Modulation characteristics of graphene-based thermal emitters

NASA Astrophysics Data System (ADS)

Mahlmeister, Nathan Howard; Lawton, Lorreta Maria; Luxmoore, Isaac John; Nash, Geoffrey Richard

2016-01-01

We have investigated the modulation characteristics of the emission from a graphene-based thermal emitter both experimentally and through simulations using finite element method modelling. Measurements were performed on devices containing square multilayer graphene emitting areas, with the devices driven by a pulsed DC drive current over a range of frequencies. Simulations show that the dominant heat path is from the emitter to the underlying substrate, and that the thermal resistance between the graphene and the substrate determines the modulation characteristics. This is confirmed by measurements made on devices in which the emitting area is encapsulated by hexagonal boron nitride.

Direct-current polarization characteristics of various AlGaAs laser diodes

NASA Technical Reports Server (NTRS)

Fuhr, P. L.

1984-01-01

Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.

Probing of barrier induced deviations in current-voltage characteristics of polymer devices by impedance spectroscopy

NASA Astrophysics Data System (ADS)

Khan, Motiur Rahman; Rao, K. S. R. Koteswara; Menon, R.

2017-05-01

Temperature dependent current-voltage measurements have been performed on poly(3-methylthiophene) based devices in metal/polymer/metal geometry in temperature range 90-300 K. Space charge limited current (SCLC) controlled by exponentially distributed traps is observed at all the measured temperatures at intermediate voltage range. At higher voltages, trap-free SCLC is observed at 90 K only while slope less than 2 is observed at higher temperatures which is quiet unusual in polymer devices. Impedance measurements were performed at different bias voltages. The unusual behavior observed in current-voltage characteristics is explained by Cole-Cole plot which gives the signature of interface dipole on electrode/polymer interface. Two relaxation mechanisms are obtained from the real part of impedance vs frequency spectra which confirms the interface related phenomena in the device

Method and system for reducing device performance degradation of organic devices

DOEpatents

Teague, Lucile C.

2014-09-02

Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.

Analysis of casing treatment’s impact on the axial compressor model stage characteristics

NASA Astrophysics Data System (ADS)

Tribunskaia, K.; Kozhukhov, Y. V.

2017-08-01

There are special requirements for the compressors of aircraft engines. They must ensure maximum efficiency in a maximally large stable work zone Due to a high pressure ratio these stages are more susceptible to the losses from radial clearance. One of the approaches to reduce such losses is the application of above-rotor devices. In the following study there is considered the impact of such treatments on the compressor stage performance. Despite the fact that there is a sufficient amount of research about this issue, their results are contradictory. The use of these devices can affect the characteristics of compressor stage performance both positively and negatively. This study was conducted using the methods of computational fluid dynamics and was based on the NASA Rotor-37 geometry model stage. Results were obtained through the comparison of the characteristics of stages with and without above-rotor devices.

Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics

NASA Astrophysics Data System (ADS)

Hung, Cheng-Chun; Lin, Yow-Jon

2018-01-01

In order to get a physical insight into the pentacene interlayer-modulated resistive switching (RS) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p+-Si)/In and Au/PMMA/p+-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p+-Si/In device shows RS behavior, whereas the Au/PMMA/p+-Si/In device exhibits the set/reset-free hysteresis current-voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the RS characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

DOE PAGES

King, M. P.; Armstrong, A. M.; Dickerson, J. R.; ...

2015-10-29

Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 10 13 cm -2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaNmore » P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.« less

Contamination avoidance devices for poppet type shutoff valves

NASA Technical Reports Server (NTRS)

Endicott, D. L.

1972-01-01

The technology required to provide acceptable contamination damage avoidance characteristics for poppet type shutoff valves is discussed. Evaluation of the contamination avoidance characteristics of the basic 1T32095 propellant shutoff valve, the cycle life performance of these valves in an uncontaminated environment, and the effectiveness of various auxiliary contamination avoidance devices when used in conjunction with these poppet type valves are included. In addition, a secondary objective is to evaluate two methods of monitoring the performance of the test valves during actual operations using acoustical monitoring instrumentation.

Understanding charge transport and recombination losses in high performance polymer solar cells with non-fullerene acceptors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xuning; Zuo, Xiaobing; Xie, Shenkun

Photovoltaic characteristics, recombination and charge transport properties are investigated. The determined recombination reduction factor can reconcile the supreme device performance in organic solar cells using non-fullerene ITIC acceptor and severe carrier losses in all-polymer devices with P(NDI2OD-T2).

High-performance wireless powering for peripheral nerve neuromodulation systems.

PubMed

Tanabe, Yuji; Ho, John S; Liu, Jiayin; Liao, Song-Yan; Zhen, Zhe; Hsu, Stephanie; Shuto, Chika; Zhu, Zi-Yi; Ma, Andrew; Vassos, Christopher; Chen, Peter; Tse, Hung Fat; Poon, Ada S Y

2017-01-01

Neuromodulation of peripheral nerves with bioelectronic devices is a promising approach for treating a wide range of disorders. Wireless powering could enable long-term operation of these devices, but achieving high performance for miniaturized and deeply placed devices remains a technological challenge. We report the miniaturized integration of a wireless powering system in soft neuromodulation device (15 mm length, 2.7 mm diameter) and demonstrate high performance (about 10%) during in vivo wireless stimulation of the vagus nerve in a porcine animal model. The increased performance is enabled by the generation of a focused and circularly polarized field that enhances efficiency and provides immunity to polarization misalignment. These performance characteristics establish the clinical potential of wireless powering for emerging therapies based on neuromodulation.

High-performance wireless powering for peripheral nerve neuromodulation systems

PubMed Central

Liu, Jiayin; Liao, Song-Yan; Zhen, Zhe; Hsu, Stephanie; Shuto, Chika; Zhu, Zi-Yi; Ma, Andrew; Vassos, Christopher; Chen, Peter; Tse, Hung Fat; Poon, Ada S. Y.

2017-01-01

Neuromodulation of peripheral nerves with bioelectronic devices is a promising approach for treating a wide range of disorders. Wireless powering could enable long-term operation of these devices, but achieving high performance for miniaturized and deeply placed devices remains a technological challenge. We report the miniaturized integration of a wireless powering system in soft neuromodulation device (15 mm length, 2.7 mm diameter) and demonstrate high performance (about 10%) during in vivo wireless stimulation of the vagus nerve in a porcine animal model. The increased performance is enabled by the generation of a focused and circularly polarized field that enhances efficiency and provides immunity to polarization misalignment. These performance characteristics establish the clinical potential of wireless powering for emerging therapies based on neuromodulation. PMID:29065141

Two Different Maintenance Strategies in the Hospital Environment: Preventive Maintenance for Older Technology Devices and Predictive Maintenance for Newer High-Tech Devices.

PubMed

Sezdi, Mana

2016-01-01

A maintenance program generated through the consideration of characteristics and failures of medical equipment is an important component of technology management. However, older technology devices and newer high-tech devices cannot be efficiently managed using the same strategies because of their different characteristics. This study aimed to generate a maintenance program comprising two different strategies to increase the efficiency of device management: preventive maintenance for older technology devices and predictive maintenance for newer high-tech devices. For preventive maintenance development, 589 older technology devices were subjected to performance verification and safety testing (PVST). For predictive maintenance development, the manufacturers' recommendations were used for 134 high-tech devices. These strategies were evaluated in terms of device reliability. This study recommends the use of two different maintenance strategies for old and new devices at hospitals in developing countries. Thus, older technology devices that applied only corrective maintenance will be included in maintenance like high-tech devices.

Two Different Maintenance Strategies in the Hospital Environment: Preventive Maintenance for Older Technology Devices and Predictive Maintenance for Newer High-Tech Devices

PubMed Central

Sezdi, Mana

2016-01-01

A maintenance program generated through the consideration of characteristics and failures of medical equipment is an important component of technology management. However, older technology devices and newer high-tech devices cannot be efficiently managed using the same strategies because of their different characteristics. This study aimed to generate a maintenance program comprising two different strategies to increase the efficiency of device management: preventive maintenance for older technology devices and predictive maintenance for newer high-tech devices. For preventive maintenance development, 589 older technology devices were subjected to performance verification and safety testing (PVST). For predictive maintenance development, the manufacturers' recommendations were used for 134 high-tech devices. These strategies were evaluated in terms of device reliability. This study recommends the use of two different maintenance strategies for old and new devices at hospitals in developing countries. Thus, older technology devices that applied only corrective maintenance will be included in maintenance like high-tech devices. PMID:27195666

High performance quantum cascade lasers: Loss, beam stability, and gain engineering

NASA Astrophysics Data System (ADS)

Bouzi, Pierre Michel

Quantum Cascade (QC) lasers are semiconductor devices emitting in the mid-infrared (3-30 micron) and terahertz (30-300 micron) regions of the electromagnetic spectrum. Since their first demonstration by Jerome Faist et. al. in 1994, they have evolved very quickly into high performance devices and given rise to many applications such as trace-gas sensing, medical diagnosis, free-space communication, and light detection and ranging (LIDAR). In this thesis, we investigate a further increase of the performance of QC devices and, through meticulous device modeling and characterizations, gain a deeper understanding of several of their unique characteristics, especially their carrier transport and lifetime, their characteristic temperature, their waveguide loss and modal gain, their leakage current, and their transverse mode profile. First, in our quest to achieve higher performance, we investigate the effect of growth asymmetries on device transport characteristics. This investigation stems from recent studies on the role of interface roughness on intersubband scattering and device performance. Through a symmetric active core design, we find that interface roughness and ionized impurity scattering induced by dopant migration play a significant role in carrier transport through the device. Understanding how interface roughness affects intersubband scattering, in turn, we engineer the gain in QC devices by placing monolayer barriers at specific locations within the device band structure. These strategically placed additional thin barrier layers introduce roughness scattering into the device active region, thereby selectively decreasing the lower laser state lifetime and increasing population inversion necessary for laser action. Preliminary measurement results from modified devices reveal a 50% decrease in the emission broadening compared to the control structures, which should lead to a two-fold increase in gain. A special class of so-called "strong coupling" QC lasers recently emerged with high optical power and high efficiency at cryogenic temperatures. However their performances decay rather rapidly with temperature in both pulsed and continuous wave modes. Through detailed measurements and analysis, we investigate several possible causes of this shortcoming and propose design modifications for temperature performance improvement. While the strong coupling devices are efficient and powerful, their performance often suffers from unintentional and potentially harmful beam steering at high power. Here, we identify the root of this pointing instability to be from non-linear interactions between multiple transverse modes. And, to resolve this issue, we employ focused ion beam (FIB) milling to etch small lateral constrictions on top of the devices and fill them with metal. This has the effect of greatly reducing the intensity of higher order transverse modes as they propagate through the cavity. A good grasp of the microscopic details involved in QC device operations will result in better lasers, with high beam quality. This, in turn, will enable new applications, such as the detection of SO2 isotopologues near 7.4 micron, which is of particular importance for the study of ultraviolet photolysis and the sulfur cycle on Venus.

Uncertain behaviours of integrated circuits improve computational performance.

PubMed

Yoshimura, Chihiro; Yamaoka, Masanao; Hayashi, Masato; Okuyama, Takuya; Aoki, Hidetaka; Kawarabayashi, Ken-ichi; Mizuno, Hiroyuki

2015-11-20

Improvements to the performance of conventional computers have mainly been achieved through semiconductor scaling; however, scaling is reaching its limitations. Natural phenomena, such as quantum superposition and stochastic resonance, have been introduced into new computing paradigms to improve performance beyond these limitations. Here, we explain that the uncertain behaviours of devices due to semiconductor scaling can improve the performance of computers. We prototyped an integrated circuit by performing a ground-state search of the Ising model. The bit errors of memory cell devices holding the current state of search occur probabilistically by inserting fluctuations into dynamic device characteristics, which will be actualised in the future to the chip. As a result, we observed more improvements in solution accuracy than that without fluctuations. Although the uncertain behaviours of devices had been intended to be eliminated in conventional devices, we demonstrate that uncertain behaviours has become the key to improving computational performance.

Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications

NASA Astrophysics Data System (ADS)

Lee, Jong-Min; Ahn, Ho-Kyun; Jung, Hyun-Wook; Shin, Min Jeong; Lim, Jong-Won

2017-09-01

In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and fabricated Emode HEMTs and characterized device performance. To estimate the possibility of application for millimeter wave applications, we focused on the high frequency performance and power characteristics. To shift the threshold voltage of HEMTs we applied the Al2O3 insulator to the gate structure and adopted the gate recess technique. To increase the frequency performance the e-beam lithography technique was used to define the 0.15 um gate length. To evaluate the dc and high frequency performance, electrical characterization was performed. The threshold voltage was measured to be positive value by linear extrapolation from the transfer curve. The device leakage current is comparable to that of the depletion mode device. The current gain cut-off frequency and the maximum oscillation frequency of the E-mode device with a total gate width of 150 um were 55 GHz and 168 GHz, respectively. To confirm the power performance for mm-wave applications the load-pull test was performed. The measured power density of 2.32 W/mm was achieved at frequencies of 28 and 30 GHz.

Planar junctionless phototransistor: A potential high-performance and low-cost device for optical-communications

NASA Astrophysics Data System (ADS)

Ferhati, H.; Djeffal, F.

2017-12-01

In this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) and its comprehensive theoretical model is proposed to achieve high optical performance and low cost fabrication process. Exhaustive study of the device characteristics and comparison between the proposed junctionless design and the conventional inversion mode structure (IM-OCFET) for similar dimensions are performed. Our investigation reveals that the proposed design exhibits an outstanding capability to be an alternative to the IM-OCFET due to the high performance and the weak signal detection benefit offered by this design. Moreover, the developed analytical expressions are exploited to formulate the objective functions to optimize the device performance using Genetic Algorithms (GAs) approach. The optimized JL-OCFET not only demonstrates good performance in terms of derived drain current and responsivity, but also exhibits superior signal to noise ratio, low power consumption, high-sensitivity, high ION/IOFF ratio and high-detectivity as compared to the conventional IM-OCFET counterpart. These characteristics make the optimized JL-OCFET potentially suitable for developing low cost and ultrasensitive photodetectors for high-performance and low cost inter-chips data communication applications.

Design and demonstrate the performance of cryogenic components representative of space vehicles: Start basket liquid acquisition device performance analysis

NASA Technical Reports Server (NTRS)

1987-01-01

The objective was to design, fabricate and test an integrated cryogenic test article incorporating both fluid and thermal propellant management subsystems. A 2.2 m (87 in) diameter aluminum test tank was outfitted with multilayer insulation, helium purge system, low-conductive tank supports, thermodynamic vent system, liquid acquisition device and immersed outflow pump. Tests and analysis performed on the start basket liquid acquisition device and studies of the liquid retention characteristics of fine mesh screens are discussed.

Seeing with sound? exploring different characteristics of a visual-to-auditory sensory substitution device.

PubMed

Brown, David; Macpherson, Tom; Ward, Jamie

2011-01-01

Sensory substitution devices convert live visual images into auditory signals, for example with a web camera (to record the images), a computer (to perform the conversion) and headphones (to listen to the sounds). In a series of three experiments, the performance of one such device ('The vOICe') was assessed under various conditions on blindfolded sighted participants. The main task that we used involved identifying and locating objects placed on a table by holding a webcam (like a flashlight) or wearing it on the head (like a miner's light). Identifying objects on a table was easier with a hand-held device, but locating the objects was easier with a head-mounted device. Brightness converted into loudness was less effective than the reverse contrast (dark being loud), suggesting that performance under these conditions (natural indoor lighting, novice users) is related more to the properties of the auditory signal (ie the amount of noise in it) than the cross-modal association between loudness and brightness. Individual differences in musical memory (detecting pitch changes in two sequences of notes) was related to the time taken to identify or recognise objects, but individual differences in self-reported vividness of visual imagery did not reliably predict performance across the experiments. In general, the results suggest that the auditory characteristics of the device may be more important for initial learning than visual associations.

Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

NASA Astrophysics Data System (ADS)

Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; May Lau, Kei

2015-03-01

We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED). To improve the breakdown characteristics of the integrated HEMT-LED devices, carbon doping was introduced in the HEMT buffer by controlling the growth pressure and V/III ratio. The breakdown voltage of the fabricated HEMTs grown on LEDs was enhanced, without degradation of the HEMT DC performance. The improved breakdown characteristics can be attributed to better isolation of the HEMT from the underlying conductive p-GaN layer of the LED structure.

Effect of cleaning procedures on the electrical properties of carbon nanotube transistors—A statistical study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tittmann-Otto, J., E-mail: jana.tittmann-otto@zfm.tu-chemnitz.de; Hermann, S.; Hartmann, M.

The interface between a carbon nanotube (CNT) and its environment can dramatically affect the electrical properties of CNT-based field-effect transistors (FETs). For such devices, the channel environment plays a significant role inducing doping or charge traps giving rise to hysteresis in the transistor characteristics. Thereby the fabrication process strongly determines the extent of those effects and the final device performance. In CNT-based devices obtained from dispersions, a proper individualization of the nanotubes is mandatory. This is generally realized by an ultrasonic treatment combined with surfactant molecules, which enwrap nanotubes forming micelle aggregates. To minimize impact on device performance, it ismore » of vital importance to consider post-deposition treatments for removal of surfactant molecules and other impurities. In this context, we investigated the effect of several wet chemical cleaning and thermal post treatments on the electrical characteristics as well as physical properties of more than 600 devices fabricated only by wafer-level compatible technologies. We observed that nitric acid and water treatments improved the maximum-current of devices. Additionally, we found that the ethanol treatment successfully lowered hysteresis in the transfer characteristics. The effect of the chemical cleaning procedures was found to be more significant on CNT-metal contacts than for the FET channels. Moreover, we investigated the effect of an additional thermal cleaning step under vacuum after the chemical cleaning, which had an exceptional impact on the hysteresis behavior including hysteresis reversal. The presence of surfactant molecules on CNT was evidenced by X-ray photoelectron and Raman spectroscopies. By identifying the role of surfactant molecules and assessing the enhancement of device performance as a direct consequence of several cleaning procedures, these results are important for the development of CNT-based electronics at the wafer-level.« less

Effect of cleaning procedures on the electrical properties of carbon nanotube transistors—A statistical study

NASA Astrophysics Data System (ADS)

Tittmann-Otto, J.; Hermann, S.; Kalbacova, J.; Hartmann, M.; Toader, M.; Rodriguez, R. D.; Schulz, S. E.; Zahn, D. R. T.; Gessner, T.

2016-03-01

The interface between a carbon nanotube (CNT) and its environment can dramatically affect the electrical properties of CNT-based field-effect transistors (FETs). For such devices, the channel environment plays a significant role inducing doping or charge traps giving rise to hysteresis in the transistor characteristics. Thereby the fabrication process strongly determines the extent of those effects and the final device performance. In CNT-based devices obtained from dispersions, a proper individualization of the nanotubes is mandatory. This is generally realized by an ultrasonic treatment combined with surfactant molecules, which enwrap nanotubes forming micelle aggregates. To minimize impact on device performance, it is of vital importance to consider post-deposition treatments for removal of surfactant molecules and other impurities. In this context, we investigated the effect of several wet chemical cleaning and thermal post treatments on the electrical characteristics as well as physical properties of more than 600 devices fabricated only by wafer-level compatible technologies. We observed that nitric acid and water treatments improved the maximum-current of devices. Additionally, we found that the ethanol treatment successfully lowered hysteresis in the transfer characteristics. The effect of the chemical cleaning procedures was found to be more significant on CNT-metal contacts than for the FET channels. Moreover, we investigated the effect of an additional thermal cleaning step under vacuum after the chemical cleaning, which had an exceptional impact on the hysteresis behavior including hysteresis reversal. The presence of surfactant molecules on CNT was evidenced by X-ray photoelectron and Raman spectroscopies. By identifying the role of surfactant molecules and assessing the enhancement of device performance as a direct consequence of several cleaning procedures, these results are important for the development of CNT-based electronics at the wafer-level.

Synaptic electronics: materials, devices and applications.

PubMed

Kuzum, Duygu; Yu, Shimeng; Wong, H-S Philip

2013-09-27

In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material properties and electrical switching characteristics of a variety of synaptic devices are discussed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing. Performance metrics desirable for large-scale implementations of synaptic devices are illustrated. A review of recent work on targeted computing applications with synaptic devices is presented.

INVESTIGATIONS INTO BIOFOULING PHENOMENA IN FINE PORE AERATION DEVICES

EPA Science Inventory

Microbiologically-based procedures were used to describe biofouling phenomena on fine pore aeration devices and to determine whether biofilm characteristics could be related to diffuser process performance parameters. Fine pore diffusers were obtained from five municipal wastewa...

Storm wave buoy equipped with micromechanical inertial unit: Results of development and testing

NASA Astrophysics Data System (ADS)

Gryazin, D. G.; Staroselcev, L. P.; Belova, O. O.; Gleb, K. A.

2017-07-01

The article describes the results of developing a wave buoy to measure the statistical characteristics of waves and the characteristics of directional spectra of three-dimensional waves. The device is designed for long-term measurements lasting up to a season, which can help solve problems in forecasting waves and preventing emergencies from wave impact on offshore platforms, hydraulic structures, and other marine facilities. The measuring unit involves triads of micromechanical gyroscopes, accelerometers, and a three-component magnetometer. A description of the device, results of laboratory research of its characteristics, and bench and full-scale tests are offered. It is noted that to assess the performance characteristics, comparative tests of the Storm wave buoy were conducted with a standard string wave probe installed on an offshore platform. It is shown that the characteristics and capabilities of the wave buoy make it possible to oust foreign devices from the domestic market.

Hybrid ZnO/phthalocyanine photovoltaic device with highly resistive ZnO intermediate layer.

PubMed

Izaki, Masanobu; Chizaki, Ryo; Saito, Takamasa; Murata, Kazufumi; Sasano, Junji; Shinagawa, Tsutomu

2013-10-09

We report a hybrid photovoltaic device composed of a 3.3 eV bandgap zinc oxide (ZnO) semiconductor and metal-free phthalocyanine layers and the effects of the insertion of the highly resistive ZnO buffer layer on the electrical characteristics of the rectification feature and photovoltaic performance. The hybrid photovoltaic devices have been constructed by electrodeposition of the 300 nm thick ZnO layer in a simple zinc nitrate aqueous solution followed by vacuum evaporation of 50-400 nm thick-phthalocyanine layers. The ZnO layers with the resistivity of 1.8 × 10(3) and 1 × 10(8) Ω cm were prepared by adjusting the cathodic current density and were installed into the hybrid photovoltaic devices as the n-type and buffer layer, respectively. The phthalocyanine layers with the characteristic monoclinic lattice showed a characteristic optical absorption feature regardless of the thickness, but the preferred orientation changed depending on the thickness. The ZnO buffer-free hybrid 50 nm thick phthalocyanine/n-ZnO photovoltaic device showed a rectification feature but possessed a poor photovoltaic performance with a conversion efficiency of 7.5 × 10(-7) %, open circuit voltage of 0.041 V, and short circuit current density of 8.0 × 10(-5) mA cm(-2). The insertion of the ZnO buffer layer between the n-ZnO and phthalocyanine layers induced improvements in both the rectification feature and photovoltaic performance. The excellent rectification feature with a rectification ratio of 3188 and ideally factor of 1.29 was obtained for the hybrid 200 nm thick phthalocyanine/ZnO buffer/n-ZnO photovoltaic device, and the hybrid photovoltaic device possessed an improved photovoltaic performance with the conversion efficiency of 0.0016%, open circuit voltage of 0.31 V, and short circuit current density of 0.015 mA cm(-2).

Hafnia-based resistive switching devices for non-volatile memory applications and effects of gamma irradiation on device performance

NASA Astrophysics Data System (ADS)

Arun, N.; Kumar, K. Vinod; Pathak, A. P.; Avasthi, D. K.; Nageswara Rao, S. V. S.

2018-04-01

Non-volatile memory (NVM) devices were fabricated as a Metal- Insulator-Metal (MIM) structures by sandwiching Hafnium dioxide (HfO2) thin film in between two metal electrodes. The top and bottom metal electrodes were deposited by using the thermal evaporation, and the oxide layer was deposited by using the RF magnetron sputtering technique. The Resistive Random Access Memory (RRAM) device structures such as Ag/HfO2/Au/Si were fabricated and I-V characteristics for the pristine and gamma-irradiated devices with a dose 24 kGy were measured. Further we have studied the thermal annealing effects, in the range of 100°-400°C in a tubular furnace for the HfO2/Au/Si samples. The X-ray diffraction (XRD), Rutherford Backscattering Spectrometry (RBS), field emission-scanning electron microscopy (FESEM) analysis measurements were performed to determine the thickness, crystallinity and stoichiometry of these films. The electrical characteristics such as resistive switching, endurance, retention time and switching speed were measured by a semiconductor device analyser. The effects of gamma irradiation on the switching properties of these RRAM devices have been studied.

Performance regeneration of InGaZnO transistors with ultra-thin channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Binglei; Li, He; Zhang, Xijian, E-mail: zhangxijian@sdu.edu.cn, E-mail: songam@sdu.edu.cn

2015-03-02

Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devicesmore » was also studied over a four month period.« less

Performance testing of supercapacitors: Important issues and uncertainties

NASA Astrophysics Data System (ADS)

Zhao, Jingyuan; Gao, Yinghan; Burke, Andrew F.

2017-09-01

Supercapacitors are a promising technology for high power energy storage, which have been used in some industrial and vehicles applications. Hence, it is important that information concerning the performance of supercapacitors be detailed and reliable so system designers can make rational decisions regarding the selection of the energy storage components. This paper is concerned with important issues and uncertainties regarding the performance testing of supercapacitors. The effect of different test procedures on the measured characteristics of both commercial and prototype supercapacitors including hybrid supercapacitors have been studied. It was found that the test procedure has a relatively minor effect on the capacitance of carbon/carbon devices and a more significant effect on the capacitance of hybrid supercapacitors. The device characteristic with the greatest uncertainty is the resistance and subsequently the claimed power capability of the device. The energy density should be measured by performing constant power discharges between appropriate voltage limits. This is particularly important in the case of hybrid supercapacitors for which the energy density is rate dependent and the simple relationship E = ½CV2 does not yield accurate estimates of the energy stored. In general, most of the important issues for testing carbon/carbon devices become more serious for hybrid supercapacitors.

A solution for exposure tool optimization at the 65-nm node and beyond

NASA Astrophysics Data System (ADS)

Itai, Daisuke

2007-03-01

As device geometries shrink, tolerances for critical dimension, focus, and overlay control decrease. For the stable manufacture of semiconductor devices at (and beyond) the 65nm node, both performance variability and drift in exposure tools are no longer negligible factors. With EES (Equipment Engineering System) as a guidepost, hopes of improving productivity of semiconductor manufacturing are growing. We are developing a system, EESP (Equipment Engineering Support Program), based on the concept of EES. The EESP system collects and stores large volumes of detailed data generated from Canon lithographic equipment while product is being manufactured. It uses that data to monitor both equipment characteristics and process characteristics, which cannot be examined without this system. The goal of EESP is to maximize equipment capabilities, by feeding the result back to APC/FDC and the equipment maintenance list. This was a collaborative study of the system's effectiveness at the device maker's factories. We analyzed the performance variability of exposure tools by using focus residual data. We also attempted to optimize tool performance using the analyzed results. The EESP system can make the optimum performance of exposure tools available to the device maker.

21 CFR 814.20 - Application.

Code of Federal Regulations, 2013 CFR

2013-04-01

... include separate sections on nonclinical laboratory studies and on clinical investigations involving human... the device, and the significant physical and performance characteristics of the device. A brief... other person. (v) Summary of studies. An abstract of any information or report described in the PMA...

21 CFR 814.20 - Application.

Code of Federal Regulations, 2011 CFR

2011-04-01

... include separate sections on nonclinical laboratory studies and on clinical investigations involving human... the device, and the significant physical and performance characteristics of the device. A brief... other person. (v) Summary of studies. An abstract of any information or report described in the PMA...

21 CFR 814.20 - Application.

Code of Federal Regulations, 2012 CFR

2012-04-01

... include separate sections on nonclinical laboratory studies and on clinical investigations involving human... the device, and the significant physical and performance characteristics of the device. A brief... other person. (v) Summary of studies. An abstract of any information or report described in the PMA...

Regulatory perspectives and research activities at the FDA on the use of phantoms with in vivo diagnostic devices

NASA Astrophysics Data System (ADS)

Agrawal, Anant; Gavrielides, Marios A.; Weininger, Sandy; Chakrabarti, Kish; Pfefer, Joshua

2008-02-01

For a number of years, phantoms have been used to optimize device parameters and validate performance in the primary medical imaging modalities (CT, MRI, PET/SPECT, ultrasound). Furthermore, the FDA under the Mammography Quality Standards Act (MQSA) requires image quality evaluation of mammography systems using FDA-approved phantoms. The oldest quantitative optical diagnostic technology, pulse oximetry, also benefits from the use of active phantoms known as patient simulators to validate certain performance characteristics under different clinically-relevant conditions. As such, guidance provided by the FDA to its staff and to industry on the contents of pre-market notification and approval submissions includes suggestions on how to incorporate the appropriate phantoms in establishing device effectiveness. Research at the FDA supports regulatory statements on the use of phantoms by investigating how phantoms can be designed, characterized, and utilized to determine critical device performance characteristics. These examples provide a model for how novel techniques in the rapidly growing field of optical diagnostics can use phantoms during pre- and post-market regulatory testing.

The Measurement of Spectral Characteristics and Composition of Radiation in Atlas with MEDIPIX2-USB Devices

NASA Astrophysics Data System (ADS)

Campbell, M.; Doležal, Z.; Greiffenberg, D.; Heijne, E.; Holy, T.; Idárraga, J.; Jakůbek, J.; Král, V.; Králík, M.; Lebel, C.; Leroy, C.; Llopart, X.; Lord, G.; Maneuski, D.; Ouellette, O.; Sochor, V.; Pospíšil, S.; Suk, M.; Tlustos, L.; Vykydal, Z.; Wilhelm, I.

2008-06-01

A network of devices to perform real-time measurements of the spectral characteristics and composition of radiation in the ATLAS detector and cavern during its operation is being built. This system of detectors will be a stand alone system fully capable of delivering real-time images of fluxes and spectral composition of different particle species including slow and fast neutrons. The devices are based on MEDIPIX2 pixel silicon detectors that will be operated via active USB cables and USB-Ethernet extenders through an Ethernet network by a PC located in the USA15 ATLAS control room. The installation of 14 devices inside ATLAS (detector and cavern) is in progress.

High-performance flexible resistive memory devices based on Al2O3:GeOx composite

NASA Astrophysics Data System (ADS)

Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

2018-05-01

In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

Design and performance of 4 x 5120-element visible and 2 x 2560-element shortwave infrared multispectral focal planes

NASA Astrophysics Data System (ADS)

Tower, J. R.; Cope, A. D.; Pellon, L. E.; McCarthy, B. M.; Strong, R. T.

1986-06-01

Two solid-state sensors for use in remote sensing instruments operating in the pushbroom mode are examined. The design and characteristics of the visible/near-infrared (VIS/NIR) device and the short-wavelength infrared (SWIR) device are described. The VIS/NIR is a CCD imager with four parallel sensor lines, each 1024 pixel long; the chip design and filter system of the VIS/NIR are studied. The performance of the VIS/NIR sensor with mask and its system performance are measured. The SWIR is a dual-band line imager consisting of palladium silicide Schottky-barrier detectors coupled to CCD multiplexers; the performance of the device is analyzed. The substrate materials and layout designs used to assemble the 4 x 5120-element VIS/NIR array and the 2 x 2560-element SWIR array are discussed, and the planarity of the butted arrays are verified using a profilometer. The optical and electrical characteristics, and the placement and butting accuracy of the arrays are evaluated. It is noted that the arrays met or exceed their expected performance.

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Alterovitz, Samuel A.; Katehi, Linda P. B.; Bhattacharya, Pallab K.

1997-01-01

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se.

PubMed

Shin, Sang-Yeol; Choi, J M; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun

2014-11-18

The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge(0.6)Se(0.4) (in atomic mole fraction) film and its characteristics as to OTS devices. From the optical absorption spectroscopy measurement, the band gap (Eg) was found to decrease with increasing Sb content. In addition, as Sb content increased, the activation energy (Ea) for electrical conduction was found to decrease down to about one third of Eg from a half. As to the device characteristics, we found that the threshold switching voltage (Vth) drastically decreased with the Sb content. These results, being accountable in terms of the changes in the bonding configuration of constituent atoms as well as in the electronic structure such as the energy gap and trap states, advance an effective method of compositional adjustment to modulate Vth of an OTS device for various applications.

Characterization of a prototype MR-compatible Delta4 QA system in a 1.5 tesla MR-linac

NASA Astrophysics Data System (ADS)

de Vries, J. H. W.; Seravalli, E.; Houweling, A. C.; Woodings, S. J.; van Rooij, R.; Wolthaus, J. W. H.; Lagendijk, J. J. W.; Raaymakers, B. W.

2018-01-01

To perform patient plan quality assurance (QA) on a newly installed MR-linac (MRL) it is necessary to have an MR-compatible QA device. An MR compatible device (MR-Delta4) has been developed together with Scandidos AB (Uppsala, Sweden). The basic characteristics of the detector response, such as short-term reproducibility, dose linearity, field size dependency, dose rate dependency, dose-per-pulse dependency and angular dependency, were investigated for the clinical Delta4-PT as well as for the MR compatible version. All tests were performed with both devices on a conventional linac and the MR compatible device was tested on the MRL as well. No statistically significant differences were found in the short-term reproducibility (<0.1%), dose linearity (⩽0.5%), field size dependency (<2.0% for field sizes larger than 5  ×  5 cm2), dose rate dependency (<1.0%) or angular dependency for any phantom/linac combination. The dose-per-pulse dependency (<0.8%) was found to be significantly different between the two devices. This difference can be explained by the fact that the diodes in the clinical Delta4-PT were irradiated with a much larger dose than the MR-Delta4-PT ones. The absolute difference between the devices (<0.5%) was found to be small, so no clinical impact is expected. For both devices, the results were consistent with the characteristics of the Delta4-PT device reported in the literature (Bedford et al 2009 Phys. Med. Biol. 54 N167-76 Sadagopan et al 2009 J. Appl. Clin. Med. Phys. 10 2928). We found that the characteristics of the MR compatible Delta4 phantom were found to be comparable to the clinically used one. Also, the found characteristics do not differ from the previously reported characteristics of the commercially available non-MR compatible Delta4-PT phantom. Therefore, the MR compatible Delta4 prototype was found to be safe and effective for use in the 1.5 tesla magnetic field of the Elekta MR-linac

New Concentric Electrode Metal-Semiconductor-Metal Photodetectors

NASA Technical Reports Server (NTRS)

Towe, Elias

1996-01-01

A new metal-semiconductor-metal (MSM) photodetector geometry is proposed. The new device has concentric metal electrodes which exhibit a high degree of symmetry and a design flexibility absent in the conventional MSM device. The concentric electrodes are biased to alternating potentials as in the conventional interdigitated device. Because of the high symmetry configuration, however, the new device also has a lower effective capacitance. This device and the conventional MSM structure are analyzed within a common theoretical framework which allows for the comparison of the important performance characteristics.

Treatment of an ostial and a bifurcation lesion with a new directional atherectomy device

PubMed Central

Favero, L; Simpson, J B; Reimers, B

2004-01-01

Two cases of directional coronary atherectomy performed with a new 8 French monorail device for selective plaque excision are illustrated. This report underlines the technical characteristics of this new device, which allows the negotiation of complex coronary anatomy and emphasises the potential utility of directional coronary atherectomy in bifurcation and ostial lesions. PMID:15253988

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred J; Motala, Michael; Ahn, Jong-Hyun; Park, Sang-Il; Yu, Chang-Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

2014-05-13

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John [Champaign, IL; Nuzzo, Ralph [Champaign, IL; Meitl, Matthew [Durham, NC; Menard, Etienne [Durham, NC; Baca, Alfred J [Urbana, IL; Motala, Michael [Champaign, IL; Ahn, Jong-Hyun [Suwon, KR; Park, Sang-II [Savoy, IL; Yu,; Chang-Jae, [Urbana, IL; Ko, Heung-Cho [Gwangju, KR; Stoykovich,; Mark, [Dover, NH; Yoon, Jongseung [Urbana, IL

2011-07-05

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred; Motala, Michael; Ahn, Jong -Hyun; Park, Sang -Il; Yu, Chang -Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

2015-08-25

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred; Motala, Michael; Ahn, Jong-Hyun; Park, Sang-Il; Yu, Chang-Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

2017-03-21

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Analysis of a digital RF memory in a signal-delay application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jelinek, D.A.

1992-03-01

Laboratory simulation of the approach of a radar fuze towards a target is an important factor in our ability to accurately measure the radar's performance. This simulation is achieved, in part, by dynamically delaying and attenuating the radar's transmitted pulse and sending the result back to the radar's receiver. Historically, the device used to perform the dynamic delay has been a limiting factor in the evaluation of a radar's performance and characteristics. A new device has been proposed that appears to have more capability than previous dynamic delay devices. This device is the digital RF memory. This report presents themore » results of an analysis of a digital RF memory used in a signal-delay application. 2 refs.« less

Highway Vehicle Retrofit Evaluation : Phase I. Analysis and Preliminary Evaluation Results. Volume 1. Sections 1 through 3.

DOT National Transportation Integrated Search

1975-11-01

This report in two volumes presents an analysis and preliminary evaluation of selected used-car and light-truck fuel economy retrofit devices. In particular, information is provided that depicts the performance characteristics of retrofit devices tha...

Effect of Sensors on the Reliability and Control Performance of Power Circuits in the Web of Things (WoT)

PubMed Central

Bae, Sungwoo; Kim, Myungchin

2016-01-01

In order to realize a true WoT environment, a reliable power circuit is required to ensure interconnections among a range of WoT devices. This paper presents research on sensors and their effects on the reliability and response characteristics of power circuits in WoT devices. The presented research can be used in various power circuit applications, such as energy harvesting interfaces, photovoltaic systems, and battery management systems for the WoT devices. As power circuits rely on the feedback from voltage/current sensors, the system performance is likely to be affected by the sensor failure rates, sensor dynamic characteristics, and their interface circuits. This study investigated how the operational availability of the power circuits is affected by the sensor failure rates by performing a quantitative reliability analysis. In the analysis process, this paper also includes the effects of various reconstruction and estimation techniques used in power processing circuits (e.g., energy harvesting circuits and photovoltaic systems). This paper also reports how the transient control performance of power circuits is affected by sensor interface circuits. With the frequency domain stability analysis and circuit simulation, it was verified that the interface circuit dynamics may affect the transient response characteristics of power circuits. The verification results in this paper showed that the reliability and control performance of the power circuits can be affected by the sensor types, fault tolerant approaches against sensor failures, and the response characteristics of the sensor interfaces. The analysis results were also verified by experiments using a power circuit prototype. PMID:27608020

Design and performance characteristics of a mechanically driven vestibular stimulator.

DOT National Transportation Integrated Search

1964-01-01

In order to determine basic response characteristics of mammalian vestibular systems, the sytems so important for spatial orientation, a device to provide programs of controlled angular accelerations about the vertical axis was required. The small ro...

Accessory Devices Frequently Used for Endoscopic Submucosal Dissection

PubMed Central

Choi, Hyuk Soon; Chun, Hoon Jai

2017-01-01

Endoscopic submucosal dissection (ESD) is increasingly being considered an essential component of treatment for early gastrointestinal cancers and subepithelial tumors. The ESD technique owes its popularity to the development of sophisticated instruments used for ESD. With an increase in the number of ESD procedures performed, there is rapid development in the number and types of endoscopic accessory devices used for such procedures. Despite the large numbers of new devices developed and marketed, the use of ESD instruments and accessory devices is largely determined by individual preferences and experiences. Accessory devices frequently used during ESD are important tools for ESD techniques. Each instrument possesses characteristic advantages and disadvantages associated with its use, and no one instrument is superior in all respects to others. In this article, we review the characteristics of endoscopic electrical knives, cap and hood, and hemostatic devices commonly used in ESD. PMID:28609818

Characterization of crosstalk in stereoscopic display devices.

PubMed

Zafar, Fahad; Badano, Aldo

2014-12-01

Many different types of stereoscopic display devices are used for commercial and research applications. Stereoscopic displays offer the potential to improve performance in detection tasks for medical imaging diagnostic systems. Due to the variety of stereoscopic display technologies, it remains unclear how these compare with each other for detection and estimation tasks. Different stereo devices have different performance trade-offs due to their display characteristics. Among them, crosstalk is known to affect observer perception of 3D content and might affect detection performance. We measured and report the detailed luminance output and crosstalk characteristics for three different types of stereoscopic display devices. We recorded the effect of other issues on recorded luminance profiles such as viewing angle, use of different eye wear, and screen location. Our results show that the crosstalk signature for viewing 3D content can vary considerably when using different types of 3D glasses for active stereo displays. We also show that significant differences are present in crosstalk signatures when varying the viewing angle from 0 degrees to 20 degrees for a stereo mirror 3D display device. Our detailed characterization can help emulate the effect of crosstalk in conducting computational observer image quality assessment evaluations that minimize costly and time-consuming human reader studies.

Optical-to-optical interface device. [consisting of two transparent electrodes on glass substrates that enclose thin film photoconductor and thin layer of nematic liquid crystal

NASA Technical Reports Server (NTRS)

Jacobson, A. D.

1973-01-01

Studies were conducted on the performance of a photoactivated dc liquid crystal light valve. The dc light valve is a thin film device that consists of two transparent electrodes, deposited on glass substrates, that enclose a thin film photoconductor (cadmium sulfide) and a thin layer of a nematic liquid crystal that operates in the dynamic scattering mode. The work was directed toward application of the light valve to high resolution non-coherent light to coherent light image conversion. The goal of these studies was to improve the performance and quality of the already existing dc light valve device and to evaluate quantitatively the properties and performance of the device as they relate to the coherent optical data processing application. As a result of these efforts, device sensitivity was improved by a factor of ten, device resolution was improved by a factor of three, device lifetime was improved by two-orders of magnitude, undesirable secondary liquid crystal scattering effects were eliminated, the scattering characteristics of the liquid crystal were thoroughly documented, the cosmetic quality of the devices was dramatically improved, and the performance of the device was fully documented.

System for characterizing semiconductor materials and photovoltaic devices through calibration

DOEpatents

Sopori, Bhushan L.; Allen, Larry C.; Marshall, Craig; Murphy, Robert C.; Marshall, Todd

1998-01-01

A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.

System for characterizing semiconductor materials and photovoltaic devices through calibration

DOEpatents

Sopori, B.L.; Allen, L.C.; Marshall, C.; Murphy, R.C.; Marshall, T.

1998-05-26

A method and apparatus are disclosed for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby. 44 figs.

Error reduction by combining strapdown inertial measurement units in a baseball stitch

NASA Astrophysics Data System (ADS)

Tracy, Leah

A poor musical performance is rarely due to an inferior instrument. When a device is under performing, the temptation is to find a better device or a new technology to achieve performance objectives; however, another solution may be improving how existing technology is used through a better understanding of device characteristics, i.e., learning to play the instrument better. This thesis explores improving position and attitude estimates of inertial navigation systems (INS) through an understanding of inertial sensor errors, manipulating inertial measurement units (IMUs) to reduce that error and multisensor fusion of multiple IMUs to reduce error in a GPS denied environment.

21 CFR 814.20 - Application.

Code of Federal Regulations, 2014 CFR

2014-04-01

... laboratory studies and on clinical investigations involving human subjects. A PMA shall be submitted in six... physical and performance characteristics of the device. A brief description of the manufacturing process... and, if known, the history of the marketing of the device by any other person. (v) Summary of studies...

Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

PubMed

Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

2013-10-04

Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

Advanced analytical modeling of double-gate Tunnel-FETs - A performance evaluation

NASA Astrophysics Data System (ADS)

Graef, Michael; Hosenfeld, Fabian; Horst, Fabian; Farokhnejad, Atieh; Hain, Franziska; Iñíguez, Benjamín; Kloes, Alexander

2018-03-01

The Tunnel-FET is one of the most promising devices to be the successor of the standard MOSFET due to its alternative current transport mechanism, which allows a smaller subthreshold slope than the physically limited 60 mV/dec of the MOSFET. Recently fabricated devices show smaller slopes already but mostly not over multiple decades of the current transfer characteristics. In this paper the performance limiting effects, occurring during the fabrication process of the device, such as doping profiles and midgap traps are analyzed by physics-based analytical models and their performance limiting abilities are determined. Additionally, performance enhancing possibilities, such as hetero-structures and ambipolarity improvements are introduced and discussed. An extensive double-gate n-Tunnel-FET model is presented, which meets the versatile device requirements and shows a good fit with TCAD simulations and measurement data.

High Performance Polymer Memory and Its Formation

DTIC Science & Technology

2007-04-26

the retention time of the device was performed to estimate the barrier height of the charge trap . The activation energy was approximated to be about...characteristics and presented a model to explain the mechanism of electrical switching in the device. By exploiting an electric-field induced charge transfer...electrical current in the high conductivity state would be due to some temperature-independent charge tunneling processes. The IV curves could be

Charge-coupled device image sensor study

NASA Technical Reports Server (NTRS)

1973-01-01

The design specifications and predicted performance characteristics of a Charge-Coupled Device Area Imager and a Charge-Coupled Device Linear Imager are presented. The Imagers recommended are intended for use in space-borne imaging systems and therefore would meet the requirements for the intended application. A unique overlapping metal electrode structure and a buried channel structure are described. Reasons for the particular imager designs are discussed.

Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM

NASA Astrophysics Data System (ADS)

Seo, Youngsoo; Kim, Shinkeun; Ko, Kyul; Woo, Changbeom; Kim, Minsoo; Lee, Jangkyu; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

In this paper, electrical characteristics of gate-all-around (GAA) nanoplate (NP) vertical FET (VFET) were analyzed for single transistor and 6T-SRAM cell through 3D technology computer-aided design (TCAD) simulation. In VFET, gate and extension lengths are not limited by the area of device because theses lengths are vertically located. The height of NP is assumed in 40 nm considering device fabrication method (top-down approach). According to the sizes of devices, we analyzed the performances of device such as total resistance, capacitance, intrinsic gate delay, sub-threshold swing (S.S), drain-induced barrier lowering (DIBL) and static noise margin (SNM). As the gate length becomes larger, the resistance should be smaller because the total height of NP is fixed in 40 nm. Also, when the channel thickness becomes thicker, the total resistance becomes smaller since the sheet resistances of channel and extension become smaller and the contact resistance becomes smaller due to the increasing contact area. In addition, as the length of channel pitch increases, the parasitic capacitance comes to be larger due to the increasing area of gate-drain and gate-source. The performance of RC delay is best in the shortest gate length (12 nm), the thickest channel (6 nm) and the shortest channel pitch (17 nm) owing to the reduced resistance and parasitic capacitance. However, the other performances such as DIBL, S.S, on/off ratio and SNM are worst because the short channel effect is highest in this situation. Also, we investigated the performance of the multi-channel device. As the number of channels increases, the performance of device and the reliability of SRAM improve because of reduced contact resistance, increased gate dimension and multi-channel compensation effect.

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

NASA Astrophysics Data System (ADS)

Jeon, Jun-Young; Ha, Tae-Jun

2017-08-01

In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Improvement of multi-level resistive switching characteristics in solution-processed AlO x -based non-volatile resistive memory using microwave irradiation

NASA Astrophysics Data System (ADS)

Kim, Seung-Tae; Cho, Won-Ju

2018-01-01

We fabricated a resistive random access memory (ReRAM) device on a Ti/AlO x /Pt structure with solution-processed AlO x switching layer using microwave irradiation (MWI), and demonstrated multi-level cell (MLC) operation. To investigate the effect of MWI power on the MLC characteristics, post-deposition annealing was performed at 600-3000 W after AlO x switching layer deposition, and the MLC operation was compared with as-deposited (as-dep) and conventional thermally annealing (CTA) treated devices. All solution-processed AlO x -based ReRAM devices exhibited bipolar resistive switching (BRS) behavior. We found that these devices have four-resistance states (2 bits) of MLC operation according to the modulation of the high-resistance state (HRSs) through reset voltage control. Particularly, compared to the as-dep and CTA ReRAM devices, the MWI-treated ReRAM devices showed a significant increase in the memory window and stable endurance for multi-level operation. Moreover, as the MWI power increased, excellent MLC characteristics were exhibited because the resistance ratio between each resistance state was increased. In addition, it exhibited reliable retention characteristics without deterioration at 25 °C and 85 °C for 10 000 s. Finally, the relationship between the chemical characteristics of the solution-processed AlO x switching layer and BRS-based multi-level operation according to the annealing method and MWI power was investigated using x-ray photoelectron spectroscopy.

Selective excitation of window and buffer layers in chalcopyrite devices and modules

DOE PAGES

Glynn, Stephen; Repins, Ingrid L.; Burst, James M.; ...

2018-02-02

Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects ofmore » the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. Furthermore, this provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.« less

Selective excitation of window and buffer layers in chalcopyrite devices and modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glynn, Stephen; Repins, Ingrid L.; Burst, James M.

Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects ofmore » the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. Furthermore, this provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.« less

Removing the current-limit of vertical organic field effect transistors

NASA Astrophysics Data System (ADS)

Sheleg, Gil; Greenman, Michael; Lussem, Bjorn; Tessler, Nir

2017-11-01

The reported Vertical Organic Field Effect Transistors (VOFETs) show either superior current and switching speeds or well-behaved transistor performance, especially saturation in the output characteristics. Through the study of the relationship between the device architecture or dimensions and the device performance, we find that achieving a saturation regime in the output characteristics requires that the device operates in the injection limited regime. In current structures, the existence of the injection limited regime depends on the source's injection barrier as well as on the buried semiconductor layer thickness. To overcome the injection limit imposed by the necessity of injection barrier, we suggest a new architecture to realize VOFETs. This architecture shows better gate control and is independent of the injection barrier at the source, thus allowing for several A cm-2 for a semiconductor having a mobility value of 0.1 cm2 V-1 s-1.

The effects of human finger and Chinese character on Chinese handwriting performance on mobile touch devices.

PubMed

Chen, Zhe; Rau, Pei-Luen Patrick; Chen, Cuiling

2014-05-01

The aim of the present study is to investigate Chinese handwriting on mobile touch devices, considering the effects of three characteristics of the human finger (type, length, and width) and three characteristics of Chinese characters (direction of the first stroke, number of strokes, and structure). Due to the popularity of touch devices in recent years, finger input for Chinese characters has attracted more attention from both industry and academia. However, previous studies have no systematical consideration on the effects of human finger and Chinese characters on Chinese handwriting performance. An experiment was reported in this article to illustrate the effects of the human finger and Chinese characters on the Chinese handwriting performance (i.e., input time, accuracy, number of protruding strokes, mental workload, satisfaction, and physical fatigue). The experiment results indicated that all six factors have significant effects on Chinese handwriting performance, especially on the input time, accuracy, and number of protruding strokes. Finger type, finger length, finger width, direction of the first stroke, number of strokes, and character structures are significantly influencing Chinese handwriting performance. These factors should be taken into more consideration in future research and the practical design for Chinese handwriting systems.

Analysis of a digital RF memory in a signal-delay application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jelinek, D.A.

1992-03-01

Laboratory simulation of the approach of a radar fuze towards a target is an important factor in our ability to accurately measure the radar`s performance. This simulation is achieved, in part, by dynamically delaying and attenuating the radar`s transmitted pulse and sending the result back to the radar`s receiver. Historically, the device used to perform the dynamic delay has been a limiting factor in the evaluation of a radar`s performance and characteristics. A new device has been proposed that appears to have more capability than previous dynamic delay devices. This device is the digital RF memory. This report presents themore » results of an analysis of a digital RF memory used in a signal-delay application. 2 refs.« less

Computer modeling of a two-junction, monolithic cascade solar cell

NASA Technical Reports Server (NTRS)

Lamorte, M. F.; Abbott, D.

1979-01-01

The theory and design criteria for monolithic, two-junction cascade solar cells are described. The departure from the conventional solar cell analytical method and the reasons for using the integral form of the continuity equations are briefly discussed. The results of design optimization are presented. The energy conversion efficiency that is predicted for the optimized structure is greater than 30% at 300 K, AMO and one sun. The analytical method predicts device performance characteristics as a function of temperature. The range is restricted to 300 to 600 K. While the analysis is capable of determining most of the physical processes occurring in each of the individual layers, only the more significant device performance characteristics are presented.

Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

NASA Astrophysics Data System (ADS)

Mangasa Simanjuntak, Firman; Singh, Pragya; Chandrasekaran, Sridhar; Juanda Lumbantoruan, Franky; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen

2017-12-01

An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.

Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

NASA Astrophysics Data System (ADS)

Ha, Tae-Jun

2015-03-01

Metal-oxide based thin-film transistors (oxide-TFTs) are very promising for use in next generation electronics such as transparent displays requiring high switching and driving performance. In this study, we demonstrate an optimized process to secure excellent device performance with a favorable shift of the threshold voltage toward 0V in amorphous hafnium-indium-zinc-oxide (a-HfIZO) TFTs by using post-treatment with oxygen annealing. This enhancement results from the improved interfacial characteristics between gate dielectric and semiconductor layers due to the reduction in the density of interfacial states related to oxygen vacancies afforded by oxygen annealing. The device statistics confirm the improvement in the device-to-device and run-to-run uniformity. We also report on the photo-induced stability in such oxide-TFTs against long-term UV irradiation, which is significant for transparent displays.

The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se

PubMed Central

Shin, Sang-Yeol; Choi, J. M.; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun

2014-01-01

The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge0.6Se0.4 (in atomic mole fraction) film and its characteristics as to OTS devices. From the optical absorption spectroscopy measurement, the band gap (Eg) was found to decrease with increasing Sb content. In addition, as Sb content increased, the activation energy (Ea) for electrical conduction was found to decrease down to about one third of Eg from a half. As to the device characteristics, we found that the threshold switching voltage (Vth) drastically decreased with the Sb content. These results, being accountable in terms of the changes in the bonding configuration of constituent atoms as well as in the electronic structure such as the energy gap and trap states, advance an effective method of compositional adjustment to modulate Vth of an OTS device for various applications. PMID:25403772

Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Philip M., E-mail: philip.campbell@gatech.edu; Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332; Tarasov, Alexey

Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs),more » separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.« less

Indium-gallium-zinc-oxide thin-film transistor with a planar split dual-gate structure

NASA Astrophysics Data System (ADS)

Liu, Yu-Rong; Liu, Jie; Song, Jia-Qi; Lai, Pui-To; Yao, Ruo-He

2017-12-01

An amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from 4.0 × 10-6S to 1.6 × 10-5S for a change of control gate voltage from -2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.

Optical modeling based on mean free path calculations for quantum dot phosphors applied to optoelectronic devices.

PubMed

Shin, Min-Ho; Kim, Hyo-Jun; Kim, Young-Joo

2017-02-20

We proposed an optical simulation model for the quantum dot (QD) nanophosphor based on the mean free path concept to understand precisely the optical performance of optoelectronic devices. A measurement methodology was also developed to get the desired optical characteristics such as the mean free path and absorption spectra for QD nanophosphors which are to be incorporated into the simulation. The simulation results for QD-based white LED and OLED displays show good agreement with the experimental values from the fabricated devices in terms of spectral power distribution, chromaticity coordinate, CCT, and CRI. The proposed simulation model and measurement methodology can be applied easily to the design of lots of optoelectronics devices using QD nanophosphors to obtain high efficiency and the desired color characteristics.

Improved model for detection of homogeneous production batches of electronic components

NASA Astrophysics Data System (ADS)

Kazakovtsev, L. A.; Orlov, V. I.; Stashkov, D. V.; Antamoshkin, A. N.; Masich, I. S.

2017-10-01

Supplying the electronic units of the complex technical systems with electronic devices of the proper quality is one of the most important problems for increasing the whole system reliability. Moreover, for reaching the highest reliability of an electronic unit, the electronic devices of the same type must have equal characteristics which assure their coherent operation. The highest homogeneity of the characteristics is reached if the electronic devices are manufactured as a single production batch. Moreover, each production batch must contain homogeneous raw materials. In this paper, we propose an improved model for detecting the homogeneous production batches of shipped lot of electronic components based on implementing the kurtosis criterion for the results of non-destructive testing performed for each lot of electronic devices used in the space industry.

Performance characteristics of plane-wall venturi-like reverse flow diverters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, G.V.; Counce, R.M.

1984-02-01

The results of an analytical and experimental study of plane-wall venturi-like reverse flow diverters (RFD) are presented. In general, the flow characteristics of the RFD are reasonably well predicted by the mathematical model of the RFD, although a divergence between theory and data is observed for the output characteristics in the reverse flow mode as the output impedance is reduced. Overall, the performance of these devices indicates their usefulness in fluid control and fluid power systems, such as displacement pumping systems.

Performance characteristics of plane-wall venturi-like reverse flow diverters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, G.V.; Counce, R.M.

1982-01-01

The results of an analytical and experimental study of plane-wall venturi-like reverse flow diverters (RFD) are presented. In general, the flow characteristics of the RFD are reasonably well predicted by the mathematical model of the RFD, although a divergence between theory and data is observed for the output characteristics in the reverse flow mode as the output impedance is reduced. Overall, the performance of these devices indicates their usefulness in fluid control and fluid power systems, such as displacement pumping systems.

A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device

NASA Astrophysics Data System (ADS)

Guo, Tao; Sun, Bai; Mao, Shuangsuo; Zhu, Shouhui; Xia, Yudong; Wang, Hongyan; Zhao, Yong; Yu, Zhou

2018-03-01

In this work, the Cu(In1-xGax)Se2 (CIGS), Al doped ZnO (AZO) and Mo has been used for constructing a resistive switching device with AZO/CIGS/Mo sandwich structure grown on a transparent glass substrate. The device represents a high-performance memory characteristics under ambient temperature. In particularly, a resistance ratio change phenomenon have been observed in our device for the first time.

76 FR 72951 - Guidance for Industry and Food and Drug Administration Staff; Establishing the Performance...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-28

... recommendations for studies to establish the performance characteristics of in vitro diagnostic devices (IVDs... issuing this guidance to provide industry and Agency staff with recommendations for studies to establish...

Interface engineering in high-performance low-voltage organic thin-film transistors based on 2,7-dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes.

PubMed

Amin, Atefeh Y; Reuter, Knud; Meyer-Friedrichsen, Timo; Halik, Marcus

2011-12-20

We investigated two different (2,7-dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes; C(n)-BTBT-C(n), where n = 12 or 13) semiconductors in low-voltage operating thin-film transistors. By choosing functional molecules in nanoscaled hybrid dielectric layers, we were able to tune the surface energy and improve device characteristics, such as leakage current and hysteresis. The dipolar nature of the self-assembled molecules led to a shift in the threshold voltage. All devices exhibited high charge carrier mobilities of 0.6-7.0 cm(2) V(-1) s(-1). The thin-film morphology of BTBT was studied by means of atomic force microscopy (AFM), presented a dependency upon the surface energy of the self-assembled monolayer (SAM) hybrid dielectrics but not upon the device performance. The use of C(13)-BTBT-C(13) on hybrid dielectrics of AlO(x) and a F(15)C(18)-phosphonic acid monolayer led to devices with a hole mobility of 1.9 cm(2) V(-1) s(-1) at 3 V, on/off ratio of 10(5), small device-device variation of mobility, and a threshold voltage of only -0.9 V, thus providing excellent characteristics for further integration. © 2011 American Chemical Society

Device characterization and optimization of small molecule organic solar cells assisted by modelling simulation of the current-voltage characteristics.

PubMed

Zuo, Yi; Wan, Xiangjian; Long, Guankui; Kan, Bin; Ni, Wang; Zhang, Hongtao; Chen, Yongsheng

2015-07-15

In order to understand the photovoltaic performance differences between the recently reported DR3TBTT-HD and DR3TBDT2T based solar cells, a modified two-diode model with Hecht equation was built to simulate the corresponding current-voltage characteristics. The simulation results reveal that the poor device performance of the DR3TBDTT-HD based device mainly originated from its insufficient charge transport ability, where an average current of 5.79 mA cm(-2) was lost through this pathway at the maximum power point for the DR3TBDTT-HD device, nearly three times as large as that of the DR3TBDT2T based device under the same device fabrication conditions. The morphology studies support these simulation results, in which both Raman and 2D-GIXD data reveal that DR3TBTT-HD based blend films exhibit lower crystallinity. Spin coating at low temperature was used to increase the crystallinity of DR3TBDTT-HD based blend films, and the average current loss through insufficient charge transport at maximum power point was suppressed to 2.08 mA cm(-2). As a result, the average experimental power conversion efficiency of DR3TBDTT-HD based solar cells increased by over 40%.

Impacts of Co doping on ZnO transparent switching memory device characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simanjuntak, Firman Mangasa; Wei, Kung-Hwa; Prasad, Om Kumar

2016-05-02

The resistive switching characteristics of indium tin oxide (ITO)/Zn{sub 1−x}Co{sub x}O/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnOmore » device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.« less

Improving performance of armchair graphene nanoribbon field effect transistors via boron nitride doping

NASA Astrophysics Data System (ADS)

Goharrizi, A. Yazdanpanah; Sanaeepur, M.; Sharifi, M. J.

2015-09-01

Device performance of 10 nm length armchair graphene nanoribbon field effect transistors with 1.5 nm and 4 nm width (13 and 33 atoms in width respectively) are compared in terms of Ion /Ioff , trans-conductance, and sub-threshold swing. While narrow devices suffer from edge roughness wider devices are subject to more substrate surface roughness and reduced bandgap. Boron Nitride doping is employed to compensate reduced bandgap in wider devices. Simultaneous effects of edge and substrate surface roughness are considered. Results show that in the presence of both the edge and substrate surface roughness the 4 nm wide device with boron nitride doping shows improved performance with respect to the 1.5 nm one (both of which incorporate the same bandgap AGNR as channel material). Electronic simulations are performed via NEGF method along with tight-binding Hamiltonian. Edge and surface roughness are created by means of one and two dimensional auto correlation functions respectively. Electronic characteristics are averaged over a large number of devices due to statistic nature of both the edge and surface roughness.

Scaling of Performance in Liquid Propellant Rocket Engine Combustion Devices

NASA Technical Reports Server (NTRS)

Hulka, James R.

2008-01-01

This paper discusses scaling of combustion and combustion performance in liquid propellant rocket engine combustion devices. In development of new combustors, comparisons are often made between predicted performance in a new combustor and measured performance in another combustor with different geometric and thermodynamic characteristics. Without careful interpretation of some key features, the comparison can be misinterpreted and erroneous information used in the design of the new device. This paper provides a review of this performance comparison, including a brief review of the initial liquid rocket scaling research conducted during the 1950s and 1960s, a review of the typical performance losses encountered and how they scale, a description of the typical scaling procedures used in development programs today, and finally a review of several historical development programs to see what insight they can bring to the questions at hand.

Position-dependent performance of copper phthalocyanine based field-effect transistors by gold nanoparticles modification.

PubMed

Luo, Xiao; Li, Yao; Lv, Wenli; Zhao, Feiyu; Sun, Lei; Peng, Yingquan; Wen, Zhanwei; Zhong, Junkang; Zhang, Jianping

2015-01-21

A facile fabrication and characteristics of copper phthalocyanine (CuPc)-based organic field-effect transistor (OFET) using the gold nanoparticles (Au NPs) modification is reported, thereby achieving highly improved performance. The effect of Au NPs located at three different positions, that is, at the SiO2/CuPc interface (device B), embedding in the middle of CuPc layer (device C), and on the top of CuPc layer (device D), is investigated, and the results show that device D has the best performance. Compared with the device without Au NPs (reference device A), device D displays an improvement of field-effect mobility (μ(sat)) from 1.65 × 10(-3) to 5.51 × 10(-3) cm(2) V(-1) s(-1), and threshold voltage decreases from -23.24 to -16.12 V. Therefore, a strategy for the performance improvement of the CuPc-based OFET with large field-effect mobility and saturation drain current is developed, on the basis of the concept of nanoscale Au modification. The model of an additional electron transport channel formation by FET operation at the Au NPs/CuPc interface is therefore proposed to explain the observed performance improvement. Optimum CuPc thickness is confirmed to be about 50 nm in the present study. The device-to-device uniformity and time stability are discussed for future application.

Investigations on the effects of electrode materials on the device characteristics of ferroelectric memory thin film transistors fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Yang, Ji-Hee; Yun, Da-Jeong; Seo, Gi-Ho; Kim, Seong-Min; Yoon, Myung-Han; Yoon, Sung-Min

2018-03-01

For flexible memory device applications, we propose memory thin-film transistors using an organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and an amorphous In-Ga-Zn-O (a-IGZO) active channel. The effects of electrode materials and their deposition methods on the characteristics of memory devices exploiting the ferroelectric field effect were investigated for the proposed ferroelectric memory thin-film transistors (Fe-MTFTs) at flat and bending states. It was found that the plasma-induced sputtering deposition and mechanical brittleness of the indium-tin oxide (ITO) markedly degraded the ferroelectric-field-effect-driven memory window and bending characteristics of the Fe-MTFTs. The replacement of ITO electrodes with metal aluminum (Al) electrodes prepared by plasma-free thermal evaporation greatly enhanced the memory device characteristics even under bending conditions owing to their mechanical ductility. Furthermore, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) was introduced to achieve robust bending performance under extreme mechanical stress. The Fe-MTFTs using PEDOT:PSS source/drain electrodes were successfully fabricated and showed the potential for use as flexible memory devices. The suitable choice of electrode materials employed for the Fe-MTFTs is concluded to be one of the most important control parameters for highly functional flexible Fe-MTFTs.

Experimental study of the novel tuned mass damper with inerter which enables changes of inertance

NASA Astrophysics Data System (ADS)

Brzeski, P.; Lazarek, M.; Perlikowski, P.

2017-09-01

In this paper we present the experimental verification of the novel tuned mass damper which enables changes of inertance. Characteristic feature of the proposed device is the presence of special type of inerter. This inerter incorporates a continuously variable transmission that enables stepless changes of inertance. Thus, it enables to adjust the parameters of the damping device to the current forcing characteristic. In the paper we present and describe the experimental rig that consists of the massive main oscillator forced kinematically and the prototype of the investigated damper. We perform a series of dedicated experiments to characterize the device and asses its damping efficiency. Moreover, we perform numerical simulations using the simple mathematical model of investigated system. Comparing the numerical results and the experimental data we legitimize the model and demonstrate the capabilities of the investigated tuned mass damper. Presented results prove that the concept of the novel type of tuned mass damper can be realized and enable to confirm its main advantages. Investigated prototype device offers excellent damping efficiency in a wide range of forcing frequencies.

Thermodynamic Analysis of TEG-TEC Device Including Influence of Thomson Effect

NASA Astrophysics Data System (ADS)

Feng, Yuanli; Chen, Lingen; Meng, Fankai; Sun, Fengrui

2018-01-01

A thermodynamic model of a thermoelectric cooler driven by thermoelectric generator (TEG-TEC) device is established considering Thomson effect. The performance is analyzed and optimized using numerical calculation based on non-equilibrium thermodynamic theory. The influence characteristics of Thomson effect on the optimal performance and variable selection are investigated by comparing the condition with and without Thomson effect. The results show that Thomson effect degrades the performance of TEG-TEC device, it decreases the cooling capacity by 27 %, decreases the coefficient of performance (COP) by 19 %, decreases the maximum cooling temperature difference by 11 % when the ratio of thermoelectric elements number is 0.6, the cold junction temperature of thermoelectric cooler (TEC) is 285 K and the hot junction temperature of thermoelectric generator (TEG) is 450 K. Thomson effect degrades the optimal performance of TEG-TEC device, it decreases the maximum cooling capacity by 28 % and decreases the maximum COP by 28 % under the same junction temperatures. Thomson effect narrows the optimal variable range and optimal working range. In the design of the devices, limited-number thermoelectric elements should be more allocated appropriately to TEG when consider Thomson effect. The results may provide some guidelines for the design of TEG-TEC devices.

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott

2003-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

A Comprehensive Study on Energy Efficiency and Performance of Flash-based SSD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Seon-Yeon; Kim, Youngjae; Urgaonkar, Bhuvan

2011-01-01

Use of flash memory as a storage medium is becoming popular in diverse computing environments. However, because of differences in interface, flash memory requires a hard-disk-emulation layer, called FTL (flash translation layer). Although the FTL enables flash memory storages to replace conventional hard disks, it induces significant computational and space overhead. Despite the low power consumption of flash memory, this overhead leads to significant power consumption in an overall storage system. In this paper, we analyze the characteristics of flash-based storage devices from the viewpoint of power consumption and energy efficiency by using various methodologies. First, we utilize simulation tomore » investigate the interior operation of flash-based storage of flash-based storages. Subsequently, we measure the performance and energy efficiency of commodity flash-based SSDs by using microbenchmarks to identify the block-device level characteristics and macrobenchmarks to reveal their filesystem level characteristics.« less

Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor

NASA Astrophysics Data System (ADS)

Ahish, S.; Sharma, Dheeraj; Vasantha, M. H.; Kumar, Y. B. N.

2017-03-01

In this paper, analog/RF performance of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor (HJTFET) has been explored. A highly doped n+ layer is placed at the Source-Channel junction in order to improve the horizontal electric field component and thus, improve the realiability of the device. The analog performance of the device is analysed by extracting current-voltage characteristics, transcondutance (gm), gate-to-drain capacitance (Cgd) and gate-to-source capacitance (Cgs). Further, RF performance of the device is evaluated by obtaining cut-off frequency (fT) and Gain Bandwidth (GBW) product. ION /IOFF ratio equal to ≈ 109, subthreshold slope of 27 mV/dec, maximum fT of 2.1 THz and maximum GBW of 484 GHz were achieved. Also, the impact of temperature variation on the linearity performance of the device has been investigated. Furthermore, the circuit level performance of the device is performed by implementing a Common Source (CS) amplifier; maximum gain of 31.11 dB and 3-dB cut-off frequency equal to 91.2 GHz were achieved for load resistance (RL) = 17.5 KΩ.

Two dimensional simulation of patternable conducting polymer electrode based organic thin film transistor

NASA Astrophysics Data System (ADS)

Nair, Shiny; Kathiresan, M.; Mukundan, T.

2018-02-01

Device characteristics of organic thin film transistor (OTFT) fabricated with conducting polyaniline:polystyrene sulphonic acid (PANi-PSS) electrodes, patterned by the Parylene lift-off method are systematically analyzed by way of two dimensional numerical simulation. The device simulation was performed taking into account field-dependent mobility, low mobility layer at the electrode-semiconductor interface, trap distribution in pentacene film and trapped charge at the organic/insulator interface. The electrical characteristics of bottom contact thin film transistor with PANi-PSS electrodes and pentacene active material is superior to those with palladium electrodes due to a lower charge injection barrier. Contact resistance was extracted in both cases by the transfer line method (TLM). The extracted charge concentration and potential profile from the two dimensional numerical simulation was used to explain the observed electrical characteristics. The simulated device characteristics not only matched the experimental electrical characteristics, but also gave an insight on the charge injection, transport and trap properties of the OTFTs as a function of different electrode materials from the perspectives of transistor operation.

A comment on the dependence of LED’s efficiency on the junction ideality factor

NASA Astrophysics Data System (ADS)

Sethi, Anubhav; Gupta, Yashika; Arun, P.

2018-05-01

P–n junctions form the basic building blocks for any semiconductor device. Therefore, the complete understanding of the junction characteristics is very important. Although being a widely discussed topic in electronics, there are still some gaps such as finding the value and significance of the junction ideality factor, that needs to be addressed. In this article we have discussed the problems faced while extracting the ideality factor from the I–V characteristics of a p–n LED and its significance in device performance.

Baseline experimental investigation of an electrohydrodynamically assisted heat pipe

NASA Technical Reports Server (NTRS)

Duncan, A. B.

1995-01-01

The increases in power demand and associated thermal management requirements of future space programs such as potential Lunar/Mars missions will require enhancing the operating efficiencies of thermal management devices. Currently, the use of electrohydrodynamically (EHD) assisted thermal control devices is under consideration as a potential method of increasing thermal management system capacity. The objectives of the currently described investigation included completing build-up of the EHD-Assisted Heat Pipe Test bed, developing test procedures for an experimental evaluation of the unassisted heat pipe, developing an analytical model capable of predicting the performance limits of the unassisted heat pipe, and obtaining experimental data which would define the performance characteristics of the unassisted heat pipe. The information obtained in the currently proposed study will be used in order to provide extensive comparisons with the EHD-assisted performance observations to be obtained during the continuing investigation of EHD-Assisted heat transfer devices. Through comparisons of the baseline test bed data and the EHD assisted test bed data, accurate insight into the performance enhancing characteristics of EHD augmentation may be obtained. This may lead to optimization, development, and implementation of EHD technology for future space programs.

Atherectomy devices: technology update

PubMed Central

Akkus, Nuri I; Abdulbaki, Abdulrahman; Jimenez, Enrique; Tandon, Neeraj

2015-01-01

Atherectomy is a procedure which is performed to remove atherosclerotic plaque from diseased arteries. Atherosclerotic plaques are localized in either coronary or peripheral arterial vasculature and may have different characteristics depending on the texture of the plaque. Atherectomy has been used effectively in treatment of both coronary and peripheral arterial disease. Atherectomy devices are designed differently to either cut, shave, sand, or vaporize these plaques and have different indications. In this article, current atherectomy devices are reviewed. PMID:25565904

Azurin/CdSe-ZnS-Based Bio-Nano Hybrid Structure for Nanoscale Resistive Memory Device.

PubMed

Yagati, Ajay Kumar; Lee, Taek; Choi, Jeong-Woo

2017-07-15

In the present study, we propose a method for bio-nano hybrid formation by coupling a redox metalloprotein, Azurin, with CdSe-ZnS quantum dot for the development of a nanoscale resistive memory device. The covalent interaction between the two nanomaterials enables a strong and effective binding to form an azurin/CdSe-ZnS hybrid, and also enabled better controllability to couple with electrodes to examine the memory function properties. Morphological and optical properties were performed to confirm both hybrid formations and also their individual components. Current-Voltage (I-V) measurements on the hybrid nanostructures exhibited bistable current levels towards the memory function device, that and those characteristics were unnoticeable on individual nanomaterials. The hybrids showed good retention characteristics with high stability and durability, which is a promising feature for future nanoscale memory devices.

Performance evaluation and comparison of three-terminal energy selective electron devices with different connective ways and filter configurations

NASA Astrophysics Data System (ADS)

Peng, Wanli; Zhang, Yanchao; Yang, Zhimin; Chen, Jincan

2018-02-01

Three-terminal energy selective electron (ESE) devices consisting of three electronic reservoirs connected by two energy filters and an electronic conductor with negligible resistance may work as ESE refrigerators and amplifiers. They have three possible connective ways for the electronic conductor and six electronic transmission forms. The configuration of energy filters may be described by the different transmission functions such as the rectangular and Lorentz transmission functions. The ESE devices with three connective ways can be, respectively, regarded as three equivalent hybrid systems composed of an ESE heat engine and an ESE refrigerator/heat pump. With the help of the theory of the ESE devices operated between two electronic reservoirs, the coefficients of performance and cooling rates (heat-pumping rates) of hybrid systems are directly derived. The general performance characteristics of hybrid systems are revealed. The optimal regions of these devices are determined. The performances of the devices with three connective ways of the electronic conductor and two configurations of energy filters are compared in detail. The advantages and disadvantages of each of three-terminal ESE devices are expounded. The results obtained here may provide some guidance for the optimal design and operation of three-terminal ESE devices.

Balance Improvement Effects of Biofeedback Systems with State-of-the-Art Wearable Sensors: A Systematic Review.

PubMed

Ma, Christina Zong-Hao; Wong, Duo Wai-Chi; Lam, Wing Kai; Wan, Anson Hong-Ping; Lee, Winson Chiu-Chun

2016-03-25

Falls and fall-induced injuries are major global public health problems. Balance and gait disorders have been the second leading cause of falls. Inertial motion sensors and force sensors have been widely used to monitor both static and dynamic balance performance. Based on the detected performance, instant visual, auditory, electrotactile and vibrotactile biofeedback could be provided to augment the somatosensory input and enhance balance control. This review aims to synthesize the research examining the effect of biofeedback systems, with wearable inertial motion sensors and force sensors, on balance performance. Randomized and non-randomized clinical trials were included in this review. All studies were evaluated based on the methodological quality. Sample characteristics, device design and study characteristics were summarized. Most previous studies suggested that biofeedback devices were effective in enhancing static and dynamic balance in healthy young and older adults, and patients with balance and gait disorders. Attention should be paid to the choice of appropriate types of sensors and biofeedback for different intended purposes. Maximizing the computing capacity of the micro-processer, while minimizing the size of the electronic components, appears to be the future direction of optimizing the devices. Wearable balance-improving devices have their potential of serving as balance aids in daily life, which can be used indoors and outdoors.

Balance Improvement Effects of Biofeedback Systems with State-of-the-Art Wearable Sensors: A Systematic Review

PubMed Central

Ma, Christina Zong-Hao; Wong, Duo Wai-Chi; Lam, Wing Kai; Wan, Anson Hong-Ping; Lee, Winson Chiu-Chun

2016-01-01

Falls and fall-induced injuries are major global public health problems. Balance and gait disorders have been the second leading cause of falls. Inertial motion sensors and force sensors have been widely used to monitor both static and dynamic balance performance. Based on the detected performance, instant visual, auditory, electrotactile and vibrotactile biofeedback could be provided to augment the somatosensory input and enhance balance control. This review aims to synthesize the research examining the effect of biofeedback systems, with wearable inertial motion sensors and force sensors, on balance performance. Randomized and non-randomized clinical trials were included in this review. All studies were evaluated based on the methodological quality. Sample characteristics, device design and study characteristics were summarized. Most previous studies suggested that biofeedback devices were effective in enhancing static and dynamic balance in healthy young and older adults, and patients with balance and gait disorders. Attention should be paid to the choice of appropriate types of sensors and biofeedback for different intended purposes. Maximizing the computing capacity of the micro-processer, while minimizing the size of the electronic components, appears to be the future direction of optimizing the devices. Wearable balance-improving devices have their potential of serving as balance aids in daily life, which can be used indoors and outdoors. PMID:27023558

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1984-01-01

The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

Memory characteristics of metal-oxide-semiconductor structures based on Ge nanoclusters-embedded GeO(x) films grown at low temperature.

PubMed

Lin, Tzu-Shun; Lou, Li-Ren; Lee, Ching-Ting; Tsai, Tai-Cheng

2012-03-01

The memory devices constructed from the Ge-nanoclusters embedded GeO(x) layer deposited by the laser-assisted chemical vapor deposition (LACVD) system were fabricated. The Ge nanoclusters were observed by a high-resolution transmission electron microscopy. Using the capacitance versus voltage (C-V) and the conductance versus voltage (G-V) characteristics measured under various frequencies, the memory effect observed in the C-V curves was dominantly attributed to the charge storage in the Ge nanoclusters. Furthermore, the defects existed in the deposited film and the interface states were insignificant to the memory performances. Capacitance versus time (C-t) measurement was also executed to evaluate the charge retention characteristics. The charge storage and retention behaviors of the devices demonstrated that the Ge nanoclusters grown by the LACVD system at low temperature are promising for memory device applications.

The future scientific CCD

NASA Technical Reports Server (NTRS)

Janesick, J. R.; Elliott, T.; Collins, S.; Marsh, H.; Blouke, M. M.

1984-01-01

Since the first introduction of charge-coupled devices (CCDs) in 1970, CCDs have been considered for applications related to memories, logic circuits, and the detection of visible radiation. It is pointed out, however, that the mass market orientation of CCD development has left largely untapped the enormous potential of these devices for advanced scientific instrumentation. The present paper has, therefore, the objective to introduce the CCD characteristics to the scientific community, taking into account prospects for further improvement. Attention is given to evaluation criteria, a summary of current CCDs, CCD performance characteristics, absolute calibration tools, quantum efficiency, aspects of charge collection, charge transfer efficiency, read noise, and predictions regarding the characteristics of the next generation of silicon scientific CCD imagers.

Ultra-high heat flux cooling characteristics of cryogenic micro-solid nitrogen particles and its application to semiconductor wafer cleaning technology

NASA Astrophysics Data System (ADS)

Ishimoto, Jun; Oh, U.; Guanghan, Zhao; Koike, Tomoki; Ochiai, Naoya

2014-01-01

The ultra-high heat flux cooling characteristics and impingement behavior of cryogenic micro-solid nitrogen (SN2) particles in relation to a heated wafer substrate were investigated for application to next generation semiconductor wafer cleaning technology. The fundamental characteristics of cooling heat transfer and photoresist removal-cleaning performance using micro-solid nitrogen particulate spray impinging on a heated substrate were numerically investigated and experimentally measured by a new type of integrated computational-experimental technique. This study contributes not only advanced cryogenic cooling technology for high thermal emission devices, but also to the field of nano device engineering including the semiconductor wafer cleaning technology.

Toward earlier detection of choroidal neovascularization secondary to age-related macular degeneration: multicenter evaluation of a preferential hyperacuity perimeter designed as a home device.

PubMed

Loewenstein, Anat; Ferencz, Joseph R; Lang, Yaron; Yeshurun, Itamar; Pollack, Ayala; Siegal, Ruth; Lifshitz, Tova; Karp, Joseph; Roth, Daniel; Bronner, Guri; Brown, Justin; Mansour, Sam; Friedman, Scott; Michels, Mark; Johnston, Richards; Rapp, Moshe; Havilio, Moshe; Rafaeli, Omer; Manor, Yair

2010-01-01

The primary purpose of this study was to evaluate the ability of a home device preferential hyperacuity perimeter to discriminate between patients with choroidal neovascularization (CNV) and intermediate age-related macular degeneration (AMD), and the secondary purpose was to investigate the dependence of sensitivity on lesion characteristics. All participants were tested with the home device in an unsupervised mode. The first part of this work was retrospective using tests performed by patients with intermediate AMD and newly diagnosed CNV. In the second part, the classifier was prospectively challenged with tests performed by patients with intermediate AMD and newly diagnosed CNV. The dependence of sensitivity on lesion characteristics was estimated with tests performed by patients with CNV of both parts. In 66 eyes with CNV and 65 eyes with intermediate AMD, both sensitivity and specificity were 0.85. In the retrospective part (34 CNV and 43 intermediate AMD), sensitivity and specificity were 0.85 +/- 0.12 (95% confidence interval) and 0.84 +/- 0.11 (95% confidence interval), respectively. In the prospective part (32 CNV and 22 intermediate AMD), sensitivity and specificity were 0.84 +/- 0.13 (95% confidence interval) and 0.86 +/- 0.14 (95% confidence interval), respectively. Chi-square analysis showed no dependence of sensitivity on type (P = 0.44), location (P = 0.243), or size (P = 0.73) of the CNV lesions. A home device preferential hyperacuity perimeter has good sensitivity and specificity in discriminating between patients with newly diagnosed CNV and intermediate AMD. Sensitivity is not dependent on lesion characteristics.

A Report on Deliverable One: Determine Required Performance Characteristics [of Suction] for Management Of Prehospital Combat Casualty Care Injuries

DTIC Science & Technology

reflect it. There are commercially available manual and powered suction devices on the market , and several are specifically advertised for use in...combine to suggest that no device on the market meets even the most basic requirements of being small, lightweight, rugged, and demonstrating adequate

The performance characteristics of lateral flow devices with 2 strains of highly pathogenic avian influenza virus

USDA-ARS?s Scientific Manuscript database

Lateral flow devices (LFD) are commercially available and provide a fast, highly specific, on-site test for avian influenza. Because of the low analytic sensitivity of LFD tests at low virus concentrations, targeted sampling of sick and dead birds has been proposed in order to increase detection pr...

Compact Si-based asymmetric MZI waveguide on SOI as a thermo-optical switch

NASA Astrophysics Data System (ADS)

Rizal, C. S.; Niraula, B.

2018-03-01

A compact low power consuming asymmetric MZI based optical modulator with fast response time has been proposed on SOI platform. The geometrical and performance characteristics were analyzed in depth and optimized using coupled mode analysis and FDTD simulation tools, respectively. It was tested with and without implementation of thermo-optic (TO) effect. The device showed good frequency modulating characteristics when tested without the implementation of the TO effect. The fabricated device showed quality factor, Q ≈ 10,000, and this value is comparable to the Q of the device simulated with 25% transmission loss, showing FSR of 0.195 nm, FWHM ≈ 0.16 nm, and ER of 13 dB. With TO effect, it showed temperature sensitivity of 0.01 nm/°C and FSR of 0.19 nm. With the heater length of 4.18 mm, the device required 0.26 mW per π shift power with a switching voltage of 0.309 V, response time of 10 μ, and figure-of-merit of 2.6 mW μs. All of these characteristics make this device highly attractive for use in integrated Si photonics network as optical switch and wavelength modulator.

Testing high brightness LEDs relative to application environment

NASA Astrophysics Data System (ADS)

Singer, Jeffrey; Mangum, Scott; Lundberg, John

2006-08-01

Application of light emitting diodes is expanding as the luminous output and efficiencies of these devices improve. At the same time, the number of LED package types is increasing, making it challenging to determine the appropriate device for use in lighting product designs. A range of factors should be considered when selecting a LED for an application including color coordinates, luminous efficacy, cost, lumen maintenance, application life, packaging and manufacturability. Additional complexities can be introduced as LED packages become obsolete and replacement parts must be selected. The replacement LED characteristics must be understood and assessed against the parameters of the original device, in order to determine if the change will be relatively simple or will force other end-product changes. While some characteristics are readily measured and compared, other factors, such as lumen maintenance, are difficult to verify. This paper will discuss the characteristics of a LED that should be considered during the design process as well as methods to validate these characteristics, particularly those which are not typically on data sheets or, are critical to the design and warrant additional validation. Particular attention will be given to LED lumen maintenance. While published manufacturer data typically provides temperature versus performance curves, the data may not be useful depending upon the application's operating environment. Models must be created to estimate the LED's junction temperature and degradation curve at the applied temperature in order to develop a more precise life estimate. This paper presents one approach to a LED device life and performance study designed with application environments in mind.

A compact inflow control device for simulating flight fan noise

NASA Technical Reports Server (NTRS)

Homyak, L.; Mcardle, J. G.; Heidelberg, L. J.

1983-01-01

Inflow control device (ICD's) of various shapes and sizes have been used to simulate inflight fan tone noise during ground static tests. A small, simple inexpensive ICD design was optimized from previous design and fabrication techniques. This compact two-fan-diameter ICD exhibits satisfactory acoustic performance characteristics without causing noise attenuation or redirection. In addition, it generates no important new noise sources. Design and construction details of the compact ICD are discussed and acoustic performance test results are presented.

Comparison of high speed DI-LIGBT structures

NASA Astrophysics Data System (ADS)

Sunkavalli, Ravishankar; Baliga, B. Jayant

1997-12-01

The performance of the DI segmented collector (SC)-LIGBT is compared to the collector shorted (CS)-LIGBT. The SC-LIGBT allows for adjusting the tradeoff between switching speed and on-state voltage drop by simply changing the P+ collector segment width during device layout. In contrast to previously reported junction isolated (JI) devices, the DI SC-LIGBT was observed to have a turnoff speed similar to the CS-LIGBT with a higher forward drop than the conventional LIGBT. The on-state performance of the integral diodes of the SC-LIGBTs was found to be superior to the integral diode of the CS-LIGBT. The integral diodes of both the CS and the SC-LIGBTs were found to have much superior switching characteristics compared to a lateral PiN diode at the expense of a higher on-state voltage drop. Thus, the superior switching characteristics of the integral diode in the SC-LIGBT complements its fast switching behavior making this device attractive for compact, high frequency, high efficient, power ICs.

Recent progress on fabrication of memristor and transistor-based neuromorphic devices for high signal processing speed with low power consumption

NASA Astrophysics Data System (ADS)

Hadiyawarman; Budiman, Faisal; Goldianto Octensi Hernowo, Detiza; Pandey, Reetu Raj; Tanaka, Hirofumi

2018-03-01

The advanced progress of electronic-based devices for artificial neural networks and recent trends in neuromorphic engineering are discussed in this review. Recent studies indicate that the memristor and transistor are two types of devices that can be implemented as neuromorphic devices. The electrical switching characteristics and physical mechanism of neuromorphic devices based on metal oxide, metal sulfide, silicon, and carbon materials are broadly covered in this review. Moreover, the switching performance comparison of several materials mentioned above are well highlighted, which would be useful for the further development of memristive devices. Recent progress in synaptic devices and the application of a switching device in the learning process is also discussed in this paper.

Performance characteristics of a nanoscale double-gate reconfigurable array

NASA Astrophysics Data System (ADS)

Beckett, Paul

2008-12-01

The double gate transistor is a promising device applicable to deep sub-micron design due to its inherent resistance to short-channel effects and superior subthreshold performance. Using both TCAD and SPICE circuit simulation, it is shown that the characteristics of fully depleted dual-gate thin-body Schottky barrier silicon transistors will not only uncouple the conflicting requirements of high performance and low standby power in digital logic, but will also allow the development of a locally-connected reconfigurable computing mesh. The magnitude of the threshold shift effect will scale with device dimensions and will remain compatible with oxide reliability constraints. A field-programmable architecture based on the double gate transistor is described in which the operating point of the circuit is biased via one gate while the other gate is used to form the logic array, such that complex heterogeneous computing functions may be developed from this homogeneous, mesh-connected organization.

Magnetic-field-controlled reconfigurable semiconductor logic.

PubMed

Joo, Sungjung; Kim, Taeyueb; Shin, Sang Hoon; Lim, Ju Young; Hong, Jinki; Song, Jin Dong; Chang, Joonyeon; Lee, Hyun-Woo; Rhie, Kungwon; Han, Suk Hee; Shin, Kyung-Ho; Johnson, Mark

2013-02-07

Logic devices based on magnetism show promise for increasing computational efficiency while decreasing consumed power. They offer zero quiescent power and yet combine novel functions such as programmable logic operation and non-volatile built-in memory. However, practical efforts to adapt a magnetic device to logic suffer from a low signal-to-noise ratio and other performance attributes that are not adequate for logic gates. Rather than exploiting magnetoresistive effects that result from spin-dependent transport of carriers, we have approached the development of a magnetic logic device in a different way: we use the phenomenon of large magnetoresistance found in non-magnetic semiconductors in high electric fields. Here we report a device showing a strong diode characteristic that is highly sensitive to both the sign and the magnitude of an external magnetic field, offering a reversible change between two different characteristic states by the application of a magnetic field. This feature results from magnetic control of carrier generation and recombination in an InSb p-n bilayer channel. Simple circuits combining such elementary devices are fabricated and tested, and Boolean logic functions including AND, OR, NAND and NOR are performed. They are programmed dynamically by external electric or magnetic signals, demonstrating magnetic-field-controlled semiconductor reconfigurable logic at room temperature. This magnetic technology permits a new kind of spintronic device, characterized as a current switch rather than a voltage switch, and provides a simple and compact platform for non-volatile reconfigurable logic devices.

Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

NASA Astrophysics Data System (ADS)

Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

2017-07-01

Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A-1, 81.22 lm W-1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m-2 to 10 000 cd m-2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density-voltage (J-V) characteristics of the electron-only devices. In particular, by comparing the J-V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m-2 to 10870 cd m-2, as is beneficial to the lighting application.

Interactions Between Channel Topography and Hydrokinetic Turbines: Sediment Transport, Turbine Performance, and Wake Characteristics

NASA Astrophysics Data System (ADS)

Hill, Craig Steven

Accelerating marine hydrokinetic (MHK) renewable energy development towards commercial viability requires investigating interactions between the engineered environment and its surrounding physical and biological environments. Complex and energetic hydrodynamic and morphodynamic environments desired for such energy conversion installations present difficulties for designing efficient yet robust sustainable devices, while permitting agency uncertainties regarding MHK device environmental interactions result in lengthy and costly processes prior to installing and demonstrating emerging technologies. A research program at St. Anthony Falls Laboratory (SAFL), University of Minnesota, utilized multi-scale physical experiments to study the interactions between axial-flow hydrokinetic turbines, turbulent open channel flow, sediment transport, turbulent turbine wakes, and complex hydro-morphodynamic processes in channels. Model axial-flow current-driven three-bladed turbines (rotor diameters, dT = 0.15m and 0.5m) were installed in open channel flumes with both erodible and non-erodible substrates. Device-induced local scour was monitored over several hydraulic conditions and material sizes. Synchronous velocity, bed elevation and turbine performance measurements provide an indication into the effect channel topography has on device performance. Complimentary experiments were performed in a realistic meandering outdoor research channel with active sediment transport to investigate device interactions with bedform migration and secondary turbulent flow patterns in asymmetric channel environments. The suite of experiments undertaken during this research program at SAFL in multiple channels with stationary and mobile substrates under a variety of turbine configurations provides an in-depth investigation into how axial-flow hydrokinetic devices respond to turbulent channel flow and topographic complexity, and how they impact local and far-field sediment transport characteristics. Results provide the foundation for investigating advanced turbine control strategies for optimal power production in non-stationary environments, while also providing a robust data-set for computational model validation for further investigating the interactions between energy conversion devices and the physical environment.

Influences of device structures on microstructure-correlated photovoltaic characteristics of organic solar cells

NASA Astrophysics Data System (ADS)

Wu, Fu-Chiao; Yang, Cheng-Chi; Tseng, Po-Tsung; Chou, Wei-Yang; Cheng, Horng-Long

2017-02-01

Photovoltaic characteristics of organic solar cells (OSCs) are correlated with microstructural qualities of active layers (ALs). Numerous efforts focused on improving process conditions of ALs to attain effective microstructures to achieve high-efficiency OSCs. Aside from AL process conditions, layer properties under AL can also influence microstructural qualities of AL. In this study, we adopted poly(3-hexylthiophene) (P3HT):(6,6)-phenyl C61-butyric acid methyl ester (PCBM) mixture as AL, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as hole extraction layer, and branched polyethyleneimine (BPEI) as electron extraction layer to prepare OSCs with different device structures, that is, normal type (PEDOT:PSS/P3HT:PCBM/BPEI) and inverted type (BPEI/P3HT:PCBM/PEDOT:PSS) structures. We discovered that although devices have similar layer components, they have different photovoltaic characteristics. Inverted devices demonstrated higher power conversion efficiency than normal devices. Various methods, including absorption spectroscopy and microscopy, were used to study AL microstructures of different devices. We observed that P3HT crystallites grown on BPEI had longer vertical size and shorter horizontal size compared with those grown on PEDOT:PSS; these properties could result from larger interfacial tension of P3HT with BPEI than with PEDOT:PSS. Observed shape of P3HT crystallites in inverted devices facilitated efficient charge transport to electrodes and suppressed current leakage. As a result, inverted devices generated improved photovoltaic performance.

Development of induction current acquisition device based on ARM

NASA Astrophysics Data System (ADS)

Ji, Yanju; Liu, Xiyang; Huang, Wanyu; Yao, Jiang; Yuan, Guiyang; Hui, Luan; Guan, Shanshan

2018-03-01

We design an induction current acquisition device based on ARM in order to realize high resolution and high sampling rate of acquisition for the induction current in wire-loop. Considering its characteristics of fast attenuation and small signal amplitude, we use the method of multi-path fusion for noise suppression. In the paper, the design is carried out from three aspects of analog circuit and device selection, independent power supply structure and the electromagnetic interference suppression of high frequency. DMA and ping-pong buffer, as a new data transmission technology, solves real time storage problem of massive data. The performance parameters of ARM acquisition device are tested. The comparison test of ARM acquisition device and cRIO acquisition device is performed at different time constants. The results show that it has 120dB dynamic range, 47kHz bandwidth, 96kHz sampling rate, 5μV the smallest resolution, and its average error value is not more than 4%, which proves the high accuracy and stability of the device.

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

NASA Astrophysics Data System (ADS)

Tsai, Tsung-Ling; Chang, Hsiang-Yu; Lou, Jesse Jen-Chung; Tseng, Tseung-Yuen

2016-04-01

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO2)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO2/ITO single layer device, the ITO/ZrO2/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO2/AlON interface. Therefore, in the ITO/ZrO2/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

Over-the-Counter Hearing Aids: A Lost Decade for Change

PubMed Central

Chan, Zoe Yee Ting; McPherson, Bradley

2015-01-01

Background. Hearing aids sold directly to consumers in retail stores or through the internet, without individual prescription by audiological professionals, are termed over-the-counter (OTC) devices. This study aimed to determine whether there was any change in the electroacoustic characteristics of OTC devices compared to research carried out a decade earlier. The previous results indicated that most OTC devices were low-frequency-emphasis devices and were unsuitable for elderly people with presbycusis, who were likely to be the major consumers of these products. Methods. Ten OTC devices were selected and their electroacoustic performance was measured. Appropriate clients for the OTC devices were derived, using four linear prescription formulae, and OTC suitability for elderly persons with presbycusis was investigated. Results. OTC electroacoustic characteristics were similar to those in the earlier study. Most OTC devices were not acoustically appropriate for potential consumers with presbycusis. Although several of the devices could match prescriptive targets for individuals with presbycusis, their poor electroacoustic performance—including ineffective volume control function, high equivalent input noise, and irregular frequency response—may override their potential benefit. Conclusion. The low-cost OTC devices were generally not suitable for the main consumers of these products, and there has been little improvement in the appropriateness of these devices over the past decade. PMID:26557701

Design of double gate vertical tunnel field effect transistor using HDB and its performance estimation

NASA Astrophysics Data System (ADS)

Seema; Chauhan, Sudakar Singh

2018-05-01

In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics. In this concern, the existence of double gate, HDB and electrode work-function engineering enhances DC performance and Analog/RF performance. The use of electrostatic doping helps to achieve higher on-current owing to occurrence of higher tunneling generation rate of charge carriers at the source/epitaxial interface. Further, lightly doped drain region and high- k dielectric below channel and drain region are responsible to suppress the ambipolar current. Simulated results clarifies that proposed device have achieved the tremendous performance in terms of driving current capability, steeper subthreshold slope (SS), drain induced barrier lowering (DIBL), hot carrier effects (HCEs) and high frequency parameters for better device reliability.

Permittivity and temperature effects on rectification performance of self-switching diodes with different geometrical structures using two-dimensional device simulator

NASA Astrophysics Data System (ADS)

Zakaria, N. F.; Kasjoo, S. R.; Zailan, Z.; Isa, M. M.; Taking, S.; Arshad, M. K. M.

2017-12-01

Characterization on an InGaAs-based self-switching diode (SSD) using technology computer aided design (TCAD) aimed for optimizing the electrical rectification performance of the device is reported. The rectifying performance is mainly contributed by a parameter known as the curvature coefficient which is derived from the current-voltage (I-V) behavior of the device. As such, the curvature coefficient of SSD was analyzed in this work, not only by varying the device's geometrical structure, but also by implementing different dielectric relative permittivity of the device's trenches, ranging from 1.0 to 10. Furthermore, the simulations were performed under temperature range of 300-600 K. The results showed that increased temperature degraded the SSD's rectifying performance due to increased reverse current which can deteriorate the nonlinearity of the device's I-V characteristic. Moreover, an improved curvature coefficient can be achieved using silicon dioxide (∼3.9) as the SSD trenches. The cut-off frequency of SSD with zero-bias curvature coefficient of ∼30 V-1 attained in this work was approximately 80 GHz, operating at unbiased condition. The results obtained can assist the design of SSD to efficiently operate as rectifiers at microwave and terahertz frequencies.

Application Performance Analysis and Efficient Execution on Systems with multi-core CPUs, GPUs and MICs: A Case Study with Microscopy Image Analysis

PubMed Central

Teodoro, George; Kurc, Tahsin; Andrade, Guilherme; Kong, Jun; Ferreira, Renato; Saltz, Joel

2015-01-01

We carry out a comparative performance study of multi-core CPUs, GPUs and Intel Xeon Phi (Many Integrated Core-MIC) with a microscopy image analysis application. We experimentally evaluate the performance of computing devices on core operations of the application. We correlate the observed performance with the characteristics of computing devices and data access patterns, computation complexities, and parallelization forms of the operations. The results show a significant variability in the performance of operations with respect to the device used. The performances of operations with regular data access are comparable or sometimes better on a MIC than that on a GPU. GPUs are more efficient than MICs for operations that access data irregularly, because of the lower bandwidth of the MIC for random data accesses. We propose new performance-aware scheduling strategies that consider variabilities in operation speedups. Our scheduling strategies significantly improve application performance compared to classic strategies in hybrid configurations. PMID:28239253

Performance evaluation of continuity of care records (CCRs): parsing models in a mobile health management system.

PubMed

Chen, Hung-Ming; Liou, Yong-Zan

2014-10-01

In a mobile health management system, mobile devices act as the application hosting devices for personal health records (PHRs) and the healthcare servers construct to exchange and analyze PHRs. One of the most popular PHR standards is continuity of care record (CCR). The CCR is expressed in XML formats. However, parsing is an expensive operation that can degrade XML processing performance. Hence, the objective of this study was to identify different operational and performance characteristics for those CCR parsing models including the XML DOM parser, the SAX parser, the PULL parser, and the JSON parser with regard to JSON data converted from XML-based CCR. Thus, developers can make sensible choices for their target PHR applications to parse CCRs when using mobile devices or servers with different system resources. Furthermore, the simulation experiments of four case studies are conducted to compare the parsing performance on Android mobile devices and the server with large quantities of CCR data.

Influence of emissive layer thickness on electrical characteristics of polyfluorene copolymer based polymer light emitting diodes

NASA Astrophysics Data System (ADS)

Das, D.; Gopikrishna, P.; Singh, A.; Dey, A.; Iyer, P. K.

2016-04-01

Polymer light emitting diodes (PLEDs) with a device configuration of ITO/PEDOT:PSS/PFONPN01 [Poly [2,7-(9,9’-dioctylfluorene)-co-N-phenyl-1,8-naphthalimide (99:01)]/LiF/Al have been fabricated by varying the emissive layer (EML) thickness (40/65/80/130 nm) and the influence of EML thickness on the electrical characteristics of PLED has been studied. PLED can be modelled as a simple combination of resistors and capacitors. The impedance spectroscopy analysis showed that the devices with different EML thickness had different values of parallel resistance (RP) and the parallel capacitance (CP). The impedance of the devices is found to increase with increasing EML thickness resulting in an increase in the driving voltage. The device with an emissive layer thickness of 80nm, spin coated from a solution of concentration 15 mg/mL is found to give the best device performance with a maximum brightness value of 5226 cd/m2.

Development and Performance Analysis of a Photonics-Assisted RF Converter for 5G Applications

NASA Astrophysics Data System (ADS)

Borges, Ramon Maia; Muniz, André Luiz Marques; Sodré Junior, Arismar Cerqueira

2017-03-01

This article presents a simple, ultra-wideband and tunable radiofrequency (RF) converter for 5G cellular networks. The proposed optoelectronic device performs broadband photonics-assisted upconversion and downconversion using a single optical modulator. Experimental results demonstrate RF conversion from DC to millimeter waves, including 28 and 38 GHz that are potential frequency bands for 5G applications. Narrow linewidth and low phase noise characteristics are observed in all generated RF carriers. An experimental digital performance analysis using different modulation schemes illustrates the applicability of the proposed photonics-based device in reconfigurable optical wireless communications.

Intense deep-blue electroluminescence from ITO/Y₂O₃/Ag structure.

PubMed

Yin, Xue; Wang, Shenwei; Li, Ling; Mu, Guangyao; Tang, Ying; Duan, Wubiao; Yi, Lixin

2015-07-13

ITO/Y₂O₃/Ag devices were fabricated using Y₂O₃ films as insulator. Four intense and sharp lines with half-peak width of 4 nm were observed for the 293.78 nm InI, 316.10 nm InI, 444.82 nm InII and 403.07 nm InIII transitions. Luminescence mechanism was illustrated by cross-section of the devices based on the analysis of surface morphology. Under the action of strong electric field, the loss of K-shell electrons led to the occurrence of characteristic radiation of indium ions. In addition, the device with turn-on voltage of 10V demonstrates typical I-V diode characteristics. Moreover, Y₂O₃/In₂O₃ multiple films as the insulation layer instead of single Y₂O₃ films was found to improve the device performance with excellent CIE (x, y) coordinates (0.16, 0.03).

Exploring the Short-Channel Characteristics of Asymmetric Junctionless Double-Gate Silicon-on-Nothing MOSFET

NASA Astrophysics Data System (ADS)

Saha, Priyanka; Banerjee, Pritha; Dash, Dinesh Kumar; Sarkar, Subir Kumar

2018-03-01

This paper presents an analytical model of an asymmetric junctionless double-gate (asymmetric DGJL) silicon-on-nothing metal-oxide-semiconductor field-effect transistor (MOSFET). Solving the 2-D Poisson's equation, the expressions for center potential and threshold voltage are calculated. In addition, the response of the device toward the various short-channel effects like hot carrier effect, drain-induced barrier lowering and threshold voltage roll-off has also been examined along with subthreshold swing and drain current characteristics. Performance analysis of the present model is also demonstrated by comparing its short-channel behavior with conventional DGJL MOSFET. The effect of variation of the device features due to the variation of device parameters is also studied. The simulated results obtained using 2D device simulator, namely ATLAS, are in good agreement with the analytical results, hence validating our derived model.

Neural Network Modeling for Gallium Arsenide IC Fabrication Process and Device Characteristics.

NASA Astrophysics Data System (ADS)

Creech, Gregory Lee, I.

This dissertation presents research focused on the utilization of neurocomputing technology to achieve enhanced yield and effective yield prediction in integrated circuit (IC) manufacturing. Artificial neural networks are employed to model complex relationships between material and device characteristics at critical stages of the semiconductor fabrication process. Whole wafer testing was performed on the starting substrate material and during wafer processing at four critical steps: Ohmic or Post-Contact, Post-Recess, Post-Gate and Final, i.e., at completion of fabrication. Measurements taken and subsequently used in modeling include, among others, doping concentrations, layer thicknesses, planar geometries, layer-to-layer alignments, resistivities, device voltages, and currents. The neural network architecture used in this research is the multilayer perceptron neural network (MLPNN). The MLPNN is trained in the supervised mode using the generalized delta learning rule. It has one hidden layer and uses continuous perceptrons. The research focuses on a number of different aspects. First is the development of inter-process stage models. Intermediate process stage models are created in a progressive fashion. Measurements of material and process/device characteristics taken at a specific processing stage and any previous stages are used as input to the model of the next processing stage characteristics. As the wafer moves through the fabrication process, measurements taken at all previous processing stages are used as input to each subsequent process stage model. Secondly, the development of neural network models for the estimation of IC parametric yield is demonstrated. Measurements of material and/or device characteristics taken at earlier fabrication stages are used to develop models of the final DC parameters. These characteristics are computed with the developed models and compared to acceptance windows to estimate the parametric yield. A sensitivity analysis is performed on the models developed during this yield estimation effort. This is accomplished by analyzing the total disturbance of network outputs due to perturbed inputs. When an input characteristic bears no, or little, statistical or deterministic relationship to the output characteristics, it can be removed as an input. Finally, neural network models are developed in the inverse direction. Characteristics measured after the final processing step are used as the input to model critical in-process characteristics. The modeled characteristics are used for whole wafer mapping and its statistical characterization. It is shown that this characterization can be accomplished with minimal in-process testing. The concepts and methodologies used in the development of the neural network models are presented. The modeling results are provided and compared to the actual measured values of each characteristic. An in-depth discussion of these results and ideas for future research are presented.

Motor current signature analysis method for diagnosing motor operated devices

DOEpatents

Haynes, Howard D.; Eissenberg, David M.

1990-01-01

A motor current noise signature analysis method and apparatus for remotely monitoring the operating characteristics of an electric motor-operated device such as a motor-operated valve. Frequency domain signal analysis techniques are applied to a conditioned motor current signal to distinctly identify various operating parameters of the motor driven device from the motor current signature. The signature may be recorded and compared with subsequent signatures to detect operating abnormalities and degradation of the device. This diagnostic method does not require special equipment to be installed on the motor-operated device, and the current sensing may be performed at remote control locations, e.g., where the motor-operated devices are used in accessible or hostile environments.

A Comparison of Mobile and Fixed Device Access on User Engagement Associated With Women, Infants, and Children (WIC) Online Nutrition Education

PubMed Central

2016-01-01

Background Online health education has expanded its reach due to cost-effective implementation and demonstrated effectiveness. However, a limitation exists with the evaluation of online health education implementations and how the impact of the system is attenuated by the extent to which a user engages with it. Moreover, the current online health education research does not consider how this engagement has been affected by the transition from fixed to mobile user access over the last decade. Objective This paper focuses on comparing the impact mobile versus fixed devices have on user engagement key performance indicators (KPI) associated with the wichealth website (.org), an Internet-based parent-child feeding intervention offered to clients associated with the US Department of Agriculture’s Special Supplemental Nutrition Program for Women, Infants, and Children (WIC). Methods Data were collected from 612,201 nutrition education lessons completed by 305,735 unique WIC participants in 21 states over a 1-year period. Data consisted of system-collected measures, profile items, and items from an exit survey administered at the conclusion of each lesson. User engagement was defined based on 3 KPIs associated with usage of the wichealth website: number of link views, link view time, and progression in stage of readiness to change. Independent samples t tests were used to compare KPIs between fixed only and mobile only device users and paired samples t tests were used to compare KPIs within users who completed at least one lesson each on both a fixed and mobile device. A logistic regression was performed to estimate the odds of KPI performance thresholds in the independent samples study group given access device type while controlling for confounding of user characteristics associated with these KPIs. Results Analysis of 8 user characteristics (lessons completed, race, ethnicity, language, state of residence, pregnancy status, beginning stage of change, and preferred nutrition education method) were significantly (P<.001) related to various KPI differences between mobile and fixed device access. Non-mobile users were significantly (P<.001) more likely to engage based on all 3 KPIs, even after logistic regression control for the potential confounding related to the strongly associated user characteristics identified. Conclusions The findings of this study support the idea that online health education developers need to seriously consider access device when creating programs. Online health education developers need to take extra effort to truly understand access patterns of populations being served, and whether or not access device will influence user engagement performance indicators. PMID:27847351

Effect of the substitution of F on the photoswitching behavior in single molecular device

NASA Astrophysics Data System (ADS)

Bian, Baoan; Zheng, Yapeng; Yuan, Peipei; Liao, Bin; Chen, Wei; An, Xiuhua; Mo, Xiaotong; Ding, Yuqiang

2017-09-01

We carry out first-principles calculations based on density functional theory and non-equilibrium Green's function to investigate the electronic transport properties of a 5-arylidenehydantoin molecule sandwiched between two Au electrodes. A reversible switching behavior between E and Z isomerization can be observed in the device through light irradiation, and their currents display different characteristic. Furthermore, it is found that the substitution of F in the molecule enlarges the switching ratio of device. The different characteristics of currents for E/Z forms and E/Z with the substitution of F are discussed by the transmission spectra and the molecular projected self-consistent Hamiltonian states. We discuss the change of Fermi level alignment due to the substitution of F, and the polarization effect under bias. We find the negative differential resistance effect in the E form with the substitution of F, which is explained by change of molecule-electrode coupling with the varied bias. The results suggest that the 5-arylidenehydantoin molecule with the substitution of F that improves the performance of device, becoming one of the methods for improving single molecular photoswitching performance in the future.

Current Radiation Issues for Programmable Elements and Devices

NASA Technical Reports Server (NTRS)

Katz, R.; Wang, J. J.; Koga, R.; LaBel, A.; McCollum, J.; Brown, R.; Reed, R. A.; Cronquist, B.; Crain, S.; Scott, T.;

Micromachined modulator arrays for use in free-space optical communication systems

NASA Astrophysics Data System (ADS)

Lewis, Keith L.; Ridley, Kevin D.; McNie, Mark E.; Smith, Gilbert W.; Scott, Andrew M.

2004-12-01

A summary is presented of some of the design criteria relevant to the realisation of silicon micromachined modulator arrays for use in free-space optical communication systems. Theoretical performance levels achievable are compared with values measured on experimental devices produced using a modified Multi-User MEMS Process (MUMPS). Devices capable of realising modulation rates in excess of 300 kHz are described and their optical characteristics compared with published data on devices based on multiple quantum well technology.

Systems, methods and computer-readable media for modeling cell performance fade of rechargeable electrochemical devices

DOEpatents

Gering, Kevin L

2013-08-27

A system includes an electrochemical cell, monitoring hardware, and a computing system. The monitoring hardware periodically samples performance characteristics of the electrochemical cell. The computing system determines cell information from the performance characteristics of the electrochemical cell. The computing system also develops a mechanistic level model of the electrochemical cell to determine performance fade characteristics of the electrochemical cell and analyzing the mechanistic level model to estimate performance fade characteristics over aging of a similar electrochemical cell. The mechanistic level model uses first constant-current pulses applied to the electrochemical cell at a first aging period and at three or more current values bracketing a first exchange current density. The mechanistic level model also is based on second constant-current pulses applied to the electrochemical cell at a second aging period and at three or more current values bracketing the second exchange current density.

Apparatus and method for sensing motion in a microelectro-mechanical system

DOEpatents

Dickey, Fred M.; Holswade, Scott C.

1999-01-01

An apparatus and method are disclosed for optically sensing motion in a microelectromechanical system (also termed a MEMS device) formed by surface micromachining or LIGA. The apparatus operates by reflecting or scattering a light beam off a corrugated surface (e.g. gear teeth or a reference feature) of a moveable member (e.g. a gear, rack or linkage) within the MEMS device and detecting the reflected or scattered light. The apparatus can be used to characterize a MEMS device, measuring one or more performance characteristic such as spring and damping coefficients, torque and friction, or uniformity of motion of the moveable member. The apparatus can also be used to determine the direction and extent of motion of the moveable member; or to determine a particular mechanical state that a MEMS device is in. Finally, the apparatus and method can be used for providing feedback to the MEMS device to improve performance and reliability.

Computational Investigation of the NASA Cascade Cyclonic Separation Device

NASA Technical Reports Server (NTRS)

Hoyt, Nathaniel C.; Kamotani, Yasuhiro; Kadambi, Jaikrishnan; McQuillen, John B.; Sankovic, John M.

2008-01-01

Devices designed to replace the absent buoyancy separation mechanism within a microgravity environment are of considerable interest to NASA as the functionality of many spacecraft systems are dependent on the proper sequestration of interpenetrating gas and liquid phases. Inasmuch, a full multifluid Euler-Euler computational fluid dynamics investigation has been undertaken to evaluate the performance characteristics of one such device, the Cascade Cyclonic Separator, across a full range of inlet volumetric quality with combined volumetric injection rates varying from 1 L/min to 20 L/min. These simulations have delimited the general modes of operation of this class of devices and have proven able to describe the complicated vortex structure and induced pressure gradients that arise. The computational work has furthermore been utilized to analyze design modifications that enhance the overall performance of these devices. The promising results indicate that proper CFD modeling may be successfully used as a tool for microgravity separator design.

A new design approach for enhancement of DC/RF characteristics with improved ambipolar conduction of charge plasma TFET: proposal, and optimization

NASA Astrophysics Data System (ADS)

Aslam, Mohd.; Sharma, Dheeraj; Yadav, Shivendra; Soni, Deepak; Bajaj, Varun

2018-04-01

This article presents a new device structure to suppress ambipolarity with enhanced electrostatic characteristics of charge plasma TFET (CP-TFET). Here, implantation of a metal angle (MA) of low workfunction inside the high-k dielectric (HfO2) layer near source/channel interface gives excellent improvement in DC and RF characteristics of the proposed device. Deposition of MA is advantageous to increase abruptness of source/channel junction for reducing the tunneling barrier. Along with MA placement, the metal electrode, which is placed over the silicon wafer for inducing N+ drain region, is divided into the two parts of low and high workfunctions. The workfunction of the part of metal electrode near the channel region is taken comparatively higher than the other part to restrict the tunneling of holes at drain/channel junction under negative bias (-V_gs) condition. Such concept induces asymmetrical concentration of charge carriers in the drain region, which widens the tunneling barrier at the drain/channel interface. Consequently, the proposed device shows better RF performance along with suppressed ambipolar conduction. Furthermore, reliability of conventional and proposed structures has been tested in terms of linearity. Simultaneously, the effect of workfunction and length variation of MA on the device characteristics is analyzed in optimization section of the article.

High mobility and high stability glassy metal-oxynitride materials and devices

NASA Astrophysics Data System (ADS)

Lee, Eunha; Kim, Taeho; Benayad, Anass; Hur, Jihyun; Park, Gyeong-Su; Jeon, Sanghun

2016-04-01

In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. However, zinc oxynitride has been suffered from poor reproducibility due to relatively low binding energy of nitrogen with zinc, resulting in the instability of composition and its device performance. Here we performed post argon plasma process on zinc oxynitride film, forming nano-crystalline structure in stable amorphous matrix which hampers the reaction of oxygen with zinc. Therefore, material properties and device performance of zinc oxynitride are greatly enhanced, exhibiting robust compositional stability even exposure to air, uniform phase, high electron mobility, negligible fast transient charging and low noise characteristics. Furthermore, We expect high mobility and high stability zinc oxynitride customized by plasma process to be applicable to a broad range of semiconductor and display devices.

Informatic analysis for hidden pulse attack exploiting spectral characteristics of optics in plug-and-play quantum key distribution system

NASA Astrophysics Data System (ADS)

Ko, Heasin; Lim, Kyongchun; Oh, Junsang; Rhee, June-Koo Kevin

2016-10-01

Quantum channel loopholes due to imperfect implementations of practical devices expose quantum key distribution (QKD) systems to potential eavesdropping attacks. Even though QKD systems are implemented with optical devices that are highly selective on spectral characteristics, information theory-based analysis about a pertinent attack strategy built with a reasonable framework exploiting it has never been clarified. This paper proposes a new type of trojan horse attack called hidden pulse attack that can be applied in a plug-and-play QKD system, using general and optimal attack strategies that can extract quantum information from phase-disturbed quantum states of eavesdropper's hidden pulses. It exploits spectral characteristics of a photodiode used in a plug-and-play QKD system in order to probe modulation states of photon qubits. We analyze the security performance of the decoy-state BB84 QKD system under the optimal hidden pulse attack model that shows enormous performance degradation in terms of both secret key rate and transmission distance.

Development of energy-saving devices for a full slow-speed ship through improving propulsion performance

NASA Astrophysics Data System (ADS)

Kim, Jung-Hun; Choi, Jung-Eun; Choi, Bong-Jun; Chung, Seok-Ho; Seo, Heung-Won

2015-06-01

Energy-saving devices for 317K VLCC have been developed from a propulsion standpoint. Two ESD candidates were designed via computational tools. The first device WAFon composes of flow-control fins adapted for the ship wake to reduce the loss of rotational energy. The other is WAFon-D, which is a WAFon with a duct to obtain additional thrust and to distribute the inflow velocity on the propeller plane uniform. After selecting the candidates from the computed results, the speed performances were validated with model-tests. The hydrodynamic characteristics of the ESDs may be found in improved hull and propulsive efficiencies through increased wake fraction.

Solid state high resolution multi-spectral imager CCD test phase

NASA Technical Reports Server (NTRS)

1973-01-01

The program consisted of measuring the performance characteristics of charge coupled linear imaging devices, and a study defining a multispectral imaging system employing advanced solid state photodetection techniques.

From dead leaves to sustainable organic resistive switching memory.

PubMed

Sun, Bai; Zhu, Shouhui; Mao, Shuangsuo; Zheng, Pingping; Xia, Yudong; Yang, Feng; Lei, Ming; Zhao, Yong

2018-03-01

An environmental-friendly, sustainable, pollution-free, biodegradable, flexible and wearable electronic device hold advanced potential applications. Here, an organic resistive switching memory device with Ag/Leaves/Ti/PET structure on a flexible polyethylene terephthalate (PET) substrate was fabricated for the first time. We observed an obvious resistive switching memory characteristic with large switching resistance ratio and stable cycle performance at room temperature. This work demonstrates that leaves, a useless waste, can be properly treated to make useful devices. Furthermore, the as-fabricated devices can be degraded naturally without damage to the environment. Copyright © 2017 Elsevier Inc. All rights reserved.

Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2007-01-01

Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

Bench-test comparison of 26 emergency and transport ventilators.

PubMed

L'Her, Erwan; Roy, Annie; Marjanovic, Nicolas

2014-10-15

Numerous emergency and transport ventilators are commercialized and new generations arise constantly. The aim of this study was to evaluate a large panel of ventilators to allow clinicians to choose a device, taking into account their specificities of use. This experimental bench-test took into account general characteristics and technical performances. Performances were assessed under different levels of FIO2 (100%, 50% or Air-Mix), respiratory mechanics (compliance 30,70,120 mL/cmH2O; resistance 5,10,20 cmH2O/mL/s), and levels of leaks (3.5 to 12.5 L/min), using a test lung. In total 26 emergency and transport ventilators were analyzed and classified into four categories (ICU-like, n = 5; Sophisticated, n = 10; Simple, n = 9; Mass-casualty and military, n = 2). Oxygen consumption (7.1 to 15.8 L/min at FIO2 100%) and the Air-Mix mode (FIO2 45 to 86%) differed from one device to the other. Triggering performance was heterogeneous, but several sophisticated ventilators depicted triggering capabilities as efficient as ICU-like ventilators. Pressurization was not adequate for all devices. At baseline, all the ventilators were able to synchronize, but with variations among respiratory conditions. Leak compensation in most ICU-like and 4/10 sophisticated devices was able to correct at least partially for system leaks, but with variations among ventilators. Major differences were observed between devices and categories, either in terms of general characteristics or technical reliability, across the spectrum of operation. Huge variability of tidal volume delivery with some devices in response to modifications in respiratory mechanics and FIO2 should make clinicians question their use in the clinical setting.

Hysteroscopic sterilization success in outpatient vs office setting is not affected by patient or procedural characteristics.

PubMed

Anderson, Ted L; Yunker, Amanda C; Scheib, Stacey A; Callahan, Tamara L

2013-01-01

To determine factors associated with hysteroscopic sterilization success and whether it differs between the operating room and office settings. Retrospective cohort analysis (Canadian Task Force classification II-2). Major university medical center. Six hundred thirty-eight women who underwent hysteroscopic sterilization between July 1, 2005, and June 30, 2011. Data collected included age, body mass index, previous office procedures, previous cesarean section, and presence of myomas or retroverted uterus. Place of surgery, experience of surgeon, insurance type, bilateral device placement, compliance with hysterosalpingography, and confirmation of occlusion were also recorded. Bivariate analysis of patient characteristics between groups was performed using χ(2) and independent t tests, and identified confounders and associated variables. Multivariate analysis was performed using logistic regression to assess for association and to adjust for confounders. Procedures were performed in the operating room (57%) or in the office (43%). There was no association between success in bilateral device placement or occlusion and any patient characteristic, regardless of surgery setting. Private insurance, patient age, and performance of procedures in the office setting were positively associated with likelihood of compliance with hysterosalpingography. Successful device placement and tubal occlusion are independent of patient age, body mass index, or setting of the procedure. Association between insurance type and completing hysterosalpingography illustrates an important public health problem. Patients who fail to undergo hysterosalpingography to confirm tubal occlusion may unknowingly be at risk of pregnancy and increased risk of ectopic pregnancy. Copyright © 2013 AAGL. Published by Elsevier Inc. All rights reserved.

Piezocone Penetration Testing Device

DOT National Transportation Integrated Search

2017-01-03

Hydraulic characteristics of soils can be estimated from piezocone penetration test (called PCPT hereinafter) by performing dissipation test or on-the-fly using advanced analytical techniques. This research report presents a method for fast estimatio...

Scattering effects on the performance of carbon nanotube field effect transistor in a compact model

NASA Astrophysics Data System (ADS)

Hamieh, S. D.; Desgreys, P.; Naviner, J. F.

2010-01-01

Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate I-V characteristics using VHDL-AMS simulator.

Variable temperature performance of a fully screen printed transistor switch

NASA Astrophysics Data System (ADS)

Zambou, Serges; Magunje, Batsirai; Rhyme, Setshedi; Walton, Stanley D.; Idowu, M. Florence; Unuigbe, David; Britton, David T.; Härting, Margit

2016-12-01

This article reports on the variable temperature performance of a flexible printed transistor which works as a current driven switch. In this work, electronic ink is formulated from nanostructured silicon produced by milling polycrystalline silicon. The study of the silicon active layer shows that its conductivity is based on thermal activation of carriers, and could be used as active layers in active devices. We further report on the transistors switching operation and their electrical performance under variable temperature. The reliability of the transistors at constant current bias was also investigated. Analysis of the electrical transfer characteristics from 340 to 10 K showed that the printed devices' current ON/OFF ratio increases as temperature decreases making it a better switch at lower temperatures. A constant current bias on a terminal for up to six hours shows extraordinary stability in electrical performance of the device.

Individual Characteristics and Unit Performance: A Review of Research and Methods

DTIC Science & Technology

1985-02-01

behavioral segments, improves performance. Simu- lation exercises , especially those employing new high-technology devices, provide surrogate...high-technology training simulation exercise MOB Military Occupational Specialty ORTT Operational Readiness Training Test-a field test REALTRAIN A...REAListic TRAINing simulation exercise SAM Surface-to-Air Missile SAT Scholastic Aptitude Test SQT Skill Qualification Test-an Army performance meas

Experiments on integral length scale control in atmospheric boundary layer wind tunnel

NASA Astrophysics Data System (ADS)

Varshney, Kapil; Poddar, Kamal

2011-11-01

Accurate predictions of turbulent characteristics in the atmospheric boundary layer (ABL) depends on understanding the effects of surface roughness on the spatial distribution of velocity, turbulence intensity, and turbulence length scales. Simulation of the ABL characteristics have been performed in a short test section length wind tunnel to determine the appropriate length scale factor for modeling, which ensures correct aeroelastic behavior of structural models for non-aerodynamic applications. The ABL characteristics have been simulated by using various configurations of passive devices such as vortex generators, air barriers, and slot in the test section floor which was extended into the contraction cone. Mean velocity and velocity fluctuations have been measured using a hot-wire anemometry system. Mean velocity, turbulence intensity, turbulence scale, and power spectral density of velocity fluctuations have been obtained from the experiments for various configuration of the passive devices. It is shown that the integral length scale factor can be controlled using various combinations of the passive devices.

Accelerated life testing effects on CMOS microcircuit characteristics

NASA Technical Reports Server (NTRS)

1977-01-01

Accelerated life tests were performed on CMOS microcircuits to predict their long term reliability. The consistency of the CMOS microcircuit activation energy between the range of 125 C to 200 C and the range 200 C to 250 C was determined. Results indicate CMOS complexity and the amount of moisture detected inside the devices after testing influences time to failure of tested CMOS devices.

14 CFR 91.1087 - Approval of aircraft simulators and other training devices.

Code of Federal Regulations, 2010 CFR

2010-01-01

... subpart must meet the following requirements: (1) It must be specifically approved for— (i) The program... maintain the performance, functional, and other characteristics that are required for approval. (3... conform with any modification to the aircraft being simulated that changes the performance, functional, or...

Design and Field Test of a Mass Efficient Crane for Lunar Payload Handling and Inspection: The Lunar Surface Manipulation System

NASA Technical Reports Server (NTRS)

Doggett, William R.; King, Bruce D.; Jones, Thomas Carno; Dorsey, John T.; Mikulas, Martin M.

2008-01-01

Devices for lifting, translating and precisely placing payloads are critical for efficient Earthbased construction operations. Both recent and past studies have demonstrated that devices with similar functionality will be needed to support lunar outpost operations. Lunar payloads include: a) prepackaged hardware and supplies which must be unloaded from landers and then accurately located at their operational site, b) sensor packages used for periodic inspection of landers, habitat surfaces, etc., and c) local materials such as regolith which require grading, excavation and placement. Although several designs have been developed for Earth based applications, these devices lack unique design characteristics necessary for transport to and use on the harsh lunar surface. These design characteristics include: a) composite components, b) compact packaging for launch, c) simple in-field reconfiguration and repair, and d) support for tele-operated or automated operations. Also, in contrast to Earth-based construction, where special purpose devices dominate a construction site, a lunar outpost will require versatile devices which provide operational benefit from initial construction through sustained operations. This paper will detail the design of a unique, high performance, versatile lifting device designed for operations on the lunar surface. The device is called the Lunar Surface Manipulation System to highlight the versatile nature of the device which supports conventional cable suspended crane operations as well as operations usually associated with a manipulator such as precise positioning where the payload is rigidly grappled by a tool attached to the tip of the device. A first generation test-bed to verify design methods and operational procedures is under development at the NASA Langley Research Center and recently completed field tests at Moses Lake Washington. The design relied on non-linear finite element analysis which is shown to correlate favorably with laboratory experiments. A key design objective, reviewed in this paper, is the device s simplicity, resulting from a focus on the minimum set of functions necessary to perform payload offload. Further development of the device has the potential for significant mass savings, with a high performance device incorporating composite elements estimated to have a mass less than 3% of the mass of the maximum lunar payload lifted at the tip. The paper will conclude with future plans for expanding the operational versatility of the device.

Human Factors Engineering and Ergonomics in Systems Engineering

NASA Technical Reports Server (NTRS)

Whitmore, Mihriban

2017-01-01

The study, discovery, and application of information about human abilities, human limitations, and other human characteristics to the design of tools, devices, machines, systems, job tasks and environments for effective human performance.

Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor.

PubMed

Kim, Yo-Han; Lee, Eun Yeol; Lee, Hyun Ho; Seo, Tae Seok

2017-05-17

Reduced graphene oxide quantum dot (rGOQD) devices in formats of capacitor and thin film transistor (TFT) were demonstrated and examined as the first trial to achieve nonambipolar channel property. In addition, through a gold nanoparticle (Au NP) layer embedded between the rGOQD active channel and dielectric layer, memory capacitor and TFT performances were realized by capacitance-voltage (C-V) hysteresis and gate program, erase, and reprogram biases. First, capacitor structure of the rGOQD memory device was constructed to examine memory charging effect featured in hysteretic C-V behavior with a 30 nm dielectric layer of cross-linked poly(vinyl alcohol). For the intervening Au NP charging layer, self-assembled monolayer (SAM) formation of the Au NP was executed to utilize electrostatic interaction by a dip-coating process under ambient environments with a conformal fabrication uniformity. Second, the rGOQD memory TFT device was also constructed in the same format of the Au NPs SAMs on a flexible substrate. Characteristics of the rGOQD TFT output showed novel saturation curves unlike typical graphene-based TFTs. However, The rGOQD TFT device reveals relatively low on/off ratio of 10 1 and mobility of 5.005 cm 2 /V·s. For the memory capacitor, the flat-band voltage shift (ΔV FB ) was measured as 3.74 V for ±10 V sweep, and for the memory TFT, the threshold voltage shift (ΔV th ) by the Au NP charging was detected as 7.84 V. In summary, it was concluded that the rGOQD memory device could accomplish an ideal graphene-based memory performance, which could have provided a wide memory window and saturated output characteristics.

Development of high-performance printed organic field-effect transistors and integrated circuits.

PubMed

Xu, Yong; Liu, Chuan; Khim, Dongyoon; Noh, Yong-Young

2015-10-28

Organic electronics is regarded as an important branch of future microelectronics especially suited for large-area, flexible, transparent, and green devices, with their low cost being a key benefit. Organic field-effect transistors (OFETs), the primary building blocks of numerous expected applications, have been intensively studied, and considerable progress has recently been made. However, there are still a number of challenges to the realization of high-performance OFETs and integrated circuits (ICs) using printing technologies. Therefore, in this perspective article, we investigate the main issues concerning developing high-performance printed OFETs and ICs and seek strategies for further improvement. Unlike many other studies in the literature that deal with organic semiconductors (OSCs), printing technology, and device physics, our study commences with a detailed examination of OFET performance parameters (e.g., carrier mobility, threshold voltage, and contact resistance) by which the related challenges and potential solutions to performance development are inspected. While keeping this complete understanding of device performance in mind, we check the printed OFETs' components one by one and explore the possibility of performance improvement regarding device physics, material engineering, processing procedure, and printing technology. Finally, we analyze the performance of various organic ICs and discuss ways to optimize OFET characteristics and thus develop high-performance printed ICs for broad practical applications.

A study of the suitability of ferrite for use in low-field insertion devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, K.; Hassenzahl, W.V.

1995-02-01

Most insertion devices built to date use rare-earth permanent-magnet materials, which have a high remanent field and are more expensive than many other permanent-magnet materials. Low-field insertion devices could use less-expensive, lower performance magnetic materials if they had suitable magnetic characteristics. These materials must be resistant to demagnetization during construction and operation of the insertion device, have uniform magnetization, possess low minor-axis magnetic moments, and have small minor field components on the surfaces. This paper describes an investigation to determine if ferrite possesses magnetic qualities suitable for insertion device applications. The type of ferrite investigated, MMPA Ceramic 8 from Stackpolemore » Inc., was found to be acceptable for insertion device applications.« less

Coated Porous Si for High Performance On-Chip Supercapacitors

NASA Astrophysics Data System (ADS)

Grigoras, K.; Keskinen, J.; Grönberg, L.; Ahopelto, J.; Prunnila, M.

2014-11-01

High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

CCD charge collection efficiency and the photon transfer technique

NASA Technical Reports Server (NTRS)

Janesick, J.; Klaasen, K.; Elliott, T.

1985-01-01

The charge-coupled device (CCD) has shown unprecendented performance as a photon detector in the areas of spectral response, charge transfer, and readout noise. Recent experience indicates, however, that the full potential for the CCD's charge collection efficiency (CCE) lies well beyond that which is realized in currently available devices. A definition of CCE performance is presented and a standard test tool (the photon transfer technique) for measuring and optimizing this important CCD parameter is introduced. CCE characteristics for different types of CCDs are compared; the primary limitations in achieving high CCE performance are discussed, and the prospects for future improvement are outlined.

Cavitation in centrifugal pump with rotating walls of axial inlet device

NASA Astrophysics Data System (ADS)

Moloshnyi, O.; Sotnyk, M.

2017-08-01

The article deals with the analysis of cavitation processes in the flowing part of the double entry centrifugal pump. The analysis is conducted using numerical modeling of the centrifugal pump operating process in the software environment ANSYS CFX. Two models of the axial inlet device is researched. It is shaped by a cylindrical section and diffuser section in front of the impeller, which includes fairing. The walls of the axial inlet device rotate with the same speed as the pump rotor. The numerical experiment is conducted under the condition of the flow rate change and absolute pressure at the inlet. The analysis shows that the pump has the average statistical cavitation performance. The occurrence of the cavitation in the axial inlet device is after narrowing the cross-section of flow channel and at the beginning of the diffuser section. Additional sudden expansion at the outlet of the axial inlet diffuser section does not affect the cavitation characteristics of the impeller, however, improves cavitation characteristics of the axial inlet device. For considered geometric parameters of the axial inlet device the cavitation in the impeller begins earlier than in the axial inlet device. That is, the considered design of the axial inlet device will not be subjected to destruction at the ensuring operation without cavitation in the impeller.

Electrical Stress Influences the Efficiency of CH3 NH3 PbI3 Perovskite Light Emitting Devices.

PubMed

Zhao, Lianfeng; Gao, Jia; Lin, YunHui L; Yeh, Yao-Wen; Lee, Kyung Min; Yao, Nan; Loo, Yueh-Lin; Rand, Barry P

2017-06-01

Organic-inorganic hybrid perovskite materials are emerging as semiconductors with potential application in optoelectronic devices. In particular, perovskites are very promising for light-emitting devices (LEDs) due to their high color purity, low nonradiative recombination rates, and tunable bandgap. Here, using pure CH 3 NH 3 PbI 3 perovskite LEDs with an external quantum efficiency (EQE) of 5.9% as a platform, it is shown that electrical stress can influence device performance significantly, increasing the EQE from an initial 5.9% to as high as 7.4%. Consistent with the enhanced device performance, both the steady-state photoluminescence (PL) intensity and the time-resolved PL decay lifetime increase after electrical stress, indicating a reduction in nonradiative recombination in the perovskite film. By investigating the temperature-dependent characteristics of the perovskite LEDs and the cross-sectional elemental depth profile, it is proposed that trap reduction and resulting device-performance enhancement is due to local ionic motion of excess ions, likely excess mobile iodide, in the perovskite film that fills vacancies and reduces interstitial defects. On the other hand, it is found that overstressed LEDs show irreversibly degraded device performance, possibly because ions initially on the perovskite lattice are displaced during extended electrical stress and create defects such as vacancies. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Analysis of vibration characteristics of opening device for deepwater robot cabin door and study of its structural optimization design

NASA Astrophysics Data System (ADS)

Zeng, Baoping; Liu, Jipeng; Zhang, Yu; Gong, Yajun; Hu, Sanbao

2017-12-01

Deepwater robots are important devices for human to explore the sea, which is being under development towards intellectualization, multitasking, long-endurance and large depth along with the development of science and technology. As far as a deep-water robot is concerned, its mechanical systems is an important subsystem because not only it influences the instrument measuring precision and shorten the service life of cabin devices but also its overlarge vibration and noise lead to disadvantageous effects to marine life within the operational area. Therefore, vibration characteristics shall be key factor for the deep-water robot system design. The sample collection and recycling system of some certain deepwater robot in a mechanism for opening the underwater cabin door for external operation and recycling test equipment is focused in this study. For improving vibration characteristics of locations of the cabin door during opening processes, a vibration model was established to the opening system; and the structural optimization design was carried out to its important structures by utilizing the multi-objective shape optimization and topology optimization method based on analysis of the system vibration. Analysis of characteristics of exciting forces causing vibration was first carried out, which include characteristics of dynamic loads within the hinge clearances and due to friction effects and the fluid dynamic exciting forces during processes of opening the cabin door. Moreover, vibration acceleration responses for a few important locations of the devices for opening the cabin cover were deduced by utilizing the modal synthesis method so that its rigidity and modal frequency may be one primary factor influencing the system vibration performances based on analysis of weighted acceleration responses. Thus, optimization design was carried out to the cabin cover by utilizing the multi-objective topology optimization method to perform reduction of weighted accelerations of key structure locations.

A generic approach for examining the effectiveness of traffic control devices in school zones.

PubMed

Zhao, Xiaohua; Li, Jiahui; Ding, Han; Zhang, Guohui; Rong, Jian

2015-09-01

The effectiveness and performance of traffic control devices in school zones have been impacted significantly by many factors, such as driver behavioral attributes, roadway geometric features, environmental characteristics, weather and visibility conditions, region-wide traffic regulations and policies, control modes, etc. When deploying traffic control devices in school zones, efforts are needed to clarify: (1) whether traffic control device installation is warranted; and (2) whether other device effectively complements this traffic control device and strengthens its effectiveness. In this study, a generic approach is developed to examine and evaluate the effectiveness of various traffic control devices deployed in school zones through driving simulator-based experiments. A Traffic Control Device Selection Model (TCDSM) is developed and two representative school zones are selected as the testbed in Beijing for driving simulation implementation to enhance its applicability. Statistical analyses are conducted to extract the knowledge from test data recorded by a driving simulator. Multiple measures of effectiveness (MOEs) are developed and adopted including average speed, relative speed difference, and standard deviation of acceleration for traffic control device performance quantification. The experimental tests and analysis results reveal that the appropriateness of the installation of certain traffic control devices can be statistically verified by TCDSM. The proposed approach provides a generic framework to assess traffic control device performance in school zones including experiment design, statistical formulation, data analysis, simulation model implementation, data interpretation, and recommendation development. Copyright © 2015 Elsevier Ltd. All rights reserved.

Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

DOE PAGES

Coltrin, Michael E.; Baca, Albert G.; Kaplar, Robert J.

2017-10-26

In this paper, predicted lateral power device performance as a function of alloy composition is characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility, critical electric field, and sheet carrier density. The paper presents calculations of AlGaN electron mobility in lateral devices such as HEMTs across the entire alloy composition range. Alloy scattering and optical polar phonon scattering are the dominant mechanisms limiting carrier mobility. Due to the significant degradation of mobility from alloy scattering, at room temperature Al fractions greater than about 85% are required for improved LFOM relative to GaN using a conservative sheet chargemore » density of 1 × 10 13 cm –2. However, at higher temperatures at which AlGaN power devices are anticipated to operate, this “breakeven” composition decreases to about 65% at 500 K, for example. For high-frequency applications, the Johnson figure-of-merit (JFOM) is the relevant metric to compare potential device performance across materials platforms. At room temperature, the JFOM for AlGaN alloys is predicted to surpass that of GaN for Al fractions greater than about 40%.« less

Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coltrin, Michael E.; Baca, Albert G.; Kaplar, Robert J.

In this paper, predicted lateral power device performance as a function of alloy composition is characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility, critical electric field, and sheet carrier density. The paper presents calculations of AlGaN electron mobility in lateral devices such as HEMTs across the entire alloy composition range. Alloy scattering and optical polar phonon scattering are the dominant mechanisms limiting carrier mobility. Due to the significant degradation of mobility from alloy scattering, at room temperature Al fractions greater than about 85% are required for improved LFOM relative to GaN using a conservative sheet chargemore » density of 1 × 10 13 cm –2. However, at higher temperatures at which AlGaN power devices are anticipated to operate, this “breakeven” composition decreases to about 65% at 500 K, for example. For high-frequency applications, the Johnson figure-of-merit (JFOM) is the relevant metric to compare potential device performance across materials platforms. At room temperature, the JFOM for AlGaN alloys is predicted to surpass that of GaN for Al fractions greater than about 40%.« less

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

NASA Astrophysics Data System (ADS)

Jian, Guangzhong; He, Qiming; Mu, Wenxiang; Fu, Bo; Dong, Hang; Qin, Yuan; Zhang, Ying; Xue, Huiwen; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tao, Xutang; Liu, Ming

2018-01-01

β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current-voltage and capacitance-voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ ¯ b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A.cm-2.K-2, which is close to the theoretical value of 41.11 A.cm-2.K-2. The differences between the barrier heights determined using the capacitance-voltage and current-voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

Modeling synchronous voltage source converters in transmission system planning studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kosterev, D.N.

1997-04-01

A Voltage Source Converter (VSC) can be beneficial to power utilities in many ways. To evaluate the VSC performance in potential applications, the device has to be represented appropriately in planning studies. This paper addresses VSC modeling for EMTP, powerflow, and transient stability studies. First, the VSC operating principles are overviewed, and the device model for EMTP studies is presented. The ratings of VSC components are discussed, and the device operating characteristics are derived based on these ratings. A powerflow model is presented and various control modes are proposed. A detailed stability model is developed, and its step-by-step initialization proceduremore » is described. A simplified stability model is also derived under stated assumptions. Finally, validation studies are performed to demonstrate performance of developed stability models and to compare it with EMTP simulations.« less

Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain

NASA Astrophysics Data System (ADS)

Liu, Liang-kui; Shi, Cheng; Zhang, Yi-bo; Sun, Lei

2017-04-01

A tri gate Ge-based tunneling field-effect transistor (TFET) has been numerically studied with technology computer aided design (TCAD) tools. Dopant segregated Schottky source/drain is applied to the device structure design (DS-TFET). The characteristics of the DS-TFET are compared and analyzed comprehensively. It is found that the performance of n-channel tri gate DS-TFET with a positive bias is insensitive to the dopant concentration and barrier height at n-type drain, and that the dopant concentration and barrier height at a p-type source considerably affect the device performance. The domination of electron current in the entire BTBT current of this device accounts for this phenomenon and the tri-gate DS-TFET is proved to have a higher performance than its dual-gate counterpart.

The use of lower resolution viewing devices for mammographic interpretation: implications for education and training.

PubMed

Chen, Yan; James, Jonathan J; Turnbull, Anne E; Gale, Alastair G

2015-10-01

To establish whether lower resolution, lower cost viewing devices have the potential to deliver mammographic interpretation training. On three occasions over eight months, fourteen consultant radiologists and reporting radiographers read forty challenging digital mammography screening cases on three different displays: a digital mammography workstation, a standard LCD monitor, and a smartphone. Standard image manipulation software was available for use on all three devices. Receiver operating characteristic (ROC) analysis and ANOVA (Analysis of Variance) were used to determine the significance of differences in performance between the viewing devices with/without the application of image manipulation software. The effect of reader's experience was also assessed. Performance was significantly higher (p < .05) on the mammography workstation compared to the other two viewing devices. When image manipulation software was applied to images viewed on the standard LCD monitor, performance improved to mirror levels seen on the mammography workstation with no significant difference between the two. Image interpretation on the smartphone was uniformly poor. Film reader experience had no significant effect on performance across all three viewing devices. Lower resolution standard LCD monitors combined with appropriate image manipulation software are capable of displaying mammographic pathology, and are potentially suitable for delivering mammographic interpretation training. • This study investigates potential devices for training in mammography interpretation. • Lower resolution standard LCD monitors are potentially suitable for mammographic interpretation training. • The effect of image manipulation tools on mammography workstation viewing is insignificant. • Reader experience had no significant effect on performance in all viewing devices. • Smart phones are not suitable for displaying mammograms.

A high performance transparent resistive switching memory made from ZrO{sub 2}/AlON bilayer structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Tsung-Ling; Chang, Hsiang-Yu; Tseng, Tseung-Yuen, E-mail: tseng@cc.nctu.edu.tw

2016-04-11

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO{sub 2})/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO{sub 2}/ITO single layer device, the ITO/ZrO{sub 2}/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by formingmore » an asymmetrical conductive filament with the weakest part at the ZrO{sub 2}/AlON interface. Therefore, in the ITO/ZrO{sub 2}/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.« less

Design and Verification of a Shape Memory Polymer Peripheral Occlusion Device

PubMed Central

Landsman, Todd L.; Bush, Ruth L.; Glowczwski, Alan; Horn, John; Jessen, Staci L.; Ungchusri, Ethan; Diguette, Katelin; Smith, Harrison R.; Hasan, Sayyeda M.; Nash, Daniel; Clubb, Fred J.; Maitland, Duncan J.

2017-01-01

Shape memory polymer foams have been previously investigated for their safety and efficacy in treating a porcine aneurysm model. Their biocompatibility, rapid thrombus formation, and ability for endovascular catheter-based delivery to a variety of vascular beds makes these foams ideal candidates for use in numerous embolic applications, particularly within the peripheral vasculature. This study sought to investigate the material properties, safety, and efficacy of a shape memory polymer peripheral embolization device in vitro. The material characteristics of the device were analyzed to show tunability of the glass transition temperature (Tg) and the expansion rate of the polymer to ensure adequate time to deliver the device through a catheter prior to excessive foam expansion. Mechanical analysis and flow migration studies were performed to ensure minimal risk of vessel perforation and undesired thromboembolism upon device deployment. The efficacy of the device was verified by performing blood flow studies that established affinity for thrombus formation and blood penetration throughout the foam and by delivery of the device in an ultrasound phantom that demonstrated flow stagnation and diversion of flow to collateral pathways. PMID:27419615

Design and verification of a shape memory polymer peripheral occlusion device.

PubMed

Landsman, Todd L; Bush, Ruth L; Glowczwski, Alan; Horn, John; Jessen, Staci L; Ungchusri, Ethan; Diguette, Katelin; Smith, Harrison R; Hasan, Sayyeda M; Nash, Daniel; Clubb, Fred J; Maitland, Duncan J

2016-10-01

Shape memory polymer foams have been previously investigated for their safety and efficacy in treating a porcine aneurysm model. Their biocompatibility, rapid thrombus formation, and ability for endovascular catheter-based delivery to a variety of vascular beds makes these foams ideal candidates for use in numerous embolic applications, particularly within the peripheral vasculature. This study sought to investigate the material properties, safety, and efficacy of a shape memory polymer peripheral embolization device in vitro. The material characteristics of the device were analyzed to show tunability of the glass transition temperature (Tg) and the expansion rate of the polymer to ensure adequate time to deliver the device through a catheter prior to excessive foam expansion. Mechanical analysis and flow migration studies were performed to ensure minimal risk of vessel perforation and undesired thromboembolism upon device deployment. The efficacy of the device was verified by performing blood flow studies that established affinity for thrombus formation and blood penetration throughout the foam and by delivery of the device in an ultrasound phantom that demonstrated flow stagnation and diversion of flow to collateral pathways. Copyright © 2016 Elsevier Ltd. All rights reserved.

Tunneling and Origin of Large Access Resistance in Layered-Crystal Organic Transistors

NASA Astrophysics Data System (ADS)

Hamai, Takamasa; Arai, Shunto; Minemawari, Hiromi; Inoue, Satoru; Kumai, Reiji; Hasegawa, Tatsuo

2017-11-01

Layered crystallinity of organic semiconductors is crucial to obtaining high-performance organic thin-film transistors (OTFTs), as it allows both smooth-channel-gate-insulator interface formation and efficient two-dimensional carrier transport along the interface. However, the role of vertical transport across the crystalline molecular layers in device operations has not been a crucial subject so far. Here, we show that the interlayer carrier transport causes unusual nonlinear current-voltage characteristics and enormous access resistance in extremely high-quality single-crystal OTFTs based on 2-decyl-7-phenyl[1]-benzothieno[3 ,2 -b ][1]benzothiophene (Ph -BTBT -C10 ) that involve inherent multiple semiconducting π -conjugated layers interposed, respectively, by electrically inert alkyl-chain layers. The output characteristics present layer-number (n )-dependent nonlinearity that becomes more evident at larger n (1 ≤n ≤15 ), demonstrating tunneling across multiple alkyl-chain layers. The n -dependent device mobility and four-probe measurements reveal that the alkyl-chain layers generate a large access resistance that suppresses the device mobility from the intrinsic value of about 20 cm2 V-1 s-1 . Our findings clarify the reason why device characteristics are distributed in single-crystal OTFTs.

Moving Large Data Sets Over High-Performance Long Distance Networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hodson, Stephen W; Poole, Stephen W; Ruwart, Thomas

2011-04-01

In this project we look at the performance characteristics of three tools used to move large data sets over dedicated long distance networking infrastructure. Although performance studies of wide area networks have been a frequent topic of interest, performance analyses have tended to focus on network latency characteristics and peak throughput using network traffic generators. In this study we instead perform an end-to-end long distance networking analysis that includes reading large data sets from a source file system and committing large data sets to a destination file system. An evaluation of end-to-end data movement is also an evaluation of themore » system configurations employed and the tools used to move the data. For this paper, we have built several storage platforms and connected them with a high performance long distance network configuration. We use these systems to analyze the capabilities of three data movement tools: BBcp, GridFTP, and XDD. Our studies demonstrate that existing data movement tools do not provide efficient performance levels or exercise the storage devices in their highest performance modes. We describe the device information required to achieve high levels of I/O performance and discuss how this data is applicable in use cases beyond data movement performance.« less

A Flexible and Thin Graphene/Silver Nanowires/Polymer Hybrid Transparent Electrode for Optoelectronic Devices.

PubMed

Dong, Hua; Wu, Zhaoxin; Jiang, Yaqiu; Liu, Weihua; Li, Xin; Jiao, Bo; Abbas, Waseem; Hou, Xun

2016-11-16

A typical thin and fully flexible hybrid electrode was developed by integrating the encapsulation of silver nanowires (AgNWs) network between a monolayer graphene and polymer film as a sandwich structure. Compared with the reported flexible electrodes based on PET or PEN substrate, this unique electrode exhibits the superior optoelectronic characteristics (sheet resistance of 8.06 Ω/□ at 88.3% light transmittance). Meanwhile, the specific up-to-bottom fabrication process could achieve the superflat surface (RMS = 2.58 nm), superthin thickness (∼8 μm thickness), high mechanical robustness, and lightweight. In addition, the strong corrosion resistance and stability for the hybrid electrode were proved. With these advantages, we employ this electrode to fabricate the simple flexible organic light-emitting device (OLED) and perovskite solar cell device (PSC), which exhibit the considerable performance (best PCE of OLED = 2.11 cd/A 2 ; best PCE of PSC = 10.419%). All the characteristics of the unique hybrid electrode demonstrate its potential as a high-performance transparent electrode candidate for flexible optoelectronics.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.

PubMed

Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C

2016-04-01

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giusi, G.; Giordano, O.; Scandurra, G.

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less

Development of a test rig for a helium twin-screw compressor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, B. M.; Hu, Z. J.; Zhang, P.

2014-01-29

A large helium cryogenic system is being developed for use in great science projects, such as the International Thermonuclear Experimental Reactor (ITER), Large Helical Device (LHD), and the Experimental Advanced Superconducting Tokamak (EAST). In this cryogenic system, a twin-screw compressor is a key component. Therefore, it is necessary to obtain the compressor performance. To obtain the performance characteristics, a test rig for the compressor has been built. All the important performance parameters, including adiabatic efficiency, volumetric efficiency, oil injection characteristic, and noise characteristic can be acquired with the rig when sensors are installed in the test system. With the testmore » performance, the helium twin-screw compressor can be evaluated. Using these results, the design of the compressor can be improved.« less

Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes.

PubMed

Liu, Yang; Wei, Nan; Zhao, Qingliang; Zhang, Dehui; Wang, Sheng; Peng, Lian-Mao

2015-04-21

High performance infrared (IR) imaging systems usually require expensive cooling systems, which are highly undesirable. Here we report the fabrication and performance characteristics of room temperature carbon nanotube (CNT) IR imaging sensors. The CNT IR imaging sensor is based on aligned semiconducting CNT films with 99% purity, and each pixel or device of the imaging sensor consists of aligned strips of CNT asymmetrically contacted by Sc and Pd. We found that the performance of the device is dependent on the CNT channel length. While short channel devices provide a large photocurrent and a rapid response of about 110 μs, long channel length devices exhibit a low dark current and a high signal-to-noise ratio which are critical for obtaining high detectivity. In total, 36 CNT IR imagers are constructed on a single chip, each consists of 3 × 3 pixel arrays. The demonstrated advantages of constructing a high performance IR system using purified semiconducting CNT aligned films include, among other things, fast response, excellent stability and uniformity, ideal linear photocurrent response, high imaging polarization sensitivity and low power consumption.

A miniature Hopkinson experiment device based on multistage reluctance coil electromagnetic launch.

PubMed

Huang, Wenkai; Huan, Shi; Xiao, Ying

2017-09-01

A set of seven-stage reluctance miniaturized Hopkinson bar electromagnetic launcher has been developed in this paper. With the characteristics of high precision, small size, and little noise pollution, the device complies with the requirements of miniaturized Hopkinson bar for high strain rate. The launcher is a seven-stage accelerating device up to 65.5 m/s. A high performance microcontroller is used to control accurately the discharge of capacitor sets, by means of which the outlet velocity of the projectile can be controlled within a certain velocity range.

A miniature Hopkinson experiment device based on multistage reluctance coil electromagnetic launch

NASA Astrophysics Data System (ADS)

Huang, Wenkai; Huan, Shi; Xiao, Ying

2017-09-01

A set of seven-stage reluctance miniaturized Hopkinson bar electromagnetic launcher has been developed in this paper. With the characteristics of high precision, small size, and little noise pollution, the device complies with the requirements of miniaturized Hopkinson bar for high strain rate. The launcher is a seven-stage accelerating device up to 65.5 m/s. A high performance microcontroller is used to control accurately the discharge of capacitor sets, by means of which the outlet velocity of the projectile can be controlled within a certain velocity range.

Influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavlidis, D.; Cazaux, J.L.; Graffeuil, J.

1988-04-01

The RF small-signal performance of GaAs MESFET's and MMIC amplifiers as a function of various ion-implanted profiles is theoretically and experimentally investigated. Implantation energy, dose, and recess depth influence are theoretically analyzed with the help of a specially developed device simulator. The performance of MMIC amplifiers processed with various energies, doses, recess depths, and bias conditions is discussed and compared to experimental characteristics. Some criteria are finally proposed for the choice of implantation conditions and process in order to optimize the characteristics of ion-implanted FET's and to realize process-tolerant MMIC amplifiers.

Study of performance and propagation characteristics of wire and planar structures around human body.

PubMed

Aroul, A L Praveen; Bhatia, Dinesh

2011-01-01

Continued miniaturization of electronic devices and technological advancements in wireless communications has made wearable body-centric telemedicine systems viable. Antennas play a crucial role in characterizing the efficiency and reliability of these systems. The performance characteristics such as the radiation pattern, gain, efficiency of the antennas get adversely affected due to the presence of lossy human body tissues. In this paper we investigate the above mentioned performance parameters and radio frequency transmission properties of wire and planar structures operating at ISM frequency band of 2.40-2.50 GHz in the proximity of human body.

Characterization of perovskite solar cells: Towards a reliable measurement protocol

NASA Astrophysics Data System (ADS)

Zimmermann, Eugen; Wong, Ka Kan; Müller, Michael; Hu, Hao; Ehrenreich, Philipp; Kohlstädt, Markus; Würfel, Uli; Mastroianni, Simone; Mathiazhagan, Gayathri; Hinsch, Andreas; Gujar, Tanaji P.; Thelakkat, Mukundan; Pfadler, Thomas; Schmidt-Mende, Lukas

2016-09-01

Lead halide perovskite solar cells have shown a tremendous rise in power conversion efficiency with reported record efficiencies of over 20% making this material very promising as a low cost alternative to conventional inorganic solar cells. However, due to a differently severe "hysteretic" behaviour during current density-voltage measurements, which strongly depends on scan rate, device and measurement history, preparation method, device architecture, etc., commonly used solar cell measurements do not give reliable or even reproducible results. For the aspect of commercialization and the possibility to compare results of different devices among different laboratories, it is necessary to establish a measurement protocol which gives reproducible results. Therefore, we compare device characteristics derived from standard current density-voltage measurements with stabilized values obtained from an adaptive tracking of the maximum power point and the open circuit voltage as well as characteristics extracted from time resolved current density-voltage measurements. Our results provide insight into the challenges of a correct determination of device performance and propose a measurement protocol for a reliable characterisation which is easy to implement and has been tested on varying perovskite solar cells fabricated in different laboratories.

Sentaurus® based modeling and simulation for GFET's characteristic for ssDNA immobilization and hybridization

NASA Astrophysics Data System (ADS)

Yunfang, Jia; Cheng, Ju

2016-01-01

The graphene field effect transistor (GFET) has been widely studied and developed as sensors and functional devices. The first report about GFET sensing simulation on the device level is proposed. The GFET's characteristics, its responding for single strand DNA (ssDNA) and hybridization with the complimentary DNA (cDNA) are simulated based on Sentaurus, a popular CAD tool for electronic devices. The agreement between the simulated blank GFET feature and the reported experimental data suggests the feasibility of the presented simulation method. Then the simulations of ssDNA immobilization on GFET and hybridization with its cDNA are performed, the results are discussed based on the electron transfer (ET) mechanism between DNA and graphene. Project supported by the National Natural Science Foundation of China (No. 61371028) and the Tianjin Natural Science Foundation (No. 12JCZDJC22400).

Study and characterization of a MEMS micromirror device

NASA Astrophysics Data System (ADS)

Furlong, Cosme; Pryputniewicz, Ryszard J.

2004-08-01

In this paper, advances in our study and characterization of a MEMS micromirror device are presented. The micromirror device, of 510 mm characteristic length, operates in a dynamic mode with a maximum displacement on the order of 10 mm along its principal optical axis and oscillation frequencies of up to 1.3 kHz. Developments are carried on by analytical, computational, and experimental methods. Analytical and computational nonlinear geometrical models are developed in order to determine the optimal loading-displacement operational characteristics of the micromirror. Due to the operational mode of the micromirror, the experimental characterization of its loading-displacement transfer function requires utilization of advanced optical metrology methods. Optoelectronic holography (OEH) methodologies based on multiple wavelengths that we are developing to perform such characterization are described. It is shown that the analytical, computational, and experimental approach is effective in our developments.

Micromachined structures for vertical microelectrooptical devices on InP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seassal, C.; Leclercq, J.L.; Letartre, X.

1996-12-31

The authors presented a microstructuring method in order to fabricate tunable vertical resonant cavity optical devices. PL characterizations were performed on a test structure in order to evaluate the effect of the cavity thickness on the peak characteristics. Modeling of the mechanical, electrostatic, and optical behavior of the device, PL simulation were performed, and showed a good agreement with the experiments. This is a first preliminary validation of InP-based MOEMS for further realization of tunable wavelength-selective passive filters, or photodiodes and lasers by incorporating active region within the cavity. Micro-reflectivity measurements with a spatial resolution of 20 {micro}m are underwaymore » in their group, in order to measure directly the resonance shift and spectral linewidth.« less

Analysis of javelin throwing by high-speed photography

NASA Astrophysics Data System (ADS)

Yamamoto, Yoshitaka; Matsuoka, Rutsu; Ishida, Yoshihisa; Seki, Kazuichi

1999-06-01

A xenon multiple exposure light source device was manufactured to record the trajectory of a flying javelin, and a wind tunnel experiment was performed with some javelin models to analyze the flying characteristics of the javelin. Furthermore, form of javelin throwing by athletes was recorded to estimate the characteristics in the form of each athlete using a high speed cameras.

Wind tunnel research concerning lateral control devices, particularly at high angles of attack VII : Handley Page tip and full-span slots with ailerons and spoilers

NASA Technical Reports Server (NTRS)

Weick, Fred E; Wenzinger, Carl J

1933-01-01

Tests were made with ordinary ailerons and different sizes of spoilers on rectangular Clark Y wing models with Handley Page tip and full span slots. The tests showed the effect of the control devices on the general performance of the wings as well as on the lateral control and lateral stability characteristics.

Applications and Methods for Continuous Monitoring of Physiological Chemistry

DTIC Science & Technology

2016-02-04

product and test platform to verify the performance characteristics of the enzymes when used in diagnostic device fabrication. 1.3 Results This...project had three primary objectives: 1. Engineer a cortisol oxidase enzyme suitable for use in diagnostic devices 2. Large scale production and...for both animal and human use , and for direct sale to other entities to manufacture biosensors and other products for human monitoring. The enzymes

An in silico analysis of oxygen uptake of a mild COPD patient during rest and exercise using a portable oxygen concentrator

PubMed Central

Katz, Ira; Pichelin, Marine; Montesantos, Spyridon; Kang, Min-Yeong; Sapoval, Bernard; Zhu, Kaixian; Thevenin, Charles-Philippe; McCoy, Robert; Martin, Andrew R; Caillibotte, Georges

2016-01-01

Oxygen treatment based on intermittent-flow devices with pulse delivery modes available from portable oxygen concentrators (POCs) depends on the characteristics of the delivered pulse such as volume, pulse width (the time of the pulse to be delivered), and pulse delay (the time for the pulse to be initiated from the start of inhalation) as well as a patient’s breathing characteristics, disease state, and respiratory morphology. This article presents a physiological-based analysis of the performance, in terms of blood oxygenation, of a commercial POC at different settings using an in silico model of a COPD patient at rest and during exercise. The analysis encompasses experimental measurements of pulse volume, width, and time delay of the POC at three different settings and two breathing rates related to rest and exercise. These experimental data of device performance are inputs to a physiological-based model of oxygen uptake that takes into account the real dynamic nature of gas exchange to illustrate how device- and patient-specific factors can affect patient oxygenation. This type of physiological analysis that considers the true effectiveness of oxygen transfer to the blood, as opposed to delivery to the nose (or mouth), can be instructive in applying therapies and designing new devices. PMID:27729783

Age-related differences in processing visual device and task characteristics when using technical devices.

PubMed

Oehl, M; Sutter, C

2015-05-01

With aging visual feedback becomes increasingly relevant in action control. Consequently, visual device and task characteristics should more and more affect tool use. Focussing on late working age, the present study aims to investigate age-related differences in processing task irrelevant (display size) and task relevant visual information (task difficulty). Young and middle-aged participants (20-35 and 36-64 years of age, respectively) sat in front of a touch screen with differently sized active touch areas (4″ to 12″) and performed pointing tasks with differing task difficulties (1.8-5 bits). Both display size and age affected pointing performance, but the two variables did not interact and aiming duration moderated both effects. Furthermore, task difficulty affected the pointing durations of middle-aged adults moreso than those of young adults. Again, aiming duration accounted for the variance in the data. The onset of an age-related decline in aiming duration can be clearly located in middle adulthood. Thus, the fine psychomotor ability "aiming" is a moderator and predictor for age-related differences in pointing tasks. The results support a user-specific design for small technical devices with touch interfaces. Copyright © 2014 Elsevier Ltd and The Ergonomics Society. All rights reserved.

A Practical Scoring System to Select Optimally Sized Devices for Percutaneous Patent Foramen Ovale Closure.

PubMed

Venturini, Joseph M; Retzer, Elizabeth M; Estrada, J Raider; Mediratta, Anuj; Friant, Janet; Nathan, Sandeep; Paul, Jonathan D; Blair, John; Lang, Roberto M; Shah, Atman P

2016-10-01

Patent foramen ovale (PFO) has been linked to cryptogenic stroke, and closure has been reported to improve clinical outcomes. However, there are no clear guidelines to direct device sizing. This study sought to use patient characteristics and echocardiographic findings to create a prediction score for device sizing. This was a retrospective review of patients undergoing percutaneous PFO closure at our institution between July 2010 and December 2014. Demographic and clinical characteristics were recorded, and all pre- and intraprocedural echocardiography results were evaluated. Thirty-six patients underwent percutaneous PFO closure during the study period. All procedures were performed using an Amplatzer Septal Occluder "Cribriform" (ASOC) device in one of three disc diameters: 25, 30, or 35 mm. Closure was indicated for cryptogenic stroke/transient ischemic attack in 75% of cases. Every case (100%) was successful with durable shunt correction at the 6-month follow-up without complications of erosion or device embolization. The presence of atrial septal aneurysm (ASA) ( p = 0.027) and PFO tunnel length >10 mm ( p = 0.038) were independently associated with increased device size. A scoring system of 1 point for male sex, 1 point for ASA, and 1 point for PFO tunnel >10 mm long was associated with the size of closure device implanted ( p = 0.006). A simple scoring system may be used to select an optimally sized device for percutaneous PFO closure using the ASOC device.

Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

NASA Astrophysics Data System (ADS)

Mamor, M.; Fu, Y.; Nur, O.; Willander, M.; Bengtsson, S.

We investigate, both experimentally and theoretically, current and capacitance (I-V/C-V) characteristics and the device performance of Si/SiO2/Si single-barrier varactor diodes (SBVs). Two diodes were fabricated with different SiO2 layer thicknesses using the state-of-the-art wafer bonding technique. The devices have very low leakage currents (about 5×10-2 and 1.8×10-2 mA/mm2) and intrinsic capacitance levels of typically 1.5 and 50 nF/mm2 for diodes with 5-nm and 20-nm oxide layers, respectively. With the present device physical parameters (25-mm2 device area, 760-μm modulation layer thickness and 1015-cm-3 doping level), the estimated cut-off frequency is about 5×107 Hz. With the physical parameters of the present existing III-V triplers, the cut-off frequency of our Si-based SBV can be as high as 0.5 THz.

Cathode Formed by Thermal Evaporation of Ba:Al Alloy and Estimations of Barrier Height in an Organic LED

NASA Astrophysics Data System (ADS)

Ding, Lei; Zhang, Fang-Hui

2011-06-01

It is demonstrated that barium and aluminum alloy synthesized by melting in a glass tube under low vacuum is applicable for organic laser emitting diodes (LEDs) as a thin film cathode. The alloy film obtained by the thermal evaporation of pre-synthesized alloy is used in a single-boat organic LED device with the structure: indium tin oxide (ITO)/4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(NPB)/tris-(8-hydroxyquinoline) aluminum(Alq3)/barium:aluminum alloy. The experimental results show that devices with this alloy film cathode exhibit better current density-voltage-luminance characteristics than those with a conventional pure Al cathode, and more weight of barium in aluminum leads to better performance of the devices. Characteristics of current density versus voltage for the electron-only devices are fitted by the Richardson—Schottky emission model, indicating that the electron injection barrier has a decrease of about 0.3 eV by this alloy cathode.

[Aerodynamic characteristics of crewman's arms during windblast].

PubMed

Zhang, Yun-ran; Wu, Gui-rong

2003-10-01

To study the aerodynamic characteristics of crewman's arms with or without protective devices in the status with raised legs or not. The experiments were performed in an FL-24 transonic and supersonic wind tunnel, over Mach number range of 0.4-2.0, with 5 degrees-30 degrees angles of attack, 0 degrees - 90 degrees sideslip angles and Re number of (0.93-3.1) x 10(6). The test model was a 1/5-scale crewman/ejection seat combination. The aerodynamic characteristics of the various sections of crewman's arms were studied and analyzed. The results showed that 1) The effect of raised leg on the aerodynamic characteristics of the crewman's arms was very evident, and was related to the status of leg raising; 2) The sideslip considerably increased aerodynamic loads on the crewman's arms, in particular when beta=50 degrees the loads was severe in the test; 3) The tested protective devices was valid, the effectiveness of wind deflector in protecting crewman's arms was evident; 4) A formula for calculating aerodynamic force acting on crewman's arms was presented. 1)The tested protective devices was valid, and the effectiveness of wind deflector in protecting crewman's arms was evident; 2) An aerodynamic basis for the development of crewman windblast protective device was presented; 3)The calculation formula presented is useful in estimating aerodynamic forces of crewman's arms.

Physiological properties of brain-machine interface input signals.

PubMed

Slutzky, Marc W; Flint, Robert D

2017-08-01

Brain-machine interfaces (BMIs), also called brain-computer interfaces (BCIs), decode neural signals and use them to control some type of external device. Despite many experimental successes and terrific demonstrations in animals and humans, a high-performance, clinically viable device has not yet been developed for widespread usage. There are many factors that impact clinical viability and BMI performance. Arguably, the first of these is the selection of brain signals used to control BMIs. In this review, we summarize the physiological characteristics and performance-including movement-related information, longevity, and stability-of multiple types of input signals that have been used in invasive BMIs to date. These include intracortical spikes as well as field potentials obtained inside the cortex, at the surface of the cortex (electrocorticography), and at the surface of the dura mater (epidural signals). We also discuss the potential for future enhancements in input signal performance, both by improving hardware and by leveraging the knowledge of the physiological characteristics of these signals to improve decoding and stability. Copyright © 2017 the American Physiological Society.

A Comparison of Mobile and Fixed Device Access on User Engagement Associated With Women, Infants, and Children (WIC) Online Nutrition Education.

PubMed

Brusk, John J; Bensley, Robert J

2016-11-15

Online health education has expanded its reach due to cost-effective implementation and demonstrated effectiveness. However, a limitation exists with the evaluation of online health education implementations and how the impact of the system is attenuated by the extent to which a user engages with it. Moreover, the current online health education research does not consider how this engagement has been affected by the transition from fixed to mobile user access over the last decade. This paper focuses on comparing the impact mobile versus fixed devices have on user engagement key performance indicators (KPI) associated with the wichealth website (.org), an Internet-based parent-child feeding intervention offered to clients associated with the US Department of Agriculture's Special Supplemental Nutrition Program for Women, Infants, and Children (WIC). Data were collected from 612,201 nutrition education lessons completed by 305,735 unique WIC participants in 21 states over a 1-year period. Data consisted of system-collected measures, profile items, and items from an exit survey administered at the conclusion of each lesson. User engagement was defined based on 3 KPIs associated with usage of the wichealth website: number of link views, link view time, and progression in stage of readiness to change. Independent samples t tests were used to compare KPIs between fixed only and mobile only device users and paired samples t tests were used to compare KPIs within users who completed at least one lesson each on both a fixed and mobile device. A logistic regression was performed to estimate the odds of KPI performance thresholds in the independent samples study group given access device type while controlling for confounding of user characteristics associated with these KPIs. Analysis of 8 user characteristics (lessons completed, race, ethnicity, language, state of residence, pregnancy status, beginning stage of change, and preferred nutrition education method) were significantly (P<.001) related to various KPI differences between mobile and fixed device access. Non-mobile users were significantly (P<.001) more likely to engage based on all 3 KPIs, even after logistic regression control for the potential confounding related to the strongly associated user characteristics identified. The findings of this study support the idea that online health education developers need to seriously consider access device when creating programs. Online health education developers need to take extra effort to truly understand access patterns of populations being served, and whether or not access device will influence user engagement performance indicators. ©John J Brusk, Robert J Bensley. Originally published in JMIR Research Protocols (http://www.researchprotocols.org), 15.11.2016.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bouchier, F.; Ahrens, J.S.; Wells, G.

One thing that all access control applications have in common is the need to identify those individuals authorized to gain access to an area. Traditionally, the identification is based on something that person possesses, such as a key or badge, or something they know, such as a PIN or password. Biometric identifiers make their decisions based on the physiological or behavioral characteristics of individuals. The potential of biometrics devices to positively identify individuals has made them attractive for use in access control and computer security applications. However, no systems perform perfectly, so it is important to understand what a biometricmore » device`s performance is under real world conditions before deciding to implement one in an access control system. This paper will describe the evaluation of a prototype biometric identifier provided by IriScan Incorporated. This identifier was developed to recognize individual human beings based on the distinctive visual characteristics of the irises of their eyes. The main goal of the evaluation was to determine whether the system has potential as an access control device within the Department of Energy (DOE). The primary interest was an estimate of the accuracy of the system in terms of false accept and false reject rates. Data was also collected to estimate throughput time and user acceptability. The performance of the system during the test will be discussed. Lessons learned during the test which may aid in further testing and simplify implementation of a production system will also be discussed.« less

Research on the laser transmission characteristics simulation and comprehensive test in complex channel environment

NASA Astrophysics Data System (ADS)

Fu, Qiang; Liu, Jianhua; Wang, Xiaoman; Jiang, Huilin; Liu, Zhi

2014-12-01

The laser transmission characteristics affected in the complex channel environment, which limits the performance of laser equipment and engineering application severely. The article aim at the influence of laser transmission in atmospheric and seawater channels, summarizes the foreign researching work of the simulation and comprehensive test regarding to the laser transmission characteristics in complex environment. And researched the theory of atmospheric turbulence effect, water attenuation features, and put forward the corresponding theoretical model. And researched the simulate technology of atmospheric channel and sea water channel, put forward the analog device plan, adopt the similar theory of flowing to simulate the atmosphere turbulence .When the flowing has the same condition of geometric limits including the same Reynolds, they must be similar to each other in the motivation despite of the difference in the size, speed, and intrinsic quality. On this basis, set up a device for complex channel simulation and comprehensive testing, the overall design of the structure of the device, Hot and Cold Air Convection Simulation of Atmospheric Turbulence, mainly consists of cell body, heating systems, cooling systems, automatic control system. he simulator provides platform and method for the basic research of laser transmission characteristics in the domestic.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

NASA Astrophysics Data System (ADS)

Younis, Adnan; Chu, Dewei; Li, Sean

2015-09-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

PubMed Central

Younis, Adnan; Chu, Dewei; Li, Sean

2015-01-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective. PMID:26324073

Silicon Micromachining in RF and Photonic Applications

NASA Technical Reports Server (NTRS)

Lin, Tsen-Hwang; Congdon, Phil; Magel, Gregory; Pang, Lily; Goldsmith, Chuck; Randall, John; Ho, Nguyen

1995-01-01

Texas Instruments (TI) has developed membrane and micromirror devices since the late 1970s. An eggcrate space membrane was used as the spatial light modulator in the early years. Discrete micromirrors supported by cantilever beams created a new era for micromirror devices. Torsional micromirror and flexure-beam micromirror devices were promising for mass production because of their stable supports. TI's digital torsional micromirror device is an amplitude modulator (known as the digital micromirror device (DMD) and is in production development, discussed elsewhere. We also use a torsional device for a 4 x 4 fiber-optic crossbar switch in a 2 cm x 2 cm package. The flexure-beam micromirror device is an analog phase modulator and is considered more efficient than amplitude modulators for use in optical processing systems. TI also developed millimeter-sized membranes for integrated optical switches for telecommunication and network applications. Using a member in radio frequency (RF) switch applications is a rapidly growing area because of the micromechanical device performance in microsecond-switching characteristics. Our preliminary membrane RF switch test structure results indicate promising speed and RF switching performance. TI collaborated with MIT for modeling of metal-based micromachining.

Advanced Materials for High Temperature, High Performance, Wide Bandgap Power Modules

NASA Astrophysics Data System (ADS)

O'Neal, Chad B.; McGee, Brad; McPherson, Brice; Stabach, Jennifer; Lollar, Richard; Liederbach, Ross; Passmore, Brandon

2016-01-01

Advanced packaging materials must be utilized to take full advantage of the benefits of the superior electrical and thermal properties of wide bandgap power devices in the development of next generation power electronics systems. In this manuscript, the use of advanced materials for key packaging processes and components in multi-chip power modules will be discussed. For example, to date, there has been significant development in silver sintering paste as a high temperature die attach material replacement for conventional solder-based attach due to the improved thermal and mechanical characteristics as well as lower processing temperatures. In order to evaluate the bond quality and performance of this material, shear strength, thermal characteristics, and void quality for a number of silver sintering paste materials were analyzed as a die attach alternative to solder. In addition, as high voltage wide bandgap devices shift from engineering samples to commercial components, passivation materials become key in preventing premature breakdown in power modules. High temperature, high dielectric strength potting materials were investigated to be used to encapsulate and passivate components internal to a power module. The breakdown voltage up to 30 kV and corresponding leakage current for these materials as a function of temperature is also presented. Lastly, high temperature plastic housing materials are important for not only discrete devices but also for power modules. As the operational temperature of the device and/or ambient temperature increases, the mechanical strength and dielectric properties are dramatically reduced. Therefore, the electrical characteristics such as breakdown voltage and leakage current as a function of temperature for housing materials are presented.

Effect of a PEDOT:PSS modified layer on the electrical characteristics of flexible memristive devices based on graphene oxide:polyvinylpyrrolidone nanocomposites

NASA Astrophysics Data System (ADS)

Kim, Woo Kyum; Wu, Chaoxing; Kim, Tae Whan

2018-06-01

The electrical characteristics of flexible memristive devices utilizing a graphene oxide (GO):polyvinylpyrrolidone (PVP) nanocomposite charge-trapping layer with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-modified layer fabricated on an indium-tin-oxide (ITO)-coated polyethylene glycol naphthalate (PEN) substrate were investigated. Current-voltage (I-V) curves for the Al/GO:PVP/PEDOT:PSS/ITO/PEN devices showed remarkable hysteresis behaviors before and after bending. The maximum memory margins of the devices before and after 100 bending cycles were approximately 7.69 × 103 and 5.16 × 102, respectively. The devices showed nonvolatile memory effect with a retention time of more than 1 × 104 s. The "Reset" voltages were distributed between 2.3 and 3.5 V, and the "Set" voltages were dispersed between -0.7 and -0.2 V, indicative of excellent, uniform electrical performance. The endurance number of ON/OFF-switching and bending cycles for the devices was 1 × 102, respectively. The bipolar resistive switching behavior was explained on the basis of I-V results. In particular, the bipolar resistive switching behaviors of the LRS and the HRS for the devices are dominated by the Ohmic and space charge current mechanisms, respectively.

Probing scattering mechanisms with symmetric quantum cascade lasers.

PubMed

Deutsch, Christoph; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron M; Klang, Pavel; Kubis, Tillmann; Klimeck, Gerhard; Schuster, Manfred E; Schrenk, Werner; Strasser, Gottfried; Unterrainer, Karl

2013-03-25

A characteristic feature of quantum cascade lasers is their unipolar carrier transport. We exploit this feature and realize nominally symmetric active regions for terahertz quantum cascade lasers, which should yield equal performance with either bias polarity. However, symmetric devices exhibit a strongly bias polarity dependent performance due to growth direction asymmetries, making them an ideal tool to study the related scattering mechanisms. In the case of an InGaAs/GaAsSb heterostructure, the pronounced interface asymmetry leads to a significantly better performance with negative bias polarity and can even lead to unidirectionally working devices, although the nominal band structure is symmetric. The results are a direct experimental proof that interface roughness scattering has a major impact on transport/lasing performance.

Multi-Axis Force Sensor for Human-Robot Interaction Sensing in a Rehabilitation Robotic Device.

PubMed

Grosu, Victor; Grosu, Svetlana; Vanderborght, Bram; Lefeber, Dirk; Rodriguez-Guerrero, Carlos

2017-06-05

Human-robot interaction sensing is a compulsory feature in modern robotic systems where direct contact or close collaboration is desired. Rehabilitation and assistive robotics are fields where interaction forces are required for both safety and increased control performance of the device with a more comfortable experience for the user. In order to provide an efficient interaction feedback between the user and rehabilitation device, high performance sensing units are demanded. This work introduces a novel design of a multi-axis force sensor dedicated for measuring pelvis interaction forces in a rehabilitation exoskeleton device. The sensor is conceived such that it has different sensitivity characteristics for the three axes of interest having also movable parts in order to allow free rotations and limit crosstalk errors. Integrated sensor electronics make it easy to acquire and process data for a real-time distributed system architecture. Two of the developed sensors are integrated and tested in a complex gait rehabilitation device for safe and compliant control.

Suspended Carbon Nanotubes for Humidity Sensing

PubMed Central

Arunachalam, Shivaram; Gupta, Anubha A.; Izquierdo, Ricardo

2018-01-01

A room temperature microfabrication technique using SU8, an epoxy-based highly functional photoresist as a sacrificial layer, is developed to obtain suspended aligned carbon nanotube beams. The humidity-sensing characteristics of aligned suspended single-walled carbon nanotube films are studied. A comparative study between suspended and non-suspended architectures is done by recording the resistance change in the nanotubes under humidity. For the tests, the humidity was varied from 15% to 98% RH. A comparative study between suspended and non-suspended devices shows that the response and recovery times of the suspended devices was found to be almost 3 times shorter than the non-suspended devices. The suspended devices also showed minimal hysteresis even after 10 humidity cycles, and also exhibit enhanced sensitivity. Repeatability tests were performed by subjecting the sensors to continuous humidification cycles. All tests reported here have been performed using pristine non-functionalized nanotubes. PMID:29786661

Suspended Carbon Nanotubes for Humidity Sensing.

PubMed

Arunachalam, Shivaram; Gupta, Anubha A; Izquierdo, Ricardo; Nabki, Frederic

2018-05-22

A room temperature microfabrication technique using SU8, an epoxy-based highly functional photoresist as a sacrificial layer, is developed to obtain suspended aligned carbon nanotube beams. The humidity-sensing characteristics of aligned suspended single-walled carbon nanotube films are studied. A comparative study between suspended and non-suspended architectures is done by recording the resistance change in the nanotubes under humidity. For the tests, the humidity was varied from 15% to 98% RH. A comparative study between suspended and non-suspended devices shows that the response and recovery times of the suspended devices was found to be almost 3 times shorter than the non-suspended devices. The suspended devices also showed minimal hysteresis even after 10 humidity cycles, and also exhibit enhanced sensitivity. Repeatability tests were performed by subjecting the sensors to continuous humidification cycles. All tests reported here have been performed using pristine non-functionalized nanotubes.

Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

NASA Astrophysics Data System (ADS)

Ma, Zehao; Ooi, Poh Choon; Li, Fushan; Yun, Dong Yeol; Kim, Tae Whan

2015-10-01

Nonvolatile memory (NVM) devices based on a metal-insulator-metal structure consisting of CdSe/ZnS quantum dots embedded in polymethylsilsesquioxane dielectric layers were fabricated. The current-voltage ( I- V) curves showed a bistable current behavior and the presence of hysteresis. The current-time ( I- t) curves showed that the fabricated NVM memory devices were stable up to 1 × 104 s with a distinct ON/OFF ratio of 104 and were reprogrammable when the endurance test was performed. The extrapolation of the I- t curve to 105 s with corresponding current ON/OFF ratio 1 × 105 indicated a long performance stability of the NVM devices. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current and Child-Langmuir law were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I- V characteristics.

System characterization of RiceWrist-S: a forearm-wrist exoskeleton for upper extremity rehabilitation.

PubMed

Pehlivan, Ali Utku; Rose, Chad; O'Malley, Marcia K

2013-06-01

Rehabilitation of the distal joints of the upper extremities is crucial to restore the ability to perform activities of daily living to patients with neurological lesions resulting from stroke or spinal cord injury. Robotic rehabilitation has been identified as a promising new solution, however, much of the existing technology in this field is focused on the more proximal joints of the upper arm. A recently presented device, the RiceWrist-S, focuses on the rehabilitation of the forearm and wrist, and has undergone a few important design changes. This paper first addresses the design improvements achieved in the recent design iteration, and then presents the system characterization of the new device. We show that the RiceWrist-S has capabilities beyond other existing devices, and exhibits favorable system characteristics as a rehabilitation device, in particular torque output, range of motion, closed loop position performance, and high spatial resolution.

Improved Performance of h-BN Encapsulated Double Gate Graphene Nanomesh Field Effect Transistor for Short Channel Length

NASA Astrophysics Data System (ADS)

Tiwari, Durgesh Laxman; Sivasankaran, K.

This paper presents improved performance of Double Gate Graphene Nanomesh Field Effect Transistor (DG-GNMFET) with h-BN as substrate and gate oxide material. The DC characteristics of 0.95μm and 5nm channel length devices are studied for SiO2 and h-BN substrate and oxide material. For analyzing the ballistic behavior of electron for 5nm channel length, von Neumann boundary condition is considered near source and drain contact region. The simulated results show improved saturation current for h-BN encapsulated structure with two times higher on current value (0.375 for SiO2 and 0.621 for h-BN) as compared to SiO2 encapsulated structure. The obtained result shows h-BN to be a better substrate and oxide material for graphene electronics with improved device characteristics.

Parallel Polarization State Generation

NASA Astrophysics Data System (ADS)

She, Alan; Capasso, Federico

2016-05-01

The control of polarization, an essential property of light, is of wide scientific and technological interest. The general problem of generating arbitrary time-varying states of polarization (SOP) has always been mathematically formulated by a series of linear transformations, i.e. a product of matrices, imposing a serial architecture. Here we show a parallel architecture described by a sum of matrices. The theory is experimentally demonstrated by modulating spatially-separated polarization components of a laser using a digital micromirror device that are subsequently beam combined. This method greatly expands the parameter space for engineering devices that control polarization. Consequently, performance characteristics, such as speed, stability, and spectral range, are entirely dictated by the technologies of optical intensity modulation, including absorption, reflection, emission, and scattering. This opens up important prospects for polarization state generation (PSG) with unique performance characteristics with applications in spectroscopic ellipsometry, spectropolarimetry, communications, imaging, and security.

Switching of transmission resonances in a two-channels coupler: A Boundary Wall Method scattering study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nunes, A.; Zanetti, F.M.; Lyra, M.L., E-mail: marcelo@fis.ufal.br

2016-10-15

In this work, we study the transmission characteristics of a two-channels coupler model system using the Boundary Wall Method (BWM) to determine the solution of the corresponding scattering problem of an incident plane wave. We show that the BWM provides detailed information regarding the transmission resonances. In particular, we focus on the case of single channel input aiming to explore the energy switching performance of the coupler. We show that the coupler geometry can be tailored to allow for the first transmission resonances to be predominantly transmitted on specific output channels, an important characteristic for the realization of logical operations.more » - Highlights: • The switching performance of a coupled waveguide device is studied via the boundary wall method. • The method efficiently identifies all resonant transmission modes. • Energy switching is controlled and optimized as a function of the device geometry.« less

Haptic device development based on electro static force of cellulose electro active paper

NASA Astrophysics Data System (ADS)

Yun, Gyu-young; Kim, Sang-Youn; Jang, Sang-Dong; Kim, Dong-Gu; Kim, Jaehwan

2011-04-01

Haptic is one of well-considered device which is suitable for demanding virtual reality applications such as medical equipment, mobile devices, the online marketing and so on. Nowadays, many of concepts for haptic devices have been suggested to meet the demand of industries. Cellulose has received much attention as an emerging smart material, named as electro-active paper (EAPap). The EAPap is attractive for mobile haptic devices due to its unique characteristics in terms of low actuation power, suitability for thin devices and transparency. In this paper, we suggest a new concept of haptic actuator with the use of cellulose EAPap. Its performance is evaluated depending on various actuation conditions. As a result, cellulose electrostatic force actuator shows a large output displacement and fast response, which is suitable for mobile haptic devices.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1983-01-01

GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

Compact high reliability fiber coupled laser diodes for avionics and related applications

NASA Astrophysics Data System (ADS)

Daniel, David R.; Richards, Gordon S.; Janssen, Adrian P.; Turley, Stephen E. H.; Stockton, Thomas E.

1993-04-01

This paper describes a newly developed compact high reliability fiber coupled laser diode which is capable of providing enhanced performance under extreme environmental conditions including a very wide operating temperature range. Careful choice of package materials to minimize thermal and mechanical stress, used with proven manufacturing methods, has resulted in highly stable coupling of the optical fiber pigtail to a high performance MOCVD-grown Multi-Quantum Well laser chip. Electro-optical characteristics over temperature are described together with a demonstration of device stability over a range of environmental conditions. Real time device lifetime data is also presented.

Photovoltaic test and demonstration project. [residential energy program

NASA Technical Reports Server (NTRS)

Forestieri, A. F.; Brandhorst, H. W., Jr.; Deyo, J. N.

1976-01-01

The considered project consists of three subprojects related to applications, device performance and diagnostics, and endurance testing. The objectives of the applications subproject include the determination of the operating characteristics for a variety of photovoltaic conversion systems. A system test facility is being constructed in this connection and a prototype residence experiment is to be conducted. Market demand for solar cells is to be stimulated by demonstrating suitability of solar cells for specific near-term applications. Activities conducted in connection with device performance studies and diagnostics are also discussed along with developments in the area of endurance testing.

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

NASA Astrophysics Data System (ADS)

Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

2017-05-01

Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive electro-optic characterization of these components will be presented.

A novel cuffless device for self-measurement of blood pressure: concept, performance and clinical validation.

PubMed

Boubouchairopoulou, N; Kollias, A; Chiu, B; Chen, B; Lagou, S; Anestis, P; Stergiou, G S

2017-07-01

A pocket-size cuffless electronic device for self-measurement of blood pressure (BP) has been developed (Freescan, Maisense Inc., Zhubei, Taiwan). The device estimates BP within 10 s using three embedded electrodes and one force sensor that is applied over the radial pulse to evaluate the pulse wave. Before use, basic anthropometric characteristics are recorded on the device, and individualized initial calibration is required based on a standard BP measurement performed using an upper-arm BP monitor. The device performance in providing valid BP readings was evaluated in 313 normotensive and hypertensive adults in three study phases during which the device sensor was upgraded. A formal validation study of a prototype device against mercury sphygmomanometer was performed according to the American National Standards Institute/Association for the Advancement of Medical Instrumentation/International Organization for Standardization (ANSI/AAMI/ISO) 2013 protocol. The test device succeeded in obtaining a valid BP measurement (three successful readings within up to five attempts) in 55-72% of the participants, which reached 87% with device sensor upgrade. For the validation study, 125 adults were recruited and 85 met the protocol requirements for inclusion. The mean device-observers BP difference was 3.2±6.7 (s.d.) mm Hg for systolic and 2.6±4.6 mm Hg for diastolic BP (criterion 1). The estimated s.d. (inter-subject variability) were 5.83 and 4.17 mm Hg respectively (criterion 2). These data suggest that this prototype cuffless BP monitor provides valid self-measurements in the vast majority of adults, and satisfies the BP measurement accuracy criteria of the ANSI/AAMI/ISO 2013 validation protocol.

A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field

NASA Astrophysics Data System (ADS)

Arab Bafrani, Hamidreza; Ebrahimi, Mahdi; Bagheri Shouraki, Saeed; Moshfegh, Alireza Z.

2018-01-01

Memristor devices have attracted tremendous interest due to different applications ranging from nonvolatile data storage to neuromorphic computing units. Exploring the role of surface roughness of the bottom electrode (BE)/active layer interface provides useful guidelines for the optimization of the memristor switching performance. This study focuses on the effect of surface roughness of the BE electrode on the switching characteristics of Au/TiO2/Au three-layer memristor devices. An optimized wet-etching treatment condition was found to modify the surface roughness of the Au BE where the measurement results indicate that the roughness of the Au BE is affected by both duration time and solution concentrations of the wet-etching process. Then we fabricated arrays of TiO2-based nanostructured memristors sandwiched between two sets of cross-bar Au electrode lines (junction area 900 μm2). The results revealed a reduction in the working voltages in current-voltage characteristic of the device performance when increasing the surface roughness at the Au(BE)/TiO2 active layer interface. The set voltage of the device (Vset) significantly decreased from 2.26-1.93 V when we increased the interface roughness from 4.2-13.1 nm. The present work provides information for better understanding the switching mechanism of titanium-dioxide-based devices, and it can be inferred that enhancing the roughness of the Au BE/TiO2 active layer interface leads to a localized non-uniform electric field distribution that plays a vital role in reducing the energy consumption of the device.

Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls

PubMed Central

Currivan-Incorvia, J. A.; Siddiqui, S.; Dutta, S.; Evarts, E. R.; Zhang, J.; Bono, D.; Ross, C. A.; Baldo, M. A.

2016-01-01

Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable to emerging material physics. Here we present prototypes of a logic device that encode information in the position of a magnetic domain wall in a ferromagnetic wire. We show that a single three-terminal device can perform inverter and buffer operations. We demonstrate one device can drive two subsequent gates and logic propagation in a circuit of three inverters. This prototype demonstration shows that magnetic domain wall logic devices have the necessary characteristics for future computing, including nonlinearity, gain, cascadability, and room temperature operation. PMID:26754412

Comparative study of I- V methods to extract Au/FePc/p-Si Schottky barrier diode parameters

NASA Astrophysics Data System (ADS)

Oruç, Çiğdem; Altındal, Ahmet

2018-01-01

So far, various methods have been proposed to extract the Schottky diode parameters from measured current-voltage characteristics. In this work, Schottky barrier diode with structure of Au/2(3),9(10),16(17),23(24)-tetra(4-(4-methoxyphenyl)-8-methylcoumarin-7 oxy) phthalocyaninatoiron(II) (FePc)/p-Si was fabricated and current-voltage measurements were carried out on it. In addition, current-voltage measurements were also performed on Au/p-Si structure, without FePc, to clarify the influence of the presence of an interface layer on the device performance. The measured current-voltage characteristics indicate that the interface properties of a Schottky barrier diode can be controlled by the presence of an organic interface layer. It is found that the room temperature barrier height of Au/FePc/p-Si structure is larger than that of the Au/p-Si structure. The obtained forward bias current-voltage characteristics of the Au/FePc/p-Si device was analysed by five different analytical methods. It is found that the extracted values of SBD parameters strongly depends on the method used.

Effect of transient liquid flow on retention characteristics of screen acquisition systems. [design of Space Shuttle feed system

NASA Technical Reports Server (NTRS)

Cady, E. C.

1977-01-01

A design analysis, is developed based on experimental data, to predict the effects of transient flow and pressure surges (caused either by valve or pump operation, or by boiling of liquids in warm lines) on the retention performance of screen acquisition systems. A survey of screen liquid acquisition system applications was performed to determine appropriate system environment and classification. A screen model was developed which assumed that the screen device was a uniformly distributed composite orthotropic structure, and which accounted for liquid inflow/outflow, gas ingestion quality, screen stress, and liquid spill. A series of 177 tests using 13 specimens (5 screen meshes, 4 screen device construction/backup methods, and 2 orientations) with three test fluids (isopropyl alcohol, Freon 114, and LH2) provided data which verified important features of the screen model and resulted in a design tool which could accurately predict the transient startup performance acquisition devices.

Performance study of thermo-electric generator

NASA Astrophysics Data System (ADS)

Rohit, G.; Manaswini, D.; Kotebavi, Vinod; R, Nagaraja S.

2017-07-01

Devices like automobiles, stoves, ovens, boilers, kilns and heaters dissipate large amount of waste heat. Since most of this waste heat goes unused, the efficiency of these devices is drastically reduced. A lot of research is being conducted on the recovery of the waste heat, among which Thermoelectric Generators (TEG) is one of the popular method. TEG is a semiconductor device that produces electric potential difference when a thermal gradient develops on it. This paper deals with the study of performance of a TEG module for different hot surface temperatures. Performance characteristics used here are voltage, current and power developed by the TEG. One side of the TEG was kept on a hot plate where uniform heat flux was supplied to that. And the other side was cooled by supplying cold water. The results show that the output power increases significantly with increase in the temperature of the hot surface.

Performance enhancement of pentacene-based organic thin-film transistors using 6,13-pentacenequinone as a carrier injection interlayer

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Wei-Chun; Chen, Hao-Wei

2018-06-01

This work demonstrates pentacene-based organic thin-film transistors (OTFTs) fabricated by inserting a 6,13-pentacenequinone (PQ) carrier injection layer between the source/drain (S/D) metal Au electrodes and pentacene channel layer. Compared to devices without a PQ layer, the performance characteristics including field-effect mobility, threshold voltage, and On/Off current ratio were significantly improved for the device with a 5-nm-thick PQ interlayer. These improvements are attributed to significant reduction of hole barrier height at the Au/pentacene channel interfaces. Therefore, it is believed that using PQ as the carrier injection layer is a good candidate to improve the pentacene-based OTFTs electrical performance.

Capillary Two-Phase Thermal Devices for Space Applications

NASA Technical Reports Server (NTRS)

Ku, Jentung

2016-01-01

This is the presentation file for an invited seminar for Department of Mechanical and Aerospace Engineering at the Case Western Reserve University. The seminar is scheduled for April 1, 2016.Description: This presentation will discuss operating principles and performance characteristics of heat pipes (HPs) and loop heat pipes (LHPs) and their application for spacecraft thermal control. Topics include: 1) HP operating principles; 2) HP performance characteristics; 3) LHP pressure profiles; 4) LHP operating temperature; 5) LHP operating temperature control; and 6) Examples of using HPs and LHPs on NASA flight projects.

A rotating electrical transfer device

NASA Technical Reports Server (NTRS)

Porter, R. S.

1985-01-01

The design, development, and performance characteristics of two roll ring configurations - a roll ring being a device used in transferring electrical energy across a continuously rotating or oscillating interface through one or more flexible rolling contacts, or flexures are described. Emphasis is placed on the design problems and solutions encountered during development in the areas of flexure fatigue, contact electroplating, electrical noise, and control of interface geometry. Also, the present status of each configuration is summarized.

Wind-tunnel research comparing lateral control devices, particularly at high angles of attack XII : upper-surface ailerons on wings with split flaps

NASA Technical Reports Server (NTRS)

Weick, Fred E; Wenzinger, Carl J

1935-01-01

This report covers the twelfth of a series of tests conducted to compare different lateral control devices with particular reference to their effectiveness at high angles of attack. The present wind tunnel tests were made with two sizes of upper-surface ailerons on rectangular Clark Y wing models equipped with full span split flaps. The tests showed the effect of the upper-surface ailerons and of the split flaps on the general performance characteristics of the wings, and on the lateral controllability and stability characteristics. The results are compared with those for plain wings with ordinary ailerons of similar sizes.

Scaling of Performance in Liquid Propellant Rocket Engine Combustors

NASA Technical Reports Server (NTRS)

Hulka, James R.

2007-01-01

This paper discusses scaling of combustion and combustion performance in liquid propellant rocket engine combustion devices. In development of new combustors, comparisons are often made between predicted performance in a new combustor and measured performance in another combustor with different geometric and thermodynamic characteristics. Without careful interpretation of some key features, the comparison can be misinterpreted and erroneous information used in the design of the new device. This paper provides a review of this performance comparison, including a brief review of the initial liquid rocket scaling research conducted during the 1950s and 1960s, a review of the typical performance losses encountered and how they scale, a description of the typical scaling procedures used in development programs today, and finally a review of several historical development programs to see what insight they can bring to the questions at hand.

Effects of Piezoelectric Potential of ZnO on Resistive Switching Characteristics of Flexible ZnO/TiO2 Heterojunction Cells

NASA Astrophysics Data System (ADS)

Li, Hongxia; Zhou, You; Du, Gang; Huang, Yanwei; Ji, Zhenguo

2018-03-01

Flexible resistance random access memory (ReRAM) devices with a heterojunction structure of PET/ITO/ZnO/TiO2/Au were fabricated on polyethylene terephthalate/indium tin oxide (PET/ITO) substrates by different physical and chemical preparation methods. X-ray diffraction, scanning electron microscopy and atomic force microscopy were carried out to investigate the crystal structure, surface topography and cross-sectional structure of the prepared films. X-ray photoelectron spectroscopy was also used to identify the chemical state of Ti, O and Zn elements. Theoretical and experimental analyses were conducted to identify the effect of piezoelectric potential of ZnO on resistive switching characteristics of flexible ZnO/TiO2 heterojunction cells. The results showed a pathway to enhance the performance of ReRAM devices by engineering the interface barrier, which is also feasible for other electronics, optoelectronics and photovoltaic devices.

Changes in the performance characteristics of a GaAs near infrared light emitting diode when exposed to various current and thermal stresses

NASA Technical Reports Server (NTRS)

Thomas, E. F., Jr.

1974-01-01

The changes that occurred in the optical and electrical characteristics of a near infrared, GaAs light emitting diode, when operated under various levels and combinations of current and thermal stresses are discussed. A total of forty parts were operated for two thousand hours under eight different sets of dc current and ambient temperature conditions. Degradation in the radiant optical power of these devices was thirty-four percent when operated at their rated current and an ambient temperature of 298K (25 C). Derating the current and/or the thermal stress reduced the degradation of this parameter in approximately a linear manner. All degraded devices behaved similarly, exhibiting rapid nonlinear degradation followed by a gradual linear degradation and finally a period of stable operation. An attempt was made to correlate initial device condition to degradation during stress testing, but met with little success.

Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Luo, B.; Kim, Jihyun; Ren, F.; Gillespie, J. K.; Fitch, R. C.; Sewell, J.; Dettmer, R.; Via, G. D.; Crespo, A.; Jenkins, T. J.; Gila, B. P.; Onstine, A. H.; Allums, K. K.; Abernathy, C. R.; Pearton, S. J.; Dwivedi, R.; Fogarty, T. N.; Wilkins, R.

2003-03-01

Sc2O3-passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10 years in low-earth orbit (5×109 cm-2). Devices with an AlGaN cap layer showed less degradation in dc characteristics than comparable GaN-cap devices, consistent with differences in average band energy. The changes in device performance could be attributed completely to bulk trapping effects, demonstrating that the effectiveness of the Sc2O3 layers in passivating surface states in the drain-source region was undiminished by the proton irradiation. Sc2O3-passivated AlGaN/HEMTs appear to be attractive candidates for space and terrestrial applications where resistance to high fluxes of ionizing radiation is a criteria.

Sensor Technology and Performance Characteristics

EPA Science Inventory

The US EPA is currently involved in detailed laboratory and/or field studies involving a wide variety of low cost air quality sensors currently being made available to potential citizen scientists. These devices include sensors associated with the monitoring of nitrogen dioxide (...

Charge transport in quantum dot organic solar cells with Si quantum dots sandwiched between poly(3-hexylthiophene) (P3HT) absorber and bathocuproine (BCP) transport layers

NASA Astrophysics Data System (ADS)

Verma, Upendra Kumar; Kumar, Brijesh

2017-10-01

We have modeled a multilayer quantum dot organic solar cell that explores the current-voltage characteristic of the solar cell whose characteristics can be tuned by varying the fabrication parameters of the quantum dots (QDs). The modeled device consists of a hole transport layer (HTL) which doubles up as photon absorbing layer, several quantum dot layers, and an electron transport layer (ETL). The conduction of charge carriers in HTL and ETL has been modeled by the drift-diffusion transport mechanism. The conduction and recombination in the quantum dot layers are described by a system of coupled rate equations incorporating tunneling and bimolecular recombination. Analysis of QD-solar cells shows improved device performance compared to the similar bilayer and trilayer device structures without QDs. Keeping other design parameters constant, solar cell characteristics can be controlled by the quantum dot layers. Bimolecular recombination coefficient of quantum dots is a prime factor which controls the open circuit voltage (VOC) without any significant reduction in short circuit current (JSC).

High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Ahmari, David Abbas

Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.

Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits

NASA Astrophysics Data System (ADS)

Gundlach, D. J.; Royer, J. E.; Park, S. K.; Subramanian, S.; Jurchescu, O. D.; Hamadani, B. H.; Moad, A. J.; Kline, R. J.; Teague, L. C.; Kirillov, O.; Richter, C. A.; Kushmerick, J. G.; Richter, L. J.; Parkin, S. R.; Jackson, T. N.; Anthony, J. E.

2008-03-01

The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive low-temperature deposition and patterning techniques, which typically lead to lower device performance. We report a low-cost approach to control the microstructure of solution-cast acene-based organic thin films through modification of interfacial chemistry. Chemically and selectively tailoring the source/drain contact interface is a novel route to initiating the crystallization of soluble organic semiconductors, leading to the growth on opposing contacts of crystalline films that extend into the transistor channel. This selective crystallization enables us to fabricate high-performance organic thin-film transistors and circuits, and to deterministically study the influence of the microstructure on the device characteristics. By connecting device fabrication to molecular design, we demonstrate that rapid film processing under ambient room conditions and high performance are not mutually exclusive.

Effects of device size and material on the bending performance of resistive-switching memory devices fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Lee, Won-Ho; Yoon, Sung-Min

2017-05-01

The resistive change memory (RCM) devices using amorphous In-Ga-Zn-O (IGZO) and microcrystalline Al-doped ZnO (AZO) thin films were fabricated on plastic substrates and characterized for flexible electronic applications. The device cell sizes were varied to 25 × 25, 50 × 50, 100 × 100, and 200 × 200 μm2 to examine the effects of cell size on the resistive-switching (RS) behaviors at a flat state and under bending conditions. First, it was found that the high-resistance state programmed currents markedly increased with the increase in the cell size. Second, while the AZO RCM devices did not exhibit RESET operations at a curvature radius smaller than 8.0 mm, the IGZO RCM devices showed sound RS behaviors even at a curvature radius of 4.5 mm. Third, for the IGZO RCM devices with the cell size bigger than 100 × 100 μm2, the RESET operation could not be performed at a curvature radius smaller than 6.5 mm. Thus, it was elucidated that the RS characteristics of the flexible RCM devices using oxide semiconductor thin films were closely related to the types of RS materials and the cell size of the device.

High-Performance Sensors Based on Resistance Fluctuations of Single-Layer-Graphene Transistors.

PubMed

Amin, Kazi Rafsanjani; Bid, Aveek

2015-09-09

One of the most interesting predicted applications of graphene-monolayer-based devices is as high-quality sensors. In this article, we show, through systematic experiments, a chemical vapor sensor based on the measurement of low-frequency resistance fluctuations of single-layer-graphene field-effect-transistor devices. The sensor has extremely high sensitivity, very high specificity, high fidelity, and fast response times. The performance of the device using this scheme of measurement (which uses resistance fluctuations as the detection parameter) is more than 2 orders of magnitude better than a detection scheme in which changes in the average value of the resistance is monitored. We propose a number-density-fluctuation-based model to explain the superior characteristics of a noise-measurement-based detection scheme presented in this article.

Development and fabrication of improved power transistor switches

NASA Technical Reports Server (NTRS)

Hower, P. L.; Chu, C. K.

1979-01-01

A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed.

Input Device Characteristics Contribute to Performance during Training to Operate a Simulated Micro-Unmanned Aerial Vehicle

DTIC Science & Technology

2010-10-01

mission, participants were given the NASA Task Load Index ( NASA TLX ) to measure subjective workload. Additional performance measures included mission...16 NASA TLX Workload Analyses...worksheet (See Appendix C), the Hidden Patterns Test (ETS, 1976), and an electronic form of the NASA Task Load Index ( TLX ; Hart & Staveland, 1988). The

CMOS compatible electrode materials selection in oxide-based memory devices

NASA Astrophysics Data System (ADS)

Zhuo, V. Y.-Q.; Li, M.; Guo, Y.; Wang, W.; Yang, Y.; Jiang, Y.; Robertson, J.

2016-07-01

Electrode materials selection guidelines for oxide-based memory devices are constructed from the combined knowledge of observed device operation characteristics, ab-initio calculations, and nano-material characterization. It is demonstrated that changing the top electrode material from Ge to Cr to Ta in the Ta2O5-based memory devices resulted in a reduction of the operation voltages and current. Energy Dispersed X-ray (EDX) Spectrometer analysis clearly shows that the different top electrode materials scavenge oxygen ions from the Ta2O5 memory layer at various degrees, leading to different oxygen vacancy concentrations within the Ta2O5, thus the observed trends in the device performance. Replacing the Pt bottom electrode material with CMOS compatible materials (Ru and Ir) further reduces the power consumption and can be attributed to the modification of the Schottky barrier height and oxygen vacancy concentration at the electrode/oxide interface. Both trends in the device performance and EDX results are corroborated by the ab-initio calculations which reveal that the electrode material tunes the oxygen vacancy concentration via the oxygen chemical potential and defect formation energy. This experimental-theoretical approach strongly suggests that the proper selection of CMOS compatible electrode materials will create the critical oxygen vacancy concentration to attain low power memory performance.

Self-Consistent Monte Carlo Study of the Coulomb Interaction under Nano-Scale Device Structures

NASA Astrophysics Data System (ADS)

Sano, Nobuyuki

2011-03-01

It has been pointed that the Coulomb interaction between the electrons is expected to be of crucial importance to predict reliable device characteristics. In particular, the device performance is greatly degraded due to the plasmon excitation represented by dynamical potential fluctuations in high-doped source and drain regions by the channel electrons. We employ the self-consistent 3D Monte Carlo (MC) simulations, which could reproduce both the correct mobility under various electron concentrations and the collective plasma waves, to study the physical impact of dynamical potential fluctuations on device performance under the Double-gate MOSFETs. The average force experienced by an electron due to the Coulomb interaction inside the device is evaluated by performing the self-consistent MC simulations and the fixed-potential MC simulations without the Coulomb interaction. Also, the band-tailing associated with the local potential fluctuations in high-doped source region is quantitatively evaluated and it is found that the band-tailing becomes strongly dependent of position in real space even inside the uniform source region. This work was partially supported by Grants-in-Aid for Scientific Research B (No. 2160160) from the Ministry of Education, Culture, Sports, Science and Technology in Japan.

Performance analysis of resistive switching devices based on BaTiO3 thin films

NASA Astrophysics Data System (ADS)

Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

2016-03-01

Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

Layout optimization of GGISCR structure for on-chip system level ESD protection applications

NASA Astrophysics Data System (ADS)

Zeng, Jie; Dong, Shurong; Wong, Hei; Hu, Tao; Li, Xiang

2016-12-01

To improve the holding voltage, area efficiency and robustness, a comparative study on single finger, 4-finger and round shape layout of gate-grounded-nMOS incorporated SCR (GGISCR) devices are conducted. The devices were fabricated with a commercial 0.35 μm HV-CMOS process without any additional mask or process modification. To have a fair comparison, we develop a new Figure-of-Merit (FOM) modeling for the performance evaluation of these devices. We found that the ring type device which has an It2 value of 18.9 A is area efficient and has smaller effective capacitance. The different characteristics were explained with the different effective ESD currents in these layout structures.

Wide-Bandgap Semiconductor Devices for Automotive Applications

NASA Astrophysics Data System (ADS)

Sugimoto, M.; Ueda, H.; Uesugi, T.; Kachi, T.

2007-06-01

In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

Testing methodologies and systems for semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Wieckowski, Michael

Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable of ascertaining SOA performance based solely on the subthreshold differential resistance signature, and are a first step toward the inevitable integration of self-testing circuits into complex optoelectronic systems.

Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells

PubMed Central

Ray, Biswajit; Baradwaj, Aditya G.; Khan, Mohammad Ryyan; Boudouris, Bryan W.; Alam, Muhammad Ashraful

2015-01-01

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. Here we show that the short-circuit current density from SS-OPV devices can be enhanced significantly (∼100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: (i) detailed numerical simulations, (ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and (iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. These insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials. PMID:26290582

Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells.

PubMed

Ray, Biswajit; Baradwaj, Aditya G; Khan, Mohammad Ryyan; Boudouris, Bryan W; Alam, Muhammad Ashraful

2015-09-08

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. Here we show that the short-circuit current density from SS-OPV devices can be enhanced significantly (∼100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: (i) detailed numerical simulations, (ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and (iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. These insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials.

A laser desorption ionization/matrix-assisted laser desorption ionization target system applicable for three distinct types of instruments (LinTOF/curved field RTOF, LinTOF/RTOF and QqRTOF) with different performance characteristics from three vendors.

PubMed

Rados, Edita; Pittenauer, Ernst; Frank, Johannes; Varmuza, Kurt; Allmaier, Günter

2018-04-30

We have developed a target system which enables the use of only one target (i.e. target preparation set) for three different laser desorption ionization (LDI)/matrix-assisted laser desorption ionization (MALDI) mass spectrometric instruments. The focus was on analysing small biomolecules with LDI for future use of the system for the study of meteorite samples (carbonaceous chondrites) using devices with different mass spectrometric performance characteristics. Three compounds were selected due to their potential presence in meteoritic chondrites: tryptophan, 2-deoxy-d-ribose and triphenylene. They were prepared (with and without MALDI matrix, i.e. MALDI and LDI) and analysed with three different mass spectrometers (LinTOF/curved field RTOF, LinTOF/RTOF and QqRTOF). The ion sources of two of the instruments were run at high vacuum, and one at intermediate pressure. Two devices used a laser wavelength of 355 nm and one a wavelength of 337 nm. The developed target system operated smoothly with all devices. Tryptophan, 2-deoxy-d-ribose and triphenylene showed similar desorption/ionization behaviour for all instruments using the LDI mode. Interestingly, protonated tryptophan could be observed only with the LinTOF/curved field RTOF device in LDI and MALDI mode, while sodiated molecules were observed with all three instruments (in both ion modes). Deprotonated tryptophan was almost completely obscured by matrix ions in the MALDI mode whereas LDI yielded abundant deprotonated molecules. The presented target system allowed successful analyses of the three compounds using instruments from different vendors with only one preparation showing different analyser performance characteristics. The elemental composition with the QqRTOF analyser and the high-energy 20 keV collision-induced dissociation fragmentation will be important in identifying unknown compounds in chondrites. © 2018 The Authors. Rapid Communications in Mass Spectrometry Published by John Wiley & Sons Ltd.

The Application of a Cylindrical-spherical Floating Ring Bearing as a Device to Control Stability of Turbogenerators

NASA Technical Reports Server (NTRS)

Leung, P. S.; Craighead, I. A.; Wilkinson, T. S.

1991-01-01

The development of a new device to control stability of turbogenerators is described. The device comprises a floating ring installed between the journal and bearing housing of a fluid film bearing. The journal and the inner surface of the ring are cylindrical while the outer surface of the ring and bearing surface are spherical providing axial location of the ring and self-alignment of the bearing. The employment of this device would lead to a consistent machine performance. System stability may be controlled by changing a number of bearing and floating ring parameters. This device also offers an additional advantage of having a very low frictional characteristic. A feasibility study was carried out to investigate the suitability of the new device to turbogenerator applications. Both theoretical analysis and experimental observations were carried out. Initial results suggest that the new floating ring device is a competitive alternative to other conventional arrangements.

Prosthetic Device Infections.

PubMed

Martinez, Raquel M; Bowen, Thomas R; Foltzer, Michael A

2016-08-01

The immunocompromised host is a particularly vulnerable population in whom routine and unusual infections can easily and frequently occur. Prosthetic devices are commonly used in these patients and the infections associated with those devices present a number of challenges for both the microbiologist and the clinician. Biofilms play a major role in device-related infections, which may contribute to failed attempts to recover organisms from routine culture methods. Moreover, device-related microorganisms can be difficult to eradicate by antibiotic therapy alone. Changes in clinical practice and advances in laboratory diagnostics have provided significant improvements in the detection and accurate diagnosis of device-related infections. Disruption of the bacterial biofilm plays an essential role in recovering the causative agent in culture. Various culture and nucleic acid amplification techniques are more accurate to guide directed treatment regimens. This chapter reviews the performance characteristics of currently available diagnostic assays and summarizes published guidelines, where available, for addressing suspected infected prosthetic devices.

Device and circuit analysis of a sub 20 nm double gate MOSFET with gate stack using a look-up-table-based approach

NASA Astrophysics Data System (ADS)

Chakraborty, S.; Dasgupta, A.; Das, R.; Kar, M.; Kundu, A.; Sarkar, C. K.

2017-12-01

In this paper, we explore the possibility of mapping devices designed in TCAD environment to its modeled version developed in cadence virtuoso environment using a look-up table (LUT) approach. Circuit simulation of newly designed devices in TCAD environment is a very slow and tedious process involving complex scripting. Hence, the LUT based modeling approach has been proposed as a faster and easier alternative in cadence environment. The LUTs are prepared by extracting data from the device characteristics obtained from device simulation in TCAD. A comparative study is shown between the TCAD simulation and the LUT-based alternative to showcase the accuracy of modeled devices. Finally the look-up table approach is used to evaluate the performance of circuits implemented using 14 nm nMOSFET.

Projected phase-change memory devices.

PubMed

Koelmans, Wabe W; Sebastian, Abu; Jonnalagadda, Vara Prasad; Krebs, Daniel; Dellmann, Laurent; Eleftheriou, Evangelos

2015-09-03

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states.

Fabrication and electrical characterization of planar lighting devices with Cs3Sb photocathode emitters

NASA Astrophysics Data System (ADS)

Jeong, Hyo-Soo; Keller, Kris; Culkin, Brad

2017-03-01

Non-vacuum process technology was used to produce Cs3Sb photocathodes on substrates, and in-situ panel devices were fabricated. The performance of the devices was characterized by measuring the anode current as functions of the devices' operation times. An excitation light source with a 475-nm wavelength was used for the photocathodes. The device has a simple diode structure, providing unique characteristics such as a large gap, vertical electron beam directionality, and resistance to surface contamination from ion bombardment and poisoning by outgassing species. Accordingly, Cs3Sb photocathodes function as flat emitters, and the emission properties of the photocathode emitters depend on the vacuum level of the devices. An improved current stability has been observed after conducting an electrical conditioning process to remove possible adsorbates on the Cs3Sb flat emitters.

Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (Nd2O3) bilayer gate dielectrics

NASA Astrophysics Data System (ADS)

Khound, Sagarika; Sarma, Ranjit

2018-01-01

We have reported here on the design, processing and dielectric properties of pentacene-based organic thin film transitors (OTFTs) with a bilayer gate dilectrics of crosslinked PVA/Nd2O3 which enables low-voltage organic thin film operations. The dielectric characteristics of PVA/Nd2O3 bilayer films are studied by capacitance-voltage ( C- V) and current-voltage ( I- V) curves in the metal-insulator-metal (MIM) structure. We have analysed the output electrical responses and transfer characteristics of the OTFT devices to determine their performance of OTFT parameters. The mobility of 0.94 cm2/Vs, the threshold voltage of - 2.8 V, the current on-off ratio of 6.2 × 105, the subthreshold slope of 0.61 V/decade are evaluated. Low leakage current of the device is observed from current density-electric field ( J- E) curve. The structure and the morphology of the device are studied using X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. The study demonstrates an effective way to realize low-voltage, high-performance OTFTs at low cost.

Modulation of the operational characteristics of amorphous In-Ga-Zn-O thin-film transistors by In2O3 nanoparticles

NASA Astrophysics Data System (ADS)

Lee, Min-Jung; Lee, Tae Il; Park, Jee Ho; Kim, Jung Han; Chae, Gee Sung; Jun, Myung Chul; Hwang, Yong Kee; Baik, Hong Koo; Lee, Woong; Myoung, Jae-Min

2012-05-01

The structure of thin-film transistors (TFTs) based on amorphous In-Ga-Zn-O (a-IGZO) was modified by spin coating a suspension of In2O3 nanoparticles on a SiO2/p++ Si layered wafer surface prior to the deposition of IGZO layer by room-temperature sputtering. The number of particles per unit area (surface density) of the In2O3 nanoparticles could be controlled by applying multiple spin coatings of the nanoparticle suspension. During the deposition of IGZO, the In2O3 nanoparticles initially located on the substrate surface migrated to the top of the IGZO layer indicating that they were not embedded within the IGZO layer, but they supplied In to the IGZO layer to increase the In concentration in the channel layer. As a result, the channel characteristics of the a-IGZO TFT were modulated so that the device showed an enhanced performance as compared with the reference device prepared without the nanoparticle treatment. Such an improved device performance is attributed to the nano-scale changes in the structure of (InO)n ordering assisted by increased In concentration in the amorphous channel layer.

Single-photon semiconductor photodiodes for distributed optical fiber sensors: state of the art and perspectives

NASA Astrophysics Data System (ADS)

Ripamonti, Giancarlo; Lacaita, Andrea L.

1993-03-01

The extreme sensitivity and time resolution of Geiger-mode avalanche photodiodes (GM- APDs) have already been exploited for optical time domain reflectometry (OTDR). Better than 1 cm spatial resolution in Rayleigh scattering detection was demonstrated. Distributed and quasi-distributed optical fiber sensors can take advantage of the capabilities of GM-APDs. Extensive studies have recently disclosed the main characteristics and limitations of silicon devices, both commercially available and developmental. In this paper we report an analysis of the performance of these detectors. The main characteristics of GM-APDs of interest for distributed optical fiber sensors are briefly reviewed. Command electronics (active quenching) is then introduced. The detector timing performance sets the maximum spatial resolution in experiments employing OTDR techniques. We highlight that the achievable time resolution depends on the physics of the avalanche spreading over the device area. On the basis of these results, trade-off between the important parameters (quantum efficiency, time resolution, background noise, and afterpulsing effects) is considered. Finally, we show first results on Germanium devices, capable of single photon sensitivity at 1.3 and 1.5 micrometers with sub- nanosecond time resolution.

High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

PubMed

Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

2018-06-12

Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

Two-Dimensional Atomic-Layered Alloy Junctions for High-Performance Wearable Chemical Sensor.

PubMed

Cho, Byungjin; Kim, Ah Ra; Kim, Dong Jae; Chung, Hee-Suk; Choi, Sun Young; Kwon, Jung-Dae; Park, Sang Won; Kim, Yonghun; Lee, Byoung Hun; Lee, Kyu Hwan; Kim, Dong-Ho; Nam, Jaewook; Hahm, Myung Gwan

2016-08-03

We first report that two-dimensional (2D) metal (NbSe2)-semiconductor (WSe2)-based flexible, wearable, and launderable gas sensors can be prepared through simple one-step chemical vapor deposition of prepatterned WO3 and Nb2O5. Compared to a control device with a Au/WSe2 junction, gas-sensing performance of the 2D NbSe2/WSe2 device was significantly enhanced, which might have resulted from the formation of a NbxW1-xSe2 transition alloy junction lowering the Schottky barrier height. This would make it easier to collect charges of channels induced by molecule adsorption, improving gas response characteristics toward chemical species including NO2 and NH3. 2D NbSe2/WSe2 devices on a flexible substrate provide gas-sensing properties with excellent durability under harsh bending. Furthermore, the device stitched on a T-shirt still performed well even after conventional cleaning with a laundry machine, enabling wearable and launderable chemical sensors. These results could pave a road toward futuristic gas-sensing platforms based on only 2D materials.

Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance

DOEpatents

Zolper, John C.; Sherwin, Marc E.; Baca, Albert G.

2000-01-01

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

Performance Evaluation of Bluetooth Low Energy: A Systematic Review.

PubMed

Tosi, Jacopo; Taffoni, Fabrizio; Santacatterina, Marco; Sannino, Roberto; Formica, Domenico

2017-12-13

Small, compact and embedded sensors are a pervasive technology in everyday life for a wide number of applications (e.g., wearable devices, domotics, e-health systems, etc.). In this context, wireless transmission plays a key role, and among available solutions, Bluetooth Low Energy (BLE) is gaining more and more popularity. BLE merges together good performance, low-energy consumption and widespread diffusion. The aim of this work is to review the main methodologies adopted to investigate BLE performance. The first part of this review is an in-depth description of the protocol, highlighting the main characteristics and implementation details. The second part reviews the state of the art on BLE characteristics and performance. In particular, we analyze throughput, maximum number of connectable sensors, power consumption, latency and maximum reachable range, with the aim to identify what are the current limits of BLE technology. The main results can be resumed as follows: throughput may theoretically reach the limit of ~230 kbps, but actual applications analyzed in this review show throughputs limited to ~100 kbps; the maximum reachable range is strictly dependent on the radio power, and it goes up to a few tens of meters; the maximum number of nodes in the network depends on connection parameters, on the network architecture and specific device characteristics, but it is usually lower than 10; power consumption and latency are largely modeled and analyzed and are strictly dependent on a huge number of parameters. Most of these characteristics are based on analytical models, but there is a need for rigorous experimental evaluations to understand the actual limits.

Performance Evaluation of Bluetooth Low Energy: A Systematic Review

PubMed Central

Taffoni, Fabrizio; Santacatterina, Marco; Sannino, Roberto

2017-01-01

Small, compact and embedded sensors are a pervasive technology in everyday life for a wide number of applications (e.g., wearable devices, domotics, e-health systems, etc.). In this context, wireless transmission plays a key role, and among available solutions, Bluetooth Low Energy (BLE) is gaining more and more popularity. BLE merges together good performance, low-energy consumption and widespread diffusion. The aim of this work is to review the main methodologies adopted to investigate BLE performance. The first part of this review is an in-depth description of the protocol, highlighting the main characteristics and implementation details. The second part reviews the state of the art on BLE characteristics and performance. In particular, we analyze throughput, maximum number of connectable sensors, power consumption, latency and maximum reachable range, with the aim to identify what are the current limits of BLE technology. The main results can be resumed as follows: throughput may theoretically reach the limit of ~230 kbps, but actual applications analyzed in this review show throughputs limited to ~100 kbps; the maximum reachable range is strictly dependent on the radio power, and it goes up to a few tens of meters; the maximum number of nodes in the network depends on connection parameters, on the network architecture and specific device characteristics, but it is usually lower than 10; power consumption and latency are largely modeled and analyzed and are strictly dependent on a huge number of parameters. Most of these characteristics are based on analytical models, but there is a need for rigorous experimental evaluations to understand the actual limits. PMID:29236085

Precision of Four Acoustic Bone Measurement Devices

NASA Technical Reports Server (NTRS)

Miller, Christopher; Feiveson, Alan H.; Shackelford, Linda; Rianon, Nahida; LeBlanc, Adrian

2000-01-01

Though many studies have quantified the precision of various acoustic bone measurement devices, it is difficult to directly compare the results among the studies, because they used disparate subject pools, did not specify the estimation methodology, or did not use consistent definitions for various precision characteristics. In this study, we used a repeated measures design protocol to directly determine the precision characteristics of four acoustic bone measurement devices: the Mechanical Response Tissue Analyzer (MRTA), the UBA-575+, the SoundScan 2000 (S2000), and the Sahara Ultrasound Done Analyzer. Ten men and ten women were scanned on all four devices by two different operators at five discrete time points: Week 1, Week 2, Week 3, Month 3 and Month 6. The percent coefficient of variation (%CV) and standardized coefficient of variation were computed for the following precision characteristics: interoperator effect, operator-subject interaction, short-term error variance, and long-term drift, The MRTA had high interoperator errors for its ulnar and tibial stiffness measures and a large long-term drift in its tibial stiffness measurement. The UBA-575+ exhibited large short-term error variances and long-term drift for all three of its measurements. The S2000's tibial speed of sound measurement showed a high short-term error variance and a significant operator-subject interaction but very good values ( < 1%) for the other precision characteristics. The Sahara seemed to have the best overall performance, but was hampered by a large %CV for short-term error variance in its broadband ultrasound attenuation measure.

Precision of Four Acoustic Bone Measurement Devices

NASA Technical Reports Server (NTRS)

Miller, Christopher; Rianon, Nahid; Feiveson, Alan; Shackelford, Linda; LeBlanc, Adrian

2000-01-01

Though many studies have quantified the precision of various acoustic bone measurement devices, it is difficult to directly compare the results among the studies, because they used disparate subject pools, did not specify the estimation methodology, or did not use consistent definitions for various precision characteristics. In this study, we used a repeated measures design protocol to directly determine the precision characteristics of four acoustic bone measurement devices: the Mechanical Response Tissue Analyzer (MRTA), the UBA-575+, the SoundScan 2000 (S2000), and the Sahara Ultrasound Bone Analyzer. Ten men and ten women were scanned on all four devices by two different operators at five discrete time points: Week 1, Week 2, Week 3, Month 3 and Month 6. The percent coefficient of variation (%CV) and standardized coefficient of variation were computed for the following precision characteristics: interoperator effect, operator-subject interaction, short-term error variance, and long-term drift. The MRTA had high interoperator errors for its ulnar and tibial stiffness measures and a large long-term drift in its tibial stiffness measurement. The UBA-575+ exhibited large short-term error variances and long-term drift for all three of its measurements. The S2000's tibial speed of sound measurement showed a high short-term error variance and a significant operator-subject interaction but very good values (less than 1%) for the other precision characteristics. The Sahara seemed to have the best overall performance, but was hampered by a large %CV for short-term error variance in its broadband ultrasound attenuation measure.

Energy transport in cooling device by magnetic fluid

NASA Astrophysics Data System (ADS)

Yamaguchi, Hiroshi; Iwamoto, Yuhiro

2017-06-01

Temperature sensitive magnetic fluid has a great potential with high performance heat transport ability as well as long distance energy (heat) transporting. In the present study experimental set-up was newly designed and constructed in order to measure basic heat transport characteristics under various magnetic field conditions. Angular dependence for the device (heat transfer section) was also taken into consideration for a sake of practical applications. The energy transfer characteristic (heat transport capability) in the magnetically-driven heat transport (cooling) device using the binary TSMF was fully investigated with the set-up. The obtained results indicate that boiling of the organic mixture (before the magnetic fluid itself reaching boiling point) effectively enhances the heat transfer as well as boosting the flow to circulate in the closed loop by itself. A long-distance heat transport of 5 m is experimentally confirmed, transferring the thermal energy of 35.8 W, even when the device (circulation loop) is horizontally placed. The highlighted results reveal that the proposed cooling device is innovative in a sense of transporting substantial amount of thermal energy (heat) as well as a long distance heat transport. The development of the magnetically-driven heat transport device has a great potential to be replaced for the conventional heat pipe in application of thermal engineering.

Flexible Memristive Devices Based on InP/ZnSe/ZnS Core-Multishell Quantum Dot Nanocomposites.

PubMed

Kim, Do Hyeong; Wu, Chaoxing; Park, Dong Hyun; Kim, Woo Kyum; Seo, Hae Woon; Kim, Sang Wook; Kim, Tae Whan

2018-05-02

The effects of the ZnS shell layer on the memory performances of flexible memristive devices based on quantum dots (QDs) with an InP/ZnSe/ZnS core-multishell structure embedded in a poly(methylmethacrylate) layer were investigated. The on/off ratios of the devices based on QDs with an InP/ZnSe core-shell structure and with an InP/ZnSe/ZnS core-multishell structure were approximately 4.2 × 10 2 and 8.5 × 10 3 , respectively, indicative of enhanced charge storage capability in the latter. After bending, the memory characteristics of the memristive devices based on QDs with the InP/ZnSe/ZnS structure were similar to those before bending. In addition, those devices maintained the same on/off ratios for retention time of 1 × 10 4 s, and the number of endurance cycles was above 1 × 10 2 . The reset voltages ranged from -2.3 to -3.1 V, and the set voltages ranged from 1.3 to 2.1 V, indicative of reliable electrical characteristics. Furthermore, the possible operating mechanisms of the devices are presented on the basis of the electron trapping and release mode.

Accurate reconstruction of the jV-characteristic of organic solar cells from measurements of the external quantum efficiency

NASA Astrophysics Data System (ADS)

Meyer, Toni; Körner, Christian; Vandewal, Koen; Leo, Karl

2018-04-01

In two terminal tandem solar cells, the current density - voltage (jV) characteristic of the individual subcells is typically not directly measurable, but often required for a rigorous device characterization. In this work, we reconstruct the jV-characteristic of organic solar cells from measurements of the external quantum efficiency under applied bias voltages and illumination. We show that it is necessary to perform a bias irradiance variation at each voltage and subsequently conduct a mathematical correction of the differential to the absolute external quantum efficiency to obtain an accurate jV-characteristic. Furthermore, we show that measuring the external quantum efficiency as a function of voltage for a single bias irradiance of 0.36 AM1.5g equivalent sun provides a good approximation of the photocurrent density over voltage curve. The method is tested on a selection of efficient, common single-junctions. The obtained conclusions can easily be transferred to multi-junction devices with serially connected subcells.

Wet-chemical fabrication of a single leakage-channel grating coupler

NASA Astrophysics Data System (ADS)

Weisenbach, Lori; Zelinski, Brian J. J.; Roncone, Ronald L.; Burke, James J.

1995-04-01

We demonstrate the fabrication of a unique optical device, the single leakage-channel grating coupler, using sol-gel techniques. Design specifications are outlined to establish the material criteria for the sol-gel compositions. Material choice and preparation are described. We evaluate the characteristics and performance of the single leakage-channel grating coupler by comparing the predicted and the measured branching ratios. The branching ratio of the solution-derived device is within 3% of the theoretically predicted value.

High-response hybrid quantum dots- 2D conductor phototransistors: recent progress and perspectives

NASA Astrophysics Data System (ADS)

Sablon, Kimberly A.; Sergeev, Andrei; Najmaei, Sina; Dubey, Madan

2017-03-01

Having been inspired by the tremendous progress in material nanoscience and device nanoengineering, hybrid phototransistors combine solution processed colloidal semiconductor quantum dots (QDs) with graphene or two-dimensional (2D) semiconductor materials. Novel detectors demonstrate ultrahigh photoconductive gain, high and selective photoresponse, low noise, and very high responsivity in visible- and near-infrared ranges. The outstanding performance of phototransistors is primarily due to the strong, selective, and size tunable absorption of QDs and fast charge transfer in 2D high mobility conductors. However, the relatively small mobility of QD nanomaterials was a technological barrier, which limited the operating rate of devices. Very recent innovations in detector design and significant progress in QD ligand engineering provide effective tools for further qualitative improvements. This article reviews the recent progress in material science, nanophysics, and device engineering related to hybrid phototransistors. Detectors based on various QD nanomaterials and several 2D conductors are compared, and advantages and disadvantages of various nanomaterials for applications in hybrid phototransistors are identified. We also benchmark the experimental characteristics with model results that establish interrelations and tradeoffs between detector characteristics, such as responsivity, dark and noise currents, the photocarrier lifetime, response, and noise bandwidths. We have shown that the most recent phototransistors demonstrate performance limited by the fundamental generation recombination noise in high gain devices. Interrelation between the dynamic range of the detector and the detector sensitivity is discussed. The review is concluded with a brief discussion of the remaining challenges and possible significant improvements in the performance of hybrid phototransistors.

Histopomorphic Evaluation of Radiofrequency Mediated Débridement Chondroplasty

PubMed Central

Ganguly, Kumkum; McRury, Ian D; Goodwin, Peter M; Morgan, Roy E; Augé II, Wayne K

2010-01-01

The use of radiofrequency devices has become widespread for surgical ablation procedures. When ablation devices have been deployed in treatment settings requiring tissue preservation like débridement chondroplasty, adoption has been limited due to the collateral damage caused by these devices in healthy tissue surrounding the treatment site. Ex vivo radiofrequency mediated débridement chondroplasty was performed on osteochondral specimens demonstrating surface fibrillation obtained from patients undergoing knee total joint replacement. Three radiofrequency systems designed to perform débridement chondroplasty were tested each demonstrating different energy delivery methods: monopolar ablation, bipolar ablation, and non-ablation energy. Treatment outcomes were compared with control specimens as to clinical endpoint and histopomorphic characteristics. Fibrillated cartilage was removed in all specimens; however, the residual tissue remaining at the treatment site displayed significantly different characteristics attributable to radiofrequency energy delivery method. Systems that delivered ablation-based energies caused tissue necrosis and collateral damage at the treatment site including corruption of cartilage Superficial and Transitional Zones; whereas, the non-ablation system created a smooth articular surface with Superficial Zone maintenance and without chondrocyte death or tissue necrosis. The mechanism of radiofrequency energy deposition upon tissues is particularly important in treatment settings requiring tissue preservation. Ablation-based device systems can cause a worsened state of articular cartilage from that of pre-treatment. Non-ablation energy can be successful in modifying/preconditioning tissue during débridement chondroplasty without causing collateral damage. Utilizing a non-ablation radiofrequency system provides the ability to perform successful débridement chondroplasty without causing additional articular cartilage tissue damage and may allow for other cartilage intervention success. PMID:20721322

Effects of Lightning Injection on Power-MOSFETs

NASA Technical Reports Server (NTRS)

Celaya, Jose; Saha, Sankalita; Wysocki, Phil; Ely, Jay; Nguyen, Truong; Szatkowski, George; Koppen, Sandra; Mielnik, John; Vaughan, Roger; Goebel, Kai

2009-01-01

Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pin-injecting lightning waveforms into the gate, drain and/or source of MOSFET devices while they were in the OFF-state. Analysis of the characteristic curves of the devices showed that for certain injection modes the devices can accumulate considerable damage rendering them inoperable. Early results demonstrate that a power MOSFET, even in its off-state, can incur considerable damage due to lightning pin injection, leading to significant deviation in its behavior and performance, and to possibly early device failures.

DC and analog/RF performance optimisation of source pocket dual work function TFET

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Sharma, Dheeraj; Kondekar, Pravin; Nigam, Kaushal; Baronia, Sagar

2017-12-01

We investigate a systematic study of source pocket tunnel field-effect transistor (SP TFET) with dual work function of single gate material by using uniform and Gaussian doping profile in the drain region for ultra-low power high frequency high speed applications. For this, a n+ doped region is created near the source/channel junction to decrease the depletion width results in improvement of ON-state current. However, the dual work function of the double gate is used for enhancement of the device performance in terms of DC and analog/RF parameters. Further, to improve the high frequency performance of the device, Gaussian doping profile is considered in the drain region with different characteristic lengths which decreases the gate to drain capacitance and leads to drastic improvement in analog/RF figures of merit. Furthermore, the optimisation is performed with different concentrations for uniform and Gaussian drain doping profile and for various sectional length of lower work function of the gate electrode. Finally, the effect of temperature variation on the device performance is demonstrated.

Network analysis of semiconducting Zn1-xCdxS based photosensitive device using impedance spectroscopy and current-voltage measurement

NASA Astrophysics Data System (ADS)

Datta, Joydeep; Das, Mrinmay; Dey, Arka; Halder, Soumi; Sil, Sayantan; Ray, Partha Pratim

2017-10-01

ZnCdS is an intermediate ternary alloy type semiconducting material which has huge tunable structural, optical and electrical properties. Here, we have synthesized Zn1-xCdxS compound and characterized its structural, optical and charge transport properties. It is seen that the particle size is greatly influenced by the amount of alloy concentration of cadmium. The performance of semiconductor device such as Schottky diode depends mainly on the charge transportation through the metal-semiconductor junction. So, we have fabricated Al/Zn1-xCdxS/ITO device and investigated the bias dependent impedance properties through equivalent circuit network analysis to study the electron lifetime and interfacial region resistance. The result of network analysis indicates that the charge transportation through Al- Zn0.6Cd0.4S is better than the other fabricated devices. For further explanation, we have studied the capacitance-voltage (C-V) characteristic under dark and current-voltage (I-V) characteristic under dark and light. We have investigated barrier height, depletion layer width and employed SCLC (space charge limited current) theory in I-V characteristics to determine mobility, transit time and diffusion length. The mobility and diffusion length for Zn0.6Cd0.4S fabricated device are derived as 23.01 m2 V-1 s-1 and 4.4 μm respectively while both the values are less for the other devices. These values are enhanced upon illumination for all the devices but superiority comes from the Al/Zn0.6Cd0.4S/ITO device and it leads us to measure the photosensitivity, responsivity, specific detectivity. As expected, the photosensing parameters are enhanced for the Zn0.6Cd0.4S fabricated device. So, this literature not only explores the metal semiconductor charge transportation using impedance spectroscopy (IS) network analysis and SCLC theory but also explain it from the structural point of view.

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

NASA Technical Reports Server (NTRS)

Neudeck, P. G.; Huang, W.; Dudley, M.

1998-01-01

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Home oxygen therapy: re-thinking the role of devices.

PubMed

Melani, Andrea S; Sestini, Piersante; Rottoli, Paola

2018-03-01

A range of devices are available for delivering and monitoring home oxygen therapy (HOT). Guidelines do not give indications for the choice of the delivery device but recommend the use of an ambulatory system in subjects on HOT whilst walking. Areas covered: We provide a clinical overview of HOT and review traditional and newer delivery and monitoring devices for HOT. Despite relevant technology advancements, clinicians, faced with many challenges when they prescribe oxygen therapy, often remain familiar to traditional devices and continuous flow delivery of oxygen. Some self-filling delivery-less devices could increase the users' level of independence with ecological advantage and, perhaps, reduced cost. Some newer portable oxygen concentrators are being available, but more work is needed to understand their performances in different diseases and clinical settings. Pulse oximetry has gained large diffusion worldwide and some models permit long-term monitoring. Some closed-loop portable monitoring devices are also able to adjust oxygen flow automatically in accordance with the different needs of everyday life. This might help to improve adherence and the practice of proper oxygen titration that has often been omitted because difficult to perform and time-consuming. Expert commentary: The prescribing physicians should know the characteristics of newer devices and use technological advancements to improve the practice of HOT.

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics

NASA Astrophysics Data System (ADS)

Sangwan, Vinod K.; Jariwala, Deep; Everaerts, Ken; McMorrow, Julian J.; He, Jianting; Grayson, Matthew; Lauhon, Lincoln J.; Marks, Tobin J.; Hersam, Mark C.

2014-02-01

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure < 2 × 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

NASA Astrophysics Data System (ADS)

Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

2016-09-01

In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

A hybrid ferroelectric-flash memory cells

NASA Astrophysics Data System (ADS)

Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

2014-09-01

A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

Clinical characteristic and intraoperative findings of uterine perforation patients in using of intrauterine devices (IUDs).

PubMed

Sun, Xin; Xue, Min; Deng, Xinliang; Lin, Yun; Tan, Ying; Wei, Xueli

2018-01-01

Intrauterine devices (IUDs) are the most popular form of contraception used worldwide; however, IUD is not risk-free. IUD migrations, especially uterine perforations, were frequently occurred in patients. The aim of this study was to investigate the clinical characteristics and intraoperative findings in patients with migrated IUDs. 29 cases of uterine perforation associated with migrated IUDs and 69 control patients were followed between January 2008 to March 2015. Patients who used IUDs within first 6 months from the last delivery experienced a characteristically high rate of the perforation of the uterine wall. A significantly larger number of IUD insertion associated with uterine perforation were performed in rural hospitals or operated at a lower level health care system. There was no clear difference in the age and presented symptoms in patients between two groups. Majority of contraceptive intrauterine devices was the copper-releasing IUDs. Furthermore, patients who used V-shaped IUD showed significantly higher incidence of pelvic adhesions when compared with the users of O-shaped IUDs. Unique clinical characteristics of IUD migration were identified in patients with uterine perforation. Hysteroscopy and/or laparoscopy were the effective approaches to remove the migrated IUDs. Improving operating skills is required at the lower level of health care system.

Physical Characteristics of Medical Textile Prostheses Designed for Hernia Repair: A Comprehensive Analysis of Select Commercial Devices

PubMed Central

Miao, Linli; Wang, Fang; Wang, Lu; Zou, Ting; Brochu, Gaétan; Guidoin, Robert

2015-01-01

Inguinal hernia repairs are among the most frequent operations performed worldwide. This study aims to provide further understanding of structural characteristics of hernia prostheses, and better comprehensive evaluation. Weight, porosity, pore size and other physical characteristics were evaluated; warp knitting structures were thoroughly discussed. Two methods referring to ISO 7198:1998, i.e., weight method and area method, were employed to calculate porosity. Porosity ranged from 37.3% to 69.7% measured by the area method, and 81.1% to 89.6% by the weight method. Devices with two-guide bar structures displayed both higher porosity (57.7%–69.7%) and effective porosity (30.8%–60.1%) than single-guide bar structure (37.3%–62.4% and 0%–5.9%, respectively). Filament diameter, stitch density and loop structure combined determined the thickness, weight and characteristics of pores. They must be well designed to avoid zero effective porosity regarding a single-bar structure. The area method was more effective in characterizing flat sheet meshes while the weight method was perhaps more accurate in describing stereoscopic void space for 3D structure devices. This article will give instructive clues for engineers to improve mesh structures, and better understanding of warp knitting meshes for surgeons. PMID:28793704

Gate-tunable transport characteristics of Bi2S3 nanowire transistors

NASA Astrophysics Data System (ADS)

Kilcoyne, Colin; Ali, Ahmed H.; Alsaqqa, Ali M.; Rahman, Ajara A.; Whittaker-Brooks, Luisa; Sambandamurthy, Ganapathy

2018-02-01

Electrical transport and resistance noise spectroscopy measurements are performed on individual, single crystalline Bi2S3 nanowires in the field-effect geometry. The nanowires exhibit n-type conduction and device characteristics such as activation energy, ON/OFF ratio, and mobility are calculated over a temperature range of 120-320 K and at several bias values. The noise magnitude is measured between 0.01 and 5 Hz at several gate voltages as the device turns from it's OFF to ON state. The presence of mid-gap states which act as charge traps within the band gap can potentially explain the observed transport characteristics. Sulfur vacancies are the likely origin of these mid-gap states which makes Bi2S3 nanowires appealing for defect engineering as a means to enhance its optoelectronic properties and also to better understand the important role of defects in nanoscale semiconductors.

Effect of device package on optical, spectral, and thermal properties of InGaN/GaN near-ultraviolet lateral light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Soo Hyun; Guan, Xiang-Yu; Jeon, Soo-Kun; Yu, Jae Su

2017-09-01

We investigated the package effect on the temperature-dependent optical and spectral characteristics of InGaN/GaN near-ultraviolet (NUV) lateral light-emitting diodes (LLEDs) on the metal heatsink (MH) and package (PKG) in the injection current range of 0 - 500 mA at 298 and 358 K. For the NUV LLEDs on the MH, the device characteristics reflected directly its chip performance. For the NUV LLEDs on the PKG, the rapidly varied spectral shift as well as the reduced device efficiency was observed due to the increased number of layers with relatively low thermal conductivities. The junction temperature ( T j ) and thermal resistance of the NUV LLEDs on the PKG were also significantly increased compared to the NUV LLEDs on the MH. The three-dimensional heat transfer simulations for both the devices were carried out to obtain the temperature distributions by finite element method. The theoretically calculated T j values showed a good agreement with the experimentally measured T j values.

Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.

PubMed

Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru; Aono, Masakazu

2012-01-10

An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is a great challenge for semiconductor devices. Atomic switches also possess novel characteristics, such as high on/off ratios, very low power consumption and non-volatility. The unique operating mechanisms of these devices have enabled the development of various types of atomic switch, such as gap-type and gapless-type two-terminal atomic switches and three-terminal atomic switches. Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated. Such atomic switch characteristics can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems, such as beyond von- Neumann computers. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The effect of extended sensory range via the EyeCane sensory substitution device on the characteristics of visionless virtual navigation.

PubMed

Maidenbaum, Shachar; Levy-Tzedek, Shelly; Chebat, Daniel Robert; Namer-Furstenberg, Rinat; Amedi, Amir

2014-01-01

Mobility training programs for helping the blind navigate through unknown places with a White-Cane significantly improve their mobility. However, what is the effect of new assistive technologies, offering more information to the blind user, on the underlying premises of these programs such as navigation patterns? We developed the virtual-EyeCane, a minimalistic sensory substitution device translating single-point-distance into auditory cues identical to the EyeCane's in the real world. We compared performance in virtual environments when using the virtual-EyeCane, a virtual-White-Cane, no device and visual navigation. We show that the characteristics of virtual-EyeCane navigation differ from navigation with a virtual-White-Cane or no device, and that virtual-EyeCane users complete more levels successfully, taking shorter paths and with less collisions than these groups, and we demonstrate the relative similarity of virtual-EyeCane and visual navigation patterns. This suggests that additional distance information indeed changes navigation patterns from virtual-White-Cane use, and brings them closer to visual navigation.

Systems, methods and computer-readable media to model kinetic performance of rechargeable electrochemical devices

DOEpatents

Gering, Kevin L.

2013-01-01

A system includes an electrochemical cell, monitoring hardware, and a computing system. The monitoring hardware samples performance characteristics of the electrochemical cell. The computing system determines cell information from the performance characteristics. The computing system also analyzes the cell information of the electrochemical cell with a Butler-Volmer (BV) expression modified to determine exchange current density of the electrochemical cell by including kinetic performance information related to pulse-time dependence, electrode surface availability, or a combination thereof. A set of sigmoid-based expressions may be included with the modified-BV expression to determine kinetic performance as a function of pulse time. The determined exchange current density may be used with the modified-BV expression, with or without the sigmoid expressions, to analyze other characteristics of the electrochemical cell. Model parameters can be defined in terms of cell aging, making the overall kinetics model amenable to predictive estimates of cell kinetic performance along the aging timeline.

Digital Holographic Logic

NASA Technical Reports Server (NTRS)

Preston, K., Jr.

1972-01-01

The characteristics of the holographic logic computer are discussed. The holographic operation is reviewed from the Fourier transform viewpoint, and the formation of holograms for use in performing digital logic are described. The operation of the computer with an experiment in which the binary identity function is calculated is discussed along with devices for achieving real-time performance. An application in pattern recognition using neighborhood logic is presented.

Experimental investigation of in-cylinder air flow to optimize number of helical guide vanes to enhance DI diesel engine performance using mamey sapote biodiesel

NASA Astrophysics Data System (ADS)

Kumar, A. Raj; Janardhana Raju, G.; Hemachandra Reddy, K.

2018-03-01

The current research work investigates the influence of helical guide vanes in to the intake runner of a D.I diesel engine operating by the high viscous Mamey Sapote biodiesel to enhance in-cylinder suction air flow features. Helical guide vanes of different number of vanes are produced from 3D printing and placed in the intake manifold to examine the air flow characteristics. Four different helical guide vane devices namely 3, 4, 5 and 6 vanes of the same dimensions are tested in a D.I diesel engine operating with Mamey Sapote biodiesel blend. As per the experimental results of engine performance and emission characteristics, it is found that 5 vanes helical guide vane swirl device exhibited in addition number of increased improvements such as the brake power and bake thermal efficiency by 2.4% and 8.63% respectively and the HC, NOx, Carbon monoxide and, Smoke densities are reduced by 15.62%, 4.23%, 14.27% and 9.6% at peak load operating conditions as collate with normal engine at the same load. Hence this investigation concluded that Helical Guide Vane Devices successfully enhanced the in-cylinder air flow to improve better addition of Mamey Sapote biodiesel with air leading in better performance of the engine than without vanes.

Electro-optical characterization of SiPM: A comparative study

NASA Astrophysics Data System (ADS)

Dinu, N.; Amara, Z.; Bazin, C.; Chaumat, V.; Cheikali, C.; Guilhem, G.; Puill, V.; Sylvia, C.; Vagnucci, J. F.

2009-10-01

This work reports on the development of an electro-optical set-up for the characterization of the Silicon PhotoMultiplier (SiPM) devices as well as on the comparative study of the characteristics of different SiPM prototypes. The electrical set-up allows the measurement of the static (breakdown voltage, overvoltage quenching resistance) and dynamic (gain, dark count rate) characteristics. The optical set-up allows the estimation of the photon detection efficiency as a function of the wavelength and the operation voltage. The comparative study has been performed on SiPM devices covering an area of 1×1 mm 2 and supplied during 2007 by Photonique S.A. (Switzerland), FBK-irst (Italy), SensL (Ireland) and Hamamatsu (Japan).

Veritable electronic characteristics in ZnO nanowire circuits uncovered by the four-terminal method at a low temperature

NASA Astrophysics Data System (ADS)

Li, Xin; Zhang, Qi

2017-04-01

Understanding the natural electrical properties in semiconductor channels and the carrier transport across the metal-semiconductor contact is essential to improve the performance of nanowire devices. This work presents the true electronic characteristics of ZnO nanowire devices measured by a four-electrode method at a low-temperature environment. The temperature rise leads to the decrease in near-band-gap emission, which is attributed to two non-radiative recombination processes. For ZnO circuits, thermionic emission carrier transport mechanism plays a dominant role at Ti-Au/ZnO interface and the transport mechanism in ZnO nanowires is governed by two competitive thermal activation conduction processes: optical or acoustic phonons assisting hopping.

Effect of Vibration on Retention Characteristics of Screen Acquisition Systems

NASA Technical Reports Server (NTRS)

Tegart, J. R.; Park, A. C.

1977-01-01

An analytical and experimental investigation of the effect of vibration on the retention characteristics of screen acquisition systems was performed. The functioning of surface tension devices using fine-mesh screens requires that the pressure differential acting on the screen be less than its pressure retention capability. When exceeded, screen breakdown will occur and gas-free expulsion of propellant will no longer be possible. An analytical approach to predicting the effect of vibration was developed. This approach considers the transmission of the vibration to the screens of the device and the coupling of the liquid and the screen in establishing the screen response. A method of evaluating the transient response of the gas/liquid interface within the screen was also developed.

Domestic water uses: characterization of daily cycles in the north region of Portugal.

PubMed

Matos, Cristina; Teixeira, Carlos A; Duarte, A A L S; Bentes, I

2013-08-01

Nowadays, there is an increasing discussion among specialists about water use efficiency and the best measures to improve it. In Portugal, there have been a few attempts to expand the implementation of in situ water reuse projects. However, there is a lack of information about indoor water uses and how they are influenced by sociodemographic characteristics. There are several studies that investigate per capita global water usage, but the partitioning of this volume per domestic device and daily cycles is yet unknown. Identified as one of the key questions in sustainable building design, the water end-use is of primary importance to the design of hydraulic networks in buildings. In order to overcome this lack, a quantitative characterization of daily water uses for each domestic device was performed, based on a weekly monitoring program in fifty-two different dwellings in the northern region of Portugal (Vila Real, Valpaços and Oporto). For forty of them, each water usage of different domestic devices of each dwelling was recorded. At the same time, the remaining twelve dwellings were also monitored in order to register the volume of water consumed in each utilization of each domestic device. This paper presents the results of this complete monitoring program, using collected data to establish indoor water use patterns for each domestic device, aiming to support a more realistic approach to residential water use. The daily cycles in the different cities, where the monitoring program was performed, are also presented, in order to evaluate possible influences of sociodemographic characteristics. Copyright © 2013 Elsevier B.V. All rights reserved.

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate.

PubMed

Sun, Bai; Zhang, Xuejiao; Zhou, Guangdong; Yu, Tian; Mao, Shuangsuo; Zhu, Shouhui; Zhao, Yong; Xia, Yudong

2018-06-15

In this work, a flexible resistive switching memory device based on ZnO film was fabricated using a foldable Polyethylene terephthalate (PET) film as substrate while Ag and Ti acts top and bottom electrode. Our as-prepared device represents an outstanding nonvolatile memory behavior with good "write-read-erase-read" stability at room temperature. Finally, a physical model of Ag conductive filament is constructed to understanding the observed memory characteristics. The work provides a new way for the preparation of flexible memory devices based on ZnO films, and especially provides an experimental basis for the exploration of high-performance and portable nonvolatile resistance random memory (RRAM). Copyright © 2018 Elsevier Inc. All rights reserved.

Crystal Growth of Device Quality Gaas in Space

NASA Technical Reports Server (NTRS)

Gatos, H. C.

1985-01-01

The GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and (3) investigation of electronic properties and phenomena controlling device applications and device performance. This effort is aimed at the essential ground-based program which would insure successful experimentation with and eventually processing of GaAs in near zero gravity environment. It is believed that this program addresses in a unique way materials engineering aspects which bear directly on the future exploitation of the potential of GaAs and related materials in device and systems applications.

Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beck, Patrick R.

2010-01-07

Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current ormore » leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.« less

Development of a flexible and bendable vibrotactile actuator based on wave-shaped poly(vinyl chloride)/acetyl tributyl citrate gels for wearable electronic devices

NASA Astrophysics Data System (ADS)

Park, Won-Hyeong; Bae, Jin Woo; Shin, Eun-Jae; Kim, Sang-Youn

2016-11-01

The paradigm of consumer electronic devices is being shifted from rigid hand-held devices to flexible/wearable devices in search of benefits such as enhanced usability and portability, excellent wear characteristics, and more functions in less space. However, the fundamental incompatibility of flexible/wearable devices and a rigid actuator brought forth a new issue obstructing commercialization of flexible/wearable devices. In this paper, we propose a new wave-shaped eco-friendly PVC gel, and a new flexible and bendable vibrotactile actuator that could easily be applied to wearable electronic devices. We explain the vibration mechanism of the proposed vibrotactile actuator and investigate its influence on the content of plasticizer for the performance of the proposed actuator. An experiment for measuring vibrational amplitude was conducted over a wide frequency range. The experiment clearly showed that the proposed vibrotactile actuator could create a variety of haptic sensations in wearable devices.

Hybrid optical fiber add-drop filter based on wavelength dependent light coupling between micro/nano fiber ring and side-polished fiber

NASA Astrophysics Data System (ADS)

Yu, Jianhui; Jin, Shaoshen; Wei, Qingsong; Zang, Zhigang; Lu, Huihui; He, Xiaoli; Luo, Yunhan; Tang, Jieyuan; Zhang, Jun; Chen, Zhe

2015-01-01

In this paper, we report our experimental study on directly coupling a micro/nano fiber (MNOF) ring with a side-polished fiber(SPF). As a result of the study, the behavior of an add-drop filter was observed. The demonstrated add-drop filter explored the wavelength dependence of light coupling between a MNOF ring and a SPF. The characteristics of the filter and its performance dependence on the MNOF ring diameter were investigated experimentally. The investigation resulted in an empirically obtained ring diameter that showed relatively good filter performance. Since light coupling between a (MNOF) and a conventional single mode fiber has remained a challenge in the photonic integration community, the present study may provide an alternative way to couple light between a MNOF device and a conventional single mode fiber based device or system. The hybridization approach that uses a SPF as a platform to integrate a MNOF device may enable the realization of other all-fiber optical hybrid devices.

Hybrid optical fiber add-drop filter based on wavelength dependent light coupling between micro/nano fiber ring and side-polished fiber.

PubMed

Yu, Jianhui; Jin, Shaoshen; Wei, Qingsong; Zang, Zhigang; Lu, Huihui; He, Xiaoli; Luo, Yunhan; Tang, Jieyuan; Zhang, Jun; Chen, Zhe

2015-01-12

In this paper, we report our experimental study on directly coupling a micro/nano fiber (MNOF) ring with a side-polished fiber(SPF). As a result of the study, the behavior of an add-drop filter was observed. The demonstrated add-drop filter explored the wavelength dependence of light coupling between a MNOF ring and a SPF. The characteristics of the filter and its performance dependence on the MNOF ring diameter were investigated experimentally. The investigation resulted in an empirically obtained ring diameter that showed relatively good filter performance. Since light coupling between a (MNOF) and a conventional single mode fiber has remained a challenge in the photonic integration community, the present study may provide an alternative way to couple light between a MNOF device and a conventional single mode fiber based device or system. The hybridization approach that uses a SPF as a platform to integrate a MNOF device may enable the realization of other all-fiber optical hybrid devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Pankaj, E-mail: pankaj@mail.nplindia.ernet.in; Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308; Bilen, Chhinder

The degradation and thermal regeneration of poly(3-hexylethiophene) (P3HT):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM) and P3HT:indene-C{sub 60} bisadduct (ICBA) polymer solar cells, with Ca/Al and Ca/Ag cathodes and indium tin oxide/poly(ethylene-dioxythiophene):polystyrene sulfonate anode have been investigated. Degradation occurs via a combination of three primary pathways: (1) cathodic oxidation, (2) active layer phase segregation, and (3) anodic diffusion. Fully degraded devices were subjected to thermal annealing under inert atmosphere. Degraded solar cells possessing Ca/Ag electrodes were observed to regenerate their performance, whereas solar cells having Ca/Al electrodes exhibited no significant regeneration of device characteristics after thermal annealing. Moreover, the solar cells withmore » a P3HT:ICBA active layer exhibited enhanced regeneration compared to P3HT:PCBM active layer devices as a result of reduced changes to the active layer morphology. Devices combining a Ca/Ag cathode and P3HT:ICBA active layer demonstrated ∼50% performance restoration over several degradation/regeneration cycles.« less

[Performance dependence of organic light-emitting devices on the thickness of Alq3 emitting layer].

PubMed

Lian, Jia-rong; Liao, Qiao-sheng; Yang, Rui-bo; Zheng, Wei; Zeng, Peng-ju

2010-10-01

The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied, where MoO3, NPB, and Alq3 were used as hole injector, hole transporter, and emitter/electron transporter, respectively. By increasing the thickness of Alq3 layer from 20 to 100 nm, the device current decreased gradually, and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range. The authors simulated the EL spectra using the photoluminescence (PL) spectra of Alq3 as Alq3 intrinsic emission, which coincided with the experimental EL spectra well. The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra, and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.

Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.

PubMed

Hu, Wei; Qin, Ni; Wu, Guangheng; Lin, Yanting; Li, Shuwei; Bao, Dinghua

2012-09-12

The opportunity of spinel ferrites in nonvolatile memory device applications has been demonstrated by the resistive switching performance characteristics of a Pt/NiFe(2)O(4)/Pt structure, such as low operating voltage, high device yield, long retention time (up to 10(5) s), and good endurance (up to 2.2 × 10(4) cycles). The dominant conduction mechanisms are Ohmic conduction in the low-resistance state and in the lower-voltage region of the high-resistance state and Schottky emission in the higher-voltage region of the high-resistance state. On the basis of measurements of the temperature dependence of the resistances and magnetic properties in different resistance states, we explain the physical mechanism of resistive switching of Pt/NiFe(2)O(4)/Pt devices using the model of formation and rupture of conducting filaments by considering the thermal effect of oxygen vacancies and changes in the valences of cations due to the redox effect.

Determining Desirable Cursor Control Device Characteristics for NASA Exploration Missions

NASA Technical Reports Server (NTRS)

Sandor, Aniko; Holden, Kritina

2007-01-01

The Crew Exploration Vehicle (CEV) that will travel to the moon and Mars, and all future Exploration vehicles and habitats will be highly computerized, necessitating an accurate method of interaction with the computers. The design of a cursor control device will have to take into consideration g-forces, vibration, gloved operations, and the specific types of tasks to be performed. The study described here is being undertaken to begin identifying characteristics of cursor control devices that will work well for the unique Exploration mission environments. The objective of the study is not to identify a particular device, but to begin identifying design characteristics that are usable and desirable for space missions. Most cursor control devices have strengths and weaknesses; they are more appropriate for some tasks and less suitable for others. The purpose of this study is to collect some initial usability data on a large number of commercially available and proprietary cursor control devices. A software test battery was developed for this purpose. Once data has been collected using these low-level, basic point/click/drag tasks, higher fidelity, scenario-driven evaluations will be conducted with a reduced set of devices. The standard tasks used for testing cursor control devices are based on a model of human movement known as Fitts law. Fitts law predicts that the time to acquire a target is logarithmically related to the distance over the target size. To gather data for analysis with this law, fundamental, low-level tasks are used such as dragging or pointing at various targets of different sizes from various distances. The first four core tasks for the study were based on the ISO 9241-9:(2000) document from the International Organization for Standardization that contains the requirements for non-keyboard input devices. These include two pointing tasks, one dragging and one tracking task. The fifth task from ISO 9241-9, the circular tracking task was not used because it is a movement that is not applicable to most of the applications used on aviation displays. Additionally, we opted to add a multi-size and multi-distance pointing task, and two ecologically more valid tasks which included text selection, and interaction with drop down menus, sliders, and checkboxes. The Visual Basic test battery tracks the task and trial numbers, measures the pointing, tracking or dragging time, as well as the number and types of errors. The testing session includes a practice set for each input device, then the randomized 7 tasks, and finally a questionnaire about the device. This is repeated for all the devices tested within a session. The experiment is a within-subjects design, with participants returning for multiple sessions to test additional devices. The input devices will be compared based on objective performance data from the tasks, as well as subjective feedback and ratings on the questionnaire.

Ultrawide Shipboard Electrooptic Electromagnetic Environment Monitoring

DTIC Science & Technology

1994-05-01

ridge-waveguide modulator has a device length of 300 fpm, a waveguide thickness of 0.4 pm, a device capacitance of 0.2 pF, and a r x- 0.7. For digital ...important noise sources identified. Particular attention will be paid to the performance characteristics of the optical modulator. For digital ...1.32 tM for digital as well as analog optical link applications. The operation of the FKE modulator was discussed in Section 2.1.2 of this report. At

Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells

DOE PAGES

Ray, Biswajit; Baradwaj, Aditya G.; Khan, Mohammad Ryyan; ...

2015-08-19

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. In this paper, we show that the short-circuit current density from SS-OPVmore » devices can be enhanced significantly (~100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: ( i) detailed numerical simulations, ( ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and ( iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. Finally, these insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials.« less

First principles calculations of La2O3/GaAs interface properties under biaxial strain and hydrostatic pressure

NASA Astrophysics Data System (ADS)

Shi, Li-Bin; Li, Ming-Biao; Xiu, Xiao-Ming; Liu, Xu-Yang; Zhang, Kai-Cheng; Li, Chun-Ran; Dong, Hai-Kuan

2017-04-01

La2O3 is a potential dielectric material with high permittivity (high-κ) for metal-oxide-semiconductor (MOS) devices. However, band offsets and oxide defects should still be concerned. Smaller band offsets and carrier traps increase leakage current, and degenerate performance of the devices. In this paper, the interface behaviors of La2O3/GaAs under biaxial strain and hydrostatic pressure are investigated, which is performed by first principles calculations based on density functional theory (DFT). Strain engineering is attempted to improve performance of the metal/La2O3/GaAs devices. First of all, we creatively realize band alignment of La2O3/GaAs interface under biaxial strain and hydrostatic pressure. The proper biaxial tensile strain can effectively increase valence band offsets (VBO) and conduction band offsets (CBO), which can be used to suppress leakage current. However, the VBO will decrease with the increase of hydrostatic pressure, indicating that performance of the devices is degenerated. Then, a direct tunneling leakage current model is used to investigate current and voltage characteristics of the metal/La2O3/GaAs. The impact of biaxial strain and hydrostatic pressure on leakage current is discussed. At last, formation energies and transition levels of oxygen interstitial (Oi) and oxygen vacancy (VO) in La2O3 are assessed. We investigate how they will affect performance of the devices.

Forecasting of the performance of MOS device for space applications

NASA Technical Reports Server (NTRS)

Fang, P. H.

1971-01-01

Analysis of radiation damage of MOSFET data from Explorer 34 (IMP-F), and radiation damage characteristics of MOSFET with boron diffused between a silicon semiconductor and silicon oxide are considered. The first subject is an interpretation of the discrepancy between the space data and the laboratory data. The second subject is an attempt to analyze the radiation damage characteristic of MOSFET when there is modification of electrical properties in the gate oxide region.

Property influence of polyanilines on photovoltaic behaviors of dye-sensitized solar cells.

PubMed

Tan, Shuxin; Zhai, Jin; Xue, Bofei; Wan, Meixiang; Meng, Qingbo; Li, Yuliang; Jiang, Lei; Zhu, Daoben

2004-03-30

The influence of polyanilines (PANIs) as hole conductors on the photovoltaic behaviors of dye-sensitized solar cells is studied. The current-voltage (I-V) characteristics and the incident photon to current conversion efficiency (IPCE) curves of the devices are determined as the function of different conductivities and morphologies of PANIs. The results show that the conductivity of PANIs affects the performance of the devices greatly, and PANI with the intermediate conductivity value (3.5 S/cm) is optimum. In addition, the effects of both the film formation property and the cluster size of polyanilines on the photovoltaic behaviors of the devices are also discussed.

A ZnO nanowire resistive switch

NASA Astrophysics Data System (ADS)

Karthik, K. R. G.; Ramanujam Prabhakar, Rajiv; Hai, L.; Batabyal, Sudip K.; Huang, Y. Z.; Mhaisalkar, S. G.

2013-09-01

An individual ZnO nanowire resistive switch is evaluated with Pt/ZnO nanowire/Pt topology. A detailed DC I-V curve analysis is performed to bring both the conduction mechanism and the device characteristics to light. The device is further studied at various vacuum pressures to ascertain the presence of polar charges in ZnO nanowires as the phenomenon leading to the formation of the switch. The disappearance of the resistive switching is also analyzed with two kinds of fabrication approaches Focused Ion/Electron Beam involved in the making the device and a summary of both length and fabrication dependences of resistive switching in the ZnO nanowire is presented.

Recent Advancements in Functionalized Paper-Based Electronics.

PubMed

Lin, Yang; Gritsenko, Dmitry; Liu, Qian; Lu, Xiaonan; Xu, Jie

2016-08-17

Building electronic devices on ubiquitous paper substrates has recently drawn extensive attention due to its light weight, low cost, environmental friendliness, and ease of fabrication. Recently, a myriad of advancements have been made to improve the performance of paper electronics for various applications, such as basic electronic components, energy storage devices, generators, antennas, and electronic circuits. This review aims to summarize this progress and discuss different perspectives of paper electronics as well as the remaining challenges yet to be overcome in this field. Other aspects included in this review are the fundamental characteristics of paper, modification of paper with functional materials, and various methods for device fabrication.

Active Member Design, Modeling, and Verification

NASA Technical Reports Server (NTRS)

Umland, Jeffrey W.; Webster, Mark; John, Bruce

1993-01-01

The design and development of active members intended for use in structural control applications is presented. The use of three different solid state actuation materials, namely, piezoelectric, electrostictive, and magnetostrictive, is discussed. Test data is given in order to illustrate the actuator and device characteristics and performance.

Enhanced performance of amorphous In-Ga-Zn-O thin-film transistors using different metals for source/drain electrodes

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2017-09-01

In this paper, we propose an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with off-planed source/drain electrodes. We applied different metals for the source/drain electrodes with Ni and Ti to control the work function as high and low. When we measured the configuration of Ni to drain and source to Ti, the a-IGZO TFT showed increased driving current, decreased leakage current, a high on/off current ratio, low subthreshold swing, and high mobility. In addition, we conducted a reliability test with a gate bias stress test at various temperatures. The results of the reliability test showed the Ni drain and Ti drain had an equivalent effective energy barrier height. Thus, we confirmed that the proposed off-planed structure improved the electrical characteristics of the fabricated devices without any degradation of characteristics. Through the a-IGZO TFT with different source/drain electrode metal engineering, we realized high-performance TFTs for next-generation display devices.

Augmentation of maneuver performance by spanwise blowing

NASA Technical Reports Server (NTRS)

Erickson, G. E.; Campbell, J. F.

1977-01-01

A generalized wind tunnel model was tested to investigate new component concepts utilizing spanwise blowing to provide improved maneuver characteristics for advanced fighter aircraft. Primary emphasis was placed on high angle of attack performance, stability, and control at subsonic speeds. Spanwise blowing on a 44 deg swept trapezoidal wing resulted in leading edge vortex enhancement with subsequent large vortex-induced lift increments and drag polar improvements at the higher angles of attack. Small deflections of a leading edge flap delayed these lift and drag benefits to higher angles of attack. In addition, blowing was more effective at higher Mach numbers. Spanwise blowing in conjunction with a deflected trailing edge flap resulted in lift and drag benefits that exceeded the summation of the effects of each high lift device acting alone. Asymmetric blowing was an effective lateral control device at the higher angles of attack. Spanwise blowing on the wing reduced horizontal tail loading and improved the lateral-directional stability characteristics of a wing-horizontal tail-vertical tail configuration.

A Simple Memristor Model for Circuit Simulations

NASA Astrophysics Data System (ADS)

Fullerton, Farrah-Amoy; Joe, Aaleyah; Gergel-Hackett, Nadine; Department of Chemistry; Physics Team

This work describes the development of a model for the memristor, a novel nanoelectronic technology. The model was designed to replicate the real-world electrical characteristics of previously fabricated memristor devices, but was constructed with basic circuit elements using a free widely available circuit simulator, LT Spice. The modeled memrsistors were then used to construct a circuit that performs material implication. Material implication is a digital logic that can be used to perform all of the same basic functions as traditional CMOS gates, but with fewer nanoelectronic devices. This memristor-based digital logic could enable memristors' use in new paradigms of computer architecture with advantages in size, speed, and power over traditional computing circuits. Additionally, the ability to model the real-world electrical characteristics of memristors in a free circuit simulator using its standard library of elements could enable not only the development of memristor material implication, but also the development of a virtually unlimited array of other memristor-based circuits.

Performance evaluation of bottom gate ZnO based thin film transistors with different W/L ratios for UV sensing

NASA Astrophysics Data System (ADS)

Varma, Tarun; Periasamy, C.; Boolchandani, Dharmendar

2018-02-01

In this paper, we report the simulation, fabrication and characterisation of UV photo-detectors with bottom gate ZnO Thin Film Transistors (TFTs), grown on silicon at room temperature using RF magnetron sputtering process. The static performance of these detectors have been explored by varying the channel lengths (6 μm and 12 μm). The fabricated devices show low leakage currents with threshold voltages of 1.18 & 2.33 V, sub-threshold swings of 13.5 & 12.8 V/dec for channel lengths of 6 μm and 12 μm TFT, respectively. They also exhibit superior electrical characteristics with an ON-OFF ratio of the order of 3. The detector was also tested for device stability, with the transfer characteristics of the TFTs, which got deteriorated mainly by the negative bias-stress. The TFTs were further tested for UV detector applications and found to exhibit good photo-response.

Space Cryogenics Workshop, University of Wisconsin, Madison, June 22, 23, 1987

NASA Technical Reports Server (NTRS)

1988-01-01

Papers are presented on liquid helium servicing from the Space Station, performance estimates in the Superfluid Helium On-Orbit Transfer Flight Experiment, an analytical study of He II flow characteristics in the SHOOT transfer line, a Dewar to Dewar model for superfluid helium transfer, and mechanical pumps for superfluid helium transfer in space. Attention is also given to the cavitation characteristics of a small centrifugal pump in He I and He II, turbulent flow pressure drop in various He II transfer system components, slip effects associated with Knudsen transport phenomena in porous media, and an integrated fountain effect pump device for fluid management at low gravity. Other papers are on liquid/vapor phase separation in He-4 using electric fields, an enclosed capillary device for low-gravity management of He II, cavitation in flowing superfluid helium, the long-term performance of the passive thermal control systems of the IRAS spacecraft, and a novel approach to supercritical helium flight cryostat support structures.

Modulated CH3NH3PbI3−xBrx film for efficient perovskite solar cells exceeding 18%

PubMed Central

Tu, Yongguang; Wu, Jihuai; Lan, Zhang; He, Xin; Dong, Jia; Jia, Jinbiao; Guo, Panfeng; Lin, Jianming; Huang, Miaoliang; Huang, Yunfang

2017-01-01

The organic-inorganic lead halide perovskite layer is a crucial factor for the high performance perovskite solar cell (PSC). We introduce CH3NH3Br in the precursor solution to prepare CH3NH3PbI3−xBrx hybrid perovskite, and an uniform perovskite layer with improved crystallinity and apparent grain contour is obtained, resulting in the significant improvement of photovoltaic performance of PSCs. The effects of CH3NH3Br on the perovskite morphology, crystallinity, absorption property, charge carrier dynamics and device characteristics are discussed, and the improvement of open circuit voltage of the device depended on Br doping is confirmed. Based on above, the device based on CH3NH3PbI2.86Br0.14 exhibits a champion power conversion efficiency (PCE) of 18.02%. This study represents an efficient method for high-performance perovskite solar cell by modulating CH3NH3PbI3−xBrx film. PMID:28303938

Enhanced performance of ferroelectric-based all organic transistors and capacitors through choice of solvent

NASA Astrophysics Data System (ADS)

Knotts, Grant; Bhaumik, Anagh; Ghosh, Kartik; Guha, Suchismita

2014-03-01

We examine the role of solvents in the performance of pentacene devices using the ferroelectric copolymer poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFe) as a gate insulating layer. High dipole moment solvents such as dimethyl sulfoxide used to dissolve the copolymer for spin casting increase the charge carrier mobility in field-effect transistors by nearly an order of magnitude as compared to lower dipole moment solvents. The polarization in Al/PVDF-TrFe/Au metal-ferroelectric-metal devices is also investigated. An increase in remnant polarization of ~ 20% is observed in the sample using dimethyl sulfoxide as the ferroelectric solvent. Interestingly, at low applied electric fields of ~ 100 MV/m a remnant polarization is seen in the high dipole moment device that is nearly 3.5 times larger than the value observed in the lower dipole moment samples, suggesting that the degree of dipolar order is higher at low operating voltages for the high dipole moment device. Detailed analysis of the capacitance characteristics of metal-insulator-semiconductor structure is performed. The density of interface trap states is nearly an order of magnitude lower for the high dipole moment device. This work was supported by National Science Foundation under Grant No. ECCS-1305642.

A neural network device for on-line particle identification in cosmic ray experiments

NASA Astrophysics Data System (ADS)

Scrimaglio, R.; Finetti, N.; D'Altorio, L.; Rantucci, E.; Raso, M.; Segreto, E.; Tassoni, A.; Cardarilli, G. C.

2004-05-01

On-line particle identification is one of the main goals of many experiments in space both for rare event studies and for optimizing measurements along the orbital trajectory. Neural networks can be a useful tool for signal processing and real time data analysis in such experiments. In this document we report on the performances of a programmable neural device which was developed in VLSI analog/digital technology. Neurons and synapses were accomplished by making use of Operational Transconductance Amplifier (OTA) structures. In this paper we report on the results of measurements performed in order to verify the agreement of the characteristic curves of each elementary cell with simulations and on the device performances obtained by implementing simple neural structures on the VLSI chip. A feed-forward neural network (Multi-Layer Perceptron, MLP) was implemented on the VLSI chip and trained to identify particles by processing the signals of two-dimensional position-sensitive Si detectors. The radiation monitoring device consisted of three double-sided silicon strip detectors. From the analysis of a set of simulated data it was found that the MLP implemented on the neural device gave results comparable with those obtained with the standard method of analysis confirming that the implemented neural network could be employed for real time particle identification.

Charge-coupled-device X-ray detector performance model

NASA Technical Reports Server (NTRS)

Bautz, M. W.; Berman, G. E.; Doty, J. P.; Ricker, G. R.

1987-01-01

A model that predicts the performance characteristics of CCD detectors being developed for use in X-ray imaging is presented. The model accounts for the interactions of both X-rays and charged particles with the CCD and simulates the transport and loss of charge in the detector. Predicted performance parameters include detective and net quantum efficiencies, split-event probability, and a parameter characterizing the effective thickness presented by the detector to cosmic-ray protons. The predicted performance of two CCDs of different epitaxial layer thicknesses is compared. The model predicts that in each device incomplete recovery of the charge liberated by a photon of energy between 0.1 and 10 keV is very likely to be accompanied by charge splitting between adjacent pixels. The implications of the model predictions for CCD data processing algorithms are briefly discussed.

A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures

NASA Astrophysics Data System (ADS)

Mei, Yang; Xu, Rong-Bin; Xu, Huan; Ying, Lei-Ying; Zheng, Zhi-Wei; Zhang, Bao-Ping; Li, Mo; Zhang, Jian

2018-01-01

Thermal characteristics of GaN-based vertical cavity surface emitting lasers (VCSELs) with three typical structures were investigated both theoretically and experimentally. The simulation results based on a steady state quasi three-dimensional cylindrical model show that the thermal resistance (R th) is affected by cavity length, mesa size, as well as the bottom distributed Bragg reflector (DBR) size, and the detail further depends on different structures. Among different devices, GaN VCSEL with a hybrid cavity formed by one nitride bottom DBR and another dielectric top DBR is featured with lower R th, which is meanwhile affected strongly by the materials of the epitaxial bottom DBR. The main issues affecting the thermal dissipation in VCSELs with double dielectric DBRs are the bottom dielectric DBR and the dielectric current-confinement layer. To validate the simulation results, GaN-based VCSEL bonded on a copper plate was fabricated. R th of this device was measured and the results agreed well with the simulation. This work provides a better understanding of the thermal characteristics of GaN-based VCSELs and is useful in optimizing the structure design and improving the device performance.

Performance evaluation of photoacoustic oximetry imaging systems using a dynamic blood flow phantom with tunable oxygen saturation

NASA Astrophysics Data System (ADS)

Vogt, William C.; Zhou, Xuewen; Andriani, Rudy; Wear, Keith A.; Garra, Brian S.; Pfefer, Joshua

2018-02-01

Photoacoustic Imaging (PAI) is an emerging technology with strong potential for broad clinical applications from breast cancer detection to cerebral monitoring due to its ability to compute maps of blood oxygen saturation (SO2) distribution in deep tissues using multispectral imaging. However, no well-validated consensus test methods currently exist for evaluating oximetry-specific performance characteristics of PAI devices. We have developed a phantombased flow system capable of rapid SO2 adjustment to serve as a test bed for elucidation of factors impacting SO2 measurement and quantitative characterization of device performance. The flow system is comprised of a peristaltic pump, membrane oxygenator, oxygen and nitrogen gas, and in-line oxygen, pH, and temperature sensors that enable real-time estimation of SO2 reference values. Bovine blood was delivered through breast-relevant tissue phantoms containing vessel-mimicking fluid channels, which were imaged using a custom multispectral PAI system. Blood was periodically drawn for SO2 measurement in a clinical-grade CO-oximeter. We used this flow phantom system to evaluate the impact of device parameters (e.g.,wavelength-dependent fluence corrections) and tissue parameters (e.g. fluid channel depth, blood SO2, spectral coloring artifacts) on oximetry measurement accuracy. Results elucidated key challenges in PAI oximetry and device design trade-offs, which subsequently allowed for optimization of system performance. This approach provides a robust benchtop test platform that can support PAI oximetry device optimization, performance validation, and clinical translation, and may inform future development of consensus test methods for performance assessment of photoacoustic oximetry imaging systems.

Development and performance evaluation of an MR squeeze-mode damper

NASA Astrophysics Data System (ADS)

Sapiński, Bogdan; Gołdasz, Janusz

2015-11-01

In this paper the authors present results of a magnetorheological (MR) damper prototype development and performance evaluation study. The damper is a device functioning in the so-called squeeze-mode of MR fluid flow regime of operation. By principle, in a squeeze-mode damper the control (working) gap height varies according to the prescribed displacement or force input profile. Such hardware has been claimed to be well suited to small-amplitude vibration damping applications. However, it is still in its infancy. Its potential seems appealing yet unclear. Accordingly, the authors reveal performance figures of the damper complemented by numerical finite-element simulations of the electro-magnetic circuit of the device. The numerical results are presented in the form of maps of averaged magnetic flux density versus coil current and gap height as well as magnetic flux, inductance, and cogging force calculations, respectively. The simulated data are followed by experimental evaluation of the damper performance incorporating plots of force versus piston displacement (velocity) across a prescribed range of excitation inputs. Moreover, some insight into transient (unsteady) characteristics of the device is provided through testing results involving transient currents.

Investigation of Short Channel Effects on Device Performance for 60nm NMOS Transistor

NASA Astrophysics Data System (ADS)

Chinnappan, U.; Sanudin, R.

2017-08-01

In the aggressively scaled complementary metal oxide semiconductor (CMOS) devices, shallower p-n junctions and low sheet resistances are essential for short-channel effect (SCE) control and high device performance. The SCE are attributed to two physical phenomena that are the limitation imposed on electron drift characteristics in channel and the modification of the threshold voltage (Vth) due to the shortening channel length. The decrement of Vth with decrement in gate length is a well-known attribute in SCE known as “threshold voltage roll-off’. In this research, the Technology Computer Aided Design (TCAD) was used to model the SCE phenomenon effect on 60nm n-type metal oxide semiconductor (NMOS) transistor. There are three parameters being investigated, which are the oxide thickness (Tox), gate length (L), acceptor concentration (Na). The simulation data were used to visualise the effect of SCE on the 60nm NMOS transistor. Simulation data suggest that all three parameters have significant effect on Vth, and hence on the transistor performance. It is concluded that there is a trade-off among these three parameters to obtain an optimized transistor performance.

High-performance transistors for bioelectronics through tuning of channel thickness

PubMed Central

Rivnay, Jonathan; Leleux, Pierre; Ferro, Marc; Sessolo, Michele; Williamson, Adam; Koutsouras, Dimitrios A.; Khodagholy, Dion; Ramuz, Marc; Strakosas, Xenofon; Owens, Roisin M.; Benar, Christian; Badier, Jean-Michel; Bernard, Christophe; Malliaras, George G.

2015-01-01

Despite recent interest in organic electrochemical transistors (OECTs), sparked by their straightforward fabrication and high performance, the fundamental mechanism behind their operation remains largely unexplored. OECTs use an electrolyte in direct contact with a polymer channel as part of their device structure. Hence, they offer facile integration with biological milieux and are currently used as amplifying transducers for bioelectronics. Ion exchange between electrolyte and channel is believed to take place in OECTs, although the extent of this process and its impact on device characteristics are still unknown. We show that the uptake of ions from an electrolyte into a film of poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) leads to a purely volumetric capacitance of 39 F/cm3. This results in a dependence of the transconductance on channel thickness, a new degree of freedom that we exploit to demonstrate high-quality recordings of human brain rhythms. Our results bring to the forefront a transistor class in which performance can be tuned independently of device footprint and provide guidelines for the design of materials that will lead to state-of-the-art transistor performance. PMID:26601178

Current-voltage characteristics of organic semiconductors: Interfacial control between organic layers and electrodes

NASA Astrophysics Data System (ADS)

Kondo, Takeshi

2007-12-01

Current-voltage (I-V) characteristics of organic molecular glasses and solution processable materials embedded between two electrodes were studied to find materials possessing high charge-carrier mobilities and to design organic memory devices. The comparison studies between TOF, FET and SCLC measurements confirm the validity of using analyses of I-V characteristics to determine the mobility of organic semiconductors. Hexaazatrinaphthylene derivatives tri-substituted by electron withdrawing groups were characterized as potential electron transporting molecular glasses. The presence of two isomers has important implications for film morphology and effective mobility. The statistical isomer mixture of hexaazatrinaphthylene derivatized with pentafluoro-phenylmethyl ester is able to form amorphous films, and electron mobilities with the range of 10--2 cm2/Vs are observed in their I-V characteristics. Single-layer organic memory devices consisting of a polymer layer embedded between an Al electrode and ITO modified with Ag nanodots (Ag-NDs) prepared by a solution-based surface assembly demonstrated a potential capability as nonvolatile organic memory device with high ON/OFF switching ratios of 10 4. This level of performance could be achieved by modifying the ITO electrodes with some Ag-NDs that act as trapping sites, reducing the current in the OFF state. Based upon the observed electrical characteristics, the currents of the low-resistance state can be attributed to a tunneling through low-resistance pathways of metal particles originating from the metal top electrode in the organic layer and that the high-resistance state is controlled by charge trapping by the metal particles including Ag-NDs. In an alternative approach, complex films of AgNO3: hexaazatrinaphthylene derivatives were studied as the active layers for all-solution processed and air-stable organic memory devices. Rewritable memory effects were observed in the devices comprised of a thin polymer dielectric layer deposited on the bottom electrode, the complex film, and a conducting polymer film as the top electrode. The electrical characteristics indicate that the accumulation of Ag+ ions at the interface of the complex film and the top electrode may contribute to the switching effect.

Nonlinear current-voltage characteristics based on semiconductor nanowire networks enable a new concept in thermoelectric device optimization

NASA Astrophysics Data System (ADS)

Diaz Leon, Juan J.; Norris, Kate J.; Hartnett, Ryan J.; Garrett, Matthew P.; Tompa, Gary S.; Kobayashi, Nobuhiko P.

2016-08-01

Thermoelectric (TE) devices that produce electric power from heat are driven by a temperature gradient (Δ T = T_{{hot}} - T_{{cold}}, T hot: hot side temperature, T cold: cold side temperature) with respect to the average temperature ( T). While the resistance of TE devices changes as Δ T and/or T change, the current-voltage ( I- V) characteristics have consistently been shown to remain linear, which clips generated electric power ( P gen) within the given open-circuit voltage ( V OC) and short-circuit current ( I SC). This P gen clipping is altered when an appropriate nonlinearity is introduced to the I- V characteristics—increasing P gen. By analogy, photovoltaic cells with a large fill factor exhibit nonlinear I- V characteristics. In this paper, the concept of a unique TE device with nonlinear I- V characteristics is proposed and experimentally demonstrated. A single TE device with nonlinear I- V characteristics is fabricated by combining indium phosphide (InP) and silicon (Si) semiconductor nanowire networks. These TE devices show P gen that is more than 25 times larger than those of comparable devices with linear I- V characteristics. The plausible causes of the nonlinear I- V characteristics are discussed. The demonstrated concept suggests that there exists a new pathway to increase P gen of TE devices made of semiconductors.

Optoelectronic characteristics of MEH-PPV + BT blend thin films in polymer light emitting diodes

NASA Astrophysics Data System (ADS)

Massah Bidgoli, M.; Mohsennia, M.; Akbari Boroumand, F.; Mohsen Nia, A.

2015-06-01

Due to the unique optical and electronic properties of conjugated polymers, much research has been conducted to study the effect of the incorporation of electron-transporting materials on the polymer blends’ compatibility and their capability for use in optoelectronic devices. In this work, to characterize the optoelectronic properties of blend thin films of poly [2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) with benzothiadiazole (BT), polymer light- emitting diodes (PLEDs) with single-emission layers of MEH-PPV + BT blends have been fabricated. The influence of MEH-PPV + BT blend weight ratios over ITO/PEDOT:PSS/MEH-PPV + BT/Al PLEDs performances, e.g., lifetime, turn-on voltage, and current density-voltage (J-V) characteristics, has been studied. According to the obtained results, the turn-on voltage of the devices successfully decreased with the addition of the BT as an electronic transportation material. At an optimum condition, we obtained a turn-on voltage as low as 5 V and a lifetime of about 190 h for a device incorporating 65% BT. The logarithmic plots of the J-V characteristics of the fabricated devices showed a power law behavior (J ∝ Vk+1) with three distinct regions. The J-V characteristics have been explained by the Fowler-Nordheim (FN) tunneling model. It was found that the hole-injection barrier height decreases with increasing BT content in the range of 0-65%. According to the obtained results, in all of our investigations, the electroluminescence (EL) originated exclusively from the MEH-PPV material, even for the high BT contents.

Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics

PubMed Central

Park, Sungjun; Lee, SeYeong; Kim, Chang-Hyun; Lee, Ilseop; Lee, Won-June; Kim, Sohee; Lee, Byung-Geun; Jang, Jae-Hyung; Yoon, Myung-Han

2015-01-01

Recently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages and prolonged device stability under physiological conditions. Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor and aqueous electrolyte dielectrics based on small ionic salts. The proper selection of channel material (i.e., indium-gallium-zinc-oxide) and precautious passivation of non-channel areas enabled the development of simple but highly stable metal oxide transistors manifested by low operation voltages within 0.5 V, high transconductance of ~1.0 mS, large current on-off ratios over 107, and fast inverter responses up to several hundred hertz without device degradation even in physiologically-relevant ionic solutions. In conjunction with excellent transistor characteristics, investigation of the electrochemical nature of the metal oxide-electrolyte interface may contribute to the development of a viable bio-electronic platform directly interfacing with biological entities in vivo. PMID:26271456

InGaAs-based planar barrier diode as microwave rectifier

NASA Astrophysics Data System (ADS)

Farhani Zakaria, Nor; Rizal Kasjoo, Shahrir; Zailan, Zarimawaty; Mohamad Isa, Muammar; Arshad, Mohd Khairuddin Md; Taking, Sanna

2018-06-01

In this report, we proposed and simulated a new planar nonlinear rectifying device fabricated using InGaAs substrate and referred to as a planar barrier diode (PBD). Using an asymmetrical inverse-arrowhead-shaped structure between the electrodes, a nonuniform depletion region is developed, which creates a triangular energy barrier in the conducting channel. This barrier is voltage dependent and can be controlled by the applied voltage across the PBD, thus resulting in nonlinear diode-like current–voltage characteristics; thus it can be used as a rectifying device. The PBD’s working principle is explained using thermionic emission theory. Furthermore, by varying the PBD’s geometric design, the asymmetry of the current–voltage characteristics can be optimized to realize superior rectification performance. By employing the optimized structural parameters, the obtained cut-off frequency of the device was approximately 270 GHz with a curvature coefficient peak of 14 V‑1 at a low DC bias voltage of 50 mV.

A hysteretic model considering Stribeck effect for small-scale magnetorheological damper

NASA Astrophysics Data System (ADS)

Zhao, Yu-Liang; Xu, Zhao-Dong

2018-06-01

Magnetorheological (MR) damper is an ideal semi-active control device for vibration suppression. The mechanical properties of this type of devices show strong nonlinear characteristics, especially the performance of the small-scale dampers. Therefore, developing an ideal model that can accurately describe the nonlinearity of such device is crucial to control design. In this paper, the dynamic characteristics of a small-scale MR damper developed by our research group is tested, and the Stribeck effect is observed in the low velocity region. Then, an improved model based on sigmoid model is proposed to describe this Stribeck effect observed in the experiment. After that, the parameters of this model are identified by genetic algorithms, and the mathematical relationship between these parameters and the input current, excitation frequency and amplitude is regressed. Finally, the predicted forces of the proposed model are validated with the experimental data. The results show that this model can well predict the mechanical properties of the small-scale damper, especially the Stribeck effect in the low velocity region.

Solving data-at-rest for the storage and retrieval of files in ad hoc networks

NASA Astrophysics Data System (ADS)

Knobler, Ron; Scheffel, Peter; Williams, Jonathan; Gaj, Kris; Kaps, Jens-Peter

2013-05-01

Based on current trends for both military and commercial applications, the use of mobile devices (e.g. smartphones and tablets) is greatly increasing. Several military applications consist of secure peer to peer file sharing without a centralized authority. For these military applications, if one or more of these mobile devices are lost or compromised, sensitive files can be compromised by adversaries, since COTS devices and operating systems are used. Complete system files cannot be stored on a device, since after compromising a device, an adversary can attack the data at rest, and eventually obtain the original file. Also after a device is compromised, the existing peer to peer system devices must still be able to access all system files. McQ has teamed with the Cryptographic Engineering Research Group at George Mason University to develop a custom distributed file sharing system to provide a complete solution to the data at rest problem for resource constrained embedded systems and mobile devices. This innovative approach scales very well to a large number of network devices, without a single point of failure. We have implemented the approach on representative mobile devices as well as developed an extensive system simulator to benchmark expected system performance based on detailed modeling of the network/radio characteristics, CONOPS, and secure distributed file system functionality. The simulator is highly customizable for the purpose of determining expected system performance for other network topologies and CONOPS.

Framework for automatic information extraction from research papers on nanocrystal devices

PubMed Central

Yoshioka, Masaharu; Hara, Shinjiro; Newton, Marcus C

2015-01-01

Summary To support nanocrystal device development, we have been working on a computational framework to utilize information in research papers on nanocrystal devices. We developed an annotated corpus called “ NaDev” (Nanocrystal Device Development) for this purpose. We also proposed an automatic information extraction system called “NaDevEx” (Nanocrystal Device Automatic Information Extraction Framework). NaDevEx aims at extracting information from research papers on nanocrystal devices using the NaDev corpus and machine-learning techniques. However, the characteristics of NaDevEx were not examined in detail. In this paper, we conduct system evaluation experiments for NaDevEx using the NaDev corpus. We discuss three main issues: system performance, compared with human annotators; the effect of paper type (synthesis or characterization) on system performance; and the effects of domain knowledge features (e.g., a chemical named entity recognition system and list of names of physical quantities) on system performance. We found that overall system performance was 89% in precision and 69% in recall. If we consider identification of terms that intersect with correct terms for the same information category as the correct identification, i.e., loose agreement (in many cases, we can find that appropriate head nouns such as temperature or pressure loosely match between two terms), the overall performance is 95% in precision and 74% in recall. The system performance is almost comparable with results of human annotators for information categories with rich domain knowledge information (source material). However, for other information categories, given the relatively large number of terms that exist only in one paper, recall of individual information categories is not high (39–73%); however, precision is better (75–97%). The average performance for synthesis papers is better than that for characterization papers because of the lack of training examples for characterization papers. Based on these results, we discuss future research plans for improving the performance of the system. PMID:26665057

Framework for automatic information extraction from research papers on nanocrystal devices.

PubMed

Dieb, Thaer M; Yoshioka, Masaharu; Hara, Shinjiro; Newton, Marcus C

2015-01-01

To support nanocrystal device development, we have been working on a computational framework to utilize information in research papers on nanocrystal devices. We developed an annotated corpus called " NaDev" (Nanocrystal Device Development) for this purpose. We also proposed an automatic information extraction system called "NaDevEx" (Nanocrystal Device Automatic Information Extraction Framework). NaDevEx aims at extracting information from research papers on nanocrystal devices using the NaDev corpus and machine-learning techniques. However, the characteristics of NaDevEx were not examined in detail. In this paper, we conduct system evaluation experiments for NaDevEx using the NaDev corpus. We discuss three main issues: system performance, compared with human annotators; the effect of paper type (synthesis or characterization) on system performance; and the effects of domain knowledge features (e.g., a chemical named entity recognition system and list of names of physical quantities) on system performance. We found that overall system performance was 89% in precision and 69% in recall. If we consider identification of terms that intersect with correct terms for the same information category as the correct identification, i.e., loose agreement (in many cases, we can find that appropriate head nouns such as temperature or pressure loosely match between two terms), the overall performance is 95% in precision and 74% in recall. The system performance is almost comparable with results of human annotators for information categories with rich domain knowledge information (source material). However, for other information categories, given the relatively large number of terms that exist only in one paper, recall of individual information categories is not high (39-73%); however, precision is better (75-97%). The average performance for synthesis papers is better than that for characterization papers because of the lack of training examples for characterization papers. Based on these results, we discuss future research plans for improving the performance of the system.

Synthesis and characterization of polypyrrole and its application for solar cell

NASA Astrophysics Data System (ADS)

Almuntaser, Faisal M. A.; Majumder, Sutripto; Baviskar, Prashant K.; Sali, Jaydeep V.; Sankapal, B. R.

2017-08-01

In this report, the fabrication of a solar cell device with the structures FTO/PPy/PTh/ZnO/Al was performed using wet chemical synthesis methods in open environment. The cost-effective methods like CBD, SILAR, and spin coating have been used for the synthesis. The effect of thickness of PPy active layer on the device performance is investigated. Features such as structural, morphological, and chemical bonding of the layers have been investigated using X-ray diffraction, field emission scanning electron microscopy, and Fourier transform infrared spectroscopy and are discussed herein. Effects of PPy thickness on current-voltage characteristics have been studied under dark and illumination at 1 Sun (100 mW/cm2, AM 1.5 G) condition to study the solar cell performance.

Effect of Mesostructured Layer upon Crystalline Properties and Device Performance on Perovskite Solar Cells.

PubMed

Listorti, Andrea; Juarez-Perez, Emilio J; Frontera, Carlos; Roiati, Vittoria; Garcia-Andrade, Laura; Colella, Silvia; Rizzo, Aurora; Ortiz, Pablo; Mora-Sero, Ivan

2015-05-07

One of the most fascinating characteristics of perovskite solar cells (PSCs) is the retrieved obtainment of outstanding photovoltaic (PV) performances withstanding important device configuration variations. Here we have analyzed CH3NH3PbI3-xClx in planar or in mesostructured (MS) configurations, employing both titania and alumina scaffolds, fully infiltrated with perovskite material or presenting an overstanding layer. The use of the MS scaffold induces to the perovskite different structural properties, in terms of grain size, preferential orientation, and unit cell volume, in comparison to the ones of the material grown with no constraints, as we have found out by X-ray diffraction analyses. We have studied the effect of the PSC configuration on photoinduced absorption and time-resolved photoluminescence, complementary techniques that allow studying charge photogeneration and recombination. We have estimated electron diffusion length in the considered configurations observing a decrease when the material is confined in the MS scaffold with respect to a planar architecture. However, the presence of perovskite overlayer allows an overall recovering of long diffusion lengths explaining the record PV performances obtained with a device configuration bearing both the mesostructure and a perovskite overlayer. Our results suggest that performance in devices with perovskite overlayer is mainly ruled by the overlayer, whereas the mesoporous layer influences the contact properties.

Customizing inhaled therapy to meet the needs of COPD patients.

PubMed

Fromer, Leonard; Goodwin, Elizabeth; Walsh, John

2010-03-01

Chronic obstructive pulmonary disease (COPD) is a progressive disease characterized by airflow limitation resulting from emphysema and chronic bronchitis. Inhaled therapy is the major therapeutic approach for treating COPD. Multiple inhaler medications are available in the United States and are delivered by a variety of different devices: metered-dose inhalers, dry powdered inhalers, and nebulizers. Each inhaler device has unique requirements for use that must be correctly performed by the patient for successful drug delivery. Patients with COPD represent a medically diverse population, with each patient having distinct characteristics, such as lung function, comorbidities, cognitive functions, hand strength, and lifestyle. These characteristics impact the patient's ability to properly use specific inhaler devices and therefore affect adherence to therapy, therapeutic outcomes, and quality of life. It is estimated that between 28% to 68% of patients do not use metered-dose inhalers or dry powder inhalers correctly. Worsening symptoms or increased frequency of exacerbations may not always indicate disease progression but may indicate a patient's inability to use their inhaler device properly. This review discusses the patient- and device-specific factors to be considered when choosing an inhaled therapy, which will be concordant with the patient's medical needs, preferences, and lifestyle. The review also considers how the ideas underlying the patient-centered medical home model can be incorporated into the choice and use of inhaler device for a given patient with COPD to improve treatment outcomes.

Design optimization of integrated BiDi triplexer optical filter based on planar lightwave circuit.

PubMed

Xu, Chenglin; Hong, Xiaobin; Huang, Wei-Ping

2006-05-29

Design optimization of a novel integrated bi-directional (BiDi) triplexer filter based on planar lightwave circuit (PLC) for fiber-to-the premise (FTTP) applications is described. A multi-mode interference (MMI) device is used to filter the up-stream 1310nm signal from the down-stream 1490nm and 1555nm signals. An array waveguide grating (AWG) device performs the dense WDM function by further separating the two down-stream signals. The MMI and AWG are built on the same substrate with monolithic integration. The design is validated by simulation, which shows excellent performance in terms of filter spectral characteristics (e.g., bandwidth, cross-talk, etc.) as well as insertion loss.

Design optimization of integrated BiDi triplexer optical filter based on planar lightwave circuit

NASA Astrophysics Data System (ADS)

Xu, Chenglin; Hong, Xiaobin; Huang, Wei-Ping

2006-05-01

Design optimization of a novel integrated bi-directional (BiDi) triplexer filter based on planar lightwave circuit (PLC) for fiber-to-the premise (FTTP) applications is described. A multi-mode interference (MMI) device is used to filter the up-stream 1310nm signal from the down-stream 1490nm and 1555nm signals. An array waveguide grating (AWG) device performs the dense WDM function by further separating the two down-stream signals. The MMI and AWG are built on the same substrate with monolithic integration. The design is validated by simulation, which shows excellent performance in terms of filter spectral characteristics (e.g., bandwidth, cross-talk, etc.) as well as insertion loss.

High-efficiency cell concepts on low-cost silicon sheets

NASA Technical Reports Server (NTRS)

Bell, R. O.; Ravi, K. V.

1985-01-01

The limitations on sheet growth material in terms of the defect structure and minority carrier lifetime are discussed. The effect of various defects on performance are estimated. Given these limitations designs for a sheet growth cell that will make the best of the material characteristics are proposed. Achievement of optimum synergy between base material quality and device processing variables is proposed. A strong coupling exists between material quality and the variables during crystal growth, and device processing variables. Two objectives are outlined: (1) optimization of the coupling for maximum performance at minimal cost; and (2) decoupling of materials from processing by improvement in base material quality to make it less sensitive to processing variables.

TH-CD-201-12: Preliminary Evaluation of Organic Field Effect Transistors as Radiation Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Syme, A; Lin, H; Rubio-Sanchez, J

Purpose: To fabricate organic field effect transistors (OFETs) and evaluate their performance before and after exposure to ionizing radiation. To determine if OFETs have potential to function as radiation dosimeters. Methods: OFETs were fabricated on both Si/SiO{sub 2} wafers and flexible polymer substrates using standard processing techniques. Pentacene was used as the organic semiconductor material and the devices were fabricated in a bottom gate configuration. Devices were irradiated using an orthovoltage treatment unit (120 kVp x-rays). Threshold voltage values were measured with the devices in saturation mode and quantified as a function of cumulative dose. Current-voltage characteristics of the devicesmore » were measured using a Keithley 2614 SourceMeter SMU Instrument. The devices were connected to the reader but unpowered during irradiations. Results: Devices fabricated on Si/SiO2 wafers demonstrated excellent linearity (R{sup 2} > 0.997) with threshold voltages that ranged between 15 and 36 V. Devices fabricated on a flexible polymer substrate had substantially smaller threshold voltages (∼ 4 – 8 V) and slightly worse linearity (R{sup 2} > 0.98). The devices demonstrated excellent stability in I–V characteristics over a large number (>2000) cycles. Conclusion: OFETs have demonstrated excellent potential in radiation dosimetry applications. A key advantage of these devices is their composition, which can be substantially more tissue-equivalent at low photon energies relative to many other types of radiation detector. In addition, fabrication of organic electronics can employ techniques that are faster, simpler and cheaper than conventional silicon-based devices. These results support further development of organic electronic devices for radiation detection purposes. Funding Support, Disclosures, and Conflict of Interest: This work was funded by the Natural Sciences and Engineering Research Council of Canada.« less

Controlling Metastable Native Point-Defect Populations in Cu(In,Ga)Se 2 and Cu 2ZnSnSe 4 Materials and Solar Cells through Voltage-Bias Annealing

DOE PAGES

Teeter, Glenn; Harvey, Steve P.; Johnston, Steve

2017-01-30

Our contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu 2ZnSnSe 4 (CZTSe), Cu(In,Ga)Se 2 (CIGS), and CdS material properties and solar cell performance. In order to quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 degrees C to 215 degrees C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200more » degrees C for CIGS and 110 degrees C-215 degrees C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Our results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including the effects of voltage bias can dramatically alter point-defect-mediated opto-electronic properties of semiconductors. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.« less

Controlling metastable native point-defect populations in Cu(In,Ga)Se2 and Cu2ZnSnSe4 materials and solar cells through voltage-bias annealing

NASA Astrophysics Data System (ADS)

Teeter, G.; Harvey, S. P.; Johnston, S.

2017-01-01

This contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu2ZnSnSe4 (CZTSe), Cu(In,Ga)Se2 (CIGS), and CdS material properties and solar cell performance. To quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 °C to 215 °C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200 °C for CIGS and 110 °C-215 °C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including the effects of voltage bias can dramatically alter point-defect-mediated opto-electronic properties of semiconductors. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.

Controlling Metastable Native Point-Defect Populations in Cu(In,Ga)Se 2 and Cu 2ZnSnSe 4 Materials and Solar Cells through Voltage-Bias Annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teeter, Glenn; Harvey, Steve P.; Johnston, Steve

Our contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu 2ZnSnSe 4 (CZTSe), Cu(In,Ga)Se 2 (CIGS), and CdS material properties and solar cell performance. In order to quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 degrees C to 215 degrees C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200more » degrees C for CIGS and 110 degrees C-215 degrees C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Our results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including the effects of voltage bias can dramatically alter point-defect-mediated opto-electronic properties of semiconductors. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.« less

Large cooling differentials and high heat flux capability with p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2SexTe3-x Superlattice Thermoelectric Devices

NASA Astrophysics Data System (ADS)

Bulman, Gary; Siivola, Ed; Wiitala, Ryan; Grant, Brian; Pierce, Jonathan; Venkatasubramanian, Rama

2007-03-01

Thin film superlattice (SL) based thermoelectric (TE) devices offer the potential for improved efficiency and high heat flux cooling over conventional bulk materials. Recently, we have demonstrated external cooling of 55K and heat pumping capacity of 128 W/cm^2. These high heat fluxes in thin film devices, while attractive for cooling hot-spots in electronics, also make the device performance sensitive to various thermal resistances in the device structure. We will discuss advances in the cooling performance of Bi2Te3-based SL TE devices and describe a method to extract device material parameters, including thermal resistance, from measurements of their δT-I-V characteristics. These parameters will be compared to values obtained through Hall and Seebeck coefficient measurement on epitaxial materials. Results will be presented for both single couple and multi-couple modules, as well as multi-stage cascaded devices made with these materials. Single stage cooling couples with δTmax of 57.8K (Tc˜242K) and multi-stage modules with δTmax˜92.2K (Tc˜209K) have been measured. G.E. Bulman, E. Siivola, B. Shen and R. Venkatasubramanian, Appl. Phys. Lett. 89, 122117 (2006).

Printing an ITO-free flexible poly (4-vinylphenol) resistive switching device

NASA Astrophysics Data System (ADS)

Ali, Junaid; Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Aziz, Shahid; Choi, Kyung Hyun

2018-02-01

Resistive switching in a sandwich structure of silver (Ag)/Polyvinyl phenol (PVP)/carbon nanotube (CNTs)-silver nanowires (AgNWs) coated on a flexible PET substrate is reported in this work. Densely populated networks of one dimensional nano materials (1DNM), CNTs-AgNWs have been used as the conductive bottom electrode with the prominent features of high flexibility and low sheet resistance of 90 Ω/sq. Thin, yet uniform active layer of PVP was deposited on top of the spin coated 1DNM thin film through state of the art printing technique of electrohydrodynamic atomization (EHDA) with an average thickness of 170 ± 28 nm. Ag dots with an active area of ∼0.1 mm2 were deposited through roll to plate printing system as the top electrodes to complete the device fabrication of flexible memory device. Our memory device exhibited suitable electrical characteristics with OFF/ON ratio of 100:1, retention time of 60 min and electrical endurance for 100 voltage sweeps without any noticeable decay in performance. The resistive switching characteristics at a low current compliance of 3 nA were also evaluated for the application of low power consumption. This memory device is flexible and can sustain more than 100 bending cycles at a bending diameter of 2 cm with stable HRS and LRS values. Our proposed device shows promise to be used as a future potential nonvolatile memory device in flexible electronics.

Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Lee, Seungwoon; Jeong, Jaewook

2017-08-01

In this paper, the annealing effect of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs), under ambient He (He-device), is systematically analyzed by comparison with those under ambient O2 (O2-device) and N2 (N2-device), respectively. The He-device shows high field-effect mobility and low subthreshold slope owing to the minimization of the ambient effect. The degradation of the O2- and N2-device performances originate from their respective deep acceptor-like and shallow donor-like characteristics, which can be verified by comparison with the He-device. However, the three devices show similar threshold voltage instability under prolonged positive bias stress due to the effect of excess oxygen. Therefore, annealing in ambient He is the most suitable method for the fabrication of reference TFTs to study the various effects of the ambient during the annealing process in solution-processed a-IGZO TFTs.

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean -Christophe

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grownmore » on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. Here, these results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices.« less

Compressive sensing scalp EEG signals: implementations and practical performance.

PubMed

Abdulghani, Amir M; Casson, Alexander J; Rodriguez-Villegas, Esther

2012-11-01

Highly miniaturised, wearable computing and communication systems allow unobtrusive, convenient and long term monitoring of a range of physiological parameters. For long term operation from the physically smallest batteries, the average power consumption of a wearable device must be very low. It is well known that the overall power consumption of these devices can be reduced by the inclusion of low power consumption, real-time compression of the raw physiological data in the wearable device itself. Compressive sensing is a new paradigm for providing data compression: it has shown significant promise in fields such as MRI; and is potentially suitable for use in wearable computing systems as the compression process required in the wearable device has a low computational complexity. However, the practical performance very much depends on the characteristics of the signal being sensed. As such the utility of the technique cannot be extrapolated from one application to another. Long term electroencephalography (EEG) is a fundamental tool for the investigation of neurological disorders and is increasingly used in many non-medical applications, such as brain-computer interfaces. This article investigates in detail the practical performance of different implementations of the compressive sensing theory when applied to scalp EEG signals.

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide.

PubMed

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean-Christophe; Liu, Fangze; Stoumpos, Costas C; Traore, Boubacar; Kepenekian, Mikael; Durand, Olivier; Katan, Claudine; Tretiak, Sergei; Crochet, Jared; Ajayan, Pulickel M; Kanatzidis, MercouriG; Even, Jacky; Mohite, Aditya D

2018-02-01

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grown on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. These results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Critical Role of Interface and Crystallinity on the Performance and Photostability of Perovskite Solar Cell on Nickel Oxide

DOE PAGES

Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean -Christophe; ...

2017-12-11

Hybrid perovskites are on a trajectory toward realizing the most efficient single-junction, solution-processed photovoltaic devices. However, a critical issue is the limited understanding of the correlation between the degree of crystallinity and the emergent perovskite/hole (or electron) transport layer on device performance and photostability. Here, the controlled growth of hybrid perovskites on nickel oxide (NiO) is shown, resulting in the formation of thin films with enhanced crystallinity with characteristic peak width and splitting reminiscent of the tetragonal phase in single crystals. Photophysical and interface sensitive measurements reveal a reduced trap density at the perovskite/NiO interface in comparison with perovskites grownmore » on poly(3,4-ethylene dioxy thiophene) polystyrene sulfonate. Photovoltaic cells exhibit a high open circuit voltage (1.12 V), indicating a near-ideal energy band alignment. Moreover, photostability of photovoltaic devices up to 10-Suns is observed, which is a direct result of the superior crystallinity of perovskite thin films on NiO. Here, these results elucidate the critical role of the quality of the perovskite/hole transport layer interface in rendering high-performance and photostable optoelectronic devices.« less

Mechanical Properties of Organic Semiconductors for Stretchable, Highly Flexible, and Mechanically Robust Electronics.

PubMed

Root, Samuel E; Savagatrup, Suchol; Printz, Adam D; Rodriquez, Daniel; Lipomi, Darren J

2017-05-10

Mechanical deformability underpins many of the advantages of organic semiconductors. The mechanical properties of these materials are, however, diverse, and the molecular characteristics that permit charge transport can render the materials stiff and brittle. This review is a comprehensive description of the molecular and morphological parameters that govern the mechanical properties of organic semiconductors. Particular attention is paid to ways in which mechanical deformability and electronic performance can coexist. The review begins with a discussion of flexible and stretchable devices of all types, and in particular the unique characteristics of organic semiconductors. It then discusses the mechanical properties most relevant to deformable devices. In particular, it describes how low modulus, good adhesion, and absolute extensibility prior to fracture enable robust performance, along with mechanical "imperceptibility" if worn on the skin. A description of techniques of metrology precedes a discussion of the mechanical properties of three classes of organic semiconductors: π-conjugated polymers, small molecules, and composites. The discussion of each class of materials focuses on molecular structure and how this structure (and postdeposition processing) influences the solid-state packing structure and thus the mechanical properties. The review concludes with applications of organic semiconductor devices in which every component is intrinsically stretchable or highly flexible.

Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism

NASA Astrophysics Data System (ADS)

Martino, Marcio Dalla Valle; Neves, Felipe; Ghedini Der Agopian, Paula; Martino, João Antonio; Vandooren, Anne; Rooyackers, Rita; Simoen, Eddy; Thean, Aaron; Claeys, Cor

2015-10-01

The goal of this work is to study the analog performance of tunnel field effect transistors (TFETs) and its susceptibility to temperature variation and to different dominant transport mechanisms. The experimental input characteristic of nanowire TFETs with different source compositions (100% Si and Si1-xGex) has been presented, leading to the extraction of the Activation Energy for each bias condition. These first results have been connected to the prevailing transport mechanism for each configuration, namely band-to-band tunneling (BTBT) or trap assisted tunneling (TAT). Afterward, this work analyzes the analog behavior, with the intrinsic voltage gain calculated in terms of Early voltage, transistor efficiency, transconductance and output conductance. Comparing the results for devices with different source compositions, it is interesting to note how the analog trends vary depending on the source characteristics and the prevailing transport mechanisms. This behavior results in a different suitability analysis depending on the working temperature. In other words, devices with full-Silicon source and non-abrupt junction profile present the worst intrinsic voltage gain at room temperature, but the best results for high temperatures. This was possible since, among the 4 studied devices, this configuration was the only one with a positive intrinsic voltage gain dependence on the temperature variation.

Structural complexities in the active layers of organic electronics.

PubMed

Lee, Stephanie S; Loo, Yueh-Lin

2010-01-01

The field of organic electronics has progressed rapidly in recent years. However, understanding the direct structure-function relationships between the morphology in electrically active layers and the performance of devices composed of these materials has proven difficult. The morphology of active layers in organic electronics is inherently complex, with heterogeneities existing across multiple length scales, from subnanometer to micron and millimeter range. A major challenge still facing the organic electronics community is understanding how the morphology across all of the length scales in active layers collectively determines the device performance of organic electronics. In this review we highlight experiments that have contributed to the elucidation of structure-function relationships in organic electronics and also point to areas in which knowledge of such relationships is still lacking. Such knowledge will lead to the ability to select active materials on the basis of their inherent properties for the fabrication of devices with prespecified characteristics.

Piezoelectric actuator design for MR elastography: implementation and vibration issues.

PubMed

Tse, Zion Tsz Ho; Chan, Yum Ji; Janssen, Henning; Hamed, Abbi; Young, Ian; Lamperth, Michael

2011-09-01

MR elastography (MRE) is an emerging technique for tumor diagnosis. MRE actuation devices require precise mechanical design and radiofrequency engineering to achieve the required mechanical vibration performance and MR compatibility. A method of designing a general-purpose, compact and inexpensive MRE actuator is presented. It comprises piezoelectric bimorphs arranged in a resonant structure designed to operate at its resonant frequency for maximum vibration amplitude. An analytical model was established to understand the device vibration characteristics. The model-predicted performance was validated in experiments, showing its accuracy in predicting the actuator resonant frequency with an error < 4%. The device MRI compatibility was shown to cause minimal interference to a 1.5 tesla MRI scanner, with maximum signal-to-noise ratio reduction of 7.8% and generated artefact of 7.9 mm in MR images. A piezoelectric MRE actuator is proposed, and its implementation, vibration issues and future work are discussed. Copyright © 2011 John Wiley & Sons, Ltd.

Evaluation of the SeedCounter, A Mobile Application for Grain Phenotyping.

PubMed

Komyshev, Evgenii; Genaev, Mikhail; Afonnikov, Dmitry

2016-01-01

Grain morphometry in cereals is an important step in selecting new high-yielding plants. Manual assessment of parameters such as the number of grains per ear and grain size is laborious. One solution to this problem is image-based analysis that can be performed using a desktop PC. Furthermore, the effectiveness of analysis performed in the field can be improved through the use of mobile devices. In this paper, we propose a method for the automated evaluation of phenotypic parameters of grains using mobile devices running the Android operational system. The experimental results show that this approach is efficient and sufficiently accurate for the large-scale analysis of phenotypic characteristics in wheat grains. Evaluation of our application under six different lighting conditions and three mobile devices demonstrated that the lighting of the paper has significant influence on the accuracy of our method, unlike the smartphone type.

Undulator performance on PEP storage ring with different optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shenoy, G.K.; Viccaro, P.J.; Alp, E.E.

1987-12-01

Our ability to profitably utilize the radiation from undulators proposed for PEP is determined by their performance in the different operating modes and by whether the design tolerance required for acceptable operation of the device can be met with available technology. The purpose of this paper is to provide spectral characteristics for some typical devices calculated using a Monte-Carlo algorithm in which the Lienard-Wiechert potential is integrated over the trajectory of the charged particle along the undulator length. The actual emittance of the particle beam for the various PEP operating modes are included explicitly in the simulations. In addition, wemore » have carried out a single partial analysis of the effects of undulator magnetic field errors on the spectral properties in order to estimate the design tolerance requirements necessary for devices which have been proposed PEP. 6 figs.« less

Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor.

PubMed

Mills, Edmund M; Min, Bok Ki; Kim, Seong K; Kim, Seong Jun; Kang, Min-A; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok; Jung, Jongwan; Kim, Sangtae

2015-08-26

Graphene barristors are a novel type of electronic switching device with excellent performance, which surpass the low on-off ratios that limit the operation of conventional graphene transistors. In barristors, a gate bias is used to vary graphene's Fermi level, which in turn controls the height and resistance of a Schottky barrier at a graphene/semiconductor heterojunction. Here we demonstrate that the switching characteristic of a thin-film ZnO/graphene device with simple geometry results from tunneling current across the Schottky barriers formed at the ZnO/graphene heterojunctions. Direct characterization of the current-voltage-temperature relationship of the heterojunctions by ac-impedance spectroscopy reveals that this relationship is controlled predominantly by field emission, unlike most graphene barristors in which thermionic emission is observed. This governing mechanism makes the device unique among graphene barristors, while also having the advantages of simple fabrication and outstanding performance.

"Genetically Engineered" Nanoelectronics

NASA Technical Reports Server (NTRS)

Klimeck, Gerhard; Salazar-Lazaro, Carlos H.; Stoica, Adrian; Cwik, Thomas

2000-01-01

The quantum mechanical functionality of nanoelectronic devices such as resonant tunneling diodes (RTDs), quantum well infrared-photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs) is enabled by material variations on an atomic scale. The design and optimization of such devices requires a fundamental understanding of electron transport in such dimensions. The Nanoelectronic Modeling Tool (NEMO) is a general-purpose quantum device design and analysis tool based on a fundamental non-equilibrium electron transport theory. NEW was combined with a parallelized genetic algorithm package (PGAPACK) to evolve structural and material parameters to match a desired set of experimental data. A numerical experiment that evolves structural variations such as layer widths and doping concentrations is performed to analyze an experimental current voltage characteristic. The genetic algorithm is found to drive the NEMO simulation parameters close to the experimentally prescribed layer thicknesses and doping profiles. With such a quantitative agreement between theory and experiment design synthesis can be performed.

Development of non-volatile semiconductor memory

NASA Technical Reports Server (NTRS)

Heikkila, W. W.

1979-01-01

A 256 word by 8-bit random access memory chip was developed utilizing p channel, metal gate metal-nitride-oxide-silicon (MNOS) technology; with operational characteristics of a 2.5 microsecond read cycle, a 6.0 microsecond write cycle, 800 milliwatts of power dissipation; and retention characteristics of 10 to the 8th power read cycles before data refresh and 5000 hours of no power retention. Design changes were implemented to reduce switching currents that caused parasitic bipolar transistors inherent in the MNOS structure to turn on. Final wafer runs exhibited acceptable yields for a die 250 mils on a side. Evaluation testing was performed on the device in order to determine the maturity of the device. A fixed gate breakdown mechanism was found when operated continuously at high temperature.

Performance of carbon-carbon supercapacitors based on organic, aqueous and ionic liquid electrolytes

NASA Astrophysics Data System (ADS)

Lewandowski, Andrzej; Olejniczak, Angelika; Galinski, Maciej; Stepniak, Izabela

Properties of capacitors working with the same carbon electrodes (activated carbon cloth) and three types of electrolytes: aqueous, organic and ionic liquids were compared. Capacitors filled with ionic liquids worked at a potential difference of 3.5 V, their solutions in AN and PC were charged up to the potential difference of 3 V, classical organic systems to 2.5 V and aqueous to 1 V. Cyclic voltammetry, galvanostatic charging/discharging and impedance spectroscopy were used to characterize these capacitors. The highest specific energy was recorded for the device working with ionic liquids, while the highest power is characteristic for the device filled with aqueous H 2SO 4 electrolyte. Aqueous electrolytes led to energy density an order of magnitude lower in comparison to that characteristic of ionic liquids.

Morphological study of electrophoretically deposited TiO2 film for DSSC application

NASA Astrophysics Data System (ADS)

Patel, Alkesh B.; Patel, K. D.; Soni, S. S.; Sonigara, K. K.

2018-05-01

In the immerging field of eco-friendly and low cost photovoltaic devices, dye sensitized solar cell (DSSC) [1] has been investigated as promising alternative to the conventional silicon-based solar cells. In the DSSC device, photoanode is crucial component that take charge of holding sensitizer on it and inject the electrons from the sensitizer to current collector. Nanoporous TiO2 is the most relevant candidate for the preparation of photoanode in DSSCs. Surface properties, morphology, porosity and thickness of TiO2 film as well as preparation technique determine the performance of device. In the present work we have report the study of an effect of nanoporous anatase titanium dioxide (TiO2) film thickness on DSSC performance. Photoanode TiO2 (P25) film was deposited on conducting substrate by electrophoresis technique (EPD) and film thickness was controlled during deposition by applying different current density for a constant time interval. Thickness and surface morphology of prepared films was studied by SEM and transmittance analysis. The same set of photoanode was utilized in DSSC devices using metal free organic dye sensitizer to evaluate the photovoltaic performance. Devices were characterized through Current-Voltage (I-V) characteristic, electrochemical impedance spectroscopy (EIS) and open circuit voltage decay curves. Dependency of device performance corresponding to TiO2 film thickness is investigated through the lifetime kinetics of electron charge transfer mechanism trough impedance fitting. It is concluded that appropriate thickness along with uniformity and porosity are required to align the dye molecules to respond efficiently the incident light photons.

Theoretical and experimental investigation of the nonlinear dynamical trends of passively mode-locked quantum dot lasers

NASA Astrophysics Data System (ADS)

Raghunathan, Ravi

In recent years, passively mode-locked quantum dot lasers have shown great promise as compact, efficient and reliable pulsed sources of light for a range of precision and high performance applications, such as high bit-rate optical communications, diverse waveform generation, metrology, and clock distribution in high-performance computing (HPC) processors. For such applications, stable optical pulses with short picosecond pulse durations and multi-gigahertz repetition rates are required. In addition, a low pulse-to-pulse timing jitter is also necessary to prevent errors arising from the ambiguity between neighboring pulses. In order to optimize pulse quality in terms of optical characteristics such as pulse shape and pulse train behavior, as well as RF characteristics such as phase noise and timing jitter, understanding the nonlinear output dynamics of such devices is of critical importance, not only to get a sense of the regimes of operation where device output might be stable or unstable, but also to gain insight into the parameters that influence the output characteristics the most, and how they can be accessed and exploited to optimize design and performance for next generation applications. In this dissertation, theoretical and experimental studies have been combined to investigate the dynamical trends of two-section passively mode-locked quantum dot lasers. On the theoretical side, a novel numerical modeling scheme is presented as a powerful and versatile framework to study the nonlinear dynamics specific to a device, with device-specific parameters extracted over a range of operating conditions. The practical utility of this scheme is then demonstrated, first, in an analytical capability to interpret and explain dynamical trends observed in experiment, and subsequently, as a predictive tool to guide experiment to operate in a desired dynamical regime. Modeling results are compared to experimental findings where possible. Finally, optical feedback from an external reflector is experimentally studied as an additional control mechanism over the output dynamics of the device, and shown to enable invaluable insight into the behavior of the RF and optical spectra of the output. Together, the theoretical and experimental findings of this dissertation are shown to offer a systematic approach to understand, control and exploit the dynamical trends of passively mode-locked two-section quantum dot lasers.

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

2004-01-01

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Radiative Cooling: Principles, Progress, and Potentials

PubMed Central

Hossain, Md. Muntasir

2016-01-01

The recent progress on radiative cooling reveals its potential for applications in highly efficient passive cooling. This approach utilizes the maximized emission of infrared thermal radiation through the atmospheric window for releasing heat and minimized absorption of incoming atmospheric radiation. These simultaneous processes can lead to a device temperature substantially below the ambient temperature. Although the application of radiative cooling for nighttime cooling was demonstrated a few decades ago, significant cooling under direct sunlight has been achieved only recently, indicating its potential as a practical passive cooler during the day. In this article, the basic principles of radiative cooling and its performance characteristics for nonradiative contributions, solar radiation, and atmospheric conditions are discussed. The recent advancements over the traditional approaches and their material and structural characteristics are outlined. The key characteristics of the thermal radiators and solar reflectors of the current state‐of‐the‐art radiative coolers are evaluated and their benchmarks are remarked for the peak cooling ability. The scopes for further improvements on radiative cooling efficiency for optimized device characteristics are also theoretically estimated. PMID:27812478

Analysis and optimisation of lateral thin-film silicon-on-insulator (SOI) PMOS transistor with an NBL layer in the drift region

NASA Astrophysics Data System (ADS)

Cortés, I.; Toulon, G.; Morancho, F.; Flores, D.; Hugonnard-Bruyère, E.; Villard, B.

2012-04-01

This paper analyses the experimental results of voltage capability (VBR > 120 V) and output characteristics of a new lateral power P-channel MOS transistors manufactured on a 0.18 μm SOI CMOS technology by means of TCAD numerical simulations. The proposed LDPMOS structures have an N-type buried layer (NBL) inserted in the P-well drift region with the purpose of increasing the RESURF effectiveness and improving the static characteristics (Ron-sp/VBR trade-off) and the device switching performance. Some architecture modifications are also proposed in this paper to further improve the performance of fabricated transistors.

Making Sense of Multitasking: Key Behaviours

ERIC Educational Resources Information Center

Judd, Terry

2013-01-01

Traditionally viewed as a positive characteristic, there is mounting evidence that multitasking using digital devices can have a range of negative impacts on task performance and learning. While the cognitive processes that cause these impacts are starting to be understood and the evidence that they occur in real learning contexts is mounting, the…

Orderedness and Stratificational "and" Nodes.

ERIC Educational Resources Information Center

Herrick, Earl M.

It is possible to apply Lamb's stratificational theory and analysis to English graphonomy, but additional notation devices must be used to explain particular graphemes and their characteristics. The author presents cases where Lamb's notation is inadequate. In those cases, he devises new means for performing the analysis. The result of this…

Lithium batteries. (Latest citations from the COMPENDEX database). Published Search

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1993-05-01

The bibliography contains citations concerning the design, development, and applications of lithium batteries. Topics include electrochemical aspects, cycling characteristics, performance evaluations, and applications in cardiac pacemaker devices. Batteries using organic compounds, chlorides, and metal sulfides are discussed. (Contains 250 citations and includes a subject term index and title list.)

In-line task 57: Component evaluation. [of circuit breakers, panel switches, etc. for space shuttle

NASA Technical Reports Server (NTRS)

Boykin, J. C.

1974-01-01

Design analysis tests were performed on selected power switching components to determine the possible applicability of off-the-shelf hardware to space shuttles. Various characteristics were also evaluated in those devices to determine the most desirable properties for the space shuttle.

Application of an inline dry powder inhaler to deliver high dose pharmaceutical aerosols during low flow nasal cannula therapy.

PubMed

Farkas, Dale; Hindle, Michael; Longest, P Worth

2018-05-05

Inline dry powder inhalers (DPIs) offer a potentially effective option to deliver high dose inhaled medications simultaneously with mechanical ventilation. The objective of this study was to develop an inline DPI that is actuated using a low volume of air (LV-DPI) to efficiently deliver pharmaceutical aerosols during low flow nasal cannula (LFNC) therapy. A characteristic feature of the new inline LV-DPIs was the use of hollow capillary tubes that both pierced the capsule and provided a pathway for inlet air and exiting aerosol. Aerosolization characteristics, LFNC depositional losses and emitted dose (ED) were determined using 10 mg powder masses of a small-particle excipient enhanced growth (EEG) formulation. While increasing the number of inlet capillaries from one to three did not improve performance, retracting the inlet and outlet capillaries did improve ED by over 30%. It was theorized that high quality performance requires both high turbulent energy to deaggregate the powder and high wall shear stresses to minimize capsule retention. Best case performance included a device ED of approximately 85% (of loaded dose) and device emitted mass median aerodynamic diameter of 1.77 µm. Maximum ED through the LFNC system and small diameter (4 mm) nasal cannula was approximately 65% of the loaded dose. Potential applications of this device include the delivery of high dose inhaled medications such as surfactants, antibiotics, mucolytics, and anti-inflammatories. Copyright © 2018 Elsevier B.V. All rights reserved.

Carbon nanotubes and graphene towards soft electronics

NASA Astrophysics Data System (ADS)

Chae, Sang Hoon; Lee, Young Hee

2014-04-01

Although silicon technology has been the main driving force for miniaturizing device dimensions to improve cost and performance, the current application of Si to soft electronics (flexible and stretchable electronics) is limited due to material rigidity. As a result, various prospective materials have been proposed to overcome the rigidity of conventional Si technology. In particular, nano-carbon materials such as carbon nanotubes (CNTs) and graphene are promising due to outstanding elastic properties as well as an excellent combination of electronic, optoelectronic, and thermal properties compared to conventional rigid silicon. The uniqueness of these nano-carbon materials has opened new possibilities for soft electronics, which is another technological trend in the market. This review covers the recent progress of soft electronics research based on CNTs and graphene. We discuss the strategies for soft electronics with nano-carbon materials and their preparation methods (growth and transfer techniques) to devices as well as the electrical characteristics of transparent conducting films (transparency and sheet resistance) and device performances in field effect transistor (FET) (structure, carrier type, on/off ratio, and mobility). In addition to discussing state of the art performance metrics, we also attempt to clarify trade-off issues and methods to control the trade-off on/off versus mobility). We further demonstrate accomplishments of the CNT network in flexible integrated circuits on plastic substrates that have attractive characteristics. A future research direction is also proposed to overcome current technological obstacles necessary to realize commercially feasible soft electronics.

Carbon nanotubes and graphene towards soft electronics.

PubMed

Chae, Sang Hoon; Lee, Young Hee

2014-01-01

Although silicon technology has been the main driving force for miniaturizing device dimensions to improve cost and performance, the current application of Si to soft electronics (flexible and stretchable electronics) is limited due to material rigidity. As a result, various prospective materials have been proposed to overcome the rigidity of conventional Si technology. In particular, nano-carbon materials such as carbon nanotubes (CNTs) and graphene are promising due to outstanding elastic properties as well as an excellent combination of electronic, optoelectronic, and thermal properties compared to conventional rigid silicon. The uniqueness of these nano-carbon materials has opened new possibilities for soft electronics, which is another technological trend in the market. This review covers the recent progress of soft electronics research based on CNTs and graphene. We discuss the strategies for soft electronics with nano-carbon materials and their preparation methods (growth and transfer techniques) to devices as well as the electrical characteristics of transparent conducting films (transparency and sheet resistance) and device performances in field effect transistor (FET) (structure, carrier type, on/off ratio, and mobility). In addition to discussing state of the art performance metrics, we also attempt to clarify trade-off issues and methods to control the trade-off on/off versus mobility). We further demonstrate accomplishments of the CNT network in flexible integrated circuits on plastic substrates that have attractive characteristics. A future research direction is also proposed to overcome current technological obstacles necessary to realize commercially feasible soft electronics.

Effect of sputtering atmosphere on the characteristics of ZrOx resistive switching memory

NASA Astrophysics Data System (ADS)

He, Pin; Ye, Cong; Wu, Jiaji; Wei, Wei; Wei, Xiaodi; Wang, Hao; Zhang, Rulin; Zhang, Li; Xia, Qing; Wang, Hanbin

2017-05-01

A ZrOx switching layer with different oxygen content for TiN/ZrOx/Pt resistive switching (RS) memory was prepared by magnetron sputtering in different atmospheres such as N2/Ar mixture, O2/Ar mixture as well as pure Ar. The morphology, structure and RS characteristics were systemically investigated and it was found that the RS performance is highly dependent on the sputtering atmosphere. For the memory device sputtered in N2/Ar mixture, with 8.06% nitrogen content in the ZrOx switching layer, the highest uniformity with smallest distribution of V set and high resistance states (HRS)/low resistance states (LRS) values were achieved. By analyzing the current conduction mechanisms combined with possible RS mechanisms for three devices, we deduce that for the device with a ZrOx layer sputtered in N2/Ar mixture, oxygen ions (O2-), which are decisive to the disruption/formation of the conductive filament, will gather around the tip of the filament due to the existence of doping nitrogen, and lead to the reduction of O2- migration randomness in the operation process, so that the uniformity of the N-doped ZrOx device can be improved.

High power microwave source with a three dimensional printed metamaterial slow-wave structure.

PubMed

French, David M; Shiffler, Don

2016-05-01

For over the last decade, the concept of metamaterials has led to new approaches for considering the interaction of radiation with complex structures. However, practical manifestations of such a device operating at high power densities have proven difficult to achieve due to the resonant nature of metamaterials and the resultant high electric fields, which place severe constraints on manufacturing the slow wave structures. In this paper, we describe the first experimental manifestation of a high power microwave device utilizing a metallic slow wave structure (metamaterial-like) fabricated using additive manufacturing. The feasibility of utilizing additive manufacturing as a technique for building these relatively complicated structures has thus been demonstrated. The MW class microwave source operates in the C-band and shows frequency tunablility with electron beam voltage. The basic electromagnetic characteristics of this device, the construction using additive manufacturing, and the basic performance as a microwave oscillator are considered. Due to the tunable nature of the device, it shows promise not only as an oscillator but also as a microwave amplifier. Therefore, the dispersive characteristics and a discussion of the anticipated gain is included as it relates to an amplifier configuration.

Patterning Method for Silver Nanoparticle Electrodes in Fully Solution-Processed Organic Thin-Film Transistors Using Selectively Treated Hydrophilic and Hydrophobic Surfaces

NASA Astrophysics Data System (ADS)

Fukuda, Kenjiro; Takeda, Yasunori; Kobayashi, Yu; Shimizu, Masahiro; Sekine, Tomohito; Kumaki, Daisuke; Kurihara, Masato; Sakamoto, Masatomi; Tokito, Shizuo

2013-05-01

Fully solution-processed organic thin-film transistor (OTFT) devices have been fabricated with simple patterning process at a relatively low process temperature of 100 °C. In the patterning process, a hydrophobic amorphous fluoropolymer material, which was used as the gate dielectric layer and the underlying base layer, was treated with an oxygen plasma to selectively change its surface wetting properties from hydrophobic to hydrophilic. Silver source and drain electrodes were successfully formed in the treated areas with highly uniform line widths and without residues between the electrodes. Nonuniformities in the thickness of the silver electrodes originating from the “coffee-ring” effect were suppressed by optimizing the blend of solvents used with the silver nanoparticles, such that the printed electrodes are appropriate for bottom-gate OTFT devices. A fully solution-processed OTFT device using a polymer semiconductor material (PB16TTT) exhibited good electrical performance with no hysteresis in its transfer characteristics and with good linearity in its output characteristics. A relatively high carrier mobility of 0.14 cm2 V-1 s-1 and an on/off ratio of 1×105 were obtained with the fabricated TFT device.

State of the art of fine patterned Si TFT

NASA Astrophysics Data System (ADS)

Noguchi, Takashi

2003-05-01

Performance and relating subject for fine patterned Si TFT (Thin Film Transistor) are reviewed and discussed from a viewpoint of device and/or fabrication process based on reported results. Poly-Si TFTs fabricated on glass using low-temperature process are studied extensively for the application to LCD (Liquid Crystal Display) or OLED (Organic Light Emitting Diode) Display. Currently, the research target for the TFT application is emphasized on the highly functional system on glass or the display on flexible substrate by adopting an effective crystallizing technique of SPC (Solid Phase Crystallization) or ELC (Excimer Laser Crystallization). Improvement of device characteristics such as an enhancement of carrier mobility has been studied intensively by enlarging the grain size. Reduction of the voltage and shrinkage of the device size are the trend of Si LSI, which arise a peculiar issue of uniformity or an anisotropy problem for the device characteristics in the large grained poly-Si film. Some trial approaches for solving the issues such as nucleation control for the grain growth or lateral grain growth are proposed, so far. By overcoming the issues, coming SOP (System on Panel) era using the Si TFTs is expected.

Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices

NASA Astrophysics Data System (ADS)

Liu, Sen; Zhao, Xiaolong; Li, Qingjiang; Li, Nan; Wang, Wei; Liu, Qi; Xu, Hui

2016-12-01

Metal oxide-based electrochemical metallization memory (ECM) shows promising performance for next generation non-volatile memory. The negative-SET behavior has been observed in various oxide-based ECM devices. But the underlying mechanism of this behavior remains unaddressed and the role of the metal cation and oxygen vacancy in this behavior is unclear. In this work, we have observed two kinds of negative-SET (labeled as N-SET1 and N-SET2) behaviors in our Cu/ZrO2/Pt devices. Both the two behaviors can result in hard breakdown due to the high compliance current in reset process. The I-V characteristic shows that the two negative-SET behaviors have an obvious difference in operation voltage. Using four-probe resistance measurement method, the resistance-temperature characteristics of the ON-state after various negative-SET behaviors have been studied. The temperature dependence results demonstrate that the N-SET1 behavior is dominated by Cu conductive filament (CF) reformation caused by the Cu CF overgrowth phenomenon while the N-SET2 is related to the formation of oxygen vacancy CF. This work may provide a comprehensive understanding of the switching mechanism in oxide-based ECM devices.

High power microwave source with a three dimensional printed metamaterial slow-wave structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

French, David M.; Shiffler, Don

2016-05-15

For over the last decade, the concept of metamaterials has led to new approaches for considering the interaction of radiation with complex structures. However, practical manifestations of such a device operating at high power densities have proven difficult to achieve due to the resonant nature of metamaterials and the resultant high electric fields, which place severe constraints on manufacturing the slow wave structures. In this paper, we describe the first experimental manifestation of a high power microwave device utilizing a metallic slow wave structure (metamaterial-like) fabricated using additive manufacturing. The feasibility of utilizing additive manufacturing as a technique for buildingmore » these relatively complicated structures has thus been demonstrated. The MW class microwave source operates in the C-band and shows frequency tunablility with electron beam voltage. The basic electromagnetic characteristics of this device, the construction using additive manufacturing, and the basic performance as a microwave oscillator are considered. Due to the tunable nature of the device, it shows promise not only as an oscillator but also as a microwave amplifier. Therefore, the dispersive characteristics and a discussion of the anticipated gain is included as it relates to an amplifier configuration.« less

On the Properties and Design of Organic Light-Emitting Devices

NASA Astrophysics Data System (ADS)

Erickson, Nicholas C.

Organic light-emitting devices (OLEDs) are attractive for use in next-generation display and lighting technologies. In display applications, OLEDs offer a wide emission color gamut, compatibility with flexible substrates, and high power efficiencies. In lighting applications, OLEDs offer attractive features such as broadband emission, high-performance, and potential compatibility with low-cost manufacturing methods. Despite recent demonstrations of near unity internal quantum efficiencies (photons out per electron in), OLED adoption lags conventional technologies, particularly in large-area displays and general lighting applications. This thesis seeks to understand the optical and electronic properties of OLED materials and device architectures which lead to not only high peak efficiency, but also reduced device complexity, high efficiency under high excitation, and optimal white-light emission. This is accomplished through the careful manipulation of organic thin film compositions fabricated via vacuum thermal evaporation, and the introduction of a novel device architecture, the graded-emissive layer (G-EML). This device architecture offers a unique platform to study the electronic properties of varying compositions of organic semiconductors and the resulting device performance. This thesis also introduces an experimental technique to measure the spatial overlap of electrons and holes within an OLED's emissive layer. This overlap is an important parameter which is affected by the choice of materials and device design, and greatly impacts the operation of the OLED at high excitation densities. Using the G-EML device architecture, OLEDs with improved efficiency characteristics are demonstrated, achieving simultaneously high brightness and high efficiency.

Planar-Processed Polymer Transistors.

PubMed

Xu, Yong; Sun, Huabin; Shin, Eul-Yong; Lin, Yen-Fu; Li, Wenwu; Noh, Yong-Young

2016-10-01

Planar-processed polymer transistors are proposed where the effective charge injection and the split unipolar charge transport are all on the top surface of the polymer film, showing ideal device characteristics with unparalleled performance. This technique provides a great solution to the problem of fabrication limitations, the ambiguous operating principle, and the performance improvements in practical applications of conjugated-polymer transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey, Steven P.; Johnston, Steve; Teeter, Glenn

2016-11-21

We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ~1014 cm-3 to ~1017 cm-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findingsmore » in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.« less

Design of precise assembly equipment of large aperture optics

NASA Astrophysics Data System (ADS)

Pei, Guoqing; Xu, Xu; Xiong, Zhao; Yan, Han; Qin, Tinghai; Zhou, Hai; Yuan, Xiaodong

2017-05-01

High-energy solid-state laser is an important way to achieve laser fusion research. Laser fusion facility includes thousands of various types of large aperture optics. These large aperture optics should be assembled with high precision and high efficiency. Currently, however, the assembly of large aperture optics is by man's hand which is in low level of efficiency and labor-intensive. Here, according to the characteristics of the assembly of large aperture optics, we designed three kinds of grasping devices. Using Finite Element Method, we simulated the impact of the grasping device on the PV value and the RMS value of the large aperture optics. The structural strength of the grasping device's key part was analyzed. An experiment was performed to illustrate the reliability and precision of the grasping device. We anticipate that the grasping device would complete the assembly of large aperture optics precisely and efficiently.

Dopant atoms as quantum components in silicon nanoscale devices

NASA Astrophysics Data System (ADS)

Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua

2018-06-01

Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).

Effect of Weight on the Resonant Tuning of Energy Harvesting Devices Using Giant Magnetostrictive Materials.

PubMed

Mori, Kotaro; Horibe, Tadashi; Ishikawa, Shigekazu

2018-04-10

This study deals with the numerical and experimental study of the effect of weight on the resonant tuning and energy harvesting characteristics of energy harvesting devices using giant magnetostrictive materials. The energy harvesting device is made in a cantilever shape using a thin Terfenol-D layer, stainless steel (SUS) layer and a movable proof mass, among other things. In this study, two types of movable proof mass were prepared, and the device was designed to adjust its own resonant frequency automatically to match external vibration frequency in real time. Three-dimensional finite element analysis (FEA) was performed, and the resonant frequency, tip displacement, and output voltage in the devices were predicted and measured, and the simulation and experiment results were compared. The effects of the weight of the proof mass on self-tuning ability and time-varying behavior were then considered in particular.

An overview of silicon carbide device technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Matus, Lawrence G.

1992-01-01

Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.

The plasmatron: Advanced mode thermionic energy conversion

NASA Technical Reports Server (NTRS)

Hansen, L. K.; Hatch, G. L.; Rasor, N. S.

1976-01-01

A theory of the plasmatron was developed. Also, a wide range of measurements were obtained with two versatile, research devices. To gain insight into plasmatron performance, the experimental results are compared with calculations based on the theoretical model of plasmatron operation. Results are presented which show that the plasma arc drop of the conventional arc (ignited) mode converter can be suppressed by use of an auxiliary ion source. The improved performance, however, is presently limited to low current densities because of voltage losses due to plasma resistance. This resistance loss could be suppressed by an increase in the plasma electron temperature or a decrease in spacing. Plasmatron performance characteristics for both argon and cesium are reported. The argon plasmatron has superior performance. Results are also presented for magnetic cutoff effects and for current distributing effects. These are shown to be important factors for the design of practical devices.

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2O3, and Diamond.

PubMed

Wellmann, Peter J

2017-11-17

Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies.

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond

PubMed Central

2017-01-01

Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies. PMID:29200530

Operation and biasing for single device equivalent to CMOS

DOEpatents

Welch, James D.

2001-01-01

Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

Recent progress in efficient hybrid lead halide perovskite solar cells

PubMed Central

Cui, Jin; Yuan, Huailiang; Li, Junpeng; Xu, Xiaobao; Shen, Yan; Lin, Hong; Wang, Mingkui

2015-01-01

The efficiency of perovskite solar cells (PSCs) has been improved from 9.7 to 19.3%, with the highest value of 20.1% achieved in 2014. Such a high photovoltaic performance can be attributed to optically high absorption characteristics and balanced charge transport properties with long diffusion lengths of the hybrid lead halide perovskite materials. In this review, some fundamental details of hybrid lead iodide perovskite materials, various fabrication techniques and device structures are described, aiming for a better understanding of these materials and thus highly efficient PSC devices. In addition, some advantages and open issues are discussed here to outline the prospects and challenges of using perovskites in commercial photovoltaic devices. PMID:27877815

Effects of capacitors, resistors, and residual charges on the static and dynamic performance of electrostatically actuated devices

NASA Astrophysics Data System (ADS)

Chan, Edward K.; Dutton, Robert W.

1999-03-01

The important practical and realistic design issues of an electrostatic actuator/positioner with full-gap travel are discussed. Analytic expressions and numerical simulations show that parasitic capacitances, and non-uniform deformation in two and three dimensions influence the range of travel of an electrostatic positioner stabilized by the addition of a series capacitor. The effects of residual charge on electrostatically-actuated devices are described. The dynamic stepping characteristics of the positioner under compressible squeeze-film damping and resistive damping are compared. The physical descriptions of devices being fabricated in the MUMPs process are presented along with 3D simulation results that demonstrate viability.

Investigating the Mobility of Trilayer Graphene Nanoribbon in Nanoscale FETs

NASA Astrophysics Data System (ADS)

Rahmani, Meisam; Ghafoori Fard, Hassan; Ahmadi, Mohammad Taghi; Rahbarpour, Saeideh; Habibiyan, Hamidreza; Varmazyari, Vali; Rahmani, Komeil

2017-10-01

The aim of the present paper is to investigate the scaling behaviors of charge carrier mobility as one of the most remarkable characteristics for modeling of nanoscale field-effect transistors (FETs). Many research groups in academia and industry are contributing to the model development and experimental identification of multi-layer graphene FET-based devices. The approach in the present work is to provide an analytical model for carrier mobility of tri-layer graphene nanoribbon (TGN) FET. In order to do so, one starts by identifying the analytical modeling of TGN carrier velocity and ballistic conductance. At the end, a model of charge carrier mobility with numerical solution is analytically derived for TGN FET, in which the carrier concentration, temperature and channel length characteristics dependence are highlighted. Moreover, variation of band gap and gate voltage during the proposed device operation and its effect on carrier mobility is investigated. To evaluate the nanoscale FET performance, the carrier mobility model is also adopted to obtain the I-V characteristics of the device. In order to verify the accuracy of the proposed analytical model for TGN mobility, it is compared to the existing experimental data, and a satisfactory agreement is reported for analogous ambient conditions. Moreover, the proposed model is compared with the published data of single-layer graphene and bi-layer graphene, in which the obtained results demonstrate significant insights into the importance of charge carrier mobility impact in high-performance TGN FET. The work presented here is one step towards an applicable model for real-world nanoscale FETs.

Driving While Interacting With Google Glass: Investigating the Combined Effect of Head-Up Display and Hands-Free Input on Driving Safety and Multitask Performance.

PubMed

Tippey, Kathryn G; Sivaraj, Elayaraj; Ferris, Thomas K

2017-06-01

This study evaluated the individual and combined effects of voice (vs. manual) input and head-up (vs. head-down) display in a driving and device interaction task. Advances in wearable technology offer new possibilities for in-vehicle interaction but also present new challenges for managing driver attention and regulating device usage in vehicles. This research investigated how driving performance is affected by interface characteristics of devices used for concurrent secondary tasks. A positive impact on driving performance was expected when devices included voice-to-text functionality (reducing demand for visual and manual resources) and a head-up display (HUD) (supporting greater visibility of the driving environment). Driver behavior and performance was compared in a texting-while-driving task set during a driving simulation. The texting task was completed with and without voice-to-text using a smartphone and with voice-to-text using Google Glass's HUD. Driving task performance degraded with the addition of the secondary texting task. However, voice-to-text input supported relatively better performance in both driving and texting tasks compared to using manual entry. HUD functionality further improved driving performance compared to conditions using a smartphone and often was not significantly worse than performance without the texting task. This study suggests that despite the performance costs of texting-while-driving, voice input methods improve performance over manual entry, and head-up displays may further extend those performance benefits. This study can inform designers and potential users of wearable technologies as well as policymakers tasked with regulating the use of these technologies while driving.

Nano-array integrated monolithic devices: toward rational materials design and multi-functional performance by scalable nanostructures assembly

DOE PAGES

Wang, Sibo; Ren, Zheng; Guo, Yanbing; ...

2016-03-21

We report the scalable three-dimensional (3-D) integration of functional nanostructures into applicable platforms represents a promising technology to meet the ever-increasing demands of fabricating high performance devices featuring cost-effectiveness, structural sophistication and multi-functional enabling. Such an integration process generally involves a diverse array of nanostructural entities (nano-entities) consisting of dissimilar nanoscale building blocks such as nanoparticles, nanowires, and nanofilms made of metals, ceramics, or polymers. Various synthetic strategies and integration methods have enabled the successful assembly of both structurally and functionally tailored nano-arrays into a unique class of monolithic devices. The performance of nano-array based monolithic devices is dictated bymore » a few important factors such as materials substrate selection, nanostructure composition and nano-architecture geometry. Therefore, the rational material selection and nano-entity manipulation during the nano-array integration process, aiming to exploit the advantageous characteristics of nanostructures and their ensembles, are critical steps towards bridging the design of nanostructure integrated monolithic devices with various practical applications. In this article, we highlight the latest research progress of the two-dimensional (2-D) and 3-D metal and metal oxide based nanostructural integrations into prototype devices applicable with ultrahigh efficiency, good robustness and improved functionality. Lastly, selective examples of nano-array integration, scalable nanomanufacturing and representative monolithic devices such as catalytic converters, sensors and batteries will be utilized as the connecting dots to display a roadmap from hierarchical nanostructural assembly to practical nanotechnology implications ranging from energy, environmental, to chemical and biotechnology areas.« less

Nano-array integrated monolithic devices: toward rational materials design and multi-functional performance by scalable nanostructures assembly

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Sibo; Ren, Zheng; Guo, Yanbing

We report the scalable three-dimensional (3-D) integration of functional nanostructures into applicable platforms represents a promising technology to meet the ever-increasing demands of fabricating high performance devices featuring cost-effectiveness, structural sophistication and multi-functional enabling. Such an integration process generally involves a diverse array of nanostructural entities (nano-entities) consisting of dissimilar nanoscale building blocks such as nanoparticles, nanowires, and nanofilms made of metals, ceramics, or polymers. Various synthetic strategies and integration methods have enabled the successful assembly of both structurally and functionally tailored nano-arrays into a unique class of monolithic devices. The performance of nano-array based monolithic devices is dictated bymore » a few important factors such as materials substrate selection, nanostructure composition and nano-architecture geometry. Therefore, the rational material selection and nano-entity manipulation during the nano-array integration process, aiming to exploit the advantageous characteristics of nanostructures and their ensembles, are critical steps towards bridging the design of nanostructure integrated monolithic devices with various practical applications. In this article, we highlight the latest research progress of the two-dimensional (2-D) and 3-D metal and metal oxide based nanostructural integrations into prototype devices applicable with ultrahigh efficiency, good robustness and improved functionality. Lastly, selective examples of nano-array integration, scalable nanomanufacturing and representative monolithic devices such as catalytic converters, sensors and batteries will be utilized as the connecting dots to display a roadmap from hierarchical nanostructural assembly to practical nanotechnology implications ranging from energy, environmental, to chemical and biotechnology areas.« less

Performance enhancement of a rotational energy harvester utilizing wind-induced vibration of an inclined stay cable

NASA Astrophysics Data System (ADS)

Kim, In-Ho; Jang, Seon-Jun; Jung, Hyung-Jo

2013-07-01

In this paper, an innovative strategy for improving the performance of a recently developed rotational energy harvester is proposed. Its performance can be considerably enhanced by replacing the electromagnetic induction part, consisting of moving permanent magnets and a fixed solenoid coil, with a moving mass and a rotational generator (i.e., an electric motor). The proposed system is easily tuned to the natural frequency of a target structure using the position change of a proof mass. Owing to the high efficiency of the rotational generator, the device can more effectively harness electrical energy from the wind-induced vibration of a stay cable. Also, this new configuration makes the device more compact and geometrically tunable. In order to validate the effectiveness of the new configuration, a series of laboratory and field tests are carried out with the prototype of the proposed device, which is designed and fabricated based on the dynamic characteristics of the vibration of a stay cable installed in an in-service cable-stayed bridge. From the field test, it is observed that the normalized output power of the proposed system is 35.67 mW (m s-2)-2, while that of the original device is just 5.47 mW (m s-2)-2. These results show that the proposed device generates much more electrical energy than the original device. Moreover, it is verified that the proposed device can generate sufficient electricity to power a wireless sensor node placed on a cable under gentle-moderate wind conditions.

Display device-adapted video quality-of-experience assessment

NASA Astrophysics Data System (ADS)

Rehman, Abdul; Zeng, Kai; Wang, Zhou

2015-03-01

Today's viewers consume video content from a variety of connected devices, including smart phones, tablets, notebooks, TVs, and PCs. This imposes significant challenges for managing video traffic efficiently to ensure an acceptable quality-of-experience (QoE) for the end users as the perceptual quality of video content strongly depends on the properties of the display device and the viewing conditions. State-of-the-art full-reference objective video quality assessment algorithms do not take into account the combined impact of display device properties, viewing conditions, and video resolution while performing video quality assessment. We performed a subjective study in order to understand the impact of aforementioned factors on perceptual video QoE. We also propose a full reference video QoE measure, named SSIMplus, that provides real-time prediction of the perceptual quality of a video based on human visual system behaviors, video content characteristics (such as spatial and temporal complexity, and video resolution), display device properties (such as screen size, resolution, and brightness), and viewing conditions (such as viewing distance and angle). Experimental results have shown that the proposed algorithm outperforms state-of-the-art video quality measures in terms of accuracy and speed.

Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires.

PubMed

Yang, Qing; Wu, Yuanpeng; Liu, Ying; Pan, Caofeng; Wang, Zhong Lin

2014-02-21

The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.

Cross delay line sensor characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Owens, Israel J; Remelius, Dennis K; Tiee, Joe J

There exists a wealth of information in the scientific literature on the physical properties and device characterization procedures for complementary metal oxide semiconductor (CMOS), charge coupled device (CCD) and avalanche photodiode (APD) format detectors. Numerous papers and books have also treated photocathode operation in the context of photomultiplier tube (PMT) operation for either non imaging applications or limited night vision capability. However, much less information has been reported in the literature about the characterization procedures and properties of photocathode detectors with novel cross delay line (XDL) anode structures. These allow one to detect single photons and create images by recordingmore » space and time coordinate (X, Y & T) information. In this paper, we report on the physical characteristics and performance of a cross delay line anode sensor with an enhanced near infrared wavelength response photocathode and high dynamic range micro channel plate (MCP) gain (> 10{sup 6}) multiplier stage. Measurement procedures and results including the device dark event rate (DER), pulse height distribution, quantum and electronic device efficiency (QE & DQE) and spatial resolution per effective pixel region in a 25 mm sensor array are presented. The overall knowledge and information obtained from XDL sensor characterization allow us to optimize device performance and assess capability. These device performance properties and capabilities make XDL detectors ideal for remote sensing field applications that require single photon detection, imaging, sub nano-second timing response, high spatial resolution (10's of microns) and large effective image format.« less

Microcircuit Device Reliability Memory/Digital LSI

DTIC Science & Technology

1982-01-01

has been performed. Each failure event record reveals the particular device and test characteristics, as well as associated stress values and other...given by: « s logio (Vxp) where X0 is the observed failure rate Xp is the predicted failure rate « is the residual Values of « are then plotted...n...... ||^||tpMMMWiWMM*i»""l’’൓ iŕŕ" ’• of failures per point). Some "funnelling" in Figure 17 shows this, although there is a fair amount of

An Acousto-Optical Sensor with High Angular Resolution

PubMed Central

Kaloshin, Gennady; Lukin, Igor

2012-01-01

The paper introduces a new laser interferometry-based sensor for diagnosis of random media by means of high accuracy angle measurements and describes the results of its development and testing. Theoretical calculations of the dependence of the range of the laser interferometer on laser beam parameters, device geometry, and atmospheric turbulence characteristics are reported. It is demonstrated that at moderate turbulence intensities corresponding to those observed most frequently in turbulent atmosphere at moderate latitudes and with low interference contrast values, the performance range of the laser interferometer-based device exceeds 5 km. PMID:22737034

Paper-based batteries: a review.

PubMed

Nguyen, Thu H; Fraiwan, Arwa; Choi, Seokheun

2014-04-15

There is an extensively growing interest in using paper or paper-like substrates for batteries and other energy storage devices. Due to their intrinsic characteristics, paper (or paper-like) batteries show outstanding performance while retaining low cost, multifunctionality, versatility, flexibility and disposability. In this overview, we review recent achievements in paper (or paper-like) batteries as well as their applications. Various types of paper power devices are discussed including electrochemical batteries, biofuel cells, lithium-ion batteries, supercapacitors, and nanogenerators. Further scientific and technological challenges in this field are also discussed. © 2013 Elsevier B.V. All rights reserved.

Electrodynamic ratchet motor.

PubMed

Lim, Jiufu; Sader, John E; Mulvaney, Paul

2009-03-01

Brownian ratchets produce directed motion through rectification of thermal fluctuations and have been used for separation processes and colloidal transport. We propose a flashing ratchet motor that enables the transduction of electrical energy into rotary micromechanical work. This is achieved through torque generation provided by boundary shaping of equipotential surfaces. The present device contrasts to previous implementations that focus on translational motion. Stochastic simulations elucidate the performance characteristics of this device as a function of its geometry. Miniaturization to nanoscale dimensions yields rotational speeds in excess of 1 kHz, which is comparable to biomolecular motors of similar size.

Solution processable mixed-solvent exfoliated MoS2 nanosheets for efficient and robust organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Chia-Wei; Wang, Chia; Liao, Chia-Wei; Golder, Jan; Tsai, Ming-Chih; Young, Hong-Tsu; Chen, Chin-Ti; Wu, Chih-I.

2018-04-01

We demonstrate the use of solution-processed molybdenum trioxide (MoO3) nanoparticle-decorated molybdenum disulfide (MoS2) nanosheets (MoS2/MoO3) as hole injection layer (HIL) in organic lighting diodes (OLEDs). The device performance is shown to be significantly improved by the introduction of such MoS2/MoO3 HIL without any post-ultraviolet-ozone treatment, and is shown to better the performance of devices fabricated using conventional poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) and MoO3 nanoparticle HILs. The MoS2/MoO3 nanosheets form a compact film, as smooth as PEDOT:PSS films and smoother than MoO3 nanoparticle films, when simply spin-coated on indium tin oxide substrates. The improvement in device efficiency can be attributed to the smooth surface of the nanostructured MoS2/MoO3 HIL and the excellent conductivity characteristics of the two-dimensional (2D) layered material (MoS2), which facilitate carrier transport in the device and reduce the sheet resistance. Moreover, the long-term stability of OLED devices that use such MoS2/MoO3 layers is shown to be improved dramatically compared with hygroscopic and acidic PEDOT:PSS-based devices.

Malaria Rapid Diagnostic Devices: Performance Characteristics of the ParaSight F Device Determined in a Multisite Field Study

PubMed Central

Forney, J. Russ; Magill, Alan J.; Wongsrichanalai, Chansuda; Sirichaisinthop, Jeeraphat; Bautista, Christian T.; Heppner, D. Gray; Miller, R. Scott; Ockenhouse, Christian F.; Gubanov, Alex; Shafer, Robyn; DeWitt, Caroline Cady; Quino-Ascurra, Higinio A.; Kester, Kent E.; Kain, Kevin C.; Walsh, Douglas S.; Ballou, W. Ripley; Gasser, Robert A.

2001-01-01

Microscopic detection of parasites has been the reference standard for malaria diagnosis for decades. However, difficulty in maintaining required technical skills and infrastructure has spurred the development of several nonmicroscopic malaria rapid diagnostic devices based on the detection of malaria parasite antigen in whole blood. The ParaSight F test is one such device. It detects the presence of Plasmodium falciparum-specific histidine-rich protein 2 by using an antigen-capture immunochromatographic strip format. The present study was conducted at outpatient malaria clinics in Iquitos, Peru, and Maesod, Thailand. Duplicate, blinded, expert microscopy was employed as the reference standard for evaluating device performance. Of 2,988 eligible patients, microscopy showed that 547 (18%) had P. falciparum, 658 (22%) had P. vivax, 2 (0.07%) had P. malariae, and 1,750 (59%) were negative for Plasmodium. Mixed infections (P. falciparum and P. vivax) were identified in 31 patients (1%). The overall sensitivity of ParaSight F for P. falciparum was 95%. When stratified by magnitude of parasitemia (no. of asexual parasites per microliter of whole blood), sensitivities were 83% (>0 to 500 parasites/μl), 87% (501 to 1,000/μl), 98% (1,001 to 5,000/μl), and 98% (>5,000/μl). Device specificity was 86%. PMID:11474008

Simulation and performance of brushless dc motor actuators

NASA Astrophysics Data System (ADS)

Gerba, A., Jr.

1985-12-01

The simulation model for a Brushless D.C. Motor and the associated commutation power conditioner transistor model are presented. The necessary conditions for maximum power output while operating at steady-state speed and sinusoidally distributed air-gap flux are developed. Comparison of simulated model with the measured performance of a typical motor are done both on time response waveforms and on average performance characteristics. These preliminary results indicate good agreement. Plans for model improvement and testing of a motor-driven positioning device for model evaluation are outlined.

Accelerated life testing and temperature dependence of device characteristics in GaAs CHFET devices

NASA Technical Reports Server (NTRS)

Gallegos, M.; Leon, R.; Vu, D. T.; Okuno, J.; Johnson, A. S.

2002-01-01

Accelerated life testing of GaAs complementary heterojunction field effect transistors (CHFET) was carried out. Temperature dependence of single and synchronous rectifier CHFET device characteristics were also obtained.

Advanced vehicle systems assessment. Volume 2: Subsystems assessment

NASA Technical Reports Server (NTRS)

Hardy, K.

1985-01-01

Volume 2 (Subsystems Assessment) is part of a five-volume report entitled Advanced Vehicle Systems Assessment. Volume 2 presents the projected performance capabilities and cost characteristics of applicable subsystems, considering an additional decade of development. Subsystems of interest include energy storage and conversion devices as well as the necessary powertrain components and vehicle subsystems. Volume 2 also includes updated battery information based on the assessment of an independent battery review board (with the aid of subcontractor reports on advanced battery characteristics).

Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Douglas, Erica Ann

Compound semiconductor devices, particularly those based on GaN, have found significant use in military and civilian systems for both microwave and optoelectronic applications. Future uses in ultra-high power radar systems will require the use of GaN transistors operated at very high voltages, currents and temperatures. GaN-based high electron mobility transistors (HEMTs) have proven power handling capability that overshadows all other wide band gap semiconductor devices for high frequency and high-power applications. Little conclusive research has been reported in order to determine the dominating degradation mechanisms of the devices that result in failure under standard operating conditions in the field. Therefore, it is imperative that further reliability testing be carried out to determine the failure mechanisms present in GaN HEMTs in order to improve device performance, and thus further the ability for future technologies to be developed. In order to obtain a better understanding of the true reliability of AlGaN/GaN HEMTs and determine the MTTF under standard operating conditions, it is crucial to investigate the interaction effects between thermal and electrical degradation. This research spans device characterization, device reliability, and device simulation in order to obtain an all-encompassing picture of the device physics. Initially, finite element thermal simulations were performed to investigate the effect of device design on self-heating under high power operation. This was then followed by a study of reliability of HEMTs and other tests structures during high power dc operation. Test structures without Schottky contacts showed high stability as compared to HEMTs, indicating that degradation of the gate is the reason for permanent device degradation. High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http://www.uflib.ufl.edu/etd.html)

Effect of color visualization and display hardware on the visual assessment of pseudocolor medical images

PubMed Central

Zabala-Travers, Silvina; Choi, Mina; Cheng, Wei-Chung

2015-01-01

Purpose: Even though the use of color in the interpretation of medical images has increased significantly in recent years, the ad hoc manner in which color is handled and the lack of standard approaches have been associated with suboptimal and inconsistent diagnostic decisions with a negative impact on patient treatment and prognosis. The purpose of this study is to determine if the choice of color scale and display device hardware affects the visual assessment of patterns that have the characteristics of functional medical images. Methods: Perfusion magnetic resonance imaging (MRI) was the basis for designing and performing experiments. Synthetic images resembling brain dynamic-contrast enhanced MRI consisting of scaled mixtures of white, lumpy, and clustered backgrounds were used to assess the performance of a rainbow (“jet”), a heated black-body (“hot”), and a gray (“gray”) color scale with display devices of different quality on the detection of small changes in color intensity. The authors used a two-alternative, forced-choice design where readers were presented with 600 pairs of images. Each pair consisted of two images of the same pattern flipped along the vertical axis with a small difference in intensity. Readers were asked to select the image with the highest intensity. Three differences in intensity were tested on four display devices: a medical-grade three-million-pixel display, a consumer-grade monitor, a tablet device, and a phone. Results: The estimates of percent correct show that jet outperformed hot and gray in the high and low range of the color scales for all devices with a maximum difference in performance of 18% (confidence intervals: 6%, 30%). Performance with hot was different for high and low intensity, comparable to jet for the high range, and worse than gray for lower intensity values. Similar performance was seen between devices using jet and hot, while gray performance was better for handheld devices. Time of performance was shorter with jet. Conclusions: Our findings demonstrate that the choice of color scale and display hardware affects the visual comparative analysis of pseudocolor images. Follow-up studies in clinical settings are being considered to confirm the results with patient images. PMID:26127048

Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders

NASA Astrophysics Data System (ADS)

Wang, A.; Tadjer, M. J.; Calle, F.

2013-05-01

We investigated the impact of diamond heat spreading layers on the performance of AlGaN/GaN high-electron-mobility-transistors (HEMTs). A finite element method was used to simulate the thermal and electrical characteristics of the devices under dc and pulsed operation conditions. The results show that the device performance can be improved significantly by optimized heat spreading, an effect strongly dependent on the lateral thermal conductivity of the initial several micrometers of diamond deposition. Of crucial importance is the proximity of the diamond layer to the heat source, which makes this method advantageous over other thermal management procedures, especially for the device in pulsed operation. In this case, the self-heating effect can be suppressed, and it is not affected by either the substrate or its thermal boundary resistance at the GaN/substrate at wider pulses. The device with a 5 µm diamond layer can present 10.5% improvement of drain current, and the self-heating effect can be neglected for a 100 ns pulse width at 1 V gate and 20 V drain voltage.

Hybrid optical fiber add-drop filter based on wavelength dependent light coupling between micro/nano fiber ring and side-polished fiber

PubMed Central

Yu, Jianhui; Jin, Shaoshen; Wei, Qingsong; Zang, Zhigang; Lu, Huihui; He, Xiaoli; Luo, Yunhan; Tang, Jieyuan; Zhang, Jun; Chen, Zhe

2015-01-01

In this paper, we report our experimental study on directly coupling a micro/nano fiber (MNOF) ring with a side-polished fiber(SPF). As a result of the study, the behavior of an add-drop filter was observed. The demonstrated add-drop filter explored the wavelength dependence of light coupling between a MNOF ring and a SPF. The characteristics of the filter and its performance dependence on the MNOF ring diameter were investigated experimentally. The investigation resulted in an empirically obtained ring diameter that showed relatively good filter performance. Since light coupling between a (MNOF) and a conventional single mode fiber has remained a challenge in the photonic integration community, the present study may provide an alternative way to couple light between a MNOF device and a conventional single mode fiber based device or system. The hybridization approach that uses a SPF as a platform to integrate a MNOF device may enable the realization of other all-fiber optical hybrid devices. PMID:25578467

Characterization and device performance of (AgCu)(InGa)Se2 absorber layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only controlmore » samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and η = 13.0%.« less

Enhancing analog performance and suppression of subthreshold swing using hetero-junctionless double gate TFETs

NASA Astrophysics Data System (ADS)

Chauhan, Sudakar Singh; Sharma, Neha

2017-12-01

This paper proposes hetero-junctionless double gate tunnel field effect transistor (HJLDG-TFETs) for suppression of subthreshold swing (SS) using an InAs compound semiconductor material. The proposed device with high dielectric material, gives an excellent performance when InAs uses at source side. Because of low band gap of 0.36 eV , it reduces the potential barrier height of source channel interface causing higher band to band tunneling. Whereas, Si at the drain side with higher band gap of 1.12 eV , increasing the barrier height of drain channel interface causing lower quantum tunneling. As a result, the proposed device with high-k (HfO2) at 30 nm channel section provides a tremendous characteristics with high ION /IOFF ratio of 2 ×1011 , a point SS of 43.30 mV / decade and moderate SS of 56.75 mV / decade . All the above results show that the proposed device is assured for a low power switching application. The variation in gate supply voltage also analyzed for transconductance property of the device.

Operation mode switchable charge-trap memory based on few-layer MoS2

NASA Astrophysics Data System (ADS)

Hou, Xiang; Yan, Xiao; Liu, Chunsen; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-03-01

Ultrathin layered two-dimensional (2D) semiconductors like MoS2 and WSe2 have received a lot of attention because of their excellent electrical properties and potential applications in electronic devices. We demonstrate a charge-trap memory with two different tunable operation modes based on a few-layer MoS2 channel and an Al2O3/HfO2/Al2O3 charge storage stack. Our device shows excellent memory properties under the traditional three-terminal operation mode. More importantly, unlike conventional charge-trap devices, this device can also realize the memory performance with just two terminals (drain and source) because of the unique atomic crystal electrical characteristics. Under the two-terminal operation mode, the erase/program current ratio can reach up to 104 with a stable retention property. Our study indicates that the conventional charge-trap memory cell can also realize the memory performance without the gate terminal based on novel two dimensional materials, which is meaningful for low power consumption and high integration density applications.

Testing and performance of a new friction damper for seismic vibration control

NASA Astrophysics Data System (ADS)

Martínez, Carlos A.; Curadelli, Oscar

2017-07-01

In the last two decades, great efforts were carried out to reduce the seismic demand on structures through the concept of energy dissipation instead of increasing the stiffness and strength. Several devices based on different energy dissipation principles have been developed and implemented worldwide, however, most of the dissipation devices are usually installed using diagonal braces, which entail certain drawbacks on apertures for circulation, lighting or ventilation and architectural or functional requirements often preclude this type of installations. In this work, a conceptual development of a novel energy dissipation device, called Multiple Friction Damper (MFD), is proposed and examined. To verify its characteristics and performance, the MFD was implemented on a single storey steel frame experimental model and tested under different conditions of normal force and real time acceleration records. Experimental results demonstrated that the new MFD constitutes an effective and reliable alternative to control the structural response in terms of displacement and acceleration. A mathematical formulation based on the Wen's model reflecting the nonlinear behaviour of the device is also presented.

Effect of electron transport properties on unipolar CdZnTe radiation detectors: LUND, SpectrumPlus, and Coplanar Grid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ralph B. James

2000-01-07

Device simulations of (1) the laterally-contacted-unipolar-nuclear detector (LUND), (2) the SpectrumPlus, (3) and the coplanar grid made of Cd{sub 0.9}Zn{sub 0.1}Te (CZT) were performed for {sup 137}Cs irradiation by 662.15 keV gamma-rays. Realistic and controlled simulations of the gamma-ray interactions with the CZT material were done using the MCNP4B2 Monte Carlo program, and the detector responses were simulated using the Sandia three-dimensional multielectrode simulation program (SandTMSP). The simulations were done for the best and the worst expected carrier nobilities and lifetimes of currently commercially available CZT materials for radiation detector applications. For the simulated unipolar devices, the active device volumesmore » were relatively large and the energy resolutions were fairly good, but these performance characteristics were found to be very sensitive to the materials properties. The internal electric fields, the weighting potentials, and the charge induced efficiency maps were calculated to give insights into the operation of these devices.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Juhee; Lee, Sungpyo; Lee, Moo Hyung

Quasi-unipolar non-volatile organic transistor memory (NOTM) can combine the best characteristics of conventional unipolar and ambipolar NOTMs and, as a result, exhibit improved device performance. Unipolar NOTMs typically exhibit a large signal ratio between the programmed and erased current signals but also require a large voltage to program and erase the memory cells. Meanwhile, an ambipolar NOTM can be programmed and erased at lower voltages, but the resulting signal ratio is small. By embedding a discontinuous n-type fullerene layer within a p-type pentacene film, quasi-unipolar NOTMs are fabricated, of which the signal storage utilizes both electrons and holes while themore » electrical signal relies on only hole conduction. These devices exhibit superior memory performance relative to both pristine unipolar pentacene devices and ambipolar fullerene/pentacene bilayer devices. The quasi-unipolar NOTM exhibited a larger signal ratio between the programmed and erased states while also reducing the voltage required to program and erase a memory cell. This simple approach should be readily applicable for various combinations of advanced organic semiconductors that have been recently developed and thereby should make a significant impact on organic memory research.« less

Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices

NASA Astrophysics Data System (ADS)

Mulder, Watson

Heterojunction with Intrinsic Thin-layer (HIT) solar cells are an important photovoltaic technology, recently reaching record power conversion efficiencies. HIT cells hold advantages over the conventional crystalline Si solar cells, such as their fabrication at lower temperatures and their shorter fabrication time. It is important to understand the electronic characteristics and transport properties of HIT cells to continue to improve their efficiencies. The fundamental measurements of a HIT solar cell with an innovative n+/p/p+ structure are presented. We also report on a series of these HIT cells fabricated on wafers with different doping concentrations, observing the relationship between doping concentration and characteristics such as open-circuit voltage and diffusion length. Nanocrystalline Silicon-Germanium (nc-SiGe) is a useful material for photovoltaic devices and photodetectors. The material features good absorption extending to the infrared region even in thin layers. Its bandgap can be adjusted between that of Si (˜1.1 eV) and Ge (˜0.7 eV) by varying the alloy composition ratio during deposition. However, there has been very little previous work to measure and understand the defect density spectrum of nc-SiGe. Defects are responsible for controlling the recombination and thus the performance of solar cell devices. Capacitance-Frequency measurements at various temperatures are used in order to estimate the trap density profile within the bandgap of nc-SiGe.

Apparatus and methods for real-time detection of explosives devices

DOEpatents

Blackburn, Brandon W [Idaho Falls, ID; Hunt, Alan W [Pocatello, ID; Chichester, David L [Idaho Falls, ID

2014-01-07

The present disclosure relates, according to some embodiments, to apparatus, devices, systems, and/or methods for real-time detection of a concealed or camouflaged explosive device (e.g., EFPs and IEDs) from a safe stand-off distance. Apparatus, system and/or methods of the disclosure may also be operable to identify and/or spatially locate and/or detect an explosive device. An apparatus or system may comprise an x-ray generator that generates high-energy x-rays and/or electrons operable to contact and activate a metal comprised in an explosive device from a stand-off distance; and a detector operable to detect activation of the metal. Identifying an explosive device may comprise detecting characteristic radiation signatures emitted by metals specific to an EFP, an IED or a landmine. Apparatus and systems of the disclosure may be mounted on vehicles and methods of the disclosure may be performed while moving in the vehicle and from a safe stand-off distance.

Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses

PubMed Central

Fukuda, Kenjiro; Sekine, Tomohito; Shiwaku, Rei; Morimoto, Takuya; Kumaki, Daisuke; Tokito, Shizuo

2016-01-01

The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350 nm have electrical performance levels close to those fabricated on conventional flexible substrates. Moreover, they exhibit excellent mechanical robustness, whereby their static and dynamic electrical characteristics do not change even under 50% compressive strain. Tests using systematically applied compressive strains reveal that these free-standing organic transistors possess anisotropic mechanical stability, and a strain model for a multilayer stack can be used to describe the strain in this sort of ultra-thin device. These results show the feasibility of ultimate-thin organic electronic devices using free-standing constructions. PMID:27278828

Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities.

PubMed

Lin, Yen-Fu; Chang, Chia-Hung; Hung, Tsu-Chang; Jian, Wen-Bin; Tsukagoshi, Kazuhito; Wu, Yue-Han; Chang, Li; Liu, Zhaoping; Fang, Jiye

2015-08-11

To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott's variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics.

Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities

PubMed Central

Lin, Yen-Fu; Chang, Chia-Hung; Hung, Tsu-Chang; Jian, Wen-Bin; Tsukagoshi, Kazuhito; Wu, Yue-Han; Chang, Li; Liu, Zhaoping; Fang, Jiye

2015-01-01

To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott’s variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics. PMID:26260674

Highly Efficient Multilayer Thermoelectric Devices

NASA Technical Reports Server (NTRS)

Boufelfel, Ali

2006-01-01

Multilayer thermoelectric devices now at the prototype stage of development exhibit a combination of desirable characteristics, including high figures of merit and high performance/cost ratios. These devices are capable of producing temperature differences of the order of 50 K in operation at or near room temperature. A solvent-free batch process for mass production of these state-of-the-art thermoelectric devices has also been developed. Like prior thermoelectric devices, the present ones have commercial potential mainly by virtue of their utility as means of controlled cooling (and/or, in some cases, heating) of sensors, integrated circuits, and temperature-critical components of scientific instruments. The advantages of thermoelectric devices for such uses include no need for circulating working fluids through or within the devices, generation of little if any noise, and high reliability. The disadvantages of prior thermoelectric devices include high power consumption and relatively low coefficients of performance. The present development program was undertaken in the hope of reducing the magnitudes of the aforementioned disadvantages and, especially, obtaining higher figures of merit for operation at and near room temperature. Accomplishments of the program thus far include development of an algorithm to estimate the heat extracted by, and the maximum temperature drop produced by, a thermoelectric device; solution of the problem of exchange of heat between a thermoelectric cooler and a water-cooled copper block; retrofitting of a vacuum chamber for depositing materials by sputtering; design of masks; and fabrication of multilayer thermoelectric devices of two different designs, denoted I and II. For both the I and II designs, the thicknesses of layers are of the order of nanometers. In devices of design I, nonconsecutive semiconductor layers are electrically connected in series. Devices of design II contain superlattices comprising alternating electron-acceptor (p)-doped and electron-donor (n)-doped, nanometer- thick semiconductor layers.

Study of solid rocket motor for space shuttle booster, volume 2, book 5, appendices E thru H

NASA Technical Reports Server (NTRS)

1972-01-01

Preliminary parametric studies were performed to establish size, weight and packaging arrangements for aerodynamic decelerator devices that could be used for recovery of the expended solid propellant rocket motors used in the launch phase of the Space Shuttle System. Computations were made using standard engineering analysis techniques. Terminal stage parachutes were sized to provide equilibrium descent velocities for water entry that are presently thought to be acceptable without developing loads that could exceed the boosters structural integrity. The performance characteristics of the aerodynamic parachute decelerator devices considered are based on analysis and prior test results for similar configurations and are assumed to be maintained at the scale requirements of the present problem.

Reliability Considerations of ULP Scaled CMOS in Spacecraft Systems

NASA Technical Reports Server (NTRS)

White, Mark; MacNeal, Kristen; Cooper, Mark

2012-01-01

NASA, the aerospace community, and other high reliability (hi-rel) users of advanced microelectronic products face many challenges as technology continues to scale into the deep sub-micron region. Decreasing the feature size of CMOS devices not only allows more components to be placed on a single chip, but it increases performance by allowing faster switching (or clock) speeds with reduced power compared to larger scaled devices. Higher performance, and lower operating and stand-by power characteristics of Ultra-Low Power (ULP) microelectronics are not only desirable, but also necessary to meet low power consumption design goals of critical spacecraft systems. The integration of these components in such systems, however, must be balanced with the overall risk tolerance of the project.

Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions.

PubMed

Khan, Muhammad Farooq; Nazir, Ghazanfar; Lermolenko, Volodymyr M; Eom, Jonghwa

2016-01-01

The electrical and photo-electrical properties of exfoliated MoS 2 were investigated in the dark and in the presence of deep ultraviolet (DUV) light under various environmental conditions (vacuum, N 2 gas, air, and O 2 gas). We examined the effects of environmental gases on MoS 2 flakes in the dark and after DUV illumination through Raman spectroscopy and found that DUV light induced red and blue shifts of peaks (E 1 2 g and A 1 g ) position in the presence of N 2 and O 2 gases, respectively. In the dark, the threshold voltage in the transfer characteristics of few-layer (FL) MoS 2 field-effect transistors (FETs) remained almost the same in vacuum and N 2 gas but shifted toward positive gate voltages in air or O 2 gas because of the adsorption of oxygen atoms/molecules on the MoS 2 surface. We analyzed light detection parameters such as responsivity, detectivity, external quantum efficiency, linear dynamic range, and relaxation time to characterize the photoresponse behavior of FL-MoS 2 FETs under various environmental conditions. All parameters were improved in their performances in N 2 gas, but deteriorated in O 2 gas environment. The photocurrent decayed with a large time constant in N 2 gas, but decayed with a small time constant in O 2 gas. We also investigated the characteristics of the devices after passivating by Al 2 O 3 film on the MoS 2 surface. The devices became almost hysteresis-free in the transfer characteristics and stable with improved mobility. Given its outstanding performance under DUV light, the passivated device may be potentially used for applications in MoS 2 -based integrated optoelectronic circuits, light sensing devices, and solar cells.

Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device.

PubMed

Khan, Muhammad Atif; Rathi, Servin; Park, Jinwoo; Lim, Dongsuk; Lee, Yoontae; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

2017-08-16

The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS 2 ) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS 2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 10 3 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS 2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.

An Evaluation of Sharp Cut Cyclones for Sampling Diesel Particulate Matter Aerosol in the Presence of Respirable Dust

PubMed Central

Cauda, Emanuele; Sheehan, Maura; Gussman, Robert; Kenny, Lee; Volkwein, Jon

2015-01-01

Two prototype cyclones were the subjects of a comparative research campaign with a diesel particulate matter sampler (DPMS) that consists of a respirable cyclone combined with a downstream impactor. The DPMS is currently used in mining environments to separate dust from the diesel particulate matter and to avoid interferences in the analysis of integrated samples and direct-reading monitoring in occupational environments. The sampling characteristics of all three devices were compared using ammonium fluorescein, diesel, and coal dust aerosols. With solid spherical test aerosols at low particle loadings, the aerodynamic size-selection characteristics of all three devices were found to be similar, with 50% penetration efficiencies (d50) close to the design value of 0.8 µm, as required by the US Mine Safety and Health Administration for monitoring occupational exposure to diesel particulate matter in US mining operations. The prototype cyclones were shown to have ‘sharp cut’ size-selection characteristics that equaled or exceeded the sharpness of the DPMS. The penetration of diesel aerosols was optimal for all three samplers, while the results of the tests with coal dust induced the exclusion of one of the prototypes from subsequent testing. The sampling characteristics of the remaining prototype sharp cut cyclone (SCC) and the DPMS were tested with different loading of coal dust. While the characteristics of the SCC remained constant, the deposited respirable coal dust particles altered the size-selection performance of the currently used sampler. This study demonstrates that the SCC performed better overall than the DPMS. PMID:25060240

InP tunnel junction for InGaAs/InP tandem solar cells

NASA Technical Reports Server (NTRS)

Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

1995-01-01

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

Fabrication of 1-dimension nano-material-based device and its electrical characteristics

NASA Astrophysics Data System (ADS)

Yang, Xing; Zhou, Zhaoying; Zheng, Fuzhong; Zhang, Min

2008-12-01

In recent years, many kinds of 1-dimension nano-materials (Carbon nanotube, ZnO nanobelt and nanowire etc.) continue to emerge which exhibit distinct and unique electromechanical, piezoelectric, photoelectrical properties. In this paper, a 1-dimension nano-materials-based device was proposed. The bottom-up and top-down combined process were used for constructing CNT-array-based device and ZnO nanowire device. The electrical characteristics of the 1D nano-materials-based devices were also investigated. The measurement results of electrical characteristics demonstrate that it is ohm electrical contact behavior between the nano-material and micro-electrodes in the proposed device which also have the field effect. The proposed 1D nano-material-based device shows the application potential in the sensing fields.

Application of a wide-field phantom eye for optical coherence tomography and reflectance imaging.

PubMed

Corcoran, Anthony; Muyo, Gonzalo; van Hemert, Jano; Gorman, Alistair; Harvey, Andrew R

2015-12-15

Optical coherence tomography (OCT) and reflectance imaging are used in clinical practice to measure the thickness and transverse dimensions of retinal features. The recent trend towards increasing the field of view (FOV) of these devices has led to an increasing significance of the optical aberrations of both the human eye and the device. We report the design, manufacture and application of the first phantom eye that reproduces the off-axis optical characteristics of the human eye, and allows the performance assessment of wide-field ophthalmic devices. We base our design and manufacture on the wide-field schematic eye, [Navarro, R. J. Opt. Soc. Am. A , 1985, 2 .] as an accurate proxy to the human eye and enable assessment of ophthalmic imaging performance for a [Formula: see text] external FOV. We used multi-material 3D-printed retinal targets to assess imaging performance of the following ophthalmic instruments: the Optos 200Tx, Heidelberg Spectralis, Zeiss FF4 fundus camera and Optos OCT SLO and use the phantom to provide an insight into some of the challenges of wide-field OCT.

Application of a wide-field phantom eye for optical coherence tomography and reflectance imaging

NASA Astrophysics Data System (ADS)

Corcoran, Anthony; Muyo, Gonzalo; van Hemert, Jano; Gorman, Alistair; Harvey, Andrew R.

2015-12-01

Optical coherence tomography (OCT) and reflectance imaging are used in clinical practice to measure the thickness and transverse dimensions of retinal features. The recent trend towards increasing the field of view (FOV) of these devices has led to an increasing significance of the optical aberrations of both the human eye and the device. We report the design, manufacture and application of the first phantom eye that reproduces the off-axis optical characteristics of the human eye, and allows the performance assessment of wide-field ophthalmic devices. We base our design and manufacture on the wide-field schematic eye, [Navarro, R. J. Opt. Soc. Am. A, 1985, 2.] as an accurate proxy to the human eye and enable assessment of ophthalmic imaging performance for a ? external FOV. We used multi-material 3D-printed retinal targets to assess imaging performance of the following ophthalmic instruments: the Optos 200Tx, Heidelberg Spectralis, Zeiss FF4 fundus camera and Optos OCT SLO and use the phantom to provide an insight into some of the challenges of wide-field OCT.

Characterization of few-layered graphene grown by carbon implantation

NASA Astrophysics Data System (ADS)

Lee, Kin Kiong; McCallum, Jeffrey C.; Jamieson, David N.

2014-02-01

Graphene is considered to be a very promising material for applications in nanotechnology. The properties of graphene are strongly dependent on defects that occur during growth and processing. These defects can be either detrimental or beneficial to device performance depending on defect type, location and device application. Here we present experimental results on formation of few-layered graphene by carbon ion implantation into nickel films and characteristics of graphene devices formed by graphene transfer and lithographic patterning. Micro-Raman spectroscopy was used to determine the number of graphene layers formed and identify defects arising from the device processing. The graphene films were cleaned by annealing in vacuum. Transport properties of cleaned graphene films were investigated by fabrication of back-gated field-effect transistors, which exhibited high hole and electron mobility of 1935 and 1905 cm2/Vs, respectively.

Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film

PubMed Central

Kyu Yang, Min; Ju, Hyunsu; Hwan Kim, Gun; Lee, Jeon-Kook; Ryu, Han-Cheol

2015-01-01

A Ta/TaOx/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properties. To reveal the resistive switching mechanism of the device, micro structure analysis using high-resolution transmission electron microscope (HR-TEM) was performed. From the observation results, two different phases of Ta-metal clusters of cubic α-Ta and tetragonal β-Ta were founded in the amorphous TaOx mother-matrix after the device was switched from high resistance state (HRS) to low resistance state (LRS) by externally applied voltage bias. The observed Ta metal clusters unveiled the origin of the electric conduction paths in the TaOx thin film at the LRS. PMID:26365532

Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film

NASA Astrophysics Data System (ADS)

Kyu Yang, Min; Ju, Hyunsu; Hwan Kim, Gun; Lee, Jeon-Kook; Ryu, Han-Cheol

2015-09-01

A Ta/TaOx/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properties. To reveal the resistive switching mechanism of the device, micro structure analysis using high-resolution transmission electron microscope (HR-TEM) was performed. From the observation results, two different phases of Ta-metal clusters of cubic α-Ta and tetragonal β-Ta were founded in the amorphous TaOx mother-matrix after the device was switched from high resistance state (HRS) to low resistance state (LRS) by externally applied voltage bias. The observed Ta metal clusters unveiled the origin of the electric conduction paths in the TaOx thin film at the LRS.

Wave Energy Prize - 1/20th Testing - SEWEC

DOE Data Explorer

Wesley Scharmen

2016-10-07

Data from the 1/20th scale testing data completed on the Wave Energy Prize for the SEWEC team, including the 1/20th scale test plan, raw test data, video, photos, and data analysis results. The top level objective of the 1/20th scale device testing is to obtain the necessary measurements required for determining Average Climate Capture Width per Characteristic Capital Expenditure (ACE) and the Hydrodynamic Performance Quality (HPQ), key metrics for determining the Wave Energy Prize (WEP) winners. * Note: During the TG4 judging meeting, the Wave Energy Prize judges reviewed the data collected during the testing of SEWEC's device at Carderock and determined that the data were inconclusive and did not allow an ACE value to be calculated for the device. Consequently, the SEWEC device was deemed ineligible to be considered for the Wave Energy Prize.

Space power tubes - very much alive

NASA Technical Reports Server (NTRS)

Kosmahl, H. G.

1983-01-01

The application of the traveling wave tubes (TWT), the backbone of all civilian and military space communication programs, to past, present and future satellites is discussed. Performance characteristics and the trends and challenges in the future are reviewed. Finally, a comparison with Solid State devices, as derived from fundamental laws, is made and limitations discussed.

Lithium batteries. (Latest citations from the EI Compendex*plus database). Published Search

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1994-12-01

The bibliography contains citations concerning the design, development, and applications of lithium batteries. Topics include electrochemical aspects, cycling characteristics, performance evaluations, and applications in cardiac pacemaker devices. Batteries using organic compounds, chlorides, and metal sulfides are discussed. (Contains 250 citations and includes a subject term index and title list.)

Lithium batteries. (Latest citations from the EI Compendex*plus database). Published Search

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1994-03-01

The bibliography contains citations concerning the design, development, and applications of lithium batteries. Topics include electrochemical aspects, cycling characteristics, performance evaluations, and applications in cardiac pacemaker devices. Batteries using organic compounds, chlorides, and metal sulfides are discussed. (Contains 250 citations and includes a subject term index and title list.)

Validating models of target acquisition performance in the dismounted soldier context

NASA Astrophysics Data System (ADS)

Glaholt, Mackenzie G.; Wong, Rachel K.; Hollands, Justin G.

2018-04-01

The problem of predicting real-world operator performance with digital imaging devices is of great interest within the military and commercial domains. There are several approaches to this problem, including: field trials with imaging devices, laboratory experiments using imagery captured from these devices, and models that predict human performance based on imaging device parameters. The modeling approach is desirable, as both field trials and laboratory experiments are costly and time-consuming. However, the data from these experiments is required for model validation. Here we considered this problem in the context of dismounted soldiering, for which detection and identification of human targets are essential tasks. Human performance data were obtained for two-alternative detection and identification decisions in a laboratory experiment in which photographs of human targets were presented on a computer monitor and the images were digitally magnified to simulate range-to-target. We then compared the predictions of different performance models within the NV-IPM software package: Targeting Task Performance (TTP) metric model and the Johnson model. We also introduced a modification to the TTP metric computation that incorporates an additional correction for target angular size. We examined model predictions using NV-IPM default values for a critical model constant, V50, and we also considered predictions when this value was optimized to fit the behavioral data. When using default values, certain model versions produced a reasonably close fit to the human performance data in the detection task, while for the identification task all models substantially overestimated performance. When using fitted V50 values the models produced improved predictions, though the slopes of the performance functions were still shallow compared to the behavioral data. These findings are discussed in relation to the models' designs and parameters, and the characteristics of the behavioral paradigm.

Study on copper phthalocyanine and perylene-based ambipolar organic light-emitting field-effect transistors produced using neutral beam deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Dae-Kyu; Oh, Jeong-Do; Shin, Eun-Sol

2014-04-28

The neutral cluster beam deposition (NCBD) method has been applied to the production and characterization of ambipolar, heterojunction-based organic light-emitting field-effect transistors (OLEFETs) with a top-contact, multi-digitated, long-channel geometry. Organic thin films of n-type N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and p-type copper phthalocyanine were successively deposited on the hydroxyl-free polymethyl-methacrylate (PMMA)-coated SiO{sub 2} dielectrics using the NCBD method. Characterization of the morphological and structural properties of the organic active layers was performed using atomic force microscopy and X-ray diffraction. Various device parameters such as hole- and electron-carrier mobilities, threshold voltages, and electroluminescence (EL) were derived from the fits of the observed current-voltage andmore » current-voltage-light emission characteristics of OLEFETs. The OLEFETs demonstrated good field-effect characteristics, well-balanced ambipolarity, and substantial EL under ambient conditions. The device performance, which is strongly correlated with the surface morphology and the structural properties of the organic active layers, is discussed along with the operating conduction mechanism.« less

Aerodynamic characteristics of a propeller-powered high-lift semispan wing

NASA Technical Reports Server (NTRS)

Gentry, Garl L., Jr.; Takallu, M. A.; Applin, Zachary T.

1994-01-01

A small-scale semispan high-lift wing-flap system equipped under the wing with a turboprop engine assembly was tested in the LaRC 14- by 22-Foot Subsonic Tunnel. Experimental data were obtained for various propeller rotational speeds, nacelle locations, and nacelle inclinations. To isolate the effects of the high lift system, data were obtained with and without the flaps and leading-edge device. The effects of the propeller slipstream on the overall longitudinal aerodynamic characteristics of the wing-propeller assembly were examined. Test results indicated that the lift coefficient of the wing could be increased by the propeller slipstream when the rotational speed was increased and high-lift devices were deployed. Decreasing the nacelle inclination (increased pitch down) enhanced the lift performance of the system much more than varying the vertical or horizontal location of the nacelle. Furthermore, decreasing the nacelle inclination led to higher lift curve slope values, which indicated that the powered wing could sustain higher angles of attack near maximum lift performance. Any lift augmentation was accompanied by a drag penalty due to the increased wing lift.

Evolving Requirements for Magnetic Tape Data Storage Systems

NASA Technical Reports Server (NTRS)

Gniewek, John J.

1996-01-01

Magnetic tape data storage systems have evolved in an environment where the major applications have been back-up/restore, disaster recovery, and long term archive. Coincident with the rapidly improving price-performance of disk storage systems, the prime requirements for tape storage systems have remained: (1) low cost per MB, (2) a data rate balanced to the remaining system components. Little emphasis was given to configuring the technology components to optimize retrieval of the stored data. Emerging new applications such as network attached high speed memory (HSM), and digital libraries, place additional emphasis and requirements on the retrieval of the stored data. It is therefore desirable to consider the system to be defined both by STorage And Retrieval System (STARS) requirements. It is possible to provide comparative performance analysis of different STARS by incorporating parameters related to (1) device characteristics, and (2) application characteristics in combination with queuing theory analysis. Results of these analyses are presented here in the form of response time as a function of system configuration for two different types of devices and for a variety of applications.

GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Juang, Bor-Chau, E-mail: bcjuang@ucla.edu; Laghumavarapu, Ramesh B.; Foggo, Brandon J.

There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAsmore » substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.« less

CFD Analysis of Mixing Characteristics of Several Fuel Injectors at Hypervelocity Flow Conditions

NASA Technical Reports Server (NTRS)

Drozda, Tomasz G.; Drummond, J. Philip; Baurle, Robert A.

2016-01-01

CFD analysis is presented of the mixing characteristics and performance of three fuel injectors at hypervelocity flow conditions. The calculations were carried out using the VULCAN-CFD solver and Reynolds-Averaged Simulations (RAS). The high Mach number flow conditions match those proposed for the planned experiments conducted as a part of the Enhanced Injection and Mixing Project (EIMP) at the NASA Langley Research Center. The EIMP aims to investigate scramjet fuel injection and mixing physics, improve the understanding of underlying physical processes, and develop enhancement strategies and functional relationships relevant to flight Mach numbers greater than eight. Because of the high Mach number flow considered, the injectors consist of a fuel placement device, a strut; and a fluidic vortical mixer, a ramp. These devices accomplish the necessary task of distributing and mixing fuel into the supersonic cross-flow albeit via different strategies. Both of these devices were previously studied at lower flight Mach numbers where they exhibited promising performance in terms of mixing efficiency and total pressure recovery. For comparison, a flush-wall injector is also included. This type of injector generally represents the simplest method of introducing fuel into a scramjet combustor, however, at high flight Mach number conditions, the dynamic pressure needed to induce sufficient fuel penetration may be difficult to achieve along with other requirements such as achieving desired levels of fuel-to-air mixing at the required equivalence ratio. The three injectors represent the baseline configurations planned for the experiments. The current work discusses the mixing flow field behavior and differences among the three fuel injectors, mixing performance as described by the mixing efficiency and the total pressure recovery, and performance considerations based on the thrust potential.

Computational Fluid Dynamics and Experimental Characterization of the Pediatric Pump-Lung.

PubMed

Wu, Zhongjun J; Gellman, Barry; Zhang, Tao; Taskin, M Ertan; Dasse, Kurt A; Griffith, Bartley P

2011-12-01

The pediatric pump-lung (PediPL) is a miniaturized integrated pediatric pump-oxygenator specifically designed for cardiac or cardiopulmonary support for patients weighing 5-20 kg to allow mobility and extended use for 30 days. The PediPL incorporates a magnetically levitated impeller with uniquely configured hollow fiber membranes into a single unit capable of performing both pumping and gas exchange. A combined computational and experimental study was conducted to characterize the functional and hemocompatibility performances of this newly developed device. The three-dimensional flow features of the PediPL and its hemolytic characteristics were analyzed using computational fluid dynamics based modeling. The oxygen exchange was modeled based on a convection-diffusion-reaction process. The hollow fiber membranes were modeled as a porous medium which incorporates the flow resistance in the bundle by an added momentum sink term. The pumping function was evaluated for the required range of operating conditions (0.5-2.5 L/min and 1000-3000 rpm). The blood damage potentials were further analyzed in terms of flow and shear stress fields, and the calculations of hemolysis index. In parallel, the hydraulic pump performance, oxygen transfer and hemolysis level were quantified experimentally. Based on the computational and experimental results, the PediPL device is found to be functional to provide necessary oxygen transfer and blood pumping requirements for the pediatric patients. Smooth blood flow characteristics and low blood damage potential were observed in the entire device. The in-vitro tests further confirmed that the PediPL can provide adequate blood pumping and oxygen transfer over the range of intended operating conditions with acceptable hemolytic performance. The rated flow rate for oxygenation is 2.5 L/min. The normalized index of hemolysis is 0.065 g/100L at 1.0 L/min and 3000 rpm.

Comparison of Spectra Optia and COBE Spectra apheresis systems' performances for red blood cell exchange procedures.

PubMed

Kim, Jaehyup; Joseph, Ranjit; Matevosyan, Karen; Sarode, Ravi

2016-12-01

Spectra Optia (Terumo BCT, Lakewood, CO) was FDA approved for red blood cell exchange (RBCx) procedures in January 2014 and is expected to replace COBE spectra (Terumo BCT) very soon in the USA. The performance characteristics of these devices for Isovolemic Hemodilution (IHD-RBCx) procedure were compared in this study. A total of 114 IHD-RBCx procedures from 19 patients were analyzed. For every patient, three procedures on each device with similar pre-procedure hematocrits were compared. Pre and post procedure laboratory parameters compared were hemoglobin S (HbS), hematocrits (Hct), platelet counts and fraction of cells remaining (FCR). Statistical analysis was performed using t-test adjusted by the Holm-Bonferroni method to reduce family-wise error rate. There were no significant differences between these two devices in regards to HbS, Hct, FCR and platelet counts (p = > 0.05). However, rinseback volume (124.2 ± 8.9 ml) and normal saline replacement volume during IHD phase (296.1 ± 97.2 ml) were lower in Spectra Optia as compared to COBE Spectra (337 ± 33.8 ml and 326.6 ± 105.2 ml, p value <0.001 and 0.030 respectively). Spectra Optia had a longer run time (107.1 ± 15.9 min vs 123.8 ± 19.6 min, p value <0.001) overall. Performance characteristics of Spectra Optia for HbS, Hct and FCR were similar to COBE Spectra for IHD-RBCx. IHD-RBCx procedure on Optia required less normal saline replacement volume and rinse back volume but with overall longer procedure run time. Copyright © 2016. Published by Elsevier Ltd.

Review on analog/radio frequency performance of advanced silicon MOSFETs

NASA Astrophysics Data System (ADS)

Passi, Vikram; Raskin, Jean-Pierre

2017-12-01

Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This downscaling, which has proved beneficial to digital circuits, is primarily the result of the need for improved circuit performance and cost reduction and has resulted in tremendous reduction of the carrier transit time across the channel, thereby resulting in very high cut-off frequencies. It is only in recent decades that complementary metal-oxide-semiconductor (CMOS) field-effect transistor (FET) has been considered as the radio frequency (RF) technology of choice. In this review, the status of the digital, analog and RF figures of merit (FoM) of silicon-based FETs is presented. State-of-the-art devices with very good performance showing low values of drain-induced barrier lowering, sub-threshold swing, high values of gate transconductance, Early voltage, cut-off frequencies, and low minimum noise figure, and good low-frequency noise characteristic values are reported. The dependence of these FoM on the device gate length is also shown, helping the readers to understand the trends and challenges faced by shorter CMOS nodes. Device performance boosters including silicon-on-insulator substrates, multiple-gate architectures, strain engineering, ultra-thin body and buried-oxide and also III-V and 2D materials are discussed, highlighting the transistor characteristics that are influenced by these boosters. A brief comparison of the two main contenders in continuing Moore’s law, ultra-thin body buried-oxide and fin field-effect transistors are also presented. The authors would like to mention that despite extensive research carried out in the semiconductor industry, silicon-based MOSFET will continue to be the driving force in the foreseeable future.

Comparison of the ANSI, RSD, KKH, and BRMD thyroid-neck phantoms for 125I thyroid monitoring.

PubMed

Kramer, G H; Olender, G; Vlahovich, S; Hauck, B M; Meyerhof, D P

1996-03-01

The Human Monitoring Laboratory, which acts as the Canadian National Calibration Reference Centre for In Vivo Monitoring, has determined the performance characteristics of four thyroid phantoms for 125I thyroid monitoring. The phantoms were a phantom built to the specifications of the American National Standards Institute Standard N44.3; the phantom available from Radiology Support Devices; the phantom available from Kyoto Kagaku Hyohon; the phantom manufactured by the Human Monitoring Laboratory and known as the BRMD phantom. The counting efficiencies of the phantoms for 125I were measured at different phantom-to-detector distances. The anthropomorphic characteristics of the phantoms have been compared with the average man parameters. It was concluded that the BRMD, American National Standards Institute, and Radiology Support Devices phantoms have the same performance characteristics when the neck-to-detector distances are greater than 12 cm and all phantoms are essentially equivalent at 30 cm or more. The Kyoto Kagaku Hyohon phantom showed lower counting efficiencies at phantom-to-detector distances less than 30 cm. This was attributed to the design of the phantom. This study has also shown that the phantom need not be highly anthropomorphic provided the calibration is not performed at short neck-detector distances. Indeed, it might be possible to use t simple point source of 125I placed behind a 1.5 cm block of lucite at neck detector distances of 12 cm or more.

A study of effects of electrode contacts on performance of organic-based light-emitting field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Dae-Kyu; Choi, Jong-Ho

2018-02-01

Herein is presented a comparative performance analysis of heterojunction organic-based light-emitting field-effect transistors (OLEFETs) with symmetric (Au only) and asymmetric (Au and LiF/Al) electrode contacts. The devices had a top source-drain contact with long-channel geometry and were produced by sequentially depositing p-type pentacene and n-type N,N‧-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) using a neutral cluster beam deposition apparatus. The spectroscopic, structural and morphological properties of the organic thin films were examined using photoluminescence (PL) spectroscopy, X-ray diffraction (XRD) method, laser scanning confocal and atomic force microscopy (LSCM, AFM). Based upon the growth of high-quality, well-packed crystalline thin films, the devices demonstrated ambipolar field-effect characteristics, stress-free operational stability, and light emission under ambient conditions. Various device parameters were derived from the fits of the observed characteristics. The hole mobilities were nearly equal irrespective of the electrode contacts, whereas the electron mobilities of the transistors with LiF/Al drain electrodes were higher due to the low injection barrier. For the OLEFETs with symmetric electrodes, electroluminescence (EL) occurred only in the vicinity of the hole-injecting electrode, whereas for the OLEFETs with asymmetric electrodes, the emission occurred in the vicinity of both hole- and electron-injecting electrodes. By tuning the carrier injection and transport through high- and low-work function metals, the hole-electron recombination sites could be controlled. The operating conduction and light emission mechanism are discussed with the aid of EL images obtained using a charge-coupled device (CCD) camera.

Charge transport studies in donor-acceptor block copolymer PDPP-TNT and PC71BM based inverted organic photovoltaic devices processed in room conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, Shashi B.; Singh, Samarendra P., E-mail: samarendra.singh@snu.edu.in; Sonar, Prashant

2015-07-15

Diketopyrrolopyrole-naphthalene polymer (PDPP-TNT), a donor-acceptor co-polymer, has shown versatile behavior demonstrating high performances in organic field-effect transistors (OFETs) and organic photovoltaic (OPV) devices. In this paper we report investigation of charge carrier dynamics in PDPP-TNT, and [6,6]-phenyl C{sub 71} butyric acid methyl ester (PC71BM) bulk-heterojunction based inverted OPV devices using current density-voltage (J-V) characteristics, space charge limited current (SCLC) measurements, capacitance-voltage (C-V) characteristics, and impedance spectroscopy (IS). OPV devices in inverted architecture, ITO/ZnO/PDPP-TNT:PC71BM/MoO{sub 3}/Ag, are processed and characterized at room conditions. The power conversion efficiency (PCE) of these devices are measured ∼3.8%, with reasonably good fill-factor 54.6%. The analysis ofmore » impedance spectra exhibits electron’s mobility ∼2 × 10{sup −3} cm{sup 2}V{sup −1}s{sup −1}, and lifetime in the range of 0.03-0.23 ms. SCLC measurements give hole mobility of 1.12 × 10{sup −5} cm{sup 2}V{sup −1}s{sup −1}, and electron mobility of 8.7 × 10{sup −4} cm{sup 2}V{sup −1}s{sup −1}.« less

Electrical Characterization of the RCA CDP1822SD Random Access Memory, Volume 1, Appendix a

NASA Technical Reports Server (NTRS)

Klute, A.

1979-01-01

Electrical characteristization tests were performed on 35 RCA CDP1822SD, 256-by-4-bit, CMOS, random access memories. The tests included three functional tests, AC and DC parametric tests, a series of schmoo plots, rise/fall time screening, and a data retention test. All tests were performed on an automated IC test system with temperatures controlled by a thermal airstream unit. All the functional tests, the data retention test, and the AC and DC parametric tests were performed at ambient temperatures of 25 C, -20 C, -55 C, 85 C, and 125 C. The schmoo plots were performed at ambient temperatures of 25 C, -55 C, and 125 C. The data retention test was performed at 25 C. Five devices failed one or more functional tests and four of these devices failed to meet the expected limits of a number of AC parametric tests. Some of the schmoo plots indicated a small degree of interaction between parameters.

A flatter gallium profile for high-efficiency Cu(In,Ga)(Se,S)2 solar cell and improved robustness against sulfur-gradient variation

NASA Astrophysics Data System (ADS)

Huang, Chien-Yao; Lee, Wen-Chin; Lin, Albert

2016-09-01

Co-optimization of the gallium and sulfur profiles in penternary Cu(In,Ga)(Se,S)2 thin film solar cell and its impacts on device performance and variability are investigated in this work. An absorber formation method to modulate the gallium profiling under low sulfur-incorporation is disclosed, which solves the problem of Ga-segregation in selenization. Flatter Ga-profiles, which lack of experimental investigations to date, are explored and an optimal Ga-profile achieving 17.1% conversion efficiency on a 30 cm × 30 cm sub-module without anti-reflection coating is presented. Flatter Ga-profile gives rise to the higher Voc × Jsc by improved bandgap matching to solar spectrum, which is hard to be achieved by the case of Ga-accumulation. However, voltage-induced carrier collection loss is found, as evident from the measured voltage-dependent photocurrent characteristics based on a small-signal circuit model. The simulation results reveal that the loss is attributed to the synergistic effect of the detrimental gallium and sulfur gradients, which can deteriorate the carrier collection especially in quasi-neutral region (QNR). Furthermore, the underlying physics is presented, and it provides a clear physical picture to the empirical trends of device performance, I-V characteristics, and voltage-dependent photocurrent, which cannot be explained by the standard solar circuit model. The parameter "FGa" and front sulfur-gradient are found to play critical roles on the trade-off between space charge region (SCR) recombination and QNR carrier collection. The co-optimized gallium and sulfur gradients are investigated, and the corresponding process modification for further efficiency-enhancement is proposed. In addition, the performance impact of sulfur-gradient variation is studied, and a gallium design for suppressing the sulfur-induced variability is proposed. Device performances of varied Ga-profiles with front sulfur-gradients are simulated based on a compact device model. Finally, an exploratory path toward 20% high-efficiency Ga-profile with robustness against sulfur-induced performance variability is presented.

A suite of phantom-based test methods for assessing image quality of photoacoustic tomography systems

NASA Astrophysics Data System (ADS)

Vogt, William C.; Jia, Congxian; Wear, Keith A.; Garra, Brian S.; Pfefer, T. Joshua

2017-03-01

As Photoacoustic Tomography (PAT) matures and undergoes clinical translation, objective performance test methods are needed to facilitate device development, regulatory clearance and clinical quality assurance. For mature medical imaging modalities such as CT, MRI, and ultrasound, tissue-mimicking phantoms are frequently incorporated into consensus standards for performance testing. A well-validated set of phantom-based test methods is needed for evaluating performance characteristics of PAT systems. To this end, we have constructed phantoms using a custom tissue-mimicking material based on PVC plastisol with tunable, biologically-relevant optical and acoustic properties. Each phantom is designed to enable quantitative assessment of one or more image quality characteristics including 3D spatial resolution, spatial measurement accuracy, ultrasound/PAT co-registration, uniformity, penetration depth, geometric distortion, sensitivity, and linearity. Phantoms contained targets including high-intensity point source targets and dye-filled tubes. This suite of phantoms was used to measure the dependence of performance of a custom PAT system (equipped with four interchangeable linear array transducers of varying design) on design parameters (e.g., center frequency, bandwidth, element geometry). Phantoms also allowed comparison of image artifacts, including surface-generated clutter and bandlimited sensing artifacts. Results showed that transducer design parameters create strong variations in performance including a trade-off between resolution and penetration depth, which could be quantified with our method. This study demonstrates the utility of phantom-based image quality testing in device performance assessment, which may guide development of consensus standards for PAT systems.

Effect of filling ratio and orientation on the thermal performance of closed loop pulsating heat pipe using ethanol

NASA Astrophysics Data System (ADS)

Rahman, Md. Lutfor; Chowdhury, Mehrin; Islam, Nawshad Arslan; Mufti, Sayed Muhammad; Ali, Mohammad

2016-07-01

Pulsating heat pipe (PHP) is a new, promising yet ambiguous technology for effective heat transfer of microelectronic devices where heat is carried by the vapor plugs and liquid slugs of the working fluid. The aim of this research paper is to better understand the operation of PHP through experimental investigations and obtain comparative results for different parameters. A series of experiments are conducted on a closed loop PHP (CLPHP) with 8 loops made of copper capillary tube of 2 mm inner diameter. Ethanol is taken as the working fluid. The operating characteristics are studied for the variation of heat input, filling ratio (FR) and orientation. The filling ratios are 40%, 50%, 60% and 70% based on its total volume. The orientations are 0° (vertical), 30°, 45° and 60°. The results clearly demonstrate the effect of filling ratio and inclination angle on the performance, operational stability and heat transfer capability of ethanol as working fluid of CLPHP. Important insight of the operational characteristics of CLPHP is obtained and optimum performance of CLPHP using ethanol is thus identified. Ethanol works best at 50-60%FR at wide range of heat inputs. At very low heat inputs, 40%FR can be used for attaining a good performance. Filling ratio below 40%FR is not suitable for using in CLPHP as it gives a low performance. The optimum performance of the device can be obtained at vertical position.

Physical Modeling of the Polyfrequency Filter-Compensating Device Based on the Capacitor-Coil

NASA Astrophysics Data System (ADS)

Butyrin, P. A.; Gusev, G. G.; Mikheev, D. V.; Shakirzianov, F. N.

2017-12-01

The paper presents the results of physical modeling and experimental study of the frequency characteristics of the polyfrequency filter-compensating device (PFCD) based on a capacitor-coil. The amplitude- frequency and phase-frequency characteristics of the physical PFCD model were constructed and its equivalent parameters were identified. The feasibility of a PFCD in the form of a single technical device with high technical and economic characteristics was experimentally proven. In the paper, recommendations for practical applications of the capacitor-coil-based PFCD are made and the advantages of the device over known standard passive filter-compensating devices are evaluated.

Above room temperature operation of InGaAs/AlGaAs/GaAs quantum cascade lasers

NASA Astrophysics Data System (ADS)

Pierścińska, D.; Gutowski, P.; Hałdaś, G.; Kolek, A.; Sankowska, I.; Grzonka, J.; Mizera, J.; Pierściński, K.; Bugajski, M.

2018-03-01

In this work we report on the performance of mid-infrared quantum cascade lasers (QCLs) based on strained InGaAs/AlGaAs grown by molecular beam epitaxy on GaAs substrate. Structures were grown with indium content from 1% to 6% in GaAs quantum wells (QW) and 45% of Al in AlGaAs barrier layers. The design results in strained heterostructure, however, no strain relaxation was observed as documented by x-ray diffraction measurements up to ∼3% of In content in QWs. The investigation of heterostructures and devices was performed, including structural measurements and electrooptical characterization of devices. Devices fabricated from epi wafers with 2.64% of In exhibited performance largely improved over GaAs/AlGaAs QCLs. Roughly two times reduction of the threshold current density was observed at lasing wavelength ∼9.45 μm. The lasers operated in pulsed mode up to T = 50 °C with characteristic temperature T 0 = 115 K. The decrease of the threshold current density has been mainly attributed to the reduction of interface roughness scattering and the increase of activation energy for the escape of carriers from the upper laser level to the 3D continuum. Further increase of In content in QWs resulted in the deterioration of device parameters.

Performance analysis of SiGe double-gate N-MOSFET

NASA Astrophysics Data System (ADS)

Singh, A.; Kapoor, D.; Sharma, R.

2017-04-01

The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate (SG) MOSFETs but also provides the better replacement for future technology. In this paper, the electrical characteristics of SiGe double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFET. Furthermore, in this paper the electrical characteristics of Si double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFET. The simulations are carried out for the device at different operational voltages using Cogenda Visual TCAD tool. Moreover, we have designed its structure and studied both {I}{{d}}{-}{V}{{g}} characteristics for different voltages namely 0.05, 0.1, 0.5, 0.8, 1 and 1.5 V and {I}{{d}}{-}{V}{{d}} characteristics for different voltages namely 0.1, 0.5, 1 and 1.5 V at work functions 4.5, 4.6 and 4.8 eV for this structure. The performance parameters investigated in this paper are threshold voltage, DIBL, subthreshold slope, GIDL, volume inversion and MMCR.

Polymer coating behavior of Rayleigh-SAW resonators with gold electrode structure for gas sensor applications.

PubMed

Avramov, Ivan D; Länge, Kerstin; Rupp, Swen; Rapp, Bastian; Rapp, Michael

2007-01-01

Results from systematic polymer coating experiments on surface acoustic wave (SAW) resonators and coupled resonator filters (CRF) on ST-cut quartz with a corrosion-proof electrode structure entirely made of gold (Au) are presented and compared with data from similar SAW devices using aluminium (Al) electrodes. The recently developed Au devices are intended to replace their earlier Al counterparts in sensor systems operating in highly reactive chemical gas environments. Solid parylene C and soft poly[chlorotrifluoroethylene-co-vinylidene fluoride] (PCFV) polymer films are deposited under identical conditions onto the surface of Al and Au devices. The electrical performance of the Parylene C coated devices is monitored online during film deposition. The PCVF coated devices are evaluated after film deposition. The experimental data show that the Au devices can stand up to 40% thicker solid films for the same amount of loss increase than the Al devices and retain better resonance and phase characteristics. The frequency sensitivities of Au and Al devices to parylene C deposition are nearly identical. After coating with soft PCFV sensing film, the Au devices provide up to two times higher gas sensitivity when probed with cooling agent, octane, or tetrachloroethylene.

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

NASA Astrophysics Data System (ADS)

Cha, Giho; Kim, Youngchul; Jang, Hyungwoo; Kang, Hyunsoon; Song, Changsub

2001-10-01

Silicon direct bonding technique was successfully applied for the fabrication of high voltage IGBT (Insulated Gate Bipolar Transistor). In this work, 5 inch, p-type CZ wafer for handle wafer and n-type FZ wafer for device wafer were used and bonding the two wafers was performed at reduced pressure (1mmTorr) using a modified vacuum bonding machine. Since the breakdown voltage in high voltage device has been determined by the remained thickness of device layer, grinding and CMP steps should be carefully designed in order to acquire better uniformity of device layer. In order to obtain the higher removal rate and the final better uniformity of device layer, the harmony of the two processes must be considered. We found that the concave type of grinding profile and the optimal thickness of ground wafer was able to reduce the process time of CMP step and also to enhance the final thickness uniformity of device layer up to +/- 1%. Finally, when compared epitaxy layer with SDB wafer, the SDB wafer was found to be more favorable in terms of cost and electrical characteristics.

Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

NASA Astrophysics Data System (ADS)

Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

2016-09-01

Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

Preclinical testing for aortic endovascular grafts: results of a Food and Drug Administration workshop.

PubMed

Abel, Dorothy B; Beebe, Hugh G; Dedashtian, Mark M; Morton, Michael C; Moynahan, Megan; Smith, Loius J; Weinberg, Steven L

2002-05-01

Since their introduction into clinical trials in the United States, endovascular aortic grafts have shown various types of problems. Although details of design and construction vary between different endovascular grafts and failure modes have had a variety of causes and clinical effects, the inability of preclinical testing to predict these failures remains common to all endovascular grafts. The need to improve preclinical testing in an attempt to reduce clinical device failures resulted in a Food and Drug Administration-sponsored workshop on endovascular graft preclinical testing held in Rockville, Md, from July 31 to August 1, 2001. FORMAT: The workshop was not designed as a consensus conference. Instead, it provided a forum for bringing stakeholders together to define problems and identify areas of agreement and disagreement. The workshop had 34 invited participants who represented device manufacturers, the medical community, the Food and Drug Administration, and testing facilities, and international attendance was more than 120 people. Discussion centered on: 1, defining the physiologic, anatomic, and morphologic characteristics of abdominal aortic aneurysms before and after endovascular graft treatment; 2, identifying the types of failures that have been observed clinically; and 3, determining which characteristics should be considered during preclinical modeling to better predict clinical performance. Attendees agreed to the need to better define and address anatomic characteristics and changes in the aneurysm after endograft treatment to optimize preclinical testing. Much discussion and little agreement occurred on the importance of flow-related forces on graft performance or the need or ability to define and model physiologic compliance during durability testing. The discussion and conclusions are summarized in this paper and are provided in detail at: http://www.fda.gov/cdrh/meetings/073101workshop.html. The workshop raised awareness of significant performance issues and the challenges of modeling the extremely variable and relatively undefined environment of abdominal aortic aneurysms. Through the interactive format of the workshop, participants identified areas of preclinical testing, device design, and aspects of the simulated environment that need further consideration.

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

NASA Astrophysics Data System (ADS)

Chen, C.; Gao, S.; Zeng, F.; Tang, G. S.; Li, S. Z.; Song, C.; Fu, H. D.; Pan, F.

2013-07-01

Oxides-based resistive switching memory induced by oxygen ions migration is attractive for future nonvolatile memories. Numerous works had focused their attentions on the sandwiched oxide materials for depressing the characteristic variations, but the comprehensive studies of the dependence of electrodes on the migration behavior of oxygen ions are overshadowed. Here, we investigated the interaction of various metals (Ni, Co, Al, Ti, Zr, and Hf) with oxygen atoms at the metal/Ta2O5 interface under electric stress and explored the effect of top electrode on the characteristic variations of Ta2O5-based memory device. It is demonstrated that chemically inert electrodes (Ni and Co) lead to the scattering switching characteristics and destructive gas bubbles, while the highly chemically active metals (Hf and Zr) formed a thick and dense interfacial intermediate oxide layer at the metal/Ta2O5 interface, which also degraded the resistive switching behavior. The relatively chemically active metals (Al and Ti) can absorb oxygen ions from the Ta2O5 film and avoid forming the problematic interfacial layer, which is benefit to the formation of oxygen vacancies composed conduction filaments in Ta2O5 film thus exhibit the minimum variations of switching characteristics. The clarification of oxygen ions migration behavior at the interface can lead further optimization of resistive switching performance in Ta2O5-based memory device and guide the rule of electrode selection for other oxide-based resistive switching memories.

Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

NASA Astrophysics Data System (ADS)

Han, Ki-Lim; Ok, Kyung-Chul; Cho, Hyeon-Su; Oh, Saeroonter; Park, Jin-Seong

2017-08-01

We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TFTs with a multi-layered buffer suffer less positive bias temperature stress instability compared to the device with a single SiO2 buffer layer after annealing at 250 °C. Hydrogen from the SiNx layer diffuses into the active layer and reduces electron trapping at loosely bound oxygen defects near the SiO2/a-IGZO interface. Quantitative analysis shows that a hydrogen density of 1.85 × 1021 cm-3 is beneficial to reliability. However, the multi-layered buffer device annealed at 350 °C resulted in conductive characteristics due to the excess carrier concentration from the higher hydrogen density of 2.12 × 1021 cm-3.

Effect of traps on the charge transport in semiconducting polymer PCDTBT

NASA Astrophysics Data System (ADS)

Khan, Mohd Taukeer; Agrawal, Vikash; Almohammedi, Abdullah; Gupta, Vinay

2018-07-01

Organic semiconductors (OSCs) are nowadays called upon as promising candidates for next generation electronics devices. Due to disorder structure of these materials, a high density of traps are present in their energy band gap which affect the performance of these devices. In the present manuscript, we have investigated the role of traps on charge transport in PCDTBT thin film by measuring the temperature dependent J(V) characteristics in hole only device configuration. The obtained results were analyzed by space charge limited (SCL) conduction model. It has been found that the room temperature J(V) characteristics follow Mott-Gurney square law for trap-free SCL conduction. But below 278 K, the current increases according to trap-filling SCL law with traps distributed exponentially in the band gap of semiconductor. Furthermore, after reaching a crossover voltage of VC ∽ 12 V, all the traps filled by injected carriers and the trap-filling SCL current switch to trap-free SCL current. The hole mobility of trap-free SCL current is about one order higher as compared trap-filling SCL current and remains constant with temperature.

Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits

NASA Astrophysics Data System (ADS)

Sporea, R. A.; Trainor, M. J.; Young, N. D.; Shannon, J. M.; Silva, S. R. P.

2014-03-01

Ultra-large-scale integrated (ULSI) circuits have benefited from successive refinements in device architecture for enormous improvements in speed, power efficiency and areal density. In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained static. Now, a device concept with fundamentally different operation, the source-gated transistor (SGT) opens the possibility of unprecedented functionality in future low-cost LAE. With its simple structure and operational characteristics of low saturation voltage, stability under electrical stress and large intrinsic gain, the SGT is ideally suited for LAE analog applications. Here, we show using measurements on polysilicon devices that these characteristics lead to substantial improvements in gain, noise margin, power-delay product and overall circuit robustness in digital SGT-based designs. These findings have far-reaching consequences, as LAE will form the technological basis for a variety of future developments in the biomedical, civil engineering, remote sensing, artificial skin areas, as well as wearable and ubiquitous computing, or lightweight applications for space exploration.

Closed-loop control of a core free rolled EAP actuator

NASA Astrophysics Data System (ADS)

Sarban, Rahimullah; Oubaek, Jakob; Jones, Richard W.

2009-03-01

Tubular dielectric electro-active polymer actuators, also referred as tubular InLastors, have many possible applications. One of the most obvious is as a positioning push-type device. This work examines the feedback closed-loop control of a core-free tubular InLastor fabricated from sheets of PolyPowerTM, an EAP material developed by Danfoss PolyPower A/S, which uses a silicone elastomer in conjunction with smart compliant electrode technology. This is part of an ongoing study to develop a precision positioning feedback control system for this device. Initially proportional and integral (PI) control is considered to provide position control of the tubular InLastor. Control of the tubular Inlastors require more than conventional control, used for linear actuators, because the InLastors display highly nonlinear static voltage-strain and voltage-force characteristics as well as dynamic hysteresis and time-dependent strain behavior. In an attempt to overcome the nonlinear static voltage-strain characteristics of the Inlastors and for improving the dynamic performance of the controlled device, a gain scheduling algorithm is then integrated into the PI controlled system.

Effect of Topology Structure on the Output Performance of an Automobile Exhaust Thermoelectric Generator

NASA Astrophysics Data System (ADS)

Fang, W.; Quan, S. H.; Xie, C. J.; Ran, B.; Li, X. L.; Wang, L.; Jiao, Y. T.; Xu, T. W.

2017-05-01

The majority of the thermal energy released in an automotive internal combustion cycle is exhausted as waste heat through the tail pipe. This paper describes an automobile exhaust thermoelectric generator (AETEG), designed to recycle automobile waste heat. A model of the output characteristics of each thermoelectric device was established by testing their open circuit voltage and internal resistance, and combining the output characteristics. To better describe the relationship, the physical model was transformed into a topological model. The connection matrix was used to describe the relationship between any two thermoelectric devices in the topological structure. Different topological structures produced different power outputs; their output power was maximised by using an iterative algorithm to optimize the series-parallel electrical topology structure. The experimental results have shown that the output power of the optimal topology structure increases by 18.18% and 29.35% versus that of a pure in-series or parallel topology, respectively, and by 10.08% versus a manually defined structure (based on user experience). The thermoelectric conversion device increased energy efficiency by 40% when compared with a traditional car.

[A capillary blood flow velocity detection system based on linear array charge-coupled devices].

PubMed

Zhou, Houming; Wang, Ruofeng; Dang, Qi; Yang, Li; Wang, Xiang

2017-12-01

In order to detect the flow characteristics of blood samples in the capillary, this paper introduces a blood flow velocity measurement system based on field-programmable gate array (FPGA), linear charge-coupled devices (CCD) and personal computer (PC) software structure. Based on the analysis of the TCD1703C and AD9826 device data sheets, Verilog HDL hardware description language was used to design and simulate the driver. Image signal acquisition and the extraction of the real-time edge information of the blood sample were carried out synchronously in the FPGA. Then a series of discrete displacement were performed in a differential operation to scan each of the blood samples displacement, so that the sample flow rate could be obtained. Finally, the feasibility of the blood flow velocity detection system was verified by simulation and debugging. After drawing the flow velocity curve and analyzing the velocity characteristics, the significance of measuring blood flow velocity is analyzed. The results show that the measurement of the system is less time-consuming and less complex than other flow rate monitoring schemes.

Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

NASA Astrophysics Data System (ADS)

Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

2012-11-01

We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

Effects of Gold Nanoparticles on Pentacene Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Lee, Keanchuan; Weis, Martin; Ou-Yang, Wei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-04-01

The effect of gold nanoparticles (NPs) on pentacene organic field-effect transistors (OFETs) was being investigated by both DC and AC methods, which are current-voltage (I-V) measurements in steady-state and impedance spectroscopy (IS) respectively. Here poly(vinyl alcohol) (PVA) and PVA blended with Au NPs as composite are spin-coated on SiO2 as gate-insulator for top-contact pentacene OFET. The characteristics of the device were being investigated based on the contact resistance, trapped charges, effective mobility and threshold voltage based on transfer characteristics of OFET. Results revealed that OFET with NPs exhibited larger hysteresis and higher contact resistance at high voltage region. IS measurements were performed and the fitting of results by the Maxwell-Wagner equivalent circuit showed that for device with NPs a series of capacitance and resistance which represents trapping must be introduced in order to have agreeable fitting. The fitting had helped to clarify the reason behind the higher contact resistance and bigger hysteresis which was mainly caused by the space charge field formed by the traps when Au NPs were introduced into the device.

All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

PubMed Central

Bae, Yoon Cheol; Lee, Ah Rahm; Baek, Gwang Ho; Chung, Je Bock; Kim, Tae Yoon; Park, Jea Gun; Hong, Jin Pyo

2015-01-01

Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes. PMID:26289565

Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits

PubMed Central

Sporea, R. A.; Trainor, M. J.; Young, N. D.; Shannon, J. M.; Silva, S. R. P.

2014-01-01

Ultra-large-scale integrated (ULSI) circuits have benefited from successive refinements in device architecture for enormous improvements in speed, power efficiency and areal density. In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained static. Now, a device concept with fundamentally different operation, the source-gated transistor (SGT) opens the possibility of unprecedented functionality in future low-cost LAE. With its simple structure and operational characteristics of low saturation voltage, stability under electrical stress and large intrinsic gain, the SGT is ideally suited for LAE analog applications. Here, we show using measurements on polysilicon devices that these characteristics lead to substantial improvements in gain, noise margin, power-delay product and overall circuit robustness in digital SGT-based designs. These findings have far-reaching consequences, as LAE will form the technological basis for a variety of future developments in the biomedical, civil engineering, remote sensing, artificial skin areas, as well as wearable and ubiquitous computing, or lightweight applications for space exploration. PMID:24599023

Automation of a Versatile Crane (the LSMS) for Lunar Outpost Construction, Maintenance and Inspection

NASA Technical Reports Server (NTRS)

Doggett, William R.; Roithmayr, Carlos M.; Dorsey, John T.; Jones, Thomas C.; Shen, Haijun; Seywald, Hans; King, Bruce D.; Mikulas, Martin M., Jr.

2009-01-01

Devices for lifting, translating and precisely placing payloads are critical for efficient Earth-based construction operations. Both recent and past studies have demonstrated that devices with similar functionality will be needed to support lunar outpost operations. Although several designs have been developed for Earth based applications, these devices lack unique design characteristics necessary for transport to and use on the harsh lunar surface. These design characteristics include: a) lightweight components, b) compact packaging for launch, c) automated deployment, d) simple in-field reconfiguration and repair, and e) support for tele-operated or automated operations. Also, because the cost to transport mass to the lunar surface is very high, the number of devices that can be dedicated to surface operations will be limited. Thus, in contrast to Earth-based construction, where many single-purpose devices dominate a construction site, a lunar outpost will require a limited number of versatile devices that provide operational benefit from initial construction through sustained operations. The first generation test-bed of a new high performance device, the Lunar Surface Manipulation System (LSMS) has been designed, built and field tested. The LSMS has many unique features resulting in a mass efficient solution to payload handling on the lunar surface. Typically, the LSMS device mass is estimated at approximately 3% of the mass of the heaviest payload lifted at the tip, or 1.8 % of the mass of the heaviest mass lifted at the elbow or mid-span of the boom for a high performance variant incorporating advanced structural components. Initial operational capabilities of the LSMS were successfully demonstrated during field tests at Moses Lake, Washington using a tele-operated approach. Joint angle sensors have been developed for the LSMS to improve operator situational awareness. These same sensors provide the necessary information to support fully automated operations, greatly expanding the operational versatility of the LSMS. This paper develops the equations describing the forward and inverse relation between LSMS joint angles and Cartesian coordinates of the LSMS tip. These equations allow a variety of schemes to be used to maneuver the LSMS to optimize the maneuver. One such scheme will be described in detail that eliminates undesirable swinging of the payload at the conclusion of a maneuver, even when the payload is suspended from a passive rigid link. The swinging is undesirable when performing precision maneuvers, such as aligning an object for mating or positioning a camera. Use of the equations described here enables automated control of the LSMS greatly improving its operational versatility.

Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application

NASA Astrophysics Data System (ADS)

Cho, Seongjae; Man Kang, In; Rok Kim, Kyung; Park, Byung-Gook; Harris, James S.

2013-11-01

In this work, Ge-based high-hole-mobility transistor with Si compatibility is designed, and its performance is evaluated. A 2-dimensional hole gas is effectively constructed by a AlGaAs/Ge/Si heterojunction with a sufficiently large valence band offset. Moreover, an intrinsic Ge channel is exploited so that high hole mobility is preserved without dopant scattering. Effects of design parameters such as gate length, Ge channel thickness, and aluminum fraction in the barrier material on device characteristics are thoroughly investigated through device simulations. A high on-current above 30 μA/μm along with a low subthreshold swing was obtained from an optimized planar device for low-power applications.

Application and Design Characteristics of Generalized Training Devices.

ERIC Educational Resources Information Center

Parker, Edward L.

This program identified applications and developed design characteristics for generalized training devices. The first of three sequential phases reviewed in detail new developments in Naval equipment technology that influence the design of maintenance training devices: solid-state circuitry, modularization, digital technology, standardization,…

Realizing 11.3% efficiency in PffBT4T-2OD fullerene organic solar cells via superior charge extraction at interfaces

NASA Astrophysics Data System (ADS)

Xu, Cheng; Wright, Matthew; Elumalai, Naveen Kumar; Mahmud, Md Arafat; Wang, Dian; Gonçales, Vinicius R.; Upama, Mushfika Baishakhi; Haque, Faiazul; Gooding, J. Justin; Uddin, Ashraf

2018-06-01

The influence of interface engineering on the performance and photovoltaic properties of the PffBT4T-2OD poly[(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)-alt-(3,3'''-di(2-octyldodecyl)-2,2';5',2″;5″,2'''-quaterthiophen-5,5'''-diy)] based polymer solar cells (PSCs) are investigated. Owing to the high crystallinity and processing parameter dependent morphology distribution of the PffBT4T-2OD polymer, the performance of the devices can vary significantly with power conversion efficiency (PCE) of around 10% has been reported via such morphology modification. In this work, we demonstrate the effect of trap state passivation at the electron transport layer (ETL)/Polymer interface on the performance of PffBT4T-2OD based PSCs. Aluminium doped ZnO (AZO) and pristine Zinc Oxide (ZnO) are employed as ETLs, which modified the polymer wettability and blend morphology. The interface engineered devices exhibited high PCE of over 11% with high J sc of about 22.5 mA/cm2 which is about 19% higher than that of the conventional ZnO based devices. The reason behind such distinct enhancements is investigated using several material and device characterization methods including electrochemical impedance spectroscopy (EIS). The recombination resistance ( R rec) of the AZO based device is found to be 4.5 times higher than that of the ZnO devices. The enhanced photovoltaic parameters of the AZO based device are attributed to the superior charge transport characteristics in the ETL as well as at the ETL/polymer interface, enabling effective charge extraction at the respective electrodes with much lesser recombination. The mechanism and the processes behind such enhancements are also elaborated in detail.