Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties

NASA Astrophysics Data System (ADS)

Zhang, Yu; Xu, Jun; Wang, You-Nian; Choi, Chi Kyu; Zhou, Da-Yu

2016-03-01

Amorphous hafnium dioxide (HfO2) film was prepared on Si (100) by facing-target mid-frequency reactive magnetron sputtering under different oxygen/argon gas ratio at room temperature with high purity Hf target. 3D surface profiler results showed that the deposition rates of HfO2 thin film under different O2/Ar gas ratio remain unchanged, indicating that the facing target midfrequency magnetron sputtering system provides effective approach to eliminate target poisoning phenomenon which is generally occurred in reactive sputtering procedure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) demonstrated that the gradual reduction of oxygen vacancy concentration and the densification of deposited film structure with the increase of oxygen/argon (O2/Ar) gas flow ratio. Atomic force microscopy (AFM) analysis suggested that the surface of the as-deposited HfO2 thin film tends to be smoother, the root-meansquare roughness (RMS) reduced from 0.876 nm to 0.333 nm while O2/Ar gas flow ratio increased from 1/4 to 1/1. Current-Voltage measurements of MOS capacitor based on Au/HfO2/Si structure indicated that the leakage current density of HfO2 thin films decreased by increasing of oxygen partial pressure, which resulted in the variations of pore size and oxygen vacancy concentration in deposited thin films. Based on the above characterization results the leakage current mechanism for all samples was discussed systematically.

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

PubMed Central

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

2018-01-01

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

Interfacial structure and electrical properties of ultrathin HfO2 dielectric films on Si substrates by surface sol-gel method

NASA Astrophysics Data System (ADS)

Gong, You-Pin; Li, Ai-Dong; Qian, Xu; Zhao, Chao; Wu, Di

2009-01-01

Ultrathin HfO2 films with about ~3 nm thickness were deposited on n-type (1 0 0) silicon substrates using hafnium chloride (HfCl4) source by the surface sol-gel method and post-deposition annealing (PDA). The interfacial structure and electrical properties of ultrathin HfO2 films were investigated. The HfO2 films show amorphous structures and smooth surface morphologies with a very thin interfacial oxide layer of ~0.5 nm and small surface roughness (~0.45 nm). The 500 °C PDA treatment forms stronger Hf-O bonds, leading to passivated traps, and the interfacial layer is mainly Hf silicate (HfxSiyOz). Equivalent oxide thickness of around 0.84 nm of HfO2/Si has been obtained with a leakage current density of 0.7 A cm-2 at Vfb + 1 V after 500 °C PDA. It was found that the current conduction mechanism of HfO2/Si varied from Schottky-Richardson emission to Fowler-Nordheim tunnelling at an applied higher positive voltage due to the activated partial traps remaining in the ultrathin HfO2 films.

Electrical properties of HfO2 high- k thin-film MOS capacitors for advanced CMOS technology

NASA Astrophysics Data System (ADS)

Khairnar, A. G.; Patil, L. S.; Salunke, R. S.; Mahajan, A. M.

2015-11-01

We deposited the hafnium dioxide (HfO2) thin films on p-Si (100) substrates. The thin films were deposited with deposition time variations, viz 2, 4, 7 and 20 min using RF-sputtering technique. The thickness and refractive index of the films were measured using spectroscopic ellipsometer. The thicknesses of the films were measured to be 13.7, 21.9, 35.38 and 92.2 nm and refractive indices of 1.90, 1.93, 1.99 and 1.99, respectively, of the films deposited for 2, 4, 7 and 20 min deposition time. The crystal structures of the deposited HfO2 thin films were determined using XRD spectra and showed the monoclinic structure, confirmed with the ICDD card no 34-0104. Aluminum metallization was carried to form the Al/HfO2/ p-Si MOS structures by using thermal evaporation system with electrode area of 12.56 × 10-4 cm2. Capacitance voltage and current voltage measurements were taken to know electrical behavior of these fabricated MOS structures. The electrical parameters such as dielectric constant, flat-band shift and interface trap density determined through CV measurement were 7.99, 0.11 V and 6.94 × 1011 eV-1 cm-2, respectively. The low leakage current density was obtained from IV measurement of fabricated MOS structure at 1.5 V is 4.85 × 10-10 Acm-2. Aforesaid properties explored the suitability of the fabricated HfO2 high- k-based MOS capacitors for advanced CMOS technology.

A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants

DOE PAGES

Park, Min Hyuk; Schenk, Tony; Fancher, Christopher M.; ...

2017-04-19

The origin of the unexpected ferroelectricity in doped HfO 2 thin films is now considered to be the formation of a non-centrosymmetric Pca2 1 orthorhombic phase. Due to the polycrystalline nature of the films as well as their extremely small thickness (~10 nm) and mixed orientation and phase composition, structural analysis of doped HfO 2 thin films remains a challenging task. As a further complication, the structural similarities of the orthorhombic and tetragonal phase are difficult to distinguish by typical structural analysis techniques such as X-ray diffraction. To resolve this issue, the changes in the grazing incidence X-ray diffraction (GIXRD)more » patterns of HfO 2 films doped with Si, Al, and Gd are systematically examined. For all dopants, the shift of o111/ t101 diffraction peak is observed with increasing atomic layer deposition (ALD) cycle ratio, and this shift is thought to originate from the orthorhombic to P4 2/ nmc tetragonal phase transition with decreasing aspect ratio (2 a/(b + c) for orthorhombic and c/a for the tetragonal phase). For quantitative phase analysis, Rietveld refinement is applied to the GIXRD patterns. A progressive phase transition from P2 1/c monoclinic to orthorhombic to tetragonal is confirmed for all dopants, and a strong relationship between orthorhombic phase fraction and remanent polarization value is uniquely demonstrated. The concentration range for the ferroelectric properties was the narrowest for the Si-doped HfO 2 films. As a result, the dopant size is believed to strongly affect the concentration range for the ferroelectric phase stabilization, since small dopants can strongly decrease the free energy of the tetragonal phase due to their shorter metal–oxygen bonds.« less

A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Min Hyuk; Schenk, Tony; Fancher, Christopher M.

The origin of the unexpected ferroelectricity in doped HfO 2 thin films is now considered to be the formation of a non-centrosymmetric Pca2 1 orthorhombic phase. Due to the polycrystalline nature of the films as well as their extremely small thickness (~10 nm) and mixed orientation and phase composition, structural analysis of doped HfO 2 thin films remains a challenging task. As a further complication, the structural similarities of the orthorhombic and tetragonal phase are difficult to distinguish by typical structural analysis techniques such as X-ray diffraction. To resolve this issue, the changes in the grazing incidence X-ray diffraction (GIXRD)more » patterns of HfO 2 films doped with Si, Al, and Gd are systematically examined. For all dopants, the shift of o111/ t101 diffraction peak is observed with increasing atomic layer deposition (ALD) cycle ratio, and this shift is thought to originate from the orthorhombic to P4 2/ nmc tetragonal phase transition with decreasing aspect ratio (2 a/(b + c) for orthorhombic and c/a for the tetragonal phase). For quantitative phase analysis, Rietveld refinement is applied to the GIXRD patterns. A progressive phase transition from P2 1/c monoclinic to orthorhombic to tetragonal is confirmed for all dopants, and a strong relationship between orthorhombic phase fraction and remanent polarization value is uniquely demonstrated. The concentration range for the ferroelectric properties was the narrowest for the Si-doped HfO 2 films. As a result, the dopant size is believed to strongly affect the concentration range for the ferroelectric phase stabilization, since small dopants can strongly decrease the free energy of the tetragonal phase due to their shorter metal–oxygen bonds.« less

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

NASA Astrophysics Data System (ADS)

Materlik, Robin; Künneth, Christopher; Falkowski, Max; Mikolajick, Thomas; Kersch, Alfred

2018-04-01

III-valent dopants have shown to be most effective in stabilizing the ferroelectric, crystalline phase in atomic layer deposited, polycrystalline HfO2 thin films. On the other hand, such dopants are commonly used for tetragonal and cubic phase stabilization in ceramic HfO2. This difference in the impact has not been elucidated so far. The prospect is a suitable doping to produce ferroelectric HfO2 ceramics with a technological impact. In this paper, we investigate the impact of Al, Y, and La doping, which have experimentally proven to stabilize the ferroelectric Pca21 phase in HfO2, in a comprehensive first-principles study. Density functional theory calculations reveal the structure, formation energy, and total energy of various defects in HfO2. Most relevant are substitutional electronically compensated defects without oxygen vacancy, substitutional mixed compensated defects paired with a vacancy, and ionically compensated defect complexes containing two substitutional dopants paired with a vacancy. The ferroelectric phase is strongly favored with La and Y in the substitutional defect. The mixed compensated defect favors the ferroelectric phase as well, but the strongly favored cubic phase limits the concentration range for ferroelectricity. We conclude that a reduction of oxygen vacancies should significantly enhance this range in Y doped HfO2 thin films. With Al, the substitutional defect hardly favors the ferroelectric phase before the tetragonal phase becomes strongly favored with the increasing concentration. This could explain the observed field induced ferroelectricity in Al-doped HfO2. Further Al defects are investigated, but do not favor the f-phase such that the current explanation remains incomplete for Al doping. According to the simulation, doping alone shows clear trends, but is insufficient to replace the monoclinic phase as the ground state. To explain this fact, some other mechanism is needed.

Understanding the Structure of Amorphous Thin Film Hafnia - Final Paper

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, Andre

2015-08-27

Hafnium Oxide (HfO 2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO 2 thin films which hasn’t been done with the technique of this study. In this study, two HfO 2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer.more » Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO 2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO 2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO 2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.« less

Diffusion reaction of oxygen in HfO2/SiO2/Si stacks.

PubMed

Ferrari, S; Fanciulli, M

2006-08-03

We study the oxidation mechanism of silicon in the presence of a thin HfO2 layer. We performed a set of annealing in 18O2 atmosphere on HfO2/SiO2/Si stacks observing the 18O distribution in the SiO2 layer with time-of-flight secondary ion mass spectrometry (ToF-SIMS). The 18O distribution in HfO2/SiO2/Si stacks upon 18O2 annealing suggests that what is responsible for SiO2 growth is the molecular O2, whereas no contribution is found of the atomic oxygen to the oxidation. By studying the dependence of the oxidation velocity from oxygen partial pressure and annealing temperature, we demonstrate that the rate-determining step of the oxidation is the oxygen exchange at the HfO2/SiO2 interface. When moisture is chemisorbed in HfO2 films, the oxidation of the underlying silicon substrate becomes extremely fast and its kinetics can be described as a wet silicon oxidation process. The silicon oxidation during O2 annealing of the atomic layer deposited HfO2/Si is fast in its early stage due to chemisorbed moisture and becomes slow after the first 10 s.

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

NASA Astrophysics Data System (ADS)

Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.

2017-10-01

A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 109 cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (Vo +) which limit electron movement through the switching layer.

Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.

PubMed

Wei, Yaowei; Pan, Feng; Zhang, Qinghua; Ma, Ping

2015-01-01

Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.

Electrical properties of radio-frequency sputtered HfO2 thin films for advanced CMOS technology

NASA Astrophysics Data System (ADS)

Sarkar, Pranab Kumar; Roy, Asim

2015-08-01

The Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO2 film have been studied employing Al/HfO2/p-Si metal-oxide-semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO2 film is obtained as 23,7.57×1011eV-1 cm-2 and 2.7×10-5 Acm-2, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

NASA Astrophysics Data System (ADS)

Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

2018-03-01

In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

NASA Astrophysics Data System (ADS)

Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, Stefan; Schlösser, Till; van Bentum, Ralf; Trentzsch, Martin; Schröder, Uwe; Mikolajick, Thomas

2013-10-01

Throughout the 22 nm technology node HfO2 is established as a reliable gate dielectric in contemporary complementary metal oxide semiconductor (CMOS) technology. The working principle of ferroelectric field effect transistors FeFET has also been demonstrated for some time for dielectric materials like Pb[ZrxTi1-x]O3 and SrBi2Ta2O9. However, integrating these into contemporary downscaled CMOS technology nodes is not trivial due to the necessity of an extremely thick gate stack. Recent developments have shown HfO2 to have ferroelectric properties, given the proper doping. Moreover, these doped HfO2 thin films only require layer thicknesses similar to the ones already in use in CMOS technology. This work will show how the incorporation of Si induces ferroelectricity in HfO2 based capacitor structures and finally demonstrate non-volatile storage in nFeFETs down to a gate length of 100 nm. A memory window of 0.41 V can be retained after 20,000 switching cycles. Retention can be extrapolated to 10 years.

Resistive switching of Sn-doped In2O3/HfO2 core-shell nanowire: geometry architecture engineering for nonvolatile memory.

PubMed

Huang, Chi-Hsin; Chang, Wen-Chih; Huang, Jian-Shiou; Lin, Shih-Ming; Chueh, Yu-Lun

2017-05-25

Core-shell NWs offer an innovative approach to achieve nanoscale metal-insulator-metal (MIM) heterostructures along the wire radial direction, realizing three-dimensional geometry architecture rather than planar type thin film devices. This work demonstrated the tunable resistive switching characteristics of ITO/HfO 2 core-shell nanowires with controllable shell thicknesses by the atomic layer deposition (ALD) process for the first time. Compared to planar HfO 2 thin film device configuration, ITO/HfO 2 core-shell nanowire shows a prominent resistive memory behavior, including lower power consumption with a smaller SET voltage of ∼0.6 V and better switching voltage uniformity with variations (standard deviation(σ)/mean value (μ)) of V SET and V RESET from 0.38 to 0.14 and from 0.33 to 0.05 for ITO/HfO 2 core-shell nanowire and planar HfO 2 thin film, respectively. In addition, endurance over 10 3 cycles resulting from the local electric field enhancement can be achieved, which is attributed to geometry architecture engineering. The concept of geometry architecture engineering provides a promising strategy to modify the electric-field distribution for solving the non-uniformity issue of future RRAM.

Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

NASA Astrophysics Data System (ADS)

Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

2017-04-01

Hafnium oxide (HfO2) thin films were grown on cleaned P-type <1 0 0> Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

Understanding the Structure of High-K Gate Oxides - Oral Presentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, Andre

2015-08-25

Hafnium Oxide (HfO 2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO 2 thin films which hasn’t been done with the technique of this study. In this study, two HfO 2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer.more » Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO 2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO 2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO 2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.« less

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

NASA Astrophysics Data System (ADS)

Tan, Qiuhong; Wang, Qianjin; Liu, Yingkai; Yan, Hailong; Cai, Wude; Yang, Zhikun

2018-04-01

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO2 defect control layer shows a low leakage current density of 3.1 × 10-9 A/cm2 at a gate voltage of - 3 V.

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer.

PubMed

Tan, Qiuhong; Wang, Qianjin; Liu, Yingkai; Yan, Hailong; Cai, Wude; Yang, Zhikun

2018-04-27

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd) 4 Ti 3 O 12 films as insulator, and HfO 2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO 2 defect control layer shows a low leakage current density of 3.1 × 10 -9  A/cm 2 at a gate voltage of - 3 V.

Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films (PostPrint)

DTIC Science & Technology

2014-09-01

sputter-deposition. A large band gap coupled with low absorption provide optical transparency over a broad range in the electromagnetic spectrum; HfO2...k) in the middle of the visible spec- trum, and C influences n(k) to a greater extent in shorter wave - lengths [31]. Note that this principle behind...Approved for publicnanocrystalline HfO2 films crystallize in monoclinic structure. Fur - thermore, increasing Ts results in improved structural order and

Interface composition of InAs nanowires with Al2O3 and HfO2 thin films

NASA Astrophysics Data System (ADS)

Timm, R.; Hjort, M.; Fian, A.; Borg, B. M.; Thelander, C.; Andersen, J. N.; Wernersson, L.-E.; Mikkelsen, A.

2011-11-01

Vertical InAs nanowires (NWs) wrapped by a thin high-κ dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al2O3 and HfO2 films. The native oxide on the NWs is significantly reduced upon high-κ deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.

Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Rauwel, E.; Dubourdieu, C.; Holländer, B.; Rochat, N.; Ducroquet, F.; Rossell, M. D.; Van Tendeloo, G.; Pelissier, B.

2006-07-01

Addition of yttrium in HfO2 thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range (2.0-99.5at.%). The cubic structure of HfO2 is stabilized for 6.5at.%. The permittivity is maximum for yttrium content of 6.5-10at.%; in this range, the effective permittivity, which results from the contribution of both the cubic phase and silicate phase, is of 22. These films exhibit low leakage current density (5×10-7A /cm2 at -1V for a 6.4nm film). The cubic phase is stable upon postdeposition high temperature annealing at 900°C under NH3.

Comparison of Multilayer Dielectric Thin Films for Future Metal-Insulator-Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2

NASA Astrophysics Data System (ADS)

Park, Sang-Uk; Kwon, Hyuk-Min; Han, In-Shik; Jung, Yi-Jung; Kwak, Ho-Young; Choi, Woon-Il; Ha, Man-Lyun; Lee, Ju-Il; Kang, Chang-Yong; Lee, Byoung-Hun; Jammy, Raj; Lee, Hi-Deok

2011-10-01

In this paper, two kinds of multilayered metal-insulator-metal (MIM) capacitors using Al2O3/HfO2/Al2O3 (AHA) and SiO2/HfO2/SiO2 (SHS) were fabricated and characterized for radio frequency (RF) and analog mixed signal (AMS) applications. The experimental results indicate that the AHA MIM capacitor (8.0 fF/µm2) is able to provide a higher capacitance density than the SHS MIM capacitor (5.1 fF/µm2), while maintaining a low leakage current of about 50 nA/cm2 at 1 V. The quadratic voltage coefficient of capacitance, α gradually decreases as a function of stress time under constant voltage stress (CVS). The parameter variation of SHS MIM capacitors is smaller than that of AHA MIM capacitors. The effects of CVS on voltage linearity and time-dependent dielectric breakdown (TDDB) characteristics were also investigated.

Effect of heat treatment on properties of HfO2 film deposited by ion-beam sputtering

NASA Astrophysics Data System (ADS)

Liu, Huasong; Jiang, Yugang; Wang, Lishuan; Li, Shida; Yang, Xiao; Jiang, Chenghui; Liu, Dandan; Ji, Yiqin; Zhang, Feng; Chen, Deying

2017-11-01

The effects of atmosphere heat treatment on optical, stress, and microstructure properties of an HfO2 film deposited by ion-beam sputtering were systematically researched. The relationships among annealing temperature and refractive index, extinction coefficient, physical thickness, forbidden-band width, tape trailer width, Urbach energy, crystal phase structure, and stress were assessed. The results showed that 400 °C is the transformation point, and the microstructure of the HfO2 film changed from an amorphous into mixed-phase structure. Multistage phonons appeared on the HfO2 film, and the trends of the refractive index, extinction coefficient, forbidden-band width change, and Urbach energy shifted from decrease to increase. With the elevation of the annealing temperature, the film thickness increased monotonously, the compressive stress gradually turned to tensile stress, and the transformation temperature point for the stress was between 200 °C and 300 °C. Therefore, the change in the stress is the primary cause for the shifts in thin-film thickness.

Vacuum ultraviolet thin films. I - Optical constants of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 thin films. II - Vacuum ultraviolet all-dielectric narrowband filters

NASA Technical Reports Server (NTRS)

Zukic, Muamer; Torr, Douglas G.; Spann, James F.; Torr, Marsha R.

1990-01-01

An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.

Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

PubMed Central

Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Priya, Shashank

2015-01-01

We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~106 s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology. PMID:25683062

First-principles modeling of hafnia-based nanotubes.

PubMed

Evarestov, Robert A; Bandura, Andrei V; Porsev, Vitaly V; Kovalenko, Alexey V

2017-09-15

Hybrid density functional theory calculations were performed for the first time on structure, stability, phonon frequencies, and thermodynamic functions of hafnia-based single-wall nanotubes. The nanotubes were rolled up from the thin free layers of cubic and tetragonal phases of HfO 2 . It was shown that the most stable HfO 2 single-wall nanotubes can be obtained from hexagonal (111) layer of the cubic phase. Phonon frequencies have been calculated for different HfO 2 nanolayers and nanotubes to prove the local stability and to find the thermal contributions to their thermodynamic functions. The role of phonons in stability of nanotubes seems to be negligible for the internal energy and noticeable for the Helmholtz free energy. Zone folding approach has been applied to estimate the connection between phonon modes of the layer and nanotubes and to approximate the nanotube thermodynamic properties. It is found that the zone-folding approximation is sufficiently accurate for heat capacity, but less accurate for entropy. The comparison has been done between the properties of TiO 2 , ZrO 2 , and HfO 2 . © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Hafnium oxide films for application as gate dielectrics

NASA Astrophysics Data System (ADS)

Hsu, Shuo-Lin

The deposition and characterization of HfO2 films for potential application as a high-kappa gate dielectric in MOS devices has been investigated. DC magnetron reactive sputtering was utilized to prepare the HfO2 films. Structural, chemical, and electrical analyses were performed to characterize the various physical, chemical and electrical properties of the sputtered HfO2 films. The sputtered HfO2 films were annealed to simulate the dopant activation process used in semiconductor processing, and to study the thermal stability of the high-kappa, films. The changes in the film properties due to the annealing are also discussed in this work. Glancing angle XRD was used to analyse the atomic scale structure of the films. The as deposited films exhibit an amorphous, regardless of the film thickness. During post-deposition annealing, the thicker films crystallized at lower temperature (< 600°C), and ultra-thin (5.8 nm) film crystallized at higher temperature (600--720°C). The crystalline phase which formed depended on the thickness of the films. The low temperature phase (monoclinic) formed in the 10--20 nm annealed films, and high temperature phase (tetragonal) formed in the ultra-thin annealed HfO2 film. TEM cross-section studies of as deposited samples show that an interfacial layer (< 1nm) exists between HfO2/Si for all film thicknesses. The interfacial layer grows thicker during heat treatment, and grows more rapidly when grain boundaries are present. XPS surface analysis shows the as deposited films are fully oxidized with an excess of oxygen. Interfacial chemistry analysis indicated that the interfacial layer is a silicon-rich silicate layer, which tends to transform to silica-like layer during heat treatment. I-V measurements show the leakage current density of the Al/as deposited-HfO 2/Si MOS diode is of the order of 10-3 A/cm 2, two orders of magnitude lower than that of a ZrO2 film with similar physical thickness. Carrier transport is dominated by Schottky emission at lower electric fields, and by Frenkel-Poole emission in the higher electric field region. After annealing, the leakage current density decreases significantly as the structure remains amorphous structure. It is suggested that this decrease is assorted with the densification and defect healing which accures when the porous as-deposited amorphous structure is annealed. The leakage current density increases of the HfO2 layer crystallizes on annealing, which is attributed to the presence of grain boundaries. C-V measurements of the as deposited film shows typical C-V characteristics, with negligible hystersis, a small flat band voltage shift, but great frequency dispersion. The relative permittivity of HfO2/interfacial layer stack obtained from the capacitance at accumulation is 15, which corresponds to an EOT (equivalent oxide thickness) = 1.66 nm. After annealing, the frequency dispersion is greatly enhanced, and the C-V curve is shifted toward the negative voltage. Reliability tests show that the HfO2 films which remain amorphous after annealing possess superior resistance to constant voltage stress and ambient aging. This study concluded that the sputtered HfO 2 films exhibit an amorphous as deposited. Postdeposition annealing alters the crystallinity, interfacial properties, and electrical characteristics. The HfO2 films which remain amorphous structure after annealing possess the best electrical properties.

Ion induced crystallization and grain growth of hafnium oxide nano-particles in thin-films deposited by radio frequency magnetron sputtering

NASA Astrophysics Data System (ADS)

Dhanunjaya, M.; Khan, S. A.; Pathak, A. P.; Avasthi, D. K.; Nageswara Rao, S. V. S.

2017-12-01

We report on the swift heavy ion (SHI) irradiation induced crystallization and grain growth of HfO2 nanoparticles (NPs) within the HfO2 thin-films deposited by radio frequency (RF) magnetron sputtering technique. As grown films consisted of amorphous clusters of non-spherical HfO2 NPs. These amorphous clusters are transformed to crystalline grains under 100 MeV Ag ion irradiation. These crystallites are found to be spherical in shape and are well dispersed within the films. The average size of these crystallites is found to increase with fluence. Pristine and irradiated films have been characterized by high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), grazing incident x-ray diffraction (GIXRD) and photo luminescence (PL) measurements. The PL measurements suggested the existence of different types of oxygen related defects in pristine and irradiated samples. The observed results on crystallization and grain growth under the influence of SHI are explained within the framework of thermal spike model. The results are expected to provide useful information for understanding the electronic excitation induced crystallization of nanoparticles and can lead to useful applications in electronic and photonic devices.

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

PubMed Central

Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

2017-01-01

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface states with a density (Dit) reaching ~7.03 × 1011 cm−2 eV−1. This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in Dit could be achieved by thermally diffusing S atoms to the MoS2-HfO2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS2 devices with carrier transport enhancement. PMID:28084434

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

PubMed

Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

2017-01-13

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

Engineering of the chemical reactivity of the Ti/HfO₂ interface for RRAM: experiment and theory.

PubMed

Calka, Pauline; Sowinska, Malgorzata; Bertaud, Thomas; Walczyk, Damian; Dabrowski, Jarek; Zaumseil, Peter; Walczyk, Christian; Gloskovskii, Andrei; Cartoixà, Xavier; Suñé, Jordi; Schroeder, Thomas

2014-04-09

The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental-theoretical approach. Based on the use of oxygen-isotope marked Hf*O2, the oxygen scavenging capability of the Ti layer is clearly proven. More importantly, in line with ab initio theory, the combined HAXPES-Tof-SIMS study of the thin films deposited by MBE clearly establishes a strong impact of the HfO2 thin film morphology on the Ti/HfO2 interface reactivity. Low-temperature deposition is thus seen as a RRAM processing compatible way to establish the critical amount of oxygen vacancies to achieve reproducible and reliable resistance switching performances.

Eu-doped ZnO-HfO2 hybrid nanocrystal-embedded low-loss glass-ceramic waveguides

NASA Astrophysics Data System (ADS)

Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

2016-03-01

We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO2 -(30-x) HfO2-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO2, with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO2-HfO2 composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO2 hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu2+ and Eu3+ in the SiO2-HfO2-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu{}2+,3+-doped ternary waveguides exhibit low propagation losses (0.3 ± 0.2 dB cm-1 at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO2 nanocrystal-embedded SiO2-HfO2-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.

Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

NASA Astrophysics Data System (ADS)

Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

2017-07-01

In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

Habituation/Fatigue behavior of a synapse memristor based on IGZO-HfO2 thin film.

PubMed

Jiang, Ran; Ma, Pengfei; Han, Zuyin; Du, Xianghao

2017-08-24

A synaptic memristor based on IGZO and oxygen-deficient HfO 2 films has been demonstrated. The memristor exhibits a fatigue response to a monotonic stimulus of voltage pulses, which is analogous to the habituation behavior of biological memory. The occurrence of habituation is nearly simultaneous with the transition from short-term memory to long-term memory. The movement and redistribution of oxygen species with the assistance of polarization in HfO 2 layer are responsible for the above results. The observation of habituation behavior proves the potential prospect of memristor on the mimic of biological neuron.

In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth mode, interface reactions and energy band alignment

NASA Astrophysics Data System (ADS)

Chen, Chang Pang; Ong, Bin Leong; Ong, Sheau Wei; Ong, Weijie; Tan, Hui Ru; Chai, Jian Wei; Zhang, Zheng; Wang, Shi Jie; Pan, Ji Sheng; Harrison, Leslie John; Kang, Hway Chuan; Tok, Eng Soon

2017-10-01

Room temperature growth of HfO2 thin film on clean 2H-MoS2 via plasma-sputtering of Hf-metal target in an argon/oxygen environment was studied in-situ using x-ray photoelectron spectroscopy (XPS). The deposited film was observed to grow akin to a layer-by-layer growth mode. At the onset of growth, a mixture of sulfate- and sulfite-like species (SOx2- where x = 3, 4), and molybdenum trioxide (MoO3), are formed at the HfO2/MoS2 interface. An initial decrease in binding energies for both Mo 3d and S 2p core-levels of the MoS2 substrate by 0.4 eV was also observed. Their binding energies, however, did not change further with increasing HfO2 thickness. There was no observable change in the Hf4f core-level binding energy throughout the deposition process. With increasing HfO2 deposition, MoO3 becomes buried at the interface while SOx2- was observed to be present in the film. The shift of 0.4 eV for both Mo 3d and S 2p core-levels of the MoS2 substrate can be attributed to a charge transfer from the substrate to the MoO3/SOx2--like interface layer. Consequently, the Type I heterojunction valence band offset (conduction band offset) becomes 1.7 eV (2.9 eV) instead of 1.3 eV (3.3 eV) expected from considering the bulk HfO2 and MoS2 valence band offset (conduction band offset). The formation of these states and its influence on band offsets will need to be considered in their device applications.

Synthesis, integration, and characterization of metal oxide films as alternative gate dielectric materials

NASA Astrophysics Data System (ADS)

Lin, You-Sheng

ZrO2 and HfO2 were investigated in this study to replace SiO2 as the potential gate dielectric materials in metal-oxide-semiconductor field effect transistors. ZrO2 and HfO2 films were deposited on p-type Si (100) wafers by an atomic layer chemical vapor deposition (ALCVD) process using zirconium (IV) t-butoxide and hafnium (IV) t-butoxide as the metal precursors, respectively. Oxygen was used alternatively with these metal alkoxide precursors into the reactor with purging and evacuation in between. The as-deposited ZrO2 and HfO2 films were stoichiometric and uniform based on X-ray photoemission spectroscopy and ellipsometry measurements. X-ray diffraction analysis indicated that the deposited films were amorphous, however, the high-resolution transmission electron microscopy showed an interfacial layer formation on the silicon substrate. Time-of-flight secondary ion mass spectrometry and medium energy ion scattering analysis showed significant intermixing between metal oxides and Si, indicating the formation of metal silicates, which were confirmed by their chemical etching resistance in HF solutions. The thermal stability of ZrO2 and HfO2 thin films on silicon was examined by monitoring their decomposition temperatures in ultra-high vacuum, using in-situ synchrotron radiation ultra-violet photoemission spectroscopy. The as-deposited ZrO2 and HfO2 thin films were thermally stable up to 880°C and 950°C in vacuum, respectively. The highest achieveable dielectric constants of as-deposited ZrO 2 and HfO2 were 21 and 24, respectively, which were slightly lower than the reported dielectric constants of bulk ZrO2 and HfO 2. These slight reductions in dielectric constants were attributed to the formation of the interfacial metal silicate layers. Very small hysteresis and interface state density were observed for both metal oxide films. Their leakage currents were a few orders of magnitude lower than that of SiO 2 at the same equivalent oxide thickness. NMOSFETs were also fabricated with the as-deposited metal oxide films, and reasonable ID-V D and IG-VG results were obtained. The electron mobilities were high from devices built using a plasma etching process to pattern the metal oxide films. However, they can be degraded if an HF wet etching process was used due to the large contact resistences. Upon oxygen annealing, the formation of SiOx at the interface improved the thermal stability of the as-deposited metal oxide films, however, lower overall dielectric constant and higher leakage current were observed. Upon ammonia annealing, the formation of SiOxNy improved not only the thermal stability but also reduced the leakage current. However, the overall dielectric constant of the film was still reduced due to the formation of the additional interfacial layer.

Radiation damage effects in far-ultraviolet filters, thin films, and substrates.

PubMed

Keffer, C E; Torr, M R; Zukic, M; Spann, J F; Torr, D G; Kim, J

1994-09-01

Advances in vacuum ultraviolet thin-film filter technology have been made through the use of filter designs with multilayers of materials such as Al(2)O(3), BaF(2), CaF(2), HfO(2), LaF(3), MgF(2), and SiO(2). Our immediate application for these filters will be in an imaging system to be flown on a satellite where a 2 × 9 R(E) orbit will expose the instrument to approximately 250 krad of radiation. Because to our knowledge no previous studies have been made on the potential radiation damage of these materials in the thin-film format, we report on such an assessment here. Transmittances and reflectances of BaF(2), CaF(2), HfO(2), MgF(2), and SiO(2) thin films on MgF(2) substrates, Al(2)O(3) thin films on fused-silica substrates, uncoated fused silica and MgF(2), and four multilayer filters made from these materials were measured from 120 to 180 nm beforeand after irradiation by 250 krad from a (60)Co gamma radiation source. No radiation-induced losses in transmittance or reflectance occurred in this wavelength range. Additional postradiation measurements from 160 to 300 nm indicates 2-5% radiation-induced absorption near 260 nm in some of the samples with MgF(2) substrates. From these measurements we conclude that far-ultraviolet filters made from the materials tested should experience less than 5% change from exposure to up to 250 krad of high-energy radiation in space applications.

Intrinsic Defect Ferromagnetism: The case of Hafnium Oxide

NASA Astrophysics Data System (ADS)

Das Pemmaraju, Chaitanya

2005-03-01

In view of the recent experimental reports of intrinsic ferromagnetism in Hafnium Oxide (HfO2) thin film systems ootnotetextM. Venkatesan, C. B. Fitzgerald, J. M. D. Coey Nature 430, 630 (2004) Brief Communications, we carried out first principles investigations to look for magnetic structure in HfO2 possibly brought about by the presence of small concentrations of intrinsic point defects. Ab initio electronic structure calculations using Density Functional Theory (DFT) show that isolated cation vacancy sites in HfO2 lead to the formation of high spin defect states which couple ferromagnetically to each other. Interestingly, these high spin states are observed in the low symmetry monoclinic and tetragonal phases while the highly symmetric cubic flourite phase exhibits a non-magnetic ground state. Detailed studies of the electronic structure of cation vacancies in the three crystalline phases of Hafnia show that symmetry leading to orbitally degenerate defect levels is not a pre-requsite for ferromagnetism and that the interplay between Kinetic, Coulomb and Exchange energy together with favourable coupling to the Crystalline environment can lead to high spin ferromagnetic ground states even in extreme low symmetry systems like monoclinic HfO2. These findings open up a much wider class of systems to the possibility of intrinsic defect ferromagnetism.

Control of magnetism by electrical charge doping or redox reactions in a surface-oxidized Co thin film with a solid-state capacitor structure

NASA Astrophysics Data System (ADS)

Hirai, T.; Koyama, T.; Chiba, D.

2018-03-01

We have investigated the electric field (EF) effect on magnetism in a Co thin film with a naturally oxidized surface. The EF was applied to the oxidized Co surface through a gate insulator layer made of HfO2, which was formed using atomic layer deposition (ALD). The efficiency of the EF effect on the magnetic anisotropy in the sample with the HfO2 layer deposited at the appropriate temperature for the ALD process was relatively large compared to the previously reported values with an unoxidized Co film. The coercivity promptly and reversibly followed the variation in gate voltage. The modulation of the channel resistance was at most ˜0.02%. In contrast, a dramatic change in the magnetic properties including the large change in the saturation magnetic moment and a much larger EF-induced modulation of the channel resistance (˜10%) were observed in the sample with a HfO2 layer deposited at a temperature far below the appropriate temperature range. The response of these properties to the gate voltage was very slow, suggesting that a redox reaction dominated the EF effect on the magnetism in this sample. The frequency response for the capacitive properties was examined to discuss the difference in the mechanism of the EF effect observed here.

Development and characterization of ultrathin hafnium titanates as high permittivity gate insulators

NASA Astrophysics Data System (ADS)

Li, Min

High permittivity or high-kappa materials are being developed for use as gate insulators for future ultrascaled metal oxide semiconductor field effect transistors (MOSFETs). Hafnium containing compounds are the leading candidates. Due to its moderate permittivity, however, it is difficult to achieve HfO2 gate structures with an EOT well below 1.0 nm. One approach to increase HfO2 permittivity is combining it with a very high-kappa material, such as TiO2. In this thesis, we systematically studied the electrical and physical characteristics of high-kappa hafnium titanates films as gate insulators. A series of HfxTi1-xO2 films with well-controlled composition were deposited using an MOCVD system. The physical properties of the films were analyzed using a variety of characterization techniques. X-ray micro diffraction indicates that the Ti-rich thin film is more immune to crystallization. TEM analysis showed that the thick stoichiometric HfTiO 4 film has an orthorhombic structure and large anisotropic grains. The C-V curves from the devices with the hafnium titanates films displayed relatively low hysteresis. In a certain composition range, the interfacial layer (IL) EOT and permittivity of HfxTi1-x O2 increases linearly with increasing Ti. The charge is negative for HfxTi1-xO2/IL and positive for Si/IL interface, and the magnitude increases as Hf increases. For ultra-thin films (less than 2 nm EOT), the leakage current increases with increasing HE Moreover, the Hf-rich sample has weaker temperature dependence of the current. In the MOSFET devices with the hafnium titanates films, normal transistor characteristics were observed, also electron mobility degradation. Next, we investigated the effects that different pre-deposition surface treatments, including HF dipping, NH3 surface nitridation, and HfO2 deposition, have on the electrical properties of hafnium titanates. Surface nitridation shows stronger effect than the thin HfO2 layer. The nitrided samples displayed a negative flat band voltage shift and larger hysteresis relative to the HF-dipped samples. The IL EOT reduction by mtridation increases with increasing HE Surface nitridation also induces extra charge, more considerable at the Si/IL interface. The leakage current is reduced in the Hf-rich samples with a nitride layer. Electron mobility degradation by surface nitridation was also observed.

Surface complexation modeling of Cu(II) adsorption on mixtures of hydrous ferric oxide and kaolinite

PubMed Central

Lund, Tracy J; Koretsky, Carla M; Landry, Christopher J; Schaller, Melinda S; Das, Soumya

2008-01-01

Background The application of surface complexation models (SCMs) to natural sediments and soils is hindered by a lack of consistent models and data for large suites of metals and minerals of interest. Furthermore, the surface complexation approach has mostly been developed and tested for single solid systems. Few studies have extended the SCM approach to systems containing multiple solids. Results Cu adsorption was measured on pure hydrous ferric oxide (HFO), pure kaolinite (from two sources) and in systems containing mixtures of HFO and kaolinite over a wide range of pH, ionic strength, sorbate/sorbent ratios and, for the mixed solid systems, using a range of kaolinite/HFO ratios. Cu adsorption data measured for the HFO and kaolinite systems was used to derive diffuse layer surface complexation models (DLMs) describing Cu adsorption. Cu adsorption on HFO is reasonably well described using a 1-site or 2-site DLM. Adsorption of Cu on kaolinite could be described using a simple 1-site DLM with formation of a monodentate Cu complex on a variable charge surface site. However, for consistency with models derived for weaker sorbing cations, a 2-site DLM with a variable charge and a permanent charge site was also developed. Conclusion Component additivity predictions of speciation in mixed mineral systems based on DLM parameters derived for the pure mineral systems were in good agreement with measured data. Discrepancies between the model predictions and measured data were similar to those observed for the calibrated pure mineral systems. The results suggest that quantifying specific interactions between HFO and kaolinite in speciation models may not be necessary. However, before the component additivity approach can be applied to natural sediments and soils, the effects of aging must be further studied and methods must be developed to estimate reactive surface areas of solid constituents in natural samples. PMID:18783619

Measurement of Thicknesses of High-κ Gate-Dielectric Films on Silicon by Angle-Resolved XPS

NASA Astrophysics Data System (ADS)

Powell, Cedric; Smekal, Werner; Werner, Wolfgang

2006-03-01

We report on the use of a new NIST database for the Simulation of Electron Spectra for Surface Analysis (SESSA) in measuring thicknesses of candidate high-κ gate-dielectric materials (HfO2, HfSiO4, ZrO2, and ZrSiO4) on silicon by angle-resolved XPS. For conventional measurements of film thicknesses, effective attenuation lengths (EALs) have been computed for these materials from SESSA as a function of film thickness and photoelectron emission angle (i.e., to simulate the effects of tilting the sample). These EALs are believed to be more accurate than similar EALs obtained from the transport approximation because realistic cross sections are used for both elastic and inelastic scattering in the film and substrate materials. We also present ``calibration curves'' showing calculated ratios of selected photoelectron intensities from thin films of HfO2 on Si with an intermediate SiO2 layer. These ratios provide a simple and convenient means of determining the thicknesses of SiO2 and HfO2 films for particular measurement conditions.

Resistive switching characteristics of HfO2-based memory devices on flexible plastics.

PubMed

Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig

2014-11-01

In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.

Radiation Damage Effects in Far Ultraviolet Filters and Substrates

NASA Technical Reports Server (NTRS)

Keffer, Charles E.; Torr, Marsha R.; Zukic, Muamer; Spann, James F.; Torr, Douglas G.; Kim, Jongmin

1993-01-01

New advances in VUV thin film filter technology have been made using filter designs with multilayers of materials such as Al2O3, BaF2, CaF2, HfO2, LaF3, MgF2, and SiO2. Our immediate application for these filters will be in an imaging system to be flown on a satellite where a 2 X 9 R(sub E) orbit will expose the instrument to approximately 275 krads of radiation. In view of the fact that no previous studies have been made on potential radiation damage of these materials in the thin film format, we report on such an assessment here. Transmittances and reflectances of BaF2, CaF2, HfO2, LaF3, MgF2, and SiO2 thin films on MgF2 substrates, Al2O3 thin films on fused silica substrates, uncoated fused silica and MgF2, and four multilayer filters made from these materials were measured from 120 nm to 180 nm before and after irradiation by 250 krads from a Co-60 gamma radiation source. No radiation-induced losses in transmittance or reflectance occurred in this wavelength range. Additional postradiation measurements from 160 nm to 300 nm indicated a 3 - 5% radiation-induced absorption near 260 nm in some of the samples with MgF2 substrates. From these measurements it is concluded that far ultraviolet filters made from the materials tested should experience less that 5% change from exposure to up to 250 krads of high energy radiation in space applications.

ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire capacitor structure fabricated solely by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Fujisawa, Hironori; Kuwamoto, Kei; Nakashima, Seiji; Shimizu, Masaru

2016-02-01

HfO2-based thin films are one of the key dielectric and ferroelectric materials in Si-CMOS LSIs as well as in oxide electronic nanodevices. In this study, we demonstrated the fabrication of a ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire (NW) capacitor structure solely by metalorganic chemical vapor deposition (MOCVD). 15-nm-thick dielectric (Hf,Zr)O2 and 40-nm-thick top ZnO electrode layers were uniformly grown by MOCVD on a ZnO NW template with average diameter, length, and aspect ratio of 110 nm, 10 µm, and ˜90, respectively. The diameter and aspect ratio of the resultant trilayerd NWs are 200-300 nm and above 30, respectively. The crystalline phase of HfO2 and stacked the structure are also discussed.

Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

NASA Astrophysics Data System (ADS)

Wu, Li-Fan; Zhang, Yu-Ming; Lv, Hong-Liang; Zhang, Yi-Men

2016-10-01

Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37 × 10-6 A/cm2 and 3.22 × 10-6 A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Q ot) value and the interface state density (D it). Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advance Research Project, China (Grant No. 513xxxxx306), the National Natural Science Foundation of China (Grant No. 51302215), the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 14JK1656), and the Science and Technology Project of Shaanxi Province, China (Grant No. 2016KRM029).

Low-temperature post-deposition annealing investigation for 3D charge trap flash memory by Kelvin probe force microscopy

NASA Astrophysics Data System (ADS)

Huo, Zongliang; Jin, Lei; Han, Yulong; Li, Xinkai; Ye, Tianchun; Liu, Ming

2015-01-01

The influence of post-deposition annealing (PDA) temperature condition on charge distribution behavior of HfO2 thin films was systematically investigated by various-temperature Kelvin probe force microscopy technology. Contact potential difference profiles demonstrated that charge storage capability shrinks with decreasing annealing temperature from 1,000 to 500 °C and lower. Compared to 1,000 °C PDA, it was found that 500 °C PDA causes deeper effective trap energy level, suppresses lateral charge spreading, and improves the retention characteristics. It is concluded that low-temperature PDA can be adopted in 3D HfO2-based charge trap flash memory to improve the thermal treatment compatibility of the bottom peripheral logic and upper memory arrays.

Current Thermal Emission from Photonic Nanostructures Composed of TA, W, GE, and HFO2 Thin Films

DTIC Science & Technology

2015-03-01

absorptive wavelength bands in the SWIR to LWIR range. Ellipsometric measurements and models were used in order to extract the optical constants of thin...parts of the complex dielectric function of tungsten at 294 K (room temperature) , 1100 K, 1600 K as calculated from the Drude model , Eq (25...real part and k is the imaginary. Values were obtained using the Drude model , Eq (25), with the measured optical parameters in Table 1 from [67] at

Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

NASA Astrophysics Data System (ADS)

Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

2014-01-01

Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

Transmission and reflection studies of thin films in the vacuum ultraviolet

NASA Technical Reports Server (NTRS)

Peterson, Lennart R.

1989-01-01

Both the transmittance and reflectance of 2 mm thick MgF2 substrates and of thin films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on these substrates were measured for the wavelength range 120 nm to 230 nm. Results for BaF2, LaF2 and MgF2 show promise as being good materials from which interference filters can be made. The software and related hardware needed to take large amounts of data automatically in future measurements of the transmittance and reflectance was developed.

On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes.

PubMed

Simon, Daniel K; Jordan, Paul M; Mikolajick, Thomas; Dirnstorfer, Ingo

2015-12-30

A controlled field-effect passivation by a well-defined density of fixed charges is crucial for modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer deposition contain negative fixed charges. Electrical measurements on slant-etched layers reveal that these charges are located within a 1 nm distance to the interface with the Si substrate. When inserting additional interface layers, the fixed charge density can be continuously adjusted from 3.5 × 10(12) cm(-2) (negative polarity) to 0.0 and up to 4.0 × 10(12) cm(-2) (positive polarity). A HfO2 interface layer of one or more monolayers reduces the negative fixed charges in Al2O3 to zero. The role of HfO2 is described as an inert spacer controlling the distance between Al2O3 and the Si substrate. It is suggested that this spacer alters the nonstoichiometric initial Al2O3 growth regime, which is responsible for the charge formation. On the basis of this charge-free HfO2/Al2O3 stack, negative or positive fixed charges can be formed by introducing additional thin Al2O3 or SiO2 layers between the Si substrate and this HfO2/Al2O3 capping layer. All stacks provide very good passivation of the silicon surface. The measured effective carrier lifetimes are between 1 and 30 ms. This charge control in Al2O3 nanolayers allows the construction of zero-fixed-charge passivation layers as well as layers with tailored fixed charge densities for future solar cell concepts and other field-effect based devices.

Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

NASA Astrophysics Data System (ADS)

Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.

2007-04-01

Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

Study of the morphology of ZnS thin films deposited on different substrates via chemical bath deposition.

PubMed

Gómez-Gutiérrez, Claudia M; Luque, P A; Castro-Beltran, A; Vilchis-Nestor, A R; Lugo-Medina, Eder; Carrillo-Castillo, A; Quevedo-Lopez, M A; Olivas, A

2015-01-01

In this work, the influence of substrate on the morphology of ZnS thin films by chemical bath deposition is studied. The materials used were zinc acetate, tri-sodium citrate, thiourea, and ammonium hydroxide/ammonium chloride solution. The growth of ZnS thin films on different substrates showed a large variation on the surface, presenting a poor growth on SiO2 and HfO2 substrates. The thin films on ITO substrate presented a uniform and compact growth without pinholes. The optical properties showed a transmittance of about 85% in the visible range of 300-800 nm with band gap of 3.7 eV. © Wiley Periodicals, Inc.

Three dimensional graphene transistor for ultra-sensitive pH sensing directly in biological media.

PubMed

Ameri, Shideh Kabiri; Singh, Pramod K; Sonkusale, Sameer R

2016-08-31

In this work, pH sensing directly in biological media using three dimensional liquid gated graphene transistors is presented. The sensor is made of suspended network of graphene coated all around with thin layer of hafnium oxide (HfO2), showing high sensitivity and sensing beyond the Debye-screening limit. The performance of the pH sensor is validated by measuring the pH of isotonic buffered, Dulbecco's phosphate buffered saline (DPBS) solution, and of blood serum derived from Sprague-Dawley rat. The pH sensor shows high sensitivity of 71 ± 7 mV/pH even in high ionic strength media with molarities as high as 289 ± 1 mM. High sensitivity of this device is owing to suspension of three dimensional graphene in electrolyte which provides all around liquid gating of graphene, leading to higher electrostatic coupling efficiency of electrolyte to the channel and higher gating control of transistor channel by ions in the electrolyte. Coating graphene with hafnium oxide film (HfO2) provides binding sites for hydrogen ions, which results in higher sensitivity and sensing beyond the Debye-screening limit. The 3D graphene transistor offers the possibility of real-time pH measurement in biological media without the need for desaltation or sample preparation. Copyright © 2016 Elsevier B.V. All rights reserved.

A flexible, high-performance magnetoelectric heterostructure of (001) oriented Pb(Zr0.52Ti0.48)O3 film grown on Ni foil

NASA Astrophysics Data System (ADS)

Palneedi, Haribabu; Yeo, Hong Goo; Hwang, Geon-Tae; Annapureddy, Venkateswarlu; Kim, Jong-Woo; Choi, Jong-Jin; Trolier-McKinstry, Susan; Ryu, Jungho

2017-09-01

In this study, a flexible magnetoelectric (ME) heterostructure of PZT/Ni was fabricated by depositing a (001) oriented Pb(Zr0.52Ti0.48)O3 (PZT) film on a thin, flexible Ni foil buffered with LaNiO3/HfO2. Excellent ferroelectric properties and large ME voltage coefficient of 3.2 V/cmṡOe were realized from the PZT/Ni heterostructure. The PZT/Ni composite's high performance was attributed to strong texturing of the PZT film, coupled with the compressive stress in the piezoelectric film. Besides, reduced substrate clamping in the PZT film due to the film on the foil structure and strong interfacial bonding in the PZT/LaNiO3/HfO2/Ni heterostructure could also have contributed to the high ME performance of PZT/Ni.

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

PubMed

Itoh, Takeki; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

2016-07-07

We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

Study of Direct-Contact HfO2/Si Interfaces

PubMed Central

Miyata, Noriyuki

2012-01-01

Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs) but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs. PMID:28817060

Field-enhanced route to generating anti-Frenkel pairs in HfO2

NASA Astrophysics Data System (ADS)

Schie, Marcel; Menzel, Stephan; Robertson, John; Waser, Rainer; De Souza, Roger A.

2018-03-01

The generation of anti-Frenkel pairs (oxygen vacancies and oxygen interstitials) in monoclinic and cubic HfO2 under an applied electric field is examined. A thermodynamic model is used to derive an expression for the critical field strength required to generate an anti-Frenkel pair. The critical field strength of EaFcr˜101GVm-1 obtained for HfO2 exceeds substantially the field strengths routinely employed in the forming and switching operations of resistive switching HfO2 devices, suggesting that field-enhanced defect generation is negligible. Atomistic simulations with molecular static (MS) and molecular dynamic (MD) approaches support this finding. The MS calculations indicated a high formation energy of Δ EaF≈8 eV for the infinitely separated anti-Frenkel pair, and only a decrease to Δ EaF≈6 eV for the adjacent anti-Frenkel pair. The MD simulations showed no defect generation in either phase for E <3 GVm-1 , and only sporadic defect generation in the monoclinic phase (at E =3 GVm-1 ) with fast (trec<4 ps ) recombination. At even higher E but below EaFcr both monoclinic and cubic structures became unstable as a result of field-induced deformation of the ionic potential wells. Further MD investigations starting with preexisting anti-Frenkel pairs revealed recombination of all pairs within trec<1 ps , even for the case of neutral vacancies and charged interstitials, for which formally there is no electrostatic attraction between the defects. In conclusion, we find no physically reasonable route to generating point-defects in HfO2 by an applied field.

High-frequency oscillation and tracheal gas insufflation in patients with severe acute respiratory distress syndrome and traumatic brain injury: an interventional physiological study

PubMed Central

2013-01-01

Introduction In acute respiratory distress syndrome (ARDS), combined high-frequency oscillation (HFO) and tracheal gas insufflation (TGI) improves gas exchange compared with conventional mechanical ventilation (CMV). We evaluated the effect of HFO-TGI on PaO2/fractional inspired O2 (FiO2) and PaCO2, systemic hemodynamics, intracranial pressure (ICP), and cerebral perfusion pressure (CPP) in patients with traumatic brain injury (TBI) and concurrent severe ARDS. Methods We studied 13 TBI/ARDS patients requiring anesthesia, hyperosmolar therapy, and ventilation with moderate-to-high CMV-tidal volumes for ICP control. Patients had PaO2/FiO2 <100 mm Hg at end-expiratory pressure ≥10 cm H2O. Patients received consecutive, daily, 12-hour rescue sessions of HFO-TGI interspersed with 12-hour periods of CMV. HFO-TGI was discontinued when the post-HFO-TGI PaO2/FiO2 exceeded 100 mm Hg for >12 hours. Arterial/central-venous blood gases, hemodynamics, and ICP were recorded before, during (every 4 hours), and after HFO-TGI, and were analyzed by using repeated measures analysis of variance. Respiratory mechanics were assessed before and after HFO-TGI. Results Each patient received three to four HFO-TGI sessions (total sessions, n = 43). Pre-HFO-TGI PaO2/FiO2 (mean ± standard deviation (SD): 83.2 ± 15.5 mm Hg) increased on average by approximately 130% to163% during HFO-TGI (P < 0.01) and remained improved by approximately 73% after HFO-TGI (P < 0.01). Pre-HFO-TGI CMV plateau pressure (30.4 ± 4.5 cm H2O) and respiratory compliance (37.8 ± 9.2 ml/cm H2O), respectively, improved on average by approximately 7.5% and 20% after HFO-TGI (P < 0.01 for both). During HFO-TGI, systemic hemodynamics remained unchanged. Transient improvements were observed after 4 hours of HFO-TGI versus pre-HFO-TGI CMV in PaCO2 (37.7 ± 9.9 versus 41.2 ± 10.8 mm Hg; P < 0.01), ICP (17.2 ± 5.4 versus 19.7 ± 5.9 mm Hg; P < 0.05), and CPP (77.2 ± 14.6 versus 71.9 ± 14.8 mm Hg; P < 0.05). Conclusions In TBI/ARDS patients, HFO-TGI may improve oxygenation and respiratory mechanics, without adversely affecting PaCO2, hemodynamics, or ICP. These findings support the use of HFO-TGI as a rescue ventilatory strategy in patients with severe TBI and imminent oxygenation failure due to severe ARDS. PMID:23844839

Photovoltaic Enhancement with Ferroelectric HfO2Embedded in the Structure of Solar Cells

NASA Astrophysics Data System (ADS)

Eskandari, Rahmatollah; Malkinski, Leszek

Enhancing total efficiency of the solar cells is focused on the improving one or all of the three main stages of the photovoltaic effect: absorption of the light, generation of the carriers and finally separation of the carriers. Ferroelectric photovoltaic designs target the last stage with large electric forces from polarized ferroelectric films that can be larger than band gap of the material and the built-in electric fields in semiconductor bipolar junctions. In this project we have fabricated very thin ferroelectric HfO2 films ( 10nm) doped with silicon using RF sputtering method. Doped HfO2 films were capped between two TiN layers ( 20nm) and annealed at temperatures of 800ºC and 1000ºC and Si content was varied between 6-10 mol. % using different size of mounted Si chip on hafnium target. Piezoforce microscopy (PFM) method proved clear ferroelectric properties in samples with 6 mol. % of Si that were annealed at 800ºC. Ferroelectric samples were poled in opposite directions and embedded in the structure of a cell and an enhancement in photovoltaic properties were observed on the poled samples vs unpoled ones with KPFM and I-V measurements. The current work is funded by the NSF EPSCoR LA-SiGMA project under award #EPS-1003897.

Fluorine and oxygen plasma influence on nanoparticle formation and aggregation in metal oxide thin film transistors

NASA Astrophysics Data System (ADS)

MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

2017-03-01

Despite recent advances in metal oxide thin-film transistor technology, there are no foundry processes available yet for large-scale deployment of metal oxide electronics and photonics, in a similar way as found for silicon based electronics and photonics. One of the biggest challenges of the metal oxide platform is the stability of the fabricated devices. Also, there is wide dispersion on the measured specifications of fabricated TFT, from lot-to-lot and from different research groups. This can be partially explained by the importance of the deposition method and its parameters, which determine thin film microstructure and thus its electrical properties. Furthermore, substrate pretreatment is an important factor, as it may act as a template for material growth. Not so often mentioned, plasma processes can also affect the morphology of deposited films on further deposition steps, such as inducing nanoparticle formation, which strongly impact the conduction mechanism in the channel layer of the TFT. In this study, molybdenum doped indium oxide is sputtered onto ALD deposited HfO2 with or without pattering, and etched by RIE chlorine based processing. Nanoparticle formation is observed when photoresist is removed by oxygen plasma ashing. HfO2 etching in CF4/Ar plasma prior to resist stripping in oxygen plasma promotes the aggregation of nanoparticles into nanosized branched structures. Such nanostructuring is absent when oxygen plasma steps are replaced by chemical wet processing with acetone. Finally, in order to understand the electronic transport effect of the nanoparticles on metal oxide thin film transistors, TFT have been fabricated and electrically characterized.

Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching properties

NASA Astrophysics Data System (ADS)

Niu, G.; Schubert, M. A.; Sharath, S. U.; Zaumseil, P.; Vogel, S.; Wenger, C.; Hildebrandt, E.; Bhupathi, S.; Perez, E.; Alff, L.; Lehmann, M.; Schroeder, T.; Niermann, T.

2017-05-01

Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico-chemical properties of oxygen-deficient amorphous HfO2-x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2-x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2-x /TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.

Gas phase carbonyl compounds in ship emissions: Differences between diesel fuel and heavy fuel oil operation

NASA Astrophysics Data System (ADS)

Reda, Ahmed A.; Schnelle-Kreis, J.; Orasche, J.; Abbaszade, G.; Lintelmann, J.; Arteaga-Salas, J. M.; Stengel, B.; Rabe, R.; Harndorf, H.; Sippula, O.; Streibel, T.; Zimmermann, R.

2014-09-01

Gas phase emission samples of carbonyl compounds (CCs) were collected from a research ship diesel engine at Rostock University, Germany. The ship engine was operated using two different types of fuels, heavy fuel oil (HFO) and diesel fuel (DF). Sampling of CCs was performed from diluted exhaust using cartridges and impingers. Both sampling methods involved the derivatization of CCs with 2,4-Dinitrophenylhydrazine (DNPH). The CCs-hydrazone derivatives were analyzed by two analytical techniques: High Performance Liquid Chromatography-Diode Array Detector (HPLC-DAD) and Gas Chromatography-Selective Ion Monitoring-Mass Spectrometry (GC-SIM-MS). Analysis of DNPH cartridges by GC-SIM-MS method has resulted in the identification of 19 CCs in both fuel operations. These CCs include ten aliphatic aldehydes (formaldehyde, acetaldehyde, propanal, isobutanal, butanal, isopentanal, pentanal, hexanal, octanal, nonanal), three unsaturated aldehydes (acrolein, methacrolein, crotonaldehyde), three aromatic aldehyde (benzaldehyde, p-tolualdehyde, m,o-molualdehyde), two ketones (acetone, butanone) and one heterocyclic aldehyde (furfural). In general, all CCs under investigation were detected with higher emission factors in HFO than DF. The total carbonyl emission factor was determined and found to be 6050 and 2300 μg MJ-1 for the operation with HFO and DF respectively. Formaldehyde and acetaldehyde were found to be the dominant carbonyls in the gas phase of ship engine emission. Formaldehyde emissions factor varied from 3500 μg MJ-1 in HFO operation to 1540 μg MJ-1 in DF operation, which is 4-30 times higher than those of other carbonyls. Emission profile contribution of CCs showed also a different pattern between HFO and DF operation. The contribution of formaldehyde was found to be 58% of the emission profile of HFO and about 67% of the emission profile of DF. Acetaldehyde showed opposite behavior with higher contribution of 16% in HFO compared to 11% for DF. Heavier carbonyls (more than two carbon atoms) showed also more contribution in the emission profile of the HFO fuel (26%) than in DF (22%).

Variable angle spectroscopic ellipsometric characterization of HfO2 thin film

NASA Astrophysics Data System (ADS)

Kumar, M.; Kumari, N.; Karar, V.; Sharma, A. L.

2018-02-01

Hafnium Oxide film was deposited on BK7 glass substrate using reactive oxygenated E-Beam deposition technique. The film was deposited using in-situ quartz crystal thickness monitoring to control the film thickness and rate of evaporation. The thin film was grown with a rate of deposition of 0.3 nm/s. The coated substrate was optically characterized using spectrophotometer to determine its transmission spectra. The optical constants as well as film thickness of the hafnia film were extracted by variable angle spectroscopic ellipsometry with Cauchy fitting at incidence angles of 65˚, 70˚ and 75˚.

Laser Damage in Thin Film Optical Coatings

DTIC Science & Technology

1992-07-01

10) using E- beam evaporation and laser tests performed to determine the effect of conditioning laser spot size and coating design on improvement in...1.06 pm) consisting of a 15 layer 3 quarter-wave design (HFO2/SiO 2 and ZrO2/SiO 2) were fabricated by E- beam evaporation. Sol-gel processing was used to... designers select laser damage resistant coatings for optical elements to be employed in military systems using lasers or encountering lasers used as

Atomistic kinetic Monte Carlo study of atomic layer deposition derived from density functional theory.

PubMed

Shirazi, Mahdi; Elliott, Simon D

2014-01-30

To describe the atomic layer deposition (ALD) reactions of HfO2 from Hf(N(CH3)2)4 and H2O, a three-dimensional on-lattice kinetic Monte-Carlo model is developed. In this model, all atomistic reaction pathways in density functional theory (DFT) are implemented as reaction events on the lattice. This contains all steps, from the early stage of adsorption of each ALD precursor, kinetics of the surface protons, interaction between the remaining precursors (steric effect), influence of remaining fragments on adsorption sites (blocking), densification of each ALD precursor, migration of each ALD precursors, and cooperation between the remaining precursors to adsorb H2O (cooperative effect). The essential chemistry of the ALD reactions depends on the local environment at the surface. The coordination number and a neighbor list are used to implement the dependencies. The validity and necessity of the proposed reaction pathways are statistically established at the mesoscale. The formation of one monolayer of precursor fragments is shown at the end of the metal pulse. Adsorption and dissociation of the H2O precursor onto that layer is described, leading to the delivery of oxygen and protons to the surface during the H2O pulse. Through these processes, the remaining precursor fragments desorb from the surface, leaving the surface with bulk-like and OH-terminated HfO2, ready for the next cycle. The migration of the low coordinated remaining precursor fragments is also proposed. This process introduces a slow reordering motion (crawling) at the mesoscale, leading to the smooth and conformal thin film that is characteristic of ALD. Copyright © 2013 Wiley Periodicals, Inc.

Study of bulk Hafnium oxide (HfO2) under compression

NASA Astrophysics Data System (ADS)

Pathak, Santanu; Mandal, Guruprasad; Das, Parnika

2018-04-01

Hafnium oxide (HfO2) is a technologically important material. This material has K-value of 25 and band gap 5.8 eV. A k value of 25-30 is preferred for a gate dielectric [1]. As it shows good insulating and capacitive properties, HfO2 is being considered as a replacement to SiO2 in microelectronic devices as gate dielectrics. On the other hand because of toughening mechanism due to phase transformation induced by stress field observed in these oxides, HFO2 has been a material of investigations in various configurations for a very long time. However the controversies about phase transition of HfO2 under pressure still exists. High quality synchrotron radiation has been used to study the structural phase transition of HfO2 under pressure.

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

NASA Astrophysics Data System (ADS)

Ali, T.; Polakowski, P.; Riedel, S.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Seidel, K.; Löhr, D.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Thrun, X.; Hanisch, N.; Steinke, P.; Calvo, J.; Müller, J.

2018-05-01

The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative. Here, we report more insight into FeFET performance by integrating two types of ferroelectric (FE) materials and varying their properties. By varying the material type [HfO2 (HSO) versus hafnium zirconium oxide (HZO)], optimum content (Si doping/mixture ratio), and film thickness, a material relation to FeFET device physics is concluded. As for the material type, an improved FeFET performance is observed for HZO integration with memory window (MW) comparable to theoretical values. For different Si contents, the HSO based FeFET exhibited a MW trend with different stabilized phases. Similarly, the HZO FeFET shows MW dependence on the Hf:Zr mixture ratio. A maximized MW is obtained with cycle ratios of 16:1 (HfO2:Si) and 1:1 (Hf:Zr) as measured on HSO and HZO based FeFETs, respectively. The thickness variation shows a trend of increasing MW with the increased FE layer thickness confirming early theoretical predictions. The FeFET material aspects and stack physics are discussed with insight into the interplay factors, while optimum FE material parameters are outlined in relation to performance.

Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

NASA Astrophysics Data System (ADS)

Kubo, Toshiharu; Egawa, Takashi

2017-12-01

HfO2/AlGaN/GaN metal-insulator-semiconductor (MIS)-type high electron mobility transistors (HEMTs) on Si substrates were fabricated by atomic layer deposition of HfO2 layers and post-deposition annealing (PDA). The current-voltage characteristics of the MIS-HEMTs with as-deposited HfO2 layers showed a low gate leakage current (I g) despite the relatively low band gap of HfO2, and a dynamic threshold voltage shift (ΔV th) was observed. After PDA above 500 °C, ΔV th was reduced from 2.9 to 0.7 V with an increase in I g from 2.2 × 10-7 to 4.8 × 10-2 mA mm-1. Effects of the PDA on the HfO2 layer and the HfO2/AlGaN interface were investigated by x-ray photoelectron spectroscopy (XPS) using synchrotron radiation. XPS data showed that oxygen vacancies exist in the as-deposited HfO2 layers and they disappeared with an increase in the PDA temperature. These results indicate that the deep electron traps that cause ΔV th are related to the oxygen vacancies in the HfO2 layers.

Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors.

PubMed

Lepadatu, A M; Palade, C; Slav, A; Maraloiu, A V; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, V S; Ciurea, M L

2017-04-28

High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO 2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2 /floating gate of single layer of Ge QDs in HfO 2 /tunnel HfO 2 /p-Si wafers. Both Ge and HfO 2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 10 15 m -2 is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO 2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO 2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO 2 NCs boundaries, while another part of the Ge atoms is present inside the HfO 2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO 2 , distanced from the Si substrate by the tunnel oxide layer with a precise thickness.

Effect of High-Frequency Oscillations on Cough Peak Flows Generated by Mechanical In-Exsufflation in Medically Stable Subjects With Amyotrophic Lateral Sclerosis.

PubMed

Sancho, Jesús; Bures, Enric; de La Asunción, Saray; Servera, Emilio

2016-08-01

Mechanically assisted coughing with mechanical in-exsufflation (MI-E) is recommended for noninvasive management of respiratory secretions in amyotrophic lateral sclerosis (ALS). To improve the effectiveness of the technique, a new device combining MI-E with high-frequency oscillations (HFO) has been developed. This work aimed to assess the effect of HFO on the cough peak flow generated by MI-E in medically stable subjects with ALS. This was a prospective study that included subjects with ALS in a medically stable condition. Cough peak flow generated by MI-E was measured in 4 situations: without HFO, with HFO during insufflation, with HFO during exsufflation, and with HFO in both cycles. The parameters used were: insufflation pressure of +40 cm H2O, exsufflation pressure of -40 cm H2O, insufflation time 2 s, exsufflation time 3 s, amplitude of oscillations 10 cm H2O, and frequency of oscillations 15 Hz. Forty-seven subjects with ALS were included: 66% males, 68.2 ± 9.2 y, 40% with bulbar onset, FVC = 1.7 ± 1.1 L, percent-of-predicted FVC = 54.4 ± 26.6%, cough peak flow = 3.8 ± 2.2 L/s, PImax = -39.4 ± 26.4 cm H2O, revised ALS scale = 28.5 ± 9.3, Norris bulbar subscore = 26.1 ± 10.4. No statistical differences were found in cough peak flow generated by MI-E in the 4 situations (without HFO = 4.0 ± 1.2 L/s, with insufflation HFO = 3.9 ± 1.2 L/s, with exsufflation HFO = 4.1 ± 1.2 L/s, with in-exsufflation HFO = 3.9 ± 1.1 L/s). The addition of HFO to mechanically assisted coughing with MI-E does not have an effect on the cough peak flow of medically stable subjects with ALS. Copyright © 2016 by Daedalus Enterprises.

Direct electron injection into an oxide insulator using a cathode buffer layer

PubMed Central

Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

2015-01-01

Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current–voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼107, and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

NASA Astrophysics Data System (ADS)

Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

2011-10-01

This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer. In comparison to a memory capacitor with a single HfO2 trapping layer, the erase speed of a memory capacitor with a stacked HfO2/Ta2O5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔVFB = 4 V, the device with a stacked HfO2/Ta2O5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO2/Ta2O5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application.

Structure and properties of a model conductive filament/host oxide interface in HfO2-based ReRAM

NASA Astrophysics Data System (ADS)

Padilha, A. C. M.; McKenna, K. P.

2018-04-01

Resistive random-access memory (ReRAM) is a promising class of nonvolatile memory capable of storing information via its resistance state. In the case of hafnium oxide-based devices, experimental evidence shows that a conductive oxygen-deficient filament is formed and broken inside of the device by oxygen migration, leading to switching of its resistance state. However, little is known about the nature of this conductive phase, its interface with the host oxide, or the associated interdiffusion of oxygen, presenting a challenge to understanding the switching mechanism and device properties. To address these problems, we present atomic-scale first-principles simulations of a prototypical conductive phase (HfO), the electronic properties of its interface with HfO2, as well as stability with respect to oxygen diffusion across the interface. We show that the conduction-band offset between HfO and HfO2 is 1.3 eV, smaller than typical electrode-HfO2 band offsets, suggesting that positive charging and band bending should occur at the conductive filament-HfO2 interface. We also show that transfer of oxygen across the interface, from HfO2 into HfO, costs around 1.2 eV per atom and leads to a gradual opening of the HfO band gap, and hence disruption of the electrical conductivity. These results provide invaluable insights into understanding the switching mechanism for HfO2-based ReRAM.

Improved reliability from a plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO2 film on a flexible polyimide substrate.

PubMed

Meena, Jagan Singh; Chu, Min-Ching; Kuo, Shiao-Wei; Chang, Feng-Chih; Ko, Fu-Hsiang

2010-03-20

We have used a sol-gel spin-coating process to fabricate a new metal-insulator-metal (MIM) capacitor comprising a 10 nm-thick high-k thin dielectric HfO(2) film on a flexible polyimide (PI) substrate. The surface morphology of this HfO(2) film was investigated using atomic force microscopy and scanning electron microscopy, which confirmed that continuous and crack-free film growth had occurred on the film surface. After oxygen (O(2)) plasma pretreatment and subsequent annealing at 250 degrees C, the film on the PI substrate exhibited a low leakage current density of 3.64 x 10(-9) A cm(-2) at 5 V and a maximum capacitance density of 10.35 fF microm(-2) at 1 MHz. The as-deposited sol-gel film was completely oxidized when employing O(2) plasma at a relatively low temperature (ca. 250 degrees C), thereby enhancing the electrical performance. We employed X-ray photoelectron spectroscopy (XPS) at both high and low resolution to examine the chemical composition of the film subjected to various treatment conditions. The shift of the XPS peaks towards higher binding energy, revealed that O(2) plasma treatment was the most effective process for the complete oxidation of hafnium atoms at low temperature. A study of the insulator properties indicated the excellent bendability of our MIM capacitor; the flexible PI substrate could be bent up to 10(5) times and folded to near 360 degrees without any deterioration in its electrical performance.

Application of the Tauc-Lorentz formulation to the interband absorption of optical coating materials

NASA Astrophysics Data System (ADS)

von Blanckenhagen, Bernhard; Tonova, Diana; Ullmann, Jens

2002-06-01

Recent progress in ellipsometry instrumentation permits precise measurement and characterization of optical coating materials in the deep-UV wavelength range. Dielectric coating materials exhibit their first electronic interband transition in this spectral range. The Tauc-Lorentz model is a powerful tool with which to parameterize interband absorption above the band edge. The application of this model for the parameterization of the optical absorption of TiO2, Ta2O5, HfO2, Al2O3, and LaF3 thin-film materials is described.

Effect of interfacial SiO2- y layer and defect in HfO2- x film on flat-band voltage of HfO2- x /SiO2- y stacks for backside-illuminated CMOS image sensors

NASA Astrophysics Data System (ADS)

Na, Heedo; Lee, Jimin; Jeong, Juyoung; Kim, Taeho; Sohn, Hyunchul

2018-03-01

In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2- x ) film and the influence of the quality of the SiO2- y interlayer on the nature of flat-band voltage ( V fb) in TiN/HfO/SiO2- y /p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C- V and J- E analyses, the V fb behavior was significantly affected by the characteristics of the SiO2- y interlayer and the non-lattice oxygen fraction in the HfO2- x films. The HfO2- x /native SiO2- y stack presented a V fb of - 1.01 V for HfO2- x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V fb of the HfO2- x /native SiO2- y stack could be controlled from - 1.01 to - 0.56 V by changing the deposition conditions of the HfO2- x film with the native SiO2- y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

Effect of native defects and Co doping on ferromagnetism in HfO2: first-principles calculations.

PubMed

Han, Chong; Yan, Shi-Shen; Lin, Xue-Ling; Hu, Shu-Jun; Zhao, Ming-Wen; Yao, Xin-Xin; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

2011-05-01

First-principles calculations of undoped HfO(2) and cobalt-doped HfO(2) have been carried out to study the magnetic properties of the dielectric material. In contrast to previous reports, it was found that the native defects in HfO(2) could not induce strong ferromagnetism. However, the cobalt substituting hafnium is the most stable defect under oxidation condition, and the ferromagnetic (FM) coupling between the cobalt substitutions is favorable in various configurations. We found that the FM coupling is mediated by the threefold-coordinated oxygen atoms in monoclinic HfO(2) and could be further enhanced in electron-rich condition. Copyright © 2010 Wiley Periodicals, Inc.

Studies on Optical and Electrical Properties of Hafnium Oxide Nanoparticles

NASA Astrophysics Data System (ADS)

Jayaraman, Venkatachalam; Sagadevan, Suresh; Sudhakar, Rajesh

2017-07-01

In this paper, the synthesis and physico-chemical properties of hafnium oxide nanoparticles (HfO2 NPs) are analyzed and reported. The synthesis was carried out by the precipitation route by using hafnium tetrachloride (HfCl4) as precursor material with potassium hydroxide (KOH) dissolved in Millipore water. In the precipitation technique, the chemical reaction is comparatively simple, low-cost and non-toxic compared to other synthetic methods. The synthesized HfO2 NPs were characterized by using powder x-ray diffraction (PXRD), ultraviolet-visible (UV-Vis) spectroscopy, Raman analysis, and high-resolution transmission electron microscopy (HRTEM). The monoclinic structure of the HfO2 NPs was resolved utilizing x-ray diffraction (XRD). The optical properties were studied from the UV-Vis absorption spectrum. The optical band gap of the HfO2NPs was observed to be 5.1 eV. The Raman spectrum shows the presence of HfO2 NPs. The HRTEM image showed that the HfO2 NPs were of spherical shape with an average particle size of around 28 nm. The energy-dispersive x-ray spectroscopy (EDS) spectrum obviously demonstrated the presence of HfO2 NPs. Analysis and studies on the dielectric properties of the HfO2 NPs such as the dielectric constant, the dielectric loss, and alternating current (AC) conductivity were carried out at varying frequencies and temperatures.

Tailoring properties of lossy-mode resonance optical fiber sensors with atomic layer deposition technique

NASA Astrophysics Data System (ADS)

Kosiel, Kamil; Koba, Marcin; Masiewicz, Marcin; Śmietana, Mateusz

2018-06-01

The paper shows application of atomic layer deposition (ALD) technique as a tool for tailoring sensorial properties of lossy-mode-resonance (LMR)-based optical fiber sensors. Hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and tantalum oxide (TaxOy), as high-refractive-index dielectrics that are particularly convenient for LMR-sensor fabrication, were deposited by low-temperature (100 °C) ALD ensuring safe conditions for thermally vulnerable fibers. Applicability of HfO2 and ZrO2 overlays, deposited with ALD-related atomic level thickness accuracy for fabrication of LMR-sensors with controlled sensorial properties was presented. Additionally, for the first time according to our best knowledge, the double-layer overlay composed of two different materials - silicon nitride (SixNy) and TaxOy - is presented for the LMR fiber sensors. The thin films of such overlay were deposited by two different techniques - PECVD (the SixNy) and ALD (the TaxOy). Such approach ensures fast overlay fabrication and at the same time facility for resonant wavelength tuning, yielding devices with satisfactory sensorial properties.

Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

PubMed

Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

2017-05-24

The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

{001} Oriented piezoelectric films prepared by chemical solution deposition on Ni foils

NASA Astrophysics Data System (ADS)

Yeo, Hong Goo; Trolier-McKinstry, Susan

2014-07-01

Flexible metal foil substrates are useful in some microelectromechanical systems applications including wearable piezoelectric sensors or energy harvesters based on Pb(Zr,Ti)O3 (PZT) thin films. Full utilization of the potential of piezoelectrics on metal foils requires control of the film crystallographic texture. In this study, {001} oriented PZT thin films were grown by chemical solution deposition (CSD) on Ni foil and Si substrates. Ni foils were passivated using HfO2 grown by atomic layer deposition in order to suppress substrate oxidation during subsequent thermal treatment. To obtain the desired orientation of PZT film, strongly (100) oriented LaNiO3 films were integrated by CSD on the HfO2 coated substrates. A high level of {001} LaNiO3 and PZT film orientation were confirmed by X-ray diffraction patterns. Before poling, the low field dielectric permittivity and loss tangents of (001) oriented PZT films on Ni are near 780 and 0.04 at 1 kHz; the permittivity drops significantly on poling due to in-plane to out-of-plane domain switching. (001) oriented PZT film on Ni displayed a well-saturated hysteresis loop with a large remanent polarization ˜36 μC/cm2, while (100) oriented PZT on Si showed slanted P-E hysteresis loops with much lower remanent polarizations. The |e31,f| piezoelectric coefficient was around 10.6 C/m2 for hot-poled (001) oriented PZT film on Ni.

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

NASA Astrophysics Data System (ADS)

Maitra, Kingsuk; Frank, Martin M.; Narayanan, Vijay; Misra, Veena; Cartier, Eduard A.

2007-12-01

We report low temperature (40-300 K) electron mobility measurements on aggressively scaled [equivalent oxide thickness (EOT)=1 nm] n-channel metal-oxide-semiconductor field effect transistors (nMOSFETs) with HfO2 gate dielectrics and metal gate electrodes (TiN). A comparison is made with conventional nMOSFETs containing HfO2 with polycrystalline Si (poly-Si) gate electrodes. No substantial change in the temperature acceleration factor is observed when poly-Si is replaced with a metal gate, showing that soft optical phonons are not significantly screened by metal gates. A qualitative argument based on an analogy between remote phonon scattering and high-resolution electron energy-loss spectroscopy (HREELS) is provided to explain the underlying physics of the observed phenomenon. It is also shown that soft optical phonon scattering is strongly damped by thin SiO2 interface layers, such that room temperature electron mobility values at EOT=1 nm become competitive with values measured in nMOSFETs with SiON gate dielectrics used in current high performance processors.

Ligand field splittings in core level transitions for transition metal (TM) oxides: Tanabe-Sugano diagrams and (TM) dangling bonds in vacated O-atom defects

NASA Astrophysics Data System (ADS)

Lucovsky, Gerry; Wu, Kun; Pappas, Brian; Whitten, Jerry

2013-04-01

Defect states in the forbidden band-gap below the conduction band edge are active as electron traps in nano-grain high-) transition metal (TM) oxides with thickness >0.3 nm, e.g., ZrO2 and HfO2. These oxides have received considerable attention as gate-dielectrics in complementary metal oxide semiconductor (CMOS) devices, and more recently are emerging as candidates for charge storage and memory devices. To provide a theoretical basis for device functionality, ab-initio many-electron theory is combined with X-ray absorption spectroscopy (XAS) to study O K edge and TM core level transitions. These studies identify ligand field splittings (ΔLF) for defect state features,. When compared with those obtained from O-atom and TM-atom core spectroscopic transitions, this provides direct information about defect state sun-nm bonding arrangements. comparisons are made for (i) elemental TiO2 and Ti2O3 with different formal ionic charges, Ti4+ and Ti3+ and for (ii) Magneli Phase alloys, TinO2n-1, n is an integer 9>=n>3, and (TiO2)x(HfO2)1-x alloys. The alloys display multi-valent behavior from (i) different ionic-charge states, (ii} local bond-strain, and (iii) metallic hopping transport. The intrinsic bonding defects in TM oxides are identified as pairs of singly occupied dangling bonds. For 6-fold coordinated Ti-oxides defect excited states in 2nd derivative O K pre-edge spectra are essentially the same as single Ti-atom d2 transitions in Tanabe-Sugano (T-S) diagrams. O-vacated site defects in 8-fold coordinated ZrO2 and HfO2 are described by d8 T-S diagrams. T-S defect state ordering and splittings are functions of the coordination and symmetry of vacated site bordering TM atoms. ΔLF values from the analysis of T-S diagrams indicate medium range order (MRO) extending to 3rd and 4th nearest-neighbor (NN) TM-atoms. Values are different for 6-fold Ti, and 8-fold ZrO2 and HfO2, and scale inversely with differences in respective formal ionic radii. O-vacated site bonding defects in TM nano-grain oxides are qualitatively similar to vacant-site defects in non-crystalline SiO2 and GeO2 for ulta-thin films, < 0.2 nm thick, and yield similar performance in MOSCAPs on Ge substrates heralding applications in aggressively-scale CMOS devices.

Oxide-based materials by atomic layer deposition

NASA Astrophysics Data System (ADS)

Godlewski, Marek; Pietruszka, Rafał; Kaszewski, Jarosław; Witkowski, Bartłomiej S.; Gierałtowska, Sylwia; Wachnicki, Łukasz; Godlewski, Michał M.; Slonska, Anna; Gajewski, Zdzisław

2017-02-01

Thin films of wide band-gap oxides grown by Atomic Layer Deposition (ALD) are suitable for a range of applications. Some of these applications will be presented. First of all, ALD-grown high-k HfO2 is used as a gate oxide in the electronic devices. Moreover, ALD-grown oxides can be used in memory devices, in transparent transistors, or as elements of solar cells. Regarding photovoltaics (PV), ALD-grown thin films of Al2O3 are already used as anti-reflection layers. In addition, thin films of ZnO are tested as replacement of ITO in PV devices. New applications in organic photovoltaics, electronics and optoelectronics are also demonstrated Considering new applications, the same layers, as used in electronics, can also find applications in biology, medicine and in a food industry. This is because layers of high-k oxides show antibacterial activity, as discussed in this work.

A study of nitrogen behavior in the formation of Ta/TaN and Ti/TaN alloyed metal electrodes on SiO2 and HfO2 dielectrics

NASA Astrophysics Data System (ADS)

Gassilloud, R.; Maunoury, C.; Leroux, C.; Piallat, F.; Saidi, B.; Martin, F.; Maitrejean, S.

2014-04-01

We studied Ta, TaN, and sub-stoichiometric TaNx electrodes (obtained by nitrogen redistribution in Ta/TaN or Ti/TaN bilayers) deposited on thermal SiO2 and HfO2/IL (0.8 nm SiO2 IL, i.e., interlayer) stacks. Effective work-functions (WF) were extracted on MOS capacitor structures on SiO2 bevelled insulator of 4.2 eV for pure Ta, 4.6 eV for TaN, and 4.3 eV for sub-stoichiometric TaNx. This intermediate WF value is explained by TaN nitrogen redistribution with reactive Ta or Ti elements shifting the gate work-function toward the Si conduction band. The same electrodes deposited on an HfO2/IL dielectric showed different behavior: First, the Ta/HfO2/IL stack shows a +200 meV WF increase (towards the Si valence band) compared to the SiO2 dielectric stack. This increase is explained by the well-known HfO2/IL dipole formation. Second, in contrast to electrodes deposited on SiO2, sub-stoichiometric TaNx/HfO2 is found to have a lower WF (4.3 eV), than pure Ta on HfO2 (4.4 eV). This inversion in work-function behavior measured on SiO2 vs. HfO2 is explained by the nitrogen redistribution in Ta/TaN bilayer together with diffusion of nitrogen through the HfO2 layer, leading to Si-N formation which prevents dipole formation at the HfO2/IL interface.

Synthesis and White-Light Emission of ZnO/HfO2: Eu Nanocables

PubMed Central

2010-01-01

ZnO/HfO2:Eu nanocables were prepared by radio frequency sputtering with electrospun ZnO nanofibers as cores. The well-crystallized ZnO/HfO2:Eu nanocables showed a uniform intact core–shell structure, which consisted of a hexagonal ZnO core and a monoclinic HfO2 shell. The photoluminescence properties of the samples were characterized. A white-light band emission consisted of blue, green, and red emissions was observed in the nanocables. The blue and green emissions can be attributed to the zinc vacancy and oxygen vacancy defects in ZnO/HfO2:Eu nanocables, and the yellow–red emissions are derived from the inner 4f-shell transitions of corresponding Eu3+ ions in HfO2:Eu shells. Enhanced white-light emission was observed in the nanocables. The enhancement of the emission is ascribed to the structural changes after coaxial synthesis. PMID:20730130

Effects of optical design modifications on thermal performance of a highly reflective HfO2/SiO2/TiO2 three material coating

NASA Astrophysics Data System (ADS)

Ocak, M.; Sert, C.; Okutucu-Özyurt, T.

2018-02-01

Effects of layer thickness modifications on laser induced temperature distribution inside three material, highly reflective thin film coatings are studied with numerical simulations. As a base design, a 21 layer coating composed of HfO2, SiO2 and TiO2 layers of quarter wave thickness is considered. First, the laser induced temperature distribution in this base design is obtained. Then the layer thicknesses of the base design are modified and the corresponding temperature distributions in four alternative non-quarter wave coatings are evaluated. The modified thicknesses are determined using an in-house code developed to shift the electric field intensity (EFI) peak from the first high/low layer interface towards the adjacent low index layer that has a higher thermal conductivity, hence, higher laser damage resistance. Meanwhile, the induced increase in the EFI peak is kept at a user defined upper limit. The laser endurance of the base and alternative designs are compared in terms of their estimated temperature distributions. The results indicated that both the peak temperature and the highest interface temperature are decreased by at least 32%, in non-dimensional form, when alternative designs are used instead of the base design. The total reflection of the base design is only decreased from 99.8% to at most 99.4% when alternative designs are used. The study is proved to be successful in improving the laser endurance of three material thin film coatings by lowering the peak and interface temperatures.

Open-lung protective ventilation with pressure control ventilation, high-frequency oscillation, and intratracheal pulmonary ventilation results in similar gas exchange, hemodynamics, and lung mechanics.

PubMed

Sedeek, Khaled A; Takeuchi, Muneyuki; Suchodolski, Klaudiusz; Vargas, Sara O; Shimaoka, Motomu; Schnitzer, Jay J; Kacmarek, Robert M

2003-11-01

Pressure control ventilation (PCV), high-frequency oscillation (HFO), and intratracheal pulmonary ventilation (ITPV) may all be used to provide lung protective ventilation in acute respiratory distress syndrome, but the specific approach that is optimal remains controversial. Saline lavage was used to produce acute respiratory distress syndrome in 21 sheep randomly assigned to receive PCV, HFO, or ITPV as follows: positive end-expiratory pressure (PCV and ITPV) and mean airway pressure (HFO) were set in a pressure-decreasing manner after lung recruitment that achieved a ratio of Pao2/Fio2 > 400 mmHg. Respiratory rates were 30 breaths/min, 120 breaths/min, and 8 Hz, respectively, for PCV, ITPV, and HFO. Eucapnia was targeted with peak carinal pressure of no more than 35 cm H2O. Animals were then ventilated for 4 h. There were no differences among groups in gas exchange, lung mechanics, or hemodynamics. Tidal volume (PCV, 8.9 +/- 2.1 ml/kg; ITPV, 2.7 +/- 0.8 ml/kg; HFO, approximately 2.0 ml/kg) and peak carinal pressure (PCV, 30.6 +/- 2.6 cm H2O; ITPV, 22.3 +/- 4.8 cm H2O; HFO, approximately 24.3 cm H2O) were higher in PCV. Pilot histologic data showed greater interstitial hemorrhage and alveolar septal expansion in PCV than in HFO or ITPV. These data indicate that HFO, ITPV, and PCV when applied with an open-lung protective ventilatory strategy results in the same gas exchange, lung mechanics, and hemodynamic response, but pilot data indicate that lung injury may be greater with PCV.

Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

NASA Astrophysics Data System (ADS)

Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

2018-06-01

Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

Phase Stability and Thermal Conductivity of Composite Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Benkel, Samantha; Zhu, Dongming

2011-01-01

Advanced environmental barrier coatings are being developed to protect SiC/SiC ceramic matrix composites in harsh combustion environments. The current coating development emphasis has been placed on the significantly improved cyclic durability and combustion environment stability in high-heat-flux and high velocity gas turbine engine environments. Environmental barrier coating systems based on hafnia (HfO2) and ytterbium silicate, HfO2-Si nano-composite bond coat systems have been processed and their stability and thermal conductivity behavior have been evaluated in simulated turbine environments. The incorporation of Silicon Carbide Nanotubes (SiCNT) into high stability (HfO2) and/or HfO2-silicon composite bond coats, along with ZrO2, HfO2 and rare earth silicate composite top coat systems, showed promise as excellent environmental barriers to protect the SiC/SiC ceramic matrix composites.

A liquid metal reaction environment for the room-temperature synthesis of atomically thin metal oxides

NASA Astrophysics Data System (ADS)

Zavabeti, Ali; Ou, Jian Zhen; Carey, Benjamin J.; Syed, Nitu; Orrell-Trigg, Rebecca; Mayes, Edwin L. H.; Xu, Chenglong; Kavehei, Omid; O'Mullane, Anthony P.; Kaner, Richard B.; Kalantar-zadeh, Kourosh; Daeneke, Torben

2017-10-01

Two-dimensional (2D) oxides have a wide variety of applications in electronics and other technologies. However, many oxides are not easy to synthesize as 2D materials through conventional methods. We used nontoxic eutectic gallium-based alloys as a reaction solvent and co-alloyed desired metals into the melt. On the basis of thermodynamic considerations, we predicted the composition of the self-limiting interfacial oxide. We isolated the surface oxide as a 2D layer, either on substrates or in suspension. This enabled us to produce extremely thin subnanometer layers of HfO2, Al2O3, and Gd2O3. The liquid metal-based reaction route can be used to create 2D materials that were previously inaccessible with preexisting methods. The work introduces room-temperature liquid metals as a reaction environment for the synthesis of oxide nanomaterials with low dimensionality.

First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface

NASA Astrophysics Data System (ADS)

Takagi, Kensuke; Ono, Tomoya

2018-06-01

The relationship between the position of oxygen vacancies in HfO2/SiO2/Si gate stacks and the leakage current is studied by first-principles electronic-structure and electron-conduction calculations. We find that the increase in the leakage current due to the creation of oxygen vacancies in the HfO2 layer is much larger than that in the SiO2 interlayer. According to previous first-principles total energy calculations, the formation energy of oxygen vacancies is smaller in the SiO2 interlayer than that in the HfO2 layer under the same conditions. Therefore, oxygen vacancies will be attracted from the SiO2 interlayer to minimize the energy, thermodynamically justifying the scavenging technique. Thus, the scavenging process efficiently improves the dielectric constant of HfO2-based gate stacks without increasing the number of oxygen vacancies, which cause the dielectric breakdown.

Fabrication and characterization of high-K dielectric integrated silicon nanowire sensor for DNA sensing application (Conference Presentation)

NASA Astrophysics Data System (ADS)

Jayakumar, Ganesh; Legallais, Maxime; Hellström, Per-Erik; Mouis, Mireille; Stambouli, Valérie; Ternon, Céline; Östling, Mikael

2016-09-01

1D silicon nanowires (SiNW) are attractive for charge based DNA sensing applications due to their small size and large surface to volume ratio. An ideal portable biosensor is expected to have repeatable and reliable sensitivity, selectivity, low production cost and small feature size. Instead of using tools such as e-beam that are capital and time intensive, we propose a low cost CMOS self-aligned-double-patterning I-line lithography process to fabricate 60 nm wide SiNW. DNA probes are grafted on a thin dielectric layer that is deposited on top of the SiNW surface. Here we used HfO2 instead of the usual SiO2. Indeed, compared to SiO2, HfO2 has been reported to have higher amount of OH groups on its surface leading to enhanced signal quality. We also report preliminary biosensor characterizations. After HfO2 functionalization and single-stranded DNA probe grafting onto the SiNWs, the sensors were first put in contact with fluorophore labelled complementary DNA targets in order to test the efficiency of DNA hybridization optically. Then, a sequence of hybridization, de-hybridization and re-hybridization steps was followed by Id-Vg measurements in order to measure the electrical response of the sensors to target DNA as well as recycling capability. After each step, SiNW devices exhibited a threshold voltage shift larger than device-to-device dispersion, showing that both complementary DNA hybridization and de-hybridization can be electrically detected. These results are very encouraging as they open new frontiers for heterogeneous integration of liquid interacting array of nano sensors with CMOS circuits to fabricate a complete lab on chip.

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

NASA Astrophysics Data System (ADS)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Analysis of thermal stresses in HfO2/SiO2 high reflective optical coatings for high power laser applications

NASA Astrophysics Data System (ADS)

Gao, Chunxue; Zhao, Zhiwei; Zhu, Zhuoya; Li, Shuang; Mi, Changwen

2015-02-01

HfO2/SiO2 high reflective optical coatings are widely used in high power laser applications because of their high laser damage resistance and appropriate spectral performance. The residual stresses strongly influence the performance and longevity of the optical coatings. Thermal stresses are the primary components of the residual stresses. In the present work, the distribution of thermal stresses in HfO2/SiO2 high reflective optical coatings was investigated using two different computational methods: finite element method (FEM) and an analytical method based on force and moment balances and classical beam bending theory. The results by these two methods were compared and found to be in agreement with each other, demonstrating that these two methods are effective and accurate ways to predict the thermal stresses in HfO2/SiO2 optical coatings. In addition, these two methods were also used to obtain the thermal stresses in HfO2/SiO2 optical coatings with different layer number to investigate the effect of the layer number on the thermal stresses of the HfO2/SiO2 optical coatings. The results show that with the increase of the layer number, the stresses in the substrate increase, while the stresses in the respective SiO2 and HfO2 layers decrease. Besides, it was also found that the radius of curvature of the coating system decreases as the layer number increases, leading to larger bending curvature in the system.

Magnetic properties of epitaxial hexagonal HoFeO3 thin films

NASA Astrophysics Data System (ADS)

Wang, Xiao; Xiao, Zhuyun; Xu, Xiaoshan; Wang, Wenbin; Keavney, David; Liu, Yaohua; Cheng, X. M.

2014-03-01

Multiferroic materials exhibit multiple ferroic orders simultaneously and thus have great potential applications in information technology, sensing and actuation. Epitaxial hexagonal HoFeO3 (h-HFO) films are very promising candidates as multiferroic materials with room temperature ferromagnetism, because magnetic Ho3+ ions are expected to have stronger exchange interactions with Fe3+ ions than the well-studied h-LuFeO3 films. We report study of magnetic properties of epitaxial h-HFO thin films deposited using laser molecular beam epitaxy on Yttria-stabilized zirconia (YSZ) substrates. X-ray diffraction measurements confirmed the epitaxial registry and six-fold symmetry of the film. Temperature dependence of magnetization of the film measured by a Quantum Design SQUID magnetometer shows dominating paramagnetic characteristic. Element specific x-ray magnetic circular dichroism measurements performed at beamline 4-ID-C of the Advanced Photon Source show a ferromagnetic ordering of Fe and an exchange coupling between Ho3+ and Fe3+ ions. Work at BMC is supported by NSF Career award (DMR 1053854). Work at ANL is supported by US-DOE, Office of Science, BES (No. DE-AC02-06CH11357).

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

PubMed Central

Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

2016-01-01

The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer. PMID:26861833

Thermal Conductivity and Water Vapor Stability of Ceramic HfO2-Based Coating Materials

NASA Technical Reports Server (NTRS)

Zhu, Dong-Ming; Fox, Dennis S.; Bansal, Narottam P.; Miller, Robert A.

2004-01-01

HfO2-Y2O3 and La2Zr2O7 are candidate thermal/environmental barrier coating materials for gas turbine ceramic matrix composite (CMC) combustor liner applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature phase stability of plasma-sprayed coatings and/or hot-pressed HfO2-5mol%Y2O3, HfO2-15mol%Y2O3 and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasma-sprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC Hexoloy or CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications will also be discussed.

Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2 Atomic Layer Deposition.

PubMed

Daubert, James S; Hill, Grant T; Gotsch, Hannah N; Gremaud, Antoine P; Ovental, Jennifer S; Williams, Philip S; Oldham, Christopher J; Parsons, Gregory N

2017-02-01

Atomic layer deposition (ALD) is a viable means to add corrosion protection to copper metal. Ultrathin films of Al 2 O 3 , TiO 2 , ZnO, HfO 2 , and ZrO 2 were deposited on copper metal using ALD, and their corrosion protection properties were measured using electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV). Analysis of ∼50 nm thick films of each metal oxide demonstrated low electrochemical porosity and provided enhanced corrosion protection from aqueous NaCl solution. The surface pretreatment and roughness was found to affect the extent of the corrosion protection. Films of Al 2 O 3 or HfO 2 provided the highest level of initial corrosion protection, but films of HfO 2 exhibited the best coating quality after extended exposure. This is the first reported instance of using ultrathin films of HfO 2 or ZrO 2 produced with ALD for corrosion protection, and both are promising materials for corrosion protection.

The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics

NASA Astrophysics Data System (ADS)

Wang, Ruo Zheng; Wu, Sheng Li; Li, Xin Yu; Zhang, Jin Tao

2017-07-01

In this study, we set out to fabricate an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with SiNx/HfO2/SiNx (SHS) sandwiched dielectrics. The J-V and C-V of this SHS film were extracted by the Au/p-Si/SHS/Ti structure. At room temperature the a-IGZO with SHS dielectrics showed the following electrical properties: a threshold voltage of 2.9 V, a subthreshold slope of 0.35 V/decade, an on/off current ratio of 3.5 × 107, and a mobility of 12.8 cm2 V-1 s-1. Finally, we tested the influence of gate bias stress on the TFT, and the result showed that the threshold voltage shifted to a positive voltage when applying a positive gate voltage to the TFT.

Hafnia-based resistive switching devices for non-volatile memory applications and effects of gamma irradiation on device performance

NASA Astrophysics Data System (ADS)

Arun, N.; Kumar, K. Vinod; Pathak, A. P.; Avasthi, D. K.; Nageswara Rao, S. V. S.

2018-04-01

Non-volatile memory (NVM) devices were fabricated as a Metal- Insulator-Metal (MIM) structures by sandwiching Hafnium dioxide (HfO2) thin film in between two metal electrodes. The top and bottom metal electrodes were deposited by using the thermal evaporation, and the oxide layer was deposited by using the RF magnetron sputtering technique. The Resistive Random Access Memory (RRAM) device structures such as Ag/HfO2/Au/Si were fabricated and I-V characteristics for the pristine and gamma-irradiated devices with a dose 24 kGy were measured. Further we have studied the thermal annealing effects, in the range of 100°-400°C in a tubular furnace for the HfO2/Au/Si samples. The X-ray diffraction (XRD), Rutherford Backscattering Spectrometry (RBS), field emission-scanning electron microscopy (FESEM) analysis measurements were performed to determine the thickness, crystallinity and stoichiometry of these films. The electrical characteristics such as resistive switching, endurance, retention time and switching speed were measured by a semiconductor device analyser. The effects of gamma irradiation on the switching properties of these RRAM devices have been studied.

Evaluation of thermal stability in spectrally selective few-layer metallo-dielectric structures for solar thermophotovoltaics

NASA Astrophysics Data System (ADS)

Shimizu, Makoto; Kohiyama, Asaka; Yugami, Hiroo

2018-06-01

The thermal stability of spectrally selective few-layer metallo-dielectric structures is evaluated to analyze their potential as absorber and emitter materials in solar thermophotovoltaic (STPV) systems. High-efficiency (e.g., STPV) systems require materials with spectrally selective properties, especially at high temperatures (>1273 K). Aiming to develop such materials for high-temperature applications, we propose a few-layer structure composed of a refractory metal (i.e., Mo) nanometric film sandwiched between the layers of a dielectric material (i.e., hafnium oxide, HfO2) deposited on a Mo bulk substrate. In vacuum conditions (<5 × 10-2 Pa), the few-layer structure shows thermal stability at 1423 K for at least 1 h. At 1473 K, the spectral selectivity was degraded. This could have been caused by the oxidation of the Mo thin film by the residual oxygen through the grain boundaries of the upper HfO2 layer. This experiment showed the potential stability of few-layer structures for applications working at temperatures greater than 1273 K as well as the degradation mechanism of the few-layer structure. This characteristic is expected to help improve the thermal stability in few-layer structures further.

Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Ferrari, S.; Scarel, G.; Wiemer, C.; Fanciulli, M.

2002-12-01

Atomic layer deposition (ALD) growth of high-κ dielectric films (ZrO2 and HfO2) was performed using ZrCl4, HfCl4, and H2O as precursors. In this work, we use time of flight secondary ion mass spectrometry to investigate the chlorine distribution in ALD grown ZrO2 and HfO2 films, and its evolution during rapid thermal processes in nitrogen atmosphere. Chlorine outdiffusion is found to depend strongly upon annealing temperature and weakly upon the annealing time. While in ZrO2 chlorine concentration is significantly decreased already at 900 °C, in HfO2 it is extremely stable, even at temperatures as high as 1050 °C.

Localization of beta and high-frequency oscillations within the subthalamic nucleus region.

PubMed

van Wijk, B C M; Pogosyan, A; Hariz, M I; Akram, H; Foltynie, T; Limousin, P; Horn, A; Ewert, S; Brown, P; Litvak, V

2017-01-01

Parkinsonian bradykinesia and rigidity are typically associated with excessive beta band oscillations in the subthalamic nucleus. Recently another spectral peak has been identified that might be implicated in the pathophysiology of the disease: high-frequency oscillations (HFO) within the 150-400 Hz range. Beta-HFO phase-amplitude coupling (PAC) has been found to correlate with severity of motor impairment. However, the neuronal origin of HFO and its usefulness as a potential target for deep brain stimulation remain to be established. For example, it is unclear whether HFO arise from the same neural populations as beta oscillations. We intraoperatively recorded local field potentials from the subthalamic nucleus while advancing DBS electrodes in 2 mm steps from 4 mm above the surgical target point until 2 mm below, resulting in 4 recording sites. Data from 26 nuclei from 14 patients were analysed. For each trajectory, we identified the recording site with the largest spectral peak in the beta range (13-30 Hz), and the largest peak in the HFO range separately. In addition, we identified the recording site with the largest beta-HFO PAC. Recording sites with largest beta power and largest HFO power coincided in 50% of cases. In the other 50%, HFO was more likely to be detected at a more superior recording site in the target area. PAC followed more closely the site with largest HFO (45%) than beta power (27%). HFO are likely to arise from spatially close, but slightly more superior neural populations than beta oscillations. Further work is necessary to determine whether the different activities can help fine-tune deep brain stimulation targeting.

Memristor and selector devices fabricated from HfO2-xNx

NASA Astrophysics Data System (ADS)

Murdoch, B. J.; McCulloch, D. G.; Ganesan, R.; McKenzie, D. R.; Bilek, M. M. M.; Partridge, J. G.

2016-04-01

Monoclinic HfO2-xNx has been incorporated into two-terminal devices exhibiting either memristor or selector operation depending on the controlled inclusion/suppression of mobile oxygen vacancies. In HfO2 memristors containing oxygen vacancies, gradual conductance modulation, short-term plasticity, and long-term potentiation were observed using appropriate voltage-spike stimulation, suggesting suitability for artificial neural networks. Passivation of oxygen vacancies, confirmed by X-ray absorption spectroscopy, was achieved in HfO2-xNx films by the addition of nitrogen during growth. Selector devices formed on these films exhibited threshold switching and current controlled negative differential resistance consistent with thermally driven insulator to metal transitions.

Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal-oxide-semiconductor devices

NASA Astrophysics Data System (ADS)

Pandey, R. K.; Sathiyanarayanan, Rajesh; Kwon, Unoh; Narayanan, Vijay; Murali, K. V. R. M.

2013-07-01

We investigate the physical properties of a portion of the gate stack of an ultra-scaled complementary metal-oxide-semiconductor (CMOS) device. The effects of point defects, such as oxygen vacancy, oxygen, and aluminum interstitials at the HfO2/TiN interface, on the effective work function of TiN are explored using density functional theory. We compute the diffusion barriers of such point defects in the bulk TiN and across the HfO2/TiN interface. Diffusion of these point defects across the HfO2/TiN interface occurs during the device integration process. This results in variation of the effective work function and hence in the threshold voltage variation in the devices. Further, we simulate the effects of varying the HfO2/TiN interface stoichiometry on the effective work function modulation in these extremely-scaled CMOS devices. Our results show that the interface rich in nitrogen gives higher effective work function, whereas the interface rich in titanium gives lower effective work function, compared to a stoichiometric HfO2/TiN interface. This theoretical prediction is confirmed by the experiment, demonstrating over 700 meV modulation in the effective work function.

Nanocomposites of polyimide and mixed oxide nanoparticles for high performance nanohybrid gate dielectrics in flexible thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Ju Hyun; Hwang, Byeong-Ung; Kim, Do-Il; Kim, Jin Soo; Seol, Young Gug; Kim, Tae Woong; Lee, Nae-Eung

2017-05-01

Organic gate dielectrics in thin film transistors (TFTs) for flexible display have advantages of high flexibility yet have the disadvantage of low dielectric constant (low- k). To supplement low- k characteristics of organic gate dielectrics, an organic/inorganic nanocomposite insulator loaded with high- k inorganic oxide nanoparticles (NPs) has been investigated but high loading of high- k NPs in polymer matrix is essential. Herein, compositing of over-coated polyimide (PI) on self-assembled (SA) layer of mixed HfO2 and ZrO2 NPs as inorganic fillers was used to make dielectric constant higher and leakage characteristics lower. A flexible TFT with lower the threshold voltage and high current on/off ratio could be fabricated by using the hybrid gate dielectric structure of the nanocomposite with SA layer of mixed NPs on ultrathin atomic-layer deposited Al2O3. [Figure not available: see fulltext.

Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric.

PubMed

Xu, Jingping; Wen, Ming; Zhao, Xinyuan; Liu, Lu; Song, Xingjuan; Lai, Pui-To; Tang, Wing-Man

2018-08-24

The carrier mobility of MoS 2 transistors can be greatly improved by the screening role of high-k gate dielectric. In this work, atomic-layer deposited (ALD) HfO 2 annealed in NH 3 is used to replace SiO 2 as the gate dielectric to fabricate back-gated few-layered MoS 2 transistors, and good electrical properties are achieved with field-effect mobility (μ) of 19.1 cm 2 V -1 s -1 , subthreshold swing (SS) of 123.6 mV dec -1 and on/off ratio of 3.76 × 10 5 . Furthermore, enhanced device performance is obtained when the surface of the MoS 2 channel is coated by an ALD HfO 2 layer with different thicknesses (10, 15 and 20 nm), where the transistor with a 15 nm HfO 2 encapsulation layer exhibits the best overall electrical properties: μ = 42.1 cm 2 V -1 s -1 , SS = 87.9 mV dec -1 and on/off ratio of 2.72 × 10 6 . These improvements should be associated with the enhanced screening effect on charged-impurity scattering and protection from absorption of environmental gas molecules by the high-k encapsulation. The capacitance equivalent thickness of the back-gate dielectric (HfO 2 ) is only 6.58 nm, which is conducive to scaling of the MoS 2 transistors.

SIMS study of oxygen diffusion in monoclinic HfO2

NASA Astrophysics Data System (ADS)

Mueller, Michael P.; De Souza, Roger A.

2018-01-01

The diffusion of oxygen in dense ceramics of monoclinic HfO2 was studied by means of (18O/16O) isotope exchange annealing and subsequent determination of isotope depth profiles by Secondary Ion Mass Spectrometry. Anneals were performed in the temperature range of 573 ≤T /K ≤ 973 at an oxygen partial pressure of p O2=200 mbar . All measured isotope profiles exhibited two features: the first feature, closer to the surface, was attributed mainly to slow oxygen diffusion in an impurity silicate phase; the second feature, deeper in the sample, was attributed to oxygen diffusion in bulk monoclinic HfO2 . The activation enthalpy of oxygen tracer diffusion in bulk HfO2 was found to be ΔHD∗≈0.5 eV .

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

NASA Astrophysics Data System (ADS)

Li, Xue-Fei; Liu, Xiao-Jie; Cao, Yan-Qiang; Li, Ai-Dong; Li, Hui; Wu, Di

2013-01-01

We report the characteristics of HfO2 films deposited on Ge substrates with and without La2O3 passivation at 250 °C by atomic layer deposition (ALD) using La[N(SiMe3)2]3 and Hf[N(CH3)(C2H5)]4 as the precursors. The HfO2 is observed to form defective HfGeOx at its interface during 500 °C postdeposition annealing. The insertion of an ultrathin La2O3 interfacial passivation layer effectively prevents the Ge outdiffusion and improves interfacial and electrical properties. Capacitance equivalent thickness (CET) of 1.35 nm with leakage current density JA of 8.3 × 10-4 A/cm2 at Vg = 1 V is achieved for the HfO2/La2O3 gate stacks on Ge substrates.

Characteristics of high-k gate dielectric formed by the oxidation of sputtered Hf/Zr/Hf thin films on the Si substrate

NASA Astrophysics Data System (ADS)

Kim, H. D.; Roh, Y.; Lee, J. E.; Kang, H.-B.; Yang, C.-W.; Lee, N.-E.

2004-07-01

We have investigated the effects of high temperature annealing on the physical and electrical properties of multilayered high-k gate oxide [HfSixOy/HfO2/intermixed-layer(IL)/ZrO2/intermixed-layer(IL)/HfO2] in metal-oxide-semiconductor device. The multilayered high-k films were formed after oxidizing the Hf/Zr/Hf films deposited directly on the Si substrate. The subsequent N2 annealing at high temperature (>= 700 °C) not only results in the polycrystallization of the multilayered high-k films, but also causes the diffusion of Zr. The latter transforms the HfSixOy/HfO2/IL/ZrO2/IL/HfO2 film into the Zr-doped HfO2 film, and improves electrical properties in general. However, the thin SiOx interfacial layer starts to form if annealing temperature increases over 700 °C, deteriorating the equivalent oxide thickness. .

Finite element analysis of hollow out-of-plane HfO2 microneedles for transdermal drug delivery applications.

PubMed

Zhang, Yong-Hua; A Campbell, Stephen; Karthikeyan, Sreejith

2018-02-17

Transdermal drug delivery (TDD) based on microneedles is an excellent approach due to its advantages of both traditional transdermal patch and hypodermic syringes. In this paper, the fabrication method of hollow out-of-layer hafnium oxide (HfO 2 ) microneedles mainly based on deep reactive ion etching of silicon and atomic layer deposition of HfO 2  is described, and the finite element analysis of the microneedles based on ANSYS software is also presented. The fabrication process is simplified by using a single mask. The finite element analysis of a single microneedle shows that the flexibility of the microneedles can be easily adjusted for various applications. The finite element analysis of a 3 × 3 HfO 2 microneedle array applied on the skin well explains the "bed of nail" effect, i.e., the skin is not liable to be pierced when the density of microneedles in array increases. The presented research work here provides useful information for design optimization of HfO 2 microneedles used for TDD applications.

Influence of nitrogen-related defects on optical and electrical behaviour in HfO2-xNx deposited by high-power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Murdoch, B. J.; Ganesan, R.; McKenzie, D. R.; Bilek, M. M. M.; McCulloch, D. G.; Partridge, J. G.

2015-09-01

HfO2-xNx films have been deposited by high-power impulse magnetron sputtering in an Ar-O2-N2 atmosphere with a series of nitrogen partial pressures. X-ray absorption spectroscopy revealed the optimum deposition conditions required to passivate O vacancies in the HfO2-xNx films by nitrogen. Low-mobility interstitial species prevent crystallisation of nitrogen-incorporated films. These effects combine to remove leakage paths resulting in superior breakdown strengths compared to films deposited without nitrogen. The bandgap was maintained at ˜5.9 eV in the films in which nitrogen passivated the oxygen vacancies. This is essential to provide sufficient band offsets for HfO2-xNx films to be used an effective gate dielectric.

Damage evaluation in graphene underlying atomic layer deposition dielectrics

PubMed Central

Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A.

2015-01-01

Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors. PMID:26311131

OH Radical Reaction Rate Coefficients, Infrared Spectrum, and Global Warming Potential of (CF3)2CFCH═CHF (HFO-1438ezy(E)).

PubMed

Papadimitriou, Vassileios C; Burkholder, James B

2016-08-25

Rate coefficients, k(T), for the OH radical + (E)-(CF3)2CFCH═CHF ((E)-1,3,4,4,4-pentafluoro-3-(trifluoromethyl)-1-butene, HFO-1438ezy(E)) gas-phase reaction were measured using pulsed laser photolysis-laser-induced fluorescence (PLP-LIF) between 214 and 380 K and 50 and 450 Torr (He or N2 bath gas) and with a relative rate method at 296 K between 100 and 400 Torr (synthetic air). Over the range of pressures included in this study, no pressure dependence in k(T) was observed. k(296 K) obtained using the two techniques agreed to within ∼3% with (3.26 ± 0.26) × 10(-13) cm(3) molecule(-1) s(-1) (2σ absolute uncertainty) obtained using the PLP-LIF technique. k(T) displayed non-Arrhenius behavior that is reproduced by (7.34 ± 0.30) × 10(-19)T(2) exp[(481 ± 10)/T) cm(3) molecule(-1) s(-1). With respect to OH reactive loss, the atmospheric lifetime of HFO-1438ezy(E) is estimated to be ∼36 days and HFO-1438ezy(E) is considered a very short-lived substance (VSLS) (the actual lifetime will depend on the time and location of the HFO-1438ezy(E) emission). On the basis of the HFO-1438ezy(E) infrared absorption spectrum measured in this work and its estimated lifetime, a radiative efficiency of 0.306 W m(-2) ppb(-1) (well-mixed gas) was calculated and its 100-year time-horizon global warming potential, GWP100, was estimated to be 8.6. CF3CFO, HC(O)F, and CF2O were identified using infrared spectroscopy as stable end products in the oxidation of HFO-1438ezy(E) in the presence of O2. Two additional fluorinated products were observed and theoretical calculations of the infrared spectra of likely degradation products are presented. The photochemical ozone creation potential of HFO-1438ezy(E) was estimated to be ∼2.15.

Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

NASA Astrophysics Data System (ADS)

Yuan, Lei; Zhang, Hongpeng; Jia, Renxu; Guo, Lixin; Zhang, Yimen; Zhang, Yuming

2018-03-01

Energy band alignments between series band of Al-rich high-k materials (HfO2)x(Al2O3)1-x and β-Ga2O3 are investigated using X-Ray Photoelectron Spectroscopy (XPS). The results exhibit sufficient conduction band offsets (1.42-1.53 eV) in (HfO2)x(Al2O3)1-x/β-Ga2O3. In addition, it is also obtained that the value of Eg, △Ec, and △Ev for (HfO2)x(Al2O3)1-x/β-Ga2O3 change linearly with x, which can be expressed by 6.98-1.27x, 1.65-0.56x, and 0.48-0.70x, respectively. The higher dielectric constant and higher effective breakdown electric field of (HfO2)x(Al2O3)1-x compared with Al2O3, coupled with sufficient barrier height and lower gate leakage makes it a potential dielectric for high voltage β-Ga2O3 power MOSFET, and also provokes interest in further investigation of HfAlO/β-Ga2O3 interface properties.

Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

PubMed

He, Weifan; Sun, Huajun; Zhou, Yaxiong; Lu, Ke; Xue, Kanhao; Miao, Xiangshui

2017-08-30

The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO 2-x , given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO 2-x material have not been studied. Here we report Pt/HfO 2-x /Ti memristors with double memristive modes, forming-free and low operation voltage, which were tuned by oxidation conditions of HfO 2-x films. As O/Hf ratios of HfO 2-x films increase, the forming voltages, SET voltages, and R off /R on windows increase regularly while their resistive transitions undergo from gradually to sharply in I/V sweep. Two memristors with typical resistive transitions were studied to customize binary and multi-level memristive modes, respectively. For binary mode, high-speed switching with 10 3 pulses (10 ns) and retention test at 85 °C (>10 4 s) were achieved. For multi-level mode, the 12-levels stable resistance states were confirmed by ongoing multi-window switching (ranging from 10 ns to 1 μs and completing 10 cycles of each pulse). Our customized binary and multi-level HfO 2-x -based memristors show high-speed switching, multi-level storage and excellent stability, which can be separately applied to logic computing and neuromorphic computing, further suitable for in-memory computing chip when deposition atmosphere may be fine-tuned.

Serotonergic hallucinogens differentially modify gamma and high frequency oscillations in the rat nucleus accumbens.

PubMed

Goda, Sailaja A; Piasecka, Joanna; Olszewski, Maciej; Kasicki, Stefan; Hunt, Mark J

2013-07-01

The nucleus accumbens (NAc) is a site critical for the actions of many drugs of abuse. Psychoactive compounds, such as N-methyl-D-aspartate receptor (NMDAR) antagonists, modify gamma (40-90) and high frequency oscillations (HFO, 130-180 Hz) in local field potentials (LFPs) recorded in the NAc. Lysergic acid diethylamide (LSD) and 2,5-dimethoxy-4-iodoamphetamine (DOI) are serotonergic hallucinogens and activation of 5HT2A receptors likely underlies their hallucinogenic effects. Whether these compounds can also modulate LFP oscillations in the NAc is unclear. This study aims to examine the effect of serotonergic hallucinogens on gamma and HFO recorded in the NAc and to test whether 5HT2A receptors mediate the effects observed. LFPs were recorded from the NAc of freely moving rats. Drugs were administered intraperitoneally. LSD (0.03-0.3 mg/kg) and DOI (0.5-2.0 mg/kg) increased the power and reduced the frequency of HFO. In contrast, the hallucinogens produced a robust reduction in the power of low (40-60 Hz), but not high gamma oscillations (70-90 Hz). MDL 11939 (1.0 mg/kg), a 5HT2A receptor antagonist, fully reversed the changes induced by DOI on HFO but only partially for the low gamma band. Equivalent increases in HFO power were observed after TCB-2 (5HT2A receptor agonist, 0.1-1.5 mg/kg), but not CP 809101 (5H2C receptor agonist, 0.1-3 mg/kg). Notably, hallucinogen-induced increases in HFO power were smaller than those produced by ketamine (25 mg/kg). Serotonergic hallucinogen-induced changes in HFO and gamma are mediated, at least in part, by stimulation of 5HT2A receptors. Comparison of the oscillatory changes produced by serotonergic hallucinogens and NMDAR antagonists are also discussed.

77 FR 16988 - Protection of Stratospheric Ozone: Amendment to HFO-1234yf SNAP Rule for Motor Vehicle Air...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-03-23

... Protection of Stratospheric Ozone: Amendment to HFO-1234yf SNAP Rule for Motor Vehicle Air Conditioning... hydrofluoroolefin (HFO)-1234yf (2,3,3,3-tetrafluoroprop-1-ene), a substitute for ozone- depleting substances (ODSs... EPA's Stratospheric Ozone Web site at http://www.epa.gov/ozone/snap/regs . The full list of SNAP...

Effects of proton irradiation on thin-film materials for optical filters

NASA Astrophysics Data System (ADS)

Scaglione, Salvatore; Piegari, Angela; Sytchkova, Anna; Jakšić, Milko

2017-11-01

The behaviour of interference optical filters for space applications has been investigated under low energy proton irradiation. In order to understand the behaviour of the interference coating subjected to proton irradiation, the interaction of protons with coating and substrate was simulated by the SRIM code. A beam of protons of 60 KeV with an integrated fluence of 1013 p+/cm2 was used. The spectral transmittances of fused silica, TiO2 and HfO2 single layers and interference coatings were measured before and after irradiation and, according to simulations, no significant effects were detected in the visible-near infrared spectrum, while some variations appeared at shorter wavelengths.

Next-generation all-silica coatings for UV applications

NASA Astrophysics Data System (ADS)

Melninkaitis, A.; Grinevičiūtė, L.; Abromavičius, G.; Mažulė, L.; Smalakys, L.; Pupka, E.; Š čiuka, M.; Buzelis, R.; Kičas, S.

2017-11-01

Band-gap and refractive index are known as fundamental properties determining intrinsic optical resistance of multilayer dielectric coatings. By considering this fact we propose novel approach to manufacturing of interference thin films, based on artificial nano-structures of modulated porosity embedded in high band-gap matrix. Next generation all-silica mirrors were prepared by GLancing Angle Deposition (GLAD) using electron beam evaporation. High reflectivity (HR) was achieved by tailoring the porosity of highly resistant silica material during the thin film deposition process. Furthermore, the proposed approach was also demonstrated to work well in case of anti-reflection (AR) coatings. Conventional HR HfO2 and SiO2 as well as AR Al2O3 and SiO2 multilayers produced by Ion Beam Sputtering (IBS) were used as reference coatings. Damage performance of experimental coatings was also analyzed. All-silica based GLAD approach resulted in significant improvement of intrinsic laser damage resistance properties if compared to conventional coatings. Besides laser damage testing, other characteristics of experimental coatings are analyzed and discussed - reflectance, surface roughness and optical scattering. We believe that reported concept can be expanded to virtually any design of thin film coatings thus opening a new way of next generation highly resistant thin films well suited for high power and UV laser applications.

A low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistor

NASA Astrophysics Data System (ADS)

Han, C. Y.; Qian, L. X.; Leung, C. H.; Che, C. M.; Lai, P. T.

2013-07-01

By including the generation-recombination process of charge carriers in conduction channel, a model for low-frequency noise in pentacene organic thin-film transistors (OTFTs) is proposed. In this model, the slope and magnitude of power spectral density for low-frequency noise are related to the traps in the gate dielectric and accumulation layer of the OTFT for the first time. The model can well fit the measured low-frequency noise data of pentacene OTFTs with HfO2 or HfLaO gate dielectric, which validates this model, thus providing an estimate on the densities of traps in the gate dielectric and accumulation layer. It is revealed that the traps in the accumulation layer are much more than those in the gate dielectric, and so dominate the low-frequency noise of pentacene OTFTs.

Effect of sleep stage on interictal high-frequency oscillations recorded from depth macroelectrodes in patients with focal epilepsy

PubMed Central

Bagshaw, Andrew P.; Jacobs, Julia; LeVan, Pierre; Dubeau, François; Gotman, Jean

2013-01-01

Summary Purpose To investigate the effect of sleep stage on the properties of high-frequency oscillations (HFOs) recorded from depth macroelectrodes in patients with focal epilepsy. Methods Ten-minute epochs of wakefulness (W), stage 1–2 non-REM (N1-N2), stage 3 non-REM (N3) and REM sleep (R) were identified from stereo- electroencephalography (SEEG) data recorded at 2 kHz in nine patients. Rates of spikes, ripples (>80 Hz), and fast ripples (>250 Hz) were calculated, as were HFO durations, degree of spike–HFO overlap, HFO rates inside and outside of spikes, and inside and outside of the seizure-onset zone (SOZ). Results Ripples were observed in nine patients and fast ripples in eight. Spike rate was highest in N1-N2 in 5 of 9 patients, and in N3 in 4 of 9 patients, whereas ripple rate was highest in N1-N2 in 4 of 9 patients, in N3 in 4 of 9 patients, and in Win 1 of 9 patients. Fast ripple rate was highest in N1-N2 in 4 of 8 patients, and in N3 in 4 of 8 patients. HFO properties changed significantly with sleep stage, although the absolute effects were small. The difference in HFO rates inside and outside of the SOZ was highly significant (p < 0.000001) in all stages except for R and, for fast ripples, only marginally significant (p = 0.018) in W. Conclusions Rates of HFOs recorded from depth macroelectrodes are highest in non-REM sleep. HFO properties were similar in stages N1-N2 and N3, suggesting that accurate sleep staging is not necessary. The spatial specificity of HFO, particularly fast ripples, was affected by sleep stage, suggesting that recordings excluding REM sleep and wakefulness provide a more reliable indicator of the SOZ. PMID:18801037

Evaluation of oxide-coated iridium-rhenium chambers

NASA Astrophysics Data System (ADS)

Reed, Brian D.

1994-03-01

Iridium-coated rhenium (Ir-Re) provides long life operation of radiation-cooled rockets at temperatures up to 2200 C. Ceramic oxide coatings could be used to increase Ir-Re rocket lifetimes and allow operation in highly oxidizing environments. Ceramic oxide coatings promise to serve as both thermal and diffusion barriers for the iridium layer. Seven ceramic oxide-coated Ir-Re, 22-N rocket chambers were tested with gaseous hydrogen/gaseous oxygen (GHz/G02) propellants. Five chambers had thick (over 10 mils), monolithic coatings of either hafnia (HfO2) or zirconia (ZrO2). Two chambers had coatings with thicknesses less than 5 mils. One of these chambers had a thin-walled coating of ZrO2 infiltrated with sol gel HfO2. The other chamber had a coating composed of an Ir-oxide composite. The purpose of this test program was to assess the ability of the oxide coatings to withstand the thermal shock of combustion initiation, adhere under repeated thermal cycling, and operate in aggressively oxidizing environments. All of the coatings survived the thermal shock of combustion and demonstrated operation at mixture ratios up to 11. Testing the Ir-oxide composite-coated chamber included over 29 min at mixture ratio 16. The thicker walled coatings provided the larger temperature drops across the oxide layer (up to 570 C), but were susceptible to macrocracking and eventual chipping at a stress concentrator. The cracks apparently resealed during firing, under compression of the oxide layer. The thinner walled coatings did not experience the macrocracking and chipping of the chambers that was seen with the thick, monolithic coatings. However, burn-throughs in the throat region did occur in both of the thin-walled chambers at mixture ratios well above stoichiometric. The burn-throughs were probably the result of oxygen diffusion through the oxide coating that allowed the underlying Ir and Re layers to be oxidized. The results of this test program indicated that the thin-walled oxide coatings are better suited for repeated thermal cycling than the thick-walled coating, while thicker coatings may be required for operation in aggressively oxidizing environments.

Evaluation of oxide-coated iridium-rhenium chambers

NASA Technical Reports Server (NTRS)

Reed, Brian D.

1994-01-01

Iridium-coated rhenium (Ir-Re) provides long life operation of radiation-cooled rockets at temperatures up to 2200 C. Ceramic oxide coatings could be used to increase Ir-Re rocket lifetimes and allow operation in highly oxidizing environments. Ceramic oxide coatings promise to serve as both thermal and diffusion barriers for the iridium layer. Seven ceramic oxide-coated Ir-Re, 22-N rocket chambers were tested with gaseous hydrogen/gaseous oxygen (GHz/G02) propellants. Five chambers had thick (over 10 mils), monolithic coatings of either hafnia (HfO2) or zirconia (ZrO2). Two chambers had coatings with thicknesses less than 5 mils. One of these chambers had a thin-walled coating of ZrO2 infiltrated with sol gel HfO2. The other chamber had a coating composed of an Ir-oxide composite. The purpose of this test program was to assess the ability of the oxide coatings to withstand the thermal shock of combustion initiation, adhere under repeated thermal cycling, and operate in aggressively oxidizing environments. All of the coatings survived the thermal shock of combustion and demonstrated operation at mixture ratios up to 11. Testing the Ir-oxide composite-coated chamber included over 29 min at mixture ratio 16. The thicker walled coatings provided the larger temperature drops across the oxide layer (up to 570 C), but were susceptible to macrocracking and eventual chipping at a stress concentrator. The cracks apparently resealed during firing, under compression of the oxide layer. The thinner walled coatings did not experience the macrocracking and chipping of the chambers that was seen with the thick, monolithic coatings. However, burn-throughs in the throat region did occur in both of the thin-walled chambers at mixture ratios well above stoichiometric. The burn-throughs were probably the result of oxygen diffusion through the oxide coating that allowed the underlying Ir and Re layers to be oxidized. The results of this test program indicated that the thin-walled oxide coatings are better suited for repeated thermal cycling than the thick-walled coating, while thicker coatings may be required for operation in aggressively oxidizing environments.

Physical property improvement of IZTO thin films using a hafnia buffer layer

NASA Astrophysics Data System (ADS)

Park, Jong-Chan; Kang, Seong-Jun; Choi, Byeong-Gyun; Yoon, Yung-Sup

2018-01-01

Hafnia (HfO2) has excellent mechanical and chemical stability, good transmittance, high dielectric constant, and radiation resistance property; thus, it can prevent impurities from permeating into the depositing films. So, we deposited hafnia films with various thicknesses in the range of 0-60 nm on polyethylene naphthalate (PEN) substrates before depositing indium-zinc-tin oxide (IZTO) thin films on them using RF magnetron sputtering, and their structural, morphological, optical, and electrical properties were evaluated. All IZTO thin films were successfully deposited without cracks or pinholes and had amorphous structures. As the thickness of the hafnia film increased to 30 nm, the overall properties improved; a surface roughness of 2.216 nm, transmittance of 82.59% at 550 nm, resistivity of 5.66 × 10-4 Ω cm, sheet resistance of 23.60 Ω/sq, and figure of merit of 6.26 × 10-3 Ω-1 were realized. These results indicate that the structure and materials studied in this research are suitable for application in flexible transparent electronic devices such as organic light emitting diodes, liquid crystal displays, touch panels, and solar cells.

Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

NASA Astrophysics Data System (ADS)

Esakky, Papanasam; Kailath, Binsu J.

2017-08-01

HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

Formaldehyde as a carbon and electron shuttle between autotroph and heterotroph populations in acidic hydrothermal vents of Norris Geyser Basin, Yellowstone National Park.

PubMed

Moran, James J; Whitmore, Laura M; Isern, Nancy G; Romine, Margaret F; Riha, Krystin M; Inskeep, William P; Kreuzer, Helen W

2016-05-01

The Norris Geyser Basin in Yellowstone National Park contains a large number of hydrothermal systems, which host microbial populations supported by primary productivity associated with a suite of chemolithotrophic metabolisms. We demonstrate that Metallosphaera yellowstonensis MK1, a facultative autotrophic archaeon isolated from a hyperthermal acidic hydrous ferric oxide (HFO) spring in Norris Geyser Basin, excretes formaldehyde during autotrophic growth. To determine the fate of formaldehyde in this low organic carbon environment, we incubated native microbial mat (containing M. yellowstonensis) from a HFO spring with (13)C-formaldehyde. Isotopic analysis of incubation-derived CO2 and biomass showed that formaldehyde was both oxidized and assimilated by members of the community. Autotrophy, formaldehyde oxidation, and formaldehyde assimilation displayed different sensitivities to chemical inhibitors, suggesting that distinct sub-populations in the mat selectively perform these functions. Our results demonstrate that electrons originally resulting from iron oxidation can energetically fuel autotrophic carbon fixation and associated formaldehyde excretion, and that formaldehyde is both oxidized and assimilated by different organisms within the native microbial community. Thus, formaldehyde can effectively act as a carbon and electron shuttle connecting the autotrophic, iron oxidizing members with associated heterotrophic members in the HFO community.

Formaldehyde as a carbon and electron shuttle between autotroph and heterotroph populations in acidic hydrothermal vents of Norris Geyser Basin, Yellowstone National Park

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moran, James J.; Whitmore, Laura M.; Isern, Nancy G.

The Norris Geyser Basin in Yellowstone National Park contains a large number of hydrothermal systems, which host microbial populations supported by primary productivity associated with a suite of chemolithotrophic metabolisms. We demonstrate that Metallosphaera yellowstonesis MK1, a facultative autotrophic archaeon isolated from a hyperthermal acidic hydrous ferric oxide (HFO) spring in Norris Geyser Basin, excretes formaldehyde during autotrophic growth. To determine the fate of formaldehyde in this low organic carbon environment, we incubated native microbial mat (containing M. yellowstonensis) from a HFO spring with 13C-formaldehyde. Isotopic analysis of incubation-derived CO2 and biomass showed that formaldehyde was both oxidized and assimilatedmore » by members of the community. Autotrophy, formaldehyde oxidation, and formaldehyde assimilation displayed different sensitivities to chemical inhibitors, suggesting that distinct sub-populations in the mat selectively perform these functions. Our results demonstrate that electrons originally resulting from iron oxidation can energetically fuel autotrophic carbon fixation and associated formaldehyde excretion, and that formaldehyde is both oxidized and assimilated by different organisms within the native microbial community. Thus, formaldehyde can effectively act as a carbon and electron shuttle connecting the autotrophic, iron oxidizing members with associated heterotrophic members in the HFO community.« less

Effect of increased surface tension and assisted ventilation on /sup 99m/Tc-DTPA clearance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jefferies, A.L.; Kawano, T.; Mori, S.

1988-02-01

Experiments were performed to determine the effects of conventional mechanical ventilation (CMV) and high-frequency oscillation (HFO) on the clearance of technetium-99m-labeled diethylenetriamine pentaacetate (/sup 99m/Tc-DTPA) from lungs with altered surface tension properties. A submicronic aerosol of /sup 99m/Tc-DTPA was insufflated into the lungs of anesthetized, tracheotomized rabbits before and 1 h after the administration of the aerosolized detergent dioctyl sodium sulfosuccinate (OT). Rabbits were ventilated by one of four methods: 1) spontaneous breathing; 2) CMV at 12 cmH2O mean airway pressure (MAP); 3) HFO at 12 cmH2O MAP; 4) HFO at 16 cmH2O MAP. Administration of OT resulted in decreasedmore » arterial PO2 (PaO2), increased lung wet-to-dry weight ratios, and abnormal lung pressure-volume relationships, compatible with increased surface tension. /sup 99m/Tc-DTPA clearance was accelerated after OT in all groups. The post-OT rate of clearance (k) was significantly faster (P less than 0.05) in the CMV at 12 cmH2O MAP (k = 7.57 +/- 0.71%/min (SE)) and HFO at 16 cmH2O MAP (k = 6.92 +/- 0.61%/min) groups than in the spontaneously breathing (k = 4.32 +/- 0.55%/min) and HFO at 12 cmH2O MAP (4.68 +/- 0.63%/min) groups. The clearance curves were biexponential in the former two groups. We conclude that pulmonary clearance of /sup 99m/Tc-DTPA is accelerated in high surface tension pulmonary edema, and this effect is enhanced by both conventional ventilation and HFO at high mean airway pressure.« less

Phosphorus recovery from biogas slurry by ultrasound/H2O2 digestion coupled with HFO/biochar adsorption process.

PubMed

He, Xuemeng; Zhang, Tao; Ren, Hongqiang; Li, Guoxue; Ding, Lili; Pawlowski, Lucjan

2017-02-01

Phosphorus (P) recovery from biogas slurry has recently attracted considerable interest. In this work, ultrasound/H 2 O 2 digestion coupled with ferric oxide hydrate/biochar (HFO/biochar) adsorption process was performed to promote P dissolution, release, and recovery from biogas slurry. The results showed that the optimal total phosphorus release efficiency was achieved at an inorganic phosphorus/total phosphorus ratio of 95.0% at pH 4, 1mL of added H 2 O 2 , and ultrasonication for 30min. The P adsorption by the HFO/biochar followed pseudo second-order kinetics and was mainly controlled by chemical processes. The Langmuir-Freundlich model matched the experimental data best for P adsorption by HFO/biochar at 298 and 308K, whereas the Freundlich model matched best at 318K. The maximum amount of P adsorbed was 220mg/g. The process was endothermic, spontaneous, and showed an increase in disorder at the solid-liquid interface. The saturated adsorbed HFO/biochar continually releases P and is most suitable for use in an alkaline environment. The amount of P released reached 29.1mg/g after five extractions. P mass balance calculation revealed that 11.3% of the total P can be made available. Copyright © 2016. Published by Elsevier Ltd.

Effects of HfO2/Al2O3 gate stacks on electrical performance of planar In x Ga1- x As tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Ahn, Dae-Hwan; Yoon, Sang-Hee; Takenaka, Mitsuru; Takagi, Shinichi

2017-08-01

We study the impact of gate stacks on the electrical characteristics of Zn-diffused source In x Ga1- x As tunneling field-effect transistors (TFETs) with Al2O3 or HfO2/Al2O3 gate insulators. Ta and W gate electrodes are compared in terms of the interface trap density (D it) of InGaAs MOS interfaces. It is found that D it is lower at the W/HfO2/Al2O3 InGaAs MOS interface than at the Ta/HfO2/Al2O3 interface. The In0.53Ga0.47As TFET with a W/HfO2 (2.7 nm)/Al2O3 (0.3 nm) gate stack of 1.4-nm-thick capacitance equivalent thickness (CET) has a steep minimum subthreshold swing (SS) of 57 mV/dec, which is attributed to the thin CET and low D it. Also, the In0.53Ga0.47As (2.6 nm)/In0.67Ga0.33As (3.2 nm)/In0.53Ga0.47As (96.5 nm) quantum-well (QW) TFET supplemented with this 1.4-nm-thick CET gate stack exhibits a steeper minimum SS of 54 mV/dec and a higher on-current (I on) than those of the In0.53Ga0.47As TFET.

Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using HfO2 ceramic target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aguirre, B.; Vemuri, R. S.; Zubia, David

2011-01-01

Hafnium oxide (HfO₂) thin films have been made by radio-frequency (rf) magnetron-sputtering onto Si(100) substrates under varying growth temperature (Ts). HfO₂ ceramic target has been employed for sputtering while varying the Ts from room temperature to 500⁰C during deposition. The effect of Ts on the growth and microstructure of deposited HfO₂ films has been studied using grazing incidence x-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), and high-resolution scanning electron microscopy (HR-SEM) coupled with energy dispersive x-ray spectrometry (EDS). The results indicate that the effect of Ts is significant on the growth, surface and interface structure, morphology and chemical composition ofmore » the HfO₂ films. Structural characterization indicates that the HfO₂ films grown at Ts<200 ⁰C are amorphous while films grown at Ts>200 ⁰C are nanocrystalline. An amorphous-to-crystalline transition occurs at Ts=200 ⁰C. Nanocrystalline HfO₂ films crystallized in a monoclinic structure with a (-111) orientation. XPS measurements indicated the high surface-chemical quality and stoichiometric nature of the grown HfO₂ films. An interface layer (IL) formation occurs due to reaction at the HfO₂-Si interface for HfO₂ films deposited at Ts>200 ⁰C. The thickness of IL increases with increasing Ts. XPS and EDS at the HfO₂-Si cross-section indicate the IL is a (Hf, Si)-O compound. The electrical characterization using capacitance-voltage measurements indicate that the dielectric constant decreases from 25 to 16 with increasing Ts.« less

Pulmonary surfactant concentration during transition from high frequency oscillation to conventional mechanical ventilation.

PubMed

Dargaville, P A; South, M; McDougall, P N

1997-12-01

To test the hypothesis that conventional mechanical ventilation (CV) provides a greater stimulus to secretion of pulmonary surfactant than high frequency oscillatory ventilation (HFO). Sequential examination of surfactant indices in lung lavage fluid in a group of six infants with severe lung disease (group 1), ventilated with HFO and then converted back to CV as their lung disease recovered. A similar group of 10 infants (group 2) ventilated conventionally throughout the course of their illness were studied for comparison. In groups 1 and 2, two sequential tracheal aspirate samples were taken, the first once lung disease was noted to be improving, and the second 48-72 h later. Group 1 infants had converted from HFO to CV during this time. A marked increase in concentration of total surfactant phospholipid (PL) and disaturated phosphatidylcholine (DSPC) was seen in group 1 after transition from HFO to CV; the magnitude of this increase was significantly greater than that sequentially observed in group II (total PL: 9.4-fold increase in group 1 vs 1.8-fold in group 2, P = 0.006; DSPC: group 1 6.4-fold increase vs. group 2 1.7-fold, P = 0.02). These findings suggest that intermittent lung inflation during CV produces more secretion of surfactant phospholipid than continuous alveolar distension on HFO, and raise the possibility that conservation and additional maturation of surfactant elements may occur when the injured lung is ventilated with HFO.

Slow DNA Transport through Nanopores in Hafnium Oxide Membranes

PubMed Central

Bell, David C.; Cohen-Karni, Tzahi; Rosenstein, Jacob K.; Wanunu, Meni

2016-01-01

We present a study of double- and single-stranded DNA transport through nanopores fabricated in ultrathin (2–7 nm thick) free-standing hafnium oxide (HfO2) membranes. The high chemical stability of ultrathin HfO2 enables long-lived experiments with <2 nm diameter pores that last several hours, in which we observe >50 000 DNA translocations with no detectable pore expansion. Mean DNA velocities are slower than velocities through comparable silicon nitride pores, providing evidence that HfO2 nanopores have favorable physicochemical interactions with nucleic acids that can be leveraged to slow down DNA in a nanopore. PMID:24083444

Role of oxygen vacancies in HfO2-based gate stack breakdown

NASA Astrophysics Data System (ADS)

Wu, X.; Migas, D. B.; Li, X.; Bosman, M.; Raghavan, N.; Borisenko, V. E.; Pey, K. L.

2010-04-01

We study the influence of multiple oxygen vacancy traps in the percolated dielectric on the postbreakdown random telegraph noise (RTN) digital fluctuations in HfO2-based metal-oxide-semiconductor transistors. Our electrical characterization results indicate that these digital fluctuations are triggered only beyond a certain gate stress voltage. First-principles calculations suggest the oxygen vacancies to be responsible for the formation of a subband in the forbidden band gap region, which affects the triggering voltage (VTRIG) for the RTN fluctuations and leads to a shrinkage of the HfO2 band gap.

Response to comment on "Environmental fate of the next generation refrigerant 2,3,3,3-tetrafluoropropene (HFO-1234yf)

DOE PAGES

Im, Jeongdae; Walshe-Langford, Gillian E.; Moon, Ji Won; ...

2015-06-11

In this study, refrigerant 2,3,3,3-tetrafluoropropene (HFO-1234yf) has been developed for use in mobile air conditioning systems to replace 1,1,1,2-tetrafluoroethane (HFC-134a), which has a much greater global warming potential.

Ozone and TFA impacts in North America from degradation of 2,3,3,3-Tetrafluoropropene (HFO-1234yf), a potential greenhouse gas replacement.

PubMed

Luecken, Deborah J; L Waterland, Robert; Papasavva, Stella; Taddonio, Kristen N; Hutzell, William T; Rugh, John P; Andersen, Stephen O

2010-01-01

We use a regional-scale, three-dimensional atmospheric model to evaluate U.S. air quality effects that would result from replacing HFC-134a in automobile air conditioners in the U.S. with HFO-1234yf. Although HFO-1234yf produces tropospheric ozone, the incremental amount is small, averaging less than 0.01% of total ozone formed during the simulation. We show that this production of ozone could be compensated for by a modest improvement in air conditioner efficiency. Atmospheric decomposition of HFO-1234yf produces trifluoroacetic acid (TFA), which is subject to wet and dry deposition. Deposition and concentrations of TFA are spatially variable due to HFO-1234yf's short atmospheric lifetime, with more localized peaks and less global transport when compared to HFC-134a. Over the 2.5 month simulation, deposition of TFA in the continental U.S. from mobile air conditioners averages 0.24 kg km(-2), substantially higher than previous estimates from all sources of current hydrofluorocarbons. Automobile air conditioning HFO-1234yf emissions are predicted to produce concentrations of TFA in Eastern U.S. rainfall at least double the values currently observed from all sources, natural and man-made. Our model predicts peak concentrations in rainfall of 1264 ng L(-1), a level that is 80x lower than the lowest level considered safe for the most sensitive aquatic organisms.

Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

NASA Astrophysics Data System (ADS)

Nagaiah, Padmaja

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p-channel MOSFETs. Band engineering, strain induced valence band splitting and quantum confinement is used to improve channel hole mobility. Experimental results on the Hall hole mobility is presented for InxGa1-xAs channels with varying In content, thickness of the quantum well and temperature. Then, high mobility InxGa 1-xAs heterostructure thus obtained are integrated with in-situ deposited high-k gate oxide required for high performance p-MOSFET and discuss the challenges associated with the gated structure and draw conclusions on this material system. Antimonide based channel materials such as GaSb and InxGa 1-xSb are explored for III-V based p-MOSFETs in last two chapters. Options for Sb based strained QW channels to obtain maximum hole mobility by varying the strain, channel and barrier material, thickness of the layers etc. is discussed followed by the growth of these Sb channels on GaAs and InP substrates using molecular beam epitaxy. The physical properties of the structures such as the heterostructure quality, alloy content and surface roughness are examined via TEM, XRD and AFM. Following this, electrical measurement results on Hall hole mobility is presented. The effect of strain, alloy content, temperature and thickness on channel mobility and concentration is reported. Development of GaSb n- and p-MOS capacitor structures with in-situ deposited HfO2 gate oxide dielectric using in-situ deposited amorphous Si (a-Si) interface passivation layer (IPL) to improve the interface quality of high-k oxide and (In)GaSb surface is presented. In-situ deposited gate oxides such as Al2O3 and combination oxide of Al 2O3 and HfO2 with and without the a-Si IPL are also explored as alternate gate dielectrics. Subsequently, MOS capacitor structures using buried InGaSb QWs are demonstrated. Development of an inversion type bulk GaSb with implanted source-drain contacts and in-situ deposited gate oxide HfO2 gate oxide is discussed. The merits of biaxial compressive strain is demonstrated on strained surface and buried channel In0.36 Ga0.64Sb QW MOSFETs with thin top barrier and in-situ deposited a-Si IPL and high-k HfO2 as well as combination Al 2O3+HfO2 gate stacks and ex-situ atomic layer deposited (ALD) combination gate oxide and with thin 2 nm InAs surface passivation layer is presented. Finally, summary of the salient results from the different chapters is provided with recommendations for future research.

Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory.

PubMed

Wang, Xue-Feng; Tian, He; Zhao, Hai-Ming; Zhang, Tian-Yu; Mao, Wei-Quan; Qiao, Yan-Cong; Pang, Yu; Li, Yu-Xing; Yang, Yi; Ren, Tian-Ling

2018-01-01

Metal oxide-based resistive random access memory (RRAM) has attracted a lot of attention for its scalability, temperature robustness, and potential to achieve machine learning. However, a thick oxide layer results in relatively high program voltage while a thin one causes large leakage current and a small window. Owing to these fundamental limitations, by optimizing the oxide layer itself a novel interface engineering idea is proposed to reduce the programming voltage, increase the uniformity and on/off ratio. According to this idea, a molybdenum disulfide (MoS 2 )-palladium nanoparticles hybrid structure is used to engineer the oxide/electrode interface of hafnium oxide (HfO x )-based RRAM. Through its interface engineering, the set voltage can be greatly lowered (from -3.5 to -0.8 V) with better uniformity under a relatively thick HfO x layer (≈15 nm), and a 30 times improvement of the memory window can be obtained. Moreover, due to the atomic thickness of MoS 2 film and high transmittance of ITO, the proposed RRAM exhibits high transparency in visible light. As the proposed interface-engineering RRAM exhibits good transparency, low SET voltage, and a large resistive switching window, it has huge potential in data storage in transparent circuits and wearable electronics with relatively low supply voltage. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermal Conductivity and Stability of HfO2-Y2O3 and La2Zr2O7 Evaluated for 1650 Deg C Thermal/Environmental Barrier Coating Applications

NASA Technical Reports Server (NTRS)

Zhu, Dong-Ming; Bansal, Narottam P.; Miller, Robert A.

2003-01-01

HfO2-Y2O3 and La2Zr2O7 are candidate thermal and environmental barrier coating (T/EBC) materials for gas turbine ceramic matrix composite (CMC) combustor applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature stability of hot-pressed and plasma sprayed specimens with representative partially-stabilized and fully-cubic HfO2-Y2O3 compositions and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasmasprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC hexoloy or SiC/SiC CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications are also discussed.

A force field for 3,3,3-fluoro-1-propenes, including HFO-1234yf.

PubMed

Raabe, Gabriele; Maginn, Edward J

2010-08-12

The European Union (EU) legislation 2006/40/EC bans from January 2011 the cooperative marketing of new car types that use refrigerants in their heating, ventilation, and air conditioning (HVAC) systems with global warming potentials (GWP) higher than 150. Thus, the phase-out of the presently used tetrafluoroethane refrigerant R134a necessitates the adoption of alternative refrigerants. Fluoropropenes such as 2,3,3,3-tetrafluoro-1-propene (HFO-1234yf) are currently regarded as promising low GWP refrigerants, but the lack of experimental data on their thermophysical properties hampers independent studies on their performance in HVAC systems or in other technical applications. In principle, molecular modeling can be used to predict the relevant properties of refrigerants, but adequate intermolecular potential functions ("force fields") are lacking for fluoropropenes. Thus, we developed a transferable force field for fluoropropenes composed of CF(3)-, -CF=, -CH=, CF(2)=, and CH(2)= groups and applied the force field to study 3,3,3 trifluoro-1-propene (HFO-1243zf), 2,3,3,3-tetrafluoro-1-propene (HFO-1234yf), and hexafluoro-1-propene (HFO-1216). We performed Gibbs ensemble simulations on these three fluoropropenes to compute the vapor pressure, saturated densities, and heats of vaporization. In addition, molecular dynamics simulations were conducted to provide predictions for the density, thermal expansivity, isobaric heat capacity, and transport properties of liquid HFO-1234yf in the temperature range from 263.15 to 310 K and pressures up to 2 MPa. Agreement between simulation results and experimental data and/or correlations (when available) was good, thereby validating the predictive ability of the force field.

A New NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA): Application to Angle-Resolved X-ray Photoelectron Spectroscopy of HfO2, ZrO2, HfSiO4, and ZrSiO4 Films on Silicon

NASA Astrophysics Data System (ADS)

Powell, C. J.; Smekal, W.; Werner, W. S. M.

2005-09-01

We describe a new NIST database for the Simulation of Electron Spectra for Surface Analysis (SESSA). This database provides data for the many parameters needed in quantitative Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). In addition, AES and XPS spectra can be simulated for layered samples. The simulated spectra, for layer compositions and thicknesses specified by the user, can be compared with measured spectra. The layer compositions and thicknesses can then be adjusted to find maximum consistency between simulated and measured spectra. In this way, AES and XPS can provide more detailed characterization of multilayer thin-film materials. We report on the use of SESSA for determining the thicknesses of HfO2, ZrO2, HfSiO4, and ZrSiO4 films on Si by angle-resolved XPS. Practical effective attenuation lengths (EALs) have been computed from SESSA as a function of film thickness and photoelectron emission angle (i.e., to simulate the effects of tilting the sample). These EALs have been compared with similar values obtained from the NIST Electron Effective-Attenuation-Length Database (SRD 82). Generally good agreement was found between corresponding EAL values, but there were differences for film thicknesses less than the inelastic mean free path of the photoelectrons in the overlayer film. These differences are due to a simplifying approximation in the algorithm used to compute EALs in SRD 82. SESSA, with realistic cross sections for elastic and inelastic scattering in the film and substrate materials, is believed to provide more accurate EALs than SRD 82 for thin-film thickness measurements, particularly in applications where the film and substrate have different electron-scattering properties.

A New NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA): Application to Angle-Resolved X-ray Photoelectron Spectroscopy of HfO2, ZrO2, HfSiO4, and ZrSiO4 Films on Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Powell, C.J.; Smekal, W.; Werner, W.S.M.

2005-09-09

We describe a new NIST database for the Simulation of Electron Spectra for Surface Analysis (SESSA). This database provides data for the many parameters needed in quantitative Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). In addition, AES and XPS spectra can be simulated for layered samples. The simulated spectra, for layer compositions and thicknesses specified by the user, can be compared with measured spectra. The layer compositions and thicknesses can then be adjusted to find maximum consistency between simulated and measured spectra. In this way, AES and XPS can provide more detailed characterization of multilayer thin-film materials. Wemore » report on the use of SESSA for determining the thicknesses of HfO2, ZrO2, HfSiO4, and ZrSiO4 films on Si by angle-resolved XPS. Practical effective attenuation lengths (EALs) have been computed from SESSA as a function of film thickness and photoelectron emission angle (i.e., to simulate the effects of tilting the sample). These EALs have been compared with similar values obtained from the NIST Electron Effective-Attenuation-Length Database (SRD 82). Generally good agreement was found between corresponding EAL values, but there were differences for film thicknesses less than the inelastic mean free path of the photoelectrons in the overlayer film. These differences are due to a simplifying approximation in the algorithm used to compute EALs in SRD 82. SESSA, with realistic cross sections for elastic and inelastic scattering in the film and substrate materials, is believed to provide more accurate EALs than SRD 82 for thin-film thickness measurements, particularly in applications where the film and substrate have different electron-scattering properties.« less

Feature Modeling of HfO2 Atomic Layer Deposition Using HfCl4/H2O

NASA Astrophysics Data System (ADS)

Stout, Phillip J.; Adams, Vance; Ventzek, Peter L. G.

2003-03-01

A Monte Carlo based feature scale model (Papaya) has been applied to atomic layer deposition (ALD) of HfO2 using HfCl_4/H_20. The model includes physical effects of transport to surface, specular and diffusive reflection within feature, adsorption, surface diffusion, deposition and etching. Discussed will be the 3D feature modeling of HfO2 deposition in assorted features (vias and trenches). The effect of feature aspect ratios, pulse times, cycle number, and temperature on film thickness, feature coverage, and film Cl fraction (surface/bulk) will be discussed. Differences between HfO2 ALD on blanket wafers and in features will be highlighted. For instance, the minimum pulse times sufficient for surface reaction saturation on blanket wafers needs to be increased when depositing on features. Also, HCl products created during the HfCl4 and H_20 pulses are more likely to react within a feature than at the field, reducing OH coverage within the feature (vs blanket wafer) thus limiting the maximum coverage attainable for a pulse over a feature.

Low toxicity of HfO2, SiO2, Al2O3 and CeO2 nanoparticles to the yeast, Saccharomyces cerevisiae.

PubMed

García-Saucedo, Citlali; Field, James A; Otero-Gonzalez, Lila; Sierra-Álvarez, Reyes

2011-09-15

Increasing use of nanomaterials necessitates an improved understanding of their potential impact on environment health. This study evaluated the cytotoxicity of nanosized HfO(2), SiO(2), Al(2)O(3) and CeO(2) towards the eukaryotic model organism Saccharomyces cerevisiae, and characterized their state of dispersion in bioassay medium. Nanotoxicity was assessed by monitoring oxygen consumption in batch cultures and by analysis of cell membrane integrity. CeO(2), Al(2)O(3), and HfO(2) nanoparticles were highly unstable in yeast medium and formed micron-sized, settleable agglomerates. A non-toxic polyacrylate dispersant (Dispex A40) was used to improve nanoparticle stability and determine the impact of enhanced dispersion on toxicity. None of the NPs tested without dispersant inhibited O(2) uptake by yeast at concentrations as high as 1000 mg/L. Dispersant supplementation only enhanced the toxicity of CeO(2) (47% at 1000 mg/L). Dispersed SiO(2) and Al(2)O(3) (1000 mg/L) caused cell membrane damage, whereas dispersed HfO(2) and CeO(2) did not cause significant disruption of membrane integrity at the same concentration. These results suggest that the O(2) uptake inhibition observed with dispersed CeO(2) NPs was not due to reduced cell viability. This is the first study evaluating toxicity of nanoscale HfO(2), SiO(2), Al(2)O(3) and CeO(2) to S. cerevisiae. Overall the results obtained demonstrate that these nanomaterials display low or no toxicity to yeast. Copyright © 2011 Elsevier B.V. All rights reserved.

Impacts of the Degradation of 2,3,3,3-Tetrafluoropropene into Trifluoroacetic Acid from Its Application in Automobile Air Conditioners in China, the United States, and Europe.

PubMed

Wang, Ziyuan; Wang, Yuhang; Li, Jianfeng; Henne, Stephan; Zhang, Boya; Hu, Jianxin; Zhang, Jianbo

2018-03-06

HFO-1234yf (2,3,3,3-tetrafluoropropene) was proposed as an automobile air conditioner (MAC) refrigerant worldwide. However, its atmospheric degradation product is the highly soluble and phytotoxic trifluoroacetic acid (TFA), which persists in aquatic environments. We used a global three-dimensional chemical transport model to assess the potential environmental effects resulting from complete future conversion of the refrigerant in all MAC to HFO-1234yf in China, the United States, and Europe. The annual mean atmospheric concentrations of HFO-1234yf were 2.62, 2.20, and 2.73 pptv, and the mean deposition rates of TFA were 0.96, 0.45, and 0.52 kg km -2 yr -1 , in three regions. The regional TFA deposition sources mainly came from emissions within the same region. The annual TFA deposition in the North Pole region was lower than the global average and mainly originated from European emissions. A potential doubling in the future HFO-1234yf emissions in China mainly affected the local TFA depositions. The TFA concentrations in rainwater were strongly affected by the regional precipitation rates. North Africa and the Middle East, regions with scant rainfall, had extremely high TFA concentrations. The rainwater concentrations of TFA during individual rain events can exceed the level considered to be safe, indicating substantial potential regional risks from future HFO-1234yf use.

Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

NASA Astrophysics Data System (ADS)

Zhang, Hongpeng; Jia, Renxu; Lei, Yuan; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming

2018-02-01

In this paper, current conduction mechanisms in HfO2/β-Ga2O3 metal-oxide-semiconductor (MOS) capacitors under positive and negative biases are investigated using the current-voltage (I-V) measurements conducted at temperatures from 298 K to 378 K. The Schottky emission is dominant under positively biased electric fields of 0.37-2.19 MV cm-1, and the extracted Schottky barrier height ranged from 0.88 eV to 0.91 eV at various temperatures. The Poole-Frenkel emission dominates under negatively biased fields of 1.92-4.83 MV cm-1, and the trap energy levels are from 0.71 eV to 0.77 eV at various temperatures. The conduction band offset (ΔE c) of HfO2/β-Ga2O3 is extracted to be 1.31  ±  0.05 eV via x-ray photoelectron spectroscopy, while a large negative sheet charge density of 1.04  ×  1013 cm-2 is induced at the oxide layer and/or HfO2/β-Ga2O3 interface. A low C-V hysteresis of 0.76 V, low interface state density (D it) close to 1  ×  1012 eV-1 cm-2, and low leakage current density of 2.38  ×  10-5 A cm-2 at a gate voltage of 7 V has been obtained, suggesting the great electrical properties of HfO2/β-Ga2O3 MOSCAP. According to the above analysis, ALD-HfO2 is an attractive candidate for high voltage β-Ga2O3 power devices.

Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface.

PubMed

Zafar, Sufi; D'Emic, Christopher; Afzali, Ali; Fletcher, Benjamin; Zhu, Y; Ning, Tak

2011-10-07

Silicon nanowire field effect transistor sensors with SiO(2)/HfO(2) as the gate dielectric sensing surface are fabricated using a top down approach. These sensors are optimized for pH sensing with two key characteristics. First, the pH sensitivity is shown to be independent of buffer concentration. Second, the observed pH sensitivity is enhanced and is equal to the Nernst maximum sensitivity limit of 59 mV/pH with a corresponding subthreshold drain current change of ∼ 650%/pH. These two enhanced pH sensing characteristics are attributed to the use of HfO(2) as the sensing surface and an optimized fabrication process compatible with silicon processing technology.

Laser-induced damage thresholds of bulk and coating optical materials at 1030  nm, 500  fs.

PubMed

Gallais, Laurent; Commandré, Mireille

2014-02-01

We report on extensive femtosecond laser damage threshold measurements of optical materials in both bulk and thin-film form. This study, which is based on published and new data, involved simple oxide and fluoride films, composite films made from a mixture of two dielectric materials, metallic films, and the surfaces of various bulk materials: oxides, fluorides, semiconductors, and ionic crystals. The samples were tested in comparable conditions at 1030 nm, 375 to 600 fs, under single-pulse irradiation. A large number of different samples prepared by different deposition techniques have been tested, involving classical materials used in the fabrication of optical thin film components (Ag, AlF3, Al2O3, HfO2, MgF2, Nb2O5, Pt, Sc2O3, SiO2, Ta2O5, Y2O3, and ZrO2) and their combination with codeposition processes. Their behaviors are compared with the surfaces of bulk materials (Al2O3, BaF2, CaF2, Ge, KBr, LiF, MgF2, NaCl, Quartz, Si, ZnS, ZnSe, and different silica glasses). Tabulated values of results are presented and discussed.

Ultralow-voltage design of graphene PN junction quantum reflective switch transistor

NASA Astrophysics Data System (ADS)

Sohier, Thibault; Yu, Bin

2011-05-01

We propose the concept of a graphene-based quantum reflective switch (QRS) for low-power logic application. With the unique electronic properties of graphene, a tilted PN junction is used to implement logic switch function with 103 ON/OFF ratio. Carriers are reflected on an electrostatically induced potential step with strong incidence-angle-dependency due to the widening of classically forbidden energies. Optimized design of the device for ultralow-voltage operating has been conducted. The device is constantly ON with a turning-off gate voltage around 180 mV using thin HfO2 as the gate dielectric. The results suggest a class of logic switch devices operating with micropower dissipation.

Effective Enrichment and Mass Spectrometry Analysis of Phosphopeptides Using Mesoporous Metal Oxide Nanomaterials

PubMed Central

Nelson, Cory A.; Szczech, Jeannine R.; Dooley, Chad J.; Xu, Qingge; Lawrence, Matthew J.; Zhu, Haoyue; Jin, Song; Ge, Ying

2010-01-01

Mass spectrometry (MS)-based phosphoproteomics remains challenging due to the low abundance of phosphoproteins and substoichiometric phosphorylation. This demands better methods to effectively enrich phosphoproteins/peptides prior to MS analysis. We have previously communicated the first use of mesoporous zirconium oxide (ZrO2) nanomaterials for effective phosphopeptide enrichment. Here we present the full report including the synthesis, characterization, and application of mesoporous titanium dioxide (TiO2), ZrO2, and hafnium oxide (HfO2) in phosphopeptide enrichment and MS analysis. Mesoporous ZrO2 and HfO2 are demonstrated to be superior to TiO2 for phosphopeptide enrichment from a complex mixture with high specificity (>99%), which could almost be considered as “a purification”, mainly because of the extremely large active surface area of mesoporous nanomaterials. A single enrichment and Fourier transform MS analysis of phosphopeptides digested from a complex mixture containing 7% of α-casein identified 21 out of 22 phosphorylation sites for α-casein. Moreover, the mesoporous ZrO2 and HfO2 can be reused after a simple solution regeneration procedure with comparable enrichment performance to that of fresh materials. Mesoporous ZrO2 and HfO2 nanomaterials hold great promise for applications in MS-based phosphoproteomics. PMID:20704311

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Guo Xing; Hatchtel, Jordan; Shen, Xiao

Here, we investigate negative-bias temperature instabilities in SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics. The activation energies we measured for interface-trap charge buildup during negative-bias temperature stress were lower for SiGe channel pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si capping layers than for conventional Si channel pMOSFETs with SiO 2 gate dielectrics. Electron energy loss spectroscopy and scanning transmission electron microscopy images demonstrate that Ge atoms can diffuse from the SiGe layer into the Si capping layer, which is adjacent to the SiO 2/HfO 2 gate dielectric. Density functional calculations show that these Ge atoms reduce themore » strength of nearby Si-H bonds and that Ge-H bond energies are still lower, thereby reducing the activation energy for interface-trap generation for the SiGe devices. Moreover, activation energies for oxide-trap charge buildup during negative-bias temperature stress are similarly small for SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si pMOSFETs with SiO 2 gate dielectrics, suggesting that, in both cases, the oxide-trap charge buildup likely is rate-limited by hole tunneling into the near-interfacial SiO 2.« less

Differential proteomic analysis of mouse macrophages exposed to adsorbate-loaded heavy fuel oil derived combustion particles using an automated sample-preparation workflow.

PubMed

Kanashova, Tamara; Popp, Oliver; Orasche, Jürgen; Karg, Erwin; Harndorf, Horst; Stengel, Benjamin; Sklorz, Martin; Streibel, Thorsten; Zimmermann, Ralf; Dittmar, Gunnar

2015-08-01

Ship diesel combustion particles are known to cause broad cytotoxic effects and thereby strongly impact human health. Particles from heavy fuel oil (HFO) operated ships are considered as particularly dangerous. However, little is known about the relevant components of the ship emission particles. In particular, it is interesting to know if the particle cores, consisting of soot and metal oxides, or the adsorbate layers, consisting of semi- and low-volatile organic compounds and salts, are more relevant. We therefore sought to relate the adsorbates and the core composition of HFO combustion particles to the early cellular responses, allowing for the development of measures that counteract their detrimental effects. Hence, the semi-volatile coating of HFO-operated ship diesel engine particles was removed by stepwise thermal stripping using different temperatures. RAW 264.7 macrophages were exposed to native and thermally stripped particles in submersed culture. Proteomic changes were monitored by two different quantitative mass spectrometry approaches, stable isotope labeling by amino acids in cell culture (SILAC) and dimethyl labeling. Our data revealed that cells reacted differently to native or stripped HFO combustion particles. Cells exposed to thermally stripped particles showed a very differential reaction with respect to the composition of the individual chemical load of the particle. The cellular reactions of the HFO particles included reaction to oxidative stress, reorganization of the cytoskeleton and changes in endocytosis. Cells exposed to the 280 °C treated particles showed an induction of RNA-related processes, a number of mitochondria-associated processes as well as DNA damage response, while the exposure to 580 °C treated HFO particles mainly induced the regulation of intracellular transport. In summary, our analysis based on a highly reproducible automated proteomic sample-preparation procedure shows a diverse cellular response, depending on the soot particle composition. In particular, it was shown that both the molecules of the adsorbate layer as well as particle cores induced strong but different effects in the exposed cells.

Nanoindentation investigation of HfO2 and Al2O3 films grown by atomic layer deposition

Treesearch

K. Tapily; Joseph E. Jakes; D. S. Stone; P. Shrestha; D. Gu; H. Baumgart; A. A. Elmustafa

2008-01-01

The challenges of reducing gate leakage current and dielectric breakdown beyond the 45 nm technology node have shifted engineers’ attention from the traditional and proven dielectric SiO2 to materials of higher dielectric constant also known as high-k materials such as hafnium oxide (HfO2) and aluminum oxide (Al2O3). These high-k materials are projected to...

DuPont Petition to Exempt HFO from VOC List

EPA Pesticide Factsheets

Petition to exclude the chemcial 1, 1, 4, 4-hexafluorobut-2-ene (HFO 1336 mzz-Z) from the definition of volatile organic compound (VOC) and therefore allow it to be used in the US without regulation as a potential precursor to tropospheric ozone.

Diel behavior of iron and other heavy metals in a mountain stream with acidic to neutral pH: Fisher Creek, Montana, USA

USGS Publications Warehouse

Gammons, C.H.; Nimick, D.A.; Parker, S.R.; Cleasby, T.E.; McCleskey, R. Blaine

2005-01-01

Three simultaneous 24-h samplings at three sites over a downstream pH gradient were conducted to examine diel fluctuations in heavy metal concentrations in Fisher Creek, a small mountain stream draining abandoned mine lands in Montana. Average pH values at the upstream (F1), middle (F2), and downstream (F3) monitoring stations were 3.31, 5.46, and 6.80, respectively. The downstream increase in pH resulted in precipitation of hydrous ferric oxide (HFO) and hydrous aluminum oxide (HAO) on the streambed. At F1 and F2, Fe showed strong diel cycles in dissolved concentration and Fe(II)/Fe(III) ratio; these cycles were attributed to daytime photoreduction of Fe(III) to Fe(II), reoxidation of Fe(II) to Fe(III), and temperature-dependent hydrolysis and precipitation of HFO. At the near-neutral downstream station, no evidence of Fe(III) photoreduction was observed, and suspended particles of HFO dominated the total Fe load. HFO precipitation rates between F2 and F3 were highest in the afternoon, due in part to reoxidation of a midday pulse of Fe2+ formed by photoreduction in the upper, acidic portions of the stream. Dissolved concentrations of Fe(II) and Cu decreased tenfold and 2.4-fold, respectively, during the day at F3. These changes were attributed to sorption onto fresh HFO surfaces. Results of surface complexation modeling showed good agreement between observed and predicted Cu concentrations at F3, but only when adsorption enthalpies were added to the thermodynamic database to take into account diel temperature variations. The field and modeling results illustrate that the degree to which trace metals adsorb onto actively forming HFO is strongly temperature dependent. This study is an example of how diel Fe cycles caused by redox and hydrolysis reactions can induce a diel cycle in a trace metal of toxicological importance in downstream waters. Copyright ?? 2005 Elsevier Ltd.

Nonvolatile memories using deep traps formed in HfO2 by Nb ion implantation

NASA Astrophysics Data System (ADS)

Choul Kim, Min; Oh Kim, Chang; Taek Oh, Houng; Choi, Suk-Ho; Belay, K.; Elliman, R. G.; Russo, S. P.

2011-03-01

We report nonvolatile memories (NVMs) based on deep-energy trap levels formed in HfO2 by metal ion implantation. A comparison of Nb- and Ta-implanted samples shows that suitable charge-trapping centers are formed in Nb-implanted samples, but not in Ta-implanted samples. This is consistent with density-functional theory calculations which predict that only Nb will form deep-energy levels in the bandgap of HfO2. Photocurrent spectroscopy exhibits characteristics consistent with one of the trap levels predicted in these calculations. Nb-implanted samples showing memory windows in capacitance-voltage (V) curves always exhibit current (I) peaks in I-V curves, indicating that NVM effects result from deep traps in HfO2. In contrast, Ta-implanted samples show dielectric breakdowns during the I-V sweeps between 5 and 11 V, consistent with the fact that no trap levels are present. For a sample implanted with a fluence of 1013 Nb cm-2, the charge losses after 104 s are ˜9.8 and ˜25.5% at room temperature (RT) and 85°C, respectively, and the expected charge loss after 10 years is ˜34% at RT, very promising for commercial NVMs.

EDITORIAL: Atomic layer deposition Atomic layer deposition

NASA Astrophysics Data System (ADS)

Godlewski, Marek

2012-07-01

The growth method of atomic layer deposition (ALD) was introduced in Finland by Suntola under the name of atomic layer epitaxy (ALE). The method was originally used for deposition of thin films of sulphides (ZnS, CaS, SrS) activated with manganese or rare-earth ions. Such films were grown for applications in thin-film electroluminescence (TFEL) displays. The ALE mode of growth was also tested in the case of molecular beam epitaxy. Films grown by ALD are commonly polycrystalline or even amorphous. Thus, the name ALE has been replaced by ALD. In the 80s ALD was developed mostly in Finland and neighboring Baltic countries. Deposition of a range of different materials was demonstrated at that time, including II-VI semiconductors (e.g. CdTe, CdS) and III-V (e.g. GaAs, GaN), with possible applications in e.g. photovoltaics. The number of publications on ALD was slowly increasing, approaching about 100 each year. A real boom in interest came with the development of deposition methods of thin films of high-k dielectrics. This research was motivated by a high leakage current in field-effect transistors with SiO2-based gate dielectrics. In 2007 Intel introduced a new generation of integrated circuits (ICs) with thin films of HfO2 used as gate isolating layers. In these and subsequent ICs, films of HfO2 are deposited by the ALD method. This is due to their unique properties. The introduction of ALD to the electronics industry led to a booming interest in the ALD growth method, with the number of publications increasing rapidly to well above 1000 each year. A number of new applications were proposed, as reflected in this special issue of Semiconductor Science and Technology. The included articles cover a wide range of possible applications—in microelectronics, transparent electronics, optoelectronics, photovoltaics and spintronics. Research papers and reviews on the basics of ALD growth are also included, reflecting a growing interest in precursor chemistry and growth processes. Summarizing, this special issue of Semiconductor Science and Technology reflects the rapidly growing interest in the ALD growth method and demonstrates the wide range of possible practical applications of ALD-grown materials, not only of high-k dielectrics, but also of a range of different materials (e.g. ZnO). Finally, I would like to thank the IOP editorial staff, in particular Alice Malhador, for their support and efforts in making this special issue possible.

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

PubMed Central

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-01-01

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I–V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later. PMID:28252106

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

NASA Astrophysics Data System (ADS)

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-01

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers.

PubMed

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-02

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO 2 /nanoporous-Si and the TiO 2 /nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO 2 /nanoporous Si are lower than that of the HfO 2 /nanoporous Si, the former is more stable than the later.

Reactive sputter deposition of metal oxide nanolaminates

NASA Astrophysics Data System (ADS)

Rubin Aita, Carolyn

2008-07-01

We discuss the reactive sputter deposition of metal oxide nanolaminates on unheated substrates using four archetypical examples: ZrO2 Al2O3, HfO2 Al2O3, ZrO2 Y2O3, and ZrO2 TiO2. The pseudobinary bulk phase diagrams corresponding to these nanolaminates represent three types of interfaces. I. Complete immiscibility (ZrO2 Al2O3 and HfO2 Al2O3). II. Complete miscibility (ZrO2 Y2O3). III. Limited miscibility without a common end-member lattice (ZrO2 TiO2). We found that, although reactive sputter deposition is a far-from-equilibrium process, thermodynamic considerations strongly influence both phase formation within layers and at interfaces. We show that pseudobinary phase diagrams can be used to predict interfacial cation mixing in the nanolaminates. However, size effects must be considered to predict specific structures. In the absence of pseudoepitaxy, size effects play a significant role in determining the nanocrystalline phases that form within a layer (e.g. tetragonal ZrO2, tetragonal HfO2, and orthorhombic HfO2) and at interfaces (e.g. monoclinic (Zr,Ti)O2). These phases are not bulk standard temperature and pressure phases. Their formation is understood in terms of self-assembly into the lowest energy structure in individual critical nuclei.

Dietary bioavailability of Cu adsorbed to colloidal hydrous ferric oxide

USGS Publications Warehouse

Cain, Daniel J.; Croteau, Marie-Noële; Fuller, Christopher C.

2013-01-01

The dietary bioavailability of copper (Cu) adsorbed to synthetic colloidal hydrous ferric oxide (HFO) was evaluated from the assimilation of 65Cu by two benthic grazers, a gastropod and a larval mayfly. HFO was synthesized, labeled with 65Cu to achieve a Cu/Fe ratio comparable to that determined in naturally formed HFO, and then aged. The labeled colloids were mixed with a food source (the diatom Nitzschia palea) to yield dietary 65Cu concentrations ranging from 211 to 2204 nmol/g (dry weight). Animals were pulse fed the contaminated diet and assimilation of 65Cu from HFO was determined following 1–3 days of depuration. Mass transfer of 65Cu from HFO to the diatom was less than 1%, indicating that HFO was the source of 65Cu to the grazers. Estimates of assimilation efficiency indicated that the majority of Cu ingested as HFO was assimilated (values >70%), implying that colloidal HFO potentially represents a source of dietary Cu to benthic grazers, especially where there is active formation and infiltration of these particles into benthic substrates.

Simultaneous Oxidation and Sequestration of As(III) from Water by Using Redox Polymer-Based Fe(III) Oxide Nanocomposite.

PubMed

Zhang, Xiaolin; Wu, Mengfei; Dong, Hao; Li, Hongchao; Pan, Bingcai

2017-06-06

Water decontamination from As(III) is an urgent but still challenging task. Herein, we fabricated a bifunctional nanocomposite HFO@PS-Cl for highly efficient removal of As(III), with active chlorine covalently binding spherical polystyrene host for in situ oxidation of As(III) to As(V), and Fe(III) hydroxide (HFO) nanoparticles (NPs) embedded inside for specific As(V) removal. HFO@PS-Cl could work effectively in a wide pH range (5-9), and other substances like sulfate, chloride, bicarbonate, silicate, and humic acid exert insignificant effect on As(III) removal. As(III) sequestration is realized via two pathways, that is, oxidation to As(V) by the active chlorine followed by specific As(V) adsorption onto HFO NPs, and As(III) adsorption onto HFO NPs followed by oxidation to As(V). The exhausted HFO@PS-Cl could be refreshed for cyclic runs with insignificant capacity loss by the combined regeneration strategy, that is, alkaline solution to rinse the adsorbed As(V) and NaClO solution to renew the host oxidation capability. In addition, fixed-bed experiments demonstrated that the HFO@PS-Cl column could generate >1760 bed volume (BV) effluent from a synthetic As(III)-containing groundwater to meet the drinking water standard (<10 μg As/L), whereas other two HFO nanocomposites, HFO@PS-N and HFO@D201 could only generate 450 and 600 BV effluents under otherwise identical conditions.

Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

NASA Astrophysics Data System (ADS)

Dai, Yuehua; Pan, Zhiyong; Wang, Feifei; Li, Xiaofeng

2016-08-01

The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM) by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained.

Application of diffusion barriers to high modulus fibers

NASA Technical Reports Server (NTRS)

Veltri, R. D.; Douglas, F. C.; Paradis, E. L.; Galasso, F. S.

1977-01-01

Barrier layers were coated onto high-modulus fibers, and nickel and titanium layers were overcoated as simulated matrix materials. The objective was to coat the high-strength fibers with unreactive selected materials without degrading the fibers. The fibers were tungsten, niobium, and single-crystal sapphire, while the materials used as barrier coating layers were Al2O3, Y2O3, TiC, ZrC, WC with 14% Co, and HfO2. An ion-plating technique was used to coat the fibers. The fibers were subjected to high-temperature heat treatments to evaluate the effectiveness of the barrier layer in preventing fiber-metal interactions. Results indicate that Al2O3, Y2O3, and HfO2 can be used as barrier layers to minimize the nickel-tungsten interaction. Further investigation, including thermal cycling tests at 1090 C, revealed that HfO2 is probably the best of the three.

Controlling particle properties in {{YBa}}_{2}{{Cu}}_{3}{{\\rm{O}}}_{7-\\delta } nanocomposites by combining PLD with an inert gas condensation system

NASA Astrophysics Data System (ADS)

Sparing, M.; Reich, E.; Hänisch, J.; Gottschall, T.; Hühne, R.; Fähler, S.; Rellinghaus, B.; Schultz, L.; Holzapfel, B.

2017-10-01

The critical current density {J}{{c}} in {{YBa}}2{{Cu}}3{{{O}}}7-δ thin films, which limits their application in external magnetic fields, can be enhanced by the introduction of artificial pinning centers such as non-superconducting nanoparticles inducing additional defects and local strain in the superconducting matrix. To understand the correlation between superconductivity, defect structures and particles, a controlled integration of particles with adjustable properties is essential. A powerful technique for the growth of isolated nanoparticles in the range of 10 nm is dc-magnetron sputtering in an inert gas flow. The inert gas condensation (IGC) of particles allows for an independent control of both the particle diameter distribution and the areal density. We report on the integration of such gas-phase-condensed {{HfO}}2 nanoparticles into pulsed laser deposited (PLD) {{YBa}}2{{Cu}}3{{{O}}}7-δ thin film multilayers with a combined PLD-IGC system. The particles and the structure of the multilayers are analyzed by transmission electron microscopy on cross-sectional FIB lamellae. As a result of the IGC particle implementation, randomly as well as biaxially oriented {{BaHfO}}3 precipitates are formed in the {{YBa}}2{{Cu}}3{{{O}}}7-δ thin films. With as few as three interlayers of nanoparticles, the pinning force density is enhanced in the low-field region.

Distribution of electron traps in SiO2/HfO2 nMOSFET

NASA Astrophysics Data System (ADS)

Xiao-Hui, Hou; Xue-Feng, Zheng; Ao-Chen, Wang; Ying-Zhe, Wang; Hao-Yu, Wen; Zhi-Jing, Liu; Xiao-Wei, Li; Yin-He, Wu

2016-05-01

In this paper, the principle of discharge-based pulsed I-V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO2 layer have been extracted. Two peaks are observed, which are located at ΔE ˜ -1.0 eV and -1.43 eV, respectively. It is found that the former one is close to the SiO2/HfO2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).

Microwave digestion-assisted HFO/biochar adsorption to recover phosphorus from swine manure.

PubMed

Zhang, Tao; Xu, Haoyu; Li, Huanhuan; He, Xinyue; Shi, Yuanji; Kruse, Andrea

2018-04-15

A sustainable management option for dealing with waste straw is to pyrolyze it to create biochar, which can then be used as a sorbent in pollution treatments, such as the recovery of phosphorus (P) from swine manure. However, the inability to directly capture soluble organic P (OP) and sparingly soluble P and the low selectivity of biochar remain key issues in this process. To overcome these, we investigated a microwave (MW) digestion pretreatment with a HFO/biochar adsorption process. The MW digestion-assisted treatment showed good performance for the solubilization of OP and sparingly soluble P. Optimized conditions (temperature=348K, time=45min, H 2 O 2 =3mL/30mL, HCl=0.13%) achieved an inorganic phosphorus (IP) release ratio of 83.98% and a total phosphorus (TP) release ratio of 91.83%. The P adsorption on the HFO/biochar was confirmed to follow pseudo-second-order kinetics, indicating that the P adsorption process was mainly controlled by chemical processes. The Freundlich model offered the best fit to the experimental data. The maximum amount of P adsorbed on HFO/biochar was in the range of 51.71-56.15mg/g. Thermodynamic calculations showed that the P adsorption process was exothermic, spontaneous, and increased the disorder in the system. Saturated adsorbed HFO/biochar was able to continually release P and was most suitable for use in an alkaline soil. The amount of P released from saturated adsorbed HFO/biochar reached 8.16mg/g after five interval extractions. A P mass balance indicated that 8.76% of the TP was available after the solubilization, capture, and recovery processes. Copyright © 2017 Elsevier B.V. All rights reserved.

Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

PubMed

Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

2011-05-13

The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.

Stable organic thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin

Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperatureovertimeperiods upto5.9×105 s do not vary monotonically andmore » remain below 0.2 V in microcrystalline OTFTs (mc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V-1 s-1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies.« less

Stable organic thin-film transistors

DOE PAGES

Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; ...

2018-01-12

Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperatureovertimeperiods upto5.9×105 s do not vary monotonically andmore » remain below 0.2 V in microcrystalline OTFTs (mc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V-1 s-1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies.« less

Stable organic thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin

2018-01-01

Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperatureovertimeperiods upto5.9×105 s do not vary monotonically andmore » remain below 0.2 V in microcrystalline OTFTs (mc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies.« less

Stable organic thin-film transistors

PubMed Central

Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard

2018-01-01

Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

Rates of arsenopyrite oxidation by oxygen and Fe(III) at pH 1.8-12.6 and 15-45 degrees C.

PubMed

Yu, Yunmei; Zhu, Yongxuan; Gao, Zhenmin; Gammons, Christopher H; Li, Denxian

2007-09-15

The oxidation rate of arsenopyrite by dissolved oxygen was measured using a mixed flow reactor at dissolved O2 concentrations of 0.007-0.77 mM, pH 1.8-12.6, and temperatures of 15-45 degrees C. As(III) was the dominant redox species (>75%) in the experimental system, and the As(III)/As(V) ratio of effluent waters did not change with pH. The results were used to derive the following rate law expression (valid between pH 1.8 and 6.4): r = 10((-2211 +/- 57)T) (mO2)(0.45 +/- 0.05), where r is the rate of release of dissolved As in mol m(-2) s(-1) and T is in Kelvin. Activation energies (Ea) for oxidation of arsenopyrite by 02 at pH 1.8 and 5.9 are 43 and 57 kJ/mol, respectively, and they compare to an Ea value of 16 kJ/mol for oxidation by Fe(III) at pH 1.8. Apparent As release rates passed through a minimum in the pH range 7-8, which may have been due to oxidation of Fe2+ to hydrous ferric oxide (HFO) with attenuation of dissolved As onto the freshly precipitated HFO.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-05-01

In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition.

PubMed

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-12-01

In situ-formed SiO 2 was introduced into HfO 2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO 2 /SiO 2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO 2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO 2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10 -3 A/cm 2 at gate bias of V fb  + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO 2 /SiO 2 /Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO 2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

Analytical method validation for the determination of 2,3,3,3-tetrafluoropropene in air samples using gas chromatography with flame ionization detection.

PubMed

Mawn, Michael P; Kurtz, Kristine; Stahl, Deborah; Chalfant, Richard L; Koban, Mary E; Dawson, Barbara J

2013-01-01

A new low global warming refrigerant, 2,3,3,3-tetrafluoro propene, or HFO-1234yf, has been successfully evaluated for automotive air conditioning, and is also being evaluated for stationary refrigeration and air conditioning systems. Due to the advantageous environmental properties of HFO-1234yf versus HFC-134a, coupled with its similar physical properties and system performance, HFO-1234yf is also being evaluated to replace HFC-134a in refrigeration applications where neat HFC-134a is currently used. This study reports on the development and validation of a sampling and analytical method for the determination of HFO-1234yf in air. Different collection media were screened for desorption and simulated sampling efficiency with three-section (350/350/350 mg) Anasorb CSC showing the best results. Therefore, air samples were collected using two 3-section Anasorb CSC sorbent tubes in series at 0.02 L/min for up to 8 hr for sample volumes of up to 9.6 L. The sorbent tubes were extracted in methylene chloride, and analyzed by gas chromatography with flame ionization detection. The method was validated from 0.1× to 20× the target level of 0.5 ppm (2.3 mg/m(3)) for a 9.6 L air volume. Desorption efficiencies for HFO-1234yf were 88 to 109% for all replicates over the validation range with a mean overall recovery of 93%. Simulated sampling efficiencies ranged from 87 to 104% with a mean of 94%. No migration or breakthrough to the back tube was observed under the sampling conditions evaluated. HFO-1234yf samples showed acceptable storage stability on Anasorb CSC sorbent up to a period of 30 days when stored under ambient, refrigerated, or frozen temperature conditions.

Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

NASA Astrophysics Data System (ADS)

Sales, T. S. N.; Cavalcante, F. H. M.; Bosch-Santos, B.; Pereira, L. F. D.; Cabrera-Pasca, G. A.; Freitas, R. S.; Saxena, R. N.; Carbonari, A. W.

2017-05-01

In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2) nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) with electron back scattering diffraction (EBSD), and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%).

Electronic structure and relative stability of the coherent and semi-coherent HfO2/III-V interfaces

NASA Astrophysics Data System (ADS)

Lahti, A.; Levämäki, H.; Mäkelä, J.; Tuominen, M.; Yasir, M.; Dahl, J.; Kuzmin, M.; Laukkanen, P.; Kokko, K.; Punkkinen, M. P. J.

2018-01-01

III-V semiconductors are prominent alternatives to silicon in metal oxide semiconductor devices. Hafnium dioxide (HfO2) is a promising oxide with a high dielectric constant to replace silicon dioxide (SiO2). The potentiality of the oxide/III-V semiconductor interfaces is diminished due to high density of defects leading to the Fermi level pinning. The character of the harmful defects has been intensively debated. It is very important to understand thermodynamics and atomic structures of the interfaces to interpret experiments and design methods to reduce the defect density. Various realistic gap defect state free models for the HfO2/III-V(100) interfaces are presented. Relative energies of several coherent and semi-coherent oxide/III-V semiconductor interfaces are determined for the first time. The coherent and semi-coherent interfaces represent the main interface types, based on the Ga-O bridges and As (P) dimers, respectively.

The electrical and interfacial properties of metal-high-k oxide-semiconductor field effect transistors with CeO2/HfO2 laminated gate dielectrics

NASA Astrophysics Data System (ADS)

Chang, Ingram Yin-ku; Chen, Chun-Heng; Chiu, Fu-Chien; Lee, Joseph Ya-min

2007-11-01

Metal-oxide-semiconductor field-effect transistors with CeO2/HfO2 laminated gate dielectrics were fabricated. The transistors have a subthreshold slope of 74.9mV/decade. The interfacial properties were measured using gated diodes. The surface state density Dit was 9.78×1011cm-2eV-1. The surface-recombination velocity (s0) and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ) measured from the gated diode were about 6.11×103cm /s and 1.8×10-8s, respectively. The effective capture cross section of surface state (σs) extracted using the subthreshold-swing measurement and the gated diode was about 7.69×10-15cm2. The effective electron mobility of CeO2/HfO2 laminated gated transistors was determined to be 212cm2/Vs.

Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction

NASA Astrophysics Data System (ADS)

Dong, Zhipeng; Cao, Xi; Wu, Tong; Guo, Jing

2018-03-01

Ferroelectric tunnel junctions (FTJs) have been intensively explored for future low power data storage and information processing applications. Among various ferroelectric (FE) materials studied, HfO2 and H0.5Zr0.5O2 (HZO) have the advantage of CMOS process compatibility. The validity of the simple effective mass approximation, for describing the tunneling process in these materials, is examined by computing the complex band structure from ab initio simulations. The results show that the simple effective mass approximation is insufficient to describe the tunneling current in HfO2 and HZO materials, and quantitative accurate descriptions of the complex band structures are indispensable for calculation of the tunneling current. A compact k . p Hamiltonian is parameterized to and validated by ab initio complex band structures, which provides a method for efficiently and accurately computing the tunneling current in HfO2 and HZO. The device characteristics of a metal/FE/metal structure and a metal/FE/semiconductor (M-F-S) structure are investigated by using the non-equilibrium Green's function formalism with the parameterized effective Hamiltonian. The result shows that the M-F-S structure offers a larger resistance window due to an extra barrier in the semiconductor region at off-state. A FTJ utilizing M-F-S structure is beneficial for memory design.

Mercury (II) reduction and co-precipitation of metallic mercury on hydrous ferric oxide in contaminated groundwater.

PubMed

Richard, Jan-Helge; Bischoff, Cornelia; Ahrens, Christian G M; Biester, Harald

2016-01-01

Mercury (Hg) speciation and sorption analyses in contaminated aquifers are useful for understanding transformation, retention, and mobility of Hg in groundwater. In most aquifers hydrous ferric oxides (HFOs) are among the most important sorbents for trace metals; however, their role in sorption or mobilization of Hg in aquifers has been rarely analyzed. In this study, we investigated Hg chemistry and Hg sorption to HFO under changing redox conditions in a highly HgCl2-contaminated aquifer (up to 870μgL(-1) Hg). Results from aqueous and solid phase Hg measurements were compared to modeled (PHREEQC) data. Speciation analyses of dissolved mercury indicated that Hg(II) forms were reduced to Hg(0) under anoxic conditions, and adsorbed to or co-precipitated with HFO. Solid phase Hg thermo-desorption measurements revealed that between 55 and 93% of Hg bound to HFO was elemental Hg (Hg(0)). Hg concentrations in precipitates reached more than 4 weight %, up to 7000 times higher than predicted by geochemical models that do not consider unspecific sorption to and co-precipitation of elemental Hg with HFO. The observed process of Hg(II) reduction and Hg(0) formation, and its retention and co-precipitation by HFO is thought to be crucial in HgCl2-contaminated aquifers with variable redox-conditions regarding the related decrease in Hg solubility (factor of ~10(6)), and retention of Hg in the aquifer. Copyright © 2015 Elsevier B.V. All rights reserved.

Study of structure and antireflective properties of LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 trilayers for UV applications

NASA Astrophysics Data System (ADS)

Marszalek, K.; Jaglarz, J.; Sahraoui, B.; Winkowski, P.; Kanak, J.

2015-01-01

The aim of this paper is to study antireflective properties of the tree-layer systems LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 deposited on heated optical glass substrates. The films were evaporated by the use two deposition techniques. In first method oxide films were prepared by means of e-gun evaporation in vacuum of 5 × 10-5 mbar in the presence of oxygen. The second was used for the deposition of fluoride films. They were obtained by means of thermal source evaporation. Simulation of reflectance was performed for 1M2H1L (Quarter Wavelength Optical Thickness) film stack on an optical quartz glass with the refractive index n = 1.46. The layer thickness was optimized to achieve the lowest light scattering from glass surface covered with dioxide and fluoride films. The values of the interface roughness were determined through atomic force microscopy measurements. The essence of performed calculation was to find minimum reflectance of light in wide ultraviolet region. The spectral dispersion of the refractive index needed for calculations was determined from ellipsometric measurements using the spectroscopic ellipsometer M2000. Additionally, the total reflectance measurements in integrating sphere coupled with Perkin Elmer 900 spectrophotometer were performed. These investigations allowed to determine the influence of such film features like surface and interface roughness on light scattering.

The prediction of a new high-pressure phase of hafnia using first-principles computations

NASA Astrophysics Data System (ADS)

Al-Khatatbeh, Y.; Tarawneh, K.; Hamad, B.

2018-02-01

Using density functional theory (DFT) calculations, we predicted a new high- pressure phase of hafnia (HfO2). We found the hexagonal phase (Ni2In-type structure; space group: P63 /mmc) to be the stable phase at ultrahigh pressures greater than ~386 GPa. Our findings are consistent with recent calculations performed on the similar dioxide ZrO2 [M. Durandurdu, J. Solid State Chem. 230, 233 (2015)] where this phase has been claimed to be the most stable at pressures greater than 380 GPa. The Birch-Murnaghan equation of state (BM- EOS) of the new phase shows that this phase is more compressible and less dense than Fe2P-type phase. Additionally, the hardness calculations using a scaling model confirmed that our newly predicted phase has a similar hardness compared to the other HfO2 phases, indicating that none of the HfO2 phases can be considered to be superhard.

High-dose neutron irradiation performance of dielectric mirrors

DOE PAGES

Nimishakavi Anantha Phani Kiran Kumar; Leonard, Keith J.; Jellison, Jr., Gerald Earle; ...

2015-05-01

The study presents the high-dose behavior of dielectric mirrors specifically engineered for radiation-tolerance: alternating layers of Al 2O 3/SiO 2 and HfO 2/SiO 2 were grown on sapphire substrates and exposed to neutron doses of 1 and 4 dpa at 458 10K in the High Flux Isotope Reactor (HFIR). In comparison to previously reported results, these higher doses of 1 and 4 dpa results in a drastic drop in optical reflectance, caused by a failure of the multilayer coating. HfO 2/SiO 2 mirrors failed completely when exposed to 1 dpa, whereas the reflectance of Al 2O 3/SiO 2 mirrors reducedmore » to 44%, eventually failing at 4 dpa. Transmission electron microscopy (TEM) observation of the Al 2O 3/SiO 2 specimens showed SiO 2 layer defects which increases size with irradiation dose. The typical size of each defect was 8 nm in 1 dpa and 42 nm in 4 dpa specimens. Buckling type delamination of the interface between the substrate and first layer was typically observed in both 1 and 4 dpa HfO 2/SiO 2 specimens. Composition changes across the layers were measured in high resolution scanning-TEM mode using energy dispersive spectroscopy. A significant interdiffusion between the film layers was observed in Al 2O 3/SiO 2 mirror, though less evident in HfO 2/SiO 2 system. Lastly, the ultimate goal of this work is the provide insight into the radiation-induced failure mechanisms of these mirrors.« less

Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors.

PubMed

Zhang, Xiang; Zhao, Jianwen; Dou, Junyan; Tange, Masayoshi; Xu, Weiwei; Mo, Lixin; Xie, Jianjun; Xu, Wenya; Ma, Changqi; Okazaki, Toshiya; Cui, Zheng

2016-09-01

P-type and n-type top-gate carbon nanotube thin-film transistors (TFTs) can be selectively and simultaneously fabricated on the same polyethylene terephthalate (PET) substrate by tuning the types of polymer-sorted semiconducting single-walled carbon nanotube (sc-SWCNT) inks, along with low temperature growth of HfO 2 thin films as shared dielectric layers. Both the p-type and n-type TFTs show good electrical properties with on/off ratio of ≈10 5 , mobility of ≈15 cm 2 V -1 s -1 , and small hysteresis. Complementary metal oxide semiconductor (CMOS)-like logic gates and circuits based on as-prepared p-type and n-type TFTs have been achieved. Flexible CMOS-like inverters exhibit large noise margin of 84% at low voltage (1/2 V dd = 1.5 V) and maximum voltage gain of 30 at V dd of 1.5 V and low power consumption of 0.1 μW. Both of the noise margin and voltage gain are one of the best values reported for flexible CMOS-like inverters at V dd less than 2 V. The printed CMOS-like inverters work well at 10 kHz with 2% voltage loss and delay time of ≈15 μs. A 3-stage ring oscillator has also been demonstrated on PET substrates and the oscillation frequency of 3.3 kHz at V dd of 1 V is achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advanced TEM characterization of oxide nanoparticles in ODS Fe–12Cr–5Al alloys

DOE PAGES

Unocic, Kinga A; Hoelzer, David T; Pint, Bruce A

2016-01-01

For oxide nanoparticles present in three oxide-dispersion-strengthened (ODS) Fe–12Cr–5Al alloys containing additions of (1) Y 2O 3 (125Y), (2) Y 2O 3 + ZrO 2 (125YZ), and (3) Y 2O 3 + HfO 2 (125YH), were investigated using transmission and scanning transmission electron microscopy. Furthermore, in all three alloys nano-sized (<3.5 nm) oxide particles distributed uniformly throughout the microstructure were characterized using advanced electron microscopy techniques. In the 125Y alloy, mainly Al 2O 3 and yttrium–aluminum garnet (YAG) phases (Y 3Al 5O 12) were present, while in the 125YZ alloy, additional Zr(C,N) precipitates were identified. The 125YH alloy had themore » most complex precipitation sequence whereby in addition to the YAG and Al 2O 3 phases, Hf(C,N), Y 2Hf 2O 7, and HfO 2 precipitates were also found. The presence of HfO 2 was mainly due to the incomplete incorporation of HfO 2 powder during mechanical alloying of the 125YH alloy. The alloy having the highest total number density of the oxides, the smallest grain size, and the highest Vickers hardness was the 125YZ alloy indicating, that Y 2O 3 + ZrO 2 additions had the strongest effect on grain size and tensile properties. Finally, high-temperature mechanical testing will be addressed in the near future, while irradiation studies are underway to investigate the irradiation resistance of these new ODS FeCrAl alloys.« less

Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

NASA Astrophysics Data System (ADS)

Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

2018-01-01

The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

Search for d0-Magnetism in Amorphous MB6 (M = Ca, Sr, Ba) Thin Films

NASA Astrophysics Data System (ADS)

Suter, Andreas; Ackland, Karl; Stilp, Evelyn; Prokscha, Thomas; Salman, Zaher; Coey, Michael

In the past decade there have been various reports on insulating or semi-conducting compounds showing weak ferromagnetic-like properties, even though none of their constituent have partially occupied d or f shells. Among them are HfO2 [1], highly oriented pyrolytic graphite [2], CaB2C2 [3], CaB6 [4,5], and ZnO2 [6]. From the very beginning it has been speculated that lattice defects might play a significant role. These effects can potentially be amplified when these materials are grown in thin film form, due to strain and interface effects. With low-energy μSR (LE-μSR) we studied various amorphous thin films of alkaline earth hexaborides MB6 (M = Ca, Sr, Ba) grown on Al2O3. Furthermore, we studied the starting materials which were used for the pulsed laser deposition (PLD) targets for the films with bulk μSR to ensure the quality of these powders. Similar to the results in Ref. [5] we find an increased second moment of the static width (ZF/LF dynamic Kubo-Toyabe function) compared to the nuclear width which suggest a very weak magnetic contribution which must originate from the electronic system (defect polarization, grain boundary effects, etc.). Two complications arise from the fact that a strong quadrupolar level crossing resonance is found in the hexaborides at rather low field values, and muon diffusion sets in at rather low temperature. The thin film results demonstrate a strong suppression of the muon diffusion which makes it more suitable to search for weak magnetic signatures. Indeed we find essentially a temperature independent second moment equal to the low temperature value found in the starting powders. This indicates that the weak magnetic state is stabilized up to much higher temperatures.

A PK-PD model of ketamine-induced high-frequency oscillations

NASA Astrophysics Data System (ADS)

Flores, Francisco J.; Ching, ShiNung; Hartnack, Katharine; Fath, Amanda B.; Purdon, Patrick L.; Wilson, Matthew A.; Brown, Emery N.

2015-10-01

Objective. Ketamine is a widely used drug with clinical and research applications, and also known to be used as a recreational drug. Ketamine produces conspicuous changes in the electrocorticographic (ECoG) signals observed both in humans and rodents. In rodents, the intracranial ECoG displays a high-frequency oscillation (HFO) which power is modulated nonlinearly by ketamine dose. Despite the widespread use of ketamine there is no model description of the relationship between the pharmacokinetic-pharmacodynamics (PK-PDs) of ketamine and the observed HFO power. Approach. In the present study, we developed a PK-PD model based on estimated ketamine concentration, its known pharmacological actions, and observed ECoG effects. The main pharmacological action of ketamine is antagonism of the NMDA receptor (NMDAR), which in rodents is accompanied by an HFO observed in the ECoG. At high doses, however, ketamine also acts at non-NMDAR sites, produces loss of consciousness, and the transient disappearance of the HFO. We propose a two-compartment PK model that represents the concentration of ketamine, and a PD model based in opposing effects of the NMDAR and non-NMDAR actions on the HFO power. Main results. We recorded ECoG from the cortex of rats after two doses of ketamine, and extracted the HFO power from the ECoG spectrograms. We fit the PK-PD model to the time course of the HFO power, and showed that the model reproduces the dose-dependent profile of the HFO power. The model provides good fits even in the presence of high variability in HFO power across animals. As expected, the model does not provide good fits to the HFO power after dosing the pure NMDAR antagonist MK-801. Significance. Our study provides a simple model to relate the observed electrophysiological effects of ketamine to its actions at the molecular level at different concentrations. This will improve the study of ketamine and rodent models of schizophrenia to better understand the wide and divergent range of effects that ketamine has.

Deposition and rainwater concentrations of trifluoroacetic acid in the United States from the use of HFO-1234yf

NASA Astrophysics Data System (ADS)

Kazil, J.; McKeen, S.; Kim, S.-W.; Ahmadov, R.; Grell, G. A.; Talukdar, R. K.; Ravishankara, A. R.

2014-12-01

Currently, HFC-134a (1,1,1,2-tetrafluoroethane) is the most common refrigerant in automobile air conditioners. This high global warming potential substance (100 year GWP of 1370) will likely be phased out and replaced with HFO-1234yf (2,3,3,3-tetrafluoropropene) that has a 100 year GWP of 4. HFO-1234yf will be oxidized to produce trifluoroacetic acid (TFA) in clouds. TFA, a mildly toxic substance with detrimental effects on some aquatic organisms at high concentrations (≥100μgL-1), would be transported by rain to the surface and enter bodies of water. We investigated the dry and wet deposition of TFA from HFO-1234yf over the contiguous USA using the Advanced Research Weather Research and Forecasting model (ARW) with interactive chemical, aerosol, and cloud processes (WRF/Chem) model. Special focus was placed on emissions from three continental USA regions with different meteorological characteristics. WRF/Chem simulated meteorology, cloud processes, gas and aqueous phase chemistry, and dry and wet deposition between May and September 2006. The model reproduced well the multimonth total sulfate wet deposition (4% bias) and its spatial variability (r = 0.86) observed by the National Atmospheric Deposition Program. HFO-1234yf emissions were obtained by assuming the number of automobile air conditioners to remain unchanged, and substituting HFO-1234yf, mole-per-mole for HFC-134a. Our estimates of current HFC-134a emissions were in agreement with field data. Average TFA rainwater concentration was 0.89μgL-1, with peak values of 7.8μgL-1, for the May-September 2006 period over the contiguous USA. TFA rainwater concentrations over the dry western USA were often significantly higher, but wet-deposited TFA amounts remained relatively low at such locations.

Highly efficient removal of heavy metals by polymer-supported nanosized hydrated Fe(III) oxides: behavior and XPS study.

PubMed

Pan, Bingjun; Qiu, Hui; Pan, Bingcai; Nie, Guangze; Xiao, Lili; Lv, Lu; Zhang, Weiming; Zhang, Quanxing; Zheng, Shourong

2010-02-01

The present study developed a polymer-based hybrid sorbent (HFO-001) for highly efficient removal of heavy metals [e.g., Pb(II), Cd(II), and Cu(II)] by irreversibly impregnating hydrated Fe(III) oxide (HFO) nanoparticles within a cation-exchange resin D-001 (R-SO(3)Na), and revealed the underlying mechanism based on X-ray photoelectron spectroscopy (XPS) study. HFO-001 combines the excellent handling, flow characteristics, and attrition resistance of conventional cation-exchange resins with the specific affinity of HFOs toward heavy metal cations. As compared to D-001, sorption selectivity of HFO-001 toward Pb(II), Cu(II), and Cd(II) was greatly improved from the Ca(II) competition at greater concentration. Column sorption results indicated that the working capacity of HFO-001 was about 4-6 times more than D-001 with respect to removal of three heavy metals from simulated electroplating water (pH approximately 4.0). Also, HFO-001 is particularly effective in removing trace Pb(II) and Cd(II) from simulated natural waters to meet the drinking water standard, with treatment volume orders of magnitude higher than D-001. The superior performance of HFO-001 was attributed to the Donnan membrane effect exerted by the host D-001 as well as to the impregnated HFO nanoparticles of specific interaction toward heavy metal cations, as further confirmed by XPS study on lead sorption. More attractively, the exhausted HFO-001 beads can be effectively regenerated by HCl-NaCl solution (pH 3) for repeated use without any significant capacity loss. (c) 2009 Elsevier Ltd. All rights reserved.

Trace Metals in Soot and PM2.5 from Heavy-Fuel-Oil Combustion in a Marine Engine

PubMed Central

2018-01-01

Heavy fuel oil (HFO) particulate matter (PM) emitted by marine engines is known to contain toxic heavy metals, including vanadium (V) and nickel (Ni). The toxicity of such metals will depend on the their chemical state, size distribution, and mixing state. Using online soot-particle aerosol mass spectrometry (SP-AMS), we quantified the mass of five metals (V, Ni, Fe, Na, and Ba) in HFO-PM soot particles produced by a marine diesel research engine. The in-soot metal concentrations were compared to in-PM2.5 measurements by inductively coupled plasma-optical emission spectroscopy (ICP-OES). We found that <3% of total PM2.5 metals was associated with soot particles, which may still be sufficient to influence in-cylinder soot burnout rates. Since these metals were most likely present as oxides, whereas studies on lower-temperature boilers report a predominance of sulfates, this result implies that the toxicity of HFO PM depends on its combustion conditions. Finally, we observed a 4-to-25-fold enhancement in the ratio V:Ni in soot particles versus PM2.5, indicating an enrichment of V in soot due to its lower nucleation/condensation temperature. As this enrichment mechanism is not dependent on soot formation, V is expected to be generally enriched within smaller HFO-PM particles from marine engines, enhancing its toxicity. PMID:29688717

Microstructure and properties of hard and optically transparent HfO2 films prepared by high-rate reactive high-power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Patterson, Burkley Delesdernier

Hafnium Dioxide (HfO2) has an extraordinary high bulk modulus, high hardness, high chemical stability, high melting point and high thermal stability. This material can be used as protective coatings for application involving high temperature environments. HfO2 films were fabricated on Si using high-rate reactive high-power impulse magnetron sputtering (HiPIMS) using different deposition-averaged target power density and voltage pulse durations t1. Five HfO2 films were prepared with (1) t1 = 25 mus, =7.6 Wcm-2 (T25S7), (2) t 1 = 100 mus, =7.2 Wcm-2 (T100S7), (3) t1 = 200 mus, =7.3 Wcm-2 (T200S7), (4) t1 = 200 mus, =18 Wcm-2 (T200S18) and (5) t1 = 200 mus, =54 Wcm-2 (T200S54). Atomic force microscopy (AFM) images of the T200S54, T200S18 and T200S7 films exhibit a coarser granular structure with a similar grain size varying from 25 nm to 120 nm in diameter and an average grain size of ˜70 nm. AFM images of the T25S7 and T100S7 films show smaller granular structures compared to the other three films. Transmission electron microscopy (TEM) studies show that all films are composed of an interlayer next to the Si interface followed by a nano-columnar structure layer. The interlayer structure of the films consists of a population of lower density nanoscale regions. A reduction in t1 and in films T200S54, T200S18, T200S7 and T100S7 caused an increase in the interlayer thickness and a decrease in the width of the nano-columnar structures from ˜46 nm to ˜21 nm. This microstructural change was accompanied by a concomitant change of the grain boundary structure from tight and interlocking in films T200S54 and T200S18, to rough and thicker (˜1 nm) boundaries in films T200S7 and T100S7. Film T25S7 exhibited an entirely different microstructure composed of a multilayered interlayer (˜3 nm) and nano-columnar (˜15 nm) structure. Films prepared with large t1 (200 mus) have a monoclinic HfO 2 structure and that with small t1 (25 mus) an orthorhombic HfO 2 structure. Film prepared with an intermediate t1 value (100 mus) exhibited a mixture of both monoclinic and orthorhombic phases. A high hardness of 17.6-17.0 GPa was shown for films with a monoclinic HfO2 structure. The films exhibited a refractive index of 2.02-2.11 and an extinction coefficient between ≥≤2x10-3 and 0.1x10-3 (both at a wavelength of 550 nm). High optical quality was achieved for films T200S54 and T200S18 owing to the presence of a dense microstructure with sharp and interlocking grain boundaries.

ARSENIC CONTAMINATION AT THE INDUSTRI-PLEX SUPERFUND SITE, WOBURN, MA

EPA Science Inventory

Arsenate coprecipitated with hydrous ferric oxide (HFO) was stabilized against dissolution during transformation of HFO to more crystalline iron (hydr)oxides. The rate of arsenate stabilization approximately coincided with the rate of HFO transformation at pH 6 and 40 ?C. Compa...

Geometric confinement effects on the metal-insulator transition temperature and stress relaxation in VO2 thin films grown on silicon

NASA Astrophysics Data System (ADS)

Viswanath, Changhyun Ko, B.; Yang, Zheng; Ramanathan, Shriram

2011-03-01

VO2 undergoes a sharp metal-insulator transition at ˜67 °C with several orders of change in conductivity and optical transmittance. Understanding and control of the properties of vanadium oxide layers grown on technologically relevant substrates such as Si (100) single crystals is therefore of great interest. In this work, we show tunability of metal-insulator transition temperature as well as recoverable stress in VO2 thin films grown on Si substrate by introducing nanoscale atomic layer deposited HfO2 interfacial layers with no degradation in the resistance ratio. For a confined VO2 film, the metal-insulator transition temperature is suppressed by ˜16 °C and the recoverable stress is 150 MPa, compared to 400 MPa for a bare film. These observations are further correlated with in situ variable temperature measurement of stress changes occurring during the phase transition. Structural and microstructural studies on the various samples have been carried out by x ray diffraction and cross-sectional transmission electron microscopy. The strategy of tuning the metal-insulator transition characteristics by nanoscale interfacial dielectrics is of broader relevance in design of programmable materials and integration into solid state devices for electronics.

Enhanced Al and Zn removal from coal-mine drainage during rapid oxidation and precipitation of Fe oxides at near-neutral pH

USGS Publications Warehouse

Burrows, Jill E.; Cravotta, Charles A.; Peters, Stephen C.

2017-01-01

Net-alkaline, anoxic coal-mine drainage containing ∼20 mg/L FeII and ∼0.05 mg/L Al and Zn was subjected to parallel batch experiments: control, aeration (Aer 1 12.6 mL/s; Aer 2 16.8 mL/s; Aer 3 25.0 mL/s), and hydrogen peroxide (H2O2) to test the hypothesis that aeration increases pH, FeII oxidation, hydrous FeIII oxide (HFO) formation, and trace-metal removal through adsorption and coprecipitation with HFO. During 5.5-hr field experiments, pH increased from 6.4 to 6.7, 7.1, 7.6, and 8.1 for the control, Aer 1, Aer 2, and Aer 3, respectively, but decreased to 6.3 for the H2O2 treatment. Aeration accelerated removal of dissolved CO2, Fe, Al, and Zn. In Aer 3, dissolved Al was completely removed within 1 h, but increased to ∼20% of the initial concentration after 2.5 h when pH exceeded 7.5. H2O2 promoted rapid removal of all dissolved Fe and Al, and 13% of dissolved Zn.Kinetic modeling with PHREEQC simulated effects of aeration on pH, CO2, Fe, Zn, and Al. Aeration enhanced Zn adsorption by increasing pH and HFO formation while decreasing aqueous CO2 available to form ZnCO30 and Zn(CO3)22− at high pH. Al concentrations were inconsistent with solubility control by Al minerals or Al-containing HFO, but could be simulated by adsorption on HFO at pH < 7.5 and desorption at higher pH where Al(OH)4− was predominant. Thus, aeration or chemical oxidation with pH adjustment to ∼7.5 could be effective for treating high-Fe and moderate-Zn concentrations, whereas chemical oxidation without pH adjustment may be effective for treating high-Fe and moderate-Al concentrations.

RATES OF HYDROUS FERRIC OXIDE CRYSTALLIZATION AND THE INFLUENCE ON COPRECIPITATED ARSENATE

EPA Science Inventory

Arsenate coprecipitated with hydrous ferric oxide (HFO) was stabilized against dissolution during transformation of HFO to more crystalline iron (hydr)oxides. The rate of arsenate stabilization approximately coincided with the rate of HFO transformation at pH 6 and 40 ?C. Compa...

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics.

PubMed

Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

2015-11-14

Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors.

Enhanced removal of As (V) from aqueous solution using modified hydrous ferric oxide nanoparticles

PubMed Central

Huo, Lijuan; Zeng, Xibai; Su, Shiming; Bai, Lingyu; Wang, Yanan

2017-01-01

Hydrous ferric oxide (HFO) is most effective with high treatment capacity on arsenate [As(V)] sorption although its transformation and aggregation nature need further improvement. Here, HFO nanoparticles with carboxymethyl cellulose (CMC) or starch as modifier was synthesized for the purpose of stability improvement and As(V) removal from water. Comparatively, CMC might be the optimum stabilizer for HFO nanoparticles because of more effective physical and chemical stability. The large-pore structure, high surface specific area, and the non-aggregated nature of CMC-HFO lead to increased adsorption sites, and thus high adsorption capacities of As(V) without pre-treatment (355 mg·g−1), which is much greater than those reported in previous studies. Second-order equation and dual-mode isotherm model could be successfully used to interpret the sorption kinetics and isotherms of As(V), respectively. FTIR, XPS and XRD analyses suggested that precipitation and surface complexation were primary mechanisms for As(V) removal by CMC modified HFO nanoparticles. A surface complexation model (SCM) was used to simulate As adsorption over pH 2.5–10.4. The predominant adsorbed arsenate species were modeled as bidentate binuclear surface complexes at low pH and as monodentate complexes at high pH. The immobilized arsenic remained stable when aging for 270 d at room temperature. PMID:28098196

Enhanced removal of As (V) from aqueous solution using modified hydrous ferric oxide nanoparticles

NASA Astrophysics Data System (ADS)

Huo, Lijuan; Zeng, Xibai; Su, Shiming; Bai, Lingyu; Wang, Yanan

2017-01-01

Hydrous ferric oxide (HFO) is most effective with high treatment capacity on arsenate [As(V)] sorption although its transformation and aggregation nature need further improvement. Here, HFO nanoparticles with carboxymethyl cellulose (CMC) or starch as modifier was synthesized for the purpose of stability improvement and As(V) removal from water. Comparatively, CMC might be the optimum stabilizer for HFO nanoparticles because of more effective physical and chemical stability. The large-pore structure, high surface specific area, and the non-aggregated nature of CMC-HFO lead to increased adsorption sites, and thus high adsorption capacities of As(V) without pre-treatment (355 mg·g-1), which is much greater than those reported in previous studies. Second-order equation and dual-mode isotherm model could be successfully used to interpret the sorption kinetics and isotherms of As(V), respectively. FTIR, XPS and XRD analyses suggested that precipitation and surface complexation were primary mechanisms for As(V) removal by CMC modified HFO nanoparticles. A surface complexation model (SCM) was used to simulate As adsorption over pH 2.5-10.4. The predominant adsorbed arsenate species were modeled as bidentate binuclear surface complexes at low pH and as monodentate complexes at high pH. The immobilized arsenic remained stable when aging for 270 d at room temperature.

Unravelling the surface chemistry of metal oxide nanocrystals, the role of acids and bases.

PubMed

De Roo, Jonathan; Van den Broeck, Freya; De Keukeleere, Katrien; Martins, José C; Van Driessche, Isabel; Hens, Zeger

2014-07-09

We synthesized HfO2 nanocrystals from HfCl4 using a surfactant-free solvothermal process in benzyl alcohol and found that the resulting nanocrystals could be transferred to nonpolar media using a mixture of carboxylic acids and amines. Using solution (1)H NMR, FTIR, and elemental analysis, we studied the details of the transfer reaction and the surface chemistry of the resulting sterically stabilized nanocrystals. As-synthesized nanocrystals are charge-stabilized by protons, with chloride acting as the counterion. Treatment with only carboxylic acids does not lead to any binding of ligands to the HfO2 surface. On the other hand, we find that the addition of amines provides the basic environment in which carboxylic acids can dissociate and replace chloride. This results in stable, aggregate-free dispersions of HfO2 nanocrystals, sterically stabilized by carboxylate ligands. Moreover, titrations with deuterated carboxylic acid show that the charge on the carboxylate ligands is balanced by coadsorbed protons. Hence, opposite from the X-type/nonstoichiometric nanocrystals picture prevailing in literature, one should look at HfO2/carboxylate nanocrystals as systems where carboxylic acids are dissociatively adsorbed to bind to the nanocrystals. Similar results were obtained with ZrO2 NCs. Since proton accommodation on the surface is most likely due to the high Brønsted basicity of oxygen, our model could be a more general picture for the surface chemistry of metal oxide nanocrystals with important consequences on the chemistry of ligand exchange reactions.

Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2

PubMed Central

González, Gabriel; Kolosovas-Machuca, Eleazar Samuel; López-Luna, Edgar; Hernández-Arriaga, Heber; González, Francisco Javier

2015-01-01

In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance of the interdigital capacitor was optimized by coating the electrodes with a 60 nm layer of HfO2. An analytical solution of the capacitance was compared to electromagnetic simulations using COMSOL and with experimental measurements. Results show that modeling interdigital capacitors using Finite Element Method software such as COMSOL is effective in the design and electrical characterization of these transducers. PMID:25602271

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

PubMed Central

Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

2016-01-01

Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom electrodes. The XRD measurements for epitaxial film enabled us to investigate its detailed crystal structure including orientations of the film. The ferroelectricity was confirmed by electric displacement filed – electric filed hysteresis measurement, which revealed saturated polarization of 16 μC/cm2. Estimated spontaneous polarization based on the obtained saturation polarization and the crystal structure analysis was 45 μC/cm2. This value is the first experimental estimations of the spontaneous polarization and is in good agreement with the theoretical value from first principle calculation. Curie temperature was also estimated to be about 450 °C. This study strongly suggests that the HfO2-based materials are promising for various ferroelectric applications because of their comparable ferroelectric properties including polarization and Curie temperature to conventional ferroelectric materials together with the reported excellent scalability in thickness and compatibility with practical manufacturing processes. PMID:27608815

A PK-PD Model of Ketamine-Induced High-Frequency Oscillations

PubMed Central

Flores, Francisco J.; Ching, ShiNung; Hartnack, Katharine; Fath, Amanda B.; Purdon, Patrick L.; Wilson, Matthew A.; Brown, Emery N.

2017-01-01

Objective Ketamine is a widely used drug with clinical and research applications, and also known to be used as a recreational drug. Ketamine produces conspicuous changes in the electrocorticographic (ECoG) signals observed both in humans and rodents. In rodents, the intracranial ECoG displays a High-Frequency Oscillation (HFO) which power is modulated non-linearly by ketamine dose. Despite the widespread use of ketamine there is no model description of the relationship between the pharmacokinetic-pharmacodynamics (PK-PD) of ketamine and the observed HFO power. Approach In the present study, we developed a PK-PD model based on estimated ketamine concentration, its known pharmacological actions, and observed ECoG effects. The main pharmacological action of ketamine is antagonism of the NMDA receptor (NMDAR), which in rodents is accompanied by a high-frequency oscillation (HFO) observed in the ECoG. At high doses, however, ketamine also acts at non-NMDAR sites, produces loss of consciousness, and the transient disappearance of the HFO. We propose a two-compartment PK model that represents the concentration of ketamine, and a PD model based in opposing effects of the NMDAR and non-NMDAR actions on the HFO power. Main results We recorded ECoG from the cortex of rats after two doses of ketamine, and extracted the HFO power from the ECoG spectrograms. We fit the PK-PD model to the time course of the HFO power, and showed that the model reproduces the dose-dependent profile of the HFO power. The model provides good fits even in the presence of high variability in HFO power across animals. As expected, the model does not provide good fits to the HFO power after dosing the pure NMDAR antagonist MK-801. Significance Our study provides a simple model to relate the observed electrophysiological effects of ketamine to its actions at the molecular level at different concentrations. This will improve the study of ketamine and rodent models of schizophrenia to better understand the wide and divergent range of effects that ketamine has. PMID:26268223

Cathodoluminescence Study of Hafnium Oxide

NASA Astrophysics Data System (ADS)

Purcell, Emily; Hengehold, Robert; McClory, John

2011-10-01

Hafnium dioxide (HfO2) is increasingly being used in place of silicon oxide as a gate insulator in field effect transistors. This is primarily due to its high dielectric constant, κ, of 25. Samples of HfO2 were grown by either atomic layer deposition (ALD) or pulsed laser deposition (PLD), with the PLD samples having assorted substrate temperatures during deposition (300 C, 500 C, and 750 C). Cathodoluminescence (CL) was chosen as the technique used for studying these HfO2 samples. The CL system used was capable of beam energies ranging from 1 keV to 20 keV and beam currents ranging from 10 μA to 50 μA. A Monte Carlo calculation using CASINO software was performed in order to determine the beam energy for the desired depth of penetration. Measurements were taken at sample temperatures ranging from 7K (closed cycled cryostat) to 300K (room temperature), as well as at various beam energies and beam currents. Comparison will be made between the PLD and ALD spectra.

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

NASA Astrophysics Data System (ADS)

García, H.; González, M. B.; Mallol, M. M.; Castán, H.; Dueñas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigón, A.

2018-04-01

The γ-radiation effects on the electrical characteristics of metal-insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole-Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

PubMed

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Plant-wide modelling of phosphorus transformations in wastewater treatment systems: Impacts of control and operational strategies.

PubMed

Solon, K; Flores-Alsina, X; Kazadi Mbamba, C; Ikumi, D; Volcke, E I P; Vaneeckhaute, C; Ekama, G; Vanrolleghem, P A; Batstone, D J; Gernaey, K V; Jeppsson, U

2017-04-15

The objective of this paper is to report the effects that control/operational strategies may have on plant-wide phosphorus (P) transformations in wastewater treatment plants (WWTP). The development of a new set of biological (activated sludge, anaerobic digestion), physico-chemical (aqueous phase, precipitation, mass transfer) process models and model interfaces (between water and sludge line) were required to describe the required tri-phasic (gas, liquid, solid) compound transformations and the close interlinks between the P and the sulfur (S) and iron (Fe) cycles. A modified version of the Benchmark Simulation Model No. 2 (BSM2) (open loop) is used as test platform upon which three different operational alternatives (A 1 , A 2 , A 3 ) are evaluated. Rigorous sensor and actuator models are also included in order to reproduce realistic control actions. Model-based analysis shows that the combination of an ammonium ( [Formula: see text] ) and total suspended solids (X TSS ) control strategy (A 1 ) better adapts the system to influent dynamics, improves phosphate [Formula: see text] accumulation by phosphorus accumulating organisms (X PAO ) (41%), increases nitrification/denitrification efficiency (18%) and reduces aeration energy (E aeration ) (21%). The addition of iron ( [Formula: see text] ) for chemical P removal (A 2 ) promotes the formation of ferric oxides (X HFO-H , X HFO-L ), phosphate adsorption (X HFO-H,P , X HFO-L,P ), co-precipitation (X HFO-H,P,old , X HFO-L,P,old ) and consequently reduces the P levels in the effluent (from 2.8 to 0.9 g P.m -3 ). This also has an impact on the sludge line, with hydrogen sulfide production ( [Formula: see text] ) reduced (36%) due to iron sulfide (X FeS ) precipitation. As a consequence, there is also a slightly higher energy production (E production ) from biogas. Lastly, the inclusion of a stripping and crystallization unit (A 3 ) for P recovery reduces the quantity of P in the anaerobic digester supernatant returning to the water line and allows potential struvite ( [Formula: see text] ) recovery ranging from 69 to 227 kg.day -1 depending on: (1) airflow (Q stripping ); and, (2) magnesium ( [Formula: see text] ) addition. All the proposed alternatives are evaluated from an environmental and economical point of view using appropriate performance indices. Finally, some deficiencies and opportunities of the proposed approach when performing (plant-wide) wastewater treatment modelling/engineering projects are discussed. Copyright © 2017 Elsevier Ltd. All rights reserved.

Ferroelectric memory based on molybdenum disulfide and ferroelectric hafnium oxide

NASA Astrophysics Data System (ADS)

Yap, Wui Chung; Jiang, Hao; Xia, Qiangfei; Zhu, Wenjuan

Recently, ferroelectric hafnium oxide (HfO2) was discovered as a new type of ferroelectric material with the advantages of high coercive field, excellent scalability (down to 2.5 nm), and good compatibility with CMOS processing. In this work, we demonstrate, for the first time, 2D ferroelectric memories with molybdenum disulfide (MoS2) as the channel material and aluminum doped HfO2 as the ferroelectric gate dielectric. A 16 nm thick layer of HfO2, doped with 5.26% aluminum, was deposited via atomic layer deposition (ALD), then subjected to rapid thermal annealing (RTA) at 1000 °C, and the polarization-voltage characteristics of the resulting metal-ferroelectric-metal (MFM) capacitors were measured, showing a remnant polarization of 0.6 μC/cm2. Ferroelectric memories with embedded ferroelectric hafnium oxide stacks and monolayer MoS2 were fabricated. The transfer characteristics after program and erase pulses revealed a clear ferroelectric memory window. In addition, endurance (up to 10,000 cycles) of the devices were tested and effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, were observed. This research can potentially lead to advances of 2D materials in low-power logic and memory applications.

A thermodynamic model for the solubility of HfO2(am) in the aqueous K +– HCO 3 -– CO 3 2-–O -–H 2O system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rai, Dhanpat; Kitamura, Akira; Rosso, Kevin M.

Solubility of HfO2(am) was determined as a function of KHCO3 concentrations ranging from 0.001 mol·kg-1 to 0.1 mol·kg-1. The solubility of HfO2(am) increased dramatically with the increase in KHCO3 concentrations, indicating that Hf(IV) makes strong complexes with carbonate. Thermodynamic equilibrium constants for the formation of Hf-carbonate complexes were determined using both the Pitzer and SIT models. The dramatic increase in Hf concentrations with the increase in KHCO3 concentrations can best be described by the formation of Hf(OH-)2(CO3)22- and Hf(CO3)56-. The log10 K0 values for the reactions [Hf4++2CO32-+2OH-⇌Hf(OH)2(CO3)22-] and [Hf4++5CO32-⇌Hf(CO3)56-], based on the SIT model, were determined to be 44.53±0.46 andmore » 41.53±0.46, respectively, and based on the Pitzer model they were 44.56±0.48 and 40.20±0.48, respectively.« less

Technical Note: A simulation study on the feasibility of radiotherapy dose enhancement with calcium tungstate and hafnium oxide nano- and microparticles.

PubMed

Sherck, Nicholas J; Won, You-Yeon

2017-12-01

To assess the radiotherapy dose enhancement (RDE) potential of calcium tungstate (CaWO 4 ) and hafnium oxide (HfO 2 ) nano- and microparticles (NPs). A Monte Carlo simulation study was conducted to gauge their respective RDE potentials relative to that of the broadly studied gold (Au) NP. The study was warranted due to the promising clinical and preclinical studies involving both CaWO 4 and HfO 2 NPs as RDE agents in the treatment of various types of cancers. The study provides a baseline RDE to which future experimental RDE trends can be compared to. All three materials were investigated in silico with the software Penetration and Energy Loss of Positrons and Electrons (PENELOPE 2014) developed by Francesc Salvat and distributed in the United States by the Radiation Safety Information Computational Center (RSICC) at Oak Ridge National Laboratory. The work utilizes the extensively studied Au NP as the "gold standard" for a baseline. The key metric used in the evaluation of the materials was the local dose enhancement factor (DEF loc ). An additional metric used, termed the relative enhancement ratio (RER), evaluates material performance at the same mass concentrations. The results of the study indicate that Au has the strongest RDE potential using the DEF loc metric. HfO 2 and CaWO 4 both underperformed relative to Au with lower DEF loc of 2-3 × and 4-100 ×, respectively. The computational investigation predicts the RDE performance ranking to be: Au > HfO 2 > CaWO 4 . © 2017 American Association of Physicists in Medicine.

XAFS atomistic insight of the oxygen gettering in Ti/HfO 2 based OxRRAM

NASA Astrophysics Data System (ADS)

Viennet, R.; Roussel, H.; Rapenne, L.; Deschanvres, J. L.; Renevier, H.; Jousseaume, V.; Jalaguier, E.; Proietti, M. G.

2018-05-01

Hafnia-based resistive memories technology has come to maturation and acceded to the market of nonvolatile memories. Nevertheless, the physical mechanisms involved in resistive switching are not yet fully understood and the numerous ab initio simulations studies have few many atomic-scale experimental counterparts. In this study we investigate the oxygen migration mechanism from an amorphous HfO2 layer to the Ti cap layer at a local scale before and after a thermal treatment. X-ray absorption spectroscopy at the Ti K edge and Hf LIII edge has been performed on samples as-deposited and annealed in Ar at 400 ∘C to mimic the back-end-of-line thermal budget (BEOL) of CMOS technology. The short-range Ti and Hf environments have been determined, showing that annealing promotes the migration of O from HfO2 to Ti, the amount of which is quantified. This provokes an expansion and an increase of atomic disorder in the Ti lattice. The nature of the oxygen gettering mechanism by the Ti metal is understood by comparing samples with increasing Ti-capping thickness. We show that the Ti getter effect has to be activated by thermal treatment and that the O diffusion takes place in a region of a few nanometers close to the Ti /HfO2 interface. Therefore, the thermal budget history and the Ti cap-layer thickness determine the oxygen vacancy content in the HfO2 layer, which in turn controls the electrical properties, especially the forming operation.

Monoclinic to cubic phase transformation and photoluminescence properties in Hf1-xSmxO2 (x = 0-0.12) nanoparticles

NASA Astrophysics Data System (ADS)

Kumar, Sandeep; Rai, S. B.; Rath, Chandana

2018-02-01

Bulk hafnium oxide (HfO2) exhibits the monoclinic phase at room temperature which transforms to tetragonal and cubic phases at 1700 and 2600 °C, respectively, under ambient conditions. For the first time, we observe a monoclinic to stable cubic phase transformation at room temperature in nanoparticles of HfO2 by incorporating Sm3+ ions up to 12 at. %. Although the monoclinic structure is retained at 1 at. % of Sm, a mixed phase of monoclinic and cubic is observed at intermediate Sm concentration (5-11 at. %). Le-Bail profile refinement of X-ray diffraction patterns confirms the monoclinic to cubic phase transformation with increasing Sm3+ ion concentration. While the significant difference in ionic radii of Sm3+ and Hf4+ ion induces strain in the lattice above 9 at. %, a lower valency of Sm produces oxygen vacancy leading to 8-fold coordination with Sm3+ ion and stabilizes the cubic phase at room temperature. Not only the particle size obtained from transmission electron micrograph (TEM) matches well with the size calculated from the Williamson-Hall plot, the lattice spacing estimated from high resolution TEM also confirms the monoclinic and cubic phases in HfO2 and Hf0.88Sm0.12O2, respectively. Apart from phase transformation induced by Sm3+ ions, photoluminescence studies demonstrate an excellent emission in near green and red regions in Hf1-xSmxO2 nanoparticles. A schematic energy band diagram has been proposed based on the excitation and emission processes involved in HfO2 and Hf0.99Sm0.01O2 nanoparticles.

Interactions of hydrogen with amorphous hafnium oxide

NASA Astrophysics Data System (ADS)

Kaviani, Moloud; Afanas'ev, Valeri V.; Shluger, Alexander L.

2017-02-01

We used density functional theory (DFT) calculations to study the interaction of hydrogen with amorphous hafnia (a -HfO2 ) using a hybrid exchange-correlation functional. Injection of atomic hydrogen, its diffusion towards electrodes, and ionization can be seen as key processes underlying charge instability of high-permittivity amorphous hafnia layers in many applications. Hydrogen in many wide band gap crystalline oxides exhibits negative-U behavior (+1 and -1 charged states are thermodynamically more stable than the neutral state) . Our results show that in a -HfO2 hydrogen is also negative-U, with charged states being the most thermodynamically stable at all Fermi level positions. However, metastable atomic hydrogen can share an electron with intrinsic electron trapping precursor sites [Phys. Rev. B 94, 020103 (2016)., 10.1103/PhysRevB.94.020103] forming a [etr -+O -H ] center, which is lower in energy on average by about 0.2 eV. These electron trapping sites can affect both the dynamics and thermodynamics of the interaction of hydrogen with a -HfO2 and the electrical behavior of amorphous hafnia films in CMOS devices.

Photoluminescence properties of Eu3+ doped HfO2 coatings formed by plasma electrolytic oxidation of hafnium

NASA Astrophysics Data System (ADS)

Stojadinović, Stevan; Tadić, Nenad; Ćirić, Aleksandar; Vasilić, Rastko

2018-03-01

Plasma electrolytic oxidation was used for synthesis of Eu3+ doped monoclinic HfO2 coatings on hafnium substrate. Results of photoluminescence (PL) measurements show the existence of two distinct regions: one that is related to the blue emission originating from oxygen vacancy defects in HfO2 and the other one characterized with a series of sharp orange-red emission peaks related to f-f transitions of Eu3+ from excited level 5D0 to lower levels 7FJ (J = 0, 1, 2, 3, and 4). PL peaks appearing in excitation spectra of obtained coatings are attributed either to charge transfer state of Eu3+ or to direct excitation of the Eu3+ ground state 7F0 into higher levels of the 4f-manifold. PL of formed coatings increases with PEO time due to an increase of oxygen vacancy defects and the content of Eu3+. Acquired experimental data suggest that hypersensitive electrical dipole transition is much more intense than the magnetic dipole transition, indicating that Eu3+ ions occupy a non-inversion symmetry sites.

High temperature calorimetric studies of heat of solution of NiO, CuO, La2O3, TiO2, HfO2 in sodium silicate liquids

NASA Astrophysics Data System (ADS)

Linard, Yannick; Wilding, Martin C.; Navrotsky, Alexandra

2008-01-01

The enthalpies of solution of La2O3, TiO2, HfO2, NiO and CuO were measured in sodium silicate melts at high temperature. When the heat of fusion was available, we derived the corresponding liquid-liquid enthalpies of mixing. These data, combined with previously published work, provide insight into the speciation reactions in sodium silicate melts. The heat of solution of La2O3 in these silicate solvents is strongly exothermic and varies little with La2O3 concentration. The variation of heat of solution with composition of the liquid reflects the ability of La(III) to perturb the transient silicate framework and compete with other cations for oxygen. The enthalpy of solution of TiO2 is temperature-dependent and indicates that the formation of Na-O-Si species is favored over Na-O-Ti at low temperature. The speciation reactions can be interpreted in terms of recent spectroscopic studies of titanium-bearing melts which identify a dual role of Ti4+ as both a network-former end network-modifier. The heats of solution of oxides of transition elements (Ni and Cu) are endothermic, concentration-dependent and reach a maximum with concentration. These indicate a charge balanced substitution which diminishes the network modifying role of Na+ by addition of Ni2+ or Cu2+. The transition metal is believed to be in tetrahedral coordination, charge balanced by the sodium cation in the melts.

Size distribution, chemical composition, and hygroscopicity of fine particles emitted from an oil-fired heating plant.

PubMed

Happonen, Matti; Mylläri, Fanni; Karjalainen, Panu; Frey, Anna; Saarikoski, Sanna; Carbone, Samara; Hillamo, Risto; Pirjola, Liisa; Häyrinen, Anna; Kytömäki, Jorma; Niemi, Jarkko V; Keskinen, Jorma; Rönkkö, Topi

2013-12-17

Heavy fuel oil (HFO) is a commonly used fuel in industrial heating and power generation and for large marine vessels. In this study, the fine particle emissions of a 47 MW oil-fired boiler were studied at 30 MW power and with three different fuels. The studied fuels were HFO, water emulsion of HFO, and water emulsion of HFO mixed with light fuel oil (LFO). With all the fuels, the boiler emitted considerable amounts of particles smaller than 200 nm in diameter. Further, these small particles were quite hygroscopic even as fresh and, in the case of HFO+LFO emulsion, the hygroscopic growth of the particles was dependent on particle size. The use of emulsions and the addition of LFO to the fuel had a reducing effect on the hygroscopic growth of particles. The use of emulsions lowered the sulfate content of the smallest particles but did not affect significantly the sulfate content of particles larger than 42 nm and, further, the addition of LFO considerably increased the black carbon content of particulate matter. The results indicate that even the fine particles emitted from HFO based combustion can have a significant effect on cloud formation, visibility, and air quality.

Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer

NASA Astrophysics Data System (ADS)

Greene, Andrew; Madisetti, Shailesh; Nagaiah, Padmaja; Yakimov, Michael; Tokranov, Vadim; Moore, Richard; Oktyabrsky, Serge

2012-12-01

The highly reactive GaSb surface was passivated with a thin InAs layer to limit interface trap state density (Dit) at the III-V/high-k oxide interface. This InAs surface was subjected to various cleaning processes to effectively reduce native oxides before atomic layer deposition (ALD). Ammonium sulfide pre-cleaning and trimethylaluminum/water ALD were used in conjunction to provide a clean interface and annealing in forming gas (FG) at 350 °C resulted in an optimized fabrication for n-GaSb/InAs/high-k gate stacks. Interface trap density, Dit ≈ 2-3 × 1012 cm-2eV-1 resided near the n-GaSb conductance band which was extracted and compared with three different methods. Conductance-voltage-frequency plots showed efficient Fermi level movement and a sub-threshold slope of 200 mV/dec. A composite high-k oxide process was also developed using ALD of Al2O3 and HfO2 resulting in a Dit ≈ 6-7 × 1012 cm-2eV-1. Subjecting these samples to a higher (450 °C) processing temperature results in increased oxidation and a thermally unstable interface. p-GaSb displayed very fast minority carrier generation/recombination likely due to a high density of bulk traps in GaSb.

First-Principles Prediction of Two-Dimensional Electron Gas Driven by Polarization Discontinuity in Nonpolar/Nonpolar AHfO3/SrTiO3 (A=Ca, Sr, and Ba) Heterostructures

NASA Astrophysics Data System (ADS)

Cheng, Jianli; Nazir, Safdar; Yang, Kesong

By using first-principles electronic structure calculations, we explored the possibility of producing two-dimensional electron gas (2DEG) in nonpolar/nonpolar AHfO3/SrTiO3 (A = Ca, Sr, and Ba) heterostructures (HS). Two types of interfaces, AO/TiO2 and HfO2/SrO, each with AO and HfO2 surface terminations, are modeled, respectively. The polarization domain and resulting interfacial electronic property are found to be more sensitive to the surface termination of the film rather than the interface model. As film thickness increases, an insulator-to-metal transition (IMT) is found in all the HS with HfO2 surface termination: for AO/TiO2 interfaces, predicted critical film thickness for an IMT is about 7, 6, and 3 unit cells for CaHfO3/SrTiO3, SrHfO3/SrTiO3, and BaHfO3/SrTiO3, respectively; for HfO2/SrO interfaces, the critical film thickness is about 7.5, 5.5, and 4.5 unit cells, respectively. In contrast, for the HS with AO surface termination, only CaHfO3/SrTiO3 exhibits an IMT with a much larger critical film thickness about 11 - 12 unit cells. This work is expected to stimulate further experimental investigation to the interfacial conductivity in the nonpolar/nonpolar AHfO3/SrTiO3 HS. National Science Foundation and Department of Defense National Security Science and Engineering Faculty Fellowship.

NMDA receptor antagonist-enhanced high frequency oscillations: are they generated broadly or regionally specific?

PubMed

Olszewski, Maciej; Dolowa, Wioleta; Matulewicz, Pawel; Kasicki, Stefan; Hunt, Mark J

2013-12-01

Systemic administration of NMDA receptor antagonists, used to model schizophrenia, increase the power of high-frequency oscillations (130-180Hz, HFO) in a variety of neuroanatomical and functionally distinct brain regions. However, it is unclear whether HFO are independently and locally generated or instead spread from a distant source. To address this issue, we used local infusion of tetrodotoxin (TTX) to distinct brain areas to determine how accurately HFO recorded after injection of NMDAR antagonists reflect the activity actually generated at the electrode tip. Changes in power were evaluated in local field potentials (LFPs) recorded from the nucleus accumbens (NAc), prefrontal cortex and caudate and in electrocorticograms (ECoGs) from visual and frontal areas. HFO recorded in frontal and visual cortices (ECoGs) or in the prefrontal cortex, caudate (LFPs) co-varied in power and frequency with observed changes in the NAc. TTX infusion to the NAc immediately and profoundly reduced the power of accumbal HFO which correlated with changes in HFO recorded in distant cortical sites. In contrast, TTX infusion to the prefrontal cortex did not change HFO power recorded locally, although gamma power was reduced. A very similar result was found after TTX infusion to the caudate. These findings raise the possibility that the NAc is an important neural generator. Our data also support existing studies challenging the idea that high frequencies recorded in LFPs are necessarily generated at the recording site. Copyright © 2013 Elsevier B.V. and ECNP. All rights reserved.

Band alignment of 2D WS2/HfO2 interfaces from x-ray photoelectron spectroscopy and first-principles calculations

NASA Astrophysics Data System (ADS)

Zhu, H. L.; Zhou, C. J.; Tang, B. S.; Yang, W. F.; Chai, J. W.; Tay, W. L.; Gong, H.; Pan, J. S.; Zou, W. D.; Wang, S. J.; Chi, D. Z.

2018-04-01

We report on the growth of two-dimensional (2D) WS2 on high-k HfO2/Si substrates by reactive sputtering deposition. Raman, x-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy characterizations indicate that the 2D WS2 layers exhibit high-quality crystallinity and exact stoichiometry. Through high-resolution XPS valence spectra, we find a type I alignment at the interface of monolayer WS2/HfO2 with a valence band offset (VBO) of 1.95 eV and a conduction band offset (CBO) of 1.57 eV. The VBO and CBO are also found to increase up to 2.24 eV and 2.09 eV, respectively, with increasing WS2 layers. This is consistent with the results obtained from our first-principles calculations. Our theoretical calculations reveal that the remarkable splitting and shift of the W 5 d z 2 orbital originating from interlayer orbital coupling in thicker WS2 films induce a reduction of its bandgap, leading to an increase in both the VBO and CBO. This observation can be attributed to the asymmetric splitting at different high symmetric k-points caused by the interlayer orbital coupling.

A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.

PubMed

Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

2018-06-15

Top-gated and bottom-gated transistors with multilayer MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on-off current ratio of 10 8 , high field-effect mobility of 10 2 cm 2 V -1 s -1 , and low subthreshold swing of 93 mV dec -1 . Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10 -3 -10 -2 V MV -1 cm -1 after 6 MV cm -1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 is a promising way to fabricate high-performance ML MoS 2 field-effect transistors for practical electron device applications.

Electro-plasmonic 2 × 2 channel-routing switch arranged on a thin-Si-doped metal/insulator/semiconductor/metal structure.

PubMed

Moazzam, Mostafa Keshavarz; Kaatuzian, Hassan

2016-01-20

Plasmonics as a new field of chip-scale technology is the interesting substrate of this study to propose and numerically investigate a metal/insulator/semiconductor/metal (MISM)-structure 2×2 plasmonic routing switch. As a planar subwavelength arrangement, the presented design has two npn-doped side-coupled dual waveguides whose duty is to route the propagating surface plasmon polaritons through the device. Relying on the MISM structure, which has a MOS-like thin-film arrangement of typically 45 nm doped silicon covered by a layer of 8 nm thick HfO(2) gate insulator, the routing configuration is electrically addressed based on the carrier-induced plasma dispersion effects as an external electro-plasmonic switching control. Finite-element-method-conducted electromagnetic simulations are employed to evaluate the switch optical response at telecom wavelength of λ=1550  nm, due to which the balanced operation measure of extinction ratios larger than 10 dB and insertion losses of around -1.8  dB are obtained for both channels of CROSS and STRAIGHT. Compared with other photonic and plasmonic switching counterparts, this configuration, besides its potential for CMOS compatibility, can be utilized as a high-speed compact building block to sustain higher-speed, more miniaturized, and less consuming electro-optic routing/switching protocols toward complicated optical integrated circuits and systems.

Preserved Filamentous Microbial Biosignatures in the Brick Flat Gossan, Iron Mountain, California

PubMed Central

Sumner, Dawn Y.; Alpers, Charles N.; Karunatillake, Suniti; Hofmann, Beda A.

2015-01-01

Abstract A variety of actively precipitating mineral environments preserve morphological evidence of microbial biosignatures. One such environment with preserved microbial biosignatures is the oxidized portion of a massive sulfide deposit, or gossan, such as that at Iron Mountain, California. This gossan may serve as a mineralogical analogue to some ancient martian environments due to the presence of oxidized iron and sulfate species, and minerals that only form in acidic aqueous conditions, in both environments. Evaluating the potential biogenicity of cryptic textures in such martian gossans requires an understanding of how microbial textures form biosignatures on Earth. The iron-oxide-dominated composition and morphology of terrestrial, nonbranching filamentous microbial biosignatures may be distinctive of the underlying formation and preservation processes. The Iron Mountain gossan consists primarily of ferric oxide (hematite), hydrous ferric oxide (HFO, predominantly goethite), and jarosite group minerals, categorized into in situ gossan, and remobilized iron deposits. We interpret HFO filaments, found in both gossan types, as HFO-mineralized microbial filaments based in part on (1) the presence of preserved central filament lumina in smooth HFO mineral filaments that are likely molds of microbial filaments, (2) mineral filament formation in actively precipitating iron-oxide environments, (3) high degrees of mineral filament bending consistent with a flexible microbial filament template, and (4) the presence of bare microbial filaments on gossan rocks. Individual HFO filaments are below the resolution of the Mars Curiosity and Mars 2020 rover cameras, but sinuous filaments forming macroscopic matlike textures are resolvable. If present on Mars, available cameras may resolve these features identified as similar to terrestrial HFO filaments and allow subsequent evaluation for their biogenicity by synthesizing geochemical, mineralogical, and morphological analyses. Sinuous biogenic filaments could be preserved on Mars in an iron-rich environment analogous to Iron Mountain, with the Pahrump Hills region and Hematite Ridge in Gale Crater as tentative possibilities. Key Words: Geobiology—Biosignatures—Filaments—Mars—Microbial fossils. Astrobiology 15, 637–668. PMID:26247371

Preserved Filamentous Microbial Biosignatures in the Brick Flat Gossan, Iron Mountain, California.

PubMed

Williams, Amy J; Sumner, Dawn Y; Alpers, Charles N; Karunatillake, Suniti; Hofmann, Beda A

2015-08-01

A variety of actively precipitating mineral environments preserve morphological evidence of microbial biosignatures. One such environment with preserved microbial biosignatures is the oxidized portion of a massive sulfide deposit, or gossan, such as that at Iron Mountain, California. This gossan may serve as a mineralogical analogue to some ancient martian environments due to the presence of oxidized iron and sulfate species, and minerals that only form in acidic aqueous conditions, in both environments. Evaluating the potential biogenicity of cryptic textures in such martian gossans requires an understanding of how microbial textures form biosignatures on Earth. The iron-oxide-dominated composition and morphology of terrestrial, nonbranching filamentous microbial biosignatures may be distinctive of the underlying formation and preservation processes. The Iron Mountain gossan consists primarily of ferric oxide (hematite), hydrous ferric oxide (HFO, predominantly goethite), and jarosite group minerals, categorized into in situ gossan, and remobilized iron deposits. We interpret HFO filaments, found in both gossan types, as HFO-mineralized microbial filaments based in part on (1) the presence of preserved central filament lumina in smooth HFO mineral filaments that are likely molds of microbial filaments, (2) mineral filament formation in actively precipitating iron-oxide environments, (3) high degrees of mineral filament bending consistent with a flexible microbial filament template, and (4) the presence of bare microbial filaments on gossan rocks. Individual HFO filaments are below the resolution of the Mars Curiosity and Mars 2020 rover cameras, but sinuous filaments forming macroscopic matlike textures are resolvable. If present on Mars, available cameras may resolve these features identified as similar to terrestrial HFO filaments and allow subsequent evaluation for their biogenicity by synthesizing geochemical, mineralogical, and morphological analyses. Sinuous biogenic filaments could be preserved on Mars in an iron-rich environment analogous to Iron Mountain, with the Pahrump Hills region and Hematite Ridge in Gale Crater as tentative possibilities.

Preserved filamentous microbial biosignatures in the Brick Flat gossan, Iron Mountain, California

USGS Publications Warehouse

Williams, Amy J.; Sumner, Dawn Y.; Alpers, Charles N.; Karunatillake, Suniti; Hofmann, Beda A

2015-01-01

A variety of actively precipitating mineral environments preserve morphological evidence of microbial biosignatures. One such environment with preserved microbial biosignatures is the oxidized portion of a massive sulfide deposit, or gossan, such as that at Iron Mountain, California. This gossan may serve as a mineralogical analogue to some ancient martian environments due to the presence of oxidized iron and sulfate species, and minerals that only form in acidic aqueous conditions, in both environments. Evaluating the potential biogenicity of cryptic textures in such martian gossans requires an understanding of how microbial textures form biosignatures on Earth. The iron-oxide-dominated composition and morphology of terrestrial, nonbranching filamentous microbial biosignatures may be distinctive of the underlying formation and preservation processes. The Iron Mountain gossan consists primarily of ferric oxide (hematite), hydrous ferric oxide (HFO, predominantly goethite), and jarosite group minerals, categorized into in situ gossan, and remobilized iron deposits. We interpret HFO filaments, found in both gossan types, as HFO-mineralized microbial filaments based in part on (1) the presence of preserved central filament lumina in smooth HFO mineral filaments that are likely molds of microbial filaments, (2) mineral filament formation in actively precipitating iron-oxide environments, (3) high degrees of mineral filament bending consistent with a flexible microbial filament template, and (4) the presence of bare microbial filaments on gossan rocks. Individual HFO filaments are below the resolution of the Mars Curiosity and Mars 2020 rover cameras, but sinuous filaments forming macroscopic matlike textures are resolvable. If present on Mars, available cameras may resolve these features identified as similar to terrestrial HFO filaments and allow subsequent evaluation for their biogenicity by synthesizing geochemical, mineralogical, and morphological analyses. Sinuous biogenic filaments could be preserved on Mars in an iron-rich environment analogous to Iron Mountain, with the Pahrump Hills region and Hematite Ridge in Gale Crater astentative possibilities.

A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2

NASA Astrophysics Data System (ADS)

Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

2018-06-01

Top-gated and bottom-gated transistors with multilayer MoS2 channel fully encapsulated by stacked Al2O3/HfO2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on–off current ratio of 108, high field-effect mobility of 102 cm2 V‑1 s‑1, and low subthreshold swing of 93 mV dec–1. Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10‑3–10‑2 V MV–1 cm–1 after 6 MV cm‑1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS2 channel fully encapsulated by stacked Al2O3/HfO2 is a promising way to fabricate high-performance ML MoS2 field-effect transistors for practical electron device applications.

Low-Frequency Noise in Layered ReS2 Field Effect Transistors on HfO2 and Its Application for pH Sensing.

PubMed

Liao, Wugang; Wei, Wei; Tong, Yu; Chim, Wai Kin; Zhu, Chunxiang

2018-02-28

Layered rhenium disulfide (ReS 2 ) field effect transistors (FETs), with thickness ranging from few to dozens of layers, are demonstrated on 20 nm thick HfO 2 /Si substrates. A small threshold voltage of -0.25 V, high on/off current ratio of up to ∼10 7 , small subthreshold swing of 116 mV/dec, and electron carrier mobility of 6.02 cm 2 /V·s are obtained for the two-layer ReS 2 FETs. Low-frequency noise characteristics in ReS 2 FETs are analyzed for the first time, and it is found that the carrier number fluctuation mechanism well describes the flicker (1/f) noise of ReS 2 FETs with different thicknesses. pH sensing using a two-layer ReS 2 FET with HfO 2 as a sensing oxide is then demonstrated with a voltage sensitivity of 54.8 mV/pH and a current sensitivity of 126. The noise characteristics of the ReS 2 FET-based pH sensors are also examined, and a corresponding detection limit of 0.0132 pH is obtained. Our studies suggest the high potential of ReS 2 for future low-power nanoelectronics and biosensor applications.

Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

NASA Astrophysics Data System (ADS)

Palade, C.; Lepadatu, A. M.; Slav, A.; Lazanu, S.; Teodorescu, V. S.; Stoica, T.; Ciurea, M. L.

2018-01-01

Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.

Research on c-HfO2 (0 0 1)/α -Al2O3 (1 -1 0 2) interface in CTM devices based on first principle theory

NASA Astrophysics Data System (ADS)

Lu, Wenjuan; Dai, Yuehua; Wang, Feifei; Yang, Fei; Ma, Chengzhi; Zhang, Xu; Jiang, Xianwei

2017-12-01

With the growing application of high-k dielectrics, the interface between HfO2 and Al2O3 play a crucial role in CTM devices. To clearly understand the interaction of the HfO-AlO interface at the atomic and electronic scale, the bonding feature, electronic properties and charge localized character of c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has been investigated by first principle calculations. The c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has adhesive energy about -1.754 J/m2, suggesting that this interface can exist stably. Through analysis of Bader charge and charge density difference, the intrinsic interfacial gap states are mainly originated from the OII and OIII types oxygen atoms at the interface, and only OIII type oxygen atoms can localized electrons effectively and are provided with good reliability during P/E cycles, which theoretically validate the experimental results that HfO2/Al2O3 multi-layered charge trapping layer can generate more effective traps in memory device. Furthermore, the influence of interfacial gap states during P/E cycles in the defective interface system have also been studied, and the results imply that defective system displays the degradation on the reliability during P/E cycles, while, the charge localized ability of interfacial states is stronger than intrinsic oxygen vacancy in the trapping layer. Besides, these charge localized characters are further explained by the analysis of the density of states correspondingly. In sum, our results compare well with similar experimental observations in other literatures, and the study of the interfacial gap states in this work would facilitate further development of interface passivation.

Measurement of Ferroelectric Films in MFM and MFIS Structures

NASA Astrophysics Data System (ADS)

Anderson, Jackson D.

For many years ferroelectric memory has been used in applications requiring low power, yet mainstream adoption has been stifled due to integration and scaling issues. With the renewed interest in these devices due to the recent discovery of ferroelectricity in HfO2, it is imperative that the properties of these films are well understood. To aid that end, a ferroelectric analysis package has been developed and released on GitHub and PyPI under a creative commons non-commercial share-alike license. This package contains functions for visualization and analysis of data from polarization, leakage current, and FORC measurements as well as basic modeling capability. Functionality is verified via the analysis of lead zirconate titanate (PZT) capacitors, where a multi-domain simulation based on an experimental Preisach density shows decent agreement despite measurement noise. The package is then used in the analysis of ferroelectric HfO2 films deposited in metal-ferroelectric-metal (MFM) and metal-ferroelectric-insulator-semiconductor (MFIS) stacks. 13.5 nm HfO2 films deposited on a semiconductor surface are shown to have a coercive voltage of 2.5 V, rather than the 1.9 V of the film in an MFM stack. This value further increases to 3-5 V when a lightly doped semiconductor depletion and inversion capacitance is added to the stack. The magnitude of this change is more than can be accounted for from the 10% voltage drop across the interfacial oxide layer, indicating that the modified surface properties are impacting the formation of the ferroelectric phase during anneal. In light of this, care should be taken to map out ferroelectric HfO2 properties using the particular physical stack that will be used, rather than using an MFM stack as a proxy.

Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Song, Yang; Katsman, Alexander; Butcher, Amy L.; Paine, David C.; Zaslavsky, Alexander

2017-10-01

Thin film transistors (TFTs) based on transparent oxide semiconductors, such as indium zinc oxide (IZO), are of interest due to their improved characteristics compared to traditional a-Si TFTs. Previously, we reported on top-gated IZO TFTs with an in-situ formed HfO2 gate insulator and IZO active channel, showing high performance: on/off ratio of ∼107, threshold voltage VT near zero, extracted low-field mobility μ0 = 95 cm2/V·s, and near-perfect subthreshold slope at 62 mV/decade. Since device stability is essential for technological applications, in this paper we report on the temporal and voltage stress stability of IZO TFTs. Our devices exhibit a small negative VT shift as they age, consistent with an increasing carrier density resulting from an increasing oxygen vacancy concentration in the channel. Under gate bias stress, freshly annealed TFTs show a negative VT shift during negative VG gate bias stress, while aged (>1 week) TFTs show a positive VT shift during negative VG stress. This indicates two competing mechanisms, which we identify as the field-enhanced generation of oxygen vacancies and the field-assisted migration of oxygen vacancies, respectively. A simplified kinetic model of the vacancy concentration evolution in the IZO channel under electrical stress is provided.

Interface plasmonic properties of silver coated by ultrathin metal oxides

NASA Astrophysics Data System (ADS)

Sytchkova, A.; Zola, D.; Grilli, M. L.; Piegari, A.; Fang, M.; He, H.; Shao, J.

2011-09-01

Many fields of high technology take advantage of conductor-dielectric interface properties. Deeper knowledge of physical processes that determine the optical response of the structures containing metal-dielectric interfaces is important for improving the performance of thin film devices containing such materials. Here we present a study on optical properties of several ultrathin metal oxides deposited over thin silver layers. Some widely used materials (Al2O3, SiO2, Y2O3, HfO2) were selected for deposition by r.f. sputtering, and the created metal-dielectric structures with two of them, alumina and silica, were investigated in this work using attenuated total reflectance (ATR) technique and by variable-angle spectroscopic ellipsometry (VASE). VASE was performed with a help of a commercial ellipsometer at various incident angles and in a wide spectral range. A home-made sample holder manufactured for WVASE ellipsometer and operational in Otto configuration has been implemented for angle-resolved and spectral ATR measurements. Simultaneous analysis of data obtained by these two independent techniques allows elaboration of a representative model for plasmonic-related phenomena at metal-dielectric interface. The optical constants of the interface layers formed between metal and ultrathin oxide layers are investigated. A series of oxides chosen for this study allows a comparative analysis aimed for selection of the most appropriate materials for different applications.

HfO2 and SiO2 as barriers in magnetic tunneling junctions

NASA Astrophysics Data System (ADS)

Shukla, Gokaran; Archer, Thomas; Sanvito, Stefano

2017-05-01

SiO2 and HfO2 are both high-k, wide-gap semiconductors, currently used in the microelectronic industry as gate barriers. Here we investigate whether the same materials can be employed to make magnetic tunnel junctions, which in principle can be amenable for integration in conventional Si technology. By using a combination of density functional theory and the nonequilibrium Green's functions method for quantum transport we have studied the transport properties of Co [0001 ] /SiO2[001 ] /Co [0001 ] and Fe [001 ] /HfO2[001 ] /Fe [001 ] junctions. In both cases we found a quite large magnetoresistance, which is explained through the analysis of the real band structure of the magnets and the complex one of the insulator. We find that there is no symmetry spin filtering for the Co-based junction since the high transmission Δ2' band crosses the Fermi level, EF, for both spin directions. However, the fact that Co is a strong ferromagnet makes the orbital contribution to the two Δ2' spin subbands different, yielding magnetoresistance. In contrast for the Fe-based junction symmetry filtering is active for an energy window spanning between the Fermi level and 1 eV below EF, with Δ1 symmetry contributing to the transmission.

Optical and infrared properties of glancing angle-deposited nanostructured tungsten films.

PubMed

Ungaro, Craig; Shah, Ankit; Kravchenko, Ivan; Hensley, Dale K; Gray, Stephen K; Gupta, Mool C

2015-02-15

Nanotextured tungsten thin films were obtained on a stainless steel (SS) substrate using the glancing-angle-deposition (GLAD) method. It was found that the optical absorption and thermal emittance of the SS substrate can be controlled by varying the parameters used during deposition. Finite-difference time-domain (FDTD) simulations were used to predict the optical absorption and infrared (IR) reflectance spectra of the fabricated samples, and good agreement was found between simulated and measured data. FDTD simulations were also used to predict the effect of changes in the height and periodicity of the nanotextures. These simulations show that good control over the absorption can be achieved by altering the height and periodicity of the nanostructure. These nanostructures were shown to be temperature stable up to 500°C with the addition of a protective HfO2 layer. Applications for this structure are explored, including a promising application for solar thermal energy systems.

Bioenhanced dissolution of dense non-aqueous phase of trichloroethylene as affected by iron reducing conditions: model systems and environmental samples.

PubMed

Paul, Laiby; Smolders, Erik

2015-01-01

The anaerobic biotransformation of trichloroethylene (TCE) can be affected by competing electron acceptors such as Fe (III). This study assessed the role of Fe (III) reduction on the bioenhanced dissolution of TCE dense non-aqueous phase liquid (DNAPL). Columns were set up as 1-D diffusion cells consisting of a lower DNAPL layer, a layer with an aquifer substratum and an upper water layer that is regularly refreshed. The substrata used were either inert sand or sand coated with 2-line ferrihydrite (HFO) or two environmental Fe (III) containing samples. The columns were inoculated with KB-1 and were repeatedly fed with formate. In none of the diffusion cells, vinyl chloride or ethene was detected while dissolved and extractable Fe (II) increased strongly during 60 d of incubation. The cis-DCE concentration peaked at 4.0 cm from the DNAPL (inert sand) while it was at 3.4 cm (sand+HFO), 1.7 cm and 2.5 cm (environmental samples). The TCE concentration gradients near the DNAPL indicate that the DNAPL dissolution rate was larger than that in an abiotic cell by factors 1.3 (inert sand), 1.0 (sand+HFO) and 2.2 (both environmental samples). This results show that high bioavailable Fe (III) in HFO reduces the TCE degradation by competitive Fe (III) reduction, yielding lower bioenhanced dissolution. However, Fe (III) reduction in environmental samples was not reducing TCE degradation and the dissolution factor was even larger than that of inert sand. It is speculated that physical factors, e.g. micro-niches in the environmental samples protect microorganisms from toxic concentrations of TCE. Copyright © 2014 Elsevier Ltd. All rights reserved.

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

PubMed

Li, Xuefei; Xiong, Xiong; Li, Tiaoyang; Li, Sichao; Zhang, Zhenfeng; Wu, Yanqing

2017-12-27

Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS 2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS 2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS 2 FETs from 300 to 4.3 K. Results show that Al 2 O 3 /HfO 2 could boost the mobility and drain current. Meanwhile, MoS 2 transistors with Al 2 O 3 /HfO 2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO 2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO 2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al 2 O 3 /HfO 2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.

Dissociation mechanisms of HFO-1336mzz(Z) on Cu(1 1 1), Cu(1 1 0) and Cu(1 0 0) surfaces: A density functional theory study

NASA Astrophysics Data System (ADS)

Huo, Erguang; Liu, Chao; Xu, Xiaoxiao; Li, Qibin; Dang, Chaobin

2018-06-01

The catalytic effect of Cu(1 1 1), Cu(1 1 0) and Cu(1 0 0) surfaces on the decomposition of HFO-1336mzz(Z) have been investigated by using Density Functional Theory (DFT) calculations. On the basis of adsorption energy analysis, the most stable adsorption energies of HFO-1336mzz(Z) and relevant products on Cu(1 1 1), Cu(1 1 0) and Cu(1 0 0) surfaces were studied, respectively, and the co-adsorption structures of relevant species were obtained. Finally, four initiation decomposition reactions of HFO-1336mzz(Z) on Cu(1 1 1), Cu(1 1 0) and Cu(1 0 0) surfaces were proposed and investigated, respectively. At the same time, the four similar homolytic reactions of free HFO-1336mzz(Z) molecular were calculated to compare with the dissociation reactions occurred on Cu(1 1 1), Cu(1 1 0) and Cu(1 0 0) surfaces and illuminate the catalytic effect of Cu(1 1 1), Cu(1 1 0) and Cu(1 0 0) surfaces on the HFO-1336mzz(Z) decomposition. The results indicated that Cu(1 1 1), Cu(1 1 0) and Cu(1 0 0) surfaces had a good catalytic effect on the decomposition of HFO-1336mzz(Z). The fracture reactions of Cdbnd C bonds on Cu(1 1 1), Cu(1 1 0) and Cu(1 0 0) surfaces were easier to occur than that of other reactions. Cu(1 0 0) surface had the highest catalytic activity and the lowest for Cu(1 1 1) surface.

Cardiac Magnetic Resonance Imaging Using an Open 1.0T MR Platform: A Comparative Study with a 1.5T Tunnel System.

PubMed

Fischbach, Katharina; Kosiek, Otrud; Friebe, Björn; Wybranski, Christian; Schnackenburg, Bernhard; Schmeisser, Alexander; Smid, Jan; Ricke, Jens; Pech, Maciej

2017-01-01

Cardiac magnetic resonance imaging (cMRI) has become the non-invasive reference standard for the evaluation of cardiac function and viability. The introduction of open, high-field, 1.0T (HFO) MR scanners offers advantages for examinations of obese, claustrophobic and paediatric patients.The aim of our study was to compare standard cMRI sequences from an HFO scanner and those from a cylindrical, 1.5T MR system. Fifteen volunteers underwent cMRI both in an open HFO and in a cylindrical MR system. The protocol consisted of cine and unenhanced tissue sequences. The signal-to-noise ratio (SNR) for each sequence and blood-myocardium contrast for the cine sequences were assessed. Image quality and artefacts were rated. The location and number of non-diagnostic segments was determined. Volunteers' tolerance to examinations in both scanners was investigated. SNR was significantly lower in the HFO scanner (all p<0.001). However, the contrast of the cine sequence was significantly higher in the HFO platform compared to the 1.5T MR scanner (0.685±0.41 vs. 0.611±0.54; p<0.001). Image quality was comparable for all sequences (all p>0.05). Overall, only few non-diagnostic myocardial segments were recorded: 6/960 (0.6%) by the HFO and 17/960 (1.8%) segments by the cylindrical system. The volunteers expressed a preference for the open MR system (p<0.01). Standard cardiac MRI sequences in an HFO platform offer a high image quality that is comparable to the quality of images acquired in a cylindrical 1.5T MR scanner. An open scanner design may potentially improve tolerance of cardiac MRI and therefore allow to examine an even broader patient spectrum.

Mechanism for atmosphere dependence of laser damage morphology in HfO2/SiO2 high reflective films

NASA Astrophysics Data System (ADS)

Pu, Yunti; Ma, Ping; Chen, Songlin; Zhu, Jiliang; Wang, Gang; Pan, Feng; Sun, Ping; Zhu, Xiaohong; Zhu, Jianguo; Xiao, Dingquan

2012-07-01

We show in this paper single-shot and multi-shot laser-induced damage thresholds (LIDTs) of HfO2/SiO2 high reflective films (the reflectance = 99.9%) are affected by the presence of a water layer absorbed on the surface of the porous films. When the water layer was removed with the process of pumping, the single-shot LIDT measured in vacuum dropped to ˜48% of that measured in air, while the multi-shot LIDT in vacuum dropped to ˜47% of its atmospheric value for the high reflective films. Typical damage micrographs of the films in air and in vacuum were obtained, showing distinct damage morphologies. Such atmosphere dependence of the laser damage morphology was found to originate from that formation of a water layer on the surface of porous films could cause an increase of horizontal thermal conductivity and a reduction of vertical thermal conductivity. Moreover, laser-induced periodic ripple damages in air were found in the SiO2 layer from the micrographs. A model of deformation kinematics was used to illustrate the occurrence of the periodic ripple damage, showing that it could be attributed to a contraction of the HfO2 layer under irradiation by the 5-ns laser pulses in air.

Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

PubMed Central

Lu, Qifeng; Mu, Yifei; Roberts, Joseph W.; Althobaiti, Mohammed; Dhanak, Vinod R.; Wu, Jingjin; Zhao, Chun; Zhao, Ce Zhou; Zhang, Qian; Yang, Li; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

2015-01-01

In this research, the hafnium titanate oxide thin films, TixHf1–xO2, with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C. The approximate deposition rates of 0.2 Å and 0.17 Å per cycle were obtained for titanium oxide and hafnium oxide, respectively. X-ray Photoelectron Spectroscopy (XPS) indicates the formation of GeOx and germanate at the interface. X-ray diffraction (XRD) indicates that all the thin films remain amorphous for this deposition condition. The surface roughness was analyzed using an atomic force microscope (AFM) for each sample. The electrical characterization shows very low hysteresis between ramp up and ramp down of the Capacitance-Voltage (CV) and the curves are indicative of low trap densities. A relatively large leakage current is observed and the lowest leakage current among the four samples is about 1 mA/cm2 at a bias of 0.5 V for a Ti0.9Hf0.1O2 sample. The large leakage current is partially attributed to the deterioration of the interface between Ge and TixHf1–xO2 caused by the oxidation source from HfO2. Consideration of the energy band diagrams for the different materials systems also provides a possible explanation for the observed leakage current behavior. PMID:28793705

Upconversion luminescence in Er3+ doped and Er3+/Yb3+ codoped zirconia and hafnia nanocrystals excited at 980 nm

NASA Astrophysics Data System (ADS)

Gómez, Luis A.; Menezes, Leonardo de S.; de Araújo, Cid B.; Gonçalves, Rogeria R.; Ribeiro, Sidney J. L.; Messaddeq, Younes

2010-06-01

Frequency upconversion (UC) luminescence in nanocrystalline zirconia (ZrO2) and hafnia (HfO2) doped with Er3+ and Yb3+ was studied under continuous-wave excitation at 980 nm. Samples of ZrO2:Er3+, ZrO2:Er3+/Yb3+, and HfO2:Er3+/Yb3+ were prepared by the sol-gel technique and characterized using x-ray diffraction and electron microscopy. A study of the infrared-to-green and infrared-to-red UC processes was performed including the analysis of the spectral and the temporal behavior. The mechanisms contributing to the UC luminescence were identified as excited state absorption and energy transfer among rare-earth ions.

Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2

NASA Astrophysics Data System (ADS)

Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

2017-10-01

We have investigated the energy efficiency and scalability of ferroelectric HfO2 (FE:HfO2)-based negative-capacitance field-effect-transistor (NCFET) with gate-all-around (GAA) nanowire (NW) channel structure. Analytic simulation is conducted to characterize NW-NCFET by varying NW diameter and/or thickness of gate insulator as device structural parameters. Due to the negative-capacitance effect and GAA NW channel structure, NW-NCFET is found to have 5× higher Ion/Ioff ratio than classical NW-MOSFET and 2× higher than double-gate (DG) NCFET, which results in wider design window for high Ion/Ioff ratio. To analyze these obtained results from the viewpoint of the device scalability, we have considered constraints regarding very limited device structural spaces to fit by the gate insulator and NW channel for aggresively scaled gate length (Lg) and/or very tight NW pitch. NW-NCFET still has design point with very thinned gate insulator and/or narrowed NW. Therefore, FE:HfO2-based NW-NCFET is applicable to the aggressively scaled technology node of sub-10 nm Lg and to the very tight NW integration of sub-30 nm NW pitch for beyond 7 nm technology. From 2011 to 2014, he engaged in developing high-speed optical transceiver module as an alternative military service in Republic of Korea. His research interest includes the development of steep slope MOSFETs for high energy-efficient operation and ferroelectric HfO2-based semiconductor devices, and fabrication of nanostructured devices. He joined the IBM T.J. Watson Research Center, Yorktown Heights, NY, in 2010, where he worked on advanced CMOS technologies such as FinFET, nanowire FET, SiGe channel and III-V channel. He was also engaged in launching 14 nm SOI FinFET and RMG technology development. Since 2014, he has been an Associate Professor in Institute of Industrial Science, University of Tokyo, Tokyo, Japan, where he has been working on ultralow power transistor and memory technology. Dr. Kobayashi is a member of IEEE and the Japan Society of Applied Physics. Dr. Hiramoto is a fellow of Japan Society of Applied Physics and a member of IEEE and IEICE. He served as the General Chair of Silicon Nanoelectronics Workshop in 2003 and the Program Chair in 1997, 1999, and 2001. He was on Committee of IEDM from 2003 to 2009. He was the Program Chair of Symposium on VLSI Technology in 2013 and was the General Chair in 2015. He is the Program Chair of International Conference on Solid-State Devices and Materials (SSDM) in 2016.

Electronic structure of strongly reduced (1 ‾ 1 1) surface of monoclinic HfO2

NASA Astrophysics Data System (ADS)

Cheng, YingXing; Zhu, Linggang; Ying, Yile; Zhou, Jian; Sun, Zhimei

2018-07-01

Material surface is playing an increasingly important role in electronic devices as their size down to nanoscale. Here, by first-principles calculations we studied the surface oxygen-vacancies (Vos) induced electronic-structure variation of HfO2 , in order to explore its potential applications in surface-controlled electronic devices. Firstly, it is found that single Vo tends to segregate onto the surface and attracts each other as they form pairs, making the formation of vacancies-contained functional surface possible. Then extensive Vo-chains whose formation/rupture can represent the high/low conductivity state are constructed. The electronic states induced by the Vos remain localized in the band-gap region for most of the Vo-chains studied here. A transition to a metallic conductance is found in metastable Vo-chain with formation energy increased by 0.25 eV per Vo. Moreover, we highlight the significance of the Hubbard U correction for density functional theory when studying the electronic-structure based conductance in the oxides. By comprehensive calculations, we find a conductivity-stability dilemma of the Vo-chains, providing guideline for understanding and designing the electronic devices based on HfO2 surface.

A vacancy-modulated self-selective resistive switching memory with pronounced nonlinear behavior

NASA Astrophysics Data System (ADS)

Ma, Haili; Feng, Jie; Gao, Tian; Zhu, Xi

2017-12-01

In this study, we report a self-selective (nonlinear) resistive switching memory cell, with high on-state half-bias nonlinearity of 650, sub-μA operating current, and high On/Off ratios above 100×. Regarding the cell structure, a thermal oxidized HfO x layer in combination with a sputtered Ta2O5 layer was configured as an active stack, with Pt and Hf as top and bottom electrodes, respectively. The Ta2O5 acts as a selective layer as well as a series resistor, which could make the resistive switching happened in HfO x layer. Through the analysis of the physicochemical properties and electrical conduction mechanisms at each state, a vacancy-modulated resistance switching model was proposed to explain the switching behavior. The conductivity of HfO x layer was changed by polarity-dependent drift of the oxygen vacancy ( V o), resulting in an electron hopping distance change during switching. With the help of Ta2O5 selective layer, high nonlinearity observed in low resistance state. The proposed material stack shows a promising prospect to act as a self-selective cell for 3D vertical RRAM application.

Physical and chemical characterisation of PM emissions from two ships operating in European Emission Control Areas

NASA Astrophysics Data System (ADS)

Moldanová, J.; Fridell, E.; Winnes, H.; Holmin-Fridell, S.; Boman, J.; Jedynska, A.; Tishkova, V.; Demirdjian, B.; Joulie, S.; Bladt, H.; Ivleva, N. P.; Niessner, R.

2013-04-01

Emissions of particulate matter (PM) from shipping contribute significantly to the anthropogenic burden of PM. The environmental effects of PM from shipping include negative impact on human health through increased concentrations of particles in many coastal areas and harbour cities and the climate impact. The PM emitted by ship engines consists of organic carbon (OC), elemental or black carbon (EC/BC), sulphate, inorganic compounds containing V, Ni, Ca, Zn and other metals and associated water. The chemical composition and physical properties of PM vary with type of fuel burned, type of engine and engine operation mode. While primary PM emissions of species like V, Ni and Ca are supposed to be determined by composition of fuel and lubricant oil, emissions of particulate OC, EC and sulphate are affected both by fuel quality and by operation mode of the engine. In this paper a number of parameters describing emission factors (EFs) of gases and of particulate matter from ship engines were investigated during 2 on-board measurement campaigns for 3 different engines and 3 different types of fuels. The measured EFs for PM mass were in the range 0.3 to 2.7 g/kg-fuel with lowest values for emissions from combustion of marine gas oil (MGO) and the highest for heavy fuel oil (HFO). Emission factors for particle numbers EF(PN) in the range 5 × 1015-1 × 1017 #/kg-fuel were found, the number concentration was dominated by particles in the ultrafine mode and ca. 2/3 of particles were non-volatile. The PM mass was dominated by particles in accumulation mode. Main metal elements in case of HFO exhaust PM were V, Ni, Fe, Ca and Zn, in case of MGO Ca, Zn and P. V and Ni were typical tracers of HFO while Ca, Zn and P are tracers of the lubricant oil. EC makes up 10-38% of the PM mass, there were not found large differences between HFO and MGO fuels. EC and ash elements make up 23-40% of the PM mass. Organic matter makes up 25-60% of the PM. The measured EF(OC) were 0.59 ± 0.15 g/kg-fuel for HFO and 0.22 ± 0.01 g/kg-fuel for MGO. The measured EF(SO42-) were low, ca. 100-200 mg/kg-fuel for HFO with 1% fuel sulphur content (FSC), 70-85 mg/kg-fuel for HFO with 0.5% FSC and 3-6 mg/kg-fuel for MGO. This corresponds to 0.2-0.7% and 0.01-0.02% of fuel S converted to PM sulphate for HFO and MGO, respectively. The (scanning) transmission electron microscopy (TEM and STEM) images of the collected PM have shown three different types of particles: (1) soot composed mainly of C, O, sometimes N, and with traces of Si, S, V, Ca and Ni; (2) char and char-mineral particles composed of C, O, Ca and S (sometimes Si and Al) with traces of V and Ni and sometimes P and (3) amorphous, probably organic particles containing sulphur and some vanadium. The maps of elements obtained from STEM showed heterogeneous composition of primary soot particles with respect to the trace metals and sulphur. Composition of the char-mineral particles indicates that species like CaSO4, CaO and/or CaCO3, SiO2 and/or Al2SiO5, V2O5 and Fe3O4 may be present; the last two were also confirmed by analyses of FTIR spectra of the PM samples. The TPO of PM from the ship exhaust samples showed higher soot oxidation reactivity compared to automotive diesel soot, PM from the HFO exhaust is more reactive than PM from the MGO exhaust. This higher oxidation reactivity could be explained by high content of catalytically active contaminants; in particular in the HFO exhaust PM for which the energy-dispersive X-ray spectroscopy (EDXRF) analyses showed high content of V, Ni and S. Oxidative potential measured as a rate of consumption of consumption of Dithiothreitol (DTT) was for the first time measured on PM from ship exhaust. The obtained values were between 0.01 and 0.04 nmol-DTT/min/μg-PM, quite similar to oxidative potentials of PM collected in urban and traffic sites. The data obtained during the experiments add information on emission factors for both gaseous and PM-bound compounds from ship engines using different fuels and under different engine load conditions. Observed variability of the EFs illustrates uncertainties of these emission factors as a result of measurement uncertainties, influences from trace components of fuels and lubricants and from differences between individual engines.

Cenosphere formation from heavy fuel oil: a numerical analysis accounting for the balance between porous shells and internal pressure

NASA Astrophysics Data System (ADS)

Reddy, Vanteru M.; Rahman, Mustafa M.; Gandi, Appala N.; Elbaz, Ayman M.; Schrecengost, Robert A.; Roberts, William L.

2016-01-01

Heavy fuel oil (HFO) as a fuel in industrial and power generation plants ensures the availability of energy at economy. Coke and cenosphere emissions from HFO combustion need to be controlled by particulate control equipment such as electrostatic precipitators, and collection effectiveness is impacted by the properties of these particulates. The cenosphere formation is a function of HFO composition, which varies depending on the source of the HFO. Numerical modelling of the cenosphere formation mechanism presented in this paper is an economical method of characterising cenosphere formation potential for HFO in comparison to experimental analysis of individual HFO samples, leading to better control and collection. In the present work, a novel numerical model is developed for understanding the global cenosphere formation mechanism. The critical diameter of the cenosphere is modelled based on the balance between two pressures developed in an HFO droplet. First is the pressure (Prpf) developed at the interface of the liquid surface and the inner surface of the accumulated coke due to the flow restriction of volatile components from the interior of the droplet. Second is the pressure due to the outer shell strength (PrC) gained from van der Walls energy of the coke layers and surface energy. In this present study it is considered that when PrC ≥ Prpf the outer shell starts to harden. The internal motion in the shell layer ceases and the outer diameter (DSOut) of the shell is then fixed. The entire process of cenosphere formation in this study is analysed in three phases: regression, shell formation and hardening, and post shell hardening. Variations in pressures during shell formation are analysed. Shell (cenosphere) dimensions are evaluated at the completion of droplet evaporation. The rate of fuel evaporation, rate of coke formation and coke accumulation are analysed. The model predicts shell outer diameters of 650, 860 and 1040 µm, and inner diameters are 360, 410 and 430 µm respectively, for 700, 900 and 1100 µm HFO droplets. The present numerical model is validated with experimental results available from the literature. Total variation between computational and experimental results is in the range of 3-7%.

MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

NASA Astrophysics Data System (ADS)

Abermann, S.; Pozzovivo, G.; Kuzmik, J.; Strasser, G.; Pogany, D.; Carlin, J.-F.; Grandjean, N.; Bertagnolli, E.

2007-12-01

We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from β-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of about 12 nm-14 nm are deposited for the MOS-HEMTs incorporating Ni/Au gates, whereas as a reference, Ni-contact-based 'conventional' Schottky-barrier (SB)-HEMTs are processed. The processed dielectrics decrease the gate current leakage of the HEMTs by about four orders of magnitude if compared with the SB-gated HEMTs and show superior device characteristics in terms of IDS and breakdown.

Modeling and Implementation of HfO2-based Ferroelectric Tunnel Junctions

NASA Astrophysics Data System (ADS)

Pringle, Spencer Allen

HfO2-based ferroelectric tunnel junctions (FTJs) represent a unique opportunity as both a next-generation digital non-volatile memory and as synapse devices in braininspired logic systems, owing to their higher reliability compared to filamentary resistive random-access memory (ReRAM) and higher speed and lower power consumption compared to competing devices, including phase-change memory (PCM) and state-of-the-art FTJ. Ferroelectrics are often easier to deposit and have simpler material structure than films for magnetic tunnel junctions (MTJs). Ferroelectric HfO2 also enables complementary metal-oxide-semiconductor (CMOS) compatibility, since lead zirconate titanate (PZT) and BaTiO3-based FTJs often are not. No other groups have yet demonstrated a HfO2-based FTJ (to best of the author's knowledge) or applied it to a suitable system. For such devices to be useful, system designers require models based on both theoretical physical analysis and experimental results of fabricated devices in order to confidently design control systems. Both the CMOS circuitry and FTJs must then be designed in layout and fabricated on the same die. This work includes modeling of proposed device structures using a custom python script, which calculates theoretical potential barrier heights as a function of material properties and corresponding current densities (ranging from 8x103 to 3x10-2 A/cm 2 with RHRS/RLRS ranging from 5x105 to 6, depending on ferroelectric thickness). These equations were then combined with polynomial fits of experimental timing data and implemented in a Verilog-A behavioral analog model in Cadence Virtuoso. The author proposes tristate CMOS control systems, and circuits, for implementation of FTJ devices as digital memory and presents simulated performance. Finally, a process flow for fabrication of FTJ devices with CMOS is presented. This work has therefore enabled the fabrication of FTJ devices at RIT and the continued investigation of them as applied to any appropriate systems.

Assessing the impact of atomic oxygen in the damage threshold and stress of Hafnia films grown by ion beam sputter deposition

NASA Astrophysics Data System (ADS)

Patel, D.; Wang, Y.; Larotonda, M.; Lovewell, J.; Jensen, J.; Hsiao, K. J.; Krous, E.; Rocca, J. J.; Menoni, C. S.; Tomasel, F.; Kholi, S.; McCurdy, P.

2007-01-01

Hafnium oxide (HfO II) is undoubtedly one of the most desirable high-index optical coatings for high power laser applications. One of the key goals in the fabrication of oxide films with high Laser Induced Damage Threshold (LIDT) is to minimize the number of film imperfections, in particular stoichiometric defects. For HfO II films deposited by ion beam (reactive) sputtering (IBS) of a hafnium metal target, stoichiometry is controlled by the injection of molecular oxygen, either close to the substrate or mixed with the sputtering gas or some other combination. Good stoichiometry is important to reduce the density of unoxidized particles buried in the coatings, which affect the LIDT. This work evaluates the potential advantages of using pre-activation of oxygen in the IBS of HfO II, with special emphasis on its impact on LIDT and film stress. For the experiments, oxygen was activated by an independent plasma source and then introduced into a commercial IBS chamber. The optical properties of the films were characterized using spectrophotometry and ellipsometry. Their structural quality and composition were determined from x-ray diffraction and x-ray photoelectron emission spectroscopy. The stress was determined from interferometer measurements. For optimized conditions, 2.5 J/cm2 LIDT was measured on HfO II films at λ=800 nm with 1 ps and 25 mJ pulses from a chirped amplification Ti:Sapphire laser. In the range of oxygen variations under consideration the effects on LIDT are shown to be minimal.

Adsorption of antimony onto iron oxyhydroxides: adsorption behavior and surface structure.

PubMed

Guo, Xuejun; Wu, Zhijun; He, Mengchang; Meng, Xiaoguang; Jin, Xin; Qiu, Nan; Zhang, Jing

2014-07-15

Antimony is detected in soil and water with elevated concentration due to a variety of industrial applications and mining activities. Though antimony is classified as a pollutant of priority interest by the United States Environmental Protection Agency (USEPA) and Europe Union (EU), very little is known about its environmental behavior and adsorption mechanism. In this study, the adsorption behaviors and surface structure of antimony (III/V) on iron oxides were investigated using batch adsorption techniques, surface complexation modeling (SCM), X-ray photon spectroscopy (XPS) and extended X-ray absorption fine structure spectroscopy (EXAFS). The adsorption isotherms and edges indicated that the affinity of Sb(V) and Sb(III) toward the iron oxides depended on the Sb species, solution pH, and the characteristics of iron oxides. Sb(V) adsorption was favored at acidic pH and decreased dramatically with increasing pH, while Sb(III) adsorption was constant over a broad pH range. When pH is higher than 7, Sb(III) adsorption by goethite and hydrous ferric oxide (HFO) was greater than Sb(V). EXAFS analysis indicated that the majority of Sb(III), either adsorbed onto HFO or co-precipitated by FeCl3, was oxidized into Sb(V) probably due to the involvement of O2 in the long duration of sample preservation. Only one Sb-Fe subshell was filtered in the EXAFS spectra of antimony adsorption onto HFO, with the coordination number of 1.0-1.9 attributed to bidentate mononuclear edge-sharing ((2)E) between Sb and HFO. Copyright © 2014 Elsevier B.V. All rights reserved.

Piston-pump-type high frequency oscillatory ventilation for neonates with congenital diaphragmatic hernia: a new protocol.

PubMed

Tamura, M; Tsuchida, Y; Kawano, T; Honna, T; Ishibashi, R; Iwanaka, T; Morita, Y; Hashimoto, H; Tada, H; Miyasaka, K

1988-05-01

High frequency ventilation and extracorporeal membrane oxygenation (ECMO) are devices that are expected to save the lives of newborn infants whose pulmonary conditions have deteriorated. A piston-pump-type high-frequency oscillator (HFO), developed by Bryan and Miyasaka called "Hummingbird," is considered to be superior to high frequency "jet" ventilators or those of the flow-interrupter type, and was used successfully in two neonates with congenital diaphragmatic hernia (CDH) in a high-risk group. The first baby was on a conventional ventilator with pharmacologic support for the first 54 hours and then operated on. Postoperative deterioration necessitated the use of HFO for the next eight days. The infant then recovered uneventfully. For the second baby, HFO was necessary both preoperatively and postoperatively. This baby had a major diaphragmatic defect and her case was complicated with pneumothorax. There was a long stormy course on HFO (total, 70 days), but the patient was successfully extubated on the 75th day postoperatively and is now doing well. We believe active long preoperative stabilization with pharmacologic support and preoperative and postoperative hyperventilation with a piston-pump-type HFO may be a new innovative strategy for the management of severe CDH patients.

In situ surface and interface study of crystalline (3×1)-O on InAs

NASA Astrophysics Data System (ADS)

Qin, Xiaoye; Wang, Wei-E.; Rodder, Mark S.; Wallace, Robert M.

2016-07-01

The oxidation behavior of de-capped InAs (100) exposed to O2 gas at different temperatures is investigated in situ with high resolution of monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction. The oxide chemical states and structure change dramatically with the substrate temperature. A (3 × 1) crystalline oxide layer on InAs is generated in a temperature range of 290-330 °C with a coexistence of In2O and As2O3. The stability of the crystalline oxide upon the atomic layer deposition (ALD) of HfO2 is studied as well. It is found that the generated (3 × 1) crystalline oxide is stable upon ALD HfO2 growth at 100 °C.

Light-Immune pH Sensor with SiC-Based Electrolyte-Insulator-Semiconductor Structure

NASA Astrophysics Data System (ADS)

Lin, Yi-Ting; Huang, Chien-Shiang; Chow, Lee; Lan, Jyun-Ming; Yang, Chia-Ming; Chang, Liann-Be; Lai, Chao-Sung

2013-12-01

An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95 mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.

A gel probe equilibrium sampler for measuring arsenic porewater profiles and sorption gradients in sediments: I. Laboratory development

USGS Publications Warehouse

Campbell, K.M.; Root, R.; O'Day, P. A.; Hering, J.G.

2008-01-01

A gel probe equilibrium sampler has been developed to study arsenic (As) geochemistry and sorption behavior in sediment porewater. The gels consist of a hydrated polyacrylamide polymer, which has a 92% water content. Two types of gels were used in this study. Undoped (clear) gels were used to measure concentrations of As and other elements in sediment porewater. The polyacrylamide gel was also doped with hydrous ferric oxide (HFO), an amorphous iron (Fe) oxyhydroxide. When deployed in the field, HFO-doped gels introduce a fresh sorbent into the subsurface thus allowing assessment of in situ sorption. In this study, clear and HFO-doped gels were tested under laboratory conditions to constrain the gel behavior prior to field deployment. Both types of gels were allowed to equilibrate with solutions of varying composition and re-equilibrated in acid for analysis. Clear gels accurately measured solution concentrations (??1%), and As was completely recovered from HFO-doped gels (??4%). Arsenic speciation was determined in clear gels through chromatographic separation of the re-equilibrated solution. For comparison to speciation in solution, mixtures of As(III) and As(V) adsorbed on HFO embedded in gel were measured in situ using X-ray absorption spectroscopy (XAS). Sorption densities for As(III) and As(V) on HFO embedded in gel were obtained from sorption isotherms at pH 7.1. When As and phosphate were simultaneously equilibrated (in up to 50-fold excess of As) with HFO-doped gels, phosphate inhibited As sorption by up to 85% and had a stronger inhibitory effect on As(V) than As(III). Natural organic matter (>200 ppm) decreased As adsorption by up to 50%, and had similar effects on As(V) and As(III). The laboratory results provide a basis for interpreting results obtained by deploying the gel probe in the field and elucidating the mechanisms controlling As partitioning between solid and dissolved phases in the environment. ?? 2008 American Chemical Society.

Petrogenesis of the middle Jurassic appinite and coeval granitoids in the Eastern Hebei area of North China Craton

NASA Astrophysics Data System (ADS)

Fan, Wenbo; Jiang, Neng; Xu, Xiyang; Hu, Jun; Zong, Keqing

2017-05-01

An integrated study of zircon U-Pb ages and Hf-O isotopic compositions, whole rock elemental and Sr-Nd isotope geochemistry was conducted on three lithologically diverse middle Jurassic plutons from the Eastern Hebei area of the North China Craton (NCC), in order to reveal both their petrogenesis and possible tectonic affinity. The three plutons have consistent magmatic zircon U-Pb ages from 167 ± 1 Ma to 173 ± 1 Ma. The Nianziyu pluton has typical characteristics of appinite with low SiO2 (43.7-52.6%), high Ca, Mg, Fe and H2O contents. It possesses subduction-related trace element patterns, enriched Nd-Hf isotopic signatures as well as elevated zircon δ18O values (6.2-7.2‰), arguing for an enriched mantle source metasomatized by fluids related to subduction. The Shuihutong monzogranites have high silica (SiO2 = 75.4-75.9%) and alkali contents, low Ca contents and striking negative Ba, Sr and Eu anomalies. Samples from the pluton have more evolved Nd-Hf isotopic values and are considered to be most likely derived from anatexis of ancient lower continental crust. Hybridization between mantle- and ancient lower crust-derived magmas is proposed for the mafic microgranular enclave-bearing Baijiadian granitoids, which are characterized by variable εNd (t) and εHf(t) values. Integrated with the regional geologic history, we suggest that the formation of the three middle Jurassic plutons were related to the subduction of the Paleo-Pacific ocean plate beneath the NCC. Their petrogenetic differences reflect complex magmatic processes in subduction settings involving melting of multiple sources, possible partly facilitated by fluid metasomatism and water-rich magma injection, accompanied with various degrees of magma mixing. The appearance of middle Jurassic appinitic rocks leads us to propose that the NCC destruction and lithosphere thinning were facilitated and controlled by the weakening of the lithospheric mantle after hydration because of the subduction of the paleo-Pacific ocean plate. The lower crust of the craton was also reactivated at the same time due to the subduction.

HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides

PubMed Central

Mleczko, Michal J.; Zhang, Chaofan; Lee, Hye Ryoung; Kuo, Hsueh-Hui; Magyari-Köpe, Blanka; Moore, Robert G.; Shen, Zhi-Xun; Fisher, Ian R.; Nishi, Yoshio; Pop, Eric

2017-01-01

The success of silicon as a dominant semiconductor technology has been enabled by its moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current, and the existence of SiO2 as a high-quality “native” insulator. In contrast, other mainstream semiconductors lack stable oxides and must rely on deposited insulators, presenting numerous compatibility challenges. We demonstrate that layered two-dimensional (2D) semiconductors HfSe2 and ZrSe2 have band gaps of 0.9 to 1.2 eV (bulk to monolayer) and technologically desirable “high-κ” native dielectrics HfO2 and ZrO2, respectively. We use spectroscopic and computational studies to elucidate their electronic band structure and then fabricate air-stable transistors down to three-layer thickness with careful processing and dielectric encapsulation. Electronic measurements reveal promising performance (on/off ratio > 106; on current, ~30 μA/μm), with native oxides reducing the effects of interfacial traps. These are the first 2D materials to demonstrate technologically relevant properties of silicon, in addition to unique compatibility with high-κ dielectrics, and scaling benefits from their atomically thin nature. PMID:28819644

Synthesis of dense yttrium-stabilised hafnia pellets for nuclear applications by spark plasma sintering

NASA Astrophysics Data System (ADS)

Tyrpekl, Vaclav; Holzhäuser, Michael; Hein, Herwin; Vigier, Jean-Francois; Somers, Joseph; Svora, Petr

2014-11-01

Dense yttrium-stabilised hafnia pellets (91.35 wt.% HfO2 and 8.65 wt.% Y2O3) were prepared by spark plasma sintering consolidation of micro-beads synthesised by the "external gelation" sol-gel technique. This technique allows a preparation of HfO2-Y2O3 beads with homogenous yttria-hafnia solid solution. A sintering time of 5 min at 1600 °C was sufficient to produce high density pellets (over 90% of the theoretical density) with significant reproducibility. The pellets have been machined in a lathe to the correct dimensions for use as neutron absorbers in an experimental test irradiation in the High Flux Reactor (HFR) in Petten, Holland, in order to investigate the safety of americium based nuclear fuels.

Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide

NASA Astrophysics Data System (ADS)

Driad, R.; Sah, R. E.; Schmidt, R.; Kirste, L.

2012-01-01

We present structural, stress, and electrical properties of plasma assisted e-beam evaporated hafnium dioxide (HfO2) layers on n-type InP substrates. These layers have subsequently been used for surface passivation of InGaAs/InP heterostructure bipolar transistors either alone or in combination with plasma enhanced chemical vapor deposited SiO2 layers. The use of stacked HfO2/SiO2 results in better interface quality with InGaAs/InP heterostructures, as illustrated by smaller leakage current and improved breakdown voltage. These improvements can be attributed to the reduced defect density and charge trapping at the dielectric-semiconductor interface. The deposition at room temperature makes these films suitable for sensitive devices.

CMUTs with high-K atomic layer deposition dielectric material insulation layer.

PubMed

Xu, Toby; Tekes, Coskun; Degertekin, F

2014-12-01

Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Six)Ny)) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2) such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD Six)Ny) and 100-nm HfO2) insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure.

Nanopore fabricated in pyramidal HfO2 film by dielectric breakdown method

NASA Astrophysics Data System (ADS)

Wang, Yifan; Chen, Qi; Deng, Tao; Liu, Zewen

2017-10-01

The dielectric breakdown method provides an innovative solution to fabricate solid-state nanopores on insulating films. A nanopore generation event via this method is considered to be caused by random charged traps (i.e., structural defects) and high electric fields in the membrane. Thus, the position and number of nanopores on planar films prepared by the dielectric breakdown method is hard to control. In this paper, we propose to fabricate nanopores on pyramidal HfO2 films (10-nm and 15-nm-thick) to improve the ability to control the location and number during the fabrication process. Since the electric field intensity gets enhanced at the corners of the pyramid-shaped film, the probability of nanopore occurrence at vertex and edge areas increases. This priority of appearance provides us chance to control the location and number of nanopores by monitoring a sudden irreversible discrete increase in current. The experimental results showed that the probability of nanopore occurrence decreases in an order from the vertex area, the edge area to the side face area. The sizes of nanopores ranging from 30 nm to 10 nm were obtained. Nanopores fabricated on the pyramid-shaped HfO2 film also showed an obvious ion current rectification characteristic, which might improve the nanopore performance as a biomolecule sequencing platform.

Adipose tissue transcriptomics and epigenomics in low birthweight men and controls: role of high-fat overfeeding.

PubMed

Gillberg, Linn; Perfilyev, Alexander; Brøns, Charlotte; Thomasen, Martin; Grunnet, Louise G; Volkov, Petr; Rosqvist, Fredrik; Iggman, David; Dahlman, Ingrid; Risérus, Ulf; Rönn, Tina; Nilsson, Emma; Vaag, Allan; Ling, Charlotte

2016-04-01

Individuals who had a low birthweight (LBW) are at an increased risk of insulin resistance and type 2 diabetes when exposed to high-fat overfeeding (HFO). We studied genome-wide mRNA expression and DNA methylation in subcutaneous adipose tissue (SAT) after 5 days of HFO and after a control diet in 40 young men, of whom 16 had LBW. mRNA expression was analysed using Affymetrix Human Gene 1.0 ST arrays and DNA methylation using Illumina 450K BeadChip arrays. We found differential DNA methylation at 53 sites in SAT from LBW vs normal birthweight (NBW) men (false discovery rate <5%), including sites in the FADS2 and CPLX1 genes previously associated with type 2 diabetes. When we used reference-free cell mixture adjustments to potentially adjust for cell composition, 4,323 sites had differential methylation in LBW vs NBW men. However, no differences in SAT gene expression levels were identified between LBW and NBW men. In the combined group of all 40 participants, 3,276 genes (16.5%) were differentially expressed in SAT after HFO (false discovery rate <5%) and there was no difference between LBW men and controls. The most strongly upregulated genes were ELOVL6, FADS2 and NNAT; in contrast, INSR, IRS2 and the SLC27A2 fatty acid transporter showed decreased expression after HFO. Interestingly, SLC27A2 expression correlated negatively with diabetes- and obesity-related traits in a replication cohort of 142 individuals. DNA methylation at 652 CpG sites (including in CDK5, IGFBP5 and SLC2A4) was altered in SAT after overfeeding in this and in another cohort. Young men who had a LBW exhibit epigenetic alterations in their adipose tissue that potentially influence insulin resistance and risk of type 2 diabetes. Short-term overfeeding influences gene transcription and, to some extent, DNA methylation in adipose tissue; there was no major difference in this response between LBW and control participants.

Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications

NASA Astrophysics Data System (ADS)

Alimardani, N.; Conley, J. F.

2013-09-01

We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction processes as a function of temperature in MIM devices with Nb2O5 and Ta2O5 high electron affinity insulators. For both Nb2O5 and Ta2O5 insulators, the dominant conduction process is established as Schottky emission at small biases and Frenkel-Poole emission at large biases. The energy depth of the traps that dominate Frenkel-Poole emission in each material are estimated.

Low-voltage high-speed programming gate-all-around floating gate memory cell with tunnel barrier engineering

NASA Astrophysics Data System (ADS)

Hamzah, Afiq; Ezaila Alias, N.; Ismail, Razali

2018-06-01

The aim of this study is to investigate the memory performances of gate-all-around floating gate (GAA-FG) memory cell implementing engineered tunnel barrier concept of variable oxide thickness (VARIOT) of low-k/high-k for several high-k (i.e., Si3N4, Al2O3, HfO2, and ZrO2) with low-k SiO2 using three-dimensional (3D) simulator Silvaco ATLAS. The simulation work is conducted by initially determining the optimized thickness of low-k/high-k barrier-stacked and extracting their Fowler–Nordheim (FN) coefficients. Based on the optimized parameters the device performances of GAA-FG for fast program operation and data retention are assessed using benchmark set by 6 and 8 nm SiO2 tunnel layer respectively. The programming speed has been improved and wide memory window with 30% increment from conventional SiO2 has been obtained using SiO2/Al2O3 tunnel layer due to its thin low-k dielectric thickness. Furthermore, given its high band edges only 1% of charge-loss is expected after 10 years of ‑3.6/3.6 V gate stress.

Investigation of microstructural and electrical properties of composition dependent co-sputtered Hf1-x Ta x O2 thin films

NASA Astrophysics Data System (ADS)

Das, K. C.; Tripathy, N.; Ghosh, S. P.; Mohanta, S. K.; Nakamura, A.; Kar, J. P.

2017-11-01

Tantalum doped HfO2 gate dielectric thin films were deposited on silicon substrates using RF reactive co-sputtering by varying RF power of Ta target from 15 W to 90 W. The morphological, compositional and electrical properties of Hf1-x Ta x O2 films were systematically investigated. The Ta content was found to be increased up to 21% for a Ta target power of 90 W. The evolution of monoclinic phase of Hf1-x Ta x O2 was seen from XRD study upto RF power of 60 W and afterwards, the amorphous like behaviour is appeared. The featureless smooth surface with the decrease in granular morphology has been observed from FESEM micrographs of the doped films at higher RF powers of Ta. The flatband voltage is found to be shifted towards negative voltage in the capacitance-voltage plot, which was attributed to the enhancement in positive oxide charge density with rise in RF power. The interface charge density has a minimum value of 7.85  ×  1011 eV-1 cm-2 for the film deposited at Ta RF power of 75 W. The Hf1-x Ta x O2 films deposited at Ta target RF power of 90 W has shown lower leakage current. The high on/off ratio of the current during the set process in Hf1-x Ta x O2 based memristors is found suitable for bipolar resistive switching memory device applications.

Promotion of Iron Oxide Reduction and Extracellular Electron Transfer in Shewanella oneidensis by DMSO

PubMed Central

Cheng, Yuan-Yuan; Li, Bing-Bing; Li, Dao-Bo; Chen, Jie-Jie; Li, Wen-Wei; Tong, Zhong-Hua; Wu, Chao; Yu, Han-Qing

2013-01-01

The dissimilatory metal reducing bacterium Shewanella oneidensis MR-1, known for its capacity of reducing iron and manganese oxides, has great environmental impacts. The iron oxides reducing process is affected by the coexistence of alternative electron acceptors in the environment, while investigation into it is limited so far. In this work, the impact of dimethyl sulphoxide (DMSO), a ubiquitous chemical in marine environment, on the reduction of hydrous ferric oxide (HFO) by S. oneidensis MR-1 was investigated. Results show that DMSO promoted HFO reduction by both wild type and ΔdmsE, but had no effect on the HFO reduction by ΔdmsB, indicating that such a promotion was dependent on the DMSO respiration. With the DMSO dosing, the levels of extracellular flavins and omcA expression were significantly increased in WT and further increased in ΔdmsE. Bioelectrochemical analysis show that DMSO also promoted the extracellular electron transfer of WT and ΔdmsE. These results demonstrate that DMSO could stimulate the HFO reduction through metabolic and genetic regulation in S. oneidensis MR-1, rather than compete for electrons with HFO. This may provide a potential respiratory pathway to enhance the microbial electron flows for environmental and engineering applications. PMID:24244312

Reactive transport modeling of subsurface arsenic removal systems in rural Bangladesh.

PubMed

Rahman, M M; Bakker, M; Patty, C H L; Hassan, Z; Röling, W F M; Ahmed, K M; van Breukelen, B M

2015-12-15

Subsurface Arsenic Removal (SAR) is a technique for in-situ removal of arsenic from groundwater. Extracted groundwater is aerated and re-injected into an anoxic aquifer, where the oxygen in the injected water reacts with ferrous iron in the aquifer to form hydrous ferric oxide (HFO). Subsequent extraction of groundwater contains temporarily lower As concentrations, because As sorbs onto the HFO. Injection, storage, and extraction together is called a cycle. A reactive transport model (RTM) was developed in PHREEQC to determine the hydrogeochemical processes responsible for As (im)mobilization during experimental SAR operation performed in Bangladesh. Oxidation of Fe(II) and As(III) were modeled using kinetic-rate expressions. Cation exchange, precipitation of HFO, and surface complexation, were modeled as equilibrium processes. A best set of surface complexation reactions and corresponding equilibrium constants was adopted from previous studies to simulate all 20 cycles of a SAR experiment. The model gives a reasonable match with observed concentrations of different elements in the extracted water (e.g., the r(2) value of As was 0.59 or higher). As concentrations in the extracted water are governed by four major processes. First, As concentration decreases in response to the elevated pH of injection water and likewise increases when native neutral pH groundwater flows in. Second, the sorption capacity for As increases due to the gradual buildup of HFO. Third, As sorption is enhanced by preferential removal of As(V). Fourth, competitive sorption of Si limits the capacity of freshly precipitated HFO for As sorption. Transferability of the developed reactive transport model was demonstrated through successful application of the model, without further calibration, to two additional SAR sites in Bangladesh. This gives confidence that the model could be useful to assess potential SAR performance at locations in Bangladesh based on local hydrogeochemical conditions. Copyright © 2015 Elsevier B.V. All rights reserved.

High-frequency oscillations, extent of surgical resection, and surgical outcome in drug-resistant focal epilepsy

PubMed Central

Haegelen, Claire; Perucca, Piero; Châtillon, Claude-Edouard; Andrade-Valença, Luciana; Zelmann, Rina; Jacobs, Julia; Collins, D. Louis; Dubeau, François; Olivier, André; Gotman, Jean

2013-01-01

Summary Purpose Removal of areas generating high-frequency oscillations (HFOs) recorded from the intracerebral electroencephalography (iEEG) of patients with medically intractable epilepsy has been found to be correlated with improved surgical outcome. However, whether differences exist according to the type of epilepsy is largely unknown. We performed a comparative assessment of the impact of removing HFO-generating tissue on surgical outcome between temporal lobe epilepsy (TLE) and extratemporal lobe epilepsy (ETLE). We also assessed the relationship between the extent of surgical resection and surgical outcome. Methods We studied 30 patients with drug-resistant focal epilepsy, 21 with TLE and 9 with ETLE. Two thirds of the patients were included in a previous report and for these, clinical and imaging data were updated and follow-up was extended. All patients underwent iEEG investigations (500 Hz high-pass filter and 2,000 Hz sampling rate), surgical resection, and postoperative magnetic resonance imaging (MRI). HFOs (ripples, 80–250 Hz; fast ripples, >250 Hz) were identified visually on a 5–10 min interictal iEEG sample. HFO rates inside versus outside the seizure-onset zone (SOZ), in resected versus nonresected tissue, and their association with surgical outcome (ILAE classification) were assessed in the entire cohort, and in the TLE and ETLE subgroups. We also tested the correlation of resected brain hippocampal and amygdala volumes (as measured on postoperative MRIs) with surgical outcome. Key Findings HFO rates were significantly higher inside the SOZ than outside in the entire cohort and TLE subgroup, but not in the ETLE subgroup. In all groups, HFO rates did not differ significantly between resected and nonresected tissue. Surgical outcome was better when higher HFO rates were included in the surgical resection in the entire cohort and TLE subgroup, but not in the ETLE subgroup. Resected brain hippocampal and amygdala volumes were not correlated with surgical outcome. Significance In TLE, removal of HFO-generating areas may lead to improved surgical outcome. Less consistent findings emerge from ETLE, but these may be related to sample size limitations of this study. Size of resection, a factor that was ignored and that could have affected results of earlier studies did not influence results. PMID:23294353

What are the assets and weaknesses of HFO detectors? A benchmark framework based on realistic simulations

PubMed Central

Pizzo, Francesca; Bartolomei, Fabrice; Wendling, Fabrice; Bénar, Christian-George

2017-01-01

High-frequency oscillations (HFO) have been suggested as biomarkers of epileptic tissues. While visual marking of these short and small oscillations is tedious and time-consuming, automatic HFO detectors have not yet met a large consensus. Even though detectors have been shown to perform well when validated against visual marking, the large number of false detections due to their lack of robustness hinder their clinical application. In this study, we developed a validation framework based on realistic and controlled simulations to quantify precisely the assets and weaknesses of current detectors. We constructed a dictionary of synthesized elements—HFOs and epileptic spikes—from different patients and brain areas by extracting these elements from the original data using discrete wavelet transform coefficients. These elements were then added to their corresponding simulated background activity (preserving patient- and region- specific spectra). We tested five existing detectors against this benchmark. Compared to other studies confronting detectors, we did not only ranked them according their performance but we investigated the reasons leading to these results. Our simulations, thanks to their realism and their variability, enabled us to highlight unreported issues of current detectors: (1) the lack of robust estimation of the background activity, (2) the underestimated impact of the 1/f spectrum, and (3) the inadequate criteria defining an HFO. We believe that our benchmark framework could be a valuable tool to translate HFOs into a clinical environment. PMID:28406919

41 CFR 109-1.5304 - Deviations.

Code of Federal Regulations, 2010 CFR

2010-07-01

... High Risk Personal Property § 109-1.5304 Deviations. (a) Life cycle control determinations. When the HFO approves a contractor program containing controls, other than life cycle control consistent with... Secretary for Procurement and Assistance Management. A HFO's decision not to provide life-cycle control...

41 CFR 109-1.5304 - Deviations.

Code of Federal Regulations, 2013 CFR

2013-07-01

... High Risk Personal Property § 109-1.5304 Deviations. (a) Life cycle control determinations. When the HFO approves a contractor program containing controls, other than life cycle control consistent with... Secretary for Procurement and Assistance Management. A HFO's decision not to provide life-cycle control...

41 CFR 109-1.5304 - Deviations.

Code of Federal Regulations, 2014 CFR

2014-01-01

... High Risk Personal Property § 109-1.5304 Deviations. (a) Life cycle control determinations. When the HFO approves a contractor program containing controls, other than life cycle control consistent with... Secretary for Procurement and Assistance Management. A HFO's decision not to provide life-cycle control...

41 CFR 109-1.5304 - Deviations.

Code of Federal Regulations, 2012 CFR

2012-01-01

... High Risk Personal Property § 109-1.5304 Deviations. (a) Life cycle control determinations. When the HFO approves a contractor program containing controls, other than life cycle control consistent with... Secretary for Procurement and Assistance Management. A HFO's decision not to provide life-cycle control...

41 CFR 109-1.5304 - Deviations.

Code of Federal Regulations, 2011 CFR

2011-01-01

... High Risk Personal Property § 109-1.5304 Deviations. (a) Life cycle control determinations. When the HFO approves a contractor program containing controls, other than life cycle control consistent with... Secretary for Procurement and Assistance Management. A HFO's decision not to provide life-cycle control...

Electrical behaviour of fully solution processed HfO2 (MOS) in presence of different light illumination

NASA Astrophysics Data System (ADS)

Mondal, Sandip

2018-04-01

This experiment demonstrates the electrical behaviors of fully solution processed HfO2(MOS) in presence of different optical illumination. The capacitance voltage measurement was performed at frequency of 100 kHz with a DC gate sweep voltage of ±5V (with additional AC voltage of 100mV) in presence of deep UV (wavelength of 365nm with power of 25W) as well as white light (20W). It is found that there is a large shift in flatband voltage of 120mV due presence of white light during the CV measurement. However there is negligible change in flatband voltage (30mV) has been observed due to illumination of deep UV light.

Polarization-independent broadband dielectric bilayer gratings for spectral beam combining system

NASA Astrophysics Data System (ADS)

Li, Linxin; Liu, Quan; Chen, Junming; Wang, Leilei; Jin, Yunxia; Yang, Yifeng; Shao, Jianda

2017-02-01

We report on a polarization-independent all-dielectric trapezoidal bilayer grating with broadband and high diffraction efficiency. The bilayer trapezoidal grating ridge on a reflector consists of an HfO2 layer and a SiO2 layer. The theoretical -1st order efficiencies of the grating are more than 95% with wavelength range from 1010 nm to 1080 nm for both TE and TM polarizations. The fabrication tolerances depending on the HfO2 and SiO2 layer grating ridge depths are enough to obtain the designed grating using current craft. The fabricated grating with exceeding 94% efficiency from 1000 nm to 1085 nm measured by a non-polarization laser has been fabricated and applied in a spectral beam combining external cavity to combine eight beams into one beam output with 10.77 kW.

Electric field cycling behavior of ferroelectric hafnium oxide.

PubMed

Schenk, Tony; Schroeder, Uwe; Pešić, Milan; Popovici, Mihaela; Pershin, Yuriy V; Mikolajick, Thomas

2014-11-26

HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling behavior and the underlying defect mechanisms. Activation energies for wake-up and fatigue are extracted. Notably, all values are about 100 meV, which is 1 order of magnitude lower than for conventional ferroelectrics like lead zirconate titanate (PZT). This difference is mainly atttributed to the one to two orders of magnitude higher electric fields used for cycling and to the different surface to volume ratios between the 10 nm thin films in this study and the bulk samples of former measurements or simulations. Moreover, a new, analog-like split-up effect of switching peaks by field cycling is discovered and is explained by a network model based on memcapacitive behavior as a result of defect redistribution.

Optical and infrared properties of glancing angle-deposited nanostructured tungsten films

DOE PAGES

Ungaro, Craig; Shah, Ankit; Kravchenko, Ivan; ...

2015-02-06

For this study, nanotextured tungsten thin films were obtained on a stainless steel (SS) substrate using the glancing-angle-deposition (GLAD) method. It was found that the optical absorption and thermal emittance of the SS substrate can be controlled by varying the parameters used during deposition. Finite-difference time-domain (FDTD) simulations were used to predict the optical absorption and infrared (IR) reflectance spectra of the fabricated samples, and good agreement was found between simulated and measured data. FDTD simulations were also used to predict the effect of changes in the height and periodicity of the nanotextures. These simulations show that good control overmore » the absorption can be achieved by altering the height and periodicity of the nanostructure. These nanostructures were shown to be temperature stable up to 500°C with the addition of a protective HfO 2 layer. Finally, applications for this structure are explored, including a promising application for solar thermal energy systems.« less

Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis

NASA Astrophysics Data System (ADS)

Zhao, Peng; Khosravi, Ava; Azcatl, Angelica; Bolshakov, Pavel; Mirabelli, Gioele; Caruso, Enrico; Hinkle, Christopher L.; Hurley, Paul K.; Wallace, Robert M.; Young, Chadwin D.

2018-07-01

Border traps and interface traps in HfO2/few-layer MoS2 top-gate stacks are investigated by C–V characterization. Frequency dependent C–V data shows dispersion in both the depletion and accumulation regions for the MoS2 devices. The border trap density is extracted with a distributed model, and interface traps are analyzed using the high-low frequency and multi-frequency methods. The physical origins of interface traps appear to be caused by impurities/defects in the MoS2 layers, performing as band tail states, while the border traps are associated with the dielectric, likely a consequence of the low-temperature deposition. This work provides a method of using multiple C–V measurements and analysis techniques to analyze the behavior of high-k/TMD gate stacks and deconvolute border traps from interface traps.

Metal ion binding to iron oxides

NASA Astrophysics Data System (ADS)

Ponthieu, M.; Juillot, F.; Hiemstra, T.; van Riemsdijk, W. H.; Benedetti, M. F.

2006-06-01

The biogeochemistry of trace elements (TE) is largely dependent upon their interaction with heterogeneous ligands including metal oxides and hydrous oxides of iron. The modeling of TE interactions with iron oxides has been pursued using a variety of chemical models. The objective of this work is to show that it is possible to model the adsorption of protons and TE on a crystallized oxide (i.e., goethite) and on an amorphous oxide (HFO) in an identical way. Here, we use the CD-MUSIC approach in combination with valuable and reliable surface spectroscopy information about the nature of surface complexes of the TE. The other objective of this work is to obtain generic parameters to describe the binding of the following elements (Cd, Co, Cu, Ni, Pb, and Zn) onto both iron oxides for the CD-MUSIC approach. The results show that a consistent description of proton and metal ion binding is possible for goethite and HFO with the same set of model parameters. In general a good prediction of almost all the collected experimental data sets corresponding to metal ion binding to HFO is obtained. Moreover, dominant surface species are in agreement with the recently published surface complexes derived from X-ray absorption spectroscopy (XAS) data. Until more detailed information on the structure of the two iron oxides is available, the present option seems a reasonable approximation and can be used to describe complex geochemical systems. To improve our understanding and modeling of multi-component systems we need more data obtained at much lower metal ion to iron oxide ratios in order to be able to account eventually for sites that are not always characterized in spectroscopic studies.

New directions: Beyond sulphur, vanadium and nickel - About source apportionment of ship emissions in emission control areas

NASA Astrophysics Data System (ADS)

Czech, Hendryk; Schnelle-Kreis, Jürgen; Streibel, Thorsten; Zimmermann, Ralf

2017-08-01

During the oil crises of the 70s and the associated increase of the oil price, the usage of marine fuels shifted from middle distillates of the crude oil refinery, such as marine diesel oil (MDO) or marine gas oil (MGO), towards cheaper heavy fuel oils (HFO), or also called residual fuel oil. The latter refers to the vacuum residue of the crude oil refinery blended by lighter refinery products, such as kerosene, to meet a certain maximum viscosity. Those HFOs are rich in sulphur and heavy metals which end up as significant constituents in emitted fine particulate matter (PM2.5) after the combustion. Especially for harbour cities or highly frequented ship traffic routes, HFO-derived PM2.5 has been identified as a globally important perpetrator of increased mortality by cardiopulmonary diseases and lung cancer (e.g. Corbett et al., 2007). However, the emitted hazardous species provide reliable markers to assess the contribution of this emission source to air pollution in source apportionment studies. Such studies are often performed utilising positive matrix factorisation, whose score matrix can be interpreted as temporal contribution of k identified emission sources and factors represent the k corresponding emission profiles. If one of the k factors contains moderate to high amounts of sulphate, vanadium and nickel with a high ratio of the two latter ones, the ship identification was unambiguous (e.g. Viana et al., 2009). Even more sensitive towards emission profiles are receptor models such as chemical mass balance, which require detailed prior knowledge about the assumed emission sources (Jeong et al., 2017).

Soluble Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene Derivatives for Solution-Processed Organic Field-Effect Transistors.

PubMed

Sawamoto, Masanori; Kang, Myeong Jin; Miyazaki, Eigo; Sugino, Hiroyoshi; Osaka, Itaru; Takimiya, Kazuo

2016-02-17

We demonstrate a new approach to solution-processable dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) derivatives that can afford good thin-film transistors having mobilities higher than 0.1 cm(2) V(-1) s(-1). The key molecular design strategy is the introduction of one branched alkyl group at the edge of the DNTT core, which improves solubility while retaining semiconducting characteristics in the thin-film state. Dialkylation, i.e., the introduction of two branched alkyl groups on the DNTT core, had a detrimental effect on the semiconducting properties. Although the physicochemical properties of the mono- and dialkylated derivatives at the molecular level were almost the same, the thin-film absorption spectra and the ionization potentials (IPs) were markedly different, indicating that the intermolecular interaction in the thin-film state was affected by the number of alkyl groups. Indeed, the packing structures of the monoalkylated DNTTs in the thin-film state, which were estimated from the XRD patterns, were similar to that of parent DNTT, indicating the existence of the lamella structure with the herringbone packing motif. In sharp contrast, the XRD patterns of the dialkylated DNTT thin films showed poor crystallinity, and the packing structures were significantly different from that of parent DNTT. All the results of structural characterization in the thin-film state and evaluation of device characteristics of the DNTT derivatives with branched alkyl groups indicate that the introduction of a branched alkyl group in the molecular long-axis direction is an effective way to solubilize the rigid, largely π-extended organic semiconducting core without interfering with the semiconducting characteristics in the thin-film state.

Preloading hydrous ferric oxide into granular activated carbon for arsenic removal.

PubMed

Jang, Min; Chen, Weifang; Cannon, Fred S

2008-05-01

Arsenic is of concern in water treatment because of its health effects. This research focused on incorporating hydrous ferric oxide (HFO) into granular activated carbon (GAC) for the purpose of arsenic removal. Iron was incorporated into GAC via incipient wetness impregnation and cured at temperatures ranging from 60 to 90 degrees C. X-ray diffractions and arsenic sorption as a function of pH were conducted to investigate the effect of temperature on final iron oxide (hydroxide) and their arsenic removal capabilities. Results revealed that when curing at 60 degrees C, the procedure successfully created HFO in the pores of GAC, whereas at temperatures of 80 and 90 degrees C, the impregnated iron oxide manifested a more crystalline form. In the column tests using synthetic water, the HFO-loaded GAC prepared at 60 degrees C also showed higher sorption capacities than media cured at higher temperatures. These results indicated that the adsorption capacity for arsenic was closely related to the form of iron (hydr)oxide for a given iron content For the column test using a natural groundwater, HFO-loaded GAC (Fe, 11.7%) showed an arsenic sorption capacity of 26 mg As/g when the influent contained 300 microg/L As. Thus, the preloading of HFO into a stable GAC media offered the opportunity to employ fixed carbon bed reactors in water treatment plants or point-of-use filters for arsenic removal.

Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics

NASA Astrophysics Data System (ADS)

Triyoso, D. H.; Gregory, R.; Schaeffer, J. K.; Werho, D.; Li, D.; Marcus, S.; Wilk, G. D.

2007-11-01

TaCy has been reported to have the appropriate work function for negative metal-oxide semiconductor metal in high-k metal-oxide field-effect transistors. As device size continues to shrink, a conformal deposition for metal gate electrodes is needed. In this work, we report on the development and characterization of a novel TaCy process by atomic layer deposition (ALD). Detailed physical properties of TaCy films are studied using ellipsometry, a four-point probe, Rutherford backscattering spectrometry (RBS), x-ray photoelectron spectroscopy (XPS), and x-ray diffraction (XRD). RBS and XPS analysis indicate that TaCy films are near-stoichiometric, nitrogen free, and have low oxygen impurities. Powder XRD spectra showed that ALD films have a cubic microstructure. XPS carbon bonding studies revealed that little or no glassy carbon is present in the bulk of the film. Excellent electrical properties are obtained using ALD TaCy as a metal gate electrode. Well-behaved capacitance-voltage characteristics with ALD HfO2 gate dielectrics are demonstrated for TaCy thicknesses of 50, 100, and 250 Å. A low fixed charge (˜2-4×10-11 cm-2) is observed for all ALD HfO2/ALD TaCy devices. Increasing the thickness of ALD TaCy results in a decrease in work function (4.77 to 4.54 eV) and lower threshold voltages.

Operation of marine diesel engines on biogenic fuels: modification of emissions and resulting climate effects.

PubMed

Petzold, Andreas; Lauer, Peter; Fritsche, Uwe; Hasselbach, Jan; Lichtenstern, Michael; Schlager, Hans; Fleischer, Fritz

2011-12-15

The modification of emissions of climate-sensitive exhaust compounds such as CO(2), NO(x), hydrocarbons, and particulate matter from medium-speed marine diesel engines was studied for a set of fossil and biogenic fuels. Applied fossil fuels were the reference heavy fuel oil (HFO) and the low-sulfur marine gas oil (MGO); biogenic fuels were palm oil, soybean oil, sunflower oil, and animal fat. Greenhouse gas (GHG) emissions related to the production of biogenic fuels were treated by means of a fuel life cycle analysis which included land use changes associated with the growth of energy plants. Emissions of CO(2) and NO(x) per kWh were found to be similar for fossil fuels and biogenic fuels. PM mass emission was reduced to 10-15% of HFO emissions for all low-sulfur fuels including MGO as a fossil fuel. Black carbon emissions were reduced significantly to 13-30% of HFO. Changes in emissions were predominantly related to particulate sulfate, while differences between low-sulfur fossil fuels and low-sulfur biogenic fuels were of minor significance. GHG emissions from the biogenic fuel life cycle (FLC) depend crucially on energy plant production conditions and have the potential of shifting the overall GHG budget from positive to negative compared to fossil fuels.

High butter-fat diet and bisphenol A additively impair male rat spermatogenesis.

PubMed

Tarapore, Pheruza; Hennessy, Max; Song, Dan; Ying, Jun; Ouyang, Bin; Govindarajah, Vinothini; Leung, Yuet-Kin; Ho, Shuk-Mei

2017-03-01

Exposure to xenoestrogens is a probable cause of male infertility in humans. Consumption of high-fat diets and exposure to bisphenol A (BPA) is pervasive in America. Here, we test the hypothesis that gestational exposure to high dietary fats and/or BPA disrupt spermatogenesis in adulthood. Sprague-Dawley rats were fed diets containing 10kcal% butter fat (AIN), 39kcal% butter fat (HFB), or 39kcal% olive oil (HFO), with or without BPA (25μg/kg body weight/day) during pregnancy. One group of male offspring received testosterone (T)- and estradiol-17β (E2)-filled implants or sham-implants from postnatal day (PND)70-210. Another group was naturally aged to 18 months. We found that adult males with gestational exposure to BPA, HFB, or HFB+BPA, in both the aged group and the T+E2-implanted group, exhibited impairment of spermatogenesis. In contrast, gestational exposure to HFO or HFO+BPA did not affect spermatogenesis. Sham-implanted, gestational exposed groups also had normal spermatogenesis. Loss of ERα expression in round spermatids and premature expression of protamine-1 in diplotene spermatocytes were features associated with impaired spermatogenesis. Compared with the single-treatment groups, the HFB+BPA group experienced more severe effects, including atrophy. Copyright © 2016 Elsevier Inc. All rights reserved.

CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

PubMed Central

Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

2014-01-01

Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

Thin limit of the 6D Cascading DGP model

NASA Astrophysics Data System (ADS)

Sbisà, Fulvio

2018-05-01

A thin limit description of the 6D Cascading DGP model is derived, starting from a configuration where both the codimension-1 and the codimension-2 branes are thick. Postulating that the thicknesses of the two branes obey a hierarchic relation, the thin limit is executed in two steps. First the thin limit of the codimension-1 brane is executed, obtaining a system where a "ribbon" codimension-2 brane is embedded inside a thin codimension-1 brane with induced gravity, and then the thin limit of the ribbon brane is considered. By proposing a geometric ansatz on the limit configuration, the junction conditions which are to hold at the thin codimension-2 brane are derived. The latters are fully non-perturbative and covariant and, together with the Israel junction conditions at the codimension-1 brane and the Einstein equations in the bulk, constitute the looked-for thin limit formulation of the 6D Cascading DGP model. It is commented on how wide is the class of thin source configurations which can be placed on the thin codimension-2 brane.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, Tobias; Bertermann, Rüdiger; Rusch, George M.

2,3,3,3-Tetrafluoropropene (HFO-1234yf) is a novel refrigerant intended for use in mobile air conditioning. It showed a low potential for toxicity in rodents studies with most NOAELs well above 10,000 ppm in guideline compliant toxicity studies. However, a developmental toxicity study in rabbits showed mortality at exposure levels of 5,500 ppm and above. No lethality was observed at exposure levels of 2,500 and 4,000 ppm. Nevertheless, increased subacute inflammatory heart lesions were observed in rabbits at all exposure levels. Since the lethality in pregnant animals may be due to altered biotransformation of HFO-1234yf and to evaluate the potential risk to pregnantmore » women facing a car crash, this study compared the acute toxicity and biotransformation of HFO-1234yf in male, female and pregnant female rabbits. Animals were exposed to 50,000 ppm and 100,000 ppm for 1 h. For metabolite identification by {sup 19}F NMR and LC/MS-MS, urine was collected for 48 h after inhalation exposure. In all samples, the predominant metabolites were S-(3,3,3-trifluoro-2-hydroxypropanyl)-mercaptolactic acid and N-acetyl-S-(3,3,3-trifluoro-2-hydroxypropanyl)-L-cysteine. Since no major differences in urinary metabolite pattern were observed between the groups, only N-acetyl-S-(3,3,3-trifluoro-2-hydroxypropanyl)-L-cysteine excretion was quantified. No significant differences in recovery between non-pregnant (43.10 ± 22.35 μmol) and pregnant female (50.47 ± 19.72 μmol) rabbits were observed, male rabbits exposed to 100,000 ppm for one hour excreted 86.40 ± 38.87 μmol. Lethality and clinical signs of toxicity were not observed in any group. The results suggest that the lethality of HFO-1234yf in pregnant rabbits unlikely is due to changes in biotransformation patterns or capacity in pregnant rabbits. -- Highlights: ► No lethality and clinical signs were observed. ► No differences in metabolic pattern between pregnant and non-pregnant rabbits. ► Rapid and similar metabolite excretion in all groups. ► Very low amount of biotransformation in all groups (< 0.1%).« less

Electrical properties of graphene tunnel junctions with high-κ metal-oxide barriers

NASA Astrophysics Data System (ADS)

Feng, Ying; Trainer, Daniel J.; Chen, Ke

2017-04-01

An insulating barrier is one of the key components in electronic devices that makes use of quantum tunneling principles. Many metal-oxides have been used as a good barrier material in a tunnel junction for their large band gap, stable chemical properties and superb properties for forming a thin and pin-hole-free insulating layer. The reduced dimensions of transistors have led to the need for alternative, high dielectric constant (high-κ) oxides to replace conventional silicon-based dielectrics to reduce the leaking current induced by electron tunneling. On the other hand, a tunnel junction with one or both electrodes made of graphene may lead to novel applications due to the massless Dirac fermions from the graphene. Here we have fabricated sandwich-type graphene tunnel junctions with high-κ metal-oxides as barriers, including Al2O3, HfO2, ZrO2, and TiO2. Tunneling properties are investigated by observing the temperature and time dependences of the tunneling spectra. Our results show the potential for applications of high-κ oxides in graphene tunnel junctions and bringing new opportunities for memory and logic electronic devices.

Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe $${p}$$ MOSFETs

DOE PAGES

Duan, Guo Xing; Hachtel, Jordan A.; Zhang, En Xia; ...

2016-09-20

In this paper, we have measured the low-frequency 1/f noise of Si 0.55Ge 0.45 pMOSFETs with a Si capping layer and SiO 2/HfO 2/TiN gate stack as a function of frequency, gate voltage, and temperature (100-440 K). The magnitude of the excess drain voltage noise power spectral density (Svd) is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise at higher measuring temperatures is attributed primarily to oxygen-vacancy and hydrogen-related defects in the SiO 2 and HfO 2more » layers. Finally, at lower measuring temperatures, the noise also appears to be affected strongly by hydrogen-dopant interactions in the SiGe layer of the device.« less

Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

PubMed

Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

2017-12-01

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

Effect of structural evolution of ZnO/HfO2 nanocrystals on Eu2+/Eu3+ emission in glass-ceramic waveguides for photonic applications

NASA Astrophysics Data System (ADS)

Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

2018-06-01

Eu-doped 70SiO2–23HfO2–7ZnO (mol%) glass-ceramic waveguides have been fabricated by sol-gel method as a function of heat-treatment temperatures for on-chip blue-light emitting source applications. Structural evolution of spherical ZnO and spherical as well as rod-like HfO2 nanocrystalline structures have been observed with heat-treatments at different temperatures. Initially, in the as-prepared samples at 900 ◦C, both, Eu2+ as well as Eu3+ ions are found to be present in the ternary matrix. With controlled heat-treatments of up to 1000 ◦C for 2 h, local environment of Eu-ions become more crystalline in nature and the reduction of Eu3+ to Eu2+ takes place in such ZnO/HfO2 crystalline environments. In these ternary glass-ceramic waveguides, heat-treated at higher temperatures, the blue-light emission characteristic, which is the signature of 4f 65d \\to 4f 7 energy level transition of Eu2+ ions is found to be greatly enhanced. The as-prepared glass-ceramic waveguides exhibit a propagation loss of 0.4 ± 0.2 dB cm‑1 at 632.8 nm. Though the propagation losses increase with the growth of nanocrystals, the added functionalities achieved in the optimally heat-treated Eu-doped 70SiO2–23HfO2–7ZnO (mol%) waveguides, make them a viable functional optical material for the fabrication of on-chip blue-light emitting sources for integrated optic applications.

Effect of structural evolution of ZnO/HfO2 nanocrystals on Eu2+/Eu3+ emission in glass-ceramic waveguides for photonic applications.

PubMed

Ghosh, Subhabrata; Bhaktha B N, Shivakiran

2018-06-01

Eu-doped 70SiO 2 -23HfO 2 -7ZnO (mol%) glass-ceramic waveguides have been fabricated by sol-gel method as a function of heat-treatment temperatures for on-chip blue-light emitting source applications. Structural evolution of spherical ZnO and spherical as well as rod-like HfO 2 nanocrystalline structures have been observed with heat-treatments at different temperatures. Initially, in the as-prepared samples at 900 ◦ C, both, Eu 2+ as well as Eu 3+ ions are found to be present in the ternary matrix. With controlled heat-treatments of up to 1000 ◦ C for 2 h, local environment of Eu-ions become more crystalline in nature and the reduction of Eu 3+ to Eu 2+ takes place in such ZnO/HfO 2 crystalline environments. In these ternary glass-ceramic waveguides, heat-treated at higher temperatures, the blue-light emission characteristic, which is the signature of 4f 6 5d [Formula: see text] 4f 7 energy level transition of Eu 2+ ions is found to be greatly enhanced. The as-prepared glass-ceramic waveguides exhibit a propagation loss of 0.4 ± 0.2 dB cm -1 at 632.8 nm. Though the propagation losses increase with the growth of nanocrystals, the added functionalities achieved in the optimally heat-treated Eu-doped 70SiO 2 -23HfO 2 -7ZnO (mol%) waveguides, make them a viable functional optical material for the fabrication of on-chip blue-light emitting sources for integrated optic applications.

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

PubMed Central

Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

2016-01-01

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

NASA Astrophysics Data System (ADS)

Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

2016-06-01

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

Thin film optical coatings for the ultraviolet spectral region

NASA Astrophysics Data System (ADS)

Torchio, P.; Albrand, G.; Alvisi, M.; Amra, C.; Rauf, H.; Cousin, B.; Otrio, G.

2017-11-01

The applications and innovations related to the ultraviolet field are today in strong growth. To satisfy these developments which go from biomedical to the large equipment like the Storage Ring Free Electron Laser, it is crucial to control with an extreme precision the optical performances, in using the substrates and the thin film materials impossible to circumvent in this spectral range. In particular, the reduction of the losses by electromagnetic diffusion, Joule effect absorption, or the behavior under UV luminous flows of power, resistance to surrounding particulate flows... become top priority which concerns a broad European and international community. Our laboratory has the theoretical, experimental and technological tools to design and fabricate numerous multilayer coatings with desirable optical properties in the visible and infrared spectral ranges. We have extended our expertise to the ultraviolet. We present here some results on high reflectivity multidielectric mirrors towards 250 nm in wavelength, produced by Ion Plating Deposition. The latter technique allows us to obtain surface treatments with low absorption and high resistance. We give in this study the UV transparent materials and the manufacturing technology which have been the best suited to meet requirements. Single UV layers were deposited and characterized. HfO2/SiO2 mirrors with a reflectance higher than 99% at 300 nm were obtained. Optical and non-optical characterizations such as UV spectrophotometric measurements, X-Ray Diffraction spectra, Scanning Electron Microscope and Atomic Force Microscope images were performed

Single Crystal Fibers of Yttria-Stabilized Cubic Zirconia with Ternary Oxide Additions

NASA Technical Reports Server (NTRS)

Ritzert, F. J.; Yun, H. M.; Miner, R. V.

1997-01-01

Single crystal fibers of yttria (Y2O3)-stabilized cubic zirconia, (ZrO2) with ternary oxide additions were grown using the laser float zone fiber processing technique. Ternary additions to the ZrO2-Y2O3 binary system were studied aimed at increasing strength while maintaining the high coefficient of thermal expansion of the binary system. Statistical methods aided in identifying the most promising ternary oxide candidate (Ta2O5, Sc2O3, and HfO2) and optimum composition. The yttria, range investigated was 14 to 24 mol % and the ternary oxide component ranged from 1 to 5 mol %. Hafnium oxide was the most promising ternary oxide component based on 816 C tensile strength results and ease of fabrication. The optimum composition for development was 81 ZrO2-14 Y203-5 HfO2 based upon the same elevated temperature strength tests. Preliminary results indicate process improvements could improve the fiber performance. We also investigated the effect of crystal orientation on strength.

On gate stack scalability of double-gate negative-capacitance FET with ferroelectric HfO2 for energy efficient sub-0.2 V operation

NASA Astrophysics Data System (ADS)

Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

2018-02-01

We have investigated the gate stack scalability and energy efficiency of double-gate negative-capacitance FET (DGNCFET) with a CMOS-compatible ferroelectric HfO2 (FE:HfO2). Analytic model-based simulation is conducted to investigate the impacts of ferroelectric characteristic of FE:HfO2 and gate stack thickness on the I on/I off ratio of DGNCFET. DGNCFET has wider design window for the gate stack where higher I on/I off ratio can be achieved than DG classical MOSFET. Under a process-induced constraint with sub-10 nm gate length (L g), FE:HfO2-based DGNCFET still has a design point for high I on/I off ratio. With an optimized gate stack thickness for sub-10 nm L g, FE:HfO2-based DGNCFET has 2.5× higher energy efficiency than DG classical MOSFET even at ultralow operation voltage of sub-0.2 V.

Transformation toughened ceramics for the heavy duty diesel engine technology program

NASA Technical Reports Server (NTRS)

Musikant, S.; Feingold, E.; Rauch, H.; Samanta, S.

1984-01-01

The objective of this program is to develop an advanced high temperature oxide structural ceramic for application to the heavy duty diesel engine. The approach is to employ transformation toughening by additions of ZrO.5HfO.5O2 solid solution to the oxide ceramics, mullite (2Al2O3S2SiO2) and alumina (Al2O3). The study is planned for three phases, each 12 months in duration. This report covers Phase 1. During this period, processing techniques were developed to incorporate the ZrO.5HfO.5O2 solid solution in the matrices while retaining the necessary metastable tetragonal phase. Modulus of rupture and of elasticity, coefficient of thermal expansion, fracture toughness by indent technique and thermal diffusivity of representative specimens were measured. In Phase 2, the process will be improved to provide higher mechanical strength and to define the techniques for scale up to component size. In Phase 3, full scale component prototypes will be fabri-]cated.

Particulate matter from both heavy fuel oil and diesel fuel shipping emissions show strong biological effects on human lung cells at realistic and comparable in vitro exposure conditions.

PubMed

Oeder, Sebastian; Kanashova, Tamara; Sippula, Olli; Sapcariu, Sean C; Streibel, Thorsten; Arteaga-Salas, Jose Manuel; Passig, Johannes; Dilger, Marco; Paur, Hanns-Rudolf; Schlager, Christoph; Mülhopt, Sonja; Diabaté, Silvia; Weiss, Carsten; Stengel, Benjamin; Rabe, Rom; Harndorf, Horst; Torvela, Tiina; Jokiniemi, Jorma K; Hirvonen, Maija-Riitta; Schmidt-Weber, Carsten; Traidl-Hoffmann, Claudia; BéruBé, Kelly A; Wlodarczyk, Anna J; Prytherch, Zoë; Michalke, Bernhard; Krebs, Tobias; Prévôt, André S H; Kelbg, Michael; Tiggesbäumker, Josef; Karg, Erwin; Jakobi, Gert; Scholtes, Sorana; Schnelle-Kreis, Jürgen; Lintelmann, Jutta; Matuschek, Georg; Sklorz, Martin; Klingbeil, Sophie; Orasche, Jürgen; Richthammer, Patrick; Müller, Laarnie; Elsasser, Michael; Reda, Ahmed; Gröger, Thomas; Weggler, Benedikt; Schwemer, Theo; Czech, Hendryk; Rüger, Christopher P; Abbaszade, Gülcin; Radischat, Christian; Hiller, Karsten; Buters, Jeroen T M; Dittmar, Gunnar; Zimmermann, Ralf

2015-01-01

Ship engine emissions are important with regard to lung and cardiovascular diseases especially in coastal regions worldwide. Known cellular responses to combustion particles include oxidative stress and inflammatory signalling. To provide a molecular link between the chemical and physical characteristics of ship emission particles and the cellular responses they elicit and to identify potentially harmful fractions in shipping emission aerosols. Through an air-liquid interface exposure system, we exposed human lung cells under realistic in vitro conditions to exhaust fumes from a ship engine running on either common heavy fuel oil (HFO) or cleaner-burning diesel fuel (DF). Advanced chemical analyses of the exhaust aerosols were combined with transcriptional, proteomic and metabolomic profiling including isotope labelling methods to characterise the lung cell responses. The HFO emissions contained high concentrations of toxic compounds such as metals and polycyclic aromatic hydrocarbon, and were higher in particle mass. These compounds were lower in DF emissions, which in turn had higher concentrations of elemental carbon ("soot"). Common cellular reactions included cellular stress responses and endocytosis. Reactions to HFO emissions were dominated by oxidative stress and inflammatory responses, whereas DF emissions induced generally a broader biological response than HFO emissions and affected essential cellular pathways such as energy metabolism, protein synthesis, and chromatin modification. Despite a lower content of known toxic compounds, combustion particles from the clean shipping fuel DF influenced several essential pathways of lung cell metabolism more strongly than particles from the unrefined fuel HFO. This might be attributable to a higher soot content in DF. Thus the role of diesel soot, which is a known carcinogen in acute air pollution-induced health effects should be further investigated. For the use of HFO and DF we recommend a reduction of carbonaceous soot in the ship emissions by implementation of filtration devices.

Spontaneous ripples in the hippocampus correlate with epileptogenicity and not memory function in patients with refractory epilepsy.

PubMed

Jacobs, Julia; Banks, Sarah; Zelmann, Rina; Zijlmans, Maeike; Jones-Gotman, Marilyn; Gotman, Jean

2016-09-01

High-frequency oscillations (HFOs, 80-500Hz) are newly-described EEG markers of epileptogenicity. The proportion of physiological and pathological HFOs is unclear, as frequency analysis is insufficient for separating the two types of events. For instance, ripples (80-250Hz) also occur physiologically during memory consolidation processes in medial temporal lobe structures. We investigated the correlation between HFO rates and memory performance. Patients investigated with bilateral medial temporal electrodes and an intellectual capacity allowing for memory testing were included. High-frequency oscillations were visually marked, and rates of HFOs were calculated for each channel during slow-wave sleep. Patients underwent three verbal and three nonverbal memory tests. They were grouped into severe impairment, some impairment, mostly intact, or intact for verbal and nonverbal memory. We calculated a Pearson correlation between HFO rates in the hippocampi and the memory category and compared HFO rates in each hippocampus with the corresponding (verbal - left, nonverbal - right) memory result using Wilcoxon rank-sum test. Twenty patients were included; ten had bilateral, five had unilateral, and five had no memory impairment. Unilateral memory impairment was verbal in one patient and nonverbal in four. There was no correlation between HFO rates and memory performance in seizure onset areas. There was, however, a significant negative correlation between the overall memory performance and ripple rates (r=-0.50, p=0.03) outside the seizure onset zone. Our results suggest that the majority of spontaneous hippocampal ripples, as defined in the present study, may reflect pathological activity, taking into account the association with memory impairment. The absence of negative correlation between memory performance and HFO rates in seizure onset areas could be explained by HFO rates in the SOZ being generally so high that differences between areas with remaining and impaired memory function cannot be seen. Copyright © 2016 Elsevier Inc. All rights reserved.

Particulate Matter from Both Heavy Fuel Oil and Diesel Fuel Shipping Emissions Show Strong Biological Effects on Human Lung Cells at Realistic and Comparable In Vitro Exposure Conditions

PubMed Central

Dilger, Marco; Paur, Hanns-Rudolf; Schlager, Christoph; Mülhopt, Sonja; Diabaté, Silvia; Weiss, Carsten; Stengel, Benjamin; Rabe, Rom; Harndorf, Horst; Torvela, Tiina; Jokiniemi, Jorma K.; Hirvonen, Maija-Riitta; Schmidt-Weber, Carsten; Traidl-Hoffmann, Claudia; BéruBé, Kelly A.; Wlodarczyk, Anna J.; Prytherch, Zoë; Michalke, Bernhard; Krebs, Tobias; Prévôt, André S. H.; Kelbg, Michael; Tiggesbäumker, Josef; Karg, Erwin; Jakobi, Gert; Scholtes, Sorana; Schnelle-Kreis, Jürgen; Lintelmann, Jutta; Matuschek, Georg; Sklorz, Martin; Klingbeil, Sophie; Orasche, Jürgen; Richthammer, Patrick; Müller, Laarnie; Elsasser, Michael; Reda, Ahmed; Gröger, Thomas; Weggler, Benedikt; Schwemer, Theo; Czech, Hendryk; Rüger, Christopher P.; Abbaszade, Gülcin; Radischat, Christian; Hiller, Karsten; Buters, Jeroen T. M.; Dittmar, Gunnar; Zimmermann, Ralf

2015-01-01

Background Ship engine emissions are important with regard to lung and cardiovascular diseases especially in coastal regions worldwide. Known cellular responses to combustion particles include oxidative stress and inflammatory signalling. Objectives To provide a molecular link between the chemical and physical characteristics of ship emission particles and the cellular responses they elicit and to identify potentially harmful fractions in shipping emission aerosols. Methods Through an air-liquid interface exposure system, we exposed human lung cells under realistic in vitro conditions to exhaust fumes from a ship engine running on either common heavy fuel oil (HFO) or cleaner-burning diesel fuel (DF). Advanced chemical analyses of the exhaust aerosols were combined with transcriptional, proteomic and metabolomic profiling including isotope labelling methods to characterise the lung cell responses. Results The HFO emissions contained high concentrations of toxic compounds such as metals and polycyclic aromatic hydrocarbon, and were higher in particle mass. These compounds were lower in DF emissions, which in turn had higher concentrations of elemental carbon (“soot”). Common cellular reactions included cellular stress responses and endocytosis. Reactions to HFO emissions were dominated by oxidative stress and inflammatory responses, whereas DF emissions induced generally a broader biological response than HFO emissions and affected essential cellular pathways such as energy metabolism, protein synthesis, and chromatin modification. Conclusions Despite a lower content of known toxic compounds, combustion particles from the clean shipping fuel DF influenced several essential pathways of lung cell metabolism more strongly than particles from the unrefined fuel HFO. This might be attributable to a higher soot content in DF. Thus the role of diesel soot, which is a known carcinogen in acute air pollution-induced health effects should be further investigated. For the use of HFO and DF we recommend a reduction of carbonaceous soot in the ship emissions by implementation of filtration devices. PMID:26039251

Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Zhu, Dongming

2014-01-01

Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when integrated with advanced EBC top coats, showed promise to achieve 1500 C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and long-term durability.

Thermochemistry of amorphous and crystalline zirconium and hafnium silicates.

NASA Astrophysics Data System (ADS)

Ushakov, S.; Brown, C. E.; Navrotsky, Alexandra; Boatner, L. A.; Demkov, A. A.; Wang, C.; Nguyen, B.-Y.

2003-03-01

Calorimetric investigation of amorphous and crystalline zirconium and hafnium silicates was performed as part of a research program on thermochemistry of alternative gate dielectrics. Amorphous hafnium and zirconium silicates with varying SiO2 content were synthesized by a sol-gel process. Crystalline zirconium and hafnium silicates (zircon and hafnon) were synthesized by solid state reaction at 1450 °C from amorphous gels and grown as single crystals from flux. High temperature oxide melt solution calorimetry in lead borate (2PbO.B2O3) solvent at 800 oC was used to measure drop solution enthalpies for amorphous and crystalline zirconium and hafnium silicates and corresponding oxides. Applying appropriate thermochemical cycles, formation enthalpy of crystalline ZrSiO4 (zircon) from binary oxides (baddeleite and quartz) at 298 K was calculated as -23 +/-2 kJ/mol and enthalpy difference between amorphous and crystalline zirconium silicate (vitrification enthalpy) was found to be 61 +/-3 kJ/mol. Crystallization onset temperatures of amorphous zirconium and hafnium silicates, as measured by differential scanning calorimetry (DSC), increased with silica content. The resulting crystalline phases, as characterized by X-ray diffraction (XRD), were tetragonal HfO2 and ZrO2. Critical crystallite size for tetragonal to monoclinic transformation of HfO2 in the gel was estimated as 6 +/-2 nm from XRD data Crystallization enthalpies per mole of hafnia and zirconia in gels decrease slightly together with crystallite size with increasing silica content, for example from -22 to -15 +/-1 kJ per mol of HfO2 crystallized at 740 and 1006 °C from silicates with 10 and 70 mol Applications of thermal analyses and solution calorimetry techniques together with first-principles density functional calculations to estimate interface and surface energies are discussed.

Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

NASA Astrophysics Data System (ADS)

Winkowski, P.; Marszałek, Konstanty W.

2013-07-01

Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

Fabrication of Hydrogenated Diamond Metal-Insulator-Semiconductor Field-Effect Transistors.

PubMed

Liu, Jiangwei; Koide, Yasuo

2017-01-01

Diamond is regarded as a promising material for fabrication of high-power and high-frequency electronic devices due to its remarkable intrinsic properties, such as wide band gap energy, high carrier mobility, and high breakdown field. Meanwhile, since diamond has good biocompatibility, long-term durability, good chemical inertness, and a large electron-chemical potential window, it is a suitable candidate for the fabrication of biosensors. Here, we demonstrate the fabrication of hydrogenated diamond (H-diamond) based metal-insulator-semiconductor field-effect transistors (MISFETs). The fabrication is based on the combination of laser lithography, dry-etching, atomic layer deposition (ALD), sputtering deposition (SD), electrode evaporation, and lift-off techniques. The gate insulator is high-k HfO 2 with a SD/ALD bilayer structure. The thin ALD-HfO 2 film (4.0 nm) acts as a buffer layer to prevent the hydrogen surface of the H-diamond from plasma discharge damage during the SD-HfO 2 deposition. The growth of H-diamond epitaxial layer, fabrication of H-diamond MISFETs, and electrical property measurements for the MISFETs is demonstrated. This chapter explains the fabrication of H-diamond FET based biosensors.

Wavelength-selective thermal emitters using Si-rods on MgO

NASA Astrophysics Data System (ADS)

Suemitsu, Masahiro; Asano, Takashi; De Zoysa, Menaka; Noda, Susumu

2018-01-01

Supporting substrates for Si rod-type photonic crystals (PCs) are investigated for realizing highly wavelength-selective near-infrared thermal emitters. Three materials—SiO2, Al2O3, and MgO—are considered for their low infrared emission (transparency) and remarkable heat resistance. Theoretical calculations of the emissivity spectra of Si-rod PCs (rod height = 500 nm, rod diameter = 300 nm, and lattice constant = 600 nm) on 50 μm-thick supporting substrates at 1400 K indicate that the long-wavelength (>3 μm) emission power from the emitter using MgO is less than 1/10 of that of the other two materials. Fabrication of the Si-rod PCs on the 50 μm-thick MgO substrate requires the insertion of a thin (30 nm) HfO2 film between MgO and Si to improve the stability at high temperatures (>1400 K). Experimental results of the fabricated structure show that at 1400 K, the ratio of emissive power at wavelengths <1.8 μm to the total emissive power is 34% and that this can be increased to over 53% in an optimized rod-array structure with a 10 μm-thick MgO substrate.

Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

NASA Astrophysics Data System (ADS)

He, Long-Fei; Zhu, Hao; Xu, Jing; Liu, Hao; Nie, Xin-Ran; Chen, Lin; Sun, Qing-Qing; Xia, Yang; Wei Zhang, David

2017-11-01

The continuous scaling and challenges in device integrations in modern portable electronic products have aroused many scientific interests, and a great deal of effort has been made in seeking solutions towards a more microminiaturized package assembled with smaller and more powerful components. In this study, an embedded light-erasable charge-trapping memory with a high-k dielectric stack (Al2O3/HfO2/Al2O3) and an atomically thin MoS2 channel has been fabricated and fully characterized. The memory exhibits a sufficient memory window, fast programming and erasing (P/E) speed, and high On/Off current ratio up to 107. Less than 25% memory window degradation is observed after projected 10-year retention, and the device functions perfectly after 8000 P/E operation cycles. Furthermore, the programmed device can be fully erased by incident light without electrical assistance. Such excellent memory performance originates from the intrinsic properties of two-dimensional (2D) MoS2 and the engineered back-gate dielectric stack. Our integration of 2D semiconductors in the infrastructure of light-erasable charge-trapping memory is very promising for future system-on-panel applications like storage of metadata and flexible imaging arrays.

[Anaerobic reduction of humus/Fe (III) and electron transport mechanism of Fontibacter sp. SgZ-2].

PubMed

Ma, Chen; Yang, Gui-qin; Lu, Qin; Zhou, Shun-gui

2014-09-01

Humus and Fe(III) respiration are important extracellular respiration metabolism. Electron transport pathway is the key issue of extracellular respiration. To understand the electron transport properties and the environmental behavior of a novel Fe(III)- reducing bacterium, Fontibacter sp. SgZ-2, capacities of anaerobic humus/Fe(III) reduction and electron transport mechanisms with four electron acceptors were investigated in this study. The results of anaerobic batch experiments indicated that strain SgZ-2 had the ability to reduce humus analog [ 9,10-anthraquinone-2,6-disulfonic acid (AQDS) and 9,10-anthraquinone-2-sulfonic acid (AQS)], humic acids (HA), soluble Fe(III) (Fe-EDTA and Fe-citrate) and Fe(III) oxides [hydrous ferric oxide (HFO)]. Fermentative sugars (glucose and sucrose) were the most effective electron donors in the humus/Fe(III) reduction by strain SgZ-2. Additionally, differences of electron carrier participating in the process of electron transport with different electron acceptors (i. e. , oxygen, AQS, Fe-EDTA and HFO) were investigated using respiratory inhibitors. The results suggested that similar respiratory chain components were involved in the reducing process of oxygen and Fe-EDTA, including dehydrogenase, quinones and cytochromes b-c. In comparison, only dehydrogenase was found to participate in the reduction of AQS and HFO. In conclusion, different electron transport pathways may be employed by strain SgZ-2 between insoluble and soluble electron acceptors or among soluble electron acceptors. Preliminary models of electron transport pathway with four electron acceptors were proposed for strain SgZ-2, and the study of electron transport mechanism was explored to the genus Fontibacter. All the results from this study are expected to help understand the electron transport properties and the environmental behavior of the genus Fontibacter.

X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires

NASA Astrophysics Data System (ADS)

Eymery, J.; Favre-Nicolin, V.; Fröberg, L.; Samuelson, L.

2009-03-01

Wrap-gate (111) InAs nanowires (NWs) were studied after HfO2 dielectric coating and Cr metallic deposition by a combination of grazing incidence x-ray techniques. In-plane and out-of-plane x-ray diffraction (crystal truncation rod analysis) allow determining the strain tensor. The longitudinal contraction, increasing with HfO2 and Cr deposition, is significantly larger than the radial dilatation. For the Cr coating, the contraction along the growth axis is quite large (-0.95%), and the longitudinal/radial deformation ratio is >10, which may play a role on the NW transport properties. Small angle x-ray scattering shows a smoothening of the initial hexagonal bare InAs NW shape and gives the respective core/shell thicknesses, which are compared to flat surface values.

Carbon-coated ZnO mat passivation by atomic-layer-deposited HfO2 as an anode material for lithium-ion batteries.

PubMed

Jung, Mi-Hee

2017-11-01

ZnO has had little consideration as an anode material in lithium-ion batteries compared with other transition-metal oxides due to its inherent poor electrical conductivity and large volume expansion upon cycling and pulverization of ZnO-based electrodes. A logical design and facile synthesis of ZnO with well-controlled particle sizes and a specific morphology is essential to improving the performance of ZnO in lithium-ion batteries. In this paper, a simple approach is reported that uses a cation surfactant and a chelating agent to synthesize three-dimensional hierarchical nanostructured carbon-coated ZnO mats, in which the ZnO mats are composed of stacked individual ZnO nanowires and form well-defined nanoporous structures with high surface areas. In order to improve the performance of lithium-ion batteries, HfO 2 is deposited on the carbon-coated ZnO mat electrode via atomic layer deposition. Lithium-ion battery devices based on the carbon-coated ZnO mat passivation by atomic layer deposited HfO 2 exhibit an excellent initial discharge and charge capacities of 2684.01 and 963.21mAhg -1 , respectively, at a current density of 100mAg -1 in the voltage range of 0.01-3V. They also exhibit cycle stability after 125 cycles with a capacity of 740mAhg -1 and a remarkable rate capability. Copyright © 2017 Elsevier Inc. All rights reserved.

Influence of enamel composite thickness on value, chroma and translucency of a high and a nonhigh refractive index resin composite.

PubMed

Ferraris, Federico; Diamantopoulou, Sofia; Acunzo, Raffaele; Alcidi, Renato

2014-01-01

To evaluate the influence of thickness on the optical properties of two enamel shade composites, one with a high refractive index and one traditional. A medium value enamel shade was selected from the resin composites Enamel Plus HRi (UE2) and Enamel Plus HFO (GE2). Enamel Plus HRi is a high refractive index composite. Samples were fabricated in five different thicknesses: 0.3, 0.5, 1, 1.5 and 2 mm. Three specimens per material and thickness were fabricated. Three measurements per sample, over white, black and dentin composite background were generated with a spectrophotometer (Spectroshade Micro, MHT). Value, chroma, translucency and color differences (ΔE) of the specimens were calculated. RESULTS were analyzed by the Pearson correlation test, ANOVA and a post-hoc Tukey test. Increasing the thickness of the enamel layers decreased the translucency and the chroma of the substrate for both materials tested. For HRi the increase of the thickness resulted in an increase of the value, whereas for HFO it resulted in a reduction of the value. The two composites showed a significant difference in value for each thickness, but not in translucency and chroma. Color difference between them was perceptible in layers equal or higher than 0.5 mm. The high refractive index enamel (HRi) composite exhibits different optical behavior compared to the traditional one (HFO). HRi enamel composite behaves more like natural enamel as by increasing the thickness of the enamel layer, the value also increases.

The effect of dopamine receptor blockade in the rodent nucleus accumbens on local field potential oscillations and motor activity in response to ketamine.

PubMed

Matulewicz, Pawel; Kasicki, Stefan; Hunt, Mark Jeremy

2010-12-17

Altered functioning of the nucleus accumbens (NAc) has been implicated in the psychotomimetic actions of NMDA receptor (NMDAR) antagonists and the pathophysiology of schizophrenia. We have shown previously that NMDAR antagonists enhance the power of high-frequency oscillations (HFO) in the NAc in a dose-dependent manner, as well as increase locomotor activity. Systemic administration of NMDAR antagonists is known to increase the release of dopamine in the NAc and dopamine antagonists can reduce ketamine-induced hyperactivity. In this study, we examined the effect of 0.5 μl intra-NAc infusion of 3.2 μg SCH23390 (D1 antagonist), 10 μg raclopride (D2 antagonist) and saline on ketamine-induced changes in motor and oscillatory activity. We found that local blockade of D1 receptors attenuated ketamine-induced increases in motor activity and blockade of D2 receptors produced a much weaker effect, with respect to saline-infused control groups. In contrast, none of the antagonists, infused separately or together, significantly modified the power or dominant frequency of ketamine-induced increases in HFO, but changes in delta and theta frequency bands were observed. Together, these findings suggest, that, in contrast to delta and theta frequency bands, the generation of ketamine enhanced-HFO in the NAc is not causally related to locomotor activation and occurs largely independently of local changes in dopamine receptor activation. Copyright © 2010 Elsevier B.V. All rights reserved.

Exploratory experiments to determine the effect of alternative operations on the efficiency of subsurface arsenic removal in rural Bangladesh

NASA Astrophysics Data System (ADS)

Rahman, M. M.; Bakker, M.; Freitas, S. C. Borges; van Halem, D.; van Breukelen, B. M.; Ahmed, K. M.; Badruzzaman, A. B. M.

2015-02-01

The principle of subsurface arsenic (As) removal (SAR) is to extract anoxic groundwater, aerate it and re-inject it. Oxygen in the injected water reacts with iron in the resident groundwater to form hydrous ferric oxide (HFO). Dissolved As sorbs onto the HFO, which allows for the extraction of groundwater with lower As concentrations. SAR was applied at a rural location in Bangladesh (As in groundwater = 200 μg/L) to study the effect of different operational parameters on SAR performance, including repeated injection and extraction of an equal volume, lower pumping rate, and intermittent pumping. Larger injection volume, lower pumping rate, and intermittent pumping all had positive effects on As removal indicating that As adsorption is kinetically limited. Repeated injection-extraction of an equal volume improved As removal efficiency by providing more HFO for sorption. After injection of 1,000 L, a maximum of 3,000 L of `safe' water, as defined by the Bangladesh national standard for As (<50 μg/L), was extracted, of which 2,000 L can be used as drinking water and the remainder is used for re-injection. Under this setup, the estimated cost for 1,000 L of As-safe drinking water is US2.00, which means that SAR is a viable mitigation option for rural areas.

Optical coatings for high average power XeF lasers

NASA Astrophysics Data System (ADS)

Milam, D.; Thomas, I.; Wilder, J.; George, D.

1988-03-01

Porous silica, calcium and magnesium fluorides were investigated for potential use as antireflective coatings for XeF lasers. Excellent optical properties were obtained for all types, and laser damage thresholds were in the range 18 to 25 J/sq cm at 350 nm for 25 ns pulses at 25 Hz pulse repetition frequency. Studies of the effects of the XeF laser environment on these coatings were incomplete. Three oxides, ZrO2, HfO2, and Ta2O5 were investigated as the high index components to be paired with low index porous SiO2 for highly reflective dielectric coatings. Single oxide layers had indices in the 1.7 to 1.8 range and HfO2 coatings had the highest damage threshold at about 5 J/sq cm. An unexpected problem arose on attempts to prepare multilayer coatings. Stress in the coating after 6 to 8 layers had been put down, gave rise to crazing and peeling. This could not be avoided even on extending the curing process between coats.

Whole article corrigendum: "Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating" [Optics Communications 322 (2014) 66-72

NASA Astrophysics Data System (ADS)

Zhu, Jun; Zhang, Haosu; Zhu, Zhendong; Li, Qunqing; Jin, Guofan

2017-02-01

This article proposes a surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating. This structure contains a SiO2 film, an Ag film and a HfO2 film sequentially coated on the rectangularly-patterned p-GaN layer. The Ag film is used to enhance the internal quantum efficiency. The HfO2 cover-layer symmetrizes the distribution of refractive index besides the Ag film to improve the light extraction efficiency and surface-plasmon (SP) extraction efficiency. The inserted SiO2 layer is utilized to further improve the SP extraction efficiency. The properties of SP modes and Purcell effect in this structure are investigated. The photoluminescence experiments demonstrate that its peak intensity of top-emission is about 2.5 times greater than that from the reference structure covered by a single-layer Ag film on the rectangularly-patterned p-GaN layer.

Zircon Hf-O isotopic constraints on the origin of Late Mesozoic felsic volcanic rocks from the Great Xing'an Range, NE China

NASA Astrophysics Data System (ADS)

Gong, Mingyue; Tian, Wei; Fu, Bin; Wang, Shuangyue; Dong, Jinlong

2018-05-01

The voluminous Late Mesozoic magmatism was related to extensive re-melting of juvenile materials that were added to the Central East Asia continent in Phanerozoic time. The most favoured magma generation mechanism of Late Mesozoic magmas is partial melting of underplated lower crust that had radiogenic Hf-Nd isotopic characteristics, but this mechanism faces difficulties when interpreting other isotopic data. The tectonic environment controlling the generation of the Late Mesozoic felsic magmas is also in dispute. In this study, we obtained new U-Pb ages, and geochemical and isotopic data of representative Jurassic (154.4 ± 1.5 Ma) and Cretaceous (140.2 ± 1.5 Ma) felsic volcanic samples. The Jurassic sample has inherited zircon cores of Permian age, with depleted mantle-like εHf(t) of +7.4 - +8.5, which is in contrast with those of the magmatic zircons (εHf(t) = +2.4 ± 0.7). Whereas the inherited cores and the magmatic zircons have identical mantle-like δ18O composition ranges (4.25-5.29‰ and 4.69-5.54‰, respectively). These Hf-O isotopic characteristics suggest a mixed source of enriched mantle materials rather than ancient crustal components and a depleted mantle source represented by the inherited Permian zircon core. This mechanism is manifested by the eruption of Jurassic alkaline basalts originated from an enriched mantle source. The Cretaceous sample has high εHf(t) of +7.0 - +10.5, suggesting re-melting of a mafic magma derived from a depleted mantle-source. However, the sub-mantle zircon δ18O values (3.70-4.58‰) suggest the depleted mantle-derived mafic source rocks had experienced high temperature hydrothermal alteration at upper crustal level. Therefore, the Cretaceous felsic magma, if not all, could be generated by re-melting of down-dropped supracrustal volcanic rocks that experienced high temperature oxygen isotope alteration. The two processes, enriched mantle-contribution and supracrustal juvenile material re-melting, are new generation mechanisms of the Late Mesozoic magmas from Central East Asia. Rift settings may have controlled these processes throughout crustal and mantle levels.

Impaired brainstem and thalamic high-frequency oscillatory EEG activity in migraine between attacks.

PubMed

Porcaro, Camillo; Di Lorenzo, Giorgio; Seri, Stefano; Pierelli, Francesco; Tecchio, Franca; Coppola, Gianluca

2017-09-01

Introduction We investigated whether interictal thalamic dysfunction in migraine without aura (MO) patients is a primary determinant or the expression of its functional disconnection from proximal or distal areas along the somatosensory pathway. Methods Twenty MO patients and twenty healthy volunteers (HVs) underwent an electroencephalographic (EEG) recording during electrical stimulation of the median nerve at the wrist. We used the functional source separation algorithm to extract four functionally constrained nodes (brainstem, thalamus, primary sensory radial, and primary sensory motor tangential parietal sources) along the somatosensory pathway. Two digital filters (1-400 Hz and 450-750 Hz) were applied in order to extract low- (LFO) and high- frequency (HFO) oscillatory activity from the broadband signal. Results Compared to HVs, patients presented significantly lower brainstem (BS) and thalamic (Th) HFO activation bilaterally. No difference between the two cortical HFO as well as in LFO peak activations between the two groups was seen. The age of onset of the headache was positively correlated with HFO power in the right brainstem and thalamus. Conclusions This study provides evidence for complex dysfunction of brainstem and thalamocortical networks under the control of genetic factors that might act by modulating the severity of migraine phenotype.

Electrical Characteristics of WSi2 Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers

NASA Astrophysics Data System (ADS)

Lee, Hyo Jun; Lee, Dong Uk; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju

2011-06-01

Nanocrystal-floating gate capacitors with WSi2 nanocrystals and high-k tunnel layers were fabricated to improve the electrical properties such as retention, programming/erasing speed, and endurance. The WSi2 nanocrystals were distributed uniformly between the tunnel and control gate oxide layers. The electrical performance of the tunnel barrier with the SiO2/HfO2/Al2O3 (2/1/3 nm) (OHA) tunnel layer appeared to be better than that with the Al2O3/HfO2/Al2O3 (2/1/3 nm) (AHA) tunnel layer. When ΔVFB is about 1 V after applying voltage at ±8 V, the programming/erasing speeds of AHA and OHA tunnel layers are 300 ms and 500 µs, respectively. In particular, the device with WSi2 nanocrystals and the OHA tunnel barrier showed a large memory window of about 7.76 V when the voltage swept from 10 to -10 V, and it was maintained at about 2.77 V after 104 cycles.

AFM characterization of model nuclear fuel oxide multilayer structures modified by heavy ion beam irradiation

NASA Astrophysics Data System (ADS)

Hawley, M. E.; Devlin, D. J.; Reichhardt, C. J.; Sickafus, K. E.; Usov, I. O.; Valdez, J. A.; Wang, Y. Q.

2010-10-01

This work explored a potential new model dispersion fuel form consisting of an actinide material embedded in a radiation tolerant matrix that captures fission products (FPs) and is easily separated chemically as waste from the fuel material. To understand the stability of this proposed dispersion fuel form design, an idealized model system composed of a multilayer film was studied. This system consisted of a tri-layer structure of an MgO layer sandwiched between two HfO 2 layers. HfO 2 served as a surrogate fissile material for UO 2 while MgO represented a stable, fissile product (FP) getter that is easily separated from the fissile material. This type of multilayer film structure allowed us to control the size of and spacing between each layer. The films were grown at room temperature by e-beam deposition on a Si(1 1 1) substrate and post-annealed annealing at a range of temperatures to crystallize the HfO 2 layers. The 550 °C annealed sample was subsequently irradiated with 10 MeV Au 3+ ions at a range of fluences from 5 × 10 13 to 3.74 × 10 16 ions/cm 2. Separate single layer constituent films and the substrate were also irradiated at 5 × 10 15 and 8 × 10 14 and 2 × 10 16, respectively. After annealing and irradiation, the samples were characterized using atomic force imaging techniques to determine local changes in microstructure and mechanical properties. All samples annealed above 550 °C cracked. From the AFM results we observed both crack healing and significant modification of the surface at higher fluences.

Moessbauer study in thin films of FeSi2 and FeSe systems

NASA Technical Reports Server (NTRS)

Escue, W. J.; Aggarwal, K.; Mendiratta, R. G.

1978-01-01

Thin films of FeSi2 and FeSe were studied using Moessbauer spectroscopy information regarding dangling bond configuration and nature of crystal structure in thin films was derived. A significant influence of crystalline aluminum substrate on film structure was observed.

2,3,3,3-tetrafluoropropene No Longer Regulated as a Volatile Organic Compound

EPA Pesticide Factsheets

The Environmental Protection Agency has issued a final rule that identified 2,3,3,3-tetrafluoropropene (also known as HFO-1234yf) as a chemical compound that will no longer be regulated as a VOC under the Clean Air Act.

Materials Data on HfO2 (SG:137) by Materials Project

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kristin Persson

2017-04-09

Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

Atomic-layer-deposited Al2O3-HfO2-Al2O3 dielectrics for metal-insulator-metal capacitor applications

NASA Astrophysics Data System (ADS)

Ding, Shi-Jin; Zhu, Chunxiang; Li, Ming-Fu; Zhang, David Wei

2005-08-01

Atomic-layer-deposited Al2O3-HfO2-Al2O3 dielectrics have been investigated to replace conventional silicon oxide and nitride for radio frequency and analog metal-insulator-metal capacitors applications. In the case of 1-nm-Al2O3, sufficiently good electrical performances are achieved, including a high dielectric constant of ˜17, a small dissipation factor of 0.018 at 100kHz, an extremely low leakage current of 7.8×10-9A/cm2 at 1MV/cm and 125°C, perfect voltage coefficients of capacitance (74ppm/V2 and 10ppm/V). The quadratic voltage coefficient of capacitance decreases with the applied frequency due to the change of relaxation time with different carrier mobility in insulator, and correlates with the dielectric composition and thickness, which is of intrinsic property owing to electric field polarization. Furthermore, the conduction mechanism of the AHA dielectrics is also discussed, indicating the Schottky emission dominated at room temperature.

Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array.

PubMed

Zhou, Ya-Xiong; Li, Yi; Su, Yu-Ting; Wang, Zhuo-Rui; Shih, Ling-Yi; Chang, Ting-Chang; Chang, Kuan-Chang; Long, Shi-Bing; Sze, Simon M; Miao, Xiang-Shui

2017-05-25

Resistive random access memory (RRAM) based reconfigurable logic provides a temporal programmable dimension to realize Boolean logic functions and is regarded as a promising route to build non-von Neumann computing architecture. In this work, a reconfigurable operation method is proposed to perform nonvolatile sequential logic in a HfO 2 -based RRAM array. Eight kinds of Boolean logic functions can be implemented within the same hardware fabrics. During the logic computing processes, the RRAM devices in an array are flexibly configured in a bipolar or complementary structure. The validity was demonstrated by experimentally implemented NAND and XOR logic functions and a theoretically designed 1-bit full adder. With the trade-off between temporal and spatial computing complexity, our method makes better use of limited computing resources, thus provides an attractive scheme for the construction of logic-in-memory systems.

Formation of medical radioisotopes 111In, 117 m Sn, 124Sb, and 177Lu in photonuclear reactions

NASA Astrophysics Data System (ADS)

Danagulyan, A. S.; Hovhannisyan, G. H.; Bakhshiyan, T. M.; Avagyan, R. H.; Avetisyan, A. E.; Kerobyan, I. A.; Dallakyan, R. K.

2015-06-01

The possibility of the photonuclear production of radioisotopes 111In, 117 m Sn, 124Sb, and 177Lu is discussed. Reaction yields were measured by the gamma-activation method. The enriched tin isotopes 112, 118Sn and Te and HfO2 of natural isotopic composition were used as targets. The targets were irradiated at the linear electron accelerator of Alikhanian National Science Laboratory (Yerevan) at the energy of 40 MeV. The experimental results obtained in this way reveal that the yield and purity of radioisotopes 111In and 117 mSn are acceptable for their production via photonuclear reactions. Reactions proceeding on targets from Te and HfO2 of natural isotopic composition and leading to the formation of 124Sb and 177Lu have small yields and are hardly appropriate for the photoproduction of these radioisotopes even in the case of enriched targets.

Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods

NASA Astrophysics Data System (ADS)

Mishima, K.; Murakami, H.; Ohta, A.; Sahari, S. K.; Fujioka, T.; Higashi, S.; Miyazaki, S.

2013-03-01

Atomic layer deposition (ALD) and Layer-by-Layer deposition of Ta-oxide films on Ge(100) with using tris (tert-butoxy) (tert-butylimido) tantalum have been studied systematically. From the analysis of the chemical bonding features of the interface between TaOx and Ge(100) using x-ray photoelectron spectroscopy (XPS), Ge atom diffusion into the Ta oxide layer and resultant TaGexOy formation during deposition at temperatures higher than 200°C were confirmed. Also, we have demonstrated that nanometer-thick deposition of Tantalum oxide as an interfacial layer effectively suppresses the formation of GeOx in the HfO2 ALD on Ge. By the combination of TaOx pre-deposition on Ge(100) and subsequent ALD of HfO2, a capacitance equivalent thickness (CET) of 1.35 nm and relative dielectric constant of 23 were achieved.

Spatial Modeling of Iron Transformations Within Artificial Soil Aggregates

NASA Astrophysics Data System (ADS)

Kausch, M.; Meile, C.; Pallud, C.

2008-12-01

Structured soils exhibit significant variations in transport characteristics at the aggregate scale. Preferential flow occurs through macropores while predominantly diffusive exchange takes place in intra-aggregate micropores. Such environments characterized by mass transfer limitations are conducive to the formation of small-scale chemical gradients and promote strong spatial variation in processes controlling the fate of redox-sensitive elements such as Fe. In this study, we present a reactive transport model used to spatially resolve iron bioreductive processes occurring within a spherical aggregate at the interface between advective and diffusive domains. The model is derived from current conceptual models of iron(hydr)oxide (HFO) transformations and constrained by literature and experimental data. Data were obtained from flow-through experiments on artificial soil aggregates inoculated with Shewanella putrefaciens strain CN32, and include the temporal evolution of the bulk solution composition, as well as spatial information on the final solid phase distribution within aggregates. With all iron initially in the form of ferrihydrite, spatially heterogeneous formation of goethite/lepidocrocite, magnetite and siderite was observed during the course of the experiments. These transformations were reproduced by the model, which ascribes a central role to divalent iron as a driver of HFO transformations and master variable in the rate laws of the considered reaction network. The predicted dissolved iron breakthrough curves also match the experimental ones closely. Thus, the computed chemical concentration fields help identify factors governing the observed trends in the solid phase distribution patterns inside the aggregate. Building on a mechanistic description of transformation reactions, fluid flow and solute transport, the model was able to describe the observations and hence illustrates the importance of small-scale gradients and dynamics of bioreductive processes for assessing bulk iron cycling. As HFOs are ubiquitous in soils, such process-level understanding of aggregate-scale iron dynamics has broad implications for the prediction of the subsurface fate of nutrients and contaminants that interact strongly with HFO surfaces.

Characterization of Navajo Sandstone concretions: Mars comparison and criteria for distinguishing diagenetic origins

NASA Astrophysics Data System (ADS)

Potter, Sally L.; Chan, Marjorie A.; Petersen, Erich U.; Dyar, M. Darby; Sklute, Elizabeth

2011-01-01

The eolian Jurassic Navajo Sandstone spheroidal hydrous ferric oxide (HFO) concretions are divided into two size classes: macro-concretions of > 5 mm diameter and micro-concretions of < 5 mm diameter. Three internal structural end-members of macro-concretions are described as rind, layered, and solid. Two end-members of micro-concretions are rind and solid. Chemical and mineralogical gradients (μm- to mm-scale) are identified with QEMSCAN (Quantitative Elemental Mineralogy using a SCANning electron microscope) and visible to near infrared (VNIR) reflectance spectroscopy. Three HFO phases are identified using VNIR reflectance spectroscopy. An amorphous HFO phase is typically located in the rinds. Goethite is present along interior edges of rinds and throughout the interiors of layered and solid concretions. Hematite is present in the centers of rind concretions. A synthesis of petrographic, mineralogical and chemical analyses suggests that concretions grow pervasively (as opposed to radially expanding). Our model proposes that concretions precipitate initially as an amorphous HFO that sets the radius and retains some original porosity. Subsequent precipitation fills remaining pore space with younger mineral phases. Inward digitate cement crystal growth corroborates concretion growth from a set radius toward the centers. Internal structure is modified during late stage precipitation that diffuses reactants through semi-permeable rinds and overprints the interiors with younger cements. Physical characterization of textures and minerals provides diagnostic criteria for understanding how similar concretions ("blueberries") form in Meridiani Planum, Mars. The analogous Navajo Sandstone concretions show similar characteristics of in situ self-organized spacing, spheroidal geometries, internal structures, conjoined forms, and precursor HFO phases that dehydrate to goethite or hematite. These characteristics indicate a common origin via groundwater diagenesis.

High-laser-damage-threshold HfO2/SiO2 mirrors manufactured by sputtering process

NASA Astrophysics Data System (ADS)

Fornier, Anne; Bernardino, D.; Lam, Odile; Neauport, Jerome; Dufour, Francois; Schmitt, Bernard R.; Mackowski, Jean-Marie

1999-07-01

A major preoccupation for the design of the LMJ laser is the mirrors laser damage threshold. SAGEM SA, in collaboration with the CEA, has conducted a study in order to improve the laser induced damage threshold under operational conditions.

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

NASA Astrophysics Data System (ADS)

Chen, Ying-Chen; Lin, Chih-Yang; Huang, Hui-Chun; Kim, Sungjun; Fowler, Burt; Chang, Yao-Feng; Wu, Xiaohan; Xu, Gaobo; Chang, Ting-Chang; Lee, Jack C.

2018-02-01

Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfO x /SiO x -based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfO x /SiO x structure. The stacking HfO x /SiO x -based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ~1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO 2 films

NASA Astrophysics Data System (ADS)

Zhang, Yu; Xu, Jun; Zhou, Da-Yu; Wang, Hang-Hang; Lu, Wen-Qi; Choi, Chi-Kyu

2018-04-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 51272034 and 51672032) and the Fundamental Research Funds for the Central Universities, China (Grant No. DUT17ZD211).

Angular distribution of hybridization in sputtered carbon thin film

NASA Astrophysics Data System (ADS)

Liu, Y.; Wang, H.; Wei, Z. C.

2017-08-01

The sp3/sp2 ratio of sputtered carbon thin film depends on the ion bombardment process and tailors the physical properties of carbon thin film. In present work, we report the angular distribution of hybridization in magnetron sputtered carbon thin film for the first time. By x-ray photoelectron spectra analyses, it is found that the sp3/sp2 ratio increases linearly with increasing the deposition angle from 0 to 90 degree, which could be attributed to the enhancement of direct knocking-out of near-surface target atoms. In addition, we also derive the sp3/sp2 ratio by simulation on complex permittivity in terahertz frequency using a modified percolation approximation tunneling model. Those derived data consist with the results from x-ray photoelectron spectroscopy.

Effects-driven chemical fractionation of heavy fuel oil to isolate compounds toxic to trout embryos.

PubMed

Bornstein, Jason M; Adams, Julie; Hollebone, Bruce; King, Thomas; Hodson, Peter V; Brown, R Stephen

2014-04-01

Heavy fuel oil (HFO) spills account for approximately 60% of ship-source oil spills and are up to 50 times more toxic than medium and light crude oils. Heavy fuel oils contain elevated concentrations of polycyclic aromatic hydrocarbons (PAHs) and alkyl-PAHs, known to be toxic to fish; however, little direct characterization of HFO toxicity has been reported. An effects-driven chemical fractionation was conducted on HFO 7102 to separate compounds with similar chemical and physical properties, including toxicity, to isolate the groups of compounds most toxic to trout embryos. After each separation, toxicity tests directed the next phase of fractionation, and gas chromatography-mass spectrometry analysis correlated composition with toxicity, with a focus on PAHs. Low-temperature vacuum distillation permitted the separation of HFO into 3 fractions based on boiling point ranges. The most toxic of these fractions underwent wax precipitation to remove long-chain n-alkanes. The remaining PAH-rich extract was further separated using open column chromatography, which provided distinct fractions that were grouped according to increasing aromatic ring count. The most toxic of these fractions was richest in PAHs and alkyl-PAHs. The results of the present study were consistent with previous crude oil studies that identified PAH-rich fractions as the most toxic. © 2013 SETAC.

Real-time atomistic observation of structural phase transformations in individual hafnia nanorods

DOE PAGES

Hudak, Bethany M.; Depner, Sean W.; Waetzig, Gregory R.; ...

2017-05-12

High-temperature phases of hafnium dioxide have exceptionally high dielectric constants and large bandgaps, but quenching them to room temperature remains a challenge. Scaling the bulk form to nanocrystals, while successful in stabilizing the tetragonal phase of isomorphous ZrO 2, has produced nanorods with a twinned version of the room temperature monoclinic phase in HfO 2. Here we use in situ heating in a scanning transmission electron microscope to observe the transformation of an HfO 2 nanorod from monoclinic to tetragonal, with a transformation temperature suppressed by over 1000°C from bulk. When the nanorod is annealed, we observe with atomic-scale resolutionmore » the transformation from twinned-monoclinic to tetragonal, starting at a twin boundary and propagating via coherent transformation dislocation; the nanorod is reduced to hafnium on cooling. Unlike the bulk displacive transition, nanoscale size-confinement enables us to manipulate the transformation mechanism, and we observe discrete nucleation events and sigmoidal nucleation and growth kinetics.« less

The Development of HfO2-Rare Earth Based Oxide Materials and Barrier Coatings for Thermal Protection Systems

NASA Technical Reports Server (NTRS)

Zhu, Dongming; Harder, Bryan James

2014-01-01

Advanced hafnia-rare earth oxides, rare earth aluminates and silicates have been developed for thermal environmental barrier systems for aerospace propulsion engine and thermal protection applications. The high temperature stability, low thermal conductivity, excellent oxidation resistance and mechanical properties of these oxide material systems make them attractive and potentially viable for thermal protection systems. This paper will focus on the development of the high performance and high temperature capable ZrO2HfO2-rare earth based alloy and compound oxide materials, processed as protective coating systems using state-or-the-art processing techniques. The emphasis has been in particular placed on assessing their temperature capability, stability and suitability for advanced space vehicle entry thermal protection systems. Fundamental thermophysical and thermomechanical properties of the material systems have been investigated at high temperatures. Laser high-heat-flux testing has also been developed to validate the material systems, and demonstrating durability under space entry high heat flux conditions.

Effect of substituents in benzoxazole derivatives of biphenyl on the optical properties and photostability of their thin films

NASA Astrophysics Data System (ADS)

Chaplanova, Zh. D.; Mikhailovskii, Yu. K.; Agabekov, V. E.; Ol'Khovik, V. K.; Vasilevskii, D. A.; Galinovskii, N. A.; Zhavnerko, G. K.

2009-07-01

We have studied the characteristic features of the luminescence of thin films, formed by deposition from solutions and thermal vacuum deposition (TVD), of 4,4'-bis[(E)-1-(1,3-benzoxazol-2-yl)-2-ethenyl]-2-fluorobiphenyl (BPh-1) and 4,4'-bis[(E)-1-(1,3-benzoxazol-2-yl)-2-ethenyl]-2,2'-difluorobiphenyl (BPh-2). We have established that fluorine atoms in the biphenyl moiety of the benzoxasole derivatives significantly improve the stability of the TVD films relative to oxidative aging compared with hexyloxy substituents. Irradiation with UV light stimulates quenching of luminescence and structuring of the TVD film of the difluoro-substituted derivative.

Diel changes in metal concentrations in a geogenically acidic river: Rio Agrio, Argentina

NASA Astrophysics Data System (ADS)

Parker, Stephen R.; Gammons, Christopher H.; Pedrozo, Fernando L.; Wood, Scott A.

2008-12-01

Rio Agrio in Patagonia, Argentina is a geogenically acidic stream that derives its low-pH waters from condensation of acidic gases near its headwaters on the flanks of the active Copahue Volcano. This study reports the results of three diel (24-h) water samplings in three different pH regimes (3.2, 4.4 and 6.3) along the river. Changes in the concentration and speciation of Fe dominated the diel chemical changes at all three sites, although the timing and intensity of these cycles were different in each reach. At the two acidic sampling sites, total dissolved Fe and dissolved Fe(III) concentrations decreased during the day and increased at night, whereas dissolved Fe(II) showed the reverse pattern. These cycles are explained by Fe(III) photoreduction, as well as enhanced rates of precipitation of hydrous ferric oxide (HFO) during the warm afternoon hours. A strong correlation was observed between Fe(III) and As at the furthest upstream (pH 3.2) site, most likely due to co-precipitation of As with HFO. At the downstream (pH 6.3) location, Fe(II) concentrations increased at night, as did concentrations of rare earth elements and dissolved Al. Photoreduction does not appear to be an important process at pH 6.3, although it may be indirectly responsible for the observed diel cycle of Fe(II) due to advection of photochemically produced Fe(II) from acidic upstream waters. The results of this study of a naturally-acidic river are very similar to diel trends recently obtained from mining-impacted streams receiving acid rock drainage. The results are also used to explore the link between geochemistry and microbiology in acidic eco-systems. For example, Fe(III) photoreduction produces chemical potential energy (in the form of metastable Fe 2+) that helps support the bacterial community in this unique extreme environment.

Electric-field-controlled interface dipole modulation for Si-based memory devices.

PubMed

Miyata, Noriyuki

2018-05-31

Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

U.S. High Seas Marine Text Forecasts by Area

Science.gov Websites

Flooding Tsunamis 406 EPIRB's U.S. High Seas Marine Text Forecasts by Area OPC N.Atlantic High Seas Forecast NHC N.Atlantic High Seas Forecast OPC N.Pacific High Seas Forecast HFO N.Pacific High Seas Forecast NHC N.Pacific High Seas Forecast HFO S.Pacific High Seas Forecast U.S. High Seas Marine Text

The formation, structure, and ageing of As-rich hydrous ferric oxide at the abandoned Sb deposit Pezinok (Slovakia)

NASA Astrophysics Data System (ADS)

Majzlan, Juraj; Lalinská, Bronislava; Chovan, Martin; Jurkovič, L.'ubomír; Milovská, Stanislava; Göttlicher, Jörg

2007-09-01

The abandoned Sb deposit Pezinok in Slovakia is a significant source of As and Sb pollution that can be traced in the upper horizons of soils kilometers downstream. The source of the metalloids are two tailing impoundments which hold ˜380,000 m 3 of mining waste. The tailings and the discharged water have circumneutral pH values (7.0 ± 0.6) because the acidity generated by the decomposition of the primary sulfides (pyrite, FeS 2; arsenopyrite, FeAsS; berthierite, FeSb 2S 4) is rapidly neutralized by the abundant carbonates. The weathering rims on the primary sulfides are iron oxides which act as very efficient scavengers of As and Sb (with up to 19.2 wt% As and 23.7 wt% Sb). In-situ μ-XANES experiments indicate that As in the weathering rims is fully oxidized (As 5+). The pore solutions in the impoundment body contain up to 81 ppm As and 2.5 ppm Sb. Once these solutions are discharged from the impoundments, they precipitate or deposit masses of As-rich hydrous ferric oxide (As-HFO) with up to 28.3 wt% As 2O 5 and 2.7 wt% Sb. All As-HFO samples are amorphous to X-rays. They contain Fe and As in their highest oxidation state and in octahedral and tetrahedral coordination, respectively, as suggested by XANES and EXAFS studies on Fe K and As K edges. The iron octahedra in the As-HFO share edges to form short single chains and the chains polymerize by sharing edges or corners with the adjacent units. The arsenate ions attach to the chains in a bidentate-binuclear and monodentate fashion. In addition, hydrogen-bonded complexes may exist to satisfy the bonding requirements of all oxygen atoms in the first coordination sphere of As 5+. Structural changes in the As-HFO samples were traced by chemical analyses and Fe EXAFS spectroscopy during an ageing experiment. As the samples age, As becomes more easily leachable. EXAFS spectra show a discernible trend of increasing number of Fe-Fe pairs at a distance of 3.3-3.5 Å, that is, increasing polymerization of the iron octahedra to form larger units with fewer adsorption sites. Therefore, although ferrihydrite is an excellent material for capturing arsenic, its use as a medium for a long-term storage of As has to be considered with a great caution because it will tend to release arsenic as it ages.

Colloid-facilitated metal transport in peat filters.

PubMed

Kalmykova, Yuliya; Rauch, Sebastien; Strömvall, Ann-Margret; Morrison, Greg; Stolpe, Björn; Hasselliöv, Martin

2010-06-01

The effect of colloids on metal retention in peat columns was studied, with the focus on colloids from two sources-organic matter leached from peat, and introduced organic and hydrous ferric oxide (HFO) colloids. A significant fraction of metals was found to be associated with peat-produced organic colloids; however the concentrations of organic colloids leached are low (trace concentrations) and temporal and have a limited effect on the efficiency of peat filters. In contrast, the presence of organic and HFO colloids in the input water causes a significant decrease in the performance of peat filters. Organic colloids were identified as the main vector of cadmium, copper, nickel, and zinc, while lead is transported by both organic and HFO colloids. The colloidal distribution of metals obtained in this study has important implications for the mobility of trace metals in porous media. The occurrence of colloids in the input waters and their characteristics must be considered when designing water treatment facilities.

High-temperature behavior of oxide dispersion strengthening CoNiCrAlY

DOE Office of Scientific and Technical Information (OSTI.GOV)

Unocic, Kinga A.; Bergholz, Jan; Huang, T

2017-11-01

To fabricate oxide dispersion strengthened bond coatings, commercial Co–30wt-%Ni–20Cr–8Al–0•4Y powder was milled with 2% additions of Al2O3, Y2O3 or Y2O3 + HfO2. Low-pressure plasma sprayed, free-standing specimens were oxidised in air + 10%H2O at 1100 °C both isothermally (100 h) and in 500, 1-h cycles. Dry air cyclic testing conducted at both ORNL and FZJ showed remarkably similar results. In general, the water vapour addition caused more scale spallation. Two LPPS specimens without oxide additions were tested for comparison. The specimens with 2%Al2O3 addition exhibited the best behaviour as the powder already contained 0•4%Y. Additions of 2%Y2O3 and especially 1%Y2O3more » + 1%HfO2 resulted in over-doping as evidenced by high mass gains and the formation of Y- and Hf-rich pegs. Scanning transmission electron microscopy of the isothermal specimens showed no Hf and/or Y segregation to the alumina scale grain boundaries in the over-doped specimens.« less

Glass-water interactions: Effect of high-valence cations on glass structure and chemical durability

DOE PAGES

Pierce, Eric M.; Kerisit, Sebastien N.; Charpentier, Thibault; ...

2016-02-27

Spectroscopic measurements, dissolution experiments, and Monte Carlo simulations were performed to investigate the effect of high valence cations (HVC) on the mechanisms of glass dissolution under dilute and near-saturated conditions. Raman and NMR spectroscopy were used to determine the structural changes that occur in glass, specifically network formers (e.g., Al, Si, and B), with the addition of the HVC element hafnium in the Na 2O Al 2O 3 B 2O 3 HfO 2 SiO 2 system (e.g., Na/(Al+B) = 1.0 and HfO 2/SiO 2 from 0.0 to 0.42). Spectroscopic measurements revealed that increasing hafnium content decreases N 4 and increasesmore » the amount of Si–O–Hf moieties in the glass. Results from flow through experiments conducted under dilute and near saturated conditions show a decrease of approximately 100 or more in the dissolution rate over the series from 0 to 20 mol% HfO 2. Comparing the average steady-state rates obtained under dilute conditions to the rates obtained for near-saturated conditions reveal a divergence in the magnitude between the average steady state rates measured in these different conditions. The reason for this divergence was investigated more thoroughly using Monte Carlo simulations. Simulations indicate that the divergence in glass dissolution behavior under dilute and near-saturated conditions result from the formation of a low coordination Si sites when Si from the saturated solution adsorbs to Hf on the glass surface. The residence time of the newly formed low coordination Si sites is longer at the glass surface and increases the density of anchor sites from which altered layers with higher Si densities can form than in the absence of Hf. These results illustrate the importance of understanding solid water/solid-fluid interactions by linking macroscopic reaction kinetics to nanometer scale interfacial processes.« less

Low operation voltage and high thermal stability of a WSi2 nanocrystal memory device using an Al2O3/HfO2/Al2O3 tunnel layer

NASA Astrophysics Data System (ADS)

Uk Lee, Dong; Jun Lee, Hyo; Kyu Kim, Eun; You, Hee-Wook; Cho, Won-Ju

2012-02-01

A WSi2 nanocrystal nonvolatile memory device was fabricated with an Al2O3/HfO2/Al2O3 (AHA) tunnel layer and its electrical characteristics were evaluated at 25, 50, 70, 100, and 125 °C. The program/erase (P/E) speed at 125 °C was approximately 500 μs under threshold voltage shifts of 1 V during voltage sweeping of 8 V/-8 V. When the applied pulse voltage was ±9 V for 1 s for the P/E conditions, the memory window at 125 °C was approximately 1.25 V after 105 s. The activation energies for the charge losses of 5%, 10%, 15%, 20%, 25%, 30%, and 35% were approximately 0.05, 0.11, 0.17, 0.21, 0.23, 0.23, and 0.23 eV, respectively. The charge loss mechanisms were direct tunneling and Pool-Frenkel emission between the WSi2 nanocrystals and the AHA barrier engineered tunneling layer. The WSi2 nanocrystal memory device with multi-stacked high-K tunnel layers showed strong potential for applications in nonvolatile memory devices.

Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function

NASA Astrophysics Data System (ADS)

Dey, Sandwip K.; Goswami, Jaydeb; Gu, Diefeng; de Waard, Henk; Marcus, Steve; Werkhoven, Chris

2004-03-01

Ruthenium electrodes were selectively deposited on photoresist-patterned HfO2 surface [deposited on a SiOx/Si wafer by atomic layer deposition (ALD)] by a manufacturable, digital chemical vapor deposition (DCVD) technique. DCVD of Ru was carried out at 280-320 °C using an alternate delivery of Bis (2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru (dissolved in tetrahydrofuran) and oxygen. The as-deposited Ru films were polycrystalline, dense, and conducting (resistivity ˜20.6 μΩ cm). However, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and high-resolution electron microscopy results indicate the presence of an amorphous RuOx at the Ru grain boundaries and at the DCVD-Ru/ALD-HfO2 interface. The estimated work function of DCVD-Ru on ALD-HfO2 was ˜5.1 eV. Moreover, the equivalent oxide thickness, hysteresis in capacitance-voltage, and leakage current density at -2 V of the HfO2/SiOx dielectric, after forming gas (95% N2+5% H2) annealing at 450 °C for 30 min, were 1.4 nm, 20 mV, and 7.4×10-7 A cm-2, respectively.

Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

NASA Astrophysics Data System (ADS)

Panda, D. K.; Lenka, T. R.

2017-12-01

In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is investigated for different gate insulators such as SiO2, Al2O3/Ga2O3/GdO3, HfO2/SiO2, La2O3/SiO2 and HfO2 with different trap densities by IFM based TCAD simulation. In order to analyze this an analytical model of drain current low frequency noise is developed. The model is developed by considering 2DEG carrier fluctuations, mobility fluctuations and the effects of 2DEG charge carrier fluctuations on the mobility. In the study of different gate insulators it is observed that carrier fluctuation is the dominant low frequency noise source and the non-uniform exponential distribution is critical to explain LFN behavior, so the analytical model is developed by considering uniform distribution of trap density. The model is validated with available experimental data from literature. The effect of total number of traps and gate length scaling on this low frequency noise due to different gate dielectrics is also investigated.

Petrogenesis of the late Early Cretaceous granodiorite - Quartz diorite from eastern Guangdong, SE China: Implications for tectono-magmatic evolution and porphyry Cu-Au-Mo mineralization

NASA Astrophysics Data System (ADS)

Jia, Lihui; Mao, Jingwen; Liu, Peng; Li, Yang

2018-04-01

Comprehensive petrological, zircon U-Pb dating, Hf-O isotopes, whole rock geochemistry and Sr-Nd isotopes data are presented for the Xinwei and Sanrao intrusions in the eastern Guangdong Province, Southeast (SE) China, with an aim to constrain the petrogenesis, tectono-magmatic evolution and evaluate the implication for porphyry Cu-Au-Mo mineralization. The Xinwei intrusion is composed of granodiorite and quartz diorite, whilst the Sanrao intrusion consists of granodiorite. Zircon U-Pb ages show that both intrusions were emplaced at ca. 106-102 Ma. All rocks are metaluminous to weakly peraluminous, high-K calc-alkaline in composition, and they are characterized by LREEs enrichment, depletion in Nb, Ta, P, and Ti, and strongly fractionated LREEs to HREEs. The initial 87Sr/86Sr ratios range from 0.7055 to 0.7059, and εNd(t) values range from -3.9 to -3.0. Together with the relatively high εHf(t) values (-3.2 to 3.3) and low δ18O values (4.9‰ to 6.6‰), these data suggest that the Xinwei and Sanrao intrusions were derived from a mixed source: including the mantle-derived mafic magmas and lower continental crustal magmas. Fractional crystallization played an important role in the magmatic evolution of the Xinwei and Sanrao intrusions. The elemental and isotopic compositions of the Xinwei and Sanrao intrusions, as well as the high water content and oxidation state of their parental magmas, are similar to those of the ore-bearing granodiorites of the Luoboling porphyry Cu-Mo deposit in the Fujian Province, neighbouring east to the Guangdong Province, indicating that the late Early Cretaceous granodioritic intrusions in the eastern Guangdong Province may also have Cu-Au-Mo mineralization potential. The late Early Cretaceous magmatic event is firstly reported in eastern Guangdong, and represents a positive response of large-scale lithosphere extension and thinning, triggered by the changing subduction direction of the Paleo-Pacific plate from oblique subduction to parallel to the continental margin during the Early Cretaceous.

Aerosol emissions of a ship diesel engine operated with diesel fuel or heavy fuel oil.

PubMed

Streibel, Thorsten; Schnelle-Kreis, Jürgen; Czech, Hendryk; Harndorf, Horst; Jakobi, Gert; Jokiniemi, Jorma; Karg, Erwin; Lintelmann, Jutta; Matuschek, Georg; Michalke, Bernhard; Müller, Laarnie; Orasche, Jürgen; Passig, Johannes; Radischat, Christian; Rabe, Rom; Reda, Ahmed; Rüger, Christopher; Schwemer, Theo; Sippula, Olli; Stengel, Benjamin; Sklorz, Martin; Torvela, Tiina; Weggler, Benedikt; Zimmermann, Ralf

2017-04-01

Gaseous and particulate emissions from a ship diesel research engine were elaborately analysed by a large assembly of measurement techniques. Applied methods comprised of offline and online approaches, yielding averaged chemical and physical data as well as time-resolved trends of combustion by-products. The engine was driven by two different fuels, a commonly used heavy fuel oil (HFO) and a standardised diesel fuel (DF). It was operated in a standardised cycle with a duration of 2 h. Chemical characterisation of organic species and elements revealed higher concentrations as well as a larger number of detected compounds for HFO operation for both gas phase and particulate matter. A noteworthy exception was the concentration of elemental carbon, which was higher in DF exhaust aerosol. This may prove crucial for the assessment and interpretation of biological response and impact via the exposure of human lung cell cultures, which was carried out in parallel to this study. Offline and online data hinted at the fact that most organic species in the aerosol are transferred from the fuel as unburned material. This is especially distinctive at low power operation of HFO, where low volatility structures are converted to the particulate phase. The results of this study give rise to the conclusion that a mere switching to sulphur-free fuel is not sufficient as remediation measure to reduce health and environmental effects of ship emissions.

Investigation of Hafnium oxide/Copper resistive memory for advanced encryption applications

NASA Astrophysics Data System (ADS)

Briggs, Benjamin D.

The Advanced Encryption Standard (AES) is a widely used encryption algorithm to protect data and communications in today's digital age. Modern AES CMOS implementations require large amounts of dedicated logic and must be tuned for either performance or power consumption. A high throughput, low power, and low die area AES implementation is required in the growing mobile sector. An emerging non-volatile memory device known as resistive memory (ReRAM) is a simple metal-insulator-metal capacitor device structure with the ability to switch between two stable resistance states. Currently, ReRAM is targeted as a non-volatile memory replacement technology to eventually replace flash. Its advantages over flash include ease of fabrication, speed, and lower power consumption. In addition to memory, ReRAM can also be used in advanced logic implementations given its purely resistive behavior. The combination of a new non-volatile memory element ReRAM along with high performance, low power CMOS opens new avenues for logic implementations. This dissertation will cover the design and process implementation of a ReRAM-CMOS hybrid circuit, built using IBM's 10LPe process, for the improvement of hardware AES implementations. Further the device characteristics of ReRAM, specifically the HfO2/Cu memory system, and mechanisms for operation are not fully correlated. Of particular interest to this work is the role of material properties such as the stoichiometry, crystallinity, and doping of the HfO2 layer and their effect on the switching characteristics of resistive memory. Material properties were varied by a combination of atomic layer deposition and reactive sputtering of the HfO2 layer. Several studies will be discussed on how the above mentioned material properties influence switching parameters, and change the underlying physics of device operation.

Effect of Charging Electron Exposure on 1064nm Transmission Through Bare Sapphire Optics and SiO2 over HfO2 AR-Coated Sapphire Optics

NASA Technical Reports Server (NTRS)

Ottens, Brian P.; Connelly, Joseph; Brown, Stephen; Roeder, James; Kauder, Lonny; Cavanaugh, John

2010-01-01

Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.

Effect of Charging Electron Exposure on 1064nm Transmission through Bare Sapphire Optics and SiO2 over HfO2 AR-coated Sapphire Optics

NASA Technical Reports Server (NTRS)

Ottens, Brian P.; Connelly, Joseph; Brown, Stephen; Roeder, james; Kauder, Lonny; Cavanaugh, John

2008-01-01

Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.

Formation of Green Rust and Immobilization of Nickel in Response to Bacterial Reduction of Hydrous Ferric Oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parmar, N.; Gorby, Yuri A.; Beveridge, Terrance J.

This investigation documents the formation of Green Rust (GR) and immobilization of Ni2+ in response to bacterial reduction of hydrous ferric oxide (HFO) reduction experiments provided evidence that the solid-phase partitioning of Ni2+ in GR extended from equilibrium solid-solution behavior.

Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides.

PubMed

Zeng, Qingfeng; Oganov, Artem R; Lyakhov, Andriy O; Xie, Congwei; Zhang, Xiaodong; Zhang, Jin; Zhu, Qiang; Wei, Bingqing; Grigorenko, Ilya; Zhang, Litong; Cheng, Laifei

2014-02-01

High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with first-principles calculations and the global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2 and HfO2, some of which correspond to known phases and some of which are new. The results allow us to propose characteristics (genes) common to high-fitness structures--these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2-SiO2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue for discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery.

Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements

NASA Astrophysics Data System (ADS)

Manikanthababu, N.; Vajandar, S.; Arun, N.; Pathak, A. P.; Asokan, K.; Osipowicz, T.; Basu, T.; Nageswara Rao, S. V. S.

2018-03-01

In-situ I-V and C-V characterization studies were carried out to determine the device quality of atomic layer deposited HfO2 (2.7 nm)/SiO2 (0.6 nm)/Si-based metal oxide semiconductor devices during 120 MeV Ag ion irradiation. The influence of various tunneling mechanisms has been investigated by analyzing the I-V characteristics as a function of ion fluence. The nature of the defects created is tentatively identified by the determination of the significant tunneling processes. While the ion induced annealing of defects is observed at lower fluences, ion induced intermixing and radiation damage is found to be significant at higher fluences. The C-V characteristics also reveal significant changes at the interface and oxide trap densities: an increase in the oxide layer thickness occurs through the formation of an HfSiO interlayer. The interlayer is due to the swift heavy ion induced intermixing, which has been confirmed by X-TEM and X-ray photoelectron spectroscopy measurements.

Mapping the Coulomb Environment in Interference-Quenched Ballistic Nanowires.

PubMed

Gutstein, D; Lynall, D; Nair, S V; Savelyev, I; Blumin, M; Ercolani, D; Ruda, H E

2018-01-10

The conductance of semiconductor nanowires is strongly dependent on their electrostatic history because of the overwhelming influence of charged surface and interface states on electron confinement and scattering. We show that InAs nanowire field-effect transistor devices can be conditioned to suppress resonances that obscure quantized conduction thereby revealing as many as six sub-bands in the conductance spectra as the Fermi-level is swept across the sub-band energies. The energy level spectra extracted from conductance, coupled with detailed modeling shows the significance of the interface state charge distribution revealing the Coulomb landscape of the nanowire device. Inclusion of self-consistent Coulomb potentials, the measured geometrical shape of the nanowire, the gate geometry and nonparabolicity of the conduction band provide a quantitative and accurate description of the confinement potential and resulting energy level structure. Surfaces of the nanowire terminated by HfO 2 are shown to have their interface donor density reduced by a factor of 30 signifying the passivating role played by HfO 2 .

Characteristics of nanocomposites and semiconductor heterostructure wafers using THz spectroscopy

NASA Astrophysics Data System (ADS)

Altan, Hakan

All optical, THz-Time Domain Spectroscopic (THz-TDS) methods were employed towards determining the electrical characteristics of Single Walled Carbon Nanotubes, Ion Implanted Si nanoclusters and Si1-xGe x, HFO2, SiO2 on p-type Si wafers. For the nanoscale composite materials, Visible Pump/THz Probe spectroscopy measurements were performed after observing that the samples were not sensitive to the THz radiation alone. The results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photo-induced localized states from 0.2 to 0.7THz. The THz transmission is modeled through the photoexcited layer with an effective dielectric constant described by a Drude + Lorentz model and given by Maxwell-Garnett theory. Comparisons are made with other prevalent theories that describe electronic transport. Similar experiments were repeated for ion-implanted, 3-4nm Si nanoclusters in fused silica for which a similar behavior was observed. In addition, a change in reflection from Si1-xGex on Si, 200mm diameter semiconductor heterostructure wafers with 10% or 15% Ge content, was measured using THz-TDS methods. Drude model is utilized for the transmission/reflection measurements and from the reflection data the mobility of each wafer is estimated. Furthermore, the effect of high-kappa dielectric material (HfO2) on the electrical properties of p-type silicon wafers was characterized by utilizing non-contact, differential (pump-pump off) spectroscopic methods to differ between HfO2 and SiO 2 on Si wafers. The measurements are analyzed in two distinct transmission models, where one is an exact representation of the layered structure for each wafer and the other assumed that the response observed from the differential THz transmission was solely due to effects from interfacial traps between the dielectric layer and the substrate. The latter gave a more accurate picture of the carrier dynamics. From these measurements the effect of interfacial defects on transmission and mobility are quantitatively discussed.

Ages and petrogenesis of Jurassic and Cretaceous intrusive rocks in the Matsu Islands: Implications for lower crust modification beneath southeastern China

NASA Astrophysics Data System (ADS)

Chen, Jing-Yuan; Yang, Jin-Hui; Ji, Wei-Qiang

2017-12-01

Major and trace element, whole-rock Sr-, Nd- and Hf-isotope, zircon U-Pb age and Hf-O isotope data are reported for the intrusive rocks from the Matsu Islands in the coastal area of southeastern (SE) China, in order to study the ages, sources and petrogenesis of these rocks and evolution of the lower crust. The rocks include gneissic granite, massive granite, brecciated granite and diabase. Secondary ion mass spectrometer (SIMS) zircon U-Pb dating reveals that the rocks in the Matsu Islands were emplaced at ∼160 Ma, ∼130 Ma and ∼94 Ma. The Jurassic granites (∼160 Ma) have high SiO2 (74.1-74.5 wt%) and K2O + Na2O (8.32-8.33 wt%) contents and high Rb/Sr ratios of 0.6-1.2 and (La/Yb)CN ratios of 12.6-19.4. Their relatively high initial 87Sr/86Sr ratios (0.7074-0.7101), variable and negative εNd(t) values (-9.2 to -5.4), and variable zircon εHf(t) (-17.0 to +5.2) and δ18O (4.7-8.1‰) values indicate they were mainly derived from an ancient lower crustal source, but with involvement of high εHf(t) and low δ18O materials. The Early Cretaceous diabase (∼130 Ma) has SiO2 content of 56.5 wt%, relatively high MgO concentration, low initial 87Sr/86Sr ratio and negative εNd(t) value, similar to geochemical features of other Cretaceous mafic rocks in the coastal area of SE China. Zircons from the diabase have high εHf(t) values (-5.5 to +0.2) and relatively low δ18O values of 4.2-5.0‰. These characteristics indicate that the parental magma of the diabase was generated by partial melting of enriched lithospheric mantle, which have been metasomatised by altered oceanic crust-derived low-δ18O fluids. For the Cretaceous granitoids (∼130 Ma and 94 Ma), they have relatively low SiO2 (68.0-71.3 wt%) and K2O + Na2O (5.30-7.55 wt%) contents and low Rb/Sr ratios and (La/Yb)CN ratios of 5.8-7.1. They have low initial 87Sr/86Sr ratios (0.7071-0.7082), homogeneous εNd(t) (-4.3 to -4.5) and relatively high zircon εHf(t) values (-3.7 to +1.2) and low δ18O values (4.6-5.9‰). Their isotopic compositions are similar to those of the diabases in this study as well as other Cretaceous mafic rocks in the coastal area of SE China, suggesting that the sources of the Cretaceous granitoids might be the newly formed lower crust related to the underplated mafic rocks. Whole-rock geochemical, Sr-Nd and zircon Hf-O isotopic compositions indicate that the Jurassic granitoids are most likely generated by partial melting of relatively ancient basement rocks, whereas the Cretaceous granitoids were generated by partial melting of relatively young lower crustal rocks with addition of mantle-derived magma. This distinction implies that the pre-existing ancient lower crust beneath the coastal area of SE China has been modified by large-scale mafic magma underplating. Therefore, underplating of mantle-derived mafic magma would result in modification of the pre-existing ancient lower crust and formation of the relatively juvenile lower crust.

Metabolic Profiling as Well as Stable Isotope Assisted Metabolic and Proteomic Analysis of RAW 264.7 Macrophages Exposed to Ship Engine Aerosol Emissions: Different Effects of Heavy Fuel Oil and Refined Diesel Fuel

PubMed Central

Sapcariu, Sean C.; Kanashova, Tamara; Dilger, Marco; Diabaté, Silvia; Oeder, Sebastian; Passig, Johannes; Radischat, Christian; Buters, Jeroen; Sippula, Olli; Streibel, Thorsten; Paur, Hanns-Rudolf; Schlager, Christoph; Mülhopt, Sonja; Stengel, Benjamin; Rabe, Rom; Harndorf, Horst; Krebs, Tobias; Karg, Erwin; Gröger, Thomas; Weiss, Carsten; Dittmar, Gunnar; Hiller, Karsten; Zimmermann, Ralf

2016-01-01

Exposure to air pollution resulting from fossil fuel combustion has been linked to multiple short-term and long term health effects. In a previous study, exposure of lung epithelial cells to engine exhaust from heavy fuel oil (HFO) and diesel fuel (DF), two of the main fuels used in marine engines, led to an increased regulation of several pathways associated with adverse cellular effects, including pro-inflammatory pathways. In addition, DF exhaust exposure was shown to have a wider response on multiple cellular regulatory levels compared to HFO emissions, suggesting a potentially higher toxicity of DF emissions over HFO. In order to further understand these effects, as well as to validate these findings in another cell line, we investigated macrophages under the same conditions as a more inflammation-relevant model. An air-liquid interface aerosol exposure system was used to provide a more biologically relevant exposure system compared to submerged experiments, with cells exposed to either the complete aerosol (particle and gas phase), or the gas phase only (with particles filtered out). Data from cytotoxicity assays were integrated with metabolomics and proteomics analyses, including stable isotope-assisted metabolomics, in order to uncover pathways affected by combustion aerosol exposure in macrophages. Through this approach, we determined differing phenotypic effects associated with the different components of aerosol. The particle phase of diluted combustion aerosols was found to induce increased cell death in macrophages, while the gas phase was found more to affect the metabolic profile. In particular, a higher cytotoxicity of DF aerosol emission was observed in relation to the HFO aerosol. Furthermore, macrophage exposure to the gas phase of HFO leads to an induction of a pro-inflammatory metabolic and proteomic phenotype. These results validate the effects found in lung epithelial cells, confirming the role of inflammation and cellular stress in the response to combustion aerosols. PMID:27348622

Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

NASA Astrophysics Data System (ADS)

Consiglio, Steven P.

To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of the properties of conductive HfN grown via plasma-assisted atomic layer deposition (PA-ALD) using tetrakis(ethylmethylamido)hafnium on a modified commercially available wafer processing tool. Key properties of these materials for use as gate stack replacement materials are addressed and future directions for further characterization and novel material investigations are proposed.

Field effect transistor with HfO2/Parylene-C bilayer hybrid gate insulator

NASA Astrophysics Data System (ADS)

Kumar, Neeraj; Kito, Ai; Inoue, Isao

2015-03-01

We have investigated the electric field control of the carrier density and the mobility at the surface of SrTiO3, a well known transition-metal oxide, in a field effect transistor (FET) geometry. We have used a Parylene-C (8 nm)/HfO2 (20 nm) double-layer gate insulator (GI), which can be a potential candidate for a solid state GI for the future Mott FETs. So far, only examples of the Mott FET used liquid electrolyte or ferroelectric oxides for the GI. However, possible electrochemical reaction at the interface causes damage to the surface of the Mott insulator. Thus, an alternative GI has been highly desired. We observed that even an ultra thin Parylene-C layer is effective for keeping the channel surface clean and free from oxygen vacancies. The 8 nm Parylene-C film has a relatively low resistance and consequentially its capacitance does not dominate the total capacitance of the Parylene-C/HfO2 GI. The breakdown gate voltage at 300 K is usually more than 10 V (~ 3.4 MV/cm). At gate voltage of 3 V the carrier density measured by the Hall effect is about 3 ×1013 cm-2, competent to cause the Mott transition. Moreover, the field effect mobility reaches in the range of 10 cm2/Vs indicating the Parylene-C passivated surface is actually very clean.

Constraints on the origin of adakites and porphyry Cu-Mo mineralization in Chongjiang, Southern Gangdese, the Tibetan Plateau

NASA Astrophysics Data System (ADS)

Hu, Yong-bin; Liu, Ji-qiang; Ling, Ming-xing; Liu, Yan; Ding, Xing; Liu, Dun-yi; Sun, Wei-dong

2017-11-01

Chongjiang is a low-grade porphyry Cu deposit, located in the Gangdese belt, south Tibet. The petrogenesis and geodynamic settings of the Miocene intrusions associated with the deposit remain controversial. This study presents new results on in situ zircon Hf-O isotopic compositions and U-Pb ages, whole rock major and trace elements, and Sr-Nd isotopes for the adakitic intrusions from Chongjiang deposit. The ore-bearing biotite monzogranite porphyry has adakitic characteristics, with enriched large-ion-lithophile elements (LILE) and light rare earth elements (LREE), and depleted in high-field-strength elements (HFSE), P and Ti. LA-ICP-MS zircon U-Pb dating indicates that the ore-bearing and barren adakites were emplaced at 14.9 ± 0.3 Ma and 12.9 ± 0.3 Ma, respectively. The porphyry is characterized by relatively high initial 87Sr/86Sr ratios (0.7059 to 0.7066), and negative whole-rock εNd(t) values (- 3.8 to - 2.6). Zircon δ18O is slightly higher than mantle values (5.0 to 7.2‰), with varied εHf(t) (- 1.0 to 7.6). Most of the in situ zircon Hf-O isotopic data plot in a binary mixing trend between MORB and lower continental crust-derived melts. These results indicate contributions from mixing of a mantle-like source (e.g., slab melts) with continental crust. Interestingly, most of the samples plot in the field defined by Dabie adakites (representing partial melting of the lower continental crust), with several samples near/in the circum-Pacific adakite field (representing partial melting of subducted oceanic slabs), which seemingly indicates that Chongjiang adakites mostly formed through partial melting of lower continental crust, with a small amount derived from oceanic slab melts. These may be plausibly explained by plagioclase retention in the thickened Tibetan continental crust, which lowers Sr contents in the magmas during crustal assimilation. Such a model is supported by other adakite discrimination diagrams, which all point towards slab melting. Crustal contamination can compellingly explain the low grade of the Chongjiang deposit. Considering the temporal-spatial distribution of porphyry Cu deposits, geochemical characteristics and high oxygen fugacity, we propose that the subducting Ninetyeast Ridge probably played a critical role in controlling the formation of Miocene adakites and porphyry copper deposits in the eastern Gangdese belt.

ALD anti-reflection coatings at 1ω, 2ω, 3ω, and 4ω for high-power ns-laser application

NASA Astrophysics Data System (ADS)

Liu, Hao; Jensen, Lars; Ma, Ping; Ristau, Detlev

2018-04-01

Atomic layer deposition (ALD) facilitates the deposition of coatings with precise thickness, high surface conformity, structural uniformity, and nodular-free structure, which are properties desired in high-power laser coatings. ALD was studied to produce uniform and stable Al2O3 and HfO2 single layers and was employed to produce anti-reflection coatings for the harmonics (1ω, 2ω, 3ω, and 4ω) of the Nd:YAG laser. In order to qualify the ALD films for high-power laser applications, the band gap energy, absorption, and element content of single layers were characterized. The damage tests of anti-reflection coatings were carried out with a laser system operated at 1ω, 2ω, 3ω, and 4ω, respectively. The damage mechanism was discussed by analyzing the damage morphology and electric field intensity difference. ALD coatings exhibit stable growth rates, low absorption, and rather high laser-induced damage threshold (LIDT). The LIDT is limited by HfO2 as the employed high-index material. These properties indicate the high versatility of ALD films for applications in high-power coatings.

Growth and characterization of sol-gel derived CuGaO2 semiconductor thin films for UV photodetector application

NASA Astrophysics Data System (ADS)

Tsay, Chien-Yie; Chen, Ching-Lien

2017-06-01

In this study, a p-type wide-bandgap oxide semiconductor CuGaO2 thin film was grown on quartz substrate by sol-gel method. The authors report the influence of annealing temperature on the phase transformation, structural features, and electrical properties of sol-gel derived Cu-Ga-O thin films. At relatively low annealing temperatures (≤900 °C), the films are a mixture of CuGa2O4, CuGaO2, and CuO phases. At relatively high annealing temperatures (≥925 °C), the majority phase in the films is delafossite CuGaO2. All as-prepared Cu-Ga-O thin films exhibited p-type conductivity, as confirmed by Hall measurements. The mean electrical resistivity of the Cu-Ga-O films decreased from 3.54×104 Ω-cm to 1.35×102 Ω-cm and then increased slightly to 3.51×102 Ω-cm when the annealing temperature was increased from 850 °C to 950 °C. We found that annealing the Cu-based oxide thin films at 925 °C produced nearly phase-pure CuGaO2 thin films with good densification. Such thin films exhibited the best electrical properties: a mean electrical resistivity of 1.35×102 Ω-cm, and a mean hole concentration of 1.60×1016 cm-3. In addition, we also fabricated and characterized MSM-type CuGaO2 UV photodetectors on quartz substrates.

A post-weaning fish oil dietary intervention reverses adverse metabolic outcomes and 11β-hydroxysteroid dehydrogenase type 1 expression in postnatal overfed rats.

PubMed

Dai, Yanyan; Yang, Fan; Zhou, Nan; Sha, Lijun; Zhou, Shanshan; Wang, Junle; Li, Xiaonan

2016-11-01

Early life is considered a critical period for determining long-term metabolic health. Postnatal over-nutrition may alter glucocorticoid (GC) metabolism and increase the risk of developing obesity and metabolic disorders in adulthood. Our aim was to assess the effects of the dose and timing of a fish oil diet on obesity and the expression of GC-activated enzyme 11β-hydroxysteroid dehydrogenase type 1 (HSD1) in postnatal overfed rats. Litter sizes were adjusted to three (small litter (SL)) or ten (normal litter) rats on postnatal day 3 to induce overfeeding or normal feeding. The SL rats were divided into three groups after weaning: high-dose fish oil (HFO), low-dose fish oil (LFO) and standard-diet groups. After 10 weeks, the HFO diet reduced body weight gain (16 %, P0·05). In conclusion, the post-weaning HFO diet could reverse adverse outcomes and decrease tissue GC activity in postnatal overfed rats.

Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium-gallium-zinc oxide gate stack.

PubMed

Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

2018-07-20

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium-gallium-zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>10 4 ). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium–gallium–zinc oxide gate stack

NASA Astrophysics Data System (ADS)

Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

2018-07-01

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium–gallium–zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>104). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics.

PubMed

Choi, Sungho; An, Youngseo; Lee, Changmin; Song, Jeongkeun; Nguyen, Manh-Cuong; Byun, Young-Chul; Choi, Rino; McIntyre, Paul C; Kim, Hyoungsub

2017-08-29

We studied the impact of H 2 pressure during post-metallization annealing on the chemical composition of a HfO 2 /Al 2 O 3 gate stack on a HCl wet-cleaned In 0.53 Ga 0.47 As substrate by comparing the forming gas annealing (at atmospheric pressure with a H 2 partial pressure of 0.04 bar) and H 2 high-pressure annealing (H 2 -HPA at 30 bar) methods. In addition, the effectiveness of H 2 -HPA on the passivation of the interface states was compared for both p- and n-type In 0.53 Ga 0.47 As substrates. The decomposition of the interface oxide and the subsequent out-diffusion of In and Ga atoms toward the high-k film became more significant with increasing H 2 pressure. Moreover, the increase in the H 2 pressure significantly improved the capacitance‒voltage characteristics, and its effect was more pronounced on the p-type In 0.53 Ga 0.47 As substrate. However, the H 2 -HPA induced an increase in the leakage current, probably because of the out-diffusion and incorporation of In/Ga atoms within the high-k stack.

Biogenic iron mineralization at Iron Mountain, CA with implications for detection with the Mars Curiosity rover

USGS Publications Warehouse

Williams, Amy J.; Sumner, Dawn Y.; Alpers, Charles N.; Campbell, Kate M.; Nordstrom, D. Kirk

2014-01-01

(Introduction) Microbe-mineral interactions and biosignature preservation in oxidized sulfidic ore bodies (gossans) are prime candidates for astrobiological study. Such oxidized iron systems have been proposed as analogs for some Martian environments. Recent studies identified microbial fossils preserved as mineral-coated filaments. This study documents microbially-mediated mineral biosignatures in hydrous ferric oxide (HFO) and ferric oxyhydroxysulfates (FOHS) in three environments at Iron Mountain, CA. We investigated microbial community preservation via HFO and FOHS precipitation and the formation of filamentous mineral biosignatures. These environments included 1) actively precipitating (1000's yrs), naturally weathered HFO from in situ gossan, and 3) remobilized iron deposits, which contained lithified clastics and zones of HFO precipitate. We used published biogenicity criteria as guidelines to characterize the biogenicity of mineral filaments. These criteria included A) an actively precipitating environment where microbes are known to be coated in minerals, B) presence of extant microbial communities with carbon signatures, C) structures observable as a part of the host rock, and D) biological morphology, including cellular lumina, multiple member population, numerous taxa, variable and 3-D preservation, biological size ranges, uniform diameter, and evidence of flexibility. This study explores the relevance and detection of these biosignatures to possible Martian biosignatures. Similar filamentous biosignatures are resolvable by the Mars Hand Lens Imager (MAHLI) onboard the Mars Science Laboratory (MSL) rover, Curiosity, and may be identifiable as biogenic if present on Mars.

Performance investigation of InAs based dual electrode tunnel FET on the analog/RF platform

NASA Astrophysics Data System (ADS)

Anand, Sunny; Sarin, R. K.

2016-09-01

In this paper for the first time, InAs based doping-less Tunnel FET is proposed and investigated. This paper also demonstrates and discusses the impact of gate stacking (SiO2 + HfO2) with equivalent oxide thickness EOT = 0.8 for analog/RF performance. The charge plasma technique is used to form source/drain region on an intrinsic InAs body by selecting proper work function of metal electrode. The paper compares different combinations of gate stacking (SiO2 and HfO2) on the basis of different analog and RF parameters such as transconductance (gm), transconductance to drive current ratio (gm/ID), output conductance (gd), intrinsic gain (AV), total gate capacitance (Cgg) and unity-gain cutoff frequency (fT). The proposed device produces an ON state current of ION ∼6 mA along with ION/IOFF ∼1012, point subthreshold slope (SS ∼ 1.9 mV/dec), average subthreshold slope (AV-SS ∼ 14.2 mV/dec) and cut-off frequency in Terahertz. The focus of this work is to eliminate the fabrication issues and providing the enhanced performance compared to doped device.

Identification of compounds in heavy fuel oil that are chronically toxic to rainbow trout embryos by effects-driven chemical fractionation.

PubMed

Adams, Julie; Bornstein, Jason M; Munno, Keenan; Hollebone, Bruce; King, Thomas; Brown, R Stephen; Hodson, Peter V

2014-04-01

The present study isolated and identified compounds in heavy fuel oil 7102 (HFO 7102) that are bioavailable and chronically toxic to rainbow trout embryos (Oncorhynchus mykiss). An effects-driven chemical fractionation combined the chemical separation of oil with toxicity testing and chemical analyses of each fraction to identify the major classes of compounds associated with embryo toxicity. Toxicity was assessed with 2 exposure methods, a high-energy chemical dispersion of oil in water, which included oil droplets in test solutions, and water accommodated fractions which were produced by oiled gravel desorption columns, and which did not contain visible oil droplets. Fractions of HFO with high concentrations of naphthalenes, alkanes, asphaltenes, and resins were nontoxic to embryos over the range of concentrations tested. In contrast, fractions enriched with 3- to 4-ringed alkyl polycyclic aromatic hydrocarbons (PAHs) were embryotoxic, consistent with published studies of crude oils and individual alkyl PAHs. The rank order of fraction toxicity did not vary between the exposure methods and was consistent with their PAH content; fractions with higher-molecular weight alkyl PAHs were the most toxic. Exposure of juvenile trout to most fractions of HFO induced higher activities of cytochrome P450 enzymes, with a rank order of potency that varied with exposure method and differed somewhat from that of embryotoxicity. Induction reflected the bioavailability of PAHs but did not accurately predict embryotoxicity. © 2013 SETAC.

Humic and fulvic acids: sink or source in the availability of metals to the marine bivalves Macoma balthica and Potamocorbula amurensis?

USGS Publications Warehouse

Decho, Alan W.; Luoma, Samuel N.

1994-01-01

Humic acids (HA) and fulvic acids (FA) are common forms of organic matter in marine sediments, and are routinely ingested by deposit- and suspension-feeding animals. These compounds may be a sink for metals, implying that once metals are bound to humic substances they are no longer available to food webs. A series of experiments was conducted to quantitatively examine this premise using 2 estuarine bivalves from San Francisco Bay, USA: the suspension feeder Potarnocorbula arnurensis and the facultative deposit feeder Macoma balthica. HA and FA, isolated from marine sediments, were bound as organic coatings to either hydrous ferric oxides (HFO) or silica particles. Cd and Cr(II1) were adsorbed to the organic coatings or directly to uncoated HFO and silica particles. Pulse-chase laboratory feeding expenments using 109Cd and 51Cr(III) were then conducted to determine absorption efficiencies of Cd and Cr for individual specimens using each of the particle types. The results demonstrated that: (1) absorption of Cr(I1I) from all types of non-living particles was consistently low (< 11%). Ingested Cd showed greater bioavailability than Cr(IIl), perhaps due to differences in metal chemistry. (2) Bivalves absorbed Cd bound to uncoated HFO or silica particles (i.e. with no HA or FA present). (3) The presence of organic coatings on particles reduced Cd bioavailabhty compared with uncoated particles. (4) Both geochemical and biological conditions affected the food chain transfer of Cd. The data suggest that in marine systems inorganic and organic-coated particles are predominantly a sink for Cr in sediments. In the transfer of Cd to consumer animals, inorganic particles and humic substances can act as a link (although not a highly efficient one) under oxidized conditions.

Humic and fulvic acids: sink or source in the availability of metals to the marine bivalves Macoma balthicaand Potamocorbula amurensis?

USGS Publications Warehouse

Decho, Alan; Luoma, Samuel N.

1994-01-01

Humic acids (HA) and fulvic acids (FA) are common forms of organic matter in marine sedirnents, and are routinely ingested by deposit- and suspension-feeding animals. These compounds may be a sink for metals, implying that once metals are bound to humic substances they are no longer available to food webs. A series of experiments was conducted to quantitatively examine this premise using 2 estuarine bivalves from San Francisco Bay, USA: the suspension feeder Potarnocorbula arnurensis and the facultative deposit feeder Macoma balthica. HA and FA, isolated from marine sediments, were bound as organic coatings to either hydrous ferric oxides (HFO) or silica particles. Cd and Cr(II1) were adsorbed to the organic coatings or directly to uncoated HFO and silica particles. Pulse-chase laboratory feeding expenments using '"'Cd and "Cr(III) were then conducted to determine absorption efficiencies of Cd and Cr for individual specimens using each of the partlcle types. The results demonstrated that: (1) absorption of Cr(I1I) from all types of non-living particles was consistently low (< 11%). Ingested Cd showed greater bioavailability than Cr(IIl), perhaps due to differences in metal chemistry. (2) Bivalves absorbed Cd bound to uncoated HFO or silica particles (i.e. with no HA or FA present). (3) The presence of organic coatings on part~cles reduced Cd bioavailabhty compared with uncoated particles. (4) Both geochemical and biological conditions affected the food chain transfer of Cd. The data suggest that in marine systems inorganic and organic-coated particles are predominantly a sink for Cr in sediments. In the transfer of Cd to consumer animals, inorganic particles and humic substances can act as a link (although not a highly efficient one) under oxidized conditions.

Electron beam technology for multipollutant emissions control from heavy fuel oil-fired boiler.

PubMed

Chmielewski, Andrzej G; Ostapczuk, Anna; Licki, Janusz

2010-08-01

The electron beam treatment technology for purification of exhaust gases from the burning of heavy fuel oil (HFO) mazout with sulfur content approximately 3 wt % was tested at the Institute of Nuclear Chemistry and Technology laboratory plant. The parametric study was conducted to determine the sulfur dioxide (SO2), oxides of nitrogen (NO(x)), and polycyclic aromatic hydrocarbon (PAH) removal efficiency as a function of temperature and humidity of irradiated gases, absorbed irradiation dose, and ammonia stoichiometry process parameters. In the test performed under optimal conditions with an irradiation dose of 12.4 kGy, simultaneous removal efficiencies of approximately 98% for SO2, and 80% for NO(x) were recorded. The simultaneous decrease of PAH and one-ringed aromatic hydrocarbon (benzene, toluene, and xylenes [BTX]) concentrations was observed in the irradiated flue gas. Overall removal efficiencies of approximately 42% for PAHs and 86% for BTXs were achieved with an irradiation dose 5.3 kGy. The decomposition ratio of these compounds increased with an increase of absorbed dose. The decrease of PAH and BTX concentrations was followed by the increase of oxygen-containing aromatic hydrocarbon concentrations. The PAH and BTX decomposition process was initialized through the reaction with hydroxyl radicals that formed in the electron beam irradiated flue gas. Their decomposition process is based on similar principles as the primary reaction concerning SO2 and NO(x) removal; that is, free radicals attack organic compound chains or rings, causing volatile organic compound decomposition. Thus, the electron beam flue gas treatment (EBFGT) technology ensures simultaneous removal of acid (SO2 and NO(x)) and organic (PAH and BTX) pollutants from flue gas emitted from burning of HFO. This technology is a multipollutant emission control technology that can be applied for treatment of flue gas emitted from coal-, lignite-, and HFO-fired boilers. Other thermal processes such as metallurgy and municipal waste incinerators are potential candidates for this technology application.

Optical control of capacitance in a metal-insulator-semiconductor diode with embedded metal nanoparticles

NASA Astrophysics Data System (ADS)

Mikhelashvili, V.; Ankonina, G.; Kauffmann, Y.; Atiya, G.; Kaplan, W. D.; Padmanabhan, R.; Eisenstein, G.

2017-06-01

This paper describes a metal-insulator-semiconductor (MIS) capacitor with flat capacitance voltage characteristics and a small quadratic voltage capacitance coefficient. The device characteristics resemble a metal-insulator-metal diode except that here the capacitance depends on illumination and exhibits a strong frequency dispersion. The device incorporates Fe nanoparticles (NPs), mixed with SrF2, which are embedded in an insulator stack of SiO2 and HfO2. Positively charged Fe ions induce dipole type traps with an electronic polarization that is enhanced by photogenerated carriers injected from the substrate and/or by inter nanoparticle exchange of carriers. The obtained characteristics are compared with those of five other MIS structures: two based on Fe NPs, one with and the other without SrF2 sublayers. Additionally, devices contain Co NPs embedded in SrF2 sublayers, and finally, two structures have no NPs, with one based on a stack of SiO2 and HfO2 and the other which also includes SrF2. Only structures containing Fe NPs, which are incorporated into SrF2, yield a voltage independent capacitance, the level of which can be changed by illumination. These properties are essential in radio frequency/analog mixed signal applications.

Indium diffusion through high-k dielectrics in high-k/InP stacks

NASA Astrophysics Data System (ADS)

Dong, H.; Cabrera, W.; Galatage, R. V.; Santosh KC, Brennan, B.; Qin, X.; McDonnell, S.; Zhernokletov, D.; Hinkle, C. L.; Cho, K.; Chabal, Y. J.; Wallace, R. M.

2013-08-01

Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface.

How reduced vacuum pumping capability in a coating chamber affects the laser damage resistance of HfO 2/SiO 2 antireflection and high reflection coatings.

DOE PAGES

Field, Ella Suzanne; Bellum, John Curtis; Kletecka, Damon E.

2016-06-01

Optical coatings with the highest laser damage thresholds rely on clean conditions in the vacuum chamber during the coating deposition process. A low base pressure in the coating chamber, as well as the ability of the vacuum system to maintain the required pressure during deposition, are important aspects of limiting the amount of defects in an optical coating that could induce laser damage. Our large optics coating chamber at Sandia National Laboratories normally relies on three cryo pumps to maintain low pressures for e-beam coating processes. However, on occasion, one or more of the cryo pumps have been out ofmore » commission. In light of this circumstance, we explored how deposition under compromised vacuum conditions resulting from the use of only one or two cryo pumps affects the laser-induced damage thresholds of optical coatings. Finally, the coatings of this study consist of HfO 2 and SiO 2 layer materials and include antireflection coatings for 527 nm at normal incidence, and high reflection coatings for 527 nm, 45⁰ angle of incidence (AOI), in P-polarization (P-pol).« less

How reduced vacuum pumping capability in a coating chamber affects the laser damage resistance of HfO 2/SiO 2 antireflection and high-reflection coatings

DOE PAGES

Field, Ella S.; Bellum, John C.; Kletecka, Damon E.

2016-07-15

Here, optical coatings with the highest laser damage thresholds rely on clean conditions in the vacuum chamber during the coating deposition process. A low-base pressure in the coating chamber, as well as the ability of the vacuum system to maintain the required pressure during deposition, are important aspects of limiting the amount of defects in an optical coating that could induce laser damage. Our large optics coating chamber at Sandia National Laboratories normally relies on three cryo pumps to maintain low pressures for e-beam coating processes. However, on occasion, one or more of the cryo pumps have been out ofmore » commission. In light of this circumstance, we explored how deposition under compromised vacuum conditions resulting from the use of only one or two cryo pumps affects the laser-induced damage thresholds of optical coatings. The coatings of this study consist of HfO 2 and SiO 2 layer materials and include antireflection coatings for 527 nm at normal incidence and high-reflection coatings for 527 nm at 45-deg angle of incidence in P-polarization.« less

Glass-water interaction: Effect of high-valence cations on glass structure and chemical durability

NASA Astrophysics Data System (ADS)

Hopf, J.; Kerisit, S. N.; Angeli, F.; Charpentier, T.; Icenhower, J. P.; McGrail, B. P.; Windisch, C. F.; Burton, S. D.; Pierce, E. M.

2016-05-01

Borosilicate glass is a durable solid, but it dissolves when in contact with aqueous fluids. The dissolution mechanism, which involves a variety of sequential reactions that occur at the solid-fluid interface, has important implications for the corrosion resistance of industrial and nuclear waste glasses. In this study, spectroscopic measurements, dissolution experiments, and Monte Carlo simulations were performed to investigate the effect of high-valence cations (HVC) on the mechanisms of glass dissolution under dilute and near-saturated conditions. Raman and NMR spectroscopy were used to determine the structural changes that occur in glass, specifically network formers (e.g., Al, Si, and B), with the addition of the HVC element hafnium in the Na2O-Al2O3-B2O3-HfO2-SiO2 system (e.g., Na/[Al + B] = 1.0 and HfO2/SiO2 from 0.0 to 0.42). Spectroscopic measurements revealed that increasing hafnium content decreases N4 (tetrahedral boron/total boron) and increases the amount of Si-O-Hf moieties in the glass. Results from flow-through experiments conducted under dilute and near-saturated conditions show a decrease of approximately 100× or more in the dissolution rate over the series from 0 to 20 mol% HfO2. Comparing the average steady-state rates obtained under dilute conditions to the rates obtained for near-saturated conditions reveals a divergence in the magnitude between the average steady state rates measured in these different conditions. The reason for this divergence was investigated more thoroughly using Monte Carlo simulations. Simulations indicate that the divergence in glass dissolution behavior under dilute and near-saturated conditions result from the stronger binding of Si sites that deposit on the surface from the influent when Hf is present in the glass. As a result, the residence time at the glass surface of these newly-formed Si sites is longer in the presence of Hf, which increases the density of anchor sites from which altered layers with higher Si densities can form. These results illustrate the importance of understanding solid-water/solid-fluid interactions by linking macroscopic reaction kinetics to nanometer scale interfacial processes.

Stress-Induced Resistive Switching in Pt/HfO2/Ti Devices

NASA Astrophysics Data System (ADS)

Zeevi, Gilad; Katsman, Alexander; Yaish, Yuval E.

2018-02-01

In the present work, we study the initial SET mechanism of resistive switching (RS) in Pt/HfO2/Ti devices under a static electrical stress and the RS mechanism under a bias sweeping mode with rates of 100 mV/s-300 mV/s. We characterize the thin HfO2 dielectric layer by x-ray photoelectron spectroscopy and x-ray diffraction. These findings show that the layer structure is stoichiometric and nanocrystalline with a crystal diameter of ˜ 14 Å. We measure the temporal dependence of the conductive filament growth at different temperatures and for various biases. Furthermore, these devices present stable bipolar resistive switching with a high-to-low resistive state (HRS/LRS) ratio of more than three orders of magnitude. Activation energy E RS ≈ 0.56 eV and drift current parameter V 0 ≈ 0.07 V were determined from the temporal dependence of the initial `SET' process, first HRS to LRS transition [for static electrical stress of V DS = (4.7-5.0 V)]. We analyze the results according to our model suggesting generation of double-charge oxygen vacancies at the anode and their diffusion across the dielectric layer. The double-charge vacancies transform to a single charge and then to neutral vacancies by capturing hot electrons, and form a conductive filament as soon as a critical neutral-vacancy cluster is formed across the dielectric layer.

Sintering and Creep Behavior of Plasma-Sprayed Zirconia and Hafnia Based Thermal Barrier Coatings

NASA Technical Reports Server (NTRS)

Zhu, Dongming; Miller, Robert A.

1998-01-01

The sintering and creep of plasma-sprayed ceramic thermal barrier coatings under high temperature conditions are complex phenomena. Changes in thermomechanical and thermophysical properties and in the stress response of these coating systems as a result of the sintering and creep processes are detrimental to coating thermal fatigue resistance and performance. In this paper, the sintering characteristics of ZrO2-8wt%y2O3, ZrO2-25wt%CeO2-2.5wt%Y2O3, ZrO2-6w%NiO- 9wt%Y2O3, ZrO2-6wt%Sc2O3-2wt%y2O3 and HfO2-27wt%y2O3 coating materials were investigated using dilatometry. It was found that the HfO2-Y2O3 and baseline ZrO2-Y2O3 exhibited the best sintering resistance, while the NiO-doped ZrO2-Y2O3 showed the highest shrinkage strain rates during the tests. Higher shrinkage strain rates of the coating materials were also observed when the specimens were tested in Ar+5%H2 as compared to in air. This phenomenon was attributed to an enhanced metal cation interstitial diffusion mechanism under the reducing conditions. It is proposed that increased chemical stability of coating materials will improve the material sintering resistance.

GPi Oscillatory Activity Differentiates Tics from the Resting State, Voluntary Movements, and the Unmedicated Parkinsonian State

PubMed Central

Jimenez-Shahed, Joohi; Telkes, Ilknur; Viswanathan, Ashwin; Ince, Nuri F.

2016-01-01

Background: Deep brain stimulation (DBS) is an emerging treatment strategy for severe, medication-refractory Tourette syndrome (TS). Thalamic (Cm-Pf) and pallidal (including globus pallidus interna, GPi) targets have been the most investigated. While the neurophysiological correlates of Parkinson's disease (PD) in the GPi and subthalamic nucleus (STN) are increasingly recognized, these patterns are not well characterized in other disease states. Recent findings indicate that the cross-frequency coupling (CFC) between beta band and high frequency oscillations (HFOs) within the STN in PD patients is pathologic. Methods: We recorded intraoperative local field potentials (LFPs) from the postero-ventrolateral GPi in three adult patients with TS at rest, during voluntary movements, and during tic activity and compared them to the intraoperative GPi-LFP activity recorded from four unmedicated PD patients at rest. Results: In all PD patients, we noted excessive beta band activity (13–30 Hz) at rest which consistently modulated the amplitude of the co-existent HFOs observed between 200 and 400 Hz, indicating the presence of beta-HFO CFC. In all 3TS patients at rest, we observed theta band activity (4–7 Hz) and HFOs. Two patients had beta band activity, though at lower power than theta oscillations. Tic activity was associated with increased high frequency (200–400 Hz) and gamma band (35–200 Hz) activity. There was no beta-HFO CFC in TS patients at rest. However, CFC between the phase of 5–10 Hz band activity and the amplitude of HFOs was found in two TS patients. During tics, this shifted to CFC between the phase of beta band activity and the amplitude of HFOs in all subjects. Conclusions: To our knowledge this is the first study that shows that beta-HFO CFC exists in the GPi of TS patients during tics and at rest in PD patients, and suggests that this pattern might be specific to pathologic/involuntary movements. Furthermore, our findings suggest that during tics, resting state 5–10 Hz-HFO CFC shifts to beta-HFO CFC which can be used to trigger stimulation in a closed loop system when tics are present. PMID:27733815

Synthesis of Hf 8O 7, a new binary hafnium oxide, at high pressures and high temperatures

DOE PAGES

Bayarjargal, L.; Morgenroth, W.; Schrodt, N.; ...

2017-01-23

In this paper, two binary phases in the system Hf-O have been synthesized at pressures between 12 and 34 GPa and at temperatures up to 3000 K by reacting Hf with HfO 2 using a laser-heated diamond anvil cell. In situ X-ray diffraction in conjunction with density functional theory calculations has been employed to characterize a previously unreported tetragonal Hf 8O 7 phase. This phase has a structure which is based on an fcc Hf packing with oxygen atoms occupying octahedral interstitial positions. Its predicted bulk modulus is 223(1) GPa. The second phase has a composition close to Hf 6O,more » where oxygen atoms occupy octahedral interstitial sites in an hcp Hf packing. Its experimentally determined bulk modulus is 128(30) GPa. Finally, the phase diagram of Hf metal was further constrained at high pressures and temperatures, where we show that α-Hf transforms to β-Hf around 2160(150) K and 18.2 GPa and β-Hf remains stable up to at least 2800 K at this pressure.« less

Quantitative Analysis of Single and Mix Food Antiseptics Basing on SERS Spectra with PLSR Method

NASA Astrophysics Data System (ADS)

Hou, Mengjing; Huang, Yu; Ma, Lingwei; Zhang, Zhengjun

2016-06-01

Usage and dosage of food antiseptics are very concerned due to their decisive influence in food safety. Surface-enhanced Raman scattering (SERS) effect was employed in this research to realize trace potassium sorbate (PS) and sodium benzoate (SB) detection. HfO2 ultrathin film-coated Ag NR array was fabricated as SERS substrate. Protected by HfO2 film, the SERS substrate possesses good acid resistance, which enables it to be applicable in acidic environment where PS and SB work. Regression relationship between SERS spectra of 0.3~10 mg/L PS solution and their concentration was calibrated by partial least squares regression (PLSR) method, and the concentration prediction performance was quite satisfactory. Furthermore, mixture solution of PS and SB was also quantitatively analyzed by PLSR method. Spectrum data of characteristic peak sections corresponding to PS and SB was used to establish the regression models of these two solutes, respectively, and their concentrations were determined accurately despite their characteristic peak sections overlapping. It is possible that the unique modeling process of PLSR method prevented the overlapped Raman signal from reducing the model accuracy.

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

NASA Astrophysics Data System (ADS)

Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

2013-06-01

In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

Two-dimensional models for the optical response of thin films

NASA Astrophysics Data System (ADS)

Li, Yilei; Heinz, Tony F.

2018-04-01

In this work, we present a systematic study of 2D optical models for the response of thin layers of material under excitation by normally incident light. The treatment, within the framework of classical optics, analyzes a thin film supported by a semi-infinite substrate, with both the thin layer and the substrate assumed to exhibit local, isotropic linear response. Starting from the conventional three-dimensional (3D) slab model of the system, we derive a two-dimensional (2D) sheet model for the thin film in which the optical response is described by a sheet optical conductivity. We develop criteria for the applicability of this 2D sheet model for a layer with an optical thickness far smaller than the wavelength of the light. We examine in detail atomically thin semi-metallic and semiconductor van-der-Waals layers and ultrathin metal films as representative examples. Excellent agreement of the 2D sheet model with the 3D slab model is demonstrated over a broad spectral range from the radio frequency limit to the near ultraviolet. A linearized version of system response for the 2D model is also presented for the case where the influence of the optically thin layer is sufficiently weak. Analytical expressions for the applicability and accuracy of the different optical models are derived, and the appropriateness of the linearized treatment for the materials is considered. We discuss the advantages, as well as limitations, of these models for the purpose of deducing the optical response function of the thin layer from experiment. We generalize the theory to take into account in-plane anisotropy, layered thin film structures, and more general substrates. Implications of the 2D model for the transmission of light by the thin film and for the implementation of half- and totally absorbing layers are discussed.

Real-time analysis of organic compounds in ship engine aerosol emissions using resonance-enhanced multiphoton ionisation and proton transfer mass spectrometry.

PubMed

Radischat, Christian; Sippula, Olli; Stengel, Benjamin; Klingbeil, Sophie; Sklorz, Martin; Rabe, Rom; Streibel, Thorsten; Harndorf, Horst; Zimmermann, Ralf

2015-08-01

Organic combustion aerosols from a marine medium-speed diesel engine, capable to run on distillate (diesel fuel) and residual fuels (heavy fuel oil), were investigated under various operating conditions and engine parameters. The online chemical characterisation of the organic components was conducted using a resonance-enhanced multiphoton ionisation time-of-flight mass spectrometer (REMPI TOF MS) and a proton transfer reaction-quadrupole mass spectrometer (PTR-QMS). Oxygenated species, alkenes and aromatic hydrocarbons were characterised. Especially the aromatic hydrocarbons and their alkylated derivatives were very prominent in the exhaust of both fuels. Emission factors of known health-hazardous compounds (e.g. mono- and poly-aromatic hydrocarbons) were calculated and found in higher amounts for heavy fuel oil (HFO) at typical engine loadings. Lower engine loads lead in general to increasing emissions for both fuels for almost every compound, e.g. naphthalene emissions varied for diesel fuel exhaust between 0.7 mg/kWh (75 % engine load, late start of injection (SOI)) and 11.8 mg/kWh (10 % engine load, late SOI) and for HFO exhaust between 3.3 and 60.5 mg/kWh, respectively. Both used mass spectrometric techniques showed that they are particularly suitable methods for online monitoring of combustion compounds and very helpful for the characterisation of health-relevant substances. Graphical abstract Three-dimensional REMPI data of organic species in diesel fuel and heavy fuel oil exhaust.

Integration of active devices on smart polymers for neural interfaces

NASA Astrophysics Data System (ADS)

Avendano-Bolivar, Adrian Emmanuel

The increasing ability to ever more precisely identify and measure neural interactions and other phenomena in the central and peripheral nervous systems is revolutionizing our understanding of the human body and brain. To facilitate further understanding, more sophisticated neural devices, perhaps using microelectronics processing, must be fabricated. Materials often used in these neural interfaces, while compatible with these fabrication processes, are not optimized for long-term use in the body and are often orders of magnitude stiffer than the tissue with which they interact. Using the smart polymer substrates described in this work, suitability for processing as well as chronic implantation is demonstrated. We explore how to integrate reliable circuitry onto these flexible, biocompatible substrates that can withstand the aggressive environment of the body. To increase the capabilities of these devices beyond individual channel sensing and stimulation, active electronics must also be included onto our systems. In order to add this functionality to these substrates and explore the limits of these devices, we developed a process to fabricate single organic thin film transistors with mobilities up to 0.4 cm2/Vs and threshold voltages close to 0V. A process for fabricating organic light emitting diodes on flexible substrates is also addressed. We have set a foundation and demonstrated initial feasibility for integrating multiple transistors onto thin-film flexible devices to create new applications, such as matrix addressable functionalized electrodes and organic light emitting diodes. A brief description on how to integrate waveguides for their use in optogenetics is addressed. We have built understanding about device constraints on mechanical, electrical and in vivo reliability and how various conditions affect the electronics' lifetime. We use a bi-layer gate dielectric using an inorganic material such as HfO 2 combined with organic Parylene-c. A study of reliability of widely used Parylene-c encapsulation for in vivo conditions for thin film transistors is presented. These various inquiries, taken in their entirety, facilitate understanding of fundamental problems for biocompatible, chronic electronic device implants in the body, leading to a new set of tools and devices that will help understand complex problems in neuroscience and materials research.

Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.

PubMed

Liu, Xinke; Ang, Kah-Wee; Yu, Wenjie; He, Jiazhu; Feng, Xuewei; Liu, Qiang; Jiang, He; Dan Tang; Wen, Jiao; Lu, Youming; Liu, Wenjun; Cao, Peijiang; Han, Shun; Wu, Jing; Liu, Wenjun; Wang, Xi; Zhu, Deliang; He, Zhubing

2016-04-22

Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of high performance BP transistors integrated with HfO2 high-k gate dielectric using a low temperature CMOS process. The fabricated devices were shown to demonstrate a near ideal subthreshold swing (SS) of ~69 mV/dec and a room temperature hole mobility of exceeding >400 cm(2)/Vs. These figure-of-merits are benchmarked to be the best-of-its-kind, which outperform previously reported BP transistors realized on traditional SiO2 gate dielectric. X-ray photoelectron spectroscopy (XPS) analysis further reveals the evidence of a more chemically stable BP when formed on HfO2 high-k as opposed to SiO2, which gives rise to a better interface quality that accounts for the SS and hole mobility improvement. These results unveil the potential of black phosphorus as an emerging channel material for future nanoelectronic device applications.

Zircon U-Pb ages and Hf-O isotopic composition of migmatites from the Zanjan-Takab complex, NW Iran: Constraints on partial melting of metasediments

NASA Astrophysics Data System (ADS)

Moghadam, Hadi Shafaii; Li, Xian-Hua; Stern, Robert J.; Ghorbani, Ghasem; Bakhshizad, Farzaneh

2016-01-01

We study migmatites and other metamorphic rocks in the Zanjan-Takab region of NW Iran and use these results to report the first evidence of Oligocene core complex formation in Iran. Four samples of migmatites associated with paragneisses, including leucosomes and associated para-amphibolite melanosomes were selected for U-Pb dating and Hf-O isotopic analysis. Zircon cores - interpreted as originally detrital zircons - have variable ages that peak at ca. 100-110 Ma, but their sedimentation age - indicated by the youngest 206Pb/238U ages - is ca. 35-40 Ma. New zircons associated with incipient melting occur as overgrowths around zircon cores and/or as newly grown grains. Morphologies and internal structures suggest that rim growth and formation of new zircons were associated with partial melting. All four samples contain zircons with rims that yield 206Pb/238U ages of 28-25 Ma, indicating that partial melting occurred in Late Oligocene time. δ18O values for zircon rims vary between 8.2 and 12.3‰, significantly higher than expected for mantle inputs (δ18O 6‰) and consistent with equilibrium with surface materials. Zircon rims yield εHf(t) between 2.2 and 12.4 and two-stage Hf model ages of 448-562 Ma, indicating that the region is underlain by Cadomian-Caledonian crust. According to the Hf-O isotopic values, the main mechanism forming zircon rims was dissolution of pre-existing detrital zircons with reprecipitation of new zircon shortly thereafter. Oligocene ages indicate that partial melting accompanied core complex formation in the Zanjan-Takab region. Extension, melting, and core complex formation in south-central Iran are Eocene in age, but younger ages of Oligocene-Miocene in NW Iran and Turkey indicate that extension was distributed throughout the region during Cenozoic time.

Surface complexation modeling for predicting solid phase arsenic concentrations in the sediments of the Mississippi River Valley alluvial aquifer, Arkansas, USA

USGS Publications Warehouse

Sharif, M.S.U.; Davis, R.K.; Steele, K.F.; Kim, B.; Hays, P.D.; Kresse, T.M.; Fazio, J.A.

2011-01-01

The potential health impact of As in drinking water supply systems in the Mississippi River Valley alluvial aquifer in the state of Arkansas, USA is significant. In this context it is important to understand the occurrence, distribution and mobilization of As in the Mississippi River Valley alluvial aquifer. Application of surface complexation models (SCMs) to predict the sorption behavior of As and hydrous Fe oxides (HFO) in the laboratory has increased in the last decade. However, the application of SCMs to predict the sorption of As in natural sediments has not often been reported, and such applications are greatly constrained by the lack of site-specific model parameters. Attempts have been made to use SCMs considering a component additivity (CA) approach which accounts for relative abundances of pure phases in natural sediments, followed by the addition of SCM parameters individually for each phase. Although few reliable and internally consistent sorption databases related to HFO exist, the use of SCMs using laboratory-derived sorption databases to predict the mobility of As in natural sediments has increased. This study is an attempt to evaluate the ability of the SCMs using the geochemical code PHREEQC to predict solid phase As in the sediments of the Mississippi River Valley alluvial aquifer in Arkansas. The SCM option of the double-layer model (DLM) was simulated using ferrihydrite and goethite as sorbents quantified from chemical extractions, calculated surface-site densities, published surface properties, and published laboratory-derived sorption constants for the sorbents. The model results are satisfactory for shallow wells (10.6. m below ground surface), where the redox condition is relatively oxic or mildly suboxic. However, for the deep alluvial aquifer (21-36.6. m below ground surface) where the redox condition is suboxic to anoxic, the model results are unsatisfactory. ?? 2011 Elsevier Ltd.

Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET.

PubMed

Xiong, Yuhua; Chen, Xiaoqiang; Wei, Feng; Du, Jun; Zhao, Hongbin; Tang, Zhaoyun; Tang, Bo; Wang, Wenwu; Yan, Jiang

2016-12-01

Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent gate oxide thickness (EOT) of ~0.69 nm and acceptable gate leakage current density of 0.61 A/cm 2 @ (V fb  - 1)V could be obtained. The conduction mechanism through the gate dielectric is dominated by the F-N tunneling in the gate voltage range of -0.5 to -2 V. Under the same physical thickness and process flow, lower EOT and higher I on /I off ratio could be obtained while using Hf-Ti-O as gate dielectric compared with HfO 2 . With Hf-Ti-O as gate dielectric, two ETSOI PMOSFETs with gate width/gate length (W/L) of 0.5 μm/25 nm and 3 μm/40 nm show good performances such as high I on , I on /I off ratio in the magnitude of 10 5 , and peak transconductance, as well as suitable threshold voltage (-0.3~-0.2 V). Particularly, ETSOI PMOSFETs show superior short-channel control capacity with DIBL <82 mV/V and subthreshold swing <70 mV/decade.

Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO 2 Memristor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Hao; Han, Lili; Lin, Peng

Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated that metal cations could also play an important role, but no direct physical characterizations have been reported yet. We report a Ta/HfO 2/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention. We also programmed the device to 24 discrete resistance levels, and also demonstrated over a million (220) epochs of potentiation andmore » depression, suggesting that our devices can be used for both multi-level non-volatile memory and neuromorphic computing applications. More importantly, we directly observed a sub-10 nm Ta-rich and O-deficient conduction channel within the HfO 2 layer that is responsible for the switching. Our work deepens our understanding of the resistance switching mechanism behind oxide-based memristive devices and paves the way for further device performance optimization for a broad spectrum of applications.« less

Improving subthreshold swing to thermionic emission limit in carbon nanotube network film-based field-effect

NASA Astrophysics Data System (ADS)

Zhao, Chenyi; Zhong, Donglai; Qiu, Chenguang; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

2018-01-01

In this letter, we explore the vertical scaling-down behavior of carbon nanotube (CNT) network film field-effect transistors (FETs) and show that by using a high-efficiency gate insulator, we can substantially improve the subthreshold swing (SS) and its uniformity. By using an HfO2 layer with a thickness of 7.3 nm as the gate insulator, we fabricated CNT network film FETs with a long channel (>2 μm) that exhibit an SS of approximately 60 mV/dec. The preferred thickness of HfO2 as the gate insulator in a CNT network FET is between 7 nm and 10 nm, simultaneously yielding an excellent SS (<80 mV/decade) and low gate leakage. However, because of the statistical fluctuations of the network CNT channel, the lateral scaling of CNT network film-based FETs is more difficult than that of conventional FETs. Experiments suggest that excellent SS is difficult to achieve statistically in CNT network film FETs with a small channel length (smaller than the mean length of the CNTs), which eventually limits the further scaling down of this kind of CNT FET to the sub-micrometer regime.

Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO 2 Memristor

DOE PAGES

Jiang, Hao; Han, Lili; Lin, Peng; ...

2016-06-23

Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated that metal cations could also play an important role, but no direct physical characterizations have been reported yet. We report a Ta/HfO 2/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention. We also programmed the device to 24 discrete resistance levels, and also demonstrated over a million (220) epochs of potentiation andmore » depression, suggesting that our devices can be used for both multi-level non-volatile memory and neuromorphic computing applications. More importantly, we directly observed a sub-10 nm Ta-rich and O-deficient conduction channel within the HfO 2 layer that is responsible for the switching. Our work deepens our understanding of the resistance switching mechanism behind oxide-based memristive devices and paves the way for further device performance optimization for a broad spectrum of applications.« less

The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2.

PubMed

Goh, Youngin; Jeon, Sanghun

2018-08-17

Ferroelectric tunnel junctions (FTJs) have attracted research interest as promising candidates for non-destructive readout non-volatile memories. Unlike conventional perovskite FTJs, hafnia FTJs offer many advantages in terms of scalability and CMOS compatibility. However, so far, hafnia FTJs have shown poor endurance and relatively low resistance ratios and these have remained issues for real device applications. In our study, we fabricated HfZrO(HZO)-based FTJs with various electrodes (TiN, Si, SiGe, Ge) and improved the memory performance of HZO-based FTJs by using the asymmetry of the charge screening lengths of the electrodes. For the HZO-based FTJ with a Ge substrate, the effective barrier afforded by this FTJ can be electrically modulated because of the space charge-limited region formed at the ferroelectric/semiconductor interface. The optimized HZO-based FTJ with a Ge bottom electrode presents excellent ferroelectricity with a high remnant polarization of 18 μC cm -2 , high tunneling electroresistance value of 30, good retention at 85 °C and high endurance of 10 7 . The results demonstrate the great potential of HfO 2 -based FTJs in non-destructive readout non-volatile memories.

Probing localized strain in solution-derived YB a2C u3O7 -δ nanocomposite thin films

NASA Astrophysics Data System (ADS)

Guzman, Roger; Gazquez, Jaume; Mundet, Bernat; Coll, Mariona; Obradors, Xavier; Puig, Teresa

2017-07-01

Enhanced pinning due to nanoscale strain is unique to the high-Tc cuprates, where pairing may be modified with lattice distortion. Therefore a comprehensive understanding of the defect landscape is required for a broad range of applications. However, determining the type and distribution of defects and their associated strain constitutes a critical task, and for this aim, real-space techniques for atomic resolution characterization are necessary. Here, we use scanning transmission electron microscopy (STEM) to study the atomic structure of individual defects of solution-derived YB a2C u3O7 (YBCO) nanocomposites, where the inclusion of incoherent secondary phase nanoparticles within the YBCO matrix dramatically increases the density of Y1B a2C u4O8 (Y124) intergrowths, the commonest defect in YBCO thin films. The formation of the Y124 is found to trigger a concatenation of strain-derived interactions with other defects and the concomitant nucleation of intrinsic defects, which weave a web of randomly distributed nanostrained regions that profoundly transform the vortex-pinning landscape of the YBCO nanocomposite thin films.

Transfer of monolayer TMD WS2 and Raman study of substrate effects

PubMed Central

Mlack, Jerome T.; Masih Das, Paul; Danda, Gopinath; Chou, Yung-Chien; Naylor, Carl H.; Lin, Zhong; López, Néstor Perea; Zhang, Tianyi; Terrones, Mauricio; Johnson, A. T. Charlie; Drndić, Marija

2017-01-01

A facile transfer process for transition metal dichalcogenide WS2 flakes is reported and the effect of the underlying substrate on the flake properties is investigated using Raman spectroscopy. The flakes are transferred from their growth substrate using polymethyl methacrylate (PMMA) and a wet etch to allow the user to transfer the flakes to a final substrate using a microscope and micromanipulator combined with semi-transparent Kapton tape. The substrates used range from insulators such as industry standard high-k dielectric HfO2 and “green polymer” parylene-C, to conducting chemical vapor deposition (CVD) grown graphene. Raman spectroscopy is used first to confirm the material quality of the transferred flakes to the substrates and subsequently to analyze and separate the effects arising from material transfer from those arising from interactions with the substrate. We observe changes in the Raman spectra associated with the interactions between the substrates in the flakes. These interactions affect both in-plane and out-of-plane modes in different ways depending on their sources, for example strain or surface charge. These changes vary with final substrate, with the strongest effects being observed for WS2 transferred onto graphene and HfO2, demonstrating the importance of understanding substrate interaction for fabrication of future devices. PMID:28220852

Investigation of multi-state charge-storage properties of redox-active organic molecules in silicon-molecular hybrid devices for DRAM and Flash applications

NASA Astrophysics Data System (ADS)

Gowda, Srivardhan Shivappa

Molecular electronics has recently spawned a considerable amount of interest with several molecules possessing charge-conduction and charge-storage properties proposed for use in electronic devices. Hybrid silicon-molecular technology has the promise of augmenting the current silicon technology and provide for a transitional path to future molecule-only technology. The focus of this dissertation work has been on developing a class of hybrid silicon-molecular electronic devices for DRAM and Flash memory applications utilizing redox-active molecules. This work exploits the ability of molecules to store charges with single-electron precision at room temperature. The hybrid devices are fabricated by forming self-assembled monolayers of redox-active molecules on Si and oxide (SiO2 and HfO2) surfaces via formation of covalent linkages. The molecules possess discrete quantum states from which electrons can tunnel to the Si substrate at discrete applied voltages (oxidation process, cell write), leaving behind a positively charged layer of molecules. The reduction (erase) process, which is the process of electrons tunneling back from Si to the molecules, neutralizes the positively charged molecular monolayer. Hybrid silicon-molecular capacitor test structures were electrically characterized with an electrolyte gate using cyclic voltammetry (CyV) and impedance spectroscopy (CV) techniques. The redox voltages, kinetics (write/erase speeds) and charge-retention characteristics were found to be strongly dependent on the Si doping type and densities, and ambient light. It was also determined that the redox energy states in the molecules communicate with the valence band of the Si substrate. This allows tuning of write and read states by modulating minority carriers in n- and p-Si substrates. Ultra-thin dielectric tunnel barriers (SiO2, HfO2) were placed between the molecules and the Si substrate to augment charge-retention for Flash memory applications. The redox response was studied as a function of tunnel oxide thickness, dielectric permittivity and energy barrier, and modified Butler-Volmer expressions were postulated to describe the redox kinetics. The speed vs. retention performance of the devices was improved via asymmetric layered tunnel barriers. The properties of molecules can be tailored by molecular design and synthetic chemistry. In this work, it was demonstrated that an alternate route to tune/enhance the properties of the hybrid device is to engineer the substrate (silicon) component. The molecules were attached to diode surfaces to tune redox voltages and improve charge-retention characteristics. N+ pockets embedded in P-Si well were utilized to obtain multiple states from a two-state molecule. The structure was also employed as a characterization tool in investigating the intrinsic properties of the molecules such as lateral conductivity within the monolayer. Redox molecules were also incorporated on an ultra thin gate-oxide of Si MOSFETs with the intent of studying the interaction of redox states with Si MOSFETs. The discrete molecular states were manifested in the drain current and threshold voltage characteristics of the device. This work demonstrates the multi-state modulation of Si-MOSFETs' drain current via redox-active molecular monolayers. Polymeric films of redox-active molecules were incorporated to improve the charge-density (ON/OFF ratio) and these structures may be employed for multi-state, low-voltage Flash memory applications. The most critical aspect of this research effort is to build a reliable and high density solid state memory technology. To this end, efforts were directed towards replacement of the electrolytic gate, which forms an extremely thin insulating double layer (˜10 nm) at the electrolyte-molecule interface, with a combination of an ultra-thin high-K dielectric layer and a metal gate. Several interesting observations were made in the research approaches towards integration and provided valuable insights into the electrolyte-redox systems. In summary, this work provides fundamental insights into the interaction of redox-energy states with silicon substrate and realistic approaches for exploiting the unique properties of the molecules that may enable solutions for nanoscale high density, low-voltage, long retention and multiple bit memory applications.

78 FR 62451 - Air Quality: Revision to Definition of Volatile Organic Compounds-Exclusion of 2,3,3,3...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-10-22

... List HFO-1234yf as an Exempt Compound C. Contribution to Tropospheric Ozone D. Health and Environmental... Health and Safety Risks H. Executive Order 13211: Actions That Significantly Affect Energy Supply... presence of sunlight. Because of the harmful health effects of ozone, the EPA and state governments limit...

Silk fibroin/chitosan thin film promotes osteogenic and adipogenic differentiation of rat bone marrow-derived mesenchymal stem cells.

PubMed

Li, Da-Wei; He, Jin; He, Feng-Li; Liu, Ya-Li; Liu, Yang-Yang; Ye, Ya-Jing; Deng, Xudong; Yin, Da-Chuan

2018-04-01

As a biodegradable polymer thin film, silk fibroin/chitosan composite film overcomes the defects of pure silk fibroin and chitosan films, respectively, and shows remarkable biocompatibility, appropriate hydrophilicity and mechanical properties. Silk fibroin/chitosan thin film can be used not only as metal implant coating for bone injury repair, but also as tissue engineering scaffold for skin, cornea, adipose, and other soft tissue injury repair. However, the biocompatibility of silk fibroin/chitosan thin film for mesenchymal stem cells, a kind of important seed cell of tissue engineering and regenerative medicine, is rarely reported. In this study, silk fibroin/chitosan film was prepared by solvent casting method, and the rat bone marrow-derived mesenchymal stem cells were cultured on the silk fibroin/chitosan thin film. Osteogenic and adipogenic differentiation of rat bone marrow-derived mesenchymal stem cells were induced, respectively. The proliferation ability, osteogenic and adipogenic differentiation abilities of rat bone marrow-derived mesenchymal stem cells were systematically compared between silk fibroin/chitosan thin film and polystyrene tissue culture plates. The results showed that silk fibroin/chitosan thin film not only provided a comparable environment for the growth and proliferation of rat bone marrow-derived mesenchymal stem cells but also promoted their osteogenic and adipogenic differentiation. This work provided information of rat bone marrow-derived mesenchymal stem cells behavior on silk fibroin/chitosan thin film and extended the application of silk fibroin/chitosan thin film. Based on the results, we suggested that the silk fibroin/chitosan thin film could be a promising material for tissue engineering of bone, cartilage, adipose, and skin.

Ultrafast two-photon absorption generated free-carrier modulation in a silicon nanoplasmonic resonator

NASA Astrophysics Data System (ADS)

Nielsen, M. P.; Elezzabi, A. Y.

2014-03-01

Ultrafast all-optical modulation in Ag/HfO2/Si/HfO2/Ag metal-insulator-semiconductor-insulator-metal (MISIM) nanoring resonators through two-photon absorption photogenerated free-carriers is studied using self-consistent 3-D finite difference time domain (FDTD) simulations. The self-consistent FDTD simulations incorporate the two-photon absorption, free carrier absorption, and plasma dispersion effects in silicon. The nanorings are aperture coupled to Ag/HfO2/Si(100nm)/HfO2/Ag MISIM waveguides by 300nm wide and 50nm deep apertures. The effects of pump pulse energy, HfO2 spacer thickness, and device footprint on the modulation characteristics are studied. Nanoring radius is varied between 540nm and 1μm, the HfO2 spacer thickness is varied between 10nm and 20nm, and the pump pulse energy is explored up to 60pJ. Modulation amplitude, switching time, average generated carrier density, and wavelength resonant shift is studied for each of the device configurations. In a compact device footprint of only 1.4μm2, a 13.1dB modulation amplitude was obtained with a switching time of only 2ps using a modest pump pulse energy of 16.0pJ. The larger bandwidth associated with more compact nanorings and thinner spacer layers is shown to result in increased modulation amplitude.

Effect of annealing on structural changes and oxygen diffusion in amorphous HfO2 using classical molecular dynamics

NASA Astrophysics Data System (ADS)

Shen, Wenqing; Kumari, Niru; Gibson, Gary; Jeon, Yoocharn; Henze, Dick; Silverthorn, Sarah; Bash, Cullen; Kumar, Satish

2018-02-01

Non-volatile memory is a promising alternative to present memory technologies. Oxygen vacancy diffusion has been widely accepted as one of the reasons for the resistive switching mechanism of transition-metal-oxide based resistive random access memory. In this study, molecular dynamics simulation is applied to investigate the diffusion coefficient and activation energy of oxygen in amorphous hafnia. Two sets of empirical potential, Charge-Optimized Many-Body (COMB) and Morse-BKS (MBKS), were considered to investigate the structural and diffusion properties at different temperatures. COMB predicts the activation energy of 0.53 eV for the temperature range of 1000-2000 K, while MBKS predicts 2.2 eV at high temperature (1600-2000 K) and 0.36 eV at low temperature (1000-1600 K). Structural changes and appearance of nano-crystalline phases with increasing temperature might affect the activation energy of oxygen diffusion predicted by MBKS, which is evident from the change in coordination number distribution and radial distribution function. None of the potentials make predictions that are fully consistent with density functional theory simulations of both the structure and diffusion properties of HfO2. This suggests the necessity of developing a better multi-body potential that considers charge exchange.

Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chen, Hua-Mao; Tseng, Tseung-Yuen; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung

2013-09-01

This work investigates the channel hot carrier (CHC) effect in HfO2/Ti1-xNx p-channel metal oxide semiconductor field effect transistors (p-MOSFETs). Generally, the subthreshold swing (S.S.) should increase during CHC stress (CHCS), since interface states will be generated near the drain side under high electric field due to drain voltage (Vd). However, our experimental data indicate that S.S. has no evident change under CHCS, but threshold voltage (Vth) shifts positively. This result can be attributed to hot carrier injected into high-k dielectric near the drain side. Meanwhile, it is surprising that such Vth degradation is not observed in the saturation region during stress. Therefore, drain-induced-barrier-lowering (DIBL) as a result of CHC-induced electron trapping is proposed to explain the different Vth behaviors in the linear and saturation regions. Additionally, the influence of different nitrogen concentrations in HfO2/Ti1-xNx p-MOSFETs on CHCS is also investigated in this work. Since nitrogen diffuses to SiO2/Si interface induced pre-Nit occurring to degrades channel mobility during the annealing process, a device with more nitrogen shows slightly less impact ionization, leading to insignificant charge trapping-induced DIBL behavior.

Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor

NASA Astrophysics Data System (ADS)

Deshpande, Anand; Inman, Ronald; Jursich, Gregory; Takoudis, Christos

2004-09-01

In this work thin films of hafnium oxide are deposited on Si(100) substrates by means of atomic layer deposition (ALD) using tetrakis(diethylamino)hafnium and water vapor at substrate temperatures of 250-350ºC. Our system capabilities include fast transient delivery of reactive fluids, real-time vapor phase detection (in situ tunable diode laser hygrometer), precursor thermochemical capabilities, and ppt level elemental analysis by inductive coupling plasma mass spectrometry. The composition, purity, and other properties of the films and resulting interfaces are determined using x-ray and Fourier transform infrared spectroscopies, Z-contrast imaging and electron energy loss spectroscopy in a scanning transmission electron microscope with A˚ scale resolution, and spectroscopic ellipsometry. The observed ALD rate is ~1.4 A˚ per cycle. The nonuniformity across the film is less than 4%. Negligible carbon contamination is found in the resulting stoichiometric films under all conditions studied. The pulse sequence was optimized to prevent disastrous particulate problems while still minimizing purge times. The film deposition is investigated as a function of substrate temperature and reagent pulsing characteristics. A mild inverse temperature dependence of the ALD rate is observed. The initial stage of the HfO2 growth is investigated in detail.

Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

NASA Astrophysics Data System (ADS)

Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

2018-01-01

We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area.

PubMed

Yoon, Jung Ho; Yoo, Sijung; Song, Seul Ji; Yoon, Kyung Jean; Kwon, Dae Eun; Kwon, Young Jae; Park, Tae Hyung; Kim, Hye Jin; Shao, Xing Long; Kim, Yumin; Hwang, Cheol Seong

2016-07-20

To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) performance and an electroforming-free, self-rectifying, low-power-consumption, multilevel-switching, and easy fabrication process with a deep sub-μm(2) cell area. In this work, a Pt/Ta2O5/HfO2-x/TiN RS memory cell fabricated in the form of a vertical-type structure was presented as a feasible contender to meet the above requirements. While the fundamental RS characteristics of this material based on the electron trapping/detrapping mechanisms have been reported elsewhere, the influence of the cell scaling size to 0.34 μm(2) on the RS performance by adopting the vertical integration scheme was carefully examined in this work. The smaller cell area provided much better switching uniformity while all the other benefits of this specific material system were preserved. Using the overstressing technique, the nature of RS through the localized conducting path was further examined, which elucidated the fundamental difference between the present material system and the general ionic-motion-related bipolar RS mechanism.

Products Derived from Thinning Two Hardwood Timber Stands in the Appalachians

Treesearch

E. Paul Craft; John E. Baumgras

1978-01-01

Two sample plots in poletimber-small sawtimber stands of Allegheny hardwoods were thinned to improve crop-tree spacing. Thinning produced nearly 35 tons per acre of wood fiber, including 13 tons of sawable boltwood, 3-l/2 tons of standard sawlogs, 18 tons of pulpwood, and 1 ton of fuelwood. Nearly 3,700 board feet of lumber and cants were produced from the sawbolts and...

Effects of Coating Materials and Mineral Additives on Nitrate Reduction by Zerovalent Iron

NASA Astrophysics Data System (ADS)

Kim, K. H.; Jeong, H. Y.; Lee, S.; Kang, N.; Choi, H. J.; Park, M.

2015-12-01

In efforts to facilitate nitrate removal, a variety of coating materials and mineral additives were assessed for their effects on the nitrate reduction by zerovalent iron (ZVI). Coated ZVIs were prepared by reacting Fe particles with Cr(III), Co(II), Ni(II), Cu(II), and S(-II) solutions under anoxic conditions, with the resultant materials named Cr/Fe, Co/Fe, Ni/Fe, Cu/Fe, and FeS/Fe, respectively. The mineral additives used, synthesized or purchased, included goethite, magnetite, and hydrous ferric oxide (HFO). Kinetic experiments were performed using air-tight serum vials containing 1.0 g Fe (uncoated or coated forms) in 15 mL of 100 mg NO3×N/L solutions with pH buffered at 7.0. To monitor the reaction progress, the solution phase was analyzed for NO3-, NO2-, and NH4+ on an ion chromatography, while the headspace was analyzed for H2, N2, and O2 on a gas chromatography. By uncoated Fe, ca. 60% of nitrate was reductively transformed for 3.6 h, with NH4+ being the predominant product. Compared with uncoated one, Cr/Fe, Co/Fe, and Cu/Fe showed faster removal rates of nitrate. The observed reactivity enhancement was thought to result from additional reduction of nitrate by H atoms adsorbed on the surface of Cr, Co, or Cu metal. In contrast, both Ni/Fe and FeS/Fe showed slower removal of nitrate than uncoated Fe. In both cases, the coating, which highly disfavors the adsorption of nitrate, would form on the Fe surface. When goethite, HFO, and magnetite were amended, the nitrate reduction by Fe was significantly increased, with the effect being most evident with HFO. Although not capable of reducing nitrate, the mineral additives would serve as crystal nuclei for the corrosion products of Fe, thus making the development of passivation layers on the Fe surface less. In the future, we will perform a kinetic modeling of the experimental data to assess the relative contribution of multiple reaction paths in the nitrate reduction by Fe.

Hydrochemical study of an arsenic-contaminated plain in Guandu, north Taiwan

NASA Astrophysics Data System (ADS)

Hsiao, Yu-Hsiang

2015-04-01

Arsenic pollution in Guandu Plain, north Taiwan is a critical issue due to highly developed anthropogenic activities. It was considered that arsenic was carried in by surface water system. Two major rivers, Huanggang Creek and South Huang Greek, flow through Guandu Plain. Both creeks originate from Tatung Volcano Group, which is extensively active in post-volcanic activities. In this study, the hydrochemistry along the two major rivers was studied for tracing the source of arsenic pollution in Guandu Plain. The pH values in the upstream water are in the range from 6 to 8 but dramatically decrease down to 2-4.5 in the downstream area. It can be concluded that the creeks are recharged with very low pH geothermal water. In addition, arsenic shows a different spatial distribution. In Huanggang Creek, arsenic concentration is much higher, about 200 ppb to 500 ppb, in the downstream than in the upstream while arsenic concentration is extremely low, below 1 ppb, in the downstream of South Huang Greek. The geochemical results show that rare earth elements (REEs) are depleted in the upstream both in Huanggang creek and South Huang creek, and the NASC-normalized ratios of heavy to light REE (Lu/La) in the upstream are very close to 1. This demonstrates that the upstream water is geochemically dominated by the interaction between water and sedimentary rock. In the downstream, the NASC-normalized REE pattern shows a quit different type which is depleted in light REEs (much higher Lu/La ratio). It is well known that igneous rock is depleted in light REEs; therefore, arsenic is possibly volcanic origin. In this study, PHREEQC, a thermodynamic modeling program, was also utilized to calculate the saturation index (SI) of hydrous ferric oxide (HFO), which can effectively scavenge arsenic in water. The results demonstrate that SI of HFO is mainly controlled by pH in this study. When pH is greater than 3.5, HFO start to precipitate and remove arsenic from water. Therefore, it is believed that the arsenic pollution in Guandu Plain could result from HFO co-precipitation due to the increase of pH when Huanggang creek and South Huang creek flow through the land.

Calcium-Magnesium-Aluminosilicate (CMAS) Reactions and Degradation Mechanisms of Advanced Environmental Barrier Coatings

NASA Technical Reports Server (NTRS)

Ahlborg, Nadia L.; Zhu, Dongming

2013-01-01

The thermochemical reactions between calcium-magnesium-aluminosilicate- (CMAS-) based road sand and several advanced turbine engine environmental barrier coating (EBC) materials were studied. The phase stability, reaction kinetics and degradation mechanisms of rare earth (RE)-silicates Yb2SiO5, Y2Si2O7, and RE-oxide doped HfO2 and ZrO2 under the CMAS infiltration condition at 1500 C were investigated, and the microstructure and phase characteristics of CMAS-EBC specimens were examined using Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Experimental results showed that the CMAS dissolved RE-silicates to form crystalline, highly non-stoichiometric apatite phases, and in particular attacking the silicate grain boundaries. Cross-section images show that the CMAS reacted with specimens and deeply penetrated into the EBC grain boundaries and formed extensive low-melting eutectic phases, causing grain boundary recession with increasing testing time in the silicate materials. The preliminary results also showed that CMAS reactions also formed low melting grain boundary phases in the higher concentration RE-oxide doped HfO2 systems. The effect of the test temperature on CMAS reactions of the EBC materials will also be discussed. The faster diffusion exhibited by apatite and RE-doped oxide phases and the formation of extensive grain boundary low-melting phases may limit the CMAS resistance of some of the environmental barrier coatings at high temperatures.

Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack

NASA Astrophysics Data System (ADS)

Bhuyian, M. N.; Sengupta, R.; Vurikiti, P.; Misra, D.

2016-05-01

This work evaluates the defects in high quality atomic layer deposited (ALD) HfAlOx with extremely low Al (<3% Al/(Al + Hf)) incorporation in the Hf based high-k dielectrics. The defect activation energy estimated by the high temperature current voltage measurement shows that the charged oxygen vacancies, V+/V2+, are the primary source of defects in these dielectrics. When Al is added in HfO2, the V+ type defects with a defect activation energy of Ea ˜ 0.2 eV modify to V2+ type to Ea ˜ 0.1 eV with reference to the Si conduction band. When devices were stressed in the gate injection mode for 1000 s, more V+ type defects are generated and Ea reverts back to ˜0.2 eV. Since Al has a less number of valence electrons than do Hf, the change in the co-ordination number due to Al incorporation seems to contribute to the defect level modifications. Additionally, the stress induced leakage current behavior observed at 20 °C and at 125 °C demonstrates that the addition of Al in HfO2 contributed to suppressed trap generation process. This further supports the defect engineering model as reduced flat-band voltage shifts were observed at 20 °C and at 125 °C.

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

PubMed

Bai, Jingwei; Liao, Lei; Zhou, Hailong; Cheng, Rui; Liu, Lixin; Huang, Yu; Duan, Xiangfeng

2011-06-08

Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO(2)) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 μm to 100 nm show that complete current saturation can be achieved in 5.6 μm devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO(2) gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 μS/μm reported in CVD graphene to date.

Environmental Stability and Oxidation Behavior of HfO2-Si and YbGd(O) Based Environmental Barrier Coating Systems for SiCSiC Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Zhu, Dongming; Farmer, Serene; McCue, Terry R.; Harder, Bryan; Hurst, Janet B.

2017-01-01

Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, environmental durable environmental barrier coating systems. In this paper, the durability and performance of advanced Electron Beam-Physical Vapor Deposition (EB-PVD) NASA HfO2-Si and YbGdSi(O) EBC bond coat top coat systems for SiCSiC CMC have been summarized. The high temperature thermomechanical creep, fatigue and oxidation resistance have been investigated in the laboratory simulated high-heat-flux environmental test conditions. The advanced NASA EBC systems showed promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

Fate of low arsenic concentrations during full-scale aeration and rapid filtration.

PubMed

Gude, J C J; Rietveld, L C; van Halem, D

2016-01-01

In the Netherlands, groundwater treatment commonly consists of aeration, with subsequent sand filtration without using chemical oxidants like chlorine. With arsenic (As) concentrations well below the actual guidelines of 10 μg As/L, groundwater treatment plants have been exclusively designed for the removal of iron (Fe), manganese and ammonium. The aim of this study was to investigate the As removal capacity at three of these groundwater treatment plants (10-26 μg As/L) in order to identify operational parameters that can contribute to lowering the filtrate As concentration to <1 μg/L. For this purpose a sampling campaign and experiments with supernatant water and hydrous ferric oxide (HFO) flocs were executed to identify the key mechanisms controlling As removal. Results showed that after aeration, As largely remained mobile in the supernatant water; even during extended residence times only 20-48% removal was achieved (with 1.4-4.2 mg/L precipitated Fe(II)). Speciation showed that the mobile As was in the reduced As(III) form, whereas, As(V) was readily adsorbed to the formed HFO flocs. In the filter bed, the remaining As(III) completely oxidized within 2 min of residence time and As removal efficiencies increased to 48-90%. Filter grain coating analysis showed the presence of manganese at all three treatment plants. It is hypothesized that these manganese oxides are responsible for the accelerated As(III) oxidation in the filter bed, leading to an increased removal capacity. In addition, pH adjustment from 7.8 to 7.0 has been found to improve the capacity for As(V) uptake by the HFO flocs in the filter bed. The overall conclusion is, that during groundwater treatment, the filter bed is crucial for rapid As(III) removal, indicating the importance to control the oxidation sequence of Fe and As for improved As removal efficiencies. Copyright © 2015 Elsevier Ltd. All rights reserved.

Relationship between effective mobility and border traps associated with charge trapping in In0.7Ga0.3As MOSFETs with various high-κ stacks

NASA Astrophysics Data System (ADS)

Kwon, Hyuk-Min; Kim, Dae-Hyun; Kim, Tae-Woo

2018-03-01

The effective mobility and reliability characteristics of In0.7Ga0.3As quantum-well (QW) MOSFETs with various high-κ gate stacks and HEMTs with a Schottky gate under bias temperature instability (BTI) stress were investigated. The effective mobilities (μeff) of HEMTs, single-layer Al2O3, bilayer Al2O3 (0.6 nm)/HfO2 (2.0 nm), and Al2O3 (0.6 nm)/HfO2 (3.0 nm) were ˜9000, ˜6158, ˜4789, and ˜4447 cm2 V-1 s-1 at N inv = 1.5 × 1012/cm2, respectively. The maximum effective mobility of In0.7Ga0.3As channel MOSFETs was compared with that of In0.7Ga0.3As/In0.48Al0.52As HEMTs, which are interface and border trap-free FETs. The results showed that the effective channel mobility was sensitive to traps in high-κ dielectrics related to interface trap density and border traps in the oxide. The ΔV T degradation of the bilayer Al2O3/HfO2 under BTI stress was greater than that of a single Al2O3 layer because the HfO2 layer had a high density of oxygen vacancies which were related to border traps.

Spatial resolution in thin film deposition on silicon surfaces by combining silylation and UV/ozonolysis

NASA Astrophysics Data System (ADS)

Guo, Lei; Zaera, Francisco

2014-12-01

A simple procedure has been developed for the processing of silicon wafers in order to facilitate the spatially resolved growth of thin solid films on their surfaces. Specifically, a combination of silylation and UV/ozonolysis was tested as a way to control the concentration of the surface hydroxo groups required for subsequent atomic layer deposition (ALD) of metals or oxides. Water contact angle measurements were used to evaluate the hydrophilicity/hydrophobicity of the surface, a proxy for OH surface coverage, and to optimize the UV/ozonolysis treatment. Silylation with hexamethyldisilazane, trichloro(octadecyl)silane, or trimethylchlorosilane was found to be an efficient way to block the hydroxo sites and to passivate the underlying surface, and UV/O3 treatments were shown to effectively remove the silylation layer and to regain the surface reactivity. Both O3 and 185 nm UV radiation were determined necessary for the removal of the silylation layer, and additional 254 nm radiation was found to enhance the process. Attenuated total reflection-infrared absorption spectroscopy was employed to assess the success of the silylation and UV/O3 removal steps, and atomic force microscopy data provided evidence for the retention of the original smoothness of the surface. Selective growth of HfO2 films via TDMAHf + H2O ALD was seen only on the UV/O3 treated surfaces; total inhibition of the deposition was observed on the untreated silylated surfaces (as determined by x-ray photoelectron spectroscopy and ellipsometry). Residual film growth was still detected on the latter if the ALD was carried out at high temperatures (250 °C), because the silylation layer deteriorates under such harsh conditions and forms surface defects that act as nucleation sites for the growth of oxide grains (as identified by electron microscopy and scanning electron microscopy). We believe that the silylation-UV/O3 procedure advanced here could be easily implemented for the patterning of surfaces in many microelectronic applications.

Repair of a Mirror Coating on a Large Optic for High Laser Damage Applications using Ion Milling and Over-Coating Methods.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Field, Ella Suzanne; Bellum, John Curtis; Kletecka, Damon E.

When an optical coating is damaged, deposited incorrectly, or is otherwise unsuitable, the conventional method to restore the optic often entails repolishing the optic surface, which can incur a large cost and long lead time. We propose three alternative options to repolishing, including (i) burying the unsuitable coating under another optical coating, (ii) using ion milling to etch the unsuitable coating completely from the optic surface, and then recoating the optic, and (iii) using ion milling to etch through a number of unsuitable layers, leaving the rest of the coating intact, and then recoating the layers that were etched. Repairsmore » were made on test optics with dielectric mirror coatings according to the above three options. The mirror coatings to be repaired were quarter wave stacks of HfO 2 and SiO 2 layers for high reflection at 1054 nm at 45° incidence in P-polarization. One of the coating layers was purposely deposited incorrectly as Hf metal instead of HfO 2 to evaluate the ability of each repair method to restore the coating’s high laser-induced damage threshold (LIDT) of 64.0 J/cm 2. Finally, the repaired coating with the highest resistance to laser-induced damage was achieved using repair method (ii) with an LIDT of 49.0 – 61.0 J/cm 2.« less

Repair of a mirror coating on a large optic for high laser damage applications using ion milling and over-coating methods

NASA Astrophysics Data System (ADS)

Field, Ella S.; Bellum, John C.; Kletecka, Damon E.

2017-01-01

When an optical coating is damaged, deposited incorrectly, or is otherwise unsuitable, the conventional method to restore the optic often entails repolishing the optic surface, which can incur a large cost and long lead time. We propose three alternative options to repolishing, including (i) burying the unsuitable coating under another optical coating, (ii) using ion milling to etch the unsuitable coating completely from the optic surface and then recoating the optic, and (iii) using ion milling to etch through a number of unsuitable layers, leaving the rest of the coating intact, and then recoating the layers that were etched. Repairs were made on test optics with dielectric mirror coatings according to the above three options. The mirror coatings to be repaired were quarter wave stacks of HfO2 and SiO2 layers for high reflection at 1054 nm at 45 deg incidence in P-polarization. One of the coating layers was purposely deposited incorrectly as Hf metal instead of HfO2 to evaluate the ability of each repair method to restore the coating's high laser-induced damage threshold (LIDT) of 64.0 J/cm2. The repaired coating with the highest resistance to laser-induced damage was achieved using repair method (ii) with an LIDT of 49.0 to 61.0 J/cm2.

Repair of a mirror coating on a large optic for high laser damage applications using ion milling and over-coating methods

DOE PAGES

Field, Ella S.; Bellum, John C.; Kletecka, Damon E.

2016-07-08

Here, when an optical coating is damaged, deposited incorrectly, or is otherwise unsuitable, the conventional method to restore the optic often entails repolishing the optic surface, which can incur a large cost and long lead time. We propose three alternative options to repolishing, including (i) burying the unsuitable coating under another optical coating, (ii) using ion milling to etch the unsuitable coating completely from the optic surface and then recoating the optic, and (iii) using ion milling to etch through a number of unsuitable layers, leaving the rest of the coating intact, and then recoating the layers that were etched.more » Repairs were made on test optics with dielectric mirror coatings according to the above three options. The mirror coatings to be repaired were quarter wave stacks of HfO 2 and SiO 2 layers for high reflection at 1054 nm at 45 deg incidence in P-polarization. One of the coating layers was purposely deposited incorrectly as Hf metal instead of HfO2 to evaluate the ability of each repair method to restore the coating’s high laser-induced damage threshold (LIDT) of 64.0 J/cm 2. The repaired coating with the highest resistance to laser-induced damage was achieved using repair method (ii) with an LIDT of 49.0 to 61.0 J/cm 2.« less

Repair of a Mirror Coating on a Large Optic for High Laser Damage Applications using Ion Milling and Over-Coating Methods.

DOE PAGES

Field, Ella Suzanne; Bellum, John Curtis; Kletecka, Damon E.

2016-06-01

When an optical coating is damaged, deposited incorrectly, or is otherwise unsuitable, the conventional method to restore the optic often entails repolishing the optic surface, which can incur a large cost and long lead time. We propose three alternative options to repolishing, including (i) burying the unsuitable coating under another optical coating, (ii) using ion milling to etch the unsuitable coating completely from the optic surface, and then recoating the optic, and (iii) using ion milling to etch through a number of unsuitable layers, leaving the rest of the coating intact, and then recoating the layers that were etched. Repairsmore » were made on test optics with dielectric mirror coatings according to the above three options. The mirror coatings to be repaired were quarter wave stacks of HfO 2 and SiO 2 layers for high reflection at 1054 nm at 45° incidence in P-polarization. One of the coating layers was purposely deposited incorrectly as Hf metal instead of HfO 2 to evaluate the ability of each repair method to restore the coating’s high laser-induced damage threshold (LIDT) of 64.0 J/cm 2. Finally, the repaired coating with the highest resistance to laser-induced damage was achieved using repair method (ii) with an LIDT of 49.0 – 61.0 J/cm 2.« less

Repair of a mirror coating on a large optic for high laser damage applications using ion milling and over-coating methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Field, Ella S.; Bellum, John C.; Kletecka, Damon E.

Here, when an optical coating is damaged, deposited incorrectly, or is otherwise unsuitable, the conventional method to restore the optic often entails repolishing the optic surface, which can incur a large cost and long lead time. We propose three alternative options to repolishing, including (i) burying the unsuitable coating under another optical coating, (ii) using ion milling to etch the unsuitable coating completely from the optic surface and then recoating the optic, and (iii) using ion milling to etch through a number of unsuitable layers, leaving the rest of the coating intact, and then recoating the layers that were etched.more » Repairs were made on test optics with dielectric mirror coatings according to the above three options. The mirror coatings to be repaired were quarter wave stacks of HfO 2 and SiO 2 layers for high reflection at 1054 nm at 45 deg incidence in P-polarization. One of the coating layers was purposely deposited incorrectly as Hf metal instead of HfO2 to evaluate the ability of each repair method to restore the coating’s high laser-induced damage threshold (LIDT) of 64.0 J/cm 2. The repaired coating with the highest resistance to laser-induced damage was achieved using repair method (ii) with an LIDT of 49.0 to 61.0 J/cm 2.« less

InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

NASA Astrophysics Data System (ADS)

Alhashim, Hala H.; Khan, Mohammed Zahed Mustafa; Majid, Mohammed A.; Ng, Tien K.; Ooi, Boon S.

2015-10-01

We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO2 and Si3N4 films, HfO2 and SrTiO3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175 nm (>148 meV) is obtained for HfO2 capped sample. Likewise, investigation of TiO2, Al2O3, and ZnO capping films showed unusual characteristics, such as intermixing-control caps at low annealing temperature (650°C) and interdiffusion-promoting caps at high temperatures (≥675°C). We qualitatively compared the degree of intermixing induced by these films by extracting the rate of intermixing and the temperature for ground-state and excited-state convergences. Based on our systematic characterization, we established reference intermixing processes based on seven different dielectric encapsulation materials. The tailored wavelength emission of ˜1060-1200 nm at room temperature and improved optical quality exhibited from intermixed QDs would serve as key materials for eventual realization of low-cost, compact, and agile lasers. Applications include solid-state laser pumping, optical communications, gas sensing, biomedical imaging, green-yellow-orange coherent light generation, as well as addressing photonic integration via area-selective, and postgrowth bandgap engineering.

Geochronology and petrogenesis of the Qibaoshan Cu-polymetallic deposit, northeastern Hunan Province: Implications for the metal source and metallogenic evolution of the intracontinental Qinhang Cu-polymetallic belt, South China

NASA Astrophysics Data System (ADS)

Yuan, Shunda; Mao, Jingwen; Zhao, Panlao; Yuan, Yabin

2018-03-01

The recently recognized Qinhang metallogenic belt (QHMB) is an economically important intracontinental Mesozoic porphyry-skarn Cu-polymetallic metallogenic belt in South China. However, the origin of the ore-bearing magma and the major factors controlling the different metal assemblages in the QHMB are still unclear. The Qibaoshan deposit is a large Cu-Au-Pb-Zn-Ag-Fe deposit located at the juncture between the northern and central parts of the QHMB. In this study, new zircon U-Pb ages, Hf-O isotopic data, molybdenite Re-Os ages, and whole-rock geochemical data are combined to constrain the timing of the mineralization and the origin and petrogenesis of the ore-bearing porphyry in the Qibaoshan deposit. The ages obtained from both zircon U-Pb and molybdenite Re-Os dating fall in the Late Jurassic (between 152.7 and 148.3 Ma), revealing that this deposit is significantly younger than previously estimated (227-184 Ma). The Qibaoshan ore-bearing quartz porphyry shows variable negative zircon εHf(t) values (-14.8 to -5.5), high δ18O values (8.4 to 10.8‰), and high Mg# values (69.1 to 73.0), indicating that it formed via the partial melting of ancient crust triggered by the injection of mantle-derived magma. Zircon Hf-O isotopic modeling of the mixing of two extreme endmembers indicates that the magmatic source comprised 70-80% reworked ancient crustal components and 20-30% depleted mantle components. Based on comparisons with other ore-bearing porphyries in the QHMB, a magmatic source dominated by crust-derived material and relatively low oxygen fugacities (ΔFMQ -1.8 to ΔFMQ +0.8) was responsible for the high (Pb + Zn)/Cu ratio in the Qibaoshan deposit, and the Pb, Zn and Ag were mainly derived from the reworked ancient crust. Although four analyses of inherited Neoproterozoic zircons ( 800 Ma) have variable positive εHf(t) values (0.72 to 11.21), indicating that Neoproterozoic juvenile crust was involved in the formation of the Qibaoshan ore-bearing quartz porphyry, the relatively low oxygen fugacities (ΔFMQ -1.2 to ΔFMQ +0.4) of the parent magma of these inherited zircons suggest that this parent magma could not have provided significant metallic Cu for mineralization in the Qibaoshan Cu-polymetallic deposit. Therefore, the metallic Cu in the Qibaoshan Cu-polymetallic deposit was probably provided by the injection of the mantle-derived magma. Because ore-forming magmas with relatively low oxygen fugacities have low Au solubility, the large Au mineralization in the Qibaoshan deposit may be related to high background values of Au in this area. Our data, integrated with regional petrogeochemical data, indicate that the magmatic source exerted a first-order control on the different metal assemblages in the deposits in the QHMB.

Nano-scale zirconia and hafnia dielectrics grown by atomic layer deposition: Crystallinity, interface structures and electrical properties

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub

With the continued scaling of transistors, leakage current densities across the SiO2 gate dielectric have increased enormously through direct tunneling. Presently, metal oxides having higher dielectric constants than SiO2 are being investigated to reduce the leakage current by increasing the physical thickness of the dielectric. Many possible techniques exist for depositing high-kappa gate dielectrics. Atomic layer deposition (ALD) has drawn attention as a method for preparing ultrathin metal oxide layers with excellent electrical characteristics and near-perfect film conformality due to the layer-by-layer nature of the deposition mechanism. For this research, an ALD system using ZrCl4/HfCl4 and H2O was built and optimized. The microstructural and electrical properties of ALD-ZrO2 and HfO2 grown on SiO2/Si substrates were investigated and compared using various characterization tools. In particular, the crystallization kinetics of amorphous ALD-HfO2 films were studied using in-situ annealing experiments in a TEM. The effect of crystallization on the electrical properties of ALD-HfO 2 was also investigated using various in-situ and ex-situ post-deposition anneals. Our results revealed that crystallization had little effect on the magnitude of the gate leakage current or on the conduction mechanisms. Building upon the results for each metal oxide separately, more advanced investigations were made. Several nanolaminate structures using ZrO2 and HfO2 with different sequences and layer thicknesses were characterized. The effects of the starting microstructure on the microstructural evolution of nanolaminate stacks were studied. Additionally, a promising new approach for engineering the thickness of the SiO2-based interface layer between the metal oxide and silicon substrate after deposition of the metal oxide layer was suggested. Through experimental measurements and thermodynamic analysis, it is shown that a Ti overlayer, which exhibits a high oxygen solubility, can effectively getter oxygen from the interface layer, thus decomposing SiO2 and reducing the interface layer thickness in a controllable fashion. As one of several possible applications, ALD-ZrO2 and HfO 2 gate dielectric films were deposited on Ge (001) substrates with different surface passivations. After extensive characterization using various microstructural, electrical, and chemical analyses, excellent MOS electrical properties of high-kappa gate dielectrics on Ge were successfully demonstrated with optimized surface nitridation of the Ge substrates.

Etude de la nitruration carbothermique du dioxyde de hafnium par diffraction X à haute température

NASA Astrophysics Data System (ADS)

Pialoux, A.

1993-03-01

The carbothermal reduction of hafnium dioxide under atmospheric level nitrogen pressure has been investigated using a graphite resistance high temperature X-ray diffractometer up to around 2300 K. A carbon transfer reaction through the gaseous phase (N 2, CO/CO 2) is shown to precede, then to compete the direct reduction of the hafnium oxide by the graphite in pure nitrogen. A complex mechanism has been found that accounts for the formation of hafnium dioxynitride and possibly of three other hafnium oxynitrides, then of hafnium mononitride and hafnium monocarbonitride, along two different steps between 1613 and 1923 K. An evaluation has been made concerning the composition of these γ 1- HfO 2-xN x/2□ x/2 (CaF 2-type structure), γ 2- Hf 7O 11N 2, γ 3- Hf 7O 8N 4 (rhombohedral), γ 4- Hf 2ON 2 (Mn 2O 3-type structure), HfN and HfN 1-zC z (NaCl-type structure) phases, considering the variations of their lattice parameters and the available data in the literature, especially on the isomorphous compounds of zirconium. It must be emphasized the new γ 1- HfO 2-xN x/2 phase, the dilatation of which is linear ( overlineα = 12×10 -6K -1), shows a constant composition from 2158 down to 1473 K (x ≈ 0,2). But under 1473 K, inevitably, the hafnium dioxynitride disappears, and poorly crystallized monoclinic αHfO 2 and rhombohedral γ 2- Hf 7O 11N 2 are formed.

Fate and Distribution of Heavy Metals in Wastewater Irrigated Calcareous Soils

PubMed Central

Stietiya, Mohammed Hashem; Duqqah, Mohammad; Udeigwe, Theophilus; Zubi, Ruba; Ammari, Tarek

2014-01-01

Accumulation of heavy metals in Jordanian soils irrigated with treated wastewater threatens agricultural sustainability. This study was carried out to investigate the environmental fate of Zn, Ni, and Cd in calcareous soils irrigated with treated wastewater and to elucidate the impact of hydrous ferric oxide (HFO) amendment on metal redistribution among soil fractions. Results showed that sorption capacity for Zarqa River (ZR1) soil was higher than Wadi Dhuleil (WD1) soil for all metals. The order of sorption affinity for WD1 was in the decreasing order of Ni > Zn > Cd, consistent with electrostatic attraction and indication of weak association with soil constituents. Following metal addition, Zn and Ni were distributed among the carbonate and Fe/Mn oxide fractions, while Cd was distributed among the exchangeable and carbonate fractions in both soils. Amending soils with 3% HFO did not increase the concentration of metals associated with the Fe/Mn oxide fraction or impact metal redistribution. The study suggests that carbonates control the mobility and bioavailability of Zn, Ni, and Cd in these calcareous soils, even in presence of a strong adsorbent such as HFO. Thus, it can be inferred that in situ heavy metal remediation of these highly calcareous soils using iron oxide compounds could be ineffective. PMID:24723833

Interrater reliability of visually evaluated high frequency oscillations.

PubMed

Spring, Aaron M; Pittman, Daniel J; Aghakhani, Yahya; Jirsch, Jeffrey; Pillay, Neelan; Bello-Espinosa, Luis E; Josephson, Colin; Federico, Paolo

2017-03-01

High frequency oscillations (HFOs) and interictal epileptiform discharges (IEDs) have been shown to be markers of epileptogenic regions. However, there is currently no 'gold standard' for identifying HFOs. Accordingly, we aimed to formally characterize the interrater reliability of HFO markings to validate the current practices. A morphology detector was implemented to detect events (candidate HFOs, lower-threshold events, and distractors) from the intracranial EEG (iEEG) of ten patients. Six electroencephalographers visually evaluated these events for the presence of HFOs and IEDs. Interrater reliability was calculated using pairwise Cohen's Kappa (κ) and intraclass correlation coefficients (ICC). The HFO evaluation distributions were significantly different for most pairs of reviewers (p<0.05; 11/15 pairs). Interrater reliability was poor for HFOs alone (κ mean =0.403; ICC=0.401) and HFO+IEDs (κ mean =0.568; ICC=0.570). The current practice of using two visual reviewers to identify HFOs is prone to bias arising from the poor agreement between reviewers, limiting the extrinsic validity of studies using these markers. The poor interrater reliability underlines the need for a framework to reconcile the important findings of existing studies. The present epoched design is an ideal candidate for the implementation of such a framework. Copyright © 2017 International Federation of Clinical Neurophysiology. Published by Elsevier B.V. All rights reserved.

Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering.

PubMed

Park, Gi Soon; Chu, Van Ben; Kim, Byoung Woo; Kim, Dong-Wook; Oh, Hyung-Suk; Hwang, Yun Jeong; Min, Byoung Koun

2018-03-28

An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se) 2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu 2- x Se-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J- V- T analysis.

Sol-gel derived ZnO as an electron transport layer (ETL) for inverted organic solar cells

NASA Astrophysics Data System (ADS)

Tiwari, D. C.; Dwivedi, Shailendra Kumar; Dipak, Phukhrambam; Chandel, Tarun; Sharma, Rishi

2017-05-01

In this work, we present the study of the fabrication process of the sol-gel derived zinc oxide (ZnO) as an electron transport layer (ETL.). The solution processed inverted bulk heterojunction organic solar cells based on a thin film blend of poly (3-hexylthiophene 2, 5-diyl) and [6,6]-phenyl-C61-butyric acid methyl ester is prepared. ZnO thin films are annealed at different temperature to optimize the solar cell performance and their characterization for their structural and optical properties are carried out. We have observed Voc=70mV, Jsc=1.33 µA/cm2 and FF=26% from the inverted heterojunction solar cell.

Zircon geochronology and Hf-O isotope geochemistry from granites in the Iapetus Suture Zone in Ireland and the Isle of Man

NASA Astrophysics Data System (ADS)

Fritschle, Tobias; Daly, J. Stephen; Whitehouse, Martin J.; McConnell, Brian; Buhre, Stephan

2014-05-01

Late Caledonian syn- to post-orogenic granites located in the Iapetus Suture Zone (ISZ) in Ireland and Britain have been related to A-type subduction and possible slab breakoff [1] following the Laurentia-Avalonian collision. Lack of reliable age data (especially in Ireland) has inhibited petrogenetic investigations of these rocks. Hence, ion microprobe U-Pb and oxygen isotope analyses as well as LA-MC-ICPMS Lu-Hf isotopic measurements on zircons from Irish and Isle of Man granites have been undertaken to provide better constraints on this enigmatic episode of the Caledonian Orogeny. Four stages of Late Caledonian granitic magmatism (c. 435, 417, 410 and 394 Ma) are indicated by U-Pb dating of oscillatory-zoned magmatic zircons. The Crossdoney, Kentstown, Drogheda and Ballynamuddagh granites together with a rhyolite from Glenamaddy have yielded U-Pb concordia ages, interpreted as intrusion-ages, between 419.9 ± 4.3 Ma (Glenamaddy) and 415.8 ± 2.0 Ma (Crossdoney) with a weighted average of 417.5 ± 0.9 Ma (MSWD = 1.3). The Glenamaddy Granite - which intruded the Glenamaddy Rhyolite - yielded an age of 410 ± 2.1 Ma. In addition, the Rockabill Granite yielded a younger age of 393.9 ± 1.9 Ma, whereas the Carnsore Granite yielded an older age of 434.6 ± 1.9 Ma. Inherited zircons (487 to 453 Ma) occur in several of the granites, and are interpreted to have been derived from Ordovician arc magmatic rocks accreted within the ISZ. A younger group of c. 440 Ma inherited zircons occurs in the c. 417 Ma Crossdoney and Ballynamuddagh granites. These grains could be related to continued or renewed Silurian arc magmatism. Hf-O isotopic measurements on the dated zircon grains range between -2 and +7 ɛHfi units and 5.5 to 8.5 o δ18O. These are interpreted to indicate the contribution of juvenile mantle melts - possibly derived from the Ordovician arc - to some of the granites. Significant heterogeneities in zircon oxygen isotopes in at least four of the granites further suggest the involvement of isotopically distinct protoliths. The Dhoon and Foxdale granites in the Isle of Man were previously regarded to be of Late Caledonian age. Surprisingly, zircons from these granites yielded concordant U-Pb ages of 455.6 ± 2.1 Ma (Dhoon) and 455.9 ± 2.1 Ma (Foxdale), respectively. Inherited cores are of Meso- and Palaeoproterozoic age. Hafnium isotopic analyses of the dated magmatic zircon rims from both intrusions are slightly more radiogenic than those from the Late Caledonian granites. Their δ18O values range between 5.5 to 7.5 o. The Isle of Man granites are now suggested to be the plutonic equivalents of a Late Ordovician (Caradocian) volcanic arc generated in the Iapetus Ocean. [1] Atherton & Ghani (2002), Lithos 62, 65-85.

Exploring the time-frequency content of high frequency oscillations for automated identification of seizure onset zone in epilepsy.

PubMed

Liu, Su; Sha, Zhiyi; Sencer, Altay; Aydoseli, Aydin; Bebek, Nerse; Abosch, Aviva; Henry, Thomas; Gurses, Candan; Ince, Nuri Firat

2016-04-01

High frequency oscillations (HFOs) in intracranial electroencephalography (iEEG) recordings are considered as promising clinical biomarkers of epileptogenic regions in the brain. The aim of this study is to improve and automatize the detection of HFOs by exploring the time-frequency content of iEEG and to investigate the seizure onset zone (SOZ) detection accuracy during the sleep, awake and pre-ictal states in patients with epilepsy, for the purpose of assisting the localization of SOZ in clinical practice. Ten-minute iEEG segments were defined during different states in eight patients with refractory epilepsy. A three-stage algorithm was implemented to detect HFOs in these segments. First, an amplitude based initial detection threshold was used to generate a large pool of HFO candidates. Then distinguishing features were extracted from the time and time-frequency domain of the raw iEEG and used with a Gaussian mixture model clustering to isolate HFO events from other activities. The spatial distribution of HFO clusters was correlated with the seizure onset channels identified by neurologists in seven patient with good surgical outcome. The overlapping rates of localized channels and seizure onset locations were high in all states. The best result was obtained using the iEEG data during sleep, achieving a sensitivity of 81%, and a specificity of 96%. The channels with maximum number of HFOs identified epileptogenic areas where the seizures occurred more frequently. The current study was conducted using iEEG data collected in realistic clinical conditions without channel pre-exclusion. HFOs were investigated with novel features extracted from the entire frequency band, and were correlated with SOZ in different states. The results indicate that automatic HFO detection with unsupervised clustering methods exploring the time-frequency content of raw iEEG can be efficiently used to identify the epileptogenic zone with an accurate and efficient manner.

Formic and Acetic Acid Observations over Colorado by Chemical Ionization Mass Spectrometry and Organic Acids' Role in Air Quality

NASA Astrophysics Data System (ADS)

Treadaway, V.; O'Sullivan, D. W.; Heikes, B.; Silwal, I.; McNeill, A.

2015-12-01

Formic acid (HFo) and acetic acid (HAc) have both natural and anthropogenic sources and a role in the atmospheric processing of carbon. These organic acids also have an increasing importance in setting the acidity of rain and snow as precipitation nitrate and sulfate concentrations have decreased. Primary emissions for both organic acids include biomass burning, agriculture, and motor vehicle emissions. Secondary production is also a substantial source for both acids especially from biogenic precursors, secondary organic aerosols (SOAs), and photochemical production from volatile organic compounds (VOCs) and oxygenated volatile organic compounds (OVOCs). Chemical transport models underestimate organic acid concentrations and recent research has sought to develop additional production mechanisms. Here we report HFo and HAc measurements during two campaigns over Colorado using the peroxide chemical ionization mass spectrometer (PCIMS). Iodide clusters of both HFo and HAc were recorded at mass-to-charge ratios of 173 and 187, respectively. The PCIMS was flown aboard the NCAR Gulfstream-V platform during the Deep Convective Clouds and Chemistry Experiment (DC3) and aboard the NCAR C-130 during the Front Range Air Pollution and Photochemistry Experiment (FRAPPE). The DC3 observations were made in May and June 2012 extending from the surface to 13 km over the central and eastern United States. FRAPPE observations were made in July and August 2014 from the surface to 7 km over Colorado. DC3 measurements reported here are focused over the Colorado Front Range and complement the FRAPPE observations. DC3 HFo altitude profiles are characterized by a decrease up to 6 km followed by an increase either back to boundary layer mixing ratio values or higher (a "C" shape). Organic acid measurements from both campaigns are interpreted with an emphasis on emission sources (both natural and anthropogenic) over Colorado and in situ photochemical production especially ozone precursors.

Optoelectronic properties of novel amorphous CuAlO2/ZnO NWs based heterojunction

NASA Astrophysics Data System (ADS)

Bu, Ian Y. Y.

2013-08-01

Amorphous p-type CuAlO2 thin films were grown onto n-type crystalline ZnO NWs forming a heterojunction through the combination of sol-gel process and hydrothermal growth method. The effects of temperature on structure and optoelectronic properties of CuAlO2 thin films were investigated through various measurement techniques. It was found that the derived CuAlO2 is Al-rich with thin film. UV-Vis measurements showed that the deposited CuAlO2 films are semi-transparent with maximum transmittance ∼82% at 500 nm. Electrical characterization and integration into pn junction confirms that the amorphous CuAlO2 is p-type and exhibited photovoltaic behavior.

Thermochromic properties of W-doped VO2 thin films deposited by aqueous sol-gel method for adaptive infrared stealth application

NASA Astrophysics Data System (ADS)

Liu, Dongqing; Cheng, Haifeng; Xing, Xin; Zhang, Chaoyang; Zheng, Wenwei

2016-07-01

The W doped VO2 thin films with various W contents were successfully deposited by aqueous sol-gel method followed by a post annealing process. The derived thin films were characterized by X-ray diffraction, Raman spectra, scanning electron microscopy and atomic force microscopy. Besides, the resistance-temperature relationship and infrared emissivity in the waveband 7.5-14 μm were analyzed, and the effects of W doping on the thermochromic properties of VO2 thin films were studied. The results show that W atoms enter the crystal lattice of VO2 and the transition temperature decreases gradually with increasing doping amount of W. The emissivity of VO2-W-4% thin films has dropped to 0.4 when its real temperature is above 30 °C. The thermal infrared images were also examined under different temperature by thermal imager. The results indicate that the temperature under which W doped VO2 thin films begin to have lower emissivity decreases gradually with increasing doping amount of W. W doped VO2 thin films can control its infrared radiation intensity actively at a lower temperature level of 30 °C, which has great application prospects in the adaptive infrared stealth technology.

Preparation and Characterization of Ferroelectric BaTi0.91(Hf0.5, Zr0.5)0.09O3 Thin Films by Sol-Gel Process Using Titanium and Zirconium Alkoxides

NASA Astrophysics Data System (ADS)

Thongrueng, Jirawat; Nishio, Keishi; Nagata, Kunihiro; Tsuchiya, Toshio

2000-09-01

Sol-gel-derived BaTi0.91(Hf0.5, Zr0.5)0.09O3 (BTHZ-9) thin films have been successfully prepared on Pt and Pt(111)/Ti/SiO2/Si(100) substrates by spin-coating and sintering from 550 to 900°C for 2 h in oxygen ambient. X-ray diffraction measurement indicated that the single perovskite phase of the BTHZ-9 thin films was obtained at heat treatment above 650°C. The formation temperature of the double-alkoxy-derived BTHZ-9 thin films was lower by at least 80°C than that of the films prepared from only titanium alkoxide. The microstructure of the films was observed by atomic force microscopy and scanning electron microscopy. The grain size of the films increased from 70 to 200 nm with increasing sintering temperature ranging from 650 to 850°C. The maximum peak for the dielectric constant, corresponding to the Curie point (87°C), was broad and lower in magnitude compared with that of the BTHZ-9 bulk ceramics. Tensile stresses resulting from the differences between thermal expansion coefficients of the substrate and the film caused poor electrical properties. BTHZ-9 thin films exhibited a well-saturated polarization-electric field hysteresis loop. The polarization and coercive field for the 850-nm-thick BTHZ-9 thin film prepared on Pt/Ti/SiO2/Si substrate at 750°C were determined to be 8 μC/cm2 and 15 kV/cm, respectively. Those of the BTHZ-9 thin film prepared on Pt substrate at 850°C were found to be 9 μC/cm2 and 18 kV/cm, respectively.

Synthesis, characterization and biological study on Cr(3+), ZrO(2+), HfO(2+) and UO(2)(2+) complexes of oxalohydrazide and bis(3-hydroxyimino)butan-2-ylidene)-oxalohydrazide.

PubMed

El-Asmy, A A; El-Gammal, O A; Radwan, H A

2010-09-01

Cr(3+), ZrO(2+), HfO(2+) and UO(2)(2+) complexes of oxalohydrazide (H(2)L(1)) and oxalyl bis(diacetylmonoxime hydrazone) [its IUPAC name is oxalyl bis(3-hydroxyimino)butan-2-ylidene)oxalohydrazide] (H(4)L(2)) have been synthesized and characterized by partial elemental analysis, spectral (IR; electronic), thermal and magnetic measurements. [Cr(L(1))(H(2)O)(3)(Cl)].H(2)O, [ZrO(HL(1))(2)].C(2)H(5)OH, [UO(2)(L(1))(H(2)O)(2)] [ZrO(H(3)L(2))(Cl)](2).2H(2)O, [HfO(H(3)L(2))(Cl)](2).2H(2)O and [UO(2)(H(2)L(2))].2H(2)O have been suggested. H(2)L(1) behaves as a monobasic or dibasic bidentate ligand while H(4)L(2) acts as a tetrabasic octadentate with the two metal centers. The molecular modeling of the two ligands have been drawn and their molecular parameters were calculated. Examination of the DNA degradation of H(2)L(1) and H(4)L(2) as well as their complexes revealed that direct contact of [ZrO(H(3)L(2))(Cl)](2).2H(2)O or [HfO(H(3)L(2))(Cl)](2).2H(2)O degrading the DNA of Eukaryotic subject. The ligands and their metal complexes were tested against Gram's positive Bacillus thuringiensis (BT) and Gram's negative (Escherichia coli) bacteria. All compounds have small inhibitory effects. Copyright 2010 Elsevier B.V. All rights reserved.

Temperature dependency of double material gate oxide (DMGO) symmetric dual-k spacer (SDS) wavy FinFET

NASA Astrophysics Data System (ADS)

Pradhan, K. P.; Priyanka; Sahu, P. K.

2016-01-01

Symmetric Dual-k Spacer (SDS) Trigate Wavy FinFET is a novel hybrid device that combines three significant and advanced technologies i.e., ultra-thin-body (UTB), FinFET, and symmetric spacer engineering on a single silicon on insulator (SOI) platform. This innovative architecture promises to enhance the device performance as compared to conventional FinFET without increasing the chip area. For the first time, we have incorporated two different dielectric materials (SiO2, and HfO2) as gate oxide to analyze the effect on various performance metrics of SDS wavy FinFET. This work evaluates the response of double material gate oxide (DMGO) on parameters like mobility, on current (Ion), transconductance (gm), transconductance generation factor (TGF), total gate capacitance (Cgg), and cutoff frequency (fT) in SDS wavy FinFET. This work also reveals the presence of biasing point i.e., zero temperature coefficient (ZTC) bias point. The ZTC bias point is that point where the device parameters become independent of temperature. The impact of operating temperature (T) on above said various performances are also subjected to extensive analysis. This further validates the reliability of DMGO-SDS FinFET and its application opportunities involved in modeling analog/RF circuits for a broad range of temperature applications. From extensive 3-D device simulation, we have determined that the inclusion of DMGO in SDS wavy FinFET is superior in performance.

Alkali metal hafnium oxide scintillators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bourret-Courchesne, Edith; Derenzo, Stephen E.; Taylor, Scott Edward

The present invention provides for a composition comprising an inorganic scintillator comprising an alkali metal hafnate, optionally cerium-doped, having the formula A 2HfO 3:Ce; wherein A is an alkali metal having a valence of 1, such as Li or Na; and the molar percent of cerium is 0% to 100%. The alkali metal hafnate are scintillators and produce a bright luminescence upon irradiation by a suitable radiation.

Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Zhu, Dongming

2016-01-01

Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

Vertical Structure of NGC 4631

NASA Astrophysics Data System (ADS)

Ann, Hong Bae; Seo, Mira Seo; Baek, Su-Ja

2011-02-01

We present a deep CCD imaging in B and V bands which allows us to analyze the vertical structure of NGC 4631. We derive the scale heights of the thin and thick disks at a variety of positions along the major axis of the disk. The scale heights of the thin disk are nearly constant while those of the thick disk tend to increase with increasing galactocentric distance. The mean scale heights of the thin disk derived from B and V images are similar to each other (˜450 pc). Instead, those of the thick disk show a strong east-west asymmetry which is caused by the diffuse stellar emission that is most prominent in the north west regions above the disk plane. The ratio of scale heights (z_{thick}/z_{thin}) is about 2.5 in the east side of the disk. However, this ratio is greater than 4 for the thick disk above the disk plane in the west side of the galaxy.

Metal Organic Chemical Vapor Deposition of Oxide Films for Advanced Applications

DTIC Science & Technology

2000-06-01

coatings , photovoltaics, touch sensitive controls, electromagnetic shielding (as found on microwave ovens and stealth fighters), static dissipaters, and so...depositing high quality films. The methods are physical vapor deposition ( PVD ), spin/mist deposition, (CVD), and alternating layer (AL) CVD. PVD ...PZT & SBT, YBa2Cu3O, CeO, InO, TCOs, Varistors Ta2O5 , ZrO, MnO, HfO, CeO, MnO, MgO SAW/microwave Silicon/: Si, SiGe, SiGeC, �. Opto-electronics

Impact of AlO x layer on resistive switching characteristics and device-to-device uniformity of bilayered HfO x -based resistive random access memory devices

NASA Astrophysics Data System (ADS)

Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung

2018-06-01

An AlO x layer was deposited on HfO x , and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlO x (1 nm)/HfO x (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V Forming) of 2.08 V, set voltage (V Set) of 1.96 V, and reset voltage (V Reset) of ‑1.02 V, than the device with TiN/Ti/HfO x (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlO x layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

Convective thinning of the lithosphere - A mechanism for the initiation of continental rifting

NASA Technical Reports Server (NTRS)

Spohn, T.; Schubert, G.

1982-01-01

A model of lithospheric thinning, in which heat is convected to the base and conducted within the lithosphere, is presented. An analytical equation for determinining the amount of thinning attainable on increasing the heat flux from the asthenosphere is derived, and a formula for lithosphere thickness approximations as a function of time is given. Initial and final equilibrium thicknesses, thermal diffusivity, transition temperature profile, and plume temperature profile are all factors considered for performing rate of thinning determinations. In addition, between initial and final equilibrium states, lithospheric thinning occurs at a rate which is inversely proportional to the square root of the time. Finally, uplift resulting from thermal expansion upon lithospheric thinning is on the order of 10 to the 2nd to 10 to the 3rd m.

Thermophysical properties of plasma sprayed coatings

NASA Technical Reports Server (NTRS)

Wilkes, K. E.; Lagedrost, J. F.

1973-01-01

Thermophysical properties of plasma sprayed materials were determined for the following plasma sprayed materials: CaO - stabilized ZrO2, Y2O3 - stabilized ZerO2, Al2O3, HfO2 Mo, nichrome, NiAl, Mo-ZrO2, and MoAl2O3 mixtures. In all cases the thermal conductivity of the as-sprayed materials was found to be considerably lower than that of the bulk material. The flash-laser thermal diffusivity technique was used both for diffusivity determination of single-layer materials and to determine the thermal contact resistance at the interface of two-layer specimens.

High-performance visible/UV CCD focal plane technology for spacebased applications

NASA Technical Reports Server (NTRS)

Burke, B. E.; Mountain, R. W.; Gregory, J. A.; Huang, J. C. M.; Cooper, M. J.; Savoye, E. D.; Kosicki, B. B.

1993-01-01

We describe recent technology developments aimed at large CCD imagers for space based applications in the visible and UV. Some of the principal areas of effort include work on reducing device degradation in the natural space-radiation environment, improvements in quantum efficiency in the visible and UV, and larger-device formats. One of the most serious hazards for space based CCD's operating at low signal levels is the displacement damage resulting from bombardment by energetic protons. Such damage degrades charge-transfer efficiency and increases dark current. We have achieved improved hardness to proton-induced displacement damage by selective ion implants into the CCD channel and by reduced temperature of operation. To attain high quantum efficiency across the visible and UV we have developed a technology for back-illuminated CCD's. With suitable antireflection (AR) coatings such devices have quantum efficiencies near 90 percent in the 500-700-nm band. In the UV band from 200 to 400 nm, where it is difficult to find coatings that are sufficiently transparent and can provide good matching to the high refractive index of silicon, we have been able to substantially increase the quantum efficiency using a thin film of HfO2 as an AR coating. These technology efforts were applied to a 420 x 420-pixel frame-transfer imager, and future work will be extended to a 1024 x 1024-pixel device now under development.

The Ages of the Thin Disk, Thick Disk, and the Halo from Nearby White Dwarfs

NASA Astrophysics Data System (ADS)

Kilic, Mukremin; Munn, Jeffrey A.; Harris, Hugh C.; von Hippel, Ted; Liebert, James W.; Williams, Kurtis A.; Jeffery, Elizabeth; DeGennaro, Steven

2017-03-01

We present a detailed analysis of the white dwarf luminosity functions derived from the local 40 pc sample and the deep proper motion catalog of Munn et al. Many previous studies have ignored the contribution of thick disk white dwarfs to the Galactic disk luminosity function, which results in an erroneous age measurement. We demonstrate that the ratio of thick/thin disk white dwarfs is roughly 20% in the local sample. Simultaneously fitting for both disk components, we derive ages of 6.8-7.0 Gyr for the thin disk and 8.7 ± 0.1 Gyr for the thick disk from the local 40 pc sample. Similarly, we derive ages of 7.4-8.2 Gyr for the thin disk and 9.5-9.9 Gyr for the thick disk from the deep proper motion catalog, which shows no evidence of a deviation from a constant star formation rate in the past 2.5 Gyr. We constrain the time difference between the onset of star formation in the thin disk and the thick disk to be {1.6}-0.4+0.3 Gyr. The faint end of the luminosity function for the halo white dwarfs is less constrained, resulting in an age estimate of {12.5}-3.4+1.4 Gyr for the Galactic inner halo. This is the first time that ages for all three major components of the Galaxy have been obtained from a sample of field white dwarfs that is large enough to contain significant numbers of disk and halo objects. The resultant ages agree reasonably well with the age estimates for the oldest open and globular clusters.

High transconductance zinc oxide thin-film transistors on flexible plastic substrates

NASA Astrophysics Data System (ADS)

Kimura, Yuta; Higaki, Tomohiro; Maemoto, Toshihiko; Sasa, Shigehiko; Inoue, Masataka

2012-02-01

We report the fabrication and characterization on high-performance ZnO based TFTs on unheated plastic substrate. ZnO films were grown by pulsed laser deposition (PLD) on polyethylene napthalate (PEN) substrates. Top-gate ZnO-TFTs were fabricated by photolithography and wet chemical etching. The source and drain contacts were formed by lift-off of e-beam deposited Ti(20 nm)/Au(200 nm). An HfO2 with thickness 100 nm was selected as the gate insulator, and top gate electrode Ti(20 nm)/Au(200 nm) was deposited by e-beam evaporation. We prepared a set of the structure with SiO2/TiO2 to investigate the characteristic changes that appear in the film characteristics in response to bending. From the ID-VDS and the transfer characteristics which are affected by bending and return for the ZnO-TFT with SiO2/TiO2 buffers, the TFTs were bent to a curvature radius of 8.5 mm. The transconductance, gm is obtained 1.7 mS/mm on flat, 1.4 mS/mm on bending and 1.3 mS/mm on returning the film, respectively. The ID-VDS characteristics were therefore not changed by bending. All of the devices exhibited a clear pinch-off behavior and a high on/off current ratio of ˜10^6. The threshold voltages, Vth were not changed drastically. Furthermore, TFT structures were changed from a conventional top-gate type to a bottom-gate type. A high transconductance of 95.8 mS/mm was achieved in the bottom-gate type TFT by using Al2O3 oxide buffer.

120 MeV Ag ion induced effects in Au/HfO2/Si MOSCAPs

NASA Astrophysics Data System (ADS)

Manikanthababu, N.; Prajna, K.; Pathak, A. P.; Rao, S. V. S. Nageswara

2018-05-01

HfO2/Si thinfilms were deposited by RF sputtering technique. 120 MeV Ag ion irradiation has been used to study the electrical properties of Au/HfO2/Si MOSCAPs. SHI (120 MeV Ag) induced annealing, defects creation and intermixing effects on the electrical properties of these systems have been studied. Here, we have observed that the high electronic excitation can cause a significant reduction of leakage currents in these MOSCAP devices. Various quantum mechanical tunneling phenomenon has been observed from the I-V characteristics.

Thin Ice Area Extraction in the Seasonal Sea Ice Zones of the Northern Hemisphere Using Modis Data

NASA Astrophysics Data System (ADS)

Hayashi, K.; Naoki, K.; Cho, K.

2018-04-01

Sea ice has an important role of reflecting the solar radiation back into space. However, once the sea ice area melts, the area starts to absorb the solar radiation which accelerates the global warming. This means that the trend of global warming is likely to be enhanced in sea ice areas. In this study, the authors have developed a method to extract thin ice area using reflectance data of MODIS onboard Terra and Aqua satellites of NASA. The reflectance of thin sea ice in the visible region is rather low. Moreover, since the surface of thin sea ice is likely to be wet, the reflectance of thin sea ice in the near infrared region is much lower than that of visible region. Considering these characteristics, the authors have developed a method to extract thin sea ice areas by using the reflectance data of MODIS (NASA MYD09 product, 2017) derived from MODIS L1B. By using the scatter plots of the reflectance of Band 1 (620 nm-670 nm) and Band 2 (841 nm-876 nm)) of MODIS, equations for extracting thin ice area were derived. By using those equations, most of the thin ice areas which could be recognized from MODIS images were well extracted in the seasonal sea ice zones in the Northern Hemisphere, namely the Sea of Okhotsk, the Bering Sea and the Gulf of Saint Lawrence. For some limited areas, Landsat-8 OLI images were also used for validation.

High frequency oscillations evoked by peripheral magnetic stimulation.

PubMed

Biller, S; Simon, L; Fiedler, P; Strohmeier, D; Haueisen, J

2011-01-01

The analysis of somatosensory evoked potentials (SEP) and / or fields (SEF) is a well-established and important tool for investigating the functioning of the peripheral and central human nervous system. A standard technique to evoke SEPs / SEFs is the stimulation of the median nerve by using a bipolar electrical stimulus. We aim at an alternative stimulation technique enabling stimulation of deep nerve structures while reducing patient stress and error susceptibility. In the current study, we apply a commercial transcranial magnetic stimulation system for peripheral magnetic stimulation of the median nerve. We compare the results of simultaneously recorded EEG signals to prove applicability of our technique to evoke SEPs including low frequency components (LFC) as well as high frequency oscillations (HFO). Therefore, we compare amplitude, latency and time-frequency characteristics of the SEP of 14 healthy volunteers after electric and magnetic stimulation. Both low frequency components and high frequency oscillations were detected. The HFOs were superimposed onto the primary cortical response N20. Statistical analysis revealed significantly lower amplitudes and increased latencies for LFC and HFO components after magnetic stimulation. The differences indicate the inability of magnetic stimulation to elicit supramaximal responses. A psycho-perceptual evaluation showed that magnetic stimulation was less unpleasant for 12 out of the 14 volunteers. In conclusion, we showed that LFC and HFO components related to median nerve stimulation can be evoked by peripheral magnetic stimulation.

Parental exposure to heavy fuel oil induces developmental toxicity in offspring of the sea urchin Strongylocentrotus intermedius.

PubMed

Duan, Meina; Xiong, Deqi; Yang, Mengye; Xiong, Yijun; Ding, Guanghui

2018-05-03

The present study investigated the toxic effects of parental (maternal/paternal) exposure to heavy fuel oil (HFO) on the adult reproductive state, gamete quality and development of the offspring of the sea urchin Strongylocentrotus intermedius. Adult sea urchins were exposed to effluents from HFO-oiled gravel columns for 7 days to simulate an oil-contaminated gravel shore, and then gametes of adult sea urchins were used to produce embryos to determine developmental toxicity. For adult sea urchins, no significant difference in the somatic size and weight was found between the various oil loadings tested, while the gonad weight and gonad index were significantly decreased at higher oil loadings. The spawning ability of adults and fecundity of females significantly decreased. For gametes, no effect was observed on the egg size and fertilization success in any of the groups. However, a significant increase in the percentage of anomalies in the offspring was observed and then quantified by an integrative toxicity index (ITI) at 24 and 48 h post fertilization. The offspring from exposed parents showed higher ITI values with more malformed embryos. The results confirmed that parental exposure to HFO can cause adverse effects on the offspring and consequently affect the recruitment and population maintenance of sea urchins. Copyright © 2018 Elsevier Inc. All rights reserved.

Physicochemical and optical properties of combustion-generated particles from Ship Diesel Engines

NASA Astrophysics Data System (ADS)

Kim, H.; Jeong, S.; Jin, H. C.; Kim, J. Y.

2015-12-01

Shipping contributes significantly to the anthropogenic burden of particulate matter (PM), and is among the world's highest polluting combustion sources per fuel consumed. Moreover, ships are a highly concentrated source of pollutants which are emitted into clean marine environments (e.g., Artic region). Shipping utilizes heavy fuel oil (HFO) which is less distilled compared to fuels used on land and few investigations on shipping related PM properties are available. BC is one of the dominant combustion products of ship diesel engines and its chemical and microphysical properties have a significant impact on climate by influencing the amount of albedo reduction on bright surfaces such as in polar regions. We have carried out a campaign to characterize the PM emissions from medium-sized marine engines in Gunsan, Jeonbuk Institute of Automotive Technology. The properties of ship-diesel PM have characterized depending on (1) fuel sulfur content (HFO vs. ULSD) and (2) engine conditions (Running state vs. Idling state). Scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDX) equipped with HRTEM and Raman spectroscopy were used for physicochemical analysis. Optical properties, which are ultimately linked to the snow/ice albedo decrease impacting climate, were assessed as well. PM generated under high engine temperature conditions had typical features of soot, e.g., concentric circles comprised of closely packed graphene layers, however PM generated by the idling state at low combustion temperature was characterized by amorphous and droplet-like carbonaceous particles with no crystalline structure. Significant differences in optical properties depending on the combustion conditions were also observed. Particles from running conditions showed wavelength-independent absorbing properties, whereas the particles from idling conditions showed enhanced absorption at shorter wavelengths, which is characteristic of brown carbon. Regarding different fuel types, distinctive structure differences were not observed, but EDX results showed that PM generated by HFO combustion has sulfur content in PM whereas ULSD generated 100% carbon composed PM.

Synthesis of BaW2O7-ethylene glycol inorganic-organic hybrid and its topochemical transformation to thin WS2 nanoplates

NASA Astrophysics Data System (ADS)

Afanasiev, Pavel

2018-02-01

A novel inorganic-organic hybrid barium tungstate - ethylene glycol Ba(C2H6O2)W2O7 phase has been prepared by non-aqueous precipitation and characterized. According to powder X-ray diffraction, the solid has an orthorhombic lattice (a = b = 6.415 Å, c = 13.05 Å) and represents a derivative of the H2W2O7 lamellar acid. The Ba(C2H6O2)W2O7 hybrid material is a layered solid and crystallizes as thin plates, which can be further topotacticaly transformed to few-layer WS2 nanoplates. Tungsten sulfide as obtained possesses high specific surface area and increased defectness of layers. Thin-layer WS2 materials as prepared show advantageous properties as hydrogen evolution electrocatalysts, or in combination with TiO2 as co-catalysts for photo catalytic hydrogen production from methanol.

Effects of ion irradiation on the mechanical properties of SiNa wO xC yH z sol-gel derived thin films

NASA Astrophysics Data System (ADS)

Lucca, D. A.; Qi, Y.; Harriman, T. A.; Prenzel, T.; Wang, Y. Q.; Nastasi, M.; Dong, J.; Mehner, A.

2010-10-01

A study of the effects of ion irradiation of hybrid organic/inorganic modified silicate thin films on their mechanical properties is presented. NaOH catalyzed SiNa wO xC yH z thin films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300 °C, the films were irradiated with 125 keV H + or 250 keV N 2+ at fluences ranging from 1 × 10 14 to 2.5 × 10 16 ions/cm 2. Nanoindentation was used to characterize the films. Changes in hardness and reduced elastic modulus were examined as a function of ion fluence and irradiating species. The resulting increases in hardness and reduced elastic modulus are compared to similarly processed acid catalyzed silicate thin films.

ALK status testing in non-small-cell lung carcinoma by FISH on ThinPrep slides with cytology material.

PubMed

Minca, Eugen C; Lanigan, Christopher P; Reynolds, Jordan P; Wang, Zhen; Ma, Patrick C; Cicenia, Joseph; Almeida, Francisco A; Pennell, Nathan A; Tubbs, Raymond R

2014-04-01

Oncogenic anaplastic lymphoma kinase (ALK) gene rearrangements in non-small-cell lung carcinomas (NSCLC) provide the basis for targeted therapy with crizotinib and other specific ALK inhibitors. Treatment eligibility is conventionally determined by the Food and Drug Administration-approved companion diagnostic fluorescence in situ hybridization (FISH) assay on paraffin-embedded tissue (PET). On limited samples such as fine needle aspiration-derived cytoblocks, FISH for ALK is often uninformative. FISH performed on liquid-based ThinPrep slides (ThinPrep-FISH) may represent a robust alternative. Two hundred thirty cytology samples from 217 patients with advanced NSCLC, including a consecutive series of 179 specimens, were used to generate matched ThinPrep slides and paraffin cytoblocks. The same ThinPrep slides used for cytologic diagnosis were assessed by standard ALK break-apart two-color probe FISH, after etching of tumor areas. Ultrasensitive ALK immunohistochemistry (IHC) on corresponding cytoblocks [D5F3 antibody, OptiView signal amplification] served as the reference data set. ThinPrep-FISH ALK signals were robust in 228 of 230 cases and not compromised by nuclear truncation inherent in paraffin-embedded tissue-FISH; only two samples displayed no signals. Nine of 178 informative cases (5%) in the consecutive series and 18 of 228 informative cases (7.8%) overall were ALK rearranged by ThinPrep-FISH. In 154 informative matched ThinPrep-FISH and cytoblock-IHC samples, 152 were concordant (10, 6.5% ALK status positive; 142, 92.2% ALK status negative), and two (1.3%) were ThinPrep-FISH positive but IHC negative (sensitivity 100%, specificity 98.6%, overall agreement 98.7%). Detection of ALK gene rearrangements in liquid cytology ThinPrep slides derived from patients with NSCLC can be confidently used for clinical ALK molecular testing.

Kinetic Studies on Photodeposition of Polydiacetylene Thin Film from Solution: Preliminary Determination of the Rate Law

NASA Technical Reports Server (NTRS)

Paley, M. S.; Armstrong, S.; Witherow, W. K.; Frazier, D. O.

1996-01-01

Preliminary kinetic studies were undertaken on the photodeposition of thin films of a polydiacetylene derivative of 2-methyl-4-nitroaniline from monomer solutions onto quartz substrates. Solutions of the monomer, DAMNA, in 1,2-dichloroethane at various concentrations were irradiated at 364 nm using an argon-ion laser at several intensities. It was found that the rate of polydiacetylene (PDAMNA) film photodeposition varies linearly with UV light intensity and as the square root of monomer concentration.

Molecular diodes and ultra-thin organic rectifying junctions: Au-S-CnH2n-Q3CNQ and TCNQ derivatives.

PubMed

Ashwell, Geoffrey J; Moczko, Katarzyna; Sujka, Marta; Chwialkowska, Anna; Hermann High, L R; Sandman, Daniel J

2007-02-28

Attempts to obtain derivatives of the molecular diode, 2-{4-[1-cyano-2-(1-(omega-acetylsulfanylalkyl)-1H-quinolin-4-ylidene)-ethylidene]-cyclohexa-2,5-dienylidene}-malonitrile [1, CH(3)CO-S-C(n)H(2n)-Q3CNQ], from either 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-p-quinodimethane (TCNQF(4)) or 2,3,5,6-tetramethyl-7,7,8,8-tetracyano-p-quinodimethane (TMTCNQ) result in ring closure via the cyano group of the pi-bridge and yield di-substituted analogues: 2-{2,3,5,6-tetrafluoro-4-[6-(10-acetylsulfanyldecyl)-3-(1-(10-acetylsulfanyldecyl)-1H-quinolin-4-ylidenemethyl)-6H-benzo[f][1,7]naphthyridin-2-ylidene]-cyclohexa-2,5-dienylidene}-malonitrile (2a) and the 2,3,5,6-tetramethyl derivative (2b). Self-assembled monolayers (SAMs) of these donor-(pi-bridge)-acceptor molecular diodes exhibit asymmetric current-voltage characteristics with electron flow at forward bias from the top contact to surface C(CN)(2) groups. Comparison is made with I-V curves from ultra-thin films of an organic rectifying junction in which TCNQ(-) is electron-donating and a donor-(sigma-bridge)-acceptor diode in which TCNQ degrees is electron-accepting.

Influence of high energy ion irradiation on fullerene derivative (PCBM) thin films

NASA Astrophysics Data System (ADS)

Sharma, Trupti; Singhal, Rahul; Vishnoi, Ritu; Lakshmi, G. B. V. S.; Biswas, S. K.

2017-04-01

The modifications produced by 55 MeV Si4+ swift heavy ion irradiation on the phenyl C61 butyric acid methyl ester (PCBM) thin films (thickness ∼ 100 nm) has been enlightened. The PCBM thin films were irradiated at 1 × 1010, 1 × 1011 and 1 × 1012 ions/cm2 fluences. After ion irradiation, the decreased optical band gap and FTIR band intensities were observed. The Raman spectroscopy reveals the damage produced by energetic ions. The morphological variation were investigated by atomic force microscopy and contact angle measurements and observed to be influenced by incident ion fluences. After 1011 ions/cm2 fluence, the overlapping of ion tracks starts and produced overlapping effects.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

PubMed

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-04-28

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.

Serotonin (5-HT)2A/2C receptor agonist (2,5-dimethoxy-4-idophenyl)-2-aminopropane hydrochloride (DOI) improves voiding efficiency in the diabetic rat.

PubMed

Tu, Hongjian; Cao, Nailong; Gu, Baojun; Si, Jiemin; Chen, Zhong; Andersson, Karl-Erik

2015-07-01

To examine the effects of the serotonin (5-HT)2A/2C receptor agonist (2,5-dimethoxy-4-idophenyl)-2-aminopropane hydrochloride (DOI) on micturition in rats with diabetes mellitus (DM). Female Sprague-Dawley rats (n = 16) were divided into two groups: rats with Type 1 DM and age-matched control rats. DM was induced by i.p. injection of streptozotocin (65 mg/kg) and detailed cystometrogram (CMG) studies were performed 8 weeks post-injection in all rats under urethane anaesthesia. The selective 5-HT2A antagonist ketanserin was administered after each DOI dose-response curve was plotted. All drugs were administered i.v. Compared with controls, comprehensive urodynamic studies showed that DM rats had a higher bladder capacity and post-void residual urine volume (PVR), and a markedly lower voiding efficiency. In DM rats, DOI (0.01-0.3 mg/kg) induced significant dose-dependent increases in micturition volume and reductions in PVR, resulting in greater voiding efficiency. CMG measurements showed a dose-dependent increase in high-frequency oscillation (HFO) activity, evidenced by an increased duration of HFOs per voiding. This correlated with the improved voiding efficiency. Ketanserin (0.1 mg/kg) partially or completely reversed the DOI-induced changes. The HFOs observed in the present study seem to correlate with external urethral sphincter bursting activity during voiding. Bladder voiding efficiency was reduced in DM rats. The 5-HT2A receptor agonist can enhance HFO activity and improves voiding efficiency, and so may represent a new strategy to improve voiding efficiency after DM in experimental studies. © 2014 The Authors BJU International © 2014 BJU International Published by John Wiley & Sons Ltd.

Electrical and optical properties of sol-gel derived La modified PbTiO 3 thin films

NASA Astrophysics Data System (ADS)

Chopra, Sonalee; Sharma, Seema; Goel, T. C.; Mendiratta, R. G.

2004-09-01

Lanthanum modified lead titanate (Pb 1- xLa xTi 1- x/4 O 3) PLT x ( x=0.08 i.e. PLT8) sol-gel derived thin films have been prepared on indium tin oxide (ITO) coated glass and quartz substrates using lead acetate trihydrate, lanthanum acetate hydrate and titanium isopropoxide as precursors along with 2-methoxyethanol as solvent and acetic acid as catalyst by spin coating method. The microstructure and surface morphology of the films annealed at 650 °C have been studied by X-ray diffraction technique and atomic force microscope (AFM). XRD has shown a single phase with tetragonal structure and AFM images have confirmed a smooth and crack-free surface with low surface roughness. The dependence of leakage current on applied voltage show ohmic behavior at low field region with a space charge conduction mechanism at high fields. The wavelength dispersion curve of thin films obtained from the transmission spectrum of thin films show that the films have high optical transparency in the visible region.

Ship diesel emission aerosols: A comprehensive study on the chemical composition, the physical properties and the molecular biological and toxicological effects on human lung cells of aerosols from a ship diesel engine operated with heavy or light diesel fuel oil

NASA Astrophysics Data System (ADS)

Zimmermann, R.; Buters, J.; Öder, S.; Dietmar, G.; Kanashova, T.; Paur, H.; Dilger, M.; Mülhopt, S.; Harndorf, H.; Stengel, B.; Rabe, R.; Hirvonen, M.; Jokiniemi, J.; Hiller, K.; Sapcariu, S.; Berube, K.; Sippula, O.; Streibel, T.; Karg, E.; Schnelle-Kreis, J.; Lintelmann, J.; Sklorz, M.; Arteaga Salas, M.; Orasche, J.; Müller, L.; Reda, A.; Passig, J.; Radischat, C.; Gröger, T.; Weiss, C.

2013-12-01

The Virtual Helmholtz Institute-HICE (www.hice-vi.eu) addresses chemical & physical properties, transformation processes and health effects of anthropogenic combustion emissions. This is performed by thorough comprehensive chemical and physical characterization of combustion aerosols (including application of advantageous on-line methods) and studying of biological effects on human lung cell-cultures. A new ALI air-liquid-interface (ALI) exposition system and a mobile S2-biological laboratory were developed for the HICE-measurements. Human alveolar basal epithelial cells (A549 etc.) are ALI-exposed to fresh, diluted (1:40-1:100) combustion aerosols and subsequently were toxicologically and molecular-biologically characterized (e.g. proteomics). By using stable isotope labeling technologies (13C-Glucose/metabolomics; 2H-Lysine/SILAC-proteomics), high sensitivity and accuracy for detection of molecular-biological effects is achievable even at sub-toxic effect dose levels. Aerosols from wood combustion and ship diesel engine (heavy/light fuel oil) have been investigated. The effect of wood combustion and ship diesel PM e.g. on the protein expression of ALI-exposed A549 cells was compared. Filtered aerosol is used as gas-reference for the isotope labeling based method (SILAC). Therefore the effects of wood combustion- and shipping diesel-PM can be directly compared. Ship diesel aerosol causes a broader distribution in the observed fold changes (log2), i.e. more proteins are significantly up-/down-regulated in case of shipping diesel PM-exposure. This corresponds to a stronger biological reaction if compared to wood combustion-PM exposure. The chemical analysis results on wood combustion- and ship diesel-PM depict more polycyclic aromatic hydrocarbons (PAH)/oxidized-PAH but less of some transition metals (V, Fe) in the wood combustion case. Interestingly, alkylated PAH are considerably more abundant in shipping PM, suggesting that PAH/Oxy-PAH may be less relevant for observed acute-toxic effects. The influence of transition metals and alkylated PAH is discussed in this context. Finally the differential biological effects of LFO- and HFO-ship emissions were investigated thoroughly. Here interesting observation were made. The chemical profile of the ship diesel engine operated with HFO and LFO is very different. Although the soot content of LFO exhaust is higher, the HFO-PM is showing considerably higher toxic- and biological-effects in the on-line cell exposure experiments. This higher particle toxicity is associated with larger aromatic structures and transition-metal contend in the PM. In addition to PM also the gas phase of the emission was investigated, e.g. by on-line photo ionization mass spectrometry and off-line techniques. Further results will be dis-cussed in the contribution. The massive differences of LFO and HFO emission are thoroughly discussed with respect to the chemical signature of gas and particulate phase. Furthermore concept and first results on a simulated aging are presented.

Silicon-based microfabricated tin oxide gas sensor incorporating use of Hall effect measurement

NASA Astrophysics Data System (ADS)

Hammond, Joseph Wilson

2000-10-01

Characterization of a microfabricated sol-gel derived nano-particle tin oxide thin film on a silicon substrate, through simultaneous measurement of conductivity, Hall mobility and electron density, had not been accomplished before this study. Conductivity is a function of carrier density and Hall mobility. Therefore, a full understanding of the sensing mechanism of tin oxide requires knowledge of the sensor conductivity, electron density and Hall mobility. A tin oxide thin film (1100A thick), derived by the sol-gel method, was deposited on a Si/SiO2 substrate by means of spin coating method. The sol-gel method produces films of porous interconnected nano-sized particles and is relatively inexpensive and easy to produce compared to existing methods of tin oxide thin film deposition. A goal of this study was to determine the compatibility of sol-gel derived tin oxide thin films with silicon based microfabrication procedures. It was determined that conductivity sensitivity is strongly dependant on electron density level and shows very weak dependence on Hall mobility. Lack of Hall mobility sensitivity to H2 concentration suggests that conduction is grain control limited. In this regime, in which the grain size (D) is less than twice the characteristic Debye length (LD), a change in reducing gas concentration results in a nearly simultaneous change in carrier density throughout the entire grain, while the Hall mobility remains unchanged. The sensor calcined at 500°C and operated at 250°C showed maximum conductivity sensitivity to H2 in air. The sensor exhibited a high conductivity sensitivity of 10.6 to 100ppm H2 in air with response time of (˜1) minute and recovery time of (˜4) minutes. Images of the thin film surface, obtained by SEM, were used to study the effects of calcination temperature and operating conditions on the tin oxide structure. Sensitivity decreased as average grain size increased from 7.7nm to 14.7nm, with increasing calcination temperature from 500°C to 800°C. The sensors displayed slight drift in long term baseline stability and good long term sensitivity stability (14 days). Long term operation (30 days) at elevated temperatures had no noticeable effect on the thin film structure.

Oxidation Study of an Ultra High Temperature Ceramic Coatings Based on HfSiCN

NASA Technical Reports Server (NTRS)

Sacksteder, Dagny; Waters, Deborah L.; Zhu, Dongming

2018-01-01

High temperature fiber-reinforced ceramic matrix composites (CMCs) are important for aerospace applications because of their low density, high strength, and significantly higher-temperature capabilities compared to conventional metallic systems. The use of the SiCf/SiC and Cf/SiC CMCs allows the design of lighter-weight, more fuel efficient aircraft engines and also more advanced spacecraft airframe thermal protection systems. However, CMCs have to be protected with advanced environmental barrier coatings when they are incorporated into components for the harsh environments such as in aircraft engine or spacecraft applications. In this study, high temperature oxidation kinetics of an advanced HfSiCN coating on Cf/SiC CMC substrates were investigated at 1300 C, 1400 C, and 1500 C by using thermogravimetric analysis (TGA). The coating oxidation reaction parabolic rate constant and activation energy were estimated from the experimental results. The oxidation reaction studies showed that the coatings formed the most stable, predominant HfSiO4-HfO2 scales at 1400 C. A peroxidation test at 1400 C then followed by subsequent oxidation tests at various temperatures also showed more adherent scales and slower scale growth because of reduced the initial transient oxidation stage and increased HfSiO4-HfO2 content in the scales formed on the HfSiCN coatings.

Review of the BACKONE equation of state and its applications

NASA Astrophysics Data System (ADS)

Lai, Ngoc Anh; Phan, Thi Thu Huong

2017-06-01

This paper presents a review of the BACKONE equation of state (EOS) and its various applications in the study of pure fluid and mixtures as refrigerants, working fluids, natural gases and the study of heat pumps, refrigeration cycles, organic Rankine cycles, trilateral cycles and power flash cycles. It also presents an accurate parameterisation of the BACKONE EOS for the low global warming potential working fluid 3,3,3-trifluoropropene (HFO-1243zf). The average absolute deviations (AAD) between experimental vapour pressure and saturated liquid density data from those of the BACKONE EOS are 0.12% and 0.08%, respectively. The BACKONE EOS for HFO-1243zf also predicts thermodynamic data accurately. The AAD between the BACKONE predicted values and experimental data are 0.20% for sub-cooled liquid density and 0.56% for gaseous pressure.

A longitudinal ecological study of household firearm ownership and firearm-related deaths in the United States from 1999 through 2014: A specific focus on gender, race, and geographic variables.

PubMed

Geier, David A; Kern, Janet K; Geier, Mark R

2017-06-01

Firearms have a longstanding tradition in the United States (US) and are viewed by many with iconic stature with regards to safety and personal freedom. Unfortunately, from a public health point of view, firearm-related deaths (FRDs) in the US have reached a crisis point with an estimated > 31,000 deaths and 74,000 nonfatal injuries resulting from firearms each year. This longitudinal ecological study analyzed variations in FRDs following firearm assaults (FAs) and law enforcement incidents involving a firearm (LEIF) in comparison to variations in household firearm ownership (HFO) among different geographic and demographic groups in the US from 1999 to 2014. The Underlying Cause of Death database was examined on the CDC Wonder online interface. Records coded with ICD-10 codes: FA (X93 - assault by handgun discharge, X94 - assault by rifle, shotgun, and larger firearm discharge, or X95 - assault by other and unspecified firearm discharge) and LEIF (Y35.0) were examined, and the prevalence of HFO was determined using the well-established proxy of the percentage of suicides committed with a firearm. Gender, ethnicity, Census Division, and urbanization significantly impacted the death rates from FA and LEIF. Significant direct correlations between variations in HFO and death rates from FAs and LEIF were observed. Understanding the significant impacts of gender, race, Census Division, and urbanization status may help shape future public health policy to promote increased firearm safety.

Oil and oil dispersant do not cause synergistic toxicity to fish embryos.

PubMed

Adams, Julie; Sweezey, Michael; Hodson, Peter V

2014-01-01

Atlantic herring (Clupea harengus) embryos were exposed to water accommodated fractions (WAFs; oil dissolved in water) and chemically enhanced water accommodated fractions (CEWAFs; oil dispersed in water with Corexit 9500A) of Medium South American (MESA) crude oil. The CEWAF was approximately 100-fold more toxic than WAF based on nominal loadings of test solutions (% v/v). In contrast, the ratio of WAF and CEWAF toxicity expressed as measured oil concentrations approximated 1.0, indicating that the higher toxicity of CEWAFs was caused by an increase in exposure to hydrocarbons with chemical dispersion. In a second experiment, the chronic toxicity of Corexit 9500A and chemically dispersed heavy fuel oil 7102 (HFO 7102) to rainbow trout (Oncorhynchus mykiss) embryos was compared to chemically dispersed Nujol, a nontoxic mineral oil. Dispersant alone was toxic, but caused different signs of toxicity than HFO 7102. Nujol at a dispersant-to-oil ratio of 1:20 was nontoxic, suggesting that dispersant was sequestered by oil and not present at toxic concentrations. In contrast, the same nominal loadings of dispersed HFO 7102 caused concentration-dependent increases in toxicity. Both experiments suggest that chemically dispersed oil was more toxic to fish embryos than solutions created by mechanical mixing due to the increased exposure of fish to petroleum hydrocarbons and not to changes in hydrocarbon toxicity. The Nujol control discriminated between the toxicity of oil and chemical dispersant and would be a practical addition to programs of dispersant testing.

Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serrao, Felcy Jyothi, E-mail: jyothiserrao@gmail.com; Department of Physics, Karnataka Government Research centre SCEM, Mangalore, 575007; Sandeep, K. M.

2016-05-23

Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnOmore » thin films. The minimum resistivity of 2.54 × 10{sup −3} Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.« less

Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4

NASA Astrophysics Data System (ADS)

Shibata, Yosei; Tsutsumi, Jun'ya; Matsuoka, Satoshi; Matsubara, Koji; Yoshida, Yuji; Chikamatsu, Masayuki; Hasegawa, Tatsuo

2015-04-01

We report the fabrication of high quality thin films for semiconducting organic donor-acceptor charge-transfer (CT) compounds, (diC8BTBT)(FnTCNQ) (diC8BTBT = 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and FnTCNQ [n = 0,2,4] = fluorinated derivatives of 7,7,8,8,-tetracyanoquinodimethane), which have a high degree of layered crystallinity. Single-phase and uniaxially oriented polycrystalline thin films of the compounds were obtained by co-evaporation of the component donor and acceptor molecules. Organic thin-film transistors (OTFTs) fabricated with the compound films exhibited n-type field-effect characteristics, showing a mobility of 6.9 × 10-2 cm2/V s, an on/off ratio of 106, a sub-threshold swing of 0.8 V/dec, and an excellent stability in air. We discuss the suitability of strong intermolecular donor-acceptor interaction and the narrow CT gap nature in compounds for stable n-type OTFT operation.

Same Precursor, Two Different Products: Comparing the Structural Evolution of In–Ga–O “Gel-Derived” Powders and Solution-Cast Films Using Pair Distribution Function Analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wood, Suzannah R.; Woods, Keenan N.; Plassmeyer, Paul N.

Amorphous metal oxides are central to a variety of technological applications. In particular, indium gallium oxide has garnered attention as a thin-film transistor channel layer material. In this work we examine the structural evolution of indium gallium oxide gel-derived powders and thin films using infrared vibrational spectroscopy, X-ray diffraction, and pair distribution function (PDF) analysis of X-ray total scattering from standard and normal incidence thin-film geometries (tfPDF). We find that the gel-derived powders and films from the same aqueous precursor evolve differently with temperature, forming mixtures of Ga-substituted In2O3 and In-substituted β-Ga2O3 with different degrees of substitution. X-ray total scatteringmore » and PDF analysis indicate that the majority phase for both the powders and films is an amorphous/nanocrystalline β-Ga2O3 phase, with a minor constituent of In2O3 with significantly larger coherence lengths. This amorphous β-Ga2O3 phase could not be identified using the conventional Bragg diffraction techniques traditionally used to study crystalline metal oxide thin films. The combination of Bragg diffraction and tfPDF provides a much more complete description of film composition and structure, which can be used to detail the effect of processing conditions and structure–property relationships. This study also demonstrates how structural features of amorphous materials, traditionally difficult to characterize by standard diffraction, can be elucidated using tfPDF.« less

Methodology for Producing a Uniform Distribution of UO2 in a Tungsten Matrix

NASA Technical Reports Server (NTRS)

Tucker, Dennis S.; O'Conner, Andrew; Hickman, Rickman; Broadway, Jeramie; Belancik, Grace

2015-01-01

Current work at NASA's Marshall Space Flight Center (MSFC) is focused on the development CERMET fuel materials for Nuclear Thermal Propulsion (NTP). The CERMETs consist of uranium dioxide (UO2) fuel particles embedded in a tungsten (W) metal matrix. Initial testing of W-UO2 samples fabricated from fine angular powders performed reasonably well, but suffered from significant fuel loss during repeated thermal cycling due to agglomeration of the UO2 (1). The blended powder mixtures resulted in a non-uniform dispersion of the UO2 particles in the tungsten matrix, which allows rapid vaporization of the interconnected UO2 from the sample edges into the bulk material. Also, the angular powders create areas of stress concentrations due to thermal expansion mismatch, which eventually cracks the tungsten matrix. Evenly coating spherical UO2 particles with chemical vapor deposited (CVD) tungsten prior to consolidation was previously demonstrated to provide improved performance. However, the CVD processing technology is expensive and not currently available. In order to reduce cost and enhance performance, a powder coating process has been developed at MSFC to produce a uniform distribution of the spherical UO2 particles in a tungsten matrix. The method involves utilization of a polyethylene binder during mixing which leads to fine tungsten powders clinging to the larger UO2 spherical particles. This process was developed using HfO2 as a surrogate for UO2. Enough powder was mixed to make 8 discs (2cm diameter x 8mm thickness) using spark plasma sintering. A uniaxial pressure of 50 MPa was used at four different temperatures (2 samples at each temperature). The first two samples were heated to 1400C and 1500C respectively for 5 minutes. Densities for these samples were less than 85% of theoretical, so the time at temperature was increased to 20 minutes for the remaining samples. The highest densities were achieved for the two samples sintered at 1700C (approx. 92% of theoretical). Scanning electron microscopy (SEM) of the mixed powders and the sintered samples along with energy dispersive x-ray analysis was obtained. The SEM of the powders clearly show the fine W powder adhered to the larger HfO2 particles and a uniform distribution of HfO2 particles in a tungsten matrix upon densification. Vicker's Microhardness testing was also performed on all samples using 0.5, 1.0 and 2.0 kg loads. Five indents were made at each load level. All indents were placed in the tungsten matrix to assist as a proxy in measuring densification. The highest hardness value was obtained for the 1700C specimens. The hardness average for these samples was 312.14 MPa. This powder processing method has been applied to W/UO2 powders with the SEM of the powders appearing similar to the W/HfO2 powder images.

Geometry of Thin Nematic Elastomer Sheets

NASA Astrophysics Data System (ADS)

Aharoni, Hillel; Sharon, Eran; Kupferman, Raz

A thin sheet of nematic elastomer attains 3D configurations depending on the nematic director field upon heating. In this talk we describe the intrinsic geometry of such a sheet, and derive an expression for the metric induced by general smooth nematic director fields. Furthermore, we investigate the reverse problem of constructing a director field that induces a specified 2D geometry. We provide an explicit analytical recipe for constructing any surface of revolution using this method. We demonstrate how the design of an arbitrary 2D geometry is accessible using approximate numerical methods.

Microstructure selection in thin-sample directional solidification of an Al-Cu alloy: In situ X-ray imaging and phase-field simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clarke, A. J.; Tourret, D.; Song, Y.

We study microstructure selection during directional solidification of a thin metallic sample. We combine in situ X-ray radiography of a dilute Al-Cu alloy solidification experiments with three-dimensional phase-field simulations. We explore a range of temperature gradient G and growth velocity V and build a microstructure selection map for this alloy. We investigate the selection of the primary dendritic spacing Lambda and tip radius rho. While rho shows a good agreement between experimental measurements and dendrite growth theory, with rho similar to V-1/2, Lambda is observed to increase with V (partial derivative Lambda/partial derivative V > 0), in apparent disagreement withmore » classical scaling laws for primary dendritic spacing, which predict that partial derivative Lambda/partial derivative V <0. We show through simulations that this trend inversion for Lambda(V) is due to liquid convection in our experiments, despite the thin sample configuration. We use a classical diffusion boundary-layer approximation to semi-quantitatively incorporate the effect of liquid convection into phase-field simulations. This approximation is implemented by assuming complete solute mixing outside a purely diffusive zone of constant thickness that surrounds the solid-liquid interface. This simple method enables us to quantitatively match experimental measurements of the planar morphological instability threshold and primary spacings over an order of magnitude in V. We explain the observed inversion of partial derivative Lambda/partial derivative V by a combination of slow transient dynamics of microstructural homogenization and the influence of the sample thickness.« less