Spectral gain measurements of quantum confined emitters, and design and fabrication of intersubband quantum box laser structures

NASA Astrophysics Data System (ADS)

Tsvid, Gene

Semiconductor laser active regions are commonly characterized by photo- and electro-luminescence (PL, EL) and cavity length analysis. However quantitative spectral information is not readily extracted from PL and EL data and comparison of different active region materials can be difficult. More quantifiable spectral information is contained in the optical gain spectra. This work reports on spectral gain studies, using multi-segmented interband devices, of InGaAs quantum well and quantum dot active regions grown by metalorganic chemical vapor deposition (MOCVD). Using the fundamental connection between gain and spontaneous emission spectra, the spontaneous radiative current and spontaneous radiative efficiency is evaluated for these active regions. The spectral gain and spontaneous radiative efficiency measurements of 980 nm emitting InGaAs quantum well (QW) material provides a benchmark comparison to previous results obtained on highly-strained, 1200 nm emitting InGaAs QW material. These studies provide insight into carrier recombination and the role of the current injection efficiency in InGaAs QW lasers. The spectral gain of self-assembled MOCVD grown InGaAs quantum dots (QD) active regions are also investigated, allowing for comparison to InGaAs QW material. The second part of my talk will cover intersubband-transition QW and quantum-box (QB) lasers. Quantum cascade (QC) lasers have emerged as compact and technologically important light sources in the mid-infrared (IR) and far-IR wavelength ranges infringing on the near-IR and terahertz spectral regions respectively. However, the overall power conversion efficiency, so-called wallplug efficiency, of the best QC lasers, emitting around 5 microns, is ˜9% in CW operation and very unlikely to exceed 15%. In order to dramatically improve the wallplug efficiency of mid-IR lasers (i.e., to about 50%), intersubband QB (IQB) lasers have been proposed. The basic idea, the optimal design and the progress towards the fabrication of IQB lasers will be presented.

Interrogating two schedules of the AKT inhibitor MK-2206 in patients with advanced solid tumors incorporating novel pharmacodynamic and functional imaging biomarkers

PubMed Central

Yap, Timothy A.; Yan, Li; Patnaik, Amita; Tunariu, Nina; Biondo, Andrea; Fearen, Ivy; Papadopoulos, Kyriakos P.; Olmos, David; Baird, Richard; Delgado, Liliana; Tetteh, Ernestina; Beckman, Robert A.; Lupinacci, Lisa; Riisnaes, Ruth; Decordova, Shaun; Heaton, Simon P.; Swales, Karen; deSouza, Nandita M; Leach, Martin O.; Garrett, Michelle D.; Sullivan, Daniel M.; de Bono, Johann S.; Tolcher, Anthony W.

2014-01-01

Purpose Multiple cancers harbor genetic aberrations that impact AKT signaling. MK-2206 is a potent pan-AKT inhibitor with a maximum tolerated dose (MTD) previously established at 60mg on alternate days (QOD). Due to a long half-life (60-80h), a weekly (QW) MK-2206 schedule was pursued to compare intermittent QW and continuous QOD dosing. Experimental Design Patients with advanced cancers were enrolled onto a QW dose-escalation phase I study to investigate the safety and pharmacokinetic-pharmacodynamic profiles of tumor and platelet-rich plasma (PRP). The QOD MTD of MK-2206 was also assessed in patients with ovarian and castration-resistant prostate cancers, and patients with advanced cancers undergoing multiparametric functional magnetic resonance imaging (MRI) studies, including dynamic contrast-enhanced MRI, diffusion-weighted imaging, magnetic resonance spectroscopy and intrinsic susceptibility-weighted MRI. Results Seventy-one patients were enrolled; 38 patients had 60mg MK-2206 QOD, while 33 received MK-2206 at 90mg, 135mg, 150mg, 200mg, 250mg, and 300mg QW. The QW MK-2206 MTD was established at 200mg following dose-limiting rash at 250mg and 300mg. QW dosing appeared to be similarly tolerated to QOD, with toxicities including rash, gastrointestinal symptoms, fatigue, and hyperglycemia. Significant AKT pathway blockade was observed with both continuous QOD and intermittent QW dosing of MK-2206 in serially-obtained tumor and PRP specimens. The functional imaging studies demonstrated that complex multiparametric MRI protocols may be effectively implemented in a phase I trial. Conclusions MK-2206 safely results in significant AKT pathway blockade in QOD and QW schedules. The intermittent dose of 200mg QW is currently used in phase II MK-2206 monotherapy and combination studies. PMID:25239610

Interrogating two schedules of the AKT inhibitor MK-2206 in patients with advanced solid tumors incorporating novel pharmacodynamic and functional imaging biomarkers.

PubMed

Yap, Timothy A; Yan, Li; Patnaik, Amita; Tunariu, Nina; Biondo, Andrea; Fearen, Ivy; Papadopoulos, Kyriakos P; Olmos, David; Baird, Richard; Delgado, Liliana; Tetteh, Ernestina; Beckman, Robert A; Lupinacci, Lisa; Riisnaes, Ruth; Decordova, Shaun; Heaton, Simon P; Swales, Karen; deSouza, Nandita M; Leach, Martin O; Garrett, Michelle D; Sullivan, Daniel M; de Bono, Johann S; Tolcher, Anthony W

2014-11-15

Multiple cancers harbor genetic aberrations that impact AKT signaling. MK-2206 is a potent pan-AKT inhibitor with a maximum tolerated dose (MTD) previously established at 60 mg on alternate days (QOD). Due to a long half-life (60-80 hours), a weekly (QW) MK-2206 schedule was pursued to compare intermittent QW and continuous QOD dosing. Patients with advanced cancers were enrolled in a QW dose-escalation phase I study to investigate the safety and pharmacokinetic-pharmacodynamic profiles of tumor and platelet-rich plasma (PRP). The QOD MTD of MK-2206 was also assessed in patients with ovarian and castration-resistant prostate cancers and patients with advanced cancers undergoing multiparametric functional magnetic resonance imaging (MRI) studies, including dynamic contrast-enhanced MRI, diffusion-weighted imaging, magnetic resonance spectroscopy, and intrinsic susceptibility-weighted MRI. A total of 71 patients were enrolled; 38 patients had 60 mg MK-2206 QOD, whereas 33 received MK-2206 at 90, 135, 150, 200, 250, and 300 mg QW. The QW MK-2206 MTD was established at 200 mg following dose-limiting rash at 250 and 300 mg. QW dosing appeared to be similarly tolerated to QOD, with toxicities including rash, gastrointestinal symptoms, fatigue, and hyperglycemia. Significant AKT pathway blockade was observed with both continuous QOD and intermittent QW dosing of MK-2206 in serially obtained tumor and PRP specimens. The functional imaging studies demonstrated that complex multiparametric MRI protocols may be effectively implemented in a phase I trial. Treatment with MK-2206 safely results in significant AKT pathway blockade in QOD and QW schedules. The intermittent dose of 200 mg QW is currently used in phase II MK-2206 monotherapy and combination studies (NCT00670488). ©2014 American Association for Cancer Research.

Effect of quantum-well thickness on the optical polarization of AlGaN-based ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Zhang, Jing

2018-02-01

Optical polarization from AlGaN quantum well (QW) is crucial for realizing high-efficiency deep-ultraviolet (UV) light-emitting diodes (LEDs) because it determines the light emission patterns and light extraction mechanism of the devices. As the Al-content of AlGaN QW increases, the valence bands order changes and consequently the light polarization switches from transverse-electric (TE) to transverse-magnetic (TM) owing to the different sign and the value of the crystal field splitting energy between AlN (-169meV) and GaN (10meV). Several groups have reported that the ordering of the bands and the TE/TM crossover Al-content could be influenced by the strain state and the quantum confinement from the AlGaN QW system. In this work, we investigate the influence of QW thickness on the optical polarization switching point from AlGaN QW with AlN barriers by using 6-band k•p model. The result presents a decreasing trend of the critical Al-content where the topmost valence band switches from heave hole (HH) to crystal field spilt-off (CH) with increasing QW thicknesses due to the internal electric field and the strain state from the AlGaN QW. Instead, the TE- and TM-polarized spontaneous emission rates switching Al-content rises first and falls later because of joint consequence of the band mixing effect and the Quantum Confined Stark Effect. The reported optical polarization from AlGaN QW emitters in the UV spectral range is assessed in this work and the tendency of the polarization switching point shows great consistency with the theoretical results, which deepens the understanding of the physics from AlGaN QW UV LEDs.

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gladysiewicz, M.; Wartak, M. S.; Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80%more » for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.« less

Substrate dependence of TM-polarized light emission characteristics of BAlGaN/AlN quantum wells

NASA Astrophysics Data System (ADS)

Park, Seoung-Hwan; Ahn, Doyeol

2018-06-01

To study the substrate dependence of light emission characteristics of transverse-magnetic (TM)-polarized light emitted from BAlGaN/AlN quantum wells (QWs) grown on GaN and AlN substrates were investigated theoretically. It is found that the topmost valence subband for QW structures grown on AlN substrate, is heavy hole state (HH1) while that for QW structures grown on GaN substrate is crystal-field split off light hole state (CL1), irrespective of the boron content. Since TM-polarized light emission is associated with the light hole state, the TM-polarized emission peak of BAlGaN/AlN QW structures grown on GaN substrate is expected to be much larger than that of the QW structure grown on AlN substrate. Also, both QW structures show that the spontaneous emission peak of BAlGaN/AlN QW structures would be improved with the inclusion of the boron. However, it rapidly begins to decrease when the boron content exceeds a critical value.

Effect of QW thickness and numbers on performance characteristics of deep violet InGaN MQW lasers

NASA Astrophysics Data System (ADS)

Alahyarizadeh, Gh.; Amirhoseiny, M.; Hassan, Z.

2015-03-01

The performance characteristics of deep violet indium gallium nitride (InGaN) multiquantum well (MQW) laser diodes (LDs) with an emission wavelength of around 390 nm have been investigated using the integrated system engineering technical computer aided design (ISE-TCAD) software. A comparative study on the effect of quantum well (QW) thickness and number on electrical and optical performance of deep violet In0.082Ga0.918N/GaN MQW LDs have been carried out. The simulation results showed that the highest slope efficiency and external differential quantum efficiency (DQE), as well as the lowest threshold current are obtained when the number of wells is two. The different QW thickness values of 2.2, 2.5, 2.8, 3 and 3.2 nm were compared and the best results were achieved for 2.5 nm QW thickness. The radiative recombination rate decreases with increasing QW thickness because of decreasing electron and hole carrier densities in wells. By increasing QW thickness, output power decreases and threshold current increases.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antonelli, M., E-mail: matias.antonelli@elettra.eu; Cautero, G.; Sergo, R.

The recent evolution of free-electron lasers has not been matched by the development of adequate beam-monitoring instrumentation. However, for both experimental and diagnostics purposes, it is crucial to keep such photon beams under control, avoiding at the same time the absorption of the beam and the possible destruction of the detector. These requirements can be fulfilled by utilizing fast and non-invasive photon detectors operated in situ, upstream from the experimental station. From this perspective, sensors based on Quantum Well (QW) devices can be the key to detecting ultra-short light pulses. In fact, owing to their high electron mobility, InGaAs/InAlAs QWmore » devices operated at room temperature exhibit sub-nanosecond response times. Their direct, low-energy band gap renders them capable of detecting photons ranging from visible to X-ray. Furthermore, the 2D electron gas forming inside the QW is responsible for a charge amplification mechanism, which increases the charge collection efficiency of these devices. In order to acquire the signals produced by these QW sensors, a novel readout electronics has been developed. It is based on a high-speed charge integrator, which allows short, low-intensity current pulses to be read within a 50-ns window. The integrated signal is acquired through an ADC and the entire process can be performed at a 10-MHz repetition rate. This work provides a detailed description of the development of the QW detectors and the acquisition electronics, as well as reporting the main experimental results, which show how these tools are well suited for the realization of fast, broad-band beam monitors.« less

High extraction efficiency ultraviolet light-emitting diode

DOEpatents

Wierer, Jonathan; Montano, Ines; Allerman, Andrew A.

2015-11-24

Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm are preferred) result in light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.

Factors affecting the incidence of first-quality wheels of Trentingrana cheese.

PubMed

Bittante, G; Cecchinato, A; Cologna, N; Penasa, M; Tiezzi, F; De Marchi, M

2011-07-01

Trentingrana (or Grana Trentino) is a Protected Designation of Origin hard cheese produced in the eastern Italian Alps by small cooperative dairy factories. To obtain the certification of quality, wheels are evaluated at 9±1 mo of ripening and those classified as first quality are revaluated at 18±1 mo. Traditionally, the assessment is based on 2 sensory features: namely, the external aspect of the wheel and the internal texture; the latter is evaluated through the sound produced by beating the wheel with a special hammer. Traits considered in the study were the percentage of first-quality wheels of total wheels examined at 9±1 (QW(9 mo)) and 18±1 (QW(18 mo)) mo of ripening, and their combination [i.e., the percentage of first-quality wheels at 18±1 mo of ripening of the number of wheels evaluated at 9±1 mo (QW(tot))]. The experimental unit was the batch of 2 mo of production of each of 10 cooperative dairy factories from 2002 to 2008. Data were analyzed with a model that included fixed effects of dairy factory, year and season of production, and interactions between dairy factory and year, and dairy factory and season. The coefficients of determination of the models were 0.57, 0.68, and 0.67 for QW(9mo), QW(18 mo), and QW(tot), respectively. All factors significantly influenced the traits, with dairy factory being the most important source of variation, followed by season and year of production. Remarkable differences were found between the best and the worst dairy factory for QW(9 mo) (11.5%), QW(18 mo) (21.1%), and QW(tot) (25.6%). The first 4 yr of production had a negative effect on the percentage of wheels labeled as first quality and QW(tot) decreased from 74 to 64%; nevertheless, a complete recovery was detected in the following years. The season of production strongly influenced the studied traits with the best results in spring and summer, and the worst in autumn and winter. Compared with average, the 3 best dairy factories were smaller, with smaller associated farms, and showed lower variation across years and seasons of production. Results support the relevance of routinely assessing and monitoring the quality of Trentingrana cheese. Copyright © 2011 American Dairy Science Association. Published by Elsevier Inc. All rights reserved.

Hybrid male sterility between Drosophila willistoni species is caused by male failure to transfer sperm during copulation.

PubMed

Civetta, Alberto; Gaudreau, Chelsea

2015-05-01

The biological concept of species stresses the importance of understanding what mechanisms maintain species reproductively isolated from each other. Often such mechanisms are divided into premating and postmating, with the latest being the result of either prezygotic or postzygotic isolation barriers. Drosophila willistoni quechua and Drosophila willistoni willistoni are two subspecies that experience reproductive isolation. When a D. w. quechua female is crossed with a D. w. willistoni male, the hybrid males (F1QW) are unable to father progeny; however, the reciprocal cross produces fertile hybrids. Thus, the mechanism of isolation is unidirectional hybrid male sterility. However, the sterile F1QW males contain large amounts of motile sperm. Here we explore whether pre-copulatory or post-copulatory pre-zygotic mechanisms serve as major deterrents in the ability of F1QW males to father progeny. Comparisons of parental and hybrid males copulation durations showed no significant reduction in copulation duration of F1QW males. Interrupted copulations of the parental species confirmed that sperm transfer occurs before the minimum copulation duration registered for F1QW males. However, we found that when females mate with F1QW males, sperm is not present inside the female storage organs and that the lack of sperm in storage is due to failure to transfer sperm rather than spillage or active sperm dumping by females. Sterility of F1QW hybrid males is primarily driven by their inability to transfer sperm during copulation.

Bound States and the Third Harmonic Generation in an Electric Field Biased Semi-parabolic Quantum Well

NASA Astrophysics Data System (ADS)

Zhang, Li; Xie, Hong-Jing

2003-11-01

Within the framework of the compact density matrix approach, the third-harmonic generation (THG) in an electric-field-biased semi-parabolic quantum well (QW) has been deduced and investigated. Via variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field have also been obtained and discussed. Numerical results on typical GaAs material reveal that, electric fields and confined potential frequency of semi-parabolic QW have obvious influences on the energy levels of electronic states and the THG in the semi-parabolic QW systems. The project supported in part by Guangdong Provincial Natural Science Foundation of China

Parametric Quantum Search Algorithm as Quantum Walk: A Quantum Simulation

NASA Astrophysics Data System (ADS)

Ellinas, Demosthenes; Konstandakis, Christos

2016-02-01

Parametric quantum search algorithm (PQSA) is a form of quantum search that results by relaxing the unitarity of the original algorithm. PQSA can naturally be cast in the form of quantum walk, by means of the formalism of oracle algebra. This is due to the fact that the completely positive trace preserving search map used by PQSA, admits a unitarization (unitary dilation) a la quantum walk, at the expense of introducing auxiliary quantum coin-qubit space. The ensuing QW describes a process of spiral motion, chosen to be driven by two unitary Kraus generators, generating planar rotations of Bloch vector around an axis. The quadratic acceleration of quantum search translates into an equivalent quadratic saving of the number of coin qubits in the QW analogue. The associated to QW model Hamiltonian operator is obtained and is shown to represent a multi-particle long-range interacting quantum system that simulates parametric search. Finally, the relation of PQSA-QW simulator to the QW search algorithm is elucidated.

Type-I interband cascade lasers near 3.2 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Yuchao; Li, Lu; Yang, Rui Q., E-mail: Rui.Q.Yang@ou.edu

2015-01-26

Interband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages and InAs/AlSb superlattice cladding layers. In contrast to the use of quinary AlGaInAsSb barriers for active region in previous type-I QW lasers, the type-I QW active region in each stage is sandwiched by digitally graded multiple InAs/AlSb QW electron injector and GaSb/AlSb QW hole injector. The fabricated type-I IC lasers were able to operate in continuous wave and pulsed modes at temperatures up to 306 and 365 K, respectively. The threshold current densities of broad-area lasersmore » were around 300 A/cm{sup 2} at 300 K with a lasing wavelength near 3.2 μm. The implications and prospects of these initial results are discussed.« less

Emission and material gain spectra of polar compressive strained AlGaN quantum wells grown on virtual AlGaN substrates: Tuning emission wavelength and mixing TE and TM mode of light polarization

NASA Astrophysics Data System (ADS)

Gladysiewicz, Marta; Rudzinski, Mariusz; Hommel, Detlef; Kudrawiec, Robert

2018-07-01

It is shown that compressively strained polar AlxGa1‑xN/AlyGa1‑yN quantum wells (QWs) of various contents grown on virtual AlYGa1‑YN substrates (Y = 20, 40, 60, 80, and 100%) are able to cover the whole UV-A, -B, and -C spectral range but their contents and widths have to be carefully optimized if they are to be used as the active region of light emitting diodes and laser diodes. The emission wavelength from AlGaN multi QWs can be tuned by both the QW width and barrier thickness, but the range of QW width for which an efficient luminescence is expected is very small (2–4 nm) due to a very weak electron-hole overlap for wider QWs. The most effective method for wavelength tuning in this QW system is content engineering, i.e., lowering Al concentration in the QW region. The decrease of Al concentration in the QW shifts the emission peak to red, broadens this peak, weakens its intensity, and changes its polarization from transverse magnetic (TM) to TM mixed with transverse electric (TE). For laser diodes the optimal QW design is more rigorous concerning the QW width since this width should be below 3 nm. Moreover it is shown that the TE and TM mode of materials gain overlap and are strongly blueshifted in comparison to emission spectrum.

Coherent Pump-Probe Interactions and Terahertz Intersubband Gain in Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

In recent years there has been considerable interest in intersubband-transition-based infrared semiconductor quantum well (QW) lasers because of their potential applications. In the mid-infrared range, both electrically-injected quantum cascade lasers [1] and optically-pumped multiple QW lasers [2] have been experimentally realized. In these studies, optical gain is due to population inversion between the lasing subbands. It was also proposed that stimulated Raman scattering in QW systems can produce net infrared optical gain [3j. In such a nonlinear optical scheme, the appearance of optical gain that may lead to intersubband Raman lasers does not rely on the population inversion. Since, in tile resonant Raman process (Raman gain is the largest in this case), the pump field induces population redistribution among subbands in the QW s ystem, it seems that a realistic estimate of the optical gain has to include this effect. Perturbative calculations used in the previous work [3] may overestimate the Raman gain. In this paper we present a nonperturbative calculation of terahertz gain of optically-pumped semiconductor step quantum wells. Limiting optical transitions within the conduction band of QW, we solve the pump-field-induced nonequilibrium distribution function for each subband of the QW system from a set of coupled rate equations. Both intrasubband and intersubband relaxation processes in the quantum well system are included. Taking into account the coherent interactions between pump and THz (signal) waves, we we derive the susceptibility of the QW system for the THz field. For a GaAs/AlGaAs step QW, we calculate the Thz gain spectrum for different pump frequencies and intensities. Under moderately strong pumping (approximately 0.3 MW/sq cm), a significant THz gain (approximately 300/m) is predicted. It is also shown that the coherent wave interactions (resonant stimulated Raman processes) contribute significantly to the THz gain.

Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aihara, Taketo; Fukuyama, Atsuhiko; Ikari, Tetsuo

2015-02-28

Three non-destructive methodologies, namely, surface photovoltage (SPV), photoluminescence, and piezoelectric photothermal (PPT) spectroscopies, were adopted to detect the thermal carrier escape from quantum well (QW) and radiative and non-radiative carrier recombinations, respectively, in strain-balanced InGaAs/GaAsP multiple-quantum-well (MQW)-inserted GaAs p-i-n solar cell structure samples. Although the optical absorbance signal intensity was proportional to the number of QW stack, the signal intensities of the SPV and PPT methods decreased at high number of stack. To explain the temperature dependency of these signal intensities, we proposed a model that considers the three carrier dynamics: the thermal escape from the QW, and the non-radiativemore » and radiative carrier recombinations within the QW. From the fitting procedures, it was estimated that the activation energies of the thermal escape ΔE{sub barr} and non-radiative recombination ΔE{sub NR} were 68 and 29 meV, respectively, for a 30-stacked MQW sample. The estimated ΔE{sub barr} value agreed well with the difference between the first electron subband and the top of the potential barrier in the conduction band. We found that ΔE{sub barr} remained constant at approximately 70 meV even with increasing QW stack number. However, the ΔE{sub NR} value monotonically increased with the increase in the number of stack. Since this implies that non-radiative recombination becomes improbable as the number of stack increases, we found that the radiative recombination probability for electrons photoexcited within the QW increased at a large number of QW stack. Additional processes of escaping and recapturing of carriers at neighboring QW were discussed. As a result, the combination of the three non-destructive methodologies provided us new insights for optimizing the MQW components to further improve the cell performance.« less

Effect of Γ-X band mixing on the donor binding energy in a Quantum Wire

NASA Astrophysics Data System (ADS)

Vijaya Shanthi, R.; Jayakumar, K.; Nithiananthi, P.

2015-02-01

To invoke the technological applications of heterostructure semiconductors like Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD), it is important to understand the property of impurity energy which is responsible for the peculiar electronic & optical behavior of the Low Dimensional Semiconductor Systems (LDSS). Application of hydrostatic pressure P>35kbar drastically alters the band offsets leading to the crossover of Γ band of the well & X band of the barrier resulting in an indirect transition of the carrier and this effect has been studied experimentally and theoretically in a QW structure. In this paper, we have investigated the effect of Γ-X band mixing due to the application of hydrostatic pressure in a GaAs/AlxGa1-xAs QWW system. The results are presented and discussed for various widths of the wire.

Interband Cascade Laser Photon Noise

DTIC Science & Technology

2009-09-01

bias , electrons that are injected into the InAs QW, undergo radiative or non-radiative interband transitions into the GaInSb QW, tunnel into the...to the QC laser photon noise is dominant and increases with bias current (18, 19). This is in contrast to interband diode lasers, where spontaneous...adjacent GaSb QW, and then enter the next injection region by interband tunneling . The laser structures were grown by molecular-beam- epitaxy and processed

GaSbBi/GaSb quantum-well and wire laser diodes

NASA Astrophysics Data System (ADS)

Ridene, Said

2018-06-01

In this work, we present detailed theoretical studies of the optical gain spectra and the emission wavelength of GaSb1-xBix/GaSb and traditional GaAs1-xBix/GaAs dilute-bismide quantum wells and wires (QWs, QWRs) focusing on comparison between their performances. It is found that the optical gain and the emission wavelength of the GaSb-based QW and QWRs lasers would be considerably greater than that of the GaAs-based QW lasers and QWRs for the same QW-, QWR-width, Bi-content and carrier density. The theoretical results were found to be in good agreement with available experimental data, especially for the emission wavelength given by GaSb-based QW laser diodes.

Rashba-Zeeman-effect-induced spin filtering energy windows in a quantum wire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Xianbo, E-mail: xxb-11@hotmail.com; Nie, Wenjie; Chen, Zhaoxia

2014-06-14

We perform a numerical study on the spin-resolved transport in a quantum wire (QW) under the modulation of both Rashba spin-orbit coupling (SOC) and a perpendicular magnetic field by using the developed Usuki transfer-matrix method in combination with the Landauer-Büttiker formalism. Wide spin filtering energy windows can be achieved in this system for unpolarized spin injection. In addition, both the width of energy window and the magnitude of spin conductance within these energy windows can be tuned by varying Rashba SOC strength, which can be apprehended by analyzing the energy dispersions and spin-polarized density distributions inside the QW, respectively. Furthermore » study also demonstrates that these Rashba-SOC-controlled spin filtering energy windows show a strong robustness against disorders. These findings may not only benefit to further understand the spin-dependent transport properties of a QW in the presence of external fields but also provide a theoretical instruction to design a spin filter device.« less

Quarry waste management and recovery: first results connected to Carrara marble ravaneti (Italy)

NASA Astrophysics Data System (ADS)

Antonella Dino, Giovanna; Chiappino, Claudia; Rossetti, Piergiorgio

2017-04-01

Quarry waste (QW) represents a huge economic and environmental issue, due to loss of resources and to economic and environmental costs connected to waste management and landfilling activities. In many cases, valuable Raw Materials (RM) and Secondary Raw Materials (SRM) can be supplied by enhancing the QW recovery. In Italy large amounts of QW have been and still are dumped: such materials, if their quality (chemical, mineralogical, physical characteristics) and quantity are adequate, and if the impacts connected to their management are positive, can represent a valuable resource for SRM exploitation. Several dimension stone quarries have been and are interested by researches as for QW exploitation. Some researches show positive results, which are the basis for QW recovery (both from waste streams and from quarry dumps exploitation): a noticeable example is represented by Carrara marble waste. The Carrara quarry basin is characterized by ca. one hundred quarries for colored and white marble exploitation. The waste production can be summarized in: 80 Mm3 waste present in old quarry dumps (Ravaneti) and 3 Mm3/y of waste stream from quarrying activities. At present only 0.5 Mm3/y of QW is exploited for SRM production, causing a huge loss of resource. This has been the background for a preliminary research, on Carrara marble Ravaneti characterization, which was carried out thanks to the close cooperation between University of Torino, Società Apuana Marmi srl, and SET srl. In 2015, two QW dumping areas, Calocara and Lorano, were selected as representative for sampling activities. Three main sample categories were individuated based on granulometry (0.5-4 mm, 0-25 mm, 0-150 mm) to be characterized (size distribution, density, Atterberg limits, Los Angeles test, freezing and heat tests, flat and shape indexes, geochemistry, mineralogy). The results obtained are promising: the physical characterization shows an attitude for Carrara QW to be recovered as crushed materials for embankments and armour stone. Furthermore, the mineralogical and geochemical analyses show that these materials, being composed of nearly pure CaCO3, could find a proper application in high value products, as filler for paper, rubber, paint, plastic, etc. These data need to be confirmed by other analyses, thus a systematic characterization of QW present in the different quarry dumps is going to be programmed. R&D is strategic to solve problems connected to QW and landscape management. The cooperation between private Companies, Research Centers and Local Authorities is fundamental to reach the target, in terms of experimentation of new products (for civil works and infrastructure, building industry, agronomy, high-tech, etc.). Furthermore, if the stone industry aims at guaranteeing the systematic and convenient SRM recovery from QW, a change in exploitation and working activities has to be planned (eg. selection of the potential SRMs; dedicated stock areas for selected SRM; proper treatments depending on the kinds of reuse; treatment-activity protocols to produce each new product, etc.).

Real-world glycemic outcomes in patients with type 2 diabetes initiating exenatide once weekly and liraglutide once daily: a retrospective cohort study.

PubMed

Saunders, William B; Nguyen, Hiep; Kalsekar, Iftekhar

2016-01-01

The glucagon-like peptide-1 receptor agonists exenatide once weekly (QW) and liraglutide once daily (QD) have demonstrated improvements in glycemic outcomes in patients with type 2 diabetes mellitus in randomized clinical trials. However, little is known about their real-world comparative effectiveness. This retrospective cohort study used the Quintiles Electronic Medical Record database to evaluate the 6-month change in glycated hemoglobin (A1C) for patients initiating exenatide QW or liraglutide QD. Patients with type 2 diabetes mellitus prescribed exenatide QW (n=664) or liraglutide QD (n=3,283) between February 1, 2012 and May 31, 2013 were identified. Baseline A1C measures were from 75 days before to 15 days after initiating exenatide QW or liraglutide QD, with follow-up measures documented at 6 months (±45 days). Adjusted linear regression models compared the difference in mean A1C change. A priori defined sensitivity analysis was performed in the subgroup of patients with baseline A1C ≥7.0% and no prescription for insulin during the 12-month pre-index period. For exenatide QW and liraglutide QD, respectively, mean (SD) age of the main study cohort was 58.01 (10.97) and 58.12 (11.05) years, mean (SD) baseline A1C was 8.4% (1.6) and 8.4% (1.6), and 48.2% and 54.2% of patients were women. In adjusted models, change in A1C did not differ between exenatide QW and liraglutide QD during 6 months of follow-up. Results were consistent in the subgroup analyses. In a real-world setting, A1C similarly improves in patients initiating exenatide QW or liraglutide QD.

Solution-processed, barrier-confined, and 1D nanostructure supported quasi-quantum well with large photoluminescence enhancement.

PubMed

Yan, Keyou; Zhang, Lixia; Kuang, Qin; Wei, Zhanhua; Yi, Ya; Wang, Jiannong; Yang, Shihe

2014-04-22

Planar substrate supported semiconductor quantum well (QW) structures are not amenable to manipulation in miniature devices, while free-standing QW nanostructures, e.g., ultrathin nanosheets and nanoribbons, suffer from mechanical and environmental instability. Therefore, it is tempting to fashion high-quality QW structures on anisotropic and mechanically robust supporting nanostructures such as nanowires and nanoplates. Herein, we report a solution quasi-heteroepitaxial route for growing a barrier-confined quasi-QW structure (ZnSe/CdSe/ZnSe) on the supporting arms of ZnO nanotetrapods, which have a 1D nanowire structure, through the combination of ion exchange and successive deposition assembly. This resulted in highly crystalline and highly oriented quasi-QWs along the whole axial direction of the arms of the nanotetrapod because a transition buffer layer (Zn(x)Cd(1-x)Se) was formed and in turn reduced the lattice mismatch and surface defects. Significantly, such a barrier-confined QW emits excitonic light ∼17 times stronger than the heterojunction (HJ)-type structure (ZnSe/CdSe, HJ) at the single-particle level. Time-resolved photoluminescence from ensemble QWs exhibits a lifetime of 10 ns, contrasting sharply with ∼300 ps for the control HJ sample. Single-particle PL and Raman spectra suggest that the barrier layer of QW has completely removed the surface trap states on the HJ and restored or upgraded the photoelectric properties of the semiconductor layer. Therefore, this deliberate heteroepitaxial growth protocol on the supporting nanotetrapod has realized a several micrometer long QW structure with high mechanical robustness and high photoelectric quality. We envision that such QWs integrated on 1D nanostructures will largely improve the performance of solar cells and bioprobes, among others.

AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm

NASA Astrophysics Data System (ADS)

Toropov, A. A.; Shevchenko, E. A.; Shubina, T. V.; Jmerik, V. N.; Nechaev, D. V.; Evropeytsev, E. A.; Kaibyshev, V. Kh.; Pozina, G.; Rouvimov, S.; Ivanov, S. V.

2017-07-01

We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible internal quantum efficiency of emission in the mid-ultraviolet spectral range below 300 nm at room temperature. A sample with optimized parameters was fabricated by plasma-assisted molecular beam epitaxy using the submonolayer digital alloying technique for QW formation. High-angle annular dark-field scanning transmission electron microscopy confirmed strong compositional disordering of the thus-fabricated QW, which presumably facilitates lateral localization of charge carriers in the QW plane. Stress evolution in the heterostructure was monitored in real time during growth using a multibeam optical stress sensor intended for measurements of substrate curvature. Time-resolved photoluminescence spectroscopy confirmed that radiative recombination in the fabricated sample dominated in the whole temperature range up to 300 K. This leads to record weak temperature-induced quenching of the QW emission intensity, which at 300 K does not exceed 20% of the low-temperature value.

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

PubMed Central

Sadofyev, Yuri G.; Samal, Nigamananda

2010-01-01

An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM) of ~60 meV in room temperature (RT) photoluminescence (PL) indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

2018-01-01

Deep ultraviolet (DUV) AlN-delta-GaN quantum well (QW) light-emitting diodes (LEDs) with emission wavelengths of 234 nm and 246 nm are proposed and demonstrated in this work. Our results reveal that the use of AlN-delta-GaN QW with ˜1-3 monolayer GaN delta-layer can achieve a large transverse electric (TE)-polarized spontaneous emission rate instead of transverse magnetic-polarized emission, contrary to what is observed in conventional AlGaN QW in the 230-250 nm wavelength regime. The switching of light polarization in the proposed AlN-delta-GaN QW active region is attributed to the rearrangement of the valence subbands near the Γ-point. The light radiation patterns obtained from angle-dependent electroluminescence measurements for the Molecular Beam Epitaxy (MBE)-grown 234 nm and 246 nm AlN-delta-GaN QW LEDs show that the photons are mainly emitted towards the surface rather than the edge, consistent with the simulated patterns achieved by the finite-difference time-domain modeling. The results demonstrate that the proposed AlN-delta-GaN QWs would potentially lead to high-efficiency TE-polarized surface-emitting DUV LEDs.

Efficacy and Safety of Multiple Doses of Exenatide Once-Monthly Suspension in Patients With Type 2 Diabetes: A Phase II Randomized Clinical Trial.

PubMed

Wysham, Carol H; MacConell, Leigh; Hardy, Elise

2016-10-01

This study investigated the efficacy and safety of multiple exenatide once-monthly suspension (QMS) doses of exenatide-containing microspheres in Miglyol referenced against the clinical dose of exenatide once-weekly (QW) microspheres in aqueous solution. In this phase II, randomized, controlled, single-blind study, 121 adults (∼30/arm) with type 2 diabetes and HbA1c 7.1-11.0% (54-97 mmol/mol) were randomized 1:1:1:1 to subcutaneous exenatide QW 2 mg (self-administered) or exenatide QMS 5, 8, or 11 mg (caregiver-administered) for 20 weeks. The primary end point was change in HbA1c. At baseline, mean age was 50 years, HbA1c was 8.5% (69 mmol/mol), fasting plasma glucose (FPG) was 184 mg/dL, and body weight was 98 kg. At week 20, mean ± SD HbA1c reductions were -1.54% ± 1.26% with exenatide QW and -1.29% ± 1.07%, -1.31% ± 1.66%, and -1.45% ± 0.93% with exenatide QMS 5, 8, and 11 mg, respectively (evaluable population: n = 110). There were no significant differences in HbA1c reductions among the exenatide QMS doses. FPG reductions were -34 ± 48 mg/dL with exenatide QW and -25 ± 43, -30 ± 52, and -49 ± 49 mg/dL with exenatide QMS 5, 8, and 11 mg, respectively. Weight decreased with all treatments. For exenatide QMS, nausea (16.7-23.3%) and headache (16.7-26.7%) were the most common adverse events. No major or minor hypoglycemia occurred. All doses of exenatide QMS resulted in efficacy and tolerability profiles consistent with exenatide QW. These results combined with pharmacokinetic and pharmacodynamic modeling could inform dose selection for further development. © 2016 by the American Diabetes Association.

A phase I open-label dose-escalation study of the anti-HER3 monoclonal antibody LJM716 in patients with advanced squamous cell carcinoma of the esophagus or head and neck and HER2-overexpressing breast or gastric cancer.

PubMed

Reynolds, Kerry Lynn; Bedard, Philippe L; Lee, Se-Hoon; Lin, Chia-Chi; Tabernero, Josep; Alsina, Maria; Cohen, Ezra; Baselga, José; Blumenschein, George; Graham, Donna M; Garrido-Laguna, Ignacio; Juric, Dejan; Sharma, Sunil; Salgia, Ravi; Seroutou, Abdelkader; Tian, Xianbin; Fernandez, Rose; Morozov, Alex; Sheng, Qing; Ramkumar, Thiruvamoor; Zubel, Angela; Bang, Yung-Jue

2017-09-12

Human epidermal growth factor receptor 3 (HER3) is important in maintaining epidermal growth factor receptor-driven cancers and mediating resistance to targeted therapy. A phase I study of anti-HER3 monoclonal antibody LJM716 was conducted with the primary objective to identify the maximum tolerated dose (MTD) and/or recommended dose for expansion (RDE), and dosing schedule. Secondary objectives were to characterize safety/tolerability, pharmacokinetics, pharmacodynamics, and preliminary antitumor activity. This open-label, dose-finding study comprised dose escalation, followed by expansion in patients with squamous cell carcinoma of the head and neck or esophagus, and HER2-overexpressing metastatic breast cancer or gastric cancer. During dose escalation, patients received LJM716 intravenous once weekly (QW) or every two weeks (Q2W), in 28-day cycles. An adaptive Bayesian logistic regression model was used to guide dose escalation and establish the RDE. Exploratory pharmacodynamic tumor studies evaluated modulation of HER3 signaling. Patients received LJM716 3-40 mg/kg QW and 20 mg/kg Q2W (54 patients; 36 patients at 40 mg/kg QW). No dose-limiting toxicities (DLTs) were reported during dose-escalation. One patient experienced two DLTs (diarrhea, hypokalemia [both grade 3]) in the expansion phase. The RDE was 40 mg/kg QW, providing drug levels above the preclinical minimum effective concentration. One patient with gastric cancer had an unconfirmed partial response; 17/54 patients had stable disease, two lasting >30 weeks. Down-modulation of phospho-HER3 was observed in paired tumor samples. LJM716 was well tolerated; the MTD was not reached, and the RDE was 40 mg/kg QW. Further development of LJM716 is ongoing. Clinicaltrials.gov registry number NCT01598077 (registered on 4 May, 2012).

Long-Term Evolution of a Long-Term Evolution Model

DTIC Science & Technology

2011-01-01

equations for the movement of the dune toe yD and the berm crest location yB are dyD/dt=(qw-qo)/DD and dyB/dt=-(qw-qo)/(DB+DC) respectively, where qw...and sand properties, yB and yD = distances to the seaward end of the berm and the dune toe , respectively, with the y-axis pointing offshore, y50...relative to mean sea level, MSL); zD = dune toe elevation (with respect to MSL); T = swash period (taken to be the same as the wave period); and Cs

Theoretical Study of Operational Limits of High-Speed Quantum Dot Lasers

DTIC Science & Technology

2012-09-09

esc − vLn,captnL − b1 BnL pL, (1) b1 ∂pL ∂ t = p L QW τLp,esc − vLp,capt pL − b1 BnL pL, (2) for free holes and electrons on the right-hand side of...on the left- hand side of the OCL can be written as follows: pLQW τp,esc = vLp,capt pL + b1 BnL pL. (28) Substituting pLQW/τp,esc−vLp,capt pL = b1 BnL ...pL in (6), we have B2Dn L QW p L QW + b1 BnL pL = wLp,tunn pL,QW1 NS fp − wLp,tunn NS(1 − fp)pLQW. (29) As seen from (29), bimolecular recombination

Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Daehwan, E-mail: daehwan.jung@yale.edu; Larry Lee, Minjoo; Yu, Lan

We report room-temperature (RT) electroluminescence (EL) from InAs/InAs{sub x}P{sub 1−x} quantum well (QW) light-emitting diodes (LEDs) over a wide wavelength range of 2.50–2.94 μm. We demonstrate the ability to accurately design strained InAs QW emission wavelengths while maintaining low threading dislocation density, coherent QW interfaces, and high EL intensity. Investigation of the optical properties of the LEDs grown on different InAs{sub x}P{sub 1−x} metamorphic buffers showed higher EL intensity and lower thermal quenching for QWs with higher barriers and stronger carrier confinement. Strong RT EL intensity from LEDs with narrow full-width at half-maximum shows future potential for InAs QW mid-infrared lasermore » diodes on InAsP/InP.« less

Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

NASA Astrophysics Data System (ADS)

Roque, J.; Haas, B.; David, S.; Rochat, N.; Bernier, N.; Rouvière, J. L.; Salem, B.; Gergaud, P.; Moeyaert, J.; Martin, M.; Bertin, F.; Baron, T.

2018-05-01

In 0.3 Ga 0.7 As quantum wells (QW) embedded in AlGaAs barriers and grown on oxidized patterned (001) silicon substrates by metalorganic chemical vapor deposition using the aspect ratio trapping method are studied. An appropriate method combining cathodoluminescence and high resolution scanning transmission electron microscopy characterization is performed to spatially correlate the optical and structural properties of the QW. A triple period (TP) ordering along the ⟨111⟩ direction induced by the temperature decrease during the growth to favor indium incorporation and aligned along the oxidized patterns is observed in the QW. Local ordering affects the band gap and contributes to the decrease of the optical emission efficiency. Using thermal annealing, we were able to remove the TP ordering and improve the QW optical emission by two orders of magnitude.

Commercial production of QWIP wafers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Fastenau, J. M.; Liu, W. K.; Fang, X. M.; Lubyshev, D. I.; Pelzel, R. I.; Yurasits, T. R.; Stewart, T. R.; Lee, J. H.; Li, S. S.; Tidrow, M. Z.

2001-06-01

As the performance of quantum well infrared photodetectors (QWIPs) and QWIP-based imaging systems continues to improve, their demand will undoubtedly grow. This points to the importance of a reliable commercial supplier of semiconductor QWIP material on three inch and, in the near future, four-inch substrates. Molecular beam epitaxy (MBE) is the preferred technique for growing the demanding QWIP structure, as tight control is required over the material composition and layer thickness. We report the current status of MBE-grown GaAs-based QWIP structures in a commercial production environment at IQE. Uniformity data and run-to-run reproducibility on both three-inch and four-inch GaAs substrates are quantified using alloy composition and QW thickness. Initial results on growth technology transfer to a multi-wafer MBE reactor are also presented. High-resolution X-ray diffraction measurements demonstrate GaAs QW thickness variations and AlGaAs barrier compositions changes to be less than 4% and 1% Al, respectively, across four-inch QWIP wafers from both single- and multiple-wafer MBE platforms.

Carrier-envelope phase control of carrier-wave Rabi flopping in asymmetric semiparabolic quantum well.

PubMed

Zhang, Chaojin; Song, Xiaohong; Yang, Weifeng; Xu, Zhizhan

2008-02-04

We investigate the carrier-wave Rabi flopping effects in an asymmetric semiparabolic semiconductor quantum well (QW) with few-cycle pulse. It is found that higher spectral components of few-cycle ultrashort pulses in the semiparabolic QW depend crucially on the carrier-envelope phase (CEP) of the few-cycle ultrashort pulses: continuum and distinct peaks can be achieved by controlling the CEP. Our results demonstrate that by adjusting the CEP of few-cycle ultrashort pulses, the intersubband dynamics in the asymmetric semiparabolic QW can be controlled in an ultrashort timescale with moderate laser intensity.

Carrier localization in In0.21Ga0.79As/GaAs multiple quantum wells: A modified Pässler model for the S-shaped temperature dependence of photoluminescence energy

NASA Astrophysics Data System (ADS)

Fraj, Ibtissem; Hidouri, Tarek; Saidi, Faouzi; Maaref, Hassen

2017-02-01

The optical properties of In0.21Ga0.79As/GaAs MQWs, with triple unequal layer thickness NW (3 nm), MW (6 nm) and WW (9 nm) grown on (001) and (113) GaAs substrates, is studied by using continuous wave photoluminescence (cw-PL) spectroscopy. A comparative study has been performed to demonstrate the influence of electric field and QW thickness on the exciton localization. An S-shaped form in temperature-dependent PL peak energy has been observed in polar middle QW (MW (113)) but not seen in non-polar ones (MW (001)). This behavior is linked to carrier localization in triangular potential and polarity. We have observed also this atypical evolution in non-polar wide QW (WW (001)) but not in non-polar middle QW (MW (001)), which is attributed to potential fluctuation in larger ones. With the aid of modified Pässler model for including the effect of localized states, we can persuasively reproduce the S-shaped temperature dependence of PL band gap energy and contribute to the estimated value of exciton localization energy. The values of σ are obtained from adjustment of experimental points, which indicate the degree of localization in QW layer.

Once-weekly versus every-other-day stereotactic body radiotherapy in patients with prostate cancer (PATRIOT): A phase 2 randomized trial.

PubMed

Quon, Harvey C; Ong, Aldrich; Cheung, Patrick; Chu, William; Chung, Hans T; Vesprini, Danny; Chowdhury, Amit; Panjwani, Dilip; Pang, Geordi; Korol, Renee; Davidson, Melanie; Ravi, Ananth; McCurdy, Boyd; Zhang, Liying; Mamedov, Alexandre; Deabreu, Andrea; Loblaw, Andrew

2018-05-01

Prostate stereotactic body radiotherapy (SBRT) regimens differ in time, dose, and fractionation. We completed a multicentre, randomized phase II study to investigate the impact of overall treatment time on quality of life (QOL). Men with low and intermediate-risk prostate cancer were randomly assigned to 40 Gy in 5 fractions delivered once per week (QW) vs. every other day (EOD). QOL was assessed using the Expanded Prostate Cancer Index Composite. The primary endpoint was the proportion with a minimum clinically important change (MCIC) in bowel QOL during the acute (≤12 week) period, and analysis was by intention-to-treat. ClinicalTrials.gov NCT01423474. 152 men from 3 centres were randomized with median follow-up of 47 months. Patients treated QW had superior acute bowel QOL with 47/69 (68%) reporting a MCIC compared to 63/70 (90%) treated EOD (p = 0.002). Fewer patients treated QW reported moderate-severe problems with bowel QOL during the acute period compared with EOD (14/70 [20%] vs. 40/70 [57%], p < 0.001). Acute urinary QOL was also better in the QW arm, with 52/67 (78%) vs 65/69 (94%) experiencing a MCIC (p = 0.006). There were no significant differences in late urinary or bowel QOL at 2 years or last follow-up. Prostate SBRT delivered QW improved acute bowel and urinary QOL compared to EOD. Patients should be counselled regarding the potential for reduced short-term toxicity and improved QOL with QW prostate SBRT. Copyright © 2018 Elsevier B.V. All rights reserved.

Exciton Absorption in Semiconductor Quantum Wells Driven by a Strong Intersubband Pump Field

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

Optical interband excitonic absorption of semiconductor quantum wells (QW's) driven by a coherent pump field is investigated based on semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW's. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron-hole pairs in the QW structure is low, the pump field induces an Autler-Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron-hole pairs is increased, the split contrast (the ratio between the maximum and minimum values) is decreased because the exciton effect is suppressed at higher densities due to the many-body screening.

Novel Image Encryption based on Quantum Walks

PubMed Central

Yang, Yu-Guang; Pan, Qing-Xiang; Sun, Si-Jia; Xu, Peng

2015-01-01

Quantum computation has achieved a tremendous success during the last decades. In this paper, we investigate the potential application of a famous quantum computation model, i.e., quantum walks (QW) in image encryption. It is found that QW can serve as an excellent key generator thanks to its inherent nonlinear chaotic dynamic behavior. Furthermore, we construct a novel QW-based image encryption algorithm. Simulations and performance comparisons show that the proposal is secure enough for image encryption and outperforms prior works. It also opens the door towards introducing quantum computation into image encryption and promotes the convergence between quantum computation and image processing. PMID:25586889

Jaw-opening reflex and corticobulbar motor excitability changes during quiet sleep in non-human primates.

PubMed

Yao, Dongyuan; Lavigne, Gilles J; Lee, Jye-Chang; Adachi, Kazunori; Sessle, Barry J

2013-02-01

To test the hypothesis that the reflex and corticobulbar motor excitability of jaw muscles is reduced during sleep. Polysomnographic recordings in the electrophysiological study. University sleep research laboratories. The reflex and corticobulbar motor excitability of jaw muscles was determined during the quiet awake state (QW) and quiet sleep (QS) in monkeys (n = 4). During QS sleep, compared to QW periods, both tongue stimulation-evoked jaw-opening reflex peak and root mean square amplitudes were significantly decreased with stimulations at 2-3.5 × thresholds (P < 0.001). The jaw-opening reflex latency during sleep was also significantly longer than during QW. Intracortical microstimulation (ICMS) within the cortical masticatory area induced rhythmic jaw movements at a stable threshold (≤ 60 μA) during QW; but during QS, ICMS failed to induce any rhythmic jaw movements at the maximum ICMS intensity used, although sustained jaw-opening movements were evoked at significantly increased threshold (P < 0.001) in one of the monkeys. Similarly, during QW, ICMS within face primary motor cortex induced orofacial twitches at a stable threshold (≤ 35 μA), but the ICMS thresholds were elevated during QS. Soon after the animal awoke, rhythmic jaw movements and orofacial twitches could be evoked at thresholds similar to those before QS. The results suggest that the excitability of reflex and corticobulbar-evoked activity in the jaw motor system is depressed during QS.

Characterization of interfacial waves in horizontal core-annular flow

NASA Astrophysics Data System (ADS)

Tripathi, Sumit; Bhattacharya, Amitabh; Singh, Ramesh; Tabor, Rico F.

2016-11-01

In this work, we characterize interfacial waves in horizontal core annular flow (CAF) of fuel-oil and water. Experimental studies on CAF were performed in an acrylic pipe of 15.5mm internal diameter, and the time evolution of the oil-water interface shape was recorded with a high speed camera for a range of different flow-rates of oil (Qo) and water (Qw). The power spectrum of the interface shape shows a range of notable features. First, there is negligible energy in wavenumbers larger than 2 π / a , where a is the thickness of the annulus. Second, for high Qo /Qw , there is no single dominant wavelength, as the flow in the confined annulus does not allow formation of a preferred mode. Third, for lower Qo /Qw , a dominant mode arises at a wavenumber of 2 π / a . We also observe that the power spectrum of the interface shape depends weakly on Qw, and strongly on Qo, perhaps because the net shear rate in the annulus appears to depend weakly on Qw as well. We also attempt to build a general empirical model for CAF by relating the interfacial stress (calculated via the mean pressure gradient) to the flow rate in the annulus, the annular thickness and the core velocity. Authors are thankful to Orica Mining Services (Australia) for the financial support.

Power and temperature dependent photoluminescence investigation of the linear polarization at normal and inverted interface transitions in InP/InAlAs and InGaAsP/InAlAs QW structures

NASA Astrophysics Data System (ADS)

Esmaielpour, Hamidreza; Whiteside, Vincent R.; Hirst, Louise C.; Forbes, David V.; Walters, Robert J.; Sellers, Ian R.

We present an investigation of the interface effects for InGaAsP/InAlAs QW and InP/InAlAs QW structures capped with an InP layer. Continuous wave photoluminescence (PL) spectroscopy of these samples at 4 K shows features associated with the interfaces of an InAlAs layer grown on an InP layer (normal interface) and an InP layer grown on an InAlAs material (inverted interface). Power dependent PL of the InGaAsP QW indicates that there are two features related to the inverted interface, whereby the linear polarization of one increases and for the other decreases. In addition, a temperature dependent study of this sample shows that as the temperature increases: the linear polarization for both features decreases; at room temperature, there is negligible polarization effect. A power dependent PL study of the InP QW structure shows both normal and inverted interface transitions have opposing trends in linear polarization. Notably, the temperature dependent PL investigation displays a reduction of polarization degree for the inverted interface: as expected; while an increase of polarization for the normal interface was observed. In addition, power and temperature dependence of peak energy of the interface transitions for both samples will be presented.

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

NASA Astrophysics Data System (ADS)

Gladysiewicz, M.; Kudrawiec, R.; Syperek, M.; Misiewicz, J.; Siekacz, M.; Cywinski, G.; Khachapuridze, A.; Suski, T.; Skierbiszewski, C.

2014-06-01

It is shown that in polar InGaN QWs emitting in the blue-green spectral region a Stokes shift between spontaneous emission (SE) and optical transition observed in contactless electroreflectance (CER) spectrum (absorption-like technique) can be observed even at room temperature, despite the fact that the SE is not associated with localized states. Time resolved photoluminescence measurements clearly confirm that the SE is strongly localized at low temperatures whereas at room temperature the carrier localization disappears and the SE can be attributed to the fundamental transition in this QW. The Stokes shift is observed in this QW system because of the large built-in electric field, i.e., the CER transition is a superposition of all optical transitions with non-zero electron-hole overlap integrals and, therefore, the energy of this transition does not correspond to the fundamental transition of InGaN QW. Lasing from this QW has been observed at the wavelength of 475 nm, whereas the SE was observed at 500 nm. The 25 nm shift between the lasing and SE is observed because of a screening of the built-in electric field by photogenerated carriers. However, our analysis shows that the built-in electric field inside the InGaN QW region is not fully screened under the lasing conditions.

Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field.

PubMed

Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

2016-10-19

A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engineering or unconventional materials and structures. Although increasing thickness of each QW may decrease carrier density in QWs, formation of additional strain and defects as well as increased built-in field effect due to enlarged QW thickness are unavoidable. Here, we propose a facile and effective method for not only reducing efficiency droop but also improving quantum efficiency by utilizing c-plane InGaN/GaN QWs having thinner barriers and increased QW number while keeping the same single well thickness and total active layer thickness. As the barrier thickness decreases and the QW number increases, both internal electric field and carrier density within QWs are simultaneously reduced without degradation of material quality. Furthermore, we found overall improved efficiency and reduced efficiency droop, which was attributed to the decrease of the built-in field and to less influence by non-radiative recombination processes at high carrier density. This simple and effective approach can be extended further for high power ultraviolet, green, and red LEDs.

Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field

NASA Astrophysics Data System (ADS)

Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

2016-10-01

A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engineering or unconventional materials and structures. Although increasing thickness of each QW may decrease carrier density in QWs, formation of additional strain and defects as well as increased built-in field effect due to enlarged QW thickness are unavoidable. Here, we propose a facile and effective method for not only reducing efficiency droop but also improving quantum efficiency by utilizing c-plane InGaN/GaN QWs having thinner barriers and increased QW number while keeping the same single well thickness and total active layer thickness. As the barrier thickness decreases and the QW number increases, both internal electric field and carrier density within QWs are simultaneously reduced without degradation of material quality. Furthermore, we found overall improved efficiency and reduced efficiency droop, which was attributed to the decrease of the built-in field and to less influence by non-radiative recombination processes at high carrier density. This simple and effective approach can be extended further for high power ultraviolet, green, and red LEDs.

Catastrophic optical bulk degradation (COBD) in high-power single- and multi-mode InGaAs-AlGaAs strained quantum well lasers

NASA Astrophysics Data System (ADS)

Sin, Yongkun; Lingley, Zachary; Brodie, Miles; Presser, Nathan; Moss, Steven C.

2017-02-01

High-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers are critical components for both telecommunications and space satellite communications systems. However, little has been reported on failure modes and degradation mechanisms of high-power SM and MM InGaAs-AlGaAs strained QW lasers although it is crucial to understand failure modes and underlying degradation mechanisms in developing these lasers that meet lifetime requirements for space satellite systems, where extremely high reliability of these lasers is required. Our present study addresses the aforementioned issues by performing long-term life-tests followed by failure mode analysis (FMA) and physics of failure investigation. We performed long-term accelerated life-tests on state-of-the-art SM and MM InGaAs-AlGaAs strained QW lasers under ACC (automatic current control) mode. Our life-tests have accumulated over 25,000 test hours for SM lasers and over 35,000 test hours for MM lasers. FMA was performed on failed SM lasers using electron beam induced current (EBIC). This technique allowed us to identify failure types by observing dark line defects. All the SM failures we studied showed catastrophic and sudden degradation and all of these failures were bulk failures. Our group previously reported that bulk failure or COBD (catastrophic optical bulk damage) is the dominant failure mode of MM InGaAs-AlGaAs strained QW lasers. Since degradation mechanisms responsible for COBD are still not well understood, we also employed other techniques including focused ion beam (FIB) processing and high-resolution TEM to further study dark line defects and dislocations in post-aged lasers. Our long-term life-test results and FMA results are reported.

Circular polarization in a non-magnetic resonant tunneling device.

PubMed

Dos Santos, Lara F; Gobato, Yara Galvão; Teodoro, Márcio D; Lopez-Richard, Victor; Marques, Gilmar E; Brasil, Maria Jsp; Orlita, Milan; Kunc, Jan; Maude, Duncan K; Henini, Mohamed; Airey, Robert J

2011-01-25

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

Circular polarization in a non-magnetic resonant tunneling device

PubMed Central

2011-01-01

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. PMID:21711613

Determination of the effective refractive index spectrum of a quantum-well semiconductor laser diode from the measured modal gain spectrum

NASA Astrophysics Data System (ADS)

Wu, Linzhang; Tian, Wei; Gao, Feng

2004-09-01

This paper presents a self-consistent method to directly determine the effective refractive-index spectrum of a semiconductor quantum-well (QW) laser diode from the measured modal gain spectrum for a given current. The dispersion spectra of the optical waveguide confinement factor and the strongly carrier-density-dependent refractive index of the QW active layer of the test laser are also accurately obtained. The experimental result from a single QW GaInP/AlGaInP laser diode, which has 6 nm thick compressively strained Ga0.4InP active layer sandwiched by two 80 nm thick Al0.33GaInP, is presented.

Atom Probe Tomography Analysis of Gallium-Nitride-Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Prosa, Ty J.; Olson, David; Giddings, A. Devin; Clifton, Peter H.; Larson, David J.; Lefebvre, Williams

2014-03-01

Thin-film light-emitting diodes (LEDs) composed of GaN/InxGa1-xN/GaN quantum well (QW) structures are integrated into modern optoelectronic devices because of the tunable InGaN band-gap enabling emission of the full visible spectrum. Atom probe tomography (APT) offers unique capabilities for 3D device characterization including compositional mapping of nano-volumes (>106 nm3) , high detection efficiency (>50%), and good sensitivity. In this study, APT is used to understand the distribution of dopants as well as Al and In alloying agents in a GaN device. Measurements using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have also been made to improve the accuracy of the APT analysis by correlating the information content of these complimentary techniques. APT analysis reveals various QW and other optoelectronic structures including a Mg p-GaN layer, an Al-rich electron blocking layer, an In-rich multi-QW region, and an In-based super-lattice structure. The multi-QW composition shows good quantitative agreement with layer thickness and spacing extracted from a high resolution TEM image intensity analysis.

Dairy Streptococcus thermophilus improves cell viability of Lactobacillus brevis NPS-QW-145 and its γ-aminobutyric acid biosynthesis ability in milk.

PubMed

Wu, Qinglong; Law, Yee-Song; Shah, Nagendra P

2015-08-06

Most high γ-aminobutyric acid (GABA) producers are Lactobacillus brevis of plant origin, which may be not able to ferment milk well due to its poor proteolytic nature as evidenced by the absence of genes encoding extracellular proteinases in its genome. In the present study, two glutamic acid decarboxylase (GAD) genes, gadA and gadB, were found in high GABA-producing L. brevis NPS-QW-145. Co-culturing of this organism with conventional dairy starters was carried out to manufacture GABA-rich fermented milk. It was observed that all the selected strains of Streptococcus thermophilus, but not Lactobacillus delbrueckii subsp. bulgaricus, improved the viability of L. brevis NPS-QW-145 in milk. Only certain strains of S. thermophilus improved the gadA mRNA level in L. brevis NPS-QW-145, thus enhanced GABA biosynthesis by the latter. These results suggest that certain S. thermophilus strains are highly recommended to co-culture with high GABA producer for manufacturing GABA-rich fermented milk.

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure.

PubMed

Yu, Jiadong; Wang, Lai; Di Yang; Zheng, Jiyuan; Xing, Yuchen; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2016-10-19

The spin and optical polarization based on a coupled InGaN/GaN quantum well (QW) and quantum dots (QDs) structure is investigated. In this structure, spin-electrons can be temporarily stored in QW, and spin injection from the QW into QDs via spin-conserved tunneling is enabled. Spin relaxation can be suppressed owing to the small energy difference between the initial state in the QW and the final states in the QDs. Photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements are carried out on optical spin-injection and -detection. Owing to the coupled structure, spin-conserved tunneling mechanism plays a significant role in preventing spin relaxation process. As a result, a higher circular polarization degree (CPD) (~49.1%) is achieved compared with conventional single layer of QDs structure. Moreover, spin relaxation time is also extended to about 2.43 ns due to the weaker state-filling effect. This coupled structure is believed an appropriate candidate for realization of spin-polarized light source.

Clinical implications of exenatide as a twice-daily or once-weekly therapy for type 2 diabetes.

PubMed

Aroda, Vanita R; DeYoung, Mary Beth

2011-09-01

Exenatide (exendin-4) is a 39-amino acid peptide belonging to the glucagon-like peptide-1 (GLP-1) receptor agonist class that has been demonstrated to improve glycemic control in patients with type 2 diabetes mellitus. Exenatide can be injected twice daily (ExBID) before meals or once weekly (ExQW) when encompassed within dissolvable poly-(D,L-lactide-co-glycolide) microspheres. The primary difference between these formulations is the plasma concentration of exenatide over time, with the long-acting form providing continuous delivery. Clinical trials have examined the similarities and differences in the efficacy and safety/tolerability outcomes of these formulations. In 2 clinical studies spanning 24 and 30 weeks, significant (P < 0.05) reductions from baseline were observed in fasting plasma glucose (ExBID, -12 and -25 mg/dL; ExQW, -35 and -41 mg/dL), postprandial glucose (ExBID, -124 mg/dL; ExQW, -95 mg/dL), and glycated hemoglobin (HbA1c) (ExBID, -0.9% and -1.5%; ExQW, -1.6% and -1.9%). Reductions in body weight from baseline were significant and similar with both treatments (ExBID, -1.4 and -3.6 kg; ExQW, -2.3 and -3.7 kg). Reductions in systolic blood pressure from baseline were observed with both formulations, particularly in patients who were hypertensive at baseline. Beneficial improvements in lipid profiles were small and fluctuated in significance. Patients reported greater treatment satisfaction with ExQW compared with ExBID dosing. Gastrointestinal adverse events were commonly observed with both formulations but were less frequent with ExQW. These events were of mild-to-moderate intensity and rarely led to discontinuation. Real-world data for ExBID demonstrated decreases in HbA1c, fasting plasma glucose, and body weight that were consistent with clinical trial results. Cases of pancreatitis or renal impairment have been reported in patients treated with ExBID, although no causal relationship with treatment has been shown. This review describes the similarities and differences between exenatide delivered as a twice-daily or as a once-weekly injection to provide a better understanding of the clinical effects and potential clinical uses of each.

Photoluminescence of ZnTe/ZnMgTe multiple quantum well structures grown on ZnTe substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Tanaka, Tooru; Ohshita, Hiroshi; Saito, Katsuhiko; Guo, Qixin

2018-02-01

Photoluminescence (PL) properties of ZnTe/ZnMgTe quantum well (QW) structures grown by molecular beam epitaxy (MBE) were investigated systematically with respect to well widths and Mg contents. Observed PL peak energies were consistent well with the calculated emission energies of the QWs considering a lattice distortion in the ZnTe well. From the temperature dependence of PL intensity, it was found that a suppression of a carrier escape from QW is crucial to obtain a PL at higher temperature in the ZnTe/ZnMgTe QW. Based on the results, multiple quantum well structures were designed and fabricated, which exhibited a green PL at room temperature.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, S. L., E-mail: shuch@ist.hokudai.ac.jp; Takayama, J.; Murayama, A.

Power-dependent time-resolved optical spin orientation measurements were performed on In{sub 0.1}Ga{sub 0.9}As quantum well (QW) and In{sub 0.5}Ga{sub 0.5}As quantum dot (QD) tunnel-coupled structures with an 8-nm-thick GaAs barrier. A fast transient increase of electron spin polarization was observed at the QW ground state after circular-polarized pulse excitation. The temporal maximum of polarization increased with increasing pumping fluence owing to enhanced spin blocking in the QDs, yielding a highest amplification of 174% with respect to the initial spin polarization. Further elevation of the laser power gradually quenched the polarization dynamics, which was induced by saturated spin filling of both themore » QDs and the QW phase spaces.« less

Second NASA Workshop on Wiring for Space Applications

NASA Technical Reports Server (NTRS)

1994-01-01

This document contains the proceedings of the Second NASA Workshop on Wiring for Space Applications held at NASA LeRC in Cleveland, OH, 6-7 Oct. 1993. The workshop was sponsored by NASA Headquarters Code QW Office of Safety and Mission Quality, Technical Standards Division and hosted by NASA LeRC, Power Technology Division, Electrical Components and Systems Branch. The workshop addressed key technology issues in the field of electrical power wiring for space applications. Speakers from government, industry, and academia presented and discussed topics on arc tracking phenomena, wiring system design, insulation constructions, and system protection. Presentation materials provided by the various speakers are included in this document.

A Comparative Study of QD and Nitrogen-Based 1.3 mu m VCSELs

DTIC Science & Technology

2001-06-01

molecular beam epitaxy (MBE) proposed as promising candidates for 1.3 /tm emitters. Among them InGaAsN quantum well (QW) and InGaAs quantum dots (QD... VCSELs DISTRIBUTION: Approved for public release, distribution unlimited Availability: Hard copy only. This paper is part of the following report: TITLE...and Technology" LOED.02 St Petersburg, Russia, June 18-22, 2001 ©0 2001 loffe Institute A comparative study of QD and nitrogen-based 1.3 /tm VCSELs A. P

Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn δ layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaitsev, S. V., E-mail: szaitsev@issp.ac.ru; Akimov, I. A.; Langer, L.

2016-09-15

The coherent spin dynamics of carriers in the heterostructures that contain an InGaAs/GaAs quantum well (QW) and an Mn δ layer, which are separated by a narrow GaAs spacer 2–10 nm thick, is comprehensively studied by the magnetooptical Kerr effect method at a picosecond time resolution. The exchange interaction of photoexcited electrons in QW with the ferromagnetic Mn δ layer manifests itself in magnetic-field and temperature dependences of the Larmor precession frequency of electron spins and is found to be very weak (several microelectron volts). Two nonoscillating components related to holes exist apart from an electron contribution to the Kerrmore » signal of polarization plane rotation. At the initial stage, a fast relaxation process, which corresponds to the spin relaxation of free photoexcited holes, is detected in the structures with a wide spacer. The second component is caused by the further spin dephasing of energyrelaxed holes, which are localized at strong QW potential fluctuations in the structures under study. The decay of all contributions to the Kerr signal in time increases substantially when the spacer thickness decreases, which correlates with the enhancement of nonradiative recombination in QW.« less

Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

NASA Astrophysics Data System (ADS)

Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

2018-04-01

The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

NASA Astrophysics Data System (ADS)

Pieczarka, M.; Syperek, M.; Biegańska, D.; Gilfert, C.; Pavelescu, E. M.; Reithmaier, J. P.; Misiewicz, J.; Sek, G.

2017-05-01

The lateral carrier diffusion process is investigated in coupled InGaAs/GaAs quantum dot-quantum well (QD-QW) structures by means of spatially resolved photoluminescence spectroscopy at low temperature. Under non-resonant photo-excitation above the GaAs bandgap, the lateral carrier transport reflected in the distorted electron-hole pair emission profiles is found to be mainly governed by high energy carriers created within the 3D density of states of GaAs. In contrast, for the case of resonant excitation tuned to the QW-like ground state of the QD-QW system, the emission profiles remain unaffected by the excess kinetic energy of carriers and local phonon heating within the pump spot. The lateral diffusion lengths are determined and present certain dependency on the coupling strength between QW and QDs. While for a strongly coupled structure the diffusion length is found to be around 0.8 μm and monotonically increases up to 1.4 μm with the excitation power density, in weakly coupled structures, it is determined to ca. 1.6 μm and remained virtually independent of the pumping power density.

Effect of conduction band non-parabolicity on the optical gain of quantum cascade lasers based on the effective two-band finite difference method

NASA Astrophysics Data System (ADS)

Cho, Gookbin; Kim, Jungho

2017-09-01

We theoretically investigate the effect of conduction band non-parabolicity (NPB) on the optical gain spectrum of quantum cascade lasers (QCLs) using the effective two-band finite difference method. Based on the effective two-band model to consider the NPB effect in the multiple quantum wells (QWs), the wave functions and confined energies of electron states are calculated in two different active-region structures, which correspond to three-QW single-phonon and four-QW double-phonon resonance designs. In addition, intersubband optical dipole moments and polar-optical-phonon scattering times are calculated and compared without and with the conduction band NPB effect. Finally, the calculation results of optical gain spectra are compared in the two QCL structures having the same peak gain wavelength of 8.55 μm. The gain peaks are greatly shifted to longer wavelengths and the overall gain magnitudes are slightly reduced when the NPB effect is considered. Compared with the three-QW active-region design, the redshift of the peak gain is more prominent in the four-QW active-region design, which makes use of higher electronic states for the lasing transition.

Changes in Heart Rate Associated with Exenatide Once Weekly: Pooled Analysis of Clinical Data in Patients with Type 2 Diabetes.

PubMed

Marso, Steven P; Hardy, Elise; Han, Jenny; Wang, Hui; Chilton, Robert J

2018-04-01

Glucagon-like peptide-1 receptor agonists (GLP-1RAs) improve glycemia in patients with type 2 diabetes, but heart rate increases have been observed. A pooled post hoc analysis of 11 randomized clinical trials (N = 4595) of 10-30 weeks' duration from the exenatide once-weekly (QW) development program evaluated heart rate with exenatide QW (intervention group) and exenatide twice daily (BID), liraglutide, and non-GLP-1RAs (insulin, metformin, pioglitazone, and sitagliptin) (comparison groups). The time course and size of heart rate changes from baseline and the relationship of heart rate change with baseline heart rate were studied. A multivariate analysis (9 studies; N = 3903) examined associations between patient characteristics or treatments and heart rate increases. Mean baseline heart rate ± standard deviation was 75.0 ± 8.5 beats per minute (bpm) with exenatide QW (n = 2096), 75.8 ± 8.7 bpm with exenatide BID (n = 606), 75.2 ± 8.9 bpm with liraglutide (n = 450), and 74.5 ± 8.6 bpm with non-GLP-1RAs (n = 1443). Least-squares mean ± standard error changes from baseline to final heart rate were + 2.7 ± 0.2, + 1.0 ± 0.3, and + 3.0 ± 0.4 bpm with exenatide QW, exenatide BID, and liraglutide, respectively, and - 0.8 ± 0.2 bpm with non-GLP-1RAs. The size and direction of heart rate changes in individual patients varied within each treatment group at all time points. At posttreatment follow-up, heart rate reverted to the baseline level after GLP-1RA discontinuation. Heart rate changes correlated negatively with baseline heart rate for all therapies (r = - 0.3 to - 0.4). Baseline heart rate was the strongest predictor of increased heart rate. Small increases in heart rate were associated with exenatide QW, exenatide BID, and liraglutide treatments but reverted to baseline after discontinuation. Increases were more likely in patients with a low baseline heart rate. The clinical relevance of these heart rate increases is unknown but will be clarified by several ongoing and recently completed cardiovascular outcome studies.

Synchrotron radiation microbeam X-ray diffraction for nondestructive assessments of local structural properties of faceted InGaN/GaN quantum wells

NASA Astrophysics Data System (ADS)

Sakaki, Atsushi; Funato, Mitsuru; Kawamura, Tomoaki; Araki, Jun; Kawakami, Yoichi

2018-03-01

Synchrotron radiation (SR) X-ray diffraction with a sub-µm spatial resolution is used to nondestructively evaluate the local thickness and alloy composition of three-dimensionally faceted InGaN/GaN quantum wells (QWs). The (0001) facet QW on a trapezoidal structure composed of (0001), \\{ 11\\bar{2}2\\} , and \\{ 11\\bar{2}0\\} facets is nonuniform, most likely owing to the migration of adatoms between facets. The thickness and composition markedly vary within a short distance for the \\{ 11\\bar{2}2\\} facet QW of another pyramidal structure. The QW parameters acquired by SR microbeam X-ray diffraction reproduce the local emission property assessed by cathodoluminescence, thereby indicating the high reliability of this method.

Quaternized wood as sorbent for hexavalent chromium.

PubMed

Low, K S; Lee, C K; Lee, C Y

2001-01-01

The potential of quaternized wood (QW) chips in removing hexavalent chromium from synthetic solution and chrome waste under both batch and continuous-flow conditions was investigated. Sorption was found to be dependent on pH, metal concentration, and temperature. QW chips provide higher sorption capacity and wider pH range compared with untreated wood chips. The equilibrium data could be fitted into the Langmuir isotherm model, and maximum sorption capacities were calculated to be 27.03 and 25.77 mg/g in synthetic chromate solution and chrome waste, respectively. The presence of sulfate in high concentration appeared to suppress the uptake of chromium by QW chips. Column studies showed that bed depth influenced the breakthrough time greatly whereas flow rate of influent had little effect on its sorption on the column.

Control of Polarization of Vertical-Cavity Surface - Lasers

NASA Astrophysics Data System (ADS)

Sun, Decai

1995-01-01

To date, most vertical-cavity surface-emitting lasers (VCSELs) have been fabricated from structures grown on GaAs (InP) substrates oriented in the (001) crystallographic axis. For the most part, these devices have exhibited linear, but random polarization states with no definite relationship to the in-plane crystallographic axes. The control of the polarization states of these devices is important for polarization-sensitive applications. Such applications include magneto-optic disk recording and coherent detection in advanced communication systems. In this thesis, a novel approach for controlling the polarization eigen-states of VCSELs is investigated. The approach utilizes anisotropic optical properties found in quantum wells (QW) oriented in directions other than the (001) to stabilize their polarization states. Specifically, the (110) direction is chosen for this work. An analysis of the in-plane optical matrix element connected with the gain coefficient of (In,Ga)As/GaAs QW structures grown on (110) GaAs substrates is conducted. It is found that the in-plane gain distribution is elliptically anisotropic--with a maximum directed along the (110) - (110) crystallographic axis. The design and growth of (In,Ga)As/GaAs QW VCSEL structures is studied in this work. The transition wavelengths of the (001) - and (110) -oriented (In,Ga)As/GaAs QW structures are calculated using a finite QW model. Distributed Bragg reflector mirrors consisting of GaAs/AlAs quarter wave layers are modeled using a characteristic matrix method. Threshold gain, internal and differential quantum efficiencies are analyzed. The growth of III-V compounds on (110) GaAs substrates by molecular beam epitaxy is investigated. High quality materials are successfully grown on the misoriented (110) GaAs substrates tilted by 6^circ toward the (111)B surface. (In,Ga)As/GaAs QW VCSEL structures are grown on (001) and (110) GaAs substrates. (In,Ga)As/GaAs QW VCSELs are fabricated from structures grown on the (001) and (110) surfaces. Experimental characterization shows that the devices fabricated from the (110) surface exhibit stable, well-defined polarization states at room temperature; this is in contrast to the random polarization characteristics observed from the VCSELs fabricated from the (001) surface. This stability is believed to be a consequence of the predicted anisotropic gain distribution on the (110) surface. Of the two orthogonal eigen-polarizations observed, the one with the higher optical intensity is found to be aligned along the (110) - (110) crystallographic axis; this is in agreement with theoretical predictions.

Interband Cascade Laser Photon Noise

DTIC Science & Technology

2008-12-01

undergo radiative or nonradiative interband transitions into the GaInSb QW, tunnel into the adjacent GaSb QW and then enter the next injection region by... interband tunneling . The laser structures were grown by molecular-beam-epitaxy and processed into mesa-stripe lasers with a mesa width of 15 1... INTERBAND CASCADE LASER PHOTON NOISE Patrick A. Folkes Army Research Laboratory Adelphi, MD 20783-1197 ABSTRACT We report

Jaw-Opening Reflex and Corticobulbar Motor Excitability Changes During Quiet Sleep in Non-Human Primates

PubMed Central

Yao, Dongyuan; Lavigne, Gilles J.; Lee, Jye-Chang; Adachi, Kazunori; Sessle, Barry J.

2013-01-01

Study Objective: To test the hypothesis that the reflex and corticobulbar motor excitability of jaw muscles is reduced during sleep. Design: Polysomnographic recordings in the electrophysiological study. Setting: University sleep research laboratories. Participants and Interventions: The reflex and corticobulbar motor excitability of jaw muscles was determined during the quiet awake state (QW) and quiet sleep (QS) in monkeys (n = 4). Measurements and Results: During QS sleep, compared to QW periods, both tongue stimulation-evoked jaw-opening reflex peak and root mean square amplitudes were significantly decreased with stimulations at 2-3.5 × thresholds (P < 0.001). The jaw-opening reflex latency during sleep was also significantly longer than during QW. Intracortical microstimulation (ICMS) within the cortical masticatory area induced rhythmic jaw movements at a stable threshold (≤ 60 μA) during QW; but during QS, ICMS failed to induce any rhythmic jaw movements at the maximum ICMS intensity used, although sustained jaw-opening movements were evoked at significantly increased threshold (P < 0.001) in one of the monkeys. Similarly, during QW, ICMS within face primary motor cortex induced orofacial twitches at a stable threshold (≤ 35 μA), but the ICMS thresholds were elevated during QS. Soon after the animal awoke, rhythmic jaw movements and orofacial twitches could be evoked at thresholds similar to those before QS. Conclusions: The results suggest that the excitability of reflex and corticobulbar-evoked activity in the jaw motor system is depressed during QS. Citation: Yao D; Lavigne GJ; Lee JC; Adachi K; Sessle BJ. Jaw-opening reflex and corticobulbar motor excitability changes during quiet sleep in non-human primates. SLEEP 2013;36(2):269-280. PMID:23372275

Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot-quantum well structures emitting at telecom spectral range

NASA Astrophysics Data System (ADS)

Rudno-Rudziński, W.; Biegańska, D.; Misiewicz, J.; Lelarge, F.; Rousseau, B.; Sek, G.

2018-01-01

We investigate the diffusion of photo-generated carriers (excitons) in hybrid two dimensional-zero dimensional tunnel injection structures, based on strongly elongated InAs quantum dots (called quantum dashes, QDashes) of various heights, designed for emission at around 1.5 μm, separated by a 3.5 nm wide barrier from an 8 nm wide In0.64Ga0.36As0.78P0.22 quantum well (QW). By measuring the spectrally filtered real space images of the photoluminescence patterns with high resolution, we probe the spatial extent of the emission from QDashes. Deconvolution with the exciting light spot shape allows us to extract the carrier/exciton diffusion lengths. For the non-resonant excitation case, the diffusion length depends strongly on excitation power, pointing at carrier interactions and phonons as its main driving mechanisms. For the case of excitation resonant with absorption in the adjacent QW, the diffusion length does not depend on excitation power for low excitation levels since the generated carriers do not have sufficient excess kinetic energy. It is also found that the diffusion length depends on the quantum-mechanical coupling strength between QW and QDashes, controlled by changing the dash size. It influences the energy difference between the QDash ground state of the system and the quantum well levels, which affects the tunneling rates. When that QW-QDash level separation decreases, the probability of capturing excitons generated in the QW by QDashes increases, which is reflected by the decreased diffusion length from approx. 5 down to 3 μm.

Dual-Wavelength InGaAsSb/AlGaAsSb Quantum-Well Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Nguyen, Tien Dai; Hwang, Jehwan; Kim, Yeongho; Kim, Eui-Tae; Kim, Jun Oh; Lee, Sang Jun

2018-05-01

We have investigated the structural characteristics and the device performance of three-stack InGaAsSb/AlGaAsSb quantum-well (QW) light-emitting diodes (LEDs) grown by using molecular beam epitaxy. The QW LED structure with an 8-nm well thickness had a single peak emission wavelength of 2.06 μm at an injection current of 0.3 A at room temperature. However, the QWLEDs with three different well thicknesses of 5-, 10-, and 15-nm had double peak emission wavelengths of 1.97 and 2.1 μm at an injection current of 1.1 A, which were associated with the radiative recombination in the QW with a 5-nm well thickness and the overlapped emission from the QWs with 10- and 15-nm well thicknesses, respectively.

Proceedings of 16th Nordic Semiconductor Meeting Held in Laugarvatn, Iceland on 12-15 June 1994

DTIC Science & Technology

1995-01-10

uniform and is a Recent work [1] by Thomas, Pr~tre and this author on sensitive function of the AB-flux. The nonuniform density the admittance of... LWIR window), are more Fig. 1. Energy band structure of a GaAs/AIGaAs quantum well (QW). difficult to grow, process and fabricate into uniform devices...technology is a viable candidate for large, high per- formance, low cost LWIR (8-12 gm) focal plane arrays (FPAs) [4-6]. CGWX QWIPs operate on account

Electronic and optical properties of HEMT heterostructures with δ-Si doped GaAs/AlGaAs quantum rings — quantum well system

NASA Astrophysics Data System (ADS)

Sibirmovsky, Y. D.; Vasil'evskii, I. S.; Vinichenko, A. N.; Zhigunov, D. M.; Eremin, I. S.; Kolentsova, O. S.; Safonov, D. A.; Kargin, N. I.

2017-11-01

Samples of δ-Si doped AlGaAs/GaAs/AlGaAs HEMT heterostructures with GaAs quantum rings (QRs) on top of the quantum well (QW) were grown by molecular beam epitaxy and their properties were compared to the reference samples without QRs. The thickness of the QW was 6 - 10 nm for the samples with QRs and 20 nm for the reference samples. Photoluminescence measurements at low temperatures for all samples show at least two distinct lines in addition to the bulk GaAs line. The Hall effect and low temperature magnetotransport measurements at 4 - 320 K show that conductivity with and without illumination decreases significantly with QRs introduction, however the relative photoconductivity increases. Samples with 6 nm QW are insulating, which could be caused by the strong localization of the charge carriers in the QRs.

Electric field effect on the second-order nonlinear optical properties of parabolic and semiparabolic quantum wells

NASA Astrophysics Data System (ADS)

Zhang, Li; Xie, Hong-Jing

2003-12-01

By using the compact-density-matrix approach and iterative procedure, a detailed procedure for the calculation of the second-harmonic generation (SHG) susceptibility tensor is given in the electric-field-biased parabolic and semiparabolic quantum wells (QW’s). The simple analytical formula for the SHG susceptibility in the systems is also deduced. By adopting the methods of envelope wave function and displacement harmonic oscillation, the electronic states in parabolic and semi parabolic QW’s with applied electric fields are exactly solved. Numerical results on typical AlxGa1-xAl/GaAs materials show that, for the same effective widths, the SHG susceptibility in semiparabolic QW is larger than that in parabolic QW due to the self-asymmetry of the semiparabolic QW, and the applied electric field can make the SHG susceptibilities in both systems enhance remarkably. Moreover, the SHG susceptibility also sensitively depends on the relaxation rate of the systems.

Increasing Saturated Electron-Drift Velocity in Donor-Acceptor Doped pHEMT Heterostructures

NASA Astrophysics Data System (ADS)

Protasov, D. Yu.; Gulyaev, D. V.; Bakarov, A. K.; Toropov, A. I.; Erofeev, E. V.; Zhuravlev, K. S.

2018-03-01

Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor-acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8-0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2-1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

Comparative optical study of epitaxial InGaAs quantum rods grown with As{sub 2} and As{sub 4} sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nedzinskas, Ramūnas; Čechavičius, Bronislovas; Kavaliauskas, Julius

2013-12-04

Photoreflectance and photoluminescence (PL) spectroscopies are used to examine the optical properties and electronic structure of InGaAs quantum rods (QRs), embedded within InGaAs quantum well (QW). The nanostructures studied were grown by molecular beam epitaxy using As{sub 2} or As{sub 4} sources. The impact of As source on spectral features associated with interband optical transitions in the QRs and the surrounding QW are demonstrated. A red shift of the QR- and a blue shift of the QW-related optical transitions, along with a significant increase in PL intensity, have been observed if an As{sub 4} source is used. The changes inmore » optical properties are attributed mainly to carrier confinement effects caused by variation of In content contrast between the QR material and the surrounding well.« less

Electrically-detected magnetic resonance in semiconductor nanostructures inserted in microcavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii

2013-12-04

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance caused by the microcavities embedded in the Si-QW plane.

Optimization of GaN Nanorod Growth Conditions for Coalescence Overgrowth

DTIC Science & Technology

2016-02-04

GaN core and QW deposition, an NR LED array can be implemented by covering the NRs with a transparent conductor . It has been demonstrated that the...with a transparent conductor . It has been demonstrated that the optical and electrical performances of an NR LED array can be comparable to those of a...a process of buffered oxide etching for removing this SiNx layer on the sidewalls is required before sidewall QW deposition. Nevertheless, the

Budget impact analysis of darbepoetin alfa every 3 weeks versus epoetin alfa every week for the treatment of chemotherapy-induced anaemia from a US payer's perspective.

PubMed

Rubin, Robert J; Glaspy, John A; Adams, John L; Mafilios, Michael S; Wang, Sharon M; Viswanathan, Hema N; Kallich, Joel D

2008-01-01

This analysis was conducted to compare the direct medical costs of treatment with darbepoetin alfa every 3 weeks (Q3W) and epoetin alfa every week (QW) in patients with chemotherapy-induced anaemia (CIA) from the payer's perspective. An analysis was conducted from a US health plan perspective to compare the annual budget impact for CIA with darbepoetin alfa Q3W and epoetin alfa QW over a 16-week treatment period. Dosing regimens were obtained from registration clinical trials. Mean doses, including dose adjustments, were 375.6 microg Q3W for darbepoetin alfa and 43,187 U QW for epoetin alfa. Costs of medical resources included drug acquisition and administration costs. The base case analysis resulted in a per-patient budget impact of $8,544 and $8,667 for darbepoetin alfa and epoetin alfa, respectively. Per member per month cost was $0.90 for darbepoetin alfa and $0.91 for epoetin alfa, based on an estimate of 2,735 CIA patients in a health plan population of 2.17 million. The analysis was most sensitive to drug dose, treatment period and drug price. Results suggest that per-patient direct medical costs of CIA treatment, when initiated at labelled starting doses, are comparable for darbepoetin alfa Q3W and epoetin alfa QW.

Formation Dirac point and the topological surface states for HgCdTe-QW and mixed 3D HgCdTe TI

NASA Astrophysics Data System (ADS)

Marchewka, Michał

2017-01-01

In this paper the results of numerical calculations based on the finite difference method (FDM) for the 2D and 3D TI with and without uniaxial tensile strain for mixed Hg1-xCdxTe structures are presented. The numerical calculations were made using the 8×8 model for x from 0 up to 0.155 and for the wide range for the thickness from a few nm for 2D up to 150 nm for 3D TI as well as for different mismatch of the lattice constant and different barrier potential in the case of the QW. For the investigated region of the Cd composition (x value) the negative energy gap (Eg=Γ8-Γ6) in the Hg1-xCdxTe is smaller than in the case of pure HgTe which, as it turns out, has a significant influence on the topological surface states (TSS) and the position of the Dirac point for QW as well as for 3D TI. The results show that the strained gap and the position of the Dirac point against the Γ8 is a function of the x-Cd compounds in the case of the 3D TI as well as the critical width of the mixed Hg1-xCdxTe QW.

Excitonic Gain and Laser Action in Zinc Selenide Based Quantum Confined Structures

NASA Astrophysics Data System (ADS)

Ding, Jian

1992-01-01

Successful doping (both n and p type) and the knowledge obtained through optical pumping studies of ZnSe/ZnCdSe quantum well laser structures have led to the successful realization of ZnCdSe/ZnSe/ZnCdSSe and ZnCdSe/ZnSe injection diode lasers at temperatures above 200K, so far under pulsed excitation, where ZnSe/ZnCdSe quantum wells (single or multiple) are used as the gain media. One of the key design issues in optimizing such diode lasers for eventual room temperature, continuous-wave (cw) operation in technological applications (such as high density optical memories) is the question about the microscopic mechanism responsible for gain and stimulated emission. In other words, are there departures from the standard degenerate electron -hole pair picture which is rooted in population inversion models e.g. for the III-V semiconductor lasers, including quantum wells (QW). That some closer consideration may indeed be appropriate is suggested by the strong excitonic effects which have been recently observed in the optical properties of ZnSe based QW's. In particular, it has been demonstrated that for the type I (Zn,Cd)Se/ZnSe QW system, the quasi-2 dimensional (2D) confinement of electron-hole pairs leads to enhancement of the exciton binding energy E_{rm x}, such that it exceeds the longitudinal optical (LO) phonon energy hbaromega_{sc LO }. In striking contrast to bulk ZnSe, strong, distinct exciton absorption features can be seen well above room temperature. The question hence arises whether exciton effects might also be of fundamental and practical consequence in laser structures. In this thesis, we present experimental evidence to argue that excitons indeed do play a central role in the formation of gain in the (Zn,Cd)Se/ZnSe QW's which have emerged as the prime candidates for diode lasers in the blue-green portion of the spectrum. By employing both steady state and picosecond spectroscopy, we show that the origin of gain and laser action in (Zn,Cd)Se/ZnSe quantum wells in the blue-green is of excitonic nature. Among other observations we find that stimulated emission occurs when excitation takes place resonantly into the n = 1 HH exciton absorption line. Picosecond excite-probe measurements demonstrate directly the existence of gain as well as dynamical process of exciton relaxation. A simple excitonic gain model is also given to explain the phenomena observed in the stimulated emission process in ZnCdSe/ZnSe quantum well structures.

Effects of exenatide twice daily, exenatide once weekly or insulin in patients with type 2 diabetes and baseline HbA1c ≥10.0%: Two pooled analyses including 20 randomised controlled trials.

PubMed

Busch, Robert S; Ruggles, James; Han, Jenny; Hardy, Elise

2017-12-01

Patients with advanced type 2 diabetes (T2D) and high glycated haemoglobin (HbA1c) values can be difficult to treat because of their severe metabolic disease. This pooled analysis examined the treatment effects of exenatide twice daily (BID), exenatide once weekly (QW) and insulin in patients with high baseline HbA1c (≥10.0%). This post hoc analysis used pooled data from 12 and 8 randomised controlled trials of exenatide BID and exenatide QW, respectively. Patients with T2D who completed at least 24 weeks of treatment with exenatide BID, exenatide QW or insulin (insulin glargine, insulin detemir or insulin aspart) were categorised by baseline HbA1c. Patients with HbA1c ≥10.0% were included in the analysis. Both exenatide and insulin reduced HbA1c (mean ± SE reduction: -2.0% ± 0.2% [exenatide] and -2.1% ± 0.2% [insulin] in the exenatide BID studies, and -2.6% ± 0.1% [exenatide] and -2.1% ± 0.2% [insulin] in the exenatide QW studies; all P < .001). Body weight decreased with exenatide and increased with insulin. Systolic blood pressure decreased with exenatide QW. Insulin dose increased over the course of treatment. The most common adverse events with exenatide were gastrointestinal. Insulin was associated with some hypoglycaemia risk. Hypoglycaemia events occurred infrequently with exenatide when given without sulphonylureas. For patients with high HbA1c, treatment with exenatide or insulin both improved glycaemic control. Given the associated weight loss and low risk of hypoglycaemia, exenatide may be a suitable alternative to treatment with insulin in certain patients with T2D and high HbA1c. © 2017 John Wiley & Sons Ltd.

A phase 1b study of isatuximab plus lenalidomide and dexamethasone for relapsed/refractory multiple myeloma.

PubMed

Martin, Thomas; Baz, Rachid; Benson, Don M; Lendvai, Nikoletta; Wolf, Jeffrey; Munster, Pamela; Lesokhin, Alexander M; Wack, Claudine; Charpentier, Eric; Campana, Frank; Vij, Ravi

2017-06-22

This phase 1b, open-label, dose-escalation study assessed the safety, efficacy, and pharmacokinetics of anti-CD38 monoclonal antibody isatuximab given in 2 schedules (3, 5, or 10 mg/kg every other week [Q2W] or 10 or 20 mg/kg weekly [QW] for 4 weeks and then Q2W thereafter [QW/Q2W]), in combination with lenalidomide 25 mg (days 1-21) and dexamethasone 40 mg (QW), in patients with relapsed/refractory multiple myeloma (RRMM). Patients received 28-day treatment cycles; the primary objective was to determine the maximum tolerated dose (MTD) of isatuximab with lenalidomide and dexamethasone. Fifty-seven patients (median 5 [range 1-12] prior regimens; 83% refractory to previous lenalidomide therapy) were treated. Median duration of dosing was 36.4 weeks; 15 patients remained on treatment at data cutoff. Isatuximab-lenalidomide-dexamethasone was generally well tolerated with only 1 dose-limiting toxicity reported (grade 3 pneumonia at 20 mg/kg QW/Q2W); the MTD was not reached. The most common isatuximab-related adverse events were infusion-associated reactions (IARs) (56%), which were grade 1/2 in 84% of patients who had an IAR and predominantly occurred during the first infusion. In the efficacy-evaluable population, the overall response rate (ORR) was 56% (29/52) and was similar between the 10 mg/kg Q2W and 10 and 20 mg/kg QW/Q2W cohorts. The ORR was 52% in 42 evaluable lenalidomide-refractory patients. Overall median progression-free survival was 8.5 months. Isatuximab exposure increased in a greater than dose-proportional manner; isatuximab and lenalidomide pharmacokinetic parameters appeared independent. These data suggest that isatuximab combined with lenalidomide and dexamethasone is active and tolerated in heavily pretreated patients with RRMM. This trial was registered at www.clinicaltrials.gov as #NCT01749969. © 2017 by The American Society of Hematology.

1.55 um aluminum gallium indium arsenide strained MQW laser diodes

NASA Astrophysics Data System (ADS)

Yang, Chi

At the 1.55 mum eye-safe, telecommunications operating wavelength, semiconductor diode lasers must have low threshold currents and operate at high temperatures without thermoelectric coolers. Existing diode lasers in this wavelength range based on the GaInAsP/InP materials system are very sensitive to operating temperature. To obtain high temperature, high power 1.55 mum semiconductor diode lasers, the AlGaInAs/InP materials system with strained quantum well (QW) active regions was investigated with the goal of improving temperature performance. A set of lasers with active regions consisting of different numbers of QWs (2 to 4) and different QW strains (1.2% and 1.6%) were designed taking into account the quaternary alloy bandgap of AlGaInAs, the effect of strain on the bandgap, and the quantum size effects within the QW. The active region growth temperature was optimized using photoluminescence intensity. The wafers were first processed into broad-area lasers and measured under pulsed injection. The characteristic threshold current temperature, T0, for all AlGaInAs lasers was higher (60-70 K) than for GaInAsP lasers. No strong dependence of temperature parameters on strain was observed, while properties varied significantly with the number of QWs. With more QWs, both internal efficiency and T0 increases, but internal loss increases, reducing the characteristic temperature of the differential efficiency T1. The results show that uncooled laser operation at 1.55 mum is very promising with strained AlGaInAs QWs. Ridge waveguide devices demonstrated low threshold and high output power as well as good temperature performance under continuous wave operation. Devices with different ridge heights were fabricated from one wafer and their performance was compared. It was found that current spreading was significant in these devices and a simple current density-versus-applied voltage analysis was developed to determine the spreading factor. The analysis shows that the current spreading was not effectively limited until etching went below the doped cladding layer. A recombination coefficient analysis was performed to investigate the effect of strain on Auger recombination predicted by theory. An indirect method to infer both the nonradiative recombination coefficient and the Auger recombination coefficient was initially used. The measured values of the recombination coefficients were consistent with theoretical predictions and measurements based on other material systems. The Auger recombination was lower than expected, indicating that Auger recombination is reduced in these strained QWs. To understand the carrier dynamics, impedance measurements were carried out for the first time in AlGaInAs strained QW lasers. A small-signal, sub-threshold equivalent circuit model was derived from the laser rate equations to model the measured laser impedance. Several characteristic carrier lifetimes were obtained directly from these electrical impedance measurements. From the temperature dependence of the QW escape time, it was found that hole rather than electron leakage is dominant in the AlGaInAs system due to the relatively low valence band offset. This may explain why the improvement of T0 in AlGaInAs QW 1.55 mum active regions is limited.

Computational Modeling and Simulation of Film-Condensation

DTIC Science & Technology

2013-01-18

different cases considered in the present work. Table 2: Four different cases corresponding to various thermal boundary conditions ( CWT : constant wall...temperature; UHF: uniform heat flux; and CHT: convection heat transfer) on the channel walls. Cases (a) (b) (c) (d) Top wall BC CWT : Tw2>Tsat UHF: qw...CHT: h & T∞ >Tsat CHT Bottom Wall BC CWT : Tw1<Tsat CWT : Tw1<Tsat CWT : Tw1<Tsat UHF: qw   Page 12 of 18   In the above table, T y

Piezoelectric Field Enhanced Second-Order Nonlinear Optical Susceptibilities in Wurtzite GaN/AlGaN Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Chuang, S.-L.; Ning, C. Z.; Woo, Alex (Technical Monitor)

1999-01-01

Second-order nonlinear optical processes including second-harmonic generation, optical rectification, and difference-frequency generation associated with intersubband transitions in wurtzite GaN/AlGaN quantum well (QW) are investigated theoretically. Taking into account the strain-induced piezoelectric (PZ) effects, we solve the electronic structure of the QW from coupled effective-mass Schrodinger equation and Poisson equation including the exchange-correlation effect under the local-density approximation. We show that the large PZ field in the QW breaks the symmetry of the confinement potential profile and leads to large second-order susceptibilities. We also show that the interband optical pump-induced electron-hole plasma results in an enhancement in the maximum value of the nonlinear coefficients and a redshift of the peak position in the nonlinear optical spectrum. By use of the difference-frequency generation, THz radiation can be generated from a GaN/Al(0.75)Ga(0.25)N with a pump laser of 1.55 micron.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

NASA Astrophysics Data System (ADS)

Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

2017-11-01

Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

Modeling of Noise and Resistance of Semimetal Hg1-xCdxTe Quantum Well used as a Channel for THz Hot-Electron Bolometer.

PubMed

Melezhik, E O; Gumenjuk-Sichevska, J V; Sizov, F F

2016-12-01

Noise characteristics and resistance of semimetal-type mercury-cadmium-telluride quantum wells (QWs) at the liquid nitrogen temperature are studied numerically, and their dependence on the QW parameters and on the electron concentration is established. The QW band structure calculations are based on the full 8-band k.p Hamiltonian. The electron mobility is simulated by the direct iterative solution of the Boltzmann transport equation, which allows us to include correctly all the principal scattering mechanisms, elastic as well as inelastic.We find that the generation-recombination noise is strongly suppressed due to the very fast recombination processes in semimetal QWs. Hence, the thermal noise should be considered as a main THz sensitivity-limiting mechanism in those structures. Optimization of a semimetal Hg1-xCdxTe QW to make it an efficient THz bolometer channel should include the increase of electron concentration in the well and tuning the molar composition x close to the gapless regime.

High-polarization-discriminating infrared detection using a single quantum well sandwiched in plasmonic micro-cavity.

PubMed

Li, Qian; Li, ZhiFeng; Li, Ning; Chen, XiaoShuang; Chen, PingPing; Shen, XueChu; Lu, Wei

2014-09-11

Polarimetric imaging has proved its value in medical diagnostics, bionics, remote sensing, astronomy, and in many other wide fields. Pixel-level solid monolithically integrated polarimetric imaging photo-detectors are the trend for infrared polarimetric imaging devices. For better polarimetric imaging performance the high polarization discriminating detectors are very much critical. Here we demonstrate the high infrared light polarization resolving capabilities of a quantum well (QW) detector in hybrid structure of single QW and plasmonic micro-cavity that uses QW as an active structure in the near field regime of plasmonic effect enhanced cavity, in which the photoelectric conversion in such a plasmonic micro-cavity has been realized. The detector's extinction ratio reaches 65 at the wavelength of 14.7 μm, about 6 times enhanced in such a type of pixel-level polarization long wave infrared photodetectors. The enhancement mechanism is attributed to artificial plasmonic modulation on optical propagation and distribution in the plasmonic micro-cavities.

High-Polarization-Discriminating Infrared Detection Using a Single Quantum Well Sandwiched in Plasmonic Micro-Cavity

PubMed Central

Li, Qian; Li, ZhiFeng; Li, Ning; Chen, XiaoShuang; Chen, PingPing; Shen, XueChu; Lu, Wei

2014-01-01

Polarimetric imaging has proved its value in medical diagnostics, bionics, remote sensing, astronomy, and in many other wide fields. Pixel-level solid monolithically integrated polarimetric imaging photo-detectors are the trend for infrared polarimetric imaging devices. For better polarimetric imaging performance the high polarization discriminating detectors are very much critical. Here we demonstrate the high infrared light polarization resolving capabilities of a quantum well (QW) detector in hybrid structure of single QW and plasmonic micro-cavity that uses QW as an active structure in the near field regime of plasmonic effect enhanced cavity, in which the photoelectric conversion in such a plasmonic micro-cavity has been realized. The detector's extinction ratio reaches 65 at the wavelength of 14.7 μm, about 6 times enhanced in such a type of pixel-level polarization long wave infrared photodetectors. The enhancement mechanism is attributed to artificial plasmonic modulation on optical propagation and distribution in the plasmonic micro-cavities. PMID:25208580

Constituent quarks and systematic errors in mid-rapidity charged multiplicity (dNch / dη distributions

NASA Astrophysics Data System (ADS)

Tannenbaum, Michael

2017-01-01

Although it was demonstrated more than 13 years ago that the increase in midrapidity dNch / dη with increasing centrality of Au+Au collisions at RHIC was linearly proportional to the number of constituent quark participants (or ``wounded quarks'', QW) in the collision, it was only in the last few years that generating the spatial positions of the three quarks in a nucleon according to the Fourier transform of the measured electric charge form factor of the proton could be used to connect dNch / dη /QW as a function of centrality in p(d) +A and A +A collisions with the same value of dNch / dη /QW determined in p +p collisions. One calculation, which only compared its calculated dNch / dη /QW in p +p at √{sNN} = 200 GeV to the least central of 12 centrality bin measurements in Au +Au by PHENIX, claimed that the p +p value was higher by ``about 30%'' from the band of measurements vs. centrality. However the clearly quoted systematic errors were ignored for which a 1 standard deviation systematic shift would move all the 12 Au +Au data points to within 1.3 standard deviations of the p +p value, or if the statistical and systematic errors are added in quadrature a difference of 35 +/- 21%. Rearch supported by U.S. Department of Energy, Contract No. DE-SC0012704.

Impacts of Carrier Transport and Deep Level Defects on Delayed Cathodoluminescence in Droop-Mitigating InGaN/GaN LEDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Zhibo; Singh, Akshay; Chesin, Jordan

Prevalent droop mitigation strategies in InGaN-based LEDs require structural and/or compositional changes in the active region but are accompanied by a detrimental reduction in external quantum efficiency (EQE) due to increased Shockley-Read-Hall recombination. Understanding the optoelectronic impacts of structural modifications in InGaN/GaN quantum wells (QW) remains critical for emerging high-power LEDs. In this work, we use a combination of electron microscopy tools along with standard electrical characterization to investigate a wide range of low-droop InGaN/GaN QW designs. We find that chip-scale EQE is uncorrelated with extended well-width fluctuations observed in scanning transmission electron microscopy. Further, we observe delayed cathodoluminescence (CL)more » response from designs in which calculated band profiles suggest facile carrier escape from individual QWs. Samples with the slowest CL responses also exhibit the lowest EQEs and highest QW defect densities in deep level optical spectroscopy. We propose a model in which the electron beam (i) passivates deep level defect states and (ii) drives charge carrier accumulation and subsequent reduction of the built-in field across the multi-QW active region, resulting in delayed radiative recombination. Finally, we correlate CL rise dynamics with capacitance-voltage measurements and show that certain early-time components of the CL dynamics reflect the open circuit carrier population within one or more QWs.« less

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yi; Liu, Bin, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn; Zhang, Rong, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn

Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620 nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%–53% as compared tomore » that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.« less

Advanced indium phosphide based monolithic integration using quantum well intermixing and MOCVD regrowth

NASA Astrophysics Data System (ADS)

Raring, James W.

The proliferation of the internet has fueled the explosive growth of telecommunications over the past three decades. As a result, the demand for communication systems providing increased bandwidth and flexibility at lower cost continues to rise. Lightwave communication systems meet these demands. The integration of multiple optoelectronic components onto a single chip could revolutionize the photonics industry. Photonic integrated circuits (PIC) provide the potential for cost reduction, decreased loss, decreased power consumption, and drastic space savings over conventional fiber optic communication systems comprised of discrete components. For optimal performance, each component within the PIC may require a unique epitaxial layer structure, band-gap energy, and/or waveguide architecture. Conventional integration methods facilitating such flexibility are increasingly complex and often result in decreased device yield, driving fabrication costs upward. It is this trade-off between performance and device yield that has hindered the scaling of photonic circuits. This dissertation presents high-functionality PICs operating at 10 and 40 Gb/s fabricated using novel integration technologies based on a robust quantum-well-intermixing (QWI) method and metal organic chemical vapor deposition (MOCVD) regrowth. We optimize the QWI process for the integration of high-performance quantum well electroabsorption modulators (QW-EAM) with sampled-grating (SG) DBR lasers to demonstrate the first widely-tunable negative chirp 10 and 40 Gb/s EAM based transmitters. Alone, QWI does not afford the integration of high-performance semiconductor optical amplifiers (SOA) and photodetectors with the transmitters. To overcome this limitation, we have developed a novel high-flexibility integration scheme combining MOCVD regrowth with QWI to merge low optical confinement factor SOAs and 40 Gb/s uni-traveling carrier (UTC) photodiodes on the same chip as the QW-EAM based transmitters. These high-saturation power receiver structures represent the state-of-the-art technologies for even discrete components. Using the novel integration technology, we present the first widely-tunable single-chip device capable of transmit and receive functionality at 40 Gb/s. This device monolithically integrates tunable lasers, EAMs, SOAs, and photodetectors with performance that rivals optimized discrete components. The high-flexibility integration scheme requires only simple blanket regrowth steps and thus breaks the performance versus yield trade-off plaguing conventional fabrication techniques employed for high-functionality PICs.

Optical Characterization of IV-VI Mid-Infrared VCSEL

DTIC Science & Technology

2002-01-01

vertical cavity surface emitting laser ( VCSEL ). A power...il quantum well (QW) devices [5], there has little progress until recently in developing mid-IR vertical cavity surface emitting laser ( VCSEL ). This...structures and PbSrSe thin films were grown on Bat; (111) substrates by molecular beam epitaxy ( MBE ) and characterized by Fourier transform infi-ared

Electrically-detected ESR in silicon nanostructures inserted in microcavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii

2014-02-21

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ- barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance, with internal GHz Josephson emission within frameworks of the normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane.

Implementation of an FIR Band Pass Filter Using a Bit-Slice Processor.

DTIC Science & Technology

1987-06-01

R14 S IMPLEMENTATION OF AN FIR BND PASS FILTER USING A 1 /2 S" IT-SLICE PROCESSOR(U) NAVAL POSTGRADUATE SCOOL N UTEREY CA D W PURDY JUN 97...WILRSIFIED F/I 12/6mmhhmmhhmhhhhl EIIIIIIEIIIII IIIIIIEEIIIEI IIIIIIIIIIIIIl IIIIIIIIIIIIIu EIIIIIIIIIIIII - U󈧖 ~1I.25 1 .41.6 -qwr- -qw qw wV vw- .W sw...Ae 10 .w w ’ 1 - w* lo % % q* NAVAL POSTGRADUATE SCHOOL 0 Monterey, California 0 oi a ’: L t ",, I-’ ; OCT 0 �." THESIS IMPLEMENTATION OF AN FIR

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.

PubMed

Humphreys, C J; Griffiths, J T; Tang, F; Oehler, F; Findlay, S D; Zheng, C; Etheridge, J; Martin, T L; Bagot, P A J; Moody, M P; Sutherland, D; Dawson, P; Schulz, S; Zhang, S; Fu, W Y; Zhu, T; Kappers, M J; Oliver, R A

2017-05-01

We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (0001) polar and (11-20) non-polar InGaN quantum wells (QWs). This paper provides an overview of the results. Polar (0001) InGaN in QWs is a random alloy, with In replacing Ga randomly. The InGaN QWs have atomic height interface steps, resulting in QW width fluctuations. The electrons are localised at the top QW interface by the built-in electric field and the well-width fluctuations, with a localisation energy of typically 20meV. The holes are localised near the bottom QW interface, by indium fluctuations in the random alloy, with a localisation energy of typically 60meV. On the other hand, the non-polar (11-20) InGaN QWs contain nanometre-scale indium-rich clusters which we suggest localise the carriers and produce longer wavelength (lower energy) emission than from random alloy non-polar InGaN QWs of the same average composition. The reason for the indium-rich clusters in non-polar (11-20) InGaN QWs is not yet clear, but may be connected to the lower QW growth temperature for the (11-20) InGaN QWs compared to the (0001) polar InGaN QWs. Copyright © 2017 The Authors. Published by Elsevier B.V. All rights reserved.

Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well

NASA Astrophysics Data System (ADS)

Murphy, Graham P.; Gough, John J.; Higgins, Luke J.; Karanikolas, Vasilios D.; Wilson, Keith M.; Garcia Coindreau, Jorge A.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Bradley, A. Louise

2017-03-01

Non-radiative energy transfer (NRET) can be an efficient process of benefit to many applications including photovoltaics, sensors, light emitting diodes and photodetectors. Combining the remarkable optical properties of quantum dots (QDs) with the electrical properties of quantum wells (QWs) allows for the formation of hybrid devices which can utilize NRET as a means of transferring absorbed optical energy from the QDs to the QW. Here we report on plasmon-enhanced NRET from semiconductor nanocrystal QDs to a QW. Ag nanoparticles in the form of colloids and ordered arrays are used to demonstrate plasmon-mediated NRET from QDs to QWs with varying top barrier thicknesses. Plasmon-mediated energy transfer (ET) efficiencies of up to ˜25% are observed with the Ag colloids. The distance dependence of the plasmon-mediated ET is found to follow the same d -4 dependence as the direct QD to QW ET. There is also evidence for an increase in the characteristic distance of the interaction, thus indicating that it follows a Förster-like model with the Ag nanoparticle-QD acting as an enhanced donor dipole. Ordered Ag nanoparticle arrays display plasmon-mediated ET efficiencies up to ˜21%. To explore the tunability of the array system, two arrays with different geometries are presented. It is demonstrated that changing the geometry of the array allows a transition from overall quenching of the acceptor QW emission to enhancement, as well as control of the competition between the QD donor quenching and ET rates.

Long range spin qubit interaction mediated by microcavity polaritons

NASA Astrophysics Data System (ADS)

Piermarocchi, Carlo; Quinteiro, Guillermo F.; Fernandez-Rossier, Joaquin

2007-03-01

Planar microcavities are semiconductor devices that confine the electromagnetic field by means of two parallel semiconductor mirrors. When a quantum well (QW) is placed inside a planar microcavity, the excitons in the QW couple to confined electromagnetic modes. In the strong-coupling regime, excitons and cavity photons give rise to new states, cavity polaritons, which appear in two branches separated by a vacuum Rabi splitting. We study theoretically the dynamics of localized spins in the QW interacting with cavity polaritons. Our calculations consider localized electron spins of shallow neutral donors in GaAs (e.g., Si), but the theory is valid for other impurities and host semiconductors, as well as to charged quantum dots. In the strong-coupling regime, the vacuum Rabi splitting introduces anisotropies in the spin coupling. Moreover, due to their photon-like mass, polaritons provide an extremely long spin coupling range. This suggests the realization of two-qubit all-optical quantum operations within tens of picoseconds with spins localized as far as hundreds of nanometers apart. [G. F. Quinteiro et al., Phys. Rev. Lett. 97 097401, (2006)].

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakajima, Yoshitake; Dapkus, P. Daniel

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I{sub 1} type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaNmore » QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.« less

Strong ferromagnetic proximity polarization in ferromagnetic metal MnGa/n-type GaAs quantum well junction

NASA Astrophysics Data System (ADS)

Ji, Xiaochen; Shen, Chao; Wu, Yuanjun; Lu, Jun; Zhao, Jianhua; Zheng, Houzhi

2017-11-01

By biasing a ferromagnetic metal MnGa/10 nm-thick, n-type GaAs quantum well (QW) junction from negative to positive, it is found that its spin dynamics at zero magnetic field is composed of two components with opposite signs. One is excited by a circularly polarized pump beam. The other is induced by ferromagnetic proximity polarization (FPP), which is continuously enhanced as the bias increases towards the positive direction. The time-resolved Kerr rotations have also been measured at a magnetic field of 0.9 Tesla. A phase reversion of Larmor precession is observed as the bias passes through  +0.5 V. Following simple quantum mechanics, we become aware of the fact that the transmission and reflection rates of electrons at the interface of MnGa/n-type GaAs QW are enhanced by a factor of ν , which is the attempting frequency of electron onto a ferromagnet/semiconductor interface. That gives a reasonable explanation why the FPP effect in our MnGa/n-type GaAs QW junction is greatly enhanced as biasing it into forward direction.

Surface segregation and the Al problem in GaAs quantum wells

NASA Astrophysics Data System (ADS)

Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Shayegan, M.; Pfeiffer, L. N.

2018-03-01

Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped AlxGa1 -xAs /GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the AlxGa1 -xAs barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the AlxGa1 -xAs barrier beneath the QW is increased, which we attribute to the surface segregation of oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.

Dynamic spin injection into a quantum well coupled to a spin-split bound state

NASA Astrophysics Data System (ADS)

Maslova, N. S.; Rozhansky, I. V.; Mantsevich, V. N.; Arseyev, P. I.; Averkiev, N. S.; Lähderanta, E.

2018-05-01

We present a theoretical analysis of dynamic spin injection due to spin-dependent tunneling between a quantum well (QW) and a bound state split in spin projection due to an exchange interaction or external magnetic field. We focus on the impact of Coulomb correlations at the bound state on spin polarization and sheet density kinetics of the charge carriers in the QW. The theoretical approach is based on kinetic equations for the electron occupation numbers taking into account high order correlation functions for the bound state electrons. It is shown that the on-site Coulomb repulsion leads to an enhanced dynamic spin polarization of the electrons in the QW and a delay in the carriers tunneling into the bound state. The interplay of these two effects leads to nontrivial dependence of the spin polarization degree, which can be probed experimentally using time-resolved photoluminescence experiments. It is demonstrated that the influence of the Coulomb interactions can be controlled by adjusting the relaxation rates. These findings open a new way of studying the Hubbard-like electron interactions experimentally.

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

NASA Astrophysics Data System (ADS)

Nakajima, Yoshitake; Dapkus, P. Daniel

2016-08-01

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I1 type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaN QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.

Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stettner, T., E-mail: Thomas.Stettner@wsi.tum.de, E-mail: Gregor.Koblmueller@wsi.tum.de, E-mail: Jonathan.Finley@wsi.tum.de; Zimmermann, P.; Loitsch, B.

2016-01-04

We demonstrate the growth and single-mode lasing operation of GaAs-AlGaAs core-multishell nanowires (NW) with radial single and multiple GaAs quantum wells (QWs) as active gain media. When subject to optical pumping lasing emission with distinct s-shaped input-output characteristics, linewidth narrowing and emission energies associated with the confined QWs are observed. Comparing the low temperature performance of QW NW laser structures having 7 coaxial QWs with a nominally identical structure having only a single QW shows that the threshold power density reduces several-fold, down to values as low as ∼2.4 kW/cm{sup 2} for the multiple QW NW laser. This confirms that themore » individual radial QWs are electronically weakly coupled and that epitaxial design can be used to optimize the gain characteristics of the devices. Temperature-dependent investigations show that lasing prevails up to 300 K, opening promising new avenues for efficient III–V semiconductor NW lasers with embedded low-dimensional gain media.« less

Phosphor-free, white-light LED under alternating-current operation.

PubMed

Yao, Yu-Feng; Chen, Hao-Tsung; Su, Chia-Ying; Hsieh, Chieh; Lin, Chun-Han; Kiang, Yean-Woei; Yang, C C

2014-11-15

A light-emitting diode structure, consisting of a p-GaN layer, a CdZnO/ZnO quantum-well (QW) structure, a high-temperature-grown ZnO layer, and a GaZnO layer, is fabricated. Under forward bias, the device effectively emits green-yellow light, from the QW structure, at the rim of device mesa. Under reverse bias, electrons in the valence band of the p-GaN layer move into the conduction band of the GaZnO layer, through a QW-state-assisted tunneling process, to recombine with the injected holes in the GaZnO layer, for emitting yellow-red and shallow ultraviolet light over the entire mesa area. Also, carrier recombination in the p-GaN layer produces blue light. By properly designing the thickness of the high-temperature grown ZnO layer, the emission intensity under forward bias can be controlled such that, under alternating-current operation at 60 Hz, the spatial and spectral mixtures of the emitted lights of complementary colors, under forward and reverse biases, result in white light generation based on persistence of vision.

The Combined Influence of Hydrostatic Pressure and Temperature on Nonlinear Optical Properties of GaAs/Ga0.7Al0.3As Morse Quantum Well in the Presence of an Applied Magnetic Field.

PubMed

Zhang, Zhi-Hai; Yuan, Jian-Hui; Guo, Kang-Xian

2018-04-25

Studies aimed at understanding the nonlinear optical (NLO) properties of GaAs/Ga 0.7 Al 0.3 As morse quantum well (QW) have focused on the intersubband optical absorption coefficients (OACs) and refractive index changes (RICs). These studies have taken two complimentary approaches: (1) The compact-density-matrix approach and iterative method have been used to obtain the expressions of OACs and RICs in morse QW. (2) Finite difference techniques have been used to obtain energy eigenvalues and their corresponding eigenfunctions of GaAs/Ga 0.7 Al 0.3 As morse QW under an applied magnetic field, hydrostatic pressure, and temperature. Our results show that the hydrostatic pressure and magnetic field have a significant influence on the position and the magnitude of the resonant peaks of the nonlinear OACs and RICs. Simultaneously, a saturation case is observed on the total absorption spectrum, which is modulated by the hydrostatic pressure and magnetic field. Physical reasons have been analyzed in depth.

Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Couto, O. D. D., E-mail: odilon@ifi.unicamp.br; Almeida, P. T. de; Santos, G. E. dos

We investigate optical transitions and carrier dynamics in hybrid structures containing type-I GaAs/AlGaAs quantum wells (QWs) and type-II GaSb/AlGaAs quantum dots (QDs). We show that the optical recombination of photocreated electrons confined in the QWs with holes in the QDs and wetting layer can be modified according to the QW/QD spatial separation. In particular, for low spacer thicknesses, the QW optical emission can be suppressed due to the transference of holes from the QW to the GaSb layer, favoring the optical recombination of spatially separated carriers, which can be useful for optical memory and solar cell applications. Time-resolved photoluminescence (PL)more » measurements reveal non-exponential recombination dynamics. We demonstrate that the PL transients can only be quantitatively described by considering both linear and quadratic terms of the carrier density in the bimolecular recombination approximation for type-II semiconductor nanostructures. We extract long exciton lifetimes from 700 ns to 5 μs for QDs depending on the spacer layer thickness.« less

Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor

NASA Astrophysics Data System (ADS)

Roodenko, K.; Choi, K. K.; Clark, K. P.; Fraser, E. D.; Vargason, K. W.; Kuo, J.-M.; Kao, Y.-C.; Pinsukanjana, P. R.

2016-09-01

Performance of quantum well infrared photodetector (QWIP) device parameters such as detector cutoff wavelength and the dark current density depend strongly on the quality and the control of the epitaxy material growth. In this work, we report on a methodology to precisely control these critical material parameters for long wavelength infrared (LWIR) GaAs/AlGaAs QWIP epi wafers grown by multi-wafer production Molecular beam epitaxy (MBE). Critical growth parameters such as quantum well (QW) thickness, AlGaAs composition and QW doping level are discussed.

Valence-band structure of the ferromagnetic semiconductor GaMnAs studied by spin-dependent resonant tunneling spectroscopy.

PubMed

Ohya, Shinobu; Muneta, Iriya; Hai, Pham Nam; Tanaka, Masaaki

2010-04-23

The valence-band structure and the Fermi level (E(F)) position of ferromagnetic-semiconductor GaMnAs are quantitatively investigated by electrically detecting the resonant tunneling levels of a GaMnAs quantum well (QW) in double-barrier heterostructures. The resonant level from the heavy-hole first state is clearly observed in the metallic GaMnAs QW, indicating that holes have a high coherency and that E(F) exists in the band gap. Clear enhancement of tunnel magnetoresistance induced by resonant tunneling is demonstrated in these double-barrier heterostructures.

Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: influence on the catastrophic optical damage

NASA Astrophysics Data System (ADS)

Souto, Jorge; Pura, José Luis; Jiménez, Juan

2017-06-01

In this work we study the catastrophic optical damage (COD) of graded-index separate confinement heterostructure quantum well (QW) laser diodes based on AlGaAs/GaAs. The emphasis is placed on the impact that the nanoscale physical properties have on the operation and degradation of the active layers of these devices. When these laser diodes run in continuous-wave mode with high internal optical power densities, the QW and guide layers can experiment very intense local heating phenomena that lead to device failure. A thermo-mechanical model has been set up to study the mechanism of degradation. This model has been solved by applying finite element methods. A variety of physical factors related to the materials properties, which play a paramount role in the laser degradation process, have been considered. Among these, the reduced thicknesses of the QW and the guides lead to thermal conductivities smaller than the bulk figures, which are further reduced as extended defects develop in these layers. This results in a progressively deteriorating thermal management in the device. To the best of our knowledge, this model for laser diodes is the first one to have taken into account low scale mechanical effects that result in enhanced strengths in the structural layers. Moreover, the consequences of these conflicting size-dependent properties on the thermo-mechanical behaviour on the route to COD are examined. Subsequently, this approach opens the possibility of taking advantage of these properties in order to design robust diode lasers (or other types of power devices) in a controlled manner.

Catastrophic optical bulk degradation in high-power single- and multi-mode InGaAs-AlGaAs strained QW lasers: part II

NASA Astrophysics Data System (ADS)

Sin, Yongkun; Ayvazian, Talin; Brodie, Miles; Lingley, Zachary

2018-03-01

High-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers are critical components for both terrestrial and space satellite communications systems. Since these lasers predominantly fail by catastrophic and sudden degradation due to catastrophic optical damage (COD), it is especially crucial for space satellite applications to investigate reliability, failure modes, precursor signatures of failure, and degradation mechanisms of these lasers. Our group reported a new failure mode in MM and SM InGaAs-AlGaAs strained QW lasers in 2009 and 2016, respectively. Our group also reported in 2017 that bulk failure due to catastrophic optical bulk damage (COBD) is the dominant failure mode of both SM and MM lasers that were subject to long-term life-tests. For the present study, we continued our physics of failure investigation by performing long-term life-tests followed by failure mode analysis (FMA) using nondestructive and destructive micro-analytical techniques. We performed long-term accelerated life-tests on state-of-the-art SM and MM InGaAs- AlGaAs strained QW lasers under ACC mode. Our life-tests have accumulated over 25,000 test hours for SM lasers and over 35,000 test hours for MM lasers. We first employed electron beam induced current (EBIC) technique to identify failure modes of degraded SM lasers by observing dark line defects. All the SM failures that we studied showed catastrophic and sudden degradation and all of these failures were bulk failures. Since degradation mechanisms responsible for COBD are still not well understood, we also employed other techniques including focused ion beam (FIB) and high-resolution TEM to further study dark line defects and dislocations in post-aged lasers. Keywor

Phase Ib study of codrituzumab in combination with sorafenib in patients with non-curable advanced hepatocellular carcinoma (HCC)

PubMed Central

Yen, Chia-Jui; Hsu, Chih-Hung; O’Donoghue, Joseph; Beylergil, Volkan; Ruan, Shutian; Pandit-Taskar, Neeta; Gansukh, Bolorsukh; Lyashchenko, Serge K.; Ma, Jennifer; Wan, Peter; Shao, Yu-Yun; Lin, Zhong-Zhe; Frenette, Catherine; O’Neil, Bert; Schwartz, Lawrence; Smith-Jones, Peter M.; Ohtomo, Toshihiko; Tanaka, Takayoshi; Morikawa, Hideo; Maki, Yuko; Ohishi, Norihisa; Chen, Ya-Chi; Agajanov, Tamara; Boisserie, Frederic; Di Laurenzio, Laura; Lee, Ray; Larson, Steven M.; Cheng, Ann-Lii; Carrasquilo, Jorge A.

2017-01-01

Purpose Codrituzumab, a humanized antibody against glypican-3, is highly expressed in HCC. A phase I study evaluated the combination with sorafenib in HCC. Patients and methods In a 3 + 3 design, codrituzumab was given intravenously in various doses with sorafenib 400 mg twice daily to patients with advanced HCC, age ≥18, ECOG 0–1, Child-Pugh A and B7, adequate organ functions, and no prior systemic therapy, with tumor assessment by RECIST 1.0 and safety by CTCAE 3.0. PK and pre, during, and post-therapy 124I radiolabeled codrituzumab PET scan imaging were performed. Results 41 patients were enrolled: 2.5 mg/kg weekly (qw) (12), 5 mg/kg qw (12), 10 mg/kg qw (3), 1600 mg every 2 weeks (q2w) (6), and 1600 mg qw (7). Two drug limiting toxicities occurred: grade 3 hyponatremia at 5 mg/kg and grade 3 hyponatremia and hyperglycemia at 1600 mg q2w. Adverse events occurred in 80% of patients, including at least one ≥grade 3: ten (25%) increased AST, three (7.5%) increased ALT, and ten (25%) increased lipase. There were no responses and nine (25.7%) had stable disease. PK Cmax and AUCt of codrituzumab and sorafenib were comparable to single-agent data. Thirteen out of 14 patients showed 124I radiolabeled codrituzumab uptake in tumor. In all three patients who underwent a post-progression PET, glypican-3 remained expressed. Conclusion Codrituzumab plus sorafenib were tolerated at 1600 mg q2w and 400 mg bid, respectively, with no responses. Codrituzumab exerts selective distribution to HCC cells, and GPC3 does not show any down-regulation post-progression (NCT00976170). PMID:28120036

A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk and quantum well structures

NASA Astrophysics Data System (ADS)

Dixit, V. K.; Porwal, S.; Singh, S. D.; Sharma, T. K.; Ghosh, Sandip; Oak, S. M.

2014-02-01

Temperature dependence of the photoluminescence (PL) peak energy of bulk and quantum well (QW) structures is studied by using a new phenomenological model for including the effect of localized states. In general an anomalous S-shaped temperature dependence of the PL peak energy is observed for many materials which is usually associated with the localization of excitons in band-tail states that are formed due to potential fluctuations. Under such conditions, the conventional models of Varshni, Viña and Passler fail to replicate the S-shaped temperature dependence of the PL peak energy and provide inconsistent and unrealistic values of the fitting parameters. The proposed formalism persuasively reproduces the S-shaped temperature dependence of the PL peak energy and provides an accurate determination of the exciton localization energy in bulk and QW structures along with the appropriate values of material parameters. An example of a strained InAs0.38P0.62/InP QW is presented by performing detailed temperature and excitation intensity dependent PL measurements and subsequent in-depth analysis using the proposed model. Versatility of the new formalism is tested on a few other semiconductor materials, e.g. GaN, nanotextured GaN, AlGaN and InGaN, which are known to have a significant contribution from the localized states. A quantitative evaluation of the fractional contribution of the localized states is essential for understanding the temperature dependence of the PL peak energy of bulk and QW well structures having a large contribution of the band-tail states.

Isolation and initial characterization of the tellurite reducing moderately halophilic bacterium, Salinicoccus sp. strain QW6.

PubMed

Amoozegar, Mohammad Ali; Ashengroph, Morahem; Malekzadeh, Feridon; Reza Razavi, Mohamad; Naddaf, Saied; Kabiri, Mahboubeh

2008-01-01

Among the 49 strains of moderately halophilic bacteria isolated from the salty environments of Iran, a Gram-positive coccus designated as strain QW6 showed high capacity in the removal of toxic oxyanions of tellurium in a wide range of culture medium factors including pH (5.5-10.5), temperature (25-45 degrees C), various salts including NaCl, KCl, and Na(2)SO(4) (0.5-4 M), selenooxyanions (2-10 mM), and at different concentrations of potassium tellurite (0.5-1 mM) under aerobic condition. Phenotypic characterization and phylogenetic analyses based on 16S rDNA sequence comparisons indicated that this strain was a member of the genus Salinicoccus. The maximum tellurite removal was exhibited in 1.5M NaCl at 35 degrees C, while the activity reduced by 53% and 47% at 25 and 45 degrees C, respectively. The optimum pH for removal activity was shown to be 7.5, with 90% and 83% reduced removal capacities at the two extreme values of 5.5 and 10, respectively. The impact of different concentrations of selenooxyanions (2-10 mM) on tellurite removal by strain QW6 was evaluated. The ability of strain QW6 in the removal of tellurite in the presence of 6mM selenite increased by 25%. The concentration of toxic potassium tellurite in the supernatant of the bacterial culture medium decreased by 99% (from 0.5 to 0.005 mM) after 6 days and the color of the medium changed to black due to the formation of less toxic elemental tellurium.

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers

NASA Astrophysics Data System (ADS)

Koleske, D. D.; Fischer, A. J.; Bryant, B. N.; Kotula, P. G.; Wierer, J. J.

2015-04-01

InGaN/AlGaN/GaN-based multiple quantum wells (MQWs) with AlGaN interlayers (ILs) are investigated, specifically to examine the fundamental mechanisms behind their increased radiative efficiency at wavelengths of 530-590 nm. The AlzGa1-zN (z 0.38) IL is 1-2 nm thick, and is grown after and at the same growth temperature as the 3 nm thick InGaN quantum well (QW). This is followed by an increase in temperature for the growth of a 10 nm thick GaN barrier layer. The insertion of the AlGaN IL within the MQW provides various benefits. First, the AlGaN IL allows for growth of the InxGa1-xN QW well below typical growth temperatures to achieve higher x (up to 0.25). Second, annealing the IL capped QW prior to the GaN barrier growth improves the AlGaN IL smoothness as determined by atomic force microscopy, improves the InGaN/AlGaN/GaN interface quality as determined from scanning transmission electron microscope images and x-ray diffraction, and increases the radiative efficiency by reducing non-radiative defects as determined by time-resolved photoluminescence measurements. Finally, the AlGaN IL increases the spontaneous and piezoelectric polarization induced electric fields acting on the InGaN QW, providing an additional red-shift to the emission wavelength as determined by Schrodinger-Poisson modeling and fitting to the experimental data. The relative impact of increased indium concentration and polarization fields on the radiative efficiency of MQWs with AlGaN ILs is explored along with implications to conventional longer wavelength emitters.

Silicon Germanium Strained Layers and Heterostructures

NASA Astrophysics Data System (ADS)

Willander, M.; Nur, O.; Jain, S. C.

2004-01-01

The integration of strained-Si1 xGex into Si technology has enhanced the performance and extended the functionality of Si based circuits. The improvement of device performance is observed in both AC as well as DC characteristics of these devices. The category of such devices includes field effect as well as bipolar families. Speed performance in some based circuits has reached limits previously dominated by III-V heterostructures based devices. In addition, for some optoelectronics applications including photodetectors it is now possible to easily integrate strained-Si1 xGex based optical devices into standard Silicon technology. The impact of integrating strained and relaxed Si1 xGex alloys into Si technology is important. It has lead to stimulate Si research as well as offers easy options for performances that requires very complicated and costly process if pure Si has to be used. In this paper we start by discussing the strain and stability of Si1 xGex alloys. The origin and the process responsible for transient enhanced diffusion (TED) in highly doped Si containing layers will be mentioned. Due to the importance of TED for thin highly doped Boron strained-Si1 xGex layers and its degrading consequences, possible suppression design methods will be presented. Quantum well pchannel MOSFETs (QW-PMOSFETs) based on thin buried QW are solution to the low speed and weak current derivability. Different aspects of designing these devices for a better performance are briefly reviewed. Other FETs based on tensile strained Si on relaxed Si1 xGex for n-channel and modulation doped field effect transistors (MODFETs) showed excellent performance. Record AC performance well above 200GHz for fmax is already observed and this record is expected to increase in the coming years. Heterojunction bipolar transistors (HPTs) with thin strained-Si1 xGex highly doped base have lead to optimize the performance of the bipolar technology for many applications easily. The strategies of design and the most important designs of HBTs for optimum AC as well as DC are discussed in details. This technology is now mature enough and that is manifested in the appearance in the market nowadays. Si1 xGex based FETs circuits compatible with standard Si CMOS processes are soon expected to appear in the market. Finally, we briefly discuss the recent advances in Si1 xGex based infrared photodetectors.

Novel quantum well gallium arsenide-based lasers for all transmission windows in optical communication

NASA Astrophysics Data System (ADS)

Tansu, Nelson

The thesis covers the development of novel active regions for high-performance edge-emitting lasers (EEL) and vertical cavity surface-emitting lasers (VCSELs) in optical communication. Three main themes of the thesis cover the design, fabrication, and physics of the novel and alternative active regions for GaAs-based VCSELs for the three optical communications windows at wavelength regimes of 850-nm, 1300-nm, and 1500-nm, with the emphases on the 1300-nm InGaAsN QW GaAs-based active regions and on the novel design of 1500-nm GaAs-based active regions. The studies include the utilization of compressively-strained InGaAsP quantum well (QW) active regions for the 850-nm VCSELs. The research on the long-wavelength lasers covers the design, growth, temperature analysis, carrier transport, and gain analysis of the InGaAsN (lambda = 1.3 mum) quantum well lasers. The novel and original design of the GaAsSb-(In)GaAsN type-II QWs to achieve 1500--3000 nm GaAs-based active regions is discussed in detail.

Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect

DTIC Science & Technology

2011-05-01

SdH) magnetotrans- port measurements at a low temperature (2–15 K ) and a high magnetic field (0–9 T). We also present an EOT scalability study that...Fig. 2. Measured and modeled (a) split Cg–Vg and (b) G−Vg characteristics of an InAs0.8Sb0.2 QW-MOSFET at 77 K . dielectric (0.7 nm EOT) and barrier...measured and modeled split Cg–Vg and G−Vg characteristics of InAs0.8Sb0.2 QW-MOSFET at 77 K and the frequency dispersion characteristics due to the in

Microtropins Q-W, ent-Labdane Glucosides: Microtropiosides G-I, Ursane-Type Triterpene Diglucoside and Flavonol Glycoside from the Leaves of Microtropis japonica.

PubMed

Terazawa, Saori; Uemura, Yuka; Koyama, Yuka; Kawakami, Susumu; Sugimoto, Sachiko; Matsunami, Katsuyoshi; Otsuka, Hideaki; Shinzato, Takakazu; Kawahata, Masatoshi; Yamaguchi, Kentaro

2017-01-01

Microtropins Q-W, (2S,3R)-2-ethyl-2,3-dihydroxybutyrate of various glucosides and glucose, as well as three ent-labdane diterpenoid glucosides, named microtropiosides G, H and I, an ursane-type triterpene diglucoside and a flavonoid glycoside were isolated from the MeOH extract of the leaves of Microtropis japonica. The structure of microtropioside A, also isolated from the branches of M. japonica, was elucidated spectroscopically in a previous experiment and was found to possess a rare seven-membered oxyrane ring. Its structure was confirmed by X-ray crystallographic analysis of its pentaacetate.

Terahertz Optical Gain Based on Intersubband Transitions in Optically-Pumped Semiconductor Quantum Wells: Coherent Pumped-Probe Interactions

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

Terahertz optical gain due to intersubband transitions in optically-pumped semiconductor quantum wells (QW's) is calculated nonperturbatively. We solve the pump- field-induced nonequilibrium distribution function for each subband of the QW system from a set of rate equations that include both intrasubband and intersubband relaxation processes. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. We show that the coherent pump and signal wave interactions contribute significantly to the THz gain. Because of the optical Stark effect and pump-induced population redistribution, optical gain saturation at larger pump intensities is predicted.

Dirac Cellular Automaton from Split-step Quantum Walk

PubMed Central

Mallick, Arindam; Chandrashekar, C. M.

2016-01-01

Simulations of one quantum system by an other has an implication in realization of quantum machine that can imitate any quantum system and solve problems that are not accessible to classical computers. One of the approach to engineer quantum simulations is to discretize the space-time degree of freedom in quantum dynamics and define the quantum cellular automata (QCA), a local unitary update rule on a lattice. Different models of QCA are constructed using set of conditions which are not unique and are not always in implementable configuration on any other system. Dirac Cellular Automata (DCA) is one such model constructed for Dirac Hamiltonian (DH) in free quantum field theory. Here, starting from a split-step discrete-time quantum walk (QW) which is uniquely defined for experimental implementation, we recover the DCA along with all the fine oscillations in position space and bridge the missing connection between DH-DCA-QW. We will present the contribution of the parameters resulting in the fine oscillations on the Zitterbewegung frequency and entanglement. The tuneability of the evolution parameters demonstrated in experimental implementation of QW will establish it as an efficient tool to design quantum simulator and approach quantum field theory from principles of quantum information theory. PMID:27184159

Direct detector for terahertz radiation

DOEpatents

Wanke, Michael C [Albuquerque, NM; Lee, Mark [Albuquerque, NM; Shaner, Eric A [Albuquerque, NM; Allen, S James [Santa Barbara, CA

2008-09-02

A direct detector for terahertz radiation comprises a grating-gated field-effect transistor with one or more quantum wells that provide a two-dimensional electron gas in the channel region. The grating gate can be a split-grating gate having at least one finger that can be individually biased. Biasing an individual finger of the split-grating gate to near pinch-off greatly increases the detector's resonant response magnitude over prior QW FET detectors while maintaining frequency selectivity. The split-grating-gated QW FET shows a tunable resonant plasmon response to FIR radiation that makes possible an electrically sweepable spectrometer-on-a-chip with no moving mechanical optical parts. Further, the narrow spectral response and signal-to-noise are adequate for use of the split-grating-gated QW FET in a passive, multispectral terahertz imaging system. The detector can be operated in a photoconductive or a photovoltaic mode. Other embodiments include uniform front and back gates to independently vary the carrier densities in the channel region, a thinned substrate to increase bolometric responsivity, and a resistive shunt to connect the fingers of the grating gate in parallel and provide a uniform gate-channel voltage along the length of the channel to increase the responsivity and improve the spectral resolution.

Optical transitions in GaNAs quantum wells with variable nitrogen content embedded in AlGaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elborg, M., E-mail: ELBORG.Martin@nims.go.jp; Noda, T.; Mano, T.

2016-06-15

We investigate the optical transitions of GaN{sub x}As{sub 1−x} quantum wells (QWs) embedded in wider band gap AlGaAs. A combination of absorption and emission spectroscopic techniques is employed to systematically investigate the properties of GaNAs QWs with N concentrations ranging from 0 – 3%. From measurement of the photocurrent spectra, we find that besides QW ground state and first excited transition, distinct increases in photocurrent generation are observed. Their origin can be explained by N-induced modifications in the density of states at higher energies above the QW ground state. Photoluminescence experiments reveal that peak position dependence with temperature changes withmore » N concentration. The characteristic S-shaped dependence for low N concentrations of 0.5% changes with increasing N concentration where the low temperature red-shift of the S-shape gradually disappears. This change indicates a gradual transition from impurity picture, where localized N induced energy states are present, to alloying picture, where an impurity-band is formed. In the highest-N sample, photoluminescence emission shows remarkable temperature stability. This phenomenon is explained by the interplay of N-induced energy states and QW confined states.« less

Subcutaneous interferon β-1a in the treatment of clinically isolated syndromes: 3-year and 5-year results of the phase III dosing frequency-blind multicentre REFLEXION study.

PubMed

Comi, Giancarlo; De Stefano, Nicola; Freedman, Mark S; Barkhof, Frederik; Uitdehaag, Bernard M J; de Vos, Marlieke; Marhardt, Kurt; Chen, Liang; Issard, Delphine; Kappos, Ludwig

2017-04-01

Early treatment following a first clinical demyelinating event (FCDE) delays further disease activity in patients with multiple sclerosis (MS). This study determined the effects of early versus delayed treatment (DT) with subcutaneous interferon (sc IFN) β-1a 44 μg in patients with an FCDE up to 60 months postrandomisation. Patients who completed the 24-month double-blind REFLEX (REbif FLEXible dosing in early MS) study entered an extension (REFLEXION, REbif FLEXible dosing in early MS extensION): patients initially randomised to sc IFN β-1a and not reaching clinically definite MS (clinically definite MS, CDMS (second attack or sustained Expanded Disability Status Scale (EDSS) score increase)) continued original treatment (three times weekly (tiw) or once weekly (qw)); placebo patients switched to tiw (DT); patients with CDMS switched to tiw. Clinical, MRI and adverse event data up to month 60 are reported. 402/517 (77.8%) REFLEX patients entered REFLEXION (DT, n=133; tiw, n=127; qw, n=142). At month 60, cumulative probability of CDMS was: DT 44.6%; qw 40.7% (nominal p=0.084 vs DT); tiw 39.2% (nominal p=0.032 vs DT). Cumulative probability of McDonald MS conversion (CDMS or new MRI activity) at month 60 was also reduced for tiw versus DT (nominal p<0.001). At month 60, mean cumulative numbers of new T2, gadolinium-enhancing and T1 hypointense lesions were lower with sc IFN β-1a qw (nominal p<0.05) and tiw versus DT (nominal p<0.001); T2 and T1 hypointense lesion volume change was lower for sc IFN β-1a tiw versus DT (nominal p<0.01). Treatment was well tolerated; fewer patients receiving tiw versus qw were positive for neutralising or binding antibodies. Over 5 years in patients presenting with an FCDE, early sc IFN β-1a tiw administration versus DT prolonged time to CDMS and McDonald MS, and reduced overall MRI activity. NCT00813709; Results. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://www.bmj.com/company/products-services/rights-and-licensing/.

Multi-domain impact of elosufase alfa in Morquio A syndrome in the pivotal phase III trial.

PubMed

Hendriksz, Christian J; Giugliani, Roberto; Harmatz, Paul; Mengel, Eugen; Guffon, Nathalie; Valayannopoulos, Vassili; Parini, Rossella; Hughes, Derralynn; Pastores, Gregory M; Lau, Heather A; Al-Sayed, Moeenaldeen D; Raiman, Julian; Yang, Ke; Mealiffe, Matthew; Haller, Christine

2015-02-01

To report and discuss the multi-domain impact of elosulfase alfa, with focus on tertiary and composite endpoints, in the 24-week, randomized, double-blind, placebo-controlled phase 3 trial in patients with Morquio A syndrome (mucopolysaccharidosis IVA). Patients with Morquio A syndrome aged ≥5 years were randomized 1:1:1 to elosulfase alfa 2.0mg/kg/week (qw; N=58), elosulfase alfa 2.0mg/kg/every other week (qow; N=59), or placebo (N=59) for 24 weeks. Primary and secondary efficacy measures were 6-minute walk test (6MWT; primary), 3-minute stair climb test (3-MSCT) and urinary keratan sulfate (KS). Safety was also evaluated. Tertiary efficacy measures included respiratory function measures, activities of daily living (MPS Health Assessment Questionnaire [MPS-HAQ]), anthropometric, echocardiographic and radiographic measures, hearing and corneal clouding assessment. In order to fully characterize treatment impact in this heterogeneous disorder, the effect of elosulfase alfa on composite efficacy measures was evaluated as well. The study was not designed to have sufficient power for any of the tertiary outcomes. For most tertiary endpoints, subjects treated with the weekly dose of elosulfase alfa improved more than those receiving placebo. The largest treatment effects were seen in maximal voluntary ventilation (MVV), MPS-HAQ, height, and growth rate. The qow group appeared similar to placebo. The analysis of a pre-specified composite endpoint (combining changes from baseline in 6MWT, 3MSCT and MVV z-scores equally weighted) showed a modest positive impact of elosulfase alfa qw versus placebo group (P=0.053). As a pre-specified supportive analysis, the O'Brien Rank Sum composite endpoint (changes from baseline in 6MWT, 3MSC, and MVV), analysis also showed that the qw group performed better than the placebo group (P=0.011). In post-hoc analyses, combinations of other endpoints were also explored using the O'Brien Rank Sum test and showed statistically significant differences between elosulfase alfa qw and placebo favoring elosulfase alfa qw. Differences between elosulfase alfa qow and placebo were not statistically significant. Positive changes were observed in most tertiary variables, demonstrating the efficacy of weekly treatment with elosulfase alfa. Treatment with weekly elosulfase alfa led to improvements across most efficacy measures, resulting in clinically meaningful benefits in a heterogeneous study population. Copyright © 2014. Published by Elsevier Inc.

Self-Tensioning Acoustical Horizontal Line Array (SPRAY) Data Analysis. Final Report of Bearing Stake Tests January thru March 1977, Volume IB. Detailed Description, Test Results

DTIC Science & Technology

1979-01-01

web " AL ***atfa IL X a 42 U 4j ft ut C IC a % % alms j we__w Z A CA 00- ’co 49 a. j -D Lbl ŘV (qw IA. .4L i ) ’IV Lhw . 94 U CD1 ca C. 1 1 .4 I~l...4C E: qw C Zw (1 - - 1U -7 -: - *t -r z~ -: do’.’.. ~ V.(O (11U * III ,~ * SS~ ŗ filU. * zu lc )0( Lid 014- CA__ G -4 0 I ~ IA L4,A t WIx W U V4 soft

Two-color detection with charge sensitive infrared phototransistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Sunmi, E-mail: kimsunmi@iis.u-tokyo.ac.jp; Kajihara, Yusuke; Komiyama, Susumu

2015-11-02

Highly sensitive two-color detection is demonstrated at wavelengths of 9 μm and 14.5 μm by using a charge sensitive infrared phototransistor fabricated in a triple GaAs/AlGaAs quantum well (QW) crystal. Two differently thick QWs (7 nm- and 9 nm-thicknesses) serve as photosensitive floating gates for the respective wavelengths via intersubband excitation: The excitation in the QWs is sensed by a third QW, which works as a conducting source-drain channel in the photosensitive transistor. The two spectral bands of detection are shown to be controlled by front-gate biasing, providing a hint for implementing voltage tunable ultra-highly sensitive detectors.

Performance analysis of GeSn-alloy-based multiple quantum well transistor laser

NASA Astrophysics Data System (ADS)

Ranjan, Ravi; Pareek, Prakash; Anwer Askari, Syed Sadique; Das, Mukul K.

2018-02-01

The Group IV Photonics (GFP) which include an alloy of Si, Ge & Sn that gives a direct bandgap material (GeSn, SiGeSn) in near and mid-IR region used as an active material in photonics devices. The multiple quantum well SiGeSn/GeSn transistor laser structure is considered in this paper and performance parameters are evaluated for the same. The result shows that the threshold base current density (2.6 kA/cm2) for the proposed device initially decreases with increasing number of quantum well (QW) and later on it saturates. The current gain and output photon density of the device decreases and increases respectively, with increasing number of QW.

Intermediate band formation in a δ-doped like QW superlattices of GaAs/AlxGa1-xAs for solar cell design

NASA Astrophysics Data System (ADS)

Del Río-De Santiago, A.; Martínez-Orozco, J. C.; Rodríguez-Magdaleno, K. A.; Contreras-Solorio, D. A.; Rodríguez-Vargas, I.; Ungan, F.

2018-03-01

It is reported a numerical computation of the local density of states for a δ-doped like QW superlattices of AlxGa1-xAs, as a possible heterostructure that, being integrated into a solar cell device design, can provide an intermediate band of allowed states to assist the absorption of photons with lower energies than that of the energy gap of the solar-cell constituent materials. This work was performed using the nearest neighbors sp3s* tight-binding model including spin. The confining potential caused by the ionized donor impurities in δ-doped impurities seeding that was obtained analytically within the lines of the Thomas-Fermi approximation was reproduced here by the Al concentration x variation. This potential is considered as an external perturbation in the tight-binding methodology and it is included in the diagonal terms of the tight-binding Hamiltonian. Special attention is paid to the width of the intermediate band caused by the change in the considered aluminium concentration x, the inter-well distance between δ-doped like QW wells and the number of them in the superlattice. In general we can conclude that this kind of superlattices can be suitable for intermediate band formation for possible intermediate-band solar cell design.

Identification and Expression Analysis of Polygalacturonase Family Members during Peach Fruit Softening.

PubMed

Qian, Ming; Zhang, Yike; Yan, Xiangyan; Han, Mingyu; Li, Jinjin; Li, Fang; Li, Furui; Zhang, Dong; Zhao, Caiping

2016-11-18

Polygalacturonase (PG) is an important hydrolytic enzyme involved in pectin degradation during fruit softening. However, the roles of PG family members in fruit softening remain unclear. We identified 45 PpPG genes in the peach genome which are clustered into six subclasses. PpPGs consist of four to nine exons and three to eight introns, and the exon/intron structure is basically conserved in all but subclass E. Only 16 PpPG genes were expressed in ripening fruit, and their expression profiles were analyzed during storage in two peach cultivars with different softening characteristics. Eight PGs ( PpPG1 , - 10 , - 12 , - 13 , - 15 , - 23 , - 21 , and - 22 ) in fast-softening "Qian Jian Bai" (QJB) fruit and three PGs ( PpPG15 , - 21 , and - 22 ) in slow-softening "Qin Wang" (QW) fruit exhibited softening-associated patterns; which also were affected by ethylene treatment. Our results suggest that the different softening characters in QW and QJB fruit is related to the amount of PG members. While keeping relatively lower levels during QW fruit softening, the expression of six PGs ( PpPG1 , - 10 , - 12 , - 11 , - 14 , and - 35 ) rapidly induced by ethylene. PpPG24 , - 25 and - 38 may not be involved in softening of peach fruit.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour,more » analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.« less

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liaugaudas, Gediminas; Jacopin, Gwénolé; Carlin, Jean-François

2016-05-28

We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temperature dependent PL and time-resolved PL measurements reveal similar trends among the studied SQW samples, which also indicate strong localization effects. The observed PL energy behavior, akin to the S-shape, accompanied first by a narrowing and then a broadening of the PL line width with increasing temperature, closely resemble previous observations made on the more established (In,Ga)N/GaN QW system. The similar trends observedmore » in the PL features of those two QW systems imply that the PL properties of LM GaN/(Al,In)N SQW samples are also governed by localized states. The effects of carrier transfer among these localization sites are clearly observed for the 3 nm thick QW, evidenced by an increasing PL intensity in the lower energy spectral window and a concomitant increase in the corresponding PL decay time. Time-resolved data corroborate the picture of strongly localized carriers and also indicate that above a well thickness dependent delocalization temperature carrier distribution across the localized sites reaches thermal equilibrium, as the PL decay times over different spectral regions converge to the same value. Based on the difference between the calculated QW ground state transition energy, obtained using the envelope wave function formalism, and the measured PL energy, a localization energy of at least a few hundreds of meV has been extracted for all of the studied SQW samples. This rather large value also implies that In-related localization effects are more pronounced in the GaN/(Al,In)N system with respect to those in the (In,Ga)N/GaN one for a similar In content.« less

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Lin'an, E-mail: layang@xidian.edu.cn; Li, Yue; Wang, Ying

Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al{sub 0.15}Ga{sub 0.85}N emitter barrier and a 1.7-nm-thick Al{sub 0.25}Ga{sub 0.75}N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A andmore » 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al{sub 0.2}Ga{sub 0.8}N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In{sub 0.03}Ga{sub 0.97}N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.« less

De novo weekly and biweekly darbepoetin alfa dosing in pediatric patients with chronic kidney disease.

PubMed

Warady, Bradley A; Barcia, John; Benador, Nadine; Jankauskiene, Augustina; Olson, Kurt; Podracka, Ludmila; Shavkin, Aleksey; Srivaths, Poyyapakkam; Wong, Cynthia J; Petersen, Jeffrey

2018-01-01

Darbepoetin alfa is a commonly prescribed erythropoiesis-stimulating agent (ESA) for correcting anemia in pediatric chronic kidney disease (CKD) patients. However, little information exists on its use in ESA-naïve patients. This study evaluated the efficacy and safety of darbepoetin alfa in pediatric patients initiating ESA therapy. One-hundred sixteen pediatric ESA-naïve subjects (aged 1-18 years) with CKD stages 3-5D and hemoglobin (Hb) <10 g/dl from 43 centers in the US, Europe, and Mexico were randomized by age (three groups) and dialysis status (yes vs. no) to receive darbepoetin alfa once weekly (QW) or every 2 weeks (Q2W) subcutaneously (not on dialysis and peritoneal dialysis subjects) and intravenously (hemodialysis subjects). The drug was titrated to achieve Hb levels of 10.0-12.0 g/dl over 25 weeks. Patient- and parent-reported health-related outcomes were measured by the Pediatric Quality of Life Inventory (PedsQL™) in children ≥2 years. In both groups, mean Hb concentrations increased to ≥11.0 g/dl over the first 3 months of treatment and remained stable within the 10.0-12.0 g/dl target range. The median time to achieve hemoglobin ≥10 g/dl was slightly longer for subjects <12 years (QW and Q2W, both 28 days) vs. those ≥12 years (23 and 22 days, respectively). Adverse event profiles were similar between groups, with QW, four (7%) and Q2W, five (9%). PedsQL™ scores showed modest increases. Darbepoetin alfa can be safely administered either QW or Q2W to ESA-naïve pediatric patients with CKD-related anemia to achieve Hb targets of 10.0-12.0 g/dl.

Carrier Dynamics and Application of the Phase Coherent Photorefractive Effect in ZnSe Quantum Wells

NASA Astrophysics Data System (ADS)

Dongol, Amit

The intensity dependent diffraction efficiency of a phase coherent photorefractive (PCP) ZnSe quantum well (QW) is investigated at 80 K in a two-beam four-wave mixing (FWM) configuration using 100 fs laser pulses with a repetition rate of 80 MHz. The observed diffraction efficiencies of the first and second-order diffracted beam are on the order of 10-3 and 10-5, respectively, revealing nearly no intensity dependence. The first-order diffraction is caused by the PCP effect where the probe-pulse is diffracted due to a long-living incoherent electron density grating in the QW. The second-order diffraction is created by a combination of diffraction processes. For negative probe-pulse delay, the exciton polarization is diffracted at the electron grating twice by a cascade effect. For positive delay, the diffracted signal is modified by the destructive interference with a chi(5) generated signal due to a dynamical screening effect. Model calculations of the signal traces based on the optical Bloch equations considering inhomogeneous broadening of exciton energies are in good agreement with the experimental data. To study the carrier dynamics responsible for the occurrence of the PCP effect, threebeam FWM experiments are carried out. The non-collinear wave-vectors k1 , k2 and k3 at central wavelength of 441 nm (~2.81 eV) were resonantly tuned to the heavy-hole exciton transition energy at 20 K. In the FWM experiment the time coincident strong pump pulses k1 and k2 create both an exciton density grating in the QW and an electron-hole pair grating in the GaAs while the delayed weak pulse k3 simultaneously probes the exciton lifetime as well as the electron grating capture time. The model calculations are in good agreement with the experimental results also providing information about the transfer delay of electrons arriving from the substrate to the QW. For negative probe-pulse delay we still observe a diffracted signal due to the long living electron density grating in the QW. The electron grating build-up and decay times are also studied with the modified three-beam FWM set-up. Using an optical shutter for pump pulses k1and k2, the dynamics of the electron grating formation and its decay is continuously probed by a delayed pulse k3. The obtained build-up and decay times are found to depend nearly linearly on the intensity of incident pulses k1 and k2 being on the order of several microseconds at low pump intensities. The PCP effect in ZnSe QW possesses a time-gating capability which can be used for real-time holographic imaging. In this work we demonstrate contrast enhanced real time holographic imaging (CEHI) of floating glass beads and of living unicellular animals (Paramecium and Euglena cells) in aqueous solution. We also demonstrate CEHI of a ~100 im thick wire concealed behind a layer of chicken skin. The results demonstrate the potential of PCP QWs for real-time and depth-resolved imaging of moving micrometer sized biological objects in transparent media or of obscured objects in turbid media.

18-THz-wide optical frequency comb emitted from monolithic passively mode-locked semiconductor quantum-well laser

NASA Astrophysics Data System (ADS)

Lo, Mu-Chieh; Guzmán, Robinson; Ali, Muhsin; Santos, Rui; Augustin, Luc; Carpintero, Guillermo

2017-10-01

We report on an optical frequency comb with 14nm (~1.8 THz) spectral bandwidth at -3 dB level that is generated using a passively mode-locked quantum-well (QW) laser in photonic integrated circuits (PICs) fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase modulators followed by an extra-cavity SOA as booster amplifier. A 1.8-THz-wide optical comb spectrum is presented with ultrafast pulse that is 0.35-ps-wide. The radio frequency beat note has a 3-dB linewidth of 450 kHz and 35-dB SNR.

Linear and nonlinear magneto-optical absorption in a triangular quantum well

NASA Astrophysics Data System (ADS)

Tung, Luong V.; Vinh, Pham T.; Dinh, Le; Phuc, Huynh V.

2018-05-01

In this work, we study the linear and nonlinear magneto-optical absorption spectrum in a triangular quantum well (TrQW) created by the applied electric field via investigating the phonon-assisted cyclotron resonance (PACR) effect. The results are calculated for a specific Ga0.7Al0.3As/GaAs quantum well. The magneto-optical absorption coefficient (MOAC) and the full width at half maximum (FWHM) are found to be significantly dependent on the magnetic field, the electric field and the temperature. Our results showed that the MOAC and FWHM increase with the magnetic, electric fields and temperature. The obtained results also suggest a useful way to control the magneto-optical properties of TrQW by changing these parameters.

Exchange-mediated anisotropy of (ga,mn)as valence-band probed by resonant tunneling spectroscopy.

PubMed

Elsen, M; Jaffrès, H; Mattana, R; Tran, M; George, J-M; Miard, A; Lemaître, A

2007-09-21

We report on experiments and theory of resonant tunneling anisotropic magnetoresistance (TAMR) in AlAs/GaAs/AlAs quantum wells (QW) contacted by a (Ga,Mn)As ferromagnetic electrode. Such resonance effects manifest themselves by bias-dependent oscillations of the TAMR signal correlated to the successive positions of heavy (HH) and light (LH) quantized hole energy levels in GaAs QW. We have modeled the experimental data by calculating the spin-dependent resonant tunneling transmission in the frame of the 6 x 6 valence-band k.p theory. The calculations emphasize the opposite contributions of the (Ga,Mn)As HH and LH subbands near the Gamma point, unraveling the anatomy of the diluted magnetic semiconductor valence band.

Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform

NASA Astrophysics Data System (ADS)

Mączko, H. S.; Kudrawiec, R.; Gladysiewicz, M.

2016-09-01

It is shown that compressively strained Ge1-xSnx/Ge quantum wells (QWs) grown on a Ge substrate with 0.1 ≤ x ≤ 0.2 and width of 8 nm ≤ d ≤ 14 nm are a very promising gain medium for lasers integrated with an Si platform. Such QWs are type-I QWs with a direct bandgap and positive transverse electric mode of material gain, i.e. the modal gain. The electronic band structure near the center of Brillouin zone has been calculated for various Ge1-xSnx/Ge QWs with use of the 8-band kp Hamiltonian. To calculate the material gain for these QWs, occupation of the L valley in Ge barriers has been taken into account. It is clearly shown that this occupation has a lot of influence on the material gain in the QWs with low Sn concentrations (Sn < 15%) and is less important for QWs with larger Sn concentration (Sn > 15%). However, for QWs with Sn > 20% the critical thickness of a GeSn layer deposited on a Ge substrate starts to play an important role. Reduction in the QW width shifts up the ground electron subband in the QW and increases occupation of the L valley in the barriers instead of the Γ valley in the QW region.

Development of Simulated Directional Audio for Cockpit Applications

DTIC Science & Technology

1986-01-01

011 ’rhoodore JT.. (2erth, Jeffrev M.. Enpolivinnn.,Will1am R. and Folds, Deennis J. 12a. T’fP6 OP REPORT I131. TIME QW1COVEREDT’PRPOT(r. oDO 5 AG ON...of the aludio si~nal, in the time and frequency domains, which enhance localization performance with simulated cues. Previous research is reviewed...dichotically. Localization accuracy and response time were compared for: (1) nine different filtered noise stimuli, designed to make available some

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, S. L., E-mail: shuch@ist.hokudai.ac.jp; Takayama, J.; Murayama, A.

Time-resolved optical spin orientation spectroscopy was employed to investigate the temperature-dependent electron spin injection in In{sub 0.1}Ga{sub 0.9}As quantum well (QW) and In{sub 0.5}Ga{sub 0.5}As quantum dots (QDs) tunnel-coupled nanostructures with 4, 6, and 8 nm-thick GaAs barriers. The fast picosecond-ranged spin injection from QW to QD excited states (ES) was observed to speed up with temperature, as induced by pronounced longitudinal-optical (LO)-phonon-involved multiple scattering process, which contributes to a thermally stable and almost fully spin-conserving injection within 5–180 K. The LO-phonon coupling was also found to cause accelerated electron spin relaxation of QD ES at elevated temperature, mainly via hyperfine interactionmore » with random nuclear field.« less

Femtosecond measurements of near-infrared pulse induced mid-infrared transmission modulation of quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Hong; Liu, Sheng; Center for Advanced Studied in Photonics Research

2014-05-26

We temporally resolved the ultrafast mid-infrared transmission modulation of quantum cascade lasers (QCLs) using a near-infrared pump/mid-infrared probe technique at room temperature. Two different femtosecond wavelength pumps were used with photon energy above and below the quantum well (QW) bandgap. The shorter wavelength pump modulates the mid-infrared probe transmission through interband transition assisted mechanisms, resulting in a high transmission modulation depth and several nanoseconds recovery lifetime. In contrast, pumping with a photon energy below the QW bandgap induces a smaller transmission modulation depth but much faster (several picoseconds) recovery lifetime, attributed to intersubband transition assisted mechanisms. The latter ultrafast modulationmore » (>60 GHz) could provide a potential way to realize fast QCL based free space optical communication.« less

Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

NASA Astrophysics Data System (ADS)

Xiang, Li; Degang, Zhao; Desheng, Jiang; Ping, Chen; Zongshun, Liu; Jianjun, Zhu; Ming, Shi; Danmei, Zhao; Wei, Liu

2016-01-01

Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes (SCH LDs) has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well (QW), an AlGaAs interlayer with a smaller Al component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the AlGaAs interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency. Project supported by the National Natural Science Foundation of China (Nos. 61377020, 61376089, 61223005, 61176126) and the National Science Fund for Distinguished Young Scholars (No. 60925017).

Interplay of Collective Excitations in Quantum Well Intersubband Resonances

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Ning, C. Z.

2003-01-01

Intersubband resonances in a semiconductor quantum well (QW) display some of the most fascinating features involving various collective excitations such as Fermi-edge singularity (FES) and intersubband plasmon (ISP). Using a density matrix approach, we treated many-body effects such as depolarization, vertex correction, and self-energy consistently for a two-subband system. We found a systematic change in resonance spectra from FES-dominated to ISP-dominated features, as QW- width or electron density is varied. Such an interplay between FES and ISP significantly changes both line shape and peak position of the absorption spectrum. In particular, we found that a cancellation of FES and ISP undresses the resonant responses and recovers the single-particle features of absorption for semiconductors with a strong nonparabolicity such as InAs, leading to a dramatic broadening of the absorption spectrum.

The extreme Kuiper Belt binary 2001 QW322.

PubMed

Petit, J-M; Kavelaars, J J; Gladman, B J; Margot, J L; Nicholson, P D; Jones, R L; Parker, J Wm; Ashby, M L N; Bagatin, A Campo; Benavidez, P; Coffey, J; Rousselot, P; Mousis, O; Taylor, P A

2008-10-17

The study of binary Kuiper Belt objects helps to probe the dynamic conditions present during planet formation in the solar system. We report on the mutual-orbit determination of 2001 QW322, a Kuiper Belt binary with a very large separation whose properties challenge binary-formation and -evolution theories. Six years of tracking indicate that the binary's mutual-orbit period is approximately 25 to 30 years, that the orbit pole is retrograde and inclined 50 degrees to 62 degrees from the ecliptic plane, and, most surprisingly, that the mutual orbital eccentricity is <0.4. The semimajor axis of 105,000 to 135,000 kilometers is 10 times that of other near-equal-mass binaries. Because this weakly bound binary is prone to orbital disruption by interlopers, its lifetime in its present state is probably less than 1 billion years.

Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

NASA Astrophysics Data System (ADS)

Yuzeeva, N. A.; Sorokoumova, A. V.; Lunin, R. A.; Oveshnikov, L. N.; Galiev, G. B.; Klimov, E. A.; Lavruchin, D. V.; Kulbachinskii, V. A.

2016-12-01

InxGa_{1-{x}}As/InyAl_{1-{y}}As HEMT structures {δ}-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov-de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard's law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.

Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naquin, Clint; Lee, Mark; Edwards, Hal

2014-11-24

Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (V{sub G}). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures >200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on V{sub G} that reduces drain-source current through the QW. These devices establish the feasibility ofmore » exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.« less

Inclusion of Indium, with doping in the barriers of InxGa1-xN/InyGa1-yN quantum wells reveals striking modifications of the emission properties with current for better operation of LEDs

NASA Astrophysics Data System (ADS)

Gorai, Anup; Mistry, Apu; Panda, Siddhartha; Biswas, Dipankar

2018-02-01

Although that the continuous tunability of InGaN/GaN QW LEDs, carries the promise of a significant impact in optoelectronics, the reduction of the square of the overlap of electron and hole wave functions (Meh2) in InGaN/GaN QW LEDs, under certain conditions, is a sizable problem, difficult to overcome. Theoretical investigations have been carried out on the incorporation of Indium (In) in the GaN barrier layers, with an aim of increasing the overlap of electron and hole wave functions. Rigorous studies through the self consistent solution of Schrödinger and Poison equations expose some new and striking results. With suitable doping, the inclusion of In in the barriers can increase Meh2 to more than two times that of a conventional InGaN/GaN QW LED. In in the barrier along with doping may be suitably utilized to tailor the transition energy and Meh2 with current density, as desired. The transition energy and the Meh2 may be made to have a positive or a negative slope with current density or they may be made fairly constant. This paper will outline the theoretical details, computational methodologies, the parameters used, and the striking new results with suitable depictions and discussions. These new information ought to be interesting for current optoelectronics.

Study of extending carrier lifetime in ZnTe quantum dots coupled with ZnCdSe quantum well

NASA Astrophysics Data System (ADS)

Fan, W. C.; Chou, W. C.; Lee, J. D.; Lee, Ling; Phu, Nguyen Dang; Hoang, Luc Huy

2018-03-01

We demonstrated the growth of a self-assembled type-II ZnTe/ZnSe quantum dot (QD) structure coupled with a type-I Zn0.88Cd0.12Se/ZnSe quantum well (QW) on the (001) GaAs substrate by molecular beam epitaxy (MBE). As the spacer thickness is less than 2 nm, the carrier lifetime increasing from 20 ns to nearly 200 ns was successfully achieved. By utilizing the time-resolved photoluminescence (TRPL) and PL with different excitation power, we identify the PL emission from the coupled QDs consisting of two recombination mechanisms. One is the recombination between electrons in ZnSe barrier and holes confined within ZnTe QDs, and the other is between electrons confined in Zn0.88Cd0.12Se QW and holes confined within ZnTe QDs. According to the band diagram and power-dependent PL, both of the two recombinations reveal the type-II transition. In addition, the second recombination mechanism dominates the whole carrier recombination as the spacer thickness is less than 2 nm. A significant extension of carrier lifetime by increasing the electron and hole separation is illustrated in a type-II ZnTe/ZnSe QD structure coupling with a type-I ZnCdSe/ZnSe QW. Current sample structure could be used to increase the quantum efficient of solar cell based on the II-VI compound semiconductors.

Development and Demonstration of Manufacturing Processes for Fabricating Graphite/LARC 160 Polyimide Structural Elements.

DTIC Science & Technology

1981-12-01

microporous mem - brane over the preform bleeder surface and secure in place, wrinkle-free, with pressure sensitive tape on the backside of the mandrel...0 ,1 - a)Q w ( w0O0 aO)W Q)W~ toIt o m 04 0r 0 0 - -0 - -. ’ F0 E-tO 000 F00 H0 OHp oi0 -o 0 0 H *H H H -A P to HH HZ *H HHP o~ 0I 4- m H 044 u It

Intersubband absorption of p-type wurtzite GaN/AlN quantum well for fiber-optics telecommunication

NASA Astrophysics Data System (ADS)

Park, Seoung-Hwan; Ahn, Doyeol; Park, Chan-Yong

2017-11-01

The intersubband transition of wurtzite (WZ) p-type GaN/AlN quantum well (QW) structures grown on GaN substrate was investigated theoretically using the multiband effective-mass theory. The peak value of the TE-polarization absorption spectrum is found to be similar to that of the TM-polarization absorption spectrum. The absorption coefficients for TE- and TM-polarizations are mainly attributed to the absorption from the ground state (m1 = 1) because holes are mainly confined in ground states near the band-edge in an investigated range of the carrier density. We observe that a transition wavelength of 1.55 μm can be obtained for the QW structure with a relatively thin (˜16 Å) well width. Thus, we expect that a p-type WZ AlN/GaN heterostructure is applicable for a photodetector application for fiber-optic communications with normal incidence of wave.

Transport electron through a quantum wire by side-attached asymmetric quantum-dot rings

NASA Astrophysics Data System (ADS)

Rostami, A.; Zabihi, S.; Rasooli S., H.; Seyyedi, S. K.

2011-12-01

The electronic conductance at zero temperature through a quantum wire with side-attached asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting Anderson tunneling Hamiltonian method. We show that the asymmetric configuration of QD- scatter system strongly impresses the amplitude and spectrum of quantum wire nanostructure transmission characteristics. It is shown that whenever the balanced number of quantum dots in two rings is substituted by unbalanced scheme, the number of forbidden mini-bands in quantum wire conductance increases and QW-nanostructure electronic conductance contains rich spectral properties due to appearance of the new anti-resonance and resonance points in spectrum. Considering the suitable gap between nano-rings can strengthen the amplitude of new resonant peaks in the QW conductance spectrum. The proposed asymmetric quantum ring scatter system idea in this paper opens a new insight on designing quantum wire nano structure for given electronic conductance.

Onset of the Efficiency Droop in GaInN Quantum Well Light-Emitting Diodes under Photoluminescence and Electroluminescence Excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Guan-Bo; Schubert, E. Fred; Cho, Jaehee

2015-08-19

The efficiency of Ga0.87In0.13N/GaN single and multiple quantum well (QW) light-emitting diodes is investigated under photoluminescence (PL) and electroluminescence (EL) excitation. By measuring the laser spot area (knife-edge method) and the absorbance of the GaInN QW (transmittance/reflectance measurements), the PL excitation density can be converted to an equivalent EL excitation density. The EL efficiency droop-onset occurs at an excitation density of 2.08 × 1026 cm–3 s–1 (J = 10 A/cm2), whereas no PL efficiency droop is found for excitation densities as high as 3.11 × 1027 cm–3 s–1 (J = 149 A/cm2). Considering Shockley–Read–Hall, radiative, and Auger recombination and includingmore » carrier leakage shows that the EL efficiency droop is consistent with a reduction of injection efficiency.« less

Statistical moments of quantum-walk dynamics reveal topological quantum transitions.

PubMed

Cardano, Filippo; Maffei, Maria; Massa, Francesco; Piccirillo, Bruno; de Lisio, Corrado; De Filippis, Giulio; Cataudella, Vittorio; Santamato, Enrico; Marrucci, Lorenzo

2016-04-22

Many phenomena in solid-state physics can be understood in terms of their topological properties. Recently, controlled protocols of quantum walk (QW) are proving to be effective simulators of such phenomena. Here we report the realization of a photonic QW showing both the trivial and the non-trivial topologies associated with chiral symmetry in one-dimensional (1D) periodic systems. We find that the probability distribution moments of the walker position after many steps can be used as direct indicators of the topological quantum transition: while varying a control parameter that defines the system phase, these moments exhibit a slope discontinuity at the transition point. Numerical simulations strongly support the conjecture that these features are general of 1D topological systems. Extending this approach to higher dimensions, different topological classes, and other typologies of quantum phases may offer general instruments for investigating and experimentally detecting quantum transitions in such complex systems.

Statistical moments of quantum-walk dynamics reveal topological quantum transitions

PubMed Central

Cardano, Filippo; Maffei, Maria; Massa, Francesco; Piccirillo, Bruno; de Lisio, Corrado; De Filippis, Giulio; Cataudella, Vittorio; Santamato, Enrico; Marrucci, Lorenzo

2016-01-01

Many phenomena in solid-state physics can be understood in terms of their topological properties. Recently, controlled protocols of quantum walk (QW) are proving to be effective simulators of such phenomena. Here we report the realization of a photonic QW showing both the trivial and the non-trivial topologies associated with chiral symmetry in one-dimensional (1D) periodic systems. We find that the probability distribution moments of the walker position after many steps can be used as direct indicators of the topological quantum transition: while varying a control parameter that defines the system phase, these moments exhibit a slope discontinuity at the transition point. Numerical simulations strongly support the conjecture that these features are general of 1D topological systems. Extending this approach to higher dimensions, different topological classes, and other typologies of quantum phases may offer general instruments for investigating and experimentally detecting quantum transitions in such complex systems. PMID:27102945

Magnetospectroscopy of double HgTe/CdHgTe quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bovkun, L. S.; Krishtopenko, S. S.; Ikonnikov, A. V., E-mail: antikon@ipmras.ru

2016-11-15

The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in symmetric QWs with a rectangular potential profile are calculated based on the Kane 8 × 8 model. The presence of a tunnel-transparent barrier is shown to lead to the splitting of states and “doubling” of the main magnetoabsorption lines. At a QW width close to the critical one the presence of band inversion and the emergence of a gapless band structure, similar to bilayer graphene, are shown for a structure with a single QW. The shift of magnetoabsorption linesmore » as the carrier concentration changes due to the persistent photoconductivity effect associated with a change in the potential profile because of trap charge exchange is detected. This opens up the possibility for controlling topological phase transitions in such structures.« less

Real time visualization of quantum walk

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyazaki, Akihide; Hamada, Shinji; Sekino, Hideo

2014-02-20

Time evolution of quantum particles like electrons is described by time-dependent Schrödinger equation (TDSE). The TDSE is regarded as the diffusion equation of electrons with imaginary diffusion coefficients. And the TDSE is solved by quantum walk (QW) which is regarded as a quantum version of a classical random walk. The diffusion equation is solved in discretized space/time as in the case of classical random walk with additional unitary transformation of internal degree of freedom typical for quantum particles. We call the QW for solution of the TDSE a Schrödinger walk (SW). For observation of one quantum particle evolution under amore » given potential in atto-second scale, we attempt a successive computation and visualization of the SW. Using Pure Data programming, we observe the correct behavior of a probability distribution under the given potential in real time for observers of atto-second scale.« less

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, J.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.

2015-02-07

The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) with different thicknesses of low temperature grown GaN cap layers are investigated. It is found that the MQW emission energy red-shifts and the peak intensity decreases with increasing GaN cap layer thickness, which may be partly caused by increased floating indium atoms accumulated at quantum well (QW) surface. They will result in the increased interface roughness, higher defect density, and even lead to a thermal degradation of QW layers. An extra growth interruption introduced before the growth of GaN cap layer can help with evaporating the floating indium atoms, andmore » therefore is an effective method to improve the optical properties of high indium content InGaN/GaN MQWs.« less

Relationship between microstructure and optical properties of a novel perovskite C12PbI4 embedded in matrix of porous alumina

NASA Astrophysics Data System (ADS)

Zaghdoudi, W.; Bardaoui, A.; Khalifa, N.; Chtourou, R.

2013-01-01

In this study, organic-inorganic hybrid perovskite multiple quantum wells (PbI QWs) embedded in porous anodic alumina (PAA) thin films on glass and aluminum substrates are investigated in detail. The pore height and diameter of the nanoscale structure of porous anodic alumina (PAA) film produced by the anodization technique are controllable. The synthesized films are characterized morphologically using the atomic force microscopy (AFM). Scanning electron microscopy (SEM) study showed granular surface. The structural and optical properties were investigated by X-ray diffraction (XRD), photoluminescence (PL) and UV-Vis-NIR spectrophotometer. The effect of the two different substrates on the impregnation of the PbI QW in the PAA is presented. Both PL and AFM studies show a better penetration of the PbI QW in the case of the Al substrate providing a wider pore diameter. Remarkable enhancement of quantum confinement is demonstrated.

Phase Recovery Acceleration of Quantum-Dot Semiconductor Optical Amplifiers by Optical Pumping to Quantum-Well Wetting Layer

NASA Astrophysics Data System (ADS)

Kim, Jungho

2013-11-01

We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.

A Self-Aligned InGaAs Quantum-Well Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

NASA Astrophysics Data System (ADS)

Lin, Jianqiang; Kim, Tae-Woo; Antoniadis, Dimitri A.; del Alamo, Jesús A.

2012-06-01

We present a novel n-type InGaAs quantum-well metal-oxide-semiconductor field-effect transistor (QW-MOSFET) fabricated by a self-aligned gate-last process and investigate relevant Si-like manufacturing issues in future III-V MOSFETs. The device structure features a composite InP/Al2O3 gate barrier with a capacitance equivalent thickness (CET) of 3 nm and non alloyed Mo ohmic contacts. We have found that RIE introduces significant damage to the intrinsic device resulting in poor current drive and subthreshold swing. The effect is largely removed through a thermal annealing step. Thermally annealed QW-MOSFETs exhibit a subthreshold swing of 95 mV/dec, indicative of excellent interfacial characteristics. The peak mobility of the MOSFET is 2780 cm2 V-1 s-1.

Effect of exenatide QW or placebo, both added to titrated insulin glargine, in uncontrolled type 2 diabetes: The DURATION-7 randomized study.

PubMed

Guja, Cristian; Frías, Juan P; Somogyi, Aniko; Jabbour, Serge; Wang, Hui; Hardy, Elise; Rosenstock, Julio

2018-02-23

To compare the efficacy and safety of adding the glucagon-like peptide-1 receptor agonist exenatide once weekly (QW) 2 mg or placebo among patients with type 2 diabetes who were inadequately controlled despite titrated insulin glargine (IG) ± metformin. This multicentre, double-blind study (ClinicalTrials.gov identifier: NCT02229383) randomized (1:1) patients with persistent hyperglycaemia after an 8-week titration phase (glycated haemoglobin [HbA1c] 7.0%-10.5% [53-91 mmol/mol]) to exenatide QW or placebo. The primary endpoint was HbA1c change from baseline to week 28. Secondary endpoints included body weight, 2-hour postprandial glucose, and mean daily IG dose. Of 464 randomized patients (mean: age, 58 years; HbA1c, 8.5% [69 mmol/mol]; diabetes duration, 11.3 years), 91% completed 28 weeks. Exenatide QW + IG vs placebo + IG significantly reduced HbA1c (least-squares mean difference, -0.73% [-8.0 mmol/mol]; 95% confidence interval, -0.93%, -0.53% [-10.2, -5.8 mmol/mol]; P < .001; final HbA1c, 7.55% [59 mmol/mol] and 8.24% [67 mmol/mol], respectively); body weight (-1.50 kg; -2.17, -0.84; P < .001); and 2-hour postprandial glucose (-1.52 mmol/L [-27.5 mg/dL]; -2.15, -0.90 [-38.7, -16.2]; P < .001). Significantly more exenatide QW + IG-treated patients vs placebo + IG-treated patients reached HbA1c <7.0% (<53 mmol/mol) (32.5% vs 7.4%; P < .001); daily IG dose increased by 2 and 4 units, respectively. Gastrointestinal and injection-site adverse events were more frequent with exenatide QW + IG (15.1% and 7.8%, respectively) than with placebo + IG (10.8% and 3.0%, respectively); hypoglycaemia incidence was similar between the exenatide QW + IG (29.7%) and placebo + IG (29.0%) groups, with no major hypoglycaemic events. Among patients with inadequate glycaemic control, exenatide QW significantly improved glucose control and decreased body weight, without increased hypoglycaemia or unexpected safety findings. © 2018 The Authors. Diabetes, Obesity and Metabolism published by John Wiley & Sons Ltd.

Optical gain tuning within IR region in type-II In0.5Ga0.5As0.8P0.2/GaAs0.5Sb0.5 nano-scale heterostructure under external uniaxial strain

NASA Astrophysics Data System (ADS)

Singh, A. K.; Rathi, Amit; Riyaj, Md.; Bhardwaj, Garima; Alvi, P. A.

2017-11-01

Quaternary and ternary alloy semiconductors offer an extra degree of flexibility in terms of bandgap tuning. Modifications in the wave functions and alterations in optical transitions in quaternary and ternary QW (quantum well) heterostructures due to external uniaxial strain provide valuable insights on the characteristics of the heterostructure. This paper reports the optical gain in strained InGaAsP/GaAsSb type-II QW heterostructure (well width = 20 Å) under external uniaxial strain at room temperature (300 K). The entire heterostructure is supposed to be grown on InP substrate pseudomorphically. Band structure, wave functions, energy dispersion and momentum matrix elements of the heterostructure have been computed. 6 × 6 diagonalised k → ·p → Hamiltonian matrix of the system is evaluated and Luttinger-Kohn model has been applied for the band structure and wavefunction calculations. TE mode optical gain spectrum in the QW-heterostructure under uniaxial strain along [110] is calculated. Optical gain of the heterostructure as a function of 2D carrier density and temperature variation is investigated. The variation of the peak optical gain as a function of As and Sb fractions in InGaAsP as a barrier and GaAsSb as a well respectively is exhibited. For a charge carrier injection of 5 ×1012 /cm2 , the TE optical gain is 3952 cm-1 at room temperature under no external uniaxial strain. Significant increase in TE mode optical gain is observed under high external uniaxial strain (1, 5 and 10 GPa) along [110] within IR (Infrared region) region.

Long-term management of type 2 diabetes with glucagon-like peptide-1 receptor agonists.

PubMed

Courtney, Hamish; Nayar, Rahul; Rajeswaran, Chinnadorai; Jandhyala, Ravi

2017-01-01

Continuously reducing excess blood glucose is a primary goal for the management of type 2 diabetes (T2D). Most patients with T2D require glucose-lowering medications to achieve and maintain adequate glycemic control; however, treatment failure may occur, limiting treatment options. Glucagon-like peptide-1 receptor agonists (GLP-1RAs) are an emerging therapeutic class that can be prescribed for patients instead of basal insulin after the failure of oral therapies. Recent studies have focused on the durability and tolerability of long-term GLP-1RA therapy. This review summarizes the key efficacy and safety findings from prospective phase 3 clinical studies of at least 76 weeks' duration for the GLP-1RAs currently approved in the United States and the European Union (albiglutide, dulaglutide, exenatide twice daily [BID], exenatide once weekly [QW], liraglutide, and lixisenatide). Currently, most of the long-term data are from uncontrolled extension studies, and continuous patient benefit has been observed for up to 3 years with multiple GLP-1RAs. Four-year comparative data demonstrated a longer time to treatment failure for exenatide BID than for sulfonylurea, and 3-year comparative extension data demonstrated greater glycated hemoglobin (HbA1c) reductions and weight loss with exenatide QW than with insulin glargine. Currently, the longest extension study for a GLP-1RA is the DURATION-1 study of exenatide QW, with >7 years of clinical data available. Data from DURATION-1 demonstrated that continuous HbA1c reductions and weight loss were observed for the patients continuing on the treatment, with no unexpected adverse events. Taken together, these data support GLP-1RAs as a long-term noninsulin treatment option after the failure of oral therapies.

Luttinger liquid behavior in low-dimensional systems

NASA Astrophysics Data System (ADS)

Sandler, Nancy Patricia

The purpose of this thesis is the study of different low-dimensional systems displaying the physical properties of Luttinger liquids (LL). In recent years, the LL model has been successfully applied to understand the transport properties, and recently noise measurements, of low-dimensional electronic systems. In this thesis, I focus on quantum wires (QW) and two-dimensional systems exhibiting the fractional quantum Hall effect (FQHE) as two different examples of systems showing Luttinger liquid behavior. In the case of QW, I analyze the effect of the dimensionality crossover on the finite temperature conductance in weakly disordered quantum wires. I show that although the quasi-one-dimensional QW exhibits a typical Luttinger liquid behavior for a small number of channels in the wire, the well-established Fermi liquid picture sets in when the number of channels increases. As another example of LL behavior, I study junctions between fractional quantum Hall (FQH) systems with different filling fractions. These junctions display a rich and interesting array of new physics. For example, I show that, by analyzing the scattering processes at the junction site, processes analogous to Andreev reflection present in superconductor/normal metal junctions are also present in the FQH junctions. I also analyze the noise spectrum of FQH junctions, and show that the scale of the noise spectrum is determined by the conductance of the junction. Furthermore, I discuss the implications of these results on the interpretation of recent experiments in terms of quasiparticles with fractional charge. Finally, I introduce the concept of generalized noise Wilson ratios as universal quotients between noise amplitudes in the thermal and shot noise regimes and discuss their experimental consequences.

U.S. Department of Energy Reference Model Program RM1: Experimental Results.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hill, Craig; Neary, Vincent Sinclair; Gunawan, Budi

The Reference Model Project (RMP), sponsored by the U.S. Department of Energy’s (DOE) Wind and Water Power Technologies Program within the Office of Energy Efficiency & Renewable Energy (EERE), aims at expediting industry growth and efficiency by providing nonproprietary Reference Models (RM) of MHK technology designs as study objects for opensource research and development (Neary et al. 2014a,b). As part of this program, MHK turbine models were tested in a large open channel facility at the University of Minnesota’s St. Anthony Falls Laboratory (UMN-SAFL). Reference Model 1 (RM1) is a 1:40 geometric scale dual-rotor axial flow horizontal axis device withmore » counter-rotating rotors, each with a rotor diameter dT = 0.5m. Precise blade angular position and torque measurements were synchronized with three acoustic Doppler velocimeters (ADVs) aligned with each rotor and the midpoint for RM1. Flow conditions for each case were controlled such that depth, h = 1m, and volumetric flow rate, Qw = 2.425m3s-1, resulting in a hub height velocity of approximately Uhub = 1.05ms-1 and blade chord length Reynolds numbers of Rec ≈ 3.0x105. Vertical velocity profiles collected in the wake of each device from 1 to 10 rotor diameters are used to estimate the velocity recovery and turbulent characteristics in the wake, as well as the interaction of the counter-rotating rotor wakes. The development of this high resolution laboratory investigation provides a robust dataset that enables assessing turbulence performance models and their ability to accurately predict device performance metrics, including computational fluid dynamics (CFD) models that can be used to predict turbulent inflow environments, reproduce wake velocity deficit, recovery and higher order turbulent statistics, as well as device performance metrics.« less

Self-rolling and light-trapping in flexible quantum well–embedded nanomembranes for wide-angle infrared photodetectors

PubMed Central

Wang, Han; Zhen, Honglou; Li, Shilong; Jing, Youliang; Huang, Gaoshan; Mei, Yongfeng; Lu, Wei

2016-01-01

Three-dimensional (3D) design and manufacturing enable flexible nanomembranes to deliver unique properties and applications in flexible electronics, photovoltaics, and photonics. We demonstrate that a quantum well (QW)–embedded nanomembrane in a rolled-up geometry facilitates a 3D QW infrared photodetector (QWIP) device with enhanced responsivity and detectivity. Circular geometry of nanomembrane rolls provides the light coupling route; thus, there are no external light coupling structures, which are normally necessary for QWIPs. This 3D QWIP device under tube-based light-trapping mode presents broadband enhancement of coupling efficiency and omnidirectional detection under a wide incident angle (±70°), offering a unique solution to high-performance focal plane array. The winding number of these rolled-up QWIPs provides well-tunable blackbody photocurrents and responsivity. 3D self-assembly of functional nanomembranes offers a new path for high conversion efficiency between light and electricity in photodetectors, solar cells, and light-emitting diodes. PMID:27536723

Design of Al-rich AlGaN quantum well structures for efficient UV emitters

NASA Astrophysics Data System (ADS)

Funato, Mitsuru; Ichikawa, Shuhei; Kumamoto, Kyosuke; Kawakami, Yoichi

2017-02-01

The effects of the structure design of AlGaN-based quantum wells (QWs) on the optical properties are discussed. We demonstrate that to achieve efficient emission in the germicidal wavelength range (250 - 280 nm), AlxGa1-xN QWs in an AlyGa1-yN matrix (x < y) is quite effective, compared with those in an AlN matrix: Time-resolved photoluminescence and cathodoluminescence spectroscopies show that the AlyGa1-yN matrix can enhance the radiative recombination process and can prevent misfit dislocations, which act as non-radiative recombination centers, from being induced in the QW interface. As a result, the emission intensity at room temperature is about 2.7 times larger for the AlxGa1-xN QW in the AlyGa1-yN matrix than that in the AlN matrix. We also point out that further reduction of point defects is crucial to achieve an even higher emission efficiency.

Strain relaxation in convex-graded InxAl1-xAs (x = 0.05-0.79) metamorphic buffer layers grown by molecular beam epitaxy on GaAs(001)

NASA Astrophysics Data System (ADS)

Solov'ev, V. A.; Chernov, M. Yu; Baidakova, M. V.; Kirilenko, D. A.; Yagovkina, M. A.; Sitnikova, A. A.; Komissarova, T. A.; Kop'ev, P. S.; Ivanov, S. V.

2018-01-01

This paper presents a study of structural properties of InGaAs/InAlAs quantum well (QW) heterostructures with convex-graded InxAl1-xAs (x = 0.05-0.79) metamorphic buffer layers (MBLs) grown by molecular beam epitaxy on GaAs substrates. Mechanisms of elastic strain relaxation in the convex-graded MBLs were studied by the X-ray reciprocal space mapping combined with the data of spatially-resolved selected area electron diffraction implemented in a transmission electron microscope. The strain relaxation degree was approximated for the structures with different values of an In step-back. Strong contribution of the strain relaxation via lattice tilt in addition to the formation of the misfit dislocations has been observed for the convex-graded InAlAs MBL, which results in a reduced threading dislocation density in the QW region as compared to a linear-graded MBL.

Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells

NASA Astrophysics Data System (ADS)

Hierro, Adrian; Montes Bajo, Miguel; Tamayo-Arriola, Julen; Hugues, Maxime; Ulloa, J. M.; Le Biavan, N.; Peretti, Romain; Julien, François; Faist, Jerome; Chauveau, Jean-Michel

2018-02-01

In this work we show the potential of the ZnO/ZnMgO material system for intersubband (ISB)-based devices. This family of alloys presents a unique set of properties that makes it highly attractive for THz emission as well as strong coupling regimes: it has a very large longitudinal optical phonon energy of 72 meV, it can be doped up to 1021 cm-3, it is very ionic with a large difference between the static and high frequency dielectric constants, and it can be grown homoepitaxially on native substrates with low defect densities. The films analyzed here are grown by molecular beam epitaxy (MBE) on a non-polar orientation, the m-plane, with varying QW thicknesses and 30% Mg concentrations in the barrier, and are examined with polarization-dependent IR absorption spectroscopy. The QW band structure and the intersubband transitions energies are modeled considering many body effects, which are key to predict correctly the measured values.

Characterization of background carriers in InAs/GaSb quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Junbin; Wu, Xiaoguang; Wang, Guowei

2016-03-07

The origin of the background carriers in an undoped InAs/GaSb quantum well (QW) at temperatures between 40 K and 300 K has been investigated using conventional Hall measurements. It is found that the Hall coefficient changes its sign at around 200 K, indicating that both electrons and holes exist in the quantum well. The two-carrier Hall model is thus adopted to analyze the Hall data, which enables the temperature dependence of the carrier density to be obtained. It is found that considerable numbers of holes exist under low temperature conditions (<40 K) in the InAs/GaSb QW, and the hole density is one to twomore » orders higher than that of the electrons within the experimental temperature range. The origin of these low temperature holes and the temperature-dependent behavior of the carrier density over the entire experimental temperature range are then discussed.« less

Charge carrier localization effects on the quantum efficiency and operating temperature range of InAs{sub x}P{sub 1−x}/InP quantum well detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vashisht, Geetanjali, E-mail: geetanjali@rrcat.gov.in; Dixit, V. K., E-mail: dixit@rrcat.gov.in; Porwal, S.

2016-03-07

The effect of charge carrier localization resulting in “S-shaped” temperature dependence of the photoluminescence peak energy of InAs{sub x}P{sub 1−x}/InP quantum wells (QWs) is distinctly revealed by the temperature dependent surface photo voltage (SPV) and photoconductivity (PC) processes. It is observed that the escape efficiency of carriers from QWs depends on the localization energy, where the carriers are unable to contribute in SPV/PC signal below a critical temperature. Below the critical temperature, carriers are strongly trapped in the localized states and are therefore unable to escape from the QW. Further, the critical temperature increases with the magnitude of localization energymore » of carriers. Carrier localization thus plays a pivotal role in defining the operating temperature range of InAs{sub x}P{sub 1−x}/InP QW detectors.« less

Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

NASA Astrophysics Data System (ADS)

Wang, Juan; Wang, Guo-Wei; Xu, Ying-Qiang; Xing, Jun-Liang; Xiang, Wei; Tang, Bao; Zhu, Yan; Ren, Zheng-Wei; He, Zhen-Hong; Niu, Zhi-Chuan

2013-07-01

InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al0.75Ga0.25Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and Al0.75Ga0.25Sb buffer were optimized. Al0.75Ga0.25Sb is better than AlSb as a buffer layer as indicated. The sample with optimal Al0.75Ga0.25Sb buffer layer shows a smooth surface morphology with root-mean-square roughness of 6.67 Å. The electron mobility has reached as high as 27 000 cm2/Vs with a sheet density of 4.54 × 1011/cm2 at room temperature.

Strain dependence of In incorporation in m-oriented GaInN/GaN multi quantum well structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horenburg, Philipp, E-mail: p.horenburg@tu-braunschweig.de; Buß, Ernst Ronald; Rossow, Uwe

We demonstrate a strong dependence of the indium incorporation efficiency on the strain state in m-oriented GaInN/GaN multi quantum well (MQW) structures. Insertion of a partially relaxed AlInN buffer layer opens up the opportunity to manipulate the strain situation in the MQW grown on top. By lattice-matching this AlInN layer to the c- or a-axis of the underlying GaN, relaxation towards larger a- or smaller c-lattice constants can be induced, respectively. This results in a modified template for the subsequent MQW growth. From X-ray diffraction and photoluminescence measurements, we derive significant effects on the In incorporation efficiency and In concentrationsmore » in the quantum well (QW) up to x = 38% without additional accumulation of strain energy in the QW region. This makes strain manipulation a very promising method for growth of high In-containing MQW structures for efficient, long wavelength light-emitting devices.« less

Effect of pumping delay on the modulation bandwidth in double tunneling-injection quantum dot lasers.

PubMed

Asryan, Levon V

2017-01-01

The modulation bandwidth of double tunneling-injection (DTI) quantum dot (QD) lasers is studied, taking into account noninstantaneous pumping of QDs. In this advanced type of semiconductor lasers, carriers are first captured from the bulk waveguide region into two-dimensional regions (quantum wells [QWs]); then they tunnel from the QWs into zero-dimensional regions (QDs). The two processes are noninstantaneous and, thus, could delay the delivery of the carriers to the QDs. Here, the modulation bandwidth of DTI QD lasers is calculated as a function of two characteristic times (the capture time from the waveguide region into the QW and the tunneling time from the QW into the QD ensemble) and is shown to increase as either of these times is reduced. The capture and tunneling times of 1 and 0.1 ps, respectively, are shown to characterize fast capture and tunneling processes; as the capture and tunneling times are brought below 1 and 0.1 ps, the bandwidth remains almost unchanged and close to its upper limit.

Many-Body Effects on Bandgap Shrinkage, Effective Masses, and Alpha Factor

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Ning, C. Z.; Woo, Alex C. (Technical Monitor)

2000-01-01

Many-body Coulomb effects influence the operation of quantum-well (QW) laser diode (LD) strongly. In the present work, we study a two-band electron-hole plasma (EHP) within the Hatree-Fock approximation and the single plasmon pole approximation for static screening. Full inclusion of momentum dependence in the many-body effects is considered. An empirical expression for carrier density dependence of the bandgap renormalization (BGR) in an 8 nm GaAs/Al(0.3)G(4.7)As single QW will be given, which demonstrates a non-universal scaling behavior for quasi-two-dimension structures, due to size-dependent efficiency of screening. In addition, effective mass renormalization (EMR) due to momentum-dependent self-energy many-body correction, for both electrons and holes is studied and serves as another manifestation of the many-body effects. Finally, the effects on carrier density dependence of the alpha factor is evaluated to assess the sensitivity of the full inclusion of momentum dependence.

Development of a Computer Model for Scattering of Electromagnetic Waves by a Turbulent Wake

DTIC Science & Technology

1976-10-01

01. W WO V m PiM NNN 0 0P o NI’ggo*.Ne~~~ 40 .INWN 4 I-.oAg , i- £ oc..eec a, *e ggg0eg.c e C30c O Ooa. Coo e r.g..00000mo.. k w 30 N on. N M...0 y 6 . N -.1, -0𔃺 64 6404 i 09000 aI ~III IL. W I 4 0 0, 1W0 I 0~ I 4 S- qw~ ____________’ .9 us, 4K C*I: 4W 0 fo # l C w 6 0o m. Ott ilfl,,0 0

Cyclotron resonance and interband optical transitions in HgTe/CdTe(0 1 3) quantum well heterostructures

NASA Astrophysics Data System (ADS)

Ikonnikov, A. V.; Zholudev, M. S.; Spirin, K. E.; Lastovkin, A. A.; Maremyanin, K. V.; Aleshkin, V. Ya; Gavrilenko, V. I.; Drachenko, O.; Helm, M.; Wosnitza, J.; Goiran, M.; Mikhailov, N. N.; Dvoretskii, S. A.; Teppe, F.; Diakonova, N.; Consejo, C.; Chenaud, B.; Knap, W.

2011-12-01

Cyclotron resonance spectra of 2D electrons in HgTe/CdxHg1-xTe (0 1 3) quantum well (QW) heterostructures with inverted band structure have been thoroughly studied in quasiclassical magnetic fields versus the electron concentration varied using the persistent photoconductivity effect. The cyclotron mass is shown to increase with QW width in contrast to QWs with normal band structure. The measured values of cyclotron mass are shown to be systematically less than those calculated using the 8 × 8 Kane model with conventional set of HgTe and CdTe material parameters. In quantizing pulsed magnetic fields (Landau level filling factor less than unity) up to 45 T, both intraband (CR) and interband magnetoabsorption have been studied at radiation wavelengths 14.8 and 11.4 µm for the first time. The results obtained are compared with the allowed transition energies between Landau levels in the valence and conduction bands calculated within the same model, the calculated energies being again systematically less (by 3-14%) than the observed optical transition energies.

Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing

NASA Astrophysics Data System (ADS)

Kim, Honghyuk; Guan, Yingxin; Babcock, Susan E.; Kuech, Thomas F.; Mawst, Luke J.

2018-03-01

Laser diodes employing a strain-compensated GaAs1-xBix/GaAs1-yPy single quantum well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High resolution x-ray diffraction, room temperature photoluminescence, and real-time optical reflectance measurements during the OMVPE growth were used to find the optimum process window for the growth of the active region material. Systematic post-growth in situ thermal anneals of various lengths were carried out in order to investigate the impacts of thermal annealing on the laser device performance characteristics. While the lowest threshold current density was achieved after the thermal annealing for 30 min at 630 °C, a gradual decrease in the external differential quantum efficiency was observed as the annealing time increases. It was observed that the temperature sensitivities of the threshold current density increase while those of lasing wavelength and slope efficiency remain nearly constant with increasing annealing time. Z-contrast scanning transmission electron microscopic) analysis revealed inhomogeneous Bi distribution within the QW active region.

Aggregation-induced emission in lamellar solids of colloidal perovskite quantum wells

PubMed Central

Jagielski, Jakub; Kumar, Sudhir; Wang, Mingchao; Scullion, Declan; Lawrence, Robert; Li, Yen-Ting; Yakunin, Sergii; Tian, Tian; Kovalenko, Maksym V.; Chiu, Yu-Cheng; Santos, Elton J. G.; Lin, Shangchao; Shih, Chih-Jen

2017-01-01

The outstanding excitonic properties, including photoluminescence quantum yield (ηPL), of individual, quantum-confined semiconductor nanoparticles are often significantly quenched upon aggregation, representing the main obstacle toward scalable photonic devices. We report aggregation-induced emission phenomena in lamellar solids containing layer-controlled colloidal quantum wells (QWs) of hybrid organic-inorganic lead bromide perovskites, resulting in anomalously high solid-state ηPL of up to 94%. Upon forming the QW solids, we observe an inverse correlation between exciton lifetime and ηPL, distinct from that in typical quantum dot solid systems. Our multiscale theoretical analysis reveals that, in a lamellar solid, the collective motion of the surface organic cations is more restricted to orient along the [100] direction, thereby inducing a more direct bandgap that facilitates radiative recombination. Using the QW solids, we demonstrate ultrapure green emission by completely downconverting a blue gallium nitride light-emitting diode at room temperature, with a luminous efficacy higher than 90 lumen W−1 at 5000 cd m−2, which has never been reached in any nanomaterial assemblies by far. PMID:29282451

Resonant tunneling diodes as energy-selective contacts used in hot-carrier solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takeda, Yasuhiko, E-mail: takeda@mosk.tytlabs.co.jp; Sugimoto, Noriaki; Ichiki, Akihisa

2015-09-28

Among the four features unique to hot-carrier solar cells (HC-SCs): (i) carrier thermalization time and (ii) carrier equilibration time in the absorber, (iii) energy-selection width and (iv) conductance of the energy-selective contacts (ESCs), requisites of (i)-(iii) for high conversion efficiency have been clarified. We have tackled the remaining issues related to (iv) in the present study. The detailed balance model of HC-SC operation has been improved to involve a finite value of the ESC conductance to find the required values, which in turn has been revealed to be feasible using resonant tunneling diodes (RTDs) consisting of semiconductor quantum dots (QDs)more » and quantum wells (QWs) by means of a formulation to calculate the conductance of the QD- and QW-RTDs derived using the rigorous solutions of the effective-mass Hamiltonians. Thus, all of the four requisites unique to HC-SCs to achieve high conversion efficiency have been elucidated, and the two requisites related to the ESCs can be fulfilled using the QD- and QW-RTDs.« less

Terahertz response in the quantum-Hall-effect regime of a quantum-well-based charge-sensitive infrared phototransistor

NASA Astrophysics Data System (ADS)

Nakagawa, Daisuke; Takizawa, Kazuhiro; Ikushima, Kenji; Kim, Sunmi; Patrashin, Mikhail; Hosako, Iwao; Komiyama, Susumu

2018-04-01

The characteristics of a charge-sensitive infrared phototransistor (CSIP) based on a GaAs/AlGaAs multiple quantum-well (QW) structure are studied under a magnetic field. In the CSIP, the upper QWs serve as a floating gate that is charged by photoexcitation. The photoinduced charges are detected using the resistance of the lowest QW conducting channel. The conducting channel exhibits the integer quantum Hall effect (QHE) in a perpendicular high magnetic field, yielding the magnetic field dependence of the terahertz (THz) response ΔR. We found two different features of ΔR. One is that ΔR switches sign across the QHE plateau, which is explained simply by an increased electron density in the conducting channel. The other feature is observed as an enhanced positive ΔR when a potential barrier is formed in the conducting channel. The latter mechanism can be interpreted as the promotion of edge/bulk scattering due to photoinduced charges. These findings suggest ways to enhance the THz response by using magnetic fields and potential barriers.

Possibility for precise Weinberg-angle measurement in centrosymmetric crystals with axis

NASA Astrophysics Data System (ADS)

Mukhamedjanov, T. N.; Sushkov, O. P.

2006-03-01

We demonstrate that parity-nonconserving interaction due to the nuclear weak charge QW leads to a nonlinear magnetoelectric effect in centrosymmetric paramagnetic crystals. It is shown that the effect exists only in crystals with special symmetry axis k . Kinematically, the correlation (correction to energy) has the form HPNC∝QWE•[B×k](B•k) , where B and E are external magnetic and electric fields. This gives rise to the magnetic induction MPNC∝QW{k(B•[k×E])+[k×E](B•k)} . To be specific, we consider rare-earth-metal trifluorides and, in particular, dysprosium trifluoride which looks the most suitable for experiment. We estimate the optimal temperature for the experiment to be of a few kelvin. For the magnetic field B=1T and the electric field E=10kV/cm , the expected magnetic induction is 4πMPNC˜0.5×10-11G , six orders of magnitude larger than the best sensitivity currently under discussion. Dysprosium has several stable isotopes, and so comparison of the effects for different isotopes provides the possibility for precise measurement of the Weinberg angle.

Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

NASA Astrophysics Data System (ADS)

Su, Y. K.; Chen, W. C.; Wan, C. T.; Yu, H. C.; Chuang, R. W.; Tsai, M. C.; Cheng, K. Y.; Hu, C.; Tsau, Seth

2008-07-01

In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In 0.39Ga 0.61As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm 2. To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm 2. The fitted characteristic temperature ( T0) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In 0.42Ga 0.58As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.

Radiative decay rate of excitons in square quantum wells: Microscopic modeling and experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khramtsov, E. S.; Grigoryev, P. S.; Ignatiev, I. V.

The binding energy and the corresponding wave function of excitons in GaAs-based finite square quantum wells (QWs) are calculated by the direct numerical solution of the three-dimensional Schrödinger equation. The precise results for the lowest exciton state are obtained by the Hamiltonian discretization using the high-order finite-difference scheme. The microscopic calculations are compared with the results obtained by the standard variational approach. The exciton binding energies found by two methods coincide within 0.1 meV for the wide range of QW widths. The radiative decay rate is calculated for QWs of various widths using the exciton wave functions obtained by direct andmore » variational methods. The radiative decay rates are confronted with the experimental data measured for high-quality GaAs/AlGaAs and InGaAs/GaAs QW heterostructures grown by molecular beam epitaxy. The calculated and measured values are in good agreement, though slight differences with earlier calculations of the radiative decay rate are observed.« less

Spin Decoherence in III-V Quantum Wells and Superlattices

NASA Astrophysics Data System (ADS)

Lau, Wayne H.; Flatté, Michael E.

2001-03-01

Electron spin decoherence in zincblende type quantum wells (QW) and superlattices (SL) near room temperature is dominated by the precessional D'yakonov-Perel' (DP) mechanism. The effective precession is a direct result of the spin splitting of the conduction band due to bulk inversion asymmetry (BIA) of the constituent zincblende semiconductors and also to any native interface asymmetry (NIA) of the heterointerfaces. The effect of BIA is dominant in common atom (CA) systems such as GaAs/AlGaAs QWs. However, in no common atom (NCA) systems such as InAs/GaSb, the interface bonds are different in character from those in the bulk and are asymmetrically oriented (giving rise to NIA). To accurately describe the DP spin relaxation mechanism we employ a nonperturbative nanostructure model based on a fourteen-bulk-band basis, including both BIA and NIA. Quantitative agreement between these calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb QW's, as well as for an InAs/GaSb SL.

Intersubband spectroscopy of ZnO/ZnMgO quantum wells grown on m-plane ZnO substrates for quantum cascade device applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Quach, Patrick; Jollivet, Arnaud; Isac, Nathalie; Bousseksou, Adel; Ariel, Frédéric; Tchernycheva, Maria; Julien, François H.; Montes Bajo, Miguel; Tamayo-Arriola, Julen; Hierro, Adrián.; Le Biavan, Nolwenn; Hugues, Maxime; Chauveau, Jean-Michel

2017-03-01

Quantum cascade (QC) lasers opens new prospects for powerful sources operating at THz frequencies. Up to now the best THz QC lasers are based on intersubband emission in GaAs/AlGaAs quantum well (QW) heterostructures. The maximum operating temperature is 200 K, which is too low for wide-spread applications. This is due to the rather low LO-phonon energy (36 meV) of GaAs-based materials. Indeed, thermal activation allows non-radiative path through electron-phonon interaction which destroys the population inversion. Wide band gap materials such as ZnO have been predicted to provide much higher operating temperatures because of the high value of their LO-phonon energy. However, despite some observations of intersubband absorption in c-plane ZnO/ZnMgO quantum wells, little is known on the fundamental parameters such as the conduction band offset in such heterostructures. In addition the internal field inherent to c-plane grown heterostuctures is an handicap for the design of QC lasers and detectors. In this talk, we will review a systematic investigation of ZnO/ZnMgO QW heterostructures with various Mg content and QW thicknesses grown by plasma molecular beam epitaxy on low-defect m-plane ZnO substrates. We will show that most samples exhibit TM-polarized intersubband absorption at room temperature linked either to bound-to-quasi bound inter-miniband absorption or to bound-to bound intersubband absorption depending on the Mg content of the barrier material. This systematic study allows for the first time to estimate the conduction band offset of ZnO/ZnMgO heterostructures, opening prospects for the design of QC devices operating at THz frequencies. This was supported by the European Union's Horizon 2020 research and innovation programme under grant agreement #665107.

TAK-228 (formerly MLN0128), an investigational oral dual TORC1/2 inhibitor: A phase I dose escalation study in patients with relapsed or refractory multiple myeloma, non-Hodgkin lymphoma, or Waldenström's macroglobulinemia.

PubMed

Ghobrial, Irene M; Siegel, David S; Vij, Ravi; Berdeja, Jesus G; Richardson, Paul G; Neuwirth, Rachel; Patel, Chirag G; Zohren, Fabian; Wolf, Jeffrey L

2016-06-01

The PI3K/AKT/mTOR signaling pathways are frequently dysregulated in multiple human cancers, including multiple myeloma (MM), non-Hodgkin lymphoma (NHL), and Waldenström's macroglobulinemia (WM). This was the first clinical study to evaluate the safety, tolerability, maximal-tolerated dose (MTD), dose-limiting toxicity (DLT), pharmacokinetics, and preliminary clinical activity of TAK-228, an oral TORC1/2 inhibitor, in patients with MM, NHL, or WM. Thirty-nine patients received TAK-228 once daily (QD) at 2, 4, 6, or 7 mg, or QD for 3 days on and 4 days off each week (QDx3d QW) at 9 or 12 mg, in 28-day cycles. The overall median age was 61.0 years (range 46-85); 31 patients had MM, four NHL, and four WM. Cycle 1 DLTs occurred in five QD patients (stomatitis, urticaria, blood creatinine elevation, fatigue, and nausea and vomiting) and four QDx3d QW patients (erythematous rash, fatigue, asthenia, mucosal inflammation, and thrombocytopenia). The MTDs were determined to be 4 mg QD and 9 mg QDx3d QW. Thirty-six patients (92%) reported at least one drug-related toxicity; the most common grade ≥3 drug-related toxicities were thrombocytopenia (15%), fatigue (10%), and neutropenia (5%). TAK-228 exhibited a dose-dependent increase in plasma exposure and no appreciable accumulation with repeat dosing; mean plasma elimination half-life was 6-8 hr. Of the 33 response-evaluable patients, one MM patient had a minimal response, one WM patient achieved partial response, one WM patient had a minor response, and 18 patients (14 MM, two NHL, and two WM) had stable disease. These findings encourage further studies including combination strategies. © 2016 Wiley Periodicals, Inc.

Dupilumab with concomitant topical corticosteroid treatment in adults with atopic dermatitis with an inadequate response or intolerance to ciclosporin A or when this treatment is medically inadvisable: a placebo-controlled, randomized phase III clinical trial (LIBERTY AD CAFÉ).

PubMed

de Bruin-Weller, M; Thaçi, D; Smith, C H; Reich, K; Cork, M J; Radin, A; Zhang, Q; Akinlade, B; Gadkari, A; Eckert, L; Hultsch, T; Chen, Z; Pirozzi, G; Graham, N M H; Shumel, B

2018-05-01

Atopic dermatitis is a chronic inflammatory skin disease that may require systemic therapy. Ciclosporin A (CsA) is a widely used, potent immunosuppressant but it is not effective in all patients with atopic dermatitis, and side-effects limit its use. Dupilumab, a fully human anti-interleukin 4 receptor-alpha monoclonal antibody, inhibits signaling of IL-4 and IL-13, key drivers of Type 2/Th2-mediated inflammation, and is approved in the U.S.A. and the European Union for the treatment of inadequately-controlled moderate-to-severe atopic dermatitis in adults. To evaluate efficacy and safety of dupilumab with concomitant topical corticosteroids (TCS) in adults with atopic dermatitis with inadequate response to/intolerance of CsA, or for whom CsA treatment was medically inadvisable. In this 16-week, double-blind, randomized, placebo-controlled, phase III trial, patients were randomized 1 : 1 : 1 to subcutaneous dupilumab 300 mg weekly (qw) or every 2 weeks (q2w) or placebo. All received concomitant medium-potency TCS from Week -2 through Week 16; dosage could be tapered if lesions cleared, or stopped for adverse reactions to TCS. In total, 390 patients were screened, 325 were randomized, and 318 completed the trial. Treatment groups had similar baseline characteristics. Significantly more patients in the dupilumab qw + TCS and q2w + TCS groups achieved ≥ 75% improvement from baseline in the Eczema Area and Severity Index at Week 16 vs. the placebo + TCS group (primary end point) (59·1% and 62·6% vs. 29·6%, respectively; P < 0·001 vs. placebo + TCS, both doses). Other clinical outcomes and atopic dermatitis symptoms were significantly improved in the dupilumab qw + TCS and q2w + TCS groups, including pruritus, pain, sleep disturbance, symptoms of anxiety and depression, and quality of life (QoL). Treatment groups had similar overall rates of adverse events (qw + TCS, q2w + TCS and placebo + TCS groups: 69·1%, 72·0% and 69·4%, respectively) and serious adverse events (1·8%, 1·9% and 1·9%, respectively). Conjunctivitis was more frequent with dupilumab + TCS; skin infections were more frequent with placebo + TCS. Dupilumab + TCS significantly improved signs and symptoms of atopic dermatitis and QoL in adults with a history of inadequate response to/intolerance of CsA, or for whom CsA treatment was medically inadvisable. No new safety signals were identified. © 2017 The Authors. British Journal of Dermatology published by John Wiley & Sons Ltd on behalf of British Association of Dermatologists.

SPM characterization of next generation solar cells under light irradiation: Optoelectronic study from nano to macroscopic scale.

PubMed

Ishida, Nobuyuki; Fujita, Daisuke

2014-11-01

Solar cells (SCs) that contain elaborate nanostructures, such as quantum dots and quantum wells, have been rigorously investigated as a way to harvest a wide range of the solar spectrum [1]. However, the energy conversion efficiency of those SCs still remains low. For the further improvement of the device performance, a much deeper understanding of the role of nanostructures in the photovoltaic conversion process is essential to gain the effective design criteria. To achieve this, local electronic properties including electrical potential, energy states, and charge distribution around the excitation centers have to be characterized under light irradiation since they govern the behavior of excited carriers. These properties have so far been indirectly deduced from macroscopic characterization such as current-voltage (I-V) measurement; however, it is not sufficient to clarify rather complicated roles of the nanostructures [2]. Thus, a direct measurement of those properties with high spatial resolution is required to understand the detailed mechanisms of the photovoltaic conversion process. To this end, we have been developing a platform for performing scanning tunneling microscopy/spectroscopy (STM/STS), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM) working under light irradiation conditions.Here, we outline the characterization of a multiple quantum well (QW) SC based on III-V compounds that is expected to be a potential candidate of intermediate band type SC. First, we show the electrical potential measurements along the p-i-n junction of the SC using KPFM in air. Measurements were performed in open and short circuit configurations under light irradiation conditions [Fig.1]. We demonstrate that the dependence of the open circuit voltage on the intensity of light can be successfully measured by careful interpretation of the KPFM data. Second, we introduce some examples of the atomic scale characterization of the multiple QW using ultrahigh vacuum STM including the atomic arrangement, electronic states, and band profile. Also, charge accumulation at the QW is discussed based on the topographic measurement under light irradiation.jmicro;63/suppl_1/i12/DFU042F1F1DFU042F1Fig. 1.(a) Schematic illustration of measurement system of KPFM in air. (b) Effect of light irradiation on potential profile in open circuit configuration. © The Author 2014. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Ge-cap quantum-well bulk FinFET for 5 nm node CMOS integration

NASA Astrophysics Data System (ADS)

Dwi Kurniawan, Erry; Peng, Kang-Hui; Yang, Shang-Yi; Yang, Yi-Yun; Thirunavukkarasu, Vasanthan; Lin, Yu-Hsien; Wu, Yung-Chun

2018-04-01

We propose the use of Ge-cap quantum-well (QW) bulk FinFET for 5 nm CMOS integration, which is a Si channel wrapped with Ge around three sides of the fin channel. The simulation results show that the Ge-cap FinFET structure demonstrates better performance than pure Si, pure Ge, and Si-cap FinFET structures. By optimizing Si fin width and Ge-cap thickness, the on-state current of nFET and pFET can also be symmetric without changing the total fin width (F Wp = F Wn). The electrons in Ge-cap nFinFET concentrate in the Si channel because of QWs formed in the lowest conduction band of the Ge and Si heterostructure, while the holes in Ge-cap pFinFET prefer to stay in Ge surfaces owing to QWs formed in the Ge valence band. The physics studies of this device have made the design rules relevant for the application of the CMOS inverter and static random access memory (SRAM) application technology.

A BRITE view on δ Scuti and γ Doradus stars

NASA Astrophysics Data System (ADS)

Zwintz, K.

2017-09-01

BRITE-Constellation has obtained data for a few δ; Scuti and γ Doradus type stars. A short overview of the pulsational content found in five stars - β Cassiopeiae, ɛ Cephei, M Velorum, β Pictoris and QW Puppis - is given and the potential of BRITE-Constellation observations of δ Scuti and γ Doradus pulsators is discussed.

Industrial integration of high coherence tunable VECSEL in the NIR and MIR

NASA Astrophysics Data System (ADS)

Denet, Stéphane; Chomet, Baptiste; Lecocq, Vincent; Ferrières, Laurence; Myara, Mikhaël.; Cerutti, Laurent; Sagnes, Isabelle; Garnache, Arnaud

2016-03-01

Laser technology is finding applications in areas such as high resolution spectroscopy, radar-lidar, velocimetry, or atomic clock where highly coherent tunable high power light sources are required. The Vertical External Cavity Surface Emitting Laser (VECSEL) technology [1] has been identified for years as a good candidate to reach high power, high coherence and broad tunability while covering a wide emission wavelength range exploiting III-V semiconductor technologies. Offering such performances in the Near- and Middle-IR range, GaAs- and Sb-based VECSEL technologies seem to be a well suited path to meet the required specifications of demanding applications. Built up in this field, our expertise allows the realization of compact and low power consumption marketable products, with performances that do not exist on the market today in the 0.8- 1.1 μm and 2-2.5 μm spectral range. Here we demonstrate highly coherent broadly tunable single frequency micro-chip, intracavity element free, patented VECSEL technology, integrated into a compact module with driving electronics. VECSEL devices emitting in the Near and Middle-IR developed in the frame of this work [2] exhibit exciting features compared to diode-pumped solid-state lasers and DFB diode lasers; they combine high power (>100mW) high coherence with a low divergence diffraction limited TEM00 beam, class A dynamics with Relative Intensity Noise as low as -140dB/Hz and at shot noise level above 200MHz RF frequency (up to 160GHz), free running narrow linewidth at sub MHz level (fundamental limit at Hz level) with high spectral purity (SMSR >55dB), linear polarization (50dB suppression ratio), and broadband continuous tunability greater than 400GHz (< 30V piezo voltage, 6kHz cut off frequency) with total tunability up to 3THz. Those performances can all be reached thanks to the high finesse cavity of VECSEL technology, associated to ideal homogeneous QW gain behaviour [3]. In addition, the compact design without any movable intracavity elements offers a robust single frequency regime with a long term wavelength stability better than few GHz/h (ambient thermal drift limited). Those devices surpass the state of the art commercial technologies thanks to a combination of power-coherence wavelength tunability performances and integration.

A phase 1 study evaluating the combination of an allosteric AKT inhibitor (MK-2206) and trastuzumab in patients with HER2-positive solid tumors.

PubMed

Hudis, Clifford; Swanton, Charles; Janjigian, Yelena Y; Lee, Ray; Sutherland, Stephanie; Lehman, Robert; Chandarlapaty, Sarat; Hamilton, Nicola; Gajria, Devika; Knowles, James; Shah, Jigna; Shannon, Keith; Tetteh, Ernestina; Sullivan, Daniel M; Moreno, Carolina; Yan, Li; Han, Hyo Sook

2013-11-19

Trastuzumab is effective in human epidermal growth factor receptor 2 (HER2)-over-expressing breast and gastric cancers. However, patients may develop resistance through downstream signaling via the phosphatidylinositol 3-kinase (PI3K)/AKT pathway. This phase 1 trial was conducted to determine the safety and tolerability of the investigational AKT inhibitor MK-2206, to prepare for future studies to determine whether the combination with trastuzumab could inhibit compensatory signaling. Patients with HER2+ treatment-refractory breast and gastroesophageal cancer were enrolled. Treatment consisted of standard doses of intravenous trastuzumab and escalating dose levels of oral MK-2206 using either an every-other-day (45 mg and 60 mg QOD) or once-weekly (135 mg and 200 mg QW) schedule. A total of 34 patients with HER2+ disease were enrolled; 31 received study-drug. The maximum tolerated dose (MTD) for MK-2206 in combination with trastuzumab was 60 mg for the QOD schedule and 135 mg for the QW schedule, although a true MTD was not established due to early termination of the trial. The most common treatment-emergent toxicities included fatigue, hyperglycemia, and dermatologic rash, consistent with prior experience; one death unrelated to treatment was reported. There was one complete response in a patient with metastatic breast cancer, one patient achieved a partial response, and 5 patients had stable disease for at least 4 months, despite progression on multiple prior trastuzumab- and lapatinib-based therapies. Results also indicate that trastuzumab does not affect the pharmacokinetics of MK-2206. Results suggest the AKT inhibitor MK-2206 can be safely combined with trastuzumab, and is associated with clinical activity, supporting further investigation. ClinicalTrials.gov; identifier: NCT00963547.

Finding of No Significant Impact: SLC-4 to SLC-6 Replacement Waterline Vandenberg Air Force Base, California

DTIC Science & Technology

2004-07-28

width of the API will n&nQW to 16 meters and thi~ encompasses the entire IU’ea be~ Coast Rd and the·Union Pacific right-of-wa:r boundary as defined in...Salvia mellifera Black sage * * Salvia spathacea Hummingbird sage * Sambucchus mexicana Mexican elderbern· * * Scrophularia atrata 2.3A Black

Polarization of III-nitride blue and ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Shakya, J.; Knabe, K.; Kim, K. H.; Li, J.; Lin, J. Y.; Jiang, H. X.

2005-02-01

Polarization-resolved electroluminescence studies of III-nitride blue and ultraviolet (UV) light-emitting diodes (LEDs) were performed. The LEDs were fabricated on nitride materials grown by metalorganic chemical vapor deposition on sapphire substrates (0001). Transverse electric (TE) polarization dominates in the InGaN/GaN quantum-well (QW) blue LEDs (λ'=458nm), whereas transverse magnetic (TM) polarization is dominant in the AlInGaN QW UV LEDs (λ=333nm). For the case of edge emission in blue LEDs, a ratio (r=I⊥/I ‖) of about 1.8:1 was observed between the EL intensities with polarization E ⊥c (TE mode) and E ‖c (TM mode), which corresponds to a degree of polarization ˜0.29. The UV LEDs exhibit a ratio r of about 1:2.3, corresponding to a degree of polarization ˜0.4. This is due to the fact that the degree of polarization of the bandedge emission of the AlxInyGa1-x -yN active layer changes with Al concentration. The low emission efficiency of nitride UV LEDs is partly related to this polarization property. Possible consequences and ways to enhance UV emitter performances related to this unique polarization property are discussed.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well.

PubMed

Baranowski, M; Kudrawiec, R; Latkowska, M; Syperek, M; Misiewicz, J; Sarmiento, T; Harris, J S

2013-02-13

In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not only from (i) the improvement of the optical quality of the GaInNAsSb material (i.e., removal of point defects, which are the source of nonradiative recombination) but it is also affected by (ii) the improvement of carrier collection by the QW region. The total PL efficiency is the product of these two factors, for which the optimal annealing temperatures are found to be ~700 °C and ~760 °C, respectively, whereas the optimal annealing temperature for the integrated PL intensity is found to be between the two temperatures and equals ~720 °C. We connect the variation of the carrier collection efficiency with the modification of the band bending conditions in the investigated structure due to the Fermi level shift in the GaInNAsSb layer after annealing.

The effects of temperature on optical properties of InGaN/GaN multiple quantum well light-emitting diodes

NASA Astrophysics Data System (ADS)

Li, Yi; Zhu, Youhua; Huang, Jing; Deng, Honghai; Wang, Meiyu; Yin, HaiHong

2017-02-01

The effects of temperature on the optical properties of InGaN/GaN quantum well (QW) light-emitting diodes have been investigated by using the six-by-six K-P method taking into account the temperature dependence of band gaps, lattice constants, and elastic constants. The numerical results indicate that the increase of temperature leads to the decrease of the spontaneous emission rate at the same injection current density due to the redistribution of carrier density and the increase of the non-radiative recombination rate. The product of Fermi-Dirac distribution functions of electron fc n and hole ( 1 - fv U m ) for the transitions between the three lowest conduction subbands (c1-c3) and the top six valence subbands (v1-v6) is larger at the lower temperature, which indicates that there are more electron-hole pairs distributed on the energy levels. It should be noted that the optical matrix elements of the inter-band transitions slightly increase at the higher temperature. In addition, the internal quantum efficiency of the InGaN/GaN QW structure is evidently decreased with increasing temperature.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bagraev, N. T., E-mail: bagraev@mail.ioffe.ru; Grigoryev, V. Yu.; Klyachkin, L. E.

The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport. The aforesaid also promotes the creation of composite bosons and fermions by the capture of single magnetic flux quanta at the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. As a certain version noted above, we present the first findings of the high temperature de Haas–van Alphenmore » (300 K) and quantum Hall (77 K) effects in the silicon sandwich structure that represents the ultranarrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface. These data appear to result from the low density of single holes that are of small effective mass in the edge channels of p-type Si-QW because of the impurity confinement by the stripes consisting of the negative-U dipole boron centers which seems to give rise to the efficiency reduction of the electron–electron interaction.« less

Photoemission intensity oscillations from quantum-well states in the Ag/V(100) overlayer system

NASA Astrophysics Data System (ADS)

Milun, M.; Pervan, P.; Gumhalter, B.; Woodruff, D. P.

1999-02-01

Extensive measurements have been made of the photoemission intensities recorded along the surface normal from quantum-well (QW) states of pseudomorphic Ag layers on V(100) in thicknesses from 1-7 ML as a function of photon energy in the range 15-45 eV. In all cases the QW states lead to intense peaks in the photoemission spectra which show strong oscillations in intensity with photon energy, the energy period of the oscillations becoming shorter as the films become thicker. These effects are explained in terms of interference of surface and interfaces photoemission from the sharp changes in potential at the well boundaries, and a semiquantitative description is achieved via calculations based on a simple asymmetric square-well description in the Adawi formulation of surface photoemission. An alternative picture in which intensity peaks are predicted to correspond to the conditions for direct transitions from bulk states of the overlayer material at the same initial-state energy is shown to be in direct contradiction with some of our observations. The reason for this failure, and the relationship of alternative views of the physical processes, are discussed.

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

NASA Astrophysics Data System (ADS)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Izyumskaya, N.; Monavarian, M.; Zhang, F.; Okur, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2014-09-01

Optical properties of GaN/Al0.2Ga0.8N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 1012 cm-2 and a radiative recombination time of τloc = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers.

Properties of a CdZnO/ZnO multiple quantum-well light-emitting diode

NASA Astrophysics Data System (ADS)

Liu, Zhan-Hui; Zhang, Li-Li; Li, Qing-Fang; Zhang, Rong; Xie, Zi-Li; Xiu, Xiang-Qian; Liu, Bin

2016-10-01

A CdZnO/ZnO multiple quantum-well light-emitting diode (LED) structure was successfully grown by using plasma-assisted molecular beam epitaxy on a p-GaN template that had been grown by using metal-organic chemical-vapor deposition on a c-sapphire substrate. The properties of the sample were characterized by using high-resolution X-ray diffraction, transmission electron microscopy, and temperature-dependent photoluminescence measurements. The light output performance of the CdZnO/ZnO QW LED device was also investigated in detail by using I-V and electroluminescence spectral measurements. The characterization showed that our CdZnO/ZnO QW LED structure had good crystalline quality and weaker carrier localization. Owing to the heterojunction structure, the I-V curve indicated that the LED device had a higher turn-on voltage and series resistance. The EL measurement demonstrated that for our LED device's optoelectronic characteristic, the carrier-screening effect played the dominant role in the emission-energy blue-shift mechanism, and the broadening of the emission energy width was mainly ascribed to the band-filling effect. Without a special heat sinking, the L-I curve exhibited slight efficiency droop after 30 mA.

Polarization characteristics of semipolar (112̄2) InGaN/GaN quantum well structures grown on relaxed InGaN buffer layers and comparison with experiment.

PubMed

Park, Seoung-Hwan; Mishra, Dhaneshwar; Eugene Pak, Y; Kang, K; Park, Chang Yong; Yoo, Seung-Hyun; Cho, Yong-Hee; Shim, Mun-Bo; Kim, Sungjin

2014-06-16

Partial strain relaxation effects on polarization ratio of semipolar (112̄2) InxGa1−xN/GaN quantum well (QW) structures grown on relaxed InGaN buffers were investigated using the multiband effective-mass theory. The absolute value of the polarization ratio gradually decreases with increasing In composition in InGaN buffer layer when the strain relaxation ratio (ε0y′y′−εy′y′)/ε0y′y′ along y′-axis is assumed to be linearly proportional to the difference of lattice constants between the well and the buffer layer. Also, it changes its sign for the QW structure grown on InGaN buffer layer with a relatively larger In composition (x > 0.07). These results are in good agreement with the experiment. This can be explained by the fact that, with increasing In composition in the InGaN subsrate, the spontaneous emission rate for the y′-polarization gradually increases while that for x′-polarization decreases due to the decrease in a matrix element at the band-edge (k‖ = 0).

Effect of temperature and magnetic field on disorder in semiconductor structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agrinskaya, N. V., E-mail: nina.agrins@mail.ioffe.ru; Kozub, V. I.

We present the results of consistent theoretical analysis of various factors that may lead to influence of temperature and external magnetic field on disorder in semiconductor structures. Main attention is paid to quantum well (QW) structures in which only QWs or both QW and barriers are doped (the doping level is assumed to be close to the value corresponding to the metal–insulator transition). The above factors include (i) ionization of localized states to the region of delocalized states above the mobility edge, which is presumed to exist in the impurity band; (ii) the coexistence in the upper and lower Hubbardmore » bands (upon doping of QWs as well as barriers); in this case, in particular, the external magnetic field determines the relative contribution of the upper Hubbard band due to spin correlations at doubly filled sites; and (iii) the contribution of the exchange interaction at pairs of sites, in which the external magnetic field can affect the relation between ferromagnetic and antiferromagnetic configurations. All these factors, which affect the structure and degree of disorder, lead to specific features in the temperature dependence of resistivity and determine specific features of the magnetoresistance. Our conclusions are compared with available experimental data.« less

Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

NASA Technical Reports Server (NTRS)

Frez, Clifford F.; Soibel, Alexander; Belenky, Gregory; Shterengas, Leon; Kipshidze, Gela

2010-01-01

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

Flow to partially penetrating wells in unconfined heterogeneous aquifers: Mean head and interpretation of pumping tests

NASA Astrophysics Data System (ADS)

Dagan, G.; Lessoff, S. C.

2011-06-01

A partially penetrating well of length Lw and radius Rw starts to pump at constant discharge Qw at t = 0 from an unconfined aquifer of thickness D. The aquifer is of random and stationary conductivity characterized by KG (geometric mean), σY2 (log conductivity variance), and I and Iv (the horizontal and vertical integral scales). The flow problem is solved under a few simplifying assumptions commonly adopted in the literature for homogeneous media: Rw/Lw ≪ 1, linearization of the free surface condition, and constant drainable porosity n. Additionally, it is assumed that Rw/I < 1 and Lw/Iv ≫ 1 (to simplify the well boundary conditions) and that a first-order approximation in σY2 (extended to finite σY2 on a conjectural basis) is adopted. The solution is obtained for the mean head field and the associated water table equation. The main result of the analysis is that the flow domain can be divided into three zones for : (1) the neighborhood of the well R ≪ I, where = (Qw/LwKA)h0(R, z, tKefuv/nD), with h0 being the zero-order solution pertaining to a homogeneous and isotropic aquifer, KA being the conductivity arithmetic mean, and Kefuv being the effective vertical conductivity in mean uniform flow, (2) an exterior zone R ⪆ I in which ?H? = (Qw/LwKefuh)h0(R?, z, tKefuv/nD), with Kefuh being the horizontal effective conductivity, and (3) an intermediate zone in which the solution requires a few numerical quadratures, not carried out here. The application to pumping tests reveals that identification of the aquifer parameters for homogeneous and anisotropic aquifers by commonly used methods can be applied for the drawdown measured in an observation well of length Low?Iv (to ensure exchange of space and ensemble head averages) in the second zone in order to identify Kefuh, Kefuv, and n. In contrast, the use of the drawdown in the well (first zone) leads to an overestimation of Kefuh by the factor KA/Kefuh.

Root causes investigation of catastrophic optical bulk damage in high-power InGaAs-AlGaAs strained QW lasers

NASA Astrophysics Data System (ADS)

Sin, Yongkun; Lingley, Zachary; Ayvazian, Talin; Brodie, Miles; Ives, Neil

2018-02-01

High-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers are critical components for both terrestrial and space satellite communications systems. Since these lasers predominantly fail by catastrophic and sudden degradation due to COD, it is especially crucial for space satellite applications to investigate reliability, failure modes, and degradation mechanisms of these lasers. Our group reported a new failure mode in MM and SM InGaAs-AlGaAs strained QW lasers in 2009 and 2016, respectively. Our group also reported in 2017 that bulk failure due to catastrophic optical bulk damage (COBD) is the dominant failure mode of both SM and MM lasers that were subject to long-term life-tests. For the present study, we report root causes investigation of COBD by performing long-term lifetests followed by failure mode analysis (FMA) using various micro-analytical techniques including electron beam induced current (EBIC), time-resolved electroluminescence (EL), focused ion beam (FIB), high-resolution transmission electron microscopy (TEM), and deep level transient spectroscopy (DLTS). Our life-tests with accumulated test hours of over 25,000 hours for SM lasers and over 35,000 hours for MM lasers generated a number of COBD failures with various failure times. EBIC techniques were employed to study dark line defects (DLDs) generated in SM COBD failures stressed under different test conditions. FIB and high-resolution TEM were employed to prepare cross sectional and plan view TEM specimens to study DLD areas (dislocations) in post-aged SM lasers. Time-resolved EL techniques were employed to study initiation and progressions of dark spots and dark lines in real time as MM lasers were aged. Lastly, to investigate precursor signatures of failure and degradation mechanisms responsible for COBD in both SM and MM lasers, we employed DLTS techniques to study a role that electron traps (non-radiative recombination centers) play in degradation of these lasers. Our in-depth root causes investigation results are reported.

Industrial integration of high coherence tunable single frequency semiconductor lasers based on VECSEL technology for scientific instrumentation in NIR and MIR

NASA Astrophysics Data System (ADS)

Lecocq, Vincent; Chomet, Baptiste; Ferrières, Laurence; Myara, Mikhaël.; Beaudoin, Grégoire; Sagnes, Isabelle; Cerutti, Laurent; Denet, Stéphane; Garnache, Arnaud

2017-02-01

Laser technology is finding applications in areas such as high resolution spectroscopy, radar-lidar, velocimetry, or atomic clock where highly coherent tunable high power light sources are required. The Vertical External Cavity Surface Emitting Laser (VECSEL) technology [1] has been identified for years as a good candidate to reach high power, high coherence and broad tunability while covering a wide emission wavelength range exploiting III-V semiconductor technologies. Offering such performances in the Near- and Middle-IR range, GaAs- and Sb-based VECSEL technologies seem to be a well suited path to meet the required specifications of demanding applications. Built up in this field, our expertise allows the realization of compact and low power consumption marketable products, with performances that do not exist on the market today in the 0.8-1.1 μm and 2-2.5 μm spectral range. Here we demonstrate highly coherent broadly tunable single frequency laser micro-chip, intracavity element free, based on a patented VECSEL technology, integrated into a compact module with driving electronics. VECSEL devices emitting in the Near and Middle-IR developed in the frame of this work [2] exhibit exciting features compared to diode-pumped solid-state lasers and DFB diode lasers; they combine high power (>100mW) high temporal coherence together with a low divergence diffraction limited TEM00 beam. They exhibit a class-A dynamics with a Relative Intensity Noise as low as -140dB/Hz and at shot noise level reached above 200MHz RF frequency (up to 160GHz), a free running narrow linewidth at sub MHz level (fundamental limit at Hz level) with high spectral purity (SMSR >55dB), a linear polarization (>50dB suppression ratio), and broadband continuous tunability greater than 400GHz (< 30V piezo voltage, 6kHz cut off frequency) with total tunability up to 3THz. Those performances can all be reached thanks to the high finesse cavity of VECSEL technology, associated to ideal homogeneous QW gain behaviour [3]. In addition, the compact design without any movable intracavity elements offers a robust single frequency regime with a long term wavelength stability better than few GHz/h (ambient thermal drift limited). Those devices surpass the state of the art commercial technologies thanks to a combination of power-coherence-wavelength tunability performances and integration.

Effects of Stimulated Raman Scattering on Light Beam Properties During High-Power Laser Beam Long-Path Propagation

DTIC Science & Technology

1993-11-03

GebhardtFG. Appl Optics, 1976, IS: 1479. (51 Loy MT, Shen MA. IEEE J Q E. 1973, QW-9: 409. [6] ArecchiFT et al. Laser Handbook, North- Holand 1972. (71 ’ Carman...AFIT/ILE 1 P090 NSA/CDB 1 2206 FSL 1 microfkice N~br: F1 ’D93CO000626 FrD-ID(RS) T-0100-93

Evaluating the Transport of Bacillus subtilis Spores as a Potential Surrogate for Cryptosporidium parvum Oocysts.

PubMed

Bradford, Scott A; Kim, Hyunjung; Headd, Brendan; Torkzaban, Saeed

2016-02-02

The U.S. Environmental Protection Agency has recommended the use of aerobic spores as an indicator for Cryptosporidium oocysts when determining groundwater under the direct influence of surface water. Surface properties, interaction energies, transport, retention, and release behavior of B. subtilis spores were measured over a range of physicochemical conditions, and compared with reported information for C. parvum oocysts. Interaction energy calculations predicted a much larger energy barrier and a shallower secondary minimum for spores than oocysts when the solution ionic strength (IS) equaled 0.1, 1, and 10 mM, and no energy barrier when the IS = 100 mM. Spores and oocysts exhibited similar trends of increasing retention with IS and decreasing Darcy water velocity (qw), and the predicted setback distance to achieve a six log removal was always larger for spores than oocysts. However, low levels of observed spore and oocyst release significantly influenced the predicted setback distance, especially when the fraction of reversibly retained microbes (Frev) was high. An estimate for Frev was obtained from large release pulses of spore and oocyst when the IS was reduced to deionized water. The value of Frev always increased with qw, whereas an opposition trend for Frev with IS was observed for spores (decreasing) and oocysts (increasing).

Use of micro-photoluminescence as a contactless measure of the 2D electron density in a GaAs quantum well

NASA Astrophysics Data System (ADS)

Kamburov, D.; Baldwin, K. W.; West, K. W.; Lyon, S.; Pfeiffer, L. N.; Pinczuk, A.

2017-06-01

We compare micro-photoluminescence (μPL) as a measure of the electron density in a clean, two-dimensional (2D) system confined in a GaAs quantum well (QW) to the standard magneto-transport technique. Our study explores the PL shape evolution across a number of molecular beam epitaxy-grown samples with different QW widths and 2D electron densities and notes its correspondence with the density obtained in magneto-transport measurements on these samples. We also measure the 2D density in a top-gated quantum well sample using both PL and transport and find that the two techniques agree to within a few percent over a wide range of gate voltages. We find that the PL measurements are sensitive to gate-induced 2D density changes on the order of 109 electrons/cm2. The spatial resolution of the PL density measurement in our experiments is 40 μm, which is already substantially better than the millimeter-scale resolution now possible in spatial density mapping using magneto-transport. Our results establish that μPL can be used as a reliable high spatial resolution technique for future contactless measurements of density variations in a 2D electron system.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.

Here, InGaAsP/InGaP quantum well (QW) structures are promising materials for next generation photovoltaic devices because of their tunable bandgap (1.50-1.80 eV) and being aluminum-free. However, the strain-balance limitations have previously limited light absorption in the QW region and constrained the external quantum efficiency (EQE) values beyond the In 0.49Ga 0.51P band-edge to less than 25%. In this work, we show that implementing a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing InGaAsP well resulted in more than 2x improvement in EQE values than previously reported strain balanced approaches. In addition, processing the devices with amore » rear optical reflector resulted in strong Fabry-Perot resonance oscillations and the EQE values were highly improved in the vicinity of these peaks, resulting in a short circuit current improvement of 10% relative to devices with a rear optical filter. These enhancements have resulted in an InGaAsP/InGaP superlattice solar cell with improved peak sub-bandgap EQE values exceeding 75% at 700 nm, an improvement in the short circuit current of 26% relative to standard InGaP devices, and an enhanced bandgap-voltage offset (W oc) of 0.4 V.« less

Spin transport at high temperatures in epitaxial Heusler alloy/n-GaAs lateral spin valves

NASA Astrophysics Data System (ADS)

Peterson, Timothy A.; Christie, Kevin D.; Patel, Sahil J.; Crowell, Paul A.; Palmstrøm, Chris J.

2015-03-01

We report on electrical injection and detection of spin accumulation in ferromagnet/ n-GaAs lateral spin-valve devices, observed up to and above room temperature. The ferromagnet in these measurements is the Heusler alloy Co2FeSi, and the semiconductor channel is GaAs doped at 3 ×1016 cm-3. The spin signal is enhanced by operating the detection contact under forward bias. The enhancement originates from drift effects at low-temperatures and an increase of the detection efficiency at all temperatures. The detector bias dependence of the observed spin-valve signal is interpreted by taking into account the quantum well (QW) which forms in the degenerately doped region immediately behind the Schottky tunnel barrier. In particular, we believe the QW is responsible for the minority spin accumulation (majority spin current) under large forward bias. The spin diffusion length and lifetime are determined by measuring the separation dependence of the non-local spin valve signal in a family of devices patterned by electron beam lithography. A spin diffusion length of 700 nm and lifetime of 46 picoseconds are found at a temperature of 295 K. This work was supported by the NSF under DMR-1104951, the NSF MRSEC program and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

2D Ruddlesden-Popper Perovskites Microring Laser Array.

PubMed

Zhang, Haihua; Liao, Qing; Wu, Yishi; Zhang, Zhaoyi; Gao, Qinggang; Liu, Peng; Li, Meili; Yao, Jiannian; Fu, Hongbing

2018-04-01

3D organic-inorganic hybrid perovskites have featured high gain coefficients through the electron-hole plasma stimulated emission mechanism, while their 2D counterparts of Ruddlesden-Popper perovskites (RPPs) exhibit strongly bound electron-hole pairs (excitons) at room temperature. High-performance solar cells and light-emitting diodes (LEDs) are reported based on 2D RPPs, whereas light-amplification devices remain largely unexplored. Here, it is demonstrated that ultrafast energy transfer along cascade quantum well (QW) structures in 2D RPPs concentrates photogenerated carriers on the lowest-bandgap QW state, at which population inversion can be readily established enabling room-temperature amplified spontaneous emission and lasing. Gain coefficients measured for 2D RPP thin-films (≈100 nm in thickness) are found about at least four times larger than those for their 3D counterparts. High-density large-area microring arrays of 2D RPPs are fabricated as whispering-gallery-mode lasers, which exhibit high quality factor (Q ≈ 2600), identical optical modes, and similarly low lasing thresholds, allowing them to be ignited simultaneously as a laser array. The findings reveal that 2D RPPs are excellent solution-processed gain materials potentially for achieving electrically driven lasers and ideally for on-chip integration of nanophotonics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kunert, B.; Guo, W.; Mols, Y.

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an activemore » material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.« less

InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range.

PubMed

Fonseka, H A; Ameruddin, A S; Caroff, P; Tedeschi, D; De Luca, M; Mura, F; Guo, Y; Lysevych, M; Wang, F; Tan, H H; Polimeni, A; Jagadish, C

2017-09-21

The usability and tunability of the essential InP-InGaAs material combination in nanowire-based quantum wells (QWs) are assessed. The wurtzite phase core-multi-shell InP-InGaAs-InP nanowire QWs are characterised using cross-section transmission electron microscopy and photoluminescence measurements. The InP-InGaAs direct interface is found to be sharp while the InGaAs-InP inverted interface is more diffused, in agreement with their planar counterpart. Bright emission is observed from the single nanowires containing the QWs at room temperature, with no emission from the InP core or outer barrier. The tunability of the QW emission wavelength in the 1.3-1.55 μm communication wavelength range is demonstrated by varying the QW thickness and in the 1.3 μm range by varying the composition. The experiments are supported by simulation of the emission wavelength of the wurtzite phase InP-InGaAs QWs in the thickness range considered. The radial heterostructure is further extended to design multiple QWs with bright emission, therefore establishing the capability of this material system for nanowire based optical devices for communication applications.

Microcumpter computation of water quality discharges

USGS Publications Warehouse

Helsel, Dennis R.

1983-01-01

A fully prompted program (SEDQ) has been developed to calculate daily and instantaneous water quality (QW) discharges. It is written in a version of BASIC, and requires inputs of gage heights, discharge rating curve, shifts, and water quality concentration information. Concentration plots may be modified interactively using the display screen. Semi-logarithmic plots of concentration and water quality discharge are output to the display screen, and optionally to plotters. A summary table of data is also output. SEDQ could be a model program for micro and minicomputer systems likely to be in use within the Water Resources Division, USGS, in the near future. The daily discharge-weighted mean concentration is one output from SEDQ. It is defined in this report, differentiated from the currently used mean concentration, and designated the ' equivalent concentration. ' (USGS)

Towards Resonant-State THz Laser Based on Strained p-Ge and SiGe QW Structures

DTIC Science & Technology

2006-07-01

used. The relaxed compositionally graded Si1-xGex/Si(001) buffer layer with low threading dislocations density have been grown by chemical vapour ...observe in absorption experiments. 5. Intracenter optical transitions between hydrogenic levels in doped silicon, germanium, and gallium arsenid [P...34, b. Critical magnetic field Hc vs valence band splitting Δ. Lines show the calculated Hc(Δ) dependence. 14. The gallium -doped Ge crystals with

Prediction of thyroid C-cell carcinogenicity after chronic administration of GLP1-R agonists in rodents.

PubMed

van den Brink, Willem; Emerenciana, Annette; Bellanti, Francesco; Della Pasqua, Oscar; van der Laan, Jan Willem

2017-04-01

Increased incidence of C-cell carcinogenicity has been observed for glucagon-like-protein-1 receptor (GLP-1r) agonists in rodents. It is suggested that the duration of exposure is an indicator of carcinogenic potential in rodents of the different products on the market. Furthermore, the role of GLP-1-related mechanisms in the induction of C-cell carcinogenicity has gained increased attention by regulatory agencies. This study proposes an integrative pharmacokinetic/pharmacodynamic (PKPD) framework to identify explanatory factors and characterize differences in carcinogenic potential of the GLP-1r agonist products. PK models for four products (exenatide QW (once weekly), exenatide BID (twice daily), liraglutide and lixisenatide) were developed using nonlinear mixed effects modelling. Predicted exposure was subsequently linked to GLP-1r stimulation using in vitro GLP-1r potency data. A logistic regression model was then applied to exenatide QW and liraglutide data to assess the relationship between GLP-1r stimulation and thyroid C-cell hyperplasia incidence as pre-neoplastic predictor of a carcinogenic response. The model showed a significant association between predicted GLP-1r stimulation and C-cell hyperplasia after 2years of treatment. The predictive performance of the model was evaluated using lixisenatide, for which hyperplasia data were accurately described during the validation step. The use of a model-based approach provided insight into the relationship between C-cell hyperplasia and GLP-1r stimulation for all four products, which is not possible with traditional data analysis methods. It can be concluded that both pharmacokinetics (exposure) and pharmacodynamics (potency for GLP-1r) factors determine C-cell hyperplasia incidence in rodents. Our work highlights the pharmacological basis for GLP-1r agonist-induced C-cell carcinogenicity. The concept is promising for application to other drug classes. Copyright © 2017 Elsevier Inc. All rights reserved.

Optical properties of wide gap semiconductors studied by means of cathodoluminescence

NASA Astrophysics Data System (ADS)

Fischer Ponce, Alec Mirco

III-nitride semiconductors have been found to be a suitable material for the fabrication of light-emitting diodes (LEDs) emitting in the visible and ultraviolet range through the use of indium gallium nitride (InGaN) active layers. Yet, achieving high-efficient and long lasting LEDs in the long wavelength range, especially in the green spectral region, is limited by difficulties of growth of InGaN layers with high indium content. Additionally, device efficiency is strongly dependent on the formation of low-resistive p-type gallium nitride (GaN)-based layers. In this dissertation, the optical properties of wide gap semiconductor are analyzed using cathodoluminescence imaging and spectroscopy, and time-resolved spectroscopic techniques. A transition at 3.2 eV in magnesium (Mg)-doped GaN has been revealed and it has been identified as a Mg-related donor-acceptor pair, which may be responsible for the increase in intensity with increasing magnesium concentration in the commonly observed donor-acceptor pair region. In a separate study, a decrease of the Mg acceptor energy level and the bulk resistivity in Mg-doped InGaN with increasing indium composition is observed, implying that InGaN p-layers should improve the device performance. Next, Mg-doped GaN and InGaN capping layers in LED structures grown under different ambient gases are shown to alter the quantum well (QW) luminescence. QWs grown with InGaN p-layers exhibit an improvement in the luminescence efficiency and a blue-shift due to reduction of the compressive misfit strain in the QWs. However, p-GaN layers grown under hydrogen ambient gas present a blue-shift of the QW emission. Hydrogen diffusion occurring after thermal annealing of the p-GaN layer may explain the reduction of piezoelectric field effects in polar InGaN quantum wells. In another study, InGaN QWs with high indium content grown in non-polar m-plane GaN were found to exhibit stacking faults originating at the first QW, relaxing the misfit strain in the subsequent layers. Finally, the optical and structural properties of highly luminescent zinc oxide (ZnO) tetrapod powders emitting in the visible green spectral range were studied with high spatial resolution. ZnO nanostructures are strong candidates for devices emitting light with very high efficiencies.

Molecular beam epitaxy growth and characterization of two-six materials for visible semiconductor lasers

NASA Astrophysics Data System (ADS)

Zeng, Linfei

This thesis proposes the molecular beam epitaxy (MBE) growth and characterization of a new Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se based semiconductor materials system on InP substrates for visible light emitting diodes (LED) and lasers. The growth conditions for lattice-matched Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se layers with the desired bandgap have been established and optimized. A chemical etching technique to measure the defect density of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se materials has been established. The accuracy of this method for revealing stacking faults and dislocations was verified by plan-view TEM. Using the techniques such as III-V buffer layer, Zn-irradiation, low-temperature growth, ZnCdSe interfacial layer and growth interruption to improve the quality of the interface of III-V and II-VI, the material quality of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se has been improved dramatically. Defect density has been reduced from 10sp{10}\\ cmsp{-2} to {˜}5×10sp4\\ cmsp{-2}. The properties of this material system such as the quality and strain state in the epilayer, the dependence of bandgap on temperature, and the band offset have been studied by using double crystal x-ray diffraction, photoluminescence and capacitance voltage measurements. The ZnCdSe/ZnCdMgSe based quantum well (QW) structures have been grown and studied. Optically pumped lasing with emission range from red to blue has been obtained from ZnCdSe/ZnCdMgSe based separate-confinement single QW laser structures. The results demonstrate the potential for these materials as integrated full color display devices. Preliminary studies of the degradation behavior of ZnCdSe/ZnCdMgSe QW were performed. No dark line defects (DLDs) were observed during the degradation. A very strong room temperature differential negative resistance behavior was observed from Al/Znsb{0.61}Cdsb{0.39}Se/nsp+-InP devices, which is useful in millimeter-wave applications. We also found that these devices can be set to either in highly conductive or nonconductive state within a given probing voltage region, which can be used as nonvolatile memories.

Photometry of symbiotic stars. XI. EG And, Z And, BF Cyg, CH Cyg, CI Cyg, V1329 Cyg, TX CVn, AG Dra, RW Hya, AR Pav, AG Peg, AX Per, QW Sge, IV Vir and the LMXB V934 Her

NASA Astrophysics Data System (ADS)

Skopal, A.; Pribulla, T.; Vaňko, M.; Velič, Z.; Semkov, E.; Wolf, M.; Jones, A.

2004-02-01

We present new photometric observations of EG And, Z And, BF Cyg, CH Cyg, CI Cyg, V1329 Cyg, TX CVn, AG Dra, RW Hya, AG Peg, AX Per, IV Vir and the peculiar M giant V934 Her, which were made in the standard Johnson UBV(R) system. QW Sge was measured in the Kron-Cousin B, V, RC, IC system and for AR Pav we present its new visual estimates. The current issue gathers observations of these objects to December 2003. The main results can be summarized as follows: EG And: The primary minimum in the U light curve (LC) occurred at the end of 2002. A 0.2 -- 0.3 mag brightening in U was detected in the autumn of 2003. Z And: At around August 2002 we detected for the first time a minimum, which is due to eclipse of the active object by the red giant. Measurements from 2003.3 are close to those of a quiescent phase. BF Cyg: In February 2003 a short-term flare developed in the LC. A difference in the depth of recent minima was detected. CH Cyg: This star was in a quiescent phase at a rather bright state. A shallow minimum occurred at ˜ JD 2 452 730, close to the position of the inferior conjunction of the giant in the inner binary of the triple-star model of CH Cyg. CI Cyg: Our observations cover the descending branch of a broad minimum. TX CVn: At/around the beginning of 2003 the star entered a bright stage containing a minimum at ˜ JD 2 452 660. AG Dra: New observations revealed two eruptions, which peaked in October 2002 and 2003 at ˜ 9.3 in U. AR Pav: Our new visual estimates showed a transient disappearance of a wave-like modulation in the star's brightness between the minima at epochs E = 66 and E = 68 and its reappearance. AG Peg: Our measurements from the end of 2001 showed rather complex profile of the LC. RW Hya: Observations follow behaviour of the wave-like variability of quiet symbiotics. AX Per: In May 2003 a 0.5 mag flare was detected following a rapid decrease of the light to a minimum. QW Sge: CCD observations in B, V, RC, IC bands cover a period from 1994.5 to 2003.5. An increase in the star's brightness by about 1 mag was observed in all passbands in 1997. Less pronounced brightening was detected in 1999/2000. V934 Her: Our observations did not show any larger variation in the optical as a reaction to its X-ray activity.

Optoelectronic Devices Based on Novel Semiconductor Structures

DTIC Science & Technology

2006-06-14

superlattices 4. TEM study and band -filling effects in quantum-well dots 5. Improvements on tuning ranges and output powers for widely-tunable THz sources...the pump power increases the relative strength for the QW emission in the QWD sample also increases. Eventually at the sufficiently- high pump power ...Ahopelto, Appl. Phys. Lett. 66, 2364 (1995). 5. A monochromatic and high - power THz source tunable in the ranges of 2.7-38.4 ptm and 58.2-3540 ptm for

Theoretical Analysis of Cancer Detection in the Human Breast by Transillumination.

DTIC Science & Technology

1987-12-01

wavelength spectrum and increases in the near infrared. In 1983, Bartrum and Crow (5:409) reported that transillumination light scanning can yield clinical ...results comparable to mamnography if Athe personnel who are interpreting light scan images are trained and have some knowledge of other clinical data...related to the patient. When -4- QW !N N 11111111 ’ 1111111! I iil 11 l~ i m the light scan interpreter is blind to other relevant clinical data, a

Anderson localization on the Cayley tree: multifractal statistics of the transmission at criticality and off criticality

NASA Astrophysics Data System (ADS)

Monthus, Cécile; Garel, Thomas

2011-04-01

In contrast to finite dimensions where disordered systems display multifractal statistics only at criticality, the tree geometry induces multifractal statistics for disordered systems also off criticality. For the Anderson tight-binding localization model defined on a tree of branching ratio K = 2 with N generations, we consider the Miller-Derrida scattering geometry (1994 J. Stat. Phys. 75 357), where an incoming wire is attached to the root of the tree, and where KN outcoming wires are attached to the leaves of the tree. In terms of the KN transmission amplitudes tj, the total Landauer transmission is T ≡ ∑j|tj|2, so that each channel j is characterized by the weight wj = |tj|2/T. We numerically measure the typical multifractal singularity spectrum f(α) of these weights as a function of the disorder strength W and we obtain the following conclusions for its left termination point α+(W). In the delocalized phase W < Wc, α+(W) is strictly positive α+(W) > 0 and is associated with a moment index q+(W) > 1. At criticality, it vanishes α+(Wc) = 0 and is associated with the moment index q+(Wc) = 1. In the localized phase W > Wc, α+(W) = 0 is associated with some moment index q+(W) < 1. We discuss the similarities with the exact results concerning the multifractal properties of the directed polymer on the Cayley tree.

Renormalization of the unitary evolution equation for coined quantum walks

NASA Astrophysics Data System (ADS)

Boettcher, Stefan; Li, Shanshan; Portugal, Renato

2017-03-01

We consider discrete-time evolution equations in which the stochastic operator of a classical random walk is replaced by a unitary operator. Such a problem has gained much attention as a framework for coined quantum walks that are essential for attaining the Grover limit for quantum search algorithms in physically realizable, low-dimensional geometries. In particular, we analyze the exact real-space renormalization group (RG) procedure recently introduced to study the scaling of quantum walks on fractal networks. While this procedure, when implemented numerically, was able to provide some deep insights into the relation between classical and quantum walks, its analytic basis has remained obscure. Our discussion here is laying the groundwork for a rigorous implementation of the RG for this important class of transport and algorithmic problems, although some instances remain unresolved. Specifically, we find that the RG fixed-point analysis of the classical walk, which typically focuses on the dominant Jacobian eigenvalue {λ1} , with walk dimension dw\\text{RW}={{log}2}{λ1} , needs to be extended to include the subdominant eigenvalue {λ2} , such that the dimension of the quantum walk obtains dw\\text{QW}={{log}2}\\sqrt{{λ1}{λ2}} . With that extension, we obtain analytically previously conjectured results for dw\\text{QW} of Grover walks on all but one of the fractal networks that have been considered.

100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%

DOE PAGES

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.; ...

2017-08-25

Here, InGaAsP/InGaP quantum well (QW) structures are promising materials for next generation photovoltaic devices because of their tunable bandgap (1.50-1.80 eV) and being aluminum-free. However, the strain-balance limitations have previously limited light absorption in the QW region and constrained the external quantum efficiency (EQE) values beyond the In 0.49Ga 0.51P band-edge to less than 25%. In this work, we show that implementing a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing InGaAsP well resulted in more than 2x improvement in EQE values than previously reported strain balanced approaches. In addition, processing the devices with amore » rear optical reflector resulted in strong Fabry-Perot resonance oscillations and the EQE values were highly improved in the vicinity of these peaks, resulting in a short circuit current improvement of 10% relative to devices with a rear optical filter. These enhancements have resulted in an InGaAsP/InGaP superlattice solar cell with improved peak sub-bandgap EQE values exceeding 75% at 700 nm, an improvement in the short circuit current of 26% relative to standard InGaP devices, and an enhanced bandgap-voltage offset (W oc) of 0.4 V.« less

Nanoscale visualization of electronic properties of AlxGa1-xN/AlyGa1-yN multiple quantum-well heterostructure by spreading resistance microscopy

NASA Astrophysics Data System (ADS)

Sviridov, D. E.; Kozlovsky, V. I.; Rong, X.; Chen, G.; Wang, X.; Jmerik, V. N.; Kirilenko, D. A.; Ivanov, S. V.

2017-01-01

Cross-sectional spreading resistance microscopy has been used to investigate nanoscale variations in electronic properties of an undoped Al0.75Ga0.25N/Al0.95Ga0.05N multiple quantum well (MQW) heterostructure grown by plasma-assisted molecular beam epitaxy on an AlN/c-sapphire template, prepared by metalorganic vapor phase epitaxy. It is found that a current signal from the MQWs can be detected only at a negative sample bias. Moreover, its value changes periodically from one quantum well (QW) to another. Analysis of the current-voltage characteristics of the contacts of a tip with the structure layers showed that periodic contrast of MQWs is the result of fluctuations of the chemical composition of the QWs and the concentration of electrons accumulated in them. Mathematical simulations indicate that this modulation is associated with the periodic fluctuations of an Al-mole fraction in the barrier layers of the structure due to counter gradients of the intensity of Al and Ga molecular fluxes across the surface of a substrate rotating slowly during growth. The nanoscale fluctuations of the current contrast observed along the QW layers are caused, most likely, by the presence of the areas of lateral carrier localization, which originate during the formation of QWs by sub-monolayer digital alloying technique.

Long-term management of moderate-to-severe atopic dermatitis with dupilumab and concomitant topical corticosteroids (LIBERTY AD CHRONOS): a 1-year, randomised, double-blinded, placebo-controlled, phase 3 trial.

PubMed

Blauvelt, Andrew; de Bruin-Weller, Marjolein; Gooderham, Melinda; Cather, Jennifer C; Weisman, Jamie; Pariser, David; Simpson, Eric L; Papp, Kim A; Hong, H Chih-Ho; Rubel, Diana; Foley, Peter; Prens, Errol; Griffiths, Christopher E M; Etoh, Takafumi; Pinto, Pedro Herranz; Pujol, Ramon M; Szepietowski, Jacek C; Ettler, Karel; Kemény, Lajos; Zhu, Xiaoping; Akinlade, Bolanle; Hultsch, Thomas; Mastey, Vera; Gadkari, Abhijit; Eckert, Laurent; Amin, Nikhil; Graham, Neil M H; Pirozzi, Gianluca; Stahl, Neil; Yancopoulos, George D; Shumel, Brad

2017-06-10

Dupilumab (an anti-interleukin-4-receptor-α monoclonal antibody) blocks signalling of interleukin 4 and interleukin 13, type 2/Th2 cytokines implicated in numerous allergic diseases ranging from asthma to atopic dermatitis. Previous 16-week monotherapy studies showed that dupilumab substantially improved signs and symptoms of moderate-to-severe atopic dermatitis with acceptable safety, validating the crucial role of interleukin 4 and interleukin 13 in atopic dermatitis pathogenesis. We aimed to evaluate the long-term efficacy and safety of dupilumab with medium-potency topical corticosteroids versus placebo with topical corticosteroids in adults with moderate-to-severe atopic dermatitis. In this 1-year, randomised, double-blinded, placebo-controlled, phase 3 study (LIBERTY AD CHRONOS), adults with moderate-to-severe atopic dermatitis and inadequate response to topical corticosteroids were enrolled at 161 hospitals, clinics, and academic institutions in 14 countries in Europe, Asia-Pacific, and North America. Patients were randomly assigned (3:1:3) to subcutaneous dupilumab 300 mg once weekly (qw), dupilumab 300 mg every 2 weeks (q2w), or placebo via a central interactive voice/web response system, stratified by severity and global region. All three groups were given concomitant topical corticosteroids with or without topical calcineurin inhibitors where inadvisable for topical corticosteroids. Topical corticosteroids could be tapered, stopped, or restarted on the basis of disease activity. Coprimary endpoints were patients (%) achieving Investigator's Global Assessment (IGA) 0/1 and 2-point or higher improvement from baseline, and Eczema Area and Severity Index 75% improvement from baseline (EASI-75) at week 16. Week 16 efficacy and week 52 safety analyses included all randomised patients; week 52 efficacy included patients who completed treatment by US regulatory submission cutoff. This study is registered with ClinicalTrials.gov, NCT02260986. Between Oct 3, 2014, and July 31, 2015, 740 patients were enrolled: 319 were randomly assigned to dupilumab qw plus topical corticosteroids, 106 to dupilumab q2w plus topical corticosteroids, and 315 to placebo plus topical corticosteroids. 623 (270, 89, and 264, respectively) were evaluable for week 52 efficacy. At week 16, more patients who received dupilumab plus topical corticosteroids achieved the coprimary endpoints of IGA 0/1 (39% [125 patients] who received dupilumab plus topical corticosteroids qw and 39% [41 patients] who received dupilumab q2w plus topical corticosteroids vs 12% [39 patients] who received placebo plus topical corticosteroids; p<0·0001) and EASI-75 (64% [204] and 69% [73] vs 23% [73]; p<0·0001). Week 52 results were similar. Adverse events were reported in 261 (83%) patients who received dupilumab qw plus topical corticosteroids, 97 (88%) patients who received dupilumab q2w, and 266 (84%) patients who received placebo, and serious adverse events in nine (3%), four (4%), and 16 (5%) patients, respectively. No significant dupilumab-induced laboratory abnormalities were noted. Injection-site reactions and conjunctivitis were more common in patients treated with dupilumab plus topical corticosteroids-treated patients than in patients treated with placebo plus topical corticosteroids. Dupilumab added to standard topical corticosteroid treatment for 1 year improved atopic dermatitis signs and symptoms, with acceptable safety. Sanofi and Regeneron Pharmaceuticals Inc. Copyright © 2017 Elsevier Ltd. All rights reserved.

A Caltech MURI Center for Quantum Networks

DTIC Science & Technology

2006-05-31

the code. Thus the dimension of the code space is n5uPfAu5detD , ~64! where PfA denotes the Pfaffian, the square root of the deter- minant of the...material properties, such as bulk ab- sorption and surface scattering. However, as one moves to very small spheres with radius a&10 mm, the intrinsic...1550 nm, which yields a quality factor of Qbulk;3.8310 11. The quality factor due to surface scattering Qs.s. and ab- sorption by adsorbed water Qw has

Optimal Dynamic Soaring for Full Size Sailplanes

DTIC Science & Technology

2006-09-01

began with a brief overview of the motivation behind this research, the history of the sport of soaring, and an explanation of traditional static...defined below. sin( ) XFu Rv Qw g m θ • = − − + (43) sin( )cos( ) YFv Ru Pw g m φ θ • = − + + + (44) cos( ) cos( ) ZFw Qu Pv g m φ θ...Figure 52. LAMARS Facility LAMARS was chosen as a build up to the final flight simulator because of its successful 30 year history of simulating

Real Time Imaging Analysis Using a Terahertz Quantum Cascade Laser and a Microbolometer Focal Plane Array

DTIC Science & Technology

2008-12-01

evident from Figure 7 that, if the applied bias is not correct, it is very likely that electrons will not tunnel into their intended energy state...the theoretical laser contrasts sharply to that of semiconductor lasers. Semiconductor lasers rely on electron hole recombination or interband ...the active layer of a forward- biased pn junction [26]. In contrast to this, the QCL is a unipolar device that uses a quantum well (QW) structure

Upgrading Basements for Combined Nuclear Weapons Effects: Predesigned Expedient Options II.

DTIC Science & Technology

1980-07-01

0 I, ~ N 0L 4..o I4 0W! a1. &40 a m-bV,- i-bazI2 D :4-1 4.] ai-a z -a *QT’ 5 -. a o a Da - , L, Icix C. w+ .- :£ a Qw3- Eck !4 za wD 4𔄁. ato 404Qa a U...Emergency Management Agency Washington, D.C. 20472 (60) 1725 1 Street, N.W. Washington, D.C. 20472 Defense TEchnical Information Center Cameron Station Mr

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

NASA Astrophysics Data System (ADS)

Lau, Wayne Heung

This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton-QD (QW) coupled system is inhibited and polariton bound states are formed within the polaritonic energy gap. A theory is also developed to study the polariton eigenenergy spectrum, polariton effective mass, and polariton spectral density of N identical semiconductor QDs (QWs) or a superlattice (SL) placed inside a III--V semiconductor. A polariton-impurity band lying within the polaritonic energy gap of the III--V semiconductor is predicted when the resonance energies of the QDs (QWs) lie inside the polaritonic energy gap. Hole-like polariton effective mass of the polariton-impurity band is predicted. It is also predicted that the spectral density of the polariton has a Lorentzian shape if the resonance energies of the QDs (QWs) lie outside the polaritonic gap.

Water quality of streams in Johnson County, Kansas, 2002-07

USGS Publications Warehouse

Rasmussen, T.J.

2009-01-01

Water quality of streams in Johnson County, Kansas was evaluated from October 2002 through December 2007 in a cooperative study between the U.S. Geological Survey and the Johnson County Stormwater Management Program. Water quality at 42 stream sites, representing urban and rural basins, was characterized by evaluating benthic macroinvertebrates, water (discrete and continuous data), and/or streambed sediment. Point and nonpoint sources and transport were described for water-quality constituents including suspended sediment, dissolved solids and major ions, nutrients (nitrogen and phosphorus), indicator bacteria, pesticides, and organic wastewater and pharmaceutical compounds. The information obtained from this study is being used by city and county officials to develop effective management plans for protecting and improving stream quality. This fact sheet summarizes important results from three comprehensive reports published as part of the study and available on the World Wide Web at http://ks.water.usgs.gov/Kansas/studies/qw/joco/. ?? 2009 ASCE.

Water quality of streams in Johnson County, Kansas, 2002-07

USGS Publications Warehouse

Rasmussen, Teresa J.

2008-01-01

Water quality of streams in Johnson County, Kansas was evaluated from October 2002 through December 2007 in a cooperative study between the U.S. Geological Survey and the Johnson County Stormwater Management Program. Water quality at 42 stream sites, representing urban and rural basins, was characterized by evaluating benthic macroinvertebrates, water (discrete and continuous data), and/or streambed sediment. Point and nonpoint sources and transport were described for water-quality constituents including suspended sediment, dissolved solids and major ions, nutrients (nitrogen and phosphorus), indicator bacteria, pesticides, and organic wastewater and pharmaceutical compounds. The information obtained from this study is being used by city and county officials to develop effective management plans for protecting and improving stream quality. This fact sheet summarizes important results from three comprehensive reports published as part of the study and available on the World Wide Web at http://ks.water.usgs.gov/Kansas/studies/qw/joco/ .

Search for massive resonances in dijet systems containing jets tagged as W or Z boson decays in pp collisions at = 8 TeV

NASA Astrophysics Data System (ADS)

Khachatryan, V.; Sirunyan, A. M.; Tumasyan, A.; Adam, W.; Bergauer, T.; Dragicevic, M.; Erö, J.; Fabjan, C.; Friedl, M.; Frühwirth, R.; Ghete, V. M.; Hartl, C.; Hörmann, N.; Hrubec, J.; Jeitler, M.; Kiesenhofer, W.; Knünz, V.; Krammer, M.; Krätschmer, I.; Liko, D.; Mikulec, I.; Rabady, D.; Rahbaran, B.; Rohringer, H.; Schöfbeck, R.; Strauss, J.; Taurok, A.; Treberer-Treberspurg, W.; Waltenberger, W.; Wulz, C.-E.; Mossolov, V.; Shumeiko, N.; Gonzalez, J. Suarez; Alderweireldt, S.; Bansal, M.; Bansal, S.; Cornelis, T.; De Wolf, E. A.; Janssen, X.; Knutsson, A.; Luyckx, S.; Ochesanu, S.; Roland, B.; Rougny, R.; Van De Klundert, M.; Van Haevermaet, H.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Blekman, F.; Blyweert, S.; D'Hondt, J.; Daci, N.; Heracleous, N.; Kalogeropoulos, A.; Keaveney, J.; Kim, T. J.; Lowette, S.; Maes, M.; Olbrechts, A.; Python, Q.; Strom, D.; Tavernier, S.; Van Doninck, W.; Van Mulders, P.; Van Onsem, G. P.; Villella, I.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Gay, A. P. R.; Grebenyuk, A.; Léonard, A.; Mohammadi, A.; Perniè, L.; Reis, T.; Seva, T.; Thomas, L.; Velde, C. Vander; Vanlaer, P.; Wang, J.; Adler, V.; Beernaert, K.; Benucci, L.; Cimmino, A.; Costantini, S.; Crucy, S.; Dildick, S.; Fagot, A.; Garcia, G.; Klein, B.; Mccartin, J.; Rios, A. A. Ocampo; Ryckbosch, D.; Diblen, S. Salva; Sigamani, M.; Strobbe, N.; Thyssen, F.; Tytgat, M.; Yazgan, E.; Zaganidis, N.; Basegmez, S.; Beluffi, C.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; Da Silveira, G. G.; Delaere, C.; du Pree, T.; Favart, D.; Forthomme, L.; Giammanco, A.; Hollar, J.; Jez, P.; Komm, M.; Lemaitre, V.; Liao, J.; Nuttens, C.; Pagano, D.; Pin, A.; Piotrzkowski, K.; Popov, A.; Quertenmont, L.; Selvaggi, M.; Marono, M. Vidal; Garcia, J. M. Vizan; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G. H.; Alves, G. A.; Martins, M. Correa; Martins, T. Dos Reis; Pol, M. E.; Aldá, W. L.; Carvalho, W.; Chinellato, J.; Custódio, A.; Da Costa, E. M.; De Jesus Damiao, D.; De Oliveira Martins, C.; De Souza, S. Fonseca; Malbouisson, H.; Malek, M.; Figueiredo, D. Matos; Mundim, L.; Nogima, H.; Da Silva, W. L. Prado; Santaolalla, J.; Santoro, A.; Sznajder, A.; Manganote, E. J. Tonelli; Pereira, A. Vilela; Bernardes, C. A.; Dias, F. A.; Tomei, T. R. Fernandez Perez; Gregores, E. M.; Mercadante, P. G.; Novaes, S. F.; Padula, Sandra S.; Aleksandrov, A.; Genchev, V.; Iaydjiev, P.; Marinov, A.; Piperov, S.; Rodozov, M.; Sultanov, G.; Vutova, M.; Dimitrov, A.; Glushkov, I.; Hadjiiska, R.; Kozhuharov, V.; Litov, L.; Pavlov, B.; Petkov, P.; Bian, J. G.; Chen, G. M.; Chen, H. S.; Chen, M.; Du, R.; Jiang, C. H.; Liang, D.; Liang, S.; Plestina, R.; Tao, J.; Wang, X.; Wang, Z.; Asawatangtrakuldee, C.; Ban, Y.; Guo, Y.; Li, Q.; Li, W.; Liu, S.; Mao, Y.; Qian, S. J.; Wang, D.; Zhang, L.; Zou, W.; Avila, C.; Sierra, L. F. Chaparro; Florez, C.; Gomez, J. P.; Moreno, B. Gomez; Sanabria, J. C.; Godinovic, N.; Lelas, D.; Polic, D.; Puljak, I.; Antunovic, Z.; Kovac, M.; Brigljevic, V.; Kadija, K.; Luetic, J.; Mekterovic, D.; Sudic, L.; Attikis, A.; Mavromanolakis, G.; Mousa, J.; Nicolaou, C.; Ptochos, F.; Razis, P. A.; Bodlak, M.; Finger, M.; Finger, M.; Assran, Y.; Elgammal, S.; Mahmoud, M. A.; Radi, A.; Kadastik, M.; Murumaa, M.; Raidal, M.; Tiko, A.; Eerola, P.; Fedi, G.; Voutilainen, M.; Härkönen, J.; Karimäki, V.; Kinnunen, R.; Kortelainen, M. J.; Lampén, T.; Lassila-Perini, K.; Lehti, S.; Lindén, T.; Luukka, P.; Mäenpää, T.; Peltola, T.; Tuominen, E.; Tuominiemi, J.; Tuovinen, E.; Wendland, L.; Tuuva, T.; Besancon, M.; Couderc, F.; Dejardin, M.; Denegri, D.; Fabbro, B.; Faure, J. L.; Favaro, C.; Ferri, F.; Ganjour, S.; Givernaud, A.; Gras, P.; de Monchenault, G. Hamel; Jarry, P.; Locci, E.; Malcles, J.; Nayak, A.; Rander, J.; Rosowsky, A.; Titov, M.; Baffioni, S.; Beaudette, F.; Busson, P.; Charlot, C.; Dahms, T.; Dalchenko, M.; Dobrzynski, L.; Filipovic, N.; Florent, A.; de Cassagnac, R. Granier; Mastrolorenzo, L.; Miné, P.; Mironov, C.; Naranjo, I. N.; Nguyen, M.; Ochando, C.; Paganini, P.; Salerno, R.; Sauvan, J. B.; Sirois, Y.; Veelken, C.; Yilmaz, Y.; Zabi, A.; Agram, J.-L.; Andrea, J.; Aubin, A.; Bloch, D.; Brom, J.-M.; Chabert, E. C.; Collard, C.; Conte, E.; Fontaine, J.-C.; Gelé, D.; Goerlach, U.; Goetzmann, C.; Le Bihan, A.-C.; Van Hove, P.; Gadrat, S.; Beauceron, S.; Beaupere, N.; Boudoul, G.; Brochet, S.; Montoya, C. A. Carrillo; De Oliveira, A. Carvalho Antunes; Chasserat, J.; Chierici, R.; Contardo, D.; Depasse, P.; El Mamouni, H.; Fan, J.; Fay, J.; Gascon, S.; Gouzevitch, M.; Ille, B.; Kurca, T.; Lethuillier, M.; Mirabito, L.; Perries, S.; Alvarez, J. D. Ruiz; Sabes, D.; Sgandurra, L.; Sordini, V.; Donckt, M. Vander; Verdier, P.; Viret, S.; Xiao, H.; Tsamalaidze, Z.; Autermann, C.; Beranek, S.; Bontenackels, M.; Calpas, B.; Edelhoff, M.; Feld, L.; Hindrichs, O.; Klein, K.; Ostapchuk, A.; Perieanu, A.; Raupach, F.; Sammet, J.; Schael, S.; Sprenger, D.; Weber, H.; Wittmer, B.; Zhukov, V.; Ata, M.; Caudron, J.; Dietz-Laursonn, E.; Duchardt, D.; Erdmann, M.; Fischer, R.; Güth, A.; Hebbeker, T.; Heidemann, C.; Hoepfner, K.; Klingebiel, D.; Knutzen, S.; Kreuzer, P.; Merschmeyer, M.; Meyer, A.; Olschewski, M.; Padeken, K.; Papacz, P.; Reithler, H.; Schmitz, S. A.; Sonnenschein, L.; Teyssier, D.; Thüer, S.; Weber, M.; Cherepanov, V.; Erdogan, Y.; Flügge, G.; Geenen, H.; Geisler, M.; Ahmad, W. Haj; Hoehle, F.; Kargoll, B.; Kress, T.; Kuessel, Y.; Lingemann, J.; Nowack, A.; Nugent, I. M.; Perchalla, L.; Pooth, O.; Stahl, A.; Asin, I.; Bartosik, N.; Behr, J.; Behrenhoff, W.; Behrens, U.; Bell, A. J.; Bergholz, M.; Bethani, A.; Borras, K.; Burgmeier, A.; Cakir, A.; Calligaris, L.; Campbell, A.; Choudhury, S.; Costanza, F.; Pardos, C. Diez; Dooling, S.; Dorland, T.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Flucke, G.; Garcia, J. Garay; Geiser, A.; Gunnellini, P.; Hauk, J.; Hellwig, G.; Hempel, M.; Horton, D.; Jung, H.; Kasemann, M.; Katsas, P.; Kieseler, J.; Kleinwort, C.; Krücker, D.; Lange, W.; Leonard, J.; Lipka, K.; Lobanov, A.; Lohmann, W.; Lutz, B.; Mankel, R.; Marfin, I.; Melzer-Pellmann, I.-A.; Meyer, A. B.; Mnich, J.; Mussgiller, A.; Naumann-Emme, S.; Novgorodova, O.; Nowak, F.; Ntomari, E.; Perrey, H.; Pitzl, D.; Placakyte, R.; Raspereza, A.; Cipriano, P. M. Ribeiro; Ron, E.; Sahin, M. Ö.; Salfeld-Nebgen, J.; Saxena, P.; Schmidt, R.; Schoerner-Sadenius, T.; Schröder, M.; Spannagel, S.; Trevino, A. D. R. Vargas; Walsh, R.; Wissing, C.; Martin, M. Aldaya; Blobel, V.; Vignali, M. Centis; Erfle, J.; Garutti, E.; Goebel, K.; Görner, M.; Gosselink, M.; Haller, J.; Höing, R. S.; Kirschenmann, H.; Klanner, R.; Kogler, R.; Lange, J.; Lapsien, T.; Lenz, T.; Marchesini, I.; Ott, J.; Peiffer, T.; Pietsch, N.; Rathjens, D.; Sander, C.; Schettler, H.; Schleper, P.; Schlieckau, E.; Schmidt, A.; Seidel, M.; Sibille, J.; Sola, V.; Stadie, H.; Steinbrück, G.; Troendle, D.; Usai, E.; Vanelderen, L.; Barth, C.; Baus, C.; Berger, J.; Böser, C.; Butz, E.; Chwalek, T.; De Boer, W.; Descroix, A.; Dierlamm, A.; Feindt, M.; Hartmann, F.; Hauth, T.; Husemann, U.; Katkov, I.; Kornmayer, A.; Kuznetsova, E.; Pardo, P. Lobelle; Mozer, M. U.; Müller, Th.; Nürnberg, A.; Quast, G.; Rabbertz, K.; Ratnikov, F.; Röcker, S.; Simonis, H. J.; Stober, F. M.; Ulrich, R.; Wagner-Kuhr, J.; Wayand, S.; Weiler, T.; Wolf, R.; Anagnostou, G.; Daskalakis, G.; Geralis, T.; Giakoumopoulou, V. A.; Kyriakis, A.; Loukas, D.; Markou, A.; Markou, C.; Psallidas, A.; Topsis-Giotis, I.; Gouskos, L.; Panagiotou, A.; Saoulidou, N.; Stiliaris, E.; Aslanoglou, X.; Evangelou, I.; Flouris, G.; Foudas, C.; Kokkas, P.; Manthos, N.; Papadopoulos, I.; Paradas, E.; Bencze, G.; Hajdu, C.; Hidas, P.; Horvath, D.; Sikler, F.; Veszpremi, V.; Vesztergombi, G.; Zsigmond, A. J.; Beni, N.; Czellar, S.; Karancsi, J.; Molnar, J.; Palinkas, J.; Szillasi, Z.; Raics, P.; Trocsanyi, Z. L.; Ujvari, B.; Swain, S. K.; Beri, S. B.; Bhatnagar, V.; Dhingra, N.; Gupta, R.; Kalsi, A. K.; Kaur, M.; Mittal, M.; Nishu, N.; Singh, J. B.; Kumar, Ashok; Kumar, Arun; Ahuja, S.; Bhardwaj, A.; Choudhary, B. C.; Kumar, A.; Malhotra, S.; Naimuddin, M.; Ranjan, K.; Sharma, V.; Banerjee, S.; Bhattacharya, S.; Chatterjee, K.; Dutta, S.; Gomber, B.; Jain, Sa.; Jain, Sh.; Khurana, R.; Modak, A.; Mukherjee, S.; Roy, D.; Sarkar, S.; Sharan, M.; Abdulsalam, A.; Dutta, D.; Kailas, S.; Kumar, V.; Mohanty, A. K.; Pant, L. M.; Shukla, P.; Topkar, A.; Aziz, T.; Chatterjee, R. M.; Ganguly, S.; Ghosh, S.; Guchait, M.; Gurtu, A.; Kole, G.; Kumar, S.; Maity, M.; Majumder, G.; Mazumdar, K.; Mohanty, G. B.; Parida, B.; Sudhakar, K.; Wickramage, N.; Banerjee, S.; Dewanjee, R. K.; Dugad, S.; Bakhshiansohi, H.; Behnamian, H.; Etesami, S. M.; Fahim, A.; Goldouzian, R.; Jafari, A.; Khakzad, M.; Najafabadi, M. Mohammadi; Naseri, M.; Mehdiabadi, S. Paktinat; Safarzadeh, B.; Zeinali, M.; Felcini, M.; Grunewald, M.; Abbrescia, M.; Barbone, L.; Calabria, C.; Chhibra, S. S.; Colaleo, A.; Creanza, D.; De Filippis, N.; De Palma, M.; Fiore, L.; Iaselli, G.; Maggi, G.; Maggi, M.; My, S.; Nuzzo, S.; Pompili, A.; Pugliese, G.; Radogna, R.; Selvaggi, G.; Silvestris, L.; Singh, G.; Venditti, R.; Verwilligen, P.; Zito, G.; Abbiendi, G.; Benvenuti, A. C.; Bonacorsi, D.; Braibant-Giacomelli, S.; Brigliadori, L.; Campanini, R.; Capiluppi, P.; Castro, A.; Cavallo, F. R.; Codispoti, G.; Cuffiani, M.; Dallavalle, G. M.; Fabbri, F.; Fanfani, A.; Fasanella, D.; Giacomelli, P.; Grandi, C.; Guiducci, L.; Marcellini, S.; Masetti, G.; Montanari, A.; Navarria, F. L.; Perrotta, A.; Primavera, F.; Rossi, A. M.; Rovelli, T.; Siroli, G. P.; Tosi, N.; Travaglini, R.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Potenza, R.; Tricomi, A.; Tuve, C.; Barbagli, G.; Ciulli, V.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Gallo, E.; Gonzi, S.; Gori, V.; Lenzi, P.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Tropiano, A.; Benussi, L.; Bianco, S.; Fabbri, F.; Piccolo, D.; Ferro, F.; Vetere, M. Lo; Robutti, E.; Tosi, S.; Dinardo, M. E.; Fiorendi, S.; Gennai, S.; Gerosa, R.; Ghezzi, A.; Govoni, P.; Lucchini, M. T.; Malvezzi, S.; Manzoni, R. A.; Martelli, A.; Marzocchi, B.; Menasce, D.; Moroni, L.; Paganoni, M.; Pedrini, D.; Ragazzi, S.; Redaelli, N.; de Fatis, T. Tabarelli; Buontempo, S.; Cavallo, N.; Di Guida, S.; Fabozzi, F.; Iorio, A. O. M.; Lista, L.; Meola, S.; Merola, M.; Paolucci, P.; Azzi, P.; Bacchetta, N.; Bisello, D.; Branca, A.; Carlin, R.; Checchia, P.; Dall'Osso, M.; Dorigo, T.; Dosselli, U.; Galanti, M.; Gasparini, F.; Gasparini, U.; Giubilato, P.; Gozzelino, A.; Kanishchev, K.; Lacaprara, S.; Margoni, M.; Meneguzzo, A. T.; Pazzini, J.; Pozzobon, N.; Ronchese, P.; Simonetto, F.; Torassa, E.; Tosi, M.; Zotto, P.; Zucchetta, A.; Zumerle, G.; Gabusi, M.; Ratti, S. P.; Riccardi, C.; Salvini, P.; Vitulo, P.; Biasini, M.; Bilei, G. M.; Ciangottini, D.; Fanò, L.; Lariccia, P.; Mantovani, G.; Menichelli, M.; Romeo, F.; Saha, A.; Santocchia, A.; Spiezia, A.; Androsov, K.; Azzurri, P.; Bagliesi, G.; Bernardini, J.; Boccali, T.; Broccolo, G.; Castaldi, R.; Ciocci, M. A.; Dell'Orso, R.; Donato, S.; Fiori, F.; Foà, L.; Giassi, A.; Grippo, M. T.; Ligabue, F.; Lomtadze, T.; Martini, L.; Messineo, A.; Moon, C. S.; Palla, F.; Rizzi, A.; Savoy-Navarro, A.; Serban, A. T.; Spagnolo, P.; Squillacioti, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Vernieri, C.; Barone, L.; Cavallari, F.; Del Re, D.; Diemoz, M.; Grassi, M.; Jorda, C.; Longo, E.; Margaroli, F.; Meridiani, P.; Micheli, F.; Nourbakhsh, S.; Organtini, G.; Paramatti, R.; Rahatlou, S.; Rovelli, C.; Santanastasio, F.; Soffi, L.; Traczyk, P.; Amapane, N.; Arcidiacono, R.; Argiro, S.; Arneodo, M.; Bellan, R.; Biino, C.; Cartiglia, N.; Casasso, S.; Costa, M.; Degano, A.; Demaria, N.; Finco, L.; Mariotti, C.; Maselli, S.; Migliore, E.; Monaco, V.; Musich, M.; Obertino, M. M.; Ortona, G.; Pacher, L.; Pastrone, N.; Pelliccioni, M.; Angioni, G. L. Pinna; Potenza, A.; Romero, A.; Ruspa, M.; Sacchi, R.; Solano, A.; Staiano, A.; Tamponi, U.; Belforte, S.; Candelise, V.; Casarsa, M.; Cossutti, F.; Ricca, G. Della; Gobbo, B.; La Licata, C.; Marone, M.; Montanino, D.; Schizzi, A.; Umer, T.; Zanetti, A.; Chang, S.; Kropivnitskaya, A.; Nam, S. K.; Kim, D. H.; Kim, G. N.; Kim, M. S.; Kong, D. J.; Lee, S.; Oh, Y. D.; Park, H.; Sakharov, A.; Son, D. C.; Kim, J. Y.; Song, S.; Choi, S.; Gyun, D.; Hong, B.; Jo, M.; Kim, H.; Kim, Y.; Lee, B.; Lee, K. S.; Park, S. K.; Roh, Y.; Choi, M.; Kim, J. H.; Park, I. C.; Park, S.; Ryu, G.; Ryu, M. S.; Choi, Y.; Choi, Y. K.; Goh, J.; Kwon, E.; Lee, J.; Seo, H.; Yu, I.; Juodagalvis, A.; Komaragiri, J. R.; Castilla-Valdez, H.; De La Cruz-Burelo, E.; La Cruz, I. Heredia-de; Lopez-Fernandez, R.; SanchezHernandez, A.; Moreno, S. Carrillo; Valencia, F. Vazquez; Pedraza, I.; Ibarguen, H. A. Salazar; Linares, E. Casimiro; Pineda, A. Morelos; Krofcheck, D.; Butler, P. H.; Reucroft, S.; Ahmad, A.; Ahmad, M.; Hassan, Q.; Hoorani, H. R.; Khalid, S.; Khan, W. A.; Khurshid, T.; Shah, M. A.; Shoaib, M.; Bialkowska, H.; Bluj, M.; Boimska, B.; Frueboes, T.; Górski, M.; Kazana, M.; Nawrocki, K.; Romanowska-Rybinska, K.; Szleper, M.; Zalewski, P.; Brona, G.; Bunkowski, K.; Cwiok, M.; Dominik, W.; Doroba, K.; Kalinowski, A.; Konecki, M.; Krolikowski, J.; Misiura, M.; Olszewski, M.; Wolszczak, W.; Bargassa, P.; Da Cruz E Silva, C. Beirão; Faccioli, P.; Parracho, P. G. Ferreira; Gallinaro, M.; Nguyen, F.; Antunes, J. Rodrigues; Seixas, J.; Varela, J.; Vischia, P.; Afanasiev, S.; Bunin, P.; Gavrilenko, M.; Golutvin, I.; Gorbunov, I.; Kamenev, A.; Karjavin, V.; Konoplyanikov, V.; Lanev, A.; Malakhov, A.; Matveev, V.; Moisenz, P.; Palichik, V.; Perelygin, V.; Shmatov, S.; Skatchkov, N.; Smirnov, V.; Zarubin, A.; Golovtsov, V.; Ivanov, Y.; Kim, V.; Levchenko, P.; Murzin, V.; Oreshkin, V.; Smirnov, I.; Sulimov, V.; Uvarov, L.; Vavilov, S.; Vorobyev, A.; Vorobyev, An.; Andreev, Yu.; Dermenev, A.; Gninenko, S.; Golubev, N.; Kirsanov, M.; Krasnikov, N.; Pashenkov, A.; Tlisov, D.; Toropin, A.; Epshteyn, V.; Gavrilov, V.; Lychkovskaya, N.; Popov, V.; Safronov, G.; Semenov, S.; Spiridonov, A.; Stolin, V.; Vlasov, E.; Zhokin, A.; Andreev, V.; Azarkin, M.; Dremin, I.; Kirakosyan, M.; Leonidov, A.; Mesyats, G.; Rusakov, S. V.; Vinogradov, A.; Belyaev, A.; Boos, E.; Dubinin, M.; Dudko, L.; Ershov, A.; Gribushin, A.; Klyukhin, V.; Kodolova, O.; Lokhtin, I.; Obraztsov, S.; Petrushanko, S.; Savrin, V.; Snigirev, A.; Azhgirey, I.; Bayshev, I.; Bitioukov, S.; Kachanov, V.; Kalinin, A.; Konstantinov, D.; Krychkine, V.; Petrov, V.; Ryutin, R.; Sobol, A.; Tourtchanovitch, L.; Troshin, S.; Tyurin, N.; Uzunian, A.; Volkov, A.; Adzic, P.; Dordevic, M.; Ekmedzic, M.; Milosevic, J.; Maestre, J. Alcaraz; Battilana, C.; Calvo, E.; Cerrada, M.; Llatas, M. Chamizo; Colino, N.; De La Cruz, B.; Peris, A. Delgado; Vázquez, D. Domínguez; Del Valle, A. Escalante; Bedoya, C. Fernandez; Ramos, J. P. Fernández; Flix, J.; Fouz, M. C.; Garcia-Abia, P.; Lopez, O. Gonzalez; Lopez, S. Goy; Hernandez, J. M.; Josa, M. I.; Merino, G.; De Martino, E. Navarro; Yzquierdo, A. Pérez-Calero; Pelayo, J. Puerta; Olmeda, A. Quintario; Redondo, I.; Romero, L.; Soares, M. S.; Albajar, C.; de Trocóniz, J. F.; Missiroli, M.; Brun, H.; Cuevas, J.; Menendez, J. Fernandez; Folgueras, S.; Caballero, I. Gonzalez; Iglesias, L. Lloret; Cifuentes, J. A. Brochero; Cabrillo, I. J.; Calderon, A.; Campderros, J. Duarte; Fernandez, M.; Gomez, G.; Graziano, A.; Virto, A. Lopez; Marco, J.; Marco, R.; Rivero, C. Martinez; Matorras, F.; Sanchez, F. J. Munoz; Gomez, J. Piedra; Rodrigo, T.; Rodríguez-Marrero, A. Y.; Ruiz-Jimeno, A.; Scodellaro, L.; Vila, I.; Cortabitarte, R. Vilar; Abbaneo, D.; Auffray, E.; Auzinger, G.; Bachtis, M.; Baillon, P.; Ball, A. H.; Barney, D.; Benaglia, A.; Bendavid, J.; Benhabib, L.; Benitez, J. F.; Bernet, C.; Bianchi, G.; Bloch, P.; Bocci, A.; Bonato, A.; Bondu, O.; Botta, C.; Breuker, H.; Camporesi, T.; Cerminara, G.; Christiansen, T.; Colafranceschi, S.; D'Alfonso, M.; d'Enterria, D.; Dabrowski, A.; David, A.; De Guio, F.; De Roeck, A.; De Visscher, S.; Dobson, M.; Dupont-Sagorin, N.; Elliott-Peisert, A.; Eugster, J.; Franzoni, G.; Funk, W.; Giffels, M.; Gigi, D.; Gill, K.; Giordano, D.; Girone, M.; Glege, F.; Guida, R.; Gundacker, S.; Guthoff, M.; Hammer, J.; Hansen, M.; Harris, P.; Hegeman, J.; Innocente, V.; Janot, P.; Kousouris, K.; Krajczar, K.; Lecoq, P.; Lourenço, C.; Magini, N.; Malgeri, L.; Mannelli, M.; Masetti, L.; Meijers, F.; Mersi, S.; Meschi, E.; Moortgat, F.; Morovic, S.; Mulders, M.; Musella, P.; Orsini, L.; Pape, L.; Perez, E.; Perrozzi, L.; Petrilli, A.; Petrucciani, G.; Pfeiffer, A.; Pierini, M.; Pimiä, M.; Piparo, D.; Plagge, M.; Racz, A.; Rolandi, G.; Rovere, M.; Sakulin, H.; Schäfer, C.; Schwick, C.; Sekmen, S.; Sharma, A.; Siegrist, P.; Silva, P.; Simon, M.; Sphicas, P.; Spiga, D.; Steggemann, J.; Stieger, B.; Stoye, M.; Treille, D.; Tsirou, A.; Veres, G. I.; Vlimant, J. R.; Wardle, N.; Wöhri, H. K.; Zeuner, W. D.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Ingram, Q.; Kaestli, H. C.; König, S.; Kotlinski, D.; Langenegger, U.; Renker, D.; Rohe, T.; Bachmair, F.; Bäni, L.; Bianchini, L.; Bortignon, P.; Buchmann, M. A.; Casal, B.; Chanon, N.; Deisher, A.; Dissertori, G.; Dittmar, M.; Donegà, M.; Dünser, M.; Eller, P.; Grab, C.; Hits, D.; Lustermann, W.; Mangano, B.; Marini, A. C.; del Arbol, P. Martinez Ruiz; Meister, D.; Mohr, N.; Nägeli, C.; Nef, P.; Nessi-Tedaldi, F.; Pandolfi, F.; Pauss, F.; Peruzzi, M.; Quittnat, M.; Rebane, L.; Ronga, F. J.; Rossini, M.; Starodumov, A.; Takahashi, M.; Theofilatos, K.; Wallny, R.; Weber, H. A.; Amsler, C.; Canelli, M. F.; Chiochia, V.; De Cosa, A.; Hinzmann, A.; Hreus, T.; Rikova, M. Ivova; Kilminster, B.; Mejias, B. Millan; Ngadiuba, J.; Robmann, P.; Snoek, H.; Taroni, S.; Verzetti, M.; Yang, Y.; Cardaci, M.; Chen, K. H.; Ferro, C.; Kuo, C. M.; Lin, W.; Lu, Y. J.; Volpe, R.; Yu, S. S.; Chang, P.; Chang, Y. H.; Chang, Y. W.; Chao, Y.; Chen, K. F.; Chen, P. H.; Dietz, C.; Grundler, U.; Hou, W.-S.; Kao, K. Y.; Lei, Y. J.; Liu, Y. F.; Lu, R.-S.; Majumder, D.; Petrakou, E.; Shi, X.; Tzeng, Y. M.; Wilken, R.; Asavapibhop, B.; Srimanobhas, N.; Suwonjandee, N.; Adiguzel, A.; Bakirci, M. N.; Cerci, S.; Dozen, C.; Dumanoglu, I.; Eskut, E.; Girgis, S.; Gokbulut, G.; Gurpinar, E.; Hos, I.; Kangal, E. E.; Topaksu, A. Kayis; Onengut, G.; Ozdemir, K.; Ozturk, S.; Polatoz, A.; Sogut, K.; Cerci, D. Sunar; Tali, B.; Topakli, H.; Vergili, M.; Akin, I. V.; Bilin, B.; Bilmis, S.; Gamsizkan, H.; Karapinar, G.; Ocalan, K.; Surat, U. E.; Yalvac, M.; Zeyrek, M.; Gülmez, E.; Isildak, B.; Kaya, M.; Kaya, O.; Bahtiyar, H.; Barlas, E.; Cankocak, K.; Vardarlí, F. I.; Yücel, M.; Levchuk, L.; Sorokin, P.; Brooke, J. J.; Clement, E.; Cussans, D.; Flacher, H.; Frazier, R.; Goldstein, J.; Grimes, M.; Heath, G. P.; Heath, H. F.; Jacob, J.; Kreczko, L.; Lucas, C.; Meng, Z.; Newbold, D. M.; Paramesvaran, S.; Poll, A.; Senkin, S.; Smith, V. J.; Williams, T.; Bell, K. W.; Belyaev, A.; Brew, C.; Brown, R. M.; Cockerill, D. J. A.; Coughlan, J. A.; Harder, K.; Harper, S.; Olaiya, E.; Petyt, D.; Shepherd-Themistocleous, C. H.; Thea, A.; Tomalin, I. R.; Womersley, W. J.; Worm, S. D.; Baber, M.; Bainbridge, R.; Buchmuller, O.; Burton, D.; Colling, D.; Cripps, N.; Cutajar, M.; Dauncey, P.; Davies, G.; Negra, M. Della; Dunne, P.; Ferguson, W.; Fulcher, J.; Futyan, D.; Gilbert, A.; Hall, G.; Iles, G.; Jarvis, M.; Karapostoli, G.; Kenzie, M.; Lane, R.; Lucas, R.; Lyons, L.; Magnan, A.-M.; Malik, S.; Marrouche, J.; Mathias, B.; Nash, J.; Nikitenko, A.; Pela, J.; Pesaresi, M.; Petridis, K.; Raymond, D. M.; Rogerson, S.; Rose, A.; Seez, C.; Sharp, P.; Tapper, A.; Acosta, M. Vazquez; Virdee, T.; Cole, J. E.; Hobson, P. R.; Khan, A.; Kyberd, P.; Leggat, D.; Leslie, D.; Martin, W.; Reid, I. D.; Symonds, P.; Teodorescu, L.; Turner, M.; Dittmann, J.; Hatakeyama, K.; Kasmi, A.; Liu, H.; Scarborough, T.; Charaf, O.; Cooper, S. I.; Henderson, C.; Rumerio, P.; Avetisyan, A.; Bose, T.; Fantasia, C.; Heister, A.; Lawson, P.; Richardson, C.; Rohlf, J.; Sperka, D.; John, J. St.; Sulak, L.; Alimena, J.; Bhattacharya, S.; Christopher, G.; Cutts, D.; Demiragli, Z.; Ferapontov, A.; Garabedian, A.; Heintz, U.; Jabeen, S.; Kukartsev, G.; Laird, E.; Landsberg, G.; Luk, M.; Narain, M.; Segala, M.; Sinthuprasith, T.; Speer, T.; Swanson, J.; Breedon, R.; Breto, G.; De La Barca Sanchez, M. Calderon; Chauhan, S.; Chertok, M.; Conway, J.; Conway, R.; Cox, P. T.; Erbacher, R.; Gardner, M.; Ko, W.; Lander, R.; Miceli, T.; Mulhearn, M.; Pellett, D.; Pilot, J.; Ricci-Tam, F.; Searle, M.; Shalhout, S.; Smith, J.; Squires, M.; Stolp, D.; Tripathi, M.; Wilbur, S.; Yohay, R.; Cousins, R.; Everaerts, P.; Farrell, C.; Hauser, J.; Ignatenko, M.; Rakness, G.; Takasugi, E.; Valuev, V.; Weber, M.; Babb, J.; Clare, R.; Ellison, J.; Gary, J. W.; Hanson, G.; Heilman, J.; Jandir, P.; Kennedy, E.; Lacroix, F.; Liu, H.; Long, O. R.; Luthra, A.; Malberti, M.; Nguyen, H.; Shrinivas, A.; Sturdy, J.; Sumowidagdo, S.; Wimpenny, S.; Andrews, W.; Branson, J. G.; Cerati, G. B.; Cittolin, S.; D'Agnolo, R. T.; Evans, D.; Holzner, A.; Kelley, R.; Lebourgeois, M.; Letts, J.; Macneill, I.; Olivito, D.; Padhi, S.; Palmer, C.; Pieri, M.; Sani, M.; Sharma, V.; Simon, S.; Sudano, E.; Tadel, M.; Tu, Y.; Vartak, A.; Würthwein, F.; Yagil, A.; Yoo, J.; Barge, D.; Bradmiller-Feld, J.; Campagnari, C.; Danielson, T.; Dishaw, A.; Flowers, K.; Sevilla, M. Franco; Geffert, P.; George, C.; Golf, F.; Incandela, J.; Justus, C.; Mccoll, N.; Richman, J.; Stuart, D.; To, W.; West, C.; Apresyan, A.; Bornheim, A.; Bunn, J.; Chen, Y.; Di Marco, E.; Duarte, J.; Mott, A.; Newman, H. B.; Pena, C.; Rogan, C.; Spiropulu, M.; Timciuc, V.; Wilkinson, R.; Xie, S.; Zhu, R. Y.; Azzolini, V.; Calamba, A.; Carroll, R.; Ferguson, T.; Iiyama, Y.; Paulini, M.; Russ, J.; Vogel, H.; Vorobiev, I.; Cumalat, J. P.; Drell, B. R.; Ford, W. T.; Gaz, A.; Lopez, E. Luiggi; Nauenberg, U.; Smith, J. G.; Stenson, K.; Ulmer, K. A.; Wagner, S. R.; Alexander, J.; Chatterjee, A.; Chu, J.; Dittmer, S.; Eggert, N.; Hopkins, W.; Kreis, B.; Mirman, N.; Kaufman, G. Nicolas; Patterson, J. R.; Ryd, A.; Salvati, E.; Skinnari, L.; Sun, W.; Teo, W. D.; Thom, J.; Thompson, J.; Tucker, J.; Weng, Y.; Winstrom, L.; Wittich, P.; Winn, D.; Abdullin, S.; Albrow, M.; Anderson, J.; Apollinari, G.; Bauerdick, L. A. T.; Beretvas, A.; Berryhill, J.; Bhat, P. C.; Burkett, K.; Butler, J. N.; Cheung, H. W. K.; Chlebana, F.; Cihangir, S.; Elvira, V. D.; Fisk, I.; Freeman, J.; Gottschalk, E.; Gray, L.; Green, D.; Grünendahl, S.; Gutsche, O.; Hanlon, J.; Hare, D.; Harris, R. M.; Hirschauer, J.; Hooberman, B.; Jindariani, S.; Johnson, M.; Joshi, U.; Kaadze, K.; Klima, B.; Kwan, S.; Linacre, J.; Lincoln, D.; Lipton, R.; Liu, T.; Lykken, J.; Maeshima, K.; Marraffino, J. M.; Outschoorn, V. I. Martinez; Maruyama, S.; Mason, D.; McBride, P.; Mishra, K.; Mrenna, S.; Musienko, Y.; Nahn, S.; Newman-Holmes, C.; O'Dell, V.; Prokofyev, O.; Sexton-Kennedy, E.; Sharma, S.; Soha, A.; Spalding, W. J.; Spiegel, L.; Taylor, L.; Tkaczyk, S.; Tran, N. V.; Uplegger, L.; Vaandering, E. W.; Vidal, R.; Whitbeck, A.; Whitmore, J.; Yang, F.; Acosta, D.; Avery, P.; Bourilkov, D.; Carver, M.; Cheng, T.; Curry, D.; Das, S.; De Gruttola, M.; Di Giovanni, G. P.; Field, R. D.; Fisher, M.; Furic, I. K.; Hugon, J.; Konigsberg, J.; Korytov, A.; Kypreos, T.; Low, J. F.; Matchev, K.; Milenovic, P.; Mitselmakher, G.; Muniz, L.; Rinkevicius, A.; Shchutska, L.; Skhirtladze, N.; Snowball, M.; Yelton, J.; Zakaria, M.; Gaultney, V.; Hewamanage, S.; Linn, S.; Markowitz, P.; Martinez, G.; Rodriguez, J. L.; Adams, T.; Askew, A.; Bochenek, J.; Diamond, B.; Haas, J.; Hagopian, S.; Hagopian, V.; Johnson, K. F.; Prosper, H.; Veeraraghavan, V.; Weinberg, M.; Baarmand, M. M.; Hohlmann, M.; Kalakhety, H.; Yumiceva, F.; Adams, M. R.; Apanasevich, L.; Bazterra, V. E.; Berry, D.; Betts, R. R.; Bucinskaite, I.; Cavanaugh, R.; Evdokimov, O.; Gauthier, L.; Gerber, C. E.; Hofman, D. J.; Khalatyan, S.; Kurt, P.; Moon, D. H.; O'Brien, C.; Silkworth, C.; Turner, P.; Varelas, N.; Albayrak, E. A.; Bilki, B.; Clarida, W.; Dilsiz, K.; Duru, F.; Haytmyradov, M.; Merlo, J.-P.; Mermerkaya, H.; Mestvirishvili, A.; Moeller, A.; Nachtman, J.; Ogul, H.; Onel, Y.; Ozok, F.; Penzo, A.; Rahmat, R.; Sen, S.; Tan, P.; Tiras, E.; Wetzel, J.; Yetkin, T.; Yi, K.; Barnett, B. A.; Blumenfeld, B.; Bolognesi, S.; Fehling, D.; Gritsan, A. V.; Maksimovic, P.; Martin, C.; Swartz, M.; Xin, Y.; Baringer, P.; Bean, A.; Benelli, G.; Bruner, C.; Gray, J.; Kenny, R. P.; Murray, M.; Noonan, D.; Sanders, S.; Sekaric, J.; Stringer, R.; Wang, Q.; Wood, J. S.; Barfuss, A. F.; Chakaberia, I.; Ivanov, A.; Khalil, S.; Makouski, M.; Maravin, Y.; Saini, L. K.; Shrestha, S.; Svintradze, I.; Gronberg, J.; Lange, D.; Rebassoo, F.; Wright, D.; Baden, A.; Calvert, B.; Eno, S. C.; Gomez, J. A.; Hadley, N. J.; Kellogg, R. G.; Kolberg, T.; Lu, Y.; Marionneau, M.; Mignerey, A. C.; Pedro, K.; Skuja, A.; Tonjes, M. B.; Tonwar, S. C.; Apyan, A.; Barbieri, R.; Bauer, G.; Busza, W.; Cali, I. A.; Chan, M.; Di Matteo, L.; Dutta, V.; Ceballos, G. Gomez; Goncharov, M.; Gulhan, D.; Klute, M.; Lai, Y. S.; Lee, Y.-J.; Levin, A.; Luckey, P. D.; Ma, T.; Paus, C.; Ralph, D.; Roland, C.; Roland, G.; Stephans, G. S. F.; Stöckli, F.; Sumorok, K.; Velicanu, D.; Veverka, J.; Wyslouch, B.; Yang, M.; Zanetti, M.; Zhukova, V.; Dahmes, B.; De Benedetti, A.; Gude, A.; Kao, S. C.; Klapoetke, K.; Kubota, Y.; Mans, J.; Pastika, N.; Rusack, R.; Singovsky, A.; Tambe, N.; Turkewitz, J.; Acosta, J. G.; Oliveros, S.; Avdeeva, E.; Bloom, K.; Bose, S.; Claes, D. R.; Dominguez, A.; Suarez, R. Gonzalez; Keller, J.; Knowlton, D.; Kravchenko, I.; Lazo-Flores, J.; Malik, S.; Meier, F.; Snow, G. R.; Dolen, J.; Godshalk, A.; Iashvili, I.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alverson, G.; Barberis, E.; Baumgartel, D.; Chasco, M.; Haley, J.; Massironi, A.; Morse, D. M.; Nash, D.; Orimoto, T.; Trocino, D.; Wood, D.; Zhang, J.; Hahn, K. A.; Kubik, A.; Mucia, N.; Odell, N.; Pollack, B.; Pozdnyakov, A.; Schmitt, M.; Stoynev, S.; Sung, K.; Velasco, M.; Won, S.; Brinkerhoff, A.; Chan, K. M.; Drozdetskiy, A.; Hildreth, M.; Jessop, C.; Karmgard, D. J.; Kellams, N.; Lannon, K.; Luo, W.; Lynch, S.; Marinelli, N.; Pearson, T.; Planer, M.; Ruchti, R.; Valls, N.; Wayne, M.; Wolf, M.; Woodard, A.; Antonelli, L.; Brinson, J.; Bylsma, B.; Durkin, L. S.; Flowers, S.; Hill, C.; Hughes, R.; Kotov, K.; Ling, T. Y.; Puigh, D.; Rodenburg, M.; Smith, G.; Vuosalo, C.; Winer, B. L.; Wolfe, H.; Wulsin, H. W.; Berry, E.; Driga, O.; Elmer, P.; Hebda, P.; Hunt, A.; Koay, S. A.; Lujan, P.; Marlow, D.; Medvedeva, T.; Mooney, M.; Olsen, J.; Piroué, P.; Quan, X.; Saka, H.; Stickland, D.; Tully, C.; Werner, J. S.; Zenz, S. C.; Zuranski, A.; Brownson, E.; Mendez, H.; Vargas, J. E. Ramirez; Alagoz, E.; Barnes, V. E.; Benedetti, D.; Bolla, G.; Bortoletto, D.; De Mattia, M.; Everett, A.; Hu, Z.; Jha, M. K.; Jones, M.; Jung, K.; Kress, M.; Leonardo, N.; Pegna, D. Lopes; Maroussov, V.; Merkel, P.; Miller, D. H.; Neumeister, N.; Radburn-Smith, B. C.; Shipsey, I.; Silvers, D.; Svyatkovskiy, A.; Wang, F.; Xie, W.; Xu, L.; Yoo, H. D.; Zablocki, J.; Zheng, Y.; Parashar, N.; Stupak, J.; Adair, A.; Akgun, B.; Ecklund, K. M.; Geurts, F. J. M.; Li, W.; Michlin, B.; Padley, B. P.; Redjimi, R.; Roberts, J.; Zabel, J.; Betchart, B.; Bodek, A.; Covarelli, R.; de Barbaro, P.; Demina, R.; Eshaq, Y.; Ferbel, T.; Garcia-Bellido, A.; Goldenzweig, P.; Han, J.; Harel, A.; Khukhunaishvili, A.; Miner, D. C.; Petrillo, G.; Vishnevskiy, D.; Ciesielski, R.; Demortier, L.; Goulianos, K.; Mesropian, C.; Arora, S.; Barker, A.; Chou, J. P.; Contreras-Campana, C.; Contreras-Campana, E.; Duggan, D.; Ferencek, D.; Gershtein, Y.; Gray, R.; Halkiadakis, E.; Hidas, D.; Lath, A.; Panwalkar, S.; Park, M.; Patel, R.; Rekovic, V.; Salur, S.; Schnetzer, S.; Seitz, C.; Somalwar, S.; Stone, R.; Thomas, S.; Thomassen, P.; Walker, M.; Rose, K.; Spanier, S.; York, A.; Bouhali, O.; Eusebi, R.; Flanagan, W.; Gilmore, J.; Kamon, T.; Khotilovich, V.; Krutelyov, V.; Montalvo, R.; Osipenkov, I.; Pakhotin, Y.; Perloff, A.; Roe, J.; Rose, A.; Safonov, A.; Sakuma, T.; Suarez, I.; Tatarinov, A.; Akchurin, N.; Cowden, C.; Damgov, J.; Dragoiu, C.; Dudero, P. R.; Faulkner, J.; Kovitanggoon, K.; Kunori, S.; Lee, S. W.; Libeiro, T.; Volobouev, I.; Appelt, E.; Delannoy, A. G.; Greene, S.; Gurrola, A.; Johns, W.; Maguire, C.; Mao, Y.; Melo, A.; Sharma, M.; Sheldon, P.; Snook, B.; Tuo, S.; Velkovska, J.; Arenton, M. W.; Boutle, S.; Cox, B.; Francis, B.; Goodell, J.; Hirosky, R.; Ledovskoy, A.; Li, H.; Lin, C.; Neu, C.; Wood, J.; Gollapinni, S.; Harr, R.; Karchin, P. E.; Don, C. Kottachchi Kankanamge; Lamichhane, P.; Belknap, D. A.; Carlsmith, D.; Cepeda, M.; Dasu, S.; Duric, S.; Friis, E.; Hall-Wilton, R.; Herndon, M.; Hervé, A.; Klabbers, P.; Klukas, J.; Lanaro, A.; Lazaridis, C.; Levine, A.; Loveless, R.; Mohapatra, A.; Ojalvo, I.; Perry, T.; Pierro, G. A.; Polese, G.; Ross, I.; Sarangi, T.; Savin, A.; Smith, W. H.; Woods, N.

2014-08-01

A search is reported for massive resonances decaying into a quark and a vector boson (W or Z), or two vector bosons (WW, WZ, or ZZ). The analysis is performed on an inclusive sample of multijet events corresponding to an integrated luminosity of 19.7 fb-1, collected in proton-proton collisions at a centre-of-mass energy of 8 TeV with the CMS detector at the LHC. The search uses novel jet-substructure identification techniques that provide sensitivity to the presence of highly boosted vector bosons decaying into a pair of quarks. Exclusion limits are set at a confidence level of 95% on the production of: (i) excited quark resonances q*decaying to qW and qZ for masses less than 3.2 TeV and 2.9 TeV, respectively, (ii) a Randall-Sundrum graviton GRS decaying into WW for masses below 1.2 TeV, and (iii) a heavy partner of the W boson W' decaying into WZ for masses less than 1.7 TeV. For the first time mass limits are set on W' → WZ and GRS → WW in the all-jets final state. The mass limits on q* → qW, q* → qZ, W' → WZ, GRS → WW are the most stringent to date. A model with a "bulk" graviton Gbulk that decays into WW or ZZ bosons is also studied. [Figure not available: see fulltext.

Spin-related origin of the magnetotransport feature at filling factor 7/11

NASA Astrophysics Data System (ADS)

Gamez, Gerardo; Muraki, Koji

2010-03-01

Experiments by Pan et al. disclosed quantum Hall (QH) effect-like features at unconventional filling fractions, such as 4/11 and 7/11, not included in the Jain sequence [1]. These features were considered as evidence for a new class of fractional quantum Hall (FQH) states whose origin, unlike ordinary FQH states, is linked to interactions between composite fermions (CFs). However, the exact origin of these features is not well established yet. Here we focus on 7/11, where a minimum in the longitudinal resistance and a plateau-like structure in the Hall resistance are observed at a much higher field, 11.4 T, in a 30-nm quantum well (QW). Our density-dependent studies show that at this field, the FQH states flanking 7/11, viz. the 2/3 and 3/5 states, are both fully spin polarized. Despite of this fact, tilted-field experiments reveal that the 7/11 feature weakens and then disappears upon tilting. Using a CF model, we show that the spin degree of freedom may not be completely frozen in the region between the 2/3 and 3/5 states even when both states are fully polarized. Systematic studies unveil that the exact location of the 7/11 feature depends on the electron density and the QW width, in accordance with the model. Our model can also account for the reported contrasting behavior upon tilting of 7/11 and its electron-hole counterpart 4/11. [1] Pan et al., Phys. Rev. Lett. 90, 016801 (2003).

Phase 1 trial of the oral AKT inhibitor MK-2206 plus carboplatin/paclitaxel, docetaxel, or erlotinib in patients with advanced solid tumors.

PubMed

Molife, L Rhoda; Yan, Li; Vitfell-Rasmussen, Joanna; Zernhelt, Adriane M; Sullivan, Daniel M; Cassier, Philippe A; Chen, Eric; Biondo, Andrea; Tetteh, Ernestina; Siu, Lillian L; Patnaik, Amita; Papadopoulos, Kyriakos P; de Bono, Johann S; Tolcher, Anthony W; Minton, Susan

2014-01-03

Inhibition of AKT with MK-2206 has demonstrated synergism with anticancer agents. This phase 1 study assessed the MTD, DLTs, PK, and efficacy of MK-2206 in combination with cytotoxic and targeted therapies. Advanced solid tumor patients received oral MK-2206 45 or 60 mg (QOD) with either carboplatin (AUC 6.0) and paclitaxel 200 mg/m2 (arm 1), docetaxel 75 mg/m2 (arm 2), or erlotinib 100 or 150 mg daily (arm 3); alternative schedules of MK-2206 135-200 mg QW or 90-250 mg Q3W were also tested. MTD of MK-2206 (N = 72) was 45 mg QOD or 200 mg Q3W (arm 1); MAD was 200 mg Q3W (arm 2) and 135 mg QW (arm 3). DLTs included skin rash (arms 1, 3), febrile neutropenia (QOD, arms 1, 2), tinnitus (Q3W, arm 2), and stomatitis (QOD, arm 3). Common drug-related toxicities included fatigue (68%), nausea (49%), and rash (47%). Two patients with squamous cell carcinoma of the head and neck (arm 1; Q3W) demonstrated a complete and partial response (PR); additional PRs were observed in patients (1 each) with melanoma, endometrial, neuroendocrine prostate, NSCLC, and cervical cancers. Six patients had stable disease ≥6 months. MK-2206 plus carboplatin and paclitaxel, docetaxel, or erlotinib was well-tolerated, with early evidence of antitumor activity.

Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy

NASA Astrophysics Data System (ADS)

Nami, Mohsen; Eller, Rhett F.; Okur, Serdal; Rishinaramangalam, Ashwin K.; Liu, Sheng; Brener, Igal; Feezell, Daniel F.

2017-01-01

Controlled bottom-up selective-area epitaxy (SAE) is used to tailor the morphology and photoluminescence properties of GaN/InGaN core-shell nanowire arrays. The nanowires are grown on c-plane sapphire substrates using pulsed-mode metal organic chemical vapor deposition. By varying the dielectric mask configuration and growth conditions, we achieve GaN nanowire cores with diameters ranging from 80 to 700 nm that exhibit various degrees of polar, semipolar, and nonpolar faceting. A single InGaN quantum well (QW) and GaN barrier shell is also grown on the GaN nanowire cores and micro-photoluminescence is obtained and analyzed for a variety of nanowire dimensions, array pitch spacings, and aperture diameters. By increasing the nanowire pitch spacing on the same growth wafer, the emission wavelength redshifts from 440 to 520 nm, while increasing the aperture diameter results in a ˜35 nm blueshift. The thickness of one QW/barrier period as a function of pitch and aperture diameter is inferred using scanning electron microscopy, with larger pitches showing significantly thicker QWs. Significant increases in indium composition were predicted for larger pitches and smaller aperture diameters. The results are interpreted in terms of local growth conditions and adatom capture radius around the nanowires. This work provides significant insight into the effects of mask configuration and growth conditions on the nanowire properties and is applicable to the engineering of monolithic multi-color nanowire LEDs on a single chip.

Multi-terminal Two-color ZnCdSe/ZnCdMgSe Based Quantum-well Infrared Photodetector

NASA Astrophysics Data System (ADS)

Kaya, Yasin; Ravikumar, Arvind; Chen, Guopeng; Tamargo, Maria C.; Shen, Aidong; Gmachl, Claire

Target recognition and identification applications benefits from two-color infrared (IR) detectors in the mid and long-wavelength IR regions. Currently, InGaAs/AlGaAs and GaAs/AlGaAs multiple quantum wells (QWs) grown on GaAs substrate are the most commonly used two-color QW IR photodetectors (QWIPs). However, the lattice-mismatch and the buildup of strain limit the number of QWs that can be grown, in turn increasing the dark current noise, and limiting the device detectivity.In this work, we report on two-color QWIPs based on the large conduction band offset (~1.12ev) ZnCdSe/ZnCdMgSe material system lattice matched to InP. QWIPs were designed based on a bound to quasi-bound transition, centered at 4 μm and 7 μm and each QW is repeated 50 times to eliminate the high dark current and a contact layer is inserted between the two stacks of QWs for independent electrical contacts. Wafers are processed into two step rectangular mesas by lithography and wet etching. Experiments showed absorption spectra centered at 4.9 μm and 7.6 μm at 80 K and the full width at half maximums were Δλ / λ = 21 % and Δλ / λ = 23 % , respectively. Current work studies the Johnson and the background noise limited detectivities of these QWIPs. Current address: School of Earth, Energy and Environmental Sciences, Stanford, CA 94305, USA.

Magneto-transport study of quantum phases in wide GaAs quantum wells

NASA Astrophysics Data System (ADS)

Liu, Yang

In this thesis we study several quantum phases in very high quality two-dimensional electron systems (2DESs) confined to GaAs single wide quantum wells (QWs). In these systems typically two electric subbands are occupied. By controlling the electron density as well as the QW symmetry, we can fine tune the cyclotron and subband separation energies, so that Landau levels (LLs) belonging to different subbands cross at the Fermi energy EF. The additional subband degree of freedom enables us to study different quantum phases. Magneto-transport measurements at fixed electron density n and various QW symmetries reveal a remarkable pattern for the appearance and disappearance of fractional quantum Hall (FQH) states at LL filling factors nu = 10/3, 11/3, 13/3, 14/3, 16/3, and 17/3. These q/3 states are stable and strong as long as EF lies in a ground-state (N = 0) LL, regardless of whether that level belongs to the symmetric or the anti-symmetric subband. We also observe subtle and distinct evolutions near filling factors nu = 5/2 and 7/2, as we change the density n, or the symmetry of the charge distribution. The even-denominator FQH states are observed at nu = 5/2, 7/2, 9/2 and 11/2 when EF lies in the N= 1 LLs of the symmetric subband (the S1 levels). As we increase n, the nu = 5/2 FQH state suddenly disappears and turns into a compressible state once EF moves to the spin-up, N = 0, anti-symmetric LL (the A0 ↑ level). The sharpness of this disappearance suggests a first-order transition from a FQH to a compressible state. Moreover, thanks to the renormalization of the susbband energy separation in a well with asymmetric change distribution, two LLs can get pinned to each other when they are crossing at E F. We observe a remarkable consequence of such pinning: There is a developing FQH state when the LL filling factor of the symmetric subband nuS equals 5/2 while the antisymmetric subband has filling 1 < nuA <2. Next, we study the evolution of the nu=5/2 and 7/2 FQH states as we add a parallel magnetic field, B||, in the plane of the sample. The first-order transitions at nu = 5/2 and 7/2 are softened when B|| is applied, thanks to the mixing of the LLs from different subbands. Meanwhile, a small B|| also introduces a severe transport anisotropy at nu = 5/2 while the FQH state still remains reasonably strong. Several other novel phenomena are also observed in wide QWs. In high (N ≥ 2) LLs, our study reveals an unexpected rotation of the orientation of the stripe phase observed at a half-filled LL. This rotation is sensitive to the spin of the LL and the symmetry of the charge distribution in the QW. In the lowest LL, we observe a close competition between electron liquid and solid phases near filling factor nu = 1. In perticular, we observe a reentrant nu = 1 integer quantum Hall effect which signals the formation of a Wigner crystal state.

Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.

PubMed

Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev

2016-06-27

We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer, the strong light confinement results in light-matter coupling strength of ℏΩ = 13.7 meV. Assuming an exciton density per QW of (15aB)^-2, well below the saturation density, in a 2-D box-trap with a side length of 10 to 500 µm, we predict thermal equilibrium Bose-Einstein condensation well above room temperature.

Snohomish Estuary Wetlands Study Volume III. Classification and Mapping

DTIC Science & Technology

1978-07-01

Marine plant communities form the basis for some of the most complex i food webs known to man. Because of their complexity any destruction of these plant... NCV ) Ř fv;1 4 CV r% . coI * ".444 Ř m- 0mf n4 ~ ’ oC- . -4c C4 C CJL t o% P o I-""C4enc n S qw qt "* *n *nL P o% 0zwk oU a "C-4 2 C" Iv3gMNIV~ I.z -I

Two dimensional topological insulator in quantizing magnetic fields

NASA Astrophysics Data System (ADS)

Olshanetsky, E. B.; Kvon, Z. D.; Gusev, G. M.; Mikhailov, N. N.; Dvoretsky, S. A.

2018-05-01

The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a metal-insulator transition at B ≈ 6 T. On the whole the experimental data agrees with the theory according to which the helical edge states transport in a 2D TI persists from zero up to a critical magnetic field Bc after which a gap opens up in the 2D TI spectrum.

Growth of GaN- and ZnO-Based Nanorod Compound Structures

DTIC Science & Technology

2013-08-16

parallel with or forming a 60o tilted angle with respect to the two parallel lateral sides of individual NRs. In the edge-to-edge pattern, the shortest...kV and a probe forming lens of Cs = 1.2 mm. 3. SEM and TEM Observations Figures 2(a)-2(f) show the plan-view SEM images of samples I-VI... angle annular dark field (HAADF) image in TEM observation of an InGaN/GaN QW NR of sample I. In this image, the three almost vertical bright lines

Summary Report of the Defense Sciences Research Council Summer Conference Held in La Jolla, California on July 6 - 31, 1992.

DTIC Science & Technology

1992-07-01

environments of high temperature or high electrical background noise . The sensitivity or speed of the sensor may not be adequate. The sensor signal may be...hard to interpret, or to deconvolve from background noise . These are all issues that must be addressed; however, at the present, there is still much...WAVELENGTH 3 (4 AND 8-101gM) QWIP DETECTOR I I i QW #2 WAFER MOW #1 Substrate THREE TERMINAL DEVICE I UNEAR RRA /Output Device #2Output Device #1 Sp

Calculation of Beach Change Under Interacting Cross-Shore and Longshore Processes

DTIC Science & Technology

2010-01-01

the dune toe , berm width, and shoreline position are calculated, while maintaining longshore transport rates representative of the regional long-term...during growth together with the dune shape, the seaward movement of the dune toe ΔyDw for a given increase in dune volume ΔVDw is: ΔyDw = ΔVDw DD ð2Þ...Expressing Eq. (1) in terms of dune toe advance yields: dyDw dt = qw DD ð3Þ It is assumed that sand transport to the dune is related to thewidth of the

Temperature shift of intraband absorption peak in tunnel-coupled QW structure

NASA Astrophysics Data System (ADS)

Akimov, V.; Firsov, D. A.; Duque, C. A.; Tulupenko, V.; Balagula, R. M.; Vinnichenko, M. Ya.; Vorobjev, L. E.

2017-04-01

An experimental study of the intersubband light absorption by the 100-period GaAs/Al0.25Ga0.75As double quantum well heterostructure doped with silicon is reported and interpreted. Small temperature redshift of the 1-3 intersubband absorption peak is detected. Numerical calculations of the absorption coefficient including self-consistent Hartree calculations of the bottom of the conduction band show good agreement with the observed phenomena. The temperature dependence of energy gap of the material and the depolarization shift should be accounted for to explain the shift.

Quantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells

NASA Astrophysics Data System (ADS)

Sarcan, F.; Nutku, F.; Donmez, O.; Kuruoglu, F.; Mutlu, S.; Erol, A.; Yildirim, S.; Arikan, M. C.

2015-08-01

We have performed magnetoresistance measurements on n- and p-type modulation doped GaInNAs/GaAs quantum well (QW) structures in both the weak (B  < 0.08 T) and the high magnetic field (up to 18 T) at 75 mK and 6 K. We observe that the quantum oscillations in {ρxx} and quantum Hall effect (QHE) plateaus in {ρxy} are affected from the presence of the nitrogen in the III-V lattice. The enhancement of N-related scatterings and electron effective mass with increasing nitrogen causes lower electron mobility and higher two-dimensional (2D) electron density, leading to suppressed QHE plateaus in {ρxy} up to 7 T at 6 K. The Shubnikov de Haas (SdH) oscillations develop at lower magnetic fields for higher mobility samples at 6 K and the amplitude of SdH oscillations decreases with increasing nitrogen composition. The well-pronounced QHE plateaus are observed at 75 mK and at higher magnetic fields up to 18 T, for the p-type sample. For n-type samples, the observed anomalies in the characteristic of QHE is attributed the nitrogen-related disorders and overlapping of fluctuating Landau levels. The low magnetic field measurements at 75 mK reveal that the n-type samples exhibit weak antilocalization, whereas weak localization is observed for the p-type sample. The observation of weak antilocalization is an indication of strong electron spin-orbit interactions. The low field magnetoresistance traces are used to extract the spin coherence, phase coherence and elastic scattering times as well Rashba parameters and spin-splitting energy. The calculated Rashba parameters for nitrogen containing samples reveal that the nitrogen composition is a significant parameter to determine the degree of the spin-orbit interactions. Consequently, GaInNAs-based QW structures with various nitrogen compositions can be beneficial to adjust the spin-orbit coupling strength and may be used as a candidate for spintronics applications.

Prediction of thyroid C-cell carcinogenicity after chronic administration of GLP1-R agonists in rodents

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brink, Willem van den; Emerenciana, Annette

Increased incidence of C-cell carcinogenicity has been observed for glucagon-like-protein-1 receptor (GLP-1r) agonists in rodents. It is suggested that the duration of exposure is an indicator of carcinogenic potential in rodents of the different products on the market. Furthermore, the role of GLP-1-related mechanisms in the induction of C-cell carcinogenicity has gained increased attention by regulatory agencies. This study proposes an integrative pharmacokinetic/pharmacodynamic (PKPD) framework to identify explanatory factors and characterize differences in carcinogenic potential of the GLP-1r agonist products. PK models for four products (exenatide QW (once weekly), exenatide BID (twice daily), liraglutide and lixisenatide) were developed using nonlinearmore » mixed effects modelling. Predicted exposure was subsequently linked to GLP-1r stimulation using in vitro GLP-1r potency data. A logistic regression model was then applied to exenatide QW and liraglutide data to assess the relationship between GLP-1r stimulation and thyroid C-cell hyperplasia incidence as pre-neoplastic predictor of a carcinogenic response. The model showed a significant association between predicted GLP-1r stimulation and C-cell hyperplasia after 2 years of treatment. The predictive performance of the model was evaluated using lixisenatide, for which hyperplasia data were accurately described during the validation step. The use of a model-based approach provided insight into the relationship between C-cell hyperplasia and GLP-1r stimulation for all four products, which is not possible with traditional data analysis methods. It can be concluded that both pharmacokinetics (exposure) and pharmacodynamics (potency for GLP-1r) factors determine C-cell hyperplasia incidence in rodents. Our work highlights the pharmacological basis for GLP-1r agonist-induced C-cell carcinogenicity. The concept is promising for application to other drug classes. - Highlights: • An integrative PKPD model is applied to study GLP-1r agonist carcinogenicity. • C-cell carcinogenicity is impacted by both pharmacokinetics and pharmacodynamics. • The relation of GLP-1r stimulation and C-cell hyperplasia appears drug-independent. • Understanding carcinogenic risk needs a pharmacological basis.« less

Review of terahertz semiconductor sources

NASA Astrophysics Data System (ADS)

Wei, Feng

2012-03-01

Terahertz (THz) technology can be used in information science, biology, medicine, astronomy, and environmental science. THz sources are the key devices in THz applications. The author gives a brief review of THz semiconductor sources, such as GaAs1-xNx Gunn-like diodes, quantum wells (QWs) negative-effective-mass (NEM) THz oscillators, and the THz quantum cascade lasers (QCLs). THz current self-oscillation in doped GaAs1-xNx diodes driven by a DC electric field was investigated. The current self-oscillation is associated with the negative differential velocity effect in the highly nonparabolic conduction band of this unique material system. The current self-oscillations and spatiotemporal current patterns in QW NEM p+pp+ diodes was studied by considering scattering contributions from impurities, acoustic phonons, and optic phonons. It is indicated that both the applied bias and the doping concentration strongly influence the patterns and self-oscillating frequencies. The NEM p+pp+ diode may be used as an electrically tunable THz source. Meanwhile, by using the Monte Carlo method, the device parameters of resonant-phonon THz QCLs were optimized. The results show that the calculated gain is more sensitive to the injection barrier width, the doping concentration, and the phonon extraction level separation, which is consistent with the experiments.

Structural, electrical and optical characterization of high brightness phosphor-free white light emitting diodes

NASA Astrophysics Data System (ADS)

Omiya, Hiromasa

Much interest currently exists in GaN and related materials for applications such as light-emitting devices operating in the amber to ultraviolet range. Solid-state lighting (SSL) using these materials is widely being investigated worldwide, especially due to their high-energy efficiency and its impact on environmental issues. A new approach for solid-state lighting uses phosphor-free white light emitting diodes (LEDs) that consist of blue, green, and red quantum wells (QW), all in a single device. This approach leads to improved color rendering, and directionality, compared to the conventional white LEDs that use yellow phosphor on blue or ultraviolet emitters. Improving the brightness of these phosphor-free white LEDs should enhance and accelerate the development of SSL technology. The main objective of the research reported in this dissertation is to provide a comprehensive understanding of the nature of the multiple quantum wells used in phosphor-free white LEDs. This dissertation starts with an introduction to lighting history, the fundamental concepts of nitride semiconductors, and the evolution of LED technology. Two important challenges in LED technology today are metal-semiconductor contacts and internal piezoelectric fields present in quantum well structures. Thus, the main portion of this dissertation consists of three parts dealing with metal-semiconductor interfaces, single quantum well structures, and multiple quantum well devices. Gold-nickel alloys are widely used as contacts to the p-region of LEDs. We have performed a detailed study for its evolution under standard annealing steps. The atomic arrangement of gold at its interface with GaN gives a clear explanation for the improved ohmic contact performance. We next focus on the nature of InGaN QWs. The dynamic response of the QWs was studied with electron holography and time-resolved cathodoluminescence. Establishing the correlation between energy band structure and the light emission spectra elucidated the nature of light emission. Finally, we studied a more complex device, consisting of two red, one green, and two blue emitting quantum wells. A correlation between structural, electrical and optical measurements allows us to understand the dynamic performance of this device. The collective results of this dissertation lead to an improved understanding of the performance of high-brightness, phosphor-free, white LEDs.

Phase 1 trial of the oral AKT inhibitor MK-2206 plus carboplatin/paclitaxel, docetaxel, or erlotinib in patients with advanced solid tumors

PubMed Central

2014-01-01

Background Inhibition of AKT with MK-2206 has demonstrated synergism with anticancer agents. This phase 1 study assessed the MTD, DLTs, PK, and efficacy of MK-2206 in combination with cytotoxic and targeted therapies. Methods Advanced solid tumor patients received oral MK-2206 45 or 60 mg (QOD) with either carboplatin (AUC 6.0) and paclitaxel 200 mg/m2 (arm 1), docetaxel 75 mg/m2 (arm 2), or erlotinib 100 or 150 mg daily (arm 3); alternative schedules of MK-2206 135-200 mg QW or 90-250 mg Q3W were also tested. Results MTD of MK-2206 (N = 72) was 45 mg QOD or 200 mg Q3W (arm 1); MAD was 200 mg Q3W (arm 2) and 135 mg QW (arm 3). DLTs included skin rash (arms 1, 3), febrile neutropenia (QOD, arms 1, 2), tinnitus (Q3W, arm 2), and stomatitis (QOD, arm 3). Common drug-related toxicities included fatigue (68%), nausea (49%), and rash (47%). Two patients with squamous cell carcinoma of the head and neck (arm 1; Q3W) demonstrated a complete and partial response (PR); additional PRs were observed in patients (1 each) with melanoma, endometrial, neuroendocrine prostate, NSCLC, and cervical cancers. Six patients had stable disease ≥6 months. Conclusion MK-2206 plus carboplatin and paclitaxel, docetaxel, or erlotinib was well-tolerated, with early evidence of antitumor activity. Trial registration ClinicalTrials.gov: NCT00848718. PMID:24387695

Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Z. L., E-mail: zhilaifang@hotmail.com; Li, Q. F.; Shen, X. Y.

2014-01-28

Energy band engineering by indium pretreatment of the bottom GaN barriers and control of the growth temperature profile for the InGaN active layers were employed to improve the green-yellow emitting InGaN/GaN quantum well (QW). The modified InGaN/GaN QWs were investigated by various characterization techniques and demonstrated to be of good interface abruptness and well-defined indium concentration profile, composed of 0.52 nm In{sub 0.35}Ga{sub 0.65}N “wetting layer,” 1.56 nm In{sub 0.35-0.22}Ga{sub 0.65-0.78}N graded layers, and 1.56 nm In{sub 0.22}Ga{sub 0.78}N layer along the growth direction. Broad-band dual-wavelength green-yellow emission at about 497 and 568 nm was observed and attributed to the major contribution of enhancedmore » interband transitions from the first and second quantized electron states “e1” and “e2” to the first quantized hole state “h1.” With the modified QW structure, electron overflow loss would be suppressed by filling of the excited electron state with electrons at high carrier injection density and reduction in polarization-induced band bending. APSYS simulation shows efficiency and droop improvements due to the enhanced overlapping of electron and hole wave functions inside the modified InGaN active layers, and the enhanced interband transitions involving the excited electron state.« less

Search for massive resonances in dijet systems containing jets tagged as W or Z boson decays in pp collisions at $$ \\sqrt{s} $$ = 8 TeV

DOE PAGES

Khachatryan, Vardan

2014-08-29

Our search is reported for massive resonances decaying into a quark and a vector boson (W or Z), or two vector bosons (WW, WZ, or ZZ). The analysis is performed on an inclusive sample of multijet events corresponding to an integrated luminosity of 19.7 fb -1, collected in proton-proton collisions at a centre-of-mass energy of 8 TeV with the CMS detector at the LHC. We found that the search uses novel jet-substructure identification techniques that provide sensitivity to the presence of highly boosted vector bosons decaying into a pair of quarks. Exclusion limits are set at a confidence level ofmore » 95% on the production of: (i) excited quark resonances q*decaying to qW and qZ for masses less than 3.2 TeV and 2.9 TeV, respectively, (ii) a Randall-Sundrum graviton GRS decaying into WW for masses below 1.2 TeV, and (iii) a heavy partner of the W boson W' decaying into WZ for masses less than 1.7 TeV. For the first time mass limits are set on W' → WZ and G RS → WW in the all-jets final state. The mass limits on q* → qW, q* → qZ, W' → WZ, G RS → WW are the most stringent to date. A model with a “bulk” graviton G bulk that decays into WW or ZZ bosons is also studied.« less

Department of the Navy Fiscal Year (FY) 2000/2001 Biennial Budget Estimates, Justification of Estimates, February 1999 Research, Development, Test & Evaluation, Navy Budget Activity 5.

DTIC Science & Technology

1999-02-01

jjAi id ß g§s(ö rH^^-H ■J a) wm 4J ft & ü o o P .y rHrH id CDrH (D 0, > id 01 _Ö <D pQw > a oi rr) OCD lj 01a id *^r5 CD ft...Old cu-O § d id u cu •H u d co P P CD 3 M Ol O rH -H (D &CÜH43P CD 5H d CtJ d CDrH CU O PrH P ■O CO d-H CD d U-H s ^ Id CD QH...H P CN CD P P I -H <D drH EH M43 CDrH H O P-H 10 CD S-0 >iP PS drH g IdrH > CD CD Id Ol Ä4JJJ3S P 01 CU C0-H >ld"H Ol

Minutes of the HUSKY PUP Prefielding Instrumentation Meeting Held on 28- 29 April 1975 at Kirtland AFB, New Mexico

DTIC Science & Technology

1976-02-26

D£? E ;-:: E NUCLEAR ( y AGENCY „ v—TECHNICAL LIBRARY GU^ 28-29 APRIL 1975 DEFENSE NUCLEAR AGENCY TEST DIRECTORATE KIRTLAND AFB, NEW...HENRY J. THAYER ’^LTC, USA CHIEF, ENGINEERING BRANCH Q\\W\\0N ^ e .-igi«3 /^A i,nmiiJiiJMii y M MU«umwjm$iBKv^^ ■■. DISTRIBUTION: Director, Defense...ATTN: Mr. E . Sumner, Mr. T. Maguire, Mr. F. Moyer, Dept. 85-85, Bldg. 10?, P.O. Box 50^, Sunnyvale, CA 9^088 Lockheed Missiles and Space Company, ATTN

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

NASA Astrophysics Data System (ADS)

Titkov, Ilya E.; Yadav, Amit; Zerova, Vera L.; Zulonas, Modestas; Tsatsulnikov, Andrey F.; Lundin, Wsevolod V.; Sakharov, Alexey V.; Rafailov, Edik U.

2014-03-01

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

Temperature Dependence of Photoluminescence in InGaAs/InP Strained MQW Heterostructures

NASA Technical Reports Server (NTRS)

Raisky, O. Y.; Wang, W. B.; Alfano, R. R.; Reynolds, C. L., Jr.; Swaminathan, V.

1996-01-01

Multiple quantum well (MQW) InGaAsP/InP heterostructure systems have been drawn considerable research interest in recent years due to its suitability for long wavelength optoelectronic devices. The performance of such devices is strongly affected by peculiarities of recombination processes in the quantum wells (QW). The goal of this study was to investigate the effect of barrier width on the radiative recombination of carriers. In our study, the photoluminescence spectra from InGaAsP/lnP MQW double heterostructures have been measured in the 77-290 K temperature range with different excitation intensities.

Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

NASA Astrophysics Data System (ADS)

Usman, Muhammad; Saba, Kiran; Han, Dong-Pyo; Muhammad, Nazeer

2018-01-01

High efficiency of green GaAlInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of ∼510 nm. By introducing quaternary quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL) in a single structure, an efficiency droop reduction of up to 29% has been achieved in comparison to the conventional GaN-based LED. The proposed structure has significantly reduced electrostatic field in the active region. As a result, carrier leakage has been minimized and spontaneous emission rate has been doubled.

Scattering, Adsorption, and Langmuir-Hinshelwood Desorption Models for Physisorptive and Chemisorptive Gas-Surface Systems

DTIC Science & Technology

2013-09-01

respectively, and ΦQw is the reflected flux of Q at complete accommodation. Typical properties of Q are tangential momentum mct , normal mo- mentum mcn, and...that σt ≡ mct −mc′t mct −mcw = ct − c′t ct , (9) 23 where c′t is the post-collisional tangential speed, and cw is the speed of the wall, which in this...was measured within an experimental error of ±0.02, and the coverage θ noise level was about 0.01 ML. 35 MKS simulations are compared with data in

United States - Japan Seminar on Quantum Mechanical Aspects of Quantum Electronics Held in Monterey, California on 21-24 July 1987,

DTIC Science & Technology

1987-10-01

motivations for the work are listed in slide 2. In particular, note that efforts to achieve Bose condensation in spin polarized hydrogen have been...10-11 GGQW -50 meV 4.8 x 10-13 1.9 x100 -35 meV 2.6 x 10-12 1.0 x 10-9 cf. QW (L.zW/ooA) AAp x*i4!er. Eou- loK ev~t X"’~7xiO"tesui S7 PS4 ~fd a 10 O

Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes

NASA Astrophysics Data System (ADS)

Sadat Mohajerani, Matin; Müller, Marcus; Hartmann, Jana; Zhou, Hao; Wehmann, Hergo-H.; Veit, Peter; Bertram, Frank; Christen, Jürgen; Waag, Andreas

2016-05-01

Three-dimensional (3D) InGaN/GaN quantum-well (QW) core-shell light emitting diodes (LEDs) are a promising candidate for the future solid state lighting. In this contribution, we study direct correlations of structural and optical properties of the core-shell LEDs using highly spatially-resolved cathodoluminescence spectroscopy (CL) in combination with scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM). Temperature-dependent resonant photoluminescence (PL) spectroscopy has been performed to understand recombination mechanisms and to estimate the internal quantum efficiency (IQE).

Ya??tmín Cqw?lqwilt Nixw, Ul Nixw, Ul Nixw, "I Need to Speak More, and More, and More": Okanagan-Colville (Interior Salish) Indigenous Second-Language Learners Share Our Filmed Narratives

ERIC Educational Resources Information Center

Johnson, Michele K.

2014-01-01

way', iskwíst, "my name is", S?ímla?xw, and I am from Penticton BC, Canada. kn sqilxw. I am a Syilx (Okanagan, Interior Salish) adult language learner. My cohort and I are midway in our language transformation to become proficient speakers. Our names are Prasát, S?ímla?xw, C'?r?tups, X?wnámx?wnam, Sta?qwálqs, and our Elder, S?amtíc'a?.…

Solar harvesting by a heterostructured cell with built-in variable width quantum wells

NASA Astrophysics Data System (ADS)

Brooks, W.; Wang, H.; Mil'shtein, S.

2018-02-01

We propose cascaded heterostructured p-i-n solar cells, where inside of the i-region is a set of Quantum Wells (QWs) with variable thicknesses to enhance absorption of different photonic energies and provide quick relaxation for high energy carriers. Our p-i-n heterostructure carries top p-type and bottom n-type 11.3 Å thick AlAs layers, which are doped by acceptors and donor densities up to 1019/cm3. The intrinsic region is divided into 10 segments where each segment carries ten QWs of the same width and the width of the QWs in each subsequent segment gradually increases. The top segment consists of 10 QWs with widths of 56.5Å, followed by a segment with 10 wider QWs with widths of 84.75Å, followed by increasing QW widths until the last segment has 10 QWs with widths of 565Å, bringing the total number of QWs to 100. The QW wall height is controlled by alternating AlAs and GaAs layers, where the AlAs layers are all 11.3Å thick, throughout the entire intrinsic region. Configuration of variable width QWs prescribes sets of energy levels which are suitable for absorption of a wide range of photon energies and will dissipate high electron-hole energies rapidly, reducing the heat load on the solar cell. We expect that the heating of the solar cell will be reduced by 8-11%, enhancing efficiency. The efficiency of the designed solar cell is 43.71%, the Fill Factor is 0.86, the density of short circuit current (ISC) will not exceed 338 A/m2 and the open circuit voltage (VOC) is 1.51V.

Novel mid-infrared silicon/germanium detector concepts

NASA Astrophysics Data System (ADS)

Presting, Hartmut; Konle, Johannes; Hepp, Markus; Kibbel, Horst; Thonke, Klaus; Sauer, Rolf; Corbin, Elizabeth A.; Jaros, Milan

2000-10-01

Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures are grown by molecular beam epitaxy on double-sided polished (100)Si substrates for mid-IR (3 to 5 micrometers and 8 to 12 micrometers ) detection. The samples are characterized by secondary ion mass spectroscopy, x-ray diffraction, and absorption measurements. Single mesa detectors are fabricated as well as large-area focal plane arrays with 256 X 256 pixels using standard Si integrated processing techniques. The detectors, based on heterointernal photo-emission (HIP) of photogenerated holes from a heavily p-doped (p++ approximately 5 X 1020 cm-3) SiGe QW into an undoped silicon layer, operate at 77 K. Various novel designs of the SiGe HIP's such as Ge- and B-grading, double- and multi-wells, are realized; in addition, thin doping setback layers between the highly doped well and the undoped Si layer are introduced. The temperature dependence of dark currents and photocurrents are measured up to 225 K. In general, we observe broad photoresponse curves with peak external quantum efficiencies, up to (eta) ext approximately 0.5% at 77 K and 4(mu) , detectivities up to 8 X 1011 cm(root)Hz/W are obtained. We demonstrate that by varying the thickness, Ge content, and doping level of the single- and the multi-QWs of SiGe HIP detectors, the photoresponse peak and the cutoff of the spectrum can be tuned over a wide wavelength range. The epitaxial versatility of the Si/SiGe system enables a tailoring of the photoresponse spectrum which demonstrates the advantages of the SiGe system in comparison over commercially used silicide detectors.

Electron-phonon heat exchange in quasi-two-dimensional nanolayers

NASA Astrophysics Data System (ADS)

Anghel, Dragos-Victor; Cojocaru, Sergiu

2017-12-01

We study the heat power P transferred between electrons and phonons in thin metallic films deposited on free-standing dielectric membranes. The temperature range is typically below 1 K, such that the wavelengths of the excited phonon modes in the system is large enough so that the picture of a quasi-two-dimensional phonon gas is applicable. Moreover, due to the quantization of the components of the electron wavevectors perpendicular to the metal film's surface, the electrons spectrum forms also quasi two-dimensional sub-bands, as in a quantum well (QW). We describe in detail the contribution to the electron-phonon energy exchange of different electron scattering channels, as well as of different types of phonon modes. We find that heat flux oscillates strongly with thickness of the film d while having a much smoother variation with temperature (Te for the electrons temperature and Tph for the phonons temperature), so that one obtains a ridge-like landscape in the two coordinates, (d, Te) or (d, Tph), with crests and valleys aligned roughly parallel to the temperature axis. For the valley regions we find P ∝ Te3.5 - Tph3.5. From valley to crest, P increases by more than one order of magnitude and on the crests P cannot be represented by a simple power law. The strong dependence of P on d is indicative of the formation of the QW state and can be useful in controlling the heat transfer between electrons and crystal lattice in nano-electronic devices. Nevertheless, due to the small value of the Fermi wavelength in metals, the surface imperfections of the metallic films can reduce the magnitude of the oscillations of P vs. d, so this effect might be easier to observe experimentally in doped semiconductors.

ZnO-based semiconductors with tunable band gap for solar sell applications

NASA Astrophysics Data System (ADS)

Itagaki, N.; Matsushima, K.; Yamashita, D.; Seo, H.; Koga, K.; Shiratani, M.

2014-03-01

In this study, we discuss the potential advantages of a new ZnO-based semiconductor, ZnInON (ZION), for application in multi quantum-well (MQW) photovoltaics. ZION is a pseudo-binary alloy of ZnO and InN, which has direct and tunable band gaps over the entire visible spectrum. It was found from simulation results that owing to the large piezoelectric constant, the spatial overlap of the electron and hole wave functions in the QWs is significantly small on the order of 10-2, where the strong piezoelectric field enhances the separation of photo generated carriers. As a result, ZION QWs have low carrier recombination rate of 1014-1018 cm-3s-1, which is much lower than that in conventional QWs such as InGaAs/GaAs QW (1019 cm-3s-1) and InGaN/GaN QW (1018-1018 cm-3s-1). The long carrier life time in ZION QWs (˜1μs) should enable the extraction of photo-generated carriers from well layers before the recombination, and thus increase Voc and Jsc. These simulation results are consistent with our experimental data showing that both Voc and Jsc of a p-i-n solar cell with strained ZION MQWs and thus the efficiency were increased by the superimposition of laser light with lower photon energy than the band gap energy of the QWs. Since the laser light contributed not to carrier generation but to the carrier extraction from the QWs, and no increase in Voc and Jsc was observed for relaxed ZION MQWs, the improvement in the efficiency was attributed to the long carrier lifetime in the strained ZION QWs.

Direct observation of a Γ -X energy spectrum transition in narrow AlAs quantum wells

NASA Astrophysics Data System (ADS)

Khisameeva, A. R.; Shchepetilnikov, A. V.; Muravev, V. M.; Gubarev, S. I.; Frolov, D. D.; Nefyodov, Yu. A.; Kukushkin, I. V.; Reichl, C.; Tiemann, L.; Dietsche, W.; Wegscheider, W.

2018-03-01

Spectra of magnetoplasma excitations have been investigated in two-dimensional electron systems in AlAs quantum wells (QWs) of different widths. The magnetoplasma spectrum has been found to change profoundly when the quantum well width becomes thinner than 5.5 nm, indicating a drastic change in the conduction electron energy spectrum. The transformation can be interpreted in terms of transition from the in-plane strongly anisotropic Xx-Xy valley occupation to the out-of-plane isotropic Xz valley in the QW plane. Strong enhancement of the cyclotron effective mass over the band value in narrow AlAs QWs is reported.

Investigation of narrow-band thermal emission from intersubband transitions in quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Zoysa, M.; Hakubi Center, Kyoto University, Yoshida, Kyoto 606-8501; Asano, T.

2015-09-14

We investigate thermal emission from n-doped GaAs/AlGaAs quantum wells (QWs). Emission peaks with Lorentzian shapes (linewidth 11∼19 meV) that reflect transitions between the first and second conduction subbands are observed in the mid-infrared range. It is demonstrated that the emission characteristics can be tuned by modifying the QW parameters. The peak emissivity is increased from 0.3 to 0.9 by modifying the doping density, and the peak wavelength is tuned from 6 to 10 μm by changing the well width. The obtained results are useful for the design of narrow-band thermal emitters.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nippert, Felix, E-mail: felix@physik.tu-berlin.de; Callsen, Gordon; Westerkamp, Steffen

We investigate industrial-grade InGaN/GaN quantum wells (QWs) emitting in the green spectral region under high, resonant pumping conditions. Consequently, an ubiquitous high energy luminescence is observed that we assign to a polarization field Confined Hole Continuum (CHC). Our finding is supported by a unique combination of experimental techniques, including transmission electron microscopy, (time-resolved) photoluminescence under various excitation conditions, and electroluminescence, which confirm an extended out-of-plane localization of the CHC-states. The larger width of this localization volume surpasses the QW thickness, yielding enhanced non-radiative losses due to point defects and interfaces, whereas the energetic proximity to the bulk valence band statesmore » promotes carrier leakage.« less

A Study of the Failure of Joints in Composite Material Fuel Cells Due to Hydraulic Ram Loading

DTIC Science & Technology

1976-06-01

H co PSw Z QW <H W CO 33 PS4 o CO O CM \\ Q> 00 vO m CO CM N ra Figure VI.B.l THICKNESS MODEL 55 it acts upon on the membrane, gives the force to be...ability of the joint to carry the loads created by hydraulic ram loading. It would also make the manufacturing procedure easier, less time consuming , and...70 less expensive. Cutting holes and channels in a composite plate not only alters the behavior and load carrying capa- bility of the plate, but it is

A Framework for Collaborative Quadrotor - Ground Robot Missions

DTIC Science & Technology

2011-12-01

corresponds to the following criteria (117) ( ) ( ) ( )X t AX t BU t  cK ( ) ( )cU t K X t  0 ( )T TJ X QX U RU dt      2 2 1 , 1,2...pattern (wanding process), whose edges have reflectors on the top, within the whole space trying to cover every possible view angle of each of the...BR RS  , where ( ) BS  is a skew symmetric matrix. The term ( )B BS V  is the Coriolis term and can be written as: ( )B B B B qw rv S V V ru

Prediction of Acceleration Hydrodynamic Coefficients for Underwater Vehicles from Geometric Parameters

DTIC Science & Technology

1978-02-01

qw dt 6u 6V 6 d •Tf •Tf-rv + = -Brv - A’rw - C’ru - Mrq - Frr - F’rr - Hrp + H’rp 6 Tf q -1-= Cqw + A’qv + B’qu + Nqr + Fqq - F’qq + Gqp + G’qp...rr H 2 - Cqw - Aqv B’qu - Nqr - F2qq - 1lqP 1 -X L -X. F1 X F2 -G-X u rw qv p rr 2 qq B X B’ -X. =-X M = (Xq) G = -x G -- X.rv w qu.r 1 qp 2 r C=-X C

Arctic Ice Dynamics Joint Experiment 1975-1976. Physical Oceanography Data Report, Salinity, Temperature and Depth Data, Camp Big Bear. Volume IV.

DTIC Science & Technology

1980-02-01

C to~~~ II qo 3 4 .. ..N~ V. ...... .V . .N N . .S ... .V .fI . i 0 Wi . .... . 53 .O .00... 0--N. .. ZZ W. I -. 0 -z J~~D &Z av F - -q qWe at s-a...q .a1 2c z oft ew dw- lp- eE- W - 0- fP- M .. 1 ,1e mc VftWU 00, 0%0 0000 - P-PtftoO. -%ffE Uqvv 4i . qwE ft . 04W -f ewF-0 wa rnm~~t.- tol Uw0 f E0

Contact reflectivity effects on thin p-clad InGaAs single quantum-well lasers

NASA Astrophysics Data System (ADS)

Wu, C. H.; Zory, P. S.; Emanuel, M. A.

1994-12-01

Thin p-clad InGaAs quantum-well (QW) lasers with either Au or Ni as the p-contact metal have been fabricated. Due to reduced contact reflectivity, the Ni contact lasers have significantly higher threshold currents and lower slope efficiencies than the Au contact lasers. In addition, operating wavelength differences greater than 50 nm are observed for cavity lengths between 250 and 700 microns, with large wavelength jumps occurring at shorter and longer cavity lengths. The measured wavelength effects are explained by incorporating the optical mode loss difference between the two laser types into quantum-well laser theory.

Quantum-well-base heterojunction bipolar light-emitting transistor

NASA Astrophysics Data System (ADS)

Feng, M.; Holonyak, N.; Chan, R.

2004-03-01

This letter reports the enhanced radiative recombination realized by incorporating InGaAs quantum wells in the base layer of light-emitting InGaP/GaAs heterojunction bipolar transistors (LETs) operating in the common-emitter configuration. Two 50 Å In1-xGaxAs (x=85%) quantum wells (QWs) acting, in effect, as electron capture centers ("traps") are imbedded in the 300 Å GaAs base layer, thus improving (as a "collector" and recombination center) the light emission intensity compared to a similar LET structure without QWs in the base. Gigahertz operation of the QW LET with simultaneously amplified electrical output and an optical output with signal modulation is demonstrated.

Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD

PubMed Central

2012-01-01

In this paper, five-period InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) were grown by metal organic chemical vapor deposition with 405-nm light beam in situ monitoring system. Based on the signal of 405-nm in situ monitoring system, the related information of growth rate, indium composition and interfacial quality of each InGaN/GaN QW were obtained, and thus, the growth conditions and structural parameters were optimized to grow high-quality InGaN/GaN green LED structure. Finally, a green LED with a wavelength of 509 nm was fabricated under the optimal parameters, which was also proved by ex situ characterization such as high-resolution X-ray diffraction, photoluminescence, and electroluminescence. The results demonstrated that short-wavelength in situ monitoring system was a quick and non-destroyed tool to provide the growth information on InGaN/GaN, which would accelerate the research and development of GaN-based green LEDs. PMID:22650991

Bare Bones: A Method for Estimating Provisioning Budget Requirements in the Outyears

DTIC Science & Technology

1977-07-01

8217 .; ’ ; . ’-COMMON/PART/NSS, BF, U, UP, UPNHA, V( 6), PC 6), TAT( 6), OSTC 6> - COMMON/GENRL/VSUMC 65, PSLWC 6), QW, QIC 6),.Q2C 6), QOLC 6>, QEC 6...COM.-IO^/GEMRL/VSU^C 6), PSIM( 6), Q’ttJj QIC 6), Q2( 6), QOLC 6) ^ QEC 6), DIMENSION RC 6) YR=365. " " • . USLMC 1)=PSUMC 1) = Q=0. DO...10 J=2, JJ ^ . vsiw< J) = VSOMC j-n+u< j) ■ , PSU^C J) = PSUMC J-l ) + PC J) Ql (J)=02C J)= QOLC J)= QEC J) = 0. EO 1 5 J=2, JJ- 1

The Z2/A Dependence in Heavy-Ion Fusion for the Reactions of Chlorine on Thulium, Lutetium, Tantalum and Tungsten.

DTIC Science & Technology

1980-06-01

N NLL 0 0 C~CP (qw ) P /.op -40- individual excitation functions for each evaporation channel. For this study the lower...c’ + a" (alpha particles) =8a + a" (protons) £ £’ + P " (neutrons) C ’’, = 1 or 0 1ŕ,81","," = I or 0 V + V’ - I INDIVIDUAL (a, p or n ) VELOCITY...velocity profile of +10%, 0, -10% of v0 was taken. All angular distributions * - -- - - - - 76- M0 U3 LuL I M (0w DN~ N + 1 tJ < N I $ P ll7 -77-

On the modified active region design of interband cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Motyka, M.; Ryczko, K.; Dyksik, M.

2015-02-28

Type II InAs/GaInSb quantum wells (QWs) grown on GaSb or InAs substrates and designed to be integrated in the active region of interband cascade lasers (ICLs) emitting in the mid infrared have been investigated. Optical spectroscopy, combined with band structure calculations, has been used to probe their electronic properties. A design with multiple InAs QWs has been compared with the more common double W-shaped QW and it has been demonstrated that it allows red shifting the emission wavelength and enhancing the transition oscillator strength. This can be beneficial for the improvements of the ICLs performances, especially when considering their long-wavelengthmore » operation.« less

Evaluation of Drought Management Measures for Municipal and Industrial Water Supply.

DTIC Science & Technology

1983-12-01

10. c -W q-W t41 4.1 ~~>o~v 0t44 04 00 00 0 0 00 0 0 ;, d 0 0 -H 44 . 0 W k E4 $4 414 00 4.4 44I 04 V. 44.010 0 0 u. 0rr.4 40 W1 . 0100 0 w 03w6 0 00...and Drainage Division, ASCE, 97(IR4):559-570. 93. Hoppel, S. K ., and W. Viessman, Jr. 1972. A Linear Analysis of an Urban Water Supply System. Water...from Small Watersheds . Idaho Water • .Resources Research Institute Technical Completion Report, Moscow: Idaho University. *110. Lampe, Les K . 1982

Schemes for efficient QW pumping of AlGaInP disk lasers

NASA Astrophysics Data System (ADS)

Brauch, Uwe; Mateo, Cherry May N.; Kahle, Hermann; Bek, Roman; Jetter, Michael; Abdou Ahmed, Marwan; Michler, Peter; Graf, Thomas

2017-02-01

Keys to high-power operation of disk lasers are a thin active layer, a small Stokes shift and an efficient cooling, best realized with a limited number of QWs which are pumped close to the laser wavelength and which are in close contact with one or two diamond heat sinks. To get sufficient pump absorption many passes of the pump radiation are needed. This can be realized either by taking advantage of intrinsic resonances (designed for the pump radiation) or by an external multi-pass optics (known from Yb disk lasers) or a combination of both. The various options will be discussed and some results for AlGaInP disk lasers will be presented.

Improving Efficiency of III-N Quantum Well Based Optoelectronic Devices through Active Region Design and Growth Techniques

NASA Astrophysics Data System (ADS)

Young, Nathan Garrett

The III-Nitride materials system provides a fascinating platform for developing optoelectronic devices, such as solar cells and LEDs, which have the power to dramatically improve the efficiency of our power consumption and reduce our environmental footprint. Finding ways to make these devices more efficient is key to driving their widespread adoption. This dissertation focuses on the intersection of challenges in physics and metalorganic chemical vapor deposition (MOCVD) growth at the nanoscale when designing for device efficiency. In order to create the best possible InGaN solar cell, a multiple quantum well (MQW) active region design had to be employed to prevent strain relaxation related degradation. There were two competing challenges for MQW active region design and growth. First, it was observed current collection efficiency improved with thinner quantum barriers, which promoted efficient tunneling transport instead of inefficiency thermally activated escape. Second, GaN barriers could planarize surface defects in the MQW region under the right conditions and when grown thick enough. A two-step growth method for thinner quantum barriers was developed that simultaneously allowed for tunneling transport and planarized V-defects. Barriers as thin as 4 nm were employed in MQW active regions with up to 30 periods without structural or electrical degradation, leading to record performance. Application of dielectric optical coatings greatly reduced surface reflections and allowed a second pass of light through the device. This both demonstrated the feasibility of multijunction solar integration and boosted conversion efficiency to record levels for an InGaN solar cell. III-N LEDs have achieved state-of-the-art performance for decades, but still suffer from the phenomena of efficiency droop, where device efficiency drops dramatically at high power operation. Droop is exacerbated by the polarization-induced electric fields in InGaN quantum wells, which originate from a lack of inversion symmetry in GaN's wurtzite crystal structure. These fields can be screened by using highly doped layers, but the extreme dopant densities predicted by simulation for complete screening may require using Ge as an alternative n-type dopant to Si. GaN:Ge layers with excellent electrical characteristics were grown by MOCVD with doping densities exceeding 1020 cm -3. However, their surface morphologies were very poor and they proved a poor screening dopant in LED structures. Using Si as the n-type screening dopant, LEDs with single QW active regions were grown, packaged, and tested. Biased photoluminescence showed strong evidence of complete polarization screening. The LEDs had low droop, but also low peak efficiencies. Possible explanations for trends in efficiency with varying QW width and field screening will be discussed.

Mitigating Structural Defects in Droop-Minimizing InGaN/GaN Quantum Well Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Zhibo; Chesin, Jordan; Singh, Akshay

2016-12-01

Modern commercial InGaN/GaN blue LEDs continue to suffer from efficiency droop, a reduction in efficiency with increasing drive current. External quantum efficiency (EQE) typically peaks at low drive currents (< 10 A cm 2) and drops monotonically at higher current densities, falling to <85% of the peak EQE at a drive current of 100 A cm 2. Mitigating droop-related losses will yield tremendous gains in both luminous efficacy (lumens/W) and cost (lumens/$). Such improvements are critical for continued large-scale market penetration of LED technologies, particularly in high-power and high flux per unit area applications. However, device structures that reduce droopmore » typically require higher indium content and are accompanied by a corresponding degradation in material quality which negates the droop improvement via enhanced Shockley-Read-Hall (SRH) recombination. In this work, we use advanced characterization techniques to identify and classify structural defects in InGaN/GaN quantum well (QW) heterostructures that share features with low-droop designs. Using aberration-corrected scanning transmission electron microscopy (C s-STEM), we find the presence of severe well width fluctuations (WWFs) in a number of low droop device architectures. However, the presence of WWFs does not correlate strongly with external quantum efficiency nor defect densities measured via deep level optical spectroscopy (DLOS). Hence, performance losses in the heterostructures of interest are likely dominated by nanoscale point or interfacial defects rather than large-scale extended defects.« less

INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Polar Mixing Optical Phonon Spectra in Wurtzite GaN Cylindrical Quantum Dots: Quantum Size and Dielectric Effects

NASA Astrophysics Data System (ADS)

Zhang, Li; Liao, Jian-Shang

2010-05-01

The interface-optical-propagating (IO-PR) mixing phonon modes of a quasi-zero-dimensional (QoD) wurtzite cylindrical quantum dot (QD) structure are derived and studied by employing the macroscopic dielectric continuum model. The analytical phonon states of IO-PR mixing modes are given. It is found that there are two types of IO-PR mixing phonon modes, i.e. ρ-IO/z-PR mixing modes and the z-IO/ρ-PR mixing modes existing in QoD wurtzite QDs. And each IO-PR mixing modes also have symmetrical and antisymmetrical forms. Via a standard procedure of field quantization, the Fröhlich Hamiltonians of electron-(IO-PR) mixing phonons interaction are obtained. Numerical calculations on a wurtzite GaN cylindrical QD are performed. The results reveal that both the radial-direction size and the axial-direction size as well as the dielectric matrix have great influence on the dispersive frequencies of the IO-PR mixing phonon modes. The limiting features of dispersive curves of these phonon modes are discussed in depth. The phonon modes “reducing" behavior of wurtzite quantum confined systems has been observed obviously in the structures. Moreover, the degenerating behaviors of the IO-PR mixing phonon modes in wurtzite QoD QDs to the IO modes and PR modes in wurtzite Q2D QW and Q1D QWR systems are analyzed deeply from both of the viewpoints of physics and mathematics.

Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm

NASA Astrophysics Data System (ADS)

Onuma, Takeyoshi; Chichibu, Shigefusa F.; Aoyama, Toyomi; Nakajima, Kiyomi; Ahmet, Parhat; Azuhata, Takashi; Chikyow, Toyohiro; Sota, Takayuki; Nagahama, Shin-ichi; Mukai, Takashi

2003-12-01

Optical and structural properties of an InGaN double-quantum-well (DQW) laser diode (LD) wafer that lased at 450 nm were investigated to discuss an enormous impact of a polarization-induced electric field on the recombination dynamics in InGaN quantum structures. The quantum-well (QW) structure was shown to have the well thickness as thin as approximately 1 nm and InN molar fraction x of approximately 14%. The gross effective electric field in the QW (FQW) was estimated to be 490 kV/cm from the Franz-Keldysh oscillation (FKO) period in the electroreflectance (ER) spectrum, implying that an internal piezoelectric field (Fpiz) of approximately 1.4 MV/cm was cancelled by the pn junction built-in field (Fbi) and Coulomb screening due to carriers in the DQW. The magnitude of FQW can be further weakened by applying reverse bias (VR) on the junction; the decrease in the photoluminescence (PL) lifetime at low temperature measured under VR was explained to be due to a recovery of electron-hole wavefunction overlap for small VR (|VR|<4 V), and due mainly to the tunneling escape of carriers through the barriers for larger VR. By applying an appropriate VR smaller than 4 V, electron-hole wavefunction overlap, which had been separated vertically along the c-axis due to quantum-confined Stark effect, could be partially recovered, and then the time-resolved PL signals exhibited a less-pronounced stretched exponential decay, giving a scaling parameter (β) of 0.85 and effective in-plane localization depth (E0) of 40-50 meV for the spontaneous emission. These values were closer to those of much homogeneous QWs compared to those reported previously for InGaN QWs having similar InN molar fractions. The use of very thin QWs is considered to bring easier Coulomb screening of FQW and population inversion under high excitation conditions.

Quantum Cascade Lasers Modulation and Applications

NASA Astrophysics Data System (ADS)

Luzhansky, Edward

The mid-wave IR (MWIR) spectral band, extending from 3 to 5 microns, is considered to be a low loss atmospheric window. There are several spectral sub-bands with relatively low atmospheric attenuation in this region making it popular for various commercial and military applications. Relatively low thermal and solar background emissions, effective penetration through the natural and anthropogenic obscurants and eye safety add to the long list of advantages of MWIR wavelengths. Quantum Cascade Lasers are compact semiconductor devices capable of operating in MWIR spectrum. They are based on inter-subband transitions in a multiple-quantum-well (QW) hetero-structure, designed by means of band-structure engineering. The inter-subband nature of the optical transition has several key advantages. First, the emission wavelength is primarily a function of the QW thickness. This characteristic allows choosing well-understood and reliable semiconductors for the generation of light in a wavelength range of interest. Second, a cascade process in which tens of photons are generated per injected electron. This cascading process is behind the intrinsic high-power capabilities of QCLs. This dissertation is focused on modulation properties of Quantum Cascade Lasers. Both amplitude and phase/frequency modulations were studied including modulation bandwidth, modulation efficiency and chirp linearity. Research was consisted of the two major parts. In the first part we describe the theory of frequency modulation (FM) response of Distributed Feedback Quantum Cascade Lasers (DFB QCL). It includes cascading effect on the QCL's maximum modulation frequency. The "gain levering" effect for the maximum FM response of the two section QCLs was studied as well. In the second part of research we concentrated on the Pulse Position Amplitude Modulation of a single section QCL. The low complexity, low size, weight and power Mid-Wavelength Infra-Red optical communications transceiver concept is introduced. The concept was realized and tested in the laboratory environment. The resilience to atmospheric impairments are analyzed with simulated turbulence. The performance compared to typical telecom based Short Wavelength Infra-Red transceiver.

Confinement factor, near and far field patterns in InGaN MQW laser diodes

NASA Astrophysics Data System (ADS)

Martín, J.; Sánchez, M.

2005-07-01

In this work the influence of the QW number in the active region on spectral characteristics in InGaN multi quamtun well lasers is analyzed. A comparison between the abrupt index step structure (Step) and a graded-index structure (GRIN) is done. The effect of the introduction of a p-AlxGa1-xN electron blocking layer, placed above the last InGaN barrier in the Step structure is also analyzed. Calculations of the confinement factor, near and far field patterns were carried out. We found that with the adequate aluminum content in this layer, the confinement factor, near and far field patterns are improved, and values similar to those obtained with GRIN structure can be reached.

Optimization of polarization compensating interlayers for InGaN/GaN MQW solar cells

NASA Astrophysics Data System (ADS)

Saini, Basant; Sharma, Sugandha; Kaur, Ravinder; Pal, Suchandan; Kapoor, Avinashi

2018-05-01

Optimization of polarization compensating interlayer (PCI) is performed numerically to improve the photovoltaic properties of InGaN/GaN multiple quantum well solar cell (MQWSC). Simulations are performed to investigate the effect of change in thickness and composition of PCI on the performance of cell. Short circuit current density is increased as we increase the thickness of the PCI. Changing the constitution of PCI not only mitigates the negative effects of polarization-induced electric fields but also reduces the high potential barrier existing at the QW/p-GaN hetero-interface. This claim is validated by the performance shown by the cell containing optimized PCI, as it shows an improved efficiency of 1.54 % under AM1.5G illumination.

Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects

NASA Astrophysics Data System (ADS)

Kaleem, Mohammad; Nazir, Sajid; Saqib, Nazar Abbas

2016-03-01

Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.

The Processing and Mechanical Properties of High Temperature/ High Performance Composites. Processing/Property Correlations. Book 4

DTIC Science & Technology

1994-03-01

Metals Park , Ohio(1088). 42. E.W. Colin s, The Physical Metallurgy of Ti Alloys, pp.111-21-. ASM, Metals Park , Ohio (198 43. C.R. Brooos, Heat...Treatment. Structure and Properties of Nonferrous Alloys, pp.361-376. ASM, Metals Park , Ohio (1982). 44. W.C. Ha-rigan, Jr., Met. Trans. A 5, 565 (1974). 45...CJ 0 c0 CMJ 0 1~~ 00 0; 0D/D ’sseils; eJI~suG LO) C~i 0 Cl E -i E 0z Ln C; 0 DO/D ’SsOJIS teU! WON LO E C 0. 22.0 x In 0o 0)- 00D LO qw)r 0; ; 0 0i 6 0

Prime Contract Awards Over $25,000 by Major System, Contractor and State. Part 2. (BSH-SMR)

DTIC Science & Technology

1989-01-01

tI CI 4) 0 w- - 4~4 C -*. nowO )-4o -040 0 OL*l (M m 100m-1-1v-qmm 00L -t(M- 04-X 4nII W- --4Ww .nw -. 4-.M -- 4WC W-4LA -4 0QW U C W 40Ř 0-* W...L AL 0 0. J 2W -4~ 00 00L37 00 00 0U 00: 0v a0 0 04 0A < ) - 347 =N- -440 C’ ) .rN- . )-4 ~4 -4l C) M - 0 0(I) -IL.I0 Lb f 0UC0 C’ 03 U7-t0U -4N U

A quantum rings based on multiple quantum wells for 1.2-2.8 THz detection

NASA Astrophysics Data System (ADS)

Mobini, Alireza; Solaimani, M.

2018-07-01

In this paper optical properties of a new QR based on MQWs have been investigated for detection in the THz range. The QR composed of a periodic effective quantum sites that each one considered as QW in theta direction. Using Tight binding method, eigen value problem for a QR with circumstance of 100 nm number with different number of wells i.e. 2, 4, 6 and 8 are solved and the absorption spectrum have been calculated. The results show that absorption has maximum value in range of (1.2-2.88 THz) that can be used for THz detection. Finally, it is realized that by increasing the number of wells, the numbers of absorption line also increase.

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niu, Nan, E-mail: nanniu@fas.harvard.edu; Woolf, Alexander; Wang, Danqing

2015-06-08

We report exceptionally low thresholds (9.1 μJ/cm{sup 2}) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

Growth and characterization of (110) InAs quantum well metamorphic heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Podpirka, Adrian A., E-mail: adrian.podpirka.ctr@nrl.navy.mil; Katz, Michael B.; Twigg, Mark E.

An understanding of the growth of (110) quantum wells (QWs) is of great importance to spin systems due to the observed long spin relaxation times. In this article, we report on the metamorphic growth and characterization of high mobility undoped InAs (110) QWs on GaAs (110) substrates. A low-temperature nucleation layer reduces dislocation density, results in tilting of the subsequent buffer layer and increases the electron mobility of the QW structure. The mobility varies widely and systematically (4000–16 000 cm{sup 2}/Vs at room temperature) with deposition temperature and layer thicknesses. Low-temperature transport measurements exhibit Shubnikov de-Haas oscillations and quantized plateaus in themore » quantum Hall regime.« less

Phonon-Mediated Exciton Stark Effect Enhanced by a Static Electric Field

NASA Astrophysics Data System (ADS)

Ivanov, A. L.

1997-03-01

The optical properties of semiconductor QW's change in the presence of coherent pump light. The exciton (phonon-mediated, biexciton-mediated, etc.) optical Stark effect is an effective shift of the exciton level that follow dynamically the intensity I0 ~= 0.1 div 1 GW/cm^2 of the pump light. In the present work we develop a theory of a low-intensity electric-field enhanced phonon-mediated optical Stark effect in polar semiconductors and semiconductor microstructures. The main point is that the exciton - LO-phonon Fröhlich interaction can be strongly enhanced by a (quasi-) static electric field F which polarizes the exciton in the geometry F | k | p, where k and p are the wavevectors of the pump and probe light, respectively. The electric field enhancement of spontaneous Raman scattering has been already analyzed (E. Burstein et al., 1971). Even a moderate electric field F ~= 10^3 V/cm reduces the intensity of the pump light to I0 ~= 1 div 10 MW/cm^2. Moreover, the phonon-mediated Stark effect enhanced by a static electric field F allow us to realize the both red and blue dynamical shifts of the exciton level.

Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

NASA Astrophysics Data System (ADS)

Hartmann, Jana; Steib, Frederik; Zhou, Hao; Ledig, Johannes; Nicolai, Lars; Fündling, Sönke; Schimpke, Tilman; Avramescu, Adrian; Varghese, Tansen; Trampert, Achim; Straßburg, Martin; Lugauer, Hans-Jürgen; Wehmann, Hergo-Heinrich; Waag, Andreas

2017-10-01

GaN fins are 3D architectures elongated in one direction parallel to the substrate surface. They have the geometry of walls with a large height to width ratio as well as small footprints. When appropriate symmetry directions of the GaN buffer are used, the sidewalls are formed by non-polar {1 1 -2 0} planes, making the fins particularly suitable for many device applications like LEDs, FETs, lasers, sensors or waveguides. The influence of growth parameters like temperature, pressure, V/III ratio and total precursor flow on the fin structures is analyzed. Based on these results, a 2-temperature-step-growth was developed, leading to fins with smooth side and top facets, fast vertical growth rates and good homogeneity along their length as well as over different mask patterns. For the core-shell growth of fin LED heterostructures, the 2-temperature-step-growth shows much smoother sidewalls and less crystal defects in the InGaN QW and p-GaN shell compared to structures with cores grown in just one step. Electroluminescence spectra of the 2-temperature-step-grown fin LED are demonstrated.

Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

NASA Astrophysics Data System (ADS)

Nagaiah, Padmaja

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p-channel MOSFETs. Band engineering, strain induced valence band splitting and quantum confinement is used to improve channel hole mobility. Experimental results on the Hall hole mobility is presented for InxGa1-xAs channels with varying In content, thickness of the quantum well and temperature. Then, high mobility InxGa 1-xAs heterostructure thus obtained are integrated with in-situ deposited high-k gate oxide required for high performance p-MOSFET and discuss the challenges associated with the gated structure and draw conclusions on this material system. Antimonide based channel materials such as GaSb and InxGa 1-xSb are explored for III-V based p-MOSFETs in last two chapters. Options for Sb based strained QW channels to obtain maximum hole mobility by varying the strain, channel and barrier material, thickness of the layers etc. is discussed followed by the growth of these Sb channels on GaAs and InP substrates using molecular beam epitaxy. The physical properties of the structures such as the heterostructure quality, alloy content and surface roughness are examined via TEM, XRD and AFM. Following this, electrical measurement results on Hall hole mobility is presented. The effect of strain, alloy content, temperature and thickness on channel mobility and concentration is reported. Development of GaSb n- and p-MOS capacitor structures with in-situ deposited HfO2 gate oxide dielectric using in-situ deposited amorphous Si (a-Si) interface passivation layer (IPL) to improve the interface quality of high-k oxide and (In)GaSb surface is presented. In-situ deposited gate oxides such as Al2O3 and combination oxide of Al 2O3 and HfO2 with and without the a-Si IPL are also explored as alternate gate dielectrics. Subsequently, MOS capacitor structures using buried InGaSb QWs are demonstrated. Development of an inversion type bulk GaSb with implanted source-drain contacts and in-situ deposited gate oxide HfO2 gate oxide is discussed. The merits of biaxial compressive strain is demonstrated on strained surface and buried channel In0.36 Ga0.64Sb QW MOSFETs with thin top barrier and in-situ deposited a-Si IPL and high-k HfO2 as well as combination Al 2O3+HfO2 gate stacks and ex-situ atomic layer deposited (ALD) combination gate oxide and with thin 2 nm InAs surface passivation layer is presented. Finally, summary of the salient results from the different chapters is provided with recommendations for future research.

Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

NASA Astrophysics Data System (ADS)

Tortora, M.; Biasiol, G.; Cautero, G.; Menk, R. H.; Plaisier, J. R.; Antonelli, M.

2017-03-01

In order to improve the characterisation of the delivered beams in many types of photon sources, innovative beam profilers based on III/V semiconductor materials (InGaAs/InAlAs) have been deeply investigated. Owing to a tunable and direct band gap these devices allow radiation detection in a wide spectral range. In order to increase the sensitivity of the device in radiation detection charge amplification on the sensor level is implemented. This is obtained by exploiting In0.75Ga0.25As/In0.75Al0.25As quantum wells (QW) hosting a two-dimensional electron gas (2DEG) through molecular beam epitaxy (MBE). Internal charge-amplification mechanism can be achieved for very low applied voltages, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. This technology has been preliminarily exploited to fabricate prototype beam profilers with a strip geometry (with 50-μm-wide strips). Tests were carried out both with conventional X-ray tubes and at the Elettra synchrotron facility. The results testify how these profilers are capable of reconstructing the shape of the beam, as well as estimating the position of the beam centroid with a precision of about 400 nm. Further measurements with different samples of decreasing thickness have shown how this precision could be further improved by an optimised microfabrication. For this reason a new design, based on a membrane-photodetector, is proposed. Results regarding the spatial resolution as function of the sensor thickness will be presented and discussed.

User’s manual for the National Water Information System of the U.S. Geological Survey: Water-Quality System

USGS Publications Warehouse

Dupré, David H.; Scott, Jonathon C.; Clark, Melanie L.; Canova, Michael G.; Stoker, Yvonne E.

2013-01-01

This user documentation is designed to be a reference for the quality of water (QW) programs within the National Water Information System (NWIS). If you are a new user, the “Introduction” and “Getting Started” sections may be the right place for you to start. If you are an experienced user, you may want to go straight to the details provided in the “Program” section (section 3). Code lists and some miscellaneous reference materials are provided in the Appendices. The last section, “Tip Sheets,” is a collection of suggestions for accomplishing selected tasks, some of which are basic and some are advanced. These tip sheets are referenced in the main text of the documentation where appropriate.

National Program for Inspection of Non-Federal Dams, Black Brook Dam (MA 01057), Connecticut River Basin, Blandford, Massachusetts. Phase I Inspection Report.

DTIC Science & Technology

1980-03-01

conducting the annual inspection. Frank LaBombard Supt. of Water Department, Town of Russell * William Mikuski Chairman, Board of Selectmen - Russell Kevin ...m , -A a.. 5 5’ L’ Or 51.6 6 Or b.. 7 . . .. h . ;w WThs Waer Isnel at hole (1QW1,q fte. 95- Lop of bedrok. F1.. U..2 0. 2. - 01-16 LiT. 1.2.07 3f366...1 Ofto avt l.A. IWI’ * j. )u.nw 3im T 0 oft" !. . - 4- 1* 0 Poo 0..’ is.,.ft 2. 15-23 O AHWT s 1.. waer ei at. 1 belo I.: 7 31... lo00t. 6. 43-47*10

All Prime Contract Awards by State or Country, Place, and Contractor. Part 22 (Aua Amer-Honduras)

DTIC Science & Technology

1990-01-01

5 01 񓡞i 0 La 4. U.444.4 4c 4c 41* UWl dc 4c...4C C. 0 d IL ~a.4 MW 1-1 U be 0 a 00003 0 mU 0 * a I 10.4 CD LL 00 Go G00 40 0000 1-1 qW In 0 40 t&. - 5 -4 -i..t- maoooonon 04.)m -im’ 000o >.a 0 . CV...00 t 2 Q0000000 OaN xa i004 aNO4 5 -1- J-JIJ-J 00 0 00f 0.4c 000000 0 1010CL a41 d-# 1 300000 22 1 00 wa 00000000 02 -9 a 3 4") a~ A -4-4 .4 -4-4 a 0

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lekhal, K.; Damilano, B., E-mail: bd@crhea.cnrs.fr; De Mierry, P.

2015-04-06

Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

Intense laser field effects on a Woods-Saxon potential quantum well

NASA Astrophysics Data System (ADS)

Restrepo, R. L.; Morales, A. L.; Akimov, V.; Tulupenko, V.; Kasapoglu, E.; Ungan, F.; Duque, C. A.

2015-11-01

This paper presents the results of the theoretical study of the effects of non-resonant intense laser field and electric and magnetic fields on the optical properties in an quantum well (QW) make with Woods-Saxon potential profile. The electric field and intense laser field are applied along the growth direction of the Woods-Saxon quantum well and the magnetic field is oriented perpendicularly. To calculate the energy and the wave functions of the electron in the Woods-Saxon quantum well, the effective mass approximation and the method of envelope wave function are used. The confinement in the Woods-Saxon quantum well is changed drastically by the application of intense laser field or either the effect of electric and magnetic fields. The optical properties are calculated using the compact density matrix.

Weak quadrupole moments

NASA Astrophysics Data System (ADS)

Lackenby, B. G. C.; Flambaum, V. V.

2018-07-01

We introduce the weak quadrupole moment (WQM) of nuclei, related to the quadrupole distribution of the weak charge in the nucleus. The WQM produces a tensor weak interaction between the nucleus and electrons and can be observed in atomic and molecular experiments measuring parity nonconservation. The dominating contribution to the weak quadrupole is given by the quadrupole moment of the neutron distribution, therefore, corresponding experiments should allow one to measure the neutron quadrupoles. Using the deformed oscillator model and the Schmidt model we calculate the quadrupole distributions of neutrons, Q n , the WQMs, {Q}W(2), and the Lorentz invariance violating energy shifts in 9Be, 21Ne, 27Al, 131Xe, 133Cs, 151Eu, 153Eu, 163Dy, 167Er, 173Yb, 177Hf, 179Hf, 181Ta, 201Hg and 229Th.

First results from simulations of supersymmetric lattices

NASA Astrophysics Data System (ADS)

Catterall, Simon

2009-01-01

We conduct the first numerical simulations of lattice theories with exact supersymmetry arising from the orbifold constructions of \\cite{Cohen:2003xe,Cohen:2003qw,Kaplan:2005ta}. We consider the Script Q = 4 theory in D = 0,2 dimensions and the Script Q = 16 theory in D = 0,2,4 dimensions. We show that the U(N) theories do not possess vacua which are stable non-perturbatively, but that this problem can be circumvented after truncation to SU(N). We measure the distribution of scalar field eigenvalues, the spectrum of the fermion operator and the phase of the Pfaffian arising after integration over the fermions. We monitor supersymmetry breaking effects by measuring a simple Ward identity. Our results indicate that simulations of Script N = 4 super Yang-Mills may be achievable in the near future.

A restricted parabrachial pontine region is active during non-REM sleep

PubMed Central

Torterolo, Pablo; Sampogna, Sharon; Chase, Michael H.

2011-01-01

The principal site that generates both REM sleep and wakefulness is located in the mesopontine reticular formation, whereas non-REM sleep (NREM) is primarily dependent upon the functioning of neurons that are located in the preoptic region of the hypothalamus. In the present study, we were interested in determining whether the occurrence of NREM might also depend on the activity of mesopontine structures, as has been shown for wakefulness and REM sleep. Adult cats were maintained in one of the following states: quiet wakefulness (QW), alert wakefulness (AW), NREM, or REM sleep induced by microinjections of carbachol into the nucleus pontis oralis (REM-carbachol). Subsequently, they were euthanized and single labeling immunohistochemical studies were undertaken to determine state-dependent patterns of neuronal activity in the brainstem based upon the expression of the protein Fos. In addition, double labeling immunohistochemical studies were carried out to detect neurons that expressed Fos as well as choline acetyltransferase, tyrosine hydroxylase or GABA. During NREM, only a few Fos immunoreactive cells were present in different regions of the brainstem; however, a discrete cluster of Fos+ neurons was observed in the caudolateral peribrachial region (CLPB). The number of the Fos+ neurons in the CLPB during NREM was significantly greater (67.9 ± 10.9, P < 0.0001) compared to QW (8.0 ± 6.7), AW (5.2 ± 4.2) or REM-carbachol (8.0 ± 4.7). In addition, there was a positive correlation (R = 0.93) between the time the animals spent in NREM and the number of Fos+ neurons in the CLPB. Fos-immunoreactive neurons in the CLPB were neither cholinergic nor catecholaminergic; however about 50% of these neurons were GABAergic. We conclude that a group of GABAergic and unidentified neurons in the CLPB are active during NREM and likely involved in the control of this behavioral state. These data open new avenues for the study of NREM, as well as for the explorations of interactions between these neurons that are activated during NREM, and cells of the adjacent pontine tegmentum that are involved in the generation of REM sleep. PMID:21704676

8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gladysiewicz, M.; Wartak, M. S.; Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5

The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be usedmore » to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.« less

Resonant-cavity light-emitting diodes for optical interconnects

NASA Astrophysics Data System (ADS)

Jin, Xu

This dissertation addresses the issues related to external quantum efficiencies and light coupling efficiency of novel 1.3 mum Resonant-cavity light-emitting diodes (RCLEDs) on GaAs substrates. External quantum efficiency (QE) is defined as the number of extracted photons per injected electrons, i.e., the product of injection efficiency, internal QE, and light extraction efficiency. This study focuses on the latter two terms. Internal QE mainly depends on the properties of the active region quantum wells (QWs) used in the RCLEDs, such as composition, thickness, and strain compensation. GaAsSb/GaAs QW edge-emitting (EE) lasers are characterized experimentally to extract key parameters, such as internal QE and internal loss. With optimized QWs and a novel self-aligned EE lasers process, room temperature continuous wave (CW) operation of GaAsSb EE lasers has been demonstrated for the first time. The highest operational temperature for the EE lasers is 48°C at a wavelength as long as 1260 nm. This result is the best ever reported by a university group. In conventional LEDs, very little light generated by the active region, succeeds in escaping from the semiconductor material due to the small critical angle of total internal reflection. With the use of a resonant cavity, the light extraction efficiency of RCLEDs is significantly improved. Front and back reflectivities, detuning (offset) between resonant-cavity peak and electroluminescence, and electroluminescence linewidth have been identified as key factors influencing light extraction efficiency. Numerical simulations indicate that the fraction of luminescence transmitted through the top mirror of an optimized RCLED is around 9%, which is more than double that of conventional LEDs. This number will be larger when multiple reflections and photon recycling are considered; which are not included in the current model since they are structure dependent. The best GaAsSb/GaAs QW RCLEDs demonstrated in this work have shown narrow spectral linewidths of 7-10 nm, extracted light output power in the range of 200-300 muW, and modulation speed up to 300 MHz. This is the first demonstration of 1.3 muRCLEDs on GaAs substrates with performance comparable to InP based surface-emitting LEDs.

Optical absorption of Mg-doped layers and InGaN quantum wells on c-plane and semipolar GaN structures

NASA Astrophysics Data System (ADS)

Sizov, Dmitry; Bhat, Rajaram; Zah, Chung-en

2013-05-01

We studied optical absorption of Mg-doped AlInGaN layers using excitation-position dependent and polarization resolved photoluminescence from the slab-waveguide edge of a laser structure. The major absorption in the Mg-doped layers was found only when p-doping is activated. It increases with the removal of residual hydrogen, which in case of Mg doping is a p-type passivation impurity, and reversibly disappears after passivation by hydrogen. This absorption is weakly wavelength and temperature dependent, and isotropic. This can be attributed to acceptor-bound hole absorption, because those holes concentration is nearly equal to that of activated acceptors and weakly temperature dependent (unlike the free hole concentration, which is much lower and is an exponential function of temperature due to high ionization energy). The cross section of photon absorption on such activated acceptor was quantified to be in the order of 10-17 cm-2. The absorption cross section of free electrons was found to be at least one order of magnitude lower and below detection limit. The same technique was used to experimentally quantify band structure polarization components along basis directions for green InGaN quantum wells (QWs) grown on c- and semipolar planes. The A1 and B1 valence subbands of c-plane QW were found to comprise mostly |X⟩ and |Y⟩ states. There was rather minor amount of |Z⟩ states with average square fraction of only 0.02. In (20-21) plane, due to small band anticrossing near gamma-point, we observed highly polarized absorption edges of A1- and B1-subbands consisting mainly of |Y⟩ and |X⟩ states, respectively, and found their energy splitting to be ˜40 meV. For (11-22) plane with smaller band splitting and polarization, we observed polarization switching with indium (In) concentration greater than 30% in the QW (or photon energy less than 2.3 eV). We confirmed our study of valence band structures by optical gain measurements.

MOCVD Growth of III-V Photodetectors and Light Emitters for Integration of Optoelectronic Devices on Si substrates

NASA Astrophysics Data System (ADS)

Geng, Yu

With the increase of clock speed and wiring density in integrated circuits, inter-chip and intra-chip interconnects through conventional electrical wires encounter increasing difficulties because of the large power loss and bandwidth limitation. Optical interconnects have been proposed as an alternative to copper-based interconnects and are under intense study due to their large data capacity, high data quality and low power consumption. III-V compound semiconductors offer high intrinsic electron mobility, small effective electron mass and direct bandgap, which make this material system advantageous for high-speed optoelectronic devices. The integration of III-V optoelectronic devices on Si substrates will provide the combined advantage of a high level of integration and large volume production of Si-based electronic circuitry with the superior electrical and optical performance of III-V components, paving the way to a new generation of hybrid integrated circuits. In this thesis, the direct heteroepitaxy of photodetectors (PDs) and light emitters using metal-organic chemical vapor deposition for the integration of photonic devices on Si substrates were studied. First we studied the selective-area growth of InP/GaAs on patterned Si substrates for PDs. To overcome the loading effect, a multi-temperature composite growth technique for GaAs was developed. By decreasing various defects such as dislocations and anti-phase domains, the GaAs and InP buffer layers are with good crystalline quality and the PDs show high speed and low dark current performance both at the edge and center of the large growth well. Then the growth and fabrication of GaAs/AlGaAs QW lasers were studied. Ellipsometry was used to calibrate the Al composition of AlGaAs. Thick p and n type AlGaAs with a mirrorlike surface were grown by high V/III ratio and high temperature. The GaAs/AlGaAs broad area QW laser was successfully grown and fabricated on GaAs substrate and showed a pulsed lasing result with a threshold current density of about 800 A/cm2. For the integration of lasers on Si substrate, quantum dot (QD) lasers were studied. A flow-and-stop process of TBA was used to grow InAs QDs with the in-situ monitor EpiRas. QDs with a PL wavelength of ˜1.3 mum were grown on GaAs and Si substrates. To decrease the PL degradation problem caused by the contaminations from AlGaAs, an InGaAs insertion layer was inserted in between the AlGaAs and QDs region. Microdisk and a-Si waveguide lasers are designed and fabricated.

Safety, immunogenicity, and clinical outcomes in patients with Morquio A syndrome participating in 2 sequential open-label studies of elosulfase alfa enzyme replacement therapy (MOR-002/MOR-100), representing 5 years of treatment.

PubMed

Hendriksz, Christian; Santra, Saikat; Jones, Simon A; Geberhiwot, Tarekegn; Jesaitis, Lynne; Long, Brian; Qi, Yulan; Hawley, Sara M; Decker, Celeste

2018-04-01

Elosulfase alfa is an enzyme replacement therapy for Morquio A syndrome (mucopolysaccharidosis IVA), a multisystemic progressive lysosomal storage disorder. This report includes the primary treatment outcomes and immunogenicity profile of elosulfase alfa in patients with Morquio A syndrome from 2 sequential studies, MOR-002 (ClinicalTrials.govNCT00884949) and MOR-100 (NCT01242111), representing >5 years of clinical study data. MOR-002 was an open-label, single-arm phase 1/2 study that evaluated the pharmacokinetics, safety, immunogenicity, and preliminary efficacy of 3 sequential doses of elosulfase alfa (0.1, 1.0, and 2.0 mg/kg/week) in patients with Morquio A syndrome (n = 20) over 36 weeks, followed by an optional 36- to 48-week treatment period using elosulfase alfa 1.0 mg/kg once weekly (qw). During the 0.1 mg/kg dosing phase, 1 patient discontinued due to a type I hypersensitivity adverse event (AE), and that patient's sibling voluntarily discontinued in the absence of AEs. An additional patient discontinued due to recurrent infusion reactions during the 1.0 mg/kg continuation phase. The remaining 17 patients completed MOR-002 and enrolled in MOR-100, an open-label, long-term extension study that further evaluated safety and clinical outcomes with elosulfase alfa administered at 2.0 mg/kg qw. During the course of MOR-100, patients were given the option of receiving elosulfase alfa infusions at home with nursing assistance. Over the course of both studies, all patients experienced ≥1 AE and most patients experienced a drug-related AE, generally of mild or moderate severity. Hypersensitivity reactions reported as related to study drug occurred in 25% of patients. Thirteen patients who chose to receive infusions at home had the same tolerability and safety profile, as well as comparable compliance rates, as patients who chose to receive on-site infusions. All patients developed antibodies to elosulfase alfa. Positivity for neutralizing antibodies was associated with increased drug half-life and decreased drug clearance. Despite formation of antidrug-binding (total antidrug antibodies, TAb) and in vitro neutralizing antibodies (NAb) in all patients, these types of immunogenicity to elosulfase alfa were not correlated with safety or clinical outcomes. In contrast with the reported natural history of Morquio A, no trends toward decreasing endurance, respiratory function, or ability to perform activities of daily living were observed in this cohort over the 5-year period. Copyright © 2018 The Authors. Published by Elsevier Inc. All rights reserved.

Hanle model of a spin-orbit coupled Bose-Einstein condensate of excitons in semiconductor quantum wells

NASA Astrophysics Data System (ADS)

Andreev, S. V.; Nalitov, A. V.

2018-04-01

We present a theoretical model of a driven-dissipative spin-orbit coupled Bose-Einstein condensate of indirect excitons in semiconductor quantum wells (QW's). Our steady-state solution of the problem shares analogies with the Hanle effect in an optical orientation experiment. The role of the spin pump in our case is played by Bose-stimulated scattering into a linearly-polarized ground state and the depolarization occurs as a result of exchange interaction between electrons and holes. Our theory agrees with the recent experiment [A. A. High et al., Phys. Rev. Lett. 110, 246403 (2013), 10.1103/PhysRevLett.110.246403], where spontaneous emergence of spatial coherence and polarization textures have been observed. As a complementary test, we discuss a configuration where an external magnetic field is applied in the structure plane.

Baseline Noise Measurements at Vandenberg AFB, California.

DTIC Science & Technology

1988-01-01

8217w.h . ’.0 n r,,’a in nr’.Iwqpknn n. %a..a *k ae @ d - ’a %e q0 - .am0" o P miP ’ r m h~ in hi# mOffi r4hinP w I @ 4r" ha.maw .mha.A-v ’w, aa a...system, and therefore, are available for future analysis if required. D . Observations: A review of the data charts indicates there is no seasonal...qp)l3Ar- 3SION 13 I (4 C4O7r4 CocqV-4r- Ln ~0 ’ (Ŕwr4qw,.c I q wm V % "( 0 n q* (" ul *n *1 *n *n *n 00 tnL .L n% D % i % lu nU n cc ( tflf0 f" %a C4

Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells

NASA Astrophysics Data System (ADS)

Aeberhard, U.; Gonzalo, A.; Ulloa, J. M.

2018-05-01

Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local density of states and the spectral current flow enables the identification of different regimes for carrier localization, transport, and extraction as a function of configurational parameters. These include the number of periods, the thicknesses of the individual layers in one period, the built-in electric field, and the temperature of operation. The results for the carrier extraction efficiency are related to experimental data for different symmetric GaAsSb/GaAsN type-II quantum well superlattice solar cell devices and provide a qualitative explanation for the experimentally observed dependence of photovoltaic device performance on the period thickness.

Handbook for Sampling and Sample Preservation of Water and Wastewater

DTIC Science & Technology

1992-05-01

integers from 1 to N. N E Xi = XI1 + X 2 + X 3 . ..... + XN i=l 1 In the above example (from Table 4.1), X1 = 35.8, X2 = 33.0, ... , XN = X52 32.4; N E...41e 0 b10) -4 r- -C) a) 5l %Dt C) ON qc -0 Cl qtr C -4 %D cvj qw a) C )L- L~~~J enC- ..4 m~a CV) .4 c P.. .4 cnm0 q5C) )n me .-4C) - (J 1 () e U m. 0-4...X(l) = X = 35.8, X(2) = X2 = 33.0,..., X(52) = X52 = 32.4. X(t) is the linear trend. X’(t) is the random component. In this case, the trend can be

Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate.

PubMed

Zheng, Changda; Wang, Li; Mo, Chunlan; Fang, Wenqing; Jiang, Fengyi

2013-01-01

GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow.

Design and Real-Time Implementation of a Baseband LPC Coder for Speech Transmission over 9600 BPS Noisy Channels. Volume II. Programming Listings.

DTIC Science & Technology

1980-02-01

cwc N (w~ mm. IDmm m w. C. msite &C-ew %a~m MCI I Di . m1a.2 ,% v oa m.1] W.k1i . . 13.M mmm r, q.W.3.44. I&1242 %D2 1.J1 M.1. ItP a b nNM - f .M2 47 4...a a a a a.a a.a0 IBM a aa a11,11 a .0 a1 . U q M4 MS K IaI u C% A4 U u0 1. w4 . N MKV Ia IO1 U a,". 44 4 .4 N m N N N N N6 N N N (M M M M U M M M CD

Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gadzhiyev, I. M., E-mail: idris.intop@mail.ru; Buyalo, M. S.; Gubenko, A. E.

2016-06-15

The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section ofmore » the saturable absorber, which is sufficient for compensation of the applied bias.« less

Position-sensitive multi-wavelength photon detectors based on epitaxial InGaAs/InAlAs quantum wells

NASA Astrophysics Data System (ADS)

Ganbold, T.; Antonelli, M.; Cautero, G.; Menk, R. H.; Cucini, R.; Biasiol, G.

2015-09-01

Beam monitoring in synchrotron radiation or free electron laser facilities is extremely important for calibration and diagnostic issues. Here we propose an in-situ detector showing fast response and homogeneity for both diagnostics and calibration purposes. The devices are based on In0.75Ga0.25As/In0.75Al0.25As QWs, which offer several advantages due to their direct, low-energy band gap and high electron mobility at room temperature. A pixelation structure with 4 quadrants was developed on the back surface of the device, in order to fit commercially available readout chips. The QW devices have been tested with collimated monochromatic X-ray beams from synchrotron radiation. A rise in the current noise with positive bias was observed, which could be due to deep traps for hole carriers. Therefore, an optimized negative bias was chosen to minimize dark currents and noise. A decrease in charge collection efficiency was experienced as the beam penetrates into deeper layers, where a dislocation network is present. The prototype samples showed that individual currents obtained from each quadrant allow the position of the beam to be monitored for all the utilized energies. These detectors have a potential to estimate the position of the beam with a precision of about 10 μm.

Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier

NASA Astrophysics Data System (ADS)

Prajoon, P.; Anuja Menokey, M.; Charles Pravin, J.; Ajayan, J.; Rajesh, S.; Nirmal, D.

2018-04-01

The advantage of InGaN multiple Quantum well (MQW) Light emitting diode (LED) on a SiC substrate with compositionally step graded GaN/InAlN/GaN multi-layer barrier (MLB) is studied. The Internal quantum efficiency, Optical power, current-voltage characteristics, spontaneous emission rate and carrier distribution profile in the active region are investigated using Sentaurus TCAD simulation. An analytical model is also developed to describe the QW carrier injection efficiency, by including carrier leakage mechanisms like carrier overflow, thermionic emission and tunnelling. The enhanced electron confinement, reduced carrier asymmetry, and suppressed carrier overflow in the active region of the MLB MQW LED leads to render a superior performance than the conventional GaN barrier MQW LED. The simulation result also elucidates the efficiency droop behaviour in the MLB MQW LED, it suggests that the efficiency droop effect is remarkably improved when the GaN barrier is replaced with GaN/InAlN/GaN MLB barrier. The analysis shows a dominating behaviour of carrier escape mechanism due to tunnelling. Moreover, the lower lattice mismatching of SiC substrate with GaN epitaxial layer is attributed with good crystal quality and reduced polarization effect, ultimately enhances the optical performance of the LEDs.

Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

NASA Astrophysics Data System (ADS)

Li, Hui; Jia, Xiaowei

2018-05-01

The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kotani, Teruhisa, E-mail: tkotani@iis.u-tokyo.ac.jp; Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505; Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567

2015-09-14

Blue shift and broadening of the absorption spectra of mid-infrared intersubband transition in non-polar m-plane AlGaN/GaN 10 quantum wells were observed with increasing doping density. As the doping density was increased from 6.6 × 10{sup 11} to 6.0 × 10{sup 12 }cm{sup −2} per a quantum well, the intersubband absorption peak energy shifted from 274.0 meV to 302.9 meV, and the full width at half maximum increased from 56.4 meV to 112.4 meV. Theoretical calculations reveal that the blue shift is due to many body effects, and the intersubband linewidth in doped AlGaN/GaN QW is mainly determined by scattering due to interface roughness, LO phonons, and ionized impurities.

Effect of non-parabolicity and confinement potential on exciton binding energy in a quantum well

NASA Astrophysics Data System (ADS)

Vignesh, G.; Nithiananthi, P.

2018-04-01

The effect of non-parabolicity(NP) (both conduction and valance band) on the binding energy(EB) of a ground state exciton in GaAs/AlxGa1-xAs single Quantum Well(QW) has been calculated using variational method. Confinement of a light hole(LH-CB1-X) and heavy hole(HH-CB1-X) exciton have been numerically evaluated as a function of well width and barrier heights by imposing three different confinement potentials such as square(SQW), parabolic(PQW) and triangular(TQW). Due to NP effects, EB of exciton is increasedin the narrow well region irrespective of the type of exciton, barrier height and nature of the confinement potentials applied. Non-parabolicity effect is prominent in abrupt(SQW) and linearlyvarying(TQW) confinement potentials. All these effects are attributed to be an inter-play between the Coulombic interaction and NP effects among the subband structures.

Study on the Coupling Mechanism of the Orthogonal Dipoles with Surface Plasmon in Green LED by Cathodoluminescence.

PubMed

Feng, Yulong; Chen, Zhizhong; Jiang, Shuang; Li, Chengcheng; Chen, Yifan; Zhan, Jinglin; Chen, Yiyong; Nie, Jingxin; Jiao, Fei; Kang, Xiangning; Li, Shunfeng; Yu, Tongjun; Zhang, Guoyi; Shen, Bo

2018-04-16

We analyzed the coupling behavior between the localized surface plasmon (LSP) and quantum wells (QWs) using cathodoluminescence (CL) in a green light-emitting diodes (LED) with Ag nanoparticles (NPs) filled in photonic crystal (PhC) holes. Photoluminescence (PL) suppression and CL enhancement were obtained for the same green LED sample with the Ag NP array. Time-resolved PL (TRPL) results indicate strong coupling between the LSP and the QWs. Three-dimensional (3D) finite difference time domain (FDTD) simulation was performed using a three-body model consisting of two orthogonal dipoles and a single Ag NP. The LSP–QWs coupling effect was separated from the electron-beam (e-beam)–LSP–QW system by linear approximation. The energy dissipation was significantly reduced by the z-dipole introduction under the e-beam excitation. In this paper, the coupling mechanism is discussed and a novel emission structure is proposed.

Protein Dynamics from NMR and Computer Simulation

NASA Astrophysics Data System (ADS)

Wu, Qiong; Kravchenko, Olga; Kemple, Marvin; Likic, Vladimir; Klimtchuk, Elena; Prendergast, Franklyn

2002-03-01

Proteins exhibit internal motions from the millisecond to sub-nanosecond time scale. The challenge is to relate these internal motions to biological function. A strategy to address this aim is to apply a combination of several techniques including high-resolution NMR, computer simulation of molecular dynamics (MD), molecular graphics, and finally molecular biology, the latter to generate appropriate samples. Two difficulties that arise are: (1) the time scale which is most directly biologically relevant (ms to μs) is not readily accessible by these techniques and (2) the techniques focus on local and not collective motions. We will outline methods using ^13C-NMR to help alleviate the second problem, as applied to intestinal fatty acid binding protein, a relatively small intracellular protein believed to be involved in fatty acid transport and metabolism. This work is supported in part by PHS Grant GM34847 (FGP) and by a fellowship from the American Heart Association (QW).

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

PubMed Central

Zheng, Changda; Wang, Li; Mo, Chunlan; Fang, Wenqing; Jiang, Fengyi

2013-01-01

GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow. PMID:24369453

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn

The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3 nm–6 nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200 A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelengthmore » we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.« less

Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Freytag, Stefan, E-mail: stefan.freytag@ovgu.de; Feneberg, Martin; Berger, Christoph

2016-07-07

In{sub x}Ga{sub 1–x}N/GaN single and multi quantum well (MQW) structures with x ≈ 0.13 were investigated optically by photoreflectance, photoluminescence excitation spectroscopy, and luminescence. Clear evidence of unintentional indium incorporation into the nominal GaN barrier layers is found. The unintentional In content is found to be around 3%. Inhomogeneous distribution of In atoms occurs within the distinct quantum well (QW) layers, which is commonly described as statistical alloy fluctuation and leads to the characteristic S-shape temperature shift of emission energy. Furthermore, differences in emission energy between the first and the other QWs of a MQW stack are found experimentally. Thismore » effect is discussed with the help of model calculations and is assigned to differences in the confining potential due to unwanted indium incorporation for the upper QWs.« less

Correlation of microphotoluminescence spectroscopy, scanning transmission electron microscopy, and atom probe tomography on a single nano-object containing an InGaN/GaN multiquantum well system.

PubMed

Rigutti, Lorenzo; Blum, Ivan; Shinde, Deodatta; Hernández-Maldonado, David; Lefebvre, Williams; Houard, Jonathan; Vurpillot, François; Vella, Angela; Tchernycheva, Maria; Durand, Christophe; Eymery, Joël; Deconihout, Bernard

2014-01-08

A single nanoscale object containing a set of InGaN/GaN nonpolar multiple-quantum wells has been analyzed by microphotoluminescence spectroscopy (μPL), high-resolution scanning transmission electron microscopy (HR-STEM) and atom probe tomography (APT). The correlated measurements constitute a rich and coherent set of data supporting the interpretation that the observed μPL narrow emission lines, polarized perpendicularly to the crystal c-axis and with energies in the interval 2.9-3.3 eV, are related to exciton states localized in potential minima induced by the irregular 3D In distribution within the quantum well (QW) planes. This novel method opens up interesting perspectives, as it will be possible to apply it on a wide class of quantum confining emitters and nano-objects.

Intersubband linear and nonlinear optical response of the delta-doped SiGe quantum well

NASA Astrophysics Data System (ADS)

Duque, C. A.; Akimov, V.; Demediuk, R.; Belykh, V.; Tiutiunnyk, A.; Morales, A. L.; Restrepo, R. L.; Mora-Ramos, M. E.; Fomina, O.; Tulupenko, V.

2015-11-01

The degree of ionization, controlled by external fields, of delta-doped layers inside the quantum wells can affect their energy structure, therefore delta-doped QWs can be used to engineer different kinds of tunable THz optical devices on intersubband transitions. Here it is calculated and analyzed the linear and nonlinear (Kerr-type) optical response, including absorption coefficient and refractive index change of 20 nm-wide Si0.8Ge0.2/Si/Si0.8Ge0.2 QW structures n-delta-doped either at the center or at the edge of the well under different temperatures. The conduction subband energy structure was found self-consistently, including the calculation of the impurity binding energy. Our results show that the degree of ionization of the impurity layer as well as the heterostructure symmetry has a strong influence on optical properties of the structures in THz region.

Transport spin dependent in nanostructures: Current and geometry effect of quantum dots in presence of spin-orbit interaction

NASA Astrophysics Data System (ADS)

Paredes-Gutiérrez, H.; Pérez-Merchancano, S. T.; Beltran-Rios, C. L.

2017-12-01

In this work, we study the quantum electron transport through a Quantum Dots Structure (QDs), with different geometries, embedded in a Quantum Well (QW). The behaviour of the current through the nanostructure (dot and well) is studied considering the orbital spin coupling of the electrons and the Rashba effect, by means of the second quantization theory and the standard model of Green’s functions. Our results show the behaviour of the current in the quantum system as a function of the electric field, presenting resonant states for specific values of both the external field and the spin polarization. Similarly, the behaviour of the current on the nanostructure changes when the geometry of the QD and the size of the same are modified as a function of the polarization of the electron spin and the potential of quantum confinement.

Search for pair-produced heavy quarks decaying to W q in the two-lepton channel at ( s ) = 7 TeV with the ATLAS detector

DOE PAGES

Aad, G.; Abbott, B.; Abdallah, J.; ...

2012-07-23

A search is presented for heavy-quark pair productionmore » $$Q\\bar{Q}$$ under the decay hypothesis $$Q\\bar{Q}$$→W +qW - $$\\bar{q}$$ with q = d, s, b for up-type Q or q = u, c for down-type Q. The search is performed with 1.04 fb -1 of integrated luminosity from pp collisions at $$\\sqrt{s}$$ =7 TeV collected by the ATLAS detector at the CERN LHC. Dilepton final states are selected, requiring large missing transverse momentum and at least two jets. Mass reconstruction of heavy-quark candidates is performed by assuming that the W boson decay products are nearly collinear. Lastly, the data are in agreement with standard model expectations; a heavy quark with mass less than 350 GeV is excluded at 95% confidence level.« less

Helium like impurity in CdTe/ Cd1-xMnxTe semimagnetic semiconductors under magnetic field: Dimensionality effect on electron - Electron interaction

NASA Astrophysics Data System (ADS)

Kalpana, Panneer Selvam; Jayakumar, Kalyanasundaram

2017-11-01

We study the effect of magnetic field on the Coulomb interaction between the two electrons confined inside a CdTe/Cd1-xMnxTe Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD) for the composition of Mn2+ ion, x = 0.3. The two particle Schrodinger equation has been solved using variational technique in the effective mass approximation. The results show that the applied magnetic field tremendously alters the Coulomb interaction of the electrons and their binding to the donor impurity by shrinking the spatial extension of the two particle wavefunction and leads to tunnelling through the barrier. The qualitative phenomenon involved in such variation of electron - electron interaction with the magnetic field has also been explained through the 3D - plot of the probability density function.

Multi-dimensional coherent optical spectroscopy of semiconductor nanostructures: Collinear and non-collinear approaches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nardin, Gaël; Li, Hebin; Autry, Travis M.

2015-03-21

We review our recent work on multi-dimensional coherent optical spectroscopy (MDCS) of semiconductor nanostructures. Two approaches, appropriate for the study of semiconductor materials, are presented and compared. A first method is based on a non-collinear geometry, where the Four-Wave-Mixing (FWM) signal is detected in the form of a radiated optical field. This approach works for samples with translational symmetry, such as Quantum Wells (QWs) or large and dense ensembles of Quantum Dots (QDs). A second method detects the FWM in the form of a photocurrent in a collinear geometry. This second approach extends the horizon of MDCS to sub-diffraction nanostructures,more » such as single QDs, nanowires, or nanotubes, and small ensembles thereof. Examples of experimental results obtained on semiconductor QW structures are given for each method. In particular, it is shown how MDCS can assess coupling between excitons confined in separated QWs.« less

Quantitative Scanning Transmission Electron Microscopy of Electronic and Nanostructured Materials

NASA Astrophysics Data System (ADS)

Yankovich, Andrew B.

Electronic and nanostructured materials have been investigated using advanced scanning transmission electron microscopy (STEM) techniques. The first topic is the microstructure of Ga and Sb-doped ZnO. Ga-doped ZnO is a candidate transparent conducting oxide material. The microstructure of GZO thin films grown by MBE under different growth conditions and different substrates were examined using various electron microscopy (EM) techniques. The microstructure, prevalent defects, and polarity in these films strongly depend on the growth conditions and substrate. Sb-doped ZnO nanowires have been shown to be the first route to stable p-type ZnO. Using Z-contrast STEM, I have showed that an unusual microstructure of Sb-decorated head-to-head inversion domain boundaries and internal voids contain all the Sb in the nanowires and cause the p-type conduction. InGaN thin films and InGaN / GaN quantum wells (QW) for light emitting diodes are the second topic. Low-dose Z-contrast STEM, PACBED, and EDS on InGaN QW LED structures grown by MOCVD show no evidence for nanoscale composition variations, contradicting previous reports. In addition, a new extended defect in GaN and InGaN was discovered. The defect consists of a faceted pyramid-shaped void that produces a threading dislocation along the [0001] growth direction, and is likely caused by carbon contamination during growth. Non-rigid registration (NRR) and high-precision STEM of nanoparticles is the final topic. NRR is a new image processing technique that corrects distortions arising from the serial nature of STEM acquisition that previously limited the precision of locating atomic columns and counting the number of atoms in images. NRR was used to demonstrate sub-picometer precision in STEM images of single crystal Si and GaN, the best achieved in EM. NRR was used to measure the atomic surface structure of Pt nanoacatalysts and Au nanoparticles, which revealed new bond length variation phenomenon of surface atoms. In addition, NRR allowed for measuring the 3D atomic structure of the nanoparticles with less than 1 atom uncertainty, a long-standing problem in EM. Finally, NRR was adapted to EDS spectrum images, significantly enhancing the signal to noise ratio and resolution of an EDS spectrum image of Ca-doped NdTiO3 compared to conventional methods.

Dynamic properties of quantum dot distributed feedback lasers

NASA Astrophysics Data System (ADS)

Su, Hui

Semiconductor quantum dots (QDs) are nano-structures with three-dimensional spatial confinement of electrons and holes, representing the ultimate case of the application of the size quantization concept to semiconductor hetero-structures. The knowledge about the dynamic properties of QD semiconductor diode lasers is essential to improve the device performance and understand the physics of the QDs. In this dissertation, the dynamic properties of QD distributed feedback lasers (DFBs) are studied. The response function of QD DFBs under external modulation is characterized and the gain compression with photon density is identified to be the limiting factor of the modulation bandwidth. The enhancement of the gain compression by the gain saturation with the carrier density in QDs is analyzed for the first time with suggestions to improve the high speed performance of the devices by increasing the maximum gain of the QD medium. The linewidth of the QD DFBs are found to be more than one order of magnitude narrower than that of conventional quantum well (QW) DFBs at comparable output powers. The figure of merit for the narrow linewidth is identified by the comparison between different semiconductor materials, including bulk, QWs and QDs. Linewidth rebroadening and the effects of gain offset are also investigated. The effects of external feedback on the QD DFBs are compared to QW DFBs. Higher external feedback resistance is found in QD DFBs with an 8-dB improvement in terms of the coherence collapse of the devices and 20-dB improvement in terms of the degradation of the signal-to-noise ratio under 2.5 Gbps modulation. This result enables the isolator-free operation of the QD DFBs in real communication systems based on the IEEE 802.3ae Ethernet standard. Finally, the chirp of QD DFBs is studied by time-resolved-chirp measurements. The wavelength chirping of the QD DFBs under 2.5 Gbps modulation is characterized. The above-threshold behavior of the linewidth enhancement factor in QDs is studied, in contrast to the below-threshold ones in most of the published data to-date. The strong dependence of the linewidth enhancement factor on the photon density is explained by the enhancement of gain compression by the gain saturation with the carrier density, which is related to the inhomogeneous broadening and spectral hole burning in QDs.

Nonclinical safety and pharmacokinetics of Miglyol 812: A medium chain triglyceride in exenatide once weekly suspension.

PubMed

Buss, Nicholas; Ryan, Patricia; Baughman, Todd; Roy, Denis; Patterson, Claire; Gordon, Carolyn; Dixit, Rakesh

2018-05-28

Exenatide, a glucagon-like peptide-1 receptor agonist was originally developed as either a twice daily or once weekly injectable therapeutic for patients with type 2 diabetes. Exenatide QW suspension was developed for use with an autoinjector device, in which the microspheres are suspended in Miglyol 812, a mixture of medium chain triglycerides (MCTs). MCTs are a class of lipids whose fatty acid chains contain from six to 12 carbon atoms (medium chain fatty acids or MCFAs). While MCTs are edible oils present in many foods, including foodstuffs containing coconut and palm kernel oils, limited information is available regarding the oral and subcutaneous bioavailability of MCTs as well as safety following subcutaneous injection. These studies were designed to investigate the non-clinical pharmacokinetics and safety of MCTs. In a single dose pharmacokinetic study, MCFAs were rapidly detected in the plasma of rats following oral administration of either Miglyol 812 or tricaprylin at doses of 10 or 9.48 g kg -1 , respectively. Following subcutaneous dosing with Miglyol 812, MCFAs were rapidly absorbed with a similar profile to that following oral dosing. Furthermore, the toxicity of Miglyol 812 alone was evaluated in a 3 month repeat dose toxicology studies in cynomolgus monkeys. In this study, weekly subcutaneous doses of 0.15 g kg -1 did not elicit any treatment-related effects in cynomolgus monkeys. In conclusion, these studies alongside the available literature data show that Miglyol 812 is a safe excipient for use in subcutaneously administered therapeutics. Copyright © 2018 John Wiley & Sons, Ltd.

Is insulin the preferred treatment for HbA1c >9%?

PubMed

Bloomgarden, Zachary

2017-09-01

The algorithms and guidelines of the American Association of Clinical Endocrinologists and the American Diabetes Association recommend that insulin administration be strongly considered for people with type 2 diabetes (T2D) with HbA1c levels exceeding 9.0% and 10%, respectively. Although the caveat is given in both sets of recommendations that this is particularly appropriate when patients are "symptomatic," referring to urinary frequency with increased thirst and appetite, weight loss, and ketosis, the clinical definition of such presentations may be ill-defined, and it is noteworthy that both documents consider insulin to offer particular benefit under such circumstances. However, with multiple options for glycemic treatment, it is of interest to reconsider this argument for insulin use. It should be recalled that in the UK Prospective Diabetes Study, diet alone was associated with a reduction in HbA1c from 9% to 7%. Drug-naïve people with T2D do often show surprisingly strong reductions in HbA1c with metformin-based dual-agent oral treatment approaches; a recent report showed that even with baseline HbA1c >11%, the combination of metformin with a sulfonylurea, pioglitazone, or sitagliptin was associated with reduction in HbA1c from 11.6% to 6.0%. A 32-week study of the combination of rosiglitazone with metformin in patients with mean baseline HbA1c 8.9% showed a mean HbA1c reduction of 2.3%, and an open-label cohort with baseline HbA1c 11.8% had a reduction in HbA1c to 7.8%. With metformin plus sitagliptin, a mean placebo-adjusted HbA1c reduction of 2.1% from a baseline of 8.8% was reported, with those patients with baseline HbA1c >9% having a 2.6% reduction in HbA1c, and an open-label cohort with baseline HbA1c 11.2% having a 2.9% reduction in HbA1c. Similar 2% HbA1c reductions from baseline levels of 9.1% were seen with metformin in initial combination with the sodium-glucose cotransporter 2 (SGLT2) inhibitor dapagliflozin. Although such dual oral agent approaches are more effective than monotherapy, with a combination regimen the HbA1c reduction will not be directly additive, because the expected reduction decreases at lower baseline HbA1c levels. As an example of this, administration of canagliflozin 300 mg daily to patients with baseline HbA1c >9% reduced levels from 9.6% by 1.8%, whereas at a baseline HbA1c of 10% either canagliflozin 300 mg or metformin 2 g/day reduced HbA1c by 2%; the addition of both agents led to an HbA1c reduction by somewhat less than 3%, which appears concordant with a reduction by the second agent from approximately 8% (10% to 2%). Similar less-than-additive effects of the addition of exenatide QW to dapagliflozin have been reported, with HbA1c reduction from a baseline of 10.0%-10.1% of 1.9% and 1.6% with the individual agents, respectively, and a reduction of 2.2% with their combination. However, one may consider these approaches inferior to the expected HbA1c reduction with insulin, suggesting that insulin should, indeed, be the preferred treatment for people with T2D and HbA1c >9%. Rather, studies comparing basal insulin directly with glucagon-like peptide-1 (GLP-1) receptor agonists (RA) suggest that the latter agents may offer superior benefit. The Diabetes Therapy Utilization: Researching Changes in HBA1C, Weight, and Other Factors Through Intervention with Exenatide Once Weekly (DURATION)-3 and Liraglutide Effect and Action in Diabetes (LEAD)-5 studies compared exenatide QW and liraglutide, respectively, with insulin glargine. Those study participants in the highest quartile of baseline HbA1c had levels ≥9.0% and ≥8.9%, with the GLP-1RA leading to 0.3% and 0.2% greater reductions in HbA1c, respectively, than insulin glargine. Another study comparing T2D patients receiving oral agents given liraglutide with those given insulin glargine showed that those in the highest baseline HbA1c quartile (mean 10.6%) had an HbA1c reduction of 3.1% with either agent. In the exenatide QW study, the reduction in HbA1c with this agent exceeded that with insulin glargine for those groups of study participants with HbA1c 9.0%-9.4%, 9.5%-9.9%, 10.0%-10.4%, 10.5%-10.9%, and even ≥11.0%. Similar superiority of the HbA1c-lowering effect of exenatide QW compared with that of insulin glargine was reported in a study with baseline HbA1c 8.5%. An individual-patient meta-analysis of six studies of another weekly GLP-1RA, namely dulaglutide, showed that at a baseline HbA1c of 10% the expected HbA1c reduction would be nearly 2.5%, and a study directly comparing dulaglutide with insulin glargine also showed a superior HbA1c-lowering effect of the former. Another advantage of the GLP-1RAs is their association with weight loss, rather than the weight gain associated with insulin treatment. An interesting potential combination is that of a GLP-1RA with a thiazolidinedione. In a study comparing the addition of exenatide QW and pioglitazone with the addition of basal-bolus insulin in 101 people receiving sulfonylureas and metformin with baseline HbA1c >10%, HbA1c fell from >11% by >4% compared with <4%, respectively, and the GLP-1RA plus thiazolidinedione treatment was associated with less weight gain and hypoglycemia. What can we conclude? Should HbA1c 11% be the new "use insulin" point? Insulin is an important part of our armamentarium for T2D, and is certainly needed for many patients, but with current therapeutic approaches including metformin, incretin-based treatments, SGLT2 inhibitors, and, possibly, thiazolidinediones, we can reconsider its use in many instances. Although there is no doubt that insulin is necessary for truly uncontrolled diabetes, we may wish to better define its correct indications. © 2017 Ruijin Hospital, Shanghai Jiaotong University School of Medicine and John Wiley & Sons Australia, Ltd.

Discrete-Time Quantum Walk with Phase Disorder: Localization and Entanglement Entropy.

PubMed

Zeng, Meng; Yong, Ee Hou

2017-09-20

Quantum Walk (QW) has very different transport properties to its classical counterpart due to interference effects. Here we study the discrete-time quantum walk (DTQW) with on-site static/dynamic phase disorder following either binary or uniform distribution in both one and two dimensions. For one dimension, we consider the Hadamard coin; for two dimensions, we consider either a 2-level Hadamard coin (Hadamard walk) or a 4-level Grover coin (Grover walk) for the rotation in coin-space. We study the transport properties e.g. inverse participation ratio (IPR) and the standard deviation of the density function (σ) as well as the coin-position entanglement entropy (EE), due to the two types of phase disorders and the two types of coins. Our numerical simulations show that the dimensionality, the type of coins, and whether the disorder is static or dynamic play a pivotal role and lead to interesting behaviors of the DTQW. The distribution of the phase disorder has very minor effects on the quantum walk.

1987 CRC Octane Number Requirement Survey

DTIC Science & Technology

1988-08-01

GIo tzc I .. G 0l 00 000 00CC D D0 000 C 09 In +1+1+1 +1+1+1 +1+1+1 +1+1+1 0jO r Lfl ~C C J~ V! 0104l - u coc00 0o00 G00 c 𔃺c1010c (U, Ch % C C CD 0...w% wm 0% - 0 -L 00 0% CD-r- -0 0 . 4p 0 .0% CD. CV) qw %Q 0% 0 CD 00 co Go co ’. % ’ 0% 0% 0 00 09 0% 0%9 0%9 0% 09 CL. Q 7 4 e 0 %C - Ch 4 0 0 r% 0 0...n -wc 44 c - m x ~~in Id b, m U- Ix C DC D40Qq-A0% c DC aC .- 0 LU- 5.. i 0 10 VI0% t at Ch C% 0I % 0 0 0 w 01040 0 Q CDC 0 010 00 CDQC QC %. ukooC co

Prime Contract Awards Alphabetically by Contractor, State or Country, and Place. Part 13 (NCR Media Products Division, Rockville, Maryland - Picker International Inc, San Francisco, California), FY1991

DTIC Science & Technology

1991-01-01

report. the research , or credited with the content of the report. If editor or compiler, this should follow the name(s). Block 15. Number of Pages...10000 .4(0(0(0 >.FC.JNNNNNN-NN NNN M D(4a(01 r ,r c7 01l KfC I (0(04 4) .- 4 00 4 x0 c. M400(0)0 Xɘ)0 id >4 D4>(O0004 : r : ofK U q -4 (0# N l C-1...0)0 -I m-4-4 qw4 f- -It w 0 wNNNNw N0000 ww- 4C.5 - N0 , 1 I-41 0)I -4 II CI0 "" acwwn L)04)fL~OOOCOO~lfI0 0 0. if 𔃻 I 0).4 KfC )C )C C DL)I n6 C>~ C

3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Chi-Kang; Wu, Chen-Kuo; Hsu, Chung-Cheng

2016-05-15

In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pitmore » sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections.« less

Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Y. F.; Cao, X. A., E-mail: xacao@mail.wvu.edu

2014-11-17

CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasinglymore » dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions.« less

Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells

NASA Astrophysics Data System (ADS)

Bolshakov, A. S.; Chaldyshev, V. V.; Zavarin, E. E.; Sakharov, A. V.; Lundin, W. V.; Tsatsulnikov, A. F.; Yagovkina, M. A.

2017-04-01

We studied the optical properties of periodic InGaN/GaN multiple quantum well systems with different numbers of periods. A resonant increase in the optical reflection and simultaneous suppression of the optical absorption have been revealed experimentally at room temperature when the Bragg and exciton resonances were tuned to each other. Numerical modeling with a single set of parameters gave a quantitatively accurate fit of the experimental reflection and transmission spectra in a wide wavelength range and various angles of the light incidence. The model included both exciton resonance and non-resonant band-to-band transitions in the InGaN quantum wells, as well as Rayleigh light scattering in the GaN buffer layer. The analysis also involved x-ray diffraction and photoluminescence data. It allowed us to determine the key parameters of the structure. In particular, the radiative broadening of the InGaN QW excitons was evaluated as 0.20 ± 0.02 meV.

Towards non-classical walks with bright laser pulses

NASA Astrophysics Data System (ADS)

Sephton, B.; Dudley, A.; Forbes, A.

2017-08-01

In the avid search for means to increase computational power in comparison to that which is currently available, quantum walks (QWs) have become a promising option with derived quantum algorithms providing an associated speed up compared to what is currently used for implementation in classical computers. It has additionally been shown that the physical implementation of QWs will provide a successful computational basis for a quantum computer. It follows that considerable drive for finding such means has been occurring over the 20+ years since its introduction with phenomena such as electrons and photons being employed. Principal problems encountered with such quantum systems involve the vulnerability to environmental influence as well as scalability of the systems. Here we outline how to perform the QW due to interference characteristics inherent in the phenomenon, to mitigate these challenges. We utilize the properties of vector beams to physically implement such a walk in orbital angular momentum space by manipulating polarization and exploiting the non-separability of such beams.

Quantum-well exciton polariton emission from multi-quantum-well wire structures

NASA Astrophysics Data System (ADS)

Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.

The radiative decay of quantum-well exciton (QWE) polaritons in microstructured Al0.3Ga0.7As - GaAs multi-quantum wells (MQW) has been studied by photoluminescence spectroscopy. Periodic wire structures with lateral periodicities a = 250-500 nm and lateral widths t = 100-200 nm have been fabricated by plasma etching. The thickness of the QWs was 13 nm. In the QW wire samples the free-exciton photoluminescence was strongly reduced and the QWE polariton emission was observed as a maximum peaked at a 3 meV higher energy than the free QWE transition. In samples which had only a microstructured cladding layer, the free-exciton photoluminescence was dominant in the spectrum and the QWE polariton emission was observed as a shoulder on the high-energy side of the free QWE transition. In addition, two transitions at the low energy side of the free QWE photoluminescence were present in the microstructured samples, which were related to etching induced states.

Single-shot quantum nondemolition measurement of a quantum-dot electron spin using cavity exciton-polaritons

NASA Astrophysics Data System (ADS)

Puri, Shruti; McMahon, Peter L.; Yamamoto, Yoshihisa

2014-10-01

We propose a scheme to perform single-shot quantum nondemolition (QND) readout of the spin of an electron trapped in a semiconductor quantum dot (QD). Our proposal relies on the interaction of the QD electron spin with optically excited, quantum well (QW) microcavity exciton-polaritons. The spin-dependent Coulomb exchange interaction between the QD electron and cavity polaritons causes the phase and intensity response of left circularly polarized light to be different than that of right circularly polarized light, in such a way that the QD electron's spin can be inferred from the response to a linearly polarized probe reflected or transmitted from the cavity. We show that with careful device design it is possible to essentially eliminate spin-flip Raman transitions. Thus a QND measurement of the QD electron spin can be performed within a few tens of nanoseconds with fidelity ˜99.95%. This improves upon current optical QD spin readout techniques across multiple metrics, including speed and scalability.

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

PubMed

Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao

2017-12-11

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

InP on SOI devices for optical communication and optical network on chip

NASA Astrophysics Data System (ADS)

Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

2011-01-01

For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

Enhanced recycling network for spent e-bicycle batteries: A case study in Xuzhou, China.

PubMed

Chen, Fu; Yang, Baodan; Zhang, Wangyuan; Ma, Jing; Lv, Jie; Yang, Yongjun

2017-02-01

Electric bicycles (e-bicycles) are a primary means of commuting in China because of their light weight, speed, and low maintenance costs. Owing to short service life and environmental pollution hazards, recycling and reuse of e-bicycle batteries has always been a focus of industry and academia. As a typical case of both production and use of large electric bicycles, 113 major sellers, 378 corporate and individual buyers, 147 large e-bicycle repair centers, and 1317 e-bicycle owners in Xuzhou City were investigated in order to understand the sales, use, recycling, and disposal of spent e-bicycle batteries. The findings show that the existing distempered recycling system is the main limitation of spent battery recovery, and the actual recovery rate of spent batteries is lower than the estimated output (QW) for the years 2011-2014. Electric bicycle sellers play a fundamental role in the collection of spent batteries in Xuzhou, accounting for 42.3±8.3% of all batteries recovered. The widespread use of lithium batteries in recent years has resulted in a reduction in spent battery recycling because of lower battery prices. Furthermore, consumer preferences are another important factor affecting the actual recovery rate according to survey results evaluated using canonical correspondence analysis. In this paper, we suggest that a reverse logistics network system for spent battery recycling should be established in the future; in addition, enhancing producer responsibility, increasing publicity, raising of public awareness, developing green public transport, and reducing dependence on e-bicycles also should be pursued. This study seeks to provide guidance for planning construction and management policies for an effective spent battery recycling system in China and other developing countries. Copyright © 2016 Elsevier Ltd. All rights reserved.

Evolution of Exenatide as a Diabetes Therapeutic

PubMed Central

Bhavsar, Sunil; Mudaliar, Sunder; Cherrington, Alan

2013-01-01

Type 2 diabetes (T2DM) is a disease of epidemic proportion associated with significant morbidity and excess mortality. Optimal glucose control reduces the risk of microvascular and possibly macrovascular complications due to diabetes. However, glycemic control is rarely optimal and several therapeutic interventions for the treatment of diabetes cause hypoglycemia and weight gain; some may exacerbate cardiovascular risk. Exenatide (synthetic exendin-4) is a glucagon-like peptide-1 receptor (GLP-1R) agonist developed as a first-in-class diabetes therapy. This review presents an overview of the evolution of exenatide as a T2DM treatment, beginning with the seminal preclinical discoveries and continuing through to clinical pharmacology investigations and phase 3 clinical trials. In patients with T2DM, exenatide enhanced glucose-dependent insulin secretion, suppressed inappropriately elevated glucagon secretion, slowed gastric emptying, and enhanced satiety. In controlled phase 3 clinical trials ranging from 12 to 52 weeks, 10-mcg exenatide twice daily (ExBID) reduced mean HbA1c by -0.8% to -1.7% as monotherapy or in combination with metformin (MET), sulfonylureas (SFU), and/or thiazolidinediones (TZD); with mean weight losses of -1.2 kg to -8.0 kg. In controlled phase 3 trials ranging from 24 to 30 weeks, a 2-mg once-weekly exenatide formulation (ExQW) reduced mean HbA1c by -1.3% to -1.9%, with mean weight reductions of -2.3 to -3.7 kg. Exenatide was generally well-tolerated. The most common side effects were gastrointestinal in nature, mild, and transient. Nausea was the most prevalent adverse event. The incidence of hypoglycemia was generally low. By building upon early observations exenatide was successfully developed into an effective diabetes therapy. PMID:23256660

High 400 °C operation temperature blue spectrum concentration solar junction in GaInN/GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

2014-12-15

Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1 V is achieved. Of the photons absorbed in the limited spectral range of <450 nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49 mW/cm{sup 2} to 0.51 mW/cm{sup 2} at 40 suns and then falls 0.42 mW/cm{sup 2}more » at 150 suns. Under external heating, a maximum of 0.59 mW/cm{sup 2} is reached at 250 °C. Even at 400 °C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.« less

Infrared absorption and admittance spectroscopy of Ge quantum dots on a strained SiGe layer

NASA Astrophysics Data System (ADS)

Yakimov, A. I.; Nikiforov, A. I.; Timofeev, V. A.; Dvurechenskii, A. V.

2011-12-01

A combined infrared absorption and admittance spectroscopy is carried out in examining the energy level structure and the hole emission process in self-assembled Ge quantum dots (QDs) placed on a strained Si0.65Ge0.35 quantum well (QW), which, in turn, is incorporated in a Si matrix. In the midinfrared spectral range, the dots exhibit three dominant absorption bands peaked at 130, 250 and 390 meV. By a comparison between absorption measurements and six-band {\\bf k}\\;{\\bm \\cdot}\\;{\\bf p} calculations, the long-wave (~130 meV) resonance is attributed to a transition from the QD hole ground state to the two-dimensional heavy-hole states confined in the Si0.65Ge0.35 layer. The mid-wave absorption band around 390 meV is ascribed to a transition from the QD hole ground state to the three-dimensional continuum states of the Si matrix. An equivalent absorption cross section for these two types of transitions is determined to be 1.2 × 10-15 cm2 and 1.2 × 10-16 cm2, respectively. The origin of the transmission minimum around 250 meV is more ambiguous. We tentatively propose that it can be due to transition either from the highest heavy-hole subband of the Si0.65Ge0.35 QW to continuum states above the Si barrier or from the dot states to the light-hole and split-off subbands of the Si0.65Ge0.35 layer. The photoinduced bleaching of the near-infrared absorption is detected under interband optical excitation of undoped samples. This finding is explained by blocking the interband transitions inside the dots due to the state filling effect. By using the admittance spectroscopy, the mechanism of hole escape from QDs in the presence of an ac vertical electric field is identified. A thermally activated emission from the QD ground state into the two-dimensional states of the Si0.65Ge0.35 well is observed. From the temperature- and frequency-dependent measurements the QD hole ground state is determined to be located ~160 meV below the heavy-hole subband of the Si0.65Ge0.35 layer in good agreement with the results obtained by infrared absorption spectroscopy and six-band {\\bf k}\\;{\\bm \\cdot}\\;{\\bf p} theory. The information acquired from our experimental observations is valuable for feasible device applications.

Mass discharge assessment at a brominated DNAPL site: Effects of known DNAPL source mass removal

NASA Astrophysics Data System (ADS)

Johnston, C. D.; Davis, G. B.; Bastow, T. P.; Woodbury, R. J.; Rao, P. S. C.; Annable, M. D.; Rhodes, S.

2014-08-01

Management and closure of contaminated sites is increasingly being proposed on the basis of mass flux of dissolved contaminants in groundwater. Better understanding of the links between source mass removal and contaminant mass fluxes in groundwater would allow greater acceptance of this metric in dealing with contaminated sites. Our objectives here were to show how measurements of the distribution of contaminant mass flux and the overall mass discharge emanating from the source under undisturbed groundwater conditions could be related to the processes and extent of source mass depletion. In addition, these estimates of mass discharge were sought in the application of agreed remediation targets set in terms of pumped groundwater quality from offsite wells. Results are reported from field studies conducted over a 5-year period at a brominated DNAPL (tetrabromoethane, TBA; and tribromoethene, TriBE) site located in suburban Perth, Western Australia. Groundwater fluxes (qw; L3/L2/T) and mass fluxes (Jc; M/L2/T) of dissolved brominated compounds were simultaneously estimated by deploying Passive Flux Meters (PFMs) in wells in a heterogeneous layered aquifer. PFMs were deployed in control plane (CP) wells immediately down-gradient of the source zone, before (2006) and after (2011) 69-85% of the source mass was removed, mainly by groundwater pumping from the source zone. The high-resolution (26-cm depth interval) measures of qw and Jc along the source CP allowed investigation of the DNAPL source-zone architecture and impacts of source mass removal. Comparable estimates of total mass discharge (MD; M/T) across the source zone CP reduced from 104 g day- 1 to 24-31 g day- 1 (70-77% reductions). Importantly, this mass discharge reduction was consistent with the estimated proportion of source mass remaining at the site (15-31%). That is, a linear relationship between mass discharge and source mass is suggested. The spatial detail of groundwater and mass flux distributions also provided further evidence of the source zone architecture and DNAPL mass depletion processes. This was especially apparent in different mass-depletion rates from distinct parts of the CP. High mass fluxes and groundwater fluxes located near the base of the aquifer dominated in terms of the dissolved mass flux in the profile, although not in terms of concentrations. Reductions observed in Jc and MD were used to better target future remedial efforts. Integration of the observations from the PFM deployments and the source mass depletion provided a basis for establishing flux-based management criteria for the site.

Mass discharge assessment at a brominated DNAPL site: Effects of known DNAPL source mass removal.

PubMed

Johnston, C D; Davis, G B; Bastow, T P; Woodbury, R J; Rao, P S C; Annable, M D; Rhodes, S

2014-08-01

Management and closure of contaminated sites is increasingly being proposed on the basis of mass flux of dissolved contaminants in groundwater. Better understanding of the links between source mass removal and contaminant mass fluxes in groundwater would allow greater acceptance of this metric in dealing with contaminated sites. Our objectives here were to show how measurements of the distribution of contaminant mass flux and the overall mass discharge emanating from the source under undisturbed groundwater conditions could be related to the processes and extent of source mass depletion. In addition, these estimates of mass discharge were sought in the application of agreed remediation targets set in terms of pumped groundwater quality from offsite wells. Results are reported from field studies conducted over a 5-year period at a brominated DNAPL (tetrabromoethane, TBA; and tribromoethene, TriBE) site located in suburban Perth, Western Australia. Groundwater fluxes (qw; L(3)/L(2)/T) and mass fluxes (Jc; M/L(2)/T) of dissolved brominated compounds were simultaneously estimated by deploying Passive Flux Meters (PFMs) in wells in a heterogeneous layered aquifer. PFMs were deployed in control plane (CP) wells immediately down-gradient of the source zone, before (2006) and after (2011) 69-85% of the source mass was removed, mainly by groundwater pumping from the source zone. The high-resolution (26-cm depth interval) measures of qw and Jc along the source CP allowed investigation of the DNAPL source-zone architecture and impacts of source mass removal. Comparable estimates of total mass discharge (MD; M/T) across the source zone CP reduced from 104gday(-1) to 24-31gday(-1) (70-77% reductions). Importantly, this mass discharge reduction was consistent with the estimated proportion of source mass remaining at the site (15-31%). That is, a linear relationship between mass discharge and source mass is suggested. The spatial detail of groundwater and mass flux distributions also provided further evidence of the source zone architecture and DNAPL mass depletion processes. This was especially apparent in different mass-depletion rates from distinct parts of the CP. High mass fluxes and groundwater fluxes located near the base of the aquifer dominated in terms of the dissolved mass flux in the profile, although not in terms of concentrations. Reductions observed in Jc and MD were used to better target future remedial efforts. Integration of the observations from the PFM deployments and the source mass depletion provided a basis for establishing flux-based management criteria for the site. Copyright © 2013 Elsevier B.V. All rights reserved.

Growth of 1.5-1.55 micron gallium indium nitrogen arsenic antimonide lasers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Bae, Hopil

With the advent of new Internet services for exchaging not only texts and pictures but also home-made videos and high-definition movies, the appetite for more internet bandwidth is still growing at a fast pace. Satisfying these demands require extending the high-speed fiber optical networks all the way to the end users. This approach will require high-performance lasers, detectors, and modulators that are also very inexpensive and power-efficient. VCSELs are ideal light sources for this application due to their low power consumption, easier fiber coupling, ease of fabrication, and the possibility of dense 2-D integration. A new GaAs-based gain material, GaInNAsSb, can be an enabling technology for VCSELs in the 1.3-1.6mum wavelength range appropriate for optical communications. It can also enable high-power lasers for pumping Raman amplifiers, which can significantly increase the usable bandwidth of optical fibers. Growth of GaInNAsSb by molecular beam epitaxy has been very challenging, but various improvements in growth and annealing conditions lead to very low-threshold 1.55mum edge-emitting lasers and the first GaAs-based pulsed-mode 1.534mum VCSELs. Improving their temperature stability and achieving room-temperature continuous-wave(CW) VCSELs was the main objective of this thesis work. This thesis first discusses additional improvements in annealing and growth conditions, which led to a factor of 4 increase in the peak pholuminescence intensity. Edge-emitting lasers employing different numbers and structures of GaInNasSb QWs were compared, and the carrier leakage to the GaNAs barriers has been identified to be the dominant source of carrier recombination, by measurements using segmented contacts. Using the same triple QW structures and carefully designed AlGaAs/GaAs DBR mirrors, the first-ever all-epitaxial near-room-temperature CW VCSELs at 1528nm are realized on GaAs substrates.

Numerical investigation of a heat transfer characteristics of an impingement cooling system with non-uniform temperature on a cooled surface

NASA Astrophysics Data System (ADS)

Marzec, K.; Kucaba-Pietal, A.

2016-09-01

A series of numerical analysis have been performed to investigate heat transfer characteristics of an impingement cooling array of ten jets directed to the flat surface with different heat flux qw(x). A three-dimensional finite element model was used to solve equations of heat and mass transfer. The study focused on thermal stresses reduction on a cooled surface and aims at answering the question how the Nusselt number distribution on the cooled surface is affected by various inlet flow parameters for different heat flux distributions. The setup consists of a cylindrical plenum with an inline array of ten impingement jets. Simulation has been performed using the Computational Fluid Dynamics (CFD) code Ansys CFX. The k - ω shear stress transport (SST) turbulence model is used in calculations. The numerical analysis of the different mesh density results in good convergence of the GCI index, what excluded mesh size dependency. The physical model is simplified by using the steady state analysis and the incompressible and viscous flow of the fluid.

Growth condition dependence of photoluminescence polarization in (100) GaAs/AlGaAs quantum wells at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iba, Satoshi; Saito, Hidekazu; Yuasa, Shinji

2015-08-28

We conducted systematic measurements on the carrier lifetime (τ{sub c}), spin relaxation time (τ{sub s}), and circular polarization of photoluminescence (P{sub circ}) in (100) GaAs/AlGaAs multiple quantum wells grown by molecular beam epitaxy (MBE). The τ{sub c} values are strongly affected by MBE growth conditions (0.4–9 ns), whereas the τ{sub s} are almost constant at about 0.13 ns. The result suggests that spin detection efficiency [τ{sub s}/(τ{sub c} + τ{sub s})], which is expected to be proportional to a steady-state P{sub circ}, is largely dependent on growth condition. We confirmed that the P{sub circ} has similar dependence on growth condition to those of τ{submore » s}/(τ{sub c} + τ{sub s}) values. The study thus indicates that choosing the appropriate growth condition of the QW is indispensable for obtaining a high P{sub circ} from a spin-polarized light-emitting diode (spin-LED)« less

An analysis of errors in special sensor microwave imager evaporation estimates over the global oceans

NASA Technical Reports Server (NTRS)

Esbensen, S. K.; Chelton, D. B.; Vickers, D.; Sun, J.

1993-01-01

The method proposed by Liu (1984) is used to estimate monthly averaged evaporation over the global oceans from 1 yr of special sensor microwave imager (SDSM/I) data. Intercomparisons involving SSM/I and in situ data are made over a wide range of oceanic conditions during August 1987 and February 1988 to determine the source of errors in the evaporation estimates. The most significant spatially coherent evaporation errors are found to come from estimates of near-surface specific humidity, q. Systematic discrepancies of over 2 g/kg are found in the tropics, as well as in the middle and high latitudes. The q errors are partitioned into contributions from the parameterization of q in terms of the columnar water vapor, i.e., the Liu q/W relationship, and from the retrieval algorithm for W. The effects of W retrieval errors are found to be smaller over most of the global oceans and due primarily to the implicitly assumed vertical structures of temperature and specific humidity on which the physically based SSM/I retrievals of W are based.

Asymmetric quantum well broadband thyristor laser

NASA Astrophysics Data System (ADS)

Liu, Zhen; Wang, Jiaqi; Yu, Hongyan; Zhou, Xuliang; Chen, Weixi; Li, Zhaosong; Wang, Wei; Ding, Ying; Pan, Jiaoqing

2017-11-01

A broadband thyristor laser based on InGaAs/GaAs asymmetric quantum well (AQW) is fabricated by metal organic chemical vapor deposition (MOCVD). The 3-μm-wide Fabry-Perot (FP) ridge-waveguide laser shows an S-shape I-V characteristic and exhibits a flat-topped broadband optical spectrum coverage of ~27 nm (Δ-10 dB) at a center wavelength of ~1090 nm with a total output power of 137 mW under pulsed operation. The AQW structure was carefully designed to establish multiple energy states within, in order to broaden the gain spectrum. An obvious blue shift emission, which is not generally acquired in QW laser diodes, is observed in the broadening process of the optical spectrum as the injection current increases. This blue shift spectrum broadening is considered to result from the prominent band-filling effect enhanced by the multiple energy states of the AQW structure, as well as the optical feedback effect contributed by the thyristor laser structure. Project supported by the National Natural Science Foundation of China (Nos. 61604144, 61504137). Zhen Liu and Jiaqi Wang contributed equally to this work.

Bimodule structure of the mixed tensor product over Uq sℓ (2 | 1) and quantum walled Brauer algebra

NASA Astrophysics Data System (ADS)

Bulgakova, D. V.; Kiselev, A. M.; Tipunin, I. Yu.

2018-03-01

We study a mixed tensor product 3⊗m ⊗3 ‾ ⊗ n of the three-dimensional fundamental representations of the Hopf algebra Uq sℓ (2 | 1), whenever q is not a root of unity. Formulas for the decomposition of tensor products of any simple and projective Uq sℓ (2 | 1)-module with the generating modules 3 and 3 ‾ are obtained. The centralizer of Uq sℓ (2 | 1) on the mixed tensor product is calculated. It is shown to be the quotient Xm,n of the quantum walled Brauer algebra qw Bm,n. The structure of projective modules over Xm,n is written down explicitly. It is known that the walled Brauer algebras form an infinite tower. We have calculated the corresponding restriction functors on simple and projective modules over Xm,n. This result forms a crucial step in decomposition of the mixed tensor product as a bimodule over Xm,n ⊠Uq sℓ (2 | 1). We give an explicit bimodule structure for all m , n.

Controllable band structure and topological phase transition in two-dimensional hydrogenated arsenene

PubMed Central

Wang, Ya-ping; Ji, Wei-xiao; Zhang, Chang-wen; Li, Ping; Li, Feng; Ren, Miao-juan; Chen, Xin-Lian; Yuan, Min; Wang, Pei-ji

2016-01-01

Discovery of two-dimensional (2D) topological insulator such as group-V films initiates challenges in exploring exotic quantum states in low dimensions. Here, we perform first-principles calculations to study the geometric and electronic properties in 2D arsenene monolayer with hydrogenation (HAsH). We predict a new σ-type Dirac cone related to the px,y orbitals of As atoms in HAsH, dependent on in-plane tensile strain. Noticeably, the spin-orbit coupling (SOC) opens a quantum spin Hall (QSH) gap of 193 meV at the Dirac cone. A single pair of topologically protected helical edge states is established for the edges, and its QSH phase is confirmed with topological invariant Z2 = 1. We also propose a 2D quantum well (QW) encapsulating HAsH with the h-BN sheet on each side, which harbors a nontrivial QSH state with the Dirac cone lying within the band gap of cladding BN substrate. These findings provide a promising innovative platform for QSH device design and fabrication operating at room temperature. PMID:26839209

Precipitable water and surface humidity over global oceans from special sensor microwave imager and European Center for Medium Range Weather Forecasts

NASA Technical Reports Server (NTRS)

Liu, W. T.; Tang, Wenqing; Wentz, Frank J.

1992-01-01

Global fields of precipitable water W from the special sensor microwave imager were compared with those from the European Center for Medium Range Weather Forecasts (ECMWF) model. They agree over most ocean areas; both data sets capture the two annual cycles examined and the interannual anomalies during an ENSO episode. They show significant differences in the dry air masses over the eastern tropical-subtropical oceans, particularly in the Southern Hemisphere. In these regions, comparisons with radiosonde data indicate that overestimation by the ECMWF model accounts for a large part of the differences. As a check on the W differences, surface-level specific humidity Q derived from W, using a statistical relation, was compared with Q from the ECMWF model. The differences in Q were found to be consistent with the differences in W, indirectly validating the Q-W relation. In both W and Q, SSMI was able to discern clearly the equatorial extension of the tongues of dry air in the eastern tropical ocean, while both ECMWF and climatological fields have reduced spatial gradients and weaker intensity.

Novel α-L-arabinofuranosidase from Cellulomonas fimi ATCC 484 and its substrate-specificity analysis with the aid of computer.

PubMed

Yang, Ying; Zhang, Lujia; Guo, Mingrong; Sun, Jiaqi; Matsukawa, Shingo; Xie, Jingli; Wei, Dongzhi

2015-04-15

In the process of gene mining for novel α-L-arabinofuranosidases (AFs), the gene Celf_3321 from Cellulomonas fimi ATCC 484 encodes an AF, termed as AbfCelf, with potent activity, 19.4 U/mg under the optimum condition, pH 6.0 and 40 °C. AbfCelf can hydrolyze α-1,5-linked oligosaccharides, sugar beet arabinan, linear 1,5-α-arabinan, and wheat flour arabinoxylan, which is partly different from some previously well-characterized GH 51 AFs. The traditional substrate-specificity analysis for AFs is labor-consuming and money costing, because the substrates include over 30 kinds of various 4-nitrophenol (PNP)-glycosides, oligosaccharides, and polysaccharides. Hence, a preliminary structure and mechanism based method was applied for substrate-specificity analysis. The binding energy (ΔG, kcal/mol) obtained by docking suggested the reaction possibility and coincided with the experimental results. AbfA crystal 1QW9 was used to test the rationality of docking method in simulating the interaction between enzyme and substrate, as well the credibility of the substrate-specificity analysis method in silico.

Polystyrene Corrector Element Added to Existing Positive Acrytate for Simulator Collimator.

DTIC Science & Technology

1982-02-01

LLJ S ci n e n LA OLn LA )LnQ O O 8 C2 0 ... J in-4 V-4 -4 -4 CMcici0 Y f e wq ~ wL W U- 35 -4- Q - oq4 0r-.u a clJ m~iO f 0%C oCjrL)4 C.) 0 " I- rJC...Cj0Q P 0 w -4 4: U LA) """C (Jci -4 C~j CV) LI.I . . . . . . .I In cc Q m0 c~ wa uia o" LC o oCD l o C) % V Ln U)Ln Ln tAo 0 r- im .o r . . . ,. . .c...LA0-tw-L wL V) W 48 * 2 CA 0 4-A ’ nr . 0 -4r-4 -4 -I V- (%J 0~~~’ cOO qwL ,CjCiV4 J4 J .-C’ n r- 00 wq 4A -4 0 03. o n W n mmM- - . %D 1- " lkCC

Controllable band structure and topological phase transition in two-dimensional hydrogenated arsenene

NASA Astrophysics Data System (ADS)

Wang, Ya-Ping; Ji, Wei-Xiao; Zhang, Chang-Wen; Li, Ping; Li, Feng; Ren, Miao-Juan; Chen, Xin-Lian; Yuan, Min; Wang, Pei-Ji

2016-02-01

Discovery of two-dimensional (2D) topological insulator such as group-V films initiates challenges in exploring exotic quantum states in low dimensions. Here, we perform first-principles calculations to study the geometric and electronic properties in 2D arsenene monolayer with hydrogenation (HAsH). We predict a new σ-type Dirac cone related to the px,y orbitals of As atoms in HAsH, dependent on in-plane tensile strain. Noticeably, the spin-orbit coupling (SOC) opens a quantum spin Hall (QSH) gap of 193 meV at the Dirac cone. A single pair of topologically protected helical edge states is established for the edges, and its QSH phase is confirmed with topological invariant Z2 = 1. We also propose a 2D quantum well (QW) encapsulating HAsH with the h-BN sheet on each side, which harbors a nontrivial QSH state with the Dirac cone lying within the band gap of cladding BN substrate. These findings provide a promising innovative platform for QSH device design and fabrication operating at room temperature.

Alpha List of Prime Contract Awards. Oct 92-Sep 93. FY93. (W & G Machine Co. nc. - Zycad Corporation). Part 20

DTIC Science & Technology

1994-03-01

c.JN- W)’ " L ncqc ncn Vcn )s-4 Lii de I a I O Mow -11 " ’-I-- - - I- In- 02) o- ’-4 (()0)M (1010))n)0)) I’_ 1,- 11 # coo Ny 0 4c & cc 4 w f M -C (0(0...11<WF. ’ 0( -IN~n~n 4N.4.~404I 4 to <( I-- 0 1-- 0.1 l’- If! W(ON 1ZI D( X23v- eC >:I. z~ n > 3-> z > x XO a x De > 0 u " (0Oa I 0 0 0...0u00...0- CL CL CL U L) L) " N I wo" 00 L) 3c 0-4 W N I wo-4 NIB < w 0 -1 < ce Cie cc 0 _4 CL V Cn OD (D tn Ln I-to > rý 3c 0) LLIOC)OOO Lu Ln z qw z co11

Degradation mechanisms in high-power multi-mode InGaAs-AlGaAs strained quantum well lasers for high-reliability applications

NASA Astrophysics Data System (ADS)

Sin, Yongkun; Presser, Nathan; Brodie, Miles; Lingley, Zachary; Foran, Brendan; Moss, Steven C.

2015-03-01

Laser diode manufacturers perform accelerated multi-cell lifetests to estimate lifetimes of lasers using an empirical model. Since state-of-the-art laser diodes typically require a long period of latency before they degrade, significant amount of stress is applied to the lasers to generate failures in relatively short test durations. A drawback of this approach is the lack of mean-time-to-failure data under intermediate and low stress conditions, leading to uncertainty in model parameters (especially optical power and current exponent) and potential overestimation of lifetimes at usage conditions. This approach is a concern especially for satellite communication systems where high reliability is required of lasers for long-term duration in the space environment. A number of groups have studied reliability and degradation processes in GaAs-based lasers, but none of these studies have yielded a reliability model based on the physics of failure. The lack of such a model is also a concern for space applications where complete understanding of degradation mechanisms is necessary. Our present study addresses the aforementioned issues by performing long-term lifetests under low stress conditions followed by failure mode analysis (FMA) and physics of failure investigation. We performed low-stress lifetests on both MBE- and MOCVD-grown broad-area InGaAs- AlGaAs strained QW lasers under ACC (automatic current control) mode to study low-stress degradation mechanisms. Our lifetests have accumulated over 36,000 test hours and FMA is performed on failures using our angle polishing technique followed by EL. This technique allows us to identify failure types by observing dark line defects through a window introduced in backside metal contacts. We also investigated degradation mechanisms in MOCVD-grown broad-area InGaAs-AlGaAs strained QW lasers using various FMA techniques. Since it is a challenge to control defect densities during the growth of laser structures, we chose to control defect densities by introducing extrinsic point defects to the laser via proton irradiation with different energies and fluences. These lasers were subsequently lifetested to study degradation processes in the lasers with different defect densities and also to study precursor signatures of failures - traps and non-radiative recombination centers (NRCs) in pre- and post-stressed lasers. Lastly, we employed focused ion beam (FIB), electron beam induced current (EBIC), and highresolution TEM (HR-TEM) techniques to further study dark line defects and dislocations in both post-aged and postproton irradiated lasers. We report on our long-term low-stress lifetest results and physics of failure investigation results.

III-V compound semiconductor material characterization of microstructures and nanostructures on various optoelectronic devices with analytical transmission electron microscopy and high resolution electron microscopy

NASA Astrophysics Data System (ADS)

Zhou, Wei

Analytical Transmission Electron Microscopy (TEM) and High Resolution Electron Microscopy have been carried out to characterize microstructures and nanostructures in various III-V compound semiconductor devices by metalorganic chemical vapor deposition (MOCVD). The low-defect GaN nonplanar templates by lateral epitaxial overgrowth (LEO) has a trapezoidal cross-section with smooth (0001) and {112¯2} facets. Penetration of threading dislocations (TDs) beyond mask windows is observed in ordinary LEO substrates. In two-step LEO substrates, where TDs are engineered to bend 90° in the TD bending layer after the first LEO step, only perfect a-type dislocations with Burgers vector b = 1/3 <112¯0> are generated in the upper Post-bending layer with a density of ˜8 x 107cm-2. The demonstrated 3-dimensional dislocation spatial distribution in the LEO nonplanar substrate substantiates the dislocation reaction mechanism. Al0.07GaN/GaN superlattice can further decrease dislocations. InGaN QW thickness enhancement on top of GaN nonplanar templates has been verified to influence the optoelectronic properties significantly. Dense arrays of hexagonally ordered MOCVD-grown (In)(Ga)As nano-QDs by block copolymer nanolithography & selective area growth (SAG), approximately 20nm in diameter and 40nm apart with a density of 1011/cm 2, are perfect crystals by TEM. V-shaped defects and worse InAs growth uniformity have been observed in multiple layers of vertically coupled self-assembled InAs nanostructure arrays on strain-modulated GaAs substrates. TEM shows a smooth coalesced GaN surface with a thickness as thin as ˜200nm after Nano-LEO and a defect reduction of 70%-75%. The (In)GaAs 20 nm twist bonded compliant substrates have almost no compliant effect and higher dislocation density, but the 10nm compliant substrates are on the contrary. A 60nm oxygen-infiltrated crystallized transition layer is observed between the amorphous oxidized layer and the crystallized unoxidized aperture in Al xGa1-xAs wet lateral oxidation, potentially influencing the current confinement characteristic of the sub-micron oxide aperture. Almost no dislocation is aroused by the wet lateral oxidation of In0.52Al 0.48As in the InP microresonator waveguides. XTEM was performed to compare InP SAG regions with 10˜50mum masks, which shows the performance deterioration of laser threshold current densities in the case of 50mum mask results from high density of dislocations induced from the highly strained QW structures caused by the high enhancements.

Mechanisms of Loss in Internal Quantum Efficiency in III-Nitride-based Blue-and Green-Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Huang, Li

The overarching goals of the research conducted for this dissertation have been to understand the scientific reasons for the losses in the internal quantum efficiency (IQE) in Group III-nitride-based blue and especially green light-emitting diodes (LEDs) containing a multi-quantum well (MQW) active region and to simultaneously develop LED epitaxial structures to ameliorate these losses. The p-type AlGaN EBL was determined to be both mandatory and effective in the prevention of electron overflow from the MQW region into the p-type cladding layer and the resultant lowering of the IQE. The overflow phenomenon was partially due to the low concentration (˜ 5 x 1017 cm-3) and mobility (˜ 10 cm2/(V•s)) of the holes injected into the active region. Electroluminescence (EL) studies of LEDs without an EBL revealed a dominant emission from donor-acceptor pair recombination in the p-type GaN layer. The incorporation of a 90 nm compositionally graded In0-0.1 Ga1-0.9N buffer layer between each MQW and n-GaN cladding layer grown on an Al/SiC substrate resulted in an increase in the luminescence intensity and a blue-shift in the emission wavelength, as observed in photoluminescence (PL) spectra. The graded InGaN buffer layer reduced the stress and thus the piezoelectric field across the MQW; this improved the electron/hole overlap that, in turn, resulted in an enhanced radiative recombination rate and an increase in efficiency. A direct correlation was observed between an increase in the IQE measured in temperature-dependent PL (TDPL) and an increase in the roughness of all the upper InGaN QW/GaN barrier interfaces, as determined using cross-sectional transmission electron microscopy of the MQW. These results agreed in general with the average surface roughness values of the pit-free region on the top GaN barrier determined via atomic force microscopy and the average roughness values of all the interfaces in the MQW calculated from the FWHM of the emission peak in the PL spectra acquired at 10 K for LED structures grown on both SiC and GaN substrates. This improvement occurred as a result of carrier localization at the rougher interfaces that, in turn, resulted in shorter carrier lifetimes and faster decay rates, as determined using time-resolved PL. The peak current densities determined from the curves of external quantum efficiency as a function of current density calculated from EL spectra acquired from a set of LEDs having 3 QWs, 5 QWs, and 6 QWs were 63 A/cm2, 78 A/cm2 and 78 A/cm2, respectively. These data indicated that the minority carrier (holes) in our powered devices penetrated into at least the 4th QW from the top p-type cladding layer. The peak emission from these LEDs occurred at 522 nm. The hole density decreased with distance away from the top p-type layer. Finally, a new process route was developed in this research for the epitaxial deposition of GaN(0001) thin films on chemo-mechanically polished GaN(0001) substrates. The latter possessed threading dislocations (TDs) having a density of the order of 5 x 107 cm-2, predominantly edge in character and oriented along [0001]. Step-flow-controlled growth of the films was achieved; thus, no additional TDs were generated at the film/substrate interface. The density of V-defects in InGaN films and in subsequently grown MQWs containing In0.26Ga0.74N wells grown on the GaN substrates was also reduced to within an order of 107 cm -2. The density of the latter defects was determined to be a function of both the density of the TDs and the growth temperature when the latter was > 900 °C. (Abstract shortened by UMI.)

Comparison between global latent heat flux computed from multisensor (SSM/I and AVHRR) and from in situ data

NASA Technical Reports Server (NTRS)

Jourdan, Didier; Gautier, Catherine

1995-01-01

Comprehensive Ocean-Atmosphere Data Set (COADS) and satellite-derived parameters are input to a similarity theory-based model and treated in completely equivalent ways to compute global latent heat flux (LHF). In order to compute LHF exclusively from satellite measurements, an empirical relationship (Q-W relationship) is used to compute the air mixing ratio from Special Sensor Microwave/Imager (SSM/I) precipitable water W and a new one is derived to compute the air temperature also from retrieved W(T-W relationship). First analyses indicate that in situ and satellite LHF computations compare within 40%, but systematic errors increase the differences up to 100% in some regions. By investigating more closely the origin of the discrepancies, the spatial sampling of ship reports has been found to be an important source of error in the observed differences. When the number of in situ data records increases (more than 20 per month), the agreement is about 50 W/sq m rms (40 W/sq m rms for multiyear averages). Limitations of both empirical relationships and W retrieval errors strongly affect the LHF computation. Systematic LHF overestimation occurs in strong subsidence regions and LHF underestimation occurs within surface convergence zones and over oceanic upwelling areas. The analysis of time series of the different parameters in these regions confirms that systematic LHF discrepancies are negatively correlated with the differences between COADS and satellite-derived values of the air mixing ratio and air temperature. To reduce the systematic differences in satellite-derived LHF, a preliminary ship-satellite blending procedure has been developed for the air mixing ratio and air temperature.

Nitrate removal in stream ecosystems measured by 15N addition experiments: Total uptake

USGS Publications Warehouse

Hall, R.O.; Tank, J.L.; Sobota, D.J.; Mulholland, P.J.; O'Brien, J. M.; Dodds, W.K.; Webster, J.R.; Valett, H.M.; Poole, G.C.; Peterson, B.J.; Meyer, J.L.; McDowell, W.H.; Johnson, S.L.; Hamilton, S.K.; Grimm, N. B.; Gregory, S.V.; Dahm, Clifford N.; Cooper, L.W.; Ashkenas, L.R.; Thomas, S.M.; Sheibley, R.W.; Potter, J.D.; Niederlehner, B.R.; Johnson, L.T.; Helton, A.M.; Crenshaw, C.M.; Burgin, A.J.; Bernot, M.J.; Beaulieu, J.J.; Arangob, C.P.

2009-01-01

We measured uptake length of 15NO-3 in 72 streams in eight regions across the United States and Puerto Rico to develop quantitative predictive models on controls of NO-3 uptake length. As part of the Lotic Intersite Nitrogen eXperiment II project, we chose nine streams in each region corresponding to natural (reference), suburban-urban, and agricultural land uses. Study streams spanned a range of human land use to maximize variation in NO-3 concentration, geomorphology, and metabolism. We tested a causal model predicting controls on NO-3 uptake length using structural equation modeling. The model included concomitant measurements of ecosystem metabolism, hydraulic parameters, and nitrogen concentration. We compared this structural equation model to multiple regression models which included additional biotic, catchment, and riparian variables. The structural equation model explained 79% of the variation in log uptake length (S Wtot). Uptake length increased with specific discharge (Q/w) and increasing NO-3 concentrations, showing a loss in removal efficiency in streams with high NO-3 concentration. Uptake lengths shortened with increasing gross primary production, suggesting autotrophic assimilation dominated NO-3 removal. The fraction of catchment area as agriculture and suburban-urban land use weakly predicted NO-3 uptake in bivariate regression, and did improve prediction in a set of multiple regression models. Adding land use to the structural equation model showed that land use indirectly affected NO-3 uptake lengths via directly increasing both gross primary production and NO-3 concentration. Gross primary production shortened SWtot, while increasing NO-3 lengthened SWtot resulting in no net effect of land use on NO- 3 removal. ?? 2009.

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Fengzai; Barnard, Jonathan S.; Zhu, Tongtong

A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown tomore » be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.« less

[Thermal energy utilization analysis and energy conservation measures of fluidized bed dryer].

PubMed

Xing, Liming; Zhao, Zhengsheng

2012-07-01

To propose measures for enhancing thermal energy utilization by analyzing drying process and operation principle of fluidized bed dryers,in order to guide optimization and upgrade of fluidized bed drying equipment. Through a systematic analysis on drying process and operation principle of fluidized beds,the energy conservation law was adopted to calculate thermal energy of dryers. The thermal energy of fluidized bed dryers is mainly used to make up for thermal consumption of water evaporation (Qw), hot air from outlet equipment (Qe), thermal consumption for heating and drying wet materials (Qm) and heat dissipation to surroundings through hot air pipelines and cyclone separators. Effective measures and major approaches to enhance thermal energy utilization of fluidized bed dryers were to reduce exhaust gas out by the loss of heat Qe, recycle dryer export air quantity of heat, preserve heat for dry towers, hot air pipes and cyclone separators, dehumidify clean air in inlets and reasonably control drying time and air temperature. Such technical parameters such air supply rate, air inlet temperature and humidity, material temperature and outlet temperature and humidity are set and controlled to effectively save energy during the drying process and reduce the production cost.

Dollar Summary of Federal Supply Classification and Service Category by Company. Section 1: Supplies and Equipment. Fiscal Year 1993. (6105 Motors, Electrical, Able Inc. - 9999 Miscellaneous, Zulu Pacific Air Service). Part 2

DTIC Science & Technology

1994-03-01

W) CV) Ln C4 ý qr v 0 V m tD Ln mw qw co en CY) m Pý- CD CA CL 0 E x 0 ui 0 (D tO lD r,. rý. ej 0 Cn 0 Cj CY) (D (n Go L) W L) 0 LO CY) (Y) Cl rý m w...C " L~ 0 - -L C. L. L. s- ol U=~ M0C0 o.-0eý= G CO C- Co*-I’U rC ’U td 06 0 060 0 m 0 f’>-𔃾J (n 4- (d )O00 ŕ 0 4- ed - 4- 1’-O 0 0 0 - 05 4dS- 4...Mcc CL L) 41 CL 0 cc U) = cn u 0 c 4n td (D (n u u z w go to 0 LID = a. - I u L) U - < 0 w (D CL 0 w cn u I-- u 0 ww < I-- z 1-- 0 (n cy 4 = (D Cn L

Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection

PubMed Central

Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei

2015-01-01

Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn “photon-switches” to “OFF” state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished. PMID:25797442

Compositional and strain analysis of In(Ga)N/GaN short period superlattices

NASA Astrophysics Data System (ADS)

Dimitrakopulos, G. P.; Vasileiadis, I. G.; Bazioti, C.; Smalc-Koziorowska, J.; Kret, S.; Dimakis, E.; Florini, N.; Kehagias, Th.; Suski, T.; Karakostas, Th.; Moustakas, T. D.; Komninou, Ph.

2018-01-01

Extensive high resolution transmission and scanning transmission electron microscopy observations were performed in In(Ga)N/GaN multi-quantum well short period superlattices comprising two-dimensional quantum wells (QWs) of nominal thicknesses 1, 2, and 4 monolayers (MLs) in order to obtain a correlation between their average composition, geometry, and strain. The high angle annular dark field Z-contrast observations were quantified for such layers, regarding the indium content of the QWs, and were correlated to their strain state using peak finding and geometrical phase analysis. Image simulations taking into thorough account the experimental imaging conditions were employed in order to associate the observed Z-contrast to the indium content. Energetically relaxed supercells calculated with a Tersoff empirical interatomic potential were used as the input for such simulations. We found a deviation from the tetragonal distortion prescribed by continuum elasticity for thin films, i.e., the strain in the relaxed cells was lower than expected for the case of 1 ML QWs. In all samples, the QW thickness and strain were confined in up to 2 ML with possible indium enrichment of the immediately abutting MLs. The average composition of the QWs was quantified in the form of alloy content.

Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection.

PubMed

Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei

2015-03-23

Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn "photon-switches" to "OFF" state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished.

Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications

NASA Technical Reports Server (NTRS)

Bharatan, Sudhakar; Iyer, Shanthi; Matney, Kevin; Collis, Ward J.; Nunna Kalyan; Li, Jia; Wu, Liangjin; McGuire, Kristopher; McNeil, Laurie E.

2006-01-01

The growth and properties of GaAsSbN single quantum wells (SQWs) are investigated in this work. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy (MBE) system assisted with a RF plasma nitrogen source. A systematic study has been carried out to determine the influence of various growth conditions, such as the growth temperature and the source shutter-opening sequence, on the quality of the grown layers and the incorporation of N and Sb. The effects of ex situ and in situ annealing under As overpressure on the optical properties of the layers have also been investigated. Substrate temperature in the range of 450-470 C was found to be optimum. Simultaneous opening of the source shutters was found to yield sharper QW interfaces. N and Sb incorporations were found to depend strongly upon substrate temperatures and source shutter opening sequences. A significant increase in PL intensity with a narrowing of PL line shape and blue shift in emission energy were observed on annealing the GaAsSbN/GaAs SQW, with in situ annealing under As overpressure providing better results, compared to ex situ annealing.

Polarizability and binding energy of a shallow donor in spherical quantum dot-quantum well (QD-QW)

NASA Astrophysics Data System (ADS)

Rahmani, K.; Chrafih, Y.; M’Zred, S.; Janati, S.; Zorkani, I.; Jorio, A.; Mmadi, A.

2018-03-01

The polarizability and the binding energy is estimated for a shallow donor confined to move in inhomogeneous quantum dots (CdS/HgS/CdS). In this work, the Hass variational method within the effective mass approximation in used in the case of an infinitely deep well. The polarizability and the binding energy depend on the inner and the outer radius of the QDQW, also it depends strongly on the donor position. It’s found that the stark effect is more important when the impurity is located at the center of the (QDQW) and becomes less important when the donor moves toward the extremities of the spherical layer. When the electric field increases, the binding energy and the polarizability decreases. Its effects is more pronounced when the impurity is placed on the center of the spherical layer and decrease when the donor move toward extremities of this spherical layer. We have demonstrated the existence of a critical value {≤ft( {{{{R_1}} \\over {{R_2}}}} \\right)cri} which can be used to distinguish the tree dimension confinement from the spherical surface confinement and it’s may be important for the nanofabrication techniques.

Changes in precipitation, runoff and sediment transport in the Eastern Romania during the period 1950 to 2010

NASA Astrophysics Data System (ADS)

Maria, Radoane; Constantin, Nechita; Francisca, Chiriloaei; Nicolae, Radoane

2016-04-01

In this paper are analyzed the climatic and hydrological records from 29 meteorological stations and 48 hydrometric stations which are all overlapping on two big drainage basins (Siret and Prut) from the eastern part of Romania. To these registrations, were added information obtained on basis of more than 20 dendrochronological series collected from the entire surface of the two studied basins. In order to obtain the correlation between radial tree rings growth and climate, were used the climatic data from National Climatic Grid with spatial resolution of 10x10 km. The climatic information obtained on the analysis of dendrochronological series complete the data from the meteorological stations, especially if we consider the fact that some of the tree ages cover older periods than year 1900. Annual series of variables: temperature (T), precipitation (P), number of days from year with sunshine radiation (S) water discharge (Qw), suspended sediments (Qs) cover the time interval 1950-2010. These constitute in a well-known cascade type process of influence transmission: precipitations determine runoff which, in turn, determines erosion. The last variable from this chain - in channel transported sediments and their movement from source to delivery represents a key issue of dynamic geomorphology. The rhythm in which this process occurs may change dramatically, representing the signal of great changes in landform domain (climate changes or human interventions). Climatic, hydrological, dendrochronological time series analysis has the goal the answer the following questions: Which is the spatial variability of these series behavior? Can we identify areas with similar features of series? What factors "complicated" the cascade transmission of P → Qw → Qs variability? Can we identify common thresholds in series change and which are the causes? In Natural vs. Human competition, can we quantify their weight for considered series in the shown geographic space? Using dendrochronological analysis we will establish years with exceptional hydrological events prior to years with instrumental registrations. The obtained data will be modeled considering the known data in order to reconstruct water discharge (Q), suspended sediments (Qs) This application was elaborated for Eastern part of Romania, covered by the hydrographic basins of Siret and Prut, respectively for an area of more than 43000 km2. The conditions for geological structure, relief, land use, etc. offers the potential to better understand the spatial variability of some natural processes behavior in the last 6 decades. Also, a number of human interventions have occurred within the Siret and Prut River's drainage basins (i.e., dam construction, channelization, sediment mining, and deforestation), primarily during the past century. The history of human interventions in the area began during the twentieth century with the construction of bank protection structures, especially following the catastrophic 1970-1975 flood events. Natural reforestation, which followed several centuries of intense deforestation, has been most intense from the 1950s onward.

Comparative Analysis of Online Health Queries Originating From Personal Computers and Smart Devices on a Consumer Health Information Portal

PubMed Central

Jadhav, Ashutosh; Andrews, Donna; Fiksdal, Alexander; Kumbamu, Ashok; McCormick, Jennifer B; Misitano, Andrew; Nelsen, Laurie; Ryu, Euijung; Sheth, Amit; Wu, Stephen

2014-01-01

Background The number of people using the Internet and mobile/smart devices for health information seeking is increasing rapidly. Although the user experience for online health information seeking varies with the device used, for example, smart devices (SDs) like smartphones/tablets versus personal computers (PCs) like desktops/laptops, very few studies have investigated how online health information seeking behavior (OHISB) may differ by device. Objective The objective of this study is to examine differences in OHISB between PCs and SDs through a comparative analysis of large-scale health search queries submitted through Web search engines from both types of devices. Methods Using the Web analytics tool, IBM NetInsight OnDemand, and based on the type of devices used (PCs or SDs), we obtained the most frequent health search queries between June 2011 and May 2013 that were submitted on Web search engines and directed users to the Mayo Clinic’s consumer health information website. We performed analyses on “Queries with considering repetition counts (QwR)” and “Queries without considering repetition counts (QwoR)”. The dataset contains (1) 2.74 million and 3.94 million QwoR, respectively for PCs and SDs, and (2) more than 100 million QwR for both PCs and SDs. We analyzed structural properties of the queries (length of the search queries, usage of query operators and special characters in health queries), types of search queries (keyword-based, wh-questions, yes/no questions), categorization of the queries based on health categories and information mentioned in the queries (gender, age-groups, temporal references), misspellings in the health queries, and the linguistic structure of the health queries. Results Query strings used for health information searching via PCs and SDs differ by almost 50%. The most searched health categories are “Symptoms” (1 in 3 search queries), “Causes”, and “Treatments & Drugs”. The distribution of search queries for different health categories differs with the device used for the search. Health queries tend to be longer and more specific than general search queries. Health queries from SDs are longer and have slightly fewer spelling mistakes than those from PCs. Users specify words related to women and children more often than that of men and any other age group. Most of the health queries are formulated using keywords; the second-most common are wh- and yes/no questions. Users ask more health questions using SDs than PCs. Almost all health queries have at least one noun and health queries from SDs are more descriptive than those from PCs. Conclusions This study is a large-scale comparative analysis of health search queries to understand the effects of device type (PCs vs SDs) used on OHISB. The study indicates that the device used for online health information search plays an important role in shaping how health information searches by consumers and patients are executed. PMID:25000537

Comparative analysis of online health queries originating from personal computers and smart devices on a consumer health information portal.

PubMed

Jadhav, Ashutosh; Andrews, Donna; Fiksdal, Alexander; Kumbamu, Ashok; McCormick, Jennifer B; Misitano, Andrew; Nelsen, Laurie; Ryu, Euijung; Sheth, Amit; Wu, Stephen; Pathak, Jyotishman

2014-07-04

The number of people using the Internet and mobile/smart devices for health information seeking is increasing rapidly. Although the user experience for online health information seeking varies with the device used, for example, smart devices (SDs) like smartphones/tablets versus personal computers (PCs) like desktops/laptops, very few studies have investigated how online health information seeking behavior (OHISB) may differ by device. The objective of this study is to examine differences in OHISB between PCs and SDs through a comparative analysis of large-scale health search queries submitted through Web search engines from both types of devices. Using the Web analytics tool, IBM NetInsight OnDemand, and based on the type of devices used (PCs or SDs), we obtained the most frequent health search queries between June 2011 and May 2013 that were submitted on Web search engines and directed users to the Mayo Clinic's consumer health information website. We performed analyses on "Queries with considering repetition counts (QwR)" and "Queries without considering repetition counts (QwoR)". The dataset contains (1) 2.74 million and 3.94 million QwoR, respectively for PCs and SDs, and (2) more than 100 million QwR for both PCs and SDs. We analyzed structural properties of the queries (length of the search queries, usage of query operators and special characters in health queries), types of search queries (keyword-based, wh-questions, yes/no questions), categorization of the queries based on health categories and information mentioned in the queries (gender, age-groups, temporal references), misspellings in the health queries, and the linguistic structure of the health queries. Query strings used for health information searching via PCs and SDs differ by almost 50%. The most searched health categories are "Symptoms" (1 in 3 search queries), "Causes", and "Treatments & Drugs". The distribution of search queries for different health categories differs with the device used for the search. Health queries tend to be longer and more specific than general search queries. Health queries from SDs are longer and have slightly fewer spelling mistakes than those from PCs. Users specify words related to women and children more often than that of men and any other age group. Most of the health queries are formulated using keywords; the second-most common are wh- and yes/no questions. Users ask more health questions using SDs than PCs. Almost all health queries have at least one noun and health queries from SDs are more descriptive than those from PCs. This study is a large-scale comparative analysis of health search queries to understand the effects of device type (PCs vs. SDs) used on OHISB. The study indicates that the device used for online health information search plays an important role in shaping how health information searches by consumers and patients are executed.

Cost, Time, and Risk Assessment of Different Wave Energy Converter Technology Development Trajectories: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weber, Jochem W; Laird, Daniel; Costello, Ronan

This paper presents a comparative assessment of three fundamentally different wave energy converter technology development trajectories. The three technology development trajectories are expressed and visualised as a function of technology readiness levels and technology performance levels. The assessment shows that development trajectories that initially prioritize technology readiness over technology performance are likely to require twice the development time, consume a threefold of the development cost, and are prone to a risk of technical or commercial failure of one order of magnitude higher than those development trajectories that initially prioritize technology performance over technology readiness.

NASA's Microgravity Technology Report, 1996: Summary of Activities

NASA Technical Reports Server (NTRS)

Kierk, Isabella

1996-01-01

This report covers technology development and technology transfer activities within the Microgravity Science Research Programs during FY 1996. It also describes the recent major tasks under the Advanced Technology Development (ATD) Program and identifies current technology requirements. This document is consistent with NASA,s Enteprise for the Human Exploration and development of Space (HEDS) Strategic Plan. This annual update reflects changes in the Microgravity Science Research Program's new technology activities and requirements. Appendix A. FY 1996 Advanced Technology Development. Program and Project Descriptions. Appendix B. Technology Development.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, Young Joon; Lee, Chul -Ho; Yoo, Jinkyoung

Integration of nanostructure lighting source arrays with well-defined emission wavelengths is of great importance for optoelectronic integrated monolithic circuitry. We report on the fabrication and optical properties of GaN-based p–n junction multishell nanotube microarrays with composition-modulated nonpolar m-plane In xGa 1–xN/GaN multiple quantum wells (MQWs) integrated on c-sapphire or Si substrates. The emission wavelengths were controlled in the visible spectral range of green to violet by varying the indium mole fraction of the In xGa 1–xN MQWs in the range 0.13 ≤ x ≤ 0.36. Homogeneous emission from the entire area of the nanotube LED arrays was achieved via themore » formation of MQWs with uniform QW widths and composition by heteroepitaxy on the well-ordered nanotube arrays. Importantly, the wavelength-invariant electroluminescence emission was observed above a turn-on of 3.0 V because both the quantum-confinement Stark effect and band filling were suppressed due to the lack of spontaneous inherent electric field in the m-plane nanotube nonpolar MQWs. Lastly, the method of fabricating the multishell nanotube LED microarrays with controlled emission colors has potential applications in monolithic nonpolar photonic and optoelectronic devices on commonly used c-sapphire and Si substrates.« less

Behavioural effects of dimethyl sulfoxide (DMSO): changes in sleep architecture in rats.

PubMed

Cavas, María; Beltrán, David; Navarro, José F

2005-07-04

Dimethyl sulfoxide (DMSO) is an efficient solvent for water-insoluble compounds, widely used in biological studies and as a vehicle for drug therapy, but few data on its neurotoxic or behavioural effects is available. The aim of this work is to explore DMSO's effects upon sleep/wake states. Twenty male rats were sterotaxically prepared for polysomnography. Four concentrations of DMSO (5%, 10%, 15%, and 20%, in saline) were examined. DMSO or saline were administered intraperitoneally at the beginning of the light period. Three hours of polygraphic recording were evaluated for stages of vigilance after treatment. Sleep/wake parameters and EEG power spectral analyses during sleep were investigated. Results show no significant effect after 5% or 10% DMSO treatment. DMSO 15% increased mean episode duration of light slow wave sleep (SWS), decreasing mean episode duration of deep SWS and of quiet wake (QW). DMSO 20% increased light SWS enhancing number of episodes, while decreased deep SWS mean episode duration. EEG power spectra of sigma and delta activity were also affected by DMSO. Therefore, DMSO at 15% and 20% affects sleep architecture in rats, increasing light SWS and reducing deep SWS. Being aware of DMSO behavioural effects seems important since experimental artefacts caused by DMSO can lead to the erroneous interpretation of results.

Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs /GaAs single quantum well structures

NASA Astrophysics Data System (ADS)

Chen, T. H.; Huang, Y. S.; Lin, D. Y.; Tiong, K. K.

2004-12-01

Ga0.69In0.31NxAs1-x/GaAs single quantum well (SQW) structures with three different nitrogen compositions ( x =0%, 0.6%, and 0.9%) have been characterized, as functions of temperature in the range 10-300K, by the techniques of photoreflectance (PR) and photoluminescence (PL). In PR spectra, clear Franz-Keldysh oscillations (FKOs) above the GaAs band edge and the various excitonic transitions originating from the QW region have been observed. The built-in electric field in the SQW has been determined from FKOs and found to increase with N concentration. The PR signal has been found to decrease for nitrogen incorporated samples when the temperature was lowered due to a weakening of the modulation efficiency induced by carrier localization. A careful analysis of PR and PL spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The anomalous temperature dependent 11H transition energy and linewidth observed in the PL spectra have been explained as originating from the localized states as a result of nitrogen incorporation. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the interband transitions.

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes.

PubMed

Robin, Y; Bae, S Y; Shubina, T V; Pristovsek, M; Evropeitsev, E A; Kirilenko, D A; Davydov, V Yu; Smirnov, A N; Toropov, A A; Jmerik, V N; Kushimoto, M; Nitta, S; Ivanov, S V; Amano, H

2018-05-09

We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown on patterned substrates by metal-organic vapor phase epitaxy. The multi-bands emission of the LEDs covers nearly the whole visible region, including UV, blue, green, and orange ranges. The intensity of each emission is strongly dependent on the current density, however the LEDs demonstrate a rather low color saturation. Based on transmission electron microscopy data and comparing them with electroluminescence and photoluminescence spectra measured at different excitation powers and temperatures, we could identify the spatial origination of each of the emission bands. We show that their wavelengths and intensities are governed by different thicknesses of the QWs grown on different crystal facets of the NRs as well as corresponding polarization-induced electric fields. Also the InGaN incorporation strongly varies along the NRs, increasing at their tips and corners, which provides the red shift of emission. With increasing the current, the different QW regions are activated successively from the NR tips to the side-walls, resulting in different LED colors. Our findings can be used as a guideline to design effectively emitting multi-color NR-LEDs.

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

NASA Astrophysics Data System (ADS)

Morawiec, Seweryn; Sarzała, Robert P.; Nakwaski, Włodzimierz

2013-11-01

Polarization effects are studied within nitride light-emitting diodes (LEDs) manufactured on standard polar and semipolar substrates. A new theoretical approach, somewhat different than standard ones, is proposed to this end. It is well known that when regular polar GaN substrates are used, strong piezoelectric and spontaneous polarizations create built-in electric fields leading to the quantum-confined Stark effects (QCSEs). These effects may be completely avoided in nonpolar crystallographic orientations, but then there are problems with manufacturing InGaN layers of relatively high Indium contents necessary for the green emission. Hence, a procedure leading to partly overcoming these polarization problems in semi-polar LEDs emitting green radiation is proposed. The (11 22) crystallographic substrate orientation (inclination angle of 58∘ to c plane) seems to be the most promising because it is characterized by low Miller-Bravais indices leading to high-quality and high Indium content smooth growth planes. Besides, it makes possible an increased Indium incorporation efficiency and it is efficient in suppressing QCSE. The In0.3Ga0.7N/GaN QW LED grown on the semipolar (11 22) substrate has been found as currently the optimal LED structure emitting green radiation.

Doping-Induced Interband Gain in InAs/AlSb Quantum Wells

NASA Technical Reports Server (NTRS)

Kolokolov, K. I.; Ning, C. Z.

2005-01-01

A paper describes a computational study of effects of doping in a quantum well (QW) comprising a 10-nm-thick layer of InAs sandwiched between two 21-nm-thick AlSb layers. Heretofore, InAs/AlSb QWs have not been useful as interband gain devices because they have type-II energy-band-edge alignment, which causes spatial separation of electrons and holes, thereby leading to weak interband dipole matrix elements. In the doping schemes studied, an interior sublayer of each AlSb layer was doped at various total areal densities up to 5 X 10(exp 12) / square cm. It was found that (1) proper doping converts the InAs layer from a barrier to a well for holes, thereby converting the heterostructure from type II to type I; (2) the resultant dipole matrix elements and interband gains are comparable to those of typical type-I heterostructures; and (3) dipole moments and optical gain increase with the doping level. Optical gains in the transverse magnetic mode can be almost ten times those of other semiconductor material systems in devices used to generate medium-wavelength infrared (MWIR) radiation. Hence, doped InAs/AlSb QWs could be the basis of an alternative material system for devices to generate MWIR radiation.

Determination of composition of non-homogeneous GaInNAs layers

NASA Astrophysics Data System (ADS)

Pucicki, D.; Bielak, K.; Ściana, B.; Radziewicz, D.; Latkowska-Baranowska, M.; Kováč, J.; Vincze, A.; Tłaczała, M.

2016-01-01

Dilute nitride GaInNAs alloys grown on GaAs have become perspective materials for so called low-cost GaAs-based devices working within the optical wavelength range up to 1.6 μm. The multilayer structures of GaInNAs/GaAs multi-quantum well (MQW) samples usually are analyzed by using high resolution X-ray diffraction (HRXRD) measurements. However, demands for precise structural characterization of the GaInNAs containing heterostructures requires taking into consideration all inhomogeneities of such structures. This paper describes some of the material challenges and progress in structural characterization of GaInNAs layers. A new algorithm for structural characterization of dilute nitrides which bounds contactless electro-reflectance (CER) or photo-reflectance (PR) measurements and HRXRD analysis results together with GaInNAs quantum well band diagram calculation is presented. The triple quantum well (3QW) GaInNAs/GaAs structures grown by atmospheric-pressure metalorganic vapor-phase epitaxy (AP-MOVPE) were investigated according to the proposed algorithm. Thanks to presented algorithm, more precise structural data including the nonuniformity in the growth direction of GaInNAs/GaAs QWs were achieved. Therefore, the proposed algorithm is mentioned as a nondestructive method for characterization of multicomponent inhomogeneous semiconductor structures with quantum wells.

Cavity Exciton-Polariton mediated, Single-Shot Quantum Non-Demolition measurement of a Quantum Dot Electron Spin

NASA Astrophysics Data System (ADS)

Puri, Shruti; McMahon, Peter; Yamamoto, Yoshihisa

2014-03-01

The quantum non-demolition (QND) measurement of a single electron spin is of great importance in measurement-based quantum computing schemes. The current single-shot readout demonstrations exhibit substantial spin-flip backaction. We propose a QND readout scheme for quantum dot (QD) electron spins in Faraday geometry, which differs from previous proposals and implementations in that it relies on a novel physical mechanism: the spin-dependent Coulomb exchange interaction between a QD spin and optically-excited quantum well (QW) microcavity exciton-polaritons. The Coulomb exchange interaction causes a spin-dependent shift in the resonance energy of the polarized polaritons, thus causing the phase and intensity response of left circularly polarized light to be different to that of the right circularly polarized light. As a result the QD electron's spin can be inferred from the response to a linearly polarized probe. We show that by a careful design of the system, any spin-flip backaction can be eliminated and a QND measurement of the QD electron spin can be performed within a few 10's of nanoseconds with fidelity 99:95%. This improves upon current optical QD spin readout techniques across multiple metrics, including fidelity, speed and scalability. National Institute of Informatics, 2-1-2 Hitotsubashi, Chiyoda-ku, Tokyo 101-8430, Japan.

Tidal dissipation in a viscoelastic planet

NASA Technical Reports Server (NTRS)

Ross, M.; Schubert, G.

1986-01-01

Tidal dissipation is examined using Maxwell standard liner solid (SLS), and Kelvin-Voigt models, and viscosity parameters are derived from the models that yield the amount of dissipation previously calculated for a moon model with QW = 100 in a hypothetical orbit closer to the earth. The relevance of these models is then assessed for simulating planetary tidal responses. Viscosities of 10 exp 14 and 10 ex 18 Pa s for the Kelvin-Voigt and Maxwell rheologies, respectively, are needed to match the dissipation rate calculated using the Q approach with a quality factor = 100. The SLS model requires a short time viscosity of 3 x 10 exp 17 Pa s to match the Q = 100 dissipation rate independent of the model's relaxation strength. Since Q = 100 is considered a representative value for the interiors of terrestrial planets, it is proposed that derived viscosities should characterize planetary materials. However, it is shown that neither the Kelvin-Voigt nor the SLS models simulate the behavior of real planetary materials on long time scales. The Maxwell model, by contrast, behaves realistically on both long and short time scales. The inferred Maxwell viscosity, corresponding to the time scale of days, is several times smaller than the longer time scale (greater than or equal to 10 exp 14 years) viscosity of the earth's mantle.

Above room temperature operation of InGaAs/AlGaAs/GaAs quantum cascade lasers

NASA Astrophysics Data System (ADS)

Pierścińska, D.; Gutowski, P.; Hałdaś, G.; Kolek, A.; Sankowska, I.; Grzonka, J.; Mizera, J.; Pierściński, K.; Bugajski, M.

2018-03-01

In this work we report on the performance of mid-infrared quantum cascade lasers (QCLs) based on strained InGaAs/AlGaAs grown by molecular beam epitaxy on GaAs substrate. Structures were grown with indium content from 1% to 6% in GaAs quantum wells (QW) and 45% of Al in AlGaAs barrier layers. The design results in strained heterostructure, however, no strain relaxation was observed as documented by x-ray diffraction measurements up to ∼3% of In content in QWs. The investigation of heterostructures and devices was performed, including structural measurements and electrooptical characterization of devices. Devices fabricated from epi wafers with 2.64% of In exhibited performance largely improved over GaAs/AlGaAs QCLs. Roughly two times reduction of the threshold current density was observed at lasing wavelength ∼9.45 μm. The lasers operated in pulsed mode up to T = 50 °C with characteristic temperature T 0 = 115 K. The decrease of the threshold current density has been mainly attributed to the reduction of interface roughness scattering and the increase of activation energy for the escape of carriers from the upper laser level to the 3D continuum. Further increase of In content in QWs resulted in the deterioration of device parameters.

NASA/Goddard Thermal Technology Overview 2014

NASA Technical Reports Server (NTRS)

Butler, Daniel; Swanson, Theodore D.

2014-01-01

This presentation summarizes the current plans and efforts at NASA Goddard to develop new thermal control technology for anticipated future missions. It will also address some of the programmatic developments currently underway at NASA, especially with respect to the Technology Development Program at NASA. While funding for basic technology development is still scarce, significant efforts are being made in direct support of flight programs. New technology development continues to be driven by the needs of future missions, and applications of these technologies to current Goddard programs will be addressed. Many of these technologies also have broad applicability to DOD, DOE, and commercial programs. Partnerships have been developed with the Air Force, Navy, and various universities to promote technology development. In addition, technology development activities supported by internal research and development (IRAD) program, the Small Business Innovative Research (SBIR) program, and the NASA Engineering and Safety Center (NESC), are reviewed in this presentation. Specific technologies addressed include; two-phase systems applications and issues on NASA missions, latest developments of electro-hydrodynamically pumped systems, development of high electrical conductivity coatings, and various other research activities. New Technology program underway at NASA, although funding is limited center dot NASA/GSFC's primary mission of science satellite development is healthy and vibrant, although new missions are scarce - now have people on overhead working new missions and proposals center dot Future mission applications promise to be thermally challenging center dot Direct technology funding is still very restricted - Projects are the best source for direct application of technology - SBIR thermal subtopic resurrected in FY 14 - Limited Technology development underway via IRAD, NESC, other sources - Administrator pushing to revive technology and educational programs at NASA - new HQ directorate established

Technology CAD for integrated circuit fabrication technology development and technology transfer

NASA Astrophysics Data System (ADS)

Saha, Samar

2003-07-01

In this paper systematic simulation-based methodologies for integrated circuit (IC) manufacturing technology development and technology transfer are presented. In technology development, technology computer-aided design (TCAD) tools are used to optimize the device and process parameters to develop a new generation of IC manufacturing technology by reverse engineering from the target product specifications. While in technology transfer to manufacturing co-location, TCAD is used for process centering with respect to high-volume manufacturing equipment of the target manufacturing equipment of the target manufacturing facility. A quantitative model is developed to demonstrate the potential benefits of the simulation-based methodology in reducing the cycle time and cost of typical technology development and technology transfer projects over the traditional practices. The strategy for predictive simulation to improve the effectiveness of a TCAD-based project, is also discussed.

A summary of the status of biomass conversion technologies and opportunities for their use in developing countries

NASA Astrophysics Data System (ADS)

Waddle, D. B.; Perlack, R. D.; Wimberly, J.

Biomass plays a significant role in energy use in developing countries: however, these resources are often used very inefficiently. Recent technology developments have made possible improved conversion efficiencies for utility scale technologies. These developments may be of interest in the wake of recent policy changes occurring in several developing countries, with respect to independent power production. Efforts are also being directed at developing biomass conversion technologies that can interface and/or compete with internal combustion engines for small, isolated loads. The technological status is reviewed of biomass conversion technologies appropriate for commercial, industrial, and small utility applications in developing countries. Market opportunities, constraints, and technology developments are also discussed.

Technology Estimating 2: A Process to Determine the Cost and Schedule of Space Technology Research and Development

NASA Technical Reports Server (NTRS)

Cole, Stuart K.; Wallace, Jon; Schaffer, Mark; May, M. Scott; Greenberg, Marc W.

2014-01-01

As a leader in space technology research and development, NASA is continuing in the development of the Technology Estimating process, initiated in 2012, for estimating the cost and schedule of low maturity technology research and development, where the Technology Readiness Level is less than TRL 6. NASA' s Technology Roadmap areas consist of 14 technology areas. The focus of this continuing Technology Estimating effort included four Technology Areas (TA): TA3 Space Power and Energy Storage, TA4 Robotics, TA8 Instruments, and TA12 Materials, to confine the research to the most abundant data pool. This research report continues the development of technology estimating efforts completed during 2013-2014, and addresses the refinement of parameters selected and recommended for use in the estimating process, where the parameters developed are applicable to Cost Estimating Relationships (CERs) used in the parametric cost estimating analysis. This research addresses the architecture for administration of the Technology Cost and Scheduling Estimating tool, the parameters suggested for computer software adjunct to any technology area, and the identification of gaps in the Technology Estimating process.

The Development of III-V Semiconductor MOSFETs for Future CMOS Applications

NASA Astrophysics Data System (ADS)

Greene, Andrew M.

Alternative channel materials with superior transport properties over conventional strained silicon are required for supply voltage scaling in low power complementary metal-oxide-semiconductor (CMOS) integrated circuits. Group III-V compound semiconductor systems offer a potential solution due to their high carrier mobility, low carrier effective mass and large injection velocity. The enhancement in transistor drive current at a lower overdrive voltage allows for the scaling of supply voltage while maintaining high switching performance. This thesis focuses on overcoming several material and processing challenges associated with III-V semiconductor development including a low thermal processing budget, high interface trap state density (Dit), low resistance source/drain contacts and growth on lattice mismatched substrates. Non-planar In0.53Ga0.47As FinFETs were developed using both "gate-first" and "gate-last" fabrication methods for n-channel MOSFETs. Electron beam lithography and anisotropic plasma etching processes were optimized to create highly scaled fins with near vertical sidewalls. Plasma damage was removed using a wet etch process and improvements in gate efficiency were characterized on MOS capacitor structures. A two-step, selective removal of the pre-grown n+ contact layer was developed for "gate-last" recess etching. The final In0.53Ga 0.47As FinFET devices demonstrated an ION = 70 mA/mm, I ON/IOFF ratio = 15,700 and sub-threshold swing = 210 mV/dec. Bulk GaSb and strained In0.36Ga0.64Sb quantum well (QW) heterostructures were developed for p-channel MOSFETs. Dit was reduced to 2 - 3 x 1012 cm-2eV-1 using an InAs surface layer, (NH4)2S passivation and atomic layer deposition (ALD) of Al2O3. A self-aligned "gate-first" In0.36Ga0.64Sb MOSFET fabrication process was invented using a "T-shaped" electron beam resist patterning stack and intermetallic source/drain contacts. Ni contacts annealed at 300°C demonstrated an ION = 166 mA/mm, ION/IOFF ratio = 1,500 and sub-threshold swing = 340 mV/dec. Split C-V measurements were used to extract an effective channel mobility of muh* = 300 cm2/Vs at Ns = 2 x 1012 cm -2. "Gate-last" MOSFETs grown with an epitaxial p + contact layer were fabricated using selective gate-recess etching techniques. A parasitic "n-channel" limited ION/I OFF ratio and sub-threshold swing, most likely due to effects from the InAs surface layer.

A study of mass data storage technology for rocket engine data

NASA Technical Reports Server (NTRS)

Ready, John F.; Benser, Earl T.; Fritz, Bernard S.; Nelson, Scott A.; Stauffer, Donald R.; Volna, William M.

1990-01-01

The results of a nine month study program on mass data storage technology for rocket engine (especially the Space Shuttle Main Engine) health monitoring and control are summarized. The program had the objective of recommending a candidate mass data storage technology development for rocket engine health monitoring and control and of formulating a project plan and specification for that technology development. The work was divided into three major technical tasks: (1) development of requirements; (2) survey of mass data storage technologies; and (3) definition of a project plan and specification for technology development. The first of these tasks reviewed current data storage technology and developed a prioritized set of requirements for the health monitoring and control applications. The second task included a survey of state-of-the-art and newly developing technologies and a matrix-based ranking of the technologies. It culminated in a recommendation of optical disk technology as the best candidate for technology development. The final task defined a proof-of-concept demonstration, including tasks required to develop, test, analyze, and demonstrate the technology advancement, plus an estimate of the level of effort required. The recommended demonstration emphasizes development of an optical disk system which incorporates an order-of-magnitude increase in writing speed above the current state of the art.

An Analysis of the Relationship between Professional Development, School Leadership, Technology Infrastructure, and Technology Use

ERIC Educational Resources Information Center

Mishnick, Nicole

2017-01-01

This dissertation study investigates the relationship between professional development, school leadership, technology infrastructure and technology use. Three research questions were developed. The first examines the relationship between professional development and technology use, the second examines the relationship between school leadership and…

The Status of Spacecraft Bus and Platform Technology Development Under the NASA ISPT Program

NASA Technical Reports Server (NTRS)

Anderson, David; Munk, Michelle M.; Pencil, Eric; Dankanich, John; Glaab, Louis; Peterson, Todd

2014-01-01

The In-Space Propulsion Technology (ISPT) program is developing spacecraft bus and platform technologies that will enable or enhance NASA robotic science missions. The ISPT program is currently developing technology in three areas that include Propulsion System Technologies, Entry Vehicle Technologies, and Systems Mission Analysis. ISPTs propulsion technologies include: 1) NASAs Evolutionary Xenon Thruster (NEXT) ion propulsion system, a 0.6-7 kW throttle-able gridded ion system; 2) a Hall-effect electric propulsion (HEP) system for sample return and low cost missions; 3) the Advanced Xenon Flow Control System (AXFS); ultra-lightweight propellant tank technologies (ULTT); and propulsion technologies for a Mars Ascent Vehicle (MAV). The AXFS and ULTT are two component technologies being developed with nearer-term flight infusion in mind, whereas NEXT and the HEP are being developed as EP systems. ISPTs entry vehicle technologies are: 1) Aerocapture technology development with investments in a family of thermal protection system (TPS) materials and structures; guidance, navigation, and control (GNC) models of blunt-body rigid aeroshells; and aerothermal effect models; and 2) Multi-mission technologies for Earth Entry Vehicles (MMEEV) for sample return missions. The Systems Mission Analysis area is focused on developing tools and assessing the application of propulsion, entry vehicle, and spacecraft bus technologies to a wide variety of mission concepts. Several of the ISPT technologies are related to sample return missions and other spacecraft bus technology needs like: MAV propulsion, MMEEV, and electric propulsion. These technologies, as well as Aerocapture, are more vehicle and mission-focused, and present a different set of technology development challenges. These in-space propulsion technologies are applicable, and potentially enabling for future NASA Discovery, New Frontiers, Flagship and sample return missions currently under consideration. This paper provides a brief overview of the ISPT program, describing the development status and technology infusion readiness.

A novel technology coupling extraction and foam fractionation for separating the total saponins from Achyranthes bidentata.

PubMed

Ding, Linlin; Wang, Yanji; Wu, Zhaoliang; Liu, Wei; Li, Rui; Wang, Yanyan

2016-10-02

A novel technology coupling extraction and foam fractionation was developed for separating the total saponins from Achyranthes bidentata. In the developed technology, the powder of A. bidentata was loaded in a nylon filter cloth pocket with bore diameter of 180 µm. The pocket was fixed in the bulk liquid phase for continuously releasing saponins. Under the optimal conditions, the concentration and the extraction rate of the total saponins in the foamate by the developed technology were 73.5% and 416.2% higher than those by the traditional technology, respectively. The foamates obtained by the traditional technology and the developed technology were analyzed by ultraperformance liquid chromatography-mass spectrometry to determine their ingredients, and the results appeared that the developed technology exhibited a better performance for separating saponins than the traditional technology. The study is expected to develop a novel technology for cost effectively separating plant-derived materials with surface activity.

NASA Goddard Thermal Technology Overview 2018

NASA Technical Reports Server (NTRS)

Butler, Dan; Swanson, Ted

2018-01-01

This presentation summarizes the current plans and efforts at NASA/Goddard to develop new thermal control technology for anticipated future missions. It will also address some of the programmatic developments currently underway at NASA, especially with respect to the NASA Technology Development Program. The effects of the recently submitted NASA budget will also be addressed. While funding for basic technology development is still tight, significant efforts are being made in direct support of flight programs. Thermal technology Implementation on current flight programs will be reviewed, and the recent push for Cube-sat mission development will also be addressed. Many of these technologies also have broad applicability to DOD, DOE, and commercial programs. Partnerships have been developed with the Air Force, Navy, and various universities to promote technology development. In addition, technology development activities supported by internal research and development (IRAD) program and the Small Business Innovative Research (SBIR) program are reviewed in this presentation. Specific technologies addressed include; two-phase systems applications and issues on NASA missions, latest developments of thermal control coatings, Atomic Layer Deposition (ALD), Micro-scale Heat Transfer, and various other research activities.

Appropriate strategies.

PubMed

Halty, M

1979-01-01

Technology strategies are concerned with the production, distribution, and consumption of technology. Observation of less developed countries (LDCs) and international organizations shows that little attention is given to the development of a technology strategy. LDCs need to formulate a strategy of self-reliant technological development for the next decade. They should no longer be content to stand in a technologically dependent relationship to the developed countries. Such strategies must balance the ratio between investment in indigenous technologies and expenditure for foreign technology. The strategies change according to the level of industrialization achieved. The following considerations come into development of technology strategies: 1) determination of an appropriate balance among the accumulation, consumption, and distribution of technology; 2) the amount and level of government support; and 3) the balance between depth and breadth of technology to be encouraged.

One chip at a time: using technology to enhance youth development.

PubMed

Cohall, Alwyn; Nshom, Montsine; Nye, Andrea

2007-08-01

Youth development programs have the potential to positively impact psychosocial growth and maturation in young adults. Several youth development programs are capitalizing on youths' natural gravitation toward technology as well. Research has shown that youth view technology and technologic literacy as positive and empowering, and that youth who master technology have increased self-esteem and better socioeconomic prospects than their counterparts. Technology-centered youth development programs offer a unique opportunity to engage youth, thereby extending their social networks, enhancing their access to information, building their self-esteem, and improving their self-efficacy. This article provides an overview of the intersection between youth development and technology and illustrates the ways technology can be used as a cutting-edge tool for youth development.

Mirror Technology Development for The International X-Ray Observatory Mission

NASA Technical Reports Server (NTRS)

Zhang, Will

2010-01-01

Presentation slides include: International X-ray Observatory (IXO), Lightweight and High Resolution X-ray Optics is Needed; Modular Design of Mirror Assembly, IXO Mirror Technology Development Objectives, Focus of Technology Development, Slumping - Status, Mirror Fabrication Progress, Temporary Bonding - Status, Alignment - Status, Permanent Bonding - Status, Mirror Housing Simulator (MHS) - TRL-4, Mini-Module (TRL-5), Flight-Like Module (TRL-6), Mirror Technology Development Team, Outlook, and Small Technology Firms that Have Made Direct Contributions to IXO Mirror Technology Development.

Mission oriented R and D and the advancement of technology: The imapct of NASA contributions, volume 1

NASA Technical Reports Server (NTRS)

Robbins, M. D.; Kelley, J. A.; Elliott, L.

1972-01-01

The contributions of NASA to the advancement of major developments in several selected fields of technology are identified. Subjects discussed are: (1) developing new knowledge, (2) developing new technology, (3) demonstrating the application of new technology for the first time, (4) augmenting existing technology, (5) applying existing technology in a new context, (6) stimulating industry to acquire or develop new technology, (7) identifying problem areas requiring further research, and (8) creating new markets.

A summary of the status of biomass conversion technologies and opportunities for their use in developing countries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waddle, D.B.; Perlack, R.D.; Wimberly, J.

1990-01-01

Biomass plays a significant role in energy use in developing countries: however, these resources are often used very inefficiently. Recent technology developments have made possible improved conversion efficiencies for utility scale technologies. These developments may be of interest in the wake of recent policy changes occurring in several developing countries, with respect to independent power production. Efforts are also being directed at developing biomass conversion technologies that can interface and/or compete with internal combustion engines for small, isolated loads. This paper reviews the technological status of biomass conversion technologies appropriate for commercial, industrial, and small utility applications in developing countries.more » Market opportunities, constraints, and technology developments are also discussed. 25 refs., 1 fig., 1 tab.« less

An On-Line Technology Information System (OTIS) for Advanced Life Support

NASA Technical Reports Server (NTRS)

Levri, Julie A.; Boulanger, Richard; Hoganm John A.; Rodriquez, Luis

2003-01-01

An On-line Technology Information System (OTIS) is currently being developed for the Advanced Life Support (ALS) Program. This paper describes the preliminary development of OTIS, which is a system designed to provide centralized collection and organization of technology information. The lack of thorough, reliable and easily understood technology information is a major obstacle in effective assessment of technology development progress, trade studies, metric calculations, and technology selection for integrated testing. OTIS will provide a formalized, well-organized protocol to communicate thorough, accurate, current and relevant technology information between the hands-on technology developer and the ALS Community. The need for this type of information transfer system within the Solid Waste Management (SWM) element was recently identified and addressed. A SWM Technology Information Form (TIF) was developed specifically for collecting detailed technology information in the area of SWM. In the TIF, information is requested from SWM technology developers, based upon the Technology Readiness Level (TRL). Basic information is requested for low-TRL technologies, and more detailed information is requested as the TRL of the technology increases. A comparable form is also being developed for the wastewater processing element. In the future, similar forms will also be developed for the ALS elements of air revitalization, food processing, biomass production and thermal control. These ALS element-specific forms will be implemented in OTIS via a web-accessible interface,with the data stored in an object-oriented relational database (created in MySQLTM) located on a secure server at NASA Ames Research Center. With OTIS, ALS element leads and managers will be able to carry out informed research and development investment, thereby promoting technology through the TRL scale. OTIS will also allow analysts to make accurate evaluations of technology options. Additionally, the range and specificity of information solicited will help educate technology developers of programmatic needs.

Ares Project Technology Assessment: Approach and Tools

NASA Technical Reports Server (NTRS)

Hueter, Uwe; Tyson, Richard

2010-01-01

Technology assessments provide a status of the development maturity of specific technologies. Along with benefit analysis, the risks the project assumes can be quantified. Normally due to budget constraints, the competing technologies are prioritized and decisions are made which ones to fund. A detailed technology development plan is produced for the selected technologies to provide a roadmap to reach the desired maturity by the project s critical design review. Technology assessments can be conducted for both technology only tasks or for product development programs. This paper is primarily biased toward the product development programs. The paper discusses the Ares Project s approach to technology assessment. System benefit analysis, risk assessment, technology prioritization, and technology readiness assessment are addressed. A description of the technology readiness level tool being used is provided.

78 FR 17418 - Rural Health Information Technology Network Development Grant

Federal Register 2010, 2011, 2012, 2013, 2014

2013-03-21

... Information Technology Network Development Grant AGENCY: Health Resources and Services Administration (HRSA...-competitive replacement award under the Rural Health Information Technology Network Development Grant (RHITND... relinquishing its fiduciary responsibilities for the Rural Health Information Technology Network Development...

Method for technology-delivered healthcare measures.

PubMed

Kramer-Jackman, Kelli Lee; Popkess-Vawter, Sue

2011-12-01

Current healthcare literature lacks development and evaluation methods for research and practice measures administered by technology. Researchers with varying levels of informatics experience are developing technology-delivered measures because of the numerous advantages they offer. Hasty development of technology-delivered measures can present issues that negatively influence administration and psychometric properties. The Method for Technology-delivered Healthcare Measures is designed to systematically guide the development and evaluation of technology-delivered measures. The five-step Method for Technology-delivered Healthcare Measures includes establishment of content, e-Health literacy, technology delivery, expert usability, and participant usability. Background information and Method for Technology-delivered Healthcare Measures steps are detailed.

Software Engineering Research/Developer Collaborations in 2005

NASA Technical Reports Server (NTRS)

Pressburger, Tom

2006-01-01

In CY 2005, three collaborations between software engineering technology providers and NASA software development personnel deployed three software engineering technologies on NASA development projects (a different technology on each project). The main purposes were to benefit the projects, infuse the technologies if beneficial into NASA, and give feedback to the technology providers to improve the technologies. Each collaboration project produced a final report. Section 2 of this report summarizes each project, drawing from the final reports and communications with the software developers and technology providers. Section 3 indicates paths to further infusion of the technologies into NASA practice. Section 4 summarizes some technology transfer lessons learned. Also included is an acronym list.

Technology for small spacecraft

NASA Technical Reports Server (NTRS)

1994-01-01

This report gives the results of a study by the National Research Council's Panel on Small Spacecraft Technology that reviewed NASA's technology development program for small spacecraft and assessed technology within the U.S. government and industry that is applicable to small spacecraft. The panel found that there is a considerable body of advanced technology currently available for application by NASA and the small spacecraft industry that could provide substantial improvement in capability and cost over those technologies used for current NASA small spacecraft. These technologies are the result of developments by commercial companies, Department of Defense agencies, and to a lesser degree NASA. The panel also found that additional technologies are being developed by these same entities that could provide additional substantial improvement if development is successfully completed. Recommendations for future technology development efforts by NASA across a broad technological spectrum are made.

Sensors 2000! Program: Advanced Biosensor and Measurement Systems Technologies for Spaceflight Research and Concurrent, Earth-Based Applications

NASA Technical Reports Server (NTRS)

Hines, J.

1999-01-01

Sensors 2000! (S2K!) is a specialized, integrated projects team organized to provide focused, directed, advanced biosensor and bioinstrumentation systems technology support to NASA's spaceflight and ground-based research and development programs. Specific technology thrusts include telemetry-based sensor systems, chemical/ biological sensors, medical and physiological sensors, miniaturized instrumentation architectures, and data and signal processing systems. A concurrent objective is to promote the mutual use, application, and transition of developed technology by collaborating in academic-commercial-govemment leveraging, joint research, technology utilization and commercialization, and strategic partnering alliances. Sensors 2000! is organized around three primary program elements: Technology and Product Development, Technology infusion and Applications, and Collaborative Activities. Technology and Product Development involves development and demonstration of biosensor and biotelemetry systems for application to NASA Space Life Sciences Programs; production of fully certified spaceflight hardware and payload elements; and sensor/measurement systems development for NASA research and development activities. Technology Infusion and Applications provides technology and program agent support to identify available and applicable technologies from multiple sources for insertion into NASA's strategic enterprises and initiatives. Collaborative Activities involve leveraging of NASA technologies with those of other government agencies, academia, and industry to concurrently provide technology solutions and products of mutual benefit to participating members.

The Status of Spacecraft Bus and Platform Technology Development under the NASA ISPT Program

NASA Technical Reports Server (NTRS)

Anderson, David J.; Munk, Michelle M.; Pencil, Eric; Dankanich, John; Glaab, Louis; Peterson, Todd

2013-01-01

The In-Space Propulsion Technology (ISPT) program is developing spacecraft bus and platform technologies that will enable or enhance NASA robotic science missions. The ISPT program is currently developing technology in four areas that include Propulsion System Technologies (electric and chemical), Entry Vehicle Technologies (aerocapture and Earth entry vehicles), Spacecraft Bus and Sample Return Propulsion Technologies (components and ascent vehicles), and Systems/Mission Analysis. Three technologies are ready for near-term flight infusion: 1) the high-temperature Advanced Material Bipropellant Rocket (AMBR) engine providing higher performance; 2) NASA s Evolutionary Xenon Thruster (NEXT) ion propulsion system, a 0.6-7 kW throttle-able gridded ion system; and 3) Aerocapture technology development with investments in a family of thermal protection system (TPS) materials and structures; guidance, navigation, and control (GN&C) models of blunt-body rigid aeroshells; and aerothermal effect models. Two component technologies being developed with flight infusion in mind are the Advanced Xenon Flow Control System and ultralightweight propellant tank technologies. Future directions for ISPT are technologies that relate to sample return missions and other spacecraft bus technology needs like: 1) Mars Ascent Vehicles (MAV); 2) multi-mission technologies for Earth Entry Vehicles (MMEEV); and 3) electric propulsion. These technologies are more vehicles and mission-focused, and present a different set of technology development and infusion steps beyond those previously implemented. The Systems/Mission Analysis area is focused on developing tools and assessing the application of propulsion and spacecraft bus technologies to a wide variety of mission concepts. These inspace propulsion technologies are applicable, and potentially enabling for future NASA Discovery, New Frontiers, and sample return missions currently under consideration, as well as having broad applicability to potential Flagship missions. This paper provides a brief overview of the ISPT program, describing the development status and technology infusion readiness of in-space propulsion technologies in the areas of electric propulsion, Aerocapture, Earth entry vehicles, propulsion components, Mars ascent vehicle, and mission/systems analysis.

The status of spacecraft bus and platform technology development under the NASA ISPT program

NASA Astrophysics Data System (ADS)

Anderson, D. J.; Munk, M. M.; Pencil, E.; Dankanich, J.; Glaab, L.; Peterson, T.

The In-Space Propulsion Technology (ISPT) program is developing spacecraft bus and platform technologies that will enable or enhance NASA robotic science missions. The ISPT program is currently developing technology in four areas that include Propulsion System Technologies (electric and chemical), Entry Vehicle Technologies (aerocapture and Earth entry vehicles), Spacecraft Bus and Sample Return Propulsion Technologies (components and ascent vehicles), and Systems/Mission Analysis. Three technologies are ready for near-term flight infusion: 1) the high-temperature Advanced Material Bipropellant Rocket (AMBR) engine providing higher performance; 2) NASA's Evolutionary Xenon Thruster (NEXT) ion propulsion system, a 0.6-7 kW throttle-able gridded ion system; and 3) Aerocapture technology development with investments in a family of thermal protection system (TPS) materials and structures; guidance, navigation, and control (GN& C) models of blunt-body rigid aeroshells; and aerothermal effect models. Two component technologies being developed with flight infusion in mind are the Advanced Xenon Flow Control System and ultra-lightweight propellant tank technologies. Future directions for ISPT are technologies that relate to sample return missions and other spacecraft bus technology needs like: 1) Mars Ascent Vehicles (MAV); 2) multi-mission technologies for Earth Entry Vehicles (MMEEV); and 3) electric propulsion. These technologies are more vehicles and mission-focused, and present a different set of technology development and infusion steps beyond those previously implemented. The Systems/Mission Analysis area is focused on developing tools and assessing the application of propulsion and spacecraft bus technologies to a wide variety of mission concepts. These in-space propulsion technologies are applicable, and potentially enabling for future NASA Discovery, New Frontiers, and sample return missions currently under consideration, as well as having broad applicabilit- to potential Flagship missions. This paper provides a brief overview of the ISPT program, describing the development status and technology infusion readiness of in-space propulsion technologies in the areas of electric propulsion, Aerocapture, Earth entry vehicles, propulsion components, Mars ascent vehicle, and mission/systems analysis.

The Status of Spacecraft Bus and Platform Technology Development Under the NASA ISPT Program

NASA Technical Reports Server (NTRS)

Anderson, David J.; Munk, Michelle M.; Pencil, Eric J.; Dankanich, John; Glaab, Louis J.

2013-01-01

The In-Space Propulsion Technology (ISPT) program is developing spacecraft bus and platform technologies that will enable or enhance NASA robotic science missions. The ISPT program is currently developing technology in four areas that include Propulsion System Technologies (electric and chemical), Entry Vehicle Technologies (aerocapture and Earth entry vehicles), Spacecraft Bus and Sample Return Propulsion Technologies (components and ascent vehicles), and Systems/Mission Analysis. Three technologies are ready for near-term flight infusion: 1) the high-temperature Advanced Material Bipropellant Rocket (AMBR) engine providing higher performance 2) NASAs Evolutionary Xenon Thruster (NEXT) ion propulsion system, a 0.6-7 kW throttle-able gridded ion system and 3) Aerocapture technology development with investments in a family of thermal protection system (TPS) materials and structures guidance, navigation, and control (GN&C) models of blunt-body rigid aeroshells and aerothermal effect models. Two component technologies being developed with flight infusion in mind are the Advanced Xenon Flow Control System, and ultra-lightweight propellant tank technologies. Future direction for ISPT are technologies that relate to sample return missions and other spacecraft bus technology needs like: 1) Mars Ascent Vehicles (MAV) 2) multi-mission technologies for Earth Entry Vehicles (MMEEV) and 3) electric propulsion. These technologies are more vehicle and mission-focused, and present a different set of technology development and infusion steps beyond those previously implemented. The Systems/Mission Analysis area is focused on developing tools and assessing the application of propulsion and spacecraft bus technologies to a wide variety of mission concepts. These in-space propulsion technologies are applicable, and potentially enabling for future NASA Discovery, New Frontiers, and sample return missions currently under consideration, as well as having broad applicability to potential Flagship missions. This paper provides a brief overview of the ISPT program, describing the development status and technology infusion readiness of in-space propulsion technologies in the areas of electric propulsion, Aerocapture, Earth entry vehicles, propulsion components, Mars ascent vehicle, and mission/systems analysis.

NASA Goddard Thermal Technology Overview 2017

NASA Technical Reports Server (NTRS)

Butler, Dan; Swanson, Ted

2017-01-01

This presentation summarizes the current plans and efforts at NASA Goddard to develop new thermal control technology for anticipated future missions. It will also address some of the programmatic developments currently underway at NASA, especially with respect to the NASA Technology Development Program. The effects of the recently enacted FY 17 NASA budget, which includes a sizeable increase, will also be addressed. While funding for basic technology development is still tight, significant efforts are being made in direct support of flight programs. Thermal technology Implementation on current flight programs will be reviewed, and the recent push for CubeSat mission development will also be addressed. Many of these technologies also have broad applicability to DOD (Dept. of Defense), DOE (Dept. of the Environment), and commercial programs. Partnerships have been developed with the Air Force, Navy, and various universities to promote technology development. In addition, technology development activities supported by internal research and development (IRAD) program and the Small Business Innovative Research (SBIR) program are reviewed in this presentation. Specific technologies addressed include; two-phase systems applications and issues on NASA missions, latest developments of electro-hydrodynamically pumped systems, Atomic Layer Deposition (ALD), Micro-scale Heat Transfer, and various other research activities.

NASA Goddard Thermal Technology Overview 2016

NASA Technical Reports Server (NTRS)

Butler, Dan; Swanson, Ted

2016-01-01

This presentation summarizes the current plans and efforts at NASA Goddard to develop new thermal control technology for anticipated future missions. It will also address some of the programmatic developments currently underway at NASA, especially with respect to the NASA Technology Development Program. The effects of the recently enacted FY 16 NASA budget, which includes a sizeable increase, will also be addressed. While funding for basic technology development is still tight, significant efforts are being made in direct support of flight programs. Thermal technology implementation on current flight programs will be reviewed, and the recent push for Cube-sat mission development will also be addressed. Many of these technologies also have broad applicability to DOD, DOE, and commercial programs. Partnerships have been developed with the Air Force, Navy, and various universities to promote technology development. In addition, technology development activities supported by internal research and development (IRAD) program and the Small Business Innovative Research (SBIR) program are reviewed in this presentation. Specific technologies addressed include; two-phase systems applications and issues on NASA missions, latest developments of electro-hydrodynamically pumped systems, Atomic Layer Deposition (ALD), Micro-scale Heat Transfer, and various other research activities.

Research on robotics by principal investigators of the Robotics Technology Development Program

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harrigan, R.W.

The U.S. Department of Energy`s Office of Technology Development has been developing robotics and automation technologies for the clean-up and handling of hazardous and radioactive waste through one of its major elements, Cross Cutting and Advanced Technology development. CC&AT university research and development programs recognize the strong technology, base resident in the university community and sponsor a focused technology research and development program which stresses close interaction between the university sector and the DOE community. This report contains a compilation of research articles by each of 14 principle investigators supported by CC&AT to develop robotics and automation technologies for themore » clean-up and handling of hazardous and radioactive waste. This research has led to innovative solutions for waste clean-up problems, and it has moved technology out of university laboratories into functioning systems which has allowed early evaluation by site technologists.« less

Policy issues inherent in advanced technology development

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baumann, P.D.

1994-12-31

In the development of advanced technologies, there are several forces which are involved in the success of the development of those technologies. In the overall development of new technologies, a sufficient number of these forces must be present and working in order to have a successful opportunity at developing, introducing and integrating into the marketplace a new technology. This paper discusses some of these forces and how they enter into the equation for success in advanced technology research, development, demonstration, commercialization and deployment. This paper limits itself to programs which are generally governmental funded, which in essence represent most ofmore » the technology development efforts that provide defense, energy and environmental technological products. Along with the identification of these forces are some suggestions as to how changes may be brought about to better ensure success in a long term to attempt to minimize time and financial losses.« less

Strategy for the Eighties: High Technology Industrial Development.

ERIC Educational Resources Information Center

Kansas State Dept. of Economic Development, Topeka.

The need for high technology development in Kansas is assessed, with attention to community considerations and the roles of universities and state government in fostering technology development and community considerations. After defining a high technology industry, technologically innovative industries are identified, and influences on the…

75 FR 55360 - Networking and Information Technology Research and Development (NITRD) Program: Draft NITRD 2010...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-09-10

... NATIONAL SCIENCE FOUNDATION Networking and Information Technology Research and Development (NITRD... Information Technology Research and Development (NITRD). ACTION: Notice, request for public comment. FOR..., the National Coordination Office for Networking and Information Technology Research and Development...

Advanced Refrigerator/Freezer Technology Development. Technology Assessment

NASA Technical Reports Server (NTRS)

Gaseor, Thomas; Hunter, Rick; Hamill, Doris

1996-01-01

The NASA Lewis Research Center, through contract with Oceaneering Space Systems, is engaged in a project to develop advanced refrigerator/freezer (R/F) technologies for future Life and Biomedical Sciences space flight missions. The first phase of this project, a technology assessment, has been completed to identify the advanced R/F technologies needed and best suited to meet the requirements for the five R/F classifications specified by Life and Biomedical Science researchers. Additional objectives of the technology assessment were to rank those technologies based on benefit and risk, and to recommend technology development activities that can be accomplished within this project. This report presents the basis, the methodology, and results of the R/F technology assessment, along with technology development recommendations.

The development and technology transfer of software engineering technology at NASA. Johnson Space Center

NASA Technical Reports Server (NTRS)

Pitman, C. L.; Erb, D. M.; Izygon, M. E.; Fridge, E. M., III; Roush, G. B.; Braley, D. M.; Savely, R. T.

1992-01-01

The United State's big space projects of the next decades, such as Space Station and the Human Exploration Initiative, will need the development of many millions of lines of mission critical software. NASA-Johnson (JSC) is identifying and developing some of the Computer Aided Software Engineering (CASE) technology that NASA will need to build these future software systems. The goal is to improve the quality and the productivity of large software development projects. New trends are outlined in CASE technology and how the Software Technology Branch (STB) at JSC is endeavoring to provide some of these CASE solutions for NASA is described. Key software technology components include knowledge-based systems, software reusability, user interface technology, reengineering environments, management systems for the software development process, software cost models, repository technology, and open, integrated CASE environment frameworks. The paper presents the status and long-term expectations for CASE products. The STB's Reengineering Application Project (REAP), Advanced Software Development Workstation (ASDW) project, and software development cost model (COSTMODL) project are then discussed. Some of the general difficulties of technology transfer are introduced, and a process developed by STB for CASE technology insertion is described.

Cutting Edge Technologies Presentation: An Overview of Developing Sensor Technology Directions and Possible Barriers to New Technology Implementation

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2007-01-01

The aerospace industry requires the development of a range of chemical sensor technologies for such applications as leak detection, emission monitoring, fuel leak detection, environmental monitoring, and fire detection. A range of chemical sensors are being developed based on micromachining and microfabrication technology to fabricate microsensors with minimal size, weight, and power consumption; and the use of nanomaterials and structures to develop sensors with improved stability combined with higher sensitivity, However, individual sensors are limited in the amount of information that they can provide in environments that contain multiple chemical species. Thus, sensor arrays are being developed to address detection needs in such multi-species environments. These technologies and technical approaches have direct relevance to breath monitoring for clinical applications. This presentation gives an overview of developing cutting-edge sensor technology and possible barriers to new technology implementation. This includes lessons learned from previous microsensor development, recent work in development of a breath monitoring system, and future directions in the implementation of cutting edge sensor technology.

NASA Development of Aerocapture Technologies

NASA Technical Reports Server (NTRS)

James, Bonnie; Munk, Michelle; Moon, Steve

2003-01-01

Aeroassist technology development is a vital part of the NASA ln-Space Propulsion Program (ISP), which is managed by the NASA Headquarters Office of Space Science, and implemented by the Marshall Space Flight Center in Huntsville, Alabama. Aeroassist is the general term given to various techniques to maneuver a space vehicle within an atmosphere, using aerodynamic forces in lieu of propulsive fuel. Within the ISP, the current aeroassist technology development focus is aerocapture. The objective of the ISP Aerocapture Technology Project (ATP) is to develop technologies that can enable and/or benefit NASA science missions by significantly reducing cost, mass, and/or travel times. To accomplish this objective, the ATP identifies and prioritizes the most promising technologies using systems analysis, technology advancement and peer review, coupled with NASA Headquarters Office of Space Science target requirements. Plans are focused on developing mid-Technology Readiness Level (TRL) technologies to TRL 6 (ready for technology demonstration in space).

NASA Development of Aerocapture Technologies

NASA Technical Reports Server (NTRS)

James, Bonnie; Munk, Michelle; Moon, Steve

2004-01-01

Aeroassist technology development is a vital part of the NASA In-Space Propulsion Program (ISP), which is managed by the NASA Headquarters Office of Space Science, and implemented by the Marshall Space Flight Center in Huntsville, Alabama. Aeroassist is the general term given to various techniques to maneuver a space vehicle within an atmosphere, using aerodynamic forces in lieu of propulsive fuel. Within the ISP, the current aeroassist technology development focus is aerocapture. The objective of the ISP Aerocapture Technology Project (ATP) is to develop technologies that can enable and/or benefit NASA science missions by significantly reducing cost, mass, and/or travel times. To accomplish this objective, the ATP identifies and prioritizes the most promising technologies using systems analysis, technology advancement and peer review, coupled with NASA Headquarters Office of Space Science target requirements. Plans are focused on developing mid-Technology Readiness Level (TRL) technologies to TRL 6 (ready for technology demonstration in space).

Methodologies for Optimum Capital Expenditure Decisions for New Medical Technology

PubMed Central

Landau, Thomas P.; Ledley, Robert S.

1980-01-01

This study deals with the development of a theory and an analytical model to support decisions regarding capital expenditures for complex new medical technology. Formal methodologies and quantitative techniques developed by applied mathematicians and management scientists can be used by health planners to develop cost-effective plans for the utilization of medical technology on a community or region-wide basis. In order to maximize the usefulness of the model, it was developed and tested against multiple technologies. The types of technologies studied include capital and labor-intensive technologies, technologies whose utilization rates vary with hospital occupancy rate, technologies whose use can be scheduled, and limited-use and large-use technologies.

A summary of the status of biomass conversion technologies and opportunities for their use in Latin America

NASA Astrophysics Data System (ADS)

Waddle, D. B.; Perlack, R. D.

1990-03-01

Biomass plays a significant role in energy use in developing countries; however, these resources are often used very inefficiently. Recent technology developments have made possible improved conversion efficiencies for utility scale technologies. These developments may be of interest in the wake of recent policy changes occurring in Central America, with respect to independent power production. Efforts are also being directed at developing biomass conversion technologies that can interface and/or compete with internal combustion engines for small, isolated loads. This paper reviews the technological status of biomass conversion technologies appropriate for commercial, industrial, and small utility applications in developing countries, and in Latin America in particular. Market opportunities, constraints, and technology developments are also discussed.

Simulation of wastewater effects on dissolved oxygen during low streamflow in the Red River of the North at Fargo, North Dakota, and Moorhead, Minnesota

USGS Publications Warehouse

Wesolowski, Edwin A.

1996-01-01

Pursuant to Section 303(d) of the Clean Water Act, both North Dakota and Minnesota identified part of the Red River of the North (Red River) as water-quality limited. The states are required to determine the total maximum daily load (TMDL) that can be discharged to a water-quality limited reach from various pollution sources without contravening water-quality standards (U.S. Environmental Protection Agency, 1991). A work group consisting of local, State, and Federal agency representatives that was organized in June 1994 decided that a TMDL should be developed in phases for a subreach of the Red River at Fargo, N. Dak., and Moorhead, Minn. (fig. 1). In the first phase, which is the basis for this report, the focus is on attainment of the instream dissolved-oxygen (DO) standard during low streamflows, and only Fargo and Moorhead wastewater-treatment-plant discharges and Sheyenne River inflow are considered. The study reach begins about 0.1 mile (mi) downstream (north) of the 12th Avenue North bridge in Fargo and extends 30.8 mi downstream to a site 0.8 mi upstream of the confluence of the Buffalo and Red Rivers (fig. 1). Nitrification of total ammonia (ammonia) from Fargo and Moorhead wastewater consumes most of the DO in the study reach (Wesolowski, 1994). Because the new (1995) Fargo plant already is nitrifying its wastewater, the work group needed to determine the maximum ammonia concentration for wastewater from the nonnitrifying Moorhead plant. To accomplish this task, the Red River at Fargo Water-Quality (RRatFGO QW) model (Wesolowski, 1994, 1996b) was used to simulate the effects of various wastewater-management alternatives during low streamflow. This report presents the results of those simulations to determine the usefulness of the model for management decisions. The simulations and report were completed in cooperation with the North Dakota Department of Health.

Technology Alignment and Portfolio Prioritization (TAPP)

NASA Technical Reports Server (NTRS)

Funaro, Gregory V.; Alexander, Reginald A.

2015-01-01

Technology Alignment and Portfolio Prioritization (TAPP) is a method being developed by the Advanced Concepts Office, at NASA Marshall Space Flight Center. The TAPP method expands on current technology assessment methods by incorporating the technological structure underlying technology development, e.g., organizational structures and resources, institutional policy and strategy, and the factors that motivate technological change. This paper discusses the methods ACO is currently developing to better perform technology assessments while taking into consideration Strategic Alignment, Technology Forecasting, and Long Term Planning.

Technology Education Professional Enhancement Project

NASA Technical Reports Server (NTRS)

Hughes, Thomas A., Jr.

1996-01-01

The two goals of this project are: the use of integrative field of aerospace technology to enhance the content and instruction delivered by math, science, and technology teachers through the development of a new publication entitled NASA Technology Today, and to develop a rationale and structure for the study of technology, which establishes the foundation for developing technology education standards and programs of the future.

Space transfer vehicle concepts and requirements study. Volume 2, book 4: Integrated advanced technology development

NASA Technical Reports Server (NTRS)

Weber, Gary A.

1991-01-01

The Space Transfer Vehicle (STV) program provides both an opportunity and a requirement to increase our upper stage capabilities with the development and applications of new technologies. Issues such as man rating, space basing, reusability, and long lunar surface storage times drive the need for new technology developments and applications. In addition, satisfaction of mission requirements such as lunar cargo delivery capability and lunar landing either require new technology development or can be achieved in a more cost-effective manner with judicious applications of advanced technology. During the STV study, advanced technology development requirements and plans have been addressed by the Technology/Advanced Development Working Group composed of NASA and contractor representatives. This report discusses the results to date of this working group. The first section gives an overview of the technologies that have potential or required applications for the STV and identifies those technologies baselined for the STV. Figures are provided that list the technology categories and show the priority placed on those technology categories for either the space-based or ground-based options. The second section covers the plans and schedules for incorporating the technologies into the STV program.

Lunar Surface Systems Supportability Technology Development Roadmap

NASA Technical Reports Server (NTRS)

Oeftering, Richard C.; Struk, Peter M.; Green, Jennifer L.; Chau, Savio N.; Curell, Philip C.; Dempsey, Cathy A.; Patterson, Linda P.; Robbins, William; Steele, Michael A.; DAnnunzio, Anthony;

Johnson Space Center Research and Technology Report

NASA Technical Reports Server (NTRS)

Pido, Kelle; Davis, Henry L. (Technical Monitor)

1999-01-01

As the principle center for NASA's Human Exploration and Development of Space (HEDS) Enterprise, the Johnson Space Center (JSC) leads NASA's development of human spacecraft, human support systems, and human spacecraft operations. To implement this mission, JSC has focused on developing the infrastructure and partnerships that enable the technology development for future NASA programs. In our efforts to develop key technologies, we have found that collaborative relationships with private industry and academia strengthen our capabilities, infuse innovative ideas, and provide alternative applications for our development projects. The American public has entrusted NASA with the responsibility for space--technology development, and JSC is committed to the transfer of the technologies that we develop to the private sector for further development and application. It is our belief that commercialization of NASA technologies benefits both American industry and NASA through technology innovation and continued partnering. To this end, we present the 1998-1999 JSC Research and Technology Report. As your guide to the current JSC technologies, this report showcases the projects in work at JSC that may be of interest to U.S. industry, academia, and other government agencies (federal, state, and local). For each project, potential alternative uses and commercial applications are described.

DEVELOPMENT OF EMERGING TECHNOLOGIES WITHIN THE SITE PROGRAM

EPA Science Inventory

The Site Program is formed by five research programs: the Demonstration Program, the Emerging Technology Program, the Measurement and Monitoring Technology Development Program, the Innovative Technology Program, and the Technology Transfer Program. The Emerging Technology (ET) P...

Developing a Strategic Plan for NASA JSC's Technology Investments

NASA Technical Reports Server (NTRS)

Stecklein, Jonette M.

2012-01-01

Human space exploration has always been heavily influenced by goals to achieve a specific mission on a specific schedule. This approach drove rapid technology development, the rapidity of which adds risks as well as provides a major driver for costs. The National Aeronautics and Space Administration (NASA) is now approaching the extension of human presence throughout the solar system by balancing a proactive yet less schedule-driven development of technology with opportunistic scheduling of missions as the needed technologies are realized. This approach should provide cost effective, low risk technology development that will enable efficient and effective manned spaceflight missions. As a first step, the NASA Human Spaceflight Architecture Team (HAT) has identified a suite of critical technologies needed to support future manned missions across a range of destinations, including in cislunar space, near earth asteroid visits, lunar exploration, Mars space, and Mars exploration. The challenge now is to develop a strategy and plan for technology development that efficiently enables these missions over a reasonable time period, without increasing technology development costs unnecessarily due to schedule pressure, and subsequently mitigating development and mission risks. NASA fs Johnson Space Center (JSC), as the nation's primary center for human exploration, is addressing this challenge through an innovative approach allocating Internal Research and Development funding to projects that have been prioritized using four focus criteria, with appropriate importance weighting. These four focus criteria are the Human Space Flight Technology Needs, JSC Core Technology Competencies, Commercialization Potential, and Partnership Potential. The inherent coupling in these focus criteria have been captured in a database and have provided an initial prioritization for allocation of technology development research funding. This paper will describe this process and this database, and the preliminary technology development prioritization results.

Environmental restoration and waste management: Robotics technology development program: Robotics 5-year program plan. [Contains glossary

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

This plan covers robotics Research, Development, Demonstration, Testing, activities in the Program for the next five years. These activities range from bench-scale R D to fullscale hot demonstrations at DOE sites. This plan outlines applications of existing technology to near-term needs, the development and application of enhanced technology for longer-term needs, and an initiation of advanced technology development to meet those needs beyond the five-year plan. The objective of the Robotic Technology Development (RTDP) is to develop and apply robotics technologies that will enable Environmental Restoration and Waste Management operations at DOE sites to be safer, faster and cheaper. Fivemore » priority DOE sites were visited in March 1990 to identify needs for robotics technology in ER WM operations. This 5-Year Program Plan for the RTDP detailed annual plans for robotics technology development based on identified needs. This 5-Year Program Plan discusses the overall approach to be adopted by the RTDP to aggressively develop robotics technology and contains discussions of the Program Management Plan, Site Visit and Needs Summary, Approach to Needs-Directed Technical Development, Application-Specific Technical Development, and Cross-Cutting and Advanced Technology. Integrating application-specific ER WM needs, the current state of robotics technology, and the potential benefits (in terms of faster, safer, and cheaper) of new technology, the Plan develops application-specific road maps for robotics RDDT E for the period FY 1991 through FY 1995. In addition, the Plan identifies areas where longer-term research in robotics will have a high payoff in the 5- to 20-year time frame. 12 figs.« less

Summary of Research Report Cooperative Agreement

NASA Technical Reports Server (NTRS)

1997-01-01

Several areas of work related to commercialization of technology developed at NASA Ames Research Center (ARC) are discussed in this report. The areas are: (1) perform a feasibility study to develop a software commercialization center is at ARC; (2) perform preliminary work for formation of joint development of sensor technology for telemedicine applications; (3) development of a discovery interview process and staff training to assist the commercialization of technology developed at Ames, specifically aimed at working with researchers; (4) develop partners to further develop and commercialize image compression technology developed at AMES; (5) assist efforts to commercialize a software technology which imparts the ability to establish relevance-based retrieval in the handling of large repositories of information; (6) explore the development of cryocooler technology using pulse tube refrigeration; (7) assess interest in commercialization of a new method of measuring skin friction drag on wind tunnel models using liquid crystal material; (8) attempt to incorporate emerging technologies in the infrastructure of natural hazards mitigation; and (9) forming a nonprofit organization, "The Bootstrap Alliance", whose mission is to promote the use of digital technologies for collaborative problem solving. The results of these initiatives are discussed.

Technological Innovation and Developmental Strategies for Sustainable Management of Aquatic Resources in Developing Countries

NASA Astrophysics Data System (ADS)

Agboola, Julius Ibukun

2014-12-01

Sustainable use and allocation of aquatic resources including water resources require implementation of ecologically appropriate technologies, efficient and relevant to local needs. Despite the numerous international agreements and provisions on transfer of technology, this has not been successfully achieved in developing countries. While reviewing some challenges to technological innovations and developments (TID), this paper analyzes five TID strategic approaches centered on grassroots technology development and provision of localized capacity for sustainable aquatic resources management. Three case studies provide examples of successful implementation of these strategies. Success requires the provision of localized capacity to manage technology through knowledge empowerment in rural communities situated within a framework of clear national priorities for technology development.

Technological innovation and developmental strategies for sustainable management of aquatic resources in developing countries.

PubMed

Agboola, Julius Ibukun

2014-12-01

Sustainable use and allocation of aquatic resources including water resources require implementation of ecologically appropriate technologies, efficient and relevant to local needs. Despite the numerous international agreements and provisions on transfer of technology, this has not been successfully achieved in developing countries. While reviewing some challenges to technological innovations and developments (TID), this paper analyzes five TID strategic approaches centered on grassroots technology development and provision of localized capacity for sustainable aquatic resources management. Three case studies provide examples of successful implementation of these strategies. Success requires the provision of localized capacity to manage technology through knowledge empowerment in rural communities situated within a framework of clear national priorities for technology development.

Human spaceflight technology needs-a foundation for JSC's technology strategy

NASA Astrophysics Data System (ADS)

Stecklein, J. M.

Human space exploration has always been heavily influenced by goals to achieve a specific mission on a specific schedule. This approach drove rapid technology development, the rapidity of which added risks and became a major driver for costs and cost uncertainty. The National Aeronautics and Space Administration (NASA) is now approaching the extension of human presence throughout the solar system by balancing a proactive yet less schedule-driven development of technology with opportunistic scheduling of missions as the needed technologies are realized. This approach should provide cost effective, low risk technology development that will enable efficient and effective manned spaceflight missions. As a first step, the NASA Human Spaceflight Architecture Team (HAT) has identified a suite of critical technologies needed to support future manned missions across a range of destinations, including in cis-lunar space, near earth asteroid visits, lunar exploration, Mars moons, and Mars exploration. The challenge now is to develop a strategy and plan for technology development that efficiently enables these missions over a reasonable time period, without increasing technology development costs unnecessarily due to schedule pressure, and subsequently mitigating development and mission risks. NASA's Johnson Space Center (JSC), as the nation's primary center for human exploration, is addressing this challenge through an innovative approach in allocating Internal Research and Development funding to projects. The HAT Technology Needs (Tech Needs) Database has been developed to correlate across critical technologies and the NASA Office of Chief Technologist Technology Area Breakdown Structure (TABS). The TechNeeds Database illuminates that many critical technologies may support a single technical capability gap, that many HAT technology needs may map to a single TABS technology discipline, and that a single HAT technology need may map to multiple TABS technology disciplines. Th- TechNeeds Database greatly clarifies understanding of the complex relationships of critical technologies to mission and architecture element needs. Extensions to the core TechNeeds Database allow JSC to factor in and appropriately weight JSC core technology competencies, and considerations of commercialization potential and partnership potential. The inherent coupling among these, along with an appropriate importance weighting, has provided an initial prioritization for allocation of technology development research funding at JSc. The HAT Technology Needs Database, with a core of built-in reports, clarifies and communicates complex technology needs for cost effective human space exploration so that an organization seeking to assure that research prioritization supports human spaceflight of the future can be successful.

Human Spaceflight Technology Needs - A Foundation for JSC's Technology Strategy

NASA Technical Reports Server (NTRS)

Stecklein, Jonette M.

2013-01-01

Human space exploration has always been heavily influenced by goals to achieve a specific mission on a specific schedule. This approach drove rapid technology development, the rapidity of which adds risks as well as provides a major driver for costs and cost uncertainty. The National Aeronautics and Space Administration (NASA) is now approaching the extension of human presence throughout the solar system by balancing a proactive yet less schedule-driven development of technology with opportunistic scheduling of missions as the needed technologies are realized. This approach should provide cost effective, low risk technology development that will enable efficient and effective manned spaceflight missions. As a first step, the NASA Human Spaceflight Architecture Team (HAT) has identified a suite of critical technologies needed to support future manned missions across a range of destinations, including in cis-lunar space, near earth asteroid visits, lunar exploration, Mars moons, and Mars exploration. The challenge now is to develop a strategy and plan for technology development that efficiently enables these missions over a reasonable time period, without increasing technology development costs unnecessarily due to schedule pressure, and subsequently mitigating development and mission risks. NASA's Johnson Space Center (JSC), as the nation s primary center for human exploration, is addressing this challenge through an innovative approach in allocating Internal Research and Development funding to projects. The HAT Technology Needs (TechNeeds) Database has been developed to correlate across critical technologies and the NASA Office of Chief Technologist Technology Area Breakdown Structure (TABS). The TechNeeds Database illuminates that many critical technologies may support a single technical capability gap, that many HAT technology needs may map to a single TABS technology discipline, and that a single HAT technology need may map to multiple TABS technology disciplines. The TechNeeds Database greatly clarifies understanding of the complex relationships of critical technologies to mission and architecture element needs. Extensions to the core TechNeeds Database allow JSC to factor in and appropriately weight JSC Center Core Technology Competencies, and considerations of Commercialization Potential and Partnership Potential. The inherent coupling among these, along with an appropriate importance weighting, has provided an initial prioritization for allocation of technology development research funding for JSC. The HAT Technology Needs Database, with a core of built-in reports, clarifies and communicates complex technology needs for cost effective human space exploration such that an organization seeking to assure that research prioritization supports human spaceflight of the future can be successful.

Decision Gate Process for Assessment of a Technology Development Portfolio

NASA Technical Reports Server (NTRS)

Kohli, Rajiv; Fishman, Julianna; Hyatt, Mark

2012-01-01

The NASA Dust Management Project (DMP) was established to provide technologies (to TRL 6 development level) required to address adverse effects of lunar dust to humans and to exploration systems and equipment, which will reduce life cycle cost and risk, and will increase the probability of sustainable and successful lunar missions. The technology portfolio of DMP consisted of different categories of technologies whose final product is either a technology solution in itself, or one that contributes toward a dust mitigation strategy for a particular application. A Decision Gate Process (DGP) was developed to assess and validate the achievement and priority of the dust mitigation technologies as the technologies progress through the development cycle. The DGP was part of continuous technology assessment and was a critical element of DMP risk management. At the core of the process were technology-specific criteria developed to measure the success of each DMP technology in attaining the technology readiness levels assigned to each decision gate. The DGP accounts for both categories of technologies and qualifies the technology progression from technology development tasks to application areas. The process provided opportunities to validate performance, as well as to identify non-performance in time to adjust resources and direction. This paper describes the overall philosophy of the DGP and the methodology for implementation for DMP, and describes the method for defining the technology evaluation criteria. The process is illustrated by example of an application to a specific DMP technology.

Technology Development Center at NICT

NASA Technical Reports Server (NTRS)

Takefuji, Kazuhiro; Ujihara, Hideki

2013-01-01

The National Institute of Information and Communications Technology (NICT) is developing and testing VLBI technologies and conducts observations with this new equipment. This report gives an overview of the Technology Development Center (TDC) at NICT and summarizes recent activities.

Status of Sample Return Propulsion Technology Development Under NASA's ISPT Program

NASA Technical Reports Server (NTRS)

Anderson, David J.; Glaab, Louis J.; Munk, Michelle M.; Pencil, Eric; Dankanich, John; Peterson, Todd T.

2012-01-01

The In-Space Propulsion Technology (ISPT) program was tasked in 2009 to start development of propulsion technologies that would enable future sample return missions. ISPT s sample return technology development areas are diverse. Sample Return Propulsion (SRP) addresses electric propulsion for sample return and low cost Discovery-class missions, propulsion systems for Earth Return Vehicles (ERV) including transfer stages to the destination, and low technology readiness level (TRL) advanced propulsion technologies. The SRP effort continues work on HIVHAC thruster development to transition into developing a Hall-effect propulsion system for sample return (ERV and transfer stages) and low-cost missions. Previous work on the lightweight propellant-tanks continues for sample return with direct applicability to a Mars Sample Return (MSR) mission with general applicability to all future planetary spacecraft. The Earth Entry Vehicle (EEV) work focuses on building a fundamental base of multi-mission technologies for Earth Entry Vehicles (MMEEV). The main focus of the Planetary Ascent Vehicles (PAV) area is technology development for the Mars Ascent Vehicle (MAV), which builds upon and leverages the past MAV analysis and technology developments from the Mars Technology Program (MTP) and previous MSR studies

Development of Inflatable Entry Systems Technologies

NASA Technical Reports Server (NTRS)

Player, Charles J.; Cheatwood, F. McNeil; Corliss, James

2005-01-01

Achieving the objectives of NASA s Vision for Space Exploration will require the development of new technologies, which will in turn require higher fidelity modeling and analysis techniques, and innovative testing capabilities. Development of entry systems technologies can be especially difficult due to the lack of facilities and resources available to test these new technologies in mission relevant environments. This paper discusses the technology development process to bring inflatable aeroshell technology from Technology Readiness Level 2 (TRL-2) to TRL-7. This paper focuses mainly on two projects: Inflatable Reentry Vehicle Experiment (IRVE), and Inflatable Aeroshell and Thermal Protection System Development (IATD). The objectives of IRVE are to conduct an inflatable aeroshell flight test that demonstrates exoatmospheric deployment and inflation, reentry survivability and stability, and predictable drag performance. IATD will continue the development of the technology by conducting exploration specific trade studies and feeding forward those results into three more flight tests. Through an examination of these projects, and other potential projects, this paper discusses some of the risks, issues, and unexpected benefits associated with the development of inflatable entry systems technology.

[Diagnosis of the productive capacity of the IMSS regarding health technologies].

PubMed

Figueroa-Lara, Alejandro; López-Fernández, Fátima Itzel; López-Domínguez, Adriana; Fajardo-Dolci, German

To quantify the production capacity and performance in research and technological developments of the Mexican Social Security Institute (IMSS). We identified and analyzed information of the legislation, human and financial resources, and infrastructure addressed for research and technological development of IMSS. We analyzed whether the information on the legal framework contained key features to boost research and technological development. Information on the human, financial, and infrastructure resources were obtained from official sources. The research productivity was identified by a bibliometric analysis in 2014; productivity in technological developments was identified by intellectual products. The legal framework of the IMSS has several areas for improvement to boost research and technological development, especially the guidelines for technology transfer. The IMSS has 438 researchers, 39 research units, and a budget of US$ 37.4 million for research and technological development. The rate of articles published per 10 researchers was 4.8; while rate patients was 1.8. The IMSS has a great potential to translate research into technological developments, it is only necessary to make some changes to the legal framework.

Spacecraft Bus and Platform Technology Development under the NASA ISPT Program

NASA Technical Reports Server (NTRS)

Anderson, David J.; Munk, Michelle M.; Pencil, Eric; Dankanich, John; Glaab, Louis; Peterson, Todd

2013-01-01

The In-Space Propulsion Technology (ISPT) program is developing spacecraft bus and platform technologies that will enable or enhance NASA robotic science missions. The ISPT program is currently developing technology in four areas that include Propulsion System Technologies (electric and chemical), Entry Vehicle Technologies (aerocapture and Earth entry vehicles), Spacecraft Bus and Sample Return Propulsion Technologies (components and ascent vehicles), and Systems/Mission Analysis. Three technologies are ready for near-term flight infusion: 1) the high-temperature Advanced Material Bipropellant Rocket (AMBR) engine providing higher performance; 2) NASA s Evolutionary Xenon Thruster (NEXT) ion propulsion system, a 0.6-7 kW throttle-able gridded ion system; and 3) Aerocapture technology development with investments in a family of thermal protection system (TPS) materials and structures; guidance, navigation, and control (GN&C) models of blunt-body rigid aeroshells; and aerothermal effect models. Two component technologies being developed with flight infusion in mind are the Advanced Xenon Flow Control System, and ultra-lightweight propellant tank technologies. Future direction for ISPT are technologies that relate to sample return missions and other spacecraft bus technology needs like: 1) Mars Ascent Vehicles (MAV); 2) multi-mission technologies for Earth Entry Vehicles (MMEEV) for sample return missions; and 3) electric propulsion for sample return and low cost missions. These technologies are more vehicle and mission-focused, and present a different set of technology development and infusion steps beyond those previously implemented. The Systems/Mission Analysis area is focused on developing tools and assessing the application of propulsion and spacecraft bus technologies to a wide variety of mission concepts. These in-space propulsion technologies are applicable, and potentially enabling for future NASA Discovery, New Frontiers, and sample return missions currently under consideration, as well as having broad applicability to potential Flagship missions. This paper provides a brief overview of the ISPT program, describing the development status and technology infusion readiness of in-space propulsion technologies in the areas of electric propulsion, Aerocapture, Earth entry vehicles, propulsion components, Mars ascent vehicle, and mission/systems analysis.

Spacecraft Bus and Platform Technology Development under the NASA ISPT Program

NASA Technical Reports Server (NTRS)

Anderson, David J.; Munk, Michelle M.; Pencil, Eric J.; Dankanich, John W.; Glaab, Louis J.; Peterson, Todd T.

2013-01-01

The In-Space Propulsion Technology (ISPT) program is developing spacecraft bus and platform technologies that will enable or enhance NASA robotic science missions. The ISPT program is currently developing technology in four areas that include Propulsion System Technologies (electric and chemical), Entry Vehicle Technologies (aerocapture and Earth entry vehicles), Spacecraft Bus and Sample Return Propulsion Technologies (components and ascent vehicles), and Systems/Mission Analysis. Three technologies are ready for near-term flight infusion: 1) the high-temperature Advanced Material Bipropellant Rocket (AMBR) engine providing higher performance 2) NASAs Evolutionary Xenon Thruster (NEXT) ion propulsion system, a 0.6-7 kW throttle-able gridded ion system and 3) Aerocapture technology development with investments in a family of thermal protection system (TPS) materials and structures guidance, navigation, and control (GN&C) models of blunt-body rigid aeroshells and aerothermal effect models. Two component technologies being developed with flight infusion in mind are the Advanced Xenon Flow Control System, and ultra-lightweight propellant tank technologies. Future direction for ISPT are technologies that relate to sample return missions and other spacecraft bus technology needs like: 1) Mars Ascent Vehicles (MAV) 2) multi-mission technologies for Earth Entry Vehicles (MMEEV) for sample return missions and 3) electric propulsion for sample return and low cost missions. These technologies are more vehicle and mission-focused, and present a different set of technology development and infusion steps beyond those previously implemented. The Systems/Mission Analysis area is focused on developing tools and assessing the application of propulsion and spacecraft bus technologies to a wide variety of mission concepts. These in-space propulsion technologies are applicable, and potentially enabling for future NASA Discovery, New Frontiers, and sample return missions currently under consideration, as well as having broad applicability to potential Flagship missions. This paper provides a brief overview of the ISPT program, describing the development status and technology infusion readiness of in-space propulsion technologies in the areas of electric propulsion, Aerocapture, Earth entry vehicles, propulsion components, Mars ascent vehicle, and mission/systems analysis.

Development and Validation of Information Technology Mentor Teacher Attitude Scale: A Pilot Study

ERIC Educational Resources Information Center

Saltan, Fatih

2015-01-01

The aim of this study development and validation of a teacher attitude scale toward Information Technology Mentor Teachers (ITMT). ITMTs give technological support to other teachers for integration of technology in their lessons. In the literature, many instruments have been developed to measure teachers' attitudes towards the technological tools…

EPA-developed, patented technologies related to water monitoring and remediation that are available for licensing

EPA Pesticide Factsheets

Under the Federal Technology Transfer Act (FTTA), Federal Agencies can patent inventions developed during the course of research. These technologies can then be licensed to businesses or individuals for further development and sale in the marketplace. These technologies relate to water monitoring and treatment technologies.

Initial Development of the Meaningful Learning with Technology Scale (MeLTS) for High-School Students

ERIC Educational Resources Information Center

Lee, Chwee Beng

2018-01-01

With the rapid developments in emerging technologies and the emphasis on technologies in learning environments, the connection between technologies and meaningful learning has strengthened. Developing an understanding of the components of meaningful learning with technology is pivotal, as this may enable educators to make more informed decisions…

Hypersonic Inflatable Aerodynamic Decelerator (HIAD) Technology Development Overview

NASA Technical Reports Server (NTRS)

Hughes, Stephen J.; Cheatwood, F. McNeil; Calomino, Anthony M.; Wright, Henry S.; Wusk, Mary E.; Hughes, Monica F.

2013-01-01

The successful flight of the Inflatable Reentry Vehicle Experiment (IRVE)-3 has further demonstrated the potential value of Hypersonic Inflatable Aerodynamic Decelerator (HIAD) technology. This technology development effort is funded by NASA's Space Technology Mission Directorate (STMD) Game Changing Development Program (GCDP). This paper provides an overview of a multi-year HIAD technology development effort, detailing the projects completed to date and the additional testing planned for the future.

NASA Space Technology Roadmaps and Priorities: Restoring NASA's Technological Edge and Paving the Way for a New Era in Space

NASA Technical Reports Server (NTRS)

2012-01-01

Success in executing future NASA space missions will depend on advanced technology developments that should already be underway. It has been years since NASA has had a vigorous, broad-based program in advanced space technology development, and NASA's technology base is largely depleted. As noted in a recent National Research Council report on the U.S. civil space program: Future U.S. leadership in space requires a foundation of sustained technology advances that can enable the development of more capable, reliable, and lower-cost spacecraft and launch vehicles to achieve space program goals. A strong advanced technology development foundation is needed also to enhance technology readiness of new missions, mitigate their technological risks, improve the quality of cost estimates, and thereby contribute to better overall mission cost management. Yet financial support for this technology base has eroded over the years. The United States is now living on the innovation funded in the past and has an obligation to replenish this foundational element. NASA has developed a draft set of technology roadmaps to guide the development of space technologies under the leadership of the NASA Office of the Chief Technologist. The NRC appointed the Steering Committee for NASA Technology Roadmaps and six panels to evaluate the draft roadmaps, recommend improvements, and prioritize the technologies within each and among all of the technology areas as NASA finalizes the roadmaps. The steering committee is encouraged by the initiative NASA has taken through the Office of the Chief Technologist (OCT) to develop technology roadmaps and to seek input from the aerospace technical community with this study.

Teachers' perceptions of effective science, technology, and mathematics professional development and changes in classroom practices

NASA Astrophysics Data System (ADS)

Boriack, Anna Christine

The purpose of this study is to examine teachers' perceptions of professional development and changes in classroom practice. A proposed conceptual framework for effective professional development that results in changes in classroom practices was developed. Data from two programs that provided professional development to teachers in the areas of technology, mathematics, and science was used to inform the conceptual framework. These two programs were Target Technology in Texas (T3) and Mathematics, Science, and Technology Teacher Preparation Academies (MSTTPA). This dissertation used a multiple article format to explore each program separately, yet the proposed conceptual framework allowed for comparisons to be made between the two programs. The first study investigated teachers' perceptions of technology-related professional development after their districts had received a T3 grant. An online survey was administrated to all teachers to determine their perceptions of technology-related professional development along with technology self-efficacy. Classroom observations were conducted to determine if teachers were implementing technology. The results indicated that teachers did not perceive professional development as being effective and were not implementing technology in their classrooms. Teachers did have high technology self-efficacy and perceived adequate school support, which implies that effective professional development may be a large factor in whether or not teachers implement technology in their classrooms. The second study evaluated participants' perceptions of the effectiveness of mathematics and science professional development offered through a MSTTP academy. Current and former participants completed an online survey which measured their perceptions of academy activities and school environment. Participants also self-reported classroom implementation of technology. Interviews and open-ended survey questions were used to provide further insight into academy activities. The results indicated that academy participants perceived effective academy activities along with a supportive school environment. Additionally, participants reported sometimes implementing technology in their classrooms. These findings suggest that several factors might influence the successful classroom implementation of professional development. The data which supports the conceptual framework shows that effective professional development may play a key role in successful classroom implementation. Future professional development activities should be designed around characteristics for effective professional development to increase the likelihood that classroom implementation might occur.

New Strategy for Exploration Technology Development: The Human Exploration and Development of Space (HEDS) Exploration/Commercialization Technology Initiative

NASA Technical Reports Server (NTRS)

Mankins, John C.

2000-01-01

In FY 2001, NASA will undertake a new research and technology program supporting the goals of human exploration: the Human Exploration and Development of Space (HEDS) Exploration/Commercialization Technology Initiative (HTCI). The HTCI represents a new strategic approach to exploration technology, in which an emphasis will be placed on identifying and developing technologies for systems and infrastructures that may be common among exploration and commercial development of space objectives. A family of preliminary strategic research and technology (R&T) road maps have been formulated that address "technology for human exploration and development of space (THREADS). These road maps frame and bound the likely content of the HTCL Notional technology themes for the initiative include: (1) space resources development, (2) space utilities and power, (3) habitation and bioastronautics, (4) space assembly, inspection and maintenance, (5) exploration and expeditions, and (6) space transportation. This paper will summarize the results of the THREADS road mapping process and describe the current status and content of the HTCI within that framework. The paper will highlight the space resources development theme within the Initiative and will summarize plans for the coming year.

Technology transfer within the NASA Goddard Space Flight Center

NASA Technical Reports Server (NTRS)

Plotkin, Henry H.

1992-01-01

Viewgraphs on technology transfer within the NASA Goddard Space Flight Center presented to Civil Space Technology Development workshop on technology transfer and effectiveness are provided. Topics covered include: obstacles to technology transfer; technology transfer improvement program at GSFC: communication between technology developers and users; and user feedback to technologists.

The NASA Redox Storage System Development project, 1980

NASA Technical Reports Server (NTRS)

1982-01-01

The technical accomplishments pertaining to the development of Redox systems and related technology are outlined in terms of the task elements: prototype systems development, application analyses, and supporting technology. Prototype systems development provides for a major procurement to develop an industrial capability to take the current NASA Lewis technology and go on to the design, development, and commercialization of iron-chromium Redox storage systems. Application analyses provides for the definition of application concepts and technology requirements, specific definition studies, and the identification of market sectors and their penetration potential. Supporting technology includes both in house and contractual efforts that encompass implementation of technology improvements in membranes, electrodes, reactant processing, and system design. The status of all elements is discussed.

The NASA Redox Storage System Development project, 1980

NASA Astrophysics Data System (ADS)

1982-12-01

The technical accomplishments pertaining to the development of Redox systems and related technology are outlined in terms of the task elements: prototype systems development, application analyses, and supporting technology. Prototype systems development provides for a major procurement to develop an industrial capability to take the current NASA Lewis technology and go on to the design, development, and commercialization of iron-chromium Redox storage systems. Application analyses provides for the definition of application concepts and technology requirements, specific definition studies, and the identification of market sectors and their penetration potential. Supporting technology includes both in house and contractual efforts that encompass implementation of technology improvements in membranes, electrodes, reactant processing, and system design. The status of all elements is discussed.

[Patented technology status quo and development trend for Chinese herbal medicines].

PubMed

Li, Chang; Huang, Luqi

2009-06-01

Patent technology is regarded as technological trends under the market economy condition. The case showed the information form patent literature can be widely used in technology or economy. In this study, we analyzed the patent technology status quo and development trend for Chinese herbal medicines based on China patent database. The patent technology status quo is divided from the technology of biotechnology, quality control, cultivation and herb processing on Chinese herbal medicines. Furthermore, some recommendations of technology development and advices on patent protection for Chinese herbal medicines were suggested.

A Lunar Surface System Supportability Technology Development Roadmap

NASA Technical Reports Server (NTRS)

Oeftering, Richard C.; Struk, Peter M.; Taleghani, Barmac K.

2009-01-01

This paper discusses the establishment of a Supportability Technology Development Roadmap as a guide for developing capabilities intended to allow NASA's Constellation program to enable a supportable, sustainable and affordable exploration of the Moon and Mars. Presented is a discussion of "supportability", in terms of space facility maintenance, repair and related logistics and a comparison of how lunar outpost supportability differs from the International Space Station. Supportability lessons learned from NASA and Department of Defense experience and their impact on a future lunar outpost is discussed. A supportability concept for future missions to the Moon and Mars that involves a transition from a highly logistics dependent to a logistically independent operation is discussed. Lunar outpost supportability capability needs are summarized and a supportability technology development strategy is established. The resulting Lunar Surface Systems Supportability Strategy defines general criteria that will be used to select technologies that will enable future flight crews to act effectively to respond to problems and exploit opportunities in a environment of extreme resource scarcity and isolation. This strategy also introduces the concept of exploiting flight hardware as a supportability resource. The technology roadmap involves development of three mutually supporting technology categories, Diagnostics Test & Verification, Maintenance & Repair, and Scavenging & Recycling. The technology roadmap establishes two distinct technology types, "Embedded" and "Process" technologies, with different implementation and thus different criteria and development approaches. The supportability technology roadmap addresses the technology readiness level, and estimated development schedule for technology groups that includes down-selection decision gates that correlate with the lunar program milestones. The resulting supportability technology roadmap is intended to develop a set of technologies with widest possible capability and utility with a minimum impact on crew time and training and remain within the time and cost constraints of the Constellation program

A Lunar Surface System Supportability Technology Development Roadmap

NASA Technical Reports Server (NTRS)

Oeftering, Richard C.; Struk, Peter M.; Taleghani, barmac K.

2011-01-01

This paper discusses the establishment of a Supportability Technology Development Roadmap as a guide for developing capabilities intended to allow NASA s Constellation program to enable a supportable, sustainable and affordable exploration of the Moon and Mars. Presented is a discussion of supportability, in terms of space facility maintenance, repair and related logistics and a comparison of how lunar outpost supportability differs from the International Space Station. Supportability lessons learned from NASA and Department of Defense experience and their impact on a future lunar outpost is discussed. A supportability concept for future missions to the Moon and Mars that involves a transition from a highly logistics dependent to a logistically independent operation is discussed. Lunar outpost supportability capability needs are summarized and a supportability technology development strategy is established. The resulting Lunar Surface Systems Supportability Strategy defines general criteria that will be used to select technologies that will enable future flight crews to act effectively to respond to problems and exploit opportunities in an environment of extreme resource scarcity and isolation. This strategy also introduces the concept of exploiting flight hardware as a supportability resource. The technology roadmap involves development of three mutually supporting technology categories, Diagnostics Test and Verification, Maintenance and Repair, and Scavenging and Recycling. The technology roadmap establishes two distinct technology types, "Embedded" and "Process" technologies, with different implementation and thus different criteria and development approaches. The supportability technology roadmap addresses the technology readiness level, and estimated development schedule for technology groups that includes down-selection decision gates that correlate with the lunar program milestones. The resulting supportability technology roadmap is intended to develop a set of technologies with widest possible capability and utility with a minimum impact on crew time and training and remain within the time and cost constraints of the Constellation program.

Arsenic removal methods for drinking water in the developing countries: technological developments and research needs.

PubMed

Kabir, Fayzul; Chowdhury, Shakhawat

2017-11-01

Arsenic pollution of drinking water is a concern, particularly in the developing countries. Removal of arsenic from drinking water is strongly recommended. Despite the availability of efficient technologies for arsenic removal, the small and rural communities in the developing countries are not capable of employing most of these technologies due to their high cost and technical complexity. There is a need for the "low-cost" and "easy to use" technologies to protect the humans in the arsenic affected developing countries. In this study, arsenic removal technologies were summarized and the low-cost technologies were reviewed. The advantages and disadvantages of these technologies were identified and their scopes of applications and improvements were investigated. The costs were compared in context to the capacity of the low-income populations in the developing countries. Finally, future research directions were proposed to protect the low-income populations in the developing countries.

Diffusion of Appropriate Educational Technology in Open & Distance Learning in Developing Commonwealth Countries. Final Project Report.

ERIC Educational Resources Information Center

Williams, Roy

The Diffusion of Appropriate Educational Technology in Open and Distance Learning in Developing Countries project was designed to determine awareness and use of educational technologies and communications media in developing countries, to identify factors constraining wider use of educational technologies by developing nations, and to explore…

Development of High Temperature Gas Sensor Technology

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Chen, Liang-Yu; Neudeck, Philip G.; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai; Zhou, Huan-Jun

1997-01-01

The measurement of engine emissions is important for their monitoring and control. However, the ability to measure these emissions in-situ is limited. We are developing a family of high temperature gas sensors which are intended to operate in harsh environments such as those in an engine. The development of these sensors is based on progress in two types of technology: (1) The development of SiC-based semiconductor technology; and (2) Improvements in micromachining and microfabrication technology. These technologies are being used to develop point-contact sensors to measure gases which are important in emission control especially hydrogen, hydrocarbons, nitrogen oxides, and oxygen. The purpose of this paper is to discuss the development of this point-contact sensor technology. The detection of each type of gas involves its own challenges in the fields of materials science and fabrication technology. Of particular importance is sensor sensitivity, selectivity, and stability in long-term, high temperature operation. An overview is presented of each sensor type with an evaluation of its stage of development. It is concluded that this technology has significant potential for use in engine applications but further development is necessary.

Information Communication Technology Planning in Developing Countries

ERIC Educational Resources Information Center

Malapile, Sandy; Keengwe, Jared

2014-01-01

This article explores major issues related to Information Communication Technology (ICT) in education and technology planning. Using the diffusion of innovation theory, the authors examine technology planning opportunities and challenges in Developing countries (DCs), technology planning trends in schools, and existing technology planning models…

Technology transfer within the government

NASA Technical Reports Server (NTRS)

Russell, John

1992-01-01

The report of a workshop panel concerned with technology transfer within the government is presented. The presentation is made in vugraph form. The assigned subtopic for this panel are as follows: (1) transfer from non-NASA US government technology developers to NASA space missions/programs; and (2) transfer from NASA to other US government space mission programs. A specific area of inquiry was Technology Maturation Milestones. Three areas were investigated: technology development; advanced development; and flight hardware development.

Advanced adaptive optics technology development

NASA Astrophysics Data System (ADS)

Olivier, Scot S.

2002-02-01

The NSF Center for Adaptive Optics (CfAO) is supporting research on advanced adaptive optics technologies. CfAO research activities include development and characterization of micro-electro-mechanical systems (MEMS) deformable mirror (DM) technology, as well as development and characterization of high-resolution adaptive optics systems using liquid crystal (LC) spatial light modulator (SLM) technology. This paper presents an overview of the CfAO advanced adaptive optics technology development activities including current status and future plans.

Research and Technology: 2003 Annual Report of the John F Kennedy Space Center

NASA Technical Reports Server (NTRS)

2003-01-01

The John F. Kennedy Space Center (KSC) is America's Spaceport Technology Center. The KSC technology development program encompasses the efforts of the entire KSC team, consisting of Government and contractor personnel, working in partnership with academic institutions and commercial industry. KSC's assigned mission areas are space launch operations and spaceport and range technologies. KSC's technology development customers include current space transportation programs, future space transportation programs / initiatives, and enabling technical programs. The KSC Research and Technology 2003 Annual Report encompasses the efforts of contributors to the KSC advanced technology development program and KSC technology transfer activities. Dr. Dave Bartine, KSC Chief Technologist, (321) 867-7069, is responsible for publication of this report and should be contacted for any desired information regarding KSC's research and technology development activities.

Getting to Grips with Education and Training for Industry. A Development of the Concept of Key Technologies.

ERIC Educational Resources Information Center

Clyde, Albert

"Key technologies" is an umbrella term for appropriate technologies applied to give maximum economic benefit in particular circumstances that may cross traditional disciplinary boundaries. Development of the concept is necessitated by the rate of change of technological development. Key technologies may be classified in three groups related to…