Method of making silicon carbide-silicon composite having improved oxidation resistance

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

2002-01-01

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Silicon carbide-silicon composite having improved oxidation resistance and method of making

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

1999-01-01

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

High-temperature electronics

NASA Technical Reports Server (NTRS)

Seng, Gary T.

1987-01-01

In recent years, there was a growing need for electronics capable of sustained high-temperature operation for aerospace propulsion system instrumentation, control and condition monitoring, and integrated sensors. The desired operating temperature in some applications exceeds 600 C, which is well beyond the capability of currently available semiconductor devices. Silicon carbide displays a number of properties which make it very attractive as a semiconductor material, one of which is the ability to retain its electronic integrity at temperatures well above 600 C. An IR-100 award was presented to NASA Lewis in 1983 for developing a chemical vapor deposition process to grow single crystals of this material on standard silicon wafers. Silicon carbide devices were demonstrated above 400 C, but much work remains in the areas of crystal growth, characterization, and device fabrication before the full potential of silicon carbide can be realized. The presentation will conclude with current and future high-temperature electronics program plans. Although the development of silicon carbide falls into the category of high-risk research, the future looks promising, and the potential payoffs are tremendous.

Implementation Challenges for Sintered Silicon Carbide Fiber Bonded Ceramic Materials for High Temperature Applications

NASA Technical Reports Server (NTRS)

Singh, M.

2011-01-01

During the last decades, a number of fiber reinforced ceramic composites have been developed and tested for various aerospace and ground based applications. However, a number of challenges still remain slowing the wide scale implementation of these materials. In addition to continuous fiber reinforced composites, other innovative materials have been developed including the fibrous monoliths and sintered fiber bonded ceramics. The sintered silicon carbide fiber bonded ceramics have been fabricated by the hot pressing and sintering of silicon carbide fibers. However, in this system reliable property database as well as various issues related to thermomechanical performance, integration, and fabrication of large and complex shape components has yet to be addressed. In this presentation, thermomechanical properties of sintered silicon carbide fiber bonded ceramics (as fabricated and joined) will be presented. In addition, critical need for manufacturing and integration technologies in successful implementation of these materials will be discussed.

Development of a 30 kW Inductively Coupled Plasma Torch Facility for Advanced Aerospace Material Investigations

DTIC Science & Technology

2012-02-21

passive oxidation of zirconium diboride forms zirconia and boron oxide, and the passive oxidation of silicon carbide forms silica and carbon monoxide: ZrB2... silicon carbide composites in the ICP wind tunnels. However, this concept has never been explored as an in situ diagnostic for UHTC materials systems...Process- ing, properties, and arc jet oxidation of hafnium diboride/ silicon carbide ultra high temperature ceramics. J Mater Sci 2004;39:5925–37. 12

Ablation Resistant Zirconium and Hafnium Ceramics

NASA Technical Reports Server (NTRS)

Bull, Jeffrey (Inventor); White, Michael J. (Inventor); Kaufman, Larry (Inventor)

1998-01-01

High temperature ablation resistant ceramic composites have been made. These ceramics are composites of zirconium diboride and zirconium carbide with silicon carbide, hafnium diboride and hafnium carbide with silicon carbide and ceramic composites which contain mixed diborides and/or carbides of zirconium and hafnium. along with silicon carbide.

Deposition method for producing silicon carbide high-temperature semiconductors

DOEpatents

Hsu, George C.; Rohatgi, Naresh K.

1987-01-01

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Methods for producing silicon carbide fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garnier, John E.; Griffith, George W.

Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

Silicon carbide fibers and articles including same

DOEpatents

Garnier, John E; Griffith, George W

2015-01-27

Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

Development of a continuous spinning process for producing silicon carbide - silicon nitride precursor fibers

NASA Technical Reports Server (NTRS)

1985-01-01

An apparatus was designed for the continuous production of silicon carbide - silicon nitride precursor fibers. The precursor polymer can be fiberized, crosslined and pyrolyzed. The product is a metallic black fiber with the composition of the type C sub x Si sub y n sub z. Little, other than the tensile strength and modulus of elasticity, is known of the physical properties.

Anisotropic Tribological Properties of Silicon Carbide

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1980-01-01

The anisotropic friction, deformation and fracture behavior of single crystal silicon carbide surfaces were investigated in two categories. The categories were called adhesive and abrasive wear processes, respectively. In the adhesive wear process, the adhesion, friction and wear of silicon carbide were markedly dependent on crystallographic orientation. The force to reestablish the shearing fracture of adhesive bond at the interface between silicon carbide and metal was the lowest in the preferred orientation of silicon carbide slip system. The fracturing of silicon carbide occurred near the adhesive bond to metal and it was due to primary cleavages of both prismatic (10(-1)0) and basal (0001) planes.

Method for producing silicon nitride/silicon carbide composite

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-07-23

Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

Silicon Carbide Power Devices and Integrated Circuits

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

2017-01-01

An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

High Temperature Joining and Characterization of Joint Properties in Silicon Carbide-Based Composite Materials

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay

2015-01-01

Advanced silicon carbide-based ceramics and composites are being developed for a wide variety of high temperature extreme environment applications. Robust high temperature joining and integration technologies are enabling for the fabrication and manufacturing of large and complex shaped components. The development of a new joining approach called SET (Single-step Elevated Temperature) joining will be described along with the overview of previously developed joining approaches including high temperature brazing, ARCJoinT (Affordable, Robust Ceramic Joining Technology), diffusion bonding, and REABOND (Refractory Eutectic Assisted Bonding). Unlike other approaches, SET joining does not have any lower temperature phases and will therefore have a use temperature above 1315C. Optimization of the composition for full conversion to silicon carbide will be discussed. The goal is to find a composition with no remaining carbon or free silicon. Green tape interlayers were developed for joining. Microstructural analysis and preliminary mechanical tests of the joints will be presented.

Novel Approach for Positioning Sensor Lead Wires on SiC-Based Monolithic Ceramic and FRCMC Components/Subcomponents Having Flat and Curved Surfaces

NASA Technical Reports Server (NTRS)

Kiser, J. Douglas; Singh, Mrityunjay; Lei, Jin-Fen; Martin, Lisa C.

1999-01-01

A novel attachment approach for positioning sensor lead wires on silicon carbide-based monolithic ceramic and fiber reinforced ceramic matrix composite (FRCMC) components has been developed. This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed for the joining of silicon carbide-based ceramic and fiber reinforced composites. The ARCJoinT technique has previously been shown to produce joints with tailorable thickness and good high temperature strength. In this study, silicon carbide-based ceramic and FRCMC attachments of different shapes and sizes were joined onto silicon carbide fiber reinforced silicon carbide matrix (SiC/ SiC) composites having flat and curved surfaces. Based on results obtained in previous joining studies. the joined attachments should maintain their mechanical strength and integrity at temperatures up to 1350 C in air. Therefore they can be used to position and secure sensor lead wires on SiC/SiC components that are being tested in programs that are focused on developing FRCMCs for a number of demanding high temperature applications in aerospace and ground-based systems. This approach, which is suitable for installing attachments on large and complex shaped monolithic ceramic and composite components, should enhance the durability of minimally intrusive high temperature sensor systems. The technology could also be used to reinstall attachments on ceramic components that were damaged in service.

Powder containing 2H-type silicon carbide produced by reacting silicon dioxide and carbon powder in nitrogen atmosphere in the presence of aluminum

NASA Technical Reports Server (NTRS)

Kuramoto, N.; Takiguchi, H.

1984-01-01

The production of powder which contains silicon carbide consisting of 40% of 2H-type silicon carbide, beta type silicon carbide and less than 3% of nitrogen is discussed. The reaction temperature to produce the powder containing 40% of 2H-type silicon carbide is set at above 1550 degrees C in an atmosphere of aluminum or aluminum compounds and nitrogen gas or an antioxidation atmosphere containing nitrogen gas. The mixture ratio of silicon dioxide and carbon powder is 0.55 - 1:2.0 and the contents of aluminum or aluminum compounds within silicon dioxide is less than 3% in weight.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

NASA Technical Reports Server (NTRS)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Novel fabrication of silicon carbide based ceramics for nuclear applications

NASA Astrophysics Data System (ADS)

Singh, Abhishek Kumar

Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous silicon carbide (a-SiC) at 900--1150 °C. Results indicated that this processing technique can be effectively used to fabricate various silicon carbide composites with UC or UO2 as the nuclear component.

Low Cost Fabrication of Silicon Carbide Based Ceramics and Fiber Reinforced Composites

NASA Technical Reports Server (NTRS)

Singh, M.; Levine, S. R.

1995-01-01

A low cost processing technique called reaction forming for the fabrication of near-net and complex shaped components of silicon carbide based ceramics and composites is presented. This process consists of the production of a microporous carbon preform and subsequent infiltration with liquid silicon or silicon-refractory metal alloys. The microporous preforms are made by the pyrolysis of a polymerized resin mixture with very good control of pore volume and pore size thereby yielding materials with tailorable microstructure and composition. Mechanical properties (elastic modulus, flexural strength, and fracture toughness) of reaction-formed silicon carbide ceramics are presented. This processing approach is suitable for various kinds of reinforcements such as whiskers, particulates, fibers (tows, weaves, and filaments), and 3-D architectures. This approach has also been used to fabricate continuous silicon carbide fiber reinforced ceramic composites (CFCC's) with silicon carbide based matrices. Strong and tough composites with tailorable matrix microstructure and composition have been obtained. Microstructure and thermomechanical properties of a silicon carbide (SCS-6) fiber reinforced reaction-formed silicon carbide matrix composites are discussed.

Methods of repairing a substrate

NASA Technical Reports Server (NTRS)

Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

2011-01-01

A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium boride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

High-Efficiency Silicon Carbide (SiC) Converters. Delivery Order 0001: Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide

DTIC Science & Technology

2004-03-01

32 Silicon Dioxide as a Mask ......................................................... 34 Silicon Nitride as a Mask...phosphorous (P), and arsenic (As) for n-type material and aluminum (Al), boron (B), beryllium (Be), gallium (Ga), oxygen (O), and scandium (Sc) for...O2 in carbon tetrafluoride (CF4), nitrogen trifluoride (NF3), and sulfur hexafluoride (SF6) were observed because these gases produce high fluorine

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1997-01-01

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Silicon nitride/silicon carbide composite powders

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-06-11

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Converting a carbon preform object to a silicon carbide object

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1990-01-01

A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.

Progress in silicon carbide semiconductor technology

NASA Technical Reports Server (NTRS)

Powell, J. A.; Neudeck, P. G.; Matus, L. G.; Petit, J. B.

1992-01-01

Silicon carbide semiconductor technology has been advancing rapidly over the last several years. Advances have been made in boule growth, thin film growth, and device fabrication. This paper wi11 review reasons for the renewed interest in SiC, and will review recent developments in both crystal growth and device fabrication.

Navy Aegis Ballistic Missile Defense (BMD) Program: Background and Issues for Congress

DTIC Science & Technology

2010-09-28

co-development with Japan, for chemical vapor composite silicon carbide and silicon carbide corrugated mirror processes for the SM–3 Block IIA...all the more urgent in light of Iran’s continued uranium enrichment program. Iran continues to defy international obligations, and there continues to

The Development of Silicon Carbide Based Hydrogen and Hydrocarbon Sensors

NASA Technical Reports Server (NTRS)

Liu, Chung-Chiun

1994-01-01

Silicon carbide is a high temperature electronic material. Its potential for development of chemical sensors in a high temperature environment has not been explored. The objective of this study is to use silicon carbide as the substrate material for the construction of chemical sensors for high temperature applications. Sensors for the detection of hydrogen and hydrocarbon are developed in this program under the auspices of Lewis Research Center, NASA. Metal-semiconductor or metal-insulator-semiconductor structures are used in this development. Specifically, using palladium-silicon carbide Schottky diodes as gas sensors in the temperature range of 100 to 400 C are designed, fabricated and assessed. The effect of heat treatment on the Pd-SiC Schottky diode is examined. Operation of the sensors at 400 C demonstrate sensitivity of the sensor to hydrogen and hydrocarbons. Substantial progress has been made in this study and we believe that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures. However, the long term stability and operational life of the sensor need to be assessed. This aspect is an important part of our future continuing investigation.

Silicon nitride/silicon carbide composite densified materials prepared using composite powders

DOEpatents

Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

1997-07-01

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Silicon Carbide Capacitive High Temperature MEMS Strain Transducer

DTIC Science & Technology

2012-03-22

SILICON CARBIDE CAPACITIVE HIGH TEMPURATURE MEMS STRAIN TRANSDUCER THESIS Richard P. Weisenberger, DR01, USAF AFIT/GE/ENG...declared a work of the U.S. Government and is not subject to copyright protection in the United States AFIT/GE/ENG/12-43 SILICON CARBIDE CAPACITIVE...STATEMENT A. APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED AFIT/GE/ENG/12-43 SILICON CARBIDE CAPACITIVE IDGH TEMPURATURE MEMS STRAIN TRANSDUCER

Affordable, Robust Ceramic Joining Technology (ARCJoinT) for High Temperature Applications

NASA Technical Reports Server (NTRS)

Singh, M.

1998-01-01

Ceramic joining is recognized as one of the enabling technologies for the successful utilization of silicon carbide-based monolithic ceramic and fiber reinforced composite components in a number of demanding and high temperature applications in aerospace and ground-based systems. An affordable, robust ceramic joining technology (ARCJoinT) for joining of silicon carbide-based ceramics and fiber reinforced composites has been developed. This technique is capable of producing joints with tailorable thickness and composition. A wide variety of silicon carbide-based ceramics and composites, in different shapes and sizes, have been joined using this technique. The room and high temperature mechanical properties and fractography of ceramic joints have been reported. In monolithic silicon carbide ceramics, these joints maintain their mechanical strength up to 1350 C in air. There is no change in the mechanical strength of joints in silicon carbide matrix composites up to 1200 C in air. In composites, simple butt joints yield only about 20% of the ultimate strength of the parent materials. This technology is suitable for the joining of large and complex shaped ceramic and composite components, and with certain modifications, can be applied to repair of ceramic components damaged in service.

Comparison of the surface charge behavior of commercial silicon nitride and silicon carbide powders

NASA Technical Reports Server (NTRS)

Whitman, Pamela K.; Feke, Donald L.

1988-01-01

The adsorption and desorption of protons from aqueous solution onto the surfaces of a variety of commercial silicon carbide and silicon nitride powders has been examined using a surface titration methodology. This method provides information on some colloidal characteristics, such as the point of zero charge (pzc) and the variation of proton adsorption with dispersion pH, useful for the prediction of optimal ceramic-processing conditions. Qualitatively, the magnitude of the proton adsorption from solution reveals small differences among all of the materials studied. However, the results show that the pzc for the various silicon nitride powders is affected by the powder synthesis route. Complementary investigations have shown that milling can also act to shift the pzc exhibited by silicon nitride powder. Also, studies of the role of the electrolyte in the development of surface charge have indicated no evidence of specific adsorption of ammonium ion on either silicon nitride or silicon carbide powders.

Theoretical considerations for Reaction-Formed Silicon Carbide (RFSC) formation by molten silicon infiltration into slurry-derived preforms

NASA Technical Reports Server (NTRS)

Behrendt, D. R.; Singh, M.

1993-01-01

For reaction-formed silicon carbide (RFSC) ceramics produced by silicon melt infiltration of porous carbon preforms, equations are developed to relate the amount of residual silicon to the initial carbon density. Also, for a slurry derived preform containing both carbon and silicon powder, equations are derived which relate the amount of residual silicon in the RFSC to the relative density of the carbon in the preform and to the amount of silicon powder added to the slurry. For a porous carbon preform that does not have enough porosity to prevent choking-off of the silicon infiltration, these results show that complete silicon infiltration can occur by adding silicon powder to the slurry mixture used to produce these preforms.

High Power Silicon Carbide (SiC) Power Processing Unit Development

NASA Technical Reports Server (NTRS)

Scheidegger, Robert J.; Santiago, Walter; Bozak, Karin E.; Pinero, Luis R.; Birchenough, Arthur G.

2015-01-01

NASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance.

C-14 beta converter

NASA Astrophysics Data System (ADS)

Gurskaya, A. V.; Dolgopolov, M. V.; Chepurnov, V. I.

2017-11-01

The study discusses the prospects for the development of low-voltage power supply sources. Beta isotope sources present great advantages for autonomous uninterrupted operation of remote devices, which gives an impulse to rapid development of betavoltaics. Silicon carbide homo- and hetero-structures serve as the isotope-based energy converters. We propose a new technology for isotope-based converter fabrication using silicon carbide and carbon-14 heterostructure as the active substance.

Navy Aegis Ballistic Missile Defense (BMD) Program: Background and Issues for Congress

DTIC Science & Technology

2011-04-19

for SM-3 Block IIA co-development with Japan, for chemical vapor composite silicon carbide and silicon carbide corrugated mirror processes for the SM...to say, this concern is all the more urgent in light of Iran’s continued uranium enrichment program. Iran continues to defy international obligations

Model for the formation of silicon carbide from the pyrolysis of dichlorodimethylsilane in hydrogen. I - Silicon formation from chlorosilanes. II - Silicon carbide formation from silicon and methane

NASA Technical Reports Server (NTRS)

Cagliostro, Domenick E.; Riccitiello, Salvatore R.

1993-01-01

In the first part of this work, a model is developed for the deposition of silicon from the reduction of silicon tetrachloride with hydrogen in a tubular reactor at 700-1100 C, at atmospheric pressure. The model is based on gas chromatography of the volatile products of the reaction, followed by gravimetric analysis of total Si deposition on the tube. In the second part of this work, a model is developed for the case of SiC deposition from the pyrolysis of dichlorodimethylsilane in hydrogen under the same reactor conditions. The rate constants derived from a nonlinear regression analysis are reported.

Mechanical Testing of Silicon Carbide on MISSE-7

DTIC Science & Technology

2012-07-15

JS) ii Abstract Silicon carbide ( SiC ) mechanical test specimens were included on the second Optical and Reflector Materials Experiment (ORMatE II...2. Vendor 2 EFS Weibull Results (normalized to Extra Disks Weibull parameters) 12 1. Introduction Silicon carbide ( SiC ) mechanical test...AEROSPACE REPORT NO ATR-2012(8921)-5 Mechanical Testing of Silicon Carbide on MISSE-7 Jul> 15. 2012 David B. Witkin Space Materials Laboratory

XPS, AES and friction studies of single-crystal silicon carbide

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1982-01-01

The surface chemistry and friction behavior of a single crystal silicon carbide surface parallel to the 0001 plane in sliding contact with iron at various temperatures to 1500 C in a vacuum of 3 x 10 nPa are investigated using X-ray photoelectron and Auger electron spectroscopy. Results show that graphite and carbide-type carbon are seen primarily on the silicon carbide surface in addition to silicon at temperatures to 800 C by both types of spectroscopy. The coefficients of friction for iron sliding against a silicon carbide surface parallel to the 0001 plane surface are found to be high at temperatures up to 800 C, with the silicon and carbide-type carbon at maximum intensity in the X-ray photoelectron spectroscopy at 800 C. The concentration of the graphite increases rapidly on the surface as the temperature is increased above 800 C, while the concentrations of the carbide-type carbon and silicon decrease rapidly and this presence of graphite is accompanied by a significant decrease in friction. Preheating the surfaces to 1500 C also gives dramatically lower coefficients of friction when reheating in the sliding temperature range of from room temperature to 1200 C, with this reduction in friction due to the graphite layer on the silicon carbide surface.

Stability and rheology of dispersions of silicon nitride and silicon carbide

NASA Technical Reports Server (NTRS)

Feke, Donald L.

1987-01-01

The relationship between the surface and colloid chemistry of commercial ultra-fine silicon carbide and silicon nitride powders was examined by a variety of standard characterization techniques and by methodologies especially developed for ceramic dispersions. These include electrokinetic measurement, surface titration, and surface spectroscopies. The effects of powder pretreatment and modification strategies, which can be utilized to augment control of processing characteristics, were monitored with these technologies. Both silicon carbide and nitride were found to exhibit silica-like surface chemistries, but silicon nitride powders possess an additional amine surface functionality. Colloidal characteristics of the various nitride powders in aqueous suspension is believed to be highly dependent on the relative amounts of the two types of surface groups, which in turn is determined by the powder synthesis route. The differences in the apparent colloidal characteristics for silicon nitride powders cannot be attributed to the specific absorption of ammonium ions. Development of a model for the prediction of double-layer characteristics of materials with a hybrid site interface facilitated understanding and prediction of the behavior of both surface charge and surface potential for these materials. The utility of the model in application to silicon nitride powders was demonstrated.

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Dimensional Analysis and Extended Hydrodynamic Theory Applied to Long-Rod Penetration of Ceramics

DTIC Science & Technology

2016-07-01

thick ceramic targets by tungsten long rod projectiles. The ceramics are AD-995 alumina, aluminum nitride, silicon carbide, and boron carbide. Test...of confined thick ceramic targets by tungsten long rod projectiles. The ceramics are AD-995 alumina, aluminum nitride, silicon carbide, and boron ...since the mid 20th century. Popular candidate ceramics for such systems include alumina, aluminum nitride, boron carbide, silicon carbide, and titanium

Plasma Enabled Fabrication of Silicon Carbide Nanostructures

NASA Astrophysics Data System (ADS)

Fang, Jinghua; Levchenko, Igor; Aramesh, Morteza; Rider, Amanda E.; Prawer, Steven; Ostrikov, Kostya (Ken)

Silicon carbide is one of the promising materials for the fabrication of various one- and two-dimensional nanostructures. In this chapter, we discuss experimental and theoretical studies of the plasma-enabled fabrication of silicon carbide quantum dots, nanowires, and nanorods. The discussed fabrication methods include plasma-assisted growth with and without anodic aluminium oxide membranes and with or without silane as a source of silicon. In the silane-free experiments, quartz was used as a source of silicon to synthesize the silicon carbide nanostructures in an environmentally friendly process. The mechanism of the formation of nanowires and nanorods is also discussed.

Ceramic material suitable for repair of a space vehicle component in a microgravity and vacuum environment, method of making same, and method of repairing a space vehicle component

NASA Technical Reports Server (NTRS)

Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

2009-01-01

A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium diboride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

Tension-Compression Fatigue of an Oxide/Oxide Ceramic Matrix Composite at Elevated Temperature in Air and Steam Environments

DTIC Science & Technology

2015-03-26

method has been successfully used with several materials such as silicon carbide fiber - silicon carbide matrix ( SiC / SiC ) CMCs with carbon and boron...elements [14]. These advanced ceramics include oxides, nitrides and carbides of silicon , aluminum, titanium, and zirconium [12]. One of the most...oxides over silicon carbide and other non-oxide materials. In fact, it is the inherent stability of oxides in oxidizing environments which originally

Carbothermic reduction and prereduced charge for producing aluminum-silicon alloys

DOEpatents

Stevenson, David T.; Troup, Robert L.

1985-01-01

Disclosed is a method for the carbothermic reduction of aluminum oxide to form an aluminum alloy including producing silicon carbide by heating a first mix of carbon and silicon oxide in a combustion reactor to an elevated temperature sufficient to produce silicon carbide at an accelerated rate, the heating being provided by an in situ combustion with oxygen gas, and then admixing the silicon carbide with carbon and aluminum oxide to form a second mix and heating the second mix in a second reactor to an elevated metal-forming temperature sufficient to produce aluminum-silicon alloy. The prereduction step includes holding aluminum oxide substantially absent from the combustion reactor. The metal-forming step includes feeding silicon oxide in a preferred ratio with silicon carbide.

Characterization of SiC Fiber (SCS-6) Reinforced-Reaction-Formed Silicon Carbide Matrix Composites

NASA Technical Reports Server (NTRS)

Singh, M.; Dickerson, R. M.

1996-01-01

Silicon carbide fiber (SCS-6) reinforced-reaction-formed silicon carbide matrix composites were fabricated using a reaction-forming process. Silicon-2 at.% niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bimodal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon, and silicon. Fiber pushout tests on these composites determined a debond stress of approximately 67 MPa and a frictional stress of approximately 60 MPa. A typical four-point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pullout.

Slicing of silicon into sheet material. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project. Third quarterly report, September 20, 1976--December 19, 1976

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holden, S.C.

1976-12-27

The stability of tensioned blades used in multiblade sawing does not seem to be the limitation in cutting with thin blades. So far, 0.010 cm thick blades have been totally unsuccessful. Recently, 0.015 cm blades have proven successful in wafering, offering an 0.005 cm reduction in the silicon used per slice. The failure of thin blades is characterized as a possible result of blade misalignment or from the inherent uncontrollability of the loose abrasive multiblade process. Corrective procedures will be employed in the assembly of packages to eliminate one type of blade misalignment. Two ingots were sliced with the samemore » batch of standard silicon carbide abrasive slurry to determine the useful lifetime of this expendable material. After 250 slices, the cutting efficiency had not degraded. Further tests will be continued to establish the maximum lifetime of both silicon carbide and boron carbide abrasive. Electron microscopy will be employed to evaluate the wear of abrasive particles in the failure of abrasive slurry. The surface damage of silicon wafers has been characterized as predominantly subsurface fracture. Damage with No. 600 SiC is between 10 and 15 microns into the wafer surface. This agrees well with previous investigations of damage from silicon carbide abrasive papers.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide beingmore » shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boccard, Mathieu; Holman, Zachary C.

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

DOE PAGES

Boccard, Mathieu; Holman, Zachary C.

2015-08-14

With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

Silicon carbide ceramic production

NASA Technical Reports Server (NTRS)

Suzuki, K.; Shinohara, N.

1984-01-01

A method to produce sintered silicon carbide ceramics in which powdery carbonaceous components with a dispersant are mixed with silicon carbide powder, shaped as required with or without drying, and fired in nonoxidation atmosphere is described. Carbon black is used as the carbonaceous component.

Analysis of the pyrolysis products of dimethyldichlorosilane in the chemical vapor deposition of silicon carbide in argon

NASA Technical Reports Server (NTRS)

Cagliostro, Domenick E.; Riccitiello, Salvatore R.; Carswell, Marty G.

1990-01-01

A study of the products and reactions occurring during the chemical vapor deposition of silicon carbide from dimethyldichlorosilane in argon is presented. Reaction conditions were as follows: 700 to 1100 C, a contact time of about 1 min, and a pressure of 1 atm. At these conditions, the gases that formed were mainly methane, hydrogen, silicon tetrachloride, trichlorosilane, and methyltrichlorosilane. The silicon carbide solid that formed showed the presence of hydrogen and chloride as impurities, which might degrade the silicon carbide properties. These impurities were eliminated slowly, even at 1100 C, forming hydrogen, trichlorosilane, and silicon tetrachloride.

Colloidal characterization of silicon nitride and silicon carbide

NASA Technical Reports Server (NTRS)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Flexural strength of proof-tested and neutron-irradiated silicon carbide

NASA Astrophysics Data System (ADS)

Price, R. J.; Hopkins, G. R.

1982-08-01

Proof testing before service is a valuable method for ensuring the reliability of ceramic structures. Silicon carbide has been proposed as a very low activation first-wall and blanket structural material for fusion devices, where it would experience a high flux of fast neutrons. Strips of three types of silicon carbide were loaded in four-point bending to a stress sufficient to break about a third of the specimens. Groups of 16 survivors were irradiated to 2 × 10 26n/ m2 ( E>0.05 MeV) at 740°C and bend tested to failure. The strength distribution of chemically vapor-deposited silicon carbide (Texas Instruments) was virtually unchanged by irradiation. The mean strength of sintered silicon carbide (Carborundum Alpha) was reduced 34% by irradiation, while the Weibull modulus and the truncated strength distribution characteristic of proof-tested material were retained. Irradiation reduced the mean strength of reaction-bonded silicon carbide (Norton NC-430) by 58%, and the spread in strength values was increased. We conclude that for the chemically vapor-deposited and the sintered silicon carbide the benefits of proof testing to eliminate low strength material are retained after high neutron exposures.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, A.V.; Balooch, M.; Moalem, M.

1999-01-19

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

Process for forming silicon carbide films and microcomponents

DOEpatents

Hamza, Alex V.; Balooch, Mehdi; Moalem, Mehran

1999-01-01

Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

Size dependence of nanoscale wear of silicon carbide

Treesearch

Chaiyapat Tangpatjaroen; David Grierson; Steve Shannon; Joseph E. Jakes; Izabela Szlufarska

2017-01-01

Nanoscale, single-asperity wear of single-crystal silicon carbide (sc- SiC) and nanocrystalline silicon carbide (nc-SiC) is investigated using single-crystal diamond nanoindenter tips and nanocrystalline diamond atomic force microscopy (AFM) tips under dry conditions, and the wear behavior is compared to that of single-crystal silicon with both thin and thick native...

Molybdenum disilicide composites reinforced with zirconia and silicon carbide

DOEpatents

Petrovic, John J.

1995-01-01

Compositions consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

Advanced ceramic material for high temperature turbine tip seals

NASA Technical Reports Server (NTRS)

Solomon, N. G.; Vogan, J. W.

1978-01-01

Ceramic material systems are being considered for potential use as turbine blade tip gas path seals at temperatures up to 1370 1/4 C. Silicon carbide and silicon nitride structures were selected for study since an initial analysis of the problem gave these materials the greatest potential for development into a successful materials system. Segments of silicon nitride and silicon carbide materials over a range of densities, processed by various methods, a honeycomb structure of silicon nitride and ceramic blade tip inserts fabricated from both materials by hot pressing were tested singly and in combination. The evaluations included wear under simulated engine blade tip rub conditions, thermal stability, impact resistance, machinability, hot gas erosion and feasibility of fabrication into engine components. The silicon nitride honeycomb and low-density silicon carbide using a selected grain size distribution gave the most promising results as rub-tolerant shroud liners. Ceramic blade tip inserts made from hot-pressed silicon nitride gave excellent test results. Their behavior closely simulated metal tips. Wear was similar to that of metals but reduced by a factor of six.

Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

NASA Technical Reports Server (NTRS)

Tanaka, Hidehiko

1987-01-01

A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

Molybdenum disilicide composites reinforced with zirconia and silicon carbide

DOEpatents

Petrovic, J.J.

1995-01-17

Compositions are disclosed consisting essentially of molybdenum disilicide, silicon carbide, and a zirconium oxide component. The silicon carbide used in the compositions is in whisker or powder form. The zirconium oxide component is pure zirconia or partially stabilized zirconia or fully stabilized zirconia.

Characterization of SiC (SCS-6) Fiber Reinforced Reaction-Formed Silicon Carbide Matrix Composites

NASA Technical Reports Server (NTRS)

Singh, Mrityunjay; Dickerson, Robert M.

1995-01-01

Silicon carbide (SCS-6) fiber reinforced-reaction formed silicon carbide matrix composites were fabricated using NASA's reaction forming process. Silicon-2 at a percent of niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bi-modal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon and silicon. Fiber push-out tests on these composites determined a debond stress of approx. 67 MPa and a frictional stress of approx. 60 MPa. A typical four point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pull out.

Carbothermic reduction and prereduced charge for producing aluminum-silicon alloys

DOEpatents

Stevenson, D.T.; Troup, R.L.

1985-01-01

Disclosed is a method for the carbothermic reduction of aluminum oxide to form an aluminum alloy including producing silicon carbide by heating a first mix of carbon and silicon oxide in a combustion reactor to an elevated temperature sufficient to produce silicon carbide at an accelerated rate, the heating being provided by an in situ combustion with oxygen gas, and then admixing the silicon carbide with carbon and aluminum oxide to form a second mix and heating the second mix in a second reactor to an elevated metal-forming temperature sufficient to produce aluminum-silicon alloy. The prereduction step includes holding aluminum oxide substantially absent from the combustion reactor. The metal-forming step includes feeding silicon oxide in a preferred ratio with silicon carbide. 1 fig.

High Temperature Silicon Carbide (SiC) Traction Motor Drive

DTIC Science & Technology

2011-08-09

UNCLASSIFIED Distribution Statement A. Approved for public release; distribution is unlimited. UNCLASSIFIED HIGH TEMPERATURE SILICON CARBIDE...be modular and conveniently distributed. Small component size and operation with high - temperature liquid coolant are essential factors in the...these densities, power modules capable of high - temperature operation were developed using SiC normally-off JFETs. This paper will discuss the unique

Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

NASA Astrophysics Data System (ADS)

Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

2018-03-01

Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

NT-SiC (new-technology silicon carbide) : Φ 650mm optical space mirror substrate of high-strength reaction-sintered silicon carbide

NASA Astrophysics Data System (ADS)

Suyama, Shoko; Itoh, Yoshiyasu; Tsuno, Katsuhiko; Ohno, Kazuhiko

2005-08-01

Silicon carbide (SiC) is the most advantageous as the material of various telescope mirrors, because of high stiffness, low density, low coefficient of thermal expansion, high thermal conductivity and thermal stability. Newly developed high-strength reaction-sintered silicon carbide (NTSIC), which has two times higher strength than sintered SiC, is one of the most promising candidates for lightweight optical mirror substrate, because of fully dense, lightweight, small sintering shrinkage (+/-1 %), good shape capability and low processing temperature. In this study, 650mm in diameter mirror substrate of NTSIC was developed for space telescope applications. Three developed points describe below. The first point was to realize the lightweight to thin the thickness of green bodies. Ribs down to 3mm thickness can be obtained by strengthen the green body. The second point was to enlarge the mirror size. 650mm in diameter of mirror substrate can be fabricated with enlarging the diameter in order. The final point was to realize the homogeneity of mirror substrate. Some properties, such as density, bending strength, coefficient of thermal expansion, Young's modulus, Poisson's ratio, fracture toughness, were measured by the test pieces cutting from the fabricated mirror substrates.

Materials Analysis of Transient Plasma-Wall Interactions

DTIC Science & Technology

2014-05-13

such as copper, aluminum, zirconium, titanium, and tungsten) and ceramics (beryllia, aluminum nitride, silicon carbide , etc.). These materials were...formation of silicon carbide . Therefore, a flat Macor disk was polished, and prepared for deuterium exposure by sonicating the sample in both methanol...of silicon constituents whereas the exposed sample clearly shows the addition of carbide and silicon segregation on the surface. 10 AFOSR

Method for silicon carbide production by reacting silica with hydrocarbon gas

DOEpatents

Glatzmaier, G.C.

1994-06-28

A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400 C to 1000 C where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100 C to 1600 C to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process. 5 figures.

Method for silicon carbide production by reacting silica with hydrocarbon gas

DOEpatents

Glatzmaier, Gregory C.

1994-01-01

A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400.degree. C. to 1000.degree. C. where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100.degree. C. to 1600.degree. C. to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

DOEpatents

Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

2014-05-27

A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

Advanced lightweight optics development for space applications

NASA Astrophysics Data System (ADS)

Bilbro, James W.

1998-01-01

A considerable amount of effort over the past year has been devoted to exploring ultra-lightweight optics for two specific NASA programs, the Next Generation Space Telescope (NGST), and the High Throughput X-ray Spectrometer (HTXS). Experimental investigations have been undertaken in a variety of materials including glass, composites, nickel, beryllium, Carbon fiber reinforced Silicon Carbide (CSiC), Reaction Bonded Silicon Carbide, Chemical Vapor Deposited Silicon Carbide, and Silicon. Overall results of these investigations will be summarized, and specific details will be provided concerning the in-house development of ultra-lightweight nickel replication for both grazing incidence and normal incidence optics. This will include x-ray test results of the grazing incidence optic and cryogenic test results of the normal incidence optic. The status of two 1.5 meter diameter demonstration mirrors for NGST will also be presented. These two demonstrations are aimed at establishing the capability to manufacture and test mirrors that have an areal density of 15 kilograms per square meter. Efforts in thin membrane mirrors and Fresnel lenses will also be briefly discussed.

Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density

PubMed Central

Son, In Hyuk; Hwan Park, Jong; Kwon, Soonchul; Park, Seongyong; Rümmeli, Mark H.; Bachmatiuk, Alicja; Song, Hyun Jae; Ku, Junhwan; Choi, Jang Wook; Choi, Jae-man; Doo, Seok-Gwang; Chang, Hyuk

2015-01-01

Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge–discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l−1 at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology. PMID:26109057

Manufacture of silicon carbide using solar energy

DOEpatents

Glatzmaier, Gregory C.

1992-01-01

A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Dynamic Modulus and Damping of Boron, Silicon Carbide, and Alumina Fibers

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.; Williams, W.

1980-01-01

The dynamic modulus and damping capacity for boron, silicon carbide, and silicon carbide coated boron fibers were measured from-190 to 800 C. The single fiber vibration test also allowed measurement of transverse thermal conductivity for the silicon carbide fibers. Temperature dependent damping capacity data for alumina fibers were calculated from axial damping results for alumina-aluminum composites. The dynamics fiber data indicate essentially elastic behavior for both the silicon carbide and alumina fibers. In contrast, the boron based fibers are strongly anelastic, displaying frequency dependent moduli and very high microstructural damping. Ths single fiber damping results were compared with composite damping data in order to investigate the practical and basic effects of employing the four fiber types as reinforcement for aluminum and titanium matrices.

Tribological properties of silicon carbide in metal removal process

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1980-01-01

Material properties are considered as they relate to adhesion, friction, and wear of single crystal silicon carbide in contact with metals and alloys that are likely to be involved in a metal removal process such as grinding. Metal removal from adhesion between sliding surfaces in contact and metal removal as a result of the silicon carbide sliding against a metal, indenting into it, and plowing a series of grooves or furrows are discussed. Fracture and deformation characteristics of the silicon carbide surface are also covered. The adhesion, friction, and metal transfer to silicon carbide is related to the relative chemical activity of the metals. The more active the metal, the higher the adhesion and friction, and the greater the metal transfer to silicon carbide. Atomic size and content of alloying elements play a dominant role in controlling adhesion, friction, and abrasive wear properties of alloys. The friction and abrasive wear (metal removal) decrease linearly as the shear strength of the bulk metal increases. They decrease as the solute to solvent atomic radius ratio increases or decreases linearly from unity, and with an increase of solute content. The surface fracture of silicon carbide is due to cleavages of 0001, 10(-1)0, and/or 11(-2)0 planes.

Development of x-ray mask in Taiwan

NASA Astrophysics Data System (ADS)

Sheu, Jeng Tzong; Su, Shyang

1996-05-01

This paper presents results of using silicon carbide (SiC) and silicon-rich silicon nitride (SiNx) as membrane for X-ray masks in technology of X-ray lithography. Microcrystalline silicon carbide film was deposited on silicon substrate by electron synchrotron resonance plasma-enhanced chemical vapor deposition at 300 degrees C utilizing a SiH4/CH4/H2/Ar gas mixture. Low tensile stress film which is suitable as X-ray membrane can be achieved by annealing after silicon carbide film deposition. The microwave power over 800 watts and the gas ratio (Methane:Silane) larger than 1.5 are needed for the stoichiometry of SiC film. On the other hand, we deposited silicon-rich silicon nitride film on silicon substrate by low pressure chemical vapor deposition at 850 degrees C to 900 degrees C. In order to get low tensile stress film, different gas flow ratios (Dichlorosilane:Ammonia) were tested. The increased gas flow ratio (Dichlorosilane:Ammonia) and the increased deposition temperature are related to the decrease of tensile stress of film. Roughness, uniformity, optical transmittance and soft X-ray transmission of both films are reported. The absorption bands of both films were measured by FTIR spectroscopy. The surface morphology was monitored by AFM. The photon transmission of both films was measured in the range of 400 to 800 nm for visible light and 800 to 1600 ev photon energy for SR soft X-ray transmission was conducted at the Synchrotron Radiation Research Center, Hsinchu, Taiwan. The deposition rate of both films are 13 nm/min and 40 nm/min for silicon nitride and silicon carbide, respectively.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Effects of Heat Treatment on SiC-SiC Ceramic Matrix Composites

NASA Astrophysics Data System (ADS)

Knauf, Michael W.

Residual stresses resulting from the manufacturing process found within a silicon carbide/silicon carbide (SiC/SiC) ceramic matrix composite were thoroughly investigated through the use of high-energy X-ray diffraction and Raman microspectroscopy. The material system studied was a Rolls-Royce composite produced with Hi-Nicalon fibers woven into a five harness satin weave, coated with boron nitride and silicon carbide interphases, and subsequently infiltrated with silicon carbide particles and a silicon matrix. Constituent stress states were measured before, during, and after heat treatments ranging from 900 °C to 1300 °C for varying times between one and sixty minutes. Stress determination methods developed through these analyses can be utilized in the development of ceramic matrix composites and other materials employing boron-doped silicon. X-ray diffraction experiments were performed at the Argonne National Laboratory Advanced Photon Source to investigate the evolution of constituent stresses through heat treatment, and determine how stress states are affected at high temperature through in situ measurements during heat treatments up to 1250 °C for 30 minutes. Silicon carbide particles in the as-received condition exhibited a nearly isotropic stress state with average tensile stresses of approximately 300 MPa. The silicon matrix exhibited a complimentary average compressive stress of approximately 300 MPa. Strong X-ray diffraction evidence is presented demonstrating solid state boron diffusion and increased boron solubility found in silicon throughout heat treatment. While the constituent stress states did evolve through the heat treatment cycles, including approaching nearly stress-free conditions at temperatures close to the manufacturing temperature, no permanent relaxation of stress was observed. Raman spectroscopy was utilized to investigate stresses found within silicon carbide particles embedded within the matrix and the silicon matrix as an alternate method of measurement. The stresses determined through Raman spectroscopy were comparable to those determined through X-ray diffraction. Neither silicon carbide particles nor silicon were significantly affected through heat treatment, corroborating the X-ray diffraction results. Silicon present near fibers exhibited less compressive stress than the majority of silicon found throughout the matrix. Measurements were taken in situ and ex situ to determine the temporal evolution of the stress state at various temperatures. Heat treatments up to 1300 °C for one hour failed to produce significant changes in the residual stress state of the composite constituents. A strong trend was identified in the Raman silicon signal manifesting a continuously decreasing wavenumber with increasing heat treatment temperature between 1100 °C and 1300 °C in timeframes of less than one minute. This was found to be due to a continuously increasing electronic activation of boron within the silicon matrix, stemming from an increase of boron atoms occupying substitutional silicon lattice sites while covalently bonded to surrounding silicon. A methodology to determine the residual stress state of silicon exhibiting varying degrees of boron dopant is proposed by accounting for the changes in the Raman profile parameters. This method also allows for observing activated boron segregation in various matrix areas; wavenumber gradients in these areas exist which have been misconstrued in literature as large variations in stress, while in fact the variability is likely relatively benign.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

2002-01-01

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

1999-01-01

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Surface chemistry and wear behavior of single-crystal silicon carbide sliding against iron at temperatures to 1500 C in vacuum

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1982-01-01

X-ray photoelectron and Auger electron spectroscopy analyses and morphological studies of wear and metal transfer were conducted with a single-crystal silicon carbide 0001 surface in contact with iron at various temperatures to 1500 C in a vacuum of 10 to the minus 8th power pascal. The results indicate that below 800 C, carbide-carbon and silicon are primarily seen on the silicon carbide surface. Above 800 C the graphite increases rapidly with increase in temperature. The outermost surficial layer, which consists mostly of graphite and little silicon at temperatures above 1200 C is about 2 nm thick. A thicker layer, which consists of a mixture of graphite, carbide, and silicon is approximately 100 nm thick. The closer the surface sliding temperature is to 800 C, the more the metal transfer produced. Above 800 C, there was a transfer of rough, discontinuous, and thin iron debris instead of smooth, continuous and thin iron film which was observed to transfer below 800 C. Two kinds of fracture pits were observed on the silicon carbide surface: (1) a pit with a spherical asperity; and (2) multiangular shaped pits.

Friction and wear behavior of single-crystal silicon carbide in sliding contact with various metals

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1978-01-01

Sliding friction experiments were conducted with single-crystal silicon carbide in contact with various metals. Results indicate the coefficient of friction is related to the relative chemical activity of the metals. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to silicon carbide. The chemical activity of the metal and its shear modulus may play important roles in metal transfer, the form of the wear debris and the surface roughness of the metal wear scar. The more active the metal, and the less resistance to shear, the greater the transfer to silicon carbide and the rougher the wear scar on the surface of the metal. Hexagon shaped cracking and fracturing formed by cleavage of both prismatic and basal planes is observed on the silicon carbide surface.

Diffusion Bonding of Silicon Carbide for a Micro-Electro-Mechanical Systems Lean Direct Injector

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay; Shpargel, Tarah P.; Kiser, James D.

2006-01-01

Robust approaches for joining silicon carbide (SiC) to silicon carbide sub-elements have been developed for a micro-electro-mechanical systems lean direct injector (MEMS LDI) application. The objective is to join SiC sub-elements to form a leak-free injector that has complex internal passages for the flow and mixing of fuel and air. Previous bonding technology relied upon silicate glass interlayers that were not uniform or leak free. In a newly developed joining approach, titanium foils and physically vapor deposited titanium coatings were used to form diffusion bonds between SiC materials during hot pressing. Microscopy results show the formation of well adhered diffusion bonds. Initial tests show that the bond strength is much higher than required for the component system. Benefits of the joining technology are fabrication of leak free joints with high temperature and mechanical capability.

Ceramic matrix composites - Forerunners of technological breakthrough in space vehicle hot structures and thermal protection system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lacombe, A.; Rouges, J.

1990-01-01

The current status of carbon-carbon and carbon-silicon carbide composites developed for aerospace applications is reviewed. In particular, attention is given to production facilities and technologies for the manufacture of C-C and C-SiC composites, mechanical and thermal characteristics of carbon-carbon and carbon-silicon carbide materials, applications to thermal structures and protection, and technologies developed to build large C-SiC thermostructural components within the Hermes program. 9 refs.

Mirror Technology

NASA Technical Reports Server (NTRS)

1992-01-01

Under a NASA contract, MI-CVD developed a process for producing bulk silicon carbide by means of a chemical vapor deposition process. The technology allows growth of a high purity material with superior mechanical/thermal properties and high polishability - ideal for mirror applications. The company employed the technology to develop three research mirrors for NASA Langley and is now marketing it as CVD SILICON CARBIDE. Its advantages include light weight, thermal stability and high reflectivity. The material has nuclear research facility applications and is of interest to industrial users of high power lasers.

High-sensitivity x-ray mask damage studies employing holographic gratings and phase-shifting interferometry

NASA Astrophysics Data System (ADS)

Hansen, Matthew E.; Cerrina, Franco

1994-05-01

A high-sensitivity holographic and interferometric metrology developed at the Center for X- ray Lithography (CXrL) has been employed to investigate in-plane distortions (IPD) produced in x-ray mask materials. This metrology has been applied to characterize damage to x-ray mask materials exposed to synchrotron radiation. X-ray mask damage and accelerated mask damage studies on silicon nitride and silicon carbide were conducted on the Aladdin ES-1 and ES-2 beamline exposure stations, respectively. Accumulated in-plane distortions due to x-ray irradiation were extracted from the incremental interferometric phase maps to yield IPD vs. dose curves for silicon nitride mask blanks. Silicon carbide mask blanks were subjected to accelerated mask damage in the high flux 2 mm X 2 mm beam of the ES-2 exposure station. An accelerated damage study of silicon carbide has shown no in-plane distortion for an accumulated dose of 800 kJ/cm2 with a measurement sensitivity of less than 5 nm.

Formation mechanism of a silicon carbide coating for a reinforced carbon-carbon composite

NASA Technical Reports Server (NTRS)

Rogers, D. C.; Shuford, D. M.; Mueller, J. I.

1975-01-01

Results are presented for a study to determine the mechanisms involved in a high-temperature pack cementation process which provides a silicon carbide coating on a carbon-carbon composite. The process and materials used are physically and chemically analyzed. Possible reactions are evaluated using the results of these analytical data. The coating is believed to develop in two stages. The first is a liquid controlled phase process in which silicon carbide is formed due to reactions between molten silicon metal and the carbon. The second stage is a vapor transport controlled reaction in which silicon vapors react with the carbon. There is very little volume change associated with the coating process. The original thickness changes by less than 0.7%. This indicates that the coating process is one of reactive penetration. The coating thickness can be increased or decreased by varying the furnace cycle process time and/or temperature to provide a wide range of coating thicknesses.

Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo for Fabrication with 0.09-micron High Electron Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC)

DTIC Science & Technology

2016-03-01

Fabrication with 0.09-µm High-Electron-Mobility Transistors (HEMTs) Using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC) by John E Penn...for Fabrication with 0.09-µm High-Electron-Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide by John E Penn...µm High-Electron-Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c

Changes in surface chemistry of silicon carbide (0001) surface with temperature and their effect on friction

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1980-01-01

Friction studies were conducted with a silicon carbide (0001) surface contacting polycrystalline iron. The surface of silicon carbide was pretreated: (1) by bombarding it with argon ions for 30 minutes at a pressure of 1.3 pascals; (2) by heating it at 800 C for 3 hours in vacuum at a pressure of 10 to the minus eighth power pascal; or (3) by heating it at 1500 C for 3 hours in a vacuum of 10 to the minus eighth power pascal. Auger emission spectroscopy was used to determine the presence of silicon and carbon and the form of the carbon. The surfaces of silicon carbide bombarded with argon ions or preheated to 800 C revealed the main Si peak and a carbide type of C peak in the Auger spectra. The surfaces preheated to 1500 C revealed only a graphite type of C peak in the Auger spectra, and the Si peak had diminished to a barely perceptible amount. The surfaces of silicon carbide preheated to 800 C gave a 1.5 to 3 times higher coefficient of friction than did the surfaces of silicon carbide preheated to 1500 C. The coefficient of friction was lower in the 11(-2)0 direction than in the 10(-1)0 direction; that is, it was lower in the preferred crystallographic slip direction.

Development and Characterization of the Bonding and Integration Technologies Needed for Fabricating Silicon Carbide Based Injector Components

NASA Technical Reports Server (NTRS)

Halbig,Michael C.; Singh, Mrityunjay

2008-01-01

Advanced ceramic bonding and integration technologies play a critical role in the fabrication and application of silicon carbide based components for a number of aerospace and ground based applications. One such application is a lean direct injector for a turbine engine to achieve low NOx emissions. Ceramic to ceramic diffusion bonding and ceramic to metal brazing technologies are being developed for this injector application. For the diffusion bonding technology, titanium interlayers (coatings and foils) were used to aid in the joining of silicon carbide (SiC) substrates. The influence of such variables as surface finish, interlayer thickness, and processing time were investigated. Electron microprobe analysis was used to identify the reaction formed phases. In the diffusion bonds, an intermediate phase, Ti5Si3Cx, formed that is thermally incompatible in its thermal expansion and caused thermal stresses and cracking during the processing cool-down. Thinner interlayers of pure titanium and/or longer processing times resulted in an optimized microstructure. Tensile tests on the joined materials resulted in strengths of 13-28 MPa depending on the SiC substrate material. Nondestructive evaluation using ultrasonic immersion showed well formed bonds. For the joining technology of brazing Kovar fuel tubes to silicon carbide, preliminary development of the joining approach has begun. Various technical issues and requirements for the injector application are addressed.

Synthesis of multifilament silicon carbide fibers by chemical vapor deposition

NASA Technical Reports Server (NTRS)

Revankar, Vithal; Hlavacek, Vladimir

1991-01-01

A process for development of clean silicon carbide fiber with a small diameter and high reliability is presented. An experimental evaluation of operating conditions for SiC fibers of good mechanical properties and devising an efficient technique which will prevent welding together of individual filaments are discussed. The thermodynamic analysis of a different precursor system was analyzed vigorously. Thermodynamically optimum conditions for stoichiometric SiC deposit were obtained.

Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films.

PubMed

Chang, Geng-Rong; Ma, Fei; Ma, Dayan; Xu, Kewei

2011-12-01

Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing at 1100 degrees C, this configuration of silicon quantum dots embedded in amorphous silicon carbide formed. X-ray photoelectron spectroscopy was used to study the chemical modulation of the films. The formation and orientation of silicon quantum dots were characterized by glancing angle X-ray diffraction, which shows that the ratio of silicon and carbon significantly influences the species of quantum dots. High-resolution transmission electron microscopy investigations directly demonstrated that the formation of silicon quantum dots is heavily dependent on the annealing temperatures and the ratio of silicon and carbide. Only the temperature of about 1100 degrees C is enough for the formation of high-density and small-size silicon quantum dots due to phase separation and thermal crystallization. Deconvolution of the first order Raman spectra shows the existence of a lower frequency peak in the range 500-505 cm(-1) corresponding to silicon quantum dots with different atom ratio of silicon and carbon.

Engine materials characterization and damage monitoring by using x ray technologies

NASA Technical Reports Server (NTRS)

Baaklini, George Y.

1993-01-01

X ray attenuation measurement systems that are capable of characterizing density variations in monolithic ceramics and damage due to processing and/or mechanical testing in ceramic and intermetallic matrix composites are developed and applied. Noninvasive monitoring of damage accumulation and failure sequences in ceramic matrix composites is used during room-temperature tensile testing. This work resulted in the development of a point-scan digital radiography system and an in situ x ray material testing system. The former is used to characterize silicon carbide and silicon nitride specimens, and the latter is used to image the failure behavior of silicon-carbide-fiber-reinforced, reaction-bonded silicon nitride matrix composites. State-of-the-art x ray computed tomography is investigated to determine its capabilities and limitations in characterizing density variations of subscale engine components (e.g., a silicon carbide rotor, a silicon nitride blade, and a silicon-carbide-fiber-reinforced beta titanium matrix rod, rotor, and ring). Microfocus radiography, conventional radiography, scanning acoustic microscopy, and metallography are used to substantiate the x ray computed tomography findings. Point-scan digital radiography is a viable technique for characterizing density variations in monolithic ceramic specimens. But it is very limited and time consuming in characterizing ceramic matrix composites. Precise x ray attenuation measurements, reflecting minute density variations, are achieved by photon counting and by using microcollimators at the source and the detector. X ray computed tomography is found to be a unique x ray attenuation measurement technique capable of providing cross-sectional spatial density information in monolithic ceramics and metal matrix composites. X ray computed tomography is proven to accelerate generic composite component development. Radiographic evaluation before, during, and after loading shows the effect of preexisting volume flaws on the fracture behavior of composites. Results from one-, three-, five-, and eight-ply ceramic composite specimens show that x ray film radiography can monitor damage accumulation during tensile loading. Matrix cracking, fiber-matrix debonding, fiber bridging, and fiber pullout are imaged throughout the tensile loading of the specimens. In situ film radiography is found to be a practical technique for estimating interfacial shear strength between the silicon carbide fibers and the reaction-bonded silicon nitride matrix. It is concluded that pretest, in situ, and post-test x ray imaging can provide greater understanding of ceramic matrix composite mechanical behavior.

Mechanical Properties and Microstructure of Biomorphic Silicon Carbide Ceramics Fabricated from Wood Precursors

NASA Technical Reports Server (NTRS)

Singh, Mrityunjay; Salem, J. A.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Silicon carbide based, environment friendly, biomorphic ceramics have been fabricated by the pyrolysis and infiltration of natural wood (maple and mahogany) precursors. This technology provides an eco-friendly route to advanced ceramic materials. These biomorphic silicon carbide ceramics have tailorable properties and behave like silicon carbide based materials manufactured by conventional approaches. The elastic moduli and fracture toughness of biomorphic ceramics strongly depend on the properties of starting wood preforms and the degree of molten silicon infiltration. Mechanical properties of silicon carbide ceramics fabricated from maple wood precursors indicate the flexural strengths of 3441+/-58 MPa at room temperature and 230136 MPa at 1350C. Room temperature fracture toughness of the maple based material is 2.6 +/- 0.2 MPa(square root of)m while the mahogany precursor derived ceramics show a fracture toughness of 2.0 +/- 0.2 Mpa(square root of)m. The fracture toughness and the strength increase as the density of final material increases. Fractographic characterization indicates the failure origins to be pores and chipped pockets of silicon.

Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt

NASA Technical Reports Server (NTRS)

Ciszek, T. F.; Schwuttke, G. H. (Inventor)

1979-01-01

A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.

New Polymeric Precursors of Silicon Carbide

NASA Technical Reports Server (NTRS)

Litt, M.; Kumar, K.

1987-01-01

Silicon carbide made by pyrolizing polymers. Method conceived for preparation of poly(decamethylcyclohexasilanes) as precursors for preparation of silicon carbide at high yield. Technical potential of polysilanes as precursors of SiC ceramics being explored. Potential limited by intractability of some polysilanes; formation of small, cyclic polycarbosilane fragments during pyrolysis; and overall low char yield and large shrinkage in conversion to ceramics.

Dispersion toughened ceramic composites and method for making same

DOEpatents

Stinton, David P.; Lackey, Walter J.; Lauf, Robert J.

1986-01-01

Ceramic composites exhibiting increased fracture toughness are produced by the simultaneous codeposition of silicon carbide and titanium disilicide by chemical vapor deposition. A mixture of hydrogen, methyltrichlorosilane and titanium tetrachloride is introduced into a furnace containing a substrate such as graphite or silicon carbide. The thermal decomposition of the methyltrichlorosilane provides a silicon carbide matrix phase and the decomposition of the titanium tetrachloride provides a uniformly dispersed second phase of the intermetallic titanium disilicide within the matrix phase. The fracture toughness of the ceramic composite is in the range of about 6.5 to 7.0 MPa.sqroot.m which represents a significant increase over that of silicon carbide.

Dispersion toughened ceramic composites and method for making same

DOEpatents

Stinton, D.P.; Lackey, W.J.; Lauf, R.J.

1984-09-28

Ceramic composites exhibiting increased fracture toughness are produced by the simultaneous codeposition of silicon carbide and titanium disilicide by chemical vapor deposition. A mixture of hydrogen, methyltrichlorosilane and titanium tetrachloride is introduced into a furnace containing a substrate such as graphite or silicon carbide. The thermal decomposition of the methyltrichlorosilane provides a silicon carbide matrix phase and the decomposition of the titanium tetrachloride provides a uniformly dispersed second phase of the intermetallic titanium disilicide within the matrix phase. The fracture toughness of the ceramic composite is in the range of about 6.5 to 7.0 MPa..sqrt..m which represents a significant increase over that of silicon carbide.

A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials

NASA Technical Reports Server (NTRS)

Hurley, John S.

1990-01-01

Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

Detonation Synthesis of Alpha-Variant Silicon Carbide

NASA Astrophysics Data System (ADS)

Langenderfer, Martin; Johnson, Catherine; Fahrenholtz, William; Mochalin, Vadym

2017-06-01

A recent research study has been undertaken to develop facilities for conducting detonation synthesis of nanomaterials. This process involves a familiar technique that has been utilized for the industrial synthesis of nanodiamonds. Developments through this study have allowed for experimentation with the concept of modifying explosive compositions to induce synthesis of new nanomaterials. Initial experimentation has been conducted with the end goal being synthesis of alpha variant silicon carbide (α-SiC) in the nano-scale. The α-SiC that can be produced through detonation synthesis methods is critical to the ceramics industry because of a number of unique properties of the material. Conventional synthesis of α-SiC results in formation of crystals greater than 100 nm in diameter, outside nano-scale. It has been theorized that the high temperature and pressure of an explosive detonation can be used for the formation of α-SiC in the sub 100 nm range. This paper will discuss in detail the process development for detonation nanomaterial synthesis facilities, optimization of explosive charge parameters to maximize nanomaterial yield, and introduction of silicon to the detonation reaction environment to achieve first synthesis of nano-sized alpha variant silicon carbide.

Low Cost Solar Array Project. Feasibility of the silane process for producing semiconductor-grade silicon. Final report, October 1975-March 1979

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1979-06-01

The commercial production of low-cost semiconductor-grade silicon is an essential requirement of the JPL/DOE (Department of Energy) Low-Cost Solar Array (LSA) Project. A 1000-metric-ton-per-year commercial facility using the Union Carbide Silane Process will produce molten silicon for an estimated price of $7.56/kg (1975 dollars, private financing), meeting the DOE goal of less than $10/kg. Conclusions and technology status are reported for both contract phases, which had the following objectives: (1) establish the feasibility of Union Carbide's Silane Process for commercial application, and (2) develop an integrated process design for an Experimental Process System Development Unit (EPSDU) and a commercial facility,more » and estimate the corresponding commercial plant economic performance. To assemble the facility design, the following work was performed: (a) collection of Union Carbide's applicable background technology; (b) design, assembly, and operation of a small integrated silane-producing Process Development Unit (PDU); (c) analysis, testing, and comparison of two high-temperature methods for converting pure silane to silicon metal; and (d) determination of chemical reaction equilibria and kinetics, and vapor-liquid equilibria for chlorosilanes.« less

Silicon carbide - Progress in crystal growth

NASA Technical Reports Server (NTRS)

Powell, J. Anthony

1987-01-01

Recent progress in the development of two processes for producing large-area high-quality single crystals of SiC is described: (1) a modified Lely process for the growth of the alpha polytypes (e.g., 6H SiC) initially developed by Tairov and Tsvetkov (1978, 1981) and Ziegler et al. (1983), and (2) a process for the epitaxial growth of the beta polytype on single-crystal silicon or other substrates. Growth of large-area cubic SiC on Si is described together with growth of defect-free beta-SiC films on alpha-6H SiC crystals and TiC lattice. Semiconducting qualities of silicon carbide crystals grown by various techniques are discussed.

Diamond-silicon carbide composite

DOEpatents

Qian, Jiang; Zhao, Yusheng

2006-06-13

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m^1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Diamond-Silicon Carbide Composite And Method For Preparation Thereof

DOEpatents

Qian, Jiang; Zhao, Yusheng

2005-09-06

Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5-8 GPa, T=1400K-2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.multidot.m.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed-Energy Capability

DTIC Science & Technology

2017-03-01

Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed- Energy Capability Damian Urciuoli, Miguel Hinojosa, and Ronald Green US...were pulse tested in an inductive load circuit at peak powers of over 110 kW. Total pulsed- energy dissipation was kept nearly the same among the...voltages about which design provides the highest pulsed- energy capability. Keywords: Avalanche; Breakdown; Diode; Silicon Carbide Introduction

SiC Design Guide: Manufacture of Silicon Carbide Products (Briefing charts)

DTIC Science & Technology

2010-06-08

DISTRIBUTION STATEMENT A: Approved for public release; distribution is unlimited. 13. SUPPLEMENTARY NOTES Presented at Mirror Technology Days, Boulder...coatings. 15. SUBJECT TERMS Mirrors , structures, silicon carbide, design, inserts, coatings, pockets, ribs, bonding, threads 16. SECURITY...Prescribed by ANSI Std. 239.18 purify protect transport SiC Design Guide Manufacture of Silicon Carbide Products Mirror Technology Days June 7 to 9, 2010

Improved silicon carbide for advanced heat engines

NASA Technical Reports Server (NTRS)

Whalen, Thomas J.; Mangels, J. A.

1986-01-01

The development of silicon carbide materials of high strength was initiated and components of complex shape and high reliability were formed. The approach was to adapt a beta-SiC powder and binder system to the injection molding process and to develop procedures and process parameters capable of providing a sintered silicon carbide material with improved properties. The initial effort was to characterize the baseline precursor materials, develop mixing and injection molding procedures for fabricating test bars, and characterize the properties of the sintered materials. Parallel studies of various mixing, dewaxing, and sintering procedures were performed in order to distinguish process routes for improving material properties. A total of 276 modulus-of-rupture (MOR) bars of the baseline material was molded, and 122 bars were fully processed to a sinter density of approximately 95 percent. Fluid mixing techniques were developed which significantly reduced flaw size and improved the strength of the material. Initial MOR tests indicated that strength of the fluid-mixed material exceeds the baseline property by more than 33 percent. the baseline property by more than 33 percent.

A comparative study of the constitutive models for silicon carbide

NASA Astrophysics Data System (ADS)

Ding, Jow-Lian; Dwivedi, Sunil; Gupta, Yogendra

2001-06-01

Most of the constitutive models for polycrystalline silicon carbide were developed and evaluated using data from either normal plate impact or Hopkinson bar experiments. At ISP, extensive efforts have been made to gain detailed insight into the shocked state of the silicon carbide (SiC) using innovative experimental methods, viz., lateral stress measurements, in-material unloading measurements, and combined compression shear experiments. The data obtained from these experiments provide some unique information for both developing and evaluating material models. In this study, these data for SiC were first used to evaluate some of the existing models to identify their strength and possible deficiencies. Motivated by both the results of this comparative study and the experimental observations, an improved phenomenological model was developed. The model incorporates pressure dependence of strength, rate sensitivity, damage evolution under both tension and compression, pressure confinement effect on damage evolution, stiffness degradation due to damage, and pressure dependence of stiffness. The model developments are able to capture most of the material features observed experimentally, but more work is needed to better match the experimental data quantitatively.

Harsh Environment Silicon Carbide Sensor Technology for Geothermal Instrumentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pisano, Albert P.

2013-04-26

This project utilizes Silicon Carbide (SiC) materials platform to fabricate advanced sensors to be used as high-temperature downhole instrumentation for the DOE’s Geothermal Technologies Program on Enhanced Geothermal Systems. The scope of the proposed research is to 1) develop a SiC pressure sensor that can operate in harsh supercritical conditions, 2) develop a SiC temperature sensor that can operate in harsh supercritical conditions, 3) develop a bonding process for adhering SiC sensor die to well casing couplers, and 4) perform experimental exposure testing of sensor materials and the sensor devices.

Accident tolerant fuel cladding development: Promise, status, and challenges

NASA Astrophysics Data System (ADS)

Terrani, Kurt A.

2018-04-01

The motivation for transitioning away from zirconium-based fuel cladding in light water reactors to significantly more oxidation-resistant materials, thereby enhancing safety margins during severe accidents, is laid out. A review of the development status for three accident tolerant fuel cladding technologies, namely coated zirconium-based cladding, ferritic alumina-forming alloy cladding, and silicon carbide fiber-reinforced silicon carbide matrix composite cladding, is offered. Technical challenges and data gaps for each of these cladding technologies are highlighted. Full development towards commercial deployment of these technologies is identified as a high priority for the nuclear industry.

Emission of blue light from hydrogenated amorphous silicon carbide

NASA Astrophysics Data System (ADS)

Nevin, W. A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y.

1994-04-01

THE development of new electroluminescent materials is of current technological interest for use in flat-screen full-colour displays1. For such applications, amorphous inorganic semiconductors appear particularly promising, in view of the ease with which uniform films with good mechanical and electronic properties can be deposited over large areas2. Luminescence has been reported1 in the red-green part of the spectrum from amorphous silicon carbide prepared from gas-phase mixtures of silane and a carbon-containing species (usually methane or ethylene). But it is not possible to achieve blue luminescence by this approach. Here we show that the use of an aromatic species-xylene-as the source of carbon during deposition results in a form of amorphous silicon carbide that exhibits strong blue luminescence. The underlying structure of this material seems to be an unusual combination of an inorganic silicon carbide lattice with a substantial 'organic' π-conjugated carbon system, the latter dominating the emission properties. Moreover, the material can be readily doped with an electron acceptor in a manner similar to organic semiconductors3, and might therefore find applications as a conductivity- or colour-based chemical sensor.

Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix

NASA Astrophysics Data System (ADS)

Coscia, U.; Ambrosone, G.; Basa, D. K.

2008-03-01

The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf power in high vacuum plasma enhanced chemical vapor deposition system using silane methane gas mixture highly diluted in hydrogen. In this paper, we have studied the evolution of the structural, optical, and electrical properties of this material as a function of rf power. We have observed visible photoluminescence at room temperature and also have discussed the role played by the Si nanocrystallites and the amorphous silicon carbide matrix. The decrease of the nanocrystalline size, responsible for quantum confinement effect, facilitated by the amorphous silicon carbide matrix, is shown to be the primary cause for the increase in the PL intensity, blueshift of the PL peak position, decrease of the PL width (full width at half maximum) as well as the increase of the optical band gap and the decrease of the dark conductivity.

Joining of porous silicon carbide bodies

DOEpatents

Bates, Carl H.; Couhig, John T.; Pelletier, Paul J.

1990-05-01

A method of joining two porous bodies of silicon carbide is disclosed. It entails utilizing an aqueous slip of a similar silicon carbide as was used to form the porous bodies, including the sintering aids, and a binder to initially join the porous bodies together. Then the composite structure is subjected to cold isostatic pressing to form a joint having good handling strength. Then the composite structure is subjected to pressureless sintering to form the final strong bond. Optionally, after the sintering the structure is subjected to hot isostatic pressing to further improve the joint and densify the structure. The result is a composite structure in which the joint is almost indistinguishable from the silicon carbide pieces which it joins.

Study on Surface Roughness of Modified Silicon Carbide Mirrors polished by Magnetorheological Finishing

NASA Astrophysics Data System (ADS)

Du, Hang; Song, Ci; Li, Shengyi

2018-01-01

In order to obtain high precision and high surface quality silicon carbide mirrors, the silicon carbide mirror substrate is subjected to surface modification treatment. In this paper, the problem of Silicon Carbide (SiC) mirror surface roughness deterioration by MRF is studied. The reasons of surface flaws of “Comet tail” are analyzed. Influence principle of MRF polishing depth and the surface roughness of modified SiC mirrors is obtained by experiments. On this basis, the united process of modified SiC mirrors is proposed which is combined MRF with the small grinding head CCOS. The united process makes improvement in the surface accuracy and surface roughness of modified SiC mirrors.

Ultrasonic Guided-Wave Scan System Used to Characterize Microstructure and Defects in Ceramic Composites

NASA Technical Reports Server (NTRS)

Roth, Don J.; Cosgriff, Laura M.; Martin, Richard E.; Verrilli, Michael J.; Bhatt, Ramakrishna T.

2004-01-01

Ceramic matrix composites (CMCs) are being developed for advanced aerospace propulsion applications to save weight, improve reuse capability, and increase performance. However, mechanical and environmental loads applied to CMCs can cause discrete flaws and distributed microdamage, significantly reducing desirable physical properties. Such microdamage includes fiber/matrix debonding (interface failure), matrix microcracking, fiber fracture and buckling, oxidation, and second phase formation. A recent study (ref. 1) of the durability of a C/SiC CMC discussed the requirement for improved nondestructive evaluation (NDE) methods for monitoring degradation in these materials. Distributed microdamage in CMCs has proven difficult to characterize nondestructively because of the complex microstructure and macrostructure of these materials. This year, an ultrasonic guided-wave scan system developed at the NASA Glenn Research Center was used to characterize various microstructural and flaw conditions in SiC/SiC (silicon carbide fiber in silicon carbide matrix) and C/SiC (carbon fiber in silicon carbide matrix) CMC samples.

Electro-Thermal Transient Simulation of Silicon Carbide Power Mosfet

DTIC Science & Technology

2013-06-01

ionization rate than electron in silicon carbide , the breakdown voltage almost remains constant even at elevated temperatures . This is due to the positive... temperature coefficient of holes in case of silicon carbide as discussed in [7, 8]. The higher ambient temperature influences the leakage current...in the RLC ring down circuit . E. Power Dissipation and Lattice Temperature The power dissipation for any switching device is dependent on the

Selective etching of silicon carbide films

DOEpatents

Gao, Di; Howe, Roger T.; Maboudian, Roya

2006-12-19

A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

Edge on Impact Simulations and Experiments

DTIC Science & Technology

2013-09-01

silicon carbide ( SiC ) and aluminum oxynitride (AlON) ceramics are predicted using the Kayenta macroscopic constitutive model. Aspects regarding...damage propagation. 2.1. Silicon Carbide SiC is an opaque ceramic explored by the armor community. It is perhaps the most extensively characterized...the Weibull modulus for SiC . 4.1. Silicon Carbide Figures 3 and 4 compare experimental images with model predictions of EOI of SiC targets at respective

Minimizing Actuator-Induced Residual Error in Active Space Telescope Primary Mirrors

DTIC Science & Technology

2010-09-01

actuator geometry, and rib-to-facesheet intersection geometry are exploited to achieve improved performance in silicon carbide ( SiC ) mirrors . A...are exploited to achieve improved performance in silicon carbide ( SiC ) mirrors . A parametric finite element model is used to explore the trade space...MOST) finite element model. The move to lightweight actively-controlled silicon carbide ( SiC ) mirrors is traced back to previous generations of space

R&D100: 6.5kV Enhancement-Mode Silicon Carbide JFET Switch

ScienceCinema

Dries, Chris; Hostetler, John; Atcitty, Stan

2018-06-12

Researchers at Sandia National Laboratories have partnered with United Silicon Carbide, Inc. to combine advanced materials with novel manufacturing ideas to build a new product for significantly more efficient power conversion. Harnessing the unique features of silicon carbide, this first of its kind device allows higher voltage switching, and reductions in switching losses to significantly boost the efficiency and reliability of power generation and power conversion.

Rapid fabrication of a silicon modification layer on silicon carbide substrate.

PubMed

Bai, Yang; Li, Longxiang; Xue, Donglin; Zhang, Xuejun

2016-08-01

We develop a kind of magnetorheological (MR) polishing fluid for the fabrication of a silicon modification layer on a silicon carbide substrate based on chemical theory and actual polishing requirements. The effect of abrasive concentration in MR polishing fluid on material removal rate and removal function shape is investigated. We conclude that material removal rate will increase and tends to peak value as the abrasive concentration increases to 0.3 vol. %, and the removal function profile will become steep, which is a disadvantage to surface frequency error removal at the same time. The removal function stability is also studied and the results show that the prepared MR polishing fluid can satisfy actual fabrication requirements. An aspheric reflective mirror of silicon carbide modified by silicon is well polished by combining magnetorheological finishing (MRF) using two types of MR polishing fluid and computer controlled optical surfacing (CCOS) processes. The surface accuracy root mean square (RMS) is improved from 0.087λ(λ=632.8  nm) initially to 0.020λ(λ=632.8  nm) in 5.5 h total and the tool marks resulting from MRF are negligible. The PSD analysis results also shows that the final surface is uniformly polished.

Development of the SOFIA silicon carbide secondary mirror

NASA Astrophysics Data System (ADS)

Fruit, Michel; Antoine, Pascal; Varin, Jean-Luc; Bittner, Hermann; Erdmann, Matthias

2003-02-01

The SOFIA telescope is ajoint NASA-DLR project for a 2.5 m airborne Stratospheric Observatory for IR Astronomy to be flown in a specially adapted Boeing 747 SP plane, Kayser-Threde being resopinsible for the development of the Telescope Optics. The φ 352 mm Secondary Mirror is mounted ona chopping mechanism to allow avoidance of background noise during IR observations. Stiffness associated to lightness is a major demand for such a mirror to achieve high frequency chopping. This leads to select SIlicon Carbide for the mirror blank. Its development has been run by the ASTRIUM/BOOSTEC joint venture SiCSPACE, taking full benefit of the instrinsic properties of the BOOSTEC SiC-100 sintered material, associated to qualified processes specifically developed for space borne mirrors by ASTRIUM. Achieved performances include a low mass of 1.97 kg, a very high stiffness with a first resonant frequency of 1865 Hz and a measured optical surface accuracy of 39 nm rms, using Ion Beam Figuring. It is proposed here to present the major design features of the SOFIA Secondary Mirror, highlighting the main advantages of using Silicon Carbide, the main steps of its development and the achieved optomechanical performances of the developed mirror.

Time-Dependent Stress Rupture Strength Degradation of Hi-Nicalon Fiber-Reinforced Silicon Carbide Composites at Intermediate Temperatures

NASA Technical Reports Server (NTRS)

Sullivan, Roy M.

2016-01-01

The stress rupture strength of silicon carbide fiber-reinforced silicon carbide composites with a boron nitride fiber coating decreases with time within the intermediate temperature range of 700 to 950 degree Celsius. Various theories have been proposed to explain the cause of the time-dependent stress rupture strength. The objective of this paper is to investigate the relative significance of the various theories for the time-dependent strength of silicon carbide fiber-reinforced silicon carbide composites. This is achieved through the development of a numerically based progressive failure analysis routine and through the application of the routine to simulate the composite stress rupture tests. The progressive failure routine is a time-marching routine with an iterative loop between a probability of fiber survival equation and a force equilibrium equation within each time step. Failure of the composite is assumed to initiate near a matrix crack and the progression of fiber failures occurs by global load sharing. The probability of survival equation is derived from consideration of the strength of ceramic fibers with randomly occurring and slow growing flaws as well as the mechanical interaction between the fibers and matrix near a matrix crack. The force equilibrium equation follows from the global load sharing presumption. The results of progressive failure analyses of the composite tests suggest that the relationship between time and stress-rupture strength is attributed almost entirely to the slow flaw growth within the fibers. Although other mechanisms may be present, they appear to have only a minor influence on the observed time-dependent behavior.

Silicon nitride sintered body

NASA Technical Reports Server (NTRS)

Suzuki, K.; Shinohara, N.

1984-01-01

The sintering of silicon carbide and it production are described. The method of production is by calcination in which molding is followed by sintering without compression. The invention improves the composition of the silicon carbide ceramic. Six examples of the invention are illustrated and discussed.

Near-infrared luminescent cubic silicon carbide nanocrystals for in vivo biomarker applications: an ab initio study

NASA Astrophysics Data System (ADS)

Somogyi, Bálint; Zólyomi, Viktor; Gali, Adam

2012-11-01

Molecule-sized fluorescent emitters are much sought-after to probe biomolecules in living cells. We demonstrate here by time-dependent density functional calculations that the experimentally achievable 1-2 nm sized silicon carbide nanocrystals can emit light in the near-infrared region after introducing appropriate color centers in them. These near-infrared luminescent silicon carbide nanocrystals may act as ideal fluorophores for in vivo bioimaging.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Habermehl, Scott D.

Described methods are useful for depositing a silicon carbide film including Alpha-SiC at low temperatures (e.g., below about 1400.degree. C.), and resulting multi-layer structures and devices. A method includes introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a reaction chamber, and reacting the chlorinated hydrocarbon gas with the chlorosilicon gas at a temperature of less than about 1400.degree. C. to grow the silicon carbide film. The silicon carbide film so-formed includes Alpha-SiC.

Joined ceramic product

DOEpatents

Henager, Jr., Charles W [Kennewick, WA; Brimhall, John L [West Richland, WA

2001-08-21

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

Method of joining ceramics

DOEpatents

Henager, Jr., Charles H.; Brimhall, John L.

2000-01-01

According to the method of the present invention, joining a first bi-element carbide to a second bi-element carbide, has the steps of: (a) forming a bond agent containing a metal carbide and silicon; (b) placing the bond agent between the first and second bi-element carbides to form a pre-assembly; and (c) pressing and heating the pre-assembly in a non-oxidizing atmosphere to a temperature effective to induce a displacement reaction creating a metal silicon phase bonding the first and second bi-element carbides.

Selecting mirror materials for high-performance optical systems

NASA Astrophysics Data System (ADS)

Parsonage, Thomas B.

1990-11-01

The properties of four candidate mirror materials--beryllium, silicon carbide, a silicon carbide/aluminum iretal-matrix carposite and aluminum--are corrpared. Because of its high specific stiffness and dirrensional stability under changing mschanical and thermal loads , beryllium is the best choice . Berjllium mirrors have been made irore cost-conpetitive by new processing technologies in which mirror blanks are isostatically pressed to near-net shape directly fran beiyllium pc1ers. Isostatic pressing also improves material properties and mskes it possible to develop mirror rraterials with superior properties.

Development of Spacecraft Materials and Structures Fundamentals.

DTIC Science & Technology

1985-08-01

900. This is comparable to the dihedral angle observed in uranium dioxide’ ° and silicon carbide ,’ 2 which...necesjary and identify by bigich numberp FIELD GROUP I suB. GR. Boron carbide , sintering, grain growth, microstructure, microcracking, mechanical...Compacts of boron carbide powders with specific surface area >, 8 m2 / were sintered in argon at temperatures near 2200*C. Several of these powders were

Net shape fabrication of Alpha Silicon Carbide turbine components

NASA Technical Reports Server (NTRS)

Storm, R. S.

1982-01-01

Development of Alpha Silicon Carbide components by net shape fabrication techniques has continued in conjunction with several turbine engine programs. Progress in injection molding of simple parts has been extended to much larger components. Turbine rotors fabricated by a one piece molding have been successfully spin tested above design speeds. Static components weighing up to 4.5 kg and 33 cc in diameter have also been produced using this technique. Use of sintering fixtures significantly improves dimensional control. A new Si-SiC composite material has also been developed with average strengths up to 1000 MPa (150 ksi) at 1200 C.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurementsmore » indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.« less

Silicon Carbide Monofilament Reinforced Titanium Composites For Space Structures: A New Material Option

NASA Astrophysics Data System (ADS)

Kyle-Henney, Stephen; Flitcroft, Stephen; Shatwell, Robert; Gibbon, David; Voss, Gary; Harkness, Patrick

2012-07-01

Silicon carbide fibre reinforced titanium composite material has been in development since the 1980s initially for high temperature structures on hypersonic vehicles (HOTOL, NASP). Since then development has focused on military and civil aircraft. Development in the European Union has reached a level of maturity where it is again being considered for space applications. Current activities include pressure vessels and studies for launch vehicles and satellite applications. The paper provides background to the technology key performance characteristics current application work and future activities. The renewed interest in hypersonic vehicles has also picked up on the potential for lightweight metallic composites.

Cleaning up Silicon

NASA Technical Reports Server (NTRS)

2000-01-01

A development program that started in 1975 between Union Carbide and JPL, led to Advanced Silicon Materials LLC's, formerly ASiMI, commercial process for producing silane in viable quantities. The process was expanded to include the production of high-purity polysilicon for electronic devices. The technology came out of JPL's Low Cost Silicon Array Project.

Surface Figure Measurement of Silicon Carbide Mirrors at Cryogenic Temperatures

NASA Technical Reports Server (NTRS)

Blake, Peter; Mink, Ronald G.; Chambers, John; Robinson, F. David; Content, David; Davila, Pamela

2005-01-01

The surface figure of a developmental silicon carbide mirror, cooled to 87 K and then 20 K within a cryostat, was measured with unusually high precision at the Goddard Space Flight Center (GSFC). The concave spherical mirror, with a radius of 600 mm and a clear aperture of 150 mm, was fabricated of sintered silicon carbide. The mirror was mounted to an interface plate representative of an optical bench, made of the material Cesic@, a composite of silicon, carbon, and silicon carbide. The change in optical surface figure as the mirror and interface plate cooled from room temperature to 20 K was 3.7 nm rms, with a standard uncertainty of 0.23 nm in the rms statistic. Both the cryo-change figure and the uncertainty are among the lowest such figures yet published. This report describes the facilities, experimental methods, and uncertainty analysis of the measurements.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

1995-01-01

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Density Determination and Metallographic Surface Preparation of Electron Beam Melted Ti6Al4V

DTIC Science & Technology

2015-06-02

Electron Microscopy SiC Silicon Carbide Ti6Al4V Titanium-6Aluminum-4Vanadium WRNMMC Walter Reed National Military Medical Center Wd Dry...polishing with silicon carbide ( SiC ) papers and colloidal silica suspension to produce samples with varying surface topographies. Surfaces were...manufacturing process. For titanium alloys, the grinding media typically used is silicon carbide ( SiC ) paper. Table 1 lists grades of SiC papers that are

Method for forming fibrous silicon carbide insulating material

DOEpatents

Wei, G.C.

1983-10-12

A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

Method for forming fibrous silicon carbide insulating material

DOEpatents

Wei, George C.

1984-01-01

A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

Bonding and Integration Technologies for Silicon Carbide Based Injector Components

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay

2008-01-01

Advanced ceramic bonding and integration technologies play a critical role in the fabrication and application of silicon carbide based components for a number of aerospace and ground based applications. One such application is a lean direct injector for a turbine engine to achieve low NOx emissions. Ceramic to ceramic diffusion bonding and ceramic to metal brazing technologies are being developed for this injector application. For the diffusion bonding, titanium interlayers (PVD and foils) were used to aid in the joining of silicon carbide (SiC) substrates. The influence of such variables as surface finish, interlayer thickness (10, 20, and 50 microns), processing time and temperature, and cooling rates were investigated. Microprobe analysis was used to identify the phases in the bonded region. For bonds that were not fully reacted an intermediate phase, Ti5Si3Cx, formed that is thermally incompatible in its thermal expansion and caused thermal stresses and cracking during the processing cool-down. Thinner titanium interlayers and/or longer processing times resulted in stable and compatible phases that did not contribute to microcracking and resulted in an optimized microstructure. Tensile tests on the joined materials resulted in strengths of 13-28 MPa depending on the SiC substrate material. Non-destructive evaluation using ultrasonic immersion showed well formed bonds. For the joining technology of brazing Kovar fuel tubes to silicon carbide, preliminary development of the joining approach has begun. Various technical issues and requirements for the injector application are addressed.

Mechanical Property Evaluation at Elevated Temperatures of Sintered Beta Silicon Carbide.

DTIC Science & Technology

1986-03-01

a co mercial- sintered product. 1-7 It is fabricated from a submicron (beta) silicon carbide powder with small additions (f-0.5 wtZ each) of goron and...majority of the material-is beta silicon carbide with a small percentage of the alpha phase and a small amount of graphite. In a parallel study being...surface-connected porosity (Figures 12 and 13). This porosity was often an area of small interconnected porosity and not necessarily a discrete void

Ultrathin fiber poly-3-hydroxybutyrate, modified by silicon carbide nanoparticles

NASA Astrophysics Data System (ADS)

Olkhov, A. A.; Krutikova, A. A.; Goldshtrakh, M. A.; Staroverova, O. V.; Iordanskii, A. L.; Ischenko, A. A.

2016-11-01

The article presents the results of studies the composite fibrous material based on poly-3-hydroxybutyrate (PHB) and nano-size silicon carbide obtained by the electrospinning method. Size distribution of the silicon carbide nanoparticles in the fiber was estimated by X-ray diffraction technique. It is shown that immobilization of the SiC nanoparticles to the PHB fibers contributes to obtaining essentially smaller diameter of fibers, high physical-mechanical characteristics and increasing resistance to degradation in comparison with the fibers of PHB.

Displacement Damage Induced Catastrophic Second Breakdown in Silicon Carbide Schottky Power Diodes

NASA Technical Reports Server (NTRS)

Scheick, Leif; Selva, Luis; Selva, Luis

2004-01-01

A novel catastrophic breakdown mode in reversed biased Silicon carbide diodes has been seen for low LET particles. These particles are too low in LET to induce SEB, however SEB was seen from particles of higher LET. The low LET mechanism correlates with second breakdown in diodes due to increase leakage and assisted charge injection from incident particles. Percolation theory was used to predict some basic responses of the devices, but the inherent reliability issue with silicon carbide have proven challenging.

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

NASA Technical Reports Server (NTRS)

Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

2001-01-01

A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

NASA Technical Reports Server (NTRS)

Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

2000-01-01

A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Whatever happened to silicon carbide. [semiconductor devices

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1981-01-01

The progress made in silicon carbide semiconductor devices in the 1955 to 1975 time frame is examined and reasons are given for the present lack of interest in the material. Its physical and chemical properties and methods of preparation are discussed. Fabrication techniques and the characteristics of silicon carbide devices are reviewed. It is concluded that a combination of economic factors and the lack of progress in fabrication techniques leaves no viable market for SiC devices in the near future.

Improved silicon carbide for advanced heat engines

NASA Technical Reports Server (NTRS)

Whalen, T. J.; Winterbottom, W. L.

1986-01-01

Work performed to develop silicon carbide materials of high strength and to form components of complex shape and high reliability is described. A beta-SiC powder and binder system was adapted to the injection molding process and procedures and process parameters developed capable of providing a sintered silicon carbide material with improved properties. The initial effort has been to characterize the baseline precursor materials (beta silicon carbide powder and boron and carbon sintering aids), develop mixing and injection molding procedures for fabricating test bars, and characterize the properties of the sintered materials. Parallel studies of various mixing, dewaxing, and sintering procedures have been carried out in order to distinguish process routes for improving material properties. A total of 276 MOR bars of the baseline material have been molded, and 122 bars have been fully processed to a sinter density of approximately 95 percent. The material has a mean MOR room temperature strength of 43.31 ksi (299 MPa), a Weibull characteristic strength of 45.8 ksi (315 MPa), and a Weibull modulus of 8.0. Mean values of the MOR strengths at 1000, 1200, and 14000 C are 41.4, 43.2, and 47.2 ksi, respectively. Strength controlling flaws in this material were found to consist of regions of high porosity and were attributed to agglomerates originating in the initial mixing procedures. The mean stress rupture lift at 1400 C of five samples tested at 172 MPa (25 ksi) stress was 62 hours and at 207 MPa (30 ksi) stress was 14 hours. New fluid mixing techniques have been developed which significantly reduce flaw size and improve the strength of the material. Initial MOR tests indicate the strength of the fluid-mixed material exceeds the baseline property by more than 33 percent.

Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

NASA Technical Reports Server (NTRS)

Evans, Laura J.; Okojie, Robert S.; Lukco, Dorothy

2011-01-01

We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

Process for coating an object with silicon carbide

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1989-01-01

A process for coating a carbon or graphite object with silicon carbide by contacting it with silicon liquid and vapor over various lengths of contact time. In the process, a stream of silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a co-reactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into a reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. The precursor gas is decomposed directly to silicon in the reaction chamber. A stream of any decomposition gas and any unreacted precursor gas from said reaction chamber is removed. The object within the reaction chamber is then contacted with silicon, and recovered after it has been coated with silicon carbide.

Increased voltage photovoltaic cell

NASA Technical Reports Server (NTRS)

Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

1985-01-01

A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

Property Screening and Evaluation of Ceramic Turbine Materials

DTIC Science & Technology

1984-04-01

Unless otherwise indicated, the upper and lower spans were 0.875 and 1.750 in., respectively. For room-temperature tests, a stainless steel fixture...Silicon Nitride High Temperature Properties Silicon Carbide Silicon Ceramics Transformation-Toughened Zirconia Structural Ceramics Mechanical Properties...3ilicon carbide and silicon nitride, that have potential as structural components in"advanced gas turbine engines, were evaluated. Thermal and

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

NASA Astrophysics Data System (ADS)

Cunning, Benjamin V.; Ahmed, Mohsin; Mishra, Neeraj; Ranjbar Kermany, Atieh; Wood, Barry; Iacopi, Francesca

2014-08-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.

High temperature range recuperator. Phase I: materials selection, design optimization, evaluation and thermal testing. Final report, April 1977-May 1978

DOE Office of Scientific and Technical Information (OSTI.GOV)

Power, D V

1978-06-01

Initial efforts to develop, test, and evaluate counterflow recuperator designs are reported for the High Temperature Range Recuperator project. Potential materials to withstand glass furnace exhaust environments at temperatures up to 2800/sup 0/F were evaluated on the bases of material properties, fabrication capability, and relative performance in the flue environment of a day tank glass furnace. Polycrystalline alumina (Vistal), reaction sintered silicon carbide (KT and NC 430), chemically vapor deposited silicon carbide (CVD) and sintered alpha silicon carbide proved most satisfactory in the material temperature range of 2300/sup 0/F to 2800/sup 0/F. Relatively pure alumina (AD 998 and AD 94),more » mullite and cordierite were most satisfactory in the material temperature range of 1700/sup 0/F to 2300/sup 0/F. Recuperator designs were evaluated on the bases of cold air flow tests on laboratory models, fabricability, and calculated thermomechanical stress under expected operating conditions. Material strengths are shown to be greater than expected stresses by factors ranging from 2.6 for KT silicon carbide to 16 for cordierite. Recuperator test sections were fabricated from KT silicon carbide and subjected to thermal stress conditions in excess of twice the expected operating conditions with no deterioration or failure evident. A test section was subjected to the thermal shock of instant transfer between room temperature and a 2000/sup 0/F furnace without damage. Economic analysis based on calculated heat transfer indicates a recuperator system of this design and using currently available materials would have a payback period of 2.3 years.« less

Use of silicon carbide sludge to form porous alkali-activated materials for insulating application

NASA Astrophysics Data System (ADS)

Prud'homme, E.; Joussein, E.; Rossignol, S.

2015-07-01

One of the objectives in the field of alkali-activated materials is the development of materials having greater thermal performances than conventional construction materials such as aerated concrete. The aim of this paper is to present the possibility to obtain controlled porosity and controlled thermal properties with geopolymer materials including a waste like silicon carbide sludge. The porosity is created by the reaction of free silicon contains in silicon carbide sludge leading to the formation of hydrogen. Two possible ways are investigated to control the porosity: modification of mixture formulation and additives introduction. The first way is the most promising and allowed the formation of materials presenting the same density but various porosities, which shows that the material is adaptable to the application. The insulation properties are logically linked to the porosity and density of materials. A lower value of thermal conductivity of 0.075 W.m-1.K-1 can be reached for a material with a low density of 0.27 g.cm-3. These characteristics are really good for a mineral-based material which always displays non-negligible resistance to manipulation.

Quantifying the Effects of the Influence of a Tungsten Long-rod Projectile into Confined Ceramics at High-velocity Impact

DTIC Science & Technology

2008-01-29

be conducted to demonstrate how the confined, brittle samples behave. The study shows that silicon carbide and boron carbide are the optimal...Exposition on Advanced Ceramics and Composites - 27 JAN to 1 FEB 2008, Daytona Beach, FL, The original document contains color images. 14. ABSTRACT 15...specimens investigated were aluminum nitride, boron carbide, 9606 pyroceram, and silicon carbide. The confining sleeve was modeled with RHA and had a

Micromachining of silicon carbide on silicon fabricated by low-pressure chemical vapour deposition

NASA Astrophysics Data System (ADS)

Behrens, Ingo; Peiner, Erwin; Bakin, Andrey S.; Schlachetzki, Andreas

2002-07-01

We describe the fabrication of silicon carbide layers for micromechanical applications using low-pressure metal-organic chemical vapour deposition at temperatures below 1000 °C. The layers can be structured by lift-off using silicon dioxide as a sacrificial layer. A large selectivity with respect to silicon can be exploited for bulk micromachining. Thin membranes are fabricated which exhibit high mechanical quality, as necessary for applications in harsh environments.

Method for Forming Fiber Reinforced Composite Bodies with Graded Composition and Stress Zones

NASA Technical Reports Server (NTRS)

Singh, Mrityunjay (Inventor); Levine, Stanley R. (Inventor); Smialek, James A. (Inventor)

1999-01-01

A near-net, complex shaped ceramic fiber reinforced silicon carbide based composite bodies with graded compositions and stress zones is disclosed. To provide the composite a fiber preform is first fabricated and an interphase is applied by chemical vapor infiltration, sol-gel or polymer processes. This first body is further infiltrated with a polymer mixture containing carbon, and/or silicon carbide, and additional oxide, carbide, or nitride phases forming a second body. One side of the second body is spray coated or infiltrated with slurries containing high thermal expansion and oxidation resistant. crack sealant phases and the other side of this second body is coated with low expansion phase materials to form a third body. This third body consisting of porous carbonaceous matrix surrounding the previously applied interphase materials, is then infiltrated with molten silicon or molten silicon-refractory metal alloys to form a fourth body. The resulting fourth body comprises dense composites consisting of fibers with the desired interphase which are surrounded by silicon carbide and other second phases materials at the outer and inner surfaces comprising material of silicon, germanium, refractory metal suicides, borides, carbides, oxides, and combinations thereof The resulting composite fourth body has different compositional patterns from one side to the other.

Silicon Carbide Transistor For Detecting Hydrocarbon Gases

NASA Technical Reports Server (NTRS)

Shields, Virgil B.; Ryan, Margaret A.; Williams, Roger M.

1996-01-01

Proposed silicon carbide variable-potential insulated-gate field-effect transistor specially designed for use in measuring concentrations of hydrocarbon gases. Devices like this prove useful numerous automotive, industrial, aeronautical, and environmental monitoring applications.

Synthesis of thermal and chemical resistant oxygen barrier starch with reinforcement of nano silicon carbide.

PubMed

Dash, Satyabrata; Swain, Sarat K

2013-09-12

Starch/silicon carbide (starch/SiC) bionanocomposites were synthesized by solution method using different wt% of silicon carbide with starch matrix. The interaction between starch and silicon carbide was studied by Fourier transform infrared (FTIR) spectroscopy. The structure of the bionanocomposites was investigated by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). Thermal property of starch/SiC bionanocomposites was measured and a significant enhancement of thermal resistance was noticed. The oxygen barrier property of the composites was studied and a substantial reduction in permeability was observed as compared to the virgin starch. The reduction of oxygen permeability with enhancement of thermal stability of prepared bionanocomposites may enable the materials suitable for thermal resistant packaging and adhesive applications. Copyright © 2013 Elsevier Ltd. All rights reserved.

Electrochemical stability and postmortem studies of Pt/SiC catalysts for polymer electrolyte membrane fuel cells.

PubMed

Stamatin, Serban N; Speder, Jozsef; Dhiman, Rajnish; Arenz, Matthias; Skou, Eivind M

2015-03-25

In the presented work, the electrochemical stability of platinized silicon carbide is studied. Postmortem transmission electron microscopy and X-ray photoelectron spectroscopy were used to document the change in the morphology and structure upon potential cycling of Pt/SiC catalysts. Two different potential cycle aging tests were used in order to accelerate the support corrosion, simulating start-up/shutdown and load cycling. On the basis of the results, we draw two main conclusions. First, platinized silicon carbide exhibits improved electrochemical stability over platinized active carbons. Second, silicon carbide undergoes at least mild oxidation if not even silicon leaching.

Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission

NASA Astrophysics Data System (ADS)

Fischer, M.; Sperlich, A.; Kraus, H.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

2018-05-01

We investigate the pump efficiency of silicon-vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.

Asymmetric Die Grows Purer Silicon Ribbon

NASA Technical Reports Server (NTRS)

Kalejs, J. P.; Chalmers, B.; Surek, T.

1983-01-01

Concentration of carbide impurities in silicon ribbon is reduced by growing crystalline ribbon with die one wall higher than other. Height difference controls shape of meniscus at liquid/crystal interface and concentrates silicon carbide impurity near one of broad faces. Opposite face is left with above-average purity. Significantly improves efficiency of solar cells made from ribbon.

Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks

NASA Astrophysics Data System (ADS)

Coleman, P. G.; Burrows, C. P.; Mahapatra, R.; Wright, N. G.

2007-07-01

Open-volume (vacancy-type) point defects have been observed in ˜80-nm-thick titanium dioxide films grown on silicon dioxide/4H silicon carbide substrates as stacks with high dielectric constant for power device applications, using variable-energy positron annihilation spectroscopy. The concentration of vacancies decreases as the titanium dioxide growth temperature is increased in the range from 700to1000°C, whereas grain boundaries form in the polycrystalline material at the highest growth temperatures. It is proposed that the optimal electrical performance for films grown at 800°C reflects a balance between decreasing vacancy concentration and increasing grain boundary formation. The concentration of vacancies at the silicon dioxide/silicon carbide interface appears to saturate after 2.5h oxidation at 1150°C. A supplementary result suggests that the quality of the 10-μm-thick deposited silicon carbide epilayer is compromised at depths of about 2μm and beyond, possibly by the migration of impurities and/or other defects from the standard-grade highly doped 4H silicon carbide wafer beneath the epilayer during oxidation.

Strengthening of oxidation resistant materials for gas turbine applications. [treatment of silicon ceramics for increased flexural strength and impact resistance

NASA Technical Reports Server (NTRS)

Kirchner, H. P.

1974-01-01

Silicon nitride and silicon carbide ceramics were treated to form compressive surface layers. On the silicon carbide, quenching and thermal exposure treatments were used, and on the silicon nitride, quenching, carburizing, and a combination of quenching and carburizing were used. In some cases substantial improvements in impact resistance and/or flexural strength were observed. The presence of compressive surface stresses was demonstrated by slotted rod tests.

Microstructures of BN/SiC coatings on nicalon fibers

NASA Technical Reports Server (NTRS)

Dickerson, R. M.; Singh, M.

1995-01-01

The microstructures of Nicalon silicon carbide (SiC) fibers and layered coatings of boron nitride (BN) followed by chemical vapor infiltrated silicon carbide (CVI-SiC) were characterized using optical and electron microscopy. Two different precursors and reactions were used to produce the BN layers while the deposition of CVI silicon carbide was nearly identical. Coated tows were examined in cross-section to characterize the chemistry and structures of the constituents and the interfaces. One BN precursor yielded three sublayers while the other gave a relatively homogeneous nanocrystalline layer.

Radiographic and ultrasonic characterization of sintered silicon carbide

NASA Technical Reports Server (NTRS)

Baaklini, G. Y.; Abel, P. B.

1988-01-01

The capabilities were investigated of projection microfocus X-radiography, ultrasonic velocity and attenuation, and reflection scanning acoustic microscopy for characterizing silicon carbide specimens. Silicon carbide batches covered a range of densities and different microstructural characteristics. Room temperature, four point flexural strength tests were conducted. Fractography was used to identify types, sizes, and locations of fracture origins. Fracture toughness values were calculated from fracture strength and flaw characterization data. Detection capabilities of radiography and acoustic microscopy for fracture-causing flaws were evaluated. Applicability of ultrasonics for verifying material strength and toughness was examined.

Flaw imaging and ultrasonic techniques for characterizing sintered silicon carbide

NASA Technical Reports Server (NTRS)

Baaklini, George Y.; Abel, Phillip B.

1987-01-01

The capabilities were investigated of projection microfocus x-radiography, ultrasonic velocity and attenuation, and reflection scanning acoustic microscopy for characterizing silicon carbide specimens. Silicon carbide batches covered a range of densities and different microstructural characteristics. Room temperature, four point flexural strength tests were conducted. Fractography was used to identify types, sizes, and locations of fracture origins. Fracture toughness values were calculated from fracture strength and flaw characterization data. Detection capabilities of radiography and acoustic microscopy for fracture-causing flaws were evaluated. Applicability of ultrasonics for verifying material strength and toughness was examined.

Linear integrated optics in 3C silicon carbide.

PubMed

Martini, Francesco; Politi, Alberto

2017-05-15

The development of new photonic materials that combine diverse optical capabilities is needed to boost the integration of different quantum and classical components within the same chip. Amongst all candidates, the superior optical properties of cubic silicon carbide (3C SiC) could be merged with its crystalline point defects, enabling single photon generation, manipulation and light-matter interaction on a single device. The development of photonics devices in SiC has been limited by the presence of the silicon substrate, over which thin crystalline films are heteroepitaxially grown. By employing a novel approach in the material fabrication, we demonstrate grating couplers with coupling efficiency reaching -6 dB, sub-µm waveguides and high intrinsic quality factor (up to 24,000) ring resonators. These components are the basis for linear optical networks and essential for developing a wide range of photonics component for non-linear and quantum optics.

An overview of silicon carbide device technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Matus, Lawrence G.

1992-01-01

Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.

Microstructure and Mechanical Properties of Reaction-Formed Silicon Carbide (RFSC) Ceramics

NASA Technical Reports Server (NTRS)

Singh, M.; Behrendt, D. R.

1994-01-01

The microstructure and mechanical properties of reaction-formed silicon carbide (RFSC) ceramics fabricated by silicon infiltration of porous carbon preforms are discussed. The morphological characterization of the carbon preforms indicates a very narrow pore size distribution. Measurements of the preform density by physical methods and by mercury porosimetry agree very well and indicate that virtually all of the porosity in the preforms is open to infiltrating liquids. The average room temperature flexural strength of the RFSC material with approximately 8 at.% free silicon is 369 +/- 28 MPa (53.5 +/- 4 ksi). The Weibull strength distribution data give a characteristic strength value of 381 MPa (55 ksi) and a Weibull modulus of 14.3. The residual silicon content is lower and the strengths are superior to those of most commercially available reaction-bonded silicon carbide materials.

NUCLEAR FUEL MATERIAL

DOEpatents

Goeddel, W.V.

1962-06-26

An improved method is given for making the carbides of nuclear fuel material. The metal of the fuel material, which may be a fissile and/or fertile material, is transformed into a silicide, after which the silicide is comminuted to the desired particle size. This silicide is then carburized at an elevated temperature, either above or below the melting point of the silicide, to produce an intimate mixture of the carbide of the fuel material and the carbide of silicon. This mixture of the fuel material carbide and the silicon carbide is relatively stable in the presence of moisture and does not exhibit the highly reactive surface condition which is observed with fuel material carbides made by most other known methods. (AEC)

Diamond-silicon carbide composite and method

DOEpatents

Zhao, Yusheng [Los Alamos, NM

2011-06-14

Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

Method of making carbon fiber-carbon matrix reinforced ceramic composites

NASA Technical Reports Server (NTRS)

Williams, Brian (Inventor); Benander, Robert (Inventor)

2007-01-01

A method of making a carbon fiber-carbon matrix reinforced ceramic composite wherein the result is a carbon fiber-carbon matrix reinforcement is embedded within a ceramic matrix. The ceramic matrix does not penetrate into the carbon fiber-carbon matrix reinforcement to any significant degree. The carbide matrix is a formed in situ solid carbide of at least one metal having a melting point above about 1850 degrees centigrade. At least when the composite is intended to operate between approximately 1500 and 2000 degrees centigrade for extended periods of time the solid carbide with the embedded reinforcement is formed first by reaction infiltration. Molten silicon is then diffused into the carbide. The molten silicon diffuses preferentially into the carbide matrix but not to any significant degree into the carbon-carbon reinforcement. Where the composite is intended to operate between approximately 2000 and 2700 degrees centigrade for extended periods of time such diffusion of molten silicon into the carbide is optional and generally preferred, but not essential.

Process for preparing fine grain silicon carbide powder

DOEpatents

Wei, G.C.

Method of producing fine-grain silicon carbide powder comprises combining methyltrimethoxysilane with a solution of phenolic resin, acetone and water or sugar and water, gelling the resulting mixture, and then drying and heating the obtained gel.

Silicon carbide thyristor

NASA Technical Reports Server (NTRS)

Edmond, John A. (Inventor); Palmour, John W. (Inventor)

1996-01-01

The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

Silicon Carbide Etching Using Chlorine Trifluoride Gas

NASA Astrophysics Data System (ADS)

Habuka, Hitoshi; Oda, Satoko; Fukai, Yasushi; Fukae, Katsuya; Takeuchi, Takashi; Aihara, Masahiko

2005-03-01

The etch rate, chemical reactions and etched surface of β-silicon carbide are studied in detail using chlorine trifluoride gas. The etch rate is greater than 10 μm min-1 at 723 K with a flow rate of 0.1 \\ell min-1 at atmospheric pressure in a horizontal reactor. The maximum etch rate at a substrate temperature of 773 K is 40 μm min-1 with a flow rate of 0.25 \\ell min-1. The step-like pattern that initially exists on the β-silicon carbide surface tends to be smoothed; the root-mean-square surface roughness decreases from its initial value of 5 μm to 1 μm within 15 min; this minimum value is maintained for more than 15 min. Therefore, chlorine trifluoride gas is considered to have a large etch rate for β-silicon carbide associated with making a rough surface smooth.

Varying potential silicon carbide gas sensor

NASA Technical Reports Server (NTRS)

Shields, Virgil B. (Inventor); Ryan, Margaret A. (Inventor); Williams, Roger M. (Inventor)

1997-01-01

A hydrocarbon gas detection device operates by dissociating or electro-chemically oxidizing hydrocarbons adsorbed to a silicon carbide detection layer. Dissociation or oxidation are driven by a varying potential applied to the detection layer. Different hydrocarbon species undergo reaction at different applied potentials so that the device is able to discriminate among various hydrocarbon species. The device can operate at temperatures between 100.degree. C. and at least 650.degree. C., allowing hydrocarbon detection in hot exhaust gases. The dissociation reaction is detected either as a change in a capacitor or, preferably, as a change of current flow through an FET which incorporates the silicon carbide detection layers. The silicon carbide detection layer can be augmented with a pad of catalytic material which provides a signal without an applied potential. Comparisons between the catalytically produced signal and the varying potential produced signal may further help identify the hydrocarbon present.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sajgalik, P.; Sedlacek, J.; Lences, Z.

Densification of silicon carbide without any sintering aids by hot-pressing and rapid hot pressing was investigated. Full density (>99% t.d.) has been reached at 1850 °C, a temperature of at least 150-200 °C lower compared to the up to now known solid state sintered silicon carbide powders. Silicon carbide was freeze granulated and heat treated prior the densification. Furthermore, evolution of microstructure, mechanical properties and creep behavior were evaluated and compared to reference ceramics from as received silicon carbide powder as well as those of commercial one. Novel method results in dense ceramics with Vickers hardness and indentation fracture toughnessmore » of 29.0 GPa and 5.25 MPam 1/2, respectively. Moreover, the creep rate of 3.8 x 10 –9 s –1 at 1450 °C and the load of 100 MPa is comparable to the commercial α-SiC solid state sintered at 2150 °C.« less

Penetration Resistance of Armor Ceramics: Dimensional Analysis and Property Correlations

DTIC Science & Technology

2015-08-01

been reported in experimental studies. Particular ceramics analyzed here are low- and high-purity alumina, aluminum nitride, boron carbide, silicon...analyzed here are low- and high-purity alumina, aluminum nitride, boron carbide, silicon carbide, and titanium diboride. Data for penetration depth...include high hardness, high elastic stiffness, high strengths (static/dynamic compressive, shear, and bending), and low density relative to armor steels

Conventional and Microwave Joining of Silicon Carbide Using Displacement Reactions

NASA Technical Reports Server (NTRS)

Kingsley, J.; Yiin, T.; Barmatz, M.

1995-01-01

Microwave heating was used to join Silicon Carbide rods using a thin TiC /Si tape interlayer . Microwaves quickly heated the rods and tape to temperatures where solid-state displacement reactions between TiC and Si occurred.

Light, Strong Insulating Tiles

NASA Technical Reports Server (NTRS)

Cordia, E.; Schirle, J.

1987-01-01

Improved lightweight insulating silica/aluminum borosilicate/silicon carbide tiles combine increased tensile strength with low thermal conductivity. Changes in composition substantially improve heat-insulating properties of silica-based refractory tile. Silicon carbide particles act as high-emissivity radiation scatterers in tile material.

Silicon Carbide Metallization

NASA Astrophysics Data System (ADS)

Lescoat, F.; Tanguy, F.; Durand, P.

2016-05-01

A study has been done to assess the feasibility of metallization of Silicon Carbide (SiC) in order to simplify design and mounting of one or more ground reference rail needed to provide an electrical reference for electronics mounted on an SiC structure.

Strontium and barium isotopes in presolar silicon carbide grains measured with CHILI-two types of X grains

NASA Astrophysics Data System (ADS)

Stephan, Thomas; Trappitsch, Reto; Davis, Andrew M.; Pellin, Michael J.; Rost, Detlef; Savina, Michael R.; Jadhav, Manavi; Kelly, Christopher H.; Gyngard, Frank; Hoppe, Peter; Dauphas, Nicolas

2018-01-01

We used CHILI, the Chicago Instrument for Laser Ionization, a new resonance ionization mass spectrometer developed for isotopic analysis of small samples, to analyze strontium, zirconium, and barium isotopes in 22 presolar silicon carbide grains. Twenty of the grains showed detectable strontium and barium, but none of the grains had enough zirconium to be detected with CHILI. Nine grains were excluded from further consideration since they showed very little signals (<1000 counts) for strontium as well as for barium. Among the 11 remaining grains, we found three X grains. The discovery of three supernova grains among only 22 grains was fortuitous, because only ∼1% of presolar silicon carbide grains are type X, but was confirmed by silicon isotopic measurements of grain residues with NanoSIMS. While one of the X grains showed strontium and barium isotope patterns expected for supernova grains, the two other supernova grains have 87Sr/86Sr < 0.5, values never observed in any natural sample before. From their silicon isotope ratios, the latter two grains can be classified as X2 grains, while the former grain belongs to the more common X1 group. The differences of these grains in strontium and barium isotopic composition constrain their individual formation conditions in Type II supernovae.

Development of silicon carbide semiconductor devices for high temperature applications

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony; Petit, Jeremy B.

1991-01-01

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Wear particles of single-crystal silicon carbide in vacuum

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1980-01-01

Sliding friction experiments, conducted in vacuum with silicon carbide /000/ surface in contact with iron based binary alloys are described. Multiangular and spherical wear particles of silicon carbide are observed as a result of multipass sliding. The multiangular particles are produced by primary and secondary cracking of cleavage planes /000/, /10(-1)0/, and /11(-2)0/ under the Hertzian stress field or local inelastic deformation zone. The spherical particles may be produced by two mechanisms: (1) a penny shaped fracture along the circular stress trajectories under the local inelastic deformation zone, and (2) attrition of wear particles.

Tribological Characteristics of Submicron SiC(p)-GR(p)/Zn-35Al-1Mg Composites in Semisolidification Casting process

NASA Astrophysics Data System (ADS)

Liu, S.; Fang, Z. W.; Li, L. X.

2018-05-01

Uniform SiC(p)-GR(p)/Zn-35Al-1Mg composites were prepared by powder pressing and semisolidification stirring-casting process by adding submicron silicon carbide and graphite reinforcement particles in an aluminum-zinc alloy matrix. Micro Vickers hardness and microstructures of the novel composites were studied, and their wear properties and wear temperature were measured for different load and friction conditions. The results show that silicon carbide and graphite particles homogeneously mix in the matrix, while contained silicon carbide particles improve the matrix hardness to 8.4%, graphite improves the matrix hardness to 16.8%, but two of them, combined, reduce the matrix hardness to 7.6%; the rate of temperature rise of the zinc-aluminum matrix alloy is the highest than the other three composites and is up to 48.5° C/s at 1.69MPa. At 0.56MPa and sliding 26.4km, the graphite composite anti-wear effect is optimal, while at 1.13MPa, the wear resistance of silicon carbide and graphite compound particles is the best; in the other case of only silicon carbide particles, the wear resistance is increased to 35% at 1.69MPa and 26.4km, and its anti-wear effects are excellent.

Tribological properties and surface chemistry of silicon carbide at temperatures to 1500 C

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1981-01-01

Silicon carbide surfaces were heated to 1500 C in a vacuum and analyzed at room temperature with X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The basic unit of the surfaces was considered as a plane of a tetrahedron of either SiC4 and CSi4 composition. AES spectra were obtained from 250-1500 C, with an analysis depth of 1 nm revealed the presence of little Si and mostly graphite. XPS analysis depth was 2 nm or less, and Si was found in the second 1 nm. Sliding friction tests with single-crystal silicon carbide in contact with iron in a vacuum were characterized by a stock-slip value. The coefficient of friction increased with increasing temperature up to 400 C, then decreased with increasing temperature from 400-600 C. Reheating surfaces to 800 C after preheating them to that temperature produced no changes in AES readings. It is concluded that the maximum density of silicon and silicon-carbide is at 800 C, and the higher the sliding temperature, the more metal that is transferred.

Laser-induced phase separation of silicon carbide

PubMed Central

Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

2016-01-01

Understanding the phase separation mechanism of solid-state binary compounds induced by laser–material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system. PMID:27901015

Young Investigator Program: Tribology of Nanostructured Silicon Carbide for MEMS and NEMS Applications in Extreme Environments

DTIC Science & Technology

2011-02-01

was calculated as the difference between the lowest point of the rigid indenter and the initial position of the sample’s free surface. The total...SiC A high pressure structural phase transformation (HPPT) was previously reported for silicon, gallium arsenide, and silicon nitride and indirect...molecular dynamics (MD) simulations with thermodynamic analysis to settle this debate whether silicon carbide (SiC) can undergo a high pressure phase

Protective coating for alumina-silicon carbide whisker composites

DOEpatents

Tiegs, Terry N.

1989-01-01

Ceramic composites formed of an alumina matrix reinforced with silicon carbide whiskers homogenously dispersed therein are provided with a protective coating for preventing fracture strength degradation of the composite by oxidation during exposure to high temperatures in oxygen-containing atmospheres. The coating prevents oxidation of the silicon carbide whiskers within the matrix by sealing off the exterior of the matrix so as to prevent oxygen transport into the interior of the matrix. The coating is formed of mullite or mullite plus silicon oxide and alumina and is formed in place by heating the composite in air to a temperature greater than 1200.degree. C. This coating is less than about 100 microns thick and adequately protects the underlying composite from fracture strength degradation due to oxidation.

Method of deposition of silicon carbide layers on substrates

DOEpatents

Angelini, P.; DeVore, C.E.; Lackey, W.J.; Blanco, R.E.; Stinton, D.P.

1982-03-19

A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at 800 to 1050/sup 0/C when the substrates have been confined within a suitable coating environment.

Performance of biomorphic Silicon Carbide as particulate filter in diesel boilers.

PubMed

Orihuela, M Pilar; Gómez-Martín, Aurora; Becerra, José A; Chacartegui, Ricardo; Ramírez-Rico, Joaquín

2017-12-01

Biomorphic Silicon Carbide (bioSiC) is a novel porous ceramic material with excellent mechanical and thermal properties. Previous studies have demonstrated that it may be a good candidate for its use as particle filter media of exhaust gases at medium or high temperature. In order to determine the filtration efficiency of biomorphic Silicon Carbide, and its adequacy as substrate for diesel particulate filters, different bioSiC-samples have been tested in the flue gases of a diesel boiler. For this purpose, an experimental facility to extract a fraction of the boiler exhaust flow and filter it under controlled conditions has been designed and built. Several filter samples with different microstructures, obtained from different precursors, have been tested in this bench. The experimental campaign was focused on the measurement of the number and size of particles before and after placing the samples. Results show that the initial efficiency of filters made from natural precursors is severely determined by the cutting direction and associated microstructure. In biomorphic Silicon Carbide derived from radially cut wood, the initial efficiency of the filter is higher than 95%. Nevertheless, when the cut of the wood is axial, the efficiency depends on the pore size and the permeability, reaching in some cases values in the range 70-90%. In this case, the presence of macropores in some of the samples reduces their efficiency as particle traps. In continuous operation, the accumulation of particles within the porous media leads to the formation of a soot cake, which improves the efficiency except in the case when extra-large pores exist. For all the samples, after a few operation cycles, capture efficiency was higher than 95%. These experimental results show the potential for developing filters for diesel boilers based on biomorphic Silicon Carbide. Copyright © 2017 Elsevier Ltd. All rights reserved.

High-Bandgap Silicon Nanocrystal Solar Cells: Device Fabrication, Characterization, and Modeling

NASA Astrophysics Data System (ADS)

Löper, Philipp; Canino, Mariaconcetta; Schnabel, Manuel; Summonte, Caterina; Janz, Stefan; Zacharias, Margit

Silicon nanocrystals (Si NCs) embedded in Si-based dielectrics provide a Si-based high-bandgap material (1.7 eV) and enable the construction of crystalline Si tandem solar cells. This chapter focusses on Si NC embedded in silicon carbide, because silicon carbide offers electrical conduction through the matrix material. The material development is reviewed, and optical modeling is introduced as a powerful method to monitor the four material components, amorphous and crystalline silicon as well as amorphous and crystalline silicon carbide. In the second part of this chapter, recent device developments for the photovoltaic characterization of Si NCs are examined. The controlled growth of Si NCs involves high-temperature annealing which deteriorates the properties of any previously established selective contacts. A membrane-based device is presented to overcome these limitations. In this approach, the formation of both selective contacts is carried out after high-temperature annealing and is therefore not affected by the latter. We examine p-i-n solar cells with an intrinsic region made of Si NCs embedded in silicon carbide. Device failure due to damaged insulation layers is analyzed by light beam-induced current measurements. An optical model of the device is presented for improving the cell current. A characterization scheme for Si NC p-i-n solar cells is presented which aims at determining the fundamental transport and recombination properties, i.e., the effective mobility lifetime product, of the nanocrystal layer at device level. For this means, an illumination-dependent analysis of Si NC p-i-n solar cells is carried out within the framework of the constant field approximation. The analysis builds on an optical device model, which is used to assess the photogenerated current in each of the device layers. Illumination-dependent current-voltage curves are modelled with a voltage-dependent current collection function with only two free parameters, and excellent agreement is found between theory and experiment. An effective mobility lifetime product of 10-10 cm2/V is derived and confirmed independently from an alternative method. The procedure discussed in this chapter is proposed as a characterization scheme for further material development, providing an optimization parameter (the effective mobility lifetime product) relevant for the photovoltaic performance of Si NC films.

Barrier properties of nano silicon carbide designed chitosan nanocomposites.

PubMed

Pradhan, Gopal C; Dash, Satyabrata; Swain, Sarat K

2015-12-10

Nano silicon carbide (SiC) designed chitosan nanocomposites were prepared by solution technique. Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) were used for studying structural interaction of nano silicon carbide (SiC) with chitosan. The morphology of chitosan/SiC nanocomposites was investigated by field emission scanning electron microscope (FESEM), and high resolution transmission electron microscope (HRTEM). The thermal stability of chitosan was substantially increased due to incorporation of stable silicon carbide nanopowder. The oxygen permeability of chitosan/SiC nanocomposites was reduced by three folds as compared to the virgin chitosan. The chemical resistance properties of chitosan were enhanced due to the incorporation of nano SiC. The biodegradability was investigated using sludge water. The tensile strength of chitosan/SiC nanocomposites was increased with increasing percentage of SiC. The substantial reduction in oxygen barrier properties in combination with increased thermal stability, tensile strength and chemical resistance properties; the synthesized nanocomposite may be suitable for packaging applications. Copyright © 2015 Elsevier Ltd. All rights reserved.

Process for making silicon carbide reinforced silicon carbide composite

NASA Technical Reports Server (NTRS)

Lau, Sai-Kwing (Inventor); Calandra, Salavatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

1998-01-01

A process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

Method for removing oxide contamination from silicon carbide powders

DOEpatents

Brynestad, J.; Bamberger, C.E.

1984-08-01

The described invention is directed to a method for removing oxide contamination in the form of oxygen-containing compounds such as SiO/sub 2/ and B/sub 2/O/sub 3/ from a charge of finely divided silicon carbide. The silicon carbide charge is contacted with a stream of hydrogen fluoride mixed with an inert gas carrier such as argon at a temperature in the range of about 200/sup 0/ to 650/sup 0/C. The oxides in the charge react with the heated hydrogen fluoride to form volatile gaseous fluorides such as SiF/sub 4/ and BF/sub 3/ which pass through the charge along with unreacted hydrogen fluoride and the carrier gas. Any residual gaseous reaction products and hydrogen fluoride remaining in the charge are removed by contacting the charge with the stream of inert gas which also cools the powder to room temperature. The removal of the oxygen contamination by practicing the present method provides silicon carbide powders with desirable pressing and sintering characteristics. 1 tab.

Silicon carbide nanomaterial as a coating for solid-phase microextraction.

PubMed

Tian, Yu; Feng, Juanjuan; Wang, Xiuqin; Sun, Min; Luo, Chuannan

2018-01-26

Silicon carbide has excellent properties, such as corrosion resistance, high strength, oxidation resistance, high temperature, and so on. Based on these properties, silicon carbide was coated on stainless-steel wire and used as a solid-phase microextraction coating, and polycyclic aromatic hydrocarbons were employed as model analytes. Using gas chromatography, some important factors that affect the extraction efficiency were optimized one by one, and an analytical method was established. The analytical method showed wide linear ranges (0.1-30, 0.03-30, and 0.01-30 μg/L) with satisfactory correlation coefficients (0.9922-0.9966) and low detection limits (0.003-0.03 μg/L). To investigate the practical application of the method, rainwater and cigarette ash aqueous solution were collected as real samples for extraction and detection. The results indicate that silicon carbide has excellent application in the field of solid-phase microextraction. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon carbide reinforced silicon carbide composite

NASA Technical Reports Server (NTRS)

Lau, Sai-Kwing (Inventor); Calandra, Salvatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

2001-01-01

This invention relates to a process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

Electrosprayed Heavy Ion and Nanodrop Beams for Surface Engineering and Electrical Propulsion

DTIC Science & Technology

2014-09-10

arsenide, gallium antimonide, gallium nitride and silicon carbide ; studied the role of the liquid’s composition on the sputtering of silicon ; study...being a material closely related to silicon . The maximum roughness for GaN, GaAs, GaSb, InP, InAs, Ge and SiC are 12.7, 11.7, 19.5, 8.1, 7.9, 17.5...poly crystalline silicon carbide and boron car- bide, respectively. The associated sputtering rates of 448, 172, and 170 nm/min far exceed the

The Impact of GaN/Substrate Thermal Boundary Resistance on a HEMT Device

DTIC Science & Technology

2011-11-01

stack between the GaN and Substrate layers. The University of Bristol recently reported that this TBR in commercial devices on Silicon Carbide ( SiC ...Circuit RF Radio Frequency PA Power Amplifier SiC Silicon Carbide FEA Finite Element Analysis heff Effective Heat transfer Coefficient (W/m 2 K...substrate material switched from sapphire to silicon , and by another factor of two from silicon to SiC . TABLE 1: SAMPLE RESULTS FROM DOUGLAS ET AL. FOR

Corrosion Characteristics of Silicon Carbide and Silicon Nitride

PubMed Central

Munro, R. G.; Dapkunas, S. J.

1993-01-01

The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000 °C or higher. The environments include dry and moist oxygen, mixtures of hot gaseous vapors, molten salts, molten metals, and complex environments pertaining to coal ashes and slags. PMID:28053489

Powerful, Efficient Electric Vehicle Chargers: Low-Cost, Highly-Integrated Silicon Carbide (SiC) Multichip Power Modules (MCPMs) for Plug-In Hybrid Electric

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-09-14

ADEPT Project: Currently, charging the battery of an electric vehicle (EV) is a time-consuming process because chargers can only draw about as much power from the grid as a hair dryer. APEI is developing an EV charger that can draw as much power as a clothes dryer, which would drastically speed up charging time. APEI's charger uses silicon carbide (SiC)-based power transistors. These transistors control the electrical energy flowing through the charger's circuits more effectively and efficiently than traditional transistors made of straight silicon. The SiC-based transistors also require less cooling, enabling APEI to create EV chargers that are 10more » times smaller than existing chargers.« less

Observations on infiltration of silicon carbide compacts with an aluminium alloy

NASA Technical Reports Server (NTRS)

Asthana, R.; Rohatgi, P. K.

1992-01-01

The melt infiltration of ceramic particulates permits an opportunity to observe such fundamental materials phenomena as nucleation, dynamic wetting and growth in constrained environments. Experimental observations are presented on the infiltration behavior and matrix microstructures that form when porous compacts of platelet-shaped single crystals of alpha- (hexagonal) silicon carbide are infiltrated with a liquid 2014 Al alloy. The infiltration process involved counter gravity infiltration of suitably tamped and preheated compacts of silicon carbide platelets under an external pressure in a special pressure chamber for a set period, then by solidification of the infiltrant metal in the interstices of the bed at atmospheric pressure.

Liquid phase sintering of silicon carbide

DOEpatents

Cutler, R.A.; Virkar, A.V.; Hurford, A.C.

1989-05-09

Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1,600 C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase. 4 figs.

Liquid phase sintering of silicon carbide

DOEpatents

Cutler, Raymond A.; Virkar, Anil V.; Hurford, Andrew C.

1989-01-01

Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1600.degree. C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase.

Stability and electrokinetic potential of silicon carbide suspensions in aqueous organic media

NASA Technical Reports Server (NTRS)

Yeremenko, B. V.; Lyubchenko, I. N.; Skobets, I. Y.

1984-01-01

The method of electroosmosis was used to study the dependence of the electrokinetic potential of silicon carbide suspensions in mixtures of water -n. alcohol. The reasons for the dependence of the electrokinetic potential on the composition of the intermicellar liquid are discussed.

Method of deposition of silicon carbide layers on substrates and product

DOEpatents

Angelini, Peter; DeVore, Charles E.; Lackey, Walter J.; Blanco, Raymond E.; Stinton, David P.

1984-01-01

A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at about 800.degree. C. to 1050.degree. C. when the substrates have been confined within a suitable coating environment.

Life Modeling and Design Analysis for Ceramic Matrix Composite Materials

NASA Technical Reports Server (NTRS)

2005-01-01

The primary research efforts focused on characterizing and modeling static failure, environmental durability, and creep-rupture behavior of two classes of ceramic matrix composites (CMC), silicon carbide fibers in a silicon carbide matrix (SiC/SiC) and carbon fibers in a silicon carbide matrix (C/SiC). An engineering life prediction model (Probabilistic Residual Strength model) has been developed specifically for CMCs. The model uses residual strength as the damage metric for evaluating remaining life and is posed probabilistically in order to account for the stochastic nature of the material s response. In support of the modeling effort, extensive testing of C/SiC in partial pressures of oxygen has been performed. This includes creep testing, tensile testing, half life and residual tensile strength testing. C/SiC is proposed for airframe and propulsion applications in advanced reusable launch vehicles. Figures 1 and 2 illustrate the models predictive capabilities as well as the manner in which experimental tests are being selected in such a manner as to ensure sufficient data is available to aid in model validation.

A Model for the Oxidation of Carbon Silicon Carbide Composite Structures

NASA Technical Reports Server (NTRS)

Sullivan, Roy M.

2004-01-01

A mathematical theory and an accompanying numerical scheme have been developed for predicting the oxidation behavior of carbon silicon carbide (C/SiC) composite structures. The theory is derived from the mechanics of the flow of ideal gases through a porous solid. The result of the theoretical formulation is a set of two coupled nonlinear differential equations written in terms of the oxidant and oxide partial pressures. The differential equations are solved simultaneously to obtain the partial vapor pressures of the oxidant and oxides as a function of the spatial location and time. The local rate of carbon oxidation is determined using the map of the local oxidant partial vapor pressure along with the Arrhenius rate equation. The nonlinear differential equations are cast into matrix equations by applying the Bubnov-Galerkin weighted residual method, allowing for the solution of the differential equations numerically. The numerical method is demonstrated by utilizing the method to model the carbon oxidation and weight loss behavior of C/SiC specimens during thermogravimetric experiments. The numerical method is used to study the physics of carbon oxidation in carbon silicon carbide composites.

Hydrogen adsorption in metal-decorated silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Singh, Ram Sevak; Solanki, Ankit

2016-09-01

Hydrogen storage for fuel cell is an active area of research and appropriate materials with excellent hydrogen adsorption properties are highly demanded. Nanotubes, having high surface to volume ratio, are promising storage materials for hydrogen. Recently, silicon carbide nanotubes have been predicted as potential materials for future hydrogen storage application, and studies in this area are ongoing. Here, we report a systematic study on hydrogen adsorption properties in metal (Pt, Ni and Al) decorated silicon carbide nanotubes (SiCNTs) using first principles calculations based on density functional theory. The hydrogen adsorption properties are investigated by calculations of adsorption energy, electronic band structure, density of states (DOS) and Mulliken charge population analysis. Our findings show that hydrogen adsorptions on Pt, Ni and Al-decorated SiCNTs undergo spontaneous exothermic reactions with significant modulation of electronic structure of SiCNTs in all cases. Importantly, according to the Mulliken charge population analysis, dipole-dipole interaction causes chemisorptions of hydrogen in Pt, Ni and Al decorated SiCNTs with formation of chemical bonds. The study is a platform for the development of metal decorated SiCNTs for hydrogen adsorption or hydrogen storage application.

Dynamic Behavior and Optimization of Advanced Armor Ceramics: January-December 2012 Annual Report

DTIC Science & Technology

2015-03-01

tasks are reviewed: Nanostructured Armor Ceramics: Focus on Boron Carbide; The Role of Microstructure in the Impact Resistance for Silicon Carbide...Task 2: The Role of Microstructure in the Impact Resistance for Silicon Carbide (SiC), Core Program 22 3.1 Long-Range Goals 22 3.2 Background 22 3.3...from a 2-gr drop test using corn starch as a C source; D(0.9) = 1.27 μm ....................................................................12 Fig

Strontium and barium isotopes in presolar silicon carbide grains measured with CHILI—two types of X grains

DOE PAGES

Stephan, Thomas; Trappitsch, Reto; Davis, Andrew M.; ...

2017-05-10

Here, we used CHILI, the Chicago Instrument for Laser Ionization, a new resonance ionization mass spectrometer developed for isotopic analysis of small samples, to analyze strontium, zirconium, and barium isotopes in 22 presolar silicon carbide grains. Twenty of the grains showed detectable strontium and barium, but none of the grains had enough zirconium to be detected with CHILI. Nine grains were excluded from further consideration since they showed very little signals (<1000 counts) for strontium as well as for barium. Among the 11 remaining grains, we found three X grains. The discovery of three supernova grains among only 22 grainsmore » was fortuitous, because only ~1% of presolar silicon carbide grains are type X, but was confirmed by silicon isotopic measurements of grain residues with NanoSIMS. And while one of the X grains showed strontium and barium isotope patterns expected for supernova grains, the two other supernova grains have 87Sr/86Sr < 0.5, values never observed in any natural sample before. From their silicon isotope ratios, the latter two grains can be classified as X2 grains, while the former grain belongs to the more common X1 group. The differences of these grains in strontium and barium isotopic composition constrain their individual formation conditions in Type II supernovae.« less

Strontium and barium isotopes in presolar silicon carbide grains measured with CHILI—two types of X grains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stephan, Thomas; Trappitsch, Reto; Davis, Andrew M.

Here, we used CHILI, the Chicago Instrument for Laser Ionization, a new resonance ionization mass spectrometer developed for isotopic analysis of small samples, to analyze strontium, zirconium, and barium isotopes in 22 presolar silicon carbide grains. Twenty of the grains showed detectable strontium and barium, but none of the grains had enough zirconium to be detected with CHILI. Nine grains were excluded from further consideration since they showed very little signals (<1000 counts) for strontium as well as for barium. Among the 11 remaining grains, we found three X grains. The discovery of three supernova grains among only 22 grainsmore » was fortuitous, because only ~1% of presolar silicon carbide grains are type X, but was confirmed by silicon isotopic measurements of grain residues with NanoSIMS. And while one of the X grains showed strontium and barium isotope patterns expected for supernova grains, the two other supernova grains have 87Sr/86Sr < 0.5, values never observed in any natural sample before. From their silicon isotope ratios, the latter two grains can be classified as X2 grains, while the former grain belongs to the more common X1 group. The differences of these grains in strontium and barium isotopic composition constrain their individual formation conditions in Type II supernovae.« less

All-solid-state supercapacitors on silicon using graphene from silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitancemore » behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.« less

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

PubMed Central

de Heer, Walt A.; Berger, Claire; Ruan, Ming; Sprinkle, Mike; Li, Xuebin; Hu, Yike; Zhang, Baiqian; Hankinson, John; Conrad, Edward

2011-01-01

After the pioneering investigations into graphene-based electronics at Georgia Tech, great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an important material for fundamental two-dimensional electron gas physics. It was long known that graphene mono and multilayers grow on SiC crystals at high temperatures in ultrahigh vacuum. At these temperatures, silicon sublimes from the surface and the carbon rich surface layer transforms to graphene. However the quality of the graphene produced in ultrahigh vacuum is poor due to the high sublimation rates at relatively low temperatures. The Georgia Tech team developed growth methods involving encapsulating the SiC crystals in graphite enclosures, thereby sequestering the evaporated silicon and bringing growth process closer to equilibrium. In this confinement controlled sublimation (CCS) process, very high-quality graphene is grown on both polar faces of the SiC crystals. Since 2003, over 50 publications used CCS grown graphene, where it is known as the “furnace grown” graphene. Graphene multilayers grown on the carbon-terminated face of SiC, using the CCS method, were shown to consist of decoupled high mobility graphene layers. The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-patterned graphene structures thereby demonstrating that EG is a viable contender for next-generation electronics. Here we present for the first time the CCS method that outperforms other epitaxial graphene production methods. PMID:21960446

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Composition Comprising Silicon Carbide

NASA Technical Reports Server (NTRS)

Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

2012-01-01

A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

SIC mirrors polishing

NASA Astrophysics Data System (ADS)

Rodolfo, J.; Ruch, E.; Tarreau, M.; Merceron, J.-M.; Ferré, J.; Rousselet, N.; Leplan, H.; Geyl, R.; Harnisch, B.

2017-11-01

Silicon Carbide is a material of high interest in the design and manufacturing of space telescopes, thanks to its mechanical and thermal properties. Since many years, Reosc has gathered a large experience in the polishing, testing, integration and coating of large size Silicon Carbide mirrors as well as in the integration of full SiC TMAs.

Flexural plate wave devices fabricated from silicon carbide membrane

NASA Astrophysics Data System (ADS)

Diagne, Ndeye Fama

Flexural Plate Wave (FPW) devices fabricated from Silicon Carbide (SiC) membranes are presented here which exhibit electrical and mechanical characteristics in its transfer functions that makes it very useful as a low voltage probe device capable of functioning in small areas that are commonly inaccessible to ordinary devices. The low input impedance characteristic of this current driven device makes it possible for it to operate at very low voltages, thereby reducing the hazards for flammable or explosive areas to be probed. The Flexural Plate Wave (FPW) devices are of a family of gravimetric type sensors that permit direct measurements of the mass of the vibrating element. The primary objective was to study the suitability of Silicon Carbide (SiC) membranes as a replacement of Silicon Nitride (SiN) membrane in flexural plate wave devices developed by Sandia National Laboratories. Fabrication of the Flexural Plate Wave devices involves the overlaying a silicon wafer with membranes of 3C-SiC thin film upon which conducting meander lines are placed. The input excitation energy is in the form of an input current. The lines of current along the direction of the conducting Meander Lines Transducer (MLTs) and the applied perpendicular external magnetic field set up a mechanical wave perpendicular to both, exciting the membrane by means of a Lorentz force, which in turn sets up flexural waves that propagate along the thin membrane. The physical dimensions, the mass density, the tension in the membrane and the meander spacing are physical characteristics that determine resonance frequency of the Flexural Plate Wave (FPW) device. Of primary interest is the determination of the resonant frequency of the silicon carbide membrane as functions of the device physical characteristic parameters. The appropriate transduction scheme with Meander Line Transducers (IDTs) are used to excite the membrane. Equivalent circuit models characterizing the reflection response S11 (amplitude and phase) for a one-port Flexural PlateWave device and the transmission response S21 of a two-port device are used for the development of the equivalent mechanical characteristics.

Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

DTIC Science & Technology

2015-11-13

at the monolayer MoS2 edges. KEYWORDS: transition metal dichalcogenide, silicon carbide , scanning tunneling microscopy, synchrotron X-ray scattering... silicon from SiC not only offers uniform large-area synthesis of graphene but also provides technological advantages over alternative methods such as...Röhrl, J.; et al. Towards Wafer-Size Graphene Layers by Atmospheric Pressure Graphitization of Silicon Carbide . Nat. Mater. 2009, 8, 203−207. (18) Çelebi

Phase formation during the carbothermic reduction of eudialyte concentrate

NASA Astrophysics Data System (ADS)

Krasikov, S. A.; Upolovnikova, A. G.; Sitnikova, O. A.; Ponomarenko, A. A.; Agafonov, S. N.; Zhidovinova, S. V.; Maiorov, D. V.

2013-07-01

The phase transformations of eudialyte concentrate during the carbothermic reduction in the temperature range 25-2000°C are studied by thermodynamic simulation, differential thermal analysis, and X-ray diffraction. As the temperature increases to 1500°C, the following phases are found to form sequentially: iron and manganese carbides, free iron, niobium carbide, iron silicides, silicon and titanium carbides, and free silicon. Strontium, yttrium, and uranium in the temperature range under study are not reduced and are retained in an oxide form, and insignificant reduction of zirconium oxides with the formation of carbide ZrC is possible only at temperatures above 1500°C.

Resin infiltration transfer technique

DOEpatents

Miller, David V [Pittsburgh, PA; Baranwal, Rita [Glenshaw, PA

2009-12-08

A process has been developed for fabricating composite structures using either reaction forming or polymer infiltration and pyrolysis techniques to densify the composite matrix. The matrix and reinforcement materials of choice can include, but are not limited to, silicon carbide (SiC) and zirconium carbide (ZrC). The novel process can be used to fabricate complex, net-shape or near-net shape, high-quality ceramic composites with a crack-free matrix.

Amorphous silicon carbide coatings for extreme ultraviolet optics

NASA Technical Reports Server (NTRS)

Kortright, J. B.; Windt, David L.

1988-01-01

Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

Designed porosity materials in nuclear reactor components

DOEpatents

Yacout, A. M.; Pellin, Michael J.; Stan, Marius

2016-09-06

A nuclear fuel pellet with a porous substrate, such as a carbon or tungsten aerogel, on which at least one layer of a fuel containing material is deposited via atomic layer deposition, and wherein the layer deposition is controlled to prevent agglomeration of defects. Further, a method of fabricating a nuclear fuel pellet, wherein the method features the steps of selecting a porous substrate, depositing at least one layer of a fuel containing material, and terminating the deposition when the desired porosity is achieved. Also provided is a nuclear reactor fuel cladding made of a porous substrate, such as silicon carbide aerogel or silicon carbide cloth, upon which layers of silicon carbide are deposited.

Investigation of magnetism in aluminum-doped silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Behzad, Somayeh; Chegel, Raad

2013-11-01

The effect of aluminum doping on the structural, electronic and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) is investigated using spin-polarized density functional theory. It is found from the calculation of the formation energies that aluminum substitution for silicon atom is preferred. Our results show that the magnetization depends on the substitutional site, aluminum substitution at silicon site does not introduce any spin-polarization, whereas the aluminum substitution for carbon atom yields a spin polarized, almost dispersionless π band within the original band gap.

METHOD OF MAKING REFRACTORY BODIES

DOEpatents

Andersen, J.C.

1960-05-31

A method is given for the manufacture of silicon carbide bodies that are characterized by high density, high purity, and superior resistance to oxidative deterioration. Dense silicon bodies are obtained by a process in which granular silicon carbide, a carbonizable material, and a carbonaceous material are mixed together, the mixture is shaped as desired, and then the shape is fired in the presence of more than the stoichiometric amount of silicon. The carbonizable material preferably includes a temporary binder that is set before the firing step to hold the mix in shape for firing.

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

NASA Astrophysics Data System (ADS)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Diffusion Bonding of Silicon Carbide Ceramics using Titanium Interlayers

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay; Shpargel, Tarah P.; Kiser, James D.

2006-01-01

Robust joining approaches for silicon carbide ceramics are critically needed to fabricate leak free joints with high temperature mechanical capability. In this study, titanium foils and physical vapor deposited (PVD) titanium coatings were used to form diffusion bonds between SiC ceramics using hot pressing. Silicon carbide substrate materials used for bonding include sintered SiC and two types of CVD SiC. Microscopy results show the formation of well adhered diffusion bonds. The bond strengths as determined from pull tests are on the order of several ksi, which is much higher than required for a proposed application. Microprobe results show the distribution of silicon, carbon, titanium, and other minor elements across the diffusion bond. Compositions of several phases formed in the joint region were identified. Potential issues of material compatibility and optimal bond formation will also be discussed.

Silicon crystal growth in vacuum

NASA Technical Reports Server (NTRS)

Khattak, C. P.; Schmid, F.

1982-01-01

The most developed process for silicon crystal growth is the Czochralski (CZ) method which was in production for over two decades. In an effort to reduce cost of single crystal silicon for photovoltaic applications, a directional solidification technique, Heat Exchanger Method (HEM), was adapted. Materials used in HEM and CZ furnaces are quite similar (heaters, crucibles, insulation, etc.). To eliminate the cost of high purity argon, it was intended to use vacuum operation in HEM. Two of the major problems encountered in vacuum processing of silicon are crucible decomposition and silicon carbide formation in the melt.

Joining and Integration of Silicon Carbide for Turbine Engine Applications

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay; Coddington, Bryan; Asthana, Rajiv

2010-01-01

The critical need for ceramic joining and integration technologies is becoming better appreciated as the maturity level increases for turbine engine components fabricated from ceramic and ceramic matrix composite materials. Ceramic components offer higher operating temperatures and reduced cooling requirements. This translates into higher efficiencies and lower emissions. For fabricating complex shapes, diffusion bonding of silicon carbide (SiC) to SiC is being developed. For the integration of ceramic parts to the surrounding metallic engine system, brazing of SiC to metals is being developed. Overcoming the chemical, thermal, and mechanical incompatibilities between dissimilar materials is very challenging. This presentation will discuss the types of ceramic components being developed by researchers and industry and the benefits of using ceramic components. Also, the development of strong, crack-free, stable bonds will be discussed. The challenges and progress in developing joining and integration approaches for a specific application, i.e. a SiC injector, will be presented.

40 CFR 98.282 - GHGs to report.

Code of Federal Regulations, 2011 CFR

2011-07-01

... GREENHOUSE GAS REPORTING Silicon Carbide Production § 98.282 GHGs to report. You must report: (a) CO2 and CH4 process emissions from all silicon carbide process units or furnaces combined. (b) CO2, CH4, and N2O... (General Stationary Fuel Combustion Sources) by following the requirements of subpart C. ...

40 CFR 98.282 - GHGs to report.

Code of Federal Regulations, 2013 CFR

2013-07-01

... GREENHOUSE GAS REPORTING Silicon Carbide Production § 98.282 GHGs to report. You must report: (a) CO2 and CH4 process emissions from all silicon carbide process units or furnaces combined. (b) CO2, CH4, and N2O... (General Stationary Fuel Combustion Sources) by following the requirements of subpart C. ...

40 CFR 98.282 - GHGs to report.

Code of Federal Regulations, 2010 CFR

2010-07-01

... GREENHOUSE GAS REPORTING Silicon Carbide Production § 98.282 GHGs to report. You must report: (a) CO2 and CH4 process emissions from all silicon carbide process units or furnaces combined. (b) CO2, CH4, and N2O... (General Stationary Fuel Combustion Sources) by following the requirements of subpart C. ...

40 CFR 98.282 - GHGs to report.

Code of Federal Regulations, 2012 CFR

2012-07-01

... GREENHOUSE GAS REPORTING Silicon Carbide Production § 98.282 GHGs to report. You must report: (a) CO2 and CH4 process emissions from all silicon carbide process units or furnaces combined. (b) CO2, CH4, and N2O... (General Stationary Fuel Combustion Sources) by following the requirements of subpart C. ...

Abrasive wear behavior of heat-treated ABC-silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xiao Feng; Lee, Gun Y.; Chen, Da

2002-06-17

Hot-pressed silicon carbide, containing aluminum, boron, and carbon additives (ABC-SiC), was subjected to three-body and two-body wear testing using diamond abrasives over a range of sizes. In general, the wear resistance of ABC-SiC, with suitable heat treatment, was superior to that of commercial SiC.

Drilling Holes in Graphite/Epoxy Composites

NASA Technical Reports Server (NTRS)

Daniels, J. G.; Ledbetter, Frank E., III; Penn, B. G.; White, W. L.

1986-01-01

Slurry of silicon carbide powder in water fed onto bit while drilling. Slurry contains about 60 percent silicon carbide by weight. Slurry recirculated by low-power pump. With slurry, dull tools cut as fast as, or faster than, sharp ones. Holes drilled rapidly and efficiently regardless of ply orientation; whether unidirectional, quasi-isotropic symmetrical, or cross-ply.

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

DOE PAGES

Wang, Fei; Zhang, Zheyu

2016-12-28

This article overviews the silicon carbide (SiC) technology. The focus is on the benefits of SiC based power electronics for converters and systems, as well as their ability in enabling new applications. The challenges and research trends on the design and application of SiC power electronics are also discussed.

Nuclear breeder reactor fuel element with silicon carbide getter

DOEpatents

Christiansen, David W.; Karnesky, Richard A.

1987-01-01

An improved cesium getter 28 is provided in a breeder reactor fuel element or pin in the form of an extended surface area, low density element formed in one embodiment as a helically wound foil 30 located with silicon carbide, and located at the upper end of the fertile material upper blanket 20.

Sintered silicon carbide molded body and method for its production

NASA Technical Reports Server (NTRS)

Omori, M.; Sendai, M.; Ohira, K.

1984-01-01

Sintered silicon carbide shapes are described. They are produced by using a composition containing an oxide of at least one element chosen from the group: Li, Be, Mg, Si, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Nb, Mo, Ba, Tc, Ta, W and Th as a supplement to known sintering aids.

Silicon carbide/calcium aluminosilicate: A notch-insensitive ceramic-matrix composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cady, C.M.; Mackin, T.J.; Evans, A.G.

Tension experiments performed on a 0/90 laminated silicon carbide/calcium aluminosilicate composite at room temperature establish that this material is notch insensitive. Multiple matrix cracking is determined to be the stress redistribution mechanism. This mechanism is found to provide a particularly efficient means for creating local inelastic strains, which eliminate stress concentrations.

Visible-blind ultraviolet photodetectors on porous silicon carbide substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naderi, N.; Hashim, M.R., E-mail: roslan@usm.my

2013-06-01

Highlights: • Highly reliable UV detectors are fabricated on porous silicon carbide substrates. • The optical properties of samples are enhanced by increasing the current density. • The optimized sample exhibits enhanced sensitivity to the incident UV radiation. - Abstract: Highly reliable visible-blind ultraviolet (UV) photodetectors were successfully fabricated on porous silicon carbide (PSC) substrates. High responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photodetector that was fabricated on an optimized PSC substrate. The PSC samples were prepared via the UV-assisted photo-electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using different etching current densities. Themore » optical results showed that the current density is an outstanding etching parameter that controls the porosity and uniformity of PSC substrates. A highly porous substrate was synthesized using a suitable etching current density to enhance its light absorption, thereby improving the sensitivity of UV detector with this substrate. The electrical characteristics of fabricated devices on optimized PSC substrates exhibited enhanced sensitivity and responsivity to the incident radiation.« less

Composites comprising silicon carbide fibers dispersed in magnesia-aluminate matrix and fabrication thereof and of other composites by sinter forging

DOEpatents

Panda, Prakash C.; Seydel, Edgar R.; Raj, Rishi

1989-10-03

A novel ceramic-ceramic composite of a uniform dispersion of silicon carbide fibers in a matrix of MgO.multidot.nAl.sub.2 O.sub.3 wherein n ranges from about 1 to about 4.5, said composite comprising by volume from 1 to 50% silicon carbide fibers and from 99 to 50% MgO.multidot.nAl.sub.2 O.sub.3. The composite is readily fabricated by forming a powder comprising a uniform dispersion of silicon carbide fibers in poorly crystalline phase comprising MgO and Al.sub.2 O.sub.3 in a mole ratio of n and either (a) hot pressing or preferably (b) cold pressing to form a preform and then forging utilizing a temperature in the range of 1100.degree. C. to 1900.degree. C. and a strain rate ranging from about 10.sup.-5 seconds .sup.-1 to about 1 seconds .sup.-1 so that surfaces cracks do not appear to obtain a shear deformation greater than 30%.

SiC-Based Composite Materials Obtained by Siliconizing Carbon Matrices

NASA Astrophysics Data System (ADS)

Shikunov, S. L.; Kurlov, V. N.

2017-12-01

We have developed a method for fabrication of parts of complicated configuration from composite materials based on SiC ceramics, which employs the interaction of silicon melt with the carbon matrix having a certain composition and porosity. For elevating the operating temperatures of ceramic components, we have developed a method for depositing protective silicon-carbide coatings that is based on the interaction of the silicon melt and vapor with carbon obtained during thermal splitting of hydrocarbon molecules. The new structural ceramics are characterized by higher operating temperatures; chemical stability; mechanical strength; thermal shock, wear and radiation resistance; and parameters stability.

Telescope and mirrors development for the monolithic silicon carbide instrument of the osiris narrow angle camera

NASA Astrophysics Data System (ADS)

Calvel, Bertrand; Castel, Didier; Standarovski, Eric; Rousset, Gérard; Bougoin, Michel

2017-11-01

The international Rosetta mission, now planned by ESA to be launched in January 2003, will provide a unique opportunity to directly study the nucleus of comet 46P/Wirtanen and its activity in 2013. We describe here the design, the development and the performances of the telescope of the Narrow Angle Camera of the OSIRIS experiment et its Silicon Carbide telescope which will give high resolution images of the cometary nucleus in the visible spectrum. The development of the mirrors has been specifically detailed. The SiC parts have been manufactured by BOOSTEC, polished by STIGMA OPTIQUE and ion figured by IOM under the prime contractorship of ASTRIUM. ASTRIUM was also in charge of the alignment. The final optical quality of the aligned telescope is 30 nm rms wavefront error.

Current Status and Recent Research Achievements in SiC/SiC Composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katoh, Yutai; Snead, Lance L.; Henager, Charles H.

2014-12-01

The development and maturation of the silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen the evolution from fundamental development and understanding of the material system and its behavior in a hostile irradiation environment to the current effort which essentially is a broad-based program of technology, directed at moving this material class from a laboratory curiosity to an engineering material. This paper lays out the recent international scientific and technological achievements in the development of SiC/SiC composite material technologies for fusion application and will discuss future research directions. It also reviews the materials system inmore » the larger context of progress to maturity as an engineering material for both the larger nuclear community and for general engineering applications.« less

Processing and Properties of Silicon Carbide Reinforced Reaction Bonded Silicon Nitride Composites

DTIC Science & Technology

1992-11-30

work as well as of polymer derived and composite parts will be discussed. 3. Mechanical Behavior of a Continuous SiC Fiber Reinforced RBSN, S.V...Silicon carbide paniculate composites exhibited improved fracture toughnesses and evidence of R-Curve behavior. Composites made with SiC (w...i£L LIST OF TABLES Page No. 1. Summary of mechanical properties measured for RBSN and RBSN/ SiC 7 composites 2. Summary of characteristics for

Microstructure and Mechanical Properties of Reaction-Formed Joints in Reaction Bonded Silicon Carbide Ceramics

NASA Technical Reports Server (NTRS)

Singh, M.

1998-01-01

A reaction-bonded silicon carbide (RB-SiC) ceramic material (Carborundum's Cerastar RB-SIC) has been joined using a reaction forming approach. Microstructure and mechanical properties of three types of reaction-formed joints (350 micron, 50-55 micron, and 20-25 micron thick) have been evaluated. Thick (approximately 350 micron) joints consist mainly of silicon with a small amount of silicon carbide. The flexural strength of thick joints is about 44 plus or minus 2 MPa, and fracture always occurs at the joints. The microscopic examination of fracture surfaces of specimens with thick joints tested at room temperature revealed the failure mode to be typically brittle. Thin joints (<50-55 micron) consist of silicon carbide and silicon phases. The room and high temperature flexural strengths of thin (<50-55 micron) reaction-formed joints have been found to be at least equal to that of the bulk Cerastar RB-SIC materials because the flexure bars fracture away from the joint regions. In this case, the fracture origins appear to be inhomogeneities inside the parent material. This was always found to be the case for thin joints tested at temperatures up to 1350C in air. This observation suggests that the strength of Cerastar RB-SIC material containing a thin joint is not limited by the joint strength but by the strength of the bulk (parent) materials.

Thermal degradation study of silicon carbide threads developed for advanced flexible thermal protection systems

NASA Technical Reports Server (NTRS)

Tran, Huy Kim; Sawko, Paul M.

1992-01-01

Silicon carbide (SiC) fiber is a material that may be used in advanced thermal protection systems (TPS) for future aerospace vehicles. SiC fiber's mechanical properties depend greatly on the presence or absence of sizing and its microstructure. In this research, silicon dioxide is found to be present on the surface of the fiber. Electron Spectroscopy for Chemical Analysis (ESCA) and Scanning Electron Microscopy (SEM) show that a thin oxide layer (SiO2) exists on the as-received fibers, and the oxide thickness increases when the fibers are exposed to high temperature. ESCA also reveals no evidence of Si-C bonding on the fiber surface on both as-received and heat treated fibers. The silicon oxide layer is thought to signal the decomposition of SiC bonds and may be partially responsible for the degradation in the breaking strength observed at temperatures above 400 C. The variation in electrical resistivity of the fibers with increasing temperature indicates a transition to a higher band gap material at 350 to 600 C. This is consistent with a decomposition of SiC involving silicon oxide formation.

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet.

PubMed

Warren, Joshua A; Riddle, Matthew E; Graziano, Diane J; Das, Sujit; Upadhyayula, Venkata K K; Masanet, Eric; Cresko, Joe

2015-09-01

Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of silicon carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015-2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2-20 billion GJ depending on market adoption dynamics.

Tribological characteristics of silicon carbide whisker-reinforced alumina at elevated temperatures

NASA Technical Reports Server (NTRS)

Dellacorte, Christopher

1991-01-01

The enhanced fracture toughness of whisker reinforced ceramics makes them attractive candidates for sliding components of advanced hear engines. Examples include piston rings and valve stems for Stirling engines and other low heat rejection devices. However, the tribological behavior of whisker reinforced ceramics is largely unknown. This is especially true for the applications described where use temperatures can vary from below ambient to well over 1000 C. An experimental research program to identify the dominant wear mechanism(s) for a silicon carbide whisker reinforced alumina composite, SiCw-Al2O3 is described. In addition, a wear mechanism model is developed to explain and corroborate the experimental results and to provide insight for material improvement.

A fast-neutron detection detector based on fission material and large sensitive 4H silicon carbide Schottky diode detector

NASA Astrophysics Data System (ADS)

Liu, Linyue; Liu, Jinliang; Zhang, Jianfu; Chen, Liang; Zhang, Xianpeng; Zhang, Zhongbing; Ruan, Jinlu; Jin, Peng; Bai, Song; Ouyang, Xiaoping

2017-12-01

Silicon carbide radiation detectors are attractive in the measurement of the total numbers of pulsed fast neutrons emitted from nuclear fusion and fission devices because of high neutron-gamma discrimination and good radiation resistance. A fast-neutron detection system was developed based on a large-area 4H-SiC Schottky diode detector and a 235U fission target. Excellent pulse-height spectra of fission fragments induced by mono-energy deuterium-tritium (D-T) fusion neutrons and continuous energy fission neutrons were obtained. The detector is proven to be a good candidate for pulsed fast neutron detection in a complex radiation field.

Silicon carbide and other films and method of deposition

NASA Technical Reports Server (NTRS)

Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

2007-01-01

A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Dispersion toughened silicon carbon ceramics

DOEpatents

Wei, G.C.

1984-01-01

Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

40 CFR 98.282 - GHGs to report.

Code of Federal Regulations, 2014 CFR

2014-07-01

... GREENHOUSE GAS REPORTING Silicon Carbide Production § 98.282 GHGs to report. You must report: (a) CO2 process emissions from all silicon carbide process units or furnaces combined. (b) CO2, CH4, and N2O emissions from... Stationary Fuel Combustion Sources) by following the requirements of subpart C. [74 FR 56374, Oct. 30, 2009...

Surface Control of Actuated Hybrid Space Mirrors

DTIC Science & Technology

2010-10-01

precision Nanolaminate foil facesheet and Silicon Carbide ( SiC ) substrate embedded with electroactive ceramic actuators. Wavefront sensors are used to...integrate precision Nanolaminate foil facesheet with Silicon Carbide ( SiC ) substrate equipped with embedded electroactive ceramic actuators...IAC-10.C2.5.8 SURFACE CONTROL OF ACTUATED HYBRID SPACE MIRRORS Brij. N. Agrawal Naval Postgraduate School, Monterey, CA, 93943, agrawal

Thermal Simulation of a Silicon Carbide (SiC) Insulated-Gate Bipolar Transistor (IGBT) in Continuous Switching Mode

DTIC Science & Technology

operation in a DC-DC power converter switching at a frequency of up to 15 kHz. Calculations also estimated the effect of solder layers on temperature in the device....Thermal simulations were used to calculate temperatures in a silicon carbide (SiC) Insulated -Gate Bipolar Transistor (IGBT),simulating device

Silicon carbide and other films and method of deposition

NASA Technical Reports Server (NTRS)

Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy (Inventor)

2011-01-01

A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Advanced Non-Destructive Assessment Technology to Determine the Aging of Silicon Containing Materials for Generation IV Nuclear Reactors

NASA Astrophysics Data System (ADS)

Koenig, T. W.; Olson, D. L.; Mishra, B.; King, J. C.; Fletcher, J.; Gerstenberger, L.; Lawrence, S.; Martin, A.; Mejia, C.; Meyer, M. K.; Kennedy, R.; Hu, L.; Kohse, G.; Terry, J.

2011-06-01

To create an in-situ, real-time method of monitoring neutron damage within a nuclear reactor core, irradiated silicon carbide samples are examined to correlate measurable variations in the material properties with neutron fluence levels experienced by the silicon carbide (SiC) during the irradiation process. The reaction by which phosphorus doping via thermal neutrons occurs in the silicon carbide samples is known to increase electron carrier density. A number of techniques are used to probe the properties of the SiC, including ultrasonic and Hall coefficient measurements, as well as high frequency impedance analysis. Gamma spectroscopy is also used to examine residual radioactivity resulting from irradiation activation of elements in the samples. Hall coefficient measurements produce the expected trend of increasing carrier concentration with higher fluence levels, while high frequency impedance analysis shows an increase in sample impedance with increasing fluence.

Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFET

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Scheidegger, Robert J.; Lauenstein, Jean-Marie; Casey, Megan; Scheick, Leif; Hammoud, Ahmad

2013-01-01

Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.

Friction and wear of metals with a single-crystal abrasive grit of silicon carbide: Effect of shear strength of metal

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1978-01-01

Sliding friction experiments were conducted with spherical, single-crystal silicon carbide riders in contact with various metals and with metal riders in contact with silicon carbide flats. Results indicate that: (1) the friction force in the plowing of metal and (2) the groove height (corresponding to the volume of the groove) are related to the shear strength of the metal. That is, they decrease linearly as the shear strength of the bulk metal increases. Grooves are formed in metals primarily from plastic deformation, with occasional metal removal. The relation between the groove width D and the load W can be expressed by W = kD, superscript n which satisfies Meyer's law.

Silicon Carbide (SiC) Device and Module Reliability, Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field

DTIC Science & Technology

2016-05-01

AFRL-RQ-WP-TR-2016-0108 SILICON CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled... Heat Input to an Acceleration Field Kirk L. Yerkes (AFRL/RQQI) and James D. Scofield (AFRL/RQQE) Flight Systems Integration Branch (AFRL/RQQI...CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field 5a

Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Behzad, Somayeh; Chegel, Raad; Moradian, Rostam; Shahrokhi, Masoud

2014-09-01

The effects of gallium doping on the structural, electro-optical and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) are investigated by using spin-polarized density functional theory. It is found from the calculation of the formation energies that gallium substitution for silicon atom is preferred. Our results show that gallium substitution at either single carbon or silicon atom site in SiCNT could induce spontaneous magnetization. The optical studies based on dielectric function indicate that new transition peaks and a blue shift are observed after gallium doping.

Review of corrosion behavior of ceramic heat exchanger materals: Corrosion characteristics of silicon carbide and silicon nitride. Final report, September 11, 1992--March 11, 1993

DOE Office of Scientific and Technical Information (OSTI.GOV)

Munro, R.G.; Dapkunas, S.J.

1993-09-01

The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000C or higher. The environments include dry and moist oxygen, mixtures of hot gaseous vapors, molten salts, molten metals, and complex environments pertaining to coal ashes and slags.

Method of fabricating silicon carbide coatings on graphite surfaces

DOEpatents

Varacalle, D.J. Jr.; Herman, H.; Burchell, T.D.

1994-07-26

The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1,600 C which transforms the coating to silicon carbide. 3 figs.

Method of fabricating silicon carbide coatings on graphite surfaces

DOEpatents

Varacalle, Jr., Dominic J.; Herman, Herbert; Burchell, Timothy D.

1994-01-01

The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1600.degree.C. which transforms the coating to silicon carbide.

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

NASA Technical Reports Server (NTRS)

Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

2015-01-01

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources - a nominal 300-Volt high voltage input bus and a nominal 28-Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power supplies that provide power to the thruster auxiliary supplies, and two parallel 7.5 kilowatt power supplies that are capable of providing up to 15 kilowatts of total power at 300-Volts to 500-Volts to the thruster discharge supply. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall Effect Thruster. The performance of unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate the exceptional performance with full power efficiencies exceeding 97. With a space-qualified silicon carbide or similar high voltage, high efficiency power device, this design could evolve into a flight design for future missions that require high power electric propulsion systems.

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

NASA Technical Reports Server (NTRS)

Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

2015-01-01

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

Compilation of reinforced carbon-carbon transatlantic abort landing arc jet test results

NASA Technical Reports Server (NTRS)

Milhoan, James D.; Pham, Vuong T.; Yuen, Eric H.

1993-01-01

This document consists of the entire test database generated to support the Reinforced Carbon-Carbon Transatlantic Abort Landing Study. RCC components used for orbiter nose cap and wing leading edge thermal protection were originally designed to have a multi-mission entry capability of 2800 F. Increased orbiter range capability required a predicted increase in excess of 3300 F. Three test series were conducted. Test series #1 used ENKA-based RCC specimens coated with silicon carbide, treated with tetraethyl orthosilicate, sealed with Type A surface enhancement, and tested at 3000-3400 F with surface pressure of 60-101 psf. Series #2 used ENKA- or AVTEX-based RCC, with and without silicon carbide, Type A or double Type AA surface enhancement, all impregnated with TEOS, and at temperatures from 1440-3350 F with pressures from 100-350 psf. Series #3 tested ENKA-based RCC, with and without silicon carbide coating. No specimens were treated with TEOS or sealed with Type A. Surface temperatures ranged from 2690-3440 F and pressures ranged from 313-400 psf. These combined test results provided the database for establishing RCC material single-mission-limit temperature and developing surface recession correlations used to predict mass loss for abort conditions.

Process for preparing fine grain silicon carbide powder

DOEpatents

Wei, G.C.

Finely divided silicon carbide powder is obtained by mixing colloidal silica and unreacted phenolic resin in either acetone or methanol, evaporating solvent from the obtained solution to form a gel, drying and calcining the gel to polymerize the phenolic resin therein, pyrolyzing the dried and calcined gel at a temperature in the range of 500 to 1000/sup 0/C, and reacting silicon and carbon in the pyrolyzed gel at a temperature in the range of 1550 to 1700/sup 0/C to form the powder.

Ultrasonic sensor based defect detection and characterisation of ceramics.

PubMed

Kesharaju, Manasa; Nagarajah, Romesh; Zhang, Tonzhua; Crouch, Ian

2014-01-01

Ceramic tiles, used in body armour systems, are currently inspected visually offline using an X-ray technique that is both time consuming and very expensive. The aim of this research is to develop a methodology to detect, locate and classify various manufacturing defects in Reaction Sintered Silicon Carbide (RSSC) ceramic tiles, using an ultrasonic sensing technique. Defects such as free silicon, un-sintered silicon carbide material and conventional porosity are often difficult to detect using conventional X-radiography. An alternative inspection system was developed to detect defects in ceramic components using an Artificial Neural Network (ANN) based signal processing technique. The inspection methodology proposed focuses on pre-processing of signals, de-noising, wavelet decomposition, feature extraction and post-processing of the signals for classification purposes. This research contributes to developing an on-line inspection system that would be far more cost effective than present methods and, moreover, assist manufacturers in checking the location of high density areas, defects and enable real time quality control, including the implementation of accept/reject criteria. Copyright © 2013 Elsevier B.V. All rights reserved.

Thermally Stable Ohmic Contacts on Silicon Carbide Developed for High- Temperature Sensors and Electronics

NASA Technical Reports Server (NTRS)

Okojie, Robert S.

2001-01-01

The NASA aerospace program, in particular, requires breakthrough instrumentation inside the combustion chambers of engines for the purpose of, among other things, improving computational fluid dynamics code validation and active engine behavioral control (combustion, flow, stall, and noise). This environment can be as high as 600 degrees Celsius, which is beyond the capability of silicon and gallium arsenide devices. Silicon-carbide- (SiC-) based devices appear to be the most technologically mature among wide-bandgap semiconductors with the proven capability to function at temperatures above 500 degrees Celsius. However, the contact metalization of SiC degrades severely beyond this temperature because of factors such as the interdiffusion between layers, oxidation of the contact, and compositional and microstructural changes at the metal/semiconductor interface. These mechanisms have been proven to be device killers. Very costly and weight-adding packaging schemes that include vacuum sealing are sometimes adopted as a solution.

Silicon Carbide Sensors and Electronics for Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2007-01-01

Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

NASA Technical Reports Server (NTRS)

Singh, M.; Behrendt, D. R.

1992-01-01

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

Challenges and Opportunities in Reactive Processing and Applications of Advanced Ceramic Materials

NASA Technical Reports Server (NTRS)

Singh, Mrityunjay

2003-01-01

Recently, there has been a great deal of interest in the research, development, and commercialization of innovative synthesis and processing technologies for advanced ceramics and composite materials. Reactive processing approaches have been actively considered due to their robustness, flexibility, and affordability. A wide variety of silicon carbide-based advanced ceramics and composites are currently being fabricated using the processing approaches involving reactive infiltration of liquid and gaseous species into engineered fibrous or microporous carbon performs. The microporous carbon performs have been fabricated using the temperature induced phase separation and pyrolysis of two phase organic (resin-pore former) mixtures and fiber reinforcement of carbon and ceramic particulate bodies. In addition, pyrolyzed native plant cellulose tissues also provide unique carbon templates for manufacturing of non-oxide and oxide ceramics. In spite of great interest in this technology due to their affordability and robustness, there is a lack of scientific basis for process understanding and many technical challenges still remain. The influence of perform properties and other parameters on the resulting microstructure and properties of final material is not well understood. In this presentation, mechanism of silicon-carbon reaction in various systems and the effect of perform microstructure on the mechanical properties of advanced silicon carbide based materials will be discussed. Various examples of applications of reactively processed advanced silicon carbide ceramics and composite materials will be presented.

Silicon Carbide Technologies for Lightweighted Aerospace Mirrors

DTIC Science & Technology

2008-09-01

Silicon Carbide Technologies for Lightweighted Aerospace Mirrors Lawrence E. Matson (1) Ming Y. Chen (1) Brett deBlonk (2) Iwona A...glass and beryllium to produce lightweighted aerospace mirror systems has reached its limits due to the long lead times, high processing costs...for making mirror structural substrates, figuring and finishing technologies being investigated to reduce cost time and cost, and non-destructive

Ceramic-to-Metal Joining for High Temperature, High Pressure Heat Exchangers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mako, Frederick; Mako III, Frederick

2016-12-05

Designed and tested silicon carbide to metal joining and silicon carbide joining technology under high temperature and high pressure conditions. Determined that the joints maintained integrity and remained helium gas tight. These joined parts have been tested for mechanical strength, fracture toughness and hermeticity. A component testing chamber was designed and built and used for testing the joint integrity.

Molybdenum disilicide alloy matrix composite

DOEpatents

Petrovic, John J.; Honnell, Richard E.; Gibbs, W. Scott

1990-01-01

Compositions of matter consisting of matrix matrials having silicon carbide dispersed throughout them and methods of making the compositions. A matrix material is an alloy of an intermetallic compound, molybdenum disilicide, and at least one secondary component which is a refractory silicide. The silicon carbide dispersant may be in the form of VLS whiskers, VS whiskers, or submicron powder or a mixture of these forms.

Molybdenum disilicide alloy matrix composite

DOEpatents

Petrovic, John J.; Honnell, Richard E.; Gibbs, W. Scott

1991-01-01

Compositions of matter consisting of matrix materials having silicon carbide dispersed throughout them and methods of making the compositions. A matrix material is an alloy of an intermetallic compound, molybdenum disilicide, and at least one secondary component which is a refractory silicide. The silicon carbide dispersant may be in the form of VLS whiskers, VS whiskers, or submicron powder or a mixture of these forms.

Microstructural Effects on the Corrosion Behavior of Alloys and Ceramics

DTIC Science & Technology

2008-06-30

Cr ferritic- martensitic steel HCMI2A, and silicon carbide fabricated by means of chemical vapor deposition (CVD). The study focused on the effect of...12%Cr ferritic- martensitic steel HCM12A, and silicon carbide fabricated by means of chemical vapor deposition (CVD). The study focused on the effect...3 1.4.3. Ferritic/ martensitic steel H CM 12A

Modified silicon carbide whiskers

DOEpatents

Tiegs, Terry N.; Lindemer, Terrence B.

1991-01-01

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Modified silicon carbide whiskers

DOEpatents

Tiegs, T.N.; Lindemer, T.B.

1991-05-21

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

DOEpatents

Tiegs, Terry N.; Lindemer, Terrence B.

1991-01-01

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

DOEpatents

Tiegs, T.N.; Lindemer, T.B.

1991-02-19

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Ceramic composites reinforced with modified silicon carbide whiskers

DOEpatents

Tiegs, Terry N.; Lindemer, Terrence B.

1990-01-01

Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

Processing of uranium oxide and silicon carbide based fuel using polymer infiltration and pyrolysis

NASA Astrophysics Data System (ADS)

Singh, Abhishek K.; Zunjarrao, Suraj C.; Singh, Raman P.

2008-09-01

Ceramic composite pellets consisting of uranium oxide, UO 2, contained within a silicon carbide matrix, were fabricated using a novel processing technique based on polymer infiltration and pyrolysis (PIP). In this process, particles of depleted uranium oxide, in the form of U 3O 8, were dispersed in liquid allylhydridopolycarbosilane (AHPCS), and subjected to pyrolysis up to 900 °C under a continuous flow of ultra high purity argon. The pyrolysis of AHPCS, at these temperatures, produced near-stoichiometric amorphous silicon carbide ( a-SiC). Multiple polymer infiltration and pyrolysis (PIP) cycles were performed to minimize open porosity and densify the silicon carbide matrix. Analytical characterization was conducted to investigate chemical interaction between U 3O 8 and SiC. It was observed that U 3O 8 reacted with AHPCS during the very first pyrolysis cycle, and was converted to UO 2. As a result, final composition of the material consisted of UO 2 particles contained in an a-SiC matrix. The physical and mechanical properties were also quantified. It is shown that this processing scheme promotes uniform distribution of uranium fuel source along with a high ceramic yield of the parent matrix.

Breakthrough: Better Fiber for Better Products

ScienceCinema

Griffith, George; Garnier, John

2018-01-08

Researchers at Idaho National Laboratory have developed a cost-effective method for the continuous production of alpha silicon carbide fiber. The exceptionally strong, lightweight fiber could enable significant performance improvements in many everyday products.

76 FR 4282 - Notice of Petitions by Firms for Determination of Eligibility To Apply for Trade Adjustment...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-01-25

... Northampton, PA 18067. prototyping, prototype development, and manufacturing engineering consulting services.... manufactures various wear and corrosion resistant silicon carbide components for industrial customers. Any...

Advanced Environmental Barrier Coatings Developed for SiC/SiC Composite Vanes

NASA Technical Reports Server (NTRS)

Lee, Kang N.; Fox, Dennis S.; Eldridge, Jeffrey I.; Zhu, Dongming; Bansal, Narottam P.; Miller, Robert A.

2003-01-01

Ceramic components exhibit superior high-temperature strength and durability over conventional component materials in use today, signifying the potential to revolutionize gas turbine engine component technology. Silicon-carbide fiber-reinforced silicon carbide ceramic matrix composites (SiC/SiC CMCs) are prime candidates for the ceramic hotsection components of next-generation gas turbine engines. A key barrier to the realization of SiC/SiC CMC hot-section components is the environmental degradation of SiC/SiC CMCs in combustion environments. This is in the form of surface recession due to the volatilization of silica scale by water vapor. An external environmental barrier coating (EBC) is a logical approach to achieve protection and long-term durability.

Swing arm profilometer: high accuracy testing for large reaction-bonded silicon carbide optics with a capacitive probe

NASA Astrophysics Data System (ADS)

Xiong, Ling; Luo, Xiao; Hu, Hai-xiang; Zhang, Zhi-yu; Zhang, Feng; Zheng, Li-gong; Zhang, Xue-jun

2017-08-01

A feasible way to improve the manufacturing efficiency of large reaction-bonded silicon carbide optics is to increase the processing accuracy in the ground stage before polishing, which requires high accuracy metrology. A swing arm profilometer (SAP) has been used to measure large optics during the ground stage. A method has been developed for improving the measurement accuracy of SAP using a capacitive probe and implementing calibrations. The experimental result compared with the interferometer test shows the accuracy of 0.068 μm in root-mean-square (RMS) and maps in 37 low-order Zernike terms show accuracy of 0.048 μm RMS, which shows a powerful capability to provide a major input in high-precision grinding.

Thermodynamic modelling of phase equilibrium in system Ti-B-Si-C, synthesis and phases composition of borides and carbides layers on titanic alloyVT-1 at electron beam treatment in vacuum

NASA Astrophysics Data System (ADS)

Smirnyagina, N. N.; Khaltanova, V. M.; Lapina, A. E.; Dasheev, D. E.

2017-01-01

Composite layers on the basis of carbides and borides the titan and silicon on titanic alloy VT-1 are generated at diffused saturation in vacuum. Formation in a composite of MAX phase Ti3SiC2 is shown. Thermodynamic research of phase equilibrium in systems Ti-Si-C and Ti-B-C in the conditions of high vacuum is executed. The thermodynamics, formation mechanisms of superfirm layers borides and carbides of the titan and silicon are investigated.

Metal-like self-organization of periodic nanostructures on silicon and silicon carbide under femtosecond laser pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gemini, Laura; Department of Physics, Graduate School of Science, Kyoto University, 606-85802 Kyoto; FNSPE, Czech Technical University in Prague, 11519 Prague

Periodic structures were generated on Si and SiC surfaces by irradiation with femtosecond laser pulses. Self-organized structures with spatial periodicity of approximately 600 nm appear on silicon and silicon carbide in the laser fluence range just above the ablation threshold and upon irradiation with a large number of pulses. As in the case of metals, the dependence of the spatial periodicity on laser fluence can be explained by the parametric decay of laser light into surface plasma waves. The results show that the proposed model might be universally applicable to any solid state material.

Thin Carbon Layers on Nanostructured Silicon-Properties and Applications

NASA Astrophysics Data System (ADS)

Angelescu, Anca; Kleps, Irina; Miu, Mihaela; Simion, Monica; Bragaru, Adina; Petrescu, Stefana; Paduraru, Crina; Raducanu, Aurelia

Thin carbon layers such as silicon carbide (SiC) and diamond like carbon (DLC) layers on silicon, or on nanostructured silicon substrats were obtained by different methods. This paper is a review of our results in the areas of carbon layer microfabrication technologies and their properties related to different microsystem apllications. So, silicon membranes using a-SiC or DLC layers as etching mask, as well as silicon carbide membranes using a combined porous silicon — DLC structure were fabricated for sensor applications. A detailed evaluation of the field emission (FE) properties of these films was done to demonstrate their capability to be used in field emission devices. Carbon thin layers on nanostructured silicon samples were also investigated with respect to the living cell adhesion on these structures. The experiments indicate that the cell attachment on the surface of carbon coatings can be controlled by deposition parameters during the technological process.

New Structural Materials

DTIC Science & Technology

1989-03-25

3887) Tantalum Carbide (TaC) 4150 (3877) Niobium Carbide 4023 (3750) Carbon (Graphite) 3970 (3697) Zirconium Carbide 3805 (3532) Tungsten 3643 3643...process. Some fibers, especially those made of tungsten , silicon carbide, and zirconia, survived the reaction conditions. However, the ceramic bodies...displayed cracks and voids. Examination by SEM of cross’sections of the reacted parts made with tungsten fibers disclosed the presence of "whiskers

Study program to develop and evaluate die and container materials for the growth of silicon ribbons. [for development of low cost solar cells

NASA Technical Reports Server (NTRS)

Addington, L. A.; Ownby, P. D.; Yu, B. B.; Barsoum, M. W.; Romero, H. V.; Zealer, B. G.

1979-01-01

The development and evaluation of proprietary coatings of pure silicon carbide, silicon nitride, and aluminum nitride on less pure hot pressed substrates of the respective ceramic materials, is described. Silicon sessile drop experiments were performed on coated test specimens under controlled oxygen partial pressure. Prior to testing, X-ray diffraction and SEM characterization was performed. The reaction interfaces were characterized after testing with optical and scanning electron microscopy and Auger electron spectroscopy. Increasing the oxygen partial pressure was found to increase the molten silicon contact angle, apparently because adsorbed oxygen lowers the solid-vapor interfacial free energy. It was also found that adsorbed oxygen increased the degree of attack of molten silicon upon the chemical vapor deposited coatings. Cost projections show that reasonably priced, coated, molten silicon resistant refractory material shapes are obtainable.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Joining of SiC parts by polishing and hipping

DOEpatents

Rossi, Guilio A.; Pelletier, Paul J.

1990-05-15

A method of joining two pre-sintered pieces of silicon carbide is disclosed. It entails polishing the surfaces to be joined to a mirror-finish, fitting the polished surfaces together to form a composite structure, and then subjecting the composite structure to hot isostatic pressing under conditions which are sufficient to form a joint which is essentially indistinguishable from the original silicon carbide pieces.

Process for growing silicon carbide whiskers by undercooling

DOEpatents

Shalek, Peter D.

1987-01-01

A method of growing silicon carbide whiskers, especially in the .beta. form, using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection.

Mechanisms of Superplastic Deformation of Nanocrystalline Silicon Carbide Ceramics

DTIC Science & Technology

2012-08-01

These included the following: standard hot isostatic pressing (HIP), spark plasma sintering , ultra-high pressure HIP, and a multianvil pressure...96.8 2270 Multianvil apparatus 1200 3000 94.8 1130 Note: SPS = spark plasma sintering . 2 Figure 1. Ultra-high pressure HIP; 1600 °C, 980...strain rate sensitivity and flow stress. 15. SUBJECT TERMS silicon carbide, nanostructure, sintering , hot isostatic pressing, hardness 16. SECURITY

Effect of silicon carbide on devitrification of a glass coating for reusable surface insulation

NASA Technical Reports Server (NTRS)

Ransone, P. O.

1978-01-01

Devitrification (nucleation and growth of cristobalite) were investigated in the LI-0042 coating used for the space shuttle surface insulation. Excessive devitrification was found to be associated with the silicon carbide (SiC) constituent in the coating. Test results show that significant devitrification occurred only when SiC was present in the coating and when the thermal-exposure atmosphere was oxidizing.

Molybdenum disilicide alloy matrix composite

DOEpatents

Petrovic, J.J.; Honnell, R.E.; Gibbs, W.S.

1991-12-03

Compositions of matter consisting of matrix materials having silicon carbide dispersed throughout them and methods of making the compositions are disclosed. A matrix material is an alloy of an intermetallic compound, molybdenum disilicide, and at least one secondary component which is a refractory silicide. The silicon carbide dispersant may be in the form of VLS whiskers, VS whiskers, or submicron powder or a mixture of these forms. 3 figures.

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru; Latukhina, N. V.; Chepurnov, V. I.

Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction.

PubMed

Rajput, S; Chen, M X; Liu, Y; Li, Y Y; Weinert, M; Li, L

2013-01-01

When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.

Plasma deposition of amorphous silicon carbide thin films irradiated with neutrons

NASA Astrophysics Data System (ADS)

Huran, J.; Bohacek, P.; Kucera, M.; Kleinova, A.; Sasinkova, V.; IEE SAS, Bratislava, Slovakia Team; Polymer Institute, SAS, Bratislava, Slovakia Team; Institute of Chemistry, SAS, Bratislava, Slovakia Team

2015-09-01

Amorphous silicon carbide and N-doped silicon carbide thin films were deposited on P-type Si(100) wafer by plasma enhanced chemical vapor deposition (PECVD) technology using silane, methane, ammonium and argon gases. The concentration of elements in the films was determined by RBS and ERDA method. Chemical compositions were analyzed by FTIR spectroscopy. Photoluminescence properties were studied by photoluminescence spectroscopy (PL). Irradiation of samples with various neutron fluencies was performed at room temperature. The films contain silicon, carbon, hydrogen, nitrogen and small amount of oxygen. From the IR spectra, the films contained Si-C, Si-H, C-H, Si-N, N-H and Si-O bonds. No significance effect on the IR spectra after neutron irradiation was observed. PL spectroscopy results of films showed decreasing PL intensity after neutron irradiation and PL intensity decreased with increased neutron fluencies. The measured current of the prepared structures increased after irradiation with neutrons and rise up with neutron fluencies.

Material Analysis of Coated Siliconized Silicon Carbide (SiSiC) Honeycomb Structures for Thermochemical Hydrogen Production

PubMed Central

Neises-von Puttkamer, Martina; Simon, Heike; Schmücker, Martin; Roeb, Martin; Sattler, Christian; Pitz-Paal, Robert

2013-01-01

In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC) honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD) and Scanning Electron Microscopy (SEM) with corresponding micro analysis after testing in order to characterize the changes in morphology and composition. Comparison of several treated monoliths revealed the formation of various reaction products such as SiO2, zircon (ZrSiO4), iron silicide (FeSi) and hercynite (FeAl2O4) indicating the occurrence of various side reactions between the different phases of the coating as well as between the coating and the SiSiC substrate. The investigations showed that the ferrite is mainly reduced through reaction with silicon (Si), which is present in the SiSiC matrix, and silicon carbide (SiC). These results led to the formulation of a new redox mechanism for this system in which Zn-ferrite is reduced through Si forming silicon dioxide (SiO2) and through SiC forming SiO2 and carbon monoxide. A decline of hydrogen production within the first 20 cycles is suggested to be due to the growth of a silicon dioxide and zircon layer which acts as a diffusion barrier for the reacting specie. PMID:28809316

Material Analysis of Coated Siliconized Silicon Carbide (SiSiC) Honeycomb Structures for Thermochemical Hydrogen Production.

PubMed

Neises-von Puttkamer, Martina; Simon, Heike; Schmücker, Martin; Roeb, Martin; Sattler, Christian; Pitz-Paal, Robert

2013-01-31

In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC) honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD) and Scanning Electron Microscopy (SEM) with corresponding micro analysis after testing in order to characterize the changes in morphology and composition. Comparison of several treated monoliths revealed the formation of various reaction products such as SiO₂, zircon (ZrSiO₄), iron silicide (FeSi) and hercynite (FeAl₂O₄) indicating the occurrence of various side reactions between the different phases of the coating as well as between the coating and the SiSiC substrate. The investigations showed that the ferrite is mainly reduced through reaction with silicon (Si), which is present in the SiSiC matrix, and silicon carbide (SiC). These results led to the formulation of a new redox mechanism for this system in which Zn-ferrite is reduced through Si forming silicon dioxide (SiO₂) and through SiC forming SiO₂ and carbon monoxide. A decline of hydrogen production within the first 20 cycles is suggested to be due to the growth of a silicon dioxide and zircon layer which acts as a diffusion barrier for the reacting specie.

CREE: Making the Switch

ScienceCinema

Grider, David; Palmer, John

2018-05-11

CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2014-04-30

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors

NASA Astrophysics Data System (ADS)

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J.; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E.; Iacopi, Francesca

2015-10-01

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square-1 from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g-1. This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors.

PubMed

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E; Iacopi, Francesca

2015-10-30

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square(-1) from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g(-1). This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

Protective coating for ceramic materials

NASA Technical Reports Server (NTRS)

Kourtides, Demetrius A. (Inventor); Churchward, Rex A. (Inventor); Lowe, David M. (Inventor)

1994-01-01

A protective coating for ceramic materials such as those made of silicon carbide, aluminum oxide, zirconium oxide, aluminoborosilicate and silicon dioxide, and a thermal control structure comprising a ceramic material having coated thereon the protective coating. The protective coating contains, in admixture, silicon dioxide powder, colloidal silicon dioxide, water, and one or more emittance agents selected from silicon tetraboride, silicon hexaboride, silicon carbide, molybdenum disilicide, tungsten disilicide and zirconium diboride. In another aspect, the protective coating is coated on a flexible ceramic fabric which is the outer cover of a composite insulation. In yet another aspect, a metallic foil is bonded to the outer surface of a ceramic fabric outer cover of a composite insulation via the protective coating. A primary application of this invention is as a protective coating for ceramic materials used in a heat shield for space vehicles subjected to very high aero-convective heating environments.

Low-cost Solar Array Project. Feasibility of the Silane Process for Producing Semiconductor-grade Silicon

NASA Technical Reports Server (NTRS)

1979-01-01

The feasibility of Union Carbide's silane process for commercial application was established. An integrated process design for an experimental process system development unit and a commercial facility were developed. The corresponding commercial plant economic performance was then estimated.

Process for growing silicon carbide whiskers by undercooling

DOEpatents

Shalek, P.D.

1987-10-27

A method of growing silicon carbide whiskers, especially in the [beta] form, is disclosed using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection. 3 figs.

Three Dimensional Positron Annihilation Momentum Spectroscopy of Lithium Tetraborate Crystals

DTIC Science & Technology

2013-03-21

Technique Applied to Measure Oxygen-Atom Defects in 6H Silicon Carbide ." AFIT PhD Dissertation. AFIT/DS/ENP/10-M02, (Mar 2010) [4] Charlton, M., and...of Experimental Observables of Positron-Vacancy Complexes in Silicon Carbide .” Ph.D. dissertation, Air Force Institute of Technology, 2005. [18...Resonances ............................ 19 2.1.2 3D Positron Annihilation Momentum Measurements (3DPAMMs) of 6H SiC

Joining and Assembly of Silicon Carbide-based Advanced Ceramics and Composites for High Temperature Applications

NASA Technical Reports Server (NTRS)

Singh, M.

2004-01-01

Silicon carbide based advanced ceramics and fiber reinforced composites are under active consideration for use in wide variety of high temperature applications within the aeronautics, space transportation, energy, and nuclear industries. The engineering designs of ceramic and composite component require fabrication and manufacturing of large and complex shaped parts of various thicknesses. In many instances, it is more economical to build up complex shapes by joining simple geometrical shapes. In addition these components have to be joined or assembled with metallic sub-components. Thus, joining and attachment have been recognized as enabling technologies for successful utilization of ceramic components in various demanding applications. In this presentation, various challenges and opportunities in design, fabrication, and testing o high temperature joints in ceramic matrix composites will be presented. Silicon carbide based advanced ceramics (CVD and hot pressed), and C/SiC and SiC/SiC composites, in different shapes and sizes, have been joined using an affordable, robust ceramic joining technology (ARCJoinT). Microstructure and high temperature mechanical properties of joints in silicon carbide ceramics and CVI and melt infiltrated SiC matrix composites will,be reported. Various joint design philosophies and design issues in joining of ceramics and composites well be discussed.

Feasibility of Electrochemical Deposition of Nickel/Silicon Carbide Fibers Composites over Nickel Superalloys

NASA Astrophysics Data System (ADS)

Ambrosio, E. P.; Abdul Karim, M. R.; Pavese, M.; Biamino, S.; Badini, C.; Fino, P.

2017-05-01

Nickel superalloys are typical materials used for the hot parts of engines in aircraft and space vehicles. They are very important in this field as they offer high-temperature mechanical strength together with a good resistance to oxidation and corrosion. Due to high-temperature buckling phenomena, reinforcement of the nickel superalloy might be needed to increase stiffness. For this reason, it was thought to investigate the possibility of producing composite materials that might improve properties of the metal at high temperature. The composite material was produced by using electrochemical deposition method in which a composite with nickel matrix and long silicon carbide fibers was deposited over the nickel superalloy. The substrate was Inconel 718, and monofilament continuous silicon carbide fibers were chosen as reinforcement. Chemical compatibility was studied between Inconel 718 and the reinforcing fibers, with fibers both in an uncoated condition, and coated with carbon or carbon/titanium diboride. Both theoretical calculations and experiments were conducted, which suggested the use of a carbon coating over the fibers and a buffer layer of nickel to avoid unwanted reactions between the substrate and silicon carbide. Deposition was then performed, and this demonstrated the practical feasibility of the process. Yield strength was measured to detect the onset of interface debonding between the substrate and the composite layer.

[Synergetic effects of silicon carbide and molecular sieve loaded catalyst on microwave assisted catalytic oxidation of toluene].

PubMed

Wang, Xiao-Hui; Bo, Long-Li; Liu, Hai-Nan; Zhang, Hao; Sun, Jian-Yu; Yang, Li; Cai, Li-Dong

2013-06-01

Molecular sieve loaded catalyst was prepared by impregnation method, microwave-absorbing material silicon carbide and the catalyst were investigated for catalytic oxidation of toluene by microwave irradiation. Research work examined effects of silicon carbide and molecular sieve loading Cu-V catalyst's mixture ratio as well as mixed approach changes on degradation of toluene, and characteristics of catalyst were measured through scanning electron microscope, specific surface area test and X-ray diffraction analysis. The result showed that the fixed bed reactor had advantages of both thermal storage property and low-temperature catalytic oxidation when 20% silicon carbide was filled at the bottom of the reactor, and this could effectively improve the utilization of microwave energy as well as catalytic oxidation efficiency of toluene. Under microwave power of 75 W and 47 W, complete-combustion temperatures of molecular sieve loaded Cu-V catalyst and Cu-V-Ce catalyst to toluene were 325 degrees C and 160 degrees C, respectively. Characteristics of the catalysts showed that mixture of rare-earth element Ce increased the dispersion of active components in the surface of catalyst, micropore structure of catalyst effectively guaranteed high adsorption capacity for toluene, while amorphous phase of Cu and V oxides increased the activity of catalyst greatly.

Reactive Fusion Welding for Ultra-High Temperature Ceramic Composite Joining

DTIC Science & Technology

2015-03-16

Titanium diboride TiC-Titanium carbide C-Carbon SiC - Silicon carbide B4C-Boron carbide 67 W-Tungsten WC-Tungsten carbide ZrB2-20ZrC-ZrB2...ceramics with a nominal carbide content of 20 vol% were prepared. Starting powders were mechanically mixed by ball milling ZrB2 (H.C. Starck; Grade B...0.50 wt%, or ~1.5 vol%. Milling was carried out in acetone for 2 hours using tungsten carbide media. After milling, the powder slurry was dried

High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

NASA Technical Reports Server (NTRS)

Pinero, Luis R.; Scheidegger, Robert J.; Aulsio, Michael V.; Birchenough, Arthur G.

2014-01-01

A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

Current status and recent research achievements in SiC/SiC composites

NASA Astrophysics Data System (ADS)

Katoh, Y.; Snead, L. L.; Henager, C. H.; Nozawa, T.; Hinoki, T.; Iveković, A.; Novak, S.; Gonzalez de Vicente, S. M.

2014-12-01

The silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen a continual evolution from development a fundamental understanding of the material system and its behavior in a hostile irradiation environment to the current effort which is directed at a broad-based program of technology maturation program. In essence, over the past few decades this material system has steadily moved from a laboratory curiosity to an engineering material, both for fusion structural applications and other high performance application such as aerospace. This paper outlines the recent international scientific and technological achievements towards the development of SiC/SiC composite material technologies for fusion application and discusses future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and broader engineering applications.

Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

NASA Technical Reports Server (NTRS)

Rustioni, M.; Margadonna, D.; Pirazzi, R.; Pizzini, S.

1986-01-01

A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

Diamond Composite Films for Protective Coatings on Metals and Method of Formation

NASA Technical Reports Server (NTRS)

Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

1997-01-01

Composite films consisting of diamond crystallites and hard amorphous films such as diamond-like carbon, titanium nitride, and titanium oxide are provided as protective coatings for metal substrates against extremely harsh environments. A composite layer having diamond crystallites and a hard amorphous film is affixed to a metal substrate via an interlayer including a bottom metal silicide film and a top silicon carbide film. The interlayer is formed either by depositing metal silicide and silicon carbide directly onto the metal substrate, or by first depositing an amorphous silicon film, then allowing top and bottom portions of the amorphous silicon to react during deposition of the diamond crystallites, to yield the desired interlayer structure.

Substitution of ceramics for high temperature alloys. [advantages of using silicon carbides and silicon nitrides in gas turbine engines

NASA Technical Reports Server (NTRS)

Probst, H. B.

1978-01-01

The high temperature capability of ceramics such as silicon nitride and silicon carbide can result in turbine engines of improved efficiency. Other advantages when compared to the nickel and cobalt alloys in current use are raw material availability, lower weight, erosion/corrosion resistance, and potentially lower cost. The use of ceramics in three different sizes of gas turbine is considered; these are the large utility turbines, advanced aircraft turbines, and small automotive turbines. Special consideration, unique to each of these applications, arise when one considers substituting ceramics for high temperature alloys. The effects of material substitutions are reviewed in terms of engine performance, operating economy, and secondary effects.

Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

NASA Astrophysics Data System (ADS)

Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

2016-09-01

High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

New Deep Reactive Ion Etching Process Developed for the Microfabrication of Silicon Carbide

NASA Technical Reports Server (NTRS)

Evans, Laura J.; Beheim, Glenn M.

2005-01-01

Silicon carbide (SiC) is a promising material for harsh environment sensors and electronics because it can enable such devices to withstand high temperatures and corrosive environments. Microfabrication techniques have been studied extensively in an effort to obtain the same flexibility of machining SiC that is possible for the fabrication of silicon devices. Bulk micromachining using deep reactive ion etching (DRIE) is attractive because it allows the fabrication of microstructures with high aspect ratios (etch depth divided by lateral feature size) in single-crystal or polycrystalline wafers. Previously, the Sensors and Electronics Branch of the NASA Glenn Research Center developed a DRIE process for SiC using the etchant gases sulfur hexafluoride (SF6) and argon (Ar). This process provides an adequate etch rate of 0.2 m/min and yields a smooth surface at the etch bottom. However, the etch sidewalls are rougher than desired, as shown in the preceding photomicrograph. Furthermore, the resulting structures have sides that slope inwards, rather than being precisely vertical. A new DRIE process for SiC was developed at Glenn that produces smooth, vertical sidewalls, while maintaining an adequately high etch rate.

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

NASA Technical Reports Server (NTRS)

Schmid, F.; Khattak, C. P.

1977-01-01

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Body of Knowledge for Silicon Carbide Power Electronics

NASA Technical Reports Server (NTRS)

Boomer, Kristen; Lauenstein, Jean-Marie; Hammoud, Ahmad

2016-01-01

Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

Reinforced Carbon Carbon (RCC) oxidation resistant material samples - Baseline coated, and baseline coated with tetraethyl orthosilicate (TEOS) impregnation

NASA Technical Reports Server (NTRS)

Gantz, E. E.

1977-01-01

Reinforced carbon-carbon material specimens were machined from 19 and 33 ply flat panels which were fabricated and processed in accordance with the specifications and procedures accepted for the fabrication and processing of the leading edge structural subsystem (LESS) elements for the space shuttle orbiter. The specimens were then baseline coated and tetraethyl orthosilicate impregnated, as applicable, in accordance with the procedures and requirements of the appropriate LESS production specifications. Three heater bars were ATJ graphite silicon carbide coated with the Vought 'pack cementation' coating process, and three were stackpole grade 2020 graphite silicon carbide coated with the chemical vapor deposition process utilized by Vought in coating the LESS shell development program entry heater elements. Nondestructive test results are reported.

Finite element based simulation on friction stud welding of metal matrix composites to steel

NASA Astrophysics Data System (ADS)

Hynes, N. Rajesh Jesudoss; Tharmaraj, R.; Velu, P. Shenbaga; Kumar, R.

2016-05-01

Friction welding is a solid state joining technique used for joining similar and dissimilar materials with high integrity. This new technique is being successfully applied to the aerospace, automobile, and ship building industries, and is attracting more and more research interest. The quality of Friction Stud Welded joints depends on the frictional heat generated at the interface. Hence, thermal analysis on friction stud welding of stainless steel (AISI 304) and aluminium silicon carbide (AlSiC) combination is carried out in the present work. In this study, numerical simulation is carried out using ANSYS software and the temperature profiles are predicted at various increments of time. The developed numerical model is found to be adequate to predict temperature distribution of friction stud weld aluminium silicon carbide/stainless steel joints.

Ceramic with zircon coating

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor)

2003-01-01

An article comprises a silicon-containing substrate and a zircon coating. The article can comprise a silicon carbide/silicon (SiC/Si) substrate, a zircon (ZrSiO.sub.4) intermediate coating and an external environmental/thermal barrier coating.

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

NASA Technical Reports Server (NTRS)

Gokoglu, S. A.; Kuczmarski, M. A.

1993-01-01

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Joshua A.; Riddle, Matthew E.; Graziano, Diane J.

2015-08-12

Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of siliconmore » carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015–2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2–20 billion GJ depending on market adoption dynamics.« less

Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

NASA Astrophysics Data System (ADS)

Colston, Gerard; Myronov, Maksym

2017-11-01

Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

Producing Silicon Carbide for Semiconductor Devices

NASA Technical Reports Server (NTRS)

Hsu, G. C.; Rohatgi, N. K.

1986-01-01

Processes proposed for production of SiC crystals for use in semiconductors operating at temperatures as high as 900 degrees C. Combination of new processes produce silicon carbide chips containing epitaxial layers. Chips of SiC first grown on porous carbon matrices, then placed in fluidized bed, where additional layer of SiC grows. Processes combined to yield complete process. Liquid crystallization process used to make SiC particles or chips for fluidized-bed process.

Ab initio density functional theory investigation of structural and electronic properties of double-walled silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

2009-12-01

By using ab initio density functional theory, the structural and electronic properties of (n,n)@(11,11) double-walled silicon carbide nanotubes (SiCNTs) are investigated. Our calculations reveal the existence of an energetically favorable double-walled nanotube whose interwall distance is about 4.3 Å. Interwall spacing and curvature difference are found to be essential for the electronic states around the Fermi level.

Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

NASA Technical Reports Server (NTRS)

Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

2014-01-01

This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

Strengthening silicon carbide by quenching

NASA Technical Reports Server (NTRS)

Gruver, R. M.; Platts, D. R.; Kirchner, H. P.

1974-01-01

Quenching was used to form compressive surface layers in hot-pressed silicon carbide. The presence of the compressive stresses was verified by slotted rod tests. The slotted rod tip deflection was retained at temperatures to at least 1380 C, showing that the stresses are not relieved immediately at elevated temperatures. The flexural strength and impact resistance of specimens quenched from moderate temperatures (2000 C) were increased. Frequently, specimens quenched from higher temperatures were weakened by thermal shock damage.

Low blow Charpy impact of silicon carbides

NASA Technical Reports Server (NTRS)

Abe, H.; Chandan, H. C.; Bradt, R. C.

1978-01-01

The room-temperature impact resistance of several commercial silicon carbides was examined using an instrumented pendulum-type machine and Charpy-type specimens. Energy balance compliance methods and fracture toughness approaches, both applicable to other ceramics, were used for analysis. The results illustrate the importance of separating the machine and the specimen energy contributions and confirm the equivalence of KIc and KId. The material's impact energy was simply the specimen's stored elastic strain energy at fracture.

Method for machining holes in composite materials

NASA Technical Reports Server (NTRS)

Daniels, Julia G. (Inventor); Ledbetter, Frank E., III (Inventor); Clemons, Johnny M. (Inventor); Penn, Benjamin G. (Inventor); White, William T. (Inventor)

1987-01-01

A method for boring well defined holes in a composite material such as graphite/epoxy is discussed. A slurry of silicon carbide powder and water is projected onto a work area of the composite material in which a hole is to be bored with a conventional drill bit. The silicon carbide powder and water slurry allow the drill bit, while experiencing only normal wear, to bore smooth, cylindrical holes in the composite material.

Surface/subsurface observation and removal mechanisms of ground reaction bonded silicon carbide

NASA Astrophysics Data System (ADS)

Yao, Wang; Zhang, Yu-Min; Han, Jie-cai; Zhang, Yun-long; Zhang, Jian-han; Zhou, Yu-feng; Han, Yuan-yuan

2006-01-01

Reaction Bonded Silicon Carbide (RBSiC) has long been recognized as a promising material for optical applications because of its unique combination of favorable properties and low-cost fabrication. Grinding of silicon carbide is difficult because of its high hardness and brittleness. Grinding often induces surface and subsurface damage, residual stress and other types of damage, which have great influence on the ceramic components for optical application. In this paper, surface integrity, subsurface damage and material removal mechanisms of RBSiC ground using diamond grinding wheel on creep-feed surface grinding machine are investigated. The surface and subsurface are studied with scanning electron microscopy (SEM) and optical microscopy. The effects of grinding conditions on surface and subsurface damage are discussed. This research links the surface roughness, surface and subsurface cracks to grinding parameters and provides valuable insights into the material removal mechanism and the dependence of grind induced damage on grinding conditions.

Sintering and microstructure of silicon carbide ceramic with Y3Al5O12 added by sol-gel method*

PubMed Central

Guo, Xing-zhong; Yang, Hui

2005-01-01

Silicon carbide (SiC) ceramic with YAG (Y3Al5O12) additive added by sol-gel method was liquid-phase sintered at different sintering temperatures, and the sintering mechanism and microstructural characteristics of resulting silicon carbide ceramics were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and elemental distribution of surface (EDS). YAG (yttrium aluminum garnet) phase formed before the sintering and its uniform distribution in the SiC/YAG composite powder decreased the sintering temperature and improved the densification of SiC ceramic. The suitable sintering temperature was 1860 °C with the specimen sintered at this temperature having superior sintering and mechanical properties, smaller crystal size and fewer microstructure defects. Three characteristics of improved toughness of SiC ceramic with YAG added by sol-gel method were microstructural densification, main-crack deflection and crystal ‘bridging’. PMID:15682507

Performance characteristics of supercapacitor electrodes made of silicon carbide nanowires grown on carbon fabric

NASA Astrophysics Data System (ADS)

Gu, Lin; Wang, Yewu; Fang, Yanjun; Lu, Ren; Sha, Jian

2013-12-01

In this paper, we report the supercapacitor electrodes with excellent cycle stability, which are made of silicon carbide nanowires (SiC NWs) grown on flexible carbon fabric. A high areal capacitance of 23 mF cm-2 is achieved at a scan rate of 50 mV s-1 at room temperature and capacitances increase with the rise of the working temperature. Owing to the excellent thermal stability of SiC NWs and carbon fabric, no observable decrease of capacitance occurs at room temperature (20 °C) after 105 cycles, which satisfies the demands of the commercial applications. Further increasing the measurement temperature to 60 °C, 90% of the initial capacitance is still retained after 105 cycles. This study shows that silicon carbide nanowires on carbon fabric are a promising electrode material for high temperature and stable micro-supercapacitors.

Natural occurrence of silicon carbide in a diamondiferous kimberlite from Fuxian

USGS Publications Warehouse

Leung, I.; Guo, W.; Friedman, I.; Gleason, J.

1990-01-01

Considerable debate surrounds the existence of silicon carbide in nature, mostly owing to the problem of possible contamination by man-made SiC. Recently, Gurney1 reviewed reports of rare SiC inclusions in diamonds, and noted that SiC can only be regarded as a probable rather than proven cogenetic mineral. Here we report our observation of clusters of SiC coexisting with diamond in a kimberlite from Fuxian, China. Macrocrysts of ??-SiC are overgrown epitaxially by ??-SiC, and both polymorphs are structurally well ordered. We have also measured the carbon isotope compositions of SiC and diamonds from Fuxian. We find that SiC is more enriched in 12C than diamond by 20% relative to the PDB standard. Isotope fractionation might have occurred through an isotope exchange reaction in a common carbon reservoir. Silicon carbide may thus ultimately provide information on carbon cycling in the Earth's mantle.

Adhesion, friction, and wear of binary alloys in contact with single-crystal silicon carbide

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1980-01-01

Sliding friction experiments, conducted with various iron base alloys (alloying elements are Ti, Cr, Mn, Ni, Rh and W) in contact with a single crystal silicon carbide /0001/ surface in vacuum are discussed. Results indicate atomic size misfit and concentration of alloying elements play a dominant role in controlling adhesion, friction, and wear properties of iron-base binary alloys. The controlling mechanism of the alloy properties is as an intrinsic effect involving the resistance to shear fracture of cohesive bonding in the alloy. The coefficient of friction generally increases with an increase in solute concentration. The coefficient of friction increases as the solute-to-iron atomic radius ratio increases or decreases from unity. Alloys having higher solute concentration produce more transfer to silicon carbide than do alloys having low solute concentrations. The chemical activity of the alloying element is also an important parameter in controlling adhesion and friction of alloys.

Evaluation of silicon carbide fiber/titanium composites

NASA Technical Reports Server (NTRS)

Jech, R. W.; Signorelli, R. A.

1979-01-01

Izod impact, tensile, and modulus of elasticity were determined for silicon carbide fiber/titanium composites to evaluate their potential usefulness as substitutes for titanium alloys or stainless steel in stiffness critical applications for aircraft turbine engines. Variations in processing conditions and matrix ductility were examined to produce composites having good impact strength in both the as-fabricated condition and after air exposure at elevated temperature. The impact strengths of composites containing 36 volume percent silicon carbide (SiC) fiber in an unalloyed (A-40) titanium matrix were found to be equal to unreinforced titanium-6 aluminum-4 vanadium alloy; the tensile strengths of the composites were marginally better than the unreinforced unalloyed (A-70) matrix at elevated temperature, though not at room temperature. At room temperature the modulus of elasticity of the composites was 48 percent higher than titanium or its alloys and 40 percent higher than that of stainless steel.

Diffusion Bonding of Silicon Carbide for MEMS-LDI Applications

NASA Technical Reports Server (NTRS)

Halbig, Michael C.; Singh, Mrityunjay; Shpargel, Tarah P.; Kiser, J. Douglas

2007-01-01

A robust joining approach is critically needed for a Micro-Electro-Mechanical Systems-Lean Direct Injector (MEMS-LDI) application which requires leak free joints with high temperature mechanical capability. Diffusion bonding is well suited for the MEMS-LDI application. Diffusion bonds were fabricated using titanium interlayers between silicon carbide substrates during hot pressing. The interlayers consisted of either alloyed titanium foil or physically vapor deposited (PVD) titanium coatings. Microscopy shows that well adhered, crack free diffusion bonds are formed under optimal conditions. Under less than optimal conditions, microcracks are present in the bond layer due to the formation of intermetallic phases. Electron microprobe analysis was used to identify the reaction formed phases in the diffusion bond. Various compatibility issues among the phases in the interlayer and substrate are discussed. Also, the effects of temperature, pressure, time, silicon carbide substrate type, and type of titanium interlayer and thickness on the microstructure and composition of joints are discussed.

Formation of silicon carbide by laser ablation in graphene oxide-N-methyl-2-pyrrolidone suspension on silicon surface

NASA Astrophysics Data System (ADS)

Jaleh, Babak; Ghasemi, Samaneh; Torkamany, Mohammad Javad; Salehzadeh, Sadegh; Maleki, Farahnaz

2018-01-01

Laser ablation of a silicon wafer in graphene oxide-N-methyl-2-pyrrolidone (GO-NMP) suspension was carried out with a pulsed Nd:YAG laser (pulse duration = 250 ns, wavelength = 1064 nm). The surface of silicon wafer before and after laser ablation was studied using optical microscopy, scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The results showed that the ablation of silicon surface in liquid by pulsed laser was done by the process of melt expulsion under the influence of the confined plasma-induced pressure or shock wave trapped between the silicon wafer and the liquid. The X-ray diffraction‌ (XRD) pattern of Si wafer after laser ablation showed that 4H-SiC layer is formed on its surface. The formation of the above layer was also confirmed by Raman spectroscopy, and X-ray photoelectron spectroscopy‌ (XPS), as well as EDX was utilized. The reflectance of samples decreased with increasing pulse energy. Therefore, the morphological alteration and the formation of SiC layer at high energy increase absorption intensity in the UV‌-vis regions. Theoretical calculations confirm that the formation of silicon carbide from graphene oxide and silicon wafer is considerably endothermic. Development of new methods for increasing the reflectance without causing harmful effects is still an important issue for crystalline Si solar cells. By using the method described in this paper, the optical properties of solar cells can be improved.

Gas Atmospheres Improve Silicon-Ribbon Quality

NASA Technical Reports Server (NTRS)

Wald, F. V.; Kalejs, J. P.

1985-01-01

Growing crystal surrounded by gas containing carbon or oxygen. Ribbon of solid silicon, edgewise, grows from pool of molten silicon in die. Gases flowing through orifice ensure longer diffusion length and less contaminiation by carbide particles in product.

Brittle Materials Design, High Temperature Gas Turbine

DTIC Science & Technology

1975-10-01

White Army Material and Mechanics Research Center E. M. Lenoe, R. N. Katz, D. R. Messier, H. Priest m ’■ V ..W.*.il.’■.■,:;.-M V -^.’ -i.-■..::.■ f.:irjU...Stator Vane Development 6.1.1 Design and Analysis v 6.1.2 Static Rig Testing 6.1.3 Vane Fabrication 6.1.4 Heat Transfer Tests Progress on Materials...Oxidation on the Strengths of Hot- Pressed Silicon Nitride and Silicon Carbide Properties of Yttria Hot-Pressed Silicon Nitride i ii iii iv v x 1

Aerosol-Assisted Extraction of Silicon Nanoparticles from Wafer Slicing Waste for Lithium Ion Batteries

NASA Astrophysics Data System (ADS)

Jang, Hee Dong; Kim, Hyekyoung; Chang, Hankwon; Kim, Jiwoong; Roh, Kee Min; Choi, Ji-Hyuk; Cho, Bong-Gyoo; Park, Eunjun; Kim, Hansu; Luo, Jiayan; Huang, Jiaxing

2015-03-01

A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a common cutting material on the slicing saw. Efforts in material recovery from the sludge and recycling have been largely directed towards converting silicon or silicon carbide into other chemicals. Here, we report an aerosol-assisted method to extract silicon nanoparticles from such sludge wastes and their use in lithium ion battery applications. Using an ultrasonic spray-drying method, silicon nanoparticles can be directly recovered from the mixture with high efficiency and high purity for making lithium ion battery anode. The work here demonstrated a relatively low cost approach to turn wafer slicing wastes into much higher value-added materials for energy applications, which also helps to increase the sustainability of semiconductor material and device manufacturing.

Aerosol-Assisted Extraction of Silicon Nanoparticles from Wafer Slicing Waste for Lithium Ion Batteries

PubMed Central

Jang, Hee Dong; Kim, Hyekyoung; Chang, Hankwon; Kim, Jiwoong; Roh, Kee Min; Choi, Ji-Hyuk; Cho, Bong-Gyoo; Park, Eunjun; Kim, Hansu; Luo, Jiayan; Huang, Jiaxing

2015-01-01

A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a common cutting material on the slicing saw. Efforts in material recovery from the sludge and recycling have been largely directed towards converting silicon or silicon carbide into other chemicals. Here, we report an aerosol-assisted method to extract silicon nanoparticles from such sludge wastes and their use in lithium ion battery applications. Using an ultrasonic spray-drying method, silicon nanoparticles can be directly recovered from the mixture with high efficiency and high purity for making lithium ion battery anode. The work here demonstrated a relatively low cost approach to turn wafer slicing wastes into much higher value-added materials for energy applications, which also helps to increase the sustainability of semiconductor material and device manufacturing. PMID:25819285

Abrasive slurry composition for machining boron carbide

DOEpatents

Duran, Edward L.

1985-01-01

An abrasive slurry particularly suited for use in drilling or machining boron carbide consists essentially of a suspension of boron carbide and/or silicon carbide grit in a carrier solution consisting essentially of a dilute solution of alkylaryl polyether alcohol in octyl alcohol. The alkylaryl polyether alcohol functions as a wetting agent which improves the capacity of the octyl alcohol for carrying the grit in suspension, yet without substantially increasing the viscosity of the carrier solution.

Abrasive slurry composition for machining boron carbide

DOEpatents

Duran, E.L.

1984-11-29

An abrasive slurry particularly suited for use in drilling or machining boron carbide consists essentially of a suspension of boron carbide and/or silicon carbide grit in a carrier solution consisting essentially of a dilute solution of alkylaryl polyether alcohol in octyl alcohol. The alkylaryl polyether alcohol functions as a wetting agent which improves the capacity of the octyl alcohol for carrying the grit in suspension, yet without substantially increasing the viscosity of the carrier solution.

Development of improved coating for advanced carbon-carbon components

NASA Technical Reports Server (NTRS)

Yamaki, Y. R.; Brown, J. J.

1984-01-01

Reaction sintered silicon nitride (RSSN) was studied as a substitute coating material on the carbon-carbon material (RCC) presently used as a heat shield on the space shuttle, and on advanced carbon-carbon (ACC), a later development. On RCC, RSSN showed potential in a 538 C (1000 F) screening test in which silicon carbide coated material exhibits its highest oxidation rate; RSSN afforded less protection to ACC because of a larger thermal expansion mismatch. Organosilicon densification and metallic silicon sealing methods were studied as means of further increasing the oxidation resistance of the coating, and some improvement was noted when these methods were employed.

Simple method for the growth of 4H silicon carbide on silicon substrate

NASA Astrophysics Data System (ADS)

Asghar, M.; Shahid, M. Y.; Iqbal, F.; Fatima, K.; Nawaz, Muhammad Asif; Arbi, H. M.; Tsu, R.

2016-03-01

In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat. The as grown film was characterized by XRD, FTIR, UV-Vis Spectrophotometer and Hall Measurements. The XRD pattern displayed four peaks at 2Θ angles 28.550, 32.700, 36.100 and 58.900 related to Si (1 1 1), 4H-SiC (1 0 0), 4H-SiC (1 1 1) and 4H-SiC (2 2 2), respectively. FTIR, UV-Vis spectrophotometer and electrical properties further strengthened the 4H-SiC growth.

Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Powell, J. Anthony (Inventor)

1991-01-01

This invention is a method for the controlled growth of single-crystal semiconductor device quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Larkin, David J. (Inventor); Powell, J. Anthony (Inventor)

1992-01-01

A method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles is presented. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

Residual Stresses and Thermo-Mechanical Behavior of Metal-Matrix Composites

DTIC Science & Technology

1984-01-01

necessary and identify by block number) ELO I GROUP I Sue. GR. I Metal-matrix composites Silicon -carbide/Aluminum Graphite/Alumimun Cross-plied laminate I...aluminum, tungsten/aluminum and silicon -carbide aluminum composites . For the graphite/aluminum material a parametric study was carried out on the...PROPERTIES AS GIVEN IN TABLE 2.1. 5 3.1 CALCULATED THERUMOELASTIC PROPERTIES OF A TUNG- STEN /AL 2024 COMPOSITE 54 5.1 INPUT ELASTIC CONSTANTS FOR FIBER AND

Stress Analysis of Silicon Carbide Microelectromechanical Systems Using Raman Spectroscopy

DTIC Science & Technology

2003-03-01

conformally coated with SiC[2]...........................4 2.1: Silicon carbide grinding stones or “carborundum” [1...open up contact areas to SiC-2 (mask SiC2_SiC3_VIA). Then, a 1.5 µm- thick SiC “cap” layer (SiC-3) is deposited. Note that the SiC-3 conformally coats ...84 5.2: Surface profile across the teeth of a SiC3 comb drive...........................................85 xi

Investigation of the heating behavior of carbide-bonded graphene coated silicon wafer used for hot embossing

NASA Astrophysics Data System (ADS)

Yang, Gao; Li, Lihua; Lee, Wing Bun; Ng, Man Cheung; Chan, Chang Yuen

2018-03-01

A recently developed carbide-bonded graphene (CBG) coated silicon wafer was found to be an effective micro-patterned mold material for implementing rapid heating in hot embossing processes owing to its superior electrical and thermal conductivity, in addition to excellent mechanical properties. To facilitate the achievement of precision temperature control in the hot embossing, the heating behavior of a CBG coated silicon wafer sample was experimentally investigated. First, two groups of controlled experiments were conducted for quantitatively evaluating the influence of the main factors such as the vacuum pressure and gaseous environment (vacuum versus nitrogen) on its heating performance. The electrical and thermal responses of this sample under a voltage of 60 V were then intensively analyzed, and revealed that it had somewhat semi-conducting properties. Further, we compared its thermal profiles under different settings of the input voltage and current limiting threshold. Moreover, the strong temperature dependence of electrical resistance for this material was observed and determined. Ultimately, the surface temperature of CBG coated silicon wafer could be as high as 1300 ℃, but surprisingly the graphene coating did not detach from the substrate under such an elevated temperature due to its strong thermal coupling with the silicon wafer.

Flat-plate solar array project. Volume 2: Silicon material

NASA Technical Reports Server (NTRS)

Lutwack, R.

1986-01-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Flat-plate solar array project. Volume 2: Silicon material

NASA Astrophysics Data System (ADS)

Lutwack, R.

1986-10-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Mechanical behavior of polycrystalline ceramics: Brittle fracture of SiC-Si3N4 materials

NASA Technical Reports Server (NTRS)

Ceipold, M. H.; Kapadia, C. M.; Kelkar, A. H.

1972-01-01

Research on the fracture behavior of silicon nitride and silicon carbide is reported along with the role of anion impurities in the fabrication and behavior of magnesium oxide. The results of a survey of crack propagation in SiC and Si3N4 are presented. Studies in the following areas are reported: development of a fracture toughness testing technique, constant moment beam, microcrack examination, and etching techniques.

Fabrication of lightweight Si/SiC LIDAR mirrors

NASA Technical Reports Server (NTRS)

Goela, Jitendra S.; Taylor, Raymond L.

1991-01-01

A new, chemical vapor deposition (CVD) process was developed for fabricating lightweight, polycrystalline silicon/silicon-carbide (Si/SiC) mirrors. The process involves three CVD steps: (1) to produce the mirror faceplate; (2) to form the lightweight backstructure, which is deposited integral to the faceplate; and (3) to deposit a layer of optical-grade material, e.g., Si, onto the front surface of the faceplate. The mirror figure and finish are fabricated into the faceplate.

Demonstration of Minimally Machined Honeycomb Silicon Carbide Mirrors

NASA Technical Reports Server (NTRS)

Goodman, William

2012-01-01

Honeycomb silicon carbide composite mirrors are made from a carbon fiber preform that is molded into a honeycomb shape using a rigid mold. The carbon fiber honeycomb is densified by using polymer infiltration pyrolysis, or through a reaction with liquid silicon. A chemical vapor deposit, or chemical vapor composite (CVC), process is used to deposit a polishable silicon or silicon carbide cladding on the honeycomb structure. Alternatively, the cladding may be replaced by a freestanding, replicated CVC SiC facesheet that is bonded to the honeycomb. The resulting carbon fiber-reinforced silicon carbide honeycomb structure is a ceramic matrix composite material with high stiffness and mechanical strength, high thermal conductivity, and low CTE (coefficient of thermal expansion). This innovation enables rapid, inexpensive manufacturing. The web thickness of the new material is less than 1 millimeter, and core geometries tailored. These parameters are based on precursor carbon-carbon honeycomb material made and patented by Ultracor. It is estimated at the time of this reporting that the HoneySiC(Trademark) will have a net production cost on the order of $38,000 per square meter. This includes an Ultracor raw material cost of about $97,000 per square meter, and a Trex silicon carbide deposition cost of $27,000 per square meter. Even at double this price, HoneySiC would beat NASA's goal of $100,000 per square meter. Cost savings are estimated to be 40 to 100 times that of current mirror technologies. The organic, rich prepreg material has a density of 56 kilograms per cubic meter. A charred carbon-carbon panel (volatile organics burnt off) has a density of 270 kilograms per cubic meter. Therefore, it is estimated that a HoneySiC panel would have a density of no more than 900 kilograms per cubic meter, which is about half that of beryllium and about onethird the density of bulk silicon carbide. It is also estimated that larger mirrors could be produced in a matter of weeks. Each cell is completely uniform, maintaining the shape of the inserted mandrel. Furthermore, the layup creates pressure that insures node bond strength. Each node is a composite laminate using only the inherent resin system to form the bond. This contrasts starkly with the other known method of producing composite honeycomb, in which individual corrugations are formed, cured, and then bonded together in a secondary process. By varying the size of the mandrels within the layup, varying degrees of density can be achieved. Typical sizes are 3/8 and 3/16 in. (approximately 10 and 5 millimeters). Cell sizes up to 1 in. (approximately 25 millimeters) have been manufactured. Similarly, the shape of the core can be altered for a flexible honeycomb structure.

Silicon Carbide Nanotube Oxidation at High Temperatures

NASA Technical Reports Server (NTRS)

Ahlborg, Nadia; Zhu, Dongming

2012-01-01

Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.

Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

Optimization of a hybrid exchange-correlation functional for silicon carbides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oda, Takuji; Zhang, Yanwen; Weber, William J

2013-01-01

A hybrid exchange-correlation functional is optimized in order to accurately describe the nature of silicon carbides (SiC) in the framework of ab-initio calculations based on density functional theory (DFT), especially with an aim toward future applications in defect studies. It is shown that the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional with the screening parameter of 0.15 -1 outperforms conventional exchange-correlation functionals and other popular hybrid functionals regarding description of band structures in SiC. High transferability is proven through assessment over various SiC polytypes, silicon and diamond. Excellent performance is also confirmed for other fundamental material properties including elastic constants and phonon frequency.

Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

DOEpatents

Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

2013-01-22

Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

Production and mechanical properties of Al-SiC metal matrix composites

NASA Astrophysics Data System (ADS)

Karvanis, K.; Fasnakis, D.; Maropoulos, A.; Papanikolaou, S.

2016-11-01

The usage of Al-SiC Metal Matrix Composites is constantly increasing in the last years due to their unique properties such as light weight, high strength, high specific modulus, high fatigue strength, high hardness and low density. Al-SiC composites of various carbide compositions were produced using a centrifugal casting machine. The mechanical properties, tensile and compression strength, hardness and drop-weight impact strength were studied in order to determine the optimum carbide % in the metal matrix composites. Scanning electron microscopy was used to study the microstructure-property correlation. It was observed that the tensile and the compressive strength of the composites increased as the proportion of silicon carbide became higher in the composites. Also with increasing proportion of silicon carbide in the composite, the material became harder and appeared to have smaller values for total displacement and total energy during impact testing.

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

2004-01-01

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Micro-Fabricated Solid-State Radiation Detectors for Active Personal Dosimetry

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Wrbanek, Susan Y.; Fralick, Gustave C.; Chen, Liang-Yu

2007-01-01

Active radiation dosimetry is important to human health and equipment functionality for space applications outside the protective environment of a space station or vehicle. This is especially true for long duration missions to the moon, where the lack of a magnetic field offers no protection from space radiation to those on extravehicular activities. In order to improve functionality, durability and reliability of radiation dosimeters for future NASA lunar missions, single crystal silicon carbide devices and scintillating fiber detectors are currently being investigated for applications in advanced extravehicular systems. For many years, NASA Glenn Research Center has led significant efforts in silicon carbide semiconductor technology research and instrumentation research for sensor applications under extreme conditions. This report summarizes the technical progress and accomplishments toward characterization of radiation-sensing components for the recommendation of their fitness for advanced dosimetry development.

Dispersion of Cobalt Nanoparticles on Nanowires Grown on Silicon Carbide-Alumina Nanocomposites.

PubMed

Kim, Inho; Seo, Kyeong Won; Ahn, Byoung Sung; Moon, Dong Ju; Kim, Sang Woo

2017-04-01

Silicon carbide-alumina nanocomposite supports including a nanowire architecture for a high dispersion of cobalt nanocatalysts were fabricated using a modified sol–gel process and paste extrusion process to form cylindrical shape beads, followed by thermal treatment. Well-developed aluminosilicate nanowires were formed on a nanoporous support, which are grown from a catalytic metal seed at the nanowire growth tips during heat treatment at 1,100 °C for 1 h under nitrogen gas flow. Cobalt oxide precursors were highly dispersed on the nanowires grown on the surface of the nanoporous bodies through a supercritical carbon dioxide fluid-assisted wet-impregnation process. The highly-dispersed Co nanoparticles with size of less than 10 nm were finally obtained on the nanowires via phase transitions from Co₃O₄ to CoO and from CoO to Co during the thermal reduction.

PVD Silicon Carbide as a Thin Film Packaging Technology for Antennas on LCP Substrates for Harsh Environments

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Stanton, John W.; Ponchak, George E.; Jordan, Jennifer L.; Zorman, Christian A.

2010-01-01

This paper describes an effort to develop a thin film packaging technology for microfabricated planar antennas on polymeric substrates based on silicon carbide (SiC) films deposited by physical vapor deposition (PVD). The antennas are coplanar waveguide fed dual frequency folded slot antennas fabricated on liquid crystal polymer (LCP) substrates. The PVD SiC thin films were deposited directly onto the antennas by RF sputtering at room temperature at a chamber pressure of 30 mTorr and a power level of 300 W. The SiC film thickness is 450 nm. The return loss and radiation patterns were measured before and after the SiC-coated antennas were submerged into perchloric acid for 1 hour. No degradation in RF performance or physical integrity of the antenna was observed.

Melting of SiC powders preplaced duplex stainless steel using TIG welding

NASA Astrophysics Data System (ADS)

Maleque, M. A.; Afiq, M.

2018-01-01

TIG torch welding technique is a conventional melting technique for the cladding of metallic materials. Duplex stainless steels (DSS) show decrease in performance under aggressive environment which may lead to unanticipated failure due to poor surface properties. In this research, surface modification is done by using TIG torch method where silicon carbide (SiC) particles are fused into DSS substrate in order to form a new intermetallic compound at the surface. The effect of particle size, feed rate of SiC preplacement, energy input and shielding gas flow rate on surface topography, microstructure, microstructure and hardness are investigated. Deepest melt pool (1.237 mm) is produced via TIG torch with highest energy input of 1080 J/mm. Observations of surface topography shows rippling marks which confirms that re-solidification process has taken place. Melt microstructure consist of dendritic and globular carbides precipitate as well as partially melted silicon carbides (SiC) particles. Micro hardness recorded at value ranging from 316 HV0.5 to 1277 HV0.5 which shows increment from base hardness of 260 HV0.5kgf. The analyzed result showed that incorporation of silicon carbide particles via TIG Torch method increase the hardness of DSS.

Silicon carbide sewing thread

NASA Technical Reports Server (NTRS)

Sawko, Paul M. (Inventor)

1995-01-01

Composite flexible multilayer insulation systems (MLI) were evaluated for thermal performance and compared with currently used fibrous silica (baseline) insulation system. The systems described are multilayer insulations consisting of alternating layers of metal foil and scrim ceramic cloth or vacuum metallized polymeric films quilted together using ceramic thread. A silicon carbide thread for use in the quilting and the method of making it are also described. These systems provide lightweight thermal insulation for a variety of uses, particularly on the surface of aerospace vehicles subject to very high temperatures during flight.

Disc valve for sampling erosive process streams

DOEpatents

Mrochek, J.E.; Dinsmore, S.R.; Chandler, E.W.

1986-01-07

A four-port disc valve is described for sampling erosive, high temperature process streams. A rotatable disc defining opposed first and second sampling cavities rotates between fired faceplates defining flow passageways positioned to be alternatively in axial alignment with the first and second cavities. Silicon carbide inserts and liners composed of [alpha] silicon carbide are provided in the faceplates and in the sampling cavities to limit erosion while providing lubricity for a smooth and precise operation when used under harsh process conditions. 1 fig.

Article and method for making complex shaped preform and silicon carbide composite by melt infiltration

NASA Technical Reports Server (NTRS)

Corman, Gregory S. (Inventor); Steibel, James D. (Inventor); Schikner, Robert C. (Inventor); Szweda, Andrew (Inventor)

2001-01-01

Small diameter silicon carbide-containing fibers are provided in a bundle such as a fiber tow that can be formed into a structure where the radii of curvature is not limited to 10-20 inches. An aspect of this invention is directed to impregnating the bundles of fibers with the slurry composition to substantially coat the outside surface of an individual fiber within the bundle and to form a complex shaped preform with a mass of continuous fibers.

Article and method for making complex shaped preform and silicon carbide composite by melt infiltration

NASA Technical Reports Server (NTRS)

Szweda, Andrew (Inventor); Corman, Gregory S. (Inventor); Steibel, James D. (Inventor); Schikner, Robert C. (Inventor)

2000-01-01

Small diameter silicon carbide-containing fibers are provided in a bundle such as a fiber tow that can be formed into a structure where the radii of curvature is not limited to 10-20 inches. An aspect of this invention is directed to impregnating the bundles of fibers with the slurry composition to substantially coat the outside surface of an individual fiber within the bundle and to form a complex shaped preform with a mass of continuous fibers.

The Oxidation of CVD Silicon Carbide in Carbon Dioxide

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Nguyen, QuynchGiao N.

1997-01-01

Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 100 and 500 hours at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic laws are discussed. Oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants typically found in combustion environments: oxygen and water vapor.

The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2012-01-01

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

Thermal Management Investigations in Ceramic Thin Disk Lasers

DTIC Science & Technology

2011-01-14

techniques. 10-14mm diameter 0.2mm thick disks are mounted on silicon carbide ( SiC ), sapphire, and diamond submounts. From a larger platform, more than 6kW...along with various cooling techniques. 10-14mm diameter O.2mm thick disks are mounted on silicon carbide ( SiC ), sapphire, and diamond submounts. From a...assemblies are either attached to heat sinks or directly to the Cu W cooling mount, see Fig. I (c) & (d). The heat sinks tested are SiC , sapphire, and

Determination of micro amounts of iron, aluminum, and alkaline earth metals in silicon carbide

NASA Technical Reports Server (NTRS)

Hirata, H.; Arai, M.

1978-01-01

A colorimetric method for analysis of micro components in silicon carbide used as the raw material for varistors is described. The microcomponents analyzed included iron soluble in hydrochloric acid, iron, aluminum, calcium and magnesium. Samples were analyzed by the method, and the results for iron and aluminum agreed well with the N.B.S. standard values and the values obtained by the other company. The method can therefore be applied to the analysis of actual samples.

Effects of Fiber/Matrix Interface and its Composition on Mechanical Properties of Hi Nicalon/Celsian Composites

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.; Eldridge, Jeffrey I.

1998-01-01

Fiber-reinforced ceramic matrix composites (CMC) are prospective candidate materials for high temperature structural applications in aerospace, energy conservation, power generation, nuclear, petrochemical, and other industries. At NASA Lewis, we are investigating celsian matrix composites reinforced with various types of silicon carbide fibers. The objective of the present study was to investigate the effects of fiber/matrix interface and its composition on the mechanical properties of silicon carbide (Hi-Nicalon) fiber-reinforced celsian matrix composites.

Thin film photovoltaic device with multilayer substrate

DOEpatents

Catalano, Anthony W.; Bhushan, Manjul

1984-01-01

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

NASA Astrophysics Data System (ADS)

Czapski, M.; Stora, T.; Tardivat, C.; Deville, S.; Santos Augusto, R.; Leloup, J.; Bouville, F.; Fernandes Luis, R.

2013-12-01

New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

The Formation of Carbide-Free Bainite in High-Carbon High-Silicon Steel under Isothermal Conditions

NASA Astrophysics Data System (ADS)

Tereshchenko, N. A.; Yakovleva, I. L.; Mirzaev, D. A.; Buldashev, I. V.

2017-12-01

It is shown that a carbide-free bainite structure can be formed in high-carbon steel of the Fe-Si-Mn-Cr-V system using a traditional furnace facility. The structural aspects of bainitic transformation developing under isothermal conditions at 300°C have been studied by the methods of X-ray diffraction and transmission electron microscopy. Orientation relationships between crystalline lattices of γ and α phases have been established. A superequilibrium carbon concentration in the bainite α phase has been determined.

New electrodes for biofuel cells

NASA Astrophysics Data System (ADS)

Stom, D. I.; Zhdanova, G. O.; Lashin, A. F.

2017-11-01

Two new types of electrodes for biofuel elements (BFC) are proposed. One of them is based on a microchannel plate (MCP). Its peculiarity is a special structure with a large number of glass channels being 6-10 μm in diameter with an internal semiconducting surface. The MCP operation is based on the principle of the channel secondary emission multiplication of the electrons. The second type of electrode presented in the work is made of silicon carbide. This type of electrodes has a developed porous structure. The electrode pores account for at least 30% of the total volume. The pore size varies from 10 to 100 μm. Such porosity greatly increases the anode area and volume. This allows us to achieve sorption of a larger number of microorganisms interacting with the anode and transformed by electron donors. The work of the electrodes developed in BFC was tested, their effectiveness was estimated. A comparison is made with electrodes made of carbon cloth, the most widely used material for working with BFC. It is shown that the MCP based electrode is not inferior to the power characteristics of carbon cloth. The generated power when using silicon carbide was slightly lower than the other two electrodes. However, the stability of silicon carbide to aggressive media (alkalis, acids, strong oxidants, etc.), as well as to mechanical damages gives additional advantages to such electrodes compared to the materials that are commonly used in BFC. The noted features are extremely important for the BFC to work in harsh conditions of treatment facilities and to utilize wastewater components.

Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

NASA Astrophysics Data System (ADS)

Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; Dasari, Durga B. R.; Gerhardt, Ilja; Soykal, Öney O.; Radulaski, Marina; Ohshima, Takeshi; Vučković, Jelena; Son, Nguyen Tien; Ivanov, Ivan G.; Economou, Sophia E.; Bonato, Cristian; Lee, Sang-Yun; Wrachtrup, Jörg

2018-03-01

Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3 /2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

Ceramic fibers from Si-B-C polymer precursors

NASA Technical Reports Server (NTRS)

Riccitiello, S. R.; Hsu, M. S.; Chen, T. S.

1993-01-01

Non-oxide ceramics such as silicon carbide (SiC), silicon nitride (Si3N4), and silicon borides (SiB4, SiB6) have thermal stability, oxidation resistance, hardness, and varied electrical properties. All these materials can be prepared in a fiber form from a suitable polymer precursor. The above mentioned fibers, when tested over a temperature range from 25 to 1400 C, experience degradation at elevated temperatures. Past work in ceramic materials has shown that the strength of ceramics containing both carbides and borides is sustained at elevated temperatures, with minimum oxidation. The work presented here describes the formation of ceramic fibers containing both elements, boron and silicon, prepared via the polymer precursor route previously reported by the authors, and discusses the fiber mechanical properties that are retained over the temperature range studied.

Recent advances and issues in development of silicon carbide composites for fusion applications

NASA Astrophysics Data System (ADS)

Nozawa, T.; Hinoki, T.; Hasegawa, A.; Kohyama, A.; Katoh, Y.; Snead, L. L.; Henager, C. H., Jr.; Hegeman, J. B. J.

2009-04-01

Radiation-resistant advanced silicon carbide (SiC/SiC) composites have been developed as a promising candidate of the high-temperature operating advanced fusion reactor. With the completion of the 'proof-of-principle' phase in development of 'nuclear-grade' SiC/SiC composites, the R&D on SiC/SiC composites is shifting toward the more pragmatic phase, i.e., industrialization of component manufactures and data-basing. In this paper, recent advances and issues in (1) development of component fabrication technology including joining and functional coating, e.g., a tungsten overcoat as a plasma facing barrier, (2) recent updates in characterization of non-irradiated properties, e.g., strength anisotropy and chemical compatibility with solid lithium-based ceramics and lead-lithium liquid metal breeders, and (3) irradiation effects are specifically reviewed. Importantly high-temperature neutron irradiation effects on microstructural evolution, thermal and electrical conductivities and mechanical properties including the fiber/matrix interfacial strength are specified under various irradiation conditions, indicating seemingly very minor influence on the composite performance in the design temperature range.

Research and Development of Silicon Carbide (SiC) Junction Recovery Diodes for Picosecond Range, High Power Opening Switches

NASA Astrophysics Data System (ADS)

Grekhov, Igor V.

2002-07-01

This report results from a contract tasking Ioffe Institute as follows: The purpose of the proposed project is to develop, fabricate, test, and characterize silicon carbide power semiconductor opening switches operating in the picosecond range of switch time. Special SiC diode structures will be fabricated and investigated, including Junction Recovery Diodes (JRD). The operation of such diodes is founded on the superfast recovery of the junction's blocking ability after switching the device from forward to reverse bias conditions. Our estimations show that the parameters of JRD devices can be substantially improved in case of SiC devices, compared to both Si and GaAs capabilities. We expect i) to increase the speed of switch operation, the specific commutated power, and the operation frequency repetition; ii) to reduce the weight and size of pulse devices; and iii) to achieve better reliability of the devices due to the unique thermal conductivity and radiation hardness of SiC.

Silicon carbide ceramic membranes

NASA Astrophysics Data System (ADS)

Suwanmethanond, Varaporn

This dissertation focuses on the preparation of silicon carbide (SiC) ceramic membranes on SiC substrates. An original technique of SiC porous substrate preparation using sintering methods was developed during the work for the completion of the dissertation. The resulting SiC substrates have demonstrated high porosity, high internal surface area, well interconnected surface pore network and, at the same time, good thermal, chemical and mechanical stability. In a further development, sol-gel techniques were used to deposit micro-porous SiC membranes on these SiC porous substrates. The SiC membranes were characterized by a variety of techniques: ideal gas selectivity (He and N2), XRD, BET, SEM, XPS, and AFM. The characterization results confirmed that the asymmetric sol-gel SiC membranes were of high quality, with no cracks or pinholes, and exhibiting high resistance to corrosion and high hydro-thermal stability. In conclusion, the SiC ceramic membrane work was successfully completed. Two publications in international peer reviewed journals resulted out of this work.

Nondestructive evaluation techniques for high-temperature ceramic components. Quarterly report, October--December 1977. [Silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1978-02-01

The overall objective of this program is to assess and develop nondestructive evaluation procedures for high-temperature ceramics. The program is currently evaluating ceramic heat-exchanger tubing. Ceramic heat exchangers would be useful, for example, in coal-fired Brayton conversion or waste heat-recovery systems. The use of ceramic heat exchangers will allow working fluids to reach temperatures up to 1230/sup 0/C, and, with further materials development, possibly 1650/sup 0/C. If superalloys were employed, working fluids would be limited to approximately 800/sup 0/C. The use of working fluids at higher temperatures would result in more efficient systems. Furthermore, ceramic components are lighter than metallicmore » ones and are made from less costly and more abundant elements. In addition, ceramic heat exchangers would be more resistant to corrosion. In the current NDE effort, several acoustic, optical, and radiographic techniques are being examined for their effectiveness in testing silicon carbide tubing. Some results employing dye-enhanced radiography are discussed.« less

Electrical and mechanical tuning of a silicon vacancy defect in SiC for quantum information technology

NASA Astrophysics Data System (ADS)

Soykal, Oney O.; Reinecke, Thomas L.

We develop coherent control via Stark effect over the optical transition energies of silicon monovacancy deep center in hexagonal silicon carbide. We show that this defect's unique asymmetry properties of its piezoelectric tensor and Kramer's degenerate high-spin ground/excited state configurations can be used to create new possibilities in quantum information technology ranging from photonic networks to quantum key distribution. We also give examples of its qubit implementations via precise electric field control. This work was supported in part by ONR and by the Office of Secretary of Defense, Quantum Science and Engineering Program.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lutwack, R.

The goal of the Silicon Material Task, a part of the FSA Project, was to develop and demonstrate the technology for the low-cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. To be compatible with the price goals of the FSA Project, the price of the produced silicon was to be less than $10/kg (in 1975 dollars). Summarized in this document are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and government researchers. The silane-production sectionmore » of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot plant stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. Production of very high-purity silane and silicon was demonstrated. Although it has as yet not achieved commercial application, the development of fluidized-bed technology for the low-cost, high-throughput conversion of silane-to-silicon has been demonstrated in the research laboratory and now is in engineering development.« less

Spectroscopic ellipsometry analysis of nanocrystalline silicon carbide obtained at low temperature

NASA Astrophysics Data System (ADS)

Kerdiles, S.; Madelon, R.; Rizk, R.

2001-12-01

Thin films of silicon carbide obtained by hydrogen-reactive magnetron sputtering with various substrate temperatures TS (100-600 °C) were analysed by transmission electron microscopy (TEM) and spectroscopic ellipsometry (SE). The TEM images show evidence of the growth of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) deposited at TS as low as 300 °C, with an average grain size of 4-5 nm. The SE spectra were reproduced by using the Forouhi-Bloomer model and assuming a 7 nm thick overlayer with a void fraction of 45%. The observed increase of the refractive index with TS is assigned to the improvement of both crystallinity and compactness of the layer. The expected increase of the optical gap seems to be offset by the drop of hydrogen content, leaving the gap unchanged. The fabrication and characteristics of nc-SiC:H/c-Si diode are finally described and the data indicate a good rectifying behaviour, together with a low leakage current.

Method for preparing configured silicon carbide whisker-reinforced alumina ceramic articles

DOEpatents

Tiegs, Terry N.

1987-01-01

A ceramic article of alumina reinforced with silicon carbide whiskers suitable for the fabrication into articles of complex geometry are provided by pressureless sintering and hot isostatic pressing steps. In accordance with the method of the invention a mixture of 5 to 10 vol. % silicon carbide whiskers 0.5 to 5 wt. % of a sintering aid such as yttria and the balance alumina powders is ball-milled and pressureless sintered in the desired configuration in the desired configuration an inert atmosphere at a temperature of about 1800.degree. C. to provide a self-supporting configured composite of a density of at least about 94% theoretical density. The composite is then hot isostatically pressed at a temperature and pressure adequate to provide configured articles of at least about 98% of theoretical density which is sufficient to provide the article with sufficient strength and fracture toughness for use in most structural applications such as gas turbine blades, cylinders, and other components of advanced heat engines.

Study of high resistance inorganic coatings on graphite fibers. [for graphite-epoxy composite materials

NASA Technical Reports Server (NTRS)

Galasso, F. S.; Veltri, R. D.; Scola, D. A.

1979-01-01

Coatings made of boron, silicon carbide, silica, and silica-like materials were studied to determine their ability to increase resistance of graphite fibers. The most promising results were attained by chemical vapor depositing silicon carbide on graphite fiber followed by oxidation, and drawing graphite fiber through ethyl silicate followed by appropriate heat treatments. In the silicon carbide coating studies, no degradation of the graphite fibers was observed and resistance values as high as three orders of magnitude higher than that of the uncoated fiber was attained. The strength of a composite fabricated from the coated fiber had a strength which compared favorably with those of composites prepared from uncoated fiber. For the silica-like coated fiber prepared by drawing the graphite fiber through an ethyl silicate solution followed by heating, coated fiber resistances about an order of magnitude greater than that of the uncoated fiber were attained. Composites prepared using these fibers had flexural strengths comparable with those prepared using uncoated fibers, but the shear strengths were lower.

Feasibility of SiC composite structures for 1644 deg gas turbine seal applications

NASA Technical Reports Server (NTRS)

Darolia, R.

1979-01-01

The feasibility of silicon carbide composite structures was evaluated for 1644 K gas turbine seal applications. The silicon carbide composites evaluated consisted of Si/SiC Silcomp (Trademark) - and sintered silicon carbide as substrates, both with attached surface layers containing BN as an additive. A total of twenty-eight candidates with variations in substrate type and density, and layer chemistry, density, microstructure, and thickness were evaluated for abradability, cold particle erosion resistance, static oxidation resistance, ballistic impact resistance, and fabricability. The BN-free layers with variations in density and pore size were later added for evaluation. The most promising candidates were evaluated for Mach 1.0 gas oxidation/erosion resistance from 1477 K to 1644 K. The as-fabricated rub layers did not perform satisfactorily in the gas oxidation/erosion tests. However, preoxidation was found to be beneficial in improving the hot gas erosion resistance. Overall, the laboratory and rig test evaluations show that material properties are suitable for 1477 K gas turbine seal applications.

Simulations of defect spin qubits in piezoelectric semiconductors

NASA Astrophysics Data System (ADS)

Seo, Hosung

In recent years, remarkable advances have been reported in the development of defect spin qubits in semiconductors for solid-state quantum information science and quantum metrology. Promising spin qubits include the nitrogen-vacancy center in diamond, dopants in silicon, and the silicon vacancy and divacancy spins in silicon carbide. In this talk, I will highlight some of our recent efforts devoted to defect spin qubits in piezoelectric wide-gap semiconductors for potential applications in mechanical hybrid quantum systems. In particular, I will describe our recent combined theoretical and experimental study on remarkably robust quantum coherence found in the divancancy qubits in silicon carbide. We used a quantum bath model combined with a cluster expansion method to identify the microscopic mechanisms behind the unusually long coherence times of the divacancy spins in SiC. Our study indicates that developing spin qubits in complex crystals with multiple types of atom is a promising route to realize strongly coherent hybrid quantum systems. I will also discuss progress and challenges in computational design of new spin defects for use as qubits in piezoelectric crystals such as AlN and SiC, including a new defect design concept using large metal ion - vacancy complexes. Our first principles calculations include DFT computations using recently developed self-consistent hybrid density functional theory and large-scale many-body GW theory. This work was supported by the National Science Foundation (NSF) through the University of Chicago MRSEC under Award Number DMR-1420709.

Fibers based on polyethylene with silicon and silicon carbide nanoparticles

NASA Astrophysics Data System (ADS)

Olkhov, A. A.; Krutikova, A. A.; Kovaleva, A. N.; Rychagov, O. V.; Ischenko, A. A.

2017-12-01

In the paper, fibrous materials based on polyethylene with nanosized silicon and silicon carbide obtained by the plasma chemical method have been obtained. The concentration of nanosilicon nanoparticles was 0.1-1.5%. Fibers absorb UV radiation in the range 200-400 nm. The size of silicon nanoparticles and dispersion in fibers are estimated by X-ray diffraction. It is shown that silicon nanoparticles exert no effect on the formation of the internal structure of the PE matrix. The degree of crystallinity, melting and crystallization temperatures remain constant. The surface properties of films are investigated by triboelectric methods and by determining the wetting angle. The surface properties of composite films do not differ from the properties of PE films with the concentration of nanoparticles from 0.1 to 1.0%. At a 1.5% content of n-SiC, the microrelief of the surface changes, and the friction coefficient of the films increases. The resulting films are recommended for application as a UV protective coating.

New trend of radiation application to polymer modification — irradiation in oxygen free atmosphere and at elevated temperature

NASA Astrophysics Data System (ADS)

Seguchi, Tadao

2000-03-01

Polycarbosilane (PCS) fiber as a precursor for ceramic fiber of silicon carbide was cured by electron beam (EB) irradiation under oxygen free atmosphere. Oxygen content in the cured PCS fiber was scarce and the obtained silicon carbide (SiC) fiber with low oxygen content showed high heat resistance up to 1973 K and tensile strength of 3 GPa. Also, the EB cured PCS fiber with very low oxygen content could be converted to silicon nitride (Si 3N 4) fiber by the pyrolysis in NH 3 gas atmosphere, which was the new processing to produce Si 3N 4 fiber. The process of SiC fiber synthesis was developed to the commercial plant. The other application was the crosslinking of polytetrafluoroethylene (PTFE). PTFE, which had been recognized to be a typical chain scission polymer, could be induced to crosslinking by irradiation at the molten state in oxygen free atmosphere. The physical properties such as crystallinity, mechanical properties, etc. changed much by crosslinking, and the radiation resistance was much improved.

Silicon Carbide MOSFET-Based Switching Power Amplifier for Precision Magnet Control

NASA Astrophysics Data System (ADS)

Miller, Kenneth; Ziemba, Timothy; Prager, James; Picard, Julian

2016-10-01

Eagle Harbor Technologies, Inc. (EHT) is using the latest in solid-state switching technologies to advance the state-of-the-art in magnet control for fusion science. Silicon carbide (SiC) MOSFETs offer advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. To validate the design, EHT has developed a low-power switching power amplifier (SPA), which has been used for precision control of magnetic fields, including rapidly changing the fields in coils. This design has been incorporated in to a high power SPA, which has been bench tested. This high power SPA will be tested at the Helicity Injected Torus (HIT) at the University of Washington. Following successful testing, EHT will produce enough SiC MOSFET-based SPAs to replace all of the units at HIT, which allows for higher frequency operation and an overall increase in pulsed current levels.

Determination of the pure silicon monocarbide content of silicon carbide and products based on silicon carbide

NASA Technical Reports Server (NTRS)

Prost, L.; Pauillac, A.

1978-01-01

Experience has shown that different methods of analysis of SiC products give different results. Methods identified as AFNOR, FEPA, and manufacturer P, currently used to detect SiC, free C, free Si, free Fe, and SiO2 are reviewed. The AFNOR method gives lower SiC content, attributed to destruction of SiC by grinding. Two products sent to independent labs for analysis by the AFNOR and FEPA methods showed somewhat different results, especially for SiC, SiO2, and Al2O3 content, whereas an X-ray analysis showed a SiC content approximately 10 points lower than by chemical methods.

Advanced fuels modeling: Evaluating the steady-state performance of carbide fuel in helium-cooled reactors using FRAPCON 3.4

NASA Astrophysics Data System (ADS)

Hallman, Luther, Jr.

Uranium carbide (UC) has long been considered a potential alternative to uranium dioxide (UO2) fuel, especially in the context of Gen IV gas-cooled reactors. It has shown promise because of its high uranium density, good irradiation stability, and especially high thermal conductivity. Despite its many benefits, UC is known to swell at a rate twice that of UO2. However, the swelling phenomenon is not well understood, and we are limited to a weak empirical understanding of the swelling mechanism. One suggested cladding for UC is silicon carbide (SiC), a ceramic that demonstrates a number of desirable properties. Among them are an increased corrosion resistance, high mechanical strength, and irradiation stability. However, with increased temperatures, SiC exhibits an extremely brittle nature. The brittle behavior of SiC is not fully understood and thus it is unknown how SiC would respond to the added stress of a swelling UC fuel. To better understand the interaction between these advanced materials, each has been implemented into FRAPCON, the preferred fuel performance code of the Nuclear Regulatory Commission (NRC); additionally, the material properties for a helium coolant have been incorporated. The implementation of UC within FRAPCON required the development of material models that described not only the thermophysical properties of UC, such as thermal conductivity and thermal expansion, but also models for the swelling, densification, and fission gas release associated with the fuel's irradiation behavior. This research is intended to supplement ongoing analysis of the performance and behavior of uranium carbide and silicon carbide in a helium-cooled reactor.

Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide

NASA Astrophysics Data System (ADS)

Wang, Junfeng; Zhou, Yu; Zhang, Xiaoming; Liu, Fucai; Li, Yan; Li, Ke; Liu, Zheng; Wang, Guanzhong; Gao, Weibo

2017-06-01

Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single-photon emission, good photostability, and long spin-coherence time even at room temperature. As compared to diamond, which is widely used for hosting nitrogen-vacancy centers, silicon carbide has an advantage in terms of large-scale, high-quality, and low-cost growth, as well as an advanced fabrication technique in optoelectronics, leading to prospects for large-scale quantum engineering. In this paper, we report an experimental demonstration of the generation of a single-photon-emitter array through ion implantation. VSi defects are generated in predetermined locations with high generation efficiency (approximately 19 % ±4 % ). The single emitter probability reaches approximately 34 % ±4 % when the ion-implantation dose is properly set. This method serves as a critical step in integrating single VSi defect emitters with photonic structures, which, in turn, can improve the emission and collection efficiency of VSi defects when they are used in a spin photonic quantum network. On the other hand, the defects are shallow, and they are generated about 40 nm below the surface which can serve as a critical resource in quantum-sensing applications.

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

PubMed Central

Salah, Tarek Ben; Khachroumi, Sofiane; Morel, Hervé

2010-01-01

Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon), permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET) as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned. PMID:22315547

Silicon Carbide Mixers Demonstrated to Improve the Interference Immunity of Radio-Based Aircraft Avionics

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Concern over the interference of stray radiofrequency (RF) emissions with key aircraft avionics is evident during takeoff and landing of every commercial flight when the flight attendant requests that all portable electronics be switched off. The operation of key radio-based avionics (such as glide-slope and localizer approach instruments) depends on the ability of front-end RF receivers to detect and amplify desired information signals while rejecting interference from undesired RF sources both inside and outside the aircraft. Incidents where key navigation and approach avionics malfunction because of RF interference clearly represent an increasing threat to flight safety as the radio spectrum becomes more crowded. In an initial feasibility experiment, the U.S. Army Research Laboratory and the NASA Lewis Research Center recently demonstrated the strategic use of silicon carbide (SiC) semiconductor components to significantly reduce the susceptibility of an RF receiver circuit to undesired RF interference. A pair of silicon carbide mixer diodes successfully reduced RF interference (intermodulation distortion) in a prototype receiver circuit by a factor of 10 (20 dB) in comparison to a pair of commercial silicon-based mixer diodes.

Preparation of magnesium metal matrix composites by powder metallurgy process

NASA Astrophysics Data System (ADS)

Satish, J.; Satish, K. G., Dr.

2018-02-01

Magnesium is the lightest metal used as the source for constructional alloys. Today Magnesium based metal matrix composites are widely used in aerospace, structural, oceanic and automobile applications for its light weight, low density(two thirds that of aluminium), good high temperature mechanical properties and good to excellent corrosion resistance. The reason of designing metal matrix composite is to put in the attractive attributes of metals and ceramics to the base metal. In this study magnesium metal matrix hybrid composite are developed by reinforcing pure magnesium with silicon carbide (SiC) and aluminium oxide by method of powder metallurgy. This method is less expensive and very efficient. The Hardness test was performed on the specimens prepared by powder metallurgy method. The results revealed that the micro hardness of composites was increased with the addition of silicon carbide and alumina particles in magnesium metal matrix composites.

Space qualification of silicon carbide for mirror applications: progress and future objectives

NASA Astrophysics Data System (ADS)

Palusinski, Iwona A.; Ghozeil, Isaac

2006-09-01

Production of optical silicon carbide (SiC) for mirror applications continues to evolve and there are renewed plans to use this material in future space-based systems. While SiC has the potential for rapid and cost-effective manufacturing of large, lightweight, athermal optical systems, this material's use in mirror applications is relatively new and has limited flight heritage. This combination of drivers stresses the necessity for a space qualification program for this material. Successful space qualification will require independent collaboration to absorb the high cost of executing this program while taking advantage of each contributing group's laboratory expertise to develop a comprehensive SiC database. This paper provides an overview of the trends and progress in the production of SiC, and identifies future objectives such as non-destructive evaluation and space-effects modeling to ensure proper implementation of this material into future space-based systems.

A review on single photon sources in silicon carbide.

PubMed

Lohrmann, A; Johnson, B C; McCallum, J C; Castelletto, S

2017-03-01

This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

Preparation of uranium fuel kernels with silicon carbide nanoparticles using the internal gelation process

NASA Astrophysics Data System (ADS)

Hunt, R. D.; Silva, G. W. C. M.; Lindemer, T. B.; Anderson, K. K.; Collins, J. L.

2012-08-01

The US Department of Energy continues to use the internal gelation process in its preparation of tristructural isotropic coated fuel particles. The focus of this work is to develop uranium fuel kernels with adequately dispersed silicon carbide (SiC) nanoparticles, high crush strengths, uniform particle diameter, and good sphericity. During irradiation to high burnup, the SiC in the uranium kernels will serve as getters for excess oxygen and help control the oxygen potential in order to minimize the potential for kernel migration. The hardness of SiC required modifications to the gelation system that was used to make uranium kernels. Suitable processing conditions and potential equipment changes were identified so that the SiC could be homogeneously dispersed in gel spheres. Finally, dilute hydrogen rather than argon should be used to sinter the uranium kernels with SiC.

Closed-cycle hydrogen-fueled engine

NASA Technical Reports Server (NTRS)

Laumann, E. A.; Reynolds, R. K.

1977-01-01

Innovation avoids pollution by retaining combustion products. Potential uses include applicability to pollution-free powerplant using intermittent solar energy. Engine parts are fabricated from silicon carbide, silicon nitride, stainless steel, and other high-tensile strength materials.

Gibbs free energy of reactions involving SiC, Si3N4, H2, and H2O as a function of temperature and pressure

NASA Technical Reports Server (NTRS)

Isham, M. A.

1992-01-01

Silicon carbide and silicon nitride are considered for application as structural materials and coating in advanced propulsion systems including nuclear thermal. Three-dimensional Gibbs free energy were constructed for reactions involving these materials in H2 and H2/H2O. Free energy plots are functions of temperature and pressure. Calculations used the definition of Gibbs free energy where the spontaneity of reactions is calculated as a function of temperature and pressure. Silicon carbide decomposes to Si and CH4 in pure H2 and forms a SiO2 scale in a wet atmosphere. Silicon nitride remains stable under all conditions. There was no apparent difference in reaction thermodynamics between ideal and Van der Waals treatment of gaseous species.

Simple method for the growth of 4H silicon carbide on silicon substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asghar, M.; Shahid, M. Y.; Iqbal, F.

In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C{sub 60} powder of high purity (99.99%) was evaporated from molybdenum boat. The as grown film was characterized by XRD, FTIR, UV-Vis Spectrophotometer and Hall Measurements. The XRD pattern displayed four peaks at 2Θ angles 28.55{sup 0}, 32.70{sup 0}, 36.10{sup 0} and 58.90{sup 0} related to Si (1 1 1), 4H-SiC (1 0 0), 4H-SiC (1 1 1) and 4H-SiC (2 2 2), respectively. FTIR, UV-Vis spectrophotometer and electrical properties further strengthenedmore » the 4H-SiC growth.« less

Design, fabrication, and characterization of 4H-silicon carbide rectifiers for power switching applications

NASA Astrophysics Data System (ADS)

Sheridan, David Charles

Silicon Carbide has received a substantial increase in research interest over the past few years as a base material system for high-frequency and high-power semiconductor devices. Of the over 1200 polytypes, 4H-SiC is the most attractive polytype for power devices due to its wide band gap (3.2eV), excellent thermal conductivity (4.9 W/cm·K), and high critical field strength (˜2 x 106 V/cm). Important for power devices, the 10x increase in critical field strength of SiC allows high voltage blocking layers to be fabricated significantly thinner than for comparable Si devices. For power rectifiers, this reduces device on-resistance, while maintaining the same high voltage blocking capability. In this work, 4H-SiC Schottky, pn, and junction barrier Schottky (JBS) rectifiers for use in high voltage switching applications have been designed, fabricated, and extensively characterized. First, a detailed review of 4H-SiC material parameters was performed and SiC models were implemented into a standard Si drift-diffusion numerical simulator. Using these models, a SiC simulation methodology was developed in order to enable predictive SiC device design. A wide variety of rectifier and edge termination designs were investigated and optimized with respect to breakdown efficiency, area consumption, resistance to interface charge, and fabrication practicality. Simulated termination methods include: field plates, floating guard rings, and a variety of junction termination extensions (JTE). Using the device simulation results, both Schottky and JBS rectifiers were fabricated with a novel self-aligned edge termination design, and fabricated with process elements developed at the Alabama Microelectronics Science and Technology Center facility. These rectifiers exhibited near-ideal forward characteristics and had blocking voltages in excess of 2.5kV. The SiC diodes were subjected to inductive switching tests, and were found to have superior reverse recovery characteristics compared to a similar Si diode. Finally, the performance of these SiC rectifiers were tested in inductive switching circuits and in high dose gamma radiation environments. In both cases, these devices were shown to be superior to their silicon counterparts. The details of this work was presented and published in the proceedings of the 45th International Meeting of the American Vacuum Society [1], the 1999 International Conference on Silicon Carbide and Related Materials [2, 3] and the 2000 European Conference on Silicon Carbide and Related Materials [4]. The expanded conference papers were published in the international journal. Solid-State Electronics [5, 6].

Methylhydridopolysilazane and its Pyrolytic Conversion to Si3N4/SiC Ceramics

DTIC Science & Technology

1993-04-20

development of inorganic and organometallic polymers as preceramic materials for the synthesis of silicon carbide ( SiC ) and silicon nitride (Si 3N 4...disproportionation in the pyrolysis of preceramic polymers . The lack of a -50 ppm resonance in the CP-MAS NMR spectra of the MHPS systems is 12...1992); Chem. Abstr. 1992, 116, 220226g. 6. (a) Semen, J.; Loop, J.G., "A Preceramic Polymer Route to Molded SiC Ceramic Parts," Ceram. Eng. Sci. Proc

Multifunctional Ceramic Nanostructured Coatings

DTIC Science & Technology

2010-12-01

silicon carbide composites // J. Europ. Cer. Soc. − 2004. − Vol. 24. − P. 2169−2179. 22. Yu. P. Udalov, E. E. Valova, S. S. Ordanian. Fabrication and...by the titanium and tungsten borides and carbides . The analysis was done using the X-ray and electron-optical methods. This information expands our...coating compositions should be based on limited solubility materials. Such systems include carbides , nitrides, borides and silicides based on

Occurrence of spherical ceramic debris in indentation and sliding contact

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1982-01-01

Indenting experiments were conducted with the silicon carbide (0001) surface in contact with a spherical diamond indenter in air. Sliding friction experiments were also conducted with silicon carbide in contact with iron and iron-based binary alloys at room temperature and 800 C. Fracture pits with a spherical particle and spherical wear debris were observed as a result of indenting and sliding. Spherical debris may be produced by a mechanism that involves a spherical-shaped fracture along the circular or spherical stress trajectories under the inelastic deformation zone.

The toxicity, in vitro, of silicon carbide whiskers.

PubMed

Vaughan, G L; Jordan, J; Karr, S

1991-10-01

To mouse cells in culture, SiC whiskers (SiCW) and asbestos are similarly cytotoxic, disrupting cell membranes and killing cells. Both shorten cell generation time, increase the rate of DNA synthesis, increase total cell DNA content, and cause a loss in growth control often associated with malignant cellular transformation. Within the narrow size range of materials examined, the amount of damage appeared to be more a function of the number of whiskers present than of their size. Silicon carbide whiskers, if mishandled, may pose a serious health hazard to humans.

Corrosion of SiC by Molten Salt

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Smialek, James L.

1987-01-01

Advanced ceramic materials considered for wide range of applications as in gas turbine engines and heat exchangers. In such applications, materials may be in corrosive environments that include molten salts. Very corrosive to alloys. In order to determine extent of problem for ceramic materials, corrosion of SiC by molten salts studied in both jet fuel burners and laboratory furnaces. Surface of silicon carbide corroded by exposure to flame seeded with 4 parts per million of sodium. Strength of silicon carbide decreased by corrosion in flame and tube-furnace tests.

Microstructural analysis of W-SiCf/SiC composite

NASA Astrophysics Data System (ADS)

Yoon, Hanki; Oh, Jeongseok; Kim, Gonho; Kim, Hyunsu; Takahashi, Heishichiro; Kohyama, Akira

2015-03-01

Continuous silicon carbide fiber-reinforced silicon carbide (SiCf/SiC) composites are promising structure candidates for future fusion power systems such as gas coolant fast channels, extreme high temperature reactor and fusion reactors, because of their intrinsic properties such as excellent mechanical properties, high thermal conductivity, good thermal-shock resistance as well as excellent physical and chemical stability in various environments under elevated temperature conditions. In this study, bonding of tungsten and SiCf/SiC was produced by hot-press method. Microstructure analyses were performed using SEM and TEM.

Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon Dioxide

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Nguyen, QuynhGiao N.

1998-01-01

Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.

Dual ohmic contact to N- and P-type silicon carbide

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2013-01-01

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Challenges and Opportunities in Design, Fabrication, and Testing of High Temperature Joints in Ceramics and Ceramic Composites

NASA Technical Reports Server (NTRS)

Singh, M.; Levine, S. R. (Technical Monitor)

2001-01-01

Ceramic joining has been recognized as an enabling technology for successful utilization of advanced ceramics and composite materials. A number of joint design and testing issues have been discussed for ceramic joints in silicon carbide-based ceramics and fiber-reinforced composites. These joints have been fabricated using an affordable, robust ceramic joining technology (ARCJoinT). The microstructure and good high temperature mechanical capability (compressive and flexural strengths) of ceramic joints in silicon carbide-based ceramics and composite materials are reported.

Bibliography on Ceramic Matrix Composites and Reinforcing Whiskers, Platelets, and Fibers, 1970-1990

DTIC Science & Technology

1993-08-01

Ballistic A Study of the Critical Factors Controlling the Impact on Three Composite Ceramics Synthesis of Ceramic Matrix Composites from Snedeker, R. S...1.2.1.55 1.22.2 Mechanical and Structural Characterize’ion of Oxidation Kinetics of Silicon Carbide Whiskers the Nicalon Silicon Carbide Fibre Studied by X...Powders and Whiskers: An XPS Study 9 (10), 1218-20, Oct 1990 Taylor, T. N. (AD D250 694) J. Mater. Res. 4 (1), 189-203, Jan-Feb 1989 1.2.2.11 (AD D250 571

High temperature surface effects of He + implantation in ICF fusion first wall materials

NASA Astrophysics Data System (ADS)

Zenobia, Samuel J.; Radel, R. F.; Cipiti, B. B.; Kulcinski, Gerald L.

2009-06-01

The first wall armor of the inertial confinement fusion reactor chambers must withstand high temperatures and significant radiation damage from target debris and neutrons. The resilience of multiple materials to one component of the target debris has been investigated using energetic (20-40 keV) helium ions generated in the inertial electrostatic confinement device at the University of Wisconsin. The materials studied include: single-crystalline, and polycrystalline tungsten, tungsten-coated tantalum-carbide 'foams', tungsten-rhenium alloy, silicon carbide, carbon-carbon velvet, and tungsten-coated carbon-carbon velvet. Steady-state irradiation temperatures ranged from 750 to 1250 °C with helium fluences between 5 × 10 17 and 1 × 10 20 He +/cm 2. The crystalline, rhenium alloyed, carbide foam, and powder metallurgical tungsten specimens each experienced extensive pore formation after He + irradiation. Flaking and pore formation occurred on silicon carbide samples. Individual fibers of carbon-carbon velvet specimens sustained erosion and corrugation, in addition to the roughening and rupturing of tungsten coatings after helium ion implantation.

Improved silicon carbide for advanced heat engines

NASA Technical Reports Server (NTRS)

Whalen, Thomas J.

1987-01-01

This is the second annual technical report entitled, Improved Silicon Carbide for Advanced Heat Engines, and includes work performed during the period February 16, 1986 to February 15, 1987. The program is conducted for NASA under contract NAS3-24384. The objective is the development of high strength, high reliability silicon carbide parts with complex shapes suitable for use in advanced heat engines. The fabrication methods used are to be adaptable for mass production of such parts on an economically sound basis. Injection molding is the forming method selected. This objective is to be accomplished in a two-phase program: (1) to achieve a 20 percent improvement in strength and a 100 percent increase in Weibull modulus of the baseline material; and (2) to produce a complex shaped part, a gas turbine rotor, for example, with the improved mechanical properties attained in the first phase. Eight tasks are included in the first phase covering the characterization of the properties of a baseline material, the improvement of those properties and the fabrication of complex shaped parts. Activities during the first contract year concentrated on two of these areas: fabrication and characterization of the baseline material (Task 1) and improvement of material and processes (Task 7). Activities during the second contract year included an MOR bar matrix study to improve mechanical properties (Task 2), materials and process improvements (Task 7), and a Ford-funded task to mold a turbocharger rotor with an improved material (Task 8).

Improved silicon carbide for advanced heat engines

NASA Technical Reports Server (NTRS)

Whalen, Thomas J.

1988-01-01

This is the third annual technical report for the program entitled, Improved Silicon Carbide for Advanced Heat Engines, for the period February 16, 1987 to February 15, 1988. The objective of the original program was the development of high strength, high reliability silicon carbide parts with complex shapes suitable for use in advanced heat engines. Injection molding is the forming method selected for the program because it is capable of forming complex parts adaptable for mass production on an economically sound basis. The goals of the revised program are to reach a Weibull characteristic strength of 550 MPa (80 ksi) and a Weibull modulus of 16 for bars tested in 4-point loading. Two tasks are discussed: Task 1 which involves materials and process improvements, and Task 2 which is a MOR bar matrix to improve strength and reliability. Many statistically designed experiments were completed under task 1 which improved the composition of the batches, the mixing of the powders, the sinter and anneal cycles. The best results were obtained by an attritor mixing process which yielded strengths in excess of 550 MPa (80 ksi) and an individual Weibull modulus of 16.8 for a 9-sample group. Strengths measured at 1200 and 1400 C were equal to the room temperature strength. Annealing of machined test bars significantly improved the strength. Molding yields were measured and flaw distributions were observed to follow a Poisson process. The second iteration of the Task 2 matrix experiment is described.

Union Carbide Corp. polysilicon status and plans

NASA Technical Reports Server (NTRS)

Leipold, M. H.

1982-01-01

The status of polysilicon activities is summarized highlighted by moving the silane portion of the experimental process system development unit (EPSDU) to Washougal, Washington. The completion and operation of the silane EPSDU, is discussed along with research on the silane-to-silicon deposition process. Progress on the dichlorosilane process is also reported.

Characterization of a-SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x-ray mask application

NASA Astrophysics Data System (ADS)

Jean, A.; Chaker, M.; Diawara, Y.; Leung, P. K.; Gat, E.; Mercier, P. P.; Pépin, H.; Gujrathi, S.; Ross, G. G.; Kieffer, J. C.

1992-10-01

Hydrogenated amorphous a-SixC1-x:H films with various compositions (0.2≤x≤0.8) were prepared by a radio frequency (rf 100 kHz) glow discharge decomposition of a silane and methane mixture diluted in argon. The deposition system used was a commercially available plasma enhanced chemical vapor deposition reactor allowing a high throughput (22 wafers of 4 in. diameter each run). The properties of the films such as thickness, density, and stress were investigated. The composition, including hydrogen content and Si/C ratio, and the structure of the films were systematically examined by means of several diagnostics including electron recoil detection, x-ray photoelectron spectroscopy, and infrared (IR) absorption analysis. Thickness and density of the films were dependent on the film composition, while the stress of the films was highly compressive (3×109-1×1010 dynes/cm2). Density was about 2.4 g/cm3 for nearly stoichiometric SiC films. The hydrogen content of the films was practically constant at 27 at. % over the whole investigated composition range. The IR analyses suggested that the structure of the silicon carbide films is inorganic-like over the whole range of compositions. From stoichiometric to carbon-rich films, the structure mainly consists of a tetrahedral network where silicon atoms are randomly replaced by carbon atoms and one hydrogen atom is bonded to silicon (SiH group). However, the presence of SiH2 groups and microvoids was observed in the structure of Si-rich silicon carbide films. Finally, the development of SiC membranes for x-ray lithography was presented including the control of film stress by means of rapid thermal annealing. Silicon carbide membranes of relatively high surface area (32×32 mm2) and showing high optical transparency (80%) were successfully fabricated.

Sensors for ceramic components in advanced propulsion systems

NASA Technical Reports Server (NTRS)

Koller, A. C.; Bennethum, W. H.; Burkholder, S. D.; Brackett, R. R.; Harris, J. P.

1995-01-01

This report includes: (1) a survey of the current methods for the measurement of surface temperature of ceramic materials suitable for use as hot section flowpath components in aircraft gas turbine engines; (2) analysis and selection of three sensing techniques with potential to extend surface temperature measurement capability beyond current limits; and (3) design, manufacture, and evaluation of the three selected techniques which include the following: platinum rhodium thin film thermocouple on alumina and mullite substrates; doped silicon carbide thin film thermocouple on silicon carbide, silicon nitride, and aluminum nitride substrates; and long and short wavelength radiation pyrometry on the substrates listed above plus yttria stabilized zirconia. Measurement of surface emittance of these materials at elevated temperature was included as part of this effort.

Strengthening of oxidation resistant materials for gas turbine applications

NASA Technical Reports Server (NTRS)

Platts, D. R.; Kirchner, H. P.; Gruver, R. M.

1972-01-01

Compressive surface layers were formed on hot-pressed silicon carbide and nitride. The objective of these treatments was to improve the impact resistance of these materials at 1590 K (2400 F). Quenching was used to form compressive surface layers on silicon carbide. The presence of the compressive stresses was demonstrated by slotted rod tests. Compressive stresses were retained at elevated temperatures. Improvements in impact resistance at 1590 K (2400 F) and flexural strength at room temperature were achieved using cylindrical rods 3.3 mm (0.13 in.) in diameter. Carburizing treatments were used to form the surface layers on silicon nitride. In a few cases using rectangular bars improvements in impact resistance at 1590 K (2400 F) were observed.

Electric measurements of PV heterojunction structures a-SiC/c-Si

NASA Astrophysics Data System (ADS)

Perný, Milan; Šály, Vladimír; Janíček, František; Mikolášek, Miroslav; Váry, Michal; Huran, Jozef

2018-01-01

Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared a-SiC/c-Si structures. We have investigated the influence of methane content in deposition gas mixture and different electrode configuration.

Locking of electron spin coherence above 20 ms in natural silicon carbide

NASA Astrophysics Data System (ADS)

Simin, D.; Kraus, H.; Sperlich, A.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

2017-04-01

We demonstrate that silicon carbide (SiC) with a natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over an unexpectedly long time exceeding 20 ms. The spin-locked subspace with a drastically reduced decoherence rate is attained through the suppression of heteronuclear spin crosstalking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. Furthermore, we identify several phonon-assisted mechanisms of spin-lattice relaxation and find that it can be extremely long at cryogenic temperatures, equal to or even longer than 10 s. Our approach may be extended to other polyatomic compounds and opens a path towards improved qubit memory for wafer-scale quantum technologies.

.beta.-silicon carbide protective coating and method for fabricating same

DOEpatents

Carey, Paul G.; Thompson, Jesse B.

1994-01-01

A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or .mu.c-SiC film on the surface and produce .beta.--SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface.

Application of surface analysis to solve problems of wear

NASA Technical Reports Server (NTRS)

Buckley, D. H.

1981-01-01

Results are presented for the use of surface analytical tools including field ion microscopy, Auger emission spectroscopy analysis (AES), cylindrical mirror Auger analysis and X-ray photoelectron spectroscopy (XPS). Data from the field ion microscope reveal adhesive transfer (wear) at the atomic level with the formation of surface compounds not found in the bulk, and AES reveals that this transfer will occur even in the presence of surface oxides. Both AES and XPS reveal that in abrasive wear with silicon carbide and diamond contacting the transition metals, the surface and the abrasive undergo a chemical or structural change which effects wear. With silicon carbide, silicon volatilizes leaving behind a pseudo-graphitic surface and the surface of diamond is observed to graphitize.

Specific features of the current–voltage characteristics of SiO{sub 2}/4H-SiC MIS structures with phosphorus implanted into silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhaylova, A. I., E-mail: m.aleksey.spb@gmail.com; Afanasyev, A. V.; Ilyin, V. A.

The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO{sub 2} interface and in the bulk of silicon dioxide.

Infrapopliteal stenting with silicon carbide-coated stents in critical limb ischemia: a 12 month follow-up study.

PubMed

Atar, Eli; Avrahami, Ram; Koganovich, Yuri; Litvin, Sergey; Knizhnik, Michael; Belenky, Alexander

2009-10-01

Critical limb ischemia is an increasingly common condition that has high surgical morbidity and limited non-surgical options. To evaluate the use of silicon carbide-coated Motion stents, as compared to reported data for bare metal stents, in elderly patients with infrapopliteal artery stenoses causing critical limb ischemia after failed or complicated percutaneous transluminal angioplasty. Between January 2003 and March 2004, 41 stents were inserted into 17 consecutive patients (11 males, 6 females, mean age 82 years, range 75-93) following unsuccessful or complicated PTA. Seven patients had one-vessel run-off, six had two-vessel and four had three vessel run-off. All patients suffered from CLI, had up to three lesions and more than one co-morbid condition, and were considered at high surgical risk. Silicon carbide-coated Motion coronary stents, 2.5-4 mm diameterand 25 and 30 mm length, were used. Pre-intervention assessment included clinical condition, ankle brachial index, Doppler ultrasound and digital subtracted angiography. Postintervention evaluation included clinical condition, ABI and Doppler ultrasound at 3, 6 and 12 months. The technical success rate per lesion was 100% (41/41). Two patients died of unrelated causes after 2 and 8 months respectively. Primary patency rates with duplex ultrasound were 68.7% (11/16) at 3 months, 43.7% (7/16) at 6 months and 40% (6/15) after 12 months. Nine patients developed complete occlusion in 13 stents; three of these patients underwent a below-knee amputation and two patients a partial foot amputation. Re-intervention (PTA only) was performed in 7 patients (43.7%). Secondary patency rate was 81.2% (13/16) at 6 months and 60% (9/15) at one year. Mean ABI index had improved at 6 months from 0.32 to 0.67, and to 0.53 at one year. Clinical improvement was evident in 87.5% (14/16) at 6 months and in 66.6% (10/15) at one year. Silicon carbide-coated stents are comparable to bare metal stents after 6 and 12 months in infrapopliteal interventions in CLI when stenting is indicated.

SiC vs. Si for High Radiation Environments: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

NASA Technical Reports Server (NTRS)

Harris, Richard D.

2008-01-01

Commercial silicon carbide and silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. Changes in forward bias I-V characteristics are reported for fluences up to 4 x 10(exp 14) p/cm2. For devices of both material types, the series resistance is observed to increase as the fluence increases. The changes in series resistance result from changes in the free carrier concentration due to carrier removal by the defects produced. A simple model is presented that allows calculation of the series resistance of the device and then relates the carrier removal rate to the changes in series resistance. Using this model to calculate the carrier removal rate in both materials reveals that the carrier removal rate in silicon is less than that in silicon carbide, indicating that silicon is the more radiation tolerant material.

Optical substrate materials for synchrotron radiation beamlines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Howells, M.R.; Paquin, R.A.

1997-06-01

The authors consider the materials choices available for making optical substrates for synchrotron radiation beam lines. They find that currently the optical surfaces can only be polished to the required finish in fused silica and other glasses, silicon, CVD silicon carbide, electroless nickel and 17-4 PH stainless steel. Substrates must therefore be made of one of these materials or of a metal that can be coated with electroless nickel. In the context of material choices for mirrors they explore the issues of dimensional stability, polishing, bending, cooling, and manufacturing strategy. They conclude that metals are best from an engineering andmore » cost standpoint while the ceramics are best from a polishing standpoint. They then give discussions of specific materials as follows: silicon carbide, silicon, electroless nickel, Glidcop{trademark}, aluminum, precipitation-hardening stainless steel, mild steel, invar and superinvar. Finally they summarize conclusions and propose ideas for further research.« less

DOE/JPL advanced thermionic technology program

NASA Technical Reports Server (NTRS)

1979-01-01

Progress made in different tasks of the advanced thermionic technology program is described. The tasks include surface and plasma investigations (surface characterization, spectroscopic plasma experiments, and converter theory); low temperature converter development (tungsten emitter, tungsten oxide collector and tungsten emitter, nickel collector); component hardware development (hot shell development); flame-fired silicon carbide converters; high temperature and advanced converter studies; postoperational diagnostics; and correlation of design interfaces.

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

NASA Technical Reports Server (NTRS)

Chen, Liang-yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2016-01-01

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

Electric Plasma Arc-Lamp Combustor Liner Durability Test System Developed

NASA Technical Reports Server (NTRS)

Goldsby, Jon C.; Halbig, Michael C.

2000-01-01

Silicon carbide matrix composites are candidate materials for high-temperature combustor liners. Because through-the-thickness thermal gradients are the primary cause of stress on combustor liners, a unique test facility was developed at the NASA Glenn Research Center at Lewis Field to simulate in-service pure thermal stress distributions in fiber reinforced silicon carbide cylinders. It was developed initially under Phase II of the High- Speed Research Program. This test stand can accommodate 8-in.-long test cylinders that have outer diameters of 4 in. and a wall thickness of about 0.08 to 0.12 in. One cylinder at a time is loaded vertically into the test stand. Water-cooled plates enclose the open ends of the cylinder and provide cooling. Load plates on the exterior side of the water-cooled plates provide support and compression loads. To evaluate a combustor liner material s potential performance, researchers induce thermal gradients with an axisymmetric, direct-current, electric arc within the cylinder while refrigerated air at a rate of 1.5 lb/sec impinges on the outside surface of the cylinder. The achievable through-the-thickness thermal gradient is predicted to be in excess of 200 C. The 8-in. long, 0.5-in.-diameter plasma arc emits full spectrum visible light; radiant intensity exceeds 300 Watts per square centimeters to produce temperatures in excess of 1500 C on materials with emissivity near unity. Because the system does not rely upon the combustion of fuels to achieve the related thermal conditions, ancillary environmental reactions with the sample are eliminated. The system incorporates a standard mechanical test frame, which can impose constant as well cyclical axial stresses up to 2200 lb upon the test piece. Silicon-carbide-fiber reinforced silicon carbide matrix composite cylinders were instrumented with thin-film thermocouples to obtain through-the-thickness thermal flux measurements. Inside wall temperatures reached 1200 C with only 250 A of current. One of the special features of this configuration is the creation of hoop stress states within the cylinder, which up this point have not been obtainable in planar coupon tests. This facility will allow various operational modes, including accelerated tests of thermal transients simulating the effects of repeated engine ignition as well as prescribed thermal and mechanical histories to simulate various duty cycle profiles. Tests can now be performed on thermal-barrier-coated metallic liners and ceramic composite liners that require a combination of high heat flux and controlled mechanical stresses.

Assessment of a New Silicon Carbide Tubular Honeycomb Membrane for Treatment of Olive Mill Wastewaters

PubMed Central

Fraga, Maria C.; Sanches, Sandra; Crespo, João G.; Pereira, Vanessa J.

2017-01-01

Extremely high removals of total suspended solids and oil and grease were obtained when olive mill wastewaters were filtered using new silicon carbide tubular membranes. These new membranes were used at constant permeate flux to treat real olive mill wastewaters at pilot scale. The filtration conditions were evaluated and optimized in terms of the selection of the permeate flux and flux maintenance strategies employed—backpulsing and backwashing—in order to reduce fouling formation. The results obtained reveal that the combination of backpulses and backwashes helps to maintain the permeate flux, avoids transmembrane pressure increase and decreases the cake resistance. Moreover, membrane cleaning procedures were compared and the main agents responsible for fouling formation identified. Results also show that, under total recirculation, despite an increased concentration of pollutants in the feed stream, the quality of the permeate is maintained. Membrane filtration using silicon carbide membranes is an effective alternative to dissolved air flotation and can be applied efficiently to remove total suspended solids and oil and grease from olive mill wastewaters. PMID:28264453

Assessment of a New Silicon Carbide Tubular Honeycomb Membrane for Treatment of Olive Mill Wastewaters.

PubMed

Fraga, Maria C; Sanches, Sandra; Crespo, João G; Pereira, Vanessa J

2017-02-27

Extremely high removals of total suspended solids and oil and grease were obtained when olive mill wastewaters were filtered using new silicon carbide tubular membranes. These new membranes were used at constant permeate flux to treat real olive mill wastewaters at pilot scale. The filtration conditions were evaluated and optimized in terms of the selection of the permeate flux and flux maintenance strategies employed-backpulsing and backwashing-in order to reduce fouling formation. The results obtained reveal that the combination of backpulses and backwashes helps to maintain the permeate flux, avoids transmembrane pressure increase and decreases the cake resistance. Moreover, membrane cleaning procedures were compared and the main agents responsible for fouling formation identified. Results also show that, under total recirculation, despite an increased concentration of pollutants in the feed stream, the quality of the permeate is maintained. Membrane filtration using silicon carbide membranes is an effective alternative to dissolved air flotation and can be applied efficiently to remove total suspended solids and oil and grease from olive mill wastewaters.

Method for fracturing silicon-carbide coatings on nuclear-fuel particles

DOEpatents

Turner, Lloyd J.; Willey, Melvin G.; Tiegs, Sue M.; Van Cleve, Jr., John E.

1982-01-01

This invention is a device for fracturing particles. It is designed especially for use in "hot cells" designed for the handling of radioactive materials. In a typical application, the device is used to fracture a hard silicon-carbide coating present on carbon-matrix microspheres containing nuclear-fuel material, such as uranium or thorium compounds. To promote remote control and facilitate maintenance, the particle breaker is pneumatically operated and contains no moving parts. It includes means for serially entraining the entrained particles on an anvil housed in a leak-tight chamber. The flow rate of the gas is at a value effecting fracture of the particles; preferably, it is at a value fracturing them into product particulates of fluidizable size. The chamber is provided with an outlet passage whose cross-sectional area decreases in the direction away from the chamber. The outlet is connected tangentially to a vertically oriented vortex-flow separator for recovering the product particulates entrained in the gas outflow from the chamber. The invention can be used on a batch or continuous basis to fracture the silicon-carbide coatings on virtually all of the particles fed thereto.

Device for fracturing silicon-carbide coatings on nuclear-fuel particles

DOEpatents

Turner, L.J.; Willey, M.G.; Tiegs, S.M.; Van Cleve, J.E. Jr.

This invention is a device for fracturing particles. It is designed especially for use in hot cells designed for the handling of radioactive materials. In a typical application, the device is used to fracture a hard silicon-carbide coating present on carbon-matrix microspheres containing nuclear-fuel materials, such as uranium or thorium compounds. To promote remote control and facilitate maintenance, the particle breaker is pneumatically operated and contains no moving parts. It includes means for serially entraining the entrained particles on an anvil housed in a leak-tight chamber. The flow rate of the gas is at a value effecting fracture of the particles; preferably, it is at a value fracturing them into product particulates of fluidizable size. The chamber is provided with an outlet passage whose cross-sectional area decreases in the direction away from the chamber. The outlet is connected tangentially to a vertically oriented vortex-flow separator for recovering the product particulates entrained in the gas outflow from the chamber. The invention can be used on a batch or continuous basis to fracture the silicon-carbide coatings on virtually all of the particles fed thereto.

Ceramic-bonded abrasive grinding tools

DOEpatents

Holcombe, C.E. Jr.; Gorin, A.H.; Seals, R.D.

1994-11-22

Abrasive grains such as boron carbide, silicon carbide, alumina, diamond, cubic boron nitride, and mullite are combined with a cement primarily comprised of zinc oxide and a reactive liquid setting agent and solidified into abrasive grinding tools. Such grinding tools are particularly suitable for grinding and polishing stone, such as marble and granite.

Ceramic-bonded abrasive grinding tools

DOEpatents

Holcombe, Jr., Cressie E.; Gorin, Andrew H.; Seals, Roland D.

1994-01-01

Abrasive grains such as boron carbide, silicon carbide, alumina, diamond, cubic boron nitride, and mullite are combined with a cement primarily comprised of zinc oxide and a reactive liquid setting agent and solidified into abrasive grinding tools. Such grinding tools are particularly suitable for grinding and polishing stone, such as marble and granite.

Interface reactions between silicon carbide and interlayers in silicon carbide copper metal matrix composites

NASA Astrophysics Data System (ADS)

Köck, T.; Brendel, A.; Bolt, H.

2007-05-01

Novel copper matrix composites reinforced with silicon carbide fibres are considered as a new generation of heat sink materials for the divertor of future fusion reactors. The divertor is exposed to intense particle bombardment and heat loads of up to 15 MW m-2. This component consists of the plasma-facing material which is bonded to the actively cooled heat sink. Due to its high thermal conductivity of about 400 W m-1 K-1 copper is a promising material for the heat sink. To increase the mechanical properties of copper at working temperature (823 K), silicon carbide fibres with a diameter of 140 μm are used to reinforce the interface area between the plasma-facing material and the heat sink. Push-out tests show that the adhesion between SiC fibre and Cu matrix without any interlayer is very low. To increase the fibre-matrix bonding the fibres are coated with Cr and W with a thickness of 300-400 nm before Cu deposition by magnetron sputtering. Push-out tests on these modified fibres show a significant increase in adhesion compared to the fibres without interlayer. XRD investigations after a heat treatment at 923 K show a chromium carbide (Cr23C6, Cr3C2) formation and the absence of chromium silicides. In the case of a W interlayer a W2C formation is detected and also no tungsten silicides. Single-fibre tensile tests were performed to investigate the influence of the reaction zone on the ultimate tensile strength of the fibres. The ultimate tensile strength for fibres without interlayer remains constant at about 2200 MPa after annealing at 923 K. The fibres with chromium and tungsten interlayers, respectively, show a decrease of about 30% of the ultimate tensile strength after the heat treatment at 923 K.

Reactive Melt Infiltration Of Silicon Into Porous Carbon

NASA Technical Reports Server (NTRS)

Behrendt, Donald R.; Singh, Mrityunjay

1994-01-01

Report describes study of synthesis of silicon carbide and related ceramics by reactive melt infiltration of silicon and silicon/molybdenum alloys into porous carbon preforms. Reactive melt infiltration has potential for making components in nearly net shape, performed in less time and at lower temperature. Object of study to determine effect of initial pore volume fraction, pore size, and infiltration material on quality of resultant product.

Erratum: Correction to: Growth of Silicon Carbide Nanolayers on Contact of Porous Carbon with Molten Silicon

NASA Astrophysics Data System (ADS)

Grinchuk, P. S.; Abuhimd, H. M.; Fisenko, S. P.; Khodyko, Y. A.

2018-01-01

Page 1165 (English translation p. 1105) after the Conclusions section there should stay: Acknowledgment. The work was supported by the King Abdul-Azis Center of Science and Technologies (Saudi Arabia).

Preparation of silicon carbide fibers

DOEpatents

Wei, G.C.

1983-10-12

Silicon carbide fibers suitable for use in the fabrication of dense, high-strength, high-toughness SiC composites or as thermal insulating materials in oxidizing environments are fabricated by a new, simplified method wherein a mixture of short-length rayon fibers and colloidal silica is homogenized in a water slurry. Water is removed from the mixture by drying in air at 120/sup 0/C and the fibers are carbonized by (pyrolysis) heating the mixture to 800 to 1000/sup 0/C in argon. The mixture is subsequently reacted at 1550 to 1900/sup 0/C in argon to yield pure ..beta..-SiC fibers.

Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Powell, J. Anthony (Inventor)

1993-01-01

The invention is a method for growing homoepitaxial films of SiC on low tilt angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive method consists of preparing the growth surface of SiC wafers slightly off-axis (from less the 0.1 to 6 deg) from the (0001) plane, subjecting the growth surface to a suitable etch, and then growing the homoepitaxial film using conventional SiC growth techniques.

Simulation of chemical-vapor-deposited silicon carbide for a cold wall vertical reactor

NASA Astrophysics Data System (ADS)

Lee, Y. L.; Sanchez, J. M.

1997-07-01

The growth rate of silicon carbide obtained by low-pressure chemical vapor deposition from tetramethylsilane is numerically simulated for a cold wall vertical reactor. The transport equations for momentum, heat, and mass transfer are simultaneously solved by employing the finite volume method. A model for reaction rate is also proposed in order to predict the measured growth rates [A. Figueras, S. Garelik, J. Santiso, R. Rodroguez-Clemente, B. Armas, C. Combescure, R. Berjoan, J.M. Saurel and R. Caplain, Mater. Sci. Eng. B 11 (1992) 83]. Finally, the effects of thermal diffusion on the growth rate are investigated.

Thermo-Mechanical Characterization of Silicon Carbide-Silicon Carbide Composites at Elevated Temperatures Using a Unique Combustion Facility

DTIC Science & Technology

2009-09-10

Calibration Tool(s) Surface Temperature ~1250oC Furnace, R-type TC & IR Gas Temperature < 1800oC R-type TC Gas Velocity ~ Mach 0.5 XS -4 High Speed...Camera Equivalence Ratio ~ 0.9 HVOFTM Flow Controller Gas Composition H 2 O, O 2 ,CO 2 , CO, NOx Testo XL 350 Gas Analyzer Mechanical Loading Fatigue...unavailability, however, gas velocity was measured using the X-StreamTM XS -4 High Speed Camera. The range of our interest was the velocity in the upstream of a

Phase equilibrium in system Ti-Si-C-B and synthesis of MAX phase layers in vacuum under the influence of electron beam

NASA Astrophysics Data System (ADS)

Smirnyagina, N. N.; Khaltanova, V. M.; Dasheev, D. E.; Lapina, A. E.

2017-05-01

Composite layers on the basis of carbides and borides the titan and silicon on titanic alloy VТ-1 are generated at diffused saturation by electron beam treatment in vacuum. Formation in a composite of MAX phase Ti3SiC2 is shown. Thermodynamic research of phase equilibrium in systems Ti-Si-C and Ti-B-C in the conditions of high vacuum is executed. The thermodynamics, formation mechanisms of superfirm layers borides and carbides of the titan and silicon are investigated.

Evaluation of CVI SiC/SiC Composites for High Temperature Applications

NASA Technical Reports Server (NTRS)

Kiser, D.; Almansour, A.; Smith, C.; Gorican, D.; Phillips, R.; Bhatt, R.; McCue, T.

2017-01-01

Silicon carbide fiber reinforced silicon carbide (SiC/SiC) composites are candidate materials for various high temperature turbine engine applications because of their high specific strength and good creep resistance at temperatures of 1400 C (2552 F) and higher. Chemical vapor infiltration (CVI) SiC/SiC ceramic matrix composites (CMC) incorporating Sylramic-iBN SiC fiber were evaluated via fast fracture tensile tests (acoustic emission damage characterization to assess cracking behavior), tensile creep testing, and microscopy. The results of this testing and observed material behavior degradation mechanisms are reviewed.

Melt-Infiltration Process For SiC Ceramics And Composites

NASA Technical Reports Server (NTRS)

Behrendt, Donald R.; Singh, Mrityunjay

1994-01-01

Reactive melt infiltration produces silicon carbide-based ceramics and composites faster and more economically than do such processes as chemical vapor infiltration (CVI), reaction sintering, pressureless sintering, hot pressing, and hot isostatic pressing. Process yields dense, strong materials at relatively low cost. Silicon carbide ceramics and composites made by reactive melt infiltration used in combustor liners of jet engines and in nose cones and leading edges of high-speed aircraft and returning spacecraft. In energy industry, materials used in radiant-heater tubes, heat exchangers, heat recuperators, and turbine parts. Materials also well suited to demands of advanced automobile engines.

Improved silicon carbide for advanced heat engines. II - Pressureless sintering and mechanical properties of injection molded silicon carbide

NASA Technical Reports Server (NTRS)

Whalen, Thomas J.; Baer, J. R.

1989-01-01

The influence on density and strength of pressureless sintering in vacuum and argon environments has been evaluated with injection molded SiC materials. Main effects and two factor interactions of sintering (cycle variables temperature, time, heating rate, and atmosphere) were assessed. An improved understanding of the influence of the processing flaws and sintering conditions has been obtained. Strength and density have improved from a baseline level of 299 MPa (43.3 Ksi) and 94 pct of theoretical density to values greater than 483 MPa (70 Ksi) and 97 pct.

Design and evaluation of experimental ceramic automobile thermal reactors

NASA Technical Reports Server (NTRS)

Stone, P. L.; Blankenship, C. P.

1974-01-01

The paper summarizes the results obtained in an exploratory evaluation of ceramics for automobile thermal reactors. Candidate ceramic materials were evaluated in several reactor designs using both engine dynamometer and vehicle road tests. Silicon carbide contained in a corrugated metal support structure exhibited the best performance, lasting 1100 hours in engine dynamometer tests and for more than 38,600 kilimeters (24,000 miles) in vehicle road tests. Although reactors containing glass-ceramic components did not perform as well as silicon carbide, the glass-ceramics still offer good potential for reactor use with improved reactor designs.

Design and evaluation of experimental ceramic automobile thermal reactors

NASA Technical Reports Server (NTRS)

Stone, P. L.; Blankenship, C. P.

1974-01-01

The results obtained in an exploratory evaluation of ceramics for automobile thermal reactors are summarized. Candidate ceramic materials were evaluated in several reactor designs by using both engine-dynamometer and vehicle road tests. Silicon carbide contained in a corrugated-metal support structure exhibited the best performance, lasting 1100 hr in engine-dynamometer tests and more than 38,600 km (24000 miles) in vehicle road tests. Although reactors containing glass-ceramic components did not perform as well as those containing silicon carbide, the glass-ceramics still offer good potential for reactor use with improved reactor designs.

RQL Sector Rig Testing of SiC/SiC Combustor Liners

NASA Technical Reports Server (NTRS)

Verrilli, Michael J.; Martin, Lisa C.; Brewer, David N.

2002-01-01

Combustor liners, manufactured from silicon carbide fiber-reinforced silicon carbide (SiC/SiC) were tested for 260 hr using a simulated gas turbine engine cycle. This report documents the results of the last 56 hr of testing. Damage occurred in one of the six different components that make up the combustor liner set, the rich zone liner. Cracks in the rich zone liner initiated at the leading edge due to stresses resulting from the component attachment configuration. Thin film thermocouples and fiber optic pyrometers were used to measure the rich zone liner's temperature and these results are reported.

Fully ceramic nuclear fuel and related methods

DOEpatents

Venneri, Francesco; Katoh, Yutai; Snead, Lance Lewis

2016-03-29

Various embodiments of a nuclear fuel for use in various types of nuclear reactors and/or waste disposal systems are disclosed. One exemplary embodiment of a nuclear fuel may include a fuel element having a plurality of tristructural-isotropic fuel particles embedded in a silicon carbide matrix. An exemplary method of manufacturing a nuclear fuel is also disclosed. The method may include providing a plurality of tristructural-isotropic fuel particles, mixing the plurality of tristructural-isotropic fuel particles with silicon carbide powder to form a precursor mixture, and compacting the precursor mixture at a predetermined pressure and temperature.

Invited Article: Indenter materials for high temperature nanoindentation

NASA Astrophysics Data System (ADS)

Wheeler, J. M.; Michler, J.

2013-10-01

As nanoindentation at high temperatures becomes increasingly popular, a review of indenter materials for usage at high temperatures is instructive for identifying appropriate indenter-sample materials combinations to prevent indenter loss or failure due to chemical reactions or wear during indentation. This is an important consideration for nanoindentation as extremely small volumes of reacted indenter material will have a significant effect on measurements. The high temperature hardness, elastic modulus, thermal properties, and chemical reactivities of diamond, boron carbide, silicon carbide, tungsten carbide, cubic boron nitride, and sapphire are discussed. Diamond and boron carbide show the best elevated temperature hardness, while tungsten carbide demonstrates the lowest chemical reactivity with the widest array of elements.

Joining of materials using laser heating

DOEpatents

Cockeram, Brian V.; Hicks, Trevor G.; Schmid, Glenn C.

2003-07-01

A method for diffusion bonding ceramic layers such as boron carbide, zirconium carbide, or silicon carbide uses a defocused laser beam to heat and to join ceramics with the use of a thin metal foil insert. The metal foil preferably is rhenium, molybdenum or titanium. The rapid, intense heating of the ceramic/metal/ceramic sandwiches using the defocused laser beam results in diffusive conversion of the refractory metal foil into the ceramic and in turn creates a strong bond therein.

Silicon carbide optics for space and ground based astronomical telescopes

NASA Astrophysics Data System (ADS)

Robichaud, Joseph; Sampath, Deepak; Wainer, Chris; Schwartz, Jay; Peton, Craig; Mix, Steve; Heller, Court

2012-09-01

Silicon Carbide (SiC) optical materials are being applied widely for both space based and ground based optical telescopes. The material provides a superior weight to stiffness ratio, which is an important metric for the design and fabrication of lightweight space telescopes. The material also has superior thermal properties with a low coefficient of thermal expansion, and a high thermal conductivity. The thermal properties advantages are important for both space based and ground based systems, which typically need to operate under stressing thermal conditions. The paper will review L-3 Integrated Optical Systems - SSG’s (L-3 SSG) work in developing SiC optics and SiC optical systems for astronomical observing systems. L-3 SSG has been fielding SiC optical components and systems for over 25 years. Space systems described will emphasize the recently launched Long Range Reconnaissance Imager (LORRI) developed for JHU-APL and NASA-GSFC. Review of ground based applications of SiC will include supporting L-3 IOS-Brashear’s current contract to provide the 0.65 meter diameter, aspheric SiC secondary mirror for the Advanced Technology Solar Telescope (ATST).

Nondestructive ultrasonic characterization of armor grade silicon carbide

NASA Astrophysics Data System (ADS)

Portune, Andrew Richard

Ceramic materials have traditionally been chosen for armor applications for their superior mechanical properties and low densities. At high strain rates seen during ballistic events, the behavior of these materials relies upon the total volumetric flaw concentration more so than any single anomalous flaw. In this context flaws can be defined as any microstructural feature which detriments the performance of the material, potentially including secondary phases, pores, or unreacted sintering additives. Predicting the performance of armor grade ceramic materials depends on knowledge of the absolute and relative concentration and size distribution of bulk heterogeneities. Ultrasound was chosen as a nondestructive technique for characterizing the microstructure of dense silicon carbide ceramics. Acoustic waves interact elastically with grains and inclusions in large sample volumes, and were well suited to determine concentration and size distribution variations for solid inclusions. Methodology was developed for rapid acquisition and analysis of attenuation coefficient spectra. Measurements were conducted at individual points and over large sample areas using a novel technique entitled scanning acoustic spectroscopy. Loss spectra were split into absorption and scattering dominant frequency regimes to simplify analysis. The primary absorption mechanism in polycrystalline silicon carbide was identified as thermoelastic in nature. Correlations between microstructural conditions and parameters within the absorption equation were established through study of commercial and custom engineered SiC materials. Nonlinear least squares regression analysis was used to estimate the size distributions of boron carbide and carbon inclusions within commercial SiC materials. This technique was shown to additionally be capable of approximating grain size distributions in engineered SiC materials which did not contain solid inclusions. Comparisons to results from electron microscopy exhibited favorable agreement between predicted and observed distributions. Developed techniques were applied to large sample areas using scanning acoustic spectroscopy to map variations in the size distribution and concentration of grains and solid inclusions within the bulk microstructure. The experiments performed in this thesis form the foundation of a novel characterization technique capable of mapping variations in sample composition which could be extended to a wide range of dense polycrystalline heterogeneous materials.

B{sub 4}C-SiC reaction-sintered coatings on graphite plasma facing components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valentine, P.G.; Trester, P.W.; Winter, J.

1994-05-01

Boron carbide plus silicon carbide (B{sub 4}C-SiC) reaction-sintered coatings for use on graphite plasma-facing components were developed. Such coatings are of interest in TEXTOR tokamak limiter-plasma interactions as a means of reducing carbon erosion, of providing a preferred release of boron for oxygen gettering, and of investigating silicon`s effect on radiative edge phenomena. Specimens evaluated had (a) either Ringsdorfwerke EK 98 graphite or Le Carbon Lorraine felt-type AEROLOR A05 CFC substrates; (b) multiphase coatings, comprised of B{sub 4}C, Sic, and graphite; (c) nominal coating compositions of 69 wt.-% B{sub 4}C + 31 wt.-% SiC; and (d) nominal coating thicknesses betweenmore » 250 and 775 {mu}m. Coated coupons were evaluated by high heat flux experiments in the JUDITH (electron beam) test facility at KFA. Simulated disruptions, with energy densities up to 10 MJm{sup {minus}2}, and normal operation simulations, with power densities up to 12 MWm{sup {minus}2}, were conducted. The coatings remained adherent; at the highest levels tested, minor changes occurred, including localized remelting, modification of the crystallographic phases, occasional microcracking, and erosion.« less

[beta]-silicon carbide protective coating and method for fabricating same

DOEpatents

Carey, P.G.; Thompson, J.B.

1994-11-01

A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating are disclosed. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or [mu]c-SiC film on the surface and produce [beta]-SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface. 3 figs.

Preparation and Characterization of Single Crystals and Epitaxial Layers of Silicon Carbide by Molten Salt Electrolysis.

DTIC Science & Technology

1980-10-01

requires the simultaneous cathodic deposi- tion of silicon and carbon under conditions where reaction to form SiC will occur. In this study sodium or...reactivity with the melt. Nickel suffers from the disadvantage that it reacts with silicon to form nickel silicides , but the concentration of silicides in

Modified Process For Formation Of Silicon Carbide Matrix Composites

NASA Technical Reports Server (NTRS)

Behrendt, Donald R.; Singh, Mrityunjay

1996-01-01

Modified version of process for making SiC-fiber/SiC-matrix composite material reduces damage to SiC (SCS-6) fibers and to carbon-rich coatings on fibers. Modification consists of addition of second polymer-infiltration-and-pyrolysis step to increase carbon content of porous matrix before infiltration with liquid silicon or silicon alloy.

Process for making silicon from halosilanes and halosilicons

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Process for making silicon

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1987-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Electrical Properties of Materials for Elevated Temperature Resistance Strain Gage Application. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Lei, Jih-Fen

1987-01-01

The objective was to study the electrical resistances of materials that are potentially useful as resistance strain gages at 1000 C. Transition metal carbides and nitrides, boron carbide and silicon carbide were selected for the experimental phase of this research. Due to their low temperature coefficient of resistance and good stability, TiC, ZrC, B sub 4 C and beta-SiC are suggested as good candidates for high temperature resistance strain gage applications.

Super-Lensing and Sub-Wavelength Antennas in Mid-IR Using Silicon Carbide

NASA Astrophysics Data System (ADS)

Shvets, Gennady; Korobkin, Dmitriy; Urzhumov, Yaroslav A.; Zorman, Christian

2006-03-01

Extraordinary properties of SiC in mid-infrared (negative dielectric permittivity and small losses) make it an ideal building block for making negative index meta-materials in that important part of the electromagnetic spectrum. We report on a series of experiments demonstrating that thin films of SiC can be used as a ``perfect'' near-field lens. We have theoretically designed and experimentally implemented a super-lens ion mid-IR using SiC. We also report excitation of electrostatic resonances of two structures based on a sub-micron film of crystalline silicon carbide: (a) nano-holes drilled in the free-standing SiC membrane, and (b) metallic nano-posts evaporated on the SiC membrane. Applications of nano-hole resonances to excitation of magnetic moments in nano-structured SiC and development of negative index materials will be discussed, as will be the prospects of using nano-structured SiC films for laser processing of materials on a nanoscale.

Mechanical properties of aluminium fused SiO2 particulate composites cast using metallic and non-metallic chills

NASA Astrophysics Data System (ADS)

Harshith, H. S.; Hemanth, Joel

2018-04-01

This research work aims at developing and mechanical characterization of aluminium (LM13) based metal matrix composite reinforced with varying percentage of fused SiO2 (3%,6%,9%,12%). The mechanical properties are completely dependent on the microstructural parameters of the system. Also the microstructure further depends on the cooling rates during solidification process. Various Chills like Silicon carbide, Mild steel, Copper were used during the casting process to increase the rate of solidification, which enhances the mechanical properties of the composite. The chill casted specimens were subjected to tensile and hardness tests followed by microstructure studies. A casting produced using mild steel chill exhibited higher young's modulus and was found to be maximum at 9% reinforcement. Finer microstructure and better UTS were seen for specimen's casted using copper chills, whereas silicon carbide and mild steel chills gave rise to very coarse structure with reduced UTS values compared to copper chills.

Two-Dimensional Nonlinear Finite Element Analysis of CMC Microstructures

NASA Technical Reports Server (NTRS)

Mital, Subodh K.; Goldberg, Robert K.; Bonacuse, Peter J.

2011-01-01

Detailed two-dimensional finite element analyses of the cross-sections of a model CVI (chemical vapor infiltrated) SiC/SiC (silicon carbide fiber in a silicon carbide matrix) ceramic matrix composites are performed. High resolution images of the cross-section of this composite material are generated using serial sectioning of the test specimens. These images are then used to develop very detailed finite element models of the cross-sections using the public domain software OOF2 (Object Oriented Analysis of Material Microstructures). Examination of these images shows that these microstructures have significant variability and irregularity. How these variabilities manifest themselves in the variability in effective properties as well as the stress distribution, damage initiation and damage progression is the overall objective of this work. Results indicate that even though the macroscopic stress-strain behavior of various sections analyzed is very similar, each section has a very distinct damage pattern when subjected to in-plane tensile loads and this damage pattern seems to follow the unique architectural and microstructural details of the analyzed sections.