Improving Efficiency of III-N Quantum Well Based Optoelectronic Devices through Active Region Design and Growth Techniques

NASA Astrophysics Data System (ADS)

Young, Nathan Garrett

The III-Nitride materials system provides a fascinating platform for developing optoelectronic devices, such as solar cells and LEDs, which have the power to dramatically improve the efficiency of our power consumption and reduce our environmental footprint. Finding ways to make these devices more efficient is key to driving their widespread adoption. This dissertation focuses on the intersection of challenges in physics and metalorganic chemical vapor deposition (MOCVD) growth at the nanoscale when designing for device efficiency. In order to create the best possible InGaN solar cell, a multiple quantum well (MQW) active region design had to be employed to prevent strain relaxation related degradation. There were two competing challenges for MQW active region design and growth. First, it was observed current collection efficiency improved with thinner quantum barriers, which promoted efficient tunneling transport instead of inefficiency thermally activated escape. Second, GaN barriers could planarize surface defects in the MQW region under the right conditions and when grown thick enough. A two-step growth method for thinner quantum barriers was developed that simultaneously allowed for tunneling transport and planarized V-defects. Barriers as thin as 4 nm were employed in MQW active regions with up to 30 periods without structural or electrical degradation, leading to record performance. Application of dielectric optical coatings greatly reduced surface reflections and allowed a second pass of light through the device. This both demonstrated the feasibility of multijunction solar integration and boosted conversion efficiency to record levels for an InGaN solar cell. III-N LEDs have achieved state-of-the-art performance for decades, but still suffer from the phenomena of efficiency droop, where device efficiency drops dramatically at high power operation. Droop is exacerbated by the polarization-induced electric fields in InGaN quantum wells, which originate from a lack of inversion symmetry in GaN's wurtzite crystal structure. These fields can be screened by using highly doped layers, but the extreme dopant densities predicted by simulation for complete screening may require using Ge as an alternative n-type dopant to Si. GaN:Ge layers with excellent electrical characteristics were grown by MOCVD with doping densities exceeding 1020 cm -3. However, their surface morphologies were very poor and they proved a poor screening dopant in LED structures. Using Si as the n-type screening dopant, LEDs with single QW active regions were grown, packaged, and tested. Biased photoluminescence showed strong evidence of complete polarization screening. The LEDs had low droop, but also low peak efficiencies. Possible explanations for trends in efficiency with varying QW width and field screening will be discussed.

Continuous wave power scaling in high power broad area quantum cascade lasers

NASA Astrophysics Data System (ADS)

Suttinger, M.; Leshin, J.; Go, R.; Figueiredo, P.; Shu, H.; Lyakh, A.

2018-02-01

Experimental and model results for high power broad area quantum cascade lasers are presented. Continuous wave power scaling from 1.62 W to 2.34 W has been experimentally demonstrated for 3.15 mm-long, high reflection-coated 5.6 μm quantum cascade lasers with 15 stage active region for active region width increased from 10 μm to 20 μm. A semi-empirical model for broad area devices operating in continuous wave mode is presented. The model uses measured pulsed transparency current, injection efficiency, waveguide losses, and differential gain as input parameters. It also takes into account active region self-heating and sub-linearity of pulsed power vs current laser characteristic. The model predicts that an 11% improvement in maximum CW power and increased wall plug efficiency can be achieved from 3.15 mm x 25 μm devices with 21 stages of the same design but half doping in the active region. For a 16-stage design with a reduced stage thickness of 300Å, pulsed roll-over current density of 6 kA/cm2 , and InGaAs waveguide layers; optical power increase of 41% is projected. Finally, the model projects that power level can be increased to 4.5 W from 3.15 mm × 31 μm devices with the baseline configuration with T0 increased from 140 K for the present design to 250 K.

Thermally robust semiconductor optical amplifiers and laser diodes

DOEpatents

Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

2002-01-01

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

Optical-microwave interactions in semiconductor devices

NASA Astrophysics Data System (ADS)

Figueroa, L.; Slayman, C.; Yen, H. W.

1980-02-01

GaAs FETs with built-in optical waveguides are being developed. The purpose is to allow optical signals to be coupled into the active region of the devices efficiently. These FETs will be useful for optical mixing, optical injection locking, and optical detection purposes.

Beta ray flux measuring device

DOEpatents

Impink, Jr., Albert J.; Goldstein, Norman P.

1990-01-01

A beta ray flux measuring device in an activated member in-core instrumentation system for pressurized water reactors. The device includes collector rings positioned about an axis in the reactor's pressure boundary. Activated members such as hydroballs are positioned within respective ones of the collector rings. A response characteristic such as the current from or charge on a collector ring indicates the beta ray flux from the corresponding hydroball and is therefore a measure of the relative nuclear power level in the region of the reactor core corresponding to the specific exposed hydroball within the collector ring.

Invited Article: An active terahertz polarization converter employing vanadium dioxide and a metal wire grating in total internal reflection geometry

NASA Astrophysics Data System (ADS)

Liu, Xudong; Chen, Xuequan; Parrott, Edward P. J.; Han, Chunrui; Humbert, Georges; Crunteanu, Aurelian; Pickwell-MacPherson, Emma

2018-05-01

Active broadband terahertz (THz) polarization manipulation devices are challenging to realize, but also of great demand in broadband terahertz systems. Vanadium dioxide (VO2) shows a promising phase transition for active control of THz waves and provides broadband polarization characteristics when integrated within grating-type structures. We creatively combine a VO2-based grating structure with a total internal reflection (TIR) geometry providing a novel interaction mechanism between the electromagnetic waves and the device, to realize a powerful active broadband THz polarization-controlling device. The device is based on a Si-substrate coated with a VO2 layer and a metal grating structure on top, attached to a prism for generating the TIR condition on the Si-VO2-grating interface. The grating is connected to electrodes for electrically switching the VO2 between its insulating and conducting phases. By properly selecting the incident angle of the THz waves, the grating direction, and the incident polarization state, we first achieved a broadband intensity modulator under a fused silica prism with an average modulation depth of 99.75% in the 0.2-1.1 THz region. Additionally, we realized an active ultra-broadband quarter-wave converter under a Si prism that can be switched between a 45° linear rotator and a quarter wave converter in the 0.8-1.5 THz region. This is the first demonstration of an active quarter-wave converter with ultra-broad bandwidth performance. Our work shows a highly flexible and multifunctional polarization-controlling device for broadband THz applications.

Aloe vera in active and passive regions of electronic devices towards a sustainable development

NASA Astrophysics Data System (ADS)

Lim, Zhe Xi; Sreenivasan, Sasidharan; Wong, Yew Hoong; Cheong, Kuan Yew

2017-07-01

The increasing awareness towards sustainable development of electronics has driven the search for natural bio-organic materials in place of conventional electronic materials. The concept of using natural bio-organic materials in electronics provides not only an effective solution to address global electronic waste crisis, but also a compelling template for sustainable electronics manufacturing. This paper attempts to provide an overview of using Aloe vera gel as a natural bio-organic material for various electronic applications. Important concepts such as responses of living Aloe vera plant towards electrical stimuli and demonstrations of Aloe vera films as passive and active regions of electronic devices are highlighted in chronological order. The biodegradability and biocompatibility of Aloe vera can bring the world a step closer towards the ultimate goal of sustainable development of electronic devices from "all-natural" materials.

Direct mounted photovoltaic device with improved adhesion and method thereof

DOEpatents

Boven, Michelle L; Keenihan, James R; Lickly, Stan; Brown, Jr., Claude; Cleereman, Robert J; Plum, Timothy C

2014-12-23

The present invention is premised upon a photovoltaic device suitable for directly mounting on a structure. The device includes an active portion including a photovoltaic cell assembly having a top surface portion that allows transmission of light energy to a photoactive portion of the photovoltaic device for conversion into electrical energy and a bottom surface having a bottom bonding zone; and an inactive portion immediately adjacent to and connected to the active portion, the inactive portion having a region for receiving a fastener to connect the device to the structure and having on a top surface, a top bonding zone; wherein one of the top and bottom bonding zones comprises a first bonding element and the other comprises a second bonding element, the second bonding element designed to interact with the first bonding element on a vertically overlapped adjacent photovoltaic device to bond the device to such adjacent device or to the structure.

Simplified nonplanar wafer bonding for heterogeneous device integration

NASA Astrophysics Data System (ADS)

Geske, Jon; Bowers, John E.; Riley, Anton

2004-07-01

We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

Lithium-drifted silicon detector with segmented contacts

DOEpatents

Tindall, Craig S.; Luke, Paul N.

2006-06-13

A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

NASA Astrophysics Data System (ADS)

Liang, De-Chun; An, Qi; Jin, Peng; Li, Xin-Kun; Wei, Heng; Wu, Ju; Wang, Zhan-Guo

2011-10-01

This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

Passive gas separator and accumulator device

DOEpatents

Choe, H.; Fallas, T.T.

1994-08-02

A separation device employing a gas separation filter and swirler vanes for separating gas from a gas-liquid mixture is provided. The cylindrical filter utilizes the principle that surface tension in the pores of the filter prevents gas bubbles from passing through. As a result, the gas collects in the interior region of the filter and coalesces to form larger bubbles in the center of the device. The device is particularly suited for use in microgravity conditions since the swirlers induce a centrifugal force which causes liquid to move from the inner region of the filter, pass the pores, and flow through the outlet of the device while the entrained gas is trapped by the filter. The device includes a cylindrical gas storage screen which is enclosed by the cylindrical gas separation filter. The screen has pores that are larger than those of the filters. The screen prevents larger bubbles that have been formed from reaching and interfering with the pores of the gas separation filter. The device is initially filled with a gas other than that which is to be separated. This technique results in separation of the gas even before gas bubbles are present in the mixture. Initially filling the device with the dissimilar gas and preventing the gas from escaping before operation can be accomplished by sealing the dissimilar gas in the inner region of the separation device with a ruptured disc which can be ruptured when the device is activated for use. 3 figs.

Passive gas separator and accumulator device

DOEpatents

Choe, Hwang; Fallas, Thomas T.

1994-01-01

A separation device employing a gas separation filter and swirler vanes for separating gas from a gasliquid mixture is provided. The cylindrical filter utilizes the principle that surface tension in the pores of the filter prevents gas bubbles from passing through. As a result, the gas collects in the interior region of the filter and coalesces to form larger bubbles in the center of the device. The device is particularly suited for use in microgravity conditions since the swirlers induce a centrifugal force which causes liquid to move from the inner region of the filter, pass the pores, and flow through the outlet of the device while the entrained gas is trapped by the filter. The device includes a cylindrical gas storage screen which is enclosed by the cylindrical gas separation filter. The screen has pores that are larger than those of the filters. The screen prevents larger bubbles that have been formed from reaching and interfering with the pores of the gas separation filter. The device is initially filled with a gas other than that which is to be separated. This technique results in separation of the gas even before gas bubbles are present in the mixture. Initially filling the device with the dissimilar gas and preventing the gas from escaping before operation can be accomplished by sealing the dissimilar gas in the inner region of the separation device with a ruptured disc which can be ruptured when the device is activated for use.

Hot Electron Effects of Importance for Micron and Submicron Devices.

DTIC Science & Technology

1981-09-01

pair injected into the active region. That g(E) tron energy loss (in units of LO phonons do modify laser action has been shown in the 4 ,) stevia ...and x,) far away from the silicon-silicon-dioxide inter- Evoluton of the size of electronic devices. (a) Original transistor patent of John Bardeen face

The effect of guard ring on leakage current and spectroscopic performance of TlBr planar detectors

NASA Astrophysics Data System (ADS)

Kargar, Alireza; Kim, Hadong; Cirignano, Leonard; Shah, Kanai

2014-09-01

Four thallium bromide planar detectors were fabricated from materials grown at RMD Inc. The TlBr samples were prepared to investigate the effect of guard ring on device gamma-ray spectroscopy performance, and to investigate the leakage current through surface and bulk. The devices' active area in planar configuration were 4.4 × 4.4 × 1.0 mm3. In this report, the detector fabrication process is described and the resulting energy spectra are discussed. It is shown that the guard ring improves device spectroscopic performance by shielding the sensing electrode from the surface leakage current, and by making the electric filed more uniform in the active region of the device.

Neutron radiation tolerance of Au-activated silicon

NASA Technical Reports Server (NTRS)

Joyner, W. T.

1987-01-01

Double injection devices prepared by the introduction of deep traps, using the Au activation method have been found to tolerate gamma irradiation into the Gigarad (Si) region without significant degradation of operating characteristics. Silicon double injection devices, using deep levels creacted by Au diffusion, can tolerate fast neutron irradiation up to 10 to the 15th n/sq cm. Significant parameter degradation occurs at 10 to the 16th n/sq cm. However, since the actual doping of the basic material begins to change as a result of the transmutation of silicon into phosphorus for neutron fluences greater than 10 to the 17th/sq cm, the radiation tolerance of these devices is approaching the limit possible for any device based on initially doped silicon.

Method of forming thermally stable high-resistivity regions in n-type indium phosphide by oxygen implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thompson, P.E.; Dietrich, H.B.

1985-12-12

Objects of this invention are: to form high-temperature stable isolation regions in InP; to provide InP wafers that allow greater flexibility in the design and fabrication of discrete devices; to provide new and improved InP semiconductor devices in n-type InP; to provide high-resisitivity isolation regions in InP; to extend the usefulness of damage-induced isolation in n-type InP by making possible processes in which the isolation implantation precedes the alloying of ohmic contacts; and to provide n-type InP substrates without unwanted conductive layers. The above and other object are realized by an InP wafer comprising a S.I. InP substrate; a n-typemore » InP active layer disposed on the substrate; and oxygen ion implanted isolation regions disposed in the active layer. The S.I. InP dopant may comprise either Fe or Cr.« less

Integrating nanostructured electrodes in organic photovoltaic devices for enhancing near-infrared photoresponse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nardes, Alexandre M.; Ahn, Sungmo; Rourke, Devin

2016-12-01

We introduce a simple methodology to integrate prefabricated nanostructured-electrodes in solution-processed organic photovoltaic (OPV) devices. The tailored 'photonic electrode' nanostructure is used for light management in the device and for hole collection. This approach opens up new possibilities for designing photonically active structures that can enhance the absorption of sub-bandgap photons in the active layer. We discuss the design, fabrication and characterization of photonic electrodes, and the methodology for integrating them to OPV devices using a simple lamination technique. We demonstrate theoretically and experimentally that OPV devices using photonic electrodes show a factor of ca. 5 enhancement in external quantummore » efficiency (EQE) in the near infrared region. We use simulations to trace this observed efficiency enhancement to surface plasmon polariton modes in the nanostructure.« less

Power scaling and experimentally fitted model for broad area quantum cascade lasers in continuous wave operation

NASA Astrophysics Data System (ADS)

Suttinger, Matthew; Go, Rowel; Figueiredo, Pedro; Todi, Ankesh; Shu, Hong; Leshin, Jason; Lyakh, Arkadiy

2018-01-01

Experimental and model results for 15-stage broad area quantum cascade lasers (QCLs) are presented. Continuous wave (CW) power scaling from 1.62 to 2.34 W has been experimentally demonstrated for 3.15-mm long, high reflection-coated QCLs for an active region width increased from 10 to 20 μm. A semiempirical model for broad area devices operating in CW mode is presented. The model uses measured pulsed transparency current, injection efficiency, waveguide losses, and differential gain as input parameters. It also takes into account active region self-heating and sublinearity of pulsed power versus current laser characteristic. The model predicts that an 11% improvement in maximum CW power and increased wall-plug efficiency can be achieved from 3.15 mm×25 μm devices with 21 stages of the same design, but half doping in the active region. For a 16-stage design with a reduced stage thickness of 300 Å, pulsed rollover current density of 6 kA/cm2, and InGaAs waveguide layers, an optical power increase of 41% is projected. Finally, the model projects that power level can be increased to ˜4.5 W from 3.15 mm×31 μm devices with the baseline configuration with T0 increased from 140 K for the present design to 250 K.

Organic photovoltaic devices with a single layer geometry (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kolesov, Vladimir A.; Fuentes-Hernandez, Canek; Aizawa, Naoya; Larrain, Felipe A.; Chou, Wen-Fang; Perrotta, Alberto; Graham, Samuel; Kippelen, Bernard

2016-09-01

Organic photovoltaics (OPV) can lead to a low cost and short energy payback time alternative to existing photovoltaic technologies. However, to fulfill this promise, power conversion efficiencies must be improved and simultaneously the architecture of the devices and their processing steps need to be further simplified. In the most efficient devices to date, the functions of photocurrent generation, and hole/electron collection are achieved in different layers adding complexity to the device fabrication. In this talk, we present a novel approach that yields devices in which all these functions are combined in a single layer. Specifically, we report on bulk heterojunction devices in which amine-containing polymers are first mixed in the solution together with the donor and acceptor materials that form the active layer. A single-layer coating yields a self-forming bottom electron-collection layer comprised of the amine-containing polymer (e.g. PEIE). Hole-collection is achieved by subsequent immersion of this single layer in a solution of a polyoxometalate (e.g. phosphomolybdic acid (PMA)) leading to an electrically p-doped region formed by the diffusion of the dopant molecules into the bulk. The depth of this doped region can be controlled with values up to tens of nm by varying the immersion time. Devices with a single 500 nm-thick active layer of P3HT:ICBA processed using this method yield power conversion efficiency (PCE) values of 4.8 ± 0.3% at 1 sun and demonstrate a performance level superior to that of benchmark three-layer devices with separate layers of PEIE/P3HT:ICBA/MoOx (4.1 ± 0.4%). Devices remain stable after shelf lifetime experiments carried-out at 60 °C over 280 h.

High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.

PubMed

Cao, Yulian; Ji, Haiming; Xu, Pengfei; Gu, Yongxian; Ma, Wenquan; Yang, Tao

2012-10-01

We demonstrate high-brightness 1.3 μm tapered lasers with high temperature stability by using p-doped InAs/GaAs quantum dots (QDs) as the active region. It is found that the beam quality factor M(2) for the devices is almost unchanged as the light power and temperature increase. The almost constant M(2) results from the p-doped QD active region.

Lens Coupled Quantum Cascade Laser

NASA Technical Reports Server (NTRS)

Lee, Alan Wei Min (Inventor); Hu, Qing (Inventor)

2013-01-01

Terahertz quantum cascade (QC) devices are disclosed that can operate, e.g., in a range of about 1 THz to about 10 THz. In some embodiments, QC lasers are disclosed in which an optical element (e.g., a lens) is coupled to an output facet of the laser's active region to enhance coupling of the lasing radiation from the active region to an external environment. In other embodiments, terahertz amplifier and tunable terahertz QC lasers are disclosed.

Optical waveguide device with an adiabatically-varying width

DOEpatents

Watts,; Michael R. , Nielson; Gregory, N [Albuquerque, NM

2011-05-10

Optical waveguide devices are disclosed which utilize an optical waveguide having a waveguide bend therein with a width that varies adiabatically between a minimum value and a maximum value of the width. One or more connecting members can be attached to the waveguide bend near the maximum value of the width thereof to support the waveguide bend or to supply electrical power to an impurity-doped region located within the waveguide bend near the maximum value of the width. The impurity-doped region can form an electrical heater or a semiconductor junction which can be activated with a voltage to provide a variable optical path length in the optical waveguide. The optical waveguide devices can be used to form a tunable interferometer (e.g. a Mach-Zehnder interferometer) which can be used for optical modulation or switching. The optical waveguide devices can also be used to form an optical delay line.

Activities of Western Research Application Center

NASA Technical Reports Server (NTRS)

1972-01-01

Operations of the regional dissemination center for NASA technology collection and information transfer are reported. Activities include customized searches for engineering and scientific applications in industry and technology transfers to businesses engaged in manufacturing high energy physics devices, subsurface instruments, batteries, medical instrumentation, and hydraulic equipment.

High voltage semiconductor devices and methods of making the devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matocha, Kevin; Chatty, Kiran; Banerjee, Sujit

A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias.more » The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.« less

High voltage semiconductor devices and methods of making the devices

DOEpatents

Matocha, Kevin; Chatty, Kiran; Banerjee, Sujit

2017-02-28

A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.

Active space debris removal—A preliminary mission analysis and design

NASA Astrophysics Data System (ADS)

Castronuovo, Marco M.

2011-11-01

The active removal of five to ten large objects per year from the low Earth orbit (LEO) region is the only way to prevent the debris collisions from cascading. Among the three orbital regions near the Earth where most catastrophic collisions are predicted to occur, the one corresponding to a sun-synchronous condition is considered the most relevant. Forty-one large rocket bodies orbiting in this belt have been identified as the priority targets for removal. As part of a more comprehensive system engineering solution, a space mission dedicated to the de-orbiting of five rocket bodies per year from this orbital regime has been designed. The selected concept of operations envisages the launch of a satellite carrying a number of de-orbiting devices, such as solid propellant kits. The satellite performs a rendezvous with an identified object and mates with it by means of a robotic arm. A de-orbiting device is attached to the object by means of a second robotic arm, the object is released and the device is activated. The spacecraft travels then to the next target. The present paper shows that an active debris removal mission capable of de-orbiting 35 large objects in 7 years is technically feasible, and the resulting propellant mass budget is compatible with many existing platforms.

Laboratory demonstration model: Active cleaning technique device. [for removal of contaminants from an optical surface

NASA Technical Reports Server (NTRS)

Shannon, R. L.; Gillette, R. B.

1974-01-01

The technique which utilizes exposure to a plasma to remove contaminants from a surface was incorporated into a laboratory model which demonstrates active cleaning by both plasma cleaning and ion sputtering modes of operation. The development phase is reported and includes discussion of the plasma tube configuration, device design, and performance tests. A general description of the active cleaning device is provided which includes information on the main power/plasma discharge sensors, and the power, gas supply, and ion accelerator systems. Development of the active cleaning species at high vacuum conditions is described and results indicate that plasma cleaning occurs in the region of a visible plume which extends from the end of the plasma tube. Recommendations are made for research to determine the plasma cleaning mechanism and the plasma species responsible for the cleaning, as well limitations on the type of contaminants that can be removed.

Tunable organic distributed feedback dye laser device excited through Förster mechanism

NASA Astrophysics Data System (ADS)

Tsutsumi, Naoto; Hinode, Taiki

2017-03-01

Tunable organic distributed feedback (DFB) dye laser performances are re-investigated and characterized. The slab-type waveguide DFB device consists of air/active layer/glass substrate. Active layer consisted of tris(8-quinolinolato)aluminum (Alq3), 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM) dye, and polystyrene (PS) matrix. Effective energy transfer from Alq3 to DCM through Förster mechanism enhances the laser emission. Slope efficiency in the range of 4.9 and 10% is observed at pump energy region higher than 0.10-0.15 mJ cm-2 (lower threshold), which is due to the amplified spontaneous emission (ASE) and lasing. Typical slope efficiency for lasing in the range of 2.0 and 3.0% is observed at pump energy region higher than 0.25-0.30 mJ cm-2 (higher threshold). The tuning wavelength for the laser emission is ranged from 620 to 645 nm depending on the ASE region.

Organic light emitting devices for illumination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hack, Michael; Lu, Min-Hao Michael; Weaver, Michael S

An organic light emitting device an a method of obtaining illumination from such a device is provided. The device has a plurality of regions, each region having an organic emissive layer adapted to emit a different spectrum of light. The regions in combination emit light suitable for illumination purposes. The area of each region may be selected such that the device is more efficient than an otherwise equivalent device having regions of equal size. The regions may have an aspect ratio of at least about four. All parts of any given region may be driven at the same current.

Terahertz generation in mid-infrared quantum cascade lasers with a dual-upper-state active region

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fujita, Kazuue, E-mail: kfujita@crl.hpk.co.jp; Hitaka, Masahiro; Ito, Akio

2015-06-22

We report the performance of room temperature terahertz sources based on intracavity difference-frequency generation in mid-infrared quantum cascade lasers with a dual-upper-state (DAU) active region. DAU active region design is theoretically expected to produce larger optical nonlinearity for terahertz difference-frequency generation, compared to the active region designs of the bound-to-continuum type used previously. Fabricated buried heterostructure devices with a two-section buried distributed feedback grating and the waveguide designed for Cherenkov difference-frequency phase-matching scheme operate in two single-mode mid-infrared wavelengths at 10.7 μm and 9.7 μm and produce terahertz output at 2.9 THz with mid-infrared to terahertz conversion efficiency of 0.8 mW/W{sup 2}more » at room temperature.« less

Effects of Contact-Induced Doping on the Behaviors of Organic Photovoltaic Devices

DOE PAGES

Wang, Jian; Xu, Liang; Lee, Yun -Ju; ...

2015-10-09

Substrates can significantly affect the electronic properties of organic semiconductors. In this paper, we report the effects of contact-induced doping, arising from charge transfer between a high work function hole extraction layer (HEL) and the organic active layer, on organic photovoltaic device performance. Employing a high work function HEL is found to increase doping in the active layer and decrease photocurrent. Combined experimental and modeling investigations reveal that higher doping increases polaron–exciton quenching and carrier recombination within the field-free region. Consequently, there exists an optimal HEL work function that enables a large built-in field while keeping the active layer dopingmore » low. This value is found to be ~0.4 eV larger than the pinning level of the active layer material. As a result, these understandings establish a criterion for optimal design of the HEL when adapting a new active layer system and can shed light on optimizing performance in other organic electronic devices.« less

Organic light emitting devices for illumination

DOEpatents

Hack, Michael; Lu, Min-Hao Michael; Weaver, Michael S.

2010-02-16

An organic light emitting device is provided. The device has a plurality of regions, each region having an organic emissive layer adapted to emit a different spectrum of light. The regions in combination emit light suitable for illumination purposes. The area of each region may be selected such that the device is more efficient that an otherwise equivalent device having regions of equal size. The regions may have an aspect ratio of at least about four. All parts of any given region may be driven at the same current.

Note: Wearable near-infrared spectroscopy imager for haired region

NASA Astrophysics Data System (ADS)

Kiguchi, M.; Atsumori, H.; Fukasaku, I.; Kumagai, Y.; Funane, T.; Maki, A.; Kasai, Y.; Ninomiya, A.

2012-05-01

A wearable optical topography system was developed that is based on near-infrared spectroscopy (NIRS) for observing brain activity noninvasively including in regions covered by hair. An avalanche photo diode, high voltage dc-dc converter, and preamplifier were placed in an electrically shielded case to be safely mounted on the head. Rubber teeth and a glass rod were prepared to clear away hair and reach the scalp. These devices realized for the first time a wearable NIRS imager for any region of the cortex. The activity in the motor cortex during finger tapping was successfully observed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pina-Hernandez, Carlos; Koshelev, Alexander; Dhuey, Scott

A novel method to realizing printed active photonic devices was developed using nanoimprint lithography (NIL), combining a printable high-refractive index material and colloidal CdSe/CdS quantum dots (QDs) for applications in the visible region. Active media QDs were applied in two different ways: embedded inside a printable high-refractive index matrix to form an active printable hybrid nanocomposite, and used as a uniform coating on top of printed photonic devices. As a proof-of-demonstration for printed active photonic devices, two-dimensional (2-D) photonic crystals as well as 1D and 2D photonic nanocavities were successfully fabricated following a simple reverse-nanoimprint process. We observed enhanced photoluminescencemore » from the 2D photonic crystal and the 1D nanocavities. Outstandingly, the process presented in this study is fully compatible with large-scale manufacturing where the patterning areas are only limited by the size of the corresponding mold. This work shows that the integration of active media and functional materials is a promising approach to the realization of integrated photonics for visible light using high throughput technologies. We believe that this work represents a powerful and cost-effective route for the development of numerous nanophotonic structures and devices that will lead to the emergence of new applications.« less

Electro-active device using radial electric field piezo-diaphragm for sonic applications

NASA Technical Reports Server (NTRS)

Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor)

2005-01-01

An electro-active transducer for sonic applications includes a ferroelectric material sandwiched by first and second electrode patterns to form a piezo-diaphragm coupled to a mounting frame. When the device is used as a sonic actuator, the first and second electrode patterns are configured to introduce an electric field into the ferroelectric material when voltage is applied to the electrode patterns. When the device is used as a sonic sensor, the first and second electrode patterns are configured to introduce an electric field into the ferroelectric material when the ferroelectric material experiences deflection in a direction substantially perpendicular thereto. In each case, the electrode patterns are designed to cause the electric field to: i) originate at a region of the ferroelectric material between the first and second electrode patterns, and ii) extend radially outward from the region of the ferroelectric material (at which the electric field originates) and substantially parallel to the plane of the ferroelectric material. The mounting frame perimetrically surrounds the peizo-diaphragm and enables attachment of the piezo-diaphragm to a housing.

Semiconductor laser devices having lateral refractive index tailoring

DOEpatents

Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1990-01-01

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Semi-active control of helicopter vibration using controllable stiffness and damping devices

NASA Astrophysics Data System (ADS)

Anusonti-Inthra, Phuriwat

Semi-active concepts for helicopter vibration reduction are developed and evaluated in this dissertation. Semi-active devices, controllable stiffness devices or controllable orifice dampers, are introduced; (i) in the blade root region (rotor-based concept) and (ii) between the rotor and the fuselage as semi-active isolators (in the non-rotating frame). Corresponding semi-active controllers for helicopter vibration reduction are also developed. The effectiveness of the rotor-based semi-active vibration reduction concept (using stiffness and damping variation) is demonstrated for a 4-bladed hingeless rotor helicopter in moderate- to high-speed forward flight. A sensitivity study shows that the stiffness variation of root element can reduce hub vibrations when proper amplitude and phase are used. Furthermore, the optimal semi-active control scheme can determine the combination of stiffness variations that produce significant vibration reduction in all components of vibratory hub loads simultaneously. It is demonstrated that desired cyclic variations in properties of the blade root region can be practically achieved using discrete controllable stiffness devices and controllable dampers, especially in the flap and lag directions. These discrete controllable devices can produce 35--50% reduction in a composite vibration index representing all components of vibratory hub loads. No detrimental increases are observed in the lower harmonics of blade loads and blade response (which contribute to the dynamic stresses) and controllable device internal loads, when the optimal stiffness and damping variations are introduced. The effectiveness of optimal stiffness and damping variations in reducing hub vibration is retained over a range of cruise speeds and for variations in fundamental rotor properties. The effectiveness of the semi-active isolator is demonstrated for a simplified single degree of freedom system representing the semi-active isolation system. The rotor, represented by a lumped mass under harmonic force excitation, is supported by a spring and a parallel damper on the fuselage (assumed to have infinite mass). Properties of the spring or damper can then be controlled to reduce transmission of the force into the fuselage or the support structure. This semi-active isolation concept can produce additional 30% vibration reduction beyond the level achieved by a passive isolator. Different control schemes (i.e. open-loop, closed-loop, and closed-loop adaptive schemes) are developed and evaluated to control transmission of vibratory loads to the support structure (fuselage), and it is seen that a closed-loop adaptive controller is required to retain vibration reduction effectiveness when there is a change in operating condition. (Abstract shortened by UMI.)

Strain induced optical properties of BaReO3

NASA Astrophysics Data System (ADS)

Kumavat, Sandip R.; Kansara, Shivam; Gupta, Sanjeev K.; Sonvane, Yogesh

2018-05-01

Here, we have performed strain induce optical properties of BaReO3 by using density functional theory (DFT). We noticed that after applying intrinsic and extrinsic strain to the BaReO3, it shows the metallic behavior. We also studied optical properties, which show good activity in the ultraviolet region. The results show that after applying intrinsic and extrinsic strain to BaReO3 the absorption peaks are shifted towards the high UV region of the spectrum. Thus, we concluded that, BaReO3 material with extrinsic strain can be useful for high frequency UV device and optoelectronic devices.

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

NASA Astrophysics Data System (ADS)

Kruczek, T.; Leyman, R.; Carnegie, D.; Bazieva, N.; Erbert, G.; Schulz, S.; Reardon, C.; Reynolds, S.; Rafailov, E. U.

2012-08-01

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals' difference frequency ˜1 THz.

InGaP alpha voltaic batteries: Synthesis, modeling, and radiation tolerance

NASA Astrophysics Data System (ADS)

Cress, Cory D.; Landi, Brian J.; Raffaelle, Ryne P.; Wilt, David M.

2006-12-01

The viability of InGaP diodes coupled with α-particle sources as radioisotope power supplies is investigated both theoretically and experimentally. The electrical power output of epitaxially grown InGaP p-type/n-type (p/n) junction diodes coupled with Am241 and Po210 α-particle sources was measured. A theoretical model was developed that determines the α-particle energy deposition profile within an InGaP diode when irradiated by an omnidirectional α-particle source. The results of the model illustrate the dramatic influence the radiation source/diode configuration has on the α-particle energy deposition profile within a device. Progress has been shown towards increasing the radiation tolerance of the InGaP devices, which included utilizing an intrinsic region and reducing the junction thickness. Introduction of the intrinsic region within a conventional n /p diode to form a n-type/intrinsic/p-type diode enabled the device to withstand a ten times greater fluence of 4.2MeV α particles before decreasing to 50% of its original power output under simulated air mass zero illumination, when compared to an abrupt junction device with the same active region thickness.

The New Portable Transcutaneous Electrical Nerve Stimulation Device Was Efficacious in the Control of Primary Dysmenorrhea Cramp Pain.

PubMed

Lauretti, Gabriela R; Oliveira, Raquel; Parada, Flavia; Mattos, Anita L

2015-08-01

Transcutaneous electrical nerve stimulation (TENS) is an established method for pain relief in dysmenorrhea. A feasible advantage would be the study of a portable device. The purpose of the study was to evaluate the effectiveness and safety of a new portable TENS device (TANYX®) for menstruation cramps. Forty women were evaluated in a double-blind, prospective, randomized fashion, divided into sham and active groups. TENS was applied medially at the suprapubic region, for 30-min duration at eight-hour intervals, up to seven days. The placebo group (PG) received sham device. The TENS group (TG) applied an active 85 Hz frequency TENS. Efficacy measures were pain relief evaluated on a visual analog scale (VAS) and diclofenac intake, and quality of life represented by: 1) capacity to get out of the bed, 2) food or drink intake, 3) missing routine daily activities such as work or school, and 4) quality of sleep. The active TENS device induced a prompt onset of pain relief in a strictly segmental manner nearby the dermatomes where the TENS was applied at the skin, and there was a drop in mean pain score from 8 to 2 cm (p < 0.001). Diclofenac consumption was also significantly reduced (p < 0.01), compared with the PG. Quality of life improved significantly in TG when compared with PG (p < 0.05). Three months after the beginning of the study, 14/20 of the women were still using the active device regularly. No adverse effects were observed. The portable, disposable, active TENS device induced a prompt onset of pain relief and improved the quality of life, without adverse effects, in patients with painful cramps associated with dysmenorrhea. © 2015 International Neuromodulation Society.

A novel tetrode microdrive for simultaneous multi-neuron recording from different regions of primate brain.

PubMed

Santos, Lucas; Opris, Ioan; Fuqua, Joshua; Hampson, Robert E; Deadwyler, Sam A

2012-04-15

A unique custom-made tetrode microdrive for recording from large numbers of neurons in several areas of primate brain is described as a means for assessing simultaneous neural activity in cortical and subcortical structures in nonhuman primates (NHPs) performing behavioral tasks. The microdrive device utilizes tetrode technology with up to six ultra-thin microprobe guide tubes (0.1mm) that can be independently positioned, each containing reduced diameter tetrode and/or hexatrode microwires (0.02 mm) for recording and isolating single neuron activity. The microdrive device is mounted within the standard NHP cranial well and allows traversal of brain depths up to 40.0 mm. The advantages of this technology are demonstrated via simultaneously recorded large populations of neurons with tetrode type probes during task performance from a) primary motor cortex and deep brain structures (caudate-putamen and hippocampus) and b) multiple layers within the prefrontal cortex. The means to characterize interactions of well-isolated ensembles of neurons recorded simultaneously from different regions, as shown with this device, has not been previously available for application in primate brain. The device has extensive application to primate models for the detection and study of inoperative or maladaptive neural circuits related to human neurological disorders. Published by Elsevier B.V.

Sensitive detection of active Shiga toxin using low cost CCD based optical detector

USDA-ARS?s Scientific Manuscript database

To reduce the sources and incidence of food-borne illness there is a need to develop inexpensive sensitive devices for detection of active toxin, such as Shiga toxin type 2 (Stx2). This approach increases the availability of foodborne bacterial toxin diagnostics in regions where there are limited r...

Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy

NASA Astrophysics Data System (ADS)

Kindsmüller, A.; Schmitz, C.; Wiemann, C.; Skaja, K.; Wouters, D. J.; Waser, R.; Schneider, C. M.; Dittmann, R.

2018-04-01

The switching mechanism of valence change resistive memory devices is widely accepted to be an ionic movement of oxygen vacancies resulting in a valence change of the metal cations. However, direct experimental proofs of valence changes in memristive devices are scarce. In this work, we have employed hard X-ray photoelectron emission microscopy (PEEM) to probe local valence changes in Pt/ZrOx/Ta memristive devices. The use of hard X-ray radiation increases the information depth, thus providing chemical information from buried layers. By extracting X-ray photoelectron spectra from different locations in the PEEM images, we show that zirconia in the active device area is reduced compared to a neighbouring region, confirming the valence change in the ZrOx film during electroforming. Furthermore, we succeeded in measuring the Ta 4f spectrum for two different resistance states on the same device. In both states, as well as outside the device region, the Ta electrode is composed of different suboxides without any metallic contribution, hinting to the formation of TaOx during the deposition of the Ta thin film. We observed a reduction of the Ta oxidation state in the low resistance state with respect to the high resistive state. This observation is contradictory to the established model, as the internal redistribution of oxygen between ZrOx and the Ta electrode during switching would lead to an oxidation of the Ta layer in the low resistance state. Instead, we have to conclude that the Ta electrode takes an active part in the switching process in our devices and that oxygen is released and reincorporated in the ZrOx/TaOx bilayer during switching. This is confirmed by the degradation of the high resistance state during endurance measurements under vacuum.

Nanoimprinted High-Refractive Index Active Photonic Nanostructures Based on Quantum Dots for Visible Light

DOE PAGES

Pina-Hernandez, Carlos; Koshelev, Alexander; Dhuey, Scott; ...

2017-12-15

A novel method to realizing printed active photonic devices was developed using nanoimprint lithography (NIL), combining a printable high-refractive index material and colloidal CdSe/CdS quantum dots (QDs) for applications in the visible region. Active media QDs were applied in two different ways: embedded inside a printable high-refractive index matrix to form an active printable hybrid nanocomposite, and used as a uniform coating on top of printed photonic devices. As a proof-of-demonstration for printed active photonic devices, two-dimensional (2-D) photonic crystals as well as 1D and 2D photonic nanocavities were successfully fabricated following a simple reverse-nanoimprint process. We observed enhanced photoluminescencemore » from the 2D photonic crystal and the 1D nanocavities. Outstandingly, the process presented in this study is fully compatible with large-scale manufacturing where the patterning areas are only limited by the size of the corresponding mold. This work shows that the integration of active media and functional materials is a promising approach to the realization of integrated photonics for visible light using high throughput technologies. We believe that this work represents a powerful and cost-effective route for the development of numerous nanophotonic structures and devices that will lead to the emergence of new applications.« less

RF performances of inductors integrated on localized p+-type porous silicon regions

PubMed Central

2012-01-01

To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resonant frequencies obtained with the different substrates are presented. A first comparison is done between the performances of inductors integrated on same-thickness localized and full porous silicon sheet layers. The effect of the silicon regions in the decrease of performances of localized porous silicon is discussed. Then, the study shows that the localized porous silicon substrate significantly reduces losses in comparison with high-resistivity silicon or highly doped silicon bulks. These results are promising for the integration of both passive and active devices on the same silicon/porous silicon hybrid substrate. PMID:23009746

Improving car passengers' comfort and experience by supporting the use of handheld devices.

PubMed

van Veen, S A T; Hiemstra-van Mastrigt, S; Kamp, I; Vink, P

2014-01-01

There is a demand for interiors to support other activities in a car than controlling the vehicle. Currently, this is the case for the car passengers and--in the future--autonomous driving cars will also facilitate drivers to perform other activities. One of these activities is working with handheld devices. Previous research shows that people experience problems when using handheld devices in a moving vehicle and the use of handheld devices generally causes unwanted neck flexion [Young et al. 2012; Sin and Zu 2011; Gold et al.2011]. In this study, armrests are designed to support the arms when using handheld devices in a driving car in order to decrease neck flexion. Neck flexion was measured by attaching markers on the C7 and tragus. Discomfort was indicated on a body map on a scale 1-10. User experience was evaluated in a semi-structured interview. Neck flexion is significantly decreased by the support of the armrests and approaches a neutral position. Furthermore, overall comfort and comfort in the neck region specifically are significantly increased. Subjects appreciate the body posture facilitated by the armrests and 9 out of 10 prefer using handheld devices with the armrests compared to using handheld devices without the armrests. More efforts are needed to develop the mock-up into an established product, but the angles and dimensions presented in this study could serve as guidelines.

Reducing leakage current in semiconductor devices

DOEpatents

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

2018-03-06

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, R.P. Jr.; Crawford, M.H.

1996-09-17

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, Jr., Richard P.; Crawford, Mary H.

1996-01-01

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Electro-Active Transducer Using Radial Electric Field To Produce/Motion Sense Out-Of-Plane Transducer

NASA Technical Reports Server (NTRS)

Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor)

2006-01-01

An electro-active transducer includes a ferroelectric material sandwiched by first and second electrode patterns. When the device is used as an actuator, the first and second electrode patterns are configured to introduce an electric field into the ferroelectric material when voltage is applied to the electrode patterns. When the device is used as a sensor. the first and second electrode patterns are configured to introduce an electric field into the ferroelectric material when the ferroelectric material experiences deflection in a direction substantially perpendicular thereto. In each case, the electrode patterns are designed to cause the electric field to: i) originate at a region of the ferroelectric material between the first and second electrode patterns. and ii) extend radially outward from the region of the ferroelectric material (at which the electric field originates) and substantially parallel to the ferroelectric material s plane.

Color tunable monolithic InGaN/GaN LED having a multi-junction structure.

PubMed

Kong, Duk-Jo; Kang, Chang-Mo; Lee, Jun-Yeob; Kim, James; Lee, Dong-Seon

2016-03-21

In this study, we have fabricated a blue-green color-tunable monolithic InGaN/GaN LED having a multi-junction structure with three terminals. The device has an n-p-n structure consisting of a green and a blue active region, i.e., an n-GaN / blue-MQW / p-GaN / green-MQW / n-GaN / Al₂O₃ structure with three terminals for independently controlling the two active regions. To realize this LED structure, a typical LED consisting of layers of n-GaN, blue MQW, and p-GaN is regrown on a conventional green LED by using a metal organic chemical vapor deposition (MOCVD) method. We explain detailed mechanisms of three operation modes which are the green, blue, and cyan mode. Moreover, we discuss optical properties of the device.

Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices

NASA Astrophysics Data System (ADS)

Kurose, Noriko; Matsumoto, Kota; Yamada, Fumihiko; Roffi, Teuku Muhammad; Kamiya, Itaru; Iwata, Naotaka; Aoyagi, Yoshinobu

2018-01-01

A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a confined local area. The transition from an insulating to a p-type area is realized to take place within about 1-2 μm fine resolution. The results show that the technique can be applied in fabricating the devices such as vertical field effect transistors, vertical bipolar transistors and vertical Schottkey diode so on with a current confinement region using a p-type carrier-blocking layer formed by this technique.

Batch-fabricated high-performance graphene Hall elements

PubMed Central

Xu, Huilong; Zhang, Zhiyong; Shi, Runbo; Liu, Honggang; Wang, Zhenxing; Wang, Sheng; Peng, Lian-Mao

2013-01-01

Hall elements are by far the most widely used magnetic sensor. In general, the higher the mobility and the thinner the active region of the semiconductor used, the better the Hall device. While most common magnetic field sensors are Si-based Hall sensors, devices made from III-V compounds tend to favor over that based on Si. However these devices are more expensive and difficult to manufacture than Si, and hard to be integrated with signal-processing circuits for extending function and enforcing performance. In this article we show that graphene is intrinsically an ideal material for Hall elements which may harness the remarkable properties of graphene, i.e. extremely high carrier mobility and atomically thin active body, to create ideal magnetic sensors with high sensitivity, excellent linearity and remarkable thermal stability. PMID:23383375

CMOS Active Pixel Sensor Star Tracker with Regional Electronic Shutter

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly; Pain, Bedabrata; Staller, Craig; Clark, Christopher; Fossum, Eric

1996-01-01

The guidance system in a spacecraft determines spacecraft attitude by matching an observed star field to a star catalog....An APS(active pixel sensor)-based system can reduce mass and power consumption and radiation effects compared to a CCD(charge-coupled device)-based system...This paper reports an APS (active pixel sensor) with locally variable times, achieved through individual pixel reset (IPR).

All-optical photochromic spatial light modulators based on photoinduced electron transfer in rigid matrices

NASA Technical Reports Server (NTRS)

Beratan, David N. (Inventor); Perry, Joseph W. (Inventor)

1991-01-01

A single material (not a multi-element structure) spatial light modulator may be written to, as well as read out from, using light. The device has tailorable rise and hold times dependent on the composition and concentration of the molecular species used as the active components. The spatial resolution of this device is limited only by light diffraction as in volume holograms. The device may function as a two-dimensional mask (transmission or reflection) or as a three-dimensional volume holographic medium. This device, based on optically-induced electron transfer, is able to perform incoherent to coherent image conversion or wavelength conversion over a wide spectral range (ultraviolet, visible, or near-infrared regions).

Improving the vibration suppression capabilities of a magneto-rheological damper using hybrid active and semi-active control

NASA Astrophysics Data System (ADS)

Ullah Khan, Irfan; Wagg, David; Sims, Neil D.

2016-08-01

This paper presents a new hybrid active and semi-active control method for vibration suppression in flexible structures. The method uses a combination of a semi-active device and an active control actuator situated elsewhere in the structure to suppress vibrations. The key novelty is to use the hybrid controller to enable the magneto-rheological damper to achieve a performance as close to a fully active device as possible. This is achieved by ensuring that the active actuator can assist the magneto-rheological damper in the regions where energy is required. In addition, the hybrid active and semi-active controller is designed to minimize the switching of the semi-active controller. The control framework used is the immersion and invariance control technique in combination with sliding mode control. A two degree-of-freedom system with lightly damped resonances is used as an example system. Both numerical and experimental results are generated for this system, and then compared as part of a validation study. The experimental system uses hardware-in-the-loop to simulate the effect of both the degrees-of-freedom. The results show that the concept is viable both numerically and experimentally, and improved vibration suppression results can be obtained for the magneto-rheological damper that approach the performance of an active device.

The impact of HTA and procurement practices on the selection and prices of medical devices.

PubMed

Callea, Giuditta; Armeni, Patrizio; Marsilio, Marta; Jommi, Claudio; Tarricone, Rosanna

2017-02-01

Technological innovation in healthcare yields better health outcomes but also drives healthcare expenditure, and governments are struggling to maintain an appropriate balance between patient access to modern care and the economic sustainability of healthcare systems. Health Technology Assessment (HTA) and centralized procurement are increasingly used to govern the introduction and diffusion of new technologies in an effort to make access to innovation financially sustainable. However, little empirical evidence is available to determine how they affect the selection of new technologies and unit prices. This paper focuses on medical devices (MDs) and investigates the combined effect of various HTA governance models and procurement practices on the two steps of the MD purchasing process (i.e., selecting the product and setting the unit price). Our analyses are based on primary data collected through a national survey of Italian public hospitals. The Italian National Health Service is an ideal case study because it is highly decentralized and because regions have adopted different HTA governance models (i.e., regional, hospital-based, double-level or no HTA), often in combination with centralized regional procurement programs. Hence, the Italian case allows us to test the impact of different combinations of HTA models and procurement programs in the various regions. The results show that regional HTA increases the probability of purchasing the costliest devices, whereas hospital-based HTA functions more like a cost-containment unit. Centralized regional procurement does not significantly affect MD selection and is associated with a reduction in the MD unit price: on average, hospitals located in regions with centralized procurement pay 10.1% less for the same product. Hospitals located in regions with active regional HTA programs pay higher prices for the same device (+23.2% for inexpensive products), whereas hospitals that have developed internal HTA programs pay 8.3% on average more for the same product. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

An assessment of the hardness of miniature vacuum tubes to high-voltage transients

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orvis, W.J.

1990-03-01

Miniature vacuum tubes are vacuum switching and control devices fabricated on a silicon wafer, using the same technology as is used to make integrated circuits. They operate in much the same manner as conventional vacuum tubes, but with two important differences: they are micron sized devices, and they employ field emission instead of thermionic emission as the electron source. As these devices have a vacuum as their active region, they will be extremely hard to nuclear radiation and relatively insensitive to temperature effects, they are also expected to be extremely fast devices. We have estimated here that their hardness tomore » high-voltage transients will be at least as good as existing semiconductor devices and possibly better. 5 figs.« less

High Photoelectric Conversion Efficiency of Metal Phthalocyanine/Fullerene Heterojunction Photovoltaic Device

PubMed Central

Lin, Chi-Feng; Zhang, Mi; Liu, Shun-Wei; Chiu, Tien-Lung; Lee, Jiun-Haw

2011-01-01

This paper introduces the fundamental physical characteristics of organic photovoltaic (OPV) devices. Photoelectric conversion efficiency is crucial to the evaluation of quality in OPV devices, and enhancing efficiency has been spurring on researchers to seek alternatives to this problem. In this paper, we focus on organic photovoltaic (OPV) devices and review several approaches to enhance the energy conversion efficiency of small molecular heterojunction OPV devices based on an optimal metal-phthalocyanine/fullerene (C60) planar heterojunction thin film structure. For the sake of discussion, these mechanisms have been divided into electrical and optical sections: (1) Electrical: Modification on electrodes or active regions to benefit carrier injection, charge transport and exciton dissociation; (2) Optical: Optional architectures or infilling to promote photon confinement and enhance absorption. PMID:21339999

Electrical modulation of the complex refractive index in mid-infrared quantum cascade lasers.

PubMed

Teissier, J; Laurent, S; Manquest, C; Sirtori, C; Bousseksou, A; Coudevylle, J R; Colombelli, R; Beaudoin, G; Sagnes, I

2012-01-16

We have demonstrated an integrated three terminal device for the modulation of the complex refractive index of a distributed feedback quantum cascade laser (QCL). The device comprises an active region to produce optical gain vertically stacked with a control region made of asymmetric coupled quantum wells (ACQW). The optical mode, centered on the gain region, has a small overlap also with the control region. Owing to the three terminals an electrical bias can be applied independently on both regions: on the laser for producing optical gain and on the ACQW for tuning the energy of the intersubband transition. This allows the control of the optical losses at the laser frequency as the absorption peak associated to the intersubband transition can be electrically brought in and out the laser transition. By using this function a laser modulation depth of about 400 mW can be achieved by injecting less than 1 mW in the control region. This is four orders of magnitude less than the electrical power needed using direct current modulation and set the basis for the realisation of electrical to optical transducers.

[Regulatory Program for Medical Devices in Cuba: experiences and current challenges].

PubMed

Pereira, Dulce María Martínez; Rodríguez, Yadira Álvarez; Valdés, Yamila Cedeño; Ribas, Silvia Delgado

2016-05-01

Regulatory control of medical devices in Cuba is conducted through a system based on the Regulatory Program for Medical Devices as a way to ensure the safety, efficacy, and effectiveness of these technologies, which are in use by the National Health System. This program was launched in 1992, when the Regulations for State Evaluation and Registration of Medical Devices were approved. Its successive stages and the merging of regulatory activities for drugs and medical equipment have meant progress toward stronger, more transparent strategies and greater control of industry and the National Health System. Throughout its course the Cuban program has met with challenges and difficulties that it has addressed by drawing on its own experiences. During the new period, the greatest challenges revolve around ensuring that regulatory systems incorporate scientific evaluation, risk levels, maximum rigor through the use of technical standards, and the implementation of international recommendations, together with the application of the ISO 13485 certification scheme, enhanced market monitoring, and classification of medical devices in accordance with their relevance to the country's national health policies. From the regional standpoint, the greatest challenge lies in working toward regulatory convergence. The Collaborating Centre for the Regulation of Health Technologies will support the proposed regulatory strategy and established regional priorities, in particular in connection with the implementation of actions involving medical devices.

Human Vitronectin-Derived Peptide Covalently Grafted onto Titanium Surface Improves Osteogenic Activity: A Pilot In Vivo Study on Rabbits.

PubMed

Cacchioli, Antonio; Ravanetti, Francesca; Bagno, Andrea; Dettin, Monica; Gabbi, Carlo

2009-10-01

Peptide and protein exploitation for the biochemical functionalization of biomaterial surfaces allowed fabricating biomimetic devices able to evoke and promote specific and advantageous cell functions in vitro and in vivo. In particular, cell adhesion improvement to support the osseointegration of implantable devices has been thoroughly investigated. This study was aimed at checking the biological activity of the (351-359) human vitronectin precursor (HVP) sequence, mapped on the human vitronectin protein; the peptide was covalently linked to the surface of titanium cylinders, surgically inserted in the femurs of New Zealand white rabbits and analyzed at short experimental time points (4, 9, and 16 days after surgery). To assess the osteogenic activity of the peptide, three vital fluorochromic bone markers were used (calcein green, xylenol orange, and calcein blue) to stain the areas of newly grown bone. Static and dynamic histomorphometric parameters were measured at the bone-implant interface and at different distances from the surface. The biological role of the (351-359)HVP sequence was checked by comparing peptide-grafted samples and controls, analyzing how and how much its effects change with time across the bone regions surrounding the implant surface. The results obtained reveal a major activity of the investigated peptide 4 days after surgery, within the bone region closest to the implant surface, and larger bone to implant contact 9 and 16 days after surgery. Thus, improved primary fixation of endosseous devices can be foreseen, resulting in an increased osteointegration.

Morphological analysis of GeTe in inline phase change switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, Matthew R., E-mail: matthew.king2@ngc.com; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695; El-Hinnawy, Nabil

2015-09-07

Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined bymore » variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.« less

Accelerated life testing effects on CMOS microcircuit characteristics

NASA Technical Reports Server (NTRS)

1980-01-01

This report covers the time period from May 1976 to December 1979 and encompasses the three phases of accelerated testing: Phase 1, the 250 C testing; Phase 2, the 200 C testing; and Phase 3, the 125 C testing. The duration of the test in Phase 1 and Phase 2 was sufficient to take the devices into the wear out region. The wear out distributions were used to estimate the activation energy between the 250 C and the 200 C test temperatures. The duration of the 125 C test, 20,000 hours, was not sufficient to bring the test devices into the wear out region; consequently the third data point at 125 C for determining the consistency of activation energy could not be obtained. It was estimated that, for the most complex of the three device types, the activation energy between 200 C and 125 C should be at least as high as that between 250 C and 200 C. The practicality of the use of high temperature for the accelerated life tests from the point of view of durability of equipment was assessed. Guidelines for the development of accelerated life test conditions were proposed. The use of the silicon nitride overcoat to improve the high temperature accelerated life test characteristics of CMOS microcircuits was explored in Phase 4 of this study and is attached as an appendix to this report.

High voltage MOSFET devices and methods of making the devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+more » region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.« less

High voltage MOSFET devices and methods of making the devices

DOEpatents

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

2015-12-15

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Um, Jae Gwang; Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr

2015-06-21

We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model alsomore » shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.« less

Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance

DOEpatents

Zolper, John C.; Sherwin, Marc E.; Baca, Albert G.

2000-01-01

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

Monolithic integrated high-T.sub.c superconductor-semiconductor structure

NASA Technical Reports Server (NTRS)

Barfknecht, Andrew T. (Inventor); Garcia, Graham A. (Inventor); Russell, Stephen D. (Inventor); Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Clayton, Stanley R. (Inventor)

2000-01-01

A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

Effects of stochastic field lines on the pressure driven MHD instabilities in the Large Helical Device

NASA Astrophysics Data System (ADS)

Ohdachi, Satoshi; Watanabe, Kiyomasa; Sakakibara, Satoru; Suzuki, Yasuhiro; Tsuchiya, Hayato; Ming, Tingfeng; Du, Xiaodi; LHD Expriment Group Team

2014-10-01

In the Large Helical Device (LHD), the plasma is surrounded by the so-called magnetic stochastic region, where the Kolmogorov length of the magnetic field lines is very short, from several tens of meters and to thousands meters. Finite pressure gradient are formed in this region and MHD instabilities localized in this region is observed since the edge region of the LHD is always unstable against the pressure driven mode. Therefore, the saturation level of the instabilities is the key issue in order to evaluate the risk of this kind of MHD instabilities. The saturation level depends on the pressure gradient and on the magnetic Reynolds number; there results are similar to the MHD mode in the closed magnetic surface region. The saturation level in the stochastic region is affected also by the stocasticity itself. Parameter dependence of the saturation level of the MHD activities in the region is discussed in detail. It is supported by NIFS budget code ULPP021, 028 and is also partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Scientific Research 26249144, by the JSPS-NRF-NSFC A3 Foresight Program NSFC: No. 11261140328.

A multiscale quantum mechanics/electromagnetics method for device simulations.

PubMed

Yam, ChiYung; Meng, Lingyi; Zhang, Yu; Chen, GuanHua

2015-04-07

Multiscale modeling has become a popular tool for research applying to different areas including materials science, microelectronics, biology, chemistry, etc. In this tutorial review, we describe a newly developed multiscale computational method, incorporating quantum mechanics into electronic device modeling with the electromagnetic environment included through classical electrodynamics. In the quantum mechanics/electromagnetics (QM/EM) method, the regions of the system where active electron scattering processes take place are treated quantum mechanically, while the surroundings are described by Maxwell's equations and a semiclassical drift-diffusion model. The QM model and the EM model are solved, respectively, in different regions of the system in a self-consistent manner. Potential distributions and current densities at the interface between QM and EM regions are employed as the boundary conditions for the quantum mechanical and electromagnetic simulations, respectively. The method is illustrated in the simulation of several realistic systems. In the case of junctionless field-effect transistors, transfer characteristics are obtained and a good agreement between experiments and simulations is achieved. Optical properties of a tandem photovoltaic cell are studied and the simulations demonstrate that multiple QM regions are coupled through the classical EM model. Finally, the study of a carbon nanotube-based molecular device shows the accuracy and efficiency of the QM/EM method.

III-nitride quantum dots for ultra-efficient solid-state lighting

DOE PAGES

Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; ...

2016-05-23

III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of highermore » spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.« less

Fiberless multicolor neural optoelectrode for in vivo circuit analysis.

PubMed

Kampasi, Komal; Stark, Eran; Seymour, John; Na, Kyounghwan; Winful, Herbert G; Buzsáki, György; Wise, Kensall D; Yoon, Euisik

2016-08-03

Maximizing the potential of optogenetic approaches in deep brain structures of intact animals requires optical manipulation of neurons at high spatial and temporal resolutions, while simultaneously recording electrical data from those neurons. Here, we present the first fiber-less optoelectrode with a monolithically integrated optical waveguide mixer that can deliver multicolor light at a common waveguide port to achieve multicolor modulation of the same neuronal population in vivo. We demonstrate successful device implementation by achieving efficient coupling between a side-emitting injection laser diode (ILD) and a dielectric optical waveguide mixer via a gradient-index (GRIN) lens. The use of GRIN lenses attains several design features, including high optical coupling and thermal isolation between ILDs and waveguides. We validated the packaged devices in the intact brain of anesthetized mice co-expressing Channelrhodopsin-2 and Archaerhodopsin in pyramidal cells in the hippocampal CA1 region, achieving high quality recording, activation and silencing of the exact same neurons in a given local region. This fully-integrated approach demonstrates the spatial precision and scalability needed to enable independent activation and silencing of the same or different groups of neurons in dense brain regions while simultaneously recording from them, thus considerably advancing the capabilities of currently available optogenetic toolsets.

Broadly continuously tunable slot waveguide quantum cascade lasers based on a continuum-to-continuum active region design

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Bo; Zeng, Yong Quan; Liang, Guozhen

2015-09-14

We report our progress in the development of broadly tunable single-mode slot waveguide quantum cascade lasers based on a continuum-to-continuum active region design. The electroluminescence spectrum of the continuum-to-continuum active region design has a full width at half maximum of 440 cm{sup −1} at center wavelength ∼10 μm at room temperature (300 K). Devices using the optimized slot waveguide structure and the continuum-to-continuum design can be tuned continuously with a lasing emission over 42 cm{sup −1}, from 9.74 to 10.16 μm, at room temperature by using only current tuning scheme, together with a side mode suppression ratio of above 15 dB within the whole tuning range.

Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography

PubMed Central

Wang, Sheng-Wen; Hong, Kuo-Bin; Tsai, Yu-Lin; Teng, Chu-Hsiang; Tzou, An-Jye; Chu, You-Chen; Lee, Po-Tsung; Ku, Pei-Cheng; Lin, Chien-Chung; Kuo, Hao-Chung

2017-01-01

In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside the active region. Photoluminescence (PL) and time-resolved PL measurements indicated the lattice-mismatch induced strain inside the active region was relaxed when the wall width is reduced. Through the simulation, we can understand the strain distribution of active region inside NRLEDs. The simulation results not only revealed the exact distribution of strain but also predicted the trend of wavelength-shifted behavior of NRLEDs. Finally, the NRLEDs devices with four-color emission on the same wafer were demonstrated. PMID:28256529

Low-back electromyography (EMG) data-driven load classification for dynamic lifting tasks.

PubMed

Totah, Deema; Ojeda, Lauro; Johnson, Daniel D; Gates, Deanna; Mower Provost, Emily; Barton, Kira

2018-01-01

Numerous devices have been designed to support the back during lifting tasks. To improve the utility of such devices, this research explores the use of preparatory muscle activity to classify muscle loading and initiate appropriate device activation. The goal of this study was to determine the earliest time window that enabled accurate load classification during a dynamic lifting task. Nine subjects performed thirty symmetrical lifts, split evenly across three weight conditions (no-weight, 10-lbs and 24-lbs), while low-back muscle activity data was collected. Seven descriptive statistics features were extracted from 100 ms windows of data. A multinomial logistic regression (MLR) classifier was trained and tested, employing leave-one subject out cross-validation, to classify lifted load values. Dimensionality reduction was achieved through feature cross-correlation analysis and greedy feedforward selection. The time of full load support by the subject was defined as load-onset. Regions of highest average classification accuracy started at 200 ms before until 200 ms after load-onset with average accuracies ranging from 80% (±10%) to 81% (±7%). The average recall for each class ranged from 69-92%. These inter-subject classification results indicate that preparatory muscle activity can be leveraged to identify the intent to lift a weight up to 100 ms prior to load-onset. The high accuracies shown indicate the potential to utilize intent classification for assistive device applications. Active assistive devices, e.g. exoskeletons, could prevent back injury by off-loading low-back muscles. Early intent classification allows more time for actuators to respond and integrate seamlessly with the user.

Novel Design of Type I High Power Mid-IR Diode Lasers for Spectral Region 3 - 4.2 Microns

DTIC Science & Technology

2014-09-25

multifold improvement of the device characteristics. Cascade pumping was achieved utilizing efficient interband tunneling through "leaky" window in band...Initially cascade pumping scheme was applied to laser heterostructures utilizing gain sections based on either intersubband [1] or type-II interband ...active regions, metamorphic virtual substrate and cascade pumping scheme. Cascade pumping of type-I quantum well gain section opened the whole new

Single photon detection with self-quenching multiplication

NASA Technical Reports Server (NTRS)

Zheng, Xinyu (Inventor); Cunningham, Thomas J. (Inventor); Pain, Bedabrata (Inventor)

2011-01-01

A photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletion region and an undepletion region. The photoelectronic device can act as a single photon detector or a single carrier multiplier. The avalanche self-quenching process allows electrical field reduction in the multiplication region by movement of the multiplication carriers, thus quenching the avalanche.

Surface texture change on-demand and microfluidic devices based on thickness mode actuation of dielectric elastomer actuators (DEAs)

NASA Astrophysics Data System (ADS)

Ankit, Ankit; Nguyen, Anh Chien; Mathews, Nripan

2017-04-01

Tactile feedback devices and microfluidic devices have huge significance in strengthening the area of robotics, human machine interaction and low cost healthcare. Dielectric Elastomer Actuators (DEAs) are an attractive alternative for both the areas; offering the advantage of low cost and simplistic fabrication in addition to the high actuation strains. The inplane deformations produced by the DEAs can be used to produce out-of-plane deformations by what is known as the thickness mode actuation of DEAs. The thickness mode actuation is achieved by adhering a soft passive layer to the DEA. This enables a wide area of applications in tactile applications without the need of complex systems and multiple actuators. But the thickness mode actuation has not been explored enough to understand how the deformations can be improved without altering the material properties; which is often accompanied with increased cost and a trade off with other closely associated material properties. We have shown the effect of dimensions of active region and non-active region in manipulating the out-of-plane deformation. Making use of this, we have been able to demonstrate large area devices and complex patterns on the passive top layer for the surface texture change on-demand applications. We have also been able to demonstrate on-demand microfluidic channels and micro-chambers without the need of actually fabricating the channels; which is a cost incurring and cumbersome process.

A hysteretic model considering Stribeck effect for small-scale magnetorheological damper

NASA Astrophysics Data System (ADS)

Zhao, Yu-Liang; Xu, Zhao-Dong

2018-06-01

Magnetorheological (MR) damper is an ideal semi-active control device for vibration suppression. The mechanical properties of this type of devices show strong nonlinear characteristics, especially the performance of the small-scale dampers. Therefore, developing an ideal model that can accurately describe the nonlinearity of such device is crucial to control design. In this paper, the dynamic characteristics of a small-scale MR damper developed by our research group is tested, and the Stribeck effect is observed in the low velocity region. Then, an improved model based on sigmoid model is proposed to describe this Stribeck effect observed in the experiment. After that, the parameters of this model are identified by genetic algorithms, and the mathematical relationship between these parameters and the input current, excitation frequency and amplitude is regressed. Finally, the predicted forces of the proposed model are validated with the experimental data. The results show that this model can well predict the mechanical properties of the small-scale damper, especially the Stribeck effect in the low velocity region.

Periodic equivalence ratio modulation method and apparatus for controlling combustion instability

DOEpatents

Richards, George A.; Janus, Michael C.; Griffith, Richard A.

2000-01-01

The periodic equivalence ratio modulation (PERM) method and apparatus significantly reduces and/or eliminates unstable conditions within a combustion chamber. The method involves modulating the equivalence ratio for the combustion device, such that the combustion device periodically operates outside of an identified unstable oscillation region. The equivalence ratio is modulated between preselected reference points, according to the shape of the oscillation region and operating parameters of the system. Preferably, the equivalence ratio is modulated from a first stable condition to a second stable condition, and, alternatively, the equivalence ratio is modulated from a stable condition to an unstable condition. The method is further applicable to multi-nozzle combustor designs, whereby individual nozzles are alternately modulated from stable to unstable conditions. Periodic equivalence ratio modulation (PERM) is accomplished by active control involving periodic, low frequency fuel modulation, whereby low frequency fuel pulses are injected into the main fuel delivery. Importantly, the fuel pulses are injected at a rate so as not to affect the desired time-average equivalence ratio for the combustion device.

Improved selectivity from a wavelength addressable device for wireless stimulation of neural tissue

PubMed Central

Seymour, Elif Ç.; Freedman, David S.; Gökkavas, Mutlu; Özbay, Ekmel; Sahin, Mesut; Ünlü, M. Selim

2014-01-01

Electrical neural stimulation with micro electrodes is a promising technique for restoring lost functions in the central nervous system as a result of injury or disease. One of the problems related to current neural stimulators is the tissue response due to the connecting wires and the presence of a rigid electrode inside soft neural tissue. We have developed a novel, optically activated, microscale photovoltaic neurostimulator based on a custom layered compound semiconductor heterostructure that is both wireless and has a comparatively small volume (<0.01 mm3). Optical activation provides a wireless means of energy transfer to the neurostimulator, eliminating wires and the associated complications. This neurostimulator was shown to evoke action potentials and a functional motor response in the rat spinal cord. In this work, we extend our design to include wavelength selectivity and thus allowing independent activation of devices. As a proof of concept, we fabricated two different microscale devices with different spectral responsivities in the near-infrared region. We assessed the improved addressability of individual devices via wavelength selectivity as compared to spatial selectivity alone through on-bench optical measurements of the devices in combination with an in vivo light intensity profile in the rat cortex obtained in a previous study. We show that wavelength selectivity improves the individual addressability of the floating stimulators, thus increasing the number of devices that can be implanted in close proximity to each other. PMID:24600390

Variable Emittance Electrochromic Devices for Satellite Thermal Control

NASA Astrophysics Data System (ADS)

Demiryont, Hulya; Shannon, Kenneth C.

2007-01-01

An all-solid-state electrochromic device (ECD) was designed for electronic variable emissivity (VE) control. In this paper, a low weight (5g/m2) electrochromic thermal control device, the EclipseVEECD™, is detailed as a viable thermal control system for spacecraft outer surface temperatures. Discussion includes the technology's performance, satellite applications, and preparations for space based testing. This EclipseVEECD™ system comprises substrate/mirror electrode/active element/IR transparent electrode layers. This system tunes and modulates reflection/emittance from 5 μm to 15 μm region. Average reflectance/emittance modulation of the system from the 400 K to 250 K region is about 75%, while at room temperature (9.5 micron) reflectance/emittance is around 90%. Activation voltage of the EclipseVEECD™ is around ±1 Volt. The EclipseVEECD™ can be used as a smart thermal modulator for the thermal control of satellites and spacecraft by monitoring and adjusting the amount of energy emitted from the outer surfaces. The functionality of the EclipseVEECD™ was successfully demonstrated in vacuum using a multi-purpose heat dissipation/absorption test module, the EclipseHEAT™. The EclipseHEAT™ has been successfully flight checked and integrated onto the United States Naval Alchemy MidSTAR satellite, scheduled to launch December 2006.

A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

NASA Astrophysics Data System (ADS)

Katase, Takayoshi; Onozato, Takaki; Hirono, Misako; Mizuno, Taku; Ohta, Hiromichi

2016-05-01

Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

Controlled evacuation using the biocompatible and energy efficient microfluidic ejector.

PubMed

Lad, V N; Ralekar, Swati

2016-10-01

Development of controlled vacuum is having many applications in the realm of biotechnology, cell transfer, gene therapy, biomedical engineering and other engineering activities involving separation or chemical reactions. Here we show the controlled vacuum generation through a biocompatible, energy efficient, low-cost and flexible miniature device. We have designed and fabricated microfluidic devices from polydimethylsiloxane which are capable of producing vacuum at a highly controlled rate by using water as a motive fluid. Scrupulous removal of infected fluid/body fluid from the internal hemorrhage affected parts during surgical operations, gene manipulation, cell sorting, and other biomedical activities require complete isolation of the delicate cells or tissues adjacent to the targeted location. We demonstrate the potential of the miniature device to obtain controlled evacuation without the use of highly pressurized motive fluids. Water has been used as a motive liquid to eject vapor and liquid at ambient conditions through the microfluidic devices prepared using a low-cost fabrication method. The proposed miniature device may find applications in vacuum generation especially where the controlled rate of evacuation, and limited vacuum generation are of utmost importance in order to precisely protect the cells in the nearby region of the targeted evacuated area.

Sensing Human Activity: GPS Tracking

PubMed Central

van der Spek, Stefan; van Schaick, Jeroen; de Bois, Peter; de Haan, Remco

2009-01-01

The enhancement of GPS technology enables the use of GPS devices not only as navigation and orientation tools, but also as instruments used to capture travelled routes: as sensors that measure activity on a city scale or the regional scale. TU Delft developed a process and database architecture for collecting data on pedestrian movement in three European city centres, Norwich, Rouen and Koblenz, and in another experiment for collecting activity data of 13 families in Almere (The Netherlands) for one week. The question posed in this paper is: what is the value of GPS as ‘sensor technology’ measuring activities of people? The conclusion is that GPS offers a widely useable instrument to collect invaluable spatial-temporal data on different scales and in different settings adding new layers of knowledge to urban studies, but the use of GPS-technology and deployment of GPS-devices still offers significant challenges for future research. PMID:22574061

Design, fabrication, and characterization of polymer based bulk heterojunction solar cells with enhanced efficiencies

NASA Astrophysics Data System (ADS)

Lu, Haiwei

Polymer based bulk heterojunction (BHJ) solar cells offer promising technological advantages for actualization of low-cost and large-area fabrication on flexible substrates. To reach the envisaged market entry figure of 10% power conversion efficiency (PCE), it is crucial that more solar energy is utilized in the active layer, requiring both higher energy conversion efficiency and expansion of the absorption spectrum of the active layer to near infrared (NIR) region. The research introduced in this dissertation is an effort to increase PCE of solar cells from the aforementioned two directions. In the first method, carbon nanotubes (CNTs) were incorporated into polymer-fullerene BHJ solar cells to increase the hole-collection efficiency. Devices with CNT monolayer networks placed at different positions were fabricated, and the impact of CNTs on device performance was studied. It was demonstrated that CNTs placed on the hole-collection side of the device resulted in optimized performance, with PCE increased from 4% to 4.9%. To realize the controlled deposition of a uniform layer of CNTs on different positions, a mild plasma treatment of the active-layer was employed, and the influence of plasma treatment on device performance was also studied. In the second strategy, I developed an approach to expand the absorption spectrum to NIR region. In this case, hybrid polymer based BHJ solar cells composed of pyridine-capped PbS (PbS-py) quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) were proposed. With pyridines as capping ligands, devices showed superior performance compared to with conventionally used oleate agents. PbS QDs with bandgaps of ˜1.13-1.38 eV offered the advantage of energetically favorable charge separation between P3HT and PbS QDs for photoexcitons in both visible and NIR regions. It was also found that thermal annealing leads to the removal of excess and interfacial pyridine ligands in polymer/QDs composites, and thus provides intimate electrical contact between polymers and QDs. Upon incorporation of optimized amount of PbS QDs, PCE was enhanced as high as 160% compared to that of pure polymer. The research undertaken under the umbrella of this dissertation may offer promising potential for realization of affordable, clean, and readily available source of energy in the near future.

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

NASA Technical Reports Server (NTRS)

Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

2005-01-01

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

Effect of boundary treatments on quantum transport current in the Green's function and Wigner distribution methods for a nano-scale DG-MOSFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang Haiyan; Department of Mathematics and Statistics, University of North Carolina at Charlotte, Charlotte, NC 28223-0001; Cai Wei

2010-06-20

In this paper, we conduct a study of quantum transport models for a two-dimensional nano-size double gate (DG) MOSFET using two approaches: non-equilibrium Green's function (NEGF) and Wigner distribution. Both methods are implemented in the framework of the mode space methodology where the electron confinements below the gates are pre-calculated to produce subbands along the vertical direction of the device while the transport along the horizontal channel direction is described by either approach. Each approach handles the open quantum system along the transport direction in a different manner. The NEGF treats the open boundaries with boundary self-energy defined by amore » Dirichlet to Neumann mapping, which ensures non-reflection at the device boundaries for electron waves leaving the quantum device active region. On the other hand, the Wigner equation method imposes an inflow boundary treatment for the Wigner distribution, which in contrast ensures non-reflection at the boundaries for free electron waves entering the device active region. In both cases the space-charge effect is accounted for by a self-consistent coupling with a Poisson equation. Our goals are to study how the device boundaries are treated in both transport models affects the current calculations, and to investigate the performance of both approaches in modeling the DG-MOSFET. Numerical results show mostly consistent quantum transport characteristics of the DG-MOSFET using both methods, though with higher transport current for the Wigner equation method, and also provide the current-voltage (I-V) curve dependence on various physical parameters such as the gate voltage and the oxide thickness.« less

Performance analysis of GeSn-alloy-based multiple quantum well transistor laser

NASA Astrophysics Data System (ADS)

Ranjan, Ravi; Pareek, Prakash; Anwer Askari, Syed Sadique; Das, Mukul K.

2018-02-01

The Group IV Photonics (GFP) which include an alloy of Si, Ge & Sn that gives a direct bandgap material (GeSn, SiGeSn) in near and mid-IR region used as an active material in photonics devices. The multiple quantum well SiGeSn/GeSn transistor laser structure is considered in this paper and performance parameters are evaluated for the same. The result shows that the threshold base current density (2.6 kA/cm2) for the proposed device initially decreases with increasing number of quantum well (QW) and later on it saturates. The current gain and output photon density of the device decreases and increases respectively, with increasing number of QW.

Method for making a monolithic integrated high-T.sub.c superconductor-semiconductor structure

NASA Technical Reports Server (NTRS)

Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Russell, Stephen D. (Inventor); Garcia, Graham A. (Inventor); Barfknecht, Andrew T. (Inventor); Clayton, Stanley R. (Inventor)

2000-01-01

A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

Planar multijunction high voltage solar cells

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Chai, A. T.; Goradia, C.

1980-01-01

Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

The planar multijunction cell - A new solar cell for earth and space

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Chai, A.-T.; Goradia, C.

1980-01-01

A new family of high-voltage solar cells, called the planar multijunction (PMJ) cell is being developed. The new cells combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell area. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

Ultra-wideband WDM VCSEL arrays by lateral heterogeneous integration

NASA Astrophysics Data System (ADS)

Geske, Jon

Advancements in heterogeneous integration are a driving factor in the development of evermore sophisticated and functional electronic and photonic devices. Such advancements will merge the optical and electronic capabilities of different material systems onto a common integrated device platform. This thesis presents a new lateral heterogeneous integration technology called nonplanar wafer bonding. The technique is capable of integrating multiple dissimilar semiconductor device structures on the surface of a substrate in a single wafer bond step, leaving different integrated device structures adjacent to each other on the wafer surface. Material characterization and numerical simulations confirm that the material quality is not compromised during the process. Nonplanar wafer bonding is used to fabricate ultra-wideband wavelength division multiplexed (WDM) vertical-cavity surface-emitting laser (VCSEL) arrays. The optically-pumped VCSEL arrays span 140 nm from 1470 to 1610 nm, a record wavelength span for devices operating in this wavelength range. The array uses eight wavelength channels to span the 140 nm with all channels separated by precisely 20 nm. All channels in the array operate single mode to at least 65°C with output power uniformity of +/- 1 dB. The ultra-wideband WDM VCSEL arrays are a significant first step toward the development of a single-chip source for optical networks based on coarse WDM (CWDM), a low-cost alternative to traditional dense WDM. The CWDM VCSEL arrays make use of fully-oxidized distributed Bragg reflectors (DBRs) to provide the wideband reflectivity required for optical feedback and lasing across 140 rim. In addition, a novel optically-pumped active region design is presented. It is demonstrated, with an analytical model and experimental results, that the new active-region design significantly improves the carrier uniformity in the quantum wells and results in a 50% lasing threshold reduction and a 20°C improvement in the peak operating temperature of the devices. This thesis investigates the integration and fabrication technologies required to fabricate ultra-wideband WDM VCSEL arrays. The complete device design and fabrication process is presented along with actual device results from completed CWDM VCSEL arrays. Future recommendations for improvements are presented, along with a roadmap toward a final electrically-pumped single-chip source for CWDM applications.

A Study of Mid-IR Laser Active Regions

DTIC Science & Technology

2003-05-01

together with the best fit obtained by using x and the layer thickness as fitting parameters. The fit, performed using the Takagi- Taupin dynamical...devices, Shun Lien Chuang, Wiley Inter. Science, 185 (1995) vii Takagi- Taupin X-ray scattering equations of dynamical diffraction, Rads Mercury v3.7, Bede

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dr. Ricardo Maqueda; Dr. Fred M. Levinton

Nova Photonics, Inc. has a collaborative effort at the National Spherical Torus Experiment (NSTX). This collaboration, based on fast imaging of visible phenomena, has provided key insights on edge turbulence, intermittency, and edge phenomena such as edge localized modes (ELMs) and multi-faceted axisymmetric radiation from the edge (MARFE). Studies have been performed in all these areas. The edge turbulence/intermittency studies make use of the Gas Puff Imaging diagnostic developed by the Principal Investigator (Ricardo Maqueda) together with colleagues from PPPL. This effort is part of the International Tokamak Physics Activity (ITPA) edge, scrape-off layer and divertor group joint activity (DSOL-15:more » Inter-machine comparison of blob characteristics). The edge turbulence/blob study has been extended from the current location near the midplane of the device to the lower divertor region of NSTX. The goal of this effort was to study turbulence born blobs in the vicinity of the X-point region and their circuit closure on divertor sheaths or high density regions in the divertor. In the area of ELMs and MARFEs we have studied and characterized the mode structure and evolution of the ELM types observed in NSTX, as well as the study of the observed interaction between MARFEs and ELMs. This interaction could have substantial implications for future devices where radiative divertor regions are required to maintain detachment from the divertor plasma facing components.« less

InAs based terahertz quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brandstetter, Martin, E-mail: martin.brandstetter@tuwien.ac.at; Kainz, Martin A.; Krall, Michael

2016-01-04

We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAs{sub 0.16}Sb{sub 0.84} heterostructures. Due to the lower effective electron mass, InAs based active regions are expected to provide a higher optical gain compared to structures consisting of GaAs or InGaAs. The growth by molecular beam epitaxy enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well resonant phonon depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applyingmore » a magnetic field perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of InAs based active regions for terahertz quantum cascade lasers, potentially enabling higher operating temperatures.« less

Responding to the health and rehabilitation needs of people with disabilities post-Haiyan

PubMed Central

Kleinitz, Pauline; Calina, Liezel; Alcido, Ma Rowena; Gohy, Bérengère; Hall, Julie Lyn

2015-01-01

Introduction It is estimated that 15% of the world’s population has a disability, and disasters increase their risk and vulnerability. Rehabilitation services were limited in the area of the Philippines that was affected by Typhoon Haiyan. This study describes the initial rehabilitation needs assessment and activities to increase rehabilitation services conducted in Leyte province of Region 8 after Haiyan. Method A rehabilitation needs assessment for people with disabilities and injuries needing physical and functional rehabilitation care and assistive devices was conducted in health facilities, evacuation centres and selected municipalities in Leyte province between 9 November 2013 and 30 April 2014 by a consortium of agencies. Improvements to service delivery and referrals were documented. Results Rehabilitation services were reduced immediately after Haiyan, but they increased in the following months and peaked four months after Haiyan. There were 2998 individuals needing medicine and rehabilitation management, functional care and assistive devices. These included persons with pre-existing disabilities whose situations had worsened and people who had sustained injuries in the typhoon. Additional improvements included rehabilitation services with provision of assistive devices at the regional hospital, development of a directory of disability services in the region and advocacy through community-based rehabilitation. Discussion Information services and community knowledge for people with disabilities improved in Region 8 after Typhoon Haiyan, demonstrating that strengthening rehabilitation systems is a realistic goal after disasters. PMID:26767137

Responding to the health and rehabilitation needs of people with disabilities post-Haiyan.

PubMed

Benigno, Mylene Rose; Kleinitz, Pauline; Calina, Liezel; Alcido, Ma Rowena; Gohy, Bérengère; Hall, Julie Lyn

2015-01-01

It is estimated that 15% of the world's population has a disability, and disasters increase their risk and vulnerability. Rehabilitation services were limited in the area of the Philippines that was affected by Typhoon Haiyan. This study describes the initial rehabilitation needs assessment and activities to increase rehabilitation services conducted in Leyte province of Region 8 after Haiyan. A rehabilitation needs assessment for people with disabilities and injuries needing physical and functional rehabilitation care and assistive devices was conducted in health facilities, evacuation centres and selected municipalities in Leyte province between 9 November 2013 and 30 April 2014 by a consortium of agencies. Improvements to service delivery and referrals were documented. Rehabilitation services were reduced immediately after Haiyan, but they increased in the following months and peaked four months after Haiyan. There were 2998 individuals needing medicine and rehabilitation management, functional care and assistive devices. These included persons with pre-existing disabilities whose situations had worsened and people who had sustained injuries in the typhoon. Additional improvements included rehabilitation services with provision of assistive devices at the regional hospital, development of a directory of disability services in the region and advocacy through community-based rehabilitation. Information services and community knowledge for people with disabilities improved in Region 8 after Typhoon Haiyan, demonstrating that strengthening rehabilitation systems is a realistic goal after disasters.

Charge injection and transport properties of an organic light-emitting diode

PubMed Central

Juhasz, Peter; Nevrela, Juraj; Micjan, Michal; Novota, Miroslav; Uhrik, Jan; Stuchlikova, Lubica; Jakabovic, Jan; Harmatha, Ladislav

2016-01-01

Summary The charge behavior of organic light emitting diode (OLED) is investigated by steady-state current–voltage technique and impedance spectroscopy at various temperatures to obtain activation energies of charge injection and transport processes. Good agreement of activation energies obtained by steady-state and frequency-domain was used to analyze their contributions to the charge injection and transport. We concluded that charge is injected into the OLED device mostly through the interfacial states at low voltage region, whereas the thermionic injection dominates in the high voltage region. This comparison of experimental techniques demonstrates their capabilities of identification of major bottleneck of charge injection and transport. PMID:26925351

Positron emission reconstruction tomography for the assessment of regional myocardial metabolism by the administration of substrates labeled with cyclotron produced radionuclides

NASA Technical Reports Server (NTRS)

Ter-Pogossian, M. M.; Hoffman, E. J.; Weiss, E. S.; Coleman, R. E.; Phelps, M. E.; Welch, M. J.; Sobel, B. E.

1975-01-01

A positron emission transverse tomograph device was developed which provides transaxial sectional images of the distribution of positron-emitting radionuclides in the heart. The images provide a quantitative three-dimensional map of the distribution of activity unencumbered by the superimposition of activity originating from regions overlying and underlying the plane of interest. PETT is used primarily with the cyclotron-produced radionuclides oxygen-15, nitrogen-13 and carbon-11. Because of the participation of these atoms in metabolism, they can be used to label metabolic substrates and intermediary molecules incorporated in myocardial metabolism.

Low-back electromyography (EMG) data-driven load classification for dynamic lifting tasks

PubMed Central

Ojeda, Lauro; Johnson, Daniel D.; Gates, Deanna; Mower Provost, Emily; Barton, Kira

2018-01-01

Objective Numerous devices have been designed to support the back during lifting tasks. To improve the utility of such devices, this research explores the use of preparatory muscle activity to classify muscle loading and initiate appropriate device activation. The goal of this study was to determine the earliest time window that enabled accurate load classification during a dynamic lifting task. Methods Nine subjects performed thirty symmetrical lifts, split evenly across three weight conditions (no-weight, 10-lbs and 24-lbs), while low-back muscle activity data was collected. Seven descriptive statistics features were extracted from 100 ms windows of data. A multinomial logistic regression (MLR) classifier was trained and tested, employing leave-one subject out cross-validation, to classify lifted load values. Dimensionality reduction was achieved through feature cross-correlation analysis and greedy feedforward selection. The time of full load support by the subject was defined as load-onset. Results Regions of highest average classification accuracy started at 200 ms before until 200 ms after load-onset with average accuracies ranging from 80% (±10%) to 81% (±7%). The average recall for each class ranged from 69–92%. Conclusion These inter-subject classification results indicate that preparatory muscle activity can be leveraged to identify the intent to lift a weight up to 100 ms prior to load-onset. The high accuracies shown indicate the potential to utilize intent classification for assistive device applications. Significance Active assistive devices, e.g. exoskeletons, could prevent back injury by off-loading low-back muscles. Early intent classification allows more time for actuators to respond and integrate seamlessly with the user. PMID:29447252

Interband cascade (IC) photovoltaic (PV) architecture for PV devices

DOEpatents

Yang, Rui Q.; Tian, Zhaobing; Mishima, Tetsuya D.; Santos, Michael B.; Johnson, Matthew B.; Klem, John F.

2015-10-20

A photovoltaic (PV) device, comprising a PV interband cascade (IC) stage, wherein the IC PV stage comprises an absorption region with a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier. An IC PV architecture for a photovoltaic device, the IC PV architecture comprising an absorption region, an intraband transport region coupled to the absorption region, and an interband tunneling region coupled to the intraband transport region and to the adjacent absorption region, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.

Therapeutic Devices for Epilepsy

PubMed Central

Fisher, Robert S.

2011-01-01

Therapeutic devices provide new options for treating drug-resistant epilepsy. These devices act by a variety of mechanisms to modulate neuronal activity. Only vagus nerve stimulation, which continues to develop new technology, is approved for use in the United States. Deep brain stimulation (DBS) of anterior thalamus for partial epilepsy recently was approved in Europe and several other countries. Responsive neurostimulation, which delivers stimuli to one or two seizure foci in response to a detected seizure, recently completed a successful multicenter trial. Several other trials of brain stimulation are in planning or underway. Transcutaneous magnetic stimulation (TMS) may provide a noninvasive method to stimulate cortex. Controlled studies of TMS split on efficacy, and may depend on whether a seizure focus is near a possible region for stimulation. Seizure detection devices in the form of “shake” detectors via portable accelerometers can provide notification of an ongoing tonic-clonic seizure, or peace of mind in the absence of notification. Prediction of seizures from various aspects of EEG is in early stages. Prediction appears to be possible in a subpopulation of people with refractory seizures and a clinical trial of an implantable prediction device is underway. Cooling of neocortex or hippocampus reversibly can attenuate epileptiform EEG activity and seizures, but engineering problems remain in its implementation. Optogenetics is a new technique that can control excitability of specific populations of neurons with light. Inhibition of epileptiform activity has been demonstrated in hippocampal slices, but use in humans will require more work. In general, devices provide useful palliation for otherwise uncontrollable seizures, but with a different risk profile than with most drugs. Optimizing the place of devices in therapy for epilepsy will require further development and clinical experience. PMID:22367987

Behavior of MHD Instabilities of the Large Helical Device near the Effective Plasma Boundary in the Magnetic Stochastic Region

NASA Astrophysics Data System (ADS)

Ohdachi, S.; Suzuki, Y.; Sakakibara, S.; Watanabe, K. Y.; Ida, K.; Goto, M.; Du, X. D.; Narushima, Y.; Takemura, Y.; Yamada, H.

In the high beta experiments of the Large Helical Device (LHD), the plasma tends to expand from the last closed flux surface (LCFS) determined by the vacuum magnetic field. The pressure/temperature gradient in the external region is finite. The scale length of the pressure profile does not change so much even when the mean free path of electrons exceeds the connection length of the magnetic field line to the wall. There appear MHD instabilities with amplitude of 10-4 of the toroidal magnetic field. From the mode number of the activities (m/n = 2/3, 1/2, 2/4), the location of the corresponding rational surface is outside the vacuum LCFS. The location of the mode is consistent with the fluctuation measurement, e.g., soft X-ray detector arrays. The MHD mode localized in the magnetic stochastic region is affected by the magnetic field structure estimated by the connection length to the wall using 3D equilibrium calculation.

Adaptive Mesh Refinement for Microelectronic Device Design

NASA Technical Reports Server (NTRS)

Cwik, Tom; Lou, John; Norton, Charles

1999-01-01

Finite element and finite volume methods are used in a variety of design simulations when it is necessary to compute fields throughout regions that contain varying materials or geometry. Convergence of the simulation can be assessed by uniformly increasing the mesh density until an observable quantity stabilizes. Depending on the electrical size of the problem, uniform refinement of the mesh may be computationally infeasible due to memory limitations. Similarly, depending on the geometric complexity of the object being modeled, uniform refinement can be inefficient since regions that do not need refinement add to the computational expense. In either case, convergence to the correct (measured) solution is not guaranteed. Adaptive mesh refinement methods attempt to selectively refine the region of the mesh that is estimated to contain proportionally higher solution errors. The refinement may be obtained by decreasing the element size (h-refinement), by increasing the order of the element (p-refinement) or by a combination of the two (h-p refinement). A successful adaptive strategy refines the mesh to produce an accurate solution measured against the correct fields without undue computational expense. This is accomplished by the use of a) reliable a posteriori error estimates, b) hierarchal elements, and c) automatic adaptive mesh generation. Adaptive methods are also useful when problems with multi-scale field variations are encountered. These occur in active electronic devices that have thin doped layers and also when mixed physics is used in the calculation. The mesh needs to be fine at and near the thin layer to capture rapid field or charge variations, but can coarsen away from these layers where field variations smoothen and charge densities are uniform. This poster will present an adaptive mesh refinement package that runs on parallel computers and is applied to specific microelectronic device simulations. Passive sensors that operate in the infrared portion of the spectrum as well as active device simulations that model charge transport and Maxwell's equations will be presented.

Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

NASA Astrophysics Data System (ADS)

Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin

2017-02-01

This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm2/V·s) compared with the ITZO-only TFTs (∼34 cm2/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and -2.39 V compared with 6.10 and -6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of EA were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO2 reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

Semiconductor devices having a recessed electrode structure

DOEpatents

Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

2015-05-26

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Global cardiovascular device innovation: Japan-USA synergies: Harmonization by Doing (HBD) program, a consortium of regulatory agencies, medical device industry, and academic institutions.

PubMed

Uchida, Takahiro; Ikeno, Fumiaki; Ikeda, Koji; Suzuki, Yuka; Todaka, Koji; Yokoi, Hiroyoshi; Thompson, Gary; Krucoff, Mitchel; Saito, Shigeru

2013-01-01

Global medical devices have become more popular, but investment money for medical device development is not easily available in the market. Worldwide health-care budget constraints mean that efficient medical device development has become essential. To achieve efficient development, globalization is a key to success. Spending large amounts of money in different regions for medical device development is no longer feasible. In order to streamline processes of global medical device development, an academic, governmental, and industrial consortium, called the Harmonization by Doing program, has been set up. The program has been operating between Japan and the USA since 2003. The program has 4 working groups: (1) Global Cardiovascular Device Trials; (2) Study on Post-Market Registry; (3) Clinical Trials; and (4) Infrastructure and Methodology Regulatory Convergence and Communication. Each working group has as its goals the achievement of speedy and efficient medical device development in Japan and the USA. The program has held multiple international meetings to deal with obstacles against efficient medical device development. This kind of program is very important to deliver novel medical devices. Involvement of physicians in this type of activity is also very helpful to achieve these goals.

Fiberless multicolor neural optoelectrode for in vivo circuit analysis

PubMed Central

Kampasi, Komal; Stark, Eran; Seymour, John; Na, Kyounghwan; Winful, Herbert G.; Buzsáki, György; Wise, Kensall D.; Yoon, Euisik

2016-01-01

Maximizing the potential of optogenetic approaches in deep brain structures of intact animals requires optical manipulation of neurons at high spatial and temporal resolutions, while simultaneously recording electrical data from those neurons. Here, we present the first fiber-less optoelectrode with a monolithically integrated optical waveguide mixer that can deliver multicolor light at a common waveguide port to achieve multicolor modulation of the same neuronal population in vivo. We demonstrate successful device implementation by achieving efficient coupling between a side-emitting injection laser diode (ILD) and a dielectric optical waveguide mixer via a gradient-index (GRIN) lens. The use of GRIN lenses attains several design features, including high optical coupling and thermal isolation between ILDs and waveguides. We validated the packaged devices in the intact brain of anesthetized mice co-expressing Channelrhodopsin-2 and Archaerhodopsin in pyramidal cells in the hippocampal CA1 region, achieving high quality recording, activation and silencing of the exact same neurons in a given local region. This fully-integrated approach demonstrates the spatial precision and scalability needed to enable independent activation and silencing of the same or different groups of neurons in dense brain regions while simultaneously recording from them, thus considerably advancing the capabilities of currently available optogenetic toolsets. PMID:27485264

Type-II Superlattice Avalanche Photodiodes

NASA Astrophysics Data System (ADS)

Huang, Jun

Type-II superlattice avalanche photodiodes have shown advantages compared to conventional mercury cadmium telluride photodiodes for infrared wavelength detection. However, surface or interface leakage current has been a major issue for superlattice avalanche photodiodes, especially in infrared wavelength region. First, passivation of the superlattice device with ammonium sulfide and thioacetamide was carried out, and its surface quality was studied by X-ray Photoelectron Spectroscopy. The study showed that both ammonium sulfide and thiacetamide passivation can actively remove the native oxide at the surface. Thiacetamide passivation combine more sulfur bonds with III-V elements than that of ammonium sulfide. Another X-ray photoelectron spectra of thiacetamide-treated atomic layer deposited zinc sulfide capped InAs/GaSb superlattice was performed to investigate the interface sulfur bond conditions. Sb--S and As--S bonds disappear while In-S bond gets enhanced, indicating that Indium Sulfide should be the major components at the interface after ZnS deposition. Second, the simulation of electrical characteristics for zinc sulfide, silicon nitride and silicon dioxide passivated superlattice devices was performed by SILVACO software to fit the experimental results and to discover the surface current mechanism. Different surface current mechanism strengths were found. Third, several novel dual-carrier avalanche photodiode structures were designed and simulated. The structures had alternate carrier multiplication regions, placed next to a wider electron multiplication region, creating dual-carrier multiplication feedback systems. Gain and excess noise factor of these structures were simulated and compared based on the dead space multiplication theory under uniform electric field. From the simulation, the applied bias can be greatly lowered or the thickness can be shrunk to achieve the same gain from the conventional device. The width of the thin region was the most critical parameter determining the device performance.

Micromachined structures for vertical microelectrooptical devices on InP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seassal, C.; Leclercq, J.L.; Letartre, X.

1996-12-31

The authors presented a microstructuring method in order to fabricate tunable vertical resonant cavity optical devices. PL characterizations were performed on a test structure in order to evaluate the effect of the cavity thickness on the peak characteristics. Modeling of the mechanical, electrostatic, and optical behavior of the device, PL simulation were performed, and showed a good agreement with the experiments. This is a first preliminary validation of InP-based MOEMS for further realization of tunable wavelength-selective passive filters, or photodiodes and lasers by incorporating active region within the cavity. Micro-reflectivity measurements with a spatial resolution of 20 {micro}m are underwaymore » in their group, in order to measure directly the resonance shift and spectral linewidth.« less

Microcontroller based fibre-optic visual presentation system for multisensory neuroimaging.

PubMed

Kurniawan, Veldri; Klemen, Jane; Chambers, Christopher D

2011-10-30

Presenting visual stimuli in physical 3D space during fMRI experiments carries significant technical challenges. Certain types of multisensory visuotactile experiments and visuomotor tasks require presentation of visual stimuli in peripersonal space, which cannot be accommodated by ordinary projection screens or binocular goggles. However, light points produced by a group of LEDs can be transmitted through fibre-optic cables and positioned anywhere inside the MRI scanner. Here we describe the design and implementation of a microcontroller-based programmable digital device for controlling fibre-optically transmitted LED lights from a PC. The main feature of this device is the ability to independently control the colour, brightness, and timing of each LED. Moreover, the device was designed in a modular and extensible way, which enables easy adaptation for various experimental paradigms. The device was tested and validated in three fMRI experiments involving basic visual perception, a simple colour discrimination task, and a blocked multisensory visuo-tactile task. The results revealed significant lateralized activation in occipital cortex of all participants, a reliable response in ventral occipital areas to colour stimuli elicited by the device, and strong activations in multisensory brain regions in the multisensory task. Overall, these findings confirm the suitability of this device for presenting complex fibre-optic visual and cross-modal stimuli inside the scanner. Copyright © 2011 Elsevier B.V. All rights reserved.

4.3 μm quantum cascade detector in pixel configuration.

PubMed

Harrer, A; Schwarz, B; Schuler, S; Reininger, P; Wirthmüller, A; Detz, H; MacFarland, D; Zederbauer, T; Andrews, A M; Rothermund, M; Oppermann, H; Schrenk, W; Strasser, G

2016-07-25

We present the design simulation and characterization of a quantum cascade detector operating at 4.3μm wavelength. Array integration and packaging processes were investigated. The device operates in the 4.3μm CO₂ absorption region and consists of 64 pixels. The detector is designed fully compatible to standard processing and material growth methods for scalability to large pixel counts. The detector design is optimized for a high device resistance at elevated temperatures. A QCD simulation model was enhanced for resistance and responsivity optimization. The substrate illuminated pixels utilize a two dimensional Au diffraction grating to couple the light to the active region. A single pixel responsivity of 16mA/W at room temperature with a specific detectivity D^* of 5⋅10⁷ cmHz/W was measured.

Toward a fully integrated wireless wearable EEG-NIRS bimodal acquisition system.

PubMed

Safaie, J; Grebe, R; Abrishami Moghaddam, H; Wallois, F

2013-10-01

Interactions between neuronal electrical activity and regional changes in microcirculation are assumed to play a major role in physiological brain activity and the development of pathological disorders, but have been poorly elucidated to date. There is a need for advanced diagnostic tools to investigate the relationships between these two physiological processes. To meet these needs, a wireless wearable system has been developed, which combines a near infrared spectroscopy (NIRS) system using light emitting diodes (LEDs) as a light source and silicon photodiodes as a detector with an integrated electroencephalography (EEG) system. The main advantages over currently available devices are miniaturization and integration of a real-time electrical and hemodynamic activity monitor into one wearable device. For patient distributed monitoring and creating a body-area network, up to seven same devices can be connected to a single base station (PC) synchronously. Each node presents enhanced portability due to the wireless communication and highly integrated components resulting in a small, lightweight signal acquisition device. Further progress includes the individual control of LEDs output to automatically or interactively adjust emitted light to the actual local situation online, the use of silicon photodiodes with a safe low-voltage power supply, and an integrated three dimensional accelerometer for movement detection for the identification of motion artifacts. The device was tested and validated using our enhanced EEG-NIRS tissue mimicking fluid phantom for sensitivity mapping. Typical somatotopic electrical evoked potential experiments were performed to verify clinical applicability.

Substrate structures for InP-based devices

DOEpatents

Wanlass, Mark W.; Sheldon, Peter

1990-01-01

A substrate structure for an InP-based semiconductor device having an InP based film is disclosed. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at one end to the GaAs layer and substantially lattice-matched at the opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.

Applications of Gunn lasers

NASA Astrophysics Data System (ADS)

Balkan, N.; Chung, S. H.

2008-04-01

The principle of the operation of a Gunn laser is based on the band to band recombination of impact ionized non-equilibrium electron-hole pairs in propagating high field space-charge domains in a Gunn diode, which is biased above the negative differential resistance threshold and placed in a Fabry-Perot or a vertical micro cavity (VCSEL). In conventional VCSEL structures, unless specific measures such as the addition of oxide apertures and use of small windows are employed, the lack of uniformity in the density of current injected into the active region can reduce the efficiency and delay the lasing threshold. In a vertical-cavity structured Gunn device, however, the current is uniformly injected into the active region independently of the distributed Bragg reflector (DBR) layers. Therefore, lasing occurs from the entire surface of the device. The light emission from Gunn domains is an electric field induced effect. Therefore, the operation of Gunn-VCSEL or F-P laser is independent of the polarity of the applied voltage. Red-NIR VCSELs emitting in the range of 630-850 nm are also possible when Ga 1-xAl xAs (x < 0.45) is used the active layer, making them candidates for light sources in plastic optical fibre (POF) based short-distance data communications. Furthermore the device may find applications as an optical clock and cross link between microwave and NIR communications. The operation of a both Gunn-Fabry-Perot laser and Gunn-VCSEL has been demonstrated by us recently. In the current work we present the potential results of experimental and theoretical studies concerning the applications together with the gain and emission characteristics of Gunn-Lasers.

Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flow

NASA Astrophysics Data System (ADS)

Thornton, Robert L.; Mosby, William J.; Chung, Harlan F.

1989-10-01

The authors present fabrication techniques and device performance for a novel transistor structure, the lateral heterojunction bipolar transistor. The lateral heterojunctions are formed by impurity-induced disordering of a GaAs base layer sandwiched between two AlGaAs layers. These transistor structures exhibit current gains of 14 for base widths of 0.74 micron. Transistor action in this device occurs parallel to the surface of the device structure. The active base region of the structure is completely submerged, resulting in a reduction of surface recombination as a mechanism for gain reduction in the device. Impurity-induced disordering is used to widen the bandgap of the alloy in the emitter and collector, resulting in an improvement of the emitter injection efficiency. Since the device is based entirely on a surface diffusion process, the device is completely planar and has no steps involving etching of the III-V alloy material. These advantages lead this device to be considered as a candidate for optoelectronic integration applications. The transistor device functions as a buried heterostructure laser, with a threshold current as low as 6 mA for a 1.4-micron stripe.

Diffusion-Driven Charge Transport in Light Emitting Devices

PubMed Central

Oksanen, Jani; Suihkonen, Sami

2017-01-01

Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics. PMID:29231900

Mesure des champs de radiation dans le detecteur ATLAS et sa caverne avec les detecteurs au silicium a pixels ATLAS-MPX

NASA Astrophysics Data System (ADS)

Bouchami, Jihene

The LHC proton-proton collisions create a hard radiation environment in the ATLAS detector. In order to quantify the effects of this environment on the detector performance and human safety, several Monte Carlo simulations have been performed. However, direct measurement is indispensable to monitor radiation levels in ATLAS and also to verify the simulation predictions. For this purpose, sixteen ATLAS-MPX devices have been installed at various positions in the ATLAS experimental and technical areas. They are composed of a pixelated silicon detector called MPX whose active surface is partially covered with converter layers for the detection of thermal, slow and fast neutrons. The ATLAS-MPX devices perform real-time measurement of radiation fields by recording the detected particle tracks as raster images. The analysis of the acquired images allows the identification of the detected particle types by the shapes of their tracks. For this aim, a pattern recognition software called MAFalda has been conceived. Since the tracks of strongly ionizing particles are influenced by charge sharing between adjacent pixels, a semi-empirical model describing this effect has been developed. Using this model, the energy of strongly ionizing particles can be estimated from the size of their tracks. The converter layers covering each ATLAS-MPX device form six different regions. The efficiency of each region to detect thermal, slow and fast neutrons has been determined by calibration measurements with known sources. The study of the ATLAS-MPX devices response to the radiation produced by proton-proton collisions at a center of mass energy of 7 TeV has demonstrated that the number of recorded tracks is proportional to the LHC luminosity. This result allows the ATLAS-MPX devices to be employed as luminosity monitors. To perform an absolute luminosity measurement and calibration with these devices, the van der Meer method based on the LHC beam parameters has been proposed. Since the ATLAS-MPX devices response and the luminosity are correlated, the results of measuring radiation levels are expressed in terms of particle fluences per unit integrated luminosity. A significant deviation has been obtained when comparing these fluences with those predicted by GCALOR, which is one of the ATLAS detector simulations. In addition, radiation measurements performed at the end of proton-proton collisions have demonstrated that the decay of radionuclides produced during collisions can be observed with the ATLAS-MPX devices. The residual activation of ATLAS components can be measured with these devices by means of ambient dose equivalent calibration. Keywords: pattern recognition, charge sharing effect, neutron detection efficiency, luminosity, van der Meer method, particle fluences, GCALOR simulation, residual activation, ambient dose equivalent.

Development of the sonic pump levitator

NASA Technical Reports Server (NTRS)

Dunn, S. A.

1985-01-01

The process and mechanism involved in producing glass microballoons (GMBs) of acceptable quality for laser triggered inertial fusion through use of glass jet levitation and manipulation are considered. The gas jet levitation device, called sonic pumps, provides positioning by timely and appropriate application of gas mementum from one or more of six sonic pumps which are arranged orthogonally in opposed pairs about the levitation region and are activated by an electrooptical, computer controlled, feedback system. The levitation device was fabricated and its associated control systems were assembled into a package and tested in reduced gravity flight regime of the NASA KC-135 aircraft.

An Impaled Potential Unexploded Device in the Civilian Trauma Setting: A Case Report and Review of the Literature.

PubMed

Thaut, Lane C; Murtha, Andrew S; Johnson, Anthony E; Roper, Jamie L

2018-05-01

The management of patients with impaled unexploded devices is rare in the civilian setting. However, as the lines of the traditional battlefield are blurred by modern warfare and terrorist activity, emergency providers should be familiar with facility protocols, plans, and contact information of their local resources for unexploded devices. A 44-year-old male sustained a close-proximity blast injury to his lower extremities while manipulating a mortar-type firework. He presented to the regional trauma center with an open, comminuted distal femur fracture and radiographic evidence of a potential explosive device in his thigh. His management was coordinated with the local Explosive Ordinance Disposal and the fire department. WHY SHOULD AN EMERGENCY PHYSICIAN BE AWARE OF THIS?: Explosive devices pose a grave threat when encountered. Familiarization with protocols to manage these patients can mitigate disaster. Emergency providers should expect and be prepared to coordinate care for these patients. Copyright © 2017 Elsevier Inc. All rights reserved.

Electronically active defects in the Cu2ZnSn(Se,S)4 alloys as revealed by transient photocapacitance spectroscopy

NASA Astrophysics Data System (ADS)

Miller, D. Westley; Warren, Charles W.; Gunawan, Oki; Gokmen, Tayfun; Mitzi, David B.; Cohen, J. David

2012-10-01

Transient photocapacitance (TPC) spectra were obtained on a series of Cu2ZnSn(Se,S)4 absorber devices with varying Se:S ratios, providing bandgaps (Eg) between 1 eV and 1.5 eV. Efficiencies varied between 8.3% and 9.3% for devices with Eg ≤ 1.2 eV and were near 6.5% for devices with Eg ≥ 1.4 eV. The TPC spectra revealed a band-tail region with Urbach energies at or below 18 meV for the first group, but in the 25-30 meV range for the higher band-gap samples. A deeper defect band centered near 0.8 eV was also observed in most samples. We identified a correlation between the Urbach energies and the voltage deficit in these devices.

Tetherless near-infrared control of brain activity in behaving animals using fully implantable upconversion microdevices.

PubMed

Wang, Ying; Lin, Xudong; Chen, Xi; Chen, Xian; Xu, Zhen; Zhang, Wenchong; Liao, Qinghai; Duan, Xin; Wang, Xin; Liu, Ming; Wang, Feng; He, Jufang; Shi, Peng

2017-10-01

Many nanomaterials can be used as sensors or transducers in biomedical research and they form the essential components of transformative novel biotechnologies. In this study, we present an all-optical method for tetherless remote control of neural activity using fully implantable micro-devices based on upconversion technology. Upconversion nanoparticles (UCNPs) were used as transducers to convert near-infrared (NIR) energy to visible light in order to stimulate neurons expressing different opsin proteins. In our setup, UCNPs were packaged in a glass micro-optrode to form an implantable device with superb long-term biocompatibility. We showed that remotely applied NIR illumination is able to reliably trigger spiking activity in rat brains. In combination with a robotic laser projection system, the upconversion-based tetherless neural stimulation technique was implemented to modulate brain activity in various regions, including the striatum, ventral tegmental area, and visual cortex. Using this system, we were able to achieve behavioral conditioning in freely moving animals. Notably, our microscale device was at least one order of magnitude smaller in size (∼100 μm in diameter) and two orders of magnitude lighter in weight (less than 1 mg) than existing wireless optogenetic devices based on light-emitting diodes. This feature allows simultaneous implantation of multiple UCNP-optrodes to achieve modulation of brain function to control complex animal behavior. We believe that this technology not only represents a novel practical application of upconversion nanomaterials, but also opens up new possibilities for remote control of neural activity in the brains of behaving animals. Copyright © 2017 Elsevier Ltd. All rights reserved.

Studies in remote sensing of Southern California and related environments

NASA Technical Reports Server (NTRS)

Bowden, L. W.

1971-01-01

A summary is presented of the research activities in southern California to determine whether meaningful geographic information was obtainable by use of remote sensing in an area already well documented or if the techniques and methodology could be transferred to related environments. Several broad characteristics of the regional geography were investigated with regards to their feasibility to be studied by aircraft and spacecraft sensors to improve the inventory and understanding of resources and environmental circumstances and to serve as models for future geographic analysis of other regions when using remote sensing devices. Sample activities are described in detail and three experiments producing worthwhile results are highlighted: mapping montane vegetation with color IR imagery, analysis of urban residual environment using color IR aerial photography, and regional agricultural land use mapping tested against color IR photography.

Ultra-low input power long-wavelength GaSb type-I laser diodes at 2.7-3.0 μm

NASA Astrophysics Data System (ADS)

Vizbaras, Augustinas; Greibus, Mindaugas; Dvinelis, Edgaras; Trinkūnas, Augustinas; Kovalenkovas, Deividas; Šimonytė, Ieva; Vizbaras, Kristijonas

2014-02-01

Mid-infrared spectral region (2-4 μm) is gaining significant attention recently due to the presence of numerous enabling applications in the field of gas sensing, medical, environmental and defense applications. Major requirement for these applications is the availability of laser sources in this spectral window. Type-I GaSb-based laser diodes are ideal candidates for these applications being compact, electrically pumped, power efficient and able to operate at room temperature in continuous-wave. Moreover, due to the nature of type-I transition; these devices have a characteristic low operation voltage, typically below 1 V, resulting in low power consumption, and high-temperature of operation. In this work, we present recent progress of 2.7 μm - 3.0 μm wavelength single-spatial mode GaSb type-I laser diode development at Brolis Semiconductors. Experimental device structures were grown by solid-source multi-wafer MBE, consisting of an active region with 2 compressively strained (~1.3 %-1.5 %) GaInAsSb quantum wells with GaSb barriers for 2.7 μm devices and quinternary AlGaInAsSb barriers for 3.0 μm devices. Epi-wafers were processed into a narrow-ridge (2-4 μm) devices and mounted p-side up on CuW heatsink. Devices exhibited very low CW threshold powers of < 100 mW, and single spatial mode (TE00) operation with room-temperature output powers up to 40 mW in CW mode. Operating voltage was as low as 1.2 V at 1.2 A. As-cleaved devices worked CW up to 50 deg C.

Combating Transnational Terrorism in the East African Region: The Role of the African Union Mission in Somalia

DTIC Science & Technology

2017-06-01

four main groups : prevention; disruption; prosecution; and coordination and information sharing. Under prevention, counterterrorism forces are... group has transformed into small active units capable of conducting assassinations, kidnapping, planting improvised explosive devices, and attacking...remaining challenges and highlights 1 International Crisis Group , “Working to Prevent Conflict Worldwide

The SWRL Audio Laboratory System (ALS): An Integrated Configuration for Psychomusicology Research. Technical Report 51.

ERIC Educational Resources Information Center

Williams, David Brian; Hoskin, Richard K.

This report describes features of the Audio Laboratory System (ALS), a device which supports research activities of the Southwest Regional Laboratory's Music Program. The ALS is used primarily to generate recorded audio tapes for psychomusicology research related to children's perception and learning of music concepts such as pitch, loudness,…

Developing a new treatment device: how to get an idea to the marketplace.

PubMed

Dymond, Elizabeth; Long, Adele; McCarthy, Avril; Drake, Marcus J

2012-04-01

A good idea does not inevitably lead to successful innovation; it needs additional "drivers" and coherent activity of a specialized team. The initial idea needs proof-of-concept and prototype testing. Alongside, market review must anticipate future need and competitors, and ensure that no current patents are infringed. The likelihood that reimbursement will be secured and that health systems will "adopt" the device has to be considered. Intellectual property (IP) protection is needed to maintain sole rights to exploit the core concept. Non-disclosure agreements (NDA) should be put in place, and commercial considerations should be remembered before any disclosure in the public domain, including publications. Prospective business partners will review the concept from many perspectives, including stage of device development, effective IP protection, any clinical trial evidence, and whether the device aligns with their business strategy. Royalties arising from sales of a marketed device are distributed to all parties contributing to its development; the party bearing the greater financial burden of developing the final product will gain the greater share of royalties. The innovator's employer will have a call on proceeds if the idea arose in the course of employment. All stages of development require fastidious documentation to meet requirements of the regulatory authorities responsible for permitting use in patients. Specific regulatory requirements depend on which region(s) of the world the device will be marketed in. This review explains all stages of the innovation pathway from concept to adoption, giving practical advice and signposting expertise relevant to each stage. Copyright © 2011 Wiley Periodicals, Inc.

The electro-optic mechanism and infrared switching dynamic of the hybrid multilayer VO2/Al:ZnO heterojunctions.

PubMed

Zhang, Peng; Zhang, Wu; Wang, Junyong; Jiang, Kai; Zhang, Jinzhong; Li, Wenwu; Wu, Jiada; Hu, Zhigao; Chu, Junhao

2017-06-30

Active and widely controllable phase transition optical materials have got rapid applications in energy-efficient electronic devices, field of meta-devices and so on. Here, we report the optical properties of the vanadium dioxide (VO 2 )/aluminum-doped zinc oxide (Al:ZnO) hybrid n-n type heterojunctions and the corresponding electro-optic performances of the devices. Various structures are fabricated to compare the discrepancy of the optical and electrical characteristics. It was found that the reflectance spectra presents the wheel phenomenon rather than increases monotonically with temperature at near-infrared region range. The strong interference effects was found in the hybrid multilayer heterojunction. In addition, the phase transition temperature decreases with increasing the number of the Al:ZnO layer, which can be ascribed to the electron injection to the VO 2 film from the Al:ZnO interface. Affected by the double layer Al:ZnO, the abnormal Raman vibration mode was presented in the insulator region. By adding the external voltage on the Al 2 O 3 /Al:ZnO/VO 2 /Al:ZnO, Al 2 O 3 /Al:ZnO/VO 2 and Al 2 O 3 /VO 2 /Al:ZnO thin-film devices, the infrared optical spectra of the devices can be real-time manipulated by an external voltage. The main effect of joule heating and assistant effect of electric field are illustrated in this work. It is believed that the results will add a more thorough understanding in the application of the VO 2 /transparent conductive film device.

GaInP2/GaAs tandem cells for space applications

NASA Technical Reports Server (NTRS)

Olson, J. M.; Kurtz, S. R.; Kibbler, A. E.; Bertness, K. A.; Friedman, D. J.

1991-01-01

The monolithic, tunnel-junction-interconnected tandem combination of a GaInP2 top cell and a GaAs bottom cell has achieved a one-sun, AM1.5 efficiency of 27.3 percent. With proper design of the top cell, air mass zero (AM0) efficiencies greater than 25 percent are possible. A description and the advantages of this device for space applications are presented and discussed. The advantages include high-voltage, low-current, two-terminal operation for simple panel fabrication, and high conversion efficiency with low-temperature coefficient. Also, because the active regions of the device are Al-free, the growth of high efficiency devices is not affected by trace levels of O2 or H2O in the MOCVD growth system.

Zn2GeO4 nanowires as efficient electron injection material for electroluminescent devices.

PubMed

Wang, Jiangxin; Yan, Chaoyi; Magdassi, Shlomo; Lee, Pooi See

2013-08-14

Pure phase Zn2GeO4 nanowires (NWs) were grown by the chemical vapor transport method on p-GaN: Mg/Al2O3 substrate. The as-grown Zn2GeO4 NWs exhibited n-type characteristic due to native defects and formed a p-n heterojunction with the p-GaN substrate. The unique energy level of Zn2GeO4 NWs promotes electron injection into GaN active region while suppressing hole injection into Zn2GeO4 NWs. The device exhibited an emission centered at 426 nm and a low turn-on voltage around 4 V. Zn2GeO4 NWs are first reported in this paper as promising electron transport and injection material for electroluminescent devices.

Progress in high-power continuous-wave quantum cascade lasers [Invited].

PubMed

Figueiredo, Pedro; Suttinger, Matthew; Go, Rowel; Tsvid, Eugene; Patel, C Kumar N; Lyakh, Arkadiy

2017-11-01

Multi-watt continuous-wave room temperature operation with efficiency exceeding 10% has been demonstrated for quantum cascade lasers essentially in the entire mid-wave and long-wave infrared spectral regions. Along with interband cascade lasers, these devices are the only room-temperature lasers that directly convert electrical power into mid- and long-infrared optical power. In this paper, we review the progress in high-power quantum cascade lasers made over the last 10 years. Specifically, an overview of the most important active region, waveguide, and thermal design techniques is presented, and various aspects of die packaging for high-power applications are discussed. Prospects of power scaling with lateral device dimensions for reaching optical power level in the range from 10 W to 20 W are also analyzed. Finally, coherent and spectral beam-combining techniques for very high-power infrared platforms are discussed.

Spatial control of chemical processes on nanostructures through nano-localized water heating.

PubMed

Jack, Calum; Karimullah, Affar S; Tullius, Ryan; Khorashad, Larousse Khosravi; Rodier, Marion; Fitzpatrick, Brian; Barron, Laurence D; Gadegaard, Nikolaj; Lapthorn, Adrian J; Rotello, Vincent M; Cooke, Graeme; Govorov, Alexander O; Kadodwala, Malcolm

2016-03-10

Optimal performance of nanophotonic devices, including sensors and solar cells, requires maximizing the interaction between light and matter. This efficiency is optimized when active moieties are localized in areas where electromagnetic (EM) fields are confined. Confinement of matter in these 'hotspots' has previously been accomplished through inefficient 'top-down' methods. Here we report a rapid 'bottom-up' approach to functionalize selective regions of plasmonic nanostructures that uses nano-localized heating of the surrounding water induced by pulsed laser irradiation. This localized heating is exploited in a chemical protection/deprotection strategy to allow selective regions of a nanostructure to be chemically modified. As an exemplar, we use the strategy to enhance the biosensing capabilities of a chiral plasmonic substrate. This novel spatially selective functionalization strategy provides new opportunities for efficient high-throughput control of chemistry on the nanoscale over macroscopic areas for device fabrication.

Photonic crystal lasers using wavelength-scale embedded active region

NASA Astrophysics Data System (ADS)

Matsuo, Shinji; Sato, Tomonari; Takeda, Koji; Shinya, Akihiko; Nozaki, Kengo; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya; Fujii, Takuro; Hasebe, Koichi; Kakitsuka, Takaaki

2014-01-01

Lasers with ultra-low operating energy are desired for use in chip-to-chip and on-chip optical interconnects. If we are to reduce the operating energy, we must reduce the active volume. Therefore, a photonic crystal (PhC) laser with a wavelength-scale cavity has attracted a lot of attention because a PhC provides a large Q-factor with a small volume. To improve this device's performance, we employ an embedded active region structure in which the wavelength-scale active region is buried with an InP PhC slab. This structure enables us to achieve effective confinement of both carriers and photons, and to improve the thermal resistance of the device. Thus, we have obtained a large external differential quantum efficiency of 55% and an output power of -10 dBm by optical pumping. For electrical pumping, we use a lateral p-i-n structure that employs Zn diffusion and Si ion implantation for p-type and n-type doping, respectively. We have achieved room-temperature continuous-wave operation with a threshold current of 7.8 µA and a maximum 3 dB bandwidth of 16.2 GHz. The results of an experimental bit error rate measurement with a 10 Gbit s-1 NRZ signal reveal the minimum operating energy for transferring a single bit of 5.5 fJ. These results show the potential of this laser to be used for very short reach interconnects. We also describe the optimal design of cavity quality (Q) factor in terms of achieving a large output power with a low operating energy using a calculation based on rate equations. When we assume an internal absorption loss of 20 cm-1, the optimized coupling Q-factor is 2000.

Panic and fear induced by deep brain stimulation.

PubMed

Shapira, N A; Okun, M S; Wint, D; Foote, K D; Byars, J A; Bowers, D; Springer, U S; Lang, P J; Greenberg, B D; Haber, S N; Goodman, W K

2006-03-01

Mood, cognitive, and behavioural changes have been reported with deep brain stimulation (DBS) in the thalamus, globus pallidus interna, and anterior limb of the internal capsule/nucleus accumbens region. To investigate panic and fear resulting from DBS. Intraoperative DBS in the region of the right and then left anterior limb of the internal capsule and nucleus accumbens region was undertaken to treat a 52 year old man with treatment refractory obsessive-compulsive disorder (OCD). Mood, anxiety, OCD, alertness, heart rate, and subjective feelings were recorded during intraoperative test stimulation and at follow up programming sessions. DBS at the distal (0) contact (cathode 0-, anode 2+, pulse width 210 ms, rate 135 Hz, at 6 volts) elicited a panic attack (only seen at the (0) contact). The patient felt flushed, hot, fearful, and described himself as having a "panic attack." His heart rate increased from 53 to 111. The effect (present with either device) was witnessed immediately after turning the device on, and abruptly ceased in the off condition DBS of the anterior limb of the internal capsule and nucleus accumbens region caused severe "panic." This response may result from activation of limbic and autonomic networks.

Structured luminescence conversion layer

DOEpatents

Berben, Dirk; Antoniadis, Homer; Jermann, Frank; Krummacher, Benjamin Claus; Von Malm, Norwin; Zachau, Martin

2012-12-11

An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern.

Epitaxial approaches to long-wavelength vertical-cavity lasers

NASA Astrophysics Data System (ADS)

Hall, Eric Michael

The success of short-wavelength (850 nm) vertical-cavity surface-emitting lasers (VCSELs) as low-cost components in fiber optic networks has created a strong demand for similar low-cost devices at longer wavelengths (1.3--1.55mum), which are even more important in telecommunications systems. Extending the success of VCSELs to these longer wavelengths, however, has been slowed by the absence of a mature technology that incorporates all of the necessary components on one substrate without sacrificing the inexpensive and manufacturable nature of VCSELs. Although InAlGaAs active regions on InP substrates have been developed extensively, the other components of vertical-cavity lasers, especially epitaxially-grown distributed Bragg reflectors (DBRs), are less mature on these substrates. This thesis examines the materials and technologies that enable long-wavelength VCSELs to be grown in a single, epitaxial, lattice-matched step on InP substrates. The advantages and shortcomings of each material system are identified and the impact on devices examined. Additionally, processing technologies that rely on the properties of these materials are developed. From these studies, a InP-based, lattice-matched VCSEL design is presented that utilizes AlGaAsSb for high reflectivity DBRs, InAlGaAs for high quality active regions, InP for heat and current spreading, and a materials selective etch for electrical and optical confinement. In short, the design avoids the shortcomings of each material system while emphasizing the advantages. The resulting devices, showing low threshold currents, high efficiencies and powers, and high operating temperatures, not only validate this approach but demonstrate that such lattice-matched, InP-based devices may be a low-cost, manufacturable answer to this long-wavelength VCSEL demand.

Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

DOEpatents

Biefeld, Robert M.; Dawson, L. Ralph; Fritz, Ian J.; Kurtz, Steven R.; Zipperian, Thomas E.

1991-01-01

A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

NASA Astrophysics Data System (ADS)

Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio

2015-12-01

The Graphene-Base Heterojunction Transistor (GBHT) is a novel device concept with a high potential for analog high-frequency RF operation, in which the current is due to both thermionic emission and tunneling. In this paper we study through numerical simulations the influence of previously uninvestigated aspects of Si- and Ge-based GBHTs-namely, crystallographic orientation and doping density values-on the device performance; a comparison with an aggressively scaled HBT structure is then reported. The simulations are carried out with an in-house developed code based on a 1-D quantum transport model within the effective mass approximation and the assumptions of ballistic transport with non-parabolic corrections and ideal semiconductor-graphene interface. We show that crystallographic orientation has a negligible effect on the GBHT performance. The doping density values in the GBHT emitter and collector regions can be tailored to maximize the device performance: the Si device shows better overall performance than the Ge one, yielding a peak cut-off frequency fT higher than 4 THz together with an intrinsic voltage gain above 10, or even higher fT at the cost of a lower gain. The Si-based GBHT can potentially outperform the SiGe HBT by a 2.8 higher fT . For a Si-based GBHT with a circular active region of diameter 50-100 nm, a theoretical balanced value for fT and fmax above 2 THz can be achieved, provided the base parasitics are carefully minimized.

Development of laser-based techniques for in situ characterization of the first wall in ITER and future fusion devices

NASA Astrophysics Data System (ADS)

Philipps, V.; Malaquias, A.; Hakola, A.; Karhunen, J.; Maddaluno, G.; Almaviva, S.; Caneve, L.; Colao, F.; Fortuna, E.; Gasior, P.; Kubkowska, M.; Czarnecka, A.; Laan, M.; Lissovski, A.; Paris, P.; van der Meiden, H. J.; Petersson, P.; Rubel, M.; Huber, A.; Zlobinski, M.; Schweer, B.; Gierse, N.; Xiao, Q.; Sergienko, G.

2013-09-01

Analysis and understanding of wall erosion, material transport and fuel retention are among the most important tasks for ITER and future devices, since these questions determine largely the lifetime and availability of the fusion reactor. These data are also of extreme value to improve the understanding and validate the models of the in vessel build-up of the T inventory in ITER and future D-T devices. So far, research in these areas is largely supported by post-mortem analysis of wall tiles. However, access to samples will be very much restricted in the next-generation devices (such as ITER, JT-60SA, W7-X, etc) with actively cooled plasma-facing components (PFC) and increasing duty cycle. This has motivated the development of methods to measure the deposition of material and retention of plasma fuel on the walls of fusion devices in situ, without removal of PFC samples. For this purpose, laser-based methods are the most promising candidates. Their feasibility has been assessed in a cooperative undertaking in various European associations under EFDA coordination. Different laser techniques have been explored both under laboratory and tokamak conditions with the emphasis to develop a conceptual design for a laser-based wall diagnostic which is integrated into an ITER port plug, aiming to characterize in situ relevant parts of the inner wall, the upper region of the inner divertor, part of the dome and the upper X-point region.

Nanometer-scale oxide thin film transistor with potential for high-density image sensor applications.

PubMed

Jeon, Sanghun; Park, Sungho; Song, Ihun; Hur, Ji-Hyun; Park, Jaechul; Kim, Hojung; Kim, Sunil; Kim, Sangwook; Yin, Huaxiang; Chung, U-In; Lee, Eunha; Kim, Changjung

2011-01-01

The integration of electronically active oxide components onto silicon circuits represents an innovative approach to improving the functionality of novel devices. Like most semiconductor devices, complementary-metal-oxide-semiconductor image sensors (CISs) have physical limitations when progressively scaled down to extremely small dimensions. In this paper, we propose a novel hybrid CIS architecture that is based on the combination of nanometer-scale amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and a conventional Si photo diode (PD). With this approach, we aim to overcome the loss of quantum efficiency and image quality due to the continuous miniaturization of PDs. Specifically, the a-IGZO TFT with 180 nm gate length is probed to exhibit remarkable performance including low 1/f noise and high output gain, despite fabrication temperatures as low as 200 °C. In particular, excellent device performance is achieved using a double-layer gate dielectric (Al₂O₃/SiO₂) combined with a trapezoidal active region formed by a tailored etching process. A self-aligned top gate structure is adopted to ensure low parasitic capacitance. Lastly, three-dimensional (3D) process simulation tools are employed to optimize the four-pixel CIS structure. The results demonstrate how our stacked hybrid device could be the starting point for new device strategies in image sensor architectures. Furthermore, we expect the proposed approach to be applicable to a wide range of micro- and nanoelectronic devices and systems.

Improving the beam quality of high-power laser diodes by introducing lateral periodicity into waveguides

NASA Astrophysics Data System (ADS)

Sobczak, Grzegorz; DÄ browska, ElŻbieta; Teodorczyk, Marian; Kalbarczyk, Joanna; MalÄ g, Andrzej

2013-01-01

Low quality of the optical beam emitted by high-power laser diodes is the main disadvantage of these devices. The two most important reasons are highly non-Gaussian beam profile with relatively wide divergence in the junction plane and the filamentation effect. Designing laser diode as an array of narrow, close to each other single-mode waveguides is one of the solutions to this problem. In such devices called phase locked arrays (PLA) there is no room for filaments formation. The consequence of optical coupling of many single-mode waveguides is the device emission in the form of few almost diffraction limited beams. Because of losses in regions between active stripes the PLA devices have, however, somewhat higher threshold current and lower slope efficiencies compared to wide-stripe devices of similar geometry. In this work the concept of the high-power laser diode resonator consisted of joined PLA and wide stripe segments is proposed. Resulting changes of electro-optical characteristics of PLA are discussed. The devices are based on the asymmetric heterostructure designed for improvement of the catastrophic optical damage threshold as well as thermal and electrical resistances. Due to reduced distance from the active layer to surface in this heterostructure, better stability of current (and gain) distribution with changing drive level is expected. This could lead to better stability of optical field distribution and supermodes control. The beam divergence reduction in the direction perpendicular of the junction plane has been also achieved.

Acoustic-wave sensor for ambient monitoring of a photoresist-stripping agent

DOEpatents

Pfeifer, K.B.; Hoyt, A.E.; Frye, G.C.

1998-08-18

The acoustic-wave sensor is disclosed. The acoustic-wave sensor is designed for ambient or vapor-phase monitoring of a photoresist-stripping agent such as N-methylpyrrolidinone (NMP), ethoxyethylpropionate (EEP) or the like. The acoustic-wave sensor comprises an acoustic-wave device such as a surface-acoustic-wave (SAW) device, a flexural-plate-wave (FPW) device, an acoustic-plate-mode (APM) device, or a thickness-shear-mode (TSM) device (also termed a quartz crystal microbalance or QCM) having a sensing region on a surface thereof. The sensing region includes a sensing film for sorbing a quantity of the photoresist-stripping agent, thereby altering or shifting a frequency of oscillation of an acoustic wave propagating through the sensing region for indicating an ambient concentration of the agent. According to preferred embodiments of the invention, the acoustic-wave device is a SAW device; and the sensing film comprises poly(vinylacetate), poly(N-vinylpyrrolidinone), or poly(vinylphenol). 3 figs.

Acoustic-wave sensor for ambient monitoring of a photoresist-stripping agent

DOEpatents

Pfeifer, Kent B.; Hoyt, Andrea E.; Frye, Gregory C.

1998-01-01

The acoustic-wave sensor. The acoustic-wave sensor is designed for ambient or vapor-phase monitoring of a photoresist-stripping agent such as N-methylpyrrolidinone (NMP), ethoxyethylpropionate (EEP) or the like. The acoustic-wave sensor comprises an acoustic-wave device such as a surface-acoustic-wave (SAW) device, a flexural-plate-wave (FPW) device, an acoustic-plate-mode (APM) device, or a thickness-shear-mode (TSM) device (also termed a quartz crystal microbalance or QCM) having a sensing region on a surface thereof. The sensing region includes a sensing film for sorbing a quantity of the photoresist-stripping agent, thereby altering or shifting a frequency of oscillation of an acoustic wave propagating through the sensing region for indicating an ambient concentration of the agent. According to preferred embodiments of the invention, the acoustic-wave device is a SAW device; and the sensing film comprises poly(vinylacetate), poly(N-vinylpyrrolidinone), or poly(vinylphenol).

Design and Application of a New Automated Fluidic Visceral Stimulation Device for Human fMRI Studies of Interoception

PubMed Central

Gassert, Roger; Wanek, Johann; Michels, Lars; Mehnert, Ulrich; Kollias, Spyros S.

2016-01-01

Mapping the brain centers that mediate the sensory-perceptual processing of visceral afferent signals arising from the body (i.e., interoception) is useful both for characterizing normal brain activity and for understanding clinical disorders related to abnormal processing of visceral sensation. Here, we report a novel closed-system, electrohydrostatically driven master–slave device that was designed and constructed for delivering controlled fluidic stimulations of visceral organs and inner cavities of the human body within the confines of a 3T magnetic resonance imaging (MRI) scanner. The design concept and performance of the device in the MRI environment are described. In addition, the device was applied during a functional MRI (fMRI) investigation of visceral stimulation related to detrusor distention in two representative subjects to verify its feasibility in humans. System evaluation tests demonstrate that the device is MR-compatible with negligible impact on imaging quality [static signal-to-noise ratio (SNR) loss <2.5% and temporal SNR loss <3.5%], and has an accuracy of 99.68% for flow rate and 99.27% for volume delivery. A precise synchronization of the stimulus delivery with fMRI slice acquisition was achieved by programming the proposed device to detect the 5 V transistor–transistor logic (TTL) trigger signals generated by the MRI scanner. The fMRI data analysis using the general linear model analysis with the standard hemodynamic response function showed increased activations in the network of brain regions that included the insula, anterior and mid-cingulate and lateral prefrontal cortices, and thalamus in response to increased distension pressure on viscera. The translation from manually operated devices to an MR-compatible and MR-synchronized device under automatic control represents a useful innovation for clinical neuroimaging studies of human interoception. PMID:27551646

Integration of silicon-based neural probes and micro-drive arrays for chronic recording of large populations of neurons in behaving animals

NASA Astrophysics Data System (ADS)

Michon, Frédéric; Aarts, Arno; Holzhammer, Tobias; Ruther, Patrick; Borghs, Gustaaf; McNaughton, Bruce; Kloosterman, Fabian

2016-08-01

Objective. Understanding how neuronal assemblies underlie cognitive function is a fundamental question in system neuroscience. It poses the technical challenge to monitor the activity of populations of neurons, potentially widely separated, in relation to behaviour. In this paper, we present a new system which aims at simultaneously recording from a large population of neurons from multiple separated brain regions in freely behaving animals. Approach. The concept of the new device is to combine the benefits of two existing electrophysiological techniques, i.e. the flexibility and modularity of micro-drive arrays and the high sampling ability of electrode-dense silicon probes. Main results. Newly engineered long bendable silicon probes were integrated into a micro-drive array. The resulting device can carry up to 16 independently movable silicon probes, each carrying 16 recording sites. Populations of neurons were recorded simultaneously in multiple cortical and/or hippocampal sites in two freely behaving implanted rats. Significance. Current approaches to monitor neuronal activity either allow to flexibly record from multiple widely separated brain regions (micro-drive arrays) but with a limited sampling density or to provide denser sampling at the expense of a flexible placement in multiple brain regions (neural probes). By combining these two approaches and their benefits, we present an alternative solution for flexible and simultaneous recordings from widely distributed populations of neurons in freely behaving rats.

High performance quantum cascade lasers: Loss, beam stability, and gain engineering

NASA Astrophysics Data System (ADS)

Bouzi, Pierre Michel

Quantum Cascade (QC) lasers are semiconductor devices emitting in the mid-infrared (3-30 micron) and terahertz (30-300 micron) regions of the electromagnetic spectrum. Since their first demonstration by Jerome Faist et. al. in 1994, they have evolved very quickly into high performance devices and given rise to many applications such as trace-gas sensing, medical diagnosis, free-space communication, and light detection and ranging (LIDAR). In this thesis, we investigate a further increase of the performance of QC devices and, through meticulous device modeling and characterizations, gain a deeper understanding of several of their unique characteristics, especially their carrier transport and lifetime, their characteristic temperature, their waveguide loss and modal gain, their leakage current, and their transverse mode profile. First, in our quest to achieve higher performance, we investigate the effect of growth asymmetries on device transport characteristics. This investigation stems from recent studies on the role of interface roughness on intersubband scattering and device performance. Through a symmetric active core design, we find that interface roughness and ionized impurity scattering induced by dopant migration play a significant role in carrier transport through the device. Understanding how interface roughness affects intersubband scattering, in turn, we engineer the gain in QC devices by placing monolayer barriers at specific locations within the device band structure. These strategically placed additional thin barrier layers introduce roughness scattering into the device active region, thereby selectively decreasing the lower laser state lifetime and increasing population inversion necessary for laser action. Preliminary measurement results from modified devices reveal a 50% decrease in the emission broadening compared to the control structures, which should lead to a two-fold increase in gain. A special class of so-called "strong coupling" QC lasers recently emerged with high optical power and high efficiency at cryogenic temperatures. However their performances decay rather rapidly with temperature in both pulsed and continuous wave modes. Through detailed measurements and analysis, we investigate several possible causes of this shortcoming and propose design modifications for temperature performance improvement. While the strong coupling devices are efficient and powerful, their performance often suffers from unintentional and potentially harmful beam steering at high power. Here, we identify the root of this pointing instability to be from non-linear interactions between multiple transverse modes. And, to resolve this issue, we employ focused ion beam (FIB) milling to etch small lateral constrictions on top of the devices and fill them with metal. This has the effect of greatly reducing the intensity of higher order transverse modes as they propagate through the cavity. A good grasp of the microscopic details involved in QC device operations will result in better lasers, with high beam quality. This, in turn, will enable new applications, such as the detection of SO2 isotopologues near 7.4 micron, which is of particular importance for the study of ultraviolet photolysis and the sulfur cycle on Venus.

Characterization of emitted light from travelling Gunn domains in Al0.08Ga0.92As alloy based Gunn devices

NASA Astrophysics Data System (ADS)

Cetinkaya, Caglar; Mutlu, Selman; Donmez, Omer; Erol, Ayse

2017-11-01

We report room temperature operation of light emitters based on Al0.08Ga0.92As Gunn devices fabricated in a simple bar geometry with wedged-shaped electrodes. High-speed I-V measurements reveal that, at the threshold of negative differential resistance region at around 3.8 kV/cm, current instabilities, i.e., Gunn oscillations, are created with a 3.8 ns period. Both edge and surface light emission are observed when the device is biased at an electric field of onset of the negative differential resistance (NDR) region at around 3.8 kV/cm and the intensity of the light exponentially increases at applied fields just above NDR threshold likewise in a conventional laser. The origin of the light emission, which has peak wavelength is around 816 nm corresponds to the band-gap energy of Al0.08Ga0.92As, is recombination of electrons and holes generated by impact ionisation process in travelling space charge domains, i.e., Gunn domains. We demonstrate that, with increasing applied field, the amplitude of Gunn domains increases which is a result of the enhanced generation of electrons and holes via impact ionisation. The intensity of the emitted light is observed to be dependent on applied electric field. At low electric fields, light intensity increases linearly then, when applied electric field reaches the onset of NDR region, increases exponentially. Besides, as applied field is increased, full width at half maximum (FWHM) of emitted light decreases to 56.5 nm from 62 nm, evolving into higher selective emission line in wavelength. The light emission from the device is determined to be independent of the polarity of the applied voltage. A comparison of surface emission and edge emission characteristics of the waveguided device are different from each other. Edge emission has higher electroluminescence intensity and better spectral purity than surface emission with well-defined longitudinal modes of Fabry-Pérot cavity, which indicates that, in such a device, lasing action arises from the recombination of excess carriers generated via impact ionisation in travelling Gunn domains. Besides, the edge emission peak of waveguided Al0.08Ga0.92As Gunn device at 4.1 kV/cm is split into two peaks with FWHM of 8 and 6 nm as well as neighbouring sharper minor peaks due to stimulated emission dominates by building-up photons in the cavity. Our results reveal that the proposed Gunn device can be a promising alternative to conventional diode lasers with its simpler design, only one type doped active region and voltage polarity-independent operation, but the duty cycle has to be chosen small enough to make the device operate at room temperature.

TEM-EELS Investigation of Boron and Phosphorus Passivated 4H-SiC/SiO2 Interface Structures

NASA Astrophysics Data System (ADS)

Klingshirn, Christopher; Taillon, Joshua; Liu, Gang; Dhar, Sarit; Feldman, Leonard; Zheleva, Tsvetanka; Lelis, Aivars; Salamanca-Riba, Lourdes

A high density of electronic defects at the SiC/SiO2 interface adversely affects SiC-based metal oxide semiconductor devices. Various treatments are known to improve device performance. Annealing in a nitric oxide (NO) environment, for example, passivates electronic defects at the interface and raises the carrier mobility in the active region to 35-40 cm2/Vs, but the effect saturates after about 60 minutes of annealing. Passivation with phosphorus or boron improves upon NO by a factor of 2, increasing the mobility to over 90 cm2/Vs.2 We investigate the chemical and structural effects of these treatments on the SiC/SiO2 transition layer using high-resolution transmission electron microscopy (HRTEM) and high angle annular dark field (HAADF). Electron energy loss spectroscopy Spectrum Imaging (EELS SI) collected across the transition region allow identification of the width, composition and types of bonding at the transition layer. Advanced machine learning techniques applied to the EELS data reveal intermediate bonding states within this region. Supported by ARL under Grant No. W911NF1420110.

Association of Rapid Care Process Implementation on Reperfusion Times Across Multiple ST-Segment-Elevation Myocardial Infarction Networks.

PubMed

Fordyce, Christopher B; Al-Khalidi, Hussein R; Jollis, James G; Roettig, Mayme L; Gu, Joan; Bagai, Akshay; Berger, Peter B; Corbett, Claire C; Dauerman, Harold L; Fox, Kathleen; Garvey, J Lee; Henry, Timothy D; Rokos, Ivan C; Sherwood, Matthew W; Wilson, B Hadley; Granger, Christopher B

2017-01-01

The Mission: Lifeline STEMI Systems Accelerator program, implemented in 16 US metropolitan regions, resulted in more patients receiving timely reperfusion. We assessed whether implementing key care processes was associated with system performance improvement. Hospitals (n=167 with 23 498 ST-segment-elevation myocardial infarction patients) were surveyed before (March 2012) and after (July 2014) program intervention. Data were merged with patient-level clinical data over the same period. For reperfusion, hospitals were grouped by whether a specific process of care was implemented, preexisting, or never implemented. Uptake of 4 key care processes increased after intervention: prehospital catheterization laboratory activation (62%-91%; P<0.001), single call transfer protocol from an outside facility (45%-70%; P<0.001), and emergency department bypass for emergency medical services direct presenters (48%-59%; P=0.002) and transfers (56%-79%; P=0.001). There were significant differences in median first medical contact-to-device times among groups implementing prehospital activation (88 minutes implementers versus 89 minutes preexisting versus 98 minutes nonimplementers; P<0.001 for comparisons). Similarly, patients treated at hospitals implementing single call transfer protocols had shorter median first medical contact-to-device times (112 versus 128 versus 152 minutes; P<0.001). Emergency department bypass was also associated with shorter median first medical contact-to-device times for emergency medical services direct presenters (84 versus 88 versus 94 minutes; P<0.001) and transfers (123 versus 127 versus 167 minutes; P<0.001). The Accelerator program increased uptake of key care processes, which were associated with improved system performance. These findings support efforts to implement regional ST-segment-elevation myocardial infarction networks focused on prehospital catheterization laboratory activation, single call transfer protocols, and emergency department bypass. © 2017 American Heart Association, Inc.

Output limitations to single stage and cascaded 2-2.5 mum light emitting diodes

NASA Astrophysics Data System (ADS)

Hudson, Andrew Ian

Since the advent of precise semiconductor engineering techniques in the 1960s, considerable effort has been devoted both in academia and private industry to the fabrication and testing of complex structures. In addition to other techniques, molecular beam epitaxy (MBE) has made it possible to create devices with single mono-layer accuracy. This facilitates the design of precise band structures and the selection of specific spectroscopic properties for light source materials. The applications of such engineered structures have made solid state devices common commercial quantities. These applications include solid state lasers, light emitting diodes and light sensors. Band gap engineering has been used to design emitters for many wavelength bands, including the short wavelength (SWIR) infrared region which ranges from 1.5 to 2.5mum. Practical devices include sensors operating in the 2-2.5mum range. When designing such a device, necessary concerns include the required bias voltage, operating current, input impedance and especially for emitters, the wall-plug efficiency. Three types of engineered structures are considered in this thesis. These include GaInAsSb quaternary alloy bulk active regions, GaInAsSb multiple quantum well devices (MQW) and GaInAsSb cascaded light emitting diodes. The three structures are evaluated according to specific standards applied to emitters of infrared light. The spectral profiles are obtained with photo or electro-luminescence, for the purpose of locating the peak emission wavelength. The peak wavelength for these specimens is in the 2.2-2.5mum window. The emission efficiency is determined by employing three empirical techniques: current/voltage (IV), radiance/current (LI), and carrier lifetime measurements. The first verifies that the structure has the correct electrical properties, by measuring among other parameters the activation voltage. The second is used to determine the energy efficiency of the device, including the wall-plug and quantum efficiencies. The last provides estimates of the relative magnitude of the Shockley Read Hall, radiative and Auger coefficients. These constants illustrate the overall radiative efficiency of the material, by noting comparisons between radiative and non-radiative recombination rates.

Quantitative Electroencephalography Analysis (qEEG) of Neuro-Electro-Adaptive Therapy 12™ [NEAT12] Up-Regulates Cortical Potentials in an Alcoholic during Protracted Abstinence: Putative Anti-Craving Implications

PubMed Central

Waite, Roger L; Oscar-Berman, Marlene; RBraverman, Eric; Barh, Debmalya; Blum, Kenneth

2015-01-01

Introduction Cranial electrotherapy stimulation (CES) is a noninvasive therapy that has been used for decades in the United States to treat anxiety, depression, and insomnia in the general population. The effectiveness of CES has been questioned by many and its use is considered controversial. In this study we are presenting data on one alcoholic patient using a newly engineered device we call Neuro-Electro-Adaptive Therapy 12™ [NEAT12]. This hybrid device utilizes TENS current characteristics yielding CES effects. This device has been found to primarily target the excitation of the Cingulate Gyrus region of the brain. Case presentation This is a 42 year old male who has been abstinent from alcohol for approximately two months. The data presented herein represents the pre to post qEEG differences of an alcoholic in protracted abstinence. This subject was evaluated both before and after using the NEAT-12 device. The pre to post comparisons suggest that the cortical potentials especially at the Cingulate Gyrus are up regulated after using the device. The absolute power changes obtained shows a decrease of more than 2 SD as noted in the delta wave spectrum. Also noted is an overall cortical increase in the alpha spectrum. The resting alert state of a neuro typical population is most prominently marked by a regulation of 7.5-11 Hz alpha throughout the cortex. The decreased in delta and theta suggests an up regulation of the prefrontal cortex and the anterior Cingulate Gyrus a site involved in substance use disorder (SUD). Conclusion A presence of dominant slow waves through the prefrontal cortex and the anterior Cingulate Gyrus is often associated with OCD, anxiety, impulsivity and cravings in addicted populations. It is conceivable that our initial finding of altered electrical activity of the brain using qEEG analysis suggests the NEAT-12 may induce a “normalization” of aberrant electrical activity of the cortical region of the brain known to occur during protracted abstinence of alcoholics. It may have utility as a putative anti-craving CES device and therefore warrants intensive investigation. PMID:25927012

Investigation of solar active regions at high resolution by balloon flights of the solar optical universal polarimeter, extended definition phase

NASA Technical Reports Server (NTRS)

Tarbell, Theodore D.

1993-01-01

Technical studies of the feasibility of balloon flights of the former Spacelab instrument, the Solar Optical Universal Polarimeter, with a modern charge-coupled device (CCD) camera, to study the structure and evolution of solar active regions at high resolution, are reviewed. In particular, different CCD cameras were used at ground-based solar observatories with the SOUP filter, to evaluate their performance and collect high resolution images. High resolution movies of the photosphere and chromosphere were successfully obtained using four different CCD cameras. Some of this data was collected in coordinated observations with the Yohkoh satellite during May-July, 1992, and they are being analyzed scientifically along with simultaneous X-ray observations.

Spectroscopic study of transparency current in mid-infrared quantum cascade lasers.

PubMed

Revin, Dmitry G; Hassan, Randa S; Krysa, Andrey B; Wang, Yongrui; Belyanin, Alexey; Kennedy, Kenneth; Atkins, Chris N; Cockburn, John W

2012-08-13

We report measurements which give direct insight into the origins of the transparency current for λ ~5 µm In0.6Ga0.4As/In0.42Al0.58As quantum cascade lasers in the temperature range of 80-280 K. The transparency current values have been found from broadband transmission measurements through the laser waveguides under sub-threshold operating conditions. Two active region designs were compared. The active region of the first laser is based on double-LO-phonon relaxation approach, while the second device has only one lower level, without specially designed resonant LO-phonon assisted depopulation. It is shown that transparency current contributes more than 70% to the magnitude of threshold current at high temperatures for both designs.

Complementary junction heterostructure field-effect transistor

DOEpatents

Baca, Albert G.; Drummond, Timothy J.; Robertson, Perry J.; Zipperian, Thomas E.

1995-01-01

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

Complementary junction heterostructure field-effect transistor

DOEpatents

Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

1995-12-26

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

Evaluation of Not-Activated and Activated PRP in Hair Loss Treatment: Role of Growth Factor and Cytokine Concentrations Obtained by Different Collection Systems.

PubMed

Gentile, Pietro; Cole, John P; Cole, Megan A; Garcovich, Simone; Bielli, Alessandra; Scioli, Maria Giovanna; Orlandi, Augusto; Insalaco, Chiara; Cervelli, Valerio

2017-02-14

Platelet rich plasma (PRP) was tested as a potential therapy for androgenetic alopecia (AGA) through two different clinical protocols in which one population (18 participants) received half-head treatment with autologous non-activated PRP (A-PRP) produced by CPunT Preparation System (Biomed Device, Modena, Italy) and the other half-head with placebo, and a second separated population in which all participants (n = 6, 3 participants per group) received treatment with calcium-activated PRP (AA-PRP) produced from one of two different PRP collection devices (Regen Blood Cell Therapy or Arthrex Angel System). For the A-PRP study, three treatments were administered over 30-day intervals. Trichoscan analysis of patients, three months post-treatment, showed a clinical improvement in the number of hairs in the target area (36 ± 3 hairs) and in total hair density (65±  5 hair cm2), whereas negligible improvements in hair count (1.1±  1.4 hairs) and density (1.9 ± 10.2 hair cm2) were seen in the region of the scalp that received placebo. Microscopic evaluation conducted two weeks after treatment showed also an increase in epidermal thickness, Ki67+ keratinocytes, and in the number of follicles. The AA-PRP treatment groups received a singular set of injections, and six months after the treatments were administered, notable differences in clinical outcomes were obtained from the two PRP collection devices (+90 ± 6 hair cm2 versus -73 ± 30 hair cm2 hair densities, Regen versus Arthrex). Growth factor concentrations in AA-PRP prepared from the two collection devices did not differ significantly upon calcium activation.

Evaluation of Not-Activated and Activated PRP in Hair Loss Treatment: Role of Growth Factor and Cytokine Concentrations Obtained by Different Collection Systems

PubMed Central

Gentile, Pietro; Cole, John P.; Cole, Megan A.; Garcovich, Simone; Bielli, Alessandra; Scioli, Maria Giovanna; Orlandi, Augusto; Insalaco, Chiara; Cervelli, Valerio

2017-01-01

Platelet rich plasma (PRP) was tested as a potential therapy for androgenetic alopecia (AGA) through two different clinical protocols in which one population (18 participants) received half-head treatment with autologous non-activated PRP (A-PRP) produced by CPunT Preparation System (Biomed Device, Modena, Italy) and the other half-head with placebo, and a second separated population in which all participants (n = 6, 3 participants per group) received treatment with calcium-activated PRP (AA-PRP) produced from one of two different PRP collection devices (Regen Blood Cell Therapy or Arthrex Angel System). For the A-PRP study, three treatments were administered over 30-day intervals. Trichoscan analysis of patients, three months post-treatment, showed a clinical improvement in the number of hairs in the target area (36 ± 3 hairs) and in total hair density (65 ± 5 hair cm2), whereas negligible improvements in hair count (1.1 ± 1.4 hairs) and density (1.9 ± 10.2 hair cm2) were seen in the region of the scalp that received placebo. Microscopic evaluation conducted two weeks after treatment showed also an increase in epidermal thickness, Ki67+ keratinocytes, and in the number of follicles. The AA-PRP treatment groups received a singular set of injections, and six months after the treatments were administered, notable differences in clinical outcomes were obtained from the two PRP collection devices (+90 ± 6 hair cm2 versus −73 ± 30 hair cm2 hair densities, Regen versus Arthrex). Growth factor concentrations in AA-PRP prepared from the two collection devices did not differ significantly upon calcium activation. PMID:28216604

Neuroprotective effect of subretinal implants in the RCS rat.

PubMed

Pardue, Machelle T; Phillips, Michael J; Yin, Hang; Sippy, Brian D; Webb-Wood, Sarah; Chow, Alan Y; Ball, Sherry L

2005-02-01

Retinal prosthetics have been designed to interface with the neural retina by electrically stimulating the remaining retinal circuits after photoreceptor degeneration. However, the electrical stimulation provided by the subretinal implant may also stimulate neurotrophic factors that provide neuroprotection to the retina. This study was undertaken to determine whether electrical stimulation from a subretinal photodiode-based implant has a neuroprotective effect on photoreceptors in the RCS rat, a model of photoreceptor degeneration. Eyes of RCS rats were implanted with an active or inactive device or underwent sham surgery before photoreceptor degeneration. Outer retinal function was assessed with electroretinogram (ERG) recordings weekly until 8 weeks after surgery, at which time retinal tissue was collected and processed for morphologic assessment, including photoreceptor cell counts and retinal layer thickness. At 4 to 6 weeks after surgery, the ERG responses in the active-implant eyes were 30% to 70% greater in b-wave amplitude than the responses from eyes implanted with inactive devices, those undergoing sham surgery, or the nonsurgical control eyes. At 8 weeks after surgery the ERG responses from active-implant eyes were not significantly different from the control groups. However, the number of photoreceptors in eyes implanted with the active or inactive device was significantly greater in the regions over and around the implant versus sham-surgical and nonsurgical control eyes. These results suggest that subretinal electrical stimulation provides temporary preservation of retinal function in the RCS rat. In addition, implantation of an active or inactive device into the subretinal space causes morphologic preservation of photoreceptors in the RCS rat until 8 weeks after surgery. Further studies are needed to determine whether the correlation of neuropreservation with subretinal implantation is due to electrical stimulation and/or a mechanical presence of the implant in the subretinal space.

Lucy Montoro Rehabilitation Network mobile unit: an alternative public healthcare policy.

PubMed

Battistella, Linamara Rizzo; Juca, Sueli Satie H; Tateishi, Mariane; Oshiro, Milton Seigui; Yamanaka, Eduardo Inglez; Lima, Eliana; Ramos, Vinicius Delgado

2015-07-01

The aim is to analyze rehabilitation services provided by a mobile rehabilitation clinic (MU) in nine regions of the State of São Paulo, demonstrating the distribution of orthoses, prostheses and other mobility aids for persons with physical disabilities according to age groups and impairments, as well as the number of persons with physical disabilities as estimated by Brazilian official data sources. The number of persons with disabilities in each region was obtained through estimations from the 2010 Brazilian IBGE Census. The number of assistive technologies suppliers and technicians were provided by the Brazilian Technical Orthopedics Association (ABOTEC). Patients were referred to the MU by Regional Health Departments. After examination of a multidisciplinary team, assistive devices are prescribed and delivered according to patients' needs. Data on patients were also assessed according to questionnaires on their age, diagnosis, gender, marital status and education level. From 2009 to 2011, the MU went through 15,000 km providing rehabilitation services through the Public Health System to 1801 patients. Additionally, 3328 devices were delivered in this period. Different age, diagnosis, gender, marital status and schooling profiles are highlighted in each of the analyzed regions. Data on patients' profiles were made available through services provided by the MU--including the average index of 1.85 devices delivered to each patient and demand projections--which can be used in the planning of public policies. The MU made rehabilitation services more accessible, trained professionals, raised awareness on the correct delivery and use of assistive devices, and identified and organized people's demand in each region. Implications for Rehabilitation Delivering prostheses, orthoses and other mobility aids fulfills the rights of persons with disabilities to personal mobility with the greatest possible independence, as foreseen by the Convention on the Rights of Persons with Disabilities, increasing their participation in society on an equal basis with others. The direct impact of actively reaching out into the community to provide quality rehabilitation services and assistive devices increases the level of access of persons with disabilities to health services and equalizes opportunities. Outreach initiatives to deliver rehabilitation services in the community must include a capacity-building component. Building the capacities of local practitioners and health personnel will further empower both these professionals and persons with disabilities, diminishing attitudinal barriers. Reaching out into the community allows gathering data on the prevalence of health conditions, local need and demand for assistive devices and rehabilitation services, and informs decision-making.

Artifact suppression and analysis of brain activities with electroencephalography signals.

PubMed

Rashed-Al-Mahfuz, Md; Islam, Md Rabiul; Hirose, Keikichi; Molla, Md Khademul Islam

2013-06-05

Brain-computer interface is a communication system that connects the brain with computer (or other devices) but is not dependent on the normal output of the brain (i.e., peripheral nerve and muscle). Electro-oculogram is a dominant artifact which has a significant negative influence on further analysis of real electroencephalography data. This paper presented a data adaptive technique for artifact suppression and brain wave extraction from electroencephalography signals to detect regional brain activities. Empirical mode decomposition based adaptive thresholding approach was employed here to suppress the electro-oculogram artifact. Fractional Gaussian noise was used to determine the threshold level derived from the analysis data without any training. The purified electroencephalography signal was composed of the brain waves also called rhythmic components which represent the brain activities. The rhythmic components were extracted from each electroencephalography channel using adaptive wiener filter with the original scale. The regional brain activities were mapped on the basis of the spatial distribution of rhythmic components, and the results showed that different regions of the brain are activated in response to different stimuli. This research analyzed the activities of a single rhythmic component, alpha with respect to different motor imaginations. The experimental results showed that the proposed method is very efficient in artifact suppression and identifying individual motor imagery based on the activities of alpha component.

An organic water-gated ambipolar transistor with a bulk heterojunction active layer for stable and tunable photodetection

NASA Astrophysics Data System (ADS)

Xu, Haihua; Zhu, Qingqing; Wu, Tongyuan; Chen, Wenwen; Zhou, Guodong; Li, Jun; Zhang, Huisheng; Zhao, Ni

2016-11-01

Organic water-gated transistors (OWGTs) have emerged as promising sensing architectures for biomedical applications and environmental monitoring due to their ability of in-situ detection of biological substances with high sensitivity and low operation voltage, as well as compatibility with various read-out circuits. Tremendous progress has been made in the development of p-type OWGTs. However, achieving stable n-type operation in OWGTs due to the presence of solvated oxygen in water is still challenging. Here, we report an ambipolar OWGT based on a bulk heterojunction active layer, which exhibits a stable hole and electron transport when exposed to aqueous environment. The device can be used as a photodetector both in the hole and electron accumulation regions to yield a maximum responsivity of 0.87 A W-1. More importantly, the device exhibited stable static and dynamic photodetection even when operated in the n-type mode. These findings bring possibilities for the device to be adopted for future biosensing platforms, which are fully compatible with low-cost and low-power organic complementary circuits.

Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning

DOE PAGES

Rouet-Leduc, Bertrand; Barros, Kipton Marcos; Lookman, Turab; ...

2016-04-26

A fundamental challenge in the design of LEDs is to maximise electro-luminescence efficiency at high current densities. We simulate GaN-based LED structures that delay the onset of efficiency droop by spreading carrier concentrations evenly across the active region. Statistical analysis and machine learning effectively guide the selection of the next LED structure to be examined based upon its expected efficiency as well as model uncertainty. This active learning strategy rapidly constructs a model that predicts Poisson-Schrödinger simulations of devices, and that simultaneously produces structures with higher simulated efficiencies.

Photoelectrochemically driven self-assembly method

DOEpatents

Nielson, Gregory N.; Okandan, Murat

2017-01-17

Various technologies described herein pertain to assembling electronic devices into a microsystem. The electronic devices are disposed in a solution. Light can be applied to the electronic devices in the solution. The electronic devices can generate currents responsive to the light applied to the electronic devices in the solution, and the currents can cause electrochemical reactions that functionalize regions on surfaces of the electronic devices. Additionally or alternatively, the light applied to the electronic devices in the solution can cause the electronic devices to generate electric fields, which can orient the electronic devices and/or induce movement of the electronic devices with respect to a receiving substrate. Further, electrodes on a receiving substrate can be biased to attract and form connections with the electronic devices having the functionalized regions on the surfaces. The microsystem can include the receiving substrate and the electronic devices connected to the receiving substrate.

Tritiated amorphous silicon films and devices

NASA Astrophysics Data System (ADS)

Kosteski, Tome

The do saddle-field glow discharge deposition technique has been used to bond tritium within an amorphous silicon thin film network using silane and elemental tritium in the glow discharge. The concentration of tritium is approximately 7 at. %. Minimal outgassing of tritium from tritiated hydrogenated amorphous silicon (a-Si:H:T) at room temperature suggests that tritium is bonded stably. Tritium effusion only occurred at temperatures above the film's growth temperature. The radioactive decay of tritium results in the production of high-energy beta particles. Each beta particle can generate on average approximately 1300 electron-hole pairs in a-Si:H:T. Electrical conductivity of a-Si:H:T is shown to be due to a thermally activated process and due to the generation of excess carriers by the beta particles. p-i-n betavoltaic devices have been made with a-Si:H:T in the intrinsic (i-) region. The i-region consisted of either a-Si:H:T, or a thin section of a-Si:H:T (a Delta layer) sandwiched between undoped hydrogenated amorphous silicon (a-Si:H). The excess carriers generated in the i-region are separated by the device's built-in electric field. Short-circuit currents (Isc ), open-circuit voltages (Voc), and power have been measured and correlated to the generation of excess carriers in the i-region. Good devices were made at a substrate temperature of 250°C and relatively large flow rates of silane and tritium; this ensures that there are more monohydride bonds than dihydride bonds. Under dark conditions, Isc, and Voc have been found to decrease rapidly. This is consistent with the production of silicon neutral dangling bonds (5 x 1017cm-3 per day) from the loss of tritium due to its transmutation into helium. Dangling bonds reduce carrier lifetime and weaken the electric field in the i-region. The short-circuit current from Delta layer devices decreased more slowly and settled to higher values for narrower Delta layers. This is because the dangling bonds are isolated to the Delta layer and the lifetime of excess carriers generated in the a-Si:H remains unaffected. Annealing a-Si:H:T at 120°C for approximately one hour is shown to remove dangling bonds produced from the decay of bonded tritium.

Organic light emitting device having multiple separate emissive layers

DOEpatents

Forrest, Stephen R [Ann Arbor, MI

2012-03-27

An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the entire emissive region. By aligning the energy levels of each emissive layer with the adjacent emissive layers, exciton formation in each layer may be improved. Devices incorporating multiple emissive layers with multiple exciton formation regions may exhibit improved performance, including internal quantum efficiencies of up to 100%.

Nano-particle based scattering layers for optical efficiency enhancement of organic light-emitting diodes and organic solar cells

NASA Astrophysics Data System (ADS)

Chang, Hong-Wei; Lee, Jonghee; Hofmann, Simone; Hyun Kim, Yong; Müller-Meskamp, Lars; Lüssem, Björn; Wu, Chung-Chih; Leo, Karl; Gather, Malte C.

2013-05-01

The performance of both organic light-emitting diodes (OLEDs) and organic solar cells (OSC) depends on efficient coupling between optical far field modes and the emitting/absorbing region of the device. Current approaches towards OLEDs with efficient light-extraction often are limited to single-color emission or require expensive, non-standard substrates or top-down structuring, which reduces compatibility with large-area light sources. Here, we report on integrating solution-processed nano-particle based light-scattering films close to the active region of organic semiconductor devices. In OLEDs, these films efficiently extract light that would otherwise remain trapped in the device. Without additional external outcoupling structures, translucent white OLEDs containing these scattering films achieve luminous efficacies of 46 lm W-1 and external quantum efficiencies of 33% (both at 1000 cd m-2). These are by far the highest numbers ever reported for translucent white OLEDs and the best values in the open literature for any white device on a conventional substrate. By applying additional light-extraction structures, 62 lm W-1 and 46% EQE are reached. Besides universally enhancing light-extraction in various OLED configurations, including flexible, translucent, single-color, and white OLEDs, the nano-particle scattering film boosts the short-circuit current density in translucent organic solar cells by up to 70%.

Fundamental Studies and Development of III-N Visible LEDs for High-Power Solid-State Lighting Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dupuis, Russell

The goal of this program is to understand in a fundamental way the impact of strain, defects, polarization, and Stokes loss in relation to unique device structures upon the internal quantum efficiency (IQE) and efficiency droop (ED) of III-nitride (III-N) light-emitting diodes (LEDs) and to employ this understanding in the design and growth of high-efficiency LEDs capable of highly-reliable, high-current, high-power operation. This knowledge will be the basis for our advanced device epitaxial designs that lead to improved device performance. The primary approach we will employ is to exploit new scientific and engineering knowledge generated through the application of amore » set of unique advanced growth and characterization tools to develop new concepts in strain-, polarization-, and carrier dynamics-engineered and low-defect materials and device designs having reduced dislocations and improved carrier collection followed by efficient photon generation. We studied the effects of crystalline defect, polarizations, hole transport, electron-spillover, electron blocking layer, underlying layer below the multiplequantum- well active region, and developed high-efficiency and efficiency-droop-mitigated blue LEDs with a new LED epitaxial structures. We believe new LEDs developed in this program will make a breakthrough in the development of high-efficiency high-power visible III-N LEDs from violet to green spectral region.« less

Patch Network for Power Allocation and Distribution in Smart Materials

NASA Technical Reports Server (NTRS)

Golembiewski, Walter T.

2000-01-01

The power allocation and distribution (PAD) circuitry is capable of allocating and distributing a single or multiple sources of power over multi-elements of a power user grid system. The purpose of this invention is to allocate and distribute power that is collected by individual patch rectennas to a region of specific power-user devices, such as actuators. The patch rectenna converts microwave power into DC power. Then this DC power is used to drive actuator devices. However, the power from patch rectennas is not sufficient to drive actuators unless all the collected power is effectively used to drive another group by allocation and distribution. The power allocation and distribution (PAD) circuitry solves the shortfall of power for devices in a large array. The PAD concept is based on the networked power control in which power collected over the whole array of rectennas is allocated to a sub domain where a group of devices is required to be activated for operation. Then the allocated power is distributed to individual element of power-devices in the sub domain according to a selected run-mode.

Active Mixing in Microchannels using Surface Acoustic Wave Streaming on Lithium Niobate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Branch, Darren W.; Meyer, Grant D.; Bourdon, Christopher Jay

2005-11-01

We present an active method for mixing fluid streams in microchannels at low Reynolds number with no dead volume. To overcome diffusion limited mixing in microchannels, surface acoustic wave streaming offers an extremely effective approach to rapidly homogenize fluids. This is a pivotal improvement over mixers based on complex 3D microchannels which have significant dead volume resulting in trapping or loss of sample. Our micromixer is integrable and highly adaptable for use within existing microfluidic devices. Surface acoustic wave devices fabricated on 128° YX LiNbO 3 permitted rapid mixing of flow streams as evidenced by fluorescence microscopy. Longitudinal waves createdmore » at the solid-liquid interface were capable of inducing strong nonlinear gradients within the bulk fluid. In the highly laminar regime (Re = 2), devices achieved over 93% mixing efficacy in less than a second. Micro-particle imaging velicometry was used to determine the mixing behavior in the microchannels and indicated that the liquid velocity can be controlled by varying the input power. Fluid velocities in excess of 3 cm•s -1 were measured in the main excitation region at low power levels (2.8mW). We believe that this technology will be pivotal in the development and advancement of microfluidic devices and applications.« less

The Girona Territori Cardioprotegit Project: Performance Evaluation of Public Defibrillators.

PubMed

Loma-Osorio, Pablo; Nuñez, Maria; Aboal, Jaime; Bosch, Daniel; Batlle, Pau; Ruiz de Morales, Ester; Ramos, Rafael; Brugada, Josep; Onaga, Hisao; Morales, Alex; Olivet, Josep; Brugada, Ramon

2018-02-01

In recent years, public access defibrillation programs have exponentially increased the availability of automatic external defibrillators (AED) in public spaces but there are no data on their performance in our setting. We conducted a descriptive analysis of the performance of AED since the launch of a public defibrillation program in our region. A retrospective analysis was conducted of electrocardiographic tracings and the performance of AED in a public defibrillation program from June 2011 to June 2015 in the province of Girona, Spain. There were 231 AED activations. Full information was available on 188 activations, of which 82% corresponded to mobile devices and 18% to permanent devices. Asystole was the most prevalent rhythm (42%), while ventricular fibrillation accounted for 23%. The specificity of the device in identifying a shockable rhythm was 100%, but there were 8 false negatives (sensitivity 83%). There were 47 shockable rhythms, with a spontaneous circulation recovery rate of 49% (23 cases). There were no accidents related to the use of the device. Nearly half of the recorded rhythms were asystole. The AED analyzed showed excellent safety and specificity, with moderate sensitivity. Half the patients with a shockable rhythm were successfully treated by the AED. Copyright © 2017 Sociedad Española de Cardiología. Published by Elsevier España, S.L.U. All rights reserved.

Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors

PubMed Central

Lee, Kangho; Nair, Pradeep R.; Alam, Muhammad A.; Janes, David B.; Wampler, Heeyeon P.; Zemlyanov, Dmitry Y.; Ivanisevic, Albena

2008-01-01

GaAs junction-field-effect transistors (JFETs) are utilized to achieve label-free detection of biological interaction between a probe transactivating transcriptional activator (TAT) peptide and the target trans-activation-responsive (TAR) RNA. The TAT peptide is a short sequence derived from the human immunodeficiency virus-type 1 TAT protein. The GaAs JFETs are modified with a mixed adlayer of 1-octadecanethiol (ODT) and TAT peptide, with the ODT passivating the GaAs surface from polar ions in physiological solutions and the TAT peptide providing selective binding sites for TAR RNA. The devices modified with the mixed adlayer exhibit a negative pinch-off voltage (VP) shift, which is attributed to the fixed positive charges from the arginine-rich regions in the TAT peptide. Immersing the modified devices into a TAR RNA solution results in a large positive VP shift (>1 V) and a steeper subthreshold slope (∼80 mV∕decade), whereas “dummy” RNA induced a small positive VP shift (∼0.3 V) without a significant change in subthreshold slopes (∼330 mV∕decade). The observed modulation of device characteristics is analyzed with analytical modeling and two-dimensional numerical device simulations to investigate the electronic interactions between the GaAs JFETs and biological molecules. PMID:19484151

Method of making high breakdown voltage semiconductor device

DOEpatents

Arthur, Stephen D.; Temple, Victor A. K.

1990-01-01

A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.

Use of mobile devices in the emergency department: A scoping review.

PubMed

Dexheimer, Judith W; Borycki, Elizabeth M

2015-12-01

Electronic health records are increasingly used in regional health authorities, healthcare systems, hospitals, and clinics throughout North America. The emergency department provides care for urgent and critically ill patients. Over the past several years, emergency departments have become more computerized. Tablet computers and Smartphones are increasingly common in daily use. As part of the computerization trend, we have seen the introduction of handheld computers, tablets, and Smartphones into practice as a way of providing health professionals (e.g. physicians, nurses) with access to patient information and decision support in the emergency department. In this article, we present a scoping review and outline the current state of the research using mobile devices in the emergency departments. Our findings suggest that there is very little research evidence that supports the use of these mobile devices, and more research is needed to better understand and optimize the use of mobile devices. Given the prevalence of handheld devices, it is inevitable that more decision support, charting, and other activities will be performed on these devices. These developments have the potential to improve the quality and timeliness of care but should be thoroughly evaluated. © The Author(s) 2014.

Diode having trenches in a semiconductor region

DOEpatents

Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

2016-03-22

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

System and method of operating toroidal magnetic confinement devices

DOEpatents

Chance, Morrell S.; Jardin, Stephen C.; Stix, Thomas H.; Grimm, deceased, Ray C.; Manickam, Janardhan; Okabayashi, Michio

1987-01-01

For toroidal magnetic confinement devices the second region of stability against ballooning modes can be accessed with controlled operation. Under certain modes of operation, the first and second stability regions may be joined together. Accessing the second region of stability is accomplished by forming a bean-shaped plasma and increasing the indentation until a critical value of indentation is reached. A pusher coil, located at the inner-major-radius side of the device, is engaged to form a bean-shaped poloidal cross-section in the plasma.

Neural Categorization of Vibrotactile Frequency in Flutter and Vibration Stimulations: An fMRI Study.

PubMed

Kim, Junsuk; Chung, Yoon Gi; Chung, Soon-Cheol; Bulthoff, Heinrich H; Kim, Sung-Phil

2016-01-01

As the use of wearable haptic devices with vibrating alert features is commonplace, an understanding of the perceptual categorization of vibrotactile frequencies has become important. This understanding can be substantially enhanced by unveiling how neural activity represents vibrotactile frequency information. Using functional magnetic resonance imaging (fMRI), this study investigated categorical clustering patterns of the frequency-dependent neural activity evoked by vibrotactile stimuli with gradually changing frequencies from 20 to 200 Hz. First, a searchlight multi-voxel pattern analysis (MVPA) was used to find brain regions exhibiting neural activities associated with frequency information. We found that the contralateral postcentral gyrus (S1) and the supramarginal gyrus (SMG) carried frequency-dependent information. Next, we applied multidimensional scaling (MDS) to find low-dimensional neural representations of different frequencies obtained from the multi-voxel activity patterns within these regions. The clustering analysis on the MDS results showed that neural activity patterns of 20-100 Hz and 120-200 Hz were divided into two distinct groups. Interestingly, this neural grouping conformed to the perceptual frequency categories found in the previous behavioral studies. Our findings therefore suggest that neural activity patterns in the somatosensory cortical regions may provide a neural basis for the perceptual categorization of vibrotactile frequency.

A numerically optimized active shield for improved TMS targeting

PubMed Central

Hernandez-Garcia, Luis; Hall, Timothy; Gomez, Luis; Michielssen, Eric

2010-01-01

Transcranial magnetic stimulation (TMS) devices suffer of poor targeting and penetration depth. A new approach to designing TMS coils is introduced in order to improve the focus of the stimulation region through the use of actively shielded probes. Iterative optimization techniques were used to design different active shielding coils for TMS probes. The new approach aims to increase the amount of energy deposited in a thin cylindrical region below the probe relative to the energy deposited elsewhere in the region (“sharpness”), while simultaneously increase the induced electric field deep in the target region relative to the surface (“penetration”). After convergence, the resulting designs showed that there is a clear tradeoff between sharpness and penetration that can be controlled by the choice of a tuning parameter. The resulting designs were tested on a realistic human head conductivity model, taking the contribution from surface charges into account. The design of choice reduced penetration depths by 16.7%. The activated surface area was reduced by 24.1 % and the volume of the activation was reduced from 42.6% by the shield. Restoring the lost penetration could be achieved by increasing the total power to the coil by 16.3%, but in that case, the stimulated volume reduction was only 13.1% and there was a slight increase in the stimulated surface area (2.9 %) PMID:20965451

A numerically optimized active shield for improved transcranial magnetic stimulation targeting.

PubMed

Hernandez-Garcia, Luis; Hall, Timothy; Gomez, Luis; Michielssen, Eric

2010-10-01

Transcranial magnetic stimulation (TMS) devices suffer of poor targeting and penetration depth. A new approach to designing TMS coils is introduced in order to improve the focus of the stimulation region through the use of actively shielded probes. Iterative optimization techniques were used to design different active shielding coils for TMS probes. The new approach aims to increase the amount of energy deposited in a thin cylindrical region below the probe relative to the energy deposited elsewhere in the region ("sharpness"), whereas, simultaneously increase the induced electric field deep in the target region relative to the surface ("penetration"). After convergence, the resulting designs showed that there is a clear tradeoff between sharpness and penetration that can be controlled by the choice of a tuning parameter. The resulting designs were tested on a realistic human head conductivity model, taking the contribution from surface charges into account. The design of choice reduced penetration depths by 16.7%. The activated surface area was reduced by 24.1% and the volume of the activation was reduced from 42.6% by the shield. Restoring the lost penetration could be achieved by increasing the total power to the coil by 16.3%, but in that case, the stimulated volume reduction was only 13.1% and there was a slight increase in the stimulated surface area (2.9%). Copyright © 2010 Elsevier Inc. All rights reserved.

Electron-beam-induced information storage in hydrogenated amorphous silicon devices

DOEpatents

Yacobi, B.G.

1985-03-18

A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge collection efficiency and thus in the charge collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage.

Implantable optoelectronic probes for in vivo optogenetics.

PubMed

Iseri, Ege; Kuzum, Duygu

2017-06-01

More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

Characterization of plasmonic hole arrays as transparent electrical contacts for organic photovoltaics using high-brightness Fourier transform methods

DOE PAGES

Camino, Fernando E.; Nam, Chang-Yong; Pang, Yutong T.; ...

2014-05-15

Here we present a methodology for probing light-matter interactions in prototype photovoltaic devices consisting of an organic semiconductor active layer with a semitransparent metal electrical contact exhibiting surface plasmon-based enhanced optical transmission. We achieve high-spectral irradiance in a spot size of less than 100 μm using a high-brightness laser-driven light source and appropriate coupling optics. Spatially resolved Fourier transform photocurrent spectroscopy in the visible and near-infrared spectral regions allows us to measure external quantum efficiency with high sensitivity in small-area devices (<1 mm 2). Lastly, this allows for rapid fabrication of variable-pitch sub-wavelength hole arrays in metal films for usemore » as transparent electrical contacts, and evaluation of the evanescent and propagating mode coupling to resonances in the active layer.« less

A Simple fMRI Compatible Robotic Stimulator to Study the Neural Mechanisms of Touch and Pain.

PubMed

Riillo, F; Bagnato, C; Allievi, A G; Takagi, A; Fabrizi, L; Saggio, G; Arichi, T; Burdet, E

2016-08-01

This paper presents a simple device for the investigation of the human somatosensory system with functional magnetic imaging (fMRI). PC-controlled pneumatic actuation is employed to produce innocuous or noxious mechanical stimulation of the skin. Stimulation patterns are synchronized with fMRI and other relevant physiological measurements like electroencephalographic activity and vital physiological parameters. The system allows adjustable regulation of stimulation parameters and provides consistent patterns of stimulation. A validation experiment demonstrates that the system safely and reliably identifies clusters of functional activity in brain regions involved in the processing of pain. This new device is inexpensive, portable, easy-to-assemble and customizable to suit different experimental requirements. It provides robust and consistent somatosensory stimulation, which is of crucial importance to investigating the mechanisms of pain and its strong connection with the sense of touch.

Accelerated life testing effects on CMOS microcircuit characteristics

NASA Technical Reports Server (NTRS)

1980-01-01

The 250 C, 200C and 125C accelerated tests are described. The wear-out distributions from the 250 and 200 C tests were used to estimate the activation energy between the two test temperatures. The duration of the 125 C test was not sufficient to bring the test devices into the wear-out region. It was estimated that, for the most complex of the three devices types, the activation energy between 200 C and 125 C should be at least as high as that between 250 C and 200 C. The practicality of the use of high temperature for the accelerated life tests from the point of view of durability of equipment is assessed. Guidlines for the development of accelerated life-test conditions are proposed. The use of the silicon nitride overcoat to improve the high temperature accelerated life-test characteristics of CMOS microcircuits is described.

Implantable optoelectronic probes for in vivo optogenetics

NASA Astrophysics Data System (ADS)

Iseri, Ege; Kuzum, Duygu

2017-06-01

More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

Ferroelectric Light Control Device

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Kim, Jae-Woo (Inventor); Elliott, Jr., James R. (Inventor)

2008-01-01

A light control device is formed by ferroelectric material and N electrodes positioned adjacent thereto to define an N-sided regular polygonal region or circular region there between where N is a multiple of four.

Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers

NASA Astrophysics Data System (ADS)

Dyksik, Mateusz; Motyka, Marcin; Kurka, Marcin; Ryczko, Krzysztof; Misiewicz, Jan; Schade, Anne; Kamp, Martin; Höfling, Sven; Sęk, Grzegorz

2017-11-01

Two designs of active region for an interband cascade laser, based on double or triple GaInSb/InAs type II quantum wells (QWs), were compared with respect to passive mode-locked operation in the mid-infrared range around 4 µm. The layer structure and electron and hole wavefunctions under external electric field were engineered to allow controlling the optical transition oscillator strength and the resulting lifetimes. As a result, the investigated structures can mimic absorber-like and gain-like sections of a mode-locked device when properly polarized with opposite bias. A significantly larger oscillator strength tuning range for triple QWs was experimentally verified by Fourier-transform photoreflectance.

[Study on the movement of the carrier recombination region in organic light-emitting diodes (OLEDs) based on DPVBi/Alq3].

PubMed

Yan, Guang; Zhao, Su-ling; Xu, Zheng; Zhang, Fu-jun; Kong, Chao; Liu, Xiao-dong; Gong, Wei; Gao, Li-yan

2011-07-01

Series of organic light emitting devices with basic structure of ITO/PCBM: PVK(x Wt%, approximately 40 nm)/DPVBi(30 nm)/Alq3 (30 nm)/Al were fabricated in order to investigate the carrier recombination region movement in these devices. The carrier injection-dependent, the carrier transport-dependent and the voltage-dependent carrier recombination region movements were investigated respectively by modifying cathode with lithium fluoride, by changing the doping concentration of PCBM and by changing the voltage on the devices. The physical mechanism behind the voltage-dependent carrier recombination region movement was discussed.

Monolithically Integrated Mid-Infrared Quantum Cascade Laser and Detector

PubMed Central

Schwarz, Benedikt; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried

2013-01-01

We demonstrate the monolithic integration of a mid-infrared laser and detector utilizing a bi-functional quantum cascade active region. When biased, this active region provides optical gain, while it can be used as a detector at zero bias. With our novel approach we can measure the light intensity of the laser on the same chip without the need of external lenses or detectors. Based on a bound-to-continuum design, the bi-functional active region has an inherent broad electro-luminescence spectrum of 200 cm−1, which indicate sits use for single mode laser arrays. We have measured a peak signal of 191.5 mV at theon-chip detector, without any amplification. The room-temperature pulsed emission with an averaged power consumption of 4 mW and the high-speed detection makes these devices ideal for low-power sensors. The combination of the on-chip detection functionality, the broad emission spectrum and the low average power consumption indicates the potential of our bi-functional quantum cascade structures to build a mid-infrared lab-on-a-chip based on quantum cascade laser technology. PMID:23389348

Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing

NASA Astrophysics Data System (ADS)

Kim, Honghyuk; Guan, Yingxin; Babcock, Susan E.; Kuech, Thomas F.; Mawst, Luke J.

2018-03-01

Laser diodes employing a strain-compensated GaAs1-xBix/GaAs1-yPy single quantum well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High resolution x-ray diffraction, room temperature photoluminescence, and real-time optical reflectance measurements during the OMVPE growth were used to find the optimum process window for the growth of the active region material. Systematic post-growth in situ thermal anneals of various lengths were carried out in order to investigate the impacts of thermal annealing on the laser device performance characteristics. While the lowest threshold current density was achieved after the thermal annealing for 30 min at 630 °C, a gradual decrease in the external differential quantum efficiency was observed as the annealing time increases. It was observed that the temperature sensitivities of the threshold current density increase while those of lasing wavelength and slope efficiency remain nearly constant with increasing annealing time. Z-contrast scanning transmission electron microscopic) analysis revealed inhomogeneous Bi distribution within the QW active region.

Current distribution in conducting nanowire networks

NASA Astrophysics Data System (ADS)

Kumar, Ankush; Vidhyadhiraja, N. S.; Kulkarni, Giridhar U.

2017-07-01

Conducting nanowire networks find diverse applications in solar cells, touch-screens, transparent heaters, sensors, and various related transparent conducting electrode (TCE) devices. The performances of these devices depend on effective resistance, transmittance, and local current distribution in these networks. Although, there have been rigorous studies addressing resistance and transmittance in TCE, not much attention is paid on studying the distribution of current. Present work addresses this compelling issue of understanding current distribution in TCE networks using analytical as well as Monte-Carlo approaches. We quantified the current carrying backbone region against isolated and dangling regions as a function of wire density (ranging from percolation threshold to many multiples of threshold) and compared the wired connectivity with those obtained from template-based methods. Further, the current distribution in the obtained backbone is studied using Kirchhoff's law, which reveals that a significant fraction of the backbone (which is believed to be an active current component) may not be active for end-to-end current transport due to the formation of intervening circular loops. The study shows that conducting wire based networks possess hot spots (extremely high current carrying regions) which can be potential sources of failure. The fraction of these hot spots is found to decrease with increase in wire density, while they are completely absent in template based networks. Thus, the present work discusses unexplored issues related to current distribution in conducting networks, which are necessary to choose the optimum network for best TCE applications.

Insulated InP (100) semiconductor by nano nucleus generation in pure water

NASA Astrophysics Data System (ADS)

Ghorab, Farzaneh; Es'haghi, Zarrin

2018-01-01

Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

p-i-n heterojunctions with BiFeO3 perovskite nanoparticles and p- and n-type oxides: photovoltaic properties.

PubMed

Chatterjee, Soumyo; Bera, Abhijit; Pal, Amlan J

2014-11-26

We formed p-i-n heterojunctions based on a thin film of BiFeO3 nanoparticles. The perovskite acting as an intrinsic semiconductor was sandwiched between a p-type and an n-type oxide semiconductor as hole- and electron-collecting layer, respectively, making the heterojunction act as an all-inorganic oxide p-i-n device. We have characterized the perovskite and carrier collecting materials, such as NiO and MoO3 nanoparticles as p-type materials and ZnO nanoparticles as the n-type material, with scanning tunneling spectroscopy; from the spectrum of the density of states, we could locate the band edges to infer the nature of the active semiconductor materials. The energy level diagram of p-i-n heterojunctions showed that type-II band alignment formed at the p-i and i-n interfaces, favoring carrier separation at both of them. We have compared the photovoltaic properties of the perovskite in p-i-n heterojunctions and also in p-i and i-n junctions. From current-voltage characteristics and impedance spectroscopy, we have observed that two depletion regions were formed at the p-i and i-n interfaces of a p-i-n heterojunction. The two depletion regions operative at p-i-n heterojunctions have yielded better photovoltaic properties as compared to devices having one depletion region in the p-i or the i-n junction. The results evidenced photovoltaic devices based on all-inorganic oxide, nontoxic, and perovskite materials.

Suppression of tritium retention in remote areas of ITER by nonperturbative reactive gas injection.

PubMed

Tabarés, F L; Ferreira, J A; Ramos, A; van Rooij, G; Westerhout, J; Al, R; Rapp, J; Drenik, A; Mozetic, M

2010-10-22

A technique based on reactive gas injection in the afterglow region of the divertor plasma is proposed for the suppression of tritium-carbon codeposits in remote areas of ITER when operated with carbon-based divertor targets. Experiments in a divertor simulator plasma device indicate that a 4  nm/min deposition can be suppressed by addition of 1  Pa·m³ s⁻¹ ammonia flow at 10 cm from the plasma. These results bolster the concept of nonperturbative scavenger injection for tritium inventory control in carbon-based fusion plasma devices, thus paving the way for ITER operation in the active phase under a carbon-dominated, plasma facing component background.

Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction

NASA Astrophysics Data System (ADS)

Stark, Christoph J. M.; Detchprohm, Theeradetch; Zhao, Liang; Paskova, Tanya; Preble, Edward A.; Wetzel, Christian

2012-12-01

Non-planar GaInN/GaN light-emitting diodes were epitaxially grown to exhibit steps for enhanced light emission. By means of a large off-cut of the epitaxial growth plane from the c-plane (0.06° to 2.24°), surface morphologies of steps and inclined terraces that resemble fish scale patterns could controllably be achieved. These patterns penetrate the active region without deteriorating the electrical device performance. We find conditions leading to a large increase in light-output power over the virtually on-axis device and over planar sapphire references. The process is found suitable to enhance light extraction even without post-growth processing.

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

PubMed

Fragkos, Ioannis E; Dierolf, Volkmar; Fujiwara, Yasufumi; Tansu, Nelson

2017-12-01

The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu +3 ion is decomposed in a multiple level system, which includes the carrier transport phenomena across the GaN/GaN:Eu/GaN active region of the device, and the interactions among traps, Eu +3 ions and the GaN host. The identification and analysis of the limiting factors of the IQE are accomplished through the CIE model. The CIE model provides a guidance for high IQE in the electrically-driven GaN:Eu based red light emitters.

Electron beam enhanced surface modification for making highly resolved structures

DOEpatents

Pitts, John R.

1986-01-01

A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structures, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching techniques.

Electron beam enhanced surface modification for making highly resolved structures

DOEpatents

Pitts, J.R.

1984-10-10

A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gaseous leaving group and a reactant fragment that combines with the substrate material under beam energy to form at least a surface compound. Variations of the method provide semiconductor device regions on doped silicon substrates, interconnect lines between active sites, three dimensional electronic chip structures, electron beam and optical read mass storage devices that may include color differentiated data areas, and resist areas for use with selective etching techniques.

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

NASA Astrophysics Data System (ADS)

Naderi, Ali

2017-12-01

In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain-source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.

Surface-Enhanced Raman Optical Data Storage system

DOEpatents

Vo-Dinh, T.

1994-06-28

An improved Surface-Enhanced Raman Optical Data Storage System (SERODS) is disclosed. In the improved system, entities capable of existing in multiple reversible states are present on the storage device. Such entities result in changed Surface-Enhanced Raman Scattering (SERS) when localized state changes are effected in less than all of the entities. Therefore, by changing the state of entities in localized regions of a storage device, the SERS emissions in such regions will be changed. When a write-on device is controlled by a data signal, such a localized regions of changed SERS emissions will correspond to the data written on the device. The data may be read by illuminating the surface of the storage device with electromagnetic radiation of an appropriate frequency and detecting the corresponding SERS emissions. Data may be deleted by reversing the state changes of entities in regions where the data was initially written. In application, entities may be individual molecules which allows for the writing of data at the molecular level. A read/write/delete head utilizing near-field quantum techniques can provide for a write/read/delete device capable of effecting state changes in individual molecules, thus providing for the effective storage of data at the molecular level. 18 figures.

Surface-enhanced raman optical data storage system

DOEpatents

Vo-Dinh, Tuan

1994-01-01

An improved Surface-Enhanced Raman Optical Data Storage System (SERODS) is disclosed. In the improved system, entities capable of existing in multiple reversible states are present on the storage device. Such entities result in changed Surface-Enhanced Raman Scattering (SERS) when localized state changes are effected in less than all of the entities. Therefore, by changing the state of entities in localized regions of a storage device, the SERS emissions in such regions will be changed. When a write-on device is controlled by a data signal, such a localized regions of changed SERS emissions will correspond to the data written on the device. The data may be read by illuminating the surface of the storage device with electromagnetic radiation of an appropriate frequency and detecting the corresponding SERS emissions. Data may be deleted by reversing the state changes of entities in regions where the data was initially written. In application, entities may be individual molecules which allows for the writing of data at the molecular level. A read/write/delete head utilizing near-field quantum techniques can provide for a write/read/delete device capable of effecting state changes in individual molecules, thus providing for the effective storage of data at the molecular level.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

Stacked organic photosensitive devices

DOEpatents

Forrest, Stephen; Xue, Jiangeng; Uchida, Soichi; Rand, Barry P.

2007-03-27

A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength .lamda..sub.1 and a second photoactive region having a characteristic absorption wavelength .lamda..sub.2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side of a reflective layer, such that the first photoactive region is closer to the reflective layer than the second photoactive region. The materials comprising the photoactive regions may be selected such that .lamda..sub.1 is at least about 10% different from .lamda..sub.2. The device may further comprise an exciton blocking layer disposed adjacent to and in direct contact with the organic acceptor material of each photoactive region, wherein the LUMO of each exciton blocking layer other than that closest to the cathode is not more than about 0.3 eV greater than the LUMO of the acceptor material.

Tunable dual-band graphene-based infrared reflectance filter.

PubMed

Goldflam, Michael D; Ruiz, Isaac; Howell, Stephen W; Wendt, Joel R; Sinclair, Michael B; Peters, David W; Beechem, Thomas E

2018-04-02

We experimentally demonstrated an actively tunable optical filter that controls the amplitude of reflected long-wave-infrared light in two separate spectral regions concurrently. Our device exploits the dependence of the excitation energy of plasmons in a continuous and unpatterned sheet of graphene on the Fermi-level, which can be controlled via conventional electrostatic gating. The filter enables simultaneous modification of two distinct spectral bands whose positions are dictated by the device geometry and graphene plasmon dispersion. Within these bands, the reflected amplitude can be varied by over 15% and resonance positions can be shifted by over 90 cm -1 . Electromagnetic simulations verify that tuning arises through coupling of incident light to graphene plasmons by a grating structure. Importantly, the tunable range is determined by a combination of graphene properties, device structure, and the surrounding dielectrics, which dictate the plasmon dispersion. Thus, the underlying design shown here is applicable across a broad range of infrared frequencies.

InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm{sup 2} at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dallner, Matthias; Hau, Florian; Kamp, Martin

2015-01-26

Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA/cm{sup 2} are presented. Two cascade designs with different lengths of the electron injector were investigated. Using a cascade design with 3 InAs quantum wells (QWs) in the electron injector, a device incorporating 22 stages in the active region exhibited a threshold current density of 940 A/cm{sup 2} at a record wavelength of 7 μm for ICLs operating in pulsed mode at room temperature. By investigating the influence of the number of stages on the device performance for a cascade design with 2 QWs in the electron injector, amore » further reduction of the threshold current density to 800 A/cm{sup 2} was achieved for a 30 stage device.« less

Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

DOE PAGES

Seren, Huseyin R.; Zhang, Jingdi; Keiser, George R.; ...

2016-01-26

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobilitymore » thereby damping the plasmonic response. here, we demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.« less

Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seren, Huseyin R.; Zhang, Jingdi; Keiser, George R.

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobilitymore » thereby damping the plasmonic response. here, we demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.« less

Engineering Strain for Improved III-Nitride Optoelectronic Device Performance

NASA Astrophysics Data System (ADS)

Van Den Broeck, Dennis Marnix

Due to growing environmental and economic concerns, renewable energy generation and high-efficiency lighting are becoming even more important in the scientific community. III-Nitride devices have been essential in production of high-brightness light-emitting diodes (LEDs) and are now entering the photovoltaic (PV) realm as the technology advances. InGaN/GaN multiple quantum well LEDs emitting in the blue/green region have emerged as promising candidates for next-generation lighting technologies. Due to the large lattice mismatch between InN and GaN, large electric fields exist within the quantum well layers and result in low rates of radiative recombination, especially for the green spectral region. This is commonly referred to as the "green gap" and results in poor external quantum efficiencies for light-emitting diodes and laser diodes. In order to mitigate the compressive stress of InGaN QWs, a novel growth technique is developed in order to grown thick, strain-relaxed In yGa1-yN templates for 0.08 < y < 0.11. By inserting 2 nm GaN interlayers into the growing InyGa1-yN film, and subsequently annealing the structure, "semibulk" InGaN templates were achieved with vastly superior crystal and optical properties than bulk InGaN films. These semibulk InGaN templates were then utilized as new templates for multiple quantum well active layers, effectively reducing the compressive strain in the InGaN wells due to the larger lattice constant of the InGaN template with respect to a GaN template. A zero-stress balance method was used in order to realize a strain-balanced multiple quantum well structure, which again showed improved optical characteristics when compared to fully-strain active regions. The semibulk InGaN template was then implemented into "strain-compensated" LED structures, where light emission was achieved with very little leakage current. Discussion of these strain-compensated devices compared to conventional LEDs is detailed.

Method and apparatus for actively controlling a micro-scale flexural plate wave device

DOEpatents

Dohner, Jeffrey L.

2001-01-01

An actively controlled flexural plate wave device provides a micro-scale pump. A method of actively controlling a flexural plate wave device produces traveling waves in the device by coordinating the interaction of a magnetic field with actively controlled currents. An actively-controlled flexural plate wave device can be placed in a fluid channel and adapted for use as a micro-scale fluid pump to cool or drive micro-scale systems, for example, micro-chips, micro-electrical-mechanical devices, micro-fluid circuits, or micro-scale chemical analysis devices.

Cathodoluminescence studies of chevron features in semi-polar (11 2 ¯ 2 ) InGaN/GaN multiple quantum well structures

NASA Astrophysics Data System (ADS)

Brasser, C.; Bruckbauer, J.; Gong, Y.; Jiu, L.; Bai, J.; Warzecha, M.; Edwards, P. R.; Wang, T.; Martin, R. W.

2018-05-01

Epitaxial overgrowth of semi-polar III-nitride layers and devices often leads to arrowhead-shaped surface features, referred to as chevrons. We report on a study into the optical, structural, and electrical properties of these features occurring in two very different semi-polar structures, a blue-emitting multiple quantum well structure, and an amber-emitting light-emitting diode. Cathodoluminescence (CL) hyperspectral imaging has highlighted shifts in their emission energy, occurring in the region of the chevron. These variations are due to different semi-polar planes introduced in the chevron arms resulting in a lack of uniformity in the InN incorporation across samples, and the disruption of the structure which could cause a narrowing of the quantum wells (QWs) in this region. Atomic force microscopy has revealed that chevrons can penetrate over 150 nm into the sample and quench light emission from the active layers. The dominance of non-radiative recombination in the chevron region was exposed by simultaneous measurement of CL and the electron beam-induced current. Overall, these results provide an overview of the nature and impact of chevrons on the luminescence of semi-polar devices.

Lattice-mismatched GaInP LED devices and methods of fabricating same

DOEpatents

Mascarenhas, Angelo; Steiner, Myles A; Bhusal, Lekhnath; Zhang, Yong

2014-10-21

A method (100) of fabricating an LED or the active regions of an LED and an LED (200). The method includes growing, depositing or otherwise providing a bottom cladding layer (208) of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (208). A first active layer (202) may be grown above the bottom cladding layer (208) wherein the first active layer (202) is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer (202) will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer (204) above the first active layer (202) where the second active layer (204) Is fabricated from the same semiconductor alloy.

A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect

NASA Astrophysics Data System (ADS)

Ghaffari, Majid; Orouji, Ali A.

2018-06-01

Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.

Air-coupled acoustic thermography for in-situ evaluation

NASA Technical Reports Server (NTRS)

Zalameda, Joseph N. (Inventor); Winfree, William P. (Inventor); Yost, William T. (Inventor)

2010-01-01

Acoustic thermography uses a housing configured for thermal, acoustic and infrared radiation shielding. For in-situ applications, the housing has an open side adapted to be sealingly coupled to a surface region of a structure such that an enclosed chamber filled with air is defined. One or more acoustic sources are positioned to direct acoustic waves through the air in the enclosed chamber and towards the surface region. To activate and control each acoustic source, a pulsed signal is applied thereto. An infrared imager focused on the surface region detects a thermal image of the surface region. A data capture device records the thermal image in synchronicity with each pulse of the pulsed signal such that a time series of thermal images is generated. For enhanced sensitivity and/or repeatability, sound and/or vibrations at the surface region can be used in feedback control of the pulsed signal applied to the acoustic sources.

Development of a Multi-layer Anti-reflective Coating for Gallium Arsenide/Aluminum Gallium Arsenide Solar Cells

DTIC Science & Technology

2015-07-01

optical loss mechanism, which limits the efficiency of the PV device.1 Photon absorption needs to occur inside the solar cell active region (near the...Aluminum Gallium Arsenide Solar Cells by Kimberley A Olver Approved for public release; distribution unlimited...Development of a Multi-layer Anti-reflective Coating for Gallium Arsenide/Aluminum Gallium Arsenide Solar Cells by Kimberley A Olver

Regional Changes in Word-Production Laterality after a Naming Treatment Designed to Produce a Rightward Shift in Frontal Activity

ERIC Educational Resources Information Center

Crosson, Bruce; Moore, Anna Bacon; McGregor, Keith M.; Chang, Yu-Ling; Benjamin, Michelle; Gopinath, Kaundinya; Sherod, Megan E.; Wierenga, Christina E.; Peck, Kyung K.; Briggs, Richard W.; Rothi, Leslie J. Gonzalez; White, Keith D.

2009-01-01

Five nonfluent aphasia patients participated in a picture-naming treatment that used an intention manipulation (opening a box and pressing a button on a device in the box with the left hand) to initiate naming trials and was designed to re-lateralize word production mechanisms from the left to the right frontal lobe. To test the underlying…

On-chip photonic-phononic emitter-receiver apparatus

DOEpatents

Cox, Jonathan Albert; Jarecki, Jr., Robert L.; Rakich, Peter Thomas; Wang, Zheng; Shin, Heedeuk; Siddiqui, Aleem; Starbuck, Andrew Lea

2017-07-04

A radio-frequency photonic devices employs photon-phonon coupling for information transfer. The device includes a membrane in which a two-dimensionally periodic phononic crystal (PnC) structure is patterned. The device also includes at least a first optical waveguide embedded in the membrane. At least a first line-defect region interrupts the PnC structure. The first optical waveguide is embedded within the line-defect region.

Lubricant-impregnated surfaces for electrochemical applications, and devices and systems using same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solomon, Brian Richmond; Chen, Xinwei; Chiang, Yet-Ming

In certain embodiments, the invention relates to an electrochemical device having a liquid lubricant impregnated surface. At least a portion of the interior surface of the electrochemical device includes a portion that includes a plurality of solid features disposed therein. The plurality of solid features define a plurality of regions therebetween. A lubricant is disposed in the plurality of regions which retain the liquid lubricant in the plurality of regions during operation of the device. An electroactive phase comes in contact with at least the portion of the interior surface. The liquid lubricant impregnated surface introduces a slip at themore » surface when the electroactive phase flows along the surface. The electroactive phase may be a yield stress fluid.« less

Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Phillips, Wayne (Inventor); Borshchevsky, Alex (Inventor); Kolawa, Elizabeth A. (Inventor); Ryan, Margaret A. (Inventor); Caillat, Thierry (Inventor); Mueller, Peter (Inventor); Snyder, G. Jeffrey (Inventor); Kascich, Thorsten (Inventor)

2002-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Ryan, Margaret A. (Inventor); Borshchevsky, Alex (Inventor); Phillips, Wayne (Inventor); Kolawa, Elizabeth A. (Inventor); Snyder, G. Jeffrey (Inventor); Caillat, Thierry (Inventor); Kascich, Thorsten (Inventor); Mueller, Peter (Inventor)

2004-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Thermal Control Using Electrochromism

NASA Technical Reports Server (NTRS)

Vaidyanathan, Hari; Rao, Gopalakrishna

1998-01-01

The applicability of a charge balanced electrochromic device to modulate the frequencies in the thermal infra red region is examined in this study. The device consisted of a transparent conductor, WO3 anode, PMMA/LiClO4, electrolyte, V2O5, cathode and transparent conductor. The supporting structure in the device is SnO2 coated glass and the edges are sealed with epoxy to reduce moisture absorption. The performance evaluation comprised of cyclic voltammetric measurements and determination of transmittance at various wavelengths. The device was subjected to anodic and cathodic polarization by sweeping the potential at a rate of 10 mV/sec from -0.8 V to 1.8 V. The current versus voltage profile indicated no reaction between -0.5 and +0.5 V. The device is colored green at 1.8 V with a transmittance of 5% at a wavelength, lambda = 900 nm and colorless at -0.8 V with a transmittance of 74% at X = 500 nm. The optical modulation is limited to 400-1500 nm and there is no activity in the thermal infrared. The switching time is 75 seconds for transmittance to decrease from 74% to 50%. The device yielded reproducible values for transmittance when cycled between colored and bleached states by application of 1.8 V and -0.8 V, respectively.

Thermal Control Using Electrochromism

NASA Technical Reports Server (NTRS)

Vaidyanathan, Hari; Rao, Gopalakrishna

1999-01-01

The applicability of a charge balanced electrochromic device to modulate the frequencies in the thermal infrared region is examined in this study. The device consisted of a transparent conductor, WO3, anode, PMMA/LiClO4 electrolyte, V2O5 cathode and transparent conductor. The supporting structure in the device is SnO2 coated glass and the edges are sealed with epoxy to reduce moisture absorption. The performance evaluation comprised of cyclic voltammetric measurements and determination of transmittance at various wavelengths. The device was subjected to anodic and cathodic polarization by sweeping the potential at a rate of 10 mV/sec from -0.8V to 1.8V. The current versus voltage profile indicated no reaction between -0.5 and +0.5 V. The device is colored green at 1.8 V with a transmittance of 5% at a wavelength, lambda = 900 nm and colorless at -0.8 V with a transmittance of 74% at lambda = 500 nm. The optical modulation is limited to 400-1500 nm and there is no activity in the thermal infrared. The switching time is a function of temperature and time for coloring reaction was slower than the bleaching reaction. The device yielded reproducible values for transmittance when cycled between colored and bleached states by application of 1.8V and -0.8V, respectively.

Thermal Control using Electrochromism

NASA Technical Reports Server (NTRS)

Vaidyanathan, Hari; Rao, Gopalakrishna

1998-01-01

The applicability of a charge balanced electrochromic device to modulate the frequencies in the thermal infrared region is examined in this study. The device consisted of a transparent conductor, WO3 anode, PMMA/LiClO4 electrolyte, V2O5 cathode and transparent conductor. The supporting structure in the device is SnO2 coated glass and the edges are sealed with epoxy to reduce moisture absorption. The performance evaluation comprised of cyclic voltammetric measurements and determination of transmittance at various wavelengths. The device was subjected to anodic and cathodic polarization by sweeping the potential at a rate of 10 mV/sec from -0.8V to 1.8V. The current versus voltage profile indicated no reaction between -0.5 and +0.5 V. The device is colored green at 1.8V with a transmittance of 5% at a wavelength, lambda=900 nm and colorless at -0.8V with a transmittance of 74% at lambda=500 nm. The optical modulation is limited to 400-1500 nm and there is no activity in the thermal infrared. The switching time is 75 seconds for transmittance to decrease from 74% to 50%. The device yielded reproducible values for transmittance when cycled between colored and bleached states by application of 1.8V and -0.8V, respectively.

Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Karachinsky, L. Ya.; Novikov, I. I.; Gladyshev, A. G.; Mikhailov, S.; Iakovlev, V.; Sirbu, A.; Stepniak, G.; Chorchos, L.; Turkiewicz, J. P.; Agustin, M.; Ledentsov, N. N.; Voropaev, K. O.; Ionov, A. S.; Egorov, A. Yu.

2017-02-01

We report for the first time on wafer-fused InGaAs-InP/AlGaAs-GaAs 1550 nm vertical-cavity surface-emitting lasers (VCSELs) incorporating a InAlGaAs/InP MQW active region with re-grown tunnel junction sandwiched between top and bottom undoped AlGaAs/GaAs distributed Bragg reflectors (DBRs) all grown by molecular beam epitaxy. InP-based active region includes seven compressively strained quantum wells (2.8 nm) optimized to provide high differential gain. Devices with this active region demonstrate lasing threshold current < 2.5 mA and output optical power > 2 mW in the temperature range of 10-70°C. The wall-plug efficiency (WPE) value-reaches 20 %. Lasing spectra show single mode CW operation with a longitudinal side mode suppression ratio (SMSR) up to 45 dB at > 2 mW output power. Small signal modulation response measurements show a 3-dB modulation bandwidth of 9 GHz at pump current of 10 mA and a D-factor value of 3 GHz/(mA)1/2. Open-eye diagram at 30 Gb/s of standard NRZ is demonstrated. Achieved CW and modulation performance is quite sufficient for fiber to the home (FTTH) applications where very large volumes of low-cost lasers are required.

Surface electromyography and plantar pressure changes with novel gait training device in participants with chronic ankle instability.

PubMed

Feger, Mark A; Hertel, Jay

2016-08-01

Rehabilitation is ineffective at restoring normal gait in chronic ankle instability patients. Our purpose was to determine if a novel gait-training device could decrease plantar pressure on the lateral column of the foot in chronic ankle instability patients. Ten chronic ankle instability patients completed 30s trials of baseline and gait-training walking at a self-selected pace while in-shoe plantar pressure and surface electromyography were recorded from their anterior tibialis, peroneus longus, medial gastrocnemius, and gluteus medius. The gait-training device applied a medially-directed force to the lower leg via elastic bands during the entire gait cycle. Plantar pressure measures of the entire foot and 9 specific regions of the foot as well as surface electromyography root mean square areas were compared between the baseline and gait-training conditions using paired t-tests with a priori level of significance of p≤0.05. The gait-training device decreased pressure time integrals and peak pressures in the lateral midfoot (p=0.003 and p=0.003) and lateral forefoot (p=0.023 and p=0.005), and increased pressure time integrals and peak pressures for the total foot (p=0.030 and p=0.017) and hallux (p=0.005 and p=0.002). The center of pressure was shifted medially during the entire stance phase (p<0.003 for all comparisons) due to increased peroneus longus activity prior to (p=0.002) and following initial contact (p=0.002). The gait-training device decreased pressure on the lateral column of the foot and increased peroneus longus muscle activity. Future research should analyze the efficacy of the gait-training device during gait retraining for chronic ankle instability. Copyright © 2016 Elsevier Ltd. All rights reserved.

Method and apparatus for optical phase error correction

DOEpatents

DeRose, Christopher; Bender, Daniel A.

2014-09-02

The phase value of a phase-sensitive optical device, which includes an optical transport region, is modified by laser processing. At least a portion of the optical transport region is exposed to a laser beam such that the phase value is changed from a first phase value to a second phase value, where the second phase value is different from the first phase value. The portion of the optical transport region that is exposed to the laser beam can be a surface of the optical transport region or a portion of the volume of the optical transport region. In an embodiment of the invention, the phase value of the optical device is corrected by laser processing. At least a portion of the optical transport region is exposed to a laser beam until the phase value of the optical device is within a specified tolerance of a target phase value.

System and method for confining an object to a region of fluid flow having a stagnation point

NASA Technical Reports Server (NTRS)

Schroeder, Charles M. (Inventor); Babcock, Hazen P. (Inventor); Shaqfeh, Eric S. G. (Inventor); Chu, Steven (Inventor)

2006-01-01

A device for confining an object to a region proximate to a fluid flow stagnation point includes one or more inlets for carrying the fluid into the region, one or more outlets for carrying the fluid out of the region, and a controller, in fluidic communication with the inlets and outlets, for adjusting the motion of the fluid to produce a stagnation point in the region, thereby confining the object to the region. Applications include, for example, prolonged observation of the object, manipulation of the object, etc. The device optionally may employ a feedback control mechanism, a sensing apparatus (e.g., for imaging), and a storage medium for storing, and a computer for analyzing and manipulating, data acquired from observing the object. The invention further provides methods of using such a device and system in a number of fields, including biology, chemistry, physics, material science, and medical science.

Organic photosensitive devices

DOEpatents

Peumans, Peter; Forrest, Stephen R.

2013-01-22

A photoactive device is provided. The device includes a first electrode, a second electrode, and a photoactive region disposed between and electrically connected to the first and second electrodes. The photoactive region further includes an organic donor layer and an organic acceptor layer that form a donor-acceptor heterojunction. The mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region are different by a factor of at least 100, and more preferably a factor of at least 1000. At least one of the mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region is greater than 0.001 cm.sup.2/V-sec, and more preferably greater than 1 cm.sup.2/V-sec. The heterojunction may be of various types, including a planar heterojunction, a bulk heterojunction, a mixed heterojunction, and a hybrid planar-mixed heterojunction.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2015-09-08

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2013-11-26

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Electrokinetically driven active micro-mixers utilizing zeta potential variation induced by field effect

NASA Astrophysics Data System (ADS)

Lee, Chia-Yen; Lee, Gwo-Bin; Fu, Lung-Ming; Lee, Kuo-Hoong; Yang, Ruey-Jen

2004-10-01

This paper presents a new electrokinetically driven active micro-mixer which uses localized capacitance effects to induce zeta potential variations along the surface of silica-based microchannels. The mixer is fabricated by etching bulk flow and shielding electrode channels into glass substrates and then depositing Au/Cr thin films within the latter to form capacitor electrodes, which establish localized zeta potential variations near the electrical double layer (EDL) region of the electroosmotic flow (EOF) within the microchannels. The potential variations induce flow velocity changes within a homogeneous fluid and a rapid mixing effect if an alternating electric field is provided. The current experimental data confirm that the fluid velocity can be actively controlled by using the capacitance effect of the buried shielding electrodes to vary the zeta potential along the channel walls. While compared with commonly used planar electrodes across the microchannels, the buried shielding electrodes prevent current leakage caused by bad bonding and allow direct optical observation during operation. It also shows that the buried shielding electrodes can significantly induce the field effect, resulting in higher variations of zeta potential. Computational fluid dynamic simulations are also used to study the fluid characteristics of the developed active mixers. The numerical and experimental results demonstrate that the developed microfluidic device permits a high degree of control over the fluid flow and an efficient mixing effect. Moreover, the developed device could be used as a pumping device as well. The development of the active electrokinetically driven micro-mixer could be crucial for micro-total-analysis-systems.

Electrically excited hot-electron dominated fluorescent emitters using individual Ga-doped ZnO microwires via metal quasiparticle film decoration.

PubMed

Liu, Yang; Jiang, Mingming; Zhang, Zhenzhong; Li, Binghui; Zhao, Haifeng; Shan, Chongxin; Shen, Dezhen

2018-03-28

The generation of hot electrons from metal nanostructures through plasmon decay provided a direct interfacial charge transfer mechanism, which no longer suffers from the barrier height restrictions observed for metal/semiconductor interfaces. Metal plasmon-mediated energy conversion with higher efficiency has been proposed as a promising alternative to construct novel optoelectronic devices, such as photodetectors, photovoltaic and photocatalytic devices, etc. However, the realization of the electrically-driven generation of hot electrons, and the application in light-emitting devices remain big challenges. Here, hybrid architectures comprising individual Ga-doped ZnO (ZnO:Ga) microwires via metal quasiparticle film decoration were fabricated. The hottest spots could be formed towards the center of the wires, and the quasiparticle films were converted into physically isolated nanoparticles by applying a bias onto the wires. Thus, the hot electrons became spatially localized towards the hottest regions, leading to a release of energy in the form of emitting photons. By adjusting the sputtering times and appropriate alloys, such as Au and Ag, wavelength-tunable emissions could be achieved. To exploit the EL emission characteristics, metal plasmons could be used as active elements to mediate the generation of hot electrons from metal nanostructures, which are located in the light-emitting regions, followed by injection into ZnO:Ga microwire-channels; thus, the production of plasmon decay-induced hot-electrons could function as an efficient approach to dominate emission wavelengths. Therefore, by introducing metal nanostructure decoration, individual ZnO:Ga microwires can be used to construct wavelength-tunable fluorescent emitters. The hybrid architectures of metal-ZnO micro/nanostructures offer a fantastic candidate to broaden the potential applications of semiconducting optoelectronic devices, such as photovoltaic devices, photodetectors, optoelectronic sensors, etc.

High-power green and blue electron-beam pumped surface-emitting lasers using dielectric and epitaxial distributed Bragg reflectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klein, T., E-mail: tklein@ifp.uni-bremen.de; Klembt, S.; Institut Néel, Université Grenoble Alpes and CNRS, B.P. 166, 38042 Grenoble

2015-03-21

ZnSe-based electron-beam pumped vertical-cavity surface-emitting lasers for the green (λ = 530 nm) and blue (λ = 462 nm) spectral region have been realized. Structures with and without epitaxial bottom distributed Bragg reflector have been fabricated and characterized. The samples consist of an active region containing 20 quantum wells with a cavity length varying between an optical thickness of 10 λ to 20 λ. The active material is ZnCdSSe in case of the green devices and ZnSe for the blue ones. Room temperature single mode lasing for structures with and without epitaxial bottom mirror with a maximum output power up to 5.9 W (green) and 3.3 W (blue)more » is achieved, respectively.« less

Temperature independent infrared responsivity of a quantum dot quantum cascade photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Feng-Jiao; Zhuo, Ning; Liu, Shu-Man, E-mail: liusm@semi.ac.cn

2016-06-20

We demonstrate a quantum dot quantum cascade photodetector with a hybrid active region of InAs quantum dots and an InGaAs quantum well, which exhibited a temperature independent response at 4.5 μm. The normal incident responsivity reached 10.3 mA/W at 120 K and maintained a value of 9 mA/W up to 260 K. It exhibited a specific detectivity above 10{sup 11} cm Hz{sup 1/2} W{sup −1} at 77 K, which remained at 10{sup 8} cm Hz{sup 1/2} W{sup −1} at 260 K. We ascribe the device's good thermal stability of infrared response to the three-dimensional quantum confinement of the InAs quantum dots incorporated in the active region.

Wide-range radioactive-gas-concentration detector

DOEpatents

Anderson, D.F.

1981-11-16

A wide-range radioactive-gas-concentration detector and monitor capable of measuring radioactive-gas concentrations over a range of eight orders of magnitude is described. The device is designed to have an ionization chamber sufficiently small to give a fast response time for measuring radioactive gases but sufficiently large to provide accurate readings at low concentration levels. Closely spaced parallel-plate grids provide a uniform electric field in the active region to improve the accuracy of measurements and reduce ion migration time so as to virtually eliminate errors due to ion recombination. The parallel-plate grids are fabricated with a minimal surface area to reduce the effects of contamination resulting from absorption of contaminating materials on the surface of the grids. Additionally, the ionization-chamber wall is spaced a sufficient distance from the active region of the ionization chamber to minimize contamination effects.

High energy storage capacitor by embedding tunneling nano-structures

DOEpatents

Holme, Timothy P; Prinz, Friedrich B; Van Stockum, Philip B

2014-11-04

In an All-Electron Battery (AEB), inclusions embedded in an active region between two electrodes of a capacitor provide enhanced energy storage. Electrons can tunnel to/from and/or between the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. One or more barrier layers is present in an AEB to block DC current flow through the device. The AEB effect can be enhanced by using multi-layer active regions having inclusion layers with the inclusions separated by spacer layers that don't have the inclusions. The use of cylindrical geometry or wrap around electrodes and/or barrier layers in a planar geometry can enhance the basic AEB effect. Other physical effects that can be employed in connection with the AEB effect are excited state energy storage, and formation of a Bose-Einstein condensate (BEC).

Thermoelectric power source utilizing ambient energy harvesting for remote sensing and transmitting

DOEpatents

DeSteese, John G

2010-11-16

A method and apparatus for providing electrical energy to an electrical device wherein the electrical energy is originally generated from temperature differences in an environment having a first and a second temperature region. A thermoelectric device having a first side and a second side wherein the first side is in communication with a means for transmitting ambient thermal energy collected or rejected in the first temperature region and the second side is in communication with the second temperature region thereby producing a temperature gradient across the thermoelectric device and in turn generating an electrical current.

Resonant metamaterial detectors based on THz quantum-cascade structures

PubMed Central

Benz, A.; Krall, M.; Schwarz, S.; Dietze, D.; Detz, H.; Andrews, A. M.; Schrenk, W.; Strasser, G.; Unterrainer, K.

2014-01-01

We present the design, fabrication and characterisation of an intersubband detector employing a resonant metamaterial coupling structure. The semiconductor heterostructure relies on a conventional THz quantum-cascade laser design and is operated at zero bias for the detector operation. The same active region can be used to generate or detect light depending on the bias conditions and the vertical confinement. The metamaterial is processed directly into the top metal contact and is used to couple normal incidence radiation resonantly to the intersubband transitions. The device is capable of detecting light below and above the reststrahlenband of gallium-arsenide corresponding to the mid-infrared and THz spectral region. PMID:24608677

Assessment of an active industrial exoskeleton to aid dynamic lifting and lowering manual handling tasks.

PubMed

Huysamen, Kirsten; de Looze, Michiel; Bosch, Tim; Ortiz, Jesus; Toxiri, Stefano; O'Sullivan, Leonard W

2018-04-01

The aim of this study was to evaluate the effect of an industrial exoskeleton on muscle activity, perceived musculoskeletal effort, measured and perceived contact pressure at the trunk, thighs and shoulders, and subjective usability for simple sagittal plane lifting and lowering conditions. Twelve male participants lifted and lowered a box of 7.5 kg and 15 kg, respectively, from mid-shin height to waist height, five times, both with and without the exoskeleton. The device significantly reduced muscle activity of the Erector Spinae (12%-15%) and Biceps Femoris (5%). Ratings of perceived musculoskeletal effort in the trunk region were significantly less with the device (9.5%-11.4%). The measured contact pressure was highest on the trunk (91.7 kPa-93.8 kPa) and least on shoulders (47.6 kPa-51.7 kPa), whereas pressure was perceived highest on the thighs (35-44% of Max LPP). Six of the users rated the device usability as acceptable. The exoskeleton reduced musculoskeletal loading on the lower back and assisted with hip extensor torque during lifting and lowering. Contact pressures fell below the Pain Pressure Threshold. Perceived pressure was not exceptionally high, but sufficiently high to cause discomfort if used for long durations. Copyright © 2017 Elsevier Ltd. All rights reserved.

ACTIVE DELIVERY CABLE TUNED TO DEVICE DEPLOYMENT STATE: ENHANCED VISIBILITY OF NITINOL OCCLUDERS DURING PRE-CLINICAL INTERVENTIONAL MRI

PubMed Central

Bell, Jamie A.; Saikus, Christina E.; Ratnayaka, Kanishka; Barbash, Israel M.; Faranesh, Anthony Z.; Franson, Dominique N.; Sonmez, Merdim; Slack, Michael C.; Lederman, Robert J.; Kocaturk, Ozgur

2012-01-01

Purpose To develop an active delivery system that enhances visualization of nitinol cardiac occluder devices during deployment under real-time MRI. Materials and Methods We constructed an active delivery cable incorporating a loopless antenna and a custom titanium microscrew to secure the occluder devices. The delivery cable was tuned and matched to 50Ω at 64 MHz with the occluder device attached. We used real-time balanced SSFP in a wide-bore 1.5T scanner. Device-related images were reconstructed separately and combined with surface-coil images. The delivery cable was tested in vitro in a phantom and in vivo in swine using a variety of nitinol cardiac occluder devices. Results In vitro, the active delivery cable provided little signal when the occluder device was detached and maximal signal with the device attached. In vivo, signal from the active delivery cable enabled clear visualization of occluder device during positioning and deployment. Device release resulted in decreased signal from the active cable. Post-mortem examination confirmed proper device placement. Conclusions The active delivery cable enhanced the MRI depiction of nitinol cardiac occluder devices during positioning and deployment, both in conventional and novel applications. We expect enhanced visibility to contribute to effectiveness and safety of new and emerging MRI-guided treatments. PMID:22707441

Improvised Explosive Devices: Unclear Whether Culvert Denial Systems to Protect Troops are Functioning or Were Ever Installed

DTIC Science & Technology

2013-07-23

Regional Command-South. At least 4 of the contracts awarded by RCC-Kandahar were blanket purchase agreements ( BPA ) with multiple task orders against them...for the construction of culvert denial systems. Of the BPAs that we reviewed, both W91B4L-11-A-0031 (82 task orders) and W91B4L-11-A-0034 (14 task...orders) are no longer active. However, W91B4L-11-A-0033 (currently 117 task orders) and W91B4L-11-A-0037 (currently 198 task orders) are active BPAs

Sensing Device with Whisker Elements

NASA Technical Reports Server (NTRS)

Hartmann, Mitra J. (Inventor); Solomon, Joseph H. (Inventor)

2013-01-01

A sensing device includes an elongated whisker element having a flexible cantilever region and a base region where a change in moment or curvature is generated by bending of the cantilever region when it contacts an object. One or more sensor elements cooperatively associated with the whisker element provide one or more output signals that is/are representative of two orthogonal components of change in moment or curvature at the whisker base region to permit determination of object distance, fluid velocity profile, or object contour (shape) with accounting for lateral slip of the whisker element and frictional characteristics of the object. Multiple sensing devices can be arranged in arrays in a manner to sense object contour without or with adjustment for lateral slip.

Sensing device with whisker elements

NASA Technical Reports Server (NTRS)

Hartmann, Mitra J. (Inventor); Solomon, Joseph H. (Inventor)

2010-01-01

A sensing device includes an elongated whisker element having a flexible cantilever region and a base region where a change in moment or curvature is generated by bending of the cantilever region when it contacts an object. One or more sensor elements cooperatively associated with the whisker element provide one or more output signals that is/are representative of two orthogonal components of change in moment or curvature at the whisker base region to permit determination of object distance, fluid velocity profile, or object contour (shape) with accounting for lateral slip of the whisker element and frictional characteristics of the object. Multiple sensing devices can be arranged in arrays in a manner to sense object contour without or with adjustment for lateral slip.

Probing scattering mechanisms with symmetric quantum cascade lasers.

PubMed

Deutsch, Christoph; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron M; Klang, Pavel; Kubis, Tillmann; Klimeck, Gerhard; Schuster, Manfred E; Schrenk, Werner; Strasser, Gottfried; Unterrainer, Karl

2013-03-25

A characteristic feature of quantum cascade lasers is their unipolar carrier transport. We exploit this feature and realize nominally symmetric active regions for terahertz quantum cascade lasers, which should yield equal performance with either bias polarity. However, symmetric devices exhibit a strongly bias polarity dependent performance due to growth direction asymmetries, making them an ideal tool to study the related scattering mechanisms. In the case of an InGaAs/GaAsSb heterostructure, the pronounced interface asymmetry leads to a significantly better performance with negative bias polarity and can even lead to unidirectionally working devices, although the nominal band structure is symmetric. The results are a direct experimental proof that interface roughness scattering has a major impact on transport/lasing performance.

21 CFR 890.5050 - Daily activity assist device.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily activity...

21 CFR 890.5050 - Daily activity assist device.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily activity...

21 CFR 890.5050 - Daily activity assist device.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily activity...

21 CFR 890.5050 - Daily activity assist device.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily activity...

21 CFR 890.5050 - Daily activity assist device.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily activity...

21 CFR 870.2780 - Hydraulic, pneumatic, or photoelectric plethysmographs.

Code of Federal Regulations, 2012 CFR

2012-04-01

... HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices..., pneumatic, or photoelectric plethysmograph is a device used to estimate blood flow in a region of the body using hydraulic, pneumatic, or photoelectric measurement techniques. (b) Classification. Class II...

21 CFR 870.2780 - Hydraulic, pneumatic, or photoelectric plethysmographs.

Code of Federal Regulations, 2014 CFR

2014-04-01

... HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices..., pneumatic, or photoelectric plethysmograph is a device used to estimate blood flow in a region of the body using hydraulic, pneumatic, or photoelectric measurement techniques. (b) Classification. Class II...

21 CFR 870.2780 - Hydraulic, pneumatic, or photoelectric plethysmographs.

Code of Federal Regulations, 2013 CFR

2013-04-01

... HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices..., pneumatic, or photoelectric plethysmograph is a device used to estimate blood flow in a region of the body using hydraulic, pneumatic, or photoelectric measurement techniques. (b) Classification. Class II...

High-voltage compatible, full-depleted CCD

DOEpatents

Holland, Stephen Edward

2007-09-18

A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.

High-power Al-free active region (λ= 852nm) DFB laser diodes for atomic clocks and interferometry applications

NASA Astrophysics Data System (ADS)

Ligeret, V.; Vermersch, F.-J.; Bansropun, S.; Lecomte, M.; Calligaro, M.; Parillaud, O.; Krakowski, M.

2017-11-01

Atomic clocks will be used in the future European positioning system Galileo. Among them, the optically pumped clocks provide a better alternative with comparable accuracy for a more compact system. For these systems, diode lasers emitting at 852nm are strategic components. The laser in a conventional bench for atomic clocks presents disadvantages for spatial applications. A better approach would be to realise a system based on a distributed-feedback laser (DFB). We have developed the technological foundations of such lasers operating at 852nm. These include an Al free active region, a single spatial mode ridge waveguide and a DFB structure. The device is a separate confinement heterostructure with a GaInP large optical cavity and a single compressive strained GaInAsP quantum well. The broad area laser diodes are characterised by low internal losses (<3cm -1 ), a high internal efficiency (94%) and a low transparency current density (100A/cm2). For an AR-HR coated ridge Fabry Perot laser, we obtain a power of 230mW with M2=1.3. An optical power of 150mW was obtained at 854nm wavelength, 20°C for AR-HR coated devices. We obtain a single spatial mode emission with M2=1.21 and a SMSR over 30dB, both at 150mW. DFB Lasers at 852.12nm, corresponding to the D2 caesium transition, were then realised with a power of 40mW, 37°C for uncoated devices. The SMSR is over 30dB and the M2=1.33 at 40mW. Furthermore, the preliminary results of the linewidth obtained with a Fabry Perot interferometer give a value of less than 2MHz.

Anatomy of the obturator region: relations to a trans-obturator sling.

PubMed

Whiteside, James L; Walters, Mark D

2004-01-01

Our objective was to determine the relationships between a trans-obturator sling and anatomic structures within the obturator region. The obturator regions of six cadavers were dissected and distances from the mid-point of the ischiopubic ramus to the muscles, nerves, and vessels of the region were measured. A trans-obturator sling was placed and distances from the device to the same anatomic structures were determined. Four additional cadavers were dissected to determine the device route of passage. The obturator canal is on average 4.4 cm from the midpoint of the ischiopubic rami. The trans-obturator sling passes on average 2.4 cm inferior-medial to the obturator canal. The anterior and posterior divisions of the obturator nerve are on average 3.4 and 2.8 cm, respectively, from a passed trans-obturator device. The device passed on average 1.1 cm from the most medial branch of the obturator vessels. Vascular and nerve structures are within 1-3 cm of the path of any device passed through the obturator foramen. A trans-obturator sling risks injury to these structures, although the small caliber of the vessels and the confined space in which they would bleed make the consequences of injury uncertain.

Thermal Actuation Based 3-DoF Non-Resonant Microgyroscope Using MetalMUMPs

PubMed Central

Shakoor, Rana Iqtidar; Bazaz, Shafaat Ahmed; Kraft, Michael; Lai, Yongjun; Masood ul Hassan, Muhammad

2009-01-01

High force, large displacement and low voltage consumption are a primary concern for microgyroscopes. The chevron-shaped thermal actuators are unique in terms of high force generation combined with the large displacements at a low operating voltage in comparison with traditional electrostatic actuators. A Nickel based 3-DoF micromachined gyroscope comprising 2-DoF drive mode and 1-DoF sense mode oscillator utilizing the chevron-shaped thermal actuators is presented here. Analytical derivations and finite element simulations are carried out to predict the performance of the proposed device using the thermo-physical properties of electroplated nickel. The device sensitivity is improved by utilizing the dynamical amplification of the oscillation in 2-DoF drive mode using an active-passive mass configuration. A comprehensive theoretical description, dynamics and mechanical design considerations of the proposed gyroscopes model are discussed in detail. Parametric optimization of gyroscope, its prototype modeling and fabrication using MetalMUMPs has also been investigated. Dynamic transient simulation results predicted that the sense mass of the proposed device achieved a drive displacement of 4.1μm when a sinusoidal voltage of 0.5V is applied at 1.77 kHz exhibiting a mechanical sensitivity of 1.7μm /°/s in vacuum. The wide bandwidth frequency response of the 2-DoF drive mode oscillator consists of two resonant peaks and a flat region of 2.11 kHz between the peaks defining the operational frequency region. The sense mode resonant frequency can lie anywhere within this region and therefore the amplitude of the response is insensitive to structural parameter variations, enhancing device robustness against such variations. The proposed device has a size of 2.2 × 2.6 mm2, almost one third in comparison with existing M-DoF vibratory gyroscope with an estimated power consumption of 0.26 Watts. These predicted results illustrate that the chevron-shaped thermal actuator has a large voltage-stroke ratio shifting the paradigm in MEMS gyroscope design from the traditional interdigitated comb drive electrostatic actuator. These actuators have low damping compared to electrostatic comb drive actuators which may result in high quality factor microgyroscopes operating at atmospheric pressure. PMID:22574020

Brain activity during a lower limb functional task in a real and virtual environment: A comparative study.

PubMed

Pacheco, Thaiana Barbosa Ferreira; Oliveira Rego, Isabelle Ananda; Campos, Tania Fernandes; Cavalcanti, Fabrícia Azevedo da Costa

2017-01-01

Virtual Reality (VR) has been contributing to Neurological Rehabilitation because of its interactive and multisensory nature, providing the potential of brain reorganization. Given the use of mobile EEG devices, there is the possibility of investigating how the virtual therapeutic environment can influence brain activity. To compare theta, alpha, beta and gamma power in healthy young adults during a lower limb motor task in a virtual and real environment. Ten healthy adults were submitted to an EEG assessment while performing a one-minute task consisted of going up and down a step in a virtual environment - Nintendo Wii virtual game "Basic step" - and in a real environment. Real environment caused an increase in theta and alpha power, with small to large size effects mainly in the frontal region. VR caused a greater increase in beta and gamma power, however, with small or negligible effects on a variety of regions regarding beta frequency, and medium to very large effects on the frontal and the occipital regions considering gamma frequency. Theta, alpha, beta and gamma activity during the execution of a motor task differs according to the environment that the individual is exposed - real or virtual - and may have varying size effects if brain area activation and frequency spectrum in each environment are taken into consideration.

Electron-beam-induced information storage in hydrogenated amorphous silicon device

DOEpatents

Yacobi, Ben G.

1986-01-01

A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.

Apparatus for fixing latency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hall, David R; Bartholomew, David B; Moon, Justin

2009-09-08

An apparatus for fixing computational latency within a deterministic region on a network comprises a network interface modem, a high priority module and at least one deterministic peripheral device. The network interface modem is in communication with the network. The high priority module is in communication with the network interface modem. The at least one deterministic peripheral device is connected to the high priority module. The high priority module comprises a packet assembler/disassembler, and hardware for performing at least one operation. Also disclosed is an apparatus for executing at least one instruction on a downhole device within a deterministic region,more » the apparatus comprising a control device, a downhole network, and a downhole device. The control device is near the surface of a downhole tool string. The downhole network is integrated into the tool string. The downhole device is in communication with the downhole network.« less

Method for partially coating laser diode facets

NASA Technical Reports Server (NTRS)

Dholakia, Anil R. (Inventor)

1990-01-01

Bars of integral laser diode devices cleaved from a wafer are placed with their p regions abutting and n regions abutting. A thin BeCu mask having alternate openings and strips of the same width as the end facets is used to mask the n region interfaces so that multiple bars can be partially coated over their exposed p regions with a reflective or partial reflective coating. The partial coating permits identification of the emitting facet from the fully coated back facet during a later device mounting procedure.

Magnetic field effect in organic films and devices

NASA Astrophysics Data System (ADS)

Gautam, Bhoj Raj

In this work, we focused on the magnetic field effect in organic films and devices, including organic light emitting diodes (OLEDs) and organic photovoltaic (OPV) cells. We measured magnetic field effect (MFE) such as magnetoconductance (MC) and magneto-electroluminescence (MEL) in OLEDs based on several pi- conjugated polymers and small molecules for fields |B|<100 mT. We found that both MC(B) and MEL(B) responses in bipolar devices and MC(B) response in unipolar devices are composed of two B-regions: (i) an 'ultra-small' region at |B| < 1-2 mT, and (ii) a monotonic response region at |B| >˜2mT. Magnetic field effect (MFE) measured on three isotopes of Poly (dioctyloxy) phenylenevinylene (DOO-PPV) showed that both regular and ultra-small effects are isotope dependent. This indicates that MFE response in OLED is mainly due to the hyperfine interaction (HFI). We also performed spectroscopy of the MFE including magneto-photoinduced absorption (MPA) and magneto-photoluminescence (MPL) at steady state conditions in several systems. This includes pristine Poly[2-methoxy-5-(2-ethylhexyl-oxy)-1,4-phenylene-vinylene] (MEH-PPV) films, MEH-PPV films subjected to prolonged illumination, and MEH-PPV/[6,6]-Phenyl C61 butyric acid methyl ester (PCBM) blend, as well as annealed and pristine C60 thin films. For comparison, we also measured MC and MEL in organic diodes based on the same materials. By directly comparing the MPA and MPL responses in films to MC and MEL in organic diodes based on the same active layers, we are able to relate the MFE in organic diodes to the spin densities of the excitations formed in the device, regardless of whether they are formed by photon absorption or carrier injection from the electrodes. We also studied magneto-photocurrent (MPC) and power conversion efficiency (PCE) of a 'standard' Poly (3-hexylthiophene)/PCBM device at various Galvinoxyl radical wt%. We found that the MPC reduction with Galvinoxyl wt% follows the same trend as that of the PCE enhancement. In addition, we also measured the MPC response of a series of OPV cells. We attribute the observed broad MPC to short-lived charge transfer complex species, where spin mixing is caused by the difference, Deltag of the donor/acceptor g factors; whereas narrow MPC is due to HFI within long-lived polaron-pairs.

Non-synchronous control of self-oscillating resonant converters

DOEpatents

Glaser, John Stanley; Zane, Regan Andrew

2002-01-01

A self-oscillating switching power converter has a controllable reactance including an active device connected to a reactive element, wherein the effective reactance of the reactance and the active device is controlled such that the control waveform for the active device is binary digital and is not synchronized with the switching converter output frequency. The active device is turned completely on and off at a frequency that is substantially greater than the maximum frequency imposed on the output terminals of the active device. The effect is to vary the average resistance across the active device output terminals, and thus the effective output reactance, thereby providing converter output control, while maintaining the response speed of the converter.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Hyun-Sik; Jeon, Sanghun, E-mail: jeonsh@korea.ac.kr

Upon light exposure, an indium-zinc-oxide (IZO) thin-film transistor (TFT) presents higher photoconductivity by several orders of magnitude at the negative gate bias region. Among various device geometrical factors, scaling down the channel length of the photo-transistor results in an anomalous increase in photoconductivity. To probe the origin of this high photoconductivity in short-channel device, we measured transient current, current–voltage, and capacitance–voltage characteristics of IZO–TFTs with various channel lengths and widths before and after illumination. Under the illumination, the equilibrium potential region which lies far from front interface exists only in short-channel devices, forming the un-depleted conducting back channel. This regionmore » plays an important role in carrier transport under the illumination, leading to high photoconductivity in short-channel devices. Photon exposure coupled with gate-modulated band bending for short-channel devices leads to the accumulation of V{sub o}{sup ++} at the front channel and screening negative gate bias, thereby generating high current flow in the un-depleted back-channel region.« less

Electrospinning for nano- to mesoscale photonic structures

NASA Astrophysics Data System (ADS)

Skinner, Jack L.; Andriolo, Jessica M.; Murphy, John P.; Ross, Brandon M.

2017-08-01

The fabrication of photonic and electronic structures and devices has directed the manufacturing industry for the last 50 years. Currently, the majority of small-scale photonic devices are created by traditional microfabrication techniques that create features by processes such as lithography and electron or ion beam direct writing. Microfabrication techniques are often expensive and slow. In contrast, the use of electrospinning (ES) in the fabrication of micro- and nano-scale devices for the manipulation of photons and electrons provides a relatively simple and economic viable alternative. ES involves the delivery of a polymer solution to a capillary held at a high voltage relative to the fiber deposition surface. Electrostatic force developed between the collection plate and the polymer promotes fiber deposition onto the collection plate. Issues with ES fabrication exist primarily due to an instability region that exists between the capillary and collection plate and is characterized by chaotic motion of the depositing polymer fiber. Material limitations to ES also exist; not all polymers of interest are amenable to the ES process due to process dependencies on molecular weight and chain entanglement or incompatibility with other polymers and overall process compatibility. Passive and active electronic and photonic fibers fabricated through the ES have great potential for use in light generation and collection in optical and electronic structures/devices. ES produces fiber devices that can be combined with inorganic, metallic, biological, or organic materials for novel device design. Synergistic material selection and post-processing techniques are also utilized for broad-ranging applications of organic nanofibers that span from biological to electronic, photovoltaic, or photonic. As the ability to electrospin optically and/or electronically active materials in a controlled manner continues to improve, the complexity and diversity of devices fabricated from this process can be expected to grow rapidly and provide an alternative to traditional resource-intensive fabrication techniques.

Short-Term Environmental Effects and Their Influence on Spatial Homogeneity of Organic Solar Cell Functionality.

PubMed

Chien, Huei-Ting; Zach, Peter W; Friedel, Bettina

2017-08-23

In this study, we focus on the induced degradation and spatial inhomogeneity of organic photovoltaic devices under different environmental conditions, uncoupled from the influence of any auxiliary hole-transport (HT) layer. During testing of the corresponding devices comprising the standard photoactive layer of poly(3-hexylthiophene) as donor, blended with phenyl-C 61 -butyric acid methyl ester as acceptor, a comparison was made between the nonencapsulated devices upon exposure to argon in the dark, dry air in the dark, dry air with illumination, and humid air in the dark. The impact on the active layer's photophysics is discussed, along with the device physics in terms of integral solar cell performance and spatially resolved photocurrent distribution with point-to-point analysis of the diode characteristics to determine the origin of the observed integrated organic photovoltaic device behavior. The results show that even without the widely used hygroscopic HT layer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), humidity is still a major factor in the short-term environmental degradation of organic solar cells with this architecture, and not only oxygen or light, as is often reported. Different from previous reports where water-induced device degradation was spatially homogeneous and formation of Al 2 O 3 islands was only seen for oxygen permeation through pinholes in aluminum, we observed insulating islands merely after humidity exposure in the present study. Further, we demonstrated with laser beam induced current mapping and point-to-point diode analysis that the water-induced performance losses are a result of the exposed device area comprising regions with entirely unaltered high output and intact diode behavior and those with severe degradation showing detrimentally lowered output and voltage-independent charge blocking, which is essentially insulating behavior. It is suggested that this is caused by transport of water through pinholes to the organic/metal interface, where they form insulating oxide or hydroxide islands, while the organic active layer stays unharmed.

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption.

PubMed

Vurgaftman, I; Bewley, W W; Canedy, C L; Kim, C S; Kim, M; Merritt, C D; Abell, J; Lindle, J R; Meyer, J R

2011-12-13

The interband cascade laser differs from any other class of semiconductor laser, conventional or cascaded, in that most of the carriers producing population inversion are generated internally, at semimetallic interfaces within each stage of the active region. Here we present simulations demonstrating that all previous interband cascade laser performance has suffered from a significant imbalance of electron and hole densities in the active wells. We further confirm experimentally that correcting this imbalance with relatively heavy n-type doping in the electron injectors substantially reduces the threshold current and power densities relative to all earlier devices. At room temperature, the redesigned devices require nearly two orders of magnitude less input power to operate in continuous-wave mode than the quantum cascade laser. The interband cascade laser is consequently the most attractive option for gas sensing and other spectroscopic applications requiring low output power and minimum heat dissipation at wavelengths extending from 3 μm to beyond 6 μm.

Height-selective etching for regrowth of self-aligned contacts using MBE

NASA Astrophysics Data System (ADS)

Burek, G. J.; Wistey, M. A.; Singisetti, U.; Nelson, A.; Thibeault, B. J.; Bank, S. R.; Rodwell, M. J. W.; Gossard, A. C.

2009-03-01

Advanced III-V transistors require unprecedented low-resistance contacts in order to simultaneously scale bandwidth, fmax and ft with the physical active region [M.J.W. Rodwell, M. Le, B. Brar, in: Proceedings of the IEEE, 96, 2008, p. 748]. Low-resistance contacts have been previously demonstrated using molecular beam epitaxy (MBE), which provides active doping above 4×10 19 cm -3 and permits in-situ metal deposition for the lowest resistances [U. Singisetti, M.A. Wistey, J.D. Zimmerman, B.J. Thibeault, M.J.W. Rodwell, A.C. Gossard, S.R. Bank, Appl. Phys. Lett., submitted]. But MBE is a blanket deposition technique, and applying MBE regrowth to deep-submicron lateral device dimensions is difficult even with advanced lithography techniques. We present a simple method for selectively etching undesired regrowth from the gate or mesa of a III-V MOSFET or laser, resulting in self-aligned source/drain contacts regardless of the device dimensions. This turns MBE into an effectively selective area growth technique.

Two dimensional analytical model for a reconfigurable field effect transistor

NASA Astrophysics Data System (ADS)

Ranjith, R.; Jayachandran, Remya; Suja, K. J.; Komaragiri, Rama S.

2018-02-01

This paper presents two-dimensional potential and current models for a reconfigurable field effect transistor (RFET). Two potential models which describe subthreshold and above-threshold channel potentials are developed by solving two-dimensional (2D) Poisson's equation. In the first potential model, 2D Poisson's equation is solved by considering constant/zero charge density in the channel region of the device to get the subthreshold potential characteristics. In the second model, accumulation charge density is considered to get above-threshold potential characteristics of the device. The proposed models are applicable for the device having lightly doped or intrinsic channel. While obtaining the mathematical model, whole body area is divided into two regions: gated region and un-gated region. The analytical models are compared with technology computer-aided design (TCAD) simulation results and are in complete agreement for different lengths of the gated regions as well as at various supply voltage levels.

Analysis of source/drain engineered 22nm FDSOI using high-k spacers

NASA Astrophysics Data System (ADS)

Malviya, Abhishek Kumar; Chauhan, R. K.

2018-04-01

While looking at the current classical scaling of devices there are lots of short channel effects come into consideration. In this paper, a novel device structure is proposed that is an improved structure of Modified Source(MS) FDSOI in terms of better electrical performance, on current and reduced off state leakage current with a higher Ion/Ioff ratio that helps in fast switching of low power nano electronic devices. Proposed structure has Modified drain and source regions with two different type to doping profile at 22nm gate length. In the upper part of engineered region (MD and MS) the doping concentration is kept high and less in the lower region. The purpose was to achieve low parasitic capacitance in source and drain region by reducing doping concentration [1].

Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

DTIC Science & Technology

2016-09-27

contact regions and epitaxial capping layer are fabricated to investigate the advantages of both approaches. Devices were fabricated with various... Contacts 7 2.5 Packaging 11 3. Conclusions 12 4. References 13 Appendix. Detailed Fabrication Process 15 List of Symbols, Abbreviations, and...regions in violet (overlaying previous patterns) .......7 Fig. 6 Mask 4: intrinsic device contact window regions in orange (overlaying previous

Exploration of the Townsend regime by discharge light emission in a gas discharge device

NASA Astrophysics Data System (ADS)

Hilal Yucel, Kurt

2014-01-01

The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device (MGDD) with different applied voltages U and interelectrode distance d under various pressures in air. The anode and the cathode of the MGDD are formed by a transparent SnO2 covered glass and a GaAs semiconductor, respectively. In the experiments, the discharge is found to be unstable just below the breakdown voltage Ub, whereas the discharge passes through a homogeneous stable Townsend mode beyond the breakdown voltage. The measurements are made by an electrical circuit and a CCD camera by recording the currents and light emission (LE) intensities. The intensity profiles, which are converted from the 3D light emission images along the semiconductor diameter, have been analysed for different system parameters. Different instantaneous conductivity σt regimes are found below and beyond the Townsend region. These regimes govern the current and spatio-temporal LE stabilities in the plasma system. It has been proven that the stable LE region increases up to 550 Torr as a function of pressure for small d. If the active area of the semiconductor becomes larger and the interlectrode distance d becomes smaller, the stable LE region stays nearly constant with pressure.

Cascaded thermoacoustic devices

DOEpatents

Swift, Gregory W.; Backhaus, Scott N.; Gardner, David L.

2003-12-09

A thermoacoustic device is formed with a resonator system defining at least one region of high specific acoustic impedance in an acoustic wave within the resonator system. A plurality of thermoacoustic units are cascaded together within the region of high specific acoustic impedance, where at least one of the thermoacoustic units is a regenerator unit.

High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiGe Devices

NASA Technical Reports Server (NTRS)

Choi, Sang Hyouk (Inventor); Park, Yeonjoon (Inventor); King, Glen C. (Inventor); Kim, Hyun-Jung (Inventor); Lee, Kunik (Inventor)

2017-01-01

An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.

Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

NASA Astrophysics Data System (ADS)

Li, Hui; Jia, Xiaowei

2018-05-01

The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

Wide range radioactive gas concentration detector

DOEpatents

Anderson, David F.

1984-01-01

A wide range radioactive gas concentration detector and monitor which is capable of measuring radioactive gas concentrations over a range of eight orders of magnitude. The device of the present invention is designed to have an ionization chamber which is sufficiently small to give a fast response time for measuring radioactive gases but sufficiently large to provide accurate readings at low concentration levels. Closely spaced parallel plate grids provide a uniform electric field in the active region to improve the accuracy of measurements and reduce ion migration time so as to virtually eliminate errors due to ion recombination. The parallel plate grids are fabricated with a minimal surface area to reduce the effects of contamination resulting from absorption of contaminating materials on the surface of the grids. Additionally, the ionization chamber wall is spaced a sufficient distance from the active region of the ionization chamber to minimize contamination effects.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bozkurt, A.; Yorulmaz, N.; Kam, E.

This study aims to assess the environmental radioactivity levels of Harran Plain located within the boundaries of the south-eastern province of Sanliurfa, Turkey. In addition to being at the center of Turkey's major irrigation and development project (South Eastern Anatolian Project, GAP), this 1500 km2 region is famous for its historic attractions. The outdoor gamma dose rates were measured at selected points of the study area using a plastic scintillator. The activity concentrations in the soil samples collected from the study area were determined by gamma spectrometry for the natural radionuclides 238U, 232Th and 40K and the fission product 137Cs.more » The gross alpha and beta activities in the water samples collected from the region was measured using a low-level gamma spectrometry device. A comparison of the measurement results obtained in this study with those of national and world averages are presented in graphical and tabular forms.« less

Microencapsulation and Electrostatic Processing Device

NASA Technical Reports Server (NTRS)

Morrison, Dennis R. (Inventor); Mosier, Benjamin (Inventor); Cassanto, John M. (Inventor)

2001-01-01

A microencapsulation and electrostatic processing (MEP) device is provided for forming microcapsules. In one embodiment, the device comprises a chamber having a filter which separates a first region in the chamber from a second region in the chamber. An aqueous solution is introduced into the first region through an inlet port, and a hydrocarbon/ polymer solution is introduced into the second region through another inlet port. The filter acts to stabilize the interface and suppress mixing between the two immiscible solutions as they are being introduced into their respective regions. After the solutions have been introduced and have become quiescent, the interface is gently separated from the filter. At this point, spontaneous formation of microcapsules at the interface may begin to occur, or some fluid motion may be provided to induce microcapsule formation. In any case, the fluid shear force at the interface is limited to less than 100 dynes/sq cm. This low-shear approach to microcapsule formation yields microcapsules with good sphericity and desirable size distribution. The MEP device is also capable of downstream processing of microcapsules, including rinsing, re-suspension in tertiary fluids, electrostatic deposition of ancillary coatings, and free-fluid electrophoretic separation of charged microcapsules.

Joint Services Electronics Program. Basic Research in Electronics (JSEP)

DTIC Science & Technology

1992-08-01

DBRs). Our DBR work allows us to develop improved vertical cavity surface-emitting lasers ( VCSELs ) and also to examine details of optical phenomena... in short-cavity lasers. We have used MBE regrowth techniques to provide current tunnelling into the device active region of the VCSEL . We use an AlAs... optical detector structures. We have already developed significant capability in the low temperature (2506C - 3000C) growth of undoped GaAs and AIo.3Gao

The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers

NASA Astrophysics Data System (ADS)

Maximov, M. V.; Shernyakov, Yu M.; Zubov, F. I.; Zhukov, A. E.; Gordeev, N. Yu; Korenev, V. V.; Savelyev, A. V.; Livshits, D. A.

2013-10-01

Two-state lasing in devices based on undoped and p-type modulation-doped InAs/InGaAs quantum dots is studied for various cavity lengths and temperatures. Modulation doping of the active region strongly enhances the threshold current of two-state lasing, preserves ground-state lasing up to higher temperatures and increases ground-state output power. The impact of modulation doping is especially strong in short cavities.

Thomas Alva Edison—battery and device innovation in response to application's needs

NASA Astrophysics Data System (ADS)

Salkind, Alvin J.; Israel, Paul

Thomas Alva Edison, the most prolific inventor in North America, with over 1000 patents, was the descendant of early settlers from the Netherlands to the Hudson Valley region of New York/New Jersey. However, his genealogical trail encompasses many cities, provinces, states, and countries, including Holland, France, Scotland, New Amsterdam, New York, New Jersey, Nova Scotia, Ontario, Ohio, and Michigan. He was motivated to develop and invent in response to perceived needs of commercial devices and was the creator of the concept of an industrial research laboratory. His activities covered a wide-range of chemical, electrical, medical, metallurgical, entertainment, and communication devices and led to the creation of major worldwide industries. However, his expressed underlying concern was the "service it might give others". This presentation reviews commercial developments in comparison with the technologies and motivations of the time and is illustrated by material from the Rutgers University 'Edison Papers Project', Edison's personal notes found in the Edison Battery Factory and preserved by Professor Salkind, and records of The Electrochemical Society.

Tunable dual-band graphene-based infrared reflectance filter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldflam, Michael D.; Ruiz, Isaac; Howell, Stephen W.

Here, we experimentally demonstrated an actively tunable optical filter that controls the amplitude of reflected long-wave-infrared light in two separate spectral regions concurrently. Our device exploits the dependence of the excitation energy of plasmons in a continuous and unpatterned sheet of graphene on the Fermi-level, which can be controlled via conventional electrostatic gating. The filter enables simultaneous modification of two distinct spectral bands whose positions are dictated by the device geometry and graphene plasmon dispersion. Within these bands, the reflected amplitude can be varied by over 15% and resonance positions can be shifted by over 90 cm –1. Electromagnetic simulationsmore » verify that tuning arises through coupling of incident light to graphene plasmons by a grating structure. Importantly, the tunable range is determined by a combination of graphene properties, device structure, and the surrounding dielectrics, which dictate the plasmon dispersion. Thus, the underlying design shown here is applicable across a broad range of infrared frequencies.« less

Tunable dual-band graphene-based infrared reflectance filter

DOE PAGES

Goldflam, Michael D.; Ruiz, Isaac; Howell, Stephen W.; ...

2018-03-23

Here, we experimentally demonstrated an actively tunable optical filter that controls the amplitude of reflected long-wave-infrared light in two separate spectral regions concurrently. Our device exploits the dependence of the excitation energy of plasmons in a continuous and unpatterned sheet of graphene on the Fermi-level, which can be controlled via conventional electrostatic gating. The filter enables simultaneous modification of two distinct spectral bands whose positions are dictated by the device geometry and graphene plasmon dispersion. Within these bands, the reflected amplitude can be varied by over 15% and resonance positions can be shifted by over 90 cm –1. Electromagnetic simulationsmore » verify that tuning arises through coupling of incident light to graphene plasmons by a grating structure. Importantly, the tunable range is determined by a combination of graphene properties, device structure, and the surrounding dielectrics, which dictate the plasmon dispersion. Thus, the underlying design shown here is applicable across a broad range of infrared frequencies.« less

Muscle activity of leg muscles during unipedal stance on therapy devices with different stability properties.

PubMed

Wolburg, Thomas; Rapp, Walter; Rieger, Jochen; Horstmann, Thomas

2016-01-01

To test the hypotheses that less stable therapy devices require greater muscle activity and that lower leg muscles will have greater increases in muscle activity with less stable therapy devices than upper leg muscles. Cross-sectional laboratory study. Laboratory setting. Twenty-five healthy subjects. Electromyographic activity of four lower (gastrocnemius medialis, soleus, tibialis anterior, peroneus longus) and four upper leg muscles (vastus medialis and lateralis, biceps femoris, semitendinosus) during unipedal quiet barefoot stance on the dominant leg on a flat rigid surface and on five therapy devices with varying stability properties. Muscle activity during unipedal stance differed significantly between therapy devices (P < 0.001). The order from lowest to highest relative muscle activity matched the order from most to least stable therapy device. There was no significant interaction between muscle location (lower versus upper leg) and therapy device (P = 0.985). Magnitudes of additional relative muscle activity for the respective therapy devices differed substantially among lower extremity muscles. The therapy devices offer a progressive increase in training intensity, and thus may be useful for incremental training programs in physiotherapeutic practice and sports training programs. Copyright © 2015 Elsevier Ltd. All rights reserved.

A microfluidic platform for controlled biochemical stimulation of twin neuronal networks.

PubMed

Biffi, Emilia; Piraino, Francesco; Pedrocchi, Alessandra; Fiore, Gianfranco B; Ferrigno, Giancarlo; Redaelli, Alberto; Menegon, Andrea; Rasponi, Marco

2012-06-01

Spatially and temporally resolved delivery of soluble factors is a key feature for pharmacological applications. In this framework, microfluidics coupled to multisite electrophysiology offers great advantages in neuropharmacology and toxicology. In this work, a microfluidic device for biochemical stimulation of neuronal networks was developed. A micro-chamber for cell culturing, previously developed and tested for long term neuronal growth by our group, was provided with a thin wall, which partially divided the cell culture region in two sub-compartments. The device was reversibly coupled to a flat micro electrode array and used to culture primary neurons in the same microenvironment. We demonstrated that the two fluidically connected compartments were able to originate two parallel neuronal networks with similar electrophysiological activity but functionally independent. Furthermore, the device allowed to connect the outlet port to a syringe pump and to transform the static culture chamber in a perfused one. At 14 days invitro, sub-networks were independently stimulated with a test molecule, tetrodotoxin, a neurotoxin known to block action potentials, by means of continuous delivery. Electrical activity recordings proved the ability of the device configuration to selectively stimulate each neuronal network individually. The proposed microfluidic approach represents an innovative methodology to perform biological, pharmacological, and electrophysiological experiments on neuronal networks. Indeed, it allows for controlled delivery of substances to cells, and it overcomes the limitations due to standard drug stimulation techniques. Finally, the twin network configuration reduces biological variability, which has important outcomes on pharmacological and drug screening.

Heat dissipation schemes in QCLs monitored by CCD thermoreflectance (Conference Presentation)

NASA Astrophysics Data System (ADS)

Pierscinski, Kamil; Pierścińska, Dorota; Morawiec, Magdalena; Gutowski, Piotr; Karbownik, Piotr; Serebrennikova, Olga; Bugajski, Maciej

2017-02-01

In this paper we present the development of the instrumentation for accurate evaluation of the thermal characteristics of quantum cascade lasers based on CCD thermoreflectance (CCD TR). This method allows rapid thermal characterization of QCLs, as the registration of high-resolution map of the whole device facet lasts only several seconds. The capabilities of the CCD TR are used to study temperature dissipation schemes in different designs of QCLs. We report on the investigation of thermal performance of QCLs developed at the Institute of Electron Technology, with an emphasis on the influence of different material system, processing technology and device designs. We investigate and compare AlInAs/InGaAs/InP QCLs (lattice matched and strain compensated) of different architectures, i.e., double trench and buried heterostructure (BH) in terms of thermal management. Experimental results are in very good agreement with numerical predictions of heat dissipation in various device constructions. Numerical model is based on FEM model solved by commercial software package. The model assumes anisotropic thermal conductivity in the AR layers as well as the temperature dependence of thermal conductivities of all materials in the project. We have observed experimentally improvement of thermal properties of devices based on InP materials, especially for buried heterostructure type. The use of buried heterostructure enhanced the lateral heat dissipation from the active region of QCLs. The BH structure and epilayer-down bonding help dissipate the heat generated from active core of the QCL.

Surface Passivation for Reliable Measurement of Bulk Electronic Properties of Heterojunction Devices.

PubMed

Bissig, Benjamin; Guerra-Nunez, Carlos; Carron, Romain; Nishiwaki, Shiro; La Mattina, Fabio; Pianezzi, Fabian; Losio, Paolo A; Avancini, Enrico; Reinhard, Patrick; Haass, Stefan G; Lingg, Martina; Feurer, Thomas; Utke, Ivo; Buecheler, Stephan; Tiwari, Ayodhya N

2016-10-01

Quantum efficiency measurements of state of the art Cu(In,Ga)Se 2 (CIGS) thin film solar cells reveal current losses in the near infrared spectral region. These losses can be ascribed to inadequate optical absorption or poor collection of photogenerated charge carriers. Insight on the limiting mechanism is crucial for the development of more efficient devices. The electron beam induced current measurement technique applied on device cross-sections promises an experimental access to depth resolved information about the charge carrier collection probability. Here, this technique is used to show that charge carrier collection in CIGS deposited by multistage co-evaporation at low temperature is efficient over the optically active region and collection losses are minor as compared to the optical ones. Implications on the favorable absorber design are discussed. Furthermore, it is observed that the measurement is strongly affected by cross-section surface recombination and an accurate determination of the collection efficiency is not possible. Therefore it is proposed and shown that the use of an Al 2 O 3 layer deposited onto the cleaved cross-section significantly improves the accuracy of the measurement by reducing the surface recombination. A model for the passivation mechanism is presented and the passivation concept is extended to other solar cell technologies such as CdTe and Cu 2 (Zn,Sn)(S,Se) 4 . © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, James D.

1997-01-01

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, J.D.

1997-09-02

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

Electrochemical Impedance Analysis of a PEDOT:PSS-Based Textile Energy Storage Device

PubMed Central

Gokceoren, Argun Talat; Odhiambo, Sheilla Atieno; De Mey, Gilbert; Hertleer, Carla; Van Langenhove, Lieva

2017-01-01

A textile-based energy storage device with electroactive PEDOT:PSS (poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate)) polymer functioning as a solid-state polyelectrolyte has been developed. The device was fabricated on textile fabric with two plies of stainless-steel electroconductive yarn as the electrodes. In this study, cyclic voltammetry and electrochemical impedance analysis were used to investigate ionic and electronic activities in the bulk of PEDOT:PSS and at its interfaces with stainless steel yarn electrodes. The complex behavior of ionic and electronic origins was observed in the interfacial region between the conductive polymer and the electrodes. The migration and diffusion of the ions involved were confirmed by the presence of the Warburg element with a phase shift of 45° (n = 0.5). Two different equivalent circuit models were found by simulating the model with the experimental results: (QR)(QR)(QR) for uncharged and (QR)(QR)(Q(RW)) for charged samples. The analyses also showed that the further the distance between electrodes, the lower the capacitance of the cell. The distribution of polymer on the cell surface also played important role to change the capacitance of the device. The results of this work may lead to a better understanding of the mechanism and how to improve the performance of the device. PMID:29283427

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Resonant optical device with a microheater

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lentine, Anthony L.; DeRose, Christopher

2017-04-04

A resonant photonic device is provided. The device comprises an optical waveguiding element, such as an optical resonator, that includes a diode junction region, two signal terminals configured to apply a bias voltage across the junction region, and a heater laterally separated from the optical waveguiding element. A semiconductor electrical barrier element is juxtaposed to the heater. A metallic strip is electrically and thermally connected at one end to a signal terminal of the optical waveguiding element and thermally connected at another end to the barrier element.

Photosensitive space charge limited current in screen printed CdTe thin films

NASA Astrophysics Data System (ADS)

Vyas, C. U.; Pataniya, Pratik; Zankat, Chetan K.; Patel, Alkesh B.; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

2018-05-01

Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.

Ternary Solar Cells Based on Two Small Molecule Donors with Same Conjugated Backbone: The Role of Good Miscibility and Hole Relay Process.

PubMed

Xiao, Liangang; Liang, Tianxiang; Gao, Ke; Lai, Tianqi; Chen, Xuebin; Liu, Feng; Russell, Thomas P; Huang, Fei; Peng, Xiaobin; Cao, Yong

2017-09-06

Ternary organic solar cells (OSCs) are very attractive for further enhancing the power conversion efficiencies (PCEs) of binary ones but still with a single active layer. However, improving the PCEs is still challenging because a ternary cell with one more component is more complicated on phase separation behavior. If the two donors or two acceptors have similar chemical structures, good miscibility can be expected to reduce the try-and-error work. Herein, we report ternary devices based on two small molecule donors with the same backbone but different substituents. Whereas both binary devices show PCEs about 9%, the PCE of the ternary cells is enhanced to 10.17% with improved fill factor and short-circuit current values and external quantum efficiencies almost in the whole absorption wavelength region from 440 to 850 nm. The same backbone enables the donors miscible at molecular level, and the donor with a higher HOMO level plays hole relay process to facilitate the charge transportation in the ternary devices. Since side-chain engineering has been well performed to tune the active materials' energy levels in OSCs, our results suggest that their ternary systems are promising for further improving the binary cells' performance although their absorptions are not complementary.

Reduction of leakage current at the gate edge of SDB SOI NMOS transistor

NASA Astrophysics Data System (ADS)

Kang, Sung-Weon; Lyu, Jong-Son; Kang, Jin-Young; Kang, Sang-Won; Lee, Jin-Hyo

1995-06-01

Leakage current through the parasitic channel formed at the sidewall of the SOI active region has been investigated by measuring the subthreshold I-V characteristics. Partially depleted (PD, approximately 2500 Angstrom) and fully depleted (FD, approximately 800 Angstrom) SOI NMOS transistors of enhancement mode have been fabricated using the silicon direct bonding (SDB) technology. Isolation processes for the SOI devices were LOCOS, LOCOS with channel stop ion implantation or fully recessed trench (FRT). The electron concentration of the parasitic channel is calculated by the PISCES Ilb simulation. As a result, leakage current of the FD mode SOI device with FRT isolation at the front and back gate biases of 0 V was reduced to approximately pA and no hump was seen on the drain current curve.

Photovoltaic device

DOEpatents

Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

2015-06-02

The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

Photovoltaic device

DOEpatents

Reese, Jason A; Keenihan, James R; Gaston, Ryan S; Kauffmann, Keith L; Langmaid, Joseph A; Lopez, Leonardo; Maak, Kevin D; Mills, Michael E; Ramesh, Narayan; Teli, Samar R

2017-03-21

The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

21 CFR 868.5140 - Anesthesia conduction kit.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Anesthesia conduction kit. 868.5140 Section 868...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5140 Anesthesia conduction kit. (a) Identification. An anesthesia conduction kit is a device used to administer to a patient conduction, regional, or...

21 CFR 868.5140 - Anesthesia conduction kit.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Anesthesia conduction kit. 868.5140 Section 868...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5140 Anesthesia conduction kit. (a) Identification. An anesthesia conduction kit is a device used to administer to a patient conduction, regional, or...

21 CFR 868.5140 - Anesthesia conduction kit.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Anesthesia conduction kit. 868.5140 Section 868...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5140 Anesthesia conduction kit. (a) Identification. An anesthesia conduction kit is a device used to administer to a patient conduction, regional, or...

Investigating and Optimizing Carrier Transport, Carrier Distribution, and Efficiency Droop in GaN-based Light-emitting Diodes

NASA Astrophysics Data System (ADS)

Zhu, Di

2011-12-01

The recent tremendous boost in the number and diversity of applications for light-emitting diodes (LEDs) indicates the emergence of the next-generation lighting and illumination technology. The rapidly improving LED technology is becoming increasingly viable especially for high-power applications. However, the greatest roadblock before finally breaching the main defensive position of conventional fluorescent and incandescent lamps still remains: GaN-based LEDs encounter a significant decrease in efficiency as the drive current increases, and this phenomenon is known as the efficiency droop. This dissertation focuses on uncovering the physical cause of efficiency droop in GaN-based LEDs and looks for solutions to it. GaN-based multiple-quantum-well (MQW) LEDs usually have abnormally high diode-ideality factors. Investigating the origin of the high diode-ideality factors could help to better understand the carrier transport in the LED MQW active region. We investigate the ideality factors of GaInN LEDs with different numbers of doped quantum barriers (QBs). Consistent with the theory, a decrease of the ideality factor as well as a reduction in forward voltage is found with increasing number of doped QBs. Experimental and simulation results indicate that the band profiles of QBs in the active region have a significant impact on the carrier transport mechanism, and the unipolar heterojunctions inside the active region play an important role in determining the diode-ideality factor. This dissertation will discuss several mechanisms leading to electron leakage which could be responsible for the efficiency droop. We show that the inefficient electron capture, the electron-attracting properties of polarized EBL, the inherent asymmetry in electron and hole transport and the inefficient EBL p-doping at high Al contents severely limit the ability to confine electrons to the MQWs. We demonstrate GaInN LEDs employing tailored Si doping in the QBs with strongly enhanced high-current efficiency and reduced efficiency droop. Compared with 4-QB-doped LEDs, 1-QB-doped LEDs show a 37.5% increase in light-output power at high currents. Consistent with the measurements, simulation shows a shift of radiative recombination among the MQWs and a reduced electron leakage current into the p-type GaN when fewer QBs are doped. The results can be attributed to a more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop. In this dissertation, artificial evolution is introduced to the LED optimization process which combines a genetic algorithm (GA) and device-simulation software. We show that this approach is capable of generating novel concepts in designing and optimizing LED devices. Application of the GA to the QB-doping in the MQWs yields optimized structures which is consistent with the tailored QB doping experiments. Application of the GA to the EBL region suggests a novel structure with an inverted sheet charge at the spacer-EBL interface. The resulting repulsion of electrons can significantly reduce electron leakage and enhance the efficiency. Finally, dual-wavelength LEDs, which have two types of quantum wells (QWs) emitting at two different wavelengths, are experimentally characterized and compared with numerical simulations. These dual-wavelength LEDs allow us to determine which QW emits most of the light. An experimental observation and a quantitative analysis of the radiative recombination shift within the MQW active region are obtained. In addition, an injection-current dependence of the radiative recombination shift is predicted by numerical simulations and indeed observed in dual-wavelength LEDs. This injection-current dependence of the radiative recombination distribution can be explained very well by incorporating quantum-mechanical tunneling of carriers into and through the QBs into to the classical drift-diffusion model. In summary, using the LEDs with tailored QB doping and dual-wavelength LEDs, we investigate the origin of the high diode-ideality factor of LEDs and gain insight on the control of carrier transport, carrier distribution, and radiative recombination in the LED MQW active region. Our results provide solid evidence on the effectiveness of the GA in the LED device optimization process. In addition, the innovative EBL structure optimized by the GA sheds light on further paths for the optimization of LED design. Our results are the starting point of applying artificial evolution to practical semiconductor devices, opening new perspectives for complex semiconductor device optimization and enabling breakthroughs in high-performance LED design.

Optoelectronic Mounting Structure

DOEpatents

Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

2004-10-05

An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

Evaluation of a novel canine activity monitor for at-home physical activity analysis.

PubMed

Yashari, Jonathan M; Duncan, Colleen G; Duerr, Felix M

2015-07-04

Accelerometers are motion-sensing devices that have been used to assess physical activity in dogs. However, the lack of a user-friendly, inexpensive accelerometer has hindered the widespread use of this objective outcome measure in veterinary research. Recently, a smartphone-based, affordable activity monitor (Whistle) has become available for measurement of at-home physical activity in dogs. The aim of this research was to evaluate this novel accelerometer. Eleven large breed, privately owned dogs wore a collar fitted with both the Whistle device and a previously validated accelerometer-based activity monitor (Actical) for a 24-h time period. Owners were asked to have their dogs resume normal daily activities. Total activity time obtained from the Whistle device in minutes was compared to the total activity count from the Actical device. Activity intensity from the Whistle device was calculated manually from screenshots of the activity bars displayed in the smartphone-application and compared to the activity count recorded by the Actical in the same 3-min time period. A total of 3740 time points were compared. There was a strong correlation between activity intensity of both devices for individual time points (Pearson's correlation coefficient 0.81, p < 0.0001). An even stronger correlation was observed between the total activity data between the two devices (Pearson's correlation coefficient 0.925, p < 0.0001). Activity data provided by the Whistle activity monitor may be used as an objective outcome measurement in dogs. The total activity time provided by the Whistle application offers an inexpensive method for obtaining at-home, canine, real-time physical activity data. Limitations of the Whistle device include the limited battery life, the need for manual derivation of activity intensity data and data transfer, and the requirement of Wi-Fi and Bluetooth availability for data transmission.

Essentials for Successful and Widespread LED Lighting Adoption

NASA Astrophysics Data System (ADS)

Khan, Nisa

2011-03-01

Solid-state lighting (SSL), with light-emitting diodes (LEDs) as the light source, is a growing and essential field, particularly in regard to the heightened need for global energy efficiency. In recent years, SSL has experienced remarkable advances in efficiency, light output magnitude and quality. Thus such diverse applications as signage, message centers, displays, and special lighting are now adopting LEDs, taking 2010's market to 9.1 billion - 68% growth from the previous year! While this is promising, future growth in both display and lighting applications will rely upon unveiling deeper understanding and key innovations in LED lighting science and technologies. In this presentation, some LED lighting fundamentals, engineering challenges and novel solutions will be discussed to address reduction in efficiency (a.k.a. droop) at high currents, and to obtain uniform light distribution for overcoming LEDs' directional nature. The droop phenomenon has been a subject of much controversy in the industry and despite several studies and claims, a widely-accepted explanation still lacks because of counter arguments and experiments. Recently several research studies have identified that the droop behavior in nitride-based LEDs beyond certain current density ranges can only be comprehensively explained if the current leaking beyond the LED active region is included. Although such studies have identified a few useful current leakage mechanisms outside the active region, no one has included current leakage, due to non-ideal, 3-D device structures that create undesirable current distribution inside and outside the active region. This talk will address achieving desirable current distributions from optimized 3-D device structures that should reduce current leakage and hence the droop behavior. In addition to novel LED design solutions for droop reduction and uniform light distribution, the talk will address cost and yield concerns as they pertain to core material scarcity. Such solutions are expected to make LED lights more energy efficient, pleasant in appearance, longer-lasting, affordable, and thus suitable for green living.

Acrylic and metal based Y-branch plastic optical fiber splitter with optical NOA63 polymer waveguide taper region

NASA Astrophysics Data System (ADS)

Ehsan, Abang Annuar; Shaari, Sahbudin; Rahman, Mohd Kamil Abd.

2011-01-01

We proposed a simple low-cost acrylic and metal-based Y-branch plastic optical fiber (POF) splitter which utilizes a low cost optical polymer glue NOA63 as the main waveguiding medium at the waveguide taper region. The device is composed of three sections: an input POF waveguide, a middle waveguide taper region and output POF waveguides. A desktop high speed CNC engraver is utilized to produce the mold inserts used for the optical devices. Short POF fibers are inserted into the engraved slots at the input and output ports. UV curable optical polymer glue NOA63 is injected into the waveguide taper region and cured. The assembling is completed when the top plate is positioned to enclose the device structure and connecting screws are secured. Both POF splitters have an average insertion loss of 7.8 dB, coupling ratio of 55: 45 and 57: 43 for the acrylic and metal-based splitters respectively. The devices have excess loss of 4.82 and 4.73 dB for the acrylic and metal-based splitters respectively.

Multichannel optical mapping: investigation of depth information

NASA Astrophysics Data System (ADS)

Sase, Ichiro; Eda, Hideo; Seiyama, Akitoshi; Tanabe, Hiroki C.; Takatsuki, Akira; Yanagida, Toshio

2001-06-01

Near infrared (NIR) light has become a powerful tool for non-invasive imaging of human brain activity. Many systems have been developed to capture the changes in regional brain blood flow and hemoglobin oxygenation, which occur in the human cortex in response to neural activity. We have developed a multi-channel reflectance imaging system, which can be used as a `mapping device' and also as a `multi-channel spectrophotometer'. In the present study, we visualized changes in the hemodynamics of the human occipital region in multiple ways. (1) Stimulating left and right primary visual cortex independently by showing sector shaped checkerboards sequentially over the contralateral visual field, resulted in corresponding changes in the hemodynamics observed by `mapping' measurement. (2) Simultaneous measurement of functional-MRI and NIR (changes in total hemoglobin) during visual stimulation showed good spatial and temporal correlation with each other. (3) Placing multiple channels densely over the occipital region demonstrated spatial patterns more precisely, and depth information was also acquired by placing each pair of illumination and detection fibers at various distances. These results indicate that optical method can provide data for 3D analysis of human brain functions.

System and method of operating toroidal magnetic confinement devices

DOEpatents

Chance, M.S.; Jardin, S.C.; Stix, T.H.; Grimm, R.C.; Manickam, J.; Okabayashi, M.

1984-08-30

This invention pertains to methods and arrangements for attaining high beta values in plasma confinement devices. More specifically, this invention pertains to methods for accessing the second stability region of operation in toroidal magnetic confinement devices.

Methods and Devices for Micro-Isolation, Extraction, and/or Analysis of Microscale Components

NASA Technical Reports Server (NTRS)

Wade, Lawrence A. (Inventor); Kartalov, Emil P. (Inventor); Taylor, Clive (Inventor); Shibata, Darryl (Inventor)

2014-01-01

Provided herein are devices and methods for the micro-isolation of biological cellular material. A micro-isolation apparatus described can comprise a photomask that protects regions of interest against DNA-destroying illumination. The micro-isolation apparatus can further comprise photosensitive material defining access wells following illumination and subsequent developing of the photosensitive material. The micro-isolation apparatus can further comprise a chambered microfluidic device comprising channels providing access to wells defined in photosensitive material. The micro-isolation apparatus can comprise a chambered microfluidic device without access wells defined in photosensitive material where valves control the flow of gases or liquids through the channels of the microfluidic device. Also included are methods for selectively isolating cellular material using the apparatuses described herein, as are methods for biochemical analysis of individual regions of interest of cellular material using the devices described herein. Further included are methods of making masking arrays useful for the methods described herein.

Spectral gain measurements of quantum confined emitters, and design and fabrication of intersubband quantum box laser structures

NASA Astrophysics Data System (ADS)

Tsvid, Gene

Semiconductor laser active regions are commonly characterized by photo- and electro-luminescence (PL, EL) and cavity length analysis. However quantitative spectral information is not readily extracted from PL and EL data and comparison of different active region materials can be difficult. More quantifiable spectral information is contained in the optical gain spectra. This work reports on spectral gain studies, using multi-segmented interband devices, of InGaAs quantum well and quantum dot active regions grown by metalorganic chemical vapor deposition (MOCVD). Using the fundamental connection between gain and spontaneous emission spectra, the spontaneous radiative current and spontaneous radiative efficiency is evaluated for these active regions. The spectral gain and spontaneous radiative efficiency measurements of 980 nm emitting InGaAs quantum well (QW) material provides a benchmark comparison to previous results obtained on highly-strained, 1200 nm emitting InGaAs QW material. These studies provide insight into carrier recombination and the role of the current injection efficiency in InGaAs QW lasers. The spectral gain of self-assembled MOCVD grown InGaAs quantum dots (QD) active regions are also investigated, allowing for comparison to InGaAs QW material. The second part of my talk will cover intersubband-transition QW and quantum-box (QB) lasers. Quantum cascade (QC) lasers have emerged as compact and technologically important light sources in the mid-infrared (IR) and far-IR wavelength ranges infringing on the near-IR and terahertz spectral regions respectively. However, the overall power conversion efficiency, so-called wallplug efficiency, of the best QC lasers, emitting around 5 microns, is ˜9% in CW operation and very unlikely to exceed 15%. In order to dramatically improve the wallplug efficiency of mid-IR lasers (i.e., to about 50%), intersubband QB (IQB) lasers have been proposed. The basic idea, the optimal design and the progress towards the fabrication of IQB lasers will be presented.

A Improved and Highly Effective Seabed Surface Sand Sampling Device

NASA Astrophysics Data System (ADS)

Liu, Ying

2017-04-01

In marine geology research, it is necessary to obtain a sufficient quantity of seabed surface samples, while also ensuring that the samples are in their original state. Currently, there are a number of seabed surface sampling devices available, but it is very difficult to obtain sand samples using ordinary seabed surface sampling devices, whereas machine-controlled seabed surface sampling devices are unable to dive into deeper regions of water. To obtain larger quantities of samples in their original states, many researchers have tried to improve seabed surface sampling devices, but these efforts have generally produced ambiguous results. To resolve the aforementioned issue, we have designed an improved and highly effective seabed surface sand sampling device, which incorporates the strengths of a variety of sampling devices; it is capable of diving into deeper water regions to obtain sand samples, and is also suited for use in streams, rivers, lakes and seas with varying levels of flow velocities and depth.

Fabrication of Semi-Transparent Photovoltaic Cell by a Cost-Effective Technique

NASA Astrophysics Data System (ADS)

Nithyayini, K. N.; Ramasesha, Sheela K.

2015-09-01

Semi-transparent inorganic thin film PV cells have been fabricated using n-type (CdS) and p-type (CdTe) semiconductors. Large area devices which can be used as windows and skylights in buildings can be fabricated using cost effective solution processes. The device structure is Glass/TCO/CdTe/CdS/TCO. Chemically stable CdS and CdTe layers are deposited at temperatures 353 K to 373 K (80 °C to 100 °C) under controlled pH. The CdCl2 activation is carried out followed by air annealing. The p-n junction is formed by sintering the device at 673 K to 723 K (400 °C to 450 °C). The characterization of cells is carried out using XRD, SEM, AFM, and UV-Visible spectroscopy. The thickness of the cell is ~600 nm. The band gap values are 2.40 eV for CdS and 1.36 eV for CdTe with transmittance of about 70 pct in the visible region. Under 1.5 AM solar spectrum, V oc, and I sc of the initial device are 3.56e-01 V and 6.20e-04 A, respectively.

Light-weight low-frequency loudspeaker

NASA Astrophysics Data System (ADS)

Corsaro, Robert; Tressler, James

2002-05-01

In an aerospace application, we require a very low-mass sound generator with good performance at low audio frequencies (i.e., 30-400 Hz). A number of device configurations have been explored using various actuation technologies. Two particularly interesting devices have been developed, both using ``Thunder'' transducers (Face Intl. Corp.) as the actuation component. One of these devices has the advantage of high sound output but a complex phase spectrum, while the other has somewhat lower output but a highly uniform phase. The former is particularly novel in that the actuator is coupled to a flat, compliant diaphragm supported on the edges by an inflatable tube. This results in a radiating surface with very high modal complexity. Sound pressure levels measured in the far field (25 cm) using only 200-V peak drive (one-third or its rating) were nominally 74 6 dB over the band from 38 to 330 Hz. The second device essentially operates as a stiff low-mass piston, and is more suitable for our particular application, which is exploring the use of active controlled surface covers for reducing sound levels in payload fairing regions. [Work supported by NRL/ONR Smart Blanket program.

Polymer bulk heterojunction solar cells with PEDOT:PSS bilayer structure as hole extraction layer.

PubMed

Kim, Wanjung; Kim, Namhun; Kim, Jung Kyu; Park, Insun; Choi, Yeong Suk; Wang, Dong Hwan; Chae, Heeyeop; Park, Jong Hyeok

2013-06-01

A high current density obtained in a limited, nanometer-thick region is important for high efficiency polymer solar cells (PSCs). The conversion of incident photons to charge carriers only occurs in confined active layers; therefore, charge-carrier extraction from the active layer within the device by using solar light has an important impact on the current density and the related to power conversion efficiency. In this study, we observed a surprising result, that is, extracting the charge carrier generated in the active layer of a PSC device, with a thickness-controlled PEDOT:PSS bilayer that acted as a hole extraction layer (HEL), yielded a dramatically improved power conversion efficiency in two different model systems (P3HT:PC₆₀BM and PCDTBT:PC₇₀BM). To understand this phenomenon, we conducted optical strength simulation, photocurrent-voltage measurements, incident photon to charge carrier efficiency measurements, ultraviolet photoelectron spectroscopy, and AFM studies. The results revealed that approximately 60 nm was the optimum PEDOT:PSS bilayer HEL thickness in PSCs for producing the maximum power conversion efficiency. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

NASA Astrophysics Data System (ADS)

Gao, Xu; Lin, Meng-Fang; Mao, Bao-Hua; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Nabatame, Toshihide; Liu, Zhi; Tsukagoshi, Kazuhito; Wang, Sui-Dong

2017-01-01

Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O2/air. The device with a thick IGZO layer shows similar electron mobility in O2/air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O2/air due to the electron transfer to adsorbed gas molecules. The O2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results.

Fabrication of Semiordered Nanopatterned Diamond-like Carbon and Titania Films for Blood Contacting Applications.

PubMed

Nandakumar, Deepika; Bendavid, Avi; Martin, Philip J; Harris, Kenneth D; Ruys, Andrew J; Lord, Megan S

2016-03-23

Biomaterials with the ability to interface with, but not activate, blood components are essential for a multitude of medical devices. Diamond-like carbon (DLC) and titania (TiO2) have shown promise for these applications; however, both support platelet adhesion and activation. This study explored the fabrication of nanostructured DLC and TiO2 thin film coatings using a block copolymer deposition technique that produced semiordered nanopatterns with low surface roughness (5-8 nm Rrms). These surfaces supported fibrinogen and plasma protein adsorption that predominantly adsorbed between the nanofeatures and reduced the overall surface roughness. The conformation of the adsorbed fibrinogen was altered on the nanopatterned surfaces as compared with the planar surfaces to reveal higher levels of the platelet binding region. Planar DLC and TiO2 coatings supported less platelet adhesion than nanopatterned DLC and TiO2. However, platelets on the nanopatterned DLC coatings were less spread indicating a lower level of platelet activation on the nanostructured DLC coatings compared with the planar DLC coatings. These data indicated that nanostructured DLC coatings may find application in blood contacting medical devices in the future.

Underwater Sound Levels at a Wave Energy Device Testing Facility in Falmouth Bay, UK.

PubMed

Garrett, Joanne K; Witt, Matthew J; Johanning, Lars

2016-01-01

Passive acoustic monitoring devices were deployed at FaBTest in Falmouth Bay, UK, a marine renewable energy device testing facility during trials of a wave energy device. The area supports considerable commercial shipping and recreational boating along with diverse marine fauna. Noise monitoring occurred during (1) a baseline period, (2) installation activity, (3) the device in situ with inactive power status, and (4) the device in situ with active power status. This paper discusses the preliminary findings of the sound recording at FabTest during these different activity periods of a wave energy device trial.

Cognitive Inference Device for Activity Supervision in the Elderly

PubMed Central

2014-01-01

Human activity, life span, and quality of life are enhanced by innovations in science and technology. Aging individual needs to take advantage of these developments to lead a self-regulated life. However, maintaining a self-regulated life at old age involves a high degree of risk, and the elderly often fail at this goal. Thus, the objective of our study is to investigate the feasibility of implementing a cognitive inference device (CI-device) for effective activity supervision in the elderly. To frame the CI-device, we propose a device design framework along with an inference algorithm and implement the designs through an artificial neural model with different configurations, mapping the CI-device's functions to minimise the device's prediction error. An analysis and discussion are then provided to validate the feasibility of CI-device implementation for activity supervision in the elderly. PMID:25405211

[Design and application of implantable medical device information management system].

PubMed

Cao, Shaoping; Yin, Chunguang; Zhao, Zhenying

2013-03-01

Through the establishment of implantable medical device information management system, with the aid of the regional joint sharing of resources, we further enhance the implantable medical device traceability management level, strengthen quality management, control of medical risk.

Lateral power MOSFETs in silicon carbide

NASA Astrophysics Data System (ADS)

Spitz, Jan

2001-07-01

Because of its large bandgap, its high critical electric field, and its high quality native SiO2, silicon carbide is considered to be the material of choice for power switching electronics in the future. Until 1997 the maximum thickness of commercially available epilayers serving as the drift region for power devices has been limited to 10--15 mum, limiting the maximum blocking voltage to 1500 V for vertical power devices in silicon carbide. In this study, we present the first lateral power devices on a semi-insulating vanadium doped substrate of silicon carbide. The first generation of lateral DMOSFETs in 4H-SiC yielded a blocking voltage of 2.6 kV---more than twice what was previously reported for any SiC MOSFETs---but suffered from low MOS channel mobility caused by the high anneal temperatures (≥1600°C) required to activate the p-type ion-implant. Combining the high blocking-voltage of the vanadium-doped substrate with the higher MOS mobility previously achieved by an epitaxially-grown accumulation channel leads us to the LACCUFET device: No p-type implant is necessary. This device shows a blocking voltage of 2.7 kV unmatched by any SiC transistor until February 2000 combined with a much lower specific on-resistance of 3.6 O•cm2. The ability to combine long-channel test MOSFETs with high channel mobility of 27 cm2/(volt·sec) in 4H-SiC with power devices of 13 cm2/(volt·sec) on the same chip has been demonstrated. The Figure of Merit Vblock 2/Ron,sp for this new NON-RESURF LDMOSFET in 4H-SiC is close to the theoretical limit for vertical power devices made of silicon. The specific on-resistance can be reduced by factor 2.5 by forward-biasing the p-base to source junction by 2 to 3 volts. Basic operation in Static Induction Injection Accumulation FET (SIAFET) mode has been demonstrated. Lateral (Non-Punch-Through) Insulated Gate Bipolar Transistors (LIGBT) have been presented for the first time showing similar on-resistance and blocking voltages but significantly higher on-currents for both 4H and 6H-SiC devices compared to their MOSFET counterparts. Test p-i-n diodes show lower on-resistance by carrier injection into the drift region.

Improved organic thin-film transistor performance using novel self-assembled monolayers

NASA Astrophysics Data System (ADS)

McDowell, M.; Hill, I. G.; McDermott, J. E.; Bernasek, S. L.; Schwartz, J.

2006-02-01

Pentacene-based organic thin-film transistors have been fabricated using a phosphonate-linked anthracene self-assembled monolayer as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region. Vast improvements in the subthreshold slope and threshold voltage are observed compared to control devices fabricated without the buffer. Both observations are consistent with a greatly reduced density of charge trapping states at the semiconductor-dielectric interface effected by introduction of the self-assembled monolayer.

Lateral electrochemical etching of III-nitride materials for microfabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Jung

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

Photovoltaic device

DOEpatents

Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

2015-09-01

The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

Organic photosensitive devices

DOEpatents

Rand, Barry P; Forrest, Stephen R

2013-11-26

The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

Control method for physical systems and devices

DOEpatents

Guckenheimer, John

1997-01-01

A control method for stabilizing systems or devices that are outside the control domain of a linear controller is provided. When applied to nonlinear systems, the effectiveness of this method depends upon the size of the domain of stability that is produced for the stabilized equilibrium. If this domain is small compared to the accuracy of measurements or the size of disturbances within the system, then the linear controller is likely to fail within a short period. Failure of the system or device can be catastrophic: the system or device can wander far from the desired equilibrium. The method of the invention presents a general procedure to recapture the stability of a linear controller, when the trajectory of a system or device leaves its region of stability. By using a hybrid strategy based upon discrete switching events within the state space of the system or device, the system or device will return from a much larger domain to the region of stability utilized by the linear controller. The control procedure is robust and remains effective under large classes of perturbations of a given underlying system or device.

Real-world geographic variations in the use of cardiac implantable electronic devices - The PANORAMA 2 observational cohort study.

PubMed

Bastian, Dirk; Ebrahim, Iftikhar O; Chen, Ju-Yi; Chen, Mien-Cheng; Huang, Dejia; Huang, Jin-Long; Kuznetsov, Vadim A; Maus, Bärbel; Naik, Ajay M; Verhees, Koen J P; Fagih, Ahmed R Al

2018-06-13

Currently, several geographies around the world remain underrepresented in medical device trials. The PANORAMA 2 study was designed to assess contemporary region-specific differences in clinical practice patterns of patients with cardiac implantable electronic devices (CIEDs). In this prospective, multicenter, observational, multi-national study, baseline and implant data of 4,706 patients receiving Medtronic CIEDs (either de novo device implants, replacements, or upgrades) were analyzed, consisting of: 54% implantable pulse generators (IPGs), 20.3% implantable cardiac defibrillators (ICDs), 15% cardiac resynchronization therapy defibrillators (CRT-Ds), 5.1% cardiac resynchronization therapy pacemakers (CRT-Ps), from 117 hospitals in 23 countries across 4 geographical regions between 2012 and 2016. For all device types, in all regions, there were less females than males enrolled, and women were less likely to have ischemic cardiomyopathy. Implant procedure duration differed significantly across the geographies for all device types. Subjects from emerging countries, women and older patients were less likely to receive a magnetic resonance imaging (MRI)-compatible device. Defibrillation testing differed significantly between the regions. European patients had the highest rates of atrial fibrillation (AF), and the lowest number of implanted single-chamber IPGs. Evaluation of stroke history suggested that the general embolic risk is more strongly associated with stroke than AF. We provide comprehensive descriptive data on patients receiving Medtronic CIEDs from several geographies, some of which are understudied in randomized controlled trials (RCTs). We found significant variations in patient characteristics. Several medical decisions appear to be affected by socioeconomic factors. Long-term follow-up data will help evaluate if these variations require adjustments to outcome expectations. This article is protected by copyright. All rights reserved. This article is protected by copyright. All rights reserved.

Current steering to activate targeted neural pathways during deep brain stimulation of the subthalamic region

PubMed Central

Chaturvedi, Ashutosh; Foutz, Thomas J.; McIntyre, Cameron C.

2012-01-01

Deep brain stimulation (DBS) has steadily evolved into an established surgical therapy for numerous neurological disorders, most notably Parkinson’s disease (PD). Traditional DBS technology relies on voltage-controlled stimulation with a single source; however, recent engineering advances are providing current-controlled devices with multiple independent sources. These new stimulators deliver constant current to the brain tissue, irrespective of impedance changes that occur around the electrode, and enable more specific steering of current towards targeted regions of interest. In this study, we examined the impact of current steering between multiple electrode contacts to directly activate three distinct neural populations in the subthalamic region commonly stimulated for the treatment of PD: projection neurons of the subthalamic nucleus (STN), globus pallidus internus (GPi) fibers of the lenticular fasiculus, and internal capsule (IC) fibers of passage. We used three-dimensional finite element electric field models, along with detailed multi-compartment cable models of the three neural populations to determine their activations using a wide range of stimulation parameter settings. Our results indicate that selective activation of neural populations largely depends on the location of the active electrode(s). Greater activation of the GPi and STN populations (without activating any side-effect related IC fibers) was achieved by current steering with multiple independent sources, compared to a single current source. Despite this potential advantage, it remains to be seen if these theoretical predictions result in a measurable clinical effect that outweighs the added complexity of the expanded stimulation parameter search space generated by the more flexible technology. PMID:22277548

Pneumatic bracing and total contact casting have equivocal effects on plantar pressure relief.

PubMed

Hartsell, H D; Fellner, C; Saltzman, C L

2001-06-01

The purpose was to examine and compare plantar pressures produced in healthy subjects while wearing a running shoe (RS), total contact cast (TCC) and 'customized' pneumatic pre-fabricated walking brace (PWB). A repeated measures design was used to compare the plantar pressures recorded for three footwear types (RS, TCC, PWB) in two body regions (forefoot, heel). Nine healthy subjects walked at a self-selected walking pace on a motorized treadmill while wearing the RS, TCC and PWB (ordered randomization). Following a five-minute acclimatization period on the treadmill with each footwear device, plantar pressures were recorded from 84 constant gait speed and step length steps using the Pedar system of in-shoe array of capacitive sensors embedded in an insert. Mean spatially averaged peak plantar pressures were recorded for the metatarsal heads and heel region for each footwear device worn by each subject. A two-way analysis of variance with repeated measures and post-hoc Tukey tests analysed the data with a significance level of p=.05. The main effects of footwear (p=.005) and body region (p=.000), and interaction effect (body region x footwear device) (p=.000) were significant. Unloading of the forefoot was 63.72% and 58.77% for the TCC and PWB, respectively, whereas loading under the heel was increased 37.09% and 34.11% for the same two devices, respectively. Patients who develop neuropathic plantar ulcers in the forefoot region, but not in the heel region, may benefit from a reduction in plantar pressures by using either the TCC or a 'customized' PWB. An alternative footwear device still needs to be found for those patients with heel ulceration.

Gallium arsenide processing for gate array logic

NASA Technical Reports Server (NTRS)

Cole, Eric D.

1989-01-01

The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

Light emitting device having peripheral emissive region

DOEpatents

Forrest, Stephen R

2013-05-28

Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

Microstructural evaluation of strained multilayer InAsSb/InSb infrared detectors by transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chadda, S.; Datye, A.; Dawson, L.R.

InSb/InAsSb strained layer superlattices (SLS) were grown on (001) InSb substrates by molecular beam epitaxy at 425 [degree]C. The active device consisted of an InAs[sub 0.15]Sb[sub 0.85]/InSb superlattice region embedded within a [ital p]-[ital i]-[ital n] junction. The large lattice mismatch between the active device and the substrate required the growth of a buffer. InAs[sub 0.15]Sb[sub 0.85]/InSb SLS, where the average As content was gradually increased, was used as a buffer. The buffer structure was varied to probe its microstructural effect on the capping device. Three distinct approaches (A, B, and C) were used to grow the buffer. Approach Amore » was a four-step buffer where the average content of As in the superlattice was increased in four equal composition steps. This approach led to a crystal with an extensive network of threading dislocations and microcracks. Approach B was to change the average composition in five equal composition steps, thereby decreasing the misfit at the interfaces between composition steps. This led to a decrease in the threading dislocation density but microscopic cracks were still evident. The last approach (C) was to employ migration enhanced epitaxy (MEE) for the growth of the five-step buffer. Samples grown by employing MEE revealed no microcracks but they contained a high density of unusual wiggly'' dislocations at the buffer/device interface. Detailed microstructural analysis by transmission electron microscopy is presented.« less

Quantum cascade light emitting diodes based on type-2 quantum wells

NASA Technical Reports Server (NTRS)

Lin, C. H.; Yang, R. Q.; Zhang, D.; Murry, S. J.; Pei, S. S.; Allerman, A. A.; Kurtz, S. R.

1997-01-01

The authors have demonstrated room-temperature CW operation of type-2 quantum cascade (QC) light emitting diodes at 4.2 (micro)m using InAs/InGaSb/InAlSb type-2 quantum wells. The type-2 QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-2 quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (micro)W at 80 K, and 140 (micro)W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Goh, E. S. M.; Yang, H. Y.; Han, Z. J.; Chen, T. P.; Ostrikov, K.

2012-12-01

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.

Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

NASA Astrophysics Data System (ADS)

Xiang, Li; Degang, Zhao; Desheng, Jiang; Ping, Chen; Zongshun, Liu; Jianjun, Zhu; Ming, Shi; Danmei, Zhao; Wei, Liu

2016-01-01

Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes (SCH LDs) has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well (QW), an AlGaAs interlayer with a smaller Al component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the AlGaAs interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency. Project supported by the National Natural Science Foundation of China (Nos. 61377020, 61376089, 61223005, 61176126) and the National Science Fund for Distinguished Young Scholars (No. 60925017).

Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping.

PubMed

Ko, Seungpil; Na, Junhong; Moon, Young-Sun; Zschieschang, Ute; Acharya, Rachana; Klauk, Hagen; Kim, Gyu-Tae; Burghard, Marko; Kern, Klaus

2017-12-13

Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe 2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al 2 O 3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W -1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.

Parametrics for Molecular Deuterium Concentrations in the Source Region of the UW-IEC Device Using an Ion Acoustic Wave Diagnostic

NASA Astrophysics Data System (ADS)

Boris, D. R.; Emmert, G. A.

2007-11-01

The ion source region of the UW-Inertial Electrostatic Confinement device is comprised of a filament assisted DC discharge plasma that exists between the wall of the IEC vacuum chamber and the grounded spherical steel grid that makes up the anode of the IEC device. A 0-dimensional rate equation calculation of the molecular deuterium ion species concentration has been applied utilizing varying primary electron energy, and neutral gas pressure. By propagating ion acoustic waves in the source region of the IEC device the concentrations of molecular deuterium ion species have been determined for these varying plasma conditions, and high D3^+ concentrations have been verified. This was done by utilizing the multi-species ion acoustic wave dispersion relation, which relates the phase speed of the multi-species ion acoustic wave, vph, to the sum in quadrature of the concentration weighted ion acoustic sound speeds of the individual ion species.

The Development of Ultraviolet Light Emitting Diodes on p-SiC Substrates

NASA Astrophysics Data System (ADS)

Brummer, Gordon

Ultraviolet (UV) light emitting diodes (LEDs) are promising light sources for purification, phototherapy, and resin curing applications. Currently, commercial UV LEDs are composed of AlGaN-based n-i-p junctions grown on sapphire substrates. These devices suffer from defects in the active region, inefficient p-type doping, and poor light extraction efficiency. This dissertation addresses the development of a novel UV LED device structure, grown on p-SiC substrates. In this device structure, the AlGaN-based intrinsic (i) and n-layers are grown directly on the p-type substrate, forming a p-i-n junction. The intrinsic layer (active region) is composed of an AlN buffer layer followed by three AlN/Al0.30Ga0.70N quantum wells. After the intrinsic layer, the n-layer is formed from n-type AlGaN. This device architecture addresses the deficiencies of UV LEDs on sapphire substrates while providing a vertical device geometry, reduced fabrication complexity, and improved thermal management. The device layers were grown by molecular beam epitaxy (MBE). The material properties were optimized by considering varying growth conditions and by considering the role of the layer within the device. AlN grown at 825 C and with a Ga surfactant yielded material with screw dislocation density of 1x10 7 cm-2 based on X-ray diffraction (XRD) analysis. AlGaN alloys grown in this work contained compositional inhomogeneity, as verified by high-resolution XRD, photoluminescence, and absorption measurements. Based on Stokes shift measurements, the degree of compositional inhomogeneity was correlated with the amount of excess Ga employed during growth. Compositional inhomogeneity yields carrier localizing potential fluctuations, which are advantages in light emitting device layers. Therefore, excess Ga growth conditions were used to grow AlN/Al0.30Ga0.70N quantum wells (designed using a wurtzite k.p model) with 35% internal quantum efficiency. Potential fluctuations limit the mobility of carriers and introduce sub-bandgap absorption, making them undesirable in the n-AlGaN layers. n-Al0.60Ga 0.40N grown under stoichiometric Ga flux and an In surfactant reduced the Stokes shift (compared to n-AlGaN grown without In) by 150 meV. However, even under these growth modes, some compositional inhomogeneity persisted which is speculatively attributed to the vicinal substrate. Device epitaxial layer stacks utilizing the optimum growth conditions were fabricated into prototype vertical UV LEDs which emit from 295-320 nm. In order to increase light extraction efficiency, UV distributed Bragg reflectors (DBRs) based on compositionally graded AlGaN alloys were designed using the transfer matrix method (TMM) and grown by MBE. DBRs were formed from repeated compositionally graded AlGaN alloys. This structure utilized the polarization doping and index of refraction variation of graded composition AlGaN. DBRs with square wave, sinusoidal, triangular, and sawtooth compositional profiles were realized, with reflectivity peaks over 50%, centered at 280 nm.

Re-active Passive (RAP) Devices for Control of Noise Transmission through a Panel

NASA Technical Reports Server (NTRS)

Carneal, James P.; Giovanardi, Marco; Fuller, Chris R.; Palumbo, Daniel L.

2008-01-01

Re-Active Passive (RAP) devices have been developed to control low frequency (<1000 Hz) noise transmission through a panel. These devices use a combination of active, re-active, and passive technologies packaged into a single unit to control a broad frequency range utilizing the strength of each technology over its best suited frequency range. The RAP device uses passive constrained layer damping to cover the relatively high frequency range (>200 Hz), reactive distributed vibration absorber) to cover the medium frequency range (75 to 250 Hz), and active control for controlling low frequencies (<200 Hz). The device was applied to control noise transmission through a panel mounted in a transmission loss test facility. Experimental results are presented for the bare panel, and combinations of passive treatment, reactive treatment, and active control. Results indicate that three RAP devices were able to increase the overall broadband (15-1000 Hz) transmission loss by 9.4 dB. These three devices added a total of 285 grams to the panel mass of 6.0 kg, or approximately 5%, not including control electronics.

Re-Active Passive devices for control of noise transmission through a panel

NASA Astrophysics Data System (ADS)

Carneal, James P.; Giovanardi, Marco; Fuller, Chris R.; Palumbo, Dan

2008-01-01

Re-Active Passive devices have been developed to control low-frequency (<1000 Hz) noise transmission through a panel. These devices use a combination of active, re-active, and passive technologies packaged into a single unit to control a broad frequency range utilizing the strength of each technology over its best suited frequency range. The Re-Active Passive device uses passive constrained layer damping to cover relatively high-frequency range (>150 Hz), reactive distributed vibration absorber to cover the medium-frequency range (50-200 Hz), and active control for controlling low frequencies (<150 Hz). The actuator was applied to control noise transmission through a panel mounted in the Transmission Loss Test Facility at Virginia Tech. Experimental results are presented for the bare panel, and combinations of passive treatment, reactive treatment, and active control. Results indicate that three Re-Active Passive devices were able to increase the overall broadband (15-1000 Hz) transmission loss by 9.4 dB. These three devices added a total of 285 g to the panel mass of 6.0 kg, or approximately 5%, not including control electronics.

Formation of Supported Graphene Oxide: Evidence for Enolate Species.

PubMed

Novotny, Zbynek; Nguyen, Manh-Thuong; Netzer, Falko P; Glezakou, Vassiliki-Alexandra; Rousseau, Roger; Dohnálek, Zdenek

2018-04-18

Graphene oxides are promising materials for novel electronic devices or anchoring of the active sites for catalytic applications. Here we focus on understanding the atomic oxygen (AO) binding and mobility on different regions of graphene (Gr) on Ru(0001). Differences in the Gr/Ru lattices result in the superstructure, which offers an array of distinct adsorption sites. We employ scanning tunneling microscopy and density functional theory to map out the chemical identity and stability of prepared AO functionalities in different Gr regions. The AO diffusion is utilized to establish that in the regions that are close to the metal substrate the terminally bonded enolate groups are strongly preferred over bridge-bonded epoxy groups. No oxygen species are observed on the graphene regions that are far from the underlying Ru, indicating their low relative stability. This study provides a clear fundamental basis for understanding the local structural, electronic factors and C-Ru bond strengthening/weakening processes that affect the stability of enolate and epoxy species.

Formation of Supported Graphene Oxide: Evidence for Enolate Species

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novotny, Zbynek; Nguyen, Manh-Thuong; Netzer, Falko P.

Graphene oxides are promising materials for novel electronic devices or anchoring of the active sites for catalytic applications. Here we focus on understanding the oxygen binding on different regions of graphene (Gr) on Ru(0001). Differences in the Gr/Ru lattices result in the superstructure, which offers an array of distinct adsorption sites. We employ scanning tunneling microscopy and density functional theory to map out the chemical identity and stability of prepared oxygen functionalities in different Gr regions. We demonstrate that in the regions that are close to the metal substrate, the terminally-bonded enolate groups are strongly preferred over bridge-bonded epoxy configurations.more » No oxygen species are observed on the graphene regions that are far from the underlying Ru, indicating their low relative stability. This study provides a clear fundamental basis for understanding the structural and electronic factors that affect the stability of enolate and epoxy species as a function of Gr/Ru interactions.« less

Effect of solvent and subsequent thermal annealing on the performance of phenylenevinylene copolymer: PCBM solar cells.

PubMed

Sharma, G D; Suresh, P; Sharma, S S; Vijay, Y K; Mikroyannidis, John A

2010-02-01

The morphology of the photoactive layer used in the bulk heterojunction photovoltaic devices is crucial for efficient charge generation and their collection at the electrodes. We investigated the solvent vapor annealing and thermal annealing effect of an alternating phenylenevinylene copolymer P:PCBM blend on its morphology and optical properties. The UV-visible absorption spectroscopy shows that both solvent and thermal annealing can result in self-assembling of copolymer P to form an ordered structure, leading to enhanced absorption in the red region and hole transport enhancement. By combining the solvent and thermal annealing of the devices, the power conversion efficiency is improved. This feature was attributed to the fact that the PCBM molecules begin to diffuse into aggregates and together with the ordered copolymer P phase form bicontinuous pathways in the entire layer for efficient charge separation and transport. Furthermore, the measured photocurrent also suggests that the space charges no longer limit the values of the short circuit current (J(sc)) and fill factor (FF) for solvent-treated and thermally annealed devices. These results indicate that the higher J(sc) and PCE for the solvent-treated and thermally annealed devices can be attributed to the phase separation of active layers, which leads to a balanced carrier mobility. The overall PCE of the device based on the combination of solvent annealing and thermal annealing is about 3.7 %.

Le Fort I distraction using internal devices for maxillary hypoplasia in patients with cleft lip, palate, and alveolus: complications and their prevention and management.

PubMed

Mitsukawa, Nobuyuki; Satoh, Kaneshige; Morishita, Tadashi

2010-09-01

In recent years, advancement has been made in distraction osteogenesis in the facial area. It has been applied actively to treat maxillary hypoplasia in patients with cleft lip, palate, and alveolus. Le Fort I distraction using internal devices does not lead to disability in daily living, including during the retention period, and has low surgical invasiveness, facile management, and superior aesthetics. Thus, there have been occasional reports on this procedure in recent years. Because an internal device is unidirectional, the greatest disadvantage is the inability to adjust the direction of distraction after its placement. However, past reports have emphasized its advantages, and its complications have rarely been discussed. We performed Le Fort I distraction using internal devices on 15 young patients. Our results showed notable complications in a few cases. When serial cephalometric analysis was performed after maxillary distraction, it demonstrated that the maxilla assumes various three-dimensional distraction morphologies. In particular, cases with insufficient bone grafting of alveolar clefts developed collapse mainly in the alveolar cleft region during postoperative distraction. Mobility and deviation of the maxillary bone fragment occurred. We implemented preventative measures against complications such as using modifications to place the devices parallel on the left and right sides and using a bite splint for distraction. These measures produced improved outcomes, and we describe here the details.

A nonimaging scintillation probe to measure penile hemodynamics.

PubMed

Zuckier, L S; Korupolu, G R; Gladshteyn, M; Sattenberg, R; Goldstein, R; Ricciardi, R; Goodwin, P; Melman, A; Blaufox, M D

1995-12-01

We have developed a penile nonimaging scintillation (PNIS) probe consisting of a plastic well-type scintillation crystal interfaced to a portable computer and acquisition board. This report describes the design of the PNIS probe, performance characteristics, mode of usage and illustrative results which demonstrate its capabilities. With the PNIS probe, penile blood-pool studies were performed in nine patients utilizing 3.7 MBq (100 microCi) autologous 99mTc-labeled red blood cells (RBCs). Venous blood standards were assayed to enable conversion of the count rate to volummetric measurements. Washin of peripherally administered 99mTc-RBCs was mathematically analyzed to estimate penile blood volume and cavernosal flow rate in the flaccid state. The rate of change of penile blood volume after intracavernosal vasodilators was used to generate measures of stimulated flow. A major advantage of this device over the gamma-camera is a 3300-fold increase in count rate sensitivity, which allows for markedly improved temporal resolution while significantly reducing the radiopharmaceutical dosage. Additionally, the PNIS probe is portable, economical and is not dependent on operator-defined regions of interest. Count rate sensitivity is relatively constant within the bore, with the exception of the proximal region adjacent to the opening, where geometric efficiency is reduced. The PNIS probe is an effective device for measuring penile activity in radionuclide studies, allowing for acquisition of time-activity curves of the penis during flaccid washin of peripherally labeled red blood cells and after pharmacologic stimulation to induce erection.

Territorial characteristics of low frequency electrostatic fluctuations in a simple magnetized torus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaur, R.; Singh, R.; Sarada Sree, A.

2011-01-15

This paper presents an experimental investigation of turbulence in simple toroidal plasma devices without rotational transform. It is argued that Rayleigh-Taylor (flute interchange) mode may be one of the source mechanisms for the observed turbulence but is not sufficient to explain its observed global characteristics. Taking BETA device as an example, we show that pure Rayleigh-Taylor mode cannot explain (i) the observation of mode maximum at the location other than where density scale length is minimum, (ii) the comparable value of amplitude level of fluctuations in good curvature region, and (iii) the decrease in the mode amplitude with increasing magneticmore » field. Investigations have revealed that there exists not only poloidal plasma flow but also that it is sheared. Including this effect explains the first observation. However, modification brought about by velocity shear in the Rayleigh-Taylor mode still does not explain our second and third observations. We have taken an approach that since Rayleigh-Taylor is not excited in a good curvature region, it cannot be the source of turbulence there. Nor is it defensible to say that turbulence born in a bad curvature region is carried over through ExB rotation to the good curvature region. Consequently, we have invoked cross-field Simon-Hoh instability for this region. Experimental evidence supporting our proposal is presented. This paper concludes that toroidal devices have simultaneous existence of different self-consistent sources of turbulence in different regions of the device.« less

A Feasibility Study of Wearable Activity Monitors for Pre-Adolescent School-Age Children

PubMed Central

Van Loan, Marta; German, J. Bruce

2014-01-01

Introduction Understanding physical activity is key in the fight against childhood obesity. The objective of this study was to examine the feasibility of using certain wearable devices to measure physical activity among children. Methods A qualitative study was conducted with 25 children aged 7 to 10 years to assess acceptability and compliance of wearable activity devices in this age group. During March through August 2012, children participated in a 4-week study of 3 accelerometer models and a heart rate monitor. Children were asked to use a different device each week for 7 consecutive days. Children and their parents completed structured interviews after using each device; they also completed a final exit interview. Results The wrist-worn Polar Active was the device most preferred by children and was associated with the highest level of compliance. Devices that are comfortable to wear, fit properly, have engaging features, and are waterproof increase feasibility and are associated with higher levels of compliance. Conclusion The wrist-worn device was the most feasible for measuring physical activity among children aged 7 to 10 years. These findings will inform researchers in selecting tools for measuring children’s physical activity. PMID:24854236

Spectral tailoring device

DOEpatents

Brager, H.R.; Schenter, R.E.; Carter, L.L.; Karnesky, R.A.

1987-08-05

A spectral tailoring device for altering the neutron energy spectra and flux of neutrons in a fast reactor thereby selectively to enhance or inhibit the transmutation rate of a target metrical to form a product isotope. Neutron moderators, neutron filters, neutron absorbers and neutron reflectors may be used as spectral tailoring devices. Depending on the intended use for the device, a member from each of these four classes of materials could be used singularly, or in combination, to provide a preferred neutron energy spectra and flux of the neutrons in the region of the target material. In one embodiment of the invention, an assembly is provided for enhancing the production of isotopes, such as cobalt 60 and gadolinium 153. In another embodiment of the invention, a spectral tailoring device is disposed adjacent a target material which comprises long lived or volatile fission products and the device is used to shift the neutron energy spectra and flux of neutrons in the region of the fission products to preferentially transmute them to produce a less volatile fission product inventory. 6 figs.

The role of individual differences on perceptions of wearable fitness device trust, usability, and motivational impact.

PubMed

Rupp, Michael A; Michaelis, Jessica R; McConnell, Daniel S; Smither, Janan A

2018-07-01

Lack of physical activity is a severe health concern in the United States with fewer than half of all Americans meeting the recommended weekly physical activity guidelines. Although wearable fitness devices can be effective in motivating people to be active, consumers are abandoning this technology soon after purchase. We examined the impact of several user (i.e. personality, age, computer self-efficacy, physical activity level) and device characteristics (trust, usability, and motivational affordances) on the behavioral intentions to use a wearable fitness device. Novice users completed a brief interaction with a fitness device similar to a first purchase experience before completing questionnaires about their interaction. We found computer self-efficacy, physical activity level, as well as personality traits indirectly increased the desire to use a fitness device and influenced the saliency of perceived motivational affordances. Additionally, trust, usability, and perceived motivational affordances were associated with increased intentions to use fitness devices. Copyright © 2018 Elsevier Ltd. All rights reserved.

Local bipolar-transistor gain measurement for VLSI devices

NASA Astrophysics Data System (ADS)

Bonnaud, O.; Chante, J. P.

1981-08-01

A method is proposed for measuring the gain of a bipolar transistor region as small as possible. The measurement then allows the evaluation particularly of the effect of the emitter-base junction edge and the technology-process influence of VLSI-technology devices. The technique consists in the generation of charge carriers in the transistor base layer by a focused laser beam in order to bias the device in as small a region as possible. To reduce the size of the conducting area, a transversal reverse base current is forced through the base layer resistance in order to pinch in the emitter current in the illuminated region. Transistor gain is deduced from small signal measurements. A model associated with this technique is developed, and this is in agreement with the first experimental results.

Self-Consistent Monte Carlo Study of the Coulomb Interaction under Nano-Scale Device Structures

NASA Astrophysics Data System (ADS)

Sano, Nobuyuki

2011-03-01

It has been pointed that the Coulomb interaction between the electrons is expected to be of crucial importance to predict reliable device characteristics. In particular, the device performance is greatly degraded due to the plasmon excitation represented by dynamical potential fluctuations in high-doped source and drain regions by the channel electrons. We employ the self-consistent 3D Monte Carlo (MC) simulations, which could reproduce both the correct mobility under various electron concentrations and the collective plasma waves, to study the physical impact of dynamical potential fluctuations on device performance under the Double-gate MOSFETs. The average force experienced by an electron due to the Coulomb interaction inside the device is evaluated by performing the self-consistent MC simulations and the fixed-potential MC simulations without the Coulomb interaction. Also, the band-tailing associated with the local potential fluctuations in high-doped source region is quantitatively evaluated and it is found that the band-tailing becomes strongly dependent of position in real space even inside the uniform source region. This work was partially supported by Grants-in-Aid for Scientific Research B (No. 2160160) from the Ministry of Education, Culture, Sports, Science and Technology in Japan.

Variable friction device for structural control based on duo-servo vehicle brake: Modeling and experimental validation

NASA Astrophysics Data System (ADS)

Cao, Liang; Downey, Austin; Laflamme, Simon; Taylor, Douglas; Ricles, James

2015-07-01

Supplemental damping can be used as a cost-effective method to reduce structural vibrations. In particular, passive systems are now widely accepted and have numerous applications in the field. However, they are typically tuned to specific excitations and their performances are bandwidth-limited. A solution is to use semi-active devices, which have shown to be capable of substantially enhanced mitigation performance. The authors have recently proposed a new type of semi-active device, which consists of a variable friction mechanism based on a vehicle duo-servo drum brake, a mechanically robust and reliable technology. The theoretical performance of the proposed device has been previously demonstrated via numerical simulations. In this paper, we further the understanding of the device, termed Modified Friction Device (MFD) by fabricating a small scale prototype and characterizing its dynamic behavior. While the dynamics of friction is well understood for automotive braking technology, we investigate for the first time the dynamic behavior of this friction mechanism at low displacements and velocities, in both forward and backward directions, under various hydraulic pressures. A modified 3-stage dynamic model is introduced. A LuGre friction model is used to characterize the friction zone (Stage 1), and two pure stiffness regions to characterize the dynamics of the MFD once the rotation is reversed and the braking shoes are sticking to the drum (Stage 2) and the rapid build up of forces once the shoes are held by the anchor pin (Stage 3). The proposed model is identified experimentally by subjecting the prototype to harmonic excitations. It is found that the proposed model can be used to characterize the dynamics of the MFD, and that the largest fitting error arises at low velocity under low pressure input. The model is then verified by subjecting the MFD to two different earthquake excitations under different pressure inputs. The model is capable of tracking the device's response, despite a lower fitting performance under low pressure and small force output, as it was found in the harmonic tests due to the possible nonlinearity in Stage 2 of the model.

InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

NASA Astrophysics Data System (ADS)

Sang, Liwen; Liao, Meiyong; Koide, Yasuo; Sumiya, Masatomo

2015-03-01

InxGa1-xN, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for the high-efficiency next-generation thin-film photovoltaic applications. Although the adoption of thick InGaN film as the active region is desirable to obtain efficient light absorption and carrier collection compared to InGaN/GaN quantum wells structure, the understanding on the effect from structural design is still unclear due to the poor-quality InGaN films with thickness and difficulty of p-type doping. In this paper, we comprehensively investigate the effects from film epitaxy, doping, and device structural design on the performances of the InGaN-based solar cells. The high-quality InGaN thick film is obtained on AlN/sapphire template, and p-In0.08Ga0.92N is achieved with a high hole concentration of more than 1018 cm-3. The dependence of the photovoltaic performances on different structures, such as active regions and p-type regions is analyzed with respect to the carrier transport mechanism in the dark and under illumination. The strategy of improving the p-i interface by using a super-thin AlN interlayer is provided, which successfully enhances the performance of the solar cells.

Apparatus And Method Of Using Flexible Printed Circuit Board In Optical Transceiver Device

DOEpatents

Anderson, Gene R.; Armendariz, Marcelino G.; Bryan, Robert P.; Carson, Richard F.; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reysen, Bill H.

2005-03-15

This invention relates to a flexible printed circuit board that is used in connection with an optical transmitter, receiver or transceiver module. In one embodiment, the flexible printed circuit board has flexible metal layers in between flexible insulating layers, and the circuit board comprises: (1) a main body region orientated in a first direction having at least one electrical or optoelectronic device; (2) a plurality of electrical contact pads integrated into the main body region, where the electrical contact pads function to connect the flexible printed circuit board to an external environment; (3) a buckle region extending from one end of the main body region; and (4) a head region extending from one end of the buckle region, and where the head region is orientated so that it is at an angle relative to the direction of the main body region. The electrical contact pads may be ball grid arrays, solder balls or land-grid arrays, and they function to connect the circuit board to an external environment. A driver or amplifier chip may be adapted to the head region of the flexible printed circuit board. In another embodiment, a heat spreader passes along a surface of the head region of the flexible printed circuit board, and a window is formed in the head region of the flexible printed circuit board. Optoelectronic devices are adapted to the head spreader in such a manner that they are accessible through the window in the flexible printed circuit board.

Comparison of home and away-from-home physical activity using accelerometers and cellular network-based tracking devices.

PubMed

Ramulu, Pradeep Y; Chan, Emilie S; Loyd, Tara L; Ferrucci, Luigi; Friedman, David S

2012-08-01

Measuring physical at home and away from home is essential for assessing health and well-being, and could help design interventions to increase physical activity. Here, we describe how physical activity at home and away from home can be quantified by combining information from cellular network-based tracking devices and accelerometers. Thirty-five working adults wore a cellular network-based tracking device and an accelerometer for 6 consecutive days and logged their travel away from home. Performance of the tracking device was determined using the travel log for reference. Tracking device and accelerometer data were merged to compare physical activity at home and away from home. The tracking device detected 98.6% of all away-from-home excursions, accurately measured time away from home and demonstrated few prolonged signal drop-out periods. Most physical activity took place away from home on weekdays, but not on weekends. Subjects were more physically active per unit of time while away from home, particularly on weekends. Cellular network-based tracking devices represent an alternative to global positioning systems for tracking location, and provide information easily integrated with accelerometers to determine where physical activity takes place. Promoting greater time spent away from home may increase physical activity.

Investigation of biomechanical behavior of lumbar vertebral segments with dynamic stabilization device using finite element approach

NASA Astrophysics Data System (ADS)

Deoghare, Ashish B.; Kashyap, Siddharth; Padole, Pramod M.

2013-03-01

Degenerative disc disease is a major source of lower back pain and significantly alters the biomechanics of the lumbar spine. Dynamic stabilization device is a remedial technique which uses flexible materials to stabilize the affected lumbar region while preserving the natural anatomy of the spine. The main objective of this research work is to investigate the stiffness variation of dynamic stabilization device under various loading conditions under compression, axial rotation and flexion. Three dimensional model of the two segment lumbar spine is developed using computed tomography (CT) scan images. The lumbar structure developed is analyzed in ANSYS workbench. Two types of dynamic stabilization are considered: one with stabilizing device as pedicle instrumentation and second with stabilization device inserted around the inter-vertebral disc. Analysis suggests that proper positioning of the dynamic stabilization device is of paramount significance prior to the surgery. Inserting the device in the posterior region indicates the adverse effects as it shows increase in the deformation of the inter-vertebral disc. Analysis executed by positioning stabilizing device around the inter-vertebral disc yields better result for various stiffness values under compression and other loadings. [Figure not available: see fulltext.

Extreme triple asymmetric (ETAS) epitaxial designs for increased efficiency at high powers in 9xx-nm diode lasers

NASA Astrophysics Data System (ADS)

Kaul, T.; Erbert, G.; Maaßdorf, A.; Martin, D.; Crump, P.

2018-02-01

Broad area lasers that are tailored to be most efficient at the highest achievable optical output power are sought by industry to decrease operation costs and improve system performance. Devices using Extreme-Double-ASymmetric (EDAS) epitaxial designs are promising candidates for improved efficiency at high optical output powers due to low series resistance, low optical loss and low carrier leakage. However, EDAS designs leverage ultra-thin p-side waveguides, meaning that the optical mode is shifted into the n-side waveguide, resulting in a low optical confinement in the active region, low gain and hence high threshold current, limiting peak performance. We introduce here explicit design considerations that enable EDAS-based devices to be developed with increased optical confinement in the active layer without changing the p-side layer thicknesses. Specifically, this is realized by introducing a third asymmetric component in the vicinity of the quantum well. We call this approach Extreme-Triple-ASymmetric (ETAS) design. A series of ETAS-based vertical designs were fabricated into broad area lasers that deliver up to 63% power conversion efficiency at 14 W CW optical output power from a 100 μm stripe laser, which corresponds to the operation point of a kW optical output power in a laser bar. The design process, the impact of structural changes on power saturation mechanisms and finally devices with improved performance will be presented.

OPS laser EPI design for different wavelengths

NASA Astrophysics Data System (ADS)

Moloney, J. V.; Hader, J.; Li, H.; Kaneda, Y.; Wang, T. S.; Yarborough, M.; Koch, S. W.; Stolz, W.; Kunert, B.; Bueckers, C.; Chaterjee, S.; Hardesty, G.

2009-02-01

Design of optimized semiconductor optically-pumped semiconductor lasers (OPSLs) depends on many ingredients starting from the quantum wells, barrier and cladding layers all the way through to the resonant-periodic gain (RPG) and high reflectivity Bragg mirror (DBR) making up the OPSL active mirror. Accurate growth of the individual layers making up the RPG region is critical if performance degradation due to cavity misalignment is to be avoided. Optimization of the RPG+DBR structure requires knowledge of the heat generation and heating sinking of the active mirror. Nonlinear Control Strategies SimuLaseTM software, based on rigorous many-body calculations of the semiconductor optical response, allows for quantum well and barrier optimization by correlating low intensity photoluminescence spectra computed for the design, with direct experimentally measured wafer-level edge and surface PL spectra. Consequently, an OPSL device optimization procedure ideally requires a direct iterative interaction between designer and grower. In this article, we discuss the application of the many-body microscopic approach to OPSL devices lasing at 850nm, 1040nm and 2μm. The latter device involves and application of the many-body approach to mid-IR OPSLs based on antimonide materials. Finally we will present results on based on structural modifications of the epitaxial structure and/or novel material combinations that offer the potential to extend OPSL technology to new wavelength ranges.

Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

DOEpatents

Welch, James D.

2000-01-01

Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

Observation of conducting filament growth in nanoscale resistive memories

NASA Astrophysics Data System (ADS)

Yang, Yuchao; Gao, Peng; Gaba, Siddharth; Chang, Ting; Pan, Xiaoqing; Lu, Wei

2012-03-01

Nanoscale resistive switching devices, sometimes termed memristors, have recently generated significant interest for memory, logic and neuromorphic applications. Resistive switching effects in dielectric-based devices are normally assumed to be caused by conducting filament formation across the electrodes, but the nature of the filaments and their growth dynamics remain controversial. Here we report direct transmission electron microscopy imaging, and structural and compositional analysis of the nanoscale conducting filaments. Through systematic ex-situ and in-situ transmission electron microscopy studies on devices under different programming conditions, we found that the filament growth can be dominated by cation transport in the dielectric film. Unexpectedly, two different growth modes were observed for the first time in materials with different microstructures. Regardless of the growth direction, the narrowest region of the filament was found to be near the dielectric/inert-electrode interface in these devices, suggesting that this region deserves particular attention for continued device optimization.

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Technical Reports Server (NTRS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-01-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Astrophysics Data System (ADS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-05-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Effect of hole transport on performance of infrared type-II superlattice light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Youxi; Suchalkin, Sergey; Kipshidze, Gela

2015-04-28

The effect of hole transport on the performance of infrared light emitting diodes (LED) was investigated. The active area of the LEDs comprised two type-II superlattices with different periods and widths connected in series. Electroluminescence spectra of the devices with different positions of long wave and mid wave superlattice sections were mostly contributed by the superlattice closest to the p-contact. The experimental results indicate that due to suppressed vertical hole transport, the recombination of electrically injected electrons and holes in a type II superlattice LED active region takes place within a few superlattice periods near p-barrier. Possible reason for themore » effect is reduction of hole diffusion coefficient in an active area of a superlattice LED under bias.« less

Ultrafast active control of UV light with plasmonic resonance on aluminum nanostripes

NASA Astrophysics Data System (ADS)

Wang, Kuidong; Li, Runze; Hsiao, Hui-Hsin; Chen, Long; Zhang, Haijuan; Chen, Jie

2018-05-01

Ultrafast active control of UV light with aluminum may become an efficient way for high-speed active UV devices. However, the nonlinear optical response of aluminum in the UV region is extremely small, which impedes the realization of the promising modulation depth on ultrafast control. Here, by using the surface plasmon resonance effect, we have achieved a 55-times enhancement in the modulation depth, as well as a short switching time of several picoseconds. Further investigation showed that such an enhancement mainly resulted from a two-order-of-magnitude boost in the response of the signal light to the lattice thermal variation at the plasmonic resonance condition. This improvement in the probing sensitivity could serve as an effective approach to resolve the dynamics of lattice vibrations in metals.

Enhanced performance of P3HT/(PCBM:ZnO:TiO{sub 2}) blend based hybrid organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ikram, M., E-mail: mianraj.1981@gmail.com; Murray, R.; Imran, M.

Highlights: • We fabricated hybrid bulk heterojunction organic solar cells. • TiO{sub 2} and ZnO nanoparticles replace PCBM with fixed amount of P3HT in active layer • PCE was significantly improved by the introduction of TiO{sub 2} and ZnO. • A possible route toward low-cost OPV. • To the best of my knowledge, this work is the first time going to report. - Abstract: Quaternary blend hybrid organic solar cells enjoy both an increased light absorption range and an easy method to fabricate because of the simple structure. In this study effects of mixing inorganic metal oxides (ZnO and TiO{submore » 2}) nanoparticles to the active layer of organic photovoltaics devices were investigated. The active layer primarily consists of various ratios of electron donor poly (3-hexylthiophene) (P3HT) and an electron acceptor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) together with nanostructured ZnO and TiO{sub 2} dispersed in chlorobenzene (CB) and 1,2-dichlorobenzene (DCB). The ratio of PCBM to nanoparticles was varied keeping the ratio of P3HT to acceptor material constant. Mixing of nanoparticle plays a significant role in the resulting power conversion efficiency (PCE) of the devices. An increased PCE for ZnO/TiO{sub 2} doped devices can be attributed to increased absorption in the visible region and enhanced charge collection due to the percolation networks formed by metal oxides nanoparticles.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolenbaugh, Jonathan M.; Naqi, Syed

A method to operate a clutch device in an electro-mechanical transmission mechanically-operatively coupled to an internal combustion engine and at least one electric machine includes, in response to a failure condition detected within a flow control device configured to facilitate flow of hydraulic fluid for operating the clutch device, selectively preventing the flow of hydraulic fluid from entering the flow control device and feeding the clutch device. Synchronization of the clutch device is initiated when the clutch device is intended for activation, and only if the clutch device is synchronized, the flow of hydraulic fluid is selectively permitted to entermore » the flow control device to activate the clutch device.« less

Electrochemical energy storage devices comprising self-compensating polymers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Paul; Bautista-Martinez, Jose Antonio; Friesen, Cody

The disclosed technology relates generally to devices comprising conductive polymers and more particularly to electrochemical devices comprising self-compensating conductive polymers. In one aspect, electrochemical energy storage device comprises a negative electrode comprising an active material including a redox-active polymer. The device additionally comprises a positive electrode comprising an active material including a redox-active polymer. The device further comprises an electrolyte material interposed between the negative electrode and positive electrode and configured to conduct mobile counterions therethrough between the negative electrode and positive electrode. At least one of the negative electrode redox-active polymer and the positive electrode redox-active polymer comprises amore » zwitterionic polymer unit configured to reversibly switch between a zwitterionic state in which the zwitterionic polymer unit has first and second charge centers having opposite charge states that compensate each other, and a non-zwitterionic state in which the zwitterionic polymer unit has one of the first and second charge centers whose charge state is compensated by mobile counterions.« less

Single mode, broad-waveguide ARROW-type semiconductor diode lasers

NASA Astrophysics Data System (ADS)

Al-Muhanna, Abdulrahman Ali

A broad transverse waveguide (low confinement) concept is used to achieve a record-high spatially incoherent cw output power of 11W for InGaAs active devices (λ = 0.97 μm) from 100μm wide-stripe and 2mm-long devices with low internal loss, α1 = 1cm-1, and high characteristic temperatures, T0 = 210K, and T1 = 1800K. A detailed above-threshold analysis reveals that reduction in gain spatial hole burning (GSHB) is possible in ARROW-type structures by using a low transverse confinement factor; consequently, a wider ARROW-core can be utilized. By incorporating both a broad-waveguide concept as well as an asymmetric structure in the transverse direction, and an ARROW-type structure in the lateral direction, a novel single-spatial mode diode laser with improved performance is obtained. Devices with low transverse confinement factor (Γ ~ 1%) and a core-region width of 7.8 μm achieved 510mW single-spatial mode pulsed output power (λ = 0.946 μm) with a full- width at half-maximum (FWHM) of the lateral far-field pattern of 4.7°.

All Inorganic Halide Perovskites Nanosystem: Synthesis, Structural Features, Optical Properties and Optoelectronic Applications.

PubMed

Li, Xiaoming; Cao, Fei; Yu, Dejian; Chen, Jun; Sun, Zhiguo; Shen, Yalong; Zhu, Ying; Wang, Lin; Wei, Yi; Wu, Ye; Zeng, Haibo

2017-03-01

The recent success of organometallic halide perovskites (OHPs) in photovoltaic devices has triggered lots of corresponding research and many perovskite analogues have been developed to look for devices with comparable performance but better stability. Upon the preparation of all inorganic halide perovskite nanocrystals (IHP NCs), research activities have soared due to their better stability, ultrahigh photoluminescence quantum yield (PL QY), and composition dependent luminescence covering the whole visible region with narrow line-width. They are expected to be promising materials for next generation lighting and display, and many other applications. Within two years, a lot of interesting results have been observed. Here, the synthesis of IHPs is reviewed, and their progresses in optoelectronic devices and optical applications, such as light-emitting diodes (LEDs), photodetectors (PDs), solar cells (SCs), and lasing, is presented. Information and recent understanding of their crystal structures and morphology modulations are addressed. Finally, a brief outlook is given, highlighting the presently main problems and their possible solutions and future development directions. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hybrid tunnel junction contacts to III-nitride light-emitting diodes

NASA Astrophysics Data System (ADS)

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

2016-02-01

In this work, we demonstrate highly doped GaN p-n tunnel junction (TJ) contacts on III-nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10-4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a (20\\bar{2}\\bar{1}) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Complementary resistive switching in BaTiO3/NiO bilayer with opposite switching polarities

NASA Astrophysics Data System (ADS)

Li, Shuo; Wei, Xianhua; Lei, Yao; Yuan, Xincai; Zeng, Huizhong

2016-12-01

Resistive switching behaviors have been investigated in the Au/BaTiO3/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO3 thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I-V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO3 and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

Simulating ideal assistive devices to reduce the metabolic cost of walking with heavy loads.

PubMed

Dembia, Christopher L; Silder, Amy; Uchida, Thomas K; Hicks, Jennifer L; Delp, Scott L

2017-01-01

Wearable robotic devices can restore and enhance mobility. There is growing interest in designing devices that reduce the metabolic cost of walking; however, designers lack guidelines for which joints to assist and when to provide the assistance. To help address this problem, we used musculoskeletal simulation to predict how hypothetical devices affect muscle activity and metabolic cost when walking with heavy loads. We explored 7 massless devices, each providing unrestricted torque at one degree of freedom in one direction (hip abduction, hip flexion, hip extension, knee flexion, knee extension, ankle plantarflexion, or ankle dorsiflexion). We used the Computed Muscle Control algorithm in OpenSim to find device torque profiles that minimized the sum of squared muscle activations while tracking measured kinematics of loaded walking without assistance. We then examined the metabolic savings provided by each device, the corresponding device torque profiles, and the resulting changes in muscle activity. We found that the hip flexion, knee flexion, and hip abduction devices provided greater metabolic savings than the ankle plantarflexion device. The hip abduction device had the greatest ratio of metabolic savings to peak instantaneous positive device power, suggesting that frontal-plane hip assistance may be an efficient way to reduce metabolic cost. Overall, the device torque profiles generally differed from the corresponding net joint moment generated by muscles without assistance, and occasionally exceeded the net joint moment to reduce muscle activity at other degrees of freedom. Many devices affected the activity of muscles elsewhere in the limb; for example, the hip flexion device affected muscles that span the ankle joint. Our results may help experimentalists decide which joint motions to target when building devices and can provide intuition for how devices may interact with the musculoskeletal system. The simulations are freely available online, allowing others to reproduce and extend our work.

Simulating ideal assistive devices to reduce the metabolic cost of walking with heavy loads

PubMed Central

Silder, Amy; Uchida, Thomas K.; Hicks, Jennifer L.; Delp, Scott L.

2017-01-01

Wearable robotic devices can restore and enhance mobility. There is growing interest in designing devices that reduce the metabolic cost of walking; however, designers lack guidelines for which joints to assist and when to provide the assistance. To help address this problem, we used musculoskeletal simulation to predict how hypothetical devices affect muscle activity and metabolic cost when walking with heavy loads. We explored 7 massless devices, each providing unrestricted torque at one degree of freedom in one direction (hip abduction, hip flexion, hip extension, knee flexion, knee extension, ankle plantarflexion, or ankle dorsiflexion). We used the Computed Muscle Control algorithm in OpenSim to find device torque profiles that minimized the sum of squared muscle activations while tracking measured kinematics of loaded walking without assistance. We then examined the metabolic savings provided by each device, the corresponding device torque profiles, and the resulting changes in muscle activity. We found that the hip flexion, knee flexion, and hip abduction devices provided greater metabolic savings than the ankle plantarflexion device. The hip abduction device had the greatest ratio of metabolic savings to peak instantaneous positive device power, suggesting that frontal-plane hip assistance may be an efficient way to reduce metabolic cost. Overall, the device torque profiles generally differed from the corresponding net joint moment generated by muscles without assistance, and occasionally exceeded the net joint moment to reduce muscle activity at other degrees of freedom. Many devices affected the activity of muscles elsewhere in the limb; for example, the hip flexion device affected muscles that span the ankle joint. Our results may help experimentalists decide which joint motions to target when building devices and can provide intuition for how devices may interact with the musculoskeletal system. The simulations are freely available online, allowing others to reproduce and extend our work. PMID:28700630

Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

NASA Technical Reports Server (NTRS)

Aveline, David C.; Adell, Philippe C.; Allen, Gregory R.; Guertin, Steven M.; McClure, Steven S.

2011-01-01

Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all of the sensitive regions of the studied device with fine resolution, unlike heavy ion experiments. The problematic regions can be precisely identified, and it provides a considerable amount of information about the circuit. In addition, the system allows flexibility for testing the device in different configurations in situ.

Chitin-induced T6SS in Vibrio cholerae is dependent on ChiS activation.

PubMed

Chourashi, Rhishita; Das, Suman; Dhar, Debarpan; Okamoto, Keinosuke; Mukhopadhyay, Asish K; Chatterjee, Nabendu Sekhar

2018-05-01

Vibrio cholerae regularly colonizes the chitinous exoskeleton of crustacean shells in the aquatic region. The type 6 secretion system (T6SS) in V. cholerae is an interbacterial killing device. This system is thought to provide a competitive advantage to V. cholerae in a polymicrobial community of the aquatic region under nutrient-poor conditions. V. cholerae chitin sensing is known to be initiated by the activation of a two-component sensor histidine kinase ChiS in the presence of GlcNAc2 (N,N'-diacetylchitobiose) residues generated by the action of chitinases on chitin. It is known that T6SS in V. cholerae is generally induced by chitin. However, the effect of ChiS activation on T6SS is unknown. Here, we found that ChiS inactivation resulted in impaired bacterial killing and reduced expression of T6SS genes. Active ChiS positively affected T6SS-mediated natural transformation in V. cholerae. ChiS depletion or inactivation also resulted in reduced colonization on insoluble chitin surfaces. Therefore, we have shown that V. cholerae colonization on chitinous surfaces activates ChiS, which promotes T6SS-dependent bacterial killing and horizontal gene transfer. We also highlight the importance of chitinases in T6SS upregulation.

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

NASA Astrophysics Data System (ADS)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Smart Device Use and Perceived Physical and Psychosocial Outcomes among Hong Kong Adolescents

PubMed Central

Kwok, Stephen Wai Hang; Lee, Paul Hong; Lee, Regina Lai Tong

2017-01-01

Excessive electronic screen-based activities have been found to be associated with negative outcomes. The aim of this study was to investigate the prevalences and patterns of smart device activities and the purposes and perceived outcomes related to smart device use, and the differences in patterns of smart device activities between adolescents who did and did not perceive these outcomes. The study was a cross-sectional survey of Hong Kong primary and secondary school students. Demographic characteristics, purpose and pattern of the activities, and frequencies of the outcomes were measured. Data from 960 adolescents aged 10–19 were analyzed. Nearly 86% of the sample use smart device daily. The one-week prevalence of perceived sleep deprivation, eye discomfort, musculoskeletal discomfort, family conflict and cyberbullying victimization related to smart device use were nearly 50%, 45%, 40%, 20% and 5% respectively. More than 25% of the respondents were at risk of negative outcomes related to smart device activities for more than 1 h per day, browsing and gaming on at least 4 days per week and watching TV/movies and posting on more than 2 days per week. Their patterns of smart device activities may put a significant number of them at risk of negative outcomes. PMID:28218719

Active cleaning technique device

NASA Technical Reports Server (NTRS)

Shannon, R. L.; Gillette, R. B.

1973-01-01

The objective of this program was to develop a laboratory demonstration model of an active cleaning technique (ACT) device. The principle of this device is based primarily on the technique for removing contaminants from optical surfaces. This active cleaning technique involves exposing contaminated surfaces to a plasma containing atomic oxygen or combinations of other reactive gases. The ACT device laboratory demonstration model incorporates, in addition to plasma cleaning, the means to operate the device as an ion source for sputtering experiments. The overall ACT device includes a plasma generation tube, an ion accelerator, a gas supply system, a RF power supply and a high voltage dc power supply.

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

Functional connectivity and dynamics of cortical-thalamic networks co-cultured in a dual compartment device

NASA Astrophysics Data System (ADS)

Kanagasabapathi, Thirukumaran T.; Massobrio, Paolo; Barone, Rocco Andrea; Tedesco, Mariateresa; Martinoia, Sergio; Wadman, Wytse J.; Decré, Michel M. J.

2012-06-01

Co-cultures containing dissociated cortical and thalamic cells may provide a unique model for understanding the pathophysiology in the respective neuronal sub-circuitry. In addition, developing an in vitro dissociated co-culture model offers the possibility of studying the system without influence from other neuronal sub-populations. Here we demonstrate a dual compartment system coupled to microelectrode arrays (MEAs) for co-culturing and recording spontaneous activities from neuronal sub-populations. Propagation of electrical activities between cortical and thalamic regions and their interdependence in connectivity is verified by means of a cross-correlation algorithm. We found that burst events originate in the cortical region and drive the entire cortical-thalamic network bursting behavior while mutually weak thalamic connections play a relevant role in sustaining longer burst events in cortical cells. To support these experimental findings, a neuronal network model was developed and used to investigate the interplay between network dynamics and connectivity in the cortical-thalamic system.

Raman Investigation of Temperature Profiles of Phospholipid Dispersions in the Biochemistry Laboratory

NASA Astrophysics Data System (ADS)

Craig, Norman C.

2015-06-01

The temperature dependence of self-assembled, cell-like dispersions of phospholipids is investigated with Raman spectroscopy in the biochemistry laboratory. Vibrational modes in the hydrocarbon interiors of phospholipid bilayers are strongly Raman active, whereas the vibrations of the polar head groups and the water matrix have little Raman activity. From Raman spectra increases in fluidity of the hydrocarbon chains can be monitored with intensity changes as a function of temperature in the CH-stretching region. The experiment uses detection of scattered 1064-nm laser light (Nicolet NXR module) by a Fourier transform infrared spectrometer (Nicolet 6700). A thermoelectric heater-cooler device (Melcor) gives convenient temperature control from 5 to 95°C for samples in melting point capillaries. Use of deuterium oxide instead of water as the matrix avoids some absorption of the exciting laser light and interference with intensity observations in the CH-stretching region. Phospholipids studied range from dimyristoylphosphotidyl choline (C14, transition T = 24°C) to dibehenoylphosphotidyl choline (C22, transition T = 74°C).

In vivo therapeutic potential of Dicer-hunting siRNAs targeting infectious hepatitis C virus.

PubMed

Watanabe, Tsunamasa; Hatakeyama, Hiroto; Matsuda-Yasui, Chiho; Sato, Yusuke; Sudoh, Masayuki; Takagi, Asako; Hirata, Yuichi; Ohtsuki, Takahiro; Arai, Masaaki; Inoue, Kazuaki; Harashima, Hideyoshi; Kohara, Michinori

2014-04-23

The development of RNA interference (RNAi)-based therapy faces two major obstacles: selecting small interfering RNA (siRNA) sequences with strong activity, and identifying a carrier that allows efficient delivery to target organs. Additionally, conservative region at nucleotide level must be targeted for RNAi in applying to virus because hepatitis C virus (HCV) could escape from therapeutic pressure with genome mutations. In vitro preparation of Dicer-generated siRNAs targeting a conserved, highly ordered HCV 5' untranslated region are capable of inducing strong RNAi activity. By dissecting the 5'-end of an RNAi-mediated cleavage site in the HCV genome, we identified potent siRNA sequences, which we designate as Dicer-hunting siRNAs (dh-siRNAs). Furthermore, formulation of the dh-siRNAs in an optimized multifunctional envelope-type nano device inhibited ongoing infectious HCV replication in human hepatocytes in vivo. Our efforts using both identification of optimal siRNA sequences and delivery to human hepatocytes suggest therapeutic potential of siRNA for a virus.

Space-charge-limited solid-state triode

NASA Technical Reports Server (NTRS)

Shumka, A. (Inventor)

1975-01-01

A solid-state triode is provided from a wafer of nearinstrinsic semiconductor material sliced into filaments of rectangular cross section. Before slicing, emitter and collector regions are formed on the narrow sides of the filaments, and after slicing gate regions are formed in arrow strips extending longitudinally along the midsections of the wide sides of the filaments. Contacts are then formed on the emitter, collector and gate regions of each filament individually for a single filament device, or in parallel for an array of filament devices to increase load current.

Imposed Power of Breathing Associated With Use of an Impedance Threshold Device

DTIC Science & Technology

2007-02-01

threshold device and a sham impedance threshold device. DESIGN: Prospective randomized blinded protocol. SETTING: University medical center. PATIENTS...for males). METHODS: The volunteers completed 2 trials of breathing through a face mask fitted with an active impedance threshold device set to open...at -7cmH 2 O pressure, or with a sham impedance threshold device, which was identical to the active device except that it did not contain an

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

75 FR 69447 - Agency Information Collection Activities; Proposed Collection; Comment Request; Medical Devices...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-11-12

... serious adverse health consequences, (2) the device is intended to be implanted in the human body for more... DEPARTMENT OF HEALTH AND HUMAN SERVICES Food and Drug Administration [Docket No. FDA-2010-N-0555] Agency Information Collection Activities; Proposed Collection; Comment Request; Medical Devices; Device...

Germanium: From Its Discovery to SiGe Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haller, E.E.

2006-06-14

Germanium, element No.32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premiermore » gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.« less

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

NASA Astrophysics Data System (ADS)

Meneghini, M.; Trivellin, N.; Berti, M.; Cesca, T.; Gasparotto, A.; Vinattieri, A.; Bogani, F.; Zhu, D.; Humphreys, C. J.; Meneghesso, G.; Zanoni, E.

2013-03-01

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples.

A sLORETA study for gaze-independent BCI speller.

PubMed

Xingwei An; Jinwen Wei; Shuang Liu; Dong Ming

2017-07-01

EEG-based BCI (brain-computer-interface) speller, especially gaze-independent BCI speller, has become a hot topic in recent years. It provides direct spelling device by non-muscular method for people with severe motor impairments and with limited gaze movement. Brain needs to conduct both stimuli-driven and stimuli-related attention in fast presented BCI paradigms for such BCI speller applications. Few researchers studied the mechanism of brain response to such fast presented BCI applications. In this study, we compared the distribution of brain activation in visual, auditory, and audio-visual combined stimuli paradigms using sLORETA (standardized low-resolution brain electromagnetic tomography). Between groups comparisons showed the importance of visual and auditory stimuli in audio-visual combined paradigm. They both contribute to the activation of brain regions, with visual stimuli being the predominate stimuli. Visual stimuli related brain region was mainly located at parietal and occipital lobe, whereas response in frontal-temporal lobes might be caused by auditory stimuli. These regions played an important role in audio-visual bimodal paradigms. These new findings are important for future study of ERP speller as well as the mechanism of fast presented stimuli.

SDVSRM - a new SSRM based technique featuring dynamically adjusted, scanner synchronized sample voltages for measurement of actively operated devices.

PubMed

Doering, Stefan; Wachowiak, Andre; Roetz, Hagen; Eckl, Stefan; Mikolajick, Thomas

2018-06-01

Scanning spreading resistance microscopy (SSRM) with its high spatial resolution and high dynamic signal range is a powerful tool for two-dimensional characterization of semiconductor dopant areas. However, the application of the method is limited to devices in equilibrium condition, as the investigation of actively operated devices would imply potential differences within the device, whereas SSRM relies on a constant voltage difference between sample surface and probe tip. Furthermore, the standard preparation includes short circuiting of all device components, limiting applications to devices in equilibrium condition. In this work scanning dynamic voltage spreading resistance microscopy (SDVSRM), a new SSRM based two pass atomic force microscopy (AFM) technique is introduced, overcoming these limitations. Instead of short circuiting the samples during preparation, wire bond devices are used allowing for active control of the individual device components. SDVSRM consists of two passes. In the first pass the local sample surface voltage dependent on the dc biases applied to the components of the actively driven device is measured as in scanning voltage microscopy (SVM). The local spreading resistance is measured within the second pass, in which the afore obtained local surface voltage is used to dynamically adjust the terminal voltages of the device under test. This is done in a way that the local potential difference across the nano-electrical contact matches the software set SSRM measurement voltage, and at the same time, the internal voltage differences within the device under test are maintained. In this work the proof of the concept could be demonstrated by obtaining spreading resistance data of an actively driven photodiode test device. SDVSRM adds a higher level of flexibility in general to SSRM, as occurring differences in cross section surface voltage are taken into account. These differences are immanent for actively driven devices, but can also be present at standard, short circuited samples. Therefore, SDVSRM could improve the characterization under equilibrium conditions as well. Copyright © 2018. Published by Elsevier B.V.

Photovoltaic and thermophotovoltaic devices with quantum barriers

DOEpatents

Wernsman, Bernard R [Jefferson Hills, PA

2007-04-10

A photovoltaic or thermophotovoltaic device includes a diode formed by p-type material and n-type material joined at a p-n junction and including a depletion region adjacent to said p-n junction, and a quantum barrier disposed near or in the depletion region of the p-n junction so as to decrease device reverse saturation current density while maintaining device short circuit current density. In one embodiment, the quantum barrier is disposed on the n-type material side of the p-n junction and decreases the reverse saturation current density due to electrons while in another, the barrier is disposed on the p-type material side of the p-n junction and decreases the reverse saturation current density due to holes. In another embodiment, both types of quantum barriers are used.

Light trapping architecture for photovoltaic and photodector applications

DOEpatents

Forrest, Stephen R.; Lunt, Richard R.; Slootsky, Michael

2016-08-09

There is disclosed photovoltaic device structures which trap admitted light and recycle it through the contained photosensitive materials to maximize photoabsorption. For example, there is disclosed a photosensitive optoelectronic device comprising: a first reflective layer comprising a thermoplastic resin; a second reflective layer substantially parallel to the first reflective layer; a first transparent electrode layer on at least one of the first and second reflective layer; and a photosensitive region adjacent to the first electrode, wherein the first transparent electrode layer is substantially parallel to the first reflective layer and adjacent to the photosensitive region, and wherein the device has an exterior face transverse to the planes of the reflective layers where the exterior face has an aperture for admission of incident radiation to the interior of the device.

Cooling apparatus and method

DOEpatents

Mayes, James C [Sugar Land, TX

2009-05-05

A device and method provide for cooling of a system having an energy source, one or more devices that actively consume energy, and one or more devices that generate heat. The device may include one or more thermoelectric coolers ("TECs") in conductive engagement with at least one of the heat-generating devices, and an energy diverter for diverting at least a portion of the energy from the energy source that is not consumed by the active energy-consuming devices to the TECs.

The Construction and Study of Improved Al(x)Ga(1-x)As-GaAs Heterostructure Devices.

DTIC Science & Technology

1985-03-01

at the upward arrow and extends I pm to the top dioes are polg scratches. * 257 ApoI. P""y. Left 42 (3), 1 Fobruay 1963 000349161 /83/030257.0=51.00 9...toe emission envelope to migner 1% doped (on the p-contact aide) . The active energy; in addition. the pain energy changes region is confined on the...smllrtmn pain Profile Insa quantum-well heterVostructur (QWH] car. range (40 meV). The far-field emission generally exhibits a rier band fillng can be

Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hou, Y., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn; IMEC, Kapeldreef 75, B-3001 Heverlee; Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee

2016-07-11

The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices.

Step-Tapered Active-Region Mid-Infrared Quantum Cascade Lasers and Novel Fabrication Processes for Buried Heterostructures

DTIC Science & Technology

2015-07-28

up, g, IFR , E54 (or E43), and 54 (or 43) in STA-DPR, STA-SPR, and shallow-well QCL structures. 1 CHAPTER ONE INTRODUCTION 1.1 Introduction...much less transition diagonality than in shallow-well TA-QCL devices. To that effect, when calculating the IFR factor, summed over all transition...219 Å2 ps vs. 239 Å2 ps). However, when calculating the IFR factor, summed over all transition energies, affecting the EL linewidth [i.e., Eqn. (1

Tunable plasmonic crystal

DOEpatents

Dyer, Gregory Conrad; Shaner, Eric A.; Reno, John L.; Aizin, Gregory

2015-08-11

A tunable plasmonic crystal comprises several periods in a two-dimensional electron or hole gas plasmonic medium that is both extremely subwavelength (.about..lamda./100) and tunable through the application of voltages to metal electrodes. Tuning of the plasmonic crystal band edges can be realized in materials such as semiconductors and graphene to actively control the plasmonic crystal dispersion in the terahertz and infrared spectral regions. The tunable plasmonic crystal provides a useful degree of freedom for applications in slow light devices, voltage-tunable waveguides, filters, ultra-sensitive direct and heterodyne THz detectors, and THz oscillators.

Silicone substrate with in situ strain relief for stretchable thin-film transistors

NASA Astrophysics Data System (ADS)

Graz, Ingrid M.; Cotton, Darryl P. J.; Robinson, Adam; Lacour, Stéphanie P.

2011-03-01

We have manufactured stretchable thin-film transistors and interconnects directly onto an engineered silicone matrix with localized and graded mechanical compliance. The fabrication only involves planar and standard processing. Brittle active device materials are patterned on non deformable elastomer regions (strain <1% at all times) while interconnects run smoothly from "stiff" to "soft" elastomer. Pentacene thin-film transistors sustain applied strain up to 13% without electrical degradation and mechanical fracture. This integrated approach opens promising options for the manufacture of physically adaptable and transformable circuitry.

Functional design for operational earth resources ground data processing

NASA Technical Reports Server (NTRS)

Baldwin, C. J. (Principal Investigator); Bradford, L. H.; Hutson, D. E.; Jugle, D. R.

1972-01-01

The author has identified the following significant results. Study emphasis was on developing a unified concept for the required ground system, capable of handling data from all viable acquisition platforms and sensor groupings envisaged as supporting operational earth survey programs. The platforms considered include both manned and unmanned spacecraft in near earth orbit, and continued use of low and high altitude aircraft. The sensor systems include both imaging and nonimaging devices, operated both passively and actively, from the ultraviolet to the microwave regions of the electromagnetic spectrum.

Nanophotonic Hot Electron Solar-Blind Ultraviolet Detectors with a Metal-Oxide-Semiconductor Structure

NASA Astrophysics Data System (ADS)

Wang, Zhiyuan

Solar-blind ultraviolet detection refers to photon detection specifically in the wavelength range of 200 nm to 320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. In this thesis, we design and fabricate a nanophotonic metal-oxide-semiconductor device for solar-blind UV detection. Instead of using semiconductors as the active absorber, we use metal Sn nano- grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO 2 interfacial barrier, thereby generating photocurrent between metal and semiconductor region upon UV excitation. The large metal/oxide interfacial energy barrier enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, 85% UV absorption and hot electron excitation can be achieved within the mean free path of 20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. Various fabrication techniques have been developed for preparing nano gratings. For nominally 20 nm-thick deposited Sn, the self- formed pseudo-periodic nanostructure help achieve 75% UV absorption from lambda=200 nm to 300 nm. With another layer of nominally 20 nm-thick Sn, similar UV absorption is maintained while conductivity is improved, which is beneficial for overall device efficiency. The Sn/SiO2/Si MOS devices show good solar-blind character while achieving 13% internal quantum efficiency for 260 nm UV with only 20 nm-thick Sn and some devices demonstrate much higher (even >100%) internal quantum efficiency. While a more accurate estimation of device effective area is needed for proving our calculation, these results indeed show a great potential for this type of hot-electron-based photodetectors and for Sn nanostructure as an effective UV absorber. The simple geometry of the self- assembled Sn nano-gratings and MOS structure make this novel type of device easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices.

High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

NASA Astrophysics Data System (ADS)

Pastor, David; Gandhi, Hemi H.; Monmeyran, Corentin P.; Akey, Austin J.; Milazzo, Ruggero; Cai, Yan; Napolitani, Enrico; Gwilliam, Russell M.; Crowe, Iain F.; Michel, Jurgen; Kimerling, L. C.; Agarwal, Anuradha; Mazur, Eric; Aziz, Michael J.

2018-04-01

Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 1020 cm-3 n+ carrier concentration in tensile-strained epitaxial germanium-on-silicon. Scanning electron microscopy shows that after laser treatment, samples implanted with P have an ablated surface, whereas P + F co-implanted samples have good crystallinity and a smooth surface topography. We characterize P and F concentration depth profiles using secondary ion mass spectrometry and spreading resistance profiling. The peak carrier concentration, 1020 cm-3 at 80 nm below the surface, coincides with the peak F concentration, illustrating the key role of F in increasing donor activation. Cross-sectional transmission electron microscopy of the co-implanted sample shows that the Ge epilayer region damaged during implantation is a single crystal after PLM. High-resolution X-ray diffraction and Raman spectroscopy measurements both indicate that the as-grown epitaxial layer strain is preserved after PLM. These results demonstrate that co-implantation and PLM can achieve the combination of n+ carrier concentration and strain in Ge epilayers necessary for next-generation, high-performance Ge-on-Si devices.

The Use of Computational Fluid Dynamics in the Development of Ventricular Assist Devices

PubMed Central

Fraser, Katharine H.; Taskin, M. Ertan; Griffith, Bartley P.; Wu, Zhongjun J.

2010-01-01

Progress in the field of prosthetic cardiovascular devices has significantly contributed to the rapid advancements in cardiac therapy during the last four decades. The concept of mechanical circulatory assistance was established with the first successful clinical use of heart-lung machines for cardiopulmonary bypass. Since then a variety of devices have been developed to replace or assist diseased components of the cardiovascular system. Ventricular assist devices (VADs) are basically mechanical pumps designed to augment or replace the function of one or more chambers of the failing heart. Computational Fluid Dynamics (CFD) is an attractive tool in the development process of VADs, allowing numerous different designs to be characterized for their functional performance virtually, for a wide range of operating conditions, without the physical device being fabricated. However, VADs operate in a flow regime which is traditionally difficult to simulate; the transitional region at the boundary of laminar and turbulent flow. Hence different methods have been used and the best approach is debatable. In addition to these fundamental fluid dynamic issues, blood consists of biological cells. Device-induced biological complications are a serious consequence of VAD use. The complications include blood damage (haemolysis, blood cell activation), thrombosis and emboli. Patients are required to take anticoagulation medication constantly which may cause bleeding. Despite many efforts blood damage models have still not been implemented satisfactorily into numerical analysis of VADs, which severely undermines the full potential of CFD. This paper reviews the current state of the art CFD for analysis of blood pumps, including a practical critical review of the studies to date, which should help device designers choose the most appropriate methods; a summary of blood damage models and the difficulties in implementing them into CFD; and current gaps in knowledge and areas for future work. PMID:21075669

Surface-related phase noise in SAW resonators.

PubMed

Enguang, Dai

2002-05-01

With the advent of nanotechnologies, electronic devices are shrinking in thickness and width to reduce mass and, thereby, increase frequency and spe Lithographic approaches are capable of creating metal connections with thickness and lateral dimensions down to about 20 nm, approaching the molecular scale. As a result, the dimensions of outer particles are comparable with, or even larger than, those of active or passive regions in electronics devices. Therefore, directing our attention toward the effect of surface fluctuations is of practical significance. In fact, electronic device surface-related phenomena have already received more and more attention as device size decreases. In connection with surface phase noise, selection of a suitable device with high surface sensitivity is important. In this paper, high Q-value surface acoustic wave resonators were employed because of their strong sensitivity to surface perturbation. Phase noise in SAW resonators related to surface particle motion has been examined both theoretically and experimentally. This kind of noise has been studied from the point of view of a stochastic process resulting from particle molecular adsorption and desorption. Experimental results suggest that some volatile vapors can change flicker noise 1/f and random walk noise 1/f2. An analysis has been made indicating that these effects are not associated with Q value variation, but are generated by the change in the dynamic rate of adsorption and desorption of surface particles. Research on particle motion above the device substrate might explain the differences observed from the model based only on the substrate itself. Results might lead to a better understanding of the phase noise mechanism in micro-electronic devices and help us to build oscillators with improved performance.

Modeling the influence of the VV delay for CRT on the electrical activation patterns in absence of conduction through the AV node

NASA Astrophysics Data System (ADS)

Romero, D. A.; Sebastián, Rafael; Plank, Gernot; Vigmond, Edward J.; Frangi, Alejandro F.

2008-03-01

From epidemiological studies, it has been shown that 0.2% of men and 0.1% of women suffer from a degree of atrioventricular (AV) block. In recent years, the palliative treatment for third degree AV block has included Cardiac Resynchronization Therapy (CRT). It was found that patients show more clinical improvement in the long term with CRT compared with single chamber devices. Still, an important group of patients does not improve their hemodynamic function as much as could be expected. A better understanding of the basis for optimizing the devices settings (among which the VV delay) will help to increase the number of responders. In this work, a finite element model of the left and right ventricles was generated using an atlas-based approach for their segmentation, which includes fiber orientation. The electrical activity was simulated with the electrophysiological solver CARP, using the Ten Tusscher et al. ionic model for the myocardium, and the DiFrancesco-Noble for Purkinje fibers. The model is representative of a patient without dilated or ischemic cardiomyopathy. The simulation results were analyzed for total activation times and latest activated regions at different VV delays and pre-activations (RV pre-activated, LV pre-activated). To optimize the solution, simulations are compared against the His-Purkinje network activation (normal physiological conduction), and interventricular septum activation (as collision point for the two wave fronts). The results were analyzed using Pearson's coefficient of correlation for point to point comparisons between simulation cases. The results of this study contribute to gain insight on the VV delay and how its adjustment might influence response to CRT and how it can be used to optimize the treatment.

Organic spintronic devices and methods for making the same

DOEpatents

Vardeny, Zee Valentine; Ndobe, Alex

2014-09-23

An organic spintronic photovoltaic device (100) having an organic electron active layer (102) functionally associated with a pair of electrodes (104, 106). The organic electron active layer (102) can include a spin active molecular radical distributed in the active layer (102) which increases spin-lattice relaxation rates within the active layer (102). The increased spin lattice relaxation rate can also influence the efficiency of OLED and charge mobility in FET devices.

Assessment of laboratory and daily energy expenditure estimates from consumer multi-sensor physical activity monitors.

PubMed

Chowdhury, Enhad A; Western, Max J; Nightingale, Thomas E; Peacock, Oliver J; Thompson, Dylan

2017-01-01

Wearable physical activity monitors are growing in popularity and provide the opportunity for large numbers of the public to self-monitor physical activity behaviours. The latest generation of these devices feature multiple sensors, ostensibly similar or even superior to advanced research instruments. However, little is known about the accuracy of their energy expenditure estimates. Here, we assessed their performance against criterion measurements in both controlled laboratory conditions (simulated activities of daily living and structured exercise) and over a 24 hour period in free-living conditions. Thirty men (n = 15) and women (n = 15) wore three multi-sensor consumer monitors (Microsoft Band, Apple Watch and Fitbit Charge HR), an accelerometry-only device as a comparison (Jawbone UP24) and validated research-grade multi-sensor devices (BodyMedia Core and individually calibrated Actiheart™). During discrete laboratory activities when compared against indirect calorimetry, the Apple Watch performed similarly to criterion measures. The Fitbit Charge HR was less consistent at measurement of discrete activities, but produced similar free-living estimates to the Apple Watch. Both these devices underestimated free-living energy expenditure (-394 kcal/d and -405 kcal/d, respectively; P<0.01). The multi-sensor Microsoft Band and accelerometry-only Jawbone UP24 devices underestimated most laboratory activities and substantially underestimated free-living expenditure (-1128 kcal/d and -998 kcal/d, respectively; P<0.01). None of the consumer devices were deemed equivalent to the reference method for daily energy expenditure. For all devices, there was a tendency for negative bias with greater daily energy expenditure. No consumer monitors performed as well as the research-grade devices although in some (but not all) cases, estimates were close to criterion measurements. Thus, whilst industry-led innovation has improved the accuracy of consumer monitors, these devices are not yet equivalent to the best research-grade devices or indeed equivalent to each other. We propose independent quality standards and/or accuracy ratings for consumer devices are required.

Assessment of laboratory and daily energy expenditure estimates from consumer multi-sensor physical activity monitors

PubMed Central

Chowdhury, Enhad A.; Western, Max J.; Nightingale, Thomas E.; Peacock, Oliver J.; Thompson, Dylan

2017-01-01

Wearable physical activity monitors are growing in popularity and provide the opportunity for large numbers of the public to self-monitor physical activity behaviours. The latest generation of these devices feature multiple sensors, ostensibly similar or even superior to advanced research instruments. However, little is known about the accuracy of their energy expenditure estimates. Here, we assessed their performance against criterion measurements in both controlled laboratory conditions (simulated activities of daily living and structured exercise) and over a 24 hour period in free-living conditions. Thirty men (n = 15) and women (n = 15) wore three multi-sensor consumer monitors (Microsoft Band, Apple Watch and Fitbit Charge HR), an accelerometry-only device as a comparison (Jawbone UP24) and validated research-grade multi-sensor devices (BodyMedia Core and individually calibrated Actiheart™). During discrete laboratory activities when compared against indirect calorimetry, the Apple Watch performed similarly to criterion measures. The Fitbit Charge HR was less consistent at measurement of discrete activities, but produced similar free-living estimates to the Apple Watch. Both these devices underestimated free-living energy expenditure (-394 kcal/d and -405 kcal/d, respectively; P<0.01). The multi-sensor Microsoft Band and accelerometry-only Jawbone UP24 devices underestimated most laboratory activities and substantially underestimated free-living expenditure (-1128 kcal/d and -998 kcal/d, respectively; P<0.01). None of the consumer devices were deemed equivalent to the reference method for daily energy expenditure. For all devices, there was a tendency for negative bias with greater daily energy expenditure. No consumer monitors performed as well as the research-grade devices although in some (but not all) cases, estimates were close to criterion measurements. Thus, whilst industry-led innovation has improved the accuracy of consumer monitors, these devices are not yet equivalent to the best research-grade devices or indeed equivalent to each other. We propose independent quality standards and/or accuracy ratings for consumer devices are required. PMID:28234979

High-resolution non-contact measurement of the electrical activity of plants in situ using optical recording

PubMed Central

Zhao, Dong-Jie; Chen, Yang; Wang, Zi-Yang; Xue, Lin; Mao, Tong-Lin; Liu, Yi-Min; Wang, Zhong-Yi; Huang, Lan

2015-01-01

The limitations of conventional extracellular recording and intracellular recording make high-resolution multisite recording of plant bioelectrical activity in situ challenging. By combining a cooled charge-coupled device camera with a voltage-sensitive dye, we recorded the action potentials in the stem of Helianthus annuus and variation potentials at multiple sites simultaneously with high spatial resolution. The method of signal processing using coherence analysis was used to determine the synchronization of the selected signals. Our results provide direct visualization of the phloem, which is the distribution region of the electrical activities in the stem and leaf of H. annuus, and verify that the phloem is the main action potential transmission route in the stems of higher plants. Finally, the method of optical recording offers a unique opportunity to map the dynamic bioelectrical activity and provides an insight into the mechanisms of long-distance electrical signal transmission in higher plants. PMID:26333536

Visual enhancement of laparoscopic partial nephrectomy with 3-charge coupled device camera: assessing intraoperative tissue perfusion and vascular anatomy by visible hemoglobin spectral response.

PubMed

Crane, Nicole J; Gillern, Suzanne M; Tajkarimi, Kambiz; Levin, Ira W; Pinto, Peter A; Elster, Eric A

2010-10-01

We report the novel use of 3-charge coupled device camera technology to infer tissue oxygenation. The technique can aid surgeons to reliably differentiate vascular structures and noninvasively assess laparoscopic intraoperative changes in renal tissue perfusion during and after warm ischemia. We analyzed select digital video images from 10 laparoscopic partial nephrectomies for their individual 3-charge coupled device response. We enhanced surgical images by subtracting the red charge coupled device response from the blue response and overlaying the calculated image on the original image. Mean intensity values for regions of interest were compared and used to differentiate arterial and venous vasculature, and ischemic and nonischemic renal parenchyma. The 3-charge coupled device enhanced images clearly delineated the vessels in all cases. Arteries were indicated by an intense red color while veins were shown in blue. Differences in mean region of interest intensity values for arteries and veins were statistically significant (p >0.0001). Three-charge coupled device analysis of pre-clamp and post-clamp renal images revealed visible, dramatic color enhancement for ischemic vs nonischemic kidneys. Differences in the mean region of interest intensity values were also significant (p <0.05). We present a simple use of conventional 3-charge coupled device camera technology in a way that may provide urological surgeons with the ability to reliably distinguish vascular structures during hilar dissection, and detect and monitor changes in renal tissue perfusion during and after warm ischemia. Copyright © 2010 American Urological Association Education and Research, Inc. Published by Elsevier Inc. All rights reserved.

Energy expenditure prediction via a footwear-based physical activity monitor: Accuracy and comparison to other devices

NASA Astrophysics Data System (ADS)

Dannecker, Kathryn

2011-12-01

Accurately estimating free-living energy expenditure (EE) is important for monitoring or altering energy balance and quantifying levels of physical activity. The use of accelerometers to monitor physical activity and estimate physical activity EE is common in both research and consumer settings. Recent advances in physical activity monitors include the ability to identify specific activities (e.g. stand vs. walk) which has resulted in improved EE estimation accuracy. Recently, a multi-sensor footwear-based physical activity monitor that is capable of achieving 98% activity identification accuracy has been developed. However, no study has compared the EE estimation accuracy for this monitor and compared this accuracy to other similar devices. Purpose . To determine the accuracy of physical activity EE estimation of a footwear-based physical activity monitor that uses an embedded accelerometer and insole pressure sensors and to compare this accuracy against a variety of research and consumer physical activity monitors. Methods. Nineteen adults (10 male, 9 female), mass: 75.14 (17.1) kg, BMI: 25.07(4.6) kg/m2 (mean (SD)), completed a four hour stay in a room calorimeter. Participants wore a footwear-based physical activity monitor, as well as three physical activity monitoring devices used in research: hip-mounted Actical and Actigraph accelerometers and a multi-accelerometer IDEEA device with sensors secured to the limb and chest. In addition, participants wore two consumer devices: Philips DirectLife and Fitbit. Each individual performed a series of randomly assigned and ordered postures/activities including lying, sitting (quietly and using a computer), standing, walking, stepping, cycling, sweeping, as well as a period of self-selected activities. We developed branched (i.e. activity specific) linear regression models to estimate EE from the footwear-based device, and we used the manufacturer's software to estimate EE for all other devices. Results. The shoe-based device was not significantly different than the mean measured EE (476(20) vs. 478(18) kcal) (Mean(SE)), respectively, and had the lowest root mean square error (RMSE) by two-fold (29.6 kcal (6.19%)). The IDEEA (445(23) kcal) and DirecLlife (449(13) kcal) estimates of EE were also not different than the measured EE. The Actigraph, Fitbit and Actical devices significantly underestimated EE (339 (19) kcal, 363(18) kcal and 383(17) kcal, respectively (p<.05)). Root mean square errors were 62.1 kcal (14%), 88.2 kcal(18%), 122.2 kcal (27%), 130.1 kcal (26%), and 143.2 kcal (28%) for DirectLife, IDEEA, Actigraph, Actical and Fitbit respectively. Conclusions. The shoe based physical activity monitor was able to accurately estimate EE. The research and consumer physical activity monitors tested have a wide range of accuracy when estimating EE. Given the similar hardware of these devices, these results suggest that the algorithms used to estimate EE are primarily responsible for their accuracy, particularly the ability of the shoe-based device to estimate EE based on activity classifications.

Clinical evaluation of an inspiratory impedance threshold device during standard cardiopulmonary resuscitation in patients with out-of-hospital cardiac arrest.

PubMed

Aufderheide, Tom P; Pirrallo, Ronald G; Provo, Terry A; Lurie, Keith G

2005-04-01

To determine whether an impedance threshold device, designed to enhance circulation, would increase acute resuscitation rates for patients in cardiac arrest receiving conventional manual cardiopulmonary resuscitation. Prospective, randomized, double-blind, intention-to-treat. Out-of-hospital trial conducted in the Milwaukee, WI, emergency medical services system. Adults in cardiac arrest of presumed cardiac etiology. On arrival of advanced life support, patients were treated with standard cardiopulmonary resuscitation combined with either an active or a sham impedance threshold device. We measured safety and efficacy of the impedance threshold device; the primary end point was intensive care unit admission. Statistical analyses performed included the chi-square test and multivariate regression analysis. One hundred sixteen patients were treated with a sham impedance threshold device, and 114 patients were treated with an active impedance threshold device. Overall intensive care unit admission rates were 17% with the sham device vs. 25% in the active impedance threshold device (p = .13; odds ratio, 1.64; 95% confidence interval, 0.87, 3.10). Patients in the subgroup presenting with pulseless electrical activity had intensive care unit admission and 24-hr survival rates of 20% and 12% in sham (n = 25) vs. 52% and 30% in active impedance threshold device groups (n = 27) (p = .018, odds ratio, 4.31; 95% confidence interval, 1.28, 14.5, and p = .12, odds ratio, 3.09; 95% confidence interval, 0.74, 13.0, respectively). A post hoc analysis of patients with pulseless electrical activity at any time during the cardiac arrest revealed that intensive care unit and 24-hr survival rates were 20% and 11% in the sham (n = 56) vs. 41% and 27% in the active impedance threshold device groups (n = 49) (p = .018, odds ratio, 2.82; 95% confidence interval, 1.19, 6.67, and p = .037, odds ratio, 3.01; 95% confidence interval, 1.07, 8.96, respectively). There were no statistically significant differences in outcomes for patients presenting in ventricular fibrillation and asystole. Adverse event and complication rates were also similar. During this first clinical trial of the impedance threshold device during standard cardiopulmonary resuscitation, use of the new device more than doubled short-term survival rates in patients presenting with pulseless electrical activity. A larger clinical trial is underway to determine the potential longer term benefits of the impedance threshold device in cardiac arrest.

Watt-Level Continuous-Wave Emission from a Bifunctional Quantum Cascade Laser/Detector

PubMed Central

2017-01-01

Bifunctional active regions, capable of light generation and detection at the same wavelength, allow a straightforward realization of the integrated mid-infrared photonics for sensing applications. Here, we present a high performance bifunctional device for 8 μm capable of 1 W single facet continuous wave emission at 15 °C. Apart from the general performance benefits, this enables sensing techniques which rely on continuous wave operation, for example, heterodyne detection, to be realized within a monolithic platform and demonstrates that bifunctional operation can be realized at longer wavelength, where wavelength matching becomes increasingly difficult and that the price to be paid in terms of performance is negligible. In laser operation, the device has the same or higher efficiency compared to the best lattice-matched QCLs without same wavelength detection capability, which is only 30% below the record achieved with strained material at this wavelength. PMID:28540324

Magnetic Field Triggered Multicycle Damage Sensing and Self Healing.

PubMed

Ahmed, Anansa S; Ramanujan, R V

2015-09-08

Multifunctional materials inspired by biological structures have attracted great interest, e.g. for wearable/ flexible "skin" and smart coatings. A current challenge in this area is to develop an artificial material which mimics biological skin by simultaneously displaying color change on damage as well as self healing of the damaged region. Here we report, for the first time, the development of a damage sensing and self healing magnet-polymer composite (Magpol), which actively responds to an external magnetic field. We incorporated reversible sensing using mechanochromic molecules in a shape memory thermoplastic matrix. Exposure to an alternating magnetic field (AMF) triggers shape recovery and facilitates damage repair. Magpol exhibited a linear strain response upto 150% strain and complete recovery after healing. We have demonstrated the use of this concept in a reusable biomedical device i.e., coated guidewires. Our findings offer a new synergistic method to bestow multifunctionality for applications ranging from medical device coatings to adaptive wing structures.

Split Bull's eye shaped aluminum antenna for plasmon-enhanced nanometer scale germanium photodetector.

PubMed

Ren, Fang-Fang; Ang, Kah-Wee; Ye, Jiandong; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee

2011-03-09

Bull's eye antennas are capable of efficiently collecting and concentrating optical signals into an ultrasmall area, offering an excellent solution to break the bottleneck between speed and photoresponse in subwavelength photodetectors. Here, we exploit the idea of split bull's eye antenna for a nanometer germanium photodetector operating at a standard communication wavelength of 1310 nm. The nontraditional plasmonic metal aluminum has been implemented in the resonant antenna structure fabricated by standard complementary metal-oxide-semiconductor (CMOS) processing. A significant enhancement in photoresponse could be achieved over the conventional bull's eye scheme due to an increased optical near-field in the active region. Moreover, with this novel antenna design the effective grating area could be significantly reduced without sacrificing device performance. This work paves the way for the future development of low-cost, high-density, and high-speed CMOS-compatible germanium-based optoelectronic devices.

Development of the sonic pump levitation

NASA Technical Reports Server (NTRS)

Dunn, S. A.

1984-01-01

A prototype levitating/positioning device termed the Sonic Pump Levitator was designed, built and successfully tested in full gravity and in the reduced gravity of the parabolic flight regime of the KC-135. Positioning is achieved by timely and appropriate application of gas momentum from one or more of six sonic pumps. The sonic pumps, which are arranged orthogonally in opposed pairs about the levitation region, are activated by an electro-optical, computer controlled, feedback system. The sonic pump is a transducer which is capable of converting sound energy into a directed flow of gas. It consists of a loudspeaker whose face is sealed by a closure perforated by one or more orifices. The diaphragm of the loudspeaker is the only moving part of the sonic pump, no valves being needed. This very low inertia electromechanical device was developed to provide the short response time necessary to keep pace with the demands of computerized position keeping.

Integrated Nanoscale Antenna-LED for On-Chip Optical Communication

NASA Astrophysics Data System (ADS)

Fortuna, Seth

Traditional semiconductor light emitting diodes (LEDs) have low modulation speed because of long spontaneous emission lifetime. Spontaneous emission in semiconductors (and indeed most light emitters) is an inherently slow process owing to the size mismatch between the dipole length of the optical dipole oscillators responsible for light emission and the wavelength of the emitted light. More simply stated: semiconductors behave as a poor antenna for its own light emission. By coupling a semiconductor at the nanoscale to an external antenna, the spontaneous emission rate can be dramatically increased alluding to the exciting possibility of an antenna-LED that can be directly modulated faster than the laser. Such an antenna-LED is well-suited as a light source for on-chip optical communication where small size, fast speed, and high efficiency are needed to achieve the promised benefit of reduced power consumption of on-chip optical interconnect links compared with less efficient electrical interconnect links. Despite the promise of the antenna-LED, significant challenges remain to implement an antenna-coupled device in a monolithically integrated manner. Notably, most demonstrations of antenna-enhanced spontaneous emission have relied upon optical pumping of the light emitting material which is useful for fundamental studies; however, an electrical injection scheme is required for practical implementation of an antenna-LED. In this dissertation, demonstration of an electrically-injected III-V antenna-LED is reported: an important milestone toward on-chip optical interconnects. In the first part of this dissertation, the general design principles of enhancing the spontaneous emission rate of a semiconductor with an optical antenna is discussed. The cavity-backed slot antenna is shown to be uniquely suited for an electrically-injected antenna-LED because of large spontaneous emission enhancement, simple fabrication, and directional emission of light. The design, fabrication, and experimental results of the electrically-injected III-V antenna-LED is then presented. Clear evidence of antenna-enhanced electroluminescence is demonstrated including a large increase in the emitted light intensity with respect to an LED without antenna. Furthermore, it is shown that the active region emission wavelength is influenced by the antenna resonance and the emitted light is polarized; consistent with the expected behavior of the cavity-backed slot antenna. An antenna-LED consisting of a InGaAs quantum well active region is shown to have a large 200-fold enhancement of the spontaneous emission rate. In the last half of this dissertation, the performance of the antenna-LED is discussed. Remarkably, despite the high III-V surface recombination velocity, it is shown that an efficient antenna-LED consisting of an InGaAs active region is possible with an antenna-enhanced spontaneous emission rate. This is true provided the active region surface quality is preserved through the entire device process. A novel technique to preserve and clean InGaAs surfaces is reported. Finally, a rate-equation analysis shows that the optimized antenna-LED with cavity-backed slot antenna is fundamentally capable of achieving greater than 100 GHz direct modulation rate at high efficiency thus showing that an antenna-LED faster than the laser is achievable with this device architecture.

1.55 um aluminum gallium indium arsenide strained MQW laser diodes

NASA Astrophysics Data System (ADS)

Yang, Chi

At the 1.55 mum eye-safe, telecommunications operating wavelength, semiconductor diode lasers must have low threshold currents and operate at high temperatures without thermoelectric coolers. Existing diode lasers in this wavelength range based on the GaInAsP/InP materials system are very sensitive to operating temperature. To obtain high temperature, high power 1.55 mum semiconductor diode lasers, the AlGaInAs/InP materials system with strained quantum well (QW) active regions was investigated with the goal of improving temperature performance. A set of lasers with active regions consisting of different numbers of QWs (2 to 4) and different QW strains (1.2% and 1.6%) were designed taking into account the quaternary alloy bandgap of AlGaInAs, the effect of strain on the bandgap, and the quantum size effects within the QW. The active region growth temperature was optimized using photoluminescence intensity. The wafers were first processed into broad-area lasers and measured under pulsed injection. The characteristic threshold current temperature, T0, for all AlGaInAs lasers was higher (60-70 K) than for GaInAsP lasers. No strong dependence of temperature parameters on strain was observed, while properties varied significantly with the number of QWs. With more QWs, both internal efficiency and T0 increases, but internal loss increases, reducing the characteristic temperature of the differential efficiency T1. The results show that uncooled laser operation at 1.55 mum is very promising with strained AlGaInAs QWs. Ridge waveguide devices demonstrated low threshold and high output power as well as good temperature performance under continuous wave operation. Devices with different ridge heights were fabricated from one wafer and their performance was compared. It was found that current spreading was significant in these devices and a simple current density-versus-applied voltage analysis was developed to determine the spreading factor. The analysis shows that the current spreading was not effectively limited until etching went below the doped cladding layer. A recombination coefficient analysis was performed to investigate the effect of strain on Auger recombination predicted by theory. An indirect method to infer both the nonradiative recombination coefficient and the Auger recombination coefficient was initially used. The measured values of the recombination coefficients were consistent with theoretical predictions and measurements based on other material systems. The Auger recombination was lower than expected, indicating that Auger recombination is reduced in these strained QWs. To understand the carrier dynamics, impedance measurements were carried out for the first time in AlGaInAs strained QW lasers. A small-signal, sub-threshold equivalent circuit model was derived from the laser rate equations to model the measured laser impedance. Several characteristic carrier lifetimes were obtained directly from these electrical impedance measurements. From the temperature dependence of the QW escape time, it was found that hole rather than electron leakage is dominant in the AlGaInAs system due to the relatively low valence band offset. This may explain why the improvement of T0 in AlGaInAs QW 1.55 mum active regions is limited.

Endurance degradation and lifetime model of p-channel floating gate flash memory device with 2T structure

NASA Astrophysics Data System (ADS)

Wei, Jiaxing; Liu, Siyang; Liu, Xiaoqiang; Sun, Weifeng; Liu, Yuwei; Liu, Xiaohong; Hou, Bo

2017-08-01

The endurance degradation mechanisms of p-channel floating gate flash memory device with two-transistor (2T) structure are investigated in detail in this work. With the help of charge pumping (CP) measurements and Sentaurus TCAD simulations, the damages in the drain overlap region along the tunnel oxide interface caused by band-to-band (BTB) tunneling programming and the damages in the channel region resulted from Fowler-Nordheim (FN) tunneling erasure are verified respectively. Furthermore, the lifetime model of endurance characteristic is extracted, which can extrapolate the endurance degradation tendency and predict the lifetime of the device.

Role of out-of-plane dielectric thickness in the electrostatic simulation of atomically thin lateral junctions

NASA Astrophysics Data System (ADS)

Nipane, Ankur; Zhang, Yefei; Teherani, James T.

2018-06-01

Two-dimensional materials enable novel electronic and optoelectronic devices due to their unique properties. Device modeling plays a fundamental role in developing these novel devices by providing insights into the underlying physics. In this work, we present the dramatic impact of the simulated out-of-plane dielectric thickness on the electrostatics of lateral junctions formed from atomically thin materials. We show that unlike bulk junctions, the boundary conditions on the edges of the simulation region significantly affect the electrostatics of two-dimensional (2D) lateral junctions by modifying the out-of-plane electric field. We also present an intuitive understanding of the Neumann boundary conditions imposed on the boundaries of the simulation region. The Neumann boundary conditions alter the intended simulation by generating reflections of the device across the boundaries. Finally, we derive a minimal dielectric thickness for a symmetrically doped 2D lateral p-n junction, above which the out-of-plane simulation region boundaries minimally affect the simulated electric field, electrostatic potential, and depletion width of the junction.

Detection of critical cerebral desaturation thresholds by three regional oximeters during hypoxia: a pilot study in healthy volunteers.

PubMed

Tomlin, Kerry L; Neitenbach, Anna-Maria; Borg, Ulf

2017-01-13

Regional oximetry is increasingly used to monitor post-extraction oxygen status of the brain during surgical procedures where hemodynamic fluctuations are expected. Particularly in cardiac surgery, clinicians employ an interventional algorithm to restore baseline regional oxygen saturation (rSO 2 ) when a patient reaches a critical desaturation threshold. Evidence suggests that monitoring cardiac surgery patients and intervening to maintain rSO 2 can improve postoperative outcomes; however, evidence generated with one manufacturer's device may not be applicable to others. We hypothesized that regional oximeters from different manufacturers respond uniquely to changes in oxygen saturation in healthy volunteers. Three devices were tested: INVOS™ 5100C (Medtronic), EQUANOX™ 7600 (Nonin), and FORE-SIGHT™ (CASMED) monitors. We divided ten healthy subjects into two cohorts wearing a single sensor each from INVOS and EQUANOX (n = 6), or INVOS and FORE-SIGHT (n = 4). We induced and reversed hypoxia by adjusting the fraction of inspired oxygen. We calculated the magnitude of absolute rSO 2 change and rate of rSO 2 change during desaturation and resaturation, and determined if and when each device reached a critical interventional rSO 2 threshold during hypoxia. All devices responded to changes in oxygen directionally as expected. The median absolute rSO 2 change and the rate of rSO 2 change was significantly greater during desaturation and resaturation for INVOS compared with EQUANOX (P = 0.04). A similar but nonsignificant trend was observed for INVOS compared with FORE-SIGHT; our study was underpowered to definitively conclude there was no difference. A 10% relative decrease in rSO 2 during desaturation was detected by all three devices across the ten subjects. INVOS met a 20% relative decrease threshold in all subjects of both cohorts, compared to 1 with EQUANOX and 2 with FORE-SIGHT. Neither EQUANOX nor FORE-SIGHT reached a 50% absolute rSO 2 threshold compared with 4 and 3 subjects in each cohort with INVOS, respectively. Significant differences exist between the devices in how they respond to changes in oxygen saturation in healthy volunteers. We suggest caution when applying evidence generated with one manufacturer's device to all devices.

Activated-Carbon Sorbent With Integral Heat-Transfer Device

NASA Technical Reports Server (NTRS)

Jones, Jack A.; Yavrouian, Andre

1996-01-01

Prototype adsorption device used, for example, in adsorption heat pump, to store natural gas to power automobile, or to separate components of fluid mixtures. Device includes activated carbon held together by binder and molded into finned heat-transfer device providing rapid heating or cooling to enable rapid adsorption or desorption of fluids. Concepts of design and fabrication of device equally valid for such other highly thermally conductive devices as copper-finned tubes, and for such other high-surface-area sorbents as zeolites or silicates.

Blade vortex interaction noise reduction techniques for a rotorcraft

NASA Technical Reports Server (NTRS)

Charles, Bruce D. (Inventor); Hassan, Ahmed A. (Inventor); Tadghighi, Hormoz (Inventor); JanakiRam, Ram D. (Inventor); Sankar, Lakshmi N. (Inventor)

1996-01-01

An active control device for reducing blade-vortex interactions (BVI) noise generated by a rotorcraft, such as a helicopter, comprises a trailing edge flap located near the tip of each of the rotorcraft's rotor blades. The flap may be actuated in any conventional way, and is scheduled to be actuated to a deflected position during rotation of the rotor blade through predetermined regions of the rotor azimuth, and is further scheduled to be actuated to a retracted position through the remaining regions of the rotor azimuth. Through the careful azimuth-dependent deployment and retraction of the flap over the rotor disk, blade tip vortices which are the primary source for BVI noise are (a) made weaker and (b) pushed farther away from the rotor disk (that is, larger blade-vortex separation distances are achieved).

Blade vortex interaction noise reduction techniques for a rotorcraft

NASA Technical Reports Server (NTRS)

Charles, Bruce D. (Inventor); JanakiRam, Ram D. (Inventor); Hassan, Ahmed A. (Inventor); Tadghighi, Hormoz (Inventor); Sankar, Lakshmi N. (Inventor)

1998-01-01

An active control device for reducing blade-vortex interactions (BVI) noise generated by a rotorcraft, such as a helicopter, comprises a trailing edge flap located near the tip of each of the rotorcraft's rotor blades. The flap may be actuated in any conventional way, and is scheduled to be actuated to a deflected position during rotation of the rotor blade through predetermined regions of the rotor azimuth, and is further scheduled to be actuated to a retracted position through the remaining regions of the rotor azimuth. Through the careful azimuth-dependent deployment and retraction of the flap over the rotor disk, blade tip vortices which are the primary source for BVI noise are (a) made weaker and (b) pushed farther away from the rotor disk (that is, larger blade-vortex separation distances are achieved).

Light emitting ceramic device

DOEpatents

Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

2010-05-18

A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

A SiC LDMOS with electric field modulation by a step compound drift region

NASA Astrophysics Data System (ADS)

Bao, Meng-tian; Wang, Ying; Yu, Cheng-hao; Cao, Fei

2018-07-01

In this paper, we propose a SiC LDMOS structure with a step compound drift region (SC-LDMOS). The proposed device has a compound drift region which consists of an n-type top layer, a step p-type middle layer and an n-type bottom layer. The step p-type middle layer can introduce two new electric field peaks and uniform the distribution of the electric field in the n-type top layer, which can modulate the surface electric field and improve the breakdown voltage of the proposed structure. In addition, the n-type bottom layer is applied under the heavy doping p-type middle layer，which contributes to realize the charge balance. Furthermore, it can also increase the doping concentration of the n-type top layer, which can decrease the on resistance of the proposed device. As a simulated result, the proposed device obtain a high BV of 976 V and a low Rsp,on of 7.74 mΩ·cm2. Compared with the conventional single REUSRF LDMOS and triple RESURF LDMOS, BV of proposed device is enhanced by 42.5% and 14.7%, respectively and Rsp,on is reduced by 37.3% and 30.9%, respectively. Meanwhile, the switching delays of the proposed device are significantly shorter than the conventional triple RESURF LDMOS.

An Automatic Occlusion Device for Remote Control of Tumor Tissue Ischemia

PubMed Central

El-Dahdah, Hamid; Wang, Bei; He, Guanglong; Xu, Ronald X.

2015-01-01

We developed an automatic occlusion device for remote control of tumor tissue ischemia. The device consists of a flexible cannula encasing a shape memory alloy wire with its distal end connected to surgical suture. Regional tissue occlusion was tested on both the benchtop and the animal models. In the benchtop test, the occlusion device introduced quantitative and reproducible changes of blood flow in a tissue simulating phantom embedding a vessel simulator. In the animal test, the device generated a cyclic pattern of reversible ischemia in the right hinder leg tissue of a black male C57BL/6 mouse. We also developed a multimodal detector that integrates near infrared spectroscopy and electron paramagnetic resonance spectroscopy for continuous monitoring of tumor tissue oxygenation, blood content, and oxygen tension changes. The multimodal detector was tested on a cancer xenograft nude mouse undergoing reversible tumor ischemia. The automatic occlusion device and the multi-modal detector can be potentially integrated for closed-loop feedback control of tumor tissue ischemia. Such an integrated occlusion device may be used in multiple clinical applications such as regional hypoperfusion control in tumor resection surgeries and thermal ablation processes. In addition, the proposed occlusion device can also be used as a research tool to understand tumor oxygen transport and hemodynamic characteristics. PMID:20082532

Nasal deposition and clearance in man: comparison of a bidirectional powder device and a traditional liquid spray pump.

PubMed

Djupesland, Per Gisle; Skretting, Arne

2012-10-01

Delivery of powder formulations to the nose is an attractive alternative for many drugs and vaccines. This study compared the regional nasal deposition and clearance patterns of lactose powder delivered by the OptiNose powder device (Opt-Powder; OptiNose US Inc., Yardley, PA, USA) to that of liquid aerosol administered via a traditional hand-actuated liquid spray pump (Rexam SP270, Rexam Pharma, France). The study was an open-label, crossover design in seven healthy subjects (five females, two males). The regional nasal deposition and clearance patterns of the Opt-Powder device were compared to a traditional liquid spray pump by dynamic gamma camera imaging after administration of either (99m)Tc-labeled lactose powder or liquid (99m)Tc- diethelyne triamine pentaacetic acid-aerosol. The gamma camera images were scaled and aligned with sagittal magnetic resonance images to identify nasal regions. Possible deposition of radiolabeled material in the lungs following both methods of delivery was also evaluated. Both powder and spray were distributed to all of the nasal regions. The Opt-Powder device, however, achieved significantly larger initial deposition in the upper and middle posterior regions of the nose than spray (upper posterior region; Opt-Powder 18.3% ± 11.5 vs. Spray 2.4% ± 1.8, p<0.02; sum of upper and middle posterior regions; Opt-Powder 53.5% ± 18.5 vs. Spray 15.7% ± 13.8, p<0.02). The summed initial deposition to the lower anterior and posterior regions for spray was three times higher compared to Opt-Powder (Opt-Powder 17.4% ± 24.5 vs. Spray 59.4% ± 18.2, p<0.04). OptiNose powder delivery resulted in more rapid overall nasal clearance. No lung deposition was observed. The initial deposition following powder delivery was significantly larger in the ciliated mucosa of the upper and posterior nasal regions, whereas less was deposited in the lower regions. Overall nasal clearance of powder was slower initially, but due to retention in anterior nonciliated regions the overall nasal clearance after spray was slower.

Adhesion and formation of microbial biofilms in complex microfluidic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Aloke; Karig, David K; Neethirajan, Suresh

2012-01-01

Shewanella oneidensis is a metal reducing bacterium, which is of interest for bioremediation and clean energy applications. S. oneidensis biofilms play a critical role in several situations such as in microbial energy harvesting devices. Here, we use a microfluidic device to quantify the effects of hydrodynamics on the biofilm morphology of S. oneidensis. For different rates of fluid flow through a complex microfluidic device, we studied the spatiotemporal dynamics of biofilms, and we quantified several morphological features such as spatial distribution, cluster formation and surface coverage. We found that hydrodynamics resulted in significant differences in biofilm dynamics. The baffles inmore » the device created regions of low and high flow in the same device. At higher flow rates, a nonuniform biofilm develops, due to unequal advection in different regions of the microchannel. However, at lower flow rates, a more uniform biofilm evolved. This depicts competition between adhesion events, growth and fluid advection. Atomic force microscopy (AFM) revealed that higher production of extra-cellular polymeric substances (EPS) occurred at higher flow velocities.« less

Preventing hypothermia: comparison of current devices used by the US Army in an in vitro warmed fluid model.

PubMed

Allen, Paul B; Salyer, Steven W; Dubick, Michael A; Holcomb, John B; Blackbourne, Lorne H

2010-07-01

The purpose of this study was to develop an in vitro torso model constructed with fluid bags and to determine whether this model could be used to differentiate between the heat prevention performance of devices with active chemical or radiant forced-air heating systems compared with passive heat loss prevention devices. We tested three active (Hypothermia Prevention Management Kit [HPMK], Ready-Heat, and Bair Hugger) and five passive (wool, space blankets, Blizzard blankets, human remains pouch, and Hot Pocket) hypothermia prevention products. Active warming devices included products with chemically or electrically heated systems. Both groups were tested on a fluid model warmed to 37 degrees C versus a control with no warming device. Core temperatures were recorded every 5 minutes for 120 minutes in total. Products that prevent heat loss with an actively heated element performed better than most passive prevention methods. The original HPMK achieved and maintained significantly higher temperatures than all other methods and the controls at 120 minutes (p < 0.05). None of the devices with an actively heated element achieved the sustained 44 degrees C that could damage human tissue if left in place for 6 hours. The best passive methods of heat loss prevention were the Hot Pocket and Blizzard blanket, which performed the same as two of the three active heating methods tested at 120 minutes. Our in vitro fluid bag "torso" model seemed sensitive to detect heat loss in the evaluation of several active or passive warming devices. All active and most passive devices were better than wool blankets. Under conditions near room temperature, passive warming methods (Blizzard blanket or the Hot Pocket) were as effective as active warming devices other than the original HPMK. Further studies are necessary to determine how these data can translate to field conditions in preventing heat loss in combat casualties.

Evaluating the Consistency of Current Mainstream Wearable Devices in Health Monitoring: A Comparison Under Free-Living Conditions

PubMed Central

Wen, Dong; Zhang, Xingting; Liu, Xingyu

2017-01-01

Background Wearable devices are gaining increasing market attention; however, the monitoring accuracy and consistency of the devices remains unknown. Objective The purpose of this study was to assess the consistency of the monitoring measurements of the latest wearable devices in the state of normal activities to provide advice to the industry and support to consumers in making purchasing choices. Methods Ten pieces of representative wearable devices (2 smart watches, 4 smart bracelets of Chinese brands or foreign brands, and 4 mobile phone apps) were selected, and 5 subjects were employed to simultaneously use all the devices and the apps. From these devices, intact health monitoring data were acquired for 5 consecutive days and analyzed on the degree of differences and the relationships of the monitoring measurements ​​by the different devices. Results The daily measurements by the different devices fluctuated greatly, and the coefficient of variation (CV) fluctuated in the range of 2-38% for the number of steps, 5-30% for distance, 19-112% for activity duration, .1-17% for total energy expenditure (EE), 22-100% for activity EE, 2-44% for sleep duration, and 35-117% for deep sleep duration. After integrating the measurement data of 25 days among the devices, the measurements of the number of steps (intraclass correlation coefficient, ICC=.89) and distance (ICC=.84) displayed excellent consistencies, followed by those of activity duration (ICC=.59) and the total EE (ICC=.59) and activity EE (ICC=.57). However, the measurements for sleep duration (ICC=.30) and deep sleep duration (ICC=.27) were poor. For most devices, there was a strong correlation between the number of steps and distance measurements (R2>.95), and for some devices, there was a strong correlation between activity duration measurements and EE measurements (R2>.7). A strong correlation was observed in the measurements of steps, distance and EE from smart watches and mobile phones of the same brand, Apple or Samsung (r>.88). Conclusions Although wearable devices are developing rapidly, the current mainstream devices are only reliable in measuring the number of steps and distance, which can be used as health assessment indicators. However, the measurement consistencies of activity duration, EE, sleep quality, and so on, are still inadequate, which require further investigation and improved algorithms. PMID:28270382

Electrochromic devices

DOEpatents

Allemand, Pierre M.; Grimes, Randall F.; Ingle, Andrew R.; Cronin, John P.; Kennedy, Steve R.; Agrawal, Anoop; Boulton, Jonathan M.

2001-01-01

An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

Development of high damage threshold multilayer thin film beam combiner for laser application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nand, Mangla, E-mail: mnand@rrcat.gov.in; Babita,; Jena, S.

2016-05-23

A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm{sup 2} at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

Development of high damage threshold multilayer thin film beam combiner for laser application

NASA Astrophysics Data System (ADS)

Nand, Mangla; Babita, Jena, S.; Tokas, R. B.; Rajput, P.; Mukharjee, C.; Thakur, S.; Jha, S. N.; Sahoo, N. K.

2016-05-01

A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm2 at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

A cardiac implantable device infection by Raoultella planticola in an immunocompromized patient.

PubMed

Adjodah, Chandra; D'Ivernois, Chistophe; Leyssene, David; Berneau, Jean-Baptiste; Hemery, Yann

2017-02-01

Introduction. Infection of cardiac implantable electronic devices is a severe condition associated with high mortality, particularly in patients who are dependent upon heart-pacing devices. Staphylococci are found in 70 % of reported cases. Case presentation. We report the case of a cardiac-pacemaker infection in a 79-year-old man, cumulating a history of rheumatoid arthritis treated by corticosteroids and methotrexate by a recently identified micro-organism: Raoultella planticola . He presented local signs of infection on his VVI pacemaker implantation site and underwent urgent pocket device replacement under cefamandole antibioprophylaxis. On incision thick pus oozed out. It was necessary to perform a complete hardware extraction comprising the pulse generator and the ancient lead. Pus was inoculated into aerobic and anaerobic culture vials and Gram staining unveiled Gram-negative rods. Microbiology analysis identified the organism as R. planticola. A new pacing device was inserted on the contrlateral pectoral region. Ciprofloxacin enabled full recovery. A literature review concerning this pathogen revealed that it is involved in severe infections such as bloodstream infections, peritonitis, cellulitis, pneumonia and lung abscesses, and urinary tract infections. In these case reports, underlying co-morbidities were identified such as solid active neoplasia, recent chemotherapy, corticosteroids, solid-organ-recipient patients and recent open surgery. Conclusion. R. planticola is a serious emerging pathogen and contributes to the burden of various infectious conditions. Its pathogenicity and occurrence should be known by clinicians and a high level of awareness is necessary to precisely identify it provide the correct antibiotic regimen.

EEG-based Brain-Computer Interface to support post-stroke motor rehabilitation of the upper limb.

PubMed

Cincotti, F; Pichiorri, F; Aricò, P; Aloise, F; Leotta, F; de Vico Fallani, F; Millán, J del R; Molinari, M; Mattia, D

2012-01-01

Brain-Computer Interfaces (BCIs) process brain activity in real time, and mediate non-muscular interaction between and individual and the environment. The subserving algorithms can be used to provide a quantitative measurement of physiological or pathological cognitive processes - such as Motor Imagery (MI) - and feed it back the user. In this paper we propose the clinical application of a BCI-based rehabilitation device, to promote motor recovery after stroke. The BCI-based device and the therapy exploiting its use follow the same principles that drive classical neuromotor rehabilitation, and (i) provides the physical therapist with a monitoring instrument, to assess the patient's participation in the rehabilitative cognitive exercise; (ii) assists the patient in the practice of MI. The device was installed in the ward of a rehabilitation hospital and a group of 29 patients were involved in its testing. Among them, eight have already undergone a one-month training with the device, as an add-on to the regular therapy. An improved system, which includes analysis of Electromyographic (EMG) patterns and Functional Electrical Stimulation (FES) of the arm muscles, is also under clinical evaluation. We found that the rehabilitation exercise based on BCI-mediated neurofeedback mechanisms enables a better engagement of motor areas with respect to motor imagery alone and thus it can promote neuroplasticity in brain regions affected by a cerebrovascular accident. Preliminary results also suggest that the functional outcome of motor rehabilitation may be improved by the use of the proposed device.

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device.

PubMed

Groenendijk, Dirk J; Buscema, Michele; Steele, Gary A; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf; van der Zant, Herre S J; Castellanos-Gomez, Andres

2014-10-08

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms, the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of 2 larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by, for example, an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizable thermal gradient upon illumination.

Effect of strained Ge-based NMOSFETs with Ge0.93Si0.07 stressors on device layout

NASA Astrophysics Data System (ADS)

Hsu, Hung-Wen; Lee, Chang-Chun

2017-12-01

This research proposes a germanium (Ge)-based n-channel MOSFET with Ge0.93Si0.07 S/D stressor. A simulation technique is utilized to understand the layout effect of shallow trench isolation (STI) length, gate width, dummy active of diffusion (OD) length, and extended poly width on stress distribution in a channel region. Stress distribution in a channel region was simulated by ANSYS software based on finite element analysis. Furthermore, carrier mobility gain was evaluated by a second-order piezoresistance model. The piezoresistance coefficient of Ge nMOSFET varies from that of Si nMOSFET. The piezoresistance coefficient shows that longitudinal and transverse stresses are the dominant factors affecting the change in electron mobility in the channel region. For Ge-based nMOSFET, longitudinal stress tends to be tensile, whereas transverse stress tends to be compressive. Stress along channel length becomes more tensile when STI length decreases. By contrast, stress along the channel width becomes more compressive when gate width or extended poly width decreases. Electron mobility in Ge-based nMOSFET could be enhanced under the aforementioned conditions. The enhanced electron mobility becomes more significant as the device combines with a contact etching stop layer stressor. Moreover, the mobility can be improved by changing the STI length, gate width, dummy OD length, or extended poly width. This investigation systematically analyzed the relationship between layout factor and stress distribution.

Medical devices and the Middle East: market, regulation, and reimbursement in Gulf Cooperation Council states.

PubMed

Howard, Jason J

2014-01-01

With some of the richest economies in the world, the Gulf Cooperation Council (GCC) is undergoing rapid growth not only in its population but also in health care expenditure. Despite the GCC's abundance of hydrocarbon-based wealth, the drivers of the medical device industry in the GCC are still in flux, with gains yet to be made in areas of infrastructure, regulation, and reimbursement. However, the regional disease burden, expanding health insurance penetration, increasing privatization, and a desire to attract skilled expatriate health care providers have led to favorable conditions for the medical device market in the GCC. The purpose of this article is to investigate the current state of the GCC medical device industry, with respect to market, regulation, and reimbursement, paying special attention to the three largest medical device markets: Saudi Arabia, the United Arab Emirates, and Qatar. The GCC would seem to represent fertile ground for the development of medical technologies, especially those in line with the regional health priorities of the respective member states.

High-performance hybrid white organic light-emitting devices without interlayer between fluorescent and phosphorescent emissive regions.

PubMed

Sun, Ning; Wang, Qi; Zhao, Yongbiao; Chen, Yonghua; Yang, Dezhi; Zhao, Fangchao; Chen, Jiangshan; Ma, Dongge

2014-03-12

By using mixed hosts with bipolar transport properties for blue emissive layers, a novel phosphorescence/fluorescence hybrid white OLED without using an interlayer between the fluorescent and phosphorescent regions is demonstrated. The peak EQE of the device is 19.0% and remains as high as 17.0% at the practical brightness of 1000 cd m(-2) . © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Adaptive sampler

DOEpatents

Watson, B.L.; Aeby, I.

1980-08-26

An adaptive data compression device for compressing data is described. The device has a frequency content, including a plurality of digital filters for analyzing the content of the data over a plurality of frequency regions, a memory, and a control logic circuit for generating a variable rate memory clock corresponding to the analyzed frequency content of the data in the frequency region and for clocking the data into the memory in response to the variable rate memory clock.

Electronic properties of hybrid monolayer-multilayer MoS2 nanostructured materials

NASA Astrophysics Data System (ADS)

Mlinar, Vladan

2017-12-01

The remarkable, layer-dependent properties of molybdenum disulphide (MoS2), such as an appropriately small and sizable bandgap or interplay between spin and the valley degrees of freedom, make it an attractive candidate for photodetectors, electrominescent devices, valleytronic devices, etc. Using nanostructuring to manipulate the size in lateral direction or number of layers of MoS2, we are opening a new playground for exploring and tuning properties of such systems. Here, we theoretically study the electronic properties of nanostructured MoS2 systems consisting of monolayer and multilayer MoS2 regions. In our analysis we consider hybrid systems in which monolayer region is surrounded by multilayer region and vice versa. We show how energy spectra and localization of carriers are influenced by the size and shape of the regions in lateral direction, number of MoS2 layers in the multilayer region, and the edge structure. Finally, we demonstrate how to control localization of carriers in these hybrid systems, which could make them appealing candidates for optoelectronic devices. Our findings are extracted from a tight-binding model that includes non-orthogonal sp3d5 orbitals, nearest-neighbor hopping matrix elements, and spin-orbit coupling.

Improving breakdown voltage performance of SOI power device with folded drift region

NASA Astrophysics Data System (ADS)

Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

2016-07-01

A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

Effect of Capacitive Radiofrequency on the Fibrosis of Patients with Cellulite

PubMed Central

Valentim da Silva, Rodrigo Marcel; Barichello, Priscila Arend; Medeiros, Melyssa Lima; de Mendonça, Waléria Cristina Miranda; Dantas, Jung Siung Camel; Ronzio, Oscar Ariel; Froes, Patricia Meyer

2013-01-01

Background. Cellulite is a type of lipodystrophy that develops primarily from an alteration in blood circulation or of the lymphatic system that causes structural changes in subcutaneous adipose tissue, collagen, and adjacent proteoglycans. The radiofrequency devices used for cutaneous applications have shown different physiological treatment effects, but there is controversy about the suitable parameters for this type of treatment. Objectives. The aim of this study was to evaluate the effects of low-temperature radiofrequency to confirm the thinning of the collagen tissue and interlobular septa and consequent improvement of cellulite. Methods. A sample of eight women was used to collect ultrasonographic data with a 12 MHz probe that measured collagen fiber thickness. The Vip Electromedicina (Argentina) device, frequency of 0.55 MHz and active electrode 3.5 cm in diameter (area = 9.61 cm2), was applied to a 10 cm2 region of the gluteal region for 2 minutes per area of active electrode, during 10 biweekly sessions. Results. The Wilcoxon matched paired test was applied using GraphPad InStat 3.01 for Win95-NT software. Pre- and posttreatment mean collagen fiber thickness showed a 24.66% reduction from 1.01 to 0.67 mm. Statistical analysis using the Wilcoxon matched paired test obtained a significant two-tailed P value of 0.0391. Conclusion. It was concluded that the use of more comfortable temperatures favored a reduction in fibrous septum thickness and consequent cellulite improvement, evidenced by the lower degree of severity and decrease in interlobular septal thickness. PMID:24223586

Identification of carbonates as additives in pressure-sensitive adhesive tape substrate with Fourier transform infrared spectroscopy (FTIR) and its application in three explosive cases.

PubMed

Lv, Jungang; Feng, Jimin; Zhang, Wen; Shi, Rongguang; Liu, Yong; Wang, Zhaohong; Zhao, Meng

2013-01-01

Pressure-sensitive tape is often used to bind explosive devices. It can become important trace evidence in many cases. Three types of calcium carbonate (heavy, light, and active CaCO(3)), which were widely used as additives in pressure-sensitive tape substrate, were analyzed with Fourier transform infrared spectroscopy (FTIR) in this study. A Spectrum GX 2000 system with a diamond anvil cell and a deuterated triglycine sulfate detector was employed for IR observation. Background was subtracted for every measurement, and triplicate tests were performed. Differences in positions of main peaks and the corresponding functional groups were investigated. Heavy CaCO(3) could be identified from the two absorptions near 873 and 855/cm, while light CaCO(3) only has one peak near 873/cm because of the low content of aragonite. Active CaCO(3) could be identified from the absorptions in the 2800-2900/cm region because of the existence of organic compounds. Tiny but indicative changes in the 878-853/cm region were found in the spectra of CaCO(3) with different content of aragonite and calcite. CaCO(3) in pressure-sensitive tape, which cannot be differentiated by scanning electron microscope/energy dispersive X-ray spectrometer and thermal analysis, can be easily identified using FTIR. The findings were successfully applied to three specific explosive cases and would be helpful in finding the possible source of explosive devices in future cases. © 2012 American Academy of Forensic Sciences.

A functional protein retention and release multilayer with high stability

NASA Astrophysics Data System (ADS)

Nie, Kun; An, Qi; Zhang, Yihe

2016-04-01

Effective and robust interfacial protein retention lies at the heart of the fabrication of protein-based functional interfaces, which is potentially applicable in catalysis, medical therapy, antifouling, and smart devices, but remains challenging due to the sensitive nature of proteins. This study reports a general protein retention strategy to spatial-temporally confine various types of proteins at interfacial regions. The proteins were preserved in mesoporous silica nanoparticles embedded in covalently woven multilayers. It is worth noting that the protein retention strategy effectively preserves the catalytic capabilities of the proteins, and the multilayer structure is robust enough to withstand the bubbling catalytic reactions and could be repeatedly used due to conservation of proteins. The spatiotemporal retention of proteins could be adjusted by varying the number of capping layers. Furthermore, we demonstrate that the protein-loaded interfacial layers could not only be used to construct catalytic-active interfaces, but also be integrated as the power-generating unit to propel a macroscopic floating device.Effective and robust interfacial protein retention lies at the heart of the fabrication of protein-based functional interfaces, which is potentially applicable in catalysis, medical therapy, antifouling, and smart devices, but remains challenging due to the sensitive nature of proteins. This study reports a general protein retention strategy to spatial-temporally confine various types of proteins at interfacial regions. The proteins were preserved in mesoporous silica nanoparticles embedded in covalently woven multilayers. It is worth noting that the protein retention strategy effectively preserves the catalytic capabilities of the proteins, and the multilayer structure is robust enough to withstand the bubbling catalytic reactions and could be repeatedly used due to conservation of proteins. The spatiotemporal retention of proteins could be adjusted by varying the number of capping layers. Furthermore, we demonstrate that the protein-loaded interfacial layers could not only be used to construct catalytic-active interfaces, but also be integrated as the power-generating unit to propel a macroscopic floating device. Electronic supplementary information (ESI) available: UV-vis spectra of the substrate covered by only polymeric (PAH/PAA)5/(PAH/DAS)5 multilayers, UV-vis spectra of the covalently cross-linked (PAH/SiO2 NP)5/(PAH/DAS)5 hybrid multilayers and (CAT/PAH)5/(PAH/DAS)5 films. TEM of the mesoporous silica. See DOI: 10.1039/c6nr01671e

Rare earth elements in fly ashes created during the coal burning process in certain coal-fired power plants operating in Poland - Upper Silesian Industrial Region.

PubMed

Smolka-Danielowska, Danuta

2010-11-01

The subject of the study covered volatile ashes created during hard coal burning process in ash furnaces, in power plants operating in the Upper Silesian Industrial Region, Southern Poland. Coal-fired power plants are furnished with dust extracting devices, electro precipitators, with 99-99.6% combustion gas extracting efficiency. Activity concentrations ofTh-232, Ra-226, K-40, Ac-228, U-235 and U-238 were measured with gamma-ray spectrometer. Concentrations of selected rare soil elements (La, Ce, Nd, Sm, Y, Gd, Th, U) were analysed by means of instrumental neutron activation analysis (INAA). Mineral phases of individual ash particles were identified with the use of scanning electron microscope equipped with EDS attachment. Laser granulometric analyses were executed with the use of Analyssette analyser. The activity of the investigated fly-ash samples is several times higher than that of the bituminous coal samples; in the coal, the activities are: 226Ra - 85.4 Bq kg(-1), 40 K-689 Bq kg(-1), 232Th - 100.8 Bq kg(-1), 235U-13.5 Bq kg(-1), 238U-50 Bq kg(-1) and 228Ac - 82.4 Bq kg(-1).

Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

DOEpatents

Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

1988-06-16

An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication

DOEpatents

Ashby, Carol I. H.; Myers, David R.; Vook, Frederick L.

1989-01-01

An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.

Organic light emitting device structure for obtaining chromaticity stability

DOEpatents

Tung, Yeh-Jiun [Princeton, NJ; Ngo, Tan [Levittown, PA

2007-05-01

The present invention relates to organic light emitting devices (OLEDs). The devices of the present invention are efficient white or multicolored phosphorescent OLEDs which have a high color stability over a wide range of luminances. The devices of the present invention comprise an emissive region having at least two emissive layers, with each emissive layer comprising a different host and emissive dopant, wherein at least one of the emissive dopants emits by phosphorescence.

Organic light emitting device structures for obtaining chromaticity stability

DOEpatents

Tung, Yeh-Jiun; Lu, Michael; Kwong, Raymond C.

2005-04-26

The present invention relates to organic light emitting devices (OLEDs). The devices of the present invention are efficient white or multicolored phosphorescent OLEDs which have a high color stability over a wide range of luminances. The devices of the present invention comprise an emissive region having at least two emissive layers, with each emissive layer comprising a different host and emissive dopant, wherein at least one of the emissive dopants emits by phosphorescence.

An analysis of using semi-permeable membrane devices to assess persistent organic pollutants in ambient air of Alaska

NASA Astrophysics Data System (ADS)

Wu, Ted Hsin-Yeh

A region of concern for persistent organic pollutants (POPS) contamination is the Arctic, because of POPs' ability to migrate long distances through the atmosphere toward cold regions, condense out of the atmosphere in those region, deposit in sensitive arctic ecosystems and bioaccumulate in Arctic species. Thus, monitoring of POP concentrations in the Arctic is necessary. However, traditional active air monitoring techniques for POPs may not be feasible in the Arctic, because of logistics and cost. While these issues may be overcome using passive air sampling devices, questions arise about the interpretation of the contaminant concentrations detected using the passive air samplers. In this dissertation semi-permeable membrane devices (SPMDs) containing triolein were characterized and evaluated for use in sampling the ambient air of Alaska for three classes of POPS (organochlorines [OCs], polychlorinated biphenyls [PCBs] and polyaromatic hydrocarbons [PAHs]). In addition, a SPMD-based sampling campaign for POPS was conducted simultaneously at five sites in Alaska during a one-year period. The POP concentrations obtained from the SPMDs were examined to determine the spatial and seasonal variability at the locations. POP concentrations detected in SPMDs were influenced by exposure to sunlight, concentrations of particulate-bound contaminants and changes in temperature. PAH concentrations in a SPMD mounted in a sunlight-blocking deployment unit were higher than in a SPMD exposed to sunlight (P = 0.007). PCB concentrations in SPMD exposed to filtered and non-filtered air were significantly different (P < 0.0001). Derived PAH air concentrations measured using SPMD were within a factor of approximately 7 of those obtained from an air sampler in Barrow, Alaska. The field study showed three distinct groups of samples. Barrow was separated from the sub-Arctic samples and a Homer sample (September-December) was distinct from the sub-Arctic samples. The separations suggest different air masses are being sampled by SPMDs. Lower concentrations of total POPs were measured at the coastal sites than the Interior sites.

Cortical and subcortical mechanisms of brain-machine interfaces.

PubMed

Marchesotti, Silvia; Martuzzi, Roberto; Schurger, Aaron; Blefari, Maria Laura; Del Millán, José R; Bleuler, Hannes; Blanke, Olaf

2017-06-01

Technical advances in the field of Brain-Machine Interfaces (BMIs) enable users to control a variety of external devices such as robotic arms, wheelchairs, virtual entities and communication systems through the decoding of brain signals in real time. Most BMI systems sample activity from restricted brain regions, typically the motor and premotor cortex, with limited spatial resolution. Despite the growing number of applications, the cortical and subcortical systems involved in BMI control are currently unknown at the whole-brain level. Here, we provide a comprehensive and detailed report of the areas active during on-line BMI control. We recorded functional magnetic resonance imaging (fMRI) data while participants controlled an EEG-based BMI inside the scanner. We identified the regions activated during BMI control and how they overlap with those involved in motor imagery (without any BMI control). In addition, we investigated which regions reflect the subjective sense of controlling a BMI, the sense of agency for BMI-actions. Our data revealed an extended cortical-subcortical network involved in operating a motor-imagery BMI. This includes not only sensorimotor regions but also the posterior parietal cortex, the insula and the lateral occipital cortex. Interestingly, the basal ganglia and the anterior cingulate cortex were involved in the subjective sense of controlling the BMI. These results inform basic neuroscience by showing that the mechanisms of BMI control extend beyond sensorimotor cortices. This knowledge may be useful for the development of BMIs that offer a more natural and embodied feeling of control for the user. Hum Brain Mapp 38:2971-2989, 2017. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

The use of hearing protection devices by older adults during recreational noise exposure.

PubMed

Nondahl, D M; Cruickshanks, K J; Dalton, D S; Klein, B E K; Klein, R; Tweed, T S; Wiley, T L

2006-01-01

A population-based study to assess the use of hearing protection devices by older adults during noisy recreational activities was performed. The population-based Epidemiology of Hearing Loss Study was designed to measure the prevalence of hearing loss in adults residing in Beaver Dam, Wisconsin. The use of hearing protection devices during noisy recreational activities was assessed by performing three examinations over a period of 10 years (1993-1995, no. of participants (n)=3753, aged 48-92 years; 1998-2000, n=2800, aged 53-97 years; 2003-2005, n=2395, aged 58-100 years). The recreational activities included hunting, target shooting, woodworking/carpentry, metalworking, driving loud recreational vehicles, and performing yard work using either power tools or a chain saw. The prevalence of using hearing protection devices during any of these activities increased with time (9.5%, 15.0%, and 19.9% at baseline, 5 years, and 10 years, respectively). However, the use of hearing protection devices remained low for most activities. Those under the age of 65 were twice as likely to use hearing protection devices during noisy activities than were older adults. Men, those with a hearing handicap, and those with significant tinnitus were more likely to use hearing protection devices. Smokers and the less educated were less likely to use hearing protection devices. The results demonstrated that many adults expose themselves to potentially damaging recreational noise, leaving them at risk for hearing loss.

Electroluminescent apparatus having a structured luminescence conversion layer

DOEpatents

Krummacher, Benjamin Claus [Sunnyvale, CA

2008-09-02

An apparatus such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer disposed on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains color-changing and non-color-changing regions arranged in a particular pattern.

Heterogeneous response of cardiac sympathetic function to cardiac resynchronization therapy in heart failure documented by 11[C]-hydroxy-ephedrine and PET/CT.

PubMed

Capitanio, Selene; Nanni, Cristina; Marini, Cecilia; Bonfiglioli, Rachele; Martignani, Cristian; Dib, Bassam; Fuccio, Chiara; Boriani, Giuseppe; Picori, Lorena; Boschi, Stefano; Morbelli, Silvia; Fanti, Stefano; Sambuceti, Gianmario

2015-11-01

Cardiac resynchronization therapy (CRT) is an accepted treatment in patients with end-stage heart failure. PET permits the absolute quantification of global and regional homogeneity in cardiac sympathetic innervation. We evaluated the variation of cardiac adrenergic activity in patients with idiopathic heart failure (IHF) disease (NYHA III-IV) after CRT using (11)C-hydroxyephedrine (HED) PET/CT. Ten IHF patients (mean age = 68; range = 55-81; average left ventricular ejection fraction 26 ± 4%) implanted with a resynchronization device underwent three HED PET/CT studies: PET 1 one week after inactive device implantation; PET 2, one week after PET 1 under stimulated rhythm; PET 3, at 3 months under active CRT. A dedicated software (PMOD 3.4 version) was used to estimate global and regional cardiac uptake of HED through 17 segment polar maps. At baseline, HED uptake was heterogeneously distributed throughout the left ventricle with a variation coefficient of 18 ± 5%. This variable markedly decreased after three months CRT (12 ± 5%, p < 0.01). Interestingly, subdividing the 170 myocardial segments (17 segments of each patient multiplied by the number of patients) into two groups, according to the median value of tracer uptake expressed as % of maximal myocardial uptake (76%), we observed a different behaviour depending on baseline innervation: HED uptake significantly increased only in segments with "impaired innervation" (SUV 2.61 ± 0.92 at PET1 and 3.05 ± 1.67 at three months, p < 0.01). As shown by HED PET/CT uptake and distribution, improvement in homogeneity of myocardial neuronal function reflected a selective improvement of tracer uptake in regions with more severe neuronal damage. These finding supported the presence of a myocardial regional variability in response of cardiac sympathetic system to CRT and a systemic response involving remote tissues with rich adrenergic innervation. This work might contribute to identify imaging parameters that could predict the response to CRT therapy. Copyright © 2015 Elsevier Inc. All rights reserved.

Multi-junction solar cell device

DOEpatents

Friedman, Daniel J.; Geisz, John F.

2007-12-18

A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

Pixels, Imagers and Related Fabrication Methods

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

2014-01-01

Pixels, imagers and related fabrication methods are described. The described methods result in cross-talk reduction in imagers and related devices by generating depletion regions. The devices can also be used with electronic circuits for imaging applications.

Pixels, Imagers and Related Fabrication Methods

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

2016-01-01

Pixels, imagers and related fabrication methods are described. The described methods result in cross-talk reduction in imagers and related devices by generating depletion regions. The devices can also be used with electronic circuits for imaging applications.

THE EFFECT OF DOUBLE VERSUS SINGLE OSCILLATING EXERCISE DEVICES ON TRUNK AND LIMB MUSCLE ACTIVATION

PubMed Central

Arora, Shruti; Button, Duane C.; Basset, Fabien A.

2013-01-01

Purpose/Background: Proper strengthening of the core and upper extremities is important for muscular health, performance, and rehabilitation. Exercise devices have been developed that attempt to disrupt the center of gravity in order to activate the trunk stabilizing muscles. The objective of this study was to analyze the trunk and shoulder girdle muscle activation with double and single oscillating exercise devices (DOD and SOD respectively) in various planes. Methods: Twelve male subjects performed three interventions using both devices under randomized conditions: single-handed vertical orientation of DOD and SOD to produce 1) medio-lateral oscillation in the frontal plane 2) dorso-ventral oscillation in the sagittal plane and 3) single-handed horizontal orientation for superior and inferior oscillation in the transverse plane. Electromyographic (EMG) activity during the interventions of the anterior deltoid, triceps brachii, biceps brachii, forearm flexors as well as lower abdominal and back stabilizer muscles was collected, and were normalized to maximal voluntary contractions. A two way repeated measures ANOVA (2x3) was conducted to assess the influence of the devices and movement planes on muscle activation. Results: The DOD provided 35.9%, 40.8%, and 52.3% greater anterior deltoid, transverse abdominus (TA)/internal oblique (IO) and lumbo-sacral erector spinae (LSES) activation than did the SOD respectively. Effect size calculations revealed that these differences were of moderate to large magnitude (0.86, 0.48, and 0.61 respectively). There were no significant differences in muscular activation achieved between devices for the triceps brachii, biceps brachii and forearm flexor muscles. Exercise in the transverse plane resulted in 30.5%, 29.5%, and 19.5% greater activation than the sagittal and 21.8%, 17.2%, and 26.3% greater activation than the frontal plane for the anterior deltoid, TA/IO and LSES respectively. Conclusions: A DOD demonstrated greater muscular activity for trunk and shoulder muscle activation but does not provide an advantage for limb activation. Overall, oscillating the devices in the transverse plane provided greater muscular activation of the anterior deltoid, TA/IO and LSES than use of the devices during frontal or sagittal plane movements. Level of evidence: 2c: Outcomes research. PMID:24175124

Aloe vera Derived Activated High-Surface-Area Carbon for Flexible and High-Energy Supercapacitors.

PubMed

Karnan, M; Subramani, K; Sudhan, N; Ilayaraja, N; Sathish, M

2016-12-28

Materials which possess high specific capacitance in device configuration with low cost are essential for viable application in supercapacitors. Herein, a flexible high-energy supercapacitor device was fabricated using porous activated high-surface-area carbon derived from aloe leaf (Aloe vera) as a precursor. The A. vera derived activated carbon showed mesoporous nature with high specific surface area of ∼1890 m 2 /g. A high specific capacitance of 410 and 306 F/g was achieved in three-electrode and symmetric two-electrode system configurations in aqueous electrolyte, respectively. The fabricated all-solid-state device showed a high specific capacitance of 244 F/g with an energy density of 8.6 Wh/kg. In an ionic liquid electrolyte, the fabricated device showed a high specific capacitance of 126 F/g and a wide potential window up to 3 V, which results in a high energy density of 40 Wh/kg. Furthermore, it was observed that the activation temperature has significant role in the electrochemical performance, as the activated sample at 700 °C showed best activity than the samples activated at 600 and 800 °C. The electron microscopic images (FE-SEM and HR-TEM) confirmed the formation of pores by the chemical activation. A fabricated supercapacitor device in ionic liquid with 3 V could power up a red LED for 30 min upon charging for 20s. Also, it is shown that the operation voltage and capacitance of flexible all-solid-state symmetric supercapacitors fabricated using aloe-derived activated carbon could be easily tuned by series and parallel combinations. The performance of fabricated supercapacitor devices using A. vera derived activated carbon in all-solid-state and ionic liquid indicates their viable applications in flexible devices and energy storage.

A stereotactic method for image-guided transcranial magnetic stimulation validated with fMRI and motor-evoked potentials.

PubMed

Neggers, S F W; Langerak, T R; Schutter, D J L G; Mandl, R C W; Ramsey, N F; Lemmens, P J J; Postma, A

2004-04-01

Transcranial Magnetic Stimulation (TMS) delivers short magnetic pulses that penetrate the skull unattenuated, disrupting neural processing in a noninvasive, reversible way. To disrupt specific neural processes, coil placement over the proper site is critical. Therefore, a neural navigator (NeNa) was developed. NeNa is a frameless stereotactic device using structural and functional magnetic resonance imaging (fMRI) data to guide TMS coil placement. To coregister the participant's head to his MRI, 3D cursors are moved to anatomical landmarks on a skin rendering of the participants MRI on a screen, and measured at the head with a position measurement device. A method is proposed to calculate a rigid body transformation that can coregister both sets of coordinates under realistic noise conditions. After coregistration, NeNa visualizes in real time where the device is located with respect to the head, brain structures, and activated areas, enabling precise placement of the TMS coil over a predefined target region. NeNa was validated by stimulating 5 x 5 positions around the 'motor hotspot' (thumb movement area), which was marked on the scalp guided by individual fMRI data, while recording motor-evoked potentials (MEPs) from the abductor pollicis brevis (APB). The distance between the center of gravity (CoG) of MEP responses and the location marked on the scalp overlying maximum fMRI activation was on average less then 5 mm. The present results demonstrate that NeNa is a reliable method for image-guided TMS coil placement.

Overcoming Limitations in Semiconductor Alloy Design

NASA Astrophysics Data System (ADS)

Christian, Theresa Marie

Inorganic semiconductors provide an astonishingly versatile, robust, and efficient platform for optoelectronic energy conversion devices. However, conventional alloys and growth regimes face materials challenges that restrict the full potential of these devices. Novel alloy designs based on isoelectronic co-doping, metamorphic growth and controllable atomic ordering offer new pathways to practical and ultra-high-efficiency optoelectronic devices including solar cells and light-emitting diodes. Abnormal isoelectronic alloys of GaP1-xBix, GaP 1-x-yBixNy, and GaAs1-xBix with unprecedented bismuth incorporation fractions and crystalline quality are explored in this thesis research. Comparative studies of several GaP1-xBix and GaP1-x-yBixNy alloys demonstrate that the site-specific incorporation of bismuth during epitaxial growth is sensitive to growth temperature and has dramatic effects on carrier transfer processes in these alloys. Additionally, distinctive bismuth-related localized states are spectrally identified for the first time in samples of GaAs1-xBix grown by laser-assisted epitaxial growth. These results address fundamental questions about the nature of bismuth-bismuth inter-impurity interactions. Finally, a metamorphic growth strategy for a novel light-emitting diode (LED) design is also discussed. This work utilized direct-bandgap AlxIn1-xP active layers with atomic ordering-based electron confinement to improve emission in the yellow and green spectral regions, where incumbent technologies are least effective, and demonstrated the feasibility of non-lattice-matched LED active materials for visible light emission.

Comparison of wrist-worn and hip-worn activity monitors under free living conditions.

PubMed

Hargens, Trent A; Deyarmin, Kayla N; Snyder, Kelsey M; Mihalik, Allison G; Sharpe, Lauren E

2017-04-01

Current recommendations state that individuals engage in 150 min of moderate or 75 min of vigorous intensity physical activity (PA) each week. Commercial PA monitors are becoming popular for everyday use. The accuracy of these devices, however, is not well understood. We sought to examine the accuracy of two commercial devices, one wrist and one hip-worn, under free-living conditions. Twenty-two subjects wore two commercially available devices and one ActiGraph (AG) for seven consecutive days under normal activity. Mean steps per day between all three devices differed significantly. No differences were found in moderate-to-vigorous intensity physical activity (MPVA). Daily energy expenditure (EE) also differed significantly between the AG and the commercial devices. Bland-Altman analysis found poor agreement between the AG and the commercial devices with regards to steps and EE, but good agreement in MVPA. Results suggest that the commercial devices are less accurate in estimating steps and EE. These devices did show good agreement with regards to MVPA, suggesting that they may provide useful feedback for individuals seeking to achieve the current PA guidelines for MVPA. Improvements are needed with regards to steps and EE estimation.

Experimental quantification of the fluid dynamics in blood-processing devices through 4D-flow imaging: A pilot study on a real oxygenator/heat-exchanger module.

PubMed

Piatti, Filippo; Palumbo, Maria Chiara; Consolo, Filippo; Pluchinotta, Francesca; Greiser, Andreas; Sturla, Francesco; Votta, Emiliano; Siryk, Sergii V; Vismara, Riccardo; Fiore, Gianfranco Beniamino; Lombardi, Massimo; Redaelli, Alberto

2018-02-08

The performance of blood-processing devices largely depends on the associated fluid dynamics, which hence represents a key aspect in their design and optimization. To this aim, two approaches are currently adopted: computational fluid-dynamics, which yields highly resolved three-dimensional data but relies on simplifying assumptions, and in vitro experiments, which typically involve the direct video-acquisition of the flow field and provide 2D data only. We propose a novel method that exploits space- and time-resolved magnetic resonance imaging (4D-flow) to quantify the complex 3D flow field in blood-processing devices and to overcome these limitations. We tested our method on a real device that integrates an oxygenator and a heat exchanger. A dedicated mock loop was implemented, and novel 4D-flow sequences with sub-millimetric spatial resolution and region-dependent velocity encodings were defined. Automated in house software was developed to quantify the complex 3D flow field within the different regions of the device: region-dependent flow rates, pressure drops, paths of the working fluid and wall shear stresses were computed. Our analysis highlighted the effects of fine geometrical features of the device on the local fluid-dynamics, which would be unlikely observed by current in vitro approaches. Also, the effects of non-idealities on the flow field distribution were captured, thanks to the absence of the simplifying assumptions that typically characterize numerical models. To the best of our knowledge, our approach is the first of its kind and could be extended to the analysis of a broad range of clinically relevant devices. Copyright © 2017 Elsevier Ltd. All rights reserved.

Potentiality of a small and fast dense plasma focus as hard x-ray source for radiographic applications

NASA Astrophysics Data System (ADS)

Pavez, Cristian; Pedreros, José; Zambra, Marcelo; Veloso, Felipe; Moreno, José; Ariel, Tarifeño-Saldivia; Soto, Leopoldo

2012-10-01

Currently, a new generation of small plasma foci devices is being developed and researched, motivated by its potential use as portable sources of x-ray and neutron pulsed radiation for several applications. In this work, experimental results of the accumulated x-ray dose angular distribution and characterization of the x-ray source size are presented for a small and fast plasma focus device, ‘PF-400J’ (880 nF, 40 nH, 27-29 kV, ˜350 J, T/4 ˜ 300 ns). The experimental device is operated using hydrogen as the filling gas in a discharge region limited by a volume of around 80 cm3. The x-ray radiation is monitored, shot by shot, using a scintillator-photomultiplier system located outside the vacuum chamber at 2.3 m far away from the radiation emission region. The angular x-ray dose distribution measurement shows a well-defined emission cone, with an expansion angle of 5°, which is observed around the plasma focus device symmetry axis using TLD-100 crystals. The x-ray source size measurements are obtained using two image-forming aperture techniques: for both cases, one small (pinhole) and one large for the penumbral imaging. These results are in agreement with the drilling made by the energetic electron beam coming from the pinch region. Additionally, some examples of image radiographic applications are shown in order to highlight the real possibilities of the plasma focus device as a portable x-ray source. In the light of the obtained results and the scaling laws observed in plasma foci devices, we present a discussion on the potentiality and advantages of these devices as pulsed and safe sources of x-radiation for applications.

Self-Formed Channel Devices Based on Vertically Grown 2D Materials with Large-Surface-Area and Their Potential for Chemical Sensor Applications.

PubMed

Kim, Chaeeun; Park, Jun-Cheol; Choi, Sun Young; Kim, Yonghun; Seo, Seung-Young; Park, Tae-Eon; Kwon, Se-Hun; Cho, Byungjin; Ahn, Ji-Hoon

2018-04-01

2D layered materials with sensitive surfaces are promising materials for use in chemical sensing devices, owing to their extremely large surface-to-volume ratios. However, most chemical sensors based on 2D materials are used in the form of laterally defined active channels, in which the active area is limited to the actual device dimensions. Therefore, a novel approach for fabricating self-formed active-channel devices is proposed based on 2D semiconductor materials with very large surface areas, and their potential gas sensing ability is examined. First, the vertical growth phenomenon of SnS 2 nanocrystals is investigated with large surface area via metal-assisted growth using prepatterned metal electrodes, and then self-formed active-channel devices are suggested without additional pattering through the selective synthesis of SnS 2 nanosheets on prepatterned metal electrodes. The self-formed active-channel device exhibits extremely high response values (>2000% at 10 ppm) for NO 2 along with excellent NO 2 selectivity. Moreover, the NO 2 gas response of the gas sensing device with vertically self-formed SnS 2 nanosheets is more than two orders of magnitude higher than that of a similar exfoliated SnS 2 -based device. These results indicate that the facile device fabrication method would be applicable to various systems in which surface area plays an important role. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High efficiency light source using solid-state emitter and down-conversion material

DOEpatents

Narendran, Nadarajah; Gu, Yimin; Freyssinier, Jean Paul

2010-10-26

A light emitting apparatus includes a source of light for emitting light; a down conversion material receiving the emitted light, and converting the emitted light into transmitted light and backward transmitted light; and an optic device configured to receive the backward transmitted light and transfer the backward transmitted light outside of the optic device. The source of light is a semiconductor light emitting diode, a laser diode (LD), or a resonant cavity light emitting diode (RCLED). The down conversion material includes one of phosphor or other material for absorbing light in one spectral region and emitting light in another spectral region. The optic device, or lens, includes light transmissive material.

Mobile optogenetic modules for mice

NASA Astrophysics Data System (ADS)

Rusakov, Konstantin; Radzewicz, Czesław; Czajkowski, Rafał; Konopka, Witold; Chilczuk, Joanna

2017-08-01

We present a set of novel optogenetic devices for mice freely moving in cages. The purpose of the devices is to stimulate specific brain regions using light. The devices we have constructed consist of an electrical connector, cannula and micro- LED chip operating at 470 nm as light source for delivering light into the stimulated region of the mouse brain. We have also demonstrated light conversion from 470 nm to 590 nm by applying a silicate orange phosphor directly to the LED chip. The measured conversion efficiency is approximately 80% for ZIP595I phosphor. We discuss the properties of various forms of implant needles with respect to the ease of LED attachment and experimental validation of the constructed optogenetic implants.

GASEOUS DISCHARGE DEVICE

DOEpatents

Gow, J.D.

1961-01-10

An extremely compact two-terminal gaseous discharge device is described that is capable of producing neutrons in copious quantities, relatively high energy ions, intense x rays, and the like. Principal novelty resides in the provision of a crossed electric-magnetic field region in the discharge envelope that traps electrons and accelerates them to very high energies to provide an intense ionizing medium adjacent the anode of the device for ionizing gas therein with extremely high efficiency. In addition, the crossed-field trapping region holds the electrons close to the anode whereby the acceleration of ions to the cathode is not materially effected by the electron sheath and the ions assume substantially the full energy of the anodecathode potential drop. (auth)

GAS DISCHARGE DEVICES

DOEpatents

Jefferson, S.

1958-11-11

An apparatus utilized in introducing tritium gas into envelope of a gas discharge device for the purpose f maintaining the discharge path in ionized condition is described. ln addition to the cathode and anode, the ischarge device contains a zirconium or tantalum ilament arranged for external excitation and a metallic seed containing tritium, and also arranged to have a current passed through it. Initially, the zirconium or tantalum filament is vaporized to deposit its material adjacent the main discharge region. Then the tritium gas is released and, due to its affinity for the first released material, it deposits in the region of the main discharge where it is most effective in maintaining the discharge path in an ionized condition.

Mapping nanoscale effects of localized noise-source activities on photoconductive charge transports in polymer-blend films.

PubMed

Shekhar, Shashank; Cho, Duckhyung; Cho, Dong-Guk; Yang, Myungjae; Hong, Seunghun

2018-05-18

We develolped a method to directly image the nanoscale effects of localized noise-source activities on photoconducting charge transports in domain structures of phase-separated polymer-blend films of Poly(9,9-di-n-octylfluorenyl-2,7-diyl) and Poly(9,9-di-n-octylfluorene-alt-benzothiadiazole). For the imaging, current and noise maps of the polymer-blend were recorded using a conducting nanoprobe in contact with the surface, enabling the conductivity (σ) and noise-source density (N T ) mappings under an external stimulus. The blend-films exhibited the phase-separation between the constituent polymers at domains level. Within a domain, high σ (low N T ) and low σ (high N T ) regions were observed, which could be associated with the ordered and disordered regions of a domain. In the N T maps, we observed that noise-sources strongly affected the conduction mechanism, resulting in a scaling behavior of σ ∝ [Formula: see text] in both ordered and disordered regions. When a blend film was under an influence of an external stimulus such as a high bias or an illumination, an increase in the σ was observed, but that also resulted in increases in the N T as a trade-off. Interestingly, the Δσ versus ΔN T plot exhibited an unusual scaling behavior of Δσ ∝ [Formula: see text] which is attributed to the de-trapping of carriers from deep traps by the external stimuli. In addition, we found that an external stimulus increased the conductivity at the interfaces without significantly increasing their N T , which can be the origin of the superior performances of polymer-blend based devices. These results provide valuable insight about the effects of noise-sources on nanoscale optoelectronic properties in polymer-blend films, which can be an important guideline for improving devices based on polymer-blend.

Mapping nanoscale effects of localized noise-source activities on photoconductive charge transports in polymer-blend films

NASA Astrophysics Data System (ADS)

Shekhar, Shashank; Cho, Duckhyung; Cho, Dong-Guk; Yang, Myungjae; Hong, Seunghun

2018-05-01

We develolped a method to directly image the nanoscale effects of localized noise-source activities on photoconducting charge transports in domain structures of phase-separated polymer-blend films of Poly(9,9-di-n-octylfluorenyl-2,7-diyl) and Poly(9,9-di-n-octylfluorene-alt-benzothiadiazole). For the imaging, current and noise maps of the polymer-blend were recorded using a conducting nanoprobe in contact with the surface, enabling the conductivity (σ) and noise-source density (N T) mappings under an external stimulus. The blend-films exhibited the phase-separation between the constituent polymers at domains level. Within a domain, high σ (low N T) and low σ (high N T) regions were observed, which could be associated with the ordered and disordered regions of a domain. In the N T maps, we observed that noise-sources strongly affected the conduction mechanism, resulting in a scaling behavior of σ ∝ {{N}{{T}}}-0.5 in both ordered and disordered regions. When a blend film was under an influence of an external stimulus such as a high bias or an illumination, an increase in the σ was observed, but that also resulted in increases in the N T as a trade-off. Interestingly, the Δσ versus ΔN T plot exhibited an unusual scaling behavior of Δσ ∝ {{Δ }}{{N}{{T}}}0.5, which is attributed to the de-trapping of carriers from deep traps by the external stimuli. In addition, we found that an external stimulus increased the conductivity at the interfaces without significantly increasing their N T, which can be the origin of the superior performances of polymer-blend based devices. These results provide valuable insight about the effects of noise-sources on nanoscale optoelectronic properties in polymer-blend films, which can be an important guideline for improving devices based on polymer-blend.

Wearable strain sensors based on thin graphite films for human activity monitoring

NASA Astrophysics Data System (ADS)

Saito, Takanari; Kihara, Yusuke; Shirakashi, Jun-ichi

2017-12-01

Wearable health-monitoring devices have attracted increasing attention in disease diagnosis and health assessment. In many cases, such devices have been prepared by complicated multistep procedures which result in the waste of materials and require expensive facilities. In this study, we focused on pyrolytic graphite sheet (PGS), which is a low-cost, simple, and flexible material, used as wearable devices for monitoring human activity. We investigated wearable devices based on PGSs for the observation of elbow and finger motions. The thin graphite films were fabricated by cutting small films from PGSs. The wearable devices were then made from the thin graphite films assembled on a commercially available rubber glove. The human motions could be observed using the wearable devices. Therefore, these results suggested that the wearable devices based on thin graphite films may broaden their application in cost-effective wearable electronics for the observation of human activity.

Normalization of Intrinsic Neural Circuits Governing Tourette's Syndrome Using Cranial Electrotherapy Stimulation.

PubMed

Qiao, Jianping; Weng, Shenhong; Wang, Pengwei; Long, Jun; Wang, Zhishun

2015-05-01

The aim of this study was to investigate the normalization of the intrinsic functional activity and connectivity of TS adolescents before and after the cranial electrotherapy stimulation (CES) with alpha stim device. We performed resting-state functional magnetic resonance imaging on eight adolescents before and after CES with mean age of about nine-years old who had Tourette's syndrome with moderate to severe tics symptom. Independent component analysis (ICA) with hierarchical partner matching method was used to examine the functional connectivity between regions within cortico-striato-thalamo-cortical (CSTC) circuit. Granger causality was used to investigate effective connectivity among these regions detected by ICA. We then performed pattern classification on independent components with significant group differences that served as endophenotype markers to distinguish the adolescents between TS and the normalized ones after CES. Results showed that TS adolescents after CES treatment had stronger functional activity and connectivity in anterior cingulate cortex (ACC), caudate and posterior cingulate cortex while had weaker activity in supplementary motor area within the motor pathway compared with TS before CES. The results suggest that the functional activity and connectivity in motor pathway was suppressed while activities in the control portions within CSTC loop including ACC and caudate were increased in TS adolescents after CES compared with adolescents before CES. The normalization of the balance between motor and control portions of the CSTC circuit may result in the recovery of TS adolescents.

Method of making an improved superconducting quantum interference device

DOEpatents

Wu, Cheng-Teh; Falco, Charles M.; Kampwirth, Robert T.

1977-01-01

An improved superconducting quantum interference device is made by sputtering a thin film of an alloy of three parts niobium to one part tin in a pattern comprising a closed loop with a narrow region, depositing a thin film of a radiation shield such as copper over the niobium-tin, scribing a narrow line in the copper over the narrow region, exposing the structure at the scribed line to radiation and removing the deposited copper.

Low-loss multimode interference couplers for terahertz waves

NASA Astrophysics Data System (ADS)

Themistos, Christos; Kalli, Kyriacos; Komodromos, Michael; Markides, Christos; Quadir, Anita; Rahman, B. M. Azizur; Grattan, Kenneth T. V.

2012-04-01

The terahertz (THz) frequency region of the electromagnetic spectrum is located between the traditional microwave spectrum and the optical frequencies, and offers a significant scientific and technological potential in many fields, such as in sensing, in imaging and in spectroscopy. Waveguiding in this intermediate spectral region is a major challenge. Amongst the various THz waveguides suggested, metal-clad plasmonic waveguides and specifically hollow core structures, coated with insulating material are the most promising low-loss waveguides used in both active and passive devices. Optical power splitters are important components in the design of optoelectronic systems and optical communication networks such as Mach-Zehnder Interferometric switches, polarization splitter and polarization scramblers. Several designs for the implementation of the 3dB power splitters have been proposed in the past, such as the directional coupler-based approach, the Y-junction-based devices and the MMI-based approach. In the present paper a novel MMI-based 3dB THz wave splitter is implemented using Gold/polystyrene (PS) coated hollow glass rectangular waveguides. The H-field FEM based full-vector formulation is used here to calculate the complex propagation characteristics of the waveguide structure and the finite element beam propagation method (FE-BPM) and finite difference time domain (FDTD) approach to demonstrate the performance of the proposed 3dB splitter.

Intra-Arterial Therapy for Acute Stroke and the Effect of Technological Advances on Recanalization: Findings in a Community Hospital.

PubMed

Goldstein, Jonas H; Denslow, Sheri A; Goldstein, Samuel J; Marx, William F; Short, John G; Taylor, Reid D; Schneider, Alexander L

2016-01-01

Recent randomized controlled studies have shown improvement in recanalization outcomes when physicians use the latest intra-arterial therapy devices in patients with acute, large-vessel, intracranial occlusions. The goal of this study was to explore how new procedures affected degree of and time to recanalization at a single center over the past 12 years as technology has improved. Patients were included in the study if they had a large or medium intracranial vessel occlusion and had undergone intra-arterial therapy for acute stroke during the period 2002-2013. Therapies were categorized as intra-arterial thrombolysis with tissue plasminogen activator (IA tPA), mechanical thrombectomy using 1st-generation devices (Merci and Penumbra), or mechanical thrombectomy using 2nd-generation devices (stent-trievers). Recanalization was defined using a modified Thrombolysis in Cerebral Infarction (TICI) scale. Primary treatment was IA tPA in 24 (12.4%) patients, 1st-generation devices in 128 (66.0%) patients, and 2nd-generation devices in 42 (21.6%) patients. TICI 2b was achieved in 7 (29.2%) patients treated with IA tPA, in 79 (61.7%) patients treated with 1st-generation devices, and in 38 (90.5%) patients treated with 2nd-generation devices. Compared to patients treated with IA tPA, patients treated with 2nd-generation devices were more likely to reach TICI 2b recanalization (odds ratio, 11.66; 95% CI, 1.56-87.01), and they did so in shorter times. Technological advances over 12 years in endovascular stroke treatments significantly improved the chance of and reduced time to achieving TICI 2b recanalization in our community hospital. This shows the importance of adopting new technologies in a rapidly evolving field in order to provide the best-practice standard of care for the people of our region. ©2016 by the North Carolina Institute of Medicine and The Duke Endowment. All rights reserved.

Evaluating the Consistency of Current Mainstream Wearable Devices in Health Monitoring: A Comparison Under Free-Living Conditions.

PubMed

Wen, Dong; Zhang, Xingting; Liu, Xingyu; Lei, Jianbo

2017-03-07

Wearable devices are gaining increasing market attention; however, the monitoring accuracy and consistency of the devices remains unknown. The purpose of this study was to assess the consistency of the monitoring measurements of the latest wearable devices in the state of normal activities to provide advice to the industry and support to consumers in making purchasing choices. Ten pieces of representative wearable devices (2 smart watches, 4 smart bracelets of Chinese brands or foreign brands, and 4 mobile phone apps) were selected, and 5 subjects were employed to simultaneously use all the devices and the apps. From these devices, intact health monitoring data were acquired for 5 consecutive days and analyzed on the degree of differences and the relationships of the monitoring measurements ​​by the different devices. The daily measurements by the different devices fluctuated greatly, and the coefficient of variation (CV) fluctuated in the range of 2-38% for the number of steps, 5-30% for distance, 19-112% for activity duration, .1-17% for total energy expenditure (EE), 22-100% for activity EE, 2-44% for sleep duration, and 35-117% for deep sleep duration. After integrating the measurement data of 25 days among the devices, the measurements of the number of steps (intraclass correlation coefficient, ICC=.89) and distance (ICC=.84) displayed excellent consistencies, followed by those of activity duration (ICC=.59) and the total EE (ICC=.59) and activity EE (ICC=.57). However, the measurements for sleep duration (ICC=.30) and deep sleep duration (ICC=.27) were poor. For most devices, there was a strong correlation between the number of steps and distance measurements (R 2 >.95), and for some devices, there was a strong correlation between activity duration measurements and EE measurements (R 2 >.7). A strong correlation was observed in the measurements of steps, distance and EE from smart watches and mobile phones of the same brand, Apple or Samsung (r>.88). Although wearable devices are developing rapidly, the current mainstream devices are only reliable in measuring the number of steps and distance, which can be used as health assessment indicators. However, the measurement consistencies of activity duration, EE, sleep quality, and so on, are still inadequate, which require further investigation and improved algorithms. ©Dong Wen, Xingting Zhang, Xingyu Liu, Jianbo Lei. Originally published in the Journal of Medical Internet Research (http://www.jmir.org), 07.03.2017.

An investigation of the SNS Josephson junction as a three-terminal device. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Meissner, H.; Prans, G. P.

1973-01-01

A particular phenomenon of the SNS Josephson junction was investigated; i.e., control by a current entering the normal region and leaving through one of the superconducting regions. The effect of the control current on the junction was found to be dependent upon the ration of the resistances of the two halves of the N layer. A low frequency, lumped, nonlinear model was proposed to describe the electrical characteristics of the device, and a method was developed to plot the dynamic junction resistance as a function of junction current. The effective thermal noise temperature of the sample was determined. Small signal linearized analysis of the device suggests its use as an impedance transformer, although geometric limitations must be overcome. Linear approximation indicates that it is reciprocal and no power gain is possible. It is felt that, with suitable metallurgical and geometrical improvements, the device has promise to become a superconducting transistor.