Electronic transport mechanism in intrinsic and doped nanocrystalline silicon films deposited by RF-magnetron sputtering at low temperature

NASA Astrophysics Data System (ADS)

Benlakehal, D.; Belfedal, A.; Bouizem, Y.; Sib, J. D.; Chahed, L.; Zellama, K.

2016-12-01

The dependence on the temperature range, T, of the electronic transport mechanism in intrinsic and doped hydrogenated nanocrystalline silicon films, deposited by radiofrequency-magnetron sputtering at low substrate temperature, has been studied. Electrical conductivity measurements σ(T) have been conducted on these films, as a function of temperature, in the 93-450 K range. The analysis of these results clearly shows a thermally activated conduction process in the 273-450 K range which allows us to estimate the associated activation energy as well as the preexponential conductivity factor. While, in the lower temperature range (T < 273 K), a non-ohmic behavior is observed for the conductivity changes. The conductivity σ(T) presents a linear dependence on (T-1/4) , and a hopping mechanism is suggested to explain these results. By using the Percolation theory, further information can be gained about the density of states near the Fermi level as well as the range and the hopping energy.

Effects of specific surface area of metallic nickel particles on carbon deposition kinetics

NASA Astrophysics Data System (ADS)

Chen, Zhi-yuan; Bian, Liu-zhen; Yu, Zi-you; Wang, Li-jun; Li, Fu-shen; Chou, Kuo-Chih

2018-02-01

Carbon deposition on nickel powders in methane involves three stages in different reaction temperature ranges. Temperature programing oxidation test and Raman spectrum results indicated the formation of complex and ordered carbon structures at high deposition temperatures. The values of I(D)/ I(G) of the deposited carbon reached 1.86, 1.30, and 1.22 in the first, second, and third stages, respectively. The structure of carbon in the second stage was similar to that in the third stage. Carbon deposited in the first stage rarely contained homogeneous pyrolytic deposit layers. A kinetic model was developed to analyze the carbon deposition behavior in the first stage. The rate-determining step of the first stage is supposed to be interfacial reaction. Based on the investigation of carbon deposition kinetics on nickel powders from different resources, carbon deposition rate is suggested to have a linear relation with the square of specific surface area of nickel particles.

Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

NASA Astrophysics Data System (ADS)

Li, Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

2013-04-01

Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al2O3, ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al2O3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

Deposit formation in hydrocarbon rocket fuels

NASA Technical Reports Server (NTRS)

Roback, R.; Szetela, E. J.; Spadaccini, L. J.

1981-01-01

An experimental program was conducted to study deposit formation in hydrocarbon fuels under flow conditions that exist in high-pressure, rocket engine cooling systems. A high pressure fuel coking test apparatus was designed and developed and was used to evaluate thermal decomposition (coking) limits and carbon deposition rates in heated copper tubes for two hydrocarbon rocket fuels, RP-1 and commercial-grade propane. Tests were also conducted using JP-7 and chemically-pure propane as being representative of more refined cuts of the baseline fuels. A parametric evaluation of fuel thermal stability was performed at pressures of 136 atm to 340 atm, bulk fuel velocities in the range 6 to 30 m/sec, and tube wall temperatures in the range 422 to 811 K. Results indicated that substantial deposit formation occurs with RP-1 fuel at wall temperatures between 600 and 800 K, with peak deposit formation occurring near 700 K. No improvements were obtained when deoxygenated JP-7 fuel was substituted for RP-1. The carbon deposition rates for the propane fuels were generally higher than those obtained for either of the kerosene fuels at any given wall temperature. There appeared to be little difference between commercial-grade and chemically-pure propane with regard to type and quantity of deposit. Results of tests conducted with RP-1 indicated that the rate of deposit formation increased slightly with pressure over the range 136 atm to 340 atm. Finally, lating the inside wall of the tubes with nickel was found to significantly reduce carbon deposition rates for RP-1 fuel.

Thermal history of the unsaturated zone at Yucca Mountain, Nevada, USA

USGS Publications Warehouse

Whelan, J.F.; Neymark, L.A.; Moscati, R.J.; Marshall, B.D.; Roedder, E.

2008-01-01

Secondary calcite, silica and minor amounts of fluorite deposited in fractures and cavities record the chemistry, temperatures, and timing of past fluid movement in the unsaturated zone at Yucca Mountain, Nevada, the proposed site of a high-level radioactive waste repository. The distribution and geochemistry of these deposits are consistent with low-temperature precipitation from meteoric waters that infiltrated at the surface and percolated down through the unsaturated zone. However, the discovery of fluid inclusions in calcite with homogenization temperatures (Th) up to ???80 ??C was construed by some scientists as strong evidence for hydrothermal deposition. This paper reports the results of investigations to test the hypothesis of hydrothermal deposition and to determine the temperature and timing of secondary mineral deposition. Mineral precipitation temperatures in the unsaturated zone are estimated from calcite- and fluorite-hosted fluid inclusions and calcite ??18O values, and depositional timing is constrained by the 207Pb/235U ages of chalcedony or opal in the deposits. Fluid inclusion Th from 50 samples of calcite and four samples of fluorite range from ???35 to ???90 ??C. Calcite ??18O values range from ???0 to ???22??? (SMOW) but most fall between 12 and 20???. The highest Th and the lowest ??18O values are found in the older calcite. Calcite Th and ??18O values indicate that most calcite precipitated from water with ??18O values between -13 and -7???, similar to modern meteoric waters. Twenty-two 207Pb/235U ages of chalcedony or opal that generally postdate elevated depositional temperatures range from ???9.5 to 1.9 Ma. New and published 207Pb/235U and 230Th/Uages coupled with the Th values and estimates of temperature from calcite ??18O values indicate that maximum unsaturated zone temperatures probably predate ???10 Ma and that the unsaturated zone had cooled to near-present-day temperatures (24-26 ??C at a depth of 250 m) by 2-4 Ma. The evidence of elevated temperatures persisting in ash flow tuffs adjacent to parent calderas for as much as ???8 Ma is a new finding, but consistent with thermal modeling. Simulations using the HEAT code demonstrate that prolonged cooling of the unsaturated zone is consistent with magmatic heat inputs and deep-seated (sub-water table) hydrothermal activity generated by the large magma body ???8 km to the north that produced the 15-11 Ma ash flows and ash falls that make up Yucca Mountain. The evidence discussed in this and preceding papers strongly supports unsaturated zone deposition of the secondary minerals from descending meteoric waters. Although depositional temperatures reflect conductive (and possibly vapor-phase convective) heating of the unsaturated zone related to regional magmatic sources until perhaps 6 Ma, depositional conditions similar to the present-day unsaturated zone have prevailed for at least the past 2-4 Ma.

Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

2010-02-01

Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

Cathodoluminescence Study of Hafnium Oxide

NASA Astrophysics Data System (ADS)

Purcell, Emily; Hengehold, Robert; McClory, John

2011-10-01

Hafnium dioxide (HfO2) is increasingly being used in place of silicon oxide as a gate insulator in field effect transistors. This is primarily due to its high dielectric constant, κ, of 25. Samples of HfO2 were grown by either atomic layer deposition (ALD) or pulsed laser deposition (PLD), with the PLD samples having assorted substrate temperatures during deposition (300 C, 500 C, and 750 C). Cathodoluminescence (CL) was chosen as the technique used for studying these HfO2 samples. The CL system used was capable of beam energies ranging from 1 keV to 20 keV and beam currents ranging from 10 μA to 50 μA. A Monte Carlo calculation using CASINO software was performed in order to determine the beam energy for the desired depth of penetration. Measurements were taken at sample temperatures ranging from 7K (closed cycled cryostat) to 300K (room temperature), as well as at various beam energies and beam currents. Comparison will be made between the PLD and ALD spectra.

A Rapid Process for Fabricating Gas Sensors

PubMed Central

Hsiao, Chun-Ching; Luo, Li-Siang

2014-01-01

Zinc oxide (ZnO) is a low-toxicity and environmentally-friendly material applied on devices, sensors or actuators for “green” usage. A porous ZnO film deposited by a rapid process of aerosol deposition (AD) was employed as the gas-sensitive material in a CO gas sensor to reduce both manufacturing cost and time, and to further extend the AD application for a large-scale production. The relative resistance change (ΔR/R) of the ZnO gas sensor was used for gas measurement. The fabricated ZnO gas sensors were measured with operating temperatures ranging from 110 °C to 180 °C, and CO concentrations ranging from 100 ppm to 1000 ppm. The sensitivity and the response time presented good performance at increasing operating temperatures and CO concentrations. AD was successfully for applied for making ZnO gas sensors with great potential for achieving high deposition rates at low deposition temperatures, large-scale production and low cost. PMID:25010696

Mechanism of deposit formation on fuel-wetted metal surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stavinoha, L.L.; Westbrook, S.R.; McInnis, L.A.

1995-05-01

Experiments were performed in a Single-Tube Heat Exchanger (STHE) apparatus and a Hot Liquid Process Simulator (HLPS) configured and operated to meet Jet Fuel Thermal Oxidation Tester (JFTOT) ASTM D 3241 requirements. The HLPS-JFTOT heater tubes used were 1018 mild steel, 316 stainless steel (SS), 304 stainless steel (SS), and 304 SS tubes coated with aluminum, magnesium, gold, and copper. A low-sulfur Jet A fuel with a breakpoint temperature of 254{degrees}C was used to create deposits on the heater tubes at temperatures of 300{degrees}C, 340{degrees}C, and 380{degrees}C. Deposit thickness was measured by dielectric breakdown voltage and Auger ion milling. Pronouncedmore » differences between the deposit thickness measuring techniques suggested that both the Auger milling rate and the dielectric strength of the deposit may be affected by deposit morphology/composition (such as metal ions that may have become included in the bulk of the deposit). Carbon burnoff data were obtained as a means of judging the validity of DMD-derived deposit evaluations. ESCA data suggest that the thinnest deposit was on the magnesium-coated test tube. The Scanning Electron Microscope (SEM) photographs showed marked variations in the deposit morphology and the results suggested that surface composition has a significant effect on the mechanism of deposition. The most dramatic effect observed was that the bulk of deposits moved to tube locations of lower temperature as the maximum temperature of the tube was increased from 300{degrees} to 380{degrees}C, also verified in a single-tube heat exchanger. The results indicate that the deposition rate and quantity at elevated temperatures is not completely temperature dependent, but is limited by the concentration of dissolved oxygen and/or reactive components in the fuel over a temperature range.« less

Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.

PubMed

Panchal, A K; Rai, D K; Solanki, C S

2011-04-01

Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.

Ultras-stable Physical Vapor Deposited Amorphous Teflon Films with Extreme Fictive Temperature Reduction

NASA Astrophysics Data System (ADS)

McKenna, Gregory; Yoon, Heedong; Koh, Yung; Simon, Sindee

In the present work, we have produced highly stable amorphous fluoropolymer (Teflon AF® 1600) films to study the calorimetric and relaxation behavior in the deep in the glassy regime. Physical vapor deposition (PVD) was used to produce 110 to 700 nm PVD films with substrate temperature ranging from 0.70 Tg to 0.90 Tg. Fictive temperature (Tf) was measured using Flash DSC with 600 K/s heating and cooling rates. Consistent with prior observations for small molecular weight glasses, large enthalpy overshoots were observed in the stable amorphous Teflon films. The Tf reduction for the stable Teflon films deposited in the vicinity of 0.85 Tg was approximately 70 K compared to the Tgof the rejuvenated system. The relaxation behavior of stable Teflon films was measured using the TTU bubble inflation technique and following Struik's protocol in the temperature range from Tf to Tg. The results show that the relaxation time decreases with increasing aging time implying that devitrification is occurring in this regime.

PLD growth of CoPd thin films and characterization of their magnetic properties by magneto optical Kerr effect

NASA Astrophysics Data System (ADS)

Sedrpooshan, Mehran; Ahmadvand, Hossein; Ranjbar, Mehdi; Salamati, Hadi

2018-06-01

CoPd alloy thin films with different thicknesses and Co/Pd ratios have been deposited on Si (100) substrate by pulsed laser deposition (PLD). The magnetic properties were investigated by using the magneto-optical Kerr effect (MOKE) in both longitudinal and polar geometries. The results show that the films with thickness in the range of 6-24 nm, deposited at a low substrate temperature of 200 °C, are mostly magnetized in the plane of film. Higher deposition temperature forces the magnetic easy axis to orient in the perpendicular direction of the films.

Spray Chemical Vapor Deposition of CulnS2 Thin Films for Application in Solar Cell Devices

NASA Technical Reports Server (NTRS)

Hollingsworth, Jennifer A.; Buhro, William E.; Hepp, Aloysius F.; Jenkins. Philip P.; Stan, Mark A.

1998-01-01

Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

Method Producing an SNS Superconducting Junction with Weak Link Barrier

NASA Technical Reports Server (NTRS)

Hunt, Brian D. (Inventor)

1999-01-01

A method of producing a high temperature superconductor Josephson element and an improved SNS weak link barrier element is provided. A YBaCuO superconducting electrode film is deposited on a substrate at a temperature of approximately 800 C. A weak link barrier layer of a nonsuperconducting film of N-YBaCuO is deposited over the electrode at a temperature range of 520 C. to 540 C. at a lower deposition rate. Subsequently a superconducting counter-electrode film layer of YBaCuO is deposited over the weak link barrier layer at approximately 800 C. The weak link barrier layer has a thickness of approximately 50 A and the SNS element can be constructed to provide an edge geometry junction.

Optimum deposition conditions of ultrasmooth silver nanolayers

PubMed Central

2014-01-01

Reduction of surface plasmon-polariton losses due to their scattering on metal surface roughness still remains a challenge in the fabrication of plasmonic devices for nanooptics. To achieve smooth silver films, we study the dependence of surface roughness on the evaporation temperature in a physical vapor deposition process. At the deposition temperature range 90 to 500 K, the mismatch of thermal expansion coefficients of Ag, Ge wetting layer, and sapphire substrate does not deteriorate the metal surface. To avoid ice crystal formation on substrates, the working temperature of the whole physical vapor deposition process should exceed that of the sublimation at the evaporation pressure range. At optimum room temperature, the root-mean-square (RMS) surface roughness was successfully reduced to 0.2 nm for a 10-nm Ag layer on sapphire substrate with a 1-nm germanium wetting interlayer. Silver layers of 10- and 30-nm thickness were examined using an atomic force microscope (AFM), X-ray reflectometry (XRR), and two-dimensional X-ray diffraction (XRD2). PACS 63.22.Np Layered systems; 68. Surfaces and interfaces; thin films and nanosystems (structure and nonelectronic properties); 81.07.-b Nanoscale materials and structures: fabrication and characterization PMID:24685115

Yttria-Stabilized Zirconia Ceramic Deposition on SS430 Ferritic Steel Grown by PLD - Pulsed Laser Deposition Method

NASA Astrophysics Data System (ADS)

Khalid Rivai, Abu; Mardiyanto; Agusutrisno; Suharyadi, Edi

2017-01-01

Development of high temperature materials are one of the key issues for the deployment of advanced nuclear reactors due to higher temperature operation. One of the candidate materials for that purpose is ceramic-coated ferritic steel that one of the functions is to be a thermal barrier coating (TBC). Thin films of YSZ (Ytrria-Stabilized Zirconia) ceramic have been deposited on a SS430 ferritic steel using Pulsed Laser Deposition (PLD) at Center For Science and Technology of Advanced Materials laboratory - National Nuclear Energy Agency of Indonesia (BATAN). The thin film was deposited with the chamber pressure range of 200-225 mTorr, the substrate temperature of 800oC, and the number of laser shots of 3×104, 6×104 and 9×104. Afterward, the samples were analyzed using Scanning Electron Microscope - Energy Dispersive X-ray Spectroscope (SEM-EDS), X-Ray Diffractometer (XRD), Atomic Force Microscope (AFM) and Vickers hardness tester. The results showed that the YSZ could homogeneously and sticky deposited on the surface of the ferritic steel. The surfaces were very smoothly formed with the surface roughness was in the range of 70 nm. Furthermore, thickness, composition of Zr4+ dan Y3+, the crystallinity, and hardness property was increased with the increasing the number of the shots.

Growth behavior of carbon nanotubes on multilayered metal catalyst film in chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cui, H.; Eres, G.; Howe, J. Y.; Puretkzy, A.; Varela, M.; Geohegan, D. B.; Lowndes, D. H.

2003-06-01

The temperature and time dependences of carbon nanotube (CNT) growth by chemical vapor deposition are studied using a multilayered Al/Fe/Mo catalyst on silicon substrates. Within the 600-1100 °C temperature range of these studies, narrower temperature ranges were determined for the growth of distinct types of aligned multi-walled CNTs and single-walled CNTs by using high-resolution transmission electron microscopy and Raman spectroscopy. At 900 °C, in contrast to earlier work, double-walled CNTs are found more abundant than single-walled CNTs. Defects also are found to accumulate faster than the ordered graphitic structure if the growth of CNTs is extended to long durations.

Dependence of Magnetic Properties of Co/Pt Multilayers on Deposition Temperature of Pt Buffer Layers

NASA Astrophysics Data System (ADS)

Shiomi, Shigeru; Nishimura, Tomotaka; Kobayashi, Tadashi; Masuda, Morio

1993-04-01

A 15-nm-thick Pt buffer layer was deposited on a glass slide at temperature Ts(Ptbuf) ranging from 30 to 300°C by e-gun evaporation. Following the cooling in vacuum to ambient temperature, Co and Pt layers have been alternately deposited on it. Very large perpendicular anisotropy and coercivity have been obtained at Ts(Ptbuf) higher than 200°C. The (111) preferred orientation of the Co/Pt multilayer as well as the Pt buffer layer became more pronounced with elevating Ts(Ptbuf), to which the enhancement of perpendicular anisotropy with elevating Ts(Ptbuf) might be ascribable.

Structural and optical properties of electron beam evaporated yttria stabilized zirconia thin films

NASA Astrophysics Data System (ADS)

Kirubaharan, A. Kamalan; Kuppusami, P.; Singh, Akash; Dharini, T.; Ramachandran, D.; Mohandas, E.

2015-06-01

Yttria stabilized zirconia (10 mole % Y2O3) thin films were deposited on quartz substrates using electron beam physical vapor deposition at the substrate temperatures in the range 300 - 973 K. XRD analysis showed cubic crystalline phase of YSZ films with preferred orientation along (111). The surface roughness was found to increase with the increase of deposition temperatures. The optical band gap of ˜5.7 eV was calculated from transmittance curves. The variation in the optical properties is correlated with the changes in the microstructural features of the films prepared as a function of substrate temperature.

Glasses of three alkyl phosphates show a range of kinetic stabilities when prepared by physical vapor deposition

NASA Astrophysics Data System (ADS)

Beasley, M. S.; Tylinski, M.; Chua, Y. Z.; Schick, C.; Ediger, M. D.

2018-05-01

In situ AC nanocalorimetry was used to characterize vapor-deposited glasses of three phosphates with increasing lengths of alkyl side chains: trimethyl phosphate, triethyl phosphate, and tributyl phosphate. The as-deposited glasses were assessed in terms of their reversing heat capacity, onset temperature, and isothermal transformation time. Glasses with a range of kinetic stabilities were prepared, including kinetically stable glasses, as indicated by high onset temperatures and long transformation times. Trimethyl phosphate forms kinetically stable glasses, similar to many other organic molecules, while triethyl phosphate and tributyl phosphate do not. Triethyl phosphate and tributyl phosphate present the first examples of non-hydrogen bonding systems that are unable to form stable glasses via vapor deposition at 0.2 nm/s. Based on experiments utilizing different deposition rates, we conclude that triethyl phosphate and tributyl phosphate lack the surface mobility required for stable glass formation. This may be related to their high enthalpies of vaporization and the internal structure of the liquid state.

Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates

NASA Astrophysics Data System (ADS)

Pereira, M. J.; Lourenço, A. A. C. S.; Amaral, V. S.

2014-07-01

Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 ºC). Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonal structural phases, the first one being preponderant over the latter, particularly in the thinner films. The films possess soft magnetic properties and their coercivity is thickness dependent in the range 15-200 Oe at 300K. Electrical resistivity measurements signal the structural transition and suggest the occurrence of avalanche and return-point memory effects, in temperature cycling through the magnetic/structural transition range.

Low Temperature, Selective Atomic Layer Deposition of Nickel Metal Thin Films.

PubMed

Kerrigan, Marissa M; Klesko, Joseph P; Blakeney, Kyle J; Winter, Charles H

2018-04-25

We report the growth of nickel metal films by atomic layer deposition (ALD) employing bis(1,4-di- tert-butyl-1,3-diazadienyl)nickel and tert-butylamine as the precursors. A range of metal and insulating substrates were explored. An initial deposition study was carried out on platinum substrates. Deposition temperatures ranged from 160 to 220 °C. Saturation plots demonstrated self-limited growth for both precursors, with a growth rate of 0.60 Å/cycle. A plot of growth rate versus substrate temperature showed an ALD window from 180 to 195 °C. Crystalline nickel metal was observed by X-ray diffraction for a 60 nm thick film deposited at 180 °C. Films with thicknesses of 18 and 60 nm grown at 180 °C showed low root mean square roughnesses (<2.5% of thicknesses) by atomic force microscopy. X-ray photoelectron spectroscopies of 18 and 60 nm thick films deposited on platinum at 180 °C revealed ionizations consistent with nickel metal after sputtering with argon ions. The nickel content in the films was >97%, with low levels of carbon, nitrogen, and oxygen. Films deposited on ruthenium substrates displayed lower growth rates than those observed on platinum substrates. On copper substrates, discontinuous island growth was observed at ≤1000 cycles. Film growth was not observed on insulating substrates under any conditions. The new nickel metal ALD procedure gives inherently selective deposition on ruthenium and platinum from 160 to 220 °C.

Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Mele, P.; Saini, S.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

2013-06-01

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300 °C-600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10-3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Antimony-Doped Tin Oxide Thin Films Grown by Home Made Spray Pyrolysis Technique

NASA Astrophysics Data System (ADS)

Yusuf, Gbadebo; Babatola, Babatunde Keji; Ishola, Abdulahi Dimeji; Awodugba, Ayodeji O.; Solar cell Collaboration

2016-03-01

Transparent conducting antimony-doped tin oxide (ATO) films have been deposited on glass substrates by home made spray pyrolysis technique. The structural, electrical and optical properties of the ATO films have been investigated as a function of Sb-doping level and annealing temperature. The optimum target composition for high conductivity and low resistivity was found to be 20 wt. % SnSb2 + 90 wt. ATO. Under optimized deposition conditions of 450oC annealing temperature, electrical resistivity of 5.2×10-4 Ω -cm, sheet resistance of 16.4 Ω/sq, average optical transmittance of 86% in the visible range, and average optical band-gap of 3.34eV were obtained. The film deposited at lower annealing temperature shows a relatively rough, loosely bound slightly porous surface morphology while the film deposited at higher annealing temperature shows uniformly distributed grains of greater size. Keywords: Annealing, Doping, Homemade spray pyrolysis, Tin oxide, Resistivity

Reducing the surface roughness beyond the pulsed-laser-deposition limit.

PubMed

Vasco, E; Polop, C; Sacedón, J L

2009-10-01

Here, we outline the theoretical fundamentals of a promising growth kinetics of films from the vapor phase, in which pulsed fluxes are combined with temperature transients to enable short-range surface relaxations (e.g., species rearrangements) and to inhibit long-range relaxations (atomic exchange between species). A group of physical techniques (fully pulsed thermal and/or laser depositions) based on this kinetics is developed that can be used to prepare films with roughnesses even lower than those obtained with pulsed-laser deposition, which is the physical vapor-phase deposition technique that has produced the flattest films reported so far.

Using paleomagnetism to uncover long-runout pyroclastic flows

NASA Astrophysics Data System (ADS)

Lerner, G. A.; Cronin, S. J.; Turner, G. M.

2017-12-01

Understanding the conditions under which volcanic deposits were emplaced is vital to better preparing for hazards at an active stratovolcano. The coherence of paleomagnetic directions in different parts of the blocking temperature spectrum between the clasts of mass flow deposits has proven to be a useful tool for ascertaining emplacement temperatures. These temperature estimates can help in distinguishing between hot pyroclastic density currents (PDCs) and cold lahars. In the case of more clast-poor distal deposits, however, it can be difficult to obtain sufficient clast material for effective paleomagnetic study. In this study, the problem was remedied by using oriented and strengthened samples of matrix material from mass flow deposits in the 11,500 BP Warea Formation from Mt. Taranaki, New Zealand. Paleomagnetic data from matrix samples was used to supplement the limited data obtained from the traditional clast analysis in order to determine the emplacement temperature of the deposits. Comparison of paleomagnetic directions obtained from matrix samples at several sites within the Warea Formation revealed it as a PDC with matrix temperatures over 200°C and clasts reaching temperatures of up to 410°C at the time of deposition. This discovery of hot PDC deposits at distances >20 km from the summit of the volcano extends their known range at this volcano by 5 km. These findings will significantly change the hazard mapping and emergency planning for this region.

Glasses and Liquids Low on the Energy Landscape Prepared by Physical Vapor Deposition

NASA Astrophysics Data System (ADS)

Dalal, Shakeel; Fakhraai, Zahra; Ediger, Mark

2014-03-01

The lower portions of the potential energy landscape for glass-forming materials such as polymers and small molecules were historically inaccessible by experiments. Physical vapor deposition is uniquely able to prepare materials in this portion of the energy landscape, with the properties of the deposited material primarily modulated by the substrate temperature. Here we report on high-throughput experiments which utilize a temperature gradient stage to enable rapid screening of vapor-deposited organic glasses. Using ellipsometry, we characterize a 100 K range of substrate temperatures in a single experiment, allowing us to rapidly determine the density, kinetic stability, fictive temperature and molecular orientation of these glasses. Their properties fall into three temperature regimes. At substrate temperatures as low as 0.97Tg, we prepare materials which are equivalent to the supercooled liquid produced by cooling the melt. Below 0.9Tg (1.16TK) the properties of materials are kinetically controlled and highly tunable. At intermediate substrate temperatures we are able to produce materials whose bulk properties match those expected for the equilibrium supercooled liquid, down to 1.16TK, but are structurally anisotropic.

Optical properties of spin-on deposited low temperature titanium oxide thin films

NASA Astrophysics Data System (ADS)

Rantala, J. T.; Kärkkäinen, A. H. O.

2003-06-01

This letter presents a method to fabricate high quality, high refractive index titanium oxide thin films by applying liquid phase spin-on deposition combined with low temperature annealing. The synthesis of the liquid form titanium oxide material is carried out using a sol-gel synthesis technique. The material can be annealed at low temperature (150 C°) to achieve relatively high refractive index of 1.94 at 632.8 nm wavelength, whereas annealing at 350 C° results in index of 2.03 at 632.8 nm. Film depositions are demonstrated on silicon substrates with 0.5% uniformity in thickness. Refractive indices and extinction coefficients are characterized over a broad wavelength range to demonstrate the optical performance of this novel aqueous phase spin-on deposited hybrid titanium oxide material.

Luminescence parameters of InP/ZnS@AAO nanostructures

NASA Astrophysics Data System (ADS)

Savchenko, S. S.; Vokhmintsev, A. S.; Weinstein, I. A.

2016-03-01

Nanostructured membranes of anodic aluminum oxide (AAO) with InP/ZnS semiconductor nanocrystals deposited in pores were synthesized by electrochemical technique, physical deposition and post processing in an ultrasonic bath. Photoluminescence spectra of the samples were studied. Fluorescent properties of the quantum dots are found to be retained after the deposition. The color range is illustrated that can be covered using membranes annealed at temperatures < 900°C and by varying the concentration of the deposited InP/ZnS nanocrystals. Chromaticity coordinates and correlated color temperature for the fabricated white InP/ZnS@AAO phosphor are (0.21, 0.26) and 4115 K, respectively.

Pulsed Laser Deposition of High Temperature Protonic Films

NASA Technical Reports Server (NTRS)

Dynys, Fred W.; Berger, M. H.; Sayir, Ali

2006-01-01

Pulsed laser deposition has been used to fabricate nanostructured BaCe(0.85)Y(0.15)O3- sigma) films. Protonic conduction of fabricated BaCe(0.85)Y(0.15)O(3-sigma) films was compared to sintered BaCe(0.85)Y(0.15)O(3-sigma). Sintered samples and laser targets were prepared by sintering BaCe(0.85)Y(0.15)O(3-sigma) powders derived by solid state synthesis. Films 1 to 8 micron thick were deposited by KrF excimer laser on porous Al2O3 substrates. Thin films were fabricated at deposition temperatures of 700 to 950 C at O2 pressures up to 200 mTorr using laser pulse energies of 0.45 - 0.95 J. Fabricated films were characterized by X-ray diffraction, electron microscopy and electrical impedance spectroscopy. Single phase BaCe(0.85)Y(0.15)O(3-sigma) films with a columnar growth morphology are observed with preferred crystal growth along the [100] or [001] direction. Results indicate [100] growth dependence upon laser pulse energy. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C to 900 C. Electrical conduction behavior was dependent upon film deposition temperature. Maximum conductivity occurs at deposition temperature of 900 oC; the electrical conductivity exceeds the sintered specimen. All other deposited films exhibit a lower electrical conductivity than the sintered specimen. Activation energy for electrical conduction showed dependence upon deposition temperature, it varied

Surface roughness analysis of SiO2 for PECVD, PVD and IBD on different substrates

NASA Astrophysics Data System (ADS)

Amirzada, Muhammad Rizwan; Tatzel, Andreas; Viereck, Volker; Hillmer, Hartmut

2016-02-01

This study compares surface roughness of SiO2 thin layers which are deposited by three different processes (plasma-enhanced chemical vapor deposition, physical vapor deposition and ion beam deposition) on three different substrates (glass, Si and polyethylene naphthalate). Plasma-enhanced chemical vapor deposition (PECVD) processes using a wide range of deposition temperatures from 80 to 300 °C have been applied and compared. It was observed that the nature of the substrate does not influence the surface roughness of the grown layers very much. It is also perceived that the value of the surface roughness keeps on increasing as the deposition temperature of the PECVD process increases. This is due to the increase in the surface diffusion length with the rise in substrate temperature. The layers which have been deposited on Si wafer by ion beam deposition (IBD) process are found to be smoother as compared to the other two techniques. The layers which have been deposited on the glass substrates using PECVD reveal the highest surface roughness values in comparison with the other substrate materials and techniques. Different existing models describing the dynamics of clusters on surfaces are compared and discussed.

Modeling the Spray Forming of H13 Steel Tooling

NASA Astrophysics Data System (ADS)

Lin, Yaojun; McHugh, Kevin M.; Zhou, Yizhang; Lavernia, Enrique J.

2007-07-01

On the basis of a numerical model, the temperature and liquid fraction of spray-formed H13 tool steel are calculated as a function of time. Results show that a preheated substrate at the appropriate temperature can lead to very low porosity by increasing the liquid fraction in the deposited steel. The calculated cooling rate can lead to a microstructure consisting of martensite, lower bainite, retained austenite, and proeutectoid carbides in as-spray-formed material. In the temperature range between the solidus and liquidus temperatures, the calculated temperature of the spray-formed material increases with increasing substrate preheat temperature, resulting in a very low porosity by increasing the liquid fraction of the deposited steel. In the temperature region where austenite decomposition occurs, the substrate preheat temperature has a negligible influence on the cooling rate of the spray-formed material. On the basis of the calculated results, it is possible to generate sufficient liquid fraction during spray forming by using a high growth rate of the deposit without preheating the substrate, and the growth rate of the deposit has almost no influence on the cooling rate in the temperature region of austenite decomposition.

High-throughput growth temperature optimization of ferroelectric SrxBa1-xNb2O6 epitaxial thin films using a temperature gradient method

NASA Astrophysics Data System (ADS)

Ohkubo, I.; Christen, H. M.; Kalinin, Sergei V.; Jellison, G. E.; Rouleau, C. M.; Lowndes, D. H.

2004-02-01

We have developed a multisample film growth method on a temperature-gradient substrate holder to quickly optimize the film growth temperature in pulsed-laser deposition. A smooth temperature gradient is achieved, covering a range of temperatures from 200 to 830 °C. In a single growth run, the optimal growth temperature for SrxBa1-xNb2O6 thin films on MgO(001) substrates was determined to be 750 °C, based on results from ellipsometry and piezoresponse force microscopy. Variations in optical properties and ferroelectric domains structures were clearly observed as function of growth temperature, and these physical properties can be related to their different crystalline quality. Piezoresponse force microscopy indicated the formation of uniform ferroelectric film for deposition temperatures above 750 °C. At 660 °C, isolated micron-sized ferroelectric islands were observed, while samples deposited below 550 °C did not exhibit clear piezoelectric contrast.

Metal-organic chemical vapor deposition of aluminum oxide thin films via pyrolysis of dimethylaluminum isopropoxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, Benjamin W.; Sweet, William J. III; Rogers, Bridget R.

2010-03-15

Metal-organic chemical vapor deposited aluminum oxide films were produced via pyrolysis of dimethylaluminum isopropoxide in a high vacuum reaction chamber in the 417-659 deg. C temperature range. Deposited films contained aluminum, oxygen, and carbon, and the carbon-to-aluminum ratio increased with increased deposition temperature. Aluminum-carbon bonding was observed in films deposited at 659 deg. C by x-ray photoelectron spectroscopy, but not in films deposited at 417 deg. C. The apparent activation energy in the surface reaction controlled regime was 91 kJ/mol. The O/Al and C/Al ratios in the deposited films were greater and less than, respectively, the ratios predicted by themore » stoichiometry of the precursor. Flux analysis of the deposition process suggested that the observed film stoichiometries could be explained by the participation of oxygen-containing background gases present in the reactor at its base pressure.« less

Growth behavior of carbon nanotubes on multilayered metal catalyst film (Al/Fe/Mo) in chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cui, H.; Eres, G.; Howe, J. Y.; Puretzky, A.; Varela, M.; Geohegan, D. B.; Lowndes, D. H.

2003-03-01

The temperature- and time- dependences of carbon nanotube (CNT) growth by chemical vapor deposition are studied using a multilayered Al/Fe/Mo catalyst on silicon substrates. Within the 600 - 1100 ^oC temperature range in these studies, narrower temperature ranges were determined for the growth of aligned multi-walled carbon nanotubes (MWCNTs) and single-walled carbon nanotubes (SWCNTs). Aligned MWCNT growth is favored at lower temperatures ( ˜700 ^oC). At 900 ^oC, in contrast to earlier work, double-walled carbon nanotubes (DWCNTs) are found more abundant than SWCNTs. At further elevated temperature, highly defective carbon structures are produced. Defects also are found to accumulate faster than the ordered graphitic structure if the growth of CNTs is extended to long growth durations. Atomic force microscopy, field emission scanning electron microscopy, high resolution transmission electron microscopy, and Raman spectroscopy are used to characterize the catalyst and various types of CNTs.

Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Films.

PubMed

Mattinen, Miika; King, Peter J; Khriachtchev, Leonid; Meinander, Kristoffer; Gibbon, James T; Dhanak, Vin R; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku

2018-04-19

Semiconducting 2D materials, such as SnS 2 , hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS 2 films has remained a great challenge. Herein, continuous wafer-scale 2D SnS 2 films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 °C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS 2 films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS 2 films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Deposition of Nanostructured CdS Thin Films by Thermal Evaporation Method: Effect of Substrate Temperature

PubMed Central

Memarian, Nafiseh; Rozati, Seyeed Mohammad; Concina, Isabella

2017-01-01

Nanocrystalline CdS thin films were grown on glass substrates by a thermal evaporation method in a vacuum of about 2 × 10−5 Torr at substrate temperatures ranging between 25 °C and 250 °C. The physical properties of the layers were analyzed by transmittance spectra, XRD, SEM, and four-point probe measurements, and exhibited strong dependence on substrate temperature. The XRD patterns of the films indicated the presence of single-phase hexagonal CdS with (002) orientation. The structural parameters of CdS thin films (namely crystallite size, number of grains per unit area, dislocation density and the strain of the deposited films) were also calculated. The resistivity of the as-deposited films were found to vary in the range 3.11–2.2 × 104 Ω·cm, depending on the substrate temperature. The low resistivity with reasonable transmittance suggest that this is a reliable way to fine-tune the functional properties of CdS films according to the specific application. PMID:28773133

Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO x films and multilayer Ge/SiO2 structures

NASA Astrophysics Data System (ADS)

Grachev, D. A.; Ershov, A. V.; Karabanova, I. A.; Pirogov, A. V.; Nezhdanov, A. V.; Mashin, A. I.; Pavlov, D. A.

2017-05-01

The GeO x films and multilayer nanoperiodic Ge/SiO2 structures containing germanium nanocrystals were prepared by physical vapor deposition in vacuum. The properties of the films and multilayer structures were controlled by varying the deposition temperature in the range of 35-590°C and the annealing temperature in the range of 400-1000°C. A comparative study of the optical and structural characteristics of the nanosystems was performed using the methods of Raman scattering spectroscopy, IR spectroscopy, photoluminescence, and electron microscopy, which demonstrated a qualitative similarity of the nanosystems. It was found that annealing at temperatures in the range of 600-800°C leads to the formation of germanium nanocrystals with a high density ( 1012 cm-2), whereas in the materials not subjected to annealing, their density did not exceed 1010 cm-2. The average size of the nanocrystals was found to be 5 ± 2 nm. For both nanosystems, three luminescence bands were observed at 1.2, 1.5-1.7, and 1.7-2.0 eV. It was assumed that the origin of these bands is associated with germanium nanocrystals, oxygen-deficient centers in GeOx, and defects at the Ge/dielectric interface, respectively.

The influence of diurnal temperatures on the hydrochemistry of a tufa-depositing stream

NASA Astrophysics Data System (ADS)

Drysdale, R.; Lucas, S.; Carthew, K.

2003-12-01

At-a-station diurnal variations in carbonate hydrochemistry were measured during four observation periods at Davys Creek, a tufa-depositing stream in central NSW, Australia. Major ion concentrations and continuously logged measurements of specific conductivity, pH and temperature showed that changes in the amount of CaCO3 deposited upstream of the study reach were directly related to changes in diurnal water temperatures, which control the rate of CO2 efflux to the atmosphere. The greatest upstream losses occurred during the mid-afternoon water temperature peak, whereas the lowest upstream losses occurred at sunrise, when water temperatures were at their lowest. Cloudy days at all times of the year produced small diurnal water temperatures ranges (c. 2-5°C) and, consequently, relatively small changes in upstream CaCO3 loss (23-50 mg L-1) through the day. Clear sunny days, especially during summer months, produced large diurnal water temperature changes (up to c. 11°C), which in turn triggered diurnal changes in upstream CaCO3 loss of up to 100 mg L-1. By implication, the active reach of tufa deposition must advance downstream and increase in length during the evening and vice versa during the day. Given that the temperature of Davys Creek waters are a function of insolation, changes in the reach of tufa deposition under baseflow conditions are a direct function of the prevailing weather. This has implications for the palaeoclimatic interpretation of fossil tufa deposits. Copyright

Growth and characterization of V2O5 nanorods deposited by spray pyrolysis at low temperatures

NASA Astrophysics Data System (ADS)

Abd-Alghafour, N. M.; Ahmed, Naser M.; Hassan, Zai.; Mohammad, Sabah M.; Bououdina, M.

2016-07-01

Vanadium pentoxide (V2O5) nanorods were deposited by spray pyrolysis on preheated glass substrates at low temperatures. The influence of substrate temperature on the crystallization of V2O5 has been investigated. X-ray diffraction analysis (XRD) revealed that the films deposited at Tsub = 300°C were orthorhombic structures with preferential along (001) direction. Formation of nanorods from substrate surface which led to the formation of films with small-sized and rod-shaped nanostructure is observed by field scanning electron microscopy. Optical transmittance in the visible range increases to reach a maximum value of about 80% for a substrate temperature of 350°C. PL spectra reveal one main broad peak centered around 540 nm with high intensity.

Alternate current conductivity in BSb films prepared by PLD technique: Electron transport processes in low-temperature range (10-275 K)

NASA Astrophysics Data System (ADS)

Das, Shirsendu; Bhunia, Ritamay; Hussain, Shamima; Bhar, Radhaballabh; Kumar Pal, Arun

2017-04-01

This study is focused on the measurement of alternate current (a.c.) electrical conductivity of BSb films, deposited on fluorine-doped tin oxide (FTO)-coated glass substrates at 673K by the pulsed laser deposition (PLD) technique. The frequency-dependent a.c. conductivity is measured as a function of temperature (10-275K) and frequency (100Hz-100kHz). The transport processes governing the electrical conduction processes in this material are analyzed critically. It is observed from FESEM micrograph that the film is composed of small discrete grain with sizes varying in the range 6-12nm. It is interesting to notice from \\lnσ_ac versus 1000/T plot that there are three distinct zones: i) Semiconductor zone at high temperature from 275 to 150K, ii) Insulator zone at low temperature from 70 to 10K and iii) an abrupt change of the \\lnσ_ac versus 1000/T plot at ˜ 75 indicating MIS transition occurring in this BSb film. We found that the activation energy for the BSb films in the lower-temperature range was quite low ˜ 6 to 41neV, while that in the higher-temperature range was 20 to 50meV.

Constraining the Thermal History of the Midcontinent Rift System with Clumped Isotopes and Organic Thermal Maturity Indices

NASA Astrophysics Data System (ADS)

Gallagher, T. M.; Sheldon, N. D.; Mauk, J. L.; Gueneli, N.; Brocks, J. J.

2015-12-01

The Mesoproterozoic (~1.1 Ga) North American Midcontinent Rift System (MRS) has been of widespread interest to researchers studying its economic mineral deposits, continental rifting processes, and the evolution of early terrestrial life and environments. For their age, the MRS rocks are well preserved and have not been deeply buried, yet a thorough understanding of the regional thermal history is necessary to constrain the processes that emplaced the mineral deposits and how post-burial alteration may have affected various paleo-records. To understand the thermal history of the MRS better, this study presents carbonate clumped isotope (Δ47) temperatures from deposits on the north and south sides of the rift. Due to the age of these deposits and known post-depositional processes, uncertainties exist about whether the clumped isotope signature has been reset. To test this, three generations of calcite were analyzed from the Nonesuch Fm. from the White Pine mine in Michigan including: sedimentary limestone beds, early diagenetic carbonate nodules, and hydrothermal calcite veins associated with the emplacement of copper mineralization. Clumped isotope temperatures from the White Pine mine range from 84 to 131°C, with a hydrothermal vein producing the hottest temperature. The clumped isotope temperature range for samples throughout the rift expands to 41-134°C. The hottest temperatures are associated with areas of known copper mineralization, whereas the coolest temperatures are found on the northern arm of the rift in Minnesota, far from known basin-bounding faults. Our hottest temperatures are broadly consistent with preexisting maximum thermal temperature estimates based on clay mineralogy, fluid inclusions, and organic geochemistry data. Clumped isotope results will also be compared to new hydrocarbon maturity data from the Nonesuch Fm., which suggest that bitumen maturities consistently fall within the early oil window across Michigan and Wisconsin.

Structural and gasochromic properties of WO3 films prepared by reactive sputtering deposition

NASA Astrophysics Data System (ADS)

Yamamoto, S.; Hakoda, T.; Miyashita, A.; Yoshikawa, M.

2015-02-01

The effects of deposition temperature and film thickness on the structural and gasochromic properties of tungsten trioxide (WO3) films used for the optical detection of diluted cyclohexane gas have been investigated. The WO3 films were prepared on SiO2 substrates by magnetron sputtering, with the deposition temperature ranging from 300 to 550 °C in an Ar and O2 gas mixture. The films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), and Rutherford backscattering spectroscopy (RBS). The gasochromic properties of the WO3 films, coated with a catalytic Pt layer, were examined by exposing them to up to 5% cyclohexane in N2 gas. It was found that (001)-oriented monoclinic WO3 films, with a columnar structure, grew at deposition temperatures between 400 and 450 °C. Furthermore, (010)-oriented WO3 films were preferably formed at deposition temperatures higher than 500 °C. The gasochromic characterization of the Pt/WO3 films revealed that (001)-oriented WO3 films, with cauliflower-like surface morphology, were appropriate for the optical detection of cyclohexane gas.

Effect of interfacial intermixing on the Dzyaloshinskii-Moriya interaction in Pt/Co/Pt

NASA Astrophysics Data System (ADS)

Wells, Adam W. J.; Shepley, Philippa M.; Marrows, Christopher H.; Moore, Thomas A.

2017-02-01

We study the effect of sputter-deposition conditions, namely, substrate temperature and chamber base pressure, upon the interface quality of epitaxial Pt/Co/Pt thin films with perpendicular magnetic anisotropy. Here we define interface quality to be the inverse of the sum in quadrature of roughness and intermixing. We find that samples with the top Co/Pt layers grown at 250 ∘C exhibit a local maximum in roughness intermixing and that the interface quality is better for lower or higher deposition temperatures, up to 400 ∘C,above which the interface quality degrades. Imaging the expansion of magnetic domains in an in-plane field using wide-field Kerr microscopy, we determine the interfacial Dzyaloshinskii-Moriya interaction (DMI) in films in the deposition temperature range 100 ∘C to 300 ∘C . We find that the net DMI increases as the difference between top and bottom Co interface quality increases. Furthermore, for sufficiently low base pressures, the net DMI increases linearly with the deposition temperature, indicating that fine-tuning of the DMI may be achieved via the deposition conditions.

Emplacement temperatures of the November 22, 1994 nuee ardente deposits, Merapi Volcano, Java

USGS Publications Warehouse

Voight, B.; Davis, M.J.

2000-01-01

A study of emplacement temperatures was carried out for the largest of the 22 November 1994 nuée ardente deposits at Merapi Volcano, based mainly on the response of plastic and woody materials subjected to the hot pyroclastic current and the deposits, and to some extent on eyewitness observations. The study emphasizes the Turgo–Kaliurang area in the distal part of the area affected by the nuée ardente, where nearly 100 casualties occurred. The term nuée ardente as used here includes channeled block-and-ash flows, and associated ash-clouds of surge and fallout origins. The emplacement temperature of the 8 m thick channeled block-and-ash deposit was relatively high, ∼550°C, based mainly on eyewitness reports of visual thermal radiance. Emplacement temperatures for ash-cloud deposits a few cm thick were deduced from polymer objects collected at Turgo and Kaliurang. Most polymers do not display a sharp melting range, but polyethylene terephthalate used in water bottles melts between 245 and 265°C, and parts of the bottles that had been deformed during fabrication molding turn a milky color at 200°C. The experimental evidence suggests that deposits in the Turgo area briefly achieved a maximum temperature near 300°C, whereas those near Kaliurang were <200°C. Maximum ash deposit temperatures occurred in fallout with a local source in the channeled block-and-ash flow of the Boyong river valley; the surge deposit was cooler (∼180°C) due to entrainment of cool air and soils, and tree singe-zone temperatures were around 100°C.

Mechanical properties and fractal analysis of the surface texture of sputtered hydroxyapatite coatings

NASA Astrophysics Data System (ADS)

Bramowicz, Miroslaw; Braic, Laurentiu; Azem, Funda Ak; Kulesza, Slawomir; Birlik, Isil; Vladescu, Alina

2016-08-01

This aim of this work is to establish a relationship between the surface morphology and mechanical properties of hydroxyapatite coatings prepared using RF magnetron sputtering at temperatures in the range from 400 to 800 °C. The topography of the samples was scanned using atomic force microscopy, and the obtained 3D maps were analyzed using fractal methods to derive the spatial characteristics of the surfaces. X-ray photoelectron spectroscopy revealed the strong influence of the deposition temperature on the Ca/P ratio in the growing films. The coatings deposited at 600-800 °C exhibited a Ca/P ratio between 1.63 and 1.69, close to the stoichiometric hydroxyapatite (Ca/P = 1.67), which is crucial for proper osseointegration. Fourier-transform infrared spectroscopy showed that the intensity of phosphate absorption bands increased with increasing substrate temperature. Each sample exhibited well defined and sharp hydroxyapatite band at 566 cm-1, although more pronounced for the coatings deposited above 500 °C. Both the hardness and elastic modulus of the coated samples decrease with increasing deposition temperature. The surface morphology strongly depends on the deposition temperature. The sample deposited at 400 °C exhibits circular cavities dug in an otherwise flat surface. At higher deposition temperatures, these cavities increase in size and start to overlap each other so that at 500 °C the surface is composed of closely packed peaks and ridges. At that point, the characteristics of the surface turns from the dominance of cavities to grains of similar size, and develops in a similar manner at higher temperatures.

High-resolution TEM Studies of Carbon Nanotubes and Catalyst Nanoparticles Produced During CVD from Metal Multilayer Films

NASA Astrophysics Data System (ADS)

Howe, Jane Y.; Puretzky, Alex A.; Geohegan, David B.; Cui, Hongtao; Eres, Varela; Maria, Alex A.; Lowndes, Douglas H.

2003-03-01

The structure of single-wall and multiwall carbon nanotubes and associated metal catalyst nanoparticles produced during chemical vapor deposition from multilayered metal films deposited on Si and Mo substrates were studied by high-resolution TEM and EDS. Electron beam-evaporated metal multilayer films (e.g. Al-Fe-Mo, typically 11-50 nm total thickness) roughen upon heat treatment to form a variety of catalyst particle sizes suitable for carbon nanotube growth by chemical vapor deposition using acetylene, hydrogen, and argon flow gases. This study investigates these nanoparticles, the type of nanotubes grown, their wall, tip, and basal structures, as well as the associated amounts of amorphous carbon deposited on their walls in different temperature and pressure ranges. Mixtures of SWNT and MWNT are found even for low growth temperatures (650-700 C), while rapid growth of vertically-aligned multiwall nanotubes (VA-MWNTs) predominate in a narrow temperature range at a given pressure. Arrested growth experiments were performed to determine the time periods for SWNT vs. MWNT growth. The nature of the catalyst nanoparticles, their support structure, and insights on the mechanisms of growth will be discussed.

Boron carbide coating deposition on tungsten and testing of tungsten layers and coating under intense plasma load

DOE Office of Scientific and Technical Information (OSTI.GOV)

Airapetov, A. A.; Begrambekov, L. B., E-mail: lbb@plasma.mephi.ru; Buzhinskiy, O. I.

2015-12-15

A device intended for boron carbide coating deposition and material testing under high heat loads is presented. A boron carbide coating 5 μm thick was deposited on the tungsten substrate. These samples were subjected to thermocycling loads in the temperature range of 400–1500°C. Tungsten layers deposited on tungsten substrates were tested in similar conditions. Results of the surface analysis are presented.

A study on the effects of temperature and substrate structure on the templated two-phase film growth via a hybrid model

NASA Astrophysics Data System (ADS)

Lu, Xiao; Li, Jia; Zhu, Jian-Gang; Laughlin, David E.; Zhu, Jingxi

2018-06-01

Templated growth of two-phase thin films can achieve desirably ordered microstructures. In such cases, the microstructure of the growing films follows the topography of the template. By combining the Potts model Monte Carlo simulation and the "level set" method, an attempt was previously made to understand the physical mechanism behind the templated growth process. In the current work, this model is further used to study the effect of two parameters within the templated growth scenario, namely, the temperature and the geometric features of the template. The microstructure of the thin film grown with different lattice temperatures and domes is analyzed. It is found that within a moderate temperature range, the effect of geometric features took control of the ordering of the microstructure by its influence on the surface energy gradient. Interestingly, within this temperature range, as the temperature is increased, an ordered microstructure forms on a template without the optimal geometric features, which seems to be a result of competition between the kinetics and the thermodynamics during deposition. However, when the temperature was either above or below this temperature range, the template provided no guide to the whole deposition so that no ordered microstructure formed.

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

DOE PAGES

Mi, Hongyi; Yuan, Hao -Chih; Seo, Jung -Hun; ...

2017-03-27

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max.more » Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.« less

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mi, Hongyi; Yuan, Hao -Chih; Seo, Jung -Hun

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V th, transconductance g m, cut-off frequency f T and maximum oscillation frequency f max.more » Finally, the results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.« less

Magnetism of Amorphous and Nano-Crystallized Dc-Sputter-Deposited MgO Thin Films

PubMed Central

Mahadeva, Sreekanth K.; Fan, Jincheng; Biswas, Anis; Sreelatha, K.S.; Belova, Lyubov; Rao, K.V.

2013-01-01

We report a systematic study of room-temperature ferromagnetism (RTFM) in pristine MgO thin films in their amorphous and nano-crystalline states. The as deposited dc-sputtered films of pristine MgO on Si substrates using a metallic Mg target in an O2 containing working gas atmosphere of (N2 + O2) are found to be X-ray amorphous. All these films obtained with oxygen partial pressure (PO2) ~10% to 80% while maintaining the same total pressure of the working gas are found to be ferromagnetic at room temperature. The room temperature saturation magnetization (MS) value of 2.68 emu/cm3 obtained for the MgO film deposited in PO2 of 10% increases to 9.62 emu/cm3 for film deposited at PO2 of 40%. However, the MS values decrease steadily for further increase of oxygen partial pressure during deposition. On thermal annealing at temperatures in the range 600 to 800 °C, the films become nanocrystalline and as the crystallite size grows with longer annealing times and higher temperature, MS decreases. Our study clearly points out that it is possible to tailor the magnetic properties of thin films of MgO. The room temperature ferromagnetism in MgO films is attributed to the presence of Mg cation vacancies. PMID:28348346

Noncatalytic thermocouple coatings produced with chemical vapor deposition for flame temperature measurements.

PubMed

Bahlawane, N; Struckmeier, U; Kasper, T S; Osswald, P

2007-01-01

Chemical vapor deposition (CVD) and metal-organic chemical vapor deposition (MOCVD) have been employed to develop alumina thin films in order to protect thermocouples from catalytic overheating in flames and to minimize the intrusion presented to the combustion process. Alumina films obtained with a CVD process using AlCl(3) as the precursor are dense, not contaminated, and crystallize in the corundum structure, while MOCVD using Al(acetyl acetone)(3) allows the growth of corundum alumina with improved growth rates. These films, however, present a porous columnar structure and show some carbon contamination. Therefore, coated thermocouples using AlCl(3)-CVD were judged more suitable for flame temperature measurements and were tested in different fuels over a typical range of stoichiometries. Coated thermocouples exhibit satisfactory measurement reproducibility, no temporal drifts, and do not suffer from catalytic effects. Furthermore, their increased radiative heat loss (observed by infrared spectroscopy) allows temperature measurements over a wider range when compared to uncoated thermocouples. A flame with a well-known temperature profile established with laser-based techniques was used to determine the radiative heat loss correction to account for the difference between the apparent temperature measured by the coated thermocouple and the true flame temperature. The validity of the correction term was confirmed with temperature profile measurements for several flames previously studied in different laboratories with laser-based techniques.

Low temperature ECR-CVD of SiN X for III-V device passivation

NASA Astrophysics Data System (ADS)

Lee, J. W.; MacKenzie, K.; Johnson, D.; Shul, R. J.; Pearton, S. J.; Ren, F.

1998-06-01

Electron Cyclotron Resonance SiH 4/N 2 and SiH 4/NH 3 discharges have been employed for deposition of SiN X over a range of temperatures (25-120°C), source powers (200-700 W), pressures (15-40 mTorr), SiH 4 percentages (20-50%) and additional Ar flow rates (0-30 sccm). Deposition rates were in the range 100-700 Å min -1, with refractive indices of 1.7-2.3. The SiH 4/N 2 chemistry allowed a wider process window for tailoring the stress in the SiN X films, with chuck temperature, ECR source power, chamber pressure, SiH 4 composition and Ar addition all producing a transition from compressive to tensile stress, or vice-versa.

Understanding and Controlling the Aggregative Growth of Platinum Nanoparticles in Atomic Layer Deposition: An Avenue to Size Selection

PubMed Central

2017-01-01

We present an atomistic understanding of the evolution of the size distribution with temperature and number of cycles in atomic layer deposition (ALD) of Pt nanoparticles (NPs). Atomistic modeling of our experiments teaches us that the NPs grow mostly via NP diffusion and coalescence rather than through single-atom processes such as precursor chemisorption, atom attachment, and Ostwald ripening. In particular, our analysis shows that the NP aggregation takes place during the oxygen half-reaction and that the NP mobility exhibits a size- and temperature-dependent scaling. Finally, we show that contrary to what has been widely reported, in general, one cannot simply control the NP size by the number of cycles alone. Instead, while the amount of Pt deposited can be precisely controlled over a wide range of temperatures, ALD-like precision over the NP size requires low deposition temperatures (e.g., T < 100 °C) when growth is dominated by atom attachment. PMID:28178779

Visible photoluminescence from plasma-polymerized-organosilicone thin films deposited from HMDSO/O2 induced remote plasma: effect of oxygen fraction

NASA Astrophysics Data System (ADS)

Naddaf, M.; Saloum, S.

2008-09-01

Visible photoluminescence (PL) from thin films deposited on silicon wafers by remote plasma polymerization of the hexamethyledisiloxane (HMDSO)/O2 mixture in a radio-frequency hollow cathode discharge reactor has been investigated as a function of different oxygen fractions ( \\chi _{O_2 } =0 , 0.38, 0.61, 0.76 and 0.9). At room temperature, the film deposited at \\chi _{O_2 } =0 exhibits a strong, broad PL band peak centred at around 537.6 nm. A blue shift and a considerable decrease (~one order) in the intensity of the PL peak are observed after the addition of oxygen. Furthermore, in contrast to the film deposited from pure HMDSO, the low temperature (15 K) PL spectra of the film deposited from different HMDSO/O2 mixtures exhibit two separated 'green-blue' and 'yellow-green' PL peaks. The PL behaviour of the deposited films is correlated with their structural and morphological properties, investigated by using Fourier transform infrared, atomic force microscope and contact angle techniques. In addition, it is found from spectrophotometry measurements that the deposited films have relatively low absorption coefficients (in the range 100-500 cm-1) in the spectral range of their PL emission, attractive for possible integrated optics devices.

Reflectance of evaporated rhenium and tungsten films in the vacuum ultraviolet from 300 to 2000 A.

NASA Technical Reports Server (NTRS)

Cox, J. T.; Hass, G.; Ramsey, J. B.; Hunter, W. R.

1972-01-01

Discussion of the dependence of the reflectance of Re and W on the substrate temperature during deposition, film thickness, and aging during exposure to air. Re and W of 99.99% purity were evaporated with a 6-kW fine-focused electron gun and deposited on glass and fused quartz plates of various temperatures ranging from 40 to 500 C. With Re, films of highest reflectance were obtained by evaporation onto unheated substrates, whereas with W, heating of the substrate greatly increased the reflectance of the deposited films. For both metals, the reflectance losses during extended exposure to air remained rather small, indicating that the oxide films formed on both film materials at room temperature were very thin.

Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Oder, Tom N.; Kundeti, Krishna C.; Borucki, Nicholas; Isukapati, Sundar B.

2017-12-01

Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes. Post deposition annealing at 500 oC for up to 60 hours in vacuum was carried to further improve the contact properties. Optimum barrier height of 1.13 eV and ideality factor of 1.04 was obtained in contacts deposited at 200 oC and annealed for 60 hours. Under a reverse voltage bias of 400 V, the average leakage current on these set of diodes was 6.6 x 10-8 A. Based on the x-ray diffraction analysis, TiC, Ti5Si3 and Ti3SiC2 were formed at the Ti/SiC interface. These results could be beneficial to improving the performance of 4H-SiC Schottky diodes for high power and high temperature applications.

Lithofacies and biofacies of mid-Paleozoic thermal spring deposits in the Drummond Basin, Queensland, Australia

NASA Technical Reports Server (NTRS)

Walter, M. R.; Desmarais, D.; Farmer, J. D.; Hinman, N. W.

1996-01-01

The Devonian to Carboniferous sinters of the Drummond Basin, Australia, are among the oldest well established examples of fossil subaerial hot springs. Numerous subaerial and subaqueous spring deposits are known from the geological record as a result of the occurrence of economic mineral deposits in many of them. Some are reported to contain fossils, but very few have been studied by paleobiologists; they represent an untapped source of paleobiological information on the history of hydrothermal ecosystems. Such systems are of special interest, given the molecular biological evidence that thermophilic bacteria lie near the root of the tree of extant life. The Drummond Basin sinters are very closely comparable with modern examples in Yellowstone National Park and elsewhere. Thirteen microfacies are recognisable in the field, ranging from high temperature apparently abiotic geyserite through various forms of stromatolitic sinter probably of cyanobacterial origin to ambient temperature marsh deposits. Microfossils in the stromatolites are interpreted as cyanobacterial sheaths. Herbaceous lycopsids occur in the lower temperature deposits.

High Temperature Multilayer Environmental Barrier Coatings Deposited Via Plasma Spray-Physical Vapor Deposition

NASA Technical Reports Server (NTRS)

Harder, Bryan James; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

2014-01-01

Si-based ceramic matrix composites (CMCs) require environmental barrier coatings (EBCs) in combustion environments to avoid rapid material loss. Candidate EBC materials have use temperatures only marginally above current technology, but the addition of a columnar oxide topcoat can substantially increase the durability. Plasma Spray-Physical Vapor Deposition (PS-PVD) allows application of these multilayer EBCs in a single process. The PS-PVD technique is a unique method that combines conventional thermal spray and vapor phase methods, allowing for tailoring of thin, dense layers or columnar microstructures by varying deposition conditions. Multilayer coatings were deposited on CMC specimens and assessed for durability under high heat flux and load. Coated samples with surface temperatures ranging from 2400-2700F and 10 ksi loads using the high heat flux laser rigs at NASA Glenn. Coating morphology was characterized in the as-sprayed condition and after thermomechanical loading using electron microscopy and the phase structure was tracked using X-ray diffraction.

Polishability of thin electrolytic and electroless NiP layers

NASA Astrophysics Data System (ADS)

Kinast, Jan; Beier, Matthias; Gebhardt, Andreas; Risse, Stefan; Tünnermann, Andreas

2015-10-01

Ultra-precise metal optics are key components of sophisticated scientific instrumentation in astronomy and space applications, covering a wide spectral range. Especially for applications in the visible or ultra-violet spectral ranges, a low roughness of the optics is required. Therefore, a polishable surface is necessary. State of the art is an amorphous nickel-phosphorus (NiP) layer, which enables several polishing techniques achieving a roughness of <1 nm RMS. Typically, these layers are approximately 30 μm to 60 μm thick. Deposited on Al6061, the bimetallic effect leads to a restricted operational temperature, caused by different coefficients of thermal expansion of Al6061 and NiP. Thinner NiP layers reduce the bimetallic effect. Hence, the possible operating temperature range. A deterministic shape correction via Magnetorheological Finishing of the substrate Al6061 leads to low shape deviations prior to the NiP deposition. This allows for depositing thin NiP-layers, which are polishable via a chemical mechanical polishing technique aiming at ultra-precise metal optics. The present article shows deposition processes and polishability of electroless and electrolytic NiP layers with thicknesses between 1 μm and 10 μm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berdova, Maria; Liu, Xuwen; Franssila, Sami, E-mail: sami.franssila@aalto.fi

The investigation of mechanical properties of atomic layer deposition HfO{sub 2} films is important for implementing these layers in microdevices. The mechanical properties of films change as a function of composition and structure, which accordingly vary with deposition temperature and post-annealing. This work describes elastic modulus, hardness, and wear resistance of as-grown and annealed HfO{sub 2}. From nanoindentation measurements, the elastic modulus and hardness remained relatively stable in the range of 163–165 GPa and 8.3–9.7 GPa as a function of deposition temperature. The annealing of HfO{sub 2} caused significant increase in hardness up to 14.4 GPa due to film crystallization and densification. Themore » structural change also caused increase in the elastic modulus up to 197 GPa. Wear resistance did not change as a function of deposition temperature, but improved upon annealing.« less

Near term application of water cooling

NASA Astrophysics Data System (ADS)

Horner, M. W.; Caruvana, A.; Cohn, A.; Smith, D. P.

1980-03-01

The paper presents studies of combined gas and steam-turbine cycles related to the near term application of water cooling technology to the commercial gas turbine operating on heavy residual oil or coal derived liquid fuels. Water cooling promises significant reduction of hot corrosion and ash deposition at the turbine first-stage nozzle. It was found that: (1) corrosion of some alloys in the presence of alkali contaminant was less as metal temperatures were lowered to the 800-1000 F range, (2) the rate of ash deposition is increased for air-cooled and water-cooled nozzles at the 2060 F turbine firing temperature compared to 1850 F, (3) the ash deposit for the water cooled nozzle was lighter and more easily removed at both 1850 and 2050 F, (4) on-line nutshelling was effective on the water-cooled nozzles even at 2050 F, and (5) the data indicates that the rate of ash deposition may be sensitive to surface wall temperatures.

Monitoring Streambed Scour/Deposition Under Nonideal Temperature Signal and Flood Conditions

NASA Astrophysics Data System (ADS)

DeWeese, Timothy; Tonina, Daniele; Luce, Charles

2017-12-01

Streambed erosion and deposition are fundamental geomorphic processes in riverbeds, and monitoring their evolution is important for ecological system management and in-stream infrastructure stability. Previous research showed proof of concept that analysis of paired temperature signals of stream and pore waters can simultaneously provide monitoring scour and deposition, stream sediment thermal regime, and seepage velocity information. However, it did not address challenges often associated with natural systems, including nonideal temperature variations (low-amplitude, nonsinusoidal signal, and vertical thermal gradients) and natural flooding conditions on monitoring scour and deposition processes over time. Here we addressed this knowledge gap by testing the proposed thermal scour-deposition chain (TSDC) methodology, with laboratory experiments to test the impact of nonideal temperature signals under a range of seepage velocities and with a field application during a pulse flood. Both analyses showed excellent match between surveyed and temperature-derived bed elevation changes even under very low temperature signal amplitudes (less than 1°C), nonideal signal shape (sawtooth shape), and strong and changing vertical thermal gradients (4°C/m). Root-mean-square errors on predicting the change in streambed elevations were comparable with the median grain size of the streambed sediment. Future research should focus on improved techniques for temperature signal phase and amplitude extractions, as well as TSDC applications over long periods spanning entire hydrographs.

Geochronology, fluid inclusions and isotopic characteristics of the Chaganbulagen Pb-Zn-Ag deposit, Inner Mongolia, China

NASA Astrophysics Data System (ADS)

Li, Tiegang; Wu, Guang; Liu, Jun; Wang, Guorui; Hu, Yanqing; Zhang, Yunfu; Luo, Dafeng; Mao, Zhihao; Xu, Bei

2016-09-01

The large Chaganbulagen Pb-Zn-Ag deposit is located in the Derbugan metallogenic belt of the northern Great Xing'an Range. The vein-style orebodies of the deposit occur in the NWW-trending fault zones. The ore-forming process at the deposit can be divided into three stages: an early quartz-pyrite-arsenopyrite-pyrrhotite-sphalerite-galena-chalcopyrite stage, a middle quartz-carbonate-pyrite-sphalerite-galena-silver-bearing minerals stage, and a late quartz-carbonate-pyrite stage. The sericite sample yielded a 40Ar -39Ar plateau age of 138 ± 1 Ma and an isochron age of 137 ± 3 Ma, and the zircon LA-ICP-MS U-Pb age of monzogranite porphyry was 143 ± 2 Ma, indicating that the ages of mineralization and monzogranite porphyry in the Chaganbulagen deposit should be the Early Cretaceous, and that the mineralization should be slightly later than the intrusion of monzogranite porphyry. There are only liquid inclusions in quartz veins of the Chaganbulagen deposit. Homogenization temperatures, densities, and salinities of the fluid inclusions from the early stage are 261-340 °C, 0.65-0.81 g/cm3, and 0.7-6.3 wt.% NaCl eqv., respectively. Fluid inclusions of the middle stage have homogenization temperatures, densities, and salinities of 209-265 °C, 0.75-0.86 g/cm3, and 0.5-5.7 wt.% NaCl eqv., respectively. For fluid inclusions of the late stage, their homogenization temperatures, densities, and salinities are 173-219 °C, 0.85-0.91 g/cm3, and 0.4-2.7 wt.% NaCl eqv., respectively. The ore-forming fluids of the deposit are generally characterized by moderate temperature and low salinity and density, and belong to an H2O-NaCl ± CO2 ± CH4 system. The δ18Owater values calculated for ore-bearing quartz vary from - 17.9‰ to - 10.8‰, and the δDV-SMOW values from bulk extraction of fluid inclusion waters vary from - 166‰ to - 127‰, suggesting that the ore-forming fluids consist dominantly of meteoric water. The δ34SV-CDT values range from 1.4‰ to 4.1‰. The 206Pb/204Pb, 207Pb/204Pb, and 208Pb/204Pb values of the ore minerals are in the ranges of 18.302-19.037, 15.473-15.593, and 38.110-38.945, respectively. The data for the S and Pb isotopic systems indicate that the ore-forming metals and sulfur came from Mesozoic magma. The Chaganbulagen deposit is a low-sulfidation epithermal Pb-Zn-Ag deposit, and the temperature decrease is the dominant mechanism for the deposition of ore-forming materials.

Annealing Temperature Dependence of ZnO Nanostructures Grown by Facile Chemical Bath Deposition for EGFET pH Sensors

NASA Astrophysics Data System (ADS)

Bazilah Rosli, Aimi; Awang, Zaiki; Sobihana Shariffudin, Shafinaz; Herman, Sukreen Hana

2018-03-01

Zinc Oxide (ZnO) nanostructures were deposited using chemical bath deposition (CBD) technique in water bath at 95 °C for 4 h. Post-deposition heat treatment in air ambient at various temperature ranging from 200-600 °C for 30 min was applied in order to enhance the electrical properties of ZnO nanostructures as the sensing membrane of extended-gate field effect transistor (EGFET) pH sensor. The as-deposited sample was prepared for comparison. The samples were characterized in terms of physical and sensing properties. FESEM images showed that scattered ZnO nanorods were formed for the as-deposited sample, and the morphology of the ZnO nanorods changed to ZnO nanoflowers when the heat treatment was applied from 200-600 °C. For sensing properties, the samples heated at 300 °C showed the higher sensitivity which was 39.9 mV/pH with the linearity of 0.9792. The sensing properties was increased with the increasing annealing treatment temperature up to 300 °C before decreased drastically.

The distribution, structure, and composition of freshwater ice deposits in Bolivian salt lakes

USGS Publications Warehouse

Hurlbert, S.H.; Chang, Cecily C.Y.

1988-01-01

Freshwater ice deposits are described from seven, high elevation (4117-4730 m), shallow (mean depth <30 cm), saline (10-103 g l-1) lakes in the southwestern corner of Bolivia. The ice deposits range to several hundred meters in length and to 7 m in height above the lake or playa surface. They are located near the lake or salar margins; some are completely surrounded by water, others by playa deposits or salt crusts. Upper surfaces and sides of the ice deposits usually are covered by 20-40 cm of white to light brown, dry sedimentary materials. Calcite is the dominant crystalline mineral in these, and amorphous materials such as diatom frustules and volcanic glass are also often abundant. Beneath the dry overburden the ice occurs primarily as horizontal lenses 1-1000 mm thick, irregularly alternating with strata of frozen sedimentary materials. Ice represents from 10 to 87% of the volume of the deposits and yields freshwater (TFR <3 g l-1) when melted. Oxygen isotope ratios for ice are similar to those for regional precipitation and shoreline seeps but much lower than those for the lakewaters. Geothermal flux is high in the region as evidenced by numerous hot springs and deep (3.0-3.5 m) sediment temperatures of 5-10??C. This flux is one cause of the present gradual wasting away of these deposits. Mean annual air temperatures for the different lakes probably are all in the range of -2 to 4??C, and mean midwinter temperatures about 5??C lower. These deposits apparently formed during colder climatic conditions by the freezing of low salinity porewaters and the building up of segregation ice lenses. ?? 1988 Dr W. Junk Publishers.

Z-Pinch Plasma Neutron Sources

DTIC Science & Technology

2006-03-24

deuterium into 9 to 14 keV (around 10 keV), which is well in the fusion energy range we are interested in. To make plasma radiation sources work, we...showing the 1-D dynamics of the pinch plasma implosion, temperature, fusion energy production and deposition for the conditions of shot Z1422. The minimum...histories of ion and electron temperatures, fusion energy production and energy deposition in ID RMHD run modeling deuterium shot Z1422. In our simulations

Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

NASA Technical Reports Server (NTRS)

Foote, M. C.; Jones, B. B.; Hunt, B. D.; Barner, J. B.; Vasquez, R. P.; Bajuk, L. J.

1992-01-01

The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

Deposition of Na2SO4 from salt-seeded combustion gases of a high velocity burner rig

NASA Astrophysics Data System (ADS)

Santoro, G. J.; Gokoglu, S. A.; Kohl, F. J.; Stearns, C. A.; Rosner, D. E.

The mechanism of deposition of Na2SO4 was studied under controlled laboratory conditions and the results have been compared to a recently developed comprehensive theory of vapor deposition. Thus Na2SO4, NaCl, NaNO3 and simulated sea salt solutions were injected into the combustor of a nominal Mach 0.3 burner rig burning jet fuel at constant fuel/air ratios. The deposits formed on inert collectors, rotation in the cross flow of the combustion gases, were weighed and analyzed. Collector temperature was uniform and could be varied over a large range by internal air cooling. Deposition rates and dew point temperatures were determined. Supplemental testing included droplet size measurements of the atomized salt solutions. These tests along with thermodynamic and transport calculations were utilized in the interpretation of the deposition results.

Deposition of Na2SO4 from salt-seeded combustion gases of a high velocity burner rig

NASA Technical Reports Server (NTRS)

Santoro, G. J.; Gokoglu, S. A.; Kohl, F. J.; Stearns, C. A.; Rosner, D. E.

1984-01-01

The mechanism of deposition of Na2SO4 was studied under controlled laboratory conditions and the results have been compared to a recently developed comprehensive theory of vapor deposition. Thus Na2SO4, NaCl, NaNO3 and simulated sea salt solutions were injected into the combustor of a nominal Mach 0.3 burner rig burning jet fuel at constant fuel/air ratios. The deposits formed on inert collectors, rotation in the cross flow of the combustion gases, were weighed and analyzed. Collector temperature was uniform and could be varied over a large range by internal air cooling. Deposition rates and dew point temperatures were determined. Supplemental testing included droplet size measurements of the atomized salt solutions. These tests along with thermodynamic and transport calculations were utilized in the interpretation of the deposition results.

Effect of growth parameters on the optical properties of ZnO nanostructures grown by simple solution methods

NASA Astrophysics Data System (ADS)

Kothari, Anjana

2017-05-01

ZnO, a wide band gap semiconductor is of significant interest for a range of practical applications. One of the highly attractive features of ZnO is to grow variety of nanostructures by using low-cost techniques. In this paper, we report deposition of ZnO nanostructure rod-arrays (NRA) via low-temperature, solution-based deposition techniques such as chemical bath deposition (CBD) and microwave-assisted chemical bath deposition (MACBD). A detailed study of film deposition parameters such as variation in concentration of precursors and deposition temperature has been carried out. Compositional and structural study of the films has been done by X-ray Diffractometer to know the phase and purity of the final product. Morphological study of these structures has been carried out by Scanning Electron Microscopy. Optical study such as transmittance and diffuse reflectance of the films has been carried out as a function of growth parameters.

Perspectives on the Growth of High Edge Density Carbon Nanostructures: Transitions from Vertically Oriented Graphene Nanosheets to Graphenated Carbon Nanotubes

PubMed Central

2015-01-01

Insights into the growth of high edge density carbon nanostructures were achieved by a systematic parametric study of plasma-enhanced chemical vapor deposition (PECVD). Such structures are important for electrode performance in a variety of applications such as supercapacitors, neural stimulation, and electrocatalysis. A morphological trend was observed as a function of temperature whereby graphenated carbon nanotubes (g-CNTs) emerged as an intermediate structure between carbon nanotubes (CNTs) at lower temperatures and vertically oriented carbon nanosheets (CNS), composed of few-layered graphene, at higher temperatures. This is the first time that three distinct morphologies and dimensionalities of carbon nanostructures (i.e., 1D CNTs, 2D CNSs, and 3D g-CNTs) have been synthesized in the same reaction chamber by varying only a single parameter (temperature). A design of experiments (DOE) approach was utilized to understand the range of growth permitted in a microwave PECVD reactor, with a focus on identifying graphenated carbon nanotube growth within the process space. Factors studied in the experimental design included temperature, gas ratio, catalyst thickness, pretreatment time, and deposition time. This procedure facilitates predicting and modeling high edge density carbon nanostructure characteristics under a complete range of growth conditions that yields various morphologies of nanoscale carbon. Aside from the morphological trends influenced by temperature, a relationship between deposition temperature and specific capacitance emerged from the DOE study. Transmission electron microscopy was also used to understand the morphology and microstructure of the various high edge density structures. From these results, a new graphene foliate formation mechanism is proposed for synthesis of g-CNTs in a single deposition process. PMID:25089165

Structural transition in sputter-deposited amorphous germanium films by aging at ambient temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okugawa, M.; Nakamura, R., E-mail: nakamura@mtr.osakafu-u.ac.jp; Numakura, H.

The structure of amorphous Ge (a-Ge) films prepared by sputter-deposition and the effects of aging at ambient temperature and pressure were studied by pair-distribution-function (PDF) analysis from electron scattering and molecular dynamics simulations. The PDFs of the as-deposited and aged samples for 3–13 months showed that the major peaks for Ge-Ge bonds decrease in intensity and broaden with aging for up to 7 months. In the PDFs of a-Ge of molecular dynamics simulation obtained by quenching liquid at different rates, the major peak intensities of a slowly cooled model are higher than those of a rapidly cooled model. Analyses onmore » short- and medium-range configurations show that the slowly cooled model includes a certain amount of medium-range ordered (MRO) clusters, while the rapidly cooled model includes liquid-like configurations rather than MRO clusters. The similarity between experimental and computational PDFs implies that as-deposited films are similar in structure to the slowly cooled model, whereas the fully aged films are similar to the rapidly cooled model. It is assumed that as they undergo room-temperature aging, the MRO clusters disintegrate and transform into liquid-like regions in the same matrix. This transition in local configurations is discussed in terms of instability and the non-equilibrium of nanoclusters produced by a vapor-deposition process.« less

Effects of oxygen partial pressure, deposition temperature, and annealing on the optical response of CdS:O thin films as studied by spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Junda, Maxwell M.; Grice, Corey R.; Subedi, Indra; Yan, Yanfa; Podraza, Nikolas J.

2016-07-01

Ex-situ spectroscopic ellipsometry measurements are made on radio frequency magnetron sputtered oxygenated cadmium sulfide (CdS:O) thin films. Films are deposited onto glass substrates at room temperature and at 270 °C with varying oxygen to total gas flow ratios in the sputtering ambient. Ellipsometric spectra from 0.74 to 5.89 eV are collected before and after annealing at 607 °C to simulate the thermal processes during close-space sublimation of overlying cadmium telluride in that solar cell configuration. Complex dielectric function (ɛ = ɛ1 + iɛ2) spectra are extracted for films as a function of oxygen gas flow ratio, deposition temperature, and post-deposition annealing using a parametric model accounting for critical point transitions and an Urbach tail for sub-band gap absorption. The results suggest an inverse relationship between degree of crystallinity and oxygen gas flow ratio, whereas annealing is shown to increase crystallinity in all samples. Direct band gap energies are determined from the parametric modeling of ɛ and linear extrapolations of the square of the absorption coefficient. As-deposited samples feature a range of band gap energies whereas annealing is shown to result in gap energies ranging only from 2.40 to 2.45 eV, which is close to typical band gaps for pure cadmium sulfide.

The Bairendaba silver polymetallic deposit in Inner Mongolia, China: characteristics of ore-forming fluid and genetic type of ore deposit

NASA Astrophysics Data System (ADS)

Wang, Ying; Xie, Yuling; Wu, Haoran

2018-02-01

Bairendaba silver-polymetallic deposit is located in the middle south of the Xing Meng orogenic belt, and in the silver-polymetallic metallogenic belt on the west slope of the southern of Great Xing’an Range. Based on studying of the fluid inclusion, we discuss the characteristics of ore-forming fluid and the metallic genesis of the Bairendaba silver-polymetallic deposit. By means of the analysis of the fluid inclusions, homogenization temperature, salinity and composition were studied in quartz and fluorite. The result is as the follows: with homogenization temperatures of fluid inclusions in quartz veins being 196∼312 °C, the average 244.52 °C, and fluid salinity 2.90∼9.08 wt%NaCl; with homogenization temperatures of fluid inclusions in fluorite being 127∼306 °C, the average 196.92 °C, and fluid salinity 2.90∼9.34 wt% NaCl. The ore-forming fluid is mainly composed of water and the gas. The results of laser Raman analysis show that the gas phase is mainly CH4. It shows that the ore-forming fluid is characterized by medium-low temperature and low-salinity system. The temperature of ore-forming fluid is from high to low, and the salinity from high to low, and the meteoric water or metamorphic water is added during deposit. According to the geological characteristics of the mining area, it is considered that the genetic type of the ore deposit should be the fault-controlled and the medium-low temperature hydrothermal deposit related to magmatic hydrothermal activities.

Optoelectrical, structural and morphological characterization of Cu2ZnSnSe4 compound used in photovoltaic applications

NASA Astrophysics Data System (ADS)

Mesa, F.; Leguizamon, A.; Dussan, A.; Gordillo, G.

2016-10-01

In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied.

Structure and Electric Conduction in Pulsed Laser-Deposited ZnO Thin Films Individually Doped with N, P, or Na

NASA Astrophysics Data System (ADS)

Jiao, D. L.; Zhong, X. C.; Qiu, W. Q.; Zhang, H.; Liu, Z. W.; Zhang, G. Q.

2018-03-01

N-, P-, and Na-doped ZnO films with c-axis orientation were produced by pulsed laser deposition using N2O or O2 as the reaction gas. The effects of deposition temperature and deposition pressure on the lattice structure, morphology, and electric conduction have been investigated. High gas pressure leads to large-sized grains with large grain barriers, which cause a reduced mobility. P acts as an acceptor and the number of compensating defects in the P-doped film is reduced under high O2 pressure. Na also acts as an acceptor, and the effects of high temperature on Na-doped films are encouraging as the solubility of the dopant is high. However, high temperature may cause less incorporation of N and P in the film. In the present work, p-type conduction has not been obtained in N- and P-doped films despite a wide range of processing parameters employed. Na-doped films display an increasing trend towards p-type films at high temperatures and high O2 pressures. These results provide an insight on how these dopants behave in ZnO films and indicate that the careful selection of the deposition conditions is necessary in order to obtain p-type films by pulsed laser deposition.

Thermal Anomaly Engendered by the Emplacement of AN Au-DEPOSIT: Example from the Franciscan Complex

NASA Astrophysics Data System (ADS)

Lahfid, A.; Lacroix, B.; Delchini, S.; Hughes, J.

2016-12-01

The thermal history of the Lucia subterrane located within the Franciscan Complex (California, USA) has been previously proposed by Underwood et al. (1995). Based on both vitrinite reflectance (Rm) and illite cristallinity methods, these authors suggest that the Lucia subterrane is locally perturbed by a thermal anomaly (up to 300ºC), probably caused by the emplacement of an Au-deposit: the Los Burros Gold deposit. Although both the thermal anomaly and the deposit seem spatially correlated, their relationship is still poorly constrained. In order to better explain the anomalous temperatures recorded in the vicinity of the deposit and their possible link with mineralization processes, we first performed detailed geological and structural mapping within the Los Burros district coupled to a thermal study. The peak temperature reached by metasediments from the Lucia subterrane have been regionally investigated using Raman Spectroscopy of Carbonaceous Materials (RSCM) method. In addition, through a careful fluid-inclusion study of the deposit, the potential source and the temperature of the fluid responsible for the Los Burros Au-deposit emplacement are currently being investigated. Our preliminary results confirm the previous temperatures and the presence of the thermal anomaly in the range 260-320ºC as inferred by Underwood et al (1995). In addition, our structural interpretation shows that the Los Burros deposit was emplaced during a late tectonic event marked by local reorientation of the regional tectonic features and the emplacement of meter-wide, quartz-calcite-sulfide extension veins. The temperatures determined by both methods (RSCM thermometry and fluid inclusion microthermometry) are consistent and support that the thermal anomaly is likely generated by the emplacement of the Los Burros Au-deposit during a local tectonic event.

Raman studies on molecular and ionic forms in solid layers of nitrogen dioxide - Temperature and light induced effects

NASA Astrophysics Data System (ADS)

Givan, A.; Loewenschuss, A.

1990-12-01

Raman spectra of zero-pressure-formed N2O4 solid layers are reported. Sample composition is extremely dependent upon deposition conditions. For ordered and pure solid N2O4(D2h), produced by slow NO2 deposition, temperature cycling over the range in which the solid is stable shows no significant spectral changes and does not result in autoionization, as argued in a previous Raman study. Fast and low temperature deposited layers are amorphous and multicomponent, showing bands of disordered and isomeric molecular N2O4 and of ionic NO + NO3, nitrosonium nitrate. For nitrosonium nitrate, three solid modifications can be characterized spectroscopically. In the amorphous phase, a light induced, temperature dependent, reversible transition between molecular and ionic nitrogen tetroxide is observed below 150 K. The paths leading to nitrosonium nitrate formation are examined.

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

PubMed

Wu, Jingjin; Zhao, Yinchao; Zhao, Ce Zhou; Yang, Li; Lu, Qifeng; Zhang, Qian; Smith, Jeremy; Zhao, Yongming

2016-08-13

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV-vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350-550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

PubMed Central

Wu, Jingjin; Zhao, Yinchao; Zhao, Ce Zhou; Yang, Li; Lu, Qifeng; Zhang, Qian; Smith, Jeremy; Zhao, Yongming

2016-01-01

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition. PMID:28773816

Electrical and optical properties of molybdenum doped zinc oxide films prepared by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, R. Subba; Sreedhar, A.; Uthanna, S., E-mail: uthanna@rediffmail.com

Molybdenum doped zinc oxide (MZO) films were deposited on to glass substrates held at temperatures in the range from 303 to 673 K by reactive RF magnetron sputtering method. The chemical composition, crystallographic structure and surface morphology, electrical and optical properties of the films were determined. The films contained the molybdenum of 2.7 at. % in ZnO. The films deposited at 303 K were of X-ray amorphous. The films formed at 473 K were of nanocrystalline in nature with wurtzite structure. The crystallite size of the films was increased with the increase of substrate temperature. The optical transmittance of the films was inmore » the visible range was 80–85%. The molybdenum (2.7 at %) doped zinc oxide films deposited at substrate temperature of 573 K were of nanocrystalline with electrical resistivity of 7.2×10{sup −3} Ωcm, optical transmittance of 85 %, optical band gap of 3.35 eV and figure of merit 30.6 Ω{sup −1}cm{sup −1}.« less

Thermoelectric Properties of Al-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Ichinose, A.

2014-06-01

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures ( T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K-2 at 600 K, surpassing the best AZO film previously reported in the literature.

Crystal Structure Characterization of Thin Layer Zinc Oxide

NASA Astrophysics Data System (ADS)

Doyan, Aris; Susilawati; Azizatul Fitri, Siti; Ahzan, Sukainil

2017-05-01

In this research the characterization of the crystal structure of a thin layer of ZnO (zinc oxide) were synthesized by sol - gel method and spin coating deposited on a glass substrate. The samples were divided into three sol concentrations of 0.1, 0.3, 0.5 Molar and two deposition temperature is 350 °C, and 550 °C. UV-Vis. spectrophotometer results showed that in the spectrum of visible light (wavelength range 300-800 nm) has a transmittance value of which increases with increasing concentration and temperature deposition of zinc oxide, otherwise the value of the absorption and the band gap energy decreases with the addition of concentration and deposition temperature. The transmittances value of the highest and lowest absorption was 93.5% and 0.03 is at a concentration of 0.1 M and zinc oxide deposition temperature of 550 °C, with a value of band gap energy of 2.98 eV. The XRD results showed that the zinc oxide crystal orientation in the field of 013 with a crystal grain size 14.4472 nm. SEM results showed the surface morphology of zinc oxide such as rod-like.

An Introduction to Atomic Layer Deposition with Thermal Applications

NASA Technical Reports Server (NTRS)

Dwivedi, Vivek H.

2015-01-01

Atomic Layer Deposition (ALD) is a cost effective nano-manufacturing technique that allows for the conformal coating of substrates with atomic control in a benign temperature and pressure environment. Through the introduction of paired precursor gases thin films can be deposited on a myriad of substrates ranging from glass, polymers, aerogels, and metals to high aspect ratio geometries. This talk will focus on the utilization of ALD for engineering applications.

Jet fuel instability mechanisms

NASA Technical Reports Server (NTRS)

Daniel, S. R.

1985-01-01

The mechanisms of the formation of fuel-insoluble deposits were studied in several real fuels and in a model fuel consisting of tetralin in dodecane solution. The influence of addition to the fuels of small concentrations of various compounds on the quantities of deposits formed and on the formation and disappearance of oxygenated species in solution was assessed. The effect of temperature on deposit formation was also investigated over the range of 308-453 K.

Synthesis and Physical Properties Characterization of CdSe1-ySy Nanolayers Deposited by Chemical Bath Deposition at Low-Temperature Treatment

NASA Astrophysics Data System (ADS)

Flores-Mena, J. E.; Contreras-Rascón, J. I.; Diaz-Reyes, J.; Castillo-Ojeda, R. S.

In this work, we present the synthesis and structural and optical characterizations of CdSe1-y S y deposited by chemical bath deposition (CBD) technique on corning glass at a temperature of 20 ± 2 °C. The sulfur molar fraction was varied from 0 to 42.13 %, which was realized by varying the thiourea volume added to the growth solution in the range from 0 to 30 mL. The chemical stoichiometry was estimated by energy dispersive spectrometry (EDS). The CdSe1-y S y showed hexagonal wurtzite crystalline phase that was found by X-ray diffraction (XRD) analysis and Raman spectroscopy. The average grain size range of the films was 1.48-1.68 nm that was determined using the Debye-Scherrer equation W(002) direction and was confirmed by high-resolution transmission electron microscopy (HRTEM). Raman scattering shows that the lattice dynamics is characteristic of bimodal behavior and the multipeaks adjust to the first optical longitudinal mode for the CdSeS, in all cases, Raman spectra show two dominant vibrational bands about 208 and 415 cm-1 associated at CdSe-1LO-like and CdSe-2LO-like. CdSe1-y S y band gap energy can be varied from 1.86 to 2.16 eV by varying the thiourea volume added in growth solution in the investigated range obtained by transmittance measurements at room temperature. The room temperature photoluminescence shows a dominant radiation band at about 3.0 eV that can be associated with exciton bonded to donor impurity and the quantum confinement because of the grain size is less than the Bohr radius.

Influence of load and temperature on tribological behaviour of electroless Ni-P deposits

NASA Astrophysics Data System (ADS)

Kundu, S.; Das, S. K.; Sahoo, P.

2016-09-01

Electroless Ni-P coatings have shown tremendous potential as tribology material at room temperature. However, the performance of the same in high temperature field needs to be evaluated as investigation reveals the softening of most of the coating materials. In the current study, both as-deposited as well as heat treated samples are developed for the performance evaluation. Coatings are tested under different loads with a constant speed and at temperatures ranging from room temperature (R.T.) to 500°C. Tribological tests are carried out on a pin-on- disc tribotester by selecting a wear track diameter of 60 mm for 5 minutes. Wear is reported in the form of wear rate by following Archard's equation. The microstructure characterization of the coating is performed using SEM (Scanning Electron Microscopy), EDX (Energy Dispersive X-Ray Analysis) and XRD (X-Ray Diffraction Analysis). Coating is developed with phosphorous weight percentages around 9% on cylindrical mild steel samples and the deposition thickness is observed to be around 50 μm. The as-deposited coating is found to be amorphous in nature and hardness of the as-deposited coating is found to be around 585HV01. Friction coefficient increases initially with the increase in temperature from room temperature up to 100°C but thereafter gradually decrease with the increase in temperature. Initial increase in temperature (up to 100°C) provides higher rate of wear compared to room temperature but with further increase it drops in most of the cases. Wear rate increases with the increase in temperature but as it crosses or nears the phase transformation temperature (around 340°C), the scenario gets reversed. From X-ray diffraction analysis, it is found that coating is amorphous in as-deposited condition but transforms into a crystalline structure with heat treatment.

Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

DOEpatents

Liu, David K.

1992-01-01

Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.

Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition.

PubMed

Kim, Y; Song, W; Lee, S Y; Jeon, C; Jung, W; Kim, M; Park, C-Y

2011-06-27

Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 Ω∕sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.

Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C.; Jung, W.; Kim, M.; Park, C.-Y.

2011-06-01

Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 Ω/sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.

Fabrication and characterization of Ga-doped ZnO / Si heterojunction nanodiodes

NASA Astrophysics Data System (ADS)

Akgul, Guvenc; Akgul, Funda Aksoy

2017-02-01

In this study, temperature-dependent electrical properties of n-type Ga-doped ZnO thin film / p-type Si nanowire heterojunction diodes were reported. Metal-assisted chemical etching (MACE) process was performed to fabricate Si nanowires. Ga-doped ZnO films were then deposited onto nanowires through chemical bath deposition (CBD) technique to build three-dimensional nanowire-based heterojunction diodes. Fabricated devices revealed significant diode characteristics in the temperature range of 220 - 360 K. Electrical measurements shown that diodes had a well-defined rectifying behavior with a good rectification ratio of 103 ±3 V at room temperature. Ideality factor (n) were changed from 2.2 to 1.2 with increasing temperature.

The effect of Substrate temperature on physical and electrical properties of DC magnetron sputtered (Ta2O5)0.85(TiO2)0.15 films

NASA Astrophysics Data System (ADS)

Sekhar, M. Chandra; Uthanna, S.; Martins, R.; Jagadeesh Chandra, S. V.; Elangovan, E.

2012-04-01

Thin films of (Ta2O5)0.85(TiO2)0.15 were deposited on quartz and p-Si substrates by DC reactive magnetron sputtering at different substrate temperatures (Ts) in the range 303 - 873 K. The films deposited at 303 0K were in the amorphous and it transformed to crystalline at substrate temperatures >= 573 0K. The crystallite size was increased from 50 nm to 72 nm with the increase of substrate temperature. The surface morphology was significantly influenced with the substrate temperature. After deposition of the (Ta2O5)0.85(TiO2)0.15 films on Si, aluminium (Al) electrode was deposited to fabricate metal/oxide/semiconductor (MOS) capacitors with a configuration of Al/(Ta2O5)0.85(TiO2)0.15/Si. A low leakage current of 7.7 × 10-5 A/cm2 was obtained from the films deposited at 303 K. The leakage current was decreased to 9.3 × 10-8 A/cm2 with the increase of substrate temperature owing to structural changes. The conduction mechanism of the Al/(Ta2O5)0.85(TiO2)0.15/Si capacitors was analyzed and compared with mechanisms of Poole-Frenkel and Schottky emissions. The optical band gap (Eg) was decreased from 4.45 eV to 4.38 eV with the increase in substrate temperature.

Synthesis and characterization of LPCVD SiC films using novel precursors

NASA Astrophysics Data System (ADS)

Bhaskaran, Mahalingam

A unique low pressure chemical vapor deposition (LPCVD) process has been developed to synthesize amorphous and crystalline SiC films using environmentally benign chemicals. The interrelationships governing the process variables, compositions and select properties of the resulting films were established. Such films can be used to produce high quality mask membrane for x-ray lithography. These films can also be used in fabricating high power electrical devices, and hetrojunction devices in conjunction with silicon. Amorphous SiC films were synthesized using a single precursor, ditertiarybutylsilane, at temperatures below 850sp°C. Compositional analysis performed on these deposits revealed that, in the deposition temperature range of 625 to 750sp°C, the composition of the deposits changed progressively from slightly silicon rich (55% Si) to slightly carbon rich (51%C). Above 750sp°C, there was a rapid increase in the carbon content from the near stoichiometric value to about 75%-C at 850sp°C. The stoichiometric films exhibited high stress values of 700 ± 50 MPa. Attempts to reduce the stress values resulted in films with excess carbon content of about 60%-C. From the high frequency C-V characterization, the dielectric constant for these films was estimated to be 10.1 ± 0.5. Temperature bias stressing studies revealed a trapped charge density of 0.869× 10sp7 cIsp{-2} within the bulk. Crystalline silicon carbide films were grown on silicon substrates using dichlorosilane and acetylene as precursors, in the temperature range of 950sp°C to 1050sp°C. The carbon content in the film was found to be increasing with the deposition temperature, when the flow ratio of precursors was one. The carbon composition was also found to be sharply dependent on acetylene flow, for constant deposition temperature and pressure. Stoichiometric films were achieved for dichlorosilane to acetylene flow ratio of 4:1. X-ray diffraction studies confirmed the growth of beta-SiC with $$ orientation in all the cases. The voltage-current relationship for Si-film-metal structure showed a diode behavior with an ideality factor of 4.03 in the diffusion current dominating regime.

Method of depositing wide bandgap amorphous semiconductor materials

DOEpatents

Ellis, Jr., Frank B.; Delahoy, Alan E.

1987-09-29

A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

Fe/Si(001) Ferromagnetic Layers: Reactivity, Local Atomic Structure and Magnetism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lungu, G. A.; Costescu, R. M.; Husanu, M. A.

2011-10-03

Ultrathin ferromagnetic Fe layers on Si(001) have recently been synthesized using the molecular beam epitaxy (MBE) technique, and their structural and magnetic properties, as well as their interface reactivity have been investigated. The study was undertaken as function of the amount of Fe deposited and of substrate temperature. The interface reactivity was characterized by Auger electron spectroscopy (AES). The surface structure was characterized by low-energy electron diffraction (LEED). The magnetism was investigated by magneto-optical Kerr effect (MOKE). A higher deposition temperature stabilizes a better surface ordering, but it also enhances Fe and Si interdiffusion and it therefore decreases the magnetism.more » Despite the rapid disappearance of the long range order with Fe deposition at room temperature, the material exhibits a significant uniaxial in-plane magnetic anisotropy. For the Fe deposition performed at high temperature (500 deg. C), a weak ferromagnetism is still observed, with saturation magnetization of about 10% of the value obtained previously. MOKE studies allowed inferring the main properties of the distinct formed layers.« less

Grain boundary dominated electrical conductivity in ultrananocrystalline diamond

NASA Astrophysics Data System (ADS)

Wiora, Neda; Mertens, Michael; Brühne, Kai; Fecht, Hans-Jörg; Tran, Ich C.; Willey, Trevor; van Buuren, Anthony; Biener, Jürgen; Lee, Jun-Sik

2017-10-01

N-type electrically conductive ultrananocrystalline diamond (UNCD) films were deposited using the hot filament chemical vapor deposition technique with a gas mixture of H2, CH4 and NH3. Depending on the deposition temperature and ammonia feed gas concentration, which serves as a nitrogen source, room temperature electrical conductivities in the order of 10-2 to 5 × 101 S/cm and activation energies in the meV range were achieved. In order to understand the origin of the enhanced electrical conductivity and clarify the role of ammonia addition to the process gas, a set of UNCD films was grown by systematically varying the ammonia gas phase concentration. These samples were analyzed with respect to their morphology and electrical properties as well as their carbon and nitrogen bonding environments. Temperature dependent electrical conductivity measurements (300-1200 K) show that the electrical conductivity of the samples increases with temperature. The near edge x-ray absorption fine structure measurements reveal that the electrical conductivity of the UNCD films does not correlate directly with ammonia addition, but depends on the total amount of sp2 bonded carbon in the deposited films.

Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Kukli, Kaupo; Ritala, Mikko; Aarik, Jaan; Uustare, Teet; Leskela, Markku

2002-08-01

ZrO2 films were grown by atomic layer deposition from ZrCl4 and H2O or a mixture of H2O and H2O2 on Si(100) substrates in the temperature range of 180-600 degC. The films were evaluated in the as-deposited state, in order to follow the effect of deposition temperature on the film quality. The rate of crystal growth increased and the content of residual impurities decreased with increasing temperature. The zirconium-to-oxygen atomic ratio, determined by ion-beam analysis, corresponded to the stoichiometric dioxide regardless of the growth temperature. The effective permittivity of ZrO2 in Al/ZrO2/Si capacitor structures increased from 13-15 in the films grown at 180 degC to 19 in the films grown at 300-600 degC, measured at 100 kHz. The permittivity was relatively high in the crystallized films, compared to the amorphous ones, but rather insensitive to the crystal structure. The permittivity was higher in the films grown using water. The leakage current density tended to be lower and the breakdown field higher in the films grown using hydrogen peroxide.

In situ spectroscopic ellipsometry study of low-temperature epitaxial silicon growth

NASA Astrophysics Data System (ADS)

Halagačka, L.; Foldyna, M.; Leal, R.; Roca i Cabarrocas, P.

2018-07-01

Low-temperature growth of doped epitaxial silicon layers is a promising way to reduce the cost of p-n junction formation in c-Si solar cells. In this work, we study process of highly doped epitaxial silicon layer growth using in situ spectroscopic ellipsometry. The film was deposited by plasma-enhanced chemical vapor deposition (PECVD) on a crystalline silicon substrate at a low substrate temperature of 200 °C. In the deposition process, SiF4 was used as a precursor, B2H6 as doping gas, and a hydrogen/argon mixture as carrier gas. A spectroscopic ellipsometer with a wide spectral range was used for in situ spectroscopic measurements. Since the temperature during process is 200 °C, the optical functions of silicon differ from these at room temperature and have to be adjusted. Thickness of the epitaxial silicon layer was fitted on in situ ellipsometric data. As a result we were able to determine the dynamics of epitaxial layer growth, namely initial layer formation time and epitaxial growth rate. This study opens new perspectives in understanding and monitoring the epitaxial silicon deposition processes as the model fitting can be applied directly during the growth.

The Effects of Experimental Conditions on the Refractive Index and Density of Low-Temperature Ices: Solid Carbon Dioxide

NASA Technical Reports Server (NTRS)

Loeffler, M. J.; Moore, M. H.; Gerakines, P. A.

2016-01-01

We present the first study on the effects of the deposition technique on the measurements of the visible refractive index and the density of a low-temperature ice using solid carbon dioxide (CO2) at 14-70 K as an example. While our measurements generally agree with previous studies that show a dependence of index and density on temperature below 50 K, we also find that the measured values depend on the method used to create each sample. Below 50 K, we find that the refractive index varied by as much as 4% and the density by as much as 16% at a single temperature depending on the deposition method. We also show that the Lorentz-Lorenz approximation is valid for solid CO2 across the full 14-70 K temperature range, regardless of the deposition method used. Since the refractive index and density are important in calculations of optical constants and infrared (IR) band strengths of materials, our results suggest that the deposition method must be considered in cases where nvis and ? are not measured in the same experimental setup where the IR spectral measurements are made.

Vapor-Deposited Glasses with Long-Range Columnar Liquid Crystalline Order

DOE PAGES

Gujral, Ankit; Gomez, Jaritza; Ruan, Shigang; ...

2017-10-04

Anisotropic molecular packing, particularly in highly ordered liquid crystalline arrangements, has the potential for optimizing performance in organic electronic and optoelectronic applications. Here we show that physical vapor deposition can be used to prepare highly organized glassy solids of discotic liquid crystalline systems. Using grazing incidence X-ray scattering, atomic force microscopy, and UV–vis spectroscopy, we compare three systems: a rectangular columnar liquid crystal, a hexagonal columnar liquid crystal, and a nonmesogen. The packing motifs accessible by vapor deposition are highly organized for the liquid crystalline systems with columns propagating either in-plane or out-of-plane depending upon the substrate temperature during deposition.more » As a result, the structures formed at a given substrate temperature can be understood as resulting from partial equilibration toward the structure of the equilibrium liquid crystal surface during the deposition process.« less

Vapor-Deposited Glasses with Long-Range Columnar Liquid Crystalline Order

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gujral, Ankit; Gomez, Jaritza; Ruan, Shigang

Anisotropic molecular packing, particularly in highly ordered liquid crystalline arrangements, has the potential for optimizing performance in organic electronic and optoelectronic applications. Here we show that physical vapor deposition can be used to prepare highly organized glassy solids of discotic liquid crystalline systems. Using grazing incidence X-ray scattering, atomic force microscopy, and UV–vis spectroscopy, we compare three systems: a rectangular columnar liquid crystal, a hexagonal columnar liquid crystal, and a nonmesogen. The packing motifs accessible by vapor deposition are highly organized for the liquid crystalline systems with columns propagating either in-plane or out-of-plane depending upon the substrate temperature during deposition.more » As a result, the structures formed at a given substrate temperature can be understood as resulting from partial equilibration toward the structure of the equilibrium liquid crystal surface during the deposition process.« less

Cadmium sulfide thin films growth by chemical bath deposition

NASA Astrophysics Data System (ADS)

Hariech, S.; Aida, M. S.; Bougdira, J.; Belmahi, M.; Medjahdi, G.; Genève, D.; Attaf, N.; Rinnert, H.

2018-03-01

Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD). A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties. The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution. The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between 55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.

Atomic layer deposition of molybdenum oxide from (N{sup t}Bu){sub 2}(NMe{sub 2}){sub 2}Mo and O{sub 2} plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vos, Martijn F. J.; Macco, Bart; Thissen, Nick F. W.

2016-01-15

Molybdenum oxide (MoO{sub x}) films have been deposited by atomic layer deposition using bis(tert-butylimido)-bis(dimethylamido)molybdenum and oxygen plasma, within a temperature range of 50–350 °C. Amorphous film growth was observed between 50 and 200 °C at a growth per cycle (GPC) around 0.80 Å. For deposition temperatures of 250 °C and higher, a transition to polycrystalline growth was observed, accompanied by an increase in GPC up to 1.88 Å. For all deposition temperatures the O/Mo ratio was found to be just below three, indicating the films were slightly substoichiometric with respect to MoO{sub 3} and contained oxygen vacancies. The high purity of the films was demonstratedmore » in the absence of detectable C and N contamination in Rutherford backscattering measurements, and a H content varying between 3 and 11 at. % measured with elastic recoil detection. In addition to the chemical composition, the optical properties are reported as well.« less

Effect of elevated substrate temperature deposition on the mechanical losses in tantala thin film coatings

NASA Astrophysics Data System (ADS)

Vajente, G.; Birney, R.; Ananyeva, A.; Angelova, S.; Asselin, R.; Baloukas, B.; Bassiri, R.; Billingsley, G.; Fejer, M. M.; Gibson, D.; Godbout, L. J.; Gustafson, E.; Heptonstall, A.; Hough, J.; MacFoy, S.; Markosyan, A.; Martin, I. W.; Martinu, L.; Murray, P. G.; Penn, S.; Roorda, S.; Rowan, S.; Schiettekatte, F.; Shink, R.; Torrie, C.; Vine, D.; Reid, S.; Adhikari, R. X.

2018-04-01

Brownian thermal noise in dielectric multilayer coatings limits the sensitivity of current and future interferometric gravitational wave detectors. In this work we explore the possibility of improving the mechanical losses of tantala, often used as the high refractive index material, by depositing it on a substrate held at elevated temperature. Promising results have been previously obtained with this technique when applied to amorphous silicon. We show that depositing tantala on a hot substrate reduced the mechanical losses of the as-deposited coating, but subsequent thermal treatments had a larger impact, as they reduced the losses to levels previously reported in the literature. We also show that the reduction in mechanical loss correlates with increased medium range order in the atomic structure of the coatings using x-ray diffraction and Raman spectroscopy. Finally, a discussion is included on our results, which shows that the elevated temperature deposition of pure tantala coatings does not appear to reduce mechanical loss in a similar way to that reported in the literature for amorphous silicon; and we suggest possible future research directions.

Characterization of bismuth selenide (Bi2Se3) thin films obtained by evaporating the hydrothermally synthesised nano-particles

NASA Astrophysics Data System (ADS)

Indirajith, R.; Rajalakshmi, M.; Gopalakrishnan, R.; Ramamurthi, K.

2016-03-01

Bismuth selenide (Bi2Se3) was synthesized by hydrothermal method at 200 °C and confirmed by powder X-ray diffraction (XRD) studies. The synthesized material was utilized to deposit bismuth selenide thin films at various substrate temperatures (Room Temperature-RT, 150 °C, 250 °C, 350 °C and 450 °C) by electron beam evaporation technique. XRD study confirmed the polycrystalline nature of the deposited Bi2Se3films. Optical transmittance spectra showed that the deposited (at RT) films acquire relatively high average transmittance of 60%in near infrared region (1500-2500 nm). An indirect allowed optical band gap calculated from the absorption edge for the deposited films is ranging from 0.62 to 0.8 eV. Scanning electron and atomic force microscopy analyses reveal the formation of nano-scale sized particles on the surface and that the nature of surface microstructures is influenced by the substrate temperature. Hall measurements showed improved electrical properties, for the films deposited at 350 °C which possess 2.8 times the mobility and 0.9 times the resistivity of the films deposited at RT.

Negative effects of temperature and atmospheric depositions on the seed viability of common juniper (Juniperus communis).

PubMed

Gruwez, R; De Frenne, P; De Schrijver, A; Leroux, O; Vangansbeke, P; Verheyen, K

2014-02-01

Environmental change is increasingly impacting ecosystems worldwide. However, our knowledge about the interacting effects of various drivers of global change on sexual reproduction of plants, one of their key mechanisms to cope with change, is limited. This study examines populations of poorly regenerating and threatened common juniper (Juniperus communis) to determine the influence of four drivers of global change (rising temperatures, nitrogen deposition, potentially acidifying deposition and altering precipitation patterns) on two key developmental phases during sexual reproduction, gametogenesis and fertilization (seed phase two, SP2) and embryo development (seed phase three, SP3), and on the ripening time of seeds. In 42 populations throughout the distribution range of common juniper in Europe, 11,943 seeds of two developmental phases were sampled. Seed viability was determined using seed dissection and related to accumulated temperature (expressed as growing degree-days), nitrogen and potentially acidifying deposition (nitrogen plus sulfur), and precipitation data. Precipitation had no influence on the viability of the seeds or on the ripening time. Increasing temperatures had a negative impact on the viability of SP2 and SP3 seeds and decreased the ripening time. Potentially acidifying depositions negatively influenced SP3 seed viability, while enhanced nitrogen deposition led to lower ripening times. Higher temperatures and atmospheric deposition affected SP3 seeds more than SP2 seeds. However, this is possibly a delayed effect as juniper seeds develop practically independently, due to the absence of vascular communication with the parent plant from shortly after fertilization. It is proposed that the failure of natural regeneration in many European juniper populations might be attributed to climate warming as well as enhanced atmospheric deposition of nitrogen and sulfur.

Negative effects of temperature and atmospheric depositions on the seed viability of common juniper (Juniperus communis)

PubMed Central

Gruwez, R.; De Frenne, P.; De Schrijver, A.; Leroux, O.; Vangansbeke, P.; Verheyen, K.

2014-01-01

Background and Aims Environmental change is increasingly impacting ecosystems worldwide. However, our knowledge about the interacting effects of various drivers of global change on sexual reproduction of plants, one of their key mechanisms to cope with change, is limited. This study examines populations of poorly regenerating and threatened common juniper (Juniperus communis) to determine the influence of four drivers of global change (rising temperatures, nitrogen deposition, potentially acidifying deposition and altering precipitation patterns) on two key developmental phases during sexual reproduction, gametogenesis and fertilization (seed phase two, SP2) and embryo development (seed phase three, SP3), and on the ripening time of seeds. Methods In 42 populations throughout the distribution range of common juniper in Europe, 11 943 seeds of two developmental phases were sampled. Seed viability was determined using seed dissection and related to accumulated temperature (expressed as growing degree-days), nitrogen and potentially acidifying deposition (nitrogen plus sulfur), and precipitation data. Key Results Precipitation had no influence on the viability of the seeds or on the ripening time. Increasing temperatures had a negative impact on the viability of SP2 and SP3 seeds and decreased the ripening time. Potentially acidifying depositions negatively influenced SP3 seed viability, while enhanced nitrogen deposition led to lower ripening times. Conclusions Higher temperatures and atmospheric deposition affected SP3 seeds more than SP2 seeds. However, this is possibly a delayed effect as juniper seeds develop practically independently, due to the absence of vascular communication with the parent plant from shortly after fertilization. It is proposed that the failure of natural regeneration in many European juniper populations might be attributed to climate warming as well as enhanced atmospheric deposition of nitrogen and sulfur. PMID:24284814

Estimation of Initial and Response Times of Laser Dew-Point Hygrometer by Measurement Simulation

NASA Astrophysics Data System (ADS)

Matsumoto, Sigeaki; Toyooka, Satoru

1995-10-01

The initial and the response times of the laser dew-point hygrometer were evaluated by measurement simulation. The simulation was based on loop computations of the surface temperature of a plate with dew deposition, the quantity of dew deposited and the intensity of scattered light from the surface at each short interval of measurement. The initial time was defined as the time necessary for the hygrometer to reach a temperature within ±0.5° C of the measured dew point from the start time of measurement, and the response time was also defined for stepwise dew-point changes of +5° C and -5° C. The simulation results are in approximate agreement with the recorded temperature and intensity of scattered light of the hygrometer. The evaluated initial time ranged from 0.3 min to 5 min in the temperature range from 0° C to 60° C, and the response time was also evaluated to be from 0.2 min to 3 min.

Shape-memory alloy micro-actuator

NASA Technical Reports Server (NTRS)

Busch, John D. (Inventor); Johnson, Alfred D. (Inventor)

1991-01-01

A method of producing an integral piece of thermo-sensitive material, which is responsive to a shift in temperature from below to above a phase transformation temperature range to alter the material's condition to a shape-memory condition and move from one position to another. The method is characterized by depositing a thin film of shape-memory material, such as Nickel titanium (Ni-Ti) onto a substrate by vacuum deposition process such that the alloy exhibits an amorphous non-crystalline structure. The coated substrate is then annealed in a vacuum or in the presence of an inert atmosphere at a selected temperature, time and cool down rate to produce an ordered, partially disordered or fully disordered BCC structure such that the alloy undergoes thermoelastic, martinsetic phase transformation in response to alteration in temperature to pass from a martinsetic phase when at a temperature below a phase transformation range and capable of a high level of recoverable strain to a parent austenitic phase in a memory shape when at a temperature above the phase transformation range. Also disclosed are actuator devices employing shape-memory material actuators that deform from a set shape toward an original shape when subjected to a critical temperature level after having been initially deformed from the original shape into the set shape while at a lower temperature. The actuators are mechanically coupled to one or more movable elements such that the temperature-induce deformation of the actuators exerts a force or generates a motion of the mechanical element(s).

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Khan, M. A.; Skogman, R. A.; van Hove, J. M.; Olson, D. T.; Kuznia, J. N.

1992-03-01

In this letter the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates is reported. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. As best as is known this is the first report of insulating GaN films which show excellent band-edge photoluminescence.

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Asif Khan, M.; Skogman, R. A.; Van Hove, J. M.; Olson, D. T.; Kuznia, J. N.

1992-03-01

In this letter we report the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 °C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 °C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. To the best of our knowledge this is the first report of insulating GaN films which show excellent band-edge photoluminescence.

The activation energy for nanocrystalline diamond films deposited from an Ar/H2/CH4 hot-filament reactor.

PubMed

Barbosa, D C; Melo, L L; Trava-Airoldi, V J; Corat, E J

2009-06-01

In this work we have investigated the effect of substrate temperature on the growth rate and properties of nanocrystalline diamond thin films deposited by hot filament chemical vapor deposition (HFCVD). Mixtures of 0.5 vol% CH4 and 25 vol% H2 balanced with Ar at a pressure of 50 Torr and typical deposition time of 12 h. We present the measurement of the activation energy by accurately controlling the substrate temperature independently of other CVD parameters. Growth rates have been measured in the temperature range from 550 to 800 degrees C. Characterization techniques have involved Raman spectroscopy, high resolution X-ray difractometry and scanning electron microscopy. We also present a comparison with most activation energy for micro and nanocrystalline diamond determinations in the literature and propose that there is a common trend in most observations. The result obtained can be an evidence that the growth mechanism of NCD in HFCVD reactors is very similar to MCD growth.

Modified lead titanate thin films for pyroelectric infrared detectors on gold electrodes

NASA Astrophysics Data System (ADS)

Ahmed, Moinuddin; Butler, Donald P.

2015-07-01

Pyroelectric infrared detectors provide the advantage of both a wide spectral response and dynamic range, which also has enabled systems to be developed with reduced size, weight and power consumption. This paper demonstrates the deposition of lead zirconium titanate (PZT) and lead calcium titanate (PCT) thin films for uncooled pyroelectric detectors with the utilization of gold electrodes. The modified lead titanate thin films were deposited by pulsed laser deposition on gold electrodes. The PZT and PCT thins films deposited and annealed at temperatures of 650 °C and 550 °C respectively demonstrated the best pyroelectric performance in this work. The thin films displayed a pyroelectric effect that increased with temperature. Poling of the thin films was carried out for a fixed time periods and fixed dc bias voltages at elevated temperature in order to increase the pyroelectric coefficient by establishing a spontaneous polarization of the thin films. Poling caused the pyroelectric current to increase one order of magnitude.

The impact of drought on ozone dry deposition over eastern Texas

NASA Astrophysics Data System (ADS)

Huang, Ling; McDonald-Buller, Elena C.; McGaughey, Gary; Kimura, Yosuke; Allen, David T.

2016-02-01

Dry deposition represents a critical pathway through which ground-level ozone is removed from the atmosphere. Understanding the effects of drought on ozone dry deposition is essential for air quality modeling and management in regions of the world with recurring droughts. This work applied the widely used Zhang dry deposition algorithm to examine seasonal and interannual changes in estimated ozone dry deposition velocities and component resistances/conductances over eastern Texas during years with drought (2006 and 2011) as well as a year with slightly cooler temperatures and above average rainfall (2007). Simulated area-averaged daytime ozone dry deposition velocities ranged between 0.26 and 0.47 cm/s. Seasonal patterns reflected the combined seasonal variations in non-stomatal and stomatal deposition pathways. Daytime ozone dry deposition velocities during the growing season were consistently larger during 2007 compared to 2006 and 2011. These differences were associated with differences in stomatal conductances and were most pronounced in forested areas. Reductions in stomatal conductances under drought conditions were highly sensitive to increases in vapor pressure deficit and warmer temperatures in Zhang's algorithm. Reductions in daytime ozone deposition velocities and deposition mass during drought years were associated with estimates of higher surface ozone concentrations.

Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers.

PubMed

Andringa, Anne-Marije; Perrotta, Alberto; de Peuter, Koen; Knoops, Harm C M; Kessels, Wilhelmus M M; Creatore, Mariadriana

2015-10-14

Encapsulation of organic (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells, and field-effect transistors, is required to minimize device degradation induced by moisture and oxygen ingress. SiNx moisture permeation barriers have been fabricated using a very recently developed low-temperature plasma-assisted atomic layer deposition (ALD) approach, consisting of half-reactions of the substrate with the precursor SiH2(NH(t)Bu)2 and with N2-fed plasma. The deposited films have been characterized in terms of their refractive index and chemical composition by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier-transform infrared spectroscopy (FTIR). The SiNx thin-film refractive index ranges from 1.80 to 1.90 for films deposited at 80 °C up to 200 °C, respectively, and the C, O, and H impurity levels decrease when the deposition temperature increases. The relative open porosity content of the layers has been studied by means of multisolvent ellipsometric porosimetry (EP), adopting three solvents with different kinetic diameters: water (∼0.3 nm), ethanol (∼0.4 nm), and toluene (∼0.6 nm). Irrespective of the deposition temperature, and hence the impurity content in the SiNx films, no uptake of any adsorptive has been observed, pointing to the absence of open pores larger than 0.3 nm in diameter. Instead, multilayer development has been observed, leading to type II isotherms that, according to the IUPAC classification, are characteristic of nonporous layers. The calcium test has been performed in a climate chamber at 20 °C and 50% relative humidity to determine the intrinsic water vapor transmission rate (WVTR) of SiNx barriers deposited at 120 °C. Intrinsic WVTR values in the range of 10(-6) g/m2/day indicate excellent barrier properties for ALD SiNx layers as thin as 10 nm, competing with that of state-of-the-art plasma-enhanced chemical vapor-deposited SiNx layers of a few hundred nanometers in thickness.

Novel carbon-rich additives preparation by degradative solvent extraction of biomass wastes for coke-making.

PubMed

Zhu, Xianqing; Li, Xian; Xiao, Li; Zhang, Xiaoyong; Tong, Shan; Wu, Chao; Ashida, Ryuichi; Liu, Wenqiang; Miura, Kouichi; Yao, Hong

2016-05-01

In this work, two extracts (Soluble and Deposit) were produced by degradative solvent extraction of biomass wastes from 250 to 350°C. The feasibilities of using Soluble and Deposit as additives for coke-making were investigated for the first time. The Soluble and Deposit, having significantly higher carbon content, lower oxygen content and extremely lower ash content than raw biomasses. All Solubles and most of Deposits can melt completely at the temperature ranged from 80 to 120°C and 140 to 180°C, respectively. The additions of Soluble or Deposit into the coke-making coal significantly improved their thermoplastic properties with as high as 9°C increase of the plastic range. Furthermore, the addition of Deposit or Soluble also markedly enhanced the coke quality through increasing coke strength after reaction (CSR) and reducing coke reactivity index (CRI). Therefore, the Soluble and Deposit were proved to be good additives for coke-making. Copyright © 2016 Elsevier Ltd. All rights reserved.

Influence of Molecular Shape on the Thermal Stability and Molecular Orientation of Vapor-Deposited Organic Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walters, Diane M; Antony, Lucas; de Pablo, Juan

High thermal stability and anisotropic molecular orientation enhance the performance of vapor-deposited organic semiconductors, but controlling these properties is a challenge in amorphous materials. To understand the influence of molecular shape on these properties, vapor-deposited glasses of three disk-shaped molecules were prepared. For all three systems, enhanced thermal stability is observed for glasses prepared over a wide range of substrate temperatures and anisotropic molecular orientation is observed at lower substrate temperatures. For two of the disk-shaped molecules, atomistic simulations of thin films were also performed and anisotropic molecular orientation was observed at the equilibrium liquid surface. We find that themore » structure and thermal stability of these vapor-deposited glasses results from high surface mobility and partial equilibration toward the structure of the equilibrium liquid surface during the deposition process. For the three molecules studied, molecular shape is a dominant factor in determining the anisotropy of vapor-deposited glasses.« less

Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

DOEpatents

Liu, D.K.

1992-12-15

Method and apparatus are described for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure. 7 figs.

Paleomagnetic evidence for high-temperature emplacement of the 1883 subaqueous pyroclastic flows from Krakatau Volcano, Indonesia

NASA Astrophysics Data System (ADS)

Mandeville, Charles W.; Carey, Steven; Sigurdsson, Haraldur; King, John

1994-05-01

The paroxysmal 1883 eruption of Krakatau volcano in Indonesia discharge at least 6.5 cu km (dense rock equivalent) of pyroclastic material into the shallow waters of the Sunda Straits within a 15-km radius of the volcano. Progressive thermal demagnetization studies of individually oriented pumice clasts from a core sample of the submarine pyroclastic deposits show that 41 out of 47 clasts exhibit single-component remanence with mean inclination of -24 deg. The partial thermoremanent magnetization components of both pumice and lithic clasts are well grouped in orientation, indicating that substantial cooling of clasts must have occurred following deposition. Estimated subaqueous emplacement temperature for such clasts is greater than 500 C. Rare two-component lithic fragments exhibit inflection points on vector endpoint diagrams that mark the temperature below which the fragments acquired magnetization of similar orientation. These inflection points range from 350 to 550 C, indicating a minimum subaqueous emplacement temperature of 350 C. Paleomagnetic evidence for high-emplacement temperature supports the hypothesis that proximal 1883 submarine pyroclastic deposits resulted from entrance of hot, subaerially generated pyroclastic flows into the sea. Similar deposits have been interpreted from the geologic record, but this is the first documented example of submarine pyroclastic flows from a historic eruption. The Kratatau deposits thus serve as an important modern analog for the study of pyroclastic flow/seawater interactions.

Fabrication of electrically bistable organic semiconducting/ferroelectric blend films by temperature controlled spin coating.

PubMed

Hu, Jinghang; Zhang, Jianchi; Fu, Zongyuan; Weng, Junhui; Chen, Weibo; Ding, Shijin; Jiang, Yulong; Zhu, Guodong

2015-03-25

Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. During film deposition from the blend solution, spinodal decomposition induced phase separation, resulting in discrete semiconducting phase whose electrical property could be modulated by the continuous ferroelectric phase. However, blend films processed by common spin coating method showed extremely rough surfaces, even comparable to the film thickness, which caused large electrical leakage and thus compromised the resistive switching performance. To improve film roughness and thus increase the productivity of these resistive devices, we developed temperature controlled spin coating technique to carefully adjust the phase separation process. Here we reported our experimental results from the blend films of ferroelectric poly(vinylidene fluoride-trifluoroethylene (P(VDF-TrFE)) and semiconducting poly(3-hexylthiophene) (P3HT). We conducted a series of experiments at various deposition temperatures ranging from 20 to 90 °C. The resulting films were characterized by AFM, SEM, and VPFM to determine their structure and roughness. Film roughness first decreased and then increased with the increase of deposition temperature. Electrical performance was also characterized and obviously improved insulating property was obtained from the films deposited between 50 and 70 °C. By temperature control during film deposition, it is convenient to efficiently fabricate ferroelectric/semiconducting blend films with good electrical bistability.

Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patella, F.; Arciprete, F.; Fanfoni, M.

2006-04-17

We studied the temperature dependence of the two-dimensional to three-dimensional growth transition in InAs/GaAs(001) heteroepitaxy by means of reflection high energy electron diffraction and atomic force microscopy. The observed shift of the transition to higher InAs deposition times, at temperatures above 500 deg. C, is not a change of critical thickness for islanding, which instead, is constant in the 450-560 deg. C range. Consequently, In-Ga intermixing and surface and interface strain have a negligible dependence on temperature in this range.

High temperature surface protection. [10 gas turbines

NASA Technical Reports Server (NTRS)

Levine, S. R.

1978-01-01

Alloys of the MCrAlX type are the basis for high temperature surface protection systems in gas turbines. M can be one or more of Ni, Co, or Fe and X denotes a reactive metal added to enhance oxide scale adherence. The selection and formation as well as the oxidation, hot corrosion and thermal fatigue performance of MCrAlX coatings are discussed. Coatings covered range from simple aluminides formed by pack cementation to the more advanced physical vapor deposition overlay coatings and developmental plasma spray deposited thermal barrier coatings.

Effect of rapid thermal annealing on the structural and electrical properties of RF sputtered CCTO thin film

NASA Astrophysics Data System (ADS)

Tripathy, N.; Das, K. C.; Ghosh, S. P.; Bose, G.; Kar, J. P.

2017-02-01

CaCu3Ti4O12 (CCTO) thin films have been deposited by RF magnetron sputtering on silicon substrates at room temperature. As-deposited thin films were subjected to rapid thermal annealing (RTA) at different temperatures ranging from 850°C to 1000°C. XRD and capacitance - voltage studies indicate that the structural and electrical properties of CCTO thin film strongly depend upon the annealing temperature. XRD pattern of CCTO thin film annealed at 950°C revealed the polycrystalline nature with evolutions of microstructures. Electrical properties of the dielectric films were investigated by fabricating Al/CCTO/Si metal oxide semiconductor structure. Electrical properties were found to be deteriorated with increasing in annealing temperature.

Controls on net carbon accumulation in North American peatlands: Insights from 210Pb dated cores

NASA Astrophysics Data System (ADS)

Wieder, R.; Scott, K. D.; Vile, M. A.; Vitt, D. H.; Burke-Scoll, M.

2012-12-01

Northern peatlands cover only 3-4 % of the Earth's land surface area, yet store hugh quantities (250-450 Pg) of carbon as peat. These peatlands generally are believed to function as net sinks for atmospheric CO2 today, with C fixation by net primary production at the peat surface exceeding C losses by organic matter mineralization throughout the peat column. Various aspects of peatland structure and function are influenced by a variety of factors, including local climatic conditions and atmospheric deposition of N and S. Here we examine continental-scale patterns in recent net C accumulation in peatlands across North America, combining the published data for eastern Canada from Moore et al. (2004, Global Change Biology) and Turunen et al. (2004, Global Biogeochemical Cycles) with our data from boreal sites in western Canada (Alberta) and from temperate sites in the U.S. Across these sites, mean annual, January, and July temperatures ranged from 0.6 to 9.1, -20.5 to -1.6, and 11.3 to 20.8 oC, respecticely, mean annual precipitation, rainfall, and snowfall ranged from 406 to 1480, 289 to 1156 and 112 to 415 mm, respectively, growing degree days (above 5 oC) ranged from 947 to 4467, and annual wet N and S deposition ranged from 0.9 to 8.1 and 0.4 to 13.4 kg/ha/yr. For 67 cores, net C accumulation in peat over the past 50 years was determined by 210Pb dating and ranged from 492 to 1781 kg/ha/yr. Net C accumulation (kg/ha/yr) was positively correlated with mean annual precipitation (p = 0.0129), mean annual snowfall (p = 0.0010) and wet deposition of both N (p < 0.0001) and S (p = 0.0003). However, both the climatic and wet deposition variables exhibit similar gradients across North America, and hence are coufounded. Stepwise regression revealed that 53% of the overall variation in net C accumulation could be explained by only two variables, wet N deposition (p < 0.0001; R2 = 0.35) and mean annual temperature (p = 0.0106; R2 = 0.07), with the regression model of net C accumulation (kg/ha/yr) = 913 + (950 x wet N deposition) - (46 x mean annual temperature). The effects of ongoing climate change, notably warming and changing regional patterns of atmospheric N deposition, may have ramifications for peatland carbon cycling.

Influence of laser irradiation on deposition characteristics of cold sprayed Stellite-6 coatings

NASA Astrophysics Data System (ADS)

Li, Bo; Jin, Yan; Yao, Jianhua; Li, Zhihong; Zhang, Qunli; Zhang, Xin

2018-03-01

Depositing hard materials such as Stellite-6 solely by cold spray (CS) is challengeable due to limited ability of plastic deformation. In this study, the deposition of Stellite-6 powder was achieved by supersonic laser deposition (SLD) which combines CS with synchronous laser irradiation. The surface morphology, deposition efficiency, track shape of Stellite-6 coatings produced over a range of laser irradiation temperatures were examined so as to reveal the effects of varying laser energy inputting on the deposition process of high strength material. The microstructure, phase composition and wear/corrosion resistant properties of the as-deposited Stellite-6 coatings were also investigated. The experimental results demonstrate that the surface flatness and deposition efficiency increase with laser irradiation temperature due to the softening effect induced by laser heating. The as-deposited Stellite-6 tracks show asymmetric shapes which are influenced by the relative configuration of powder stream and laser beam. The SLD coatings can preserve the original microstructure and phase of the feedstock material due to relatively low laser energy inputting, which result in the superior wear/corrosion resistant properties as compared to the counterpart prepared by laser cladding.

Early colonization of thermal niches in a silica-depositing hot spring in central Tibet.

PubMed

Lau, C Y; Aitchison, J C; Pointing, S B

2008-03-01

Thermophilic microbial mats dominated by the anoxygenic phototroph Roseiflexus castenholzii commonly develop around sinter-depositing geysers in the Daggyai Tso geothermal field of central Tibet. In this study we used morphological and molecular genetic techniques to reveal a diverse pioneer biofilm community including both archaea and bacteria involved in early colonization of such thermal niches at temperatures ranging from 46 to 77 degrees C. Sinter precipitation and biomineralization were evident at all locations, but the latter was selective between taxa and most evident on filamentous cells. Evidence for possible indirect biosignatures from biofilms overwhelmed by sinter deposition was found. Succession to a mature community appeared to relate to the growth rate for key taxa outpacing that of silicification within an optimum temperature range of 54-61 degrees C. The thin surface layer of silicification-resistant cyanobacteria that developed on the surface of mature mats may play a role in preventing biomineralization of the susceptible R. castenholzii beneath within these communities.

Direct observation of small cluster mobility and ripening. [during annealing of metal films on amorphous substrates

NASA Technical Reports Server (NTRS)

Heinemann, K.; Poppa, H.

1975-01-01

Direct evidence is reported for the simultaneous occurrence of Ostwald ripening and short-distance cluster mobility during annealing of discontinuous metal films on clean amorphous substrates. The annealing characteristics of very thin particulate deposits of silver on amorphized clean surfaces of single crystalline thin graphite substrates were studied by in-situ transmission electron microscopy (TEM) under controlled environmental conditions (residual gas pressure of 10 to the minus 9th power torr) in the temperature range from 25 to 450 C. Sputter cleaning of the substrate surface, metal deposition, and annealing were monitored by TEM observation. Pseudostereographic presentation of micrographs in different annealing stages, the observation of the annealing behavior at cast shadow edges, and measurements with an electronic image analyzing system were employed to aid the visual perception and the analysis of changes in deposit structure recorded during annealing. Slow Ostwald ripening was found to occur in the entire temperature range, but the overriding surface transport mechanism was short-distance cluster mobility.

Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garlow, Joseph A.; Barrett, Lawrence K.; Wu, Lijun

Single-layer graphene has demonstrated remarkable electronic properties that are strongly influenced by interfacial bonding and break down for the lowest energy configuration of stacked graphene layers (AB Bernal). Multilayer graphene with relative rotations between carbon layers, known as turbostratic graphene, can effectively decouple the electronic states of adjacent layers, preserving properties similar to that of SLG. While the growth of AB Bernal graphene through chemical vapor deposition has been widely reported, we investigate the growth of turbostratic graphene on heteroepitaxial Ni(111) thin films utilizing physical vapor deposition. By varying the carbon deposition temperature between 800–1100°C, we report an increase inmore » the graphene quality concomitant with a transition in the size of uniform thickness graphene, ranging from nanocrystallites to thousands of square microns. Combination Raman modes of as-grown graphene within the frequency range of 1650 cm ₋1 to 2300 cm ₋1, along with features of the Raman 2D mode, were employed as signatures of turbostratic graphene. Bilayer and multilayer graphene were directly identified from areas that exhibited Raman characteristics of turbostratic graphene using high-resolution TEM imaging. Lastly, Raman maps of the pertinent modes reveal large regions of turbostratic graphene on Ni(111) thin films at a deposition temperature of 1100°C.« less

Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition

DOE PAGES

Garlow, Joseph A.; Barrett, Lawrence K.; Wu, Lijun; ...

2016-01-29

Single-layer graphene has demonstrated remarkable electronic properties that are strongly influenced by interfacial bonding and break down for the lowest energy configuration of stacked graphene layers (AB Bernal). Multilayer graphene with relative rotations between carbon layers, known as turbostratic graphene, can effectively decouple the electronic states of adjacent layers, preserving properties similar to that of SLG. While the growth of AB Bernal graphene through chemical vapor deposition has been widely reported, we investigate the growth of turbostratic graphene on heteroepitaxial Ni(111) thin films utilizing physical vapor deposition. By varying the carbon deposition temperature between 800–1100°C, we report an increase inmore » the graphene quality concomitant with a transition in the size of uniform thickness graphene, ranging from nanocrystallites to thousands of square microns. Combination Raman modes of as-grown graphene within the frequency range of 1650 cm ₋1 to 2300 cm ₋1, along with features of the Raman 2D mode, were employed as signatures of turbostratic graphene. Bilayer and multilayer graphene were directly identified from areas that exhibited Raman characteristics of turbostratic graphene using high-resolution TEM imaging. Lastly, Raman maps of the pertinent modes reveal large regions of turbostratic graphene on Ni(111) thin films at a deposition temperature of 1100°C.« less

Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition

PubMed Central

Garlow, Joseph A.; Barrett, Lawrence K.; Wu, Lijun; Kisslinger, Kim; Zhu, Yimei; Pulecio, Javier F.

2016-01-01

Single-layer graphene has demonstrated remarkable electronic properties that are strongly influenced by interfacial bonding and break down for the lowest energy configuration of stacked graphene layers (AB Bernal). Multilayer graphene with relative rotations between carbon layers, known as turbostratic graphene, can effectively decouple the electronic states of adjacent layers, preserving properties similar to that of SLG. While the growth of AB Bernal graphene through chemical vapor deposition has been widely reported, we investigate the growth of turbostratic graphene on heteroepitaxial Ni(111) thin films utilizing physical vapor deposition. By varying the carbon deposition temperature between 800 –1100 °C, we report an increase in the graphene quality concomitant with a transition in the size of uniform thickness graphene, ranging from nanocrystallites to thousands of square microns. Combination Raman modes of as-grown graphene within the frequency range of 1650 cm−1 to 2300 cm−1, along with features of the Raman 2D mode, were employed as signatures of turbostratic graphene. Bilayer and multilayer graphene were directly identified from areas that exhibited Raman characteristics of turbostratic graphene using high-resolution TEM imaging. Raman maps of the pertinent modes reveal large regions of turbostratic graphene on Ni(111) thin films at a deposition temperature of 1100 °C. PMID:26821604

Novel applications of ionic liquids in materials processing

NASA Astrophysics Data System (ADS)

Reddy, Ramana G.

2009-05-01

Ionic liquids are mixtures of organic and inorganic salts which are liquids at room temperature. Several potential applications of ionic liquids in the field of materials processing are electrowinning and electrodeposition of metals and alloys, electrolysis of active metals at low temperature, liquid-liquid extraction of metals. Results using 1-butyl-3-methylimidazolium chloride with AlCl3 at low temperatures yielded high purity aluminium deposits (>99.9% pure) and current efficiencies >98%. Titanium and aluminium were co-deposited with/without the addition of TiCl4 with up to 27 wt% Ti in the deposit with current efficiencies in the range of 78-85 %. Certain ionic liquids are potential replacements for thermal oils and molten salts as heat transfer fluids in solar energy applications due to high thermal stability, very low corrosivity and substantial sensible heat retentivity. The calculated storage densities for several chloride and fluoride ionic liquids are in the range of 160-210 MJ/m3. A 3-D mathematical model was developed to simulate the large scale electrowinning of aluminium. Since ionic liquids processing results in their low energy consumption, low pollutant emissions many more materials processing applications are expected in future.

Effect of electron-beam deposition process variables on the film characteristics of the CrOx films

NASA Astrophysics Data System (ADS)

Chiu, Po-kai; Liao, Yi-Ting; Tsai, Hung-Yin; Chiang, Donyau

2018-02-01

The film characteristics and optical properties of the chromium oxide films on the glass substrates prepared by electron-beam deposition with different process variables were investigated. The process variables included are the various oxygen flow rates, the different applied substrate temperatures, and the preparation process in Ar or O2 surrounding environment with and without ion-assisted deposition. The optical constants of the deposited films are determined from the reflectance and transmittance measurements obtained using a spectrophotometer with wavelengths ranging from 350 nm to 2000 nm. The microstructures of the films were examined by the XRD, SEM, and XPS. The electrical conductivity was measured by a four-point probe instrument. The resulting microstructures of all the prepared films are amorphous and the features of the films are dense, uniform and no pillar structure is observed. The refractive index of deposited films decrease with oxygen flow rate increase within studied wavelengths and the extinction coefficients have the same trend in wavelengths of UV/Vis ranges. Increasing substrate temperature to 200 oC results in increase of both refractive index and extinction coefficient, but substrate temperatures below 150 oC show negligible effect on optical constants. The optical and electrical properties in the prepared CrOx films are illustrated by the analyzed XPS results, which decompose the enveloped curve of chromium electron energy status into the constituents of metal Cr, oxides CrO2 and Cr2O3. The relative occupied area contributed from metal Cr and area contributed from the other oxides can express the concentration ratio of free electron to covalent bonds in deposited films and the ratio is applied to explain the film characteristics, including the optical constants and sheet resistance.

Temperature sensitivity of silicon nitride nanocoated long-period gratings working in various surrounding media

NASA Astrophysics Data System (ADS)

Smietana, M.; Bock, W. J.; Mikulic, P.

2011-11-01

This paper presents the temperature sensing properties of a silicon nitride (SiNx) nanocoated long-period grating (LPG). A high-temperature, radio-frequency plasma-enhanced chemical-vapor-deposited SiNx nanocoating was applied to tune the external refractive index (RI) sensitivity of LPGs written with UV and electric arc techniques in boron co-doped and standard germanium doped fibers, respectively. The technique allows for deposition of good quality, hard and wear-resistant nanofilms as are required for optical sensors. Thanks to the high-RI SiNx nanocoating, which is less than 90 nm thick, it is possible to reduce RI sensitivity over a wide range (from nD = 1.333 to 1.479), simultaneously decreasing its cross-sensitivity to temperature. For the presented nanocoated LPGs, the temperature effect on resonance wavelength is linear and slightly dependent on the thermo-optic coefficient of the surrounding liquid. The other advantage of the nanocoating is that it makes the resonance clearly visible in the whole investigated external RI range. To the best of our knowledge, this work presents for the first time a nanocoating able to simultaneously tune the RI sensitivity and enable temperature measurements in high-RI liquids applied to LPGs.

Room-temperature wide-range luminescence and structural, optical, and electrical properties of SILAR deposited Cu-Zn-S nano-structured thin films

NASA Astrophysics Data System (ADS)

Jose, Edwin; Kumar, M. C. Santhosh

2016-09-01

We report the deposition of nanostructured Cu-Zn-S composite thin films by Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. The structural, morphological, optical, photoluminescence and electrical properties of Cu-Zn-S thin films are investigated. The results of X-ray diffraction (XRD) and Raman spectroscopy studies indicate that the films exhibit a ternary Cu-Zn-S structure rather than the Cu xS and ZnS binary composite. Scanning electron microscope (SEM) studies show that the Cu-Zn-S films are covered well over glass substrates. The optical band gap energies of the Cu-Zn-S films are calculated using UV-visible absorption measurements, which are found in the range of 2.2 to 2.32 eV. The room temperature photoluminescence studies show a wide range of emissions from 410 nm to 565 nm. These emissions are mainly due to defects and vacancies in the composite system. The electrical studies using Hall effect measurements show that the Cu-Zn-S films are having p-type conductivity.

Dependence of millimeter wave surface resistance on the deposition parameters of laser ablated YBa2Cu3O(x) thin films

NASA Technical Reports Server (NTRS)

Wosik, J.; Robin, T.; Davis, M.; Wolfe, J. C.; Forster, K.; Deshmukh, S.; Bensaoula, A.; Sega, R.; Economou, D.; Ignatiev, A.

1990-01-01

Measurements of millimeter-wave surface resistance versus temperature have been performed for YBa2Cu3O(x) thin films on 100 line-type SrTiO(3) substrates using a TE(011) cylindrical copper cavity at 80 GHz. The 0.6-micron thick films were grown at several deposition temperatures in the range 690 C to 810 C by means of a pulsed excimer laser ablation technique. A surface resistance minimum (60 milliohm at 77 K) near 770 C is shown to correlate with a minimum in c-axis lattice parameter (11.72 A). The highest value of Tc also occurs near this temperature. The surface resistance of films deposited at 790 C on 110 line-type LaAlO3 subtrates is lower, reaching 8 milliohm at 98 GHz and 80 K, demonstrating the influence of substate material on film quality.

Direct synthesis of graphene on silicon oxide by low temperature plasma enhanced chemical vapor deposition.

PubMed

Muñoz, Roberto; Martínez, Lidia; López-Elvira, Elena; Munuera, Carmen; Huttel, Yves; García-Hernández, Mar

2018-06-27

Direct graphene growth on silicon with a native oxide using plasma enhanced chemical vapour deposition at low temperatures [550 °C-650 °C] is demonstrated for the first time. It is shown that the fine-tuning of a two-step synthesis with gas mixtures C2H2/H2 yields monolayer and few layer graphene films with a controllable domain size from 50 nm to more than 300 nm and the sheet resistance ranging from 8 kΩ sq-1 to less than 1.8 kΩ sq-1. Differences are understood in terms of the interaction of the plasma species - chiefly atomic H - with the deposited graphene and the native oxide layer. The proposed low temperature direct synthesis on an insulating substrate does not require any transfer processes and improves the compatibility with the current industrial processes.

Synthesis of thin films in boron-carbon-nitrogen ternary system by microwave plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Kukreja, Ratandeep Singh

The Boron Carbon Nitorgen (B-C-N) ternary system includes materials with exceptional properties such as wide band gap, excellent thermal conductivity, high bulk modulus, extreme hardness and transparency in the optical and UV range that find application in most fields ranging from micro-electronics, bio-sensors, and cutting tools to materials for space age technology. Interesting materials that belong to the B-C-N ternary system include Carbon nano-tubes, Boron Carbide, Boron Carbon Nitride (B-CN), hexagonal Boron Nitride ( h-BN), cubic Boron Nitride (c-BN), Diamond and beta Carbon Nitride (beta-C3N4). Synthesis of these materials requires precisely controlled and energetically favorable conditions. Chemical vapor deposition is widely used technique for deposition of thin films of ceramics, metals and metal-organic compounds. Microwave plasma enhanced chemical vapor deposition (MPECVD) is especially interesting because of its ability to deposit materials that are meta-stable under the deposition conditions, for e.g. diamond. In the present study, attempt has been made to synthesize beta-carbon nitride (beta-C3N4) and cubic-Boron Nitride (c-BN) thin films by MPECVD. Also included is the investigation of dependence of residual stress and thermal conductivity of the diamond thin films, deposited by MPECVD, on substrate pre-treatment and deposition temperature. Si incorporated CNx thin films are synthesized and characterized while attempting to deposit beta-C3N4 thin films on Si substrates using Methane (CH4), Nitrogen (N2), and Hydrogen (H2). It is shown that the composition and morphology of Si incorporated CNx thin film can be tailored by controlling the sequence of introduction of the precursor gases in the plasma chamber. Greater than 100mum size hexagonal crystals of N-Si-C are deposited when Nitrogen precursor is introduced first while agglomerates of nano-meter range graphitic needles of C-Si-N are deposited when Carbon precursor is introduced first in the deposition chamber. Hexagonal -- BN thin films are successfully deposited using Diborane (B2H6) (5% in H2), Ammonia (NH3) and H2 as precursor gases in the conventional MPECVD mode with and without the negative DC bias. The quality of h-BN in the films improved with pressure and when NH3 used as the first precursor gas in the deposition chamber. c-BN thin films are successfully deposited using Boron-Trifluoride (BF3) (10% in Argon (Ar)), N2, H2, Ar and Helium (He) gases in the electron cyclotron resonance (ECR) mode of the MPECVD system with negative DC bias. Up-to 66% c-BN in the films is achieved under deposition conditions of lower gas flow rates and higher deposition pressures than that reported in the literature for film deposited by ECR-MPECVD. It is shown that the percentage c-BN in the films correlates with the deposition pressure, BF3/H2 ratio and, negative DC bias during nucleation and growth. Diamond thin films are deposited using 60%Ar, 39% H2 and, 1%CH4 at 600°C, 700°C and 800°C substrate temperatures, measured by an IR pyrometer, on Si substrates pre-treated with 3-6nm diamond sol and 20-40mum diamond slurry. Raman spectroscopy, FTIR, X-Ray diffraction (XRD) and, photo-thermal reflectivity methods are used to characterize the thin films. Residual stresses observed for the diamond thin films deposited in this study are tensile in nature and increased with deposition temperature. Better quality diamond films with lower residual stresses are obtained for films deposited on Si substrate pre-treated with 3-6nm diamond sol. Preliminary results on thermal conductivity, k, suggest that k is directly dependent on the deposition temperature and independent of substrate pre-treatment signifying that the nano-seeding technique can be used to replace conventional surface activation technique for diamond seeding where needed.

Mixed Convection Flow in Horizontal CVD Reactors

NASA Astrophysics Data System (ADS)

Chiu, Wilson K. S.; Richards, Cristy J.; Jaluria, Yogesh

1998-11-01

Increasing demands for high quality films and production rates are challenging current Chemical Vapor Deposition (CVD) technology. Since film quality and deposition rates are strongly dependent on gas flow and heat transfer (W.K.S. Chiu and Y. Jaluria, ASME HTD-Vol. 347, pp. 293-311, 1997.), process improvement is obtained through the study of mixed convection flow and temperature distribution in a CVD reactor. Experimental results are presented for a CVD chamber with a horizontal or inclined resistance heated susceptor. Vaporized glycol solution illuminated by a light sheet is used for flow visualization. Temperature measurements are obtained by inserting thermocouple probes into the gas stream or embedding probes into the reactor walls. Flow visualization and temperature measurements show predominantly two dimensional flow and temperature distributions along the streamwise direction under forced convection conditions. Natural convection dominates under large heating rates and low flow rates. Over the range of parameters studied, several distinct flow regimes, characterized by instability, separation, and turbulence, are evident. Different flow regimes alter the flow pattern and temperature distribution, and in consequence, significantly modify deposition rates and uniformity.

Temperature studies of optical parameters of (Ag3AsS3)0.6(As2S3)0.4 thin films prepared by rapid thermal evaporation and pulse laser deposition

NASA Astrophysics Data System (ADS)

Studenyak, I. P.; Kutsyk, M. M.; Buchuk, M. Yu.; Rati, Y. Y.; Neimet, Yu. Yu.; Izai, V. Yu.; Kökényesi, S.; Nemec, P.

2016-02-01

(Ag3AsS3)0.6(As2S3)0.4 thin films were deposited using rapid thermal evaporation (RTE) and pulse laser deposition (PLD) techniques. Ag-enriched micrometre-sized cones (RTE) and bubbles (PLD) were observed on the thin film surface. Optical transmission spectra of the thin films were studied in the temperature range 77-300 K. The Urbach behaviour of the optical absorption edge in the thin films due to strong electron-phonon interaction was observed, the main parameters of the Urbach absorption edge were determined. Temperature dependences of the energy position of the exponential absorption edge and the Urbach energy are well described in the Einstein model. Dispersion and temperature dependences of refractive indices were analysed; a non-linear increase of the refractive indices with temperature was revealed. Disordering processes in the thin films were studied and compared with bulk composites, the differences between the thin films prepared by RTE and PLD were analysed.

Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

NASA Astrophysics Data System (ADS)

Park, M. G.; Choi, W. S.; Hong, B.; Kim, Y. T.; Yoon, D. H.

2002-05-01

In this article, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiC:H) films on annealing temperature (Ta) and radio frequency (rf) power. The substrate temperature (Ts) was 250 °C, the rf power was varied from 30 to 400 W, and the range of Ta was from 400 to 600 °C. The a-SiC:H films were deposited by using the plasma enhanced chemical vapor deposition system on Corning 7059 glasses and p-type Si (100) wafers with a SiH4+CH4 gas mixture. The experimental results have shown that the optical bandgap energy (Eg) of the a-SiC:H thin films changed little on the annealing temperature while Eg increased with the rf power. The Raman spectrum of the thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs. The current-voltage characteristics have shown good electrical properties in relation to the annealed films.

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

PubMed Central

2014-01-01

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

Chemical Vapor Deposition of Turbine Thermal Barrier Coatings

NASA Technical Reports Server (NTRS)

Haven, Victor E.

1999-01-01

Ceramic thermal barrier coatings extend the operating temperature range of actively cooled gas turbine components, therefore increasing thermal efficiency. Performance and lifetime of existing ceram ic coatings are limited by spallation during heating and cooling cycles. Spallation of the ceramic is a function of its microstructure, which is determined by the deposition method. This research is investigating metalorganic chemical vapor deposition (MOCVD) of yttria stabilized zirconia to improve performance and reduce costs relative to electron beam physical vapor deposition. Coatings are deposited in an induction-heated, low-pressure reactor at 10 microns per hour. The coating's composition, structure, and response to the turbine environment will be characterized.

Thin Film CuInS2 Prepared by Spray Pyrolysis with Single-Source Precursors

NASA Technical Reports Server (NTRS)

Jin, Michael H.; Banger, Kulinder K.; Harris, Jerry D.; Cowen, Jonathan E.; Hepp, Aloysius F.; Lyons, Valerie (Technical Monitor)

2002-01-01

Both horizontal hot-wall and vertical cold-wall atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS2 thin films. Single-source precursors developed for ternary chalcopyrite materials were used for this study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 C. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. Conductive films were deposited with planar electrical resistivities ranging from 1 to 30 Omega x cm.

Grain boundary dominated electrical conductivity in ultrananocrystalline diamond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiora, Neda; Mertens, Michael; Bruhne, Kai

Here, N-type electrically conductive ultrananocrystalline diamond (UNCD) films were deposited using the hot filament chemical vapor deposition technique with a gas mixture of H 2, CH 4 and NH 3. Depending on the deposition temperature and ammonia feed gas concentration, which serves as a nitrogen source, room temperature electrical conductivities in the order of 10 –2 to 5 × 10 1S/cm and activation energies in the meV range were achieved. In order to understand the origin of the enhanced electrical conductivity and clarify the role of ammonia addition to the process gas, a set of UNCD films was grown bymore » systematically varying the ammonia gas phase concentration. These samples were analyzed with respect to their morphology and electrical properties as well as their carbon and nitrogen bonding environments. Temperature dependent electrical conductivity measurements (300–1200 K) show that the electrical conductivity of the samples increases with temperature. The near edge x-ray absorption fine structure measurements reveal that the electrical conductivity of the UNCD films does not correlate directly with ammonia addition, but depends on the total amount of sp2 bonded carbon in the deposited films.« less

Grain boundary dominated electrical conductivity in ultrananocrystalline diamond

DOE PAGES

Wiora, Neda; Mertens, Michael; Bruhne, Kai; ...

2017-10-09

Here, N-type electrically conductive ultrananocrystalline diamond (UNCD) films were deposited using the hot filament chemical vapor deposition technique with a gas mixture of H 2, CH 4 and NH 3. Depending on the deposition temperature and ammonia feed gas concentration, which serves as a nitrogen source, room temperature electrical conductivities in the order of 10 –2 to 5 × 10 1S/cm and activation energies in the meV range were achieved. In order to understand the origin of the enhanced electrical conductivity and clarify the role of ammonia addition to the process gas, a set of UNCD films was grown bymore » systematically varying the ammonia gas phase concentration. These samples were analyzed with respect to their morphology and electrical properties as well as their carbon and nitrogen bonding environments. Temperature dependent electrical conductivity measurements (300–1200 K) show that the electrical conductivity of the samples increases with temperature. The near edge x-ray absorption fine structure measurements reveal that the electrical conductivity of the UNCD films does not correlate directly with ammonia addition, but depends on the total amount of sp2 bonded carbon in the deposited films.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Virginia R.; Nepal, Neeraj; Johnson, Scooter D.

Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes and are under investigation for further application in optoelectronics, photovoltaics, and efficient power switching technologies. Alloys of the binary semiconductors allow adjustments of the band gap, an important semiconductor material characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7 eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic chemical vapor deposition and molecular beam epitaxy. Temperatures of 900 °C and higher are required to deposit high quality AlN. Research into depositing III-nitrides with atomic layermore » epitaxy (ALEp) is ongoing because it is a fabrication friendly technique allowing lower growth temperatures. Because it is a relatively new technique, there is insufficient understanding of the ALEp growth mechanism which will be essential to development of the process. Here, grazing incidence small angle x-ray scattering is employed to observe the evolving behavior of the surface morphology during growth of AlN by ALEp at temperatures from 360 to 480 °C. Increased temperatures of AlN resulted in lower impurities and relatively fewer features with short range correlations.« less

Atmospheric pressure atomic layer deposition of Al₂O₃ using trimethyl aluminum and ozone.

PubMed

Mousa, Moataz Bellah M; Oldham, Christopher J; Parsons, Gregory N

2014-04-08

High throughput spatial atomic layer deposition (ALD) often uses higher reactor pressure than typical batch processes, but the specific effects of pressure on species transport and reaction rates are not fully understood. For aluminum oxide (Al2O3) ALD, water or ozone can be used as oxygen sources, but how reaction pressure influences deposition using ozone has not previously been reported. This work describes the effect of deposition pressure, between ∼2 and 760 Torr, on ALD Al2O3 using TMA and ozone. Similar to reports for pressure dependence during TMA/water ALD, surface reaction saturation studies show self-limiting growth at low and high pressure across a reasonable temperature range. Higher pressure tends to increase the growth per cycle, especially at lower gas velocities and temperatures. However, growth saturation at high pressure requires longer O3 dose times per cycle. Results are consistent with a model of ozone decomposition kinetics versus pressure and temperature. Quartz crystal microbalance (QCM) results confirm the trends in growth rate and indicate that the surface reaction mechanisms for Al2O3 growth using ozone are similar under low and high total pressure, including expected trends in the reaction mechanism at different temperatures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Loeffler, M. J.; Moore, M. H.; Gerakines, P. A.

We present the first study on the effects of the deposition technique on the measurements of the visible refractive index and the density of a low-temperature ice using solid carbon dioxide (CO{sub 2}) at 14–70 K as an example. While our measurements generally agree with previous studies that show a dependence of index and density on temperature below 50 K, we also find that the measured values depend on the method used to create each sample. Below 50 K, we find that the refractive index varied by as much as 4% and the density by as much as 16% atmore » a single temperature depending on the deposition method. We also show that the Lorentz–Lorenz approximation is valid for solid CO{sub 2} across the full 14–70 K temperature range, regardless of the deposition method used. Since the refractive index and density are important in calculations of optical constants and infrared (IR) band strengths of materials, our results suggest that the deposition method must be considered in cases where n {sub vis} and ρ are not measured in the same experimental setup where the IR spectral measurements are made.« less

Temperature-Dependent Adhesion of Graphene Suspended on a Trench

PubMed Central

2015-01-01

Graphene deposited over a trench has been studied in the context of nanomechanical resonators, where experiments indicate adhesion of the graphene sheet to the trench boundary and sidewalls leads to self-tensioning; however, this adhesion is not well understood. We use molecular dynamics to simulate graphene deposited on a trench and study how adhesion to the sidewalls depends on substrate interaction, temperature, and curvature of the edge of the trench. Over the range of parameters we study, the depth at the center of the sheet is approximately linear in substrate interaction strength and temperature but not trench width, and we explain this using a one-dimensional model for the sheet configuration. PMID:26652939

Mechanisms of nitrogen heterocycle influence on turbine fuel stability

NASA Technical Reports Server (NTRS)

Daniel, S. R.; Worstell, J. H.

1980-01-01

Lewis bases were extracted from a Utah COED syncrude via ligand exchange. Addition of this extract to Jet A at levels as low as 5 ppm N produced deterioration of stability in both JFTOT and accelerated storage tests (7 days at 394 K with 13:1air to fuel ratio). Comparable effects on Jet A stability were obtained by addition of pyridine and quinoline, while pyrrole and indole were less detrimental at the same concentration level. The weight of deposit produced accelerated storage tests was found to be proportional to the concentration of added nitrogen compound. Over the narrow temperature range accessible with the experimental method, Arrhenius plots obtained by assuming specific rate to be proportional to the weight of material deposited in seven days exhibit greater slopes in the presence of those nitrogen compounds producing the greater deposition rates. It is shown that despite variation in appearance the elemental composition and spectral characteristics of the deposits are unaffected by addition of the nitrogen compounds. The linearity of the Arrhenius plots and of a plot of Arrhenius slope versus intercept for all the compounds suggests a constancy of mechanism over the range of temperature and heterocycles studied.

Growth of ZnOx:Al by high-throughput CVD at atmospheric pressure

NASA Astrophysics Data System (ADS)

Illiberi, A.; Simons, P. J. P. M.; Kniknie, B.; van Deelen, J.; Theelen, M.; Zeman, M.; Tijssen, M.; Zijlmans, W.; Steijvers, H. L. A. H.; Habets, D.; Janssen, A. C.; Beckers, E. H. A.

2012-05-01

Aluminum doped zinc oxide films (ZnOx:Al) have been deposited on a moving glass substrate by a metalorganic CVD process at atmospheric pressure in an in-line industrial type reactor. Tertiary-butanol has been used as an oxidant for diethylzinc and trimethylaluminium as the dopant gas. The effect of the deposition temperature (from 380 to 540 °C) on the deposition rate has been investigated by a numerical code, where a gas phase reaction among tertiary-butanol and diethylzinc is assumed to occur. The structural (crystallinity and morphology) properties of the films as a function of the deposition temperature have been analyzed by using X-ray diffraction and Scanning Electron Microscopy. A maximum growth rate of ˜11 nm/s was found at a deposition temperature of 480 °C, for which ZnOx:Al films show (002) preferential orientation, good crystalline quality and a naturally rough surface. ZnOx:Al films deposited at 480 °C are also highly conductive (R<10 Ω/□ for film thicknesses above 1050 nm) and transparent (>85% in the visible range). These films have been used as front transparent conductive oxide layers in p i n a-Si:H solar cells, achieving an initial efficiency approaching 8%.

Applications of high pressure differential scanning calorimetry to aviation fuel thermal stability research

NASA Technical Reports Server (NTRS)

Neveu, M. C.; Stocker, D. P.

1985-01-01

High pressure differential scanning calorimetry (DSC) was studied as an alternate method for performing high temperature fuel thermal stability research. The DSC was used to measure the heat of reaction versus temperature of a fuel sample heated at a programmed rate in an oxygen pressurized cell. Pure hydrocarbons and model fuels were studied using typical DSC operating conditions of 600 psig of oxygen and a temperature range from ambient to 500 C. The DSC oxidation onset temperature was determined and was used to rate the fuels on thermal stability. Kinetic rate constants were determined for the global initial oxidation reaction. Fuel deposit formation is measured, and the high temperature volatility of some tetralin deposits is studied by thermogravimetric analysis. Gas chromatography and mass spectrometry are used to study the chemical composition of some DSC stressed fuels.

Growth temperature modulated phase evolution and functional characteristics of high quality Pb1-x Lax (Zr0.9Ti0.1)O3 thin films

NASA Astrophysics Data System (ADS)

Kumar, Anuj; Pawar, Shuvam; Singh, Kirandeep; Kaur, Davinder

2018-05-01

In this study, we have reported the influence of growth temperature on perovskite phase evolution in sputtered deposited high quality Pb1-x Lax (Zr0.9 Ti0.1)O3 (PLZT) thin films on Pt/Ti/SiO2/Si substrate. PLZT thin films were fabricated at substrate temperature ranging from 400 to 700 °C. We have investigated the structural, dielectric, ferroelectric and leakage current characteristics of these thin films. XRD patterns reveal that 600 °C is the optimized temperature to deposit highly (110) oriented perovskite phase PLZT thin film. The further increase in temperature (700 °) causes reappearance of additional peaks corresponding to lead deficient pyrochlore phase. All PLZT thin films show decrease in dielectric constant with frequency. However, PLZT thin film fabricated at 600 °C displays dielectric constant ˜532 at 1 MHz frequency which is relatively higher than other deposited thin films. The P-E loops of these PLZT thin films exhibit strong dependence on deposition temperature. The pure perovskite PZLT thin film shows saturation polarization of ˜51.2µC/cm2 and coercive field (2Ec) ˜67.85 kV/cm. These high quality PLZT thin films finds their applications in non-volatile memory and nano-electro-mechanical systems (NEMS).

Preparation and characterization of boron nitride coatings on carbon fibers from borazine by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Li, Jun-Sheng; Zhang, Chang-Rui; Li, Bin

2011-06-01

Boron nitride (BN) coatings were deposited on carbon fibers by chemical vapor deposition (CVD) using borazine as single source precursor. The deposited coatings were characterized by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The effect of temperatures on growth kinetics, morphology, composition and structure of the coatings was investigated. In the low temperature range of 900 °C-1000 °C, the growth rate increased with increasing temperature complying with Arrhenius law, and an apparent active energy of 72 kJ/mol was calculated. The coating surface was smooth and compact, and the coatings uniformly deposited on individual fibers of carbon fiber bundles. The growth was controlled by surface reaction. At 1000 °C, the deposition rate reached a maximum (2.5 μm/h). At the same time, the limiting step of the growth translated to be mass-transportation. Above 1100 °C, the growth rate decreased drastically due to the occurrence of gas-phase nucleation. Moreover, the coating surface became loose and rough. Composition and structure examinations revealed that stoichiometric BN coatings with turbostratic structure were obtained below 1000 °C, while hexagonal BN coatings were deposited above 1100 °C. A penetration of carbon element from the fibers to the coatings was observed.

Ash chemistry and sintering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skrifvars, B.J.; Backman, R.; Hupa, Mikko

1996-12-31

The thermal behavior of a fuel ash is one important factor to consider when fireside slagging and fouling problems in steam boilers are addressed. It is well known that different types of chemical reactions and melts in deposits play an important role in the build-up of problematic fireside deposits. Low viscous melts occur in steam boilers mainly when salt mixtures are present in the ash. Such are Merent mixtures of alkali and earth alkali sulfates, chlorides and carbonates. These mixtures do not melt at a certain temperature but form a melt in a temperature range which in some cases maymore » be several hundreds of degrees. The amount of melt is crucial for the deposit build-up. For some boilers it has been found that roughly 10 - 20 weight-% melt in an ash mixture would be enough to cause extensive deposit formation, while 60 - 80 weight-% melt would already cause the ash to be so wet it would flow down a vertical tube and not cause any further deposit growth.« less

Flight measurement of molecular contaminant deposition

NASA Astrophysics Data System (ADS)

Hall, David F.

1994-10-01

A spacecraft was instrumented with four temperature controlled quartz crystal microbalance (TQCM) contamination detectors. One TQCM, located inside the vehicle, recorded contaminant deposition that was orders of magnitude higher than did the three TQCMs located in various positions outside the vehicle. The deposition rate on the interior TQCM varied with the temperatures of interior spacecraft cavity surfaces. In particular, there is clear evidence of condensation on these surfaces and re-evaporation from these surfaces by previously outgassed contaminant molecules. The e-folding time constants of the deposition on two of the exterior TQCMs held at -50 degree(s)C are approximately 1.4 years, with extrapolated final equivalent thickness of the deposition in the 20 - 25 nm (200 - 250 angstroms) range. The third exterior TQCM, which has a significant field of view of a segmented thermal blanket, collected contamination at a greater rate. The data enable the ranking of the several contamination transport mechanisms at work and the drawing of general recommendations for spacecraft design.

Magnetization and anisotropy of cobalt ferrite thin films

NASA Astrophysics Data System (ADS)

Eskandari, F.; Porter, S. B.; Venkatesan, M.; Kameli, P.; Rode, K.; Coey, J. M. D.

2017-12-01

The magnetization of thin films of cobalt ferrite frequently falls far below the bulk value of 455 kA m-1 , which corresponds to an inverse cation distribution in the spinel structure with a significant orbital moment of about 0.6 μB that is associated with the octahedrally coordinated Co2+ ions. The orbital moment is responsible for the magnetostriction and magnetocrystalline anisotropy and its sensitivity to imposed strain. We have systematically investigated the structure and magnetism of films produced by pulsed-laser deposition on different substrates (Ti O2 , MgO, MgA l2O4 , SrTi O3 , LSAT, LaAl O3 ) and as a function of temperature (500 -700 °C) and oxygen pressure (10-4-10 Pa ) . Magnetization at room-temperature ranges from 60 to 440 kA m-1 , and uniaxial substrate-induced anisotropy ranges from +220 kJ m-3 for films on deposited on MgO (100) to -2100 kJ m-3 for films deposited on MgA l2O4 (100), where the room-temperature anisotropy field reaches 14 T. No rearrangement of high-spin Fe3+ and Co2+ cations on tetrahedral and octahedral sites can reduce the magnetization below the bulk value, but a switch from Fe3+ and Co2+ to Fe2+ and low-spin Co3+ on octahedral sites will reduce the low-temperature magnetization to 120 kA m-1 , and a consequent reduction of Curie temperature can bring the room-temperature value to near zero. Possible reasons for the appearance of low-spin cobalt in the thin films are discussed.

Capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode

NASA Astrophysics Data System (ADS)

Gawri, Isha; Sharma, Mamta; Jindal, Silky; Singh, Harpreet; Tripathi, S. K.

2018-05-01

The present paper reports the capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode using chemical bath deposition method. Here anodic alumina layer prepared using electrolytic deposition method on Al substrate is used as insulating material. Using the capacitance-voltage variation at a fixed frequency, the different parameters such as Depletion layer width, Barrier height, Built-in voltage and Carrier concentration has been calculated at room temperature as well as at temperature range from 123 K to 323 K. With the increase in temperature the barrier height and depletion layer width follow a decreasing trend. Therefore, the capacitance-voltage characterization at different temperatures characterization provides strong evidence that the properties of MIS diode are primarily affected by diode parameters.

Synthesis of diamond films at low temperature and study of nonlinear dynamic synthesis process

NASA Astrophysics Data System (ADS)

Zhao, Qingxun; Shang, Yong; Dong, Lifang; Fu, Guangsheng; Yan, Zheng; Yang, Jingfa

2002-09-01

In this paper, the experimental synthesis of diamond films and optical emission spectroscopy (OES) of the gaseous phase species are studied in the range of substrate temperature from Ts = 300°C to 850°C. The high quality sub-microcrystalline diamond films are successfully deposited at substrate temperature (330 ≍ 340)°C by adopting glow plasma assisted hot filament chemical vapor deposition (GPCVD). For the first time, in situ OES is applied to diagnose weak signal of GPCVD system when CH4 and H2 are used as the input gas, and the reactive species are identified in diamond growth processes. A primary model of diamond films growing at low temperature is presented by studying dynamic behavior for nonequilibrium plasma reactions.

Laser Dew-Point Hygrometer

NASA Astrophysics Data System (ADS)

Matsumoto, Shigeaki; Toyooka, Satoru

1995-01-01

A rough-surface-type automatic dew-point hygrometer was developed using a laser diode and an optical fiber cable. A gold plate with 0.8 µ m average surface roughness was used as a surface for deposition of dew to facilitate dew deposition and prevent supersaturation of water vapor at the dew point. It was shown experimentally that the quantity of dew deposited can be controlled to be constant at any predetermined level, and is independent of the dew point to be measured. The dew points were measured in the range from -15° C to 54° C in which the temperature ranged from 0° C to 60° C. The measurement error of the dew point was ±0.5° C which was equal to below ±2% in relative humidity in the above dew-point range.

Changes in the dissolved organic matter leaching from soil under severe temperature and N-deposition.

PubMed

Nguyen, Hang Vo-Minh; Choi, Jung Hyun

2015-06-01

In this study, we conducted growth chamber experiments using three types of soil (wetland, rice paddy, and forest) under the conditions of a severe increase in the temperature and N-deposition in order to investigate how extreme weather influences the characteristics of the dissolved organic matter (DOM) leaching from different soil types. This leachate controls the quantity and quality of DOM in surface water systems. After 5 months of incubation, the dissolved organic carbon (DOC) concentrations decreased in the range of 21.1 to 88.9 %, while the specific UV absorption (SUVA) values increased substantially in the range of 19.9 to 319.9 % for all of the samples. Higher increases in the SUVA values were observed at higher temperatures, whereas the opposite trend was observed for samples with N-addition. The parallel factor analysis (PARAFAC) results showed that four fluorescence components: terrestrial humic-like (component 1 (C1)), microbial humic-like (component 2 (C2)), protein-like (component 3 (C3)), and anthropogenic humic-like (component 4 (C4)) constituted the fluorescence matrices of soil samples. During the experiment, labile DOM from the soils was consumed and transformed into resistant aromatic carbon structures and less biodegradable components via microbial processes. The principle component analysis (PCA) results indicated that severe temperatures and N-deposition could enhance the contribution of the aromatic carbon compounds and humic-like components in the soil samples.

Silicon nitride films fabricated by a plasma-enhanced chemical vapor deposition method for coatings of the laser interferometer gravitational wave detector

NASA Astrophysics Data System (ADS)

Pan, Huang-Wei; Kuo, Ling-Chi; Huang, Shu-Yu; Wu, Meng-Yun; Juang, Yu-Hang; Lee, Chia-Wei; Chen, Hsin-Chieh; Wen, Ting Ting; Chao, Shiuh

2018-01-01

Silicon is a potential substrate material for the large-areal-size mirrors of the next-generation laser interferometer gravitational wave detector operated in cryogenics. Silicon nitride thin films uniformly deposited by a chemical vapor deposition method on large-size silicon wafers is a common practice in the silicon integrated circuit industry. We used plasma-enhanced chemical vapor deposition to deposit silicon nitride films on silicon and studied the physical properties of the films that are pertinent to application of mirror coatings for laser interferometer gravitational wave detectors. We measured and analyzed the structure, optical properties, stress, Young's modulus, and mechanical loss of the films, at both room and cryogenic temperatures. Optical extinction coefficients of the films were in the 10-5 range at 1550-nm wavelength. Room-temperature mechanical loss of the films varied in the range from low 10-4 to low 10-5 within the frequency range of interest. The existence of a cryogenic mechanical loss peak depended on the composition of the films. We measured the bond concentrations of N - H , Si - H , Si - N , and Si - Si bonds in the films and analyzed the correlations between bond concentrations and cryogenic mechanical losses. We proposed three possible two-level systems associated with the N - H , Si - H , and Si - N bonds in the film. We inferred that the dominant source of the cryogenic mechanical loss for the silicon nitride films is the two-level system of exchanging position between a H+ and electron lone pair associated with the N - H bond. Under our deposition conditions, superior properties in terms of high refractive index with a large adjustable range, low optical absorption, and low mechanical loss were achieved for films with lower nitrogen content and lower N - H bond concentration. Possible pairing of the silicon nitride films with other materials in the quarter-wave stack is discussed.

MOCVD of aluminium oxide films using aluminium β-diketonates as precursors

NASA Astrophysics Data System (ADS)

Devi, A.; Shivashankar, S. A.; Samuelson, A. G.

2002-06-01

Deposition of Al203 coatings by CVD is of importance because they are often used as abrading material in cemented carbide cutting tools. The conventionally used CVD process for Al203 involves the corrosive reactant AICl3. In this paper, we report on the thermal characterisation of the metalorganic precursors namely aluminium tris-tetramethyl-heptanedionate [ Al(thd)3] and aluminium tris-acetylacetonate [ Al(acac)3] and their application to the CVD of Al203 films. Crystalline A1203 films were deposited by MOCVD at low temperatures by the pyrolysis of Al(thd)3 and AI(acac)3. The films were deposited on a TiN-coated tungsten carbide (TiN/WC) and Si(100) substrates in the temperature range 500-1100 °C. The as-deposited films were characterised by x-ray diffraction, optical microscopy, scanning and transmission electron microscopy, Auger electron spectroscopy. The observed crystallinity of films grown at low temperatures, their microstructure, and composition may be interpreted in terms of a growth process that involves the melting of the metalorganic precursor on the hot growth surface.

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

DOEpatents

Madan, A.

1984-12-10

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

SEMICONDUCTOR MATERIALS: White light photoluminescence from ZnS films on porous Si substrates

NASA Astrophysics Data System (ADS)

Caifeng, Wang; Qingshan, Li; Bo, Hu; Weibing, Li

2010-03-01

ZnS films were deposited on porous Si (PS) substrates using a pulsed laser deposition (PLD) technique. White light emission is observed in photoluminescence (PL) spectra, and the white light is the combination of blue and green emission from ZnS and red emission from PS. The white PL spectra are broad, intense in a visible band ranging from 450 to 700 nm. The effects of the excitation wavelength, growth temperature of ZnS films, PS porosity and annealing temperature on the PL spectra of ZnS/PS were also investigated.

Deposition temperature dependence of material and Si surface passivation properties of O{sub 3}-based atomic layer deposited Al{sub 2}O{sub 3}-based films and stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bordihn, Stefan, E-mail: s.bordihn2@q-cells.com; Mertens, Verena; Müller, Jörg W.

2014-01-15

The material composition and the Si surface passivation of aluminum oxide (Al{sub 2}O{sub 3}) films prepared by atomic layer deposition using Al(CH{sub 3}){sub 3} and O{sub 3} as precursors were investigated for deposition temperatures (T{sub Dep}) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H] < 0.5 at. % at 400 °C and 500 °C. The surface passivation performance was investigated after annealing at 300 °C–450 °C and also after firing stepsmore » in the typical temperature range of 800 °C–925 °C. A similar high level of the surface passivation performance, i.e., surface recombination velocity values <10 cm/s, was obtained after annealing and firing. Investigations of Al{sub 2}O{sub 3}/SiN{sub x} stacks complemented the work and revealed similar levels of surface passivation as single-layer Al{sub 2}O{sub 3} films, both for the chemical and field-effect passivation. The fixed charge density in the Al{sub 2}O{sub 3}/SiN{sub x} stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10{sup 12} cm{sup −2} to 3·10{sup 11} cm{sup −2} when T{sub Dep} was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T{sub Dep}. When firing films prepared at of low T{sub Dep}, blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al{sub 2}O{sub 3}-based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen.« less

Confined high-pressure chemical deposition of hydrogenated amorphous silicon.

PubMed

Baril, Neil F; He, Rongrui; Day, Todd D; Sparks, Justin R; Keshavarzi, Banafsheh; Krishnamurthi, Mahesh; Borhan, Ali; Gopalan, Venkatraman; Peacock, Anna C; Healy, Noel; Sazio, Pier J A; Badding, John V

2012-01-11

Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH(4) precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small-diameter optical fiber capillary templates. The semiconductor materials deposited have ~0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells. © 2011 American Chemical Society

Electronic Power System Application of Diamond-Like Carbon Films

NASA Technical Reports Server (NTRS)

Wu, Richard L. C.; Kosai, H.; Fries-Carr, S.; Weimer, J.; Freeman, M.; Schwarze, G. E.

2003-01-01

A prototype manufacturing technology for producing high volume efficiency and high energy density diamond-like carbon (DLC) capacitors has been developed. Unique dual ion-beam deposition and web-handling systems have been designed and constructed to deposit high quality DLC films simultaneously on both sides of capacitor grade aluminum foil and aluminum-coated polymer films. An optimized process, using inductively coupled RF ion sources, has been used to synthesize electrically robust DLC films. DLC films are amorphous and highly flexible, making them suitable for the production of wound capacitors. DLC capacitors are reliable and stable over a wide range of AC frequencies from 20 Hz to 1 MHz, and over a temperature range from .500 C to 3000 C. The compact DLC capacitors offer at least a 50% decrease in weight and volume and a greater than 50% increase in temperature handling capability over equal value capacitors built with existing technologies. The DLC capacitors will be suitable for high temperature, high voltage, pulsed power and filter applications.

Gold-bearing hedenbergite skarns from the SW contact of the Andorra granite (Central Pyrenees, Spain)

NASA Astrophysics Data System (ADS)

Soler, A.; Ayora, C.; Cardellach, E.; Delgado, J.

1990-12-01

Several varieties of skarn outcrop have been found to develop along the contact between the Andorra granite and the Devonian limestones. The skarns contain variable amounts of gold ranging up to 5 g/t, always associated with sulphides. The sulphides in the skarn include arsenopyrite and pyrrhotite with lesser amounts of chalcopyrite, galena, sphalerite and Bi-minerals. Geothermometric and geobarometric data indicate the skarns formed at about 2 kbar and temperatures ranging from 500 ° to 350 °C from CO2-free polysaline brines at a slightly acidic pH and oxygen fugacity which decreases with time from the pyrite-pyrrhotite-magnetite towards the QFM buffer. Available data on gold solubility suggest that sufficient quantities of gold to form an ore deposit could have been transported as AuCl{2/-}at the high temperatures and salinities under which the skarns formed. Both gold deposition and sulphide precipitation could have occurred due to a decrease in temperature and/or oxygen fugacity.

Deposition of a-C/B films from o-carborane and trimethyl boron precursors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geddes, J.B.; Getty, W.D.

1996-12-31

Vacuum wall deposition of a-B/C films has had tremendous positive impact on the performance of tokamak fusion reactors. In this work, precursor vapor and helium carrier gas have been used to create a plasma using a novel plasma source. Either trimethyl boron (TMB) or sublimed vapor from o-carborane solid can be used as deposition precursors. The plasma operates in a pressure range of 5 to 15 mTorr and typical flow rates are 5 sccm He plus 0.5-1 sccm o-carborane or TMB vapor. The film deposition rate ranges from less than 100 {angstrom}/minute to over 1,000 {angstrom}/minute. Microwave power levels rangemore » from 300--400 W at 2.45 GHz. The temperature and bias of the substrate can be varied, and the temperature of the substrate is recorded during deposition. The films have been analyzed using XPS. The atomic composition of the films has been measured. The o-carborane films have a much higher boron concentration than those deposited from TMB. The chemical bond characteristics of the different species have also been examined for each type of film. The thickness of the films is measured by profilometry, and this is combined with measurements of the film area and weight to calculate the film density. X-ray diffraction analysis has been performed; no evidence of any crystalline structure was found. Films with a thickness of a few thousand {angstrom} are routinely obtained. Deposition rates were 350 {angstrom}/minute on average.« less

Optical and structural properties of cadmium telluride films grown by glancing angle deposition

NASA Astrophysics Data System (ADS)

Ehsani, M. H.; Rezagholipour Dizaji, H.; Azizi, S.; Ghavami Mirmahalle, S. F.; Siyanaki, F. Hosseini

2013-08-01

Cadmium telluride films were grown by the glancing angle deposition (GLAD) technique. The samples were prepared under different incident deposition flux angles (α = 0°, 20° and 70° measured from the normal to the substrate surface). During deposition, the substrate temperature was maintained at room temperature. The structural study was performed using an x-ray diffraction diffractometer. The samples were found to be poly-crystalline with cubic structure for those deposited at α = 0° and 20° and hexagonal structure for the one deposited at 70°. The images of samples obtained by the field emission scanning electron microscopy technique showed that the GLAD method could produce a columnar layer tilted toward the incident deposition flux. The optical properties study by the UV-Vis spectroscopy technique showed that the use of this growth technique affected the optical properties of the films. A higher absorption coefficient in the visible and near-IR spectral range was observed for the sample deposited at α = 70°. This is an important result from the photovoltaic applications point of view where absorber materials with large absorption coefficients are needed. Also, it seems that the sample with a high incident deposition flux angle has the capability of making an n-CdTe/p-CdTe homo-junction.

Basin-Wide Temperature Constraints On Gas Hydrate Stability In The Gulf Of Mexico

NASA Astrophysics Data System (ADS)

MacDonald, I. R.; Reagan, M. T.; Guinasso, N. L.; Garcia-Pineda, O. G.

2012-12-01

Gas hydrate deposits commonly occur at the seafloor-water interface on marine margins. They are especially prevalent in the Gulf of Mexico where they are associated with natural oil seeps. The stability of these deposits is potentially challenged by fluctuations in bottom water temperature, on an annual time-scale, and under the long-term influence of climate change. We mapped the locations of natural oil seeps where shallow gas hydrate deposits are known to occur across the entire Gulf of Mexico basin based on a comprehensive review of synthetic aperture radar (SAR) data (~200 images). We prepared a bottom water temperature map based on the archive of CTD casts from the Gulf (~6000 records). Comparing the distribution of gas hydrate deposits with predicted bottom water temperature, we find that a broad area of the upper slope lies above the theoretical stability horizon for structure 1 gas hydrate, while all sites where gas hydrate deposits occur are within the stability horizon for structure 2 gas hydrate. This is consistent with analytical results that structure 2 gas hydrates predominate on the upper slope (Klapp et al., 2010), where bottom water temperatures fluctuate over a 7 to 10 C range (approx. 600 m depth), while pure structure 1 hydrates are found at greater depths (approx. 3000 m). Where higher hydrocarbon gases are available, formation of structure 2 gas hydrate should significantly increase the resistance of shallow gas hydrate deposits to destabilizing effects variable or increasing bottom water temperature. Klapp, S.A., Bohrmann, G., Kuhs, W.F., Murshed, M.M., Pape, T., Klein, H., Techmer, K.S., Heeschen, K.U., and Abegg, F., 2010, Microstructures of structure I and II gas hydrates from the Gulf of Mexico: Marine and Petroleum Geology, v. 27, p. 116-125.Bottom temperature and pressure for Gulf of Mexico gas hydrate outcrops and stability horizons for sI and sII hydrate.

Regional stratigraphy and distribution of epigenetic stratabound celestine, fluorite, barite and Pb-Zn deposits in the MVT province of northeastern Mexico

NASA Astrophysics Data System (ADS)

González-Sánchez, Francisco; Camprubí, Antoni; González-Partida, Eduardo; Puente-Solís, Rafael; Canet, Carles; Centeno-García, Elena; Atudorei, Viorel

2009-04-01

Northeastern Mexico hosts numerous epigenetic stratabound carbonate-hosted low-temperature hydrothermal deposits of celestine, fluorite, barite and zinc-lead, which formed by replacement of Mesozoic evaporites or carbonate rocks. Such deposits can be permissively catalogued as Mississippi Valley-type (MVT) deposits. The deposits studied in the state of Coahuila are associated with granitic and metasedimentary basement highs (horsts) marginal or central to the Mesozoic Sabinas Basin. These horsts controlled the stratigraphy of the Mesozoic basins and subsequently influenced the Laramide structural pattern. The Sabinas Basin consists of ~6,000-m-thick Jurassic to Cretaceous siliciclastic, carbonate and evaporitic series. The MVT deposits are mostly in Barremian and in Aptian-Albian to Cenomanian formations and likely formed from basinal brines that were mobilized during the Laramide orogeny, although earlier diagenetic replacement of evaporite layers (barite and celestine deposits) and lining of paleokarstic cavities in reef carbonates (Zn-Pb deposits) is observed. Fluid inclusion microthermometry and isotopic studies suggest ore formation due to mixing of basinal brines and meteoric water. Homogenization temperatures of fluid inclusions range from 45°C to 210°C; salinities range from 0 to 26 wt.% NaCl equiv., and some inclusions contain hydrocarbons or bitumen. Sulfur isotope data suggest that most of the sulfur in barite and celestine is derived from Barremian to Cenomanian evaporites. Regional geology and a compilation of metallogenic features define the new MVT province of northeastern Mexico, which comprises most of the state of Coahuila and portions of the neighboring states of Nuevo León, Durango and, perhaps extends into Zacatecas and southern Texas. This province exhibits a regional metal zonation, with celestine deposits to the south, fluorite deposits to the north and barite and Zn-Pb deposits mostly in the central part.

A new temperature and humidity dependent surface site density approach for deposition ice nucleation

NASA Astrophysics Data System (ADS)

Steinke, I.; Hoose, C.; Möhler, O.; Connolly, P.; Leisner, T.

2014-07-01

Deposition nucleation experiments with Arizona Test Dust (ATD) as a surrogate for mineral dusts were conducted at the AIDA cloud chamber at temperatures between 220 and 250 K. The influence of the aerosol size distribution and the cooling rate on the ice nucleation efficiencies was investigated. Ice nucleation active surface site (INAS) densities were calculated to quantify the ice nucleation efficiency as a function of temperature, humidity and the aerosol surface area concentration. Additionally, a contact angle parameterization according to classical nucleation theory was fitted to the experimental data in order to relate the ice nucleation efficiencies to contact angle distributions. From this study it can be concluded that the INAS density formulation is a very useful tool to decribe the temperature and humidity dependent ice nucleation efficiency of ATD particles. Deposition nucleation on ATD particles can be described by a temperature and relative humidity dependent INAS density function ns(T, Sice) with ns(xtherm) = 1.88 × 105 \\centerdot exp(0.2659 \\centerdot xtherm) [m-2] (1) where the thermodynamic variable xtherm is defined as xtherm = -(T - 273.2) + (Sice-1) × 100 (2) with Sice>1 and within a temperature range between 226 and 250 K. For lower temperatures, xtherm deviates from a linear behavior with temperature and relative humidity over ice. Two different approaches for describing the time dependence of deposition nucleation initiated by ATD particles are proposed. Box model estimates suggest that the time dependent contribution is only relevant for small cooling rates and low number fractions of ice-active particles.

Low temperature growth of diamond films on optical fibers using Linear Antenna CVD system

NASA Astrophysics Data System (ADS)

Ficek, M.; Drijkoningen, S.; Karczewski, J.; Bogdanowicz, R.; Haenen, K.

2016-01-01

It is not trivial to achieve a good quality diamond-coated fibre interface due to a large difference in the properties and composition of the diamond films (or use coating even) and the optical fibre material, i.e. fused silica. One of the biggest problems is the high temperature during the deposition which influences the optical fibre or optical fibre sensor structure (e.g. long-period gratings (LPG)). The greatest advantage of a linear antenna microwave plasma enhanced chemical vapor deposition system (LA MW CVD) is the fact that it allows to grow the diamond layers at low temperature (below 300°C) [1]. High quality nanocrystalline diamond (NCD) thin films with thicknesses ranging from 70 nm to 150 nm, were deposited on silicon, glass and optical fibre substrates [2]. Substrates pretreatment by dip-coating and spin coating process with a dispersion consisting of detonation nanodiamond (DND) in dimethyl sulfoxide (DMSO) with polyvinyl alcohol (PVA) has been applied. During the deposition process the continuous mode of operation of the LA MW CVD system was used, which produces a continuous wave at a maximum power of 1.9 kW (in each antenna). Diamond films on optical fibres were obtained at temperatures below 350°C, providing a clear improvement of results compared to our earlier work [3]. The samples were characterized by scanning electron microscopy (SEM) imaging to investigate the morphology of the nanocrystalline diamond films. The film growth rate, film thickness, and optical properties in the VIS-NIR range, i.e. refractive index and extinction coefficient will be discussed based on measurements on reference quartz plates by using spectroscopic ellipsometry (SE).

Effect of photochemical aging on the ice nucleation properties of diesel and wood burning particles

NASA Astrophysics Data System (ADS)

Chou, C.; Stetzer, O.; Tritscher, T.; Chirico, R.; Heringa, M. F.; Kanji, Z. A.; Weingartner, E.; Prévôt, A. S. H.; Baltensperger, U.; Lohmann, U.

2012-06-01

A measurement campaign (IMBALANCE) was conducted in 2009 and aimed at characterizing the physical and chemical properties of freshly emitted and photochemically aged combustion particles emitted from a log wood burner and diesel vehicles: a EURO3 Opel Astra with a diesel oxidation catalyst (DOC) but no particle filter and a EURO2 Volkswagen Transporter TDI Syncro with no emission after-treatment. Ice nucleation experiments in the deposition and condensation freezing modes were conducted with the Portable Ice Nucleation Chamber (PINC) at three nominal temperatures, -30 °C, -35 °C and -40 °C. Freshly emitted diesel particles showed ice formation only at -40 °C in the deposition mode at 137% relative humidity with respect to ice (RHi) and 92% relative humidity with respect to water (RHw), and photochemical aging did not play a role in modifying their ice nucleation behavior. Only one diesel experiment where α-pinene was added, showed an ice nucleation enhancement after the aging at -35 °C. Wood burning particles also act as ice nuclei (IN) at -40 °C in the deposition mode at the same conditions as for diesel particles and photochemical aging did also not alter the ice formation properties of the wood burning particles. Unlike diesel particles, wood burning particles form ice via condensation freezing at -35 °C with no ice nucleation observed at -30 °C for wood burning particles. Photochemical aging did not affect the ice nucleation ability of the diesel and wood burning particles at the three different temperatures investigated but a broader range of temperatures below -30 °C need to be investigated in order to draw an overall conclusion on the effect of photochemical aging on deposition/condensation ice nucleation across the entire temperature range relevant to cold clouds.

Effect of photochemical ageing on the ice nucleation properties of diesel and wood burning particles

NASA Astrophysics Data System (ADS)

Chou, C.; Kanji, Z. A.; Stetzer, O.; Tritscher, T.; Chirico, R.; Heringa, M. F.; Weingartner, E.; Prévôt, A. S. H.; Baltensperger, U.; Lohmann, U.

2013-01-01

A measurement campaign (IMBALANCE) conducted in 2009 was aimed at characterizing the physical and chemical properties of freshly emitted and photochemically aged combustion particles emitted from a log wood burner and diesel vehicles: a EURO3 Opel Astra with a diesel oxidation catalyst (DOC) but no particle filter and a EURO2 Volkswagen Transporter TDI Syncro without emission aftertreatment. Ice nucleation experiments in the deposition and condensation freezing modes were conducted with the Portable Ice Nucleation Chamber (PINC) at three nominal temperatures, -30 °C, -35 °C and -40 °C. Freshly emitted diesel particles showed ice formation only at -40 °C in the deposition mode at 137% relative humidity with respect to ice (RHi) and 92% relative humidity with respect to water (RHw), and photochemical ageing did not play a role in modifying their ice nucleation behaviour. Only one diesel experiment where α-pinene was added for the ageing process, showed an ice nucleation enhancement at -35 °C. Wood burning particles also act as ice nuclei (IN) at -40 °C in the deposition mode at the same conditions as for diesel particles and photochemical ageing also did not alter the ice formation properties of the wood burning particles. Unlike diesel particles, wood burning particles form ice via condensation freezing at -35 °C whereas no ice nucleation was observed at -30 °C. Photochemical ageing did not affect the ice nucleation ability of the diesel and wood burning particles at the three different temperatures investigated but a broader range of temperatures below -40 °C need to be investigated in order to draw an overall conclusion on the effect of photochemical ageing on deposition/condensation ice nucleation across the entire temperature range relevant to cold clouds.

Deposition Ice Nuclei Concentration at Different Temperatures and Supersaturations

NASA Astrophysics Data System (ADS)

López, M. L.; Avila, E.

2013-05-01

Ice formation is one of the main processes involved in the initiation of precipitation. Some aerosols serve to nucleate ice in clouds. They are called ice nuclei (IN) and they are generally solid particles, insoluble in water. At temperatures warmer than about -36°C the only means for initiation of the ice phase in the atmosphere involves IN, and temperature and supersaturation required to activate IN are considered as key information for the understanding of primary ice formation in clouds. The objective of this work is to quantify the IN concentration at ground level in Córdoba City, Argentina, under the deposition mode, that is to say that ice deposits on the IN directly from the vapor phase. It happens when the environment is supersaturated with respect to ice and subsaturated with respect to liquid water. Ice nuclei concentrations were measured in a cloud chamber placed in a cold room with temperature control down to -35°C. The operating temperature was varied between -15°C and -30°C. Ice supersaturation was ranged between 2 and 20 %. In order to quantify the number of ice particles produced in each experiment, a dish containing a supercooled solution of cane sugar, water and glycerol was placed on the floor of the cloud chamber. The activated IN grew at the expense of vapor until ice crystals were formed and these then fell down onto the sugar solution. Once there, these crystals could grow enough to be counted easily with a naked eye after a period of about three minutes, when they reach around 2 mm in diameter. In order to compare the present results with previously reported results, the data were grouped in three different ranges of supersaturation: the data with supersaturations between 2 and 8 %, the data with supersaturations between 8 and 14% and the data with supersaturations between 14 and 20 %. In the same way, in order to analize the behavior of IN concentration with supersaturation, the data were grouped for three different temperatures, the data with temperatures between -15°C and -20°C, the data with temperatures between -20°C and -25°C and the data with temperatures between -25°C and -30°C. The results confirm that for each temperature range, the concentration of IN increases at higher supersaturation, and show the tendency of the IN concentration to increase with increasing ice supersaturation. Based on previous parameterizations, a combination of IN concentration in relation with temperature and ice supersaturation is proposed in this work. As far as we know, this is among the first work to measure and parameterize the concentration of deposition ice nuclei in the Southern Hemisphere.

Development of Laser Fabricated Ti-6Al-4V

NASA Technical Reports Server (NTRS)

deGroh, Henry C., III

2006-01-01

Laser Engineered Net Shaping (LENS) depositions with Ti-6Al-4V gas-atomized powder were accomplished at five different temperatures, ranging from 30 to 400 C, imposed on the base plate. These base plate temperatures were employed in an effort to relieve stresses which develop during the deposition. Warpage of the base plate was monitored. Only a slight decline in warpage was observed as the base plate temperature was increased. Results indicate that substrate temperatures closer to the stress relief minimum of 480 C would relieve deposition stresses, though process parameters would likely need to be modified to compensate for the higher base plate temperature. The compositions of the as-received powder and the LENS deposited material were chemically analyzed. The oxygen content of the LENS material was 0.154 wt.% which is less than the maximum impurity limit of 0.2 percent for commercial Ti-6Al-4V alloys, but is over the limit allowed in ELI grade (0.13 percent). The level of oxygen in the commercial base plate used was only 0.0635 percent. Tensile specimens were machined from the LENS deposited material and tested in tension at room temperature. The ultimate and yield tensile stresses of the LENS material were about 1200 and 1150 MPa respectively, which is about 20 percent higher than the strengths of wrought Ti-6Al-4V. The higher strength of the LENS material was due to its fine structure and high oxygen content. The LENS deposits were not fully dense; voids were frequent at the interfaces between deposited layers. These dispersed sheets of voids were parallel to the longitudinal axis of the resulting tensile specimens. Apparently there was sufficient continuous, fully dense material longitudinally to enable the high strengths. Ductility was low in the LENS material. Percent elongation at failure in the LENS material was near 4 percent, which is less than half of what is usually expected from Ti-6Al-4V. The low ductility was caused by high oxygen levels, and the presence of voids. It is likely that the relatively high scan speeds used in our depositions contributed to the lack of full density in our LENS material.

Chapter D: With or Without Salt-a Comparison of Marine and Continental-Lacustrine Diatomite Deposits

USGS Publications Warehouse

Moyle, Phillip R.; Dolley, Thomas P.

2003-01-01

Diatoms in sedimentary deposits of marine and continental, especially lacustrine, origin have similar nutrient (for example, phosphate, nitrate, and silica) and light requirements; however, their geologic ranges and physiographic environments vary. Marine diatoms range in age from Early Cretaceous to Holocene, and continental diatoms range in age from Eocene to Holocene; however, most commercial diatomites, both marine and lacustrine, were deposited during the Miocene. Marine deposits of commercial value generally accumulated along continental margins with submerged coastal basins and shelves where wind-driven boundary currents provided the nutrient-rich upwelling conditions capable of supporting a productive diatom habitat. Commercial freshwater diatomite deposits occur in volcanic terrains associated with events that formed sediment-starved drainage basins, such as the Basin and Range Province, particularly in Nevada. Marine habitats generally are characterized by stable conditions of temperature, salinity, pH, nutrients, and water currents, in contrast to lacustrine habitats, which are characterized by wide variations in these conditions. Marine deposits generally are of higher quality and contain larger resources, owing to their greater areal extent and thickness, whereas most of the world's known diatomites are of lacustrine origin. Both types of deposit are commonly mined by open-pit methods and subjected to processing designed to remove organic matter, CO2, pore water, and inorganic contaminants in order to produce purified products. The highest quality diatomites, predominantly from marine sources, are used in filtration, although both types of deposit produce filter grades, and additional end uses include fillers, additives, absorbents, and abrasives.

Optimization of chemical vapor deposition diamond films growth on steel: correlation between mechanical properties, structure, and composition.

PubMed

Laikhtman, A; Rapoport, L; Perfilyev, V; Moshkovich, A; Akhvlediani, R; Hoffman, A

2011-09-01

In the present work we perform optimization of mechanical and crystalline properties of CVD microcrystalline diamond films grown on steel substrates. A chromium-nitride (Cr-N) interlayer had been previously proposed to serve as a buffer for carbon and iron inter-diffusion and as a matching layer for the widely differing expansion coefficients of diamond and steel. However, adhesion and wear as well as crystalline perfection of diamond films are strongly affected by conditions of both Cr-N interlayer preparation and CVD diamond deposition. In this work we assess the effects of two parameters. The first one is the temperature of the Cr-N interlayer preparation: temperatures in the range of 500 degrees C-800 degrees C were used. The second one is diamond film thickness in the 0.5 microm-2 microm range monitored through variation of the deposition time from approximately 30 min to 2 hours. The mechanical properties of so deposited diamond films were investigated. For this purpose, scratch tests were performed at different indentation loads. The friction coefficient and wear loss were assessed. The mechanical and tribological properties were related to structure, composition, and crystalline perfection of diamond films which were extensively analyzed using different microscopic and spectroscopic techniques. It was found that relatively thick diamond film deposited on the Cr-N interlayer prepared at the temperature similar to that of the CVD process has the best mechanical and adhesion strength. This film was stable without visible cracks around the wear track during all scratch tests with different indentation loads. In other cases, cracking and delamination of the films took place at low to moderate indentation loads.

Negative to positive crossover of the magnetoresistance in layered WS{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yangwei; Ning, Honglie; Li, Yanan

2016-04-11

The discovery of graphene ignited intensive investigation of two-dimensional materials. A typical two-dimensional material, transition metal dichalcogenide (TMDC), attracts much attention because of its excellent performance in field effect transistor measurements and applications. Particularly, when TMDC reaches the dimension of a few layers, a wide range of electronic and optical properties can be detected that are in striking contrast to bulk samples. In this letter, we synthesized WS{sub 2} single-crystal nanoflakes using physical vapor deposition and carried out a series of measurements of the contact resistance and magnetoresistance. Focused ion beam (FIB) technology was applied to deposit Pt electrodes onmore » the WS{sub 2} flakes, and the FIB-deposited contacts exhibited linear electrical characteristics. Resistance versus temperature measurements showed similar Mott variable range hopping behavior in different magnetic fields. Additionally, a temperature-modulated negative-to-positive magnetoresistance transition was observed. Our work reveals the magnetotransport characteristics of WS{sub 2} flakes, which may stimulate further studies of the properties of TMDC and its corresponding electronic and optoelectronic applications.« less

Silicanizing Process On Mild Steel Substrate by Using Tronoh Silica Sand: Microstructure, composition and coating growth

NASA Astrophysics Data System (ADS)

Y, Yusnenti F. M.; M, Othman; Mustapha, Mazli; I, MohdYusri

2016-02-01

A new Silicanizing process on formation of coating on mild steel using Tronoh Silica Sand (TSS) is presented. The process was performed in the temperature range 1000- 1100°C and with varying deposition time of 1-4 hours. Influence of the layer and the substrate constituents on the coating compatibility of the whole silicanized layer is described in detail. Morphology and structure of the silicanized layer were investigated by XRF, XRD and SEM. It is observed that diffusion coatings containing high concentrations of silica which profile distribution of SiO2 in the silicanized layer was encountered and the depth from the surface to the substrate was taken as the layer thickness. The results also depicted that a longer deposition time have tendency to produce a looser and larger grain a hence rougher layer. The silicanized layer composed of FeSi and Fe2SiO4 phases with preferred orientation within the experimental range. It is also found that longer deposition time and higher temperature resulted in an increase in SiO2 concentration on the substrate (mild steel).

CVD of silicon carbide on structural fibers - Microstructure and composition

NASA Technical Reports Server (NTRS)

Veitch, Lisa C.; Terepka, Francis M.; Gokoglu, Suleyman A.

1992-01-01

Structural fibers are currently being considered as reinforcements for intermetallic and ceramic materials. Some of these fibers, however, are easily degraded in a high temperature oxidative environment. Therefore, coatings are needed to protect the fibers from environmental attack. Silicon carbide (SiC) was chemically vapor deposited (CVD) on Textron's SCS6 fibers. Fiber temperatures ranging from 1350 to 1500 C were studied. Silane (SiH4) and propane (C2H8) were used for the source gases and different concentrations of these source gases were studied. Deposition rates were determined for each group of fibers at different temperatures. Less variation in deposition rates were observed for the dilute source gas experiments than the concentrated source gas experiments. A careful analysis was performed on the stoichiometry of the CVD SiC coating using electron microprobe. Microstructures for the different conditions were compared. At 1350 C, the microstructures were similar; however, at higher temperatures, the microstructure for the more concentrated source gas group were porous and columnar in comparison to the cross sections taken from the same area for the dilute source gas group.

CVD of silicon carbide on structural fibers: Microstructure and composition

NASA Technical Reports Server (NTRS)

Veitch, Lisa C.; Terepka, Francis M.; Gokoglu, Suleyman A.

1992-01-01

Structural fibers are currently being considered as reinforcements for intermetallic and ceramic materials. Some of these fibers, however, are easily degraded in a high temperature oxidative environment. Therefore, coatings are needed to protect the fibers from environmental attack. Silicon carbide (SiC) was chemically vapor deposited (CVD) on Textron's SCS6 fibers. Fiber temperatures ranging from 1350 to 1500 C were studied. Silane (SiH4) and propane (C2H8) were used for the source gases and different concentrations of these source gases were studied. Deposition rates were determined for each group of fibers at different temperatures. Less variation in deposition rates were observed for the dilute source gas experiments than the concentrated source gas experiments. A careful analysis was performed on the stoichiometry of the CVD SiC coating using electron microprobe. Microstructures for the different conditions were compared. At 1350 C, the microstructures were similar; however, at higher temperatures, the microstructure for the more concentrated source gas group were porous and columnar in comparison to the cross sections taken from the same area for the dilute source gas group.

Trapping of CH4, CO, and CO2 in Amorphous Water Ice

NASA Astrophysics Data System (ADS)

Mastrapa, R. M. E.; Brown, R. H.; Anicich, V. G.; Cohen, B. A.; Dai, W.; Lunine, J. I.

1999-09-01

In this study, CO, CH4, and CO2 were trapped in H2O at temperatures as low as 20 K and pressures between 10-5 and 10-8 Torr. IR spectra were taken of each sample before sublimation to confirm the presence of volatiles. The samples were then heated at rates from 0.25 K/min to 1 K/min and the escape ranges were measured with a mass spectrometer. The volatiles escaped from the ice mixtures in temperature ranges similar to those found in previous work (1, 2, 3), namely 48-52 K, 145-160 K, 170-185 K. H2O is released from 150 K to 185 K. However, the temperature range of escape is strongly dependent on deposition temperature and heating rate. If the deposition temperature is below the point where the solid volatile rapidly sublimates in the ambient environment of our experiment, then the first range of volatile escape is centered around it's sublimation point, and there is little of the volatile remaining from 170-185 K. The location of the third escape range shifts to lower temperatures with slower sublimation rate. It was determined that 0.5 K/min is the ideal sample heating rate to determine these escape ranges. In our data, the infrared spectrum of CO trapped in water ice shows a splitting of the 2145 cm-1 solid CO line into two bands at 2343 cm-1 and 2135 cm-1. These shifts are similar to those seen by Sandford, et al. (4). (1) Bar-Nun, A., G. Herman, D. Laufer, and M. L. Rappaport, (1985), Icarus, 63, 317-332. (2) Bar-Nun, A., J. Dror, E. Kochavi, and D. Laufer, (1987), Physical Review B, 35, no. 5, 2427-2435. (3) Hudson, R. L., and B. Donn, (1991), Icarus, 94, 326-332. (4) Sandford, S. A., L. J. Allamandola, A. G. G. M. Tielens, and G. J. Valero, (1988), Astrophysical Journal, 329, 498-510.

Slowing down of alpha particles in ICF DT plasmas

NASA Astrophysics Data System (ADS)

He, Bin; Wang, Zhi-Gang; Wang, Jian-Guo

2018-01-01

With the effects of the projectile recoil and plasma polarization considered, the slowing down of 3.54 MeV alpha particles is studied in inertial confinement fusion DT plasmas within the plasma density range from 1024 to 1026 cm-3 and the temperature range from 100 eV to 200 keV. It includes the rate of the energy change and range of the projectile, and the partition fraction of its energy deposition to the deuteron and triton. The comparison with other models is made and the reason for their difference is explored. It is found that the plasmas will not be heated by the alpha particle in its slowing down the process once the projectile energy becomes close to or less than the temperature of the electron or the deuteron and triton in the plasmas. This leads to less energy deposition to the deuteron and triton than that if the recoil of the projectile is neglected when the temperature is close to or higher than 100 keV. Our model is found to be able to provide relevant, reliable data in the large range of the density and temperature mentioned above, even if the density is around 1026 cm-3 while the deuteron and triton temperature is below 500 eV. Meanwhile, the two important models [Phys. Rev. 126, 1 (1962) and Phys. Rev. E 86, 016406 (2012)] are found not to work in this case. Some unreliable data are found in the last model, which include the range of alpha particles and the electron-ion energy partition fraction when the electron is much hotter than the deuteron and triton in the plasmas.

Fluid inclusion constraints on the genesis of the Puladi muscovite deposit in Gongshan County, Yunnan Province

NASA Astrophysics Data System (ADS)

Yin, Qiong; Liu, Wei

2017-12-01

This paper focuses on beryl mines in the Maji region of Yunnan Province, which are characterized by fluid inclusions. Based on petrography theory, mineralogy, and ore-forming geological conditions, beryl can be divided as CO2 and CO2-H2O inclusions. In addition, the characteristics of inclusions in the coordinate of A/B is summarized. The homogenization temperature of fluid inclusions in the coordinate of A ranges from 250 °C to 397 °C, while the salinity of fluid inclusions ranges from 0.18% to 4.27%. By contrast, the homogenization temperature in the coordinate of B ranges from 210 °C to 340 °C, and the salinity is from 0.22% to 5.11%. The pressure of ore-forming fluid in the coordinate of A/B is approximately 83 MPa with densities of 0.8034 g/m3 and 0.8363 g/m3, which are characteristic of mediumtemperature, low-salinity, and medium-density fluids. Based on Raman spectra and different metallogenic depths, the two types of beryl belong to different metallogenic belts. The beryl deposits in Gongshan are of medium-temperature gas-hydrothermal type.

Post-Metamorphic Thermal Anomaly across the Nacimiento Block, Central California: a Hydrothermal Overprint?

NASA Astrophysics Data System (ADS)

Lacroix, B.; Hughes, J.; Lahfid, A.; Delchini, S.

2017-12-01

The thermal history of the Nacimiento block located within the Franciscan Complex (California, USA) has been previously proposed based on both vitrinite reflectance (Rm) and illite cristallinity methods (Underwood et al., 1995). These authors suggest that the Nacimiento block is locally perturbed by a thermal anomaly (up to 300ºC), probably caused by post-metamorphic hydrothermal activity linked to the emplacement of an Au-deposit: the Los Burros Gold deposit. Although both thermal anomaly and deposit seem spatially correlated, their relationship is still poorly constrained. Detailed geological and structural mapping within the Los Burros Mining District (LBMD) coupled with a thermal study was conducted to better understand processes responsible for the anomalous temperatures recorded near the deposit. The regional maximum temperature reached by metasediments from the Nacimiento block have been first investigated using the Raman Spectroscopy of Carbonaceous Materials (RSCM) method. In addition, through careful fluid-inclusion and stable isotopes (O and C) studies on the deposit, the temperature and the potential source of the fluid responsible for the Los Burros Au-deposit emplacement were investigated. RSCM technique confirms the presence of a thermal anomaly in the range 260-320ºC near LBMD. However, our structural and petrographic results suggest that the thermal anomaly is not correlated to a post-metamorphic hydrothermal overprint but rather to a late, transpressive deformation uplifting buried metamorphic rocks.

Physical Property Characterization of Pb2+-Doped CdS Nanofilms Deposited by Chemical-Bath Deposition at Low Temperature

NASA Astrophysics Data System (ADS)

Díaz-Reyes, J.; Contreras-Rascón, J. I.; Galván-Arellano, M.; Arias-Cerón, J. S.; Gutiérrez-Arias, J. E. M.; Flores-Mena, J. E.; Morín-Castillo, M. M.

2016-12-01

Pb2 +-doped CdS nanofilms are prepared using the growth technique chemical bath deposition (CBD) under optimum conditions lead acetate at the reservoir temperature of 20 ± 2 °C. The Pb2+ molar concentration was in the range 0.0 ≤ x ≤ 0.19.67, which was determined by energy-dispersive X-ray spectroscopy (EDS). The X-ray diffraction results show that the films are of PbS-CdS composites with individual CdS and PbS planes. The X-ray diffraction (XRD) analysis and Raman scattering reveal that CdS-deposited films showed the zincblende (ZB) crystalline phase. The average grain size of the CdS films ranged from 1.21 to 6.67 nm that was determined by the Debye-Scherrer equation from ZB (111) direction, and it was confirmed by high-resolution transmission electron microscopy (HRTEM). Raman scattering shows that the lattice dynamics is characteristic of bimodal behaviour and the multipeaks adjust of the first optical longitudinal mode for the Pb2+-doped CdS denotes the Raman shift of the characteristic peak in the range of 305-298 cm-1 of the CdS crystals, which is associated with the lead ion incorporation. The films exhibit three direct bandgaps, 2.44 eV attributed to CdS; the other varies continuously from 1.67 to 1.99 eV and another disappears as Pb2+ molar fraction increases.

Laboratory studies of silicon vapor deposition, phase A. [feasibility of producing thin films for photovoltaic applications

NASA Technical Reports Server (NTRS)

Frost, R. T.; Racette, G. W.; Stockhoff, E. H.

1977-01-01

A system is described capable of carrying out silicon vapor deposition experiments in the low 10 to the minus 10th power torr vacuum range. The system was assembled and tested for use in a program aimed at exploration of vacuum heteroepitaxy of silicon on several substrates of potential interest for photovoltaic applications. An experiment is described in which a silicon layer 2.5 microns thick was deposited on a pyrolytically cleaned tungsten substrate held at a temperature of 400 C. Using a resistance heated silicon source, thicker layers can be deposited in periods of hours by utilizing closer source to substrate distances.

A new temperature- and humidity-dependent surface site density approach for deposition ice nucleation

NASA Astrophysics Data System (ADS)

Steinke, I.; Hoose, C.; Möhler, O.; Connolly, P.; Leisner, T.

2015-04-01

Deposition nucleation experiments with Arizona Test Dust (ATD) as a surrogate for mineral dusts were conducted at the AIDA cloud chamber at temperatures between 220 and 250 K. The influence of the aerosol size distribution and the cooling rate on the ice nucleation efficiencies was investigated. Ice nucleation active surface site (INAS) densities were calculated to quantify the ice nucleation efficiency as a function of temperature, humidity and the aerosol surface area concentration. Additionally, a contact angle parameterization according to classical nucleation theory was fitted to the experimental data in order to relate the ice nucleation efficiencies to contact angle distributions. From this study it can be concluded that the INAS density formulation is a very useful tool to describe the temperature- and humidity-dependent ice nucleation efficiency of ATD particles. Deposition nucleation on ATD particles can be described by a temperature- and relative-humidity-dependent INAS density function ns(T, Sice) with ns(xtherm) = 1.88 ×105 · exp(0.2659 · xtherm) [m-2] , (1) where the temperature- and saturation-dependent function xtherm is defined as xtherm = -(T-273.2)+(Sice-1) ×100, (2) with the saturation ratio with respect to ice Sice >1 and within a temperature range between 226 and 250 K. For lower temperatures, xtherm deviates from a linear behavior with temperature and relative humidity over ice. Also, two different approaches for describing the time dependence of deposition nucleation initiated by ATD particles are proposed. Box model estimates suggest that the time-dependent contribution is only relevant for small cooling rates and low number fractions of ice-active particles.

Raman studied of undoped amorphous carbon thin film deposited by bias assisted-CVD

NASA Astrophysics Data System (ADS)

Ishak, A.; Fadzilah, A. N.; Dayana, K.; Saurdi, I.; Malek, M. F.; Nurbaya, Z.; Shafura, A. K.; Rusop, M.

2018-05-01

The undoped amorphous carbon thin film carbon was deposited at 200°C-350°C by bias assisted-CVD using palm oil as a precursor material. The effect of different substrate deposition temperatures on structural and electrical properties of undoped doped amorphous carbon film was discussed. The structural of undoped amorphous carbon films were correlated with Raman analysis through the evolution of D and G bands, Fourier spectra, and conductivity measurement. The spectral evolution observed showed the increase of upward shift of D and G peaks as substrate deposition temperatures increased. The spectral evolution observed at different substrate deposition temperatures show progressive formation of crystallites. It was predicted that small number of hydrogen is terminated with carbon at surface of thin film as shown by FTIR spectra since palm oil has high number of hydrogen (C67H127O8). These structural changes were further correlated with conductivity and the results obtained are discussed and compared. The conductivity is found in the range of 10-8 Scm-1. The increase of conductivity is correlated by the change of structural properties as correlated with characteristic parameters of Raman spectra including the position of G peak, full width at half maximum of G peak, and ID/IG and FTIR result.

Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

NASA Astrophysics Data System (ADS)

Dinh, Toan; Viet Dao, Dzung; Phan, Hoang-Phuong; Wang, Li; Qamar, Afzaal; Nguyen, Nam-Trung; Tanner, Philip; Rybachuk, Maksym

2015-06-01

We report on the temperature dependence of the charge transport and activation energy of amorphous silicon carbide (a-SiC) thin films grown on quartz by low-pressure chemical vapor deposition. The electrical conductivity as characterized by the Arrhenius rule was found to vary distinctly under two activation energy thresholds of 150 and 205 meV, corresponding to temperature ranges of 300 to 450 K and 450 to 580 K, respectively. The a-SiC/quartz system displayed a high temperature coefficient of resistance ranging from -4,000 to -16,000 ppm/K, demonstrating a strong feasibility of using this material for highly sensitive thermal sensing applications.

Structural, mineralogical and geochemical constraints on the atypical komatiite-hosted Turret deposit in the Agnew-Mt. White district, Western Australia

NASA Astrophysics Data System (ADS)

Voute, F.; Thébaud, N.

2015-08-01

In the Norseman-Wiluna belt, Yilgarn Craton, the Agnew-Mt. White district is the host of many gold deposits. Located in the hinge of the regional Lawlers anticline, the Turret gold deposit is structurally controlled by the Table Hill shear zone that transects the Agnew Ultramafic unit. Geochemistry, coupled with petrographic data, allowed the delineation of the paragenetic sequence associated with gold mineralisation and include (1) a pervasive talc-carbonate alteration assemblage, (2) a pre-mineralisation stage associated with pervasive arsenopyrite + chalcopyrite + pyrrhotite + pyrite alteration, followed by (3) a late deformation event along a dilatational segment of the main Table Hill shear zone, leading to the formation of a breccia hosting a Cu-Bi-Mo-Au (± Ag ± Zn ± Te ± W) metal assemblage. The presence of Au-Ag-Cu alloys, native bismuth, chalcopyrite and other Bi-Te-S phases in the mineralisation stage suggest that gold may have been scavenged from the hydrothermal fluids by composite Bi-Te-Cu-Au-Ag-S liquids or melts. Using this mineral paragenetic sequence, together with mineralogical re-equilibration textures observed, we show that the gold deposition at Turret occurred over a temperature range approximately between c. 350 and 270 °C. This temperature range, together with the structural control and typical mesothermal alteration pattern including carbonate-chlorite alteration, shows that the Turret deposit shares common characteristics with the orogenic gold deposit class. However, the metal association of Cu, Au, Bi, and Mo, the quartz-poor, and high copper-sulphide content (up to 15 %) are characteristics that depart from the typical orogenic gold deposit mineralogy. Through comparison with similar deposits in the Yilgarn Craton and worldwide, we propose that the Turret deposit represents an example of a porphyry-derived Au-Cu-Bi-Mo deposit.

Thickness effects of yttria-doped ceria interlayers on solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Fan, Zeng; An, Jihwan; Iancu, Andrei; Prinz, Fritz B.

2012-11-01

Determining the optimal thickness range of the interlayed yttria-doped ceria (YDC) films promises to further enhance the performance of solid oxide fuel cells (SOFCs) at low operating temperatures. The YDC interlayers are fabricated by the atomic layer deposition (ALD) method with one super cycle of the YDC deposition consisting of 6 ceria deposition cycles and one yttria deposition cycle. YDC films of various numbers of ALD super cycles, ranging from 2 to 35, are interlayered into bulk fuel cells with a 200 um thick yttria-stabilized zirconia (YSZ) electrolyte. Measurements and analysis of the linear sweep voltammetry of these fuel cells reveal that the performance of the given cells is maximized at 10 super cycles. Auger elemental mapping and X-ray photoelectron spectroscopy (XPS) techniques are employed to determine the film completeness, and they verify 10 super cycles of YDC to be the critical thickness point. This optimal YDC interlayer condition (6Ce1Y × 10 super cycles) is applied to the case of micro fuel cells as well, and the average performance enhancement factor is 1.4 at operating temperatures of 400 and 450 °C. A power density of 1.04 W cm-2 at 500 °C is also achieved with the optimal YDC recipe.

Effect of Thermal Annealing on the Band GAP and Optical Properties of Chemical Bath Deposited ZnSe Thin Films

NASA Astrophysics Data System (ADS)

Ezema, F. I.; Ekwealor, A. B. C.; Osuji, R. U.

2006-05-01

Zinc selenide (ZnSe) thin films were deposited on glass substrate using the chemical bath deposition method at room temperature from aqueous solutions of zinc sulphate and sodium selenosulfate in which sodium hydroxide was employed as complexing agents. The `as-deposited' ZnSe thin films are red in color and annealed in oven at 473 K for 1 hour and on a hot plate in open air at 333 K for 5 minutes, affecting the morphological and optical properties. Optical properties such as absorption coefficient a and extinction coefficient k, were determined using the absorbance and transmission measurement from Unico UV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-1000 nm. The films have transmittance in VIS-NIR regions that range between 26 and 87%. From absorbance and transmittance spectra, the band gap energy determined ranged between 1.60 eV and 1.75 for the `as deposited' samples, and the annealed samples exhibited a band gap shift of 0.15 eV. The high transmittance of the films together with its large band gap made them good materials for selective coatings for solar cells.

Oxygen plasma ashing effects on aluminum and titanium space protective coatings

NASA Technical Reports Server (NTRS)

Synowicki, R.; Kubik, R. D.; Hale, J. S.; Peterkin, Jane; Nafis, S.; Woollam, John A.; Zaat, S.

1991-01-01

Using variable angle spectroscopic ellipsometry and atomic force microscopy (AFM), the surface roughness and oxidation of aluminum and titanium thin films have been studied as a function of substrate deposition temperature and oxygen plasma exposure. Increasing substrate deposition temperatures affect film microstructure by greatly increasing grain size. Short exposures to an oxygen plasma environment produce sharp spikes rising rapidly above the surface as seen by AFM. Ellipsometric measurements were made over a wide range of plasma exposure times, and results at longer exposure times suggest that the surface is greater than 30% void. This is qualitatively verified by the AFM images.

Influence of Oxygen Content in Oriented LaCoO3-δ Thin Films: Probed by X-ray diffraction and Raman Spectroscopy

NASA Astrophysics Data System (ADS)

Mishra, D. K.; Ahlawat, Anju; Sathe, V. G.

2011-07-01

Nonstoichiometric oriented thin films of LaCoO3-δ of equal thickness and varying oxygen content has been deposited on STO (001) substrate by pulsed laser deposition. X-ray diffraction results show that all films are single phase and c-axis oriented in the (001) direction with in plane tensile strain. In these films strain reduces with increasing oxygen content and Raman study also support this result. Low temperature Raman study shows no change in spin state of Co3+ in temperature range from 300 K to down to 80 K.

Modeling of phase transformations of Ti6Al4 V during laser metal deposition

NASA Astrophysics Data System (ADS)

Suárez, A.; Tobar, M. J.; Yáñez, A.; Pérez, I.; Sampedro, J.; Amigó, V.; Candel, J. J.

The low density, excellent high temperature mechanical properties and good corrosion resistance of titanium and its alloys have led to a diversified range of successful applications. As a consequence, there is a demand of increasing the capabilities of processing such alloys. The laser cladding technique allows direct metal deposition with an excellent metallurgical bond and a pore free fine grained microstructure. A nonlinear transient thermo-metallurgical model was developed to study the technique with titanium alloys to get a better understanding of the thermal and metallurgical underlying aspects. The calculated temperatures and phase transformations are compared with experimental tests.

Protective coatings for high-temperature polymer matrix composites

NASA Technical Reports Server (NTRS)

Harding, David R.; Sutter, James K.; Papadopoulos, Demetrios S.

1993-01-01

Plasma-enhanced chemical vapor deposition was used to deposit silicon nitride on graphite-fiber-reinforced polyimide composites to protect against oxidation at elevated temperatures. The adhesion and integrity of the coating were evaluated by isothermal aging (371 C for 500 hr) and thermal cycling. The amorphous silicon nitride (a-SiN:H) coating could withstand stresses ranging from approximately 0.18 GPa (tensile) to -1.6 GPa (compressive) and provided a 30 to 80 percent reduction in oxidation-induced weight loss. The major factor influencing the effectiveness of a-SiN:H as a barrier coating against oxidation is the surface finish of the polymer composite.

Rectifying magnetic tunnel diode like behavior in Co2MnSi/ZnO/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Nath, T. K.

2018-04-01

The rectifying magnetic tunnel diode like behavior has been observed in Co2MnSi/ZnO/p-Si heterostructure. At first an ultra thin layer of ZnO has been deposited on p-Si (100) substrate with the help of pulsed laser deposition (PLD). After that a highly spin-polarized Heusler alloy Co2MnSi (CMS) film (250 nm) has been grown on ZnO/p-Si using electron beam physical vapor deposition technique. The phase purity of the sample has been confirmed through high resolution X-Ray diffraction technique. The electrical transport properties have been investigated at various isothermal conditions in the temperature range of 77-300 K. The current-voltage characteristics exhibit an excellent rectifying tunnel diode like behavior throughout the temperature regime. The current (I) across the junction has been found to decrease with the application of an external magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The magnetic field dependent JMR behavior of our heterostructure has been investigated in the same temperature range. Our heterostructure clearly demonstrates a giant positive JMR at 78 K (˜264%) and it starts decreasing with increasing temperature. If we compare our results with earlier reported results on other heterostructures, it can be seen that the JMR value for our heterojunction saturates at a much lower external magnetic field, thus creating it a better alternative for spin tunnel diodes in upcoming spintronics device applications.

C-QDs@UiO-66-(COOH)2 Composite Film via Electrophoretic Deposition for Temperature Sensing.

PubMed

Feng, Ji-Fei; Gao, Shui-Ying; Shi, Jianlin; Liu, Tian-Fu; Cao, Rong

2018-03-05

Temperature plays a crucial role in both scientific research and industry. However, traditional temperature sensors, such as liquid-filled thermometers, thermocouples, and transistors, require contact to obtain heat equilibrium between the probe and the samples during the measurement. In addition, traditional temperature sensors have limitations when being used to detect the temperature change of fast-moving samples at smaller scales. Herein, the carbon quantum dots (C-QDs) functionalized metal-organic framework (MOF) composite film, a novel contactless solid optical thermometer, has been prepared via electrophoretic deposition (EPD). Instead of terephthalic acid (H 2 BDC), 1',2',4',5'-benzenetetracarboxylic (H 4 BTEC) acid was employed to construct a UiO-66 framework to present two uncoordinated carboxylic groups decorated on the pore surface. The uncoordinated carboxylic groups can generate negative charges, which facilitates the deposition of film on the positive electrode during the EPD process. Moreover, UiO-66-(COOH) 2 MOFs can absorb C-QDs from the solution and prevent C-QDs from aggregating, and the well-dispersed C-QDs impart fluorescence characteristics to composites. As-synthesized composite film was successfully used to detect temperature change in the range of 97-297 K with a relative sensitivity up to 1.3% K -1 at 297 K.

The El Teniente porphyry Cu-Mo deposit from a hydrothermal rutile perspective

NASA Astrophysics Data System (ADS)

Rabbia, Osvaldo M.; Hernández, Laura B.; French, David H.; King, Robert W.; Ayers, John C.

2009-11-01

Mineralogical, textural, and chemical analyses (EPMA and PIXE) of hydrothermal rutile in the El Teniente porphyry Cu-Mo deposit help to better constrain ore formation processes. Rutile formed from igneous Ti-rich phases (sphene, biotite, Ti-magnetite, and ilmenite) by re-equilibration and/or breakdown under hydrothermal conditions at temperatures ranging between 400°C and 700°C. Most rutile nucleate and grow at the original textural position of its Ti-rich igneous parent mineral phase. The distribution of Mo content in rutile indicates that low-temperature (˜400-550°C), Mo-poor rutile (5.4 ± 1.1 ppm) is dominantly in the Mo-rich mafic wallrocks (high-grade ore), while high-temperature (˜550-700°C), Mo-rich rutile (186 ± 20 ppm) is found in the Mo-poor felsic porphyries (low-grade ore). Rutile from late dacite ring dikes is a notable exception to this distribution pattern. The Sb content in rutile from the high-temperature potassic core of the deposit to its low-temperature propylitic fringe remains relatively constant (35 ± 3 ppm). Temperature and Mo content of the hydrothermal fluids in addition to Mo/Ti ratio, modal abundance and stability of Ti-rich parental phases are key factors constraining Mo content and provenance in high-temperature (≥550°C) rutile. The initial Mo content of parent mineral phases is controlled by melt composition and oxygen fugacity as well as timing and efficiency of fluid-melt separation. Enhanced reduction of SO2-rich fluids and sulfide deposition in the Fe-rich mafic wallrocks influences the low-temperature (≤550°C) rutile chemistry. The data are consistent with a model of fluid circulation of hot (>550°C), oxidized (ƒO2 ≥ NNO + 1.3), SO2-rich and Mo-bearing fluids, likely exsolved from deeper crystallizing parts of the porphyry system and fluxed through the upper dacite porphyries and related structures, with metal deposition dominantly in the Fe-rich mafic wallrocks.

Pinhole-free growth of epitaxial CoSi.sub.2 film on Si(111)

NASA Technical Reports Server (NTRS)

Lin, True-Lon (Inventor); Fathauer, Robert W. (Inventor); Grunthaner, Paula J. (Inventor)

1991-01-01

Pinhole-free epitaxial CoSi.sub.2 films (14') are fabricated on (111)-oriented silicon substrates (10) with a modified solid phase epitaxy technique which utilizes (1) room temperature stoichiometric (1:2) codeposition of Co and Si followed by (2) room temperature deposition of an amorphous silicon capping layer (16), and (3) in situ annealing at a temperature ranging from about 500.degree. to 750.degree. C.

Electrical characterization of the temperature dependence in CdTe/CdS heterojunctions deposited in-situ by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Avila-Avendano, Jesus; Quevedo-Lopez, Manuel; Young, Chadwin

2018-02-01

The I-V and C-V characteristics of CdTe/CdS heterojunctions deposited in-situ by Pulsed Laser Deposition (PLD) were evaluated. In-situ deposition enables the study of the CdTe/CdS interface by avoiding potential impurities at the surface and interface as a consequence of exposure to air. The I-V and C-V characteristics of the resulting junctions were obtained at different temperatures, ranging from room temperature to 150 °C, where the saturation current (from 10-8 to 10-4 A/cm2), ideality factor (between 1 and 2), series resistance (from 102 to 105 Ω), built-in potential (0.66-0.7 V), rectification factor (˜106), and carrier concentration (˜1016 cm-3) were obtained. The current-voltage temperature dependence study indicates that thermionic emission is the main transport mechanism at the CdTe/CdS interface. This study also demonstrated that the built-in potential (Vbi) calculated using a thermionic emission model is more accurate than that calculated using C-V extrapolation since C-V plots showed a Vbi shift as a function of frequency. Although CdTe/CdS is widely used for photovoltaic applications, the parameters evaluated in this work indicate that CdTe/CdS heterojunctions could be used as rectifying diodes and junction field effect transistors (JFETs). JFETs require a low PN diode saturation current, as demonstrated for the CdTe/CdS junction studied here.

Effects of annealing on arrays of Ge nanocolumns formed by glancing angle deposition

NASA Astrophysics Data System (ADS)

Khare, C.; Gerlach, J. W.; Höche, T.; Fuhrmann, B.; Leipner, H. S.; Rauschenbach, B.

2012-10-01

Post-deposition thermal annealing of glancing angle deposited Ge nanocolumn arrays was carried out in a continuous Ar-flow at temperatures ranging from TA = 300 to 800 °C for different annealing durations. Morphological alterations and the recrystallization process induced by the thermal annealing treatment were investigated for the Ge nanocolumns deposited on planar and pre-patterned Si substrates. From X-ray diffraction (XRD) measurements, the films annealed at TA ≥ 500 °C were found to be polycrystalline. On planar Si substrates, at TA = 600 °C nanocolumns exhibited strong coarsening and merging, while a complete disintegration of the nanocolumns was detected at TA = 700 °C. The morphology of nanostructures deposited on pre-patterned substrates differs substantially, where the merging or column-disintegration effect was absent at elevated annealing temperatures. The two-arm-chevron nanostructures grown on pre-patterned substrates retained their complex shape and morphology, after extended annealing intervals. Investigations by transmission electron microscopy revealed nanocrystalline domains of the order of 5-30 nm (in diameter) present within the chevron structures after the annealing treatment.

Chemical vapor deposition of low reflective cobalt (II) oxide films

NASA Astrophysics Data System (ADS)

Amin-Chalhoub, Eliane; Duguet, Thomas; Samélor, Diane; Debieu, Olivier; Ungureanu, Elisabeta; Vahlas, Constantin

2016-01-01

Low reflective CoO coatings are processed by chemical vapor deposition from Co2(CO)8 at temperatures between 120 °C and 190 °C without additional oxygen source. The optical reflectivity in the visible and near infrared regions stems from 2 to 35% depending on deposition temperature. The combination of specific microstructural features of the coatings, namely a fractal ⿿cauliflower⿿ morphology and a grain size distribution more or less covering the near UV and IR wavelength ranges enhance light scattering and gives rise to a low reflectivity. In addition, the columnar morphology results in a density gradient in the vertical direction that we interpret as a refractive index gradient lowering reflectivity further down. The coating formed at 180 °C shows the lowest average reflectivity (2.9%), and presents an interesting deep black diffuse aspect.

Catalyst regeneration process including metal contaminants removal

DOEpatents

Ganguli, Partha S.

1984-01-01

Spent catalysts removed from a catalytic hydrogenation process for hydrocarbon feedstocks, and containing undesired metals contaminants deposits, are regenerated. Following solvent washing to remove process oils, the catalyst is treated either with chemicals which form sulfate or oxysulfate compounds with the metals contaminants, or with acids which remove the metal contaminants, such as 5-50 W % sulfuric acid in aqueous solution and 0-10 W % ammonium ion solutions to substantially remove the metals deposits. The acid treating occurs within the temperature range of 60.degree.-250.degree. F. for 5-120 minutes at substantially atmospheric pressure. Carbon deposits are removed from the treated catalyst by carbon burnoff at 800.degree.-900.degree. F. temperature, using 1-6 V % oxygen in an inert gas mixture, after which the regenerated catalyst can be effectively reused in the catalytic process.

Inter-diffusion of copper and hafnium as studied by x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Pearson, Justin; Chourasia, A. R.

The Cu/Hf interface has been characterized by x-ray photoelectron spectroscopy. Thin films (thicknesses ranging from 100 nm to 150 nm) of hafnium were deposited on a silicon substrate. About 80 nm of copper was then deposited on such samples. The e-beam method was used for the deposition. The samples were annealed for 30 min at temperatures of 100, 200, 300, 400, and 500°C. The inter-diffusion of copper and hafnium was investigated by sequential sputter depth profiling and x-ray photoelectron spectroscopy. The interdiffusion in each case was analyzed by the Matano-Boltzmann's procedure using the Fick's second law. The interdiffusion coefficients and the width of the interface as determined from the data have been correlated with the annealing temperature. Supported by Organized Research, TAMU-Commerce.

Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance

NASA Astrophysics Data System (ADS)

Pham, T. T.; Maréchal, A.; Muret, P.; Eon, D.; Gheeraert, E.; Rouger, N.; Pernot, J.

2018-04-01

Metal oxide semiconductor capacitors were fabricated using p - type oxygen-terminated (001) diamond and Al2O3 deposited by atomic layer deposition at two different temperatures 250 °C and 380 °C. Current voltage I(V), capacitance voltage C(V), and capacitance frequency C(f) measurements were performed and analyzed for frequencies ranging from 1 Hz to 1 MHz and temperatures from 160 K to 360 K. A complete model for the Metal-Oxide-Semiconductor Capacitors electrostatics, leakage current mechanisms through the oxide into the semiconductor and small a.c. signal equivalent circuit of the device is proposed and discussed. Interface states densities are then evaluated in the range of 1012eV-1cm-2 . The strong Fermi level pinning is demonstrated to be induced by the combined effects of the leakage current through the oxide and the presence of diamond/oxide interface states.

Nanostructure templating using low temperature atomic layer deposition

DOEpatents

Grubbs, Robert K [Albuquerque, NM; Bogart, Gregory R [Corrales, NM; Rogers, John A [Champaign, IL

2011-12-20

Methods are described for making nanostructures that are mechanically, chemically and thermally stable at desired elevated temperatures, from nanostructure templates having a stability temperature that is less than the desired elevated temperature. The methods comprise depositing by atomic layer deposition (ALD) structural layers that are stable at the desired elevated temperatures, onto a template employing a graded temperature deposition scheme. At least one structural layer is deposited at an initial temperature that is less than or equal to the stability temperature of the template, and subsequent depositions made at incrementally increased deposition temperatures until the desired elevated temperature stability is achieved. Nanostructure templates include three dimensional (3D) polymeric templates having features on the order of 100 nm fabricated by proximity field nanopatterning (PnP) methods.

Magnetic Nanostructures Patterned by Self-Organized Materials

DTIC Science & Technology

2016-01-05

solvent composition on the structural and magnetic properties of MnZn ferrite nanoparticles obtained by hydrothermal synthesis Microfluid...techniques such as chemical synthesis , self-organized methods, sputtering, lithography and atomic layer deposition (ALD). We also performed micromagnetic...range of temperatures (1.8 to 300 K) and at high fields (up to 5 T). The low temperature measurements of magnetic nanoparticles allowed us to

Localized phase change of VO2 films grown by atomic-layer deposition on InAlN/AlN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Downey, Brian P.; Wheeler, Virginia D.; Meyer, David J.

2017-06-01

We demonstrate the thermally actuated phase change of VO2 films formed by atomic layer deposition and subsequent thermal annealing on InAlN/AlN/GaN heterostructures. To locally raise the device temperature above the VO2 semiconductor-metal transition temperature, a two-dimensional electron gas formed within the InAlN/AlN/GaN heterostructure was used as an integrated resistive heater. An ON/OFF resistance ratio of nearly 103 was achieved for 50 nm VO2 films over a temperature range of 25 to 105 °C. The time required to switch the VO2 film from high- to low-resistance states was shown to depend on the applied heater power, with sub-microsecond transition times achieved.

Effect of substrate temperature and gas flow ratio on the nanocomposite TiAlBN coating

NASA Astrophysics Data System (ADS)

Rosli, Z. M.; Kwan, W. L.; Juoi, J. M.

2016-07-01

Nanocomposite TiAlBN (nc-TiAlBN) coatings were successfully deposited via RF magnetron sputtering by varying the nitrogen-to-total gas flow ratio (RN), and substrate temperature (TS). All coatings were deposited on AISI 316 substrates using single Ti-Al-BN hot-pressed disc as a target. The grain size, phases, and chemical composition of the coatings were evaluated using glancing angle X-ray diffraction analysis (GAXRD) and X-ray photoelectron spectroscopy (XPS). Results showed that the grains size of the deposited nc-TiAlBN coatings were in the range of 3.5 to 5.7 nm and reached a nitride saturation state as early as 15 % RN. As the nitrogen concentration decreases, boron concentration increased from 9 at.% to 16.17 at.%. and thus, increase the TiB2 phase within the coatings. The TS, however, showed no significant effect either on the crystallographic structure, grain size, or in the chemical composition of the deposited nc-TiAlBN coating.

Microthermometry of enargite-hosted fluid inclusions from the Lepanto, Philippines, high-sulfidation Cu sbnd Au deposit

NASA Astrophysics Data System (ADS)

Mancano, D. P.; Campbell, A. R.

1995-10-01

The spatial relation between porphyry and high-sulfidation epithermal deposits is particularly well revealed in the Mankayan mineral district of northern Luzon, Philippines, where the Lepanto high-sulfidation Cu sbnd Au deposit lies over and adjacent to the Far Southeast (FSE) porphyry Cu sbnd Au deposit. Consequently, a study was undertaken to characterize the fluids responsible for epithermal mineralization in this environment. The ore stage at Lepanto consists of enargite-luzonite (Cu 3AsS 4), pyrite, tennantite-tetrahedrite, and chalcopyrite. Infrared petrography of the enargite reveals variable transparency, with growth banding and twinning visible in euhedral specimens. Two phase (liquid > vapor) fluid inclusions occur as primary and secondary types ranging from <1 to 80 micrometers in length, with tabular, cylindrical, or oval shapes. Homogenization temperatures ( Th) of fluid inclusions in enargite were measured from within the lateral (3.0 km) and vertical (0.5 km) extent of the enargite mineralization. These values show a cooling trend toward the northwest, away from the area over the porphyry deposit, with average Th ranging from 285°C (proximal) to 166°C (distal). Ice melting temperatures ( Tm) were measured using a cycling technique, as ice was usually not visible in frozen inclusions. Apparent salinities range from 4.5 to 0.2 eq. wt% NaCl, with samples from the margins of the deposit showing a general decrease in apparent salinity with lower Th. Secondary fluid inclusions in quartz phenocrysts tend to have a higher average Th and lower apparent salinities compared to enargite-hosted inclusion fluids from the same locations. Several samples of pyrite are also transparent to IR radiation, and show internal features such as growth banding, and in one instance a two phase (liquid > vapor) fluid inclusion. This inclusion yielded a salinity of 1.2 eq. wt% NaCl. There is a large discrepancy in Th and apparent salinities between the enargite mineralization and the subjacent porphyry deposit despite contemporaneous formation, suggesting that the hot, (>500°C) hypersaline, magmatic brines associated with porphyry mineralization did not directly ascend to the elevation of the enargite deposit. However, absorbtion of magmatic vapors into overlying meteoric water may have created the mineralizing fluid of the Lepanto deposit. As this liquid moved to the northwest along the Lepanto fault, it was cooled and diluted by mixing with groundwater, resulting in enargite deposition.

Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: Their potential as a temperature sensor

NASA Astrophysics Data System (ADS)

Scoca, D.; Morales, M.; Merlo, R.; Alvarez, F.; Zanatta, A. R.

2015-05-01

Er-doped TiO2-xNx films were grown by Ar+ ion-beam sputtering a Ti + Er target under different N2 + O2 high-purity atmospheres. The compositional-structural properties of the samples were investigated after thermal annealing the films up to 1000 °C under a flow of oxygen. Sample characterization included x-ray photoelectron spectroscopy, grazing incidence x-ray diffraction, Raman scattering, and photoluminescence experiments. According to the experimental data, both composition and atomic structure of the samples were very sensitive to the growth conditions and annealing temperature. In the as-deposited form, the N-rich TiO2-xNx films presented TiN crystallites and no photoluminescence. As the thermal treatments proceed, the films were transformed into TiO2 and Er3+-related light emission were observed in the visible and near-infrared ranges at room-temperature. Whereas the development of TiO2 occurred due to the insertion-diffusion of oxygen in the films, light emission originated because of optical bandgap widening and/or structural-chemical variations in the vicinity of the Er3+ ions. Finally, the photoluminescence results in the visible range suggested the potential of the present samples in producing an optically based temperature sensor in the ˜150-500 K range.

Nanomechanical properties of platinum thin films synthesized by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamun, M.A.; Gu, D.; Baumgart, H.

2015-03-01

The nanomechanical properties of Pt thin films grown on Si (100) using atomic layer deposition (ALD) were investigated using nanoindentation. Recently, atomic layer deposition (ALD) has successfully demonstrated the capability to deposit ultra-thin films of platinum (Pt). Using (methylcyclopentadienyl) trimethylplatinum (MeCpPtMe3) as chemical platinum precursor and oxygen (O2) as the oxidizing agent, the ALD synthesis of Pt can be achieved with high conformity and excellent film uniformity. The ALD process window for Pt films was experimentally established in the temperature range between 270 °C and 320 °C, where the sheet conductance was constant over that temperature range, indicating stable ALDmore » Pt film growth rate. ALD growth of Pt films exhibits very poor nucleation and adhesion characteristics on bare Si surfaces when the native oxide was removed by 2% HF etch. Pt adhesion improves for thermally oxidized Si wafers and for Si wafers covered with native oxide. Three ALD Pt films deposited at 800, 900, and 1000 ALD deposition cycles were tested for the structural and mechanical properties. Additionally, the sample with 900 ALD deposition cycles was further annealed in forming gas (95% N2 and 5% H2) at 450 °C for 30 min in order to passivate dangling bonds in the grain boundaries of the polycrystalline Pt film. Cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscope (SEM) were employed to characterize the films' surface structure and morphology. Nanoindentation technique was used to evaluate the hardness and modulus of the ALD Pt films of various film thicknesses. The results indicate that the films depict comparable hardness and modulus results; however, the 800 and 1000 ALD deposition cycles films without forming gas annealing experienced significant amount of pileup, whereas the 900 ALD deposition cycles sample annealed in forming gas resulted in a smaller pileup.« less

Photoluminescence response of colloidal quantum dots on VO2 film across metal to insulator transition

PubMed Central

2014-01-01

We have proposed a method to probe metal to insulator transition in VO2 measuring photoluminescence response of colloidal quantum dots deposited on the VO2 film. In addition to linear luminescence intensity decrease with temperature that is well known for quantum dots, temperature ranges with enhanced photoluminescence changes have been found during phase transition in the oxide. Corresponding temperature derived from luminescence dependence on temperature closely correlates with that from resistance measurement during heating. The supporting reflectance data point out that photoluminescence response mimics a reflectance change in VO2 across metal to insulator transition. Time-resolved photoluminescence study did not reveal any significant change of luminescence lifetime of deposited quantum dots under metal to insulator transition. It is a strong argument in favor of the proposed explanation based on the reflectance data. PACS 71.30. + h; 73.21.La; 78.47.jd PMID:25404877

Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films

NASA Astrophysics Data System (ADS)

Jain, Pushkar; Juneja, Jasbir S.; Bhagwat, Vinay; Rymaszewski, Eugene J.; Lu, Toh-Ming; Cale, Timothy S.

2005-05-01

The effects of substrate heating on the stoichiometry and the electrical properties of pulsed dc reactively sputtered tantalum oxide films over a range of film thickness (0.14 to 5.4 μm) are discussed. The film stoichiometry, and hence the electrical properties, of tantalum oxide films; e.g., breakdown field, leakage current density, dielectric constant, and dielectric loss are compared for two different cases: (a) when no intentional substrate/film cooling is provided, and (b) when the substrate is water cooled during deposition. All other operating conditions are the same, and the film thickness is directly related to deposition time. The tantalum oxide films deposited on the water-cooled substrates are stoichiometric, and exhibit excellent electrical properties over the entire range of film thickness. ``Noncooled'' tantalum oxide films are stoichiometric up to ~1 μm film thickness, beyond that the deposited oxide is increasingly nonstoichiometric. The presence of partially oxidized Ta in thicker (>~1 μm) noncooled tantalum oxide films causes a lower breakdown field, higher leakage current density, higher apparent dielectric constant, and dielectric loss. The growth of nonstoichiometric tantalum oxide in thicker noncooled films is attributed to decreased surface oxygen concentration due to oxygen recombination and desorption at higher film temperatures (>~100 °C). The quantitative results presented reflect experience with a specific piece of equipment; however, the procedures presented can be used to characterize deposition processes in which film stoichiometry can change.

The synthesis of graphene at different deposition time from palm oil via thermal chemical vapor deposition

NASA Astrophysics Data System (ADS)

Salifairus, M. J.; Soga, T.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

The basic building of graphitic materials is graphene that can range from zero-dimensional to three-dimensional. Graphene is a single atomic layer of sp2 bonded carbon atoms. It becomes most potential new materials to replace silicon due to its fascinating properties. In this study, the graphene growth was observed at different deposition time. The 1cm x 1cm polycrystalline nickel substrate was cleaned by etching process. The palm oil, carbon source, was placed in the precursor furnace and the nickel substrate was placed in the second furnace (deposition furnace). The palm oil will mix with Argon and Hydrogen gas was used as carrier gas in the CVD under certain temperature and pressure to undergo pyrolysis process. The deposition temperature was set at 900 °C and the deposition time was varied from 5 - 60 minutes. The graphene was growth at ambient pressure in the CVD system. Raman spectrometer and atomic force microscopy revealed the structural properties and surface topography of the grapheme on the nickel substrate. The D, G and 2D band appear approximately at 1378 cm-1, 1580 cm-1 and 2696 cm-1. It can be concluded that the graphene has successfully synthesized at different deposition time.

Self-limiting atomic layer deposition of conformal nanostructured silver films

NASA Astrophysics Data System (ADS)

Golrokhi, Zahra; Chalker, Sophia; Sutcliffe, Christopher J.; Potter, Richard J.

2016-02-01

The controlled deposition of ultra-thin conformal silver nanoparticle films is of interest for applications including anti-microbial surfaces, plasmonics, catalysts and sensors. While numerous techniques can produce silver nanoparticles, few are able to produce highly conformal coatings on high aspect ratio surfaces, together with sub-nanometre control and scalability. Here we develop a self-limiting atomic layer deposition (ALD) process for the deposition of conformal metallic silver nanoparticle films. The films have been deposited using direct liquid injection ALD with ((hexafluoroacetylacetonato)silver(I)(1,5-cyclooctadiene)) and propan-1-ol. An ALD temperature window between 123 and 128 °C is identified and within this range self-limiting growth is confirmed with a mass deposition rate of ∼17.5 ng/cm2/cycle. The effects of temperature, precursor dose, co-reactant dose and cycle number on the deposition rate and on the properties of the films have been systematically investigated. Under self-limiting conditions, films are metallic silver with a nano-textured surface topography and nanoparticle size is dependent on the number of ALD cycles. The ALD reaction mechanisms have been elucidated using in-situ quartz crystal microbalance (QCM) measurements, showing chemisorption of the silver precursor, followed by heterogeneous catalytic dehydrogenation of the alcohol to form metallic silver and an aldehyde.

Estimation of hydrogen deposition velocities from 1995-2008 at Mace Head, Ireland using a simple box model and concurrent ozone depositions

NASA Astrophysics Data System (ADS)

Simmonds, P. G.; Derwent, R. G.; Manning, A. J.; Grant, A.; O'Doherty, S.; Spain, T. G.

2011-02-01

During stable nocturnal inversions with low wind speeds, we observed strong depletions of both hydrogen and ozone caused by deposition to the peat bogs in the vicinity of the Mace Head Atmospheric Research Station, Connemara, County Galway, Ireland. From these temporally correlated fluxes and using a simple box model, we have estimated the strength of the molecular hydrogen soil sink over a 14-yr period (1995-2008). Over this entire period 269 nocturnal deposition events were identified that satisfied the strict selection criteria. The average hydrogen deposition velocity determined from these events was 0.53 mm s-1, covering a range of 0.18-1.29 mm s-1, which is in agreement with the range of deposition velocities reported in the literature for similar peaty biomes. By annually averaging all of the nocturnal inversion events over the most seasonally active period from April-September we reveal a positive correlation with ambient temperature in the relative deposition velocities of hydrogen and ozone, which is not readily apparent in all of the individual events. Furthermore, average hydrogen deposition velocities and accumulated rainfall from 48 h before and during each event were to a reasonable extent anti-correlated. However, due to the large uncertainties in determining monthly mean H2 deposition velocities there is no statistically significant trend in the hydrogen deposition velocities over time.

Silicon nitride films deposited with an electron beam created plasma

NASA Technical Reports Server (NTRS)

Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

1984-01-01

The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

Kinetic and microstructural study of titanium nitride deposited by laser chemical vapor deposition

NASA Astrophysics Data System (ADS)

Egland, Keith Maynard

Titanium nitride (TiN) films were deposited onto Ti-6Al-4V substrates by laser chemical vapor deposition using a cw COsb2 laser and TiClsb4,\\ Nsb2, and Hsb2 reactant gases. In-situ laser induced fluorescence (LIF) and multi-wavelength pyrometry determined relative titanium gas phase atomic number density and deposition temperature, respectively. Deposited films were yellow to gold in color. Transmission electron microscopy on one sample revealed a face-centered cubic structure with a lattice parameter (0.4237 nm) expected for TiN. Auger electron spectroscopy found substoichiometric compositions with a N/Ti ratio between 0.7 and 0.9. Variables decreasing grain size (lower temperature, higher TiClsb4 input) decreased the N/Ti ratio. Higher Nsb2 input increased stoichiometry, while larger Hsb2 input decreased stoichiometry. The deposit substoichiometry is believed to be caused by diffusion of nitrogen through TiN grain boundaries to the titanium alloy substrate. The morphology starts as a dense polycrystalline structure evolving into a columnar structure having facets or nodules at the surface with crystallite sizes ranging from 10-1000 nm. TiClsb4 input had a inverse correlation with crystallite size, while Nsb2:Hsb2 ratio had minimal effect; the crystallite size (G) varied exponentially with temperature (T) for a given irradiation time, i.e., G = C exp (-28000/T), with constant C reflecting substrate roughness and gas composition. Microhardness tests revealed substrate contributions; nevertheless, films appeared to have a minimum hardness of 2000 Hsbv. The deposition apparent activation energy was calculated as 122 ± 9 kJ/mole using growth rates measured by film height and 117 ± 23 kJ/mole using growth rates measured by LIF signals. This puts the process in the surface kinetic growth regime over the temperature range 1370-1610 K. Above Nsb2 and Hsb2 levels of 1.25% and below TiClsb4 input of 4.5%, the growth rate has a half-order dependence on nitrogen and a linear dependence on hydrogen and is approximated by$r = {{kPsb{TiClsb4}Psb{Hsb2}Psbsp{Nsb2}{1/2}exp≤ft({{-}Esb{a}/ {RT}right)}/{1 + Psb{Ar}}}}.Since nitrogen positively affects growth rate (when added to a TiClsb4+Hsb2 mixture), stepwise reduction of TiClsb4 to Ti by hydrogen does not occur. NHsb{x} complexes are clearly involved in the growth mechanism; a likely combination of rate determining steps is the formation of NH and the initial reduction of TiClsb4$ by hydrogen.

Catalytic combustion of residual fuels

NASA Technical Reports Server (NTRS)

Bulzan, D. L.; Tacina, R. R.

1981-01-01

A noble metal catalytic reactor was tested using two grades of petroleum derived residual fuels at specified inlet air temperatures, pressures, and reference velocities. Combustion efficiencies greater than 99.5 percent were obtained. Steady state operation of the catalytic reactor required inlet air temperatures of at least 800 K. At lower inlet air temperatures, upstream burning in the premixing zone occurred which was probably caused by fuel deposition and accumulation on the premixing zone walls. Increasing the inlet air temperature prevented this occurrence. Both residual fuels contained about 0.5 percent nitrogen by weight. NO sub x emissions ranged from 50 to 110 ppm by volume at 15 percent excess O2. Conversion of fuel-bound nitrogen to NO sub x ranged from 25 to 50 percent.

Temperature-dependent nucleation and capture-zone scaling of C 60 on silicon oxide

NASA Astrophysics Data System (ADS)

Groce, M. A.; Conrad, B. R.; Cullen, W. G.; Pimpinelli, A.; Williams, E. D.; Einstein, T. L.

2012-01-01

Submonolayer films of C 60 have been deposited on ultrathin SiO 2 films for the purpose of characterizing the initial stages of nucleation and growth as a function of temperature. Capture zones extracted from the initial film morphology were analyzed using both the gamma and generalized Wigner distributions. The calculated critical nucleus size i of the C 60 islands was observed to change over the temperature range 298 K to 483 K. All fitted values of i were found to be between 0 and 1, representing stable monomers and stable dimers, respectively. With increasing temperature of film preparation, we observed i first increasing through this range and then decreasing. We discuss possible explanations of this reentrant-like behavior.

The Effect of Deposition Conditions on Adhesion Strength of Ti and Ti6Al4V Cold Spray Splats

NASA Astrophysics Data System (ADS)

Goldbaum, Dina; Shockley, J. Michael; Chromik, Richard R.; Rezaeian, Ahmad; Yue, Stephen; Legoux, Jean-Gabriel; Irissou, Eric

2012-03-01

Cold spray is a complex process where many parameters have to be considered in order to achieve optimized material deposition and properties. In the cold spray process, deposition velocity influences the degree of material deformation and material adhesion. While most materials can be easily deposited at relatively low deposition velocity (<700 m/s), this is not the case for high yield strength materials like Ti and its alloys. In the present study, we evaluate the effects of deposition velocity, powder size, particle position in the gas jet, gas temperature, and substrate temperature on the adhesion strength of cold spayed Ti and Ti6Al4V splats. A micromechanical test technique was used to shear individual splats of Ti or Ti6Al4V and measure their adhesion strength. The splats were deposited onto Ti or Ti6Al4V substrates over a range of deposition conditions with either nitrogen or helium as the propelling gas. The splat adhesion testing coupled with microstructural characterization was used to define the strength, the type and the continuity of the bonded interface between splat and substrate material. The results demonstrated that optimization of spray conditions makes it possible to obtain splats with continuous bonding along the splat/substrate interface and measured adhesion strengths approaching the shear strength of bulk material. The parameters shown to improve the splat adhesion included the increase of the splat deposition velocity well above the critical deposition velocity of the tested material, increase in the temperature of both powder and the substrate material, decrease in the powder size, and optimization of the flow dynamics for the cold spray gun nozzle. Through comparisons to the literature, the adhesion strength of Ti splats measured with the splat adhesion technique correlated well with the cohesion strength of Ti coatings deposited under similar conditions and measured with tubular coating tensile (TCT) test.

Rapid Tooling for Functional Prototype of Metal Mold Processes Final Report CRADA No. TC-1032-98

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heestand, G.; Jaskolski, T.

Production inserts for die-casting were generally fabricated from materials with sufficient strength and· good wear properties at casting temperatures for long life. Frequently tool steels were used and machining was done with a combination of. conventional and Electric Discharge Machining (EDM) with some handwork, an expensive and time consuming process, partilly for prototype work. We proposed electron beam physical vapor deposition (EBPVD) as a process for rapid fabrication of dies. Metals, ranging from low melting point to refractory metals (Ta, Mo, etc.), would be evaporated and deposited at high rates (-2mm/hr.). Alloys could be easily evaporated and deposited if theirmore » constituent vapor pressures were similar and with more difficulty if they were not. Of course, layering of different materials was possible if required for a specific application. For example, a hard surface layer followed by a tough steel and backed by a high thermal conductivity (possibly cooled) copper layer could be fabricated. Electron-beam deposits exhibited 100% density and lull strength when deposited at a substrate (mandrel) temperature that was a substantial fraction of the deposited material's melting point. There were several materials that could have the required high temperature properties and ease of fabrication required for such a mandrel. We had successfully used graphite, machined from free formed objects with a replicator, to produce aluminum-bronze test molds. There were several parting layer materials of interest, but the ideal material depended upon the specific application.« less

Electrical properties of multilayer (DLC-TiC) films produced by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Alawajji, Raad A.; Kannarpady, Ganesh K.; Nima, Zeid A.; Kelly, Nigel; Watanabe, Fumiya; Biris, Alexandru S.

2018-04-01

In this work, pulsed laser deposition was used to produce a multilayer diamond like carbon (ML (DLC-TiC)) thin film. The ML (DLC-TiC) films were deposited on Si (100) and glass substrates at various substrate temperatures in the range of 20-450 °C. Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy were utilized to characterize the prepared films. Raman analysis revealed that as the substrate temperature increased, the G-peak position shifted to a higher raman shift and the full width at half maximum of the G and D bands decreased. XPS analysis indicated a decrease in sp3/sp2 ratio and an increase in Ti-C bond intensity when the substrate temperature was increased. Additionally, the surface roughness of ML (DLC-TiC) filmswas affected by the type and temperature of the substrate. The electrical measurement results indicated that the electrical resistivity of the ML (DLC-TiC) film deposited on Si and glass substrates showed the same behavior-the resistivity decreased when substrate temperature increased. Furthermore, the ML (DLC-TiC) films deposited on silicon showed lower electrical resistivity, dropping from 8.39E-4 Ω-cm to 5.00E-4 Ω-cm, and, similarly, the films on the glass substrate displayed a drop in electrical resistivity from 1.8E-2 Ω-cm to 1.2E-3 Ω-cm. These enhanced electrical properties indicate that the ML (DLC-TiC) films have widespread potential as transducers for biosensors in biological research; electrochemical electrodes, because these films can be chemically modified; biocompatible coatings for medicals tools; and more.

Influence of substrate metal alloy type on the properties of hydroxyapatite coatings deposited using a novel ambient temperature deposition technique.

PubMed

Barry, J N; Cowley, A; McNally, P J; Dowling, D P

2014-03-01

Hydroxyapatite (HA) coatings are applied widely to enhance the level of osteointegration onto orthopedic implants. Atmospheric plasma spray (APS) is typically used for the deposition of these coatings; however, HA crystalline changes regularly occur during this high-thermal process. This article reports on the evaluation of a novel low-temperature (<47°C) HA deposition technique, called CoBlast, for the application of crystalline HA coatings. To-date, reports on the CoBlast technique have been limited to titanium alloy substrates. This study addresses the suitability of the CoBlast technique for the deposition of HA coatings on a number of alternative metal alloys utilized in the fabrication of orthopedic devices. In addition to titanium grade 5, both cobalt chromium and stainless steel 316 were investigated. In this study, HA coatings were deposited using both the CoBlast and the plasma sprayed techniques, and the resultant HA coating and substrate properties were evaluated and compared. The CoBlast-deposited HA coatings were found to present similar surface morphologies, interfacial properties, and composition irrespective of the substrate alloy type. Coating thickness however displayed some variation with the substrate alloy, ranging from 2.0 to 3.0 μm. This perhaps is associated with the electronegativity of the metal alloys. The APS-treated samples exhibited evidence of both coating, and significantly, substrate phase alterations for two metal alloys; titanium grade 5 and cobalt chrome. Conversely, the CoBlast-processed samples exhibited no phase changes in the substrates after depositions. The APS alterations were attributed to the brief, but high-intensity temperatures experienced during processing. Copyright © 2013 Wiley Periodicals, Inc.

Ultra Uniform Pb0.865La0.09(Zr0.65Ti0.35)O3 Thin Films with Tunable Optical Properties Fabricated via Pulsed Laser Deposition

PubMed Central

Jiang, Shenglin; Huang, Chi; Gu, Honggang; Liu, Shiyuan; Zhu, Shuai; Li, Ming-Yu; Yao, Lingmin; Wu, Yunyi; Zhang, Guangzu

2018-01-01

Ferroelectric thin films have been utilized in a wide range of electronic and optical applications, in which their morphologies and properties can be inherently tuned by a qualitative control during growth. In this work, we demonstrate the evolution of the Pb0.865La0.09(Zr0.65Ti0.35)O3 (PLZT) thin films on MgO (200) with high uniformity and optimized optical property via the controls of the deposition temperatures and oxygen pressures. The perovskite phase can only be obtained at the deposition temperature above 700 °C and oxygen pressure over 50 Pa due to the improved crystallinity. Meanwhile, the surface morphologies gradually become smooth and compact owing to spontaneously increased nucleation sites with the elevated temperatures, and the crystallization of PLZT thin films also sensitively respond to the oxygen vacancies with the variation of oxygen pressures. Correspondingly, the refractive indices gradually develop with variations of the deposition temperatures and oxygen pressures resulted from the various slight loss, and the extinction coefficient for each sample is similarly near to zero due to the relatively smooth morphology. The resulting PLZT thin films exhibit the ferroelectricity, and the dielectric constant sensitively varies as a function of electric filed, which can be potentially applied in the electronic and optical applications. PMID:29596398

Thermoelectric properties of in-situ plasma spray synthesized sub-stoichiometry TiO 2-x

DOE PAGES

Lee, Hwasoo; Han, Su Jung; Seshadri, Ramachandran Chidambaram; ...

2016-11-04

The thermoelectric properties of sub-stoichiometric TiO 2-x deposits produced by cascaded-plasma spray process are investigated from room-temperature to 750 K. Sub-stoichiometric TiO 2-x deposits are formed through in-situ reaction of the TiO 1.9 within the high temperature plasma flame and manipulated through introduction of varying amounts of hydrogen in the plasma. Although the TiO 2-x particles experience reduction within plasma, it can also re-oxidize through interaction with the surrounding ambient atmosphere, resulting in a complex interplay between process conditions and stoichiometry. The deposits predominantly contain rutile phase with presence of Magneli phases especially under significantly reducing plasma conditions. The resultantmore » deposits show sensitivity to thermoelectric properties and under certain optimal conditions repeatedly show Seebeck coefficients reaching values of -230 μV K -1 at temperatures of 750 K while providing an electrical conductivity of 5.48 × 10 3 S m -1, relatively low thermal conductivity in the range of 1.5 to 2 W m -1 K -1 resulting in power factor of 2.9 μW cm -1 K -2. The resultant maximum thermoelectric figure of merit value reached 0.132 under these optimal conditions. Lastly, the results point to a potential pathway for a large-scale fabrication of low-cost oxide based thermoelectric with potential applicability at moderate to high temperatures.« less

Thermoelectric properties of in-situ plasma spray synthesized sub-stoichiometry TiO 2-x

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Hwasoo; Han, Su Jung; Seshadri, Ramachandran Chidambaram

The thermoelectric properties of sub-stoichiometric TiO 2-x deposits produced by cascaded-plasma spray process are investigated from room-temperature to 750 K. Sub-stoichiometric TiO 2-x deposits are formed through in-situ reaction of the TiO 1.9 within the high temperature plasma flame and manipulated through introduction of varying amounts of hydrogen in the plasma. Although the TiO 2-x particles experience reduction within plasma, it can also re-oxidize through interaction with the surrounding ambient atmosphere, resulting in a complex interplay between process conditions and stoichiometry. The deposits predominantly contain rutile phase with presence of Magneli phases especially under significantly reducing plasma conditions. The resultantmore » deposits show sensitivity to thermoelectric properties and under certain optimal conditions repeatedly show Seebeck coefficients reaching values of -230 μV K -1 at temperatures of 750 K while providing an electrical conductivity of 5.48 × 10 3 S m -1, relatively low thermal conductivity in the range of 1.5 to 2 W m -1 K -1 resulting in power factor of 2.9 μW cm -1 K -2. The resultant maximum thermoelectric figure of merit value reached 0.132 under these optimal conditions. Lastly, the results point to a potential pathway for a large-scale fabrication of low-cost oxide based thermoelectric with potential applicability at moderate to high temperatures.« less

Hybrid Physical-Chemical Vapor Deposition of Bi2Se3 Thin films on Sapphire

NASA Astrophysics Data System (ADS)

Brom, Joseph; Ke, Yue; Du, Renzhong; Gagnon, Jarod; Li, Qi; Redwing, Joan

2012-02-01

High quality thin films of topological insulators continue to garner much interest. We report on the growth of highly-oriented thin films of Bi2Se3 on c-plane sapphire using hybrid physical-chemical vapor deposition (HPCVD). The HPCVD process utilizes the thermal decomposition of trimethyl bismuth (TMBi) and evaporation of elemental selenium in a hydrogen ambient to deposit Bi2Se3. Growth parameters including TMBi flow rate and decomposition temperature and selenium evaporation temperature were optimized, effectively changing the Bi:Se ratio, to produce high quality films. Glancing angle x- ray diffraction measurements revealed that the films were c-axis oriented on sapphire. Trigonal crystal planes were observed in atomic force microscopy images with an RMS surface roughness of 1.24 nm over an area of 2μmx2μm. Variable temperature Hall effect measurements were also carried out on films that were nominally 50-70 nm thick. Over the temperature range from 300K down to 4.2K, the carrier concentration remained constant at approximately 6x10^18 cm-3 while the mobility increased from 480 cm^2/Vs to 900 cm^2/Vs. These results demonstrate that the HPCVD technique can be used to deposit Bi2Se3 films with structural and electrical properties comparable to films produced by molecular beam epitaxy.

Temperature dependent barrier height and ideality factor of electrodeposited n-CdSe/Cu Schottky barrier diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahato, S., E-mail: som.phy.ism@gmail.com; Shiwakoti, N.; Kar, A. K.

2015-06-24

This article reports the measurement of temperature-dependent barrier height and ideality factor of n-CdSe/Cu Schottky barrier diode. The Cadmium Selenide (CdSe) thin films have been deposited by simple electrodeposition technique. The XRD measurements ravels the deposited single phase CdSe films are highly oriented on (002) plane and the average particle size has been calculated to be ~18 nm. From SEM characterization, it is clear that the surface of CdSe thin films are continuous, homogeneous and the film is well adhered to the substrate and consists of fine grains which are irregular in shape and size. Current-Voltage characteristics have been measured atmore » different temperatures in the range (298 K – 353 K). The barrier height and ideality factor are found to be strongly temperature dependent. The inhomogenious barrier height increases and ideality factor decreases with increase in temperature. The expectation value has been calculated and its value is 0.30 eV.« less

40Ar/39Ar Dating of Zn-Pb-Ag Mineralization in the Northern Brooks Range, Alaska

USGS Publications Warehouse

Werdon, Melanie B.; Layer, Paul W.; Newberry, Rainer J.

2004-01-01

The 40Ar/39Ar laser step-heating method potentially can be used to provide absolute ages for a number of formerly undatable, low-temperature ore deposits. This study demonstrates the use of this method by determining absolute ages for Zn-Pb-Ag sediment-hosted massive sulfide deposits and vein-breccia occurrences found throughout a 300-km-long, east-west-trending belt in the northern Brooks Range, Alaska. Massive sulfide deposits are hosted by Mississippian to Pennsylvanian(?) black carbonaceous shale, siliceous mudstone, and lesser chert and carbonate turbidites of the Kuna Formation (e.g., Red Dog, Anarraaq, Lik (Su), and Drenchwater). The vein-breccia occurrences (e.g., Husky, Story Creek, West Kivliktort Mountain, Vidlee, and Kady) are hosted by a deformed but only weakly metamorphosed package of Upper Devonian to Lower Mississippian mixed continental and marine clastic rocks (the Endicott Group) that stratigraphically underlie the Kuna Formation. The vein-breccias are mineralogically similar to, but not spatially associated with, known massive sulfide deposits. The region's largest shale-hosted massive sulfide deposit is Red Dog; it has reserves of 148 Mt grading 16.6 percent zinc, 4.5 percent lead, and 77 g of silver per tonne. Hydrothermally produced white mica in a whole-rock sample from a sulfide-bearing igneous sill within the Red Dog deposit yielded a plateau age of 314.5 Ma. The plateau age of this whole-rock sample records the time at which temperatures cooled below the argon closure temperature of the white mica and is interpreted to represent the minimum age limit for massive sulfide-related hydrothermal activity in the Red Dog deposit. Sulfide-bearing quartz veins at Drenchwater crosscut a hypabyssal intrusion with a maximum biotite age of 337.0 Ma. Despite relatively low sulfide deposition temperatures in the vein-breccia occurrences (162°-251°C), detrital white mica in sandstone immediately adjacent to large vein-breccia zones was partially to completely recrystallized. The 40Ar/39Ar age spectra and inverse isochron plots of the multicomponent whole-rock sandstone samples are more complex than those of single minerals. However, different minerals have different Ca/K and Cl/K ratios and closure temperatures, and these properties were used to identify portions of spectra dominated by argon release from specific minerals. 40Ar/39Ar laser step-heating analyses of Late Devonian sandstone whole rocks produced spectra that record a two-stage resetting history: a Carboniferous hydrothermal event first and later Mesozoic to Tertiary events, which are in agreement with geologic constraints. The 40Ar/39Ar ages and the similar mineralogy, lead isotope composition, and relative stratigraphic positions support the interpretation that the shale-hosted massive sulfide deposits and most vein-breccia occurrences are temporally and genetically related, and that they are different expressions of Carboniferous basinal dewatering.

Superhard self-lubricating AlMgB14 films for microelectromechanical devices

NASA Astrophysics Data System (ADS)

Tian, Y.; Bastawros, A. F.; Lo, C. C. H.; Constant, A. P.; Russell, A. M.; Cook, B. A.

2003-10-01

Performance and reliability of microelectromechanical system (MEMS) components can be enhanced dramatically through the incorporation of protective thin-film coatings. Current-generation MEMS devices prepared by the lithographie-galvanoformung-abformung (LIGA) technique employ transition metals such as Ni, Cu, Fe, or alloys thereof, and hence lack stability in oxidizing, corrosive, and/or high-temperature environments. Fabrication of a superhard self-lubricating coating based on a ternary boride compound AlMgB14 described in this letter has great potential in protective coating technology for LIGA microdevices. Nanoindentation tests show that the hardness of AlMgB14 films prepared by pulsed laser deposition ranges from 45 GPa to 51 GPa, when deposited at room temperature and 573 K, respectively. Extremely low friction coefficients of 0.04-0.05, which are thought to result from a self-lubricating effect, have also been confirmed by nanoscratch tests on the AlMgB14 films. Transmission electron microscopy studies show that the as-deposited films are amorphous, regardless of substrate temperature; however, analysis of Fourier transform infrared spectra suggests that the higher substrate temperature facilitates the formation of the B12 icosahedral framework, therefore leading to the higher hardness.

High-Throughput Characterization of Vapor-Deposited Organic Glasses

NASA Astrophysics Data System (ADS)

Dalal, Shakeel S.

Glasses are non-equilibrium materials which on short timescales behave like solids, and on long timescales betray their liquid-like structure. The most common way of preparing a glass is to cool the liquid faster than it can structurally rearrange. Until recently, most preparation schemes for a glass were considered to result in materials with undifferentiable structure and properties. This thesis utilizes a particular preparation method, physical vapor deposition, in order to prepare glasses of organic molecules with properties otherwise considered to be unobtainable. The glasses are characterized using spectroscopic ellipsometry, both as a dilatometric technique and as a reporter of molecular packing. The results reported here develop ellipsometry as a dilatometric technique on a pair of model glass formers, alpha,alpha,beta-trisnaphthylbenzene and indomethacin. It is found that the molecular orientation, as measured by birefringence, can be tuned by changing the substrate temperature during the deposition. In order to efficiently characterize the properties of vapor-deposited indomethacin as a function of substrate temperature, a high-throughput method is developed to capture the entire interesting range of substrate temperatures in just a few experiments. This high-throughput method is then leveraged to describe molecular mobility in vapor-deposited indomethacin. It is also used to demonstrate that the behavior of organic semiconducting molecules agrees with indomethacin quantitatively, and this agreement has implications for emerging technologies such as light-emitting diodes, photovoltaics and thin-film transistors made from organic molecules.

Deposit formation and heat transfer in hydrocarbon rocket fuels

NASA Technical Reports Server (NTRS)

Giovanetti, A. J.; Spadaccini, L. J.; Szetela, E. J.

1983-01-01

An experimental research program was undertaken to investigate the thermal stability and heat transfer characteristics of several hydrocarbon fuels under conditions that simulate high-pressure, rocket engine cooling systems. The rates of carbon deposition in heated copper and nickel-plated copper tubes were determined for RP-1, propane, and natural gas using a continuous flow test apparatus which permitted independent variation and evaluation of the effect on deposit formation of wall temperature, fuel pressure, and fuel velocity. In addition, the effects of fuel additives and contaminants, cryogenic fuel temperatures, and extended duration testing with intermittent operation were examined. Parametric tests to map the thermal stability characteristics of RP-1, commercial-grade propane, and natural gas were conducted at pressures of 6.9 to 13.8 MPa, bulk fuel velocities of 30 to 90 m/s, and tube wall temperatures in the range of 230 to 810 K. Also, tests were run in which propane and natural gas fuels were chilled to 230 and 160 K, respectively. Corrosion of the copper tube surface was detected for all fuels tested. Plating the inside of the copper tubes with nickel reduced deposit formation and eliminated tube corrosion in most cases. The lowest rates of carbon deposition were obtained for natural gas, and the highest rates were obtained for propane. For all fuels tested, the forced-convection heat transfer film coefficients were satisfactorily correlated using a Nusselt-Reynolds-Prandtl number equation.

Ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

NASA Astrophysics Data System (ADS)

Sillassen, M.; Eklund, P.; Sridharan, M.; Pryds, N.; Bonanos, N.; Bøttiger, J.

2009-05-01

Thermally stable, stoichiometric, cubic yttria-stabilized zirconia (YSZ) thin-film electrolytes have been synthesized by reactive pulsed dc magnetron sputtering from a Zr-Y (80/20 at. %) alloy target. Films deposited at floating potential had a ⟨111⟩ texture. Single-line profile analysis of the 111 x-ray diffraction peak yielded a grain size of ˜20 nm and a microstrain of ˜2% regardless of deposition temperature. Films deposited at 400 °C and selected bias voltages in the range from -70 to -200 V showed a reduced grain size for higher bias voltages, yielding a grain size of ˜6 nm and a microstrain of ˜2.5% at bias voltages of -175 and -200 V with additional incorporation of argon. The films were thermally stable; very limited grain coarsening was observed up to an annealing temperature of 800 °C. Temperature-dependent impedance spectroscopy analysis of the YSZ films with Ag electrodes showed that the in-plane ionic conductivity was within one order of magnitude higher in films deposited with substrate bias corresponding to a decrease in grain size compared to films deposited at floating potential. This suggests that there is a significant contribution to the ionic conductivity from grain boundaries. The activation energy for oxygen ion migration was determined to be between 1.14 and 1.30 eV.

Ion beam sputter deposited zinc telluride films

NASA Technical Reports Server (NTRS)

Gulino, D. A.

1986-01-01

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Fahlore and Sphalerite from the Darasun Gold Deposit in the Eastern Transbaikal Region, Russia: I. Mineral Assemblages and Intergrowths, Chemical Composition, and Its Evolution

NASA Astrophysics Data System (ADS)

Lyubimtseva, N. G.; Bortnikov, N. S.; Borisovsky, S. E.; Prokofiev, V. Yu.; Vikent'eva, O. V.

2018-03-01

The mineral assemblages, mode of occurrence, and chemical compositions of coexisting fahlore and sphalerite from the Darasun gold deposit have been described. Three generations of fahlore and three generations of sphalerite have been recognized. The FeS content in sphalerite coexisting with fahlore ranges from 0.8 to 9.4 mol %. The complete solid solution series Fe-tetrahedrite-Zn-tetrahedrite-Fe-tennantite-Zn-tennantite reflected in Sb/(Sb + As) and Fe/(Fe + Zn) ratios ranging from 0 to 0.97 and from 0.07 to 1.00, respectively, with a predominant negative relationship between these ratios has been identified for the first time at the deposit. Stepped, oscillatory, and combined stepped-oscillatory growth zonings within fahlore grains and heterogeneous aggregates of fahlore have been found. Fahlore is enriched in As with respect to Sb, and Zn-tetrahedrite is followed by Fe- and Zn-tennantite from early to late generation; Zn-tetrahedrite is followed by Fe-tennantite in zoned grains and overgrown rims; sphalerite crystallized at decreased temperature and sulfur fugacity. The evolution of the chemical composition of fahlores was caused by the evolving temperature, fluid salinity, and conditions of metal migration.

Reversible phase transition in vanadium oxide films sputtered on metal substrates

NASA Astrophysics Data System (ADS)

Palai, Debajyoti; Carmel Mary Esther, A.; Porwal, Deeksha; Pradeepkumar, Maurya Sandeep; Raghavendra Kumar, D.; Bera, Parthasarathi; Sridhara, N.; Dey, Arjun

2016-11-01

Vanadium oxide films, deposited on aluminium (Al), titanium (Ti) and tantalum (Ta) metal substrates by pulsed RF magnetron sputtering at a working pressure of 1.5 x10-2 mbar at room temperature are found to display mixed crystalline vanadium oxide phases viz., VO2, V2O3, V2O5. The films have been characterized by field-emission scanning electron microscopy, X-ray diffraction, differential scanning calorimetry (DSC) and X-ray photoelectron spectroscopy, and their thermo-optical and electrical properties have been investigated. Studies of the deposited films by DSC have revealed a reversible-phase transition found in the temperature range of 45-49 °C.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.

Here, we investigate the growth phase diagram of pseudobrookite Fe 2TiO 5 epitaxial thin films on LaAlO 3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe 2O 3, making Fe 2TiO 5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe 2TiO 5 in oxide heterostructures for photocatalytic and photoelectrochemicalmore » applications.« less

The influence of scale inhibitors on calcium oxalate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gill, J.S.

1999-11-01

Precipitation of calcium oxalate is a common occurrence in mammalian urinary tract deposits and in various industrial processes such as paper making, brewery fermentation, sugar evaporation, and tannin concentration. Between pH 3.5 to 4.5 the driving force for calcium oxalate precipitation increases almost by three fold. It is a complicated process to predict both the nature of a deposit and at which stage of a multi-effect evaporator a particular mineral will deposit, as this depends on temperature, pH, total solids, and kinetics of mineralization. It is quite a challenge to inhibit calcium oxalate precipitation in the pH range of 4--6.more » Al{sup 3+} ions provide excellent threshold inhibition in this pH range and can be used to augment traditional inhibitors such as polyphosphates and polycarboxylates.« less

Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

DOE PAGES

Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; ...

2014-11-05

Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC 5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC 5 composite at the laser wavelength, and the pulse-width dependencemore » is attributed to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.« less

Purification of Nanoscale Electron-Beam-Induced Platinum Deposits via a Pulsed Laser-Induced Oxidation Reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon

Platinum–carbon deposits made via electron-beam-induced deposition were purified in this study via a pulsed laser-induced oxidation reaction and erosion of the amorphous carbon to form pure platinum. Purification proceeds from the top down and is likely catalytically facilitated via the evolving platinum layer. Thermal simulations suggest a temperature threshold of ~485 K, and the purification rate is a function of the PtC 5 thickness (80–360 nm) and laser pulse width (1–100 μs) in the ranges studied. The thickness dependence is attributed to the ~235 nm penetration depth of the PtC 5 composite at the laser wavelength, and the pulse-width dependencemore » is attributed to the increased temperatures achieved at longer pulse widths. Finally, remarkably fast purification is realized at cumulative laser exposure times of less than 1 s.« less

Residual stress in thick low-pressure chemical-vapor deposited polycrystalline SiC coatings on Si substrates

NASA Astrophysics Data System (ADS)

Choi, D.; Shinavski, R. J.; Steffier, W. S.; Spearing, S. M.

2005-04-01

Residual stress in thick coatings of polycrystalline chemical-vapor deposited SiC on Si substrates is a key variable that must be controlled if SiC is to be used in microelectromechanical systems. Studies have been conducted to characterize the residual stress level as a function of deposition temperature, Si wafer and SiC coating thickness, and the ratios of methyltrichlorosilane to hydrogen and hydrogen chloride. Wafer curvature was used to monitor residual stress in combination with a laminated plate analysis. Compressive intrinsic (growth) stresses were measured with magnitudes in the range of 200-300MPa; however, these can be balanced with the tensile stress due to the thermal-expansion mismatch to leave near-zero stress at room temperature. The magnitude of the compressive intrinsic stress is consistent with previously reported values of surface stress in combination with the competition between grain-boundary energy and elastic strain energy.

Influence of substrate temperature and post annealing of CuGaO{sub 2} thin films on optical and structural properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakar, Muhammad Hafiz Abu; Li, Lam Mui; Salleh, Saafie

A transparent p-type thin film CuGaO{sub 2} was deposited by using RF sputtering deposition method on plastic (PET) and glass substrate. The characteristics of the film is investigated. The thin film was deposited at temperature range from 50-250°C and the pressure inside the chamber is 1.0×10{sup −2} Torr and Argon gas was used as a working gas. The RF power is set to 100 W. The thickness of thin film is 300nm. In this experiment the transparency of the thin film is more than 70% for the visible light region. The band gap obtain is between 3.3 to 3.5 eV. Themore » details of the results will be discussed in the conference.« less

A Novel Method of Fabricating a Well-Faceted Large-Crystal Diamond Through MPCVD

NASA Astrophysics Data System (ADS)

Man, Weidong; Weng, Jun; Wu, Yuqiong; Chen, Peng; Yu, Xuechao; Wang, Jianhua

2009-12-01

A novel method was developed to deposit a large crystal diamond with good facets up to 1000 μm on a tungsten substrate using a microwave plasma enhanced chemical vapor deposition (MPCVD). This method consists of two steps, namely single-crystal nucleation and growth. Prior to the fabrication of the well-faceted, large crystal diamond, an investigation was made into the nucleation and growth of the diamond which were affected by the O2 concentration and substrate temperature. Deposited diamond crystals were characterized by scanning electron microscopy and micro-Raman spectroscopy. The results showed that the conditions of single-crystal nucleation were appropriate when the ratio of H2/CH4/O2 was about 200/7.0/2.0, while the substrate temperature Ts of 1000°C to 1050°C was the appropriate range for single-crystal diamond growth. Under the optimum parameters, a well-faceted large crystal diamond was obtained.

An Introduction to Atomic Layer Deposition

NASA Technical Reports Server (NTRS)

Dwivedi, Vivek H.

2017-01-01

Atomic Layer Deposition has been instrumental in providing a deposition method for multiple space flight applications. It is well known that ALD is a cost effective nanoadditive-manufacturing technique that allows for the conformal coating of substrates with atomic control in a benign temperature and pressure environment. Through the introduction of paired precursor gases, thin films can be deposited on a myriad of substrates from flat surfaces to those with significant topography. By providing atomic layer control, where single layers of atoms can be deposited, the fabrication of metal transparent films, precise nano-laminates, and coatings of nano-channels, pores and particles is achievable. The feasibility of this technology for NASA line of business applications range from thermal systems, optics, sensors, to environmental protection. An overview of this technology will be presented.

Metal transports and enrichments in iron depositions hosted in basaltic rocks. II: Metal rich fluids and Fe origin

NASA Astrophysics Data System (ADS)

Zhang, Ronghua; Zhang, Xuetong; Hu, Shumin

2015-12-01

This study focuses on revealing the mechanism of metal transport, enrichment and Fe origin of iron deposition during water basalt interactions occurred in basaltic rocks. Observations of the iron deposits (anhydrite-magnetite-pyroxene type deposits) hosted in K-rich basaltic rocks in the Mesozoic volcanic area of the Middle-Lower Yangtze River valley, China, indicate that the mechanism of metal transport and enrichment for those deposits are significant objective to scientists, and the Fe origin problem is not well resolved. Here the metal transport, enrichment and iron origin have been investigated in high temperature experiments of water basaltic interactions. These deposits were accompanying a wide zone with metal alteration. The effects of hydrothermal alteration on major rock-forming element concentrations in basaltic rock were investigated by systematically comparing the chemical compositions of altered rocks with those of fresh rocks. In the deposits, these metals are distributed throughout altered rocks that exhibit vertical zoning from the deeper to the shallow. Then, combined with the investigations of the metal-alterations, we performed kinetic experiments of water-basaltic rock interactions using flow-through reactors in open systems at temperatures from 20 °C to 550 °C, 23-34 MPa. Release rates for the rock-forming elements from the rocks have been measured. Experiments provide the release rates for various elements at a large temperature range, and indicate that the dissolution rates (release rates) for various elements vary with temperature. Si, Al, and K have high release rates at temperatures from 300 °C to 500 °C; the maximum release rates (RMX) for Si are reached at temperatures from 300 °C to 400 °C. The RMXs for Ca, Mg, and Fe are at low temperatures from 20 °C to 300 °C. Results demonstrate that Fe is not released from 400 °C to 550 °C, and indicate that when deep circling fluids passed through basaltic rocks, Fe was not mobile, and fixed in the rocks at temperatures from 400 °C to 550 °C. Significance of the results is to provide evidence that the Fe of ores originated from basalt, and Fe-oxides precipitated across the critical state of water. Simultaneously, Ca, Mg and Fe are fixed in the deeper altered rocks (mafic minerals). But, Fe was dissolved at relatively low temperatures (100-300 °C). Si, Al, and K were easily mobile from basalt by upward flowing fluids from 300 °C to 400 °C and transported to the upper part (silicified and argillized rock).

A study of vapor-phase deposition of silicon nitride layers by ammonolysis of dichlorosilane at lowered pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manzha, N. M., E-mail: magazine@miee.ru

2010-12-15

Deposition kinetics of silicon nitride layers at lowered reactor pressures of 10-130 Pa and temperatures in the range 973-1073 K has been studied. The equilibrium constant of the bimolecular reaction of dichlorosilane with ammonia has been calculated. The apparent activation energies calculated taking into account the experimental growth rate nearly coincide with the experimental data. Recommendations for improving the quality of silicon nitride layers are made.

Semiconductor-insulator transition in VO{sub 2} (B) thin films grown by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rúa, Armando; Díaz, Ramón D.; Lysenko, Sergiy

2015-09-28

Thin films of B-phase VO{sub 2} were grown by pulsed-laser deposition on glass and (100)-cut MgO substrates in a temperature range from 375 to 425 °C and at higher gas pressures than usual for this technique. The films were strongly oriented, with ab-planes parallel to the substrate surface. Detailed study of surface morphology through Atomic Force Microscopy images suggest significant differences in evolution as a function of growth temperature for films on the two types of substrates. Measurements of electrical conductivities through cooling-heating cycles from room temperature to 120 K showed changes of five orders of magnitude, with steeper changes between roommore » temperature and ∼150 K, which corresponds with the extended and reversible phase transition known to occur for this material. At lower temperatures conductivities exhibited Arrhenius behavior, indicating that no further structural change was occurring and that conduction is thermally activated. In this lower temperature range, conductivity of the samples can be described by the near-neighbor hopping model. No hysteresis was found between the cooling and heating braches of the cycles, which is at variance with previous results published for VO{sub 2} (B). This apparent lack of hysteresis for thin films grown in the manner described and the large conductivity variation as a function of temperature observed for the samples suggests this material could be of interest for infrared sensing applications.« less

Constraints of C-O-S isotope compositions and the origin of the Ünlüpınar volcanic-hosted epithermal Pb-Zn ± Au deposit, Gümüşhane, NE Turkey

NASA Astrophysics Data System (ADS)

Akaryali, Enver; Akbulut, Kübra

2016-03-01

The Eastern Pontide Orogenic Belt (EPOB) constitutes one of the best examples of the metallogenic provinces in on the Alpine-Himalayan belt. This study focuses on the genesis of the Ünlüpınar Pb-Zn ± Au deposit in the southern part of the Eastern Pontide Orogenic Belt. The main lithological units in the study area are the Early Carboniferous Kurtoğlu Metamorphic Complex the Late Carboniferous Köse Granitoid and the Early-Middle Jurassic Şenköy Formation. The studied deposit is hosted by the Şenköy Formation, which consists predominantly of basaltic-andesitic rocks and associated pyroclastic rocks that are calc-alkaline in composition. Silicic, sulfidic, argillic, chloritic, hematitic, carbonate and limonite are the most obvious alteration types observed in the deposit site. Ore microscopy studies exhibit that the mineral paragenesis in deposits includes pyrite, chalcopyrite, sphalerite, galena, gold, quartz and calcite. Electron microprobe analyses conducted on sphalerite indicate that the Zn/Cd ratio varies between 84 and 204, and these ratios point at a hydrothermal deposit related to granitic magmas. Fluid inclusion studies in calcite and quartz show that the homogenization temperature of the studied deposit ranges between 90-160 °C and 120-330 °C respectively. The values of sulfur isotope analysis of pyrite, sphalerite and galena minerals vary between 1.6‰ and 5.7‰, and the results of oxygen and carbon isotope analysis range between 8.4‰ and 18‰ and -5‰ and -3.6‰, respectively. The average formation temperature of the ore was calculated as 264 °C with a sulfur isotope geothermometer. All of the data indicate that the Ünlüpınar deposit is an epithermal vein-type mineralization that was formed depending on the granitic magmatism.

Electroless Deposition of Palladium on Macroscopic 3D-Printed Polymers with Dense Microlattice Architectures for Development of Multifunctional Composite Materials

DOE PAGES

Jones, Christopher G.; Mills, Bernice E.; Nishimoto, Ryan K.; ...

2017-10-25

A simple procedure has been developed to create palladium (Pd) films on the surface of several common polymers used in commercial fused deposition modeling (FDM) and stereolithography (SLA) based three-dimensional (3D) printing by an electroless deposition process. The procedure can be performed at room temperature, with equipment less expensive than many 3D printers, and occurs rapidly enough to achieve full coverage of the film within a few minutes. 3D substrates composed of dense logpile or cubic lattices with part sizes in the mm to cm range, and feature sizes as small as 150 μm were designed and printed using commerciallymore » available 3D printers. The deposition procedure was successfully adapted to show full coverage in the lattice substrates. As a result, the ability to design, print, and metallize highly ordered three-dimensional microscale structures could accelerate development of a range of optimized chemical and mechanical engineering systems.« less

Electroless Deposition of Palladium on Macroscopic 3D-Printed Polymers with Dense Microlattice Architectures for Development of Multifunctional Composite Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jones, Christopher G.; Mills, Bernice E.; Nishimoto, Ryan K.

A simple procedure has been developed to create palladium (Pd) films on the surface of several common polymers used in commercial fused deposition modeling (FDM) and stereolithography (SLA) based three-dimensional (3D) printing by an electroless deposition process. The procedure can be performed at room temperature, with equipment less expensive than many 3D printers, and occurs rapidly enough to achieve full coverage of the film within a few minutes. 3D substrates composed of dense logpile or cubic lattices with part sizes in the mm to cm range, and feature sizes as small as 150 μm were designed and printed using commerciallymore » available 3D printers. The deposition procedure was successfully adapted to show full coverage in the lattice substrates. As a result, the ability to design, print, and metallize highly ordered three-dimensional microscale structures could accelerate development of a range of optimized chemical and mechanical engineering systems.« less

Study on the growth mechanism and optical properties of sputtered lead selenide thin films

NASA Astrophysics Data System (ADS)

Sun, Xigui; Gao, Kewei; Pang, Xiaolu; Yang, Huisheng; Volinsky, Alex A.

2015-11-01

Lead selenide thin films with different microstructure were deposited on Si (1 0 0) substrates using magnetron sputtering at 50 °C, 150 °C and 250 °C, respectively. The crystal structure of the sputtered PbSe thin films varies from amorphous crystalline to columnar grain, and then to double-layer (nano-crystalline layer and columnar grain layer) structure as the deposition temperature increases, which is due to the dominating growth mode of the thin films changes from Frank-van der Merwe (or layer-by-layer) growth mode at 50 °C to Volmer-Weber (or 3D island) growth mode at 150 °C, and then to Stranski-Krastanow (or 3D island-on-wetting-layer) growth mode at 250 °C. The growth mechanism of the sputtered PbSe thin films is mainly dominated by the surface and strain energy contributions. Moreover, the strain energy contribution is more prominent when the deposition temperature is less than 180 °C, while, the surface energy contribution is more prominent when the deposition temperature is higher than 180 °C. The absorption spectra of the sputtered PbSe thin films are in 3.1-5 μm range. Besides, the sputtered PbSe thin film prepared at 250 °C has two different optical band gaps due to its unique double-layer structure. According to the theoretical calculation results, the variation of the band gap with the deposition temperature is determined by the shift of the valence band maximum with the lattice constant.

Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

DOEpatents

Miller, Joel S.; Pokhodnya, Kostyantyn I.

2003-12-09

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

NASA Astrophysics Data System (ADS)

Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

2017-09-01

Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

Numerical simulation of calcium sulfate (CaSO4) fouling in the plate heat exchanger

NASA Astrophysics Data System (ADS)

Xu, Zhiming; Zhao, Yu; Han, Zhimin; Wang, Jingtao

2018-07-01

Plate heat exchanger is a widely used apparatus in the industrial production processes. Through a numerical simulation method, this paper calculates the deposition rate of CaSO4 fouling on heat transfer surfaces of the plate heat exchanger under saturation in the bulk. The effects of CaSO4 concentration in the range 0.7 kg/m3 to 1.5 kg/m3, inlet flow velocity under turbulent flow, and the fluid's inlet temperature from 288 K to 328 K on the deposition rate, removal mass rate and fouling resistance are investigated. The simulation results are compared with the experimental results showing similar trend. The simulation results show that the concentration and the flow velocity affect significantly the fouling characteristics in the plate heat exchanger. The deposition mass rate, removal mass rate, and asymptotic value of fouling resistance all increase with the increase in CaSO4 concentration and the inlet temperature of the hot fluid, while the asymptotic value of fouling resistance decreases with the increasing of inlet flow velocity. The influence of the inlet temperature of cold fluid may be negligible.

The Mechanical Properties of Energetically Deposited Non-Crystalline Carbon Thin Films

DOE PAGES

Kracica, M.; Kocer, C.; Lau, D.; ...

2015-11-05

The mechanical behaviour of carbon films prepared with a variety of densities and microstructures was investigated using nanoindentation. Deposition energies between 25 and 600 eV and temperatures in the range 25-600 °C were used. Films prepared at low temperatures and moderate energy were amorphous with a high density. Finite element methods were used to model the stress fields, reproduce the indentation behaviour and evaluate elastic properties. Young s moduli up to 670 GPa and a low Poisson s ratio of ~ 0.17 were found, comparable to polycrystalline cubic boron nitride, one of the hardest materials known. Films with the samemore » density did not always show the same behaviour, emphasising the role of microstructure in determining mechanical response. Extended graphite- like regions within the films grown at high energy and high temperature observed in transmission electron microscopy caused plastic deformation and failure to recover after a complete indentation cycle. At low deposition energies, the graphite-like regions were smaller in size causing plastic deformation but with complete recovery after indentation.« less

Deposition and characterization of aluminum magnesium boride thin film coatings

NASA Astrophysics Data System (ADS)

Tian, Yun

Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (< 3 x 10-6 Torr), accompanied by strong texture formation. Low vacuum level-as deposited AlMgB14 films have low hardness (10 GPa), but high vacuum level-as deposited AlMgB14 films exhibit an extremely high hardness (45 GPa - 51 GPa), and the higher deposition temperature results in still higher hardness. Furthermore, a very low friction coefficient (0.04 - 0.05) has been observed for high vacuum level-as deposited AlMgB14 films, which could be ascribed to the in situ formation of a surface self-lubricating layer. Unlike most boron-rich boride films, high vacuum level-as deposited AlMgB14 films also possess a low n-type electrical resistivity, which is a consequence of high carrier concentration and moderate carrier mobility. The operative electrical transport mechanism and doping behavior for high vacuum level-as deposited AlMgB14 films are discussed in detail in this thesis.

Hydrothermal barite mineralization at Chenarvardeh deposit, Markazi Province, Iran: Evidences from REE geochemistry and fluid inclusions

NASA Astrophysics Data System (ADS)

Ehya, Farhad; Mazraei, Shaghayegh Moalaye

2017-10-01

Barite mineralization occurs at Chenarvardeh deposit as layers and lenses in Upper Eocene volcanic and pyroclastic rocks. The host rocks are intensely saussuritized in most places. Barite is accompanied by calcite, Mn-oxides, galena and malachite as subordinate minerals. The amount of Sr in barites is low and varies between 0.11 and 0.30 wt%. The concentration of Rb, Zr, Y, Ta and Hf is also low (<5 ppm) in barite samples. The amount of total REEs (∑REE) is low in barites, ranging from 7.51 to 30.50 ppm. Chondrite-normalized REE patterns reveal LREE enrichment with respect to HREE, and positive Ce anomalies. Fluid inclusions are common in barite samples, being dominantly from liquid-rich two phase (L + V) type. Salinity values in fluid inclusions range from 9.41 to 18.69 wt% NaCl equivalent with most frequent salinities falling in the range of 10-15 wt% NaCl equivalent. Homogenization temperatures (Th) range between 160 and 220 °C, being the 180-200 °C range as the most common Th interval. A combination of factors, including geologic setting, host rock, mineral assemblages, REE geochemistry and fluid inclusion data are consistent with a submarine volcanic hydrothermal model for barite formation at the Chenarvardeh deposit. Mineral-forming fluids originated from solutions related to submarine hydrothermal activities deposited barite on seafloor as they encountered sulfate-bearing seawater.

Comparative anatomy of epithermal precious- and base-metal districts hosted by volcanic rocks: A talk presented at the GAC/MSC/GGU Joint Annual Meeting, May 11-13, 1983, Victoria, British Columbia

USGS Publications Warehouse

Heald-Wetlaufer, Pamela; Hayba, Daniel O.; Foley, Nora K.; Goss, J.A.

1983-01-01

In order to distinguish dissimilar from similar features of epithermal districts, lithotectonic, mineralogical and geochemical traits are compiled for 15 such districts. The districts occur in structurally complex settings associated with silicic to intermediate volcanics. Affiliation with subduction environments on a continental scale and caldera settings on a regional scale is common but is not demonstrable for all districts. Most deposits formed near the end of major volcanism, but some formed considerably later. Paleodepth to the top of the ore is 300-600m for most districts, although Au-rich districts appear to be shallower. The lateral extent of the ore zone is highly variable and far exceeds the limited vertical range (300-800m). Most ore was deposited from dominantly meteoric fluids ranging in temperature from 220°-290°C. Salinities ranged from 0-13 wt% NaCl equiv., and typical values were 1-3 wt%. Although noted for eight deposits, boiling is clearly associated with precious-metal deposition in only two deposits. Four districts, typified by Goldfield, Nev., are characterized by a highly sulfidized mineral assemblage, advanced argillic alteration, and ore deposition closely following emplacement of the host rock. The remaining eleven districts highlight a second, discrete type of deposit. They contain adularia, exhibit sericitic ± argillic alteration, and were mineralized significantly after emplacement of the host rock. The latter category includes two subgroups: Ag- and base-metal-rich deposits (e.g., Creede, Colo.), and Au-rich, base-metal-poor deposits (e.g., Round Mtn., Nev.).

An analysis of the dust deposition on solar photovoltaic modules.

PubMed

Styszko, Katarzyna; Jaszczur, Marek; Teneta, Janusz; Hassan, Qusay; Burzyńska, Paulina; Marcinek, Ewelina; Łopian, Natalia; Samek, Lucyna

2018-03-29

Solid particles impair the performance of the photovoltaic (PV) modules. This results in power losses which lower the efficiency of the system as well as the increases of temperature which additionally decreases the performance and lifetime. The deposited dust chemical composition, concentration and formation of a dust layer on the PV surface differ significantly in reference to time and location. In this study, an evaluation of dust deposition on the PV front cover glass during the non-heating season in one of the most polluted European cities, Kraków, was performed. The time-dependent particle deposition and its correlation to the air pollution with particulate matter were analysed. Dust deposited on several identical PV modules during variable exposure periods (from 1 day up to 1 week) and the samples of total suspended particles (TSP) on quartz fibre filters using a low volume sampler were collected during the non-heating season in the period of 5 weeks. The concentration of TSP in the study period ranged between 12.5 and 60.05 μg m -3 while the concentration of PM10 observed in the Voivodeship Inspectorate of Environmental Protection traffic station, located 1.2 km from the TSP sampler, ranged from 14 to 47 μg m -3 . It was revealed that dust deposition density on a PV surface ranged from 7.5 to 42.1 mg m -2 for exposure periods of 1 day while the measured weekly dust deposition densities ranged from 25.8 to 277.0 mg m -2 . The precipitation volume and its intensity as well as humidity significantly influence the deposited dust. The rate of dust accumulation reaches approximately 40 mg m -2 day -1 in the no-precipitation period and it was at least two times higher than fluxes calculated on the basis of PM10 and TSP concentrations which suggest that additional forces such as electrostatic forces significantly influence dust deposition.

Material Problems in Using High-Temperature Thermocouples

NASA Astrophysics Data System (ADS)

Edler, F.

2011-08-01

The material compatibility and thermal stability of ceramic-composite coatings of different oxide ceramics deposited on alumina tubes to prevent the reduction of the alumina were investigated in the high-temperature range between 1750 °C and 1850 °C. It turned out that the coatings were thermally unstable and did not provide adequate protection against the reduction of the alumina tubes. The oxide ceramics formed eutectic compositions with low melting temperatures and were also prone to reduction to elementary metals by carbon. A new type of high-temperature thermocouple on the basis of refractory and noble metals was tested in the temperature range between 1325 °C and 1800 °C. Two metal-sheathed prototypes were constructed. The thermoelectric behavior of the tungsten5%rhenium/iridium thermocouples (W5%Re/Ir) was investigated by different high-temperature exposures, and the thermoelectric stability was checked by repeated measurements at the ice point.

Atomic layer deposition of VO2 films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor

NASA Astrophysics Data System (ADS)

Lv, Xinrui; Cao, Yunzhen; Yan, Lu; Li, Ying; Song, Lixin

2017-02-01

VO2 thin films have been grown on Si(100) (VO2/Si) and fused silica substrates (VO2/SiO2) by atomic layer deposition (ALD) using tetrakis-dimethyl-amino vanadium (IV) (TDMAV) as a novel vanadium precursor and water as reactant gas. The quartz crystal microbalance (QCM) measurement was performed to study the ALD process of VO2 thin film deposition, and a constant growth rate of about 0.95 Å/cycle was obtained at the temperature range of 150-200 °C. XRD measurement was performed to study the influence of deposition temperature and post-annealing condition on the crystallization of VO2 films, which indicated that the films deposited between 150 and 200 °C showed well crystallinity after annealing at 475 °C for 100 min in Ar atmosphere. XPS measurement verified that the vanadium oxidation state was 4+ for both as-deposited film and post-annealed VO2/Si film. AFM was applied to study the surface morphology of VO2/Si films, which showed a dense polycrystalline film with roughness of about 1 nm. The resistance of VO2/Si films deposited between 150 °C and 200 °C as a function of temperature showed similar semiconductor-to-metal transition (SMT) characters with the transition temperature for heating branch (Tc,h) of about 72 °C, a hysteresis width of about 10 °C and the resistance change of two orders of magnitude. The increase of Tc,h compared with the bulk VO2 (68 °C) may be attributed to the tensile stress along the c-axis in the film. Transmittance measurement of VO2/SiO2 films showed typical thermochromic property with a NIR switching efficiency of above 50% at 2 μm across the transition.

Tilted BaHfO3 nanorod artificial pinning centres in REBCO films on inclined substrate deposited-MgO coated conductor templates

NASA Astrophysics Data System (ADS)

Stafford, B. H.; Sieger, M.; Ottolinger, R.; Meledin, A.; Strickland, N. M.; Wimbush, S. C.; Van Tendeloo, G.; Hühne, R.; Schultz, L.

2017-05-01

We grow BaHfO3 (BHO) nanorods in REBa2Cu3O7-x (REBCO, RE: Gd or Y) thin films on metal tapes coated with the inclined substrate deposited (ISD)-MgO template by both electron beam physical vapour deposition and pulsed laser deposition. In both cases the nanorods are inclined by an angle of 21°-29° with respect to the sample surface normal as a consequence of the tilted growth of the REBCO film resulting from the ISD-MgO layer. We present angular critical current density (J c) anisotropy as well as field- and temperature-dependant J c data of the BHO nanorod-containing GdBCO films demonstrating an increase in J c over a wide range of temperatures between 30 and 77 K and magnetic fields up to 8 T. In addition, we show that the angle of the peak in the J c anisotropy curve resulting from the nanorods is dependent both on temperature and magnetic field. The largest J c enhancement from the addition of the nanorods was found to occur at 30 K, 3 T, resulting in a J c of 3.0 MA cm-2.

Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

González, G. B.; Okasinski, J. S.; Buchholz, D. B.

Grazing-incidence, wide-angle x-ray scattering measurements were conducted on indium oxide thin films grown on silica substrates via pulsed laser deposition. Growth temperatures (T G) in this study ranged from -50 °C to 600 °C, in order to investigate the thermal effects on the film structure and its spatial homogeneity, as well as their relationship to electrical properties. Films grown below room temperature were amorphous, while films prepared at T G = 25 °C and above crystallized in the cubic bixbyite structure, and their crystalline fraction increased with deposition temperature. The electrical conductivity (σ) and electrical mobility (μ) were strongly enhancedmore » at low deposition temperatures. For T G = 25 °C and 50 °C, a strong < 100 > preferred orientation (texture) occurred, but it decreased as the deposition temperature, and consequential crystallinity, increased. Higher variations in texture coefficients and in lattice parameters were measured at the film surface compared to the interior of the film, indicating strong microstructural gradients. At low crystallinity, the in-plane lattice spacing expanded, while the out-of-plane spacing contracted, and those values merged at T G = 400 °C, where high μ was measured. This directional difference in lattice spacing, or deviatoric strain, was linear as a function of both deposition temperature and the degree of crystallinity. The crystalline sample with T G = 100 °C had the lowest mobility, as well as film diffraction peaks which split into doublets. The deviatoric strains from these doublet peaks differ by a factor of four, supporting the presence of both a microstructure and strain gradient in this film. More isotropic films exhibit larger l values, indicating that the microstructure directly correlates with electrical properties. Lastly, these results provide valuable insights that can help to improve the desirable properties of indium oxide, as well as other transparent conducting oxides.« less

Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering

NASA Astrophysics Data System (ADS)

González, G. B.; Okasinski, J. S.; Buchholz, D. B.; Boesso, J.; Almer, J. D.; Zeng, L.; Bedzyk, M. J.; Chang, R. P. H.

2017-05-01

Grazing-incidence, wide-angle x-ray scattering measurements were conducted on indium oxide thin films grown on silica substrates via pulsed laser deposition. Growth temperatures (TG) in this study ranged from -50 °C to 600 °C, in order to investigate the thermal effects on the film structure and its spatial homogeneity, as well as their relationship to electrical properties. Films grown below room temperature were amorphous, while films prepared at TG = 25 °C and above crystallized in the cubic bixbyite structure, and their crystalline fraction increased with deposition temperature. The electrical conductivity (σ) and electrical mobility (μ) were strongly enhanced at low deposition temperatures. For TG = 25 °C and 50 °C, a strong ⟨100⟩ preferred orientation (texture) occurred, but it decreased as the deposition temperature, and consequential crystallinity, increased. Higher variations in texture coefficients and in lattice parameters were measured at the film surface compared to the interior of the film, indicating strong microstructural gradients. At low crystallinity, the in-plane lattice spacing expanded, while the out-of-plane spacing contracted, and those values merged at TG = 400 °C, where high μ was measured. This directional difference in lattice spacing, or deviatoric strain, was linear as a function of both deposition temperature and the degree of crystallinity. The crystalline sample with TG = 100 °C had the lowest mobility, as well as film diffraction peaks which split into doublets. The deviatoric strains from these doublet peaks differ by a factor of four, supporting the presence of both a microstructure and strain gradient in this film. More isotropic films exhibit larger μ values, indicating that the microstructure directly correlates with electrical properties. These results provide valuable insights that can help to improve the desirable properties of indium oxide, as well as other transparent conducting oxides.

Jet Fuel Thermal Stability Investigations Using Ellipsometry

NASA Technical Reports Server (NTRS)

Nash, Leigh; Vasu, Subith S.; Klettlinger, Jennifer Lindsey

2017-01-01

Jet fuels are typically used for endothermic cooling in practical engines where their thermal stability is very important. In this work the thermal stability of Sasol IPK (a synthetic jet fuel) with varying levels of naphthalene has been studied on stainless steel substrates using spectroscopic ellipsometry in the temperature range 385-400 K. Ellipsometry is an optical technique that measures the changes in a light beam’s polarization and intensity after it reflects off of a thin film to determine the film’s thickness and optical properties. All of the tubes used were rated as thermally unstable by the color standard portion of the Jet Fuel Thermal Oxidation Test, and this was confirmed by the deposit thicknesses observed using ellipsometry. A new amorphous model on a stainless steel substrate was used to model the data and obtain the results. It was observed that, as would be expected, increasing the temperature of the tube increased the overall deposit amount for a constant concentration of naphthalene. The repeatability of these measurements was assessed using multiple trials of the same fuel at 385 K. Lastly, the effect of increasing the naphthalene concentration in the fuel at a constant temperature was found to increase the deposit thickness.In conclusion, ellipsometry was used to investigate the thermal stability of jet fuels on stainless steel substrate. The effects of increasing temperature and addition of naphthalene on stainless steel tubes with Sasol IPK fuel were investigated. It was found, as expected, that increasing temperature lead to an increase in deposit thickness. It wasAmerican Institute of Aeronautics and Astronautics6also found that increasing amounts of naphthalene increased the maximum deposit thickness. The repeatability of these measurements was investigated using multiple tests at the same conditions. The present work provides as a better quantitative tool compared to the widely used JFTOT technique. Future work will expand on the fuel types, temperature, and substrate materials.

Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering

DOE PAGES

González, G. B.; Okasinski, J. S.; Buchholz, D. B.; ...

2017-05-25

Grazing-incidence, wide-angle x-ray scattering measurements were conducted on indium oxide thin films grown on silica substrates via pulsed laser deposition. Growth temperatures (T G) in this study ranged from -50 °C to 600 °C, in order to investigate the thermal effects on the film structure and its spatial homogeneity, as well as their relationship to electrical properties. Films grown below room temperature were amorphous, while films prepared at T G = 25 °C and above crystallized in the cubic bixbyite structure, and their crystalline fraction increased with deposition temperature. The electrical conductivity (σ) and electrical mobility (μ) were strongly enhancedmore » at low deposition temperatures. For T G = 25 °C and 50 °C, a strong < 100 > preferred orientation (texture) occurred, but it decreased as the deposition temperature, and consequential crystallinity, increased. Higher variations in texture coefficients and in lattice parameters were measured at the film surface compared to the interior of the film, indicating strong microstructural gradients. At low crystallinity, the in-plane lattice spacing expanded, while the out-of-plane spacing contracted, and those values merged at T G = 400 °C, where high μ was measured. This directional difference in lattice spacing, or deviatoric strain, was linear as a function of both deposition temperature and the degree of crystallinity. The crystalline sample with T G = 100 °C had the lowest mobility, as well as film diffraction peaks which split into doublets. The deviatoric strains from these doublet peaks differ by a factor of four, supporting the presence of both a microstructure and strain gradient in this film. More isotropic films exhibit larger l values, indicating that the microstructure directly correlates with electrical properties. Lastly, these results provide valuable insights that can help to improve the desirable properties of indium oxide, as well as other transparent conducting oxides.« less

Ozone deposition velocities, reaction probabilities and product yields for green building materials

NASA Astrophysics Data System (ADS)

Lamble, S. P.; Corsi, R. L.; Morrison, G. C.

2011-12-01

Indoor surfaces can passively remove ozone that enters buildings, reducing occupant exposure without an energy penalty. However, reactions between ozone and building surfaces can generate and release aerosols and irritating and carcinogenic gases. To identify desirable indoor surfaces the deposition velocity, reaction probability and carbonyl product yields of building materials considered green (listed, recycled, sustainable, etc.) were quantified. Nineteen separate floor, wall or ceiling materials were tested in a 10 L, flow-through laboratory reaction chamber. Inlet ozone concentrations were maintained between 150 and 200 ppb (generally much lower in chamber air), relative humidity at 50%, temperature at 25 °C and exposure occurred over 24 h. Deposition velocities ranged from 0.25 m h -1 for a linoleum style flooring up to 8.2 m h -1 for a clay based paint; reaction probabilities ranged from 8.8 × 10 -7 to 6.9 × 10 -5 respectively. For all materials, product yields of C 1 thru C 12 saturated n-aldehydes, plus acetone ranged from undetectable to greater than 0.70 The most promising material was a clay wall plaster which exhibited a high deposition velocity (5.0 m h -1) and a low product yield (

Optical, Electrical, and Crystal Properties of TiO2 Thin Films Grown by Atomic Layer Deposition on Silicon and Glass Substrates

NASA Astrophysics Data System (ADS)

Kupa, I.; Unal, Y.; Cetin, S. S.; Durna, L.; Topalli, K.; Okyay, A. K.; Ates, H.

2018-05-01

TiO2 thin films have been deposited on glass and Si(100) by atomic layer deposition (ALD) technique using tetrakis(diethylamido)titanium(IV) and water vapor as reactants. Thorough investigation of the properties of the TiO2/glass and TiO2/Si thin films was carried out, varying the deposition temperature in the range from 100°C to 250°C while keeping the number of reaction cycles fixed at 1000. Physical and material property analyses were performed to investigate optical and electrical properties, composition, structure, and morphology. TiO2 films grown by ALD may represent promising materials for future applications in optoelectronic devices.

Argon thermochronology of mineral deposits; a review of analytical methods, formulations, and selected applications

USGS Publications Warehouse

Snee, Lawrence W.

2002-01-01

40Ar/39Ar geochronology is an experimentally robust and versatile method for constraining time and temperature in geologic processes. The argon method is the most broadly applied in mineral-deposit studies. Standard analytical methods and formulations exist, making the fundamentals of the method well defined. A variety of graphical representations exist for evaluating argon data. A broad range of minerals found in mineral deposits, alteration zones, and host rocks commonly is analyzed to provide age, temporal duration, and thermal conditions for mineralization events and processes. All are discussed in this report. The usefulness of and evolution of the applicability of the method are demonstrated in studies of the Panasqueira, Portugal, tin-tungsten deposit; the Cornubian batholith and associated mineral deposits, southwest England; the Red Mountain intrusive system and associated Urad-Henderson molybdenum deposits; and the Eastern Goldfields Province, Western Australia.

An investigation on high temperature fatigue properties of tempered nuclear-grade deposited weld metals

NASA Astrophysics Data System (ADS)

Cao, X. Y.; Zhu, P.; Yong, Q.; Liu, T. G.; Lu, Y. H.; Zhao, J. C.; Jiang, Y.; Shoji, T.

2018-02-01

Effect of tempering on low cycle fatigue (LCF) behaviors of nuclear-grade deposited weld metal was investigated, and The LCF tests were performed at 350 °C with strain amplitudes ranging from 0.2% to 0.6%. The results showed that at a low strain amplitude, deposited weld metal tempered for 1 h had a high fatigue resistance due to high yield strength, while at a high strain amplitude, the one tempered for 24 h had a superior fatigue resistance due to high ductility. Deposited weld metal tempered for 1 h exhibited cyclic hardening at the tested strain amplitudes. Deposited weld metal tempered for 24 h exhibited cyclic hardening at a low strain amplitude but cyclic softening at a high strain amplitude. Existence and decomposition of martensite-austenite (M-A) islands as well as dislocations activities contributed to fatigue property discrepancy among the two tempered deposited weld metal.

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

NASA Astrophysics Data System (ADS)

Alharthi, Bader; Grant, Joshua M.; Dou, Wei; Grant, Perry C.; Mosleh, Aboozar; Du, Wei; Mortazavi, Mansour; Li, Baohua; Naseem, Hameed; Yu, Shui-Qing

2018-05-01

Germanium (Ge) films have been grown on silicon (Si) substrate by ultrahigh-vacuum chemical vapor deposition with plasma enhancement (PE). Argon plasma was generated using high-power radiofrequency (50 W) to assist in germane decomposition at low temperature. The growth temperature was varied in the low range of 250°C to 450°C to make this growth process compatible with complementary metal-oxide-semiconductor technology. The material and optical properties of the grown Ge films were investigated. The material quality was determined by Raman and x-ray diffraction techniques, revealing growth of crystalline films in the temperature range of 350°C to 450°C. Photoluminescence spectra revealed improved optical quality at growth temperatures of 400°C and 450°C. Furthermore, material quality study using transmission electron microscopy revealed existence of defects in the Ge layer grown at 400°C. Based on the etch pit density, the average threading dislocation density in the Ge layer obtained at this growth temperature was measured to be 4.5 × 108 cm-2. This result was achieved without any material improvement steps such as use of graded buffer or thermal annealing. Comparison between PE and non-plasma-enhanced growth, in the same machine at otherwise the same growth conditions, indicated increased growth rate and improved material and optical qualities for PE growth.

Experimental study on the coalescence process of SiO2 supported colloidal Au nanoparticles

NASA Astrophysics Data System (ADS)

Ruffino, F.; Torrisi, V.; Grimaldi, M. G.

2015-11-01

We report on an experimental study of the coalescence-driven grow process of colloidal Au nanoparticles on SiO2 surface. Nanoparticles with 30, 50, 80, 100 nm nominal diameters on a SiO2 substrate were deposited, from solutions, by the drop-casting method. Then, annealing processes, in the 573-1173 K temperature range and 900-3600 s time range, were performed. Using scanning electron microscopy analyses, the temporal evolution of the nanoparticles sizes has been studied. In particular, for all classes of nanoparticles, the experimental-obtained diameters distributions evidenced double-peak shapes (i. e. bimodal distributions): a first peak centered (and unchanged changing the annealing temperature and/or time) at the nominal diameter of the as-deposited nanoparticles, , and a second peak shifting at higher mean diameters, , increasing the annealing temperature and/or time. This observation suggested us a coalescence-driven growth process of a nanoparticles sub-population. As a consequence, the temporal evolution of (for each class of nanoparticles and each annealing temperature), within the well-established particles coalescence theoretical framework, has been analyzed. In particular, by the analyses of the experimental data using relations as prescribed by the theoretical model, a characteristic size-dependent activation energy for the Au nanoparticles coalescence process has been evaluated.

Measurement of Young's modulus and residual stress of thin SiC layers for MEMS high temperature applications

NASA Astrophysics Data System (ADS)

Pabst, Oliver; Schiffer, Michael; Obermeier, Ernst; Tekin, Tolga; Lang, Klaus Dieter; Ngo, Ha-Duong

2011-06-01

Silicon carbide (SiC) is a promising material for applications in harsh environments. Standard silicon (Si) microelectromechanical systems (MEMS) are limited in operating temperature to temperatures below 130 °C for electronic devices and below 600 °C for mechanical devices. Due to its large bandgap SiC enables MEMS with significantly higher operating temperatures. Furthermore, SiC exhibits high chemical stability and thermal conductivity. Young's modulus and residual stress are important mechanical properties for the design of sophisticated SiC-based MEMS devices. In particular, residual stresses are strongly dependent on the deposition conditions. Literature values for Young's modulus range from 100 to 400 GPa, and residual stresses range from 98 to 486 MPa. In this paper we present our work on investigating Young's modulus and residual stress of SiC films deposited on single crystal bulk silicon using bulge testing. This method is based on measurement of pressure-dependent membrane deflection. Polycrystalline as well as single crystal cubic silicon carbide samples are studied. For the samples tested, average Young's modulus and residual stress measured are 417 GPa and 89 MPa for polycrystalline samples. For single crystal samples, the according values are 388 GPa and 217 MPa. These results compare well with literature values.

Superheater Corrosion In Biomass Boilers: Today's Science and Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharp, William

2011-12-01

This report broadens a previous review of published literature on corrosion of recovery boiler superheater tube materials to consider the performance of candidate materials at temperatures near the deposit melting temperature in advanced boilers firing coal, wood-based fuels, and waste materials as well as in gas turbine environments. Discussions of corrosion mechanisms focus on the reactions in fly ash deposits and combustion gases that can give corrosive materials access to the surface of a superheater tube. Setting the steam temperature of a biomass boiler is a compromise between wasting fuel energy, risking pluggage that will shut the unit down, andmore » creating conditions that will cause rapid corrosion on the superheater tubes and replacement expenses. The most important corrosive species in biomass superheater corrosion are chlorine compounds and the most corrosion resistant alloys are typically FeCrNi alloys containing 20-28% Cr. Although most of these materials contain many other additional additions, there is no coherent theory of the alloying required to resist the combination of high temperature salt deposits and flue gases that are found in biomass boiler superheaters that may cause degradation of superheater tubes. After depletion of chromium by chromate formation or chromic acid volatilization exceeds a critical amount, the protective scale gives way to a thick layer of Fe{sub 2}O{sub 3} over an unprotective (FeCrNi){sub 3}O{sub 4} spinel. This oxide is not protective and can be penetrated by chlorine species that cause further acceleration of the corrosion rate by a mechanism called active oxidation. Active oxidation, cited as the cause of most biomass superheater corrosion under chloride ash deposits, does not occur in the absence of these alkali salts when the chloride is present as HCl gas. Although a deposit is more corrosive at temperatures where it is molten than at temperatures where it is frozen, increasing superheater tube temperatures through the measured first melting point of fly ash deposits does not necessarily produce a step increase in corrosion rate. Corrosion rate typically accelerates at temperatures below the first melting temperature and mixed deposits may have a broad melting temperature range. Although the environment at a superheater tube surface is initially that of the ash deposits, this chemistry typically changes as the deposits mature. The corrosion rate is controlled by the environment and temperature at the tube surface, which can only be measured indirectly. Some results are counter-intuitive. Two boiler manufacturers and a consortium have developed models to predict fouling and corrosion in biomass boilers in order to specify tube materials for particular operating conditions. It would be very useful to compare the predictions of these models regarding corrosion rates and recommended alloys in the boiler environments where field tests will be performed in the current program. Manufacturers of biomass boilers have concluded that it is more cost-effective to restrict steam temperatures, to co-fire biofuels with high sulfur fuels and/or to use fuel additives rather than try to increase fuel efficiency by operating with superheater tube temperatures above melting temperature of fly ash deposits. Similar strategies have been developed for coal fired and waste-fired boilers. Additives are primarily used to replace alkali metal chloride deposits with higher melting temperature and less corrosive alkali metal sulfate or alkali aluminum silicate deposits. Design modifications that have been shown to control superheater corrosion include adding a radiant pass (empty chamber) between the furnace and the superheater, installing cool tubes immediately upstream of the superheater to trap high chloride deposits, designing superheater banks for quick replacement, using an external superheater that burns a less corrosive biomass fuel, moving circulating fluidized bed (CFB) superheaters from the convective pass into the hot recirculated fluidizing medium and adding an insulating layer to superheater tubes to raise their surface temperature above the dew point temperature of alkali chlorides. These design changes offer advantages but introduce other challenges. For example, operating with superheater temperatures above the dew point of alkali chlorides could require the use of creep-resistant tube alloys and doesn't eliminate chloride corrosion. Improved test methods that can be applied within this project include automated dimensional metrology to make a statistical analysis of depth of penetration and corrosion product thickness, and simultaneous thermal analysis measurements to quantify the melting of complex ashes and avoid the unreliability of the standard ash fusion test. Other important developments in testing include the installation of individually-temperature-controlled superheater loops for corrosion testing in operating boilers and temperature gradient testing.« less

Ion/proton-conducting apparatus and method

DOEpatents

Yates, Matthew; Xue, Wei

2014-12-23

A c-axis-oriented HAP thin film synthesized by seeded growth on a palladium hydrogen membrane substrate. An exemplary synthetic process includes electrochemical seeding on the substrate, and secondary and tertiary hydrothermal treatments under conditions that favor growth along c-axes and a-axes in sequence. By adjusting corresponding synthetic conditions, an HAP this film can be grown to a controllable thickness with a dense coverage on the underlying substrate. The thin films have relatively high proton conductivity under hydrogen atmosphere and high temperature conditions. The c-axis oriented films may be integrated into fuel cells for application in the intermediate temperature range of 200-600.degree. C. The electrochemical-hydrothermal deposition technique may be applied to create other oriented crystal materials having optimized properties, useful for separations and catalysis as well as electronic and electrochemical applications, electrochemical membrane reactors, and in chemical sensors. Additional high-density and gas-tight HAP film compositions may be deposited using a two-step deposition method that includes an electrochemical deposition method followed by a hydrothermal deposition method. The two-step method uses a single hydrothermal deposition solution composition. The method may be used to deposit HAP films including but not limited to at least doped HAP films, and more particularly including carbonated HAP films. In addition, the high-density and gas-tight HAP films may be used in proton exchange membrane fuel cells.

Thermo-optical properties of 1H[3,4-b] quinoline films used in electroluminescent devices

NASA Astrophysics Data System (ADS)

Jaglarz, Janusz; Kępińska, Mirosława; Sanetra, Jerzy

2014-06-01

Electroluminescence cells with H[3,4-b] quinoline layers are promising devices for a blue light emitting EL diode. This work measured the optical reflectance as a function of temperature in copolymers PAQ layers deposited on Si crystalline substrate. Using the extended Cauchy dispersion model of the film refractive index we determined the thermo-optical coefficients for quinoline layers in the temperature range of 76-333 K from combined ellipsometric and spectrofotometric studies. The obtained values of thermo-optical coefficients of thin PAQ film, were negative and ranged in 5-10 × 10-4 [1/K].

Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques

DOE PAGES

Perrotta, Alberto; Fuentes-Hernandez, Canek; Khan, Talha M.; ...

2016-12-02

Plasma-assisted atomic layer deposition (ALD) is used for the deposition of environmental barriers directly onto organic photovoltaic devices (OPVs) at near room temperature (30 °C). To study the effect of the ALD process on the organic materials forming the device, the precursor diffusion and intermixing at the interface during the growth of different plasma- assisted ALD inorganic barriers (i.e. Al2O3 and TiO2) onto the organic photoactive layer (P3HT:ICBA) was investigated. Depth profile x-ray photoelectron spectroscopy was used to analyze the composition of the organic/inorganic interface to investigate the infiltration of the plasma-assisted ALD precursors into the photoactive layer as amore » function of the precursor dimension, the process temperature, and organic layer morphology. The free volume in the photoactive layer accessible to the ALD precursor was characterized by means of ellipsometric porosimetry (EP) and spectroscopic ellipsometry as a function of temperature. The organic layer is shown to exhibit free volume broadening at high temperatures, increasing the infiltration depth of the ALD precursor into the photoactive layer. Furthermore, based on previous investigations, the intrinsic permeation properties of the inorganic layers deposited by plasma-assisted ALD were predicted from the nano-porosity content as measured by EP and found to be in the 10-6 gm-2 d-1 range. Insight from our studies was used to design and fabricate multilayer barriers synthesized at near-room temperature by plasma-assisted ALD in combination with plasma-enhanced CVD onto organic photovoltaic (OPVs) devices. Encapsulated OPVs displayed shelf-lifetimes up to 1400 h at ambient conditions.« less

Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Porro, Samuele, E-mail: samuele.porro@polito.it; Conti, Daniele; Guastella, Salvatore

2016-01-15

Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO{sub 2} thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such asmore » self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO{sub 2} thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO{sub 2} thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications.« less

Late Pleistocene environments of the western Noatak basin, northwestern Alaska

USGS Publications Warehouse

Elias, S.A.; Hamilton, T.D.; Edwards, M.E.; Beget, J.E.; Krumhardt, A.P.; Lavoie, C.

1999-01-01

Glacial Lake Noatak formed repeatedly during middle and late Pleistocene time as expanding glaciers from the DeLong Mountains blocked the Noatak River valley. Downcutting by the Noatak River has exposed thick sediment successions in bluffs up to 86 m high. Two river bluffs, Nk-26 and Nk-29A, contain correlative organic-rich flood-plain deposits that were formed during and after deposition of the Old Crow tephra at about the transition between oxygen isotope stage 6 and oxygen isotope stage 5, at the beginning of the last interglaciation. Both bluffs also contain older interglacial or interstadial flood-plain deposits of uncertain age. Pollen and beetle remains were recovered from the older and younger flood-plain deposits at each bluff. Pollen from the younger flood-plain deposits suggests tundra vegetation with local dominance of sedge. Juniperus abundances were locally high, especially around the time of Old Crow tephra deposition. Mutual climatic range (MCR) estimates from the insect fossil assemblages suggest that mean summer temperatures (Tmax) near the time of Old Crow tephra deposition were about 2 ??C colder than modern; mean winter temperatures were very similar to those of today. A younger sample from the same interglacial deposit yielded a Tmax estimate of 2 ??C warmer than modern, signaling interglacial warming. Pollen from the older interglacial deposit at Nk-29A suggests mesic tundra, with boreal forest more distant than it is today. MCR analysis of a possibly correlative older interglacial deposit at Nk-26 suggests a Tmax about 2 ??C below present.

Process parameter-growth environment-film property relationships for reactive sputter deposited metal (V, Nb, Zr, Y, Au) oxide, nitride, and oxynitride films. Final report, 1 January 1989-30 June 1993

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aita, C.R.

1993-09-30

The research developed process parameter-growth environment-film property relations (phase maps) for model sputter-deposited transition metal oxides, nitrides, and oxynitrides grown by reactive sputter deposition at low temperature. Optical emission spectrometry was used for plasma diagnostics. The results summarized here include the role of sputtered metal-oxygen molecular flux in oxide film growth; structural differences in highest valence oxides including conditions for amorphous growth; and using fundamental optical absorption edge features to probe short range structural disorder. Eight appendices containing sixteen journal articles are included.

INFRARED AND ULTRAVIOLET SPECTRA OF METHANE DILUTED IN SOLID NITROGEN AND IRRADIATED WITH ELECTRONS DURING DEPOSITION AT VARIOUS TEMPERATURES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chin, Chih-Hao; Chen, Sian-Cong; Liu, Meng-Chen

We recorded the infrared and ultraviolet absorption spectra of CH{sub 4}:N{sub 2} matrix samples that underwent electron bombardment during deposition in the temperature range of 10–44 K. In contrast to a previous experiment on the IR spectroscopy of electron-bombarded icy samples, methyl and azide radicals became the main products upon electron bombardment during deposition; furthermore, reduced production of nitrile species was observed for deposition at 10 and 20 K. On the other hand, for deposition above 33 K, the observed bands of the radical species (such as methyl and azide) decreased, and bands of large nitriles appeared. This observation maymore » suggest that radical species easily diffuse and recombine to form more complex molecules in solid nitrogen at higher temperatures. Further measurements of similar samples at 10–33 K in the UV region revealed the intense band of azide radicals at 272.5 nm and weak, broad, overlapping features of methyl and azide radicals in the 225–197 nm region. For deposition at 44 K, only a broad feature centered at 219.4 nm was observed, and the possible carriers of nitrile species were proposed based on the corresponding IR spectrum and theoretical predictions of excitation energy. This band is similar to the observed absorption feature of Pluto’s surface recorded by the Hubble telescope in terms of both band position and bandwidth. Our findings therefore further support the suggestion that complex nitrile species may exist on the surface of Pluto.« less

Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications.

PubMed

Reynolds, Glyn J; Kratzer, Martin; Dubs, Martin; Felzer, Heinz; Mamazza, Robert

2012-04-10

New apparatus and a new process for the sputter deposition of modified barium titanate thin-films were developed. Films were deposited at temperatures up to 900 °C from a Ba₀ .96 Ca 0. 04 Ti 0. 82 Zr 0. 18 O₃ (BCZTO) target directly onto Si, Ni and Pt surfaces and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Film texture and crystallinity were found to depend on both deposition temperature and substrate: above 600 °C, the as-deposited films consisted of well-facetted crystallites with the cubic perovskite structure. A strongly textured Pt (111) underlayer enhanced the (001) orientation of BCZTO films deposited at 900 °C, 10 mtorr pressure and 10% oxygen in argon. Similar films deposited onto a Pt (111) textured film at 700 °C and directly onto (100) Si wafers showed relatively larger (011) and diminished intensity (00ℓ) diffraction peaks. Sputter ambients containing oxygen caused the Ni underlayers to oxidize even at 700 °C: Raising the process temperature produced more diffraction peaks of NiO with increased intensities. Thin-film capacitors were fabricated using ~500 nm thick BCZTO dielectrics and both Pt and Ni top and bottom electrodes. Small signal capacitance measurements were carried out to determine capacitance and parallel resistance at low frequencies and from these data, the relative permittivity (e r ) and resistivity (r) of the dielectric films were calculated; values ranged from ~50 to >2,000, and from ~10⁴ to ~10 10 Ω∙cm, respectively.

Inverse bilayer magnetoelectric thin film sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yarar, E.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de

2016-07-11

Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz{sup 1/2} in the mechanical resonance. These sensors are comprised of a Si/SiO{sub 2}/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhancedmore » by almost an order of magnitude reaching 400 fT/Hz{sup 1/2} at the mechanical resonance of the sensor. Giant ME coefficients (α{sub ME}) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allendorf, M.D.; Arsenlis, A.; Bastasz, R.

Titanium nitride (TiN) films deposited by chemical vapor deposition (CVD) techniques are of interest for a wide range of commercial applications. In this report, the authors describe a mechanism that predicts Tin film growth rates from TiCl{sub 4}/NH{sub 3} mixtures as a function of process parameters, including inlet reactant concentrations, substrate temperatures, reactor pressures, and total gas flow rates. Model predictions were verified by comparison with the results of TiN deposition experiments in the literature and with measurements made in a new stagnation-flow reactor developed for the purpose of testing deposition mechanisms such as this. In addition, they describe abmore » initio calculations that predict thermodynamic properties for titanium-containing compounds. The results of calculations using Moeller-Plesset perturbation theory, density functional theory, and coupled cluster theory are encouraging and suggest that these methods can be used to estimate thermodynamic data that are essential for the development of CVD models involving transition-metal compounds. Finally, measurements of the adsorption and desorption kinetics of NH{sub 3} on TiN films using temperature-programmed desorption are described and their relevance to TiN CVD and mechanism development are discussed.« less

Atmospheric deposition of polychlorinated dibenzo-p-dioxins, polychlorinated dibenzofurans, and dioxin-like polychlorinated biphenyls in the Kanto Region, Japan.

PubMed

Ogura, I; Masunaga, S; Nakanishi, J

2001-09-01

The atmospheric bulk (dry and wet) deposition of dioxins was investigated at four locations (Tokyo, Yokohama, Tsukuba, and Tanzawa) in the Kanto region (in Japan) over one year using a stainless-steel pot. Annual average polychlorinated dibenzo-p-dioxins/polychlorinated dibenzofurans (PCDD/PCDF) deposition fluxes were estimated to be from 450 to 1300 ng/m2/yr, and the annual average TEQ fluxes from 5.7 to 17 ng-TEQ/m2/yr at the four locations. The PCDD/PCDF deposition flux was higher in winter than in summer. The deposition flux could be related to ambient temperature, particularly for less chlorinated PCDDs/PCDFs, while the deposition flux is not necessarily related to the amount of precipitation. The PCDD/PCDF deposition flux increased as the particle deposition flux increased, for the winter samples. Based on the ratio of the PCDD/PCDF deposition fluxes to the particle deposition fluxes, the contribution of the reentrainment of soil particles to the TEQ of PCDD/PCDF deposition was considered to be negligible in this region. Based on the air concentrations monitored near our deposition sampling points by the municipalities, the ratio of the annual deposition flux to the annual average air concentration was roughly estimated to be 0.082 cm/s. The range of deposition flux in the Kanto region was estimated to be from 1.5 to 31 (median: 9.8) ng-TEQ/m2/yr based on the range of air concentration data measured by the municipalities. The total annual deposition flux in the entire Kanto region was estimated to range from 50 to 900 g-TEQ/yr (median 320 g-TEQ/yr). This estimated flux was of the same order as the sum of estimated emissions from municipal solid waste incinerators and industrial waste incinerators in the Kanto region. The contributions of dioxin-like PCBs in Yokohama, Tsukuba, and Tanzawa depositions were less than 10% of the total TEQ; however, in Tokyo it was almost equal to or more than 50%.

Research into the feasibility of metal- and oxide-film capacitors

NASA Technical Reports Server (NTRS)

Jorgenson, G. V.; Larson, H. W.

1973-01-01

Thin film capacitors with up to twenty-two active layers have been deposited by RF sputtering. The materials were aluminum electrodes of 1200 to 1500 angstrom thickness and silica dielectric layers of 3000 to 6000 angstrom thickness. The best electrical characteristics were capacitances of nearly 0.1 microfarad for an active area of 1.25 square centimeters, dissipation factor of less than 0.01 over a frequency range of 0.5 to 100 kilohertz and energy density of approximately 70 millijoules per cubic centimeter of active deposited material at a working voltage of 40 volts. These aluminum-silica capacitors exhibit excellent electrical stability over a temperature range from -55 C to +300 C.

Low temperature deposition of nanocrystalline silicon carbide films by plasma enhanced chemical vapor deposition and their structural and optical characterization

NASA Astrophysics Data System (ADS)

Rajagopalan, T.; Wang, X.; Lahlouh, B.; Ramkumar, C.; Dutta, Partha; Gangopadhyay, S.

2003-10-01

Nanocrystalline silicon carbide (SiC) thin films were deposited by plasma enhanced chemical vapor deposition technique at different deposition temperatures (Td) ranging from 80 to 575 °C and different gas flow ratios (GFRs). While diethylsilane was used as the source for the preparation of SiC films, hydrogen, argon and helium were used as dilution gases in different concentrations. The effects of Td, GFR and dilution gases on the structural and optical properties of these films were investigated using high resolution transmission electron microscope (HRTEM), micro-Raman, Fourier transform infrared (FTIR) and ultraviolet-visible optical absorption techniques. Detailed analysis of the FTIR spectra indicates the onset of formation of SiC nanocrystals embedded in the amorphous matrix of the films deposited at a temperature of 300 °C. The degree of crystallization increases with increasing Td and the crystalline fraction (fc) is 65%±2.2% at 575 °C. The fc is the highest for the films deposited with hydrogen dilution in comparison with the films deposited with argon and helium at the same Td. The Raman spectra also confirm the occurrence of crystallization in these films. The HRTEM measurements confirm the existence of nanocrystallites in the amorphous matrix with a wide variation in the crystallite size from 2 to 10 nm. These results are in reasonable agreement with the FTIR and the micro-Raman analysis. The variation of refractive index (n) with Td is found to be quite consistent with the structural evolution of these films. The films deposited with high dilution of H2 have large band gap (Eg) and these values vary from 2.6 to 4.47 eV as Td is increased from 80 to 575 °C. The size dependent shift in the Eg value has also been investigated using effective mass approximation. Thus, the observed large band gap is attributed to the presence of nanocrystallites in the films.

Synthesis and tribological properties of diamond-like carbon films by electrochemical anode deposition

NASA Astrophysics Data System (ADS)

Li, Yang; Zhang, GuiFeng; Hou, XiaoDuo; Deng, DeWei

2012-06-01

Diamond-like carbon films (DLC) are deposited on Ti substrate by electrochemical anodic deposition at room temperature in pure methanol solution using a pulsed DC voltage at a range from 200 V to 2000 V. Raman spectroscopy analysis of the films reveals two broaden characteristic absorption peaks centred at ˜1350 cm-1 and 1580 cm-1, relating to D- and G-band of typical DLC films, respectively. A broad peak centred at 1325-1330 cm-1 is observed when an applied potential is 1200 V, which can confirm that the deposited films contained diamond structure phase. Tribological properties of the coated Ti substrates have been measured by means of a ball-on-plate wear test machine. A related growth mechanism of DLC films by the anodic deposition mode has also been discussed.

Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which itsmore » resistivity is 5.36 × 10{sup 4} Ωcm{sup −1}. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Atmospheric deposition of polycyclic aromatic hydrocarbons (PAHs) in Shanghai: the spatio-temporal variation and source identification

NASA Astrophysics Data System (ADS)

Cheng, Chen; Bi, Chunjuan; Wang, Dongqi; Yu, Zhongjie; Chen, Zhenlou

2018-03-01

This study investigated the dry and wet deposition fluxes of atmospheric polycyclic aromatic hydrocarbons (PAHs) in Shanghai, China. The flux sources were traced based on composition and spatio-temporal variation. The results show that wet deposition concentrations of PAHs ranged from 0.07 to 0.67 mg·L-1 and were correlated with temperature ( P<0.05). Dry deposition of PAHs concentrations ranged from 3.60-92.15 mg·L-1 and were higher in winter and spring than in summer and autumn. The annual PAH average fluxes were 0.631 mg·m-2·d-1 and 4.06 mg·m-2·d-1 for wet and dry deposition, respectively. The highest wet deposition of PAH fluxes was observed in summer, while dry deposition fluxes were higher in winter and spring. Atmospheric PAHs were deposited as dry deposition in spring and winter, yet wet deposition was the dominant pathway during summer. Total atmospheric PAH fluxes were higher in the northern areas than in the southern areas of Shanghai, and were also observed to be higher in winter and spring. Annual deposition of atmospheric PAHs was about 10.8 t in across all of Shanghai. Wet deposition of PAHs was primarily composed of two, three, or four rings, while dry deposition of PAHs was composed of four, five, or six rings. The atmospheric PAHs, composed of four, five, or six rings, primarily existed in the form of particulates. Coal combustion and vehicle emissions were the dominant sources of PAH in the observed area of downtown Shanghai. In suburban areas, industrial pollution, from sources such as coke oven, incinerator, and oil fired power plant, was as significant as vehicle emissions in contributing to the deposition of PAHs.

Constraints on the formation and properties of a Martian lobate debris apron: Insights from high-resolution topography, SHARAD radar data, and a numerical ice flow model

NASA Astrophysics Data System (ADS)

Parsons, Reid; Holt, John

2016-03-01

Lobate debris aprons (LDAs) are midlatitude deposits of debris-covered ice formed during one or more periods of glaciation during the Amazonian period. However, little is known about the climate conditions that led to LDA formation. We explore a hypothesis in which a single, extended period of precipitation of ice on the steep slopes of Euripus Mons (45°S, 105°E—east of the Hellas Basin) produced a flowing ice deposit which was protected from subsequent ablation to produce the LDA found at this location. We test this hypothesis with a numerical ice flow model using an ice rheology based on low-temperature ice deformation experiments. The model simulates ice accumulation and flow for the northern and southern lobes of the Euripus Mons LDA using basal topography constrained by data from the Shallow Radar (SHARAD) and a range of ice viscosities (determined by ice temperature and ice grain size). Simulations for the northern lobe of the Euripus LDA produce good fits to the surface topography. Assuming an LDA age of ˜60 Myr and an expected temperature range of 200 to 204 K (for various obliquities) gives an ice grain size of ≈2 mm. Simulations of the southern section produce poor fits to surface topography and result in much faster flow timescales unless multiple ice deposition events or higher ice viscosities are considered.

Transport properties and c/a ratio of V{sub 2}O{sub 3} thin films grown on C- and R-plane sapphire substrates by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakai, Joe; Limelette, Patrice; Funakubo, Hiroshi

2015-12-14

We prepared V{sub 2}O{sub 3} thin films on C- or R-plane sapphire (Al{sub 2}O{sub 3}) substrates by a pulsed laser deposition method. X-ray diffraction analyses confirmed that single-phase V{sub 2}O{sub 3} films were epitaxially grown on both C- and R-planes under an Ar gas ambient of 2 × 10{sup −2} mbar at a substrate temperature of 873 K. Depending on the deposition conditions, c/a ratios at room temperature of (0001)-oriented V{sub 2}O{sub 3} films widely ranged from 2.79 to 2.88. Among them, the films of 2.81 ≤ c/a ≤ 2.84 showed complex metal (M)–insulator (I)–M transition during cooling from 300 to 10 K, while those of larger c/a ratiosmore » were accompanied by metallic properties throughout this temperature range. All the films on R-plane substrates underwent simple M-I transition at ∼150 K, which was more abrupt than the films on C-plane, whereas their c/a ratios were narrowly distributed. The distinct difference of M-I transition properties between C- and R-plane films is explained by the intrinsic a- and c-axes evolution through the transition from M to I phases.« less

Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

NASA Astrophysics Data System (ADS)

Hassanien, A. S.; Akl, Alaa A.

2016-01-01

Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

Synthesis and electronic properties of Fe 2TiO 5 epitaxial thin films

DOE PAGES

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; ...

2018-05-02

Here, we investigate the growth phase diagram of pseudobrookite Fe 2TiO 5 epitaxial thin films on LaAlO 3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe 2O 3, making Fe 2TiO 5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe 2TiO 5 in oxide heterostructures for photocatalytic and photoelectrochemicalmore » applications.« less

Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

NASA Astrophysics Data System (ADS)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

2018-05-01

We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20-80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

Thermoelectric properties of in-situ plasma spray synthesized sub-stoichiometry TiO2-x.

PubMed

Lee, Hwasoo; Han, Su Jung; Chidambaram Seshadri, Ramachandran; Sampath, Sanjay

2016-11-04

The thermoelectric properties of sub-stoichiometric TiO 2-x deposits produced by cascaded-plasma spray process are investigated from room-temperature to 750 K. Sub-stoichiometric TiO 2-x deposits are formed through in-situ reaction of the TiO 1.9 within the high temperature plasma flame and manipulated through introduction of varying amounts of hydrogen in the plasma. Although the TiO 2-x particles experience reduction within plasma, it can also re-oxidize through interaction with the surrounding ambient atmosphere, resulting in a complex interplay between process conditions and stoichiometry. The deposits predominantly contain rutile phase with presence of Magneli phases especially under significantly reducing plasma conditions. The resultant deposits show sensitivity to thermoelectric properties and under certain optimal conditions repeatedly show Seebeck coefficients reaching values of -230 μV K -1 at temperatures of 750 K while providing an electrical conductivity of 5.48 × 10 3  S m -1 , relatively low thermal conductivity in the range of 1.5 to 2 W m -1 K -1 resulting in power factor of 2.9 μW cm -1 K -2 . The resultant maximum thermoelectric figure of merit value reached 0.132 under these optimal conditions. The results point to a potential pathway for a large-scale fabrication of low-cost oxide based thermoelectric with potential applicability at moderate to high temperatures.

In-situ characterization of the optical and electronic properties in GeTe and GaSb thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velea, A.; Popescu, M.; Galca, A. C., E-mail: ac-galca@infim.ro

2015-10-07

GeTe and GaSb thin films obtained by pulsed laser deposition were investigated by spectroscopic ellipsometry at controlled temperatures. The GeTe films were fully amorphous, while the GaSb films were partially crystalized in the as-deposited state. The Tauc-Lorentz model was employed to fit the experimental data. From the temperature study of the optical constants, it was observed the crystallization in the 150–160 °C range of GeTe amorphous films and between 230 and 240 °C of GaSb amorphous phase. A second transition in the resonance energy and the broadening parameter of the Lorentz oscillator was observed due to the crystallization of Sb after 250 °C.more » The temperatures of 85 °C and 130 °C are noticed as the start of the relaxation of the amorphous GeTe phase and as-deposited GaSb. The peaks of the imaginary part of the dielectric function red shifted after the phase change, while the variation with temperature of the crystalline phase follows the Varshni law. The electron-phonon coupling constants are 2.88 and 1.64 for c-GeTe and c-GaSb, respectively. An optical contrast up to 60% was obtained for GeTe films and a maximum value of 7.5% is revealed in the case GaSb, which is altered by the partial crystallinity of the as-deposited films.« less

The stability of hydrogen ion and specific conductance in filtered wet-deposition samples stored at ambient temperatures

USGS Publications Warehouse

Gordon, J.D.; Schroder, L.J.; Morden-Moore, A. L.; Bowersox, V.C.

1995-01-01

Separate experiments by the U.S. Geological Survey (USGS) and the Illinois State Water Survey Central Analytical Laboratory (CAL) independently assessed the stability of hydrogen ion and specific conductance in filtered wet-deposition samples stored at ambient temperatures. The USGS experiment represented a test of sample stability under a diverse range of conditions, whereas the CAL experiment was a controlled test of sample stability. In the experiment by the USGS, a statistically significant (?? = 0.05) relation between [H+] and time was found for the composited filtered, natural, wet-deposition solution when all reported values are included in the analysis. However, if two outlying pH values most likely representing measurement error are excluded from the analysis, the change in [H+] over time was not statistically significant. In the experiment by the CAL, randomly selected samples were reanalyzed between July 1984 and February 1991. The original analysis and reanalysis pairs revealed that [H+] differences, although very small, were statistically different from zero, whereas specific-conductance differences were not. Nevertheless, the results of the CAL reanalysis project indicate there appears to be no consistent, chemically significant degradation in sample integrity with regard to [H+] and specific conductance while samples are stored at room temperature at the CAL. Based on the results of the CAL and USGS studies, short-term (45-60 day) stability of [H+] and specific conductance in natural filtered wet-deposition samples that are shipped and stored unchilled at ambient temperatures was satisfactory.

Thermoelectric properties of in-situ plasma spray synthesized sub-stoichiometry TiO2−x

PubMed Central

Lee, Hwasoo; Han, Su Jung; Chidambaram Seshadri, Ramachandran; Sampath, Sanjay

2016-01-01

The thermoelectric properties of sub-stoichiometric TiO2−x deposits produced by cascaded-plasma spray process are investigated from room-temperature to 750 K. Sub-stoichiometric TiO2−x deposits are formed through in-situ reaction of the TiO1.9 within the high temperature plasma flame and manipulated through introduction of varying amounts of hydrogen in the plasma. Although the TiO2−x particles experience reduction within plasma, it can also re-oxidize through interaction with the surrounding ambient atmosphere, resulting in a complex interplay between process conditions and stoichiometry. The deposits predominantly contain rutile phase with presence of Magneli phases especially under significantly reducing plasma conditions. The resultant deposits show sensitivity to thermoelectric properties and under certain optimal conditions repeatedly show Seebeck coefficients reaching values of −230 μV K−1 at temperatures of 750 K while providing an electrical conductivity of 5.48 × 103 S m−1, relatively low thermal conductivity in the range of 1.5 to 2 W m−1 K−1 resulting in power factor of 2.9 μW cm−1 K−2. The resultant maximum thermoelectric figure of merit value reached 0.132 under these optimal conditions. The results point to a potential pathway for a large-scale fabrication of low-cost oxide based thermoelectric with potential applicability at moderate to high temperatures. PMID:27811954

Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

PubMed Central

Kneiβ, Max; Lorenz, Michael

2016-01-01

A degenerate p-type conduction of cuprous iodide (CuI) thin films is achieved at the iodine-rich growth condition, allowing for the record high room-temperature conductivity of ∼156 S/cm for as-deposited CuI and ∼283 S/cm for I-doped CuI. At the same time, the films appear clear and exhibit a high transmission of 60–85% in the visible spectral range. The realization of such simultaneously high conductivity and transparency boosts the figure of merit of a p-type TC: its value jumps from ∼200 to ∼17,000 MΩ−1. Polycrystalline CuI thin films were deposited at room temperature by reactive sputtering. Their electrical and optical properties are examined relative to other p-type transparent conductors. The transport properties of CuI thin films were investigated by temperature-dependent conductivity measurements, which reveal a semiconductor–metal transition depending on the iodine/argon ratio in the sputtering gas. PMID:27807139

Forced transport of thermal energy in magmatic and phreatomagmatic large volume ignimbrites: Paleomagnetic evidence from the Colli Albani volcano, Italy

NASA Astrophysics Data System (ADS)

Trolese, Matteo; Giordano, Guido; Cifelli, Francesca; Winkler, Aldo; Mattei, Massimo

2017-11-01

Few studies have detailed the thermal architecture of large-volume pyroclastic density current deposits, although such work has a clear importance for understanding the dynamics of eruptions of this magnitude. Here we examine the temperature of emplacement of large-volume caldera-forming ignimbrites related to magmatic and phreatomagmatic eruptions at the Colli Albani volcano, Italy, by using thermal remanent magnetization analysis on both lithic and juvenile clasts. Results show that all the magmatic ignimbrites were deposited at high temperature, between the maximum blocking temperature of the magnetic carrier (600-630 °C) and the glass transition temperature (about 710 °C). Temperature estimations for the phreatomagmatic ignimbrite range between 200 and 400 °C, with most of the clasts emplaced between 200 and 320 °C. Because all the investigated ignimbrites, magmatic and phreatomagmatic, share similar magma composition, volume and mobility, we attribute the temperature difference to magma-water interaction, highlighting its pronounced impact on thermal dissipation, even in large-volume eruptions. The homogeneity of the deposit temperature of each ignimbrite across its areal extent, which is maintained across topographic barriers, suggests that these systems are thermodynamically isolated from the external environment for several tens of kilometers. Based on these findings, we propose that these large-volume ignimbrites are dominated by the mass flux, which forces the lateral transport of mass, momentum, and thermal energy for distances up to tens of kilometers away from the vent. We conclude that spatial variation of the emplacement temperature can be used as a proxy for determining the degree of forced-convection flow.

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

PubMed

Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

2017-06-27

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

Pulsed Laser Deposition of BaCe(sub 0.85)Y(sub 0.15)0(sub 3) FILMS

NASA Technical Reports Server (NTRS)

Dynys, F. W.; Sayir, A.

2006-01-01

Pulsed laser deposition has been used to grow nanostructured BaCe(sub 0.85)Y(sub 0.15)0(sub 3) films. The objective is to enhance protonic conduction by reduction of membrane thickness. Sintered samples and laser targets were prepared by sintering BaCe(sub 0.85)Y(sub 0.15)O(sub 3) powders derived by solid state synthesis. Films 2 to 6 m thick were deposited by KrF excimer laser on Si and porous Al2O3 substrates. Nanocrystalline films were fabricated at deposition temperatures of 600-800 C deg at O2 pressure of 30 mTorr and laser fluence of 1.2 J/cm square. Films were characterized by x-ray diffraction, scanning electron microscopy and electrical impedance spectroscopy. Dense single phase BaCe(sub 0.85)Y((sub 0.15) 0(sub 3) films with a columnar growth morphology is observed, preferred crystal growth was found to be dependent upon deposition temperature and substrate type. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C deg to 900 C deg in moist argon. Electrical conduction of the fabricated films was 1 to 4 orders of magnitude lower than the sintered bulk samples. With respect to the film growth direction, activation energy for electrical conduction is 3 times higher in the perpendicular direction than the parallel direction.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ebert, Jon Llyod

This Small Business Innovative Research (SBIR) Phase I project will demonstrate the feasibility of an innovative temperature control technology for Metal-Organic Chemical Vapor Deposition (MOCVD) process used in the fabrication of Multi-Quantum Well (MQW) LEDs. The proposed control technology has the strong potential to improve both throughput and performance quality of the manufactured LED. The color of the light emitted by an LED is a strong function of the substrate temperature during the deposition process. Hence, accurate temperature control of the MOCVD process is essential for ensuring that the LED performance matches the design specification. The Gallium Nitride (GaN) epitaxymore » process involves depositing multiple layers at different temperatures. Much of the recipe time is spent ramping from one process temperature to another, adding significant overhead to the production time. To increase throughput, the process temperature must transition over a range of several hundred degrees Centigrade many times with as little overshoot and undershoot as possible, in the face of several sources of process disturbance such as changing emissivities. Any throughput increase achieved by faster ramping must also satisfy the constraint of strict temperature uniformity across the carrier so that yield is not affected. SC Solutions is a leading supplier of embedded real-time temperature control technology for MOCVD systems used in LED manufacturing. SC’s Multiple Input Multiple Output (MIMO) temperature controllers use physics-based models to achieve the performance demanded by our customers. However, to meet DOE’s ambitious goals of cost reduction of LED products, a new generation of temperature controllers has to be developed. SC believes that the proposed control technology will be made feasible by the confluence of mathematical formulation as a convex optimization problem, new efficient and scalable algorithms, and the increase in computational power available for real-time control.« less

Experimental characterization and modeling for the growth rate of oxide coatings from liquid solutions of metalorganic precursors by ultrasonic pulsed injection in a cold-wall low-pressure reactor

NASA Astrophysics Data System (ADS)

Krumdieck, Susan Pran

Several years ago, a method for depositing ceramic coatings called the Pulsed-MOCVD system was developed by the Raj group at Cornell University in association with Dr. Harvey Berger and Sono-Tek Corporation. The process was used to produce epitaxial thin films of TiO2 on sapphire substrates under conditions of low pressure, relatively high temperature, and very low growth rate. The system came to CU-Boulder when Professor Raj moved here in 1997. It is quite a simple technique and has several advantages over typical CVD systems. The purpose of this dissertation is two-fold; (1) understand the chemical processes, thermodynamics, and kinetics of the Pulsed-MOCVD technique, and (2) determine the possible applications by studying the film structure and morphology over the entire range of deposition conditions. Polycrystalline coatings of ceramic materials were deposited on nickel in the low-pressure, cold-wall reactor from metalorganic precursors, titanium isopropoxide, and a mixture of zirconium isopropoxide and yttria isopropoxide. The process utilized pulsed liquid injection of a dilute precursor solution with atomization by ultrasonic nozzle. Thin films (less than 1mum) with fine-grained microstructure and thick coatings (up to 1mum) with columnar-microstructure were deposited on heated metal substrates by thermal decomposition of a single liquid precursor. The influence of each of the primary deposition parameters, substrate temperature, total flow rate, and precursor concentration on growth rate, conversion efficiency and morphology were investigated. The operating conditions were determined for kinetic, mass transfer, and evaporation process control regimes. Kinetic controlled deposition was found to produce equiaxed morphology while mass transfer controlled deposition produced columnar morphology. A kinetic model of the deposition process was developed and compared to data for deposition of TiO2 from Ti(OC3H7) 4 precursor. The results demonstrate that growth rate and morphology over the range of process operating conditions would make the Pulsed-MOCVD system suitable for application of thermal barrier coatings, electrical insulating layers, corrosion protection coatings, and the electrolyte layers in solid oxide fuel cells.

Cooling, degassing and compaction of rhyolitic ash flow tuffs: a computational model

USGS Publications Warehouse

Riehle, J.R.; Miller, T.F.; Bailey, R.A.

1995-01-01

Previous models of degassing, cooling and compaction of rhyolitic ash flow deposits are combined in a single computational model that runs on a personal computer. The model applies to a broader range of initial and boundary conditions than Riehle's earlier model, which did not integrate heat and mass flux with compaction and which for compound units was limited to two deposits. Model temperatures and gas pressures compare well with simple measured examples. The results indicate that degassing of volatiles present at deposition occurs within days to a few weeks. Compaction occurs for weeks to two to three years unless halted by devitrification; near-emplacement temperatures can persist for tens of years in the interiors of thick deposits. Even modest rainfall significantly chills the upper parts of ash deposits, but compaction in simple cooling units ends before chilling by rainwater influences cooling of the interior of the sheet. Rainfall does, however, affect compaction at the boundaries of deposits in compound cooling units, because the influx of heat from the overlying unit is inadequate to overcome heat previously lost to vaporization of water. Three density profiles from the Matahina Ignimbrite, a compound cooling unit, are fairly well reproduced by the model despite complexities arising from numerous cooling breaks. Uncertainties in attempts to correlate in detail among the profiles may be the result of the non-uniform distribution of individual deposits. Regardless, it is inferred that model compaction is approximately valid. Thus the model should be of use in reconstructing the emplacement history of compound ash deposits, for inferring the depositional environments of ancient deposits and for assessing how long deposits of modern ash flows are capable of generating phreatic eruptions or secondary ash flows. ?? 1995 Springer-Verlag.

Activation energy for diamond growth from the carbon-hydrogen gas system at low substrate temperatures

NASA Astrophysics Data System (ADS)

Stiegler, J.; Lang, T.; von Kaenel, Y.; Michler, J.; Blank, E.

1997-01-01

The growth kinetics of diamond films deposited at low substrate temperatures (600-400 °C) from the carbon-hydrogen gas system have been studied. When the substrate temperature alone was varied, independently of all other process parameters in the microwave plasma reactor, an activation energy in the order of 7 kcal/mol was observed. This value did not change with different carbon concentrations in hydrogen. It is supposed that growth kinetics in this temperature range are controlled by a single chemical reaction, probably the abstraction of surface bonded hydrogen by gas phase atomic hydrogen.

Physical vapor deposition as a route to glasses with liquid crystalline order

NASA Astrophysics Data System (ADS)

Gomez, Jaritza

Physical vapor deposition (PVD) is an effective route to prepare glasses with a unique combination of properties. Substrate temperatures near the glass transition (Tg) and slow deposition rates can access enhanced mobility at the surface of the glass allowing molecules at the surface additional time to sample different molecular configurations. The temperature of the substrate can be used to control molecular mobility during deposition and properties in the resulting glasses such as higher density, kinetic stability and preferential molecular orientation. PVD was used to prepare glasses of itraconazole, a smectic A liquid crystal. We characterized molecular orientation using infrared and ellipsometry. Molecular orientation can be controlled by choice of Tsubstrate in a range of temperatures near Tg. Glasses deposited at Tsubstrate = Tg show nearly vertical molecular orientation relative to the substrate; at lower Tsubstrate, molecules are nearly parallel to the substrate. The molecular orientation depends on the temperature of the substrate during preparation and not on the molecular orientation of the underlying layer. This allows preparing samples of layers with differing orientations. We find these glasses are homogeneous solids without evidence of domain boundaries and are molecularly flat. We interpret the combination of properties obtained for vapor-deposited glasses of itraconazole to result from a process where molecular orientation is determined by the structure and dynamics at the free surface of the glass during deposition. We report the thermal and structural properties of glasses prepared using PVD of a rod-like molecule, posaconazole, which does not show equilibrium liquid crystal phases. These glasses show substantial molecular orientation that can be controlled by choice of Tsubstrate during deposition. Ellipsometry and IR indicate that glasses prepared at Tg - 3 K are highly ordered. At these Tsubstrate, molecules show preferential vertical orientation and orientation is similar to that measured in aligned nematic liquid crystal. Our results are consistent with a recently proposed mechanism where molecular orientation in equilibrium liquids can be trapped in PVD glasses and suggest that the orientation at the free surface of posaconazole is nematic-like. In addition, we show posaconazole glasses show high kinetic stability controlled by Tsubstrate.

Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies.

PubMed

Faraz, Tahsin; van Drunen, Maarten; Knoops, Harm C M; Mallikarjunan, Anupama; Buchanan, Iain; Hausmann, Dennis M; Henri, Jon; Kessels, Wilhelmus M M

2017-01-18

The advent of three-dimensional (3D) finFET transistors and emergence of novel memory technologies place stringent requirements on the processing of silicon nitride (SiN x ) films used for a variety of applications in device manufacturing. In many cases, a low temperature (<400 °C) deposition process is desired that yields high quality SiN x films that are etch resistant and also conformal when grown on 3D substrate topographies. In this work, we developed a novel plasma-enhanced atomic layer deposition (PEALD) process for SiN x using a mono-aminosilane precursor, di(sec-butylamino)silane (DSBAS, SiH 3 N( s Bu) 2 ), and N 2 plasma. Material properties have been analyzed over a wide stage temperature range (100-500 °C) and compared with those obtained in our previous work for SiN x deposited using a bis-aminosilane precursor, bis(tert-butylamino)silane (BTBAS, SiH 2 (NH t Bu) 2 ), and N 2 plasma. Dense films (∼3.1 g/cm 3 ) with low C, O, and H contents at low substrate temperatures (<400 °C) were obtained on planar substrates for this process when compared to other processes reported in the literature. The developed process was also used for depositing SiN x films on high aspect ratio (4.5:1) 3D trench nanostructures to investigate film conformality and wet-etch resistance (in dilute hydrofluoric acid, HF/H 2 O = 1:100) relevant for state-of-the-art device architectures. Film conformality was below the desired levels of >95% and attributed to the combined role played by nitrogen plasma soft saturation, radical species recombination, and ion directionality during SiN x deposition on 3D substrates. Yet, very low wet-etch rates (WER ≤ 2 nm/min) were observed at the top, sidewall, and bottom trench regions of the most conformal film deposited at low substrate temperature (<400 °C), which confirmed that the process is applicable for depositing high quality SiN x films on both planar and 3D substrate topographies.

The coupled geochemistry of Au and As in pyrite from hydrothermal ore deposits

NASA Astrophysics Data System (ADS)

Deditius, Artur P.; Reich, Martin; Kesler, Stephen E.; Utsunomiya, Satoshi; Chryssoulis, Stephen L.; Walshe, John; Ewing, Rodney C.

2014-09-01

The ubiquity of Au-bearing arsenian pyrite in hydrothermal ore deposits suggests that the coupled geochemical behaviour of Au and As in this sulfide occurs under a wide range of physico-chemical conditions. Despite significant advances in the last 20 years, fundamental factors controlling Au and As ratios in pyrite from ore deposits remain poorly known. Here we explore these constraints using new and previously published EMPA, LA-ICP-MS, SIMS, and μ-PIXE analyses of As and Au in pyrite from Carlin-type Au, epithermal Au, porphyry Cu, Cu-Au, and orogenic Au deposits, volcanogenic massive sulfide (VHMS), Witwatersrand Au, iron oxide copper gold (IOCG), and coal deposits. Pyrite included in the data compilation formed under temperatures from ∼30 to ∼600 °C and in a wide variety of geological environments. The pyrite Au-As data form a wedge-shaped zone in compositional space, and the fact that most data points plot below the solid solubility limit defined by Reich et al. (2005) indicate that Au1+ is the dominant form of Au in arsenian pyrite and that Au-bearing ore fluids that deposit this sulfide are mostly undersaturated with respect to native Au. The analytical data also show that the solid solubility limit of Au in arsenian pyrite defined by an Au/As ratio of 0.02 is independent of the geochemical environment of pyrite formation and rather depends on the crystal-chemical properties of pyrite and post-depositional alteration. Compilation of Au-As concentrations and formation temperatures for pyrite indicates that Au and As solubility in pyrite is retrograde; Au and As contents decrease as a function of increasing temperature from ∼200 to ∼500 °C. Based on these results, two major Au-As trends for Au-bearing arsenian pyrite from ore deposits are defined. One trend is formed by pyrites from Carlin-type and orogenic Au deposits where compositions are largely controlled by fluid-rock interactions and/or can be highly perturbed by changes in temperature and alteration by hydrothermal fluids. The second trend consists of pyrites from porphyry Cu and epithermal Au deposits, which are characterised by compositions that preserve the Au/As signature of mineralizing magmatic-hydrothermal fluids, confirming the role of this sulfide in controlling metal ratios in ore systems.

Atomic layer deposition of cerium oxide for potential use in diesel soot combustion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanova, Tatiana V., E-mail: tatiana.ivanova@lut.fi, E-mail: ivanova.tatyana.v@gmail.com; Toivonen, Jenni; Maydannik, Philipp S.

The particulate soot emission from diesel motors has a severe impact on the environment and people's health. The use of catalytic convertors is one of the ways to minimize the emission and decrease the hazard level. In this paper, the activity of cerium oxide for catalytic combustion of diesel soot was studied. Thin films of cerium dioxide were synthesized by atomic layer deposition using tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)cerium [Ce(thd){sub 4}] and ozone as precursors. The characteristics of the films were studied as a function of deposition conditions within the reaction temperature range of 180–350 °C. Thickness, crystallinity, elemental composition, and morphology of the CeO{submore » 2} films deposited on Si (100) were characterized by ellipsometry, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscopy, respectively. The growth rate of CeO{sub 2} was observed to be 0.30 Å/cycle at temperatures up to 250 °C with a slight increase to 0.37 Å/cycle at 300 °C. The effect of CeO{sub 2} films grown on stainless steel foil supports on soot combustion was measured with annealing tests. Based on the analysis of these, in catalytic applications, CeO{sub 2} has been shown to be effective in lowering the soot combustion temperature from 600 °C for the uncoated substrates to 370 °C for the CeO{sub 2} coated ones. It was found that the higher deposition temperatures had a positive effect on the catalyst performance.« less

Characterization of deposits formed on diesel injectors in field test and from thermal oxidative degradation of n-hexadecane in a laboratory reactor

PubMed Central

Venkataraman, Ramya; Eser, Semih

2008-01-01

Solid deposits from commercially available high-pressure diesel injectors (HPDI) were analyzed to study the solid deposition from diesel fuel during engine operation. The structural and chemical properties of injector deposits were compared to those formed from the thermal oxidative stressing of a diesel fuel range model compound, n-hexadecane at 160°C and 450 psi for 2.5 h in a flow reactor. Both deposits consist of polyaromatic compounds (PAH) with oxygen moieties. The similarities in structure and composition of the injector deposits and n-hexadecane deposits suggest that laboratory experiments can simulate thermal oxidative degradation of diesel in commercial injectors. The formation of PAH from n-hexadecane showed that aromatization of straight chain alkanes and polycondensation of aromatic rings was possible at temperatures as low as 160°C in the presence of oxygen. A mechanism for an oxygen-assisted aromatization of cylcoalkanes is proposed. PMID:19091086

Effect of deposition temperature & oxygen pressure on mechanical properties of (0.5) BZT-(0.5)BCT ceramic thin films

NASA Astrophysics Data System (ADS)

Sailaja, P.; Kumar, N. Pavan; Rajalakshmi, R.; Kumar, R. Arockia; Ponpandian, N.; Prabahar, K.; Srinivas, A.

2018-05-01

Lead free ferroelectric thin films of {(0.5) BZT-(0.5) BCT} (termed as BCZT) were deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition at four deposition temperatures 600, 650, 700, 750°C and at two oxygen pressures viz. 75mtorr and 100 mtorr using BCZT ceramic target (prepared by solid state sintering method). The effect of deposition temperature and oxygen pressure on the structure, microstructure and mechanical properties of BCZT films were studied. X-ray diffraction patterns of deposited films confirm tetragonal crystal symmetry and the crystallinity of the films increases with increasing deposition temperature. Variation in BCZT grain growth was observed when the films are deposited at different temperatures andoxygen pressures respectively. The mechanical properties viz. hardness and elastic modulus were also found to be high with increase in the deposition temperature and oxygen pressure. The results will be discussed.

Optimization of pulsed laser deposited ZnO thin-film growth parameters for thin-film transistors (TFT) application

NASA Astrophysics Data System (ADS)

Gupta, Manisha; Chowdhury, Fatema Rezwana; Barlage, Douglas; Tsui, Ying Yin

2013-03-01

In this work we present the optimization of zinc oxide (ZnO) film properties for a thin-film transistor (TFT) application. Thin films, 50±10 nm, of ZnO were deposited by Pulsed Laser Deposition (PLD) under a variety of growth conditions. The oxygen pressure, laser fluence, substrate temperature and annealing conditions were varied as a part of this study. Mobility and carrier concentration were the focus of the optimization. While room-temperature ZnO growths followed by air and oxygen annealing showed improvement in the (002) phase formation with a carrier concentration in the order of 1017-1018/cm3 with low mobility in the range of 0.01-0.1 cm2/V s, a Hall mobility of 8 cm2/V s and a carrier concentration of 5×1014/cm3 have been achieved on a relatively low temperature growth (250 °C) of ZnO. The low carrier concentration indicates that the number of defects have been reduced by a magnitude of nearly a 1000 as compared to the room-temperature annealed growths. Also, it was very clearly seen that for the (002) oriented films of ZnO a high mobility film is achieved.

Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Hejazi, M. M.; Safari, A.

2011-11-01

This paper discusses the electrical conduction mechanisms in a 0.88 Bi0.5Na0.5TiO3-0.08 Bi0.5K0.5TiO3-0.04 BaTiO3 thin film in the temperature range of 200-350 K. The film was deposited on a SrRuO3/SrTiO3 substrate by pulsed laser deposition technique. At all measurement temperatures, the leakage current behavior of the film matched well with the Lampert's triangle bounded by three straight lines of different slopes. The relative location of the triangle sides varied with temperature due to its effect on the density of charge carriers and un-filled traps. At low electric fields, the ohmic conduction governed the leakage mechanism. The calculated activation energy of the trap is 0.19 eV implying the presence of shallow traps in the film. With increasing the applied field, an abrupt increase in the leakage current was observed. This was attributed to a trap-filling process by the injected carriers. At sufficiently high electric fields, the leakage current obeyed the Child's trap-free square law suggesting the space charge limited current was the dominant mechanism.

Matrix effects on secondary ion emission from a room-temperature ionic liquid, 1-ethyl-3-methylimidazolium bis[trifluoromethanesulfonyl]imide

NASA Astrophysics Data System (ADS)

Souda, Ryutaro

2009-06-01

The ionization mechanism of room-temperature ionic liquids has been investigated using time-of-flight secondary ion mass spectrometry in the temperature range of 15-300 K. Analyses of 1-ethyl-3-methylimidazolium bis[trifluoromethanesulfonyl]imide ([emim][Tf2N]) deposited on a Ni(111) substrate revealed that the [emim]+ and [Tf2N]- yields increase together with the Ni+ yield at monolayer coverage; no such increase was observed for the films deposited on a D2O spacer layer. Results indicated that the [emim][Tf2N] molecule is not perfectly ionized; the Ni(111) surface accepts (for [emim]+) or donates (for [Tf2N]-) an electron with higher efficiency than the counterion because of the metal band effect. This phenomenon might be induced by electrostatic interactions between the separated cation and anion during sputtering. It is also suggested that the sputtered Ni atom can be ionized nonadiabatically by the formation of a quasimolecule with adspecies. The multilayer of [emim][Tf2N] deposited at 15 K has a porous structure, resembling that of polar molecules, because of nonionic intermolecular interactions. The phase transition is identifiable, together with the morphological change in the crystalline film, from temperature evolutions of the secondary ion yields.

Atmospheric bulk deposition measurements of organochlorine pesticides at three alpine summits

NASA Astrophysics Data System (ADS)

Jakobi, Gert; Kirchner, Manfred; Henkelmann, Bernhard; Körner, Wolfgang; Offenthaler, Ivo; Moche, Wolfgang; Weiss, Peter; Schaub, Marcus; Schramm, Karl-Werner

2015-01-01

Bulk deposition samples were collected at three elevated summits in different parts of the Alps from 2005 to 2010. Deposition samples were analyzed for a wide range of organochlorine pesticides (OCPs). HCHs, DDT, DDD, DDE, chlordanes, cis-heptachlor, HCB, dieldrin and endrin were found in all samples, only aldrin was found less frequently. Differences in the mean deposition rates between the three sites reflect the different amounts of precipitation at these sites. At the northern edge of the Alps with the highest annual total precipitations, mean annual deposition rates were at least twice those at the Swiss site for most of the investigated OCP. Average annual deposition of α-HCH amounted to 602, 461 and 216 ng m-2 year-1, the sum of DDT, DDD and DDE to 579, 210 and 144 ng m-2 year-1 and the sum of trans- and cis-chlordane to 35, 47, 16 ng m-2 year-1 at Zugspitze, Sonnblick, and Weissfluhjoch, respectively. A quite distinct seasonal pattern of OPC deposition was observed at all three locations. For most of the HCH isomers, higher deposition rates were observed in summer than in winter at all three sites, which may be caused by enhanced re-volatilization due to higher summer temperatures and the ongoing application of HCH-containing products in some regions as well. For the other investigated OCPs, higher summer deposition rates were found only at Weissfluhjoch. This site is more often affected by air masses crossing the river Po basin than the other two sites, an area exhibiting higher summer temperatures compared to other regions adjacent to the Alps.

Combustion chamber struts can be effectively transpiration cooled

NASA Technical Reports Server (NTRS)

Palmer, G. H.

1966-01-01

Vapor-deposited sintering technique increases the feasible temperature range of transpiration-cooled structural members in combustion chambers. This technique produces a porous mass of refractory metal wires around a combustion chamber structural member. This mass acts as a transpiration-cooled surface for a thick-walled tube.

Room Temperature Ferromagnetic Mn:Ge(001).

PubMed

Lungu, George Adrian; Stoflea, Laura Elena; Tanase, Liviu Cristian; Bucur, Ioana Cristina; Răduţoiu, Nicoleta; Vasiliu, Florin; Mercioniu, Ionel; Kuncser, Victor; Teodorescu, Cristian-Mihail

2013-12-27

We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001), heated at relatively high temperature (starting with 250 °C). The samples were characterized by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), superconducting quantum interference device (SQUID), and magneto-optical Kerr effect (MOKE). Samples deposited at relatively elevated temperature (350 °C) exhibited the formation of ~5-8 nm diameter Mn₅Ge₃ and Mn 11 Ge₈ agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe ~2.5 phase, or manganese diluted into the Ge(001) crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm) deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge-Ge dimers on Ge(001). The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

Room Temperature Ferromagnetic Mn:Ge(001)

PubMed Central

Lungu, George Adrian; Stoflea, Laura Elena; Tanase, Liviu Cristian; Bucur, Ioana Cristina; Răduţoiu, Nicoleta; Vasiliu, Florin; Mercioniu, Ionel; Kuncser, Victor; Teodorescu, Cristian-Mihail

2014-01-01

We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001), heated at relatively high temperature (starting with 250 °C). The samples were characterized by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), superconducting quantum interference device (SQUID), and magneto-optical Kerr effect (MOKE). Samples deposited at relatively elevated temperature (350 °C) exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001) crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm) deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001). The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed. PMID:28788444

PREFACE: VI Scientific Technical Conference on "Low-temperature plasma during the deposition of functional coatings"

NASA Astrophysics Data System (ADS)

2014-11-01

The VI Republican Scientific Technical Conference "Low-temperature plasma during the deposition of functional coatings" took place from 4 to 7 November 2014 at the Academy of Sciences of the Republic of Tatarstan and the Kazan Federal University. The conference was chaired by a Member of the Academy of Sciences of the Republic of Tatarstan Nail Kashapov -Professor, Doctor of Technical Sciences- a member of the Scientific and Technical Council of the Ministry of Economy of the Republic of Tatarstan. At the conference, the participants discussed a wide range of issues affecting the theoretical and computational aspects of research problems in the physics and technology of low-temperature plasma. A series of works were devoted to the study of thin films obtained by low-temperature plasma. This year work dedicated to the related field of heat mass transfer in multiphase media and low-temperature plasma was also presented. Of special interest were reports on the exploration of gas discharges with liquid electrolytic electrotrodes and the study of dusty plasmas. Kashapov Nail, D.Sc., Professor (Kazan Federal University)

Size-controlled synthesis of nanocrystalline CdSe thin films by inert gas condensation

NASA Astrophysics Data System (ADS)

Sharma, Jeewan; Singh, Randhir; Kumar, Akshay; Singh, Tejbir; Agrawal, Paras; Thakur, Anup

2018-02-01

Size, shape and structure are considered to have significant influence on various properties of semiconducting nanomaterials. Different properties of these materials can be tailored by controlling the size. Size-controlled CdSe crystallites ranging from ˜ 04 to 95 nm were deposited by inert gas-condensation technique (IGC). In IGC method, by controlling the inert gas pressure in the condensation chamber and the substrate temperature or both, it was possible to produce nanoparticles with desired size. Structure and crystallite size of CdSe thin films were determined from Hall-Williamson method using X-ray diffraction data. The composition of CdSe samples was estimated by X-ray microanalysis. It was confirmed that CdSe thin film with different nanometer range crystallite sizes were synthesized with this technique, depending upon the synthesis conditions. The phase of deposited CdSe thin films also depend upon deposition conditions and cubic to hexagonal phase transition was observed with increase in substrate temperature. The effect of crystallite size on optical and electrical properties of these films was also studied. The crystallite size affects the optical band gap, electrical conductivity and mobility activation of nanocrystalline CdSe thin films. Mobility activation study suggested that there is a quasi-continuous linear distribution of three different trap levels below the conduction band.

Research in the Optical Sciences.

DTIC Science & Technology

1984-10-01

cannot tolerate the high temperatures used for 9 conventional hard MgF, depositions. The ion beam processing led to durable films (in some cases more...sputter epitaxy techniques for the production of high-reflectivity mirrors for near-normal incidence in the x-ray-ultraviolet (X- UV ) wavelength range...codes for X- UV multilayer mirror design, (2) acquisition of a data base of optical constants in this wavelength range, (3) theoretical designs of

Boron isotope systematics of tourmaline formation in the Sullivan Pb-Zn-Ag deposit, British Columbia, Canada

USGS Publications Warehouse

Jiang, S.-Y.; Palmer, M.R.; Slack, J.F.; Shaw, D.R.

1999-01-01

We report here the results of 54 boron isotope analyses of tourmaline associated with the giant Sullivan Pb-Zn-Ag deposit in southeastern British Columbia, Canada. The ??11B values range from -11.1 to -2.9???, which is almost as great as the range found worldwide in tourmalines from 33 massive sulfide deposits and tourmalinites in dominantly clastic metasedimentary terranes. The major control on the overall ??11B values of the Sullivan tourmalinites is the boron source. Potential controls over the large range of the data also include: (1) differences in formation temperatures of the tourmalinites, (2) different stages of tourmaline formation, (3) variations in the proportions of dissolved boron incorporated into the tourmaline (Rayleigh fractionation), (4) seawater entrainment, and (5) post-depositional metamorphism. The boron isotope data at Sullivan are consistent with boron derivation from leaching of footwall clastic sediments. However, the great abundance of tourmaline in the Sullivan deposit suggests that the local clastic sediments were not the sole source of boron, and we argue that non-marine evaporites, buried deep below the orebody, are the most viable source of this additional boron. It is likely that some of the variation in tourmaline ??11B values reflect mixing of boron from these two sources. Comparison of the potential effects of these controls with geologic and other geochemical evidence suggests that major causes for the wide range of ??11B values measured at Sullivan are seawater entrainment and Rayleigh fractionation, although in places, post-depositional alteration and thermal metamorphism were important in determining ??11B values of some of the recrystallized tourmalinites.

Biogas as a fuel for solid oxide fuel cells and synthesis gas production: effects of ceria-doping and hydrogen sulfide on the performance of nickel-based anode materials.

PubMed

Laycock, Christian J; Staniforth, John Z; Ormerod, R Mark

2011-05-28

Numerous investigations have been carried out into the conversion of biogas into synthesis gas (a mixture of H(2) + CO) over Ni/YSZ anode cermet catalysts. Biogas is a variable mixture of gases consisting predominantly of methane and carbon dioxide (usually in a 2 : 1 ratio, but variable with source), with other constituents including sulfur-containing gases such as hydrogen sulfide, which can cause sulfur poisoning of nickel catalysts. The effect of temperature on carbon deposition and sulfur poisoning of 90 : 10 mol% Ni/YSZ under biogas conversion conditions has been investigated by carrying out a series of catalytic reactions of methane-rich (2 : 1) CH(4)/CO(2) mixtures in the absence and presence of H(2)S over the temperature range 750-1000 °C. The effect of ceria-doping on carbon dioxide reforming, carbon deposition and sulfur tolerance has also been investigated by carrying out a similar series of reactions over ceria-doped Ni/YSZ. Ceria was doped at 5 mol% of the nickel content to give an anode catalyst composition of 85.5 : 4.5 : 10 mol% Ni/CeO(2)/YSZ. Reactions were followed using quadrupolar mass spectrometry (QMS) and the amount of carbon deposition was analysed by subjecting the reacted catalyst samples to a post-reaction temperature programmed oxidation (TPO). On undoped Ni/YSZ, carbon deposition occurred predominantly through thermal decomposition of methane. Ceria-doping significantly suppressed methane decomposition and at high temperatures simultaneously promoted the reverse Boudouard reaction, significantly lowering carbon deposition. Sulfur poisoning of Ni/YSZ occurred in two phases, the first of which caused the most activity loss and was accelerated on increasing the reaction temperature, while the second phase had greater stability and became more favourable with increasing reaction temperature. Adding H(2)S significantly inhibited methane decomposition, resulting in much less carbon deposition. Ceria-doping significantly increased the sulfur tolerance of Ni/YSZ, however, in the presence of H(2)S ceria did not promote the reverse Boudouard reaction and at high temperatures carbon deposition was greater over ceria-doped Ni/YSZ. In order to further study the effects of ceria-doping, a solid oxide fuel cell (SOFC) was constructed with a ceria-doped anode cermet and its electrical performance on simulated biogas compared to hydrogen was tested. This fuel cell was subsequently ran for 1000 h on simulated biogas with no degradation in its overall electrical performance.

Device physics of hydrogenated amorphous silicon solar cells

NASA Astrophysics Data System (ADS)

Liang, Jianjun

This dissertation reports measurements on and modeling of hydrogenated amorphous silicon (a-Si:H) nip solar cells. Cells with thicknesses from 200-900 nm were prepared at United Solar Ovonic LLC. The current density-voltage (J-V) relations were measured under laser illumination (685 nm wavelength, up to 200 mW/cm2) over the temperature range 240 K--350 K. The changes in the cells' open-circuit voltage during extended laser illumination (light-soaking) were measured, as were the cell properties in several light-soaked states. The J-V properties of cells in their as-deposited and light-soaked states converge at low-temperatures. Electromodulation spectra for the cells were also measured over the range 240 K--350 K to determine the temperature-dependent bandgap. These experimental results were compared to computer calculations of J-V relations using the AMPS ((c)Pennsylvania State University) computer code. Bandtail parameters (for electron and hole mobility and recombination) were consistent with published drift-mobility and transient photocurrent measurements on a-Si:H. The open-circuit voltage and power density measurements on as-deposited cells, as a function of temperature and thickness, were predicted well. The calculations support a general "hole mobility limited" approach to analyzing a-Si:H solar cells, and indicate that the doped electrode layers, the as-deposited density of dangling bonds, and the electron mobility are of secondary importance to as-deposited cells. For light-soaked a-Si:H solar cells, incorporation of a density of dangling bonds in the computer calculations accounted satisfactorily for the power and open-circuit voltage measurements, including the low-temperature convergence effect. The calculations indicate that, in the light-soaked state at room-temperature, electron recombination is split nearly evenly between holes trapped in the valence bandtail and holes trapped on dangling bonds. The result supports Stutzmann, Jackson, and Tsai's 1985 conjecture that dangling bond creation results only from bandtail recombination events. We compared the predictions of the hydrogen-collision model proposed by Branz with the kinetics of the open-circuit voltage as light-soaking progressed. We obtained satisfactory agreement for the initial phases of light-soaking with the conjecture that only bandtail recombination leads to dangling bond creation, and the computer calculations for this recombination channel's diminishment in the cell as the dangling bond density grows.

Observation of Significant enhancement in the efficiency of a DSSC by InN nanoparticles over TiO 2-nanoparticle films

NASA Astrophysics Data System (ADS)

Wang, Tsai-Te; Raghunath, P.; Lu, Yun-Fang; Liu, Yu-Chang; Chiou, Chwei-Huawn; Lin, M. C.

2011-06-01

We have studied the effect of InN deposited over TiO2 nanoparticle (NP) films on the performance of dye-sensitized solar cells (DSSCs) using N3 dye with I/I3- electrolyte. A 10-20% increase in efficiency was observed for InN deposited, N3 sensitized 5-8.5 μm thick TiO2 films as compared to similar non-treated films. The deposition of InN was carried out in the temperature range of 573-723 K organometallic chemical vapor deposition (OMCVD). Spectral shifts and DFT calculations with a model anchoring group (R‧COOH) both suggest binding of the N3 dye directly to both InN and the InN/TiO2 sites.

ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

DOEpatents

Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

2007-02-20

A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

A multilayer model for inferring dry deposition using standard meteorological measurements

NASA Astrophysics Data System (ADS)

Meyers, Tilden P.; Finkelstein, Peter; Clarke, John; Ellestad, Thomas G.; Sims, Pamela F.

1998-09-01

In this paper, we describe the latest version of the dry deposition inferential model, which is used to estimate the deposition velocities (Vd) for SO2, O3, HNO3, and particles with diameters less than 2 μm. The dry deposition networks operated by the National Oceanic and Atmospheric Administration (NOAA) and the Environmental Protection Agency (EPA) use this model to estimate dry deposition on a weekly basis. This model uses a multilayer approach, discretizing the vegetated canopy into 20 layers. The use of canopy radiative transfer and simple wind profile models allows for estimates of stomatal (rs) and leaf boundary layer (rb) resistances to be determined at each layer in the plant canopy for both sunlit and shaded leaves. The effect of temperature, water stress, and vapor pressure deficits on the stomatal resistance (rs) have been included. Comparisons of modeled deposition velocities are made with extensive direct measurements performed at three different locations with different crops. The field experiment is discussed in some detail. Overall, modeled O3 deposition velocities are in good agreement with measured values with the average mean bias for all surfaces of the order of 0.01 cm/s or less. For SO2, mean biases range from -0.05 for corn to 0.15 cm/s for soybeans, while for HNO3, they range from 0.09 for corn to 0.47 cm/s for pasture.

Silicon-based thin-film transistors with a high stability

NASA Astrophysics Data System (ADS)

Stannowski, Bernd

2002-02-01

Thin-Film Transistors (TFTs) are widely applied as pixel-addressing devices in large-area electronics, such as active-matrix liquid-crystal displays (AMLCDs) or sensor arrays. Hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiNx:H) are generally used as the semiconductor and the insulator layers, respectively. Commonly, Plasma-Enhanced Chemical Vapor Deposition (PECVD) is used to deposit such films on large glass or plastic substrates at rather low substrate temperatures of 200 - 300oC. Even though TFTs are nowadays used in commercial applications, they need further improvement with respect to a number of issues: Firstly, the stability upon prolonged application of a gate voltage results in a shift of the TFT transfer characteristics. This is explained with the metastability of a-Si:H, namely the defect creation in the amorphous channel. This effect hampers the application of TFTs e.g. in the peripheral driver circuitry of AMLCDs and in the addressing matrix of Organic Light-Emitting Diode (OLED) displays. Secondly, the low deposition rate of the silicon limits the throughput in display fabrication. For a further reduction of the production costs higher deposition rates are crucial. This thesis addresses the development and the study of silicon-based TFTs with a high stability. Therefore, a-Si:H and a-SiNx:H films have been deposited with new techniques, alternative to the commonly used PECVD at a discharge frequency of 13.56 MHz. For Very High Frequency (VHF) PECVD we used frequencies in the range of 13.56 - 70 MHz. Furthermore, we deposited layers by Hot-Wire Chemical Vapor Deposition (HWCVD), utilizing heated tantalum or tungsten filaments to decompose the source-gas molecules catalytically. Hot-wire deposited a-SiNx:H layers were developed to be applied as gate insulator. Furthermore, they are promising for passivation purposes, since no surface damaging ion bombardment is present during the deposition. A proof-of-concept for an "All-Hot-Wire TFT" with both the a-Si:H and the a-SiNx:H deposited by HWCVD is presented, yielding a considerable field-effect mobility of 0.3 cm2/Vs. The stability of various a-Si:H TFTs with either plasma a-SiNx:H or thermally grown SiO2 as the gate insulator was investigated by applying constant gate-bias stress of 25 V at temperatures of 20 - 110oC and durations of 10 - 105s. We determined the kinetics of defect-creation in the amorphous silicon by measuring the threshold-voltage shift and merging the data obtained at different stressing temperatures and times to one data set as a function of the "thermalization energy". This scheme was described by Deane et al.. The kinetics follow a stretched hyperbola, which results from dispersive defect creation with an exponential distribution of activation energies. A least-squares fit yields two parameters: kBT0 is the slope of the barrier distribution, with values of (65 ? 3) meV for all TFTs in this stability study. The second parameter, Ea, is interpreted as the "mean activation energy for defect creation". We used it for a comparison of the stability of various TFTs. For VHF-PECVD a-Si:H TFTs, values for Ea were around 0.92 eV and are found to be correlated with the mechanical stress in silicon films: A high value for Ea, thus a high stability, is related to a low compressive stress. For HWCVD a-Si:H the stability clearly increases with increasing deposition temperatures. The highest value being around 1.03 eV is obtained for het-Si:H, deposited at 510?C. From these results we concluded that the stability of a-Si:H is determined by the grade of network relaxation. Higher deposition temperatures result in a more efficient relaxation of the amorphous network. This can be associated with a higher medium-range order. In the case of the plasma-deposited a-Si:H films deposited at one temperature, the relation between Ea and mechanical stress may be a secondary effect, with the mechanical stress being related to the network ordering. In conclusion, HWCVD appears to be an ideal method to deposit highly stable a-Si:H TFTs, since a rather high temperature is combined with an effective hydrogenation, resulting in a-Si:H film with a low and stable defect density.

The deposition of corrosion products in Pb17Li

NASA Astrophysics Data System (ADS)

Barker, Marten G.; Capaldi, Michael J.

1994-09-01

A series of simple deposition tests has been carried out in Pb17Li contained in type 316 stainless steel tubes under a temperature gradient. Two basic types of deposit have been identified from all 316 steel systems. The first type which is dendritic in form is composed mainly of iron and chromium and deposits in the temperature region 673 to 823 K. Deposits at the lower temperature were chromium rich whilst those at the higher temperature were iron-rich. The second type found at temperatures below 623 K shows a temperature dependence being composed of nickel and manganese at 573 K and nickel, iron and chromium at 623 K. Pure nickel only deposits if the alloy is at near saturation in nickel at the highest temperature of the system (873 K). Aluminium mass transfers readily in Pb17Li and in solution causes the formation of aluminide layers on the steel surface in the high temperature zone.

Effect of Pt Nanoparticles on the Optical Gas Sensing Properties of WO3 Thin Films

PubMed Central

Qadri, Muhammad U.; Diaz Diaz, Alex Fabian; Cittadini, Michaela; Martucci, Alessandro; Pujol, Maria Cinta; Ferré-Borrull, Josep; Llobet, Eduard; Aguiló, Magdalena; Díaz, Francesc

2014-01-01

Thin films of tungsten trioxide were deposited on quartz substrates by RF magnetron sputtering. Different annealing temperatures in the range from 423 to 973 K were used under ambient atmosphere. The influence of the annealing temperature on the structure and optical properties of the resulting WO3 thin films were studied. The surface morphology of the films is composed of grains with an average size near 70 nm for the films annealed between 773 and 973 K. Some of the WO3 thin films were also coated with Pt nanoparticles of about 45 nm in size. Spectrometric measurements of transmittance were carried out for both types of WO3 samples in the wavelength range from 200–900 nm, to determine the effect of the exposure to two different gases namely H2 and CO. Films showed fast response and recovery times, in the range of few seconds. The addition of Pt nanoparticles enables reducing the operation temperature to room temperature. PMID:24977386

Evolution of zirconyl-stearate Langmuir monolayers and the synthesized ZrO2 thin films with pH

NASA Astrophysics Data System (ADS)

Choudhary, Raveena; Sharma, Rajni; Brar, Loveleen K.

2018-04-01

ZrO2 thin films have a wide range of applications ranging from photonics, antireflection coatings, and resistive oxygen gas sensors, as a gate dielectric and in high temperature fuel cells. We have used the deposition of zirconyl stearate monolayers followed by their oxidation as a method for the synthesis of zirconium oxide thin films. The zirconyl stearate films have been studied and deposited for first time to the best of our knowledge. The Langmuir monolayers are studied using pressure-Area (π-A) isotherms and oscillatory barrier method. The morphology of the films for limited number of layers was studied with FE-SEM to determine the effect of pH on the final ZrO2 film. The 200 layer deposition films show pure monoclinic phase. The films have a band gap ˜6.0eV with a strong PL emission peak is at 490 nm and a weak peak is at 423 nm. So the films formed by this deposition method are suitable for luminescent applications

Phase Equilibrium of TiO2 Nanocrystals in Flame-Assisted Chemical Vapor Deposition.

PubMed

Liu, Changran; Camacho, Joaquin; Wang, Hai

2018-01-19

Nano-scale titanium oxide (TiO 2 ) is a material useful for a wide range of applications. In a previous study, we showed that TiO 2 nanoparticles of both rutile and anatase crystal phases could be synthesized over the size range of 5 to 20 nm in flame-assisted chemical vapor deposition. Rutile was unexpectedly dominant in oxygen-lean synthesis conditions, whereas anatase is the preferred phase in oxygen-rich gases. The observation is in contrast to the 14 nm rutile-anatase crossover size derived from the existing crystal-phase equilibrium model. In the present work, we made additional measurements over a wider range of synthesis conditions; the results confirm the earlier observations. We propose an improved model for the surface energy that considers the role of oxygen desorption at high temperatures. The model successfully explains the observations made in the current and previous work. The current results provide a useful path to designing flame-assisted chemical vapor deposition of TiO 2 nanocrystals with controllable crystal phases. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films

NASA Astrophysics Data System (ADS)

Tadjer, Marko J.; Wheeler, Virginia D.; Downey, Brian P.; Robinson, Zachary R.; Meyer, David J.; Eddy, Charles R.; Kub, Fritz J.

2017-10-01

Amorphous vanadium oxide (VO2) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 °C for 1-2 h under a low oxygen pressure (10-4 to 10-5 Torr). Under these conditions the crystalline VO2 phase was maintained, while formation of the V2O5 phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 °C range, with an ROFF/RON ratio of up to about 750 and ΔTC ≅ 7-10 °C. Lateral electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO2 sample processed with the 2 h long O2 anneal. Both the width and slope of the field induced MIT I-V hysteresis were dependent upon the VO2 crystalline quality.

Design study of an entry probe spectro-reflectometer

NASA Technical Reports Server (NTRS)

Sill, G. T.; Fink, U.

1986-01-01

A wind tunnel was built to simulate the rapid movement of an entry probe through the Jupiter atmosphere. Wind speeds range from 1 to 50 meters per second in a closed system. Wind velocity and temperature probes as well as a cryogenically cooled cold finger can be placed in the 6 inch diameter viewing section. The initial testing of the wind tunnel involved running sectional profiles through the observation port of air currents of 0.1 to 3.0 atmosphere. The velocity profile was very uniform throughout the cross section of the experimental port, with the exception of the wall effects. The deposition of cooled volatiles using the wind tunnel was not performed. However, measurements of the deposition of H2O ice on a cryogenically cooled thickness modulator were made under ambient conditions, namely room temperature and pressure. In the Frost Depositon Test Facility, ice deposition was measured at thicknesses of about a half millimeter and frost was produced whose thickness reflectivity could easily be measured by reflectance spectroscopy.

Method for fabrication of high temperature superconductors

DOEpatents

Balachandran, Uthamalingam; Ma, Beihai; Miller, Dean

2006-03-14

A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y₂O₃ and then a layer of CeO₂ is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO₂ layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10.degree. to about 40.degree. and YBCO superconductors are used.

Method for fabrication of high temperature superconductors

DOEpatents

Balachandran, Uthamalingam [Hinsdale, IL; Ma, Beihai [Naperville, IL; Miller, Dean [Darien, IL

2009-07-14

A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y.sub.2O.sub.3 and then a layer of CeO.sub.2 is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO.sub.2 layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10.degree. to about 40.degree. and YBCO superconductors are used.

Organic ferroelectric evaporator with substrate cooling and in situ transport capabilities.

PubMed

Foreman, K; Labedz, C; Shearer, M; Adenwalla, S

2014-04-01

We report on the design, operation, and performance of a thermal evaporation chamber capable of evaporating organic thin films. Organic thin films are employed in a diverse range of devices and can provide insight into fundamental physical phenomena. However, growing organic thin films is often challenging and requires very specific deposition parameters. The chamber presented here is capable of cooling sample substrates to temperatures below 130 K and allows for the detachment of the sample from the cooling stage and in situ transport. This permits the use of multiple deposition techniques in separate, but connected, deposition chambers without breaking vacuum and therefore provides clean, well characterized interfaces between the organic thin film and any adjoining layers. We also demonstrate a successful thin film deposition of an organic material with a demanding set of deposition parameters, showcasing the success of this design.

RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition

NASA Astrophysics Data System (ADS)

Chopade, S. S.; Barve, S. A.; Thulasi Raman, K. H.; Chand, N.; Deo, M. N.; Biswas, A.; Rai, Sanjay; Lodha, G. S.; Rao, G. M.; Patil, D. S.

2013-11-01

Yttrium oxide (Y2O3) thin films have been deposited by radio frequency plasma assisted metal organic chemical vapor deposition (MOCVD) process using (2,2,6,6-tetramethyl-3,5-heptanedionate) yttrium (commonly known as Y(thd)3) precursor in a plasma of argon and oxygen gases at a substrate temperature of 350 °C. The films have been deposited under influence of varying RF self-bias (-50 V to -175 V) on silicon, quartz, stainless steel and tantalum substrates. The deposited coatings are characterized by glancing angle X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and scanning electron microscopy (SEM). GIXRD and FTIR results indicate deposition of Y2O3 (BCC structure) in all cases. However, XPS results indicate nonstoichiometric cubic phase deposition on the surface of deposited films. The degree of nonstoichiometry varies with bias during deposition. Ellipsometry results indicate that the refractive index for the deposited films is varying from 1.70 to 1.83 that is typical for Y2O3. All films are transparent in the investigated wavelength range 300-1200 nm. SEM results indicate that the microstructure of the films is changing with applied bias. Results indicate that it is possible to deposit single phase cubic Y2O3 thin films at low substrate temperature by RF plasma MOCVD process. RF self-bias that decides about the energy of impinging ions on the substrates plays an important role in controlling the texture of deposited Y2O3 films on the substrates. Results indicate that to control the structure of films and its texture, it is important to control the bias on the substrate during deposition. The films deposited at high bias level show degradation in the crystallinity and reduction of thickness.

The role of place-exchange, dislocations and substrate symmetry in nickel/gold(111) heteroepitaxy

NASA Astrophysics Data System (ADS)

Cullen, William Grady

1999-12-01

The epitaxial growth of Ni on Au(111) in ultrahigh vacuum was investigated using scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). Films in the coverage range 0--2 monolayers were studied. The goals were to investigate the influence of the substrate reconstruction on the morphology of the growing film and also the possibility of intermixing between Ni and Au. Deposition of Ni at room temperature led to the growth of two-dimensional islands which nucleate at the point dislocations of the Au(111) herringbone reconstruction, as found in previous studies. Anisotropic growth features were identified and shown to result from basic symmetry properties of the Au(111) reconstruction. In addition, significant internal structure was observed within the islands, indicating that the islands are of mixed composition, and that the overlayer is not pseudomorphic. Two-dimensional island ripening was observed after deposition of Ni at room temperature, followed by moderate annealing. Results of STM and AES experiments indicate that the mass transport during ripening is due to mobile Au atoms which have detached from the original islands. Deposition at high temperature was shown to result in the formation of large epitaxial Au islands due to Ni-Au place exchange and subsequent collision-mediated nucleation of Au atoms. Island size distributions were analyzed for comparison with scaling theories, and data collapse onto a common curve was observed at different coverages and temperatures. Based on the scaling analysis, a critical nucleus of i = 2 was inferred. The annealing and high-temperature deposition experiments demonstrated that a Ni monolayer is metastable at the Au(111) surface, i.e. Au tends to segregate and cover the Ni.

Low-temperature atomic layer deposition of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils.

PubMed

Putkonen, Matti; Sippola, Perttu; Svärd, Laura; Sajavaara, Timo; Vartiainen, Jari; Buchanan, Iain; Forsström, Ulla; Simell, Pekka; Tammelin, Tekla

2018-02-13

In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO 2 using AP-LTO® 330 and ozone (O 3 ) as precursors, and demonstrated its suitability to surface-modify temperature-sensitive bio-based films of cellulose nanofibrils (CNFs). The lowest temperature for the thermal ALD process was 80°C when the silicon precursor residence time was increased by the stop-flow mode. The SiO 2 film deposition rate was dependent on the temperature varying within 1.5-2.2 Å cycle -1 in the temperature range of 80-350°C, respectively. The low-temperature SiO 2 process that resulted was combined with the conventional trimethyl aluminium + H 2 O process in order to prepare thin multilayer nanolaminates on self-standing CNF films. One to six stacks of SiO 2 /Al 2 O 3 were deposited on the CNF films, with individual layer thicknesses of 3.7 nm and 2.6 nm, respectively, combined with a 5 nm protective SiO 2 layer as the top layer. The performance of the multilayer hybrid nanolaminate structures was evaluated with respect to the oxygen and water vapour transmission rates. Six stacks of SiO 2 /Al 2 O with a total thickness of approximately 35 nm efficiently prevented oxygen and water molecules from interacting with the CNF film. The oxygen transmission rates analysed at 80% RH decreased from the value for plain CNF film of 130 ml m -2  d -1 to 0.15 ml m -2  d -1 , whereas the water transmission rates lowered from 630 ± 50 g m -2  d -1 down to 90 ± 40 g m -2  d -1 This article is part of a discussion meeting issue 'New horizons for cellulose nanotechnology'. © 2017 The Author(s).

Low-temperature atomic layer deposition of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils

NASA Astrophysics Data System (ADS)

Putkonen, Matti; Sippola, Perttu; Svärd, Laura; Sajavaara, Timo; Vartiainen, Jari; Buchanan, Iain; Forsström, Ulla; Simell, Pekka; Tammelin, Tekla

2017-12-01

In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO2 using AP-LTO® 330 and ozone (O3) as precursors, and demonstrated its suitability to surface-modify temperature-sensitive bio-based films of cellulose nanofibrils (CNFs). The lowest temperature for the thermal ALD process was 80°C when the silicon precursor residence time was increased by the stop-flow mode. The SiO2 film deposition rate was dependent on the temperature varying within 1.5-2.2 Å cycle-1 in the temperature range of 80-350°C, respectively. The low-temperature SiO2 process that resulted was combined with the conventional trimethyl aluminium + H2O process in order to prepare thin multilayer nanolaminates on self-standing CNF films. One to six stacks of SiO2/Al2O3 were deposited on the CNF films, with individual layer thicknesses of 3.7 nm and 2.6 nm, respectively, combined with a 5 nm protective SiO2 layer as the top layer. The performance of the multilayer hybrid nanolaminate structures was evaluated with respect to the oxygen and water vapour transmission rates. Six stacks of SiO2/Al2O with a total thickness of approximately 35 nm efficiently prevented oxygen and water molecules from interacting with the CNF film. The oxygen transmission rates analysed at 80% RH decreased from the value for plain CNF film of 130 ml m-2 d-1 to 0.15 ml m-2 d-1, whereas the water transmission rates lowered from 630 ± 50 g m-2 d-1 down to 90 ± 40 g m-2 d-1. This article is part of a discussion meeting issue `New horizons for cellulose nanotechnology'.

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ya-Chao, Zhang; Xiao-Wei, Zhou; Sheng-Rui, Xu; Da-Zheng, Chen; Zhi-Zhe, Wang; Xing, Wang; Jin-Feng, Zhang; Jin-Cheng, Zhang; Yue, Hao

2016-01-01

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 1013 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm2/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61306017, 61334002, 61474086, and 11435010) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61306017).

Intrinsic and spatially nonuniform ferromagnetism in Co-doped ZnO films

NASA Astrophysics Data System (ADS)

Tseng, L. T.; Suter, A.; Wang, Y. R.; Xiang, F. X.; Bian, P.; Ding, X.; Tseng, A.; Hu, H. L.; Fan, H. M.; Zheng, R. K.; Wang, X. L.; Salman, Z.; Prokscha, T.; Suzuki, K.; Liu, R.; Li, S.; Morenzoni, E.; Yi, J. B.

2017-09-01

Co doped ZnO films have been deposited by a laser-molecular beam epitaxy system. X-ray diffraction and UV spectra analysis show that Co effectively substitutes the Zn site. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy analysis indicate that there are no clusters. Co dopants are uniformly distributed in ZnO film. Ferromagnetic ordering is observed in all samples deposited under an oxygen partial pressure, PO2=10-3 , 10-5, and 10-7 torr, respectively. However, the magnetization of PO2=10-3 and 10-5 is very small at room temperature. At low temperature, the ferromagnetic ordering is enhanced. Muon spin relaxation (μ SR ) measurements confirm the ferromagnetism in all samples, and the results are consistent with magnetization measurements. From μ SR and TEM analysis, the film deposited under PO2=10-7 torr shows intrinsic ferromagnetism. However, the volume fraction of the ferromagnetism phase is approximately 70%, suggesting that the ferromagnetism is not carrier mediated. Resistivity versus temperature measurements indicate Efros variable range hopping dominates the conductivity. From the above results, we can confirm that a bound magnetic polaron is the origin of the ferromagnetism.

Method for rapid, controllable growth and thickness, of epitaxial silicon films

DOEpatents

Wang, Qi [Littleton, CO; Stradins, Paul [Golden, CO; Teplin, Charles [Boulder, CO; Branz, Howard M [Boulder, CO

2009-10-13

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

Heterogeneous decomposition of silane in a fixed bed reactor

NASA Technical Reports Server (NTRS)

Iya, S. K.; Flagella, R. N.; Dipaolo, F. S.

1982-01-01

Heterogeneous decomposition of silane in a fluidized bed offers an attractive route for the low-cost production of silicon for photovoltaic application. To obtain design data for a fluid bed silane pyrolysis reactor, deposition experiments were conducted in a small-scale fixed bed apparatus. Data on the decomposition mode, plating rate, and deposition morphology were obtained in the temperature range 600-900 C. Conditions favorable for heterogeneous decomposition with good deposition morphology were identified. The kinetic rate data showed the reaction to be first order with an activation energy of 38.8 kcal/mol, which agrees well with work done by others. The results are promising for the development of an economically attractive fluid bed process.

Study of nanostructure and ethanol vapor sensing performance of WO3 thin films deposited by e-beam evaporation method under different deposition angles: application in breath analysis devices

NASA Astrophysics Data System (ADS)

Amani, E.; Khojier, K.; Zoriasatain, S.

2018-01-01

This paper studies the effect of deposition angle on the crystallographic structure, surface morphology, porosity and subsequently ethanol vapor sensing performance of e-beam-evaporated WO3 thin films. The WO3 thin films were deposited by e-beam evaporation technique on SiO2/Si substrates under different deposition angles (0°, 30°, and 60°) and then post-annealed at 500 °C with a flow of oxygen for 4 h. Crystallographic structure and surface morphology of the samples were checked using X-ray diffraction method and atomic force microscopy, respectively. Physical adsorption isotherm was also used to measure the porosity and effective surface area of the samples. The electrical response of the samples was studied to different concentrations of ethanol vapor (10-50 ppm) at the temperature range of 140-260 °C and relative humidity of 80%. The results reveal that the WO3 thin film deposited under 30° angle shows more sensitivity to ethanol vapor than the other samples prepared in this work due to the more crystallinity, porosity, and effective surface area. The investigations also show that the sample deposited at 30° can be a good candidate as a breath analysis device at the operating temperature of 240 °C because of its high response, low detection limit, and reliability at high relative humidity.

Transforming a Simple Commercial Glue into Highly Robust Superhydrophobic Surfaces via Aerosol-Assisted Chemical Vapor Deposition.

PubMed

Zhuang, Aoyun; Liao, Ruijin; Lu, Yao; Dixon, Sebastian C; Jiamprasertboon, Arreerat; Chen, Faze; Sathasivam, Sanjayan; Parkin, Ivan P; Carmalt, Claire J

2017-12-06

Robust superhydrophobic surfaces were synthesized as composites of the widely commercially available adhesives epoxy resin (EP) and polydimethylsiloxane (PDMS). The EP layer provided a strongly adhered micro/nanoscale structure on the substrates, while the PDMS was used as a post-treatment to lower the surface energy. In this study, the depositions of EP films were taken at a range of temperatures, deposition times, and substrates via aerosol-assisted chemical vapor deposition (AACVD). A novel dynamic deposition temperature approach was developed to create multiple-layered periodic micro/nanostructures that significantly improved the surface mechanical durability. Water droplet contact angles (CA) of 160° were observed with droplet sliding angles (SA) frequently <1°. A rigorous sandpaper abrasion test demonstrated retention of superhydrophobic properties and superior robustness therein, while wear, anticorrosion (pH = 1-14, 72 h), and UV testing (365 nm, 3.7 mW/cm 2 , 120 h) were carried out to exhibit the environmental stability of the films. Self-cleaning behavior was demonstrated in clearing the surfaces of various contaminating powders and aqueous dyes. This facile and flexible method for fabricating highly durable superhydrophobic polymer films points to a promising future for AACVD in their scalable and low-cost production.

Room Temperature Sensing Achieved by GaAs Nanowires and oCVD Polymer Coating.

PubMed

Wang, Xiaoxue; Ermez, Sema; Goktas, Hilal; Gradečak, Silvija; Gleason, Karen

2017-06-01

Novel structures comprised of GaAs nanowire arrays conformally coated with conducting polymers (poly(3,4-ethylenedioxythiophene) (PEDOT) or poly(3,4-ethylenedioxythiophene-co-3-thiophene acetic acid) display both sensitivity and selectivity to a variety of volatile organic chemicals. A key feature is room temperature operation, so that neither a heater nor the power it would consume, is required. It is a distinct difference from traditional metal oxide sensors, which typically require elevated operational temperature. The GaAs nanowires are prepared directly via self-seeded metal-organic chemical deposition, and conducting polymers are deposited on GaAs nanowires using oxidative chemical vapor deposition (oCVD). The range of thickness for the oCVD layer is between 100 and 200 nm, which is controlled by changing the deposition time. X-ray diffraction analysis indicates an edge-on alignment of the crystalline structure of the PEDOT coating layer on GaAs nanowires. In addition, the positive correlation between the improvement of sensitivity and the increasing nanowire density is demonstrated. Furthermore, the effect of different oCVD coating materials is studied. The sensing mechanism is also discussed with studies considering both nanowire density and polymer types. Overall, the novel structure exhibits good sensitivity and selectivity in gas sensing, and provides a promising platform for future sensor design. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Results of Buoyancy-gravity Effects in ITER Cable-in- Conduit Conductor with Dual Channel

NASA Astrophysics Data System (ADS)

Bruzzone, P.; Stepanov, B.; Zanino, R.; Richard, L. Savoldi

2006-04-01

The coolant in the ITER cable-in-conduit conductors (CICC) flows at significant higher speed in the central channel than in the strand bundle region due to the large difference of hydraulic impedance. When energy is deposited in the bundle region, e.g. by ac loss or radiation, the heat removal in vertically oriented dual channel CICC with the coolant flowing downward is affected by the reduced density of helium (buoyancy) in the bundle region, which is arising from the temperature gradient due to poor heat exchange between the two channels. At large deposited power, flow stagnation and back-flow can cause in the strand bundle area a slow temperature runaway eventually leading to quench. A new test campaign of the thermal-hydraulic behavior was carried out in the SULTAN facility on an instrumented section of the ITER Poloidal Field Conductor Insert (PFIS). The buoyancy-gravity effect was investigated using ac loss heating, with ac loss in the cable calibrated in separate runs. The extent of upstream temperature increase was explored over a broad range of mass flow rate and deposited power. The experimental behavior is partly reproduced by numerical simulations. The results from the tests are extrapolated to the likely operating conditions of the ITER Toroidal Field conductor with the inboard leg cooled from top to bottom and heat deposited by nuclear radiation from the burning plasma.

Ion beam sputter deposited zinc telluride films

NASA Technical Reports Server (NTRS)

Gulino, D. A.

1985-01-01

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Theoretical and experimental studies of the deposition of Na2So4 from seeded combustion gases

NASA Technical Reports Server (NTRS)

Kohl, F. J.; Santoro, G. J.; Stearns, C. A.; Fryburg, G. C.; Rosner, D. E.

1977-01-01

Flames in a Mach 0.3 atmospheric pressure laboratory burner rig were doped with sea salt, NaS04, and NaCl, respectively, in an effort to validate theoretical dew point predictions made by a local thermochemical equilibrium (LTCE) method of predicting condensation temperatures of sodium sulfate in flame environments. Deposits were collected on cylindrical platinum targets placed in the combustion products, and the deposition was studied as a function of collector temperature. Experimental deposition onset temperatures checked within experimental error with LTCE-predicted temperatures. A multicomponent mass transfer equation was developed to predict the rate of deposition of Na2SO4(c) via vapor transport at temperatures below the deposition onset temperature. Agreement between maximum deposition rates predicted by this chemically frozen boundary layer (CFBL) theory and those obtained in the seeded laboratory burner experiments is good.

Structural and Electrical Characterization of SiO2 Gate Dielectrics Deposited from Solutions at Moderate Temperatures in Air.

PubMed

Esro, Mazran; Kolosov, Oleg; Jones, Peter J; Milne, William I; Adamopoulos, George

2017-01-11

Silicon dioxide (SiO 2 ) is the most widely used dielectric for electronic applications. It is usually produced by thermal oxidation of silicon or by using a wide range of vacuum-based techniques. By default, the growth of SiO 2 by thermal oxidation of silicon requires the use of Si substrates whereas the other deposition techniques either produce low quality or poor interface material and mostly require high deposition or annealing temperatures. Recent investigations therefore have focused on the development of alternative deposition paradigms based on solutions. Here, we report the deposition of SiO 2 thin film dielectrics deposited by spray pyrolysis in air at moderate temperatures of ≈350 °C from pentane-2,4-dione solutions of SiCl 4 . SiO 2 dielectrics were investigated by means of UV-vis absorption spectroscopy, spectroscopic ellipsometry, XPS, XRD, UFM/AFM, admittance spectroscopy, and field-effect measurements. Data analysis reveals smooth (R RMS < 1 nm) amorphous films with a dielectric constant of about 3.8, an optical band gap of ≈8.1 eV, leakage current densities in the order of ≈10 -7 A/cm 2 at 1 MV/cm, and high dielectric strength in excess of 5 MV/cm. XPS measurements confirm the SiO 2 stoichiometry and FTIR spectra reveal features related to SiO 2 only. Thin film transistors implementing spray-coated SiO 2 gate dielectrics and C 60 and pentacene semiconducting channels exhibit excellent transport characteristics, i.e., negligible hysteresis, low leakage currents, high on/off current modulation ratio on the order of 10 6 , and high carrier mobility.

Deposition temperature dependent optical and electrical properties of ALD HfO{sub 2} gate dielectrics pretreated with tetrakisethylmethylamino hafnium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, J.; School of Sciences, Anhui University of Science and Technology, Huainan 232001; He, G., E-mail: hegang@ahu.edu.cn

2015-10-15

Highlights: • ALD-derived HfO{sub 2} gate dielectrics have been deposited on Si substrates. • The leakage current mechanism for different deposition temperature was discussed. • Different emission at different field region has been determined precisely. - Abstract: The effect of deposition temperature on the growth rate, band gap energy and electrical properties of HfO{sub 2} thin film deposited by atomic layer deposition (ALD) has been investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the growth rate and optical constant of ALD-derived HfO{sub 2} gate dielectrics are determined precisely. The deposition temperature dependent electrical properties of HfO{sub 2}more » films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. The leakage current mechanism for different deposition temperature has been discussed systematically. As a result, the optimized deposition temperature has been obtained to achieve HfO{sub 2} thin film with high quality.« less

Chemical vapor deposition techniques and related methods for manufacturing microminiature thermionic converters

DOEpatents

King, Donald B.; Sadwick, Laurence P.; Wernsman, Bernard R.

2002-06-25

Methods of manufacturing microminiature thermionic converters (MTCs) having high energy-conversion efficiencies and variable operating temperatures using MEMS manufacturing techniques including chemical vapor deposition. The MTCs made using the methods of the invention incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs also exhibit maximum efficiencies of just under 30%, and thousands of the devices can be fabricated at modest costs.

Effect of temperature for synthesizing single-walled carbon nanotubes by catalytic chemical vapor deposition over Mo-Co-MgO catalyst

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niu Zhiqiang; Fang Yan

2008-06-03

The influence of temperature on synthesizing single-walled carbon nanotubes (SWCNTs) by catalytic chemical vapor deposition of methane over Mo-Co-MgO catalyst was studied by Transmission Electron Microscope (TEM) and Raman scattering. The Mo-Co-MgO bimetallic catalyst was prepared by decomposing the mixture of magnesium nitrate, ammonium molybdate, citric acid, and cobalt nitrate. The results show that Mo-Co-MgO bimetallic catalyst is effective to synthesize SWCNTs. By using Mo-Co-MgO bimetallic catalyst, generation of SWCNTs even at 940 K was demonstrated. The optimum temperature of synthesizing SWCNTs over Mo-Co-MgO bimetallic catalyst may be about 1123 K. At 1123 K, the diameters of SWCNTs are inmore » the range of 0.75-1.65 nm. The content of SWCNTs is increased with the increase of temperature below 1123 K and the carbon yield rate is also increased with the increase of synthesis temperature. Therefore, the amount of SWCNTs increases with the increase of temperature below 1123 K. However, above 1123 K, the content of SWCNTs is decreased with the increase of temperature; therefore, it is not effective to increase the amount of SWCNTs through increasing synthesis temperature above 1123 K.« less

Fluid inclusion studies on the mineralized quartz-rich hydrothermal breccias and quartz veins of the Kay Tanda epithermal gold deposit, Lobo, Batangas, Philippines

NASA Astrophysics Data System (ADS)

Frias, S. M. P.; Takahashi, R.; Imai, A.; Blamey, N.

2017-12-01

The Kay Tanda epithermal deposit in Lobo, Batangas, Philippines is mainly hosted in quartz-rich hydrothermal breccia and quartz veins. These contain varying gold grades with some reaching bonanza gold grades as high as 200 ppm Au. They also contain varying amounts of base metal sulfides such as sphalerite, galena, chalcopyrite and pyrite whose abundances increase with depth. Petrographic analysis of the samples revealed different quartz textures such as colloform textures in quartz veins at shallow levels and feathery, flamboyant and mosaic textures in the matrix of hydrothermal breccias at deeper levels. These textures are indicative of boiling conditions. To elucidate the fluid conditions, fluid source, composition and processes during the formation of the deposit, fluid inclusion microthermometry, quantitative fluid inclusion gas analysis and laser Raman spectroscopy were conducted. Doubly polished thin wafers prepared from the quartz veins and quartz crystals in the matrix of hydrothermal breccias. Microthermometric analysis of primary fluid inclusions included measurements of the freezing temperature Tf, the temperature of ice melting Tm, and the homogenization temperature of the fluid phase by disappearance of vapor Th. Liquid-to-vapor (L-V) ratios are variable, thus, liquid-rich liquid-vapor inclusions and vapor-rich liquid-vapor inclusions coexist in some samples. The sizes of the primary fluid inclusions may reach 100 micrometers. The homogenization temperatures range 200 °C to 380 °C, with the mode around 250 °C to 280 °C. Salinities range from 2 to 7 wt% NaCl equivalent, with the mode around 4 to 5 wt% NaCl equivalent. Trends of the distribution of fluid inclusion populations based on their homogenization temperature and salinity suggest boiling which is consistent with the variable liquid to vapor ratios, i.e. coexistence of liquid-rich inclusions and vapor-rich inclusions.

The processes of formation and epitaxial alignment of SrTiO3 thin films prepared by metallo-organic decomposition

NASA Astrophysics Data System (ADS)

Braunstein, G.; Paz-Pujalt, G. R.; Mason, M. G.; Blanton, T.; Barnes, C. L.; Margevich, D.

1993-01-01

The processes of formation and crystallization of thin films of SrTiO3 prepared by the method of metallo-organic decomposition have been studied with particular emphasis on the relationship between the thermal decomposition of the metallo-organic precursors and the eventual epitaxial alignment of the crystallized films. The films are deposited by spin coating onto single-crystalline silicon and SrTiO3 substrates, pyrolyzed on a hot plate at temperatures ranging from 200 to 450 °C, and subsequently heat treated in a quartz tube furnace at temperatures ranging from 300 to 1200 °C. Heat treatment at temperatures up to 450-500 °C results in the evaporation of solvents and other organic addenda, thermal decomposition of the metallo-organic (primarily metal-carboxylates) precursors, and formation of a carbonate species. This carbonate appears to be an intermediate phase in the reaction of SrCO3 and TiO2 to form SrTiO3. Relevant to this work is the fact that the carbonate species exhibits diffraction lines, indicating the formation of grains that can serve as seeds for the nucleation and growth of randomly oriented SrTiO3 crystallites, thereby leading to a polycrystalline film. Deposition on silicon substrates indeed results in the formation of polycrystalline SrTiO3. However, when the precursor solution is deposited on single-crystalline SrTiO3 substrates, the crystallization process involves a competition between two mechanisms: the random nucleation and growth of crystallites just described, and layer-by-layer solid phase epitaxy. Epitaxial alignment on SrTiO3 substrates can be achieved when the samples are heat treated at temperatures of 1100-1200 °C or at temperatures as low as 600-650 °C when the substrate is heated to about 1100 °C before spin coating.

Epitaxial Growth and Cracking Mechanisms of Thermally Sprayed Ceramic Splats

NASA Astrophysics Data System (ADS)

Chen, Lin; Yang, Guan-jun

2018-02-01

In the present study, the epitaxial growth and cracking mechanisms of thermally sprayed ceramic splats were explored. We report, for the first time, the epitaxial growth of various splat/substrate combinations at low substrate temperatures (100 °C) and large lattice mismatch (- 11.26%). Our results suggest that thermal spray deposition was essentially a liquid-phase epitaxy, readily forming chemical bonding. The interface temperature was also estimated. The results convincingly demonstrated that atoms only need to diffuse and rearrange over a sufficiently short range during extremely rapid solidification. Concurrently, severe cracking occurred in the epitaxial splat/substrate systems, which indicated high tensile stress was produced during splat deposition. The origin of the tensile stress was attributed to the strong constraint of the locally heated substrate by its cold surroundings.

Amorphous metallizations for high-temperature semiconductor device applications

NASA Technical Reports Server (NTRS)

Wiley, J. D.; Perepezko, J. H.; Nordman, J. E.; Kang-Jin, G.

1981-01-01

The initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C.

Systematic variations in sinter mineralogy, microtexture and diagenesis in modern siliceous hot springs: Clues for interpreting depositional conditions in ancient deposits

NASA Astrophysics Data System (ADS)

Mills, V. W.; Farmer, J. D.; Ruff, S. W.; Nunez, J.; Jahnke, L. L.

2011-12-01

The deposits of siliceous hydrothermal springs are known to capture and preserve a wide range of microbial fossil information. The recent discovery of hydrothermal silica at Home Plate, Columbia Hills, Mars has once again raised interest in the potential importance of ancient spring sinters as targets for future astrobiological mission to Mars. To create additional context information to support future in situ missions to Mars, we have documented systematic changes in the mineralogy and microtexture of modern siliceous hot spring deposits, observed along gradients in temperature, pH and flow velocity. Specific objectives are to: 1) identify chemical and physical factors that promote early diagenetic transformations of amorphous silica (opal-A), to progressively more ordered and crystalline phases (cristobalite, tridymite and quartz); 2) determine the composition and abundance of minor mineral phases, especially clays, in relationship to pH, temperature and paragenesis; and 3) to assess the usefulness of sinter mineralogy and microtexture in reconstructing the paleoenvironmental records preserved in ancient deposits. Study sites for acidic (pH 2-5) sinters included Nymph Creek, located in the Norris Geyser Basin of Yellowstone National Park (YNP). Active alkaline (pH 7-10) springs included Rabbit Creek, Steep Cone and Mound Spring located in the Lower Geyser Basin, YNP. Field measurements in active springs included pH, temperature and flow velocity, along with general microfacies assignments. To better constrain types and rates of silica diagenesis, the study also sampled older (Holocene-Pleistocene-aged) deposits. Laboratory analyses included X-ray powder diffraction (XRPD), thermal infrared spectroscopy (TIR) and thin section petrography for characterizing sinter microtextures and for placing mineral phases (identified by XRPD and TIR) into a time-ordered diagenetic framework. In analyzing the phyllosilicates present in sinters, we applied clay separation and glycolization methods, with XRPD. Results indicate that all of the acidic sinters we studied showed more extensive early diagenetic ordering of silica phases (opal-A to cristobalite and quartz) than the comparable microfacies of alkaline-neutral sinters. Clay analyses showed no evidence for smectitic (expansive) clays, but kaolin family clays (dickite, kaolinite and halloysite) were present in both acidic and alkaline sinters. The microfacies distribution observed for clays suggests: 1) dickite being more abundant in higher temperature (near-vent) microfacies, 2) kaolinite dominating mid-temperature outflow channels, slope and upper distal apron microfacies, and 3) halloysite being restricted to lower distal apron-marsh microfacies transitions. Future work will expand clay analyses to apply near-IR spectroscopy to a broader range of samples to assess the consistency with patterns suggested from XRPD.

Polyaniline-based optical ammonia detector

DOEpatents

Duan, Yixiang; Jin, Zhe; Su, Yongxuan

2002-01-01

Electronic absorption spectroscopy of a polyaniline film deposited on a polyethylene surface by chemical oxidation of aniline monomer at room temperature was used to quantitatively detect ammonia gas. The present optical ammonia gas detector was found to have a response time of less than 15 s, a regeneration time of less than 2 min. at room temperature, and a detection limit of 1 ppm (v/v) for ammonia, with a linear dynamic range from 180 ppm to 18,000 ppm.

Requirements, Technology and Configuration Evaluation for Crash Survivable Flight Data Recording (CSFDR) System

DTIC Science & Technology

1981-03-23

25% Rotational angle - 350 degrees Temperature range - -65°C to + 125°C Vibration - 15 g Shock - 50 g Rotational load life - 25,000,000...structed of multi-layered metal foils, vacuum deposited on thin films of Mylar, Kapton, or similar plastics) slowly outgas and contaminate their own...armor. Intumescent coating is a paint derivative, which swells 5 to 50 times its original thickness when exposed to high temperatures ( 350 ° to 500

Metal silicides with energetic pulses

NASA Astrophysics Data System (ADS)

D'Anna, E.; Leggieri, G.; Luches, A.; Majni, G.; Nava, F.; Ottaviani, G.

1986-07-01

Samples formed of a thin metal film deposited on silicon single crystal were annealed with electron and laser (ruby and excimer) pulses over a wide range of fluences. From a comparison of the experimental results with the temperature profiles of the irradiated samples, it turns out that suicide formation starts when the metal/silicon interface reaches the lowest eutectic temperature of the binary metal/silicon system. The growth rate of reacted layers is of the order of 1 m/s.

Airborne particle emission of a commercial 3D printer: the effect of filament material and printing temperature.

PubMed

Stabile, L; Scungio, M; Buonanno, G; Arpino, F; Ficco, G

2017-03-01

The knowledge of exposure to the airborne particle emitted from three-dimensional (3D) printing activities is becoming a crucial issue due to the relevant spreading of such devices in recent years. To this end, a low-cost desktop 3D printer based on fused deposition modeling (FDM) principle was used. Particle number, alveolar-deposited surface area, and mass concentrations were measured continuously during printing processes to evaluate particle emission rates (ERs) and factors. Particle number distribution measurements were also performed to characterize the size of the emitted particles. Ten different materials and different extrusion temperatures were considered in the survey. Results showed that all the investigated materials emit particles in the ultrafine range (with a mode in the 10-30-nm range), whereas no emission of super-micron particles was detected for all the materials under investigation. The emission was affected strongly by the extrusion temperature. In fact, the ERs increase as the extrusion temperature increases. Emission rates up to 1×10 12  particles min -1 were calculated. Such high ERs were estimated to cause large alveolar surface area dose in workers when 3D activities run. In fact, a 40-min-long 3D printing was found to cause doses up to 200 mm 2 . © 2016 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

NASA Astrophysics Data System (ADS)

Winkowski, P.; Marszałek, Konstanty W.

2013-07-01

Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

Effects of substrate heating and vacuum annealing on optical and electrical properties of alumina-doped ZnO films deposited by DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Tang, Chien-Jen; Wang, Chun-Yuan; Jaing, Cheng-Chung

2011-10-01

Alumina-doped zinc oxide (AZO) films have wide range of applications in optical and optoelectronic devices. AZO films have advantage in high transparency, high stability to hydrogen plasma and low cost to alternative ITO film. AZO film was prepared by direct-current (DC) magnetron sputtering from ceramic ZnO:Al2O3 target. The AZO films were compared in two different conditions. The first is substrate heating process, in which AZO film was deposited by different substrate temperature, room temperature, 150 °C and 250 °C. The second is vacuum annealing process, in which AZO film with deposited at room temperature have been annealed at 250 °C and 450 °C in vacuum. The optical properties, electrical properties, grain size and surface structure properties of the films were studied by UV-VIS-NIR spectrophotometer, Hall effect measurement equipment, x-ray diffraction, and scanning electron microscopy. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 1.92×10-3 Ω-cm, 6.38 cm2/Vs, 5.08×1020 #/cm3, and 31.48 nm respectively, in vacuum annealing of 450 °C. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 8.72×10-4 Ω-cm, 6.32 cm2/Vs, 1.13×1021 #/cm3, and 31.56 nm, respectively, when substrate temperature was at 250 °C. Substrate heating process is better than vacuum annealed process for AZO film deposited by DC Magnetron Sputtering.

Influence of deposition conditions on the nature of epitaxial SrIrO3 on STO (001)

NASA Astrophysics Data System (ADS)

Bhat, Shwetha G.; Sebastian, Nirmal K.; Kumar, P. S. Anil

2018-05-01

SrIrO3 (SIO) is one of the materials known to exhibit a high spin-orbit coupling with correlated semi-metallic ground state, along with the topological states, as proven in recent times. In this regard, the SIO thin films grown by us on SrTiO3 (001) at certain deposition conditions, exhibit a low temperature magneto-transport behavior which is analogous to the materials with topological states. Further, we have explored various deposition conditions of SIO such as partial pressure of O2 and different temperatures of growth for different thickness of SIO. In addition, from the electrical transport properties, SIO thin films found to exhibit semi-metallic nature with either insulating-like or a crossover from metal-like to insulating-like behavior based on the conditions chosen for the growth. Moreover, the magneto-transport data of various SIO thin films are found to be obeying the usual B2 (Lorentzian) behavior in majority of the cases. At the same time, we have also observed the weak-localization and weak-antilocalization effects; along with a linear magneto-resistance at low temperature ranges. Thus, from our extensive measurements, it becomes clear that SIO thin films can exhibit wide varieties of magneto-transport properties based on the deposition conditions. Plethora of interesting properties exhibited by the highly spin-orbit coupled SIO epitaxial thin films at lower temperatures in the presence of magnetic field makes the material to be promising for the future applications in the field of spintronics.

Defect Generation for a Hydrated Layer and Thermal Stability Based on Ba0.7Sr0.3TiO3/SiO2 as H+ Sensitive Layer in Ion-Sensitive Field-Effect Transistor Devices

NASA Astrophysics Data System (ADS)

Chen, Chun-Yuan; Chou, Jung-Chuan; Chou, Hsueh-Tao

2009-04-01

In this paper, we present a novel sensitive ion-sensitive field-effect transistor (ISFET) membrane based on Ba0.7Sr0.3TiO3 (BST)/SiO2 fabricated by sputtering deposition. The proposed device exhibits a linear shift in acidic solutions in the pH range from 1 to 10. The device sensitivity was about 50-55 mV/pH for different deposition times. We also examined the trapping behavior of the surface hydrated layer using the metal-insulator-semiconductor (MIS) structure. Results show that the hydration layer gives rise to stress polarity dependence of electron injection when immersed in pH buffer solutions. Injection from the gate electrode produces larger positive charges and interface state densities in contrast to the substrate injection, which causes simultaneous positive and negative charge trapping. A physical model that quantitatively describes the asymmetry associated with the hydrated diffusion layer is presented, and the temperature effects of BST/SiO2 ISFET devices in the range from 25 to 65 °C were examined. We observed that pH sensitivity increases with increasing temperature. The temperature coefficient of sensitivity (TCS) can be divided into two different ranges: 0.08 mV/pH °C between 25 and 45 °C, and 0.57 mV/pH °C between 45 and 65 °C. A better thermal stability is produced in the 25 and 45 °C range in comparison with other sensitive layers.

High-efficiency thin-film GaAs solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.

1979-01-01

GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.

Nanostructuring and texturing of pulsed laser deposited hydroxyapatite thin films

NASA Astrophysics Data System (ADS)

Kim, Hyunbin; Catledge, Shane; Vohra, Yogesh; Camata, Renato; Lacefield, William

2003-03-01

Hydroxyapatite (HA) [Ca_10(PO_4)_6(OH)_2] is commonly deposited onto orthopedic and dental metallic implants to speed up bone formation around devices, allowing earlier stabilization in a patient. Pulsed laser deposition (PLD) is a suitable means of placing thin HA films on these implants because of its control over stoichiometry, crystallinity, and nanostructure. These characteristics determine the mechanical properties of the films that must be optimized to improve the performance of load-bearing implants and other devices that undergo bone insertion. We have used PLD to produce nanostructured and preferentially oriented HA films and evaluated their mechanical properties. Pure, highly crystalline HA films on Ti-6Al-4V substrates were obtained using a KrF excimer laser (248nm) with energy density of 4-8 J/cm^2 and deposition temperature of 500-700^rcC. Scanning electron and atomic force microscopies reveal that our careful manipulation of energy density and substrate temperature has led to films made up of HA grains in the nanometer scale. Broadening of x-ray diffraction peaks as a function of deposition temperature suggests it may be possible to control the film nanostructure to a great extent. X-ray diffraction also shows that as the laser energy density is increased in the 4-8 J/cm^2 range, the hexagonal HA films become preferentially oriented along the c-axis perpendicular to the substrate. Texture, nanostructure, and phase make-up all significantly influence the mechanical properties. We will discuss how each of these factors affects hardness and Young's modulus of the HA films as measured by nanoindentation.

Heteroepitaxial Cu 2O thin film solar cell on metallic substrates

DOE PAGES

Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; ...

2015-11-06

Heteroepitaxial, single-crystal-like Cu 2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu 2O films on low cost, flexible, textured metallic substrates. Cu 2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu 2O phase without any trace of CuO phase is only formed in a limited deposition window of P(Omore » 2) - temperature. The (00l) single-oriented, highly textured, Cu 2O films deposited under optimum P(O 2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40-60 cm 2 V -1 s -1 and carrier concentration over 10 16 cm -3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu 2O solar cell based on epitaxial Cu 2O film prepared on the textured metal substrate.« less

Heteroepitaxial Cu2O thin film solar cell on metallic substrates

PubMed Central

Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; Goyal, Amit

2015-01-01

Heteroepitaxial, single-crystal-like Cu2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu2O films on low cost, flexible, textured metallic substrates. Cu2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu2O phase without any trace of CuO phase is only formed in a limited deposition window of P(O2) - temperature. The (00l) single-oriented, highly textured, Cu2O films deposited under optimum P(O2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40–60 cm2 V−1 s−1 and carrier concentration over 1016 cm−3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu2O solar cell based on epitaxial Cu2O film prepared on the textured metal substrate. PMID:26541499

Clast morphologies and heating experiments constrain the thermal conditions during pyroclastic density current emplacement at Tungurahua volcano, Ecuador

NASA Astrophysics Data System (ADS)

Garman, K. A.; Swarr, G. J.; Dufek, J.; Harpp, K. S.; Geist, D.

2009-12-01

Clasts within pyroclastic density current deposits (PDCs) record information about the dynamic processes and thermal history of erosion, transportation, and deposition. The August 2006 eruption of Tungurahua produced PDCs with exceptional clast abundances and morphologies. This eruption was of the “boiling over” type, where the PDCs were not accompanied by a high column. Rather, they were fed by strong, low (less than 2 km), and persistent fountaining. Granulometric, clast morphology, and flow dimension data were obtained by detailed study of the four largest PDC deposits produced during this eruption. The individual flow units have ratios of height loss to travel distance (H/L) ranging from 0.38 to 0.51, which lie in the upper range of H/L ratios for pyroclastic density currents, generally typical of small-volume events. The flow deposits are characterized by oblate scoria bombs up to 1.78 m in diameter, and the bombs are best preserved in levees, flow snouts, and the upper parts of some deposits. The interiors of the deposits are all poorly sorted, with particles less than 8 mm in diameter ranging from 0.55 to 0.87 weight percent. Pyroclastic surges originated from PDCs at locations of abrupt topographic steepening and channel curvature. In both of these locations, we observed evidence of bedload deposition and enhanced mobility of surge material. Some of the bombs were solid at the time of their deposition, whereas others deformed plastically after deposition, which constrains their thermal history. Clast size controls the internal forces and thermal evolution of a clast, which are critical in determining its post-fragmentation plastic deformation. Heating experiments on slabs made from the bombs constrain the deformation of the clasts as a function of temperature and torque. We will discuss the thermal history of individual clasts, field observation of individual clast deformation, and the information they provide on the entrainment of the ambient atmosphere.

Effect of temperature on series resistance of organic/inorganic semiconductor junction diode

NASA Astrophysics Data System (ADS)

Tripathi, Udbhav; Kaur, Ramneek; Bharti, Shivani

2016-05-01

The paper reports the fabrication and characterization of CuPc/n-Si organic/inorganic semiconductor diode. Copper phthalocyanine, a p-type organic semiconductor layer has been deposited on Si substrate by thermal evaporation technique. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Temperature dependence of the schottky diode parameters has been studied and discussed in the temperature range, 303 K to 353 K. Series resistance of the diode has been determined using Cheung's function method. Series resistance decreases with increase in temperature. The large value of series resistance at low temperature has been explained on the basis of barrier inhomogeneities in the diode.

Age constraints on Jerritt Canyon and other Carlin-type gold deposits in the western United States-relationship to mid-Tertiary extension and magmatism

USGS Publications Warehouse

Hofstra, A.H.; Snee, L.W.; Rye, R.O.; Folger, H.W.; Phinisey, J.D.; Loranger, R.J.; Dahl, A.R.; Naeser, C.W.; Stein, H.J.; Lewchuk, M.

1999-01-01

Carlin-type gold deposits are difficult to date and a wide range of ages has been reported for individual deposits. Therefore, several methods were employed to constrain the age of the gold deposits in the Jerritt Canyon district. Dated igneous rocks with well-documented crosscutting relationships to ore provided the most reliable constraints. K/Ar and 40Ar/39Ar dates on igneous rocks are as follows: andesite dikes 324 Ma, sericitic alteration in andesite dikes 118 Ma, basalt dikes 40.8 Ma, quartz monzonite dikes 39.2 Ma, and calc-alkaline ignimbrites 43.1 to 40.1 Ma. Of these, only the andesite and basalt dikes are clearly altered and mineralized. The gold deposits are, therefore, younger than the 40.8 Ma basalt dikes. The sericitic alteration in the andesite dikes is unrelated to the gold deposits. A number of dating techniques did not work. K/Ar and 40Ar/39Ar dates on mica from mineralized Ordovician to Devonian sedimentary rocks gave misleading results. The youngest date of 149 Ma from the smallest <0.1-??m-size fraction shows that the temperature (120??-260??C) and duration (?) of hydrothermal activity was insufficient to reset preexisting fine-grained micas in the host rocks. The temperature and duration was also insufficient to anneal fission tracks in zircon from Ordovician quartzites as they yield Middle Proterozoic dates in both mineralized and barren samples. Apatites were too small for fission track dating. Hydrothermal sulfides have pronounced crustal osmium isotope signatures (187Os/188Os(initial) = 0.9-3.6) but did not yield a meaningful isochron due to very low Re and Os concentrations and large analytical uncertainties. Paleomagnetic dating techniques failed because the hydrothermal fluids sulfidized nearly all of the iron in the host rocks leaving no remnant magnetism. When published isotopic dates from other Carlin-type deposits in Nevada and Utah are subject to the rigorous evaluation developed for the Jerritt Canyon study, most deposits can be shown to have formed between 42 and 30 Ma. K/Ar and 40Ar/39Ar dates on the youngest preore igneous rocks range from 41 to 32 Ma, whereas the oldest postore igneous rocks range from 35 to 33 Ma. Hydrothermal adularia from the Twin Creeks deposit yields similar 40Ar/39Ar dates of 42 Ma. K/Ar dates on supergene alunite range from 4 to 30 Ma. K/Ar and 40Ar/39Ar dates on micas separated from sedimentary (395-43 Ma) and igneous (145-38 Ma) rocks are usually much older than the gold deposits and most are suspect because they are from incompletely reset preore micas or from mixtures of preore and ore-stage mica. Fission track dates on zircons are also generally older than the deposits (169-35 Ma) and are not completely reset by mineralization. Apatites are likley to be reset by the hydrothermal systems (and by younger thermal events) and yield dates (83-22 Ma) that are younger than those from zircon.

Conditions and timescales for welding block-and-ash flow deposits

NASA Astrophysics Data System (ADS)

Heap, M. J.; Kolzenburg, S.; Russell, J. K.; Campbell, M. E.; Welles, J.; Farquharson, J. I.; Ryan, A.

2014-12-01

Welding of pyroclastic deposits to reform a coherent rock mass is a common phenomenon, especially for pumiceous pyroclastic density current deposits (i.e., ignimbrites). However, and despite the pervasive abundance of block-and-ash flow (BAF) deposits in the geological and modern record, instances of strongly welded BAF deposits are few. Here, we present a series of high-temperature (800-900 °C) compaction experiments designed to map the conditions (deposit thickness/stress and temperature/viscosity) and timescales that permit or inhibit the welding of BAF deposits. Our experiments were performed on unconsolidated aggregates (containing an ash and lapilli component) derived from crushed and sieved lava blocks (containing 25% crystals) taken from the well-documented welded BAF deposit at Mount Meager volcano (British Columbia, Canada). The experiments demonstrate that welding efficiency increases with increasing time and temperature. Progressive welding is expressed by increasing axial strain, porosity loss, and bulk density. The rate of change of each of these physical properties reduces as welding progresses. Microstructural analysis of the experimental products shows that the loss of interclast porosity during welding results from the progressive sintering and amalgamation of vitric fragments, and that the pore shape changes from sub-equant pores to stretched lenses sandwiched between vitric and crystal fragments. The coincidence between the microstructure and rock physical properties of the natural and experimental samples highlight that we have successfully reproduced welded BAF in the laboratory. Furthermore, our permeability measurements highlight a hysteresis in the return journey of the "there-and-back-again" volcanic permeability cycle (expressed by an increase in permeability due to vesiculation and fragmentation followed by a decrease due to welding). This hysteresis cannot be described by a single porosity-permeability power law relationship and reflects the change in pore shape and connectivity during welding. Finally, we show that a simple model for welding can accurately forecast the welding timescales of the BAF deposit at Mount Meager (as reconstructed from the collapse of the Lillooet River valley dam) using our experimental data. We use this validation as a platform to provide a universal window for the welding of BAF deposits, also applicable for comparable welded deposits (e.g., welded autobreccias in block-lavas and lava domes), for a broad range of deposit thickness (or stress) and effective viscosity.

The CVD ZrB2 as a selective solar absorber

NASA Astrophysics Data System (ADS)

Randich, E.; Allred, D. D.

Coatings of ZrB2 and TiB2 for photothermal solar absorber applications were prepared using chemical vapor deposition (CVD) techniques. Oxidation tests suggest a maximum temperature limit for air exposure of 600 K for TiB2 and 800 K for Z4B2. Both materials exhibit innate spectral selectivity with emittance at 375 K ranging from 0.06 to 0.09 and solar absorptance for ZrB2 ranging from 0.67 to 0.77 and solar absorptance for TiB2 ranging from 0.46 to 0.58. ZrB2 has better solar selectivity and more desirable oxidation behavior than TiB2. A 0.071 micrometer antireflection coating of Si3N4 deposited on the ZrB2 coating leads to an increase in absorptance from 0.77 to 0.93, while the emittance remains unchanged.

Fabrication of micromachined ceramic thin-film-type pressure sensors for overpressure tolerance and its characteristics

NASA Astrophysics Data System (ADS)

Chung, Gwiy-Sang; Kim, Jae-Min

2004-04-01

This paper describes the fabrication process and characteristics of ceramic thin-film pressure sensors based on Ta-N strain gauges for harsh environment applications. The Ta-N thin-film strain gauges are sputter-deposited on a thermally oxidized micromachined Si diaphragm with buried cavities for overpressure tolerance. The proposed device takes advantage of the good mechanical properties of single-crystalline Si as a diaphragm fabricated by SDB and electrochemical etch-stop technology, and in order to extend the temperature range, it has relatively higher resistance, stability and gauge factor of Ta-N thin-films more than other gauges. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low nonlinearity and excellent temperature stability. The sensitivity is 1.21-1.097 mV/V×kgf/cm2 in temperature ranges of 25-200°C and a maximum non-linearity is 0.43 %FS.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hou, Huilong; Hamilton, Reginald F., E-mail: rfhamilton@psu.edu; Horn, Mark W.

NiTi shape memory alloy (SMA) thin films were fabricated using biased target ion beam deposition (BTIBD), which is a new technique for fabricating submicrometer-thick SMA thin films, and the capacity to exhibit shape memory behavior was investigated. The thermally induced shape memory effect (SME) was studied using the wafer curvature method to report the stress-temperature response. The films exhibited the SME in a temperature range above room temperature and a narrow thermal hysteresis with respect to previous reports. To confirm the underlying phase transformation, in situ x-ray diffraction was carried out in the corresponding phase transformation temperature range. The B2more » to R-phase martensitic transformation occurs, and the R-phase transformation is stable with respect to the expected conversion to the B19′ martensite phase. The narrow hysteresis and stable R-phase are rationalized in terms of the unique properties of the BTIBD technique.« less

Defect analysis of the LED structure deposited on the sapphire substrate

NASA Astrophysics Data System (ADS)

Nie, Qichu; Jiang, Zhimin; Gan, Zhiyin; Liu, Sheng; Yan, Han; Fang, Haisheng

2018-04-01

Transmission electron microscope (TEM) and double-crystal X-ray diffraction (DCXRD) measurements have been performed to investigate dislocations of the whole structure of the LED layers deposited on both the conventional (unpatterned sapphire substrate, UPSS) and patterned sapphire substrates (PSS). TEM results show that there exists a dislocation-accumulated region near the substrate/GaN interface, where the dislocation density is much higher with the UPPS than that with the PSS. It indicates that the pattern on the substrate surface is able to block the formation and propagation of dislocations. Further analysis discloses that slope of the pattern is found to suppress the deposition of GaN, and thus to provide more spaces for the epitaxially lateral overgrowth (ELO) of high temperature GaN, which significantly reduces the number of the initial islands, and minimizes dislocation formation due to the island coalescence. V-defect incorporating the threading dislocation is detected in the InGaN/GaN multi-quantum wells (MQWs), and its propagation mechanism is determined as the decrease of the surface energy due to the incorporation of indium. In addition, temperature dependence of dislocation formation is further investigated. The results show that dislocation with the screw component decreases monotonously as temperature goes up. However, edge dislocation firstly drops, and then increases by temperature due to the enhanced thermal mismatch stress. It implies that an optimized range of the growth temperature can be obtained to improve quality of the LED layers.

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

NASA Astrophysics Data System (ADS)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

Mechanical and physicochemical properties of AlN thin films obtained by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Cibert, C.; Tétard, F.; Djemia, P.; Champeaux, C.; Catherinot, A.; Tétard, D.

2004-10-01

AlN thin films have been deposited on Si(100) substrates by a pulsed laser deposition method. The deposition parameters (pressure, temperature, purity of target) play an important role in the mechanical and physicochemical properties. The films have been characterized using X-ray diffraction, atomic force microscopy, Brillouin light scattering, Fourier transform infrared spectroscopy and wettability testing. With a high purity target of AlN and a temperature deposition of 750 ∘C, the measured Rayleigh wave velocity is close to the one previously determined for AlN films grown at high temperature by metal-organic chemical vapour deposition. Growth of nanocrystalline AlN at low temperature and of AlN film with good crystallinity for samples deposited at higher temperature is confirmed by infrared spectroscopy, as it was by atomic force microscopy, in agreement with X-ray diffraction results. A high hydrophobicity has been measured with zero polar contribution for the surface energy. These results confirm that films made by pulsed laser deposition of pure AlN at relatively low temperature have good prospects for microelectromechanical systems applications.

Deposition-temperature dependence of structural anisotropy in amorphous Tb-Fe films

NASA Astrophysics Data System (ADS)

Harris, V. G.; Elam, W. T.; Koon, N. C.; Hellman, F.

1994-02-01

The anisotropic local structure in a series of amorphous Tb26Fe74 films deposited at different deposition temperatures and having different magnetic anisotropy energies have been investigated using polarization-dependent extended x-ray-absorption fine-structure measurements. Samples deposited at temperatures >=300 K exhibit anisotropic pair correlations where like atomic pairs are favored in plane and unlike pairs are favored out of plane. Both the anisotropic pair correlations and the perpendicular magnetic anisotropy increase with increasing deposition temperature. In contrast, a sample deposited at 77 K was found to have isotropic pair correlations, low perpendicular magnetic anisotropy, and a large (~=1%) in-plane compression.

Fluid-deposited graphitic inclusions in quartz: Comparison between KTB (German Continental Deep-Drilling) core samples and artificially reequilibrated natural inclusions

USGS Publications Warehouse

Pasteris, J.D.; Chou, I.-Ming

1998-01-01

We used Raman microsampling spectroscopy (RMS) to determine the degree of crystallinity of minute (2-15 ??m) graphite inclusions in quartz in two sets of samples: experimentally reequilibrated fluid inclusions in a natural quartz grain and biotite-bearing paragneisses from the KTB deep drillhole in SE Germany. Our sequential reequilibration experiments at 725??C on initially pure CO2 inclusions in a quartz wafer and the J. Krautheim (1993) experiments at 900-1100??C on organic compounds heated in gold or platinum capsules suggest that, at a given temperature, (1) fluid-deposited graphite will have a lower crystallinity than metamorphosed organic matter and (2) that the crystallinity of fluid-deposited graphite is affected by the composition of the fluid from which it was deposited. We determined that the precipitation of more-crystalline graphite is favored by lower fH2 (higher fO2), and that the crystallinity of graphite is established by the conditions (including gas fugacities) that pertain as the fluid first reaches graphite saturation. Graphite inclusions within quartz grains in the KTB rocks show a wide range in crystallinity index, reflecting three episodes of carbon entrapment under different metamorphic conditions. Isolated graphite inclusions have the spectral properties of totally ordered, completely crystalline graphite. Such crystallinity suggests that the graphite was incorporated from the surrounding metasedimentary rocks, which underwent metamorphism at upper amphibolite-facies conditions. Much of the fluid-deposited graphite in fluid inclusions, however, shows some spectral disorder. The properties of that graphite resemble those of experimental precipitates at temperatures in excess of 700??C and at elevated pressures, suggesting that the inclusions represent precipitates from C-O-H fluids trapped under conditions near those of peak metamorphism at the KTB site. In contrast, graphite that is intimately associated with chlorite and other (presumably low-temperature) silicates in inclusions is highly disordered and spectrally resembles kerogens. This graphite probably was deposited during later greenschist-facies retrograde metamorphism at about 400-500??C. The degree of crystallinity of fluid-deposited graphite is shown to be a much more complex function of temperature than is the crystallinity of metamorphic graphite. To some extent, experiments can provide temperature-calibration of the crystallinity index. However, the difference in time scales between experimental runs and geologic processes makes it difficult to infer specific temperatures for naturally precipitated graphite. Copyright ?? 1998 Elsevier Science Ltd.

Detrital and early chemical remanent magnetization in redbeds and their rock magnetic signature: Zicapa Formation, southern Mexico

NASA Astrophysics Data System (ADS)

Sierra-Rojas, Maria Isabel; Molina-Garza, Roberto Stanley

2018-06-01

Poles from continental redbeds are a large fraction of the world's palaeomagnetic database. Nonetheless, the time of acquisition and origin of the remanent magnetization of redbeds has been long debated. We report palaeomagnetic data, rock magnetic data and microscope observations for Lower Cretaceous redbeds in southern Mexico. These data allow us to discriminate between the hysteresis properties of remanent magnetizations of detrital and chemical origin, and to establish the early origin of a chemical remanence. Red sandstones of the Zicapa Formation contain a multicomponent remanence revealed by thermal demagnetization, and consisting of three stable components with partially overlapping laboratory unblocking temperatures of <250 °C, ˜300 to ˜500 °C and >600 °C, (low, intermediate and high temperature, respectively). They are interpreted as a viscous remanence residing in detrital magnetite, a chemical remanence residing in authigenic hematite and a depositional remanence residing in detrital hematite, respectively. The low-temperature component is nearly parallel to the recent dipole field. The tilt-corrected overall site means of the intermediate (chemical) and high temperature (depositional) components are indistinguishable (Dec = 282.0°, Inc = 12.4°, k = 13.33, α95 = 10.1°, N = 17, for the intermediate temperature; and Dec = 272.5°, Inc = 16.5°, k = 14.04, α95 = 11, N = 14, for the high temperature). Elongation/inclination analysis suggests that depositional and chemical components require applying an f = factor of approximately 0.4. Both of these components define a magnetic polarity zonation, but the polarity of the chemical and detrital components may or may not be the same. The chemical remanence coincides, more often than not, with the polarity of the depositional remanence of the overlying (younger) strata, suggesting a delay in remanence acquisition of tens to a few hundred ka for the chemical component. Pigmentary and detrital haematite were recognized with microscopic observations. The particle size of haematite ranges from approximately 10 to 300 μm for detrital haematite (martite, specularite and laterite), and from ca. 0.2 to 1 μm for pigmentary haematite flakes. The IRM of these rocks can be modelled with components of low coercivity (H1/2 between 5 and 10 mT interpreted as detrital magnetite), and components of a wide coercivity range (prevailing H1/2 from ˜400 to 600 mT interpreted as haematite). Hysteresis ratios show a systematic correlation with demagnetization behaviour, with lower Hcr/Hc values and higher Mrs/Ms values for samples with a dominant chemical component, than form samples with a significant (>40 per cent) depositional component.

Electromechanical properties of amorphous In-Zn-Sn-O transparent conducting film deposited at various substrate temperatures on polyimide substrate

NASA Astrophysics Data System (ADS)

Kim, Young Sung; Lee, Eun Kyung; Eun, Kyoungtae; Choa, Sung-Hoon

2015-09-01

The electromechanical properties of the amorphous In-Zn-Sn-O (IZTO) film deposited at various substrate temperatures were investigated by bending, stretching, twisting, and cyclic bending fatigue tests. Amorphous IZTO films were grown on a transparent polyimide substrate using a pulsed DC magnetron sputtering system at different substrate temperatures ranging from room temperature to 200 °C. A single oxide alloyed ceramic target (In2O3: 80 wt %, ZnO: 10 wt %, SnO2: 10 wt % composition) was used. The amorphous IZTO film deposited at 150 °C exhibited an optimized electrical resistivity of 5.8 × 10-4 Ω cm, optical transmittance of 87%, and figure of merit of 8.3 × 10-3 Ω-1. The outer bending tests showed that the critical bending radius decreased as substrate temperature increased. On the other hand, in the inner bending tests, the critical bending radius increased with an increase in substrate temperature. The differences in the bendability of IZTO films for the outer and inner bending tests could be attributed to the internal residual stress of the films. The uniaxial stretching tests also showed the effects of the internal stress on the mechanical flexibility of the film. The bending and stretching test results demonstrated that the IZTO film had higher bendability and stretchability than the conventional ITO film. The IZTO film could withstand 10,000 bending cycles at a bending radius of 10 mm. The effect of the surface roughness on the mechanical durability of all IZTO films was very small due to their very smooth surfaces.

Intermediate sulfidation type base metal mineralization at Aliabad-Khanchy, Tarom-Hashtjin metallogenic belt, NW Iran

USGS Publications Warehouse

Kouhestani, Hossein; Mokhtari, Mir Ali Asghar; Chang, Zhaoshan; Johnson, Craig A.

2018-01-01

The Aliabad-Khanchy epithermal base metal deposit is located in the Tarom-Hashtjin metallogenic belt (THMB) of northwest Iran. The mineralization occurs as Cu-bearing brecciated quartz veins hosted by Eocene volcanic and volcaniclastic rocks of the Karaj Formation. Ore formation can be divided into five stages, with most ore minerals, such as pyrite and chalcopyrite being formed in the early stages. The main wall-rock alteration is silicification, and chlorite, argillic and propylitic alteration. Microthermometric measurements of fluid inclusion assemblages show that the ore-forming fluids have eutectic temperatures between −30 and −52 °C, trapping temperatures of 150–290 °C, and salinities of 6.6–12.4 wt% NaCl equiv. These data demonstrate that the ore-forming fluids were medium- to high-temperature, medium- to low-salinity, and low-density H2O–NaCl–CaCl2 fluids. Calculated δ18O values indicate that ore-forming hydrothermal fluids had δ18Owater ranging from +3.6‰ to +0.8‰, confirming that the ore–fluid system evolved from dominantly magmatic to dominantly meteoric. The calculated 34SH2S values range from −8.1‰ to −5.0‰, consistent with derivation of the sulfur from either magma or possibly from local volcanic wall-rock. Combined, the fluid inclusion and stable isotope data indicate that the Aliabad-Khanchy deposit formed from magmatic-hydrothermal fluids. After rising to a depth of between 790 and 500 m, the fluid boiled and subsequent hydraulic fracturing may have led to inflow and/or mixing of early magmatic fluids with circulating groundwater causing deposition of base metals due to dilution and/or cooling. The Aliabad-Khanchy deposit is interpreted as an intermediate-sulfidation style of epithermal mineralization. Our data suggest that the mineralization at Aliabad-Khanchy and other epithermal deposits of the THMB formed by hydrothermal activity related to shallow late Eocene magmatism. The altered Eocene volcanic and volcaniclastic rocks, especially at the intersection of subvolcanic stocks with faults were the most favorable sites for epithermal ore bodies in the THMB.

Ion beam modification of structural and optical properties of GeO2 thin films deposited at various substrate temperatures using pulsed laser deposition

NASA Astrophysics Data System (ADS)

Rathore, Mahendra Singh; Vinod, Arun; Angalakurthi, Rambabu; Pathak, A. P.; Singh, Fouran; Thatikonda, Santhosh Kumar; Nelamarri, Srinivasa Rao

2017-11-01

High energy heavy ion irradiation-induced modification of high quality crystalline GeO2 thin films grown at different substrate temperatures ranging from 100 to 500 °C using pulsed laser deposition has been investigated. The pristine films were irradiated with 100 MeV Ag7+ ions at fixed fluence of 1 × 1013 ions/cm2. These pristine and irradiated films have been characterized using X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared and photoluminescence spectroscopy. The XRD and Raman results of pristine films confirm the formation of hexagonal structure of GeO2 films, whereas the irradiation eliminates all the peaks except major GeO2 peak of (101) plane. It is evident from the XRD results that crystallite size changes with substrate temperature and SHI irradiation. The surface morphology of films was studied by AFM. The functional group of pristine and irradiated films was investigated by IR transmission spectra. Pristine films exhibited strong photoluminescence around 342 and 470 nm due to oxygen defects and a red shift in the PL bands is observed after irradiation. Possible mechanism of tuning structural and optical properties of pristine as well as irradiated GeO2 films with substrate temperature and ion beam irradiation has been reported in detail.

Stable isotope, chemical, and mineral compositions of the Middle Proterozoic Lijiaying Mn deposit, Shaanxi Province, China

USGS Publications Warehouse

Yeh, Hsueh-Wen; Hein, James R.; Ye, Jie; Fan, Delian

1999-01-01

The Lijiaying Mn deposit, located about 250 km southwest of Xian, is a high-quality ore characterized by low P and Fe contents and a mean Mn content of about 23%. The ore deposit occurs in shallow-water marine sedimentary rocks of probable Middle Proterozoic age. Carbonate minerals in the ore deposit include kutnahorite, calcite, Mn calcite, and Mg calcite. Carbon (−0.4 to −4.0‰) and oxygen (−3.7 to −12.9‰) isotopes show that, with a few exceptions, those carbonate minerals are not pristine low-temperature marine precipitates. All samples are depleted in rare earth elements (REEs) relative to shale and have negative Eu and positive Ce anomalies on chondrite-normalized plots. The Fe/Mn ratios of representative ore samples range from about 0.034 to <0.008 and P/Mn from 0.0023 to <0.001. Based on mineralogical data, the low ends of those ranges of ratios are probably close to ratios for the pure Mn minerals. Manganese contents have a strong positive correlation with Ce anomaly values and a moderate correlation with total REE contents. Compositional data indicate that kutnahorite is a metamorphic mineral and that most calcites formed as low-temperature marine carbonates that were subsequently metamorphosed. The braunite ore precursor mineral was probably a Mn oxyhydroxide, similar to those that formed on the deep ocean-floor during the Cenozoic. Because the Lijiaying precursor mineral formed in a shallow-water marine environment, the atmospheric oxygen content during the Middle Proterozoic may have been lower than it has been during the Cenozoic.

The calculation of band gap energy in zinc oxide films

NASA Astrophysics Data System (ADS)

Arif, Ali; Belahssen, Okba; Gareh, Salim; Benramache, Said

2015-01-01

We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor; the thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis techniques. The thin films were deposited at different substrate temperatures ranging between 200 and 500 °C. In this paper, we present a new approach to control the optical gap energy of ZnO thin films by concentration of the ZnO solution and substrate temperatures from experimental data, which were published in international journals. The model proposed to calculate the band gap energy with the Urbach energy was investigated. The relation between the experimental data and theoretical calculation suggests that the band gap energies are predominantly estimated by the Urbach energies, film transparency, and concentration of the ZnO solution and substrate temperatures. The measurements by these proposal models are in qualitative agreements with the experimental data; the correlation coefficient values were varied in the range 0.96-0.99999, indicating high quality representation of data based on Equation (2), so that the relative errors of all calculation are smaller than 4%. Thus, one can suppose that the undoped ZnO thin films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition and contained higher optical band gap energy.

Atomic Layer Deposition of Aluminum Sulfide: Growth Mechanism and Electrochemical Evaluation in Lithium-Ion Batteries

DOE PAGES

Meng, Xiangbo; Cao, Yanqiang; Libera, Joseph A.; ...

2017-10-01

This work describes the synthesis of aluminum sulfide (AlS x) thin films by atomic layer deposition (ALD) using tris(dimethylamido)aluminum and hydrogen sulfide. We employed a suite of in situ measurement techniques to explore the ALD AlS x growth mechanism, including quartz crystal microbalance, quadrupole mass spectrometry, and Fourier transform infrared spectroscopy. A variety of ex situ characterization techniques were used to determine the growth characteristics, morphology, elemental composition, and crystallinity of the resultant AlS x films. This study revealed that the AlS x growth was self-limiting in the temperature range 100–250 °C, and the growth per cycle decreased linearly withmore » increasing temperature from ~0.45 Å/cycle at 100 °C to ~0.1 Å/cycle at 250 °C. The AlSx films were amorphous in this temperature range. We conducted electrochemical testing to evaluate the ALD AlS x as a potential anode material for lithium-ion batteries (LIBs). Finally, the ALD AlS x exhibited reliable cyclability over 60 discharge–charge cycles with a sustainable discharge capacity of 640 mAh/g at a current density of 100 mA/g in the voltage window of 0.6–3.5 V.« less

Atomic Layer Deposition of Aluminum Sulfide: Growth Mechanism and Electrochemical Evaluation in Lithium-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Xiangbo; Cao, Yanqiang; Libera, Joseph A.

This work describes the synthesis of aluminum sulfide (AlS x) thin films by atomic layer deposition (ALD) using tris(dimethylamido)aluminum and hydrogen sulfide. We employed a suite of in situ measurement techniques to explore the ALD AlS x growth mechanism, including quartz crystal microbalance, quadrupole mass spectrometry, and Fourier transform infrared spectroscopy. A variety of ex situ characterization techniques were used to determine the growth characteristics, morphology, elemental composition, and crystallinity of the resultant AlS x films. This study revealed that the AlS x growth was self-limiting in the temperature range 100–250 °C, and the growth per cycle decreased linearly withmore » increasing temperature from ~0.45 Å/cycle at 100 °C to ~0.1 Å/cycle at 250 °C. The AlSx films were amorphous in this temperature range. We conducted electrochemical testing to evaluate the ALD AlS x as a potential anode material for lithium-ion batteries (LIBs). Finally, the ALD AlS x exhibited reliable cyclability over 60 discharge–charge cycles with a sustainable discharge capacity of 640 mAh/g at a current density of 100 mA/g in the voltage window of 0.6–3.5 V.« less

Physical vapor deposition of one-dimensional nanoparticle arrays on graphite: seeding the electrodeposition of gold nanowires.

PubMed

Cross, C E; Hemminger, J C; Penner, R M

2007-09-25

One-dimensional (1D) ensembles of 2-15 nm diameter gold nanoparticles were prepared using physical vapor deposition (PVD) on highly oriented pyrolytic graphite (HOPG) basal plane surfaces. These 1D Au nanoparticle ensembles (NPEs) were prepared by depositing gold (0.2-0.6 nm/s) at an equivalent thickness of 3-4 nm onto HOPG surfaces at 670-690 K. Under these conditions, vapor-deposited gold nucleated selectively at the linear step edge defects present on these HOPG surfaces with virtually no nucleation of gold particles on terraces. The number density of 2-15 nm diameter gold particles at step edges was 30-40 microm-1. These 1D NPEs were up to a millimeter in length and organized into parallel arrays on the HOPG surface, following the organization of step edges. Surprisingly, the deposition of more gold by PVD did not lead to the formation of continuous gold nanowires at step edges under the range of sample temperature or deposition flux we have investigated. Instead, these 1D Au NPEs were used as nucleation templates for the preparation by electrodeposition of gold nanowires. The electrodeposition of gold occurred selectively on PVD gold nanoparticles over the potential range from 700-640 mV vs SCE, and after optimization of the electrodeposition parameters continuous gold nanowires as small as 80-90 nm in diameter and several micrometers in length were obtained.

Surface scaling analysis of textured MgO thin films fabricated by energetic particle self-assisted deposition

NASA Astrophysics Data System (ADS)

Feng, Feng; Zhang, Xiangsong; Qu, Timing; Liu, Binbin; Huang, Junlong; Li, Jun; Xiao, Shaozhu; Han, Zhenghe; Feng, Pingfa

2018-04-01

In the fabrication of a high-temperature superconducting coated conductor, the surface roughness and texture of buffer layers can significantly affect the epitaxially grown superconductor layer. A biaxially textured MgO buffer layer fabricated by ion beam assisted deposition (IBAD) is widely used in the coated conductor manufacture due to its low thickness requirement. In our previous study, a new method called energetic particle self-assisted deposition (EPSAD), which employed only a sputtering deposition apparatus without an ion source, was proposed for fabricating biaxially textured MgO films on non-textured substrates. In this study, our aim was to investigate the deposition mechanism of EPSAD-MgO thin films. The behavior of the surface roughness (evaluated by Rq) was studied using atomic force microscopy (AFM) measurements with three scan scales, while the in-plane and out-of-plane textures were measured using X-ray diffraction (XRD). It was found that the variations of surface roughness and textures along with the increase in the thickness of EPSAD-MgO samples were very similar to those of IBAD-MgO reported in the literature, revealing the similarity of their deposition mechanisms. Moreover, fractal geometry was utilized to conduct the scaling analysis of EPSAD-MgO film's surface. Different scaling behaviors were found in two scale ranges, and the indications of the fractal properties in different scale ranges were discussed.

Near-infrared localized surface plasmon resonance of self-growing W-doped VO2 nanoparticles at room temperature

NASA Astrophysics Data System (ADS)

Nishikawa, Kazutaka; Kishida, Yoshihiro; Ito, Kota; Tamura, Shin-ichi; Takeda, Yasuhiko

2017-11-01

Nanoparticles (NPs) of vanadium dioxide (VO2) in the metal state exhibit localized surface plasmon resonance (LSPR) at 1200-1600 nm, which fills the gap between the absorption ranges of silicon and the LSPR of conventional transparent conductor NPs (ZnO:Al, In2O3:Sn, etc.). However, two issues of the lithographic process for NP formation and the metal-insulator transition temperature (69 °C) higher than room temperature have made it difficult to use VO2 NPs for applications such as energy conversion devices, near infrared (NIR) light detectors, and bio-therapy. In this study, we developed a self-growing process for tungsten (W)-doped VO2 NPs that are in the metal state at room temperature, using sputter deposition and post-lamp annealing. The changes in the LSPR peak wavelengths with the NP size were well controlled by changing the deposited film thickness and oxygen pressure during the post-annealing treatment. The presented results resolve the difficulties of using the metal-insulator transition material VO2 for practical NIR utilization.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Helzel, J.; Jankowski, S.; El Helou, M.

The optical transitions of pentacene films deposited on ZnO have been studied by absorption spectroscopy as a function of temperature in the range of room temperature down to 10 K. The pentacene films were prepared with thicknesses of 10 nm, 20 nm, and 100 nm on the ZnO-O(000-1) surface by molecular beam deposition. A unique temperature dependence has been observed for the two Davydov components of the excitons for different film thicknesses. At room temperature, the energetic positions of the respective absorption bands are the same for all films, whereas the positions differ more than 20 meV at 10 Kmore » caused by the very different expansion coefficients of pentacene and ZnO. Although the pentacene is just bonded via van der Waals interaction to the ZnO substrate, the very first pentacene monolayer (adlayer) is forced to keep the initial position on the ZnO surface and suffering, therefore, a substantial tensile strain. For all the subsequent pentacene monolayers, the strain is reduced step by step resulting electronically in a strong potential gradient at the interface.« less

Tuning the transition temperature of WSi$$_{x}$$ alloys for use in cryogenic microcalorimeters

DOE PAGES

Cecil, T.; Gades, L.; Madden, T.; ...

2016-03-10

Here, microwave kinetic inductance detectors (MKID) provide a pathway to highly multiplexed, high-resolution, detectors. Over the past several years we have introduced the concept of the Thermal Kinetic Inductance Detector (TKID), which operates as a microcalorimeter. As with other microcalorimeters, the thermal noise of a TKID is reduced when the operating temperature is decreased. However, because the sensitivity of a TKID decreases as the operating temperature drops below 20% of T C, the T C of the resonator material must be tuned to match the desired operating temperature. We have investigated the WSimore » $$_{x}$$ alloy system as a material for these detectors. By co-sputtering from a Si andW2Si target, we have deposited WSi$$_{x}$$ films with a tunable T C that ranges from 5 K down to 500 mK. These films provide a large kinetic inductance fraction and relatively low noise levels. We provide results of these studies showing the T C, resistivity, quality factors, and noise as a function of deposition conditions. These results show that WSi$$_{x}$$ is a good candidate for TKIDs.« less

Reduction of particle deposition on substrates using temperature gradient control

DOEpatents

Rader, Daniel J.; Dykhuizen, Ronald C.; Geller, Anthony S.

2000-01-01

A method of reducing particle deposition during the fabrication of microelectronic circuitry is presented. Reduction of particle deposition is accomplished by controlling the relative temperatures of various parts of the deposition system so that a large temperature gradient near the surface on which fabrication is taking place exists. This temperature gradient acts to repel particles from that surface, thereby producing cleaner surfaces, and thus obtaining higher yields from a given microelectronic fabrication process.

Supramolecular engineering through temperature-induced chemical modification of 2H-tetraphenylporphyrin on Ag(111): flat phenyl conformation and possible dehydrogenation reactions.

PubMed

Di Santo, Giovanni; Blankenburg, Stephan; Castellarin-Cudia, Carla; Fanetti, Mattia; Borghetti, Patrizia; Sangaletti, Luigi; Floreano, Luca; Verdini, Alberto; Magnano, Elena; Bondino, Federica; Pignedoli, Carlo A; Nguyen, Manh-Thuong; Gaspari, Roberto; Passerone, Daniele; Goldoni, Andrea

2011-12-16

Scratching the surface: Formation of a monolayer of 2H-tetraphenylporphyrins (2H-TPP) on Ag(111), either by sublimation of a multilayer in the range 525-600 K or by annealing (at the same temperature) a monolayer deposited at room temperature, induces a chemical modification of the molecules. Rotation of the phenyl rings into a flat conformation is observed and tentatively explained, by using DFT calculations, as a peculiar reaction due to molecular dehydrogenation. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High temperature thermochromic polydiacetylenes: Design and colorimetric properties

NASA Astrophysics Data System (ADS)

Huo, Jingpei; Hu, Zhudong; He, Guozhang; Hong, Xiaxiao; Yang, Zhihao; Luo, Shihe; Ye, Xiufang; Li, Yanli; Zhang, Yubo; Zhang, Min; Chen, Hong; Fan, Ting; Zhang, Yuyuan; Xiong, Bangyun; Wang, Zhaoyang; Zhu, Zhibo; Chen, Dongchu

2017-11-01

Three novel polydiacetylenes (PDAs) are synthesized through the self-assembly followed by the topochemical polymerization via controllable electrophoretic deposition. All the samples could undergo a multi-step thermochromic process, turning purple and red successively over a wide range from room temperature to above 250 °C. Resulting PDAs are studied by UV-vis, IR, Raman spectroscopies, and chromoisomerism by naked eye visualization; their stabilities by thermogravimetric method, and emission behavior by fluorescence spectroscopy. To study the mechanism of the thermochromic response, temperature-dependent UV-vis spectra, the results of which successfully highlighted the close relationship between chromatic transitions and the conformational changes.

Temperature dependent growth of GaN nanowires using CVD technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mukesh, E-mail: mukeshjihrnp@gmail.com; Singh, R.; Kumar, Vikram

2016-05-23

Growth of GaN nanowires have been carried out on sapphire substrates with Au as a catalyst using chemical vapour deposition technique. GaN nanowires growth have been studied with the experimental parameter as growth temperature. Diameter of grown GaN nanowires are in the range of 50 nm to 100 nm while the nanowire length depends on growth temperature. Morphology of the GaN nanowires have been studied by scanning electron microscopy. Crystalline nature has been observed by XRD patterns. Optical properties of grown GaN nanowires have been investigated by photoluminescence spectra.

Method for preparing high transition temperature Nb.sub.3 Ge superconductors

DOEpatents

Newkirk, Lawrence R.; Valencia, Flavio A.

1977-01-01

Bulk coatings of Nb.sub.3 Ge superconductors having transition temperatures in excess of 20 K are readily formed by a chemical vapor deposition technique involving the coreduction of NbCl.sub.5 and GeCl.sub.4 in the presence of hydrogen. The NbCl.sub.5 vapor may advantageously be formed quantitatively in the temperature range of about 250.degree. to 260.degree. C by the chlorination of Nb metal provided the partial pressure of the product NbCl.sub.5 vapor is maintained at or below about 0.1 atm.

Method for preparing high transition temperature Nb/sub 3/Ge superconductors. [Patent application

DOEpatents

Newkirk, L.R.; Valencia, F.A.

1975-06-26

Bulk coatings of Nb/sub 3/Ge superconductors having transition temperatures in excess of 20/sup 0/K are readily formed by a chemical vapor deposition technique involving the coreduction of NbCl/sub 5/ and GeCl/sub 4/ in the presence of hydrogen. The NbCl/sub 5/ vapor may advantageously be formed quantitatively in the temperature range of about 250 to 260/sup 0/C by the chlorination of Nb metal provided the partial pressure of the product NbCl/sub 5/ vapor is maintained at or below about 0.1 atm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skariah, Benoy, E-mail: skariahbenoy@yahoo.co.in, E-mail: dr.boben1@gmail.com; Thomas, Boben, E-mail: skariahbenoy@yahoo.co.in, E-mail: dr.boben1@gmail.com

For LPG sensing, boron doped (0.2 to 0.8 wt. %) polycrystalline tin oxide thin films are deposited by spray pyrolysis in the temperature range 325 - 430 °C. Sensor response of 56 % is achieved for 1000 ppm of LPG, at an operating temperature of 350 °C. The effects of ageing under ambient conditions on the sensor response are investigated for a storage period of six years. Ageing increases the film resistance but the gas response is lowered. XRD, SEM, FESEM, FTIR and XPS are utilized for structural, morphological and compositional charaterisations.

Effect of internal stress on the electro-optical behaviour of Al-doped ZnO transparent conductive thin films

NASA Astrophysics Data System (ADS)

Proost, J.; Henry, F.; Tuyaerts, R.; Michotte, S.

2016-08-01

In this work, we will report on scientific efforts aimed at unraveling the quantitative effect of elastic strain on the electro-optical behaviour of Al-doped zinc oxide (AZO). AZO thin films have been deposited by reactive magnetron sputtering to thicknesses from 300 to 500 nm, both on extra-clear glass substrates as well as on oxidised Si wafers. This resulted in both cases in polycrystalline, strongly textured (002) films. During deposition, the internal stress evolution in the growing film was monitored in-situ using high resolution curvature measurements. The resulting growth-induced elastic strain, which was found to depend heavily on the oxygen partial pressure, could further be modulated by appropriately choosing the deposition temperature. The latter also induces an additional extrinsic thermal stress component, whose sign depends on the substrate used. As such, a wide range of biaxial internal stresses could be achieved, from -600 MPa in compression up to 800 MPa in tension. The resulting charge carrier mobilities, obtained independently from room temperature Hall measurements, were found to range between 5 and 25 cm2/V s. Interestingly, the maximum mobility occurred at the zero-stress condition, and together with a charge carrier concentration of about 8 × 1020 cm-3, this gave rise to a resistivity of only 300 μΩ cm. From the stress-dependent optical transmission spectra in the range of 200-1000 nm, the pressure coefficient of the optical bandgap was estimated from the corresponding Tauc plots to be 31 meV/GPa, indicating a very high strain-sensitivity as well.

Paleoclimatological analysis of Late Eocene core, Manning Formation, Brazos County, Texas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yancey, T.; Elsik, W.

1994-09-01

A core of the basal part of the Manning Formation was drilled to provide a baseline for paleoclimate analysis of the expanded section of siliciclastic sediments of late Eocene age in the outcrop belt. The interdeltaic Jackson Stage deposits of this area include 20+ cyclic units containing both lignite and shallow marine sediments. Depositional environments can be determined with precision and the repetitive nature of cycles allows comparisons of the same environment throughout, effectively removing depositional environment as a variable in interpretation of climate signal. Underlying Yegua strata contain similar cycles, providing 35+ equivalent environmental transacts within a 6 m.y.more » time interval of Jackson and Yegua section, when additional cores are taken. The core is from a cycle deposited during maximum flooding of the Jackson Stage, with deposits ranging from shoreface (carbonaceous) to midshelf, beyond the range of storm sand deposition. Sediments are leached of carbonate, but contain foram test linings, agglutinated forams, fish debris, and rich assemblages of terrestrial and marine palynomorphs. All samples examined contain marine dinoflagellates, which are most abundant in transgressive and maximum flood zones, along with agglutinated forams and fish debris. This same interval contains two separate pulses of reworked palynomorphs. The transgressive interval contains Glaphyrocysta intricata, normally present in Yegua sediments. Pollen indicates fluctuating subtropical to tropical paleoclimates, with three short cycles of cooler temperatures, indicated by abundance peaks of alder pollen (Alnus) in transgressive, maximum flood, and highstand deposits.« less

Surface properties of magnetite in high temperature aqueous electrolyte solutions: A review.

PubMed

Vidojkovic, Sonja M; Rakin, Marko P

2017-07-01

Deposits and scales formed on heat transfer surfaces in power plant water/steam circuits have a significant negative impact on plant reliability, availability and performance, causing tremendous economic consequences and subsequent increases in electricity cost. Consequently, the improvement of the understanding of deposition mechanisms on power generating surfaces is defined as a high priority in the power industry. The deposits consist principally of iron oxides, which are steel corrosion products and usually present in colloidal form. Magnetite (Fe 3 O 4 ) is the predominant and most abundant compound found in water/steam cycles of all types of power plants. The crucial factor that governs the deposition process and influences the deposition rate of magnetite is the electrostatic interaction between the metal wall surfaces and the suspended colloidal particles. However, there is scarcity of data on magnetite surface properties at elevated temperatures due to difficulties in their experimental measurement. In this paper a generalized overview of existing experimental data on surface characteristics of magnetite at high temperatures is presented with particular emphasis on possible application in the power industry. A thorough analysis of experimental techniques, mathematical models and results has been performed and directions for future investigations have been considered. The state-of-the-art assessment showed that for the characterization of magnetite/aqueous electrolyte solution interface at high temperatures acid-base potentiometric titrations and electrophoresis were the most beneficial and dependable techniques which yielded results up to 290 and 200°C, respectively. Mass titrations provided data on magnetite surface charge up to 320°C, however, this technique is highly sensitive to the minor concentrations of impurities present on the surface of particle. Generally, fairly good correlation between the isoelectric point (pH iep ) and point of zero charge (pH pzc ) values has been obtained. All obtained results showed that the surface of magnetite particles is negatively charged in typical high temperature thermal power plant water, which indicates the low probability of aggregation and deposition on plant metal surfaces. The results also gave strong evidence on decline of pH iep and pH pzc with temperature in the same manner as neutral pH of water. The thermodynamic parameters of magnetite surface protonation reactions were in good agreement with each other and obtained using one site/two pK and mainly one site/one pK model. All collected data provided evidences for interaction between particles, probability of deposition and eventual attachment to the steel surface at various pH and temperatures and can serve as a foundation for future surface studies aimed at optimizing plant performances and reducing of magnetite deposition. In future works it would be indispensable to provide the surface experimental data for extended temperature ranges, typical solution chemistries and metal surfaces of power plant structural components and thus obtain entire set of results useful in modeling the surface behavior and control of deposition process in power reactors and thermal plant circuits. Moreover, the acquired results will be applicable and greatly valuable to all other types of power plants, industrial facilities and technological processes using the high temperature water medium. Copyright © 2016 Elsevier B.V. All rights reserved.

Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

1988-01-01

The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

Low temperature fused deposition modeling (FDM) 3D printing of thermolabile drugs.

PubMed

Kollamaram, Gayathri; Croker, Denise M; Walker, Gavin M; Goyanes, Alvaro; Basit, Abdul W; Gaisford, Simon

2018-07-10

Fused deposition modelling (FDM) is the most commonly investigated 3D printing technology for the manufacture of personalized medicines, however, the high temperatures used in the process limit its wider application. The objective of this study was to print low-melting and thermolabile drugs by reducing the FDM printing temperature. Two immediate release polymers, Kollidon VA64 and Kollidon 12PF were investigated as potential candidates for low-temperature FDM printing. Ramipril was used as the model low melting temperature drug (109 °C); to the authors' knowledge this is the lowest melting point drug investigated to date by FDM printing. Filaments loaded with 3% drug were obtained by hot melt extrusion at 70 °C and ramipril printlets with a dose equivalent of 8.8 mg were printed at 90 °C. HPLC analysis confirmed that the drug was stable with no signs of degradation and dissolution studies revealed that drug release from the printlets reached 100% within 20-30 min. Variable temperature Raman and solid state nuclear magnetic resonance (SSNMR) spectroscopy techniques were used to evaluate drug stability over the processing temperature range. These data indicated that ramipril did not undergo degradation below its melting point (which is above the processing temperature range: 70-90 °C) but it was transformed into the impurity diketopiperazine upon exposure to temperatures higher than its melting point. The use of the excipients Kollidon VA64 and Kollidon 12PF in FDM was further validated by printing with the drug 4-aminosalicylic acid (4-ASA), which in previous work was reported to undergo degradation in FDM printing, but here it was found to be stable. This work demonstrates that the selection and use of new excipients can overcome one of the major disadvantages in FDM printing, drug degradation due to thermal heating, making this technology suitable for drugs with lower melting temperatures. Copyright © 2018 Elsevier B.V. All rights reserved.

Method of forming pointed structures

NASA Technical Reports Server (NTRS)

Pugel, Diane E. (Inventor)

2011-01-01

A method of forming an array of pointed structures comprises depositing a ferrofluid on a substrate, applying a magnetic field to the ferrofluid to generate an array of surface protrusions, and solidifying the surface protrusions to form the array of pointed structures. The pointed structures may have a tip radius ranging from approximately 10 nm to approximately 25 micron. Solidifying the surface protrusions may be carried out at a temperature ranging from approximately 10 degrees C. to approximately 30 degrees C.

Correlation of plume dynamics and oxygen pressure with VO2 stoichiometry during pulsed laser deposition

NASA Astrophysics Data System (ADS)

Lafane, S.; Kerdja, T.; Abdelli-Messaci, S.; Khereddine, Y.; Kechouane, M.; Nemraoui, O.

2013-07-01

Vanadium dioxide thin films have been deposited on Corning glass substrates by a KrF laser ablation of V2O5 target at the laser fluence of 2 J cm-2. The substrate temperature and the target-substrate distance were set to 500 ∘C and 4 cm, respectively. X-ray diffraction analysis showed that pure VO2 is only obtained at an oxygen pressure range of 4×10-3-2×10-2 mbar. A higher optical switching contrast was obtained for the VO2 films deposited at 4×10-3-10-2 mbar. The films properties were correlated to the plume-oxygen gas interaction monitored by fast imaging of the plume.

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

NASA Astrophysics Data System (ADS)

Kusano, E.; Theil, J. A.; Thornton, John A.

1988-06-01

It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates

NASA Astrophysics Data System (ADS)

El Kazzi, S.; Mortelmans, W.; Nuytten, T.; Meersschaut, J.; Carolan, P.; Landeloos, L.; Conard, T.; Radu, I.; Heyns, M.; Merckling, C.

2018-04-01

We present in this paper the use of Gas Source Molecular Beam Epitaxy for the large-scale growth of transition metal dichalcogenides. Fiber-textured MoS2 co-deposited thin films (down to 1 MLs) are grown on commercially 200 mm wafer size templates where MX2 crystalline layers are achieved at temperatures ranging from RT to 550 °C. Raman Spectroscopy and photoluminescence measurements along with X-Ray Photoelectron Spectroscopy show that a low growth rate is essential for complete Mo sulfurization during MoS2 co-deposition. Finally, cross-section Transmission Electron Microscopy investigations are discussed to highlight the influence of SiO2 and Al2O3 used surfaces on MoS2 deposition.

Characterization of ALD grown TixAlyN and TixAlyC thin films

NASA Astrophysics Data System (ADS)

Kinnunen, S. A.; Malm, J.; Arstila, K.; Lahtinen, M.; Sajavaara, T.

2017-09-01

Atomic layer deposition (ALD) was used to grow TixAlyN and TixAlyC thin films using trimethylaluminum (TMA), titanium tetrachloride and ammonia as precursors. Deposition temperature was varied between 325 °C and 500 °C. Films were also annealed in vacuum and N2-atmosphere at 600-1000 °C. Wide range of characterization methods was used including time-of-flight elastic recoil detection analysis (ToF-ERDA), X-ray diffractometry (XRD), X-ray reflectometry (XRR), Raman spectroscopy, ellipsometry, helium ion microscopy (HIM), atomic force microscopy (AFM) and 4-point probe measurement for resistivity. Deposited films were roughly 100 nm thick and contained mainly desired elements. Carbon, chlorine and hydrogen were found to be the main impurities.

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

NASA Technical Reports Server (NTRS)

Kusano, E.; Theil, J. A.; Thornton, John A.

1988-01-01

It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

Effect of heat treatment on phase composition and crystal structure of thin WSi2 films on silicon substrates

NASA Astrophysics Data System (ADS)

Biryukov, Y. P.; Dostanko, A. P.; Maltsev, A. A.; Shakhlevich, G. M.

1984-10-01

An experimental study of WSi2 films on silicon substrates with either 111 or 100 orientation was made, for the purpose of determining the effect of annealing by heat treatment on their phase composition and crystal structure. Films of 0.2 micron thickness were deposited at a rate of 0.5 nm/s on a silicon surface which was predecontaminated of SiO2 layers and adsorbate atoms by ion sputtering in one vacuum cycle. Deposition was by condensation, with the substrate held at various temperatures from 390 to 500 C, and then annealed in an argon atmosphere at various temperatures from 700 to 1000 C for 30 min. Subsequent phase analysis at room temperature was performed with a DRON-2 X-ray diffractometer, using a CuK (sub alpha)-radiation source and covering the 20 = 10 to 130 deg range of angles by the Debye-Sherer method, while the surface morphology was examined under an electron microscope.

Examining the Magnetic Properties of LaCoO3 Thin Films Using Magnetic Force Microscopy

NASA Astrophysics Data System (ADS)

Berg, Morgann; Posadas, Agham; de Lozanne, Alex; Demkov, Alexander

2011-03-01

In contrast to the non-magnetic ground state of bulk LaCo O3 (LCO) at low temperatures, ferromagnetism has been observed in elastically strained thin film specimens. The origins of ferromagnetism in strained LCO thin films have been obscured by conflicting experimental results. Pulsed laser deposition (PLD) is the current standard of preparation techniques used to grow thin films of LCO, but results from thin film LCO samples prepared by PLD have been questioned on the basis of chemical inhomogeneity and film defects. Using magnetic force microscopy, we investigate the microscale magnetic properties of strained thin films of LCO prepared by molecular beam epitaxy and deposited on lanthanum aluminate and strontium titanate substrates. We observe these properties across a temperature range surrounding the Curie temperature (Tc ~ 80 K) and compare our results to global magnetic characteristics of these films as measured by a SQUID magnetometer. Supported by NSF-DMR and NSF-IGERT.

Growth process optimization of ZnO thin film using atomic layer deposition

NASA Astrophysics Data System (ADS)

Weng, Binbin; Wang, Jingyu; Larson, Preston; Liu, Yingtao

2016-12-01

The work reports experimental studies of ZnO thin films grown on Si(100) wafers using a customized thermal atomic layer deposition. The impact of growth parameters including H2O/DiethylZinc (DEZn) dose ratio, background pressure, and temperature are investigated. The imaging results of scanning electron microscopy and atomic force microscopy reveal that the dose ratio is critical to the surface morphology. To achieve high uniformity, the H2O dose amount needs to be at least twice that of DEZn per each cycle. If the background pressure drops below 400 mTorr, a large amount of nanoflower-like ZnO grains would emerge and increase surface roughness significantly. In addition, the growth temperature range between 200 °C and 250 °C is found to be the optimal growth window. And the crystal structures and orientations are also strongly correlated to the temperature as proved by electron back-scattering diffraction and x-ray diffraction results.

High temperature reaction between sea salt deposit and (U,Zr)O2 simulated corium debris

NASA Astrophysics Data System (ADS)

Takano, Masahide; Nishi, Tsuyoshi

2013-11-01

In order to clarify the possible impacts of seawater injection on the chemical and physical state of the corium debris formed in the severe accident at Fukushima Daiichi Nuclear Power Plants, the high temperature reaction between sea salt deposit and (U,Zr)O2 simulated corium debris (sim-debris) was examined in the temperature range from 1088 to 1668 K. A dense layer of calcium and sodium uranate formed on the surface of a sim-debris pellet at 1275 K under airflow, with the thickness of over 50 μm. When the oxygen partial pressure is low, calcium is likely to dissolve into the cubic sim-debris phase to form solid solution (Ca,U,Zr)O2+x. The diffusion depth was 5-6 μm from the surface, subjected to 1275 K for 12 h. The crystalline MgO remains affixed on the surface as the main residue of salt components. A part of it can also dissolve into the sim-debris.

Analysis of the Temperature Dependence of the Capacitance-Voltage and Conductance-Voltage Characteristics of Au/TiO2(rutile)/ n-Si Structures

NASA Astrophysics Data System (ADS)

KInacI, BarIş; Özçelik, Süleyman

2013-06-01

The capacitance-voltage-temperature ( C- V- T) and the conductance/angular frequency-voltage-temperature ( G/ω- V- T) characteristics of Au/TiO2(rutile)/ n-Si Schottky barrier diodes (SBDs) were investigated over the temperature range from 200 K to 380 K by considering the series resistance effect. Titanium dioxide (TiO2) was deposited on n-type silicon (Si) substrate using a direct-current (DC) magnetron sputtering system at 200°C. To improve the crystal quality, the deposited film was annealed at 900°C to promote a phase transition from the amorphous to rutile phase. The C -2 versus V plots gave a straight line in the reverse-bias region. The main electrical parameters, such as the doping concentration ( N D), Fermi energy level ( E F), depletion layer width ( W D), barrier height ( ф CV), and series resistance ( R S), of Au/TiO2(rutile)/ n-Si SBDs were calculated from the C- V- T and the G/ω- V- T characteristics. The obtained results show that ф CV, R S, and W D values decrease, while E F and N D values increase, with increasing temperature.

1/f noise in titanium doped aluminum thin film deposited by electron beam evaporation method and its dependence on structural variation with temperature

NASA Astrophysics Data System (ADS)

Ananda, P.; Vedanayakam, S. Victor; Thyagarajan, K.; Nandakumar, N.

2018-05-01

A brief review of Titanium doped Aluminum film has many attractive properties such as thermal properties and 1/f noise is highlighted. The thin film devices of Titanium doped alluminium are specially used in aerospace technology, automotive, biomedical fields also in microelectronics. In this paper, we discus on 1/f noise and nonlinear effects in titanium doped alluminium thin films deposited on glass substrate using electron beam evaporation for different current densities on varying temperatures of the film. The plots are dawn for 1/f noise of the films at different temperatures ranging from 300°C to 450°C and the slopes are determined. The studies shows a higher order increment in FFT amplitude of low frequency 1/f noise in thin films at annealing temperature 400°C. In this technology used in aerospace has been the major field of application of titanium doped alluminium, being one of the major challenges of the development of new alloys with improved strength at high temperature, wide chord Titanium doped alluminium fan blades increases the efficiency while reducing 1/f noise. Structural properties of XRD is identified.

Geothermal resources of the northern gulf of Mexico basin

USGS Publications Warehouse

Jones, P.H.

1970-01-01

Published geothermal gradient maps for the northern Gulf of Mexico basin indicate little or no potential for the development of geothermal resources. Results of deep drilling, from 4000 to 7000 meters or more, during the past decade however, define very sharp increases in geothermal gradient which are associated with the occurrence of abnormally high interstitial fluid pressure (geopressure). Bounded by regional growth faults along the landward margin of the Gulf Basin, the geopressured zone extends some 1300 km from the Rio Grande (at the boundary between the United States and Mexico) to the mouth of the Mississippi river. Gulfward, it extends to an unknown distance across the Continental Shelf. Within geopressured deposits, geothermal gradients range upwards to 100 ??C/km, being greatest within and immediately below the depth interval in which the maximum pressure gradient change occurs. The 120 ??C isogeotherm ranges from about 2500 to 5000 m below sea level, and conforms in a general way with depth of occurrence of the top of the geopressured zone. Measured geostatic ratios range upward to 0.97; the maximum observed temperature is 273 ??C, at a depth of 5859 m. Dehydration of montmorillonite, which comprises 60 to 80 percent of clay deposited in the northern Gulf Basin during the Neogene, occurs at depths where temperature exceeds about 80 ??C, and is generally complete at depths where temperature exceeds 120 ??C. This process converts intracrystalline and bound water to free pore water, the volume produced being roughly equivalent to half the volume of montmorillonite so altered. Produced water is fresh, and has low viscosity and density. Sand-bed aquifers of deltaic, longshore, or marine origin form excellent avenues for drainage of geopressured deposits by wells, each of which may yield 10,000 m3 or more of superheated water per day from reservoirs having pressures up to 1000 bars at depths greater than 5000 m. ?? 1971.

Deposition of steeply infalling debris - pebbles, boulders, snowballs, asteroids, comets - around stars

NASA Astrophysics Data System (ADS)

Brown, J. C.; Veras, D.; Gänsicke, B. T.

2017-09-01

When Comet Lovejoy plunged into the Sun, and survived, questions arose about the physics of infall of small bodies. [1,2] has already described this infall in detail. However, a more general analysis for any type of star has been missing. [3] generalized previous studies, with specific applications to white dwarfs. High-metallicity pollution is common in white dwarf stars hosting remnant planetary systems. However, they rarely have detectable debris accretion discs, possibly because much of the influx is fast steeply infalling debris in star-grazing orbits, producing a more tenuous signature than a slowly accreting disc. Processes governing such deposition between the Roche radius and photosphere have so far received little attention and we model them here analytically by extending recent work on sun-grazing comets to white dwarf systems. We find that the evolution of cm-to-km size infallers most strongly depends on two combinations of parameters, which effectively measure sublimation rate and binding strength. We then provide an algorithm to determine the fate of infallers for any white dwarf, and apply the algorithm to four limiting combinations of hot versus cool (young/old) white dwarfs with snowy (weak, volatile) versus rocky (strong, refractory) infallers. We find: (i) Total sublimation above the photosphere befalls all small infallers across the entire white dwarf temperature range, the threshold size rising with it and 100× larger for rock than snow. (ii) All very large objects fragment tidally regardless of temperature: for rock, a0 ≽ 105 cm; for snow, a0 ≽ 103 - 3 × 104 cm across all white dwarf cooling ages. (iii) A considerable range of infaller sizes avoids fragmentation and total sublimation, yielding impacts or grazes with cold white dwarfs. This range rapidly narrows with increasing temperature, especially for snowy bodies. Finally, we briefly discuss how the various forms of deposited debris may finally reach the photosphere surface itself.

Perovskite LaBaCo2O5+δ (LBCO) single-crystal thin films for pressure sensing applications

NASA Astrophysics Data System (ADS)

Ma, Y. J.; Xiao, J. Y.; Zhang, Q. Y.; Ma, C. Y.; Jiang, X. N.; Wu, B. Y.; Zeng, X. Y.

2018-04-01

Perovskite LaBaCo2O5+δ (LBCO) single-crystal films were deposited on (001) MgO substrates by a magnetron sputtering method and processed into Pirani sensors for investigation of pressure measurements. In comparison to the poly-crystal film deposited under the same condition, the single-crystal LBCO films exhibited rather a large temperature coefficient of resistance and a high sensitivity in response to pressure. The LBCO sensors with dimensions of 30 to 200 μm, which are different from resistor-on-dielectric membrane or micro-beam structures, demonstrated to be capable of making response to the pressures ranging from 5 × 10-2 to 105 Pa with a real dynamic range of 3 to 2 × 103 Pa.

Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Rauwel, E.; Dubourdieu, C.; Holländer, B.; Rochat, N.; Ducroquet, F.; Rossell, M. D.; Van Tendeloo, G.; Pelissier, B.

2006-07-01

Addition of yttrium in HfO2 thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range (2.0-99.5at.%). The cubic structure of HfO2 is stabilized for 6.5at.%. The permittivity is maximum for yttrium content of 6.5-10at.%; in this range, the effective permittivity, which results from the contribution of both the cubic phase and silicate phase, is of 22. These films exhibit low leakage current density (5×10-7A /cm2 at -1V for a 6.4nm film). The cubic phase is stable upon postdeposition high temperature annealing at 900°C under NH3.

Atomic force microscopy of hydrated phosphatidylethanolamine bilayers.

PubMed Central

Zasadzinski, J A; Helm, C A; Longo, M L; Weisenhorn, A L; Gould, S A; Hansma, P K

1991-01-01

We present images of the polar or headgroup regions of bilayers of dimyristoyl-phosphatidylethanolamine (DMPE), deposited by Langmuir-Blodgett deposition onto mica substrates at high surface pressures and imaged under water at room temperature with the optical lever atomic force microscope. The lattice structure of DMPE is visualized with sufficient resolution that the location of individual headgroups can be determined. The forces are sufficiently small that the same area can be repeatedly imaged with a minimum of damage. The DMPE molecules in the bilayer appear to have relatively good long-range orientational order, but rather short-range and poor positional order. These results are in good agreement with x-ray measurements of unsupported lipid monolayers on the water surface, and with electron diffraction of adsorbed monolayers. Images FIGURE 1 FIGURE 2 PMID:2049529

Luminescent high temperature sensor based on the CdSe/ZnS quantum dot thin film

NASA Astrophysics Data System (ADS)

Wang, He-lin; Yang, Ai-jun; Sui, Cheng-hua

2013-11-01

A high temperature sensor based on the multi-parameter temperature dependent characteristic of photoluminescence (PL) of quantum dot (QD) thin film is demonstrated by depositing the CdSe/ZnS core/shell QDs on the SiO2 glass substrates. The variations of the intensity, the peak wavelength and the full width at half maximum (FWHM) of PL spectra with temperature are studied experimentally and theoretically. The results indicate that the peak wavelength of the PL spectra changes linearly with temperature, while the PL intensity and FWHM vary exponentially for the temperature range from 30 °C to 180 °C. Using the obtained temperature dependent optical parameters, the resolution of the designed sensor can reach 0.1 nm/°C.

Molten salt corrosion of heat resisting alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wong-Moreno, A.; Salgado, R.I.M.; Martinez, L.

1995-09-01

This paper is devoted to the study of the corrosion behavior of eight high chromium alloys exposed to three different oil ash deposits with V/(Na+S) atomic ratios 0.58, 2.05 and 13.43, respectively. The alloys were exposed to ash deposits at 750 and 900 C; in this temperature range some deposit constituents have reached their melting point developing a molten salt corrosion process. The group of alloys tested included four Fe-Cr-Ni steels UNS specifications S304000, S31000, N08810 and N08330; two Fe-Cr alloys, UNS S44600 and alloy MA 956; and two Ni-base alloys, UNS N06333 and UNS N06601. The deposits and themore » exposed surfaces were characterized by chemical analysis, XRD, DTA, SEM and x-ray microanalysis. The oil-ash corrosion resistance of alloys is discussed in terms of the characteristics of corrosion product scales, which are determined by interaction between the alloy and the corrosive environment. All the alloys containing nickel exhibited sulfidation when were exposed at 750 C, but at 900 C only those without aluminum presented sulfidation or sulfidation and oxidation, while the alloys containing aluminum only exhibited internal oxidation. In spite of good resistance to corrosion by oil-ash deposits, 446-type alloy might not be suitable for temperatures higher than 750 C because of embrittlement caused by excessive sigma-phase precipitation. Alloy MA956 showed highest corrosion resistance at 900 C to oil-ash deposits with high vanadium content.« less

Epitaxial growth of 6H silicon carbide in the temperature range 1320 C to 1390 C

NASA Technical Reports Server (NTRS)

Will, H. A.; Powell, J. A.

1974-01-01

High-quality epitaxial layers of 6H SiC have been grown on 6H SiC substrates with the grown direction perpendicular to the crystal c-axis. The growth was by chemical vapor deposition from methyltrichlorosilane (CH3SiCl3) in hydrogen at temperatures in the range of 1320 to 1390 C. Epitaxial layers up to 80 microns thick were grown at rates of 0.4 microns/min. Attempts at growth on the (0001) plane of 6H SiC substrates under similar conditions resulted in polycrystalline cubic SiC layers. Optical and X-ray diffraction techniques were used to characterize the grown layers.

Modeling hot spring chemistries with applications to martian silica formation

NASA Astrophysics Data System (ADS)

Marion, G. M.; Catling, D. C.; Crowley, J. K.; Kargel, J. S.

2011-04-01

Many recent studies have implicated hydrothermal systems as the origin of martian minerals across a wide range of martian sites. Particular support for hydrothermal systems include silica (SiO 2) deposits, in some cases >90% silica, in the Gusev Crater region, especially in the Columbia Hills and at Home Plate. We have developed a model called CHEMCHAU that can be used up to 100 °C to simulate hot springs associated with hydrothermal systems. The model was partially derived from FREZCHEM, which is a colder temperature model parameterized for broad ranges of temperature (<-70 to 25 °C), pressure (1-1000 bars), and chemical composition. We demonstrate the validity of Pitzer parameters, volumetric parameters, and equilibrium constants in the CHEMCHAU model for the Na-K-Mg-Ca-H-Cl-ClO 4-SO 4-OH-HCO 3-CO 3-CO 2-O 2-CH 4-Si-H 2O system up to 100 °C and apply the model to hot springs and silica deposits. A theoretical simulation of silica and calcite equilibrium shows how calcite is least soluble with high pH and high temperatures, while silica behaves oppositely. Such influences imply that differences in temperature and pH on Mars could lead to very distinct mineral assemblages. Using measured solution chemistries of Yellowstone hot springs and Icelandic hot springs, we simulate salts formed during the evaporation of two low pH cases (high and low temperatures) and a high temperature, alkaline (high pH) sodic water. Simulation of an acid-sulfate case leads to precipitation of Fe and Al minerals along with silica. Consistency with martian mineral assemblages suggests that hot, acidic sulfate solutions are plausibility progenitors of minerals in the past on Mars. In the alkaline pH (8.45) simulation, formation of silica at high temperatures (355 K) led to precipitation of anhydrous minerals (CaSO 4, Na 2SO 4) that was also the case for the high temperature (353 K) low pH case where anhydrous minerals (NaCl, CaSO 4) also precipitated. Thus we predict that secondary minerals associated with massive silica deposits are plausible indicators on Mars of precipitation environments and aqueous chemistry. Theoretical model calculations are in reasonable agreement with independent experimental silica concentrations, which strengthens the validity of the new CHEMCHAU model.

Modeling hot spring chemistries with applications to martian silica formation

USGS Publications Warehouse

Marion, G.M.; Catling, D.C.; Crowley, J.K.; Kargel, J.S.

2011-01-01

Many recent studies have implicated hydrothermal systems as the origin of martian minerals across a wide range of martian sites. Particular support for hydrothermal systems include silica (SiO2) deposits, in some cases >90% silica, in the Gusev Crater region, especially in the Columbia Hills and at Home Plate. We have developed a model called CHEMCHAU that can be used up to 100??C to simulate hot springs associated with hydrothermal systems. The model was partially derived from FREZCHEM, which is a colder temperature model parameterized for broad ranges of temperature (<-70 to 25??C), pressure (1-1000 bars), and chemical composition. We demonstrate the validity of Pitzer parameters, volumetric parameters, and equilibrium constants in the CHEMCHAU model for the Na-K-Mg-Ca-H-Cl-ClO4-SO4-OH-HCO3-CO3-CO2-O2-CH4-Si-H2O system up to 100??C and apply the model to hot springs and silica deposits.A theoretical simulation of silica and calcite equilibrium shows how calcite is least soluble with high pH and high temperatures, while silica behaves oppositely. Such influences imply that differences in temperature and pH on Mars could lead to very distinct mineral assemblages. Using measured solution chemistries of Yellowstone hot springs and Icelandic hot springs, we simulate salts formed during the evaporation of two low pH cases (high and low temperatures) and a high temperature, alkaline (high pH) sodic water. Simulation of an acid-sulfate case leads to precipitation of Fe and Al minerals along with silica. Consistency with martian mineral assemblages suggests that hot, acidic sulfate solutions are plausibility progenitors of minerals in the past on Mars. In the alkaline pH (8.45) simulation, formation of silica at high temperatures (355K) led to precipitation of anhydrous minerals (CaSO4, Na2SO4) that was also the case for the high temperature (353K) low pH case where anhydrous minerals (NaCl, CaSO4) also precipitated. Thus we predict that secondary minerals associated with massive silica deposits are plausible indicators on Mars of precipitation environments and aqueous chemistry. Theoretical model calculations are in reasonable agreement with independent experimental silica concentrations, which strengthens the validity of the new CHEMCHAU model. ?? 2011 Elsevier Inc.

"Sour gas" hydrothermal jarosite: Ancient to modern acid-sulfate mineralization in the southern Rio Grande Rift

USGS Publications Warehouse

Lueth, V.W.; Rye, R.O.; Peters, L.

2005-01-01

As many as 29 mining districts along the Rio Grande Rift in southern New Mexico contain Rio Grande Rift-type (RGR) deposits consisting of fluorite-barite??sulfide-jarosite, and additional RGR deposits occur to the south in the Basin and Range province near Chihuahua, Mexico. Jarosite occurs in many of these deposits as a late-stage hydrothermal mineral coprecipitated with fluorite, or in veinlets that crosscut barite. In these deposits, many of which are limestone-hosted, jarosite is followed by natrojarosite and is nested within silicified or argillized wallrock and a sequence of fluorite-barite??sulfide and late hematite-gypsum. These deposits range in age from ???10 to 0.4 Ma on the basis of 40Ar/39Ar dating of jarosite. There is a crude north-south distribution of ages, with older deposits concentrated toward the south. Recent deposits also occur in the south, but are confined to the central axis of the rift and are associated with modern geothermal systems. The duration of hydrothermal jarosite mineralization in one of the deposits was approximately 1.0 my. Most ??18OSO4-OH values indicate that jarosite precipitated between 80 and 240 ??C, which is consistent with the range of filling temperatures of fluid inclusions in late fluorite throughout the rift, and in jarosite (180 ??C) from Pen??a Blanca, Chihuahua, Mexico. These temperatures, along with mineral occurrence, require that the jarosite have had a hydrothermal origin in a shallow steam-heated environment wherein the low pH necessary for the precipitation of jarosite was achieved by the oxidation of H2S derived from deeper hydrothermal fluids. The jarosite also has high trace-element contents (notably As and F), and the jarosite parental fluids have calculated isotopic signatures similar to those of modern geothermal waters along the southern rift; isotopic values range from those typical of meteoric water to those of deep brine that has been shown to form from the dissolution of Permian evaporite by deeply circulating meteoric water. Jarosite ??34S values range from -24??? to 5???, overlapping the values for barite and gypsum at the high end of the range and for sulfides at the low end. Most ??34S values for barite are 10.6??? to 13.1???, and many ??34S values for gypsum range from 13.1??? to 13.9??? indicating that a component of aqueous sulfate was derived from Permian evaporites (??34 S=12??2???). The requisite H2SO4 for jarosite formation was derived from oxidation of H2S which was likely largely sour gas derived from the thermochemical reduction of Permian sulfate. The low ??34S values for the precursor H2S probably resulted from exchange deeper in the basin with the more abundant Permian SO42- at ???150 to 200 ??C. Jarosite formed at shallow levels after the pH buffering capacity of the host rock (typically limestone) was neutralized by precipitation of earlier minerals. Some limestone-hosted deposits contain caves that may have been caused by the low pH of the deep basin fluids due to the addition of deep-seated HF and other magmatic gases during periods of renewed rifting. Caves in other deposits may be due to sulfuric acid speleogenesis as a result of H2S incursion into oxygenated groundwaters. The isotopic data in these "sour gas" jarosite occurrences encode a record of episodic tectonic or hydrologic processes that have operated in the rift over the last 10 my. ?? 2004 Elsevier B.V. All rights reserved.

Basaltic ignimbrites in monogenetic volcanism: the example of La Garrotxa volcanic field

NASA Astrophysics Data System (ADS)

Martí, J.; Planagumà, L. l.; Geyer, A.; Aguirre-Díaz, G.; Pedrazzi, D.; Bolós, X.

2017-05-01

Ignimbrites are pyroclastic density current deposits common in explosive volcanism involving intermediate and silicic magmas and in less abundance in eruptions of basaltic central and shield volcanoes. However, they are not widely described in association with monogenetic volcanism, where typical products include lava flows, scoria and lapilli fall deposits, as well as various kinds of pyroclastic density current deposits and explosion breccias. In La Garrotxa basaltic monogenetic volcanic field, part of the Neogene-Quaternary European rift system located in the northeast of the Iberian Peninsula, we have identified a particular group of pyroclastic density current deposits that show similar textural characteristics to silicic ignimbrites, indicating an overlap in transport and depositional processes. These deposits can be clearly distinguished from other pyroclastic density current deposits generated during phreatomagmatic phases that typically correspond to thinly laminated units with planar-to-cross-bedded stratification. The monogenetic ignimbrite deposits correspond to a few meters to several tens of meters thick units rich in lithic- and lapilli scoria fragments, with an abundant ash matrix, and internally massive structure, emplaced along valleys and gullies, with run-out distances up to 6 km and individual volumes ranging from 106 to 1.5 × 107 m3. The presence of flattened scoria and columnar jointing in some of these deposits suggests relatively high emplacement temperatures, coinciding with available paleomagnetic data that suggests an emplacement temperature around 450-500 °C. In this work, we describe the main characteristics of these pyroclastic deposits that were generated by a number of phreatomagmatic episodes. Comparison with similar deposits from silicic eruptions and previous examples of ignimbrites associated with basaltic volcanism allows us to classify them as `basaltic ignimbrites'. The recognition in monogenetic volcanism of such pyroclastic products, which may extend several kilometres from source, has an important consequence for hazard assessment in these volcanic fields, which previously have been considered to present only minor hazards and risks.

Effects of dew deposition on transpiration and carbon uptake in leaves

NASA Astrophysics Data System (ADS)

Gerlein-Safdi, C.; Koohafkan, M.; Chung, M.; Rockwell, F. E.; Thompson, S. E.; Caylor, K. K.

2017-12-01

Dew deposition occurs in ecosystems worldwide, even in the driest deserts and in times of drought. Although some species absorb dew water directly via foliar uptake, a ubiquitous effect of dew on plant water balance is the interference of dew droplets with the leaf energy balance, which increases leaf albedo and emissivity and decreases leaf temperature through dew evaporation. Dew deposition frequency and amount are expected to be affected by changing environmental conditions, with unknown consequences for plant water stress and ecosystem carbon, water and energy fluxes. Here we present a simple leaf energy balance that characterizes the effect of deposition and the evaporation of dew on leaf energy balance, transpiration, and carbon uptake. The model is driven by five common meteorological variables and shows very good agreement with leaf wetness sensor data from the Blue Oak Ranch Reserve in California. We explore the tradeoffs between energy, water, and carbon balances for leaves of different sizes across a range of relative humidity, wind speed, and air temperature conditions. Our results show significant water savings from transpiration suppression up to 30% for leaf characteristic lengths of 50 cm due to the decrease in leaf temperature. C. 25% of water savings from transpiration suppression in smaller leaves arise from the effect of dew droplets on leaf albedo. CO2 assimilation is decreased by up to 15% by the presence of dew, except for bigger leaves in windspeed conditions below 1 m/s when an increase in assimilation is expected.

Mixed fuel strategy for carbon deposition mitigation in solid oxide fuel cells at intermediate temperatures.

PubMed

Su, Chao; Chen, Yubo; Wang, Wei; Ran, Ran; Shao, Zongping; Diniz da Costa, João C; Liu, Shaomin

2014-06-17

In this study, we propose and experimentally verified that methane and formic acid mixed fuel can be employed to sustain solid oxide fuel cells (SOFCs) to deliver high power outputs at intermediate temperatures and simultaneously reduce the coke formation over the anode catalyst. In this SOFC system, methane itself was one part of the fuel, but it also played as the carrier gas to deliver the formic acid to reach the anode chamber. On the other hand, the products from the thermal decomposition of formic acid helped to reduce the carbon deposition from methane cracking. In order to clarify the reaction pathways for carbon formation and elimination occurring in the anode chamber during the SOFC operation, O2-TPO and SEM analysis were carried out together with the theoretical calculation. Electrochemical tests demonstrated that stable and high power output at an intermediate temperature range was well-maintained with a peak power density of 1061 mW cm(-2) at 750 °C. With the synergic functions provided by the mixed fuel, the SOFC was running for 3 days without any sign of cell performance decay. In sharp contrast, fuelled by pure methane and tested at similar conditions, the SOFC immediately failed after running for only 30 min due to significant carbon deposition. This work opens a new way for SOFC to conquer the annoying problem of carbon deposition just by properly selecting the fuel components to realize their synergic effects.

Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Maia da Costa, M. E. H.; Baumvol, I. J. R.; Radke, C.; Jacobsohn, L. G.; Zamora, R. R. M.; Freire, F. L.

2004-11-01

Hard amorphous fluorinated carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition were annealed in vacuum for 30 min in the temperature range of 200-600 °C. The structural and compositional modifications were followed by several analytical techniques: Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Nanoidentation measurements and lateral force microscopy experiments were carried out in order to provide the film hardness and the friction coefficient, respectively. The internal stress and contact angle were also measured. RBS, ERDA, and XPS results indicate that both fluorine and hydrogen losses occur for annealing temperatures higher than 300 °C. Raman spectroscopy shows a progressive graphitization upon annealing, while the surface became slightly more hydrophobic as revealed by the increase of the contact angle. Following the surface wettability reduction, a decrease of the friction coefficient was observed. These results highlight the influence of the capillary condensation on the nanoscale friction. The film hardness and the internal stress are constant up to 300 °C and decrease for higher annealing temperatures, showing a direct correlation with the atomic density of the films. Since the thickness variation is negligible, the mass loss upon thermal treatment results in amorphous structures with a lower degree of cross-linking, explaining the deterioration of the mechanical properties of the a-C:F films.

Polymer Deposition from a Quasi-Vapor Phase as a New Route to Access a Wide Temperature Range for Crystallization

NASA Astrophysics Data System (ADS)

Jeong, Hyuncheol; Arnold, Craig; Priestley, Rodney

Polymer crystallization is strongly governed by kinetics where crystallization temperature (Tc) plays an important role in determining materials properties. Due to the high entropic barrier required for reorganization, the long-chain molecules typically form folded-chain crystals, whose thickness and thermal stability decrease as Tc is lowered. Interesting questions remain regarding crystallization in the deeply supercooled regime. This is partially due to the difficulty in accessing the low Tc range without nucleation. For a strong crystal-former like polyethylene (PE), cooling from a melt or solution always confronts the onset of nucleation at a high Tc followed by rapid crystal growth. Here, we introduce an alternative approach to grow polymer crystals via Matrix Assisted Pulsed Laser Evaporation (MAPLE). This methodology achieves the crystallization of polymers from a quasi-vapor phase at a controlled temperature, allowing for the study of the empirical relationship between Tc and crystal structure over a wide range of Tc. With PE as a model polymer, we investigated the morphological and thermal properties of crystals grown over a wide temperature range down to 120 °C below bulk crystallization point.

Fundamental modeling the performance and degradation of HEV Lithium-ion battery

NASA Astrophysics Data System (ADS)

Fang, Weifang

Li-ion battery is now replacing nickel-metal hydride (NiMH) for hybrid electric vehicles (HEV). The advantages of Li-ion battery over NiMH are that it can provide longer life, higher cell voltage and higher energy density, etc. However, there are still some issues unsolved for Li-ion battery to fully satisfy the HEV requirement. At high temperature, thermal runaway may cause safety issues. At low temperature, however, its performance is dramatically reduced and also Li deposition may occur. Furthermore, degradation due to side reactions in the electrodes during cycling and storage results in capacity loss and impedance rise. An electrochemical-thermal coupled model is first used to predict performance of individual electrodes of Li-ion cells under HEV conditions that encompass a wide range of ambient temperatures. The model is validated against experimental data of not only the full cell but also individual electrodes and then used to study lithium deposition on the negative electrode during charging Li-ion battery at subzero temperature. The simulated property evolution, e.g. Li concentrations in electrode and electrolyte, shows that either low temperature or high charge rate may force Li insertion (into the negative carbon electrode) to occur in a narrow region near the separator. Therefore, Li deposition is mostly like to happen in this location. Modeling simulation shows that reduction of the negative electrode particle size can reduce Li deposition, which has same effect as improvement of the Li diffusion coefficient in the negative electrode. The model is also used to study charge protocols at subzero temperature. Model simulation shows that employing pulse current can improve cell temperature by the heat generated inside the cell, thus this designed charge protocol is able to reduce Li deposition and improve the charge efficiency as well. Individual aging mechanism is then implemented into each electrode to study Li-ion battery degradation during accelerated aging tests. The experimentally observed aging phenomena are interpreted using the degradation model. The simulated results show that the positive electrode active material loss is the main cause of capacity loss and impedance growth. And this is the key step for a model to well catch the experimentally observed aging phenomena in the two electrodes. In the future work, the degradation model will further help to prolong battery life through engineering and optimization in HEV applications.

Effects of deposition temperature and ammonia flow on metal-organic chemical vapor deposition of hexagonal boron nitride

NASA Astrophysics Data System (ADS)

Rice, Anthony; Allerman, Andrew; Crawford, Mary; Beechem, Thomas; Ohta, Taisuke; Spataru, Catalin; Figiel, Jeffrey; Smith, Michael

2018-03-01

The use of metal-organic chemical vapor deposition at high temperature is investigated as a means to produce epitaxial hexagonal boron nitride (hBN) at the wafer scale. Several categories of hBN films were found to exist based upon precursor flows and deposition temperature. Low, intermediate, and high NH3 flow regimes were found to lead to fundamentally different deposition behaviors. The low NH3 flow regimes yielded discolored films of boron sub-nitride. The intermediate NH3 flow regime yielded stoichiometric films that could be deposited as thick films. The high NH3 flow regime yielded self-limited deposition with thicknesses limited to a few mono-layers. A Langmuir-Hinshelwood mechanism is proposed to explain the onset of self-limited behavior for the high NH3 flow regime. Photoluminescence characterization determined that the intermediate and high NH3 flow regimes could be further divided into low and high temperature behaviors with a boundary at 1500 °C. Films deposited with both high NH3 flow and high temperature exhibited room temperature free exciton emission at 210 nm and 215.9 nm.

Pulsed-Plasma Physical Vapor Deposition Approach Toward the Facile Synthesis of Multilayer and Monolayer Graphene for Anticoagulation Applications.

PubMed

Vijayaraghavan, Rajani K; Gaman, Cezar; Jose, Bincy; McCoy, Anthony P; Cafolla, Tony; McNally, Patrick J; Daniels, Stephen

2016-02-01

We demonstrate the growth of multilayer and single-layer graphene on copper foil using bipolar pulsed direct current (DC) magnetron sputtering of a graphite target in pure argon atmosphere. Single-layer graphene (SG) and few-layer graphene (FLG) films are deposited at temperatures ranging from 700 °C to 920 °C within <30 min. We find that the deposition and post-deposition annealing temperatures influence the layer thickness and quality of the graphene films formed. The films were characterized using atomic force microscopy (AFM), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and optical transmission spectroscopy techniques. Based on the above studies, a diffusion-controlled mechanism was proposed for the graphene growth. A single-step whole blood assay was used to investigate the anticoagulant activity of graphene surfaces. Platelet adhesion, activation, and morphological changes on the graphene/glass surfaces, compared to bare glass, were analyzed using fluorescence microscopy and SEM techniques. We have found significant suppression of the platelet adhesion, activation, and aggregation on the graphene-covered surfaces, compared to the bare glass, indicating the anticoagulant activity of the deposited graphene films. Our production technique represents an industrially relevant method for the growth of SG and FLG for various applications including the biomedical field.

Electrical properties of Bi2Mg2/3Nb4/3O7 (BMN) pyrochlore thin films deposited on Pt and Cu metal at low temperatures for embedded capacitor applications

NASA Astrophysics Data System (ADS)

Xian, Cheng-Ji; Park, Jong-Hyun; Ahn, Kyung-Chan; Yoon, Soon-Gil; Lee, Jeong-Won; Kim, Woon-Chun; Lim, Sung-Taek; Sohn, Seung-Hyun; Moon, Jin-Seok; Jung, Hyung-Mi; Lee, Seung-Eun; Lee, In-Hyung; Chung, Yul-Kyo; Jeon, Min-Ku; Woo, Seong-Ihl

2007-01-01

200-nm-thick BMN films were deposited on Pt /TiO2/SiO2/Si and Cu /Ti/SiO2/Si substrates at various temperatures by pulsed laser deposition. The dielectric constant and capacitance density of the films deposited on Pt and Cu electrodes show similar tendency with increasing deposition temperature. On the other hand, dielectric loss of the films deposited on Cu electrode varies from 0.7% to 1.3%, while dielectric loss of films on Pt constantly shows 0.2% even though the deposition temperature increases. The low value of breakdown strength in BMN films on Pt compared to films deposited on Cu electrode was attributed to the increase of surface roughness by the formation of secondary phases at interface between BMN films and Pt electrodes.

Bn and Si-Doped Bn Coatings on Woven Fabrics

NASA Technical Reports Server (NTRS)

Hurwitz, Frances I.; Scott, John M.; Wheeler, Donald R.; Chayka, Paul V.; Gray, Hugh R. (Technical Monitor)

2002-01-01

A computer controlled, pulsed chemical vapor infiltration (CVI) system has been developed to deposit BN from a liquid borazine (B3N3H6) source, as well as silicon doped BN coatings using borazine and a silicon source, into 2-D woven ceramic fabric preforms. The coating process was evaluated as a function of deposition temperature, pressure, and precursor flow rate. Coatings were characterized by field emission scanning electron microscopy, electron dispersive spectroscopy and Auger spectroscopy. By controlling the reactant feed ratios, Si incorporation could be controlled over the range of 6-24 atomic percent.

Oxygen defect induced photoluminescence of HfO2 thin films

NASA Astrophysics Data System (ADS)

Ni, Jie; Zhou, Qin; Li, Zhengcao; Zhang, Zhengjun

2008-07-01

Amorphous HfO2 films prepared by e-beam deposition exhibited room-temperature photoluminescence (PL) in the visible range, i.e., at ˜620 and 700nm, due to oxygen vacancies involved during deposition. This PL can be enhanced by two orders in intensity by crystallizing the amorphous films in flowing argon, where a large amount of oxygen vacancies were introduced, and can be diminished by removal of the oxygen vacancies by annealing HfO2 films in oxygen. This study could help understand the defect-property relationship and provides ways to tune the PL property of HfO2 films.

Thermal Properties of the ESR Centres in Speleothem Samples

NASA Astrophysics Data System (ADS)

Ulusoy, Ü.; Anbar, Gül

2007-04-01

The paramagnetic centres used for ESR (Electron Spin Resonance) dating method should be thermally stable which is the main factor limiting the range of this method. In this work, thermal stabilities of the ESR centres in the cave deposites from the Aladaǧlar Massive and Alanya in Turkey has been investigated. The life times of the dating signal were calculated as about 4.0 and 3.7 years for G06 and G08 samples at the 10 °C depositing temperature. The activation energies of the centres are obtained the same, 0.7eV for both samples.

Semiconducting boron carbide thin films: Structure, processing, and diode applications

NASA Astrophysics Data System (ADS)

Bao, Ruqiang

The high energy density and long lifetime of betavoltaic devices make them very useful to provide the power for applications ranging from implantable cardiac pacemakers to deep space satellites and remote sensors. However, when made with conventional semiconductors, betavoltaic devices tend to suffer rapid degradation as a result of radiation damage. It has been suggested that the degradation problem could potentially be alleviated by replacing conventional semiconductors with a radiation hard semiconducting material like icosahedral boron carbide. The goal of my dissertation was to better understand the fundamental properties and structure of boron carbide thin films and to explore the processes to fabricate boron carbide based devices for voltaic applications. A pulsed laser deposition system and a radio frequency (RF) magnetron sputtering deposition system were designed and built to achieve the goals. After comparing the experimental results obtained using these two techniques, it was concluded that RF magnetron sputtering deposition technique is a good method to make B4C boron carbide thin films to fabricate repeatable and reproducible voltaic devices. The B4C thin films deposited by RF magnetron sputtering require in situ dry pre-cleaning to make ohmic contacts for B4C thin films to fabricate the devices. By adding another RF sputtering to pre-clean the substrate and thin films, a process to fabricate B4C / n-Si heterojunctions has been established. In addition, a low energy electron accelerator (LEEA) was built to mimic beta particles emitted from Pm147 and used to characterize the betavoltaic performance of betavoltaic devices as a function of beta energy and beta flux as well as do accelerated lifetime testing for betavoltaic devices. The energy range of LEEA is 20 - 250 keV with the current from several nA to 50 muA. High efficiency Si solar cells were used to demonstrate the powerful capabilities of LEEA, i.e., the characterization of betavoltaic performance and the accelerated lifetime test of betavoltaic devices. Structural analysis by X-ray diffraction and high resolution transmission electron microscopy showed that the prepared B4C thin films are amorphous. The presence of icosahedrons, which account for the radiation hardness of icosahedral boron rich solids, in the amorphous B4C thin films was supported by Fourier transform infrared spectroscopy. The pair distribution functions derived from selected area diffraction pattern of amorphous B 4C thin films showed that the short range order structure of amorphous B4C thin films is similar to beta-rhombohedral boron but with a shorter distance. The investigation of electrical properties of B4 C thin films showed that the resistivity of B4C thin films ranges from 695 O-cm to 9650 O-cm depending on the deposition temperature; the direct and indirect bandgaps for B4C thin films are 2.776 - 2.898 eV and 1.148 - 1.327 eV, respectively; the effective lifetime of excess charge carrier is close to 0.1 ms for B4C thin film deposited at room temperature and approximates to 1 ms for those deposited at 175 °C to 500 °C. Based on structural characterization and electrical properties of B4C thin films, a structural model of B4C thin films was proposed and supported by nanoindenter experiments, i.e., the hardness of thin films deposited at temperature in the range of 275 °C to 350 °C is lower than that of the films deposited at RT and 650 °C. Heterojunctions of B4C / n-Si (100) possessing photovoltaic response have been fabricated. The suitable deposition temperature for B 4C thin film to fabricate photovoltaic device is from 175 °C to 350 °C. When the Si substrate surface was not pre-cleaned before depositing B4C thin film, the B4C / n-Si (100) heterojunction has better photovoltaic responses, presumably because there were no sputter-produced defects on the surface of Si (100) substrate. Until now, the best achievable photovoltaic performance is B4C / n-Si (100) heterojunction with 200 nm thick B4C thin film when the Si (100) substrate surface was not pre-cleaned by RF sputtering. When this heterojunction was characterized using solar simulator with air mass 1.5 spectra, the short circuit current density is 1.484 mA/cm2, the open circuit voltage is about 0.389 V, and the power conversion efficiency is about 0.214 %. In addition, B5C thin films deposited by plasma enhanced chemical vapor deposition were used to make some of the devices studied in this dissertation. It was found that the Si-doped BC / n-Si (111) heterojunctions also demonstrates their photovoltaic and betavoltaic responses. Even after irradiated by a 120 keV electron beam to a fluence of 4.38x1017 electrons/cm 2, the heterojunctions still posses betavoltaic behavior and their responses to the incident irradiance density are similar to that before irradiation.

Genesis of the Sb-W-Au deposits at Ixtahuacan, Guatemala: evidence from fluid inclusions and stable isotopes

NASA Astrophysics Data System (ADS)

Guillemette, N.; Williams-Jones, A. E.

1993-06-01

The Ixtahuacan Sb-W deposits are hosted by upper Pennsylvanian to Permian metasedimentary rocks of the central Cordillera of Guatemala. The deposits consist of gold-bearing arsenopyrite, stibnite and scheelite. Arsenopyrite and scheelite are early in the paragenesis, occurring as disseminations in pyritiferous black shale/sandstone and in argillaceous limestone, respectively. Some stibnite is disseminated, but the bulk of the stibnite occurs as massive stratabound lenses in black shales and in quartz-ankerite veins and breccias, locally containing scheelite. Microthermometric measurements on fluid inclusions in quartz and scheelite point to a low temperature (160 190°C) and low to moderate salinity (5 15 wt% NaCl eq.) aqueous ore fluid. Abundant vapour-rich inclusions suggest that the fluid boiled. Carbon dioxide was produced locally as a result of interaction of the aqueous fluid with the argillaceous limestone. Bulk leaching experiments and SEM-EDS analyses of decrepitated fluid inclusion residues indicate that the ore-bearing solution was NaCl-dominated. The δ18O values of quartz, ankerite and scheelite from mineralized veins range from 19.7 to 20.5‰, 18.1 to 20.0‰ and 7.0 to 8.4‰ respectively. The average temperature calculated from quartz-scheelite oxygen isotopic fractionation is 170°C. The oxygen isotopic composition of the fluid, interpreted to have been in equilibrium with these minerals, ranged from 5.7 to 7.6‰, and is considered to represent an evolved meteoric water. Diagenetic or syngenetic pyrite has a sulphur isotopic composition of 0.5±0.3‰ which is consistent with bacterial reduction of sulphate. The δ34S values of arsenopyrite and stibnite range from -2.8 to 2.0‰ and -2.7 to -2.3‰ respectively, and are though to reflect sulphur derived from pyrite. The Ixtahuacan deposits are interpreted to have formed at low temperature (<200°C) and a depth of a few hundred metres from a low fO2 (10-49-10-57), high pH (7 8) fluid. Arsenic was probably transported as arsenious acid, antimony and gold as thio-complexes and tungsten as the complex HWO{4/-}. A model is proposed in which a meteoric fluid, heated by a felsic intrusion at depth, was focused to shallow levels along faults. The interaction of the fluid with pyritiferous beds caused the deposition of arsenopyrite as a result of sulphidation and/or decreasing fO2; gold probably co-precipitated with As or was adsorbed onto the arsenopyrite. The precipitation of stibnite was caused by boiling. Scheelite deposited in response to the increase in Ca2+ activity which accompanied interaction of the ore fluid with the argillaceous limestones.

Constitutive response of passivated copper films to thermal cycling

NASA Astrophysics Data System (ADS)

Shen, Y.-L.; Ramamurty, U.

2003-02-01

The thermomechanical behavior of passivated thin copper films is studied. Stresses in copper films of thickness ranging from 125 to 1000 nm, deposited on quartz or silicon substrates and passivated with silicon oxide, were measured using the curvature method. The thermal cycling spans a temperature range from -196 to 600 °C. The measured mechanical behavior was found to be rate insensitive within the heating/cooling rate range of 5-25 °C/min. It was observed that the passivated films do not exhibit a significant stress relaxation at elevated temperatures that is normally found in unpassivated films. Furthermore, a significant strain hardening during the course of thermal loading was noted. Simple continuum plasticity analyses show that the experimentally measured stress-temperature response can only be rationalized with a kinematic hardening model. Analytical procedures for extracting the constitutive properties of the films that were developed on the basis of such a model are presented. The initial yield strength is higher and tends to be less temperature dependent in thinner films. The strain hardening rate is found to increase with decreasing film thickness.

Relaxorlike dielectric behavior in Ba0.7Sr0.3TiO3 thin films

NASA Astrophysics Data System (ADS)

Zednik, Ricardo J.; McIntyre, Paul C.; Baniecki, John D.; Ishii, Masatoshi; Shioga, Takeshi; Kurihara, Kazuaki

2007-03-01

We present the results of a systematic dielectric study for sputter deposited barium strontium titanate thin film planar capacitors measured over a wide temperature range of 20-575K for frequencies between 1kHz and 1MHz. Our observations of dielectric loss peaks in the temperature and frequency domains cannot be understood in the typical framework of intrinsic phonon losses. We find that the accepted phenomenological Curie-von Schweidler dielectric behavior (universal relaxation law) in our barium strontium titanate films is only applicable over a narrow temperature range. An excellent fit to the Vogel-Fulcher expression suggests relaxorlike behavior in these films. The activation energy of the observed phenomenon suggests that oxygen ion motion play a role in the apparent relaxor behavior, although further experimental work is required to test this hypothesis.

Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique

NASA Astrophysics Data System (ADS)

Ali, H. M.; Mohamed, H. A.; Mohamed, S. H.

2005-08-01

Indium tin oxide (ITO) is widely utilized in numerous industrial applications due to its unique combined properties of transparency to visible light and electrical conductivity. ITO films were deposited on glass substrates by an electron beam evaporation technique at room temperature from bulk samples, with different thicknesses. The film with 1500 Å thick was selected to perform annealing in the temperature range of 200 400 °C and annealing for varying times from 15 to 120 min at 400 °C. The X-ray diffraction of the films was analyzed in order to investigate its dependence on thickness, and annealing. Electrical and optical measurements were also carried out. Transmittance, optical energy gap, refractive index, carrier concentration, thermal emissivity and resistivity were investigated. It was found that the as-deposited films with different thicknesses were highly absorbing and have relatively poor electrical properties. The films become opaque with increasing the film thickness. After thermal annealing, the resistance decreases and a simultaneous variation in the optical transmission occurs. A transmittance value of 85.5% in the IR region and 82% in the visible region of the spectrum and a resistivity of 2.8 × 10-4 Ω Cm were obtained at annealing temperature of 400 °C for 120 min.

Genesis of Silica-Carbonate Type Mercury Ore Deposits in Coast Range California from Mantle Derived Fluids

NASA Astrophysics Data System (ADS)

Rytuba, J. J.; Kirby, S. H.; Kellner, C. R.

2016-12-01

In the Coast Range of California 51 major mercury (Hg) deposits and numerous smaller Hg occurrences began forming when subduction transitioned to the transpressive continental-transform kinematics of the San Andreas Fault System. The Hg deposits become progressively younger to the north reflecting the change in tectonic environment as the Mendocino Triple Junction moved 400 km northward since the Miocene to its present location in northern California. The silica-carbonate mercury deposits are vein and replacement ore bodies developed within and adjacent to serpentinite that was emplaced along regional faults and altered to an assemblage of silica and carbonate minerals. The initial alteration process consists of the addition of carbonate to the serpentinite followed by introduction of silica into the central core. The peripheral zone of calcite-dolomite veining may extend for several kilometers outward from a mercury deposit. The large Hg deposits formed in structural traps, such as antiformal structures, and the ores locally extend into adjacent clastic metasedimentary rocks. The mineralogy of the primary ores is simple consisting of cinnabar, metacinnabar and elemental Hg. The deposits formed from low-temperature, <120oC, CO2-CH4-H2S-rich fluids. The hydrothermal fluids are consistent with a mantle source water derived from the former forearc during subduction and after the transition to transpressive continental-transform boundary as proposed by Kirby et al. (EPS, 2014). Some of the silica-carbonate Hg deposits are overprinted by younger hot spring type Hg mineralization associated temporally with volcanic vents. These Hg deposits have distinctly different types of alteration and geochemistry and formed in the near surface from meteoric waters.

Aerodynamic drag characterization and deposition studies of irregular particles. Part 3: Analysis of flow and temperature field inside the Combustion Deposition Entrained Reactor (CDER)

NASA Astrophysics Data System (ADS)

Celik, I.; Katragadda, S.; Nagarajan, R.

1990-01-01

An experimental and numerical analysis was performed of the temperature and flow field involved in co-axial, confined, non-reacting heated jets in a drop tube reactor. An electrically heated 2-inch (50.8 mm) diameter drop tube reactor was utilized to study the jet characteristics. Profiles of gas temperature, typically in the range of 800 to 1600 K were measured in the mixing zone of the jet with a K-Type thermocouple. Measured temperatures were corrected for conduction, convection, and radiation heat losses. Because of limited access to the mixing zone, characterization of the flow field at high temperatures with laser Doppler or hot wire anemometry were impractical. A computer program which solves the full equations of motion and energy was employed to simulate the temperature and flow fields. The location of the recirculation region, the flow regimes, and the mixing phenomena were studied. The wall heating, laminar and turbulent flow regimes were considered in the simulations. The predictions are in fairly good agreement with the corrected temperature measurements provided that the flow is turbulent. The results of this study demonstrate how a numerical method and measurement can be used together to analyze the flow conditions inside a reactor which has limited access because of very high temperatures.

High-Performance Polymers Sandwiched with Chemical Vapor Deposited Hexagonal Boron Nitrides as Scalable High-Temperature Dielectric Materials.

PubMed

Azizi, Amin; Gadinski, Matthew R; Li, Qi; AlSaud, Mohammed Abu; Wang, Jianjun; Wang, Yi; Wang, Bo; Liu, Feihua; Chen, Long-Qing; Alem, Nasim; Wang, Qing

2017-09-01

Polymer dielectrics are the preferred materials of choice for power electronics and pulsed power applications. However, their relatively low operating temperatures significantly limit their uses in harsh-environment energy storage devices, e.g., automobile and aerospace power systems. Herein, hexagonal boron nitride (h-BN) films are prepared from chemical vapor deposition (CVD) and readily transferred onto polyetherimide (PEI) films. Greatly improved performance in terms of discharged energy density and charge-discharge efficiency is achieved in the PEI sandwiched with CVD-grown h-BN films at elevated temperatures when compared to neat PEI films and other high-temperature polymer and nanocomposite dielectrics. Notably, the h-BN-coated PEI films are capable of operating with >90% charge-discharge efficiencies and delivering high energy densities, i.e., 1.2 J cm -3 , even at a temperature close to the glass transition temperature of polymer (i.e., 217 °C) where pristine PEI almost fails. Outstanding cyclability and dielectric stability over a straight 55 000 charge-discharge cycles are demonstrated in the h-BN-coated PEI at high temperatures. The work demonstrates a general and scalable pathway to enable the high-temperature capacitive energy applications of a wide range of engineering polymers and also offers an efficient method for the synthesis and transfer of 2D nanomaterials at the scale demanded for applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of annealing temperature on the structural, mechanical and electrical properties of flexible bismuth telluride thin films prepared by high-pressure RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Singkaselit, Kamolmad; Sakulkalavek, Aparporn; Sakdanuphab, Rachsak

2017-09-01

In this work Bi x Te y thin films were deposited on polyimide substrate by a high-pressure RF magnetron sputtering technique. The deposited condition was maintained using a high pressure of 1.3  ×  10-2 mbar. The as-deposited films show Bi2Te3 structure with Te excess phase (Te-rich Bi2Te3). After that, as-deposited films were annealed in the vacuum chamber under the N2 flow at temperatures from 250 to 400 °C for one hour. The microstructure, cross-section, [Bi]:[Te] content, and the mechanical, electrical and thermoelectric properties of as-deposited and different annealed films were investigated. It was found that the annealing temperature enhanced the crystallinity and film density for the temperature range 250-300 °C. However, the crystal structure of Bi2Te3 almost changed to the BiTe structure after annealing the films above 350 °C, due to the re-evaporation of Te. Nano-indentation results and cross-section images indicated that the hardness of the films related to the film density. The maximum hardness of 2.30 GPa was observed by annealing the films at 300 °C. As a result of an improvement in crystallinity and phase changes, the highest power factor of 11.45  ×  10-4 W m-1K-2 at 300 °C with the carrier concentration and mobility of 6.15  ×  1020 cm-3 and 34.03 cm2 V-1 s-1, respectively, was achieved for the films annealed at 400 °C. Contribution at the 4th Southeast Asia Conference on Thermoelectrics 2016 (SACT 2016), 15-18 December 2016, Da Nang City, Vietnam.

Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

NASA Astrophysics Data System (ADS)

Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

2013-09-01

Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.

PubMed

Ma, Qian; Zheng, He-Mei; Shao, Yan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

2018-01-09

Atomic-layer-deposition (ALD) of In 2 O 3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H 2 O 2 ) as precursors. The In 2 O 3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (E g ) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In 2 O 3 , and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In 2 O 3 thin-film transistors with an Al 2 O 3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm 2 /V⋅s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 10 7 . This was ascribed to passivation of oxygen vacancies in the device channel.

Performance and Stability Enhancement of In-Sn-Zn-O TFTs Using SiO2 Gate Dielectrics Grown by Low Temperature Atomic Layer Deposition.

PubMed

Sheng, Jiazhen; Han, Ju-Hwan; Choi, Wan-Ho; Park, Jozeph; Park, Jin-Seong

2017-12-13

Silicon dioxide (SiO 2 ) films were synthesized by plasma-enhanced atomic layer deposition (PEALD) using BTBAS [bis(tertiarybutylamino) silane] as the precursor and O 2 plasma as the reactant, at a temperature range from 50 to 200 °C. While dielectric constant values larger than 3.7 are obtained at all deposition temperatures, the leakage current levels are drastically reduced to below 10 -12 A at temperatures above 150 °C, which are similar to those obtained in thermally oxidized and PECVD grown SiO 2 . Thin film transistors (TFTs) based on In-Sn-Zn-O (ITZO) semiconductors were fabricated using thermal SiO 2 , PECVD SiO 2 , and PEALD SiO 2 grown at 150 °C as the gate dielectrics, and superior device performance and stability are observed in the last case. A linear field effect mobility of 68.5 cm 2 /(V s) and a net threshold voltage shift (ΔV th ) of approximately 1.2 V under positive bias stress (PBS) are obtained using the PEALD SiO 2 as the gate insulator. The relatively high concentration of hydrogen in the PEALD SiO 2 is suggested to induce a high carrier density in the ITZO layer deposited onto it, which results in enhanced charge transport properties. Also, it is most likely that the hydrogen atoms have passivated the electron traps related to interstitial oxygen defects, thus resulting in improved stability under PBS. Although the PECVD SiO 2 contains a hydrogen concentration similar to that of PEALD SiO 2 , its relatively large surface roughness appears to induce scattering effects and the generation of electron traps, which result in inferior device performance and stability.

Effect of bath temperature on structure, morphology and thermoelectric properties of CoSb{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yadav, Suchitra, E-mail: suchitrayadav87@gmail.com; Pandya, Dinesh K.; Chaudhary, Sujeet

2016-05-23

CoSb{sub 3} thin films are deposited on conducting glass substrates (FTO) by electrodeposition at different bath temperatures (60°C, 70°C and 80°C) and the resulting influence of the bath temperature on the structure, morphology and electrical properties of films is investigated. X-ray diffraction confirms the formation of CoSb{sub 3} phase in the films. Scanning electron microscopy reveals that different morphologies ranging from branched nano-flakes to nano-needles evolve as bath temperature increases. It is concluded that a growth temperature of 80°C is suitable for producing CoSb{sub 3} films with such properties that show potential feasibility for thermoelectric applications.

LiNixCo1-xO2 Cell Grown by Pulsed Laser Deposition

NASA Astrophysics Data System (ADS)

Rao, M. C.; Ravindranadh, K.; Begum, Sk. Muntaz; Nirmala, G.

2011-07-01

Thin films of LiNixCo1-xO2 were prepared by pulsed laser deposition technique. Two important deposition parameters such as substrate temperature and oxygen partial pressure during the thin film deposition were controlled. The electrochemical measurements were carried out on Li//LiNixCo1-xO2 cells with a lithium metal foil as anode and LiNixCo1-xO2 film as cathode of 1.5 cm2 active area using a Teflon home-made cell hardware. Electrochemical titration was made by charging and discharging the cells using the galvanostatic mode of a Mac-Pile single 608 electrochemical analyzer system in the potential range between 2.0 and 4.1 V. Specific capacity as high as 220 mC/cm2 μm was measured for the film grown at 700 °C.

Deposition of hermetic silver shells onto copper flakes.

PubMed

Njagi, John I; Netzband, Christopher M; Goia, Dan V

2017-02-15

Continuous silver shells were deposited on copper flakes using a two-stage precipitation process. A tightly packed layer of silver nanoparticles was first formed on the surface of the base metal by galvanic displacement. The size of the noble metal particles and their distribution on the substrate were controlled using complexing agents and dispersants. A continuous Ag deposit was subsequently grown by reducing slowly [Ag(NH 3 ) 2 ] + ions with glucose. The final shell thickness was controlled by varying the amount of metal deposited in the second step. The electrical properties of resulting silver coated copper flakes are comparable to those measured for silver flakes of similar size and aspect ratio. By preventing the oxidation of copper cores up to 400°C, the hermetic noble metal shell dramatically extends the temperature range in which Ag/Cu flakes can successfully replace pure silver. Copyright © 2016 Elsevier Inc. All rights reserved.

Method of fabrication of electrodes and electrolytes

DOEpatents

Jankowski, Alan F.; Morse, Jeffrey D.

2004-01-06

Fuel cell stacks contain an electrolyte layer surrounded on top and bottom by an electrode layer. Porous electrodes are prepared which enable fuel and oxidant to easily flow to the respective electrode-electrolyte interface without the need for high temperatures or pressures to assist the flow. Rigid, inert microspheres in combination with thin-film metal deposition techniques are used to fabricate porous anodes, cathodes, and electrolytes. Microshperes contained in a liquid are randomly dispersed onto a host structure and dried such that the microsperes remain in position. A thin-film deposition technique is subsequently employed to deposit a metal layer onto the microsperes. After such metal layer deposition, the microspheres are removed leaving voids, i.e. pores, in the metal layer, thus forming a porous electrode. Successive repetitions of the fabrication process result in the formation of a continuous fuel cell stack. Such stacks may produce power outputs ranging from about 0.1 Watt to about 50 Watts.

Variable temperature semiconductor film deposition

DOEpatents

Li, X.; Sheldon, P.

1998-01-27

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Variable temperature semiconductor film deposition

DOEpatents

Li, Xiaonan; Sheldon, Peter

1998-01-01

A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Direct molecular dynamics simulation of Ge deposition on amorphous SiO 2 at experimentally relevant conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chuang, Claire Y.; Zepeda-Ruiz, Luis A.; Han, Sang M.

2015-06-01

Molecular dynamics simulations were used to study Ge island nucleation and growth on amorphous SiO 2 substrates. This process is relevant in selective epitaxial growth of Ge on Si, for which SiO 2 is often used as a template mask. The islanding process was studied over a wide range of temperatures and fluxes, using a recently proposed empirical potential model for the Si–SiO 2–Ge system. The simulations provide an excellent quantitative picture of the Ge islanding and compare well with detailed experimental measurements. These quantitative comparisons were enabled by an analytical rate model as a bridge between simulations and experimentsmore » despite the fact that deposition fluxes accessible in simulations and experiments are necessarily different by many orders of magnitude. In particular, the simulations led to accurate predictions of the critical island size and the scaling of island density as a function of temperature. Lastly, the overall approach used here should be useful not just for future studies in this particular system, but also for molecular simulations of deposition in other materials.« less

Transparent heaters made by ultrasonic spray pyrolysis of SnO2 on soda-lime glass substrates

NASA Astrophysics Data System (ADS)

Ansari, Mohammad; Akbari-Saatloo, Mehdi; Gharesi, Mohsen

2017-12-01

Transparent heaters have become important owing to the increasing demand in automotive and display device manufacturing industries. Indium tin oxide (ITO) is the most commonly used material for production of transparent heaters, but the fabrication cost is high as the indium resources are diminishing fast. This has been the driving force behind the intense research for discovering more durable and cost-effective alternatives. Tin oxide, with its high temperature stability and coexisting high levels of conductivity and transparency, can replace expensive ITO in the fabrication of transparent heaters. Here, we propose tin oxide films deposited using ultrasonic spray pyrolysis as the raw material for the fabrication of transparent heaters. Silver contacts are paste printed on the deposited SnO2 layers, which provide the necessary connections to the external circuitry. Deposition of films having sheet resistance in the 150 Ω/□ range takes only ∼5 minutes and the utilized methods are fully scalable to mass production level. Durability tests, carried out for weeks of continuous operation at different elevated temperatures, demonstrated the long load life of the produced heaters.

Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si

NASA Astrophysics Data System (ADS)

Ali, Ahmad Hadi; Hassan, Zainuriah; Shuhaimi, Ahmad

2018-06-01

This paper reports on the enhancement of optical transmittance and electrical resistivity of indium tin oxide (ITO) transparent conductive oxides (TCO) deposited by radio frequency (RF) sputtering on Si substrate. Post-annealing was conducted on the samples at temperature ranges of 500-700 °C. From X-ray diffraction analysis (XRD), ITO (2 2 2) peak was observed after post-annealing indicating crystallization phase of the films. From UV-vis measurements, the ITO thin film shows highest transmittance of more than 90% at post-annealing temperature of 700 °C as compared to the as-deposited thin films. From atomic force microscope (AFM), the surface roughness becomes smoother after post-annealing as compared to the as-deposited. The lowest electrical resistivity for ITO sample is 6.68 × 10-4 Ω cm after post-annealed at 700 °C that are contributed by high carrier concentration and mobility. The improved structural and surface morphological characteristics helps in increasing the optical transmittance and reducing the electrical resistivity of the ITO thin films.

Trace elements in hydrothermal quartz: Relationships to cathodoluminescent textures and insights into vein formation

USGS Publications Warehouse

Rusk, B.G.; Lowers, H.A.; Reed, M.H.

2008-01-01

High-resolution electron microprobe maps show the distribution of Ti, Al, Ca, K, and Fe among quartz growth zones revealed by scanning electron microscope-cathodoluminescence (SEM-CL) from 12 hydrothermal ore deposits formed between ???100 and e1750 ??C. The maps clearly show the relationships between trace elements and CL intensity in quartz. Among all samples, no single trace element consistently correlates with variations in CL intensity. However in vein quartz from five porphyry-Cu (Mo-Au) deposits, CL intensity always correlates positively with Ti concentrations, suggesting that Ti is a CL activator in quartz formed at >400 ??C. Ti concentrations in most rutile-bearing vein quartz from porphyry copper deposits indicate reasonable formation temperatures of 2000 ppm, but in high-temperature quartz, Al concentrations are consistently in the range of several hundred ppm. Aluminum concentrations in quartz refl ect the Al solubility in hydrothermal fluids, which is strongly dependent on pH. Aluminum concentrations in quartz therefore reflect fluctuations in pH that may drive metal-sulfide precipitation in hydrothermal systems. ?? 2008 The Geological Society of America.

Niobium boride layers deposition on the surface AISI D2 steel by a duplex treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kon, O., E-mail: okon42@htotmail.com; Pazarlioglu, S.; Sen, S.

2015-03-30

In this paper, we investigated the possibility of deposition of niobium boride layers on the surface of AISI D2 steel by a duplex treatment. At the first step of duplex treatment, boronizing was performed on AISI D2 steel samples at 1000{sup o}C for 2h and then pre-boronized samples niobized at 850°C, 900°C and 950°C using thermo-reactive deposition method for 1–4 h. The presence of the niobium boride layers such as NbB, NbB{sub 2} and Nb{sub 3}B{sub 4} and also iron boride phases such as FeB, Fe{sub 2}B were examined by X-ray diffraction analysis. Scanning electron microscope (SEM) and micro-hardness measurementsmore » were realized. Experimental studies showed that the depth of the coating layers increased with increasing temperature and times and also ranged from 0.42 µm to 2.43 µm, depending on treatment time and temperature. The hardness of the niobium boride layer was 2620±180 HV{sub 0.005}.« less

Characterization of TiCN coatings deposited by magnetron sputter-ion plating process: RBS and GDOS complementary analyses

NASA Astrophysics Data System (ADS)

Freire, F. L., Jr.; Senna, L. F.; Achete, C. A.; Hirsch, T.

1998-03-01

Hard TiCN films were deposited by dc-magnetron sputter-ion plating technique onto high-speed carbon steel S-6-5-2 (M 2). For selected deposition conditions, TiCN films were also deposited onto Si substrates. A Ti target was sputtered in ArCH 4N 2 atmosphere. The argon flux (12 sccm) was fixed and corresponds to 90% of the total flux, whereas the N 2 flux ranged from 3% to 9% of the total flux. The total pressure in the chamber during film deposition was 8-9 × 10 -2Pa. The substrate bias, Vb, was between 0 and -140V and the substrate temperature, Ts, was 350°C. Film composition and depth profile of the elements were obtained by Rutherford backscattering spectrometry (RBS) and glow discharge optical spectroscopy (GDOS). Some limitations of both techniques in analysing TiCN films were presented. The effect of methane poisoing of the Ti target and how it influences the film composition was discussed.