Observation and manipulation of magnetic domains in sol gel derived thin films of spinel ferrites

NASA Astrophysics Data System (ADS)

Datar, Ashwini A.; Mathe, Vikas L.

2017-12-01

Thin films of spinel ferrites, namely zinc substituted nickel, cobalt ferrite, and manganese substituted cobalt ferrite, were synthesized using sol-gel derived spin-coating techniques. The films were characterized using x-ray diffraction, field emission scanning electron microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy techniques for the analysis of structural, morphological and vibrational band transition properties, which confirm the spinel phase formation of the films. The magnetic force microscopy (MFM) technique was used to observe the magnetic domain structure present in the synthesized films. Further, the films were subjected to an external DC magnetic field of 2 kG to orient the magnetic domains and analyzed using an ex situ MFM technique.

Elastic properties of single-walled carbon nanotube thin film by nanoindentation test.

PubMed

Tang, Xingling; El-Hami, Abdelkhalak; El-Hami, Khalil; Eid, Mohamed; Si, Chaorun

2017-09-12

This paper carries out a preliminary study for the elastic properties of single walled carbon nanotube (SWCNT) thin film. The SWCNT thin films (~250 nm) are prepared by a simple and cost effective method of spin-coating technology. Nanoindentation test with a Berkovich indenter is used to determine the hardness and elastic modulus of the SWCNT thin film. It is important to note that the elastic properties of SWCNT film are indirectly derived from the information of load and displacement of the indenter under certain assumptions, deviation of the 'test value' is inevitable. In this regard, uncertainty analysis is an effective process in guarantying the validity of the material properties. This paper carries out uncertainty estimation for the tested elastic properties of SWCNT film by nanoindentation. Experimental results and uncertainty analysis indicates that nanoindentation test could be an effective and reliable method in determine the elastic properties of SWCNT thin film. Moreover, the obtained values of hardness and elastic modulus can further benefit the design of SWCNT thin film based components.

Preparation and Characterization of Ferroelectric BaTi0.91(Hf0.5, Zr0.5)0.09O3 Thin Films by Sol-Gel Process Using Titanium and Zirconium Alkoxides

NASA Astrophysics Data System (ADS)

Thongrueng, Jirawat; Nishio, Keishi; Nagata, Kunihiro; Tsuchiya, Toshio

2000-09-01

Sol-gel-derived BaTi0.91(Hf0.5, Zr0.5)0.09O3 (BTHZ-9) thin films have been successfully prepared on Pt and Pt(111)/Ti/SiO2/Si(100) substrates by spin-coating and sintering from 550 to 900°C for 2 h in oxygen ambient. X-ray diffraction measurement indicated that the single perovskite phase of the BTHZ-9 thin films was obtained at heat treatment above 650°C. The formation temperature of the double-alkoxy-derived BTHZ-9 thin films was lower by at least 80°C than that of the films prepared from only titanium alkoxide. The microstructure of the films was observed by atomic force microscopy and scanning electron microscopy. The grain size of the films increased from 70 to 200 nm with increasing sintering temperature ranging from 650 to 850°C. The maximum peak for the dielectric constant, corresponding to the Curie point (87°C), was broad and lower in magnitude compared with that of the BTHZ-9 bulk ceramics. Tensile stresses resulting from the differences between thermal expansion coefficients of the substrate and the film caused poor electrical properties. BTHZ-9 thin films exhibited a well-saturated polarization-electric field hysteresis loop. The polarization and coercive field for the 850-nm-thick BTHZ-9 thin film prepared on Pt/Ti/SiO2/Si substrate at 750°C were determined to be 8 μC/cm2 and 15 kV/cm, respectively. Those of the BTHZ-9 thin film prepared on Pt substrate at 850°C were found to be 9 μC/cm2 and 18 kV/cm, respectively.

Effect of Fe incorporation on the optical behavior of ZnO thin films prepared by sol-gel derived spin coating techniques

NASA Astrophysics Data System (ADS)

Rakkesh, R. Ajay; Malathi, R.; Balakumar, S.

2013-02-01

In this work, Fe doped Zinc Oxide (ZnO) thin films were fabricated on the glass substrate by sol-gel derived spin coating technique. X-ray Diffraction studies revealed that the obtained pure and Fe doped ZnO thin films were in the wurtzite and spinel phase respectively. The three well defined Raman lines at 432, 543 and 1091 cm-1 also confirmed the lattice structure of the ZnO thin film has wurtzite symmetry. While doping Fe atoms in the ZnO, there was a significant change in the phase from wurtzite to spinel structure; owing to Fe (III) ions being incorporated into the lattice through substitution of Zn (II) ions. Room temperature PL spectra showed that the role of defect mediated red emissions at 612 nm was due to radial recombination of a photogenerated hole with an electron that belongs to the Fe atoms, which were discussed in detail.

Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

NASA Astrophysics Data System (ADS)

Isik, Dilek

This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from electrochemical impedance spectroscopy. In the context of ARTICLE 1, thin film transistors based on soluble pentacene derivatives (prepared by the research group directed by Professor J. Anthony, at the University of Kentucky) were fabricated and characterized. GIXRD results performed on the thin films suggested a molecular arrangement favorable to charge transport in the source-drain direction, with the pi-pi stacking direction perpendicular to the channel. In ARTICLE 1, HMDS-treated SiO 2 substrates were used, to improve the surface coverage and to limit charge trapping at the dielectric surface. AFM showed good film coverage. The transistors showed ambipolar characteristics, attributed to the good matching between Au electrode work function and highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the pentacene derivative. The work reported in ARTICLE 2 deals with pi-conjugated thiopheno-azomethines (both in oligomer and polymer form) and oligothiophene analogues. In the former case, couplings in the polymer are based on azomethine (-N=C-) moieties whereas in the latter case they are based on more conventional protocols (-C=C-). The effect of the coupling protocols on the corresponding thin film transistors behavior was studied. The key conclusion of this study was that thiopheno-azomethines thin films can be effectively incorporated into organic transistors: thin films of oligothiopheno-azomethines and the oligothiophenes exhibit p-type behavior whereas thin films of polythiopheno-azomethine exhibit an ambipolar behavior. The hole mobility of the heat-treated thin films of oligothiopheno-azomethines was three orders of magnitude higher compared to its oligothiophene analogue. AFM, coupled with hyperspectral fluorescence imaging, were used to investigate the micro- and nano-scale surface coverage. For the oligothiopheno-azomethine we were able to quantitatively deduce the surface coverage. To contribute to the exploration of innovative strategies for low power consuming solution based electronics and capitalizing on the expertise of the group in the synthesis of solution deposited WO3 films the electrolyte gating approach was explored in ARTICLE 3. Ionic liquids, that are molten salts at room temperature, were employed as the electrolyte. Ionic liquids are attractive for their low volatility, non-flammability, ionic conductivity and thermal and electrochemical stability. Thin films of WO3 were deposited onto pre-patterned ITO substrates (source-drain interelectrode distance, 1 mm) prepared by wet chemical etching. SEM and AFM showed an interconnected film nanostructure. Electrolyte gated WO3 thin film transistors making use of 1-butyl-3-methyl imidazolium bis(trifluoromethylsulfonyl)imide ([BMIM][TFSI]), 1-butyl-3-methyl imidazolium hexafluoro phosphate ([BMIM][PF6]), and 1-ethyl-3-methyl imidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) showed an n-type transistor behavior. The possibility to obtain WO3 electrolyte gated transistors represents an opportunity to fabricate electronic devices working at relatively low operating voltages (about 1 V) by using simple fabrication techniques.

Synthesis and characterization of spin-coated ZnS thin films

NASA Astrophysics Data System (ADS)

Zaman, M. Burhanuz; Chandel, Tarun; Dehury, Kshetramohan; Rajaram, P.

2018-05-01

In this paper, we report synthesis of ZnS thin films using a sol-gel method. A unique aprotic solvent, dimethlysulphoxide (DMSO) has been used to obtain a homogeneous ZnS gel. Zinc acetate and thiourea were used as the precursor sources for Zn and S, respectively, to deposit nanocrystalline ZnS thin films. Optical, structural and morphological properties of the films were studied. Optical studies reveal high transmittance of the samples over the entire visible region. The energy band gap (Eg) for the ZnS thin films is found to be about 3.6 eV which matches with that of bulk ZnS. The interference fringes in transmissions spectrum show the high quality of synthesized samples. Strong photoluminescence peak in the UV region makes the films suitable for optoelectronic applications. X-ray diffraction studies reveal that sol-gel derived ZnS thin films are polycrystalline in nature with hexagonal structure. SEM studies confirmed that the ZnS films show smooth and uniform grains morphology having size in 20-25 nm range. The EDAX studies confirmed that the films are nearly stoichiometric.

The rigidity and mobility of screw dislocations in a thin film

NASA Astrophysics Data System (ADS)

Wang, Fei

2018-07-01

An equation of screw dislocations in a thin film is derived for arbitrary boundary conditions. The boundary conditions can be the free surface, the fixed surface or the gradient loading imposed on the surface. The new equation makes it possible to study changes in the dislocation structure under various gradient stress applied to the surface. The rigidity and mobility of screw dislocations in a thin film are explored by using the equation. It is found that the screw dislocation core in a thin film is like a Hookean body with a specific shear stress applied to the surface. Free-surface effects on the Peierls stress are investigated and compared with previous studies. An abnormal behavior of the Peierls stress of screw dislocations in a soft-inclusion film between two rigid films is predicted theoretically.

Effect of substrate bending on the piezoelectric measurement of PZT thin film

NASA Astrophysics Data System (ADS)

Xu, Xiaohui; Tang, Jianhong; He, Liangna

2009-05-01

Bonding conditions between PZT thin film and sample holder greatly affect the strain measurement of the PZT sample. The influence of various bonding conditions on the measured displacement were analyzed using finite element analysis (FEA). One-end fixed sample induces the maximum bending displacement. Experiments were performed on sol-gel derived PZT thin film. The voltage-displacement curve and "butterfly" loop were measured using laser Doppler method with phase detection. Experimental results agreed well with the simulated ones. The measured frequency dependence of piezoelectric response of PZT thin film indicated that, if the operating frequency was lower than 2 kHz, good bonding effect could be obtained when the entire back surface of the sample was glued to a rigid supporter using epoxy resin. A simple bonding model which considered the adhesives as a spring was used to estimate the frequency response of PZT thin film sample.

Thermally induced effect on sub-band gap absorption in Ag doped CdSe thin films

NASA Astrophysics Data System (ADS)

Kaur, Jagdish; Sharma, Kriti; Bharti, Shivani; Tripathi, S. K.

2015-05-01

Thin films of Ag doped CdSe have been prepared by thermal evaporation using inert gas condensation (IGC) method taking Argon as inert gas. The prepared thin films are annealed at 363 K for one hour. The sub-band gap absorption spectra in the as deposited and annealed thin films have been studied using constant photocurrent method (CPM). The absorption coefficient in the sub-band gap region is described by an Urbach tail in both as deposited and annealed thin films. The value of Urbach energy and number density of trap states have been calculated from the absorption coefficient in the sub-band gap region which have been found to increase after annealing treatment indicating increase in disorderness in the lattice. The energy distribution of the occupied density of states below Fermi level has also been studied using derivative procedure of absorption coefficient.

Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates

DTIC Science & Technology

2014-09-01

function of heating rate. The FWHM of the Ill PZT texture components is sim 2978 Journal of the American Ceramic Society Mhin et al. Vol. 97, No. 9...Z39.18 ABSTRACT Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates Report Title The crystallization of lead zirconate...phase influencing texture evolution. The results suggest that PZT nucleates directly on Pt, which explains the observation of a more highly oriented

Optical, wetting and electrical properties of functionalized fulleropyrrolidine thin films

NASA Astrophysics Data System (ADS)

Abdulrazack, Parveen; Venkatesan, Sughanya; Chellasamy, Manoharan; Samuthira, Nagarajan

2017-12-01

Fulleropyrrolidine derivatives acts as an electron acceptor in the fabrication of solar cells and other optoelectronic devices. In this investigation thin film of functionalized fulleropyrrolidines were fabricated and studied their photo-physical properties. Surface morphology of the thin films was investigated through AFM and FE-SEM. The results suggested that large dependence on structure vs molecular packing. The long alkyl chain substituted C60 were assembled in the form of nanorods. C60- C60 intermolecular distance were measured, the films were with good absorption and exhibits n-type semiconducting behavior. The films were having high contact angle and can be effectively used for fabricating semiconducting devices with self- cleaning property.

Optical, structural and electrochromic behavior studies on nanocomposite thin film of aniline, o-toluidine and WO3

NASA Astrophysics Data System (ADS)

Najafi-Ashtiani, Hamed; Bahari, Ali

2016-08-01

In the field of materials for electrochromic (EC) applications much attention was paid to the derivatives of aniline. We report on the optical, structural and electrochromic properties of electrochromic thin film based on composite of WO3 nanoparticles and copolymer of aniline and o-toluidine prepared by electrochemical polymerization method on fluorine doped tin oxide (FTO) coated glass. The thin film was studied by X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectroscopy. The morphology of prepared thin film was characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and the thermal gravimetric analysis (TGA) as well. The optical spectra of nanocomposite thin film were characterized in the 200-900 nm wavelength range and EC properties of nanocomposite thin film were studied by cyclic voltammetry (CV). The calculation of optical band gaps of thin film exhibited that the thin film has directly allowed transition with the values of 2.63 eV on first region and 3.80 eV on second region. Dispersion parameters were calculated based on the single oscillator model. Finally, important parameters such as dispersion energy, oscillator energy and lattice dielectric constant were determined and compared with the data from other researchers. The nonlinear optical properties such as nonlinear optical susceptibility, nonlinear absorption coefficient and nonlinear refractive index were extracted. The obtained results of nanocomposite thin film can be useful for the optoelectronic applications.

Carbon nanotube thin film strain sensor models assembled using nano- and micro-scale imaging

NASA Astrophysics Data System (ADS)

Lee, Bo Mi; Loh, Kenneth J.; Yang, Yuan-Sen

2017-07-01

Nanomaterial-based thin films, particularly those based on carbon nanotubes (CNT), have brought forth tremendous opportunities for designing next-generation strain sensors. However, their strain sensing properties can vary depending on fabrication method, post-processing treatment, and types of CNTs and polymers employed. The objective of this study was to derive a CNT-based thin film strain sensor model using inputs from nano-/micro-scale experimental measurements of nanotube physical properties. This study began with fabricating ultra-low-concentration CNT-polymer thin films, followed by imaging them using atomic force microscopy. Image processing was employed for characterizing CNT dispersed shapes, lengths, and other physical attributes, and results were used for building five different types of thin film percolation-based models. Numerical simulations were conducted to assess how the morphology of dispersed CNTs in its 2D matrix affected bulk film electrical and electromechanical (strain sensing) properties. The simulation results showed that CNT morphology had a significant impact on strain sensing performance.

Effects of ion irradiation on the mechanical properties of SiNa wO xC yH z sol-gel derived thin films

NASA Astrophysics Data System (ADS)

Lucca, D. A.; Qi, Y.; Harriman, T. A.; Prenzel, T.; Wang, Y. Q.; Nastasi, M.; Dong, J.; Mehner, A.

2010-10-01

A study of the effects of ion irradiation of hybrid organic/inorganic modified silicate thin films on their mechanical properties is presented. NaOH catalyzed SiNa wO xC yH z thin films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300 °C, the films were irradiated with 125 keV H + or 250 keV N 2+ at fluences ranging from 1 × 10 14 to 2.5 × 10 16 ions/cm 2. Nanoindentation was used to characterize the films. Changes in hardness and reduced elastic modulus were examined as a function of ion fluence and irradiating species. The resulting increases in hardness and reduced elastic modulus are compared to similarly processed acid catalyzed silicate thin films.

Properties of Ferrite Garnet (Bi, Lu, Y)3(Fe, Ga)5O12 Thin Film Materials Prepared by RF Magnetron Sputtering

PubMed Central

Nur-E-Alam, Mohammad; Belotelov, Vladimir; Alameh, Kamal

2018-01-01

This work is devoted to physical vapor deposition synthesis, and characterisation of bismuth and lutetium-substituted ferrite-garnet thin-film materials for magneto-optic (MO) applications. The properties of garnet thin films sputtered using a target of nominal composition type Bi0.9Lu1.85Y0.25Fe4.0Ga1O12 are studied. By measuring the optical transmission spectra at room temperature, the optical constants and the accurate film thicknesses can be evaluated using Swanepoel’s envelope method. The refractive index data are found to be matching very closely to these derived from Cauchy’s dispersion formula for the entire spectral range between 300 and 2500 nm. The optical absorption coefficient and the extinction coefficient data are studied for both the as-deposited and annealed garnet thin-film samples. A new approach is applied to accurately derive the optical constants data simultaneously with the physical layer thickness, using a combination approach employing custom-built spectrum-fitting software in conjunction with Swanepoel’s envelope method. MO properties, such as specific Faraday rotation, MO figure of merit and MO swing factor are also investigated for several annealed garnet-phase films. PMID:29789463

Two-dimensional models for the optical response of thin films

NASA Astrophysics Data System (ADS)

Li, Yilei; Heinz, Tony F.

2018-04-01

In this work, we present a systematic study of 2D optical models for the response of thin layers of material under excitation by normally incident light. The treatment, within the framework of classical optics, analyzes a thin film supported by a semi-infinite substrate, with both the thin layer and the substrate assumed to exhibit local, isotropic linear response. Starting from the conventional three-dimensional (3D) slab model of the system, we derive a two-dimensional (2D) sheet model for the thin film in which the optical response is described by a sheet optical conductivity. We develop criteria for the applicability of this 2D sheet model for a layer with an optical thickness far smaller than the wavelength of the light. We examine in detail atomically thin semi-metallic and semiconductor van-der-Waals layers and ultrathin metal films as representative examples. Excellent agreement of the 2D sheet model with the 3D slab model is demonstrated over a broad spectral range from the radio frequency limit to the near ultraviolet. A linearized version of system response for the 2D model is also presented for the case where the influence of the optically thin layer is sufficiently weak. Analytical expressions for the applicability and accuracy of the different optical models are derived, and the appropriateness of the linearized treatment for the materials is considered. We discuss the advantages, as well as limitations, of these models for the purpose of deducing the optical response function of the thin layer from experiment. We generalize the theory to take into account in-plane anisotropy, layered thin film structures, and more general substrates. Implications of the 2D model for the transmission of light by the thin film and for the implementation of half- and totally absorbing layers are discussed.

Analysis of the Sensing Properties of a Highly Stable and Reproducible Ozone Gas Sensor Based on Amorphous In-Ga-Zn-O Thin Film.

PubMed

Wu, Chiu-Hsien; Jiang, Guo-Jhen; Chang, Kai-Wei; Deng, Zu-Yin; Li, Yu-Ning; Chen, Kuen-Lin; Jeng, Chien-Chung

2018-01-09

In this study, the sensing properties of an amorphous indium gallium zinc oxide (a-IGZO) thin film at ozone concentrations from 500 to 5 ppm were investigated. The a-IGZO thin film showed very good reproducibility and stability over three test cycles. The ozone concentration of 60-70 ppb also showed a good response. The resistance change (Δ R ) and sensitivity ( S ) were linearly dependent on the ozone concentration. The response time ( T 90-res ), recovery time ( T 90-rec ), and time constant (τ) showed first-order exponential decay with increasing ozone concentration. The resistance-time curve shows that the maximum resistance change rate (dRg/dt) is proportional to the ozone concentration during the adsorption. The results also show that it is better to sense rapidly and stably at a low ozone concentration using a high light intensity. The ozone concentration can be derived from the resistance change, sensitivity, response time, time constant (τ), and first derivative function of resistance. However, the time of the first derivative function of resistance is shorter than other parameters. The results show that a-IGZO thin films and the first-order differentiation method are promising candidates for use as ozone sensors for practical applications.

Analysis of the Sensing Properties of a Highly Stable and Reproducible Ozone Gas Sensor Based on Amorphous In-Ga-Zn-O Thin Film

PubMed Central

Wu, Chiu-Hsien; Jiang, Guo-Jhen; Chang, Kai-Wei; Deng, Zu-Yin; Li, Yu-Ning; Chen, Kuen-Lin; Jeng, Chien-Chung

2018-01-01

In this study, the sensing properties of an amorphous indium gallium zinc oxide (a-IGZO) thin film at ozone concentrations from 500 to 5 ppm were investigated. The a-IGZO thin film showed very good reproducibility and stability over three test cycles. The ozone concentration of 60–70 ppb also showed a good response. The resistance change (ΔR) and sensitivity (S) were linearly dependent on the ozone concentration. The response time (T90-res), recovery time (T90-rec), and time constant (τ) showed first-order exponential decay with increasing ozone concentration. The resistance–time curve shows that the maximum resistance change rate (dRg/dt) is proportional to the ozone concentration during the adsorption. The results also show that it is better to sense rapidly and stably at a low ozone concentration using a high light intensity. The ozone concentration can be derived from the resistance change, sensitivity, response time, time constant (τ), and first derivative function of resistance. However, the time of the first derivative function of resistance is shorter than other parameters. The results show that a-IGZO thin films and the first-order differentiation method are promising candidates for use as ozone sensors for practical applications. PMID:29315218

Magnetic field induced switching of the antiferromagnetic order parameter in thin films of magnetoelectric chromia

NASA Astrophysics Data System (ADS)

Fallarino, Lorenzo; Berger, Andreas; Binek, Christian

2015-02-01

A Landau-theoretical approach is utilized to model the magnetic field induced reversal of the antiferromagnetic order parameter in thin films of magnetoelectric antiferromagnets. A key ingredient of this peculiar switching phenomenon is the presence of a robust spin polarized state at the surface of the antiferromagnetic films. Surface or boundary magnetization is symmetry allowed in magnetoelectric antiferromagnets and experimentally established for chromia thin films. It couples rigidly to the antiferromagnetic order parameter and its Zeeman energy creates a pathway to switch the antiferromagnet via magnetic field application. In the framework of a minimalist Landau free energy expansion, the temperature dependence of the switching field and the field dependence of the transition width are derived. Least-squares fits to magnetometry data of (0001 ) textured chromia thin films strongly support this model of the magnetic reversal mechanism.

Nanostructured pyronin Y thin films as a new organic semiconductor: Linear/nonlinear optics, band gap and dielectric properties

NASA Astrophysics Data System (ADS)

Zahran, H. Y.; Yahia, I. S.; Alamri, F. H.

2017-05-01

Pyronin Y dye (PY) is a kind of xanthene derivatives. Thin films of pyronin Y were deposited onto highly cleaned glass substrates using low-cost/spin coating technique. The structure properties of pyronin Y thin films with different thicknesses were investigated by using X-ray diffraction (XRD) and atomic force microscope (AFM). PY thin films for all the studied thicknesses have an amorphous structure supporting the short range order of the grain size. AFM supports the nanostructure with spherical/clusters morphologies of the investigated thin films. The optical constants of pyronin Y thin films for various thicknesses were studied by using UV-vis-NIR spectrophotometer in the wavelength range 350-2500 nm. The transmittance T(λ), reflectance R(λ) spectral and absorbance (abs(λ)) were obtained for all film thicknesses at room temperature and the normal light incident. These films showed a high transmittance in the wide scale wavelengths. For different thicknesses of the studied thin films, the optical band gaps were determined and their values around 2 eV. Real and imaginary dielectric constants, dissipation factor and the nonlinear optical parameters were calculated in the wavelengths to the range 300-2500 nm. The pyronin Y is a new organic semiconductor with a good optical absorption in UV-vis regions and it is suitable for nonlinear optical applications.

Thermochromic properties of W-doped VO2 thin films deposited by aqueous sol-gel method for adaptive infrared stealth application

NASA Astrophysics Data System (ADS)

Liu, Dongqing; Cheng, Haifeng; Xing, Xin; Zhang, Chaoyang; Zheng, Wenwei

2016-07-01

The W doped VO2 thin films with various W contents were successfully deposited by aqueous sol-gel method followed by a post annealing process. The derived thin films were characterized by X-ray diffraction, Raman spectra, scanning electron microscopy and atomic force microscopy. Besides, the resistance-temperature relationship and infrared emissivity in the waveband 7.5-14 μm were analyzed, and the effects of W doping on the thermochromic properties of VO2 thin films were studied. The results show that W atoms enter the crystal lattice of VO2 and the transition temperature decreases gradually with increasing doping amount of W. The emissivity of VO2-W-4% thin films has dropped to 0.4 when its real temperature is above 30 °C. The thermal infrared images were also examined under different temperature by thermal imager. The results indicate that the temperature under which W doped VO2 thin films begin to have lower emissivity decreases gradually with increasing doping amount of W. W doped VO2 thin films can control its infrared radiation intensity actively at a lower temperature level of 30 °C, which has great application prospects in the adaptive infrared stealth technology.

Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering

DOE PAGES

Zhang, Steven S. -L.; Heinonen, Olle

2018-04-02

In this paper, we study the topological Hall (TH) effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin-diffusion equation is derived which contains an additional source term associated with the gradient of the emergent magnetic field that arises from skyrmions. Because of the source term, spin accumulation may build up in the vicinity of the skyrmions. This gives rise to a spin-polarized diffusion current that in general suppresses the bulk TH current. Only when the spin-diffusion length is much smaller than the skyrmion size does themore » TH resistivity approach the value derived by Bruno et al. [Phys. Rev. Lett. 93, 096806 (2004)]. Finally, we derive a general expression of the TH resistivity that applies to thin-film geometries with spin-flip scattering, and show that the corrections to the TH resistivity become large when the size of room temperature skyrmions is further reduced to tens of nanometers.« less

Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Steven S. -L.; Heinonen, Olle

In this paper, we study the topological Hall (TH) effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin-diffusion equation is derived which contains an additional source term associated with the gradient of the emergent magnetic field that arises from skyrmions. Because of the source term, spin accumulation may build up in the vicinity of the skyrmions. This gives rise to a spin-polarized diffusion current that in general suppresses the bulk TH current. Only when the spin-diffusion length is much smaller than the skyrmion size does themore » TH resistivity approach the value derived by Bruno et al. [Phys. Rev. Lett. 93, 096806 (2004)]. Finally, we derive a general expression of the TH resistivity that applies to thin-film geometries with spin-flip scattering, and show that the corrections to the TH resistivity become large when the size of room temperature skyrmions is further reduced to tens of nanometers.« less

Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering

NASA Astrophysics Data System (ADS)

Zhang, Steven S.-L.; Heinonen, Olle

2018-04-01

We study the topological Hall (TH) effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin-diffusion equation is derived which contains an additional source term associated with the gradient of the emergent magnetic field that arises from skyrmions. Because of the source term, spin accumulation may build up in the vicinity of the skyrmions. This gives rise to a spin-polarized diffusion current that in general suppresses the bulk TH current. Only when the spin-diffusion length is much smaller than the skyrmion size does the TH resistivity approach the value derived by Bruno et al. [Phys. Rev. Lett. 93, 096806 (2004), 10.1103/PhysRevLett.93.096806]. We derive a general expression of the TH resistivity that applies to thin-film geometries with spin-flip scattering, and show that the corrections to the TH resistivity become large when the size of room temperature skyrmions is further reduced to tens of nanometers.

Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering.

PubMed

Park, Gi Soon; Chu, Van Ben; Kim, Byoung Woo; Kim, Dong-Wook; Oh, Hyung-Suk; Hwang, Yun Jeong; Min, Byoung Koun

2018-03-28

An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se) 2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu 2- x Se-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J- V- T analysis.

New organic semiconductor thin film derived from p-toluidine monomer

NASA Astrophysics Data System (ADS)

Al-Hossainy, A. F.; Zoromba, M. Sh

2018-03-01

p-Toluidine was used as a precursor to synthesize new organic compound [(E)-4-methyl-N1-((E)-4-methyl-6-(p-tolylimino) cyclohex-3-en-1-ylidene)-N2-(p-tolyl) benzene-1,2-diamine] (MBD) by oxidative reaction via potassium dichromate as oxidizing agent at room temperature. Spin coater was used to fabricate nano-size crystalline thin film of the MBD with thickness 73 nm. The characterizations of the MBD powder and thin film have been described by various techniques including Fourier Transform Infrared (FT-IR), Mass Spectra, X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), UV-Visible measurements and Atomic Force Microscope (AFM). The results revealed that the MBD as an organic material is semi-crystalline containing benzenoid (Bensbnd Nsbnd Ben) and quinonoid (Quin = N = Quin) structures. Various optical constants such as refractive index (n), and the absorption index, (k) of the MBD thin film were determined. The effect of temperature on the electrical resistivity of MBD film was studied by a Keithley 6517B electrometer. The energy band gap value of the MBD thin film was found to be 2.24 eV. Thus, MBD is located in the semiconductor materials range. In addition, structural and optical mechanisms of MBD nanostructured thin film were investigated. The obtained results illustrate the possibility of controlling the organic semiconductor MBD thin film for the optoelectronic applications.

Impact of nanostructured thin ZnO film in ultraviolet protection

PubMed Central

Sasani Ghamsari, Morteza; Alamdari, Sanaz; Han, Wooje; Park, Hyung-Ho

2017-01-01

Nanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured thin ZnO films and long-term effects of UV-radiation exposure have not been studied yet. In this study, we investigated the UV-protection ability of sol gel-derived thin ZnO films after different exposure times. Scanning electron microscopy, atomic force microscopy, and UV-visible optical spectroscopy were carried out to study the structure and optical properties of the ZnO films as a function of the UV-irradiation time. The results obtained showed that the prepared thin ZnO films were somewhat transparent under the visible wavelength region and protective against UV radiation. The UV-protection factor was 50+ for the prepared samples, indicating that they were excellent UV protectors. The deposited thin ZnO films demonstrated promising antibacterial potential and significant light absorbance in the UV range. The experimental results suggest that the synthesized samples have potential for applications in the health care field. PMID:28096668

Impact of nanostructured thin ZnO film in ultraviolet protection.

PubMed

Sasani Ghamsari, Morteza; Alamdari, Sanaz; Han, Wooje; Park, Hyung-Ho

2017-01-01

Nanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured thin ZnO films and long-term effects of UV-radiation exposure have not been studied yet. In this study, we investigated the UV-protection ability of sol gel-derived thin ZnO films after different exposure times. Scanning electron microscopy, atomic force microscopy, and UV-visible optical spectroscopy were carried out to study the structure and optical properties of the ZnO films as a function of the UV-irradiation time. The results obtained showed that the prepared thin ZnO films were somewhat transparent under the visible wavelength region and protective against UV radiation. The UV-protection factor was 50+ for the prepared samples, indicating that they were excellent UV protectors. The deposited thin ZnO films demonstrated promising antibacterial potential and significant light absorbance in the UV range. The experimental results suggest that the synthesized samples have potential for applications in the health care field.

Understanding of the development of in-plane residual stress in sol-gel-derived metal oxide thin films

NASA Astrophysics Data System (ADS)

Ohno, Kentaro; Uchiyama, Hiroaki; Kozuka, Hiromitsu

2012-01-01

The in-plane residual stress in thin films greatly affects their properties and functionality as well as the substrate bending, and hence is an important factor to be controlled. In order to obtain general knowledge on the development of residual stress in sol-gel-derived oxide thin films, the in-plane residual stress was measured for yttria stabilized zirconia gel films on Si(100) wafers as a function of firing temperature by measuring the substrate curvature. The films showed a rather complex variation in residual stress, and the mechanism of the residual stress evolution was discussed, referencing the intrinsic stress and the x-ray diffraction data. At low annealing temperatures of 100-200 °C, the residual tensile stress decreased and became compressive partially due to the structural relaxation occurring during cooling. When the firing temperature was increased over 200 °C, the residual stress turned tensile, and increased with increasing annealing temperature, which was attributed to the increase in intrinsic stress due to film densification as well as to the reduced structural relaxation due to the progress of densification. The residual tensile stress slightly decreased at firing temperatures of 500-600 °C, which was attributed to the reduction in intrinsic stress due to thermally activated atomic diffusion as well as to emergence of thermal stress. At firing temperature over 600 °C, the residual tensile stress increased again, which was attributed to the increase in thermal stress generated during cooling due to the increased Young's modulus of the film. Although appearing to be complicated, the whole variation of residual stress with firing temperature could be understood in terms of film densification, structural relaxation, atomic diffusion, progress of crystallization and thermal strain. The illustration presented in the work may provide a clear insight on how the residual stress could be developed in a variety of functional sol-gel-derived, crystalline oxide thin films.

Thermal annealing induced structural and optical properties of Se{sub 72}Te{sub 25}In{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathak, H. P.; Dwivedi, D. K., E-mail: todkdwivedi@gmail.com; Shukla, Nitesh

2016-05-06

Thin films of a- Se{sub 72}Te{sub 25}In{sub 3} were prepared by vacuum evaporation technique in a base pressure of 10{sup -6} Torr on to well cleaned glass substrate. a-Se{sub 72}Te{sub 25}In{sub 3} thin films were annealed at different temperatures below their crystallization temperatures for 2h. The structural analysis of the films has been investigated using X-ray diffraction technique. The optical absorption spectra of these films were measured in the wavelength range 400-1100 nm in order to derive the absorption coefficient of these films. The optical band gap of as prepared and annealed films as a function of photon energy hasmore » been studied. It has been found that the optical band gap decreases with increasing annealing temperatures in the present system.« less

A Soluble Dynamic Complex Strategy for the Solution-Processed Fabrication of Organic Thin-Film Transistors of a Boron-Containing Polycyclic Aromatic Hydrocarbon.

PubMed

Matsuo, Kyohei; Saito, Shohei; Yamaguchi, Shigehiro

2016-09-19

The solution-processed fabrication of thin films of organic semiconductors enables the production of cost-effective, large-area organic electronic devices under mild conditions. The formation/dissociation of a dynamic B-N coordination bond can be used for the solution-processed fabrication of semiconducting films of polycyclic aromatic hydrocarbon (PAH) materials. The poor solubility of a boron-containing PAH in chloroform, toluene, and chlorobenzene was significantly improved by addition of minor amounts (1 wt % of solvent) of pyridine derivatives, as their coordination to the boron atom suppresses the inherent propensity of the PAHs to form π-stacks. Spin-coating solutions of the thus formed Lewis acid-base complexes resulted in the formation of amorphous thin films, which could be converted into polycrystalline films of the boron-containing PAH upon thermal annealing. Organic thin-film transistors prepared by this solution process displayed typical p-type characteristics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Damping factor estimation using spin wave attenuation in permalloy film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manago, Takashi, E-mail: manago@fukuoka-u.ac.jp; Yamanoi, Kazuto; Kasai, Shinya

2015-05-07

Damping factor of a Permalloy (Py) thin film is estimated by using the magnetostatic spin wave propagation. The attenuation lengths are obtained by the dependence of the transmission intensity on the antenna distance, and decrease with increasing magnetic fields. The relationship between the attenuation length, damping factor, and external magnetic field is derived theoretically, and the damping factor was determined to be 0.0063 by fitting the magnetic field dependence of the attenuation length, using the derived equation. The obtained value is in good agreement with the general value of Py. Thus, this estimation method of the damping factor using spinmore » waves attenuation can be useful tool for ferromagnetic thin films.« less

Paper-Thin Plastic Film Soaks Up Sun to Create Solar Energy

NASA Technical Reports Server (NTRS)

2006-01-01

A non-crystallized silicon known as amorphous silicon is the semiconductor material most frequently chosen for deposition, because it is a strong absorber of light. According to the U.S. Department of Energy, amorphous silicon absorbs solar radiation 40 times more efficiently than single-crystal silicon, and a thin film only about 1-micrometer (one one-millionth of a meter) thick containing amorphous silicon can absorb 90 percent of the usable light energy shining on it. Peak efficiency and significant reduction in the use of semiconductor and thin film materials translate directly into time and money savings for manufacturers. Thanks in part to NASA, thin film solar cells derived from amorphous silicon are gaining more and more attention in a market that has otherwise been dominated by mono- and poly-crystalline silicon cells for years. At Glenn Research Center, the Photovoltaic & Space Environments Branch conducts research focused on developing this type of thin film solar cell for space applications. Placing solar cells on thin film materials provides NASA with an attractively priced solution to fabricating other types of solar cells, given that thin film solar cells require significantly less semiconductor material to generate power. Using the super-lightweight solar materials also affords NASA the opportunity to cut down on payload weight during vehicle launches, as well as the weight of spacecraft being sent into orbit.

Effect of Annealing Temperature on Structural and Optical Properties of Sol-Gel-Derived ZnO Thin Films

NASA Astrophysics Data System (ADS)

Arif, Mohd.; Sanger, Amit; Vilarinho, Paula M.; Singh, Arun

2018-04-01

Nanocrystalline ZnO thin films were deposited on glass substrate via sol-gel dip-coating technique then annealed at 300°C, 400°C, and 500°C for 1 h. Their optical, structural, and morphological properties were studied using ultraviolet-visible (UV-Vis) spectrophotometry, x-ray diffraction (XRD) analysis, and scanning electron microscopy (SEM). XRD diffraction revealed that the crystalline nature of the thin films increased with increasing annealing temperature. The c-axis orientation improved, and the grain size increased, as indicated by increased intensity of the (002) plane peak at 2θ = 34.42° corresponding to hexagonal ZnO crystal. The average crystallite size of the thin films ranged from 13 nm to 23 nm. Increasing the annealing temperature resulted in larger crystallite size and higher crystallinity with increased surface roughness. The grain size according to SEM analysis was in good agreement with the x-ray diffraction data. The optical bandgap of the thin films narrowed with increasing annealing temperature, lying in the range of 3.14 eV to 3.02 eV. The transmission of the thin films was as high as 94% within the visible region. The thickness of the thin films was 400 nm, as measured by ellipsometry, after annealing at the different temperatures of 300°C, 400°C, and 500°C.

Analysis of Zinc Oxide Thin Films Synthesized by Sol-Gel via Spin Coating

NASA Astrophysics Data System (ADS)

Wolgamott, Jon Carl

Transparent conductive oxides are gaining an increasingly important role in optoelectronic devices such as solar cells. Doped zinc oxide is a candidate as a low cost and nontoxic alternative to tin doped indium oxide. Lab results have shown that both n-type and p-type zinc oxide can be created on a small scale. This can allow zinc oxide to be used as either an electrode as well as a buffer layer to increase efficiency and protect the active layer in solar cells. Sol-gel synthesis is emerging as a low temperature, low cost, and resource efficient alternative to producing transparent conducting oxides such as zinc oxide. For sol-gel derived zinc oxide thin films to reach their potential, research in this topic must continue to optimize the known processing parameters and expand to new parameters to tighten control and create novel processing techniques that improve performance. The processing parameters of drying and annealing temperatures as well as cooling rate were analyzed to see their effect on the structure of the prepared zinc oxide thin films. There were also preliminary tests done to modify the sol-gel process to include silver as a dopant to produce a p-type thin film. The results from this work show that the pre- and post- heating temperatures as well as the cooling rate all play their own unique role in the crystallization of the film. Results from silver doping show that more work needs to be done to create a sol-gel derived p-type zinc oxide thin film.

Same Precursor, Two Different Products: Comparing the Structural Evolution of In–Ga–O “Gel-Derived” Powders and Solution-Cast Films Using Pair Distribution Function Analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wood, Suzannah R.; Woods, Keenan N.; Plassmeyer, Paul N.

Amorphous metal oxides are central to a variety of technological applications. In particular, indium gallium oxide has garnered attention as a thin-film transistor channel layer material. In this work we examine the structural evolution of indium gallium oxide gel-derived powders and thin films using infrared vibrational spectroscopy, X-ray diffraction, and pair distribution function (PDF) analysis of X-ray total scattering from standard and normal incidence thin-film geometries (tfPDF). We find that the gel-derived powders and films from the same aqueous precursor evolve differently with temperature, forming mixtures of Ga-substituted In2O3 and In-substituted β-Ga2O3 with different degrees of substitution. X-ray total scatteringmore » and PDF analysis indicate that the majority phase for both the powders and films is an amorphous/nanocrystalline β-Ga2O3 phase, with a minor constituent of In2O3 with significantly larger coherence lengths. This amorphous β-Ga2O3 phase could not be identified using the conventional Bragg diffraction techniques traditionally used to study crystalline metal oxide thin films. The combination of Bragg diffraction and tfPDF provides a much more complete description of film composition and structure, which can be used to detail the effect of processing conditions and structure–property relationships. This study also demonstrates how structural features of amorphous materials, traditionally difficult to characterize by standard diffraction, can be elucidated using tfPDF.« less

Pathways to Mesoporous Resin/Carbon Thin Films with Alternating Gyroid Morphology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Qi; Matsuoka, Fumiaki; Suh, Hyo Seon

Three-dimensional (3D) mesoporous thin films with sub-100 nm periodic lattices are of increasing interest as templates for a number of nanotechnology applications, yet are hard to achieve with conventional top-down fabrication methods. Block copolymer self-assembly derived mesoscale structures provide a toolbox for such 3D template formation. In this work, single (alternating) gyroidal and double gyroidal mesoporous thin-film structures are achieved via solvent vapor annealing assisted co-assembly of poly(isoprene-block-styrene-block-ethylene oxide) (PI-b-PS-b-PEO, ISO) and resorcinol/phenol formaldehyde resols. In particular, the alternating gyroid thin-film morphology is highly desirable for potential template backfilling processes as a result of the large pore volume fraction. Inmore » situ grazing-incidence small-angle X-ray scattering during solvent annealing is employed as a tool to elucidate and navigate the pathway complexity of the structure formation processes. The resulting network structures are resistant to high temperatures provided an inert atmosphere. The thin films have tunable hydrophilicity from pyrolysis at different temperatures, while pore sizes can be tailored by varying ISO molar mass. A transfer technique between substrates is demonstrated for alternating gyroidal mesoporous thin films, circumventing the need to re-optimize film formation protocols for different substrates. Increased conductivity after pyrolysis at high temperatures demonstrates that these gyroidal mesoporous resin/carbon thin films have potential as functional 3D templates for a number of nanomaterials applications.« less

Kinetic Studies on Photodeposition of Polydiacetylene Thin Film from Solution: Preliminary Determination of the Rate Law

NASA Technical Reports Server (NTRS)

Paley, M. S.; Armstrong, S.; Witherow, W. K.; Frazier, D. O.

1996-01-01

Preliminary kinetic studies were undertaken on the photodeposition of thin films of a polydiacetylene derivative of 2-methyl-4-nitroaniline from monomer solutions onto quartz substrates. Solutions of the monomer, DAMNA, in 1,2-dichloroethane at various concentrations were irradiated at 364 nm using an argon-ion laser at several intensities. It was found that the rate of polydiacetylene (PDAMNA) film photodeposition varies linearly with UV light intensity and as the square root of monomer concentration.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

PubMed

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-04-28

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.

Optoelectronic properties of novel amorphous CuAlO2/ZnO NWs based heterojunction

NASA Astrophysics Data System (ADS)

Bu, Ian Y. Y.

2013-08-01

Amorphous p-type CuAlO2 thin films were grown onto n-type crystalline ZnO NWs forming a heterojunction through the combination of sol-gel process and hydrothermal growth method. The effects of temperature on structure and optoelectronic properties of CuAlO2 thin films were investigated through various measurement techniques. It was found that the derived CuAlO2 is Al-rich with thin film. UV-Vis measurements showed that the deposited CuAlO2 films are semi-transparent with maximum transmittance ∼82% at 500 nm. Electrical characterization and integration into pn junction confirms that the amorphous CuAlO2 is p-type and exhibited photovoltaic behavior.

Probing localized strain in solution-derived YB a2C u3O7 -δ nanocomposite thin films

NASA Astrophysics Data System (ADS)

Guzman, Roger; Gazquez, Jaume; Mundet, Bernat; Coll, Mariona; Obradors, Xavier; Puig, Teresa

2017-07-01

Enhanced pinning due to nanoscale strain is unique to the high-Tc cuprates, where pairing may be modified with lattice distortion. Therefore a comprehensive understanding of the defect landscape is required for a broad range of applications. However, determining the type and distribution of defects and their associated strain constitutes a critical task, and for this aim, real-space techniques for atomic resolution characterization are necessary. Here, we use scanning transmission electron microscopy (STEM) to study the atomic structure of individual defects of solution-derived YB a2C u3O7 (YBCO) nanocomposites, where the inclusion of incoherent secondary phase nanoparticles within the YBCO matrix dramatically increases the density of Y1B a2C u4O8 (Y124) intergrowths, the commonest defect in YBCO thin films. The formation of the Y124 is found to trigger a concatenation of strain-derived interactions with other defects and the concomitant nucleation of intrinsic defects, which weave a web of randomly distributed nanostrained regions that profoundly transform the vortex-pinning landscape of the YBCO nanocomposite thin films.

Smooth deuterated cellulose films for the visualisation of adsorbed bio-macromolecules

PubMed Central

Su, Jielong; Raghuwanshi, Vikram S.; Raverty, Warwick; Garvey, Christopher J.; Holden, Peter J.; Gillon, Marie; Holt, Stephen A.; Tabor, Rico; Batchelor, Warren; Garnier, Gil

2016-01-01

Novel thin and smooth deuterated cellulose films were synthesised to visualize adsorbed bio-macromolecules using contrast variation neutron reflectivity (NR) measurements. Incorporation of varying degrees of deuteration into cellulose was achieved by growing Gluconacetobacter xylinus in deuterated glycerol as carbon source dissolved in growth media containing D2O. The derivative of deuterated cellulose was prepared by trimethylsilylation(TMS) in ionic liquid(1-butyl-3-methylimidazolium chloride). The TMS derivative was dissolved in toluene for thin film preparation by spin-coating. The resulting film was regenerated into deuterated cellulose by exposure to acidic vapour. A common enzyme, horseradish peroxidase (HRP), was adsorbed from solution onto the deuterated cellulose films and visualized by NR. The scattering length density contrast of the deuterated cellulose enabled accurate visualization and quantification of the adsorbed HRP, which would have been impossible to achieve with non-deuterated cellulose. The procedure described enables preparing deuterated cellulose films that allows differentiation of cellulose and non-deuterated bio-macromolecules using NR. PMID:27796332

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors.

PubMed

Althagafi, Talal M; Algarni, Saud A; Al Naim, Abdullah; Mazher, Javed; Grell, Martin

2015-12-14

We significantly improved the performance of precursor-route semiconducting zinc oxide (ZnO) films in electrolyte-gated thin film transistors (TFTs). We find that the organic precursor to ZnO, zinc acetate (ZnAc), dissolves more readily in a 1 : 1 mixture of ethanol (EtOH) and acetone than in pure EtOH, pure acetone, or pure isopropanol. XPS and SEM characterisation show improved morphology of ZnO films converted from a mixed solvent cast ZnAc precursor compared to the EtOH cast precursor. When gated with a biocompatible electrolyte, phosphate buffered saline (PBS), ZnO thin film transistors (TFTs) derived from mixed solvent cast ZnAc give 4 times larger field effect current than similar films derived from ZnAc cast from pure EtOH. The sheet resistance at VG = VD = 1 V is 30 kΩ □(-1), lower than for any organic TFT, and lower than for any electrolyte-gated ZnO TFT reported to date.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Modeling solvent evaporation during thin film formation in phase separating polymer mixtures

DOE PAGES

Cummings, John; Lowengrub, John S.; Sumpter, Bobby G.; ...

2018-02-09

Preparation of thin films by dissolving polymers in a common solvent followed by evaporation of the solvent has become a routine processing procedure. However, modeling of thin film formation in an evaporating solvent has been challenging due to a need to simulate processes at multiple length and time scales. In this paper, we present a methodology based on the principles of linear non-equilibrium thermodynamics, which allows systematic study of various effects such as the changes in the solvent properties due to phase transformation from liquid to vapor and polymer thermodynamics resulting from such solvent transformations. The methodology allows for themore » derivation of evaporative flux and boundary conditions near each surface for simulations of systems close to the equilibrium. We apply it to study thin film microstructural evolution in phase segregating polymer blends dissolved in a common volatile solvent and deposited on a planar substrate. Finally, effects of the evaporation rates, interactions of the polymers with the underlying substrate and concentration dependent mobilities on the kinetics of thin film formation are studied.« less

Modeling solvent evaporation during thin film formation in phase separating polymer mixtures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cummings, John; Lowengrub, John S.; Sumpter, Bobby G.

Preparation of thin films by dissolving polymers in a common solvent followed by evaporation of the solvent has become a routine processing procedure. However, modeling of thin film formation in an evaporating solvent has been challenging due to a need to simulate processes at multiple length and time scales. In this paper, we present a methodology based on the principles of linear non-equilibrium thermodynamics, which allows systematic study of various effects such as the changes in the solvent properties due to phase transformation from liquid to vapor and polymer thermodynamics resulting from such solvent transformations. The methodology allows for themore » derivation of evaporative flux and boundary conditions near each surface for simulations of systems close to the equilibrium. We apply it to study thin film microstructural evolution in phase segregating polymer blends dissolved in a common volatile solvent and deposited on a planar substrate. Finally, effects of the evaporation rates, interactions of the polymers with the underlying substrate and concentration dependent mobilities on the kinetics of thin film formation are studied.« less

Characterization methodology for lead zirconate titanate thin films with interdigitated electrode structures

NASA Astrophysics Data System (ADS)

Nigon, R.; Raeder, T. M.; Muralt, P.

2017-05-01

The accurate evaluation of ferroelectric thin films operated with interdigitated electrodes is quite a complex task. In this article, we show how to correct the electric field and the capacitance in order to obtain identical polarization and CV loops for all geometrical variants. The simplest model is compared with corrections derived from Schwartz-Christoffel transformations, and with finite element simulations. The correction procedure is experimentally verified, giving almost identical curves for a variety of gaps and electrode widths. It is shown that the measured polarization change corresponds to the average polarization change in the center plane between the electrode fingers, thus at the position where the electric field is most homogeneous with respect to the direction and size. The question of maximal achievable polarization in the various possible textures, and compositional types of polycrystalline lead zirconate titanate thin films is revisited. In the best case, a soft (110) textured thin film with the morphotropic phase boundary composition should yield a value of 0.95Ps, and in the worst case, a rhombohedral (100) textured thin film should deliver a polarization of 0.74Ps.

Fabrication of Nanosized Island-Like CdO Crystallites-Decorated TiO₂ Rod Nanocomposites via a Combinational Methodology and Their Low-Concentration NO₂ Gas-Sensing Behavior.

PubMed

Liang, Yuan-Chang; Xu, Nian-Cih; Wang, Chein-Chung; Wei, Da-Hua

2017-07-10

TiO₂-CdO composite rods were synthesized through a hydrothermal method and sputtering thin-film deposition. The hydrothermally derived TiO₂ rods exhibited a rectangular cross-sectional crystal feature with a smooth surface, and the as-synthesized CdO thin film exhibited a rounded granular surface feature. Structural analyses revealed that the CdO thin film sputtered onto the surfaces of the TiO₂ rods formed a discontinuous shell layer comprising many island-like CdO crystallites. The TiO₂-CdO composite rods were highly crystalline, and their surfaces were rugged. A comparison of the NO₂ gas-sensing properties of the CdO thin film, TiO₂ rods, and TiO₂-CdO composite rods revealed that the composite rods exhibited superior gas-sensing responses to NO₂ gas than did the CdO thin film and TiO 2 rods, which can be attributed to the microstructural differences and the formation of heterojunctions between the TiO₂ core and CdO crystallites.

The 3D modeling of high numerical aperture imaging in thin films

NASA Technical Reports Server (NTRS)

Flagello, D. G.; Milster, Tom

1992-01-01

A modelling technique is described which is used to explore three dimensional (3D) image irradiance distributions formed by high numerical aperture (NA is greater than 0.5) lenses in homogeneous, linear films. This work uses a 3D modelling approach that is based on a plane-wave decomposition in the exit pupil. Each plane wave component is weighted by factors due to polarization, aberration, and input amplitude and phase terms. This is combined with a modified thin-film matrix technique to derive the total field amplitude at each point in a film by a coherent vector sum over all plane waves. Then the total irradiance is calculated. The model is used to show how asymmetries present in the polarized image change with the influence of a thin film through varying degrees of focus.

Instability, rupture and fluctuations in thin liquid films: Theory and computations

NASA Astrophysics Data System (ADS)

Gvalani, Rishabh; Duran-Olivencia, Miguel; Kalliadasis, Serafim; Pavliotis, Grigorios

2017-11-01

Thin liquid films are ubiquitous in natural phenomena and technological applications. They are commonly studied via deterministic hydrodynamic equations, but thermal fluctuations often play a crucial role that still needs to be understood. An example of this is dewetting, which involves the rupture of a thin liquid film and the formation of droplets. Such a process is thermally activated and requires fluctuations to be taken into account self-consistently. Here we present an analytical and numerical study of a stochastic thin-film equation derived from first principles. We scrutinise the behaviour of the stochastic thin film equation in the limit of perfectly correlated noise along the wall-normal direction. We also perform Monte Carlo simulations of the stochastic equation by adopting a numerical scheme based on a spectral collocation method. The numerical scheme allows us to explore the fluctuating dynamics of the thin film and the behaviour of the system's free energy close to rupture. Finally, we also study the effect of the noise intensity on the rupture time, which is in good agreement with previous works. Imperial College London (ICL) President's PhD Scholarship; European Research Council Advanced Grant No. 247031; EPSRC Grants EP/L025159, EP/L020564, EP/P031587, EP/L024926, and EP/L016230/1.

Effect of scanning speed on continuous wave laser scribing of metal thin films: theory and experiment

NASA Astrophysics Data System (ADS)

Shahbazi, AmirHossein; Koohian, Ata; Madanipour, Khosro

2017-01-01

In this paper continuous wave laser scribing of the metal thin films have been investigated theoretically and experimentally. A formulation is presented based on parameters like beam power, spot size, scanning speed and fluence thresholds. The role of speed on the transient temperature and tracks width is studied numerically. By using two frameworks of pulsed laser ablation of thin films and laser printing on paper, the relation between ablation width and scanning speed has been derived. Furthermore, various speeds of the focused 450 nm continuous laser diode with an elliptical beam spot applied to a 290 nm copper thin film coated on glass, experimentally. The beam power was 150 mW after spatial filtering. By fitting the theoretical formulation to the experimental data, the threshold fluence and energy were obtained to be 13.2 J mm-2 and 414~μ J respectively. An anticipated theoretical parameter named equilibrium~border was verified experimentally. It shows that in the scribing of the 290 nm copper thin film, at a distance where the intensity reaches about 1/e of its maximum value, the absorbed fluence on the surface is equal to zero. Therefore the application of continuous laser in metal thin film ablation has different mechanism from pulsed laser drilling and beam scanning in printers.

Carbon nanotube thin film strain sensors: comparison between experimental tests and numerical simulations

NASA Astrophysics Data System (ADS)

Lee, Bo Mi; Loh, Kenneth J.

2017-04-01

Carbon nanotubes can be randomly deposited in polymer thin film matrices to form nanocomposite strain sensors. However, a computational framework that enables the direct design of these nanocomposite thin films is still lacking. The objective of this study is to derive an experimentally validated and two-dimensional numerical model of carbon nanotube-based thin film strain sensors. This study consisted of two parts. First, multi-walled carbon nanotube (MWCNT)-Pluronic strain sensors were fabricated using vacuum filtration, and their physical, electrical, and electromechanical properties were evaluated. Second, scanning electron microscope images of the films were used for identifying topological features of the percolated MWCNT network, where the information obtained was then utilized for developing the numerical model. Validation of the numerical model was achieved by ensuring that the area ratios (of MWCNTs relative to the polymer matrix) were equivalent for both the experimental and modeled cases. Strain sensing behavior of the percolation-based model was simulated and then compared to experimental test results.

Evaluation of pulsed laser deposited SrNb0.1Co0.9O3-δ thin films as promising cathodes for intermediate-temperature solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Chen, Dengjie; Chen, Chi; Gao, Yang; Zhang, Zhenbao; Shao, Zongping; Ciucci, Francesco

2015-11-01

SrNb0.1Co0.9O3-δ (SNC) thin films prepared on single-crystal yttria-stabilized zirconia (YSZ) electrolytes are evaluated as promising cathodes for intermediate-temperature solid oxide fuel cells (IT-SOFCs). Geometrically well-defined polycrystalline SNC thin films with low surface roughness and high surface oxygen vacancy concentration are successfully fabricated by pulsed laser deposition. The thin films are characterized by basic techniques, e.g., X-ray diffraction for phase structure identification, scanning electron microscopy and atomic force microscopy for microstructures measurement, and X-ray photoelectron spectroscopy for elements quantification. Electrochemical impedance spectroscopy (EIS) is used to investigate oxygen reduction reaction activities of SNC thin films in symmetric electrochemical cells. Current collectors (Ag paste, Ag strip, and Au strip) are found to have negligible impact on polarization resistances. A slight decrease of the electrode polarization resistances is observed after adding a samarium doped ceria (SDC) buffer layer between SNC and YSZ. SNC thin-film electrodes exhibit low electrode polarization resistances, e.g., 0.237 Ω cm2 (SNC/SDC/YSZ/SDC/SNC) and 0.274 Ω cm2 (SNC/YSZ/SNC) at 700 °C and 0.21 atm, demonstrating the promise of SNC materials for IT-SOFCs. An oxygen reduction reaction mechanism of SNC thin films is also derived by analyzing EIS at temperature of 550-700 °C under oxygen partial pressure range of 0.04-1 atm.

Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

NASA Astrophysics Data System (ADS)

Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol; An, Tae Kyu; Nam, Sooji; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

2017-08-01

Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlOx) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlOx thin film at 180 °C was comparable to that of AlOx thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlOx thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10-7 A/cm2 at 2 MV/cm). Finally, we confirmed that a dense AlOx thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlOx thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m-2 day-1 (25 °C, 50% relative humidity) and 0.26 g m-2 day-1, respectively.

Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

NASA Astrophysics Data System (ADS)

Sainju, Deepak

Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the intrinsic temperature dependence of these properties and parameters. One of the major achievements of this dissertation research is the characterization of the thickness and optical properties of the interface layer formed between the silver and zinc oxide layers in a back-reflector structure used in thin film photovoltaics. An understanding of the impact of these thin film material properties on solar cell device performance has been complemented by applying reflectance and transmittance spectroscopy as well as simulations of cell performance.

Investigation on the growth of CaCu 3Ti 4O 12 thin film and the origins of its dielectric relaxations

NASA Astrophysics Data System (ADS)

Yuan, Wen-Xiang; Hark, S. K.; Xu, H. Y.; Mei, W. N.

2012-01-01

Using the radio frequency magnetron sputtering, CaCu 3Ti 4O 12 (CCTO) thin films were deposited on platinized silicon substrates. The influence of annealing temperature on structures and morphologies of the thin films was investigated. The high annealing temperature increased the crystallinity of the films. Temperature dependence of the dielectric constant revealed an amazing different characteristic of the dielectric relaxation at ˜10 MHz, whose characteristic frequency abnormally increased with the decrease of the measuring temperature unlike the relaxations due to extrinsic origins. Meanwhile, the dielectric constant at high frequencies was close to the value derived from the first principle calculation. All these gave the evidences to ascribe this relaxation to the intrinsic mechanism.

Silicon-based microfabricated tin oxide gas sensor incorporating use of Hall effect measurement

NASA Astrophysics Data System (ADS)

Hammond, Joseph Wilson

2000-10-01

Characterization of a microfabricated sol-gel derived nano-particle tin oxide thin film on a silicon substrate, through simultaneous measurement of conductivity, Hall mobility and electron density, had not been accomplished before this study. Conductivity is a function of carrier density and Hall mobility. Therefore, a full understanding of the sensing mechanism of tin oxide requires knowledge of the sensor conductivity, electron density and Hall mobility. A tin oxide thin film (1100A thick), derived by the sol-gel method, was deposited on a Si/SiO2 substrate by means of spin coating method. The sol-gel method produces films of porous interconnected nano-sized particles and is relatively inexpensive and easy to produce compared to existing methods of tin oxide thin film deposition. A goal of this study was to determine the compatibility of sol-gel derived tin oxide thin films with silicon based microfabrication procedures. It was determined that conductivity sensitivity is strongly dependant on electron density level and shows very weak dependence on Hall mobility. Lack of Hall mobility sensitivity to H2 concentration suggests that conduction is grain control limited. In this regime, in which the grain size (D) is less than twice the characteristic Debye length (LD), a change in reducing gas concentration results in a nearly simultaneous change in carrier density throughout the entire grain, while the Hall mobility remains unchanged. The sensor calcined at 500°C and operated at 250°C showed maximum conductivity sensitivity to H2 in air. The sensor exhibited a high conductivity sensitivity of 10.6 to 100ppm H2 in air with response time of (˜1) minute and recovery time of (˜4) minutes. Images of the thin film surface, obtained by SEM, were used to study the effects of calcination temperature and operating conditions on the tin oxide structure. Sensitivity decreased as average grain size increased from 7.7nm to 14.7nm, with increasing calcination temperature from 500°C to 800°C. The sensors displayed slight drift in long term baseline stability and good long term sensitivity stability (14 days). Long term operation (30 days) at elevated temperatures had no noticeable effect on the thin film structure.

Development of lead zirconate titanate cantilevers on the micrometer length scale

NASA Astrophysics Data System (ADS)

Martin, Christopher Robert

The objective of this research project was to fabricate a functional ferroelectric microcantilever from patterned lead zirconate titanate (PZT) thin films. Cantilevers fabricated from ferroelectric materials have tremendous potential in sensing applications, particularly due to the increased sensitivity that miniaturized devices offer. This thesis highlights and explores a number of the processing issues that hindered the production of a working prototype. PZT is patterned using soft lithography-inspired techniques from a PZT chemical precursor solution derived by the chelation synthesis route. As the ability to pattern ceramic materials derived from sol-gels on the micrometer scale is a relatively new technology, this thesis aims to expand the scientific understanding of new issues that arise when working with these patterned films. For example, the use of Micromolding in Capillaries (MIMIC) to pattern the PZT thin films results in the evolution of topographical distortions from the shape of the original mold during the shrinkage of patterned thin film during drying and sintering. The factors that contribute to this effect have been explained and a new processing technique called MicroChannel Molding (muCM) was developed. This new process combines the advantages of soft lithography with traditional silicon microfabrication techniques to ensure compatibility with current industrial practices. This work lays the foundation for the future production of working ferroelectric microcantilevers. The proposed microfabrication process is described along with descriptions of each processing difficulty that was encountered. Modifications to the process are proposed along with the descriptions of alternative processing techniques that were attempted for the benefit of future researchers. This dissertation concludes with the electronic characterization of micropattemed PZT thin films. To our knowledge, the ferroelectric properties of patterned PZT thin films have never been directly characterized before. The properties are measured with a commercial ferroelectric test system connected through a conductive Atomic Force Microscope tip. The films patterned by MIMIC and muCM are compared to large-area spin cast films to identify the role that the processing method has on the resulting properties.

Thin-film limit formalism applied to surface defect absorption.

PubMed

Holovský, Jakub; Ballif, Christophe

2014-12-15

The thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of ultrathin defective layer e.g. on a top of a layer of amorphous silicon. We develop a new method of direct evaluation of the surface defective layer and the bulk defects. Applying this method to amorphous silicon on glass, we show that the surface defective layer differs from bulk amorphous silicon in terms of light soaking.

Influence of high energy ion irradiation on fullerene derivative (PCBM) thin films

NASA Astrophysics Data System (ADS)

Sharma, Trupti; Singhal, Rahul; Vishnoi, Ritu; Lakshmi, G. B. V. S.; Biswas, S. K.

2017-04-01

The modifications produced by 55 MeV Si4+ swift heavy ion irradiation on the phenyl C61 butyric acid methyl ester (PCBM) thin films (thickness ∼ 100 nm) has been enlightened. The PCBM thin films were irradiated at 1 × 1010, 1 × 1011 and 1 × 1012 ions/cm2 fluences. After ion irradiation, the decreased optical band gap and FTIR band intensities were observed. The Raman spectroscopy reveals the damage produced by energetic ions. The morphological variation were investigated by atomic force microscopy and contact angle measurements and observed to be influenced by incident ion fluences. After 1011 ions/cm2 fluence, the overlapping of ion tracks starts and produced overlapping effects.

Electronic and atomic structures of Ti{sub 1-x}Al{sub x}N thin films related to their damage behavior

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tuilier, M.-H.; Pac, M.-J.; Girleanu, M.

2008-04-15

Ti and Al K-edge x-ray absorption spectroscopy is used to investigate the electronic structure of Ti{sub 1-x}Al{sub x}N thin films deposited by reactive magnetron sputtering. The experimental near edge spectra of TiN and AlN are interpreted in the light of unoccupied density of state band structure calculations. The comparison of the structural parameters derived from x-ray absorption fine structure and x-ray diffraction reveals segregation between Al-rich and Ti-rich domains within the Ti{sub 1-x}Al{sub x}N films. Whereas x-ray diffraction probes only the crystallized domains, the structural information derived from extended x-ray absorption fine structure analysis turns on both crystalline and grainmore » boundaries. The results are discussed by considering the damage behavior of the films depending on the composition.« less

Phase-field model of domain structures in ferroelectric thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Y. L.; Hu, S. Y.; Liu, Z. K.

A phase-field model for predicting the coherent microstructure evolution in constrained thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. The domain structure evolution during a cubic{r_arrow}tetragonal proper ferroelectric phase transition is studied. It is shown that the model is able to simultaneously predict the effects of substrate constraint and temperature on the volume fractions of domain variants, domain-wall orientations, domain shapes, and their temporal evolution. {copyright} 2001 American Institute of Physics.

Diffusion barriers

NASA Technical Reports Server (NTRS)

Nicolet, M. A.

1983-01-01

The choice of the metallic film for the contact to a semiconductor device is discussed. One way to try to stabilize a contact is by interposing a thin film of a material that has low diffusivity for the atoms in question. This thin film application is known as a diffusion barrier. Three types of barriers can be distinguished. The stuffed barrier derives its low atomic diffusivity to impurities that concentrate along the extended defects of a polycrystalline layer. Sacrificial barriers exploit the fact that some (elemental) thin films react in a laterally uniform and reproducible fashion. Sacrificial barriers have the advantage that the point of their failure is predictable. Passive barriers are those most closely approximating an ideal barrier. The most-studied case is that of sputtered TiN films. Stuffed barriers may be viewed as passive barriers whose low diffusivity material extends along the defects of the polycrystalline host.

Evaporation of Sunscreen Films: How the UV Protection Properties Change.

PubMed

Binks, Bernard P; Brown, Jonathan; Fletcher, Paul D I; Johnson, Andrew J; Marinopoulos, Ioannis; Crowther, Jonathan M; Thompson, Michael A

2016-06-01

We have investigated the evaporation of thin sunscreen films and how the light absorption and the derived sun protection factor (SPF) change. For films consisting of solutions of common UV filters in propylene glycol (PG) as solvent, we show how evaporation generally causes three effects. First, the film area can decrease by dewetting leading to a transient increase in the average film thickness. Second, the film thins by evaporative loss of the solvent. Third, precipitation of the UV filter occurs when solvent loss causes the solubility limit to be reached. These evaporation-induced changes cause the UV absorbance of the film to decrease with resultant loss of SPF over the time scale of the evaporation. We derive an approximate model which accounts semiquantitatively for the variation of SPF with evaporation. Experimental results for solutions of different UV filters on quartz, different skin mimicking substrates, films with added nanoparticles, films with an added polymer and films with fast-evaporating decane as solvent (instead of slow evaporating PG) are discussed and compared with model calculations. Addition of either nanoparticles or polymer suppress film dewetting. Overall, it is hoped that the understanding gained about the mechanisms whereby film evaporation affects the SPF will provide useful guidance for the formulation of more effective sunscreens.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1−xFex)2O3 multilayer thin films

PubMed Central

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-01-01

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe2+ and Fe3+ are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What’s more, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3. PMID:27121446

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFex)O3−δ Thin Films

PubMed Central

Wang, Yi-Guang; Liu, Qiu-Xiang; Jiang, Yan-Ping; Jiang, Li-Li

2017-01-01

Sr(Ti1−xFex)O3−δ (0 ≤ x ≤ 0.2) thin films were grown on Si(100) substrates with LaNiO3 buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1−xFex)O3−δ thin films, were investigated by using the X-ray diffractometer (XRD), atomic force microscopy (AFM), the ferroelectric test system, and the vibrating sample magnetometer (VSM). After substituting a small amount of Ti ion with Fe, highly enhanced ferroelectric properties were obtained successfully in SrTi0.9Ti0.1O3−δ thin films, with a double remanent polarization (2Pr) of 1.56, 1.95, and 9.14 μC·cm−2, respectively, for the samples were annealed in air, oxygen, and nitrogen atmospheres. The leakage current densities of the Fe-doped SrTiO3 thin films are about 10−6–10−5 A·cm−2 at an applied electric field of 100 kV·cm−1, and the conduction mechanism of the thin film capacitors with various Fe concentrations has been analyzed. The ferromagnetic properties of the Sr(Ti1−xFex)O3−δ thin films have been investigated, which can be correlated to the mixed valence ions and the effects of the grain boundary. The present results revealed the multiferroic nature of the Sr(Ti1−xFex)O3−δ thin films. The effect of the annealing environment on the room temperature magnetic and ferroelectric properties of Sr(Ti0.9Fe0.1)O3−δ thin films were also discussed in detail. PMID:28885579

Oxygen surface exchange kinetics measurement by simultaneous optical transmission relaxation and impedance spectroscopy: Sr(Ti,Fe)O3-x thin film case study.

PubMed

Perry, Nicola H; Kim, Jae Jin; Tuller, Harry L

2018-01-01

We compare approaches to measure oxygen surface exchange kinetics, by simultaneous optical transmission relaxation (OTR) and AC-impedance spectroscopy (AC-IS), on the same mixed conducting SrTi 0.65 Fe 0.35 O 3-x film. Surface exchange coefficients were evaluated as a function of oxygen activity in the film, controlled by gas partial pressure and/or DC bias applied across the ionically conducting yttria-stabilized zirconia substrate. Changes in measured light transmission through the film over time (relaxations) resulted from optical absorption changes in the film corresponding to changes in its oxygen and oxidized Fe (~Fe 4+ ) concentrations; such relaxation profiles were successfully described by the equation for surface exchange-limited kinetics appropriate for the film geometry. The k chem values obtained by OTR were significantly lower than the AC-IS derived k chem values and k q values multiplied by the thermodynamic factor (bulk or thin film), suggesting a possible enhancement in k by the metal current collectors (Pt, Au). Long-term degradation in k chem and k q values obtained by AC-IS was also attributed to deterioration of the porous Pt current collector, while no significant degradation was observed in the optically derived k chem values. The results suggest that, while the current collector might influence measurements by AC-IS, the OTR method offers a continuous, in situ , and contact-free method to measure oxygen exchange kinetics at the native surfaces of thin films.

Oxygen surface exchange kinetics measurement by simultaneous optical transmission relaxation and impedance spectroscopy: Sr(Ti,Fe)O3-x thin film case study

PubMed Central

Perry, Nicola H.; Kim, Jae Jin; Tuller, Harry L.

2018-01-01

Abstract We compare approaches to measure oxygen surface exchange kinetics, by simultaneous optical transmission relaxation (OTR) and AC-impedance spectroscopy (AC-IS), on the same mixed conducting SrTi0.65Fe0.35O3-x film. Surface exchange coefficients were evaluated as a function of oxygen activity in the film, controlled by gas partial pressure and/or DC bias applied across the ionically conducting yttria-stabilized zirconia substrate. Changes in measured light transmission through the film over time (relaxations) resulted from optical absorption changes in the film corresponding to changes in its oxygen and oxidized Fe (~Fe4+) concentrations; such relaxation profiles were successfully described by the equation for surface exchange-limited kinetics appropriate for the film geometry. The kchem values obtained by OTR were significantly lower than the AC-IS derived kchem values and kq values multiplied by the thermodynamic factor (bulk or thin film), suggesting a possible enhancement in k by the metal current collectors (Pt, Au). Long-term degradation in kchem and kq values obtained by AC-IS was also attributed to deterioration of the porous Pt current collector, while no significant degradation was observed in the optically derived kchem values. The results suggest that, while the current collector might influence measurements by AC-IS, the OTR method offers a continuous, in situ, and contact-free method to measure oxygen exchange kinetics at the native surfaces of thin films. PMID:29511391

Enhanced performance of solution-processed organic thin-film transistors with a low-temperature-annealed alumina interlayer between the polyimide gate insulator and the semiconductor.

PubMed

Yoon, Jun-Young; Jeong, Sunho; Lee, Sun Sook; Kim, Yun Ho; Ka, Jae-Won; Yi, Mi Hye; Jang, Kwang-Suk

2013-06-12

We studied a low-temperature-annealed sol-gel-derived alumina interlayer between the organic semiconductor and the organic gate insulator for high-performance organic thin-film transistors. The alumina interlayer was deposited on the polyimide gate insulator by a simple spin-coating and 200 °C-annealing process. The leakage current density decreased by the interlayer deposition: at 1 MV/cm, the leakage current densities of the polyimide and the alumina/polyimide gate insulators were 7.64 × 10(-7) and 3.01 × 10(-9) A/cm(2), respectively. For the first time, enhancement of the organic thin-film transistor performance by introduction of an inorganic interlayer between the organic semiconductor and the organic gate insulator was demonstrated: by introducing the interlayer, the field-effect mobility of the solution-processed organic thin-film transistor increased from 0.35 ± 0.15 to 1.35 ± 0.28 cm(2)/V·s. Our results suggest that inorganic interlayer deposition could be a simple and efficient surface treatment of organic gate insulators for enhancing the performance of solution-processed organic thin-film transistors.

Study the target effect on the structural, surface and optical properties of TiO2 thin film fabricated by RF sputtering method

NASA Astrophysics Data System (ADS)

Vyas, Sumit; Tiwary, Rohit; Shubham, Kumar; Chakrabarti, P.

2015-04-01

The effect of target (Ti metal target and TiO2 target) on Titanium Dioxide (TiO2) thin films grown on ITO coated glass substrate by RF magnetron sputtering has been investigated. A comparative study of both the films was done in respect of crystalline structure, surface morphology and optical properties by using X-ray diffractometer (XRD), Atomic Force Microscopy (AFM) studies and ellipsometric measurements. The XRD results confirmed the crystalline structure and indicated that the deposited films have the intensities of anatase phase. The surface morphology and roughness values indicated that the film using Ti metal target has a smoother surface and densely packed with grains as compared to films obtained using TiO2 target. A high transmission in the visible region, and direct band gap of 3.67 eV and 3.75 eV for films derived by using Ti metal and TiO2 target respectively and indirect bandgap of 3.39 eV for the films derived from both the targets (Ti metal and TiO2 target) were observed by the ellipsometric measurements.

Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

PubMed

Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

2010-03-01

Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature. Copyright 2010 Elsevier B.V. All rights reserved.

Surface Modification of Self-Assembled Graphene Oxide for Cell Culture Studies

NASA Astrophysics Data System (ADS)

Swain, John E., III

Thin films show great promise for biological applications, from in situ monitoring to pharmaceutical testing. In this study, a graphene oxide (GO) thin film is prepared with the aim to further functionalize the film for pharmaceutical toxicity screening applications. GO was selected due to its capability to be reduced into an optically transparent and electrically conductive thin film. In addition, GO is derived from carbon, a widely abundant element, in contrast to many other thin films that rely on resource-limited precious metals. Special care was taken to select GO and GO film synthesis methods that minimize the amount of organic-based solvents, maintain reactions at atmospheric pressure and moderate temperatures, and are scalable for manufacturing. Chemical oxidation of graphite flakes was carried out via a modified Hummer's Method with a pre-oxidation step. The resulting GO flakes were self-assembled using commercially available 4-sulfocalix[4]arene. Analytical characterizations (e.g., elemental analysis, XRD, FTIR, Raman, SEM, AFM) were performed to evaluate the success of graphite oxidation and formation of the self-assembled thin film. In order to gain a better understanding of the interactions between GO and sulfocalix (SCX), equilibrium conformations of the SCX molecule and truncated GO were calculated using Spartan'16 Parallels. This study demonstrates that the interaction between the GO and the SCX molecule to create a self-assembled thin film is the result of pi-pi stacking, as hypothesized by Sundramoorthy et al. (2015). The self-assembled GO film was successfully deposited on a polyethylene terephthalate (PET) substrate and functionalized with 3-aminopropyl triethoxysilane (APTES), which renders the film capable of further functionalization with proteins for yielding a three-dimensional cell culture or co-culture platform for different applications.

Amorphous Metal Oxide Thin Films from Aqueous Precursors: New Routes to High-kappa Dielectrics, Impact of Annealing Atmosphere Humidity, and Elucidation of Non-Uniform Composition Profiles

NASA Astrophysics Data System (ADS)

Woods, Keenan N.

Metal oxide thin films serve as critical components in many modern technologies, including microelectronic devices. Industrial state-of-the-art production utilizes vapor-phase techniques to make high-quality (dense, smooth, uniform) thin film materials. However, vapor-phase techniques require large energy inputs and expensive equipment and precursors. Solution-phase routes to metal oxides have attracted great interest as cost-effective alternatives to vapor-phase methods and also offer the potential of large-area coverage, facile control of metal composition, and low-temperature processing. Solution deposition has previously been dominated by sol-gel routes, which utilize organic ligands, additives, and/or solvents. However, sol-gel films are often porous and contain residual carbon impurities, which can negatively impact device properties. All-inorganic aqueous routes produce dense, ultrasmooth films without carbon impurities, but the mechanisms involved in converting aqueous precursors to metal oxides are virtually unexplored. Understanding these mechanisms and the parameters that influence them is critical for widespread use of aqueous approaches to prepare microelectronic components. Additionally, understanding (and controlling) density and composition inhomogeneities is important for optimizing electronic properties. An overview of deposition approaches and the challenges facing aqueous routes are presented in Chapter I. A summary of thin film characterization techniques central to this work is given in Chapter II. This dissertation contributes to the field of solution-phase deposition by focusing on three areas. First, an all-inorganic aqueous route to high-kappa metal oxide dielectrics is developed for two ternary systems. Chapters III and IV detail the film formation chemistry and film properties of lanthanum zirconium oxide (LZO) and zirconium aluminum oxide (ZAO), respectively. The functionality of these dielectrics as device components is also demonstrated. Second, the impact of steam annealing on the evolution of aqueous-derived films is reported. Chapter V demonstrates that steam annealing lowers processing temperatures by effectively reducing residual counterion content, improving film stability with respect to water absorption, and enhancing dielectric properties of LZO films. Third, density and composition inhomogeneities in aqueous-derived films are investigated. Chapters VI and VII examine density inhomogeneities in single- and multi-metal component thin films, respectively, and show that these density inhomogeneities are related to inhomogeneous metal component distributions. This dissertation includes previously published coauthored material.

Optical spectra obtained from amorphous films of rubrene: Evidence for predominance of twisted isomer

NASA Astrophysics Data System (ADS)

Kytka, M.; Gisslen, L.; Gerlach, A.; Heinemeyer, U.; Kováč, J.; Scholz, R.; Schreiber, F.

2009-06-01

In order to investigate the optical properties of rubrene we study the vibronic progression of the first absorption band (lowest π →π∗ transition). We analyze the dielectric function ɛ2 of rubrene in solution and thin films using the displaced harmonic oscillator model and derive all relevant parameters of the vibronic progression. The findings are supplemented by density functional calculations using B3LYP hybrid functionals. Our theoretical results for the molecule in two different conformations, i.e., with a twisted or planar tetracene backbone, are in very good agreement with the experimental data obtained for rubrene in solution and thin films. Moreover, a simulation based on the monomer spectrum and the calculated transition energies of the two conformations indicates that the thin film spectrum of rubrene is dominated by the twisted isomer.

Optical spectra obtained from amorphous films of rubrene: Evidence for predominance of twisted isomer.

PubMed

Kytka, M; Gisslen, L; Gerlach, A; Heinemeyer, U; Kovác, J; Scholz, R; Schreiber, F

2009-06-07

In order to investigate the optical properties of rubrene we study the vibronic progression of the first absorption band (lowest pi-->pi( *) transition). We analyze the dielectric function epsilon(2) of rubrene in solution and thin films using the displaced harmonic oscillator model and derive all relevant parameters of the vibronic progression. The findings are supplemented by density functional calculations using B3LYP hybrid functionals. Our theoretical results for the molecule in two different conformations, i.e., with a twisted or planar tetracene backbone, are in very good agreement with the experimental data obtained for rubrene in solution and thin films. Moreover, a simulation based on the monomer spectrum and the calculated transition energies of the two conformations indicates that the thin film spectrum of rubrene is dominated by the twisted isomer.

Epitaxial growth of thermally stable cobalt films on Au(111)

NASA Astrophysics Data System (ADS)

Haag, N.; Laux, M.; Stöckl, J.; Kollamana, J.; Seidel, J.; Großmann, N.; Fetzer, R.; Kelly, L. L.; Wei, Z.; Stadtmüller, B.; Cinchetti, M.; Aeschlimann, M.

2016-10-01

Ferromagnetic thin films play a fundamental role in spintronic applications as a source for spin polarized carriers and in fundamental studies as ferromagnetic substrates. However, it is challenging to produce such metallic films with high structural quality and chemical purity on single crystalline substrates since the diffusion barrier across the metal-metal interface is usually smaller than the thermal activation energy necessary for smooth surface morphologies. Here, we introduce epitaxial thin Co films grown on an Au(111) single crystal surface as a thermally stable ferromagnetic thin film. Our structural investigations reveal an identical growth of thin Co/Au(111) films compared to Co bulk single crystals with large monoatomic Co terraces with an average width of 500 Å, formed after thermal annealing at 575 K. Combining our results from photoemission and Auger electron spectroscopy, we provide evidence that no significant diffusion of Au into the near surface region of the Co film takes place for this temperature and that no Au capping layer is formed on top of Co films. Furthermore, we show that the electronic valence band is dominated by a strong spectral contribution from a Co 3d band and a Co derived surface resonance in the minority band. Both states lead to an overall negative spin polarization at the Fermi energy.

Photodeposition of amorphous polydiacetylene films from monomer solutions onto transparent substrates

NASA Technical Reports Server (NTRS)

Paley, M. S.; Frazier, D. O.; Abdeldeyem, H.; Armstrong, S.; McManus, S. P.

1995-01-01

Polydiacetylenes are a very promising class of polymers for both photonic and electronic applications because of their highly conjugated structures. For these applications, high-quality thin polydiacetylene films are required. We have discovered a novel technique for obtaining such films of a polydiacetylene derivative of 2-methyl-4-nitroaniline using photodeposition from monomer solutions onto UV transparent substrates. This heretofore unreported process yields amorphous polydiacetylene films with thicknesses on the order of I micron that have optical quality superior to that of films grown by standard crystal growth techniques. Furthermore, these films exhibit good third-order nonlinear optical susceptibilities; degenerate four-wave mixing experiments give x(3) values on the order of 10(exp -8) - 10(exp -7) esu. We have conducted masking experiments which demonstrate that photodeposition occurs only where the substrate is directly irradiated, clearly indicating that the reaction occurs at the surface. Additionally, we have also been able to carry out photodeposition using lasers to form thin polymer circuits. In this work, we discuss the photodeposition of polydiacetylene thin films from solution, perform chemical characterization of these films, investigate the role of the substrate, speculate on the mechanism of the reaction, and make a preliminary determination of the third-order optical nonlinearity of the films. This simple, straightforward technique may ultimately make feasible the production of polydiacetylene thin films for technological applications.

Dynamics of a pre-lens tear film after a blink: Model, evolution, and rupture

NASA Astrophysics Data System (ADS)

Usha, R.; Anjalaiah, Sanyasiraju, Y. V. S. S.

2013-11-01

A mathematical model is developed to investigate the dynamics and rupture of a pre-lens tear film on a contact lens. The contact lens is modeled as a saturated porous medium of constant, finite thickness and is described by the Darcy-Brinkman equations with stress-jump condition at the interface. The model incorporates the influence of capillarity, gravitational drainage, contact lens properties such as the permeability, the porosity, and the thickness of the contact lens on the evolution and rupture of a pre-lens tear film, when the eyelid has opened after a blink. Two models are derived for the evolution of a pre-lens tear film thickness using lubrication theory and are solved numerically; the first uses shear-free surface condition and the second, the tangentially immobile free surface condition. The results reveal that life span of a pre-lens tear film is longer on a thinner contact lens for all values of permeability and porosity parameter considered. An increase in permeability of contact lens, porosity or stress-jump parameter increases the rate of thinning of the film and advances the rupture time. The viscous-viscous interaction between the porous contact lens and the pre-lens tear film increases the resistance offered by the frictional forces to the rate of thinning of pre-lens tear film. This slows down the thinning process and hence delays the rupture of the film as compared to that predicted by the models of Nong and Anderson [SIAM. J. Appl. Math. 70, 2771-2795 (2010)] derived in the framework of Darcy model.

Confining metal-halide perovskites in nanoporous thin films

PubMed Central

Demchyshyn, Stepan; Roemer, Janina Melanie; Groiß, Heiko; Heilbrunner, Herwig; Ulbricht, Christoph; Apaydin, Dogukan; Böhm, Anton; Rütt, Uta; Bertram, Florian; Hesser, Günter; Scharber, Markus Clark; Sariciftci, Niyazi Serdar; Nickel, Bert; Bauer, Siegfried; Głowacki, Eric Daniel; Kaltenbrunner, Martin

2017-01-01

Controlling the size and shape of semiconducting nanocrystals advances nanoelectronics and photonics. Quantum-confined, inexpensive, solution-derived metal halide perovskites offer narrowband, color-pure emitters as integral parts of next-generation displays and optoelectronic devices. We use nanoporous silicon and alumina thin films as templates for the growth of perovskite nanocrystallites directly within device-relevant architectures without the use of colloidal stabilization. We find significantly blue-shifted photoluminescence emission by reducing the pore size; normally infrared-emitting materials become visibly red, and green-emitting materials become cyan and blue. Confining perovskite nanocrystals within porous oxide thin films drastically increases photoluminescence stability because the templates auspiciously serve as encapsulation. We quantify the template-induced size of the perovskite crystals in nanoporous silicon with microfocus high-energy x-ray depth profiling in transmission geometry, verifying the growth of perovskite nanocrystals throughout the entire thickness of the nanoporous films. Low-voltage electroluminescent diodes with narrow, blue-shifted emission fabricated from nanocrystalline perovskites grown in embedded nanoporous alumina thin films substantiate our general concept for next-generation photonic devices. PMID:28798959

Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4

NASA Astrophysics Data System (ADS)

Shibata, Yosei; Tsutsumi, Jun'ya; Matsuoka, Satoshi; Matsubara, Koji; Yoshida, Yuji; Chikamatsu, Masayuki; Hasegawa, Tatsuo

2015-04-01

We report the fabrication of high quality thin films for semiconducting organic donor-acceptor charge-transfer (CT) compounds, (diC8BTBT)(FnTCNQ) (diC8BTBT = 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and FnTCNQ [n = 0,2,4] = fluorinated derivatives of 7,7,8,8,-tetracyanoquinodimethane), which have a high degree of layered crystallinity. Single-phase and uniaxially oriented polycrystalline thin films of the compounds were obtained by co-evaporation of the component donor and acceptor molecules. Organic thin-film transistors (OTFTs) fabricated with the compound films exhibited n-type field-effect characteristics, showing a mobility of 6.9 × 10-2 cm2/V s, an on/off ratio of 106, a sub-threshold swing of 0.8 V/dec, and an excellent stability in air. We discuss the suitability of strong intermolecular donor-acceptor interaction and the narrow CT gap nature in compounds for stable n-type OTFT operation.

Enhanced energy storage and pyroelectric properties of highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 thin films derived at low temperature

NASA Astrophysics Data System (ADS)

Zhu, Hanfei; Ma, Hongfang; Zhao, Yuyao

2018-05-01

Highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.15, y = 0.05; x = 0.1, y = 0.1; x = 0.05, y = 0.15) thin films were deposited on Pt/Ti/SiO2/Si substrates at a low temperature of 450 °C via a sol-gel route. It was found that all the (Pb1-x-yLaxCay)Ti1-x/4O3 thin films could be completely crystallized and the content of La/Ca showed a significant effect on the electrical properties of films. Among the three films, the (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.1, y = 0.1) thin film exhibited the enhanced overall electrical properties, such as a low dielectric loss (tan ⁡ δ < 0.08) and leakage current (J ∼ 4.6 ×10-5 A/cm2), a high recoverable energy density (Wre ∼ 15 J/cm3), as well as a large pyroelectric coefficient (p ∼ 190 μC/m2K) and figure of merit (Fd‧∼ 77 μC /m2K). The findings suggest that the fabricated thin films with a good (100) orientation can be an attractive candidate for applications in Si-based energy storage and pyroelectric devices.

Effect of Surface Excess Energy Transport on the Rupture of an Evaporating Film

NASA Astrophysics Data System (ADS)

Luo, Yan; Zhou, Jianqiu; Yang, Xia; Liu, Rong

2018-05-01

In most of existing works on the instabilities of an evaporating film, the energy boundary condition only takes into account contributions of the evaporation latent heat and the heat conduction in the liquid. We use a new generalized energy boundary condition at the evaporating liquid-vapor interface, in which the contribution of the transport of the Gibbs excess energy is included. We have derived the long-wave equations in which the thickness of film and the interfacial temperature are coupled to describe the dynamics of an evaporating thin film. The results of our computation show that the transport of the Gibbs excess internal energy delay the rupture of thin films due to van de Waals force, evaporating effect and vapor recoil.

Surface roughening and scaling behavior of vacuum-deposited SnCl{sub 2}Pc organic thin films on different substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Obaidulla, Sk. Md.; Giri, P. K., E-mail: giri@iitg.ernet.in; Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039

2015-11-30

The evolution of surface morphology and scaling behavior of tin (IV) phthalocyanine dichloride (SnCl{sub 2}Pc) thin films grown on Si(100) and glass substrates have been studied using atomic force microscopy (AFM) and height-height correlation function analysis. X-ray diffraction measurement confirms the crystalline nature of the SnCl{sub 2}Pc thin film on glass substrate, while no crystallographic ordering is present for the film grown on Si substrate. The growth exponent β is found to be much larger for the film on glass substrate (0.48 ± 0.07) as compared to that on Si substrate (0.21 ± 0.08), which may be due to the high step-edge barrier, so-calledmore » Ehrlich-Schwöbel barrier, resulting in the upward dominant growth on glass substrate. From the 2D fast Fourier transform of AFM images and derived scaling exponents, we conclude that the surface evolution follows a mound like growth. These results imply the superiority of glass substrate over the Si substrate for the growth of device quality SnCl{sub 2}Pc thin film.« less

Optical and sensing properties of sol-gel derived vanadium pentoxide thin films with porous and dense structures

NASA Astrophysics Data System (ADS)

Babeva, T.; Awala, H.; Grand, J.; Lazarova, K.; Vasileva, M.; Mintova, S.

2018-03-01

The sol-gel and spin-coating methods were used for deposition of thin transparent V2O5 films on optical glass substrates and silicon wafers. Different synthesis and deposition conditions, including synthesis temperatures and post-deposition annealing, were used aiming at obtaining transparent films with high refractive index and good optical quality. The surface morphology and structure of the films were studied by SEM and XRD. The optical properties (refractive index, extinction coefficient and optical band gap) and thickness of the V2O5 films were determined from their transmittance and reflectance spectra. The potential application of the films as building blocks of optical sensors was demonstrated by preparation of multilayered structures comprising both V2O5 and BEA-type zeolite films and testing their response towards acetone vapors.

Structurally colored biopolymer thin films for detection of dissolved metal ions in aqueous solution

NASA Astrophysics Data System (ADS)

Cathell, Matthew David

Natural polymers, such as the polysaccharides alginate and chitosan, are noted sorbents of heavy metals. Their polymer backbone structures are rich in ligands that can interact with metal ions through chelation, electrostatics, ion exchange and nonspecific mechanisms. These water-soluble biopolymer materials can be processed into hydrogel thin films, creating high surface area interfaces ideal for binding and sequestering metal ions from solution. By virtue of their uniform nanoscale dimensions (with thicknesses smaller than wavelengths of visible light) polymer thin films exhibit structure-based coloration. This phenomenon, frequently observed in nature, causes the transparent and essentially colorless films to reflect light in a wide array of colors. The lamellar film structures act as one-dimensional photonic crystals, allowing selective reflection of certain wavelengths of light while minimizing other wavelengths by out-of-phase interference. The combination of metal-binding and reflective properties make alginate and chitosan thin films attractive candidates for analyte sensing. Interactions with metal ions can induce changes in film thicknesses and refractive indices, thus altering the path of light reflected through the film. Small changes in dimensional or optical properties can lead to shifts in film color that are perceivable by the unaided eye. These thin films offer the potential for optical sensing of toxic dissolved materials without the need for instrumentation, external power or scientific expertise. With the use of a spectroscopic ellipsometer and a fiber optic reflectance spectrometer, the physical and optical characteristics of biopolymer thin films have been characterized in response to 50 ppm metal ion solutions. It has been determined that metal interactions can lead to measurable changes in both film thicknesses and effective refractive indices. The intrinsic response behaviors of alginate and chitosan, as well as the responses of modified derivatives of these materials, have been investigated. It has been found that the natural metal selectivity of biopolymer films can be tuned and refined by adjusting the ligand environment through backbone modification. Other investigations have also been undertaken, including in situ monitoring of biopolymer---metal interactions and quantification of thin film metal-binding capacities.

Microstructure and transport properties of sol-gel derived highly (100)-oriented lanthanum nickel oxide thin films on SiO 2 /Si substrate

NASA Astrophysics Data System (ADS)

Zhu, M. W.; Wang, Z. J.; Chen, Y. N.; Zhang, Z. D.

2011-12-01

In the present work, lanthanum nickel oxide (LNO) thin films were prepared by the sol-gel method and different thermal treatments were adopted by adjusting the preheating treatment. The microstructure, crystal orientation, chemical composition and electrical properties of LNO films were analyzed to elucidate the relationship between the microstructure and the transport properties of the films. The results show that equiaxed grains predominate the microstructure of the films with pyrolysis step. Without the pyrolysis step, columnar grains are formed in the films, accompanied with an improvement in crystallinity and strengthening of the (100)-orientation. Furthermore, the metal-insulator transition temperature decreases for the films without the pyrolysis step. The effect of film microstructure on its electrical properties was discussed in terms of the existence of internal stress and the improved crystallinity.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Effect of Annealing Conditions on Properties of Sol-Gel Derived Al-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Gao, Mei-Zhen; Zhang, Feng; Liu, Jing; Sun, Hui-Na

2009-08-01

Transparent conductive Al-doped ZnO (AZO) thin films are prepared on normal glass substrates by the sol-gel spin coating method. The effects of drying conditions, annealing temperature and cooling rate on the structural, electrical and optical properties of AZO films are investigated by x-ray diffraction, scanning electron microscopy, the four-point probe method and UV-VIS spectrophotometry, respectively. The deposited films show a hexagonal wurtzite structure and high preferential c-axis orientation. As the drying temperature increases from 100°C to 300°C the resistivity of AZO films decreases dramatically. In contrast to the annealed films cooled in a furnace and in air, the resistivity of the annealed film which is cooled at -15°C is greatly reduced. Increasing the cooling rate dramatically increases the electrical conductivity of AZO films.

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

PubMed

Li, Yang; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Wu, Xiaohong; Qin, Wei

2017-04-05

Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10 -4 Ω·cm, the carrier concentration is high up to 2.2 × 10 21 cm -3 . optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al 2 O 3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and I on /I off ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.

Probing-models for interdigitated electrode systems with ferroelectric thin films

NASA Astrophysics Data System (ADS)

Nguyen, Cuong H.; Nigon, Robin; Raeder, Trygve M.; Hanke, Ulrik; Halvorsen, Einar; Muralt, Paul

2018-05-01

In this paper, a new method to characterize ferroelectric thin films with interdigitated electrodes is presented. To obtain accurate properties, all parasitic contributions should be subtracted from the measurement results and accurate models for the ferroelectric film are required. Hence, we introduce a phenomenological model for the parasitic capacitance. Moreover, two common analytical models based on conformal transformations are compared and used to calculate the capacitance and the electric field. With a thin film approximation, new simplified electric field and capacitance formulas are derived. By using these formulas, more consistent CV, PV and stress-field loops for samples with different geometries are obtained. In addition, an inhomogeneous distribution of the permittivity due to the non-uniform electric field is modelled by finite element simulation in an iterative way. We observed that this inhomogeneous distribution can be treated as a homogeneous one with an effective value of the permittivity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bourlier, Yoan; Cristini Robbe, Odile; Laboratoire de Physique des Lasers, Atomes et Molécules

Highlights: • CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin films were prepared by sol–gel process. • Evolution of lattice parameters is characteristic of a solid solution. • Optical band gap was found to be linearly dependent on the gallium rate. - Abstract: In this paper, we report the elaboration of Cu(In,Ga)S{sub 2} chalcopyrite thin films via a sol–gel process. To reach this aim, solutions containing copper, indium and gallium complexes were prepared. These solutions were thereafter spin-coated onto the soda lime glass substrates and calcined, leading to metallic oxides thin films. Expected chalcopyrite films were finally obtained by sulfurization of oxides layersmore » using a sulfur atmosphere at 500 °C. The rate of gallium incorporation was studied both at the solutions synthesis step and at the thin films sulfurization process. Elemental and X-ray diffraction (XRD) analyses have shown the efficiency of monoethanolamine used as a complexing agent for the preparation of CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin layers. Moreover, the replacement of diethanolamine by monoethanolamine has permitted the substitution of indium by isovalent gallium from x = 0 to x = 0.4 and prevented the precipitation of copper derivatives. XRD analyses of sulfurized thin films CuIn{sub (1−x)}Ga{sub x}S{sub 2,} clearly indicated that the increasing rate of gallium induced a shift of XRD peaks, revealing an evolution of the lattice parameter in the chalcopyrite structure. These results were confirmed by Raman analyses. Moreover, the optical band gap was also found to be linearly dependent upon the gallium rate incorporated within the thin films: it varies from 1.47 eV for x = 0 to 1.63 eV for x = 0.4.« less

Sol-gel derived ZnO as an electron transport layer (ETL) for inverted organic solar cells

NASA Astrophysics Data System (ADS)

Tiwari, D. C.; Dwivedi, Shailendra Kumar; Dipak, Phukhrambam; Chandel, Tarun; Sharma, Rishi

2017-05-01

In this work, we present the study of the fabrication process of the sol-gel derived zinc oxide (ZnO) as an electron transport layer (ETL.). The solution processed inverted bulk heterojunction organic solar cells based on a thin film blend of poly (3-hexylthiophene 2, 5-diyl) and [6,6]-phenyl-C61-butyric acid methyl ester is prepared. ZnO thin films are annealed at different temperature to optimize the solar cell performance and their characterization for their structural and optical properties are carried out. We have observed Voc=70mV, Jsc=1.33 µA/cm2 and FF=26% from the inverted heterojunction solar cell.

Microstructural evolution of ion-irradiated sol–gel-derived thin films

DOE PAGES

Shojaee, S. A.; Qi, Y.; Wang, Y. Q.; ...

2017-07-17

In this paper, the effects of ion irradiation on the microstructural evolution of sol–gel-derived silica-based thin films were examined by combining the results from Fourier transform infrared, Raman, and X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and elastic recoil detection. Variations in the chemical composition, density, and structure of the constituent phases and interfaces were studied, and the results were used to propose a microstructural model for the irradiated films. It was discovered that the microstructure of the films after ion irradiation and decomposition of the starting organic materials consisted of isolated hydrogenated amorphous carbon clusters within an amorphous and carbon-incorporatedmore » silica network. A decrease in the bond angle of Si–O–Si bonds in amorphous silica network along with an increase in the concentration of carbon-rich SiO x C y tetrahedra were the major structural changes caused by ion irradiation. Finally, in addition, hydrogen release from free carbon clusters was observed with increasing ion energy and fluence.« less

Synthesis and properties of 1,3-dioxo-1H-inden-2(3H)-ylidene fragment and (3-(dicyanomethylene)-5,5-dimethylcyclohex-1-enyl)vinyl fragment containing derivatives of azobenzene for holographic recording materials

NASA Astrophysics Data System (ADS)

Zarins, Elmars; Kokars, Valdis; Ozols, Andris; Augustovs, Peteris

2011-06-01

New glassy 1,3-dioxo-1H-inden-2(3H)-ylidene fragment und (3-(dicyanomethylene)-5,5-dimethylcyclohex-1-enyl)vinyl fragment containing push-pull type derivatives of azobenzene able to create thin layers have been synthesized. Thin films of synthesized glasses for holographic recording were prepared using spin coating technique from saturated chloroform solution. Holographic grating recording in films of 6a-b, 7 and 12 has been experimentally studied at 633 and 532 nm in both transmission and reflection modes with p-p recording beam polarizations. The film 12 was found to be the most efficient at both wavelengths in transmission mode exhibiting the maximum self-diffraction efficiency of 9.9% at 633 nm, and 15.3% at 532 nm. The film of 6a was the most efficient in reflection mode with the maximum selfdiffraction efficiency of about 3%.

Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riha, Shannon C.; Koegel, Alexandra A.; Meng, Xiangbo

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure r-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase, consisting of both r- and a-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS) allow the derivation of a self-consistent reaction mechanism. Lastly, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cyclemore » stability and near-theoretical capacity.« less

Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

DOE PAGES

Riha, Shannon C.; Koegel, Alexandra A.; Meng, Xiangbo; ...

2016-01-19

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure r-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase, consisting of both r- and a-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS) allow the derivation of a self-consistent reaction mechanism. Lastly, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cyclemore » stability and near-theoretical capacity.« less

Investigation of light induced effect on density of states of Pb doped CdSe thin films

NASA Astrophysics Data System (ADS)

Kaur, Jagdish; Singh, Baljinder; Tripathi, S. K.

2016-05-01

Thin films of Pb doped CdSe are deposited on the glass substrates by thermal evaporation technique using inert gas condensation method. The prepared thin films are light soaked under vacuum of 2×10-3 mbar for two hour. The absorption coefficient in the sub-band gap region has been studied using Constant Photocurrent Method (CPM). The absorption coefficient in the sub-band gap region follows an exponential Urbach tail. The value of Urbach energy and number density of defect states have been calculated from the absorption coefficient in the sub-band gap region and found to increase after light soaking treatment. The energy distribution of the occupied density of states below Fermi level has been evaluated using derivative procedure of the absorption coefficient.

Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Young Mi; Jung, Min-Sang; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr, E-mail: mcjung@oist.jp

2015-08-15

Using scanning electron microscopy (SEM) and high-resolution x-ray photoelectron spectroscopy with the synchrotron radiation we investigated Si-based micro-clusters embedded in TaSiN thin films having oxygen contamination. TaSiN thin films were deposited by co-sputtering on fixed or rotated substrates and with various power conditions of TaN and Si targets. Three types of embedded micro-clusters with the chemical states of pure Si, SiO{sub x}-capped Si, and SiO{sub 2}-capped Si were observed and analyzed using SEM and Si 2p and Ta 4f core-level spectra were derived. Their different resistivities are presumably due to the different chemical states and densities of Si-based micro-clusters.

Tunneling probe of fluctuating superconductivity in disordered thin films

NASA Astrophysics Data System (ADS)

Dentelski, David; Frydman, Aviad; Shimshoni, Efrat; Dalla Torre, Emanuele G.

2018-03-01

Disordered thin films close to the superconductor-insulator phase transition (SIT) hold the key to understanding quantum phase transition in strongly correlated materials. The SIT is governed by superconducting quantum fluctuations, which can be revealed, for example, by tunneling measurements. These experiments detect a spectral gap, accompanied by suppressed coherence peaks, on both sides of the transition. Here we describe the insulating side in terms of a fluctuating superconducting field with finite-range correlations. We perform a controlled diagrammatic resummation and derive analytic expressions for the tunneling differential conductance. We find that short-range superconducting fluctuations suppress the coherence peaks even in the presence of long-range correlations. Our approach offers a quantitative description of existing measurements on disordered thin films and accounts for tunneling spectra with suppressed coherence peaks.

Large grained perovskite solar cells derived from single-crystal perovskite powders with enhanced ambient stability

DOE PAGES

Yen, Hung -Ju; Liang, Po -Wei; Chueh, Chu -Chen; ...

2016-05-25

In this study, we demonstrate the large grained perovskite solar cells prepared from precursor solution comprising single-crystal perovskite powders for the first time. Here, the resultant large grained perovskite thin film possesses negligible physical (structural) gap between each large grain and are highly crystalline as evidenced by its fan-shaped birefringence observed under polarized light, which is very different to the thin film prepared from the typical precursor route (MAI + PbI 2).

Preparation and Properties of New Inorganic Glasses and Gel-Derived Solids

DTIC Science & Technology

1991-04-01

route were examined, including the use of SiC and diamond powder as fillers and some triphasic , solids. Many ferroelectnic thin films were prepared...use of SiC and diamond powder as fillers and some triphasic solids. Many ferroelectric thin films were prepared and their properties measured. An...Exit Filter Mmrn Holder Filter He Gas Perforated Pyrolysis Reactor 00 0 00 00 00 00 0 0 0 0 Soutolution asWe Fi.8.Shmai darm fepeiena0yses I I I ci

An All-Optical Picosecond Switch in Polydiacetylene

NASA Technical Reports Server (NTRS)

Abdeldayem, Hossin; Frazier, Donald O.; Paley, Mark S.

2002-01-01

Polydiacetylene derivative of 2-methyl-4-nitroaniline (PDAMNA) showed a picosecond switching property. This phenomenon was demonstrated by wave guiding a cw He-Ne laser collinearly with a mode-locked picosecond Nd:YAG laser at 532 nm through a hollow fiber coated on the inside with a thin film of PDAMNA. The z-scan investigations of PDAMNA thin film revealed that the PDAMNA system is a three level system and the switching is caused by excited state absorption of the He-Ne beam.

Aging effects of the precursor solutions on the properties of spin coated Ga-doped ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serrao, Felcy Jyothi, E-mail: jyothiserrao@gmail.com; Dharmaprakash, S. M.

2015-06-24

In this study, gallium doped zinc oxide thin films (GZO) were grown on a glass substrate by a simple sol-gel process and spin coating technique using zinc acetate and gallium nitrate (3at%) as precursors for Zn and Ga ions respectively. The effects of aging time of the precursor solution on the structural and optical properties of the GZO films were investigated. The surface morphology, grain size, film thickness and optical properties of the GZO films were found to depend directly on the sol aging time. XRD studies reveal that the films are polycrystalline with a hexagonal wurtzite structure and showmore » the c-axis grain orientation. Optical transmittance spectra of all the films exhibited transmittance higher than about 82% within the visible wavelength region. A sharp fundamental absorption edge with a slight blue shifting was observed with an increase in sol aging time which can be explained by Burstein-Moss effect. The result indicates that an appropriate aging time of the sol is important for the improvement of the structural and optical properties of GZO thin films derived from sol-gel method.« less

Retention of Antibacterial Activity in Geranium Plasma Polymer Thin Films

PubMed Central

Al-Jumaili, Ahmed; Bazaka, Kateryna

2017-01-01

Bacterial colonisation of biomedical devices demands novel antibacterial coatings. Plasma-enabled treatment is an established technique for selective modification of physicochemical characteristics of the surface and deposition of polymer thin films. We investigated the retention of inherent antibacterial activity in geranium based plasma polymer thin films. Attachment and biofilm formation by Staphylococcus aureus, Pseudomonas aeruginosa, and Escherichia coli was significantly reduced on the surfaces of samples fabricated at 10 W radio frequency (RF) power, compared to that of control or films fabricated at higher input power. This was attributed to lower contact angle and retention of original chemical functionality in the polymer films fabricated under low input power conditions. The topography of all surfaces was uniform and smooth, with surface roughness of 0.18 and 0.69 nm for films fabricated at 10 W and 100 W, respectively. Hardness and elastic modules of films increased with input power. Independent of input power, films were optically transparent within the visible wavelength range, with the main absorption at ~290 nm and optical band gap of ~3.6 eV. These results suggest that geranium extract-derived polymers may potentially be used as antibacterial coatings for contact lenses. PMID:28902134

Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O{sub 3} thin films and powders

DOEpatents

Boyle, T.J.

1999-01-12

A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O{sub 3} precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650 C and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures. 2 figs.

Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 thin films and powders

DOEpatents

Boyle, Timothy J.

1999-01-01

A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650.degree. C. and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures.

Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Teh, Yen Chin; Saif, Ala'eddin A.; Azhar Zahid Jamal, Zul; Poopalan, Prabakaran

2017-11-01

Ba0.9Gd0.1TiO3 thin films have been fabricated on SiO2/Si and fused silica by sol-gel method. The films are prepared through a spin coating process and annealed at 900 °C to obtain crystallized films. The effect of film thickness on the microstructure and optical band gap has been investigated using X-ray diffractometer, atomic force microscope and ultraviolet-visible spectroscopy, respectively. XRD patterns confirm that the films crystallized with tetragonal phase perovskite structure. The films surface morphology is analysed through amplitude parameter analysis to find out that the grain size and surface roughness are increased with the increase of films thickness. The transmittance and absorbance spectra reveal that all films exhibit high absorption in UV region. The evaluated optical band gap is obtained in the range of 3.67 - 3.78 eV and is found to be decreased as the thickness increase.

Laser induced optical bleaching in Ge{sub 12}Sb{sub 25}S{sub 63} chalcogenide thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naik, Ramakanta, E-mail: ramakanta.naik@gmail.com; Jena, S.; Sahoo, N. K.

2015-06-24

Photo induced effects of Ge{sub 12}Sb{sub 25}S{sub 63} films illuminated with 532 nm laser light is investigated from transmission spectra measured by FTIR spectroscopy. The material exhibit photo bleaching (PB) when exposed to band gap laser for a prolonged time in vacuum. The PB is ascribed to structural changes inside the film as well as surface photo oxidation. The amorphous nature of thin films was detected by X-ray diffraction. The chemical composition of the deposited thin films was examined by Energy Dispersive X-ray Analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on inverse synthesismore » method, and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple–DiDomenico model. It was found that, the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman spectra analysis also supports the optical changes.« less

Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

PubMed

Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

2015-12-23

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

Planar versus bulk heterojunction perovskite microstructures: Impact of morphology on photovoltaic properties and recombination dynamics

NASA Astrophysics Data System (ADS)

Singh, Ranbir; Shukla, Vivek Kumar

2018-05-01

In this work, we compare the planar and bulk heterojunction (BHJ) perovskite thin films for their morphologies, photovoltaic properties, and recombination dynamics. The BHJ perovskite thin films were prepared with the addition of fullerene derivative [6, 6]-Phenyl-C60 butyric acid methyl ester (PC60BM). The addition of PC60BM in perovskite provides a pinhole free film with high absorption coefficient and better charge transfer. The solar cells fabricated with BHJ perovskite exhibits power conversion efficiency (PCE) of 13.5%, with remarkably increased short-circuit current density (JSC) of 20.1 mAcm-2 and reduced recombination rate.

Grain Boundaries Act as Solid Walls for Charge Carrier Diffusion in Large Crystal MAPI Thin Films.

PubMed

Ciesielski, Richard; Schäfer, Frank; Hartmann, Nicolai F; Giesbrecht, Nadja; Bein, Thomas; Docampo, Pablo; Hartschuh, Achim

2018-03-07

Micro- and nanocrystalline methylammonium lead iodide (MAPI)-based thin-film solar cells today reach power conversion efficiencies of over 20%. We investigate the impact of grain boundaries on charge carrier transport in large crystal MAPI thin films using time-resolved photoluminescence (PL) microscopy and numerical model calculations. Crystal sizes in the range of several tens of micrometers allow for the spatially and time resolved study of boundary effects. Whereas long-ranged diffusive charge carrier transport is observed within single crystals, no detectable diffusive transport occurs across grain boundaries. The observed PL transients are found to crucially depend on the microscopic geometry of the crystal and the point of observation. In particular, spatially restricted diffusion of charge carriers leads to slower PL decay near crystal edges as compared to the crystal center. In contrast to many reports in the literature, our experimental results show no quenching or additional loss channels due to grain boundaries for the studied material, which thus do not negatively affect the performance of the derived thin-film devices.

Thermoelectric Figures of Merit of Zn4Sb3 and Zrnisn-based Half-heusler Compounds Influenced by Mev Ion-beam Bombardments

NASA Astrophysics Data System (ADS)

Budak, S.; Guner, S.; Muntele, C. I.; Ila, D.

Semiconducting β-Zn4Sb3 and ZrNiSn-based half-Heusler compound thin films with applications as thermoelectric (TE) materials were prepared using ion beam assisted deposition (IBAD). High-purity solid zinc (Zn) and antimony (Sb) were evaporated by electron beam to grow the β-Zn4Sb3 thin film while high-purity zirconium (Zr) powder and nickel (Ni) tin (Sn) powders were evaporated by electron beam to grow the ZrNiSn-based half-Heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardment for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardment. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam couldcause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ω-method (3rd harmonic) measurement system to measure the cross-plane thermal conductivity, the van der Pauw measurement system to measure the electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.

Sol-gel derived ceramic electrolyte films on porous substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kueper, T.W.

1992-05-01

A process for the deposition of sol-gel derived thin films on porous substrates has been developed; such films should be useful for solid oxide fuel cells and related applications. Yttria-stabilized zirconia films have been formed from metal alkoxide starting solutions. Dense films have been deposited on metal substrates and ceramic substrates, both dense and porous, through dip-coating and spin-coating techniques, followed by a heat treatment in air. X-ray diffraction has been used to determine the crystalline phases formed and the extent of reactions with various substrates which may be encountered in gas/gas devices. Surface coatings have been successfully applied tomore » porous substrates through the control of substrate pore size and deposition parameters. Wetting of the substrate pores by the coating solution is discussed, and conditions are defined for which films can be deposited over the pores without filling the interiors of the pores. Shrinkage cracking was encountered in films thicker than a critical value, which depended on the sol-gel process parameters and on the substrate characteristics. Local discontinuities were also observed in films which were thinner than a critical value which depended on the substrate pore size. A theoretical discussion of cracking mechanisms is presented for both types of cracking, and the conditions necessary for successful thin formation are defined. The applicability of these film gas/gas devices is discussed.« less

Measuring thermal conductivity of thin films and coatings with the ultra-fast transient hot-strip technique

NASA Astrophysics Data System (ADS)

Belkerk, B. E.; Soussou, M. A.; Carette, M.; Djouadi, M. A.; Scudeller, Y.

2012-07-01

This paper reports the ultra-fast transient hot-strip (THS) technique for determining the thermal conductivity of thin films and coatings of materials on substrates. The film thicknesses can vary between 10 nm and more than 10 µm. Precise measurement of thermal conductivity was performed with an experimental device generating ultra-short electrical pulses, and subsequent temperature increases were electrically measured on nanosecond and microsecond time scales. The electrical pulses were applied within metallized micro-strips patterned on the sample films and the temperature increases were analysed within time periods selected in the window [100 ns-10 µs]. The thermal conductivity of the films was extracted from the time-dependent thermal impedance of the samples derived from a three-dimensional heat diffusion model. The technique is described and its performance demonstrated on different materials covering a large thermal conductivity range. Experiments were carried out on bulk Si and thin films of amorphous SiO2 and crystallized aluminum nitride (AlN). The present approach can assess film thermal resistances as low as 10-8 K m2 W-1 with a precision of about 10%. This has never been attained before with the THS technique.

Preparation and properties of sol-gel derived PZT thin films for decoupling capacitor applications

NASA Astrophysics Data System (ADS)

Schwartz, R. W.; Dimos, D.; Lockwood, S. J.; Torres, V. M.

The use of ceramic thin films as decoupling capacitors offers the possibility of capacitor integration within the integrated circuit (IC) package and, potentially, directly onto the IC itself. Since these configurations minimize series inductance, higher operational speeds are possible. In the present study, the authors have investigated the dielectric and leakage characteristics of sol-gel PZT films. For compositions near the morphotropic phase boundary, dielectric constants of 1000, and loss tangents of about 0.02, are observed. The current-voltage behavior of the capacitors is characterized by a non-linear response, and significant asymmetry in both the leakage and breakdown characteristics as a function of bias sign is observed. Breakdown fields for PZT 53/47 thin films are typically approximately 800 kV/cm at 25 C. The authors have also studied the effects of La and Nb dopant additions and alternate firing strategies on film leakage characteristics. Donor doping at 2 - 5 mol % lowers leakage currents by a factor of 10(exp 3). For films prepared by a multilayering approach, firing each layer to crystallization results in leakage currents that are a factor of 10(exp 2) lower than films prepared by the standard process.

Organics Exposure in Orbit (OREOcube): A Next-Generation Space Exposure Platform

NASA Technical Reports Server (NTRS)

Elsaesser, Andreas; Quinn, Richard; Ehrenfreund, Pascale; Mattioda, Andrew L.; Ricco, Antonio J.; Alonzo, Jason; Breitenbach, Alex; Chan, Yee Kim; Fresneau, Aurelien; Salama, Farid;

Theoretical requirements for broadband perfect absorption of acoustic waves by ultra-thin elastic meta-films

PubMed Central

Duan, Yuetao; Luo, Jie; Wang, Guanghao; Hang, Zhi Hong; Hou, Bo; Li, Jensen; Sheng, Ping; Lai, Yun

2015-01-01

We derive and numerically demonstrate that perfect absorption of elastic waves can be achieved in two types of ultra-thin elastic meta-films: one requires a large value of almost pure imaginary effective mass density and a free space boundary, while the other requires a small value of almost pure imaginary effective modulus and a hard wall boundary. When the pure imaginary density or modulus exhibits certain frequency dispersions, the perfect absorption effect becomes broadband, even in the low frequency regime. Through a model analysis, we find that such almost pure imaginary effective mass density with required dispersion for perfect absorption can be achieved by elastic metamaterials with large damping. Our work provides a feasible approach to realize broadband perfect absorption of elastic waves in ultra-thin films. PMID:26184117

Sol processing of conjugated carbon nitride powders for thin-film fabrication.

PubMed

Zhang, Jinshui; Zhang, Mingwen; Lin, Lihua; Wang, Xinchen

2015-05-18

The chemical protonation of graphitic carbon nitride (CN) solids with strong oxidizing acids, for example HNO3, is demonstrated as an efficient pathway for the sol processing of a stable CN colloidal suspension, which can be translated into thin films by dip/disperse-coating techniques. The unique features of CN colloids, such as the polymeric matrix and the reversible hydrogen bonding, result in the thin-film electrodes derived from the sol solution exhibiting a high mechanical stability with improved conductivity for charge transport, and thus show a remarkably enhanced photo-electrochemical performance. The polymer system can in principle be broadly tuned by hybridization with desired functionalities, thus paving the way for the application of CN for specific tasks, as exemplified here by coupling with carbon nanotubes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Designing with non-linear viscoelastic fluids

NASA Astrophysics Data System (ADS)

Schuh, Jonathon; Lee, Yong Hoon; Allison, James; Ewoldt, Randy

2017-11-01

Material design is typically limited to hard materials or simple fluids; however, design with more complex materials can provide ways to enhance performance. Using the Criminale-Ericksen-Filbey (CEF) constitutive model in the thin film lubrication limit, we derive a modified Reynolds Equation (based on asymptotic analysis) that includes shear thinning, first normal stress, and terminal regime viscoelastic effects. This allows for designing non-linear viscoelastic fluids in thin-film creeping flow scenarios, i.e. optimizing the shape of rheological material properties to achieve different design objectives. We solve the modified Reynolds equation using the pseudo-spectral method, and describe a case study in full-film lubricated sliding where optimal fluid properties are identified. These material-agnostic property targets can then guide formulation of complex fluids which may use polymeric, colloidal, or other creative approaches to achieve the desired non-Newtonian properties.

Effects of Crystal Morphology on Singlet Exciton Fission in Diketopyrrolopyrrole Thin Films.

PubMed

Hartnett, Patrick E; Margulies, Eric A; Mauck, Catherine M; Miller, Stephen A; Wu, Yilei; Wu, Yi-Lin; Marks, Tobin J; Wasielewski, Michael R

2016-02-25

Singlet exciton fission (SF) is a promising strategy for increasing photovoltaic efficiency, but in order for SF to be useful in solar cells, it should take place in a chromophore that is air-stable, highly absorptive, solution processable, and inexpensive. Unlike many SF chromophores, diketopyrrolopyrrole (DPP) conforms to these criteria, and here we investigate SF in DPP for the first time. SF yields in thin films of DPP derivatives, which are widely used in organic electronics and photovoltaics, are shown to depend critically on crystal morphology. Time-resolved spectroscopy of three DPP derivatives with phenyl (3,6-diphenylpyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione, PhDPP), thienyl (3,6-di(thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione, TDPP), and phenylthienyl (3,6-di(5-phenylthiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione, PhTDPP) aromatic substituents in 100-200 nm thin films reveals that efficient SF occurs only in TDPP and PhTDPP (τSF = 220 ± 20 ps), despite the fact that SF is most exoergic in PhDPP. This result correlates well with the greater degree of π-overlap and closer π-stacking in TDPP (3.50 Å) and PhTDPP (3.59 Å) relative to PhDPP (3.90 Å) and demonstrates that SF in DPP is highly sensitive to the electronic coupling between adjacent chromophores. The triplet yield in PhTDPP films is determined to be 210 ± 35% by the singlet depletion method and 165 ± 30% by the energy transfer method, showing that SF is nearly quantitative in these films and that DPP derivatives are a promising class of SF chromophores for enhancing photovoltaic performance.

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors

NASA Astrophysics Data System (ADS)

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J.; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E.; Iacopi, Francesca

2015-10-01

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square-1 from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g-1. This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors.

PubMed

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E; Iacopi, Francesca

2015-10-30

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square(-1) from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g(-1). This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

Variation of optical properties of gel-derived VO2 thin films with temperature

NASA Astrophysics Data System (ADS)

Hou, Lisong; Lu, Song W.; Gan, Fuxi

1991-11-01

VO2 thin films are prepared on three kinds of substrates by the sol-gel dip-coating method followed by heat treatment under vacuum conditions. The IR and UV-visible spectra of the films are studied during heating and cooling between room temperature and 100 degree(s)C. The experimental results show that the films exhibit thermally-induced reversible phase transition and, as a result, the maximum changes in transmittance and reflectivity are 58% and 25%, respectively, in the case of vacuum heat treatment at 400 degree(s)C and silica glass substrates. The refractive index n decreases and the extinction coefficient k increases when heating these films from room temperature to 100 degree(s)C, and vice versa. The reasons why the optical constants and IR absorption spectra change so remarkably are discussed.

Dopant controlled photoinduced hydrophilicity and photocatalytic activity of SnO2 thin films

NASA Astrophysics Data System (ADS)

Talinungsang; Dhar Purkayastha, Debarun; Krishna, M. Ghanashyam

2018-07-01

The influence of Fe and Ni (1 wt.%) doping on the wettability and photocatalytic activity of sol-gel derived SnO2 films is reported. X-ray diffraction studies revealed the presence of tetragonal phase for both pure and doped SnO2 thin films. The crystallite size was of the order of 8 nm indicating the nanocrystalline nature of the films. The pure SnO2 films which were hydrophilic with a contact angle of 11.8° showed increase in contact angle with doping (38.7° for Fe and 48.6° for Ni). This is accompanied by decrease in surface energy and root mean square roughness, with doping of SnO2 film. In order to further increase the water contact angle, the film surfaces were modified using a layer of stearic acid. As a consequence, the water contact angles increased to 108°, 110° and 111° for the pure, Fe and Ni doped SnO2 films respectively, rendering them hydrophobic. Significantly, the unmodified surfaces that did not exhibit any change under UV irradiation showed photoinduced hydrophilicity on modification with stearic acid. There was a red-shift in the optical band gap of SnO2 films from 3.8 to 3.5 eV with doping, indicating the possibility of dopant controlled photocatalytic activity. This was confirmed by observing the photocatalytic degradation of an aqueous solution of methylene blue under UV irradiation. There was, indeed, significant improvement in the photocatalytic efficiency of the metal doped SnO2 thin film in comparison to undoped film. The current work, thus, demonstrates a simple method to chemically engineer the wettability and photocatalytic activity of SnO2 thin film surfaces.

X-ray structural investigation of nonsymmetrically and symmetrically alkylated [1]benzothieno[3,2-b]benzothiophene derivatives in bulk and thin films.

PubMed

Gbabode, Gabin; Dohr, Michael; Niebel, Claude; Balandier, Jean-Yves; Ruzié, Christian; Négrier, Philippe; Mondieig, Denise; Geerts, Yves H; Resel, Roland; Sferrazza, Michele

2014-08-27

A detailed structural study of the bulk and thin film phases observed for two potential high-performance organic semiconductors has been carried out. The molecules are based on [1]benzothieno[3,2-b]benzothiophene (BTBT) as conjugated core and octyl side groups, which are anchored either symmetrically at both sides of the BTBT core (C8-BTBT-C8) or nonsymmetrically at one side only (C8-BTBT). Thin films of different thickness (8-85 nm) have been prepared by spin-coating for both systems and analyzed by combining specular and grazing incidence X-ray diffraction. In the case of C8-BTBT-C8, the known crystal structure obtained from single-crystal investigations is observed within all thin films, down to a film thickness of 9 nm. In the case of C8-BTBT, the crystal structure of the bulk phase has been determined from X-ray powder diffraction data with a consistent matching of experimental and calculated X-ray diffraction patterns (Rwp = 5.8%). The packing arrangement of C8-BTBT is similar to that of C8-BTBT-C8, that is, consisting of a lamellar structure with molecules arranged in a "herringbone" fashion, yet with lamellae composed of two head-to-head (or tail-to-tail as the structure is periodic) superimposed molecules instead of only one molecule for C8-BTBT-C8. As for C8-BTBT-C8, we demonstrate that the same phase is observed in bulk and thin films for C8-BTBT whatever the film thickness investigated.

Effect of Annealing Temperature on Structural, Optical, and Electrical Properties of Sol-Gel Spin-Coating-Derived Cu2ZnSnS4 Thin Films

NASA Astrophysics Data System (ADS)

Hosseinpour, Rabie; Izadifard, Morteza; Ghazi, Mohammad Ebrahim; Bahramian, Bahram

2018-02-01

The effect of annealing temperature on structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films grown on a glass substrate by spin coating sol-gel technique has been studied. Structural study showed that all samples had kesterite crystalline structure. Scanning electron microscopy images showed that the crystalline quality of the samples was improved by heat treatment. Optical study showed that the energy gap values for the samples ranged from 1.55 eV to 1.78 eV. Moreover, good optical conductivity values (1012 S-1 to 1014 S-1) were obtained for the samples. Investigation of the electrical properties of the CZTS thin films showed that the carrier concentration increased significantly with the annealing temperature. The photoelectrical behavior of the samples revealed that the photocurrent under light illumination increased significantly. Overall, the results show that the CZTS thin films annealed at 500°C had better structural, optical, and electrical properties and that such CZTS thin films are desirable for use as absorber layers in solar cells. The photovoltaic properties of the CZTS layer annealed at 500°C were also investigated and the associated figure of merit calculated. The results showed that the fabricated ZnS-CZTS heterojunction exhibited good rectifying behavior but rather low fill factor.

Improved Stability and Performance of Visible Photoelectrochemical Water Splitting on Solution-Processed Organic Semiconductor Thin Films by Ultrathin Metal Oxide Passivation

DOE PAGES

Wang, Lei; Yan, Danhua; Shaffer, David W.; ...

2017-12-27

Solution-processable organic semiconductors have potentials as visible photoelectrochemical (PEC) water splitting photoelectrodes due to their tunable small band gap and electronic energy levels, but they are typically limited by poor stability and photocatalytic activity. In this study, we demonstrate the direct visible PEC water oxidation on solution-processed organic semiconductor thin films with improved stability and performance by ultrathin metal oxide passivation layers. N-type fullerene-derivative thin films passivated by sub-2 nm ZnO via atomic layer deposition enabled the visible PEC water oxidation at wavelengths longer than 600 nm in harsh alkaline electrolyte environments with up to 30 μA/cm 2 photocurrents atmore » the thermodynamic water-oxidation equilibrium potential and the photoanode half-lifetime extended to ~1000 s. The systematic investigation reveals the enhanced water oxidation catalytic activity afforded by ZnO passivation and the charge tunneling governing the hole transfer through passivation layers. Further enhanced PEC performances were realized by improving the bottom ohmic contact to the organic semiconductor, achieving ~60 μA/cm 2 water oxidation photocurrent at the equilibrium potential, the highest values reported for organic semiconductor thin films to our knowledge. The improved stability and performance of passivated organic photoelectrodes and discovered design rationales provide useful guidelines for realizing the stable visible solar PEC water splitting based on organic semiconductor thin films.« less

Improved Stability and Performance of Visible Photoelectrochemical Water Splitting on Solution-Processed Organic Semiconductor Thin Films by Ultrathin Metal Oxide Passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lei; Yan, Danhua; Shaffer, David W.

Solution-processable organic semiconductors have potentials as visible photoelectrochemical (PEC) water splitting photoelectrodes due to their tunable small band gap and electronic energy levels, but they are typically limited by poor stability and photocatalytic activity. In this study, we demonstrate the direct visible PEC water oxidation on solution-processed organic semiconductor thin films with improved stability and performance by ultrathin metal oxide passivation layers. N-type fullerene-derivative thin films passivated by sub-2 nm ZnO via atomic layer deposition enabled the visible PEC water oxidation at wavelengths longer than 600 nm in harsh alkaline electrolyte environments with up to 30 μA/cm 2 photocurrents atmore » the thermodynamic water-oxidation equilibrium potential and the photoanode half-lifetime extended to ~1000 s. The systematic investigation reveals the enhanced water oxidation catalytic activity afforded by ZnO passivation and the charge tunneling governing the hole transfer through passivation layers. Further enhanced PEC performances were realized by improving the bottom ohmic contact to the organic semiconductor, achieving ~60 μA/cm 2 water oxidation photocurrent at the equilibrium potential, the highest values reported for organic semiconductor thin films to our knowledge. The improved stability and performance of passivated organic photoelectrodes and discovered design rationales provide useful guidelines for realizing the stable visible solar PEC water splitting based on organic semiconductor thin films.« less

Optical Absorption and Visible Photoluminescence from Thin Films of Silicon Phthalocyanine Derivatives

PubMed Central

Rodríguez Gómez, Arturo; Moises Sánchez-Hernández, Carlos; Fleitman-Levin, Ilán; Arenas-Alatorre, Jesús; Carlos Alonso-Huitrón, Juan; Elena Sánchez Vergara, María

2014-01-01

The interest of microelectronics industry in new organic compounds for the manufacture of luminescent devices has increased substantially in the last decade. In this paper, we carried out a study of the usage feasibility of three organic bidentate ligands (2,6-dihydroxyanthraquinone, anthraflavic acid and potassium derivative salt of anthraflavic acid) for the synthesis of an organic semiconductor based in silicon phthalocyanines (SiPcs). We report the visible photoluminescence (PL) at room temperature obtained from thermal-evaporated thin films of these new materials. The surface morphology of these films was analyzed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM indicated that the thermal evaporation technique is an excellent resource in order to obtain low thin film roughness when depositing these kinds of compounds. Fourier transform infrared spectroscopy (FTIR) spectroscopy was employed to investigate possible changes in the intra-molecular bonds and to identify any evidence of crystallinity in the powder compounds and in the thin films after their deposition. FTIR showed that there was not any important change in the samples after the thermal deposition. The absorption coefficient (α) in the absorption region reveals non-direct transitions. Furthermore, the PL of all the investigated samples were observed with the naked eye in a bright background and also measured by a spectrofluorometer. The normalized PL spectra showed a Stokes shift ≈ 0.6 eV in two of our three samples, and no PL emission in the last one. Those results indicate that the Vis PL comes from a recombination of charge carriers between conduction band and valence band preceded by a non-radiative relaxation in the conduction band tails. PMID:28788200

Basic optics of effect materials.

PubMed

Jones, Steven A

2010-01-01

Effect materials derive their color and effect primarily from thin-film interference. Effect materials have evolved over the decades from simple guanine crystals to the complex multilayer optical structures of today. The development of new complex effect materials requires an understanding of the optics of effect materials. Such an understanding would also benefit the cosmetic formulator as these new effect materials are introduced. The root of this understanding begins with basic optics. This paper covers the nature of light, interference of waves, thin-film interference, color from interference, and color travel.

Statistical Origin of the Meyer-Neldel Rule in Amorphous Semiconductor Thin Film Transistors

NASA Astrophysics Data System (ADS)

Kikuchi, Minoru

1990-09-01

The origin of the Meyer-Neldel (MN) rule [G0{\\propto}\\exp (AEσ)] in the dc conductance of amorphous semiconductor thin-film transistors (TFT) is investigated based on the statistical model. We analyzed the temperature derivative of the band bending energy eVs(T) at the semiconductor interface as a function of Vs. It is shown that the condition for the validity of the rule, i.e., the linearity of the derivative deVs/dkT to Vs, certainly holds as a natural consequence of the interplay between the steep tail states and the low gap density of states spectrum. An expression is derived which relates the parameter A in the rule to the gap states spectrum. Model calculations show a magnitude of A in fair agreement with the experimental observations. The effects of the Fermi level position and the magnitude of the midgap density of states are also discussed.

Inorganic-polymer-derived dielectric films

DOEpatents

Brinker, C.J.; Keefer, K.D.; Lenahan, P.M.

1985-02-25

A method is disclosed for coating a substrate with a thin film of a predetermined porosity. The method comprises: depositing the thin film on the substrate from a non-gelled solution comprising at least one metal alkoxide of a polymeric network forming cation, water, an alcohol compatible with the hydrolysis and the polymerization of the metal alkoxide, and an acid or a base; prior to said depositing step, controlling the porosity and structure of said coating for a given composition of said solution exclusive of the acid or base component and the water component, by adjusting each of the water content, the pH, the temperature and the time of standing of said solution, increasing/descreasing the water content or the pH to increase/decrease the pore size of said coating, and increasing/decreasing the temperature or time of standing of said solution to increase/decrease the pore size of said coating; and curing said deposited film at a temperature effective for curing whereby there is obtained a thin film coating of a predetermined porosity on the substrate.

Synthesis, vapor growth, polymerization, and characterization of thin films of novel diacetylene derivatives of pyrrole. The use of computer modeling to predict chemical and optical properties of these diacetylenes and poly(diacetylenes)

NASA Technical Reports Server (NTRS)

Paley, M. S.; Frazier, D. O.; Abeledeyem, H.; Mcmanus, S. P.; Zutaut, S. E.

1992-01-01

In the present work two diacetylene derivatives of pyrrole which are predicted by semiempirical AM1 calculations to have very different properties, are synthesized; the polymerizability of these diacetylenes in the solid state is determined, and the results are compared to the computer predictions. Diacetylene 1 is novel in that the monomer is a liquid at room temperature; this may allow for the possibility of polymerization in the liquid state as well as the solid state. Thin poly(diacetylene) films are obtained from compound 1 by growing films of the monomer using vapor deposition and polymerizing with UV light; these films are then characterized. Interestingly, while the poly(diacetylene) from 1 does not possess good nonlinear optical properties, the monomer exhibits very good third-order effects (phase conjugation) in solution. Dilute acetone solutions of the monomer 1 give intensity-dependent refractive indices on the order of 10 exp -6 esu; these are 10 exp 6 times better than for CS2.

Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applications.

PubMed

Cushen, Julia D; Otsuka, Issei; Bates, Christopher M; Halila, Sami; Fort, Sébastien; Rochas, Cyrille; Easley, Jeffrey A; Rausch, Erica L; Thio, Anthony; Borsali, Redouane; Willson, C Grant; Ellison, Christopher J

2012-04-24

Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory-Huggins interaction parameters (χ), which enable formation of <10 nm features, etch selectivity between blocks for facile pattern transfer, and thin film self-assembly control. The present paper describes the synthesis and self-assembly of block copolymers composed of naturally derived oligosaccharides coupled to a silicon-containing polystyrene derivative synthesized by activators regenerated by electron transfer atom transfer radical polymerization. The block copolymers have a large χ and a low degree of polymerization (N) enabling formation of 5 nm feature diameters, incorporate silicon in one block for oxygen reactive ion etch contrast, and exhibit bulk and thin film self-assembly of hexagonally packed cylinders facilitated by a combination of spin coating and solvent annealing techniques. As observed by small angle X-ray scattering and atomic force microscopy, these materials exhibit some of the smallest block copolymer features in the bulk and in thin films reported to date.

Experimental analysis of silicon oxycarbide thin films and waveguides

NASA Astrophysics Data System (ADS)

Memon, Faisal Ahmed; Morichetti, Francesco; Somaschini, Claudio; Iseni, Giosue; Melloni, Andrea

2017-05-01

Silicon oxycarbide (SiOC) thin films are produced with reactive rf magnetron sputtering of a silicon carbide (SiC) target on Si (100) and SiO2/Si substrates under varying deposition conditions. The optical properties of the deposited SiOC thin films are characterized with spectroscopic ellispometry at multiple angles of incidence over a wavelength range 300- 1600 nm. The derived optical constants of the SiOC films are modeled with Tauc-Lorentz model. The refractive index n of the SiOC films range from 1.45 to 1.85 @ 1550 nm and the extinction coefficient k is estimated to be less than 10-4 in the near-infrared region above 1000 nm. The topography of SiOC films is studied with SEM and AFM giving rms roughness of 0.9 nm. Channel waveguides with a SiOC core with a refractive index of 1.7 have been fabricated to demonstrate the potential of sputtered SiOC for integrated photonics applications. Propagation loss as low as 0.39 +/- 0.05 dB/mm for TE and 0.41 +/- 0.05 dB/mm for TM polarizations at telecommunication wavelength 1550 nm is demonstrated.

Inorganic-polymer-derived dielectric films

DOEpatents

Brinker, C. Jeffrey; Keefer, Keith D.; Lenahan, Patrick M.

1987-01-01

A method of coating a substrate with a thin film of a polymer of predetermined porosity comprises depositing the thin film on the substrate from a non-gelled solution comprising at least one hydrolyzable metal alkoxide of a polymeric network forming cation, water, an alcohol compatible with the hydrolysis and the polymerization of the metal alkoxide, and an acid or a base, prior to depositing the film, controlling the structure of the polymer for a given composition of the solution exclusive of the acid or base component and the water component, (a) by adjusting each of the water content, the pH, and the temperature to obtain the desired concentration of alkoxide, and then adjusting the time of standing of the solution prior to lowering the temperature of the solution, and (b) lowering the temperature of the solution after the time of standing to about 15 degrees C. or lower to trap the solution in a state in which, after the depositing step, a coating of the desired porosity will be obtained, and curing the deposited film at a temperature effective for curing whereby there is obtained a thin film of a polymer of a predetermined porosity and corresponding pore size on the substrate.

Synthesis of LiCoO 2 thin films by sol/gel process

NASA Astrophysics Data System (ADS)

Porthault, H.; Le Cras, F.; Franger, S.

LiCoO 2 thin films were synthesized by sol/gel process using acrylic acid (AA) as chelating agent. The gel formulation was optimized by varying solvent (ethylene glycol or water) and precursors molar ratios (Li, Co, AA) in order to obtain a dense film for positive electrode of lithium batteries. The gel was deposited by spin-coating technique on an Au/TiO 2/SiN/SiO 2/Si substrate. Thin films were deposited by either single or multistep process to enhance the density of the thin film and then calcined during 5 h at 800 °C to obtain the R-3m phase (HT-LiCoO 2). A chemical characterization of the solution was realized by Fourier Transform Infrared (FTIR) spectroscopy. Thermal decomposition of precursors and gel was studied by Thermo Gravimetric Analyses (TGA). Further investigations were done to characterize rheologic behaviour of the gel and solvents affinity with the substrate. Crystallinity and morphology were analyzed respectively by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The formation of R-3m phase was confirmed by the electrochemical behaviour of the gel derived LiCoO 2. Cyclic voltammograms and galvanostatic cycling show typical curve shape of the HT-LiCoO 2.

Computational modeling of muscular thin films for cardiac repair

NASA Astrophysics Data System (ADS)

Böl, Markus; Reese, Stefanie; Parker, Kevin Kit; Kuhl, Ellen

2009-03-01

Motivated by recent success in growing biohybrid material from engineered tissues on synthetic polymer films, we derive a computational simulation tool for muscular thin films in cardiac repair. In this model, the polydimethylsiloxane base layer is simulated in terms of microscopically motivated tetrahedral elements. Their behavior is characterized through a volumetric contribution and a chain contribution that explicitly accounts for the polymeric microstructure of networks of long chain molecules. Neonatal rat ventricular cardiomyocytes cultured on these polymeric films are modeled with actively contracting truss elements located on top of the sheet. The force stretch response of these trusses is motivated by the cardiomyocyte force generated during active contraction as suggested by the filament sliding theory. In contrast to existing phenomenological models, all material parameters of this novel model have a clear biophyisical interpretation. The predictive features of the model will be demonstrated through the simulation of muscular thin films. First, the set of parameters will be fitted for one particular experiment documented in the literature. This parameter set is then used to validate the model for various different experiments. Last, we give an outlook of how the proposed simulation tool could be used to virtually predict the response of multi-layered muscular thin films. These three-dimensional constructs show a tremendous regenerative potential in repair of damaged cardiac tissue. The ability to understand, tune and optimize their structural response is thus of great interest in cardiovascular tissue engineering.

Room temperature electrical properties of solution derived p-type Cu{sub 2}ZnSnS{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Goutam Kumar; Dixit, Ambesh, E-mail: ambesh@iitj.ac.in

2016-05-06

Electrical properties of solution processed Cu{sub 2}ZnSnS{sub 4} (CZTS) compound semiconductor thin film structures on molybdenum (Mo) coated glass substrates are investigated using Mott-Schottky and Impedance spectroscopy measurements at room temperature. These measurements are carried out in sodium sulfate (Na{sub 2}SO{sub 4}) electrolytic medium at pH ~ 9.5. The inversion/depletion/accumulation regions are clearly observed in CZTS semiconductor −Na{sub 2}SO{sub 4} electrolyte interface and measured flat band potential is ~ −0.27 V for CZTS thin film electrode. The positive slope of the depletion region confirms the intrinsic p-type characteristics of CZTS thinfilms with ~ 2.5× 10{sup 19} holes/m{sup 3}. The high frequencymore » impedance measurements showed ~ 30 Ohm electrolyte resistance for the investigated configuration.« less

Deployable Propulsion, Power and Communication Systems for Solar System Exploration

NASA Technical Reports Server (NTRS)

Johnson, Les; Carr, John A.; Boyd, Darren

2017-01-01

NASA is developing thin-film based, deployable propulsion, power, and communication systems for small spacecraft that could provide a revolutionary new capability allowing small spacecraft exploration of the solar system. By leveraging recent advancements in thin films, photovoltaics, and miniaturized electronics, new mission-level capabilities will be enabled aboard lower-cost small spacecraft instead of their more expensive, traditional counterparts, enabling a new generation of frequent, inexpensive deep space missions. Specifically, thin-film technologies are allowing the development and use of solar sails for propulsion, small, lightweight photovoltaics for power, and omnidirectional antennas for communication. Like their name implies, solar sails 'sail' by reflecting sunlight from a large, lightweight reflective material that resembles the sails of 17th and 18th century ships and modern sloops. Instead of wind, the sail and the ship derive their thrust by reflecting solar photons. Solar sail technology has been discussed in the literature for quite some time, but it is only since 2010 that sails have been proven to work in space. Thin-film photovoltaics are revolutionizing the terrestrial power generation market and have been found to be suitable for medium-term use in the space environment. When mounted on the thin-film substrate, these photovoltaics can be packaged into very small volumes and used to generate significant power for small spacecraft. Finally, embedded antennas are being developed that can be adhered to thin-film substrates to provide lightweight, omnidirectional UHF and X-band coverage, increasing bandwidth or effective communication ranges for small spacecraft. Taken together, they may enable a host of new deep space destinations to be reached by a generation of spacecraft smaller and more capable than ever before.

Process-Parameter-Dependent Optical and Structural Properties of ZrO2MgO Mixed-Composite Films Evaporated from the solid Solution

NASA Technical Reports Server (NTRS)

Sahoo, N. K.; Shapiro, A. P.

1998-01-01

The process-parameter-dependent optical and structural properties of ZrO2MgO mixed-composite material have been investigated. Optical properties were derived from spectrophotometric measurements. By use of atomic force microscopy, x-ray diffraction analysis, and energy-dispersive x-ray (EDX) analysis, the surface morphology, grain size distributions, crystallographic phases, and process-dependent material composition of films have been investigated. EDX analysis made evident the correlation between the oxygen enrichment in the films prepared at a high level of oxygen pressure and the very low refractive index. Since oxygen pressure can be dynamically varied during a deposition process, coatings constructed of suitable mixed-composite thin films can benefit from continuous modulation of the index of refraction. A step modulation approach is used to develop various multilayer-equivalent thin-film devices.

Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method

NASA Astrophysics Data System (ADS)

Cheng, Zhenxiang; Kannan, Chinna Venkatasamy; Ozawa, Kiyoshi; Kimura, Hideo; Wang, Xiaolin

2006-07-01

Samarium doped bismuth titanate thin films with the composition of Bi3.25Sm0.75Ti3O12 and with strong preferred orientations along the c axis and the (117) direction were fabricated on Pt /TiO2/SiO2/Si substrate by pulsed laser ablation. Measurements on Pt /BSmT/Pt capacitors showed that the c-axis oriented film had a small remanent polarization (2Pr) of 5μC/cm2, while the highly (117) oriented film showed a 2Pr value of 54μC/cm2 at an electrical field of 268kV/cm and a coercive field Ec of 89kV/cm. This is different from the sol-gel derived c-axis oriented Bi3.15Sm0.85Ti3O12 film showing a 2Pr value of 49μC/cm2.

Acoustoelastic effect of textured (Ba,Sr)TiO{sub 3} thin films under an initial mechanical stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamel, Marwa; Mseddi, Souhir; Njeh, Anouar

Acoustoelastic (AE) analysis of initial stresses plays an important role as a nondestructive tool in current engineering. Two textured BST (Ba{sub 0.65}Sr{sub 0.35}TiO{sub 3}) thin films, with different substrate to target distance, were grown on Pt(111)/TiO{sub 2}/SiO{sub 2}/Si(001) substrate by rf-magnetron sputtering deposition techniques. A conventional “sin{sup 2} ψ” method to determine residual stress and strain in BST films by X-ray diffraction is applied. A laser acoustic waves (LA-waves) technique is used to generate surface acoustic waves (SAW) propagating in both samples. Young's modulus E and Poisson ratio ν of BST films in different propagation directions are derived from the measuredmore » dispersion curves. Estimation of effective second-order elastic constants of BST thin films in stressed states is served in SAW study. This paper presents an original investigation of AE effect in prestressed Ba{sub 0.65}Sr{sub 0.35}TiO{sub 3} films, where the effective elastic constants and the effect of texture on second and third order elastic tensor are considered and used. The propagation behavior of Rayleigh and Love waves in BST thin films under residual stress is explored and discussed. The guiding velocities affected by residual stresses, reveal some shifts which do not exceed four percent mainly in the low frequency range.« less

Structure and physicochemical properties of thin film photosemiconductor cells based on porphine derivatives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kazak, A. V., E-mail: alexkazak86@gmail.com; Usol’tseva, N. V.; Smirnova, A. I.

2016-05-15

Photosemiconductor thin films based on two organic porphine derivatives have been investigated. These compounds have different pendent groups; the film morphology, along with the specific fabrication technique, is determined to a great extent by these groups. The films have been fabricated by vacuum sputtering and using the Langmuir−Schaefer method. According to the atomic force microscopy (AFM) data, the Langmuir−Schaefer films are more homogeneous than the sputtered ones. It is shown that the sputtered films based on substituted porphine have a looser stacking than the initial analog. A spectroscopy study revealed a bathochromic shift of the Soret band in the Langmuir−Schaefermore » films–sputtered films series. This shift is explained by the increase in the concentration and size of molecular aggregates in sputtered films. It is shown that a polycrystalline C{sub 60} fullerene film deposited onto an amorphous substituted porphine layer improves the photoelectric characteristics of the latter. Both the time stability of the photodiode structure and its ampere‒watt sensitivity increase (by a factor of 10 in the transition regime). The steady-state current does not change. The effect of polarity reversal of the photovoltaic signal is observed in a planar C{sub 60}‒substituted metalloporphine heterostructure, which is similar to the pyroelectric effect. The polarity reversal can be explained by the contribution of the trap charge and discharge current at the interface between the amorphous photosemiconductor and crystalline photosemiconductor to the resulting photoelectric current.« less

Tuning magnetic exchange interactions in crystalline thin films of substituted Cobalt Phthalocyanine

NASA Astrophysics Data System (ADS)

Rawat, Naveen; Manning, Lane; Hua, Kim-Ngan; Headrick, Randall; Bishop, Michael; McGill, Stephen; Waterman, Rory; Furis, Madalina

Magnetic exchange interactions in diluted organometallic crystalline thin film alloys of Phthalocyanines (Pcs) made of a organo-soluble derivatives of Cobalt Pc and metal-free (H2Pc) molecule and is investigated. To this end, we synthesized a organosoluble CoPc and successfully employed a novel solution-based pen-writing deposition technique to fabricate long range ordered thin films of mixtures of different ratios ranging from 1:1 to 10:1 H2Pc:CoPc. Our previous magnetic circular dichroism (MCD) results on the parent CoPc crystalline thin films identified different electronic states mediating exchange interactions and indirect exchange interaction competing with superexchange interaction. This understanding of spin-dependent exchange interaction between delocalized π-electrons with unpaired d spins along with the excitonic delocalization character enabled the further tuning of these interactions by essentially varying the spatial distance between the spins. Furthermore, high magnetic field (B < 25 T) MCD and magneto-photoluminescence show evidence of spin-polarized band-edge excitons in the same materials. This work was possible due to support by the National Science Foundation, Division of Materials Research MRI, CAREER and EPM program Awards: DMR-0722451, DMR-0821268, DMR-1307017 and DMR-1056589, DMR-1229217.

Berkovich Nanoindentation on AlN Thin Films.

PubMed

Jian, Sheng-Rui; Chen, Guo-Ju; Lin, Ting-Chun

2010-03-31

Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm-3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young's modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young's modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple "pop-ins" observed in the load-displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load-displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

Simulation of Thin Film Equations on an Eye-Shaped Domain with Moving Boundary

NASA Astrophysics Data System (ADS)

Brosch, Joseph; Driscoll, Tobin; Braun, Richard

During a normal eye blink, the upper lid moves, and during the upstroke the lid paints a thin tear film over the exposed corneal and conjunctival surfaces. This thin tear film may be modeled by a nonlinear fourth-order PDE derived from lubrication theory. A major stumbling block in the numerical simulation of this model is to include both the geometry of the eye and the movement of the eyelid. Using a pair of orthogonal and conformal maps, we transform a computational box into a rough representation of a human eye where we proceed to simulate the thin tear film equations. Although we give up some realism, we gain spectrally accurate numerical methods on the computational box. We have applied this method to the heat equation on the blinking domain with both Dirichlet and no-flux boundary conditions, in each case demonstrating at least 10 digits of accuracy.. We are able to perform these simulations very quickly (generally in under a minute) using a desktop version of MATLAB. This project was supported by Grant 1022706 (R.J.B., T.A.D., J.K.B.) from the NSF.

Organic Solar Cells Based on Electrodeposited Polyaniline Films

NASA Astrophysics Data System (ADS)

Inoue, Kei; Akiyama, Tsuyoshi; Suzuki, Atsushi; Oku, Takeo

2012-04-01

Polyaniline thin films as hole transporting layers were fabricated on transparent indium-tin-oxide electrodes by electrodeposition of aniline in an aqueous H2SO4 electrolyte solution. Emerald-green polyaniline films were obtained, which showed stable redox waves. A mixed solution of polythiophene and fullerene derivative was spin-coated onto the electrodeposited polyaniline film. After the modification of titanium oxide film on the surface of the polythiophene/fullerene layer, an aluminum electrode was fabricated by vacuum deposition. The obtained solar cells generated stable photocurrent and photovoltage under light illumination.

Influence of Ga doping ratio on the saturable absorption mechanism in Ga doped ZnO thin solid films processed by sol-gel spin coating technique

NASA Astrophysics Data System (ADS)

Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.; Byrappa, K.

2017-03-01

In the present study, the nonlinear optical properties of sol-gel spin coated gallium doped zinc oxide (GZO) thin solid films are explored with nanosecond laser pulses using the z-scan technique. The higher doping ratios of Ga result in a large redshift of the energy gap (0.38 eV) due to the existence of enhanced grain boundary defects in GZO films. A positive nonlinear absorption coefficient is observed in undoped 1 at.wt.% GZO and 2 at.wt.% GZO films, and a negative nonlinear absorption coefficient in 3 at.wt.% GZO film. Fewer defects in undoped 1% GZO and 2% GZO films resulted in reverse saturable absorption (RSA), whereas a saturable absorption (SA) mechanism is observed in 3% GZO films and is attributed to the enhanced defect concentration in the band structure of GZO. However, all the films showed a self-defocusing mechanism, derived by a closed aperture z-scan technique. The present work sheds light on the defect mechanism involved in the observed nonlinear properties of GZO films.

Composites in small and simple devices to increase mixing on detector surfaces

NASA Astrophysics Data System (ADS)

Hernandez, L. F.; Lima, R. R.; Leite, A. R.; Fachini, E. R.; Silva, M. L. P.

2013-03-01

This work aims at three different applications for the betterment of plasma generated-composite thin films: pre-mixing, spray formation in miniaturized structures and an increase in the performance of detector surfaces. Miniaturized structures were projected, simulated with FEMLAB® 3.2 software and then constructed. Clustered films made from tetraethoxysilane (TEOS) and nonafluoro(iso)butyl ether (HFE®) precursors were deposited on silicon, acrylic and quartz substrates for different kinds of film characterization/or in the projected structures. Physical and chemical characterization guided the selection of best films previous to/after UVC exposure. The active surfaces (plasma-deposited films) in structures were modified by UVC exposure and then tested. The applications include pre-mixing of liquids and/or spray formation, best results being obtained with surface covered by derivative-HFE films, which acted as passivation layers. Preliminary results show good humidity sensing for TEOS-derivative films.

Influence of the side chain and substrate on polythiophene thin film surface, bulk, and buried interfacial structures.

PubMed

Xiao, Minyu; Jasensky, Joshua; Zhang, Xiaoxian; Li, Yaoxin; Pichan, Cayla; Lu, Xiaolin; Chen, Zhan

2016-08-10

The molecular structures of organic semiconducting thin films mediate the performance of various devices composed of such materials. To fully understand how the structures of organic semiconductors alter on substrates due to different polymer side chains and different interfacial interactions, thin films of two kinds of polythiophene derivatives with different side-chains, poly(3-hexylthiophene) (P3HT) and poly(3-potassium-6-hexanoate thiophene) (P3KHT), were deposited and compared on various surfaces. A combination of analytical tools was applied in this research: contact angle goniometry and X-ray photoelectron spectroscopy (XPS) were used to characterize substrate dielectric surfaces with varied hydrophobicity for polymer film deposition; X-ray diffraction and UV-vis spectroscopy were used to examine the polythiophene film bulk structure; sum frequency generation (SFG) vibrational spectroscopy was utilized to probe the molecular structures of polymer film surfaces in air and buried solid/solid interfaces. Both side-chain hydrophobicity and substrate hydrophobicity were found to mediate the crystallinity of the polythiophene film, as well as the orientation of the thiophene ring within the polymer backbone at the buried polymer/substrate interface and the polymer thin film surface in air. For the same type of polythiophene film deposited on different substrates, a more hydrophobic substrate surface induced thiophene ring alignment with the surface normal at both the buried interface and on the surface in air. For different films (P3HT vs. P3KHT) deposited on the same dielectric substrate, a more hydrophobic polythiophene side chain caused the thiophene ring to align more towards the surface at the buried polymer/substrate interface and on the surface in air. We believe that the polythiophene surface, bulk, and buried interfacial molecular structures all influence the hole mobility within the polythiophene film. Successful characterization of an organic conducting thin film surface, buried interfacial, and bulk structures is a first crucial step in understanding the structure-function relationship of such films in order to optimize device performance. An in-depth understanding on how the side-chain influences the interfacial and surface polymer orientation will guide the future molecular structure design of organic semiconductors.

Novel method in solving non-polarizing condition in frustrated total internal reflection layers

NASA Astrophysics Data System (ADS)

Shi, Jin Hui; Wang, Zheng Ping

2008-03-01

When used at oblique angles of incidence, the reflectance and transmittance of thin films exhibit strong polarization effects, particularly for the films inside a glass cube. However, the polarization effects are undesirable in many applications. Novel non-polarizing beam splitter designs are shown, non-polarizing beam splitters with unique optical thin films are achieved through combination of interference and frustrated total internal reflection, the non-polarizing condition expressions based on frustrated total internal reflection is derived, and applied examples of the non-polarizing beam splitters are also presented with the optimization technique and the results of Rp=(50+/-0.4)% and Rs=(50+/-0.4)% in the wavelength range of 500-600nm are obtained.

Theoretical analysis of non-polarizing beam splitters with appropriate amplitude and phase

NASA Astrophysics Data System (ADS)

Shi, Jin Hui; Wang, Zheng Ping; Guan, Chun Ying

2009-04-01

When used at oblique angles of incidence, the reflectance and transmittance of thin films exhibit strong polarization effects, particularly for the films inside a glass cube. However, the polarization effects are undesirable in many applications. Novel non-polarizing beam splitter designs are shown. Non-polarizing beam splitters with unique optical thin films are achieved through the combination of interference and frustrated total internal reflection. The non-polarizing condition expressions based on frustrated total internal reflection are derived, and examples of the non-polarizing beam splitters are also presented with the optimization technique and the results of Rp=(50±0.5)%, Rs=(50±0.5)%, and Δr=(0±0.3) in the wavelength range of 400-700 nm are obtained.

Changes in the temperature-dependent specific volume of supported polystyrene films with film thickness.

PubMed

Huang, Xinru; Roth, Connie B

2016-06-21

Recent studies have measured or predicted thickness-dependent shifts in density or specific volume of polymer films as a possible means of understanding changes in the glass transition temperature Tg(h) with decreasing film thickness with some experimental works claiming unrealistically large (25%-30%) increases in film density with decreasing thickness. Here we use ellipsometry to measure the temperature-dependent index of refraction of polystyrene (PS) films supported on silicon and investigate the validity of the commonly used Lorentz-Lorenz equation for inferring changes in density or specific volume from very thin films. We find that the density (specific volume) of these supported PS films does not vary by more than ±0.4% of the bulk value for film thicknesses above 30 nm, and that the small variations we do observe are uncorrelated with any free volume explanation for the Tg(h) decrease exhibited by these films. We conclude that the derivation of the Lorentz-Lorenz equation becomes invalid for very thin films as the film thickness approaches ∼20 nm, and that reports of large density changes greater than ±1% of bulk for films thinner than this likely suffer from breakdown in the validity of this equation or in the difficulties associated with accurately measuring the index of refraction of such thin films. For larger film thicknesses, we do observed small variations in the effective specific volume of the films of 0.4 ± 0.2%, outside of our experimental error. These shifts occur simultaneously in both the liquid and glassy regimes uniformly together starting at film thicknesses less than ∼120 nm but appear to be uncorrelated with Tg(h) decreases; possible causes for these variations are discussed.

Pentacene-based organic thin film transistors, integrated circuits, and active matrix displays on polymeric substrates

NASA Astrophysics Data System (ADS)

Sheraw, Christopher Duncan

2003-10-01

Organic thin film transistors are attractive candidates for a variety of low cost, large area commercial electronics including smart cards, RF identification tags, and flat panel displays. Of particular interest are high performance organic thin film transistors (TFTs) that can be fabricated on flexible polymeric substrates allowing low-cost, lightweight, rugged electronics such as flexible active matrix displays. This thesis reports pentacene organic thin film transistors fabricated on flexible polymeric substrates with record performance, the fastest photolithographically patterned organic TFT integrated circuits on polymeric substrates reported to date, and the fabrication of the organic TFT backplanes used to build the first organic TFT-driven active matrix liquid crystal display (AMLCD), also the first AMLCD on a flexible substrate, ever reported. In addition, the first investigation of functionalized pentacene derivatives used as the active layer in organic thin film transistors is reported. A low temperature (<110°C) process technology was developed allowing the fabrication of high performance organic TFTs, integrated circuits, and large TFT arrays on flexible polymeric substrates. This process includes the development of a novel water-based photolithographic active layer patterning process using polyvinyl alcohol that allows the patterning of organic semiconductor materials for elimination of active layer leakage current without causing device degradation. The small molecule aromatic hydrocarbon pentacene was used as the active layer material to fabricate organic TFTs on the polymeric material polyethylene naphthalate with field-effect mobility as large as 2.1 cm2/V-s and on/off current ratio of 108. These are the best values reported for organic TFTs on polymeric substrates and comparable to organic TFTs on rigid substrates. Analog and digital integrated circuits were also fabricated on polymeric substrates using pentacene TFTs with propagation delay as low as 38 musec and clocked digital circuits that operated at 1.1 kHz. These are the fastest photolithographically patterned organic TFT circuits on polymeric substrates reported to date. Finally, 16 x 16 pentacene TFT pixel arrays were fabricated on polymeric substrates and integrated with polymer dispersed liquid crystal to build an AMLCD. The pixel arrays showed good optical response to changing data signals when standard quarter-VGA display waveforms were applied. This result marks the first organic TFT-driven active matrix liquid crystal display ever reported as well as the first active matrix liquid crystal display on a flexible polymeric substrate. Lastly, functionalized pentacene derivatives were used as the active layer in organic thin film transistor materials. Functional groups were added to the pentacene molecule to influence the molecular ordering so that the amount of pi-orbital overlap would be increased allowing the potential for improved field-effect mobility. The functionalization of these materials also improves solubility allowing for the possibility of solution-processed devices and increased oxidative stability. Organic thin film transistors were fabricated using five different functionalized pentacene active layers. Devices based on the pentacene derivative triisopropylsilyl pentacene were found to have the best performance with field-effect mobility as large as 0.4 cm 2/V-s.

Semiconducting boron carbide thin films: Structure, processing, and diode applications

NASA Astrophysics Data System (ADS)

Bao, Ruqiang

The high energy density and long lifetime of betavoltaic devices make them very useful to provide the power for applications ranging from implantable cardiac pacemakers to deep space satellites and remote sensors. However, when made with conventional semiconductors, betavoltaic devices tend to suffer rapid degradation as a result of radiation damage. It has been suggested that the degradation problem could potentially be alleviated by replacing conventional semiconductors with a radiation hard semiconducting material like icosahedral boron carbide. The goal of my dissertation was to better understand the fundamental properties and structure of boron carbide thin films and to explore the processes to fabricate boron carbide based devices for voltaic applications. A pulsed laser deposition system and a radio frequency (RF) magnetron sputtering deposition system were designed and built to achieve the goals. After comparing the experimental results obtained using these two techniques, it was concluded that RF magnetron sputtering deposition technique is a good method to make B4C boron carbide thin films to fabricate repeatable and reproducible voltaic devices. The B4C thin films deposited by RF magnetron sputtering require in situ dry pre-cleaning to make ohmic contacts for B4C thin films to fabricate the devices. By adding another RF sputtering to pre-clean the substrate and thin films, a process to fabricate B4C / n-Si heterojunctions has been established. In addition, a low energy electron accelerator (LEEA) was built to mimic beta particles emitted from Pm147 and used to characterize the betavoltaic performance of betavoltaic devices as a function of beta energy and beta flux as well as do accelerated lifetime testing for betavoltaic devices. The energy range of LEEA is 20 - 250 keV with the current from several nA to 50 muA. High efficiency Si solar cells were used to demonstrate the powerful capabilities of LEEA, i.e., the characterization of betavoltaic performance and the accelerated lifetime test of betavoltaic devices. Structural analysis by X-ray diffraction and high resolution transmission electron microscopy showed that the prepared B4C thin films are amorphous. The presence of icosahedrons, which account for the radiation hardness of icosahedral boron rich solids, in the amorphous B4C thin films was supported by Fourier transform infrared spectroscopy. The pair distribution functions derived from selected area diffraction pattern of amorphous B 4C thin films showed that the short range order structure of amorphous B4C thin films is similar to beta-rhombohedral boron but with a shorter distance. The investigation of electrical properties of B4 C thin films showed that the resistivity of B4C thin films ranges from 695 O-cm to 9650 O-cm depending on the deposition temperature; the direct and indirect bandgaps for B4C thin films are 2.776 - 2.898 eV and 1.148 - 1.327 eV, respectively; the effective lifetime of excess charge carrier is close to 0.1 ms for B4C thin film deposited at room temperature and approximates to 1 ms for those deposited at 175 °C to 500 °C. Based on structural characterization and electrical properties of B4C thin films, a structural model of B4C thin films was proposed and supported by nanoindenter experiments, i.e., the hardness of thin films deposited at temperature in the range of 275 °C to 350 °C is lower than that of the films deposited at RT and 650 °C. Heterojunctions of B4C / n-Si (100) possessing photovoltaic response have been fabricated. The suitable deposition temperature for B 4C thin film to fabricate photovoltaic device is from 175 °C to 350 °C. When the Si substrate surface was not pre-cleaned before depositing B4C thin film, the B4C / n-Si (100) heterojunction has better photovoltaic responses, presumably because there were no sputter-produced defects on the surface of Si (100) substrate. Until now, the best achievable photovoltaic performance is B4C / n-Si (100) heterojunction with 200 nm thick B4C thin film when the Si (100) substrate surface was not pre-cleaned by RF sputtering. When this heterojunction was characterized using solar simulator with air mass 1.5 spectra, the short circuit current density is 1.484 mA/cm2, the open circuit voltage is about 0.389 V, and the power conversion efficiency is about 0.214 %. In addition, B5C thin films deposited by plasma enhanced chemical vapor deposition were used to make some of the devices studied in this dissertation. It was found that the Si-doped BC / n-Si (111) heterojunctions also demonstrates their photovoltaic and betavoltaic responses. Even after irradiated by a 120 keV electron beam to a fluence of 4.38x1017 electrons/cm 2, the heterojunctions still posses betavoltaic behavior and their responses to the incident irradiance density are similar to that before irradiation.

Thin-film nano-thermogravimetry applied to praseodymium-cerium oxide films at high temperatures

NASA Astrophysics Data System (ADS)

Schröder, Sebastian; Fritze, Holger; Bishop, Sean; Chen, Di; Tuller, Harry L.

2018-05-01

High precision measurements of oxygen nonstoichiometry δ in thin film metal oxides MaOb±δ at elevated temperatures and controlled oxygen partial pressures pO2 are reported with the aid of resonant microbalances. The resonant microbalances applied here consisted of y-cut langasite (La3Ga5SiO14) and CTGS (Ca3TaGa3Si2O14) piezoelectric resonators, operated in the thickness shear mode at ˜5 MHz. Measurements of variations in δ of Pr0.1Ce0.9O2-δ (PCO) films are reported for the oxygen partial pressure range from 10-8 bar to 0.2 bar at 700 °C, and these results were found to be in good agreement with previously reported oxygen nonstoichiometry δ data derived from chemical capacitance studies. The PCO thin-films were deposited via pulsed laser deposition on both sides of the resonators, whose series resonance frequency was tracked, converted into mass changes and, finally, into nonstoichiometry. The nonstoichiometry was observed to reach a plateau as the oxygen partial pressure dropped below about 10-5 bar, the behavior being attributed to the full reduction of Pr to the trivalent state. These resonators enable stable operation up to temperatures above 1000 °C, thereby maintaining high mass resolution suitable for determining oxygen nonstoichiometry variations in thin films deposited on such resonators. For the given experimental conditions, a mass resolution of ˜50 ng was achieved at 700 °C with the CTGS resonator.

Linear and nonlinear optical properties of Sb-doped GeSe2 thin films

NASA Astrophysics Data System (ADS)

Zhang, Zhen-Ying; Chen, Fen; Lu, Shun-Bin; Wang, Yong-Hui; Shen, Xiang; Dai, Shi-Xun; Nie, Qiu-Hua

2015-06-01

Sb-doped GeSe2 chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb-Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10-18 m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10-10 m/W. These excellent properties indicate that Sb-doped Ge-Se films have a good prospect in the applications of nonlinear optical devices. Project supported by the National Key Basic Research Program of China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant No. 61377061), the Young Leaders of Academic Climbing Project of the Education Department of Zhejiang Province, China (Grant No. pd2013092), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B217), and the K. C. Wong Magna Fund in Ningbo University, China.

Thin film flow along a periodically-stretched elastic beam

NASA Astrophysics Data System (ADS)

Boamah Mensah, Chris; Chini, Greg; Jensen, Oliver

2017-11-01

Motivated by an application to pulmonary alveolar micro-mechanics, a system of partial differential equations is derived that governs the motion of a thin liquid film lining both sides of an inertia-less elastic substrate. The evolution of the film mass distribution is described by invoking the usual lubrication approximation while the displacement of the substrate is determined by employing a kinematically nonlinear Euler-Bernoulli beam formulation. In the parameter regime of interest, the axial strain can be readily shown to be a linear function of arc-length specified completely by the motion of ends of the substrate. In contrast, the normal force balance on the beam yields an equation for the substrate curvature that is fully coupled to the time-dependent lubrication equation. Linear analyses of both a stationary and periodically-stretched flat substrate confirm the potential for buckling instabilities and reveal an upper bound on the dimensionless axial stiffness for which the coupled thin-film/inertial-less-beam model is well-posed. Numerical simulations of the coupled system are used to explore the nonlinear development of the buckling instabilities.

A numerical study of mobility in thin films of fullerene derivatives.

PubMed

Mackenzie, Roderick C I; Frost, Jarvist M; Nelson, Jenny

2010-02-14

The effect of functional group size on the electron mobility in films of fullerene derivatives is investigated numerically. A series of four C(60) derivatives are formed by attaching saturated hydrocarbon chains to the C(60) cage via a methano bridge. For each of the derivatives investigated, molecular dynamics is used to generate a realistic material morphology. Quantum chemical methods are then used to calculate intermolecular charge transfer rates. Finally, Monte Carlo methods are used to simulate time-of-flight experiments and thus calculate the electron mobility. It is found that as the length of the aliphatic side chain increases, the configurational disorder increases and thus the mobility decreases.

Solubility- and temperature-driven thin film structures of polymeric thiophene derivatives for high performance OFET applications

NASA Astrophysics Data System (ADS)

LeFevre, Scott W.; Bao, Zhenan; Ryu, Chang Y.; Siegel, Richard W.; Yang, Hoichang

2007-09-01

It has been shown that high charge mobility in solution-processible organic semiconductor-based field effect transistors is due in part to a highly parallel π-π stacking plane orientation of the semiconductors with respect to gate-dielectric. Fast solvent evaporation methods, generally, exacerbate kinetically random crystal orientations in the films deposited, specifically, from good solvents. We have investigated solubility-driven thin film structures of thiophene derivative polymers via spin- and drop-casting with volatile solvents of a low boiling point. Among volatile solvents examined, marginal solvents, which have temperature-dependent solubility for the semiconductors (e.g. methylene chloride for regioregular poly(3-alkylthiophene)s), can be used to direct the favorable crystal orientation regardless of solvent drying time, when the temperature of gate-dielectrics is held to relatively cooler than the warm solution. Grazing-incidence X-ray diffraction and atomic force microscopy strongly support that significant control of crystal orientation and mesoscale morphology using a "cold" substrate holds true for both drop and spin casting. The effects of physiochemical post-modificaiton on film crystal structures and morphologies of poly(9,9-dioctylfluorene-co-bithiophene) have also been investigated.

Nanometer-Thick Yttrium Iron Garnet Film Development and Spintronics-Related Study

NASA Astrophysics Data System (ADS)

Chang, Houchen

In the last decade, there has been a considerable interest in using yttrium iron garnet (Y3Fe5O12, YIG) materials for magnetic insulator-based spintronics studies. This interest derives from the fact that YIG materials have very low intrinsic damping. The development of YIG-based spintronics demands YIG films that have a thickness in the nanometer (nm) range and at the same time exhibit low damping similar to single-crystal YIG bulk materials. This dissertation reports comprehensive experimental studies on nm-thick YIG films by magnetron sputtering techniques. Optimization of sputtering control parameters and post-deposition annealing processes are discussed in detail. The feasibility of low-damping YIG nm-thick film growth via sputtering is demonstrated. A 22.3-nm-thick YIG film, for example, shows a Gilbert damping constant of less than 1.0 x 10-4. The demonstration is of great technological significance because sputtering is a thin film growth technique most widely used in industry. The spin Seebeck effect (SSE) refers to the generation of spin voltage in a ferromagnet (FM) due to a temperature gradient. The spin voltage can produce a pure spin current into a normal metal (NM) that is in contact with the FM. Various theoretical models have been proposed to interpret the SSE, although a complete understanding of the effect has not been realized yet. In this dissertation the study of the role of damping on the SSE in YIG thin films is conducted for the first time. With the thin film development method mentioned in the last paragraph, a series of YIG thin films showing very similar structural and static magnetic properties but rather different Gilbert damping values were prepared. A Pt capping layer was grown on each YIG film to probe the strength of the SSE. The experimental data show that the YIG films with a smaller intrinsic Gilbert damping shows a stronger SSE. The majority of the previous studies on YIG spintronics utilized YIG films that were grown on single-crystal Gd3Ga5O 12 (GGG) substrates first and then capped with either a thin NM layer or a thin topological insulator (TI) layer. The use of the GGG substrates is crucial in terms of realizing high-quality YIG films, because GGG not only has a crystalline structure almost perfectly matching that of YIG but is also extremely stable at high temperature in oxygen that is the condition needed for YIG crystallization. The feasibility of growing high-quality YIG thin films on Pt thin films is explored in this dissertation. This work is of great significance because it enables the fabrication of sandwich-like NM/YIG/NM or NM/YIG/TI structures. Such tri-layered structures will facilitate various interesting fundamental studies as well as device developments. The demonstration of a magnon-mediated electric current drag phenomenon is presented as an example for such tri-layered structures.

Effect of ethanol variation on the internal environment of sol-gel bulk and thin films with aging.

PubMed

Gupta, R; Mozumdar, S; Chaudhury, N K

2005-10-15

Sol-gel derived bulk and thin films were prepared from different compositions at low pH ( approximately 2.0) containing varying concentrations of ethanol from 15 to 60% at constant water (H(2)O)/tetraethyl-orthosilicate (TEOS) ratio (R=4). The fluorescence microscopic and spectroscopic measurements on fluorescent probe, Hoechst 33258 (H258) entrapped in these compositions were carried out at different days of storage to monitor the effects of concentration of ethanol on the internal environment of sol-gel materials. Fluorescence microscopic observations on sol-gel thin films, prepared by dip coating technique depicted uniform and cracked surface at withdrawal speed 1cm/min (high speed) and 0.1cm/min (low speed) respectively, which did not change during aging. Fluorescence spectral measurements showed emission maximum of H258 at approximately 535 nm in fresh sols at all concentrations of ethanol which depicted slight blue shift to 512 nm during aging in bulk. No such spectral shift has been observed in sol-gel thin films coated at high speed whereas thin films coated at low speed clearly showed an additional band at approximately 404 nm at 45 and 60% concentration of ethanol after about one month of storage. Analysis of the fluorescence lifetime data indicated single exponential decay (1.6-1.8 ns) in fresh sol and from third day onwards, invariably double exponential decay with a short (tau(1)) and a long (tau(2)) component were observed in sol-gel bulk with a dominant tau(1) at approximately 1.2 ns at all concentrations of ethanol. A double exponential decay consisting of a short component (tau(1)) at approximately 0.2 ns and a long component (tau(2)) at approximately 3.5 ns were observed at all ethanol concentrations in both fresh and aged sol-gel thin films. Further, distribution analysis of lifetimes of H258 showed two mean lifetimes with increased width in aged bulk and thin films. These results are likely to have strong implications in designing the internal environment for applications in biosensors.

Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meral, Kadem, E-mail: kademm@atauni.edu.tr; Arik, Mustafa, E-mail: marik@tatauni.edu.tr; Onganer, Yavuz, E-mail: yonganer@atauni.edu.tr

Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasingmore » the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.« less

Preparation and bioactive properties of nanocrystalline hydroxyapatite thin films obtained by conversion of atomic layer deposited calcium carbonate.

PubMed

Holopainen, Jani; Kauppinen, Kyösti; Mizohata, Kenichiro; Santala, Eero; Mikkola, Esa; Heikkilä, Mikko; Kokkonen, Hanna; Leskelä, Markku; Lehenkari, Petri; Tuukkanen, Juha; Ritala, Mikko

2014-09-01

Nanocrystalline hydroxyapatite thin films were fabricated on silicon and titanium by atomic layer deposition (ALD) of CaCO3 and its subsequent conversion to hydroxyapatite by diammonium hydrogen phosphate (DAP) solution. The effects of conversion process parameters to crystallinity and morphology of the films were examined. DAP concentration was found to be critical in controlling the crystal size and homogeneity of the films. The hydroxyapatite phase was identified by XRD. ToF-elastic recoil detection analysis studies revealed that the films are calcium deficient in relation to hydroxyapatite with a Ca/P ratio of 1.39 for films converted with 0.2 M DAP at 95 °C. The coatings prepared on titanium conformally follow the rough surface topography of the substrate, verifying that the good step coverage of the ALD method was maintained in the conversion process. The dissolution tests revealed that the coating was nondissolvable in the cell culture medium. Annealing the coated sample at 700 °C for 1 h seemed to enhance its bonding properties to the substrate. Also, the biocompatibility of the coatings was confirmed by human bone marrow derived cells in vitro. The developed method provides a new possibility to produce thin film coatings on titanium implants with bone-type hydroxyapatite that is biocompatible with human osteoblasts and osteoclasts.

Plant-derived cis-β-ocimene as a precursor for biocompatible, transparent, thermally-stable dielectric and encapsulating layers for organic electronics.

PubMed

Bazaka, Kateryna; Destefani, Ryan; Jacob, Mohan V

2016-12-09

This article presents low-temperature, one-step dry synthesis of optically transparent thermally-stable, biocompatible cis-β-ocimene-based thin films for applications as interlayer dielectric and encapsulating layer for flexible electronic devices, e.g. OLEDs. Morphological analysis of thin films shows uniform, very smooth (R q  < 1 nm) and defect-free moderately hydrophilic surfaces. The films are optically transparent, with a refractive index of ~1.58 at 600 nm, an optical band gap of ~2.85 eV, and dielectric constant of 3.5-3.6 at 1 kHz. Upon heating, thin films are chemically and optically stable up to at least 200 °C, where thermal stability increases for films manufactured at higher RF power as well as for films deposited away from the plasma glow. Heating of the sample increases the dielectric constant, from 3.7 (25 °C) to 4.7 (120 °C) at 1 kHz for polymer fabricated at 25 W. Polymers are biocompatible with non-adherent THP-1 cells and adherent mouse macrophage cells, including LPS-stimulated macrophages, and maintain their material properties after 48 h of immersion into simulated body fluid. The versatile nature of the films fabricated in this study may be exploited in next-generation consumer electronics and energy technologies.

Plant-derived cis-β-ocimene as a precursor for biocompatible, transparent, thermally-stable dielectric and encapsulating layers for organic electronics

PubMed Central

Bazaka, Kateryna; Destefani, Ryan; Jacob, Mohan V.

2016-01-01

This article presents low-temperature, one-step dry synthesis of optically transparent thermally-stable, biocompatible cis−β−ocimene-based thin films for applications as interlayer dielectric and encapsulating layer for flexible electronic devices, e.g. OLEDs. Morphological analysis of thin films shows uniform, very smooth (Rq < 1 nm) and defect-free moderately hydrophilic surfaces. The films are optically transparent, with a refractive index of ~1.58 at 600 nm, an optical band gap of ~2.85 eV, and dielectric constant of 3.5−3.6 at 1 kHz. Upon heating, thin films are chemically and optically stable up to at least 200 °C, where thermal stability increases for films manufactured at higher RF power as well as for films deposited away from the plasma glow. Heating of the sample increases the dielectric constant, from 3.7 (25 °C) to 4.7 (120 °C) at 1 kHz for polymer fabricated at 25 W. Polymers are biocompatible with non-adherent THP–1 cells and adherent mouse macrophage cells, including LPS-stimulated macrophages, and maintain their material properties after 48 h of immersion into simulated body fluid. The versatile nature of the films fabricated in this study may be exploited in next-generation consumer electronics and energy technologies. PMID:27934916

Plant-derived cis-β-ocimene as a precursor for biocompatible, transparent, thermally-stable dielectric and encapsulating layers for organic electronics

NASA Astrophysics Data System (ADS)

Bazaka, Kateryna; Destefani, Ryan; Jacob, Mohan V.

2016-12-01

This article presents low-temperature, one-step dry synthesis of optically transparent thermally-stable, biocompatible cis-β-ocimene-based thin films for applications as interlayer dielectric and encapsulating layer for flexible electronic devices, e.g. OLEDs. Morphological analysis of thin films shows uniform, very smooth (Rq < 1 nm) and defect-free moderately hydrophilic surfaces. The films are optically transparent, with a refractive index of ~1.58 at 600 nm, an optical band gap of ~2.85 eV, and dielectric constant of 3.5-3.6 at 1 kHz. Upon heating, thin films are chemically and optically stable up to at least 200 °C, where thermal stability increases for films manufactured at higher RF power as well as for films deposited away from the plasma glow. Heating of the sample increases the dielectric constant, from 3.7 (25 °C) to 4.7 (120 °C) at 1 kHz for polymer fabricated at 25 W. Polymers are biocompatible with non-adherent THP-1 cells and adherent mouse macrophage cells, including LPS-stimulated macrophages, and maintain their material properties after 48 h of immersion into simulated body fluid. The versatile nature of the films fabricated in this study may be exploited in next-generation consumer electronics and energy technologies.

Singlet Fission and Excimer Formation in Disordered Solids of Alkyl-Substituted 1,3-Diphenylisobenzofurans.

PubMed

Dron, Paul I; Michl, Josef; Johnson, Justin C

2017-11-16

We describe the preparation and excited state dynamics of three alkyl derivatives of 1,3-diphenylisobenzofuran (1) in both solutions and thin films. The substitutions are intended to disrupt the slip-stacked packing observed in crystals of 1 while maintaining the favorable energies of singlet and triplet for singlet fission (SF). All substitutions result in films that are largely amorphous as judged by the absence of strong X-ray diffraction peaks. The films of 1 carrying a methyl in the para position of one phenyl ring undergo SF relatively efficiently (≥75% triplet yield, Φ T ) but more slowly than thin films of 1. When the methyl is replaced with a t-butyl, kinetic competition in the excited state favors excimer formation rather than SF (Φ T = 55%). When t-Bu groups are placed in both meta positions of the phenyl substituent, SF is slowed further and Φ T = 35%.

Polydiacetylene as an all-optical picosecond Switch

NASA Technical Reports Server (NTRS)

Abdeldayem, Hossin A.; Frazier, D. O.; Paley, M. S.; Whitaker, Ann F. (Technical Monitor)

2001-01-01

Polydiacetylene derivative of 2-methyl-4-nitroaniline (PDAMNA) shows a picosecond switching property, which illustrated a partial all-optical picosecond NAND logic gate. The switching phenomenon was demonstrated by waveguiding two collinear beams at 633 nm and 532 nm through a hollow fiber of 50 micrometers diameter, coated from inside with a thin film of PDAMNA. A Z-scan investigations of a PDAMNA thin film on quartz substrate revealed that the switching effect was attributed to an excited state absorption in the systems. The studies also showed that the polymer suffers a photo-oxidation beyond an intensity level of 2.9 x 10(exp 6) w/square cm. The photo-oxidized film has different physical properties that are different from the original film before oxidation. The life time of both excited states before and after oxidation as well as their absorption coefficients were estimated by fitting a three level system model to the experimental results.

Berkovich Nanoindentation on AlN Thin Films

PubMed Central

2010-01-01

Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm−3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices. PMID:20672096

Synthesis of Ag-Cu-Pd alloy thin films by DC-magnetron sputtering: Case study on microstructures and optical properties

NASA Astrophysics Data System (ADS)

Rezaee, Sahar; Ghobadi, Nader

2018-06-01

The present study aims to investigate optical properties of Ag-Cu-Pd alloy thin films synthesized by DC-magnetron sputtering method. The thin films are deposited on the glass and silicon substrates using Argon gas and Ag-Cu-Pd target. XRD analysis confirms the successful growth of Ag, Cu, and Pd NPs with FCC crystalline structure. Moreover, UV-visible absorption spectroscopy is applied to determine optical properties of the prepared samples which are affected by changes in surface morphology. The existence of single surface plasmon resonance (SPR) peak near 350 nm proves the formation of silver nanoparticles with a slight red shift through increasing deposition time. Ineffective thickness method (ITM) and Derivation of ineffective thickness method (DITM) are applied to extract optical band gap and transition type via absorption spectrum. SEM and AFM analyses show the distribution of near-spherical nanoparticles covering the surface of thin films. Furthermore, thickness variation affects the grain size. In addition, TEM image reveals the uniform size distribution of nanoparticles with an average particle size of about 15 nm. The findings show that increasing grain size and crystallite order along with the decrease of structural defect and disorders decrease optical band gap from 3.86 eV to 2.58 eV.

Two-scale homogenization to determine effective parameters of thin metallic-structured films

PubMed Central

Marigo, Jean-Jacques

2016-01-01

We present a homogenization method based on matched asymptotic expansion technique to derive effective transmission conditions of thin structured films. The method leads unambiguously to effective parameters of the interface which define jump conditions or boundary conditions at an equivalent zero thickness interface. The homogenized interface model is presented in the context of electromagnetic waves for metallic inclusions associated with Neumann or Dirichlet boundary conditions for transverse electric or transverse magnetic wave polarization. By comparison with full-wave simulations, the model is shown to be valid for thin interfaces up to thicknesses close to the wavelength. We also compare our effective conditions with the two-sided impedance conditions obtained in transmission line theory and to the so-called generalized sheet transition conditions. PMID:27616916

Multi-objective optimization of laser-scribed micro grooves on AZO conductive thin film using Data Envelopment Analysis

NASA Astrophysics Data System (ADS)

Kuo, Chung-Feng Jeffrey; Quang Vu, Huy; Gunawan, Dewantoro; Lan, Wei-Luen

2012-09-01

Laser scribing process has been considered as an effective approach for surface texturization on thin film solar cell. In this study, a systematic method for optimizing multi-objective process parameters of fiber laser system was proposed to achieve excellent quality characteristics, such as the minimum scribing line width, the flattest trough bottom, and the least processing edge surface bumps for increasing incident light absorption of thin film solar cell. First, the Taguchi method (TM) obtained useful statistical information through the orthogonal array with relatively fewer experiments. However, TM is only appropriate to optimize single-objective problems and has to rely on engineering judgment for solving multi-objective problems that can cause uncertainty to some degree. The back-propagation neural network (BPNN) and data envelopment analysis (DEA) were utilized to estimate the incomplete data and derive the optimal process parameters of laser scribing system. In addition, analysis of variance (ANOVA) method was also applied to identify the significant factors which have the greatest effects on the quality of scribing process; in other words, by putting more emphasis on these controllable and profound factors, the quality characteristics of the scribed thin film could be effectively enhanced. The experiments were carried out on ZnO:Al (AZO) transparent conductive thin film with a thickness of 500 nm and the results proved that the proposed approach yields better anticipated improvements than that of the TM which is only superior in improving one quality while sacrificing the other qualities. The results of confirmation experiments have showed the reliability of the proposed method.

Design and analysis of non-polarizing beam splitter in a glass cube

NASA Astrophysics Data System (ADS)

Shi, Jinhui; Wang, Zhengping; Huang, Zongjun; Li, Qingbo

2008-11-01

The reflectance and transmittance of thin films at oblique incident angles exhibit strong polarization effects, particularly for the films inside a glass cube. However, the polarization effects are undesirable in many applications. To solve this problem, non-polarizing beam splitters with unique optical thin films have been achieved employing a method of combination of interference and frustrated total internal reflection, the non-polarizing condition expressions based on frustrated total internal reflection has been derived, and the design examples of non-polarizing beam splitters with an optimization technique have been also presented. The results of Rp=(50+/-0.5)%, Rs=(50+/-0.5)% andΔr=(0+/-0.3) degree in the wavelength range of 400-700nm have been obtained. The thickness sensitivity of NPBSs is also analyzed.

Monolithic Carbide-Derived Carbon Films for Micro-Supercapacitors

NASA Astrophysics Data System (ADS)

Chmiola, John; Largeot, Celine; Taberna, Pierre-Louis; Simon, Patrice; Gogotsi, Yury

2010-04-01

Microbatteries with dimensions of tens to hundreds of micrometers that are produced by common microfabrication techniques are poised to provide integration of power sources onto electronic devices, but they still suffer from poor cycle lifetime, as well as power and temperature range of operation issues that are alleviated with the use of supercapacitors. There have been a few reports on thin-film and other micro-supercapacitors, but they are either too thin to provide sufficient energy or the technology is not scalable. By etching supercapacitor electrodes into conductive titanium carbide substrates, we demonstrate that monolithic carbon films lead to a volumetric capacity exceeding that of micro- and macroscale supercapacitors reported thus far, by a factor of 2. This study also provides the framework for integration of high-performance micro-supercapacitors onto a variety of devices.

Monolithic carbide-derived carbon films for micro-supercapacitors.

PubMed

Chmiola, John; Largeot, Celine; Taberna, Pierre-Louis; Simon, Patrice; Gogotsi, Yury

2010-04-23

Microbatteries with dimensions of tens to hundreds of micrometers that are produced by common microfabrication techniques are poised to provide integration of power sources onto electronic devices, but they still suffer from poor cycle lifetime, as well as power and temperature range of operation issues that are alleviated with the use of supercapacitors. There have been a few reports on thin-film and other micro-supercapacitors, but they are either too thin to provide sufficient energy or the technology is not scalable. By etching supercapacitor electrodes into conductive titanium carbide substrates, we demonstrate that monolithic carbon films lead to a volumetric capacity exceeding that of micro- and macroscale supercapacitors reported thus far, by a factor of 2. This study also provides the framework for integration of high-performance micro-supercapacitors onto a variety of devices.

High work function materials for source/drain contacts in printed polymer thin film transistors

NASA Astrophysics Data System (ADS)

Sholin, V.; Carter, S. A.; Street, R. A.; Arias, A. C.

2008-02-01

Studies of materials for source-drain electrodes in ink-jet printed polymer-based thin film transistors (TFTs) are reported. Two systems are studied: a blend of Ag nanoparticles with poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) and an ethylene glycol-doped PEDOT:PSS solution (modified-PEDOT). The semiconductor used is the polythiophene derivative poly [5,5'-bis(3-dodecyl-2-thienyl)-2,2,2'-bithiophene]. PEDOT:Ag blends and modified-PEDOT yield TFTs with mobilities around 10-2 and 10-3cm2/Vs, respectively, subthreshold slopes around 1.6V/decade and on-to-off current ratios of 106-107. Both systems show considerable improvement over printed TFTs with Ag nanoparticle source-drain electrodes. Results on film resistivity and morphology are discussed along with device characteristic analysis.

Compositional dependence of optical and electrical properties of indium doped zinc oxide (IZO) thin films deposited by chemical spray pyrolysis

NASA Astrophysics Data System (ADS)

Dintle, Lawrence K.; Luhanga, Pearson V. C.; Moditswe, Charles; Muiva, Cosmas M.

2018-05-01

The structural and optoelectronic properties of undoped and indium doped zinc oxide (IZO) thin films grown on glass substrates through a simple reproducible custom-made pneumatic chemical spray pyrolysis technique are presented. X-ray diffraction (XRD) results showed a polycrystalline structure of hexagonal wurtzite phase growing preferentially along the (002) plane for the undoped sample. Increase in dopant content modified the orientation leading to more pronounced (100) and (101) reflections. Optical transmission spectra showed high transmittance of 80-90% in the visible range for all thin films. The optical band gap energy (Eg) was evaluated on the basis of the derivative of transmittance (dT/dλ) versus wavelength (λ) model and Tauc's extrapolation method in the region where the absorption coefficient, α ≥ 104 cm-1. The observed values of Eg were found to decrease generally with increasing In dopant concentration. From the figure of merit calculations a sample with 4 at.% In dopant concentration showed better optoelectronic properties.

The Constitutive Modeling of Thin Films with Randon Material Wrinkles

NASA Technical Reports Server (NTRS)

Murphey, Thomas W.; Mikulas, Martin M.

2001-01-01

Material wrinkles drastically alter the structural constitutive properties of thin films. Normally linear elastic materials, when wrinkled, become highly nonlinear and initially inelastic. Stiffness' reduced by 99% and negative Poisson's ratios are typically observed. This paper presents an effective continuum constitutive model for the elastic effects of material wrinkles in thin films. The model considers general two-dimensional stress and strain states (simultaneous bi-axial and shear stress/strain) and neglects out of plane bending. The constitutive model is derived from a traditional mechanics analysis of an idealized physical model of random material wrinkles. Model parameters are the directly measurable wrinkle characteristics of amplitude and wavelength. For these reasons, the equations are mechanistic and deterministic. The model is compared with bi-axial tensile test data for wrinkled Kaptong(Registered Trademark) HN and is shown to deterministically predict strain as a function of stress with an average RMS error of 22%. On average, fitting the model to test data yields an RMS error of 1.2%

Functionalized copper(II)-phthalocyanine in solution and as thin film: photochemical and morphological characterization toward applications.

PubMed

Ingrosso, Chiara; Curri, M Lucia; Fini, Paola; Giancane, Gabriele; Agostiano, Angela; Valli, Ludovico

2009-09-01

This article reports on an extensive investigation on a functionalized phthalocyanine, namely, copper(II) tetrakis-(isopropoxy-carbonyl)-phthalocyanine (TIPCuPc). The self-association of the molecules is extensively described in solution in different solvents (DMSO, DMF, CHCl(3), pyridine) by means of UV-vis steady state spectroscopy at the air/water interface by Brewster angle microscopy (BAM) and in thin films by using atomic force microscopy (AFM). We investigated the morphology of TIPCuPc as thin film by evaluating different factors: temperature, solvent, concentration, transferring procedure (spin-coating and Langmuir-Schafer technique), and nature of the substrate (mica and quartz). The behavior of the molecules under UV light irradiation and their thermal stability were studied as well. Such a detailed study can allow a suitable processing of this phthalocyanine derivative for future applications. Here the photoelectrochemical activity of the phthalocyanine was investigated when suitably combined as sensitizer with rodlike TiO(2) nanocrystals (NCs) in hybrid junctions integrated in a photoelectrochemical cell.

Super-resolved thickness maps of thin film phantoms and in vivo visualization of tear film lipid layer using OCT

PubMed Central

dos Santos, Valentin Aranha; Schmetterer, Leopold; Triggs, Graham J.; Leitgeb, Rainer A.; Gröschl, Martin; Messner, Alina; Schmidl, Doreen; Garhofer, Gerhard; Aschinger, Gerold; Werkmeister, René M.

2016-01-01

In optical coherence tomography (OCT), the axial resolution is directly linked to the coherence length of the employed light source. It is currently unclear if OCT allows measuring thicknesses below its axial resolution value. To investigate spectral-domain OCT imaging in the super-resolution regime, we derived a signal model and compared it with the experiment. Several island thin film samples of known refractive indices and thicknesses in the range 46 – 163 nm were fabricated and imaged. Reference thickness measurements were performed using a commercial atomic force microscope. In vivo measurements of the tear film were performed in 4 healthy subjects. Our results show that quantitative super-resolved thickness measurement can be performed using OCT. In addition, we report repeatable tear film lipid layer visualization. Our results provide a novel interpretation of the OCT axial resolution limit and open a perspective to deeper extraction of the information hidden in the coherence volume. PMID:27446696

Optimization of high quality Cu2ZnSnS4 thin film by low cost and environment friendly sol-gel technique for thin film solar cells applications

NASA Astrophysics Data System (ADS)

Chaudhari, J. J.; Joshi, U. S.

2018-05-01

In this study kesterite Cu2ZnSnS4 (CZTS) thin films suitable for absorber layer in thin film solar cells (TFSCs) were successfully fabricated on glass substrate by sol-gel method. The effects of complexing agent on formation of CZTS thin films have been investigated. X-ray diffraction (XRD) analysis confirms formation of polycrystalline CZTS thin films with single phase kesterite structure. XRD and Raman spectroscopy analysis of CZTS thin films with optimized concentration of complexing agent confirmed formation of kesterite phase in CZTS thin films. The direct optical band gap energy of CZTS thin films is found to decrease from 1.82 to 1.50 eV with increase of concentration of complexing agent triethanolamine. Morphological analysis of CZTS thin films shows smooth, uniform and densely packed CZTS grains and increase in the grain size with increase of concentration of complexing agent. Hall measurements revealed that concentration of charge carrier increases and resistivity decreases in CZTS thin films as amount of complexing agent increases.

EUV polarimetry for thin film and surface characterization and EUV phase retarder reflector development.

PubMed

Gaballah, A E H; Nicolosi, P; Ahmed, Nadeem; Jimenez, K; Pettinari, G; Gerardino, A; Zuppella, P

2018-01-01

The knowledge and the manipulation of light polarization state in the vacuum ultraviolet and extreme ultraviolet (EUV) spectral regions play a crucial role from materials science analysis to optical component improvements. In this paper, we present an EUV spectroscopic ellipsometer facility for polarimetry in the 90-160 nm spectral range. A single layer aluminum mirror to be used as a quarter wave retarder has been fully characterized by deriving the optical and structural properties from the amplitude component and phase difference δ measurements. The system can be suitable to investigate the properties of thin films and optical coatings and optics in the EUV region.

Analysis of the boundary conditions for a Hele--Shaw bubble

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burgess, D.; Foster, M.R.

1990-07-01

Effective boundary conditions are derived to be used with the classical Hele--Shaw equations in calculating the shape and motion of a Hele--Shaw bubble. The main assumptions of this analysis are that the displaced fluid wets the plates, and that the capillary number Ca and the ratio of gap width to characteristic bubble length {epsilon} are both small. In a small region at the sides of the bubble, it is found that the thin-film thickness scales with {epsilon}{sup 2/5} Ca{sup 4/5}, rather than the Ca{sup 2/3} scaling that is valid over most of the thin film above and below the bubble.

Thin film cell development workshop report

NASA Technical Reports Server (NTRS)

Woodyard, James R.

1991-01-01

The Thin Film Development Workshop provided an opportunity for those interested in space applications of thin film cells to debate several topics. The unique characteristics of thin film cells as well as a number of other issues were covered during the discussions. The potential of thin film cells, key research and development issues, manufacturing issues, radiation damage, substrates, and space qualification of thin film cells were discussed.

Composite polymeric film and method for its use in installing a very-thin polymeric film in a device

DOEpatents

Duchane, D.V.; Barthell, B.L.

1982-04-26

A composite polymeric film and a method for its use in forming and installing a very thin (< 10 ..mu..m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectiely dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to e successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Composite polymeric film and method for its use in installing a very thin polymeric film in a device

DOEpatents

Duchane, David V.; Barthell, Barry L.

1984-01-01

A composite polymeric film and a method for its use in forming and installing a very thin (<10 .mu.m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectively dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to be successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shu, Deming; Shvydko, Yury; Stoupin, Stanislav

A method and mechanical design for a thin-film diamond crystal mounting apparatus for coherence preservation x-ray optics with optimized thermal contact and minimized crystal strain are provided. The novel thin-film diamond crystal mounting apparatus mounts a thin-film diamond crystal supported by a thick chemical vapor deposition (CVD) diamond film spacer with a thickness slightly thicker than the thin-film diamond crystal, and two groups of thin film thermal conductors, such as thin CVD diamond film thermal conductor groups separated by the thick CVD diamond spacer. The two groups of thin CVD film thermal conductors provide thermal conducting interface media with themore » thin-film diamond crystal. A piezoelectric actuator is integrated into a flexural clamping mechanism generating clamping force from zero to an optimal level.« less

Deposition temperature dependent optical and electrical properties of ALD HfO{sub 2} gate dielectrics pretreated with tetrakisethylmethylamino hafnium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, J.; School of Sciences, Anhui University of Science and Technology, Huainan 232001; He, G., E-mail: hegang@ahu.edu.cn

2015-10-15

Highlights: • ALD-derived HfO{sub 2} gate dielectrics have been deposited on Si substrates. • The leakage current mechanism for different deposition temperature was discussed. • Different emission at different field region has been determined precisely. - Abstract: The effect of deposition temperature on the growth rate, band gap energy and electrical properties of HfO{sub 2} thin film deposited by atomic layer deposition (ALD) has been investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the growth rate and optical constant of ALD-derived HfO{sub 2} gate dielectrics are determined precisely. The deposition temperature dependent electrical properties of HfO{sub 2}more » films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. The leakage current mechanism for different deposition temperature has been discussed systematically. As a result, the optimized deposition temperature has been obtained to achieve HfO{sub 2} thin film with high quality.« less

Higuchi equation: derivation, applications, use and misuse.

PubMed

Siepmann, Juergen; Peppas, Nicholas A

2011-10-10

Fifty years ago, the legendary Professor Takeru Higuchi published the derivation of an equation that allowed for the quantification of drug release from thin ointment films, containing finely dispersed drug into a perfect sink. This became the famous Higuchi equation whose fiftieth anniversary we celebrate this year. Despite the complexity of the involved mass transport processes, Higuchi derived a very simple equation, which is easy to use. Based on a pseudo-steady-state approach, a direct proportionality between the cumulative amount of drug released and the square root of time can be demonstrated. In contrast to various other "square root of time" release kinetics, the constant of proportionality in the classical Higuchi equation has a specific, physically realistic meaning. The major benefits of this equation include the possibility to: (i) facilitate device optimization, and (ii) to better understand the underlying drug release mechanisms. The equation can also be applied to other types of drug delivery systems than thin ointment films, e.g., controlled release transdermal patches or films for oral controlled drug delivery. Later, the equation was extended to other geometries and related theories have been proposed. The aim of this review is to highlight the assumptions the derivation of the classical Higuchi equation is based on and to give an overview on the use and potential misuse of this equation as well as of related theories. Copyright © 2011 Elsevier B.V. All rights reserved.

On the photoresponse of several novel functionalized oligoacene and anthradithiophene derivatives

NASA Astrophysics Data System (ADS)

Day, Jonathan

The results of an investigation into carrier dynamics in several novel functionalized and solution-processable pentacene and anthradithiophene derivatives are reported. Measurements were made of real-time photoresponse of polycrystalline thin films of these materials to ultrafast laser pulses, on picosecond to microsecond time-scales, as well as measurements of dark current and current under steady illumination. This data was taken over varied field-strength, light intensity and temperature. The results support a model for carrier generation and transport with the following features. Carrier photo-generation is assisted weakly, if it is assisted at all, thermally or by applied fields. Carriers are initially (picosecond to nanosecond time-scales) in extended states and transport is "bandlike." Carriers then relax into more localized states, transported via thermally assisted hopping (nanosecond to second time-scales). This model was supported by further experiments with the electric behavior of films prepared from a pure anthradithophene derivative, doped with either the buckminsterfullerene C60 or with other molecular dopants. These results also show that samples with traps of known density and depth can be prepared, as a means of manipulating transport dynamics. The electronic and photo-electronic behaviors of films with self-anodized aluminum and of films with gold electrodes were compared, and a model of the particular energy profile and dynamics which exist at the different interfaces between the films and the different contacts was developed. This model views the metal-organic-metal system as an anode-to-anode Schottky strucure, whose I-V relation is shaped both by the nature of the interface dynamics for different metal contacts, and by the different distributions of space-charge in the thin film between different electrodes.

Realistic absorption coefficient of ultrathin films

NASA Astrophysics Data System (ADS)

Cesaria, M.; Caricato, A. P.; Martino, M.

2012-10-01

Both a theoretical algorithm and an experimental procedure are discussed of a new route to determine the absorption/scattering properties of thin films deposited on transparent substrates. Notably, the non-measurable contribution of the film-substrate interface is inherently accounted for. While the experimental procedure exploits only measurable spectra combined according to a very simple algorithm, the theoretical derivation does not require numerical handling of the acquired spectra or any assumption on the film homogeneity and substrate thickness. The film absorption response is estimated by subtracting the measured absorption spectrum of the bare substrate from that of the film on the substrate structure but in a non-straightforward way. In fact, an assumption about the absorption profile of the overall structure is introduced and a corrective factor accounting for the relative film-to-substrate thickness. The method is tested on films of a well known material (ITO) as a function of the film structural quality and influence of the film-substrate interface, both deliberately changed by thickness tuning and doping. Results are found fully consistent with information obtained by standard optical analysis and band gap values reported in the literature. Additionally, comparison with a conventional method demonstrates that our route is generally more accurate even if particularly suited for very thin films.

A drain current model for amorphous InGaZnO thin film transistors considering temperature effects

NASA Astrophysics Data System (ADS)

Cai, M. X.; Yao, R. H.

2018-03-01

Temperature dependent electrical characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are investigated considering the percolation and multiple trapping and release (MTR) conduction mechanisms. Carrier-density and temperature dependent carrier mobility in a-IGZO is derived with the Boltzmann transport equation, which is affected by potential barriers above the conduction band edge with Gaussian-like distributions. The free and trapped charge densities in the channel are calculated with Fermi-Dirac statistics, and the field effective mobility of a-IGZO TFTs is then deduced based on the MTR theory. Temperature dependent drain current model for a-IGZO TFTs is finally derived with the obtained low field mobility and free charge density, which is applicable to both non-degenerate and degenerate conductions. This physical-based model is verified by available experiment results at various temperatures.

Soluble fullerene derivatives: The effect of electronic structure on transistor performance and air stability

NASA Astrophysics Data System (ADS)

Ball, James M.; Bouwer, Ricardo K. M.; Kooistra, Floris B.; Frost, Jarvist M.; Qi, Yabing; Domingo, Ester Buchaca; Smith, Jeremy; de Leeuw, Dago M.; Hummelen, Jan C.; Nelson, Jenny; Kahn, Antoine; Stingelin, Natalie; Bradley, Donal D. C.; Anthopoulos, Thomas D.

2011-07-01

The family of soluble fullerene derivatives comprises a widely studied group of electron transporting molecules for use in organic electronic and optoelectronic devices. For electronic applications, electron transporting (n-channel) materials are required for implementation into organic complementary logic circuit architectures. To date, few soluble candidate materials have been studied that fulfill the stringent requirements of high carrier mobility and air stability. Here we present a study of three soluble fullerenes with varying electron affinity to assess the impact of electronic structure on device performance and air stability. Through theoretical and experimental analysis of the electronic structure, characterization of thin-film structure, and characterization of transistor device properties we find that the air stability of the present series of fullerenes not only depends on the absolute electron affinity of the semiconductor but also on the disorder within the thin-film.

Permanent laser conditioning of thin film optical materials

DOEpatents

Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

1995-01-01

The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

Kinetic model for thin film stress including the effect of grain growth

NASA Astrophysics Data System (ADS)

Chason, Eric; Engwall, A. M.; Rao, Z.; Nishimura, T.

2018-05-01

Residual stress during thin film deposition is affected by the evolution of the microstructure. This can occur because subsurface grain growth directly induces stress in the film and because changing the grain size at the surface affects the stress in new layers as they are deposited. We describe a new model for stress evolution that includes both of these effects. It is used to explain stress in films that grow with extensive grain growth (referred to as zone II) so that the grain size changes throughout the thickness of the layer as the film grows. Equations are derived for different cases of high or low atomic mobility where different assumptions are used to describe the diffusion of atoms that are incorporated into the grain boundary. The model is applied to measurements of stress and grain growth in evaporated Ni films. A single set of model parameters is able to explain stress evolution in films grown at multiple temperatures and growth rates. The model explains why the slope of the curvature measurements changes continuously with thickness and attributes it to the effect of grain size on new layers deposited on the film.

Relation of planar Hall and planar Nernst effects in thin film permalloy

NASA Astrophysics Data System (ADS)

Wesenberg, D.; Hojem, A.; Bennet, R. K.; Zink, B. L.

2018-06-01

We present measurements of the planar Nernst effect (PNE) and the planar Hall effect (PHE) of nickel-iron (Ni–Fe) alloy thin films. We suspend the thin-film samples, measurement leads, and lithographically-defined heaters and thermometers on silicon-nitride membranes to greatly simplify control and measurement of thermal gradients essential to quantitative determination of magnetothermoelectric effects. Since these thermal isolation structures allow measurements of longitudinal thermopower, or the Seebeck coefficient, and four-wire electrical resistivity of the same thin film, we can quantitatively demonstrate the link between the longitudinal and transverse effects as a function of applied in-plane field and angle. Finite element thermal analysis of this essentially 2D structure allows more confident determination of the thermal gradient, which is reduced from the simplest assumptions due to the particular geometry of the membranes, which are more than 350 μm wide in order to maximize sensitivity to transverse thermoelectric effects. The resulting maximum values of the PNE and PHE coefficients for the Ni–Fe film with 80% Ni we study here are and , respectively. All signals are exclusively symmetry with applied field, ruling out long-distance spin transport effects. We also consider a Mott-like relation between the PNE and PHE, and use both this and the standard Mott relation to determine the energy-derivative of the resistivity at the Fermi energy to be , which is very similar to values for films we previously measured using similar thermal platforms. Finally, using an estimated value for the lead contribution to the longitudinal thermopower, we show that the anisotropic magnetoresistance (AMR) ratio in this Ni–Fe film is two times larger than the magnetothermopower ratio, which is the first evidence of a deviation from strict adherence to the Mott relation between Seebeck coefficient and resistivity.

Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

Science.gov Websites

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the National Laboratory developed low-cost transparent encapsulation schemes for CIGS cells that reduced power

Permanent laser conditioning of thin film optical materials

DOEpatents

Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

1995-12-05

The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R.; Lunt, Richard R.

2016-04-05

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R; Lunt, Richard R

2015-01-13

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Low work function, stable thin films

DOEpatents

Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

2000-01-01

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Understanding polymorphism in organic semiconductor thin films through nanoconfinement.

PubMed

Diao, Ying; Lenn, Kristina M; Lee, Wen-Ya; Blood-Forsythe, Martin A; Xu, Jie; Mao, Yisha; Kim, Yeongin; Reinspach, Julia A; Park, Steve; Aspuru-Guzik, Alán; Xue, Gi; Clancy, Paulette; Bao, Zhenan; Mannsfeld, Stefan C B

2014-12-10

Understanding crystal polymorphism is a long-standing challenge relevant to many fields, such as pharmaceuticals, organic semiconductors, pigments, food, and explosives. Controlling polymorphism of organic semiconductors (OSCs) in thin films is particularly important given that such films form the active layer in most organic electronics devices and that dramatic changes in the electronic properties can be induced even by small changes in the molecular packing. However, there are very few polymorphic OSCs for which the structure-property relationships have been elucidated so far. The major challenges lie in the transient nature of metastable forms and the preparation of phase-pure, highly crystalline thin films for resolving the crystal structures and evaluating the charge transport properties. Here we demonstrate that the nanoconfinement effect combined with the flow-enhanced crystal engineering technique is a powerful and likely material-agnostic method to identify existing polymorphs in OSC materials and to prepare the individual pure forms in thin films at ambient conditions. With this method we prepared high quality crystal polymorphs and resolved crystal structures of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), including a new polymorph discovered via in situ grazing incidence X-ray diffraction and confirmed by molecular mechanic simulations. We further correlated molecular packing with charge transport properties using quantum chemical calculations and charge carrier mobility measurements. In addition, we applied our methodology to a [1]benzothieno[3,2-b][1]1benzothiophene (BTBT) derivative and successfully stabilized its metastable form.

Thin Film Evaporation Model with Retarded Van Der Waals Interaction (Postprint)

DTIC Science & Technology

2013-11-01

Waals interaction. The retarded van der Waals interaction is derived from Hamaker theory, the summation of retarded pair potentials for all molecules...interaction is derived from Hamaker theory, the summation of retarded pair potentials for all molecules for a given geometry. When combined, the governing...interaction force is the negative derivative with respect to distance of the interaction energy. The method due to Hamaker essentially sums all pair

μ-Rainbow: CdSe Nanocrystal Photoluminescence Gradients via Laser Spike Annealing for Kinetic Investigations and Tunable Device Design.

PubMed

Treml, Benjamin E; Jacobs, Alan G; Bell, Robert T; Thompson, Michael O; Hanrath, Tobias

2016-02-10

Much of the promise of nanomaterials derives from their size-dependent, and hence tunable, properties. Impressive advances have been made in the synthesis of nanoscale building blocks with precisely tailored size, shape and composition. Significant attention is now turning toward creating thin film structures in which size-dependent properties can be spatially programmed with high fidelity. Nonequilibrium processing techniques present exciting opportunities to create nanostructured thin films with unprecedented spatial control over their optical and electronic properties. Here, we demonstrate single scan laser spike annealing (ssLSA) on CdSe nanocrystal (NC) thin films as an experimental test bed to illustrate how the size-dependent photoluminescence (PL) emission can be tuned throughout the visible range and in spatially defined profiles during a single annealing step. Through control of the annealing temperature and time, we discovered that NC fusion is a kinetically limited process with a constant activation energy in over 2 orders of magnitude of NC growth rate. To underscore the broader technological implications of this work, we demonstrate the scalability of LSA to process large area NC films with periodically modulated PL emission, resulting in tunable emission properties of a large area film. New insights into the processing-structure-property relationships presented here offer significant advances in our fundamental understanding of kinetics of nanomaterials as well as technological implications for the production of nanomaterial films.

Controlling microstructure of pentacene derivatives by solution processing: impact of structural anisotropy on optoelectronic properties.

PubMed

James, David T; Frost, Jarvist M; Wade, Jessica; Nelson, Jenny; Kim, Ji-Seon

2013-09-24

The consideration of anisotropic structural properties and their impact on optoelectronic properties in small-molecule thin films is vital to understand the performance of devices incorporating crystalline organic semiconductors. Here we report on the important relationship between structural and optoelectronic anisotropy in aligned, functionalized-pentacene thin films fabricated using the solution-based zone-casting technique. The microstructure of thin films composed of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and 6,13-bis(triethylsilylethynyl)pentacene (TES-pentacene) is systematically controlled by varying the casting speed. By controlling the structural alignment, we were able to experimentally decouple, for the first time in these films, an intramolecular absorption transition dipole (at ∼440 nm) oriented close to the pentacene short axis and an intermolecular absorption transition dipole (at ∼695 nm) oriented predominantly along the conjugated pentacene-pentacene core stacking axis (crystallographic a-axis) in both films. Using the intermolecular absorption as a signature for intermolecular delocalization, much higher optical dichroism was obtained in TES-pentacene (16 ± 6) than TIPS-pentacene (3.2 ± 0.1), which was attributed to the 1D packing structure of TES-pentacene compared to the 2D packing structure of TIPS-pentacene. This result was also supported by field-effect mobility anisotropy measurements of the films, with TES-pentacene exhibiting a higher anisotropy (∼21-47, depending on the casting speed) than TIPS-pentacene (∼3-10).

Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Hishitani, Daisuke; Horita, Masahiro; Ishikawa, Yasuaki; Ikenoue, Hiroshi; Uraoka, Yukiharu

2017-05-01

The formation of perhydropolysilazane (PHPS)-based SiO2 films by CO2 laser annealing is proposed. Irradiation with a CO2 laser with optimum fluence transformed a prebaked PHPS film into a SiO2 film with uniform composition in the thickness direction. Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a SiO2 film as the gate insulator were fabricated. When the SiO2 film was formed by CO2 laser annealing (CO2LA) at the optimum fluence of 20 mJ/cm2, the film had fewer OH groups which was one-twentieth that of the furnace annealed PHPS film and one-hundredth that of the SiO2 film deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethyl orthosilicate (TEOS). The resulting TFTs using PHPS showed a clear transistor operation with a field-effect mobility of 37.9 ± 1.2 cm2 V-1 s-1, a threshold voltage of 9.8 ± 0.2 V, and a subthreshold swing of 0.76 ± 0.02 V/decade. The characteristics of such TFTs were as good as those of a poly-Si TFT with a SiO2 gate insulator prepared by PECVD using TEOS.

Growth and characterization of zinc oxide and PZT films for micromachined acoustic wave devices

NASA Astrophysics Data System (ADS)

Yoon, Sang Hoon

The ability to detect the presence of low concentrations of harmful substances, such as biomolecular agents, warfare agents, and pathogen cells, in our environment and food chain would greatly advance our safety, provide more sensitive tools for medical diagnostics, and protect against terrorism. Acoustic wave (AW) devices have been widely studied for such applications due to several attractive properties, such as rapid response, reliability, portability, ease of use, and low cost. The principle of these sensors is based on a fundamental feature of the acoustic wave that is generated and detected by a piezoelectric material. The performance of the device, therefore, greatly depends on the properties of piezoelectric thin film. The required properties include a high piezoelectric coefficient and high electromechanical coefficients. The surface roughness and the mechanical properties, such as Young's modulus and hardness, are also factors that can affect the wave propagation of the device. Since the film properties are influenced by the structure of the material, understanding thin film structure is very important for the design of high-performance piezoelectric MEMS devices for biosensor applications. In this research, two piezoelectric thin film materials were fabricated and investigated. ZnO films were fabricated by CSD (Chemical Solution Deposition) and sputtering, and PZT films were fabricated by CSD only. The process parameters for solution derived ZnO and PZT films, such as the substrate type, the effect of the chelating agent, and heat treatment, were studied to find the relationship between process parameters and thin film structure. In the case of the sputtered ZnO films, the process gas types and their ratio, heat treatment in situ, and post deposition were investigated. The key results of systematic experiments show that the combined influence of chemical modifiers and substrates in chemical solution deposition have an effect on the crystallographic orientation of the films, which is explained by the phase transformation that occurs from amorphous pyrolized film to crystalline film. Sputtered ZnO films do not show a strong dependence on the parameters, possibly indicating a reduced energy barrier for the growth of ZnO film due to plasma energy. Based on an understanding of the relationship between process and thin film structure, the growth mechanism of CSD ZnO is proposed. The devices are fabricated on 4-inch silicon wafers by a microelectronic fabrication method. The fabrication procedure and issues relating to device fabrication are discussed.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2001-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Thin film lubrication of hexadecane confined by iron and iron oxide surfaces: A crucial role of surface structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ta, D. T.; Tieu, A. K.; Zhu, H. T., E-mail: hongtao@uow.edu.au

2015-10-28

A comparative analysis of thin film lubrication of hexadecane between different iron and its oxide surfaces has been carried out using classical molecular dynamic simulation. An ab initio force-field, COMPASS, was applied for n-hexadecane using explicit atom model. An effective potential derived from density functional theory calculation was utilized for the interfacial interaction between hexadecane and the tribo-surfaces. A quantitative surface parameterization was introduced to investigate the influence of surface properties on the structure, rheological properties, and tribological performance of the lubricant. The results show that although the wall-fluid attraction of hexadecane on pure iron surfaces is significantly stronger thanmore » its oxides, there is a considerable reduction of shear stress of confined n-hexadecane film between Fe(100) and Fe(110) surfaces compared with FeO(110), FeO(111), Fe{sub 2}O{sub 3}(001), and Fe{sub 2}O{sub 3}(012). It was found that, in thin film lubrication of hexadecane between smooth iron and iron oxide surfaces, the surface corrugation plays a role more important than the wall-fluid adhesion strength.« less

Thermoelastic enhancement of the magnonic spin Seebeck effect in thin films and bulk samples

NASA Astrophysics Data System (ADS)

Chotorlishvili, L.; Wang, X.-G.; Toklikishvili, Z.; Berakdar, J.

2018-04-01

A nonuniform temperature profile may generate a pure spin current in magnetic films, as observed, for instance, in the spin Seebeck effect. In addition, thermally induced elastic deformations may set in that could affect the spin current. A self-consistent theory of the magnonic spin Seebeck effect including thermally activated magnetoelastic effects is presented, and analytical expressions for the thermally activated deformation tensor and dispersion relations for coupled magnetoelastic modes are obtained. We derive analytical results for bulk (three-dimensional) systems and thin magnetic (two-dimensional) films. We observe that the displacement vector and the deformation tensor in bulk systems decay asymptotically as u ˜1 /R2 and ɛ ˜1 /R3 , respectively, while the decays in thin magnetic films proceed slower, following u ˜1 /R and ɛ ˜1 /R2 . The dispersion relations evidence a strong anisotropy in the magnetic excitations. We observe that a thermoelastic steady-state deformation may lead to both an enchantment and a reduction of the gap in the magnonic spectrum. The reduction of the gap increases the number of magnons contributing to the spin Seebeck effect and offers new possibilities for the thermoelastic control of the spin Seebeck effect.

Miniature hybrid microwave IC's using a novel thin-film technology

NASA Astrophysics Data System (ADS)

Eda, Kazuo; Miwa, Tetsuji; Taguchi, Yutaka; Uwano, Tomoki

1990-12-01

A novel thin-film technology for miniature hybrid microwave ICs is presented. All passive components, such as resistors and capacitors, are fully integrated on ordinary alumina ceramic substrates using the thin-film technology with very high yield. The numbers of parts and wiring processes were significantly reduced. This technology was applied to the fabrication of Ku-band solid-state power amplifiers. This thin-film technology offers the following advantages: (1) a very high yield fabrication process of thin-film capacitor having excellent electrical characteristics in the gigahertz range (Q = 230 at 12 GHz) and reliability: (2) two kinds of thin-film resistors having different temperature coefficients of resistivity and a lift-off process to integrate them with thin-film capacitors; and (3) a matching method using the thin-film capacitor.

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

2012-02-01

The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

Chemical microsensors

DOEpatents

Li, DeQuan; Swanson, Basil I.

1995-01-01

An article of manufacture is provided including a substrate having an oxide surface layer and a selective thin film of a cyclodextrin derivative chemically bound upon said substrate, said film is adapted for the inclusion of a selected organic compound therewith. Such an article can be either a chemical sensor capable of detecting a resultant mass change from inclusion of the selected organic compound or a chemical separator capable of reversibly selectively separating a selected organic compound.

Development of nanostructured ZnO thin film via electrohydrodynamic atomization technique and its photoconductivity characteristics.

PubMed

Duraisamy, Navaneethan; Kwon, Ki Rin; Jo, Jeongdai; Choi, Kyung-Hyun

2014-08-01

This article presents the non-vacuum technique for the preparation of nanostructured zinc oxide (ZnO) thin film on glass substrate through electrohydrodynamic atomization (EHDA) technique. The detailed process parameters for achieving homogeneous ZnO thin films are clearly discussed. The crystallinity and surface morphology of ZnO thin film are investigated by X-ray diffraction and field emission scanning electron microscopy. The result shows that the deposited ZnO thin film is oriented in the wurtzite phase with void free surface morphology. The surface roughness of deposited ZnO thin film is found to be ~17.8 nm. The optical properties of nanostructured ZnO thin films show the average transmittance is about 90% in the visible region and the energy band gap is found to be 3.17 eV. The surface chemistry and purity of deposited ZnO thin films are analyzed by fourier transform infrared and X-ray photoelectron spectroscopy, conforming the presence of Zn-O in the deposited thin films without any organic moiety. The photocurrent measurement of nanostructured ZnO thin film is examined in the presence of UV light illumination with wavelength of 365 nm. These results suggest that the deposited nanostructured ZnO thin film through EHDA technique possess promising applications in the near future.

Chemical bath deposited and dip coating deposited CuS thin films - Structure, Raman spectroscopy and surface study

NASA Astrophysics Data System (ADS)

Tailor, Jiten P.; Khimani, Ankurkumar J.; Chaki, Sunil H.

2018-05-01

The crystal structure, Raman spectroscopy and surface microtopography study on as-deposited CuS thin films were carried out. Thin films deposited by two techniques of solution growth were studied. The thin films used in the present study were deposited by chemical bath deposition (CBD) and dip coating deposition techniques. The X-ray diffraction (XRD) analysis of both the as-deposited thin films showed that both the films possess covellite phase of CuS and hexagonal unit cell structure. The determined lattice parameters of both the films are in agreement with the standard JCPDS as well as reported data. The crystallite size determined by Scherrer's equation and Hall-Williamsons relation using XRD data for both the as-deposited thin films showed that the respective values were in agreement with each other. The ambient Raman spectroscopy of both the as-deposited thin films showed major emission peaks at 474 cm-1 and a minor emmision peaks at 265 cm-1. The observed Raman peaks matched with the covellite phase of CuS. The atomic force microscopy of both the as-deposited thin films surfaces showed dip coating thin film to be less rough compared to CBD deposited thin film. All the obtained results are presented and deliberated in details.

Growth behavior of anodic oxide formed by aluminum anodizing in glutaric and its derivative acid electrolytes

NASA Astrophysics Data System (ADS)

Nakajima, Daiki; Kikuchi, Tatsuya; Natsui, Shungo; Suzuki, Ryosuke O.

2014-12-01

The growth behavior of anodic oxide films formed via anodizing in glutaric and its derivative acid solutions was investigated based on the acid dissociation constants of electrolytes. High-purity aluminum foils were anodized in glutaric, ketoglutaric, and acetonedicarboxylic acid solutions under various electrochemical conditions. A thin barrier anodic oxide film grew uniformly on the aluminum substrate by glutaric acid anodizing, and further anodizing caused the film to breakdown due to a high electric field. In contrast, an anodic porous alumina film with a submicrometer-scale cell diameter was successfully formed by ketoglutaric acid anodizing at 293 K. However, the increase and decrease in the temperature of the ketoglutaric acid resulted in non-uniform oxide growth and localized pitting corrosion of the aluminum substrate. An anodic porous alumina film could also be fabricated by acetonedicarboxylic acid anodizing due to the relatively low dissociation constants associated with the acid. Acid dissociation constants are an important factor for the fabrication of anodic porous alumina films.

Synthesis and characterization of cobalt doped nickel oxide thin films by spray pyrolysis method

NASA Astrophysics Data System (ADS)

Sathisha, D.; Naik, K. Gopalakrishna

2018-05-01

Cobalt (Co) doped nickel oxide (NiO) thin films were deposited on glass substrates at a temperature of about 400 °C by spray pyrolysis method. The effect of Co doping concentration on structural, optical and compositional properties of NiO thin films was investigated. X-ray diffraction result shows that the deposited thin films are polycrystalline in nature. Surface morphologies of the deposited thin films were observed by FESEM and AFM. EDS spectra showed the incorporation of Co dopants in NiO thin films. Optical properties of the grown thin films were characterized by UV-visible spectroscopy. It was found that the optical band gap energy and transmittance of the films decrease with increasing Co doping concentration.

Determination and analysis of non-linear index profiles in electron-beam-deposited MgOAl2O3ZrO2 ternary composite thin-film optical coatings

NASA Astrophysics Data System (ADS)

Sahoo, N. K.; Thakur, S.; Senthilkumar, M.; Das, N. C.

2005-02-01

Thickness-dependent index non-linearity in thin films has been a thought provoking as well as intriguing topic in the field of optical coatings. The characterization and analysis of such inhomogeneous index profiles pose several degrees of challenges to thin-film researchers depending upon the availability of relevant experimental and process-monitoring-related information. In the present work, a variety of novel experimental non-linear index profiles have been observed in thin films of MgOAl2O3ZrO2 ternary composites in solid solution under various electron-beam deposition parameters. Analysis and derivation of these non-linear spectral index profiles have been carried out by an inverse-synthesis approach using a real-time optical monitoring signal and post-deposition transmittance and reflection spectra. Most of the non-linear index functions are observed to fit polynomial equations of order seven or eight very well. In this paper, the application of such a non-linear index function has also been demonstrated in designing electric-field-optimized high-damage-threshold multilayer coatings such as normal- and oblique-incidence edge filters and a broadband beam splitter for p-polarized light. Such designs can also advantageously maintain the microstructural stability of the multilayer structure due to the low stress factor of the non-linear ternary composite layers.

Dependence of e31,f on polar axis texture for tetragonal Pb(Zrx,Ti1-x)O3 thin films

NASA Astrophysics Data System (ADS)

Yeager, Charles B.; Ehara, Yoshitaka; Oshima, Naoya; Funakubo, Hiroshi; Trolier-McKinstry, Susan

2014-09-01

It was shown by Ouyang et al. [Appl. Phys. Lett. 86, 152901 (2005)] that the piezoelectric e31,f coefficient is largest parallel to the spontaneous polarization in tetragonal PbZrxTi1-xO3 (PZT) films. However, the expected piezoelectric data are typically calculated from phenomenological constants derived from data on ceramic PZT. In this work, the dependence of e31,f on c-axis texture fraction, f001, for {001}PZT thin films was measured by growing films with systematically changed f001 using CaF2, MgO, SrTiO3, and Si substrates. An approximately linear increase in e31,f with f001 was observed for compositions up to 43 mol. % Zr, and 100% c-domain properties were extrapolated. It was demonstrated that c-axis PZT films can achieve e31,f exceeding -12 C/m2 for many tetragonal compositions. The energy harvesting figure of merit, e31,f2/ɛr, for c-axis PZT films surpassed 0.8 C2/m4. This is larger than the figure of merit of gradient-free PZT films grown on Si substrates by a factor of four.

Insight into the epitaxial encapsulation of Pd catalysts in an oriented metalloporphyrin network thin film for tandem catalysis.

PubMed

Vohra, M Ismail; Li, De-Jing; Gu, Zhi-Gang; Zhang, Jian

2017-06-14

A palladium catalyst (Pd-Cs) encapsulated metalloporphyrin network PIZA-1 thin film with bifunctional properties has been developed through a modified epitaxial layer-by-layer encapsulation approach. Combining the oxidation activity of Pd-Cs and the acetalization activity of the Lewis acidic sites in the PIZA-1 thin film, this bifunctional catalyst of the Pd-Cs@PIZA-1 thin film exhibits a good catalytic activity in a one-pot tandem oxidation-acetalization reaction. Furthermore, the surface components can be controlled by ending the top layer with different precursors in the thin film preparation procedures. The catalytic performances of these thin films with different surface composites were studied under the same conditions, which showed different reaction conversions. The result revealed that the surface component can influence the catalytic performance of the thin films. This epitaxial encapsulation offers a good understanding of the tandem catalysis for thin film materials and provides useful guidance to develop new thin film materials with catalytic properties.

Generation of low work function, stable compound thin films by laser ablation

DOEpatents

Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

2001-01-01

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Exciting transition metal doped dilute magnetic thin films: MgO:Er and ZnO:Er

NASA Astrophysics Data System (ADS)

Ćakıcı, T.; Sarıtaş, S.; Muǧlu, G. Merhan; Yıldırım, M.

2017-02-01

Erbium doped MgO and doped ZnO thin films have reasonably important properties applications in spintronic devices. These films were synthesized on glass substrates by Chemical Spray Pyrolysis (CSP) method. In the literature there has been almost no report on preparation of MgO:Er dilute magnetic thin films by means of CSP. Because doped thin films show different magnetic behaviors, depending upon the type of magnetic material ions, concentration of them, synthesis route and experimental conditions, synthesized MgO:Er and ZnO:Er films were compared to thin film properties. Optical analyses of the synthesized thin films were examined spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Structural analysis of the thin films was examined by using XRD, Raman Analysis, FE-SEM, EDX and AFM techniques. Also, magnetic properties of the MgO:Er and ZnO:Er films were investigated by vibrating sample magnetometer (VSM) which show that diamagnetic behavior of the MgO:Er thin film and ferromagnetic (FM) behavior of the ZnO:Er film were is formed.

Thin-film optical initiator

DOEpatents

Erickson, Kenneth L.

2001-01-01

A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

Fabrication and etching processes of silicon-based PZT thin films

NASA Astrophysics Data System (ADS)

Zhao, Hongjin; Liu, Yanxiang; Liu, Jianshe; Ren, Tian-Ling; Liu, Li-Tian; Li, Zhijian

2001-09-01

Lead-zirconate-titanate (PZT) thin films on silicon were prepared by a sol-gel method. Phase characterization and crystal orientation of the films were investigated by x-ray diffraction analysis (XRD). It was shown that the PZT thin films had a perfect perovskite structure after annealed at a low temperature of 600 degrees C. PZT thin films were chemically etched using HCl/HF solution through typical semiconductor lithographic process, and the etching condition was optimized. The scanning electron microscopy results indicated that the PZT thin film etching problem was well solved for the applications of PZT thin film devices.

Polymer nanomechanics: Separating the size effect from the substrate effect in nanoindentation

NASA Astrophysics Data System (ADS)

Li, Le; Encarnacao, Lucas M.; Brown, Keith A.

2017-01-01

While the moduli of thin polymer films are known to deviate dramatically from their bulk values, there is not a consensus regarding the nature of this size effect. In particular, indenting experiments appear to contradict results from both buckling experiments and molecular dynamics calculations. In this letter, we present a combined computational and experimental method for measuring the modulus of nanoindented soft films on rigid substrates that reconciles this discrepancy. Through extensive finite element simulation, we determine a correction to the Hertzian contact model that separates the substrate effect from the thickness-dependent modulus of the film. Interestingly, this correction only depends upon a dimensionless film thickness and the Poisson ratio of the film. To experimentally test this approach, we prepared poly(methyl methacrylate), polystyrene, and parylene films with thicknesses ranging from 20 to 300 nm and studied these films using atomic force microscope-based nanoindenting. Strikingly, when experiments were interpreted using the computationally derived substrate correction, sub-70 nm films were found to be softer than bulk, in agreement with buckling experiments and molecular dynamics studies. This correction can serve as a general method for unambiguously determining the size effect of thin polymer films and ultimately lead to the ability to quantitatively image the mechanical properties of heterogeneous materials such as composites.

Influence of interfacial rheology on stabilization of the tear film

NASA Astrophysics Data System (ADS)

Bhamla, M. Saad; Fuller, Gerald G.

2014-11-01

The tear film that protecting the ocular surface is a complex, thin film comprised of a collection of proteins and lipids that come together to provide a number of important functions. Of particular interest in this presentation is meibum, an insoluble layer that is spread from glands lining our eyelids. Past work has focussed on the role of this layer in reducing evaporation, although conflicting evidence on its ability to reduce evaporative loss has been published. We present here the beneficial effects that are derived through the interfacial viscoelasticity of the meibomian lipid film. This is a duplex film is comprised of a rich mixture of phospholipids, long chain fatty esters, and cholesterol esters. Using interfacial rheology measurements, meibum has been shown to be highly viscoelastic. By measuring the drainage and dewetting dynamics of thin aqueous films from hemispherical surfaces where those films are laden with insoluble layers of lipids at controlled surface pressure, we offer evidence that these layers strongly stabilize the films because of their ability to support surface shearing stresses. This alternative view of the role of meibum can help explain the origin of meibomian gland dysfunction, or dry eye disease, where improper compositions of this lipid mixture do not offer the proper mechanical resistance to breakage and dewetting of the tear film.

Investigations of Si Thin Films as Anode of Lithium-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Qingliu; Shi, Bing; Bareño, Javier

Amorphous silicon thin films having various thicknesses were investigated as a negative electrode material for lithium-ion batteries. Electrochemical characterization of the 20 nm thick thin silicon film revealed a very low first cycle Coulombic efficiency, which can be attributed to the silicon oxide layer formed on both the surface of the as-deposited Si thin film and the interface between the Si and the substrate. Among the investigated films, the 100 nm Si thin film demonstrated the best performance in terms of first cycle efficiency and cycle life. Observations from scanning electron microscopy demonstrated that the generation of cracks was inevitablemore » in the cycled Si thin films, even as the thickness of the film was as little as 20 nm, which was not predicted by previous modeling work. However, the cycling performance of the 20 and 100 nm silicon thin films was not detrimentally affected by these cracks. The poor capacity retention of the 1 mu m silicon thin film was attributed to the delamination.« less

Low-Cost Detection of Thin Film Stress during Fabrication

NASA Technical Reports Server (NTRS)

Nabors, Sammy A.

2015-01-01

NASA's Marshall Space Flight Center has developed a simple, cost-effective optical method for thin film stress measurements during growth and/or subsequent annealing processes. Stress arising in thin film fabrication presents production challenges for electronic devices, sensors, and optical coatings; it can lead to substrate distortion and deformation, impacting the performance of thin film products. NASA's technique measures in-situ stress using a simple, noncontact fiber optic probe in the thin film vacuum deposition chamber. This enables real-time monitoring of stress during the fabrication process and allows for efficient control of deposition process parameters. By modifying process parameters in real time during fabrication, thin film stress can be optimized or controlled, improving thin film product performance.

Compositional ratio effect on the surface characteristics of CuZn thin films

NASA Astrophysics Data System (ADS)

Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

2018-05-01

CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

A thin film nitinol heart valve.

PubMed

Stepan, Lenka L; Levi, Daniel S; Carman, Gregory P

2005-11-01

In order to create a less thrombogenic heart valve with improved longevity, a prosthetic heart valve was developed using thin film nitinol (NiTi). A "butterfly" valve was constructed using a single, elliptical piece of thin film NiTi and a scaffold made from Teflon tubing and NiTi wire. Flow tests and pressure readings across the valve were performed in vitro in a pulsatile flow loop. Bio-corrosion experiments were conducted on untreated and passivated thin film nitinol. To determine the material's in vivo biocompatibility, thin film nitinol was implanted in pigs using stents covered with thin film NiTi. Flow rates and pressure tracings across the valve were comparable to those through a commercially available 19 mm Perimount Edwards tissue valve. No signs of corrosion were present on thin film nitinol samples after immersion in Hank's solution for one month. Finally, organ and tissue samples explanted from four pigs at 2, 3, 4, and 6 weeks after thin film NiTi implantation appeared without disease, and the thin film nitinol itself was without thrombus formation. Although long term testing is still necessary, thin film NiTi may be very well suited for use in artificial heart valves.

The effect of thin film morphology on the electrochemical performance of Cu-Sn anode for lithium rechargeable batteries.

PubMed

Polat, B D; Keleş, O

2014-05-01

We investigate the anode performance of non ordered and ordered nanostructured Cu-Sn thin films deposited via electron beam deposition technique. The ordered nanostructured Cu-Sn thin film having nano-porosities was fabricated using an oblique (co)deposition technique. Our results showed that the nano structured Cu-Sn thin film containing Cu-Sn nanorods had higher initial anodic capacity (790 mA h g(-)) than that of the non ordered thin film (330 mA h g(-)). But the capacity of the ordered nanostructured Cu-Sn thin film diminished after the first cycle and a steady state capacity value around 300 mA h g(-) is sustainable in following up to 80th cycle, which is attributed to the composition and morphology of the thin film. The presence of copper containing Sn nanorods leading to form nano-porosities as interstitial spaces among them, enhanced lithium ions movement within thin film and increased the thin film tolerance against the stress generated because of the drastic volume change occurred during lithiation-delithiation processes; hence, homogenously distributed porosities increased the cycle life of the thin film.

Specific considerations for obtaining appropriate La1-xSrxGa1-yMgyO3-δ thin films using pulsed-laser deposition and its influence on the performance of solid-oxide fuel cells

NASA Astrophysics Data System (ADS)

Hwang, Jaeyeon; Lee, Heon; Lee, Jong-Ho; Yoon, Kyung Joong; Kim, Hyoungchul; Hong, Jongsup; Son, Ji-Won

2015-01-01

To obtain La1-xSrxGa1-yMgyO3-δ (LSGM) thin films with the appropriate properties, pulsed-laser deposition (PLD) is employed, and specific considerations regarding control of the deposition parameters is investigated. It is demonstrated that with a target of stoichiometric composition, appropriate LSGM thin films cannot be produced because of the deviation of the composition from the target to the thin film. Only after adjusting the target composition an LSGM thin film with an appropriate composition and phase can be obtained. The optimized LSGM thin film possesses an electrical conductivity close to that of the bulk LSGM. In contrast, non-optimized thin films do not yield any measurable electrical conductivity. The impact of the optimization of the LSGM thin-film electrolyte on the cell performance is quite significant, in that a solid-oxide fuel cell (SOFC) with an optimized LSGM thin-film electrolyte produces a maximum power density of 1.1 W cm-2 at 600 °C, whereas an SOFC with a non-optimal LSGM thin-film electrolyte is not operable.

Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdullah, M. A. R., E-mail: ameerridhwan89@gmail.com; Mamat, M. H., E-mail: hafiz-030@yahoo.com; Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com

2016-07-06

Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

DOEpatents

Hawkins, G.A.; Clarke, J.

1975-10-31

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

PubMed

Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

2017-08-29

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

Effect of Substrate Roughness on Adhesion and Structural Properties of Ti-Ni Shape Memory Alloy Thin Film.

PubMed

Kim, Donghwan; Lee, Hyunsuk; Bae, Joohyeon; Jeong, Hyomin; Choi, Byeongkeun; Nam, Taehyun; Noh, Jungpil

2018-09-01

Ti-Ni shape memory alloy (SMA) thin films are very attractive material for industrial and medical applications such as micro-actuator, micro-sensors, and stents for blood vessels. An important property besides shape memory effect in the application of SMA thin films is the adhesion between the film and the substrate. When using thin films as micro-actuators or micro-sensors in MEMS, the film must be strongly adhered to the substrate. On the other hand, when using SMA thin films in medical devices such as stents, the deposited alloy thin film must be easily separable from the substrate for efficient processing. In this study, we investigated the effect of substrate roughness on the adhesion of Ti-Ni SMA thin films, as well as the structural properties and phase-transformation behavior of the fabricated films. Ti-Ni SMA thin films were deposited onto etched glass substrates with magnetron sputtering. Radio frequency plasma was used for etching the substrate. The adhesion properties were investigated through progressive scratch test. Structural properties of the films were determined via Feld emission scanning electron microscopy, X-ray diffraction measurements (XRD) and Energy-dispersive X-ray spectroscopy analysis. Phase transformation behaviors were observed with differential scanning calorimetry and low temperature-XRD. Ti-Ni SMA thin film deposited onto rough substrate provides higher adhesive strength than smooth substrate. However the roughness of the substrate has no influence on the growth and crystallization of the Ti-Ni SMA thin films.

Effects of high temperature and film thicknesses on the texture evolution in Ag thin films

NASA Astrophysics Data System (ADS)

Eshaghi, F.; Zolanvari, A.

2017-04-01

In situ high-temperature X-ray diffraction techniques were used to study the effect of high temperatures (up to 600°C) on the texture evolution in silver thin films. Ag thin films with different thicknesses of 40, 80, 120 and 160nm were sputtered on the Si(100) substrates at room temperature. Then, microstructure of thin films was determined using X-ray diffraction. To investigate the influence of temperature on the texture development in the Ag thin films with different thicknesses, (111), (200) and (220) pole figures were evaluated and orientation distribution functions were calculated. Minimizing the total energy of the system which is affected by competition between surface and elastic strain energy was a key factor in the as-deposited and post annealed thin films. Since sputtering depositions was performed at room temperature and at the same thermodynamic conditions, the competition growth caused the formation of the {122} < uvw \\rangle weak fiber texture in as-deposited Ag thin films. It was significantly observed that the post annealed Ag thin films showed {111} < uvw \\rangle orientations as their preferred orientations, but their preferred fiber texture varied with the thickness of thin films. Increasing thin film thickness from 40nm to 160nm led to decreasing the intensity of the {111} < uvw \\rangle fiber texture.

The Tuning of Optical Properties of Nanoscale MOFs-Based Thin Film through Post-Modification.

PubMed

Yin, Wenchang; Tao, Cheng-An; Zou, Xiaorong; Wang, Fang; Qu, Tianlian; Wang, Jianfang

2017-08-29

Optical properties, which determine the application of optical devices in different fields, are the most significant properties of optical thin films. In recent years, Metal-organic framework (MOF)-based optical thin films have attracted increasing attention because of their novel optical properties and important potential applications in optical and photoelectric devices, especially optical thin films with tunable optical properties. This study reports the first example of tuning the optical properties of a MOF-based optical thin film via post-modification. The MOF-based optical thin film was composed of NH₂-MIL-53(Al) nanorods (NRs) (MIL: Materials from Institute Lavoisier), and was constructed via a spin-coating method. Three aldehydes with different lengths of carbon chains were chosen to modify the MOF optical thin film to tune their optical properties. After post-modification, the structural color of the NH₂-MIL-53(Al) thin film showed an obvious change from purple to bluish violet and cyan. The reflection spectrum and the reflectivity also altered in different degrees. The effective refractive index ( n eff ) of MOFs thin film can also be tuned from 1.292 to 1.424 at a wavelength of 750 nm. The success of tuning of the optical properties of MOFs thin films through post-modification will make MOFs optical thin films meet different needs of optical properties in various optical and optoelectronic devices.

The Tuning of Optical Properties of Nanoscale MOFs-Based Thin Film through Post-Modification

PubMed Central

Zou, Xiaorong; Wang, Fang; Qu, Tianlian; Wang, Jianfang

2017-01-01

Optical properties, which determine the application of optical devices in different fields, are the most significant properties of optical thin films. In recent years, Metal-organic framework (MOF)-based optical thin films have attracted increasing attention because of their novel optical properties and important potential applications in optical and photoelectric devices, especially optical thin films with tunable optical properties. This study reports the first example of tuning the optical properties of a MOF-based optical thin film via post-modification. The MOF-based optical thin film was composed of NH2-MIL-53(Al) nanorods (NRs) (MIL: Materials from Institute Lavoisier), and was constructed via a spin-coating method. Three aldehydes with different lengths of carbon chains were chosen to modify the MOF optical thin film to tune their optical properties. After post-modification, the structural color of the NH2-MIL-53(Al) thin film showed an obvious change from purple to bluish violet and cyan. The reflection spectrum and the reflectivity also altered in different degrees. The effective refractive index (neff) of MOFs thin film can also be tuned from 1.292 to 1.424 at a wavelength of 750 nm. The success of tuning of the optical properties of MOFs thin films through post-modification will make MOFs optical thin films meet different needs of optical properties in various optical and optoelectronic devices. PMID:28850057

Growth temperature modulated phase evolution and functional characteristics of high quality Pb1-x Lax (Zr0.9Ti0.1)O3 thin films

NASA Astrophysics Data System (ADS)

Kumar, Anuj; Pawar, Shuvam; Singh, Kirandeep; Kaur, Davinder

2018-05-01

In this study, we have reported the influence of growth temperature on perovskite phase evolution in sputtered deposited high quality Pb1-x Lax (Zr0.9 Ti0.1)O3 (PLZT) thin films on Pt/Ti/SiO2/Si substrate. PLZT thin films were fabricated at substrate temperature ranging from 400 to 700 °C. We have investigated the structural, dielectric, ferroelectric and leakage current characteristics of these thin films. XRD patterns reveal that 600 °C is the optimized temperature to deposit highly (110) oriented perovskite phase PLZT thin film. The further increase in temperature (700 °) causes reappearance of additional peaks corresponding to lead deficient pyrochlore phase. All PLZT thin films show decrease in dielectric constant with frequency. However, PLZT thin film fabricated at 600 °C displays dielectric constant ˜532 at 1 MHz frequency which is relatively higher than other deposited thin films. The P-E loops of these PLZT thin films exhibit strong dependence on deposition temperature. The pure perovskite PZLT thin film shows saturation polarization of ˜51.2µC/cm2 and coercive field (2Ec) ˜67.85 kV/cm. These high quality PLZT thin films finds their applications in non-volatile memory and nano-electro-mechanical systems (NEMS).

Dewetting of Thin Polymer Films

NASA Astrophysics Data System (ADS)

Dixit, P. S.; Sorensen, J. L.; Kent, M.; Jeon, H. S.

2001-03-01

DEWETTING OF THIN POLYMER FILMS P. S. Dixit,(1) J. L. Sorensen,(2) M. Kent,(2) H. S. Jeon*(1) (1) Department of Petroleum and Chemical Engineering, New Mexico Institute of Mining and Technology, 801 Leroy Place, Socorro, NM 87801, jeon@nmt.edu (2) Department 1832, Sandia National Laboratories, Albuquerque, NM. Dewetting of thin polymer films is of technological importance for a variety of applications such as protective coatings, dielectric layers, and adhesives. Stable and smooth films are required for the above applications. Above the glass transition temperature (Tg) the instability of polymer thin films on a nonwettable substrate can be occurred. The dewetting mechanism and structure of polypropylene (Tg = -20 ^circC) and polystyrene (Tg = 100 ^circC) thin films is investigated as a function of film thickness (25 Åh < 250 Åand quenching temperature. Contact angle measurements are used in conjunction with optical microscope to check the surface homogeneity of the films. Uniform thin films are prepared by spin casting the polymer solutions onto silicon substrates with different contact angles. We found that the stable and unstable regions of the thin films as a function of the film thickness and quenching temperature, and then constructed a stability diagram for the dewetting of thin polymer films. We also found that the dewetting patterns of the thin films are affected substantially by the changes of film thickness and quenching temperature.

Temperature dependence of LRE-HRE-TM thin films

NASA Astrophysics Data System (ADS)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

Surface proton transport of fully protonated poly(aspartic acid) thin films on quartz substrates

NASA Astrophysics Data System (ADS)

Nagao, Yuki; Kubo, Takahiro

2014-12-01

Thin film structure and the proton transport property of fully protonated poly(aspartic acid) (P-Asp100) have been investigated. An earlier study assessed partially protonated poly(aspartic acid), highly oriented thin film structure and enhancement of the internal proton transport. In this study of P-Asp100, IR p-polarized multiple-angle incidence resolution (P-MAIR) spectra were measured to investigate the thin film structure. The obtained thin films, with thicknesses of 120-670 nm, had no oriented structure. Relative humidity dependence of the resistance, proton conductivity, and normalized resistance were examined to ascertain the proton transport property of P-Asp100 thin films. The obtained data showed that the proton transport of P-Asp100 thin films might occur on the surface, not inside of the thin film. This phenomenon might be related with the proton transport of the biological system.

Thin film superconductor magnetic bearings

DOEpatents

Weinberger, Bernard R.

1995-12-26

A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

Effects of ion irradiation on the surface mechanical behavior of hybrid sol-gel derived silicate thin films

NASA Astrophysics Data System (ADS)

Ghisleni, Rudy

A study on the effects of ion irradiation on the surface mechanical behavior of hybrid sol-gel derived thin films has been performed. Hybrid organic/inorganic modified silicate thin films were synthesized by sol-gel processing from tetraethoxysilane (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto (100) Si substrates. The synthesized films were investigated by nanoindentation, photoluminescence spectroscopy, and Raman spectroscopy. Hybrid TEOS/MTES sol-gel films modified by ion irradiation with deposited electronic energies of 1.87 x 1025 eV/cm3 or higher showed higher values of reduced elastic modulus and hardness than 800°C heat treated films. Thus, ion irradiation was found to be an effective means in converting the polymer sol into ceramic type coatings. The ions used in this study were Cu2+, N2+, Si+, O+, N+, He+, and H+, with incident energies ranging from 100 keV to 2 MeV, and fluences ranging from 1 x 1014 to 1 x 1017 ions/cm2. Both the reduced elastic modulus and hardness were seen to increase monotonically with the increase in ion fluence, with an observed maximum hardness of 7.7 GPa (an unirradiated film hardness was 0.4 GPa) and a maximum reduced elastic modulus of 84.0 GPa (an unirradiated film reduced elastic modulus was 7.1 GPa) for 250 keV N2+ irradiation with a 5 x 1016 ions/cm2 fluence. The electronic stopping power was found to be principally responsible for the film hardening, while the role of nuclear stopping power was minimal. A monotonic increase in hardness with increase in electronic energy deposited to the film surface was found. A model describing the hardening of ion irradiated films was developed. This model characterizes the hardening effectiveness of the ion species considered by two parameters: the constant hardening cross-section and the hardening coefficient. Where the hardening cross-section represents the cross-sectional area hardened by the interaction of an incident ion with the target, and the hardening coefficient represents an index of the cross-sectional area gradient as a function of fluence. The increase in hardness of hybrid sol-gel films following ion irradiation was linked to structural changes. Ion irradiation results in a cross-linked silica film as well as the segregation of amorphous carbon clusters, both of which contributed to increase the mechanical properties of the films.

Optical and morphological properties of sol gel derived titanium dioxide films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, A. B.; Sharma, S. K.; M, Vishwas

2015-08-28

Titanium oxide (Titania) thin films were synthesized on different substrates via the sol-gel dip-coating method using alkoxide solution. Some selected samples were also prepared with different percentage of Lead (Pb). The influence of Pb addition in precursor sol on the optical properties of titanium dioxide thin films was studied. The optical transmittance in the visible region has increased with increase in weight percentage of lead. The refractive index was slightly decreased with Pb addition. Crystallization of these coatings was achieved through thermal annealing at temperatures above 400 °C. The structural properties and surface morphology of the crystallized coatings were studiedmore » by Scanning Electron Microscopy. Increase in average grain size from 250 nm to 350 nm with increase in Pb concentration is observed. Films were appeared to more coarse with increase in Pb addition. An increase in Pb addition resulted increase in average roughness from 12 nm to 25 nm.« less

Metal Induced Growth of Si Thin Films and NiSi Nanowires

DTIC Science & Technology

2010-02-25

Zinc Oxide Over MIG Silicon- We have been studying the formation of ZnO films by RF sputtering. Part of this study deals with...about 50 nm. 15. SUBJECT TERMS Thin film silicon, solar cells, thin film transistors , nanowires, metal induced growth 16. SECURITY CLASSIFICATION...to achieve, µc-Si is more desirable than a-Si due to its increased mobility. Thin film µc-Si is also a popular material for thin film transistors

NMR characterization of thin films

DOEpatents

Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2010-06-15

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

NMR characterization of thin films

DOEpatents

Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2008-11-25

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

NASA Astrophysics Data System (ADS)

Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

2017-05-01

Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

Quantum-well states in thin Ag films grown on the Ga/Si(111)-√{3 }×√{3 } surface

NASA Astrophysics Data System (ADS)

Starfelt, S.; Zhang, H. M.; Johansson, L. S. O.

2018-05-01

Silver thin films have been created by room temperature deposition on a Ga/Si(111)-√{3 }×√{3 } surface and their valence band structures and core levels have been measured by angle-resolved photoelectron spectroscopy (ARPES). Discrete quantum-well states (QWSs) quantized from the Ag s p valence band are observed already at 3 monolayers (ML). The characteristics of the QWSs have been examined in the phase accumulation model for thicknesses between 3 and 12 ML. The phase shift and QWSs binding energies dependence with Ag film thicknesses have all been consistently derived. In-plane energy dispersion follows a parabolic curve, and the effective mass of the QWSs shows an increasing trend with binding energies as well as with reduced film thicknesses. Furthermore, the ARPES measurements reveal umklapp mediated QWSs around the M ¯ points of the Si(111) 1 ×1 surface Brillouin zone. The study confirms that the Ga/Si(111)-√{3 }×√{3 } surface is a good substrate for growing uniform ultrathin Ag films in room temperature conditions.

A general strategy for hybrid thin film fabrication and transfer onto arbitrary substrates.

PubMed

Zhang, Yong; Magan, John J; Blau, Werner J

2014-04-28

The development of thin film-based structures/devices often requires thin films to be transferred onto arbitrary substrates/surfaces. Controllable and non-destructive transfer method, although highly desired, remains quite challenging. Here we report a general method for fabrication and transfer of hybrid (ultra)thin films. The proposed solution-based in-situ transfer method shows not only its robust ability for thin film transfer onto arbitrary substrates but also its highly controlled and non-destructive characteristic. With a hole structure as the support, fully-stretched free-standing thin film is prepared. The successful transfer to a curved surface demonstrates the possibility for production of thin film-coated complex optical components. Ultrathin (35 nm) hybrid film transferred onto PET (50 μm thick) shows high transparency (>90% in visible range), conductivity (1.54 × 10(4) S/m), and flexibility (radius of curvature down to mm scale). The reported transfer method would provide a powerful route towards complex thin film-based structures/devices.

A General Strategy for Hybrid Thin Film Fabrication and Transfer onto Arbitrary Substrates

PubMed Central

Zhang, Yong; Magan, John J.; Blau, Werner J.

2014-01-01

The development of thin film-based structures/devices often requires thin films to be transferred onto arbitrary substrates/surfaces. Controllable and non-destructive transfer method, although highly desired, remains quite challenging. Here we report a general method for fabrication and transfer of hybrid (ultra)thin films. The proposed solution-based in-situ transfer method shows not only its robust ability for thin film transfer onto arbitrary substrates but also its highly controlled and non-destructive characteristic. With a hole structure as the support, fully-stretched free-standing thin film is prepared. The successful transfer to a curved surface demonstrates the possibility for production of thin film-coated complex optical components. Ultrathin (35 nm) hybrid film transferred onto PET (50 μm thick) shows high transparency (>90% in visible range), conductivity (1.54 × 104 S/m), and flexibility (radius of curvature down to mm scale). The reported transfer method would provide a powerful route towards complex thin film-based structures/devices. PMID:24769689

Quantitative thickness measurement of polarity-inverted piezoelectric thin-film layer by scanning nonlinear dielectric microscopy

NASA Astrophysics Data System (ADS)

Odagawa, Hiroyuki; Terada, Koshiro; Tanaka, Yohei; Nishikawa, Hiroaki; Yanagitani, Takahiko; Cho, Yasuo

2017-10-01

A quantitative measurement method for a polarity-inverted layer in ferroelectric or piezoelectric thin film is proposed. It is performed nondestructively by scanning nonlinear dielectric microscopy (SNDM). In SNDM, linear and nonlinear dielectric constants are measured using a probe that converts the variation of capacitance related to these constants into the variation of electrical oscillation frequency. In this paper, we describe a principle for determining the layer thickness and some calculation results of the output signal, which are related to the radius of the probe tip and the thickness of the inverted layer. Moreover, we derive an equation that represents the relationship between the output signal and the oscillation frequency of the probe and explain how to determine the thickness from the measured frequency. Experimental results in Sc-doped AlN piezoelectric thin films that have a polarity-inverted layer with a thickness of 1.5 µm fabricated by radio frequency magnetron sputtering showed a fairly good value of 1.38 µm for the thickness of the polarity-inverted layer.

Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal—insulator phase transition properties

NASA Astrophysics Data System (ADS)

Liang, Ji-Ran; Wu, Mai-Jun; Hu, Ming; Liu, Jian; Zhu, Nai-Wei; Xia, Xiao-Xu; Chen, Hong-Da

2014-07-01

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal—insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from (1¯11) to (011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal—insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal—insulator transition.

Synthesis, characterization, and photocatalytic properties of nanocrystalline NZO thin films

NASA Astrophysics Data System (ADS)

Aryanto, D.; Hastuti, E.; Husniya, N.; Sudiro, T.; Nuryadin, B. W.

2018-03-01

Nanocrystalline Ni-doped ZnO (NZO) thin films were synthesized on glass substrate using sol-gel spin coating methods. The effect of annealing on the structural and optical properties of nanocrystalline thin film was studied using X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), UV-VIS spectrophotometry, and photoluminescence (PL). The results showed that the annealing temperature strongly influenced the physical properties of nanocrystalline NZO thin films. The photocatalytic properties of nanocrystalline NZO thin films were evaluated using an aqueous solution of Rhodamine-B. The photocatalytic activity of nanocrystalline NZO thin films increased with the increase of annealing temperature. The results indicated that the structure, morphology, and band gap energy of nanocrystalline NZO thin films played an important role in photocatalytic activity.

Metallic Thin-Film Bonding and Alloy Generation

NASA Technical Reports Server (NTRS)

Peotter, Brian S. (Inventor); Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Droppers, Lloyd (Inventor)

2016-01-01

Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

Advances in Thin Film Thermocouple Durability Under High Temperature and Pressure Testing Conditions

NASA Technical Reports Server (NTRS)

Martin, Lisa C.; Fralick, Gustave C.; Taylor, Keith F.

1999-01-01

Thin film thermocouples for measuring material surface temperature have been previously demonstrated on several material systems and in various hostile test environments. A well-developed thin film fabrication procedure utilizing shadow masking for patterning the sensors elements had produced thin films with sufficient durability for applications in high temperature and pressure environments that exist in air-breathing and hydrogen-fueled burner rig and engine test facilities. However, while shadow masking had been a reliable method for specimens with flat and gently curved surfaces, it had not been consistently reliable for use on test components with sharp contours. This work reports on the feasibility of utilizing photolithography processing for patterning thin film thermocouples. Because this patterning process required changes in the thin film deposition process from that developed for shadow masking, the effect of these changes on thin film adherence during burner rig testing was evaluated. In addition to the results of changing the patterning method, the effects on thin film adherence of other processes used in the thin film fabrication procedure is also presented.

Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shaikh, Shaheed U.; Desale, Dipalee J.; Siddiqui, Farha Y.

2012-11-15

Graphical abstract: The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity. Highlights: ► The preparation of CdS nanodot thin film at room temperature by M-CBD technique. ► Study of air annealing on prepared CdS nanodots thin film. ► The optimized annealing temperature for CdS nanodot thin film is 350 °C. ► Modified CdS thin films can be used in photosensor application. -- Abstract: CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature usingmore » modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.« less

Effect of annealing temperatures on the morphology and structural properties of PVDF/MgO nanocomposites thin films

NASA Astrophysics Data System (ADS)

Rozana, M. D.; Arshad, A. N.; Wahid, M. H. M.; Habibah, Z.; Sarip, M. N.; Rusop, M.

2018-05-01

This study investigates the effect of annealing on the topography, morphology and crystal phases of poly(vinylideneflouride)/Magnesium Oxide (MgO) nanocomposites thin films via AFM, FESEM and ATR-FTIR. The nanocomposites thin films were annealed at temperatures ranging from 70°C to 170°C. The annealed PVDF/MgO nanocomposites thin films were then cooled at room temperature before removal from the oven. This is to restructure the crystal lattice and to reduce imperfection for the PVDF/MgO nanocomposites thin films. PVDF/MgO nanocomposites thin films with annealing temperatures of 70°C, 90°C and 110°C showed uniform distribution of MgO nanoparticles, relatively low average surface roughness and no visible of defects. High application of annealing temperature on PVDF/MgO nanocomposites thin films caused tear-like defects on the thin films surface as observed by FESEM. The PVDF/MgO nanocomposites thin films annealed at 70°C was found to be a favourable film to be utilized in this study due to its enhanced β-crystalites of PVDF as evident in ATR-FTIR spectra.

Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

NASA Astrophysics Data System (ADS)

Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

2018-03-01

Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

Nanocrystal thin film fabrication methods and apparatus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Pyrolyzed thin film carbon

NASA Technical Reports Server (NTRS)

Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor); Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor)

2010-01-01

A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp; Yamaguchi, Akihiro; Sakuda, Atsushi

2014-05-01

Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueousmore » solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.« less

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration.

PubMed

Choi, Jun Young; Heo, Keun; Cho, Kyung-Sang; Hwang, Sung Woo; Kim, Sangsig; Lee, Sang Yeol

2016-11-04

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses.

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

PubMed Central

Choi, Jun Young; Heo, Keun; Cho, Kyung-Sang; Hwang, Sung Woo; Kim, Sangsig; Lee, Sang Yeol

2016-01-01

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses. PMID:27812035

Kinetic study on UV-absorber photodegradation under different conditions

NASA Astrophysics Data System (ADS)

Bubev, Emil; Georgiev, Anton; Machkova, Maria

2016-09-01

The photodegradation kinetics of two benzophenone derivative UV-absorbers (UVAs)-BP-4 (benzophenone-4) and 4-HBP (4-hydroxybenzophenone), as additives in polyvinyl acetate (PVAc) films, were studied. Solution-processed PVAc films were irradiated in different environments in order to study oxygen and atmospheric humidity influence on UVA photodegradation. Photodegradation was traced by absorption intensity loss via UV-vis spectroscopy. Both UVAs exhibited excellent photostability in an inert atmosphere. Rate constants showed that BP-4 has better permanence in absence of oxygen. Both film types experienced rapid absorption loss, when irradiated in an oxygen containing atmosphere. UVA degradation was treated as a two-stage process. The photodegradation kinetics in the first stage agreed with the adopted complex rate law, but the second stage was best described by pseudo-first order kinetics. BP-4 exhibited better stability. Oxygen was established as the main accelerating factor for photodegradation of benzophenone derivatives UV-absorbers in thin PVAc films.

Control of three-dimensional waves on thin liquid films. I - Optimal control and transverse mode effects

NASA Astrophysics Data System (ADS)

Tomlin, Ruben; Gomes, Susana; Pavliotis, Greg; Papageorgiou, Demetrios

2017-11-01

We consider a weakly nonlinear model for interfacial waves on three-dimensional thin films on inclined flat planes - the Kuramoto-Sivashinsky equation. The flow is driven by gravity, and is allowed to be overlying or hanging on the flat substrate. Blowing and suction controls are applied at the substrate surface. In this talk we explore the instability of the transverse modes for hanging arrangements, which are unbounded and grow exponentially. The structure of the equations allows us to construct optimal transverse controls analytically to prevent this transverse growth. In this case and the case of an overlying film, we additionally study the influence of controlling to non-trivial transverse states on the streamwise and mixed mode dynamics. Finally, we solve the full optimal control problem by deriving the first order necessary conditions for existence of an optimal control, and solving these numerically using the forward-backward sweep method.

Preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films.

PubMed

Chen, Zhiwen; Jiao, Zheng; Wu, Minghong; Shek, Chan-Hung; Wu, C M Lawrence; Lai, Joseph K L

2012-01-01

Metal/semiconductor thin films are a class of unique materials that are widespread technological applications, particularly in the field of microelectronic devices. Assessment strategies of fractal and tures are of fundamental importance in the development of nano/microdevices. This review presents the preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films including Au/Ge bilayer films and Pd-Ge alloy thin films, which show in the form of fractals and nanocrystals. Firstly, the extended version of Au/Ge thin films for the fractal crystallization of amorphous Ge and the formation of nanocrystals developed with improved micro- and nanostructured features are described in Section 2. Secondly, the nano/microstructural characteristics of Pd/Ge alloy thin films during annealing have been investigated in detail and described in Section 3. Finally, we will draw the conclusions from the present work as shown in Section 4. It is expected that the preparation methodologies developed and the knowledge of nano/microstructural evolution gained in metal/semiconductor thin films, including Au/Ge bilayer films and Pd-Ge alloy thin films, will provide an important fundamental basis underpinning further interdisciplinary research in these fields such as physics, chemistry, materials science, and nanoscience and nanotechnology, leading to promising exciting opportunities for future technological applications involving these thin films.

Heavily-doped ZnO:Al thin films prepared by using magnetron Co-sputtering: Optical and electrical properties

NASA Astrophysics Data System (ADS)

Moon, Eun-A.; Jun, Young-Kil; Kim, Nam-Hoon; Lee, Woo-Sun

2016-07-01

Photovoltaic applications require transparent conducting-oxide (TCO) thin films with high optical transmittance in the visible spectral region (380 - 780 nm), low resistivity, and high thermal/chemical stability. The ZnO thin film is one of the most common alternatives to the conventional indium-tin-oxide (ITO) thin film TCO. Highly transparent and conductive ZnO thin films can be prepared by doping with group III elements. Heavily-doped ZnO:Al (AZO) thin films were prepared by using the RF magnetron co-sputtering method with ZnO and Al targets to obtain better characteristics at a low cost. The RF sputtering power to each target was varied to control the doping concentration in fixed-thickness AZO thin films. The crystal structures of the AZO thin films were analyzed by using X-ray diffraction. The morphological microstructure was observed by using scanning electron microscopy. The optical transmittance and the band gap energy of the AZO thin films were examined with an UV-visible spectrophotometer in the range of 300 - 1800 nm. The resistivity and the carrier concentration were examined by using a Hall-effect measurement system. An excellent optical transmittance > 80% with an appropriate band gap energy (3.26 - 3.27 eV) and an improved resistivity (~10 -1 Ω·cm) with high carrier concentration (1017 - 1019 cm -3) were demonstrated in 350-nm-thick AZO thin films for thin-film photovoltaic applications.

Decoding Nucleation and Growth of Zeolitic Imidazolate Framework Thin Films with Atomic Force Microscopy and Vibrational Spectroscopy.

PubMed

Öztürk, Zafer; Filez, Matthias; Weckhuysen, Bert M

2017-08-10

The synthesis of metal-organic framework (MOF) thin films has garnered significant attention during the past decade. By better understanding the parameters governing the nucleation and growth of such thin films, their properties can be rationally tuned, empowering their application as (reactive) membranes. Here, a combined AFM-vibrational spectroscopy research strategy is employed to detail the chemistries governing the nucleation and growth of zeolitic imidazolate framework (ZIF) thin films, in particular isostructural Co-ZIF-67 and Zn-ZIF-8. First, a single step direct synthesis approach is used to investigate the influence of different synthesis parameters -metal/linker ratio, temperature, and metal type- on the thin film nucleation and growth behaviour. While the metal/linker ratio has a pronounced effect on the thin film nucleation rate, the temperature mainly influences the growth kinetics of nuclei forming the thin film. In addition, the nucleation and growth of ZIF thin films is shown to be highly dependent on the electronegativity of the metal type. Thin-film thickness control can be achieved by using a multistep synthesis strategy, implying repetitive applications of single step deposition under identical synthesis conditions, for which a growth mechanism is proposed. This study provides insight into the influence of synthesis parameters on the ZIF thin film properties, using tools at hand to rationally tune MOF thin film properties. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

Understanding how processing additives tune nanoscale morphology of high efficiency organic photovoltaic blends: From casting solution to spun-cast thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, Ming; Keum, Jong Kahk; Kumar, Rajeev

2014-01-01

Adding a small amount of a processing additive to the casting solution of organic blends has been demonstrated to be an effective method for achieving improved power conversion efficiency (PCE) in organic photovoltaics (OPVs). However, an understanding of the nano-structural evolution occurring in the transformation from casting solution to thin photoactive films is still lacking. In this report, we investigate the effects of the processing additive diiodooctane (DIO) on the morphology of OPV blend of PBDTTT-C-T and fullerene derivative, PC71BM in a casting solution and in spun-cast thin films by using neutron/x-ray scattering, neutron reflectometry and other characterization techniques. Themore » results reveal that DIO has no effect on the solution structures of PBDTTT-C-T and PC71BM. In the spun-cast films, however, DIO is found to promote significantly the molecular ordering of PBDTTT-C-T and PC71BM, and phase segregation, resulting in the improved PCE. Thermodynamic analysis based on Flory-Huggins theory provides a rationale for the effects of DIO on different characteristics of phase segregation as a solvent and due to evaporationg during the film formation. Such information may enable improved rational design of ternary blends to more consistently achieve improved PCE for OPVs.« less

Effect of substitution group on dielectric properties of 4H-pyrano [3, 2-c] quinoline derivatives thin films

NASA Astrophysics Data System (ADS)

H, M. Zeyada; F, M. El-Taweel; M, M. El-Nahass; M, M. El-Shabaan

2016-07-01

The AC electrical conductivity and dielectrical properties of 2-amino-6-ethyl-5-oxo-4-(3-phenoxyphenyl)-5,6-dihydro-4H-pyrano[3, 2-c]quinoline-3-carbonitrile (Ph-HPQ) and 2-amino-4-(2-chlorophenyl)-6-ethyl-5-oxo-5,6-dihydro-4H-pyrano [3, 2-c] quinoline-3-carbonitrile (Ch-HPQ) thin films were determined in the frequency range of 0.5 kHz-5 MHz and the temperature range of 290-443 K. The AC electrical conduction of both compounds in thin film form is governed by the correlated barrier hopping (CBH) mechanism. Some parameters such as the barrier height, the maximum barrier height, the density of charges, and the hopping distance were determined as functions of temperature and frequency. The phenoxyphenyl group has a greater influence on those parameters than the chlorophenyl group. The AC activation energies were determined at different frequencies and temperatures. The dielectric behaviors of Ph-HPQ and Ch-HPQ were investigated using the impedance spectroscopy technique. The impedance data are presented in Nyquist diagrams for different temperatures. The Ch-HPQ films have higher impedance than the Ph-HPQ films. The real dielectric constant and dielectric loss show a remarkable dependence on the frequency and temperature. The Ph-HPQ has higher dielectric constants than the Ch-HPQ.

Oriented thin films of mixture of a low-bandgap polymer and a fullerene derivative prepared by friction-transfer method

NASA Astrophysics Data System (ADS)

Tanigaki, Nobutaka; Mizokuro, Toshiko; Miyadera, Tetsuhiko; Shibata, Yousei; Koganezawa, Tomoyuki

2018-02-01

We have been studying oriented thin films of polymers fabricated by the friction-transfer method, which allows the alignment of a variety of conjugated polymers into highly oriented films. In this study, we prepared oriented blend films of a mixture of a low-bandgap polymer, poly{4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b‧]dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl} (PTB7), and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), which is a promising combination for application in organic solar cells. We obtained oriented blend films of PTB7 and PC71BM by the friction-transfer method from a solid block. Polarized UV-visible spectra show that the PTB7 chains were aligned parallel to the friction direction in the blend films. Grazing-incidence X-ray diffraction (GIXD) studies with synchrotron radiation suggested that the preferred orientation of PTB7 crystallites was face-on in the blend films. The GIXD results also showed the high uniaxial orientation of PTB7 chains in blend films. Photovoltaic devices were fabricated using the friction-transferred blend films of the PTB7 and PC71BM. These bulk heterojunction devices showed better performance than planar heterojunction devices fabricated using pure friction-transferred PTB7 films.

Methods for fabricating thin film III-V compound solar cell

DOEpatents

Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

2011-08-09

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Synthesis and characterization of lithium intercalation electrodes based on iron oxide thin films

NASA Astrophysics Data System (ADS)

Sarradin, J.; Guessous, A.; Ribes, M.

Sputter-deposited iron oxide thin films are investigated as a possible negative electrode for rocking-chair microbatteries. Experimental conditions related to the manufacturing of amorphous thin films suitable to a large number of available intercalation sites are described. Structural and physical properties of the thin layer films are presented. The conductivities of the amorphous thin films were found to be very high compared with those of the respective crystalline forms. Regarding the electrochemical behaviour, Fe 2O 3-based thin films electrodes are able to store and reversibly exchange lithium ions. At a C/2 charge/discharge rate with 100% depth-of-discharge (DOD), the specific capacity of these amorphous thin film electrodes remains almost constant and close to 330 Ah/kg after more than 120 charge/discharge cycles.

Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

NASA Astrophysics Data System (ADS)

Khamseh, S.; Araghi, H.; Ghahari, M.; Faghihi Sani, M. A.

2016-03-01

W-doped VO2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VOX-WOX-VOX ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO2 (M) and VO2 (B) was formed in VOX-WOX-VOX ceramic thin films. Tungsten content of VOX-WOX-VOX ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance ( R sq) of VOX-WOX-VOX ceramic thin films increased from 65 to 86 kΩ/sq. The VOX-WOX-VOX ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness.

Tunable Snell's law for spin waves in heterochiral magnetic films

NASA Astrophysics Data System (ADS)

Mulkers, Jeroen; Van Waeyenberge, Bartel; Milošević, Milorad V.

2018-03-01

Thin ferromagnetic films with an interfacially induced DMI exhibit nontrivial asymmetric dispersion relations that lead to unique and useful magnonic properties. Here we derive an analytical expression for the magnon propagation angle within the micromagnetic framework and show how the dispersion relation can be approximated with a comprehensible geometrical interpretation in the k space of the propagation of spin waves. We further explore the refraction of spin waves at DMI interfaces in heterochiral magnetic films, after deriving a generalized Snell's law tunable by an in-plane magnetic field, that yields analytical expressions for critical incident angles. The found asymmetric Brewster angles at interfaces of regions with different DMI strengths, adjustable by magnetic field, support the conclusion that heterochiral ferromagnetic structures are an ideal platform for versatile spin-wave guides.

pn-Heterojunction effects of perylene tetracarboxylic diimide derivatives on pentacene field-effect transistor.

PubMed

Yu, Seong Hun; Kang, Boseok; An, Gukil; Kim, BongSoo; Lee, Moo Hyung; Kang, Moon Sung; Kim, Hyunjung; Lee, Jung Heon; Lee, Shichoon; Cho, Kilwon; Lee, Jun Young; Cho, Jeong Ho

2015-01-28

We investigated the heterojunction effects of perylene tetracarboxylic diimide (PTCDI) derivatives on the pentacene-based field-effect transistors (FETs). Three PTCDI derivatives with different substituents were deposited onto pentacene layers and served as charge transfer dopants. The deposited PTCDI layer, which had a nominal thickness of a few layers, formed discontinuous patches on the pentacene layers and dramatically enhanced the hole mobility in the pentacene FET. Among the three PTCDI molecules tested, the octyl-substituted PTCDI, PTCDI-C8, provided the most efficient hole-doping characteristics (p-type) relative to the fluorophenyl-substituted PTCDIs, 4-FPEPTC and 2,4-FPEPTC. The organic heterojunction and doping characteristics were systematically investigated using atomic force microscopy, 2D grazing incidence X-ray diffraction studies, and ultraviolet photoelectron spectroscopy. PTCDI-C8, bearing octyl substituents, grew laterally on the pentacene layer (2D growth), whereas 2,4-FPEPTC, with fluorophenyl substituents, underwent 3D growth. The different growth modes resulted in different contact areas and relative orientations between the pentacene and PTCDI molecules, which significantly affected the doping efficiency of the deposited adlayer. The differences between the growth modes and the thin-film microstructures in the different PTCDI patches were attributed to a mismatch between the surface energies of the patches and the underlying pentacene layer. The film-morphology-dependent doping effects observed here offer practical guidelines for achieving more effective charge transfer doping in thin-film transistors.

Self-Limited Growth in Pentacene Thin Films

PubMed Central

2017-01-01

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought. PMID:28287698

Self-Limited Growth in Pentacene Thin Films.

PubMed

Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

2017-04-05

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

Controlled deposition of fullerene derivatives within a graphene template by means of a modified Langmuir-Schaefer method.

PubMed

Kouloumpis, Antonios; Vourdas, Nikolaos; Zygouri, Panagiota; Chalmpes, Nikolaos; Potsi, Georgia; Kostas, Vasilios; Spyrou, Konstantinos; Stathopoulos, Vassilis N; Gournis, Dimitrios; Rudolf, Petra

2018-04-12

The scientific and technological potential of graphene's includes the development of light, open 3D hybrid structures with high surface area, tunable pore size and aromatic functionalities. Towards this aim, we describe a scalable and low-cost bottom-up approach that combines self-assembly and Langmuir-Schaefer deposition for the production of fullerene-intercalated graphene oxide hybrids. This method uses graphene oxide (GO) nanosheets as template for the attachment of two types of fullerene derivatives (bromo-fullerenes, C 60 Br 24 and fullerols, C 60 (OH) 24 ) in a bi-dimensional arrangement, allowing a layer-by-layer growth with control at nanoscale. Our film preparation approach relies on a bottom-up process that includes the formation of a hybrid organo-graphene Langmuir film, which is transferred onto a substrate and then brought in contact with C 60 (OH) 24 molecules in solution to induce self-assembly. In the case of grafting C 60 Br 24 molecules into graphene a further modification of the GO platelets was performed by bringing the surface of the transferred GO Langmuir film in contact with a second amino surfactant solution. Repeating these deposition cycles, pillared structures were fabricated in thin films form. These fullerene-based hybrid thin films were characterized by Raman and X-ray photoelectron (XPS) spectroscopies, X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and contact angle measurements. Copyright © 2018 Elsevier Inc. All rights reserved.

Magneto-Optic Laser Beam Steering

DTIC Science & Technology

1975-10-01

Thin Substrates 16 1. Substrate Thinning 16 2. LPE on TMn Substrates 18 3. Statics of BRIG Crystal Films on Thin Substrates... 19 4. Results...6 Garnet Etch Rate 17 7 Thin Substrate: Film Both Sides 20 8 Thin Substrate: Film One Side 21 9 Film with Substrate Both Sides 23 10 Ratio...Robbins et al reported that iron garnet films could be grown on gallium garnet sub- strates by using a coprecipitated slurry. This technique was

Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.

PubMed

Wei, Yaowei; Pan, Feng; Zhang, Qinghua; Ma, Ping

2015-01-01

Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.

Synthesis and annealing study of RF sputtered ZnO thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu; Singhal, R.

2016-05-23

In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structuremore » of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.« less

Deposition and characterization of ZnSe nanocrystalline thin films

NASA Astrophysics Data System (ADS)

Temel, Sinan; Gökmen, F. Özge; Yaman, Elif; Nebi, Murat

2018-02-01

ZnSe nanocrystalline thin films were deposited at different deposition times by using the Chemical Bath Deposition (CBD) technique. Effects of deposition time on structural, morphological and optical properties of the obtained thin films were characterized. X-ray diffraction (XRD) analysis was used to study the structural properties of ZnSe nanocrystalline thin films. It was found that ZnSe thin films have a cubic structure with a preferentially orientation of (111). The calculated average grain size value was about 28-30 nm. The surface morphology of these films was studied by the Field Emission Scanning Electron Microscope (FESEM). The surfaces of the thin films were occurred from small stacks and nano-sized particles. The band gap values of the ZnSe nanocrystalline thin films were determined by UV-Visible absorption spectrum and the band gap values were found to be between 2.65-2.86 eV.

Band alignment measurements at heterojunction interfaces in layered thin film solar cells & thermoelectrics

NASA Astrophysics Data System (ADS)

Fang, Fang

2011-12-01

Public awareness of the increasing energy crisis and the related serious environmental concerns has led to a significantly growing demand for alternative clean and renewable energy resources. Thin film are widely applied in multiple renewable energy devices owing to the reduced amount of raw materials and increase flexibility of choosing from low-cost candidates, which translates directly into reduced capital cost. This is a key driving force to make renewable technology competitive in the energy market. This thesis is focused on the measurement of energy level alignments at interfaces of thin film structures for renewable energy applications. There are two primary foci: II -VI semiconductor ZnSe/ZnTe thin film solar cells and Bi2Te3/Sb2Te3 thin film structures for thermoelectric applications. In both cases, the electronic structure and energy band alignment at interfaces usually controls the carrier transport behavior and determines the quality of the device. High-resolution photoemission spectroscopy (lab-based XPS & synchrotron-based UPS) was used to investigate the chemical and electronic properties of epitaxial Bi2Te3 and Sb2Te3 thin films, in order to validate the anticipated band alignment at interfaces in Bi 2Te3/Sb2Te3 superlattices as one favoring electron-transmission. A simple, thorough two-step treatment of a chemical etching in dilute hydrochloric acid solution and a subsequent annealing at ˜150°C under ultra-high vacuum environment is established to remove the surface oxides completely. It is an essential step to ensure the measurements on electronic states are acquired on stoichimetric, oxide-free clean surface of Bi 2Te3 and Sb2Te3 films. The direct measurement of valence band offsets (VBO) at a real Sb 2Te3/Bi2Te3 interface is designed based on the Kraut model; a special stacking film structure is prepared intentionally: sufficiently thin Sb2Te3 film on top of Bi2Te 3 that photoelectrons from both of them are collected simultaneously. From a combination of core levels and valence band ultraviolet photoemission spectra of the bulk materials as well as the heterojunction (Sb2Te 3/Bi2Te3), the VBO at p-type Sb2Te 3 and n-type Bi2Te3 is determined as 0.04 +/- 0.10 eV. Such a small energy offset is within the same magnitude of the thermal energy of kT, at room temperature. The motivation for the II-VI ZnTe-based thin film solar cell derives from the need to identify and overcome performance-limiting properties related to the processing of film deposition using close space sublimation (CSS). Chemical and electronic properties of the CSS grown ZnTe/ZnSe films were studied in x-ray diffraction, scanning electron microscopy and photoemission spectroscopy. Specifically, Se oxide was observed on the ZnSe surface, the removal of this oxide generated apparent offsets in the valence band and hence the alignment at the heterojunction energy diagram. Processing steps to mitigate oxidation yielded the best cells. Film structure was studied on the dependence of growth time; physical film damage is found during the initial stages when depositing ZnTe on a grown ZnSe film. Preliminary studies of films grown by evaporation and their characterizations are presented at last. In this thesis, a better understanding of the electronic structure at interfaces is built in two different thin film devices, and the resulting band energy diagram of the corresponding devices offered effective feedback in materials and device.The problem of energy equilibrium in the human body has received a great deal.

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

Antimicrobial Activity of Thin Solid Films of Silver Doped Hydroxyapatite Prepared by Sol-Gel Method

PubMed Central

Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

2014-01-01

In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x Ag = 0.5 are effective against E. coli and S. aureus after 24 h. PMID:24523630

Properties of WO3-x Electrochromic Thin Film Prepared by Reactive Sputtering with Various Post Annealing Temperatures

NASA Astrophysics Data System (ADS)

Kim, Min Hong; Choi, Hyung Wook; Kim, Kyung Hwan

2013-11-01

The WO3-x thin films were prepared on indium tin oxide (ITO) coated glass at 0.7 oxygen flow ratio [O2/(Ar+O2)] using the facing targets sputtering (FTS) system at room temperature. In order to obtain the annealing effect, as-deposited thin films were annealed at temperatures of 100, 200, 300, 400, and 500 °C for 1 h in open air. The structural properties of the WO3-x thin film were measured using an X-ray diffractometer. The WO3-x thin films annealed at up to 300 °C indicated amorphous properties, while those annealed above 400 °C indicated crystalline properties. The electrochemical and optical properties of WO3-x thin films were measured using cyclic voltammetry and a UV/vis spectrometer. The maximum value of coloration efficiency obtained was 34.09 cm2/C for thin film annealed at 200 °C. The WO3-x thin film annealed at 200 °C showed superior electrochromic properties.

Antimicrobial activity of thin solid films of silver doped hydroxyapatite prepared by sol-gel method.

PubMed

Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

2014-01-01

In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x(Ag) = 0.5 are effective against E. coli and S. aureus after 24 h.

Electrochemical detection of nitrite on poly(pyronin Y)/graphene nanocomposites modified ITO substrate

NASA Astrophysics Data System (ADS)

Şinoforoğlu, Mehmet; Dağcı, Kader; Alanyalıoğlu, Murat; Meral, Kadem

2016-06-01

The present study reports on an easy preparation of poly(pyronin Y)/graphene (poly(PyY)/graphene) nanocomposites thin films on indium tin oxide coated glass substrates (ITO). The thin films of poly(PyY)/graphene nanocomposites are prepared by a novel method consisting of three steps; (i) preparation of graphene oxide (GO) thin films on ITO by spin-coating method, (ii) self-assembly of PyY molecules from aqueous solution onto the GO thin film, (iii) surface-confined electropolymerization (SCEP) of the adsorbed PyY molecules on the GO thin film. The as-prepared poly(PyY)/graphene nanocomposites thin films are characterized by using electroanalytical and spectroscopic techniques. Afterwards, the graphene-based polymeric dye thin film on ITO is used as an electrode in an electrochemical cell. Its performance is tested for electrochemical detection of nitrite. Under optimized conditions, the electrocatalytical effect of the nanocomposites thin film through electrochemical oxidation of nitrite is better than that of GO coated ITO.

Ultrahigh-Performance Cu2ZnSnS4 Thin Film and Its Application in Microscale Thin-Film Lithium-Ion Battery: Comparison with SnO2.

PubMed

Lin, Jie; Guo, Jianlai; Liu, Chang; Guo, Hang

2016-12-21

To develop a high-performance anode for thin-film lithium-ion batteries (TFBs, with a total thickness on the scale of micrometers), a Cu 2 ZnSnS 4 (CZTS) thin film is fabricated by magnetron sputtering and exhibits an ultrahigh performance of 950 mAh g -1 even after 500 cycles, which is the highest among the reported CZTS for lithium storage so far. The characterization and electrochemical tests reveal that the thin-film structure and additional reactions both contribute to the excellent properties. Furthermore, the microscale TFBs with effective footprints of 0.52 mm 2 utilizing the CZTS thin film as anode are manufactured by microfabrication techniques, showing superior capability than the analogous TFBs with the SnO 2 thin film as anode. This work demonstrates the advantages of exploiting thin-film electrodes and novel materials into micropower sources by electronic manufacture methods.

Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1

DTIC Science & Technology

2011-04-30

IGZO film on the performance of thin film transistors 5 Chapter 2. Hydrogenation of a- IGZO channel layer in the thin film transistors 12...effect of substrate temperature during the deposition of a- IGZO film on the performance of thin film transistors Introduction The effect of substrate...temperature during depositing IGZO channel layer on the performance of amorphous indium-gallium-zinc oxide (a- IGZO

Spectral and time-resolved properties of photoinduced hydroxyquinolines doped thin polymer films

NASA Astrophysics Data System (ADS)

Mehata, Mohan Singh

2018-01-01

Quinoline and its derivatives have a wide range of biological and pharmacological activities. Quinoline ring is used to design functional materials (quinoline derivatives) for OLEDs and field-induce electrooptics. It possesses antibacterial, antifungal, antimalarial, cardiotonic, anthelmintic, anti-inflammatory, anticonvulsant and analgesic activity. Here, we have examined photoexcitation dynamics of 6-hydroxyquinoline (6-HQ) doped in polymer films of polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA) and cellulose acetate (CA) at atmospheric conditions. The absorption maximum of 6-HQ in polymer films was observed at 333 ± 1 nm, whereas fluorescence (FL) maximum fell in the range of 365-371 nm. In PVA film, in addition to the typical FL, a band maximum at 432 nm appeared as a result of an excited-state intermolecular proton transfer (ESIPT) reaction facilitated in the hydrogen-bonded complex formed in the ground state between 6-HQ:PVA. The multi-exponential decay behavior of 6-HQ in all the three polymer films indicates a nanoscale heterogeneity of the polymer environments.

A comparison study of Co and Cu doped MgO diluted magnetic thin films

NASA Astrophysics Data System (ADS)

Sarıtaş, S.; ćakıcı, T.; Muǧlu, G. Merhan; Kundakcı, M.; Yıldırım, M.

2017-02-01

Transition metal-doped MgO diluted magnetic thin films are appropriate candidates for spintronic applications and designing magnetic devices and sensors. Therefore, MgO:Co and MgO:Cu films were deposited on glass substrates by Chemical Spray Pyrolysis (CSP) method different thin film deposition parameters. Deposited different transition metal doped MgO thin films were compared in terms of optic and structural properties. Comparison optic analysis of the films was investigated spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Comparison structural analysis of the thin films was examined by using XRD, Raman Analysis, SEM, EDX and AFM techniques. The transition metal-doped; MgO:Co and MgO:Cu thin films maybe have potential applications in spintronics and magnetic data storage.

Dynamics of liquid films exposed to high-frequency surface vibration

NASA Astrophysics Data System (ADS)

Manor, Ofer; Rezk, Amgad R.; Friend, James R.; Yeo, Leslie Y.

2015-05-01

We derive a generalized equation that governs the spreading of liquid films under high-frequency (MHz-order) substrate vibration in the form of propagating surface waves and show that this single relationship is universally sufficient to collectively describe the rich and diverse dynamic phenomena recently observed for the transport of oil films under such substrate excitation, in particular, Rayleigh surface acoustic waves. In contrast to low-frequency (Hz- to kHz-order) vibration-induced wetting phenomena, film spreading at such high frequencies arises from convective drift generated by the viscous periodic flow localized in a region characterized by the viscous penetration depth β-1≡(2μ /ρ ω ) 1 /2 adjacent to the substrate that is invoked directly by its vibration; μ and ρ are the viscosity and the density of the liquid, respectively, and ω is the excitation frequency. This convective drift is responsible for driving the spreading of thin films of thickness h ≪kl-1 , which spread self-similarly as t1 /4 along the direction of the drift corresponding to the propagation direction of the surface wave, kl being the wave number of the compressional acoustic wave that forms in the liquid due to leakage of the surface wave energy from the substrate into the liquid and t the time. Films of greater thicknesses h ˜kl-1≫β-1 , in contrast, are observed to spread with constant velocity but in a direction that opposes the drift and surface wave propagation due to the attenuation of the acoustic wave in the liquid. The universal equation derived allows for the collective prediction of the spreading of these thin and thick films in opposing directions.

Preparation and characterization of a poly (1, 4-phenylenevinylene) derivative-based hybrid thin film nanocomposites with enhanced performance

NASA Astrophysics Data System (ADS)

Belhaj, Marwa; Jemmeli, Dhouha; Dridi, Cherif; Ben Salem, Balkiss; Jaballah, Najmeddine; Majdoub, Mustapha; Yatskiv, Roman; Grym, Jan

2018-05-01

In this study, a poly (1, 4-phenylenevinylene) derivative (PPV-C6) was synthesized via Gilch polycondensation, and its electrochemical and optical characteristics were determined by cyclic voltammetry analysis, ultraviolet-visible, and photoluminescence spectroscopy. The polymer exhibited semiconductor behavior with an optical band gap of about 2.02 eV. Thin-film hybrid nanocomposites were prepared based on PPV-C6 with a large range of concentrations of sol-gel synthesized surfactant-free ZnO nanoparticles (n-ZnO). We investigated the photophysical properties of nanocomposites with different weight ratios of n-ZnO. The optical absorption spectra of PPV-C6: n-ZnO nanocomposites exhibited moderate variation in terms of the optical band gap energy with respect to the pristine polymer. Photoluminescence spectra indicated that the optimum n-ZnO concentration was about 50 wt% to achieve photoluminescence quenching, which corresponded to the most homogeneous surface and efficient charge transfer due to optimal exciton dissociation. We established good correlations between the investigated properties.

Synthesis of cobalt doped BiFeO3 multiferroic thin films on p-Si substrate by sol-gel method

NASA Astrophysics Data System (ADS)

Prasannakumara, R.; Shrisha, B. V.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and cobalt doped BiFeO3 (BiFe1-xCoxO3) nanostructure thin films were grown on p-silicon substrates by sol-gel spin coating method with a sequence of coating and annealing process. The post-annealing of the grown films was carried out under high pure argon atmosphere. The grown nanostructure thin films were characterized using XRD, FESEM, and AFM for the structural, morphological and topological studies, respectively. The elemental compositions of the samples were studied by EDX spectra. The PL spectra of the grown sample shows a narrow emission peak around 559 nm which corresponds to the energy band gap of BFO thin films. The XRD peaks of the BiFeO3 nanostructure thin film reveals the rhombohedral structure and transformed from rhombohedral to orthorhombic or tetragonal structure in Co doped BiFeO3 thin films. The Co substitution in BiFeO3 helped to obtain higher dense nanostructure thin films with smaller grain size than the BiFeO3 thin films.

Structural and electrical transport properties of La2Mo2O9 thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Paul, T.; Ghosh, A.

2017-04-01

We have studied the structure and electrical properties of La2Mo2O9 thin films of different thicknesses prepared by the laser deposition technique at different substrate temperatures. The structural properties of the thin films have been investigated using XRD, XPS, AFM, TEM, SEM, and Raman spectroscopy. The electrical transport properties of the thin films have been investigated in wide temperature and frequency ranges. The cubic nature of the thin films has been confirmed from structural analysis. An enhancement of the oxygen ion conductivity of the films up to five orders of magnitude is obtained compared to that of the bulk La2Mo2O9, suggesting usefulness of the thin films as electrolytes in micro-solid oxide fuel cells. The enhanced dc ionic conductivity of the thin films has been interpreted using the rule of the mixture model, while a power law model has been used to investigate the frequency and temperature dependences of the conductivity. The analysis of the results predicts the three-dimensional oxygen ion conduction in the thin films.

Thin film bismuth iron oxides useful for piezoelectric devices

DOEpatents

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

2016-05-31

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

Applications of Thin Film Thermocouples for Surface Temperature Measurement

NASA Technical Reports Server (NTRS)

Martin, Lisa C.; Holanda, Raymond

1994-01-01

Thin film thermocouples provide a minimally intrusive means of measuring surface temperature in hostile, high temperature environments. Unlike wire thermocouples, thin films do not necessitate any machining of the surface, therefore leaving intact its structural integrity. Thin films are many orders of magnitude thinner than wire, resulting in less disruption to the gas flow and thermal patterns that exist in the operating environment. Thin film thermocouples have been developed for surface temperature measurement on a variety of engine materials. The sensors are fabricated in the NASA Lewis Research Center's Thin Film Sensor Lab, which is a class 1000 clean room. The thermocouples are platinum-13 percent rhodium versus platinum and are fabricated by the sputtering process. Thin film-to-leadwire connections are made using the parallel-gap welding process. Thermocouples have been developed for use on superalloys, ceramics and ceramic composites, and intermetallics. Some applications of thin film thermocouples are: temperature measurement of space shuttle main engine turbine blade materials, temperature measurement in gas turbine engine testing of advanced materials, and temperature and heat flux measurements in a diesel engine. Fabrication of thin film thermocouples is described. Sensor durability, drift rate, and maximum temperature capabilities are addressed.

Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahoo, Trilochan; Ju, Jin-Woo; Kannan, V.

2008-03-04

Single crystalline ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate, using two different precursors by hydrothermal route at a temperature of 90 deg. C were successfully grown. The effect of starting precursor on crystalline nature, surface morphology and optical emission of the films were studied. ZnO thin films were grown in aqueous solution of zinc acetate and zinc nitrate. X-ray diffraction analysis revealed that all the thin films were single crystalline in nature and exhibited wurtzite symmetry and c-axis orientation. The thin films obtained with zinc nitrate had a more pitted rough surface morphology compared to the filmmore » grown in zinc acetate. However the thickness of the films remained unaffected by the nature of the starting precursor. Sharp luminescence peaks were observed from the thin films almost at identical energies but deep level emission was slightly prominent for the thin film grown in zinc nitrate.« less

The uniformity study of non-oxide thin film at device level using electron energy loss spectroscopy

NASA Astrophysics Data System (ADS)

Li, Zhi-Peng; Zheng, Yuankai; Li, Shaoping; Wang, Haifeng

2018-05-01

Electron energy loss spectroscopy (EELS) has been widely used as a chemical analysis technique to characterize materials chemical properties, such as element valence states, atoms/ions bonding environment. This study provides a new method to characterize physical properties (i.e., film uniformity, grain orientations) of non-oxide thin films in the magnetic device by using EELS microanalysis on scanning transmission electron microscope. This method is based on analyzing white line ratio of spectra and related extended energy loss fine structures so as to correlate it with thin film uniformity. This new approach can provide an effective and sensitive method to monitor/characterize thin film quality (i.e., uniformity) at atomic level for thin film development, which is especially useful for examining ultra-thin films (i.e., several nanometers) or embedded films in devices for industry applications. More importantly, this technique enables development of quantitative characterization of thin film uniformity and it would be a remarkably useful technique for examining various types of devices for industrial applications.

Characterization of high-{kappa} LaLuO{sub 3} thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Shu; Huang Sen; Chen Hongwei

2011-10-31

We report the study of high-dielectric-constant (high-{kappa}) dielectric LaLuO{sub 3} (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN heterostrucure have been investigated with atomic force microscopy, x-ray photoelectron spectroscopy, and TEM. It is revealed that the MBD-grown 16 nm-thick LLO film is polycrystalline with a thin ({approx}2 nm) amorphous transition layer at the LLO/GaN interface. The bandgap of LLO is derived as 5.3 {+-} 0.04 eV from O1s energy loss spectrum. Capacitance-voltage (C-V) characteristics of a Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode exhibit small frequency dispersion (<2%) and reveal amore » high effective dielectric constant of {approx}28 for the LLO film. The LLO layer is shown to be effective in suppressing the reverse and forward leakage current in the MIS diode. In particular, the MIS diode forward current is reduced by 7 orders of magnitude at a forward bias of 1 V compared to a conventional Ni-Au/III-nitride Schottky diode.« less

Investigation of the structural, surface, optical and electrical properties of the Indium doped CuxO thin films deposited by a thermionic vacuum arc

NASA Astrophysics Data System (ADS)

Musaoğlu, Caner; Pat, Suat; Özen, Soner; Korkmaz, Şadan; Mohammadigharehbagh, Reza

2018-03-01

In this study, investigation of some physical properties of In-doped CuxO thin films onto amorphous glass substrates were done. The thin films were depsoied by thermionic vacuum arc technique (TVA). TVA technique gives a thin film with lower precursor impurity according to the other chemical and physical depsoition methods. The microstructural properties of the produced thin films was determined by x-ray diffraction device (XRD). The thickness values were measured as to be 30 nm and 60 nm, respectively. The miller indices of the thin films’ crystalline planes were determined as to be Cu (111), CuO (\\bar{1} 12), CuInO2 (107) and Cu2O (200), Cu (111), CuO (\\bar{1} 12), CuO (\\bar{2} 02), CuInO2 (015) for sample C1 and C2, respectively. The produced In-doped CuO thin films are in polycrystalline structure. The surface properties of produced In doped CuO thin films were determined by using an atomic force microscope (AFM) and field emission scanning electron microscope (FESEM) tools. The optical properties of the In doped CuO thin films were determined by UV–vis spectrophotometer, interferometer, and photoluminescence devices. p-type semiconductor thin film was obtained by TVA depsoition.

Linking Precursor Alterations to Nanoscale Structure and Optical Transparency in Polymer Assisted Fast-Rate Dip-Coating of Vanadium Oxide Thin Films

PubMed Central

Glynn, Colm; Creedon, Donal; Geaney, Hugh; Armstrong, Eileen; Collins, Timothy; Morris, Michael A.; Dwyer, Colm O’

2015-01-01

Solution processed metal oxide thin films are important for modern optoelectronic devices ranging from thin film transistors to photovoltaics and for functional optical coatings. Solution processed techniques such as dip-coating, allow thin films to be rapidly deposited over a large range of surfaces including curved, flexible or plastic substrates without extensive processing of comparative vapour or physical deposition methods. To increase the effectiveness and versatility of dip-coated thin films, alterations to commonly used precursors can be made that facilitate controlled thin film deposition. The effects of polymer assisted deposition and changes in solvent-alkoxide dilution on the morphology, structure, optoelectronic properties and crystallinity of vanadium pentoxide thin films was studied using a dip-coating method using a substrate withdrawal speed within the fast-rate draining regime. The formation of sub-100 nm thin films could be achieved rapidly from dilute alkoxide based precursor solutions with high optical transmission in the visible, linked to the phase and film structure. The effects of the polymer addition was shown to change the crystallized vanadium pentoxide thin films from a granular surface structure to a polycrystalline structure composed of a high density of smaller in-plane grains, resulting in a uniform surface morphology with lower thickness and roughness. PMID:26123117

Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

NASA Astrophysics Data System (ADS)

Jilani, Asim; Abdel-wahab, M. Sh; Al-ghamdi, Attieh A.; Dahlan, Ammar sadik; Yahia, I. S.

2016-01-01

The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ(3) was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

Thin-Film Thermocouple Technology Demonstrated for Reliable Heat Transfer Measurements

NASA Technical Reports Server (NTRS)

1996-01-01

Exploratory work is in progress to apply thin-film thermocouples to localized heat transfer measurements on turbine engine vanes and blades. The emerging thin-film thermocouple technology shows great potential to improve the accuracy of local heat transfer measurements. To verify and master the experimental methodology of thin-film thermocouples, the NASA Lewis Research Center conducted a proof-of-concept experiment in a controlled environment before applying the thin-film sensors to turbine tests.

Scientific Understanding of Non-Chromated Corrosion Inhibitors Function

DTIC Science & Technology

2013-01-01

deposited Al - Cu thin films (left) and aged Al - Cu thin films (right). 348 Figure 7.8. Pit morphologies developed...under neat epoxy resins applied to “as- deposited ” (left) and aged Al - Cu thin films (right) at different exposure times. 349 Figure 7.9. SEM and EDS...results of “As- deposited ” Al - Cu thin film. 351 Figure 7.10. SEM and EDS results of aged Al - Cu thin films. 352 Figure 7.11. Pit

Piezoelectric thin films and their applications for electronics

NASA Astrophysics Data System (ADS)

Yoshino, Yukio

2009-03-01

ZnO and AlN piezoelectric thin films have been studied for applications in bulk acoustic wave (BAW) resonator. This article introduces methods of forming ZnO and AlN piezoelectric thin films by radio frequency sputtering and applications of BAW resonators considering the relationship between the crystallinity of piezoelectric thin films and the characteristics of the BAW resonators. Using ZnO thin films, BAW resonators were fabricated for a contour mode at 3.58 MHz and thickness modes from 200 MHz to 5 GHz. The ZnO thin films were combined with various materials, substrates, and thin films to minimize the temperature coefficient of frequency (TCF). The minimum TCF of BAW resonators was approximately 2 ppm/°C in the range -20 to 80 °C. The electromechanical coupling coefficient (k2) in a 1.9 GHz BAW resonator was 6.9%. Using AlN thin films, 5-20 GHz BAW resonators with an ultrathin membrane were realized. The membrane thickness of a 20 GHz BAW resonator was about 200 nm, k2 was 6.1%, and the quality factor (Q) was about 280. Q decreased with increasing resonant frequency. The value of k2 is almost the same for 5-20 GHz resonators. This result could be obtained by improving the thickness uniformity, by controlling internal stress of thin films, and by controlling the crystallinity of AlN piezoelectric thin film.

Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor

NASA Astrophysics Data System (ADS)

Kwon, Dae Woong; Kim, Jang Hyun; Chang, Ji Soo; Kim, Sang Wan; Sun, Min-Chul; Kim, Garam; Kim, Hyun Woo; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Jung, U. In; Park, Byung-Gook

2010-11-01

A comprehensive study is done regarding stabilities under simultaneous stress of light and dc-bias in amorphous hafnium-indium-zinc-oxide thin film transistors. The positive threshold voltage (Vth) shift is observed after negative gate bias and light stress, and it is completely different from widely accepted phenomenon which explains that negative-bias stress results in Vth shift in the left direction by bias-induced hole-trapping. Gate current measurement is performed to explain the unusual positive Vth shift under simultaneous application of light and negative gate bias. As a result, it is clearly found that the positive Vth shift is derived from electron injection from gate electrode to gate insulator.

Connecting quantum dots and bionanoparticles in hybrid nanoscale ultra-thin films

NASA Astrophysics Data System (ADS)

Tangirala, Ravisubhash; Hu, Yunxia; Zhang, Qingling; He, Jinbo; Russell, Thomas; Emrick, Todd

2008-03-01

Aldehyde-functionalized CdSe quantum dots and nanorods, and horse spleen ferritin bionanoparticles, were co-assembled at an oil-water interface. Reaction of the aldehydes with the surface-available amines on the ferritin particles enabled cross-linking at the interface, converting the assembled nanoparticles into robust ultra-thin films. The cross-linked capsules and sheets thus made by aldehyde-amine conjugation could be disrupted by addition of acid. Reductive amination chemistry could be performed to convert these degradable capsules and sheets into structures with irreversible cross-linking. Fluorescence confocal microscopy, scanning force microscopy and pendant drop tensiometry were used to characterize these hybrid nanoparticle-based materials, and transmission electron microscopy (TEM) confirmed the presence of both the synthetic and naturally derived nanoparticles.

Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

PubMed Central

Skuza, J. R.; Scott, D. W.; Mundle, R. M.; Pradhan, A. K.

2016-01-01

We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5–10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT. PMID:26884225

Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

NASA Astrophysics Data System (ADS)

Cheemadan, Saheer; Santhosh Kumar, M. C.

2018-04-01

Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

Method and system for constructing a rechargeable battery and battery structures formed with the method

DOEpatents

Hobson, David O.; Snyder, Jr., William B.

1995-01-01

A method and system for manufacturing a thin-film battery and a battery structure formed with the method utilizes a plurality of deposition stations at which thin battery component films are built up in sequence upon a web-like substrate as the substrate is automatically moved through the stations. At an initial station, cathode and anode current collector film sections are deposited upon the substrate, and at another station, a thin cathode film is deposited upon the substrate so to overlie part of the cathode current collector section. At another station, a thin electrolyte film is deposited upon so as to overlie the cathode film and part of the anode current collector film, at yet another station, a thin lithium film is deposited upon so as to overlie the electrolyte film and an additional part of the anode current collector film. Such a method accommodates the winding of a layup of battery components into a spiral configuration to provide a thin-film, high capacity battery and also accommodates the build up of thin film battery components onto a substrate surface having any of a number of shapes.

Research progress of VO2 thin film as laser protecting material

NASA Astrophysics Data System (ADS)

Liu, Zhiwei; Lu, Yuan; Hou, Dianxin

2018-03-01

With the development of laser technology, the battlefield threat of directional laser weapons is becoming more and more serious. The blinding and destruction caused by laser weapons on the photoelectric equipment is an important part of the current photo-electronic warfare. The research on the defense technology of directional laser weapons based on the phase transition characteristics of VO2 thin films is an important subject. The researches of VO2 thin films are summarized based on review these points: the preparation methods of VO2 thin films, phase transition mechanism, phase transition temperature regulating, interaction between VO2 thin films and laser, and the application prospect of vo2 thin film as laser protecting material. This paper has some guiding significance for further research on the VO2 thin films in the field of defense directional laser weapons.

Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

NASA Astrophysics Data System (ADS)

Chen, Feng

Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor Depositions (CVD) of many oxide thin films including ferroelectric and high dielectric constant BaTiO3, SrTiO 3 and PbTiO3 films had been carried out under reduced pressure (30 torr--80 torr) using liquid precursors containing beta-diketone ligands. The relative reactivities of Ba(beta-diketonate)2, Sr(beta-diketonate) 2, Pb(beta-diketonate)2, Ti(beta-diketonate)3, TiO(beta-diketonate)2 and Ti(OiPr)2(beta-diketonate) 2 had been studied individually prior to the deposition of BaTiO 3, SrTiO3 and PbTiO3 thin films from the mixtures of corresponding precursors. By using multi-step deposition method, carbon free stoichiometric BaTiO3 thin films uniform in large area have been achieved.

Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

NASA Astrophysics Data System (ADS)

Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Okuhata, Ryo; Ishibe, Takafumi; Watanabe, Kentaro; Suzuki, Takeyuki; Fujita, Takeshi; Sawano, Kentarou; Nakamura, Yoshiaki

2017-05-01

We have investigated the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus (P) doping. Epitaxial β-FeSi2 thin films with single phase were grown on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system: solid-phase epitaxy (SPE), where iron silicide films formed by codeposition of Fe and Si at room temperature were recrystallized by annealing at 530°C to form epitaxial β-FeSi2 thin films on Si(111) substrates, and MBE of β-FeSi2 thin films on epitaxial β-FeSi2 templates formed on Si(111) by reactive deposition epitaxy (RDE) at 530°C (RDE + MBE). Epitaxial SPE thin films based on codeposition had a flatter surface and more abrupt β-FeSi2/Si(111) interface than epitaxial RDE + MBE thin films. We investigated the intrinsic thermoelectric properties of the epitaxial β-FeSi2 thin films on Si(111), revealing lower thermal conductivity and higher electrical conductivity compared with bulk β-FeSi2. We also investigated the impact of doping on the Seebeck coefficient of bulk and thin-film β-FeSi2. A route to enhance the thermoelectric performance of β-FeSi2 is proposed, based on (1) fabrication of thin-film structures for high electrical conductivity and low thermal conductivity, and (2) proper choice of doping for high Seebeck coefficient.

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn; State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000; Zhang, Yanmin

2013-11-14

Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructuremore » after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.« less

Improving the optoelectronic properties of titanium-doped indium tin oxide thin films

NASA Astrophysics Data System (ADS)

Taha, Hatem; Jiang, Zhong-Tao; Henry, David J.; Amri, Amun; Yin, Chun-Yang; Mahbubur Rahman, M.

2017-06-01

The focus of this study is on a sol-gel method combined with spin-coating to prepare high-quality transparent conducting oxide (TCO) films. The structural, morphological, optical and electrical properties of sol-gel-derived pure and Ti-doped indium tin oxide (ITO) thin films were studied as a function of the concentration of the Ti (i.e. 0 at%, 2 at% and 4 at%) and annealing temperatures (150 °C-600 °C). FESEM measurements indicate that all the films are ˜350 nm thick. XRD analysis confirmed the cubic bixbyite structure of the polycrystalline indium oxide phase for all of the thin films. Increasing the Ti ratio, as well as the annealing temperature, improved the crystallinity of the films. Highly crystalline structures were obtained at 500 °C, with average grain sizes of about 50, 65 and 80 nm for Ti doping of 0 at%, 2 at% and 4 at%, respectively. The electrical and optical properties improved as the annealing temperature increased, with an enlarged electronic energy band gap and an optical absorption edge below 280 nm. In particular, the optical transmittance and electrical resistivity of the samples with a 4 at% Ti content improved from 87% and 7.10 × 10-4 Ω.cm to 92% and 1.6 × 10-4 Ω.cm, respectively. The conductivity, especially for the annealing temperature at 150 °C, is acceptable for many applications such as flexible electronics. These results demonstrate that unlike the more expensive and complex vacuum sputtering process, high-quality Ti-doped ITO films can be achieved by fast processing, simple wet-chemistry, and easy doping level control with the possibility of producing films with high scalability.

Singlet Fission and Excimer Formation in Disordered Solids of Alkyl-Substituted 1,3-Diphenylisobenzofurans

DOE PAGES

Dron, Paul I.; Michl, Josef; Johnson, Justin C.

2017-10-16

Here, we describe the preparation and excited state dynamics of three alkyl derivatives of 1,3-diphenylisobenzofuran (1) in both solutions and thin films. The substitutions are intended to disrupt the slip-stacked packing observed in crystals of 1 while maintaining the favorable energies of singlet and triplet for singlet fission (SF). All substitutions result in films that are largely amorphous as judged by the absence of strong X-ray diffraction peaks.

Temperature Behavior of Thin Film Varactor

DTIC Science & Technology

2012-01-01

Temperature Behavior of Thin Film Varactor By Richard X. Fu ARL-TR-5905 January 2012...Thin Film Varactor Richard X. Fu Sensors and Electron Devices Directorate, ARL...DD-MM-YYYY) January 2012 2. REPORT TYPE Final 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Temperature Behavior of Thin Film Varactor 5a

Quantitative image analysis for evaluating the abrasion resistance of nanoporous silica films on glass

PubMed Central

Nielsen, Karsten H.; Karlsson, Stefan; Limbach, Rene; Wondraczek, Lothar

2015-01-01

The abrasion resistance of coated glass surfaces is an important parameter for judging lifetime performance, but practical testing procedures remain overly simplistic and do often not allow for direct conclusions on real-world degradation. Here, we combine quantitative two-dimensional image analysis and mechanical abrasion into a facile tool for probing the abrasion resistance of anti-reflective (AR) coatings. We determine variations in the average coated area, during and after controlled abrasion. Through comparison with other experimental techniques, we show that this method provides a practical, rapid and versatile tool for the evaluation of the abrasion resistance of sol-gel-derived thin films on glass. The method yields informative data, which correlates with measurements of diffuse reflectance and is further supported by qualitative investigations through scanning electron microscopy. In particular, the method directly addresses degradation of coating performance, i.e., the gradual areal loss of antireflective functionality. As an exemplary subject, we studied the abrasion resistance of state-of-the-art nanoporous SiO2 thin films which were derived from 5–6 wt% aqueous solutions of potassium silicates, or from colloidal suspensions of SiO2 nanoparticles. It is shown how abrasion resistance is governed by coating density and film adhesion, defining the trade-off between optimal AR performance and acceptable mechanical performance. PMID:26656260

New Insight into Nuclear Reactions in Solids

NASA Astrophysics Data System (ADS)

Miley, George H.

2003-04-01

Earlier work by the author disclosed evidence for nuclear transmutations in multi-layer thin-film Ni/Pd electrodes loaded to a high ratio of hydrogen/film metal using an electrolytic technique [1]. Non-natural isotopes abundances were found for select products. A distinctive characteristic of this and similar experiments by others is a product yield curve vs. mass with four high yield peaks distributed between low and high masses. Attempts to explain this observation have evolved around the original swimming electron layer (SEL) theory [2]. In addition, CR-39 track detector measurements have revealed low-level emission of 1.6 MeV protons and 16 MeV alpha particles from the front face of the thin film electrodes during runs [3]. Most recently Mitsubishi Corp. researchers have reported a real-time transmutation measurement using built-in XPS diagnostics where a surface layer of Sr-88 was transmuted into Mo-96 over a 200 hour run period during the diffusion of deuterium through a multi-layer thin-film Pd/CaO substrate [4]. Likewise in a companion experiment, Cs-133 was transmuted into Pr-141. These products exhibit a large deviation from natural isotopic abundance, and the characteristic signature is a mass change of 8 and charge change of 4. These various phenomena along with a preliminary theory involving SEL and orbital mixing will be presented. The objective is to provide a unified understanding of both types of experiments presented in Refs. 1 and 3. [1] G.H. Miley and J. A. Patterson, "Nuclear Transmutations in Thin-Film Nickel Coatings Undergoing Electrolysis," J. New Energy, 1, 3, 5-30 (1996). [2] H. Hora, et al., "Screening in Cold Fusion Derived from D D Reactions," Physics Ltrs. A, 175, 138-143, (1993). [3] A. Lipson, et al., "In-situ long - range alpha particles and X-ray detection in Pd thin film-cathodes during electrolysis in, Li2SO4/H2O, Bult. APS, 47, 1,Pt. II, 1219, Indianapolis, (2002). [4] Y. Iwamura, T. Itoh, et al., "Low energy nuclear reaction induced by D gas permeation through multilayer film," Japanese J. Physics, 41, pt. 1, 7A, 4642, (2002).

Structural and Solar Cell Properties of a Ag-Containing Cu2ZnSnS4 Thin Film Derived from Spray Pyrolysis.

PubMed

Nguyen, Thi Hiep; Kawaguchi, Takato; Chantana, Jakapan; Minemoto, Takashi; Harada, Takashi; Nakanishi, Shuji; Ikeda, Shigeru

2018-02-14

A silver (Ag)-incorporated kesterite Cu 2 ZnSnS 4 (CZTS) thin film was fabricated by a facile spray pyrolysis method. Crystallographic analyses indicated successful incorporation of various amounts of Ag up to a Ag/(Ag + Cu) ratio of ca. 0.1 into the crystal lattice of CZTS in a homogeneous manner without formation of other impurity compounds. From the results of morphological investigations, Ag-incorporated films had larger crystal grains than the CZTS film. The sample with a relatively low Ag content (Ag/(Ag + Cu) of ca. 0.02) had a compact morphology without appreciable voids and pinholes. However, an increase in the Ag content in the CZTS film (Ag/(Ag + Cu) ca. 0.10) induced the formation of a large number of pinholes. As can be expected from these morphological properties, the best sunlight conversion efficiency was obtained by the solar cell based on the film with Ag/(Ag + Cu) of ca. 0.02. Electrostructural analyses of the devices suggested that the Ag-incorporated film in the device achieved reduction in the amounts of unfavorable copper on zinc antisite defects compared to the bare CZTS film. Moreover, the use of a Ag-incorporated film improved band alignment at the CdS(buffer)-CZTS interface. These alterations should also contribute to enhancement of device properties.

Electronic Devices Based on Oxide Thin Films Fabricated by Fiber-to-Film Process.

PubMed

Meng, You; Liu, Ao; Guo, Zidong; Liu, Guoxia; Shin, Byoungchul; Noh, Yong-Young; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

2018-05-30

Technical development for thin-film fabrication is essential for emerging metal-oxide (MO) electronics. Although impressive progress has been achieved in fabricating MO thin films, the challenges still remain. Here, we report a versatile and general thermal-induced nanomelting technique for fabricating MO thin films from the fiber networks, briefly called fiber-to-film (FTF) process. The high quality of the FTF-processed MO thin films was confirmed by various investigations. The FTF process is generally applicable to numerous technologically relevant MO thin films, including semiconducting thin films (e.g., In 2 O 3 , InZnO, and InZrZnO), conducting thin films (e.g., InSnO), and insulating thin films (e.g., AlO x ). By optimizing the fabrication process, In 2 O 3 /AlO x thin-film transistors (TFTs) were successfully integrated by fully FTF processes. High-performance TFT was achieved with an average mobility of ∼25 cm 2 /(Vs), an on/off current ratio of ∼10 7 , a threshold voltage of ∼1 V, and a device yield of 100%. As a proof of concept, one-transistor-driven pixel circuit was constructed, which exhibited high controllability over the light-emitting diodes. Logic gates based on fully FTF-processed In 2 O 3 /AlO x TFTs were further realized, which exhibited good dynamic logic responses and voltage amplification by a factor of ∼4. The FTF technique presented here offers great potential in large-area and low-cost manufacturing for flexible oxide electronics.

Perpendicular magnetic anisotropy in Mn2VIn (001) films: An ab initio study

NASA Astrophysics Data System (ADS)

Zipporah, Muthui; Robinson, Musembi; Julius, Mwabora; Arti, Kashyap

2018-05-01

First principles study of the magnetic anisotropy of Mn2VIn (001) films show perpendicular magnetic anisotropy (PMA), which increases as a function of the thickness of the film. Density functional theory (DFT) as implemented in the Vienna Ab initio simulation package (VASP) is employed here to perform a comprehensive theoretical investigation of the structural, electronic and magnetic properties of the Mn2VIn(001) films of varying thickness. Our calculations were performed on fully relaxed structures, with five to seventeen mono layers (ML). The degree of spin polarization is higher in the (001) Mn2VIn thin films as compared to the bulk in contrast to what is usually the case and as in Mn2VAl, which is isoelectronic to Mn2VIn as well as inCo2VIn (001) films studied for comparison. Tetragonal distortions are found in all the systems after relaxation. The distortion in the Mn2VIn system persists even for the 17ML thin film, resulting in PMA in the Mn2VIn system. This significant finding has potential to contribute to spin transfer torque (STT) and magnetic random access memory MRAM applications, as materials with PMA derived from volume magnetocrystalline anisotropy are being proposed as ideal magnetic electrodes.

Studies on RF sputtered (WO3)1-x (V2O5)x thin films for smart window applications

NASA Astrophysics Data System (ADS)

Meenakshi, M.; Sivakumar, R.; Perumal, P.; Sanjeeviraja, C.

2016-05-01

V2O5 doped WO3 targets for RF sputtering thin film deposition were prepared for various compositions. Thin films of (WO3)1-x (V2O5)x were deposited on to glass substrates using these targets. Structural characteristics of the prepared targets and thin films were studied using X-ray diffraction. Laser Raman studies were carried out on the thin films to confirm the compound formation.

Application Of Positron Beams For The Characterization Of Nano-scale Pores In Thin Films

NASA Astrophysics Data System (ADS)

Hirata, K.; Ito, K.; Kobayashi, Y.; Suzuki, R.; Ohdaira, T.; Eijt, S. W. H.; Schut, H.; van Veen, A.

2003-08-01

We applied three positron annihilation techniques, positron 3γ-annihilation spectroscopy, positron annihilation lifetime spectroscopy, and angular correlation of annihilation radiation, to the characterization of nano-scale pores in thin films by combining them with variable-energy positron beams. Characterization of pores in thin films is an important part of the research on various thin films of industrial importance. The results of our recent studies on pore characterization of thin films by positron beams will be reported here.

Characterization of aluminum selenide bi-layer thin film

NASA Astrophysics Data System (ADS)

Boolchandani, Sarita; Soni, Gyanesh; Srivastava, Subodh; Vijay, Y. K.

2018-05-01

The Aluminum Selenide (AlSe) bi-layer thin films were grown on glass substrate using thermal evaporation method under high vacuum condition. The morphological characterization was done using SEM. Electrical measurement with temperature variation shows that thin films exhibit the semiconductor nature. The optical properties of prepared thin films have also been characterized by UV-VIS spectroscopy measurements. The band gap of composite thin films has been calculated by Tauc's relation at different temperature ranging 35°C-100°C.

Investigation of phase transition properties of ZrO2 thin films

NASA Astrophysics Data System (ADS)

Kumar, Davinder; Singh, Avtar; Kaur, Manpreet; Rana, Vikrant Singh; Kaur, Raminder

2018-05-01

This paper presents the synthesis of transparent thin films of zirconium oxide (ZrO2) deposited on glass substrates by sol-gel dip coating technique. Synthesized films were characterized for different annealing time and withdrawal speed. Change in crystallographic properties of thin films was investigated by using X-ray diffraction. Surface morphology of transparent thin films was estimated by using scanning electron microscope.

Consequence of oxidant concentration on XPS properties of chemically synthesized polythiophene thin films

NASA Astrophysics Data System (ADS)

Kamat, Sandip V.; Chhabra, Jasvinder; Patil, V. S.; Yadav, J. B.; Puri, R. K.; Puri, Vijaya

2018-05-01

The polythiophene thin films were prepared by a wellknown chemical bath deposition technique. The deposited thin films were characterized for structural morphological properties and the adhesion of these thin films were measured by direct pull off (DPO) method, the effect of oxidant concentration on these thin films also studied. The FTIR spectra of chemically deposited polythiophene thin films shows the absorption peak at 836 cm-1 which represents c-s stretching vibrations, shifts to 869 cm-1 as the oxidant concentration increases. The band at 666 cm-1 representing c-s-c ring deformation becomes sharper and appears with a shoulder peak due to increase in oxidant concentration.

Methods of making non-covalently bonded carbon-titania nanocomposite thin films and applications of the same

DOEpatents

Liang, Yu Teng; Vijayan, Baiju K.; Gray, Kimberly A.; Hersam, Mark C.

2016-07-19

In one aspect, a method of making non-covalently bonded carbon-titania nanocomposite thin films includes: forming a carbon-based ink; forming a titania (TiO.sub.2) solution; blade-coating a mechanical mixture of the carbon-based ink and the titania solution onto a substrate; and annealing the blade-coated substrate at a first temperature for a first period of time to obtain the carbon-based titania nanocomposite thin films. In certain embodiments, the carbon-based titania nanocomposite thin films may include solvent-exfoliated graphene titania (SEG-TiO.sub.2) nanocomposite thin films, or single walled carbon nanotube titania (SWCNT-TiO.sub.2) nanocomposite thin films.

Studying Structural, Optical, Electrical, and Sensing Properties of Nanocrystalline SnO2:Cu Films Prepared by Sol-Gel Method for CO Gas Sensor Application at Low Temperature

NASA Astrophysics Data System (ADS)

Al-Jawad, Selma M. H.; Elttayf, Abdulhussain K.; Saber, Amel S.

Nanocrystalline SnO2 and SnO2:Cu thin films derived from SnCl2ṡ2H2O precursors have been prepared on glass substrates using sol-gel dip-coating technique. The deposited film was 300±20nm thick and the films were annealed in air at 500∘C for 1h. Structural, optical and sensing properties of the films were studied under different preparation conditions, such as Cu-doping concentration of 2%, 4% and 6wt.%. X-ray diffraction studies show the polycrystalline nature with tetragonal rutile structure of SnO2 and Cu:SnO2 thin films. The films have highly preferred orientation along (110). The crystallite size of the prepared samples reduced with increasing Cu-doping concentrations and the addition of Cu as dopants changed the structural properties of the thin films. Surface morphology was determined through scanning electron microscopy and atomic force microscopy. Results show that the particle size decreased as doping concentration increased. The films have moderate optical transmission (up to 82.4% at 800nm), and the transmittance, absorption coefficient and energy gap at different Cu-doping concentration were measured and calculated. Results show that Cu-doping decreased the transmittance and energy gap whereas it increased the absorption coefficient. Two peaks were noted with Cu-doping concentration of 0-6wt.%; the first peak was positioned exactly at 320nm ultraviolet emission and the second was positioned at 430-480nm. Moreover, emission bands were noticed in the photoluminescence spectra of Cu:SnO2. The electrical properties of SnO2 films include DC electrical conductivity, showing that the films have two activation energies, namely, Ea1 and Ea2, which increase as Cu-doping concentration increases. Cudoped nanocrystalline SnO2 gas-sensing material has better sensitivity to CO gas compared with pure SnO2.

Effect of Doping Materials on the Low-Level NO Gas Sensing Properties of ZnO Thin Films

NASA Astrophysics Data System (ADS)

Çorlu, Tugba; Karaduman, Irmak; Yildirim, Memet Ali; Ateş, Aytunç; Acar, Selim

2017-07-01

In this study, undoped, Cu-doped, and Ni-doped ZnO thin films have been successfully prepared by successive ionic layer adsorption and reaction method. The structural, compositional, and morphological properties of the thin films are characterized by x-ray diffractometer, energy dispersive x-ray analysis (EDX), and scanning electron microscopy, respectively. Doping effects on the NO gas sensing properties of these thin films were investigated depending on gas concentration and operating temperature. Cu-doped ZnO thin film exhibited a higher gas response than undoped and Ni-doped ZnO thin film at the operating temperature range. The sensor with Cu-doped ZnO thin film gave faster responses and recovery speeds than other sensors, so that is significant for the convenient application of gas sensor. The response and recovery speeds could be associated with the effective electron transfer between the Cu-doped ZnO and the NO molecules.

Spectroscopic ellipsometry investigation of the optical properties of graphene oxide dip-coated on magnetron sputtered gold thin films

NASA Astrophysics Data System (ADS)

Politano, Grazia Giuseppina; Vena, Carlo; Desiderio, Giovanni; Versace, Carlo

2018-02-01

Despite intensive investigations on graphene oxide-gold nanocomposites, the interaction of graphene oxide sheets with magnetron sputtered gold thin films has not been studied yet. The optical constants of graphene oxide thin films dip-coated on magnetron sputtered gold thin films were determined by spectroscopic ellipsometry in the [300-1000] wavelength range. Moreover, the morphologic properties of the samples were investigated by SEM analysis. Graphene oxide absorbs mainly in the ultraviolet region, but when it is dip-coated on magnetron sputtered gold thin films, its optical constants show dramatic changes, becoming absorbing in the visible region, with a peak of the extinction coefficient at 3.1 eV. Using magnetron sputtered gold thin films as a substrate for graphene oxide thin films could therefore be the key to enhance graphene oxide optical sheets' properties for several technological applications, preserving their oxygen content and avoiding the reduction process.

Optical stress generator and detector

DOEpatents

Maris, Humphrey J.; Stoner, Robert J

2001-01-01

Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

Optical stress generator and detector

DOEpatents

Maris, Humphrey J.; Stoner, Robert J.

1998-01-01

Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

Optical stress generator and detector

DOEpatents

Maris, H.J.; Stoner, R.J.

1998-05-05

Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects. 32 figs.

Optical stress generator and detector

DOEpatents

Maris, Humphrey J.; Stoner, Robert J

2002-01-01

Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

Optical stress generator and detector

DOEpatents

Maris, Humphrey J.; Stoner, Robert J

1999-01-01

Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

Antimicrobial activity of biopolymer-antibiotic thin films fabricated by advanced pulsed laser methods

NASA Astrophysics Data System (ADS)

Cristescu, R.; Popescu, C.; Dorcioman, G.; Miroiu, F. M.; Socol, G.; Mihailescu, I. N.; Gittard, S. D.; Miller, P. R.; Narayan, R. J.; Enculescu, M.; Chrisey, D. B.

2013-08-01

We report on thin film deposition by matrix assisted pulsed laser evaporation (MAPLE) of two polymer-drug composite thin film systems. A pulsed KrF* excimer laser source (λ = 248 nm, τ = 25 ns, ν = 10 Hz) was used to deposit composite thin films of poly(D,L-lactide) (PDLLA) containing several gentamicin concentrations. FTIR spectroscopy was used to demonstrate that MAPLE-transferred materials exhibited chemical structures similar to those of drop cast materials. Scanning electron microscopy data indicated that MAPLE may be used to fabricate thin films of good morphological quality. The activity of PDLLA-gentamicin composite thin films against Staphylococcus aureus bacteria was demonstrated using drop testing. The influence of drug concentration on microbial viability was also assessed. Our studies indicate that polymer-drug composite thin films prepared by MAPLE may be used to impart antimicrobial activity to implants, medical devices, and other contact surfaces.

Characterization of Pb-Doped GaN Thin Films Grown by Thermionic Vacuum Arc

NASA Astrophysics Data System (ADS)

Özen, Soner; Pat, Suat; Korkmaz, Şadan

2018-03-01

Undoped and lead (Pb)-doped gallium nitride (GaN) thin films have been deposited by a thermionic vacuum arc (TVA) method. Glass and polyethylene terephthalate were selected as optically transparent substrates. The structural, optical, morphological, and electrical properties of the deposited thin films were investigated. These physical properties were interpreted by comparison with related analysis methods. The crystalline structure of the deposited GaN thin films was hexagonal wurtzite. The optical bandgap energy of the GaN and Pb-doped GaN thin films was found to be 3.45 eV and 3.47 eV, respectively. The surface properties of the deposited thin films were imaged using atomic force microscopy and field-emission scanning electron microscopy, revealing a nanostructured, homogeneous, and granular surface structure. These results confirm that the TVA method is an alternative layer deposition system for Pb-doped GaN thin films.

A study on micro-structural and optical parameters of InxSe1-x thin film

NASA Astrophysics Data System (ADS)

Patel, P. B.; Desai, H. N.; Dhimmar, J. M.; Modi, B. P.

2018-04-01

Thin film of Indium Selenide (InSe) has been deposited by thermal evaporation technique onto pre cleaned glass substrate under high vacuum condition. The micro-structural and optical properties of InxSe1-x (x = 0.6, 1-x = 0.4) thin film have been characterized by X-ray diffractrometer (XRD) and UV-Visible spectrophotometer. The XRD spectra showed that InSe thin film has single phase hexagonal structure with preferred orientation along (1 1 0) direction. The micro-structural parameters (crystallite size, lattice strain, dislocation density, domain population) for InSe thin film have been calculated using XRD spectra. The optical parameters (absorption, transmittance, reflectance, energy band gap, Urbach energy) of InSe thin film have been evaluated from absorption spectra. The direct energy band gap and Urbach energy of InSe thin film is found to be 1.90 eV and 235 meV respectively.

Magnetic and structural characterization of ultra-thin Fe (222) films

NASA Astrophysics Data System (ADS)

Loving, Melissa G.; Brown, Emily E.; Rizzo, Nicholas D.; Ambrose, Thomas F.

2018-05-01

Varied thickness body centered cubic (BCC) ultrathin Fe films (10-50Å) have been sputter deposited onto Si (111) substrates. BCC Fe with the novel (222) texture was obtained by H- terminating the Si (111) starting substrate then immediately depositing the magnetic films. Structural results derived from grazing incidence x-ray diffraction and x-ray reflectivity confirm the crystallographic texture, film thickness, and interface roughness. Magnetic results indicate that Fe (222) exhibits soft magnetic switching (easy axis), high anisotropy (hard axis), which is maintained across the thickness range, and a positive magnetostriction (for the thicker film layers). The observed soft magnetic switching in this system makes it an ideal candidate for future magnetic memory development as well as other microelectronics applications that utilize magnetic materials.

Large area polysilicon films with predetermined stress characteristics and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Enhancing the color gamut of white displays using novel deep-blue organic fluorescent dyes to form color-changed thin films with improved efficiency

NASA Astrophysics Data System (ADS)

Liu, Wei-Ting; Huang, Wen-Yao

2012-10-01

This study used the novel fluorescence based deep-blue-emitting molecule BPVPDA in an organic fluorescent color thin film to exhibit deep blue color with CIE coordinates of (0.13, 0.16). The developed original organic RGB color thin film technology enables the optimization of the distinctive features of an organic light emitting diode (OLED) and thin-film-transistor (TFT) LCD display. The color filter structure maintains the same high resolution to obtain a higher level of brightness in comparison with conventional organic RGB color thin film. The image-processing engine is designed to achieve a sharp text image for a TFT LCD with organic color thin films. The organic color thin films structure uses an organic dye dopant in a limpid photoresist. With this technology, the following characteristics can be obtained: 1. high color reproduction of gamut ratio, and 2. improved luminous efficiency with organic color fluorescent thin film. This performance is among the best results ever reported for a color-filter used on TFT-LCD or OLED.

Enhancing the color gamut of white displays using novel deep-blue organic fluorescent dyes to form color-changed thin films with improved efficiency

NASA Astrophysics Data System (ADS)

Liu, Wei-ting; Huang, Wen-Yao

2012-06-01

This study used novel fluorescence based deep-blue-emitting molecules, namely BPVPDA, an organic fluorescence color thin film using BPVPDA exhibit deep blue fluorine with CIE coordinates of (0.13,0.16). The developed original Organic RGB color thin film technology enables the optimization of the distinctive features of an organic light emitting diode (OLED) and (TFT) LCD display. The color filter structure maintains the same high resolution to obtain a higher level of brightness, in comparison with conventional organic RGB color thin film. The image-processing engine is designed to achieve a sharp text image for a thin-film-transistor (TFT) LCD with organic color thin films. The organic color thin films structure uses organic dye dopent in limpid photo resist. With this technology , the following characteristics can be obtained: (1) high color reproduction of gamut ratio, and (2) improved luminous efficiency with organic color fluorescence thin film. This performance is among the best results ever reported for a color-filter used on TFT-LCD and OLED.

The effect of Argon pressure dependent V thin film on the phase transition process of (020) VO2 thin film

NASA Astrophysics Data System (ADS)

Meng, Yifan; Huang, Kang; Tang, Zhou; Xu, Xiaofeng; Tan, Zhiyong; Liu, Qian; Wang, Chunrui; Wu, Binhe; Wang, Chang; Cao, Juncheng

2018-01-01

It has been proved challenging to fabricate the single crystal orientation of VO2 thin film by a simple method. Based on chemical reaction thermodynamic and crystallization analysis theory, combined with our experimental results, we find out that when stoichiometric number of metallic V in the chemical equation is the same, the ratio of metallic V thin film surface average roughness Ra to thin film average particle diameter d decreases with the decreasing sputtering Argon pressure. Meanwhile, the oxidation reaction equilibrium constant K also decreases, which will lead to the increases of oxidation time, thereby the crystal orientation of the VO2 thin film will also become more uniform. By sputtering oxidation coupling method, metallic V thin film is deposited on c-sapphire substrate at 1 × 10-1 Pa, and then oxidized in the air with the maximum oxidation time of 65s, high oriented (020) VO2 thin film has been fabricated successfully, which exhibits ∼4.6 orders sheet resistance change across the metal-insulator transition.

Surface-area-controlled synthesis of porous TiO2 thin films for gas-sensing applications

NASA Astrophysics Data System (ADS)

Park, Jae Young; Kim, Ho-hyoung; Rana, Dolly; Jamwal, Deepika; Katoch, Akash

2017-03-01

Surface-area-controlled porous TiO2 thin films were prepared via a simple sol-gel chemical route, and their gas-sensing properties were thoroughly investigated in the presence of typical oxidizing NO2 gas. The surface area of TiO2 thin films was controlled by developing porous TiO2 networked by means of controlling the TiO2-to-TTIP (titanium isopropoxide, C12H28O4Ti) molar ratio, where TiO2 nanoparticles of size ˜20 nm were used. The sensor’s response was found to depend on the surface area of the TiO2 thin films. The porous TiO2 thin-film sensor with greater surface area was more sensitive than those of TiO2 thin films with lesser surface area. The improved sensing ability was ascribed to the porous network formed within the thin films by TiO2 sol. Our results show that surface area is a key parameter for obtaining superior gas-sensing performance; this provides important guidelines for preparing and using porous thin films for gas-sensing applications.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

1999-01-01

A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Antony, Aldrin

2015-03-28

Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BSTmore » thin films show significantly improved tunable performance over polycrystalline thin films.« less

Synthesis, characterization and oxidation of metallic cobalt (Co) thin film into semiconducting cobalt oxide (Co3O4)thin film using microwave plasma CVD

NASA Astrophysics Data System (ADS)

Rahman Ansari, Akhalakur; Hussain, Shahir; Imran, Mohd; Abdel-wahab, M. Sh; Alshahrie, Ahmed

2018-06-01

The pure cobalt thin film was deposited on the glass substrate by using DC magnetron sputtering and then exposed to microwave assist oxygen plasma generated in microwave plasma CVD. The oxidation process of Co thin film into Co3O4 thin films with different microwave power and temperature were studied. The influences of microwave power, temperature and irradiation time were investigated on the morphology and particle size of oxide thin films. The crystal structure, chemical conformation, morphologies and optical properties of oxidized Co thin films (Co3O4) were studied by using x-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Raman Spectroscopy and UV–vis Spectroscopy. The data of these films showed complete oxidation pure metallic cobalt (Co) into cobalt oxide (Co3O4). The optical properties were studied for calculating the direct band gaps which ranges from 1.35 to 1.8 eV.

Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

NASA Astrophysics Data System (ADS)

Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

2018-01-01

Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

DOE PAGES

Xiao, Zhigang; Kisslinger, Kim

2015-06-17

Thin films of hafnium dioxide (HfO 2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO 2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO 2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO 2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ringmore » oscillator to test the quality of the HfO 2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO 2 thin film functioned very well as the gate oxide.« less

Stretchable, adhesive and ultra-conformable elastomer thin films.

PubMed

Sato, Nobutaka; Murata, Atsushi; Fujie, Toshinori; Takeoka, Shinji

2016-11-16

Thermoplastic elastomers are attractive materials because of the drastic changes in their physical properties above and below the glass transition temperature (T g ). In this paper, we report that free-standing polystyrene (PS, T g : 100 °C) and polystyrene-polybutadiene-polystyrene triblock copolymer (SBS, T g : -70 °C) thin films with a thickness of hundreds of nanometers were prepared by a gravure coating method. Among the mechanical properties of these thin films determined by bulge testing and tensile testing, the SBS thin films exhibited a much lower elastic modulus (ca. 0.045 GPa, 212 nm thickness) in comparison with the PS thin films (ca. 1.19 GPa, 217 nm thickness). The lower elastic modulus and lower thickness of the SBS thin films resulted in higher conformability and thus higher strength of adhesion to an uneven surface such as an artificial skin model with roughness (R a = 10.6 μm), even though they both have similar surface energies. By analyzing the mechanical properties of the SBS thin films, the elastic modulus and thickness of the thin films were strongly correlated with their conformability to a rough surface, which thus led to a high adhesive strength. Therefore, the SBS thin films will be useful as coating layers for a variety of materials.

In-situ ellipsometry: applications to thin film research, development, and production

NASA Astrophysics Data System (ADS)

Kief, M. T.

1999-07-01

Many industries including the optics industry, semiconductor industry, and magnetic storage industry are deeply rooted in the science and technology of thin film materials and thin film based devices. Research in novel thin film systems and the engineering of artificial structures increasingly requires a control on the atomic scale in both thickness and lateral order. Development of the deposition and fabrication processes for these thin film structures requires technical sophistication and efficiency combined with an understanding of the multi-faceted process interactions. The production of these materials necessitates a remarkable degree of control to minimize scrap and assure good performance. Furthermore, in today's industry these operations must occur at an ever accelerating pace. In this article, we will review one technique which can make these challenges more tractable - insitu ellipsometry. This is a very powerful tool which is capable of characterizing thin film processes in real-time. We review the art and illustrate with novel applications to metal thin film growth. In addition, we will illustrate how information obtained with insitu ellipsometry can predict the end use thin film properties such as the transport properties. In conclusion, further advances in insitu ellipsometry and its applications will be discussed in terms of needs and trends as a tool for thin film research, development and production.

Comparison of full 3-D, thin-film 3-D, and thin-film plate analyses of a postbuckled embedded delamination

NASA Technical Reports Server (NTRS)

Whitcomb, John D.

1989-01-01

Strain-energy release rates are often used to predict when delamination growth will occur in laminates under compression. Because of the inherently high computational cost of performing such analyses, less rigorous analyses such as thin-film plate analysis were used. The assumptions imposed by plate theory restrict the analysis to the calculation of total strain energy, G(sub t). The objective is to determine the accuracy of thin-film plate analysis by comparing the distribution of G(sub t) calculated using fully three dimensional (3D), thin-film 3D, and thin-film plate analyses. Thin-film 3D analysis is the same as thin-film plate analysis, except 3D analysis is used to model the sublaminate. The 3D stress analyses were performed using the finite element program NONLIN3D. The plate analysis results were obtained from published data, which used STAGS. Strain-energy release rates were calculated using variations of the virtual crack closure technique. The results demonstrate that thin-film plate analysis can predict the distribution of G(sub t) quite well, at least for the configurations considered. Also, these results verify the accuracy of the strain-energy release rate procedure for plate analysis.

Comparison of effective transverse piezoelectric coefficients e31,f of Pb(Zr,Ti)O3 thin films between direct and converse piezoelectric effects

NASA Astrophysics Data System (ADS)

Tsujiura, Yuichi; Kawabe, Saneyuki; Kurokawa, Fumiya; Hida, Hirotaka; Kanno, Isaku

2015-10-01

We evaluated the effective transverse piezoelectric coefficients (e31,f) of Pb(Zr,Ti)O3 (PZT) thin films from both the direct and converse piezoelectric effects of unimorph cantilevers. (001) preferentially oriented polycrystalline PZT thin films and (001)/(100) epitaxial PZT thin films were deposited on (111)Pt/Ti/Si and (001)Pt/MgO substrates, respectively, by rf-magnetron sputtering, and their piezoelectric responses owing to intrinsic and extrinsic effects were examined. The direct and converse |e31,f| values of the polycrystalline PZT thin films were calculated as 6.4 and 11.5-15.0 C/m2, respectively, whereas those of the epitaxial PZT thin films were calculated as 3.4 and 4.6-4.8 C/m2, respectively. The large |e31,f| of the converse piezoelectric property of the polycrystalline PZT thin films is attributed to extrinsic piezoelectric effects. Furthermore, the polycrystalline PZT thin films show a clear nonlinear piezoelectric contribution, which is the same as the Rayleigh-like behavior reported in bulk PZT. In contrast, the epitaxial PZT thin films on the MgO substrate show a piezoelectric response owing to the intrinsic and linear extrinsic effects, and no nonlinear contribution was observed.

Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Kalla, Ajay; Gonzalez, Damian; Ribelin, Rosine

2005-01-01

Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

Transferable and flexible thin film devices for engineering applications

NASA Astrophysics Data System (ADS)

Mutyala, Madhu Santosh K.; Zhou, Jingzhou; Li, Xiaochun

2014-05-01

Thin film devices can be of significance for manufacturing, energy conversion systems, solid state electronics, wireless applications, etc. However, these thin film sensors/devices are normally fabricated on rigid silicon substrates, thus neither flexible nor transferrable for engineering applications. This paper reports an innovative approach to transfer polyimide (PI) embedded thin film devices, which were fabricated on glass, to thin metal foils. Thin film thermocouples (TFTCs) were fabricated on a thin PI film, which was spin coated and cured on a glass substrate. Another layer of PI film was then spin coated again on TFTC/PI and cured to obtain the embedded TFTCs. Assisted by oxygen plasma surface coarsening of the PI film on the glass substrate, the PI embedded TFTC was successfully transferred from the glass substrate to a flexible copper foil. To demonstrate the functionality of the flexible embedded thin film sensors, they were transferred to the sonotrode tip of an ultrasonic metal welding machine for in situ process monitoring. The dynamic temperatures near the sonotrode tip were effectively measured under various ultrasonic vibration amplitudes. This technique of transferring polymer embedded electronic devices onto metal foils yield great potentials for numerous engineering applications.

Quantifying resistances across nanoscale low- and high-angle interspherulite boundaries in solution-processed organic semiconductor thin films.

PubMed

Lee, Stephanie S; Mativetsky, Jeffrey M; Loth, Marsha A; Anthony, John E; Loo, Yueh-Lin

2012-11-27

The nanoscale boundaries formed when neighboring spherulites impinge in polycrystalline, solution-processed organic semiconductor thin films act as bottlenecks to charge transport, significantly reducing organic thin-film transistor mobility in devices comprising spherulitic thin films as the active layers. These interspherulite boundaries (ISBs) are structurally complex, with varying angles of molecular orientation mismatch along their lengths. We have successfully engineered exclusively low- and exclusively high-angle ISBs to elucidate how the angle of molecular orientation mismatch at ISBs affects their resistivities in triethylsilylethynyl anthradithiophene thin films. Conductive AFM and four-probe measurements reveal that current flow is unaffected by the presence of low-angle ISBs, whereas current flow is significantly disrupted across high-angle ISBs. In the latter case, we estimate the resistivity to be 22 MΩμm(2)/width of the ISB, only less than a quarter of the resistivity measured across low-angle grain boundaries in thermally evaporated sexithiophene thin films. This discrepancy in resistivities across ISBs in solution-processed organic semiconductor thin films and grain boundaries in thermally evaporated organic semiconductor thin films likely arises from inherent differences in the nature of film formation in the respective systems.

Fabrication and characterization of {110}-oriented Pb(Zr,Ti)O3 thin films on Pt/SiO2/Si substrates using PdO//Pd buffer layer

NASA Astrophysics Data System (ADS)

Oshima, Naoya; Uchiyama, Kiyoshi; Ehara, Yoshitaka; Oikawa, Takahiro; Ichinose, Daichi; Tanaka, Hiroki; Sato, Tomoya; Uchida, Hiroshi; Funakubo, Hiroshi

2017-10-01

A strongly {110}-oriented perovskite-type thin film of tetragonal Pb(Zr0.4Ti0.6)O3 (PZT) was successfully obtained on a (100)Si substrate using a {101}PdO//{111}Pd thin film as a buffer layer. The {101}PdO//{111}Pd thin film buffer layer was obtained by oxidizing {111}Pd after depositing {111}Pd on a {111}Pt/TiO x /SiO2/{100}Si substrate. Using this buffer layer, a {110} c -oriented SrRuO3 (SRO) thin film was deposited by sputtering as a bottom electrode of PZT thin films. Subsequently, the {110}-oriented PZT thin film can be deposited on a (110) c SRO thin film by metal-organic chemical deposition (MOCVD) and its properties can be compared with those of PZT thin films with other orientations of {100} and {111}. Among the {100}, {110}, {111}-oriented PZT films, the {100}-oriented one showed the largest remnant polarization, which is in good agreement with those of the PZTs epitaxially grown in the 〈100〉, 〈110〉, and 〈111〉 directions. The other properties, i.e., piezoelectricity and dielectric constants, also showed similar anisotropic tendencies, which is in good agreement with the data reported in the epitaxially grown PZTs.

An overview of thin film nitinol endovascular devices.

PubMed

Shayan, Mahdis; Chun, Youngjae

2015-07-01

Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications. Copyright © 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Chemical and thermal stability of the characteristics of filtered vacuum arc deposited ZnO, SnO2 and zinc stannate thin films

NASA Astrophysics Data System (ADS)

Çetinörgü, E.; Goldsmith, S.

2007-09-01

ZnO, SnO2 and zinc stannate thin films were deposited on commercial microscope glass and UV fused silica substrates using filtered vacuum arc deposition system. During the deposition, the substrate temperature was at room temperature (RT) or at 400 °C. The film structure and composition were determined using x-ray diffraction and x-ray photoelectron spectroscopy, respectively. The transmission of the films in the VIS was 85% to 90%. The thermal stability of the film electrical resistance was determined in air as a function of the temperature in the range 28 °C (RT) to 200 °C. The resistance of ZnO increased from ~ 5000 to 105 Ω when heated to 200 °C, that of SnO2 films increased from 500 to 3900 Ω, whereas that of zinc stannate thin films increased only from 370 to 470 Ω. During sample cooling to RT, the resistance of ZnO and SnO2 thin films continued to rise considerably; however, the increase in the zinc stannate thin film resistance was significantly lower. After cooling to RT, ZnO and SnO2 thin films became practically insulators, while the resistance of zinc stannate was 680 Ω. The chemical stability of the films was determined by immersing in acidic and basic solutions up to 27 h. The SnO2 thin films were more stable in the HCl solution than the ZnO and the zinc stannate thin films; however, SnO2 and zinc stannate thin films that were immersed in the NaOH solution did not dissolve after 27 h.

Thermal conductivity of pure silica MEL and MFI zeolite thin films

NASA Astrophysics Data System (ADS)

Coquil, Thomas; Lew, Christopher M.; Yan, Yushan; Pilon, Laurent

2010-08-01

This paper reports the room temperature cross-plane thermal conductivity of pure silica zeolite (PSZ) MEL and MFI thin films. PSZ MEL thin films were prepared by spin coating a suspension of MEL nanoparticles in 1-butanol solution onto silicon substrates followed by calcination and vapor-phase silylation with trimethylchlorosilane. The mass fraction of nanoparticles within the suspension varied from 16% to 55%. This was achieved by varying the crystallization time of the suspension. The thin films consisted of crystalline MEL nanoparticles embedded in a nonuniform and highly porous silica matrix. They featured porosity, relative crystallinity, and MEL nanoparticles size ranging from 40% to 59%, 23% to 47% and 55 nm to 80 nm, respectively. PSZ MFI thin films were made by in situ crystallization, were b-oriented, fully crystalline, and had a 33% porosity. Thermal conductivity of these PSZ thin films was measured at room temperature using the 3ω method. The cross-plane thermal conductivity of the MEL thin films remained nearly unchanged around 1.02±0.10 W m-1 K-1 despite increases in (i) relative crystallinity, (ii) MEL nanoparticle size, and (iii) yield caused by longer nanoparticle crystallization time. Indeed, the effects of these parameters on the thermal conductivity were compensated by the simultaneous increase in porosity. PSZ MFI thin films were found to have similar thermal conductivity as MEL thin films even though they had smaller porosity. Finally, the average thermal conductivity of the PSZ films was three to five times larger than that reported for amorphous sol-gel mesoporous silica thin films with similar porosity and dielectric constant.

Atmospheric deposition process for enhanced hybrid organic-inorganic multilayer barrier thin films for surface protection

NASA Astrophysics Data System (ADS)

Rehman, Mohammad Mutee ur; Kim, Kwang Tae; Na, Kyoung Hoan; Choi, Kyung Hyun

2017-11-01

In this study, organic polymer poly-vinyl acetate (PVA) and inorganic aluminum oxide (Al2O3) have been used together to fabricate a hybrid barrier thin film for the protection of PET substrate. The organic thin films of PVA were developed through roll to roll electrohydrodynamic atomization (R2R-EHDA) whereas the inorganic thin films of Al2O3 were grown by roll to roll spatial atmospheric atomic layer deposition (R2R-SAALD) for mass production. The use of these two technologies together to develop a multilayer hybrid organic-inorganic barrier thin films under atmospheric conditions is reported for the first time. These multilayer hybrid barrier thin films are fabricated on flexible PET substrate. Each layer of Al2O3 and PVA in barrier thin film exhibited excellent morphological, chemical and optical properties. Extremely uniform and atomically thin films of Al2O3 with average arithmetic roughness (Ra) of 1.64 nm and 1.94 nm respectively concealed the non-uniformity and irregularities in PVA thin films with Ra of 2.9 nm and 3.6 nm respectively. The optical transmittance of each layer was ∼ 80-90% while the water vapor transmission rate (WVTR) of hybrid barrier was in the range of ∼ 2.3 × 10-2 g m-2 day-1 with a total film thickness of ∼ 200 nm. Development of such hybrid barrier thin films with mass production and low cost will allow various flexible electronic devices to operate in atmospheric conditions without degradation of their properties.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

PubMed

Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-17

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

PubMed Central

2012-01-01

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

Handshake electron transfer from hydrogen Rydberg atoms incident at a series of metallic thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gibbard, J. A.; Softley, T. P.

2016-06-21

Thin metallic films have a 1D quantum well along the surface normal direction, which yields particle-in-a-box style electronic quantum states. However the quantum well is not infinitely deep and the wavefunctions of these states penetrate outside the surface where the electron is bound by its own image-charge attraction. Therefore a series of discrete, vacant states reach out from the thin film into the vacuum increasing the probability of electron transfer from an external atom or molecule to the thin film, especially for the resonant case where the quantum well energy matches that of the atom. We show that “handshake” electronmore » transfer from a highly excited Rydberg atom to these thin-film states is experimentally measurable. Thicker films have a wider 1D box, changing the energetic distribution and image-state contribution to the thin film wavefunctions, resulting in more resonances. Calculations successfully predict the number of resonances and the nature of the thin-film wavefunctions for a given film thickness.« less

Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

NASA Astrophysics Data System (ADS)

Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

Microstructural investigation of nickel silicide thin films and the silicide-silicon interface using transmission electron microscopy.

PubMed

Bhaskaran, M; Sriram, S; Mitchell, D R G; Short, K T; Holland, A S; Mitchell, A

2009-01-01

This article discusses the results of transmission electron microscopy (TEM)-based investigation of nickel silicide (NiSi) thin films grown on silicon. Nickel silicide is currently used as the CMOS technology standard for local interconnects and in electrical contacts. Films were characterized with a range of TEM-based techniques along with glancing angle X-ray diffraction. The nickel silicide thin films were formed by vacuum annealing thin films of nickel (50 nm) deposited on (100) silicon. The cross-sectional samples indicated a final silicide thickness of about 110 nm. This investigation studied and reports on three aspects of the thermally formed thin films: the uniformity in composition of the film using jump ratio maps; the nature of the interface using high resolution imaging; and the crystalline orientation of the thin films using selected-area electron diffraction (SAED). The analysis highlighted uniform composition in the thin films, which was also substantiated by spectroscopy techniques; an interface exhibiting the desired abrupt transition from silicide to silicon; and desired and preferential crystalline orientation corresponding to stoichiometric NiSi, supported by glancing angle X-ray diffraction results.

Effects of bacteria on CdS thin films used in technological devices

NASA Astrophysics Data System (ADS)

Alpdoğan, S.; Adıgüzel, A. O.; Sahan, B.; Tunçer, M.; Metin Gubur, H.

2017-04-01

Cadmium sulfide (CdS) thin films were fabricated on glass substrates by the chemical bath deposition method at 70 {}^\\circ \\text{C} considering deposition times ranging from 2 h to 5 h. The optical band gaps of CdS thin films were found to be in the 2.42-2.37 eV range. CdS thin films had uniform spherical nano-size grains which had polycrystalline, hexagonal and cubic phases. The films had a characteristic electrical resistivity of the order of {{10}5} Ω \\text{cm} and n-type conductivity at room condition. CdS thin films were incubated in cultures of B.domonas aeruginosa and Staphylococcus aureus, which exist abundantly in the environment, and form biofilms. SEM images showed that S. aureus and K. pneumonia were detected significantly on the film surfaces with a few of P. aeruginosa and B. subtilis cells attached. CdS thin film surface exhibits relatively good resistance to the colonization of P. aeruginosa and B. subtilis. Optical results showed that the band gap of CdS thin films which interacted with the bacteria is 2.42 \\text{eV} . The crystal structure and electrical properties of CdS thin films were not affected by bacterial adhesion. The antimicrobial effect of CdS nanoparticles was different for different bacterial strains.

Magnetic damping phenomena in ferromagnetic thin-films and multilayers

NASA Astrophysics Data System (ADS)

Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

2017-11-01

Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

Thin-film thickness measurement method based on the reflection interference spectrum

NASA Astrophysics Data System (ADS)

Jiang, Li Na; Feng, Gao; Shu, Zhang

2012-09-01

A method is introduced to measure the thin-film thickness, refractive index and other optical constants. When a beam of white light shines on the surface of the sample film, the reflected lights of the upper and the lower surface of the thin-film will interfere with each other and reflectivity of the film will fluctuate with light wavelength. The reflection interference spectrum is analyzed with software according to the database, while the thickness and refractive index of the thin-film is measured.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics.

PubMed

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-25

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS 2 ) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS 2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS 2 thin film by annealing at 450 °C for 1 h in H 2 S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS 2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 10 5 and 10 4 cm -1 in the visible region, respectively. In addition, SnS and SnS 2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS 2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS 2 thin films exhibited on-off drain current ratios of 8.8 and 2.1 × 10 3 and mobilities of 0.21 and 0.014 cm 2 V -1 s -1 , respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS 2 thin films were 6.0 × 10 16 and 8.7 × 10 13 cm -3 , respectively, in this experiment.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

NASA Astrophysics Data System (ADS)

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-01

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

Thin-film preparation and characterization of Cs 3Sb 2I 9: A lead-free layered perovskite semiconductor

DOE PAGES

Saparov, Bayrammurad; Hong, Feng; Sun, Jon -Paul; ...

2015-07-09

In this study, computational, thin-film deposition and characterization approaches have been used to examine the ternary halide semiconductor Cs 3Sb 2I 9. Cs 3Sb 2I 9 has two known structural modifications, the 0-D dimer form (space group P6 3/mmc, No. 194) and the 2-D layered form (Pmore » $$\\bar{3}$$ m1, No. 164), which can be prepared via solution and solid state or gas phase reactions, respectively. Our computational investigations suggest that the layered form, which is a one-third Sb-deficient derivative of the ubiquitous perovskite structure, is a potential candidate for high-band-gap photovoltaic (PV) applications. In this work, we describe details of a two-step deposition approach that enables the preparation of large grain (>1 µm) and continuous thin films of the lead-free layered perovskite derivative Cs 3Sb 2I 9. Depending on the deposition conditions, films that are c-axis oriented or randomly oriented can be obtained. The fabricated thin films show enhanced stability under ambient air, compared to methylammonium lead (II) iodide perovskite films stored under similar conditions, and an optical band gap value of 2.05 eV. Photoelectron spectroscopy study yields an ionization energy of 5.6 eV, with the valence band maximum approximately 0.85 eV below the Fermi level, indicating near-intrinsic, weakly p-type character. Density Functional Theory (DFT) analysis points to a nearly direct band gap for this material (less than 0.02 eV difference between the direct and indirect band gaps) and a similar high-level of absorption compared to CH 3NH 3PbI 3. The photoluminescence peak intensity of Cs 3Sb 2I 9 is substantially suppressed compared to that of CH 3NH 3PbI 3, likely reflecting the presence of deep level defects that result in non-radiative recombination in the film, with computational results pointing to I i, IS b, and V I as being likely candidates. A key further finding from this study is that, despite a distinctly layered structure, the electronic transport anisotropy is less pronounced due to the high ionicity of the I atoms and the strong anti-bonding interactions between the Sb s lone pair states and I p states, which leads to a moderately dispersive valence band.« less

Effect of temperature on NH3 sensing by ZnO: Mg thin film grown by radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Vinoth, E.; Gopalakrishnan, N.

2018-04-01

Undoped and Mg doped (at l0 mol %) ZnO thin films have been grown on glass substrates by using the RF magnetron sputtering. The structural properties of the fabricated thin films were studied by X-ray diffraction analysis and it was found hexagonal wurtzite phase and preferential orientation along (002) of both films. Green Band Emission peaks in the Photoluminescence spectra confirm the structural defects such as oxygen vacancies (Vo) in the films. Uniform distribution of spherical shape morphology of grains observed in the both films by FESEM. However, the growth of grains was found in the Mg doped thin film. The temperature dependent ammonia sensing is done by the indigenously made gas sensing setup. The gas response of the both films was increased as the temperature increases, attains maximum at 75° C and then decreases. Response and recovery time measurementswere donefor boththe films and it shows the fast response time and quick recovery for doped thin film compared to the pure ZnO thin film.

Processing, Characteristics, and Optical Properties of Wet Chemically Derived Planar Dielectric Waveguides.

NASA Astrophysics Data System (ADS)

Weisenbach, Lori Ann

An experimental study of the processing and attenuation characteristics of solution derived, thin film, planar waveguides was made. In this study, the densification and attenuation characteristics of a variety of compositions were compared. To insure that the effects measured reflected compositional differences and not processing artifacts, guidelines for the reproducible fabrication of optical quality layers, irrespective of composition, were established. A broad range of compositions were prepared and an effort was made to keep the various solution syntheses as simple and similar as possible. The densification and attenuation of binary SiO _2-TiO_2 compositions was measured, then compared to the densification and attenuation of SiO_2-TiO_2 -R_{rm x}O _{rm y} (where R = Al or Zn) ternary compositions. Film densification was not strongly dependent upon composition, and was successfully modelled using the Lorentz-Lorenz relation, assuming the open volume in the undensified films were filled with adsorbed water. The attenuation measured at 632.8 nm did not vary with composition, except for the Zn ternary samples. Waveguides with losses of <1dB/cm could be fabricated from all other compositions. Waveguide attenuation was measured for films of different thickness, and compared to modelled predictions. The attenuation increased as layer thickness decreased, suggesting the predominance of the surface scattering contribution. To confirm that absorption losses were negligible, the wavelength dependence of the waveguides was measured. The wavelength dependence varied with composition, suggesting the absorption varied with composition. Possible mechanisms of absorption in the waveguides were discussed; the interaction of the atmosphere with the film structure is proposed as the cause of the deterioration. Film development for the binary SiO_2 -TiO_2 films was also studied as a function of increased firing time at 500^ circC. Multiple firings at 500^ circC increased the film density and the resistance to deterioration, but also increased the surface roughness of the films. Increased surface roughness, increased the scattering losses measured for the guide. The application of solution derived thin films was demonstrated with the successful fabrication of a novel optical device. The fabrication of the Single Leakage -Channel Grating Coupler illustrated specific design tolerances could be met and the resulting device performance near the theoretical maximum.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Routh, Prahlad K.; Nykypanchuk, Dmytro; Venkatesh, T. A.

Large area, device relevant sized microporous thin films are formed with commercially available polythiophenes by the breath figure technique, a water-assisted micro patterning method, with such semitransparent thin films exhibiting periodicity and uniformity dictated by the length of the polymer side chain. Compared to drop casted thin films, the microporous thin films exhibit increased crystallinity due to stronger packing of the polymer inside the honeycomb frame.

Studies on RF sputtered (WO{sub 3}){sub 1-x} (V{sub 2}O{sub 5}){sub x} thin films for smart window applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meenakshi, M.; Perumal, P.; Sivakumar, R.

2016-05-23

V{sub 2}O{sub 5} doped WO{sub 3} targets for RF sputtering thin film deposition were prepared for various compositions. Thin films of (WO{sub 3}){sub 1-x} (V{sub 2}O{sub 5}){sub x} were deposited on to glass substrates using these targets. Structural characteristics of the prepared targets and thin films were studied using X-ray diffraction. Laser Raman studies were carried out on the thin films to confirm the compound formation.

Thin-Film Photovoltaics: Status and Applications to Space Power

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Hepp, Aloysius F.

1991-01-01

The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

Bandgap-Engineered Zinc-Tin-Oxide Thin Films for Ultraviolet Sensors.

PubMed

Cheng, Tien-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn

2018-07-01

Zinc-tin-oxide thin-film transistors were prepared by radio frequency magnetron co-sputtering, while an identical zinc-tin-oxide thin film was deposited simultaneously on a clear glass substrate to facilitate measurements of the optical properties. When we adjusted the deposition power of ZnO and SnO2, the bandgap of the amorphous thin film was dominated by the deposition power of SnO2. Since the thin-film transistor has obvious absorption in the ultraviolet region owing to the wide bandgap, the drain current increases with the generation of electron-hole pairs. As part of these investigations, a zinc-tin-oxide thin-film transistor has been fabricated that appears to be very promising for ultraviolet applications.

PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khairnar, A. G., E-mail: agkhairnar@gmail.com; Patil, V. S.; Agrawal, K. S.

The study of ZrO{sub 2} thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO{sub 2} thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO{sub 2} thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°Ð¡. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.

Synergistic effect of indium and gallium co-doping on the properties of RF sputtered ZnO thin films

NASA Astrophysics Data System (ADS)

Shaheera, M.; Girija, K. G.; Kaur, Manmeet; Geetha, V.; Debnath, A. K.; Karri, Malvika; Thota, Manoj Kumar; Vatsa, R. K.; Muthe, K. P.; Gadkari, S. C.

2018-04-01

ZnO thin films were synthesized using RF magnetron sputtering, with simultaneous incorporation of Indium (In) and Gallium (Ga). The structural, optical, chemical composition and surface morphology of the pure and co-doped (IGZO) thin films were characterized by X-Ray diffraction (XRD), UV-visible spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), and Raman spectroscopy. XRD revealed that these films were oriented along c-axis with hexagonal wurtzite structure. The (002) diffraction peak in the co-doped sample was observed at 33.76° with a slight shift towards lower 2θ values as compared to pure ZnO. The surface morphology of the two thin films was observed to differ. For pure ZnO films, round grains were observed and for IGZO thin films round as well as rod type grains were observed. All thin films synthesized show excellent optical properties with more than 90% transmission in the visible region and band gap of the films is observed to decrease with co-doping. The co doping of In and Ga is therefore expected to provide a broad range optical and physical properties of ZnO thin films for a variety of optoelectronic applications.

Disordering of ultra thin WO3 films by high-energy ions

NASA Astrophysics Data System (ADS)

Matsunami, N.; Kato, M.; Sataka, M.; Okayasu, S.

2017-10-01

We have studied disordering or atomic structure modification of ultra thin WO3 films under impact of high-energy ions with non-equilibrium and equilibrium charge incidence, by means of X-ray diffraction (XRD). WO3 films were prepared by thermal oxidation of W deposited on MgO substrate. Film thickness obtained by Rutherford backscattering spectrometry (RBS) is as low as 2 nm. Smoothness of film surface was observed by atomic force microscopy. It is found that the ratio of XRD intensity degradation per 90 MeV Ni+10 ion (the incident charge is lower than the equilibrium charge) to that per 90 MeV Ni ion with the equilibrium charge depends on the film thickness. Also, film thickness dependence is observed for 100 MeV Xe+14. By comparison of the experimental result with a simple model calculation based on the assumption that the mean charge of ions along the depth follows a saturation curve with power-law approximation to the charge dependent electronic stopping power, the characteristic length attaining the equilibrium charge is obtained to be ∼7 nm for 90 MeV Ni+10 ion incidence or the electron loss cross section of ∼1016 cm2, demonstrating that disordering of ultra WO3 films has been observed and a fundamental quantity can be derived through material modification.

Film and membrane-model thermodynamics of free thin liquid films.

PubMed

Radke, C J

2015-07-01

In spite of over 7 decades of effort, the thermodynamics of thin free liquid films (as in emulsions and foams) lacks clarity. Following a brief review of the meaning and measurement of thin-film forces (i.e., conjoining/disjoining pressures), we offer a consistent analysis of thin-film thermodynamics. By carefully defining film reversible work, two distinct thermodynamic formalisms emerge: a film model with two zero-volume membranes each of film tension γ(f) and a membrane model with a single zero-volume membrane of membrane tension 2γ(m). In both models, detailed thermodynamic analysis gives rise to thin-film Gibbs adsorption equations that allow calculation of film and membrane tensions from measurements of disjoining-pressure isotherms. A modified Young-Laplace equation arises in the film model to calculate film-thickness profiles from the film center to the surrounding bulk meniscus. No corresponding relation exists in the membrane model. Illustrative calculations of disjoining-pressure isotherms for water are presented using square-gradient theory. We report considerable deviations from Hamaker theory for films less than about 3 nm in thickness. Such thin films are considerably more attractive than in classical Hamaker theory. Available molecular simulations reinforce this finding. Copyright © 2014 Elsevier Inc. All rights reserved.

Photoluminescence and cathodoluminescence properties of green emitting SrGa2{S}4 : Eu2+ thin film

NASA Astrophysics Data System (ADS)

Chartier, Céline; Benalloul, Paul; Barthou, Charles; Frigerio, Jean-Marc; Mueller, Gerd O.; Mueller-Mach, Regina; Trottier, Troy

2002-02-01

Photoluminescence and cathodoluminescence properties of SrGa2S4 : Eu2+ thin films prepared by reactive RF magnetron sputtering are investigated. Luminescence performances of the phosphor in the thin film form are compared to those of powder samples: the brightness efficiency of thin films is found to be about 30% of the efficiency of powder at low current density. A ratio higher than 40% is expected at higher current density. Thin film screens for FEDs will become a positive alternative to powder screens provided that film quality and light extraction could be improved by optimization of thickness and deposition parameters.

Effect of temperature on optical properties of PMMA/SiO2 composite thin film

NASA Astrophysics Data System (ADS)

Soni, Gyanesh; Srivastava, Subodh; Soni, Purushottam; Kalotra, Pankaj; Vijay, Y. K.

2018-05-01

Effect of temperature on PMMA/SiO2 composites thin films were investigated. Nanocomposite flexible thin films of 60 µm thicknesses with different loading of SiO2 nanoparticles were prepared using solution casting method. SEM images show that SiO2 nanoparticles are distributed uniformly in PMMA matrix without any lumps on the surface, and PMMA/SiO2 nano composite thin films had a smoother and regular morphology. UV-Vis and optical band gap measurements revealed that both the concentration of SiO2 nanoparticles and temperature affect the optical properties of the composite thin film in comparison to the pure PMMA film.

Guest-Induced Two-Way Structural Transformation in a Layered Metal-Organic Framework Thin Film.

PubMed

Haraguchi, Tomoyuki; Otsubo, Kazuya; Sakata, Osami; Fujiwara, Akihiko; Kitagawa, Hiroshi

2016-12-28

Fabrication of thin films made of metal-organic frameworks (MOFs) has been intensively pursued for practical applications that use the structural response of MOFs. However, to date, only physisorption-induced structural response has been studied in these films. Chemisorption can be expected to provide a remarkable structural response because of the formation of bonds between guest molecules and reactive metal sites in host MOFs. Here, we report that chemisorption-induced two-way structural transformation in a nanometer-sized MOF thin film. We prepared a two-dimensional layered-type MOF Fe[Pt(CN) 4 ] thin film using a step-by-step approach. Although the as-synthesized film showed poor crystallinity, the dehydrated form of this thin film had a highly oriented crystalline nature (Film-D) as confirmed by synchrotron X-ray diffraction (XRD). Surprisingly, under water and pyridine vapors, Film-D showed chemisorption-induced dynamic structural transformations to Fe(L) 2 [Pt(CN) 4 ] thin films [L = H 2 O (Film-H), pyridine (Film-P)], where water and pyridine coordinated to the open Fe 2+ site. Dynamic structural transformations were also confirmed by in situ XRD, sorption measurement, and infrared reflection absorption spectroscopy. This is the first report of chemisorption-induced dynamic structural response in a MOF thin film, and it provides useful insights, which would lead to future practical applications of MOFs utilizing chemisorption-induced structural responses.

Pulsed Laser Deposition of High Temperature Protonic Films

NASA Technical Reports Server (NTRS)

Dynys, Fred W.; Berger, M. H.; Sayir, Ali

2006-01-01

Pulsed laser deposition has been used to fabricate nanostructured BaCe(0.85)Y(0.15)O3- sigma) films. Protonic conduction of fabricated BaCe(0.85)Y(0.15)O(3-sigma) films was compared to sintered BaCe(0.85)Y(0.15)O(3-sigma). Sintered samples and laser targets were prepared by sintering BaCe(0.85)Y(0.15)O(3-sigma) powders derived by solid state synthesis. Films 1 to 8 micron thick were deposited by KrF excimer laser on porous Al2O3 substrates. Thin films were fabricated at deposition temperatures of 700 to 950 C at O2 pressures up to 200 mTorr using laser pulse energies of 0.45 - 0.95 J. Fabricated films were characterized by X-ray diffraction, electron microscopy and electrical impedance spectroscopy. Single phase BaCe(0.85)Y(0.15)O(3-sigma) films with a columnar growth morphology are observed with preferred crystal growth along the [100] or [001] direction. Results indicate [100] growth dependence upon laser pulse energy. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 C to 900 C. Electrical conduction behavior was dependent upon film deposition temperature. Maximum conductivity occurs at deposition temperature of 900 oC; the electrical conductivity exceeds the sintered specimen. All other deposited films exhibit a lower electrical conductivity than the sintered specimen. Activation energy for electrical conduction showed dependence upon deposition temperature, it varied

Three-dimensional modelling of thin liquid films over spinning disks

NASA Astrophysics Data System (ADS)

Zhao, Kun; Wray, Alex; Yang, Junfeng; Matar, Omar

2016-11-01

In this research the dynamics of a thin film flowing over a rapidly spinning, horizontal disk is considered. A set of non-axisymmetric evolution equations for the film thickness, radial and azimuthal flow rates are derived using a boundary-layer approximation in conjunction with the Karman-Polhausen approximation for the velocity distribution in the film. These highly nonlinear partial differential equations are then solved numerically in order to reveal the formation of two and three-dimensional large-amplitude waves that travel from the disk inlet to its periphery. The spatio-temporal profile of film thickness provides us with visualization of flow structures over the entire disk and by varying system parameters(volumetric flow rate of fluid and rotational speed of disk) different wave patterns can be observed, including spiral, concentric, smooth waves and wave break-up in exceptional conditions. Similar types of waves can be found by experimentalists in literature and CFD simulation and our results show good agreement with both experimental and CFD results. Furthermore, the semi-parabolic velocity profile assumed in our model under the waves is directly compared with CFD data in various flow regimes in order to validate our model. EPSRC UK Programme Grant EP/K003976/1.

Multifrequency characterization of viscoelastic polymers and vapor sensing based on SAW oscillators.

PubMed

Yadava, R D S; Kshetrimayum, Roshan; Khaneja, Mamta

2009-12-01

Simplified relations for the changes in SAW velocity and attenuation due to thin polymer coatings and vapor sorption are presented by making analytic approximations to the complex theoretical model developed earlier by Martin et al. [Anal. Chem. 66 (14) (1994) 2201-2219]. The approximate velocity relation is accurate within 4% for the film thicknesses up to 20% of the acoustic wavelength in the polymer film, and is useful for analyzing the mass loading, swelling and viscoelastic effects in SAW vapor sensors. The approximate attenuation relation is accurate within 20% for very thin films, (less than 2% of the acoustic wavelength in the film). Based on these relations, a new procedure for determination of polymer viscoelastic properties is described that exploits the frequency dependence of the velocity and attenuation perturbations, and employs multifrequency measurement on the same SAW platform. Expressions for individual contributions from the mass loading, film swelling and viscoelastic effects in SAW vapor sensors are derived, and their implications for the sensor design and operation are discussed. Also, a new SAW comb filter design is proposed that offers possibility for multimode SAW oscillator operation over a decade of frequency variation, and illustrates feasibility for experimental realization of wide bandwidth multifrequency SAW platforms.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

1999-07-13

A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

Development of High Resistive and High Magnetization Soft Thin Film and Fabrication of Thin Film Inductors

DTIC Science & Technology

2004-11-01

properties of Co- doped ZnO nanocluster films", .J. of Appl. Phys. in press, 2005 2. Presentations (contributed): Conference Contributions: 1) Y. Qiang...gigahertz band applications. The effects of substrates bias, sputter parameters, and seed-layer have thoroughly been investigated. The magnetic...Adequate properties of soft magnetic thin film were evaluated by an analytical calculation [1] to meet the requirement for gigahertz band thin-film

Organic thin film transistors using a liquid crystalline palladium phthalocyanine as active layer

NASA Astrophysics Data System (ADS)

Jiménez Tejada, Juan A.; Lopez-Varo, Pilar; Chaure, Nandu B.; Chambrier, Isabelle; Cammidge, Andrew N.; Cook, Michael J.; Jafari-Fini, Ali; Ray, Asim K.

2018-03-01

70 nm thick solution-processed films of a palladium phthalocyanine (PdPc6) derivative bearing eight hexyl (-C6H13) chains at non-peripheral positions have been employed as active layers in the fabrication of bottom-gate bottom-contact organic thin film transistors (OTFTs) deposited on highly doped p-type Si (110) substrates with SiO2 gate dielectric. The dependence of the transistor electrical performance upon the mesophase behavior of the PdPc6 films has been investigated by measuring the output and transfer characteristics of the OTFT having its active layer ex situ vacuum annealed at temperatures between 500 °C and 200 °C. A clear correlation between the annealing temperature and the threshold voltage and carrier mobility of the transistors, and the transition temperatures extracted from the differential scanning calorimetric curves for bulk materials has been established. This direct relation has been obtained by means of a compact electrical model in which the contact effects are taken into account. The precise determination of the contact-voltage drain-current curves allows for obtaining such a relation.

Solution of the Inverse Problem for Thin Film Patterning by Electrohydrodynamic Forces

NASA Astrophysics Data System (ADS)

Zhou, Chengzhe; Troian, Sandra

2017-11-01

Micro- and nanopatterning techniques for applications ranging from optoelectronics to biofluidics have multiplied in number over the past decade to include adaptations of mature technologies as well as novel lithographic techniques based on periodic spatial modulation of surface stresses. We focus here on one such technique which relies on shape changes in nanofilms responding to a patterned counter-electrode. The interaction of a patterned electric field with the polarization charges at the liquid interface causes a patterned electrostatic pressure counterbalanced by capillary pressure which leads to 3D protrusions whose shape and evolution can be terminated as needed. All studies to date, however, have investigated the evolution of the liquid film in response to a preset counter-electrode pattern. In this talk, we present solution of the inverse problem for the thin film equation governing the electrohydrodynamic response by treating the system as a transient control problem. Optimality conditions are derived and an efficient corresponding solution algorithm is presented. We demonstrate such implementation of film control to achieve periodic, free surface shapes ranging from simple circular cap arrays to more complex square and sawtooth patterns.

Cytotoxicity Evaluation of Anatase and Rutile TiO₂ Thin Films on CHO-K1 Cells in Vitro.

PubMed

Cervantes, Blanca; López-Huerta, Francisco; Vega, Rosario; Hernández-Torres, Julián; García-González, Leandro; Salceda, Emilio; Herrera-May, Agustín L; Soto, Enrique

2016-07-26

Cytotoxicity of titanium dioxide (TiO₂) thin films on Chinese hamster ovary (CHO-K1) cells was evaluated after 24, 48 and 72 h of culture. The TiO₂ thin films were deposited using direct current magnetron sputtering. These films were post-deposition annealed at different temperatures (300, 500 and 800 °C) toward the anatase to rutile phase transformation. The root-mean-square (RMS) surface roughness of TiO₂ films went from 2.8 to 8.08 nm when the annealing temperature was increased from 300 to 800 °C. Field emission scanning electron microscopy (FESEM) results showed that the TiO₂ films' thickness values fell within the nanometer range (290-310 nm). Based on the results of the tetrazolium dye and trypan blue assays, we found that TiO₂ thin films showed no cytotoxicity after the aforementioned culture times at which cell viability was greater than 98%. Independently of the annealing temperature of the TiO₂ thin films, the number of CHO-K1 cells on the control substrate and on all TiO₂ thin films was greater after 48 or 72 h than it was after 24 h; the highest cell survival rate was observed in TiO₂ films annealed at 800 °C. These results indicate that TiO₂ thin films do not affect mitochondrial function and proliferation of CHO-K1 cells, and back up the use of TiO₂ thin films in biomedical science.

Quantitative evaluation of sputtering induced surface roughness and its influence on AES depth profiles of polycrystalline Ni/Cu multilayer thin films

NASA Astrophysics Data System (ADS)

Yan, X. L.; Coetsee, E.; Wang, J. Y.; Swart, H. C.; Terblans, J. J.

2017-07-01

The polycrystalline Ni/Cu multilayer thin films consisting of 8 alternating layers of Ni and Cu were deposited on a SiO2 substrate by means of electron beam evaporation in a high vacuum. Concentration-depth profiles of the as-deposited multilayered Ni/Cu thin films were determined with Auger electron spectroscopy (AES) in combination with Ar+ ion sputtering, under various bombardment conditions with the samples been stationary as well as rotating in some cases. The Mixing-Roughness-Information depth (MRI) model used for the fittings of the concentration-depth profiles accounts for the interface broadening of the experimental depth profiling. The interface broadening incorporates the effects of atomic mixing, surface roughness and information depth of the Auger electrons. The roughness values extracted from the MRI model fitting of the depth profiling data agrees well with those measured by atomic force microscopy (AFM). The ion sputtering induced surface roughness during the depth profiling was accordingly quantitatively evaluated from the fitted MRI parameters with sample rotation and stationary conditions. The depth resolutions of the AES depth profiles were derived directly from the values determined by the fitting parameters in the MRI model.

Tunable passively Q-switched erbium-doped fiber laser with Chitosan/MoS2 saturable absorber

NASA Astrophysics Data System (ADS)

Ahmad, H.; Aidit, S. N.; Ooi, S. I.; Tiu, Z. C.

2018-07-01

Chitosan, an organic polymer derived from the outer skeletons of crustacean and in the cell wall of fungi is explored as polymer host to develop thin film saturable absorber (SA). As a polymer, Chitosan shows high thermal stability as well as significant transmission characteristics. The highly transparent polymer serves as a good host for SA materials, and a composite Chitosan/MoS2 thin film is demonstrated to successfully generate stable Q-switched lasing output at operating wavelength of 1561.5 nm. At maximum pump power of 280.5 mW, the generated pulse exhibits maximum pulse repetition rate and pulse energy of 79.4 kHz and 43.69 nJ respectively as well as minimum pulse width of 1.02 μs. The overall efficiency of the laser cavity with the Chitosan/MoS2 thin film SA is approximately 0.93%. These results reflect the outstanding performance of Chitosan/MoS2 SA as compared to other MoS2 SA prepared using mechanical exfoliation and optical deposition technique. Moreover, the Chitosan polymer is shown to be a highly potential host in the SA fabrication process due to its promising performance which is comparable to PVA.

Comparison of the agglomeration behavior of thin metallic films on SiO2

NASA Astrophysics Data System (ADS)

Gadkari, P. R.; Warren, A. P.; Todi, R. M.; Petrova, R. V.; Coffey, K. R.

2005-07-01

The stability of continuous metallic thin films on insulating oxide surfaces is of interest to applications such as semiconductor interconnections and gate engineering. In this work, we report the study of the formation of voids and agglomeration of initially continuous Cu, Au, Ru and Pt thin films deposited on amorphous thermally grown SiO2 surfaces. Polycrystalline thin films having thicknesses in the range of 10-100 nm were ultrahigh vacuum sputter deposited on thermally grown SiO2 surfaces. The films were annealed at temperatures in the range of 150-800 °C in argon and argon+3% hydrogen gases. Scanning electron microscopy was used to investigate the agglomeration behavior, and transmission electron microscopy was used to characterize the microstructure of the as-deposited and annealed films. The agglomeration sequence in all of the films is found to follow a two step process of void nucleation and void growth. However, void growth in Au and Pt thin films is different from Cu and Ru thin films. Residual stress and adhesion were observed to play an important part in deciding the mode of void growth in Au and Pt thin films. Last, it is also observed that the tendency for agglomeration can be reduced by encapsulating the metal film with an oxide overlayer.

Photochemical metal organic deposition of metal oxides

NASA Astrophysics Data System (ADS)

Law, Wai Lung (Simon)

This thesis pertains to the study of the deposition of metal oxide thin films via the process of Photochemical Metal Organic Deposition (PMOD). In this process, an amorphous metal organic precursor thin film is subjected to irradiation under ambient conditions. Fragmentation of the metal precursor results from the photoreaction, leading to the formation of metal oxide thin films in the presence of oxygen. The advantage of PMOD lies in its ability to perform lithography of metal oxide thin film without the application of photoresist. The metal organic precursor can be imaged directly by photolysis through a lithography mask under ambient conditions. Thus the PMOD process provides an attractive alternative to the conventional VLSI fabrication process. Metal carboxylates and metal acetylacetonates complexes were used as the precursors for PMOD process in this thesis. Transition metal carboxylate and metal acetylacetonate complexes have shown previously that when deposited as amorphous thin films, they will undergo fragmentation upon photolysis, leading to the formation of metal oxide thin films under ambient conditions. In this thesis, the formation of main group metal oxides of aluminum, indium and tin, as well as the formation of rare-earth metal oxides of cerium and europium by PMOD from its corresponding metal organic precursor will be presented. The nature of the photoreactions as well as the properties of the thin films deposited by PMOD will be investigated. Doped metal oxide thin films can also be prepared using the PMOD process. By mixing the metal precursors prior to deposition in the desired ratio, precursor films containing more than one metal precursor can be obtained. Mixed metal oxide thin films corresponding to the original metal ratio, in the precursor mixture, can be obtained upon photolysis under ambient conditions. In this thesis, the properties of doped metal oxide thin films of europium doped aluminum oxide as well as tin doped indium oxide thin films will also be presented.

Optical Properties and Electrochemical Performance of LiFePO4 Thin Films Deposited on Transparent Current Collectors.

PubMed

Lee, HyunSeok; Yim, Haena; Kim, Kwang-Bum; Choi, Ji-Won

2015-11-01

LiFePO4 thin film cathodes are deposited on various transparent conducting oxide thin films on glass, which are used as cathode current collectors. The XRD patterns show that the thin films have the phase of LiFePO4 with an ordered olivine structure indexed to the orthorhombic Pmna space group. LiFePO4 thin film deposited on various TCO glass substrates exhibits transmittance of about 53%. The initial specific discharge capacities of LiFePO4 thin films are 25.0 μAh/cm2 x μm on FTO, 33.0 μAh/cm2 x μm on ITO, and 13.0 μAh/cm2 x μm on AZO coated glass substrates. Interestingly, the retention capacities of LiFePO4 thin films are 76.0% on FTO, 31.2% on ITO, and 37.7% on AZO coated glass substrates at 20th cycle. The initial specific discharge capacity of the LiFePO4/FTO electrode is slightly lower, but the discharge capacities of the LiFePO4/FTO electrode relatively decrease less than those of the others such as LiFePO4/ITO and LiFePO4/AZO with cycling. The results reported here provide the high transparency of LiFePO4 thin films cathode materials and the good candidate as FTO current collector of the LiFePO4 thin film cathode of transparent thin film rechargeable batteries due to its high transparency and cyclic retention.

Visible photoassisted room-temperature oxidizing gas-sensing behavior of Sn2S3 semiconductor sheets through facile thermal annealing.

PubMed

Liang, Yuan-Chang; Lung, Tsai-Wen; Wang, Chein-Chung

2016-12-01

Well-crystallized Sn 2 S 3 semiconductor thin films with a highly (111)-crystallographic orientation were grown using RF sputtering. The surface morphology of the Sn 2 S 3 thin films exhibited a sheet-like feature. The Sn 2 S 3 crystallites with a sheet-like surface had a sharp periphery with a thickness in a nanoscale size, and the crystallite size ranged from approximately 150 to 300 nm. Postannealing the as-synthesized Sn 2 S 3 thin films further in ambient air at 400 °C engendered roughened and oxidized surfaces on the Sn 2 S 3 thin films. Transmission electron microscopy analysis revealed that the surfaces of the Sn 2 S 3 thin films transformed into a SnO 2 phase, and well-layered Sn 2 S 3 -SnO 2 heterostructure thin films were thus formed. The Sn 2 S 3 -SnO 2 heterostructure thin film exhibited a visible photoassisted room-temperature gas-sensing behavior toward low concentrations of NO 2 gases (0.2-2.5 ppm). By contrast, the pure Sn 2 S 3 thin film exhibited an unapparent room-temperature NO 2 gas-sensing behavior under illumination. The suitable band alignment at the interface of the Sn 2 S 3 -SnO 2 heterostructure thin film and rough surface features might explain the visible photoassisted room-temperature NO 2 gas-sensing responses of the heterostructure thin film on exposure to NO 2 gas at low concentrations in this work.

Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

NASA Astrophysics Data System (ADS)

Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

2018-04-01

In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

Ultrasonic Attenuation of Surface Acoustic Waves in Thin Films of High Transition Temperature Superconducting Niobium-Tin and Niobium-Nitride

NASA Astrophysics Data System (ADS)

Fredricksen, Hans Peter

The ultrasonic attenuation of 600-700 MHz surface acoustic waves by two high T(,c), cubic crystal structure, superconducting thin films has been investigated. The films studied were two, 0.5 (mu) thin, Nb(,3)Sn samples, electron-beam codeposited on LiNbO(,3) and Quartz, and eleven NbN samples from 3 x 10('3) (ANGSTROM) to <(, )200 (ANGSTROM) thin, sputter deposited on LiNbO(,3). The Nb(,3)Sn (Al5 structure) film on Quartz was difficult to measure due to defects in the Quartz caused by the high deposition temperature ((DBLTURN)700(DEGREES)C) used to make the high T(,c) form of the compound. The Nb(,3)Sn film on LiNbO(,3), however, provided information about the transition temperature and energy gap at T = 0 K when the attenuation was measured as a function of temperature in zero magnetic field. A theory is developed to predict the electron-phonon produced normal state attenuation of surface acoustic waves by a thin, loss producing film on a nonattenuating substrate. Using a viscous drag model for the attenuation, the predictions of the theory are compared to the measured normal state attenuation to find the electron mean-free-path for the Nb(,3)Sn film on LiNbO(,3). The attenuation measured for this film as a function of applied magnetic field for four temperatures below T(,c) showed the sample to be an impurity rich type II superconductor with H(,c(,2)) (T = 0 K) = 85 KG, having GLAG theory constants: (kappa)(,2)(t=1) = 28.5 and (kappa)(t=1) = 29.2. The attenuation curves of the nine thickest NbN samples were non-BCS-like and very similar. Measured as a function of temperature only, because we could not reach the high critical fields of the samples, the attenuation showed an initial drop at T(,c) of about 1-2 dB which then leveled off until the temperature was below 0.5 T(,c), where the rate of decrease was much slower than the initial drop. A qualitative description of this behavior is derived from the Kosterlitz-Thouless vortex-antivortex theory. Although the thinnest NbN film did not show an attenuation change at T(,c), the next thinnest did. In this case, the measured decrease of nearly 40 dB is explained by the change in boundary condition when the substrate surface changes from "open" to "shortened" when the film becomes superconducting.

Ferroelectric and piezoelectric thin films and their applications for integrated capacitors, piezoelectric ultrasound transducers and piezoelectric switches

NASA Astrophysics Data System (ADS)

Klee, M.; Boots, H.; Kumar, B.; van Heesch, C.; Mauczok, R.; Keur, W.; de Wild, M.; van Esch, H.; Roest, A. L.; Reimann, K.; van Leuken, L.; Wunnicke, O.; Zhao, J.; Schmitz, G.; Mienkina, M.; Mleczko, M.; Tiggelman, M.

2010-02-01

Ferroelectric and piezoelectric thin films are gaining more and more importance for the integration of high performance devices in small modules. High-K 'Integrated Discretes' devices have been developed, which are based on thin film ferroelectric capacitors integrated together with resistors and ESD protection diodes in a small Si-based chip-scale package. Making use of ferroelectric thin films with relative permittivity of 950-1600 and stacking processes of capacitors, extremely high capacitance densities of 20-520 nF/mm2, high breakdown voltages up to 140 V and lifetimes of more than 10 years at operating voltages of 5 V and 85°C are achieved. Thin film high-density capacitors play also an important role as tunable capacitors for applications such as tuneable matching circuits for RF sections of mobile phones. The performance of thin film tuneable capacitors at frequencies between 1 MHz and 1 GHz is investigated. Finally thin film piezoelectric ultrasound transducers, processed in Si- related processes, are attractive for medical imaging, since they enable large bandwidth (>100%), high frequency operation and have the potential to integrate electronics. With these piezoelectric thin film ultrasound transducers real time ultrasound images have been realized. Finally, piezoelectric thin films are used to manufacture galvanic MEMS switches. A model for the quasi-static mechanical behaviour is presented and compared with measurements.

Synthesis and characterization of lead sulphide thin films from ethanolamine (ETA) complexing agent chemical bath

NASA Astrophysics Data System (ADS)

Gashaw Hone, Fekadu; Dejene, F. B.

2018-02-01

Polycrystalline lead sulphide (PbS) thin films were grown on glass substrates by chemical bath deposition route using ethanolamine (ETA) as a complexing agent. The effects of ETA molar concentration on the structural, morphological, electrical and optical properties of lead sulphide thin films were thoroughly studied. The XRD analyses revealed that all the deposited thin films were face center cubic crystal structure and their preferred orientations were varied along the (111) and (200) planes. The XRD results further confirmed that ETA concentration had a significant effects on the strain, average crystalline size and dislocation density of the deposited thin films. The SEM studies illustrated the evolution and transformation of surface morphology as ETA molar concentration increased from 0.41 M to 1.64 M. The energy dispersive x-ray analysis was used to verify the compositional elements of the deposited thin films. Optical spectroscopy investigation established that the band gap of the PbS thin films were reduced from 0.98 eV to 0.68 eV as ETA concentration increased. The photoluminescence spectra showed a well defined peak at 428 nm and shoulder around 468 nm for all PbS thin films. The electrical resistivity of the thin films found in the order of 103 Ω cm at room temperature and decreased as the ETA molar concentration was increased.

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

NASA Astrophysics Data System (ADS)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

NASA Astrophysics Data System (ADS)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ullal, H. S.; von Roedern, B.

2007-09-01

We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. Inmore » CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.« less

Influence of spray time on the optical and electrical properties of CoNi2S4 thin films

NASA Astrophysics Data System (ADS)

El Radaf, I. M.; Fouad, S. S.; Ismail, A. M.; Sakr, G. B.

2018-04-01

In this paper, a facile spray pyrolysis technique was utilized to synthesize CoNi2S4 thin films. The influence of spray time on the structural, optical and electrical properties of the CoNi2S4 thin films was studied. The x-ray diffraction studies of the CoNi2S4 thin films illustrate that the films exhibit a polycrystalline nature with cubic structure. The values of the lattice strain ε, and the dislocation density δ, were decreased as the spray time increase while the grain size has reverse manner to lattice strain ε, and the dislocation density δ. The transmittance and reflectance spectra of the CoNi2S4 thin films were recorded in the wavelength range of (400–2500) nm to evaluate the optical parameters of the CoNi2S4 thin films. Optical absorption coefficient of CoNi2S4 thin films revealed a presence of a direct energy gap and the values of energy gap were decreased from 1.68 to 1.53 eV as the spray time increases from 15 min to 45 min. The nonlinear refractive index of the CoNi2S4 thin films was increased with increasing of the spray time. The CoNi2S4 thin films exhibit single activation energy and the activation energy was decreased as the spray time increased.

Effect of substrate on texture and mechanical properties of Mg-Cu-Zn thin films

NASA Astrophysics Data System (ADS)

Eshaghi, F.; Zolanvari, A.

2018-04-01

In this work, thin films of Mg-Cu-Zn with 60 nm thicknesses have been deposited on the Si(100), Al, stainless steel, and Cu substrates using DC magnetron sputtering. FESEM images displayed uniformity of Mg-Cu-Zn particles on the different substrates. AFM micrograph revealed the roughness of thin film changes due to the different kinds of the substrates. XRD measurements showed the existence of strong Mg (002) reflections and weak Mg (101) peaks. Residual stress and adhesion force have been measured as the mechanical properties of the Mg-Cu-Zn thin films. The residual stresses of thin films which have been investigated by X-ray diffraction method revealed that the thin films sputtered on the Si and Cu substrates endure minimum and maximum stresses, respectively, during the deposition process. However, the force spectroscopy analysis indicated that the films grew on the Si and Cu experienced maximum and minimum adhesion force. The texture analysis has been done using XRD instrument to make pole figures of Mg (002) and Mg (101) reflections. ODFs have been calculated to evaluate the distribution of the orientations within the thin films. It was found that the texture and stress have an inverse relation, while the texture and the adhesion force of the Mg-Cu-Zn thin films have direct relation. A thin film that sustains the lowest residual stresses and highest adhesive force had the strongest {001} basal fiber texture.

Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

DOEpatents

Brinker, Charles Jeffrey; Prakash, Sai Sivasankaran

1999-01-01

A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

Enhancement on crystallinity property of low annealed PbTiO3 thin films for metal-insulator-metal capacitor

NASA Astrophysics Data System (ADS)

Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

2018-05-01

This study presents the investigation on crystallinity property of PbTiO3 thin films towards metal-insulator-metal capacitor device fabrication. The preparation of the thin films utilizes sol-gel spin coating method with low annealing temperature effect. Hence, structural and electrical characterization is brought to justify the thin films consistency.

Fabrication of ionic liquid electrodeposited Cu--Sn--Zn--S--Se thin films and method of making

DOEpatents

Bhattacharya, Raghu Nath

2016-01-12

A semiconductor thin-film and method for producing a semiconductor thin-films comprising a metallic salt, an ionic compound in a non-aqueous solution mixed with a solvent and processing the stacked layer in chalcogen that results in a CZTS/CZTSS thin films that may be deposited on a substrate is disclosed.

Determining the Elastic Modulus of Compliant Thin Films Supported on Substrates from Flat Punch Indentation Measurements

Treesearch

M.J. Wald; J.M. Considine; K.T. Turner

2013-01-01

Instrumented indentation is a technique that can be used to measure the elastic properties of soft thin films supported on stiffer substrates, including polymer films, cellulosic sheets, and thin layers of biological materials. When measuring thin film properties using indentation, the effect of the substrate must be considered. Most existing models for determining the...

Optical and electrical responses of magnetron-sputtered amorphous Nb-doped TiO2 thin films annealed at low temperature

NASA Astrophysics Data System (ADS)

Quynh, Luu Manh; Tien, Nguyen Thi; Thanh, Pham Van; Hieu, Nguyen Minh; Doanh, Sai Cong; Thuat, Nguyen Tran; Tuyen, Nguyen Viet; Luong, Nguyen Hoang; Hoang, Ngoc Lam Huong

2018-03-01

Nb-doped TiO2 (TNO) thin films were prepared by annealing at 300 °C for 30 min after a magnetron-sputter process. A laser-irradiated post-annealing Raman scattering analysis indirectly showed the possible formation of small size anatase TNO clusters within the thin film matrix Although the TNO thin films were not crystallized, oxygen vacancies were created by adding H2 into the sputter gas during the deposition process. This improved the conductivity and carrier concentration of the thin films. As the ratio of H2 in sputter gas is f(H2) = [H2/Ar+H2] = 10%, the carrier concentration of the amorphous TNO thin film reached 1022 (cm-3) with the resistivity being about 10-2 (Ω.cm). Even though a new methodology to decrease the fabrication temperature is not presented; this study demonstrates an efficient approach to shorten the annealing process, which ends prior to the crystallization of the thin films. Besides, in situ H2 addition into the sputter atmosphere is proven to be a good solution to enhance the electrical conductivity of semiconductor thin films like TNOs, despite the fact that they are not well crystallized.

Structural and optical properties of cobalt doped multiferroics BiFeO3 nanostructure thin films

NASA Astrophysics Data System (ADS)

Prasannakumara, R.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and Cobalt doped BiFeO3 (BiFe1-XCoXO3) nanostructure thin films were deposited on glass substrates by the sol-gel spin coating method. The X-ray diffraction patterns (XRD) of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films showed distorted rhombohedral structure. The shifting of peaks to higher angles was observed in cobalt doped BiFeO3. The surface morphology of the BiFeO3 and BiFe1-XCoXO3 nanostructure thin films were studied using FESEM, an increase in grain size was observed as Co concentration increases. The thickness of the nanostructure thin films was examined using FESEM cross-section. The EDX studies confirmed the elemental composition of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films. The optical characterizations of the grown nanostructure thin films were carried out using FTIR, it confirms the existence of Fe-O and Bi-O bands and UV-Visible spectroscopy shows the increase in optical band gap of the BiFeO3 nanostructure thin films with Co doping by ploting Tauc plot.

Calculation of optical band gaps of a-Si:H thin films by ellipsometry and UV-Vis spectrophotometry

NASA Astrophysics Data System (ADS)

Qiu, Yijiao; Li, Wei; Wu, Maoyang; Fu, Junwei; Jiang, Yadong

2010-10-01

Hydrogenated amorphous silicon (a-Si:H) thin films doped with Phosphorus (P) and Nitrogen (N) were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical band gaps of the thin films obtained through either changing the gas pressure (P-doped only) or adulterating nitrogen concentration (with fixed P content) were investigated by means of Ellipsometric and Ultraviolet-Visible (UV-Vis) spectroscopy, respectively. Tauc formula was used in calculating the optical band gaps of the thin films in both methods. The results show that Ellipsometry and UV-Vis spectrophotometry can be applied in the research of the optical properties of a-Si:H thin films experimentally. Both methods reflect the variation law of the optical band gaps caused by CVD process parameters, i.e., the optical band gap of the a-Si:H thin films is increased with the rise of the gas pressure or the nitrogen concentration respectively. The difference in optical band gaps of the doped a-Si:H thin films calculated by Ellipsometry or UV-Vis spectrophotometry are not so great that they both can be used to measure the optical band gaps of the thin films in practical applications.

Nanostructure and strain effects in active thin films for novel electronic device applications

NASA Astrophysics Data System (ADS)

Yuan, Zheng

2007-12-01

There are many potential applications of ferroelectric thin films that take advantage of their unique dielectric and piezoelectric properties, such as tunable microwave devices and thin-film active sensors for structural health monitoring (SHM). However, many technical issues still restrict practical applications of ferroelectric thin films, including high insertion loss, limited figure of merit, soft mode effect, large temperature coefficients, and others. The main theme of this thesis is the advanced technique developments, and the new ferroelectric thin films syntheses and investigations for novel device applications. A novel method of additional doping has been adopted to (Ba,Sr)TiO 3 (BSTO) thin films on MgO. By introducing 2% Mn into the stoichiometric BSTO, Mn:BSTO thin films have shown a greatly enhanced dielectric tunability and a reduced insertion loss at high frequencies (10-30 GHz). A new record of a large tunability of 80% with a high dielectric constant of 3800 and an extra low dielectric loss of 0.001 at 1 MHz at room-temperature was achieved. Meanwhile, the new highly epitaxial ferroelectric (Pb,Sr)TiO3 (PSTO) thin films have been synthesized on (001) MgO substrates. PSTO films demonstrated excellent high frequency dielectric properties with high dielectric constants above 1420 and large dielectric tunabilities above 34% at room-temperature up to 20 GHz. In addition, a smaller temperature coefficient from 80 K to 300 K was observed in PSTO films compared to BSTO films. These results indicate that the Mn:BSTO and PSTO films are both good candidates for developing room-temperature tunable microwave devices. Furthermore, crystalline ferroelectric BaTiO3 (BTO) thin films have been deposited directly on metal substrate Ni through a unique in-situ substrate pre-oxidation treatment. The highly oriented nanopillar structural BTO films were grown on the buffered layers created by the pre-oxidation treatment. No interdiffusion or reaction was observed at the interface. As-grown BTO films demonstrated good ferroelectric properties and an extremely large piezoelectric response of 130 (x 10-12 C/N). These excellent preliminary results enable the long-term perspective on the unobtrusive ferroelectric thin-film active sensors for SHM applications.

In-situ ellipsometry: applications to thin film research, development, and production

NASA Astrophysics Data System (ADS)

Kief, Mark T.

1999-07-01

Many industries including the optics industry, semiconductor industry, and magnetic storage industry are deeply rooted in the science and technology of the film materials and thin film based devices. Research in novel thin film systems and the engineering of artificial structures increasingly requires a control on the atomic scale in both thickness and lateral order. Development of the deposition and fabrication processes for these thin film structures requires technical sophistication and efficiency combined with an understanding of the multi-faceted process interactions. The production of these materials necessitates a remarkable degree of control to minimize scrap and assure good performance. Furthermore, in today's industry these operations must occur at an ever accelerating pace. In this article, we will review one technique which can make these challenges more tractable-- insitu ellipsometry. This is a very powerful tool which is capable of characterizing thin film processes in real-time. We review the art and illustrate with novel applications to metal thin film growth. In addition, we will illustrate how information obtained with insitu ellipsometry can predict the end use thin film properties such as the transport properties. In conclusion, further advances in insitu ellipsometry and its applications will be discussed in terms of needs and trends as a tool for thin film research, development and production.

Effect of cadmium incorporation on the properties of zinc oxide thin films

NASA Astrophysics Data System (ADS)

Bharath, S. P.; Bangera, Kasturi V.; Shivakumar, G. K.

2018-02-01

Cd x Zn1- x O (0 ≤ x ≤ 0.20) thin films are deposited on soda lime glass substrates using spray pyrolysis technique. To check the thermal stability, Cd x Zn1- x O thin films are subjected to annealing. Both the as-deposited and annealed Cd x Zn1- x O thin films are characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and energy-dispersive X-ray analysis (EDAX) to check the structural, surface morphological and compositional properties, respectively. XRD analysis reveals that the both as-deposited and annealed Cd x Zn1- x O thin films are (002) oriented with wurtzite structure. SEM studies confirm that as-deposited, as well as annealed Cd x Zn1- x O thin films are free from pinholes and cracks. Compositional analysis shows the deficiency in Cd content after annealing. Optical properties evaluated from UV-Vis spectroscopy shows red shift in the band gap for Cd x Zn1- x O thin films. Electrical property measured using two probe method shows a decrease in the resistance after Cd incorporation. The results indicate that cadmium can be successfully incorporated in zinc oxide thin films to achieve structural changes in the properties of films.

Thiophene fused azacoronenes: regioselective synthesis, self organization, charge transport, and its incorporation in conjugated polymers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yi; He, Bo

A regioselective synthesis of an azacoronene fused with two peripheral thiophene groups has been realized through a concise synthetic route. The resulting thienoazacoronene (TAC) derivatives show high degree of self-organization in solution, in single crystals, in the bulk, and in spuncast thin films. Spuncast thin film field-effect transistors of the TACs exhibited mobilities up to 0.028 cm.sup.2V.sup.-1 S.sup.-1, which is among the top field effect mobilities for solution processed discotic materials. Organic photovoltaic devices using TAC-containing conjugated polymers as the donor material exhibited a high open-circuit voltage of 0.89 V, which was ascribable to TAC's low-lying highest occupied molecular orbitalmore » energy level.« less

Surface-plasmon-polariton hybridized cavity modes in submicrometer slits in a thin Au film

NASA Astrophysics Data System (ADS)

Walther, R.; Fritz, S.; Müller, E.; Schneider, R.; Maniv, T.; Cohen, H.; Matyssek, C.; Busch, K.; Gerthsen, D.

2016-06-01

The excitation of cavity standing waves in double-slit structures in thin gold films, with slit lengths between 400 and 2560 nm, was probed with a strongly focused electron beam in a transmission electron microscope. The energies and wavelengths of cavity modes up to the 11 th mode order were measured with electron energy loss spectroscopy to derive the corresponding dispersion relation. For all orders, a significant redshift of mode energies accompanied by a wavelength elongation relative to the expected resonator energies and wavelengths is observed. The resultant dispersion relation is found to closely follow the well-known dispersion law of surface-plasmon polaritons (SPPs) propagating on a gold/air interface, thus providing direct evidence for the hybridized nature of the detected cavity modes with SPPs.

Methods for preparing colloidal nanocrystal-based thin films

DOEpatents

Kagan, Cherie R.; Fafarman, Aaron T.; Choi, Ji-Hyuk; Koh, Weon-kyu; Kim, David K.; Oh, Soong Ju; Lai, Yuming; Hong, Sung-Hoon; Saudari, Sangameshwar Rao; Murray, Christopher B.

2016-05-10

Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

Swift heavy ion induced modifications in optical and electrical properties of cadmium selenide thin films

NASA Astrophysics Data System (ADS)

Choudhary, Ritika; Chauhan, Rishi Pal

2017-07-01

The modification in various properties of thin films using high energetic ion beam is an exciting area of basic and applied research in semiconductors. In the present investigations, cadmium selenide (CdSe) thin films were deposited on ITO substrate using electrodeposition technique. To study the swift heavy ion (SHI) induced effects, the deposited thin films were irradiated with 120 MeV heavy Ag9+ ions using pelletron accelerator facility at IUAC, New Delhi, India. Structural phase transformation in CdSe thin film from metastable cubic phase to stable hexagonal phase was observed after irradiation leading to decrease in the band gap from 2.47 eV to 2.12 eV. The phase transformation was analyzed through X-ray diffraction patterns. During SHI irradiation, Generation of high temperature and pressure by thermal spike along the trajectory of incident ions in the thin films might be responsible for modification in the properties of thin films.[Figure not available: see fulltext.

Young's modulus measurement of aluminum thin film with cantilever structure

NASA Astrophysics Data System (ADS)

Lee, ByoungChan; Lee, SangHun; Lee, Hwasu; Shin, Hyungjae

2001-09-01

Micromachined cantilever structures are commonly used for measuring mechanical properties of thin film materials in MEMS. The application of conventional cantilever theory in experiment raises severe problem. The deformation of the supporting post and flange is produced by the applied electrostatic force and lead to more reduced measurement value than real Young's modulus of thin film materials. In order to determine Young's modulus of aluminum thin film robustly and reproducibly, the modified cantilever structure is proposed. Two measurement methods, which are cantilever tip deflection measurement and resonant frequency measurement, are used for confirming the reliability of the proposed cantilever structure as well. Measured results indicate that the proposed measurement scheme provides useful and credible Young's modulus value for thin film materials with sub-micron thickness. The proved validation of the proposed scheme makes sure that in addition to Young's modulus of aluminum thin film, that of other thin film materials which are aluminum alloy, metal, and so forth, can be extracted easily and clearly.

Printable CIGS thin film solar cells

NASA Astrophysics Data System (ADS)

Fan, Xiaojuan

2014-03-01

Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

Modified lead titanate thin films for pyroelectric infrared detectors on gold electrodes

NASA Astrophysics Data System (ADS)

Ahmed, Moinuddin; Butler, Donald P.

2015-07-01

Pyroelectric infrared detectors provide the advantage of both a wide spectral response and dynamic range, which also has enabled systems to be developed with reduced size, weight and power consumption. This paper demonstrates the deposition of lead zirconium titanate (PZT) and lead calcium titanate (PCT) thin films for uncooled pyroelectric detectors with the utilization of gold electrodes. The modified lead titanate thin films were deposited by pulsed laser deposition on gold electrodes. The PZT and PCT thins films deposited and annealed at temperatures of 650 °C and 550 °C respectively demonstrated the best pyroelectric performance in this work. The thin films displayed a pyroelectric effect that increased with temperature. Poling of the thin films was carried out for a fixed time periods and fixed dc bias voltages at elevated temperature in order to increase the pyroelectric coefficient by establishing a spontaneous polarization of the thin films. Poling caused the pyroelectric current to increase one order of magnitude.

Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.

PubMed

Jo, Seo-Hyeon; Lee, Sung-Gap; Lee, Young-Hie

2012-01-05

In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.

Structure and electrical properties of Pb(ZrxTi1-x)O3 deposited on textured Pt thin films

NASA Astrophysics Data System (ADS)

Hong, Jongin; Song, Han Wook; Lee, Hee Chul; Lee, Won Jong; No, Kwangsoo

2001-08-01

The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr, Ti)O3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 600 °C by rf magnetron sputtering. As the thickness of platinum (Pt) thin film increased, the preferred orientation of Pt thin film changed from (200) to (111). PZT thin films were fabricated at 450 °C by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C-V characteristics, P-E characteristics, and fatigue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films having different texturing was discussed in terms-of the x-y alignment and the interface between electrode and PZT in MFM capacitors.

Exceptional Morphology-Preserving Evolution of Formamidinium Lead Triiodide Perovskite Thin Films via Organic-Cation Displacement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yuanyuan; Yang, Mengjin; Pang, Shuping

Here we demonstrate a radically different chemical route for the creation of HC(NH2)2PbI3 (FAPbI3) perovskite thin films. This approach entails a simple exposure of as-synthesized CH3NH3PbI3 (MAPbI3) perovskite thin films to HC(=NH)NH2 (formamidine or FA) gas at 150 degrees C, which leads to rapid displacement of the MA+ cations by FA+ cations in the perovskite structure. The resultant FAPbI3 perovskite thin films preserve the microstructural morphology of the original MAPbI3 thin films exceptionally well. Importantly, the myriad processing innovations that have led to the creation of high-quality MAPbI3 perovskite thin films are directly adaptable to FAPbI3 through this simple, rapidmore » chemical-conversion route. Accordingly, we show that efficiencies of perovskite solar cells fabricated with FAPbI3 thin films created using this route can reach -18%.« less

Experimental Study of Acid Treatment Toward Characterization of Structural, Optical, and Morphological Properties of TiO2-SnO2 Composite Thin Film

NASA Astrophysics Data System (ADS)

Fajar, M. N.; Hidayat, R.; Triwikantoro; Endarko

2018-04-01

The TiO2-SnO2 thin film with single and double-layer structure has successfully synthesized on FTO (Fluorine-doped Tin Oxide) substrate using the screen printing technique. The structural, optical, and morphological properties of the film were investigated by XRD, UV-Vis, and SEM, respectively. The results showed that the single and double-layer structure of TiO2-SnO2 thin film has mixed phase with a strong formation of casseritte phase. The acid treatment effect on TiO2-SnO2 thin film decreases the peak intensity of anatase phase formation and thin film’s absorbance values. The morphological study is also revealed that the single layer TiO2-SnO2 thin film had a more porous nature and decreased particle size distribution after acid treatment, while the double-layer TiO2-SnO2 thin film Eroded due to acid treatment.

Structural and morphological study on ZnO:Al thin films grown using DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Astuti, B.; Sugianto; Mahmudah, S. N.; Zannah, R.; Putra, N. M. D.; Marwoto, P.; Aryanto, D.; Wibowo, E.

2018-03-01

ZnO doped Al (ZnO:Al ) thin film was deposited on corning glass substrate using DC magnetron sputtering method. Depositon process of the ZnO:Al thin films was kept constant at plasma power, deposition temperature and deposition time are 40 watt, 400°C and 2 hours, respectivelly. Furthermore, for annealing process has been done on the variation of oxygen pressure are 0, 50, and 100 mTorr. X-ray diffraction (XRD), and SEM was used to characterize ZnO:Al thin film was obtained. Based on XRD characterization results of the ZnO:Al thin film shows that deposited thin film has a hexagonal structure with the dominant diffraction peak at according to the orientation of the (002) plane and (101). Finally, the crystal structure of the ZnO:Al thin films that improves with an increasing the oxygen pressure at annealing process up to 100 mTorr and its revealed by narrow FWHM value and also with dense crystal structure.

Depth profiling of superconducting thin films using rare gas ion sputtering with laser postionization

NASA Astrophysics Data System (ADS)

Pallix, J. B.; Becker, C. H.; Missert, N.; Char, K.; Hammond, R. H.

1988-02-01

Surface analysis by laser ionization (SALI) has been used to examine a high-Tc superconducting thin film of nominal composition YBa2Cu3O7 deposited on SrTiO3 (100) by reactive magnetron sputtering. The main focus of this work was to probe the compositional uniformity and the impurity content throughout the 1800 Å thick film having critical current densities of 1 to 2×106 A/cm2. SALI depth profiles show this film to be more uniform than thicker films (˜1 μm, prepared by electron beam codeposition) which were studied previously, yet the data show that some additional (non-superconducting) phases derived from Y, Ba, Cu, and O are still present. These additional phases are studied by monitoring the atomic and diatomic-oxide photoion profiles and also the depth profiles of various clusters (e.g. Y2O2+, Y2O3+, Y3O4+, Ba2O+, Ba2O2+, BaCu+, BaCuO+, YBaO2+, YSrO2+, etc.). A variety of impurities are observed to occur throughout the film including rather large concentrations of Sr. Hydroxides, F, Cl, and COx are evident particularly in the sample's near surface region (the top ˜100 Å).

Full-field measurement of surface topographies and thin film stresses at elevated temperatures by digital gradient sensing method.

PubMed

Zhang, Changxing; Qu, Zhe; Fang, Xufei; Feng, Xue; Hwang, Keh-Chih

2015-02-01

Thin film stresses in thin film/substrate systems at elevated temperatures affect the reliability and safety of such structures in microelectronic devices. The stresses result from the thermal mismatch strain between the film and substrate. The reflection mode digital gradient sensing (DGS) method, a real-time, full-field optical technique, measures deformations of reflective surface topographies. In this paper, we developed this method to measure topographies and thin film stresses of thin film/substrate systems at elevated temperatures. We calibrated and compensated for the air convection at elevated temperatures, which is a serious problem for optical techniques. We covered the principles for surface topography measurements by the reflection mode DGS method at elevated temperatures and the governing equations to remove the air convection effects. The proposed method is applied to successfully measure the full-field topography and deformation of a NiTi thin film on a silicon substrate at elevated temperatures. The evolution of thin film stresses obtained by extending Stoney's formula implies the "nonuniform" effect the experimental results have shown.

A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

NASA Astrophysics Data System (ADS)

Adelifard, Mehdi; Darudi, Hosein

2016-07-01

There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

Computational Study of In-Plane Phonon Transport in Si Thin Films

PubMed Central

Wang, Xinjiang; Huang, Baoling

2014-01-01

We have systematically investigated the in-plane thermal transport in Si thin films using an approach based on the first-principles calculations and lattice dynamics. The effects of phonon mode depletion induced by the phonon confinement and the corresponding variation in interphonon scattering, which may be important for the thermal conductivities of ultra-thin films but are often neglected in precedent studies, are considered in this study. The in-plane thermal conductivities of Si thin films with different thicknesses have been predicted over a temperature range from 80 K to 800 K and excellent agreements with experimental results are found. The validities of adopting the bulk phonon properties and gray approximation of surface specularity in thin film studies have been clarified. It is found that in ultra-thin films, while the phonon depletion will reduce the thermal conductivity of Si thin films, its effect is largely offset by the reduction in the interphonon scattering rate. The contributions of different phonon modes to the thermal transport and isotope effects in Si films with different thicknesses under various temperatures are also analyzed. PMID:25228061

Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aryanto, Didik, E-mail: didi027@lipi.go.id; Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah; Marwoto, Putut

Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtainedmore » at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.« less

Magnetoelastic Properties of Magnetic Thin Films Using the Magnetooptic Kerr Effect

NASA Astrophysics Data System (ADS)

Mayo, Elizabeth; Lederman, David

1998-03-01

The magnetoelastic properties of Co and Fe thin films were measured using the magnetooptic Kerr effect (MOKE). Films were grown via magnetron sputtering on thin mica substrates. Magnetization loops were measured using MOKE with the magnetic field along different in-plane directions. Subsequently, the samples were mounted on a cylindrical sample holder, which imposed a well-defined strain to the film. This caused the magnetization loops to change dramatically due to the magnetoelastic coefficient of the thin film materials. The effects of the surface roughness and film thickness will also be discussed.

Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films

PubMed Central

Petsagkourakis, Ioannis; Pavlopoulou, Eleni; Portale, Giuseppe; Kuropatwa, Bryan A.; Dilhaire, Stefan; Fleury, Guillaume; Hadziioannou, Georges

2016-01-01

Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. PEDOT:Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the PEDOT:Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK2 has been readily obtained for PEDOT:Tos thin films following this methodology. PMID:27470637

Plasma impact on structural, morphological and optical properties of copper acetylacetonate thin films

NASA Astrophysics Data System (ADS)

Abdel-Khalek, H.; El-Samahi, M. I.; El-Mahalawy, Ahmed M.

2018-06-01

The influence of plasma exposure on structural, morphological and optical properties of copper (II) acetylacetonate thin films deposited by thermal evaporation technique was investigated. Copper (II) acetylacetonate as-grown thin films were exposed to the atmospheric plasma for different times. The exposure of as-grown cu(acac)2 thin film to atmospheric plasma for 5 min modified its structural, morphological and optical properties. The effect of plasma exposure on structure and roughness of cu(acac)2 thin films was evaluated by XRD and AFM techniques, respectively. The XRD results showed an increment in crystallinity due to exposure for 5 min, but, when the exposure time reaches 10 min, the film was transformed to an amorphous state. The AFM results revealed a strong modification of films roughness when the average roughness decreased from 63.35 nm to 1 nm as a result of interaction with plasma. The optical properties of as-grown and plasma exposured cu(acac)2 thin films were studied using spectrophotometric method. The exposure of cu(acac)2 thin films to plasma produced the indirect energy gap decrease from 3.20 eV to 2.67 eV for 10 min exposure time. The dispersion parameters were evaluated in terms of single oscillator model for as-grown and plasma exposured thin films. The influence of plasma exposure on third order optical susceptibility was studied.

Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

NASA Astrophysics Data System (ADS)

Ahmadipour, Mohsen; Ain, Mohd Fadzil; Ahmad, Zainal Arifin

2016-11-01

In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV-vis spectrophotometer and current-voltage (I-V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30-90% relative humidity (RH).

Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films.

PubMed

Petsagkourakis, Ioannis; Pavlopoulou, Eleni; Portale, Giuseppe; Kuropatwa, Bryan A; Dilhaire, Stefan; Fleury, Guillaume; Hadziioannou, Georges

2016-07-29

Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK(2) has been readily obtained for Tos thin films following this methodology.

Biocorrosion investigation of two shape memory nickel based alloys: Ni-Mn-Ga and thin film NiTi.

PubMed

Stepan, L L; Levi, D S; Gans, E; Mohanchandra, K P; Ujihara, M; Carman, G P

2007-09-01

Thin film nitinol and single crystal Ni-Mn-Ga represent two new shape memory materials with potential to be used as percutaneously placed implant devices. However, the biocompatibility of these materials has not been adequately assessed. Immersion tests were conducted on both thin film nitinol and single crystal Ni-Mn-Ga in Hank's balanced salt solution at 37 degrees C and pH 7.4. After 12 h, large pits were found on the Ni-Mn-Ga samples while thin film nitinol displayed no signs of corrosion. Further electrochemical tests on thin film nitinol samples revealed breakdown potentials superior to a mechanically polished nitinol disc. These results suggest that passivation or electropolishing of thin film nitinol maybe unnecessary to promote corrosion resistance.

Multi-layer assemblies with predetermined stress profile and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2003-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Thin Film Physical Sensor Instrumentation Research and Development at NASA Glenn Research Center

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Fralick, Gustave C.

2006-01-01

A range of thin film sensor technology has been demonstrated enabling measurement of multiple parameters either individually or in sensor arrays including temperature, strain, heat flux, and flow. Multiple techniques exist for refractory thin film fabrication, fabrication and integration on complex surfaces and multilayered thin film insulation. Leveraging expertise in thin films and high temperature materials, investigations for the applications of thin film ceramic sensors has begun. The current challenges of instrumentation technology are to further develop systems packaging and component testing of specialized sensors, further develop instrumentation techniques on complex surfaces, improve sensor durability, and to address needs for extreme temperature applications. The technology research and development ongoing at NASA Glenn for applications to future launch vehicles, space vehicles, and ground systems is outlined.

Optical, mechanical and structural properties of PMMA/SiO2 nanocomposite thin films

NASA Astrophysics Data System (ADS)

Soni, Gyanesh; Srivastava, Subodh; Soni, Purushottam; Kalotra, Pankaj; Vijay, Y. K.

2018-01-01

We have fabricated PMMA/SiO2 nanocomposite flexible thin films of 60 μm thicknesses by using solution casting method in the presence of transverse electric field. In this paper, we have investigated the effect of SiO2 nanoparticle (NP) loading on optical and mechanical properties of the composite thin film. The SEM images show that nanocomposite thin films have a smoother and uniform morphology. The transmittance peak near 1103 cm-1 in FT-IR spectrum confirms the presence of SiO2 NPs in the composite thin film. It is observed that optical bandgap decreases with an increase in the SiO2 NP concentration. Dynamic mechanical analysis shows that presence of SiO2 NP enhances the mechanical strength of the composite thin film.

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

NASA Astrophysics Data System (ADS)

Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

2013-03-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Oxygen vacancy induced room temperature ferromagnetism in (In1-xNix)2O3 thin films

NASA Astrophysics Data System (ADS)

Chakraborty, Deepannita; Kaleemulla, S.; Kuppan, M.; Rao, N. Madhusudhana; Krishnamoorthi, C.; Omkaram, I.; Reddy, D. Sreekantha; Rao, G. Venugopal

2018-05-01

Nickel doped indium oxide thin films (In1-xNix)2O3 at x = 0.00, 0.03, 0.05 and 0.07 were deposited onto glass substrates by electron beam evaporation technique. The deposited thin films were subjected to annealing in air at 250 °C, 350 °C and 450 °C for 2 h using high temperature furnace. A set of films were vacuum annealed at 450 °C to study the role of oxygen on magnetic properties of the (In1-xNix)2O3 thin films. The thin films were subjected to different characterization techniques to study their structural, chemical, surface, optical and magnetic properties. All the synthesized air annealed and vacuum annealed films exhibit body centered cubic structure without any secondary phases. No significant change in the diffraction peak position, either to lower or higher diffraction angles has been observed. The band gap of the films decreased from 3.73 eV to 3.63 eV with increase of annealing temperature from 250 °C to 450 °C, in the presence of air. From a slight decrease in strength of magnetization to a complete disappearance of hysteresis loop has been observed in pure In2O3 thin films with increasing the annealing temperature from 250 °C to 450 °C, in the presence of air. The (In1-xNix)2O3 thin films annealed under vacuum follow a trend of enhancement in the strength of magnetization to increase in temperature from 250 °C to 450 °C. The hysteresis loop does not disappear at 450 °C in (In1-xNix)2O3 thin films, as observed in the case of pure In2O3 thin films.

Gas Permeation in Thin Glassy Polymer Films

NASA Astrophysics Data System (ADS)

Paul, Donald

2011-03-01

The development of asymmetric and composite membranes with very thin dense ``skins'' needed to achieve high gas fluxes enabled the commercial use of membranes for molecular level separations. It has been generally assumed that these thin skins, with thicknesses of the order of 100 nm, have the same permeation characteristics as films with thicknesses of 25 microns or more. Thick films are easily made in the laboratory and have been used extensively for measuring permeation characteristics to evaluate the potential of new polymers for membrane applications. There is now evidence that this assumption can be in very significant error, and use of thick film data to select membrane materials or predict performance should be done with caution. This presentation will summarize our work on preparing films of glassy polymers as thin as 20 nm and characterizing their behavior by gas permeation, ellipsometry and positron annihilation lifetime spectroscopy. Some of the most important polymers used commercially as gas separation membranes, i.e., Matrimid polyimide, polysulfone (PSF) and poly(2,6-dimethyl-1,4-phenylene oxide) (PPO), have been made into well-defined thin films in our laboratories by spin casting techniques and their properties studied using the techniques we have developed. These thin films densify (or physically age) much faster than thicker films, and, as result, the permeability decreases, sometimes by several-fold over weeks or months for thin films. This means that the properties of these thin films can be very different from bulk films. The techniques, interpretations and implications of these observations will be discussed. In a broader sense, gas permeation measurements can be a powerful way of developing a better understanding of the effects of polymer chain confinement and/or surface mobility on the behavior of thin films.

SHI irradiation effect on pure and Mn doped ZnO thin films

NASA Astrophysics Data System (ADS)

Khawal, H. A.; Raskar, N. D.; Dole, B. N.

2017-05-01

Investigated the structural, surface, electrical and modifications induced by Swift Heavy Ions (SHI) irradiation on pure and Mn substituted ZnO thin films were observed. Thin films of Zn1-xMnxO (x = 0.00, 0.04) were synthesized using the dip coating technique. All thin films irradiated by Li3+ swift heavy ions with fluence 5 × 1013 ions/cm2. The XRD peak reveals that all the samples exhibit wurtzite structures. Surface morphology of samples was investigated by SEM, it was observed that pristine samples of ZnO thin film shows spherical shape but for 4 % Mn substituted ZnO thin film with 5 × 1013 ions/cm2 fluence, it reveals that big grain spherical morphology like structure respectively. I-V characteristics were recorded in the voltage range -5 to 5 V. All curves were passed through origin and nearly linear exhibit ohmic in nature for the films.

Influence of substrate temperatures on the properties of GdF(3) thin films with quarter-wave thickness in the ultraviolet region.

PubMed

Jin, Jingcheng; Jin, Chunshui; Li, Chun; Deng, Wenyuan; Yao, Shun

2015-06-01

High-quality coatings of fluoride materials are in extraordinary demand for use in deep ultraviolet (DUV) lithography. Gadolinium fluoride (GdF₃) thin films were prepared by a thermal boat evaporation process at different substrate temperatures. GdF₃ thin film was set at quarter-wave thickness (∼27  nm) with regard to their common use in DUV/vacuum ultraviolet optical stacks; these thin films may significantly differ in nanostructural properties at corresponding depositing temperatures, which would crucially influence the performance of the multilayers. The measurement and analysis of optical, structural, and mechanical properties of GdF₃ thin films have been performed in a comprehensive characterization cycle. It was found that depositing GdF₃ thin films at relative higher temperature would form a rather dense, smooth, homogeneous structure within this film thickness scale.

Examining the validity of Stoney-equation for in-situ stress measurements in thin film electrodes using a large-deformation finite-element procedure

NASA Astrophysics Data System (ADS)

Wen, Jici; Wei, Yujie; Cheng, Yang-Tse

2018-05-01

During the lithiation and delithiation of a thin film electrode, stress in the electrode is deduced from the curvature change of the film using the Stoney equation. The accuracy of such a measurement is conditioned on the assumptions that (a) the mechanical properties of the electrode remain unchanged during lithiation and (b) small deformation holds. Here, we demonstrate that the change in elastic properties can influence the measurement of the stress in thin film electrodes. We consider the coupling between diffusion and deformation during lithiation and delithiation of thin film electrodes and implement the constitutive behavior in a finite-deformation finite element procedure. We demonstrate that both the variation in elastic properties in thin film electrodes and finite-deformation during lithiation and delithiation would challenge the applicability of the Stoney-equation for in-situ stress measurements of thin film electrodes.

[Study on anti-coagulant property of radio frequency sputtering nano-sized TiO2 thin films].

PubMed

Tang, Xiaoshan; Li, Da

2010-12-01

Nano-TiO2 thin films were prepared by Radio frequency (RF) sputtering on pyrolytic carbon substrates. The influences of sputtering power on the structure and the surface morphology of TiO2 thin films were investigated by X-ray diffraction (XRD), and by scanning electron microscopy (SEM). The results show that the TiO2 films change to anatase through the optimum of sputtering power. The mean diameter of nano-particle is about 30 nm. The anti-coagulant property of TiO2 thin films was observed through platelet adhesion in vitro. The result of experiment reveals the amount of thrombus on the TiO2 thin films being much less than that on the pyrolytic carbon. It also indicates that the RF sputtering Nano-sized TiO2 thin films will be a new kind of promising materials applied to artificial heart valve and endovascular stent.

Pulsed photonic fabrication of nanostructured metal oxide thin films

NASA Astrophysics Data System (ADS)

Bourgeois, Briley B.; Luo, Sijun; Riggs, Brian C.; Adireddy, Shiva; Chrisey, Douglas B.

2017-09-01

Nanostructured metal oxide thin films with a large specific surface area are preferable for practical device applications in energy conversion and storage. Herein, we report instantaneous (milliseconds) photonic synthesis of three-dimensional (3-D) nanostructured metal oxide thin films through the pulsed photoinitiated pyrolysis of organometallic precursor films made by chemical solution deposition. High wall-plug efficiency-pulsed photonic irradiation (xenon flash lamp, pulse width of 1.93 ms, fluence of 7.7 J/cm2 and frequency of 1.2 Hz) is used for scalable photonic processing. The photothermal effect of subsequent pulses rapidly improves the crystalline quality of nanocrystalline metal oxide thin films in minutes. The following paper highlights pulsed photonic fabrication of 3-D nanostructured TiO2, Co3O4, and Fe2O3 thin films, exemplifying a promising new method for the low-cost and high-throughput manufacturing of nanostructured metal oxide thin films for energy applications.

a Brief Survey on Basic Properties of Thin Films for Device Application

NASA Astrophysics Data System (ADS)

Rao, M. C.; Shekhawat, M. S.

Thin film materials are the key elements of continued technological advances made in the fields of optoelectronic, photonic and magnetic devices. Thin film studies have directly or indirectly advanced many new areas of research in solid state physics and chemistry which are based on phenomena uniquely characteristic of the thickness, geometry and structure of the film. The processing of materials into thin films allows easy integration into various types of devices. Thin films are extremely thermally stable and reasonably hard, but they are fragile. On the other hand organic materials have reasonable thermal stability and are tough, but are soft. Thin film mechanical properties can be measured by tensile testing of freestanding films and by the micro beam cantilever deflection technique, but the easiest way is by means of nanoindentation. Optical experiments provide a good way of examining the properties of semiconductors. Particularly measuring the absorption coefficient for various energies gives information about the band gaps of the material. Thin film materials have been used in semiconductor devices, wireless communications, telecommunications, integrated circuits, rectifiers, transistors, solar cells, light-emitting diodes, photoconductors and light crystal displays, lithography, micro- electromechanical systems (MEMS) and multifunctional emerging coatings, as well as other emerging cutting technologies.

Thin films composed of multiwalled carbon nanotubes, gold nanoparticles and myoglobin for humidity detection at room temperature.

PubMed

Qi, Zhi-mei; Wei, Mingdeng; Honma, Itaru; Zhou, Haoshen

2007-02-02

Optically transparent and electrically conductive nanocomposite thin films consisting of multiwalled carbon nanotubes (MWCNTs), gold nanoparticles (GNPs) and myoglobin molecules that glue GNPs and MWCNTs together are fabricated for the first time on glass substrates from aqueous solution. The nanocomposite thin film is capable of varying its resistance, impedance or optical transmittance at room temperature in response to changes in ambient humidity. The conductometric sensitivity to relative humidity (RH) of the nanocomposite thin film is compared with those of the pure and Mb-functionalized MWCNT layers. The pure MWCNT layer shows a small increase in its resistance with increasing RH due to the effect of p-type semiconducting nanotubes present in the film. In contrast, a four times higher sensitivity to RH is observed for both the nanocomposite and Mb-functionalized MWCNT thin films. The sensitivity enhancement is attributable to swelling of the thin films induced by water absorption in the presence of Mb molecules, which increases the inter-nanotube spacing and thereby causes a further increase of the film resistance. A humidity change as low as DeltaRH=0.3 % has been readily detected by conductometry using the nanocomposite thin film.

Structural and Optical Properties of Cd 1- x Se x Thin Films Deposited by Electron Beam Evaporation Technique

NASA Astrophysics Data System (ADS)

Tripathi, Ravishankar Nath; Verma, Aneet Kumar; Rahul, Vishwakarma, S. R.

2011-10-01

Cadmium selenide (CdSe) thin films deposited by means of electron beam evaporation technique under high vacuum ˜10 -5 torr on ultrasonically cleaned glass substrate. Using stating materials of various compositions of cadmium and selenium using formula Cd 1- x Se x where x is orbitory constant having value 0.20≤ x ≤0.40 here we take less value of x for the creation of anion vacancy in thin films. In present work the structural properties have been studies using XRD technique and found that starting materials and thin films both are polycrystalline in nature having hexagonal structure. Here we study the effect of composition ratio Cd/Se in starting material and its prepared thin films on its grain size and lattice parameter. From the analysis of X-Ray diffractogram found that lattice parameter and grain size both are decreases with increasing Cd/Se ratio in thin films as well as in starting material the preferred orientation in thin films along (100) plane. The surface morphology was studied using SEM characterization and found that films are smooth and homogeneous. The films have been analysed for optical band gap and absorbed a direct band gap.

Molecular dynamics simulations of disjoining pressure effects in ultra-thin water films on a metal surface

NASA Astrophysics Data System (ADS)

Hu, Han; Sun, Ying

2013-11-01

Disjoining pressure, the excess pressure in an ultra-thin liquid film as a result of van der Waals interactions, is important in lubrication, wetting, flow boiling, and thin film evaporation. The classic theory of disjoining pressure is developed for simple monoatomic liquids. However, real world applications often utilize water, a polar liquid, for which fundamental understanding of disjoining pressure is lacking. In the present study, molecular dynamics (MD) simulations are used to gain insights into the effect of disjoining pressure in a water thin film. Our MD models were firstly validated against Derjaguin's experiments on gold-gold interactions across a water film and then verified against disjoining pressure in an argon thin film using the Lennard-Jones potential. Next, a water thin film adsorbed on a gold surface was simulated to examine the change of vapor pressure with film thickness. The results agree well with the classic theory of disjoining pressure, which implies that the polar nature of water molecules does not play an important role. Finally, the effects of disjoining pressure on thin film evaporation in nanoporous membrane and on bubble nucleation are discussed.

Doping induced c-axis oriented growth of transparent ZnO thin film

NASA Astrophysics Data System (ADS)

Mistry, Bhaumik V.; Joshi, U. S.

2018-04-01

c-Axis oriented In doped ZnO (IZO) transparent conducting thin films were optimized on glass substrate using sol gel spin coating method. The Indium content in ZnO was varied systematically and the structural parameters were studied. Along with the crystallographic properties, the optoelectronic and electrical properties of IZO thin films were investigated in detail. The IZO thin films revealed hexagonal wurtzite structure. It was found that In doping in ZnO promotes the c-axis oriented growth of the thin films deposited on amorphous substrate. The particle size of the IZO films were increase as doping content increases from 2% to 5%. The 2% In doped ZnO film show electrical resistivity of 0.11 Ω cm, which is far better than the reported value for ZnO thin film. Better than 75% average optical transmission was estimated in the wavelength range from 400-800 nm. Systematic variartions in the electron concentration and band gap was observed with increasing In doping. Note worthy finding is that, with suitable amount of In doping improves not only transparency and conductivity but also improves the preferred orientation of the oxide thin film.

Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films.

PubMed

Huang, Kai-Yu; Chi, Heng-Yu; Kao, Peng-Kai; Huang, Fei-Hung; Jian, Qi-Ming; Cheng, I-Chun; Lee, Wen-Ya; Hsu, Cheng-Che; Kang, Dun-Yen

2018-01-10

Zeolites are ideal low-dielectric constant (low-k) materials. This paper reports on a novel plasma-assisted approach to the synthesis of low-k thin films comprising pure-silica zeolite MFI. The proposed method involves treating the aged solution using an atmospheric pressure plasma jet (APPJ). The high reactivity of the resulting nitrogen plasma helps to produce zeolite crystals with high crystallinity and uniform crystal size distribution. The APPJ treatment also remarkably reduces the time for hydrothermal reaction. The zeolite MFI suspensions synthesized with the APPJ treatment are used for the wet deposition to form thin films. The deposited zeolite thin films possessed dense morphology and high crystallinity, which overcome the trade-off between crystallinity and film quality. Zeolite thin films synthesized using the proposed APPJ treatment achieve low leakage current (on the order of 10 -8 A/cm 2 ) and high Young's modulus (12 GPa), outperforming the control sample synthesized without plasma treatment. The dielectric constant of our zeolite thin films was as low as 1.41. The overall performance of the low-k thin films synthesized with the APPJ treatment far exceed existing low-k films comprising pure-silica MFI.

Study on swift heavy ions induced modifications of Ag-ZnO nanocomposite thin film

NASA Astrophysics Data System (ADS)

Singh, S. K.; Singhal, R.; Siva Kumar, V. V.

2017-03-01

In the present work, swift heavy ion (SHI) irradiation induced modifications in structural and optical properties of Ag-ZnO nanocomposite thin films have been investigated. Ag-ZnO nanocomposite (NCs) thin films were synthesized by RF magnetron sputtering technique and irradiated with 100 MeV Ag7+ ions at three different fluences 3 × 1012, 1 × 1013 and 3 × 1013 ions/cm2. Rutherford Backscattering Spectrometry revealed Ag concentration to be ∼8.0 at.%, and measured thickness of the films was ∼55 nm. Structural properties of pristine and irradiated films have been analyzed by X-ray diffraction analysis and found that variation in crystallite size of the film with ion irradiation. X-ray photoelectron spectroscopy (XPS) indicates the formation of Ag-ZnO nanocomposite thin film with presence of Ag, Zn and O elements. Oxidation state of Ag and Zn also estimated by XPS analysis. Surface plasmon resonance (SPR) of Ag nanoparticle has appeared at ∼475 nm in the pristine thin film, which is blue shifted by ∼30 nm in film irradiated at fluence of 3 × 1012 ions/cm2 and completely disappeared in film irradiated at higher fluences, 1 × 1013 and 3 × 1013 ions/cm2. A marginal change in the optical band gap of Ag-ZnO nanocomposite thin film is also found with increasing ion fluence. Surface morphology of pristine and irradiated films have been studied using Atomic Force Microscopy (AFM). Raman and Photo-luminance (PL) spectra of nanocomposite thin films have been investigated to understand the ion induced modifications such as lattice defects and disordering in the nanocomposite thin film.

Large-area, electronically monodisperse, aligned single-walled carbon nanotube thin films fabricated by evaporation-driven self-assembly.

PubMed

Shastry, Tejas A; Seo, Jung-Woo T; Lopez, Josue J; Arnold, Heather N; Kelter, Jacob Z; Sangwan, Vinod K; Lauhon, Lincoln J; Marks, Tobin J; Hersam, Mark C

2013-01-14

By varying the evaporation conditions and the nanotube and surfactant concentrations, large-area, aligned single-walled carbon nanotube (SWCNT) thin films are fabricated from electronically monodisperse SWCNT solutions by evaporation-driven self-assembly with precise control over the thin film growth geometry. Tunability is possible from 0.5 μm stripes to continuous thin films. The resulting SWCNT thin films possess highly anisotropic electrical and optical properties that are well suited for transparent conductor applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multilayer composites and manufacture of same

DOEpatents

Holesinger, Terry G.; Jia, Quanxi

2006-02-07

The present invention is directed towards a process of depositing multilayer thin films, disk-shaped targets for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, where the disk-shaped targets include at least two segments with differing compositions, and a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 100 nanometers.

Analysis of Hard Thin Film Coating

NASA Technical Reports Server (NTRS)

Shen, Dashen

1998-01-01

Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Analysis of Hard Thin Film Coating

NASA Technical Reports Server (NTRS)

Shen, Dashen

1998-01-01

MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Nonlinear optical characterization of ZnS thin film synthesized by chemical spray pyrolysis method

NASA Astrophysics Data System (ADS)

G, Sreeja V.; V, Sabitha P.; Anila, E. I.; R, Reshmi; John, Manu Punnan; Radhakrishnan, P.

2014-10-01

ZnS thin film was prepared by Chemical Spray Pyrolysis (CSP) method. The sample was characterized by X-ray diffraction method and Z scan technique. XRD pattern showed that ZnS thin film has hexagonal structure with an average size of about 5.6nm. The nonlinear optical properties of ZnS thin film was studied by open aperture Z-Scan technique using Q-switched Nd-Yag Laser at 532nm. The Z-scan plot showed that the investigated ZnS thin film has saturable absorption behavior. The nonlinear absorption coefficient and saturation intensity were also estimated.

Tungsten-rhenium thin film thermocouples for SiC-based ceramic matrix composites

NASA Astrophysics Data System (ADS)

Tian, Bian; Zhang, Zhongkai; Shi, Peng; Zheng, Chen; Yu, Qiuyue; Jing, Weixuan; Jiang, Zhuangde

2017-01-01

A tungsten-rhenium thin film thermocouple is designed and fabricated, depending on the principle of thermal-electric effect caused by the high temperature. The characteristics of thin film thermocouples in different temperatures are investigated via numerical analysis and analog simulation. The working mechanism and thermo-electric features of the thermocouples are analyzed depending on the simulation results. Then the thin film thermocouples are fabricated and calibrated. The calibration results show that the thin film thermocouples based on the tungsten-rhenium material achieve ideal static characteristics and work well in the practical applications.

Studies of electronic and magnetic properties of LaVO3 thin film

NASA Astrophysics Data System (ADS)

Jana, Anupam; Karwal, Sharad; Choudhary, R. J.; Phase, D. M.

2018-04-01

We have investigated the electronic and magnetic properties of pulsed laser deposited Mott insulator LaVO3 (LVO) thin film. Structural characterization revels the single phase [00l] oriented LVO thin film. Enhancement of out of plane lattice parameter indicates the compressively strained LVO film. Electron spectroscopic studies demonstrate that vanadium is present in V3+ state. An energy dispersive X-ray spectroscopic study ensures the stoichiometric growth of the film. Very smooth surface is observed in scanning electron micrograph. Colour mapping for elemental distribution reflect the homogeneity of LVO film. The bifurcation between zero-field-cooled and Field-cooled curves clearly points towards the weak ferromagnetic phase presence in compressively strained LVO thin film. A finite value of coercivity at 300 K reflects the possibility of room temperature ferromagnetism of LVO thin film.

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

NASA Astrophysics Data System (ADS)

Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

2018-04-01

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness.

PubMed

Ievlev, Anton V; Chyasnavichyus, Marius; Leonard, Donovan N; Agar, Joshua C; Velarde, Gabriel A; Martin, Lane W; Kalinin, Sergei V; Maksymovych, Petro; Ovchinnikova, Olga S

2018-04-02

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ievlev, Anton; Chyasnavichyus, Marius; Leonard, Donovan N.

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy tomore » a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Lastly, our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.« less

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

DOE PAGES

Ievlev, Anton; Chyasnavichyus, Marius; Leonard, Donovan N.; ...

2018-02-22

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy tomore » a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Lastly, our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.« less