Sample records for der p-ge-laser miniaturisierung

  1. Laser annealed in-situ P-doped Ge for on-chip laser source applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Srinivasan, Ashwyn; Pantouvaki, Marianna; Shimura, Yosuke; Porret, Clement; Van Deun, Rik; Loo, Roger; Van Thourhout, Dries; Van Campenhout, Joris

    2016-05-01

    Realization of a monolithically integrated on-chip laser source remains the holy-grail of Silicon Photonics. Germanium (Ge) is a promising semiconductor for lasing applications when highly doped with Phosphorous (P) and or alloyed with Sn [1, 2]. P doping makes Ge a pseudo-direct band gap material and the emitted wavelengths are compatible with fiber-optic communication applications. However, in-situ P doping with Ge2H6 precursor allows a maximum active P concentration of 6×1019 cm-3 [3]. Even with such active P levels, n++ Ge is still an indirect band gap material and could result in very high threshold current densities. In this work, we demonstrate P-doped Ge layers with active n-type doping beyond 1020 cm-3, grown using Ge2H6 and PH3 and subsequently laser annealed, targeting power-efficient on-chip laser sources. The use of Ge2H6 precursors during the growth of P-doped Ge increases the active P concentration level to a record fully activated concentration of 1.3×1020 cm-3 when laser annealed with a fluence of 1.2 J/cm2. The material stack consisted of 200 nm thick P-doped Ge grown on an annealed 1 µm Ge buffer on Si. Ge:P epitaxy was performed with PH3 and Ge2H6 at 320oC. Low temperature growth enable Ge:P epitaxy far from thermodynamic equilibrium, resulting in an enhanced incorporation of P atoms [3]. At such high active P concentration, the n++ Ge layer is expected to be a pseudo-direct band gap material. The photoluminescence (PL) intensities for layers with highest active P concentration show an enhancement of 18× when compared to undoped Ge grown on Si as shown in Fig. 1 and Fig. 2. The layers were optically pumped with a 640 nm laser and an incident intensity of 410 mW/cm2. The PL was measured with a NIR spectrometer with a Hamamatsu R5509-72 NIR photomultiplier tube detector whose detectivity drops at 1620 nm. Due to high active P concentration, we expect band gap narrowing phenomena to push the PL peak to wavelengths beyond the detection limit

  2. van der Waals epitaxy of Ge films on mica

    NASA Astrophysics Data System (ADS)

    Littlejohn, A. J.; Xiang, Y.; Rauch, E.; Lu, T.-M.; Wang, G.-C.

    2017-11-01

    To date, many materials have been successfully grown on substrates through van der Waals epitaxy without adhering to the constraint of lattice matching as is required for traditional chemical epitaxy. However, for elemental semiconductors such as Ge, this has been challenging and therefore it has not been achieved thus far. In this paper, we report the observation of Ge epitaxially grown on mica at a narrow substrate temperature range around 425 °C. Despite the large lattice mismatch (23%) and the lack of high in-plane symmetry in the mica surface, an epitaxial Ge film with [111] out-of-plane orientation is observed. Crystallinity and electrical properties degrade upon deviation from the ideal growth temperature, as shown by Raman spectroscopy, X-ray diffraction, and Hall effect measurements. X-ray pole figure analysis reveals that there exist multiple rotational domains in the epitaxial Ge film with dominant in-plane orientations between Ge [" separators="|1 ¯10 ] and mica[100] of (20 n )°, where n = 0, 1, 2, 3, 4, 5. A superlattice area mismatch model was used to account for the likelihood of the in-plane orientation formation and was found to be qualitatively consistent with the observed dominant orientations. Our observation of Ge epitaxy with one out-of-plane growth direction through van der Waals forces is a step toward the growth of single crystal Ge films without the constraint in the lattice and symmetry matches with the substrates.

  3. Two-dimensional n -InSe/p -GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance

    NASA Astrophysics Data System (ADS)

    Xia, Cong-xin; Du, Juan; Huang, Xiao-wei; Xiao, Wen-bo; Xiong, Wen-qi; Wang, Tian-xing; Wei, Zhong-ming; Jia, Yu; Shi, Jun-jie; Li, Jing-bo

    2018-03-01

    Recently, constructing van der Waals (vdW) heterojunctions by stacking different two-dimensional (2D) materials has been considered to be effective strategy to obtain the desired properties. Here, through first-principles calculations, we find theoretically that the 2D n -InSe/p -GeSe(SnS) vdW heterojunctions are the direct-band-gap semiconductor with typical type-II band alignment, facilitating the effective separation of photogenerated electron and hole pairs. Moreover, they possess the high optical absorption strength (˜105 ), broad spectrum width, and excellent carrier mobility (˜103c m2V-1s-1 ). Interestingly, under the influences of the interlayer coupling and external electric field, the characteristics of type-II band alignment is robust, while the band-gap values and band offset are tunable. These results indicate that 2D n -InSe/p -GeSe(SnS) heterojunctions possess excellent optoelectronic and transport properties, and thus can become good candidates for next-generation optoelectronic nanodevices.

  4. NONLINEAR OPTICS PHENOMENA: Second harmonic generation from DF laser radiation in ZnGeP2

    NASA Astrophysics Data System (ADS)

    Andreev, Yu M.; Velikanov, S. D.; Yerutin, A. S.; Zapol'skiĭ, A. F.; Konkin, D. V.; Mishkin, S. N.; Smirnov, S. V.; Frolov, Yu N.; Shchurov, V. V.

    1992-11-01

    We have succeeded in generating the second harmonic of the radiation from a DF laser for the first time, using single crystals of ZnGeP2. For crystals with lengths of 10.1 and 13.6 mm, the overall external efficiencies of the entire oscillator system were 4 and 6.2%. The internal efficiencies of second-harmonic generation in the crystals were 7.6 and 11.8%, respectively.

  5. Strain-free Ge/GeSiSn Quantum Cascade Lasers Based on L-Valley Intersubband Transitions

    DTIC Science & Technology

    2007-01-01

    found in III-V quantum cascade lasers QCLs. Various groups have obtained electroluminescence from Si-rich Si/SiGe quantum cascade structures,2–4 but...Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions 5c. PROGRAM ELEMENT NUMBER 612305 6. AUTHOR(S) 5d. PROJECT NUMBER...ABSTRACT The authors propose a Ge/Ge0.76Si0.19Sn0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band

  6. Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

    PubMed Central

    2013-01-01

    In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms’ redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones. PMID:23735193

  7. Impacts of excimer laser annealing on Ge epilayer on Si

    NASA Astrophysics Data System (ADS)

    Huang, Zhiwei; Mao, Yichen; Yi, Xiaohui; Lin, Guangyang; Li, Cheng; Chen, Songyan; Huang, Wei; Wang, Jianyuan

    2017-02-01

    The impacts of excimer laser annealing on the crystallinity of Ge epilayers on Si substrate grown by low- and high-temperature two-step approach in an ultra-high vacuum chemical vapor deposition system were investigated. The samples were treated by excimer laser annealing (ELA) at various laser power densities with the temperature above the melting point of Ge, while below that of Si, resulting in effective reduction of point defects and dislocations in the Ge layer with smooth surface. The full-width at half-maximum (FWHM) of X-ray diffraction patterns of the low-temperature Ge epilayer decreases with the increase in laser power density, indicating the crystalline improvement and negligible effect of Ge-Si intermixing during ELA processes. The short laser pulse time and large cooling rate cause quick melting and recrystallization of Ge epilayer on Si in the non-thermal equilibrium process, rendering tensile strain in Ge epilayer as calculated quantitatively with thermal mismatch between Si and Ge. The FWHM of X-ray diffraction patterns is significantly reduced for the two-step grown samples after treated by a combination of ELA and conventional furnace thermal annealing, indicating that the crystalline of Ge epilayer is improved more effectively with pre- annealing by excimer laser.

  8. Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Takahashi, Kouta, E-mail: ktakahas@alice.xtal.nagoya-u.ac.jp, E-mail: kurosawa@alice.xtal.nagoya-u.ac.jp; Sakashita, Mitsuo; Takeuchi, Wakana

    2016-02-01

    We have investigated phosphorus (P) doping into Ge(001) surfaces by using ultraviolet laser irradiation in phosphoric acid solution at room temperature. We demonstrated that the diffusion depth of P in Ge and the concentration of electrically activated P can be controlled by the number of laser shots. Indeed, a high concentration of electrically activated P of 2.4 × 10{sup 19} cm{sup −3} was realized by 1000-times laser shots at a laser energy of 1.0 J/cm{sup 2}, which is comparable or better than the counterparts of conventional n-type doping using a high thermal budget over 600 °C. The generation current is dominant in the reverse biasmore » condition for the laser-doped pn-junction diodes independent on the number of laser shots, thus indicating low-damage during the pn-junction formation. These results open up the possibility for applicable low thermal budget doping process for Ge-based devices fabricated on flexible substrates as well as Si electronics.« less

  9. Repetitively pulsed TEA CO{sub 2} laser and its application for second harmonic generation in ZnGeP{sub 2} crystal

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Koval'chuk, L V; Grezev, A N; Niz'ev, V G

    2015-10-31

    Experimental results are presented on the development of a radiation source emitting at a wavelength of 4.775 μm with a pulse energy up to 50 mJ and an average power up to several watts in short pulse trains. A TEA CO{sub 2} laser and a nonlinear converter based on a ZnGeP{sub 2} crystal, which are specially designed for these experiments, are described. The main limitations of nonlinear conversion and possible ways to overcome these limitations are considered. (lasers)

  10. P/N InP solar cells on Ge wafers

    NASA Technical Reports Server (NTRS)

    Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

    1994-01-01

    Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

  11. Physical Approaches to Designing a Two-Cascade Terahertz Laser Generating Difference-Frequency Radiation in a Nonlinear Optical ZnGeP2 Crystal

    NASA Astrophysics Data System (ADS)

    Gribenyukov, A. I.; Dyomin, V. V.; Polovtsev, I. G.; Yudin, N. N.

    2018-03-01

    An optical layout of a two-cascade frequency converter of the mid-IR laser radiation into the terahertz (THz) radiation is proposed. In the first stage it is assumed to convert the Tm:YLF-laser frequency in a Cr+2:ZnSe polycrystal into the radiation with the wavelength 2-3 μm. The second cascade can be presented as a parametric conversion of the frequencies of two laser sources operating in the 2-3 μm range into the THz radiation via the difference-frequency mixing in a nonlinear optical ZnGeP2 crystal. The estimates of the terahertz output signal are reported.

  12. Conjugation of nitrated acetaminophen to Der p1 amplifies peripheral blood monocyte response to Der p1.

    PubMed

    Thomas, Ryan G; Rivera Reyes, Brenda M; Gaston, Benjamin M; Rivera Acosta, Nelki B; Bederman, Ilya R; Smith, Laura A; Sutton, Morgan T; Wang, Benlian; Hunt, John F; Bonfield, Tracey L

    2017-01-01

    An association of acetaminophen use and asthma was observed in the International Study of Asthma and Allergies in Childhood study. However there are no clear mechanisms to explain an association between acetaminophen use and immunologic pathology. In acidic conditions like those in the stomach and inflamed airway, tyrosine residues are nitrated by nitrous and peroxynitrous acids. The resulting nitrotyrosine is structurally similar to 2,4-dinitrophenol and 2,4-dinitrochlorobenzene, known haptens that enhance immune responses by covalently binding proteins. Nitrated acetaminophen shares similar molecular structure. We hypothesized the acetaminophen phenol ring undergoes nitration under acidic conditions, producing 3-nitro-acetaminophen which augments allergic responses by acting as a hapten for environmental allergens. 3-nitro-acetaminophen was formed from acetaminophen in the presence of acidified nitrite, purified by high performance liquid chromatography, and assayed by gas-chromatography mass spectrometry. Purified 3-nitro-acetaminophen was reacted with Dermatophagoides pteronyssinus (Der p1) and analyzed by mass spectrometry to identify the modification site. Human peripheral blood mononuclear cells proliferation response was measured in response to 3-nitro-acetaminophen and to 3-nitro-acetaminophen-modified Der p1. Acetaminophen was modified by nitrous acid forming 3-nitro-acetaminophen over a range of different acidic conditions consistent with airway inflammation and stomach acidity. The Der p1 protein-hapten adduct creation was confirmed by liquid chromatography-mass spectrometry proteomics modifying cysteine 132. Peripheral blood mononuclear cells exposed to 3-nitro-acetaminophen-modified Der p1 had increased proliferation and cytokine production compared to acetaminophen and Der p1 alone (n = 7; p < 0.05). These data suggests 3-nitro-acetaminophen formation and reaction with Der p1 provides a mechanism by which stomach acid or infection-induced low airway

  13. Mikrospritzgießen

    NASA Astrophysics Data System (ADS)

    Ebert, Karl-Herbert; Ammer, Daniel; Hoffstetter, Marc; Wintermantel, Erich

    Bei der Betrachtung von aktuellen Produktentwicklungen lässt sich durch alle Branchen hinweg ein deutlicher Trend zur Miniaturisierung und Funktionsintegration auf kleinstem Raum erkennen. Der Einsatz technischer Kunststoffe, die überwiegend im Thermoplast-Spritzgießverfahren verarbeitet werden, leistet dabei einen wichtigen Beitrag um diese Produktentwicklungen in marktfähige Artikel umsetzen zu können. Hierbei sind im Vergleich zum Standardspritzgießen einige Besonderheiten hinsichtlich des Formenbaus, der Anlagen- sowie Prozesstechnik und der Qualitätssicherung zu beachten.

  14. [Evaluation of sensitization to Der p 1 and Der p 2 in a pediatric population of the North of Portugal].

    PubMed

    Peixoto, Sara; Soares, Joana; Monteiro, Tânia; Carvalho, Marisa; Santos, Marinela; Simões, Carla; Quaresma, Márcia

    2017-12-28

    In Portugal, data on the role of Der p 1 and Der p 2 in patients with house dust mite (HDM) allergy are scarce. Allergen-specific immunotherapy (sIT) is the only treatment that improves symptoms, reduces the need for pharmacological therapy and modifies the natural history of the disease. With this study, the authors aim to understand the local epidemiology and to clarify if the molecular assay of major allergens is advantageous in deciding and/or modifying the decision to initiate sIT in children with clinical indication which are sensitized to Dermatophagoides pteronyssinus. Retrospective study with analysis of patients with asthma and/or rhinitis. January/2013-December/2016. 1) positive prick-test to Dermatophagoides pteronyssinus; and 2) clinically relevant disease under treatment. Assay Der p 1 and Der p 2 values ≥0.35 kUA/L were considered positive. Statistical significance was set at P<.05. The clinical files of 279 patients. Mean ages 9.55 years (min.4-max.17). Asthma was present in 199 children (71.3%) and rhinitis in 245 (87.8%). Der p 1 and Der p 2 was <0.35kUA/L in 29 (10,4%) patients. The value of Der p 1/Der p 2 correlated with the size of the prick-test papule, the value of the eosinophils and the total IgE. Der p 1 and Der p 2 are dominant allergens in our population and there may be benefits in determining these molecular allergen levels in patients with a positive prick-test and a clinical indication for sIT prior to a decision of initiating sIT or not. Copyright © 2017. Publicado por Elsevier España, S.L.U.

  15. Quasi-monoenergetic laser-plasma acceleration of electrons to 2 GeV

    PubMed Central

    Wang, Xiaoming; Zgadzaj, Rafal; Fazel, Neil; Li, Zhengyan; Yi, S. A.; Zhang, Xi; Henderson, Watson; Chang, Y.-Y.; Korzekwa, R.; Tsai, H.-E.; Pai, C.-H.; Quevedo, H.; Dyer, G.; Gaul, E.; Martinez, M.; Bernstein, A. C.; Borger, T.; Spinks, M.; Donovan, M.; Khudik, V.; Shvets, G.; Ditmire, T.; Downer, M. C.

    2013-01-01

    Laser-plasma accelerators of only a centimetre’s length have produced nearly monoenergetic electron bunches with energy as high as 1 GeV. Scaling these compact accelerators to multi-gigaelectronvolt energy would open the prospect of building X-ray free-electron lasers and linear colliders hundreds of times smaller than conventional facilities, but the 1 GeV barrier has so far proven insurmountable. Here, by applying new petawatt laser technology, we produce electron bunches with a spectrum prominently peaked at 2 GeV with only a few per cent energy spread and unprecedented sub-milliradian divergence. Petawatt pulses inject ambient plasma electrons into the laser-driven accelerator at much lower density than was previously possible, thereby overcoming the principal physical barriers to multi-gigaelectronvolt acceleration: dephasing between laser-driven wake and accelerating electrons and laser pulse erosion. Simulations indicate that with improvements in the laser-pulse focus quality, acceleration to nearly 10 GeV should be possible with the available pulse energy. PMID:23756359

  16. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

    NASA Astrophysics Data System (ADS)

    Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

    2012-09-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  17. Formation of Si and Ge films and micropatterns by wet process using laser direct writing method

    NASA Astrophysics Data System (ADS)

    Watanabe, Akira

    2011-03-01

    The studies toward the formation of Si and Ge films and micropatterns by wet process using laser direct writing method are reported. First is the the formation of Si film by laser scanning irradiation to Si nano- or micro-particle dispersed films. By using organogermanium nanocluster (OrGe) as a dispersion medium of Si particles, a homogeneous Si film was formed by laser scanning irradiation on a Si particle/OrGe composite film. The micro-Raman spectra showed the formation of the polycrystalline Ge and SiGe alloy during the fusion of the Si particles by laser irradiation. The second is the formation of the Si and Ge micropatterns by LLDW (liquid phase laser direct writing) method. Micro-Raman spectra showed the formation of polycrystalline Si and Ge micropatterns by laser irradiation on the interfaces of SiCl4/substrate and GeCl4/substrate, respectively.

  18. Enhanced direct-gap light emission from Si-capped n+-Ge epitaxial layers on Si after post-growth rapid cyclic annealing: impact of non-radiative interface recombination toward Ge/Si double heterostructure lasers.

    PubMed

    Higashitarumizu, Naoki; Ishikawa, Yasuhiko

    2017-09-04

    Enhanced direct-gap light emission is reported for Si-capped n + -Ge layers on Si after post-growth rapid cyclic annealing (RCA), and impact of non-radiative recombination (NRR) at the Ge/Si interface is discussed toward Ge/Si double heterostructure (DH) lasers. P-doped n + -Ge layer (1 × 10 19 cm -3 , 400 nm) is grown on Si by ultra-high vacuum chemical vapor deposition, followed by a growth of Si capping layer (5 nm) to form a Si/Ge/Si DH structure. Post-growth RCA to eliminate defects in Ge is performed in N 2 at temperatures between 900°C and 780°C, where the annealing time is minimized to be 5 s in each RCA cycle to prevent an out-diffusion of P dopants from the Ge surface. Direct-gap photoluminescence (PL) intensity at 1.6 µm increases with the RCA cycles up to 40, although the threading dislocation density in Ge is not reduced after 3 cycles in the present condition. The PL enhancement is ascribed to the suppression of NRR at the Ge/Si interface, where an intermixed SiGe alloy is formed. For Ge/Si DH lasers, NRR at the Ge/Si interface is found to have a significant impact on the threshold current density Jth. In order to achieve Jth on the order of 1 kA/cm 2 , similar to III-V lasers, the interface recombination velocity S is required below 10 3 cm/s in spite of S as large as 10 5 cm/s at the ordinary defect-rich Ge/Si interface.

  19. Characteristics of GeV Electron Bunches Accelerated by Intense Lasers in Vacuum

    NASA Astrophysics Data System (ADS)

    Wang, P. X.; Ho, Y. K.; Kong, Q.; Yuan, X. Q.; Cao, N.; Feng, L.

    This paper studies the characteristics of GeV electron bunches driven by ultra-intense lasers in vacuum based on the mechanism of capture and violent acceleration scenario [CAS, see, e.g. J. X. Wang et al., Phys. Rev. E58, 6575 (1998)], which shows an interesting prospect of becoming a new principle of laser-driven accelerators. It has been found that the accelerated GeV electron bunch is a macro-pulse composed of a lot of micro-pulses, which is analogous to the structure of the bunches produced by conventional linacs. The macro-pulse corresponds to the duration of the laser pulse while the micro-pulse corresponds to the periodicity of the laser wave. Therefore, provided that the incoming electron bunch with comparable sizes as that of the laser pulse synchronously impinges on the laser pulse, the total fraction of electrons captured and accelerated to GeV energy can reach more than 20%. These results demonstrate that the mechanisms of CAS is a relatively effective accelerator mechanism.

  20. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

    PubMed Central

    Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

    2016-01-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

  1. Laser source with high pulse energy at 3-5 μm and 8-12 μm based on nonlinear conversion in ZnGeP2

    NASA Astrophysics Data System (ADS)

    Lippert, Espen; Fonnum, Helge; Haakestad, Magnus W.

    2014-10-01

    We present a high energy infrared laser source where a Tm:fiber laser is used to pump a high-energy 2-μm cryogenically cooled Ho:YLF laser. We have achieved 550 mJ of output energy at 2.05 μm, and through non-linear conversion in ZnGeP2 generated 200 mJ in the 3-5-μm range. Using a numerical simulation tool we have also investigated a setup which should generate more than 70 mJ in the 8-12-μm range. The conversion stage uses a master-oscillator-power-amplifier architecture to enable high conversion efficiency and good beam quality.

  2. Towards Resonant-State THz Laser Based on Strained p-Ge and SiGe QW Structures

    DTIC Science & Technology

    2006-07-01

    used. The relaxed compositionally graded Si1-xGex/Si(001) buffer layer with low threading dislocations density have been grown by chemical vapour ...observe in absorption experiments. 5. Intracenter optical transitions between hydrogenic levels in doped silicon, germanium, and gallium arsenid [P...34, b. Critical magnetic field Hc vs valence band splitting Δ. Lines show the calculated Hc(Δ) dependence. 14. The gallium -doped Ge crystals with

  3. Fabrication of oxidation-resistant Ge colloidal nanoparticles by pulsed laser ablation in aqueous HCl

    NASA Astrophysics Data System (ADS)

    Hamanaka, Yasushi; Iwata, Masahiro; Katsuno, Junichi

    2017-06-01

    Spherical Ge nanoparticles with diameters of 20-80 nm were fabricated by laser ablation of a Ge single crystal in water and in aqueous HCl using sub-picosecond laser pulses (1040 nm, 700 fs, 100 kHz, and a pulse energy of 10 µJ). We found that the as-synthesized nanoparticles suffered rapid oxidization followed by dissolution when laser ablation was conducted in pure water. In contrast, oxidation of Ge nanoparticles produced in dilute HCl and stored intact was minimal, and colloidal dispersions of the Ge nanoparticles remained stable up to 7 days. It was elucidated that dangling bonds on the surfaces of the Ge nanoparticles were terminated by Cl, which inhibited oxidation, and that such hydrophilic surfaces might improve the dispersibility of nanoparticles in aqueous solvent.

  4. Numerical analysis of СО laser frequency conversion efficiency in BaGa2GeSe6 crystal

    NASA Astrophysics Data System (ADS)

    Ionin, A. A.; Kinyaevskiy, I. O.; Mozhaeva, V. A.

    2018-03-01

    Non-linear optical characteristics of a new BaGa2GeSe6 crystal were numerically studied and compared with ones of the well-known mid-IR nonlinear crystal ZnGeP2 (ZGP). The calculations demonstrated the new crystal to be more efficient or, at least, competitive with the ZGP crystal for frequency conversion of CO- and CO2-laser radiation. It was found that a broadband two-stage frequency conversion of multi-line CO-laser radiation in this crystal is possible within the 2.5-9.0 µm wavelength range, with higher efficiency than in the ZGP crystal.

  5. Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices.

    PubMed

    Kowalczyk, Philippe; Hippert, Françoise; Bernier, Nicolas; Mocuta, Cristian; Sabbione, Chiara; Batista-Pessoa, Walter; Noé, Pierre

    2018-06-01

    Van der Waals layered GeTe/Sb 2 Te 3 superlattices (SLs) have demonstrated outstanding performances for use in resistive memories in so-called interfacial phase-change memory (iPCM) devices. GeTe/Sb 2 Te 3 SLs are made by periodically stacking ultrathin GeTe and Sb 2 Te 3 crystalline layers. The mechanism of the resistance change in iPCM devices is still highly debated. Recent experimental studies on SLs grown by molecular beam epitaxy or pulsed laser deposition indicate that the local structure does not correspond to any of the previously proposed structural models. Here, a new insight is given into the complex structure of prototypical GeTe/Sb 2 Te 3 SLs deposited by magnetron sputtering, which is the used industrial technique for SL growth in iPCM devices. X-ray diffraction analysis shows that the structural quality of the SL depends critically on its stoichiometry. Moreover, high-angle annular dark-field-scanning transmission electron microscopy analysis of the local atomic order in a perfectly stoichiometric SL reveals the absence of GeTe layers, and that Ge atoms intermix with Sb atoms in, for instance, Ge 2 Sb 2 Te 5 blocks. This result shows that an alternative structural model is required to explain the origin of the electrical contrast and the nature of the resistive switching mechanism observed in iPCM devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Memory properties of a Ge nanoring MOS device fabricated by pulsed laser deposition.

    PubMed

    Ma, Xiying

    2008-07-09

    The non-volatile charge-storage properties of memory devices with MOS structure based on Ge nanorings have been studied. The two-dimensional Ge nanorings were prepared on a p-Si(100) matrix by means of pulsed laser deposition (PLD) using the droplet technique combined with rapid annealing. Complete planar nanorings with well-defined sharp inner and outer edges were formed via an elastic self-transformation droplet process, which is probably driven by the lateral strain of the Ge/Si layers and the surface tension in the presence of Ar gas. The low leakage current was attributed to the small roughness and the few interface states in the planar Ge nanorings, and also to the effect of Coulomb blockade preventing injection. A significant threshold-voltage shift of 2.5 V was observed when an operating voltage of 8 V was implemented on the device.

  7. Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Qayyum, Hamza; Chen, Szu-yuan, E-mail: sychen@ltl.iams.sinica.edu.tw; Department of Physics, National Central University, Zhongli, Taoyuan 320, Taiwan

    2016-05-15

    The capability to fabricate Ge/Si quantum dots with small dot size and high dot density uniformly over a large area is crucial for many applications. In this work, we demonstrate that this can be achieved by scanning a pre-deposited Ge thin layer on Si substrate with a line-focused pulsed laser beam to induce formation of quantum dots. With suitable setting, Ge/Si quantum dots with a mean height of 2.9 nm, a mean diameter of 25 nm, and a dot density of 6×10{sup 10} cm{sup −2} could be formed over an area larger than 4 mm{sup 2}. The average size ofmore » the laser-induced quantum dots is smaller while their density is higher than that of quantum dots grown by using Stranski-Krastanov growth mode. Based on the dependence of the characteristics of quantum dots on the laser parameters, a model consisting of laser-induced strain, surface diffusion, and Ostwald ripening is proposed for the mechanism underlying the formation of the Ge/Si quantum dots. The technique demonstrated could be applicable to other materials besides Ge/Si.« less

  8. Modeling multi-GeV class laser-plasma accelerators with INF&RNO

    NASA Astrophysics Data System (ADS)

    Benedetti, Carlo; Schroeder, Carl; Bulanov, Stepan; Geddes, Cameron; Esarey, Eric; Leemans, Wim

    2016-10-01

    Laser plasma accelerators (LPAs) can produce accelerating gradients on the order of tens to hundreds of GV/m, making them attractive as compact particle accelerators for radiation production or as drivers for future high-energy colliders. Understanding and optimizing the performance of LPAs requires detailed numerical modeling of the nonlinear laser-plasma interaction. We present simulation results, obtained with the computationally efficient, PIC/fluid code INF&RNO (INtegrated Fluid & paRticle simulatioN cOde), concerning present (multi-GeV stages) and future (10 GeV stages) LPA experiments performed with the BELLA PW laser system at LBNL. In particular, we will illustrate the issues related to the guiding of a high-intensity, short-pulse, laser when a realistic description for both the laser driver and the background plasma is adopted. Work Supported by the U.S. Department of Energy under contract No. DE-AC02-05CH11231.

  9. Optical contrast and laser-induced phase transition in GeCu2Te3 thin film

    NASA Astrophysics Data System (ADS)

    Saito, Yuta; Sutou, Yuji; Koike, Junichi

    2013-02-01

    Fast crystallization and low power amorphization are essential to achieve rapid data recording and low power consumption in phase-change memory. This work investigated the laser-induced phase transition behaviors of GeCu2Te3 film based on the reflectance of amorphous and crystalline states. The GeCu2Te3 film showed a reflectance decrease upon crystallization, which was the opposite behavior in Ge2Sb2Te5 film. The crystallization starting time of the as-deposited GeCu2Te3 film was as fast as that of the as-deposited Ge2Sb2Te5 film. Furthermore, the GeCu2Te3 crystalline film was found to be reamorphized by laser irradiation at lower power and shorter pulse width than the Ge2Sb2Te5.

  10. Theory for n-type doped, tensile-strained Ge-Si(x)Ge(y)Sn1-x-y quantum-well lasers at telecom wavelength.

    PubMed

    Chang, Guo-En; Chang, Shu-Wei; Chuang, Shun Lien

    2009-07-06

    We propose and develop a theoretical gain model for an n-doped, tensile-strained Ge-Si(x)Ge(y)Sn(1-x-y) quantum-well laser. Tensile strain and n doping in Ge active layers can help achieve population inversion in the direct conduction band and provide optical gain. We show our theoretical model for the bandgap structure, the polarization-dependent optical gain spectrum, and the free-carrier absorption of the n-type doped, tensile-strained Ge quantum-well laser. Despite the free-carrier absorption due to the n-type doping, a significant net gain can be obtained from the direct transition. We also present our waveguide design and calculate the optical confinement factors to estimate the modal gain and predict the threshold carrier density.

  11. Crystal Structures of Mite Allergens Der f 1 and Der p 1 Reveal Differences in Surface-Exposed Residues that May Influence Antibody Binding

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chruszcz, Maksymilian; Chapman, Martin D.; Vailes, Lisa D.

    2009-12-01

    The Group 1 mite allergens, Der f 1 and Der p 1, are potent allergens excreted by Dermatophagoides farinae and Dermatophagoides pteronyssinus, respectively. The human IgE antibody responses to the Group 1 allergens show more cross-reactivity than the murine IgG antibody responses which are largely species-specific. Here, we report the crystal structure of the mature form of Der f 1, which was isolated from its natural source, and a new, high-resolution structure of mature recombinant Der p 1. Unlike Der p 1, Der f 1 is monomeric both in the crystalline state and in solution. Moreover, no metal binding ismore » observed in the structure of Der f 1, despite the fact that all amino acids involved in Ca{sup 2+} binding in Der p 1 are completely conserved in Der f 1. Although Der p 1 and Der f 1 share extensive sequence identity, comparison of the crystal structures of both allergens revealed structural features which could explain the differences in murine and human IgE antibody responses to these allergens. There are structural differences between Der f 1 and Der p 1 which are unevenly distributed on the allergens' surfaces. This uneven spatial arrangement of conserved versus altered residues could explain both the specificity and cross-reactivity of antibodies against Der f 1 and Der p 1.« less

  12. Multi-GeV electron-positron beam generation from laser-electron scattering.

    PubMed

    Vranic, Marija; Klimo, Ondrej; Korn, Georg; Weber, Stefan

    2018-03-16

    The new generation of laser facilities is expected to deliver short (10 fs-100 fs) laser pulses with 10-100 PW of peak power. This opens an opportunity to study matter at extreme intensities in the laboratory and provides access to new physics. Here we propose to scatter GeV-class electron beams from laser-plasma accelerators with a multi-PW laser at normal incidence. In this configuration, one can both create and accelerate electron-positron pairs. The new particles are generated in the laser focus and gain relativistic momentum in the direction of laser propagation. Short focal length is an advantage, as it allows the particles to be ejected from the focal region with a net energy gain in vacuum. Electron-positron beams obtained in this setup have a low divergence, are quasi-neutral and spatially separated from the initial electron beam. The pairs attain multi-GeV energies which are not limited by the maximum energy of the initial electron beam. We present an analytical model for the expected energy cutoff, supported by 2D and 3D particle-in-cell simulations. The experimental implications, such as the sensitivity to temporal synchronisation and laser duration is assessed to provide guidance for the future experiments.

  13. Measurements of e p → e ' π + π - p ' cross sections with CLAS at 1.40 GeV < W < 2.0 GeV and 2.0 GeV 2 < Q 2 < 5.0 GeV 2

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Isupov, E. L.; Burkert, V. D.; Carman, D. S.

    This paper reports new exclusive cross sections formore » $$e p \\to e' \\pi^+ \\pi^- p'$$ using the CLAS detector at Jefferson Laboratory. These results are presented for the first time at photon virtualities 2.0 GeV 2 < Q 2 < 5.0 GeV 2 in the center-of-mass energy range 1.4 GeV < W < 2.0 GeV, which covers a large part of the nucleon resonance region. Using a model developed for the phenomenological analysis of electroproduction data, we see strong indications that the relative contributions from the resonant cross sections at W < 1.74 GeV increase with $Q^2$. These data considerably extend the kinematic reach of previous measurements. Exclusive $$e p \\to e' \\pi^+ \\pi^- p'$$ cross section measurements are of particular importance for the extraction of resonance electrocouplings in the mass range above 1.6 GeV.« less

  14. Performance analysis of GeSn-alloy-based multiple quantum well transistor laser

    NASA Astrophysics Data System (ADS)

    Ranjan, Ravi; Pareek, Prakash; Anwer Askari, Syed Sadique; Das, Mukul K.

    2018-02-01

    The Group IV Photonics (GFP) which include an alloy of Si, Ge & Sn that gives a direct bandgap material (GeSn, SiGeSn) in near and mid-IR region used as an active material in photonics devices. The multiple quantum well SiGeSn/GeSn transistor laser structure is considered in this paper and performance parameters are evaluated for the same. The result shows that the threshold base current density (2.6 kA/cm2) for the proposed device initially decreases with increasing number of quantum well (QW) and later on it saturates. The current gain and output photon density of the device decreases and increases respectively, with increasing number of QW.

  15. Rational design of monocrystalline (InP)(y)Ge(5-2y)/Ge/Si(100) semiconductors: synthesis and optical properties.

    PubMed

    Sims, Patrick E; Chizmeshya, Andrew V G; Jiang, Liying; Beeler, Richard T; Poweleit, Christian D; Gallagher, James; Smith, David J; Menéndez, José; Kouvetakis, John

    2013-08-21

    In this work, we extend our strategy previously developed to synthesize functional, crystalline Si(5-2y)(AlX)y {X = N,P,As} semiconductors to a new class of Ge-III-V hybrid compounds, leading to the creation of (InP)(y)Ge(5-2y) analogues. The compounds are grown directly on Ge-buffered Si(100) substrates using gas source MBE by tuning the interaction between Ge-based P(GeH3)3 precursors and In atoms to yield nanoscale "In-P-Ge3" building blocks, which then confer their molecular structure and composition to form the target solids via complete elimination of H2. The collateral production of reactive germylene (GeH2), via partial decomposition of P(GeH3)3, is achieved by simple adjustment of the deposition conditions, leading to controlled Ge enrichment of the solid product relative to the stoichiometric InPGe3 composition. High resolution XRD, XTEM, EDX, and RBS indicate that the resultant monocrystalline (InP)(y)Ge(5-2y) alloys with y = 0.3-0.7 are tetragonally strained and fully coherent with the substrate and possess a cubic diamond-like structure. Molecular and solid-state ab initio density functional theory (DFT) simulations support the viability of "In-P-Ge3" building-block assembly of the proposed crystal structures, which consist of a Ge parent crystal in which the P atoms form a third-nearest-neighbor sublattice and "In-P" dimers are oriented to exclude energetically unfavorable In-In bonding. The observed InP concentration dependence of the lattice constant is closely reproduced by DFT simulation of these model structures. Raman spectroscopy and ellipsometry are also consistent with the "In-P-Ge3" building-block interpretation of the crystal structure, while the observation of photoluminescence suggests that (InP)(y)Ge(5-2y) may have important optoelectronic applications.

  16. Control of Laser Plasma Based Accelerators up to 1 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nakamura, Kei

    2007-12-01

    This dissertation documents the development of a broadband electron spectrometer (ESM) for GeV class Laser Wakefield Accelerators (LWFA), the production of high quality GeV electron beams (e-beams) for the first time in a LWFA by using a capillary discharge guide (CDG), and a statistical analysis of CDG-LWFAs. An ESM specialized for CDG-LWFAs with an unprecedented wide momentum acceptance, from 0.01 to 1.1 GeV in a single shot, has been developed. Simultaneous measurement of e-beam spectra and output laser properties as well as a large angular acceptance (> ± 10 mrad) were realized by employing a slitless scheme. A scintillating screenmore » (LANEX Fast back, LANEX-FB)--camera system allowed faster than 1 Hz operation and evaluation of the spatial properties of e-beams. The design provided sufficient resolution for the whole range of the ESM (below 5% for beams with 2 mrad divergence). The calibration between light yield from LANEX-FB and total charge, and a study on the electron energy dependence (0.071 to 1.23 GeV) of LANEX-FB were performed at the Advanced light source (ALS), Lawrence Berkeley National Laboratory (LBNL). Using this calibration data, the developed ESM provided a charge measurement as well. The production of high quality electron beams up to 1 GeV from a centimeter-scale accelerator was demonstrated. The experiment used a 310 μm diameter gas-filled capillary discharge waveguide that channeled relativistically-intense laser pulses (42 TW, 4.5 x 10 18 W/cm 2) over 3.3 centimeters of sufficiently low density (≃ 4.3 x 10 18/cm 3) plasma. Also demonstrated was stable self-injection and acceleration at a beam energy of ≃ 0.5 GeV by using a 225 μm diameter capillary. Relativistically-intense laser pulses (12 TW, 1.3 x 10 18W/cm 2) were guided over 3.3 centimeters of low density (≃ 3.5 x 10 18/cm 3) plasma in this experiment. A statistical analysis of the CDG-LWFAs performance was carried out. By taking advantage of the high repetition rate

  17. NONLINEAR AND FIBER OPTICS: Conversion of pulsed laser radiation from the 9.3-9.6 μm range to the second harmonic in ZnGeP2 crystals

    NASA Astrophysics Data System (ADS)

    Andreev, Yu M.; Bykanov, A. N.; Gribenyukov, A. I.; Zuev, V. V.; Karyshev, V. D.; Kisletsov, A. V.; Kovalev, I. O.; Konov, Vitalii I.; Kuz'min, G. P.; Nesterenko, A. A.; Osorgin, A. E.; Starodumov, Yu M.; Chapliev, N. I.

    1990-04-01

    A pulsed TEA CO2 laser was used in an investigation of the influence of the pump radiation parameters (mode composition, wavelength, pulse duration), of the focusing conditions, of the properties of the material (absorption coefficient), and of the operating conditions (temperature) on the efficiency of conversion to the second harmonic and on the angular dependences of phase matching in ZnGeP2 crystals. The calculated results were found to be in good agreement with the experimental data.

  18. Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition.

    PubMed

    MacLeod, J M; Cojocaru, C V; Ratto, F; Harnagea, C; Bernardi, A; Alonso, M I; Rosei, F

    2012-02-17

    The combination of nanostenciling with pulsed laser deposition (PLD) provides a flexible, fast approach for patterning the growth of Ge on Si. Within each stencilled site, the morphological evolution of the Ge structures with deposition follows a modified Stranski-Krastanov (SK) growth mode. By systematically varying the PLD parameters (laser repetition rate and number of pulses) on two different substrate orientations (111 and 100), we have observed corresponding changes in growth morphology, strain and elemental composition using scanning electron microscopy, atomic force microscopy and μ-Raman spectroscopy. The growth behaviour is well predicted within a classical SK scheme, although the Si(100) growth exhibits significant relaxation and ripening with increasing coverage. Other novel aspects of the growth include the increased thickness of the wetting layer and the kinetic control of Si/Ge intermixing via the PLD repetition rate.

  19. Atomically thin p-n junctions with van der Waals heterointerfaces.

    PubMed

    Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M; Chen, Wenchao; Li, Yilei; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Nuckolls, Colin; Heinz, Tony F; Guo, Jing; Hone, James; Kim, Philip

    2014-09-01

    Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices. In conventional p-n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their heterostructures, it is now possible to realize a p-n junction at the ultimate thickness limit. Van der Waals junctions composed of p- and n-type semiconductors--each just one unit cell thick--are predicted to exhibit completely different charge transport characteristics than bulk heterojunctions. Here, we report the characterization of the electronic and optoelectronic properties of atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides. We observe gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances the collection of the photoexcited carriers. The atomically scaled van der Waals p-n heterostructures presented here constitute the ultimate functional unit for nanoscale electronic and optoelectronic devices.

  20. Thermoelectric properties of heavily GaP- and P-doped Si0.95Ge0.05

    NASA Astrophysics Data System (ADS)

    Yamashita, Osamu

    2001-06-01

    The Seebeck coefficient S, the electrical resistivity ρ and the thermal conductivity κ of Si0.95Ge0.05 samples doped with 0.4 at. % P and/or 0.5-2.0 mol % GaP, which were prepared by a conventional arc melting method, were measured as functions of GaP content and temperature T in the range from 323 to 1208 K. When multidoped with P and GaP, Ga tends to segregate more strongly with Ge to the grain boundaries than P, while when doped with GaP alone, both P and Ga segregate equally strongly with Ge. For multidoped samples, the S values at 323 K have a minimum at 1.0 mol % GaP and then increase with additional GaP, while the values of ρ and κ decrease monotonically with increasing GaP content. The optimum additional content of GaP that gives the largest thermoelectric figures of merit (ZT=S2T/κρ) for multidoped n-type Si0.95Ge0.05 samples was 1.5 mol %, which is slightly less than the 2.0 mol % of GaP added to Si0.8Ge0.2 alloy by hot pressing. The ZT value for multidoped Si0.95Ge0.05 with an optimum content of GaP increases linearly with temperature, and at 1073 K is 18% higher than that obtained previously for Si0.95Ge0.05 doped with only 0.4 at. % P. At 1173 K the ZT value is 1.16, which corresponds to 95% of that obtained previously at the corresponding temperature for Si0.8Ge0.2 alloy doped with 2.0 mol % GaP.

  1. Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Huang, Wen-Hsien; Shen, Chang-Hong; Wang, Hsing-Hsiang

    2016-06-13

    A doping-free poly-Ge film as channel material was implemented by CVD-deposited nano-crystalline Ge and visible-light laser crystallization, which behaves as a p-type semiconductor, exhibiting holes concentration of 1.8 × 10{sup 18 }cm{sup −3} and high crystallinity (Raman FWHM ∼ 4.54 cm{sup −1}). The fabricated junctionless 7 nm-poly-Ge FinFET performs at an I{sub on}/I{sub off} ratio over 10{sup 5} and drain-induced barrier lowering of 168 mV/V. Moreover, the fast programming speed of 100 μs–1 ms and reliable retention can be obtained from the junctionless poly-Ge nonvolatile-memory. Such junctionless poly-Ge devices with low thermal budget are compatible with the conventional CMOS technology and are favorable for 3D sequential-layer integrationmore » and flexible electronics.« less

  2. The properties of Ge quantum rings deposited by pulsed laser deposition.

    PubMed

    Ma, Xiying

    2010-07-01

    SiGe ring-shape nanostructures have attracted much research interest because of the interesting morphology, mechanical, and electromagnetic properties. In this paper, we present the planar Ge nanorings with well-defined sharp edges self-assembled on Si (100) matrix prepared with pulsed laser deposition (PLD) in the present of Ar gas. The transforming mechanism of the droplets is discussed, which a dynamic deformation model has been developed to simulate the self-transforming process of the droplets. The rings were found to be formed in two steps: from droplets to cones and from cones to rings via an elastic self-deforming process, which were likely to be driven by the lateral strain of Ge/Si layers and the surface tension.

  3. Ge1-xSnx alloys synthesized by ion implantation and pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Gao, Kun; Prucnal, S.; Huebner, R.; Baehtz, C.; Skorupa, I.; Wang, Yutian; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2014-07-01

    The tunable bandgap and the high carrier mobility of Ge1-xSnx alloys stimulate a large effort for bandgap and strain engineering for Ge based materials using silicon compatible technology. In this Letter, we present the fabrication of highly mismatched Ge1-xSnx alloys by ion implantation and pulsed laser melting with Sn concentration ranging from 0.5 at. % up to 1.5 at. %. According to the structural investigations, the formed Ge1-xSnx alloys are monocrystalline with high Sn-incorporation rate. The shrinkage of the bandgap of Ge1-xSnx alloys with increasing Sn content is proven by the red-shift of the E1 and E1 + Δ1 critical points in spectroscopic ellipsometry. Our investigation provides a chip technology compatible route to prepare high quality monocrystalline Ge1-xSnx alloys.

  4. Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

    NASA Astrophysics Data System (ADS)

    Lin, Guangyang; Yi, Xiaohui; Li, Cheng; Chen, Ningli; Zhang, Lu; Chen, Songyan; Huang, Wei; Wang, Jianyuan; Xiong, Xihuan; Sun, Jiaming

    2016-10-01

    A lateral p-Si0.05Ge0.95/i-Ge/n-Si0.05Ge0.95 heterojunction light emitting diode on a silicon-on-insulator (SOI) substrate was proposed, which is profitable to achieve higher luminous extraction compared to vertical junctions. Due to the high carrier injection ratio of heterostructures and optical reflection at the SiO2/Si interface of the SOI, strong room temperature electroluminescence (EL) at around 1600 nm from the direct bandgap of i-Ge with 0.30% tensile strain was observed. The EL peak intensity of the lateral heterojunction is enhanced by ˜4 folds with a larger peak energy than that of the vertical Ge p-i-n homojunction, suggesting that the light emitting efficiency of the lateral heterojunction is effectively improved. The EL peak intensity of the lateral heterojunction, which increases quadratically with injection current density, becomes stronger for diodes with a wider i-Ge region. The CMOS compatible fabrication process of the lateral heterojunctions paves the way for the integration of the light source with the Ge metal-oxide-semiconductor field-effect-transistor.

  5. Photosensitivity study of GeS2 chalcogenide glass under femtosecond laser pulses irradiation

    NASA Astrophysics Data System (ADS)

    Ayiriveetil, Arunbabu; Sabapathy, Tamilarasan; Kar, Ajoy K.; Asokan, Sundarrajan

    2015-07-01

    The present study discusses the photosensitivity of GeS2 chalcogenide glass in response to irradiation with femtosecond pulses at 1047 nm. Bulk GeS2 glasses are prepared by conventional melt quenching technique and the amorphous nature of the glass is confirmed using X-ray diffraction. Ultrafast laser inscription technique is used to fabricate the straight channel waveguides in the glass. Single scan and multi scan waveguides are inscribed in GeS2 glasses of length 0.65 cm using a master oscillator power amplifier Yb doped fiber laser (IMRA μjewel D400) with different pulse energy and translation speed. Diameters of the inscribed waveguides are measured and its dependence on the inscription parameters such as translation speed and pulse energy is studied. Butt coupling method is used to characterize the loss measurement of the inscribed optical waveguides. The mode field image of the waveguides is captured using CCD camera and compared with the mode field image of a standard SMF-28 fibers.

  6. Molecular, Structural and Immunological Characterization of Der p 18, a Chitinase-Like House Dust Mite Allergen.

    PubMed

    Resch, Yvonne; Blatt, Katharina; Malkus, Ursula; Fercher, Christian; Swoboda, Ines; Focke-Tejkl, Margit; Chen, Kuan-Wei; Seiberler, Susanne; Mittermann, Irene; Lupinek, Christian; Rodriguez-Dominguez, Azahara; Zieglmayer, Petra; Zieglmayer, René; Keller, Walter; Krzyzanek, Vladislav; Valent, Peter; Valenta, Rudolf; Vrtala, Susanne

    2016-01-01

    The house dust mite (HDM) allergen Der p 18 belongs to the glycoside hydrolase family 18 chitinases. The relevance of Der p 18 for house dust mite allergic patients has only been partly investigated. To perform a detailed characterization of Der p 18 on a molecular, structural and immunological level. Der p 18 was expressed in E. coli, purified to homogeneity, tested for chitin-binding activity and its secondary structure was analyzed by circular dichroism. Der p 18-specific IgG antibodies were produced in rabbits to localize the allergen in mites using immunogold electron microscopy and to search for cross-reactive allergens in other allergen sources (i.e. mites, crustacea, mollusca and insects). IgE reactivity of rDer p 18 was tested with sera from clinically well characterized HDM-allergic patients (n = 98) and its allergenic activity was analyzed in basophil activation experiments. Recombinant Der p 18 was expressed and purified as a folded, biologically active protein. It shows weak chitin-binding activity and partial cross-reactivity with Der f 18 from D. farinae but not with proteins from the other tested allergen sources. The allergen was mainly localized in the peritrophic matrix of the HDM gut and to a lower extent in fecal pellets. Der p 18 reacted with IgE from 10% of mite allergic patients from Austria and showed allergenic activity when tested for basophil activation in Der p 18-sensitized patients. Der p 18 is a rather genus-specific minor allergen with weak chitin-binding activity but exhibits allergenic activity and therefore should be included in diagnostic test panels for HDM allergy.

  7. Molecular, Structural and Immunological Characterization of Der p 18, a Chitinase-Like House Dust Mite Allergen

    PubMed Central

    Resch, Yvonne; Blatt, Katharina; Malkus, Ursula; Fercher, Christian; Swoboda, Ines; Focke-Tejkl, Margit; Chen, Kuan-Wei; Seiberler, Susanne; Mittermann, Irene; Lupinek, Christian; Rodriguez-Dominguez, Azahara; Zieglmayer, Petra; Zieglmayer, René; Keller, Walter; Krzyzanek, Vladislav; Valent, Peter; Valenta, Rudolf; Vrtala, Susanne

    2016-01-01

    Background The house dust mite (HDM) allergen Der p 18 belongs to the glycoside hydrolase family 18 chitinases. The relevance of Der p 18 for house dust mite allergic patients has only been partly investigated. Objective To perform a detailed characterization of Der p 18 on a molecular, structural and immunological level. Methods Der p 18 was expressed in E. coli, purified to homogeneity, tested for chitin-binding activity and its secondary structure was analyzed by circular dichroism. Der p 18-specific IgG antibodies were produced in rabbits to localize the allergen in mites using immunogold electron microscopy and to search for cross-reactive allergens in other allergen sources (i.e. mites, crustacea, mollusca and insects). IgE reactivity of rDer p 18 was tested with sera from clinically well characterized HDM-allergic patients (n = 98) and its allergenic activity was analyzed in basophil activation experiments. Results Recombinant Der p 18 was expressed and purified as a folded, biologically active protein. It shows weak chitin-binding activity and partial cross-reactivity with Der f 18 from D. farinae but not with proteins from the other tested allergen sources. The allergen was mainly localized in the peritrophic matrix of the HDM gut and to a lower extent in fecal pellets. Der p 18 reacted with IgE from 10% of mite allergic patients from Austria and showed allergenic activity when tested for basophil activation in Der p 18-sensitized patients. Conclusion Der p 18 is a rather genus-specific minor allergen with weak chitin-binding activity but exhibits allergenic activity and therefore should be included in diagnostic test panels for HDM allergy. PMID:27548813

  8. Dopant behavior in heavily doped polycrystalline Ge1- x Sn x layers prepared with pulsed laser annealing in water

    NASA Astrophysics Data System (ADS)

    Takahashi, Kouta; Kurosawa, Masashi; Ikenoue, Hiroshi; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2018-04-01

    A low-temperature process for the formation of heavily doped polycrystalline Ge (poly-Ge) layers on insulators is required to realize next-generation electronic devices. In this study, we have systematically investigated pulsed laser annealing (PLA) in flowing water for heavily doped amorphous Ge1- x Sn x layers (x ≈ 0.02) with various dopants such as B, Al, Ga, In, P, As, and Sb on SiO2. It is found that the dopant density after PLA with a high laser energy is reduced when the oxidized dopant has a lower oxygen chemical potential than H2O. As a result, for the p-type doping of B, Al, Ga, and In, we obtained a high Hall hole density of 5 × 1019 cm-3 for PLA with a low energy. Consequently, the Hall hole mobility is limited to as low as 10 cm2 V-1 s-1. In contrast, for As and Sb doping, because the density of substitutional dopants does not decrease even after PLA with a high energy, we achieved a high Hall electron density of 6 × 1019 cm-3 and a high Hall electron mobility simultaneously. These results indicate that preventing the oxidation of dopant atoms by water is an important factor for achieving heavy doping using PLA in water.

  9. Construction of a Der p2-transgenic plant for the alleviation of airway inflammation

    PubMed Central

    Lee, CC; Ho, H; Lee, KT; Jeng, ST; Chiang, BL

    2011-01-01

    In clinical therapy, the amount of antigen administered to achieve oral tolerance for allergic diseases is large, and the cost is a major consideration. In this study, we used tobacco plants to develop a large-scale protein production system for allergen-specific immunotherapy, and we investigated the mechanisms of oral tolerance induced by a transgenic plant-derived antigen. We used plants (tobacco leaves) transgenic for the Dermatophagoides pteronyssinus 2 (Der p2) antigen to produce Der p2. Mice received total protein extract from Der p2 orally once per day over 6 days (days 0–2 and days 6–8). Mice were also sensitized and challenged with yeast-derived recombinant Der p2 (rDer p2), after which the mice were examined for airway hyper-responsiveness and airway inflammation. After sensitization and challenge with rDer p2, mice that were fed with total protein extracted from transgenic plants showed decreases in serum Der p2-specific IgE and IgG1 titers, decreased IL-5 and eotaxin levels in bronchial alveolar lavage fluid, and eosinophil infiltration in the airway. In addition, hyper-responsiveness was also decreased in mice that were fed with total protein extracted from transgenic plants, and CD4+CD25+Foxp3+ regulatory T cells were significantly increased in mediastinal and mesenteric lymph nodes. Furthermore, splenocytes isolated from transgenic plant protein-fed mice exhibited decreased proliferation and increased IL-10 secretion after stimulation with rDer p2. The data here suggest that allergen-expressing transgenic plants could be used for therapeutic purposes for allergic diseases. PMID:21602845

  10. Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

    2015-07-01

    Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

  11. Development of a Multi-GeV spectrometer for laser-plasma experiment at FLAME

    NASA Astrophysics Data System (ADS)

    Valente, P.; Anelli, F.; Bacci, A.; Batani, D.; Bellaveglia, M.; Benocci, R.; Benedetti, C.; Cacciotti, L.; Cecchetti, C. A.; Clozza, A.; Cultrera, L.; Di Pirro, G.; Drenska, N.; Faccini, R.; Ferrario, M.; Filippetto, D.; Fioravanti, S.; Gallo, A.; Gamucci, A.; Gatti, G.; Ghigo, A.; Giulietti, A.; Giulietti, D.; Gizzi, L. A.; Koester, P.; Labate, L.; Levato, T.; Lollo, V.; Londrillo, P.; Martellotti, S.; Pace, E.; Pathak, N.; Rossi, A.; Tani, F.; Serafini, L.; Turchetti, G.; Vaccarezza, C.

    2011-10-01

    The advance in laser-plasma acceleration techniques pushes the regime of the resulting accelerated particles to higher energies and intensities. In particular, the upcoming experiments with the 250 TW laser at the FLAME facility of the INFN Laboratori Nazionali di Frascati, will enter the GeV regime with more than 100 pC of electrons. At the current status of understanding of the acceleration mechanism, relatively large angular and energy spreads are expected. There is therefore the need for developing a device capable to measure the energy of electrons over three orders of magnitude (few MeV to few GeV), with still unknown angular divergences. Within the PlasmonX experiment at FLAME, a spectrometer is being constructed to perform these measurements. It is made of an electro-magnet and a screen made of scintillating fibers for the measurement of the trajectories of the particles. The large range of operation, the huge number of particles and the need to focus the divergence, present challenges in the design and construction of such a device. We present the design considerations for this spectrometer that lead to the use of scintillating fibers, multichannel photo-multipliers and a multiplexing electronics, a combination which is innovative in the field. We also present the experimental results obtained with a high intensity electron beam performed on a prototype at the LNF beam test facility.

  12. Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wu, Hong-Ming; Ho, Hao-I; Tsai, Shi-Jane

    2016-03-21

    We report on the Ge auto-doping and out-diffusion in InGaP epilayer with Cu-Pt ordering grown on 4-in. Ge substrate. Ge profiles determined from secondary ion mass spectrometry indicate that the Ge out-diffusion depth is within 100 nm. However, the edge of the wafer suffers from stronger Ge gas-phase auto-doping than the center, leading to ordering deterioration in the InGaP epilayer. In the edge, we observed a residual Cu-Pt ordering layer left beneath the surface, suggesting that the ordering deterioration takes place after the deposition rather than during the deposition and In/Ga inter-diffusion enhanced by Ge vapor-phase auto-doping is responsible for themore » deterioration. We thus propose a di-vacancy diffusion model, in which the amphoteric Ge increases the di-vacancy density, resulting in a Ge density dependent diffusion. In the model, the In/Ga inter-diffusion and Ge out-diffusion are realized by the random hopping of In/Ga host atoms and Ge atoms to di-vacancies, respectively. Simulation based on this model well fits the Ge out-diffusion profiles, suggesting its validity. By comparing the Ge diffusion coefficient obtained from the fitting and the characteristic time constant of ordering deterioration estimated from the residual ordering layer, we found that the hopping rates of Ge and the host atoms are in the same order of magnitude, indicating that di-vacancies are bound in the vicinity of Ge atoms.« less

  13. Communication: Determining the structure of the N{sub 2}Ar van der Waals complex with laser-based channel-selected Coulomb explosion

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wu, Chengyin, E-mail: cywu@pku.edu.cn; Liu, Yunquan; Gong, Qihuang

    2014-04-14

    We experimentally reconstructed the structure of the N{sub 2}Ar van der Waals complex with the technique of laser-based channel-selected Coulomb explosion imaging. The internuclear distance between the N{sub 2} center of mass and the Ar atom, i.e., the length of the van der Waals bond, was determined to be 3.88 Å from the two-body explosion channels. The angle between the van der Waals bond and the N{sub 2} principal axis was determined to be 90° from the three-body explosion channels. The reconstructed structure was contrasted with our high level ab initio calculations. The agreement demonstrated the potential application of laser-basedmore » Coulomb explosion in imaging transient molecular structure, particularly for floppy van der Waals complexes, whose structures remain difficult to be determined by conventional spectroscopic methods.« less

  14. Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

    NASA Technical Reports Server (NTRS)

    Xing, G. C.; Bachmann, Klaus J.; Posthill, J. B.; Timmons, M. L.

    1993-01-01

    The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

  15. House Dust Mite Der p 1 Effects on Sinonasal Epithelial Tight Junctions

    PubMed Central

    Henriquez, Oswaldo A.; Beste, Kyle Den; Hoddeson, Elizabeth K.; Parkos, Charles A.; Nusrat, Asma; Wise, Sarah K.

    2013-01-01

    Background Epithelial permeability is highly dependent upon the integrity of tight junctions, cell-cell adhesion complexes located at the apical aspect of the lateral membrane of polarized epithelial cells. We hypothesize that sinonasal epithelial exposure to Der p 1 house dust mite antigen decreases expression of tight junction proteins (TJPs), representing a potential mechanism for increased permeability and presentation of antigens across the sinonasal epithelial layer. Methods Confluent cultured primary human sinonasal epithelial cells were exposed to recombinant Der p 1 antigen versus control, and transepithelial resistance measurements were performed over 24 hours. Antibody staining for a panel of tight junction proteins was examined with immunofluorescence/confocal microscopy and Western blotting. Tissue for these experiments was obtained from 4 patients total. Results Der p 1 exposed sinonasal cells showed a marked decrease in transepithelial resistance when compared to control cells. In addition, results of Western immunoblot and immunofluorescent labeling demonstrated decreased expression of TJPs claudin-1 and junction adhesion molecule-A (JAM-A) in Der p 1 exposed cultured sinonasal cells versus controls. Conclusion Der p 1 antigen exposure decreases sinonasal epithelium TJP expression, most notably seen in JAM-A and claudin-1 in these preliminary experiments. This decreased TJP expression likely contributes to increased epithelial permeability and represents a potential mechanism for transepithelial antigen exposure in allergic rhinitis. PMID:23592402

  16. Ultra-bright GeV photon source via controlled electromagnetic cascades in laser-dipole waves

    NASA Astrophysics Data System (ADS)

    Gonoskov, Arkady; Bashinov, Alexey; Efimenko, Evgeny; Muraviev, Alexander; Kim, Arkady; Ilderton, Anton; Bastrakov, Sergey; Meyerov, Iosif; Marklund, Mattias; Sergeev, Alexander

    2017-10-01

    The prospect of achieving conditions for triggering strong-field QED phenomena at upcoming large-scale laser facilities raises a number of intriguing questions. What kind of new effects and interaction regimes can be accessed by basic QED phenomena? What are the minimal (optimal) requirements to trigger these effects and enter these regimes? How can we, from this, gain new fundamental knowledge or create important applications? The talk will concern the prospects of producing high fluxes of GeV photons by triggering a special type of self-sustaining cascade in the field of several colliding laser pulses that form a dipole wave. Apart from reaching the highest field strength for a given total power of laser pulses, the dipole wave enables anomalous radiative trapping that favors pair production and high-energy photon generation. An extensive theoretical analysis and 3D QED-PIC simulations indicate that the concept is feasible at upcoming large-scale laser facilities of 10 PW level and can provide an extraordinary intense source of GeV photons for novel experimental studies in nuclear and quark-nuclear physics.

  17. GeV Electrons due to a Transition from Laser Wakefield Acceleration to Plasma Wakefield Acceleration

    NASA Astrophysics Data System (ADS)

    Mo, M. Z.; Masson-Laborde, P.-E.; Ali, A.; Fourmaux, S.; Lassonde, P.; Kieffer, J.-C.; Rozmus, W.; Teychenné, D.; Fedosejevs, R.

    2014-10-01

    The Laser Wakefield Acceleration (LWFA) experiments performed with the 200 TW laser system located at the Canadian Advanced Laser Light Source facility at INRS, Varennes (Québec) observed at relatively high plasma densities (1 × 1019cm-3) electron bunches of GeV energy gain, more than double of the predicted energy using Lu's scaling law. This energy boost phenomena can be attributed to a transition from LWFA regime to a plasma wakefield acceleration (PWFA) regime. In the first stage, the acceleration mechanism is dominated by the bubble created by the laser in the regime of LWFA, leading to an injection of a large number of electrons. After propagation beyond the depletion length, where the laser pulse is depleted and it can no longer sustain the bubble anymore, the dense bunch of high energy electrons propagating inside the bubble will drive its own wakefield in the PWFA regime that can trap and accelerate a secondary population of electrons up to the GeV level. 3D particle-in-cell simulations support this analysis, and confirm the scenario.

  18. Large grain growth of Ge-rich Ge1-xSnx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

    NASA Astrophysics Data System (ADS)

    Kurosawa, Masashi; Taoka, Noriyuki; Ikenoue, Hiroshi; Nakatsuka, Osamu; Zaima, Shigeaki

    2014-02-01

    We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge1-xSnx (x < 0.02) on SiO2 crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (˜800 nmϕ) growth of Ge0.98Sn0.02 polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ˜0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

  19. Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cho, B.; Bareno, J.; Petrov, I.

    The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatommore » mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.« less

  20. Theoretical Investigations of Si-Ge Alloys in P42/ncm Phase: First-Principles Calculations

    PubMed Central

    Ma, Zhenyang; Liu, Xuhong; Yu, Xinhai; Shi, Chunlei; Yan, Fang

    2017-01-01

    The structural, mechanical, anisotropic, electronic and thermal properties of Si, Si0.667Ge0.333, Si0.333Ge0.667 and Ge in P42/ncm phase are investigated in this work. The calculations have been performed with an ultra-soft pseudopotential by using the generalized gradient approximation and local density approximation in the framework of density functional theory. The achieved results for the lattice constants and band gaps of P42/ncm-Si and P42/ncm-Ge in this research have good accordance with other results. The calculated elastic constants and elastic moduli of the Si, Si0.667Ge0.333, Si0.333Ge0.667 and Ge in P42/ncm phase are better than that of the Si, Si0.667Ge0.333, Si0.333Ge0.667 and Ge in P42/mnm phase. The Si, Si0.667Ge0.333, Si0.333Ge0.667 and Ge in P42/ncm phase exhibit varying degrees of mechanical anisotropic properties in Poisson’s ratio, shear modulus, Young’s modulus, and universal anisotropic index. The band structures of the Si, Si0.667Ge0.333, Si0.333Ge0.667 and Ge in P42/ncm phase show that they are all indirect band gap semiconductors with band gap of 1.46 eV, 1.25 eV, 1.36 eV and 1.00 eV, respectively. In addition, we also found that the minimum thermal conductivity κmin of the Si, Si0.667Ge0.333, Si0.333Ge0.667 and Ge in P42/ncm phase exhibit different degrees of anisotropic properties in (001), (010), (100) and (01¯0) planes. PMID:28772964

  1. Native Defect Related Optical Properties of ZnGeP2

    NASA Technical Reports Server (NTRS)

    Dietz, N.; Tsveybak, I.; Ruderman, W.; Wood, G.; Bachmann, K. J.

    1994-01-01

    We present photoluminescence, photoconductivity, and optical absorption spectra for ZnGeP2 crystals grown from the melt by gradient freezing and from the vapor phase by high pressure physical vapor transport (HPVT). A model of donor and acceptor related subbands in the energy gap of ZnGeP2 is introduced that explains the experimental results. The emission with peak position at 1.2 eV is attributed to residual disorder on the cation sublattice. The lower absorption upon annealing is interpreted in terms of both the reduction of the disorder on the cation sublattice and changes in the Fermi level position. The n-type conductivity of ZnGeP2 Crystals grown under Ge-deficient conditions by the HPVT is related to the presence of additional donor states.

  2. Nonstoichiometry of ZnGeP 2 crystals probed by static tensimetric method

    NASA Astrophysics Data System (ADS)

    Vasilyeva, I. G.; Nikolaev, R. E.; Verozubova, G. A.

    2010-09-01

    The nonstoichiometry of ZnGeP 2 has been determined based on the p-T dependences measured above ZnP 2-Ge samples in the temperature range of 980-1225 K by a high-sensitive and precise tensimetric static method with a quartz Bourdon gauge. Scanning of the compositional range 49-51 mol% ZnP 2 in the closed system and construction of the p-T dependences were possible due to incongruent evaporation of ZnGeP 2 and formation of volatile species Zn(g), P 4(g) and P 2(g). The maximum homogeneity range of the solid ZnGeP 2 was determined between 50.03 and 49.61 mol% ZnP 2 at a temperature of 1128 K, based on the inflection points on the p-T dependences, corresponding to transitions of the three-phase (solid-solid-vapor) equilibrium to a two-phase (solid-vapor) one and vice visa. The nonstoichiometry as the overall concentration of defects is considered to gain a better insight into the defect chemistry of ZnGeP 2.

  3. Dilepton Production in p+p, Au+Au collisions at √{sNN} = 200GeV and U+U collisions at √{sNN} = 193GeV

    NASA Astrophysics Data System (ADS)

    Brandenburg, James D.; STAR Collaboration

    2017-11-01

    In this contribution we report e+e1 spectra with various invariant mass and pT differentials in Au+Au collisions at √{sNN} = 200GeV and U+U collisions at √{sNN} = 193GeV. The structure of the t (- t ≈ pT2) distributions of these mass regions will be shown and compared with the same distributions in ultra-peripheral collisions. Additionally, this contribution discusses first measurements of μ+μ- invariant mass spectra from STAR's recently installed Muon Telescope Detector (MTD) in p+p and Au+Au collisions at √{sNN} = 200GeV.

  4. Characterization of rodlike structures in Si-Ge-GaP alloys

    NASA Astrophysics Data System (ADS)

    Srikant, V.; Jesser, W. A.; Rosi, F. D.

    1996-07-01

    High-temperature microstructure of Si-Ge alloys containing 10-15 mole % GaP were studied. Quenching the 80/20 Si-Ge alloy (80 at. % Si) from above 1125 °C and the 50/50 Si-Ge alloy (50 at. % Si) from above 1025 °C resulted in a duplex microstructure. The two-phase regions consisted of a regular array of rodlike structures (GaP) in a Si-Ge matrix whereas the monophase regions were pure Si-Ge. These rodlike structures were found to lie along the [001] direction and result in {002} spots in a [100] electron diffraction pattern. The ``rods'' were about 35 and 45 nm in diameter in the case of the 80/20 and 50/50 alloy, respectively. These structures are not stable on annealing and do not form when the solidification rate is decreased.

  5. House dust mite allergen Der p 1 effects on sinonasal epithelial tight junctions.

    PubMed

    Henriquez, Oswaldo A; Den Beste, Kyle; Hoddeson, Elizabeth K; Parkos, Charles A; Nusrat, Asma; Wise, Sarah K

    2013-08-01

    Epithelial permeability is highly dependent upon the integrity of tight junctions, which are cell-cell adhesion complexes located at the apical aspect of the lateral membrane of polarized epithelial cells. We hypothesize that sinonasal epithelial exposure to Der p 1 house dust mite antigen decreases expression of tight junction proteins (TJPs), representing a potential mechanism for increased permeability and presentation of antigens across the sinonasal epithelial layer. Confluent cultured primary human sinonasal epithelial cells were exposed to recombinant Der p 1 antigen vs control, and transepithelial resistance measurements were performed over 24 hours. Antibody staining for a panel of TJPs was examined with immunofluorescence/confocal microscopy and Western blotting. Tissue for these experiments was obtained from 4 patients total. Der p 1 exposed sinonasal cells showed a marked decrease in transepithelial resistance when compared to control cells. In addition, results of Western immunoblot and immunofluorescent labeling demonstrated decreased expression of TJPs claudin-1 and junction adhesion molecule-A (JAM-A) in Der p 1-exposed cultured sinonasal cells vs controls. Der p 1 antigen exposure decreases sinonasal epithelium TJP expression, most notably seen in JAM-A and claudin-1 in these preliminary experiments. This decreased TJP expression likely contributes to increased epithelial permeability and represents a potential mechanism for transepithelial antigen exposure in allergic rhinitis. © 2013 ARS-AAOA, LLC.

  6. Energy dependence of π, p and p¯ transverse momentum spectra for Au+Au collisions at s=62.4 and 200 GeV

    NASA Astrophysics Data System (ADS)

    STAR Collaboration; Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baumgart, S.; Belaga, V. V.; Bellingeri-Laurikainen, A.; Bellwied, R.; Benedosso, F.; Betts, R. R.; Bharadwaj, S.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Billmeier, A.; Bland, L. C.; Blyth, S.-L.; Bombara, M.; Bonner, B. E.; Botje, M.; Bouchet, J.; Brandin, A. V.; Bravar, A.; Burton, T. P.; Bystersky, M.; Cadman, R. V.; Cai, X. Z.; Caines, H.; Calderón de La Barca Sánchez, M.; Callner, J.; Catu, O.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, H. A.; Christie, W.; Chung, S. U.; Coffin, J. P.; Cormier, T. M.; Cosentino, M. R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Daugherity, M.; de Moura, M. M.; Dedovich, T. G.; Dephillips, M.; Derevschikov, A. A.; Didenko, L.; Dietel, T.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, F.; Dunin, V. B.; Dunlop, J. C.; Dutta Mazumdar, M. R.; Eckardt, V.; Edwards, W. R.; Efimov, L. G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Feng, A.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fornazier, K. S. F.; Fu, J.; Gagliardi, C. A.; Gaillard, L.; Ganti, M. S.; Garcia-Solis, E.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. G.; Gos, H.; Grebenyuk, O.; Grosnick, D.; Guertin, S. M.; Guimaraes, K. S. F. F.; Gupta, N.; Haag, B.; Hallman, T. J.; Hamed, A.; Harris, J. W.; He, W.; Heinz, M.; Henry, T. W.; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D.; Hollis, R.; Horner, M. J.; Huang, H. Z.; Hughes, E. W.; Humanic, T. J.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jia, F.; Jiang, H.; Jones, P. G.; Judd, E. G.; Kabana, S.; Kang, K.; Kapitan, J.; Kaplan, M.; Keane, D.; Kechechyan, A.; Kettler, D.; Khodyrev, V. Yu.; Kim, B. C.; Kiryluk, J.; Kisiel, A.; Kislov, E. M.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kollegger, T.; Kopytine, M.; Kotchenda, L.; Kouchpil, V.; Kowalik, K. L.; Kramer, M.; Kravtsov, P.; Kravtsov, V. I.; Krueger, K.; Kuhn, C.; Kulikov, A. I.; Kumar, A.; Kurnadi, P.; Kuznetsov, A. A.; Lamont, M. A. C.; Landgraf, J. M.; Lange, S.; Lapointe, S.; Laue, F.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C.-H.; Lehocka, S.; Levine, M. J.; Li, C.; Li, Q.; Li, Y.; Lin, G.; Lin, X.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Liu, L.; Ljubicic, T.; Llope, W. J.; Long, H.; Longacre, R. S.; Lopez-Noriega, M.; Love, W. A.; Lu, Y.; Ludlam, T.; Lynn, D.; Ma, G. L.; Ma, J. G.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Martin, L.; Matis, H. S.; Matulenko, Yu. A.; McClain, C. J.; McShane, T. S.; Melnick, Yu.; Meschanin, A.; Millane, J.; Miller, M. L.; Minaev, N. G.; Mioduszewski, S.; Mironov, C.; Mischke, A.; Mitchell, J.; Mohanty, B.; Molnar, L.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Nepali, C.; Netrakanti, P. K.; Nikitin, V. A.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okorokov, V.; Oldenburg, M.; Olson, D.; Pachr, M.; Pal, S. K.; Panebratsev, Y.; Panitkin, S. Y.; Pavlinov, A. I.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Planinic, M.; Pluta, J.; Poljak, N.; Porile, N.; Poskanzer, A. M.; Potekhin, M.; Potrebenikova, E.; Potukuchi, B. V. K. S.; Prindle, D.; Pruneau, C.; Putschke, J.; Qattan, I. A.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Razin, S. V.; Reinnarth, J.; Relyea, D.; Ridiger, A.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sarsour, M.; Savin, I.; Sazhin, P. S.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shabetai, A.; Shahaliev, E.; Shao, M.; Sharma, M.; Shen, W. Q.; Shimanskiy, S. S.; Sichtermann, E.; Simon, F.; Singaraju, R. N.; Smirnov, N.; Snellings, R.; Sorensen, P.; Sowinski, J.; Speltz, J.; Spinka, H. M.; Srivastava, B.; Stadnik, A.; Stanislaus, T. D. S.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Z.; Surrow, B.; Symons, T. J. M.; Szanto de Toledo, A.; Takahashi, J.; Tang, A. H.; Tarnowsky, T.; Thomas, J. H.; Timmins, A. R.; Timoshenko, S.; Tokarev, M.; Trainor, T. A.; Trentalange, S.; Tribble, R. E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; van Buren, G.; van der Kolk, N.; van Leeuwen, M.; Vander Molen, A. M.; Varma, R.; Vasilevski, I. M.; Vasiliev, A. N.; Vernet, R.; Vigdor, S. E.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Waggoner, W. T.; Wang, F.; Wang, G.; Wang, J. S.; Wang, X. L.; Wang, Y.; Watson, J. W.; Webb, J. C.; Westfall, G. D.; Wetzler, A.; Whitten, C., Jr.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, J.; Wu, J.; Xu, N.; Xu, Q. H.; Xu, Z.; Yepes, P.; Yoo, I.-K.; Yue, Q.; Yurevich, V. I.; Zhan, W.; Zhang, H.; Zhang, W. M.; Zhang, Y.; Zhang, Z. P.; Zhao, Y.; Zhong, C.; Zoulkarneev, R.; Zoulkarneeva, Y.; Zubarev, A. N.; Zuo, J. X.

    2007-11-01

    We study the energy dependence of the transverse momentum (p) spectra for charged pions, protons and anti-protons for Au+Au collisions at s=62.4 and 200 GeV. Data are presented at mid-rapidity (|y|<0.5) for 0.2<p<12GeV/c. In the intermediate p region (2<p<6GeV/c), the nuclear modification factor is higher at 62.4 GeV than at 200 GeV, while at higher p (p>7GeV/c) the modification is similar for both energies. The p/π and p¯/π ratios for central collisions at s=62.4GeV peak at p≃2GeV/c. In the p range where recombination is expected to dominate, the p/π ratios at 62.4 GeV are larger than at 200 GeV, while the p¯/π ratios are smaller. For p>2GeV/c, the p¯/π ratios at the two beam energies are independent of p and centrality indicating that the dependence of the p¯/π ratio on p does not change between 62.4 and 200 GeV. These findings challenge various models incorporating jet quenching and/or constituent quark coalescence.

  7. The importance of housing characteristics in determining Der p 1 levels in carpets in New Zealand homes.

    PubMed

    Wickens, K; Mason, K; Fitzharris, P; Siebers, R; Hearfield, M; Cunningham, M; Crane, J

    2001-06-01

    A previous study of homes in Wellington, New Zealand showed that having carpets on floors was the most important determinant of floor Der p 1 levels, but there was much unexplained variability between houses in carpet levels. To determine to what extent housing characteristics might explain this variability in Der p 1 levels between houses. We returned to a selection of houses with carpets and sampled living room dust from 1 square metre for 1 min and from the whole floor at 5 m(2) per min. Der p 1 levels were estimated by double monoclonal antibody ELISA and are expressed as geometric mean microg/g and microg/m(2) (95% confidence intervals). Questionnaires were used to collect information on housing characteristics. Der p 1 levels were significantly higher in the 1 square metre sample (40.0, 31.9-50.2 microg/g; 53.4, 41.4-68.9 microg/m(2)) than in the whole room (25.8, 21.3-31.1 microg/g; 5.3, 3.8-7.4 microg/m(2)). However, results from the different sampling methods were correlated (r = 0.51, P = 0.001 for microg/g and r = 0.58, P = 0.001 for microg/m(2)). After controlling for possible confounders, houses with insulation or a room or garage below the living room had approximately half the Der p 1 concentration (P = 0.05 for both samples) and the amount of Der p 1 per m(2) (P = 0.004 for the 1 square meter sample, P = 0.06 for the whole room sample) than houses without these features. Having more than two children was associated with higher levels of Der p 1 in 1 square meter, significant (P = 0.05) for microg/m(2). Carpet underlay less than 8 mm thick was associated with an almost 3-fold increase in microg/m(2) Der p 1 (P = 0.03) and a 1.6-fold increase in microg/g Der p 1 (P = 0.08) in the whole room sample, when compared with thicker carpet underlays. The presence of insulation is the single most important housing characteristic explaining the between-house variability in Der p 1 levels on carpeted living room floors.

  8. Der p 5 Crystal Structure Provides Insight into the Group 5 Dust Mite Allergens

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mueller, G.; Gosavi, R; Krahn, J

    2010-01-01

    Group 5 allergens from house dust mites elicit strong IgE antibody binding in mite-allergic patients. The structure of Der p 5 was determined by x-ray crystallography to better understand the IgE epitopes, to investigate the biologic function in mites, and to compare with the conflicting published Blo t 5 structures, designated 2JMH and 2JRK in the Protein Data Bank. Der p 5 is a three-helical bundle similar to Blo t 5, but the interactions of the helices are more similar to 2JMH than 2JRK. The crystallographic asymmetric unit contains three dimers of Der p 5 that are not exactly alike.more » Solution scattering techniques were used to assess the multimeric state of Der p 5 in vitro and showed that the predominant state was monomeric, similar to Blo t 5, but larger multimeric species are also present. In the crystal, the formation of the Der p 5 dimer creates a large hydrophobic cavity of {approx}3000 {angstrom}{sup 3} that could be a ligand-binding site. Many allergens are known to bind hydrophobic ligands, which are thought to stimulate the innate immune system and have adjuvant-like effects on IgE-mediated inflammatory responses.« less

  9. Organometallic chemical vapor deposition and characterization of ZnGeP2/GaP multiple heterostructures on GaP substrates

    NASA Technical Reports Server (NTRS)

    Xing, G. C.; Bachmann, Klaus J.

    1993-01-01

    The growth of ZnGeP2/GaP double and multiple heterostructures on GaP substrates by organometallic chemical vapor deposition is reported. These epitaxial films were deposited at a temperature of 580 C using dimethylzinc, trimethylgallium, germane, and phosphine as source gases. With appropriate deposition conditions, mirror smooth epitaxial GaP/ZnGeP2 multiple heterostructures were obtained on (001) GaP substrates. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) studies of the films showed that the interfaces are sharp and smooth. Etching study of the films showed dislocation density on the order of 5x10(exp 4)cm(sup -2). The growth rates of the GaP layers depend linearly on the flow rates of trimethylgallium. While the GaP layers crystallize in zinc-blende structure, the ZnGeP2 layers crystallize in the chalcopyrite structure as determined by (010) electron diffraction pattern. This is the first time that multiple heterostructures combining these two crystal structures were made.

  10. p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

    NASA Technical Reports Server (NTRS)

    Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

    2000-01-01

    A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

  11. Acceleration of polarized protons to 22 GeV/c and the measurement of spin-spin effects in p/sub up-arrow/+p/sub up-arrow/. -->. p+p

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Khiari, F.Z.; Cameron, P.R.; Court, G.R.

    1989-01-01

    Accelerating polarized protons to 22 GeV/c at the Brookhaven Alternating Gradient Synchro- tron required both extensive hardware modifications and a difficult commissioning process. We had to overcome 45 strong depolarizing resonances to maintain polarization up to 22 GeV/c in this strong-focusing synchrotron. At 18.5 GeV/c we measured the analyzing power A and the spin-spin correlation parameter A/sub n//sub n/ in large- P/sub perpendicular//sup 2/ proton-proton elastic scattering, using the polarized proton beam and a polarized proton target. We also obtained a high-precision measurement of A at P/sub perpendicular//sup 2/ = 0.3 (GeV/c)/sup 2/ at 13.3 GeV/c. At 18.5 GeV/c wemore » found that A/sub n//sub n/ = (-2 +- 16)% at P/sub perpendicular//sup 2/ = 4.7 (GeV/c)/sup 2/, where it was about 60% near 12 GeV at the Argonne Zero Gradient Synchrotron. This sharp change suggests that spin-spin forces may have a strong and unexpected energy dependence at high P/sub perpendicular//sup 2/.« less

  12. Characterization of an immunomodulatory Der p 2-FIP-fve fusion protein produced in transformed rice suspension cell culture.

    PubMed

    Su, Chin-Fen; Kuo, I-Chun; Chen, Peng-Wen; Huang, Chiung-Hui; Seow, See Voon; Chua, Kaw Yan; Yu, Su-May

    2012-02-01

    Der p 2, a major allergen of Dermatophagoides pteronyssinus mites, is one of the most clinically relevant allergens to allergic patients worldwide. FIP-fve protein (Fve) from the golden needle mushroom (Flammulina velutipes) is an immunomodulatory protein with potential Th1-skewed adjuvant properties. Here, we produced and immunologically evaluated a Der p 2-Fve fusion protein as a potential immunotherapeutic for allergic diseases. Using an inducible expression system in cultured rice suspension cells, the recombinant Der p 2-Fve fusion protein (designated as OsDp2Fve) was expressed in rice cells under the control of an α-amylase gene (αAmy8) promoter and secreted under sucrose starvation. OsDp2Fve was partially purified from the cultured medium. The conformation of Der p 2 in OsDp2Fve remains intact as reflected by its unaltered allergenicity, as assessed by human IgE ELISA and histamine release assays, compared to non-fusion Der p 2 protein. Furthermore, the Fve protein expressed in OsDp2Fve retains its in vitro lymphoproliferative activity but loses its hemagglutination and lymphoagglutination effects compared to the native protein. Notably, in vivo evaluation showed that mice administered with OsDp2Fve possessed an enhanced production of Der p 2-specific IgG antibodies without potentiating the production of Der p 2-specific IgE and Th2 effector cytokines in comparison with mice co-administered with native Fve and Der p 2 proteins. These results suggest that the recombinant Der p 2-Fve fusion protein produced in rice suspension cell cultures has a great potential for allergy immunotherapy.

  13. Waveguide-integrated vertical pin photodiodes of Ge fabricated on p+ and n+ Si-on-insulator layers

    NASA Astrophysics Data System (ADS)

    Ito, Kazuki; Hiraki, Tatsurou; Tsuchizawa, Tai; Ishikawa, Yasuhiko

    2017-04-01

    Vertical pin structures of Ge photodiodes (PDs) integrated with Si optical waveguides are fabricated by depositing Ge epitaxial layers on Si-on-insulator (SOI) layers, and the performances of n+-Ge/i-Ge/p+-SOI PDs are compared with those of p+-Ge/i-Ge/n+-SOI PDs. Both types of PDs show responsivities as high as 1.0 A/W at 1.55 µm, while the dark leakage current is different, which is consistent with previous reports on free-space PDs formed on bulk Si wafers. The dark current of the p+-Ge/i-Ge/n+-SOI PDs is higher by more than one order of magnitude. Taking into account the activation energies for dark current as well as the dependence on PD area, the dark current of the n+-Ge/i-Ge/p+-SOI PDs is dominated by the thermal generation of carriers via mid-gap defect levels in Ge, while for the p+-Ge/i-Ge/n+-SOI PDs, the dark current is ascribed to not only thermal generation but also other mechanisms such as locally formed conduction paths.

  14. Impurity and defect interactions during laser thermal annealing in Ge

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Milazzo, R., E-mail: ruggero.milazzo@unipd.it; De Salvador, D.; Carnera, A.

    2016-01-28

    The microscopic mechanisms involving dopants, contaminants, and defects in Ge during pulsed melting laser thermal annealing (LTA) are investigated in detail. Samples both un-implanted and implanted with As or B are processed by LTA as well as characterized in terms of chemical (1D and 3D), electrical, and strain profiling. The clustering of As is directly measured by 3D chemical profiling and correlated with its partial electrical activation along with a reduction of the lattice strain induced by As atoms. A semi-quantitative microscopic model involving the interaction with mobile As-vacancy (AsV) complexes is proposed to describe the clustering mechanism. Boron ismore » shown to follow different clustering behavior that changes with depth and marked by completely different strain levels. Oxygen penetrates from the surface into all the samples as a result of LTA and, only in un-implanted Ge, it occupies an interstitial position inducing also positive strain in the lattice. On the contrary, data suggest that the presence of As or B forces O to assume different configurations with negligible strain, through O-V or O-B interactions for the two dopant species, respectively. These data suggest that LTA does not inject a significant amount of vacancies in Ge, at variance with Si, unless As atoms or possibly other n-type dopants are present. These results have to be carefully considered for modeling the LTA process in Ge and its implementation in technology.« less

  15. Recent progress in GeSn growth and GeSn-based photonic devices

    NASA Astrophysics Data System (ADS)

    Zheng, Jun; Liu, Zhi; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

    2018-06-01

    The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content exceeds 6%. It shows great potential for laser use in optoelectronic integration circuits (OEIC) on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photodetectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the monolithic integration of Si photonic circuits by the complementary metal–oxide–semiconductor (CMOS) technology. Project supported by the Beijing Natural Science Foundation (No. 4162063) and the Youth Innovation Promotion Association of CAS (No. 2015091).

  16. First-principles investigation of quantum transport in GeP3 nanoribbon-based tunneling junctions

    NASA Astrophysics Data System (ADS)

    Wang, Qiang; Li, Jian-Wei; Wang, Bin; Nie, Yi-Hang

    2018-06-01

    Two-dimensional (2D) GeP3 has recently been theoretically proposed as a new low-dimensional material [ Nano Lett. 17(3), 1833 (2017)]. In this manuscript, we propose a first-principles calculation to investigate the quantum transport properties of several GeP3 nanoribbon-based atomic tunneling junctions. Numerical results indicate that monolayer GeP3 nanoribbons show semiconducting behavior, whereas trilayer GeP3 nanoribbons express metallic behavior owing to the strong interaction between each of the layers. This behavior is in accordance with that proposed in two-dimensional GeP3 layers. The transmission coefficient T( E) of tunneling junctions is sensitive to the connecting formation between the central monolayer GeP3 nanoribbon and the trilayer GeP3 nanoribbon at both ends. The T( E) value of the bottom-connecting tunneling junction is considerably larger than those of the middle-connecting and top-connecting ones. With increases in gate voltage, the conductances increase for the bottom-connecting and middle-connecting tunneling junctions, but decrease for the top-connecting tunneling junctions. In addition, the conductance decreases exponentially with respect to the length of the central monolayer GeP3 nanoribbon for all the tunneling junctions. I-V curves show approximately linear behavior for the bottom-connecting and middle-connecting structures, but exhibit negative differential resistance for the top-connecting structures. The physics of each phenomenon is analyzed in detail.

  17. Structural Analysis of Der p 1–Antibody Complexes and Comparison with Complexes of Proteins or Peptides with Monoclonal Antibodies

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Osinski, Tomasz; Pomés, Anna; Majorek, Karolina A.

    Der p 1 is a major allergen from the house dust mite, Dermatophagoides pteronyssinus, that belongs to the papain-like cysteine protease family. To investigate the antigenic determinants of Der p 1, we determined two crystal structures of Der p 1 in complex with the Fab fragments of mAbs 5H8 or 10B9. Epitopes for these two Der p 1–specific Abs are located in different, nonoverlapping parts of the Der p 1 molecule. Nevertheless, surface area and identity of the amino acid residues involved in hydrogen bonds between allergen and Ab are similar. The epitope for mAb 10B9 only showed a partialmore » overlap with the previously reported epitope for mAb 4C1, a cross-reactive mAb that binds Der p 1 and its homolog Der f 1 from Dermatophagoides farinae. Upon binding to Der p 1, the Fab fragment of mAb 10B9 was found to form a very rare α helix in its third CDR of the H chain. To provide an overview of the surface properties of the interfaces formed by the complexes of Der p 1–10B9 and Der p 1–5H8, along with the complexes of 4C1 with Der p 1 and Der f 1, a broad analysis of the surfaces and hydrogen bonds of all complexes of Fab–protein or Fab–peptide was performed. This work provides detailed insight into the cross-reactive and specific allergen–Ab interactions in group 1 mite allergens. The surface data of Fab–protein and Fab–peptide interfaces can be used in the design of conformational epitopes with reduced Ab binding for immunotherapy.« less

  18. Asthmatic bronchial epithelium activated by the proteolytic allergen Der p 1 increases selective dendritic cell recruitment.

    PubMed

    Pichavant, Muriel; Charbonnier, Anne-Sophie; Taront, Solenne; Brichet, Anne; Wallaert, Benoît; Pestel, Joel; Tonnel, André-Bernard; Gosset, Philippe

    2005-04-01

    Airway dendritic cells (DCs) are crucial for allergen-induced sensitization and inflammation in allergic asthma. After allergen challenge, an increased number of DCs is observed in airway epithelium from patients with allergy. Because Der p 1, a cysteine protease allergen from Dermatophagoides pteronyssinus , induces chemokine production by bronchial epithelial cells (BECs), the purpose of this investigation was to evaluate the capacity of BEC exposed to Der p 1 to recruit DCs. Chemotactic activity of BEAS-2B, a bronchial epithelial cell line, and BECs from nonatopic controls and patients with allergic asthma was evaluated on the migration of precursors, immature and mature monocyte-derived DCs (MDDCs), and CD34 + -derived Langerhans cells (LCs). C-C chemokine ligand (CCL)-2, CCL5, and C-X-C chemokine ligand 10 production by BEAS-2B and BEC was increased after Der p 1 exposure, whereas the proenzyme proDer p 1 devoid of enzymatic activity had no effect. Der p 1 stimulation of BEAS-2B and BEC from both groups increased significantly the recruitment of MDDC precursors, depending on CCL2, CCL5, and C-X-C chemokine ligand 10 production. In a reconstituted polarized epithelium, apical application of Der p 1 enhanced MDDC precursor migration into the epithelial layer. Moreover, Der p 1 stimulation of BEC from patients with asthma but not from controls increased the migration of LC precursors, mainly dependent on CCL20 secretion. No migration of immature and mature DCs was observed. These data confirmed that BECs participate in the homeostasis of the DC network present within the bronchial epithelium through the secretion of chemokines. In allergic asthma, upregulation of CCL20 production induced LC recruitment, the role of which remains to be determined.

  19. Analysis of predicted B and T-cell epitopes in Der p 23, allergen from Dermatophagoides pteronyssinus.

    PubMed

    Fanuel, Songwe; Tabesh, Saeideh; Sadroddiny, Esmaeil; Kardar, Gholam Ali

    2017-01-01

    House dust mite (HDM) allergy is the leading cause of IgE-mediated hypersensitivity. Therefore identifying potential epitopes in the Dermatophagoide pteronyssinus 23 (Der p 23), a major house dust mite allergen will aid in the development of therapeutic vaccines and diagnostic kits for HDM allergy. Experimental methods of epitope discovery have been widely exploited for the mapping of potential allergens. This study sought to use immunoinformatic methods to analyze the structure of Der p 23 for potential immunoreactive B and T-cell epitopes that could be useful for AIT and allergy diagnosis. We retrieved a Der p 23 allergen sequence from Genbank database and then analyzed it using a combination of web-based sequence analysis tools including the Immune Epitope Database (IEDB), Protparam, BCPREDS, ABCpred, BepiPred, Bcepred among others to predict the physiochemical properties and epitope spectra of the Der p 23 allergen. We then built 3D models of the predicted B-cell epitopes, T cell epitopes and Der p 23 for sequence structure homology analysis. Our results identified peptides 'TRWNEDE', 'TVHPTTTEQPDDK', and 'NDDDPTT' as immunogenic linear B-cell epitopes while 'CPSRFGYFADPKDPH' and 'CPGNTRWNEDEETCT' were found to be the most suitable T-cell epitopes that interacted well with a large number of MHC II alleles. Both epitopes had high population coverage as well as showing a 100% conservancy. These five Der p 23 epitopes are useful for AIT vaccines and HDM allergy diagnosis development.

  20. Ge p-channel tunneling FETs with steep phosphorus profile source junctions

    NASA Astrophysics Data System (ADS)

    Takaguchi, Ryotaro; Matsumura, Ryo; Katoh, Takumi; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    The solid-phase diffusion processes of three n-type dopants, i.e., phosphorus (P), arsenic (As), and antimony (Sb), from spin-on-glass (SOG) into Ge are compared. We show that P diffusion can realize both the highest impurity concentration (˜7 × 1019 cm-3) and the steepest impurity profile (˜10 nm/dec) among the cases of the three n-type dopants because the diffusion coefficient is strongly dependent on the dopant concentration. As a result, we can conclude that P is the most suitable dopant for the source formation of Ge p-channel TFETs. Using this P diffusion, we fabricate Ge p-channel TFETs with high-P-concentration and steep-P-profile source junctions and demonstrate their operation. A high ON current of ˜1.7 µA/µm is obtained at room temperature. However, the subthreshold swing and ON current/OFF current ratio are degraded by any generation-recombination-related current component. At 150 K, SSmin of ˜108 mV/dec and ON/OFF ratio of ˜3.5 × 105 are obtained.

  1. High-performance Ge p-i-n photodetector on Si substrate

    NASA Astrophysics Data System (ADS)

    Chen, Li-qun; Huang, Xiang-ying; Li, Min; Huang, Yan-hua; Wang, Yue-yun; Yan, Guang-ming; Li, Cheng

    2015-05-01

    High-performance and tensile-strained germanium (Ge) p-i-n photodetector is demonstrated on Si substrate. The epitaxial Ge layers were prepared in an ultrahigh vacuum chemical vapor deposition (UHV-CVD) system using low temperature Ge buffer technique. The devices were fabricated by in situ doping and using Si as passivation layer between Ge and metal, which can improve the ohmic contact and realize the high doping. The results show that the dark current of the photodetector with diameter of 24 μm is about 2.5×10-7 μA at the bias voltage of -1 V, and the optical responsivity is 0.1 A/W at wavelength of 1.55 μm. The 3 dB bandwidth (BW) of 4 GHz is obtained for the photodetector with diameter of 24 μm at reverse bias voltage of 1 V. The long diffusion time of minority carrier in n-type Ge and the large contact resistance in metal/Ge contacts both affect the performance of Ge photodetectors.

  2. Direct regulatory immune activity of lactic acid bacteria on Der p 1-pulsed dendritic cells from allergic patients.

    PubMed

    Pochard, Pierre; Hammad, Hamida; Ratajczak, Céline; Charbonnier-Hatzfeld, Anne-Sophie; Just, Nicolas; Tonnel, André-Bernard; Pestel, Joël

    2005-07-01

    Lactic acid bacteria (LAB) are suggested to play a regulatory role in the development of allergic reactions. However, their potential effects on dendritic cells (DCs) directing the immune polarization remain unclear. The immunologic effect of Lactobacillus plantarum NCIMB 8826 (LAB1) on monocyte-derived dendritic cells (MD-DCs) from patients allergic to house dust mite was evaluated. MD-DCs were stimulated for 24 hours with the related allergen Der p 1 in the presence or absence of LAB1. Cell-surface markers were assessed by means of FACS analysis, and the key polarizing cytokines IL-12 and IL-10 were quantified. The subsequent regulatory effect of pulsed MD-DCs on naive or memory T cells was evaluated by determining the T-cell cytokine profile. LAB1 induced the maturation of MD-DCs, even if pulsed with Der p 1. Interestingly, after incubation with LAB1 and Der p 1, MD-DCs produced higher amounts of IL-12 than Der p 1-pulsed DCs. Indeed, the T H 2 cytokine (IL-4 and IL-5) production observed when naive or memory autologous T cells were cocultured with Der p 1-pulsed MD-DCs was highly reduced in the presence of LAB1. Finally, in contrast to naive or memory T cells exposed once to Der p 1-pulsed DCs, T cells stimulated by MD-DCs pulsed with Der p 1 and LAB1 failed to produce T H 2 cytokines in response to a new stimulation with Der p 1-pulsed DCs. Thus in the presence of LAB1, MD-DCs from allergic patients tend to reorientate the T-cell response toward a beneficial T H 1 profile.

  3. Involvement of the mannose receptor in the uptake of Der p 1, a major mite allergen, by human dendritic cells.

    PubMed

    Deslée, Gaëtan; Charbonnier, Anne-Sophie; Hammad, Hamida; Angyalosi, Gerhild; Tillie-Leblond, Isabelle; Mantovani, Alberto; Tonnel, André-Bernard; Pestel, Joël

    2002-11-01

    Immature dendritic cells (DCs) take up antigens in peripheral tissues and, after antigen processing, mature to efficiently stimulate T cells in secondary lymph nodes. In allergic airway diseases DCs have been shown to be involved in the induction and maintenance of a T(H)2-type profile. The present study was undertaken to determine pathways of Der p 1 (a house dust mite allergen) uptake by human DCs and to compare Der p 1 uptake between DCs from patients with house dust mite allergy and DCs from healthy donors. Monocyte-derived DCs (MD-DCs) were obtained from patients with house dust mite allergy (n = 13) and healthy donors (n = 11). Der p 1 was labeled with rhodamine. Der p 1 uptake by MD-DCs was analyzed by means of flow cytometry and confocal microscopy. Rhodamine- labeled Der p 1 was demonstrated to be taken up by MD-DCs in a dose-, time-, and temperature- dependent manner. The involvement of the mannose receptor (MR) in the Der p 1 uptake was demonstrated by using (1) inhibitors of the MR- mediated endocytosis (mannan and blocking anti-MR mAb), which inhibited the Der p 1 uptake from 40 % to 50 %, and (2) confocal microscopy showing the colocalization of rhodamine-labeled Der p 1 with FITC-dextran. Interestingly, compared with DCs from healthy donors, DCs from allergic patients expressed more MR and were more efficient in Der p 1 uptake. These results suggest that the MR could play a key role in the Der p 1 allergen uptake by DCs and in the pathogenesis of allergic diseases in dust mite -sensitive patients.

  4. Critical behavior of the van der Waals bonded ferromagnet Fe3 -xGeTe2

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Ivanovski, V. N.; Petrovic, C.

    2017-10-01

    The critical properties of the single-crystalline van der Waals bonded ferromagnet Fe3 -xGeTe2 were investigated by bulk dc magnetization around the paramagnetic to ferromagnetic (FM) phase transition. The Fe3 -xGeTe2 single crystals grown by self-flux method with Fe deficiency x ≈0.36 exhibit bulk FM ordering below Tc=152 K. The Mössbauer spectroscopy was used to provide information on defects and local atomic environment in such crystals. Critical exponents β =0.372 (4 ) with a critical temperature Tc=151.25 (5 ) K and γ =1.265 (15 ) with Tc=151.17 (12 ) K are obtained by the Kouvel-Fisher method, whereas δ =4.50 (1 ) is obtained by a critical isotherm analysis at Tc=151 K. These critical exponents obey the Widom scaling relation δ =1 +γ /β , indicating self-consistency of the obtained values. With these critical exponents the isotherm M (H ) curves below and above the critical temperatures collapse into two independent universal branches, obeying the single scaling equation m =f±(h ) , where m and h are renormalized magnetization and field, respectively. The exponents determined in this study are close to those calculated from the results of the renormalization group approach for a heuristic model of three-dimensional Heisenberg (d =3 ,n =3 ) spins coupled with the attractive long-range interactions between spins that decay as J (r ) ≈r-(3 +σ ) with σ =1.89 .

  5. Quasi-perpetual discharge behaviour in p-type Ge-air batteries.

    PubMed

    Ocon, Joey D; Kim, Jin Won; Abrenica, Graniel Harne A; Lee, Jae Kwang; Lee, Jaeyoung

    2014-11-07

    Metal-air batteries continue to become attractive energy storage and conversion systems due to their high energy and power densities, safer chemistries, and economic viability. Semiconductor-air batteries - a term we first define here as metal-air batteries that use semiconductor anodes such as silicon (Si) and germanium (Ge) - have been introduced in recent years as new high-energy battery chemistries. In this paper, we describe the excellent doping-dependent discharge kinetics of p-type Ge anodes in a semiconductor-air cell employing a gelled KOH electrolyte. Owing to its Fermi level, n-type Ge is expected to have lower redox potential and better electronic conductivity, which could potentially lead to a higher operating voltage and better discharge kinetics. Nonetheless, discharge measurements demonstrated that this prediction is only valid at the low current regime and breaks down at the high current density region. The p-type Ge behaves extremely better at elevated currents, evident from the higher voltage, more power available, and larger practical energy density from a very long discharge time, possibly arising from the high overpotential for surface passivation. A primary semiconductor-air battery, powered by a flat p-type Ge as a multi-electron anode, exhibited an unprecedented full discharge capacity of 1302.5 mA h gGe(-1) (88% anode utilization efficiency), the highest among semiconductor-air cells, notably better than new metal-air cells with three-dimensional and nanostructured anodes, and at least two folds higher than commercial Zn-air and Al-air cells. We therefore suggest that this study be extended to doped-Si anodes, in order to pave the way for a deeper understanding on the discharge phenomena in alkaline metal-air conversion cells with semiconductor anodes for specific niche applications in the future.

  6. Advances in SiGeSn Technology

    DTIC Science & Technology

    2007-12-01

    hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and...composition and thickness of Ge0.98Sn0.02 and ~ 500 nm, respectively. GeSn also has application in band-to-band laser heterodiodes. The ternary...by adjusting the lattice constant in the buffer. A tensile-strain-induced direct gap of Ge can be used also for laser diodes and electroptical

  7. Multifunctional Binary Monolayers Ge xP y: Tunable Band Gap, Ferromagnetism, and Photocatalyst for Water Splitting.

    PubMed

    Li, Pengfei; Zhang, Wei; Li, Dongdong; Liang, Changhao; Zeng, Xiao Cheng

    2018-06-04

    The most stable structures of two-dimensional Ge x P y and Ge x As y monolayers with different stoichiometries (e.g., GeP, GeP 2 , and GeP 3 ) are explored systematically through the combination of the particle-swarm optimization technique and density functional theory optimization. For GeP 3 , we show that the newly predicted most stable C2/ m structure is 0.16 eV/atom lower in energy than the state-of-the-art P3̅m1 structure reported previously ( Nano Lett. 2017, 17, 1833). The computed electronic band structures suggest that all the stable and metastable monolayers of Ge x P y are semiconductors with highly tunable band gaps under the biaxial strain, allowing strain engineering of their band gaps within nearly the whole visible-light range. More interestingly, the hole doping can convert the C2/ m GeP 3 monolayer from nonmagnetic to ferromagnetic because of its unique valence band structure. For the GeP 2 monolayer, the predicted most stable Pmc2 1 structure is a (quasi) direct-gap semiconductor that possesses a high electron mobility of ∼800 cm 2 V -1 s -1 along the k a direction, which is much higher than that of MoS 2 (∼200 cm 2 V -1 s -1 ). More importantly, the Pmc2 1 GeP 2 monolayer not only can serve as an n-type channel material in field-effect transistors but also can be an effective catalyst for splitting water.

  8. Correlation structures from soft and semi-hard components in p-p collisions at √s =200 GeV

    DOE PAGES

    Porter, R. J.; Trainor, T. A.

    2005-02-01

    We present preliminary two-particle correlations for unidentified hadrons in p-p collisions at √s =200 GeV. On two-particle transverse rapidity space y t Ⓧ y t two distinct regions of correlated pairs are observed: a peaked structure at low y t (P t ≤ 0.4 GeV/c) and a broad structure at higher y t , where the correlation is distributed as a 2D Gaussian centered at y t1 = y t2 ≃ 2.8 (p t1 , p t2 ≃ 1.2 GeV/c). We select those regions separately, projecting correlations onto momentum- difference variables (ηΔ, φΔ), and observe structures interpretable in the contextmore » of string and parton fragmentations from soft and semi-hard components of p-p collisions.« less

  9. Particle correlations in p- anti p interactions at radical s = 1800 and 630 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Not Available

    1990-01-01

    Preliminary results on Bose-Einstein correlations and two particle pseudorapidity correlations in p{bar p} interactions at {radical}s = 1800 and 630 GeV are presented. Data were collected with a minimum- bias'' trigger with the Collider Detector at Fermilab. The size of the particle emitting source, measured via Bose-Einstein interference at {radical}s =1800 GeV, is of the order of 1 fm. The observed short-range pseudorapidity correlations, compared to lower energy data, do not show any significant energy dependence. 10 refs., 5 figs.

  10. Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

    NASA Technical Reports Server (NTRS)

    Xing, G. C.; Bachmann, K. J.; Posthill, J. B.; Timmons, M. L.

    1991-01-01

    In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

  11. Sn-based Ge/Ge{sub 0.975}Sn{sub 0.025}/Ge p-i-n photodetector operated with back-side illumination

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chang, C.; Li, H.; Huang, S. H.

    2016-04-11

    We report an investigation of a GeSn-based p-i-n photodetector grown on a Ge wafer that collects light signal from the back of the wafer. Temperature dependent absorption measurements performed over a wide temperature range (300 K down to 25 K) show that (a) absorption starts at the indirect bandgap of the active GeSn layer and continues up to the direct bandgap of the Ge wafer, and (b) the peak responsivity increases rapidly at first with decreasing temperature, then increases more slowly, followed by a decrease at the lower temperatures. The maximum responsivity happens at 125 K, which can easily be achieved with themore » use of liquid nitrogen. The temperature dependence of the photocurrent is analyzed by taking into consideration of the temperature dependence of the electron and hole mobility in the active layer, and the analysis result is in reasonable agreement with the data in the temperature regime where the rapid increase occurs. This investigation demonstrates the feasibility of a GeSn-based photodiode that can be operated with back-side illumination for applications in image sensing systems.« less

  12. Thermoelectric properties of p-type cubic and rhombohedral GeTe

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Xing, Guangzong; Sun, Jifeng; Li, Yuwei

    Here, we investigate the electronic and thermoelectric properties of GeTe in both cubic and rhombohedral phases. We find that cubic GeTe has an electronic structure with a narrow band gap that is unfavorable at high temperature, where the cubic phase is normally stable. However, cubic GeTe has electronic features that may lead to p-type performance superior to the normal rhombohedral phase at lower temperature. This is explained in part by the combination of light and heavy band character that is very effective in obtaining high thermopower and conductivity. In addition, the valence band edge carrier pockets in cubic GeTe possessmore » the largest anisotropy among cubic IV-VI analogs. These effects are stronger than the effect of band convergence in the rhombohedral structure. The results suggest further study of stabilized cubic GeTe as a thermoelectric.« less

  13. Thermoelectric properties of p-type cubic and rhombohedral GeTe

    DOE PAGES

    Xing, Guangzong; Sun, Jifeng; Li, Yuwei; ...

    2018-05-21

    Here, we investigate the electronic and thermoelectric properties of GeTe in both cubic and rhombohedral phases. We find that cubic GeTe has an electronic structure with a narrow band gap that is unfavorable at high temperature, where the cubic phase is normally stable. However, cubic GeTe has electronic features that may lead to p-type performance superior to the normal rhombohedral phase at lower temperature. This is explained in part by the combination of light and heavy band character that is very effective in obtaining high thermopower and conductivity. In addition, the valence band edge carrier pockets in cubic GeTe possessmore » the largest anisotropy among cubic IV-VI analogs. These effects are stronger than the effect of band convergence in the rhombohedral structure. The results suggest further study of stabilized cubic GeTe as a thermoelectric.« less

  14. Dense GeV electron–positron pairs generated by lasers in near-critical-density plasmas

    PubMed Central

    Zhu, Xing-Long; Yu, Tong-Pu; Sheng, Zheng-Ming; Yin, Yan; Turcu, Ion Cristian Edmond; Pukhov, Alexander

    2016-01-01

    Pair production can be triggered by high-intensity lasers via the Breit–Wheeler process. However, the straightforward laser–laser colliding for copious numbers of pair creation requires light intensities several orders of magnitude higher than possible with the ongoing laser facilities. Despite the numerous proposed approaches, creating high-energy-density pair plasmas in laboratories is still challenging. Here we present an all-optical scheme for overdense pair production by two counter-propagating lasers irradiating near-critical-density plasmas at only ∼1022 W cm−2. In this scheme, bright γ-rays are generated by radiation-trapped electrons oscillating in the laser fields. The dense γ-photons then collide with the focused counter-propagating lasers to initiate the multi-photon Breit–Wheeler process. Particle-in-cell simulations indicate that one may generate a high-yield (1.05 × 1011) overdense (4 × 1022 cm−3) GeV positron beam using 10 PW scale lasers. Such a bright pair source has many practical applications and could be basis for future compact high-luminosity electron–positron colliders. PMID:27966530

  15. The Lys-Asp-Tyr Triad within the Mite Allergen Der p 1 Propeptide Is a Critical Structural Element for the pH-Dependent Initiation of the Protease Maturation.

    PubMed

    Chevigné, Andy; Campizi, Vincenzo; Szpakowska, Martyna; Bourry, David; Dumez, Marie-Eve; Martins, José C; Matagne, André; Galleni, Moreno; Jacquet, Alain

    2017-05-20

    The major house dust mite allergen, Der p 1, is a papain-like cysteine protease expressed as an inactive precursor, proDer p 1, carrying an N-terminal propeptide with a unique structure. The maturation of the zymogen into an enzymatically-active form of Der p 1 is a multistep autocatalytic process initiated under acidic conditions through conformational changes of the propeptide, leading to the loss of its inhibitory ability and its subsequent gradual cleavage. The aims of this study were to characterize the residues present in the Der p 1 propeptide involved in the initiation of the zymogen maturation process, but also to assess the impact of acidic pH on the propeptide structure, the activity of Der p 1 and the fate of the propeptide. Using various complementary enzymatic and structural approaches, we demonstrated that a structural triad K17p-D51p-Y19p within the N-terminal domain of the propeptide is essential for its stabilization and the sensing of pH changes. Particularly, the protonation of D51p under acidic conditions unfolds the propeptide through disruption of the K17p-D51p salt bridge, reduces its inhibition capacity and unmasks the buried residues K17p and Y19p constituting the first maturation cleavage site of the zymogen. Our results also evidenced that this triad acts in a cooperative manner with other propeptide pH-responsive elements, including residues E56p and E80p, to promote the propeptide unfolding and/or to facilitate its proteolysis. Furthermore, we showed that acidic conditions modify Der p 1 proteolytic specificity and confirmed that the formation of the first intermediate represents the limiting step of the in vitro Der p 1 maturation process. Altogether, our results provide new insights into the early events of the mechanism of proDer p 1 maturation and identify a unique structural triad acting as a stabilizing and a pH-sensing regulatory element.

  16. J/ψ polarization in p + p collisions at √s = 200 GeV in STAR

    DOE PAGES

    Adamczyk, L.

    2014-10-30

    The study report on a polarization measurement of inclusive J/ψ mesons in the di-electron decay channel at mid-rapidity at 2T<6 GeV/c in p+p collisions at √s = 200 GeV. Data were taken with the STAR detector at RHIC. The J/ψ polarization measurement should help to distinguish between different models of the J/ψ production mechanism since they predict different p T dependences of the J/ψ polarization. In this analysis, J/ψ polarization is studied in the helicity frame. The polarization parameter λ θ measured at RHIC becomes smaller towards high p T, indicating more longitudinal J/ψ polarization as p T increases. Themore » result is compared with predictions of presently available models.« less

  17. Der p 1 suppresses indoleamine 2, 3-dioxygenase in dendritic cells from house dust mite-sensitive patients with asthma.

    PubMed

    Maneechotesuwan, Kittipong; Wamanuttajinda, Valla; Kasetsinsombat, Kanda; Huabprasert, Sukit; Yaikwawong, Metha; Barnes, Peter J; Wongkajornsilp, Adisak

    2009-01-01

    Indoleamine 2, 3-dioxygenase (IDO), a tryptophan-degrading enzyme in dendritic cells (DCs), mediates an immunosuppressive effect on activated T lymphocytes. However, little is known about the effect of Der p 1 on IDO in human DCs. The aim was to investigate the effect of Der p 1 on the expression and activity of IDO in monocyte-derived DCs from house dust mite (HDM)-sensitive patients with asthma. Using real-time RT-PCR and HPLC, the expression and activity of IDO were assessed in TNF-alpha-induced mature DCs from HDM-sensitive and nonatopic patients with asthma in response to Der p 1 exposure ex vivo. We also monitored the alteration of IDO activity in Der p 1-pulsed DCs after the coincubation with autologous T cells. With a reliance on its protease activity, Der p 1 suppressed functional IDO in DCs from HDM-sensitive patients with asthma but enhanced IDO activity in DCs from nonatopic patients with asthma. This suppression was maintained by the reciprocally induced IL-4 from the coculturing autologous HDM-sensitive T cells. Conversely, the upregulation of IDO activity in Der p 1-pulsed DCs was maintained by IFN-gamma released from autologous nonatopic T cells and the regulatory T-cell subset. Der p 1 pulsation to sensitive DCs failed to raise regulatory T cells but raised progenitor fractions from cloned HDM-sensitive CD4(+) cells through direct contact and soluble mediators. House dust mite-sensitive DCs exposed to Der p 1 downregulated IDO activity and tipped the T(H)1/T(H)2 cytokine balance toward IL-4, resulting in sustainable IDO suppression.

  18. Aqueous Binder Enhanced High-Performance GeP5 Anode for Lithium-Ion Batteries

    PubMed Central

    He, Jun; Wei, Yaqing; Hu, Lintong; Li, Huiqiao; Zhai, Tianyou

    2018-01-01

    GeP5 is a recently reported new anode material for lithium ion batteries (LIBs), it holds a large theoretical capacity about 2300 mAh g−1, and a high rate capability due to its bi-active components and superior conductivity. However, it undergoes a large volume change during its electrochemical alloying and de-alloying with Li, a suitable binder is necessary to stable the electrode integrity for improving cycle performance. In this work, we tried to apply aqueous binders LiPAA and NaCMC to GeP5 anode, and compared the difference in electrochemical performance between them and traditional binder PVDF. As can be seen from the test result, GeP5 can keep stable in both common organic solvents and proton solvents such as water and alcohol solvents, it meets the application requirements of aqueous binders. The electrochemistry results show that the use of LiPAA binder can significantly improve the initial Coulombic efficiency, reversible capacity, and cyclability of GeP5 anode as compared to the electrodes based on NaCMC and PVDF binders. The enhanced electrochemical performance of GeP5 electrode with LiPAA binder can be ascribed to the unique high strength long chain polymer structure of LiPAA, which also provide numerous uniform distributed carboxyl groups to form strong ester groups with active materials and copper current collector. Benefit from that, the GeP5 electrode with LiPAA can also exhibit excellent rate capability, and even at low temperature, it still shows attractive electrochemical performance. PMID:29484292

  19. Aqueous Binder Enhanced High-Performance GeP5 Anode for Lithium-Ion Batteries

    NASA Astrophysics Data System (ADS)

    He, Jun; Wei, Yaqing; Hu, Lintong; Li, Huiqiao; Zhai, Tianyou

    2018-02-01

    GeP5 is a recently reported new anode material for lithium ion batteries (LIBs), it holds a large theoretical capacity about 2300 mAh g-1, and a high rate capability due to its bi-active components and superior conductivity. However, it undergoes a large volume change during its electrochemical alloying and de-alloying with Li, a suitable binder is necessary to stable the electrode integrity for improving cycle performance. In this work, we tried to apply aqueous binders LiPAA and NaCMC to GeP5 anode, and compared the difference in electrochemical performance between them and traditional binder PVDF. As can be seen from the test result, GeP5 can keep stable in both common organic solvents and proton solvents such as water and alcohol solvents, it meets the application requirements of aqueous binders. The electrochemistry results show that the use of LiPAA binder can significantly improve the initial Coulombic efficiency, reversible capacity, and cyclability of GeP5 anode as compared to the electrodes based on NaCMC and PVDF binders. The enhanced electrochemical performance of GeP5 electrode with LiPAA binder can be ascribed to the unique high strength long chain polymer structure of LiPAA, which also provide numerous uniform distributed carboxyl groups to form strong ester groups with active meterials and copper current collector. Benefit from that, the GeP5 electrode with LiPAA can also exhibit excellent rate capability, and even at low temperature, it still shows attractive electrochemical performance.

  20. PHENIX Measurement of B → J/ψ in Cu+Au collisions at √{sNN} = 200 GeV and in p+p collisions at 200 GeV and 510 GeV

    NASA Astrophysics Data System (ADS)

    da Silva, Cesar Luiz; Phenix Collaboration

    2017-11-01

    This study is part of the RHIC program to probe properties of the Quark-Gluon Plasma medium properties using heavy quark energy loss. Part of the control of these measurements is to understand initial production of heavy quarks and how initial conditions in nucleus collisions can alter their yields. This manuscript reports the effort made by the PHENIX collaboration to measure total B-mesons yields, by looking at the fraction of muons from non-prompt J/ψ decays at displaced vertices in p+p and Cu+Au collisions. The total cross-sections of b-quarks in 200 GeV and 510 GeV p+p collisions follow the increasing trend from fixed target experiments to high energy results from the Tevatron and the LHC. Integrated pT and centrality B-meson yields in Cu+Au integrated over transverse momentum and centrality are consistent with no nuclear modification or some enhancement, in contrast to prompt J/ψ which shows a strong suppression.

  1. Comparative analysis of biological activities of Der p I-derived peptides on Fc epsilon receptor-bearing cells from Dermatophagoides pteronyssinus-sensitive patients.

    PubMed Central

    Jeannin, P; Pestel, J; Bossus, M; Lassalle, P; Tartar, A; Tonnel, A B

    1993-01-01

    The ability of four uncoupled synthetic peptides (p52-71, p117-133, p176-187, p188-199) derived from Der p I, a major allergen from the house dust mite Dermatophagoides pteronyssinus (Dpt) to stimulate Fc epsilon R+ cells from Dpt-sensitive patients was comparatively analysed. Each free peptide may specifically stimulate basophils (Fc epsilon RI+ cells) and platelets (Fc epsilon RII+ cells) from patients with significant levels of anti-Der p I IgE antibodies; p52-71 and p117-133 appear the best cell stimulation inducers. Both concentration-dependent biological activities of Der p I-peptide on Fc epsilon R+ cells are enhanced by coupling peptide to a carrier (as human serum albumin). Interestingly each Der p I-sensitive patient tested presents an individual pattern of response to peptide. Thus, from our results it appears that different Der p I sequences could be involved in the immune response to Der p I. PMID:7682161

  2. Comparative analysis of biological activities of Der p I-derived peptides on Fc epsilon receptor-bearing cells from Dermatophagoides pteronyssinus-sensitive patients.

    PubMed

    Jeannin, P; Pestel, J; Bossus, M; Lassalle, P; Tartar, A; Tonnel, A B

    1993-04-01

    The ability of four uncoupled synthetic peptides (p52-71, p117-133, p176-187, p188-199) derived from Der p I, a major allergen from the house dust mite Dermatophagoides pteronyssinus (Dpt) to stimulate Fc epsilon R+ cells from Dpt-sensitive patients was comparatively analysed. Each free peptide may specifically stimulate basophils (Fc epsilon RI+ cells) and platelets (Fc epsilon RII+ cells) from patients with significant levels of anti-Der p I IgE antibodies; p52-71 and p117-133 appear the best cell stimulation inducers. Both concentration-dependent biological activities of Der p I-peptide on Fc epsilon R+ cells are enhanced by coupling peptide to a carrier (as human serum albumin). Interestingly each Der p I-sensitive patient tested presents an individual pattern of response to peptide. Thus, from our results it appears that different Der p I sequences could be involved in the immune response to Der p I.

  3. Critical behavior of the van der Waals bonded ferromagnet Fe 3 - x GeTe 2

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, Yu; Ivanovski, V. N.; Petrovic, C.

    The critical properties of the single-crystalline van der Waals bonded ferromagnet Fe 3-xGeTe 2 were investigated by bulk dc magnetization around the paramagnetic to ferromagnetic (FM) phase transition. The Fe 3-xGeTe 2 single crystals grown by self-flux method with Fe deficiency x ≈ 0.36 exhibit bulk FM ordering below T c = 152 K. The Mössbauer spectroscopy was used to provide information on defects and local atomic environment in such crystals. Critical exponents β = 0.372(4) with a critical temperature T c= 151.25(5) K and γ = 1.265(15) with T c = 151.17(12) K are obtained by the Kouvel-Fisher method,more » whereas δ = 4.50 ( 1 ) is obtained by a critical isotherm analysis at T c = 151 K. These critical exponents obey the Widom scaling relation δ = 1 + γ / β , indicating self-consistency of the obtained values. With these critical exponents the isotherm M(H) curves below and above the critical temperatures collapse into two independent universal branches, obeying the single scaling equation m = f±(h), where m and h are renormalized magnetization and field, respectively. The exponents determined in this study are close to those calculated from the results of the renormalization group approach for a heuristic model of three-dimensional Heisenberg (d = 3,n = 3) spins coupled with the attractive long-range interactions between spins that decay as J(r) ≈ r -(3+σ) with σ = 1.89.« less

  4. Critical behavior of the van der Waals bonded ferromagnet Fe 3 - x GeTe 2

    DOE PAGES

    Liu, Yu; Ivanovski, V. N.; Petrovic, C.

    2017-10-29

    The critical properties of the single-crystalline van der Waals bonded ferromagnet Fe 3-xGeTe 2 were investigated by bulk dc magnetization around the paramagnetic to ferromagnetic (FM) phase transition. The Fe 3-xGeTe 2 single crystals grown by self-flux method with Fe deficiency x ≈ 0.36 exhibit bulk FM ordering below T c = 152 K. The Mössbauer spectroscopy was used to provide information on defects and local atomic environment in such crystals. Critical exponents β = 0.372(4) with a critical temperature T c= 151.25(5) K and γ = 1.265(15) with T c = 151.17(12) K are obtained by the Kouvel-Fisher method,more » whereas δ = 4.50 ( 1 ) is obtained by a critical isotherm analysis at T c = 151 K. These critical exponents obey the Widom scaling relation δ = 1 + γ / β , indicating self-consistency of the obtained values. With these critical exponents the isotherm M(H) curves below and above the critical temperatures collapse into two independent universal branches, obeying the single scaling equation m = f±(h), where m and h are renormalized magnetization and field, respectively. The exponents determined in this study are close to those calculated from the results of the renormalization group approach for a heuristic model of three-dimensional Heisenberg (d = 3,n = 3) spins coupled with the attractive long-range interactions between spins that decay as J(r) ≈ r -(3+σ) with σ = 1.89.« less

  5. Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

    NASA Astrophysics Data System (ADS)

    Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Otani, Yohei; Ono, Toshiro

    2011-09-01

    We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeNx/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeNx/Ge interface properties. The GeNx/Ge formed at room temperature and treated by PMA at 400 °C exhibits the best interface properties with an interface trap density of 1 × 1011 cm-2 eV-1. The GeNx/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

  6. Si/Ge elatform for lasers, amplifiers, and nonlinear optical devices based on the Raman Effect

    NASA Astrophysics Data System (ADS)

    Claps, Ricardo; Dimitropoulos, Dimitrios; Raghunathan, Varun; Fathpour, Sasan; Jalali, Bahram; Jusserand, Bernard

    2007-02-01

    The use of a silicon-germanium platform for the development of optically active devices will be discussed in this paper, from the perspective of Raman and Brillouin scattering phenomena. Silicon-Germanium is becoming a prevalent technology for the development of high speed CMOS transistors, with advances in several key parameters as high carrier mobility, low cost, and reduced manufacturing logistics. Traditionally, Si-Ge structures have been used in the optoelectronics arena as photodetectors, due to the enhanced absorption of Ge in the telecommunications band. Recent developments in Raman-based nonlinearities for devices based on a silicon-on-insulator platform have shed light on the possibility of using these effects in Si-Ge architectures. Lasing and amplification have been demonstrated using a SiGe alloy structure, and Brillouin/Raman activity from acoustic phonon modes in SiGe superlattices has been predicted. Moreover, new Raman-active branches and inhomogeneously broadened spectra result from optical phonon modes, offering new perspectives for optical device applications. The possibilities for an electrically-pumped Raman laser will be outlined, and the potential for design and development of silicon-based, Tera-Hertz wave emitters and/or receivers.

  7. Charged antiparticle to particle ratios near midrapidity in p+p collisions at √(sNN)=200GeV

    NASA Astrophysics Data System (ADS)

    Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L.; Wosiek, B.; Woźniak, K.; Wysłouch, B.; Zhang, J.

    2005-02-01

    The ratios of the yields of primary charged antiparticles to particles have been obtained for pions, kaons, and protons near midrapidity for p+p collisions at √(sNN)=200GeV. Ratios of <π-/π+>=1.000±0.012 (stat.) ±0.019 (syst.), =0.93±0.05 (stat.) ±0.03 (syst.), and <p¯/p>=0.85±0.04 (stat.) ±0.03 (syst.) have been measured. The reported values represent the ratio of the yields averaged over the rapidity range of 0.1p<0.8, and for transverse momenta of 0.1<pπ,KT<1.0GeV/c and 0.3GeV/c. Within the uncertainties, all three ratios are consistent with the values measured in d+Au collisions at the same energy. The data are compared to results from other collision systems and energies.

  8. Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

    NASA Astrophysics Data System (ADS)

    Milazzo, R.; Impellizzeri, G.; Piccinotti, D.; De Salvador, D.; Portavoce, A.; La Magna, A.; Fortunato, G.; Mangelinck, D.; Privitera, V.; Carnera, A.; Napolitani, E.

    2017-01-01

    Heavy doping of Ge is crucial for several advanced micro- and optoelectronic applications, but, at the same time, it still remains extremely challenging. Ge heavily n-type doped at a concentration of 1 × 1020 cm-3 by As ion implantation and melting laser thermal annealing (LTA) is shown here to be highly metastable. Upon post-LTA conventional thermal annealing As electrically deactivates already at 350 °C reaching an active concentration of ˜4 × 1019 cm-3. No significant As diffusion is detected up to 450 °C, where the As activation decreases further to ˜3 × 1019 cm-3. The reason for the observed detrimental deactivation was investigated by Atom Probe Tomography and in situ High Resolution X-Ray Diffraction measurements. In general, the thermal stability of heavily doped Ge layers needs to be carefully evaluated because, as shown here, deactivation might occur at very low temperatures, close to those required for low resistivity Ohmic contacting of n-type Ge.

  9. Der p 1-pulsed myeloid and plasmacytoid dendritic cells from house dust mite-sensitized allergic patients dysregulate the T cell response.

    PubMed

    Charbonnier, Anne-Sophie; Hammad, Hamida; Gosset, Philippe; Stewart, Geoffrey A; Alkan, Sefik; Tonnel, André-Bernard; Pestel, Joël

    2003-01-01

    Although reports suggest that dendritic cells (DC) are involved in the allergic reaction characterized by a T helper cell type 2 (Th2) profile, the role of myeloid (M-DC) and plasmacytoid DC (P-DC), controlling the balance Th1/Th2, remains unknown. Here, we showed that in Dermatophagoides pteronyssinus (Dpt)-sensitized allergic patients and in healthy donors, M-DC displayed a higher capacity to capture Der p 1, a major allergen of Dpt, than did P-DC. However, Der p 1-pulsed M-DC from healthy subjects overexpressed CD80 and secreted interleukin (IL)-10, whereas M-DC from allergic patients did not. In contrast, with Der p 1-pulsed P-DC from both groups, no increase in human leukocyte antigen-DR, CD80, and CD86 and no IL-10 secretion were detected. When cocultured with allogeneic naive CD4(+) T cells from healthy donors, Der p 1-pulsed M-DC from allergic patients favored a Th1 profile [interferon (IFN)-gamma(high)/IL-4(low)] and Der p 1-pulsed P-DC, a Th2 profile (IFN-gamma(low)/IL-4(high)). In healthy donors, no T cell polarization (IFN-gamma(low)/IL-4(low)) was induced by Der p 1-pulsed M-DC or P-DC, but in response to Der p 1-pulsed M-DC, T cells secreted IL-10. The neutralization of IL-10 produced by Der p 1-pulsed M-DC from healthy donors led to an inhibition of IL-10 production by T cells and a polarization toward a type 1. Thus, IL-10 produced by M-DC might be an essential mediator controlling the balance between tolerance and allergic status. In addition, P-DC could contribute to the steady state in healthy donors or to the development of a Th2 response in allergic donors.

  10. InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

    NASA Astrophysics Data System (ADS)

    Kim, T. W.; Albert, B. R.; Kimerling, L. C.; Michel, J.

    2018-02-01

    InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2-5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104-3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ˜0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9-2.4 eV varies from 16.6% to 34.3%.

  11. Laser-driven collimated tens-GeV monoenergetic protons from mass-limited target plus preformed channel

    NASA Astrophysics Data System (ADS)

    Zheng, F. L.; Wu, S. Z.; Wu, H. C.; Zhou, C. T.; Cai, H. B.; Yu, M. Y.; Tajima, T.; Yan, X. Q.; He, X. T.

    2013-01-01

    Proton acceleration by ultra-intense laser pulse irradiating a target with cross-section smaller than the laser spot size and connected to a parabolic density channel is investigated. The target splits the laser into two parallel propagating parts, which snowplow the back-side plasma electrons along their paths, creating two adjacent parallel wakes and an intense return current in the gap between them. The radiation-pressure pre-accelerated target protons trapped in the wake fields now undergo acceleration as well as collimation by the quasistatic wake electrostatic and magnetic fields. Particle-in-cell simulations show that stable long-distance acceleration can be realized, and a 30 fs monoenergetic ion beam of >10 GeV peak energy and <2° divergence can be produced by a circularly polarized laser pulse at an intensity of about 1022 W/cm2.

  12. Outstanding laser damage threshold in Li2MnGeS4 and tunable optical nonlinearity in diamond-like semiconductors.

    PubMed

    Brant, Jacilynn A; Clark, Daniel J; Kim, Yong Soo; Jang, Joon I; Weiland, Ashley; Aitken, Jennifer A

    2015-03-16

    The new Li2MnGeS4 and Li2CoSnS4 compounds result from employing a rational and simple design strategy that guides the discovery of diamond-like semiconductors (DLSs) with wide regions of optical transparency, high laser damage threshold, and efficient second-order optical nonlinearity. Single-crystal X-ray diffraction was used to solve and refine the crystal structures of Li2MnGeS4 and Li2CoSnS4, which crystallize in the noncentrosymmetric space groups Pna21 and Pn, respectively. Synchrotron X-ray powder diffraction (SXRPD) was used to assess the phase purity, and diffuse reflectance UV-vis-NIR spectroscopy was used to estimate the bandgaps of Li2MnGeS4 (Eg = 3.069(3) eV) and Li2CoSnS4 (Eg = 2.421(3) eV). In comparison with Li2FeGeS4, Li2FeSnS4, and Li2CoSnS4 DLSs, Li2MnGeS4 exhibits the widest region of optical transparency (0.60-25 μm) and phase matchability (≥1.6 μm). All four of the DLSs exhibit second-harmonic generation and are compared with the benchmark NLO material, AgGaSe2. Most remarkably, Li2MnGeS4 does not undergo two- or three-photon absorption upon exposure to a fundamental Nd:YAG beam (λ = 1.064 μm) and exhibits a laser damage threshold > 16 GW/cm(2).

  13. First results on Ge resonant laser photoionization in hollow cathode lamp

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Scarpa, Daniele, E-mail: daniele.scarpa@lnl.infn.it; Andrighetto, Alberto; Barzakh, Anatoly

    2016-02-15

    In the framework of the research and development activities of the SPES project regarding the optimization of the radioactive beam production, a dedicated experimental study has been recently started in order to investigate the possibility of in-source ionization of germanium using a set of tunable dye lasers. Germanium is one of the beams to be accelerated by the SPES ISOL facility, which is under construction at Legnaro INFN Laboratories. The three-step, two color ionization schemes have been tested using a Ge hollow cathode lamp. The slow and the fast optogalvanic signals were detected and averaged by an oscilloscope as amore » proof of the laser ionization inside the lamp. As a result, several wavelength scans across the resonances of ionization schemes were collected with the fast optogalvanic signal. Some comparisons of ionization efficiency for different ionization schemes were made. Furthermore, saturation curves of the first excitation transitions have been obtained. This investigation method and the setup built in the laser laboratory of the SPES project can be applied for the photo-ionization scheme studies also for the other possible radioactive elements.« less

  14. Transverse momentum dependence of J/ψ polarization at midrapidity in p+p collisions at s=200GeV

    NASA Astrophysics Data System (ADS)

    Adare, A.; Afanasiev, S.; Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Al-Bataineh, H.; Alexander, J.; Aoki, K.; Aphecetche, L.; Asai, J.; Atomssa, E. T.; Averbeck, R.; Awes, T. C.; Azmoun, B.; Babintsev, V.; Bai, M.; Baksay, G.; Baksay, L.; Baldisseri, A.; Barish, K. N.; Barnes, P. D.; Bassalleck, B.; Basye, A. T.; Bathe, S.; Batsouli, S.; Baublis, V.; Baumann, C.; Bazilevsky, A.; Belikov, S.; Bennett, R.; Berdnikov, A.; Berdnikov, Y.; Bickley, A. A.; Boissevain, J. G.; Borel, H.; Boyle, K.; Brooks, M. L.; Buesching, H.; Bumazhnov, V.; Bunce, G.; Butsyk, S.; Camacho, C. M.; Campbell, S.; Chang, B. S.; Chang, W. C.; Charvet, J.-L.; Chernichenko, S.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choudhury, R. K.; Chujo, T.; Chung, P.; Churyn, A.; Cianciolo, V.; Citron, Z.; Cole, B. A.; Conesa Del Valle, Z.; Constantin, P.; Csanád, M.; Csörgö, T.; Dahms, T.; Dairaku, S.; Das, K.; David, G.; Denisov, A.; D'Enterria, D.; Deshpande, A.; Desmond, E. J.; Dietzsch, O.; Dion, A.; Donadelli, M.; Drapier, O.; Drees, A.; Drees, K. A.; Dubey, A. K.; Durum, A.; Dutta, D.; Dzhordzhadze, V.; Efremenko, Y. V.; Ellinghaus, F.; Engelmore, T.; Enokizono, A.; En'Yo, H.; Esumi, S.; Eyser, K. O.; Fadem, B.; Fields, D. E.; Finger, M., Jr.; Finger, M.; Fleuret, F.; Fokin, S. L.; Fraenkel, Z.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fujiwara, K.; Fukao, Y.; Fusayasu, T.; Garishvili, I.; Glenn, A.; Gong, H.; Gonin, M.; Gosset, J.; Goto, Y.; Granier de Cassagnac, R.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gunji, T.; Gustafsson, H.-Å.; Hadj Henni, A.; Haggerty, J. S.; Hamagaki, H.; Han, R.; Hartouni, E. P.; Haruna, K.; Haslum, E.; Hayano, R.; Heffner, M.; Hemmick, T. K.; Hester, T.; He, X.; Hill, J. C.; Hohlmann, M.; Holzmann, W.; Homma, K.; Hong, B.; Horaguchi, T.; Hornback, D.; Huang, S.; Ichihara, T.; Ichimiya, R.; Ikeda, Y.; Imai, K.; Imrek, J.; Inaba, M.; Isenhower, D.; Ishihara, M.; Isobe, T.; Issah, M.; Isupov, A.; Ivanischev, D.; Jacak, B. V.; Jia, J.; Jin, J.; Johnson, B. M.; Joo, K. S.; Jouan, D.; Kajihara, F.; Kametani, S.; Kamihara, N.; Kamin, J.; Kang, J. H.; Kapustinsky, J.; Kawall, D.; Kazantsev, A. V.; Kempel, T.; Khanzadeev, A.; Kijima, K. M.; Kikuchi, J.; Kim, B. I.; Kim, D. H.; Kim, D. J.; Kim, E.; Kim, S. H.; Kinney, E.; Kiriluk, K.; Kiss, A.; Kistenev, E.; Klay, J.; Klein-Boesing, C.; Kochenda, L.; Komkov, B.; Konno, M.; Koster, J.; Kozlov, A.; Král, A.; Kravitz, A.; Kunde, G. J.; Kurita, K.; Kurosawa, M.; Kweon, M. J.; Kwon, Y.; Kyle, G. S.; Lacey, R.; Lai, Y. S.; Lajoie, J. G.; Layton, D.; Lebedev, A.; Lee, D. M.; Lee, K. B.; Lee, T.; Leitch, M. J.; Leite, M. A. L.; Lenzi, B.; Liebing, P.; Liška, T.; Litvinenko, A.; Liu, H.; Liu, M. X.; Li, X.; Love, B.; Lynch, D.; Maguire, C. F.; Makdisi, Y. I.; Malakhov, A.; Malik, M. D.; Manko, V. I.; Mannel, E.; Mao, Y.; Mašek, L.; Masui, H.; Matathias, F.; McCumber, M.; McGaughey, P. L.; Means, N.; Meredith, B.; Miake, Y.; Mikeš, P.; Miki, K.; Milov, A.; Mishra, M.; Mitchell, J. T.; Mohanty, A. K.; Morino, Y.; Morreale, A.; Morrison, D. P.; Moukhanova, T. V.; Mukhopadhyay, D.; Murata, J.; Nagamiya, S.; Nagle, J. L.; Naglis, M.; Nagy, M. I.; Nakagawa, I.; Nakamiya, Y.; Nakamura, T.; Nakano, K.; Newby, J.; Nguyen, M.; Niita, T.; Nouicer, R.; Nyanin, A. S.; O'Brien, E.; Oda, S. X.; Ogilvie, C. A.; Okada, H.; Okada, K.; Oka, M.; Onuki, Y.; Oskarsson, A.; Ouchida, M.; Ozawa, K.; Pak, R.; Palounek, A. P. T.; Pantuev, V.; Papavassiliou, V.; Park, J.; Park, W. J.; Pate, S. F.; Pei, H.; Peng, J.-C.; Pereira, H.; Peresedov, V.; Peressounko, D. Yu.; Pinkenburg, C.; Purschke, M. L.; Purwar, A. K.; Qu, H.; Rak, J.; Rakotozafindrabe, A.; Ravinovich, I.; Read, K. F.; Rembeczki, S.; Reygers, K.; Riabov, V.; Riabov, Y.; Roach, D.; Roche, G.; Rolnick, S. D.; Rosati, M.; Rosendahl, S. S. E.; Rosnet, P.; Rukoyatkin, P.; Ružička, P.; Rykov, V. L.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sakai, S.; Sakashita, K.; Samsonov, V.; Sato, T.; Sawada, S.; Sedgwick, K.; Seele, J.; Seidl, R.; Semenov, A. Yu.; Semenov, V.; Seto, R.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shoji, K.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Silvestre, C.; Sim, K. S.; Singh, B. K.; Singh, C. P.; Singh, V.; Slunečka, M.; Soldatov, A.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Staley, F.; Stankus, P. W.; Stenlund, E.; Stepanov, M.; Ster, A.; Stoll, S. P.; Sugitate, T.; Suire, C.; Sukhanov, A.; Sziklai, J.; Takagui, E. M.; Taketani, A.; Tanabe, R.; Tanaka, Y.; Tanida, K.; Tannenbaum, M. J.; Taranenko, A.; Tarján, P.; Themann, H.; Thomas, T. L.; Togawa, M.; Toia, A.; Tomášek, L.; Tomita, Y.; Torii, H.; Towell, R. S.; Tram, V.-N.; Tserruya, I.; Tsuchimoto, Y.; Vale, C.; Valle, H.; van Hecke, H. W.; Veicht, A.; Velkovska, J.; Vertesi, R.; Vinogradov, A. A.; Virius, M.; Vrba, V.; Vznuzdaev, E.; Wang, X. R.; Watanabe, Y.; Wei, F.; Wessels, J.; White, S. N.; Winter, D.; Woody, C. L.; Wysocki, M.; Xie, W.; Yamaguchi, Y. L.; Yamaura, K.; Yang, R.; Yanovich, A.; Ying, J.; Yokkaichi, S.; Young, G. R.; Younus, I.; Yushmanov, I. E.; Zajc, W. A.; Zaudtke, O.; Zhang, C.; Zhou, S.; Zolin, L.; PHENIX Collaboration

    2010-07-01

    We report the measurement of the transverse momentum dependence of inclusive J/ψ polarization in p+p collisions at s=200GeV performed by the PHENIX Experiment at the Relativistic Heavy Ion Collider. The J/ψ polarization is studied in the helicity, Gottfried-Jackson, and Collins-Soper frames for pT<5GeV/c and |y|<0.35. The polarization in the helicity and Gottfried-Jackson frames is consistent with zero for all transverse momenta, with a slight (1.8 sigma) trend towards longitudinal polarization for transverse momenta above 2GeV/c. No conclusion is allowed due to the limited acceptance in the Collins-Soper frame and the uncertainties of the current data. The results are compared to observations for other collision systems and center of mass energies and to different quarkonia production models.

  15. Indoor factors associated with concentrations of house dust mite allergen, Der p 1, in a random sample of houses in Norwich, UK.

    PubMed

    Luczynska, C; Sterne, J; Bond, J; Azima, H; Burney, P

    1998-10-01

    Studies of house dust mite allergen concentrations suggest large variations both within and between homes. It is likely that different household characteristics influence allergen levels in different locations within the house. To investigate household characteristics associated with higher concentrations of house dust mite allergen in a random sample of houses. Information on indoor environment was obtained from 158 adults aged 20-44. Dust samples were collected from their living room floor, bedroom floor and mattress. Concentrations of Der p 1, the major allergen from the house dust mite Dermatophagoides pteronyssinus, were measured by monoclonal antibody immunoassay. Associations between mite allergen concentrations and household characteristics were examined using censored-normal regression models. Factors that were related to Der p 1 (P Der p 1 was not detected in any location in 10 (6.3%) houses. Geometric mean concentrations of Der p 1 were 1.9 microg/g in living room floor dust, 1.7 microg/g in bedroom floor dust and 2.0 microg/g in mattress dust. Approximately 25% of living room floor and mattress, and over 30% of bedroom floor samples had Der p 1 concentrations greater than 10 microg/g. Household characteristics associated with Der p 1 concentrations in both living room and bedroom were floor level, extractor fan in the kitchen, and age of carpet. Living room Der p 1 concentrations were also associated with gas oven/hob, window condensation, open fires, vacuum cleaner type, smokers in the house and age of house. Bedroom Der p 1 concentrations were also associated with use of blankets and wash temperature of bedding. Mattress Der p 1 concentrations were associated with window condensation, concrete bedroom floor and age of mattress. Different household characteristics were associated with high Der p 1 concentrations in different parts of the house. These findings are relevant

  16. Non Photonic e-D{sup 0} correlations in p+p and Au+Au collisions at {radical}(S{sub NN} = 200 GeV)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Geromitsos, Artemios

    The sum of charm and beauty in Au+Au collisions at 200 GeV measured through non-photonic electrons, show similar suppression at high p{sub T} as light hadrons, in contrast to expectations based on the dead cone effect. To understand this observation, it is important to separate the charm and beauty components. Non-photonic electron-D{sup 0} and electron-hadron azimuthal angular correlations are used to disentangle the contributions from charm and beauty decays. The beauty contribution in p+p. collisions at 200 GeV is found to be comparable to charm at p{sub T}{approx}5.5 GeV, indicating that beauty may contribute significantly to the non photonic electronsmore » from heavy flavour decays in Au+Au data at high p{sub T}. Furthermore, we are employing microvertexing techniques, not used for the analysis of p+p collisions, in Au+Au collisions at 200 GeV. We present our analysis status of D{sub 0} meson reconstruction.« less

  17. Transverse Momentum Dependence of J/psi Polarization at Midrapidity in p+p Collisions at s = 200 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adare, A.; Awes, Terry C; Cianciolo, Vince

    We report the measurement of the transverse momentum dependence of inclusive J/{psi} polarization in p+p collisions at {radical}s = 200 GeV performed by the PHENIX Experiment at the Relativistic Heavy Ion Collider. The J/{psi} polarization is studied in the helicity, Gottfried-Jackson, and Collins-Soper frames for p{sub T} < 5 GeV/c and |y| < 0.35. The polarization in the helicity and Gottfried-Jackson frames is consistent with zero for all transverse momenta, with a slight (1.8 sigma) trend towards longitudinal polarization for transverse momenta above 2 GeV/c. No conclusion is allowed due to the limited acceptance in the Collins-Soper frame and themore » uncertainties of the current data. The results are compared to observations for other collision systems and center of mass energies and to different quarkonia production models.« less

  18. Quasi-monoenergetic multi-GeV electron acceleration by optimizing the spatial and spectral phases of PW laser pulses

    NASA Astrophysics Data System (ADS)

    Shin, Junghun; Kim, Hyung Taek; Pathak, V. B.; Hojbota, Calin; Lee, Seong Ku; Sung, Jae Hee; Lee, Hwang Woon; Yoon, Jin Woo; Jeon, Cheonha; Nakajima, Kazuhisa; Sylla, F.; Lifschitz, A.; Guillaume, E.; Thaury, C.; Malka, V.; Nam, Chang Hee

    2018-06-01

    Generation of high-quality electron beams from laser wakefield acceleration requires optimization of initial experimental parameters. We present here the dependence of accelerated electron beams on the temporal profile of a driving PW laser, the density, and length of an interacting medium. We have optimized the initial parameters to obtain 2.8 GeV quasi-monoenergetic electrons which can be applied further to the development of compact electron accelerators and radiations sources.

  19. Measurements of B → J / ψ at forward rapidity in p + p collisions at s = 510 GeV

    DOE PAGES

    Aidala, C.; Ajitanand, N. N.; Akiba, Y.; ...

    2017-05-02

    Inmore » this paper, we report the first measurement of the fraction of J / ψ mesons coming from Β-meson decay (F Β→ J / ψ ) in p + p collisions at s = 510 GeV . The measurement is performed using the forward silicon vertex detector and central vertex detector at PHENIX, which provide precise tracking and distance-of-closest-approach determinations, enabling the statistical separation of J / ψ due to Β-meson decays from prompt J / ψ . The measured value of F Β→ J / ψ is 8.1% ± 2.3%(stat) ± 1.9%(syst) for J / ψ with transverse momenta 0 < p T < 5 GeV / c and rapidity 1.2 < |y| < 2.2. The measured fraction F Β→ J / ψ at PHENIX is compared to values measured by other experiments at higher center of mass energies and to fixed-order-next-to-leading-logarithm and color-evaporation-model predictions. The bb cross section per unit rapidity [dσ / dy(pp → bb)] extracted from the obtained F Β→ J / ψ and the PHENIX inclusive J / ψ cross section measured at 200 GeV scaled with color-evaporation-model calculations, at the mean Β hadron rapidity y = ±1.7 in 510 GeV p + p collisions, is 3.63 +1.92 -1.70 μb. Finally, it is consistent with the fixed-order-next-to-leading-logarithm calculations.« less

  20. Measurements of B → J / ψ at forward rapidity in p + p collisions at s = 510 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aidala, C.; Ajitanand, N. N.; Akiba, Y.

    Inmore » this paper, we report the first measurement of the fraction of J / ψ mesons coming from Β-meson decay (F Β→ J / ψ ) in p + p collisions at s = 510 GeV . The measurement is performed using the forward silicon vertex detector and central vertex detector at PHENIX, which provide precise tracking and distance-of-closest-approach determinations, enabling the statistical separation of J / ψ due to Β-meson decays from prompt J / ψ . The measured value of F Β→ J / ψ is 8.1% ± 2.3%(stat) ± 1.9%(syst) for J / ψ with transverse momenta 0 < p T < 5 GeV / c and rapidity 1.2 < |y| < 2.2. The measured fraction F Β→ J / ψ at PHENIX is compared to values measured by other experiments at higher center of mass energies and to fixed-order-next-to-leading-logarithm and color-evaporation-model predictions. The bb cross section per unit rapidity [dσ / dy(pp → bb)] extracted from the obtained F Β→ J / ψ and the PHENIX inclusive J / ψ cross section measured at 200 GeV scaled with color-evaporation-model calculations, at the mean Β hadron rapidity y = ±1.7 in 510 GeV p + p collisions, is 3.63 +1.92 -1.70 μb. Finally, it is consistent with the fixed-order-next-to-leading-logarithm calculations.« less

  1. Measurements of B →J /ψ at forward rapidity in p +p collisions at √{s }=510 GeV

    NASA Astrophysics Data System (ADS)

    Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Akimoto, R.; Alexander, J.; Alfred, M.; Aoki, K.; Apadula, N.; Asano, H.; Atomssa, E. T.; Attila, A.; Awes, T. C.; Ayuso, C.; Azmoun, B.; Babintsev, V.; Bai, M.; Bai, X.; Bannier, B.; Barish, K. N.; Bathe, S.; Baublis, V.; Baumann, C.; Baumgart, S.; Bazilevsky, A.; Beaumier, M.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Black, D.; Blau, D. S.; Boer, M.; Bok, J. S.; Boyle, K.; Brooks, M. L.; Bryslawskyj, J.; Buesching, H.; Bumazhnov, V.; Butler, C.; Butsyk, S.; Campbell, S.; Canoaroman, C.; Chen, C.-H.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Choi, S.; Christiansen, P.; Chujo, T.; Cianciolo, V.; Cole, B. A.; Connors, M.; Cronin, N.; Crossette, N.; Csanád, M.; Csörgő, T.; Danley, T. W.; Datta, A.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Ding, L.; Do, J. H.; D'Orazio, L.; Drapier, O.; Drees, A.; Drees, K. A.; Dumancic, M.; Durham, J. M.; Durum, A.; Elder, T.; Engelmore, T.; Enokizono, A.; Esumi, S.; Eyser, K. O.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fleuret, F.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukao, Y.; Fukuda, Y.; Fusayasu, T.; Gainey, K.; Gal, C.; Garg, P.; Garishvili, A.; Garishvili, I.; Ge, H.; Giordano, F.; Glenn, A.; Gong, X.; Gonin, M.; Goto, Y.; Granier de Cassagnac, R.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gu, Y.; Gunji, T.; Guragain, H.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haseler, T. O. S.; Hashimoto, K.; Hayano, R.; He, X.; Hemmick, T. K.; Hester, T.; Hill, J. C.; Hill, K.; Hollis, R. S.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Ichihara, T.; Ikeda, Y.; Imai, K.; Imazu, Y.; Inaba, M.; Iordanova, A.; Isenhower, D.; Isinhue, A.; Ito, Y.; Ivanishchev, D.; Jacak, B. V.; Jeon, S. J.; Jezghani, M.; Ji, Z.; Jia, J.; Jiang, X.; Johnson, B. M.; Joo, K. S.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kamin, J.; Kanda, S.; Kang, B. H.; Kang, J. H.; Kang, J. S.; Kapukchyan, D.; Kapustinsky, J.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Key, J. A.; Khachatryan, V.; Khandai, P. K.; Khanzadeev, A.; Kijima, K. M.; Kim, C.; Kim, D. J.; Kim, E.-J.; Kim, M.; Kim, M. H.; Kim, Y.-J.; Kim, Y. K.; Kincses, D.; Kistenev, E.; Klatsky, J.; Kleinjan, D.; Kline, P.; Koblesky, T.; Kofarago, M.; Komkov, B.; Koster, J.; Kotchetkov, D.; Kotov, D.; Krizek, F.; Kudo, S.; Kurita, K.; Kurosawa, M.; Kwon, Y.; Lacey, R.; Lai, Y. S.; Lajoie, J. G.; Lallow, E. O.; Lebedev, A.; Lee, D. M.; Lee, G. H.; Lee, J.; Lee, K. B.; Lee, K. S.; Lee, S. H.; Leitch, M. J.; Leitgab, M.; Leung, Y. H.; Lewis, B.; Lewis, N. A.; Li, X.; Li, X.; Lim, S. H.; Liu, L. D.; Liu, M. X.; Loggins, V.-R.; Lokos, S.; Lynch, D.; Maguire, C. F.; Makdisi, Y. I.; Makek, M.; Manion, A.; Manko, V. I.; Mannel, E.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Meles, A.; Mendoza, M.; Meredith, B.; Miake, Y.; Mibe, T.; Mignerey, A. C.; Mihalik, D. E. M.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Miyasaka, S.; Mizuno, S.; Mohanty, A. K.; Mohapatra, S.; Moon, T.; Morrison, D. P.; Morrow, S. I. M.; Moskowitz, M.; Moukhanova, T. V.; Murakami, T.; Murata, J.; Mwai, A.; Nagae, T.; Nagai, K.; Nagamiya, S.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakamiya, Y.; Nakamura, K. R.; Nakamura, T.; Nakano, K.; Nattrass, C.; Netrakanti, P. K.; Nihashi, M.; Niida, T.; Nouicer, R.; Novák, T.; Novitzky, N.; Novotny, R.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Oide, H.; Okada, K.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ozawa, K.; Pak, R.; Pantuev, V.; Papavassiliou, V.; Park, I. H.; Park, J. S.; Park, S.; Park, S. K.; Pate, S. F.; Patel, L.; Patel, M.; Peng, J.-C.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perezlara, C. E.; Perry, J.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pisani, R. P.; Pun, A.; Purschke, M. L.; Qu, H.; Radzevich, P. V.; Rak, J.; Ravinovich, I.; Read, K. F.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richardson, E.; Richford, D.; Rinn, T.; Riveli, N.; Roach, D.; Rolnick, S. D.; Rosati, M.; Rowan, Z.; Runchey, J.; Ryu, M. S.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Sawada, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seele, J.; Seidl, R.; Sekiguchi, Y.; Sen, A.; Seto, R.; Sett, P.; Sexton, A.; Sharma, D.; Shaver, A.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shoji, K.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Singh, B. K.; Singh, C. P.; Singh, V.; Skoby, M. J.; Skolnik, M.; Slunečka, M.; Smith, K. L.; Solano, S.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Steinberg, P.; Stenlund, E.; Stepanov, M.; Ster, A.; Stoll, S. P.; Stone, M. R.; Sugitate, T.; Sukhanov, A.; Sun, J.; Syed, S.; Takahara, A.; Taketani, A.; Tanaka, Y.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarnai, G.; Tennant, E.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Tomášek, M.; Torii, H.; Towell, C. L.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vargyas, M.; Vazquez-Carson, S.; Vazquez-Zambrano, E.; Veicht, A.; Velkovska, J.; Vértesi, R.; Virius, M.; Vrba, V.; Vznuzdaev, E.; Wang, X. R.; Wang, Z.; Watanabe, D.; Watanabe, K.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; Whitaker, S.; Wolin, S.; Wong, C. P.; Woody, C. L.; Wysocki, M.; Xia, B.; Xu, C.; Xu, Q.; Yamaguchi, Y. L.; Yanovich, A.; Yin, P.; Yokkaichi, S.; Yoo, J. H.; Yoon, I.; You, Z.; Younus, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zharko, S.; Zhou, S.; Zou, L.; Phenix Collaboration

    2017-05-01

    We report the first measurement of the fraction of J /ψ mesons coming from B -meson decay (FB →J /ψ) in p +p collisions at √{s }=510 GeV . The measurement is performed using the forward silicon vertex detector and central vertex detector at PHENIX, which provide precise tracking and distance-of-closest-approach determinations, enabling the statistical separation of J /ψ due to B -meson decays from prompt J /ψ . The measured value of FB →J /ψ is 8.1 %±2.3 %(stat)±1.9 %(syst) for J /ψ with transverse momenta 0 <pT<5 GeV /c and rapidity 1.2 <|y |<2.2 . The measured fraction FB →J /ψ at PHENIX is compared to values measured by other experiments at higher center of mass energies and to fixed-order-next-to-leading-logarithm and color-evaporation-model predictions. The b b ¯ cross section per unit rapidity [d σ /d y (p p →b b ¯)] extracted from the obtained FB →J /ψ and the PHENIX inclusive J /ψ cross section measured at 200 GeV scaled with color-evaporation-model calculations, at the mean B hadron rapidity y =±1.7 in 510 GeV p +p collisions, is 3.6 3-1.70+1.92 μ b . It is consistent with the fixed-order-next-to-leading-logarithm calculations.

  2. AC transport in p-Ge/GeSi quantum well in high magnetic fields

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Drichko, I. L.; Malysh, V. A.; Smirnov, I. Yu.

    2014-08-20

    The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.3–5.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the “two-site” model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|≈4.5. It is shownmore » that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.« less

  3. A measurement of σtot(γp) at sqrt(S) = 210 GeV

    NASA Astrophysics Data System (ADS)

    Derrick, M.; Krakauer, D.; Magill, S.; Musgrave, B.; Repond, J.; Sugano, K.; Stanek, R.; Talaga, R. L.; Thron, J.; Arzarello, F.; Ayed, R.; Barbagli, G.; Bari, G.; Basile, M.; Bellagamba, L.; Boscherini, D.; Bruni, G.; Bruni, P.; Romeo, G. Cara; Castellini, G.; Chiarini, M.; Cifarelli, L.; Cindolo, F.; Ciralli, F.; Contin, A.; D'Auria, S.; Del Papa, C.; Frasconi, F.; Giusti, P.; Iacobucci, G.; Laurenti, G.; Levi, G.; Lin, Q.; Lisowski, B.; Maccarrone, G.; Margotti, A.; Massam, T.; Nania, R.; Nemoz, C.; Palmonari, F.; Sartorelli, G.; Timellini, R.; Zamora Garcia, Y.; Zichichi, A.; Bargende, A.; Barreiro, F.; Crittenden, J.; Dabbous, H.; Desch, K.; Diekmann, B.; Geerts, M.; Geitz, G.; Gutjahr, B.; Hartmann, H.; Hartmann, J.; Haun, D.; Heinloth, K.; Hilger, E.; Jakob, H.-P.; Kramarczyk, S.; Kückes, M.; Mass, A.; Mengel, S.; Mollen, J.; Müsch, H.; Paul, E.; Schattevoy, R.; Schneider, B.; Schneider, J.-L.; Wedemeyer, R.; Cassidy, A.; Cussans, D. G.; Dyce, N.; Fawcett, H. F.; Foster, B.; Gilmore, R.; Heath, G. P.; Lancaster, M.; Llewellyn, T. J.; Malos, J.; Morgado, C. J. S.; Tapper, R. J.; Wilson, S. S.; Rau, R. R.; Bernstein, A.; Caldwell, A.; Gialas, I.; Parsons, J. A.; Ritz, S.; Sciulli, F.; Straub, P. B.; Wai, L.; Yang, S.; Barillari, T.; Schioppa, M.; Susinno, G.; Burkot, W.; Chwastowski, J.; Dwuraźny, A.; Eskreys, A.; Nizioł, B.; Jakubowski, Z.; Piotrzkowski, K.; Zachara, M.; Zawiejski, L.; Borzemski, P.; Eskreys, K.; Jeleń, K.; Kisielewska, D.; Kowalski, T.; Kulka, J.; Rulikowska-Zarȩbska, E.; Suszycki, L.; Zajaç, J.; Kȩdzierski, T.; Kotański, A.; Przybycień, M.; Bauerdick, L. A. T.; Behrens, U.; Bienlein, J. K.; Coldewey, C.; Dannemann, A.; Dierks, K.; Dorth, W.; Drews, G.; Erhard, P.; Flasiński, M.; Fleck, I.; Fürtjes, A.; Gläser, R.; Göttlicher, P.; Haas, T.; Hagge, L.; Hain, W.; Hasell, D.; Hultschig, H.; Jahnen, G.; Joos, P.; Kasemann, M.; Klanner, R.; Koch, W.; Kötz, U.; Kowalski, H.; Labs, J.; Ladage, A.; Löhr, B.; Löwe, M.; Lüke, D.; Mainusch, J.; Manczak, O.; Momayezi, M.; Nickel, S.; Notz, D.; Park, I.; Pösnecker, K.-U.; Rohde, M.; Ros, E.; Schneekloth, U.; Schroeder, J.; Schulz, W.; Selonke, F.; Tscheslog, E.; Tsurugai, T.; Turkot, F.; Vogel, W.; Woeniger, T.; Wolf, G.; Youngman, C.; Grabosch, H. J.; Leich, A.; Meyer, A.; Rethfeldt, C.; Schlenstedt, S.; Casalbuoni, R.; De Curtis, S.; Dominici, D.; Francescato, A.; Nuti, M.; Pelfer, P.; Anzivino, G.; Casaccia, R.; Laakso, I.; De Pasquale, S.; Qian, S.; Votano, L.; Bamberger, A.; Freidhof, A.; Poser, T.; Söldner-Rembold, S.; Theisen, G.; Trefzger, T.; Brook, N. H.; Bussey, P. J.; Doyle, A. T.; Forbes, J. R.; Jamieson, V. A.; Raine, C.; Saxon, D. H.; Gloth, G.; Holm, U.; Kammerlocher, H.; Krebs, B.; Neumann, T.; Wick, K.; Hofmann, A.; Kröger, W.; Krüger, J.; Lohrmann, E.; Milewski, J.; Nakahata, M.; Pavel, N.; Poelz, G.; Salomon, R.; Seidman, A.; Schott, W.; Wiik, B. H.; Zetsche, F.; Bacon, T. C.; Butterworth, I.; Markou, C.; McQuillan, D.; Miller, D. B.; Mobayyen, M. M.; Prinias, A.; Vorvolakos, A.; Bienz, T.; Kreutzmann, H.; Mallik, U.; McCliment, E.; Roco, M.; Wang, M. Z.; Cloth, P.; Filges, D.; Chen, L.; Imlay, R.; Kartik, S.; Kim, H.-J.; McNeil, R. R.; Metcalf, W.; Cases, G.; Hervás, L.; Labarga, L.; del Peso, J.; Roldán, J.; Terrón, J.; de Trocóniz, J. F.; Ikraiam, F.; Mayer, J. K.; Smith, G. R.; Corriveau, F.; Gilkinson, D. J.; Hanna, D. S.; Hung, L. W.; Mitchell, J. W.; Patel, P. M.; Sinclair, L. E.; Stairs, D. G.; Ullmann, R.; Bashindzhagyan, G. L.; Ermolov, P. F.; Golubkov, Y. A.; Kuzmin, V. A.; Kuznetsov, E. N.; Savin, A. A.; Voronin, A. G.; Zotov, N. P.; Bentvelsen, S.; Dake, A.; Engelen, J.; de Jong, P.; de Jong, S.; de Kamps, M.; Kooijman, P.; Kruse, A.; van der Lugt, H.; O'Dell, V.; Straver, J.; Tenner, A.; Tiecke, H.; Uijterwaal, H.; Vermeulen, J.; Wiggers, L.; de Wolf, E.; van Woudenberg, R.; Yoshida, R.; Bylsma, B.; Durkin, L. S.; Li, C.; Ling, T. Y.; McLean, K. W.; Murray, W. N.; Park, S. K.; Romanowski, T. A.; Seidlein, R.; Blair, G. A.; Butterworth, J. M.; Byrne, A.; Cashmore, R. J.; Cooper-Sarkar, A. M.; Devenish, R. C. E.; Gingrich, D. M.; Hallam-Baker, P. M.; Harnew, N.; Khatri, T.; Long, K. R.; Luffman, P.; McArthur, I.; Morawitz, P.; Nash, J.; Smith, S. J. P.; Roocroft, N. C.; Wilson, F. F.; Abbiendi, G.; Brugnera, R.; Carlin, R.; Dal Corso, F.; De Giorgi, M.; Dosselli, U.; Fanin, C.; Gasparini, F.; Limentani, S.; Morandin, M.; Posocco, M.; Stanco, L.; Stroili, R.; Voci, C.; Lim, J. N.; Oh, B. Y.; Whitmore, J.; Bonori, M.; Contino, U.; D'Agostini, G.; Guida, M.; Iori, M.; Mari, S.; Marini, G.; Mattioli, M.; Monaldi, D.; Nigro, A.; Hart, J. C.; McCubbin, N. A.; Shah, T. P.; Short, T. L.; Barberis, E.; Cartiglia, N.; Heusch, C.; Hubbard, B.; Leslie, J.; Ng, J. S. T.; O'Shaughnessy, K.; Sadrozinski, H. F.; Seiden, A.; Badura, E.; Biltzinger, J.; Chaves, H.; Rost, M.; Seifert, R. J.; Walenta, A. H.; Weihs, W.; Zech, G.; Dagan, S.; Heifetz, R.; Levy, A.; Zer-Zion, D.; Hasegawa, T.; Hazumi, M.; Ishii, T.; Kasai, S.; Kuze, M.; Nagasawa, Y.; Nakao, M.; Okuno, H.; Tokushuku, K.; Watanabe, T.; Yamada, S.; Chiba, M.; Hamatsu, R.; Hirose, T.; Kitamura, S.; Nagayama, S.; Nakamitsu, Y.; Arneodo, M.; Costa, M.; Ferrero, M. I.; Lamberti, L.; Maselli, S.; Peroni, C.; Solano, A.; Staiano, A.; Dardo, M.; Bailey, D. C.; Bandyopadhyay, D.; Benard, F.; Bhadra, S.; Brkic, M.; Burow, B. D.; Chlebana, F. S.; Crombie, M. B.; Hartner, G. F.; Levman, G. M.; Martin, J. F.; Orr, R. S.; Prentice, J. D.; Sampson, C. R.; Stairs, G. G.; Teuscher, R. J.; Yoon, T.-S.; Bullock, F. W.; Catterall, C. D.; Giddings, J. C.; Jones, T. W.; Khan, A. M.; Lane, J. B.; Makkar, P. L.; Shaw, D.; Shulman, J.; Blankenship, K.; Kochocki, J.; Lu, B.; Mo, L. W.; Charchuła, K.; Ciborowski, J.; Gajewski, J.; Grzelak, G.; Kasprzak, M.; Krzyżanowski, M.; Muchorowski, K.; Nowak, R. J.; Pawlak, J. M.; Stojda, K.; Stopczyński, A.; Szwed, R.; Tymieniecka, T.; Walczak, R.; Wróblewski, A. K.; Zakrzewski, J. A.; Żarnecki, A. F.; Adamus, M.; Abramowicz, H.; Eisenberg, Y.; Glasman, C.; Karshon, U.; Montag, A.; Revel, D.; Ronat, E. E.; Shapira, A.; Ali, I.; Behrens, B.; Camerini, U.; Dasu, S.; Fordham, C.; Foudas, C.; Goussiou, A.; Lomperski, M.; Loveless, R. J.; Nylander, P.; Ptacek, M.; Reeder, D. D.; Smith, W. H.; Silverstein, S.; Frisken, W. R.; Furutani, K. M.; Iga, Y.; ZEUS Collaboration

    1992-10-01

    The total photoproduction cross section is determined from a measurement of electroproduction with the ZEUS detector at HERA. The Q2 values of the virtual photons are in the range 10 -7< Q2<2×10 -2 GeV 2. The γp total cross section in the γp centre of mass energy range 186-233 GeV is 154 ± 16 (stat.) ± 32 (syst.) μb.

  4. In vivo and in vitro immunomodulation of Der p 1 allergen-specific response by Lactobacillus plantarum bacteria.

    PubMed

    Hisbergues, M; Magi, M; Rigaux, P; Steuve, J; Garcia, L; Goudercourt, D; Pot, B; Pestel, J; Jacquet, A

    2007-09-01

    Lactic acid bacteria (LAB) were reported to reduce some allergic manifestations in mice and humans but their impact on the aeroallergen-dependent immune mechanisms is still debated. The potential capacities of Lactobacillus plantarum NCIMB8826 to reduce the allergic response induced by Der p 1, the major house dust mite allergen of Dermatophagoides pteronyssinus, were evaluated in vivo and in vitro. Methods First, the effect of the intranasal co-administration of LAB and purified Der p 1 allergen before a sensitization protocol was evaluated. The allergen-specific antibody and cellular responses as well as airway inflammation were measured. Second, the impact of LAB on the cytokine profile of spleens cells from Der p 1-sensitized mice was assessed. Third, upon stimulation with LAB, the levels of cytokine produced by dendritic cells derived from the bone marrow (BMDCs) of wild-type, Toll-like receptor 2 (TLR2)-, TLR4- and MyD88-KO mice were compared. Results The co-application of L. plantarum and Der p 1 induced a T-helper type 1 (Th1)-biased allergen-specific IgG response, the absence of specific IgE response and favoured the production of INF-gamma upon allergen re-stimulation. Moreover, the previous LAB administration reduced the development of bronchoalveolar lavage eosinophilia usually induced by aerosol exposure. Additionally, the studied LAB strain was shown to modify in vitro the cytokine level produced by Der p 1-sensitized spleen cells mainly towards a Th1 profile. Finally, L. plantarum stimulated high IL-12 and moderate IL-10 production in mouse BMDCs notably through the TLR2-, MyD88-dependent and TLR4-independent pathway. In vivo co-administration of probiotic LAB with Der p 1 might prevent the development of the mite allergic response. The probiotic L. plantarum was shown to display in vitro therapeutic potentials for the treatment of allergy and to trigger the immune system by a TLR2- and MyD88-dependent signalling pathway.

  5. Stable generation of GeV-class electron beams from self-guided laser-plasma channels

    NASA Astrophysics Data System (ADS)

    Hafz, Nasr A. M.; Jeong, Tae Moon; Choi, Il Woo; Lee, Seong Ku; Pae, Ki Hong; Kulagin, Victor V.; Sung, Jae Hee; Yu, Tae Jun; Hong, Kyung-Han; Hosokai, Tomonao; Cary, John R.; Ko, Do-Kyeong; Lee, Jongmin

    2008-09-01

    Table-top laser-driven plasma accelerators are gaining attention for their potential use in miniaturizing future high-energy accelerators. By irradiating gas jet targets with ultrashort intense laser pulses, the generation of quasimonoenergetic electron beams was recently observed. Currently, the stability of beam generation and the ability to scale to higher electron beam energies are critical issues for practical laser acceleration. Here, we demonstrate the first generation of stable GeV-class electron beams from stable few-millimetre-long plasma channels in a self-guided wakefield acceleration process. As primary evidence of the laser wakefield acceleration in a bubble regime, we observed a boost of both the electron beam energy and quality by reducing the plasma density and increasing the plasma length in a 1-cm-long gas jet. Subsequent three-dimensional simulations show the possibility of achieving even higher electron beam energies by minimizing plasma bubble elongation, and we anticipate dramatic increases in beam energy and quality in the near future. This will pave the way towards ultracompact, all-optical electron beam accelerators and their applications in science, technology and medicine.

  6. Strain engineering on electronic structure and carrier mobility in monolayer GeP3

    NASA Astrophysics Data System (ADS)

    Zeng, Bowen; Long, Mengqiu; Zhang, Xiaojiao; Dong, Yulan; Li, Mingjun; Yi, Yougen; Duan, Haiming

    2018-06-01

    Using density functional theory coupled with the Boltzmann transport equation with relaxation time approximation, we have studied the strain effect on the electronic structure and carrier mobility of two-dimensional monolayer GeP3. We find that the energies of valence band maximum and conduction band minimum are nearly linearly shifted with a biaxial strain in the range of  ‑4% to 6%, and the band structure experiences a remarkable transition from semiconductor to metal with the appropriate compression (‑5% strain). Under biaxial strain, the mobility of the electron and hole in monolayer GeP3 reduces and increases by more than one order of magnitude, respectively. It is suggested that it is possible to perform successive transitions from an n-type semiconductor (‑4% strain) to a good performance p-semiconductor (+6% strain) by applying strain in monolayer GeP3, which is potentially useful for flexible electronics and nanosized mechanical sensors.

  7. Electron acceleration from rest to GeV energy by chirped axicon Gaussian laser pulse in vacuum in the presence of wiggler magnetic field

    NASA Astrophysics Data System (ADS)

    Kant, Niti; Rajput, Jyoti; Singh, Arvinder

    2018-03-01

    This paper presents a scheme of electron energy enhancement by employing frequency - chirped lowest order axicon focussed radially polarised (RP) laser pulse in vacuum under the influence of wiggler magnetic field. Terawatt RP laser can be focussed down to ∼5μm by an axicon optical element, which produces an intense longitudinal electric field. This unique property of axicon focused Gaussian RP laser pulse is employed for direct electron acceleration in vacuum. A linear frequency chirp increases the time duration of laser-electron interaction, whereas, the applied magnetic wiggler helps in improving the strength of ponderomotive force v→ ×B→ and periodically deflects electron in order to keep it traversing in the accelerating phase up to longer distance. Numerical simulations have been carried out to investigate the influence of laser, frequency chirp and magnetic field parameters on electron energy enhancement. It is noticed that an electron from rest can be accelerated up to GeV energy under optimized laser and magnetic field parameters. Significant enhancement in the electron energy gain of the order of 11.2 GeV is observed with intense chirped laser pulse in the presence of wiggler magnetic field of strength 96.2 kG.

  8. The crystallization behavior of amorphous Ge2Sb2Te5 films induced by a multi-pulsed nanosecond laser

    NASA Astrophysics Data System (ADS)

    Fan, T.; Liu, F. R.; Li, W. Q.; Guo, J. C.; Wang, Y. H.; Sun, N. X.; Liu, F.

    2017-09-01

    In this paper, accumulated crystallization of amorphous Ge2Sb2Te5 (a-GST) films induced by a multi-pulsed nanosecond (ns) excimer laser was investigated by x-ray diffraction (XRD), atomic force microscopy, field-emission scanning electron microscopy, x-ray photoelectron spectroscopy (XPS) and a spectrophotometer. XRD analyses revealed that detectable crystallization was firstly observed in the preferred orientation (200), followed by the orientations (220) and (111) after two pulses. Optical contrast, determined by crystallinity as well as surface roughness, was found to retain a linear relation within the first three pulses. A layered growth mechanism from the top surface to the interior of a-GST films was used to explain the crystallization behavior induced by the multi-pulse ns laser. XPS analyses for bond rearrangement and electronic structure further suggested that the crystallization process was performed by generating new bonds of Ge-Te and Sb-Te after laser irradiations. This paper presents the potential of multi-level devices and tunable thermal emitters based on controllable crystallization of phase-change materials.

  9. Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fukuda, Yukio; Otani, Yohei; Okamoto, Hiroshi

    2011-09-26

    We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeN{sub x}/Ge interface properties. The GeN{sub x}/Ge formed at room temperature and treated by PMA at 400 deg. C exhibits the best interface properties with an interface trap density of 1 x 10{sup 11 }cm{sup -2 }eV{sup -1}. The GeN{sub x}/Ge interface is unpinned and the Fermi level at the Ge surfacemore » can move from the valence band edge to the conduction band edge.« less

  10. Effect of Ga and P dopants on the thermoelectric properties of n-type SiGe

    NASA Technical Reports Server (NTRS)

    Draper, S. L.; Vandersande, J. W.; Wood, C.; Masters, R.; Raag, V.

    1989-01-01

    The purpose of this study was to hot-press improved n-type Si80Ge20/GaP samples directly (without any heat treatment) and to confirm that a Ga/P ratio less than one increases the solubility of P and, hence, improves the power factor and Z. One of the three samples (Ga/P = 0.43) had an improvement in Z of about 20 percent between 400 and 1000 C over that for standard SiGe. This demonstrates that improved samples can be pressed directly and that a Ga/P ratio less than one is necessary. The other two samples (Ga/P = 0.33 and 0.50) had Z's equal to or less than that of standard SiGe but had a lower hot-pressing temperature than the improved sample.

  11. First-principles prediction of a promising p-type transparent conductive material CsGeCl3

    NASA Astrophysics Data System (ADS)

    Huang, Dan; Zhao, Yu-Jun; Ju, Zhi-Ping; Gan, Li-Yong; Chen, Xin-Man; Li, Chang-Sheng; Yao, Chun-mei; Guo, Jin

    2014-04-01

    Most reported p-type transparent conductive materials are Cu-based compounds such as CuAlO2 and CuCrO2. Here, we report that compounds based on ns2 cations with low binding energy can also possess high valence band maximum, which is crucial for the p-type doping according to the doping limit rules. In particular, CsGeCl3, a compound with valence band maximum from ns2 cations, is predicted as a promising p-type transparent conductive material by first-principles calculations. Our results show that the p-type defect Ge vacancy dominates its intrinsic defects with a shallow transition level, and the calculated hole effective masses are low in CsGeCl3.

  12. J /ψ production at low transverse momentum in p +p and d + Au collisions at √{sN N}=200 GeV

    NASA Astrophysics Data System (ADS)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Alekseev, I.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Attri, A.; Averichev, G. S.; Bai, X.; Bairathi, V.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandenburg, J. D.; Brandin, A. V.; Bunzarov, I.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chatterjee, A.; Chattopadhyay, S.; Chen, J. H.; Chen, X.; Cheng, J.; Cherney, M.; Christie, W.; Contin, G.; Crawford, H. J.; Das, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; di Ruzza, B.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, C. M.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Engelage, J.; Eppley, G.; Esha, R.; Evdokimov, O.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Fedorisin, J.; Feng, Z.; Filip, P.; Fisyak, Y.; Flores, C. E.; Fulek, L.; Gagliardi, C. A.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Greiner, L.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, S.; Gupta, A.; Guryn, W.; Hamad, A. I.; Hamed, A.; Haque, R.; Harris, J. W.; He, L.; Heppelmann, S.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Horvat, S.; Huang, T.; Huang, X.; Huang, B.; Huang, H. Z.; Huck, P.; Humanic, T. J.; Igo, G.; Jacobs, W. W.; Jang, H.; Jentsch, A.; Jia, J.; Jiang, K.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z. H.; Kikoła, D. P.; Kisel, I.; Kisiel, A.; Kochenda, L.; Koetke, D. D.; Kosarzewski, L. K.; Kraishan, A. F.; Kravtsov, P.; Krueger, K.; Kumar, L.; Lamont, M. A. C.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, X.; Li, C.; Li, X.; Li, Y.; Li, W.; Lin, T.; Lisa, M. A.; Liu, F.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Ma, R.; Ma, G. L.; Ma, Y. G.; Ma, L.; Magdy, N.; Majka, R.; Manion, A.; Margetis, S.; Markert, C.; Matis, H. S.; McDonald, D.; McKinzie, S.; Meehan, K.; Mei, J. C.; Minaev, N. G.; Mioduszewski, S.; Mishra, D.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nandi, B. K.; Nasim, Md.; Nayak, T. K.; Nigmatkulov, G.; Niida, T.; Nogach, L. V.; Noh, S. Y.; Novak, J.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V. A.; Olvitt, D.; Page, B. S.; Pak, R.; Pan, Y. X.; Pandit, Y.; Panebratsev, Y.; Pawlik, B.; Pei, H.; Perkins, C.; Pile, P.; Pluta, J.; Poniatowska, K.; Porter, J.; Posik, M.; Poskanzer, A. M.; Powell, C. B.; Pruthi, N. K.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Raniwala, S.; Raniwala, R.; Ray, R. L.; Reed, R.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Sakrejda, I.; Salur, S.; Sandweiss, J.; Sarkar, A.; Schambach, J.; Scharenberg, R. P.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Seger, J.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, A.; Sharma, B.; Sharma, M. K.; Shen, W. Q.; Shi, Z.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Singha, S.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Solyst, W.; Song, L.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stepanov, M.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Sumbera, M.; Summa, B.; Sun, Z.; Sun, X. M.; Sun, Y.; Surrow, B.; Svirida, D. N.; Tang, Z.; Tang, A. H.; Tarnowsky, T.; Tawfik, A.; Thäder, J.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Todoroki, T.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Tsai, O. D.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vandenbroucke, M.; Varma, R.; Vasiliev, A. N.; Vertesi, R.; Videbæk, F.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, F.; Wang, G.; Wang, J. S.; Wang, H.; Wang, Y.; Wang, Y.; Webb, G.; Webb, J. C.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y.; Xiao, Z. G.; Xie, W.; Xie, G.; Xin, K.; Xu, Y. F.; Xu, Q. H.; Xu, N.; Xu, H.; Xu, Z.; Xu, J.; Yang, S.; Yang, Y.; Yang, Y.; Yang, C.; Yang, Y.; Yang, Q.; Ye, Z.; Ye, Z.; Yepes, P.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zbroszczyk, H.; Zha, W.; Zhang, X. P.; Zhang, Y.; Zhang, J.; Zhang, J.; Zhang, S.; Zhang, S.; Zhang, Z.; Zhang, J. B.; Zhao, J.; Zhong, C.; Zhou, L.; Zhu, X.; Zoulkarneeva, Y.; Zyzak, M.; STAR Collaboration

    2016-06-01

    We report on the measurement of J /ψ production in the dielectron channel at midrapidity (|y |<1 ) in p +p and d +Au collisions at √{sN N}=200 GeV from the STAR experiment at the Relativistic Heavy Ion Collider. The transverse momentum pT spectra in p +p for pT<4 GeV /c and d +Au collisions for pT<3 GeV /c are presented. These measurements extend the STAR coverage for J /ψ production in p +p collisions to low pT. The <pT2> from the measured J /ψ invariant cross section in p +p and d +Au collisions are evaluated and compared to similar measurements at other collision energies. The nuclear modification factor for J /ψ is extracted as a function of pT and collision centrality in d +Au and compared to model calculations using the modified nuclear parton distribution function and a final-state J /ψ nuclear absorption cross section.

  13. Infrared and far-infrared laser magnetic resonance spectroscopy of the GeH radical - Determination of ground state parameters

    NASA Technical Reports Server (NTRS)

    Brown, J. M.; Evenson, K. M.; Sears, T. J.

    1985-01-01

    The GeH radical has been detected in its ground 2 Pi state in the gas phase reaction of fluorine atoms with GeH4 by laser magnetic resonance techniques. Rotational transitions within both 2 Pi 1/2 and 2 Pi 3/2 manifolds have been observed at far-infrared wavelengths and rotational transitions between the two fine structure components have been detected at infrared wavelengths (10 microns). Signals have been observed for all five naturally occurring isotopes of germanium. Nuclear hyperfine structure for H-1 and Ge-73 has also been observed. The data for the dominant isotope (/Ge-74/H) have been fitted to within experimental error by an effective Hamiltonian to give a set of molecular parameters for the X 2 Pi state which is very nearly complete. In addition, the dipole moment of GeH in its ground state has been estimated from the relative intensities of electric and magnetic dipole transitions in the 10 micron spectrum to be 1.24(+ or - 0.10) D.

  14. Electronic structure and dynamics of thin Ge/GaAs(110) heterostructures

    NASA Astrophysics Data System (ADS)

    Haight, R.; Silberman, J. A.

    1990-10-01

    Using angle-resolved picosecond laser photoemission we have investigated both occupied and transiently excited empty states at the surface of Ge grown epitaxially on GaAs(110). We observe a normally unoccupied, Ge layer derived state whose separation from the valence-band maximum of the system is 700±50 meV at six monolayers Ge coverage. The evolution of the electronic structure is followed as a function of coverage and correlated with low-energy electron diffraction. The time dependence of the transiently occupied Ge signal is compared with that of the clean GaAs(110) surface and shows that electrons are p>prevented from diffusing into the GaAs bulk by the conduction-band offset of 330±40 meV.

  15. Transverse momentum dependence of J/{psi} polarization at midrapidity in p+p collisions at {radical}(s)=200 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adare, A.; Bickley, A. A.; Ellinghaus, F.

    We report the measurement of the transverse momentum dependence of inclusive J/{psi} polarization in p+p collisions at {radical}(s)=200 GeV performed by the PHENIX Experiment at the Relativistic Heavy Ion Collider. The J/{psi} polarization is studied in the helicity, Gottfried-Jackson, and Collins-Soper frames for p{sub T}<5 GeV/c and |y|<0.35. The polarization in the helicity and Gottfried-Jackson frames is consistent with zero for all transverse momenta, with a slight (1.8 sigma) trend towards longitudinal polarization for transverse momenta above 2 GeV/c. No conclusion is allowed due to the limited acceptance in the Collins-Soper frame and the uncertainties of the current data. Themore » results are compared to observations for other collision systems and center of mass energies and to different quarkonia production models.« less

  16. Laser recrystallization and inscription of compositional microstructures in crystalline SiGe-core fibres

    PubMed Central

    Coucheron, David A.; Fokine, Michael; Patil, Nilesh; Breiby, Dag Werner; Buset, Ole Tore; Healy, Noel; Peacock, Anna C.; Hawkins, Thomas; Jones, Max; Ballato, John; Gibson, Ursula J.

    2016-01-01

    Glass fibres with silicon cores have emerged as a versatile platform for all-optical processing, sensing and microscale optoelectronic devices. Using SiGe in the core extends the accessible wavelength range and potential optical functionality because the bandgap and optical properties can be tuned by changing the composition. However, silicon and germanium segregate unevenly during non-equilibrium solidification, presenting new fabrication challenges, and requiring detailed studies of the alloy crystallization dynamics in the fibre geometry. We report the fabrication of SiGe-core optical fibres, and the use of CO2 laser irradiation to heat the glass cladding and recrystallize the core, improving optical transmission. We observe the ramifications of the classic models of solidification at the microscale, and demonstrate suppression of constitutional undercooling at high solidification velocities. Tailoring the recrystallization conditions allows formation of long single crystals with uniform composition, as well as fabrication of compositional microstructures, such as gratings, within the fibre core. PMID:27775066

  17. Laser recrystallization and inscription of compositional microstructures in crystalline SiGe-core fibres

    NASA Astrophysics Data System (ADS)

    Coucheron, David A.; Fokine, Michael; Patil, Nilesh; Breiby, Dag Werner; Buset, Ole Tore; Healy, Noel; Peacock, Anna C.; Hawkins, Thomas; Jones, Max; Ballato, John; Gibson, Ursula J.

    2016-10-01

    Glass fibres with silicon cores have emerged as a versatile platform for all-optical processing, sensing and microscale optoelectronic devices. Using SiGe in the core extends the accessible wavelength range and potential optical functionality because the bandgap and optical properties can be tuned by changing the composition. However, silicon and germanium segregate unevenly during non-equilibrium solidification, presenting new fabrication challenges, and requiring detailed studies of the alloy crystallization dynamics in the fibre geometry. We report the fabrication of SiGe-core optical fibres, and the use of CO2 laser irradiation to heat the glass cladding and recrystallize the core, improving optical transmission. We observe the ramifications of the classic models of solidification at the microscale, and demonstrate suppression of constitutional undercooling at high solidification velocities. Tailoring the recrystallization conditions allows formation of long single crystals with uniform composition, as well as fabrication of compositional microstructures, such as gratings, within the fibre core.

  18. Laser-induced phase transitions of Ge2Sb2Te5 thin films used in optical and electronic data storage and in thermal lithography.

    PubMed

    Chu, Cheng Hung; Shiue, Chiun Da; Cheng, Hsuen Wei; Tseng, Ming Lun; Chiang, Hai-Pang; Mansuripur, Masud; Tsai, Din Ping

    2010-08-16

    Amorphous thin films of Ge(2)Sb(2)Te(5), sputter-deposited on a ZnS-SiO(2) dielectric layer, are investigated for the purpose of understanding the structural phase-transitions that occur under the influence of tightly-focused laser beams. Selective chemical etching of recorded marks in conjunction with optical, atomic force, and electron microscopy as well as local electron diffraction analysis are used to discern the complex structural features created under a broad range of laser powers and pulse durations. Clarifying the nature of phase transitions associated with laser-recorded marks in chalcogenide Ge(2)Sb(2)Te(5) thin films provides useful information for reversible optical and electronic data storage, as well as for phase-change (thermal) lithography.

  19. Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, En Xia; Fleetwood, Daniel M.; Hachtel, Jordan A.

    2016-12-02

    In this paper, we have characterized the total ionizing dose response of strained Ge p MOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad(SiO 2) show minimal transconductance degradation (less than 5%), very small V th shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (<5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge p MOS FinFETs is far superior to that of past generations of planar Ge pmore » MOS devices. Finally, these improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology.« less

  20. Optical absorption properties of Ge 2–44 and P-doped Ge nanoparticles

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Qin, Wei; Lu, Wen-Cai; Zhao, Li-Zhen

    The optical absorption properties of non-crystalline and crystalline Ge nanoparticles with the sizes from ~ 2.5 to 15 Å have been studied at the B3LYP/6-31G level using time-dependent density functional theory. Hydrogen passivation and phosphorus doping on some selected Ge nanoparticles were also calculated. With the increase of cluster size, the optical absorption spectra of the non-crystalline Ge nanoparticles change from many peaks to a continuous broad band and at the same time exhibit a systematic red-shift. Doping phosphorus also causes the absorption spectra to shift toward the lower energy region for both non-crystalline and crystalline Ge nanoparticles. The non-crystallinemore » Ge nanoparticles are found to have stronger absorption in the visible region in comparison with the crystalline ones, regardless phosphorus doping.« less

  1. Optical absorption properties of Ge 2–44 and P-doped Ge nanoparticles

    DOE PAGES

    Qin, Wei; Lu, Wen-Cai; Zhao, Li-Zhen; ...

    2017-09-15

    The optical absorption properties of non-crystalline and crystalline Ge nanoparticles with the sizes from ~ 2.5 to 15 Å have been studied at the B3LYP/6-31G level using time-dependent density functional theory. Hydrogen passivation and phosphorus doping on some selected Ge nanoparticles were also calculated. With the increase of cluster size, the optical absorption spectra of the non-crystalline Ge nanoparticles change from many peaks to a continuous broad band and at the same time exhibit a systematic red-shift. Doping phosphorus also causes the absorption spectra to shift toward the lower energy region for both non-crystalline and crystalline Ge nanoparticles. The non-crystallinemore » Ge nanoparticles are found to have stronger absorption in the visible region in comparison with the crystalline ones, regardless phosphorus doping.« less

  2. Th2 polarization by Der p 1--pulsed monocyte-derived dendritic cells is due to the allergic status of the donors.

    PubMed

    Hammad, H; Charbonnier, A S; Duez, C; Jacquet, A; Stewart, G A; Tonnel, A B; Pestel, J

    2001-08-15

    The polarization of the immune response toward a Th2 or a Th1 profile can be mediated by dendritic cells (DCs) following antigen presentation and interaction with T cells. Costimulatory molecules such as CD80 and CD86 expressed by DCs, the polarizing cytokine environment during DC--T-cell interaction, and also the nature of the antigen are critical in the orientation of the immune response. In this study, the effect of the cysteine protease Der p 1, one of the major allergens of the house dust mite Dermatophagoides pteronyssinus, on these different parameters was evaluated comparatively on monocyte-derived DCs obtained from healthy donors, from pollen-sensitive patients, or from patients sensitive to Dermatophagoides pteronyssinus. Results showed that Der p 1 induced an increase in CD86 expression only on DCs from house dust mite--sensitive patients. This was also associated with a higher capacity to induce T-cell proliferation, a rapid increase in the production of proinflammatory cytokines, tumor necrosis factor--alpha and interleukin (IL)-1 beta, and the type 2 cytokine IL-10. No changes in the release of IL-12 p70 were induced by Der p 1. Finally, purified T cells from house dust mite-sensitive patients stimulated by autologous Der p 1--pulsed DCs preferentially produced IL-4 rather than interferon-gamma. These effects were abolished in the presence of the inactive precursor of Der p 1 (ProDer p 1). Taken together, these data suggest that DCs from house dust mite--sensitive patients, in contrast to DCs from healthy donors and from pollen-sensitive patients, exposed to Der p 1 play a pivotal role in the enhancement of the Th2 response associated with the allergic reaction developed in response to house dust mite exposure. (Blood. 2001;98:1135-1141)

  3. Low-mass vector-meson production at forward rapidity in p +p collisions at √s =200 GeV

    NASA Astrophysics Data System (ADS)

    Adare, A.; Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Akimoto, R.; Al-Ta'Ani, H.; Alexander, J.; Alfred, M.; Andrews, K. R.; Angerami, A.; Aoki, K.; Apadula, N.; Appelt, E.; Aramaki, Y.; Armendariz, R.; Asano, H.; Aschenauer, E. C.; Atomssa, E. T.; Awes, T. C.; Azmoun, B.; Babintsev, V.; Bai, M.; Bandara, N. S.; Bannier, B.; Barish, K. N.; Bassalleck, B.; Basye, A. T.; Bathe, S.; Baublis, V.; Baumann, C.; Bazilevsky, A.; Beaumier, M.; Beckman, S.; Belmont, R.; Ben-Benjamin, J.; Bennett, R.; Berdnikov, A.; Berdnikov, Y.; Black, D.; Blau, D. S.; Bok, J.; Bok, J. S.; Boyle, K.; Brooks, M. L.; Broxmeyer, D.; Bryslawskyj, J.; Buesching, H.; Bumazhnov, V.; Bunce, G.; Butsyk, S.; Campbell, S.; Castera, P.; Chen, C.-H.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Choudhury, R. K.; Christiansen, P.; Chujo, T.; Chvala, O.; Cianciolo, V.; Citron, Z.; Cole, B. A.; Conesa Del Valle, Z.; Connors, M.; Csanád, M.; Csörgő, T.; Dairaku, S.; Datta, A.; Daugherity, M. S.; David, G.; Dayananda, M. K.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Dharmawardane, K. V.; Dietzsch, O.; Ding, L.; Dion, A.; Do, J. H.; Donadelli, M.; Drapier, O.; Drees, A.; Drees, K. A.; Durham, J. M.; Durum, A.; D'Orazio, L.; Efremenko, Y. V.; Engelmore, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Fadem, B.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fleuret, F.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukao, Y.; Fusayasu, T.; Gal, C.; Gallus, P.; Garg, P.; Garishvili, I.; Ge, H.; Giordano, F.; Glenn, A.; Gong, X.; Gonin, M.; Goto, Y.; Granier de Cassagnac, R.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gu, Y.; Gunji, T.; Guo, L.; Guragain, H.; Gustafsson, H.-Å.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamblen, J.; Han, R.; Han, S. Y.; Hanks, J.; Harper, C.; Hasegawa, S.; Hashimoto, K.; Haslum, E.; Hayano, R.; He, X.; Hemmick, T. K.; Hester, T.; Hill, J. C.; Hollis, R. S.; Holzmann, W.; Homma, K.; Hong, B.; Horaguchi, T.; Hori, Y.; Hornback, D.; Hoshino, T.; Huang, S.; Ichihara, T.; Ichimiya, R.; Iinuma, H.; Ikeda, Y.; Imai, K.; Imazu, Y.; Inaba, M.; Iordanova, A.; Isenhower, D.; Ishihara, M.; Issah, M.; Ivanischev, D.; Ivanishchev, D.; Iwanaga, Y.; Jacak, B. V.; Jeon, S. J.; Jezghani, M.; Jia, J.; Jiang, X.; John, D.; Johnson, B. M.; Jones, T.; Joo, E.; Joo, K. S.; Jouan, D.; Jumper, D. S.; Kamin, J.; Kaneti, S.; Kang, B. H.; Kang, J. H.; Kang, J. S.; Kapustinsky, J.; Karatsu, K.; Kasai, M.; Kawall, D.; Kazantsev, A. V.; Kempel, T.; Key, J. A.; Khachatryan, V.; Khanzadeev, A.; Kihara, K.; Kijima, K. M.; Kim, B. I.; Kim, C.; Kim, D. H.; Kim, D. J.; Kim, E.-J.; Kim, H.-J.; Kim, M.; Kim, Y.-J.; Kim, Y. K.; Kinney, E.; Kiss, Á.; Kistenev, E.; Klatsky, J.; Kleinjan, D.; Kline, P.; Koblesky, T.; Kochenda, L.; Kofarago, M.; Komkov, B.; Konno, M.; Koster, J.; Kotov, D.; Král, A.; Kunde, G. J.; Kurita, K.; Kurosawa, M.; Kwon, Y.; Kyle, G. S.; Lacey, R.; Lai, Y. S.; Lajoie, J. G.; Lebedev, A.; Lee, D. M.; Lee, J.; Lee, K. B.; Lee, K. S.; Lee, S. H.; Lee, S. R.; Leitch, M. J.; Leite, M. A. L.; Leitgab, M.; Li, X.; Lim, S. H.; Linden Levy, L. A.; Liu, H.; Liu, M. X.; Love, B.; Lynch, D.; Maguire, C. F.; Makdisi, Y. I.; Makek, M.; Manion, A.; Manko, V. I.; Mannel, E.; Mao, Y.; Masui, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Means, N.; Meles, A.; Mendoza, M.; Meredith, B.; Miake, Y.; Mibe, T.; Mignerey, A. C.; Miki, K.; Miller, A. J.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Miyachi, Y.; Miyasaka, S.; Mizuno, S.; Mohanty, A. K.; Montuenga, P.; Moon, H. J.; Moon, T.; Morino, Y.; Morreale, A.; Morrison, D. P.; Motschwiller, S.; Moukhanova, T. V.; Murakami, T.; Murata, J.; Mwai, A.; Nagamiya, S.; Nagle, J. L.; Naglis, M.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakamiya, Y.; Nakamura, K. R.; Nakamura, T.; Nakano, K.; Nattrass, C.; Netrakanti, P. K.; Newby, J.; Nguyen, M.; Nihashi, M.; Niida, T.; Nouicer, R.; Novitzky, N.; Nyanin, A. S.; Oakley, C.; O'Brien, E.; Ogilvie, C. A.; Oka, M.; Okada, K.; Orjuela Koop, J. D.; Oskarsson, A.; Ouchida, M.; Ozaki, H.; Ozawa, K.; Pak, R.; Pantuev, V.; Papavassiliou, V.; Park, B. H.; Park, I. H.; Park, S.; Park, S. K.; Pate, S. F.; Patel, L.; Patel, M.; Pei, H.; Peng, J.-C.; Pereira, H.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perry, J.; Petti, R.; Pinkenburg, C.; Pinson, R.; Pisani, R. P.; Proissl, M.; Purschke, M. L.; Qu, H.; Rak, J.; Ravinovich, I.; Read, K. F.; Reygers, K.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richardson, E.; Riveli, N.; Roach, D.; Roche, G.; Rolnick, S. D.; Rosati, M.; Rosendahl, S. S. E.; Rowan, Z.; Rubin, J. G.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sano, S.; Sarsour, M.; Sato, S.; Sato, T.; Savastio, M.; Sawada, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seele, J.; Seidl, R.; Sen, A.; Seto, R.; Sett, P.; Sexton, A.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shim, H. H.; Shimomura, M.; Shoji, K.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Silvestre, C.; Sim, K. S.; Singh, B. K.; Singh, C. P.; Singh, V.; Slunečka, M.; Sodre, T.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Stenlund, E.; Stepanov, M.; Stoll, S. P.; Sugitate, T.; Sukhanov, A.; Sumita, T.; Sun, J.; Sziklai, J.; Takagui, E. M.; Takahara, A.; Taketani, A.; Tanabe, R.; Tanaka, Y.; Taneja, S.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tennant, E.; Themann, H.; Thomas, D.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Togawa, M.; Tomášek, L.; Tomášek, M.; Torii, H.; Towell, M.; Towell, R.; Towell, R. S.; Tserruya, I.; Tsuchimoto, Y.; Utsunomiya, K.; Vale, C.; van Hecke, H. W.; Vargyas, M.; Vazquez-Zambrano, E.; Veicht, A.; Velkovska, J.; Vértesi, R.; Virius, M.; Vossen, A.; Vrba, V.; Vznuzdaev, E.; Wang, X. R.; Watanabe, D.; Watanabe, K.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; Wei, R.; Wessels, J.; Whitaker, S.; White, S. N.; Winter, D.; Wolin, S.; Woody, C. L.; Wright, R. M.; Wysocki, M.; Xia, B.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yang, R.; Yanovich, A.; Ying, J.; Yokkaichi, S.; Yoo, J. S.; Yoon, I.; You, Z.; Young, G. R.; Younus, I.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zhou, S.; Phenix Collaboration

    2014-09-01

    The PHENIX experiment at the Relativistic Heavy Ion Collider has measured low-mass vector-meson, ω, ρ, and ϕ, production through the dimuon decay channel at forward rapidity (1.2<|y|<2.2) in p+p collisions at √s =200 GeV. The differential cross sections for these mesons are measured as a function of both pT and rapidity. We also report the integrated differential cross sections over 1<pT<7 GeV /c and 1.2<|y|<2.2: dσ/dy(ω +ρ→μμ)=80±6(stat)±12(syst) nb and dσ/dy(ϕ→μμ)=27±3(stat)±4(syst) nb. These results are compared with midrapidity measurements and calculations.

  4. Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

    NASA Astrophysics Data System (ADS)

    Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

    2016-04-01

    In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

  5. Measurements of {ital ep} {rightarrow} {ital e}'{pi}{sup +}{pi}{sup -}{ital p}' Cross Sections with CLAS at 1.40 GeV < {ital W} < 2.0 GeV and 2.0 GeV{sup 2} < {ital Q}{sup 2} < 5.0 GeV{sup 2}

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Isupov, E. L.; Burkert, V.; Carman, D. S.

    This paper reports new exclusive cross sections for ep -> e' pi(+) pi(-) p' using the CLAS detector at Jefferson Laboratory. These results are presented for the first time at photon virtualities 2.0 GeV2 < Q(2) < 5.0 GeV2 in the center-of-mass energy range 1.4 GeV < W < 2.0 GeV, which covers a large part of the nucleon resonance region. Using a model developed for the phenomenological analysis of electroproduction data, we see strong indications that the relative contributions from the resonant cross sections at W < 1.74 GeV increase with Q(2). These data considerably extend the kinematic reachmore » of previous measurements. Exclusive ep -> e' pi(+) pi(-) p' cross section measurements are of particular importance for the extraction of resonance electrocouplings in the mass range above 1.6 GeV« less

  6. Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

    NASA Astrophysics Data System (ADS)

    Campbell, Gavin P.; Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.; Bedzyk, Michael J.

    2018-04-01

    Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

  7. Activation of mas-related G-protein-coupled receptors by the house dust mite cysteine protease Der p1 provides a new mechanism linking allergy and inflammation.

    PubMed

    Reddy, Vemuri B; Lerner, Ethan A

    2017-10-20

    Cysteine and serine proteases function via protease-activated and mas-related G-protein-coupled receptors (Mrgprs) to contribute to allergy and inflammation. Der p1 is a cysteine protease and major allergen from the house dust mite and is associated with allergic rhinitis and allergic asthma. Der p1 activates protease-activated receptor 2 and induces the release of the pro-inflammatory cytokine IL-6 from cells. However, the possibility that Der p1 acts on Mrgprs has not been considered. We report here that ratiometric calcium imaging reveals that Der p1 activates the human receptor MRGPRX1 and the mouse homolog MrgprC11, implicated previously in itch. Der p1 cleavage of N-terminal receptor peptides followed by site-directed mutagenesis of the cleavage sites links receptor activation to specific amino acid residues. Der p1 also induced the release of IL-6 from heterologous cells expressing MRGPRX1. In summary, activation of Mrgprs by the allergen Der p1 may contribute to inflammation. © 2017 by The American Society for Biochemistry and Molecular Biology, Inc.

  8. Local electrical characterization of laser-recorded phase-change marks on amorphous Ge2Sb2Te5 thin films.

    PubMed

    Chang, Chia Min; Chu, Cheng Hung; Tseng, Ming Lun; Chiang, Hai-Pang; Mansuripur, Masud; Tsai, Din Ping

    2011-05-09

    Amorphous thin films of Ge(2)Sb(2)Te(5), sputter-deposited on a thin-film gold electrode, are investigated for the purpose of understanding the local electrical conductivity of recorded marks under the influence of focused laser beam. Being amorphous, the as-deposited chalcogenide films have negligible electrical conductivity. With the aid of a focused laser beam, however, we have written on these films micron-sized crystalline marks, ablated holes surrounded by crystalline rings, and other multi-ring structures containing both amorphous and crystalline zones. Within these structures, nano-scale regions of superior local conductivity have been mapped and probed using our high-resolution, high-sensitivity conductive-tip atomic force microscope (C-AFM). Scanning electron microscopy and energy-dispersive spectrometry have also been used to clarify the origins of high conductivity in and around the recorded marks. When the Ge(2)Sb(2)Te(5) layer is sufficiently thin, and when laser crystallization/ablation is used to define long isolated crystalline stripes on the samples, we find the C-AFM-based method of extracting information from the recorded marks to be superior to other forms of microscopy for this particular class of materials. Given the tremendous potential of chalcogenides as the leading media candidates for high-density memories, local electrical characterization of marks recorded on as-deposited amorphous Ge(2)Sb(2)Te(5) films provides useful information for furthering research and development efforts in this important area of modern technology. © 2011 Optical Society of America

  9. Red-emitting Ga/As,P///In,Ga/P heterojunction lasers

    NASA Technical Reports Server (NTRS)

    Kressel, H.; Nuese, C. J.; Olsen, G. H.

    1978-01-01

    The paper describes in detail the properties of vapor-grown double-heterojunction lasers of Ga(As,P)/(In,Ga)P with room-temperature threshold current densities as low as 3400 A/sq cm at 7000 A and 6600 A/sq cm at 6800 A. These thresholds are three to eight times smaller than those of (Al,Ga)As lasers in this wavelength range due to the shorter-wavelength direct-indirect transition in Ga(As,P). The optical and electrical characteristics of the Ga(As,P)/(In,Ga)P lasers are found to be similar to those of (Al,Ga)As, with fundamental transverse-mode operation to 70 C, and spontaneous carrier lifetimes between 5 and 8 nsec typically observed at low current densities.

  10. The 1.1 micrometer and visible emission semiconductor diode lasers. [(AlGa)As lasers

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Nuese, C. J.; Kressel, H.

    1978-01-01

    In (AlGa)As, the first of three alloy systems studied, Continuous Wave (CW) operation was obtained at room temperature at a wavelength as low as 7260 A. Reliability in this system was studied in the incoherent mode. Zinc doped devices had significant degradation, whereas Ge or Ge plus Zi doped devices had none. The Al2O3 facet coatings were shown to significantly reduce facet deterioration in all types of lasers, longer wavelength units of that type having accumulated (at the time of writing) 22,000 hours with little if any degradation. A CL study of thin (AlGa)As layers revealed micro fluctuation in composition. A macro-scale fluctuation was observed by electroreflectance. An experimental and theoretical study of the effect of stripe width on the threshold current was carried out. Emission below 7000 A was obtained in VPE grown Ga(AsP) (In,Ga)P with CW operation at 10 C. Lasers and LED's were made by LPE in (InGa) (AsP). Laser thresholds of 5 kA/cm2 were obtained, while LED efficiences were on the order of 2%. Incoherent life test over 6000 hours showed no degradation.

  11. Growth of Ferromagnetic Epitaxial Film of Hexagonal FeGe on (111) Ge Surface

    NASA Astrophysics Data System (ADS)

    Kumar, Dushyant; Joshi, P. C.; Hossain, Z.; Budhani, R. C.

    2014-03-01

    The realization of semiconductors showing ferromagnetic order at easily accessible temperatures has been of interest due to their potential use in spintronic devices where long spin life times are of key interest. We have realized the growth of FeGe thin films on Ge (111) wafers using pulsed laser deposition (PLD). The stoichiometric and single phase FeGe target used in PLD chamber has been made by arc melting. A typical θ-2 θ diffraction spectra performed on 40 nm thick FeGe film suggests the stabilization of β-Ni2In (B82-type) hexagonal phase with an epitaxial orientation of (0001)FeGe ||(111)Ge and [11-20]FeGe ||[-110]Ge. SEM images shows a granular structure with the formation of very large grains of about 100 to 500 nm in lateral dimension. The magnetization vs. temperature data taken from SQUID reveal the TC of ~ 270K. Since, PLD technique makes it easier to stabilize the B82 (Ni2In) hexagonal phase in thin FeGe films, this work opens opportunities to reinvestigate many conflicting results on various properties of the FeGe system.

  12. The 76Ge(n,p)76Ga reaction and its relevance to searches for the neutrino-less double-beta decay of 76Ge

    NASA Astrophysics Data System (ADS)

    Tornow, W.; Bhike, Megha; Fallin, B.; Krishichayan, Fnu

    2015-10-01

    The 76Ge(n,p)76Ga reaction and the subsequent β decay of 76Ga to 76Ge has been used to excite the 3951.9 keV state of 76Ge, which decays by emission of a 2040.7 keV γ ray. Using HPGe detectors, the associated pulse-height signal may be undistinguishable from the potential signal produced in neutrino-less double-beta decay of 76Ge with its Q-value of 2039.0 keV. In the neutron energy range between 10 and 20 MeV the production cross section of the 2040.7 keV γ ray is approximately 0.1 mb. In the same experiment γ rays of energy 2037.9 keV resulting from the 76Ge(n, γ)77Ge reaction were clearly observed. Adding the 76Ge(n,n' γ)76Ge reaction, which also produces the 2040.7 keV γ ray with a cross section value of the order of 0.1 mb clearly shows that great care has to be taken to eliminate neutron-induced backgrounds in searches for neutrino-less double-beta decay of 76Ge. This work was supported by the U.S. DOE under Grant NO. DE-FG02-97ER41033.

  13. Azimuthal anisotropy and correlations at large transverse momenta in p + p and Au + Au collisions at square root sNN=200 GeV.

    PubMed

    Adams, J; Aggarwal, M M; Ahammed, Z; Amonett, J; Anderson, B D; Arkhipkin, D; Averichev, G S; Badyal, S K; Bai, Y; Balewski, J; Barannikova, O; Barnby, L S; Baudot, J; Bekele, S; Belaga, V V; Bellwied, R; Berger, J; Bezverkhny, B I; Bharadwaj, S; Bhasin, A; Bhati, A K; Bhatia, V S; Bichsel, H; Billmeier, A; Bland, L C; Blyth, C O; Bonner, B E; Botje, M; Boucham, A; Brandin, A V; Bravar, A; Bystersky, M; Cadman, R V; Cai, X Z; Caines, H; Calderón de la Barca Sánchez, M; Carroll, J; Castillo, J; Cebra, D; Chajecki, Z; Chaloupka, P; Chattopdhyay, S; Chen, H F; Chen, Y; Cheng, J; Cherney, M; Chikanian, A; Christie, W; Coffin, J P; Cormier, T M; Cramer, J G; Crawford, H J; Das, D; Das, S; de Moura, M M; Derevschikov, A A; Didenko, L; Dietel, T; Dogra, S M; Dong, W J; Dong, X; Draper, J E; Du, F; Dubey, A K; Dunin, V B; Dunlop, J C; Dutta Mazumdar, M R; Eckardt, V; Edwards, W R; Efimov, L G; Emelianov, V; Engelage, J; Eppley, G; Erazmus, B; Estienne, M; Fachini, P; Faivre, J; Fatemi, R; Fedorisin, J; Filimonov, K; Filip, P; Finch, E; Fine, V; Fisyak, Y; Foley, K J; Fomenko, K; Fu, J; Gagliardi, C A; Gans, J; Ganti, M S; Gaudichet, L; Geurts, F; Ghazikhanian, V; Ghosh, P; Gonzalez, J E; Grachov, O; Grebenyuk, O; Grosnick, D; Guertin, S M; Guo, Y; Gupta, A; Gutierrez, T D; Hallman, T J; Hamed, A; Hardtke, D; Harris, J W; Heinz, M; Henry, T W; Hepplemann, S; Hippolyte, B; Hirsch, A; Hjort, E; Hoffmann, G W; Huang, H Z; Huang, S L; Hughes, E W; Humanic, T J; Igo, G; Ishihara, A; Jacobs, P; Jacobs, W W; Janik, M; Jiang, H; Jones, P G; Judd, E G; Kabana, S; Kang, K; Kaplan, M; Keane, D; Khodyrev, V Yu; Kiryluk, J; Kisiel, A; Kislov, E M; Klay, J; Klein, S R; Klyachko, A; Koetke, D D; Kollegger, T; Kopytine, M; Kotchenda, L; Kramer, M; Kravtsov, P; Kravtsov, V I; Krueger, K; Kuhn, C; Kulikov, A I; Kumar, A; Kunz, C L; Kutuev, R Kh; Kuznetsov, A A; Lamont, M A C; Landgraf, J M; Lange, S; Laue, F; Lauret, J; Lebedev, A; Lednicky, R; Lehocka, S; LeVine, M J; Li, C; Li, Q; Li, Y; Lindenbaum, S J; Lisa, M A; Liu, F; Liu, L; Liu, Q J; Liu, Z; Ljubicic, T; Llope, W J; Long, H; Longacre, R S; Lopez-Noriega, M; Love, W A; Lu, Y; Ludlam, T; Lynn, D; Ma, G L; Ma, J G; Ma, Y G; Magestro, D; Mahajan, S; Mahapatra, D P; Majka, R; Mangotra, L K; Manweiler, R; Margetis, S; Markert, C; Martin, L; Marx, J N; Matis, H S; Matulenko, Yu A; McClain, C J; McShane, T S; Meissner, F; Melnick, Yu; Meschanin, A; Miller, M L; Milosevich, Z; Minaev, N G; Mironov, C; Mischke, A; Mishra, D K; Mitchell, J; Mohanty, B; Molnar, L; Moore, C F; Morozov, D A; Munhoz, M G; Nandi, B K; Nayak, S K; Nayak, T K; Nelson, J M; Netrakanti, P K; Nikitin, V A; Nogach, L V; Nurushev, S B; Odyniec, G; Ogawa, A; Okorokov, V; Oldenburg, M; Olson, D; Pal, S K; Panebratsev, Y; Panitkin, S Y; Pavlinov, A I; Pawlak, T; Peitzmann, T; Perevoztchikov, V; Perkins, C; Peryt, W; Petrov, V A; Phatak, S C; Picha, R; Planinic, M; Pluta, J; Porile, N; Porter, J; Poskanzer, A M; Potekhin, M; Potrebenikova, E; Potukuchi, B V K S; Prindle, D; Pruneau, C; Putschke, J; Rai, G; Rakness, G; Raniwala, R; Raniwala, S; Ravel, O; Ray, R L; Razin, S V; Reichhold, D; Reid, J G; Renault, G; Retiere, F; Ridiger, A; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Rose, A; Roy, C; Ruan, L; Sahoo, R; Sakrejda, I; Salur, S; Sandweiss, J; Savin, I; Sazhin, P S; Schambach, J; Scharenberg, R P; Schmitz, N; Schroeder, L S; Schweda, K; Seger, J; Seyboth, P; Shahaliev, E; Shao, M; Shao, W; Sharma, M; Shen, W Q; Shestermanov, K E; Shimanskiy, S S; Sichtermann, E; Simon, F; Singaraju, R N; Skoro, G; Smirnov, N; Snellings, R; Sood, G; Sorensen, P; Sowinski, J; Speltz, J; Spinka, H M; Srivastava, B; Stadnik, A; Stanislaus, T D S; Stock, R; Stolpovsky, A; Strikhanov, M; Stringfellow, B; Suaide, A A P; Sugarbaker, E; Suire, C; Sumbera, M; Surrow, B; Symons, T J M; Szanto de Toledo, A; Szarwas, P; Tai, A; Takahashi, J; Tang, A H; Tarnowsky, T; Thein, D; Thomas, J H; Timoshenko, S; Tokarev, M; Trentalange, S; Tribble, R E; Tsai, O D; Ulery, J; Ullrich, T; Underwood, D G; Urkinbaev, A; Van Buren, G; van Leeuwen, M; Vander Molen, A M; Varma, R; Vasilevski, I M; Vasiliev, A N; Vernet, R; Vigdor, S E; Viyogi, Y P; Vokal, S; Voloshin, S A; Vznuzdaev, M; Waggoner, W T; Wang, F; Wang, G; Wang, G; Wang, X L; Wang, Y; Wang, Y; Wang, Z M; Ward, H; Watson, J W; Webb, J C; Wells, R; Westfall, G D; Wetzler, A; Whitten, C; Wieman, H; Wissink, S W; Witt, R; Wood, J; Wu, J; Xu, N; Xu, Z; Xu, Z Z; Yamamoto, E; Yepes, P; Yurevich, V I; Zanevsky, Y V; Zhang, H; Zhang, W M; Zhang, Z P; Zolnierczuk, P A; Zoulkarneev, R; Zoulkarneeva, Y; Zubarev, A N

    2004-12-17

    Results on high transverse momentum charged particle emission with respect to the reaction plane are presented for Au + Au collisions at square root s(NN)=200 GeV. Two- and four-particle correlations results are presented as well as a comparison of azimuthal correlations in Au + Au collisions to those in p + p at the same energy. The elliptic anisotropy v(2) is found to reach its maximum at p(t) approximately 3 GeV/c, then decrease slowly and remain significant up to p(t) approximately 7-10 GeV/c. Stronger suppression is found in the back-to-back high-p(t) particle correlations for particles emitted out of plane compared to those emitted in plane. The centrality dependence of v(2) at intermediate p(t) is compared to simple models based on jet quenching.

  14. EFFECTS OF LASER RADIATION ON MATTER: Growth of periodic structures on the surface of germanium subjected to pulsed laser radiation

    NASA Astrophysics Data System (ADS)

    Barsukov, D. O.; Gusakov, G. M.; Frolov, A. I.

    1991-12-01

    An experimental investigation was made of the dynamics of growth of periodic surface structures due to the interaction with pulsed laser radiation. Samples of Ge were subjected to laser pulses (λ = 1.06 μm, τ = 70 ns) with energy densities in the range 0.5-5.5 J/cm2. An investigation was made of the dynamics of the first-order diffraction of probe (λ = 0.53 μm) laser pulses with a time resolution 4 ns when p- and s-polarized laser radiation was incident at angles close to normal. A strong nonlinearity of the growth of such periodic surface structures was observed. The energy density from which such growth began depended on the quality of the polished Ge surface. The parameters of the dynamics of the growth of these structures were estimated.

  15. Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Al-Kabi, Sattar H. Sweilim

    Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid

  16. Cross section and transverse single-spin asymmetry of muons from open heavy-flavor decays in polarized p + p collisions at s = 200 GeV

    DOE PAGES

    Aidala, C.; Ajitanand, N. N.; Akiba, Y.; ...

    2017-06-01

    The cross section and transverse single-spin asymmetries of μ- and μþ from open heavy-flavor decays in polarized p þ p collisions at ffiffiffi s p ¼ 200 GeV were measured by the PHENIX experiment during 2012 at the Relativistic Heavy Ion Collider. Because heavy-flavor production is dominated by gluon-gluon interactions at ffiffiffis p ¼ 200 GeV, these measurements offer a unique opportunity to obtain information on the trigluon correlation functions. The measurements are performed at forward and backward rapidity (1.4 < jyj < 2.0) over the transverse momentum range of 1.25 < pT < 7 GeV=c for the cross sectionmore » and 1.25 < pT < 5 GeV=c for the asymmetry measurements. The obtained cross section is compared to a fixed-order-plus-next-to-leading-log perturbative-quantum-chromodynamics calculation. The asymmetry results are consistent with zero within uncertainties, and a model calculation based on twist-3 three-gluon correlations agrees with the data.« less

  17. Molecular approaches to p- and n-nanoscale doping of Ge 1-ySn y semiconductors: Structural, electrical and transport properties

    NASA Astrophysics Data System (ADS)

    Xie, Junqi; Tolle, J.; D'Costa, V. R.; Weng, C.; Chizmeshya, A. V. G.; Menendez, J.; Kouvetakis, J.

    2009-08-01

    We report the development of practical doping protocols via designer molecular sources to create n- and p-type doped Ge 1-ySn y layers grown directly upon Si(1 0 0). These materials will have applications in the fabrication of advanced PIN devices that are intended to extend the infrared optical response beyond that of Ge by utilizing the Sn composition as an additional design parameter. Highly controlled and efficient n-doping of single-layer structures is achieved using custom built P(GeH 3) 3 and As(GeH 3) 3, precursors containing preformed Ge-As and Ge-P near-tetrahedral bonding arrangements compatible with the structure of the host Ge-Sn lattice. Facile substitution and complete activation of the P and As atoms at levels ˜10 17-10 19 cm -3 is obtained via in situ depositions at low temperatures (350 °C). Acceptor doping is readily achieved using conventional diborane yielding carrier concentrations between 10 17-10 19 cm -3 under similar growth conditions. Full activation of the as-grown dopant concentrations is demonstrated by combined SIMS and Hall experiments, and corroborated using a contactless spectroscopic ellipsometry approach. RTA processing of the samples leads to a significant increase in carrier mobility comparable to that of bulk Ge containing similar doping levels. The alloy scattering contribution appears to be negligible for electron carrier concentrations beyond 10 19 cm -3 in n-type samples and hole concentrations beyond 10 18 cm -3 in p-type samples. A comparative study using the classical lower-order hydrides PH 3 and AsH 3 produced n-doped films with carrier densities (up to 9 × 10 19 cm -3) similar to those afforded by P(GeH 3) 3 and As(GeH 3) 3. However, early results indicate that the simpler PH 3 and AsH 3 sources yield materials with inferior morphology and microstructure. Calculations of surface energetics using bond enthalpies suggest that the latter massive compounds bind to the surface via strong Ge-Ge bonds and likely act as

  18. Laser generated Ge ions accelerated by additional electrostatic field for implantation technology

    NASA Astrophysics Data System (ADS)

    Rosinski, M.; Gasior, P.; Fazio, E.; Ando, L.; Giuffrida, L.; Torrisi, L.; Parys, P.; Mezzasalma, A. M.; Wolowski, J.

    2013-05-01

    The paper presents research on the optimization of the laser ion implantation method with electrostatic acceleration/deflection including numerical simulations by the means of the Opera 3D code and experimental tests at the IPPLM, Warsaw. To introduce the ablation process an Nd:YAG laser system with repetition rate of 10 Hz, pulse duration of 3.5 ns and pulse energy of 0.5 J has been applied. Ion time of flight diagnostics has been used in situ to characterize concentration and energy distribution in the obtained ion streams while the postmortem analysis of the implanted samples was conducted by the means of XRD, FTIR and Raman Spectroscopy. In the paper the predictions of the Opera 3D code are compared with the results of the ion diagnostics in the real experiment. To give the whole picture of the method, the postmortem results of the XRD, FTIR and Raman characterization techniques are discussed. Experimental results show that it is possible to achieve the development of a micrometer-sized crystalline Ge phase and/or an amorphous one only after a thermal annealing treatment.

  19. Angular decay coefficients of J /ψ mesons at forward rapidity from p +p collisions at √{s }=510 GeV

    NASA Astrophysics Data System (ADS)

    Adare, A.; Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Akimoto, R.; Alfred, M.; Andrieux, V.; Aoki, K.; Apadula, N.; Aramaki, Y.; Asano, H.; Atomssa, E. T.; Awes, T. C.; Ayuso, C.; Azmoun, B.; Babintsev, V.; Bai, M.; Bandara, N. S.; Bannier, B.; Barish, K. N.; Bathe, S.; Bazilevsky, A.; Beaumier, M.; Beckman, S.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Black, D.; Blau, D. S.; Boer, M.; Bok, J. S.; Bownes, E. K.; Boyle, K.; Brooks, M. L.; Bryslawskyj, J.; Buesching, H.; Bumazhnov, V.; Butler, C.; Campbell, S.; Canoa Roman, V.; Cervantes, R.; Chen, C.-H.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Chujo, T.; Citron, Z.; Connors, M.; Cronin, N.; Csanád, M.; Csörgő, T.; Danley, T. W.; Datta, A.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Ding, L.; Dion, A.; Dixit, D.; Do, J. H.; Drees, A.; Drees, K. A.; Dumancic, M.; Durham, J. M.; Durum, A.; Dusing, J. P.; Elder, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukuda, Y.; Gal, C.; Gallus, P.; Garg, P.; Ge, H.; Giordano, F.; Glenn, A.; Goto, Y.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gu, Y.; Gunji, T.; Guragain, H.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamilton, H. F.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haseler, T. O. S.; He, X.; Hemmick, T. K.; Hill, J. C.; Hill, K.; Hollis, R. S.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Ikeda, Y.; Imai, K.; Imazu, Y.; Imrek, J.; Inaba, M.; Iordanova, A.; Isenhower, D.; Ito, Y.; Ivanishchev, D.; Jacak, B. V.; Jeon, S. J.; Jezghani, M.; Ji, Z.; Jia, J.; Jiang, X.; Johnson, B. M.; Joo, E.; Joo, K. S.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kang, J. H.; Kang, J. S.; Kapukchyan, D.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Kempel, T.; Key, J. A.; Khachatryan, V.; Khanzadeev, A.; Kihara, K.; Kim, C.; Kim, D. H.; Kim, D. J.; Kim, E.-J.; Kim, H.-J.; Kim, M.; Kim, M. H.; Kim, Y. K.; Kimball, M. L.; Kincses, D.; Kistenev, E.; Klatsky, J.; Kleinjan, D.; Kline, P.; Koblesky, T.; Kofarago, M.; Koster, J.; Kotler, J. R.; Kotov, D.; Kudo, S.; Kurita, K.; Kurosawa, M.; Kwon, Y.; Lacey, R.; Lajoie, J. G.; Lallow, E. O.; Lebedev, A.; Lee, K. B.; Lee, S.; Lee, S. H.; Leitch, M. J.; Leitgab, M.; Leung, Y. H.; Lewis, N. A.; Li, X.; Lim, S. H.; Liu, L. D.; Liu, M. X.; Loggins, V.-R.; Loggins, V.-R.; Lovasz, K.; Lynch, D.; Majoros, T.; Makdisi, Y. I.; Makek, M.; Malaev, M.; Manion, A.; Manko, V. I.; Mannel, E.; Masuda, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Meles, A.; Mendez, A. R.; Mendoza, M.; Meredith, B.; Miake, Y.; Mignerey, A. C.; Mihalik, D. E.; Miller, A. J.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Miyasaka, S.; Mizuno, S.; Montuenga, P.; Moon, T.; Morrison, D. P.; Morrow, S. I. M.; Moukhanova, T. V.; Murakami, T.; Murata, J.; Mwai, A.; Nagai, K.; Nagamiya, S.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakano, K.; Nattrass, C.; Netrakanti, P. K.; Nihashi, M.; Niida, T.; Nouicer, R.; Novák, T.; Novitzky, N.; Novotny, R.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ottino, G. J.; Ozawa, K.; Pak, R.; Pantuev, V.; Papavassiliou, V.; Park, J. S.; Park, S.; Pate, S. F.; Patel, L.; Patel, M.; Peng, J.-C.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perezlara, C. E.; Perry, J.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pinson, R.; Pisani, R. P.; Press, C. J.; Pun, A.; Purschke, M. L.; Rak, J.; Ravinovich, I.; Read, K. F.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richford, D.; Rinn, T.; Riveli, N.; Roach, D.; Rolnick, S. D.; Rosati, M.; Rowan, Z.; Rubin, J. G.; Runchey, J.; Safonov, A. S.; Saito, N.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Sawada, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seele, J.; Seidl, R.; Sen, A.; Seto, R.; Sett, P.; Sexton, A.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shioya, T.; Shukla, P.; Sickles, A.; Silva, C. L.; Silva, J. A.; Silvermyr, D.; Singh, B. K.; Singh, C. P.; Singh, V.; Slunečka, M.; Smith, K. L.; Snowball, M.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Stepanov, M.; Stien, H.; Stoll, S. P.; Sugitate, T.; Sukhanov, A.; Sumita, T.; Sun, J.; Syed, S.; Sziklai, J.; Takahara, A.; Takeda, A.; Taketani, A.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarnai, G.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Tomášek, M.; Torii, H.; Towell, C. L.; Towell, M.; Towell, R.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vargyas, M.; Vazquez-Carson, S.; Velkovska, J.; Virius, M.; Vrba, V.; Vukman, N.; Vznuzdaev, E.; Wang, X. R.; Wang, Z.; Watanabe, D.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; Whitaker, S.; Wolin, S.; Wong, C. P.; Woody, C. L.; Wysocki, M.; Xia, B.; Xu, C.; Xu, Q.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yamamoto, H.; Yanovich, A.; Yin, P.; Yoo, J. H.; Yoon, I.; Younus, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zharko, S.; Zou, L.; Phenix Collaboration

    2017-05-01

    We report the first measurement of the full angular distribution for inclusive J /ψ →μ+μ- decays in p +p collisions at √{s }=510 GeV . The measurements are made for J /ψ transverse momentum 2 <pT<10 GeV /c and rapidity 1.2 pT and becomes close to zero at high pT, while the azimuthal coefficient λϕ is close to zero at low pT, and becomes slightly negative at higher pT. The frame-independent coefficient λ ˜ is strongly negative at all pT in all frames. The data are compared to the theoretical predictions provided by nonrelativistic quantum chromodynamics models.

  20. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  1. Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised $${\\rm Si}_{0.55}{\\rm Ge}_{0.45}$$ Source/Drain

    DOE PAGES

    Wang, Liang; Zhang, En Xia; Schrimpf, Ronald D.; ...

    2015-12-17

    Here, the total ionizing dose response of Ge channel pFETs with raised Si 0.55Ge 0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.

  2. Angular decay coefficients of J/ψ mesons at forward rapidity from p+p collisions at √s = 510 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adare, A.; Azmoun, B.; Aidala, C.

    In this paper, we report the first measurement of the full angular distribution for inclusive J/ψ → μ +μ - decays in p+p collisions at √s = 510 GeV. The measurements are made for J/ψ transverse momentum 2 < p T < 10 GeV/c and rapidity 1.2 < y < 2.2 in the Helicity, Collins-Soper, and Gottfried-Jackson reference frames. In all frames the polar coefficient λ θ is strongly negative at low p T and becomes close to zero at high p T, while the azimuthal coefficient λ Φ is close to zero at low p T, and becomes slightlymore » negative at higher p T. The frame-independent coefficient λ ~ is strongly negative at all p T in all frames. Finally, the data are compared to the theoretical predictions provided by nonrelativistic quantum chromodynamics models.« less

  3. Angular decay coefficients of J/ψ mesons at forward rapidity from p+p collisions at √s = 510 GeV

    DOE PAGES

    Adare, A.; Azmoun, B.; Aidala, C.; ...

    2017-04-13

    In this paper, we report the first measurement of the full angular distribution for inclusive J/ψ → μ +μ - decays in p+p collisions at √s = 510 GeV. The measurements are made for J/ψ transverse momentum 2 < p T < 10 GeV/c and rapidity 1.2 < y < 2.2 in the Helicity, Collins-Soper, and Gottfried-Jackson reference frames. In all frames the polar coefficient λ θ is strongly negative at low p T and becomes close to zero at high p T, while the azimuthal coefficient λ Φ is close to zero at low p T, and becomes slightlymore » negative at higher p T. The frame-independent coefficient λ ~ is strongly negative at all p T in all frames. Finally, the data are compared to the theoretical predictions provided by nonrelativistic quantum chromodynamics models.« less

  4. Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lin, Guangyang; Li, Cheng, E-mail: lich@xmu.edu.cn; Chen, Chaowen

    2016-05-09

    Strong room temperature electroluminescence with two emission peaks at around 0.786 eV and 0.747 eV from Ge n+/p shallow junctions was reported. The peak at around 0.786 eV comes from direct band luminescence (DBL) in n + Ge regions, while the peak fixing at 0.747 eV is resulted from defects induced by ion implantation. Heavy n-type doping in Ge renders realization of strong defect-related luminescence (DRL) feasible. The peak intensity ratio of DRL/DBL decreases with increase of injection current since more electrons are filled in Γ valley. Above all, the Ge n+/p shallow junction is fully compatible with the source and drain in Gemore » metal-oxide-semiconductor field effect transistors.« less

  5. Ge 3P 6Si 2O 25: A cage structure closely related to the intersecting tunnel structure KMo 3P 6Si 2O 25

    NASA Astrophysics Data System (ADS)

    Leclaire, A.; Raveau, B.

    1988-08-01

    A germanosilicophosphate Ge 3P 6Si 2O 25 has been isolated. Its structure was solved from a single-crystal study in the space group P overline31c . Its cell parameters are a = b = 7.994(1) Å, c = 16.513(2) Å, Z = 2. The refinement by full-matrix least-squares calculations leads to R = 0.043 with 686 independent reflections. The structure of this oxide is built up from corner-sharing PO 4 and SiO 4 tetrahedra and GeO 6 octahedra. One observes a feature common to several silicophosphates: the presence of the structural unit P 6Si 2O 25 built up from a disilicate group sharing its corners with six PO 4 tetrahedra. The structural relationships between this oxide and the silicophosphates AMo 3P 6Si 2O 25 and Si 3P 6Si 2O 25 (or Ge 3P 6 Ge 2O 25) are described.

  6. Effect of small scattering centers on the thermoelectric properties of p-type SiGe alloys

    NASA Technical Reports Server (NTRS)

    Beaty, John S.; Rolfe, Jonathan L.; Vandersande, Jan W.

    1991-01-01

    Theory predicts that the addition of ultra-fine, inert, phonon-scattering centers to thermoelectric materials will reduce their thermal conductivity. To investigate this prediction, ultrafine particulates (20 to 120 A) of silicon nitride have been added to boron-doped, p-type, 80/20 SiGe. All of the SiGe samples produced from ultrafine powder have lower thermal conductivities than standard SiGe, but high-temperature heat treatment increases the thermal conductivity back to the value for standard SiGe. However, the SiGe samples with silicon nitride, inert, phonon-scattering centers retained the lower thermal conductivity after several heat treatments. A reduction of approximately 25 percent in thermal conductivity has been achieved in these samples. The magnitude of the reduction agrees with theoretical predictions.

  7. Zeit im Wandel der Zeit.

    NASA Astrophysics Data System (ADS)

    Aichelburg, P. C.

    Contents: Einleitung(P. C. Aichelburg). 1. Über Zeit, Bewegung und Veränderung (Aristoteles). 2. Ewigkeit und Zeit (Plotin). 3. Was ist die Zeit? (Augustinus). 4. Von der Zeit (Immanuel Kant). 5. Newtons Ansichten über Zeit, Raum und Bewegung (Ernst Mach). 6. Über die mechanische Erklärung irreversibler Vorgänge (Ludwig Boltzmann). 7. Das Maß der Zeit (Henri Poincaré). 8. Dauer und Intuition (Henri Bergson). 9. Die Geschichte des Unendlichkeitsproblems (Bertrand Russell). 10. Raum und Zeit (Hermann Minkowski). 11. Der Unterschied von Zeit und Raum (Hans Reichenbach). 12. Newtonscher und Bergsonscher Zeitbegriff (Norbert Wiener). 13. Die Bildung des Zeitbegriffs beim Kinde (JeanPiaget).14. Eine Bemerkung über die Beziehungen zwischen Relativitätstheorie und der idealistischen Philosophie (Kurt Gödel). 15. Der zweite Hauptsatz und der Unterschied von Vergangenheit und Zukunft (Carl Friedrich v. Weizsäcker). 16. Zeit als physikalischer Begriff (Friedrich Hund). 17. Zeitmessung und Zeitbegriff in der Astronomie (Otto Heckmann). 18. Kann die Zeit rückwärts gehen? (Martin Gardner). 19. Zeit und Zeiten (Ilya Prigogine, Isabelle Stengers). 20. Zeit als dynamische Größe in der Relativitätstheorie (P. C. Aichelburg).

  8. p-barp interactions at 2. 32 GeV/c

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chen, C.K.; Fields, T.; Rhines, D.S.

    1978-01-01

    A bubble-chamber experiment based on 304 000 events of p-barp interactions at 2.32 GeV/c is described. The film was automatically scanned and measured by the POLLY II system. Details of the data-analysis methods are given. We report results on cross sections for constrained final states, tests of C invariance, and inclusive pion and rho/sup 0/ multiplicity parameters for annihilation final states.

  9. Energy dependence of π±, p and pbar transverse momentum spectra for Au + Au collisions at √{sNN} = 62.4 and 200 GeV

    NASA Astrophysics Data System (ADS)

    Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baumgart, S.; Belaga, V. V.; Bellingeri-Laurikainen, A.; Bellwied, R.; Benedosso, F.; Betts, R. R.; Bharadwaj, S.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Billmeier, A.; Bland, L. C.; Blyth, S.-L.; Bombara, M.; Bonner, B. E.; Botje, M.; Bouchet, J.; Brandin, A. V.; Bravar, A.; Burton, T. P.; Bystersky, M.; Cadman, R. V.; Cai, X. Z.; Caines, H.; Calderón de la Barca Sánchez, M.; Callner, J.; Catu, O.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, H. A.; Christie, W.; Chung, S. U.; Coffin, J. P.; Cormier, T. M.; Cosentino, M. R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Daugherity, M.; de Moura, M. M.; Dedovich, T. G.; DePhillips, M.; Derevschikov, A. A.; Didenko, L.; Dietel, T.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, F.; Dunin, V. B.; Dunlop, J. C.; Dutta Mazumdar, M. R.; Eckardt, V.; Edwards, W. R.; Efimov, L. G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Feng, A.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fornazier, K. S. F.; Fu, J.; Gagliardi, C. A.; Gaillard, L.; Ganti, M. S.; Garcia-Solis, E.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. G.; Gos, H.; Grebenyuk, O.; Grosnick, D.; Guertin, S. M.; Guimaraes, K. S. F. F.; Gupta, N.; Haag, B.; Hallman, T. J.; Hamed, A.; Harris, J. W.; He, W.; Heinz, M.; Henry, T. W.; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D.; Hollis, R.; Horner, M. J.; Huang, H. Z.; Hughes, E. W.; Humanic, T. J.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jia, F.; Jiang, H.; Jones, P. G.; Judd, E. G.; Kabana, S.; Kang, K.; Kapitan, J.; Kaplan, M.; Keane, D.; Kechechyan, A.; Kettler, D.; Khodyrev, V. Yu.; Kim, B. C.; Kiryluk, J.; Kisiel, A.; Kislov, E. M.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kollegger, T.; Kopytine, M.; Kotchenda, L.; Kouchpil, V.; Kowalik, K. L.; Kramer, M.; Kravtsov, P.; Kravtsov, V. I.; Krueger, K.; Kuhn, C.; Kulikov, A. I.; Kumar, A.; Kurnadi, P.; Kuznetsov, A. A.; Lamont, M. A. C.; Landgraf, J. M.; Lange, S.; LaPointe, S.; Laue, F.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C.-H.; Lehocka, S.; LeVine, M. J.; Li, C.; Li, Q.; Li, Y.; Lin, G.; Lin, X.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Liu, L.; Ljubicic, T.; Llope, W. J.; Long, H.; Longacre, R. S.; Lopez-Noriega, M.; Love, W. A.; Lu, Y.; Ludlam, T.; Lynn, D.; Ma, G. L.; Ma, J. G.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Martin, L.; Matis, H. S.; Matulenko, Yu. A.; McClain, C. J.; McShane, T. S.; Melnick, Yu.; Meschanin, A.; Millane, J.; Miller, M. L.; Minaev, N. G.; Mioduszewski, S.; Mironov, C.; Mischke, A.; Mitchell, J.; Mohanty, B.; Molnar, L.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Nepali, C.; Netrakanti, P. K.; Nikitin, V. A.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okorokov, V.; Oldenburg, M.; Olson, D.; Pachr, M.; Pal, S. K.; Panebratsev, Y.; Panitkin, S. Y.; Pavlinov, A. I.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Planinic, M.; Pluta, J.; Poljak, N.; Porile, N.; Poskanzer, A. M.; Potekhin, M.; Potrebenikova, E.; Potukuchi, B. V. K. S.; Prindle, D.; Pruneau, C.; Putschke, J.; Qattan, I. A.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Razin, S. V.; Reinnarth, J.; Relyea, D.; Ridiger, A.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sarsour, M.; Savin, I.; Sazhin, P. S.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shabetai, A.; Shahaliev, E.; Shao, M.; Sharma, M.; Shen, W. Q.; Shimanskiy, S. S.; Sichtermann, E.; Simon, F.; Singaraju, R. N.; Smirnov, N.; Snellings, R.; Sorensen, P.; Sowinski, J.; Speltz, J.; Spinka, H. M.; Srivastava, B.; Stadnik, A.; Stanislaus, T. D. S.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Z.; Surrow, B.; Symons, T. J. M.; Szanto de Toledo, A.; Takahashi, J.; Tang, A. H.; Tarnowsky, T.; Thomas, J. H.; Timmins, A. R.; Timoshenko, S.; Tokarev, M.; Trainor, T. A.; Trentalange, S.; Tribble, R. E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van der Kolk, N.; van Leeuwen, M.; Vander Molen, A. M.; Varma, R.; Vasilevski, I. M.; Vasiliev, A. N.; Vernet, R.; Vigdor, S. E.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Waggoner, W. T.; Wang, F.; Wang, G.; Wang, J. S.; Wang, X. L.; Wang, Y.; Watson, J. W.; Webb, J. C.; Westfall, G. D.; Wetzler, A.; Whitten, C., Jr.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, J.; Wu, J.; Xu, N.; Xu, Q. H.; Xu, Z.; Yepes, P.; Yoo, I.-K.; Yue, Q.; Yurevich, V. I.; Zhan, W.; Zhang, H.; Zhang, W. M.; Zhang, Y.; Zhang, Z. P.; Zhao, Y.; Zhong, C.; Zoulkarneev, R.; Zoulkarneeva, Y.; Zubarev, A. N.; Zuo, J. X.; STAR Collaboration

    2007-11-01

    We study the energy dependence of the transverse momentum (pT) spectra for charged pions, protons and anti-protons for Au + Au collisions at √{sNN} = 62.4 and 200 GeV. Data are presented at mid-rapidity (| y | < 0.5) for 0.2 <pT < 12GeV / c. In the intermediate pT region (2 <pT < 6GeV / c), the nuclear modification factor is higher at 62.4 GeV than at 200 GeV, while at higher pT (pT > 7GeV / c) the modification is similar for both energies. The p /π+ and pbar /π- ratios for central collisions at √{sNN} = 62.4GeV peak at pT ≃ 2GeV / c. In the pT range where recombination is expected to dominate, the p /π+ ratios at 62.4 GeV are larger than at 200 GeV, while the pbar /π- ratios are smaller. For pT > 2GeV / c, the pbar /π- ratios at the two beam energies are independent of pT and centrality indicating that the dependence of the pbar /π- ratio on pT does not change between 62.4 and 200 GeV. These findings challenge various models incorporating jet quenching and/or constituent quark coalescence.

  10. Cross section and transverse single-spin asymmetry of muons from open heavy-flavor decays in polarized p + p collisions at s = 200 ? ? GeV

    DOE PAGES

    Aidala, C.; Ajitanand, N. N.; Akiba, Y.; ...

    2017-06-01

    The cross section and transverse single-spin asymmetries of μ - and μ + from open heavy-flavor decays in polarized p+p collisions at √s = 200 GeV were measured in this paper by the PHENIX experiment during 2012 at the Relativistic Heavy Ion Collider. Because heavy-flavor production is dominated by gluon-gluon interactions at √s = 200 GeV, these measurements offer a unique opportunity to obtain information on the trigluon correlation functions. The measurements are performed at forward and backward rapidity (1.4 < |y| < 2.0) over the transverse momentum range of 1.25 < p T < 7 GeV/c for the crossmore » section and 1.25 < p T < 5 GeV/c for the asymmetry measurements. The obtained cross section is compared to a fixed-order-plus-next-to-leading-log perturbative-quantum-chromodynamics calculation. Finally, the asymmetry results are consistent with zero within uncertainties, and a model calculation based on twist-3 three-gluon correlations agrees with the data.« less

  11. Cross section and transverse single-spin asymmetry of muons from open heavy-flavor decays in polarized p +p collisions at √{s }=200 GeV

    NASA Astrophysics Data System (ADS)

    Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Akimoto, R.; Alexander, J.; Alfred, M.; Aoki, K.; Apadula, N.; Asano, H.; Atomssa, E. T.; Awes, T. C.; Ayuso, C.; Azmoun, B.; Babintsev, V.; Bagoly, A.; Bai, M.; Bai, X.; Bannier, B.; Barish, K. N.; Bathe, S.; Baublis, V.; Baumann, C.; Baumgart, S.; Bazilevsky, A.; Beaumier, M.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Black, D.; Blau, D. S.; Boer, M.; Bok, J. S.; Boyle, K.; Brooks, M. L.; Bryslawskyj, J.; Buesching, H.; Bumazhnov, V.; Butler, C.; Butsyk, S.; Campbell, S.; Canoa Roman, V.; Chen, C.-H.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Choi, S.; Christiansen, P.; Chujo, T.; Cianciolo, V.; Cole, B. A.; Connors, M.; Cronin, N.; Crossette, N.; Csanád, M.; Csörgő, T.; Danley, T. W.; Datta, A.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Ding, L.; Do, J. H.; D'Orazio, L.; Drapier, O.; Drees, A.; Drees, K. A.; Dumancic, M.; Durham, J. M.; Durum, A.; Elder, T.; Engelmore, T.; Enokizono, A.; Esumi, S.; Eyser, K. O.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fleuret, F.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukao, Y.; Fukuda, Y.; Fusayasu, T.; Gainey, K.; Gal, C.; Garg, P.; Garishvili, A.; Garishvili, I.; Ge, H.; Giordano, F.; Glenn, A.; Gong, X.; Gonin, M.; Goto, Y.; Granier de Cassagnac, R.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gu, Y.; Gunji, T.; Guragain, H.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haseler, T. O. S.; Hashimoto, K.; Hayano, R.; He, X.; Hemmick, T. K.; Hester, T.; Hill, J. C.; Hill, K.; Hollis, R. S.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Ichihara, T.; Ikeda, Y.; Imai, K.; Imazu, Y.; Imrek, J.; Inaba, M.; Iordanova, A.; Isenhower, D.; Isinhue, A.; Ito, Y.; Ivanishchev, D.; Jacak, B. V.; Jeon, S. J.; Jezghani, M.; Ji, Z.; Jia, J.; Jiang, X.; Johnson, B. M.; Joo, K. S.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kamin, J.; Kanda, S.; Kang, B. H.; Kang, J. H.; Kang, J. S.; Kapukchyan, D.; Kapustinsky, J.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Key, J. A.; Khachatryan, V.; Khandai, P. K.; Khanzadeev, A.; Kijima, K. M.; Kim, C.; Kim, D. J.; Kim, E.-J.; Kim, M.; Kim, M. H.; Kim, Y.-J.; Kim, Y. K.; Kincses, D.; Kistenev, E.; Klatsky, J.; Kleinjan, D.; Kline, P.; Koblesky, T.; Kofarago, M.; Komkov, B.; Koster, J.; Kotchetkov, D.; Kotov, D.; Krizek, F.; Kudo, S.; Kurita, K.; Kurosawa, M.; Kwon, Y.; Lacey, R.; Lai, Y. S.; Lajoie, J. G.; Lallow, E. O.; Lebedev, A.; Lee, D. M.; Lee, G. H.; Lee, J.; Lee, K. B.; Lee, K. S.; Lee, S. H.; Leitch, M. J.; Leitgab, M.; Leung, Y. H.; Lewis, B.; Lewis, N. A.; Li, X.; Li, X.; Lim, S. H.; Liu, L. D.; Liu, M. X.; Loggins, V.-R.; Lokos, S.; Lynch, D.; Maguire, C. F.; Majoros, T.; Makdisi, Y. I.; Makek, M.; Malaev, M.; Manion, A.; Manko, V. I.; Mannel, E.; Masuda, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Meles, A.; Mendoza, M.; Meredith, B.; Metzger, W. J.; Miake, Y.; Mibe, T.; Mignerey, A. C.; Mihalik, D. E.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Miyasaka, S.; Mizuno, S.; Mohanty, A. K.; Mohapatra, S.; Moon, T.; Morrison, D. P.; Morrow, S. I. M.; Moskowitz, M.; Moukhanova, T. V.; Murakami, T.; Murata, J.; Mwai, A.; Nagae, T.; Nagai, K.; Nagamiya, S.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakamiya, Y.; Nakamura, K. R.; Nakamura, T.; Nakano, K.; Nattrass, C.; Netrakanti, P. K.; Nihashi, M.; Niida, T.; Nouicer, R.; Novák, T.; Novitzky, N.; Novotny, R.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Oide, H.; Okada, K.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ozawa, K.; Pak, R.; Pantuev, V.; Papavassiliou, V.; Park, I. H.; Park, J. S.; Park, S.; Park, S. K.; Pate, S. F.; Patel, L.; Patel, M.; Peng, J.-C.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perezlara, C. E.; Perry, J.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pisani, R. P.; Pun, A.; Purschke, M. L.; Qu, H.; Radzevich, P. V.; Rak, J.; Ravinovich, I.; Read, K. F.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richardson, E.; Richford, D.; Rinn, T.; Riveli, N.; Roach, D.; Rolnick, S. D.; Rosati, M.; Rowan, Z.; Runchey, J.; Ryu, M. S.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Sawada, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seele, J.; Seidl, R.; Sekiguchi, Y.; Sen, A.; Seto, R.; Sett, P.; Sexton, A.; Sharma, D.; Shaver, A.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shoji, K.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Singh, B. K.; Singh, C. P.; Singh, V.; Skoby, M. J.; Skolnik, M.; Slunečka, M.; Smith, K. L.; Solano, S.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Steinberg, P.; Stenlund, E.; Stepanov, M.; Ster, A.; Stoll, S. P.; Stone, M. R.; Sugitate, T.; Sukhanov, A.; Sun, J.; Syed, S.; Takahara, A.; Takeda, A.; Taketani, A.; Tanaka, Y.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarnai, G.; Tennant, E.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Tomášek, M.; Torii, H.; Towell, C. L.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vargyas, M.; Vazquez-Carson, S.; Vazquez-Zambrano, E.; Veicht, A.; Velkovska, J.; Vértesi, R.; Virius, M.; Vrba, V.; Vznuzdaev, E.; Wang, X. R.; Wang, Z.; Watanabe, D.; Watanabe, K.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; Whitaker, S.; Wolin, S.; Wong, C. P.; Woody, C. L.; Wysocki, M.; Xia, B.; Xu, C.; Xu, Q.; Yamaguchi, Y. L.; Yanovich, A.; Yin, P.; Yokkaichi, S.; Yoo, J. H.; Yoon, I.; You, Z.; Younus, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zharko, S.; Zhou, S.; Zou, L.; Phenix Collaboration

    2017-06-01

    The cross section and transverse single-spin asymmetries of μ- and μ+ from open heavy-flavor decays in polarized p +p collisions at √{s }=200 GeV were measured by the PHENIX experiment during 2012 at the Relativistic Heavy Ion Collider. Because heavy-flavor production is dominated by gluon-gluon interactions at √{s }=200 GeV , these measurements offer a unique opportunity to obtain information on the trigluon correlation functions. The measurements are performed at forward and backward rapidity (1.4 <|y |<2.0 ) over the transverse momentum range of 1.25 <pT<7 GeV /c for the cross section and 1.25 <pT<5 GeV /c for the asymmetry measurements. The obtained cross section is compared to a fixed-order-plus-next-to-leading-log perturbative-quantum-chromodynamics calculation. The asymmetry results are consistent with zero within uncertainties, and a model calculation based on twist-3 three-gluon correlations agrees with the data.

  12. A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond

    NASA Astrophysics Data System (ADS)

    Yasutake, Nobuaki; Azuma, Atsushi; Ishida, Tatsuya; Ohuchi, Kazuya; Aoki, Nobutoshi; Kusunoki, Naoki; Mori, Shinji; Mizushima, Ichiro; Morooka, Tetsu; Kawanaka, Shigeru; Toyoshima, Yoshiaki

    2007-11-01

    A novel SiGe-S/D structure for high performance pMOSFET called two-step recessed SiGe-source/drain (S/D) is developed with careful optimization of recessed SiGe-S/D structure. With this method, hole mobility, short channel effect and S/D resistance in pMOSFET are improved compared with conventional recessed SiGe-S/D structure. To enhance device performance such as drain current drivability, SiGe region has to be closer to channel region. Then, conventional deep SiGe-S/D region with carefully optimized shallow SiGe SDE region showed additional device performance improvement without SCE degradation. As a result, high performance 24 nm gate length pMOSFET was demonstrated with drive current of 451 μA/μm at ∣ Vdd∣ of 0.9 V and Ioff of 100 nA/μm (552 μA/μm at ∣ Vdd∣ of 1.0 V). Furthermore, by combining with Vdd scaling, we indicate the extendability of two-step recessed SiGe-S/D structure down to 15 nm node generation.

  13. Nonperturbative-transverse-momentum effects and evolution in dihadron and direct photon-hadron angular correlations in p +p collisions at √{s } =510 GeV

    NASA Astrophysics Data System (ADS)

    Adare, A.; Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Akimoto, R.; Alexander, J.; Alfred, M.; Andrieux, V.; Aoki, K.; Apadula, N.; Aramaki, Y.; Asano, H.; Atomssa, E. T.; Awes, T. C.; Ayuso, C.; Azmoun, B.; Babintsev, V.; Bai, M.; Bai, X.; Bandara, N. S.; Bannier, B.; Barish, K. N.; Bathe, S.; Baublis, V.; Baumann, C.; Baumgart, S.; Bazilevsky, A.; Beaumier, M.; Beckman, S.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Black, D.; Blau, D. S.; Boer, M.; Bok, J. S.; Boyle, K.; Brooks, M. L.; Bryslawskyj, J.; Buesching, H.; Bumazhnov, V.; Butler, C.; Butsyk, S.; Campbell, S.; Canoa Roman, V.; Cervantes, R.; Chen, C.-H.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Choi, S.; Christiansen, P.; Chujo, T.; Cianciolo, V.; Citron, Z.; Cole, B. A.; Connors, M.; Cronin, N.; Crossette, N.; Csanád, M.; Csörgő, T.; Danley, T. W.; Datta, A.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Ding, L.; Dion, A.; Dixit, D.; Do, J. H.; D'Orazio, L.; Drapier, O.; Drees, A.; Drees, K. A.; Dumancic, M.; Durham, J. M.; Durum, A.; Elder, T.; Engelmore, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Eyser, K. O.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fleuret, F.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukao, Y.; Fukuda, Y.; Fusayasu, T.; Gainey, K.; Gal, C.; Gallus, P.; Garg, P.; Garishvili, A.; Garishvili, I.; Ge, H.; Giordano, F.; Glenn, A.; Gong, X.; Gonin, M.; Goto, Y.; Granier de Cassagnac, R.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gu, Y.; Gunji, T.; Guragain, H.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamilton, H. F.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haseler, T. O. S.; Hashimoto, K.; Hayano, R.; He, X.; Hemmick, T. K.; Hester, T.; Hill, J. C.; Hill, K.; Hollis, R. S.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Ichihara, T.; Ikeda, Y.; Imai, K.; Imazu, Y.; Imrek, J.; Inaba, M.; Iordanova, A.; Isenhower, D.; Isinhue, A.; Ito, Y.; Ivanishchev, D.; Jacak, B. V.; Jeon, S. J.; Jezghani, M.; Ji, Z.; Jia, J.; Jiang, X.; Johnson, B. M.; Joo, E.; Joo, K. S.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kamin, J.; Kanda, S.; Kang, B. H.; Kang, J. H.; Kang, J. S.; Kapukchyan, D.; Kapustinsky, J.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Key, J. A.; Khachatryan, V.; Khandai, P. K.; Khanzadeev, A.; Kihara, K.; Kijima, K. M.; Kim, C.; Kim, D. H.; Kim, D. J.; Kim, E.-J.; Kim, H.-J.; Kim, M. H.; Kim, M.; Kim, Y.-J.; Kim, Y. K.; Kincses, D.; Kistenev, E.; Klatsky, J.; Kleinjan, D.; Kline, P.; Koblesky, T.; Kofarago, M.; Komkov, B.; Koster, J.; Kotchetkov, D.; Kotov, D.; Krizek, F.; Kudo, S.; Kurita, K.; Kurosawa, M.; Kwon, Y.; Lacey, R.; Lai, Y. S.; Lajoie, J. G.; Lallow, E. O.; Lebedev, A.; Lee, D. M.; Lee, G. H.; Lee, J.; Lee, K. B.; Lee, K. S.; Lee, S.; Lee, S. H.; Leitch, M. J.; Leitgab, M.; Leung, Y. H.; Lewis, B.; Lewis, N. A.; Li, X.; Li, X.; Lim, S. H.; Liu, L. D.; Liu, M. X.; Loggins, V.-R.; Loggins, V.-R.; Lovasz, K.; Lynch, D.; Maguire, C. F.; Majoros, T.; Makdisi, Y. I.; Makek, M.; Malaev, M.; Manion, A.; Manko, V. I.; Mannel, E.; Masuda, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Meles, A.; Mendoza, M.; Meredith, B.; Miake, Y.; Mibe, T.; Mignerey, A. C.; Mihalik, D. E.; Miller, A. J.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Miyasaka, S.; Mizuno, S.; Mohanty, A. K.; Mohapatra, S.; Montuenga, P.; Moon, T.; Morrison, D. P.; Morrow, S. I. M.; Moskowitz, M.; Moukhanova, T. V.; Murakami, T.; Murata, J.; Mwai, A.; Nagae, T.; Nagai, K.; Nagamiya, S.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakamiya, Y.; Nakamura, K. R.; Nakamura, T.; Nakano, K.; Nattrass, C.; Netrakanti, P. K.; Nihashi, M.; Niida, T.; Nouicer, R.; Novák, T.; Novitzky, N.; Novotny, R.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Oide, H.; Okada, K.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ottino, G. J.; Ozawa, K.; Pak, R.; Pantuev, V.; Papavassiliou, V.; Park, I. H.; Park, J. S.; Park, S.; Park, S. K.; Pate, S. F.; Patel, L.; Patel, M.; Peng, J.-C.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perezlara, C. E.; Perry, J.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pinson, R.; Pisani, R. P.; Pun, A.; Purschke, M. L.; Qu, H.; Rak, J.; Ravinovich, I.; Read, K. F.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richardson, E.; Richford, D.; Rinn, T.; Riveli, N.; Roach, D.; Rolnick, S. D.; Rosati, M.; Rowan, Z.; Rubin, J. G.; Runchey, J.; Ryu, M. S.; Safonov, A. S.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Sawada, S.; Schaefer, B.; Schmoll, B. K.; Schmoll, B. K.; Sedgwick, K.; Seele, J.; Seidl, R.; Sekiguchi, Y.; Sen, A.; Seto, R.; Sett, P.; Sexton, A.; Sharma, D.; Shaver, A.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shioya, T.; Shoji, K.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Singh, B. K.; Singh, C. P.; Singh, V.; Skolnik, M.; Slunečka, M.; Smith, K. L.; Snowball, M.; Solano, S.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Steinberg, P.; Stenlund, E.; Stepanov, M.; Ster, A.; Stoll, S. P.; Stone, M. R.; Sugitate, T.; Sukhanov, A.; Sumita, T.; Sun, J.; Syed, S.; Sziklai, J.; Takahara, A.; Takeda, A.; Taketani, A.; Tanaka, Y.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarnai, G.; Tennant, E.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Tomášek, M.; Torii, H.; Towell, C. L.; Towell, M.; Towell, R.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vargyas, M.; Vazquez-Carson, S.; Vazquez-Zambrano, E.; Veicht, A.; Velkovska, J.; Vértesi, R.; Virius, M.; Vrba, V.; Vukman, N.; Vznuzdaev, E.; Wang, X. R.; Wang, Z.; Watanabe, D.; Watanabe, K.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; Whitaker, S.; Wolin, S.; Wong, C. P.; Woody, C. L.; Wysocki, M.; Xia, B.; Xu, C.; Xu, Q.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yamamoto, H.; Yanovich, A.; Yin, P.; Yokkaichi, S.; Yoo, J. H.; Yoon, I.; You, Z.; Younus, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zharko, S.; Zhou, S.; Zou, L.; Phenix Collaboration

    2017-04-01

    Dihadron and isolated direct photon-hadron angular correlations are measured in p +p collisions at √{s }=510 GeV . Correlations of charged hadrons of 0.7 <pT<10 GeV /c with π0 mesons of 4 <pT<15 GeV /c or isolated direct photons of 7 <pT<15 GeV /c are used to study nonperturbative effects generated by initial-state partonic transverse momentum and final-state transverse momentum from fragmentation. The nonperturbative behavior is characterized by measuring the out-of-plane transverse momentum component pout perpendicular to the axis of the trigger particle, which is the high-pT direct photon or π0. Nonperturbative evolution effects are extracted from Gaussian fits to the away-side inclusive-charged-hadron yields for different trigger-particle transverse momenta (pTtrig ). The Gaussian widths and root mean square of pout are reported as a function of the interaction hard scale pTtrig to investigate possible transverse-momentum-dependent evolution differences between the π0-h± and direct photon-h± correlations and factorization breaking effects. The widths are found to decrease with pTtrig , which indicates that the Collins-Soper-Sterman soft factor is not driving the evolution with the hard scale in nearly back-to-back dihadron and direct photon-hadron production in p +p collisions. This behavior is in contrast to Drell-Yan and semi-inclusive deep-inelastic scattering measurements.

  14. Multiparticle jets from π+/K+/p p collisions at 147 GeV/C compared to e+e- annihilations

    NASA Astrophysics Data System (ADS)

    Ratti, Sergio P.

    1981-02-01

    The data presented here have been collected by the International Hybrid Spectrometer Consortium in the 30″ B.C. hybrid spectrometer exposed to a 147 GeV/C positive tagged beam made of 47% π+; 45% p; 8% K+(?s = 16.7 GeV) at Fermilab. The sample consists of 15802 events with at least 4 prongs (11822 events with at least 6 prongs) fully measured and reconstructed with an accuracy Δp/p<0.5%. To account for second-measurements still to be done, the events are weighted according to the measured topological cross sections. The variables used (Sphericity S and thrust T) are evaluated in a 3-dimensional c.m. momentum space defined by the principal axes resulting from the diagonalization of the 3×3 matrix Tαβ = ∑i[p2iδαβ-pαipβi]; α,β = x,y,z; pxi,pyi,pzi are the c.m. momentum components of particle i (x-direction along the beam). Their use in hardron hadron physics was suggested long ago.

  15. High-pressure-assisted synthesis of high-volume ZnGeP2 polycrystalline

    NASA Astrophysics Data System (ADS)

    Huang, Changbao; Wu, Haixin; Xiao, Ruichun; Chen, Shijing; Ma, Jiaren

    2018-06-01

    The pnictide and chalcogenide semiconductors are promising materials for the applications in the field of photoelectric. High-purity and high-volume polycrystalline required in the real-world applications is hard to be synthesized due to the high vapor pressure of phosphorus and sulfur components at high temperature. A new high-pressure-resisted method was used to investigate the synthesis of the nonlinear-optical semiconductor ZnGeP2. The high-purity ZnGeP2 polycrystalline material of approximately 500 g was synthesized in one run, which enables the preparation of nominally stoichiometric material. Since increasing internal pressure resistance of quartz crucible and reducing the reaction space, the high-pressure-resisted method can be used to rapidly synthesize other pnictide and chalcogenide semiconductors and control the components ratio.

  16. Comparative study on crystallization characteristics of amorphous Ge2Sb2Te5 films by an ultraviolet laser radiation and isothermal annealing

    NASA Astrophysics Data System (ADS)

    Zhu, Z.; Liu, F. R.; Wang, Z. M.; Fan, Z. K.; Liu, F.; Sun, N. X.

    2015-04-01

    A comparative study on crystallization characteristics of amorphous Ge2Sb2Te5 (GST) films induced by an ultraviolet pulse laser and isothermal annealing was carried out by using transmission electron microscopy (TEM) and Raman scattering. TEM observations showed that the mean grain size induced by a pulse laser was in the nanoscale. A more complete crystallization in the 50 nm thick GST film was obtained which was ascribed to the effect of thermal convection produced in a thinner GST film, however, when the film thickness was over 70 nm, no significant decrease in the mean grain size was found because of the effect of heating mode, where a surface heat source by the ultraviolet laser radiation caused a quick temperature drop. The body heating mode at the isothermal annealing condition made the mean grain size increase remarkably with the increase of film thickness, which could be up to the submicron scale, relative to the size of film thickness. The Raman spectrum analysis showed that a red shift was observed in laser induced Ge2Sb2Te5 films as compared to the isothermal annealing samples, which was caused by the resultant stress of the thermal stress and phase transformation stress.

  17. The minor house dust mite allergen Der p 13 is a fatty acid-binding protein and an activator of a TLR2-mediated innate immune response.

    PubMed

    Satitsuksanoa, P; Kennedy, M; Gilis, D; Le Mignon, M; Suratannon, N; Soh, W T; Wongpiyabovorn, J; Chatchatee, P; Vangveravong, M; Rerkpattanapipat, T; Sangasapaviliya, A; Piboonpocanun, S; Nony, E; Ruxrungtham, K; Jacquet, A

    2016-10-01

    The house dust mite (HDM) allergen Der p 13 could be a lipid-binding protein able to activate key innate signaling pathways in the initiation of the allergic response. We investigated the IgE reactivity of recombinant Der p 13 (rDer p 13), its lipid-binding activities, and its capacity to stimulate airway epithelium cells. Purified rDer p 13 was characterized by mass spectrometry, circular dichroism, fluorescence-based lipid-binding assays, and in silico structural prediction. IgE-binding activity and allergenic potential of Der p 13 were examined by ELISA, basophil degranulation assays, and in vitro airway epithelial cell activation assays. Protein modeling and biophysical analysis indicated that Der p 13 adopts a β-barrel structure with a predominately apolar pocket representing a potential binding site for hydrophobic ligands. Fluorescent lipid-binding assays confirmed that the protein is highly selective for ligands and that it binds a fatty acid with a dissociation constant typical of lipid transporter proteins. The low IgE-binding frequency (7%, n = 224) in Thai HDM-allergic patients as well as the limited propensity to activate basophil degranulation classifies Der p 13 as a minor HDM allergen. Nevertheless, the protein with its presumptively associated lipid(s) triggered the production of IL-8 and GM-CSF in respiratory epithelial cells through a TLR2-, MyD88-, NF-kB-, and MAPK-dependent signaling pathway. Although a minor allergen, Der p 13 may, through its lipid-binding capacity, play a role in the initiation of the HDM-allergic response through TLR2 activation. © 2016 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  18. Measuring single-shot, picosecond optical damage threshold in Ge, Si, and sapphire with a 5.1-μm laser

    DOE PAGES

    Agustsson, R.; Pogorelsky, I.; Arab, E.; ...

    2015-11-18

    Optical photonic structures driven by picosecond, GW-class lasers are emerging as promising novel sources of electron beams and high quality X-rays. Due to quadratic dependence on wavelength of the laser ponderomotive potential, the performance of such sources scales very favorably towards longer drive laser wavelengths. However, to take full advantage of photonic structures at mid-IR spectral region, it is important to determine optical breakdown limits of common optical materials. To this end, an experimental study was carried out at a wavelength of 5 µm, using a frequency-doubled CO 2 laser source, with 5 ps pulse length. Single-shot optical breakdowns weremore » detected and characterized at different laser intensities, and damage threshold values of 0.2, 0.3, and 7.0 J/cm 2, were established for Ge, Si, and sapphire, respectively. As a result, the measured damage threshold values were stable and repeatable within individual data sets, and across varying experimental conditions.« less

  19. Measuring single-shot, picosecond optical damage threshold in Ge, Si, and sapphire with a 5.1-μm laser

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Agustsson, R.; Pogorelsky, I.; Arab, E.

    Optical photonic structures driven by picosecond, GW-class lasers are emerging as promising novel sources of electron beams and high quality X-rays. Due to quadratic dependence on wavelength of the laser ponderomotive potential, the performance of such sources scales very favorably towards longer drive laser wavelengths. However, to take full advantage of photonic structures at mid-IR spectral region, it is important to determine optical breakdown limits of common optical materials. To this end, an experimental study was carried out at a wavelength of 5 µm, using a frequency-doubled CO 2 laser source, with 5 ps pulse length. Single-shot optical breakdowns weremore » detected and characterized at different laser intensities, and damage threshold values of 0.2, 0.3, and 7.0 J/cm 2, were established for Ge, Si, and sapphire, respectively. As a result, the measured damage threshold values were stable and repeatable within individual data sets, and across varying experimental conditions.« less

  20. The C-terminal region of Ge-1 presents conserved structural features required for P-body localization.

    PubMed

    Jinek, Martin; Eulalio, Ana; Lingel, Andreas; Helms, Sigrun; Conti, Elena; Izaurralde, Elisa

    2008-10-01

    The removal of the 5' cap structure by the DCP1-DCP2 decapping complex irreversibly commits eukaryotic mRNAs to degradation. In human cells, the interaction between DCP1 and DCP2 is bridged by the Ge-1 protein. Ge-1 contains an N-terminal WD40-repeat domain connected by a low-complexity region to a conserved C-terminal domain. It was reported that the C-terminal domain interacts with DCP2 and mediates Ge-1 oligomerization and P-body localization. To understand the molecular basis for these functions, we determined the three-dimensional crystal structure of the most conserved region of the Drosophila melanogaster Ge-1 C-terminal domain. The region adopts an all alpha-helical fold related to ARM- and HEAT-repeat proteins. Using structure-based mutants we identified an invariant surface residue affecting P-body localization. The conservation of critical surface and structural residues suggests that the C-terminal region adopts a similar fold with conserved functions in all members of the Ge-1 protein family.

  1. 75 FR 9451 - Notice of Receipt and Availability of Environmental Report Supplement 2 for the Proposed GE...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-02

    ... Availability of Environmental Report Supplement 2 for the Proposed GE-Hitachi Global Laser Enrichment Laser- Based Uranium Enrichment Facility On January 13, 2009, GE-Hitachi Global Laser Enrichment, LLC (GLE) was..., operation, and decommissioning of a laser-based uranium enrichment facility. The proposed facility would be...

  2. The spin-forbidden a 4Σ--X 2Π1/2 transition of GeH detected in absorption using intracavity laser spectroscopy

    NASA Astrophysics Data System (ADS)

    Harms, Jack C.; O'Brien, Leah C.; O'Brien, James J.

    2018-05-01

    The a 4Σ--X 2Π1/2 transition of GeH has been recorded in absorption for the first time using Intracavity Laser Spectroscopy (ILS). The GeH molecules were produced in a 0.40-0.60 A DC plasma discharge inside an aluminum hollow cathode, using 500 mTorr of Ar, 100 mTorr of H2, and 200 mTorr of GeH4. This cathode is located within the resonator cavity of a Coherent Verdi™ V-10 pumped dye laser. Effective path lengths for this series of measurements using the ILS method ranged from 2 to 7 km. Spectra were calibrated using the absorption spectrum of I2 collected from an extracavity cell, the I2 transmission spectrum from Salami and Ross, J. Mol. Spectrosc. 223(1), 157 (2005) and PGOPHER's [C. M. Western, J. Quant. Spectrosc. Radiat. Transfer 186, 221-242 (2016)] calibration feature. Differences in peak positions between calibrated experimental spectra and the reference data were on average less than ±0.002 cm-1. All eight branches expected to have appreciable intensity for the transition have been identified, and isotopologue splitting was observed in features of 5 of the 8 identified rotational branches. Molecular constants have been obtained for the a 4Σ- states of 70GeH (20.84% abundant), 72GeH (27.54% abundant), and 74GeH (36.28% abundant). The transitions were fit using PGOPHER, holding the ground state constants fixed to the values reported by Towle and Brown [Mol. Phys. 78(2), 249 (1993)]. The constants for the a 4Σ- state of 74GeH determined by the fit are T0 = 16 751.5524(13) cm-1, B0 = 6.764 912(33) cm-1, D0 = 0.459 60(17) × 10-3 cm-1, λSS = 9.7453(12) cm-1, λD = 0.468(14) × 10-3 cm-1, γ = 0.077 878(84), and γS = -0.361(77) × 10-3 cm-1.

  3. Observation of excess flux for negative cosmic ray penetrating particles in bubble chamber "SKAT" for momentum range (30GeV/c<126GeV/c)

    NASA Astrophysics Data System (ADS)

    Bazhutov, Yu. N.; Baranov, D. S.

    2001-08-01

    There are presented the first results of the new heavy stable cosmic ray particles search in the bubble chamber "SKAT" (450 x 160 x 90 cm3 ), which was exposed in the neutrino beam of Serpukhov Accelerator during 1976 - 1992 years and was viewed along the horizontal direction so as the magnet field direction (MDM > 150 GeV/c). From looking over 1,270 stills (1 roll for April 23, 1979) it was selected 757 tracks of cosmic ray particles with zenith angle θ < 45°, track length - L > 50 cm and momentum P>2.0GeV/c. From this events there were constructed momentum spectrums for both negative and positive vertical cosmic ray penetrating particles in the (2.0 - 126) GeV/c range and calculated their charge ratio. For positive particles the momentum spectrum has normal shape in all studied range the same as for negative particles but only for momentum range (2.0 - 32) GeV/c and charge ratio for this range is normal and the same as for cosmic muons. But for momentum P>32GeV/c it was observed negative particles excess flux (~10-5 cm-2 s-1 sr-1 ) with changed charge ratio - R = 0.62 +/0.18 (˜>3.5σ) for momentum range (32GeV/c<126GeV/c). The same anomalous results were observed from another "SKAT" 3 rolls (1717 stills in December 11-12, 1991). Here it was measured from selected near vertical 736 events for momentum range (36GeV/c<180GeV/c) the charge ratio - R = 0.67 +/0.19 (˜>3σ) and for momentum range (3.6GeV/c<36GeV/c) normal charge ratio - R = 1.29 +/0.14. INTRODACTION. The first positive results on new heavy charged stable cosmic ray particles registration, received on the scintillation telescope Doch-4 in July 1999 [1-3], initiated their search on another already existed installations, which have sensitiveness to some kind of these particles parameters. The main of these parameters are following: 1) the possibility to register charged particles in near vertical direction with large acceptance and operation time (S-T>107 cm2 ṡsṡsr); 2) the installation place

  4. High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Pastor, David; Gandhi, Hemi H.; Monmeyran, Corentin P.; Akey, Austin J.; Milazzo, Ruggero; Cai, Yan; Napolitani, Enrico; Gwilliam, Russell M.; Crowe, Iain F.; Michel, Jurgen; Kimerling, L. C.; Agarwal, Anuradha; Mazur, Eric; Aziz, Michael J.

    2018-04-01

    Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 1020 cm-3 n+ carrier concentration in tensile-strained epitaxial germanium-on-silicon. Scanning electron microscopy shows that after laser treatment, samples implanted with P have an ablated surface, whereas P + F co-implanted samples have good crystallinity and a smooth surface topography. We characterize P and F concentration depth profiles using secondary ion mass spectrometry and spreading resistance profiling. The peak carrier concentration, 1020 cm-3 at 80 nm below the surface, coincides with the peak F concentration, illustrating the key role of F in increasing donor activation. Cross-sectional transmission electron microscopy of the co-implanted sample shows that the Ge epilayer region damaged during implantation is a single crystal after PLM. High-resolution X-ray diffraction and Raman spectroscopy measurements both indicate that the as-grown epitaxial layer strain is preserved after PLM. These results demonstrate that co-implantation and PLM can achieve the combination of n+ carrier concentration and strain in Ge epilayers necessary for next-generation, high-performance Ge-on-Si devices.

  5. Vertical Ge photodetector base on InP taper waveguide

    NASA Astrophysics Data System (ADS)

    Amiri, Iraj Sadegh; Ariannejad, M. M.; Azzuhri, S. R. B.; Anwar, T.; Kouhdaragh, V.; Yupapin, P.

    2018-06-01

    In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition.

  6. Nonperturbative-transverse-momentum effects and evolution in dihadron and direct photon-hadron angular correlations in p + p collisions at s = 510 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adare, A.; Aidala, C.; Ajitanand, N. N.

    Dihadron and isolated direct photon-hadron angular correlations are measured in p+p collisions at √s=510 GeV. Correlations of charged hadrons of 0.7T<10 GeV/c with π 0 mesons of 4T<15 GeV/c or isolated direct photons of 7T direct photon or π 0. Nonperturbative evolution effects are extracted from Gaussian fits to the away-side inclusive-charged-hadron yields for different trigger-particle transverse momenta (pmore » $$trig\\atop{T}$$). The Gaussian widths and root mean square of p out are reported as a function of the interaction hard scale p$$trig\\atop{T}$$ to investigate possible transverse-momentum-dependent evolution differences between the π 0-h ± and direct photon-h ± correlations and factorization breaking effects. The widths are found to decrease with p$$trig\\atop{T}$$, which indicates that the Collins-Soper-Sterman soft factor is not driving the evolution with the hard scale in nearly back-to-back dihadron and direct photon-hadron production in p+p collisions. This behavior is in contrast to Drell-Yan and semi-inclusive deep-inelastic scattering measurements.« less

  7. Nonperturbative-transverse-momentum effects and evolution in dihadron and direct photon-hadron angular correlations in p + p collisions at s = 510 GeV

    DOE PAGES

    Adare, A.; Aidala, C.; Ajitanand, N. N.; ...

    2017-04-04

    Dihadron and isolated direct photon-hadron angular correlations are measured in p+p collisions at √s=510 GeV. Correlations of charged hadrons of 0.7T<10 GeV/c with π 0 mesons of 4T<15 GeV/c or isolated direct photons of 7T direct photon or π 0. Nonperturbative evolution effects are extracted from Gaussian fits to the away-side inclusive-charged-hadron yields for different trigger-particle transverse momenta (pmore » $$trig\\atop{T}$$). The Gaussian widths and root mean square of p out are reported as a function of the interaction hard scale p$$trig\\atop{T}$$ to investigate possible transverse-momentum-dependent evolution differences between the π 0-h ± and direct photon-h ± correlations and factorization breaking effects. The widths are found to decrease with p$$trig\\atop{T}$$, which indicates that the Collins-Soper-Sterman soft factor is not driving the evolution with the hard scale in nearly back-to-back dihadron and direct photon-hadron production in p+p collisions. This behavior is in contrast to Drell-Yan and semi-inclusive deep-inelastic scattering measurements.« less

  8. TWO CRITERIA FOR WEAK GENERALIZED LOCALIZATION FOR MULTIPLE TRIGONOMETRIC FOURIER SERIES OF FUNCTIONS IN L_p, p \\ge 1

    NASA Astrophysics Data System (ADS)

    Bloshanskiĭ, I. L.

    1986-04-01

    The concept of weak generalized localization almost everywhere is introduced. For the multiple Fourier series of a function f, weak generalized localization almost everywhere holds on the set E (E is an arbitrary set of positive measure E \\subset T^N = \\lbrack- \\pi, \\pi\\rbrack^N) if the condition f(x) \\in L_p(T^N), p \\ge 1, f = 0 on E implies that the indicated series converges almost everywhere on some subset E_1 \\subset E of positive measure. For a large class of sets \\{ E \\}, E \\subset T^N, a number of propositions are proved showing that weak localization of rectangular sums holds on the set E in the classes L_p, p \\ge 1, if and only if the set E has certain specific properties. In the course of the proof the precise geometry and structure of the subset E_1 of E on which the multiple Fourier series converges almost everywhere to zero are determined. Bibliography: 13 titles.

  9. Impact of dislocation densities on n+/p and p+/n junction GaAs diodes and solar cells on SiGe virtual substrates

    NASA Astrophysics Data System (ADS)

    Andre, C. L.; Wilt, D. M.; Pitera, A. J.; Lee, M. L.; Fitzgerald, E. A.; Ringel, S. A.

    2005-07-01

    Recent experimental measurements have shown that in GaAs with elevated threading dislocation densities (TDDs) the electron lifetime is much lower than the hole lifetime [C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, and S. A. Ringel, Appl. Phys. Lett. 84, 3884 (2004)]. This lower electron lifetime suggests an increase in depletion region recombination and thus in the reverse saturation current (J0 for an n+/p diode compared with a p+/n diode at a given TDD. To confirm this, GaAs diodes of both polarities were grown on compositionally graded Ge /Si1-xGex/Si (SiGe) substrates with a TDD of 1×106cm-2. It is shown that the ratio of measured J0 values is consistent with the inverse ratio of the expected lifetimes. Using a TDD-dependent lifetime in solar cell current-voltage models we found that the Voc, for a given short-circuit current, also exhibits a poorer TDD tolerance for GaAs n+/p solar cells compared with GaAs p+/n solar cells. Experimentally, the open-circuit voltage (Voc) for the n+/p GaAs solar cell grown on a SiGe substrate with a TDD of ˜1×106cm-2 was ˜880mV which was significantly lower than the ˜980mV measured for a p+/n GaAs solar cell grown on SiGe at the same TDD and was consistent with the solar cell modeling results reported in this paper. We conclude that p+/n polarity GaAs junctions demonstrate superior dislocation tolerance than n+/p configured GaAs junctions, which is important for optimization of lattice-mismatched III-V devices.

  10. J / ψ production at low transverse momentum in p + p and d + Au collisions at s N N = 200 GeV

    DOE PAGES

    Adamczyk, L.

    2016-06-10

    Inmore » this paper, we report on the measurement of J/ψ production in the dielectron channel at midrapidity (|y| < 1) in p + p and d + Au collisions at s N N = 200 from the STAR experiment at the Relativistic Heavy Ion Collider. The transverse momentum p T spectra in p + p for p T < 4 GeV/c and d + Au collisions for p T < 3 GeV/c are presented. These measurements extend the STAR coverage for J/ψ production in p + p collisions to low p T . The < p$$2\\atop{T}$$ > from the measured J/ψ invariant cross section in p + p and d + Au collisions are evaluated and compared to similar measurements at other collision energies. The nuclear modification factor for J/ψ is extracted as a function of p T and collision centrality in d + Au and compared to model calculations using the modified nuclear parton distribution function and a final-state J/ψ nuclear absorption cross section.« less

  11. Measurements of charmonium production in p+p, p+Au, and Au+Au collisions at s NN = 200  GeV with the STAR experiment

    DOE PAGES

    Todoroki, Takahito

    2017-09-25

    Here, we present the first results from the STAR MTD of mid-rapidity charmonium measurements via the di-muon decay channel in p+p, p+Au, and Au+Au collisions at √S NN = 200 GeV at RHIC. The inclusive J/Ψ production cross section in p+p collisions can be described by the Non-Relativistic QCD (NRQCD) formalism coupled with the color glass condensate e ective theory (CGC) at low transverse momentum (p T) and next-to-leading order NRQCD at high p T. The nuclear modification factor in p+Au collisions for inclusive J/Ψ is below unity at low p T and consistent with unity at high p T,more » which can be described by calculations including both nuclear PDF and nuclear absorption e ects. The double ratio of inclusive J/Ψ and Ψ(2S) production rates for 0 < p T < 10 GeV/c at mid-rapidity between p+p and p+Au collisions is measured to be 1.37 0.42 0.19. The nuclear modification factor in Au+Au collisions for inclusive J/Ψ shows significant J/Ψ suppression at high p T in central collisions and can be qualitatively described by transport models including dissociation and regeneration contributions.« less

  12. Measurements of charmonium production in p+p, p+Au, and Au+Au collisions at s NN = 200  GeV with the STAR experiment

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Todoroki, Takahito

    Here, we present the first results from the STAR MTD of mid-rapidity charmonium measurements via the di-muon decay channel in p+p, p+Au, and Au+Au collisions at √S NN = 200 GeV at RHIC. The inclusive J/Ψ production cross section in p+p collisions can be described by the Non-Relativistic QCD (NRQCD) formalism coupled with the color glass condensate e ective theory (CGC) at low transverse momentum (p T) and next-to-leading order NRQCD at high p T. The nuclear modification factor in p+Au collisions for inclusive J/Ψ is below unity at low p T and consistent with unity at high p T,more » which can be described by calculations including both nuclear PDF and nuclear absorption e ects. The double ratio of inclusive J/Ψ and Ψ(2S) production rates for 0 < p T < 10 GeV/c at mid-rapidity between p+p and p+Au collisions is measured to be 1.37 0.42 0.19. The nuclear modification factor in Au+Au collisions for inclusive J/Ψ shows significant J/Ψ suppression at high p T in central collisions and can be qualitatively described by transport models including dissociation and regeneration contributions.« less

  13. Photo-induced intersubband absorption in {Si}/{SiGe} quantum wells

    NASA Astrophysics Data System (ADS)

    Boucaud, P.; Gao, L.; Visocekas, F.; Moussa, Z.; Lourtioz, J.-M.; Julien, F. H.; Sagnes, I.; Campidelli, Y.; Badoz, P.-A.; Vagos, P.

    1995-12-01

    We have investigated photo-induced intersubband absorption in the valence band of {Si}/{SiGe} quantum wells. Carriers are optically generated in the quantum wells using an argon ion laser. The resulting infrared absorption is probed with a step-scan Fourier transform infrared spectrometer. The photo-induced infrared absorption in SiGe quantum wells is dominated by two contributions: the free carrier absorption, which is similar to bulk absorption in a uniformly doped SiGe layer, and the valence subband absorption in the quantum wells. Both p- and s-polarized intersubband absorptions are measured. We have observed that the photo-induced intersubband absorption in doped samples is shifted to lower energy as compared to direct intersubband absorption. This absorption process is attributed to carriers away from the Brillouin zone center. We show that the photo-induced technique is appropriate to study valence band mixing effects and their influence on intersubband absorption.

  14. Visible and near-infrared Ge-H vibrational overtones in GeH/sub 4/

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bernheim, R.A.; Allbee, D.C.; Lampe, F.W.

    1988-04-07

    Absorption spectra in the 11,000-18,000-cm/sup -1/ range have been recorded for gaseous GeH/sub 4/ by intracavity photoacoustic detection with CW dye lasers. The observed transitions correspond to ..delta..v = 6-9 overtones of the Ge-H local mode stretch and show band contours arising from rotational structure at sample pressures of 1 atm. The local mode Ge-H stretch can be characterized by omega/sub e/ = 2178.3 +- 0.3 cm/sup -1/ and omega/sub e/chi/sub e/ = 33.7 +- 0.1 cm/sup -1/. In addition, the ..delta..v = 5-8 + v/sub 4/ combinations were observed. Evidence for chemical reaction induced by the ..delta..v = 9more » excitation is also found.« less

  15. A Broadband Infrared Laser Source (2.5-17 μm) for Plasma Diagnostics

    NASA Astrophysics Data System (ADS)

    Ionin, A. A.; Kinyaevskii, I. O.; Klimachev, Yu. M.; Kozlov, A. Yu.; Kotkov, A. A.

    2017-12-01

    This paper presents the results of studies aimed at the creation of a hybrid laser system which is composed of a gas lasers and a nonlinear crystal and appreciably broadens and enriches the radiation spectrum of these lasers. A highly efficient conversion (37%) is attained when generating the second harmonic in a ZnGeP2 crystal owing to an increase in the peak power of CO laser radiation in the mode locking regime. The two-cascade conversion (generation of both sum and difference frequencies) of radiation of a broadband CO laser in the single sample of such nonlinear crystals as ZnGeP2 and AgGaSe2 is demonstrated. In this case, the radiation spectrum is broadened by nearly a factor of two, and the number of detected spectral lines grows by a factor of four. The use of a comparatively simple laser system of gas-discharge CO and CO2 lasers to conversion in AgGaSe2 results in laser radiation tunable over a set of narrow spectral lines within a range from 2.5 to 16.6 μm (more than two and a half octaves).

  16. Amplitude analysis of elastic p-p scattering at 6 GeV/c at all t's

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ghahramany, N.; Goldstein, G.R.; Moravcsik, M.J.

    1983-09-01

    The extensive set of polarization data obtained at the Argonne Zero Gradient Synchro- p tron for elastic proton-proton scattering at 6 GeV/c at a full set of values of t is used to determine the five complex reaction amplitudes, using the optimal formalism. The determination is easiest in the transversity formalism, and from that the ''planar'' amplitudes (including the helicity amplitudes) are obtained. A complete determination is made at 20 different values of t, from -0.1 to -1.0 (GeV/c)/sup 2/, using data interpolated in t. In addition, a less complete set of data permits the determination of the five magnitudesmore » (but not of the four phases) in the range from t = -1.0 to t = -2.0 (GeV/c)/sup 2/. The magnitudes of the five amplitudes can be obtained without any ambiguity, but for the four relative phases several distinct solutions exist, one of which is selected on the basis of continuity in t and minimum chi/sup 2/. There continues to be evidence that in the planar system in which the orientation axes are 90/sup 0/ from the helicity axes, all amplitudes tend to be either pure real or pure imaginary.« less

  17. Composite nanostructures induced by water-confined femtosecond laser pulses irradiation on GaAs/Ge solar cell surface for anti-reflection

    NASA Astrophysics Data System (ADS)

    Li, Zhibao; Guan, Xiaoxiao; Hua, Yinqun; Hui, Shuangmou

    2018-10-01

    Composite nanostructures (CNs) composed of random nano-pores and nano-protrusions were fabricated on the surface of the GaAs/Ge solar cell by water-confined femtosecond laser processing. The result of the FESEM and AFM revealed that the size of the CNs is about 300-500 nm. In order to research the evolution of the CNs, a group of laser irradiation under different number of pulses from 50 to 400 was performed on the cell surface. In conclusion, the formation mechanism is concerned to the generation of microbubbles and the interaction between the laser-induced plasma and the nano-roughness. The CNs effectively promote the antireflection performance and suppress the surface reflectivity to 8.9% over the entire wavelength range (300-1200 nm).

  18. All-MOCVD-grown BH laser on P-InP substrates

    NASA Astrophysics Data System (ADS)

    Nishimura, Tadashi; Ishimura, E.; Nakajima, Yasuo; Tada, Hitoshi; Kimura, T.; Ohkura, Y.; Goto, Katsuhiko; Omura, Etsuji; Aiga, Masao

    1993-07-01

    A very low cw threshold current of 2.5 mA ( 25 degree(s)C) and 8.0 mA ( 80 degree(s)C) with high reliability has been realized in the all-MOCVD grown BH lasers on p-InP substrates. A strained MQW active layer of 1.3 micrometers wavelength and the precise carrier confinement buried structure by MOCVD is employed for the BH lasers. The excellent potential of long lifetime of the all-MOCVD grown laser has also been confirmed. After the high temperature and the high current (100 degree(s)C, 200 mA) aging test, no significant degradation is observed which is comparable with the well-established LPE grown lasers. The BH laser is also operating stably over 3700 hrs under the APC condition of 50 degree(s)C, 10 mW. Finally, an extremely uniform 10-element all-MOCVD grown LD array is demonstrated, which has the threshold current uniformity of 2.4 +/- 0.1 mA ( 25 degree(s)C) and 9.2 +/- 0.2 mA ( 80 degree(s)C). The growth mechanism in the MOCVD is also described.

  19. Self-organization in P_xGe_xSe_1-2x glasses^*

    NASA Astrophysics Data System (ADS)

    Chakravarty, Swapnajit; Georgiev, Daniel; Boolchand, Punit; Micoulaut, Matthieu

    2003-03-01

    Bulk glasses in the titled ternary, in the 0 < x < 0.26 composition range, are examined in MDSC and Raman scattering measurements. Both fresh and aged samples were studied. Bimodal endotherms are observed but only the high^T endotherm displays a reversing heat flow signal that represents a glass transition. The pre^_Tg endotherm is observed in quenched samples only, and represents an activation energy [1] associated with P4 units (Se^_P(Se_1/2)_3) converting to P3 (P(Se_1/2)_3) ones. T_g(x) accessed from the reversing heat flow are found to increase with x as a power^_law, displaying a cusp near x = 0.04. The non^_reversing enthalpy is found to display a global minimum in the 0.08 < x < 0.145 range identified with the self^_organized phase. Raman scattering reveals the isostatically rigid units ( P3 , P_4, CS and ES Ge(Se_1/2)_4) comprising building blocks of the self^_organized phase. These results are parallel to those encountered in the As^_Ge^_Se ternary [2,3]. ^*Supported by NSF grant DMR ^_01^_01808 1. D.G. Georgiev et al Phys. Rev. B 64,134204(2001) 2.Y. Wang et al Europhys. Lett. 52, 633 (2000) 3. T.Qu et al. companion abstract

  20. Target and beam-target spin asymmetries in exclusive pion electroproduction for Q2>1 GeV2. II. e p →e π0p

    NASA Astrophysics Data System (ADS)

    Bosted, P. E.; Kim, A.; Adhikari, K. P.; Adikaram, D.; Akbar, Z.; Amaryan, M. J.; Anefalos Pereira, S.; Avakian, H.; Badui, R. A.; Ball, J.; Balossino, I.; Battaglieri, M.; Bedlinskiy, I.; Biselli, A. S.; Boiarinov, S.; Briscoe, W. J.; Brooks, W. K.; Bültmann, S.; Burkert, V. D.; Cao, T.; Carman, D. S.; Celentano, A.; Chandavar, S.; Charles, G.; Chetry, T.; Ciullo, G.; Clark, L.; Colaneri, L.; Cole, P. L.; Contalbrigo, M.; Cortes, O.; Crede, V.; D'Angelo, A.; Dashyan, N.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fanchini, E.; Fedotov, G.; Fegan, S.; Fersch, R.; Filippi, A.; Fleming, J. A.; Forest, T. A.; Fradi, A.; Ghandilyan, Y.; Gilfoyle, G. P.; Girod, F. X.; Glazier, D. I.; Gohn, W.; Golovatch, E.; Gothe, R. W.; Griffioen, K. A.; Guidal, M.; Guler, N.; Hakobyan, H.; Guo, L.; Hafidi, K.; Hakobyan, H.; Hanretty, C.; Harrison, N.; Hattawy, M.; Heddle, D.; Hicks, K.; Hollis, G.; Holtrop, M.; Hughes, S. M.; Ireland, D. G.; Isupov, E. L.; Jenkins, D.; Jiang, H.; Jo, H. S.; Joo, K.; Keller, D.; Khachatryan, G.; Khandaker, M.; Kim, W.; Klei, A.; Klein, F. J.; Koirala, S.; Kubarovsky, V.; Kuhn, S. E.; Lanza, L.; Lenisa, P.; Livingston, K.; Lu, H. Y.; MacGregor, I. J. D.; Markov, N.; Mayer, M.; McCracken, M. E.; McKinnon, B.; Mineeva, T.; Mirazita, M.; Mokeev, V. I.; Montgomery, R. A.; Movsisyan, A.; Munoz Camacho, C.; Murdoch, G.; Nadel-Turonski, P.; Ni, A.; Niccolai, S.; Niculescu, G.; Osipenko, M.; Ostrovidov, A. I.; Paolone, M.; Paremuzyan, R.; Park, K.; Pasyuk, E.; Phelps, W.; Pisano, S.; Pogorelko, O.; Price, J. W.; Prok, Y.; Protopopescu, D.; Puckett, A. J. R.; Raue, B. A.; Ripani, M.; Rizzo, A.; Rosner, G.; Rossi, P.; Roy, P.; Sabatié, F.; Saini, M. S.; Schumacher, R. A.; Seder, E.; Sharabian, Y. G.; Skorodumina, Iu.; Smith, G. D.; Sokhan, D.; Sparveris, N.; Stankovic, I.; Stepanyan, S.; Stoler, P.; Strakovsky, I. I.; Strauch, S.; Taiuti, M.; Tian, Ye; Torayev, B.; Ungaro, M.; Voskanyan, H.; Voutier, E.; Walford, N. K.; Watts, D. P.; Wei, X.; Weinstein, L. B.; Zachariou, N.; Zhang, J.; Zhao, Z. W.; Zonta, I.; CLAS Collaboration

    2017-03-01

    Beam-target double-spin asymmetries and target single-spin asymmetries were measured for the exclusive π0 electroproduction reaction γ*pp π0 , expanding an analysis of the γ*p →n π+ reaction from the same experiment. The results were obtained from scattering of 6-GeV longitudinally polarized electrons off longitudinally polarized protons using the CEBAF Large Acceptance Spectrometer at Jefferson Laboratory. The kinematic ranges covered are 1.1 GeV and 1 GeV2. Results were obtained for about 5700 bins in W , Q2, cos(θ*) , and ϕ*. The beam-target asymmetries were found to generally be greater than zero, with relatively modest ϕ* dependence. The target asymmetries exhibit very strong ϕ* dependence, with a change in sign occurring between results at low W and high W , in contrast to π+ electroproduction. Reasonable agreement is found with phenomenological fits to previous data for W <1.6 GeV, but significant differences are seen at higher W . When combined with cross-sectional measurements, as well as π+ observables, the present results will provide powerful constraints on nucleon resonance amplitudes at moderate and large values of Q2, for resonances with masses as high as 2.4 GeV.

  1. Fabrication of single crystalline stripe in Si and Ge film on rolled flexible glass substrate by UV cw micro-chevron laser beam

    NASA Astrophysics Data System (ADS)

    Yeh, Wenchang

    2017-08-01

    Micro chevron laser beam annealing (μCLBA) of Si film and Ge film were introduced. Single crystal stripe with a dimension of several tens to hundreds μm in length and 3-8μm in width was formed in Si film or Ge film by scanning μCLBA over the film. Main boundaries in the c-Si stripe were Σ3 CSL twin boundary. Scanning speed of micro linear laser beam annealing (μLLBA) was varied from 0.05 m/s to 8m/s to investigate its influence to crystallinity. Even at 8m/s lateral growth taken place, however, crystal quality was better for slower lateral growth. Crystallization area per energy (APE) of μLLBA was evaluated and compared with other methods. It was found APE of μLLBA was larger than other method, especially for a display with low fill factor of TFT, APE can be several orders of magnitude larger.

  2. Cross section and transverse single-spin asymmetry of eta mesons in p ↑ plus p collisions at √s=200 GeV at forward rapidity

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adare, A.; Aidala, C.; Ajitanand, N.  N.

    2014-10-01

    We present a measurement of the cross section and transverse single-spin asymmetry (A N) for η mesons at large pseudorapidity from √s=200 GeV p ↑+p collisions. The measured cross section for 0.5T<5.0 GeV/c and 3.0<|η|<3.8 is well described by a next-to-leading-order perturbative-quantum-chromodynamics calculation. The asymmetries A N have been measured as a function of Feynman-x (x F) from 0.2<|x F|<0.7, as well as transverse momentum (p T) from 1.0T<4.5 GeV/c. The asymmetry averaged over positive x F is (A N) = 0.061±0.014. The results are consistent with prior transverse single-spin measurements of forward η and π⁰ mesons at various energiesmore » in overlapping x F ranges. Comparison of different particle species can help to determine the origin of the large observed asymmetries in p ↑+p collisions.« less

  3. Carbon Chains Containing Group IV Elements: Rotational Detection of GeC_4 and GeC_5

    NASA Astrophysics Data System (ADS)

    McCarthy, Michael C.; Martin-Drumel, Marie-Aline; Thorwirth, Sven

    2017-06-01

    Following the recent discovery of T-shaped GeC_2 by chirped-pulse FT microwave spectroscopy, evidence has been found for two longer carbon chains, GeC_4 and GeC_5, guided by high-level quantum chemical calculations of their molecular structure. Like their isovalent Si-bearing counterparts, those with an even number of carbon atoms are predicted to possess ^1Σ ground states, while odd-numbered carbon chains have low-lying ^3Σ linear isomers; all are predicted to be highly polar. With the exception of ^{73}Ge, rotational lines of the other four Ge isotopic species have been observed between 6 and 18 GHz. From these measurements, the Ge-C bond length has been determined to high precision, and can be compared to that found in other Ge species, such as GeC [1] and GeC_3Ge [2] studied previously at rotational resolution. Somewhat surprisingly, the spectrum of GeC_5 very closely resembles that of ^1Σ molecule, presumably owing to the very large spin-orbit constant of atomic Ge, which is manifest as an equally large spin-spin constant in the chain. A comparison between the production of SiC_n and GeC_n chains by laser ablation, including the absence of those with n=3, will be given. [1] C. R. Brazier and J. I. Ruiz, J. Mol. Spectrosc., 270, 26-32 (2011). [2] S. Thorwirth et al., J. Phys. Chem. A, 120, 254-259 (2016).

  4. Shipboard Measurements of 0.6328 Micrometer Laser Beam Extinction in the Marine Boundary Layer

    DTIC Science & Technology

    1976-06-01

    hdl.handle.net/10945/17938 Downloaded from NPS Archive: Calhoun SHIPBOARD MEASUREMENTS OF 0.6328 MICROMETER LASER BEAM EXTINCTION IN THE MARINE BOUNDARY LAYER P...W. Parish NAVAL POSTGRADUATE SCHOOL Monterey, California THESIS SHIPBOARD MEASUREMENTS OF 0.6328 MICROMETER LASER BEAM EXTINCTION IN THE MARINE...CLASSIFICATION OF THIS PtkGE(Wh»n Dmta Enffd) Shipboard Measurements of 0.6328 Micrometer Laser Beam Extinction in the Marine Boundary Layer by P. W

  5. Amorphization dynamics of Ge{sub 2}Sb{sub 2}Te{sub 5} films upon nano- and femtosecond laser pulse irradiation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Siegel, J.; Gawelda, W.; Puerto, D.

    2008-01-15

    Phase transformations of crystalline Ge{sub 2}Sb{sub 2}Te{sub 5} films upon pulsed laser irradiation have been studied using in situ reflectivity measurements with temporal resolution. Two different configurations allowed point probing with nanosecond temporal resolution and imaging with subpicosecond temporal and micrometer spatial resolution. The role of the pulse duration and laser fluence on the dynamics of the phase change and the degree of amorphization is discussed. Several advantageous features of femtosecond compared to nanosecond laser-induced amorphization are identified. Moreover, a high-resolution study of the amorphization dynamics reveals the onset of amorphization at moderate fluences to occur within {approx}100 ps aftermore » arrival of the laser pulse. At high fluences, amorphization occurs after {approx}430 ps and the molten phase is characterized by an anomalously low reflectivity value, indicative of a state of extreme supercooling.« less

  6. Nuclear Modification of Neutral Pion Production at Low x in √s=200 GeV d+Au and p+p Collisions

    NASA Astrophysics Data System (ADS)

    Sedgwick, Kenneth Blair

    2 translate to measurements at, respectively, high rapidity eta and high transverse momentum p⊥. The high rapidity 3.1 < eta < 3.9 Muon Piston Calorimeter (MPC) detector at PHENIX is ideally suited for measurements of neutral pion R d+Au probing regions of low x. At √s = 200 GeV, a combinatoric analysis of neutral pion decay products in the MPC can obtain measurements of Rd+Au up to a transverse momentum of p⊥ = 2 GeV/c. However, at p ⊥ greater than 2 GeV/c, photons from neutral pion decay have insufficient spatial separation to be independently resolved in the detector. In this analysis the transverse momentum range of the detector, measuring R d+Au at √s = 200 GeV, is extended to p⊥ = 3.5 GeV/c by studying photon pairs from neutral pions that resolve in the MPC as a single cluster. Increased suppression is reproduced at low p⊥, in agreement with previous data. For p⊥ > 2 GeV/c Cronin enhancement is not observed, as anticipated by the CGC framework. However, the data can not rule out the possibility that the observed suppression is the result of extreme nuclear shadowing. Also presented are invariant neutral pion yields for p+p and d+Au collisions and the invariant neutral pion cross section for p+p collisions at √s = 200 GeV.

  7. InP/InGaP quantum-dot SESAM mode-locked Alexandrite laser

    NASA Astrophysics Data System (ADS)

    Ghanbari, Shirin; Fedorova, Ksenia A.; Krysa, Andrey B.; Rafailov, Edik U.; Major, Arkady

    2018-02-01

    A semiconductor saturable absorber mirror (SESAM) passively mode-locked Alexandrite laser was demonstrated. Using an InP/InGaP quantum-dot saturable absorber mirror, pulse duration of 420 fs at 774 nm was obtained. The laser was pumped at 532 nm and generated 325 mW of average output power in mode-locked regime with a pump power of 7.12 W. To the best of our knowledge, this is the first report of a passively mode-locked Alexandrite laser using SESAM in general and quantum-dot SESAM in particular.

  8. Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform

    NASA Astrophysics Data System (ADS)

    Mączko, H. S.; Kudrawiec, R.; Gladysiewicz, M.

    2016-09-01

    It is shown that compressively strained Ge1-xSnx/Ge quantum wells (QWs) grown on a Ge substrate with 0.1 ≤ x ≤ 0.2 and width of 8 nm ≤ d ≤ 14 nm are a very promising gain medium for lasers integrated with an Si platform. Such QWs are type-I QWs with a direct bandgap and positive transverse electric mode of material gain, i.e. the modal gain. The electronic band structure near the center of Brillouin zone has been calculated for various Ge1-xSnx/Ge QWs with use of the 8-band kp Hamiltonian. To calculate the material gain for these QWs, occupation of the L valley in Ge barriers has been taken into account. It is clearly shown that this occupation has a lot of influence on the material gain in the QWs with low Sn concentrations (Sn < 15%) and is less important for QWs with larger Sn concentration (Sn > 15%). However, for QWs with Sn > 20% the critical thickness of a GeSn layer deposited on a Ge substrate starts to play an important role. Reduction in the QW width shifts up the ground electron subband in the QW and increases occupation of the L valley in the barriers instead of the Γ valley in the QW region.

  9. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to −190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from −20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperaturesmore » has been studied including EL technique.« less

  10. Zuverlässigkeit digitaler Schaltungen unter Einfluss von intrinsischem Rauschen

    NASA Astrophysics Data System (ADS)

    Kleeberger, V. B.; Schlichtmann, U.

    2011-08-01

    Die kontinuierlich fortschreitende Miniaturisierung in integrierten Schaltungen führt zu einem Anstieg des intrinsischen Rauschens. Um den Einfluss von intrinsischem Rauschen auf die Zuverlässigkeit zukünftiger digitaler Schaltungen analysieren zu können, werden Methoden benötigt, die auf CAD-Verfahren wie Analogsimulation statt auf abschätzenden Berechnungen beruhen. Dieser Beitrag stellt eine neue Methode vor, die den Einfluss von intrinsischem Rauschen in digitalen Schaltungen für eine gegebene Prozesstechnologie analysieren kann. Die Amplituden von thermischen, 1/f und Schrotrauschen werden mit Hilfe eines SPICE Simulators bestimmt. Anschließend wird der Einfluss des Rauschens auf die Schaltungszuverlässigkeit durch Simulation analysiert. Zusätzlich zur Analyse werden Möglichkeiten aufgezeigt, wie die durch Rauschen hervorgerufenen Effekte im Schaltungsentwurf mit berücksichtigt werden können. Im Gegensatz zum Stand der Technik kann die vorgestellte Methode auf beliebige Logikimplementierungen und Prozesstechnologien angewendet werden. Zusätzlich wird gezeigt, dass bisherige Ansätze den Einfluss von Rauschen bis um das Vierfache überschätzen.

  11. Transient thermoelectric effect with tunable pulsed laser: Experiment and computer simulations for p-GaAs

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sasaki, M.; Ueda, T.; Tanioka, M.

    A photoinduced {open_quotes}transient thermoelectric effect{close_quotes} (TTE) has been measured for a p-GaAs crystal using a tunable pulsed laser, over the laser energy range 0.93{endash}1.80 eV, laser intensity 0.2{endash}130mJ/cm{sup 2}, time range 1 ns{endash}1 ms, and temperature range 4.2{endash}50 K, with special attention to native defects of EL2 centers, whose ground state (EL2{sup 0}) and excited state (EL2{sup ex}) are located, respectively, at 0.76 and 1.80 eV above the top of the valence band (their energy difference {sigma}{sup ex}=1.04eV). After laser irradiation at one end of the sample, a TTE voltage is induced within a rising time {tau}{sub r} (1.0{endash}1.5 {mu}s)more » due to hole diffusion, followed by exponential decay with multiple decay times {tau}{sub 1}{endash}{tau}{sub 5} that depend on the laser energy, its intensity, and the temperature. The decay time {tau}{sub 1} is assigned to relate to photoexcited electron diffusion in the conduction band and others {tau}{sub 2}{endash}{tau}{sub 5} with electron recombinations with photogenerated holes in the valence band via EL2 centers in p-GaAs, for which a rough evaluation of the capture cross section is made. Based on the experimental data, we have discussed the photoinduced carrier generation/recombination processes in three laser energy ranges with the two boundaries {sigma}{sup ex} and the band-gap energy E{sub g} (=1.50 eV); regions I (E{lt}{sigma}{sup ex}), II ({sigma}{sup ex}{le}E{lt}E{sub g}), and III (E{ge}E{sub g}). For these three energy regions, we have carried out computer simulations for the photoinduced TTE voltage profiles by solving one-dimensional transport equations for photogenerated electrons and holes, in qualitative agreement with the observations. {copyright} {ital 1997 American Institute of Physics.}« less

  12. Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gallacher, K.; Millar, R. W.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk

    2016-02-29

    Mid-infrared intersubband absorption from p-Ge quantum wells with Si{sub 0.5}Ge{sub 0.5} barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm.

  13. Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p + n Diodes

    NASA Astrophysics Data System (ADS)

    Sammak, Amir; Qi, Lin; Nanver, Lis K.

    2015-12-01

    The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p + n photodiodes with an oxide-covered light entrance window. Contacting is achieved at the perimeter of the Ge-island anode directly to an Al interconnect metallization. The Ge is grown in oxide windows to the Si wafer and covered by a B and gallium (Ga) layer stack (PureGaB) composed of about a nanometer of Ga for forming the p + Ge region and 10 nm of B as an interdiffusion barrier to the Al. To form contact windows, the side-wall oxide is etched away, exposing a small tip of the Ge perimeter to Al that from this point travels about 5 μm into the bulk Ge crystal. In this process, Ge and Si materials are displaced, forming Ge-filled V-grooves at the Si surface. The Al coalesces in grains. This process is studied here by high-resolution cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy that confirm the purities of the Ge and Al grains. Diodes are fabricated with different geometries and statistical current-voltage characterization reveals a spread that can be related to across-the-wafer variations in the contact processing. The I- V behavior is characterized by low dark current, low contact resistance, and breakdown voltages that are suitable for operation in avalanching modes. The restricted access to the Ge of the Al inducing the Ge and Si material transport does not destroy the very good electrical characteristics typical of PureGaB Ge-on-Si diodes.

  14. Van der Waals forces in pNRQED

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Shtabovenko, Vladyslav

    2016-01-22

    We report on the calculation of electromagnetic van der Waals forces [1] between two hydrogen atoms using non-relativistic effective field theories (EFTs) of QED for large and small momentum transfers with respect to the intrinsic energy scale of the hydrogen atom. Our results reproduce the well known London and Casimir-Polder forces.

  15. Facile Synthesis of Layer Structured GeP3/C with Stable Chemical Bonding for Enhanced Lithium-Ion Storage

    NASA Astrophysics Data System (ADS)

    Qi, Wen; Zhao, Haihua; Wu, Ying; Zeng, Hong; Tao, Tao; Chen, Chao; Kuang, Chunjiang; Zhou, Shaoxiong; Huang, Yunhui

    2017-02-01

    Recently, metal phosphides have been investigated as potential anode materials because of higher specific capacity compared with those of carbonaceous materials. However, the rapid capacity fade upon cycling leads to poor durability and short cycle life, which cannot meet the need of lithium-ion batteries with high energy density. Herein, we report a layer-structured GeP3/C nanocomposite anode material with high performance prepared by a facial and large-scale ball milling method via in-situ mechanical reaction. The P-O-C bonds are formed in the composite, leading to close contact between GeP3 and carbon. As a result, the GeP3/C anode displays excellent lithium storage performance with a high reversible capacity up to 1109 mA h g-1 after 130 cycles at a current density of 0.1 A g-1. Even at high current densities of 2 and 5 A g-1, the reversible capacities are still as high as 590 and 425 mA h g-1, respectively. This suggests that the GeP3/C composite is promising to achieve high-energy lithium-ion batteries and the mechanical milling is an efficient method to fabricate such composite electrode materials especially for large-scale application.

  16. Dual-Gated MoTe2/MoS2 van der Waals Heterojunction p-n Diode

    NASA Astrophysics Data System (ADS)

    Rai, Amritesh; Movva, Hema C. P.; Kang, Sangwoo; Larentis, Stefano; Roy, Anupam; Tutuc, Emanuel; Banerjee, Sanjay K.

    2D materials are promising for future electronic and optoelectronic applications. In this regard, it is important to realize p-n diodes, the most fundamental building block of all modern semiconductor devices, based on these 2D materials. While it is challenging to achieve homojunction diodes in 2D semiconductors due to lack of reliable selective doping techniques, it is relatively easier to achieve diode-like behavior in van der Waals (vdW) heterostructures comprising different 2D semiconductors. Here, we demonstrate dual-gated vdW heterojunction p-n diodes based on p-type MoTe2 and n-type MoS2, with hBN as the top and bottom gate dielectric. The heterostructure stack is assembled using a polymer-based `dry-transfer' technique. Pt contact is used for hole injection in MoTe2, whereas Ag is used for electron injection in MoS2. The dual-gates allow for independent electrostatic tuning of the carriers in MoTe2 and MoS2. Room temperature interlayer current-voltage characteristics reveal a strong gate-tunable rectification behavior. At low temperatures, the diode turn-on voltage increases, whereas the reverse saturation current decreases, in accordance with conventional p-n diode behavior. Dual-Gated MoTe2/MoS2 van der Waals Heterojunction p-n Diode.

  17. Strange baryon resonance production in sqrt s NN=200 GeV p+p and Au+Au collisions.

    PubMed

    Abelev, B I; Aggarwal, M M; Ahammed, Z; Amonett, J; Anderson, B D; Anderson, M; Arkhipkin, D; Averichev, G S; Bai, Y; Balewski, J; Barannikova, O; Barnby, L S; Baudot, J; Bekele, S; Belaga, V V; Bellingeri-Laurikainen, A; Bellwied, R; Benedosso, F; Bhardwaj, S; Bhasin, A; Bhati, A K; Bichsel, H; Bielcik, J; Bielcikova, J; Bland, L C; Blyth, S-L; Bonner, B E; Botje, M; Bouchet, J; Brandin, A V; Bravar, A; Burton, T P; Bystersky, M; Cadman, R V; Cai, X Z; Caines, H; Calderón de la Barca Sánchez, M; Castillo, J; Catu, O; Cebra, D; Chajecki, Z; Chaloupka, P; Chattopadhyay, S; Chen, H F; Chen, J H; Cheng, J; Cherney, M; Chikanian, A; Christie, W; Coffin, J P; Cormier, T M; Cosentino, M R; Cramer, J G; Crawford, H J; Das, D; Das, S; Dash, S; Daugherity, M; de Moura, M M; Dedovich, T G; DePhillips, M; Derevschikov, A A; Didenko, L; Dietel, T; Djawotho, P; Dogra, S M; Dong, W J; Dong, X; Draper, J E; Du, F; Dunin, V B; Dunlop, J C; Dutta Mazumdar, M R; Eckardt, V; Edwards, W R; Efimov, L G; Emelianov, V; Engelage, J; Eppley, G; Erazmus, B; Estienne, M; Fachini, P; Fatemi, R; Fedorisin, J; Filimonov, K; Filip, P; Finch, E; Fine, V; Fisyak, Y; Fu, J; Gagliardi, C A; Gaillard, L; Ganti, M S; Gaudichet, L; Ghazikhanian, V; Ghosh, P; Gonzalez, J E; Gorbunov, Y G; Gos, H; Grebenyuk, O; Grosnick, D; Guertin, S M; Guimaraes, K S F F; Gupta, N; Gutierrez, T D; Haag, B; Hallman, T J; Hamed, A; Harris, J W; He, W; Heinz, M; Henry, T W; Hepplemann, S; Hippolyte, B; Hirsch, A; Hjort, E; Hoffman, A M; Hoffmann, G W; Horner, M J; Huang, H Z; Huang, S L; Hughes, E W; Humanic, T J; Igo, G; Jacobs, P; Jacobs, W W; Jakl, P; Jia, F; Jiang, H; Jones, P G; Judd, E G; Kabana, S; Kang, K; Kapitan, J; Kaplan, M; Keane, D; Kechechyan, A; Khodyrev, V Yu; Kim, B C; Kiryluk, J; Kisiel, A; Kislov, E M; Klein, S R; Kocoloski, A; Koetke, D D; Kollegger, T; Kopytine, M; Kotchenda, L; Kouchpil, V; Kowalik, K L; Kramer, M; Kravtsov, P; Kravtsov, V I; Krueger, K; Kuhn, C; Kulikov, A I; Kumar, A; Kuznetsov, A A; Lamont, M A C; Landgraf, J M; Lange, S; LaPointe, S; Laue, F; Lauret, J; Lebedev, A; Lednicky, R; Lee, C-H; Lehocka, S; LeVine, M J; Li, C; Li, Q; Li, Y; Lin, G; Lin, X; Lindenbaum, S J; Lisa, M A; Liu, F; Liu, H; Liu, J; Liu, L; Liu, Z; Ljubicic, T; Llope, W J; Long, H; Longacre, R S; Love, W A; Lu, Y; Ludlam, T; Lynn, D; Ma, G L; Ma, J G; Ma, Y G; Magestro, D; Mahapatra, D P; Majka, R; Mangotra, L K; Manweiler, R; Margetis, S; Markert, C; Martin, L; Matis, H S; Matulenko, Yu A; McClain, C J; McShane, T S; Melnick, Yu; Meschanin, A; Millane, J; Miller, M L; Minaev, N G; Mioduszewski, S; Mironov, C; Mischke, A; Mishra, D K; Mitchell, J; Mohanty, B; Molnar, L; Moore, C F; Morozov, D A; Munhoz, M G; Nandi, B K; Nattrass, C; Nayak, T K; Nelson, J M; Netrakanti, P K; Nogach, L V; Nurushev, S B; Odyniec, G; Ogawa, A; Okorokov, V; Oldenburg, M; Olson, D; Pachr, M; Pal, S K; Panebratsev, Y; Panitkin, S Y; Pavlinov, A I; Pawlak, T; Peitzmann, T; Perevoztchikov, V; Perkins, C; Peryt, W; Phatak, S C; Picha, R; Planinic, M; Pluta, J; Poljak, N; Porile, N; Porter, J; Poskanzer, A M; Potekhin, M; Potrebenikova, E; Potukuchi, B V K S; Prindle, D; Pruneau, C; Putschke, J; Rakness, G; Raniwala, R; Raniwala, S; Ray, R L; Razin, S V; Reinnarth, J; Relyea, D; Retiere, F; Ridiger, A; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Rose, A; Roy, C; Ruan, L; Russcher, M J; Sahoo, R; Sakuma, T; Salur, S; Sandweiss, J; Sarsour, M; Sazhin, P S; Schambach, J; Scharenberg, R P; Schmitz, N; Schweda, K; Seger, J; Selyuzhenkov, I; Seyboth, P; Shabetai, A; Shahaliev, E; Shao, M; Sharma, M; Shen, W Q; Shimanskiy, S S; Sichtermann, E; Simon, F; Singaraju, R N; Smirnov, N; Snellings, R; Sood, G; Sorensen, P; Sowinski, J; Speltz, J; Spinka, H M; Srivastava, B; Stadnik, A; Stanislaus, T D S; Stock, R; Stolpovsky, A; Strikhanov, M; Stringfellow, B; Suaide, A A P; Sugarbaker, E; Sumbera, M; Sun, Z; Surrow, B; Swanger, M; Symons, T J M; Szanto de Toledo, A; Tai, A; Takahashi, J; Tang, A H; Tarnowsky, T; Thein, D; Thomas, J H; Timmins, A R; Timoshenko, S; Tokarev, M; Trainor, T A; Trentalange, S; Tribble, R E; Tsai, O D; Ulery, J; Ullrich, T; Underwood, D G; Buren, G Van; van der Kolk, N; van Leeuwen, M; Molen, A M Vander; Varma, R; Vasilevski, I M; Vasiliev, A N; Vernet, R; Vigdor, S E; Viyogi, Y P; Vokal, S; Voloshin, S A; Waggoner, W T; Wang, F; Wang, G; Wang, J S; Wang, X L; Wang, Y; Watson, J W; Webb, J C; Westfall, G D; Wetzler, A; Whitten, C; Wieman, H; Wissink, S W; Witt, R; Wood, J; Wu, J; Xu, N; Xu, Q H; Xu, Z; Yepes, P; Yoo, I-K; Yurevich, V I; Zhan, W; Zhang, H; Zhang, W M; Zhang, Y; Zhang, Z P; Zhao, Y; Zhong, C; Zoulkarneev, R; Zoulkarneeva, Y; Zubarev, A N; Zuo, J X

    2006-09-29

    We report the measurements of Sigma(1385) and Lambda(1520) production in p+p and Au+Au collisions at sqrt[s{NN}]=200 GeV from the STAR Collaboration. The yields and the p(T) spectra are presented and discussed in terms of chemical and thermal freeze-out conditions and compared to model predictions. Thermal and microscopic models do not adequately describe the yields of all the resonances produced in central Au+Au collisions. Our results indicate that there may be a time span between chemical and thermal freeze-out during which elastic hadronic interactions occur.

  18. Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

    NASA Astrophysics Data System (ADS)

    Al-Saigh, Reem; Baira, Mourad; Salem, Bassem; Ilahi, Bouraoui

    2018-06-01

    Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been numerically investigated aiming to study their potentiality towards direct bandgap emission in the mid-IR range. The use of GeSiSn alloy as surrounding media for GeSn quantum dots (QD) allows adjusting the strain around the QD through the variation of Si and/or Sn composition. Accordingly, the lattice mismatch between the GeSn quantum dots and the GeSiSn surrounding layer has been tuned between - 2.3 and - 4.5% through the variation of the Sn barrier composition for different dome-shaped QD sizes. The obtained results show that the emission wavelength, fulfilling the specific QD directness criteria, can be successively tuned over a broad mid-IR range from 3 up to7 μm opening new perspectives for group IV laser sources fully integrated in Si photonic systems for sensing applications.

  19. Van der Waals heterojunction diode composed of WS2 flake placed on p-type Si substrate

    NASA Astrophysics Data System (ADS)

    Aftab, Sikandar; Farooq Khan, M.; Min, Kyung-Ah; Nazir, Ghazanfar; Afzal, Amir Muhammad; Dastgeer, Ghulam; Akhtar, Imtisal; Seo, Yongho; Hong, Suklyun; Eom, Jonghwa

    2018-01-01

    P-N junctions represent the fundamental building blocks of most semiconductors for optoelectronic functions. This work demonstrates a technique for forming a WS2/Si van der Waals junction based on mechanical exfoliation. Multilayered WS2 nanoflakes were exfoliated on the surface of bulk p-type Si substrates using a polydimethylsiloxane stamp. We found that the fabricated WS2/Si p-n junctions exhibited rectifying characteristics. We studied the effect of annealing processes on the performance of the WS2/Si van der Waals p-n junction and demonstrated that annealing improved its electrical characteristics. However, devices with vacuum annealing have an enhanced forward-bias current compared to those annealed in a gaseous environment. We also studied the top-gate-tunable rectification characteristics across the p-n junction interface in experiments as well as density functional theory calculations. Under various temperatures, Zener breakdown occurred at low reverse-bias voltages, and its breakdown voltage exhibited a negative coefficient of temperature. Another breakdown voltage was observed, which increased with temperature, suggesting a positive coefficient of temperature. Therefore, such a breakdown can be assigned to avalanche breakdown. This work demonstrates a promising application of two-dimensional materials placed directly on conventional bulk Si substrates.

  20. Strain engineering of van der Waals heterostructures.

    PubMed

    Vermeulen, Paul A; Mulder, Jefta; Momand, Jamo; Kooi, Bart J

    2018-01-18

    Modifying the strain state of solids allows control over a plethora of functional properties. The weak interlayer bonding in van der Waals (vdWaals) materials such as graphene, hBN, MoS 2 , and Bi 2 Te 3 might seem to exclude strain engineering, since strain would immediately relax at the vdWaals interfaces. Here we present direct observations of the contrary by showing growth of vdWaals heterostructures with persistent in-plane strains up to 5% and we show that strain relaxation follows a not yet reported process distinctly different from strain relaxation in three-dimensionally bonded (3D) materials. For this, 2D bonded Bi 2 Te 3 -Sb 2 Te 3 and 2D/3D bonded Bi 2 Te 3 -GeTe multilayered films are grown using Pulsed Laser Deposition (PLD) and their structure is monitored in situ using Reflective High Energy Electron Diffraction (RHEED) and post situ analysis is performed using Transmission Electron Microscopy (TEM). Strain relaxation is modeled and found to solely depend on the layer being grown and its initial strain. This insight demonstrates that strain engineering of 2D bonded heterostructures obeys different rules than hold for epitaxial 3D materials and opens the door to precise tuning of the strain state of the individual layers to optimize functional performance of vdWaals heterostructures.

  1. Measurements of electrons from semi-leptonic heavy flavor decays in p+p and Au+Au collisions at √{sNN } = 200 GeV at STAR

    NASA Astrophysics Data System (ADS)

    Wang, Yaping; STAR Collaboration

    2017-08-01

    In these proceedings, we present recent results on electrons from semi-leptonic decays of open heavy-flavor hadrons (eHF) with the STAR detector at the Relativistic Heavy Ion Collider. We report the updated measurements of eHF production in p+p collisions at √{ s } = 200 GeV with significantly improved precision and wider kinematic coverage than previous measurements. With this new p+p reference, we obtain the nuclear modification factor (RAA) for eHF in Au+Au collisions at √{sNN } = 200 GeV using 2010 data. The RAA shows significant suppression at high pT in most central Au+Au collisions, while the suppression reduces gradually towards more peripheral collisions. We compare eHFRAA in central Au+Au collisions to that in central U+U collisions at √{sNN } = 193 GeV and find that they are consistent within uncertainties. We also show the results of B-hadron contribution to eHF extracted from azimuthal correlations between eHF and charged hadrons in p+p collisions. Finally we report the measurements of eHF from open bottom hadron decays and discuss the prospect of measuring eHF from open bottom and charm hadron decays separately utilizing the Heavy Flavor Tracker in Au+Au collisions.

  2. Observation of a New JPC = 1-+ Exotic State in the Reaction π-p --> π+π-π-p at 18 GeV/c

    NASA Astrophysics Data System (ADS)

    Adams, G. S.; Adams, T.; Bar-Yam, Z.; Bishop, J. M.; Bodyagin, V. A.; Brabson, B. B.; Brown, D. S.; Cason, N. M.; Chung, S. U.; Crittenden, R. R.; Cummings, J. P.; Danyo, K.; Denisov, S.; Dorofeev, V.; Dowd, J. P.; Dzierba, A. R.; Eugenio, P.; Gunter, J.; Hackenburg, R. W.; Hayek, M.; Ivanov, E. I.; Kachaev, I.; Kern, W.; King, E.; Kodolova, O. L.; Korotkikh, V. L.; Kostin, M. A.; Kuhn, J.; Lindenbusch, R.; Lipaev, V.; Losecco, J. M.; Manak, J. J.; Napolitano, J.; Nozar, M.; Olchanski, C.; Ostrovidov, A. I.; Pedlar, T. K.; Popov, A.; Rust, D. R.; Ryabchikov, D.; Sanjari, A. H.; Sarycheva, L. I.; Scott, E.; Seth, K. K.; Shenhav, N.; Shephard, W. D.; Sinev, N. B.; Smith, J. A.; Smith, P. T.; Stienike, D. L.; Sulanke, T.; Taegar, S. A.; Teige, S.; Thompson, D. R.; Vardanyan, I. N.; Weygand, D. P.; White, D.; Willutzki, H. J.; Wise, J.; Witkowski, M.; Yershov, A. A.; Zhao, D.

    1998-12-01

    A partial-wave analysis of the reaction π-p-->π+π-π-p at 18 GeV/c has been performed on a data sample of 250 000 events obtained by Brookhaven experiment E852. The expected JPC = 1++a1\\(1260\\), 2++a2\\(1320\\), and 2-+π2\\(1670\\) resonant states are clearly observed. The exotic JPC = 1-+ wave produced in the natural parity exchange processes shows distinct resonancelike phase motion at about 1.6 GeV/c2 in the ρπ channel. A mass-dependent fit results in a resonance mass of 1593+/-8+29-47 MeV/c2 and a width of 168+/-20+150-12 MeV/c2.

  3. Measurements of Multiparticle Correlations in d +Au Collisions at 200, 62.4, 39, and 19.6 GeV and p +Au Collisions at 200 GeV and Implications for Collective Behavior

    NASA Astrophysics Data System (ADS)

    Aidala, C.; Akiba, Y.; Alfred, M.; Andrieux, V.; Aoki, K.; Apadula, N.; Asano, H.; Ayuso, C.; Azmoun, B.; Babintsev, V.; Bagoly, A.; Bandara, N. S.; Barish, K. N.; Bathe, S.; Bazilevsky, A.; Beaumier, M.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Blau, D. S.; Boer, M.; Bok, J. S.; Brooks, M. L.; Bryslawskyj, J.; Bumazhnov, V.; Butler, C.; Campbell, S.; Canoa Roman, V.; Cervantes, R.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Citron, Z.; Connors, M.; Cronin, N.; Csanád, M.; Csörgő, T.; Danley, T. W.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Dion, A.; Dixit, D.; Do, J. H.; Drees, A.; Drees, K. A.; Dumancic, M.; Durham, J. M.; Durum, A.; Elder, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukuda, Y.; Gal, C.; Gallus, P.; Garg, P.; Ge, H.; Giordano, F.; Goto, Y.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gunji, T.; Guragain, H.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamilton, H. F.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haseler, T. O. S.; He, X.; Hemmick, T. K.; Hill, J. C.; Hill, K.; Hodges, A.; Hollis, R. S.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Imai, K.; Imrek, J.; Inaba, M.; Iordanova, A.; Isenhower, D.; Ito, Y.; Ivanishchev, D.; Jacak, B. V.; Jezghani, M.; Ji, Z.; Jiang, X.; Johnson, B. M.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kang, J. H.; Kapukchyan, D.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Khachatryan, V.; Khanzadeev, A.; Kim, C.; Kim, D. J.; Kim, E.-J.; Kim, M.; Kim, M. H.; Kincses, D.; Kistenev, E.; Klatsky, J.; Kline, P.; Koblesky, T.; Kotov, D.; Kudo, S.; Kurita, K.; Kwon, Y.; Lajoie, J. G.; Lallow, E. O.; Lebedev, A.; Lee, S.; Lee, S. H.; Leitch, M. J.; Leung, Y. H.; Lewis, N. A.; Li, X.; Lim, S. H.; Liu, L. D.; Liu, M. X.; Loggins, V.-R.; Lökös, S.; Lovasz, K.; Lynch, D.; Majoros, T.; Makdisi, Y. I.; Makek, M.; Malaev, M.; Manko, V. I.; Mannel, E.; Masuda, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Mendoza, M.; Metzger, W. J.; Mignerey, A. C.; Mihalik, D. E.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Miyasaka, S.; Mizuno, S.; Montuenga, P.; Moon, T.; Morrison, D. P.; Morrow, S. I. M.; Murakami, T.; Murata, J.; Nagai, K.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakano, K.; Nattrass, C.; Niida, T.; Nouicer, R.; Novák, T.; Novitzky, N.; Novotny, R.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ottino, G. J.; Ozawa, K.; Pantuev, V.; Papavassiliou, V.; Park, J. S.; Park, S.; Pate, S. F.; Patel, M.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perezlara, C. E.; Perry, J.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pisani, R. P.; Pun, A.; Purschke, M. L.; Radzevich, P. V.; Read, K. F.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richford, D.; Rinn, T.; Rolnick, S. D.; Rosati, M.; Rowan, Z.; Runchey, J.; Safonov, A. S.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seidl, R.; Sen, A.; Seto, R.; Sexton, A.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shioya, T.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Singh, B. K.; Singh, C. P.; Singh, V.; Skoby, M. J.; Slunečka, M.; Smith, K. L.; Snowball, M.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Stoll, S. P.; Sugitate, T.; Sukhanov, A.; Sumita, T.; Sun, J.; Syed, S.; Sziklai, J.; Takeda, A.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarnai, G.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Tomášek, M.; Towell, C. L.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vazquez-Carson, S.; Velkovska, J.; Virius, M.; Vrba, V.; Vukman, N.; Wang, X. R.; Wang, Z.; Watanabe, Y.; Watanabe, Y. S.; Wong, C. P.; Woody, C. L.; Xu, C.; Xu, Q.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yamamoto, H.; Yanovich, A.; Yin, P.; Yoo, J. H.; Yoon, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zharko, S.; Zou, L.; Phenix Collaboration

    2018-02-01

    Recently, multiparticle-correlation measurements of relativistic p /d /He 3 +Au , p +Pb , and even p +p collisions show surprising collective signatures. Here, we present beam-energy-scan measurements of two-, four-, and six-particle angular correlations in d +Au collisions at √{sN N}=200 , 62.4, 39, and 19.6 GeV. We also present measurements of two- and four-particle angular correlations in p +Au collisions at √{sN N}=200 GeV . We find the four-particle cumulant to be real valued for d +Au collisions at all four energies. We also find that the four-particle cumulant in p +Au has the opposite sign as that in d +Au . Further, we find that the six-particle cumulant agrees with the four-particle cumulant in d +Au collisions at 200 GeV, indicating that nonflow effects are subdominant. These observations provide strong evidence that the correlations originate from the initial geometric configuration, which is then translated into the momentum distribution for all particles, commonly referred to as collectivity.

  4. Reduction of degradation in vapor phase transported InP/InGaAsP mushroom stripe lasers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jung, H.; Burkhardt, E.G.; Pfister, W.

    1988-10-03

    The rapid degradation rate generally observed in InP/InGaAsP mushroom stripe lasers can be considerably decreased by regrowing the open sidewalls of the active stripe with low-doped InP in a second epitaxial step using the hydride vapor phase transport technique. This technique does not change the fundamental laser parameters like light-current and current-voltage characteristics. Because of this drastic reduction in degradation, the vapor phase epitaxy regrown InP/InGaAsP mushroom laser seems to be an interesting candidate for application in optical communication.

  5. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Research on reverse recovery characteristics of SiGeC p-i-n diodes

    NASA Astrophysics Data System (ADS)

    Gao, Yong; Liu, Jing; Yang, Yuan

    2008-12-01

    This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on hetero-junction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon, compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.

  6. Parametric amplification of 100 fs mid-infrared pulses in ZnGeP2 driven by a Ho:YAG chirped-pulse amplifier.

    PubMed

    Kanai, Tsuneto; Malevich, Pavel; Kangaparambil, Sarayoo Sasidharan; Ishida, Kakuta; Mizui, Makoto; Yamanouchi, Kaoru; Hoogland, Heinar; Holzwarth, Ronald; Pugzlys, Audrius; Baltuska, Andrius

    2017-02-15

    We report on the parametric generation of 100 fs sub-6-cycle 40 μJ pulses with the center wavelength at 5.2 μm using a 1 ps 2.1 μm pump laser and a dispersion management scheme based on bulk material. Our optically synchronized amplifier chain consists of a Ho:YAG chirped-pulse amplifier and white-light-seeded optical parametric amplifiers providing simultaneous passive carrier-envelope phase locking of three ultrashort longwave pulses at the pump, signal, and idler wavelengths corresponding, respectively, to 2.1, 3.5, and 5.2 μm. We also demonstrate bandwidth enhancement and efficient control over nonlinear spectral phase in the regime of cascaded χ2 nonlinearity in ZnGeP2.

  7. Memory characteristics of metal-oxide-semiconductor structures based on Ge nanoclusters-embedded GeO(x) films grown at low temperature.

    PubMed

    Lin, Tzu-Shun; Lou, Li-Ren; Lee, Ching-Ting; Tsai, Tai-Cheng

    2012-03-01

    The memory devices constructed from the Ge-nanoclusters embedded GeO(x) layer deposited by the laser-assisted chemical vapor deposition (LACVD) system were fabricated. The Ge nanoclusters were observed by a high-resolution transmission electron microscopy. Using the capacitance versus voltage (C-V) and the conductance versus voltage (G-V) characteristics measured under various frequencies, the memory effect observed in the C-V curves was dominantly attributed to the charge storage in the Ge nanoclusters. Furthermore, the defects existed in the deposited film and the interface states were insignificant to the memory performances. Capacitance versus time (C-t) measurement was also executed to evaluate the charge retention characteristics. The charge storage and retention behaviors of the devices demonstrated that the Ge nanoclusters grown by the LACVD system at low temperature are promising for memory device applications.

  8. Laser Induced Fluorescence Detection of Gums in Jet Fuels

    DTIC Science & Technology

    1992-05-01

    Classification) Laser Induced Fluorescence Detection of GLus in Jet Fuels 12 PERSONAL AUTHOR(S) David W. Naegeli and Ralph H. Hill 13a. TYPE OF REPORT 13b...degraded jet fuel.( ) 47 REFERENCES 1. Fodor, G.E.; Naegeli , D.W.; Kohl, K.B.; Cuellar, J.P., Jr., Interim Report BFLRF No. 199, AD A163590, Belvoir Fuels...and Lubricants Research Facility, Southwest Research Institute, San Antonio, TX, June 1985. 2. Fodor, G.E.; Naegeli , D.W., Proceedings of the 2nd

  9. Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

    NASA Technical Reports Server (NTRS)

    Vandersande, Jan W.; Wood, Charles; Draper, Susan

    1987-01-01

    Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

  10. Spectral asymmetry of atoms in the van der Waals potential of an optical nanofiber

    NASA Astrophysics Data System (ADS)

    Patterson, B. D.; Solano, P.; Julienne, P. S.; Orozco, L. A.; Rolston, S. L.

    2018-03-01

    We measure the modification of the transmission spectra of cold 87Rb atoms in the proximity of an optical nanofiber (ONF). Van der Waals interactions between the atoms an the ONF surface decrease the resonance frequency of atoms closer to the surface. An asymmetric spectra of the atoms holds information of their spatial distribution around the ONF. We use a far-detuned laser beam coupled to the ONF to thermally excite atoms at the ONF surface. We study the change of transmission spectrum of these atoms as a function of heating laser power. A semiclassical phenomenological model for the thermal excitation of atoms in the atom-surface van der Waals bound states is in good agreement with the measurements. This result suggests that van der Waals potentials could be used to trap and probe atoms at few nanometers from a dielectric surface, a key tool for hybrid photonic-atomic quantum systems.

  11. Modellierung des Einflusses der Landnutzung auf die Hochwasserentstehung in der Mesoskala

    NASA Astrophysics Data System (ADS)

    Niehoff, Daniel

    2001-10-01

    ösender Niederschläge eher klein ist. Stärkere Veränderungen ergeben sich hingegen aus einer Änderung der Infiltrationsbedingungen. Die Grenzen der entwickelten Methodik zeigen sich am deutlichsten bei der Simulation veränderter landwirtschaftlicher Bewirtschaftungsmethoden, deren mathematische Beschreibung und zahlenmäßige Charakterisierung aufgrund der Komplexität der beteiligten Prozesse mit großen Unsicherheiten behaftet ist. Die Modellierungsergebnisse belegen darüber hinaus, dass pauschale Aussagen zum Einfluss der Landnutzung auf die Hochwasserentstehung aufgrund der entscheidenden Bedeutung der klimatischen und physiographischen Randbedingungen unzulässig sind. Zu den klimatischen Randbedingungen zählen sowohl Niederschlagsintensität und -dauer als auch die Feuchtebedingungen vor einem hochwasserauslösenden Niederschlag. Die physiographischen Randbedingungen sind von der geomorphologischen und geologischen Ausstattung des Gebiets vorgegeben. Weiterhin muss der räumliche und zeitliche Maßstab, über den Aussagen getroffen werden, klar definiert sein, da sich mit steigender Einzugsgebietsgröße die relative Bedeutung sowohl der verschiedenen Niederschlagstypen als auch der physiographischen Eigenschaften verschiebt. Dies wird in der vorliegenden Arbeit im Gegensatz zu vielen anderen Untersuchungen konsequent berücksichtigt. In Abhängigkeit von Randbedingungen und räumlichen Maßstab sind aufgrund der gewonnen Erkenntnisse folgende Aussagen zum Einfluss von Landnutzungsänderungen auf die Hochwasserentstehung möglich: (1) Für intensive konvektive Niederschlagsereignisse mit tendenziell geringer Vorfeuchte ist der Einfluss der Landnutzung größer als für langanhaltende advektive Niederschläge geringer Intensität, da im ersten Fall veränderte Infiltrationsbedingungen stärker zum Tragen kommen als bei kleinen Niederschlagsintensitäten. (2) In kleinen Einzugsgebieten, wo kleinräumige Konvektivzellen zu Hochwassern führen können, ist der Einfluss der

  12. Measurement of KS0 and K*0 in p +p ,d +Au , and Cu + Cu collisions at √{sNN}=200 GeV

    NASA Astrophysics Data System (ADS)

    Adare, A.; Afanasiev, S.; Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Akimoto, R.; Al-Bataineh, H.; Alexander, J.; Alfred, M.; Angerami, A.; Aoki, K.; Apadula, N.; Aphecetche, L.; Aramaki, Y.; Armendariz, R.; Aronson, S. H.; Asai, J.; Asano, H.; Atomssa, E. T.; Averbeck, R.; Awes, T. C.; Azmoun, B.; Babintsev, V.; Bai, M.; Baksay, G.; Baksay, L.; Baldisseri, A.; Bandara, N. S.; Bannier, B.; Barish, K. N.; Barnes, P. D.; Bassalleck, B.; Basye, A. T.; Bathe, S.; Batsouli, S.; Baublis, V.; Baumann, C.; Bazilevsky, A.; Beaumier, M.; Beckman, S.; Belikov, S.; Belmont, R.; Bennett, R.; Berdnikov, A.; Berdnikov, Y.; Bhom, J. H.; Bickley, A. A.; Black, D.; Blau, D. S.; Boissevain, J. G.; Bok, J. S.; Borel, H.; Boyle, K.; Brooks, M. L.; Bryslawskyj, J.; Buesching, H.; Bumazhnov, V.; Bunce, G.; Butsyk, S.; Campbell, S.; Caringi, A.; Chang, B. S.; Charvet, J.-L.; Chen, C.-H.; Chernichenko, S.; Chi, C. Y.; Chiba, J.; Chiu, M.; Choi, I. J.; Choi, J. B.; Choudhury, R. K.; Christiansen, P.; Chujo, T.; Chung, P.; Churyn, A.; Chvala, O.; Cianciolo, V.; Citron, Z.; Cleven, C. R.; Cole, B. A.; Comets, M. P.; Conesa Del Valle, Z.; Connors, M.; Constantin, P.; Csanád, M.; Csörgő, T.; Dahms, T.; Dairaku, S.; Danchev, I.; Das, K.; Datta, A.; Daugherity, M. S.; David, G.; Dayananda, M. K.; Deaton, M. B.; Deblasio, K.; Dehmelt, K.; Delagrange, H.; Denisov, A.; D'Enterria, D.; Deshpande, A.; Desmond, E. J.; Dharmawardane, K. V.; Dietzsch, O.; Ding, L.; Dion, A.; Do, J. H.; Donadelli, M.; Drapier, O.; Drees, A.; Drees, K. A.; Dubey, A. K.; Durham, J. M.; Durum, A.; Dutta, D.; Dzhordzhadze, V.; D'Orazio, L.; Edwards, S.; Efremenko, Y. V.; Egdemir, J.; Ellinghaus, F.; Emam, W. S.; Engelmore, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Eyser, K. O.; Fadem, B.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fleuret, F.; Fokin, S. L.; Fraenkel, Z.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fujiwara, K.; Fukao, Y.; Fusayasu, T.; Gadrat, S.; Gal, C.; Gallus, P.; Garg, P.; Garishvili, I.; Ge, H.; Giordano, F.; Glenn, A.; Gong, H.; Gonin, M.; Gosset, J.; Goto, Y.; Granier de Cassagnac, R.; Grau, N.; Greene, S. V.; Grim, G.; Grosse Perdekamp, M.; Gu, Y.; Gunji, T.; Guragain, H.; Gustafsson, H.-Å.; Hachiya, T.; Hadj Henni, A.; Haegemann, C.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamblen, J.; Han, R.; Han, S. Y.; Hanks, J.; Harada, H.; Hartouni, E. P.; Haruna, K.; Hasegawa, S.; Haslum, E.; Hayano, R.; He, X.; Heffner, M.; Hemmick, T. K.; Hester, T.; Hiejima, H.; Hill, J. C.; Hobbs, R.; Hohlmann, M.; Hollis, R. S.; Holzmann, W.; Homma, K.; Hong, B.; Horaguchi, T.; Hornback, D.; Hoshino, T.; Huang, S.; Ichihara, T.; Ichimiya, R.; Iinuma, H.; Ikeda, Y.; Imai, K.; Imazu, Y.; Inaba, M.; Inoue, Y.; Iordanova, A.; Isenhower, D.; Isenhower, L.; Ishihara, M.; Isobe, T.; Issah, M.; Isupov, A.; Ivanischev, D.; Ivanishchev, D.; Iwanaga, Y.; Jacak, B. V.; Jeon, S. J.; Jezghani, M.; Jia, J.; Jiang, X.; Jin, J.; Jinnouchi, O.; Johnson, B. M.; Jones, T.; Joo, E.; Joo, K. S.; Jouan, D.; Jumper, D. S.; Kajihara, F.; Kametani, S.; Kamihara, N.; Kamin, J.; Kaneta, M.; Kang, J. H.; Kang, J. S.; Kanou, H.; Kapustinsky, J.; Karatsu, K.; Kasai, M.; Kawall, D.; Kawashima, M.; Kazantsev, A. V.; Kempel, T.; Key, J. A.; Khachatryan, V.; Khanzadeev, A.; Kihara, K.; Kijima, K. M.; Kikuchi, J.; Kim, A.; Kim, B. I.; Kim, C.; Kim, D. H.; Kim, D. J.; Kim, E.; Kim, E.-J.; Kim, H.-J.; Kim, M.; Kim, Y.-J.; Kim, Y. K.; Kinney, E.; Kiss, Á.; Kistenev, E.; Kiyomichi, A.; Klatsky, J.; Klay, J.; Klein-Boesing, C.; Kleinjan, D.; Kline, P.; Koblesky, T.; Kochenda, L.; Kochetkov, V.; Kofarago, M.; Komkov, B.; Konno, M.; Koster, J.; Kotchetkov, D.; Kotov, D.; Kozlov, A.; Král, A.; Kravitz, A.; Kubart, J.; Kunde, G. J.; Kurihara, N.; Kurita, K.; Kurosawa, M.; Kweon, M. J.; Kwon, Y.; Kyle, G. S.; Lacey, R.; Lai, Y. S.; Lajoie, J. G.; Lebedev, A.; Lee, D. M.; Lee, J.; Lee, K. B.; Lee, K. S.; Lee, M. K.; Lee, S. H.; Lee, T.; Leitch, M. J.; Leite, M. A. L.; Leitgab, M.; Lenzi, B.; Li, X.; Lichtenwalner, P.; Liebing, P.; Lim, S. H.; Linden Levy, L. A.; Liška, T.; Litvinenko, A.; Liu, H.; Liu, M. X.; Love, B.; Lynch, D.; Maguire, C. F.; Makdisi, Y. I.; Makek, M.; Malakhov, A.; Malik, M. D.; Manion, A.; Manko, V. I.; Mannel, E.; Mao, Y.; Mašek, L.; Masui, H.; Matathias, F.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Means, N.; Meles, A.; Mendoza, M.; Meredith, B.; Miake, Y.; Mibe, T.; Mignerey, A. C.; Mikeš, P.; Miki, K.; Miller, A. J.; Miller, T. E.; Milov, A.; Mioduszewski, S.; Mishra, D. K.; Mishra, M.; Mitchell, J. T.; Mitrovski, M.; Miyasaka, S.; Mizuno, S.; Mohanty, A. K.; Montuenga, P.; Moon, H. J.; Moon, T.; Morino, Y.; Morreale, A.; Morrison, D. P.; Moukhanova, T. V.; Mukhopadhyay, D.; Murakami, T.; Murata, J.; Mwai, A.; Nagamiya, S.; Nagata, Y.; Nagle, J. L.; Naglis, M.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakamiya, Y.; Nakamura, K. R.; Nakamura, T.; Nakano, K.; Nam, S.; Nattrass, C.; Netrakanti, P. K.; Newby, J.; Nguyen, M.; Nihashi, M.; Niida, T.; Norman, B. E.; Nouicer, R.; Novitzky, N.; Nyanin, A. S.; Oakley, C.; O'Brien, E.; Oda, S. X.; Ogilvie, C. A.; Ohnishi, H.; Oka, M.; Okada, K.; Omiwade, O. O.; Onuki, Y.; Orjuela Koop, J. D.; Oskarsson, A.; Ouchida, M.; Ozaki, H.; Ozawa, K.; Pak, R.; Pal, D.; Palounek, A. P. T.; Pantuev, V.; Papavassiliou, V.; Park, I. H.; Park, J.; Park, S.; Park, S. K.; Park, W. J.; Pate, S. F.; Patel, L.; Patel, M.; Pei, H.; Peng, J.-C.; Pereira, H.; Perepelitsa, D. V.; Perera, G. D. N.; Peresedov, V.; Peressounko, D. Yu.; Perry, J.; Petti, R.; Pinkenburg, C.; Pinson, R.; Pisani, R. P.; Proissl, M.; Purschke, M. L.; Purwar, A. K.; Qu, H.; Rak, J.; Rakotozafindrabe, A.; Ravinovich, I.; Read, K. F.; Rembeczki, S.; Reuter, M.; Reygers, K.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richardson, E.; Riveli, N.; Roach, D.; Roche, G.; Rolnick, S. D.; Romana, A.; Rosati, M.; Rosen, C. A.; Rosendahl, S. S. E.; Rosnet, P.; Rowan, Z.; Rubin, J. G.; Rukoyatkin, P.; Ružička, P.; Rykov, V. L.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sakai, S.; Sakashita, K.; Sakata, H.; Sako, H.; Samsonov, V.; Sano, S.; Sarsour, M.; Sato, S.; Sato, T.; Sawada, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seele, J.; Seidl, R.; Semenov, V.; Sen, A.; Seto, R.; Sett, P.; Sexton, A.; Sharma, D.; Shein, I.; Shevel, A.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shoji, K.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Silvestre, C.; Sim, K. S.; Singh, B. K.; Singh, C. P.; Singh, V.; Skutnik, S.; Slunečka, M.; Soldatov, A.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Staley, F.; Stankus, P. W.; Stenlund, E.; Stepanov, M.; Ster, A.; Stoll, S. P.; Sugitate, T.; Suire, C.; Sukhanov, A.; Sumita, T.; Sun, J.; Sziklai, J.; Tabaru, T.; Takagi, S.; Takagui, E. M.; Takahara, A.; Taketani, A.; Tanabe, R.; Tanaka, Y.; Taneja, S.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarján, P.; Themann, H.; Thomas, D.; Thomas, T. L.; Timilsina, A.; Todoroki, T.; Togawa, M.; Toia, A.; Tojo, J.; Tomášek, L.; Tomášek, M.; Torii, H.; Towell, M.; Towell, R.; Towell, R. S.; Tram, V.-N.; Tserruya, I.; Tsuchimoto, Y.; Vale, C.; Valle, H.; van Hecke, H. W.; Vargyas, M.; Vazquez-Zambrano, E.; Veicht, A.; Velkovska, J.; Vértesi, R.; Vinogradov, A. A.; Virius, M.; Vrba, V.; Vznuzdaev, E.; Wagner, M.; Walker, D.; Wang, X. R.; Watanabe, D.; Watanabe, K.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; Wei, R.; Wessels, J.; Whitaker, S.; White, S. N.; Winter, D.; Wolin, S.; Woody, C. L.; Wright, R. M.; Wysocki, M.; Xia, B.; Xie, W.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yamaura, K.; Yang, R.; Yanovich, A.; Yasin, Z.; Ying, J.; Yokkaichi, S.; Yoon, I.; You, Z.; Young, G. R.; Younus, I.; Yushmanov, I. E.; Zajc, W. A.; Zaudtke, O.; Zelenski, A.; Zhang, C.; Zhou, S.; Zimányi, J.; Zolin, L.; Phenix Collaboration

    2014-11-01

    The PHENIX experiment at the Relativistic Heavy Ion Collider has performed a systematic study of KS0 and K*0 meson production at midrapidity in p +p ,d +Au , and Cu +Cu collisions at √{s NN}=200 GeV. The KS0 and K*0 mesons are reconstructed via their KS0→π0(→γ γ ) π0(→γ γ ) and K*0→K±π∓ decay modes, respectively. The measured transverse-momentum spectra are used to determine the nuclear modification factor of KS0 and K*0 mesons in d +Au and Cu +Cu collisions at different centralities. In the d +Au collisions, the nuclear modification factor of KS0 and K*0 mesons is almost constant as a function of transverse momentum and is consistent with unity, showing that cold-nuclear-matter effects do not play a significant role in the measured kinematic range. In Cu +Cu collisions, within the uncertainties no nuclear modification is registered in peripheral collisions. In central collisions, both mesons show suppression relative to the expectations from the p +p yield scaled by the number of binary nucleon-nucleon collisions in the Cu +Cu system. In the pT range 2 - 5 GeV /c , the strange mesons (KS0,K*0) similarly to the ϕ meson with hidden strangeness, show an intermediate suppression between the more suppressed light quark mesons (π0) and the nonsuppressed baryons (p ,p ¯). At higher transverse momentum, pT>5 GeV /c , production of all particles is similarly suppressed by a factor of ≈2 .

  13. Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

    NASA Astrophysics Data System (ADS)

    Senaratne, C. L.; Wallace, P. M.; Gallagher, J. D.; Sims, P. E.; Kouvetakis, J.; Menéndez, J.

    2016-07-01

    Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%-16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1-ySny/p-Ge1-zSnz type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architectures incorporating Ge1-xSnx intermediate layers (x ˜ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge1-x-ySixSny alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account

  14. Ultrafast amorphization in Ge(10)Sb(2)Te(13) thin film induced by single femtosecond laser pulse.

    PubMed

    Konishi, Mitsutaka; Santo, Hisashi; Hongo, Yuki; Tajima, Kazuyuki; Hosoi, Masaharu; Saiki, Toshiharu

    2010-06-20

    We demonstrate amorphization in a Ge(10)Sb(2)Te(13) (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5ps of this drop.

  15. Plasma Accelerators Race to 10 GeV and Beyond

    NASA Astrophysics Data System (ADS)

    Katsouleas, Tom

    2005-10-01

    This paper reviews the concepts, recent progress and current challenges for realizing the tremendous electric fields in relativistic plasma waves for applications ranging from tabletop particle accelerators to high-energy physics. Experiments in the 90's on laser-driven plasma wakefield accelerators at several laboratories around the world demonstrated the potential for plasma wakefields to accelerate intense bunches of self-trapped particles at rates as high as 100 GeV/m in mm-scale gas jets. These early experiments offered impressive gradients but large energy spread (100%) and short interaction lengths. Major breakthroughs have recently occurred on both fronts. Three groups (LBL-US, LOA-France and RAL-UK) have now entered a new regime of laser wakefield acceleration resulting in 100 MeV mono-energetic beams with up to nanoCoulombs of charge and very small angular spread. Simulations suggest that current lasers are just entering this new regime, and the scaling to higher energies appears attractive. In parallel with the progress in laser-driven wakefields, particle-beam driven wakefield accelerators are making large strides. A series of experiments using the 30 GeV beam of the Stanford Linear Accelerator Center (SLAC) has demonstrated high-gradient acceleration of electrons and positrons in meter-scale plasmas. The UCLA/USC/SLAC collaboration has accelerated electrons beyond 1 GeV and is aiming at 10 GeV in 30 cm as the next step toward a ``plasma afterburner,'' a concept for doubling the energy of a high-energy collider in a few tens of meters of plasma. In addition to wakefield acceleration, these and other experiments have demonstrated the rich physics bounty to be reaped from relativistic beam-plasma interactions. This includes plasma lenses capable of focusing particle beams to the highest density ever produced, collective radiation mechanisms capable of generating high-brightness x-ray beams, collective refraction of particles at a plasma interface, and

  16. Phase stability of iron germanate, FeGeO3, to 127 GPa

    NASA Astrophysics Data System (ADS)

    Dutta, R.; Tracy, S. J.; Stan, C. V.; Prakapenka, V. B.; Cava, R. J.; Duffy, T. S.

    2018-04-01

    The high-pressure behavior of germanates is of interest as these compounds serve as analogs for silicates of the deep Earth. Current theoretical and experimental studies of iron germanate, FeGeO3, are limited. Here, we have examined the behavior of FeGeO3 to 127 GPa using the laser-heated diamond anvil cell combined with in situ synchrotron X-ray diffraction. Upon compression at room temperature, the ambient-pressure clinopyroxene phase transforms to a disordered triclinic phase [FeGeO3 (II)] at 18 GPa in agreement with earlier studies. An additional phase transition to FeGeO3 (III) occurs above 54 GPa at room temperature. Laser-heating experiments ( 1200-2200 K) were conducted at three pressures (33, 54, and 123 GPa) chosen to cover the stability regions of different GeO2 polymorphs. In all cases, we observe that FeGeO3 dissociates into GeO2 + FeO at high pressure and temperature conditions. Neither the perovskite nor the post-perovskite phase was observed up to 127 GPa at ambient or high temperatures. The results are consistent with the behavior of FeSiO3, which also dissociates into a mixture of the oxides (FeO + SiO2) at least up to 149 GPa.

  17. Dijet imbalance measurements in Au +Au and p p collisions at √{sN N}=200 GeV at STAR

    NASA Astrophysics Data System (ADS)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Alekseev, I.; Anderson, D. M.; Aoyama, R.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Ashraf, M. U.; Attri, A.; Averichev, G. S.; Bai, X.; Bairathi, V.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandenburg, J. D.; Brandin, A. V.; Brown, D.; Bunzarov, I.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chatterjee, A.; Chattopadhyay, S.; Chen, J. H.; Chen, X.; Cheng, J.; Cherney, M.; Christie, W.; Contin, G.; Crawford, H. J.; Das, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, C. M.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Elsey, N.; Engelage, J.; Eppley, G.; Esha, R.; Esumi, S.; Evdokimov, O.; Ewigleben, J.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Fedorisin, J.; Feng, Z.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Fulek, L.; Gagliardi, C. A.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Greiner, L.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, A.; Gupta, S.; Guryn, W.; Hamad, A. I.; Hamed, A.; Haque, R.; Harris, J. W.; He, L.; Heppelmann, S.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Horvat, S.; Huang, X.; Huang, B.; Huang, H. Z.; Huang, T.; Huck, P.; Humanic, T. J.; Igo, G.; Jacobs, W. W.; Jentsch, A.; Jia, J.; Jiang, K.; Jowzaee, S.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z.; Kikoła, D. P.; Kisel, I.; Kisiel, A.; Kochenda, L.; Koetke, D. D.; Kosarzewski, L. K.; Kraishan, A. F.; Kravtsov, P.; Krueger, K.; Kumar, L.; Lamont, M. A. C.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, W.; Li, X.; Li, X.; Li, Y.; Li, C.; Lin, T.; Lisa, M. A.; Liu, Y.; Liu, F.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Luo, S.; Ma, G. L.; Ma, L.; Ma, R.; Ma, Y. G.; Magdy, N.; Majka, R.; Manion, A.; Margetis, S.; Markert, C.; Matis, H. S.; McDonald, D.; McKinzie, S.; Meehan, K.; Mei, J. C.; Miller, Z. W.; Minaev, N. G.; Mioduszewski, S.; Mishra, D.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nasim, Md.; Nayak, T. K.; Nigmatkulov, G.; Niida, T.; Nogach, L. V.; Nonaka, T.; Novak, J.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V. A.; Olvitt, D.; Page, B. S.; Pak, R.; Pan, Y. X.; Pandit, Y.; Panebratsev, Y.; Pawlik, B.; Pei, H.; Perkins, C.; Pile, P.; Pluta, J.; Poniatowska, K.; Porter, J.; Posik, M.; Poskanzer, A. M.; Pruthi, N. K.; Przybycien, M.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Ray, R. L.; Reed, R.; Rehbein, M. J.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roth, J. D.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Sakrejda, I.; Salur, S.; Sandweiss, J.; Schambach, J.; Scharenberg, R. P.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Seger, J.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, M. K.; Sharma, A.; Sharma, B.; Shen, W. Q.; Shi, S. S.; Shi, Z.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Singha, S.; Skoby, M. J.; Smirnov, D.; Smirnov, N.; Solyst, W.; Song, L.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stepanov, M.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Sugiura, T.; Sumbera, M.; Summa, B.; Sun, X. M.; Sun, Z.; Sun, Y.; Surrow, B.; Svirida, D. N.; Tang, Z.; Tang, A. H.; Tarnowsky, T.; Tawfik, A.; Thäder, J.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Todoroki, T.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Tsai, O. D.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vasiliev, A. N.; Vertesi, R.; Videbæk, F.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, F.; Wang, J. S.; Wang, G.; Wang, Y.; Wang, Y.; Webb, G.; Webb, J. C.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y.; Xiao, Z. G.; Xie, G.; Xie, W.; Xin, K.; Xu, Q. H.; Xu, H.; Xu, Y. F.; Xu, Z.; Xu, J.; Xu, N.; Yang, S.; Yang, Q.; Yang, Y.; Yang, C.; Yang, Y.; Yang, Y.; Ye, Z.; Ye, Z.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zbroszczyk, H.; Zha, W.; Zhang, X. P.; Zhang, J.; Zhang, J.; Zhang, Z.; Zhang, S.; Zhang, J. B.; Zhang, Y.; Zhang, S.; Zhao, J.; Zhong, C.; Zhou, L.; Zhu, X.; Zoulkarneeva, Y.; Zyzak, M.; STAR Collaboration

    2017-08-01

    We report the first dijet transverse momentum asymmetry measurements from Au +Au and p p collisions at RHIC. The two highest-energy back-to-back jets reconstructed from fragments with transverse momenta above 2 GeV /c display a significantly higher momentum imbalance in heavy-ion collisions than in the p p reference. When reexamined with correlated soft particles included, we observe that these dijets then exhibit a unique new feature—momentum balance is restored to that observed in p p for a jet resolution parameter of R =0.4 , while rebalancing is not attained with a smaller value of R =0.2 .

  18. Laser-induced self-organization in silicon-germanium thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Weizman, M.; Nickel, N. H.; Sieber, I.

    We report on the formation of self-organized structures in thin films of silicon-germanium (Si{sub 1-x}Ge{sub x}) with 0.3laser irradiation. Amorphous SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that changes to a hillock structure when the samples are irradiated with additional laser pulses. The topographic structure is coupled to a periodic compositional variation of the SiGe alloy. The periodicity length of the structure after a single laser pulse is in the range of 0.3-1.1 {mu}m, depending on Ge content, layer thickness, and laser fluence, and rapidly grows withmore » increasing number of laser pulses. In situ conductivity measurements during solidification support the theoretical instability analysis that we have done, based on the Mullins-Sekerka theory, to elucidate the nature of this phenomenon. Moreover, as theoretically predicted, the self-organization phenomenon can be turned off by increasing the solidification velocity.« less

  19. Der II. Hauptsatz der Wärmelehre

    NASA Astrophysics Data System (ADS)

    Heintze, Joachim

    Wir haben in (4.44) den II. Hauptsatz als empirische Tatsache folgendermaßen formuliert: (i) Wärmeenergie geht von selbst nur von einem wärmeren Körper auf einen kälteren über, niemals in der umgekehrten Richtung. Nun werden wir beweisen, dass sich aus diesem Prinzip folgende äquivalente Formulierungen für den II. Hauptsatz ableiten lassen: (ii) Es ist unmöglich, ein Perpetuum mobile zweiter Art zu bauen, d. h. eine Maschine, die fortlaufend Wärmeenergie vollständig in mechanische Arbeit umsetzen kann. Eine Wärmekraftmaschine, die einen Kreisprozess mit der höchsten Temperatur Tw und der niedrigsten Temperatur Tk durchläuft, hat höchstens den Carnotschen Wirkungsgrad c = (Tw - Tk)/Tw. Wenn in der Maschine nur reversible Prozesse ablaufen, die gesamte Wärmezufuhr bei der Temperatur Tw erfolgt und ausschließlich bei der Temperatur Tw gekühlt wird, ist ihr Wirkungsgrad = C. Es gibt keine Wärmekraftmaschine, die eine bessere Ausnutzung der Wärmeenergie ermöglicht. (iv) In jedem thermodynamischen System existiert die Zustandsgröße Entropie, definiert durch ihr Differential dS = (dQrev)/T . Entropie kann erzeugt, aber nicht vernichtet werden. Bei Zustandsänderungen, die in einem abgeschlossenen System ablaufen, nimmt die Entropie entweder zu (irreversible Prozesse), oder sie bleibt konstant (reversible Prozesse). Im Anschluss an (iii) werden wir zur Definition der thermodynamischen Temperatur und bei der Diskussion von (iv) zu einem tieferen Verständnis der Entropie gelangen. Es zeigt sich, dass die Entropie das eigentliche Bindeglied zwischen Mechanik und Wärmelehre darstellt. Am Ende des Kapitels werden wir einige Anwendungen des II. Hauptsatzes betrachten.

  20. Improvement in thermoelectric power factor of mechanically alloyed p-type SiGe by incorporation of TiB{sub 2}

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ahmad, Sajid, E-mail: sajidahmadiitkgp@gmail.com; Dubey, K.; Bhattacharya, Shovit

    2016-05-23

    Nearly 60% of the world’s useful energy is wasted as heat and recovering a fraction of this waste heat by converting it as useful electrical power is an important area of research{sup [1]}. Thermoelectric power generators (TEG) are solid state devices which converts heat into electricity. TEG consists of n and p-type thermoelements connected electrically in series and thermally in parallel{sup [2]}. Silicon germanium (SiGe) alloy is one of the conventional high temperature thermoelectric materials and is being used in radio-isotopes based thermoelectric power generators for deep space exploration programs.Temperature (T) dependence of thermoelectric (TE) properties of p-type SiGe andmore » p-type SiGe-x wt.%TiB{sub 2} (x=6,8,10%) nanocomposite materials has been studied with in the temperature range of 300 K to 1100 K. It is observed that there is an improvement in the power factor (α{sup 2}/ρ) of SiGe alloy on addition of TiB{sub 2} upto 8 wt.% that is mainly due to increase in the Seebeck coefficient (α) and electrical conductivity (σ) of the alloy.« less

  1. Localization of degradation in InP/InGaAsP mushroom stripe lasers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jung, H.; Marschall, P.

    1987-07-13

    The rapid degradation observed in InP/InGaAsP mushroom stripe lasers covered with phosphosilicate glass (PSG) was investigated by comparing the light-current characteristics as a function of the preparation technique. We were able to show that the PSG-covering layer is not the reason for the rapid degradation. By inspecting the light-current characteristics before and after degradation and by additional underetching the laser structure after degradation we were able to localize the degraded regions on the open side walls of the InGaAsP active layer.

  2. Impact of yttria stabilized zirconia nanoinclusions on the thermal conductivity of n-type Si80Ge20 alloys prepared by spark plasma sintering

    NASA Astrophysics Data System (ADS)

    Lahwal, Ali; Bhattacharya, S.; He, Jian; Wu, Di; Peterson, A.; Poon, S. J.; Williams, L.; Dehkordi, A. Mehdizadeh; Tritt, T. M.

    2015-04-01

    Nanocomposites have become a new paradigm for thermoelectric research in recent years and have resulted in the reduction of thermal conductivity via the nano-inclusion and grain boundary scattering. In this work, we report the preparation and thermoelectric study of SiGe-yttria stabilized zirconia (YSZ) nanocomposites prepared by Spark Plasma Sintering (SPS). We experimentally investigated the reduction of lattice thermal conductivity (κL) in the temperature range (30-800 K) of n-type Si80Ge20P2 alloys with the incorporation of YSZ nanoparticles (20-40 nm diameter) into the Si-Ge matrix. These samples synthesized by using the SPS technique were found to have densities > 95% of the theoretical density. The thermal conductivity, at both low and high temperatures, was measured by steady state and laser flash techniques, respectively. At room temperature, we observed approximately a 50% reduction in the lattice thermal conductivity as result of adding 10% YSZ by volume to the Si80Ge20P2 host matrix. A phenomenological model developed by Callaway was used to corroborate both the temperature dependence and reduction of κ L over the measured temperature range (30-800 K) of both Si80Ge20P2 and Si80Ge20P2 + YSZ samples. The observed κL is discussed and interpreted in terms of various phonon scattering mechanisms such as alloy disorder, the Umklapp phonon scattering, and boundary scattering. In addition, a contribution from the phonon scattering by YSZ nanoparticles was further included to account for the κL of Si80Ge20P2 + YSZ sample. The theoretical calculations are in reasonably good agreement with the experimental results for both the Si80Ge20P2 and Si80Ge20P2 + YSZ alloys.

  3. Ge{sub 0.83}Sn{sub 0.17} p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lei, Dian; Wang, Wei; Gong, Xiao, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org

    2016-01-14

    The effect of room temperature sulfur passivation of the surface of Ge{sub 0.83}Sn{sub 0.17} prior to high-k dielectric (HfO{sub 2}) deposition is investigated. X-ray photoelectron spectroscopy (XPS) was used to examine the chemical bonding at the interface of HfO{sub 2} and Ge{sub 0.83}Sn{sub 0.17}. Sulfur passivation is found to be effective in suppressing the formation of both Ge oxides and Sn oxides. A comparison of XPS results for sulfur-passivated and non-passivated Ge{sub 0.83}Sn{sub 0.17} samples shows that sulfur passivation of the GeSn surface could also suppress the surface segregation of Sn atoms. In addition, sulfur passivation reduces the interface trapmore » density D{sub it} at the high-k dielectric/Ge{sub 0.83}Sn{sub 0.17} interface from the valence band edge to the midgap of Ge{sub 0.83}Sn{sub 0.17}, as compared with a non-passivated control. The impact of the improved D{sub it} is demonstrated in Ge{sub 0.83}Sn{sub 0.17} p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs). Ge{sub 0.83}Sn{sub 0.17} p-MOSFETs with sulfur passivation show improved subthreshold swing S, intrinsic transconductance G{sub m,int}, and effective hole mobility μ{sub eff} as compared with the non-passivated control. At a high inversion carrier density N{sub inv} of 1 × 10{sup 13 }cm{sup −2}, sulfur passivation increases μ{sub eff} by 25% in Ge{sub 0.83}Sn{sub 0.17} p-MOSFETs.« less

  4. Forward neutral pion production in p + p and d + Au collisions at square root sNN=200 GeV.

    PubMed

    Adams, J; Aggarwal, M M; Ahammed, Z; Amonett, J; Anderson, B D; Arkhipkin, D; Averichev, G S; Badyal, S K; Bai, Y; Balewski, J; Barannikova, O; Barnby, L S; Baudot, J; Bekele, S; Belaga, V V; Bellingeri-Laurikainen, A; Bellwied, R; Berger, J; Bezverkhny, B I; Bharadwaj, S; Bhasin, A; Bhati, A K; Bhatia, V S; Bichsel, H; Bielcik, J; Bielcikova, J; Billmeier, A; Bland, L C; Blyth, C O; Blyth, S-L; Bonner, B E; Botje, M; Boucham, A; Bouchet, J; Brandin, A V; Bravar, A; Bystersky, M; Cadman, R V; Cai, X Z; Caines, H; Sánchez, M Calderón de la Barca; Catu, O; Cebra, D; Chajecki, Z; Chaloupka, P; Chattopadhyay, S; Chen, H F; Chen, J H; Chen, Y; Cheng, J; Cherney, M; Chikanian, A; Choi, H A; Christie, W; Coffin, J P; Cormier, T M; Cosentino, M R; Cramer, J G; Crawford, H J; Das, D; Das, S; Daugherity, M; de Moura, M M; Dedovich, T G; Dephillips, M; Derevschikov, A A; Didenko, L; Dietel, T; Dogra, S M; Dong, W J; Dong, X; Draper, J E; Du, F; Dubey, A K; Dunin, V B; Dunlop, J C; Mazumdar, M R Dutta; Eckardt, V; Edwards, W R; Efimov, L G; Emelianov, V; Engelage, J; Eppley, G; Erazmus, B; Estienne, M; Fachini, P; Faivre, J; Fatemi, R; Fedorisin, J; Filimonov, K; Filip, P; Finch, E; Fine, V; Fisyak, Y; Fornazier, K S F; Fox, B D; Fu, J; Gagliardi, C A; Gaillard, L; Gans, J; Ganti, M S; Geurts, F; Ghazikhanian, V; Ghosh, P; Gonzalez, J E; Gorbunov, Y G; Gos, H; Grachov, O; Grebenyuk, O; Grosnick, D; Guertin, S M; Guo, Y; Gupta, A; Gupta, N; Gutierrez, T D; Hallman, T J; Hamed, A; Harris, J W; Heinz, M; Henry, T W; Hepplemann, S; Hippolyte, B; Hirsch, A; Hjort, E; Hoffmann, G W; Horner, M J; Huang, H Z; Huang, S L; Hughes, E W; Humanic, T J; Igo, G; Ishihara, A; Jacobs, P; Jacobs, W W; Jiang, H; Jones, P G; Judd, E G; Kabana, S; Kang, K; Kaplan, M; Keane, D; Kechechyan, A; Khodyrev, V Yu; Kim, B C; Kiryluk, J; Kisiel, A; Kislov, E M; Klein, S R; Koetke, D D; Kollegger, T; Kopytine, M; Kotchenda, L; Kowalik, K L; Kramer, M; Kravtsov, P; Kravtsov, V I; Krueger, K; Kuhn, C; Kulikov, A I; Kumar, A; Kutuev, R Kh; Kuznetsov, A A; Lamb, R; Lamont, M A C; Landgraf, J M; Lange, S; Laue, F; Lauret, J; Lebedev, A; Lednicky, R; Lee, C-H; Lehocka, S; Levine, M J; Li, C; Li, Q; Li, Y; Lin, G; Lindenbaum, S J; Lisa, M A; Liu, F; Liu, H; Liu, J; Liu, L; Liu, Q J; Liu, Z; Ljubicic, T; Llope, W J; Long, H; Longacre, R S; Lopez-Noriega, M; Love, W A; Lu, Y; Ludlam, T; Lynn, D; Ma, G L; Ma, J G; Ma, Y G; Magestro, D; Mahajan, S; Mahapatra, D P; Majka, R; Mangotra, L K; Manweiler, R; Margetis, S; Markert, C; Martin, L; Marx, J N; Matis, H S; Matulenko, Yu A; McClain, C J; McShane, T S; Melnick, Yu; Meschanin, A; Miller, M L; Minaev, N G; Mironov, C; Mischke, A; Mishra, D K; Mitchell, J; Mioduszewski, S; Mohanty, B; Molnar, L; Moore, C F; Morozov, D A; Munhoz, M G; Nandi, B K; Nayak, S K; Nayak, T K; Nelson, J M; Netrakanti, P K; Nikitin, V A; Nogach, L V; Nurushev, S B; Odyniec, G; Ogawa, A; Okorokov, V; Oldenburg, M; Olson, D; Pal, S K; Panebratsev, Y; Panitkin, S Y; Pavlinov, A I; Pawlak, T; Peitzmann, T; Perevoztchikov, V; Perkins, C; Peryt, W; Petrov, V A; Phatak, S C; Picha, R; Planinic, M; Pluta, J; Porile, N; Porter, J; Poskanzer, A M; Potekhin, M; Potrebenikova, E; Potukuchi, B V K S; Prindle, D; Pruneau, C; Putschke, J; Rakness, G; Raniwala, R; Raniwala, S; Ravel, O; Ray, R L; Razin, S V; Reichhold, D; Reid, J G; Reinnarth, J; Renault, G; Retiere, F; Ridiger, A; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Rose, A; Roy, C; Ruan, L; Russcher, M J; Sahoo, R; Sakrejda, I; Salur, S; Sandweiss, J; Sarsour, M; Savin, I; Sazhin, P S; Schambach, J; Scharenberg, R P; Schmitz, N; Schweda, K; Seger, J; Selyuzhenkov, I; Seyboth, P; Shabetai, A; Shahaliev, E; Shao, M; Shao, W; Sharma, M; Shen, W Q; Shestermanov, K E; Shimanskiy, S S; Sichtermann, E; Simon, F; Singaraju, R N; Smirnov, N; Snellings, R; Sood, G; Sorensen, P; Sowinski, J; Speltz, J; Spinka, H M; Srivastava, B; Stadnik, A; Stanislaus, T D S; Stock, R; Stolpovsky, A; Strikhanov, M; Stringfellow, B; Suaide, A A P; Sugarbaker, E; Sumbera, M; Surrow, B; Swanger, M; Symons, T J M; de Toledo, A Szanto; Tai, A; Takahashi, J; Tang, A H; Tarnowsky, T; Thein, D; Thomas, J H; Timmins, A R; Timoshenko, S; Tokarev, M; Trainor, T A; Trentalange, S; Tribble, R E; Tsai, O D; Ulery, J; Ullrich, T; Underwood, D G; Buren, G Van; van der Kolk, N; van Leeuwen, M; Molen, A M Vander; Varma, R; Vasilevski, I M; Vasiliev, A N; Vernet, R; Vigdor, S E; Viyogi, Y P; Vokal, S; Voloshin, S A; Waggoner, W T; Wang, F; Wang, G; Wang, G; Wang, X L; Wang, Y; Wang, Y; Wang, Z M; Ward, H; Watson, J W; Webb, J C; Westfall, G D; Wetzler, A; Whitten, C; Wieman, H; Wissink, S W; Witt, R; Wood, J; Wu, J; Xu, N; Xu, Q H; Xu, Z; Xu, Z Z; Yepes, P; Yoo, I-K; Yurevich, V I; Zborovsky, I; Zhang, H; Zhang, W M; Zhang, Y; Zhang, Z P; Zhong, C; Zoulkarneev, R; Zoulkarneeva, Y; Zubarev, A N; Zuo, J X

    2006-10-13

    Measurements of the production of forward pi0 mesons from p + p and d + Au collisions at square root sNN=200 GeV are reported. The p + p yield generally agrees with next-to-leading order perturbative QCD calculations. The d + Au yield per binary collision is suppressed as eta increases, decreasing to approximately 30% of the p + p yield at eta =4.00, well below shadowing expectations. Exploratory measurements of azimuthal correlations of the forward pi0 with charged hadrons at eta approximately 0 show a recoil peak in p + p that is suppressed in d + Au at low pion energy. These observations are qualitatively consistent with a saturation picture of the low-x gluon structure of heavy nuclei.

  5. Measurements of Multiparticle Correlations in d + Au Collisions at 200, 62.4, 39, and 19.6 GeV and p + Au Collisions at 200 GeV and Implications for Collective Behavior

    DOE PAGES

    Aidala, C.; Akiba, Y.; Alfred, M.; ...

    2018-02-06

    Recently, multiparticle-correlation measurements of relativistic p/d/ 3He + Au, p + Pb, and even p + p collisions show surprising collective signatures. In this paper, we present beam-energy-scan measurements of two-, four-, and six-particle angular correlations in d + Au collisions at √ sNN = 200, 62.4, 39, and 19.6 GeV. We also present measurements of two- and four-particle angular correlations in p + Au collisions at √ sNN = 200 GeV. We find the four-particle cumulant to be real valued for d + Au collisions at all four energies. We also find that the four-particle cumulant in p +more » Au has the opposite sign as that in d + Au. Further, we find that the six-particle cumulant agrees with the four-particle cumulant in d + Au collisions at 200 GeV, indicating that nonflow effects are subdominant. Finally, these observations provide strong evidence that the correlations originate from the initial geometric configuration, which is then translated into the momentum distribution for all particles, commonly referred to as collectivity.« less

  6. Measurements of Multiparticle Correlations in d+Au Collisions at 200, 62.4, 39, and 19.6 GeV and p+Au Collisions at 200 GeV and Implications for Collective Behavior.

    PubMed

    Aidala, C; Akiba, Y; Alfred, M; Andrieux, V; Aoki, K; Apadula, N; Asano, H; Ayuso, C; Azmoun, B; Babintsev, V; Bagoly, A; Bandara, N S; Barish, K N; Bathe, S; Bazilevsky, A; Beaumier, M; Belmont, R; Berdnikov, A; Berdnikov, Y; Blau, D S; Boer, M; Bok, J S; Brooks, M L; Bryslawskyj, J; Bumazhnov, V; Butler, C; Campbell, S; Canoa Roman, V; Cervantes, R; Chi, C Y; Chiu, M; Choi, I J; Choi, J B; Citron, Z; Connors, M; Cronin, N; Csanád, M; Csörgő, T; Danley, T W; Daugherity, M S; David, G; DeBlasio, K; Dehmelt, K; Denisov, A; Deshpande, A; Desmond, E J; Dion, A; Dixit, D; Do, J H; Drees, A; Drees, K A; Dumancic, M; Durham, J M; Durum, A; Elder, T; Enokizono, A; En'yo, H; Esumi, S; Fadem, B; Fan, W; Feege, N; Fields, D E; Finger, M; Finger, M; Fokin, S L; Frantz, J E; Franz, A; Frawley, A D; Fukuda, Y; Gal, C; Gallus, P; Garg, P; Ge, H; Giordano, F; Goto, Y; Grau, N; Greene, S V; Grosse Perdekamp, M; Gunji, T; Guragain, H; Hachiya, T; Haggerty, J S; Hahn, K I; Hamagaki, H; Hamilton, H F; Han, S Y; Hanks, J; Hasegawa, S; Haseler, T O S; He, X; Hemmick, T K; Hill, J C; Hill, K; Hodges, A; Hollis, R S; Homma, K; Hong, B; Hoshino, T; Hotvedt, N; Huang, J; Huang, S; Imai, K; Imrek, J; Inaba, M; Iordanova, A; Isenhower, D; Ito, Y; Ivanishchev, D; Jacak, B V; Jezghani, M; Ji, Z; Jiang, X; Johnson, B M; Jorjadze, V; Jouan, D; Jumper, D S; Kang, J H; Kapukchyan, D; Karthas, S; Kawall, D; Kazantsev, A V; Khachatryan, V; Khanzadeev, A; Kim, C; Kim, D J; Kim, E-J; Kim, M; Kim, M H; Kincses, D; Kistenev, E; Klatsky, J; Kline, P; Koblesky, T; Kotov, D; Kudo, S; Kurita, K; Kwon, Y; Lajoie, J G; Lallow, E O; Lebedev, A; Lee, S; Lee, S H; Leitch, M J; Leung, Y H; Lewis, N A; Li, X; Lim, S H; Liu, L D; Liu, M X; Loggins, V-R; Lökös, S; Lovasz, K; Lynch, D; Majoros, T; Makdisi, Y I; Makek, M; Malaev, M; Manko, V I; Mannel, E; Masuda, H; McCumber, M; McGaughey, P L; McGlinchey, D; McKinney, C; Mendoza, M; Metzger, W J; Mignerey, A C; Mihalik, D E; Milov, A; Mishra, D K; Mitchell, J T; Mitsuka, G; Miyasaka, S; Mizuno, S; Montuenga, P; Moon, T; Morrison, D P; Morrow, S I M; Murakami, T; Murata, J; Nagai, K; Nagashima, K; Nagashima, T; Nagle, J L; Nagy, M I; Nakagawa, I; Nakagomi, H; Nakano, K; Nattrass, C; Niida, T; Nouicer, R; Novák, T; Novitzky, N; Novotny, R; Nyanin, A S; O'Brien, E; Ogilvie, C A; Orjuela Koop, J D; Osborn, J D; Oskarsson, A; Ottino, G J; Ozawa, K; Pantuev, V; Papavassiliou, V; Park, J S; Park, S; Pate, S F; Patel, M; Peng, W; Perepelitsa, D V; Perera, G D N; Peressounko, D Yu; PerezLara, C E; Perry, J; Petti, R; Phipps, M; Pinkenburg, C; Pisani, R P; Pun, A; Purschke, M L; Radzevich, P V; Read, K F; Reynolds, D; Riabov, V; Riabov, Y; Richford, D; Rinn, T; Rolnick, S D; Rosati, M; Rowan, Z; Runchey, J; Safonov, A S; Sakaguchi, T; Sako, H; Samsonov, V; Sarsour, M; Sato, K; Sato, S; Schaefer, B; Schmoll, B K; Sedgwick, K; Seidl, R; Sen, A; Seto, R; Sexton, A; Sharma, D; Shein, I; Shibata, T-A; Shigaki, K; Shimomura, M; Shioya, T; Shukla, P; Sickles, A; Silva, C L; Silvermyr, D; Singh, B K; Singh, C P; Singh, V; Skoby, M J; Slunečka, M; Smith, K L; Snowball, M; Soltz, R A; Sondheim, W E; Sorensen, S P; Sourikova, I V; Stankus, P W; Stoll, S P; Sugitate, T; Sukhanov, A; Sumita, T; Sun, J; Syed, S; Sziklai, J; Takeda, A; Tanida, K; Tannenbaum, M J; Tarafdar, S; Taranenko, A; Tarnai, G; Tieulent, R; Timilsina, A; Todoroki, T; Tomášek, M; Towell, C L; Towell, R S; Tserruya, I; Ueda, Y; Ujvari, B; van Hecke, H W; Vazquez-Carson, S; Velkovska, J; Virius, M; Vrba, V; Vukman, N; Wang, X R; Wang, Z; Watanabe, Y; Watanabe, Y S; Wong, C P; Woody, C L; Xu, C; Xu, Q; Xue, L; Yalcin, S; Yamaguchi, Y L; Yamamoto, H; Yanovich, A; Yin, P; Yoo, J H; Yoon, I; Yu, H; Yushmanov, I E; Zajc, W A; Zelenski, A; Zharko, S; Zou, L

    2018-02-09

    Recently, multiparticle-correlation measurements of relativistic p/d/^{3}He+Au, p+Pb, and even p+p collisions show surprising collective signatures. Here, we present beam-energy-scan measurements of two-, four-, and six-particle angular correlations in d+Au collisions at sqrt[s_{NN}]=200, 62.4, 39, and 19.6 GeV. We also present measurements of two- and four-particle angular correlations in p+Au collisions at sqrt[s_{NN}]=200  GeV. We find the four-particle cumulant to be real valued for d+Au collisions at all four energies. We also find that the four-particle cumulant in p+Au has the opposite sign as that in d+Au. Further, we find that the six-particle cumulant agrees with the four-particle cumulant in d+Au collisions at 200 GeV, indicating that nonflow effects are subdominant. These observations provide strong evidence that the correlations originate from the initial geometric configuration, which is then translated into the momentum distribution for all particles, commonly referred to as collectivity.

  7. Measurements of Multiparticle Correlations in d + Au Collisions at 200, 62.4, 39, and 19.6 GeV and p + Au Collisions at 200 GeV and Implications for Collective Behavior

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aidala, C.; Akiba, Y.; Alfred, M.

    Recently, multiparticle-correlation measurements of relativistic p/d/ 3He + Au, p + Pb, and even p + p collisions show surprising collective signatures. In this paper, we present beam-energy-scan measurements of two-, four-, and six-particle angular correlations in d + Au collisions at √ sNN = 200, 62.4, 39, and 19.6 GeV. We also present measurements of two- and four-particle angular correlations in p + Au collisions at √ sNN = 200 GeV. We find the four-particle cumulant to be real valued for d + Au collisions at all four energies. We also find that the four-particle cumulant in p +more » Au has the opposite sign as that in d + Au. Further, we find that the six-particle cumulant agrees with the four-particle cumulant in d + Au collisions at 200 GeV, indicating that nonflow effects are subdominant. Finally, these observations provide strong evidence that the correlations originate from the initial geometric configuration, which is then translated into the momentum distribution for all particles, commonly referred to as collectivity.« less

  8. Pseudorapidity distributions of charged particles in d + Au and p + p collisions at √sNN = 200 GeV

    NASA Astrophysics Data System (ADS)

    Nouicer, Rachid; the PHOBOS Collaboration; Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L. H.; Wosiek, B.; Wozniak, K.; Wysłouch, B.; Zhang, J.

    2004-08-01

    The measured pseudorapidity distributions of primary charged particles are presented for d+Au and p+p collisions at {\\sqrt{sNN} = {200 GeV} } over a wide pseudorapidity range of |η|<= 5.4. The results for d+Au collisions are presented for minimum-bias events and as a function of collision centrality. The measurements for p+p collisions are shown for minimum-bias events. The ratio of the charged particle multiplicity in d+Au and p+A collisions relative to that for inelastic p+p collisions is found to depend only on langNpartrang, and it is remarkably independent of collision energy and system mass. The deuteron and gold fragmentation regions in d+Au collisions are in good agreement with proton nucleus data at lower energies.

  9. Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

    NASA Astrophysics Data System (ADS)

    Fukuda, Yukio; Otani, Yohei; Toyota, Hiroshi; Ono, Toshiro

    2011-07-01

    We have investigated GeNx/Ge interface properties using Si3N4(7 nm)/GeNx(2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The interface trap density (Dit) measured by the conductance method is found to be distributed symmetrically in the Ge band gap with a minimum Dit value lower than 3 × 1011 cm-2eV-1 near the midgap. This result may lead to the development of processes for the fabrication of p- and n-Ge Schottky-barrier (SB) source/drain metal-insulator-semiconductor field-effect transistors using chemically and thermally robust GeNx dielectrics as interlayers for SB source/drain contacts and high-κ gate dielectrics.

  10. K(892)* resonance production in Au+Au and p+p collisions at {radical}s{sub NN} = 200 GeV at RHIC

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.

    2004-12-09

    The short-lived K(892)* resonance provides an efficient tool to probe properties of the hot and dense medium produced in relativistic heavy-ion collisions. We report measurements of K* in {radical}s{sub NN} = 200 GeV Au+Au and p+p collisions reconstructed via its hadronic decay channels K(892)*{sup 0} {yields} K{pi} and K(892)*{sup +-} {yields} K{sub S}{sup 0}{pi}{sup +-} using the STAR detector at RHIC. The K*{sup 0} mass has been studied as function of p{sub T} in minimum bias p + p and central Au+Au collisions. The K* p{sub T} spectra for minimum bias p + p interactions and for Au+Au collisions inmore » different centralities are presented. The K*/K ratios for all centralities in Au+Au collisions are found to be significantly lower than the ratio in minimum bias p + p collisions, indicating the importance of hadronic interactions between chemical and kinetic freeze-outs. The nuclear modification factor of K* at intermediate p{sub T} is similar to that of K{sub S}{sup 0}, but different from {Lambda}. This establishes a baryon-meson effect over a mass effect in the particle production at intermediate p{sub T} (2 < p{sub T} {le} 4 GeV/c). A significant non-zero K*{sup 0} elliptic flow (v{sub 2}) is observed in Au+Au collisions and compared to the K{sub S}{sup 0} and {Lambda} v{sub 2}.« less

  11. Measurement of K 0 S and K *0 in p+p, d+Au, and Cu+Cu collisions at sqrt S NN = 200 GeV

    DOE PAGES

    Adare, A.; Aidala, C.

    2014-11-01

    The PHENIX experiment at the Relativistic Heavy Ion Collider has performed a systematic study of K 0 S and K *0 meson production at midrapidity in p+p, d+Au, and Cu+Cu collisions at sqrt S NN = 200 GeV. The K 0 S and K *0 mesons are reconstructed via their K 0 S and π 0(→γγ)π 0 (→γγ) and K *0 → K ± π ± decay modes, respectively. The measured transverse-momentum spectra are used to determine the nuclear modification factor of K 0 S and K *0 mesons in d+Au and Cu+Cu collisions at different centralities. In the d+Aumore » collisions, the nuclear modification factor of K 0 S and K *0 mesons is almost constant as a function of transverse momentum and is consistent with unity showing that cold-nuclear-matter effects do not play a significant role in the measured kinematic range. In Cu+Cu collisions, within the uncertainties no nuclear modification is registered in peripheral collisions. In central collisions, both mesons show suppression relative to the expectations from the p+p yield scaled by the number of binary nucleon-nucleon collisions in the Cu+Cu system. In the p T range 2–5 GeV/c, the strange mesons ( K 0 S, K *0) similarly to the Φ meson with hidden strangeness, show an intermediate suppression between the more suppressed light quark mesons (π 0) and the nonsuppressed baryons (p, p-bar). At higher transverse momentum, p T > 5 GeV/c, production of all particles is similarly suppressed by a factor of ≈2. (auth)« less

  12. Raman spectroscopy and atomic force microscopy study of interfacial polytypism in GaP/Ge(111) heterostructures

    NASA Astrophysics Data System (ADS)

    Aggarwal, R.; Ingale, Alka A.; Dixit, V. K.

    2018-01-01

    Effects of lattice and polar/nonpolar mismatch between the GaP layer and Ge(111) substrate are investigated by spatially resolved Raman spectroscopy. The red shifted transverse optical (TO) and longitudinal optical (LO) phonons due to residual strain, along with asymmetry to TO phonon ∼358 cm-1 are observed in GaP/Ge(111). The peak intensity variation of mode ∼358 cm-1 with respect to TO phonon across the crystallographic morphed surface of GaP micro structures is associated with the topographical variations using atomic force microscopy mapping and Raman spectroscopy performed on both in plane and cross-sectional surface. Co-existence of GaP allotropes, i.e. wurtzite phase near heterojunction interface and dominant zinc-blende phase near surface is established using the spatially resolved polarized Raman spectroscopy from the cross sectional surface of heterostructures. This consistently explains effect of surface morphology on Raman spectroscopy from GaP(111). The study shows the way to identify crystalline phases in other advanced semiconductor heterostructures without any specific sample preparation.

  13. Measurements of $$\\pi ^\\pm $$ π ± , K $$^\\pm $$ ± , p and $${\\bar{\\text {p}}}$$ p ¯ spectra in proton-proton interactions at 20, 31, 40, 80 and 158  $$\\text{ GeV }/c$$ GeV / c with the NA61/SHINE spectrometer at the CERN SPS: The NA61/SHINE Collaboration

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aduszkiewicz, A.; Ali, Y.; Andronov, E.

    Measurements of inclusive spectra and mean multiplicities ofmore » $$\\pi^\\pm$$, K$$^\\pm$$, p and $$\\bar{\\textrm{p}}$$ produced in inelastic p+p interactions at incident projectile momenta of 20, 31, 40, 80 and 158 GeV/c ($$\\sqrt{s} = $$ 6.3, 7.7, 8.8, 12.3 and 17.3 GeV, respectively) were performed at the CERN Super Proton Synchrotron using the large acceptance NA61/SHINE hadron spectrometer. Spectra are presented as function of rapidity and transverse momentum and are compared to predictions of current models. The measurements serve as the baseline in the NA61/SHINE study of the properties of the onset of deconfinement and search for the critical point of strongly interacting matter.« less

  14. Λ0 Polarization in pp → pΛ0K+(π+π-)5 at 27.5 GeV

    NASA Astrophysics Data System (ADS)

    Félix, J.; Christian, D. C.; Church, M. D.; Forbush, M.; Gottschalk, E. E.; Gutierrez, G.; Hartouni, E. P.; Holmes, S. D.; Huson, F. R.; Jensen, D. A.; Knapp, B. C.; Kreisler, M. N.; Uribe, J.; Stern, B. J.; Wang, M. H. L. S.; Wehmann, A.; Wiencke, L. R.; White, J. T.

    The polarization of 1973 Λ0's from the specific reaction pp → pΛ0K+(π+π-)5 created from 27.5 GeV incident protons on a liquid Hydrogen target, as function of xF, PT, and MΛ0K+, is, inside statistics, consistent with the polarization of Λ0's from pp → pfastΛ0K+ at 800 GeV.

  15. Thermoelectric properties of hot pressed p-type SiGe alloys

    NASA Technical Reports Server (NTRS)

    Bajgar, Clara; Masters, Richard; Scoville, Nancy; Vandersande, Jan

    1991-01-01

    This paper presents the results of measurements of electrical resistivity, Seebeck coefficient, thermal conductivity, as well as Hall carrier concentration, and mobility, for hot pressed SiGe 80 at. pct Si-20 at. pct Ge (SiGe) thermoelectric materials containing 0.24-3.0 at. pct boron. The carrier concentration was varied by annealing and quenching at different high temperatures. Figure-of-merit, Z, was found to be 0.60 +/- 0.03 x 10 exp -3/K over a carrier concentration range from 1.8- 3.5 x 10 exp -20/cu cm. This result is very encouraging from a production standpoint, since the dopant concentration is not critical.

  16. Comparative studies of Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

    NASA Astrophysics Data System (ADS)

    Hu, Ai-Bin; Xu, Qiu-Xia

    2010-05-01

    Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance-voltage curve hysteresis of Ge metal-oxide-semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO2 (1 < x < 2). Effective hole mobilities of Ge and Si transistors are extracted by using a channel conductance method. The peak hole mobilities of Si and Ge transistors are 33.4 cm2/(V · s) and 81.0 cm2/(V · s), respectively. Ge transistor has a hole mobility 2.4 times higher than that of Si control sample.

  17. Meilensteine in der Erforschung der kompakten Objekte

    NASA Astrophysics Data System (ADS)

    Camenzind, Max

    Kompakte Objekte besitzen zum einen eine sehr hohe Dichte, und zum anderen sind sie durch die Tatsache charakterisiert, dass keine nuklearen Reaktionen mehr in ihrem Inneren stattfinden können. Aus diesem Grund können sie im Unterschied zu gewöhnlichen Sternen der Gravitation nicht mehr mit dem Druck des thermischen Gases widerstehen. In den Weißen Zwergen bzw. Neutronensternen wird der Gravitation der Quantendruck eines Elektronengases bzw. einer Neutronenflüssigkeit entgegengesetzt. Ein solches Gas besteht aus Elektronen bzw. Neutronen, die auf ihr niedrigstes Energieniveau zusammengepresst wurden. Durch die daraus resultierende hohe Bewegungsenergie der Fermionen wird der sogenannte Quantendruck erzeugt.

  18. The Allergen Der p3 from House Dust Mite Stimulates Store-Operated Ca2+ Channels and Mast Cell Migration through PAR4 Receptors.

    PubMed

    Lin, Yu-Ping; Nelson, Charmaine; Kramer, Holger; Parekh, Anant B

    2018-04-19

    The house dust mite is the principal source of perennial aeroallergens in man. How these allergens activate innate and adaptive immunity is unclear, and therefore, there are no therapies targeting mite allergens. Here, we show that house dust mite extract activates store-operated Ca 2+ channels, a common signaling module in numerous cell types in the lung. Activation of channel pore-forming Orai1 subunits by mite extract requires gating by STIM1 proteins. Although mite extract stimulates both protease-activated receptor type 2 (PAR2) and PAR4 receptors, Ca 2+ influx is more tightly coupled to the PAR4 pathway. We identify a major role for the serine protease allergen Der p3 in stimulating Orai1 channels and show that a therapy involving sub-maximal inhibition of both Der p3 and Orai1 channels suppresses mast cell activation to house dust mite. Our results reveal Der p3 as an important aeroallergen that activates Ca 2+ channels and suggest a therapeutic strategy for treating mite-induced asthma. Copyright © 2018 Elsevier Inc. All rights reserved.

  19. Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

    PubMed

    Huang, Zhong-Mei; Huang, Wei-Qi; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke

    2016-12-01

    It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.

  20. Umsetzung der Unternehmensstrategie mit der Balanced Scorecard

    NASA Astrophysics Data System (ADS)

    Crespo, Isabel; Bergmann, Lars; Portmann, Stefan; Lacker, Thomas; Lacker, Michael; Fleischmann, Jürgen; Kozó, Hans

    Die Balanced Scorecard (BSC) ist ein Ansatz zum strategischen Management, der neben der Ausrichtung des Unternehmens auf finanzielle Zielwerte ebenso großes Gewicht auf so genannte weiche Faktoren legt, die den wirtschaftlichen Erfolg eines Unternehmens erst ermöglichen. Das entscheidende Merkmal der Balanced Scorecard ist dabei, dass sie ein ausgewogenes System strategischer Ziele herstellt, welches das Unternehmen hinsichtlich der vier Perspektiven Finanzen, Kunden, interne Prozesse und Mitarbeiter und Potenziale strategisch ausrichtet (Kaplan u. Norton 1997).

  1. Laser induced optical bleaching in Ge{sub 12}Sb{sub 25}S{sub 63} chalcogenide thin film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Naik, Ramakanta, E-mail: ramakanta.naik@gmail.com; Jena, S.; Sahoo, N. K.

    2015-06-24

    Photo induced effects of Ge{sub 12}Sb{sub 25}S{sub 63} films illuminated with 532 nm laser light is investigated from transmission spectra measured by FTIR spectroscopy. The material exhibit photo bleaching (PB) when exposed to band gap laser for a prolonged time in vacuum. The PB is ascribed to structural changes inside the film as well as surface photo oxidation. The amorphous nature of thin films was detected by X-ray diffraction. The chemical composition of the deposited thin films was examined by Energy Dispersive X-ray Analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on inverse synthesismore » method, and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple–DiDomenico model. It was found that, the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman spectra analysis also supports the optical changes.« less

  2. 808nm high-power high-efficiency GaAsP/GaInP laser bars

    NASA Astrophysics Data System (ADS)

    Wang, Ye; Yang, Ye; Qin, Li; Wang, Chao; Yao, Di; Liu, Yun; Wang, Lijun

    2008-11-01

    808nm high power diode lasers, which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems, have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers, and they could lead to new applications where space, weight and electrical power are critical. High efficiency devices generate less waste heat, which means less strain on the cooling system and more tolerance to thermal conductivity variation, a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GaInP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200μs, 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars, we fabricate a 1x3 arrays, the maximum power is 64.3W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A, the slope efficiency is 3.37 W/A.

  3. Phase stability of iron germanate, FeGeO 3, to 127 GPa

    DOE PAGES

    Dutta, R.; Tracy, S. J.; Stan, C. V.; ...

    2017-11-15

    The high-pressure behavior of germanates is of interest as these compounds serve as analogs for silicates of the deep Earth. Current theoretical and experimental studies of iron germanate, FeGeO 3, are limited. Here in this paper, we have examined the behavior of FeGeO 3 to 127 GPa using the laser-heated diamond anvil cell combined with in situ synchrotron X-ray diffraction. Upon compression at room temperature, the ambient-pressure clinopyroxene phase transforms to a disordered triclinic phase [FeGeO 3 (II)] at ~ 18 GPa in agreement with earlier studies. An additional phase transition to FeGeO 3 (III) occurs above 54 GPa atmore » room temperature. Laser-heating experiments (~ 1200–2200 K) were conducted at three pressures (33, 54, and 123 GPa) chosen to cover the stability regions of different GeO 2 polymorphs. In all cases, we observe that FeGeO 3 dissociates into GeO 2 + FeO at high pressure and temperature conditions. Neither the perovskite nor the post-perovskite phase was observed up to 127 GPa at ambient or high temperatures. The results are consistent with the behavior of FeSiO 3, which also dissociates into a mixture of the oxides (FeO + SiO 2) at least up to 149 GPa.« less

  4. Heavy Ion Current Transients in SiGe HBTs

    NASA Technical Reports Server (NTRS)

    Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.; hide

    2009-01-01

    Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

  5. Tetravalent chromium doped laser materials and NIR tunable lasers

    NASA Technical Reports Server (NTRS)

    Alfano, Robert R. (Inventor); Petricevic, Vladimir (Inventor); Bykov, Alexey (Inventor)

    2008-01-01

    A method is described to improve and produce purer Cr.sup.4+-doped laser materials and lasers with reduced co-incorporation of chromium in any other valence states, such as Cr.sup.3+, Cr.sup.2+, Cr.sup.5+, and Cr.sup.6+. The method includes: 1) certain crystals of olivine structure with large cation (Ca) in octahedral sites such as Cr.sup.4+:Ca.sub.2GeO.sub.4, Cr.sup.4+:Ca.sub.2SiO.sub.4, Cr.sup.4+:Ca.sub.2Ge.sub.xSi.sub.1-xO.sub.4 (where 0laser materials are characterized by a relatively high concentration of Cr.sup.4+-lasing ion in crystalline host that makes these materials suitable for compact high power (thin disk/wedge) NIR laser applications.

  6. Ion beam modification of structural and optical properties of GeO2 thin films deposited at various substrate temperatures using pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Rathore, Mahendra Singh; Vinod, Arun; Angalakurthi, Rambabu; Pathak, A. P.; Singh, Fouran; Thatikonda, Santhosh Kumar; Nelamarri, Srinivasa Rao

    2017-11-01

    High energy heavy ion irradiation-induced modification of high quality crystalline GeO2 thin films grown at different substrate temperatures ranging from 100 to 500 °C using pulsed laser deposition has been investigated. The pristine films were irradiated with 100 MeV Ag7+ ions at fixed fluence of 1 × 1013 ions/cm2. These pristine and irradiated films have been characterized using X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared and photoluminescence spectroscopy. The XRD and Raman results of pristine films confirm the formation of hexagonal structure of GeO2 films, whereas the irradiation eliminates all the peaks except major GeO2 peak of (101) plane. It is evident from the XRD results that crystallite size changes with substrate temperature and SHI irradiation. The surface morphology of films was studied by AFM. The functional group of pristine and irradiated films was investigated by IR transmission spectra. Pristine films exhibited strong photoluminescence around 342 and 470 nm due to oxygen defects and a red shift in the PL bands is observed after irradiation. Possible mechanism of tuning structural and optical properties of pristine as well as irradiated GeO2 films with substrate temperature and ion beam irradiation has been reported in detail.

  7. Laser Spectroscopy Characterization of Materials for Frequency Agile Solid State Laser Systems

    DTIC Science & Technology

    1991-03-15

    Lasing Properties of Nd3+:Ba2 ZnGe 2O 7 III. SPECTROSCOPIC PROPERTIES OF CHROMIUM -DOPED LASER CRYSTALS III.1 Laser-Induced Grating Spectroscopy of...rare earth- and chromium -doped Iasor crystals, rare earth-doped glasses, and potassium niobate. Ilas or- spectroscopy techniques were used to...being investigated: rare ea’-Lh-doped laser crystals; chromium -doped laser crystals; and photorefractive crystals and glasses. The important results

  8. The magnetic phase transition in Mn{sub 1.1}Fe{sub 0.9}P{sub 1−x}Ge{sub x} magnetocaloric alloys

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chen, X.; Ramanujan, R. V., E-mail: ramanujan@ntu.edu.sg

    Mn-Fe-P-Ge alloys are promising, low cost, high performance candidates for magnetic cooling applications based on the magnetocaloric effect. These alloys undergo a magnetic phase transition which induces a large entropy change (ΔS). Experimental and modeling studies were conducted to study this transition for varying Ge content. Landau theory and the Bean-Rodbell model were applied to Mn{sub 1.1}Fe{sub 0.9}P{sub 1−x}Ge{sub x} (x = 0.26, 0.3, and 0.32) melt spun ribbons to model the phase transition and the associated entropy change. The critical behavior of these alloys was studied. The critical composition range at which the cross over from first order to second ordermore » magnetic transition occurs was determined. The calculated thermodynamic values and critical temperatures were in good agreement with our experimental results. A high maximum entropy change (ΔS) of ∼44.9 J kg{sup −1} K{sup −1} was observed in Mn{sub 1.1}Fe{sub 0.9}P{sub 0.74}Ge{sub 0.26} in a 5 T applied magnetic field. The results suggest that Mn-Fe-P-Ge alloys are very attractive materials for near room temperature magnetic cooling.« less

  9. {phi} meson production in Au + Au and p + p collisions at {radical}s{sub NN}=200 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adams, J.; Adler, C.; Aggarwal, M.M.

    2004-06-01

    We report the STAR measurement of {psi} meson production in Au + Au and p + p collisions at {radical}s{sub NN} = 200 GeV. Using the event mixing technique, the {psi} spectra and yields are obtained at midrapidity for five centrality bins in Au+Au collisions and for non-singly-diffractive p+p collisions. It is found that the {psi} transverse momentum distributions from Au+Au collisions are better fitted with a single-exponential while the p+p spectrum is better described by a double-exponential distribution. The measured nuclear modification factors indicate that {psi} production in central Au+Au collisions is suppressed relative to peripheral collisions when scaledmore » by the number of binary collisions (). The systematics of <p{sub T}> versus centrality and the constant {psi}/K{sup -} ratio versus beam species, centrality, and collision energy rule out kaon coalescence as the dominant mechanism for {psi} production.« less

  10. Visible GaAs/0.7/P/0.3/ CW heterojunction lasers

    NASA Technical Reports Server (NTRS)

    Kressel, H.; Olsen, G. H.; Nuese, C. J.

    1977-01-01

    The paper reports the first low-threshold red-light-emitting heterojunction laser diodes consisting of lattice-matched Ga(As,P)/(In,Ga)P heteroepitaxial layers. A room-temperature threshold current of 3400 A/sq cm was obtained at a wavelength of about 7000 A; this value is substantially lower than those achieved at this wavelength with (Al,Ga)As lasers. For the first time, continuous-wave laser operation at temperatures as high as 10 C has been obtained for GaAs(1-x)P(x).

  11. Single-pulse picking at kHz repetition rates using a Ge plasma switch at the free-electron laser FELBE.

    PubMed

    Schmidt, J; Winnerl, S; Seidel, W; Bauer, C; Gensch, M; Schneider, H; Helm, M

    2015-06-01

    We demonstrate a system for picking of mid-infrared and terahertz (THz) radiation pulses from the free-electron laser (FEL) FELBE operating at a repetition rate of 13 MHz. Single pulses are reflected by a dense electron-hole plasma in a Ge slab that is photoexcited by amplified near-infrared (NIR) laser systems operating at repetition rates of 1 kHz and 100 kHz, respectively. The peak intensity of picked pulses is up to 400 times larger than the peak intensity of residual pulses. The required NIR fluence for picking pulses at wavelengths in the range from 5 μm to 30 μm is discussed. In addition, we show that the reflectivity of the plasma decays on a time scale from 100 ps to 1 ns dependent on the wavelengths of the FEL and the NIR laser. The plasma switch enables experiments with the FEL that require high peak power but lower average power. Furthermore, the system is well suited to investigate processes with decay times in the μs to ms regime, i.e., much longer than the 77 ns long pulse repetition period of FELBE.

  12. Single-pulse picking at kHz repetition rates using a Ge plasma switch at the free-electron laser FELBE

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schmidt, J., E-mail: j.schmidt@hzdr.de; Helm, M.; Technische Universität Dresden, 01062 Dresden

    2015-06-15

    We demonstrate a system for picking of mid-infrared and terahertz (THz) radiation pulses from the free-electron laser (FEL) FELBE operating at a repetition rate of 13 MHz. Single pulses are reflected by a dense electron-hole plasma in a Ge slab that is photoexcited by amplified near-infrared (NIR) laser systems operating at repetition rates of 1 kHz and 100 kHz, respectively. The peak intensity of picked pulses is up to 400 times larger than the peak intensity of residual pulses. The required NIR fluence for picking pulses at wavelengths in the range from 5 μm to 30 μm is discussed. Inmore » addition, we show that the reflectivity of the plasma decays on a time scale from 100 ps to 1 ns dependent on the wavelengths of the FEL and the NIR laser. The plasma switch enables experiments with the FEL that require high peak power but lower average power. Furthermore, the system is well suited to investigate processes with decay times in the μs to ms regime, i.e., much longer than the 77 ns long pulse repetition period of FELBE.« less

  13. Monocyte-derived dendritic cells exposed to Der p 1 allergen enhance the recruitment of Th2 cells: major involvement of the chemokines TARC/CCL17 and MDC/CCL22.

    PubMed

    Hammad, Hamida; Smits, Hermelijn H; Ratajczak, Céline; Nithiananthan, Asokananthan; Wierenga, Eddy A; Stewart, Geoffrey A; Jacquet, Alain; Tonnel, Andre-Bernard; Pestel, Joël

    2003-01-01

    Dendritic cells (DC) are potent antigen - presenting cells that can orientate the immune response towards a Th1 or a Th2 type. DC produce chemokines that are involved in the recruitment of either Th1 cells, such as IP10 (CXCL10), Th2 cells such as TARC (CCL17) and MDC (CCL22), or non-polarized T cells such as RANTES (CCL5) and MIP-lalpha (CCL3). We investigated whether monocyte-derived DC (MD-DC) generated from healthy donors or from patients sensitive to Dermatophagoides pteronyssinus (Dpt) and exposed to the cysteine-protease Der p 1(allergen of Dpt), could upregulate the expression of chemokines involved in type 1 or type 2 T cell recruitment. MD-DC were pulsed with either Der p 1 or with LPS as the control and the chemokines produced were evaluated using ELISA and chemotaxis assays. Der p 1-pulsed DC from allergic patients showed increased TARC (CCL17) and MDC (CCL22) production without modifying IP-10 (CXCL10) release. Der p 1-pulsed DC from healthy donors showed only increased IP-10 (CXCL10) secretion. RANTES (CCL5) and MIP-lalpha (CCL3) production were similarly increased when DC were from healthy or allergic donors. The selective Th2 clone recruitment activity of supernatants from Der p 1-pulsed DC of allergic patients was inhibited by anti-TARC (CCL17) and anti-MDC (CCL22) neutralizing Abs. By using anti-IP10 (CXCL10) blocking Abs, supernatants of Der p 1-pulsed DC from healthy donors were shown to be involved in the recruitment of Th1 cells. These results suggest that in allergic patients exposed to house dust mites, DC may favour the exacerbation of the Th2 response via the increase in type 2 chemokine production. Copyright John Libbey Eurotext 2003.

  14. Cr.sup.3+-doped laser materials and lasers and methods of making and using

    NASA Technical Reports Server (NTRS)

    Alfano, Robert R. (Inventor); Bykov, Alexey (Inventor); Petricevic, Vladimir (Inventor); Sharonov, Mikhail (Inventor)

    2008-01-01

    A laser medium includes a single crystal of chromium-doped LiSc.sub.l-xIn.sub.xGe.sub.1-ySi.sub.yO.sub.4, where 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1. Preferably, x and y are not both 0. A laser, such as a tunable near infrared laser, can contain the laser medium.

  15. Strong anisotropy and magnetostriction in the two-dimensional Stoner ferromagnet Fe 3 GeTe 2

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhuang, Houlong L.; Kent, P. R. C.; Hennig, Richard G.

    Comore » mputationally characterizing magnetic properies of novel two-dimensional (2D) materials serves as an important first step of exploring possible applications. Using density-functional theory, we show that single-layer Fe 3 GeTe 2 is a potential 2D material with sufficiently low formation energy to be synthesized by mechanical exfoliation from the bulk phase with a van der Waals layered structure. In addition, we calculated the phonon dispersion demonstrating that single-layer Fe 3 GeTe 2 is dynamically stable. Furthermore, we find that similar to the bulk phase, 2D Fe 3 GeTe 2 exhibits amagnetic moment that originates from a Stoner instability. In contrast to other 2D materials, we find that single-layer Fe 3 GeTe 2 exhibits a significant uniaxial magnetocrystalline anisotropy energy of 920μ eV per Fe atom originating from spin-orbit coupling. In conclusion, we show that applying biaxial tensile strains enhances the anisotropy energy, which reveals strong magnetostriction in single-layer Fe 3 GeTe 2 with a sizable magneostrictive coefficient. Our results indicate that single-layer Fe 3 GeTe 2 is potentially useful for magnetic storage applications.« less

  16. Strong anisotropy and magnetostriction in the two-dimensional Stoner ferromagnet Fe 3 GeTe 2

    DOE PAGES

    Zhuang, Houlong L.; Kent, P. R. C.; Hennig, Richard G.

    2016-04-06

    Comore » mputationally characterizing magnetic properies of novel two-dimensional (2D) materials serves as an important first step of exploring possible applications. Using density-functional theory, we show that single-layer Fe 3 GeTe 2 is a potential 2D material with sufficiently low formation energy to be synthesized by mechanical exfoliation from the bulk phase with a van der Waals layered structure. In addition, we calculated the phonon dispersion demonstrating that single-layer Fe 3 GeTe 2 is dynamically stable. Furthermore, we find that similar to the bulk phase, 2D Fe 3 GeTe 2 exhibits amagnetic moment that originates from a Stoner instability. In contrast to other 2D materials, we find that single-layer Fe 3 GeTe 2 exhibits a significant uniaxial magnetocrystalline anisotropy energy of 920μ eV per Fe atom originating from spin-orbit coupling. In conclusion, we show that applying biaxial tensile strains enhances the anisotropy energy, which reveals strong magnetostriction in single-layer Fe 3 GeTe 2 with a sizable magneostrictive coefficient. Our results indicate that single-layer Fe 3 GeTe 2 is potentially useful for magnetic storage applications.« less

  17. Generating multi-GeV electron bunches using single stage laser wakefield acceleration in a 3D nonlinear regime

    NASA Astrophysics Data System (ADS)

    Lu, W.; Tzoufras, M.; Joshi, C.; Tsung, F. S.; Mori, W. B.; Vieira, J.; Fonseca, R. A.; Silva, L. O.

    2007-06-01

    The extraordinary ability of space-charge waves in plasmas to accelerate charged particles at gradients that are orders of magnitude greater than in current accelerators has been well documented. We develop a phenomenological framework for laser wakefield acceleration (LWFA) in the 3D nonlinear regime, in which the plasma electrons are expelled by the radiation pressure of a short pulse laser, leading to nearly complete blowout. Our theory provides a recipe for designing a LWFA for given laser and plasma parameters and estimates the number and the energy of the accelerated electrons whether self-injected or externally injected. These formulas apply for self-guided as well as externally guided pulses (e.g. by plasma channels). We demonstrate our results by presenting a sample particle-in-cell (PIC) simulation of a 30fs, 200 TW laser interacting with a 0.75 cm long plasma with density 1.5×1018cm-3 to produce an ultrashort (10 fs) monoenergetic bunch of self-injected electrons at 1.5 GeV with 0.3 nC of charge. For future higher-energy accelerator applications, we propose a parameter space, which is distinct from that described by Gordienko and Pukhov [Phys. Plasmas 12, 043109 (2005)PHPAEN1070-664X10.1063/1.1884126] in that it involves lower plasma densities and wider spot sizes while keeping the intensity relatively constant. We find that this helps increase the output electron beam energy while keeping the efficiency high.

  18. Reaction. pi. /sup -/p. --> pi. /sup -/. pi. /sup +/. pi. /sup -/p at 8 GeV/c

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kitagaki, T.; Tanaka, S.; Yuta, H.

    1982-10-01

    Results from a high-statistics experiment involving an exposure of the SLAC 82-in. hydrogen bubble chamber to a beam of 8-GeV/c ..pi../sup -/ yielding a final state of ..pi../sup -/..pi../sup +/..pi../sup -/p are presented. Copious production of rho, ..delta../sup + +/, and f is found. Considerable quasi-two-body production in which one particle decays to one of the above resonances is also observed. Some double-resonance production involving baryon and meson resonances is also seen. The production properties of rho, ..delta../sup + +/, and f mesons are well described by a double-Regge model.

  19. Phonons in self-assembled Ge/Si structures

    NASA Astrophysics Data System (ADS)

    Milekhin, A. G.; Nikiforov, A. I.; Pchelyakov, O. P.; Schulze, S.; Zahn, D. R. T.

    2002-03-01

    We present the results of an investigation dealing with fundamental vibrations in periodical Ge/Si structures with small-size Ge quantum dots (QDs) performed using macro- and micro-Raman spectroscopy under resonant and off-resonant conditions. Samples with different number of repetition of Ge and Si layers contain Ge QDs with an average dot base size of 15 nm and a QD height of 2 nm. Periodic oscillations observed in the low-frequency region of the Raman spectra are assigned to folded LA phonons in the Ge QD superlattices. The measured phonon frequencies are in a good agreement with those calculated using the Rytov model. These oscillations are superimposed with a broad continuous emission originating from the whole acoustic dispersion branch due to a breaking up of translational invariance. The Raman spectra of the structure with single Ge QD layer reveal a series of peaks corresponding to LA phonons localized in the Si layer. Using the measured phonon frequencies and corresponding wave vectors the dispersion of the LA phonons in the Si is obtained. The longitudinal-acoustic wave velocity determined from the dispersion is 8365 ms-1 and in excellent agreement with that derived from the Brillouin study. In the optical phonon range, the LO and TO phonons localized in Ge QDs are observed. The position of the LO Ge phonons shifts downwards with increasing excitation energy (from 2.5 to 2.7 eV) indicating the presence of a QD size distribution in Ge dot superlattices. Raman scattering from Ge QDs is size-selectively enhanced by the resonance of the exciting laser energy and the confined excitonic states.

  20. Measurements of J/ψ Production and Polarization in p+p and p+Au Collisions at s NN = 200 GeV with the STAR Experiment

    NASA Astrophysics Data System (ADS)

    Liu, Zhen

    We present the measurements of J/ψ production at mid-rapidity via the di-muon decay channel in p+p and p+Au collisions at s NN = 200 GeV by the STAR experiment at RHIC. In p+p collisions, the measured inclusive J/ψ cross section can be qualitatively described by model calculations. The J/ψ polarization parameters, λ𝜃, λϕ as well as the frame-invariant quantity λinv, are presented as a function of transverse momentum in both the helicity and Collins-Soper frames. No significant polarization is observed. In addition, the nuclear modification factor for inclusive J/ψ in p+Au collisions is similar to that measured in d+Au collisions and favors an additional nuclear absorption effect on top of the nuclear PDF effect.

  1. Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Toko, Kaoru; Suemasu, Takashi

    2017-05-01

    We grew BaSi2 films on Ge(111) substrates by various growth methods based on molecular beam epitaxy (MBE). First, we attempted to form BaSi2 films directly on Ge(111) by MBE without templates. We next formed BaSi2 films using BaGe2 templates as commonly used for MBE growth of BaSi2 on Si substrates. Contrary to our prediction, the lateral growth of BaSi2 was not promoted by these two methods; BaSi2 formed not into a continuous film but into islands. Although streaky patterns of reflection high-energy electron diffraction were observed inside the growth chamber, no X-ray diffraction lines of BaSi2 were observed in samples taken out from the growth chamber. Such BaSi2 islands were easily to get oxidized. We finally attempted to form a continuous BaSi2 template layer on Ge(111) by solid phase epitaxy, that is, the deposition of amorphous Ba-Si layers onto MBE-grown BaSi2 epitaxial islands, followed by post annealing. We achieved the formation of an approximately 5-nm-thick BaSi2 continuous layer by this method. Using this BaSi2 layer as a template, we succeeded in forming a-axis-oriented 520-nm-thick BaSi2 epitaxial films on Ge substrates, although (111)-oriented Si grains were included in the grown layer. We next formed a B-doped p-BaSi2(20 nm)/n-Ge(111) heterojunction solar cell. A wide-spectrum response from 400 to 2000 nm was achieved. At an external bias voltage of 1 V, the external quantum efficiency reached as high as 60%, demonstrating the great potential of BaSi2/Ge combination. However, the efficiency of a solar cell under AM1.5 illumination was quite low (0.1%). The origin of such a low efficiency was examined.

  2. Study of LPE methods for growth of InGaAsP/InP CW lasers

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Hawrylo, F. Z.; Smith, R. T.; Levin, E. R.

    1980-01-01

    Two methods for liquid phase growth of InGaAsP/InP lasers were studied. Single phase growth, based on saturated melts and 5 C supercooling, was compared to two phase growth excess InP and 20 C nominal supercooling. Substrates cut on the (100) plane were used, and morphology in both cases was excellent and comparable to that obtainable in AlGaAs materials. A high degree of reproducibility was obtained in the materials grown by the two phased method, which is therefore presently preferred for the preparation of laser material. A refractive index step of 0.28 and an index n = 3.46 were obtained for In.81Ga.19As,5P5 lasing at 1.3 microns. Oxide-stripe lasers with typical room temperature cw threshold currents of 180 mA were obtained and some of them showed single mode behavior without lateral cavity modifications. COntinuous operation of 800 h at room temperature was obtained without noticeable degradation.

  3. Relativistically Induced Transparency Acceleration (RITA) - laser-plasma accelerated quasi-monoenergetic GeV ion-beams with existing lasers?

    NASA Astrophysics Data System (ADS)

    Sahai, Aakash A.

    2013-10-01

    Laser-plasma ion accelerators have the potential to produce beams with unprecedented characteristics of ultra-short bunch lengths (100s of fs) and high bunch-charge (1010 particles) over acceleration length of about 100 microns. However, creating and controlling mono-energetic bunches while accelerating to high-energies has been a challenge. If high-energy mono-energetic beams can be demonstrated with minimal post-processing, laser (ω0)-plasma (ωpe) ion accelerators may be used in a wide-range of applications such as cancer hadron-therapy, medical isotope production, neutron generation, radiography and high-energy density science. Here we demonstrate using analysis and simulations that using relativistic intensity laser-pulses and heavy-ion (Mi ×me) targets doped with a proton (or light-ion) species (mp ×me) of trace density (at least an order of magnitude below the cold critical density) we can scale up the energy of quasi-mono-energetically accelerated proton (or light-ion) beams while controlling their energy, charge and energy spectrum. This is achieved by controlling the laser propagation into an overdense (ω0 <ωpeγ = 1) increasing plasma density gradient by incrementally inducing relativistic electron quiver and thereby rendering them transparent to the laser while the heavy-ions are immobile. Ions do not directly interact with ultra-short laser that is much shorter in duration than their characteristic time-scale (τp <<√{mp} /ω0 <<√{Mi} /ω0). For a rising laser intensity envelope, increasing relativistic quiver controls laser propagation beyond the cold critical density. For increasing plasma density (ωpe2 (x)), laser penetrates into higher density and is shielded, stopped and reflected where ωpe2 (x) / γ (x , t) =ω02 . In addition to the laser quivering the electrons, it also ponderomotively drives (Fp 1/γ∇za2) them forward longitudinally, creating a constriction of snowplowed e-s. The resulting longitudinal e--displacement from

  4. Photoluminescence of phosphorus atomic layer doped Ge grown on Si

    NASA Astrophysics Data System (ADS)

    Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

    2017-10-01

    Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

  5. Phosphorus atomic layer doping in Ge using RPCVD

    NASA Astrophysics Data System (ADS)

    Yamamoto, Yuji; Kurps, Rainer; Mai, Christian; Costina, Ioan; Murota, Junichi; Tillack, Bernd

    2013-05-01

    Phosphorus atomic layer doping (P-ALD) in Ge is investigated at temperatures between 100 °C and 400 °C using a single wafer reduced pressure chemical vapor deposition (RPCVD) system. Hydrogen-terminated and hydrogen-free Ge (1 0 0) surfaces are exposed to PH3 at different PH3 partial pressures after interrupting Ge growth. The adsorption and reaction of PH3 proceed on a hydrogen-free Ge surface. For all temperatures and PH3 partial pressures used for the P-ALD, the P dose increased with increasing PH3 exposure time and saturated. The saturation value of the incorporated P dose at 300 °C is ˜1.5 × 1014 cm-3, which is close to a quarter of a monolayer of the Ge (1 0 0) surface. The P dose could be simulated assuming a Langmuir-type kinetics model with a saturation value of Nt = 1.55 × 1014 cm-2 (a quarter of a monolayer), reaction rate constant kr = 77 s-1 and thermal equilibrium constant K = 3.0 × 10-2 Pa-1. An electrically active P concentration of 5-6 × 1019 cm-3, which is a 5-6 times higher thermal solubility of P in Ge, is obtained by multiple P spike fabrication using the P-ALD process.

  6. InGaAsP/InP buried-heterostructure lasers /lambda = 1.5 microns/ with chemically etched mirrors

    NASA Astrophysics Data System (ADS)

    Adachi, S.; Kawaguchi, H.; Takahei, K.; Noguchi, Y.

    1981-09-01

    The monolithic fabrication of buried heterostructure InGaAsP/InP lasers operating at a wavelength of 1.5 microns with chemically etched mirrors is reported. The buried heterostructure lasers were prepared from InGaAsP/InP DH wafers reverse-mesa etched with a Br2:CH3OH solution, with the reverse-mesa walls buried by subsequent LPE growth. To fabricate the etched mirror laser, Au-Zn metal was evaporated onto the epitaxial-layer side of the wafer and an Au-Zn contact was defined by photolithography; photolithographic techniques were used to define a SiO2 mask directly over the Au-Zn contact for etched mirror definition using either 0.3 vol % Br2:CH3OH or HCl:CH3COOH:H2O2 1:2:1 solutions. A threshold current of 50 mA is obtained from lasers thus produced, which is nearly the same as that of conventionally fabricated cleaved-mirror lasers. The procedure presented thus allows low threshold-current devices to be obtained with a much greater flexibility in design and fabrication than previously attained.

  7. Study on accumulated crystallization characteristics of amorphous Ge2Sb2Te5 induced by multi-pulsed laser irradiations with different fluences

    NASA Astrophysics Data System (ADS)

    Fan, T.; Liu, F. R.; Li, W. Q.; Guo, J. C.; Wang, Y. H.; Sun, N. X.; Liu, F.

    2018-07-01

    Accumulated crystallization characteristics of amorphous Ge2Sb2Te5 (a-GST) films induced by multi-pulsed laser irradiations with different fluences were investigated by x-ray diffraction (XRD), Raman spectroscopy and spectrophotometer. Solid-state transformation was performed at low fluence (LF, 30.5 mJ cm‑2), whereas melting-cooling transformation dominated at medium and high fluence (MF, 45.7 and HF, 61 mJ cm‑2). Solid-state transformation induced by subsequent LF pulses promoted the growth and coalescence of grains, linearly increasing the average grain size, accordingly causing blue-shifts of the Raman spectral peaks. For MF/HF pulse irradiated films, the relatively high laser fluence increased the melting depth and reduced the volume fraction of the crystalline state induced by individual pulses, thereby increasing the threshold of laser pulse numbers for XRD detectable crystallization. However, the remelting depth induced by subsequent MF/HF laser pulse progressively decreased. The remelting-recrystallization process refined grain sizes, which improved the red-shifts of Raman spectral peaks. Moreover, optical contrast increased dramatically compared to single laser irradiation and five-level storage could be realized for a linear increase of optical contrast. The present study is fundamental for realizing the potential of multi-level devices.

  8. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ = 1470 nm)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Veselov, D A; Ayusheva, K R; Shashkin, I S

    2015-10-31

    We have studied the effect of laser cavity parameters on the light–current characteristics of lasers based on the AlGaInAs/GaInAsP/InP solid solution system that emit in the spectral range 1400 – 1600 nm. It has been shown that optimisation of cavity parameters (chip length and front facet reflectivity) allows one to improve heat removal from the laser, without changing other laser characteristics. An increase in the maximum output optical power of the laser by 0.5 W has been demonstrated due to cavity design optimisation. (lasers)

  9. Methoden der digitalen Planung

    NASA Astrophysics Data System (ADS)

    Westkämper, Engelbert; Niemann, Jörg; Warschat, Joachim; Scheer, August-Wilhelm; Thomas, Oliver

    Die industrielle Produktion ist das Herz der verarbeitenden Industrie in Deutschland. Mit einem Beitrag von rund 500 Mrd. EUR pro Jahr erwirtschaftet das verarbeitende Gewerbe etwa ein Viertel der gesamtwirtschaftlichen Wertschöpfung in Deutschland. Gemessen am Produktionswert der Gesamtwirtschaft betrug der industrielle Anteil sogar über ein Drittel. Der Erhalt und der Ausbau der Wettbewerbsfähigkeit unter den gegebenen Rahmenbedingungen der globalen Märkte ist eine der größten Herausforderungen der deutschen Wirtschaft [5, 8]. In diesem Beitrag soll - ausgehend von einer Strategie der Ausrüster von Fabriken in einer globalen Produktion - diskutiert werden, wie mit der digitalen Fabrik Potentiale in den Planungs- und Wandlungsprozessen erschlossen werden können.

  10. Charged-pion cross sections and double-helicity asymmetries in polarized p +p collisions at √{s }=200 GeV

    NASA Astrophysics Data System (ADS)

    Adare, A.; Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Akimoto, R.; Al-Ta'Ani, H.; Alexander, J.; Andrews, K. R.; Angerami, A.; Aoki, K.; Apadula, N.; Appelt, E.; Aramaki, Y.; Armendariz, R.; Aschenauer, E. C.; Atomssa, E. T.; Awes, T. C.; Azmoun, B.; Babintsev, V.; Bai, M.; Bannier, B.; Barish, K. N.; Bassalleck, B.; Basye, A. T.; Bathe, S.; Baublis, V.; Baumann, C.; Bazilevsky, A.; Belmont, R.; Ben-Benjamin, J.; Bennett, R.; Blau, D. S.; Bok, J. S.; Boyle, K.; Brooks, M. L.; Broxmeyer, D.; Buesching, H.; Bumazhnov, V.; Bunce, G.; Butsyk, S.; Campbell, S.; Castera, P.; Chen, C.-H.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Choudhury, R. K.; Christiansen, P.; Chujo, T.; Chvala, O.; Cianciolo, V.; Citron, Z.; Cole, B. A.; Conesa Del Valle, Z.; Connors, M.; Csanád, M.; Csörgő, T.; Dairaku, S.; Datta, A.; David, G.; Dayananda, M. K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Dharmawardane, K. V.; Dietzsch, O.; Dion, A.; Donadelli, M.; Drapier, O.; Drees, A.; Drees, K. A.; Durham, J. M.; Durum, A.; D'Orazio, L.; Efremenko, Y. V.; Engelmore, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Fadem, B.; Fields, D. E.; Finger, M.; Finger, M.; Fleuret, F.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukao, Y.; Fusayasu, T.; Gal, C.; Garishvili, I.; Giordano, F.; Glenn, A.; Gong, X.; Gonin, M.; Goto, Y.; Granier de Cassagnac, R.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gunji, T.; Guo, L.; Gustafsson, H.-Å.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamblen, J.; Han, R.; Hanks, J.; Harper, C.; Hashimoto, K.; Haslum, E.; Hayano, R.; He, X.; Hemmick, T. K.; Hester, T.; Hill, J. C.; Hollis, R. S.; Holzmann, W.; Homma, K.; Hong, B.; Horaguchi, T.; Hori, Y.; Hornback, D.; Huang, S.; Ichihara, T.; Ichimiya, R.; Iinuma, H.; Ikeda, Y.; Imai, K.; Inaba, M.; Iordanova, A.; Isenhower, D.; Ishihara, M.; Issah, M.; Ivanischev, D.; Iwanaga, Y.; Jacak, B. V.; Jia, J.; Jiang, X.; John, D.; Johnson, B. M.; Jones, T.; Joo, K. S.; Jouan, D.; Kamin, J.; Kaneti, S.; Kang, B. H.; Kang, J. H.; Kang, J. S.; Kapustinsky, J.; Karatsu, K.; Kasai, M.; Kawall, D.; Kazantsev, A. V.; Kempel, T.; Khanzadeev, A.; Kijima, K. M.; Kim, B. I.; Kim, D. J.; Kim, E.-J.; Kim, Y.-J.; Kim, Y. K.; Kinney, E.; Kiss, Á.; Kistenev, E.; Kleinjan, D.; Kline, P.; Kochenda, L.; Komkov, B.; Konno, M.; Koster, J.; Kotov, D.; Král, A.; Kunde, G. J.; Kurita, K.; Kurosawa, M.; Kwon, Y.; Kyle, G. S.; Lacey, R.; Lai, Y. S.; Lajoie, J. G.; Lebedev, A.; Lee, D. M.; Lee, J.; Lee, K. B.; Lee, K. S.; Lee, S. H.; Lee, S. R.; Leitch, M. J.; Leite, M. A. L.; Li, X.; Lim, S. H.; Linden Levy, L. A.; Liu, H.; Liu, M. X.; Love, B.; Lynch, D.; Maguire, C. F.; Makdisi, Y. I.; Manion, A.; Manko, V. I.; Mannel, E.; Mao, Y.; Masui, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Means, N.; Mendoza, M.; Meredith, B.; Miake, Y.; Mibe, T.; Mignerey, A. C.; Miki, K.; Milov, A.; Mitchell, J. T.; Miyachi, Y.; Mohanty, A. K.; Moon, H. J.; Morino, Y.; Morreale, A.; Morrison, D. P.; Motschwiller, S.; Moukhanova, T. V.; Murakami, T.; Murata, J.; Nagamiya, S.; Nagle, J. L.; Naglis, M.; Nagy, M. I.; Nakagawa, I.; Nakamiya, Y.; Nakamura, K. R.; Nakamura, T.; Nakano, K.; Newby, J.; Nguyen, M.; Nihashi, M.; Nouicer, R.; Nyanin, A. S.; Oakley, C.; O'Brien, E.; Ogilvie, C. A.; Oka, M.; Okada, K.; Oskarsson, A.; Ouchida, M.; Ozawa, K.; Pak, R.; Pantuev, V.; Papavassiliou, V.; Park, B. H.; Park, I. H.; Park, S. K.; Pate, S. F.; Patel, L.; Pei, H.; Peng, J.-C.; Pereira, H.; Peressounko, D. Yu.; Petti, R.; Pinkenburg, C.; Pisani, R. P.; Proissl, M.; Purschke, M. L.; Qu, H.; Rak, J.; Ravinovich, I.; Read, K. F.; Reygers, K.; Riabov, V.; Riabov, Y.; Richardson, E.; Roach, D.; Roche, G.; Rolnick, S. D.; Rosati, M.; Rosendahl, S. S. E.; Rubin, J. G.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Samsonov, V.; Sano, S.; Sarsour, M.; Sato, T.; Savastio, M.; Sawada, S.; Sedgwick, K.; Seidl, R.; Seto, R.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shim, H. H.; Shimomura, M.; Shoji, K.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Silvestre, C.; Sim, K. S.; Singh, B. K.; Singh, C. P.; Singh, V.; Slunečka, M.; Sodre, T.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Stenlund, E.; Stoll, S. P.; Sugitate, T.; Sukhanov, A.; Sun, J.; Sziklai, J.; Takagui, E. M.; Takahara, A.; Taketani, A.; Tanabe, R.; Tanaka, Y.; Taneja, S.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tennant, E.; Themann, H.; Thomas, D.; Togawa, M.; Tomášek, L.; Tomášek, M.; Torii, H.; Towell, R. S.; Tserruya, I.; Tsuchimoto, Y.; Utsunomiya, K.; Vale, C.; van Hecke, H. W.; Vazquez-Zambrano, E.; Veicht, A.; Velkovska, J.; Vértesi, R.; Virius, M.; Vossen, A.; Vrba, V.; Vznuzdaev, E.; Wang, X. R.; Watanabe, D.; Watanabe, K.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; Wei, R.; Wessels, J.; White, S. N.; Winter, D.; Woody, C. L.; Wright, R. M.; Wysocki, M.; Yamaguchi, Y. L.; Yang, R.; Yanovich, A.; Ying, J.; Yokkaichi, S.; Yoo, J. S.; You, Z.; Young, G. R.; Younus, I.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zhou, S.; Phenix Collaboration

    2015-02-01

    We present midrapidity charged-pion invariant cross sections, the ratio of the π- to π+ cross sections and the charge-separated double-spin asymmetries in polarized p +p collisions at √{s }=200 GeV . While the cross section measurements are consistent within the errors of next-to-leading-order (NLO) perturbative quantum chromodynamics predictions (pQCD), the same calculations overestimate the ratio of the charged-pion cross sections. This discrepancy arises from the cancellation of the substantial systematic errors associated with the NLO-pQCD predictions in the ratio and highlights the constraints these data will place on flavor-dependent pion fragmentation functions. The charge-separated pion asymmetries presented here sample an x range of ˜0.03 - 0.16 and provide unique information on the sign of the gluon-helicity distribution.

  11. Topological, total, and elastic cross sections for K/sup +/p,. pi. /sup +/p, and pp interactions at 147 GeV/c

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Brick, D.; Rudnicka, H.; Shapiro, A.M.

    1982-06-01

    The Fermilab hybrid 30-in. bubble-chamber spectrometer was exposed to a tagged 147-GeV/c positive beam containing ..pi../sup +/, K/sup +/, and p. A sample of 3003 K/sup +/p, 19 410 pp, and 20 745 ..pi../sup +/p interactions is used to derive sigma/sub n/, , f/sub 2//sup tsc/c, and /D for each beam particle. These values are compared to values obtained at other, mostly lower, beam momenta. The overall dependence of on E/sub a/, the available center-of-mass energy, for these three reactions as well as ..pi../sup -/p and pp interactions has been determined.

  12. Accelerating Into the Future: From 0 to GeV in a Few Centimeters (LBNL Summer Lecture Series)

    ScienceCinema

    Leemans, Wim [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Accelerator and Fusion Research Division (AFRD) and Laser Optics and Accelerator Systems Integrated Studies (LOASIS)

    2018-05-04

    Summer Lecture Series 2008: By exciting electric fields in plasma-based waveguides, lasers accelerate electrons in a fraction of the distance conventional accelerators require. The Accelerator and Fusion Research Division's LOASIS program, headed by Wim Leemans, has used 40-trillion-watt laser pulses to deliver billion-electron-volt (1 GeV) electron beams within centimeters. Leemans looks ahead to BELLA, 10-GeV accelerating modules that could power a future linear collider.

  13. Accelerating Into the Future: From 0 to GeV in a Few Centimeters (LBNL Summer Lecture Series)

    ScienceCinema

    Leemans, Wim [LOASIS Program, AFRD

    2017-12-09

    July 8, 2008 Berkeley Lab lecture: By exciting electric fields in plasma-based waveguides, lasers accelerate electrons in a fraction of the distance conventional accelerators require. The Accelerator and Fusion Research Division's LOASIS program, headed by Wim Leemans, has used 40-trillion-watt laser pulses to deliver billion-electron-volt (1 GeV) electron beams within centimeters. Leemans looks ahead to BELLA, 10-GeV accelerating modules that could power a future linear collider.

  14. Fabrication of Nanostructured Mesoporous Germanium for Application in Laser Desorption Ionization Mass Spectrometry.

    PubMed

    Abdelmaksoud, Hazem H; Guinan, Taryn M; Voelcker, Nicolas H

    2017-02-15

    Surface-assisted laser desorption/ionization mass spectrometry (SALDI-MS) is a high-throughput analytical technique ideally suited for small-molecule detection from different bodily fluids (e.g., saliva, urine, and blood plasma). Many SALDI-MS substrates require complex fabrication processes and further surface modifications. Furthermore, some substrates show instability upon exposure to ambient conditions and need to be kept under special inert conditions. We have successfully optimized mesoporous germanium (meso-pGe) using bipolar electrochemical etching and efficiently applied meso-pGe as a SALDI-MS substrate for the detection of illicit drugs such as in the context of workplace, roadside, and antiaddictive drug compliance. Argon plasma treatment improved the meso-pGe efficiency as a SALDI-MS substrate and eliminated the need for surface functionalization. The resulting substrate showed a precise surface geometry tuning by altering the etching parameters, and an outstanding performance for illicit drug detection with a limit of detection in Milli-Q water of 1.7 ng/mL and in spiked saliva as low as 5.3 ng/mL for cocaine. The meso-pGe substrate had a demonstrated stability over 56 days stored in ambient conditions. This proof-of-principle study demonstrates that meso-pGe can be reproducibly fabricated and applied as an analytical SALDI-MS substrate which opens the door for further analytical and forensic high-throughput applications.

  15. Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

    NASA Astrophysics Data System (ADS)

    Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

    2012-02-01

    High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

  16. Cross section and transverse single-spin asymmetry of η mesons in p↑+p collisions at √s =200 GeV at forward rapidity

    NASA Astrophysics Data System (ADS)

    Adare, A.; Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Akimoto, R.; Al-Bataineh, H.; Alexander, J.; Alfred, M.; Angerami, A.; Aoki, K.; Apadula, N.; Aramaki, Y.; Asano, H.; Atomssa, E. T.; Averbeck, R.; Awes, T. C.; Azmoun, B.; Babintsev, V.; Bai, M.; Baksay, G.; Baksay, L.; Bandara, N. S.; Bannier, B.; Barish, K. N.; Bassalleck, B.; Basye, A. T.; Bathe, S.; Baublis, V.; Baumann, C.; Bazilevsky, A.; Beaumier, M.; Beckman, S.; Belikov, S.; Belmont, R.; Bennett, R.; Berdnikov, A.; Berdnikov, Y.; Bhom, J. H.; Black, D.; Blau, D. S.; Bok, J. S.; Boyle, K.; Brooks, M. L.; Bryslawskyj, J.; Buesching, H.; Bumazhnov, V.; Bunce, G.; Butsyk, S.; Campbell, S.; Caringi, A.; Chen, C.-H.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Choudhury, R. K.; Christiansen, P.; Chujo, T.; Chung, P.; Chvala, O.; Cianciolo, V.; Citron, Z.; Cole, B. A.; Conesa Del Valle, Z.; Connors, M.; Csanád, M.; Csörgő, T.; Dahms, T.; Dairaku, S.; Danchev, I.; Das, K.; Datta, A.; Daugherity, M. S.; David, G.; Dayananda, M. K.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Dharmawardane, K. V.; Dietzsch, O.; Ding, L.; Dion, A.; Do, J. H.; Donadelli, M.; Drapier, O.; Drees, A.; Drees, K. A.; Durham, J. M.; Durum, A.; Dutta, D.; D'Orazio, L.; Edwards, S.; Efremenko, Y. V.; Ellinghaus, F.; Engelmore, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Eyser, K. O.; Fadem, B.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fleuret, F.; Fokin, S. L.; Fraenkel, Z.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fujiwara, K.; Fukao, Y.; Fusayasu, T.; Gal, C.; Gallus, P.; Garg, P.; Garishvili, I.; Ge, H.; Giordano, F.; Glenn, A.; Gong, H.; Gonin, M.; Goto, Y.; Granier de Cassagnac, R.; Grau, N.; Greene, S. V.; Grim, G.; Grosse Perdekamp, M.; Gu, Y.; Gunji, T.; Guragain, H.; Gustafsson, H.-Å.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamblen, J.; Han, R.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haslum, E.; Hayano, R.; He, X.; Heffner, M.; Hemmick, T. K.; Hester, T.; Hill, J. C.; Hohlmann, M.; Hollis, R. S.; Holzmann, W.; Homma, K.; Hong, B.; Horaguchi, T.; Hornback, D.; Hoshino, T.; Huang, S.; Ichihara, T.; Ichimiya, R.; Ikeda, Y.; Imai, K.; Imazu, Y.; Inaba, M.; Iordanova, A.; Isenhower, D.; Ishihara, M.; Issah, M.; Ivanischev, D.; Ivanishchev, D.; Iwanaga, Y.; Jacak, B. V.; Jeon, S. J.; Jezghani, M.; Jia, J.; Jiang, X.; Jin, J.; Johnson, B. M.; Jones, T.; Joo, E.; Joo, K. S.; Jouan, D.; Jumper, D. S.; Kajihara, F.; Kamin, J.; Kang, J. H.; Kang, J. S.; Kapustinsky, J.; Karatsu, K.; Kasai, M.; Kawall, D.; Kawashima, M.; Kazantsev, A. V.; Kempel, T.; Key, J. A.; Khachatryan, V.; Khanzadeev, A.; Kihara, K.; Kijima, K. M.; Kikuchi, J.; Kim, A.; Kim, B. I.; Kim, C.; Kim, D. H.; Kim, D. J.; Kim, E.-J.; Kim, H.-J.; Kim, M.; Kim, Y.-J.; Kim, Y. K.; Kinney, E.; Kiss, Á.; Kistenev, E.; Klatsky, J.; Kleinjan, D.; Kline, P.; Koblesky, T.; Kochenda, L.; Kofarago, M.; Komkov, B.; Konno, M.; Koster, J.; Kotov, D.; Král, A.; Kravitz, A.; Kunde, G. J.; Kurita, K.; Kurosawa, M.; Kwon, Y.; Kyle, G. S.; Lacey, R.; Lai, Y. S.; Lajoie, J. G.; Lebedev, A.; Lee, D. M.; Lee, J.; Lee, K. B.; Lee, K. S.; Lee, S. H.; Leitch, M. J.; Leite, M. A. L.; Leitgab, M.; Li, X.; Lichtenwalner, P.; Liebing, P.; Lim, S. H.; Linden Levy, L. A.; Liška, T.; Liu, H.; Liu, M. X.; Love, B.; Lynch, D.; Maguire, C. F.; Makdisi, Y. I.; Makek, M.; Malik, M. D.; Manion, A.; Manko, V. I.; Mannel, E.; Mao, Y.; Masui, H.; Matathias, F.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Means, N.; Meles, A.; Mendoza, M.; Meredith, B.; Miake, Y.; Mibe, T.; Mignerey, A. C.; Miki, K.; Miller, A. J.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Miyasaka, S.; Mizuno, S.; Mohanty, A. K.; Montuenga, P.; Moon, H. J.; Moon, T.; Morino, Y.; Morreale, A.; Morrison, D. P.; Moukhanova, T. V.; Murakami, T.; Murata, J.; Mwai, A.; Nagamiya, S.; Nagle, J. L.; Naglis, M.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakamiya, Y.; Nakamura, K. R.; Nakamura, T.; Nakano, K.; Nam, S.; Nattrass, C.; Netrakanti, P. K.; Newby, J.; Nguyen, M.; Nihashi, M.; Niida, T.; Nouicer, R.; Novitzky, N.; Nyanin, A. S.; Oakley, C.; O'Brien, E.; Oda, S. X.; Ogilvie, C. A.; Oka, M.; Okada, K.; Onuki, Y.; Orjuela Koop, J. D.; Oskarsson, A.; Ouchida, M.; Ozaki, H.; Ozawa, K.; Pak, R.; Pantuev, V.; Papavassiliou, V.; Park, I. H.; Park, S.; Park, S. K.; Park, W. J.; Pate, S. F.; Patel, L.; Patel, M.; Pei, H.; Peng, J.-C.; Pereira, H.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perry, J.; Petti, R.; Pinkenburg, C.; Pinson, R.; Pisani, R. P.; Proissl, M.; Purschke, M. L.; Qu, H.; Rak, J.; Ravinovich, I.; Read, K. F.; Rembeczki, S.; Reygers, K.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richardson, E.; Riveli, N.; Roach, D.; Roche, G.; Rolnick, S. D.; Rosati, M.; Rosen, C. A.; Rosendahl, S. S. E.; Rowan, Z.; Rubin, J. G.; Ružička, P.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sakashita, K.; Sako, H.; Samsonov, V.; Sano, S.; Sarsour, M.; Sato, S.; Sato, T.; Sawada, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seele, J.; Seidl, R.; Sen, A.; Seto, R.; Sett, P.; Sexton, A.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shoji, K.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Silvestre, C.; Sim, K. S.; Singh, B. K.; Singh, C. P.; Singh, V.; Slunečka, M.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Stenlund, E.; Stepanov, M.; Stoll, S. P.; Sugitate, T.; Sukhanov, A.; Sumita, T.; Sun, J.; Sziklai, J.; Takagui, E. M.; Takahara, A.; Taketani, A.; Tanabe, R.; Tanaka, Y.; Taneja, S.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Themann, H.; Thomas, D.; Thomas, T. L.; Timilsina, A.; Todoroki, T.; Togawa, M.; Toia, A.; Tomášek, L.; Tomášek, M.; Torii, H.; Towell, M.; Towell, R.; Towell, R. S.; Tserruya, I.; Tsuchimoto, Y.; Vale, C.; Valle, H.; van Hecke, H. W.; Vargyas, M.; Vazquez-Zambrano, E.; Veicht, A.; Velkovska, J.; Vértesi, R.; Virius, M.; Vrba, V.; Vznuzdaev, E.; Wang, X. R.; Watanabe, D.; Watanabe, K.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; Wei, R.; Wessels, J.; Whitaker, S.; White, S. N.; Winter, D.; Wolin, S.; Woody, C. L.; Wright, R. M.; Wysocki, M.; Xia, B.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yamaura, K.; Yang, R.; Yanovich, A.; Ying, J.; Yokkaichi, S.; Yoon, I.; You, Z.; Young, G. R.; Younus, I.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zhou, S.; Phenix Collaboration

    2014-10-01

    We present a measurement of the cross section and transverse single-spin asymmetry (AN) for η mesons at large pseudorapidity from √s =200 GeV p↑+p collisions. The measured cross section for 0.5<pT<5.0 GeV /c and 3.0<|η|<3.8 is well described by a next-to-leading-order perturbative-quantum-chromodynamics calculation. The asymmetries AN have been measured as a function of Feynman-x (xF) from 0.2<|xF|<0.7, as well as transverse momentum (pT) from 1.0<pT<4.5 GeV /c. The asymmetry averaged over positive xF is ⟨AN⟩=0.061±0.014. The results are consistent with prior transverse single-spin measurements of forward η and π0 mesons at various energies in overlapping xF ranges. Comparison of different particle species can help to determine the origin of the large observed asymmetries in p↑+p collisions.

  17. INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Liquid phase epitaxial growth of GaInAsP/InP laser structures

    NASA Astrophysics Data System (ADS)

    Nohavica, D.; Têminová, J.; Berková, D.; Zagrádková, M.; Kortan, I.; Zelinka, I.; Walachová, I.; Malina, V.

    1988-11-01

    A modified single-phase liquid phase epitaxy method was developed on the basis of a novel variant of the growth boat. The method was used to grow GaInAsP/InP double heterostructures for lasers emitting at 1.3 and 1.55 μm. The main properties of wide-contact diodes (radiation power and threshold current density) were adopted as the characteristics of the quality of heterostructures characterized by different configurations of active and guiding layers. The quality of the structure was confirmed by the fabrication of laser diodes of the following types: stripe with oxide insulation, clad-ridge waveguide, and double-channel planar buried.

  18. Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Xing, G. C.; Bachmann, K. J.; Posthill, J. B.; Timmons, M. L.

    1991-01-01

    Epitaxial ZnGeP2-Ge films have been grown on (111)GaP substrates using MOCVD. The films grown with dimethylzinc to germane flow rate ratio R greater than 10 show mirror-smooth surface morphology. Films grown with R less than 10 show a high density of twinning, including both double position and growth twins. Compared to films grown on (001) GaP substrates, the layers on (111) GaP generally show a higher density of microstructural defects. TEM electron diffraction patterns show that the films grown on (111) GaP substrates are more disordered than films grown on (001) GaP under comparable conditions. The growth rate on (111) GaP substrates is about 2.5 times slower than that on (001) GaP, and films grown on Si substrates show extensive twinning formation. Both TEM and SEM examinations indicate that smooth epitaxial overgrowth may be easier on (111) Si substrates than on (001) Si.

  19. Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects

    NASA Astrophysics Data System (ADS)

    Kaleem, Mohammad; Nazir, Sajid; Saqib, Nazar Abbas

    2016-03-01

    Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.

  20. Production asymmetry of $$\\Lambda^0$$ and $${\\overline{\\Lambda}}^0$$ in $$\\pi^{\\pm}$$, $$K^{\\pm}$$, p - nucleon collisions at 250 GeV/c (in Portuguese)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nicola, Marcello Santo

    Using data from Fermilab xed-target experiment E769, we have measured particleantiparticle production asymmetries for Λ 0 hyperons in π ± - nucleon interactions, K ± - nucleon interactions and p - nucleon interactions at 250 GeV/c. The asymmetries are measured as functions of Feynman-x (x f ) and p T 2 over the ranges 0 ≤ p T 2 ≤ 4(GeV/c) 2 and -0.12 ≤ x F ≤ 0.12 (for positive beam) and 0 ≤ p T 2 ≤ 10(GeV/c) 2 and -0.16 ≤ x F ≤ 0:.0 for the negative beam. We find substantial asymmetries, even at x Fmore » = 0. We also observe leading-particle-type asymmetries which qualitatively agree with theoretical predictions.« less

  1. Transverse momentum and centrality dependence of high-pT nonphotonic electron suppression in Au+Au collisions at sqrt[s NN]=200 GeV.

    PubMed

    Abelev, B I; Aggarwal, M M; Ahammed, Z; Anderson, B D; Arkhipkin, D; Averichev, G S; Bai, Y; Balewski, J; Barannikova, O; Barnby, L S; Baudot, J; Baumgart, S; Belaga, V V; Bellingeri-Laurikainen, A; Bellwied, R; Benedosso, F; Betts, R R; Bhardwaj, S; Bhasin, A; Bhati, A K; Bichsel, H; Bielcik, J; Bielcikova, J; Bland, L C; Blyth, S-L; Bombara, M; Bonner, B E; Botje, M; Bouchet, J; Brandin, A V; Bravar, A; Burton, T P; Bystersky, M; Cadman, R V; Cai, X Z; Caines, H; Calderón de la Barca Sánchez, M; Callner, J; Catu, O; Cebra, D; Chajecki, Z; Chaloupka, P; Chattopadhyay, S; Chen, H F; Chen, J H; Chen, J Y; Cheng, J; Cherney, M; Chikanian, A; Christie, W; Chung, S U; Coffin, J P; Cormier, T M; Cosentino, M R; Cramer, J G; Crawford, H J; Das, D; Dash, S; Daugherity, M; de Moura, M M; Dedovich, T G; Dephillips, M; Derevschikov, A A; Didenko, L; Dietel, T; Djawotho, P; Dogra, S M; Dong, X; Drachenberg, J L; Draper, J E; Du, F; Dunin, V B; Dunlop, J C; Dutta Mazumdar, M R; Eckardt, V; Edwards, W R; Efimov, L G; Emelianov, V; Engelage, J; Eppley, G; Erazmus, B; Estienne, M; Fachini, P; Fatemi, R; Fedorisin, J; Feng, A; Filip, P; Finch, E; Fine, V; Fisyak, Y; Fu, J; Gagliardi, C A; Gaillard, L; Ganti, M S; Garcia-Solis, E; Ghazikhanian, V; Ghosh, P; Gorbunov, Y G; Gos, H; Grebenyuk, O; Grosnick, D; Guertin, S M; Guimaraes, K S F F; Gupta, N; Haag, B; Hallman, T J; Hamed, A; Harris, J W; He, W; Heinz, M; Henry, T W; Heppelmann, S; Hippolyte, B; Hirsch, A; Hjort, E; Hoffman, A M; Hoffmann, G W; Hofman, D; Hollis, R; Horner, M J; Huang, H Z; Hughes, E W; Humanic, T J; Igo, G; Iordanova, A; Jacobs, P; Jacobs, W W; Jakl, P; Jia, F; Jones, P G; Judd, E G; Kabana, S; Kang, K; Kapitan, J; Kaplan, M; Keane, D; Kechechyan, A; Kettler, D; Khodyrev, V Yu; Kim, B C; Kiryluk, J; Kisiel, A; Kislov, E M; Klein, S R; Knospe, A G; Kocoloski, A; Koetke, D D; Kollegger, T; Kopytine, M; Kotchenda, L; Kouchpil, V; Kowalik, K L; Kravtsov, P; Kravtsov, V I; Krueger, K; Kuhn, C; Kulikov, A I; Kumar, A; Kurnadi, P; Kuznetsov, A A; Lamont, M A C; Landgraf, J M; Lange, S; Lapointe, S; Laue, F; Lauret, J; Lebedev, A; Lednicky, R; Lee, C-H; Lehocka, S; LeVine, M J; Li, C; Li, Q; Li, Y; Lin, G; Lin, X; Lindenbaum, S J; Lisa, M A; Liu, F; Liu, H; Liu, J; Liu, L; Ljubicic, T; Llope, W J; Longacre, R S; Love, W A; Lu, Y; Ludlam, T; Lynn, D; Ma, G L; Ma, J G; Ma, Y G; Magestro, D; Mahapatra, D P; Majka, R; Mangotra, L K; Manweiler, R; Margetis, S; Markert, C; Martin, L; Matis, H S; Matulenko, Yu A; McClain, C J; McShane, T S; Melnick, Yu; Meschanin, A; Millane, J; Miller, M L; Minaev, N G; Mioduszewski, S; Mironov, C; Mischke, A; Mitchell, J; Mohanty, B; Morozov, D A; Munhoz, M G; Nandi, B K; Nattrass, C; Nayak, T K; Nelson, J M; Nepali, N S; Netrakanti, P K; Nogach, L V; Nurushev, S B; Odyniec, G; Ogawa, A; Okorokov, V; Oldenburg, M; Olson, D; Pachr, M; Pal, S K; Panebratsev, Y; Pavlinov, A I; Pawlak, T; Peitzmann, T; Perevoztchikov, V; Perkins, C; Peryt, W; Phatak, S C; Planinic, M; Pluta, J; Poljak, N; Porile, N; Poskanzer, A M; Potekhin, M; Potrebenikova, E; Potukuchi, B V K S; Prindle, D; Pruneau, C; Putschke, J; Qattan, I A; Raniwala, R; Raniwala, S; Ray, R L; Relyea, D; Ridiger, A; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Rose, A; Roy, C; Ruan, L; Russcher, M J; Sahoo, R; Sakrejda, I; Sakuma, T; Salur, S; Sandweiss, J; Sarsour, M; Sazhin, P S; Schambach, J; Scharenberg, R P; Schmitz, N; Seger, J; Selyuzhenkov, I; Seyboth, P; Shabetai, A; Shahaliev, E; Shao, M; Sharma, M; Shen, W Q; Shimanskiy, S S; Sichtermann, E P; Simon, F; Singaraju, R N; Smirnov, N; Snellings, R; Sorensen, P; Sowinski, J; Speltz, J; Spinka, H M; Srivastava, B; Stadnik, A; Stanislaus, T D S; Staszak, D; Stock, R; Strikhanov, M; Stringfellow, B; Suaide, A A P; Suarez, M C; Subba, N L; Sumbera, M; Sun, X M; Sun, Z; Surrow, B; Symons, T J M; Szanto de Toledo, A; Takahashi, J; Tang, A H; Tarnowsky, T; Thomas, J H; Timmins, A R; Timoshenko, S; Tokarev, M; Trainor, T A; Trentalange, S; Tribble, R E; Tsai, O D; Ulery, J; Ullrich, T; Underwood, D G; Van Buren, G; van der Kolk, N; van Leeuwen, M; Vander Molen, A M; Varma, R; Vasilevski, I M; Vasiliev, A N; Vernet, R; Vigdor, S E; Viyogi, Y P; Vokal, S; Voloshin, S A; Waggoner, W T; Wang, F; Wang, G; Wang, J S; Wang, X L; Wang, Y; Watson, J W; Webb, J C; Westfall, G D; Wetzler, A; Whitten, C; Wieman, H; Wissink, S W; Witt, R; Wu, J; Wu, Y; Xu, N; Xu, Q H; Xu, Z; Yepes, P; Yoo, I-K; Yue, Q; Yurevich, V I; Zhan, W; Zhang, H; Zhang, W M; Zhang, Y; Zhang, Z P; Zhao, Y; Zhong, C; Zhou, J; Zoulkarneev, R; Zoulkarneeva, Y; Zubarev, A N; Zuo, J X

    2007-05-11

    The STAR collaboration at the BNL Relativistic Heavy-Ion Collider (RHIC) reports measurements of the inclusive yield of nonphotonic electrons, which arise dominantly from semileptonic decays of heavy flavor mesons, over a broad range of transverse momenta (1.2<p(T)<10 GeV/c) in p+p, d+Au, and Au+Au collisions at sqrt[s_{NN}]=200 GeV. The nonphotonic electron yield exhibits an unexpectedly large suppression in central Au+Au collisions at high p(T), suggesting substantial heavy-quark energy loss at RHIC. The centrality and p(T) dependences of the suppression provide constraints on theoretical models of suppression.

  2. Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers.

    PubMed

    Shamim, Saquib; Mahapatra, S; Scappucci, G; Klesse, W M; Simmons, M Y; Ghosh, Arindam

    2017-05-04

    We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3-2.5 × 10 18 m -2 ) at low temperatures (0.3-4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.

  3. REACTION RATES OF {sup 64}Ge(p,γ){sup 65}As AND {sup 65}As(p,γ){sup 66}Se AND THE EXTENT OF NUCLEOSYNTHESIS IN TYPE I X-RAY BURSTS

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lam, Y. H.; He, J. J.; Wang, M.

    2016-02-10

    The extent of nucleosynthesis in models of type I X-ray bursts (XRBs) and the associated impact on the energy released in these explosive events are sensitive to nuclear masses and reaction rates around the {sup 64}Ge waiting point. Using the well known mass of {sup 64}Ge, the recently measured {sup 65}As mass, and large-scale shell model calculations, we have determined new thermonuclear rates of the {sup 64}Ge(p,γ){sup 65}As and {sup 65}As(p,γ){sup 66}Se reactions with reliable uncertainties. The new reaction rates differ significantly from previously published rates. Using the new data, we analyze the impact of the new rates and themore » remaining nuclear physics uncertainties on the {sup 64}Ge waiting point in a number of representative one-zone XRB models. We find that in contrast to previous work, when all relevant uncertainties are considered, a strong {sup 64}Ge rp-process waiting point cannot be ruled out. The nuclear physics uncertainties strongly affect XRB model predictions of the synthesis of {sup 64}Zn, the synthesis of nuclei beyond A = 64, the energy generation, and the burst light curve. We also identify key nuclear uncertainties that need to be addressed to determine the role of the {sup 64}Ge waiting point in XRBs. These include the remaining uncertainty in the {sup 65}As mass, the uncertainty of the {sup 66}Se mass, and the remaining uncertainty in the {sup 65}As(p,γ){sup 66}Se reaction rate, which mainly originates from uncertain resonance energies.« less

  4. Molecules for materials: germanium hydride neutrals and anions. Molecular structures, electron affinities, and thermochemistry of GeHn/GeHn- (n = 0-4) and Ge2Hn/Ge2Hn(-) (n = 0-6).

    PubMed

    Li, Qian-Shu; Lü, Rui-Hua; Xie, Yaoming; Schaefer, Henry F

    2002-12-01

    The GeH(n) (n = 0-4) and Ge(2)H(n) (n = 0-6) systems have been studied systematically by five different density functional methods. The basis sets employed are of double-zeta plus polarization quality with additional s- and p-type diffuse functions, labeled DZP++. For each compound plausible energetically low-lying structures were optimized. The methods used have been calibrated against a comprehensive tabulation of experimental electron affinities (Chemical Reviews 102, 231, 2002). The geometries predicted in this work include yet unknown anionic species, such as Ge(2)H(-), Ge(2)H(2)(-), Ge(2)H(3)(-), Ge(2)H(4)(-), and Ge(2)H(5)(-). In general, the BHLYP method predicts the geometries closest to the few available experimental structures. A number of structures rather different from the analogous well-characterized hydrocarbon radicals and anions are predicted. For example, a vinylidene-like GeGeH(2) (-) structure is the global minimum of Ge(2)H(2) (-). For neutral Ge(2)H(4), a methylcarbene-like HGë-GeH(3) is neally degenerate with the trans-bent H(2)Ge=GeH(2) structure. For the Ge(2)H(4) (-) anion, the methylcarbene-like system is the global minimum. The three different neutral-anion energy differences reported in this research are: the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). For this family of molecules the B3LYP method appears to predict the most reliable electron affinities. The adiabatic electron affinities after the ZPVE correction are predicted to be 2.02 (Ge(2)), 2.05 (Ge(2)H), 1.25 (Ge(2)H(2)), 2.09 (Ge(2)H(3)), 1.71 (Ge(2)H(4)), 2.17 (Ge(2)H(5)), and -0.02 (Ge(2)H(6)) eV. We also reported the dissociation energies for the GeH(n) (n = 1-4) and Ge(2)H(n) (n = 1-6) systems, as well as those for their anionic counterparts. Our theoretical predictions provide strong motivation for the further experimental study of these important germanium hydrides. Copyright 2002 Wiley

  5. Pseudorapidity distributions of charged particles in d+Au and p+p collisions at {\\sqrt{s_{{\\rm NN}}} = \\rm {200 \\;GeV} }

    NASA Astrophysics Data System (ADS)

    Nouicer, Rachid; PHOBOS Collaboration; Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Holynski, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L. H.; Wosiek, B.; Wozniak, K.; Wyslouch, B.; Zhang, J.

    2004-08-01

    The measured pseudorapidity distributions of primary charged particles are presented for d+Au and p+p collisions at {\\sqrt{s_{{\\rm NN}}} = \\rm {200\\;GeV} } over a wide pseudorapidity range of |eegr|les 5.4. The results for d+Au collisions are presented for minimum-bias events and as a function of collision centrality. The measurements for p+p collisions are shown for minimum-bias events. The ratio of the charged particle multiplicity in d+Au and p+A collisions relative to that for inelastic p+p collisions is found to depend only on langNpartrang, and it is remarkably independent of collision energy and system mass. The deuteron and gold fragmentation regions in d+Au collisions are in good agreement with proton nucleus data at lower energies.

  6. Charged-pion cross sections and double-helicity asymmetries in polarized p + p collisions at √s = 200 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adare, A.; Aidala, C.; Ajitanand, N. N.

    2015-02-02

    We present midrapidity charged-pion invariant cross sections, the ratio of the π⁻ to π⁺ cross sections and the charge-separated double-spin asymmetries in polarized p+p collisions at √s = 200 GeV. While the cross section measurements are consistent within the errors of next-to-leadingorder (NLO) perturbative quantum chromodynamics predictions (pQCD), the same calculations over estimate the ratio of the charged-pion cross sections. This discrepancy arises from the cancellation of the substantial systematic errors associated with the NLO-pQCD predictions in the ratio and highlights the constraints these data will place on flavor dependent pion fragmentation functions. Thus, the charge-separated pion asymmetries presented heremore » sample an x range of ~0.03–0.16 and provide unique information on the sign of the gluon-helicity distribution.« less

  7. Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

    NASA Astrophysics Data System (ADS)

    Zhou, Xilin; Behera, Jitendra K.; Lv, Shilong; Wu, Liangcai; Song, Zhitang; Simpson, Robert E.

    2017-09-01

    By confining phase transitions to the nanoscale interface between two different crystals, interfacial phase change memory heterostructures represent the state of the art for energy efficient data storage. We present the effect of strain engineering on the electrical switching performance of the {{Sb}}2{{Te}}3-GeTe superlattice van der Waals devices. Multiple Ge atoms switching through a two-dimensional Te layer reduces the activation barrier for further atoms to switch; an effect that can be enhanced by biaxial strain. The out-of-plane phonon mode of the GeTe crystal remains active in the superlattice heterostructures. The large in-plane biaxial strain imposed by the {{Sb}}2{{Te}}3 layers on the GeTe layers substantially improves the switching speed, reset energy, and cyclability of the superlattice memory devices. Moreover, carefully controlling residual stress in the layers of {{Sb}}2{{Te}}3-GeTe interfacial phase change memories provides a new degree of freedom to design the properties of functional superlattice structures for memory and photonics applications.

  8. Rho0 production and possible modification in Au+Au and p+p collisions at square root [sNN] = 200 GeV.

    PubMed

    Adams, J; Adler, C; Aggarwal, M M; Ahammed, Z; Amonett, J; Anderson, B D; Arkhipkin, D; Averichev, G S; Badyal, S K; Balewski, J; Barannikova, O; Barnby, L S; Baudot, J; Bekele, S; Belaga, V V; Bellwied, R; Berger, J; Bezverkhny, B I; Bhardwaj, S; Bhati, A K; Bichsel, H; Billmeier, A; Bland, L C; Blyth, C O; Bonner, B E; Botje, M; Boucham, A; Brandin, A; Bravar, A; Cadman, R V; Cai, X Z; Caines, H; Calderón de la Barca Sánchez, M; Carroll, J; Castillo, J; Cebra, D; Chaloupka, P; Chattopadhyay, S; Chen, H F; Chen, Y; Chernenko, S P; Cherney, M; Chikanian, A; Christie, W; Coffin, J P; Cormier, T M; Cramer, J G; Crawford, H J; Das, D; Das, S; Derevschikov, A A; Didenko, L; Dietel, T; Dong, W J; Dong, X; Draper, J E; Du, F; Dubey, A K; Dunin, V B; Dunlop, J C; Dutta Majumdar, M R; Eckardt, V; Efimov, L G; Emelianov, V; Engelage, J; Eppley, G; Erazmus, B; Estienne, M; Fachini, P; Faine, V; Faivre, J; Fatemi, R; Filimonov, K; Filip, P; Finch, E; Fisyak, Y; Flierl, D; Foley, K J; Fu, J; Gagliardi, C A; Gagunashvili, N; Gans, J; Ganti, M S; Gaudichet, L; Geurts, F; Ghazikhanian, V; Ghosh, P; Gonzalez, J E; Grachov, O; Grebenyuk, O; Gronstal, S; Grosnick, D; Guertin, S M; Gupta, A; Gutierrez, T D; Hallman, T J; Hamed, A; Hardtke, D; Harris, J W; Heinz, M; Henry, T W; Heppelmann, S; Hippolyte, B; Hirsch, A; Hjort, E; Hoffmann, G W; Horsley, M; Huang, H Z; Huang, S L; Hughes, E; Humanic, T J; Igo, G; Ishihara, A; Jacobs, P; Jacobs, W W; Janik, M; Jiang, H; Johnson, I; Jones, P G; Judd, E G; Kabana, S; Kaplan, M; Keane, D; Khodyrev, V Yu; Kiryluk, J; Kisiel, A; Klay, J; Klein, S R; Klyachko, A; Koetke, D D; Kollegger, T; Kopytine, M; Kotchenda, L; Kovalenko, A D; Kramer, M; Kravtsov, P; Kravtsov, V I; Krueger, K; Kuhn, C; Kulikov, A I; Kumar, A; Kunde, G J; Kunz, C L; Kutuev, R Kh; Kuznetsov, A A; Lamont, M A C; Landgraf, J M; Lange, S; Lasiuk, B; Laue, F; Lauret, J; Lebedev, A; Lednický, R; LeVine, M J; Li, C; Li, Q; Lindenbaum, S J; Lisa, M A; Liu, F; Liu, L; Liu, Z; Liu, Q J; Ljubicic, T; Llope, W J; Long, H; Longacre, R S; Lopez-Noriega, M; Love, W A; Ludlam, T; Lynn, D; Ma, J; Ma, Y G; Magestro, D; Mahajan, S; Mangotra, L K; Mahapatra, D P; Majka, R; Manweiler, R; Margetis, S; Markert, C; Martin, L; Marx, J; Matis, H S; Matulenko, Yu A; McClain, C J; McShane, T S; Meissner, F; Melnick, Yu; Meschanin, A; Miller, M L; Milosevich, Z; Minaev, N G; Mironov, C; Mischke, A; Mishra, D; Mitchell, J; Mohanty, B; Molnar, L; Moore, C F; Mora-Corral, M J; Morozov, D A; Morozov, V; De Moura, M M; Munhoz, M G; Nandi, B K; Nayak, S K; Nayak, T K; Nelson, J M; Netrakanti, P K; Nikitin, V A; Nogach, L V; Norman, B; Nurushev, S B; Odyniec, G; Ogawa, A; Okorokov, V; Oldenburg, M; Olson, D; Paic, G; Pal, S K; Panebratsev, Y; Panitkin, S Y; Pavlinov, A I; Pawlak, T; Peitzmann, T; Perevoztchikov, V; Perkins, C; Peryt, W; Petrov, V A; Phatak, S C; Picha, R; Planinic, M; Pluta, J; Porile, N; Porter, J; Poskanzer, A M; Potekhin, M; Potrebenikova, E; Potukuchi, B V K S; Prindle, D; Pruneau, C; Putschke, J; Rai, G; Rakness, G; Raniwala, R; Raniwala, S; Ravel, O; Ray, R L; Razin, S V; Reichhold, D; Reid, J G; Renault, G; Retiere, F; Ridiger, A; Ritter, H G; Roberts, J B; Rogachevski, O V; Romero, J L; Rose, A; Roy, C; Ruan, L J; Sahoo, R; Sakrejda, I; Salur, S; Sandweiss, J; Savin, I; Schambach, J; Scharenberg, R P; Schmitz, N; Schroeder, L S; Schweda, K; Seger, J; Seyboth, P; Shahaliev, E; Shao, M; Shao, W; Sharma, M; Shestermanov, K E; Shimanskii, S S; Singaraju, R N; Simon, F; Skoro, G; Smirnov, N; Snellings, R; Sood, G; Sorensen, P; Sowinski, J; Speltz, J; Spinka, H M; Srivastava, B; Stanislaus, T D S; Stock, R; Stolpovsky, A; Strikhanov, M; Stringfellow, B; Struck, C; Suaide, A A P; Sugarbaker, E; Suire, C; Sumbera, M; Surrow, B; Symons, T J M; Szanto de Toledo, A; Szarwas, P; Tai, A; Takahashi, J; Tang, A H; Thein, D; Thomas, J H; Timoshenko, S; Tokarev, M; Tonjes, M B; Trainor, T A; Trentalange, S; Tribble, R E; Tsai, O; Ullrich, T; Underwood, D G; Van Buren, G; VanderMolen, A M; Varma, R; Vasilevski, I; Vasiliev, A N; Vernet, R; Vigdor, S E; Viyogi, Y P; Voloshin, S A; Vznuzdaev, M; Waggoner, W; Wang, F; Wang, G; Wang, G; Wang, X L; Wang, Y; Wang, Z M; Ward, H; Watson, J W; Webb, J C; Wells, R; Westfall, G D; Whitten, C; Wieman, H; Willson, R; Wissink, S W; Witt, R; Wood, J; Wu, J; Xu, N; Xu, Z; Xu, Z Z; Yamamoto, E; Yepes, P; Yurevich, V I; Yuting, B; Zanevski, Y V; Zhang, H; Zhang, W M; Zhang, Z P; Zhaomin, Z P; Zizong, Z P; Zołnierczuk, P A; Zoulkarneev, R; Zoulkarneeva, J; Zubarev, A N

    2004-03-05

    We report results on rho(770)(0)-->pi(+)pi(-) production at midrapidity in p+p and peripheral Au+Au collisions at sqrt[s(NN)]=200 GeV. This is the first direct measurement of rho(770)(0)-->pi(+)pi(-) in heavy-ion collisions. The measured rho(0) peak in the invariant mass distribution is shifted by approximately 40 MeV/c(2) in minimum bias p+p interactions and approximately 70 MeV/c(2) in peripheral Au+Au collisions. The rho(0) mass shift is dependent on transverse momentum and multiplicity. The modification of the rho(0) meson mass, width, and shape due to phase space and dynamical effects are discussed.

  9. Muonic molecular ions p p μ and p d μ driven by superintense VUV laser pulses: Postexcitation muonic and nuclear oscillations and high-order harmonic generation

    NASA Astrophysics Data System (ADS)

    Paramonov, Guennaddi K.; Saalfrank, Peter

    2018-05-01

    The non-Born-Oppenheimer quantum dynamics of p p μ and p d μ molecular ions excited by ultrashort, superintense VUV laser pulses polarized along the molecular axis (z ) is studied by the numerical solution of the time-dependent Schrödinger equation within a three-dimensional (3D) model, including the internuclear distance R and muon coordinates z and ρ , a transversal degree of freedom. It is shown that in both p p μ and p d μ , muons approximately follow the applied laser field out of phase. After the end of the laser pulse, expectation values , <ρ > , and demonstrate "post-laser-pulse" oscillations in both p p μ and p d μ . In the case of p d μ , the post-laser-pulse oscillations of and appear as shaped "echo pulses." Power spectra, which are related to high-order harmonic generation (HHG), generated due to muonic and nuclear motion are calculated in the acceleration form. For p d μ it is found that there exists a unique characteristic frequency ωoscp d μ representing both frequencies of post-laser-pulse muonic oscillations and the frequency of nuclear vibrations, which manifest themselves by very sharp maxima in the corresponding power spectra of p d μ . The homonuclear p p μ ion does not possess such a unique characteristic frequency. The "exact" dynamics and power, and HHG spectra of the 3D model are compared with a Born-Oppenheimer, fixed-nuclei model featuring interesting differences: postpulse oscillations are absent and HHG spectra are affected indirectly or directly by nuclear motion.

  10. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aleshkin, V. Ya.; Dikareva, N. V.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru

    2015-02-15

    A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

  11. High-temperature specific heat of Bi2GeO5 and SmBiGeO5 compounds

    NASA Astrophysics Data System (ADS)

    Denisova, L. T.; Belousova, N. V.; Galiakhmetova, N. A.; Denisov, V. M.; Zhereb, V. P.

    2017-08-01

    The SmBiGeO5 compound is synthesized from Sm2O3, Bi2O3, and GeO2 by solid-state synthesis with subsequent annealing at 1003, 1073, 1123, 1143, 1173, and 1223 K. The metastable Bi2GeO5 compound is prepared from melt. Temperature dependences of specific heat of Bi2GeO5 (350-1000 K) and SmBiGeO5 (370-1000 K) are measured by differential scanning calorimetry. Basing on the experimental dependences C P = f( T), the thermodynamic functions of the oxide compounds are calculated.

  12. Quantum radiation reaction in laser-electron-beam collisions.

    PubMed

    Blackburn, T G; Ridgers, C P; Kirk, J G; Bell, A R

    2014-01-10

    It is possible using current high-intensity laser facilities to reach the quantum radiation reaction regime for energetic electrons. An experiment using a wakefield accelerator to drive GeV electrons into a counterpropagating laser pulse would demonstrate the increase in the yield of high-energy photons caused by the stochastic nature of quantum synchrotron emission: we show that a beam of 10(9) 1 GeV electrons colliding with a 30 fs laser pulse of intensity 10(22)  W cm(-2) will emit 6300 photons with energy greater than 700 MeV, 60× the number predicted by classical theory.

  13. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lin, Chung-Yi; Chang, Chih-Chiang; Huang, Chih-Hsiung

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layermore » through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.« less

  14. Der evolutionäre Naturalismus in der Ethik

    NASA Astrophysics Data System (ADS)

    Kaiser, Marie I.

    Charles Darwin hat eindrucksvoll gezeigt, dass der Mensch ebenso wie alle anderen Lebewesen ein Produkt der biologischen Evolution ist. Die sich an Darwin anschließende Forschung hat außerdem plausibel gemacht, dass sich nicht nur viele der körperlichen Merkmale des Menschen, sondern auch (zumindest einige) seiner Verhaltensdispositionen in adaptiven Selektionsprozessen herausgebildet haben. Die Vorstellung, dass auch die menschliche Moralität evolutionär bedingt ist, scheint daher auf den ersten Blick ganz überzeugend. Schließlich hat die Evolutionstheorie in den vergangenen Jahrzehnten in vielen Bereichen (auch außerhalb der Biologie) ihre weitreichende Bedeutung unter Beweis gestellt. Warum sollte, so könnte man beispielsweise fragen, gerade die Fähigkeit des Menschen, moralische Normen aufzustellen und gemäß ihnen zu handeln, nicht evolutionär erklärt werden können? Und warum sollte eine solche evolutionäre Erklärung der menschlichen Moralität irrelevant für die Rechtfertigung moralischer Normen sein? Warum sollte die Ethik eine Bastion der Philosophen bleiben, für die evolutionsbiologische Forschungsergebnisse über den Menschen und seine nächsten Verwandten keinerlei Relevanz besitzen?

  15. Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2016-05-01

    Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

  16. Evaluation der zentralen TUM-Lernplattform

    NASA Astrophysics Data System (ADS)

    Schulze, Elvira; Baume, Matthias; Graf, Stephan; Gergintchev, Ivan

    Die Notwendigkeit der Qualitätssicherung und -kontrolle für innovative universitäre Lehr-/Lernszenarien ist in der Praxis unbestritten. Die Wirksamkeit der Einführung der zentralen Lernplattform CLIX Campus der imc AG an der TUM wurde mittels quantitativer und qualitativer Evaluation überprüft. Als statistische Bewertungsgrundlage wurde der Erreichungsgrad bestimmter Projektziele herangezogen. Aufbauend auf den theoretischen Grundlagen der Evaluation von Bildungsangeboten gibt diese Studie Aufschluss über die Ergebnisse der Datenerhebungen sowie die Einschätzung der Plattform aus Nutzersicht und belegt die wesentliche Bedeutung der durchgängigen IT-Infrastruktur und speziell der einheitlichen Verfügbarkeit der eLearning Angebote.

  17. Moments of the spin structure functions g1p and g1d for 0.05GeV

    NASA Astrophysics Data System (ADS)

    Clas Collaboration; Prok, Y.; Bosted, P.; Burkert, V. D.; Deur, A.; Dharmawardane, K. V.; Dodge, G. E.; Griffioen, K. A.; Kuhn, S. E.; Minehart, R.; Adams, G.; Amaryan, M. J.; Anghinolfi, M.; Asryan, G.; Audit, G.; Avakian, H.; Bagdasaryan, H.; Baillie, N.; Ball, J. P.; Baltzell, N. A.; Barrow, S.; Battaglieri, M.; Beard, K.; Bedlinskiy, I.; Bektasoglu, M.; Bellis, M.; Benmouna, N.; Berman, B. L.; Biselli, A. S.; Blaszczyk, L.; Boiarinov, S.; Bonner, B. E.; Bouchigny, S.; Bradford, R.; Branford, D.; Briscoe, W. J.; Brooks, W. K.; Bültmann, S.; Butuceanu, C.; Calarco, J. R.; Careccia, S. L.; Carman, D. S.; Casey, L.; Cazes, A.; Chen, S.; Cheng, L.; Cole, P. L.; Collins, P.; Coltharp, P.; Cords, D.; Corvisiero, P.; Crabb, D.; Crede, V.; Cummings, J. P.; Dale, D.; Dashyan, N.; de Masi, R.; de Vita, R.; de Sanctis, E.; Degtyarenko, P. V.; Denizli, H.; Dennis, L.; Dhuga, K. S.; Dickson, R.; Djalali, C.; Doughty, D.; Dugger, M.; Dytman, S.; Dzyubak, O. P.; Egiyan, H.; Egiyan, K. S.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fatemi, R.; Fedotov, G.; Feldman, G.; Fersh, R. G.; Feuerbach, R. J.; Forest, T. A.; Fradi, A.; Funsten, H.; Garçon, M.; Gavalian, G.; Gevorgyan, N.; Gilfoyle, G. P.; Giovanetti, K. L.; Girod, F. X.; Goetz, J. T.; Golovatch, E.; Gothe, R. W.; Guidal, M.; Guillo, M.; Guler, N.; Guo, L.; Gyurjyan, V.; Hadjidakis, C.; Hafidi, K.; Hakobyan, H.; Hanretty, C.; Hardie, J.; Hassall, N.; Heddle, D.; Hersman, F. W.; Hicks, K.; Hleiqawi, I.; Holtrop, M.; Huertas, M.; Hyde-Wright, C. E.; Ilieva, Y.; Ireland, D. G.; Ishkhanov, B. S.; Isupov, E. L.; Ito, M. M.; Jenkins, D.; Jo, H. S.; Johnstone, J. R.; Joo, K.; Juengst, H. G.; Kalantarians, N.; Keith, C. D.; Kellie, J. D.; Khandaker, M.; Kim, K. Y.; Kim, K.; Kim, W.; Klein, A.; Klein, F. J.; Klusman, M.; Kossov, M.; Krahn, Z.; Kramer, L. H.; Kubarovsky, V.; Kuhn, J.; Kuleshov, S. V.; Kuznetsov, V.; Lachniet, J.; Laget, J. M.; Langheinrich, J.; Lawrence, D.; Li, Ji; Lima, A. C. S.; Livingston, K.; Lu, H. Y.; Lukashin, K.; MacCormick, M.; Marchand, C.; Markov, N.; Mattione, P.; McAleer, S.; McKinnon, B.; McNabb, J. W. C.; Mecking, B. A.; Mestayer, M. D.; Meyer, C. A.; Mibe, T.; Mikhailov, K.; Mirazita, M.; Miskimen, R.; Mokeev, V.; Morand, L.; Moreno, B.; Moriya, K.; Morrow, S. A.; Moteabbed, M.; Mueller, J.; Munevar, E.; Mutchler, G. S.; Nadel-Turonski, P.; Nasseripour, R.; Niccolai, S.; Niculescu, G.; Niculescu, I.; Niczyporuk, B. B.; Niroula, M. R.; Niyazov, R. A.; Nozar, M.; O'Rielly, G. V.; Osipenko, M.; Ostrovidov, A. I.; Park, K.; Pasyuk, E.; Paterson, C.; Pereira, S. Anefalos; Philips, S. A.; Pierce, J.; Pivnyuk, N.; Pocanic, D.; Pogorelko, O.; Popa, I.; Pozdniakov, S.; Preedom, B. M.; Price, J. W.; Procureur, S.; Protopopescu, D.; Qin, L. M.; Raue, B. A.; Riccardi, G.; Ricco, G.; Ripani, M.; Ritchie, B. G.; Rosner, G.; Rossi, P.; Rowntree, D.; Rubin, P. D.; Sabatié, F.; Salamanca, J.; Salgado, C.; Santoro, J. P.; Sapunenko, V.; Schumacher, R. A.; Seely, M. L.; Serov, V. S.; Sharabian, Y. G.; Sharov, D.; Shaw, J.; Shvedunov, N. V.; Skabelin, A. V.; Smith, E. S.; Smith, L. C.; Sober, D. I.; Sokhan, D.; Stavinsky, A.; Stepanyan, S. S.; Stepanyan, S.; Stokes, B. E.; Stoler, P.; Strakovsky, I. I.; Strauch, S.; Suleiman, R.; Taiuti, M.; Tedeschi, D. J.; Tkabladze, A.; Tkachenko, S.; Todor, L.; Ungaro, M.; Vineyard, M. F.; Vlassov, A. V.; Watts, D. P.; Weinstein, L. B.; Weygand, D. P.; Williams, M.; Wolin, E.; Wood, M. H.; Yegneswaran, A.; Yun, J.; Zana, L.; Zhang, J.; Zhao, B.; Zhao, Z. W.

    2009-02-01

    The spin structure functions g for the proton and the deuteron have been measured over a wide kinematic range in x and Q using 1.6 and 5.7 GeV longitudinally polarized electrons incident upon polarized NH3 and ND3 targets at Jefferson Lab. Scattered electrons were detected in the CEBAF Large Acceptance Spectrometer, for 0.05GeV and W<3 GeV. The first moments of g for the proton and deuteron are presented - both have a negative slope at low Q, as predicted by the extended Gerasimov-Drell-Hearn sum rule. The first extraction of the generalized forward spin polarizability of the proton γ0p is also reported. This quantity shows strong Q dependence at low Q. Our analysis of the Q evolution of the first moment of g shows agreement in leading order with Heavy Baryon Chiral Perturbation Theory. However, a significant discrepancy is observed between the γ0p data and Chiral Perturbation calculations for γ0p, even at the lowest Q.

  18. H2MBH2 and M(μ-H)2BH2 Molecules Isolated in Solid Argon: Interelement M-B and M-H-B Bonds (M = Ge, Sn).

    PubMed

    Zhao, Jie; Beckers, Helmut; Huang, Tengfei; Wang, Xuefeng; Riedel, Sebastian

    2018-02-19

    Laser-ablated boron atoms react with GeH 4 molecules to form novel germylidene borane H 2 GeBH 2 , which undergoes a photochemical rearrangement to the germanium tetrahydroborate Ge(μ-H) 2 BH 2 upon irradiation with light of λ = 405 nm. For comparison, the boron atom reactions with SnH 4 only gave the tin tetrahydroborate Sn(μ-H) 2 BH 2 . Infrared matrix-isolation spectroscopy with deuterium substitution and the state-of-the-art quantum-chemical calculations are used to identify these species in solid argon. A planar structure of H 2 GeBH 2 with an electron-deficient B-Ge bond with a partial multiple bond character (bond order = 1.5) is predicted by quantum-chemical calculations. In the case of M(μ-H) 2 BH 2 (M = Ge, Sn) two 3c-2e B-H-M hydrogen bridged bonds are formed by donation of electrons from the B-H σ-bonds into empty p-orbitals of M.

  19. Vibration-rotation-tunneling spectroscopy of the van der Waals Bond: A new look at intermolecular forces

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cohen, R.C.; Saykally, R.J.

    Measurements of the low-frequency van der Waals vibrations in weakly bound complexes by high-resolution laser spectroscopy provide a means to probe intermolecular forces at unprecedented levels of detail and precision. Several new methods are presently being used to record vibration/rotation-tunneling (VRT) transitions associated with the motions of the weak bonds in van der Waals clusters. The most direct measurements are those probing only the van der Waals modes themselves, which occur at far-infrared wavelengths. This article presents a review of the information on both intramolecular forces and intramolecular dynamics that has been obtained from far-infrared VRT spectra of 18 complexesmore » during the past several years. Some rotationally resolved measurements of van der Waals modes observed in combination with electronic or vibrational excitation are also discussed. 185 refs., 15 figs., 1 tab.« less

  20. Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

    NASA Technical Reports Server (NTRS)

    Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

    2002-01-01

    Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

  1. Ferromagnetic germanide in Ge nanowire transistors for spintronics application.

    PubMed

    Tang, Jianshi; Wang, Chiu-Yen; Hung, Min-Hsiu; Jiang, Xiaowei; Chang, Li-Te; He, Liang; Liu, Pei-Hsuan; Yang, Hong-Jie; Tuan, Hsing-Yu; Chen, Lih-Juann; Wang, Kang L

    2012-06-26

    To explore spintronics applications for Ge nanowire heterostructures formed by thermal annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature and take advantage of the high-quality interface between Ge and the formed ferromagnetic germanide. In this work, we report, for the first time, the formation and characterization of Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire transistors, in which the room-temperature ferromagnetic germanide was found through the solid-state reaction between a single-crystalline Ge nanowire and Mn contact pads upon thermal annealing. The atomically clean interface between Mn(5)Ge(3) and Ge with a relatively small lattice mismatch of 10.6% indicates that Mn(5)Ge(3) is a high-quality ferromagnetic contact to Ge. Temperature-dependent I-V measurements on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire heterostructure reveal a Schottky barrier height of 0.25 eV for the Mn(5)Ge(3) contact to p-type Ge. The Ge nanowire field-effect transistors built on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) heterostructure exhibit a high-performance p-type behavior with a current on/off ratio close to 10(5), and a hole mobility of 150-200 cm(2)/(V s). Temperature-dependent resistance of a fully germanided Mn(5)Ge(3) nanowire shows a clear transition behavior near the Curie temperature of Mn(5)Ge(3) at about 300 K. Our findings of the high-quality room-temperature ferromagnetic Mn(5)Ge(3) contact represent a promising step toward electrical spin injection into Ge nanowires and thus the realization of high-efficiency spintronic devices for room-temperature applications.

  2. Silane and germane plasma diagnostics for depositing photosensitive a-SiGe:H films

    NASA Technical Reports Server (NTRS)

    Shing, Y. H.; Perry, J. W.; Allevato, C. E.

    1988-01-01

    Highly photosensitive a-SiGe:H films with a light-to-dark conductivity ratio of 8 x 103 and an optical bandgap of 1.40 eV have been produced by RF glow discharge using hydrogen dilution of SiH4 and GeH4 mixed gas plasma. The critical role of hydrogen dilution in GeH4 containing plasmas is to suppress the gas-phase polymerization and promote the incorporation of Ge into the film. It is observed that inelastic laser light scattering of the RF plasma is a sensitive method for monitoring the onset of the gas-phase polymerization. In situ coherent anti-Stokes Raman spectroscopy measurements have shown that the dissociation rate of GeH4 is a factor of three larger than that of SiH4.

  3. EDITORIAL: Laser and plasma accelerators Laser and plasma accelerators

    NASA Astrophysics Data System (ADS)

    Bingham, Robert

    2009-02-01

    This special issue on laser and plasma accelerators illustrates the rapid advancement and diverse applications of laser and plasma accelerators. Plasma is an attractive medium for particle acceleration because of the high electric field it can sustain, with studies of acceleration processes remaining one of the most important areas of research in both laboratory and astrophysical plasmas. The rapid advance in laser and accelerator technology has led to the development of terawatt and petawatt laser systems with ultra-high intensities and short sub-picosecond pulses, which are used to generate wakefields in plasma. Recent successes include the demonstration by several groups in 2004 of quasi-monoenergetic electron beams by wakefields in the bubble regime with the GeV energy barrier being reached in 2006, and the energy doubling of the SLAC high-energy electron beam from 42 to 85 GeV. The electron beams generated by the laser plasma driven wakefields have good spatial quality with energies ranging from MeV to GeV. A unique feature is that they are ultra-short bunches with simulations showing that they can be as short as a few femtoseconds with low-energy spread, making these beams ideal for a variety of applications ranging from novel high-brightness radiation sources for medicine, material science and ultrafast time-resolved radiobiology or chemistry. Laser driven ion acceleration experiments have also made significant advances over the last few years with applications in laser fusion, nuclear physics and medicine. Attention is focused on the possibility of producing quasi-mono-energetic ions with energies ranging from hundreds of MeV to GeV per nucleon. New acceleration mechanisms are being studied, including ion acceleration from ultra-thin foils and direct laser acceleration. The application of wakefields or beat waves in other areas of science such as astrophysics and particle physics is beginning to take off, such as the study of cosmic accelerators considered

  4. Der neue Kosmos

    NASA Astrophysics Data System (ADS)

    Unsöld, Albrecht; Baschek, Bodo

    Astronomie, Astrophysik und Weltraumforschung haben innerhalb weniger Jahrzehnte eine geradezu explosive Entwicklung genommen. Die neuen Beobachtungsmöglichkeiten durch die Raumfahrt, die Entwicklung hochempfindlicher Lichtdetektoren und der Einsatz leistungsstarker Computer haben uns neuartige Aspekte in der faszinierenden Welt der Galaxien und Quasare, der Sterne und Planeten erschlossen. Nachdem die dritte Auflage vergriffen ist, trägt die vorliegende vierte, völlig neubearbeitete Auflage des NEUEN KOSMOS dieser stürmischen Entwicklung Rechnung. In überschaubarem Umfang wird - bei bescheidenen Ansprüchen an die mathematisch-naturwissenschaftliche Vorbildung des Lesers - eine zusammenhängende Einführung in das Gesamtgebiet der Astronomie und Astrophysik gegeben, welche die Beobachtungen und die Grundgedanken ihrer theoretischen Deutung in gleicher Weise berücksichtigt. Auch in seiner neuen Gestalt wird der NEUE KOSMOS den Studenten und Forschern in Bereichen der Astronomie, Physik und Geowissenschaften sowie einem weiten Kreis ernsthaft interessierter Amateure viel Neues und viel Freude bringen.

  5. Dipole Resonances of 76Ge

    NASA Astrophysics Data System (ADS)

    Ilieva, R. S.; Cooper, N.; Werner, V.; Rusev, G.; Pietralla, N.; Kelly, J. H.; Tornow, W.; Yates, S. W.; Crider, B. P.; Peters, E.

    2013-10-01

    Dipole resonances in 76Ge have been studied using the method of Nuclear Resonance Fluorescence (NRF). The experiment was performed using the Free Electron Laser facility at HI γS/TUNL, which produced linearly polarised quasi-monoenergetic photons in the 4-9 MeV energy range. Photon strength, in particular dipole strength, is an important ingredient in nuclear reaction calculations, and recent interest in its study has been stimulated by observations of a pygmy dipole resonance near the neutron separation energy Sn of certain nuclei. Furthermore, 76Ge is a candidate for 0 ν 2 β -decay. The results are complimentary to a relevant experiment done at TU Darmstadt using Bremsstrahlung beams. Single-resonance parities and a preliminary estimate of the total photo-excitation cross section will be presented. This work was supported by the U.S. DOE under grant no. DE-FG02-91ER40609.

  6. The Bose-Einstein correlations in deep inelastic μ p interactions at 280 GeV

    NASA Astrophysics Data System (ADS)

    Arneodo, M.; Arvidson, A.; Aubert, J. J.; Badelek, B.; Beaufays, J.; Bee, C. P.; Benchouk, C.; Berghoff, G.; Bird, I.; Blum, D.; Böhm, E.; de Bouard, X.; Brasse, F. W.; Braun, H.; Broll, C.; Brown, S.; Brück, H.; Calen, H.; Chima, J. S.; Ciborowski, J.; Cliftt, R.; Coignet, G.; Combley, F.; Coughlan, J.; D'Agostini, G.; Dahlgren, S.; Dengler, F.; Derado, I.; Dreyer, T.; Drees, J.; Düren, M.; Eckardt, V.; Edwards, A.; Edwards, M.; Ernst, T.; Eszes, G.; Favier, J.; Ferrero, M. I.; Figiel, J.; Flauger, W.; Foster, J.; Gabathuler, E.; Gajewski, J.; Gamet, R.; Gayler, J.; Geddes, N.; Grafström, P.; Grard, F.; Haas, J.; Hagberg, E.; Hasert, F. J.; Hayman, P.; Heusse, P.; Jaffre, M.; Jacholkowska, A.; Janata, F.; Jancso, G.; Johnson, A. S.; Kabuss, E. M.; Kellner, G.; Korbel, V.; Krüger, J.; Kullander, S.; Landgraf, U.; Lanske, D.; Loken, J.; Long, K.; Maire, M.; Malecki, P.; Manz, A.; Maselli, S.; Mohi, W.; Montanet, F.; Montgomery, H. E.; Nagy, E.; Nassalski, J.; Norton, P. R.; Oakham, F. G.; Osborne, A. M.; Osborne, L. S.; Pascaud, C.; Pawlik, B.; Payre, P.; Peroni, C.; Peschel, H.; Pessard, H.; Pettingale, J.; Pietrzyk, B.; Pönsgen, B.; Pötsch, M.; Renton, P.; Ribarics, P.; Rith, K.; Rondio, E.; Sandacz, A.; Scheer, M.; Schlagböhmer, A.; Schiemann, H.; Schmitz, N.; Schneegans, M.; Sholz, M.; Schröder, T.; Schouten, M.; Schultze, K.; Sloan, T.; Stier, H. E.; Studt, M.; Taylor, G. N.; Thenard, J. M.; Thompson, J. C.; de La Torre, A.; Toth, J.; Urban, L.; Urban, L.; Wallucks, W.; Whalley, M.; Wheeler, S.; Williams, W. S. C.; Wimpenny, S. J.; Windmolders, R.; Wolf, G.

    1986-03-01

    The Bose-Einstein correlation has been observed for pions in deep inelastic μ p interactions at 280 GeV. The importance of non-interference correlations in the sample of like charge pion pairs and in the sample used for reference is discussed. The pion emission region is found to be roughly spherical in the pair rest frame with a radius of 0.46 0.84 fm and the chaos factor λ is 0.60 1.08.

  7. Measurement of dielectron continuum in p + p at sqrt(s) = 200 GeV as a baseline study for chiral symmetry restoration

    NASA Astrophysics Data System (ADS)

    Rolnick, Sky Deva

    Dielectrons are a very important probe used for studying the properties of hot dense nuclear matter created in heavy ion collisions. Since dielectrons are color neutral and produced during all stages of the collision, they provide access to an abundance of information not readily available from other sources. These include thermal sources, vector meson resonances, heavy charm and bottom decay, and Drell-Yan processes. Previous measurements of the dielectron continuum in PHENIX have indicated an unexpectedly large enhancement in Au+Au collisions in the low mass region (0.3 - 0.8GeV/c2), a possible signal of chiral symmetry restoration, but these measurements were limited by large systematic uncertainties primarily from a poor signal to background ratio. In 2009 the PHENIX experiment was upgraded with the addition of the Hadron Blind Detector which improves the background rejection by detecting partially reconstructed Dalitz decays and gamma conversion pairs. In this thesis, I will review the status of electromagnetic probes measured from the collision of heavy nuclei and present and compare the results obtained from 2009 data in p + p at 200 GeV using the HBD which will serve as a baseline for Au+Au results obtained in 2010.

  8. Das Smart Meter Gateway - Der kritische Erfolgsfaktor für die Digitalisierung der Energiewende

    NASA Astrophysics Data System (ADS)

    Abs, Paul-Vincent

    Der kritische Erfolgsfaktor der Digitalisierung in der Energiewirtschaft liegt im bevorstehenden hohen Investitionsvolumen und der Beherrschung der neuen Technik. Ein Weg zur Kostenminimierung liegt im Zusammenschluss der einzelnen Akteure, um gemeinsame Skalenvorteile zu heben. Auch bieten neue Geschäftsmodelle die Möglichkeit, zusätzliche Erlöse zu generieren.

  9. An insight into intrinsic interfacial properties between Li metals and Li10GeP2S12 solid electrolytes.

    PubMed

    Chen, Bingbing; Ju, Jiangwei; Ma, Jun; Zhang, Jianjun; Xiao, Ruijuan; Cui, Guanglei; Chen, Liquan

    2017-11-29

    Density functional theory simulations and experimental studies were performed to investigate the interfacial properties, including lithium ion migration kinetics, between lithium metal anode and solid electrolyte Li 10 GeP 2 S 12 (LGPS). The LGPS[001] plane was chosen as the studied surface because the easiest Li + migration pathway is along this direction. The electronic structure of the surface states indicated that the electrochemical stability was reduced at both the PS 4 - and GeS 4 -teminated surfaces. For the interface cases, the equilibrium interfacial structures of lithium metal against the PS 4 -terminated LGPS[001] surface (Li/PS 4 -LGPS) and the GeS 4 -terminated LGPS[001] surface (Li/GeS 4 -LGPS) were revealed based on the structural relaxation and adhesion energy analysis. Solid electrolyte interphases were expected to be formed at both Li/PS 4 -LGPS and Li/GeS 4 -LGPS interfaces, resulting in an unstable state of interface and large interfacial resistance, which was verified by the EIS results of the Li/LGPS/Li cell. In addition, the simulations of the migration kinetics show that the energy barriers for Li + crossing the Li/GeS 4 -LGPS interface were relatively low compared with the Li/PS 4 -LGPS interface. This may contribute to the formation of Ge-rich phases at the Li/LGPS interface, which can tune the interfacial structures to improve the ionic conductivity for future all-solid-state batteries. This work will offer a thorough understanding of the Li/LGPS interface, including local structures, electronic states and Li + diffusion behaviors in all-solid-state batteries.

  10. Neodymium-yttrium aluminum garnet laser versus pulsed dye laser in erythemato-telangiectatic rosacea: comparison of clinical efficacy and effect on cutaneous substance (P) expression.

    PubMed

    Salem, Samar Abdallah M; Abdel Fattah, Nermeen S A; Tantawy, Samah M A; El-Badawy, Nafissa M A; Abd El-Aziz, Yasser A

    2013-09-01

    Different laser systems are reported to be effective in treatment of telangiectasia and erythema, but comparative studies on 1064-nm neodymium-yttrium aluminum garnet (Nd-YAG) laser and pulsed dye laser (PDL) in treatment of erythemato-telangiectatic rosacea are lacking. Substance (P) is implicated in rosacea pathogenesis. To compare the effect of Nd-YAG laser and PDL on erythemato-telangiectatic rosacea, both clinically and immunohistochemically on cutaneous substance (P) expression. This split-face comparative study included 15 patients with erythemato-telangiectatic rosacea treated on the right side with Nd-YAG laser and on the left side with PDL: three sessions, 4 weeks apart. Evaluation of the patients was done using erythema and telangiectasia grading scores, patient's self-assessment, physicians' clinical assessment of the patient, and immunohistochemical assessment of substance (P). One month after the three laser sessions, excellent response was achieved in 73.3% of patients after Nd-YAG and in 53.3% of patients after PDL with significantly lower substance (P) concentration after Nd-YAG laser than after PDL. Positive correlations were found between the decrease in erythema and telangiectasia grading scores and the decrease in substance (P) concentration. The use of Nd-YAG laser and PDL appears to be safe and effective measures in treatment of erythemato-telangiectatic rosacea. Both types of laser decrease the concentration of substance (P) in the skin. This effect is more pronounced with Nd-YAG laser. © 2013 Wiley Periodicals, Inc.

  11. Energy dependence of p¯/p ratio in p+p collisions

    NASA Astrophysics Data System (ADS)

    Singha, Subhash; Netrakanti, Pawan Kumar; Kumar, Lokesh; Mohanty, Bedangadas

    2010-10-01

    We compiled the experimentally measured p¯/p ratio at midrapidity in p+p collisions from s=23 to 7000 GeV and compared it to various mechanisms of baryon production as implemented in the pythia, phojet, and Heavy Ion Jet Interaction Generator (HIJING)/B-B¯ models. For the models studied with default settings, phojet has the best agreement with the measurements, pythia gives a higher value for s<200 GeV, and the ratios from HIJING/B-B¯ are consistently lower for all the s studied. A comparison of the data to different mechanisms of baryon production as implemented in pythia shows that through a suitable tuning of the suppression of diquark-antidiquark pair production in the color field relative to quark-antiquark production and allowing the diquarks to split according to the popcorn scheme, a fairly reasonable description of the measured p¯/p ratio for s<200 GeV is given. A comparison of the beam energy dependence of the p¯/p ratio in p+p and nucleus-nucleus (A + A) collisions at midrapidity shows that the baryon production is significantly more for A + A collisions relative to p+p collisions for s<200 GeV. We also carry out a phenomenological fit to the ybeam dependence of the p¯/p ratio.

  12. Estimation of Airborne Radioactivity Induced by 8-GeV-Class Electron LINAC Accelerator.

    PubMed

    Asano, Yoshihiro

    2017-10-01

    Airborne radioactivity induced by high-energy electrons from 6 to 10 GeV is estimated by using analytical methods and the Monte Carlo codes PHITS and FLUKA. Measurements using a gas monitor with a NaI(Tl) scintillator are carried out in air from a dump room at SACLA, an x-ray free-electron laser facility with 7.8-GeV electrons and are compared to the simulations.

  13. Detection Of Gas-Phase Polymerization in SiH4 And GeH4

    NASA Technical Reports Server (NTRS)

    Shing, Yuh-Han; Perry, Joseph W.; Allevato, Camillo E.

    1990-01-01

    Inelastic scattering of laser light found to indicate onset of gas-phase polymerization in plasma-enhanced chemical-vapor deposition (PECVD) of photoconductive amorphous hydrogenated silicon/germanium alloy (a-SiGe:H) film. In PECVD process, film deposited from radio-frequency glow-discharge plasma of silane (SiH4) and germane (GeH4) diluted with hydrogen. Gas-phase polymerization undesirable because it causes formation of particulates and defective films.

  14. Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe $${p}$$ MOSFETs

    DOE PAGES

    Duan, Guo Xing; Hachtel, Jordan A.; Zhang, En Xia; ...

    2016-09-20

    In this paper, we have measured the low-frequency 1/f noise of Si 0.55Ge 0.45 pMOSFETs with a Si capping layer and SiO 2/HfO 2/TiN gate stack as a function of frequency, gate voltage, and temperature (100-440 K). The magnitude of the excess drain voltage noise power spectral density (Svd) is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise at higher measuring temperatures is attributed primarily to oxygen-vacancy and hydrogen-related defects in the SiO 2 and HfO 2more » layers. Finally, at lower measuring temperatures, the noise also appears to be affected strongly by hydrogen-dopant interactions in the SiGe layer of the device.« less

  15. Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

    NASA Astrophysics Data System (ADS)

    Boninelli, S.; Milazzo, R.; Carles, R.; Houdellier, F.; Duffy, R.; Huet, K.; La Magna, A.; Napolitani, E.; Cristiano, F.

    2018-05-01

    Laser Thermal Annealing (LTA) at various energy densities was used to recrystallize and activate amorphized germanium doped with phosphorous by ion implantation. The structural modifications induced during the recrystallization and the related dopant diffusion were first investigated. After LTA at low energy densities, the P electrical activation was poor while the dopant distribution was mainly localized in the polycrystalline Ge resulting from the anneal. Conversely, full dopant activation (up to 1 × 1020 cm-3) in a perfectly recrystallized material was observed after annealing at higher energy densities. Measurements of lattice parameters performed on the fully activated structures show that P doping results in a lattice expansion, with a perpendicular lattice strain per atom βPs = +0.7 ± 0.1 Å3. This clearly indicates that, despite the small atomic radius of P compared to Ge, the "electronic contribution" to the lattice parameter modification (due to the increased hydrostatic deformation potential in the conduction band of P doped Ge) is larger than the "size mismatch contribution" associated with the atomic radii. Such behavior, predicted by theory, is observed experimentally for the first time, thanks to the high sensitivity of the measurement techniques used in this work.

  16. Remote Substituent Effects on the Structures and Stabilities of P═E π-Stabilized Diphosphatetrylenes (R2P)2E (E = Ge, Sn).

    PubMed

    Izod, Keith; Evans, Peter; Waddell, Paul G; Probert, Michael R

    2016-10-17

    A rare P-E π interaction between the lone pair of a planar P center and the vacant p orbital at the Ge or Sn center provides efficient stabilization for P-substituted tetrylenes (R 2 P) 2 E (E = Ge, Sn) and enables isolation of the first example of a compound with a crystallographically authenticated P═Sn bond. Subtle changes in the electronic properties of the bulky aryl substituents in these compounds change the preference for planar versus pyramidal P centers in the solid state; however, variable-temperature NMR spectroscopy indicates that in solution these species are subject to a dynamic equilibrium, which interconverts the planar and pyramidal P centers. Consistent with this, density functional theory studies suggest that there is only a small energy difference between the planar and pyramidal forms of these compounds and reveal a small singlet-triplet energy separation, suggesting potentially interesting reactivities.

  17. GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating.

    PubMed

    Shindo, Takahiko; Okumura, Tadashi; Ito, Hitomi; Koguchi, Takayuki; Takahashi, Daisuke; Atsumi, Yuki; Kang, Joonhyun; Osabe, Ryo; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa

    2011-01-31

    We fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-μm stripe width and 300-μm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.

  18. Multiple collision effects on the antiproton production by high energy proton (100 GeV - 1000 GeV)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Takahashi, Hiroshi; Powell, J.

    Antiproton production rates which take into account multiple collision are calculated using a simple model. Methods to reduce capture of the produced antiprotons by the target are discussed, including geometry of target and the use of a high intensity laser. Antiproton production increases substantially above 150 GeV proton incident energy. The yield increases almost linearly with incident energy, alleviating space charge problems in the high current accelerator that produces large amounts of antiprotons.

  19. Verantwortlicher Umgang mit Antibiotika: Notwendigkeit der Antibiotikareduktion in der Aknetherapie.

    PubMed

    Gollnick, Harald P M; Buer, Jan; Beissert, Stefan; Sunderkätter, Cord

    2016-12-01

    Der übermäßige oder unkritische weltweite Einsatz von Antibiotika in der Medizin hat die Ausbreitung von Antibiotikaresistenzen beschleunigt. In einigen Bereichen sind viele Antibiotika bei bakteriellen Infektionen, die zuvor noch gut auf antibakterielle Wirkstoffe reagierten, mittlerweile wirkungslos geworden. Dermatologen/Venerologen setzten orale und topische Antibiotika bei der Behandlung von Acne vulgaris routinemäßig ein, obwohl Akne weder eine infektiöse Erkrankung ist noch alleine durch das Propionibacterium getriggert wird. Vielmehr ist sie eine komplexe, chronische entzündliche Hauterkrankung, die durch verschiedene pathogenetische Faktoren wie follikuläre Hyperkeratose, erhöhter Sebumproduktion, bakterielle Proliferation und Entzündung zustande kommt. Folglich sollte eine erfolgreiche Therapie auf die Bekämpfung verschiedener pathogenetischer Faktoren und nicht nur auf die von Propionibacterium acnes abzielen. Daher wurden topische Retinoide und Benzoylperoxid als Mittel der ersten Wahl definiert. Monotherapien mit lokalen Antibiotika sollten insgesamt vermieden werden. Systemische Antibiotika der Tetrazyklin-Gruppe haben bei bestimmen Krankheitsstadien ihren Sinn, ihre Wirkung könnte aber eher auf der antientzündlichen als auf der antibiotischen Reaktion beruhen. Gesundheitsbehörden ermahnen alle Gesundheitsdienstleister, den Einsatz von Antibiotika einzuschränken. Das Nutzen-Risiko-Verhältnis muss bei der Entscheidung für oder gegen eine antibiotische Therapie bei einem einzelnen Patienten immer auch in Bezug auf das öffentliche Interesse am Erhalt der Wirksamkeit von Antibiotika abgewogen werden. Im Folgenden werden das aktuelle Krankheitskonzept zu Acne vulgaris und die sich daraus ableitenden Konsequenzen für den Einsatz von Antibiotika vorgestellt. © 2016 Deutsche Dermatologische Gesellschaft (DDG). Published by John Wiley & Sons Ltd.

  20. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

    PubMed

    Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

    2017-12-04

    High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

  1. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

    PubMed Central

    2011-01-01

    On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity. PMID:22060172

  2. Spitznävi: unterschiedliche klinische, dermatoskopische und histopathologische Merkmale in der Kindheit.

    PubMed

    Dika, Emi; Neri, Iria; Fanti, Pier Alessandro; Barisani, Alessia; Ravaioli, Giulia Maria; Patrizi, Annalisa

    2017-01-01

    Die Charakterisierung der klinischen Merkmale und des biologischen Potenzials von Spitznävi hat in den letzten Jahrzehnten breites Interesse gefunden. Das Ziel dieser Arbeit ist die Beschreibung der klinischen und dermatoskopischen Merkmale von Spitznävi sowie des klinischen Ergebnisses nach chirurgischer Exzision von Spitznävi in drei pädiatrischen Altersgruppen. Restrospektive Studie zur Analyse von klinischen Merkmalen, videodermatoskopischen Bildern, histopathologischen Diagnosen und Behandlungsergebnissen. Der Grad der Pigmentierung wurde sowohl klinisch als auch histopathologisch beurteilt. Bei 71 Patienten wurden 72 spitzoide Neoplasien entfernt. Videodermatologische Bilder lagen für 41 Patienten vor. Das Muster der Pigmentierung korrelierte signifikant mit dem Alter der Patienten: Hyperpigmentierte Läsionen waren bei Vorschulkindern selten, bei Patienten von 7 bis 12 Jahren und ab 13 Jahren dagegen häufiger. Eine histopathologische Diagnose von atypischen Spitznävi wurde selten durchgeführt. Keiner der Patienten, bei denen ursprünglich ein atypischer Spitznävus diagnostiziert worden war, entwickelte ein Lokalrezidiv oder Metastasen während der anschließenden Nachbeobachtung. Pigmentierte Spitznävi traten im Alter ab 13 Jahren häufiger auf. Die Studie bestätigt andere Berichte über die Altersverteilung von Pigmentierungsmustern und hebt die geringe Anzahl atypischer Spitznävi bei pädiatrischen Patienten hervor sowie das Ausbleiben von Rezidiven bei der langfristigen Nachbeobachtung. © 2017 Deutsche Dermatologische Gesellschaft (DDG). Published by John Wiley & Sons Ltd.

  3. Initial Atomic Motion Immediately Following Femtosecond-Laser Excitation in Phase-Change Materials.

    PubMed

    Matsubara, E; Okada, S; Ichitsubo, T; Kawaguchi, T; Hirata, A; Guan, P F; Tokuda, K; Tanimura, K; Matsunaga, T; Chen, M W; Yamada, N

    2016-09-23

    Despite the fact that phase-change materials are widely used for data storage, no consensus exists on the unique mechanism of their ultrafast phase change and its accompanied large and rapid optical change. By using the pump-probe observation method combining a femtosecond optical laser and an x-ray free-electron laser, we substantiate experimentally that, in both GeTe and Ge_{2}Sb_{2}Te_{5} crystals, rattling motion of mainly Ge atoms takes place with keeping the off-center position just after femtosecond-optical-laser irradiation, which eventually leads to a higher symmetry or disordered state. This very initial rattling motion in the undistorted lattice can be related to instantaneous optical change due to the loss of resonant bonding that characterizes GeTe-based phase change materials. Based on the amorphous structure derived by first-principles molecular dynamics simulation, we infer a plausible ultrafast amorphization mechanism via nonmelting.

  4. Electroproduction of pπ+π- off protons at 0.2GeV2 and 1.3GeV with the CLAS detector

    NASA Astrophysics Data System (ADS)

    Fedotov, G. V.; Mokeev, V. I.; Burkert, V. D.; Elouadrhiri, L.; Golovatch, E. N.; Ishkhanov, B. S.; Isupov, E. L.; Shvedunov, N. V.; Adams, G.; Amaryan, M. J.; Ambrozewicz, P.; Anghinolfi, M.; Asavapibhop, B.; Asryan, G.; Avakian, H.; Baghdasaryan, H.; Baillie, N.; Ball, J. P.; Baltzell, N. A.; Batourine, V.; Battaglieri, M.; Bedlinskiy, I.; Bektasoglu, M.; Bellis, M.; Benmouna, N.; Biselli, A. S.; Bonner, B. E.; Bouchigny, S.; Boiarinov, S.; Bradford, R.; Branford, D.; Brooks, W. K.; Bültmann, S.; Butuceanu, C.; Calarco, J. R.; Careccia, S. L.; Carman, D. S.; Carnahan, B.; Chen, S.; Cole, P. L.; Coltharp, P.; Corvisiero, P.; Crabb, D.; Crannell, H.; Crede, V.; Cummings, J. P.; Dashyan, N. B.; Sanctis, E. De; Vita, R. De; Degtyarenko, P. V.; Denizli, H.; Dennis, L.; Dharmawardane, K. V.; Dickson, R.; Djalali, C.; Dodge, G. E.; Donnelly, J.; Doughty, D.; Dugger, M.; Dytman, S.; Dzyubak, O. P.; Egiyan, H.; Egiyan, K. S.; Eugenio, P.; Fatemi, R.; Feuerbach, R. J.; Forest, T. A.; Funsten, H.; Gavalian, G.; Gevorgyan, N. G.; Gilfoyle, G. P.; Giovanetti, K. L.; Girod, F. X.; Goetz, J. T.; Gothe, R. W.; Griffioen, K. A.; Guidal, M.; Guillo, M.; Guler, N.; Guo, L.; Gyurjyan, V.; Hadjidakis, C.; Hardie, J.; Hassall, N.; Hersman, F. W.; Hicks, K.; Hleiqawi, I.; Holtrop, M.; Hu, J.; Huertas, M.; Hyde, C. E.; Ilieva, Y.; Ireland, D. G.; Ito, M. M.; Jenkins, D.; Jo, H. S.; Joo, K.; Juengst, H. G.; Kellie, J. D.; Khandaker, M.; Kim, K. Y.; Kim, K.; Kim, W.; Klein, A.; Klein, F. J.; Klimenko, A.; Klusman, M.; Krahn, Z.; Kramer, L. H.; Kubarovsky, V.; Kuhn, J.; Kuhn, S. E.; Kuleshov, S.; Lachniet, J.; Laget, J. M.; Langheinrich, J.; Lawrence, D.; Lee, T.; Livingston, K.; Markov, N.; McCracken, M.; McKinnon, B.; McNabb, J. W. C.; Mecking, B. A.; Mestayer, M. D.; Meyer, C. A.; Mibe, T.; Mikhailov, K.; Mineeva, T.; Minehart, R.; Mirazita, M.; Miskimen, R.; Moriya, K.; Morrow, S. A.; Mueller, J.; Mutchler, G. S.; Nadel-Turonski, P.; Nasseripour, R.; Niccolai, S.; Niculescu, G.; Niculescu, I.; Niczyporuk, B. B.; Niyazov, R. A.; O'Rielly, G. V.; Osipenko, M.; Ostrovidov, A. I.; Park, K.; Pasyuk, E.; Paterson, C.; Pierce, J.; Pivnyuk, N.; Pocanic, D.; Pogorelko, O.; Pozdniakov, S.; Price, J. W.; Prok, Y.; Protopopescu, D.; Raue, B. A.; Ricco, G.; Ripani, M.; Ritchie, B. G.; Rosner, G.; Rossi, P.; Rowntree, D.; Rubin, P. D.; Sabatié, F.; Salgado, C.; Santoro, J. P.; Sapunenko, V.; Schumacher, R. A.; Serov, V. S.; Sharabian, Y. G.; Sharov, D.; Shaw, J.; Smith, E. S.; Smith, L. C.; Sober, D. I.; Stavinsky, A.; Stepanyan, S.; Stokes, B. E.; Stoler, P.; Stopani, K.; Strauch, S.; Taiuti, M.; Taylor, S.; Tedeschi, D. J.; Thompson, R.; Tkabladze, A.; Tkachenko, S.; Todor, L.; Tur, C.; Ungaro, M.; Vineyard, M. F.; Vlassov, A. V.; Weinstein, L. B.; Weygand, D. P.; Williams, M.; Wolin, E.; Wood, M. H.; Yegneswaran, A.; Zana, L.; Zhang, J.

    2009-01-01

    This paper reports on the most comprehensive data set obtained on differential and fully integrated cross sections for the process ep→e'pπ+π-. The data were collected with the CLAS detector at Jefferson Laboratory. Measurements were carried out in the as yet unexplored kinematic region of photon virtuality 0.2GeV2 and invariant mass of the final hadron system W from 1.3 to 1.57 GeV. For the first time, nine independent one-fold differential cross sections were determined in each bin of W and Q2 covered by the measurements. A phenomenological analysis of the data allowed us to establish the most significant mechanisms contributing to the reaction. The nonresonant mechanisms account for a major part of cross sections. However, we find sensitivity to s-channel excitations of low-mass nucleon resonances, especially to the N(1440)P11 and N(1520)D13 states in kinematic dependencies of the one-fold differential cross sections.

  5. Verbesserung der Symmetrie von Hirnaufnahmen entlang der Sagittalebene

    NASA Astrophysics Data System (ADS)

    Ens, Konstantin; Wenzel, Fabian; Fischer, Bernd

    Die lokale Symmetrie von Hirnscans entlang der Sagittalebene zu ermitteln und zu modizifieren, ist für eine Reihe neurologischer Anwendungen interessant. Beispielsweise kann der voxelweise Vergleich von rechter und linker Hirnhälfte nur dann Aufschluss über die Lokalisierung von Läsionen geben, wenn durch Transformation ein Hirnscan eine möglichst hohe Symmetrie aufweist. Ein weiteres Anwendungsgebiet ist die Visualisierung von medialen Hirnschnitten, für die die Trennfläche beider Hirnhälfte möglichst eben sein sollte. Diese Arbeit stellt die Entwicklung eines Verfahrens vor, mit dessen Hilfe die Symmetrie von Hirnaufnahmen entlang der Sagittalebene verbessert werden kann. Dies geschieht unter Verwendung von aktiven Konturen, die mit Hilfe einer neuartigen Kostenfunktion gesteuert werden. Experimente am Ende der Arbeit mit strukturellen Kernspinaufnahmen demonstrieren die Leistungsfähigkeit des Verfahrens.

  6. Spectroscopic study of the possibly triaxial transitional nucleus 75Ge

    NASA Astrophysics Data System (ADS)

    Niu, C. Y.; Dai, A. C.; Xu, C.; Hua, H.; Zhang, S. Q.; Wang, S. Y.; Bark, R. A.; Meng, J.; Wang, C. G.; Wu, X. G.; Li, X. Q.; Li, Z. H.; Wyngaardt, S. M.; Zang, H. L.; Chen, Z. Q.; Wu, H. Y.; Xu, F. R.; Ye, Y. L.; Jiang, D. X.; Han, R.; Li, C. G.; Chen, X. C.; Liu, Q.; Feng, J.; Yang, B.; Li, Z. H.; Wang, S.; Sun, D. P.; Liu, C.; Li, Z. Q.; Zhang, N. B.; Guo, R. J.; Li, G. S.; He, C. Y.; Zheng, Y.; Li, C. B.; Chen, Q. M.; Zhong, J.; Zhou, W. K.; Zhu, B. J.; Deng, L. T.; Liu, M. L.; Wang, J. G.; Jones, P.; Lawrie, E. A.; Lawrie, J. J.; Sharpey-Schafer, J. F.; Wiedeking, M.; Majola, S. N. T.; Bucher, T. D.; Dinoko, T.; Magabuka, B.; Makhathini, L.; Mdletshe, L.; Khumalo, N. A.; Shirinda, O.; Sowazi, K.

    2018-03-01

    The collective structures of 75Ge have been studied for the first time via the 74Ge(α ,2 p 1 n )75Ge fusion-evaporation reaction. Two negative-parity bands and one tentative positive-parity band built on the ν p1 /2,ν f5 /2 , and ν g9 /2 states, respectively, are established and compared with the structures in the neighboring N =43 isotones. According to the configuration-constrained potential-energy surface calculations, a shape transition from oblate to prolate along the isotopic chain in odd-A Ge isotopes is suggested to occur at 75Ge. The properties of the bands in 75Ge are analyzed in comparison with the triaxial particle rotor model calculations.

  7. Der Begriff der Verständlichkeit in der modernen Physik (1948).

    PubMed

    Feyerabend, Paul K

    2016-06-01

    This is a critical transcription of Paul Feyerabend's earliest extant essay "Der Begriff der Verständlichkeit in der modernen Physik" (1948) recovered from the European Forum Alpbach archives. In it, Feyerabend defends positivism as a progressive framework for scientific research in certain stages of scientific development. He argues that in physics visualizability (Anschaulichkeit) and intelligibility (Verständlichkeit) are time-conditioned concepts: what is deemed visualizable in the development of physical theories is relative to a specific historical context and changes over time. He concludes that from time to time the abandonment of visualizability is crucial for progress in physics, as it is conducive to major theory change, illustrating the point on the basis of advances in atomic theory. Copyright © 2015 Elsevier Ltd. All rights reserved.

  8. Implantate in der Augenheilkunde

    NASA Astrophysics Data System (ADS)

    Dresp, Joachim H.

    Im Bereich der Augenheilkunde findet sich die weltweit am häufigsten ausgeführte chirurgische Massnahme, die operative Behandlung des Grauen Stars: die Katarakt. Bei der Katarakt handelt es sich um eine Eintrübung der natürlichen Augenlinse, die sich je nach Stadium der Erkrankung leicht opak, über milchig bis zu bräunlich präsentiert. Mit dieser Zunahme der Undurchlässigkeit für das sichtbare Licht geht eine Abnahme des Sehvermögens einher, die bis zur totalen Erblindung führen kann. Bedingt durch die sehr eingeschränkten chirurgischen Möglichkeiten in den Ländern der Dritten Welt ist die Katarakt die Erblindungsursache Nummer 1 in der Welt. Ganz im Gegensatz hierzu ist in den industrialisierten Ländern Europas, Amerikas und Asiens die Katarakt-OP die sicherste chirurgische Intervention. In der Augenheilkunde werden Implantate aller drei Aggregatszustände verwendet.

  9. Mid-infrared source with 0.2 J pulse energy based on nonlinear conversion of Q-switched pulses in ZnGeP2.

    PubMed

    Haakestad, Magnus W; Fonnum, Helge; Lippert, Espen

    2014-04-07

    Mid-infrared (3-5 μm) pulses with high energy are produced using nonlinear conversion in a ZnGeP(2)-based master oscillator-power amplifier, pumped by a Q-switched cryogenic Ho:YLF oscillator. The master oscillator is based on an optical parametric oscillator with a V-shaped 3-mirror ring resonator, and the power amplifier is based on optical parametric amplification in large-aperture ZnGeP(2) crystals. Pulses with up to 212 mJ energy at 1 Hz repetition rate are obtained, with FWHM duration 15 ns and beam quality M(2) = 3.

  10. Study on crystallization kinetics and phase evolution in Li2O-Al2O3-GeO2-P2O5 glass-ceramics system

    NASA Astrophysics Data System (ADS)

    Das, Anurup; Dixit, Anupam; Goswami, Madhumita; Mythili, R.; Hajra, R. N.

    2018-04-01

    To address the safety issues related to liquid electrolyte and improve the battery performance, Solid State Electrolytes (SSEs) are now in frontier area of research interest. We report here synthesis of Li-SSE based on Li2O-Al2O3-GeO2-P2O5 (LAGP) system with NASICON structure. Glass sample with nominal composition Li1.5Al0.5Ge1.5P2.5Si0.5O12 was prepared by melt-quenching technique. Non-isothermal crystallization kinetics was studied using DSC and activation energy of crystallisation was calculated to be ˜ 246 kJ/mol using Kissinger's equation. XRD of heat treated samples show the formation of required LiGe2(PO4)3 phase along with other minor phases. Compositional analysis using SEM-EDX confirms enrichment of Ge and Si along the grain boundaries.

  11. Contact reflectivity effects on thin p-clad InGaAs single quantum-well lasers

    NASA Astrophysics Data System (ADS)

    Wu, C. H.; Zory, P. S.; Emanuel, M. A.

    1994-12-01

    Thin p-clad InGaAs quantum-well (QW) lasers with either Au or Ni as the p-contact metal have been fabricated. Due to reduced contact reflectivity, the Ni contact lasers have significantly higher threshold currents and lower slope efficiencies than the Au contact lasers. In addition, operating wavelength differences greater than 50 nm are observed for cavity lengths between 250 and 700 microns, with large wavelength jumps occurring at shorter and longer cavity lengths. The measured wavelength effects are explained by incorporating the optical mode loss difference between the two laser types into quantum-well laser theory.

  12. GePb Alloy Growth Using Layer Inversion Method

    NASA Astrophysics Data System (ADS)

    Alahmad, Hakimah; Mosleh, Aboozar; Alher, Murtadha; Banihashemian, Seyedeh Fahimeh; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Du, Wei; Li, Bauhoa; Yu, Shui-Qing; Naseem, Hameed A.

    2018-04-01

    Germanium-lead films have been investigated as a new direct-bandgap group IV alloy. GePb films were deposited on Si via thermal evaporation of Ge and Pb solid sources using the layer inversion metal-induced crystallization method for comparison with the current laser-induced recrystallization method. Material characterization of the films using x-ray diffraction analysis revealed highly oriented crystallinity and Pb incorporation as high as 13.5% before and 5.2% after annealing. Transmission electron microscopy, scanning electron microscopy, and energy-dispersive x-ray mapping of the samples revealed uniform incorporation of elements and complete layer inversion. Optical characterization of the GePb films by Raman spectroscopy and photoluminescence techniques showed that annealing the samples resulted in higher crystalline quality as well as bandgap reduction. The bandgap reduction from 0.67 eV to 0.547 eV observed for the highest-quality material confirms the achievement of a direct-bandgap material.

  13. GePb Alloy Growth Using Layer Inversion Method

    NASA Astrophysics Data System (ADS)

    Alahmad, Hakimah; Mosleh, Aboozar; Alher, Murtadha; Banihashemian, Seyedeh Fahimeh; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Du, Wei; Li, Bauhoa; Yu, Shui-Qing; Naseem, Hameed A.

    2018-07-01

    Germanium-lead films have been investigated as a new direct-bandgap group IV alloy. GePb films were deposited on Si via thermal evaporation of Ge and Pb solid sources using the layer inversion metal-induced crystallization method for comparison with the current laser-induced recrystallization method. Material characterization of the films using x-ray diffraction analysis revealed highly oriented crystallinity and Pb incorporation as high as 13.5% before and 5.2% after annealing. Transmission electron microscopy, scanning electron microscopy, and energy-dispersive x-ray mapping of the samples revealed uniform incorporation of elements and complete layer inversion. Optical characterization of the GePb films by Raman spectroscopy and photoluminescence techniques showed that annealing the samples resulted in higher crystalline quality as well as bandgap reduction. The bandgap reduction from 0.67 eV to 0.547 eV observed for the highest-quality material confirms the achievement of a direct-bandgap material.

  14. Nuclear reaction analysis of Ge ion-implanted ZnO bulk single crystals: The evaluation of the displacement in oxygen lattices

    NASA Astrophysics Data System (ADS)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

    2014-08-01

    The displacement of oxygen lattices in Ge ion-implanted ZnO bulk single crystals is studied by nuclear reaction analysis (NAR), photoluminescence (PL), and Van der Pauw methods. The Ge ion-implantation (net concentration: 2.6 × 1020 cm-3) into ZnO is performed using a multiple-step energy. The high resistivity of ∼103 Ω cm in un-implanted samples remarkably decreased to ∼10-2 Ω cm after implanting Ge-ion and annealing subsequently. NRA measurements of as-implanted and annealed samples suggest the existence of the lattice displacement of O atoms acting as acceptor defects. As O related defects still remain after annealing, these defects are not attributed to the origin of the low resistivity in 800 and 1000 °C annealed ZnO.

  15. Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics.

    PubMed

    Fegadolli, William S; Kim, Se-Heon; Postigo, Pablo Aitor; Scherer, Axel

    2013-11-15

    We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ~14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)(3), is a promising and efficient light source for silicon photonics.

  16. Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

    NASA Technical Reports Server (NTRS)

    Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.

    1989-01-01

    A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

  17. Resonant laser printing of structural colors on high-index dielectric metasurfaces

    PubMed Central

    Zhu, Xiaolong; Yan, Wei; Levy, Uriel; Mortensen, N. Asger; Kristensen, Anders

    2017-01-01

    Man-made structural colors, which originate from resonant interactions between visible light and manufactured nanostructures, are emerging as a solution for ink-free color printing. We show that non-iridescent structural colors can be conveniently produced by nanostructures made from high-index dielectric materials. Compared to plasmonic analogs, color surfaces with high-index dielectrics, such as germanium (Ge), have a lower reflectance, yielding a superior color contrast. Taking advantage of band-to-band absorption in Ge, we laser-postprocess Ge color metasurfaces with morphology-dependent resonances. Strong on-resonance energy absorption under pulsed laser irradiation locally elevates the lattice temperature (exceeding 1200 K) in an ultrashort time scale (1 ns). This forms the basis for resonant laser printing, where rapid melting allows for surface energy–driven morphology changes with associated modification of color appearance. Laser-printable high-index dielectric color metasurfaces are scalable to a large area and open a new paradigm for printing and decoration with nonfading and vibrant colors. PMID:28508062

  18. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    DOE PAGES

    Laroche, D.; Huang, S. -H.; Chuang, Y.; ...

    2016-06-06

    We report the magneto-transport, scattering mechanisms, and e ective mass analysis of an ultralow density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0:2Ge0:8 heterostructure. This fabrication technique allows hole densities as low as p 1:1 1010 cm² to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, / n , is found to be 0:29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration modelmore » is used to explain the mobility decrease at the highest achievable densities. The hole e ective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p 1:0 1011cm², the e ective mass m is 0:105 m0, which is signi cantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.« less

  19. Laser induced non-monotonic degradation in short-circuit current of triple-junction solar cells

    NASA Astrophysics Data System (ADS)

    Dou, Peng-Cheng; Feng, Guo-Bin; Zhang, Jian-Min; Song, Ming-Ying; Zhang, Zhen; Li, Yun-Peng; Shi, Yu-Bin

    2018-06-01

    In order to study the continuous wave (CW) laser radiation effects and mechanism of GaInP/GaAs/Ge triple-junction solar cells (TJSCs), 1-on-1 mode irradiation experiments were carried out. It was found that the post-irradiation short circuit current (ISC) of the TJSCs initially decreased and then increased with increasing of irradiation laser power intensity. To explain this phenomenon, a theoretical model had been established and then verified by post-damage tests and equivalent circuit simulations. Conclusion was drawn that laser induced alterations in the surface reflection and shunt resistance were the main causes for the observed non-monotonic decrease in the ISC of the TJSCs.

  20. Laser-induced particle size tuning and structural transformations in germanium nanoparticles prepared by stain etching and colloidal synthesis route

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Karatutlu, Ali, E-mail: a.karatutlu@qmul.ac.uk, E-mail: ali.karatutlu@bou.edu.tr; Electrical and Electronics Engineering, Bursa Orhangazi University, 16310 Yıldırım/Bursa; Little, William

    In this study, with the aid of Raman measurements, we have observed transformations in small (∼3 nm and ∼10 nm) free-standing Ge nanoparticles under laser light exposure. The nanoparticles were obtained by the chemical stain etching of a monocrystalline Ge wafer and of Ge powder and by colloidal synthesis route. We found that the transformation path depends on laser power and exposure time. At relatively low values of the laser power (2 mW) over a period of 100 min, the Raman signal indicates transformation of the sample from a nanocrystaline to bulk-like state, followed by partial oxidation and finally a conversion of themore » entire sample into alpha-quartz type GeO{sub 2}. However, when the laser power is set at 60 mW, we observed a heat release during an explosive crystallization of the nanocrystalline material into bulk Ge without noticeable signs of oxidation. Together with the transmission electron microscopy measurements, these results suggest that the chemical stain etching method for the preparation of porous Ge may not be a top-down process as has been widely considered, but a bottom up one. Systematic studies of the laser exposure on Ge nanoparticles prepared by colloidal synthesis results in the fact that the explosive crystallisation is common for H-terminated and partially disordered Ge nanoparticles regardless of its particle size. We suggest possible bio-medical applications for the observed phenomena.« less

  1. Characteristic optimization of 1.55-μm InGaAsP/InP high-power diode laser

    NASA Astrophysics Data System (ADS)

    Ke, Qing; Tan, Shaoyang; Zhai, Teng; Zhang, Ruikang; Lu, Dan; Ji, Chen

    2014-11-01

    A comprehensive design optimization of 1.55-μm high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency (IQE) while maintaing a low internal loss of the device as well. The P-doping profile and separate confinement heterostructure (SCH) layer band gap are optimized respectively with commercial software Crosslight. Analysis of lasers with different p-doping profiles shows that, although heavy doping in P-cladding layer increases the internal loss of the device, it ensures a high IQE because higher energy barrier at the SCH/P-cladding interface as a result of heavy doping helps reduce the carrier leakage from the waveguide to the InP-cladding layer. The band gap of the SCH layer are also optimized for high slope efficiency. Smaller band gap helps reduce the vertical carrier leakage from the waveguide to the P-cladding layer, but the corresponding higher carrier concentration in SCH layer will cause some radiative recombination, thus influencing the IQE. And as the injection current increases, the carrier concentration increases faster with smaller band gap, therefore, the output power saturates sooner. An optimized band gap in SCH layer of approximately 1.127eV and heavy doping up to 1e18/cm3 at the SCH/P-cladding interface are identified for our high power laser design, and we achieved a high IQE of 94% and internal loss of 2.99/cm for our design.

  2. Insight into unusual impurity absorbability of GeO(2) in GeO(2)∕Ge stacks.

    PubMed

    Ogawa, Shingo; Suda, Taichi; Yamamoto, Takashi; Kutsuki, Katsuhiro; Hideshima, Iori; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2011-10-03

    Adsorbed species and its diffusion behaviors in GeO(2)∕Ge stacks, which are future alternative metal-oxide-semiconductor (MOS) materials, have been investigated using various physical analyses. We clarified that GeO(2) rapidly absorbs moisture in air just after its exposure. After the absorbed moisture in GeO(2) reaches a certain limit, the GeO(2) starts to absorb some organic molecules, which is accompanied by a structural change in GeO(2) to form a partial carbonate or hydroxide. We also found that the hydrogen distribution in GeO(2) shows intrinsic characteristics, indicative of different diffusion behaviors at the surface and at the GeO(2)∕Ge interface. Because the impurity absorbability of GeO(2) has a great influence on the electrical properties in Ge-MOS devices, these results provide valuable information in realizing high quality GeO(2)∕Ge stacks for the actual use of Ge-MOS technologies.

  3. Elastic behaviour and high-pressure phase transition of the P21/n LiAlGe2O6pyroxene

    NASA Astrophysics Data System (ADS)

    Artac, Andreas; Miletich-Pawliczek, Ronald; Nestola, Fabrizio; Redhammer, Günther J.; Secco, Luciano

    2014-05-01

    In a recent work by Redhammer et al. (2012), investigating a synthetic pyroxene sample with composition LiAlGe2O6, a new space group for the big family of pyroxenes has been surprisingly discovered renewing the interest for Li-bearing pyroxene compounds. Actually, the authors of that work intended to investigate the effect of the Si-Ge substitution on the high-pressure behaviour and possibly on the phase transition with respect to spodumene, LiAlSi2O6, investigated by Arlt and Angel in 2000. Spodumene in fact, not only shows a strong first order phase transition at 3.19 GPa from C2/c to P21/c but the low symmetry C2/c shows the greatest bulk modulus never found in pyroxenes (i.e. 144.2 GPa with the first pressure derivative fixed to 4). Redhammer et al. (2012) discovered that substituting Si for Ge in the spodumene structure the effect is dramatic in terms of symmetry change at room conditions with the Ge-spodumene showing a P21/n space group, first discovery of such symmetry in the big family of pyroxene. In this work we loaded one crystal of LiAlGe2O6 in a diamond-anvil cell and investigated the elastic behaviour and its possible high-pressure phase transition by single-crystal X-ray diffraction. In detail, we measured the unit-cell parameters using a Huber four-circle diffractometer equipped with a point detector up to about 9 GPa. The crystal structure was measured at different pressures loading simultaneously two fragments of the same crystal with a different orientation in the same diamond-anvil cell in order to cover a wider portion of the reciprocal space. The intensity data were measured on a STADI IV four-circle diffractometer equipped with a CCD using a diamond-backing plate cell, which gives better structural results with respect to a beryllium backing plate one (i.e. Periotto et al. 2011). The first important result of our work is that we found at about 5.2 GPa a very strong first-order phase transformation from P21/n to P21/c and this is the first

  4. Beam shaping for laser-based adaptive optics in astronomy.

    PubMed

    Béchet, Clémentine; Guesalaga, Andrés; Neichel, Benoit; Fesquet, Vincent; González-Núñez, Héctor; Zúñiga, Sebastián; Escarate, Pedro; Guzman, Dani

    2014-06-02

    The availability and performance of laser-based adaptive optics (AO) systems are strongly dependent on the power and quality of the laser beam before being projected to the sky. Frequent and time-consuming alignment procedures are usually required in the laser systems with free-space optics to optimize the beam. Despite these procedures, significant distortions of the laser beam have been observed during the first two years of operation of the Gemini South multi-conjugate adaptive optics system (GeMS). A beam shaping concept with two deformable mirrors is investigated in order to provide automated optimization of the laser quality for astronomical AO. This study aims at demonstrating the correction of quasi-static aberrations of the laser, in both amplitude and phase, testing a prototype of this two-deformable mirror concept on GeMS. The paper presents the results of the preparatory study before the experimental phase. An algorithm to control amplitude and phase correction, based on phase retrieval techniques, is presented with a novel unwrapping method. Its performance is assessed via numerical simulations, using aberrations measured at GeMS as reference. The results predict effective amplitude and phase correction of the laser distortions with about 120 actuators per mirror and a separation of 1.4 m between the mirrors. The spot size is estimated to be reduced by up to 15% thanks to the correction. In terms of AO noise level, this has the same benefit as increasing the photon flux by 40%.

  5. Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates

    NASA Astrophysics Data System (ADS)

    Bonilla, Manuel; Kolekar, Sadhu; Ma, Yujing; Diaz, Horacio Coy; Kalappattil, Vijaysankar; Das, Raja; Eggers, Tatiana; Gutierrez, Humberto R.; Phan, Manh-Huong; Batzill, Matthias

    2018-04-01

    Reduced dimensionality and interlayer coupling in van der Waals materials gives rise to fundamentally different electronic1, optical2 and many-body quantum3-5 properties in monolayers compared with the bulk. This layer-dependence permits the discovery of novel material properties in the monolayer regime. Ferromagnetic order in two-dimensional materials is a coveted property that would allow fundamental studies of spin behaviour in low dimensions and enable new spintronics applications6-8. Recent studies have shown that for the bulk-ferromagnetic layered materials CrI3 (ref. 9) and Cr2Ge2Te6 (ref. 10), ferromagnetic order is maintained down to the ultrathin limit at low temperatures. Contrary to these observations, we report the emergence of strong ferromagnetic ordering for monolayer VSe2, a material that is paramagnetic in the bulk11,12. Importantly, the ferromagnetic ordering with a large magnetic moment persists to above room temperature, making VSe2 an attractive material for van der Waals spintronics applications.

  6. Measurements of mass-dependent azimuthal anisotropy in central p + Au, d + Au, and 3He + Au collisions at √{sN N}=200 GeV

    NASA Astrophysics Data System (ADS)

    Adare, A.; Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Alfred, M.; Andrieux, V.; Apadula, N.; Asano, H.; Azmoun, B.; Babintsev, V.; Bagoly, A.; Bai, M.; Bandara, N. S.; Bannier, B.; Barish, K. N.; Bathe, S.; Bazilevsky, A.; Beaumier, M.; Beckman, S.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Blau, D. S.; Boer, M.; Bok, J. S.; Boyle, K.; Brooks, M. L.; Bryslawskyj, J.; Bumazhnov, V.; Campbell, S.; Canoa Roman, V.; Cervantes, R.; Chen, C.-H.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Chujo, T.; Citron, Z.; Connors, M.; Cronin, N.; Csanád, M.; Csörgő, T.; Danley, T. W.; Datta, A.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Dion, A.; Diss, P. B.; Dixit, D.; Do, J. H.; Drees, A.; Drees, K. A.; Durham, J. M.; Durum, A.; Enokizono, A.; En'yo, H.; Esumi, S.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukuda, Y.; Gal, C.; Gallus, P.; Garg, P.; Ge, H.; Giordano, F.; Glenn, A.; Goto, Y.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gunji, T.; Guragain, H.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamilton, H. F.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haseler, T. O. S.; Hashimoto, K.; He, X.; Hemmick, T. K.; Hill, J. C.; Hill, K.; Hodges, A.; Hollis, R. S.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Imai, K.; Imrek, J.; Inaba, M.; Iordanova, A.; Isenhower, D.; Ivanishchev, D.; Jacak, B. V.; Jezghani, M.; Ji, Z.; Jia, J.; Jiang, X.; Johnson, B. M.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kanda, S.; Kang, J. H.; Kapukchyan, D.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Key, J. A.; Khachatryan, V.; Khanzadeev, A.; Kim, C.; Kim, D. J.; Kim, E.-J.; Kim, G. W.; Kim, M.; Kim, M. H.; Kimelman, B.; Kincses, D.; Kistenev, E.; Kitamura, R.; Klatsky, J.; Kleinjan, D.; Kline, P.; Koblesky, T.; Komkov, B.; Kotov, D.; Kudo, S.; Kurgyis, B.; Kurita, K.; Kurosawa, M.; Kwon, Y.; Lacey, R.; Lajoie, J. G.; Lebedev, A.; Lee, S.; Lee, S. H.; Leitch, M. J.; Leung, Y. H.; Lewis, N. A.; Li, X.; Li, X.; Lim, S. H.; Liu, M. X.; Loggins, V.-R.; Lökös, S.; Lovasz, K.; Lynch, D.; Majoros, T.; Makdisi, Y. I.; Makek, M.; Manion, A.; Manko, V. I.; Mannel, E.; Masuda, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Meles, A.; Mendoza, M.; Metzger, W. J.; Mignerey, A. C.; Mihalik, D. E.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Miyasaka, S.; Mizuno, S.; Mohanty, A. K.; Montuenga, P.; Moon, T.; Morrison, D. P.; Morrow, S. I.; Moukhanova, T. V.; Murakami, T.; Murata, J.; Mwai, A.; Nagai, K.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakano, K.; Nattrass, C.; Netrakanti, P. K.; Niida, T.; Nishimura, S.; Nouicer, R.; Novák, T.; Novitzky, N.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ottino, G. J.; Ozawa, K.; Pak, R.; Pantuev, V.; Papavassiliou, V.; Park, J. S.; Park, S.; Pate, S. F.; Patel, M.; Peng, J.-C.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perezlara, C. E.; Perry, J.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pinson, R.; Pisani, R. P.; Pun, A.; Purschke, M. L.; Radzevich, P. V.; Rak, J.; Ramson, B. J.; Ravinovich, I.; Read, K. F.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richford, D.; Rinn, T.; Rolnick, S. D.; Rosati, M.; Rowan, Z.; Rubin, J. G.; Runchey, J.; Safonov, A. S.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seidl, R.; Sen, A.; Seto, R.; Sett, P.; Sexton, A.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shioya, T.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Singh, B. K.; Singh, C. P.; Singh, V.; Skoby, M. J.; Slunečka, M.; Snowball, M.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Stepanov, M.; Stoll, S. P.; Sugitate, T.; Sukhanov, A.; Sumita, T.; Sun, J.; Sziklai, J.; Takeda, A.; Taketani, A.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarnai, G.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Tomášek, M.; Towell, C. L.; Towell, R.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vazquez-Carson, S.; Velkovska, J.; Virius, M.; Vrba, V.; Vukman, N.; Wang, X. R.; Wang, Z.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; White, A. S.; Wong, C. P.; Woody, C. L.; Wysocki, M.; Xia, B.; Xu, C.; Xu, Q.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yamamoto, H.; Yanovich, A.; Yin, P.; Yoo, J. H.; Yoon, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zharko, S.; Zhou, S.; Zou, L.; Phenix Collaboration

    2018-06-01

    We present measurements of the transverse-momentum dependence of elliptic flow v2 for identified pions and (anti)protons at midrapidity (|η |<0.35 ), in 0%-5% central p +Au and 3He+Au collisions at √{sNN}=200 GeV. When taken together with previously published measurements in d +Au collisions at √{sNN}=200 GeV, the results cover a broad range of small-collision-system multiplicities and intrinsic initial geometries. We observe a clear mass-dependent splitting of v2(pT) in d +Au and 3He+Au collisions, just as in large nucleus-nucleus (A +A ) collisions, and a smaller splitting in p +Au collisions. Both hydrodynamic and transport model calculations successfully describe the data at low pT (<1.5 GeV /c ), but fail to describe various features at higher pT. In all systems, the v2 values follow an approximate quark-number scaling as a function of the hadron transverse kinetic energy per constituent quark (K ET/nq ), which was also seen previously in A +A collisions.

  7. Phase equilibria in the La–Mg–Ge system at 500 °C and crystal structure of the new ternary compounds La{sub 11}Mg{sub 2}Ge{sub 7} and LaMg{sub 3−x}Ge{sub 2}

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    De Negri, S., E-mail: serena.denegri@unige.it; Solokha, P.; Skrobańska, M.

    2014-10-15

    The whole 500 °C isothermal section of the La–Mg–Ge ternary system was constructed. The existence and crystal structure of three ternary compounds were confirmed: La{sub 2+x}Mg{sub 1−x}Ge{sub 2} (τ{sub 2}, P4/mbm, tP10–Mo{sub 2}FeB{sub 2}, 0≤x≤0.25), La{sub 4}Mg{sub 5}Ge{sub 6} (τ{sub 3}, Cmc2{sub 1}, oS60–Gd{sub 4}Zn{sub 5}Ge{sub 6}) and La{sub 4}Mg{sub 7}Ge{sub 6} (τ{sub 4}, C2/m, mS34, own structure type). Five novel compounds were identified and structurally characterized: La{sub 11}Mg{sub 2}Ge{sub 7} (τ{sub 1}, P4{sub 2}/ncm, tP88-8, own structure type, a=1.21338(5), c=1.57802(6) nm), LaMg{sub 3−x}Ge{sub 2} (τ{sub 5}, P3{sup ¯}1c, hP34-0.44, own structure type, x=0.407(5), a=0.78408(4), c=1.45257(7) nm), La{sub 6}Mg{sub 23}Gemore » (τ{sub 6}, Fm3{sup ¯}m, cF120–Zr{sub 6}Zn{sub 23}Si, a=1.46694(6) nm), La{sub 4}MgGe{sub 10−x} (τ{sub 7}, x=0.37(1), C2/m, mS60-1.46, own structure type, a=0.88403(8), b=0.86756(8), c=1.7709(2) nm, β=97.16°(1) and La{sub 2}MgGe{sub 6} (τ{sub 8}, Cmce, oS72–Ce{sub 2}(Ga{sub 0.1}Ge{sub 0.9}){sub 7}, a=0.8989(2), b=0.8517(2), c=2.1064(3) nm). Disordering phenomena were revealed in several La–Mg–Ge phases in terms of partially occupied sites. The crystal structures of La{sub 11}Mg{sub 2}Ge{sub 7} and LaMg{sub 3−x}Ge{sub 2} are discussed in details. The latter is a √3a×√3a×2c superstructure of the LaLi{sub 3}Sb{sub 2} structure type; the symmetry reduction scheme is shown in the Bärnighausen formalism terms. - Graphical abstract: La–Mg–Ge isothermal section at 500 °C and group–subgroup relation between the LaLi{sub 3}Sb{sub 2} (parent type) and LaMg{sub 3−x}Ge{sub 2} (derivative) structures. - Highlights: • Novel La−Mg−Ge compounds structure determination from X-ray single crystal data. • Disordering phenomena as common features of the studied germanides. • Bärnighausen formalism as a useful tool for accurate structure determination. • Full isothermal section of the

  8. Measurements of mass-dependent azimuthal anisotropy in central p + Au, d + Au, and He 3 + Au collisions at s N N = 200 GeV

    DOE PAGES

    Adare, A.; Aidala, C.; Ajitanand, N. N.; ...

    2018-06-11

    Here, we present measurements of the transverse-momentum dependence of elliptic flow v 2 for identified pions and (anti)protons at midrapidity (|η| < 0.35), in 0%–5% central p+Au and 3He+Au collisions at √ s NN = 200 GeV. When taken together with previously published measurements in d + Au collisions at √ s NN = 200 GeV, the results cover a broad range of small-collision-system multiplicities and intrinsic initial geometries. We observe a clear mass-dependent splitting of v 2(p T) in d + Au and 3He + Au collisions, just as in large nucleus-nucleus (A + A) collisions, and a smallermore » splitting in p + Au collisions. Both hydrodynamic and transport model calculations successfully describe the data at low p T (< 1.5GeV/c), but fail to describe various features at higher p T. In all systems, the v 2 values follow an approximate quark-number scaling as a function of the hadron transverse kinetic energy per constituent quark (KE T/n q), which was also seen previously in A + A collisions.« less

  9. Measurements of mass-dependent azimuthal anisotropy in central p + Au, d + Au, and He 3 + Au collisions at s N N = 200 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adare, A.; Aidala, C.; Ajitanand, N. N.

    Here, we present measurements of the transverse-momentum dependence of elliptic flow v 2 for identified pions and (anti)protons at midrapidity (|η| < 0.35), in 0%–5% central p+Au and 3He+Au collisions at √ s NN = 200 GeV. When taken together with previously published measurements in d + Au collisions at √ s NN = 200 GeV, the results cover a broad range of small-collision-system multiplicities and intrinsic initial geometries. We observe a clear mass-dependent splitting of v 2(p T) in d + Au and 3He + Au collisions, just as in large nucleus-nucleus (A + A) collisions, and a smallermore » splitting in p + Au collisions. Both hydrodynamic and transport model calculations successfully describe the data at low p T (< 1.5GeV/c), but fail to describe various features at higher p T. In all systems, the v 2 values follow an approximate quark-number scaling as a function of the hadron transverse kinetic energy per constituent quark (KE T/n q), which was also seen previously in A + A collisions.« less

  10. Transverse spin-dependent azimuthal correlations of charged pion pairs measured in p↑ + p collisions at √{ s } = 500 GeV

    NASA Astrophysics Data System (ADS)

    Adamczyk, L.; Adams, J. R.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Ajitanand, N. N.; Alekseev, I.; Anderson, D. M.; Aoyama, R.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Ashraf, M. U.; Attri, A.; Averichev, G. S.; Bairathi, V.; Barish, K.; Behera, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandenburg, J. D.; Brandin, A. V.; Brown, D.; Bryslawskyj, J.; Bunzarov, I.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chankova-Bunzarova, N.; Chatterjee, A.; Chattopadhyay, S.; Chen, J. H.; Chen, X.; Chen, X.; Cheng, J.; Cherney, M.; Christie, W.; Contin, G.; Crawford, H. J.; Dedovich, T. G.; Deng, J.; Deppner, I. M.; Derevschikov, A. A.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Efimov, L. G.; Elsey, N.; Engelage, J.; Eppley, G.; Esha, R.; Esumi, S.; Evdokimov, O.; Ewigleben, J.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Federicova, P.; Fedorisin, J.; Feng, Z.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Fujita, J.; Fulek, L.; Gagliardi, C. A.; Geurts, F.; Gibson, A.; Girard, M.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, A.; Guryn, W.; Hamad, A. I.; Hamed, A.; Harlenderova, A.; Harris, J. W.; He, L.; Heppelmann, S.; Heppelmann, S.; Herrmann, N.; Hirsch, A.; Horvat, S.; Huang, X.; Huang, H. Z.; Huang, T.; Huang, B.; Humanic, T. J.; Huo, P.; Igo, G.; Jacobs, W. W.; Jentsch, A.; Jia, J.; Jiang, K.; Jowzaee, S.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kapukchyan, D.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z.; Kikoła, D. P.; Kim, C.; Kisel, I.; Kisiel, A.; Kochenda, L.; Kocmanek, M.; Kollegger, T.; Kosarzewski, L. K.; Kraishan, A. F.; Krauth, L.; Kravtsov, P.; Krueger, K.; Kulathunga, N.; Kumar, L.; Kvapil, J.; Kwasizur, J. H.; Lacey, R.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, W.; Li, C.; Li, X.; Li, Y.; Lidrych, J.; Lin, T.; Lisa, M. A.; Liu, Y.; Liu, H.; Liu, F.; Liu, P.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Luo, S.; Ma, L.; Ma, Y. G.; Ma, G. L.; Ma, R.; Magdy, N.; Majka, R.; Mallick, D.; Margetis, S.; Markert, C.; Matis, H. S.; Mayes, D.; Meehan, K.; Mei, J. C.; Miller, Z. W.; Minaev, N. G.; Mioduszewski, S.; Mishra, D.; Mizuno, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nemes, D. B.; Nie, M.; Nigmatkulov, G.; Niida, T.; Nogach, L. V.; Nonaka, T.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V. A.; Olvitt, D.; Page, B. S.; Pak, R.; Pandit, Y.; Panebratsev, Y.; Pawlik, B.; Pei, H.; Perkins, C.; Pluta, J.; Poniatowska, K.; Porter, J.; Posik, M.; Pruthi, N. K.; Przybycien, M.; Putschke, J.; Quintero, A.; Ramachandran, S.; Ray, R. L.; Reed, R.; Rehbein, M. J.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roth, J. D.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Salur, S.; Sandweiss, J.; Saur, M.; Schambach, J.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Schweid, B. R.; Seger, J.; Sergeeva, M.; Seto, R.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Shen, W. Q.; Shi, S. S.; Shi, Z.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Singha, S.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Solyst, W.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stewart, D. J.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Sugiura, T.; Sumbera, M.; Summa, B.; Sun, X.; Sun, X. M.; Sun, Y.; Surrow, B.; Svirida, D. N.; Tang, Z.; Tang, A. H.; Taranenko, A.; Tarnowsky, T.; Tawfik, A.; Thäder, J.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Todoroki, T.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Trzeciak, B. A.; Tsai, O. D.; Tu, B.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vasiliev, A. N.; Videbæk, F.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, G.; Wang, Y.; Wang, Y.; Wang, F.; Webb, G.; Webb, J. C.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y.; Xiao, Z. G.; Xie, G.; Xie, W.; Xu, N.; Xu, Y. F.; Xu, Q. H.; Xu, Z.; Yang, Y.; Yang, C.; Yang, S.; Yang, Q.; Ye, Z.; Ye, Z.; Yi, L.; Yip, K.; Yoo, I.-K.; Zbroszczyk, H.; Zha, W.; Zhang, J. B.; Zhang, J.; Zhang, S.; Zhang, J.; Zhang, S.; Zhang, Z.; Zhang, Y.; Zhang, L.; Zhang, X. P.; Zhao, J.; Zhong, C.; Zhou, C.; Zhou, L.; Zhu, X.; Zhu, Z.; Zyzak, M.

    2018-05-01

    The transversity distribution, which describes transversely polarized quarks in transversely polarized nucleons, is a fundamental component of the spin structure of the nucleon, and is only loosely constrained by global fits to existing semi-inclusive deep inelastic scattering (SIDIS) data. In transversely polarized p↑ + p collisions it can be accessed using transverse polarization dependent fragmentation functions which give rise to azimuthal correlations between the polarization of the struck parton and the final state scalar mesons. This letter reports on spin dependent di-hadron correlations measured by the STAR experiment. The new dataset corresponds to 25 pb-1 integrated luminosity of p↑ + p collisions at √{ s } = 500 GeV, an increase of more than a factor of ten compared to our previous measurement at √{ s } = 200 GeV. Non-zero asymmetries sensitive to transversity are observed at a Q2 of several hundred GeV and are found to be consistent with the former measurement and a model calculation. We expect that these data will enable an extraction of transversity with comparable precision to current SIDIS datasets but at much higher momentum transfers where subleading effects are suppressed.

  11. Evidence for Exotic Meson Production in π -p Interactions at 18 GeV/c

    NASA Astrophysics Data System (ADS)

    Willutzki, H. J.

    2000-10-01

    The η π - system has been studied in the reaction π -p → η π -p at 18 GeV/c. A large asymmetry in the angular distribution is observed indicating interference between L-even and L-odd partial waves. The data require interference between the a2(1320) and an exotic JPC=1-+ resonance π 1(1400) with M=(1370 ± 16+50-30) MeV/c2 and Γ =(385 ± 40+65-105) MeV/c2. A second exotic JPC=1-+ resonance π 1(1600) has been found in the reaction π -p → π +π -π -p in the ρ π channel. A mass-dependent fit yields M=(1593 ± 8+29-47) MeV/c2 and Γ =(168 ± 20+150-12) MeV/c2. Presumably the same resonance is also found in the η '(959)π - final state with M=(1589 ± 9) MeV/c2 and Γ =(380 ± 22) MeV/c2.

  12. Dark current reduction of Ge photodetector by GeO₂ surface passivation and gas-phase doping.

    PubMed

    Takenaka, Mitsuru; Morii, Kiyohito; Sugiyama, Masakazu; Nakano, Yoshiaki; Takagi, Shinichi

    2012-04-09

    We have investigated the dark current of a germanium (Ge) photodetector (PD) with a GeO₂ surface passivation layer and a gas-phase-doped n+/p junction. The gas-phase-doped PN diodes exhibited a dark current of approximately two orders of magnitude lower than that of the diodes formed by a conventional ion implantation process, indicating that gas-phase doping is suitable for low-damage PN junction formation. The bulk leakage (Jbulk) and surface leakage (Jsurf) components of the dark current were also investigated. We have found that GeO₂ surface passivation can effectively suppress the dark current of a Ge PD in conjunction with gas-phase doping, and we have obtained extremely low values of Jbulk of 0.032 mA/cm² and Jsurf of 0.27 μA/cm.

  13. Phase change properties of Ge2Sb2Te5 compared to Ge4Sb1Te5 with respect to data storage applications

    NASA Astrophysics Data System (ADS)

    Friedrich, I.; Weidenhof, V.; Njoroge, W.; Franz, P.; Wuttig, M.

    2000-03-01

    To be able to adjust material properties to the demands of rewritable optical storage applications (high data density and transfer rates) we have investigated and compared the phase change characteristics of thin sputtered Ge2Sb2Te5- and Ge4Sb1Te5-films. Both crystallize into a rocksalt structure at 157C, and 150C, respectively. The material with the higher content of Ge shows a significantly higher activation energy (EA=3.7eV in comparison to EA=2.24eV), as confirmed by temperature dependent electrical measurements. This results in a larger incubation time for laser modification on the ns-scale. Ge2Sb2Te5 shows a second transition into a rather complex hexagonal structure at 310C (EA=3.64eV). The optical properties of both phases are slightly different. Laser modified areas are always in the first phase as confirmed by TEM and SAD. Hence there is a risk of a coexistence of two phases which would lead to an increase of the noise level in storage applications. This can be avoided by using a crystalline matrix with rocksalt structure. By capping the single phase change films with a thin dielectric layer the transition temperatures and activation energies are increasing for both materials, which might be attributed to changes of the tension state at the interface. footnotes the note goes between the ; number. set of curly braces; then put the associated URL in the set. The command may go anywhere in the abstract. the text in the first curly braces will show the printed version.

  14. Hydrogen interaction kinetics of Ge dangling bonds at the Si{sub 0.25}Ge{sub 0.75}/SiO{sub 2} interface

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Stesmans, A., E-mail: andre.stesmans@fys.kuleuven.be; Nguyen Hoang, T.; Afanas'ev, V. V.

    2014-07-28

    The hydrogen interaction kinetics of the GeP{sub b1} defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ∼7 × 10{sup 12} cm{sup −2} at the SiGe/SiO{sub 2} interfaces of condensation grown (100)Si/a-SiO{sub 2}/Ge{sub 0.75}Si{sub 0.25}/a-SiO{sub 2} structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis ofmore » both defect passivation (pictured as GeP{sub b1}-H formation) in molecular hydrogen (∼1 atm) and reactivation (GeP{sub b1}-H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP{sub b1} + H{sub 2} → GeP{sub b1}H + H and GeP{sub b1}H → GeP{sub b1} + H, which are found to be characterized by the average activation energies E{sub f} = 1.44 ± 0.04 eV and E{sub d} = 2.23 ± 0.04 eV, and attendant, assumedly Gaussian, spreads σE{sub f} = 0.20 ± 0.02 eV and σE{sub d} = 0.15 ± 0.02 eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t{sub a} ∼ 35 min, it is found that even for the optimum treatment temperature ∼380 °C, only ∼60% of the GeP{sub b1

  15. B -meson production at forward and backward rapidity in p + p and Cu + Au collisions at s N N = 200 GeV

    DOE PAGES

    Aidala, C.; Ajitanand, N. N.; Akiba, Y.; ...

    2017-12-04

    The fraction of J/Ψ mesons which come from B-meson decay, F B→J/Ψ, is measured in this paper for J/Ψ rapidity 1.2 < |y| < 2.2 and p T > 0 in p + p and Cu+Au collisions at √ sNN = 200 GeV with the PHENIX detector. The extracted fraction is F B→J/Ψ = 0.025 ± 0.006 (stat) ± 0.010(syst) for p + p collisions. For Cu+Au collisions, F B→J/Ψ is 0.094 ± 0.028 (stat) ± 0.037(syst) in the Au-going direction (-2.2 < y < -1.2) and 0.089 ± 0.026(stat) ± 0.040(syst) in the Cu-going direction (1.2 < y p + p at both forward and backward rapidity.« less

  16. B -meson production at forward and backward rapidity in p + p and Cu + Au collisions at s N N = 200 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aidala, C.; Ajitanand, N. N.; Akiba, Y.

    The fraction of J/Ψ mesons which come from B-meson decay, F B→J/Ψ, is measured in this paper for J/Ψ rapidity 1.2 < |y| < 2.2 and p T > 0 in p + p and Cu+Au collisions at √ sNN = 200 GeV with the PHENIX detector. The extracted fraction is F B→J/Ψ = 0.025 ± 0.006 (stat) ± 0.010(syst) for p + p collisions. For Cu+Au collisions, F B→J/Ψ is 0.094 ± 0.028 (stat) ± 0.037(syst) in the Au-going direction (-2.2 < y < -1.2) and 0.089 ± 0.026(stat) ± 0.040(syst) in the Cu-going direction (1.2 < y p + p at both forward and backward rapidity.« less

  17. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    NASA Astrophysics Data System (ADS)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  18. Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

    NASA Astrophysics Data System (ADS)

    Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

    2018-01-01

    Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

  19. Effects of Ge replacement in GeTe by Ag or Sb on the Seebeck coefficient and carrier concentration modified by local electron imbalance

    NASA Astrophysics Data System (ADS)

    Levin, E. M.; Howard, A.; Straszheim, W. E.

    2015-03-01

    XRD, SEM, EDS, 125Te NMR, Seebeck coefficient, and electrical resistivity of AgxGe50-xTe50 and SbxGe50-xTe50 alloys have been studied. Replacement of Ge in GeTe by Sb significantly increases the Seebeck coefficient, while replacement by Ag decreases it. These effects can be attributed to a change in carrier concentration observed via 125Te NMR spin-lattice relaxation measurements and NMR signal position, which mostly depends on the Knight shift. Variation in carrier concentration in AgxGe50-xTe50 and SbxGe50-xTe50 can be attributed to different electron configurations of valence electrons of Ag (4d105s1) and Sb (5s25p3) compared to that of Ge (4s24p2) resulting in local electron imbalances and changing the concentration of charge carrier (holes) generated by Ge vacancies. In contrast, our 125Te NMR and Seebeck coefficient data for Ag2Sb2Ge46Te50 are similar to those observed for GeTe. This shows that effects from Ag and Sb compensate each other and indicates the existence of [Ag +Sb] pairs. The effects of Ge replacement in GeTe by Ag, Sb, or [Ag +Sb] on rhombohedral lattice distortion also have been analyzed. Interplay between the Seebeck coefficient and electrical resistivity in these alloys results in variation of power factor; the value of 45 mW/cm K2, the highest among known tellurides, was found for Sb2Ge48Te50.

  20. K*(892)⁰ and K̄*(892)⁰ production in central Pb + Pb, Si + Si, C + C, and inelastic p + p collisions at 158A GeV

    DOE PAGES

    Anticic, T.; Baatar, B.; Barna, D.; ...

    2011-12-13

    Production of the K*(892)0 and K̄*(892)⁰ resonances was studied via their K⁺π⁻ and K⁻π⁺ decay modes in central Pb+Pb, Si+Si, C+C, and inelastic p+p collisions at 158A GeV(√( sNN)=17.3 GeV) with the NA49 detector at the CERN SPS. Transverse momentum and rapidity distributions were measured and total yields were estimated. The yield of K* exceeds that of K̄* by about a factor of two in nucleus-nucleus reactions. The total yield ratios ⟨K*⟩/⟨K+⟩ and ⟨K̄*⟩/⟨K-⟩ are strongly suppressed in central Pb+Pb compared to p+p, C+C, and Si+Si collisions, in agreement with the expected attenuation of these short-lived resonance states in themore » hadronic phase of the expanding fireball. The UrQMD model, although incorporating such a scenario, does not provide a quantitative description of the experimental results. The statistical hadron gas model assuming the same freeze-out parameters for stable hadrons and resonances overestimates the ⟨K*⟩/⟨K⟩ ratios in central Pb+Pb collisions by about a factor of 2.5.« less

  1. MEASUREMENT OF THE CROSS-SECTION FOR THE γ γ -> p/line{p} PROCESS AT √ {s} = 183 - 189\\ GeV AT LEP

    NASA Astrophysics Data System (ADS)

    Barillari, T.

    2002-07-01

    The OPAL detector at LEP has been used to study the exclusive production of proton antiproton pairs in the collisions of two quasi-real photons using data taken at √ {s} = 183\\ GeV and 189 GeV. The results here presented are for γγ invariant masses, W, in the range 2.15 GeV < W < 3.95 GeV. The cross-section measurements are compared with previous data and with recent analytic calculations based on the quark-diquark model predictions.

  2. Laser Evaporation Studies.

    DTIC Science & Technology

    1987-10-01

    characterized to understand the ef- dependent refractive-index, ambient sensitivity due to fects of the laser evaporation conditions on the struc- adsorption of...or Ar-coated ZnSe crystalline structure in thin films Pulsed laser-assisted dep- osition is one such emerging technique which has a unique...needed to pre% ent satura- plates of ZnSe. NaCI. GaAs. and Ge. which when used in tion of the detector arraN. ,arious combinations proided incremental

  3. Vertical nanowire heterojunction devices based on a clean Si/Ge interface.

    PubMed

    Chen, Lin; Fung, Wayne Y; Lu, Wei

    2013-01-01

    Different vertical nanowire heterojunction devices were fabricated and tested based on vertical Ge nanowires grown epitaxially at low temperatures on (111) Si substrates with a sharp and clean Si/Ge interface. The nearly ideal Si/Ge heterojuctions with controlled and abrupt doping profiles were verified through material analysis and electrical characterizations. In the nSi/pGe heterojunction diode, an ideality factor of 1.16, subpicoampere reverse saturation current, and rectifying ratio of 10(6) were obtained, while the n+Si/p+Ge structure leads to Esaki tunnel diodes with a high peak tunneling current of 4.57 kA/cm(2) and negative differential resistance at room temperature. The large valence band discontinuity between the Ge and Si in the nanowire heterojunctions was further verified in the p+Si/pGe structure, which shows a rectifying behavior instead of an Ohmic contact and raises an important issue in making Ohmic contacts to heterogeneously integrated materials. A raised Si/Ge structure was further developed using a self-aligned etch process, allowing greater freedom in device design for applications such as the tunneling field-effect transistor (TFET). All measurement data can be well-explained and fitted with theoretical models with known bulk properties, suggesting that the Si/Ge nanowire system offers a very clean heterojunction interface with low defect density, and holds great potential as a platform for future high-density and high-performance electronics.

  4. Lithospermum erythrorhizon extract inhibits Der p2-induced inflammatory response through alleviation of thymic stromal lymphopoietin, nuclear factor Kappa B, and inflammasome expression in human bronchial epithelial cells.

    PubMed

    Yen, Chung-Yang; Chiang, Wen-Dee; Liu, Shang-Yong; Wang, Kun-Teng; Liao, En-Chih; Hsieh, Ching-Liang

    2017-04-06

    Lithospermum erythrorhizon (LE) and Angelica sinensis (AS), widely used in several folk medicine for wound, pus discharge and dermatitis for the history of several hundred years in Asian countries. To investigate the therapeutic effect of LE and AS on Der p2-induced inflammatory response in human bronchial epithelial (BEAS-2B) cells. The effects of Der p2 stimulation on thymic stromal lymphopoietin (TSLP), the nuclear factor kappa B (NF-κB) pathway, the inflammasome (specifically, the apoptosis speck-like protein [ASC] and nod-like receptor 3 [NLRP3]), Caspase-1 and the signal transducer and activator of transcription (STAT) 3 pathway were evaluated in the human bronchial epithelial (BEAS-2B) cells. The results indicated that LE, AS, and LE+AS reduced TSLP, I kappa B kinase-α, and NLRP3 levels; LE and AS reduced Caspase-1; LE and LE+AS also reduced NF-κB p50, NF-κB p65, ASC, and STAT3 levels. Both LE and AS aqueous extracts exert anti-inflammatory effects in Der p2-stimulated BEAS-2B cells. These effects may involve multiple mechanisms, including the inhibition of TSLP production as well as the suppression of IKKα, Caspase-1 and NLRP3; however, additional studies are warranted to elucidate the underlying mechanisms. Copyright © 2017 Elsevier Ireland Ltd. All rights reserved.

  5. Suppression of allergic airway inflammation in a mouse model by Der p2 recombined BCG.

    PubMed

    Ou-Yang, Hai-Feng; Hu, Xing-Bin; Ti, Xin-Yu; Shi, Jie-Ran; Li, Shu-Jun; Qi, Hao-Wen; Wu, Chang-Gui

    2009-09-01

    Allergic asthma is a chronic inflammatory disease mediated by T helper (Th)2 cell immune responses. Currently, immunotherapies based on both immune deviation and immune suppression, including the development of recombinant mycobacteria as immunoregulatory vaccines, are attractive treatment strategies for asthma. In our previous studies, we created a genetically recombinant form of bacille Calmette-Guerin (rBCG) that expressed Der p2 of house dust mites and established that it induced a shift from a Th2 response to a Th1 response in naive mice. However, it is unclear whether rBCG could suppress allergic airway inflammation in a mouse model. In this article we report that rBCG dramatically inhibited airway inflammation, eosinophilia, mucus production and mast cell degranulation in allergic mice. Analysis of interferon-gamma (IFN-gamma) and interleukin-4 (IL-4) levels in bronchoalveolar lavage fluid (BALF) and lung tissue revealed that the suppression was associated with a shift from a Th2 response to a Th1 response. At the same time, rBCG induced a CD4(+) CD25(+) Foxp3(+) T-cell subtype that could suppress the proliferation of Th2 effector cells in vitro in an antigen-specific manner. Moreover, suppression of CD4(+) CD25(+) T cells could be adoptively transferred. Thus, our results demonstrate that rBCG induces both generic and specific immune responses. The generic immune response is associated with a shift from a Th2 to a Th1 cytokine response, whereas the specific immune response against Der p2 appears to be related to the expansion of transforming growth factor-beta (TGF-beta)-producing CD4(+) CD25(+) Foxp3(+) regulatory T cells. rBCG can suppress asthmatic airway inflammation through both immune deviation and immune suppression and may be a feasible, efficient immunotherapy for asthma.

  6. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110)

    NASA Astrophysics Data System (ADS)

    Edmonds, Mary; Sardashti, Kasra; Wolf, Steven; Chagarov, Evgueni; Clemons, Max; Kent, Tyler; Park, Jun Hong; Tang, Kechao; McIntyre, Paul C.; Yoshida, Naomi; Dong, Lin; Holmes, Russell; Alvarez, Daniel; Kummel, Andrew C.

    2017-02-01

    Atomic layer deposition of a silicon rich SiNx layer on Si0.7Ge0.3(001), Si0.5Ge0.5(001), and Si0.5Ge0.5(110) surfaces has been achieved by sequential pulsing of Si2Cl6 and N2H4 precursors at a substrate temperature of 285 °C. XPS spectra show a higher binding energy shoulder peak on Si 2p indicative of SiOxNyClz bonding while Ge 2p and Ge 3d peaks show only a small amount of higher binding energy components consistent with only interfacial bonds, indicating the growth of SiOxNy on the SiGe surface with negligible subsurface reactions. Scanning tunneling spectroscopy measurements confirm that the SiNx interfacial layer forms an electrically passive surface on p-type Si0.70Ge0.30(001), Si0.50Ge0.50(110), and Si0.50Ge0.50(001) substrates as the surface Fermi level is unpinned and the electronic structure is free of states in the band gap. DFT calculations show that a Si rich a-SiO0.4N0,4 interlayer can produce lower interfacial defect density than stoichiometric a-SiO0.8N0.8, substoichiometric a-Si3N2, or stoichiometric a-Si3N4 interlayers by minimizing strain and bond breaking in the SiGe by the interlayer. Metal-oxide-semiconductor capacitors devices were fabricated on p-type Si0.7Ge0.3(001) and Si0.5Ge0.5(001) substrates with and without the insertion of an ALD SiOxNy interfacial layer, and the SiOxNy layer resulted in a decrease in interface state density near midgap with a comparable Cmax value.

  7. Kants Theorie der Sonne: Physikgeschichte

    NASA Astrophysics Data System (ADS)

    Jacobi, Manfred

    2005-01-01

    Im Rahmen seiner Kosmogonie entwickelte der junge Immanuel Kant eine Theorie der Sonne. Sie ist ein einzigartiges Zeugnis seiner intuitiven Vorstellungskraft und beweist auch die Leistungsfähigkeit der damaligen, vorwiegend von Newton geprägten Weltsicht. Entstehung, Aufbau und Dynamik der Sonne werden in Kants Theorie ebenso erklärt wie etwa das Phänomen der Sonnenflecken.

  8. Ultrashort laser pulse driven inverse free electron laser accelerator experiment

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Moody, J. T.; Anderson, S. G.; Anderson, G.

    In this paper we discuss the ultrashort pulse high gradient Inverse Free Electron laser accelerator experiment carried out at the Lawrence Livermore National Laboratory which demonstrated gra- dients exceeding 200 MV/m using a 4 TW 100 fs long 800 nm Ti:Sa laser pulse. Due to the short laser and electron pulse lengths, synchronization was determined to be one of the main challenges in this experiment. This made necessary the implementation of a single-shot, non destructive, electro-optic sampling based diagnostics to enable time-stamping of each laser accelerator shot with < 100 fs accuracy. The results of this experiment are expected tomore » pave the way towards the development of future GeV-class IFEL accelerators.« less

  9. Ultrashort laser pulse driven inverse free electron laser accelerator experiment

    DOE PAGES

    Moody, J. T.; Anderson, S. G.; Anderson, G.; ...

    2016-02-29

    In this paper we discuss the ultrashort pulse high gradient Inverse Free Electron laser accelerator experiment carried out at the Lawrence Livermore National Laboratory which demonstrated gra- dients exceeding 200 MV/m using a 4 TW 100 fs long 800 nm Ti:Sa laser pulse. Due to the short laser and electron pulse lengths, synchronization was determined to be one of the main challenges in this experiment. This made necessary the implementation of a single-shot, non destructive, electro-optic sampling based diagnostics to enable time-stamping of each laser accelerator shot with < 100 fs accuracy. The results of this experiment are expected tomore » pave the way towards the development of future GeV-class IFEL accelerators.« less

  10. B -meson production at forward and backward rapidity in p +p and Cu + Au collisions at √{sN N}=200 GeV

    NASA Astrophysics Data System (ADS)

    Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Akimoto, R.; Alexander, J.; Alfred, M.; Andrieux, V.; Aoki, K.; Apadula, N.; Asano, H.; Atomssa, E. T.; Awes, T. C.; Ayuso, C.; Azmoun, B.; Babintsev, V.; Bagoly, A.; Bai, M.; Bai, X.; Bandara, N. S.; Bannier, B.; Barish, K. N.; Bathe, S.; Baublis, V.; Baumann, C.; Baumgart, S.; Bazilevsky, A.; Beaumier, M.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Black, D.; Blau, D. S.; Boer, M.; Bok, J. S.; Boyle, K.; Brooks, M. L.; Bryslawskyj, J.; Buesching, H.; Bumazhnov, V.; Butler, C.; Butsyk, S.; Campbell, S.; Canoa Roman, V.; Cervantes, R.; Chen, C.-H.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Choi, S.; Christiansen, P.; Chujo, T.; Cianciolo, V.; Citron, Z.; Cole, B. A.; Connors, M.; Cronin, N.; Crossette, N.; Csanád, M.; Csörgő, T.; Danley, T. W.; Datta, A.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Ding, L.; Dion, A.; Dixit, D.; Do, J. H.; D'Orazio, L.; Drapier, O.; Drees, A.; Drees, K. A.; Dumancic, M.; Durham, J. M.; Durum, A.; Elder, T.; Engelmore, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Eyser, K. O.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fleuret, F.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukao, Y.; Fukuda, Y.; Fusayasu, T.; Gainey, K.; Gal, C.; Gallus, P.; Garg, P.; Garishvili, A.; Garishvili, I.; Ge, H.; Giordano, F.; Glenn, A.; Gong, X.; Gonin, M.; Goto, Y.; Granier de Cassagnac, R.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gu, Y.; Gunji, T.; Guragain, H.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamilton, H. F.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haseler, T. O. S.; Hashimoto, K.; Hayano, R.; He, X.; Hemmick, T. K.; Hester, T.; Hill, J. C.; Hill, K.; Hollis, R. S.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Ichihara, T.; Ikeda, Y.; Imai, K.; Imazu, Y.; Imrek, J.; Inaba, M.; Iordanova, A.; Isenhower, D.; Isinhue, A.; Ito, Y.; Ivanishchev, D.; Jacak, B. V.; Jeon, S. J.; Jezghani, M.; Ji, Z.; Jia, J.; Jiang, X.; Johnson, B. M.; Joo, K. S.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kamin, J.; Kanda, S.; Kang, B. H.; Kang, J. H.; Kang, J. S.; Kapukchyan, D.; Kapustinsky, J.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Key, J. A.; Khachatryan, V.; Khandai, P. K.; Khanzadeev, A.; Kijima, K. M.; Kim, C.; Kim, D. J.; Kim, E.-J.; Kim, M.; Kim, M. H.; Kim, Y.-J.; Kim, Y. K.; Kincses, D.; Kistenev, E.; Klatsky, J.; Kleinjan, D.; Kline, P.; Koblesky, T.; Kofarago, M.; Komkov, B.; Koster, J.; Kotchetkov, D.; Kotov, D.; Krizek, F.; Kudo, S.; Kurita, K.; Kurosawa, M.; Kwon, Y.; Lacey, R.; Lai, Y. S.; Lajoie, J. G.; Lallow, E. O.; Lebedev, A.; Lee, D. M.; Lee, G. H.; Lee, J.; Lee, K. B.; Lee, K. S.; Lee, S.; Lee, S. H.; Leitch, M. J.; Leitgab, M.; Leung, Y. H.; Lewis, B.; Lewis, N. A.; Li, X.; Li, X.; Lim, S. H.; Liu, L. D.; Liu, M. X.; Loggins, V.-R.; Loggins, V.-R.; Lökös, S.; Lovasz, K.; Lynch, D.; Maguire, C. F.; Majoros, T.; Makdisi, Y. I.; Makek, M.; Malaev, M.; Manion, A.; Manko, V. I.; Mannel, E.; Masuda, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Meles, A.; Mendoza, M.; Meredith, B.; Metzger, W. J.; Miake, Y.; Mibe, T.; Mignerey, A. C.; Mihalik, D. E.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Miyasaka, S.; Mizuno, S.; Mohanty, A. K.; Mohapatra, S.; Montuenga, P.; Moon, T.; Morrison, D. P.; Morrow, S. I. M.; Moskowitz, M.; Moukhanova, T. V.; Murakami, T.; Murata, J.; Mwai, A.; Nagae, T.; Nagai, K.; Nagamiya, S.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakamiya, Y.; Nakamura, K. R.; Nakamura, T.; Nakano, K.; Nattrass, C.; Netrakanti, P. K.; Nihashi, M.; Niida, T.; Nouicer, R.; Novák, T.; Novitzky, N.; Novotny, R.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Oide, H.; Okada, K.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ottino, G. J.; Ozawa, K.; Pak, R.; Pantuev, V.; Papavassiliou, V.; Park, I. H.; Park, J. S.; Park, S.; Park, S. K.; Pate, S. F.; Patel, L.; Patel, M.; Peng, J.-C.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perezlara, C. E.; Perry, J.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pisani, R. P.; Pun, A.; Purschke, M. L.; Qu, H.; Radzevich, P. V.; Rak, J.; Ravinovich, I.; Read, K. F.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richardson, E.; Richford, D.; Rinn, T.; Riveli, N.; Roach, D.; Rolnick, S. D.; Rosati, M.; Rowan, Z.; Runchey, J.; Ryu, M. S.; Safonov, A. S.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Sawada, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seele, J.; Seidl, R.; Sekiguchi, Y.; Sen, A.; Seto, R.; Sett, P.; Sexton, A.; Sharma, D.; Shaver, A.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shioya, T.; Shoji, K.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Singh, B. K.; Singh, C. P.; Singh, V.; Skoby, M. J.; Skolnik, M.; Slunečka, M.; Smith, K. L.; Snowball, M.; Solano, S.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Steinberg, P.; Stenlund, E.; Stepanov, M.; Ster, A.; Stoll, S. P.; Stone, M. R.; Sugitate, T.; Sukhanov, A.; Sumita, T.; Sun, J.; Syed, S.; Sziklai, J.; Takahara, A.; Takeda, A.; Taketani, A.; Tanaka, Y.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarnai, G.; Tennant, E.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Tomášek, M.; Torii, H.; Towell, C. L.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vargyas, M.; Vazquez-Carson, S.; Vazquez-Zambrano, E.; Veicht, A.; Velkovska, J.; Vértesi, R.; Virius, M.; Vrba, V.; Vukman, N.; Vznuzdaev, E.; Wang, X. R.; Wang, Z.; Watanabe, D.; Watanabe, K.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; Whitaker, S.; Wolin, S.; Wong, C. P.; Woody, C. L.; Wysocki, M.; Xia, B.; Xu, C.; Xu, Q.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yamamoto, H.; Yanovich, A.; Yin, P.; Yokkaichi, S.; Yoo, J. H.; Yoon, I.; You, Z.; Younus, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zharko, S.; Zhou, S.; Zou, L.; Phenix Collaboration

    2017-12-01

    The fraction of J /ψ mesons which come from B -meson decay, FB →J /ψ, is measured for J /ψ rapidity 1.2 <|y |<2.2 and pT>0 in p +p and Cu+Au collisions at √{sNN} = 200 GeV with the PHENIX detector. The extracted fraction is FB →J /ψ=0.025 ±0.006 (stat) ± 0.010(syst) for p +p collisions. For Cu+Au collisions, FB →J /ψ is 0.094 ± 0.028(stat) ± 0.037(syst) in the Au-going direction (-2.2 p +p at both forward and backward rapidity.

  11. Probleme aus der Physik

    NASA Astrophysics Data System (ADS)

    Vogel, Helmut

    Das beliebte Arbeitsbuch "Probleme aus der Physik" bietet nun auch zur 17. Auflage von Gerthsen Vogel "Physik" (ISBN 3-540-56638-4) mit über 1150 gelösten Aufgaben aus der Physik und ihren Anwendungen in Technik, Astrophysik, Geound Biowissenschaften eine Fülle an Material zum Üben und Weiterlernen, zur Prüfungsvorbereitung und zum Selbststudium. Neu hinzugekommen ist ein Kapitel zur nichtlinearen Dynamik. Aufgaben aller Schwierigkeitsgrade machen "Probleme aus der Physik" unentbehrlich für Studenten der Physik im Haupt- und Nebenfach; Schüler der Leistungskurse Physik finden hier eine hervorragende Ergänzung.

  12. Computational assessment of promising mid-infrared nonlinear optical materials Mg–IV–V2 (IV = Si, Ge, Sn; V = P, As): a first-principles study

    NASA Astrophysics Data System (ADS)

    Xiao, Jianping; Zhu, Shifu; Zhao, Beijun; Chen, Baojun; Liu, Hui; He, Zhiyu

    2018-03-01

    The mid-infrared (mid-IR) nonlinear optical (NLO) capabilities of Mg–IV–V2 (IV = Si, Ge, Sn; V = P, As) are systematically assessed by the first-principles calculation. The results show that the compounds in this group except MgSiP2 and MgSnP2 have moderate birefringence values to fulfill the phase-matching conditions. In particular, MgGeP2 and MgSiAs2 possess relatively large band gaps and almost three to four times larger static SHG coefficients than the benchmark material AgGaSe2, exhibiting good potential for mid-IR NLO application. According to the detailed analysis of the electronic structures, it is found that the dominant SHG contributions are from the orbitals of the asymmetry anionic unit [IV–V2]2‑. Moreover, the further evaluation reveals that MgSiAs2, MgGeAs2, MgSnP2 and MgSnAs2 are not thermodynamically stable and the new synthesis strategy (i.e. synthesis under non-equilibrium conditions) should be considered.

  13. Growth and characterization of highly tensile strained Ge{sub 1−x}Sn{sub x} formed on relaxed In{sub y}Ga{sub 1−y}P buffer layers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, Wei; D'Costa, Vijay Richard; Dong, Yuan

    2016-03-28

    Ge{sub 0.94}Sn{sub 0.06} films with high tensile strain were grown on strain-relaxed In{sub y}Ga{sub 1−y}P virtual substrates using solid-source molecular beam epitaxy. The in-plane tensile strain in the Ge{sub 0.94}Sn{sub 0.06} film was varied by changing the In mole fraction in In{sub x}Ga{sub 1−x}P buffer layer. The tensile strained Ge{sub 0.94}Sn{sub 0.06} films were investigated by transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. An in-plane tensile strain of up to 1% in the Ge{sub 0.94}Sn{sub 0.06} was measured, which is much higher than that achieved using other buffer systems. Controlled thermal anneal experiment demonstrated that the strain was notmore » relaxed for temperatures up to 500 °C. The band alignment of the tensile strained Ge{sub 0.94}Sn{sub 0.06} on In{sub 0.77}Ga{sub 0.23}P was obtained by high resolution x-ray photoelectron spectroscopy. The Ge{sub 0.94}Sn{sub 0.06}/In{sub 0.77}Ga{sub 0.23}P interface was found to be of the type I band alignment, with a valence band offset of 0.31 ± 0.12 eV and a conduction band offset of 0.74 ± 0.12 eV.« less

  14. Heterologous Expression of Der Homologs in an Escherichia coli der Mutant and Their Functional Complementation

    PubMed Central

    Choi, Eunsil; Kang, Nalae; Jeon, Young; Pai, Hyun-Sook

    2016-01-01

    ABSTRACT The unique Escherichia coli GTPase Der (double Era-like GTPase), which contains tandemly repeated GTP-binding domains, has been shown to play an essential role in 50S ribosomal subunit biogenesis. The depletion of Der results in the accumulation of precursors of 50S ribosomal subunits that are structurally unstable at low Mg2+ concentrations. Der homologs are ubiquitously found in eubacteria. Conversely, very few are conserved in eukaryotes, and none is conserved in archaea. In the present study, to verify their conserved role in bacterial 50S ribosomal subunit biogenesis, we cloned Der homologs from two gammaproteobacteria, Klebsiella pneumoniae and Salmonella enterica serovar Typhimurium; two pathogenic bacteria, Staphylococcus aureus and Neisseria gonorrhoeae; and the extremophile Deinococcus radiodurans and then evaluated whether they could functionally complement the E. coli der-null phenotype. Only K. pneumoniae and S. Typhimurium Der proteins enabled the E. coli der-null strain to grow under nonpermissive conditions. Sucrose density gradient experiments revealed that the expression of K. pneumoniae and S. Typhimurium Der proteins rescued the structural instability of 50S ribosomal subunits, which was caused by E. coli Der depletion. To determine what allows their complementation, we constructed Der chimeras. We found that only Der chimeras harboring both the linker and long C-terminal regions could reverse the growth defects of the der-null strain. Our findings suggest that ubiquitously conserved essential GTPase Der is involved in 50S ribosomal subunit biosynthesis in various bacteria and that the linker and C-terminal regions may participate in species-specific recognition or interaction with the 50S ribosomal subunit. IMPORTANCE In Escherichia coli, Der (double Era-like GTPase) is an essential GTPase that is important for the production of mature 50S ribosomal subunits. However, to date, its precise role in ribosome biogenesis has not been

  15. DFT investigation on two-dimensional GeS/WS2 van der Waals heterostructure for direct Z-scheme photocatalytic overall water splitting

    NASA Astrophysics Data System (ADS)

    Ju, Lin; Dai, Ying; Wei, Wei; Li, Mengmeng; Huang, Baibiao

    2018-03-01

    Recently, extensive attention has been paid to the direct Z-scheme systems for photocatalytic water splitting where carriers migrate directly between the two semiconductors without a redox mediator. In the present work, the electronic structure and related properties of two-dimensional (2D) van de Waals (vdW) GeS/WX2 (X = O, S, Se, Te) heterojunction are systematically investigated by first-principles calculations. Our results demonstrate that, the GeS/WS2 heterojunction could form a direct Z-scheme system for photocatalytic water splitting, whereas the GeS/WX2 (X = O, Se, Te) can't, because of their respective unsuitable electronic structures. For the GeS/WS2 heterojunction, the GeS and WS2 monolayers serve as photocatalysts for the hydrogen evolution reactionand oxygen evolution reaction, respectively. The internal electric field induced by the electron transfer at the interface can promote the separation of photo-generated charge carriers and formation of the interface Z-scheme electron transfer. Remarkably, the designed GeS/WS2 heterojunction not only enhances the hydrogen production activity of GeS and the oxygen production ability of WS2 but also improves the light absorption of the two monolayers by reducing the band gaps. Moreover, it is found that narrowing the interlayer distance could enhance the internal electric field, improving the photocatalytic ability of the vdW heterojunction. This work provides fundamental insights for further design and preparation of emergent metal dichalcogenide catalysts, beneficial for the development in clean energy.

  16. Direct virtual photon production in Au+Au collisions at √{sNN} = 200 GeV

    NASA Astrophysics Data System (ADS)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Ajitanand, N. N.; Alekseev, I.; Anderson, D. M.; Aoyama, R.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Ashraf, M. U.; Attri, A.; Averichev, G. S.; Bai, X.; Bairathi, V.; Behera, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandenburg, J. D.; Brandin, A. V.; Brown, D.; Bunzarov, I.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chankova-Bunzarova, N.; Chatterjee, A.; Chattopadhyay, S.; Chen, X.; Chen, X.; Chen, J. H.; Cheng, J.; Cherney, M.; Christie, W.; Contin, G.; Crawford, H. J.; Das, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Elsey, N.; Engelage, J.; Eppley, G.; Esha, R.; Esumi, S.; Evdokimov, O.; Ewigleben, J.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Federicova, P.; Fedorisin, J.; Feng, Z.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Fujita, J.; Fulek, L.; Gagliardi, C. A.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, A.; Gupta, S.; Guryn, W.; Hamad, A. I.; Hamed, A.; Harlenderova, A.; Harris, J. W.; He, L.; Heppelmann, S.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Horvat, S.; Huang, B.; Huang, T.; Huang, H. Z.; Huang, X.; Humanic, T. J.; Huo, P.; Igo, G.; Jacobs, W. W.; Jentsch, A.; Jia, J.; Jiang, K.; Jowzaee, S.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z.; Kikoła, D. P.; Kisel, I.; Kisiel, A.; Kochenda, L.; Kocmanek, M.; Kollegger, T.; Kosarzewski, L. K.; Kraishan, A. F.; Kravtsov, P.; Krueger, K.; Kulathunga, N.; Kumar, L.; Kvapil, J.; Kwasizur, J. H.; Lacey, R.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, W.; Li, X.; Li, C.; Li, Y.; Lidrych, J.; Lin, T.; Lisa, M. A.; Liu, Y.; Liu, F.; Liu, H.; Liu, P.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, S.; Luo, X.; Ma, G. L.; Ma, Y. G.; Ma, L.; Ma, R.; Magdy, N.; Majka, R.; Mallick, D.; Margetis, S.; Markert, C.; Matis, H. S.; Meehan, K.; Mei, J. C.; Miller, Z. W.; Minaev, N. G.; Mioduszewski, S.; Mishra, D.; Mizuno, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nie, M.; Nigmatkulov, G.; Niida, T.; Nogach, L. V.; Nonaka, T.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V. A.; Olvitt, D.; Page, B. S.; Pak, R.; Pandit, Y.; Panebratsev, Y.; Pawlik, B.; Pei, H.; Perkins, C.; Pile, P.; Pluta, J.; Poniatowska, K.; Porter, J.; Posik, M.; Poskanzer, A. M.; Pruthi, N. K.; Przybycien, M.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Ray, R. L.; Reed, R.; Rehbein, M. J.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roth, J. D.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Salur, S.; Sandweiss, J.; Saur, M.; Schambach, J.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Schweid, B. R.; Seger, J.; Sergeeva, M.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, A.; Sharma, M. K.; Shen, W. Q.; Shi, Z.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Singha, S.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Solyst, W.; Song, L.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Strikhanov, M.; Stringfellow, B.; Sugiura, T.; Sumbera, M.; Summa, B.; Sun, Y.; Sun, X. M.; Sun, X.; Surrow, B.; Svirida, D. N.; Tang, A. H.; Tang, Z.; Taranenko, A.; Tarnowsky, T.; Tawfik, A.; Thäder, J.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Todoroki, T.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Trzeciak, B. A.; Tsai, O. D.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vasiliev, A. N.; Videbæk, F.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, G.; Wang, Y.; Wang, F.; Wang, Y.; Webb, J. C.; Webb, G.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y.; Xiao, Z. G.; Xie, W.; Xie, G.; Xu, J.; Xu, N.; Xu, Q. H.; Xu, Y. F.; Xu, Z.; Yang, Y.; Yang, Q.; Yang, C.; Yang, S.; Ye, Z.; Ye, Z.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zbroszczyk, H.; Zha, W.; Zhang, Z.; Zhang, X. P.; Zhang, J. B.; Zhang, S.; Zhang, J.; Zhang, Y.; Zhang, J.; Zhang, S.; Zhao, J.; Zhong, C.; Zhou, L.; Zhou, C.; Zhu, X.; Zhu, Z.; Zyzak, M.

    2017-07-01

    We report the direct virtual photon invariant yields in the transverse momentum ranges 1 <pT < 3 GeV / c and 5 <pT < 10 GeV / c at mid-rapidity derived from the dielectron invariant mass continuum region 0.10 GeV /c2 for 0-80% minimum-bias Au+Au collisions at √{sNN} = 200 GeV. A clear excess in the invariant yield compared to the nuclear overlap function TAA scaled p + p reference is observed in the pT range 1 <pT < 3 GeV / c. For pT > 6 GeV / c the production follows TAA scaling. Model calculations with contributions from thermal radiation and initial hard parton scattering are consistent within uncertainties with the direct virtual photon invariant yield.

  17. High energy electron acceleration with PW-class laser system

    NASA Astrophysics Data System (ADS)

    Nakanii, N.; Kondo, K.; Mori, Y.; Miura, E.; Yabuuchi, T.; Tsuji, K.; Suzuki, S.; Asaka, T.; Yanagida, K.; Hanaki, H.; Kobayashi, T.; Makino, K.; Yamane, T.; Miyamoto, S.; Horikawa, K.; Kimura, K.; Takeda, K.; Fukumochi, S.; Kashihara, M.; Tanimoto, T.; Nakamura, H.; Ishikura, T.; Tampo, M.; Kodama, R.; Kitagawa, Y.; Mima, K.; Tanaka, K. A.

    2008-06-01

    We performed electron acceleration experiment with PW-class laser and a plasma tube, which was created by imploding a hollow polystyrene cylinder. In this experiment, electron energies in excess of 600 MeV have been observed. Moreover, the spectra of a comparatively high-density plasma ˜1019 cm-3 had a bump around 10 MeV. Additionally, we performed the absolute sensitivity calibration of imaging plate for 1 GeV electrons from the injector Linac of Spring-8 in order to evaluate absolute number of GeV-class electrons in the laser acceleration experiment.

  18. Zeitlicher Verlauf der avaskulären Nekrose des Hüftkopfes bei Patienten mit Pemphigus vulgaris.

    PubMed

    Balighi, Kamran; Daneshpazhooh, Maryam; Aghazadeh, Nessa; Saeidi, Vahide; Shahpouri, Farzam; Hejazi, Pardis; Chams-Davatchi, Cheyda

    2016-10-01

    Pemphigus vulgaris (PV) wird in der Regel mit systemischen Corticosteroiden und Immunsuppressiva behandelt. Avaskuläre Nekrose (AVN) des Hüftkopfes ist eine gut bekannte schwerere Komplikation einer Corticosteroid-Therapie. Die Charakteristika dieser schweren Komplikation bei PV sind nach wie vor unbekannt. Nicht kontrollierte, retrospektive Untersuchung aller PV-bedingten AVN-Fälle, die in einer iranischen Klinik für bullöse Autoimmunerkrankungen zwischen 1985 und 2013 diagnostiziert wurden. Anhand der Krankenakten von 2321 untersuchten PV-Patienten wurden 45 Fälle (1,93 %) von femoraler AVN identifiziert. Dreißig davon waren Männer. Das mittlere Alter bei der Diagnose der AVN betrug 47,4 ± 14,2 Jahre. Der mittlere Zeitraum zwischen der Diagnose des PV und dem Einsetzen der AVN lag bei 25,3 ± 18,3 Monaten. Mit Ausnahme von acht Fällen (17,8 %) setzte die AVN bei der Mehrheit der Patienten innerhalb von drei Jahren nach Diagnose des PV ein. Die mittlere kumulative Dosis von Prednisolon bei Patienten mit AVN betrug 13.115,8 ± 7041,1 mg. Zwischen der Prednisolon-Gesamtdosis und dem Zeitraum bis zum Einsetzen der AVN bestand eine starke Korrelation (p = 0,001). Bei Patienten mit Alendronateinnahme in der Vorgeschichte war dieser Zeitraum signifikant kürzer (p = 0,01). Die AVN ist eine schwere Komplikation einer Corticosteroid-Behandlung bei Patienten mit PV. Sie wird bei 2 % der Patienten beobachtet und tritt vor allem in den ersten drei Behandlungsjahren auf. Bei Patienten, die höhere Dosen von Prednisolon erhalten, setzt die AVN tendenziell früher ein. © 2016 Deutsche Dermatologische Gesellschaft (DDG). Published by John Wiley & Sons Ltd.

  19. Kinetic study of GeO disproportionation into a GeO{sub 2}/Ge system using x-ray photoelectron spectroscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang Shengkai; Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656; CREST, Japan Science and Technology Agency

    2012-08-06

    GeO disproportionation into GeO{sub 2} and Ge is studied through x-ray photoelectron spectroscopy. Direct evidence for the reaction 2GeO {yields} GeO{sub 2} + Ge after annealing in ultra-high vacuum is presented. Activation energy for GeO disproportionation is found to be about 0.7 {+-} 0.2 eV through kinetic and thermodynamic calculations. A kinetic model of GeO disproportionation is established by considering oxygen transfer in the GeO network. The relationship between GeO disproportionation and GeO desorption induced by GeO{sub 2}/Ge interfacial reaction is discussed, and the apparent contradiction between GeO desorption via interfacial redox reaction and GeO disproportionation into Ge and GeO{submore » 2} is explained by considering the oxygen vacancy.« less

  20. Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode.

    PubMed

    Deng, Yexin; Luo, Zhe; Conrad, Nathan J; Liu, Han; Gong, Yongji; Najmaei, Sina; Ajayan, Pulickel M; Lou, Jun; Xu, Xianfan; Ye, Peide D

    2014-08-26

    Phosphorene, a elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (∼10,000 cm(2)/V·s) and a ∼0.3 eV direct band gap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm(2)/V·s, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness-dependent direct band gap. However, p–n junctions, the basic building blocks of modern electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate-tunable p–n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p–n heterojunction. Upon illumination, these ultrathin p–n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p–n diodes show promise for broad-band photodetection and solar energy harvesting.

  1. Strained layer InP/InGaAs quantum well laser

    NASA Technical Reports Server (NTRS)

    Forouhar, Siamak (Inventor); Larsson, Anders G. (Inventor); Ksendzov, Alexander (Inventor); Lang, Robert J. (Inventor)

    1993-01-01

    Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate.

  2. Morphological and chemical evolution on InP(1 0 0) surface irradiated with femtosecond laser

    NASA Astrophysics Data System (ADS)

    Qian, H. X.; Zhou, W.; Zheng, H. Y.; Lim, G. C.

    2005-12-01

    Single crystalline InP was ablated in air with p-polarized Ti:sapphire femtosecond laser at a fixed laser fluence of 82 mJ/cm 2. Ripples parallel to the laser polarization direction were found by scanning electron microscopy and atomic force microscopy to form for laser pulses ranging from 50 to 1000, whereas flower-like structures appeared for laser pulses of 10 4 and above. Analysis by X-ray photoelectron spectroscopy showed formation of indium and phosphorus oxides on the irradiated surface and the amounts of oxides increased with increasing number of laser pulses. The oxide formation is attributed to chemical reaction between the ultrafast laser ablation plume and oxygen in air, and formation of the flower-like structures is shown to be related to deposition of the oxides on the irradiated surface.

  3. Theoretische Konzepte der Physik

    NASA Astrophysics Data System (ADS)

    Longair, Malcolm S.; Simon, B.; Simon, H.

    "Dies ist kein Lehrbuch der theoretischen Physik, auch kein Kompendium der Physikgeschichte ... , vielmehr eine recht anspruchsvolle Sammlung historischer Miniaturen zur Vergangenheit der theoretischen Physik - ihrer "Sternstunden", wenn man so will. Frei vom Zwang, etwas Erschöpfendes vorlegen zu müssen, gelingt dem Autor etwas Seltenes: einen "lebendigen" Zugang zum Ideengebäude der modernen Physik freizulegen, ... zu zeigen, wie Physik in praxi entsteht... Als Vehikel seiner Absichten dienen dem Autor geschichtliche Fallstudien, insgesamt sieben an der Zahl. Aus ihnen extrahiert er das seiner Meinung nach Lehrhafte, dabei bestrebt, mathematische Anachronismen womöglich zu vermeiden... Als Student hätte ich mir diese gescheiten Essays zum Werden unserer heutigen physikalischen Weltsicht gewünscht. Sie sind originell, didaktisch klug und genieren sich auch nicht, von der Faszination zu sprechen, die ... von der Physik ausgeht. Unnötig darauf hinzuweisen, das sie ein gründliches "konventionelles" Studium weder ersetzen wollen noch können, sie vermögen aber, dazu zu ermuntern." #Astronomische Nachrichten (zur englischen Ausgabe)#1

  4. Strahlungsfeldbedingungen bei der Ionisationsdosimetrie

    NASA Astrophysics Data System (ADS)

    Krieger, Hanno

    Bei der Dosimetrie von Photonenstrahlungen mit luftgefüllten Ionisationskammern werden in diesem Kapitel zwei Grenzfälle unterschieden. Der eine Fall ist die Bedingung des so genannten Sekundärelektronengleichwichts im Kammervolumen. In diesem Fall bestimmen ausschließlich die Photonen im Messvolumen die dosimetrische Anzeige. Der zweite Grenzfall ist gegeben, wenn das Luftvolumen und die Kammer das Strahlungsfeld im Phantom so wenig stören, dass der Sekundärelektronenfluss unverändert bleibt. Diese Bedingungen nennt man BRAGG-GRAY-Bedingungen. Beide Grenzfälle sind in der Praxis nur näherungsweise zu verwirklichen. Abweichungen müssen durch entsprechende Korrekturen oder Kalibrierungen berücksichtigt werden.

  5. Organisationsaspekte in der Umsetzung

    NASA Astrophysics Data System (ADS)

    Balck, Henning; Bungard, Walter; Hofmann, Karsten; Ganz, Walter; Schwenker, Burkhard; Hanßen, Dirk; Meindl, Rudolf; Schloske, Alexander; Thieme, Paul; Teufel, Peter

    Strukturbrüche sind eine der Hauptursachen für die Schwierigkeiten vieler Unternehmen, ihre Organisationsform zu modernisieren und vor allem turbulenten Marktbedingungen anzupassen. Klassische Beispiele für Strukturbrüche finden sich in der Spaltung von Aufbau- und Ablauforganisation, der Spaltung von Produktion und Dienstleistung oder der Spaltung von Planung und Ausführung. Ein wirkungsvoller Ansatz zur Überwindung solcher Spaltungen ist eine Art Versöhnungsmuster: die Polare Organisation. Wesentliche Elemente dieser Organisationsform sind ihr Netzwerkcharakter, kooperatives Zusammenwirken, eine hohe Kommunikationsintensität und eine polare Koppelung der kommunizierenden Partner oder - in abstrahierter Form - die organisierte Balance erfolgskritischer Gegensätze, wie Kosten und Qualität.

  6. Inclusive strange-resonance production in pp,. pi. /sup +/p, and K/sup +/p interactions at 147 GeV/c

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Brick, D.; Rudnicka, H.; Shapiro, A.M.

    1982-05-01

    We have studied the inclusive production of K/sup asteriskplus-or-minus/(890) and Y/sup asteriskplus-or-minus/(1385) in pp, ..pi../sup +/p, and K/sup +/p interactions at 147 GeV/c. The experiment used the Fermilab 30-inch hydrogen bubble chamber with the hybrid spectrometer system. Results are based on a sample of 1916 observed K/sub S/ and 932 observed ..lambda... Inclusive cross sections are given for K/sup asteriskplus-or-minus/ and Y/sup asteriskplus-or-minus/ production from the three beams, and comparisons are made with experiments at other energies. Feynman-x and transverse-momentum-squared distributions are also calculated. The results suggest that the K/sup asterisk-/ is entirely produced in the central region, while themore » K/sup asterisk+/ includes a component from beam fragmentation. Comparisons are made with the additive quark model.« less

  7. Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature

    NASA Astrophysics Data System (ADS)

    Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Izumi, Kohei; Otani, Yohei; Ishizaki, Hiroki; Ono, Toshiro

    2012-09-01

    This paper reports on the thermal improvement of Si3N4/GeNx/Ge structures. After the Si3N4 (5 nm)/GeNx (2 nm) stacks were prepared on Ge substrates by electron-cyclotron-resonance plasma nitridation and sputtering at room temperature, they were thermally annealed in atmospheric N2 + 10% H2 ambient at temperatures from 400 to 600 °C. It was demonstrated that the electronic properties of the GeNx/Ge interfaces were thermally improved at temperatures of up to 500 °C with a minimum interface trap density (Dit) of ˜1×1011 cm-2 eV-1 near the Ge midgap, whereas the interface properties were slightly degraded after annealing at 600 °C with a minimum Dit value of ˜4×1011 cm-2 eV-1.

  8. Chemical and structural arrangement of the trigonal phase in GeSbTe thin films.

    PubMed

    Mio, Antonio M; Privitera, Stefania M S; Bragaglia, Valeria; Arciprete, Fabrizio; Bongiorno, Corrado; Calarco, Raffaella; Rimini, Emanuele

    2017-02-10

    The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crystalline state strongly depend on their phase and on the associated degree of order. The switching of Ge atoms in superlattice structures with trigonal phase has been recently proposed to develop memories with reduced switching energy, in which two differently ordered crystalline phases are the logic states. A detailed knowledge of the stacking plane sequence, of the local composition and of the vacancy distribution is therefore crucial in order to understand the underlying mechanism of phase transformations in the crystalline state and to evaluate the retention properties. This information is provided, as reported in this paper, by scanning transmission electron microscopy analysis of polycrystalline and epitaxial Ge 2 Sb 2 Te 5 thin samples, using the Z-contrast high-angle annular dark field method. Electron diffraction clearly confirms the presence of compositional mixing with stacking blocks of 11, 9 or 7 planes corresponding to Ge 3 Sb 2 Te 6 , Ge 2 Sb 2 Te 5 , and GeSb 2 Te 4 , alloys respectively in the same trigonal phase. By increasing the degree of order (according to the annealing temperature, the growth condition, etc) the spread in the statistical distribution of the blocks reduces and the distribution of the atoms in the cation planes also changes from a homogenous Ge/Sb mixing towards a Sb-enrichment in the planes closest to the van der Waals gaps. Therefore we show that the trigonal phase of Ge 2 Sb 2 Te 5 , the most studied chalcogenide for phase-change memories, is actually obtained in different configurations depending on the distribution of the stacking blocks (7-9-11 planes) and on the atomic occupation (Ge/Sb) at the cation planes. These results give an insight in the factors determining the stability of the trigonal phase and suggest a dynamic path evolution that could have a key role in the switching mechanism of interfacial phase change memories

  9. Scanning Probe Microscopy and Electrical Transport Studies of Ferroelectric Thin Films and 2D van der Waals Materials

    NASA Astrophysics Data System (ADS)

    Xiao, Zhiyong

    In this dissertation, I present the scanning microscopy and electrical transport studies of ferroelectric thin films and ferroic/2D van der Waals heterostructures. Based on the conducting probe atomic force microscopy and piezo-response force microscopy (PFM) studies of the static and dynamic behavior of ferroelectric domain walls (DW), we found that the ferroelectric polymer poly(vinylidene-fluoride-trifluorethylene) P(VDF-TrFE) is composed of two-dimensional (2D) ferroelectric monolayers (MLs) that are weakly coupled to each other. We also observed polarization asymmetry in epitaxial thin films of ferroelectric Pb(Zr,Ti)O3, which is attributed to the screening properties of the underlying conducting oxide. PFM studies also reveal ferroelectric relaxor-type behavior in ultrathin Sr(Zr,Ti)O3 films epitaxially deposited on Ge. We exploited scanning-probe-controlled domain patterning in a P(VDF-TrFE) top layer to induce nonvolatile modulation of the conduction characteristic of ML molybdenum disulfide (MoS2) between a transistor and a junction state. In the presence of a DW, MoS2 exhibits rectified Ids-Vds (IV) characteristics that are well described by the thermionic emission model. This approach can be applied to a wide range of van der Waals materials to design various functional homojunctions and nanostructures. We also studied the interfacial charge transfer effect between graphene and magnetoelectric Cr2O3 via electrostatic force microscopy and Kelvin probe force microscopy, which reveal p-type doping with up to 150 meV shift of the Fermi level. The graphene/Cr2O3 heterostructure is promising for developing magnetoelectric graphene transistors for spintronic applications.

  10. Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser

    NASA Astrophysics Data System (ADS)

    Qing, Ke; Shaoyang, Tan; Songtao, Liu; Dan, Lu; Ruikang, Zhang; Wei, Wang; Chen, Ji

    2015-09-01

    A comprehensive design optimization of 1.55-μm high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency (ηi) while maintaining the low internal loss (αi) of the device, thereby achieving high power operation. Four different waveguide structures of broad area lasers were fabricated and characterized in depth. Through theoretical analysis and experiment verifications, we show that laser structures with stepped waveguide and thin upper separate confinement layer will result in high ηi and overall slope efficiency. A continuous wave (CW) single side output power of 160 mW was obtained for an uncoated laser with a 50-μm active area width and 1 mm cavity length. Project supported by the National Natural Science Foundation of China (Nos. 61274046, 61201103) and the National High Technology Research and Development Program of China (No. 2013AA014202).

  11. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    NASA Astrophysics Data System (ADS)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  12. Editorial: Focus on Laser- and Beam-Driven Plasma Accelerators

    NASA Astrophysics Data System (ADS)

    Joshi, Chan; Malka, Victor

    2010-04-01

    , S Mangles, L O Silva, R Fonseca and P A Norreys Electro-optic shocks from blowout laser wakefields D F Gordon, A Ting, M H Helle, D Kaganovich and B Hafizi Onset of self-steepening of intense laser pulses in plasmas J Vieira, F Fiúza, L O Silva, M Tzoufras and W B Mori Analysis of laser wakefield dynamics in capillary tubes N E Andreev, K Cassou, F Wojda, G Genoud, M Burza, O Lundh, A Persson, B Cros, V E Fortov and C-G Wahlstrom Characterization of the beam loading effects in a laser plasma accelerator C Rechatin, J Faure, X Davoine, O Lundh, J Lim, A Ben-Ismaïl, F Burgy, A Tafzi, A Lifschitz, E Lefebvre and V Malka Energy gain scaling with plasma length and density in the plasma wakefield accelerator P Muggli, I Blumenfeld, C E Clayton, F J Decker, M J Hogan, C Huang, R Ischebeck, R H Iverson, C Joshi, T Katsouleas, N Kirby, W Lu, K A Marsh, W B Mori, E Oz, R H Siemann, D R Walz and M Zhou Generation of tens of GeV quasi-monoenergetic proton beams from a moving double layer formed by ultraintense lasers at intensity 1021-1023Wcm-2 Lu-Le Yu, Han Xu, Wei-Min Wang, Zheng-Ming Sheng, Bai-Fei Shen, Wei Yu and Jie Zhang Carbon ion acceleration from thin foil targets irradiated by ultrahigh-contrast, ultraintense laser pulses D C Carroll, O Tresca, R Prasad, L Romagnani, P S Foster, P Gallegos, S Ter-Avetisyan, J S Green, M J V Streeter, N Dover, C A J Palmer, C M Brenner, F H Cameron, K E Quinn, J Schreiber, A P L Robinson, T Baeva, M N Quinn, X H Yuan, Z Najmudin, M Zepf, D Neely, M Borghesi and P McKenna Numerical modelling of a 10-cm-long multi-GeV laser wakefield accelerator driven by a self-guided petawatt pulse S Y Kalmykov, S A Yi, A Beck, A F Lifschitz, X Davoine, E Lefebvre, A Pukhov, V Khudik, G Shvets, S A Reed, P Dong, X Wang, D Du, S Bedacht, R Zgadzaj, W Henderson, A Bernstein, G Dyer, M Martinez, E Gaul, T Ditmire and M C Downer Effects of laser prepulses on laser-induced proton generation D Batani, R Jafer, M Veltcheva, R Dezulian, O Lundh, F Lindau, A

  13. Germanium Sub-Microspheres Synthesized by Picosecond Pulsed Laser Melting in Liquids: Educt Size Effects

    PubMed Central

    Zhang, Dongshi; Lau, Marcus; Lu, Suwei; Barcikowski, Stephan; Gökce, Bilal

    2017-01-01

    Pulsed laser melting in liquid (PLML) has emerged as a facile approach to synthesize submicron spheres (SMSs) for various applications. Typically lasers with long pulse durations in the nanosecond regime are used. However, recent findings show that during melting the energy absorbed by the particle will be dissipated promptly after laser-matter interaction following the temperature decrease within tens of nanoseconds and hence limiting the efficiency of longer pulse widths. Here, the feasibility to utilize a picosecond laser to synthesize Ge SMSs (200~1000 nm in diameter) is demonstrated by irradiating polydisperse Ge powders in water and isopropanol. Through analyzing the educt size dependent SMSs formation mechanism, we find that Ge powders (200~1000 nm) are directly transformed into SMSs during PLML via reshaping, while comparatively larger powders (1000~2000 nm) are split into daughter SMSs via liquid droplet bisection. Furthermore, the contribution of powders larger than 2000 nm and smaller than 200 nm to form SMSs is discussed. This work shows that compared to nanosecond lasers, picosecond lasers are also suitable to produce SMSs if the pulse duration is longer than the material electron-phonon coupling period to allow thermal relaxation. PMID:28084408

  14. High-Temperature Specific Heat of the TmBiGeO5 and YbBiGeO5 Compounds

    NASA Astrophysics Data System (ADS)

    Denisova, L. T.; Belousova, N. V.; Galiakhmetova, N. A.; Denisov, V. M.; Golubeva, E. O.

    2018-02-01

    The TmBiGeO5 and YbBiGeO5 compounds have been synthesized from Tm2O3 (Yb2O3), Bi2O3, and GeO2 oxides by the solid-state synthesis with successive burning at 1003, 1073, 1123, 1143, 1173, and 1223 K. High-temperature specific heat of the oxide compounds has been measured by differential scanning calorimetry. Basing on the experimental dependences C p = f( T), the thermodynamic properties of the oxide compounds, i.e., the enthalpy and entropy variations, have been calculated.

  15. Dynamics and Fragmentation of Hydrogen Bonded and van der Waal Clusters upon 26.5 eV Soft X-ray Laser Ionization

    NASA Astrophysics Data System (ADS)

    Dong, Feng; Heinbuch, Scott; Bernstein, Elliot; Rocca, Jorge

    2006-05-01

    A desk-top soft x-ray laser is applied to the study of water, methanol, ammonia, sulfur dioxide, carbon dioxide, mixed sulfur dioxide-water, and mixed carbon dioxide-water clusters through single photon ionization time of flight mass spectroscopy. Almost all of the energy above the vertical ionization energy is removed by the ejected electron. Protonated water, methanol, and ammonia clusters dominate the mass spectra for the first three systems. The temperatures of the neutral water and methanol clusters can be estimated. In the case of pure SO2 and CO2, the mass spectra are dominated by (SO2)n^+ and (CO2)n^+ cluster series. When a high or low concentration of SO2/CO2 is mixed with water, we observe (SO2/CO2)nH2O^+ or SO2/CO2(H2O)nH^+ in the mass spectra, respectively. The unimolecular dissociation rate constants for reactions involving loss of one neutral molecule are calculated for the protonated water, methanol, and ammonia clusters as well as for SO2 and CO2 clusters. We find that the 26.5 eV soft x-ray laser is a nearly ideal tool for the study of hydrogen bonded and van der Waals cluster systems and we are currently exploring its usefulness for other more strongly bound systems.

  16. Development of Si/SiGe heterostructures

    NASA Astrophysics Data System (ADS)

    Hauenstein, R. J.; Veteran, J. L.; Young, M. H.

    1991-01-01

    New molecular beam epitaxy (MBE) materials growth and doping processes were developed for the fabrication of Si/SiGe heterostructure devices. These new materials processes are applied to the demonstration of cryogenic n-p-n Si/Si 1-x Gex/Si heterojunction bipolar transistors (HBT). This application has special significance as an enabling DoD technology for fast low noise, high performance readout and signal processing circuits for IR focal systems. Reliable, versatile methods were developed to grow very high quality Si/SiGe strained layer heterostructures and multilayers. In connection with this program methods were developed to dope the Si and SiGe with B, Sb and Ga. B and Sb were found to be the preferred dopants for p and n regions respectively, of the HBT devices. The test devices clearly displayed gain enhancement due to the heterojunction and provided useful gains from room temperature down to 10 K.

  17. Measurements of e+e- pairs from open heavy flavor in p +p and d +A collisions at √{sNN}=200 GeV

    NASA Astrophysics Data System (ADS)

    Adare, A.; Afanasiev, S.; Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Al-Bataineh, H.; Alexander, J.; Alfred, M.; Aoki, K.; Apadula, N.; Aphecetche, L.; Asai, J.; Atomssa, E. T.; Averbeck, R.; Awes, T. C.; Ayuso, C.; Azmoun, B.; Babintsev, V.; Bagoly, A.; Bai, M.; Baksay, G.; Baksay, L.; Baldisseri, A.; Barish, K. N.; Barnes, P. D.; Bassalleck, B.; Basye, A. T.; Bathe, S.; Batsouli, S.; Baublis, V.; Baumann, C.; Bazilevsky, A.; Belikov, S.; Belmont, R.; Bennett, R.; Berdnikov, A.; Berdnikov, Y.; Bickley, A. A.; Blau, D. S.; Boer, M.; Boissevain, J. G.; Bok, J. S.; Borel, H.; Boyle, K.; Brooks, M. L.; Bryslawskyj, J.; Buesching, H.; Bumazhnov, V.; Bunce, G.; Butler, C.; Butsyk, S.; Camacho, C. M.; Campbell, S.; Canoa Roman, V.; Chang, B. S.; Chang, W. C.; Charvet, J.-L.; Chernichenko, S.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choudhury, R. K.; Chujo, T.; Chung, P.; Churyn, A.; Cianciolo, V.; Citron, Z.; Cole, B. A.; Connors, M.; Constantin, P.; Csanád, M.; Csörgő, T.; Dahms, T.; Dairaku, S.; Danley, T. W.; Das, K.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; D'Enterria, D.; Deshpande, A.; Desmond, E. J.; Dietzsch, O.; Dion, A.; Do, J. H.; Donadelli, M.; Drapier, O.; Drees, A.; Drees, K. A.; Dubey, A. K.; Dumancic, M.; Durham, J. M.; Durum, A.; Dutta, D.; Dzhordzhadze, V.; Efremenko, Y. V.; Elder, T.; Ellinghaus, F.; Engelmore, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Eyser, K. O.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fleuret, F.; Fokin, S. L.; Fraenkel, Z.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fujiwara, K.; Fukao, Y.; Fukuda, Y.; Fusayasu, T.; Gal, C.; Garishvili, I.; Ge, H.; Glenn, A.; Gong, H.; Gonin, M.; Gosset, J.; Goto, Y.; Granier de Cassagnac, R.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gunji, T.; Gustafsson, H.-Å.; Hachiya, T.; Hadj Henni, A.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Han, R.; Han, S. Y.; Hartouni, E. P.; Haruna, K.; Hasegawa, S.; Haseler, T. O. S.; Haslum, E.; Hayano, R.; He, X.; Heffner, M.; Hemmick, T. K.; Hester, T.; Hill, J. C.; Hill, K.; Hohlmann, M.; Holzmann, W.; Homma, K.; Hong, B.; Horaguchi, T.; Hornback, D.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Ichihara, T.; Ichimiya, R.; Iinuma, H.; Ikeda, Y.; Imai, K.; Imrek, J.; Inaba, M.; Isenhower, D.; Ishihara, M.; Isobe, T.; Issah, M.; Isupov, A.; Ito, Y.; Ivanishchev, D.; Jacak, B. V.; Ji, Z.; Jia, J.; Jin, J.; Johnson, B. M.; Joo, K. S.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kajihara, F.; Kametani, S.; Kamihara, N.; Kamin, J.; Kang, J. H.; Kapukchyan, D.; Kapustinsky, J.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Kempel, T.; Khachatryan, V.; Khanzadeev, A.; Kijima, K. M.; Kikuchi, J.; Kim, B. I.; Kim, C.; Kim, D. H.; Kim, D. J.; Kim, E.; Kim, E.-J.; Kim, M.; Kim, M. H.; Kim, S. H.; Kincses, D.; Kinney, E.; Kiriluk, K.; Kiss, Á.; Kistenev, E.; Klay, J.; Klein-Boesing, C.; Koblesky, T.; Kochenda, L.; Komkov, B.; Konno, M.; Koster, J.; Kotov, D.; Kozlov, A.; Král, A.; Kravitz, A.; Kudo, S.; Kunde, G. J.; Kurita, K.; Kurosawa, M.; Kweon, M. J.; Kwon, Y.; Kyle, G. S.; Lacey, R.; Lai, Y. S.; Lajoie, J. G.; Lallow, E. O.; Layton, D.; Lebedev, A.; Lee, D. M.; Lee, K. B.; Lee, T.; Leitch, M. J.; Leite, M. A. L.; Lenzi, B.; Leung, Y. H.; Lewis, N. A.; Li, X.; Li, X.; Liebing, P.; Lim, S. H.; Liška, T.; Litvinenko, A.; Liu, H.; Liu, L. D.; Liu, M. X.; Loggins, V.-R.; Lokos, S.; Love, B.; Lynch, D.; Maguire, C. F.; Majoros, T.; Makdisi, Y. I.; Makek, M.; Malakhov, A.; Malik, M. D.; Manko, V. I.; Mannel, E.; Mao, Y.; Mašek, L.; Masui, H.; Matathias, F.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; Means, N.; Meredith, B.; Miake, Y.; Mignerey, A. C.; Mihalik, D. E.; Mikeš, P.; Miki, K.; Milov, A.; Mishra, M.; Mitchell, J. T.; Mitsuka, G.; Mohanty, A. K.; Moon, T.; Morino, Y.; Morreale, A.; Morrison, D. P.; Morrow, S. I. M.; Moukhanova, T. V.; Mukhopadhyay, D.; Murakami, T.; Murata, J.; Nagai, K.; Nagamiya, S.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Naglis, M.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakamiya, Y.; Nakamura, T.; Nakano, K.; Nattrass, C.; Newby, J.; Nguyen, M.; Niida, T.; Nouicer, R.; Novák, T.; Novitzky, N.; Novotny, R.; Nyanin, A. S.; O'Brien, E.; Oda, S. X.; Ogilvie, C. A.; Oka, M.; Okada, K.; Onuki, Y.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ouchida, M.; Ozawa, K.; Pak, R.; Palounek, A. P. T.; Pantuev, V.; Papavassiliou, V.; Park, J.; Park, J. S.; Park, S.; Park, W. J.; Pate, S. F.; Patel, M.; Pei, H.; Peng, J.-C.; Peng, W.; Pereira, H.; Perepelitsa, D. V.; Perera, G. D. N.; Peresedov, V.; Peressounko, D. Yu.; Perezlara, C. E.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pun, A.; Purschke, M. L.; Purwar, A. K.; Qu, H.; Radzevich, P. V.; Rak, J.; Rakotozafindrabe, A.; Ravinovich, I.; Read, K. F.; Rembeczki, S.; Reygers, K.; Riabov, V.; Riabov, Y.; Richford, D.; Rinn, T.; Roach, D.; Roche, G.; Rolnick, S. D.; Rosati, M.; Rosendahl, S. S. E.; Rosnet, P.; Rowan, Z.; Rukoyatkin, P.; Runchey, J.; Ružička, P.; Rykov, V. L.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sakai, S.; Sakashita, K.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Sato, T.; Sawada, S.; Schaefer, B.; Schmoll, B. K.; Schmoll, B. K.; Sedgwick, K.; Seele, J.; Seidl, R.; Semenov, A. Yu.; Semenov, V.; Sen, A.; Seto, R.; Sexton, A.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shoji, K.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Silvestre, C.; Sim, K. S.; Singh, B. K.; Singh, C. P.; Singh, V.; Skoby, M. J.; Slunečka, M.; Smith, K. L.; Soldatov, A.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Staley, F.; Stankus, P. W.; Stenlund, E.; Stepanov, M.; Ster, A.; Stoll, S. P.; Sugitate, T.; Suire, C.; Sukhanov, A.; Syed, S.; Sziklai, J.; Takagui, E. M.; Taketani, A.; Tanabe, R.; Tanaka, Y.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarján, P.; Tarnai, G.; Themann, H.; Thomas, T. L.; Tieulent, R.; Timilsina, A.; Togawa, M.; Toia, A.; Tomášek, L.; Tomášek, M.; Tomita, Y.; Torii, H.; Towell, C. L.; Towell, R. S.; Tram, V.-N.; Tserruya, I.; Tsuchimoto, Y.; Ueda, Y.; Ujvari, B.; Vale, C.; Valle, H.; van Hecke, H. W.; Vazquez-Carson, S.; Veicht, A.; Velkovska, J.; Vértesi, R.; Vinogradov, A. A.; Virius, M.; Vrba, V.; Vznuzdaev, E.; Wang, X. R.; Wang, Z.; Watanabe, Y.; Wei, F.; Wessels, J.; White, S. N.; Winter, D.; Wong, C. P.; Woody, C. L.; Wysocki, M.; Xie, W.; Xu, C.; Xu, Q.; Yamaguchi, Y. L.; Yamaura, K.; Yang, R.; Yanovich, A.; Yin, P.; Ying, J.; Yokkaichi, S.; Yoo, J. H.; Yoon, I.; Young, G. R.; Younus, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zaudtke, O.; Zhang, C.; Zharko, S.; Zhou, S.; Zolin, L.; Zou, L.; Phenix Collaboration

    2017-08-01

    We report a measurement of e+e- pairs from semileptonic heavy-flavor decays in p +p collisions at √{s NN}=200 GeV. The e+e- pair yield from b b ¯ and c c ¯ is separated by exploiting a double differential fit done simultaneously in dielectron invariant mass and pT. We used three different event generators, pythia, mc@nlo, and powheg, to simulate the e+e- spectra from c c ¯ and b b ¯ production. The data can be well described by all three generators within the detector acceptance. However, when using the generators to extrapolate to 4 π , significant differences are observed for the total cross section. These difference are less pronounced for b b ¯ than for c c ¯ . The same model dependence was observed in already published d +A data. The p +p data are also directly compared with d +A data in mass and pT, and within the statistical accuracy no nuclear modification is seen.

  18. Partial wave analysis of the reaction p(3.5 GeV) + ppK + Λ to search for the "ppK –" bound state

    DOE PAGES

    Agakishiev, G.; Arnold, O.; Belver, D.; ...

    2015-01-26

    Employing the Bonn–Gatchina partial wave analysis framework (PWA), we have analyzed HADES data of the reaction p(3.5GeV) + ppK +Λ. This reaction might contain information about the kaonic cluster “ppK -” (with quantum numbers J P=0 - and total isospin I =1/2) via its decay into pΛ. Due to interference effects in our coherent description of the data, a hypothetical K ¯NN (or, specifically “ppK -”) cluster signal need not necessarily show up as a pronounced feature (e.g. a peak) in an invariant mass spectrum like pΛ. Our PWA analysis includes a variety of resonant and non-resonant intermediatemore » states and delivers a good description of our data (various angular distributions and two-hadron invariant mass spectra) without a contribution of a K ¯NN cluster. At a confidence level of CL s=95% such a cluster cannot contribute more than 2–12% to the total cross section with a pK + Λ final state, which translates into a production cross-section between 0.7 μb and 4.2 μb, respectively. The range of the upper limit depends on the assumed cluster mass, width and production process.« less

  19. Magnetic structure and phase stability of the van der Waals bonded ferromagnet Fe 3-xGeTe 2

    DOE PAGES

    May, Andrew F.; Calder, Stuart A.; Cantoni, Claudia; ...

    2016-01-08

    The magnetic structure and phase diagram of the layered ferromagnetic compound Fe 3GeTe 2 have been investigated by a combination of synthesis, x-ray and neutron diffraction, high-resolution microscopy, and magnetization measurements. Single crystals were synthesized by self-flux reactions, and single-crystal neutron diffraction finds ferromagnetic order with moments of 1.11(5)μ B/Fe aligned along the c axis at 4 K. These flux-grown crystals have a lower Curie temperature T c ≈ 150 K than crystals previously grown by vapor transport (T c = 220 K). The difference is a reduced Fe content in the flux-grown crystals, as illustrated by the behavior observedmore » in a series of polycrystalline samples. As Fe content decreases, so do the Curie temperature, magnetic anisotropy, and net magnetization. Furthermore, Hall-effect and thermoelectric measurements on flux-grown crystals suggest that multiple carrier types contribute to electrical transport in Fe 3–xGeTe 2 and structurally similar Ni 3–xGeTe 2.« less

  20. Component-Resolved Diagnostic Study of Dermatophagoides Pteronyssinus Major Allergen Molecules in a Southern Chinese Cohort.

    PubMed

    Zeng, G; Luo, W; Zheng, P; Wei, N; Huang, H; Sun, B; Zhao, X

    2015-01-01

    Little is known about component-resolved diagnosis (CRD) for Dermatophagoides pteronyssinus (Der p) sensitization in the Chinese population. We aimed to evaluate sensitization to Der p components in southern China. Two-hundred immunotherapy-naïve patients with asthma and/or rhinitis positive to specific IgE (sIgE) against Der p extract, along with 20 Der p-negative nonallergic healthy controls, were tested for sIgE against Der p 1, Der p 2, and Der p 10 using ImmunoCAP 100. Seventy-five were further examined with the ImmunoCAP Immuno Solid-phase Allergen Chip (ISAC). Der p 10-positive patients were also tested for sIgE against crude extracts of cockroach, moth, and shrimp. In total, 183 (91.5%) of the 200 patients were sensitized to Der p 1 and/or Der p 2. The proportion of positive results and the median level of s1gE against Der p 1 were higher in children than in adults. Der p 1 and Der p 2 correlated with Der p in sIgE levels. ImmunoCAP ISAC demonstrated 100% specificity and 84% sensitivity in detecting Der p 1, Der p 2, and Der p 10 compared with ImmunoCAP 100. Sensitization to Der p 10 correlated well with sIgE to shrimp, moths, cockroaches, Pen m 1, Bla g 7, and Ani s 3. The detection of Der p 1 and Der p 2 provided a good reflection of atopy to Der p in a Chinese cohort. Sensitization to Der p 10 may result from cross-reactivity with seafood and cockroaches in coastal southern China. ImmunoCAP ISAC may be a useful tool for CRD, with comparable performance to ImmunoCAP 100.

  1. Spectral temperatures of {Delta}{sup 0}(1232) resonances produced in p{sup 12}C and d{sup 12}C collisions at 4.2 GeV/c per nucleon

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Khan, Imran; Olimov, Kh. K., E-mail: olimov@comsats.edu.pk

    The reconstructed experimental transverse momentum (p{sub t}) distributions of {Delta}{sup 0}(1232) resonances produced in p{sup 12}C and d{sup 12}C collisions at 4.2 A GeV/c and the corresponding spectra calculated using Modified FRITIOF model were analyzed in the framework of Hagedorn Thermodynamic Model. The spectral temperatures of {Delta}{sup 0}(1232) resonances were extracted from fitting their p{sub t} spectra with one-temperature Hagedorn function. The extracted spectral temperatures of {Delta}{sup 0}(1232) were compared with the corresponding temperatures of {pi}{sup -} mesons in p{sup 12}C and d{sup 12}C collisions at 4.2 A GeV/c obtained similarly from fitting the p{sub t} spectra of {pi}{sup -}more » by one-temperature Hagedorn function. The spectral temperatures of {Delta}{sup 0}(1232) resonances agreed within uncertainties with the corresponding temperatures of {pi}{sup -} mesons produced in p{sup 12}C and d{sup 12}C collisions at 4.2 A GeV/c.« less

  2. Measurements of e + e - pairs from open heavy flavor in p + p and d + A collisions at s NN = 200 GeV

    DOE PAGES

    Adare, A.; Afanasiev, S.; Aidala, C.; ...

    2017-08-18

    In this paper, we report a measurement of e +e - pairs from semileptonic heavy-flavor decays in p + p collisions at √sNN = 200 GeV. The e +e - pair yield frommore » $$b\\overline{b}$$ and $$c\\overline{c}$$ is separated by exploiting a double differential fit done simultaneously in dielectron invariant mass and p T. We used three different event generators, pythia, mc@nlo, and powheg, to simulate the e +e - spectra from $$c\\overline{c}$$ and $$b\\overline{b}$$ production. The data can be well described by all three generators within the detector acceptance. However, when using the generators to extrapolate to 4π, significant differences are observed for the total cross section. These difference are less pronounced for $$b\\overline{b}$$ than for $$c\\overline{c}$$. The same model dependence was observed in already published d + A data. Lastly, the p + p data are also directly compared with d + A data in mass and p T, and within the statistical accuracy no nuclear modification is seen.« less

  3. Measurements of e + e - pairs from open heavy flavor in p + p and d + A collisions at s NN = 200 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adare, A.; Afanasiev, S.; Aidala, C.

    In this paper, we report a measurement of e +e - pairs from semileptonic heavy-flavor decays in p + p collisions at √sNN = 200 GeV. The e +e - pair yield frommore » $$b\\overline{b}$$ and $$c\\overline{c}$$ is separated by exploiting a double differential fit done simultaneously in dielectron invariant mass and p T. We used three different event generators, pythia, mc@nlo, and powheg, to simulate the e +e - spectra from $$c\\overline{c}$$ and $$b\\overline{b}$$ production. The data can be well described by all three generators within the detector acceptance. However, when using the generators to extrapolate to 4π, significant differences are observed for the total cross section. These difference are less pronounced for $$b\\overline{b}$$ than for $$c\\overline{c}$$. The same model dependence was observed in already published d + A data. Lastly, the p + p data are also directly compared with d + A data in mass and p T, and within the statistical accuracy no nuclear modification is seen.« less

  4. Parametric study of transport beam lines for electron beams accelerated by laser-plasma interaction

    NASA Astrophysics Data System (ADS)

    Scisciò, M.; Lancia, L.; Migliorati, M.; Mostacci, A.; Palumbo, L.; Papaphilippou, Y.; Antici, P.

    2016-03-01

    In the last decade, laser-plasma acceleration of high-energy electrons has attracted strong attention in different fields. Electrons with maximum energies in the GeV range can be laser-accelerated within a few cm using multi-hundreds terawatt (TW) lasers, yielding to very high beam currents at the source (electron bunches with up to tens-hundreds of pC in a few fs). While initially the challenge was to increase the maximum achievable electron energy, today strong effort is put in the control and usability of these laser-generated beams that still lack of some features in order to be used for applications where currently conventional, radio-frequency (RF) based, electron beam lines represent the most common and efficient solution. Several improvements have been suggested for this purpose, some of them acting directly on the plasma source, some using beam shaping tools located downstream. Concerning the latter, several studies have suggested the use of conventional accelerator magnetic devices (such as quadrupoles and solenoids) as an easy implementable solution when the laser-plasma accelerated beam requires optimization. In this paper, we report on a parametric study related to the transport of electron beams accelerated by laser-plasma interaction, using conventional accelerator elements and tools. We focus on both, high energy electron beams in the GeV range, as produced on petawatt (PW) class laser systems, and on lower energy electron beams in the hundreds of MeV range, as nowadays routinely obtained on commercially available multi-hundred TW laser systems. For both scenarios, our study allows understanding what are the crucial parameters that enable laser-plasma accelerators to compete with conventional ones and allow for a beam transport. We show that suitable working points require a tradeoff-combination between low beam divergence and narrow energy spread.

  5. Parametric study of transport beam lines for electron beams accelerated by laser-plasma interaction

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Scisciò, M.; Antici, P., E-mail: patrizio.antici@polytechnique.edu; INRS-EMT, Université du Québec, 1650 Lionel Boulet, Varennes, Québec J3X 1S2

    2016-03-07

    In the last decade, laser-plasma acceleration of high-energy electrons has attracted strong attention in different fields. Electrons with maximum energies in the GeV range can be laser-accelerated within a few cm using multi-hundreds terawatt (TW) lasers, yielding to very high beam currents at the source (electron bunches with up to tens-hundreds of pC in a few fs). While initially the challenge was to increase the maximum achievable electron energy, today strong effort is put in the control and usability of these laser-generated beams that still lack of some features in order to be used for applications where currently conventional, radio-frequencymore » (RF) based, electron beam lines represent the most common and efficient solution. Several improvements have been suggested for this purpose, some of them acting directly on the plasma source, some using beam shaping tools located downstream. Concerning the latter, several studies have suggested the use of conventional accelerator magnetic devices (such as quadrupoles and solenoids) as an easy implementable solution when the laser-plasma accelerated beam requires optimization. In this paper, we report on a parametric study related to the transport of electron beams accelerated by laser-plasma interaction, using conventional accelerator elements and tools. We focus on both, high energy electron beams in the GeV range, as produced on petawatt (PW) class laser systems, and on lower energy electron beams in the hundreds of MeV range, as nowadays routinely obtained on commercially available multi-hundred TW laser systems. For both scenarios, our study allows understanding what are the crucial parameters that enable laser-plasma accelerators to compete with conventional ones and allow for a beam transport. We show that suitable working points require a tradeoff-combination between low beam divergence and narrow energy spread.« less

  6. Measurement of Υ (1 S +2 S +3 S ) production in p +p and Au + Au collisions at √{sNN}=200 GeV

    NASA Astrophysics Data System (ADS)

    Adare, A.; Afanasiev, S.; Aidala, C.; Ajitanand, N. N.; Akiba, Y.; Akimoto, R.; Al-Bataineh, H.; Al-Ta'Ani, H.; Alexander, J.; Angerami, A.; Aoki, K.; Apadula, N.; Aphecetche, L.; Aramaki, Y.; Asai, J.; Asano, H.; Aschenauer, E. C.; Atomssa, E. T.; Averbeck, R.; Awes, T. C.; Azmoun, B.; Babintsev, V.; Bai, M.; Baksay, G.; Baksay, L.; Baldisseri, A.; Bannier, B.; Barish, K. N.; Barnes, P. D.; Bassalleck, B.; Basye, A. T.; Bathe, S.; Batsouli, S.; Baublis, V.; Baumann, C.; Baumgart, S.; Bazilevsky, A.; Belikov, S.; Belmont, R.; Bennett, R.; Berdnikov, A.; Berdnikov, Y.; Bickley, A. A.; Bing, X.; Blau, D. S.; Boissevain, J. G.; Bok, J. S.; Borel, H.; Boyle, K.; Brooks, M. L.; Buesching, H.; Bumazhnov, V.; Bunce, G.; Butsyk, S.; Camacho, C. M.; Campbell, S.; Castera, P.; Chang, B. S.; Chang, W. C.; Charvet, J.-L.; Chen, C.-H.; Chernichenko, S.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Choi, S.; Choudhury, R. K.; Christiansen, P.; Chujo, T.; Chung, P.; Churyn, A.; Chvala, O.; Cianciolo, V.; Citron, Z.; Cole, B. A.; Connors, M.; Constantin, P.; Csanád, M.; Csörgő, T.; Dahms, T.; Dairaku, S.; Das, K.; Datta, A.; Daugherity, M. S.; David, G.; Denisov, A.; D'Enterria, D.; Deshpande, A.; Desmond, E. J.; Dharmawardane, K. V.; Dietzsch, O.; Ding, L.; Dion, A.; Donadelli, M.; Drapier, O.; Drees, A.; Drees, K. A.; Dubey, A. K.; Durham, J. M.; Durum, A.; Dutta, D.; Dzhordzhadze, V.; D'Orazio, L.; Edwards, S.; Efremenko, Y. V.; Ellinghaus, F.; Engelmore, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Eyser, K. O.; Fadem, B.; Fields, D. E.; Finger, M.; Finger, M.; Fleuret, F.; Fokin, S. L.; Fraenkel, Z.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fujiwara, K.; Fukao, Y.; Fusayasu, T.; Gainey, K.; Gal, C.; Garishvili, A.; Garishvili, I.; Glenn, A.; Gong, H.; Gong, X.; Gonin, M.; Gosset, J.; Goto, Y.; Granier de Cassagnac, R.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gunji, T.; Guo, L.; Gustafsson, H.-Å.; Hachiya, T.; Hadj Henni, A.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Han, R.; Hanks, J.; Hartouni, E. P.; Haruna, K.; Hashimoto, K.; Haslum, E.; Hayano, R.; He, X.; Heffner, M.; Hemmick, T. K.; Hester, T.; Hill, J. C.; Hohlmann, M.; Hollis, R. S.; Holzmann, W.; Homma, K.; Hong, B.; Horaguchi, T.; Hori, Y.; Hornback, D.; Huang, S.; Ichihara, T.; Ichimiya, R.; Iinuma, H.; Ikeda, Y.; Imai, K.; Imrek, J.; Inaba, M.; Iordanova, A.; Isenhower, D.; Ishihara, M.; Isobe, T.; Issah, M.; Isupov, A.; Ivanischev, D.; Ivanishchev, D.; Jacak, B. V.; Javani, M.; Jia, J.; Jiang, X.; Jin, J.; Johnson, B. M.; Joo, K. S.; Jouan, D.; Jumper, D. S.; Kajihara, F.; Kametani, S.; Kamihara, N.; Kamin, J.; Kaneti, S.; Kang, B. H.; Kang, J. H.; Kang, J. S.; Kapustinsky, J.; Karatsu, K.; Kasai, M.; Kawall, D.; Kazantsev, A. V.; Kempel, T.; Khanzadeev, A.; Kijima, K. M.; Kikuchi, J.; Kim, B. I.; Kim, C.; Kim, D. H.; Kim, D. J.; Kim, E.; Kim, E.-J.; Kim, H. J.; Kim, K.-B.; Kim, S. H.; Kim, Y.-J.; Kim, Y. K.; Kinney, E.; Kiriluk, K.; Kiss, Á.; Kistenev, E.; Klatsky, J.; Klay, J.; Klein-Boesing, C.; Kleinjan, D.; Kline, P.; Kochenda, L.; Komatsu, Y.; Komkov, B.; Konno, M.; Koster, J.; Kotchetkov, D.; Kotov, D.; Kozlov, A.; Král, A.; Kravitz, A.; Krizek, F.; Kunde, G. J.; Kurita, K.; Kurosawa, M.; Kweon, M. J.; Kwon, Y.; Kyle, G. S.; Lacey, R.; Lai, Y. S.; Lajoie, J. G.; Layton, D.; Lebedev, A.; Lee, B.; Lee, D. M.; Lee, J.; Lee, K. B.; Lee, K. S.; Lee, S. H.; Lee, S. R.; Lee, T.; Leitch, M. J.; Leite, M. A. L.; Leitgab, M.; Lenzi, B.; Lewis, B.; Li, X.; Liebing, P.; Lim, S. H.; Linden Levy, L. A.; Liška, T.; Litvinenko, A.; Liu, H.; Liu, M. X.; Love, B.; Lynch, D.; Maguire, C. F.; Makdisi, Y. I.; Makek, M.; Malakhov, A.; Malik, M. D.; Manion, A.; Manko, V. I.; Mannel, E.; Mao, Y.; Mašek, L.; Masui, H.; Masumoto, S.; Matathias, F.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Means, N.; Mendoza, M.; Meredith, B.; Miake, Y.; Mibe, T.; Mignerey, A. C.; Mikeš, P.; Miki, K.; Milov, A.; Mishra, D. K.; Mishra, M.; Mitchell, J. T.; Miyachi, Y.; Miyasaka, S.; Mohanty, A. K.; Moon, H. J.; Morino, Y.; Morreale, A.; Morrison, D. P.; Motschwiller, S.; Moukhanova, T. V.; Mukhopadhyay, D.; Murakami, T.; Murata, J.; Nagae, T.; Nagamiya, S.; Nagle, J. L.; Naglis, M.; Nagy, M. I.; Nakagawa, I.; Nakamiya, Y.; Nakamura, K. R.; Nakamura, T.; Nakano, K.; Nattrass, C.; Nederlof, A.; Newby, J.; Nguyen, M.; Nihashi, M.; Niida, T.; Nouicer, R.; Novitzky, N.; Nyanin, A. S.; O'Brien, E.; Oda, S. X.; Ogilvie, C. A.; Oka, M.; Okada, K.; Onuki, Y.; Oskarsson, A.; Ouchida, M.; Ozawa, K.; Pak, R.; Palounek, A. P. T.; Pantuev, V.; Papavassiliou, V.; Park, B. H.; Park, I. H.; Park, J.; Park, S. K.; Park, W. J.; Pate, S. F.; Patel, L.; Pei, H.; Peng, J.-C.; Pereira, H.; Peresedov, V.; Peressounko, D. Yu.; Petti, R.; Pinkenburg, C.; Pisani, R. P.; Proissl, M.; Purschke, M. L.; Purwar, A. K.; Qu, H.; Rak, J.; Rakotozafindrabe, A.; Ravinovich, I.; Read, K. F.; Rembeczki, S.; Reygers, K.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richardson, E.; Riveli, N.; Roach, D.; Roche, G.; Rolnick, S. D.; Rosati, M.; Rosendahl, S. S. E.; Rosnet, P.; Rukoyatkin, P.; Ružička, P.; Rykov, V. L.; Sahlmueller, B.; Saito, N.; Sakaguchi, T.; Sakai, S.; Sakashita, K.; Samsonov, V.; Sano, M.; Sarsour, M.; Sato, T.; Sawada, S.; Sedgwick, K.; Seele, J.; Seidl, R.; Semenov, A. Yu.; Semenov, V.; Sen, A.; Seto, R.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shoji, K.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Silvestre, C.; Sim, K. S.; Singh, B. K.; Singh, C. P.; Singh, V.; Slunečka, M.; Soldatov, A.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Soumya, M.; Sourikova, I. V.; Staley, F.; Stankus, P. W.; Stenlund, E.; Stepanov, M.; Ster, A.; Stoll, S. P.; Sugitate, T.; Suire, C.; Sukhanov, A.; Sun, J.; Sziklai, J.; Takagui, E. M.; Takahara, A.; Taketani, A.; Tanabe, R.; Tanaka, Y.; Taneja, S.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarján, P.; Tennant, E.; Themann, H.; Thomas, T. L.; Todoroki, T.; Togawa, M.; Toia, A.; Tomášek, L.; Tomášek, M.; Tomita, Y.; Torii, H.; Towell, R. S.; Tram, V.-N.; Tserruya, I.; Tsuchimoto, Y.; Tsuji, T.; Vale, C.; Valle, H.; van Hecke, H. W.; Vargyas, M.; Vazquez-Zambrano, E.; Veicht, A.; Velkovska, J.; Vértesi, R.; Vinogradov, A. A.; Virius, M.; Vossen, A.; Vrba, V.; Vznuzdaev, E.; Wang, X. R.; Watanabe, D.; Watanabe, K.; Watanabe, Y.; Watanabe, Y. S.; Wei, F.; Wei, R.; Wessels, J.; Whitaker, S.; White, S. N.; Winter, D.; Wolin, S.; Woody, C. L.; Wysocki, M.; Xie, W.; Yamaguchi, Y. L.; Yamaura, K.; Yang, R.; Yanovich, A.; Ying, J.; Yokkaichi, S.; You, Z.; Young, G. R.; Younus, I.; Yushmanov, I. E.; Zajc, W. A.; Zaudtke, O.; Zelenski, A.; Zhang, C.; Zhou, S.; Zolin, L.; Phenix Collaboration

    2015-02-01

    Measurements of bottomonium production in heavy-ion and p +p collisions at the Relativistic Heavy Ion Collider (RHIC) are presented. The inclusive yield of the three Υ states, Υ (1 S +2 S +3 S ) , was measured in the PHENIX experiment via electron-positron decay pairs at midrapidity for Au +Au and p +p collisions at √{sNN}=200 GeV. The Υ (1 S +2 S +3 S ) →e+e- differential cross section at midrapidity was found to be Beed σ /d y =108 ±38 (stat) ±15 (syst) ±11 (luminosity) pb in p +p collisions. The nuclear modification factor in the 30% most central Au +Au collisions indicates a suppression of the total Υ state yield relative to the extrapolation from p +p collision data. The suppression is consistent with measurements made by STAR at RHIC and at higher energies by the CMS experiment at the Large Hadron Collider.

  7. Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers

    NASA Astrophysics Data System (ADS)

    Chen, J. X.; Li, A. Z.; Chen, Y. Q.; Guo, F. M.; Lin, C.; Zhang, Y. G.; Qi, M.

    2001-07-01

    Lasers with emission wavelength of 1.8-2.1 μm offer many important applications to laser spectroscopy, eye-safe medical care and trace chemical detection. Strained InGaAs/InGaAsP structures on InP substrates have been reported as an alternative approach for the development of semiconductor laser diodes in the spectral range 1.8-2.1 μm due to the superior InP substrate quality and mature processing technology. In this paper we report the fabrication and performances of InGaAs/InGaAsP/InP strained quantum well lasers grown by gas source molecular beam epitaxy. The diodes show good I- V characteristics, and the typical turn-on voltage at room temperature is around 0.4-0.5 V. A threshold current of about 120 mA is achieved for a chip with 500 μm cavity length and 4.5 μm stripe width. The maximum output power with 10% duty cycle is 18 mW. The main peak of the laser spectrum is located at 1.84 μm.

  8. A STUDY OF THE η^'π^- SYSTEM PRODUCED IN THE REACTION π^-parrowη^'π^- p AT 18 GeV/c

    NASA Astrophysics Data System (ADS)

    Ivanov-Tatar, Emil

    2000-04-01

    The η^'π^- system has been studied in the reaction π^-parrowη^'π^- p at 18 GeV/c. The partial wave analysis of 6040 kinematically-identified events shows that the reaction is dominated by natural parity exchange. The production of an exotic isovector state π_1(1600) is observed in the I^G(J^PC) = 1^-(1^-+) wave. The mass and the width of that state are estimated via simultaneous mass-dependent fits of the I^G(J^PC) = 1^-(1^-+) and I^G(J^PC) = 1^-(2^++) waves. The a_2^-(1320) and a wide structure at 1.8 GeV/c^2 are observed in the I^G(J^PC) = 1^-(2^++) wave. The amplitude analysis of the mass interval above 1.8 GeV/c^2 indicates an interference between I^G(J^PC) = 1^-(2^++) and I^G(J^PC) = 1^-(4^++) waves.

  9. Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0 νββ decay searches of 76Ge

    NASA Astrophysics Data System (ADS)

    Bhike, Megha; Fallin, B.; Krishichayan; Tornow, W.

    2015-02-01

    The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ∼ 86%76Ge and ∼ 14%74Ge used in the 0 νββ searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the 3H (p , n)3He, 2H (d , n)3He and 3H (d , n)4He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution γ-ray spectroscopy was used to determine the γ-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the 74Ge (n , γ)75Ge reaction, the present data are about a factor of two larger than predicted. It was found that the 74Ge (n , γ)75Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the 76Ge (n , γ)77Ge yield due to the larger cross section of the former reaction.

  10. Target and beam-target spin asymmetries in exclusive pion electroproduction for Q2>1 GeV2 . I. e p →e π+n

    NASA Astrophysics Data System (ADS)

    Bosted, P. E.; Amaryan, M. J.; Anefalos Pereira, S.; Avakian, H.; Badui, R. A.; Ball, J.; Baltzell, N. A.; Battaglieri, M.; Batourine, V.; Bedlinskiy, I.; Biselli, A. S.; Briscoe, W. J.; Bültmann, S.; Burkert, V. D.; Carman, D. S.; Celentano, A.; Chandavar, S.; Charles, G.; Ciullo, G.; Clark, L.; Colaneri, L.; Cole, P. L.; Contalbrigo, M.; Crede, V.; D'Angelo, A.; De Vita, R.; Deur, A.; De Sanctis, E.; Djalali, C.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fanchini, E.; Fedotov, G.; Filippi, A.; Fleming, J. A.; Forest, T.; Fradi, A.; Gevorgyan, N.; Ghandilyan, Y.; Gilfoyle, G. P.; Girod, F. X.; Gleason, C.; Gohn, W.; Golovatch, E.; Gothe, R. W.; Griffioen, K. A.; Guidal, M.; Hakobyan, H.; Hattawy, M.; Hicks, K.; Holtrop, M.; Hughes, S. M.; Ilieva, Y.; Ireland, D. G.; Ishkhanov, B. S.; Isupov, E. L.; Jiang, H.; Jo, H. S.; Joo, K.; Joosten, S.; Khachatryan, G.; Khandaker, M.; Kim, A.; Kim, W.; Klein, F. J.; Koirala, S.; Kubarovsky, V.; Kuhn, S. E.; Lanza, L.; Net, L. A.; Lenisa, P.; Livingston, K.; MacGregor, I. J. D.; McCracken, M. E.; McKinnon, B.; Meyer, C. A.; Mirazita, M.; Mokeev, V. I.; Montgomery, R. A.; Munevar, E.; Munoz Camacho, C.; Murdoch, G.; Nadel-Turonski, P.; Niccolai, S.; Osipenko, M.; Ostrovidov, A. I.; Park, K.; Pasyuk, E.; Peng, P.; Phelps, W.; Pisano, S.; Pogorelko, O.; Price, J. W.; Prok, Y.; Protopopescu, D.; Puckett, A. J. R.; Raue, B. A.; Ripani, M.; Rosner, G.; Rossi, P.; Schumacher, R. A.; Seder, E.; Skorodumina, Iu.; Smith, G. D.; Sokhan, D.; Sparveris, N.; Stankovic, I.; Stepanyan, S.; Strakovsky, I. I.; Strauch, S.; Taiuti, M.; Tian, Ye; Torayev, B.; Ungaro, M.; Voskanyan, H.; Voutier, E.; Walford, N. K.; Wei, X.; Weinstein, L. B.; Zachariou, N.; Zhang, J.; Zhao, Z. W.; Zonta, I.; CLAS Collaboration

    2017-03-01

    Beam-target double-spin asymmetries and target single-spin asymmetries were measured for the exclusive π+ electroproduction reaction γ*p →n π+ . The results were obtained from scattering of 6-GeV longitudinally polarized electrons off longitudinally polarized protons using the CEBAF Large Acceptance Spectrometer at Jefferson Laboratory. The kinematic range covered is 1.1 GeV and 1 GeV2 . Results were obtained for about 6000 bins in W , Q2, cos(θ*) , and ϕ*. Except at forward angles, very large target-spin asymmetries are observed over the entire W region. Reasonable agreement is found with phenomenological fits to previous data for W <1.6 GeV, but very large differences are seen at higher values of W . A generalized parton distributions (GPD)-based model is in poor agreement with the data. When combined with cross-sectional measurements, the present results provide powerful constraints on nucleon resonance amplitudes at moderate and large values of Q2, for resonances with masses as high as 2.4 GeV.

  11. Target and beam-target spin asymmetries in exclusive pion electroproduction for Q 2 > 1 GeV 2 . I. e p → e π + n

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bosted, P. E.; Amaryan, M. J.; Anefalos Pereira, S.

    2017-03-20

    Beam-target double-spin asymmetries and target single-spin asymmetries were measured for the exclusive π+ electroproduction reaction γ*p → nπ +. The results were obtained from scattering of 6-GeV longitudinally polarized electrons off longitudinally polarized protons using the CEBAF Large Acceptance Spectrometer at Jefferson Laboratory. The kinematic range covered is 1.1 < W < 3 GeV and 1 < Q 2 < 6GeV 2. Results were obtained for about 6000 bins in W, Q 2, cos(θ*), and Φ*. Except at forward angles, very large target-spin asymmetries are observed over the entire W region. Reasonable agreement is found with phenomenological fits to previousmore » data for W < 1.6 GeV, but very large differences are seen at higher values of W. Finally, a generalized parton distributions (GPD)-based model is in poor agreement with the data. When combined with cross-sectional measurements, the present results provide powerful constraints on nucleon resonance amplitudes at moderate and large values of Q 2, for resonances with masses as high as 2.4 GeV.« less

  12. geant4 hadronic cascade models analysis of proton and charged pion transverse momentum spectra from p + Cu and Pb collisions at 3, 8, and 15 GeV/c

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Abdel-Waged, Khaled; Benha University, Faculty of Science, Physics Department; Felemban, Nuha

    2011-07-15

    We describe how various hadronic cascade models, which are implemented in the geant4 toolkit, describe proton and charged pion transverse momentum spectra from p + Cu and Pb collisions at 3, 8, and 15 GeV/c, recently measured in the hadron production (HARP) experiment at CERN. The Binary, ultrarelativistic quantum molecular dynamics (UrQMD) and modified FRITIOF (FTF) hadronic cascade models are chosen for investigation. The first two models are based on limited (Binary) and branched (UrQMD) binary scattering between cascade particles which can be either a baryon or meson, in the three-dimensional space of the nucleus, while the latter (FTF) considersmore » collective interactions between nucleons only, on the plane of impact parameter. It is found that the slow (p{sub T}{<=}0.3 GeV/c) proton spectra are quite sensitive to the different treatments of cascade pictures, while the fast (p{sub T}>0.3 GeV/c) proton spectra are not strongly affected by the differences between the FTF and UrQMD models. It is also shown that the UrQMD and FTF combined with Binary (FTFB) models could reproduce both proton and charged pion spectra from p + Cu and Pb collisions at 3, 8, and 15 GeV/c with the same accuracy.« less

  13. Optical gain for the interband optical transition in InAsP/InP quantum well wire in the influence of laser field intensity

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Saravanan, S.; Peter, A. John, E-mail: a.john.peter@gmail.com

    Intense high frequency laser field induced electronic and optical properties of heavy hole exciton in the InAs{sub 0.8}P{sub 0.2}/InP quantum wire is studied taking into account the geometrical confinement effect. Laser field related exciton binding energies and the optical band gap in the InAs{sub 0.8}P{sub 0.2}/InP quantum well wire are investigated. The optical gain, for the interband optical transition, as a function of photon energy, in the InAs{sub 0.8}P{sub 0.2}/InP quantum wire, is obtained in the presence of intense laser field. The compact density matrix method is employed to obtain the optical gain. The obtained optical gain in group III-Vmore » narrow quantum wire can be applied for achieving the preferred telecommunication wavelength.« less

  14. Der Organismus der Mathematik - mikro-, makro- und mesoskopisch betrachtet

    NASA Astrophysics Data System (ADS)

    Winkler, Reinhard

    Meist enden ähnliche Gespräche über Mathematik etwa an diesem Punkt, ohne dass der Nichtmathematiker von der Sinnhaftigkeit mathematischer Forschung, ja mathematischer Tätigkeit generell überzeugt werden konnte. Ich glaube nicht, dass dem Laien Blindheit für die Großartigkeit unserer Wissenschaft vorzuwerfen ist, wenn hier keine befriedigendere Kommunikation zustande kommt. Ich sehe als Ursache eher ein stark verkürztes Bild von der Mathematik, welches auch Fachleute oft zeichnen, weil ihnen eine angemessenere Darstellung ihres Faches zu viel Mühe macht - und das obwohl Mathematik nur betreiben kann, wer geistige Mühen sonst keineswegs scheut. Ich will versuchen, den Ursachen dieses eigentümlichen Phänomens auf den Grund zu gehen.

  15. Sterblichkeit: der paradoxe Kunstgriff des Lebens - Eine Betrachtung vor dem Hintergrund der modernen Biologie

    NASA Astrophysics Data System (ADS)

    Verbeek, Bernhard

    Leben gibt es auf der Erde seit fast 4 Mio. Jahren, trotz allen Katastrophen. Die Idee des Lebens scheint unsterblich. Der Tod aber offenbar auch. Jedes Lebewesen ist davon bedroht, ja für Menschen und andere "höhere“ Lebewesen ist er im Lebensprogramm eingebaut - todsicher. Diese Tatsache ist alles andere als selbstverständlich. Ist sie überhaupt kompatibel mit dem Prinzip der Evolution, nach dem der am besten Angepasste überlebt?

  16. Ustekinumab in der Therapie der Pustulosis palmoplantaris - Eine Fallserie mit neun Patienten.

    PubMed

    Buder, Valeska; Herberger, Katharina; Jacobi, Arnd; Augustin, Matthias; Radtke, Marc Alexander

    2016-11-01

    Die Pustulosis palmoplantaris ist eine chronisch entzündliche Hauterkrankung, die mit bedeutenden Einschränkungen der Lebensqualität und der Belastbarkeit einhergeht. Aufgrund von Zulassungsbeschränkungen und einem häufig therapierefraktären Verlauf sind die Behandlungsmöglichkeiten limitiert. Nach zuvor frustranen Therapien erhielten 9 Patienten mit Pustulosis palmoplantaris nach Ausschluss einer latenten Tuberkulose Ustekinumab (45 mg Ustekinumab bei < 100 kg Körpergewicht [KG], 90 mg Ustekinumab > 100 kg KG) in Woche 0, 4, 12 und 24. Reguläre Visiten erfolgten nach 4 und 12 Wochen, im weiteren Verlauf alle 12 Wochen. Das Durchschnittsalter bei Therapiebeginn betrug 48 Jahre. Drei Patienten waren männlich. Bei n  =  4 Patienten (44,4 %) wurde eine Verbesserung um 75 % des Palmoplantar-Psoriasis-Area-Severity-Index (PPPASI) erreicht. Insgesamt verbesserte sich der PPPASI nach 24 Wochen durchschnittlich um 71,6 %. Eine komplette Abheilung zeigte sich bei n  =  2 Patienten nach 24 Wochen. Bis auf lokale Injektionsreaktionen und leichte Infekte wurden keine unerwünschten Wirkungen beobachtet. Die Fallserie ist ein weiterer Beleg für die Wirksamkeit und Verträglichkeit von Ustekinumab in der Therapie der Pustulosis palmoplantaris. Zur Beurteilung der Langzeitwirkung und -sicherheit sowie der Wirksamkeit einer intermittierenden Therapie sind kontrollierte Studiendaten sowie Beobachtungen im Rahmen von Patientenregistern notwendig. © 2016 Deutsche Dermatologische Gesellschaft (DDG). Published by John Wiley & Sons Ltd.

  17. Powder metallurgy of Ge, Si, and Ge-Si

    NASA Astrophysics Data System (ADS)

    Schilz, Jürgen; Langenbach, Marion

    1993-03-01

    id="ab1"Planetary ball-milling and pressing behaviour of Ge, Si and Ge-Si powder mixtures are investigated. Scanning and transmission electron microscopy observations revealed the different microstructure of the two elements after milling: Ge remains in a microcrystalline state, whereas Si can be comminuted into grains consisting of nanocrystalline regions. Planetary milling of the two elements together, using agate balls and vial, did not reveal any compound formation. By hot-isostatic pressing, pure Ge and Ge-Si mixtures were densified to a higher value than pure Si. This denotes a plastic flow of the Ge component at a process temperature of 800°C. The microhardness of hot-pressed Ge reaches the bulk value; hot-pressed Si is very soft. Energy dispersive X-ray analysis and X-ray diffraction did not detect any impurity contamination from vial and milling media wear. Moreover, by electrical transport measurements it turned out that the net carrier concentration density resulting from electrical active impurities introduced by the milling and pressing process is below 2 x 1016 cm 3 at room temperature.

  18. Synthesis and properties of Rb2GeF6:Mn4+ red-emitting phosphors

    NASA Astrophysics Data System (ADS)

    Sakurai, Shono; Nakamura, Toshihiro; Adachi, Sadao

    2018-02-01

    Rb2GeF6:Mn4+ red-emitting phosphors were synthesized by coprecipitation and their structural and optical properties were investigated by laser microscopy observation, X-ray diffraction (XRD) analysis, photoluminescence (PL) analysis, PL excitation (PLE) spectroscopy, and PL decay measurement. Single-crystalline ingots in the form of a hexagonal pyramid were prepared with a basal plane diameter of ˜2 mm. The XRD analysis suggested that Rb2GeF6 crystallizes in the hexagonal structure (C6v4 = P63mc) with a = 0.5955 nm and c = 0.9672 nm. The phosphor exhibited the strong Mn4+-related zero-phonon line (ZPL) emission peak typically observed in host crystals with piezoelectrically active lattices such as a hexagonal lattice. The quantum efficiencies of the bulk ingot and powdered samples were 87 and 74%, respectively, with nearly the same luminescence decay time of ˜6 ms. The exact ZPL energies and related crystal-field and Racah parameters were obtained from the PL and PLE spectra by Franck-Condon analysis. Temperature-dependent PL intensities were analyzed from T = 20 to 500 K using a thermal quenching model by considering Bose-Einstein phonon statistics. A comparative discussion on the phosphor properties of Rb2GeF6:Mn4+ and Rb2MF6:Mn4+ with M = Si and Ti was also given.

  19. Vibrational spectroscopic study of pH dependent solvation at a Ge(100)-water interface during an electrode potential triggered surface termination transition

    NASA Astrophysics Data System (ADS)

    Niu, Fang; Rabe, Martin; Nayak, Simantini; Erbe, Andreas

    2018-06-01

    The charge-dependent structure of interfacial water at the n-Ge(100)-aqueous perchlorate interface was studied by controlling the electrode potential. Specifically, a joint attenuated total reflection infrared spectroscopy and electrochemical experiment was used in 0.1M NaClO4 at pH ≈ 1-10. The germanium surface transformation to an H-terminated surface followed the thermodynamic Nernstian pH dependence and was observed throughout the entire pH range. A singular value decomposition-based spectra deconvolution technique coupled to a sigmoidal transition model for the potential dependence of the main components in the spectra shows the surface transformation to be a two-stage process. The first stage was observed together with the first appearance of Ge-H stretching modes in the spectra and is attributed to the formation of a mixed surface termination. This transition was reversible. The second stage occurs at potentials ≈0.1-0.3 V negative of the first one, shows a hysteresis in potential, and is attributed to the formation of a surface with maximum Ge-H coverage. During the surface transformation, the surface becomes hydrophobic, and an effective desolvation layer, a "hydrophobic gap," developed with a thickness ≈1-3 Å. The largest thickness was observed near neutral pH. Interfacial water IR spectra show a loss of strongly hydrogen-bound water molecules compared to bulk water after the surface transformation, and the appearance of "free," non-hydrogen bound OH groups, throughout the entire pH range. Near neutral pH at negative electrode potentials, large changes at wavenumbers below 1000 cm-1 were observed. Librational modes of water contribute to the observed changes, indicating large changes in the water structure.

  20. Measurement of the cross section and longitudinal double-spin asymmetry for dijet production in polarized p p collisions at √{s }=200 GeV

    NASA Astrophysics Data System (ADS)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Ajitanand, N. N.; Alekseev, I.; Anderson, D. M.; Aoyama, R.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Ashraf, M. U.; Attri, A.; Averichev, G. S.; Bai, X.; Bairathi, V.; Barish, K.; Behera, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandenburg, J. D.; Brandin, A. V.; Brown, D.; Bunzarov, I.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chankova-Bunzarova, N.; Chatterjee, A.; Chattopadhyay, S.; Chen, X.; Chen, X.; Chen, J. H.; Cheng, J.; Cherney, M.; Christie, W.; Contin, G.; Crawford, H. J.; Das, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Elsey, N.; Engelage, J.; Eppley, G.; Esha, R.; Esumi, S.; Evdokimov, O.; Ewigleben, J.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Federicova, P.; Fedorisin, J.; Feng, Z.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Fujita, J.; Fulek, L.; Gagliardi, C. A.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, S.; Gupta, A.; Guryn, W.; Hamad, A. I.; Hamed, A.; Harlenderova, A.; Harris, J. W.; He, L.; Heppelmann, S.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Horvat, S.; Huang, T.; Huang, B.; Huang, H. Z.; Huang, X.; Humanic, T. J.; Huo, P.; Igo, G.; Jacobs, W. W.; Jentsch, A.; Jia, J.; Jiang, K.; Jowzaee, S.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kapukchyan, D.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z.; Kikoła, D. P.; Kim, C.; Kisel, I.; Kisiel, A.; Kochenda, L.; Kocmanek, M.; Kollegger, T.; Kosarzewski, L. K.; Kraishan, A. F.; Krauth, L.; Kravtsov, P.; Krueger, K.; Kulathunga, N.; Kumar, L.; Kvapil, J.; Kwasizur, J. H.; Lacey, R.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, W.; Li, C.; Li, Y.; Li, X.; Lidrych, J.; Lin, T.; Lisa, M. A.; Liu, H.; Liu, F.; Liu, Y.; Liu, P.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Luo, S.; Ma, R.; Ma, G. L.; Ma, L.; Ma, Y. G.; Magdy, N.; Majka, R.; Mallick, D.; Margetis, S.; Markert, C.; Matis, H. S.; Meehan, K.; Mei, J. C.; Miller, Z. W.; Minaev, N. G.; Mioduszewski, S.; Mishra, D.; Mizuno, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nie, M.; Nigmatkulov, G.; Niida, T.; Nogach, L. V.; Nonaka, T.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V. A.; Olvitt, D.; Page, B. S.; Pak, R.; Pandit, Y.; Panebratsev, Y.; Pawlik, B.; Pei, H.; Perkins, C.; Pile, P.; Pluta, J.; Poniatowska, K.; Porter, J.; Posik, M.; Pruthi, N. K.; Przybycien, M.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Ray, R. L.; Reed, R.; Rehbein, M. J.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roth, J. D.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Salur, S.; Sandweiss, J.; Saur, M.; Schambach, J.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Schweid, B. R.; Seger, J.; Sergeeva, M.; Seto, R.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, A.; Sharma, M. K.; Shen, W. Q.; Shi, S. S.; Shi, Z.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Singha, S.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Solyst, W.; Song, L.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Strikhanov, M.; Stringfellow, B.; Sugiura, T.; Sumbera, M.; Summa, B.; Sun, X.; Sun, X. M.; Sun, Y.; Surrow, B.; Svirida, D. N.; Tang, A. H.; Tang, Z.; Taranenko, A.; Tarnowsky, T.; Tawfik, A.; Thäder, J.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Todoroki, T.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Trzeciak, B. A.; Tsai, O. D.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vasiliev, A. N.; Videbæk, F.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, G.; Wang, Y.; Wang, F.; Wang, Y.; Webb, G.; Webb, J. C.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y.; Xiao, Z. G.; Xie, W.; Xie, G.; Xu, Y. F.; Xu, Q. H.; Xu, N.; Xu, Z.; Xu, J.; Yang, Y.; Yang, S.; Yang, C.; Yang, Q.; Ye, Z.; Ye, Z.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zbroszczyk, H.; Zha, W.; Zhang, S.; Zhang, J. B.; Zhang, Y.; Zhang, J.; Zhang, J.; Zhang, S.; Zhang, X. P.; Zhang, Z.; Zhao, J.; Zhong, C.; Zhou, C.; Zhou, L.; Zhu, Z.; Zhu, X.; Zyzak, M.; STAR Collaboration

    2017-04-01

    We report the first measurement of the longitudinal double-spin asymmetry AL L for midrapidity dijet production in polarized p p collisions at a center-of-mass energy of √{s }=200 GeV . The dijet cross section was measured and is shown to be consistent with next-to-leading order (NLO) perturbative QCD predictions. AL L results are presented for two distinct topologies, defined by the jet pseudorapidities, and are compared to predictions from several recent NLO global analyses. The measured asymmetries, the first such correlation measurements, support those analyses that find positive gluon polarization at the level of roughly 0.2 over the region of Bjorken-x >0.05 .

  1. Crystallization kinetics of the phase change material GeSb 6Te measured with dynamic transmission electron microscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Winseck, M. M.; Cheng, H. -Y.; Campbell, G. H.

    2016-03-30

    GeSb 6Te is a chalcogenide-based phase change material that has shown great ptoential for use in solid-state memory devices. The crystallization kinetics of amorphous thin films of GeSb 6Te during laser crystallization were followed with dynamic transmission electron microscopy, a photo-emission electron microscopy technique with nanosecond-scale time resolution. Nine-frame movies of crystal growth were taken during laser crystallization. The nucleation rate is observed to be very low and the growth rates are very high, up to 10.8 m s –1 for amorphous as-deposited films and significantly higher for an amorphous film subject to sub-threshold laser annealing before crystallization. The measuredmore » growth rates exceed any directly measured growth rate of a phase change material. Here, the crystallization is reminiscent of explosive crystallization of elemental semiconductors both in the magnitude of the growth rate and in the resulting crystalline microstructures.« less

  2. Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

    PubMed

    Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

    2017-01-18

    Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

  3. Medizintechnik in der Tumororthopädie

    NASA Astrophysics Data System (ADS)

    Burgkart, Rainer; Gollwitzer, Hans; Holzapfel, Boris; Rudert, Maximilian; Rechl, Hans; Gradinger, Reiner

    Die Behandlung der Knochentumoren unterlag in den letzten 20 Jahren einem raschen und stetigen Wandel, was zum einen auf die verbesserten Therapieerfolge durch den Einsatz von neoadjuvanten Therapieformen zurückzuführen ist, und andererseits von medizintechnischen Entwicklungen bezüglich moderner Schnittbilddiagnostik, neuer 3D Operationsplanungsverfahren wie das Rapid Prototyping und adaptiv modularer Tumorendoprothesensystemen u. a. begleitet wurde. Gerade die technischen Entwicklungen haben dazu geführt, daß im Bereich der Extremitäten und der Wirbelsäule radikalere Eingriffe durchgeführt werden können, was die lokale Tumorkontrolle wesentlich verbessert hat. In zunehmenden Maße werden deshalb nicht nur Kurzzeiterfolge sondern auch mittel- und langfristige Fortschritte bei der Behandlung der malignen Knochentumoren einschließlich der Metastasenbehandlung erreicht. Grundlage der Therapie ist dabei immer primär die Sicherung der Diagnose mittels Biopsie und die bildgebende sowie histologische Stadieneinteilung des malignen Tumors. Nach der Tumorresektion kann die Rekonstruktion biologisch oder mit Endoprothesensystemen erfolgen. Gerade die weiterentwickelten modularen Systeme führen zu guten funktionellen Ergebnissen mit langen Standzeiten und einer reduzierten Komplikationsrate. Individuell angefertigte Implantate sind vor allem im Bereich der Rekonstruktion komplexer Beckentumoren von großer klinischer Bedeutung.

  4. Schemes for efficient QW pumping of AlGaInP disk lasers

    NASA Astrophysics Data System (ADS)

    Brauch, Uwe; Mateo, Cherry May N.; Kahle, Hermann; Bek, Roman; Jetter, Michael; Abdou Ahmed, Marwan; Michler, Peter; Graf, Thomas

    2017-02-01

    Keys to high-power operation of disk lasers are a thin active layer, a small Stokes shift and an efficient cooling, best realized with a limited number of QWs which are pumped close to the laser wavelength and which are in close contact with one or two diamond heat sinks. To get sufficient pump absorption many passes of the pump radiation are needed. This can be realized either by taking advantage of intrinsic resonances (designed for the pump radiation) or by an external multi-pass optics (known from Yb disk lasers) or a combination of both. The various options will be discussed and some results for AlGaInP disk lasers will be presented.

  5. Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Siggelkow, Lisa; Hlukhyy, Viktor; Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de

    2012-07-15

    The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64more » variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge

  6. Characteristics of hardron-nucleus interactions at 100 GeV/c

    NASA Astrophysics Data System (ADS)

    Toothacker, W. S.; Whitmore, J.; Elcombe, P. A.; Hill, J. C.; Neale, W. W.; Kowald, W.; Walker, W. D.; Lucas, P.; Voyvodic, L.; Ammar, R.; Coppage, D.; Davis, R.; Gress, J.; Kanekal, S.; Kwak, N.; Bishop, J. M.; Biswas, N. N.; Cason, N. M.; Kenney, V. P.; Mattingly, M. C. K.; Ruchti, R. C.; Shepard, W. D.; Ting, S. J. Y.

    1988-11-01

    We report on 100 GeV/c interactions of p and p¯ with Ag and Au targets. This is a subset of the data from Fermilab experiment E597 and was performed with the 30-inch bubble chamber and Downstream Particle Identifier. Final state protons with laboratory momentum less than 1.4 GeV/c have been identified by their ionization in the bubble chamber. Final state protons/antiprotons with laboratory momentum greater than 10 GeV/c have been identified using CRISIS, an ionization sampling drift chamber. The cross section and mean transverse momentum squared of the leading baryon from the reactions p+(Ag,Au)→p+X and p¯+(Ag,Au)→p¯+X are presented as a function of the rapidity loss of the leading baryon. The laboratory rapidity and transverse momentum squared of the associated pions are also presented.

  7. Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

    NASA Astrophysics Data System (ADS)

    Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

    2018-05-01

    We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

  8. Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices.

    PubMed

    Liao, P H; Peng, K P; Lin, H C; George, T; Li, P W

    2018-05-18

    We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO 2 /SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5-95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5-4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si 1-x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si 1-x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core 'building block' required for the fabrication of Ge-based MOS devices.

  9. Ge-cap quantum-well bulk FinFET for 5 nm node CMOS integration

    NASA Astrophysics Data System (ADS)

    Dwi Kurniawan, Erry; Peng, Kang-Hui; Yang, Shang-Yi; Yang, Yi-Yun; Thirunavukkarasu, Vasanthan; Lin, Yu-Hsien; Wu, Yung-Chun

    2018-04-01

    We propose the use of Ge-cap quantum-well (QW) bulk FinFET for 5 nm CMOS integration, which is a Si channel wrapped with Ge around three sides of the fin channel. The simulation results show that the Ge-cap FinFET structure demonstrates better performance than pure Si, pure Ge, and Si-cap FinFET structures. By optimizing Si fin width and Ge-cap thickness, the on-state current of nFET and pFET can also be symmetric without changing the total fin width (F Wp = F Wn). The electrons in Ge-cap nFinFET concentrate in the Si channel because of QWs formed in the lowest conduction band of the Ge and Si heterostructure, while the holes in Ge-cap pFinFET prefer to stay in Ge surfaces owing to QWs formed in the Ge valence band. The physics studies of this device have made the design rules relevant for the application of the CMOS inverter and static random access memory (SRAM) application technology.

  10. Effects of Ge-132 and GeO2 on seed germination and seedling growth of Oenothera biennis L. under NaCl stress.

    PubMed

    Liu, Yan; Hou, Long-Yu; Li, Qing-Mei; Jiang, Ze-Ping; Gao, Wei-Dong; Zhu, Yan; Zhang, Hai-Bo

    2017-01-01

    To investigate the effects of β-carboxyethyl germanium sequioxide (Ge-132) and germanium dioxide (GeO 2 ) on improving salt tolerance of evening primrose (Oenothera biennis L.), seed germination, seedling growth, antioxidase and malondialdehyde (MDA) were observed under treatments of various concentrations (0, 5, 10, 20, 30 μM) of Ge in normal condition and in 50 mM NaCl solution. The results showed that both Ge-132 and GeO 2 treatments significantly increased seed germination percentage and shoot length in dose-dependent concentrations but inhibited early root elongation growth. 5-30 μM Ge-132 and 10, 20 μM GeO 2 treatments could significantly mitigate even eliminate harmful influence of salt, representing increased percentage of seed germination, root length, ratio between length of root and shoot, and decreased shoot length. These treatments also significantly decreased peroxidase (POD) and catalase (CAT) activities and MDA content. The mechanism is likely that Ge scavenges reactive oxygen species - especially hydrogen peroxide (H 2 O 2 ) - by its electron configuration 4S 2 4P 2 so as to reduce lipid peroxidation. This is the first report about the comparison of bioactivity effect of Ge-132 and GeO 2 on seed germination and seedling growth under salt stress. We conclude that Ge-132 is better than GeO 2 on promoting salt tolerance of seed and seedling.

  11. Ex situ n+ doping of GeSn alloys via non-equilibrium processing

    NASA Astrophysics Data System (ADS)

    Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

    2018-06-01

    Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

  12. Critical thickness for strain relaxation of Ge{sub 1−x}Sn{sub x} (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, Wei; Zhou, Qian; Dong, Yuan

    We investigated the critical thickness (h{sub c}) for plastic relaxation of Ge{sub 1−x}Sn{sub x} grown by molecular beam epitaxy. Ge{sub 1−x}Sn{sub x} films with various Sn mole fraction x (x ≤ 0.17) and different thicknesses were grown on Ge(001). The strain relaxation of Ge{sub 1−x}Sn{sub x} films and the h{sub c} were investigated by high-resolution x-ray diffraction and reciprocal space mapping. It demonstrates that the measured h{sub c} values of Ge{sub 1−x}Sn{sub x} layers are as much as an order of magnitude larger than that predicted by the Matthews and Blakeslee (M-B) model. The People and Bean (P-B) model was also usedmore » to predict the h{sub c} values in Ge{sub 1−x}Sn{sub x}/Ge system. The measured h{sub c} values for various Sn content follow the trend, but slightly larger than that predicted by the P-B model.« less

  13. (012)-cut chalcopyrite ZnGeP2 as a high-bandwidth terahertz electro-optic detection crystal

    NASA Astrophysics Data System (ADS)

    Carnio, B. N.; Greig, S. R.; Firby, C. J.; Zawilski, K. T.; Schunemann, P. G.; Elezzabi, A. Y.

    2017-02-01

    The detection properties of a chalcopyrite zinc germanium diphosphide (ZnGeP2, ZGP) electro-optic (EO) crystal, having thickness of 1080 μm and cut along the <012> plane, is studied in the terahertz (THz) frequency range. Outstanding phase matching is achieved between the optical probe pulse and the THz frequency components, leading to a large EO detection bandwidth. ZGP has the ability to measure frequencies that are 1.3 and 1.2 times greater than that of ZnTe for crystal thicknesses of 1080 and 500 μm, respectively. Furthermore, the ZGP crystal is able to detect frequency components that are >=4.6 times larger than both ZnSe and GaP (for crystal thicknesses of 1080 μm) and >=2.2 times larger than ZnSe and GaP (for crystal thicknesses of 500 μm).

  14. elecTUM: Umsetzung der eLearning-Strategie der Technischen Universität München

    NASA Astrophysics Data System (ADS)

    Rathmayer, Sabine; Gergintchev, Ivan

    An der TUM wurde ein umfassendes und integriertes eLearning-Konzept umgesetzt, welches Präsenzstudium und eLearning in allen Leistungsbereichen der Universität miteinander verzahnt. Ein besonderer Schwerpunkt lag dabei in der Schaffung einer effizienten und wettbewerbsfähigen integrierten eLearning Infrastruktur in Hinblick auf die noch weiter steigenden Studienanfängerzahlen ab dem Jahr 2011 sowie die Umsetzung von eBologna. Die Etablierung einer hochschulweiten Lernplattform stellte eine wesentliche Basis für die Umsetzung der eLearning-Strategie dar. Die wissenschaftliche und wirtschaftliche Anschlussfähigkeit im Hinblick auf eine Verwertung der Projektergebnisse wurde durch die aktive Beteiligung an einer Vielzahl hochschulübergreifender Arbeitskreise, Fachtagungen und Kooperationen, vor allem über Organisations- und Dienstleistungsmodelle sowie innovative technische Entwicklungen, sichergestellt.

  15. Bereits nach Ablauf der Halbwertszeit droht der vollständige Zerfall Die britische Atomic Scientists’ Association, die Ideologie der „objektiven” Wissenschaft und die H-Bombe

    NASA Astrophysics Data System (ADS)

    Laucht, Christoph

    Präsident Harry Trumans Verlautbarung vom 31.1.1950, seine Regierung wolle die Entwicklung der Wasserstoffbombe vorantreiben, fand große Beachtung in den britischen Medien. Die illustrierte Zeitschrift Picture Post widmete der HBombe einen Artikel, der unter anderem kurze Stellungnahmen der britischen Atomwissenschaftler Eric Burhop, Kathleen Lonsdale, Harrie Massey, Rudolf Peierls und Maurice Pryce enthielt, die alle Mitglieder der Atomic Scientists' Association (ASA) waren.

  16. Measurement of Υ(1S + 2S +3S) production in p + p and Au + Au collisions at \\(\\sqrt{s_{\\mathrm{NN}}}=200\\) GeV

    DOE PAGES

    Adare, A.; Afanasiev, S.; Aidala, C.; ...

    2015-02-24

    Measurements of bottomonium production in heavy-ion and p+p collisions at the Relativistic Heavy Ion Collider (RHIC) are presented. The inclusive yield of the three Υ states, Υ(1S + 2S + 3S), was measured in the PHENIX experiment via electron-positron decay pairs at midrapidity for Au+Au and p+p collisions at \\(\\sqrt{s_{\\mathrm{NN}}}=200\\) GeV. The Υ(1S + 2S + 3S) → e⁺e⁻ differential cross section at midrapidity was found to be B eedσ/dy = 108 ± 38 (stat) ± 15 (syst) ± 11 (luminosity) pb in p+p collisions. The nuclear modification factor in the 30% most central Au+Au collisions indicates a suppression ofmore » the total Υ state yield relative to the extrapolation from p+p collision data. Thus, the suppression is consistent with measurements at higher energies by the CMS experiment at the Large Hadron Collider.« less

  17. Evaluation of GeO desorption behavior in the metalGeO(2)Ge structure and its improvement of the electrical characteristics.

    PubMed

    Oniki, Yusuke; Koumo, Hideo; Iwazaki, Yoshitaka; Ueno, Tomo

    2010-06-15

    The relation between germanium monoxide (GeO) desorption and either improvement or deterioration in electrical characteristics of metalGeO(2)Ge capacitors fabricated by thermal oxidation has been investigated. In the metalGeO(2)Ge stack, two processes of GeO desorption at different sites and at different temperatures were observed by thermal desorption spectroscopy measurements. The electrical characteristics of as-oxidized metalGeO(2)Ge capacitors shows a large flat-band voltage shift and minority carrier generation due to the GeO desorption from the GeO(2)Ge interface during oxidation of Ge substrates. On the other hand, the electrical properties were drastically improved by a postmetallization annealing at low temperature resulting in a metal catalyzed GeO desorption from the top interface.

  18. Investigation of the reaction 74Ge(p,γ)75As using the in-beam method to improve reaction network predictions for p nuclei

    NASA Astrophysics Data System (ADS)

    Sauerwein, A.; Endres, J.; Netterdon, L.; Zilges, A.; Foteinou, V.; Provatas, G.; Konstantinopoulos, T.; Axiotis, M.; Ashley, S. F.; Harissopulos, S.; Rauscher, T.

    2012-09-01

    Background: Astrophysical models studying the origin of the neutron-deficient p nuclides require knowledge of proton capture cross sections at low energy. The production site of the p nuclei is still under discussion but a firm basis of nuclear reaction rates is required to address the astrophysical uncertainties. Data at astrophysically relevant interaction energies are scarce. Problems with the prediction of charged particle capture cross sections at low energy were found in the comparisons between previous data and calculations in the Hauser-Feshbach statistical model of compound reactions.Purpose: A measurement of 74Ge(p,γ)75As at low proton energies, inside the astrophysically relevant energy region, is important in several respects. The reaction is directly important because it is a bottleneck in the reaction flow which produces the lightest p nucleus 74Se. It is also an important addition to the data set required to test reaction-rate predictions and to allow an improvement in the global p+nucleus optical potential required in such calculations.Method: An in-beam experiment was performed, making it possible to measure in the range 2.1≤Ep≤3.7MeV, which is for the most part inside the astrophysically relevant energy window. Angular distributions of the γ-ray transitions were measured with high-purity germanium detectors at eight angles relative to the beam axis. In addition to the total cross sections, partial cross sections for the direct population of 12 levels were determined.Results: The resulting cross sections were compared to Hauser-Feshbach calculations using the code smaragd. Only a constant renormalization factor of the calculated proton widths allowed a good reproduction of both total and partial cross sections. The accuracy of the calculation made it possible to check the spin assignment of some states in 75As. In the case of the 1075-keV state, a double state with spins and parities of 3/2- and 5/2- is needed to explain the experimental

  19. SiGe nano-heteroepitaxy on Si and SiGe nano-pillars.

    PubMed

    Mastari, M; Charles, M; Bogumilowicz, Y; Thai, Q M; Pimenta-Barros, P; Argoud, M; Papon, A M; Gergaud, P; Landru, D; Kim, Y; Hartmann, J M

    2018-07-06

    In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterised by atomic force microscopy, x-ray diffraction and transmission electron microscopy. Smooth SiGe surfaces and full strain relaxation were obtained in the 650 °C-700 °C range for 2D SiGe layers grown either on Si or SiGe nano-pillars.

  20. InGaAsP/InP laser development for single-mode, high-data-rate communications

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Levin, E. R.; Magee, C. W.; Smith, R. T.

    1981-01-01

    Materials studies as well as general and specific device development were carried out in the InGaAsP system. A comparison was made of three standard methods of evaluating substrate quality by means of dislocation studies. A cause of reduced yield of good wafers, the pullover of melt from one bin to the next, has been analyzed. Difficulties with reproducible zinc acceptor doping have been traced to segregation of zinc in the In/Zn alloy used for the doping source. Using EBIC measurments, the pn junction was shown to drift in location depending on factors not always under control. An analysis of contact structures by SIMS showed that the depth to which the sintered Au/Zn contact penetrates into the structure is typically 0.13 microns, or well within the cap layer and out of the p-type cladding and thus not deleterious to laser prformance. The problem of single-mode laser development was investigated and it was shown to be related to the growth habit over four different possible substrate configurations. The fabrication of constricted double heterojunctions, mesa stripe buried heterostructures, and buried heterostructures was discussed, and measurements were presented on the device properties of single-mode buried heterostructure lasers. Results include single spectral line emission at 3 mW and a threshold current of 60 mA.

  1. Novel signal inversion of laser beam induced current for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Qiu, W. C.; Wang, R.; Xu, Z. J.

    2014-05-28

    In this paper, experimental results of temperature-dependent signal inversion of laser beam induced current (LBIC) for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe are reported. LBIC characterization shows that the traps induced by femtosecond laser drilling are sensitive to temperature. Theoretical models for trap-related p-n junction transformation are proposed and demonstrated using numerical simulations. The simulations are in good agreement with the experimental results. The effects of traps and mixed conduction are possibly the main reasons that result in the novel signal inversion of LBIC microscope at room temperature. The research results provide a theoretical guide for practical applications of large-scalemore » array HgCdTe infrared photovoltaic detectors formed by femtosecond laser drilling, which may act as a potential new method for fabricating HgCdTe photodiodes.« less

  2. InP electroluminescence as a tool to directly monitor carrier leakage in InGaAsP/InP buried heterostructure lasers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Stern, M.B.; Brody, E.; Sowell, B.

    1987-12-15

    Direct measurements of homojunction and heterojunction carrier leakage currents in InGaAsP/InP buried heterostructure lasers have been made by monitoring the electroluminescence (EL) at 0.96 ..mu..m in the InP confinement layers. These EL measurements show directly, for the first time, a correlation between homojunction leakage currents and the sublinearity in the 1.3-..mu..m light output-current characteristic. The observed decrease in the 0.96-..mu..m intensity with increasing p-dopant concentration is a direct confirmation that heterojunction leakage is reduced when the doping level in the p-InP confinement layer is increased.

  3. Scaling laws for positron production in laser-electron beam collisions

    NASA Astrophysics Data System (ADS)

    Blackburn, Tom; Ilderton, Anton; Murphy, Christopher; Marklund, Mattias

    2017-10-01

    Showers of gamma rays and positrons are produced when a multi-GeV electron beam collides with a super-intense laser pulse. All-optical realisation of this geometry, where the electron beam is generated by laser-wakefield acceleration, is currently attracting much experimental interest as a probe of radiation reaction and QED effects. These interactions may be modelled theoretically in the framework of strong-field QED or numerically by large-scale PIC simulation. To complement these, we present analytical scaling laws for the electron beam energy loss, gamma ray spectrum, and the positron yield and energy that are valid in the radiation-reaction-dominated regime. These indicate that by employing the collision of a 2 GeV electron beam with a laser pulse of intensity 5 ×1021Wcm-2 , it is possible to produce 10,000 positrons in a single shot at currently available laser facilities. The authors acknowledge support from the Knut and Alice Wallenberg Foundation.

  4. Measurements of cross section of e + e - → p p ¯ π 0 at center-of-mass energies between 4.008 and 4.600 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ablikim, M.; Achasov, M. N.; Ahmed, S.

    Based on e +e - annihilation data samples collected with the BESIII detector at the BEPCII collider at 13 center-of-mass energies from 4.008 to 4.600 GeV, measurements of the Born cross section of e +e -→more » $$p\\bar{p}$$π 0 are then performed. No significant resonant structure is observed in the measured energy dependence of the cross section. The upper limit on the Born cross section of e +e -→Y (4260) →$$p\\bar{p}$$π 0 at the 90% C.L. is determined to be 0.01 pb. The upper limit on the ratio of the branching fractions B(Y(4260)→$$p\\bar{p}$$π 0) / B(Y(4260)→π +π - J/ψ) at the 90% C.L. is determined to be 0.02%.« less

  5. Measurements of cross section of e + e - → p p ¯ π 0 at center-of-mass energies between 4.008 and 4.600 GeV

    DOE PAGES

    Ablikim, M.; Achasov, M. N.; Ahmed, S.; ...

    2017-08-10

    Based on e +e - annihilation data samples collected with the BESIII detector at the BEPCII collider at 13 center-of-mass energies from 4.008 to 4.600 GeV, measurements of the Born cross section of e +e -→more » $$p\\bar{p}$$π 0 are then performed. No significant resonant structure is observed in the measured energy dependence of the cross section. The upper limit on the Born cross section of e +e -→Y (4260) →$$p\\bar{p}$$π 0 at the 90% C.L. is determined to be 0.01 pb. The upper limit on the ratio of the branching fractions B(Y(4260)→$$p\\bar{p}$$π 0) / B(Y(4260)→π +π - J/ψ) at the 90% C.L. is determined to be 0.02%.« less

  6. Si based GeSn light emitter: mid-infrared devices in Si photonics

    NASA Astrophysics Data System (ADS)

    Yu, S. Q.; Ghetmiri, S. A.; Du, W.; Margetis, J.; Zhou, Y.; Mosleh, A.; Al-Kabi, S.; Nazzal, A.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B.; Naseem, H. A.

    2015-02-01

    Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm2.

  7. Room Temperature Ferromagnetic, Anisotropic, Germanium Rich FeGe(001) Alloys

    PubMed Central

    Lungu, George A.; Apostol, Nicoleta G.; Stoflea, Laura E.; Costescu, Ruxandra M.; Popescu, Dana G.; Teodorescu, Cristian M.

    2013-01-01

    Ferromagnetic FexGe1−x with x = 2%–9% are obtained by Fe deposition onto Ge(001) at high temperatures (500 °C). Low energy electron diffraction (LEED) investigation evidenced the preservation of the (1 × 1) surface structure of Ge(001) with Fe deposition. X-ray photoelectron spectroscopy (XPS) at Ge 3d and Fe 2p core levels evidenced strong Fe diffusion into the Ge substrate and formation of Ge-rich compounds, from FeGe3 to approximately FeGe2, depending on the amount of Fe deposited. Room temperature magneto-optical Kerr effect (MOKE) evidenced ferromagnetic ordering at room temperature, with about 0.1 Bohr magnetons per Fe atom, and also a clear uniaxial magnetic anisotropy with the in-plane [110] easy magnetization axis. This compound is a good candidate for promising applications in the field of semiconductor spintronics. PMID:28809330

  8. Direct virtual photon production in Au+Au collisions at s N N = 200   GeV

    DOE PAGES

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; ...

    2017-04-27

    Here we report the direct virtual photon invariant yields in the transverse momentum ranges 1< pT <3GeV/c and 5ee < 0.28GeV/c 2 for 0–80% minimum-bias Au+Au collisions atmore » $$\\sqrt{s}$$$_ {NN}$$ = 200GeV. A clear excess in the invariant yield compared to the nuclear overlap function T AA scaled p+p reference is observed in the p T range 1T <3GeV/c. For p T >6GeV/c the production follows T AA scaling. In conclusion, model calculations with contributions from thermal radiation and initial hard parton scattering are consistent within uncertainties with the direct virtual photon invariant yield.« less

  9. Zn2GeO4 nanowires as efficient electron injection material for electroluminescent devices.

    PubMed

    Wang, Jiangxin; Yan, Chaoyi; Magdassi, Shlomo; Lee, Pooi See

    2013-08-14

    Pure phase Zn2GeO4 nanowires (NWs) were grown by the chemical vapor transport method on p-GaN: Mg/Al2O3 substrate. The as-grown Zn2GeO4 NWs exhibited n-type characteristic due to native defects and formed a p-n heterojunction with the p-GaN substrate. The unique energy level of Zn2GeO4 NWs promotes electron injection into GaN active region while suppressing hole injection into Zn2GeO4 NWs. The device exhibited an emission centered at 426 nm and a low turn-on voltage around 4 V. Zn2GeO4 NWs are first reported in this paper as promising electron transport and injection material for electroluminescent devices.

  10. Evaluation of GeO desorption behavior in the metal∕GeO2∕Ge structure and its improvement of the electrical characteristics

    PubMed Central

    Oniki, Yusuke; Koumo, Hideo; Iwazaki, Yoshitaka; Ueno, Tomo

    2010-01-01

    The relation between germanium monoxide (GeO) desorption and either improvement or deterioration in electrical characteristics of metal∕GeO2∕Ge capacitors fabricated by thermal oxidation has been investigated. In the metal∕GeO2∕Ge stack, two processes of GeO desorption at different sites and at different temperatures were observed by thermal desorption spectroscopy measurements. The electrical characteristics of as-oxidized metal∕GeO2∕Ge capacitors shows a large flat-band voltage shift and minority carrier generation due to the GeO desorption from the GeO2∕Ge interface during oxidation of Ge substrates. On the other hand, the electrical properties were drastically improved by a postmetallization annealing at low temperature resulting in a metal catalyzed GeO desorption from the top interface. PMID:20644659

  11. Laser-initiated explosive electron emission from flat germanium crystals

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Porshyn, V., E-mail: porshyn@uni-wuppertal.de; Mingels, S.; Lützenkirchen-Hecht, D.

    2016-07-28

    Flat Sb-doped germanium (100) crystals were investigated in the triode configuration under pulsed tunable laser illumination (pulse duration t{sub laser} = 3.5 ns and photon energy hν = 0.54–5.90 eV) and under DC voltages <10{sup 4} V. Large bunch charges up to ∼1 μC were extracted from the cathodes for laser pulses >1 MW/cm{sup 2} corresponding to a high quantum efficiency up to 3.3% and cathode currents up to 417 A. This laser-induced explosive electron emission (EEE) from Ge was characterized by its voltage-, laser power- and hν-sensitivity. The analysis of the macroscopic surface damage caused by the EEE is included as well. Moreover, we have carried out firstmore » direct measurements of electron energy distributions produced during the EEE from the Ge samples. The measured electron spectra hint for electron excitations to the vacuum level of the bulk and emission from the plasma plume with an average kinetic energy of ∼0.8 eV.« less

  12. Hot Carrier Dynamics in the X Valley in Si and Ge Measured by Pump-IR-Probe Absorption Spectroscopy

    NASA Technical Reports Server (NTRS)

    Wang, W. B.; Cavicchia, M. A.; Alfano, R. R.

    1996-01-01

    Si is the semiconductor of choice for nanoelectronic roadmap into the next century for computer and other nanodevices. With growing interest in Si, Ge, and Si(sub m)Ge(sub n) strained superlattices, knowledge of the carrier relaxation processes in these materials and structures has become increasingly important. The limited time resolution for earlier studies of carrier dynamics in Ge and Si, performed using Nd:glass lasers, was not sufficient to observe the fast cooling processes. In this paper, we present a direct measurement of hot carrier dynamics in the satellite X valley in Si and Ge by time-resolved infrared(IR) absorption spectroscopy, and show the potential of our technique to identify whether the X valley is the lowest conduction valley in semiconductor materials and structures.

  13. Infrared absorption and admittance spectroscopy of Ge quantum dots on a strained SiGe layer

    NASA Astrophysics Data System (ADS)

    Yakimov, A. I.; Nikiforov, A. I.; Timofeev, V. A.; Dvurechenskii, A. V.

    2011-12-01

    A combined infrared absorption and admittance spectroscopy is carried out in examining the energy level structure and the hole emission process in self-assembled Ge quantum dots (QDs) placed on a strained Si0.65Ge0.35 quantum well (QW), which, in turn, is incorporated in a Si matrix. In the midinfrared spectral range, the dots exhibit three dominant absorption bands peaked at 130, 250 and 390 meV. By a comparison between absorption measurements and six-band {\\bf k}\\;{\\bm \\cdot}\\;{\\bf p} calculations, the long-wave (~130 meV) resonance is attributed to a transition from the QD hole ground state to the two-dimensional heavy-hole states confined in the Si0.65Ge0.35 layer. The mid-wave absorption band around 390 meV is ascribed to a transition from the QD hole ground state to the three-dimensional continuum states of the Si matrix. An equivalent absorption cross section for these two types of transitions is determined to be 1.2 × 10-15 cm2 and 1.2 × 10-16 cm2, respectively. The origin of the transmission minimum around 250 meV is more ambiguous. We tentatively propose that it can be due to transition either from the highest heavy-hole subband of the Si0.65Ge0.35 QW to continuum states above the Si barrier or from the dot states to the light-hole and split-off subbands of the Si0.65Ge0.35 layer. The photoinduced bleaching of the near-infrared absorption is detected under interband optical excitation of undoped samples. This finding is explained by blocking the interband transitions inside the dots due to the state filling effect. By using the admittance spectroscopy, the mechanism of hole escape from QDs in the presence of an ac vertical electric field is identified. A thermally activated emission from the QD ground state into the two-dimensional states of the Si0.65Ge0.35 well is observed. From the temperature- and frequency-dependent measurements the QD hole ground state is determined to be located ~160 meV below the heavy-hole subband of the Si0.65Ge0

  14. MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance

    DTIC Science & Technology

    2017-02-01

    MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance (Invited paper) Christine A...epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on QCL operation, and establishing correlations between epitaxial growth and materials...QCLs emitting in this range. Index terms – Quantum cascade lasers, semiconductor growth, semiconductor epitaxial layers, infrared emitters. I

  15. First-principles study of bandgap tuning in Ge1-xPbxSe

    NASA Astrophysics Data System (ADS)

    Lohani, Himanshu

    2018-03-01

    Narrow bandgap and its tuning are important aspects of materials for their technological applications. In this context group IV-VI semiconductors are one of the interesting candidates. In this paper, we explore the possibility of bandgap tuning in one of the family member of this family GeSe by using isoelectronic Pb doping. Our study is first-principles based electronic structure calculations of Ge1-xPbxSe. This study reveals that the Ge-p and Se-p states are strongly hybridized in GeSe and shows a gap in the DOS at Ef in GeSe. This gap reduces systematically with simultaneous enhancement of the states in the near Ef region as a function of Pb doping. This leads tuning of the indirect bandgap in GeSe via Pb doping. The results of the indirect bandgap decrement are consistent with the experimental findings. We propose a mechanism where the electrostatic effect of dopant Pb cation could be responsible for these changes in the electronic structure of GeSe.

  16. Die Baukastensystematik in der Fördertechnik

    NASA Astrophysics Data System (ADS)

    Sebulke, Johannes

    In der Fördertechnik wird kaum ein größerer Einsatzfall so dem anderen gleichen, dass man zwei Anlagen nach denselben Zeichnungen fertigen kann. Konstruktionszeiten, Rüst- und Umstellungszeiten der Fertigung sind hoch; der Kunde muss bei Einzelanfertigung lange Lieferzeiten in Kauf nehmen. In der Fördertechnik haben sich daher Baukastenprinzip, Standardisierung und die Konstruktion von Erzeugnisreihen weitgehend durchgesetzt.

  17. Quantitative Analyse und Visualisierung der Herzfunktionen

    NASA Astrophysics Data System (ADS)

    Sauer, Anne; Schwarz, Tobias; Engel, Nicole; Seitel, Mathias; Kenngott, Hannes; Mohrhardt, Carsten; Loßnitzer, Dirk; Giannitsis, Evangelos; Katus, Hugo A.; Meinzer, Hans-Peter

    Die computergestützte bildbasierte Analyse der Herzfunktionen ist mittlerweile Standard in der Kardiologie. Die verfügbaren Produkte erfordern meist ein hohes Maß an Benutzerinteraktion und somit einen erhöhten Zeitaufwand. In dieser Arbeit wird ein Ansatz vorgestellt, der dem Kardiologen eine größtenteils automatische Analyse der Herzfunktionen mittels MRT-Bilddaten ermöglicht und damit Zeitersparnis schafft. Hierbei werden alle relevanten herzphysiologsichen Parameter berechnet und mithilfe von Diagrammen und Graphen visualisiert. Diese Berechnungen werden evaluiert, indem die ermittelten Werte mit manuell vermessenen verglichen werden. Der hierbei berechnete mittlere Fehler liegt mit 2,85 mm für die Wanddicke und 1,61 mm für die Wanddickenzunahme immer noch im Bereich einer Pixelgrösse der verwendeten Bilder.

  18. Pulse Shape Correlation for Laser Detection and Ranging (LADAR)

    DTIC Science & Technology

    2010-03-01

    with the incoming measured laser pulse [3]. All of these shapes are symmetric. Siegman and Liu’s findings indicate that the pulse is seldom symmetric...of Engineering, Air Force Institute of Technology (AETC), Wright Pat- terson AFB, OH, March 2007. 10. Siegman , Anthony E. Lasers . University Science...Pulse Shape Correlation for Laser Detection and Ranging (LADAR) THESIS Brian T. Deas, Major, USAF AFIT/GE/ENG/10-07 DEPARTMENT OF THE AIR FORCE AIR

  19. Smartes System für die Energiewende - der Übertragungsnetzbetreiber in der digitalen Zukunft

    NASA Astrophysics Data System (ADS)

    Pflaum, Rainer; Egeler, Tobias

    Die Übertragungsnetze stellen eine zuverlässige Versorgung von Haushalt, Gewerbe und Industrie mit elektrischer Energie sicher und sind damit Grundlage einer modernen Wirtschaft und Gesellschaft. Die mittlerweile unumkehrbaren Entwicklungen der nationalen und europäischen Energiewende stellen den Übertragungsnetzbetreiber in seinen Kernaufgaben, dem Bau und Betrieb von Netzen, dem Markt- und Netzzugang und der Integration der erneuerbaren Energien vor neue und große Herausforderungen. Verbrauchsnahe dezentrale Erzeugung wie verbrauchsferne zentrale Erzeugung muss im Sinne der Gewährleistung der Systemstabilität gemanagt und in Einklang mit dem Verbrauch gebracht werden. Erneuerbare Energien müssen zudem in einem solchen System ihren Beitrag zur System- und Marktintegration leisten. All das erfordert mehr Daten, um in einem Gesamtsystem dynamische Reaktionsmöglichkeiten gewährleisten zu können. Erst die "Digitalisierung" schafft dabei die notwendigen Voraussetzungen die Komplexität zu stemmen. Die Digitalisierung stellt daher ein Kernelement dieses Wandels des Übertragungsnetzbetreibers dar, die einerseits mit zum Entstehen der neuen Herausforderungen beiträgt, andererseits aber auch hilft Werkzeuge bereitzustellen, diesen Herausforderungen zu begegnen. Im folgenden Beitrag wird aufgezeigt, wie die Digitalisierung die Aufgaben und Instrumente des Übertragungsnetzbetreibers verändern. Ausgehend von den heutigen Aufgaben eines Übertragungsnetzbetreibers und dem gültigen Rechtsrahmen werden unter dem Begriff "Notwendiges Set für morgen" smarte Elemente und Werkzeuge beschrieben, die bereits heute im Einsatz sind oder in den nächsten Jahren notwendig werden. Im Anschluss erfolgt anhand einiger Beispiele aus unterschiedlichen Bereichen eine Konkretisierung der Einsatzzwecke der Digitalisierung beim Übertragungsnetzbetreiber. Ein kurzer Ausblick mit Fokus auf den weiteren Veränderungsprozess rundet den Beitrag ab.

  20. Centrality and pseudorapidity dependence of charged hadron production at intermediate p{sub T} in Au+Au collisions at {radical}s{sub NN} = 130 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.

    2004-04-15

    We present STAR measurements of charged hadron production as a function of centrality in Au + Au collisions at {radical}s{sub NN} = 130 GeV. The measurements cover a phase space region of 0.2 < p{sub T} < 6.0 GeV/c in transverse momentum and -1 < {eta} < 1 in pseudorapidity. Inclusive transverse momentum distributions of charged hadrons in the pseudorapidity region 0.5 < |{eta}| < 1 are reported and compared to our previously published results for |{eta}| < 0.5. No significant difference is seen for inclusive p{sub T} distributions of charged hadrons in these two pseudorapidity bins. We measured dN/d{eta}more » distributions and truncated mean p{sub T} in a region of p{sub T} > p{sub T}{sup cut}, and studied the results in the framework of participant and binary scaling. No clear evidence is observed for participant scaling of charged hadron yield in the measured p{sub T} region. The relative importance of hard scattering process is investigated through binary scaling fraction of particle production.« less

  1. Centrality and pseudorapidity dependence of charged hadron production at intermediate p{sub t} in Au+Au collisions at {radical}s{sub NN} = 130 GeV

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.

    2004-04-15

    We present STAR measurements of charged hadron production as a function of centrality in Au + Au collisions at {radical}s{sub NN} = 130 GeV. The measurements cover a phase space region of 0.2 < p{sub T} < 6.0 GeV/c in transverse momentum and 11 < {eta} < 1 in pseudorapidity. Inclusive transverse momentum distributions of charged hadrons in the pseudorapidity region 0.5 < |{eta}| < 1 are reported and compared to our previously published results for |{eta}| < 0.5. No significant difference is seen for inclusive p{sub T} distributions of charged hadrons in these two pseudorapidity bins. We measured dN/d{eta}more » distributions and truncated mean p{sub T} in a region of p{sub T} > P{sub T}{sup cut}, and studied the results in the framework of participant and binary scaling. No clear evidence is observed for participant scaling of charged hadron yield in the measured pT region. The relative importance of hard scattering process is investigated through binary scaling fraction of particle production.« less

  2. GaAs Photovoltaics on Polycrystalline Ge Substrates

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  3. Measurement of the neutron-capture cross section of ⁷⁶Ge and ⁷⁴Ge below 15 MeV and its relevance to 0νββ decay searches of ⁷⁶Ge

    DOE PAGES

    Bhike, Megha; Fallin, B.; Krishichayan, none; ...

    2015-02-01

    The neutron radiative-capture cross section of ⁷⁶Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ~86% ⁷⁶Ge and ~14% ⁷⁴Ge used in the 0νββ searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the ³H(p,n)³He, ²H(d,n)³He and ³H(d,n)⁴He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for ⁷⁴Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution γ-ray spectroscopy wasmore » used to determine the γ-ray activity of the daughter nuclei of interest. For the ⁷⁶Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the ⁷⁴Ge(n,γ)⁷⁵Ge reaction, the present data are about a factor of two larger than predicted. It was found that the ⁷⁴Ge(n,γ)⁷⁵Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the ⁷⁶Ge(n,γ)⁷⁷Ge yield due to the larger cross section of the former reaction.« less

  4. Measurement of the neutron-capture cross section of ⁷⁶Ge and ⁷⁴Ge below 15 MeV and its relevance to 0νββ decay searches of ⁷⁶Ge

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bhike, Megha; Fallin, B.; Krishichayan, none

    The neutron radiative-capture cross section of ⁷⁶Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ~86% ⁷⁶Ge and ~14% ⁷⁴Ge used in the 0νββ searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the ³H(p,n)³He, ²H(d,n)³He and ³H(d,n)⁴He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for ⁷⁴Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution γ-ray spectroscopy wasmore » used to determine the γ-ray activity of the daughter nuclei of interest. For the ⁷⁶Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the ⁷⁴Ge(n,γ)⁷⁵Ge reaction, the present data are about a factor of two larger than predicted. It was found that the ⁷⁴Ge(n,γ)⁷⁵Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the ⁷⁶Ge(n,γ)⁷⁷Ge yield due to the larger cross section of the former reaction.« less

  5. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Velea, A., E-mail: alin.velea@psi.ch; National Institute of Materials Physics, RO-077125 Magurele, Ilfov; Borca, C. N.

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C,more » the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.« less

  6. Structural stability, dynamical stability, thermoelectric properties, and elastic properties of GeTe at high pressure

    NASA Astrophysics Data System (ADS)

    Kagdada, Hardik L.; Jha, Prafulla K.; Śpiewak, Piotr; Kurzydłowski, Krzysztof J.

    2018-04-01

    The stability of GeTe in rhombohedral (R 3 m ), face centred cubic (F m 3 m ), and simple cubic (P m 3 m ) phases has been studied using density functional perturbation theory. The rhombohedral phase of GeTe is dynamically stable at 0 GPa, while F m 3 m and P m 3 m phases are stable at 3.1 and 33 GPa, respectively. The pressure-dependent phonon modes are observed in F m 3 m and P m 3 m phases at Γ and M points, respectively. The electronic and the thermoelectric properties have been investigated for the stable phases of GeTe. The electronic band gap for rhombohedral and F m 3 m phases of GeTe has been observed as 0.66 and 0.17 eV, respectively, while the P m 3 m phase shows metallic behavior. We have used the Boltzmann transport equation under a rigid band approximation and constant relaxation time approximation as implemented in boltztrap code for the calculation of thermoelectric properties of GeTe. The metallic behavior of P m 3 m phase gives a very low value of Seebeck coefficient compared to the other two phases as a function of temperature and the chemical potential μ. It is observed that the rhombohedral phase of GeTe exhibits higher thermoelectric performance. Due to the metallic nature of P m 3 m phase, negligible thermoelectric performance is observed compared to R 3 m and F m 3 m -GeTe. The calculated lattice thermal conductivities are low for F m 3 m -GeTe and high for R 3 m -GeTe. At the relatively higher temperature of 1350 K, the figure of merit ZT is found to be 0.7 for rhombohedral GeTe. The elastic constants satisfy the Born stability criteria for all three phases. The rhombohedral and F m 3 m phases exhibits brittleness and the P m 3 m phase shows ductile nature.

  7. Consecutive magnetic phase diagram of UCoGe-URhGe-UIrGe system

    NASA Astrophysics Data System (ADS)

    Pospíšil, Jiří; Haga, Yoshinori; Miyake, Atsushi; Kambe, Shinsaku; Tateiwa, Naoyuki; Tokunaga, Yo; Honda, Fuminori; Nakamura, Ai; Homma, Yoshiya; Tokunaga, Masashi; Aoki, Dai; Yamamoto, Etsuji

    2018-05-01

    We prepared single crystals in UCo1-xRhxGe and UIr1-xRhxGe systems to establish a complex dU-U-T (dU-U is the shortest interatomic uranium distance and T is temperature) magnetic phase diagram. This recognized a characteristic maximum in magnetic susceptibility at temperature Tmax along the b axis as an important parameter. Three magnetically ordered regions can be distinguished within this scope; first a ferromagnetic region with Curie temperatureGe side with Néel temperature

  8. Anomalous Hall effect in the van der Waals bonded ferromagnet Fe3 -xGeTe2

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; Petrovic, C.

    2018-04-01

    We report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe3 -xGeTe2 (x ≈0.36 ) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρx y/μ0Heff and longitudinal resistivity ρxx 2M /μ0Heff implies that the AHE in Fe3 -xGeTe2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear-M Hall conductivity σxy A below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.

  9. ρ 0 and ω production in deep inelastic μ- p interactions at 280 GeV/c

    NASA Astrophysics Data System (ADS)

    Arneodo, M.; Arvidson, A.; Aubert, J. J.; Badelek, B.; Beaufays, J.; Bee, C. P.; Benchouk, C.; Berghoff, G.; Bird, I.; Blum, D.; Böhm, E.; de Bouard, X.; Brasse, F. W.; Braun, H.; Broll, C.; Brown, S.; Brück, H.; Calen, H.; Chima, J. S.; Ciborowski, J.; Clifft, R.; Coignet, G.; Combley, F.; Coughlan, J.; D'Agostini, G.; Dahlgren, S.; Dengler, F.; Derado, I.; Dreyer, T.; Drees, J.; Düren, M.; Eckardt, V.; Edwards, A.; Edwards, M.; Ernst, T.; Eszes, G.; Favier, J.; Ferrero, M. I.; Figiel, J.; Flauger, W.; Foster, J.; Gabathuler, E.; Gajewski, J.; Gamet, R.; Gayler, J.; Geddes, N.; Grafstrom, P.; Grard, F.; Haas, J.; Hagberg, E.; Hasert, F. J.; Hayman, P.; Heusse, P.; Jaffre, M.; Jacholkowska, A.; Janata, F.; Jancso, G.; Johnson, A. S.; Kabuss, E. M.; Kellner, G.; Korbel, V.; Kruger, J.; Kullander, S.; Landgraf, U.; Lanske, D.; Loken, J.; Long, K.; Maire, M.; Malecki, P.; Manz, A.; Maselli, S.; Mohr, W.; Montanet, F.; Montgomery, H. E.; Nagy, E.; Nassalski, J.; Norton, P. R.; Oakham, F. G.; Osborne, A. M.; Pascaud, C.; Pawlik, B.; Payre, P.; Peroni, C.; Peschel, H.; Pessard, H.; Pettingale, J.; Pietrzyk, B.; Pietrzyk, U.; Pönsgen, B.; Pötsch, M.; Renton, P.; Ribarics, P.; Rith, K.; Rondio, E.; Sandacz, A.; Scheer, M.; Schlagböhmer, A.; Schiemann, H.; Schmitz, N.; Schneegans, M.; Scholz, M.; Schröder, T.; Schouten, M.; Schultze, K.; Sloan, T.; Stier, H. E.; Studt, M.; Taylor, G. N.; Thénard, J. M.; Thompson, J. C.; de La Torre, A.; Toth, J.; Urban, L.; Wallucks, W.; Whalley, M.; Wheeler, S.; Williams, W. S. C.; Wimpenny, S. J.; Windmolders, R.; Wolf, G.

    1986-06-01

    Inclusive distributions of ρ0 and ω mesons have been measured in deep inelastic μ- p interactions at 280 GeV/c. A comparison of the ρ0 cross sections with other leptoproduction experiments is presented. The ω results represent the first observation of this inclusive channel in high energy leptoproduction. The ρ0 and ω yields are found to be equal as may be expected from the available density of states in isospin space. This contrasts with spin angular momentum where the vector to pseudoscalar meson ratio is suppressed relative to the available number of spin states.

  10. Pulse shape discrimination performance of inverted coaxial Ge detectors

    NASA Astrophysics Data System (ADS)

    Domula, A.; Hult, M.; Kermaïdic, Y.; Marissens, G.; Schwingenheuer, B.; Wester, T.; Zuber, K.

    2018-05-01

    We report on the characterization of two inverted coaxial Ge detectors in the context of being employed in future 76Ge neutrinoless double beta (0 νββ) decay experiments. It is an advantage that such detectors can be produced with bigger Ge mass as compared to the planar Broad Energy Ge (BEGe) or p-type Point Contact (PPC) detectors that are currently used in the GERDA and MAJORANA DEMONSTRATOR 0 νββ decay experiments respectively. This will result in a lower background for the search of 0 νββ decay due to a reduction of detector surface to volume ratio, cables, electronics and holders which are dominating nearby radioactive sources. The measured resolution near the 76Ge Q-value at 2039 keV is 2.3 keV FWHM and their pulse-shape discrimination of background events are similar to BEGe and PPC detectors. It is concluded that this type of Ge-detector is suitable for usage in 76Ge 0 νββ decay experiments.

  11. Ge nanopillar solar cells epitaxially grown by metalorganic chemical vapor deposition

    PubMed Central

    Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Park, Won-Kyu; Lee, Jaejin

    2017-01-01

    Radial junction solar cells with vertically aligned wire arrays have been widely studied to improve the power conversion efficiency. In this work, we report the first Ge nanopillar solar cell. Nanopillar arrays are selectively patterned on p-type Ge (100) substrates using nanosphere lithography and deep reactive ion etching processes. Nanoscale radial and planar junctions are realized by an n-type Ge emitter layer which is epitaxially grown by MOCVD using isobutylgermane. In situ epitaxial surface passivation is employed using an InGaP layer to avoid high surface recombination rates and Fermi level pinning. High quality n-ohmic contact is realized by protecting the top contact area during the nanopillar patterning. The short circuit current density and the power conversion efficiency of the Ge nanopillar solar cell are demonstrated to be improved up to 18 and 30%, respectively, compared to those of the Ge solar cell with a planar surface. PMID:28209964

  12. Umgang mit Antithrombotika bei Operationen an der Haut vor und nach Publikation der entsprechenden S3-Leitlinie.

    PubMed

    Gaskins, Matthew; Dittmann, Martin; Eisert, Lisa; Werner, Ricardo Niklas; Dressler, Corinna; Löser, Christoph; Nast, Alexander

    2018-03-01

    Laut einer Befragung im Jahre 2012 war der Umgang mit Antithrombotika bei dermatochirurgischen Eingriffen in Deutschland sehr heterogen. 2014 wurde erstmals eine evidenzbasierte Leitlinie zu diesem Thema veröffentlicht. Es wurde eine anonyme Befragung derselben Stichprobe zum Umgang mit Antithrombotika sowie zu Kenntnissen der Leitlinie durchgeführt. Die Ergebnisse wurden als relative Häufigkeiten berichtet und denen aus 2012 gegenübergestellt. 208 Antwortbögen wurden ausgewertet (Rücklaufquote: 36,6 %). Die große Mehrheit der Dermatologen erklärte, kleinere Eingriffe unter Fortführung der Therapie mit Phenprocoumon, niedrig dosierter Acetylsalicylsäure (≤ 100 mg) und Clopidogrel sowie mit direkten oralen Antikoagulanzien durchzuführen. Bei größeren Eingriffen war der Umgang hingegen weiterhin heterogen, insbesondere unter niedergelassenen Dermatologen. Der Anteil der Dermatologen, die Phenprocoumon, Acetylsalicylsäure und Clopidogrel leitlinienkonform verwendeten, hat sich insgesamt vergrößert. Führten 2012 beispielsweise 53,8 % der Klinikärzte bzw. 36,3 % der niedergelassenen Dermatologen eine große Exzision unter Fortführung der Therapie mit niedrig dosierter Acetylsalicylsäure durch, taten dies 2017 90,2 % bzw. 57,8 % (Phenprocoumon: 33,8 % bzw. 11,9 % auf 63,9 % bzw. 29,9 %; Clopidogrel: 36,9 % bzw. 23,2 % auf 63,9 % bzw. 30,6 %). Unter den Klinikärzten war ein hoher Anteil mit der Leitlinie vertraut und fand diese hilfreich. Eine Zunahme des leitlinienkonformen Verhaltens war bei allen Eingriffen zu verzeichnen. Bei größeren Eingriffen zeigte sich trotz deutlicher Verbesserung die Notwendigkeit verstärkter Anstrengungen zur Leitlinienumsetzung bzw. zur Identifizierung von Implementierungsbarrieren. © 2018 Deutsche Dermatologische Gesellschaft (DDG). Published by John Wiley & Sons Ltd.

  13. Energy and charge transfer effects in two-dimensional van der Waals hybrid nanostructures on periodic gold nanopost array

    NASA Astrophysics Data System (ADS)

    Kim, Jun Young; Kim, Sun Gyu; Youn, Jong Won; Lee, Yongjun; Kim, Jeongyong; Joo, Jinsoo

    2018-05-01

    Two-dimensional (2D) semiconducting MoS2 and WSe2 flakes grown by chemical vapor deposition were mechanically hybridized. A hexagonal boron nitride (h-BN) dielectric flake was inserted between MoS2 and WSe2 flakes to investigate the nanoscale optical properties of 2D van der Waals hybrid nanostructures. The fabricated MoS2/WSe2 and MoS2/h-BN/WSe2 van der Waals hybrid nanostructures were loaded on a periodic gold nanopost (Au-NPo) array to study energy and charge transfer effects at the surface plasmon resonance (SPR) condition. Nanoscale photoluminescence (PL) spectra of the 2D hybrid nanostructures were measured using a high-resolution laser confocal microscope (LCM). A shift of the LCM PL peak of the MoS2/WSe2 n-p hybrid nanostructures was observed owing to the charge transfer. In contrast, the shift of the LCM PL peak of the MoS2/h-BN/WSe2 n-insulator-p hybrid nanostructure was not considerable, as the inserted h-BN dielectric layer prevented the charge transfer. The intensity of the LCM PL peak of the MoS2/h-BN/WSe2 hybrid nanostructure considerably increased once the nanostructure was loaded on the Au-NPo array, owing to the energy transfer between the 2D materials and the Au-NPo array at the SPR condition, which was confirmed by the increase in the LCM Raman intensity.

  14. High Efficiency Electron-Laser Interactions in Tapered Helical Undulators

    NASA Astrophysics Data System (ADS)

    Duris, Joseph Patrick

    Efficient coupling of relativistic electron beams with high power radiation lies at the heart of advanced accelerator and light source research and development. The inverse free electron laser is a stable accelerator capable of harnessing very high intensity laser electric fields to efficiently transfer large powers from lasers to electron beams. In this dissertation, we first present the theoretical framework to describe the interaction, and then apply our improved understanding of the IFEL to the design and numerical study of meter-long, GeV IFELs for compact light sources. The central experimental work of the dissertation is the UCLA BNL helical inverse free electron laser experiment at the Accelerator Test Facility in Brookhaven National Laboratory which used a strongly tapered 54cm long, helical, permanent magnet undulator and a several hundred GW CO2 laser to accelerate electrons from 52 to 106MeV, setting new records for inverse free electron laser energy gain (54MeV) and average accelerating gradient (100MeV/m). The undulator design and fabrication as well as experimental diagnostics are presented. In order to improve the stability and quality of the accelerated electron beam, we redesigned the undulator for a slightly reduced output energy by modifying the magnet gap throughout the undulator, and we used this modified undulator to demonstrated capture of >25% of the injected beam without prebunching. In the study of heavily loaded GeV inverse free electron lasers, we show that a majority of the power may be transferred from a laser to the accelerated electron beam. Reversing the process to decelerate high power electron beams, a mechanism we refer to as tapering enhanced stimulated superradiant amplification, offers a clear path to high power light sources. We present studies of radiation production for a wide range of wavelengths (10mum, 13nm, and 0.3nm) using this method and discuss the design for a deceleration experiment using the same undulator used

  15. Werner Heisenberg zum 100. Geburtstag: Pionier der Quantenmechanik

    NASA Astrophysics Data System (ADS)

    Jacobi, Manfred

    2001-11-01

    Werner Heisenberg war eine der prägendsten Gestalten der Physik des 20. Jahrhunderts. Zu seinen wichtigsten Verdiensten gehören die Grundlegung der Quantenmechanik, die Formulierung der Unschärferelationen sowie die Beteiligung an der Ausarbeitung der Kopenhagener Deutung der Quantenmechanik. Darüber hinaus lieferte er Arbeiten von fundamentalem Charakter zur Theorie des Atomkerns, zur kosmischen Strahlung und zur Quantenfeldtheorie. Während des Krieges war er an den Arbeiten des Uranvereins beteiligt, der die Möglichkeit einer Entwicklung von Kernwaffen untersuchte, jedoch über Vorarbeiten zur Reaktorphysik nicht hinauskam. Wegen dieser Tätigkeit wurde er bei Kriegsende für einige Monate in England interniert. Nach seiner Rückkehr widmete er sich vor allem dem Aufbau der Physik in Deutschland, die während der NS-Zeit nahezu ihrer gesamten Substanz beraubt worden war.

  16. Lattice preferred orientation in MnGeO3 post-perovskite at high-temperature

    NASA Astrophysics Data System (ADS)

    Nagaya, Y.; Hirose, K.; Sata, N.; Ohishi, Y.

    2009-12-01

    In the Earth’s lowermost mantle which is called D” layer, shear-wave splitting is often observed. The velocity of horizontally polarized S-waves are faster than polarized S-waves in many areas of the D” layer. The D” layer is now recognized as being made up with the post-perovskite (PPv)-type MgSiO3 phase. MgSiO3 PPv has a strong elastic anisotropy because of its layered crystal structure. Therefore, it is expected that a lattice preferred orientation (LPO) of PPv may explain the observed seismic anisotropy. LPOs of PPv have been investigated by the high-pressure experiments using a diamond anvil cell (DAC) (Merkel et al., 2006; 2007; Okada et al., 2009). However, the reported experiments using the DAC were made only at the room temperature. In order to understand the nature of PPv deformation under the lower mantle conditions, it is necessary to operate the deformation experiments at high-temperature (~2500 K). In this study, so as to examine the LPO and the dominant slip plane of PPv at simultaneously high P-T conditions, we conducted the high-temperature plastic deformation experiments in a laser-heated diamond anvil cell (LHDAC) using synchrotron radial X-ray diffraction techniques at the beamline BL10XU, SPring-8. In the radial X-ray diffraction experiments, X-ray was irradiated to the sample perpendicular to the compression axis through gasket. LPO was investigated on the basis of the variations of diffraction intensity. We adopted a cubic boron nitride and beryllium composite gasket to obtain a radial X-ray diffraction pattern. In order to deform a sample at high temperature, we had newly developed a membrane system for the deformation experiments. We are able to regulate the gas pressure in the membrane of the DAC, and therefore compress the sample at high temperature during the laser heating. Starting material was orthopyroxene (OPx) with a composition of MnGeO3, which is an analogue of MgSiO3. First, MnGeO3 PPv was synthesized directly from OPx

  17. Stable and selective self-assembly of α-lipoic acid on Ge(001) for biomolecule immobilization

    NASA Astrophysics Data System (ADS)

    Kazmierczak, M.; Flesch, J.; Mitzloff, J.; Capellini, G.; Klesse, W. M.; Skibitzki, O.; You, C.; Bettenhausen, M.; Witzigmann, B.; Piehler, J.; Schroeder, T.; Guha, S.

    2018-05-01

    We demonstrate a novel method for the stable and selective surface functionalization of germanium (Ge) embedded in silicon dioxide. The Ge(001) surface is functionalized using α-lipoic acid (ALA), which can potentially be utilized for the immobilization of a wide range of biomolecules. We present a detailed pH-dependence study to establish the effect of the incubation pH value on the adsorption layer of the ALA molecules. A threshold pH value for functionalization is identified, dividing the examined pH range into two regions. Below a pH value of 7, the formation of a disordered ALA multilayer is observed, whereas a stable well-ordered ALA mono- to bi-layer on Ge(001) is achieved at higher pH values. Furthermore, we analyze the stability of the ALA layer under ambient conditions, revealing the most stable functionalized Ge(001) surface to effectively resist oxidation for up to one week. Our established functionalization method paves the way towards the successful immobilization of biomolecules in future Ge-based biosensors.

  18. Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity.

    PubMed

    Yuryev, Vladimir A; Arapkina, Larisa V; Storozhevykh, Mikhail S; Chapnin, Valery A; Chizh, Kirill V; Uvarov, Oleg V; Kalinushkin, Victor P; Zhukova, Elena S; Prokhorov, Anatoly S; Spektor, Igor E; Gorshunov, Boris P

    2012-07-23

    : Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in the process of Ge hut array formation is investigated at low and high temperatures of Ge deposition. Different dynamics of RHEED patterns during the deposition of Ge atoms in different growth modes is observed, which reflects the difference in adatom mobility and their 'condensation' fluxes from Ge 2D gas on the surface for different modes, which in turn control the nucleation rates and densities of Ge clusters. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films.Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 μm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. A new design of quantum dot infrared photodetectors is proposed.By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies ranged from 0.3 to 1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk

  19. Comprehensive thermoelectric properties of n- and p-type 78a/o Si - 22a/o Ge alloy

    NASA Technical Reports Server (NTRS)

    Raag, V.

    1978-01-01

    The time and temperature dependence of the thermoelectric properties on n- and p-type 78 a/o Si - 22 a/o Ge alloy are presented in detail for the range of temperatures of zero to 1000 C and operating times up to twelve years. The mechanisms responsible for the time dependence of the properties are discussed and mathematical models used in the derivation of the property values from experimental data are presented. The thermoelectric properties for each polarity type of the alloy are presented as a function of temperature for various operating times.

  20. Room Temperature Ferromagnetic, Anisotropic, Germanium Rich FeGe(001) Alloys.

    PubMed

    Lungu, George A; Apostol, Nicoleta G; Stoflea, Laura E; Costescu, Ruxandra M; Popescu, Dana G; Teodorescu, Cristian M

    2013-02-21

    Ferromagnetic Fe x Ge 1- x with x = 2%-9% are obtained by Fe deposition onto Ge(001) at high temperatures (500 °C). Low energy electron diffraction (LEED) investigation evidenced the preservation of the (1 × 1) surface structure of Ge(001) with Fe deposition. X-ray photoelectron spectroscopy (XPS) at Ge 3d and Fe 2p core levels evidenced strong Fe diffusion into the Ge substrate and formation of Ge-rich compounds, from FeGe₃ to approximately FeGe₂, depending on the amount of Fe deposited. Room temperature magneto-optical Kerr effect (MOKE) evidenced ferromagnetic ordering at room temperature, with about 0.1 Bohr magnetons per Fe atom, and also a clear uniaxial magnetic anisotropy with the in-plane easy magnetization axis. This compound is a good candidate for promising applications in the field of semiconductor spintronics.