintered target.

  5. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Karakaya, Seniye; Ozbas, Omer

    2015-02-01

    ZnO is an II-VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO2) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200-1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.

  6. Positron beam study of indium tin oxide films on GaN

    NASA Astrophysics Data System (ADS)

    Cheung, C. K.; Wang, R. X.; Beling, C. D.; Djurisic, A. B.; Fung, S.

    2007-02-01

    Variable energy Doppler broadening spectroscopy has been used to study open-volume defects formed during the fabrication of indium tin oxide (ITO) thin films grown by electron-beam evaporation on n-GaN. The films were prepared at room temperature, 200 and 300 °C without oxygen and at 200 °C under different oxygen partial pressures. The results show that at elevated growth temperatures the ITO has fewer open volume sites and grows with a more crystalline structure. High temperature growth, however, is not sufficient in itself to remove open volume defects at the ITO/GaN interface. Growth under elevated temperature and under partial pressure of oxygen is found to further reduce the vacancy type defects associated with the ITO film, thus improving the quality of the film. Oxygen partial pressures of 6 × 10-3 mbar and above are found to remove open volume defects associated with the ITO/GaN interface. The study suggests that, irrespective of growth temperature and oxygen partial pressure, there is only one type of defect in the ITO responsible for trapping positrons, which we tentatively attribute to the oxygen vacancy.

  7. Deposition of conductive TiN shells on SiO2 nanoparticles with a fluidized bed ALD reactor

    NASA Astrophysics Data System (ADS)

    Didden, Arjen; Hillebrand, Philipp; Wollgarten, Markus; Dam, Bernard; van de Krol, Roel

    2016-02-01

    Conductive TiN shells have been deposited on SiO2 nanoparticles (10-20 nm primary particle size) with fluidized bed atomic layer deposition using TDMAT and NH3 as precursors. Analysis of the powders confirms that shell growth saturates at approximately 0.4 nm/cycle at TDMAT doses of >1.2 mmol/g of powder. TEM and XPS analysis showed that all particles were coated with homogeneous shells containing titanium. Due to the large specific surface area of the nanoparticles, the TiN shells rapidly oxidize upon exposure to air. Electrical measurements show that the partially oxidized shells are conducting, with apparent resistivity of approximately 11 kΩ cm. The resistivity of the powders is strongly influenced by the NH3 dose, with a smaller dose giving an order-of-magnitude higher resistivity.

  8. Sputter-deposited TiN electrode coatings for superior sensing and pacing performance.

    PubMed

    Schaldach, M; Hubmann, M; Weikl, A; Hardt, R

    1990-12-01

    The sensing and pacing performance of pacemaker electrodes is characterized by the electrochemical properties of the electrode/tissue interface affecting tissue reactions and the kinetics of the ionic exchange. The usually smooth metallic electrode surface results in a high pass filter characteristic. To better match the electrode's filter characteristic to the spectral content of the depolarization signal, various combinations of electrode shape, material and surface structure have been researched. The electrode with sputter-deposited TiN coating presented in this report has been designed to meet the demand for low acute as well as chronic thresholds and superior sensing performance not only with respect to spontaneous activity but also regarding the detection of the evoked response. The clinical results obtained with this electrode prove the excellent pacing and sensing properties resulting from minimized polarization losses and optimized filtering of the signal to be detected, respectively. The acute and chronic clinical advantages over previous concepts are attributed mainly to the biocompatibility of the material used and the microcrystalline surface structure achieved by the coating process. The design concept of the new electrode is presented together with the clinical results obtained. While the advancements in microelectronics and battery technology have certainly formed the basis for the development of pulse generators featuring an ever increasing versatility of functions at the same or even smaller pacemaker dimensions, from a point of view of pacing system performance the development of improved electrode concepts as the one presented must be regarded as equally indispensable.

  9. Hybrid films with graphene oxide and metal nanoparticles could now replace indium tin oxide.

    PubMed

    Varela-Rizo, Helena; Martín-Gullón, Ignacio; Terrones, Mauricio

    2012-06-26

    Graphene oxide (G-O), a highly oxidized sheet of sp(2)-hybridized carbon with insulating electrical properties, can be transformed into graphene if it is adequately reduced. In the past, researchers believed that reduced G-O (rG-O) could be highly conducting, but it has been shown that the presence of extended vacancies and defects within rG-O negatively affect its electrical transport. Although these observations indicated that rG-O could not be used in the fabrication of any electronic device, in this issue of ACS Nano, Ruoff's group demonstrates that rG-O can indeed be used for producing efficient transparent conducting films (TCFs) if the rG-O material is coupled with Au nanoparticles (Au-NPs) and Ag nanowires (Ag-NWs). The work further demonstrates that these hybrid films containing zero-dimensional (Au-NPs), one-dimensional (Ag-NWs), and two-dimensional (rG-O) elements exhibit high optical transmittance (e.g., 90%) and low sheet resistance (20-30 Ω/□), with values comparable to those of indium tin oxide (ITO) films. In addition, Ruoff's group notes that the presence of Ag-NWs and rG-O in the films showed antibacterial properties, thus demonstrating that it is now possible to produce flexible TCFs with bactericidal functions. The data show that smart hybrid films containing rG-O and different types of NPs and NWs could be synthesized easily and could result in smart films with unprecedented functions and applications.

  10. High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition

    SciTech Connect

    Anders, Andre; Lim, Sunnie H.N.; Yu, Kin Man; Andersson, Joakim; Rosen, Johanna; McFarland, Mike; Brown, Jeff

    2009-04-24

    Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.

  11. Enhancement of physical properties of indium tin oxide deposited by super density arc plasma ion plating by O 2 plasma treatment

    NASA Astrophysics Data System (ADS)

    Kim, Soo Young; Hong, Kihyon; Lee, Jong-Lam; Choi, Kyu Han; Song, Kyu Ho; Ahn, Kyung Chul

    2008-01-01

    Indium tin oxide (ITO) films were deposited on glass by super density arc plasma ion plating (SDAP-IP) method. In X-ray diffraction profiles, no obvious changes were found after O 2 plasma treatment. The transmittance, roughness, X-ray diffraction pattern, and sheet resistance also negligibly changed with O 2 plasma treatment. However, the water contact angle decreased with the O 2 plasma treatment, suggesting the increase of cohesive force between SDAP-IP ITO and organic materials. Synchrotron radiation photoemission spectroscopy showed that O 2 plasma treatment resulted in an increase of SDAP-IP ITO work function. Incorporation of oxygen atoms near the SDAP-IP ITO surface during the O 2 plasma treatment induced a peroxidic ITO surface, increasing the work function.

  12. Theoretical modeling of a self-referenced dual mode SPR sensor utilizing indium tin oxide film

    NASA Astrophysics Data System (ADS)

    Srivastava, Sachin K.; Verma, Roli; Gupta, Banshi D.

    2016-06-01

    A prism based dual mode SPR sensor was theoretically modeled to work as a self-referenced sensor in spectral interrogation scheme. Self-referenced sensing was achieved by sandwiching an indium tin oxide thin film in between the prism base and the metal layer. The proposed sensor possesses two plasmon modes similar to long and short range SPRs (LR- and SR-SPRs) and we have analogically used LRSPR and SRSPR for them. However, these modes do not possess usual long range character due to the losses introduced by the imaginary part of indium tin oxide (ITO) dielectric function. One of the two plasmon modes responds to change in analyte refractive index while the other remains fixed. The influence of various design parameters on the performance of the sensor was evaluated. The performance of the proposed sensor was compared, via control simulations, with established dual mode geometries utilizing silicon dioxide (SiO2), Teflon AF-1600 and Cytop. The design parameters of the established geometries were optimized to obtain self-referenced sensing operation. Trade-offs between the resonance spectral width, minimum reflectivity, shift in resonance wavelength and angle of incidence were examined for optimal design. The present study will be useful in the fabrication of self-referenced sensors where the ambient conditions are not quite stable.

  13. Crystallization kinetics of amorphous tin-doped indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Ow-Yang, Cleva Wan

    The crystallization kinetics of amorphous tin-doped indium oxide thin films grown by dc magnetron sputtering and electron beam evaporation was investigated using time-resolved laser reflectivity in conjunction with TEM analyses. The as-grown films were established to be amorphous using glancing angle x-ray and selected area electron diffraction. The samples were then annealed at temperatures ranging from (˜111-167sp°C) some in a range of environments (oxidizing (Nsb2), strongly oxidizing (air), and reducing (wet/dry forming gas). Gross-sectional TEM analysis reveals a columnar as-sputtered microstructure that is retained after annealing to complete transformation. In contrast a-ITO films grown by evaporation show a uniformly dense microstructure. Annealing evaporated films in air produced films containing a wide distribution in grain sizes, while annealing in the more reducing environments yielded polycrystalline films with a narrow grain size distribution centered at 15 nm. Time-resolved laser reflectivity was an advantageous tool for monitoring the progress of the crystallization transformation because the technique generates quantifiable data while allowing real-time, non-contact observation. Plotting the transformation rate as a function of annealing temperature demonstrated the amorphous-to-crystalline transformation to be a thermally activated process. The energy required to crystallize sputtered a-ITO films in flowing Nsb2 is much lower than that for evaporated alpha-ITO films also in flowing Nsb2. XRD spectra of the as-sputtered a-ITO reveals the presence of an indium metal phase, which is not observed in the as-evaporated a-ITO films. The activation energy is most likely dependent on the presence of In metal, which serves as a catalyst for lowering the energy barrier. This is confirmed by the reduction in energy needed to transform evaporated a-ITO film in a reducing environment. In this study, the pre- and post-anneal microstructures were examined to

  14. Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

    NASA Astrophysics Data System (ADS)

    Nishimura, Tomonori; Xu, Lun; Shibayama, Shigehisa; Yajima, Takeaki; Migita, Shinji; Toriumi, Akira

    2016-08-01

    We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO2. Ferroelectric properties of nondoped HfO2 in TiN/HfO2/TiN stacks are shown in capacitance-voltage and polarization-voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO2 clearly appears by thinning HfO2 film down to ˜35 nm. We directly revealed in thermal treatments that the ferroelectric HfO2 film on TiN was maintained by covering the top surface of HfO2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO2. Thus, it is concluded that the ferroelectricity in nondoped HfO2 in this study was mainly driven by both of top and bottom TiN interfaces.

  15. Deposition of superhard amorphous carbon films by pulsed arc sources

    SciTech Connect

    Scheibe, H.J.; Schultrich, B.; Ziegele, H.; Siemroth, P.

    1996-12-31

    Hydrogen-free amorphous carbon films with hardness comparable to crystalline superhard materials have been deposited by special Pulsed arc techniques. By the combination of very high hardness, low adhesion and high smoothness, these films show superior behaviour in wear and glide applications. The influence of plasma and deposition conditions on these film properties and the choice of optimum conditions are discussed.

  16. Pulsed-laser deposition of crystalline Teflon (PTFE) films

    NASA Astrophysics Data System (ADS)

    Li, S. T.; Arenholz, E.; Heitz, J.; Bäuerle, D.

    1998-01-01

    Thin films of crystalline polytetrafluoroethylene (PTFE) were prepared by pulsed-laser deposition using 248 nm UV-excimer-laser radiation. Pressed powder pellets and bulk PTFE have been employed as target material. The films were analyzed by means of optical polarization microscopy, stylus profilometry, capacity measurements, XRD, and IR spectroscopy. The effect of substrate temperature Ts on the morphology and crystallinity of the films was studied. Films deposited from pressed powder targets at sufficiently high Ts consist mainly of spherulite-like microcrystallites. These films are continuous, pinhole-free, well adherent to the substrate, and have a composition which is similar to that of the target material. It is suggested that film formation is based on laser-assisted material transfer with subsequent melting and crystallization. They are superior to films deposited from PTFE bulk targets, cut from a solid rod, with respect to film morphology, deposition rate, film cohesion, and optical and electrical properties.

  17. Physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2015-09-01

    This paper presents the physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing. The thin films of thickness 500 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing thermal vacuum evaporation technique followed by post-deposition thermal annealing at temperature 450 °C. These films were subjected to the X-ray diffraction (XRD),UV-Vis spectrophotometer, source meter and atomic force microscopy (AFM) for structural, optical, electrical and surface morphological analysis respectively. The X-ray diffraction patterns reveal that the films have zinc-blende structure of single cubic phase with preferred orientation (111) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in brief. The optical band gap is found to be 1.62 eV and 1.52 eV for as-grown and annealed films respectively. The I-V characteristics show that the conductivity is decreased for annealed thin films. The AFM studies reveal that the surface roughness is observed to be increased for thermally annealed films.

  18. Laser Direct Ablation of Indium Tin Oxide Films on Both Sides of Various Substrates.

    PubMed

    Oh, Gi Taek; Kwon, Sang Jik; Han, Jae-Hee; Cho, Eou Sik

    2015-03-01

    We demonstrate ablation of indium tin oxide (ITO) films onto both glass and polyethylene terephthalate (PET) substrates, using a Q-switched diode-pumped neodymium-doped yttrium vanadate laser (Nd:YVO4, λ = 1064 nm) incident on both the front and back sides of the substrate. From scanning electron microscope (SEM) images and depth profile data, ITO patterns that were laser-ablated onto glass from the back side showed a larger abrupt change in the ablated line width than those ablated from the front. However, there were only slight differences in ablated line widths due to the direction of the incident laser beam. We provide a possible explanation in terms of several factors: dispersion of laser beam energy through the substrate, overlapping of each laser beam spot due to scanning speed, and the thickness of glass and PET substrates.

  19. Electro-deposition of superconductor oxide films

    DOEpatents

    Bhattacharya, Raghu N.

    2001-01-01

    Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.

  20. THz behavior of indium-tin-oxide films on p-Si substrates

    SciTech Connect

    Brown, E. R. Zhang, W-D.; Chen, H.; Mearini, G. T.

    2015-08-31

    This paper reports broadband THz free-space transmission measurements and modeling of indium-tin-oxide (ITO) thin films on p-doped Si substrates. Two such samples having ITO thickness of 50 and 100 nm, and DC sheet conductance 260 and 56 Ω/sq, respectively, were characterized between 0.2 and 1.2 THz using a frequency-domain spectrometer. The 50-nm-film sample displayed very flat transmittance over the 1-THz bandwidth, suggesting it is close to the critical THz sheet conductance that suppresses multi-pass interference in the substrate. An accurate transmission-line-based equivalent circuit is developed to explain the effect, and then used to show that the net reflectivity and absorptivity necessarily oscillate with frequency. This has important implications for the use of thin-film metallic coupling layers on THz components and devices, such as detectors and sources. Consistent with previous reported results, the sheet conductance that best fits the THz transmittance data is roughly 50% higher than the DC values for both samples.

  1. Sensitivity and Response of Polyvinyl Alcohol/Tin Oxide Nanocomposite Multilayer Thin Film Sensors.

    PubMed

    Sriram, G; Dhineshbabu, N R; Nithyavathy, N; Saminathan, K; Kaler, K V I S; Rajendran, V

    2016-01-01

    Nanocrystalline Tin Oxide (SnO₂) is Non-Stoichiometric in Nature with Functional Properties Suitable for gas sensing. In this study, SnO₂nanoparticles were prepared by the sol-gel technique, which were then characterised using X-ray diffraction. The nanoparticles showed tetragonal structure with an average crystallite size of 18 nm. The stretching and vibration modes of SnO₂were confirmed using Fourier transform infrared spectroscopy. The size of SnO₂ nanoparticles was determined using particle size analyser, which was found be 60 ± 10 nm on average. The surface morphology of the nanoparticles was investigated using scanning electron microscope, which showed irregular-sized agglomerated SnO₂nanostructures. In addition, primary particle size was evaluated using high-resolution transmission electron microscopy, which was found to be 50 nm on average. The polyvinyl alcohol/SnO₂ composite thin film was prepared on a glass substrate using spin-coating method. The values of band gap energy and electrical conductance of 13-layer thin film were found to be 2.96 eV and 0.0505 mho, respectively. Sulfur dioxide (SO₂) was suitably tailored to verify the sensor response over a concentration range of 10-70 ppm at room temperature. The performance, response, and recovery time of sensors were increased by increasing the layers of the thin film.

  2. Electrophoretically-deposited solid film lubricants

    SciTech Connect

    Dugger, M.T.; Panitz, J.K.J.; Vanecek, C.W.

    1995-04-01

    An aqueous-based process that uses electrophoresis to attract powdered lubricant in suspension to a charged target was developed. The deposition process yields coatings with low friction, complies with environmental safety regulations, requires minimal equipment, and has several advantages over processes involving organic binders or vacuum techniques. This work focuses on development of the deposition process, includes an analysis of the friction coefficient of the material in sliding contact with stainless steel under a range of conditions, and a functional evaluation of coating performance in a precision mechanical device application. Results show that solid lubricant films with friction coefficients as low as 0.03 can be produced. A 0.03 friction coefficient is superior to solid lubricants with binder systems and is comparable to friction coefficients generated with more costly vacuum techniques.

  3. The influence of Atomic Oxygen on the Figure of Merit of Indium Tin Oxide thin Films grown by reactive Dual Ion Beam Sputtering

    NASA Astrophysics Data System (ADS)

    Geerts, Wilhelmus; Simpson, Nelson; Woodall, Allen; Compton, Maclyn

    2014-03-01

    Indium Tin Oxide (ITO) is a transparent conducting oxide that is used in flat panel displays and optoelectronics. Highly conductive and transparent ITO films are normally produced by heating the substrate to 300 Celsius during deposition excluding plastics to be used as a substrate material. We investigated whether high quality ITO films can be sputtered at room temperature using atomic instead of molecular oxygen. The films were deposited by dual ion beam sputtering (DIBS). During deposition the substrate was exposed to a molecular or an atomic oxygen flux. Microscope glass slides and silicon wafers were used as substrates. A 29 nm thick SIO2 buffer layer was used. Optical properties were measured with a M2000 Woollam variable angle spectroscopic ellipsometer. Electrical properties were measured by linear four point probe using a Jandel 4pp setup employing silicon carbide electrodes, high input resistance, and Keithley low bias current buffer amplifiers. The figure of merit (FOM), i.e. the ratio of the conductivity and the average optical absorption coefficient (400-800 nm), was calculated from the optical and electric properties and appeared to be 1.2 to 5 times higher for the samples sputtered with atomic oxygen. The largest value obtained for the FOM was 0.08 reciprocal Ohms. The authors would like to thank the Research Corporation for Financial Support.

  4. A study on linear and non-linear optical constants of Rhodamine B thin film deposited on FTO glass

    NASA Astrophysics Data System (ADS)

    Yahia, I. S.; Jilani, Asim; Abutalib, M. M.; AlFaify, S.; Shkir, M.; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; El-Naggar, A. M.

    2016-06-01

    The aim of this research was to fabricate/deposit the good quality thin film of Rhodamine B dye on fluorine doped tin oxide glass substrate by the low cost spin coating technique and study their linear and nonlinear optical parameters. The thickness of the thin film was measured about 300 nm with alpha step system. The transmittance of the fabricated thin film was found to be above 75% corresponding to the fluorine doped tin oxide layer. The structural analysis was performed with X-rays diffraction spectroscopy. Atomic force microscope showed the topographic image of deposited thin film. Linear optical constant like absorption coefficient, band gap, and extinction index was calculated. The dielectric constant was calculated to know the optical response of Rhodamine B dye over fluorine doped tin oxide substrate. The nonlinear optical constant like linear optical susceptibility χ(1), nonlinear optical susceptibility χ(3), nonlinear refractive index (n2) were calculated by spectroscopic method. This method has advantage over the experimental method like Z-Scan for organic dye base semiconductors for future advance optoelectronics applications like dye synthesis solar cell.

  5. Morphology of TiN thin films grown on MgO(001) by reactive dc magnetron sputtering

    SciTech Connect

    Ingason, A. S.; Magnus, F.; Olafsson, S.; Gudmundsson, J. T.

    2010-07-15

    Thin TiN films were grown by reactive dc magnetron sputtering on single-crystalline MgO(001) substrates at a range of temperatures from room temperature to 600 deg. C. Structural characterization was carried out using x-ray diffraction and reflection methods. TiN films grow epitaxially on the MgO substrates at growth temperatures of 200 deg. C and above. The crystal coherence length determined from Laue oscillations and the Scherrer method agrees with x-ray reflection thickness measurements to 6% and within 3% for growth temperatures of 200 and 600 deg. C, respectively. For lower growth temperatures the films are polycrystalline but highly textured and porous.

  6. Preparation of Thick Magnet Films by the Aerosol Deposition Method

    NASA Astrophysics Data System (ADS)

    Sugimoto, Satoshi

    The aerosol deposition method (ADM) is effective for the preparation of thick films with high deposition rate. We applied this method to fabricate NiZn ferrite or Sm-Fe-N films, which are used for microwave absorbers or permanent magnets, respectively. In this article, the magnetic properties of Sm-Fe-N thick films fabricated by the ADM are introduced and the possibility of the ADM for the fabrication process with high deposition rate is discussed.

  7. The Influence of Plasma Nitriding Pre-Treatment on Tribological Properties of TiN Coatings Deposited by PACVD

    NASA Astrophysics Data System (ADS)

    Mahdipoor, M. S.; Mahboubi, F.; Ahangarani, Sh.; Raoufi, M.; Elmkhah, H.

    2012-06-01

    The aim of this study is to investigate the effect of plasma nitriding pre-treatment (PN) on mechanical and tribological behavior of TiN coatings produced by plasma-assisted chemical vapor deposition (PACVD). The heat treatment of quench and temper was carried out on hot work AISI H11 (DIN 1.2343) steel samples. A group of samples were plasma nitrided at 500 °C for 4 h in an atmosphere containing 25 vol.% nitrogen and 75 vol.% hydrogen. Then TiN layer was deposited on all of samples at 520 °C temperature, 8 kHz frequency, and 33% duty cycle. The microstructural, mechanical, and tribological properties of the coatings were investigated using SEM, WDS, AFM, microhardness tester, and pin-on-disc wear test. The load of wear test was 10 N and the samples were worn against different pins, ball-bearing steel (DIN 1.3505), and cemented tungsten carbide (WC-Co). The results indicate that the difference of hardness between the samples with PN-TiNlayer and those samples with only TiN layer without PN was 450 HV and the former samples showed a significant amount of wear resistance in comparison to the latter ones.

  8. Effects of complexing agents on electrochemical deposition of FeS x O y thin films

    NASA Astrophysics Data System (ADS)

    Supee, Aizuddin; Ichimura, Masaya

    2016-08-01

    FeS x O y thin films were deposited on indium-tin-oxide (ITO)-coated glass substrates at 15 °C via galvanostatic electrochemical deposition from an aqueous solution containing 100 mM Na2S2O3 and 30 mM FeSO4. The effects of l(+)-tartaric acid (C4H4O6) and lactic acid [CH3CH(OH)COOH] at different concentrations were investigated. All the deposited films were amorphous. With the complexing agents, the thickness was increased, and the oxygen content was reduced significantly compared with the sample deposited without the complexing agents. In the photoelectrochemical measurement, p-type conductivity was confirmed. The photoresponsivity was not influenced significantly by the complexing agent, suggesting that the oxygen content does not drastically affect the properties of the deposited films probably because the local bonding configuration around Fe atoms in FeS x O y is similar to that in FeS2.

  9. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1980-01-01

    Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

  10. Recent progress of obliquely deposited thin films for industrial applications

    NASA Astrophysics Data System (ADS)

    Suzuki, Motofumi; Itoh, Tadayoshi; Taga, Yasunori

    1999-06-01

    More than 10 years ago, birefringent films of metal oxides were formed by oblique vapor deposition and investigated with a view of their application to optical retardation plates. The retardation function of the films was explained in terms of the birefringence caused by the characteristic anisotropic nanostructure inside the films. These films are now classified in the genre of the so-called sculptured thin films. However, the birefringent films thus prepared are not yet industrialized even now due to the crucial lack of the durability and the yield of products. In this review paper, we describe the present status of application process of the retardation films to the information systems such as compact disc and digital versatile disc devices with a special emphasis on the uniformity of retardation properties in a large area and the stability of the optical properties of the obliquely deposited thin films. Finally, further challenges for wide application of the obliquely deposited thin films are also discussed.

  11. Fabrication of Piezoelectric Polyurea Films by Alternating Deposition

    NASA Astrophysics Data System (ADS)

    Yanase, Takashi; Hasegawa, Tetsuya; Nagahama, Taro; Shimada, Toshihiro

    2012-04-01

    We demonstrate that polyurea films can be prepared by alternating deposition with automated deposition control involving quartz crystal microbalance monitoring and optical source heating. The thickness of the films was linearly controlled by changing the repetition time of deposition, and the stoichiometry obtained was much higher than ±5%. The surface roughness of a 600-nm-thick film was 0.5 nm, which ensures the nm thickness control of the deposited polymers. The piezoelectricity of the films was confirmed by directly measuring the current transient induced by mechanical stress and by measuring the capacitance change induced by electric field.

  12. Enhanced Photocatalytic Performance Depending on Morphology of Bismuth Vanadate Thin Film Synthesized by Pulsed Laser Deposition.

    PubMed

    Jeong, Sang Yun; Choi, Kyoung Soon; Shin, Hye-Min; Kim, Taemin Ludvic; Song, Jaesun; Yoon, Sejun; Jang, Ho Won; Yoon, Myung-Han; Jeon, Cheolho; Lee, Jouhahn; Lee, Sanghan

    2017-01-11

    We have fabricated high quality bismuth vanadate (BiVO4) polycrystalline thin films as photoanodes by pulsed laser deposition (PLD) without a postannealing process. The structure of the grown films is the photocatalytically active phase of scheelite-monoclinic BiVO4 which was obtained by X-ray diffraction (XRD) analysis. The change of surface morphology for the BIVO4 thin films depending on growth temperature during synthesis has been observed by scanning electron microscopy (SEM), and its influence on water splitting performance was investigated. The current density of the BiVO4 film grown on a glass substrate covered with fluorine-doped tin oxide (FTO) at 230 °C was as high as 3.0 mA/cm(2) at 1.23 V versus the potential of the reversible hydrogen electrode (VRHE) under AM 1.5G illumination, which is the highest value so far in previously reported BiVO4 films grown by physical vapor deposition (PVD) methods. We expect that doping of transition metal or decoration of oxygen evolution catalyst (OEC) in our BiVO4 film might further enhance the performance.

  13. Real-Time Deposition Monitor for Ultrathin Conductive Films

    NASA Technical Reports Server (NTRS)

    Hines, Jacqueline

    2011-01-01

    A device has been developed that can be used for the real-time monitoring of ultrathin (2 or more) conductive films. The device responds in less than two microseconds, and can be used to monitor film depositions up to about 60 thick. Actual thickness monitoring capability will vary based on properties of the film being deposited. This is a single-use device, which, due to the very low device cost, can be disposable. Conventional quartz/crystal microbalance devices have proven inadequate to monitor the thickness of Pd films during deposition of ultrathin films for hydrogen sensor devices. When the deposited film is less than 100 , the QCM measurements are inadequate to allow monitoring of the ultrathin films being developed. Thus, an improved, high-sensitivity, real-time deposition monitor was needed to continue Pd film deposition development. The new deposition monitor utilizes a surface acoustic wave (SAW) device in a differential delay-line configuration to produce both a reference response and a response for the portion of the device on which the film is being deposited. Both responses are monitored simultaneously during deposition. The reference response remains unchanged, while the attenuation of the sensing path (where the film is being deposited) varies as the film thickness increases. This device utilizes the fact that on high-coupling piezoelectric substrates, the attenuation of an SAW undergoes a transition from low to very high, and back to low as the conductivity of a film on the device surface goes from nonconductive to highly conductive. Thus, the sensing path response starts with a low insertion loss, and as a conductive film is deposited, the film conductivity increases, causing the device insertion loss to increase dramatically (by up to 80 dB or more), and then with continued film thickness increases (and the corresponding conductivity increases), the device insertion loss goes back down to the low level at which it started. This provides a

  14. Photochemical etching during ultraviolet photolytic deposition of metal films on semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Kowalczyk, Steven P.; Miller, D. L.

    1986-01-01

    UV photochemical deposition of Sn films on GaAs (001) surfaces from a variety of tin-containing compounds (tetramethyltin, tetrabutyltin, dibutyltin dibromide, stannic chloride, hexamethylditin, dibutyltin sulfide, and iodotrimethyltin) was studied. X-ray photoelectron spectroscopy showed that during the initial stages of deposition from the halogenated compounds, the GaAs surface was photochemically etched, most likely by a halogen radical species. The photochemical etching resulted in an arsenic deficient surface which was particularly dramatic for the case of SnCl4. These results have important implications for the choice of sources for photochemical deposition when the metal-semiconductor interface is important and for photochemical etching if stoichiometric surfaces are required.

  15. Chemical vapor deposition of copper films

    NASA Astrophysics Data System (ADS)

    Borgharkar, Narendra Shamkant

    We have studied the kinetics of copper chemical vapor deposition (CVD) for interconnect metallization using hydrogen (Hsb2) reduction of the Cu(hfac)sb2 (copper(II) hexafluoroacetylacetonate) precursor. Steady-state deposition rates were measured using a hot-wall microbalance reactor. For base case conditions of 2 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C, a growth rate of 0.5 mg cmsp{-2} hrsp{-1} (ca. 10 nm minsp{-1}) is observed. Reaction order experiments suggest that the deposition rate passes through a maximum at partial pressure of 2 Torr of Cu(hfac)sb2. The deposition rate has an overall half-order dependence on Hsb2 partial pressure. A Langmuir-Hinshelwood rate expression is used to describe the observed kinetic dependencies on Cu(hfac)sb2, Hsb2, and H(hfac). Based on the rate expression a mechanism is proposed in which the overall rate is determined by the surface reaction of adsorbed Cu(hfac)sb2 and H species. Additionally, the role of alcohols in enhancing the deposition rate has been investigated. Addition of isopropanol results in a six fold enhancement to yield a deposition rate of 3.3 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}) at 5 Torr of isopropanol, 0.4 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C. Ethanol and methanol give lower enhancements of 1.75 and 1.1 mg cmsp{-2} hrsp{-1}, respectively. A mechanism based on the ordering of the aqueous pKsba values of the alcohols is proposed to explain the observed results. Lastly, we have built a warm-wall Pedestal reactor apparatus to demonstrate copper CVD on TiN/Si substrates. The apparatus includes a liquid injection system for transport of isopropanol-diluted precursor solutions. At optimized conditions of precursor and substrate pre-treatments, we have deposited uniform films of copper on TiN/Si substrates at an average deposition rate of 3.0 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}).

  16. Electrical properties of magnesium incorporated zinc tin oxide thin film transistors by solution process.

    PubMed

    Jeon, In Young; Lee, Ji Yoon; Yoon, Dae Ho

    2013-03-01

    Zinc tin oxide (ZTO) films were fabricated on SiO2/Si substrate as a function of Mg concentration (the ratio of 3 to 10 atomic%) using a spin-coating process. For the characterization of thin film transistors (TFTs), Zn0.3Sn0.70 channel TFT exhibited a higher on/off ratio compared to Zn0.5 Sn.0.5O channel TFT because the higher Sn concentration can induce more charge carriers. 3 atomic% Mg incorporated Zn0.3Sn0.7O channel TFTs showed stable electrical performances such as I(on/off) - 1 x 10(7), micro(sat) = 1.40 cm2 V(-1) s(-1), and S = 0.39 V/decade. However, 10 atomic% Mg incorporated Zn0.3Sn0.7O channel TFTs deteriorated their electrical performances due to Mg segregation. The Mg incorporated Zn0.3Sn0.7O channel TFTs effectively suppress off-current and threshold voltage change during positive gate bias stress due to their strong bonding with oxygen.

  17. Electrical and optical properties of thin films consisting of tin-doped indium oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Ederth, J.; Johnsson, P.; Niklasson, G. A.; Hoel, A.; Hultåker, A.; Heszler, P.; Granqvist, C. G.; van Doorn, A. R.; Jongerius, M. J.; Burgard, D.

    2003-10-01

    Electrical transport and optical properties were investigated in porous thin films consisting of In2O3:Sn (indium tin oxide, ITO) nanoparticles with an initial crystallite size of ˜16 nm and a narrow size distribution. Temperature dependent resistivity was measured in the 77130 K and negative at t<130 K. Effects of annealing on the ITO nanoparticles were investigated by analyzing the spectral optical reflectance and transmittance using effective medium theory and accounting for ionized impurity scattering. Annealing was found to increase both charge carrier concentration and mobility. The ITO nanoparticles were found to have a resistivity as low as 2×10-4 Ω cm, which is comparable to the resistivity of dense high quality In2O3:Sn films. Particulate samples with a luminous transmittance exceeding 90% and a resistivity of ˜10-2 Ω cm were obtained.

  18. Organic thin film deposition in atmospheric pressure glow discharge

    SciTech Connect

    Okazaki, S.; Kogoma, M.; Yokoyama, T.; Kodama, M.; Nomiyama, H.; Ichinohe, K.

    1996-01-01

    The stabilization of a homogeneous glow discharge at atmospheric pressure has been studied since 1987. On flat surfaces, various plasma surface treatments and film depositions at atmospheric pressure have been examined. A practical application of the atmospheric pressure glow plasma on inner surfaces of flexible polyvinyl chloride tubes was tested for thin film deposition of polytetrafluoroethylene. Deposited film surfaces were characterized by ESCA and FT-IR/ATR measurements. Also SEM observation was done for platelet adhesion on the plasma treated polyvinyl chloride surface. These results showed remarkable enhancement in the inhibition to platelet adhesion on the inner surface of PVC tube, and homogeneous organic film deposition was confirmed. The deposition mechanism of polytetrafluoroethylene film in atmospheric pressure glow plasma is the same as the mechanism of film formation in the low pressure glow plasma, except for radical formation source. {copyright} {ital 1996 American Institute of Physics.}

  19. Pulsed Laser Deposition of the Ni-Base Superalloy Films

    NASA Astrophysics Data System (ADS)

    Shin, Joonghan; Mazumder, Jyotirmoy

    2016-03-01

    Ni-base superalloy films were deposited on single-crystal (SC) Ni-base superalloy substrates from a target with the same alloy composition by pulsed laser deposition (PLD) technique. Microstructure and growth behavior of the films deposited were investigated by X-ray diffraction and scanning electron microscopy, and atomic force microscope. The homoepitaxial growth of the SC Ni-base superalloy film occurred at the 1123 K (850 °C) substrate temperature and 2 J/cm2 pulse energy. Films generally exhibited a strong polycrystalline characteristic as the substrate temperature and pulse energy increased. The SC film had a smooth surface. The measured root mean square roughness of the SC film surface was ~6 nm. Based on the Taguchi analysis, the substrate temperature and pulse energy were the most significant process parameters influencing the structural characteristics of the films. Also, the influence of the pulse repletion rate and deposition time was not found to be significant.

  20. Nanomechanical and nanotribological properties of Nb substituted TiN thin films

    SciTech Connect

    Krishna, M. Ghanashyam; Vasu, K.; Padmanabhan, K. A.

    2012-06-25

    Nanomechanical and nanotribological properties of Ti{sub 1-x}Nb{sub x}N (0{<=}x{<=}1) thin films were investigated as a function x. The films were deposited onto polycrystalline nuclear grade 316LN stainless steel (SS) substrate by radio frequency magnetron sputtering in 100% N{sub 2} plasma. The hardness and Young's modulus increased while the friction coefficient and wear volume decreased with increasing Nb substitution. The highest hardness achieved was 31GPa for x=0.77. At the same Nb concentration, the friction coefficient was 0.15 and the elastic recovery was 60%.

  1. A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitors.

    PubMed

    Groenland, A W; Wolters, R A M; Kovalgin, A Y; Schmitz, J

    2011-09-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2-silicon substrate). A high quality 50-100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 degrees C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (I leak) and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

  2. Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films

    NASA Astrophysics Data System (ADS)

    Kukli, Kaupo; Kemell, Marianna; Vehkamäki, Marko; Heikkilä, Mikko J.; Mizohata, Kenichiro; Kalam, Kristjan; Ritala, Mikko; Leskelä, Markku; Kundrata, Ivan; Fröhlich, Karol

    2017-02-01

    Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 °C. Ta2O5 films doped with ZrO2, TaZr2.75O8 ternary phase, or ZrO2 doped with Ta2O5 were grown to thickness and composition depending on the number and ratio of alternating ZrO2 and Ta2O5 deposition cycles. All the films grown exhibited resistive switching characteristics between TiN and Pt electrodes, expressed by repetitive current-voltage loops. The most reliable windows between high and low resistive states were observed in Ta2O5 films mixed with relatively low amounts of ZrO2, providing Zr to Ta cation ratio of 0.2.

  3. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    SciTech Connect

    Henley, W.B.; Sacks, G.J.

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  4. Fabrication and characterization of highly transparent and conductive indium tin oxide films made with different solution-based methods

    NASA Astrophysics Data System (ADS)

    Xia, N.; Gerhardt, R. A.

    2016-11-01

    Solution-based fabrication methods can greatly reduce the cost and broaden the applications of transparent conducting oxides films, such as indium tin oxide (ITO) films. In this paper, we report on ITO films fabricated by spin coating methods on glass substrates with two different ITO sources: (1) a commercial ITO nanopowder water dispersion and (2) a sol-gel ITO solution. A simple and fast air annealing process was used to treat as-coated ITO films on a controlled temperature hot plate. Thermogravimetric analysis and x-ray diffraction showed that highly crystalline ITO films were formed after the annealing steps. The final ITO films had a good combination of optical properties and electrical properties, especially for films made from five layers of sol-gel ITO (92.66% transmittance and 8.7 × 10-3 Ω cm resistivity). The surface morphology and conducting network on the ITO films were characterized by non-contact and current atomic force microscopy. It was found that conducting paths were only partially connected for the nanoparticle ITO dispersion films, whereas the sol-gel ITO films had a more uniformly distributed conducting network on the surface. We also used the sol-gel ITO films to fabricate a simple liquid crystal display (LCD) device to demonstrate the excellent properties of our films.

  5. Thickness Dependence of Properties of ITO Films Deposited on PET Substrates.

    PubMed

    Kim, Seon Tae; Kim, Tae Gyu; Cho, Hyun; Yoon, Su Jong; Kim, Hye Sung; Kim, Jin Kon

    2016-02-01

    Indium tin oxide (ITO) films with various thicknesses from 104 nm to 513 nm were prepared onto polyethylene terephthalate (PET) substrates by using r.f. magnetron sputtering without intentionally heating the substrates. The structural, optical, and electrical properties of ITO films were investigated as a function of film thickness. It was found that the amorphous nature of the ITO film was dominant below the thickness of about 200 nm but the degree of the crystallinity increased with an increasing thickness above the thickness of about 250 nm, resulting in the increase of carrier concentration and therefore reducing the electrical resistivity from 5.1 x 10(-3) to 9.4 x 10(-4) omega x cm. The average transmittance (400-800 nm) of the ITO deposited PET substrates decreased as the film thickness was increasing and was above 80% for the thickness below 315 nm. The results show that the improvement of the film crystallinity with the film thickness contributes to the increase of the carrier concentration and the enhancement of the electrical conductivity.

  6. Chemical vapor deposition of titanium{endash}silicon{endash}nitride films

    SciTech Connect

    Smith, P.M.; Custer, J.S.

    1997-06-01

    Titanium{endash}silicon{endash}nitride films were grown by metal-organic chemical vapor deposition. At temperatures between 300 and 450{degree}C, tetrakis(diethylamido)titanium, ammonia, and silane react to form films with average compositions near the TiN{endash}Si{sub 3}N{sub 4} tie line and low impurity contents (C{lt}1.5at.{percent}, H between 5 and 15 at.{percent}, with no other impurities present). The film resistivity is a strong function of Si content in the films, ranging continuously from 400 {mu}{Omega}cm for pure TiN up to 1 {Omega}cm for films with 25 at.{percent} Si. Step coverages of approximately 75{percent} on 0.35 {mu}m, 3:1 aspect ratio trenches, and 35{percent}{endash}40{percent} on 0.1{mu}m/10:1 trenches are found for films with resistivities below 1000 {mu}{Omega}cm. These films are promising candidates for diffusion barriers in microelectronic applications. {copyright} {ital 1997 American Institute of Physics.}

  7. Processing of Copper Zinc Tin Sulfide Nanocrystal Dispersions for Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Williams, Bryce Arthur

    A scalable and inexpensive renewable energy source is needed to meet the expected increase in electricity demand throughout the developed and developing world in the next 15 years without contributing further to global warming through CO2 emissions. Photovoltaics may meet this need but current technologies are less than ideal requiring complex manufacturing processes and/or use of toxic, rare-earth materials. Copper zinc tin sulfide (Cu 2ZnSnS4, CZTS) solar cells offer a true "green" alternative based upon non-toxic and abundant elements. Solution-based processes utilizing CZTS nanocrystal dispersions followed by high temperature annealing have received significant research attention due to their compatibility with traditional roll-to-roll coating processes. In this work, CZTS nanocrystal (5-35 nm diameters) dispersions were utilized as a production pathway to form solar absorber layers. Aerosol-based coating methods (aerosol jet printing and ultrasonic spray coating) were optimized for formation of dense, crack-free CZTS nanocrystal coatings. The primary variables underlying determination of coating morphology within the aerosol-coating parameter space were investigated. It was found that the liquid content of the aerosol droplets at the time of substrate impingement play a critical role. Evaporation of the liquid from the aerosol droplets during coating was altered through changes to coating parameters as well as to the CZTS nanocrystal dispersions. In addition, factors influencing conversion of CZTS nanocrystal coatings into dense, large-grained polycrystalline films suitable for solar cell development during thermal annealing were studied. The roles nanocrystal size, carbon content, sodium uptake, and sulfur pressure were found to have pivotal roles in film microstructure evolution. The effects of these parameters on film morphology, grain growth rates, and chemical makeup were analyzed from electron microscopy images as well as compositional analysis

  8. Characterization of copper selenide thin films deposited by chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Al-Mamun; Islam, A. B. M. O.

    2004-11-01

    A low-cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films onto glass substrates and deposited films were characterized by X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and UV-vis spectrophotometry. Good quality thin films of smooth surface of copper selenide thin films were deposited using sodium selenosulfate as a source of selenide ions. The structural and optical behaviour of the films are discussed in the light of the observed data.

  9. Photoelectrochemical performance of W-doped BiVO4 thin films deposited by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Holland, S. Keith; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

    2014-01-01

    The effects of tungsten doping and hydrogen annealing on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting were studied. Thin films of BiVO were deposited on indium tin oxide-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) to the precursor. The 1.7- to 2.2-μm-thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375°C in 3% H exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination, where photocurrent densities of up to 1.3 mA cm-2 at 0.5 V with respect to Ag/AgCl were achieved. Films doped with 1% or 5% (atomic percent) tungsten from either STA or AMT exhibited reduced PEC performance and greater sample-to-sample performance variations. Powder x-ray diffraction data indicated that the films continue to crystallize in the monoclinic polymorph at low doping levels but crystallize in the tetragonal scheelite structure at higher doping. It is surmised that the phase and morphology differences promoted by the addition of W during the deposition process reduced the PEC performance as measured by photovoltammetry.

  10. Formation of diamond nanoparticle thin films by electrophoretic deposition

    NASA Astrophysics Data System (ADS)

    Goto, Yosuke; Ohishi, Fujio; Tanaka, Kuniaki; Usui, Hiroaki

    2016-03-01

    Thin films of diamond nanoparticles were prepared by electrophoretic deposition (EPD) using 0.5 wt % dispersions in water, ethanol, and 2-propanol. The film growth rate increased with increasing voltage applied to the electrodes. However, an excessive increase in voltage caused the degradation of film morphology. The optimum voltage was 4 V with an electrode separation of 5 mm. The film growth rate was higher in organic solvents than in water. The deposited film had a smooth surface with an average surface roughness comparable to the size of primary particles of the source material. It is notable that the EPD films had a considerably higher physical stability than spin-coated and cast films. The stability was further improved by thermally annealing the films. IR analysis revealed that the diamond nanoparticles have carboxy and amino groups on their surfaces. It is considered that the stability of the EPD films originate from a chemical reaction between these functional groups.

  11. Electric-field-ratio profiling at the Silsilah tin-bearing greisen deposit, Kingdom of Saudi Arabia

    USGS Publications Warehouse

    Kamilli, R.J.; Zablocki, C.J.

    1993-01-01

    Buried, possibly mineralized granite cupolas at the Silsilah tin deposit in Saudi Arabia have been successfully located using a closely spaced electric-field-ratio profiling technique. In this study electrical fields at 27 and 270 Hz across grounded electrodes spaced 50m apart were measured along six traverses. The technique allowed the authors to identify and distinguish among unroofed granite cupolas, cupolas with their aplite-pegmatite apical contact zones intact, strong and weak greisens, dikes, faults, and pervasively argillized rocks. -from Authors

  12. Low Temperature, Self-nucleated Growth of Indium Tin Oxide Nanostructures by Pulsed Laser Deposition in Argon

    SciTech Connect

    Tan, S. S.; Lee, W. K.; Kee, Y. Y.; Wong, H. Y.; Tou, T. Y.

    2011-03-30

    Indium tin oxide (ITO) nanostructures were successfully deposited on glass substrate by pulsed laser ablation in argon gas at 250 deg. C. Microstructural changes were observed in the argon gas pressure between 30 to 50 mTorr. The as-grown, nanostructured ITO exhibit In{sub 2}O{sub 3} bixbyite structure orientated at <111> direction. At the initial stage of growth, there was a large number of nucleation sites detected which eventually evolved into needle-like branches. The presence of spheres at the tip of these branches indicates that these nanostructured ITO were likely governed by vapor-liquid-solid (VLS) growth mechanism.

  13. Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.

    PubMed

    Wölz, M; Hauswald, C; Flissikowski, T; Gotschke, T; Fernández-Garrido, S; Brandt, O; Grahn, H T; Geelhaar, L; Riechert, H

    2015-06-10

    Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry show that Ti is converted to TiN upon exposure of the surface to the N plasma. In addition, the ellipsometric data demonstrate this TiN film to be metallic. The diffraction data evidence that the GaN nanowires have a strict epitaxial relationship to this film. Photoluminescence spectroscopy of the GaN nanowires shows excitonic transitions virtually identical in spectral position, line width, and decay time to those of state-of-the-art GaN nanowires grown on Si. Therefore, the crystalline quality of the GaN nanowires grown on metallic TiN and on Si is equivalent. The freedom to employ metallic substrates for the epitaxial growth of semiconductor nanowires in high structural quality may enable novel applications that benefit from the associated high thermal and electrical conductivity as well as optical reflectivity.

  14. Bismuth thin films obtained by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Flores, Teresa; Arronte, Miguel; Rodriguez, Eugenio; Ponce, Luis; Alonso, J. C.; Garcia, C.; Fernandez, M.; Haro, E.

    1999-07-01

    In the present work Bi thin films were obtained by Pulsed Laser Deposition, using Nd:YAG lasers. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.

  15. Thin film deposition using rarefied gas jet

    NASA Astrophysics Data System (ADS)

    Pradhan, Sahadev, , Dr.

    2016-11-01

    The rarefied gas jet of aluminium is studied at Mach number Ma = (Uj /√{ kbTj / m }) in the range .01 deposition mechanisms in a physical vapor deposition (PVD) process for the development of the highly oriented pure metallic aluminum thin film with uniform thickness and strong adhesion on the surface of the substrate in the form of ionic plasma, so that the substrate can be protected from corrosion and oxidation and thereby enhance the lifetime and safety, and to introduce the desired surface properties for a given application. Here, His the characteristic dimension, Uj and Tj are the jet velocity and temperature, nd is the number density of the jet, m and d are the molecular mass and diameter, and kb is the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn = 0 . 01) ; shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number, which allows scattering collisions to rapidly direct the atoms to the substrate.

  16. Thin film deposition using rarefied gas jet

    NASA Astrophysics Data System (ADS)

    Pradhan, Sahadev

    2016-10-01

    The rarefied gas jet of aluminium is studied at Mach number Ma =(U_j ∖√{ kbTj / m }) in the range .01 deposition mechanisms in a physical vapor deposition (PVD) process for the development of the highly oriented pure metallic aluminum thin film with uniform thickness and strong adhesion on the surface of the substrate in the form of ionic plasma, so that the substrate can be protected from corrosion and oxidation and thereby enhance the lifetime and safety, and to introduce the desired surface properties for a given application. Here, H is the characteristic dimension, U_j and T_j are the jet velocity and temperature, n_d is the number density of the jet, m and d are the molecular mass and diameter, and kb is the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn = 0.01); shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number ,which allows scattering collisions to rapidly direct the atoms to the substrate.

  17. Thin film deposition using rarefied gas jet

    NASA Astrophysics Data System (ADS)

    Pradhan, Sahadev, , Dr.

    2017-01-01

    The rarefied gas jet of aluminium is studied at Mach number Ma =(U_j /√{ kbTj / m }) in the range .01 deposition mechanisms in a physical vapor deposition (PVD) process for the development of the highly oriented pure metallic aluminum thin film with uniform thickness and strong adhesion on the surface of the substrate in the form of ionic plasma, so that the substrate can be protected from corrosion and oxidation and thereby enhance the lifetime and safety, and to introduce the desired surface properties for a given application. Here, H is the characteristic dimension, U_j and T_j are the jet velocity and temperature, n_d is the number density of the jet, m and d are the molecular mass and diameter, and kb is the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn =0.01); shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number ,which allows scattering collisions to rapidly direct the atoms to the substrate.

  18. Investigation of new stilbazolium dye thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Sotirov, S.; Todorova, M.; Draganov, M.; Penchev, P.; Bakalska, R.; Serbezov, V.

    2013-03-01

    In present work we report the analysis of thin films and targets from new stilbazolium dye E-4-(2-(4- hydroxynaphthalen-1-yl)vinyl)-1-octylquinolinium iodide (D1) deposited by Pulsed Laser Deposition (PLD) technique using high power UV TEA N2 laser. The thin films are deposited onto substrates - KBr, 316L SS alloy, optical glass and aluminum foil. The films were characterized by FTIR spectroscopy, bright field microscopy, fluorescence microscopy and atomic force microscopy (AFM) analysis. FTIR spectroscopic analysis of thin films and target material shows small differences between deposited films and native substance. The films are found to be homogeneous by AFM results and without any cracks and droplets on the surfaces. The present study demonstrates the ability of PLD technique to provide thin films from new stilbazolium dyes with good quality when they are applied as non-linear optical (NLO) organic materials on different type of substrates.

  19. Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

    SciTech Connect

    Burke, Micheal Blake, Alan; Povey, Ian M.; Schmidt, Michael; Petkov, Nikolay; Carolan, Patrick; Quinn, Aidan J.

    2014-05-15

    A design of experiments methodology was used to optimize the sheet resistance of titanium nitride (TiN) films produced by plasma-enhanced atomic layer deposition (PE-ALD) using a tetrakis(dimethylamino)titanium precursor in a N{sub 2}/H{sub 2} plasma at low temperature (250 °C). At fixed chamber pressure (300 mTorr) and plasma power (300 W), the plasma duration and N{sub 2} flow rate were the most significant factors. The lowest sheet resistance values (163 Ω/sq. for a 20 nm TiN film) were obtained using plasma durations ∼40 s, N{sub 2} flow rates >60 standard cubic centimeters per minute, and purge times ∼60 s. Time of flight secondary ion mass spectroscopy data revealed reduced levels of carbon contaminants in the TiN films with lowest sheet resistance (163 Ω/sq.), compared to films with higher sheet resistance (400–600 Ω/sq.) while transmission electron microscopy data showed a higher density of nanocrystallites in the low-resistance films. Further significant reductions in sheet resistance, from 163 Ω/sq. to 70 Ω/sq. for a 20 nm TiN film (corresponding resistivity ∼145 μΩ·cm), were achieved by addition of a postcycle Ar/N{sub 2} plasma step in the PE-ALD process.

  20. Perovskite solar cells based on nanocolumnar plasma-deposited ZnO thin films.

    PubMed

    Ramos, F Javier; López-Santos, Maria C; Guillén, Elena; Nazeeruddin, Mohammad Khaja; Grätzel, Michael; Gonzalez-Elipe, Agustin R; Ahmad, Shahzada

    2014-04-14

    ZnO thin films having a nanocolumnar microstructure are grown by plasma-enhanced chemical vapor deposition at 423 K on pre-treated fluorine-doped tin oxide (FTO) substrates. The films consist of c-axis-oriented wurtzite ZnO nanocolumns with well-defined microstructure and crystallinity. By sensitizing CH3NH3PbI3 on these photoanodes a power conversion of 4.8% is obtained for solid-state solar cells. Poly(triarylamine) is found to be less effective when used as the hole-transport material, compared to 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD), while the higher annealing temperature of the perovskite leads to a better infiltration in the nanocolumnar structure and an enhancement of the cell efficiency.

  1. Carbon Ion Irradiation Effects on Pulsed Laser Deposited Titanium Nitride Thin Films

    NASA Astrophysics Data System (ADS)

    Mahmood, Khaliq; Bashir, Shazia; Akram, Mahreen; Hayat, Asma; Faizan-Ul-Haq; Saadat, Shahzad

    2015-02-01

    Pulse laser deposited thin films of TiN are irradiated by 1 MeV carbon (C+) ions beam for various doses ranging 0.4 to 2.8 × 1014 ions/cm2. Atomic force microscopy (AFM) analysis reveals the formation of hillocks like structures after ion irradiation. X-ray diffraction (XRD) investigations show that the film crystallinity increases for lower doses ranging from 0.4 to 1.2 × 1014 ions/cm2 and decreases for higher doses (2 to 2.8 × 1014 ions/cm2) of ions. No new bands are identified from Raman spectroscopy. However, a noticeable change in microhardness has been observed. The hillock densities as well as hardness are strongly dependent upon ion dose.

  2. Deposition of copper selenide thin films and nanoparticles

    NASA Astrophysics Data System (ADS)

    Hu, Yunxiang; Afzaal, Mohammad; Malik, Mohammad A.; O'Brien, Paul

    2006-12-01

    A new method is reported for the growth of copper selenide thin films and nanoparticles using copper acetylacetonate and trioctylphosphine selenide. Aerosol-assisted chemical vapor deposition experiments lead to successful deposition of tetragonal Cu 2Se films. In contrast, hexadecylamine capped nanoparticles are composed of cubic Cu 2-xSe. The deposited materials are optically and structurally characterized. The results of this comprehensive study are described and discussed.

  3. Deposition of controlled thickness ultrathin SnO2:Sb films by spin-coating.

    PubMed

    Giraldi, Tania R; Ribeiro, Cauê; Escote, Marcia T; Conti, Tiago G; Chiquito, Adenilson J; Leite, Edson R; Longo, Elson; Varela, José A

    2006-12-01

    The technological interest in transparent conductive oxide films (TCOs) has motivated several works in processing techniques, in order to obtain adequate routes to application. In this way, this work describes a new route to obtain antimony-doped tin oxide (ATO) films, based in colloidal dispersions of oxide nanocrystals. The nanoparticles were obtained by a hydrolisis method, using SnCl2 and SbCl3 in ethanolic solutions. The residual halides were removed by dyalisis, obtaining a limpid and transparent colloidal suspension. By this, the method offers the advantage of producing ultrathin films without organic contaminants. This route was employed to produce films with 5, 10, 14, and 18 mol% Sb doping, with thickness ranging from 40 to 70 nm. The physical characterization of the samples showed a uniform layer deposition, resulting in good packing density and high transmittance. A preliminar electrical study confirmed the low electrical resistivity even in the ultrathin films, in such level similar of reported data. The method described is similar in some aspects to layer-by-layer (LbL) techniques, allowing fine control of thickness and interesting properties for ultrathin films, however, with low cost when compared to similar routes.

  4. Laser-assisted atom probe tomography of Ti/TiN films deposited on Si.

    PubMed

    Sanford, N A; Blanchard, P T; White, R; Vissers, M R; Diercks, D R; Davydov, A V; Pappas, D P

    2017-03-01

    Laser-assisted atom probe tomography (L-APT) was used to examine superconducting TiN/Ti/TiN trilayer films with nominal respective thicknesses of 5/5/5 (nm). Such materials are of interest for applications that require large arrays of microwave kinetic inductance detectors. The trilayers were deposited on Si substrates by reactive sputtering. Electron energy loss microscopy performed in a scanning transmission electron microscope (STEM/EELS) was used to corroborate the L-APT results and establish the overall thicknesses of the trilayers. Three separate batches were studied where the first (bottom) TiN layer was deposited at 500°C (for all batches) and the subsequent TiN/Ti bilayer was deposited at ambient temperature, 250°C, and 500°C, respectively. L-APT rendered an approximately planar TiN/Si interface by making use of plausible mass-spectral assignments to N3(1+), SiN(1+), and SiO(1+). This was necessary since ambiguities associated with the likely simultaneous occurrence of Si(1+) and N2(1+) prevented their use in rendering the TiN/Si interface upon reconstruction. The non-superconducting Ti2N phase was also revealed by L-APT. Neither L-APT nor STEM/EELS rendered sharp Ti/TiN interfaces and the contrast between these layers diminished with increased film deposition temperature. L-APT also revealed that hydrogen was present in varying degrees in all samples including control samples that were composed of single layers of Ti or TiN.

  5. Fabrication Process Assessment and Negative Bias Illumination Stress Study of Indium-Gallium-Zinc Oxide and Zinc-Tin Oxide Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Hoshino, Ken

    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs, significantly improving the NBIS stability. NBIS instabilities in unpassivated TFTs are attributed to an NBIS-induced desorption of chemisorbed oxygen from the channel layer top surface, exposing surface oxygen vacancies. A ZTSO layer protects the channel layer top surface from adsorbed gas interactions and also appears to reduce the density of oxygen vacancies. The best device architectures investigated with respect to TFT electrical performance are found to be staggered with aluminum electrodes for unpassivated TFTs and coplanar with ITO electrodes for ZTSO-passivated TFTs. Annealing in wet-O2 is not found to be effective for improving the performance of IGZO or ZTO TFTs or for reducing the post-deposition annealing temperature.

  6. Tin oxide nanocluster hydrogen and ammonia sensors.

    PubMed

    Lassesson, A; Schulze, M; van Lith, J; Brown, S A

    2008-01-09

    We have prepared sensitive hydrogen and ammonia sensors from thin films of tin nanoclusters with diameters between 3 and 10 nm. By baking the samples at 200 °C in ambient air the clusters were oxidized, resulting in very stable films of tin oxide clusters with similar diameters to the original Sn clusters. By monitoring the electrical resistance, it is shown that the cluster films are highly responsive to hydrogen and ammonia at relatively low temperatures, thereby making them attractive for commercial applications in which low power consumption is required. Doping of the films by depositing Pd on top of the clusters resulted in much improved sensor response and response times. It is shown that optimal sensor properties are achieved for very thin cluster films (a few monolayers of clusters).

  7. Efficient phase matching algorithm for measurements of ultrathin indium tin oxide film thickness in white light interferometry

    NASA Astrophysics Data System (ADS)

    Chen, Kai; Lei, Feng; Itoh, Masahide

    2017-02-01

    A novel method is proposed to measure the thickness of the indium tin oxide (ITO) film, which is less than 20 nm, using valid Fourier's phase information of white light correlogram and curve matching algorithm. Based on the Fourier transform amplitude information, the valid phase distribution function that contains the thin transparent electrode ITO film thickness information has been successfully extracted. A curve matching algorithm based on standard deviation is employed to accurately calculate the thickness of such thin ITO films. The experimental results show that the thickness values were consistent with that determined using the stylus instruments, indicating that this method can be applied to measure the ITO film thickness ranging from 5 to 100 nm.

  8. Tin-dioxide nanocrystals as Er3+ luminescence sensitizers: Formation of glass-ceramic thin films and their characterization

    NASA Astrophysics Data System (ADS)

    Zur, Lidia; Tran, Lam Thi Ngoc; Meneghetti, Marcello; Tran, Van Thi Thanh; Lukowiak, Anna; Chiasera, Alessandro; Zonta, Daniele; Ferrari, Maurizio; Righini, Giancarlo C.

    2017-01-01

    Silica-tin dioxide thin films doped with Er3+ ions were fabricated and investigated. Different parameters such as heat-treatment temperatures, molar concentrations of SnO2 as well as Er3+ ions concentration were changed in order to obtain the best properties of presented thin films. Using several techniques, thin films were characterized and proved to be crack-free, water-free and smooth after a heat-treatment at 1200 °C. Aiming to application in optics, the transparency of thin films was also evidenced by transmission spectra. Based on the photoluminescence measurements, the mechanism of energy transfer from SnO2 nanocrystals to Er3+ ions was examined and discussed.

  9. Polyimide films from vapor deposition: toward high strength, NIF capsules

    SciTech Connect

    Cook, R C; Hsieh, E J; Letts, S A; Roberts, C C; Saculla, M

    1998-10-16

    The focus of recent efforts at LLNL has been to demonstrate that vapor deposition processing is a suitable technique to form polyimide fnms with sufficient strength for current national ignition facility target specifications. Production of polyimide films with controlled stoichiometry was acccomplished by: 1) depositing a novel co-functional monomer and 2) matching the vapor pressure of each monomer in PMDA/ODA co-depositions. The sublimation and deposition rate for the monomers was determined over a range of temperatures. Polyimide films with thicknesses up to 30 p.m were fabricated. Composition, structure and strength were assessed using FTIR, SEM and biaxial burst testing. The best films had a tensile strength of approximately 100 MPa. A qualitative relationship between the stoichiometry and tensile strength of the film was demonstrated. Thin films ({approximately}3.5 {micro}m) were typically smooth with an rms of 1.5 nm.

  10. Large Crystal Grain Niobium Thin Films Deposited by Energetic Condensation

    SciTech Connect

    Zhao, X.; Valente-Feliciano, A-M.; Xu, C.; Geng, R.L.; Phillips, H.; Reece, Charles; Wright, J.; Seo, K.; Crooks, R.; Krishnan, Mahadevan; Gerhan, A.; Bures, B.; Wilson, K.

    2008-01-01

    This letter presents evidence for unprecedented Nb thin films that were grown on sapphire and copper (Cu) substrates using a vacuum arc process called coaxial energetic deposition CED^TM. Most other deposition techniques with low adatom energy produce amorphous or small crystal-grain films, and typically high substrate temperatures and anneal steps is required to form the large, highly connected grains. The CED^TM technique deposits from plasma consisting of a non-equilibrium, high energy (50-150eV) ion population produced from the ionized source material. At the substrate these fast ions break up columnar structures, intermix with the first few atomic layers of the substrate to improve adhesion, and form dense films at lower substrate temperatures than are typical for low adatom energy techniques, such as physical vapor deposition (PVD). Nano-scale features of the thin films were examined using electron backscatter diffraction (EBSD). The films cryogenic state electrical properties w

  11. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    NASA Astrophysics Data System (ADS)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  12. Growth and Post-Deposition Treatments of SrTiO3 Films for Dye-Sensitized Photoelectrosynthesis Cell Applications.

    PubMed

    Call, Robert W; Alibabaei, Leila; Dillon, Robert J; Knauf, Robin R; Nayak, Animesh; Dempsey, Jillian L; Papanikolas, John M; Lopez, Rene

    2016-05-18

    Sensitized SrTiO3 films were evaluated as potential photoanodes for dye-sensitized photoelectrosynthesis cells (DSPECs). The SrTiO3 films were grown via pulsed laser deposition (PLD) on a transparent conducting oxide (fluorine-doped tin oxide, FTO) substrate, annealed, and then loaded with zinc(II) 5,10,15-tris(mesityl)-20-[(dihydroxyphosphoryl)phenyl] porphyrin (MPZnP). When paired with a platinum wire counter electrode and an Ag/AgCl reference electrode these sensitized films exhibited photocurrent densities on the order of 350 nA/cm(2) under 0 V applied bias conditions versus a normal hydrogen electrode (NHE) and 75 mW/cm(2) illumination at a wavelength of 445 nm. The conditions of the post-deposition annealing step-namely, a high-temperature reducing atmosphere-proved to be the most important growth parameters for increasing photocurrent in these electrodes.

  13. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    NASA Astrophysics Data System (ADS)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  14. Thin film growth rate effects for primary ion beam deposited diamondlike carbon films

    NASA Technical Reports Server (NTRS)

    Nir, D.; Mirtich, M.

    1986-01-01

    Diamondlike carbon (DLC) films were grown by primary ion beam deposition and the growth rates were measured for various beam energies, types of hydrocarbon gases and their ratio to Ar, and substrate materials. The growth rate had a linear dependence upon hydrocarbon content in the discharge chamber, and only small dependence on other parameters. For given deposition conditions a threshold in the atomic ratio of carbon to argon gas was identified below which films did not grow on fused silica substrate, but grew on Si substrate and on existing DLC films. Ion source deposition parameters and substrate material were found to affect the deposition threshold and film growth rates.

  15. Sputtering deposition and characterization of ultrathin amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Lu, Wei

    1999-11-01

    This dissertation focuses on experimental investigations of ultrathin, ultrasmooth amorphous carbon (a-C) films deposited on Si(100) substrates by radio frequency (RF) sputtering and characterization of the nanomechanical and nanotribological properties and thermal stability of the films. Ultrathin a-C films of thickness 5--100 nm and typical root-mean-square roughness of 0.15--1 nm were deposited on ultrasmooth Si(100) substrates using pure argon as the sputtering gas. A low-pressure RF argon discharge model was used to analyze the plasma parameters in the film growth environment. These plasma parameters correlate the deposition conditions with the film growth processes. Atomic force microscopy (AFM) and surface force microscopy (SFM) were used to characterize the nanomechanical and nanotribological properties of the a-C films. X-ray photoelectron spectroscopy (XPS) was used to investigate the compositions and microstructures of the films. Sputter-etching measurements of the a-C films by energetic argon ion bombardment were used to study the surface binding energy of carbon atoms in a-C films deposited under different conditions. The dependence of film properties on deposition conditions was studied, and relations between nanomechanical and nanotribological properties were discussed in terms of a modified deformation index. The deformation and nanotribology mechanisms of the a-C films were compared with those of other films, such as TiC and Cr films (both 100 nm thick), and bulk Si(100). Reactive RF sputtering of nitrogenated amorphous carbon (a-CNx) films was investigated by introducing nitrogen into the a-C films during film growth by using an argon-nitrogen gas mixture as the sputtering gas. The alloying effect of nitrogen on the film growth and properties, such as hardness and surface energy, was studied and interpreted in terms of the changes in the plasma environment induced due to differences in the composition of the sputtering gas mixture. The thermal

  16. Depositing highly adhesive optical thin films on acrylic substrates.

    PubMed

    Takahashi, Tomoaki; Harada, Toshinori; Murotani, Hiroshi; Matumoto, Shigeharu

    2014-02-01

    Optical thin films are used to control the reflectance and transmittance of optical components. However, conventional deposition technologies applicable to organic (plastic) substrates typically result in weak adhesion. We overcame this problem by using vacuum deposition in combination with sputtering to directly deposit a SiO2 optical thin film onto an acrylic resin substrate. We observed neither yellowing nor deformation. The hardness of the film is 2H as measured by the pencil hardness test, indicating successful modulation of optical properties without sacrificing substrate hardness.

  17. Study of Optical and Electrical Properties of In2S3:Sn Films Deposited by Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Kraini, M.; Bouguila, N.; Halidou, I.; Moadhen, A.; Vázquez-Vázquez, C.; López-Quintela, M. A.; Alaya, S.

    2015-07-01

    Tin-doped In2S3 films were grown by the chemical spray pyrolysis method using compressed air as a carrier gas. Tin is incorporated in the solution using SnCl4. Structural and optical properties of films were investigated by x-ray diffraction (XRD), absorption, Raman and photoluminescence spectroscopies. Field emission scanning electron microscopy (FESEM) and energy dispersive x-ray spectroscopy were used to explore the surface morphology. The properties of In2S3 thin films are influenced by Sn doping. XRD studies revealed that the deposited films were polycrystalline in nature exhibiting cubic structure and oriented preferentially towards (111). According to FESEM, the surface morphology of the films was free of defects. Raman studies showed different peaks related to In2S3 phase and did not show any secondary phases of In-Sn and Sn-S. In2S3:Sn films exhibited transparency over 60-85% in the visible and infrared regions. The optical band gap was found to vary in the range 2.71-2.58 eV for direct transitions. The room temperature photoluminescence (PL) studies revealed two PL bands, centered at 529 nm (band A) and 725 nm (band B). From these results, one can conclude that our material can be used as transmittive windows in low-cost solar cells. The conductance and capacitance characterization at ambient temperature were also investigated and gave interesting physical properties for photovoltaic applications.

  18. Charge Carrier Dynamics and Mobility Determined by Time-Resolved Terahertz Spectroscopy on Films of Nano-to-Micrometer-Sized Colloidal Tin(II) Monosulfide.

    PubMed

    Alberding, Brian G; Biacchi, Adam J; Walker, Angela R Hight; Heilweil, Edwin J

    2016-07-21

    Tin(II) monosulfide (SnS) is a semiconductor material with an intermediate band gap, high absorption coefficient in the visible range, and earth abundant, non-toxic constituent elements. For these reasons, SnS has generated much interest for incorporation into optoelectronic devices, but little is known concerning the charge carrier dynamics, especially as measured by optical techniques. Here, as opposed to prior studies of vapor deposited films, phase-pure colloidal SnS was synthesized by solution chemistry in three size regimes, ranging from nanometer- to micron-scale (SnS small nanoparticles, SnS medium 2D nanosheets, and SnS large 2D μm-sheets), and evaluated by time-resolved terahertz spectroscopy (TRTS); an optical, non-contact probe of the photoconductivity. Dropcast films of the SnS colloids were studied by TRTS and compared to both thermally annealed films and dispersed suspensions of the same colloids. TRTS results revealed that the micron-scale SnS crystals and all of the annealed films undergo decay mechanisms during the first 200 ps following photoexcitation at 800 nm assigned to hot carrier cooling and carrier trapping. The charge carrier mobility of both the dropcast and annealed samples depends strongly on the size of the constituent colloids. The mobility of the SnS colloidal films, following the completion of the initial decays, ranged from 0.14 cm(2)/V·s for the smallest SnS crystals to 20.3 cm(2)/V·s for the largest. Annealing the colloidal films resulted in a ~ 20 % improvement in mobility for the large SnS 2D μm-sheets and a ~ 5-fold increase for the small nanoparticles and medium nanosheets.

  19. Sputter deposition of metallic thin film and directpatterning

    SciTech Connect

    Ji, L.; Chen, Y.; Jiang, X.; Ji, Q.; Leung, K.-N.

    2005-09-09

    A compact apparatus is developed for deposition of metal thin film. The system employs an RF discharge plasma source with a straight RF antenna, which is made of or covered with deposition material, serving as sputtering target at the same time. The average deposition rate of copper thin film is as high as 450nm/min. By properly allocating the metal materials on the sputtering antenna, mixture deposition of multiple metal species is achieved. Using an ion beam imprinting scheme also taking advantage of ion beam focusing technique, two different schemes of direct patterning deposition process are developed: direct depositing patterned metallic thin film and resistless ion beam sputter patterning. Preliminary experiments have demonstrated direct pattern transfer from a template with feature size of micro scale; patterns with more than 10x reduction are achieved by sputtering patterning method.

  20. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-06-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

  1. Room temperature deposition of zinc oxide thin films by rf-magnetron sputtering for application in solar cells

    NASA Astrophysics Data System (ADS)

    Sanal, K. C.; Trujillo, R. R.; Nair, P. K.; Nair, M. T. S.

    2016-09-01

    Recent reports indicate that thin films of oxides of zinc: ZnO, Zn(O,S), or Zn-Mg-O, could be a better buffer component than CdS to provide an adequate band alignment with orthorhombic tin sulphide in thin lm solar cells. Thin films of ZnO were grown by rf-magnetron sputtering on different substrates at room temperature. Thin films of ZnO obtained by different deposition methods show hexagonal crystal structure, usually with a preferential orientation of (002) crystallographic planes parallel to the substrate surface. However, in the present study XRD patterns indicate that thicker ZnO films on glass substrates have preferential growth of (103) planes, while that on chemically deposited CdS or ZnS films preferential orientation of (002) planes persists. Bandgap of ZnO films increases from 3.2 eV to 3.4 eV when the chamber pressure used for deposition varies from 2.3 mTorr to 6 mTorr. ZnO films were incorporated in a solar cell structure stainless steel/SnS(cubic)/SnS(orthorhombic)/SnS(cubic)/CdS/ZnO/ZnO:Al. It showed open-circuit voltage of 0.318 V, short-circuit current density of 3.6 mA/cm2 and conversion efficiency of 0.82%.

  2. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    NASA Astrophysics Data System (ADS)

    Härkönen, J.; Ott, J.; Mäkelä, M.; Arsenovich, T.; Gädda, A.; Peltola, T.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Junkes, A.; Niinistö, J.; Ritala, M.

    2016-09-01

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few μm of physical size required in ultra-fine pitch pixel detectors.

  3. Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

    NASA Astrophysics Data System (ADS)

    Sall, Thierno; Marí Soucase, Bernabé; Mollar, Miguel; Hartitti, Bouchaib; Fahoume, Mounir

    2015-01-01

    In2S3 thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In2S3 thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optical band gap was determined based on optical transmission measurements. The indium sulfide phase exhibited a preferential orientation in the (0, 0, 12) crystallographic direction according to the XRD analysis. The phonon vibration modes determined by Raman spectroscopy also confirmed the presence of the In2S3 phase in our samples. According to SEM, the surface morphologies of the films were free of defects. The optical band gap energy varied from 2.82 eV to 2.95 eV.

  4. Electrochemical fabrication and optical properties of porous tin oxide films with structural colors

    SciTech Connect

    Cheng, Hua; Shu, Shiwei; Lee, Chris; Zeng, Shanshan; Lu, Zhouguang; Lu, Jian E-mail: yangli@cityu.edu.hk; Li, Yang Yang E-mail: yangli@cityu.edu.hk

    2014-10-21

    Photonic crystals with porous features not only provide the capability to control light but also enable structural colors that are environmentally sensitive. Here, we report a novel kind of tin oxide-based photonic crystal featuring periodically arranged air pores fabricated by the periodic anodization of tin foil. The existence of a photonic band gap in the fabricated structure is verified by its vivid color, and its reflective spectra which are responsive to environmental stimuli. Furthermore, the sample colors (i.e., the photonic band gap positions) can be easily adjusted by manipulating the anodization parameters. The theoretical modeling results of these tin oxide photonic crystals agree well with the reported experimental ones.

  5. Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Seo, Wondeok; Shin, Seokyoon; Ham, Giyul; Lee, Juhyun; Lee, Seungjin; Choi, Hyeongsu; Jeon, Hyeongtag

    2017-03-01

    Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm‑1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2‑ valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400 nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106 Ω·cm as the film thickness increased.

  6. Process and film characterization of chemical-bath-deposited ZnS thin films

    SciTech Connect

    Dona, J.M.; Herrero, J.

    1994-01-01

    Chemical-bath deposition of ZnS thin films from NH{sub 3}/NH{sub 2}-NH{sub 2}/SC(NH{sub 2}){sub 2}/ZnSO{sub 4} solutions has been studied. The effect of various process parameters on the growth and the film quality is presented. A first approach to a mechanistic interpretation of the chemical process is reported. The structural, optical, chemical, and electrical properties of the ZNS thin films deposited by this method have been studied. The electron diffraction (EDS) analysis shows that the films are microcrystalline with a cubic structure. EDS analysis has demonstrated that the films are highly stoichiometric. Scanning electron microscopy studies of the ZnS thin films deposited by this method show that the films are continuous and homogeneous. Electrical conductivity measurements have shown the highly resistivity nature of these films ({sigma} = 10{sup {minus}9} S/cm).

  7. Dual Ion Beam Deposition Of Diamond Films On Optical Elements

    NASA Astrophysics Data System (ADS)

    Deutchman, Arnold H.; Partyka, Robert J.; Lewis, J. C.

    1990-01-01

    Diamond film deposition processes are of great interest because of their potential use for the formation of both protective as well as anti-reflective coatings on the surfaces of optical elements. Conventional plasma-assisted chemical vapor deposition diamond coating processes are not ideal for use on optical components because of the high processing temperatures required, and difficulties faced in nucleating films on most optical substrate materials. A unique dual ion beam deposition technique has been developed which now makes possible deposition of diamond films on a wide variety of optical elements. The new DIOND process operates at temperatures below 150 aegrees Farenheit, and has been used to nucleate and grow both diamondlike carbon and diamond films on a wide variety of optical :taterials including borosilicate glass, quartz glass, plastic, ZnS, ZnSe, Si, and Ge.

  8. Surface treatment of nanocrystal quantum dots after film deposition

    DOEpatents

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  9. Pulsed Laser Deposition of Nanoporous Cobalt Thin Films

    PubMed Central

    Jin, Chunming; Nori, Sudhakar; Wei, Wei; Aggarwal, Ravi; Kumar, Dhananjay; Narayan, Roger J.

    2013-01-01

    Nanoporous cobalt thin films were deposited on anodized aluminum oxide (AAO) membranes at room temperature using pulsed laser deposition. Scanning electron microscopy demonstrated that the nanoporous cobalt thin films retained the monodisperse pore size and high porosity of the anodized aluminum oxide substrates. Temperature- and field-dependent magnetic data obtained between 10 K and 350 K showed large hysteresis behavior in these materials. The increase of coercivity values was larger for nanoporous cobalt thin films than for multilayered cobalt/alumina thin films. The average diameter of the cobalt nanograins in the nanoporous cobalt thin films was estimated to be ~5 nm for blocking temperatures near room temperature. These results suggest that pulsed laser deposition may be used to fabricate nanoporous magnetic materials with unusual properties for biosensing, drug delivery, data storage, and other technological applications. PMID:19198344

  10. Optimization of chemical bath deposited cadmium sulfide thin films

    SciTech Connect

    Oladeji, I.O.; Chow, L.

    1997-07-01

    Cadmium sulfide (CdS) is known to be an excellent heterojunction partner of p-type cadmium telluride (CdTe) or p-type copper indium diselenide (CuInSe{sub 2}) due essentially to its high electron affinity. It is widely used as a window material in high efficiency thin-film solar cells based on CdTe or CuInSe{sub 2} owing to its transparency and photoconductivity among other properties. The authors report the optimization of CdS thin film grown by chemical bath deposition where homogeneous reactions are minimized. The optimum parameters have enabled them to maximize the thickness of the deposited film in a single dip and to grow thicker films by periodically replenishing the concentration of reactants while the substrate remains continuously dipped in the reaction bath. Characterization results reveal the deposited CdS films exhibit improved optical and electrical properties.

  11. Influence of plasma density on the chemical composition and structural properties of pulsed laser deposited TiAlN thin films

    SciTech Connect

    Quiñones-Galván, J. G.; Camps, Enrique; Muhl, S.; Flores, M.; Campos-González, E.

    2014-05-15

    Incorporation of substitutional Al into the TiN lattice of the ternary alloy TiAlN results in a material with improved properties compared to TiN. In this work, TiAlN thin films were grown by the simultaneous ablation of Ti and Al targets in a nitrogen containing reactive atmosphere. The deposit was formed on silicon substrates at low deposition temperature (200 °C). The dependence of the Al content of the films was studied as a function of the ion density of the plasma produced by the laser ablation of the Al target. The plasma parameters were measured by means of a planar Langmuir probe and optical emission spectroscopy. The chemical composition of the films was measured by energy dispersive X-ray spectroscopy. The results showed a strong dependence of the amount of aluminum incorporated in the films with the plasma density. The structural characterization of the deposits was carried out by Raman spectroscopy, X-ray diffraction, and transmission electron microscopy, where the substitutional incorporation of the Al into the TiN was demonstrated.

  12. Wrinkle-free graphene electrodes in zinc tin oxide thin-film transistors for large area applications

    NASA Astrophysics Data System (ADS)

    Lee, Se-Hee; Kim, Jae-Hee; Park, Byeong-Ju; Park, Jozeph; Kim, Hyun-Suk; Yoon, Soon-Gil

    2017-02-01

    Wrinkle-free graphene was used to form the source-drain electrodes in thin film transistors based on a zinc tin oxide (ZTO) semiconductor. A 10 nm thick titanium adhesion layer was applied prior to transferring a conductive graphene film on top of it by chemical detachment. The formation of an interlayer oxide between titanium and graphene allows the achievement of uniform surface roughness over the entire substrate area. The resulting devices were thermally treated in ambient air, and a substantial decrease in field effect mobility is observed with increasing annealing temperature. The increase in electrical resistivity of the graphene film at higher annealing temperatures may have some influence, however the growth of the oxide interlayer at the ZTO/Ti boundary is suggested to be most influential, thereby inducing relatively high contact resistance.

  13. Pulsed Laser Deposition of High Temperature Protonic Films

    NASA Technical Reports Server (NTRS)

    Dynys, Fred W.; Berger, M. H.; Sayir, Ali

    2006-01-01

    Pulsed laser deposition has been used to fabricate nanostructured BaCe(0.85)Y(0.15)O3- sigma) films. Protonic conduction of fabricated BaCe(0.85)Y(0.15)O(3-sigma) films was compared to sintered BaCe(0.85)Y(0.15)O(3-sigma). Sintered samples and laser targets were prepared by sintering BaCe(0.85)Y(0.15)O(3-sigma) powders derived by solid state synthesis. Films 1 to 8 micron thick were deposited by KrF excimer laser on porous Al2O3 substrates. Thin films were fabricated at deposition temperatures of 700 to 950 C at O2 pressures up to 200 mTorr using laser pulse energies of 0.45 - 0.95 J. Fabricated films were characterized by X-ray diffraction, electron microscopy and electrical impedance spectroscopy. Single phase BaCe(0.85)Y(0.15)O(3-sigma) films with a columnar growth morphology are observed with preferred crystal growth along the [100] or [001] direction. Results indicate [100] growth dependence upon laser pulse energy. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C to 900 C. Electrical conduction behavior was dependent upon film deposition temperature. Maximum conductivity occurs at deposition temperature of 900 oC; the electrical conductivity exceeds the sintered specimen. All other deposited films exhibit a lower electrical conductivity than the sintered specimen. Activation energy for electrical conduction showed dependence upon deposition temperature, it varied

  14. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    SciTech Connect

    Stöber, Laura Patocka, Florian Schneider, Michael Schmid, Ulrich; Konrath, Jens Peter Haberl, Verena

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  15. Chemical vapor deposition and characterization of tungsten boron alloy films

    SciTech Connect

    Smith, P.M.; Fleming, J.G.; Lujan, R.D.; Roherty-Osmun, E.; Reid, J.S.; Hochberg, A.K.; Roberts, D.A.

    1993-11-01

    A low pressure chemical vapor deposition (LPCVD) process for depositing W{sub X}B{sub (1-X)} films from WF{sub 6} and B{sub 2}H{sub 6} is described. The depositions were performed in a cold wall reactor on 6 in. Si wafers at 400C. During deposition, pressure was maintained at a fixed level in the range of 200 to 260 mTorr. Ratio of WF{sub 6}/B{sub 2}H{sub 6} was varied from 0.05 to 1.07. Carrier gas was either 100 sccm of Ar with a gas flow of 308 to 591 sccm, or 2000 sccm of Ar and 2000 sccm of H{sub 2} with the overall gas flow from 4213 to 4452 sccm. Two stable deposition regions were found separated by an unstable region that produced non-uniform films. The B-rich films produced in one of the stable deposition regions had W concentrations of 30 at.% and resistivities between 200 and 300 {mu}ohm{center_dot}cm. The W-rich films produced in the other stable deposition region had W concentrations of 80 at.% and resistivities of 100 {mu}ohm{center_dot}cm. As-deposited films had densities similar to bulk material of similar stoichiometry. Barrier properties of the films against diffusion of Cu to 700C in vacuum were measured by 4-point probe. Also, annealing was carried out to 900C in order to determine phases formed as the films crystallize. These studies indicate that W{sub X}B{sub (1-X)} films may be useful barriers in ULSI metallization applications.

  16. Fundamentals of sol-gel film deposition

    SciTech Connect

    Brinker, C.J.; Anderson, M.T.; Bohuszewicz, T.; Ganguli, R.; Lu, Y.; Lu, M.

    1996-12-31

    Results appear to confirm the concept of surfactant-templating of thin film mesostructures. Final film pore structure depends on starting surfactant and water concentrations and process time scale (governed by evaporation rate). Surfactant ordering at substrate-film and film-vapor interfaces orients the porosity of adjoining films, leading to graded structures. SAW experiments show that depending on processing conditions, the porosity may be open or closed (restricted). Open porosity is monosized. Upon pyrolysis, lamellar structures collapse, while the hexagonal structures persist; when both hexagonal and lamellar structures are present, the hexagonal may serve to pillar the lamellar, avoiding its complete collapse. Thick lamellar films can be prepared because the surfactant mechanically decouples stress development in adjoining layers. Upon drying and heating, each individual layer can shrink due to continuing condensation reactions without accumulating stress. During surfactant pyrolysis, the layers coalesce to form a thick crack-free layer. Formation of closed porosity films is discussed.

  17. Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide

    NASA Technical Reports Server (NTRS)

    Gessert, T. A.; Li, X.; Wanlass, M. W.; Nelson, A. J.; Coutts, T. J.

    1990-01-01

    While dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.

  18. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    NASA Astrophysics Data System (ADS)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  19. Growth of tin oxide thin films composed of nanoparticles on hydrophilic and hydrophobic glass substrates by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Paloly, Abdul Rasheed; Satheesh, M.; Martínez-Tomás, M. Carmen; Muñoz-Sanjosé, Vicente; Rajappan Achary, Sreekumar; Bushiri, M. Junaid

    2015-12-01

    In this paper, we have demonstrated the growth of tin oxide (SnO2) thin films composed of nanoparticles on hydrophobic (siliconized) and hydrophilic (non-siliconized) glass substrates by using the spray pyrolysis technique. X-ray diffraction (XRD) analysis confirmed the formation of SnO2 thin films with tetragonal rutile-phase structure. Average particle size of nanoparticles was determined to be in the range of 3-4 nm measured from the front view images obtained by a field emission gun scanning electron microscope (FESEM), while the size of nanoparticle clusters, when present, were in the range of 11-20 nm. Surface morphology of SnO2 films grown over hydrophobic substrates revealed larger isolated particles which are less crowded compared to the highly crowded and agglomerated smaller particles in films on hydrophilic substrates. Blue shift in the band gap is observed in samples in which the average particle size is slightly larger than the exciton Bohr radius. Photoluminescence (PL) analysis of samples grown over hydrophobic substrates exhibited an intense defect level emission and a weak near band edge emission. The enhanced visible emission from these SnO2 thin films is attributed to lattice defects formed during the film growth due to the mismatch between the film and the hydrophobic substrate surface.

  20. Thin film zinc oxide deposited by CVD and PVD

    NASA Astrophysics Data System (ADS)

    Hamelmann, Frank U.

    2016-10-01

    Zinc oxide is known as a mineral since 1810, but it came to scientific interest after its optoelectronic properties found to be tuneable by p-type doping. Since the late 1980’s the number of publications increased exponentially. All thin film deposition technologies, including sol-gel and spray pyrolysis, are able to produce ZnO films. However, for outstanding properties and specific doping, only chemical vapor deposition and physical vapor deposition have shown so far satisfying results in terms of high conductivity and high transparency. In this paper the different possibilities for doping will be discussed, some important applications of doped ZnO thin films will be presented. The deposition technologies used for industrial applications are shown in this paper. Especially sputtering of aluminium doped Zinc Oxide (ZnO:Al or AZO) and LPCVD of boron doped Zinc Oxide (ZnO:B or BZO) are used for the commercial production of transparent conductive oxide films on glass used for thin film photovoltaic cells. For this special application the typical process development for large area deposition is presented, with the important trade-off between optical properties (transparency and ability for light scattering) and electrical properties (conductivity). Also, the long term stability of doped ZnO films is important for applications, humidity in the ambient is often the reason for degradation of the films. The differences between the mentioned materials are presented.

  1. Stress development during deposition of CNx thin films

    NASA Astrophysics Data System (ADS)

    Broitman, E.; Zheng, W. T.; Sjöström, H.; Ivanov, I.; Greene, J. E.; Sundgren, J.-E.

    1998-05-01

    We have investigated the influence of deposition parameters on stress generation in CNx (0.3films deposited onto Si(001) substrates by reactive magnetron sputtering of C in pure N2 discharges. Film stress, σ, which in all cases is compressive, decreases with an increase in the N2 pressure, PN2, due to structural changes induced by the pressure-dependent variation in the average energy of particles bombarding the film during deposition. The film stress σ is also a function of the film growth temperature, Ts, and exhibits a maximum value of ˜5 GPa at 350 °C. Under these conditions, the films have a distorted microstructure consisting of a three-dimensional, primarily sp2 bonded, network. In contrast, films deposited at Ts<200 °C with a low stress are amorphous. At 350 °Cfilms grown at 350 °C exhibit the highest hardness and elasticity.

  2. On the influence of DC electric fields on the aerosol assisted chemical vapor deposition growth of photoactive titanium dioxide thin films.

    PubMed

    Romero, Luz; Binions, Russell

    2013-11-05

    Titanium dioxide thin films were deposited on fluorine doped tin oxide glass substrate from the electric field assisted aerosol chemical vapor deposition (EACVD) reaction of titanium isopropoxide (TTIP, Ti(OC3H7)4) in toluene on glass substrates at a temperature of 450 °C. DC electric fields were generated by applying a potential difference between the electrodes of the transparent coated oxide coated glass substrates during the deposition. The deposited films were characterized using scanning electron microscopy, X-ray diffraction, atomic force microscopy, Raman spectroscopy, and UV-vis spectroscopy. The photoactivity and hydrophilicity of the deposited films were also analyzed using a dye-ink test and water-contact angle measurements. The characterization work revealed that the incorporation of DC electric fields produced significant reproducible changes in the film microstructure, preferred crystallographic orientation, roughness, and film thickness. Photocatalytic activity was calculated from the half-time (t1/2) or time taken to degrade 50% of the initial resazurin dye concentration. A large improvement in photocatalytic activity was observed for films deposited using an electric field with a strong orientation in the (004) direction (t1/2 17 min) as compared to a film deposited with no electric field (t1/2 40 min).

  3. Simultaneous Optimization of Nanocrystalline SnO2 Thin Film Deposition Using Multiple Linear Regressions

    PubMed Central

    Ebrahimiasl, Saeideh; Zakaria, Azmi

    2014-01-01

    A nanocrystalline SnO2 thin film was synthesized by a chemical bath method. The parameters affecting the energy band gap and surface morphology of the deposited SnO2 thin film were optimized using a semi-empirical method. Four parameters, including deposition time, pH, bath temperature and tin chloride (SnCl2·2H2O) concentration were optimized by a factorial method. The factorial used a Taguchi OA (TOA) design method to estimate certain interactions and obtain the actual responses. Statistical evidences in analysis of variance including high F-value (4,112.2 and 20.27), very low P-value (<0.012 and 0.0478), non-significant lack of fit, the determination coefficient (R2 equal to 0.978 and 0.977) and the adequate precision (170.96 and 12.57) validated the suggested model. The optima of the suggested model were verified in the laboratory and results were quite close to the predicted values, indicating that the model successfully simulated the optimum conditions of SnO2 thin film synthesis. PMID:24509767

  4. Diamond film deposition using microwave plasmas under low pressures

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.; Rich, D. H.

    1991-01-01

    Microwave plasma depositions of diamond films have been investigated under low pressures of 10 mTorr to 10 Torr, at low substrate temperatures of 400 to 750 C, using high methane concentrations of 5 to 15 percent and oxygen concentrations of 5 to 10 percent in hydrogen plasmas. The deposition system consists of a microwave plasma chamber, a downstream deposition chamber, and a RF induction-heated sample stage. The deposition system can be operated in either high-pressure microwave or electron cyclotron resonance (ECR) modes by varying the sample stage position. Cathodoluminescence (CL) studies on diamond films deposited at 10 Torr pressure show that CL emissions at 430, 480, 510, 530, 560, 570 and 740 nm can be employed to characterize the quality of diamond films. High-quality, well-faceted diamond films have been deposited at 10 Torr and 600 C using 5 percent CH4 and 5 percent O2 in H2 plasmas; CL measurements on these films show very low N impurities and no detectable Si impurities. Diamond nucleation on SiC has been demonstrated by depositing well-faceted diamond crystallites on SiC-coated Si substrates.

  5. Reactive ion beam deposition of aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Bhat, S.; Ashok, S.; Fonash, S. J.; Tongson}, L.

    1985-07-01

    Aluminum nitride thin films have been prepared at room temperature by reactive ion beam sputtering for potential use as a passivant and diffusion/anneal cap in compound semiconductor technology. The electrical and optical pro-perties of these films have been studied along with the in-fluence of thermal annealing on the material characteristics. The quality of the films has also been found to improve in the presence of atomic hydrogen during the deposition.

  6. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    PubMed Central

    Daud, Mohd Norizam Md; Zakaria, Azmi; Jafari, Atefeh; Ghazali, Mohd Sabri Mohd; Abdullah, Wan Rafizah Wan; Zainal, Zulkarnain

    2012-01-01

    CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111) orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established. PMID:22754325

  7. Characterization of CdTe films deposited at various bath temperatures and concentrations using electrophoretic deposition.

    PubMed

    Daud, Mohd Norizam Md; Zakaria, Azmi; Jafari, Atefeh; Ghazali, Mohd Sabri Mohd; Abdullah, Wan Rafizah Wan; Zainal, Zulkarnain

    2012-01-01

    CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111) orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  8. Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering

    SciTech Connect

    Fang, Feng; Zhang, Yeyu; Wu, Xiaoqin; Shao, Qiyue; Xie, Zonghan

    2015-08-15

    Graphical abstract: The best SnO{sub 2}:N TCO film: about 80% transmittance and 9.1 × 10{sup −4} Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO{sub 2}:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10{sup −4} Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO{sub 2}:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO{sub 2}:N films were amorphous state, and O/Sn ratios of SnO{sub 2}:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO{sub 2}:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO{sub 2}:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO{sub 2}:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10{sup −4} Ω cm.

  9. Vacuum deposition of stoichiometric crystalline PbS films: The effect of sulfurizing environment during deposition

    NASA Astrophysics Data System (ADS)

    Singh, B. P.; Kumar, R.; Kumar, A.; Tyagi, R. C.

    2015-10-01

    Thin film of lead sulfide (PbS) was deposited onto highly cleaned glass and quartz substrates using a vacuum thermal evaporation technique. The effect of the sulfurizing environment on the growth and properties of vacuum-deposited PbS thin film was studied. The ambient sulfurizing environment was created by thermal decomposition of thiourea inside the vacuum chamber during deposition to maintain the stoichiometry and quality of the PbS film. The sulfurizing gas H2S, produced in the thermal decomposition of the solid sulfur containing thiourea readily combines with the cations (Pb2+) without leaving any anions (S2-) at the substrates and also has not produced any excess of sulfur at the substrates. The deposited film was characterized by optical spectroscopy, x-ray diffraction patterns, scanning electron micrographs with energy dispersive analysis of x-rays, and atomic force micrographs. The physical characterization of the deposited PbS film revealed that the surface of film grown in the sulfurizing environment improved and contained more stoichiometric sulfur in comparison to film deposited without the sulfurizing environment.

  10. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  11. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  12. Process Tuning of Silica Thin-Film Deposition

    SciTech Connect

    Keck,J.; Oliver,J.B.; Gruschow,V.; Spaulding,J.; Howe,J.

    2004-12-17

    Use of high-resolution deposition-rate monitoring and programmatic control of electron-beam position results in improvements in rate consistency and uniformity of source depletion during SiO2 thin-film deposition by electron-beam evaporation.

  13. Resonant infrared pulsed laser deposition of cyclic olefin copolymer films

    NASA Astrophysics Data System (ADS)

    Singaravelu, S.; Klopf, J. M.; Schriver, K. E.; Park, H. K.; Kelley, M. J.; Haglund, R. F.

    2014-03-01

    Barrier materials on thin-film organic optoelectronic devices inhibit the uptake of water, oxygen, or environmental contaminants, and fabricating them is a major challenge. By definition, these barrier layers must be insoluble, so the usual routes to polymer- or organic-film deposition by spin coating are not problematic. In this paper, we report comparative studies of pulsed laser deposition of cyclic olefin copolymer (COC), an excellent moisture barrier and a model system for a larger class of protective materials that are potentially useful in organic electronic devices, such as organic light-emitting diodes (OLEDs). Thin films of COC were deposited by resonant and nonresonant infrared pulsed laser ablation of solid COC targets, using a free-electron laser tuned to the 3.43 μm C-H stretch of the COC, and a high-intensity nanosecond Q-switched laser operated at 1064 nm. The ablation craters and deposited films were characterized by scanning-electron microscopy, Fourier-transform infrared spectrometry, atomic-force microscopy, high-resolution optical microscopy, and surface profilometry. Thermal-diffusion calculations were performed to determine the temperature rise induced in the film at the C-H resonant wavelength. The results show that resonant infrared pulsed laser deposition (RIR-PLD) is an effective, low-temperature thin-film deposition technique that leads to evaporation and deposition of intact molecules in homogeneous, smooth films. Nonresonant PLD, on the other hand, leads to photothermal damage, degradation of the COC polymers, and to the deposition only of particulates.

  14. Self-terminating growth of platinum films by electrochemical deposition.

    PubMed

    Liu, Yihua; Gokcen, Dincer; Bertocci, Ugo; Moffat, Thomas P

    2012-12-07

    A self-terminating rapid electrodeposition process for controlled growth of platinum (Pt) monolayer films from a K(2)PtCl(4)-NaCl electrolyte has been developed that is tantamount to wet atomic layer deposition. Despite the deposition overpotential being in excess of 1 volt, Pt deposition was quenched at potentials just negative of proton reduction by an alteration of the double-layer structure induced by a saturated surface coverage of underpotential deposited H (H(upd)). The surface was reactivated for further Pt deposition by stepping the potential to more positive values, where H(upd) is oxidized and fresh sites for the adsorption of PtCl(4)(2-) become available. Periodic pulsing of the potential enables sequential deposition of two-dimensional Pt layers to fabricate films of desired thickness, relevant to a range of advanced technologies.

  15. Synthesis and characterization of polycrystalline semiconductor Caesium-Tin tri-Iodide thin-films

    NASA Astrophysics Data System (ADS)

    Chen, Zhuo

    cost effective, various low cost materials synthesis methods for CsSnI3 are also described in this thesis. CsSnI3 thin-films can be now inexpensively deposited on to glass or other low-cost substrates. I believe that the CsSnI3 based materials are ideally suited for many applications such as lasers, light-emitting diodes, integrated photonic devices such as infrared electro-optic modulator, solar cells, and even more specialized applications such as spectral solar concentrators.

  16. Electro deposition of cuprous oxide for thin film solar cell applications

    NASA Astrophysics Data System (ADS)

    Shahrestani, Seyed Mohammad

    p and n type copper oxide semiconductor layers were fabricated by electrochemistry using new approaches for photovoltaic applications. Thin films were electroplated by cathodic polarization on a copper foil or indium tin oxide (ITO) substrates. The optimum deposition conditions (composition, pH and temperature of the electrolyte and applied potential) of the layers as thin films have been identified; in particular the conditions that allow getting the n-type layers have been well identified for the first time. The configuration of a photo - electrochemical cell was used to characterize the spectral response of the layers. It was shown that the p type layers exhibit a photocurrent in the cathode potential region and n layers exhibit photo current in the anode potential region. Measurements of electrical resistivity of electro chemically deposited layers of p and n type Cu2O, showed that the resistivity of p-type Cu2O varies from 3.2 x 105 to 2.0 x 108 Ocm. These values depend the electrodepositing conditions such as the pH of the solution, the deposition potential and temperature. The influence of several plating parameters of the p type layers of Cu2O, such as applied potential, pH and temperature of the bath on the chemical composition, degree of crystallinity, grain size and orientation parameters of the sample was systematically studied using X-ray diffraction and scanning electron microscopy. Depending of the electro-deposition potential, two different surface morphologies with various preferential crystal orientations were obtained for the temperatures of the electro-deposition of 30 °C and pH 9. For the same temperature, the layers of p type Cu2O of highly crystalline p type are obtained at pH 12, indicating that the crystallinity depends on the pH of the bath. Also, it has been shown that the morphology of Cu2O layers was changed by varying the potential and the duration of deposition, as well as the temperature of the solution. The conditions for the

  17. Nickel hydroxide deposited indium tin oxide electrodes as electrocatalysts for direct oxidation of carbohydrates in alkaline medium

    NASA Astrophysics Data System (ADS)

    Ganesh, V.; Farzana, S.; Berchmans, Sheela

    In this work, the direct electrochemical oxidation of carbohydrates using nickel hydroxide modified indium tin oxide (ITO) electrodes in alkaline medium is demonstrated; suggesting the feasibility of using carbohydrates as a novel fuel in alkaline fuel cells applications. The chosen monosaccharides are namely glucose and fructose; disaccharides such as sucrose and lactose; and sugar acid like ascorbic acid for this study. ITO electrodes are chemically modified using a hexagonal lyotropic liquid crystalline phase template electrodeposition of nickel. Structural morphology, growth, orientation and electrochemical behaviour of Ni deposits are characterized using SEM, XRD, XPS and cyclic voltammetry (CV), respectively. Further electrochemical potential cycling process in alkaline medium is employed to convert these Ni deposits into corresponding nickel hydroxide modified electrodes. These electrodes are used as novel platform to perform the electrocatalytic oxidation of various carbohydrates in alkaline medium. It was found that bare and Ni coated ITO electrodes are inactive towards carbohydrates oxidation. The heterogeneous rate constant values are determined and calculated to be two orders of magnitude higher in the case of template method when compared to non-template technique. The observed effect is attributed to the synergistic effect of higher surface area of these deposits and catalytic ability of Ni(II)/Ni(III) redox couple.

  18. Annealing effects on structural, electrical and optical properties of antimony-tinoxide thin films deposited by sol gel dip coating technique

    NASA Astrophysics Data System (ADS)

    Lekshmy, S. Sujatha; Anitha, V. S.; Berlin, I. John; Joy, K.

    2014-01-01

    Antimony-doped tin dioxide possess interesting physical and chemical properties. These properties have a wide range of applications such as catalysis and optoelectronic devices. In the present study, antimony-doped tin oxide (SnO2:Sb) thin films were deposited on the quartz substrates by sol-gel dip coating technique. The films were annealed at temperatures 350°C, 550°C and 850°C in air for 2 hours. The structure and surface morphologies were observed by X-ray diffraction (XRD) and Scanning electron microscopy (SEM). XRD patterns shows tetragonal structure for the SnO2:Sb films annealed at different temperatures. Crystallite size increased from 6 to 14 nm as annealing temperature increased from 350°C to 850°C. SEM studies reveals crack free and smooth surface for all the films. The grains are found to be homogenously distributed for films annealed at higher temperature. The electrical conductivity of the films annealed at 350°C and 550°C decreased and increased for the films annealed at 850°C. The optical properties of the films were investigated in the UV-visible-NIR region (200-900 nm) using UV spectra. The transmittance of the films decreased for films annealed at higher temperature. The optical energy band gap values (4.13 eV-4.83 eV) increased with the increase in annealing temperature.

  19. Annealing effects on structural, electrical and optical properties of antimony-tinoxide thin films deposited by sol gel dip coating technique

    SciTech Connect

    Lekshmy, S. Sujatha Anitha, V. S. Berlin, I. John Joy, K.

    2014-01-28

    Antimony-doped tin dioxide possess interesting physical and chemical properties. These properties have a wide range of applications such as catalysis and optoelectronic devices. In the present study, antimony-doped tin oxide (SnO2:Sb) thin films were deposited on the quartz substrates by sol-gel dip coating technique. The films were annealed at temperatures 350°C, 550°C and 850°C in air for 2 hours. The structure and surface morphologies were observed by X-ray diffraction (XRD) and Scanning electron microscopy (SEM). XRD patterns shows tetragonal structure for the SnO2:Sb films annealed at different temperatures. Crystallite size increased from 6 to 14 nm as annealing temperature increased from 350°C to 850°C. SEM studies reveals crack free and smooth surface for all the films. The grains are found to be homogenously distributed for films annealed at higher temperature. The electrical conductivity of the films annealed at 350°C and 550°C decreased and increased for the films annealed at 850°C. The optical properties of the films were investigated in the UV-visible-NIR region (200-900 nm) using UV spectra. The transmittance of the films decreased for films annealed at higher temperature. The optical energy band gap values (4.13 eV-4.83 eV) increased with the increase in annealing temperature.

  20. Aluminosilicate glass thin films elaborated by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Carlier, Thibault; Saitzek, Sébastien; Méar, François O.; Blach, Jean-François; Ferri, Anthony; Huvé, Marielle; Montagne, Lionel

    2017-03-01

    In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

  1. Plasma deposition of polymer composite films incorporating nanocellulose whiskers

    NASA Astrophysics Data System (ADS)

    Samyn, P.; Airoudj, A.; Laborie, M.-P.; Mathew, A. P.; Roucoules, V.

    2011-11-01

    In a trend for sustainable engineering and functionalization of surfaces, we explore the possibilities of gas phase processes to deposit nanocomposite films. From an analysis of pulsed plasma polymerization of maleic anhydride in the presence of nanocellulose whiskers, it seems that thin nanocomposite films can be deposited with various patterns. By specifically modifying plasma parameters such as total power, duty cycle, and monomer gas pressure, the nanocellulose whiskers are either incorporated into a buckled polymer film or single nanocellulose whiskers are deposited on top of a polymeric film. The density of the latter can be controlled by modifying the exact positioning of the substrate in the reactor. The resulting morphologies are evaluated by optical microscopy, AFM, contact angle measurements and ellipsometry.

  2. thin films by an hybrid deposition configuration: pulsed laser deposition and thermal evaporation

    NASA Astrophysics Data System (ADS)

    Escobar-Alarcón, L.; Solís-Casados, D. A.; Perez-Alvarez, J.; Romero, S.; Morales-Mendez, J. G.; Haro-Poniatowski, E.

    2014-10-01

    The aim of this work was to report the application of an hybrid deposition configuration to deposit Titanium dioxide (TiO2) thin films modified with different amounts of bismuth (Bi:TiO2). The samples were synthesized combining a TiO2 laser ablation plasma with a flux of vapor of bismuth produced by thermal evaporation. By varying the deposition rate of Bi it was possible to control the amount of Bi incorporated in the film and consequently the film properties. A detailed compositional, structural, and optical characterization by XPS, RBS, Raman spectroscopy, and UV-Vis spectrometry techniques is discussed. Photocatalytic response of the deposited thin films was studied through the degradation of a malachite green solution.

  3. UV laser deposition of metal films by photogenerated free radicals

    NASA Technical Reports Server (NTRS)

    Montgomery, R. K.; Mantei, T. D.

    1986-01-01

    A novel photochemical method for liquid-phase deposition of metal films is described. In the liquid phase deposition scheme, a metal containing compound and a metal-metal bonded carbonyl complex are dissolved together in a polar solvent and the mixture is irradiated using a UV laser. The optical arrangement consists of a HeCd laser which provides 7 mW of power at a wavelength of 325 nm in the TEM(OO) mode. The beam is attenuated and may be expanded to a diameter of 5-20 mm. Experiments with photochemical deposition of silver films onto glass and quartz substrates are described in detail. Mass spectrometric analysis of deposited silver films indicated a deposition rate of about 1 A/s at incident power levels of 0.01 W/sq cm. UV laser-induced copper and palladium films have also been obtained. A black and white photograph showing the silver Van Der Pauw pattern of a solution-deposited film is provided.

  4. SEM Analysis of Electrophoretically-Deposited Nanoparticle Films

    NASA Astrophysics Data System (ADS)

    Verma, Neil

    Cobalt ferrite nanoparticles (20 nm) were synthesized and electrophoretically deposited onto aluminum foil, graphite paper, and carbon felt in order to study its potential as a cost-effective electrocatalyst for the oxidation of ammonium sulfite to ammonium sulfate in a proposed sulfur ammonia thermochemical cycle. Scanning electron microscopy and linear sweep voltammetry were used to characterize the deposited films and investigate their electrochemical activity. Furthermore, the effects of electrophoretic deposition conditions on deposit morphology and subsequently the effects of deposit morphology on electrochemical activity in 2 M ammonium sulfite were studied to better understand how to improve electrocatalysts. It was found that there is a critical deposit thickness for each substrate, where additional deposited particles reduce overall electrocatalytic activity of the deposits. For graphite paper, this thickness was estimated to be 3 particle layers for the EPD conditions studied. The 3 particle layer film on graphite paper resulted in a 5.5 fold increase in current density from a blank graphite paper substrate. For carbon felt, the deposit thickness threshold was calculated to be 0.13 of a particle layer for the EPD conditions studied. Moreover, this film was found to have a 4.3 fold increase in current density from a blank carbon felt substrate.

  5. Modified chemical route for deposition of molybdenum disulphide thin films

    SciTech Connect

    Vyas, Akshay N. Sartale, S. D.

    2014-04-24

    Molybdenum disulphide (MoS{sub 2}) thin films were deposited on quartz substrates using a modified chemical route. Sodium molybdate and sodium sulphide were used as precursors for molybdenum and sulphur respectively. The route involves formation of tetrathiomolybdate ions (MoS{sub 4}{sup 2−}) and further reduction by sodium borohydride to form MoS{sub 2}. The deposition was performed at room temperature. The deposited films were annealed in argon atmosphere at 1073 K for 1 hour to improve its crystallinity. The deposited films were characterized using scanning electron microscopy (SEM) for morphology, UV-Vis absorption spectroscopy for optical studies and X-ray diffraction (XRD) for structure determination.

  6. Sputter deposited Terfenol-D thin films for multiferroic applications

    NASA Astrophysics Data System (ADS)

    Mohanchandra, K. P.; Prikhodko, S. V.; Wetzlar, K. P.; Sun, W. Y.; Nordeen, P.; Carman, G. P.

    2015-09-01

    In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm) with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011) cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10-6.

  7. Large-Scale Graphene Film Deposition for Monolithic Device Fabrication

    NASA Astrophysics Data System (ADS)

    Al-shurman, Khaled

    Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors. The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an urgent need for a new platform material to replace Si. Graphene is considered a promising material with enormous potential applications in many electronic and optoelectronics devices due to its superior properties. There are several techniques to produce graphene films. Among these techniques, chemical vapor deposition (CVD) offers a very convenient method to fabricate films for large-scale graphene films. Though CVD method is suitable for large area growth of graphene, the need for transferring a graphene film to silicon-based substrates is required. Furthermore, the graphene films thus achieved are, in fact, not single crystalline. Also, graphene fabrication utilizing Cu and Ni at high growth temperature contaminates the substrate that holds Si CMOS circuitry and CVD chamber as well. So, lowering the deposition temperature is another technological milestone for the successful adoption of graphene in integrated circuits fabrication. In this research, direct large-scale graphene film fabrication on silicon based platform (i.e. SiO2 and Si3N4) at low temperature was achieved. With a focus on low-temperature graphene growth, hot-filament chemical vapor deposition (HF-CVD) was utilized to synthesize graphene film using 200 nm thick nickel film. Raman spectroscopy was utilized to examine graphene formation on the bottom side of the Ni film

  8. Growth, characterization and post-processing of inorganic and hybrid organic-inorganic thin films deposited using atomic and molecular layer deposition techniques

    NASA Astrophysics Data System (ADS)

    Abdulagatov, Aziz Ilmutdinovich

    Atomic layer deposition (ALD) and molecular layer deposition (MLD) are advanced thin film coating techniques developed for deposition of inorganic and hybrid organic-inorganic films respectively. Decreasing device dimensions and increasing aspect ratios in semiconductor processing has motivated developments in ALD. The beginning of this thesis will cover study of new ALD chemistry for high dielectric constant Y 2O3. In addition, the feasibility of conducting low temperature ALD of TiN and TiAlN is explored using highly reactive hydrazine as a new nitrogen source. Developments of these ALD processes are important for the electronics industry. As the search for new materials with more advanced properties continues, attention has shifted toward exploring the synthesis of hierarchically nanostructured thin films. Such complex architectures can provide novel functions important to the development of state of the art devices for the electronics industry, catalysis, energy conversion and memory storage as a few examples. Therefore, the main focus of this thesis is on the growth, characterization, and post-processing of ALD and MLD films for fabrication of novel composite (nanostructured) thin films. Novel composite materials are created by annealing amorphous ALD oxide alloys in air and by heat treatment of hybrid organic-inorganic MLD films in inert atmosphere (pyrolysis). The synthesis of porous TiO2 or Al2O3 supported V2O5 for enhanced surface area catalysis was achieved by the annealing of inorganic TiVxOy and AlV xOy ALD films in air. The interplay between phase separation, surface energy difference, crystallization, and melting temperature of individual oxides were studied for their control of film morphology. In other work, a class of novel metal oxide-graphitic carbon composite thin films was produced by pyrolysis of MLD hybrid organic-inorganic films. For example, annealing in argon of titania based hybrid films enabled fabrication of thin films of intimately

  9. Calculating The Resistivity Of A Deposited Film

    NASA Technical Reports Server (NTRS)

    Oberle, Lawrence G.; Fralick, Gustave C.

    1990-01-01

    Iterative procedure computes resistivity from measurements by four-probe method. Computer program and technique developed to aid in solution of class of problems in which measurements of electrical resistivity needed for substance deposited on substrate of higher resistivity than deposited layer.

  10. Methods for making deposited films with improved microstructures

    DOEpatents

    Patten, James W.; Moss, Ronald W.; McClanahan, Edwin D.

    1982-01-01

    Methods for improving microstructures of line-of-sight deposited films are described. Columnar growth defects ordinarily produced by geometrical shadowing during deposition of such films are eliminated without resorting to post-deposition thermal or mechanical treatments. The native, as-deposited coating qualities, including homogeneity, fine grain size, and high coating-to-substrate adherence, can thus be retained. The preferred method includes the steps of emitting material from a source toward a substrate to deposit a coating non-uniformly on the substrate surface, removing a portion of the coating uniformly over the surface, again depositing material onto the surface, but from a different direction, and repeating the foregoing steps. The quality of line-of-sight deposited films such as those produced by sputtering, progressively deteriorates as the angle of incidence between the flux and the surface becomes increasingly acute. Depositing non-uniformly, so that the coating becomes progressively thinner as quality deteriorates, followed by uniformly removing some of the coating, such as by resputtering, eliminates the poor quality portions, leaving only high quality portions of the coating. Subsequently sputtering from a different direction applies a high quality coating to other regions of the surface. Such steps can be performed either simultaneously or sequentially to apply coatings of a uniformly high quality, closed microstructure to three-dimensional or larger planar surfaces.

  11. Nanoscaled tin dioxide films processed from organotin-based hybrid materials: an organometallic route toward metal oxide gas sensors

    NASA Astrophysics Data System (ADS)

    Renard, Laetitia; Babot, Odile; Saadaoui, Hassan; Fuess, Hartmut; Brötz, Joachim; Gurlo, Aleksander; Arveux, Emmanuel; Klein, Andreas; Toupance, Thierry

    2012-10-01

    Nanocrystalline tin dioxide (SnO2) ultra-thin films were obtained employing a straightforward solution-based route that involves the calcination of bridged polystannoxane films processed by the sol-gel process from bis(triprop-1-ynylstannyl)alkylene and -arylene precursors. These films have been thoroughly characterized by FTIR, contact angle measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force (AFM) and scanning electron (SEM) microscopies. Annealing at a high temperature gave 30-35 nm thick cassiterite SnO2 films with a mean crystallite size ranging from 4 to 7 nm depending on the nature of the organic linker in the distannylated compound used as a precursor. In the presence of H2 and CO gases, these layers led to highly sensitive, reversible and reproducible responses. The sensing properties were discussed in regard to the crystallinity and porosity of the sensing body that can be tuned by the nature of the precursor employed. Organometallic chemistry combined with the sol-gel process therefore offers new possibilities toward metal oxide nanostructures for the reproducible and sensitive detection of combustible and toxic gases.Nanocrystalline tin dioxide (SnO2) ultra-thin films were obtained employing a straightforward solution-based route that involves the calcination of bridged polystannoxane films processed by the sol-gel process from bis(triprop-1-ynylstannyl)alkylene and -arylene precursors. These films have been thoroughly characterized by FTIR, contact angle measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force (AFM) and scanning electron (SEM) microscopies. Annealing at a high temperature gave 30-35 nm thick cassiterite SnO2 films with a mean crystallite size ranging from 4 to 7 nm depending on the nature of the organic linker in the distannylated compound used as a precursor. In the presence of H2 and CO gases, these layers led to highly sensitive, reversible and reproducible

  12. Robust infrared-shielding coating films prepared using perhydropolysilazane and hydrophobized indium tin oxide nanoparticles with tuned surface plasmon resonance.

    PubMed

    Katagiri, Kiyofumi; Takabatake, Ryuichi; Inumaru, Kei

    2013-10-23

    Robust infrared (IR)-shielding coating films were prepared by dispersing indium tin oxide (ITO) nanoparticles (NPs) in a silica matrix. Hydrophobized ITO NPs were synthesized via a liquid phase process. The surface plasmon resonance (SPR) absorption of the ITO NPs could be tuned by varying the concentration of Sn doping from 3 to 30 mol %. The shortest SPR wavelength and strongest SPR absorption were obtained for the ITO NPs doped with 10% Sn because they possessed the highest electron carrier density. Coating films composed of a continuous silica matrix homogeneously dispersed with ITO NPs were obtained using perhydropolysilazane (PHPS) as a precursor. PHPS was completely converted to silica by exposure to the vapor from aqueous ammonia at 50 °C. The prepared coating films can efficiently shield IR radiation even though they are more than 80% transparent in the visible range. The coating film with the greatest IR-shielding ability completely blocked IR light at wavelengths longer than 1400 nm. The pencil hardness of this coating film was 9H at a load of 750 g, which is sufficiently robust for applications such as automotive glass.

  13. Formation of Copper Zinc Tin Sulfide Thin Films from Colloidal Nanocrystal Dispersions via Aerosol-Jet Printing and Compaction.

    PubMed

    Williams, Bryce A; Mahajan, Ankit; Smeaton, Michelle A; Holgate, Collin S; Aydil, Eray S; Francis, Lorraine F

    2015-06-03

    A three-step method to create dense polycrystalline semiconductor thin films from nanocrystal liquid dispersions is described. First, suitable substrates are coated with nanocrystals using aerosol-jet printing. Second, the porous nanocrystal coatings are compacted using a weighted roller or a hydraulic press to increase the coating density. Finally, the resulting coating is annealed for grain growth. The approach is demonstrated for making polycrystalline films of copper zinc tin sulfide (CZTS), a new solar absorber composed of earth-abundant elements. The range of coating morphologies accessible through aerosol-jet printing is examined and their formation mechanisms are revealed. Crack-free albeit porous films are obtained if most of the solvent in the aerosolized dispersion droplets containing the nanocrystals evaporates before they impinge on the substrate. In this case, nanocrystals agglomerate in flight and arrive at the substrate as solid spherical agglomerates. These porous coatings are mechanically compacted, and the density of the coating increases with compaction pressure. Dense coatings annealed in sulfur produce large-grain (>1 μm) polycrystalline CZTS films with microstructure suitable for thin-film solar cells.

  14. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, Kevin C.; Kodas, Toivo T.

    1994-01-01

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  15. Pulsed laser deposition of niobium nitride thin films

    SciTech Connect

    Farha, Ashraf Hassan Elsayed-Ali, Hani E.; Ufuktepe, Yüksel; Myneni, Ganapati

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  16. Pulsed laser deposition of niobium nitride thin films

    NASA Astrophysics Data System (ADS)

    Farha, Ashraf Hassan; Ufuktepe, Yüksel; Myneni, Ganapati; Elsayed-Ali, Hani E.

    2015-12-01

    Niobium nitride (NbNx) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbNx films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ˜40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbNx films from mixed β-Nb2N and cubic δ-NbN phases to single hexagonal β-Nb2N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbNx deposited on Si(100) were also investigated. The NbNx films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbNx film morphology and phase.

  17. Vapor-deposited porous films for energy conversion

    DOEpatents

    Jankowski, Alan F.; Hayes, Jeffrey P.; Morse, Jeffrey D.

    2005-07-05

    Metallic films are grown with a "spongelike" morphology in the as-deposited condition using planar magnetron sputtering. The morphology of the deposit is characterized by metallic continuity in three dimensions with continuous and open porosity on the submicron scale. The stabilization of the spongelike morphology is found over a limited range of the sputter deposition parameters, that is, of working gas pressure and substrate temperature. This spongelike morphology is an extension of the features as generally represented in the classic zone models of growth for physical vapor deposits. Nickel coatings were deposited with working gas pressures up 4 Pa and for substrate temperatures up to 1000 K. The morphology of the deposits is examined in plan and in cross section views with scanning electron microscopy (SEM). The parametric range of gas pressure and substrate temperature (relative to absolute melt point) under which the spongelike metal deposits are produced appear universal for other metals including gold, silver, and aluminum.

  18. Chemical vapor deposition and characterization of titanium dioxide thin films

    NASA Astrophysics Data System (ADS)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  19. Control of crystallite size in diamond film chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Moran, Mark B.; Johnson, Linda F.; Klemm, Karl A.

    1992-12-01

    In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.

  20. Film synthesis on powders by cathodic arc plasma deposition

    SciTech Connect

    Anders, A.; Anders, S.; Brown, I.G.; Ivanov, I.C.

    1995-04-01

    Cathodic arc plasma deposition was used to coat Al{sub 2}O{sub 3} powder (mesh size 60) with platinum. The power particles were moved during deposition using a mechanical system operating at a resonance frequency of 20 Hz. Scanning electron microscopy and Auger electron microscopy show that all particles are completely coated with a platinum film having a thickness of about 100 nm. The actual deposition time was only 20 s, thus the deposition rate was very high (5 nm/s).

  1. Characterization of electrophoretic suspension for thin polymer film deposition

    NASA Astrophysics Data System (ADS)

    Mladenova, D.; Weiter, M.; Stepanek, P.; Ouzzane, I.; Vala, M.; Sinigersky, V.; Zhivkov, I.

    2012-03-01

    The optical absorption and fluorescence spectra of poly [2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] toluene solutions and 50:50% toluene/acetonitrile suspensions show clearly distinguishable differences (e.g., peak broadening and shifting), which could be used for characterization of suspensions with different acetonitrile content. The dynamic light scattering (DLS) measurement of the suspensions prepared showed a particle size of 90 nm. Thin films with thicknesses of about 400 nm were prepared by electrophoretic deposition (EPD) and spin coating. As the films are very soft, a contactless optical profilometry techique based on chromatic aberration was used to measure their thickness. AFM imaging of spin coated and EPD films revealed film roughness of 20÷40 nm and 40÷80 nm, respectively. The EPD film roughness seems to be less than the suspension particle size obtained by DLS, probably due to the partial film dissolving by the toluene present in the suspension.

  2. Differences observed in the surface morphology and microstructure of Ni-Fe-Cu ternary thin films electrochemically deposited at low and high applied current densities

    NASA Astrophysics Data System (ADS)

    Sarac, U.; Kaya, M.; Baykul, M. C.

    2016-10-01

    In this research, nanocrystalline Ni-Fe-Cu ternary thin films using electrochemical deposition technique were produced at low and high applied current densities onto Indium Tin Oxide (ITO) coated conducting glass substrates. Change of surface morphology and microstructural properties of the films were investigated. Energy dispersive X-ray spectroscopy (EDX) measurements showed that the Ni-Fe-Cu ternary thin films exhibit anomalous codeposition behaviour during the electrochemical deposition process. From the X-ray diffraction (XRD) analyses, it was revealed that there are two segregated phases such as Cu- rich and Ni-rich within the films. The crystallographic structure of the films was face-centered cubic (FCC). It was also observed that the film has lower lattice micro-strain and higher texture degree at high applied current density. Scanning electron microscopy (SEM) studies revealed that the films have rounded shape particles on the base part and cauliflower-like structures on the upper part. The film electrodeposited at high current density had considerably smaller rounded shape particles and cauliflower-like structures. From the atomic force microscopy (AFM) analyses, it was shown that the film deposited at high current density has smaller particle size and surface roughness than the film grown at low current density.

  3. Aspects of thin film deposition on granulates by physical vapor deposition

    NASA Astrophysics Data System (ADS)

    Eder, Andreas; Schmid, Gerwin H. S.; Mahr, Harald; Eisenmenger-Sittner, Christoph

    2016-11-01

    Thin film and coating technology has entered fields which may show significant deviations from classical coating applications where films are deposited on plane, sometimes large substrates. Often surfaces of small and irregularly shaped bodies have to be improved in respect to electrical, thermal or mechanical properties. Film deposition and characterization on such small substrates is not a trivial task. This specially holds for methods based on Physical Vapor Deposition (PVD) processes such as sputter deposition and its ion- and plasma assisted varieties. Due to their line of sight nature a key issue for homogenous films is efficient intermixing. If this problem is mastered, another task is the prediction and determination of the film thickness on single particles as well as on large scale ensembles thereof. In this work a mechanism capable of uniformly coating up to 1000 cm3 of granulate with particle sizes ranging from approx. 10 μm to 150 μm by magnetron sputtering is thoroughly described. A method for predicting the average film thickness on the particles is presented and tested for several differently shaped objects like microspheres, irregular grains of sinter powder or micro diamonds. For assessing the film thickness on single particles as well as on particle ensembles several complementary methods based on optics, X-ray analysis and gravimetry are employed. Their respective merits and limitations are discussed. Finally an outlook on adapting the described technology for surface modification by plasma based reactive and non-reactive processes is given.

  4. Electron Bombardment of Certain Thin Films during Deposition

    NASA Astrophysics Data System (ADS)

    Browning, Stephen Douglas

    The performance of multilayer thin film optical filters depends largely on the microstructure of the component layers. This microstructure varies with the deposition parameters inside the coating chamber. By controlling these parameters, optical filters can be produced to exacting specifications. In 1947, R. M. Rice established the technique of bombarding the substrate with electrons of several kilovolts as the fils were being deposited. This process improved the durability of zinc sulfide films dramatically. This study was performed to quantitatively analyze the effects of bombardment on film microstructure and subsequent effects on optical and mechanical properties. I installed an electron source filament inside the coating chamber and electrically isolated the substrate holder, which was connected to a positive high voltage supply. An accelerating loop placed just above the filament enhanced its efficiency. The source was calibrated by measuring the current through the substrate holder. Single layer films of five different materials were deposited, each at its own set of electron bombardment parameters. The microstructure was analyzed with an X -ray diffractometer and a transmission electron microscope. Optical properties were measured with guided waves, induced absorption, and spectrophotometric analysis. Film durability was analyzed with scotch tape, eraser, and controlled humidity tests. Antimony trioxide films showed a shift in lattice orientation, but this did not affect columnar structure or macroscopic quantities. Potassium hexafluorozirconate films showed elimination of both crystal structure and columnar growth, resulting in slightly reduced durability and some absorption. Silicon monoxide films suffered no change in structure or properties. Zinc sulfide films demonstrated the change in crystal structure, which was quantified and shown to improve moisture resistance. Optical properties were unaffected. Magnesium fluoride films showed a slight increase

  5. Fractal structure of films deposited in a tokamak

    SciTech Connect

    Budaev, V. P.; Khimchenko, L. N.

    2007-04-15

    The surface of amorphous films deposited in the T-10 tokamak was studied in a scanning tunnel microscope. The surface relief on a scale from 10 nm to 100 {mu}m showed a stochastic surface topography and revealed a hierarchy of grains. The observed variety of irregular structures of the films was studied within the framework of the concept of scale invariance using the methods of fractal geometry and statistical physics. The experimental probability density distribution functions of the surface height variations are close in shape to the Cauchy distribution. The stochastic surface topography of the films is characterized by a Hurst parameter of H = 0.68-0.85, which is evidence of a nontrivial self-similarity of the film structure. The fractal character and porous structure of deposited irregular films must be considered as an important issue related to the accumulation of tritium in the ITER project. The process of film growth on the surface of tokamak components exposed to plasma has been treated within the framework of the general concept of inhomogeneous surface growth. A strong turbulence of the edge plasma in tokamaks can give rise to fluctuations in the incident flux of particles, which leads to the growth of fractal films with grain dimensions ranging from nano-to micrometer scale. The shape of the surface of some films found in the T-10 tokamak has been interpreted using a model of diffusion-limited aggregation (DLA). The growth of films according to the discrete DLA model was simulated using statistics of fluctuations observed in a turbulent edge plasma of the T-10 tokamak. The modified DLA model reproduces well the main features of the surface of some films deposited in tokamaks.

  6. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    SciTech Connect

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  7. Matrix assisted pulsed laser deposition of melanin thin films

    NASA Astrophysics Data System (ADS)

    Bloisi, F.; Pezzella, A.; Barra, M.; Chiarella, F.; Cassinese, A.; Vicari, L.

    2011-07-01

    Melanins constitute a very important class of organic pigments, recently emerging as a potential material for a new generation of bioinspired biocompatible electrically active devices. In this paper, we report about the deposition of synthetic melanin films starting from aqueous suspensions by matrix assisted pulsed laser evaporation (MAPLE). In particular, we demonstrate that it is possible to deposit melanin films by MAPLE even if melanin (a) is not soluble in water and (b) absorbs light from UV to IR. AFM images reveal that the film surface features are highly depending on the deposition parameters. UV-VIS and FTIR spectra show both the optical properties and the molecular structure typical of melanins are preserved.

  8. Deposition of superconducting thin films by laser ablation processing

    SciTech Connect

    Kim, B.F.; Bohandy, J.; Moorjani, K.; Adrian, F.J.

    1988-02-25

    Superconducting thin films, approximately 1 ..mu..m thick and 1 cm/sup 2/ in area, have been deposited on fused silica by ablation of the bulk material, YBa/sub 2/Cu/sub 3/O/sub 7-y/, using a pulsed excimer laser. The presence of superconductivity in as-deposited films was established by a novel variation of the technique of microwave absorption, in which the superconducting transition appears as a peak in the temperature dependence of the microwave response. The method is sensitive enough to allow detection of superconductivity in small (approx.0.1 mg) samples and is capable of resolving multiple superconducting phases with slight differences in T/sub c/. As-deposited films have essentially the same value of T/sub c/ (94K) as the bulk material.

  9. Ultraviolet laser deposition of graphene thin films without catalytic layers

    NASA Astrophysics Data System (ADS)

    Sarath Kumar, S. R.; Alshareef, H. N.

    2013-01-01

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  10. A new approach to the deposition of nanostructured biocatalytic films

    NASA Astrophysics Data System (ADS)

    Troitsky, V. I.; Berzina, T. S.; Pastorino, L.; Bernasconi, E.; Nicolini, C.

    2003-06-01

    In the present work, monolayer engineering was used to fabricate biocatalytic nanostructured thin films based on the enzyme penicillin G acylase. The biocatalytic films with enhanced characteristics were produced by the deposition of alternate-layer assemblies with a predetermined structure using a combination of Langmuir-Blodgett and adsorption techniques. The value of enzyme activity and the level of protein detachment were measured in dependence on the variation of film composition and on the sequence of layer alternation. As a result, highly active and stable structures were found, which could be promising candidates for practical applications. The method of modification of the deposition method to provide continuous film formation on large-area supports is discussed.

  11. Substrates suitable for deposition of superconducting thin films

    DOEpatents

    Feenstra, Roeland; Boatner, Lynn A.

    1993-01-01

    A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  12. Nanostructuring and texturing of pulsed laser deposited hydroxyapatite thin films

    NASA Astrophysics Data System (ADS)

    Kim, Hyunbin; Catledge, Shane; Vohra, Yogesh; Camata, Renato; Lacefield, William

    2003-03-01

    Hydroxyapatite (HA) [Ca_10(PO_4)_6(OH)_2] is commonly deposited onto orthopedic and dental metallic implants to speed up bone formation around devices, allowing earlier stabilization in a patient. Pulsed laser deposition (PLD) is a suitable means of placing thin HA films on these implants because of its control over stoichiometry, crystallinity, and nanostructure. These characteristics determine the mechanical properties of the films that must be optimized to improve the performance of load-bearing implants and other devices that undergo bone insertion. We have used PLD to produce nanostructured and preferentially oriented HA films and evaluated their mechanical properties. Pure, highly crystalline HA films on Ti-6Al-4V substrates were obtained using a KrF excimer laser (248nm) with energy density of 4-8 J/cm^2 and deposition temperature of 500-700^rcC. Scanning electron and atomic force microscopies reveal that our careful manipulation of energy density and substrate temperature has led to films made up of HA grains in the nanometer scale. Broadening of x-ray diffraction peaks as a function of deposition temperature suggests it may be possible to control the film nanostructure to a great extent. X-ray diffraction also shows that as the laser energy density is increased in the 4-8 J/cm^2 range, the hexagonal HA films become preferentially oriented along the c-axis perpendicular to the substrate. Texture, nanostructure, and phase make-up all significantly influence the mechanical properties. We will discuss how each of these factors affects hardness and Young's modulus of the HA films as measured by nanoindentation.

  13. Surface properties of metal-nitride and metal-carbide films deposited on Nb for radio-frequency superconductivity

    NASA Astrophysics Data System (ADS)

    Garwin, E. L.; King, F. K.; Kirby, R. E.; Aita, O.

    1987-02-01

    Various effects occur which can prevent attainment of the high Q's and/or the high gradient fields necessary for the operation of radio-frequency (rf) superconducting cavities. One of these effects, multipactor, both causes the cavity to detune during filling due to resonant secondary electron emission at the cavity walls, and lowers the quality factor (Q) by dissipative processes. TiN deposited onto the high-field regions of room-temperature Al cavities has been used at the Stanford Linear Accelerator Center to successfully reduce multipactor in the past. We have therefore studied TiN and its companion materials, NbN, NbC, and TiC, all on Nb substrates under several realistic conditions: (1) as-deposited, (2) exposed to air, and (3) electron bombarded. The studied films (up to 14-nm thickness) were sputter deposited onto sputter-cleaned Nb substrates. Results indicate that all the materials tested gave substantially the same results. The maximum secondary electron yields for as-deposited films were reduced to nearly the preoxidized values after electron bombardment (2-3×1017 electrons cm-2 in the case of NbN and NbC). X-ray photoelectron spectroscopy analysis showed that the oxides (e.g., TiO2 in the case of TiN films) formed during air exposure were slightly reduced (converted to lower oxides) by the electron-beam exposure. Auger electron spectroscopy (AES) showed a slight reduction in the surface O concentration following beam exposure. These results suggest that the chemical nature of top surface layers is responsible for the substantial changes in secondary electron yield observed upon electron-beam exposures and that AES does not reflect this change strongly because of the difficulty in extracting chemical (versus elemental) information from AES. The results indicate that any of these films would be poor choices if simply deposited and exposed to air, but, in fact, the in situ electron bombardment which occurs during cavity operation serves to reduce the

  14. Liquid phase deposition synthesis of hexagonal molybdenum trioxide thin films

    SciTech Connect

    Deki, Shigehito; Beleke, Alexis Bienvenu; Kotani, Yuki; Mizuhata, Minoru

    2009-09-15

    Hexagonal molybdenum trioxide thin films with good crystallinity and high purity have been fabricated by the liquid phase deposition (LPD) technique using molybdic acid (H{sub 2}MoO{sub 4}) dissolved in 2.82% hydrofluoric acid (HF) and H{sub 3}BO{sub 3} as precursors. The crystal was found to belong to a hexagonal hydrate system MoO{sub 3}.nH{sub 2}O (napprox0.56). The unit cell lattice parameters are a=10.651 A, c=3.725 A and V=365.997 A{sup 3}. Scanning electron microscope (SEM) images of the as-deposited samples showed well-shaped hexagonal rods nuclei that grew and where the amount increased with increase in reaction time. X-ray photon electron spectroscopy (XPS) spectra showed a Gaussian shape of the doublet of Mo 3d core level, indicating the presence of Mo{sup 6+} oxidation state in the deposited films. The deposited films exhibited an electrochromic behavior by lithium intercalation and deintercalation, which resulted in coloration and bleaching of the film. Upon dehydration at about 450 deg. C, the hexagonal MoO{sub 3}.nH{sub 2}O was transformed into the thermodynamically stable orthorhombic phase. - Abstract: SEM photograph of typical h-MoO{sub 3}.nH{sub 2}O thin film nuclei obtained after 36 h at 40 deg. C by the LPD method. Display Omitted

  15. Structure and photoluminescence of ultrathin films of SnO2 nanoparticles synthesized by means of pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Gaidi, M.; Hajjaji, A.; Smirani, R.; Bessais, B.; El Khakani, M. A.

    2010-09-01

    Tin oxide (SnO2) ultrathin films were deposited by pulsed laser deposition (PLD) onto SiO2/Si and quartz substrates, at various nominal thicknesses ranging from isolated nanoparticles (NPs) to ˜300 nm-thick films, under an oxygen background pressure of 10 mTorr. The microstructural and surface morphologies of the NP-based SnO2 films were characterized by x-ray diffraction and atomic force microscopy, as a function of their nominal film thickness. The PLD-SnO2 films were found to be composed of NPs (in the 1-6 nm range), whose size increases with the film thickness. The energy band gap, as determined from the absorption edge, was found to shift to higher values with decreasing the film thickness (i.e., decreasing the NPs size). It was found that an annealing at 700 °C under O2 ambient is a prerequisite to get a photoluminescence (PL) emission from the PLD-SnO2 films. The PL of the annealed SnO2 films was found to consist of two broad emission bands, regardless of the SnO2 film thickness. The first band is composed of 3 PL subbands peaking at 3.20, 3.01, and 2.90 eV, while the second one is centered on 2.48 eV. In spite of the observed band-gap widening (as confirmed by theoretical calculation), we show that surface state (e.g., oxygen vacancies) dominate completely the PL emission of SnO2 NPs, which becomes more luminescent as the NPs size decreases while the PL energy remains unchanged. The PL properties of the PLD-SnO2 NPs are discussed in terms of defects and/or oxygen vacancies related transitions.

  16. Nanoscaled tin dioxide films processed from organotin-based hybrid materials: an organometallic route toward metal oxide gas sensors.

    PubMed

    Renard, Laetitia; Babot, Odile; Saadaoui, Hassan; Fuess, Hartmut; Brötz, Joachim; Gurlo, Aleksander; Arveux, Emmanuel; Klein, Andreas; Toupance, Thierry

    2012-11-07

    Nanocrystalline tin dioxide (SnO(2)) ultra-thin films were obtained employing a straightforward solution-based route that involves the calcination of bridged polystannoxane films processed by the sol-gel process from bis(triprop-1-ynylstannyl)alkylene and -arylene precursors. These films have been thoroughly characterized by FTIR, contact angle measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force (AFM) and scanning electron (SEM) microscopies. Annealing at a high temperature gave 30-35 nm thick cassiterite SnO(2) films with a mean crystallite size ranging from 4 to 7 nm depending on the nature of the organic linker in the distannylated compound used as a precursor. In the presence of H(2) and CO gases, these layers led to highly sensitive, reversible and reproducible responses. The sensing properties were discussed in regard to the crystallinity and porosity of the sensing body that can be tuned by the nature of the precursor employed. Organometallic chemistry combined with the sol-gel process therefore offers new possibilities toward metal oxide nanostructures for the reproducible and sensitive detection of combustible and toxic gases.

  17. Dye-Sensitized Nanostructured Crystalline Mesoporous Tin-doped Indium Oxide Films with Tunable Thickness for Photoelectrochemical Applications.

    PubMed

    Hamd, W; Chavarot-Kerlidou, M; Fize, J; Muller, G; Leyris, A; Matheron, M; Courtin, E; Fontecave, M; Sanchez, C; Artero, V; Laberty-Robert, C

    2013-01-01

    A simple route towards nanostructured mesoporous Indium-Tin Oxide (templated nano-ITO) electrodes exhibiting both high conductivities and optimized bicontinuous pore-solid network is reported. The ITO films are first produced as an X-ray-amorphous, high surface area material, by adapting recently established template-directed sol-gel methods using Sn(IV) and In(III) salts. Carefully controlled temperature/atmosphere treatments convert the as-synthesized ITO films into nano-crystalline coatings with the cubic bixbyite structure. Specially, a multi-layered synthesis was successfully undertaken for tuning the film thickness. In order to evaluate the performances of templated nano-ITO as an electrode substrate for photoelectrochemical applications, photoelectrodes were prepared by covalent grafting of a redox-active dye, the complex [Ru(bpy)2(4,4'-(CH2PO3H2)2-bpy)]Cl21 (bpy=bipyridine). Surface coverage was shown to increase with the film thickness, from 0.7 × 10(-9) mol.cm(-2) (one layer, 45 nm) to 3.5 × 10(-9) mol.cm(-2) (ten layers, 470 nm), the latter value being ~ 100 times larger than that for commercially available planar ITO. In the presence of an electron mediator, photocurrents up to 50 μA.cm(-2) have been measured under visible light irradiation, demonstrating the potential of this new templated nano-ITO preparation for the construction of efficient photoelectrochemical devices.

  18. Studies on atomic layer deposition of IRMOF-8 thin films

    SciTech Connect

    Salmi, Leo D. Heikkilä, Mikko J.; Vehkamäki, Marko; Puukilainen, Esa; Ritala, Mikko; Sajavaara, Timo

    2015-01-15

    Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260–320 °C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOF-ERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd){sub 2} (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) as the precursor.

  19. Fabrication of ionic liquid ultrathin film by sequential deposition

    NASA Astrophysics Data System (ADS)

    Morino, Yusuke; Kanai, Yuta; Imanishi, Akihito; Yokota, Yasuyuki; Fukui, Ken-ichi

    2014-01-01

    A simple, mild, reproducible, and controllable nanodeposition method for ionic liquids (ILs) by ejection of IL solution through a high-speed electromagnetic valve (pulse valve) to a substrate under vacuum is proposed (pulse-valve method). Sequential deposition of an IL [1-butyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide (BMIM-TFSI)] on Au(111) substrates from its methanol solution was examined by adopting the pulse-valve method and the deposited IL films were analyzed by X-ray photoelectron spectroscopy (XPS) and tapping-mode atomic force microscopy (AFM). The amount of IL deposited per a pulse was successfully reduced to less than an equivalent thickness of 0.2 nm. The deposited IL was homogeneously distributed over a substrate area of 1 × 1 cm2 substrate area and the deposited amount was reproducible for independent depositions.

  20. P-doped strontium titanate grown using two target pulsed laser deposition for thin film solar cells

    NASA Astrophysics Data System (ADS)

    Man, Hamdi

    Thin-film solar cells made of Mg-doped SrTiO3 p-type absorbers are promising candidates for clean energy generation. This material shows p-type conductivity and also demonstrates reasonable absorption of light. In addition, p-type SrTiO3 can be deposited as thin films so that the cost can be lower than the competing methods. In this work, Mg-doped SrTiO3 (STO) thin-films were synthesized and analyzed in order to observe their potential to be employed as the base semiconductor in photovoltaic applications. Mg-doped STO thin-films were grown by using pulsed laser deposition (PLD) using a frequency quadrupled Yttrium Aluminum Garnet (YAG) laser and with a substrate that was heated by back surface absorption of infrared (IR) laser light. The samples were characterized using X-ray photoelectron spectroscopy (XPS) and it was observed that Mg atoms were doped successfully in the stoichiometry. Reflection high energy electron diffraction (RHEED) spectroscopy proved that the thin films were polycrystalline. Kelvin Probe work function measurements indicated that the work function of the films were 4.167 eV after annealing. UV/Vis Reflection spectroscopy showed that Mg-doped STO thin-films do not reflect significantly except in the ultraviolet region of the spectrum where the reflection percentage increased up to 80%. Self-doped STO thin-films, Indium Tin Oxide (ITO) thin films and stainless steel foil (SSF) were studied in order to observe their characteristics before employing them in Mg-doped STO based solar cells. Self-doped STO thin films were grown using PLD and the results showed that they are capable of serving as the n-type semiconductor in solar cell applications with oxygen vacancies in their structure and low reflectivity. Indium Tin Oxide thin-films grown by PLD system showed low 25-50 ?/square sheet resistance and very low reflection features. Finally, commercially available stainless steel foil substrates were excellent substrates for the inexpensive growth of

  1. Thin NiTi Films Deposited on Graphene Substrates

    NASA Astrophysics Data System (ADS)

    Hahn, S.; Schulze, A.; Böhme, M.; Hahn, T.; Wagner, M. F.-X.

    2017-03-01

    We present experimental results on the deposition of Nickel Titanium (NiTi) films on graphene substrates using a PVD magnetron sputter process. Characterization of the 2-4 micron thick NiTi films by electron microscopy, electron backscatter diffraction, and transmission electron microscopy shows that grain size and orientation of the thin NiTi films strongly depend on the type of combination of graphene and copper layers below. Our experimental findings are supported by density functional theory calculations: a theoretical estimation of the binding energies of different NiTi-graphene interfaces is in line with the experimentally determined microstructural features of the functional NiTi top layer.

  2. Thin NiTi Films Deposited on Graphene Substrates

    NASA Astrophysics Data System (ADS)

    Hahn, S.; Schulze, A.; Böhme, M.; Hahn, T.; Wagner, M. F.-X.

    2016-12-01

    We present experimental results on the deposition of Nickel Titanium (NiTi) films on graphene substrates using a PVD magnetron sputter process. Characterization of the 2-4 micron thick NiTi films by electron microscopy, electron backscatter diffraction, and transmission electron microscopy shows that grain size and orientation of the thin NiTi films strongly depend on the type of combination of graphene and copper layers below. Our experimental findings are supported by density functional theory calculations: a theoretical estimation of the binding energies of different NiTi-graphene interfaces is in line with the experimentally determined microstructural features of the functional NiTi top layer.

  3. Deposition of silver on titania films by electron beam irradiation

    NASA Astrophysics Data System (ADS)

    Gu, Xue-Nan; Ye, Mao; Wu, Xiao-Ling; Wei, Lin; Hu, Yan; Hou, Xing-Gang; Liu, Xiao-Guang; Liu, An-Dong

    2006-06-01

    The deposition of silver on titania films prepared with sol-gel method was performed by electron beam irradiation of silver nitrate solutions. The high efficient Ag/TiO2 films were formed and exhibited enhanced photo-catalytic functions in degradation of methyl orange in aqueous solutions under UV illumination. Metallic Ag nano-clusters were confirmed by XPS, XRD and TEM. The relationship between the silver nitrate concentrations and the photo-catalytic efficiencies of the films was investigated. The optimum concentration of silver nitrate solution was found to be 5 × 10-4 M.

  4. Coaxial carbon plasma gun deposition of amorphous carbon films

    NASA Technical Reports Server (NTRS)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  5. Polyelectrolyte Coacervates Deposited as High Gas Barrier Thin Films.

    PubMed

    Haile, Merid; Sarwar, Owais; Henderson, Robert; Smith, Ryan; Grunlan, Jaime C

    2017-01-01

    Multilayer coatings consisting of oppositely charged polyelectrolytes have proven to be extraordinarily effective oxygen barriers but require many processing steps to fabricate. In an effort to prepare high oxygen barrier thin films more quickly, a polyelectrolyte complex coacervate composed of polyethylenimine and polyacrylic acid is prepared. The coacervate fluid is applied as a thin film using a rod coating process. With humidity and thermal post-treatment, a 2 µm thin film reduces the oxygen transmission rate of 0.127 mm poly(ethylene terephthalate) by two orders of magnitude, rivalling conventional oxygen barrier technologies. These films are fabricated in ambient conditions using low-cost, water-based solutions, providing a tremendous opportunity for single-step deposition of polymeric high barrier thin films.

  6. Formation of ultrasmooth thin silver films by pulsed laser deposition

    SciTech Connect

    Kuznetsov, I. A.; Garaeva, M. Ya.; Mamichev, D. A. Grishchenko, Yu. V.; Zanaveskin, M. L.

    2013-09-15

    Ultrasmooth thin silver films have been formed on a quartz substrate with a buffer yttrium oxide layer by pulsed laser deposition. The dependence of the surface morphology of the film on the gas (N{sub 2}) pressure in the working chamber and laser pulse energy is investigated. It is found that the conditions of film growth are optimal at a gas pressure of 10{sup -2} Torr and lowest pulse energy. The silver films formed under these conditions on a quartz substrate with an initial surface roughness of 0.3 nm had a surface roughness of 0.36 nm. These films can be used as a basis for various optoelectronics and nanoplasmonics elements.

  7. Pulsed laser deposition of compact high adhesion polytetrafluoroethylene thin films

    NASA Astrophysics Data System (ADS)

    Smausz, Tomi; Hopp, Béla; Kresz, Norbert

    2002-08-01

    Polytetrafluoroethylene (PTFE) thin films were prepared from pressed powder pellets via pulsed laser deposition by using ArF (193 nm) excimer laser. The applied laser fluences were in the 1.6-10 J cm-2 range, the substrate temperature was varied between 27°C and 250°C and post-annealing of the films was carried out in air at temperatures between 320°C and 500°C. Films deposited at 250°C substrate temperature were found to be stoichiometric while those prepared at lower temperatures were fluorine deficient. Morphological analyses proved that the film thickness did not significantly depend on the substrate temperature and the post annealing at 500°C resulted in a thickness reduction of approximately 50%. It was demonstrated that the films prepared at 8.2 J cm-2 fluence and annealed at 500°C followed by cooling at 1°C min-1 rate were compact, pinhole-free layers. The adherence of films to the substrates was determined by tensile strength measurements. Tensile strength values up to 2.4 MPa were obtained. These properties are of great significance when PTFE films are fabricated for the purpose of protecting coatings.

  8. Friction and wear of plasma-deposited diamond films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Garscadden, Alan; Barnes, Paul N.; Jackson, Howard E.

    1993-01-01

    Reciprocating sliding friction experiments in humid air and in dry nitrogen and unidirectional sliding friction experiments in ultrahigh vacuum were conducted with a natural diamond pin in contact with microwave-plasma-deposited diamond films. Diamond films with a surface roughness (R rms) ranging from 15 to 160 nm were produced by microwave-plasma-assisted chemical vapor deposition. In humid air and in dry nitrogen, abrasion occurred when the diamond pin made grooves in the surfaces of diamond films, and thus the initial coefficients of friction increased with increasing initial surface roughness. The equilibrium coefficients of friction were independent of the initial surface roughness of the diamond films. In vacuum the friction for diamond films contacting a diamond pin arose primarily from adhesion between the sliding surfaces. In these cases, the initial and equilibrium coefficients of friction were independent of the initial surface roughness of the diamond films. The equilibrium coefficients of friction were 0.02 to 0.04 in humid air and in dry nitrogen, but 1.5 to 1.8 in vacuum. The wear factor of the diamond films depended on the initial surface roughness, regardless of environment; it increased with increasing initial surface roughness. The wear factors were considerably higher in vacuum than in humid air and in dry nitrogen.

  9. Deposition And Characterization Of Ultra Thin Diamond Like Carbon Films

    NASA Astrophysics Data System (ADS)

    Tomcik, B.

    2010-07-01

    Amorphous hydrogenated and/or nitrogenated carbon films, a-C:H/a-C:N, in overall thickness up to 2 nm are materials of choice as a mechanical and corrosion protection layer of the magnetic media in modern hard disk drive disks. In order to obtain high density and void-free films the sputtering technology has been replaced by different plasma and ion beam deposition techniques. Hydrocarbon gas precursors, like C2H2 or CH4 with H2 and N2 as reactive gases are commonly used in Kaufman DC ion and RF plasma beam sources. Optimum incident energy of carbon ions, C+, is up to 100 eV while the typical ion current densities during the film formation are in the mA/cm2 range. Other carbon deposition techniques, like filtered cathodic arc, still suffer from co-deposition of fine nanosized carbon clusters (nano dust) and their improvements are moving toward arc excitation in the kHz and MHz frequency range. Non-destructive film analysis like μ-Raman optical spectroscopy, spectroscopic ellipsometry, FTIR and optical surface analysis are mainly used in the carbon film characterization. Due to extreme low film thicknesses the surface enhanced Raman spectroscopy (SERS) with pre-deposited layer of Au can reduce the signal collection time and minimize photon-induced damage during the spectra acquisition. Standard approach in the μ-Raman film evaluation is the measurement of the position (shift) and area of D and G-peaks under the deconvoluted overall carbon spectrum. Also, a slope of the carbon spectrum in the 1000-2000 cm-1 wavenumber range is used as a measure of the hydrogen intake within a film. Diamond like carbon (DLC) film should possess elasticity and self-healing properties during the occasional crash of the read-write head flying only couple of nanometers above the spinning film. Film corrosion protection capabilities are mostly evaluated by electrochemical tests, potentio-dynamic and linear polarization method and by business environmental method. Corrosion mechanism

  10. Sub-picosecond laser deposition of thin films

    SciTech Connect

    Genin, F; Stuart, B; McLean, W; Chase, L

    2000-11-03

    The 1999 Nobel Prize in Chemistry recognized the importance and growing maturity of the femtosecond time-scale in science and engineering. Understanding the interaction between materials and high energy density light to manufacture and process materials has become a key issue in both programmatic and fundamental research at Lawrence Livermore National Laboratory. We have emphasized in this research the aspects related to producing thin films by ablation of material with intense ultra-short laser pulses. Our effort during FY2000 has been focused on building the foundation of this research using high purity graphite as the initial ablation material. We have deposited diamond-like carbon (DLC) in vacuum, measured ablation rates, and characterized the physical and chemical properties of the films. We successfully completed our first objective to compare the microstructure and materials properties of the films deposited using lasers operated in the femtosecond and nanosecond pulse length regime. The mechanical characterization of the deposits showed improved film-substrate adhesion properties that allowed us to build 200-{micro}m thick layers using 150 fs pulses. Films produced with ns-pulses delaminated as soon as the thickness reached only a couple of microns. The stresses in the films were greatly influenced by the fluence and the duration of the laser pulses. The microstructure and surface morphology of the films did not vary significantly with the processing parameters studied (pulse length and fluence). Finally, we demonstrated that it is possible to significantly increase the deposition rate with shorter pulses at a given fluence. In particular, carbon could be deposited at a rate of 25 {micro}m/hour with this technology. Our goal in FY2001 is to study and model the relationship between the ablation plume characteristics (energy, charge, mass, and momentum) and the film growth behavior in order to influence and optimize the deposition process. We also want to

  11. Germanium films by polymer-assisted deposition

    DOEpatents

    Jia, Quanxi; Burrell, Anthony K.; Bauer, Eve; Ronning, Filip; McCleskey, Thomas Mark; Zou, Guifu

    2013-01-15

    Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

  12. Deposition of zinc films by laser method

    SciTech Connect

    Goncharov, V K; Gusakov, G A; Puzyrev, M V

    2015-04-30

    Conditions of laser irradiation of a zinc target under which large droplets of a laser target material are not formed in the erosion plume are found, and zinc nanofilms with a minimum number of large particles on the surface are produced. The surface structure, thickness and optical characteristics of zinc films are determined as functions of the power density of laser radiation falling on a zinc target. The evaporation threshold for a zinc target irradiated by nanosecond laser pulses is found. (laser technologies)

  13. Effect of Deposition Temperature on the Properties of TIO2 Thin Films Deposited by Mocvd

    NASA Astrophysics Data System (ADS)

    Khalifa, Zaki S.

    2016-02-01

    Crystal structure, microstructure, and optical properties of TiO2 thin films deposited on quartz substrates by metal-organic chemical vapor deposition (MOCVD) in the temperature range from 250∘C to 450∘C have been studied. The crystal structure, thickness, microstructure, and optical properties have been carried out using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), and UV-visible transmittance spectroscopy, respectively. XRD patterns show that the obtained films are pure anatase. Simultaneously, the crystal size calculated using XRD peaks, and the grain size measured by AFM decrease with the increase in deposition temperature. Moreover, the texture of the films change and roughness decrease with the increase in deposition temperature. The spectrophotometric transmittance spectra have been used to calculate the refractive index, extinction coefficient, dielectric constant, optical energy gap, and porosity of the deposited films. While the refractive index and dielectric constant decrease with the increase of deposition temperature, the porosity shows the opposite.

  14. 12% efficient CdTe/CdS thin film solar cells deposited by low-temperature close space sublimation

    NASA Astrophysics Data System (ADS)

    Schaffner, Judith; Motzko, Markus; Tueschen, Alexander; Swirschuk, Andreas; Schimper, Hermann-Josef; Klein, Andreas; Modes, Thomas; Zywitzki, Olaf; Jaegermann, Wolfram

    2011-09-01

    We report 12% efficient CdS/CdTe thin film solar cells prepared by low temperature close space sublimation (CSS). Both semiconductor films, CdS and CdTe, were deposited by high vacuum CSS in superstrate configuration on glass substrates with fluorine doped tin oxide (FTO) front contact. The CdTe deposition was carried out at a substrate temperature (Tsub) of ≤340 ∘C, which is much lower than that used in conventional processes (>500 ∘C). The CdTe films were treated with the usual CdCl2 activation process. Different optimal annealing times and temperatures were found for low-temperature cells (Tsub≤ 340 ∘C) compared to high-temperature cells (Tsub = 520 ∘C). The influence of the activation step on the morphology of high-temperature and low-temperature CdTe is determined by XRD, AFM, SEM top views, and SEM cross-sections. Grain growth, strong recrystallization, and a reduction of planar defects during the activation step are observed, especially for low-temperature CdTe. Further, the influence of CdS deposition parameters on the solar cell performance is investigated by using three different sets of parameters with different deposition rates and substrate temperatures for the CdS preparation. Efficiencies about 10.9% with a copper-free back contact and 12.0% with a copper-containing back contact were achieved using the low temperature CdTe process.

  15. Electrochemical Deposition Of Conductive Copolymers

    NASA Technical Reports Server (NTRS)

    Nagasubramanian, Ganesan; Distefano, Salvador; Liang, Ranty H.

    1991-01-01

    Experiments show electrically conductive films are deposited on glassy carbon or indium tin oxide substrates by electrochemical polymerization of N-{(3-trimethoxy silyl) propyl} pyrrole or copolymerization with pyrrole. Copolymers of monomer I and pyrrole exhibit desired electrical conductivity as well as desired adhesion and other mechanical properties. When fully developed, new copolymerization process useful in making surface films of selectable conductivity.

  16. Fundamental Mechanisms of Roughening and Smoothing During Thin Film Deposition

    SciTech Connect

    Headrick, Randall

    2016-03-18

    In this research program, we have explored the fundamental limits for thin film deposition in both crystalline and amorphous (i.e. non-crystalline) materials systems. For vacuum-based physical deposition processes such as sputter deposition, the background gas pressure of the inert gas (usually argon) used as the process gas has been found to be a key variable. Both a roughness transition and stress transition as a function of pressure have been linked to a common mechanism involving collisions of energetic particles from the deposition source with the process inert gas. As energetic particles collide with gas molecules in the deposition process they lose their energy rapidly if the pressure (and background gas density) is above a critical value. Both roughness and stress limit important properties of thin films for applications. In the area of epitaxial growth we have also discovered a related effect; there is a critical pressure below which highly crystalline layers grow in a layer-by-layer mode. This effect is also though to be due to energetic particle thermalization and scattering. Several other important effects such as the observation of coalescence dominated growth has been observed. This mode can be likened to the behavior of two-dimensional water droplets on the hood of a car during a rain storm; as the droplets grow and touch each other they tend to coalesce rapidly into new larger circular puddles, and this process proceeds exponentially as larger puddles overtake smaller ones and also merge with other large puddles. This discovery will enable more accurate simulations and modeling of epitaxial growth processes. We have also observed that epitaxial films undergo a roughening transition as a function of thickness, which is attributed to strain induced by the crystalline lattice mismatch with the substrate crystal. In addition, we have studied another physical deposition process called pulsed laser deposition. It differs from sputter deposition due to the

  17. Influence of the deposition parameters on the properties of SnS2 films prepared by PECVD method combined with solid sources

    NASA Astrophysics Data System (ADS)

    Wang, Shengming; Wang, Shicai; Chen, Junfeng; Liu, Pei; Chen, Ming; Xiong, Hao; Guo, Fu; Liu, Minghai

    2014-09-01

    Hexagonal tin disulfide (SnS2) films were deposited by plasma-enhanced chemical vapor deposition (PECVD) method combined with solid sources, in which SnCl4·5H2O and Na2S2O3 were used as the tin and sulfur sources, respectively. Nano-sheet and nano-flower structure SnS2 films were obtained under different experimental conditions. The nano-sheet SnS2 films were built by irregular nanoplates with 400 ± 100 nm in length and 10 nm in thickness. And the nano-flower SnS2 films consisted of uniform nano-flowers in size with the diameter being around 1 μm. The influence of different substrates, the annealing treatment and the substrate temperature on the crystal structure, surface morphology, chemical composition, and optical properties of the SnS2 films were systemically discussed. The results show that the crystal structure and surface morphology have some differences in the films deposited on different substrates. After annealing treatment, the crystallinity of the SnS2 films increases, and at the same time, the internal stress reduces. However, there is no change in the stress direction. The surface morphology of the films turns into nano-flower from nano-sheet when the substrate temperature increases. The corresponding optical band gaps of the films are 2.68, 2.86, and 2.95 eV, which all show significant blue shift mainly due to the quantum confinement effect.

  18. Development of tin oxide coatings for use as electrodes in mercuric iodide photodetector applications

    SciTech Connect

    Hays, A.K.; Hughes, R.C.

    1988-01-01

    We determine plasma processing parameters for depositing thin, conductive, tin oxide films on HgI/sub 2/ substrates at relatively low temperatures. In addition, we report relative quantum efficiency measurements as a function of wavelength for HgI/sub 2/ photodetectors possessing plasma-deposited electrodes. 16 refs., 5 figs.

  19. Biomimetic lithography and deposition kinetics of iron oxyhydroxide thin films

    SciTech Connect

    Rieke, P.C.; Wood, L.L.; Marsh, B.M.; Fryxell, G.E.; Engelhard, M.H.; Baer, D.R.; Tarasevich, B.J. |; John, C.M.

    1993-12-01

    Heterogeneous nucleation and crystal growth on functionalized organic substrates is a critical step in biological hard tissue formation. Self assembled monolayers can be derivatized with various organic functional groups to mimic the ``nucleation proteins`` for induction of mineral growth. Studies of nucleation and growth on SAMs can provide a better understanding of biomineralization and can also form the basis of a superior thin film deposition process. We demonstrate that micron-scale, electron and ion beam, lithographic techniques can be used to pattern SAMs with functional organic groups that either inhibit or promote mineral deposition. Patterned films of iron oxyhydroxide were deposited on the areas patterned with nucleation sites. Studies of the deposition kinetic of these films show that indeed the surface induces heterogeneous nucleation and that film formation does not occur via absorption of polymers or colloidal material formed homogeneously in solution. The nucleus interfacial free energy was calculated to be 24 mJ/m2 on a SAM surface composed entirely of sulfonate groups.

  20. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  1. Nonhydrolytic alkyl halide elimination reaction and its application in solution-processed zinc tin oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Yoo, Young Bum; Park, Jee Ho; Baik, Hong Koo; Song, Kie Moon

    2014-04-01

    In this study, we fabricated zinc tin oxide (ZTO) thin-film transistors (TFTs) using a sol-gel solution at an annealing temperature of 350 °C. We used a precursor combination of alkoxide and metal chloride to utilize the alkyl halide elimination reaction. Compared with transistor using chloride-only precursors, the resulting ZTO transistor showed improved performance. Solution-processed ZTO-TFTs prepared at 350 °C using an alkoxide-chloride precursor combination showed a field-effect mobility of 4.17 cm2 V-1 s-1, whereas that prepared using a chloride-only solution showed a mobility of 0.98 cm2 V-1 s-1. Thermal analysis showed that the alkoxide-chloride precursor was decomposed well at a given annealing temperature and formed oxide with few residual impurities compared with chloride-only precursors.

  2. Subgap states in p-channel tin monoxide thin-film transistors from temperature-dependent field-effect characteristics

    NASA Astrophysics Data System (ADS)

    Jeong, Chan-Yong; Lee, Daeun; Han, Young-Joon; Choi, Yong-Jin; Kwon, Hyuck-In

    2015-08-01

    This paper experimentally investigates the subgap density of states (DOS) in p-type tin monoxide (SnO) thin-film transistors (TFTs) for the first time by using temperature-dependent field-effect measurements. As the temperature increases, the turn-on voltage moves in the positive direction, and the off-current and subthreshold slope continuously increase. We found that the conductivity of the SnO TFT obeys the Meyer-Neldel (MN) rule with a characteristic MN parameter of 28.6 eV-1 in the subthreshold region, from which we successfully extracted the subgap DOS by combing the field-effect method and the MN relation. The extracted subgap DOS from fabricated p-type SnO TFTs are exponentially distributed in energy, and exhibit around two orders of magnitude higher values compared to those of the n-type amorphous indium-gallium-zinc oxide TFTs.

  3. Duality and genetic significance of REE speciation in tourmaline from tin deposits of the Far East

    NASA Astrophysics Data System (ADS)

    Gorelikova, N. V.; Balashov, F. V.; Bychkova, Ya. V.; Minervina, E. A.; Korostelev, P. G.; Magazina, O. L.; Bortnikov, N. S.

    2016-04-01

    The distribution of REEs and some minor elements in tourmalines of different associations and deposits of the Russian Far East is studied by the methods of ICP-MS, ICP-MS with laser ablation and scanning electron microscopy. The duality of REE speciation in tourmaline is established: in high-temperature varieties, most REEs (mainly HREEs) are incorporated in rare minerals (monazite, xenotime, zircon, and F-Ce-Y carbonate), whereas hydrothermal ores are characterized by isomorphic incorporation of LREEs in the mineral structure, as well as by a fine admixture of zircon at the expense of detrital clasts in flyschoid rocks with the zones of tourmalinization.

  4. Electron cyclotron resonance deposition of diamond-like films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Pool, F. S.

    1990-01-01

    Electron cyclotron resonance (ECR) microwave plasma CVD has been developed at low pressures (0.0001 - 0.01 torr) and at ambient and high substrate temperatures (up to 750 C), to achieve large-area (greater than 4 in. diameter) depositions of diamondlike amorphous carbon (a - C:H) films. The application of a RF bias to the substrate stage, which induces a negative self-bias voltage, is found to play a critical role in determining carbon bonding configurations and in modifying the film morphology. There are two distinct types of ECR-deposited diamondlike films. One type of diamondlike film exhibits a Raman spectrum consisting of broad and overlapping, graphitic D (1360/cm, line width = 280/cm) and G (1590/cm, line width 140/cm) lines, and the other type has a broad Raman peak centered at appoximately 1500/cm. Examination of plasma species by optical emission spectroscopy shows no correlation between the CH-asterisk emission intensity and the deposition rate of diamondklike films.

  5. Vacuum deposited polymer/metal films for optical applications

    NASA Astrophysics Data System (ADS)

    Affinito, J. D.; Martin, P. M.; Gross, M. E.; Coronado, C.; Greenwell, E.

    1995-04-01

    Vacuum deposited Polymer/Silver/Polymer reflectors and Tantalum/Polymer/Aluminum Fabry-Perot interference filters were fabricated in a vacuun web coating operation on polyester substrates with a new, high speed deposition process. Reflectivities were measured in the wavelength range from 0.3 to 0.8(mu)m. This new vacuum processing technique has been shown to be capable of deposition line speeds in excess of 500 linear meters/minute. Central to this technique is a new position process for the high rate deposition of polymer films. This polymer process involves the flash evaporation of an acrylic monomer onto a moving substrate. The monomer is subsequently cured by an electron beam or ultraviolet light. This high speed polymer film deposition process has been named the PML process -- for Polymer Multi-Layer. Also, vacuum deposited, index matched, polymer/CaF(sub 2) composites were fabricated from monomer slurries that were subsequently cured with LTV light. This second technique is called the Liquid Multi-Layer (or LML) process. Each of these polymer processes is compatible with each other and with conventional vacuum deposition processes such as sputtering or evaporation.

  6. Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer

    NASA Astrophysics Data System (ADS)

    Lee, Juhyun; Lee, Jeongsu; Ham, Giyul; Shin, Seokyoon; Park, Joohyun; Choi, Hyeongsu; Lee, Seungjin; Kim, Juyoung; Sul, Onejae; Lee, Seungbeck; Jeon, Hyeongtag

    2017-02-01

    We report the effect of zirconium oxide (ZrO2) layers on the electrical characteristics of multilayered tin disulfide (SnS2) formed by atomic layer deposition (ALD) at low temperatures. SnS2 is a two-dimensional (2D) layered material which exhibits a promising electrical characteristics as a channel material for field-effect transistors (FETs) because of its high mobility, good on/off ratio and low temperature processability. In order to apply these 2D materials to large-scale and flexible electronics, it is essential to develop processes that are compatible with current electronic device manufacturing technology which should be conducted at low temperatures. Here, we deposited a crystalline SnS2 at 150 °C using ALD, and we then annealed at 300 °C. X-ray diffraction (XRD) and Raman spectroscopy measurements before and after the annealing showed that SnS2 had a hexagonal (001) peak at 14.9° and A1g mode at 313 cm-1. The annealed SnS2 exhibited clearly a layered structure confirmed by the high resolution transmission electron microscope (HRTEM) images. Back-gate FETs with SnS2 channel sandwiched by top and bottom ZrO2 on p++Si/SiO2 substrate were suggested to improve electrical characteristics. We used a bottom ZrO2 layer to increase adhesion between the channel and the substrate and a top ZrO2 layer to improve contact property, passivate surface, and protect from process-induced damages to the channel. ZTZ (ZrO2/SnS2/ZrO2) FETs showed improved electrical characteristics with an on/off ratio of from 0.39×103 to 6.39×103 and a mobility of from 0.0076 cm2/Vs to 0.06 cm2/Vs.

  7. Control of Thin Liquid Film Morphology During Solvent-Assisted Film Deposition

    SciTech Connect

    Evmenenko, G.; Stripe, B; Dutta, P

    2010-01-01

    Liquid films of different silicate esters were deposited from volatile solvents on hydroxylated and hydrogen-passivated silicon surfaces. We show that adsorption of silicate ester molecules and the resulting structural morphology of the liquid films not only are determined by attractive van der Waals forces with contributions from electrostatic interactions between the silicone ester moieties and oxide surface sites but also can be tuned by modifying the substrate surface or by changing the liquid-solvent interactions. Our results also show the importance of the conformational properties of liquid molecules and their rearrangements at the liquid/solid interface for controlled solvent-assisted film deposition.

  8. YBCO thin film evaporation on as-deposited silver film on MgO

    NASA Astrophysics Data System (ADS)

    Azoulay, J.

    1999-11-01

    YBa 2Cu 3O 7- δ (YBCO) thin film was evaporated on as-deposited Ag buffer layer on MgO substrate. A simple, inexpensive vacuum system equipped with one resistively heated source was used. The subsequent heat treatment was carried out under low oxygen partial pressure at a relatively low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using DC four-probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). It is shown that YBCO thin film can grow on as-deposited thin silver layer on MgO substrate.

  9. Thermodynamics of deposition flux-dependent intrinsic film stress

    PubMed Central

    Saedi, Amirmehdi; Rost, Marcel J.

    2016-01-01

    Vapour deposition on polycrystalline films can lead to extremely high levels of compressive stress, exceeding even the yield strength of the films. A significant part of this stress has a reversible nature: it disappears when the deposition is stopped and re-emerges on resumption. Although the debate on the underlying mechanism still continues, insertion of atoms into grain boundaries seems to be the most likely one. However, the required driving force has not been identified. To address the problem we analyse, here, the entire film system using thermodynamic arguments. We find that the observed, tremendous stress levels can be explained by the flux-induced entropic effects in the extremely dilute adatom gas on the surface. Our analysis justifies any adatom incorporation model, as it delivers the underlying thermodynamic driving force. Counterintuitively, we also show that the stress levels decrease, if the barrier(s) for adatoms to reach the grain boundaries are decreased. PMID:26888311

  10. Analysis of Indium Tin Oxide Film Using Argon Fluroide (ArF) Laser-Excited Atomic Fluorescence of Ablated Plumes.

    PubMed

    Ho, Sut Kam; Garcia, Dario Machado

    2017-01-01

    A two-pulse laser-excited atomic fluorescence (LEAF) technique at 193 nm wavelength was applied to the analysis of indium tin oxide (ITO) layer on polyethylene terephthalate (PET) film. Fluorescence emissions from analytes were induced from plumes generated by first laser pulse. Using this approach, non-selective LEAF can be accomplished for simultaneous multi-element analysis and it overcomes the handicap of strict requirement for laser excitation wavelength. In this study, experimental conditions including laser fluences, times for gating and time delay between pulses were optimized to reveal high sensitivity with minimal sample destruction and penetration. With weak laser fluences of 100 and 125 mJ/cm(2) for 355 and 193 nm pulses, detection limits were estimated to be 0.10% and 0.43% for Sn and In, respectively. In addition, the relation between fluorescence emissions and number of laser shots was investigated; reproducible results were obtained for Sn and In. It shows the feasibility of depth profiling by this technique. Morphologies of samples were characterized at various laser fluences and number of shots to examine the accurate penetration. Images of craters were also investigated using scanning electron microscopy (SEM). The results demonstrate the imperceptible destructiveness of film after laser shot. With such weak laser fluences and minimal destructiveness, this LEAF technique is suitable for thin-film analysis.

  11. Chemically Deposited Thin-Film Solar Cell Materials

    NASA Technical Reports Server (NTRS)

    Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

    2005-01-01

    We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

  12. Mocvd of Tin Oxide for Gas Sensors.

    NASA Astrophysics Data System (ADS)

    Weglicki, Peter Stanislaw

    1990-01-01

    Available from UMI in association with The British Library. Requires signed TDF. Thin films of a wide variety of materials can be produced using an assortment of physical and chemical techniques. Such techniques are reviewed and compared, with particular reference to the deposition of tin oxide films. In the present study, MOCVD (Metal organic chemical vapour deposition) was used to grow thin films of tin oxide from dibutyltin diacetate precursor on a variety of substrates. A series of reactor prototypes were developed in accordance with specific requirements of reproducibility and process control. The evolution of the designs leading to the final working system is detailed. The theory of MOCVD is given with particular reference to the reactor used in this project. The effects of various deposition parameters on tin oxide film growth rates were investigated, and the results are discussed with reference to the deposition kinetics in the system. Films were characterised by optical interferometry, optical and electron microscopy, X-ray diffraction, Rutherford backscattering and electrical measurements. The films were generally uniform, conducting and polycrystalline, and were comprised of very small grains, resulting in a high density. A specific application of metal oxide materials is in solid state gas sensors, which are available in various forms and operate according to different mechanisms. These are compared and a detailed account is given on the theory of operation of surface conductivity modulated devices. The application of such devices based on tin oxide in thin film form was investigated in the present work. The prepared sensor samples were comprised of very small grains, resulting in a high density. The observation that preferred (310) orientation occured in thicker films, can be attributed to dendritic growth. The sensors generally showed response to numerous reducing gas ambients, although there was evidence of a degree of selectivity against methane

  13. Dual ion beam deposition of carbon films with diamondlike properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  14. In situ measurement of conductivity during nanocomposite film deposition

    NASA Astrophysics Data System (ADS)

    Blattmann, Christoph O.; Pratsinis, Sotiris E.

    2016-05-01

    Flexible and electrically conductive nanocomposite films are essential for small, portable and even implantable electronic devices. Typically, such film synthesis and conductivity measurement are carried out sequentially. As a result, optimization of filler loading and size/morphology characteristics with respect to film conductivity is rather tedious and costly. Here, freshly-made Ag nanoparticles (nanosilver) are made by scalable flame aerosol technology and directly deposited onto polymeric (polystyrene and poly(methyl methacrylate)) films during which the resistance of the resulting nanocomposite is measured in situ. The formation and gas-phase growth of such flame-made nanosilver, just before incorporation onto the polymer film, is measured by thermophoretic sampling and microscopy. Monitoring the nanocomposite resistance in situ reveals the onset of conductive network formation by the deposited nanosilver growth and sinternecking. The in situ measurement is much faster and more accurate than conventional ex situ four-point resistance measurements since an electrically percolating network is detected upon its formation by the in situ technique. Nevertheless, general resistance trends with respect to filler loading and host polymer composition are consistent for both in situ and ex situ measurements. The time lag for the onset of a conductive network (i.e., percolation) depends linearly on the glass transition temperature (Tg) of the host polymer. This is attributed to the increased nanoparticle-polymer interaction with decreasing Tg. Proper selection of the host polymer in combination with in situ resistance monitoring therefore enable the optimal preparation of conductive nanocomposite films.

  15. Area selective molecular layer deposition of polyurea films.

    PubMed

    Prasittichai, Chaiya; Zhou, Han; Bent, Stacey F

    2013-12-26

    Patterned organic thin films with submicrometer features are of great importance in applications such as nanoelectronics and optoelectronics. We present here a new approach for creating patterned organic films using area selective molecular layer deposition (MLD). MLD is a technique that allows for conformal deposition of nanoscale organic thin films with exceptional control over vertical thickness and composition. By expanding the technique to allow for area selective MLD, lateral patterning of the film can be achieved. In this work, polyurea thin films were deposited by alternating pulses of 1,4-phenylenediisocyanate (PDIC) and ethylenediamine (ED) in a layer-by-layer fashion with a linear growth rate of 5.3 Å/cycle. Studies were carried out to determine whether self-assembled monolayer (SAM) formed from octadecyltrichlorosilane (ODTS) could block MLD on silicon substrates. Results show that the MLD process is impeded by the SAM. To test lateral patterning in MLD, SAMs were patterned onto silicon substrates using two different approaches. In one approach, SiO2-coated Si(100) substrates were patterned with an ODTS SAM by soft lithography in a well-controlled environment. In the second approach, patterned ODTS SAM was formed on H-Si/SiO2 patterned wafers by employing the chemically selective adsorption of ODTS on SiO2 over H-Si. Auger electron spectroscopy results revealed that the polyurea film is deposited predominantly on the ODTS-free regions of both patterned substrates, indicating sufficient blocking of MLD by the ODTS SAM layer to replicate the pattern. The method we describe here offers a novel approach for fabricating high quality, three-dimensional organic structures.

  16. Luminescent sulfides and solution-deposited oxide thin films

    NASA Astrophysics Data System (ADS)

    Anderson, Jeremy T.

    Solid state luminescent sulfides are prepared as powders in order to elucidate the relationship between structure and light emission. While the sulfides studied in this dissertation are known phosphors, materials are investigated in a variety of new ways. Elementary properties and structures of MgS are reviewed, and preparation of MgS is described with sufficient detail that it may be reproduced in laboratories worldwide. Luminescence of MgS:Eu is evaluated, primarily by interpretation of published work. Solid pellets of MgS:Eu are created for the purpose of depositing thin-film layers by physical vapor deposition, and incorporating the phosphor layer within ACTFEL structures. Fabricated devices are found to exhibit bright ACTFEL luminescence--the brightest known for MgS. Similarly, MgS films are doped with a variety of lanthanide atoms to investigate the hot-electron distribution in MgS layers during device operation. The system BaGa2S4--SrGa 2S4 is evaluated for mutual solid phase solubility. Addition of Eu2+ causes each of these phases to photoluminescence. The emission energies (and therefore colors) are adjusted according to composition. Thin-film oxides are deposited from solution sources. Solution-deposited ZnO serves as the semiconductor layer in transparent thin-film transistor devices. A new class of dielectric material is also developed by solution methods. HafSOx and ZircSOx films, and derivative compositions, are evaluated in simple capacitor structures and demonstrated in functioning transistor devices. High-resolution nanolaminate structures are also constructed from this class of materials. From the knowledge and experience of developing oxide thin-films, more general chemical strategies are expressed.

  17. Deposition of device quality low H content, amorphous silicon films

    DOEpatents

    Mahan, Archie H.; Carapella, Jeffrey C.; Gallagher, Alan C.

    1995-01-01

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.

  18. X-ray reflectivity measurements of vacuum deposited thin films

    SciTech Connect

    Chason, M. ); Chason, E. )

    1992-01-01

    X-ray reflectivity using energy dispersive X-ray detection, a nondestructive probe of surface roughness over the region of [approximately] 1--50 [Angstrom], has been used to investigate the characteristicsof vacuum deposited thin films. With a surface roughness sensitivity better than 1 [Angstrom] X-ray reflectivity is sensitive to interfaces between different materials for sample thicknesses up to approximately2000 [Angstrom] (depending on material density). We have investigated discrete Cr/Al deposits on quartz substrates and determined the surface roughness at the interfaces. We have also monitored the evolution ofthe Cr/Al interface following annealing. The experimental data is presented and discussed. The use of the technique for studying thin film deposits is addressed.

  19. X-ray reflectivity measurements of vacuum deposited thin films

    SciTech Connect

    Chason, M.; Chason, E.

    1992-12-31

    X-ray reflectivity using energy dispersive X-ray detection, a nondestructive probe of surface roughness over the region of {approximately} 1--50 {Angstrom}, has been used to investigate the characteristicsof vacuum deposited thin films. With a surface roughness sensitivity better than 1 {Angstrom} X-ray reflectivity is sensitive to interfaces between different materials for sample thicknesses up to approximately2000 {Angstrom} (depending on material density). We have investigated discrete Cr/Al deposits on quartz substrates and determined the surface roughness at the interfaces. We have also monitored the evolution ofthe Cr/Al interface following annealing. The experimental data is presented and discussed. The use of the technique for studying thin film deposits is addressed.

  20. Thin Film Nanomorphology Tailored by Physical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Suzuki, Motofumi

    Shadowing growth by glancing angle deposition (GLAD) has been providing self-assembled nanostructures over much larger area for much lower costs since much earlier than the recent advanced top down processes do. In these two decades, significant progress has been made in the development of the well-controlled 3D nanomorphologies such as zigzag and helix. Much effort for theoretical and numerical understanding of the growth mechanism has been also paid in order to improve the morphology. Many researches in academia have been investigating useful properties of nanocolumnar thin films in their laboratory. On the other hand, most companies seem hesitate to introduce GLAD technique into the factory due to the prejudice that the obliquely deposited thin films are not durable and reproducible. In this article, we discuss the progress in glancing angle deposition technology for the practical applications.

  1. Deposition of device quality low H content, amorphous silicon films

    DOEpatents

    Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

    1995-03-14

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

  2. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    PubMed

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  3. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique

    SciTech Connect

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong

    2011-03-30

    Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.

  4. Effects of deposition rate and thickness on the properties of YBCO films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Shi, D. Q.; Ko, R. K.; Song, K. J.; Chung, J. K.; Choi, S. J.; Park, Y. M.; Shin, K. C.; Yoo, S. I.; Park, C.

    2004-02-01

    YBCO films with various thicknesses from 100 nm to 1.6 µm were deposited on single crystal SrTiO3 substrates by pulsed laser deposition (PLD). The effects of thickness and deposition rate—by means of controlling the pulsed laser frequency—on the critical current density (Jc) were studied. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to examine the orientation, crystallization and surface quality. The amount of a-axis YBCO component evaluated from the ratio of XRD chi-scan intensities of the a-axis and c-axis for the YBCO (102) plane increased as the YBCO film became thicker. SEM was used to analyse the surface of YBCO film, and it was shown that the surface of YBCO film became rougher with increasing thickness. There were many large singular outgrowths and networks of outgrowths on the surface of the YBCO films with thickness greater than 0.4 µm. The increased amount of a-axis YBCO component and the coarse microstructure of the thick YBCO film caused degradation of Jc with increasing thickness.

  5. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    PubMed

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  6. Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures

    SciTech Connect

    Fakhri, M.; Goerrn, P.; Riedl, T.; Weimann, T.; Hinze, P.

    2011-09-19

    Transparent zinc-tin-oxide (ZTO) thin film transistors (TFTs) have been prepared by DC magnetron sputtering. Compared to reference devices with a channel deposited at room temperature and subsequently annealing at 400 deg. C, a substantially enhanced stability against bias stress is evidenced for devices with in-situ substrate heating during deposition (400 deg. C). A reduced density of sub-gap defect states in TFT channels prepared with in-situ substrate heating is found. Concomitantly, a reduced sensitivity to the adsorption of ambient gases is evidenced for the in-situ heated devices. This finding is of particular importance for an application as driver electronics for organic light emitting diode displays.

  7. Smoothing of mirror substrates by thin-film deposition

    SciTech Connect

    Baker, S; Parra, E; Spiller, E; Tarrio, C

    1999-08-03

    Superpolished optical flats with high spatial frequency roughness below 0.1 nm have been commercially available for years. However, it is much more difficult to obtain figured optics of similar quality. We have obtained and tested the finish of figured optics from different vendors by atomic force microscopy and optical profilometry and have investigated how the substrate quality can be improved by the deposition of thin films. We have determined the growth parameters of several thin-film structures. From these parameters we can determine how the surface topography of a coated mirror differs from that of the substrate, select the best thin-film structure, and predict the possible improvement. Keywords: Smoothing films, multilayer coatings, finish of mirror substrates

  8. High conductivity transparent carbon nanotube films deposited from superacid.

    PubMed

    Hecht, David S; Heintz, Amy M; Lee, Roland; Hu, Liangbing; Moore, Bryon; Cucksey, Chad; Risser, Steven

    2011-02-18

    Carbon nanotubes (CNTs) were deposited from a chlorosulfonic superacid solution onto PET substrates by a filtration/transfer method. The sheet resistance and transmission (at 550 nm) of the films were 60 Ω/sq and 90.9% respectively, which corresponds to a DC conductivity of 12,825 S cm(-1) and a DC/optical conductivity ratio of 64.1. This is the highest DC conductivity reported for CNT thin films to date, and attributed to both the high quality of the CNT material and the exfoliation/doping by the superacid. This work demonstrates that CNT transparent films have not reached the conductivity limit; continued improvements will enable these films to be used as the transparent electrode for applications in solid state lighting, LCD displays, touch panels, and photovoltaics.

  9. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, III, Jerome J.; Halpern, Bret L.

    1993-01-01

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  10. Study on platinum thermal sensitive films deposited using magnetic sputtering

    NASA Astrophysics Data System (ADS)

    Cai, Changlong; Liu, Weiguo; Zhou, Shun; Zhai, Yujia

    2012-10-01

    The infrared imaging detecting technology has broad application prospects in military and civilian fields. The bolometer is one of mainstream uncooled infrared detectors, because it has many advantages, for example, light weight, wide dynamic range, excellent response linearity, and without refrigeration and chopper which leads to low manufacturing cost. In many infrared detecting sensitive materials, Pt films have wider linear range, lower noise, and compatibility with silicon integrated process excellently. In this paper, Pt sensitive films were deposited by means of magnetron sputtering, the preparation process of Pt films for the infrared imaging detecting unit was studied, the temperature coefficient of resistance (TCR) of Pt films can be improved by vacuum annealing to achieve 1.737 ‰/K. The micro-structure and micro-fabrication process of infrared imaging detecting unit based on Pt films were designed, and the heating character of infrared imaging detecting unit based on Pt films was measured using I-V character testing system. Testing results shown that, the properties of fabricated infrared thermal imaging detecting unit based on Pt films were better, Its TCR is about 1.64 ‰/K, and its thermal response is better.

  11. Molecular layer deposition of alucone films using trimethylaluminum and hydroquinone

    SciTech Connect

    Choudhury, Devika; Sarkar, Shaibal K.; Mahuli, Neha

    2015-01-01

    A hybrid organic–inorganic polymer film grown by molecular layer deposition (MLD) is demonstrated here. Sequential exposures of trimethylaluminum [Al(CH{sub 3}){sub 3}] and hydroquinone [C{sub 6}H{sub 4}(OH){sub 2}] are used to deposit the polymeric films, which is a representative of a class of aluminum oxide polymers known as “alucones.” In-situ quartz crystal microbalance (QCM) studies are employed to determine the growth characteristics. An average growth rate of 4.1 Å per cycle at 150 °C is obtained by QCM and subsequently verified with x-ray reflectivity measurements. Surface chemistry during each MLD-half cycle is studied in depth by in-situ Fourier transform infrared (FTIR) vibration spectroscopy. Self limiting nature of the reaction is confirmed from both QCM and FTIR measurements. The conformal nature of the deposit, typical for atomic layer deposition and MLD, is verified with transmission electron microscopy imaging. Secondary ion mass spectroscopy measurements confirm the uniform elemental distribution along the depth of the films.

  12. Polymer-assisted deposition of metal-oxide films.

    PubMed

    Jia, Q X; McCleskey, T M; Burrell, A K; Lin, Y; Collis, G E; Wang, H; Li, A D Q; Foltyn, S R

    2004-08-01

    Metal oxides are emerging as important materials for their versatile properties such as high-temperature superconductivity, ferroelectricity, ferromagnetism, piezoelectricity and semiconductivity. Metal-oxide films are conventionally grown by physical and chemical vapour deposition. However, the high cost of necessary equipment and restriction of coatings on a relatively small area have limited their potential applications. Chemical-solution depositions such as sol-gel are more cost-effective, but many metal oxides cannot be deposited and the control of stoichiometry is not always possible owing to differences in chemical reactivity among the metals. Here we report a novel process to grow metal-oxide films in large areas at low cost using polymer-assisted deposition (PAD), where the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of uniform metal-organic films. The latter feature makes it possible to grow simple and complex crack-free epitaxial metal-oxides.

  13. Electrical and optical properties of near UV transparent conductive ITO/Ga2O3 multilayer films deposited by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kim, Jae-Kwan; Lee, Ji-Myon

    2016-10-01

    Ga2O3/ITO co-sputtering and alternating multilayer films were deposited on the Corning glass substrates by radio frequency magnetron technique at room temperature. We investigated the effects of the thickness and period of Ga2O3 interlayer on the microstructure. We also elucidated the electrical and the optical properties of Ga2O3/indium tin oxide (ITO) multilayer films and co-sputtered the Ga2O3/ITO mixed films (co-IGTO). One-period Ga2O3/ITO films, which exhibited the lowest sheet resistance of 58.6 Ω/sq and the highest transmittance of 80.94% at a wavelength of 380 nm, were deposited on the Corning glass. The sheet resistance of co-sputtered Ga2O3/ITO film was rapidly increased to 189.2 Ω/sq., while the Hall mobility of the same film was rapidly decreased to 12.53 cm2/(V s). Although the carrier concentration of the multilayer films was lower than that of the ITO single layer, the figure of merit of the Ga2O3/ITO one-period alternating multilayer films was higher than those of single ITO and co-IGTO films.

  14. Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

    SciTech Connect

    Hennessy, John Jewell, April D.; Balasubramanian, Kunjithapatham; Nikzad, Shouleh

    2016-01-15

    Aluminum fluoride (AlF{sub 3}) is a low refractive index material with promising optical applications for ultraviolet (UV) wavelengths. An atomic layer deposition process using trimethylaluminum and anhydrous hydrogen fluoride has been developed for the deposition of AlF{sub 3} at substrate temperatures between 100 and 200 °C. This low temperature process has resulted in thin films with UV-optical properties that have been characterized by ellipsometric and reflection/transmission measurements at wavelengths down to 200 nm. The optical loss for 93 nm thick films deposited at 100 °C was measured to be less than 0.2% from visible wavelengths down to 200 nm, and additional microstructural characterization demonstrates that the films are amorphous with moderate tensile stress of 42–105 MPa as deposited on silicon substrates. X-ray photoelectron spectroscopy analysis shows no signature of residual aluminum oxide components making these films good candidates for a variety of applications at even shorter UV wavelengths.

  15. Synthesis, deposition and characterization of ferroelectric films for electrooptic devices

    NASA Astrophysics Data System (ADS)

    Tunaboylu, Bahadir

    The use of integrable ferroelectric electro-optic thin films is a revolutionary approach in the development of high-speed, low-voltage and high-contrast ratio integrated electro-optic spatial light modulators (SLM) for free-space optoelectronic interconnects. Thin films offer improved performance over bulk ferroelectric (FE) materials because of their lower modulator capacitance and operation at high speeds with low switching energies. Integration of ferroelectric thin films with silicon technology will also impact both the uncooled infrared sensor and dynamic and nonvolatile memory technologies. Ferroelectrics such as lead lanthanum zirconate titanate (PLZT) and patassium tantalate niobate (KTN) present great potential for SLMs due to their large electro-optic (EO) effect in the bulk form. The development of thin-film SLMs require electro-optic films of high optical quality with good dielectric and EO properties. High quality thin films of PLZT and KTN were deposited using RF magnetron sputtering on r-plane sapphire substrates which offer integration capability with semiconductor devices. PLZT films with extremely large peak dielectric constant, 2800 at the Curie temperature of 180sp°C, were achieved with remarkably low dissipation loss factor <0.04. The dielectric frequency dispersion was determined to be very small up to 1 Mhz. Also, the absorption of the light in the films was very low. A giant effective quadratic electrooptic effect was demonstrated in PLZT films. These results represent a huge leap forward for the FE-SLM technology with respect to the goal of fully integrated thin film electrooptic light modulators. Microstructural development and phase transformation kinetics in PLZT films were also analyzed for the first time and are presented here. Energy required for the formation of desirable perovskite phase was determined to be 322 kJ/mol. Single-phase PLZT films with larger average grain size showed higher dielectric constants and better EO

  16. Poly-para-xylylene thin films: A study of the deposition chemistry, kinetics, film properties, and film stability

    NASA Astrophysics Data System (ADS)

    Fortin, Jeffrey Bernard

    Poly-para-xylylene, or parylene, thin films are chemically vapor deposited (CVD), conformal, pin-hole free polymeric thin films. They have found many industrial uses since there invention in 1947 and continue to find new applications in micro-electronics, biotechnology, and micro-electro-mechanical systems. In this study the deposition chemistry, deposition kinetics, film properties, and film stability were investigated. A differentially pumped quadrupole mass spectrometer was used to analyze the vapor species present during the CVD process. The identity of dimer contamination and its impact on the CVD process and film properties was studied. The quantitative conversion of dimer to monomer was investigated and it was found that conversion begins at around 385°C and by 565°C 100% conversion is obtained. The kinetics of the CVD process was analyzed for a range of substrate temperatures and chamber pressures. A new kinetic model based on a two-step adsorption was developed and fit the kinetic data well. This model should be appropriate for use with all parylene family polymers. Many of the properties of the films deposited in this study were analyzed. This includes a detailed study of surface morphology using atomic force microscopy which shows the interface width increases as a power law of film thickness. Other properties analyzed were the thermal stability, electrical properties, index of refraction, birefringence, hardness, and elastic modulus. The effect of ultraviolet (UV) radiation of lambda ≥ 250 nm on the thermal stability, electrical, and optical properties of thin parylene films was studied. The thermal stability and electrical properties of UV treated films were seen to deteriorate as the radiation dose increased. The stability of parylene thin films receiving plasma etching was analyzed. The dielectric constant, dissipation factor, and leakage current of plasma etched thin parylene films were investigated and found to be stable for the range of

  17. Tin-Doped Inorganic Amorphous Films for Use as Transparent Monolithic Phosphors

    PubMed Central

    Masai, Hirokazu; Miyata, Hiroki; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Kanemitsu, Yoshihiko

    2015-01-01

    Although inorganic crystalline phosphors can exhibit high quantum efficiency, their use in phosphor films has been limited by a reliance on organic binders that have poor durability when exposed to high-power and/or high excitation energy light sources. To address this problem, Sn2+ -doped transparent phosphate films measuring several micrometers in thickness have been successfully prepared through heat treatment and a subsequent single dip-coating process. The resulting monolithic inorganic amorphous film exhibited an internal quantum efficiency of over 60% and can potentially utilize transmitted light. Analysis of the film’s emissivity revealed that its color can be tuned by changing the amount of Mn and Sn added to influence the energy transfer from Sn2+ to Mn2+. It is therefore concluded that amorphous films containing such emission centers can provide a novel and viable alternative to conventional amorphous films containing crystalline phosphors in light-emitting devices. PMID:26061744

  18. RAPID COMMUNICATION: Surface vertical deposition for gold nanoparticle film

    NASA Astrophysics Data System (ADS)

    Diao, J. J.; Qiu, F. S.; Chen, G. D.; Reeves, M. E.

    2003-02-01

    In this rapid communication, we present the surface vertical deposition (SVD) method to synthesize the gold nanoparticle films. Under conditions where the surface of the gold nanoparticle suspension descends slowly by evaporation, the gold nanoparticles in the solid-liquid-gas junction of the suspension aggregate together on the substrate by the force of solid and liquid interface. When the surface properties of the substrate and colloidal nanoparticle suspension define for the SVD, the density of gold nanoparticles in the thin film made by SVD only depends on the descending velocity of the suspension surface and on the concentration of the gold nanoparticle suspension.

  19. Theory of elastic wave propagation in anisotropic film on anisotropic substrate: TiN film on single-crystal Si.

    PubMed

    Tewary, V K

    2002-09-01

    The delta-function representation of the elastodynamic Green's function is used to derive an expression for the elastic wave forms on the surface of an anisotropic thin film on an anisotropic substrate due to a point or a line source located at the surface of the film. The dispersion relation for surface acoustic waves (SAWs) is obtained from the poles of the Green's function. A computationally efficient algorithm is formulated to obtain the elastic constants and the density of the film from the SAW dispersion data. The theory is used to analyze measured SAW dispersion relations in a titanium nitride film on silicon. The analysis yields values of the elastic constants and the density of the film. Excellent agreement is obtained between the theoretical and experimental dispersion results. Calculated wave forms for the surface wave due to a pulsed line source on the surface of the film are reported.

  20. Fabrication of Metal-Deposited Indium Tin Oxides: Its Applications to 385 nm Light-Emitting Diodes.

    PubMed

    Kim, Min Ju; Kim, Tae Geun

    2016-03-02

    We report performance improvements in near-ultraviolet (NUV) light-emitting diodes (LEDs) using various metal-doped indium tin oxide (ITO/metals). Metals with an orbital energy gap greater than that of an In atom (e.g., Ti, Ga, Ge, and Al) are deposited on ITO, and subsequent annealing is performed to improve optical transmittance of ITO due to effective bandgap increase via the linear combination of atomic orbitals, as well as electrical conductivity; thus, current spreading via metal-doping effect at the surface of ITO. As a result, the ITO/metals (annealed at 550 °C, 1 min) exhibit 90.5-94.7% transmittance at 385 nm and a specific contact resistance of 2.1-3.0 × 10(-3) Ω cm(2), whereas the reference ITOs exhibit 76.5-89.5% and 3.2-4.5 × 10(-3) Ω cm(2), respectively. Compared to NUV LEDs using conventional ITO (60 nm), the InGaN/AlGaInN NUV LED using ITO (110 nm)/metal (3 nm) on average exhibits a 70% increase in light output power at 100 mA and a 2% decrease in forward voltage at 20 mA, with more uniform and brighter emission images. We also identified the origin for the improvement by analyzing the surface of ITO/metals using X-ray photoelectron spectroscopy and Auger electron spectroscopy. This approach could offer a simple, effective way to enhance the overall efficiency of conventional NUV LEDs using ITO.