Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

NASA Astrophysics Data System (ADS)

Papatryfonos, Konstantinos; Saladukha, Dzianis; Merghem, Kamel; Joshi, Siddharth; Lelarge, Francois; Bouchoule, Sophie; Kazazis, Dimitrios; Guilet, Stephane; Le Gratiet, Luc; Ochalski, Tomasz J.; Huyet, Guillaume; Martinez, Anthony; Ramdane, Abderrahim

2017-02-01

Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ˜ 40 cm-1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers.

GaSb-based single-mode distributed feedback lasers for sensing (Conference Presentation)

NASA Astrophysics Data System (ADS)

Gupta, James A.; Bezinger, Andrew; Lapointe, Jean; Poitras, Daniel; Aers, Geof C.

2017-02-01

GaSb-based tunable single-mode diode lasers can enable rapid, highly-selective and highly-sensitive absorption spectroscopy systems for gas sensing. In this work, single-mode distributed feedback (DFB) laser diodes were developed for the detection of various trace gases in the 2-3.3um range, including CO2, CO, HF, H2S, H2O and CH4. The lasers were fabricated using an index-coupled grating process without epitaxial regrowth, making the process significantly less expensive than conventional DFB fabrication. The devices are based on InGaAsSb/AlGaAsSb separate confinement heterostructures grown on GaSb by molecular beam epitaxy. DFB lasers were produced using a two step etch process. Narrow ridge waveguides were first defined by optical lithography and etched into the semiconductor. Lateral gratings were then defined on both sides of the ridge using electron-beam lithography and etched to produce the index-grating. Effective index modeling was used to optimize the ridge width, etch depths and the grating pitch to ensure single-lateral-mode operation and adequate coupling strength. The effective index method was further used to simulate the DFB laser emission spectrum, based on a transfer matrix model for light transmission through the periodic structure. The fabricated lasers exhibit single-mode operation which is tunable through the absorption features of the various target gases by adjustment of the drive current. In addition to the established open-path sensing applications, these devices have great potential for optoelectronic integrated gas sensors, making use of integrated photodetectors and possibly on-chip Si photonics waveguide structures.

Qualification of an evaluated butterfly-packaged DFB laser designed for space applications

NASA Astrophysics Data System (ADS)

Tornow, S.; Stier, C.; Buettner, T.; Laurent, T.; Kneier, M.; Bru, J.; Lien, Y.

2017-11-01

An extended qualification program has proven the quality of a previously evaluated semiconductor laser diode, which is intended to be used in a subsystem for the GAIA mission. We report on results of several reliability tests performed in subgroups. The requirements of the procurement specification with respect to reliability and desired manufacturing processes were confirmed. This is an example for successful collaboration between component supplier, system integrator and payload responsible party.

A novel approach to photonic generate microwave signals based on optical injection locking and four-wave mixing

NASA Astrophysics Data System (ADS)

Zhu, Huatao; Wang, Rong; Xiang, Peng; Pu, Tao; Fang, Tao; Zheng, Jilin; Li, Yuandong

2017-10-01

In this paper, a novel approach for photonic generation of microwave signals based on frequency multiplication using an injected distributed-feedback (DFB) semiconductor laser is proposed and demonstrated by a proof-of-concept experiment. The proposed system is mainly made up of a dual-parallel Mach-Zehnder modulator (DPMZM) and an injected DFB laser. By properly setting the bias voltage of the DPMZM, ±2-order sidebands with carrier suppression are generated, which are then injected into the slave laser. Due to the optical sideband locking and four-wave mixing (FWM) nonlinearity in the slave laser, new sidebands are generated. Then these sidebands are sent to an optical notch filter where all the undesired sidebands are removed. Finally, after photodetector detection, frequency multiplied microwave signals can be generated. Thanks to the flexibility of the optical sideband locking and FWM, frequency octupling, 12-tupling, 14-tupling and 16-tupling can be obtained.

Time stretch dispersive Fourier transform based single-shot pulse-by-pulse spectrum measurement using a pulse-repetition-frequency-variable gain-switched laser

NASA Astrophysics Data System (ADS)

Furukawa, Hideaki; Makino, Takeshi; Wang, Xiaomin; Kobayashi, Tetsuya; Asghari, Mohammad H.; Trinh, Paul; Jalali, Bahram; Man, Wai Sing; Tsang, Kwong Shing; Wada, Naoya

2018-02-01

The time stretch dispersive Fourier Transform (TS-DFT) technique based on a fiber chromatic dispersion is a powerful tool for pulse-by-pulse single-shot spectrum measurement for highrepetition rate optical pulses. The distributed feedback laser diode (DFB-LD) with the gain switch operation can flexibly change the pulse repetition frequency (PRF). In this paper, we newly introduce a semiconductor gain-switched DFB-LD operating from 1 MHz up to 1 GHz PRF into the TS-DFT based spectrum measurement system to improve the flexibility and the operability. The pulse width can be below 2 ps with a pulse compression technique. We successfully measure the spectrum of each optical pulse at 1 GHz, 100 MHz, and 10 MHz PRF, and demonstrate the flexibility of the measurement system.

All-optical logic gates and wavelength conversion via the injection locking of a Fabry-Perot semiconductor laser

NASA Astrophysics Data System (ADS)

Harvey, E.; Pochet, M.; Schmidt, J.; Locke, T.; Naderi, N.; Usechak, N. G.

2013-03-01

This work investigates the implementation of all-optical logic gates based on optical injection locking (OIL). All-optical inverting, NOR, and NAND gates are experimentally demonstrated using two distributed feedback (DFB) lasers, a multi-mode Fabry-Perot laser diode, and an optical band-pass filter. The DFB lasers are externally modulated to represent logic inputs into the cavity of the multi-mode Fabry-Perot slave laser. The input DFB (master) lasers' wavelengths are aligned with the longitudinal modes of the Fabry-Perot slave laser and their optical power is used to modulate the injection conditions in the Fabry-Perot slave laser. The optical band-pass filter is used to select a Fabry- Perot mode that is either suppressed or transmitted given the logic state of the injecting master laser signals. When the input signal(s) is (are) in the on state, injection locking, and thus the suppression of the non-injected Fabry-Perot modes, is induced, yielding a dynamic system that can be used to implement photonic logic functions. Additionally, all-optical photonic processing is achieved using the cavity-mode shift produced in the injected slave laser under external optical injection. The inverting logic case can also be used as a wavelength converter — a key component in advanced wavelength-division multiplexing networks. As a result of this experimental investigation, a more comprehensive understanding of the locking parameters involved in injecting multiple lasers into a multi-mode cavity and the logic transition time is achieved. The performance of optical logic computations and wavelength conversion has the potential for ultrafast operation, limited primarily by the photon decay rate in the slave laser.

All-optical noise reduction of fiber laser via intracavity SOA structure.

PubMed

Ying, Kang; Chen, Dijun; Pan, Zhengqing; Zhang, Xi; Cai, Haiwen; Qu, Ronghui

2016-10-10

We have designed a unique intracavity semiconductor optical amplifier (SOA) structure to suppress the relative intensity noise (RIN) for a fiber DFB laser. By exploiting the gain saturation effect of the SOA, a maximum noise suppression of 30 dB around the relaxation oscillation frequency is achieved, and the whole resonance relaxation oscillation peak completely disappears. Moreover, via a specially designed intracavity SOA structure, the optical intensity inside the SOA will be in a balanced state via the oscillation in the laser cavity, and the frequency noise of the laser will not be degraded with the SOA.

DFB laser array driver circuit controlled by adjustable signal

NASA Astrophysics Data System (ADS)

Du, Weikang; Du, Yinchao; Guo, Yu; Li, Wei; Wang, Hao

2018-01-01

In order to achieve the intelligent controlling of DFB laser array, this paper presents the design of an intelligence and high precision numerical controlling electric circuit. The system takes MCU and FPGA as the main control chip, with compact, high-efficiency, no impact, switching protection characteristics. The output of the DFB laser array can be determined by an external adjustable signal. The system transforms the analog control model into a digital control model, which improves the performance of the driver. The system can monitor the temperature and current of DFB laser array in real time. The output precision of the current can reach ± 0.1mA, which ensures the stable and reliable operation of the DFB laser array. Such a driver can benefit the flexible usage of the DFB laser array.

Transversely bounded DFB lasers. [bounded distributed-feedback lasers

NASA Technical Reports Server (NTRS)

Elachi, C.; Evans, G.; Yeh, C.

1975-01-01

Bounded distributed-feedback (DFB) lasers are studied in detail. Threshold gain and field distribution for a number of configurations are derived and analyzed. More specifically, the thin-film guide, fiber, diffusion guide, and hollow channel with inhomogeneous-cladding DFB lasers are considered. Optimum points exist and must be used in DFB laser design. Different-modes feedback and the effects of the transverse boundaries are included. A number of applications are also discussed.

Extended-bandwidth frequency sweeps of a distributed feedback laser using combined injection current and temperature modulation

NASA Astrophysics Data System (ADS)

Hefferman, Gerald; Chen, Zhen; Wei, Tao

2017-07-01

This article details the generation of an extended-bandwidth frequency sweep using a single, communication grade distributed feedback (DFB) laser. The frequency sweep is generated using a two-step technique. In the first step, injection current modulation is employed as a means of varying the output frequency of a DFB laser over a bandwidth of 99.26 GHz. A digital optical phase lock loop is used to lock the frequency sweep speed during current modulation, resulting in a linear frequency chirp. In the second step, the temperature of the DFB laser is modulated, resulting in a shifted starting laser output frequency. A laser frequency chirp is again generated beginning at this shifted starting frequency, resulting in a frequency-shifted spectrum relative to the first recorded data. This process is then repeated across a range of starting temperatures, resulting in a series of partially overlapping, frequency-shifted spectra. These spectra are then aligned using cross-correlation and combined using averaging to form a single, broadband spectrum with a total bandwidth of 510.9 GHz. In order to investigate the utility of this technique, experimental testing was performed in which the approach was used as the swept-frequency source of a coherent optical frequency domain reflectometry system. This system was used to interrogate an optical fiber containing a 20 point, 1-mm pitch length fiber Bragg grating, corresponding to a period of 100 GHz. Using this technique, both the periodicity of the grating in the frequency domain and the individual reflector elements of the structure in the time domain were resolved, demonstrating the technique's potential as a method of extending the sweeping bandwidth of semiconductor lasers for frequency-based sensing applications.

Extended-bandwidth frequency sweeps of a distributed feedback laser using combined injection current and temperature modulation.

PubMed

Hefferman, Gerald; Chen, Zhen; Wei, Tao

2017-07-01

This article details the generation of an extended-bandwidth frequency sweep using a single, communication grade distributed feedback (DFB) laser. The frequency sweep is generated using a two-step technique. In the first step, injection current modulation is employed as a means of varying the output frequency of a DFB laser over a bandwidth of 99.26 GHz. A digital optical phase lock loop is used to lock the frequency sweep speed during current modulation, resulting in a linear frequency chirp. In the second step, the temperature of the DFB laser is modulated, resulting in a shifted starting laser output frequency. A laser frequency chirp is again generated beginning at this shifted starting frequency, resulting in a frequency-shifted spectrum relative to the first recorded data. This process is then repeated across a range of starting temperatures, resulting in a series of partially overlapping, frequency-shifted spectra. These spectra are then aligned using cross-correlation and combined using averaging to form a single, broadband spectrum with a total bandwidth of 510.9 GHz. In order to investigate the utility of this technique, experimental testing was performed in which the approach was used as the swept-frequency source of a coherent optical frequency domain reflectometry system. This system was used to interrogate an optical fiber containing a 20 point, 1-mm pitch length fiber Bragg grating, corresponding to a period of 100 GHz. Using this technique, both the periodicity of the grating in the frequency domain and the individual reflector elements of the structure in the time domain were resolved, demonstrating the technique's potential as a method of extending the sweeping bandwidth of semiconductor lasers for frequency-based sensing applications.

Strained-layer indium gallium arsenide-gallium arsenide- aluminum galium arsenide photonic devices by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Osowski, Mark Louis

With the arrival of advanced growth technologies such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), research in III-V compound semiconductor photonic devices has flourished. Advances in fabrication processes have allowed the realization of high-performance quantum well lasers which emit over a wide spectral range and operate with low threshold currents. As a result, semiconductor lasers are presently employed in a wide variety of applications, including fiber-optic telecommunications, optical spectroscopy, solid-state laser pumping, and photonic integrated circuits. The work in this dissertation addresses three photonic device structures which are currently receiving a great deal of attention in the research community: integrable quantum well laser devices, distributed feedback (DFB) laser devices, and quantum wire arrays. For the realization of the integrable and integrated photonic devices described-in Chapter 2, a three-step selective-area growth technique was utilized. The selective epitaxy process was used to produce discrete buried-heterostructure Fabry Perot lasers with threshold currents as low as 2.6 mA. Based on this process, broad- spectrum edge-emitting superluminescent diodes are demonstrated which display spectral widths of over 80 nm. In addition, the monolithic integration of a multiwavelength emitter is demonstrated in which two distinct laser sources are coupled into a single output waveguide. The dissertation also describes the development of a single-growth-step ridge waveguide DFB laser. The DFB laser utilizes an asymmetric cladding waveguide structure to enhance the interaction of the optical mode with the titanium surface metal to promote single frequency emission via gain coupling. These lasers exhibit low threshold currents (11 mA), high side mode suppression ratios (50 dB), and narrow linewidths (45 kHz). In light of the substantial performance advantages of quantum well lasers relative to double heterostructure lasers, extensive efforts have been directed toward producing quantum wire systems. In view of this, the final subject of this dissertation details the fabrication and characterization of quantum wire arrays by selective-area MOCVD. The method employs a silicon dioxide grating mask with sub-micron oxide dimensions to achieve selective deposition of high-quality buried layers in the open areas of the patterned substrate. This allows the fabrication of embedded nanostructures in a single growth step, and the crystallographic nature of the growth allows for control of their lateral size. Using this process, the growth of strained InGaAs wires with a lateral dimension of less than 50 nm are obtained. Subsequent characterization by photoluminescence, scanning electron microscopy and transmission electron microscopy is also presented.

Terahertz plasmonic laser radiating in an ultra-narrow beam

DOE PAGES

Wu, Chongzhao; Khanal, Sudeep; Reno, John L.; ...

2016-07-07

Plasmonic lasers (spasers) generate coherent surface plasmon polaritons (SPPs) and could be realized at subwavelength dimensions in metallic cavities for applications in nanoscale optics. Plasmonic cavities are also utilized for terahertz quantum-cascade lasers (QCLs), which are the brightest available solid-state sources of terahertz radiation. A long standing challenge for spasers that are utilized as nanoscale sources of radiation, is their poor coupling to the far-field radiation. Unlike conventional lasers that could produce directional beams, spasers have highly divergent radiation patterns due to their subwavelength apertures. Here, we theoretically and experimentally demonstrate a new technique for implementing distributed feedback (DFB) thatmore » is distinct from any other previously utilized DFB schemes for semiconductor lasers. The so-termed antenna-feedback scheme leads to single-mode operation in plasmonic lasers, couples the resonant SPP mode to a highly directional far-field radiation pattern, and integrates hybrid SPPs in surrounding medium into the operation of the DFB lasers. Experimentally, the antenna-feedback method, which does not require the phase matching to a well-defined effective index, is implemented for terahertz QCLs, and single-mode terahertz QCLs with a beam divergence as small as 4°×4° are demonstrated, which is the narrowest beam reported for any terahertz QCL to date. Moreover, in contrast to a negligible radiative field in conventional photonic band-edge lasers, in which the periodicity follows the integer multiple of half-wavelengths inside the active medium, antenna-feedback breaks this integer limit for the first time and enhances the radiative field of the lasing mode. Terahertz lasers with narrow-beam emission will find applications for integrated as well as standoff terahertz spectroscopy and sensing. Furthermore, the antenna-feedback scheme is generally applicable to any plasmonic laser with a Fabry–Perot cavity irrespective of its operating wavelength and could bring plasmonic lasers closer to practical applications.« less

High-power, surface-emitting quantum cascade laser operating in a symmetric grating mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boyle, C.; Sigler, C.; Kirch, J. D.

2016-03-21

Grating-coupled surface-emitting (GCSE) lasers generally operate with a double-lobed far-field beam pattern along the cavity-length direction, which is a result of lasing being favored in the antisymmetric grating mode. We experimentally demonstrate a GCSE quantum-cascade laser design allowing high-power, nearly single-lobed surface emission parallel to the longitudinal cavity. A 2nd-order Au-semiconductor distributed-feedback (DFB)/distributed-Bragg-reflector (DBR) grating is used for feedback and out-coupling. The DFB and DBR grating regions are 2.55 mm- and 1.28 mm-long, respectively, for a total grating length of 5.1 mm. The lasers are designed to operate in a symmetric (longitudinal) grating mode by causing resonant coupling of the guided optical modemore » to the antisymmetric surface-plasmon modes of the 2nd-order metal/semiconductor grating. Then, the antisymmetric modes are strongly absorbed by the metal in the grating, causing the symmetric mode to be favored to lase, which, in turn, produces a single-lobed beam over a range of grating duty-cycle values of 36%–41%. Simulations indicate that the symmetric mode is always favored to lase, independent of the random phase of reflections from the device's cleaved ends. Peak pulsed output powers of ∼0.4 W were measured with nearly single-lobe beam-pattern (in the longitudinal direction), single-spatial-mode operation near 4.75 μm wavelength. Far-field measurements confirm a diffraction-limited beam pattern, in agreement with simulations, for a source-to-detector separation of 2 m.« less

Dual-wavelength DFB quantum cascade lasers: sources for multi-species trace gas spectroscopy

NASA Astrophysics Data System (ADS)

Kapsalidis, Filippos; Shahmohammadi, Mehran; Süess, Martin J.; Wolf, Johanna M.; Gini, Emilio; Beck, Mattias; Hundt, Morten; Tuzson, Béla; Emmenegger, Lukas; Faist, Jérôme

2018-06-01

We report on the design, fabrication, and performance of dual-wavelength distributed-feedback (DFB) quantum cascade lasers (QCLs) emitting at several wavelengths in the mid-infrared (mid-IR) spectrum. In this work, two new designs are presented: for the first one, called "Neighbour" DFB, two single-mode DFB QCLs are fabricated next to each other, with minimal lateral distance, to allow efficient beam-coupling into multi-pass gas cells. In addition, the minimal distance allows either laser to be used as an integrated heater for the other, allowing to extend the tuning range of its neighbour without any electrical cross-talk. For the second design, the Vernier effect was used to realize a switchable DFB laser, with two target wavelengths which are distant by about 300 cm^{-1}. These devices are promising laser sources for Tunable Diode Laser Absorption Spectroscopy applications targeting simultaneous detection of multiple gasses, with distant spectral features, in compact and mobile setups.

Continuous-wave dual-wavelength operation of a distributed feedback laser diode with an external cavity using a volume Bragg grating

NASA Astrophysics Data System (ADS)

Zheng, Yujin; Sekine, Takashi; Kurita, Takashi; Kato, Yoshinori; Kawashima, Toshiyuki

2018-03-01

We demonstrate continuous-wave dual-wavelength operation of a broad-area distributed feedback (DFB) laser diode with a single external-cavity configuration. This high-power DFB laser has a narrow bandwidth (<0.29 nm) and was used as a single-wavelength source. A volume Bragg grating was used as an output coupler for the external-cavity DFB laser to output another stable wavelength beam with a narrow bandwidth of 0.27 nm. A frequency difference for dual-wavelength operation of 0.88 THz was achieved and an output power of up to 415 mW was obtained. The external-cavity DFB laser showed a stable dual-wavelength operation over the practical current and temperature ranges.

Improving the Fabrication of Semiconductor Bragg Lasers

NASA Astrophysics Data System (ADS)

Chen, Eric Ping Chun

Fabrication process developments for Bragg reflection lasers have been optimized in this thesis using resources available to the group. New e-beam lithography and oxide etch recipes have been developed to minimize sidewall roughness and residues. E-beam evaporated metal contacts for semiconductor diode laser utilizing oblique angle deposition have also been developed in-house for the first time. Furthermore, improvement in micro-loading effect of DFB laser etching has been demonstrated where the ratio of tapered portion of the sidewall to total etch depth is reduced by half, from 33% to 15%. Electrical, optical and thermal performance of the fabricated lasers are characterized. Comparing the results to previous generation lasers, average dynamic resistance is decreased drastically from 14 Ohms to 7 Ohms and threshold current density also reduced from 1705A/cm2 to 1383A/ cm2. Improvement in laser performance is result of reduced loss from optimized fabrication processes. BRL bow-tie tapered lasers is then fabricated for the first time and output power of 18mW at 200mA input is measured. Benefiting from the increased effective area and better carrier utilization, reduction in threshold current density from 1383A/cm 2 to 712A/cm2 is observed.

DFB fiber laser static strain sensor based on beat frequency interrogation with a reference fiber laser locked to a FBG resonator.

PubMed

Huang, Wenzhu; Feng, Shengwen; Zhang, Wentao; Li, Fang

2016-05-30

We report on a high-resolution static strain sensor developed with distributed feedback (DFB) fiber laser. A reference FBG resonator is used for temperature compensation. Locking another independent fiber laser to the resonator using the Pound-Drever-Hall technique results in a strain power spectral density better than S_ε(f) = (4.6 × 10^-21) ε²/Hz in the frequency range from 1 Hz to 1 kHz, corresponding to a minimum dynamic strain resolution of 67.8 pε/√Hz. This frequency stabilized fiber laser is proposed to interrogate the sensing DFB fiber laser by the beat frequency principle. As a reasonable DFB fiber laser setup is realized, a narrow beat frequency line-width of 3.23 kHz and a high beat frequency stability of 0.036 MHz in 15 minutes are obtained in the laboratory test, corresponding to a minimum static strain resolution of 270 pε. This is the first time that a sub-0.5 nε level for static strain measurement using DFB fiber laser is demonstrated.

Microwave generation in an electro-absorption modulator integrated with a DFB laser subject to optical injection.

PubMed

Zhu, Ning Hua; Zhang, Hong Guang; Man, Jiang Wei; Zhu, Hong Liang; Ke, Jian Hong; Liu, Yu; Wang, Xin; Yuan, Hai Qing; Xie, Liang; Wang, Wei

2009-11-23

This paper presents a new technique to generate microwave signal using an electro-absorption modulator (EAM) integrated with a distributed feedback (DFB) laser subject to optical injection. Experiments show that the frequency of the generated microwave can be tuned by changing the wavelength of the external laser or adjusting the bias voltage of the EAM. The frequency response of the EAM is studied and found to be unsmooth due to packaging parasitic effects and four-wave mixing effect occurring in the active layer of the DFB laser. It is also demonstrated that an EA modulator integrated in between two DFB lasers can be used instead of the EML under optical injection. This integrated chip can be used to realize a monolithically integrated tunable microwave source.

RGB and white-emitting organic lasers on flexible glass.

PubMed

Foucher, C; Guilhabert, B; Kanibolotsky, A L; Skabara, P J; Laurand, N; Dawson, M D

2016-02-08

Two formats of multiwavelength red, green and blue (RGB) laser on mechanically-flexible glass are demonstrated. In both cases, three all-organic, vertically-emitting distributed feedback (DFB) lasers are assembled onto a common ultra-thin glass membrane substrate and fully encapsulated by a thin polymer overlayer and an additional 50 µm-thick glass membrane in order to improve the performance. The first device format has the three DFB lasers sitting next to each other on the glass substrate. The DFB lasers are simultaneously excited by a single overlapping optical pump, emitting spatially separated red, green and blue laser output with individual thresholds of, respectively, 28 µJ/cm(2), 11 µJ/cm(2) and 32 µJ/cm(2) (for 5 ns pump pulses). The second device format has the three DFB lasers, respectively the red, green and blue laser, vertically stacked onto the flexible glass. This device format emits a white laser output for an optical pump fluence above 42 µJ/cm(2).

Design for high-power, single-lobe, grating-surface-emitting quantum cascade lasers enabled by plasmon-enhanced absorption of antisymmetric modes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sigler, C.; Kirch, J. D.; Mawst, L. J.

2014-03-31

Resonant coupling of the transverse-magnetic polarized (guided) optical mode of a quantum-cascade laser (QCL) to the antisymmetric surface-plasmon modes of 2nd-order distributed-feedback (DFB) metal/semiconductor gratings results in strong antisymmetric-mode absorption. In turn, lasing in the symmetric mode, that is, surface emission in a single-lobe far-field beam pattern, is strongly favored over controllable ranges in grating duty cycle and tooth height. By using core-region characteristics of a published 4.6 μm-emitting QCL, grating-coupled surface-emitting (SE) QCLs are analyzed and optimized for highly efficient single-lobe operation. For infinite-length devices, it is found that when the antisymmetric mode is resonantly absorbed, the symmetric mode hasmore » negligible absorption loss (∼0.1 cm{sup −1}) while still being efficiently outcoupled, through the substrate, by the DFB grating. For finite-length devices, 2nd-order distributed Bragg reflector (DBR) gratings are used on both sides of the DFB grating to prevent uncontrolled reflections from cleaved facets. Equations for the threshold-current density and the differential quantum efficiency of SE DFB/DBR QCLs are derived. For 7 mm-long, 8.0 μm-wide, 4.6 μm-emitting devices, with an Ag/InP grating of ∼39% duty cycle, and ∼0.22 μm tooth height, threshold currents as low as 0.45 A are projected. Based on experimentally obtained internal efficiency values from high-performance QCLs, slope efficiencies as high as 3.4 W/A are projected; thus, offering a solution for watt-range, single-lobe CW operation from SE, mid-infrared QCLs.« less

Stimulated Brillouin scattering in ultra-long distributed feedback Bragg gratings in standard optical fiber.

PubMed

Loranger, Sébastien; Lambin-Iezzi, Victor; Wahbeh, Mamoun; Kashyap, Raman

2016-04-15

Distributed feedback (DFB) fiber Bragg gratings (FBG) are widely used as narrow-band filters and single-mode cavities for lasers. Recently, a nonlinear generation has been shown in 10-20 cm DFB gratings in a highly nonlinear fiber. First, we show in this Letter a novel fabrication technique of ultra-long DFBs in a standard fiber (SMF-28). Second, we demonstrate nonlinear generation in such gratings. A particular inscription technique was used to fabricate all-in-phase ultra-long FBG and to implement reproducible phase shift to form a DFB mode. We demonstrate stimulated Brillouin scattering (SBS) emission from this DFB mode and characterize the resulting laser. It seems that such a SBS based DFB laser stabilizes a pump's jittering and reduces its linewidth.

Investigation of High Linearity DFB Lasers for Analog Communications

DTIC Science & Technology

1998-02-01

personal communication systems (PCS) service and phased array radar. In this thesis, we examine the dynamic range and distortion for a Fujitsu DFB laser. We...PCS) service and phased array radar. In this thesis, we examine the dynamic range and distortion for a Fujitsu DFB laser. We extract parameters from...is dependent upon the coupling coefficient, as discussed in Chapter 3. Spatial hole burning is more important at lower frequencies (owing to finite

Distributed feedback fiber laser based on a fiber Bragg grating inscribed using the femtosecond point-by-point technique

NASA Astrophysics Data System (ADS)

Skvortsov, M. I.; Wolf, A. A.; Dostovalov, A. V.; Vlasov, A. A.; Akulov, V. A.; Babin, S. A.

2018-03-01

A distributed feedback (DFB) fiber laser based on a 32-mm long pi-phase-shifted fiber Bragg grating inscribed using the femtosecond point-by-point technique in a single-mode erbium-doped optical fiber (CorActive EDF-L 1500) is demonstrated. The lasing power of the DFB laser reaches 0.7 mW at a wavelength of 1550 nm when pumped with a laser diode at a wavelength of 976 nm and power of 525 mW. The width of the lasing spectrum is 17 kHz. It is shown that the pi-phase-shifted fiber Bragg grating fs-inscribed in a non-PM fiber provides the selection of the single polarization mode of the DFB laser. DFB laser formation in a highly doped non-photosensitive optical fiber (CoreActive SCF-ER60-8/125-12) is also demonstrated.

Hybrid semiconductor fiber lasers for telecommunications

NASA Astrophysics Data System (ADS)

Khalili, Alireza

2006-12-01

Highly stable edge emitting semiconductor lasers are of utmost importance in most telecommunications applications where high-speed data transmission sets strict limits on the purity of the laser signal. Unfortunately, most edge emitting semiconductor lasers, unlike gaseous or solid-state laser sources, operate with many closely spaced axial modes, which accounts for the observed instability and large spikes in the output spectrum of such lasers. Consequently, in most telecom applications distributed feedback (DFB) or distributed Bragg reflector (DBR) techniques are used to ensure stability and single-frequency operation, further adding to the cost and complexity of such lasers. Additionally, coupling of the highly elliptical output beam of these lasers to singlemode fibers complicates the packaging procedure and sub-micron alignment of various optical components is often necessary. Utilizing the evanescent coupling between a semiconductor antiresonant reflecting optical waveguide (ARROW) and a side polished fiber, this thesis presents an alternative side-coupled laser module that eliminates the need for the cumbersome multi-component alignment processes of conventional laser packages, and creates an inherent mode selection mechanism that guarantees singlemode radiation into the fiber without any gratings. We have been able to demonstrate the first side-coupled fiber semiconductor laser in this technology, coupling more than 3mW of power at 850nm directly into a 5/125mum singlemode fiber. This mixed-cavity architecture yields a high thermal stability (˜0.06nm/°C), and negligible spectral spikes are observed. Theoretical background and simulation results, as well as several supplementary materials are also presented to further rationalize the experimental data. A side-coupled light-emitter and pre-amplifier are also proposed and discussed. We also study different architectures for attaining higher efficiency, higher output power, and wavelength tunability in such lasers. Finally, we discuss possible venues for integration of these side-coupled devices in a telecommunication system. Approved for publication.

Low SWaP Semiconductor Laser Transmitter Modules For ASCENDS Mission Applications

NASA Technical Reports Server (NTRS)

Prasad, Narasimha S.; Rosiewicz, Alex; Coleman, Steven M.

2012-01-01

The National Research Council's (NRC) Decadal Survey (DS) of Earth Science and Applications from Space has identified the Active Sensing of CO2 Emissions over Nights, Days, and Seasons (ASCENDS) as an important atmospheric science mission. NASA Langley Research Center, working with its partners, is developing fiber laser architecture based intensity modulated CW laser absorption spectrometer for measuring XCO2 in the 1571 nm spectral band. In support of this measurement, remote sensing of O2 in the 1260 nm spectral band for surface pressure measurements is also being developed. In this paper, we will present recent progress made in the development of advanced transmitter modules for CO2 and O2 sensing. Advanced DFB seed laser modules incorporating low-noise variable laser bias current supply and low-noise variable temperature control circuit have been developed. The 1571 nm modules operate at >80 mW and could be tuned continuously over the wavelength range of 1569-1574nm at a rate of 2 pm/mV. Fine tuning was demonstrated by adjusting the laser drive at a rate of 0.7 pm/mV. Heterodyne linewidth measurements have been performed showing linewidth 200 kHz and frequency jitter 75 MHz. In the case of 1260 nm DFB laser modules, we have shown continuous tuning over a range of 1261.4 - 1262.6 nm by changing chip operating temperature and 1261.0 - 1262.0 nm by changing the laser diode drive level. In addition, we have created a new laser package configuration which has been shown to improve the TEC coefficient of performance by a factor of 5 and improved the overall efficiency of the laser module by a factor of 2.

Frequency Stabilization of DFB Laser Diodes at 1572 nm for Spaceborne Lidar Measurements of CO2

NASA Technical Reports Server (NTRS)

Numata, Kenji; Chen, Jeffrey R.; Wu, Stewart T.; Abshire, James B.; Krainak, Michael A.

2010-01-01

We report a fiber-based, pulsed laser seeder system that rapidly switches among 6 wavelengths across atmospheric carbon dioxide (CO2) absorption line near 1572.3 nm for measurements of global CO2 mixing ratios to 1-ppmv precision. One master DFB laser diode has been frequency-locked to the CO2 line center using a frequency modulation technique, suppressing its peak-to-peak frequency drifts to 0.3 MHz at 0.8 sec averaging time over 72 hours. Four online DFB laser diodes have been offset-locked to the master laser using phase locked loops, with virtually the same sub-MHz absolute accuracy. The 6 lasers were externally modulated and then combined to produce the measurement pulse train.

Advanced injection seeder for various applications: form LIDARs to supercontinuum sources

NASA Astrophysics Data System (ADS)

Grzes, Pawel

2017-12-01

The paper describes an injection seeder driver (prototype) for a directly modulated semiconductor laser diode. The device provides adjustable pulse duration and repetition frequency to shape an output signal. A temperature controller stabilizes a laser diode spectrum. Additionally, to avoid a back oscillation, redundant power supply holds a generation until next stages shut down. Low EMI design and ESD protection guarantee stable operation even in a noisy environment. The controller is connected to the PC via USB and parameters of the pulse are digitally controlled through a graphical interface. The injection seeder controller can be used with a majority of commercially available laser diodes. In the experimental setup a telecommunication DFB laser with 4 GHz bandwidth was used. It allows achieving subnanosecond pulses generated at the repetition rate ranging from 1 kHz to 50 MHz. The developed injection seeder controller with a proper laser diode can be used in many scientific, industrial and medical applications.

Heterogeneously integrated III-V/silicon dual-mode distributed feedback laser array for terahertz generation.

PubMed

Shao, Haifeng; Keyvaninia, Shahram; Vanwolleghem, Mathias; Ducournau, Guillaume; Jiang, Xiaoqing; Morthier, Geert; Lampin, Jean-Francois; Roelkens, Gunther

2014-11-15

We demonstrate an integrated distributed feedback (DFB) laser array as a dual-wavelength source for narrowband terahertz (THz) generation. The laser array is composed of four heterogeneously integrated III-V-on-silicon DFB lasers with different lengths enabling dual-mode lasing tolerant to process variations, bias fluctuations, and ambient temperature variations. By optical heterodyning the two modes emitted by the dual-wavelength DFB laser in the laser array using a THz photomixer composed of an uni-traveling carrier photodiode (UTC-PD), a narrow and stable carrier signal with a frequency of 0.357 THz is generated. The central operating frequency and the emitted terahertz wave linewidth are analyzed, along with their dependency on the bias current applied to the laser diode and ambient temperature.

Short cavity DFB fiber laser based vector hydrophone for low frequency signal detection

NASA Astrophysics Data System (ADS)

Zhang, Xiaolei; Zhang, Faxiang; Jiang, Shaodong; Min, Li; Li, Ming; Peng, Gangding; Ni, Jiasheng; Wang, Chang

2017-12-01

A short cavity distributed feedback (DFB) fiber laser is used for low frequency acoustic signal detection. Three DFB fiber lasers with different central wavelengths are chained together to make three-element vector hydrophone with proper sensitivity enhancement design, which has extensive and significant applications to underwater acoustic monitoring for the national defense, oil, gas exploration, and so on. By wavelength-phase demodulation, the lasing wavelength changes under different frequency signals can be interpreted, and the sensitivity is tested about 33 dB re pm/g. The frequency response range is rather flat from 5 Hz to 300 Hz.

Tunable microwave signal generator with an optically-injected 1310 nm QD-DFB laser.

PubMed

Hurtado, Antonio; Mee, Jesse; Nami, Mohsen; Henning, Ian D; Adams, Michael J; Lester, Luke F

2013-05-06

Tunable microwave signal generation with frequencies ranging from below 1 GHz to values over 40 GHz is demonstrated experimentally with a 1310 nm Quantum Dot (QD) Distributed-Feedback (DFB) laser. Microwave signal generation is achieved using the period 1 dynamics induced in the QD DFB under optical injection. Continuous tuning in the positive detuning frequency range of the quantum dot's unique stability map is demonstrated. The simplicity of the experimental configuration offers promise for novel uses of these nanostructure lasers in Radio-over-Fiber (RoF) applications and future mobile networks.

Single-mode surface plasmon distributed feedback lasers.

PubMed

Karami Keshmarzi, Elham; Tait, R Niall; Berini, Pierre

2018-03-29

Single-mode surface plasmon distributed feedback (DFB) lasers are realized in the near infrared using a two-dimensional non-uniform long-range surface plasmon polariton structure. The surface plasmon mode is excited onto a 20 nm-thick, 1 μm-wide metal stripe (Ag or Au) on a silica substrate, where the stripe is stepped in width periodically, forming a 1st order Bragg grating. Optical gain is provided by optically pumping a 450 nm-thick IR-140 doped PMMA layer as the top cladding, which covers the entire length of the Bragg grating, thus creating a DFB laser. Single-mode lasing peaks of very narrow linewidth were observed for Ag and Au DFBs near 882 nm at room temperature. The narrow linewidths are explained by the low spontaneous emission rate into the surface plasmon lasing mode as well as the high quality factor of the DFB structure. The lasing emission is exclusively TM polarized. Kinks in light-light curves accompanied by spectrum narrowing were observed, from which threshold pump power densities can be clearly identified (0.78 MW cm-2 and 1.04 MW cm-2 for Ag and Au DFB lasers, respectively). The Schawlow-Townes linewidth for our Ag and Au DFB lasers is estimated and very narrow linewidths are predicted for the lasers. The lasers are suitable as inexpensive, recyclable and highly coherent sources of surface plasmons, or for integration with other surface plasmon elements of similar structure.

High channel count and high precision channel spacing multi-wavelength laser array for future PICs.

PubMed

Shi, Yuechun; Li, Simin; Chen, Xiangfei; Li, Lianyan; Li, Jingsi; Zhang, Tingting; Zheng, Jilin; Zhang, Yunshan; Tang, Song; Hou, Lianping; Marsh, John H; Qiu, Bocang

2014-12-09

Multi-wavelength semiconductor laser arrays (MLAs) have wide applications in wavelength multiplexing division (WDM) networks. In spite of their tremendous potential, adoption of the MLA has been hampered by a number of issues, particularly wavelength precision and fabrication cost. In this paper, we report high channel count MLAs in which the wavelengths of each channel can be determined precisely through low-cost standard μm-level photolithography/holographic lithography and the reconstruction-equivalent-chirp (REC) technique. 60-wavelength MLAs with good wavelength spacing uniformity have been demonstrated experimentally, in which nearly 83% lasers are within a wavelength deviation of ±0.20 nm, corresponding to a tolerance of ±0.032 nm in the period pitch. As a result of employing the equivalent phase shift technique, the single longitudinal mode (SLM) yield is nearly 100%, while the theoretical yield of standard DFB lasers is only around 33.3%.

Rare-earth-ion-doped ultra-narrow-linewidth lasers on a silicon chip and applications to intra-laser-cavity optical sensing

NASA Astrophysics Data System (ADS)

Bernhardi, E. H.; de Ridder, R. M.; Wörhoff, K.; Pollnau, M.

2013-03-01

We report on diode-pumped distributed-feedback (DFB) and distributed-Bragg-reflector (DBR) channel waveguide lasers in Er-doped and Yb-doped Al2O3 on standard thermally oxidized silicon substrates. Uniform surface-relief Bragg gratings were patterned by laser-interference lithography and etched into the SiO2 top cladding. The maximum grating reflectivity exceeded 99%. Monolithic DFB and DBR cavities with Q-factors of up to 1.35×106 were realized. The Erdoped DFB laser delivered 3 mW of output power with a slope efficiency of 41% versus absorbed pump power. Singlelongitudinal- mode operation at a wavelength of 1545.2 nm was achieved with an emission line width of 1.70 0.58 kHz, corresponding to a laser Q-factor of 1.14×1011. Yb-doped DFB and DBR lasers were demonstrated at wavelengths near 1020 nm with output powers of 55 mW and a slope efficiency of 67% versus launched pump power. An Yb-doped dualwavelength laser was achieved based on the optical resonances induced by two local phase shifts in the DFB structure. A stable microwave signal at ~15 GHz with a -3-dB width of 9 kHz and a long-term frequency stability of +/- 2.5 MHz was created via the heterodyne photo-detection of the two laser wavelengths. By measuring changes in the microwave beat signal as the intra-cavity evanescent laser field interacts with micro-particles on the waveguide surface, we achieved real-time detection and accurate size measurement of single micro-particles with diameters ranging between 1 μm and 20 μm, which represents the typical size of many fungal and bacterial pathogens. A limit of detection of ~500 nm was deduced.

Ultra-fast quantum randomness generation by accelerated phase diffusion in a pulsed laser diode.

PubMed

Abellán, C; Amaya, W; Jofre, M; Curty, M; Acín, A; Capmany, J; Pruneri, V; Mitchell, M W

2014-01-27

We demonstrate a high bit-rate quantum random number generator by interferometric detection of phase diffusion in a gain-switched DFB laser diode. Gain switching at few-GHz frequencies produces a train of bright pulses with nearly equal amplitudes and random phases. An unbalanced Mach-Zehnder interferometer is used to interfere subsequent pulses and thereby generate strong random-amplitude pulses, which are detected and digitized to produce a high-rate random bit string. Using established models of semiconductor laser field dynamics, we predict a regime of high visibility interference and nearly complete vacuum-fluctuation-induced phase diffusion between pulses. These are confirmed by measurement of pulse power statistics at the output of the interferometer. Using a 5.825 GHz excitation rate and 14-bit digitization, we observe 43 Gbps quantum randomness generation.

Novel Helmholtz-based photoacoustic sensor for trace gas detection at ppm level using GaInAsSb/GaAlAsSb DFB lasers.

PubMed

Mattiello, Mario; Niklès, Marc; Schilt, Stéphane; Thévenaz, Luc; Salhi, Abdelmajid; Barat, David; Vicet, Aurore; Rouillard, Yves; Werner, Ralph; Koeth, Johannes

2006-04-01

A new and compact photoacoustic sensor for trace gas detection in the 2-2.5 microm atmospheric window is reported. Both the development of antimonide-based DFB lasers with singlemode emission in this spectral range and a novel design of photoacoustic cell adapted to the characteristics of these lasers are discussed. The laser fabrication was made in two steps. The structure was firstly grown by molecular beam epitaxy then a metallic DFB grating was processed. The photoacoustic cell is based on a Helmholtz resonator that was designed in order to fully benefit from the highly divergent emission of the antimonide laser. An optimized modulation scheme based on wavelength modulation of the laser source combined with second harmonic detection has been implemented for efficient suppression of wall noise. Using a 2211 nm laser, sub-ppm detection limit has been demonstrated for ammonia.

DBR and DFB Lasers in Neodymium- and Ytterbium-Doped Photothermorefractive Glasses

NASA Technical Reports Server (NTRS)

Ryasnyanskiy, Aleksandr; Vorobiev, N.; Smirnov, V.; Lumeau, J.; Glebov, A.; Mokhun, O..; Spiegelberg, Ch.; Krainak, Michael A.; Glebov, A.; Glebov, L.

2014-01-01

The first demonstration, to the best of our knowledge, of distributed Bragg reflector (DBR) and monolithic distributed feedback (DFB) lasers in photothermorefractive glass doped with rare-earth ions is reported. The lasers were produced by incorporation of the volume Bragg gratings into the laser gain elements. A monolithic single-frequency solid-state laser with a line width of 250 kHz and output power of 150 mW at 1066 nm is demonstrated.

Initial evaluation of commercially available InGaAsP DFB laser diodes for use in high-speed digital fiber optic transceivers

NASA Technical Reports Server (NTRS)

Cook, Anthony L.; Hendricks, Herbert D.

1990-01-01

NASA has been pursuing the development of high-speed fiber-optic transceivers for use in a number of space data system applications. Current efforts are directed toward a high-performance all-integrated-circuit transceiver operating up to the 3-5 Gb/s range. Details of the evaluation and selection of candidate high-speed optical sources to be used in the space-qualified high-performance transceiver are presented. Data on the performance of commercially available DFB (distributed feedback) lasers are presented, and their performance relative to each other and to their structural design with regard to their use in high-performance fiber-optic transceivers is discussed. The DFB lasers were obtained from seven commercial manufacturers. The data taken on each laser included threshold current, differential quantum efficiency, CW side mode suppression radio, wavelength temperature coefficient, threshold temperature coefficient, natural linewidth, and far field pattern. It was found that laser diodes with buried heterostructures and first-order gratings had, in general, the best CW operating characteristics. The modulated characteristics of the DFB laser diodes are emphasized. Modulated linewidth, modulated side mode suppression ratio, and frequency response are discussed.

Label free biosensor incorporating a replica-molded, vertically emitting distributed feedback laser

NASA Astrophysics Data System (ADS)

Lu, M.; Choi, S. S.; Wagner, C. J.; Eden, J. G.; Cunningham, B. T.

2008-06-01

A label free biosensor based upon a vertically emitting distributed feedback (DFB) laser has been demonstrated. The DFB laser comprises a replica-molded, one-dimensional dielectric grating coated with laser dye-doped polymer as the gain medium. Adsorption of biomolecules onto the laser surface alters the DFB laser emission wavelength, thereby permitting the kinetic adsorption of a protein polymer monolayer or the specific binding of small molecules to be quantified. A bulk sensitivity of 16.6nm per refractive index unit and the detection of a monolayer of the protein polymer poly(Lys, Phe) have been observed with this biosensor. The sensor represents a departure from conventional passive resonant optical sensors from the standpoint that the device actively generates its own narrowband high intensity output without stringent requirements on the coupling alignments, resulting in a simple, robust illumination and detection configuration.

Generation of a CW local oscillator signal using a stabilized injection locked semiconductor laser

NASA Astrophysics Data System (ADS)

Pezeshki, Jonah Massih

In high speed-communications, it is desirable to be able to detect small signals while maintaining a low bit-error rate. Conventional receivers for high-speed fiber optic networks are Amplified Direct Detectors (ADDs) that use erbium-doped fiber amplifiers (EDFAs) before the detector to achieve a suitable sensitivity. In principle, a better method for obtaining the maximum possible signal to noise ratio is through the use of homodyne detection. The major difficulty in implementing a homodyne detection system is the generation of a suitable local oscillator signal. This local oscillator signal must be at the same frequency as the received data signal, as well as be phase coherent with it. To accomplish this, a variety of synchronization techniques have been explored, including Optical Phase-Lock Loops (OPLL), Optical Injection Locking (OIL) with both Fabry-Perot and DFB lasers, and an Optical Injection Phase-Lock Loop (OIPLL). For this project I have implemented a method for regenerating a local oscillator from a portion of the received optical signal. This regenerated local oscillator is at the same frequency, and is phase coherent with, the received optical signal. In addition, we show that the injection locking process can be electronically stabilized by using the modulation transfer ratio of the slave laser as a monitor, given either a DFB or Fabry-Perot slave laser. We show that this stabilization technique maintains injection lock (given a locking range of ˜1GHz) for laser drift much greater than what is expected in a typical transmission system. In addition, we explore the quality of the output of the slave laser, and analyze its suitability as a local oscillator signal for a homodyne receiver.

Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22  μm.

PubMed

Feng, Tao; Hosoda, Takashi; Shterengas, Leon; Kipshidze, Gela; Stein, Aaron; Lu, Ming; Belenky, Gregory

2017-11-01

The laterally coupled distributed feedback (LC-DFB) GaSb-based type-I quantum well cascade diode lasers using the second- and the sixth-order gratings to stabilize the output spectrum near 3.22 μm were designed and fabricated. The laser heterostructure contained three cascades. The devices were manufactured using a single dry etching step defining the ∼5-μm-wide ridge with ∼5-μm-wide gratings sections adjacent to the ridge sides. The grating coupling coefficients were estimated to be about 1  cm -1 . The stability of the single-frequency operation was ensured by alignment of the DFB mode to the relatively wide gain peak. The 2-mm-long second-order LC-DFB lasers generated above 10 mW of continuous-wave (CW) output power at 20°C in epi-side-up configuration and demonstrated power conversion efficiency above 2%. The sixth-order LC-DFB lasers showed lower efficiency but still generated several milliwatts of CW output power. The devices demonstrated a CW current tuning range of about 3.5 nm at the temperature of 20°C.

Distributed feedback interband cascade lasers with top grating and corrugated sidewalls

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, Feng; Stocker, Michael; Pham, John

Distributed feedback (DFB) interband cascade lasers (ICLs) with a 1st order top surface grating were designed and fabricated. Partially corrugated sidewalls were implemented to suppress high order lateral modes. The DFB ICLs have 4 mm long and 4.5 mu m wide ridge waveguides and are mounted epi-up on AlN submounts. We demonstrated a continuous-wave (CW) DFB ICL, from a first wafer which has a large detuning of the gain peak from the DFB wavelength, with a side mode suppression ratio of 30 dB. With proper matching of grating feedback and the gain peak wavelength for the second wafer, a DFBmore » ICL was demonstrated with a maximum CW output power and a maximum wall plug efficiency reaching 42 mW and 2%, respectively, at 25 degrees C. The lasing wavelengths of both lasers are around 3.3 mu m at 25 degrees C. Published by AIP Publishing.« less

Fiber Bragg Grating vibration sensor with DFB laser diode

NASA Astrophysics Data System (ADS)

Siska, Petr; Brozovic, Martin; Cubik, Jakub; Kepak, Stanislav; Vitasek, Jan; Koudelka, Petr; Latal, Jan; Vasinek, Vladimir

2012-01-01

The Fiber Bragg Grating (FBG) sensors are nowadays used in many applications. Thanks to its quite big sensitivity to a surrounding environment, they can be used for sensing of temperature, strain, vibration or pressure. A fiber Bragg grating vibration sensor, which is interrogated by a distributed feedback laser diode (DFB) is demonstrated in this article. The system is based on the intensity modulation of the narrow spectral bandwidth of the DFB laser, when the reflection spectrum of the FBG sensor is shifted due to the strain that is applied on it in form of vibrations caused by acoustic wave pressure from loud speaker. The sensor's response in frequency domain and strain is measured; also the factor of sensor pre-strain impact on its sensitivity is discussed.

A new and efficient theoretical model to analyze chirped grating distributed feedback lasers

NASA Astrophysics Data System (ADS)

Arif, Muhammad

Threshold conditions of a distributed feedback (DFB) laser with a linearly chirped grating are investigated using a new and efficient method. DFB laser with chirped grating is found to have significant effects on the lasing characteristics. The coupled wave equations for these lasers are derived and solved using a power series method to obtain the threshold condition. A Newton- Raphson routine is used to solve the threshold conditions numerically to obtain threshold gain and lasing wavelengths. To prove the validity of this model, it is applied to both conventional index-coupled and complex- coupled DFB lasers. The threshold gain margins are calculated as functions of the ratio of the gain coupling to index coupling (|κg|/|κ n|), and the phase difference between the index and gain gratings. It was found that for coupling coefficient |κ|l < 0.9, the laser shows a mode degeneracy at particular values of the ratio |κ g|/|κn|, for cleaved facets. We found that at phase differences π/2 and 3π/2, between the gain and index grating, for an AR-coated complex-coupled laser, the laser becomes multimode and a different mode starts to lase. We also studied the effect of the facet reflectivity (both magnitude and phase) on the gain margin of a complex- coupled DFB laser. Although, the gain margin varies slowly with the magnitude of the facet reflectivity, it shows large variations as a function of the phase. Spatial hole burning was found to be minimum at phase difference nπ, n = 0, 1, ... and maximum at phase differences π/2 and 3π/2. The single mode gain margin of an index-coupled linearly chirped CG-DFB is calculated for different chirping factors and coupling constants. We found that there is clearly an optimum chirping for which the single mode gain margin is maximum. The gain margins were calculated also for different positions of the cavity center. The effect of the facet reflectivities and their phases on the gain margin was investigated. We found the gain margin is maximum and the Spatial Hole Burning (SHB) is minimum for the cavity center at the middle of the laser cavity. Effect of chirping on the threshold gain, gain margin and spatial hole burning (SHB) for different parameters, such as the coupling coefficients, facet reflectivities, etc., of these lasers are studied. Single mode yield of these lasers are calculated and compared with that of a uniform grating DFB laser.

Study of phase-locked diode laser array and DFB/DBR surface emitting laser diode

NASA Astrophysics Data System (ADS)

Hsin, Wei

New types of phased-array and surface-emitting lasers are designed. The importance and approaches (or structures) of different phased array and surface emitting laser diodes are reviewed. The following are described: (1) a large optical cavity channel substrate planar laser array with layer thickness chirping; (2) a vertical cavity surface emitter with distributed feedback (DFB) optical cavity and a transverse junction buried heterostructure; (3) a microcavity distributed Bragg reflector (DBR) surface emitter; and (4) two surface emitting laser structures which utilized lateral current injection schemes to overcome the problems occurring in the vertical injection scheme.

Development of an advanced uncooled 10-Gb DFB laser for volume manufacture

NASA Astrophysics Data System (ADS)

Burns, Gordon; Charles, Paul M.

2003-03-01

Optical communication systems operating at 10Gbit/s such as 10Gigabit Ethernet are becoming more and more important in Local Area Networks (LAN) and Metropolitan Area Networks (MAN). This market requires optical transceivers of low cost, size and power consumption. This drives a need for uncooled DFB lasers directly modulated at 10Gbit/s. This paper describes the development of a state of the art uncooled high speed DFB laser which is capable of being manufactured in high volume at the low cost demanded by the GbE market. A DFB laser was designed by developing technological building blocks within the 'conventional" InGaAsP materials system, using existing well proven manufacturing processes modules wherever possible, limiting the design risk to a few key areas where innovation was required. The temperature and speed performance of the InGaAsP SMQW active layer system was carefully optimized and then coupled with a low parasitic lateral confinement system. Using concurrent engineering, new processes were demonstrated to have acceptable process capability within a manufacturing fabrication environment, proving their ability to support high volume manufacturing requirements. The DFB laser fabricated was shown to operate at 100C chip temperature with an open eye at 10Gbit/s operation (with an extinction ratio >5dB). Up to 90C operation this DFB shows threshold current as low as 29mA, optical power as high as 13mW and it meets the 10Gb scaled Ethernet mask with extinction ratio >6dB. It was found that the high temperature dynamic behavior of these lasers could not be fully predicted from static test data. A production test strategy was therefore followed where equipment was designed to fully test devices/subassemblies at 100C and up to 20Gbit/s at key points in the product build. This facilitated the rapid optimisation of product yields upon manufacturing ramp up and minimization of product costs. This state of the art laser is now transferred into volume manufacture.

InGaAlAs RW-based electro-absorption-modulated DFB-lasers for high-speed applications

NASA Astrophysics Data System (ADS)

Moehrle, Martin; Klein, Holger; Bornholdt, Carsten; Przyrembel, Georges; Sigmund, Ariane; Molzow, Wolf-Dietrich; Troppenz, Ute; Bach, Heinz-Gunter

2014-05-01

Electro-absorption modulated 10G and 25G DFB lasers (EML) are key components in transmission systems for long reach (up to 10 km) and extended reach (up to 80 km) applications. The next generation Ethernet will most likely be 400 Gb/s which will require components with even higher bandwidth. Commercially available EMLs are regarded as high-cost components due to their separate epitaxial butt-coupling growth process to separately optimize the DFB laser and the electro-absorption modulator (EAM). Alternatively the selective area growth (SAG) technique is used to achieve different MQW bandgaps in the DFB and EAM section of an EML. However for a lot of applications an emission wavelength within a narrow wavelength window is required enforcing a temperature controlled operation. All these applications can be covered with the developed EML devices that use a single InGaAlAs MQW waveguide for both the DFB and the EAM enabling a low-cost fabrication process similar to a conventional DFB laser diode. It will be shown that such devices can be used for 25Gb/s and 40Gb/s applications with excellent performance. By an additional monolithic integration of an impedance matching circuit the module fabrication costs can be reduced but also the modulation bandwidth of the devices can be further enhanced. Up to 70Gb/s modulation with excellent eye openings can be achieved. This novel approach opens the possibility for 100Gb/s NRZ EMLs and thus 4x100Gb/s NRZ EML-based transmitters in future. Also even higher bitrates seem feasible using more complex modulation formats such as e.g. DMT and PAM.

Ultra-narrow-linewidth erbium-doped lasers on a silicon photonics platform

NASA Astrophysics Data System (ADS)

Li, Nanxi; Purnawirman, Purnawirman; Magden, E. Salih; Singh, Gurpreet; Singh, Neetesh; Baldycheva, Anna; Hosseini, Ehsan S.; Sun, Jie; Moresco, Michele; Adam, Thomas N.; Leake, Gerald; Coolbaugh, Douglas; Bradley, Jonathan D. B.; Watts, Michael R.

2018-02-01

We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infrared wavelengths (950-2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 +/- 0.3 kHz for the DPS-DFB laser, as compared to ΔγQPS = 30.4 +/- 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (RSHDI). Even narrower linewidth can be achieved by mechanical stabilization of the setup, increasing the pump absorption efficiency, increasing the output power, or enhancing the cavity Q.

Organic Solid-State Tri-Wavelength Lasing from Holographic Polymer-Dispersed Liquid Crystal and a Distributed Feedback Laser with a Doped Laser Dye and a Semiconducting Polymer Film.

PubMed

Liu, Minghuan; Liu, Yonggang; Peng, Zenghui; Wang, Shaoxin; Wang, Qidong; Mu, Quanquan; Cao, Zhaoliang; Xuan, Li

2017-05-07

Organic solid-state tri-wavelength lasing was demonstrated from dye-doped holographic polymer-dispersed liquid crystal (HPDLC) distributed feedback (DFB) laser with semiconducting polymer poly[-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene-vinylene] (MEH-PPV) and laser dye [4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran] (DCM) by a one-step holography technique, which centered at 605.5 nm, 611.9 nm, and 671.1 nm. The temperature-dependence tuning range for the tri-wavelength dye-doped HPDLC DFB laser was as high as 8 nm. The lasing emission from the 9th order HPDLC DFB laser with MEH-PPV as active medium was also investigated, which showed excellent s-polarization characterization. The diffraction order is 9th and 8th for the dual-wavelength lasing with DCM as the active medium. The results of this work provide a method for constructing the compact and cost-effective all solid-state smart laser systems, which may find application in scientific and applied research where multi-wavelength radiation is required.

Development of Advanced Seed Laser Modules for Lidar and Spectroscopy Applications

NASA Technical Reports Server (NTRS)

Prasad, Narasimha S.; Rosiewicz, Alex; Coleman, Steven M.

2013-01-01

We report on recent progress made in the development of highly compact, single mode, distributed feedback laser (DFB) seed laser modules for lidar and spectroscopy applications from space based platforms. One of the intended application of this technology is in the NASA's Active Sensing of CO2 Emissions over Nights, Days, and Seasons (ASCENDS) mission. The DFB laser modules operating at 1571 nm and 1262 nm have advanced current and temperature drivers built into them. A combination of temperature and current tuning allows coarse and fine adjustment of the diode wavelengths.

Narrow-stripe broad-area lasers with distributed-feedback surface gratings as brilliant sources for high power spectral beam combining systems

NASA Astrophysics Data System (ADS)

Decker, J.; Crump, P.; Fricke, J.; Wenzel, H.; Maaβdorf, A.; Erbert, G.; Tränkle, G.

2014-03-01

Laser systems based on spectral beam combining (SBC) of broad-area (BA) diode lasers are promising tools for material processing applications. However, the system brightness is limited by the in-plane beam param- eter product, BPP, of the BA lasers, which operate with a BPP of < 3mm-mrad. The EU project BRIDLE (www.bridle.eu) is developing novel diode laser sources for such systems, and several technological advances are sought. For increased system brightness and optimal ber-coupling the diode lasers should operate with reduced BPP and vertical far eld angle (95% power content), μV 95. The resulting diode lasers are fabricated as mini- bars for reduced assembly costs. Gratings are integrated into the mini-bar, with each laser stripe emitting at a different wavelength. In this way, each emitter can be directed into a single bre via low-cost dielectric filters. Distributed-feedback narrow-stripe broad-area (DFB-NBA) lasers are promising candidates for these SBC sys- tems. We review here the design process and performance achieved, showing that DFB-NBA lasers with stripe width, W = 30 μm, successfully cut of higher-order lateral modes, improving BPP. Uniform, surface-etched, 80th-order Bragg gratings are used, with weak gratings essential for high e ciency. To date, such DFB-NBA sources operate with < 50% effciency at output power, Pout < 6 W, with BPP < 1.8 mm-mrad and offV 95 36 . The emission wavelength is about 970 nm and the spectral width is < 0.7 nm (95% power). The BPP is half that of a DFB-BA lasers with W = 90 um. We conclude with a review of options for further performance improvements.

Mode switching in a multi-wavelength distributed feedback quantum cascade laser using an external micro-cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sidler, Meinrad; Institute for Quantum Electronics, ETH Zurich, Wolfgang-Pauli-Strasse 16, 8093 Zurich; Rauter, Patrick

2014-02-03

We demonstrate a multi-wavelength distributed feedback (DFB) quantum cascade laser (QCL) operating in a lensless external micro-cavity and achieve switchable single-mode emission at three distinct wavelengths selected by the DFB grating, each with a side-mode suppression ratio larger than 30 dB. Discrete wavelength tuning is achieved by modulating the feedback experienced by each mode of the multi-wavelength DFB QCL, resulting from a variation of the external cavity length. This method also provides a post-fabrication control of the lasing modes to correct for fabrication inhomogeneities, in particular, related to the cleaved facets position.

Single transverse mode protein laser

NASA Astrophysics Data System (ADS)

Dogru, Itir Bakis; Min, Kyungtaek; Umar, Muhammad; Bahmani Jalali, Houman; Begar, Efe; Conkar, Deniz; Firat Karalar, Elif Nur; Kim, Sunghwan; Nizamoglu, Sedat

2017-12-01

Here, we report a single transverse mode distributed feedback (DFB) protein laser. The gain medium that is composed of enhanced green fluorescent protein in a silk fibroin matrix yields a waveguiding gain layer on a DFB resonator. The thin TiO2 layer on the quartz grating improves optical feedback due to the increased effective refractive index. The protein laser shows a single transverse mode lasing at the wavelength of 520 nm with the threshold level of 92.1 μJ/ mm2.

Single-mode interband cascade laser multiemitter structure for two-wavelength absorption spectroscopy

NASA Astrophysics Data System (ADS)

Scheuermann, Julian; Weih, Robert; Becker, Steffen; Fischer, Marc; Koeth, Johannes; Höfling, Sven

2018-01-01

An interband cascade laser multiemitter with single-mode distributed feedback (DFB) emission at two wavelengths is presented. Continuous-wave laser operation is measured from 0°C to 40°C with threshold currents of around 25 mA and output powers of around 9 mW at 20°C. The ridge waveguide DFB structures are monolithically integrated with a spacing of 70 μm and each is provided with an individual metal DFB grating to select specific single-mode wavelengths of interest for absorption spectroscopy. The emission windows at 3.92 and 4.01 μm are targeting hydrogen sulfide and sulfur dioxide, which are of importance for industrial applications since both gases are reagents of the Claus process in sulfur recovery units, recovering elemental sulfur from gaseous hydrogen sulfide.

Multiperiod-grating surface-emitting lasers

NASA Technical Reports Server (NTRS)

Lang, Robert J. (Inventor)

1992-01-01

Surface-emitting distributed feedback (DFB) lasers are disclosed with hybrid gratings. A first-order grating is provided at one or both ends of the active region of the laser for retroreflection of light back into the active region, and a second-order or nonresonant grating is provided at the opposite end for coupling light out perpendicular to the surfaces of the laser or in some other selected direction. The gratings may be curved to focus light retroreflected into the active region and to focus light coupled out to a point. When so focused to a point, the DFB laser may be part of a monolithic read head for a laser recorded disk, or an optical coupler into an optical fiber.

Spectrally high performing quantum cascade lasers

NASA Astrophysics Data System (ADS)

Toor, Fatima

Quantum cascade (QC) lasers are versatile semiconductor light sources that can be engineered to emit light of almost any wavelength in the mid- to far-infrared (IR) and terahertz region from 3 to 300 mum [1-5]. Furthermore QC laser technology in the mid-IR range has great potential for applications in environmental, medical and industrial trace gas sensing [6-10] since several chemical vapors have strong rovibrational frequencies in this range and are uniquely identifiable by their absorption spectra through optical probing of absorption and transmission. Therefore, having a wide range of mid-IR wavelengths in a single QC laser source would greatly increase the specificity of QC laser-based spectroscopic systems, and also make them more compact and field deployable. This thesis presents work on several different approaches to multi-wavelength QC laser sources that take advantage of band-structure engineering and the uni-polar nature of QC lasers. Also, since for chemical sensing, lasers with narrow linewidth are needed, work is presented on a single mode distributed feedback (DFB) QC laser. First, a compact four-wavelength QC laser source, which is based on a 2-by-2 module design, with two waveguides having QC laser stacks for two different emission wavelengths each, one with 7.0 mum/11.2 mum, and the other with 8.7 mum/12.0 mum is presented. This is the first design of a four-wavelength QC laser source with widely different emission wavelengths that uses minimal optics and electronics. Second, since there are still several unknown factors that affect QC laser performance, results on a first ever study conducted to determine the effects of waveguide side-wall roughness on QC laser performance using the two-wavelength waveguides is presented. The results are consistent with Rayleigh scattering effects in the waveguides, with roughness effecting shorter wavelengths more than longer wavelengths. Third, a versatile time-multiplexed multi-wavelength QC laser system that emits at lambda = 10.8 mum for positive and lambda = 8.6 mum for negative polarity current with microsecond time delay is presented. Such a system is the first demonstration of a time and wavelength multiplexed system that uses a single QC laser. Fourth, work on the design and fabrication of a single-mode distributed feedback (DFB) QC laser emitting at lambda ≈ 7.7 mum to be used in a QC laser based photoacoustic sensor is presented. The DFB QC laser had a temperature tuning co-efficient of 0.45 nm/K for a temperature range of 80 K to 320 K, and a side mode suppression ratio of greater than 30 dB. Finally, study on the lateral mode patterns of wide ridge QC lasers is presented. The results include the observation of degenerate and non-degenerate lateral modes in wide ridge QC lasers emitting at lambda ≈ 5.0 mum. This study was conducted with the end goal of using wide ridge QC lasers in a novel technique to spatiospectrally combine multiple transverse modes to obtain an ultra high power single spot QC laser beam.

Packaging and testing of multi-wavelength DFB laser array using REC technology

NASA Astrophysics Data System (ADS)

Ni, Yi; Kong, Xuan; Gu, Xiaofeng; Chen, Xiangfei; Zheng, Guanghui; Luan, Jia

2014-02-01

Packaging of distributed feedback (DFB) laser array based on reconstruction-equivalent-chirp (REC) technology is a bridge from chip to system, and influences the practical process of REC chip. In this paper, DFB laser arrays of 4-channel @1310 nm and 8-channel @1550 nm are packaged. Our experimental results show that both these laser arrays have uniform wavelength spacing and larger than 35 dB average Side Mode Suppression Ratio (SMSR). When I=35 mA, we obtain the total output power of 1 mW for 4-channel @1310 nm, and 227 μw for 8-channel @1550 nm respectively. The high frequency characteristics of the packaged chips are also obtained, and the requirements for 4×10 G or even 8×10 G systems can be reached. Our results demonstrate the practical and low cost performance of REC technology and indicate its potential in the future fiber-to-the-home (FTTH) application.

High-power Al-free active region (λ= 852nm) DFB laser diodes for atomic clocks and interferometry applications

NASA Astrophysics Data System (ADS)

Ligeret, V.; Vermersch, F.-J.; Bansropun, S.; Lecomte, M.; Calligaro, M.; Parillaud, O.; Krakowski, M.

2017-11-01

Atomic clocks will be used in the future European positioning system Galileo. Among them, the optically pumped clocks provide a better alternative with comparable accuracy for a more compact system. For these systems, diode lasers emitting at 852nm are strategic components. The laser in a conventional bench for atomic clocks presents disadvantages for spatial applications. A better approach would be to realise a system based on a distributed-feedback laser (DFB). We have developed the technological foundations of such lasers operating at 852nm. These include an Al free active region, a single spatial mode ridge waveguide and a DFB structure. The device is a separate confinement heterostructure with a GaInP large optical cavity and a single compressive strained GaInAsP quantum well. The broad area laser diodes are characterised by low internal losses (<3cm -1 ), a high internal efficiency (94%) and a low transparency current density (100A/cm2). For an AR-HR coated ridge Fabry Perot laser, we obtain a power of 230mW with M2=1.3. An optical power of 150mW was obtained at 854nm wavelength, 20°C for AR-HR coated devices. We obtain a single spatial mode emission with M2=1.21 and a SMSR over 30dB, both at 150mW. DFB Lasers at 852.12nm, corresponding to the D2 caesium transition, were then realised with a power of 40mW, 37°C for uncoated devices. The SMSR is over 30dB and the M2=1.33 at 40mW. Furthermore, the preliminary results of the linewidth obtained with a Fabry Perot interferometer give a value of less than 2MHz.

Engineering of Semiconductor Nanocrystals for Light Emitting Applications

PubMed Central

Todescato, Francesco; Fortunati, Ilaria; Minotto, Alessandro; Signorini, Raffaella; Jasieniak, Jacek J.; Bozio, Renato

2016-01-01

Semiconductor nanocrystals are rapidly spreading into the display and lighting markets. Compared with liquid crystal and organic LED displays, nanocrystalline quantum dots (QDs) provide highly saturated colors, wide color gamut, resolution, rapid response time, optical efficiency, durability and low cost. This remarkable progress has been made possible by the rapid advances in the synthesis of colloidal QDs and by the progress in understanding the intriguing new physics exhibited by these nanoparticles. In this review, we provide support to the idea that suitably engineered core/graded-shell QDs exhibit exceptionally favorable optical properties, photoluminescence and optical gain, while keeping the synthesis facile and producing QDs well suited for light emitting applications. Solid-state laser emitters can greatly profit from QDs as efficient gain materials. Progress towards fabricating low threshold, solution processed DFB lasers that are optically pumped using one- and two-photon absorption is reviewed. In the field of display technologies, the exploitation of the exceptional photoluminescence properties of QDs for LCD backlighting has already advanced to commercial levels. The next big challenge is to develop the electroluminescence properties of QD to a similar state. We present an overview of QLED devices and of the great perspectives for next generation display and lighting technologies. PMID:28773794

Chirped Grating Tunable Lasers for the Infrared Molecular Fingerprint Spectral Region

DTIC Science & Technology

2013-09-01

lasers with chirped gratings and compare both normal DFB (pump stripe perpendicular to grating) and -DFB (pump stripe perpendicular to facets...structure. Because the period of grating increases gradually laterally, wavelength tuning is implemented by shifting pump stripe to different positions on...tilted with respect to facets and adjusting the pump stripe normal to the grating. Continuous tuning of 30 nm around 3.1 µm with 320 mW single facet

CW Performance of an InGaAs-GaAs-AlGaAs Laterally-Coupled Distributed Feedback (LC-DFB) Ridge Laser Diode

NASA Technical Reports Server (NTRS)

Martin, R. D.; Forouhar, S.; Keo, S.; Lang, R. J.; Hunsperger, R. G.; Tiberio, R. C.; Chapman, P. F.

1995-01-01

Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. We demonstrate InGaAs-GaAs-AlGaAs DFB lasers fabricated from a single epitaxial growth using lateral evanescent coupling of the optical field to a surface grating etehed along the sides of the ridge. A CW threshold current of 25 mA and external quantum efficiency of 0.48 mW/mA per facet were measured for a 1 mm cavity length device with anti-reflection coated facets. Single-mode output powers as high as 11 mW per facet at 935 nm wavelength were attained. A coupling coefficient of at least 5.8/cm was calculated from the subthreshold spectrum taking into account the 2% residual facet reflectivity.

High Efficiency, Low Power-Consumption DFB Quantum Cascade Lasers Without Lateral Regrowth

NASA Astrophysics Data System (ADS)

Jia, Zhi-Wei; Wang, Li-Jun; Zhang, Jin-Chuan; Liu, Feng-Qi; Zhou, Yu-Hong; Wang, Dong-Bo; Jia, Xue-Feng; Zhuo, Ning; Liu, Jun-Qi; Zhai, Shen-Qiang; Wang, Zhan-Guo

2017-04-01

Very low power-consumption distributed feedback (DFB) quantum cascade lasers (QCLs) at the wavelength around 4.9 μm were fabricated by conventional process without lateral regrowth of InP:Fe or using sidewall grating. Benefitted from the optimized materials and low waveguide loss, very low threshold current density of 0.5 kA/cm2 was obtained for a device with cavity length of 2 mm. Combined with the partial-high-reflection coating, the 1-mm-long DFB QCL achieved low power-consumption continuous wave (CW) operation up to 105 °C. The CW threshold power-consumptions were 0.72 and 0.78 W at 15 and 25 °C, respectively. The maximum CW output power was over 110 mW at 15 °C and still more than 35 mW at 105 °C. At 15 °C, wall-plug efficiency of 5.5% and slope efficiency of 1.8 W/A were deduced, which were very high for low power-consumption DFB QCLs.

2.75 THz tuning with a triple-DFB laser system at 1550 nm and InGaAs photomixers

NASA Astrophysics Data System (ADS)

Deninger, Anselm J.; Roggenbuck, A.; Schindler, S.; Preu, S.

2015-03-01

To date, exploiting the full bandwidth of state-of-the-art InGaAs photomixers for generation and detection of continuous-wave (CW) THz radiation (typ. ~50 GHz to ~3 THz) required complex and costly external-cavity diode lasers with motorized resonator control. Distributed feedback (DFB) lasers, by contrast, are compact and inexpensive, but the tuning range per diode is limited to ~600 GHz at 1.5 μm. In this paper, we show that a combination of three DFB diodes covers the complete frequency range from 0 - 2750 GHz without any gaps. In combination with InGaAs-based photomixers for terahertz generation and detection, the system achieves a dynamic range of > 100 dB at 56 GHz, 64 dB at 1000 GHz, and 26 dB at 2500 GHz. A field-programmable gate array (FPGA)-based lock-in amplifier permits a flexible adjustment of the integration time from 0.5 ms to 600 ms. Employing an optimized "fast scan" mode, a spectrum of ~1200 GHz - the bandwidth of each subset of two lasers - and 40 MHz steps is acquired in less than one minute, still maintaining a reasonable dynamic range. To the best of our knowledge, the bandwidth of 2.75 THz presents a new record for DFB-based CW-terahertz systems.

Compact CH4 sensor based on difference frequency mixing of diode lasers in quasi-phasematched LiNbO3

NASA Technical Reports Server (NTRS)

Lancaster, D. G.; Weidner, R.; Richter, D.; Tittel, F. K.; Limpert, J.

2000-01-01

A compact, portable and robust room temperature CH4 sensor is reported. By difference frequency mixing a 500 mW alpha-DFB diode laser at 1066 nm and an erbium-doped fiber amplified 1574 nm DFB diode laser in periodically poled lithium niobate up to 7 (mu)W of narrowband radiation at 3.3 microns is generated. Real-time monitoring of CH4 over a 7 day period using direct absorption in an open-path multipass cell (L = 36 m) demonstrates a detection precision of +/- 14 ppb.

Influence of the UV-induced fiber loss on the distributed feedback fiber lasers

NASA Astrophysics Data System (ADS)

Fan, Wei; Chen, Bai; Qiao, Qiquan; Chen, Jialing; Lin, Zunqi

2003-06-01

It was found that the output power of the distributed feedback fiber lasers would be improved after annealing or left unused for several days after the laser had been fabricated, and the output of the fundamental mode would not increase but be clamped while the ±1 order modes would be predominant with the enhancement of the coupling coefficient during the fabrication. The paper discussed the influence of UV-induced fiber loss on the fiber phase-shifted DFB lasers. Due to the gain saturation and fiber internal loss, which included the temperament loss and permanent loss, there was an optimum coupling coefficient for the DFB fiber lasers that the higher internal fiber loss corresponded to the lower optimum values of coupling coefficient.

Acoustic Emission Source Location Using a Distributed Feedback Fiber Laser Rosette

PubMed Central

Huang, Wenzhu; Zhang, Wentao; Li, Fang

2013-01-01

This paper proposes an approach for acoustic emission (AE) source localization in a large marble stone using distributed feedback (DFB) fiber lasers. The aim of this study is to detect damage in structures such as those found in civil applications. The directional sensitivity of DFB fiber laser is investigated by calculating location coefficient using a method of digital signal analysis. In this, autocorrelation is used to extract the location coefficient from the periodic AE signal and wavelet packet energy is calculated to get the location coefficient of a burst AE source. Normalization is processed to eliminate the influence of distance and intensity of AE source. Then a new location algorithm based on the location coefficient is presented and tested to determine the location of AE source using a Delta (Δ) DFB fiber laser rosette configuration. The advantage of the proposed algorithm over the traditional methods based on fiber Bragg Grating (FBG) include the capability of: having higher strain resolution for AE detection and taking into account two different types of AE source for location. PMID:24141266

10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings

NASA Astrophysics Data System (ADS)

Kang, J. H.; Wenzel, H.; Hoffmann, V.; Freier, E.; Sulmoni, L.; Unger, R.-S.; Einfeldt, S.; Wernicke, T.; Kneissl, M.

2018-02-01

Single longitudinal mode operation of laterally coupled distributed feedback (DFB) laser diodes (LDs) based on GaN containing 10th-order surface Bragg gratings with V-shaped grooves is demonstrated using i-line stepper lithography and inductively coupled plasma etching. A threshold current of 82 mA, a slope efficiency of 1.7 W/A, a single peak emission at 404.5 nm with a full width at half maximum of 0.04 nm and a side mode suppression ratio of > 23 dB at an output power of about 46 mW were achieved under pulsed operation. The shift of the lasing wavelength of DFB LDs with temperature was around three times smaller than that of conventional ridge waveguide LDs.

Modulation of frequency doubled DFB-tapered diode lasers for medical treatment

NASA Astrophysics Data System (ADS)

Christensen, Mathias; Hansen, Anders K.; Noordegraaf, Danny; Jensen, Ole B.; Skovgaard, Peter M. W.

2017-02-01

The use of visible lasers for medical treatments is on the rise, and together with this comes higher expectations for the laser systems. For many medical treatments, such as ophthalmology, doctors require pulse on demand operation together with a complete extinction of the light between pulses. We have demonstrated power modulation from 0.1 Hz to 10 kHz at 532 nm with a modulation depth above 97% by wavelength detuning of the laser diode. The laser diode is a 1064 nm monolithic device with a distributed feedback (DFB) laser as the master oscillator (MO), and a tapered power amplifier (PA). The MO and PA have separate electrical contacts and the modulation is achieved with wavelength tuning by adjusting the current through the MO 40 mA.

Single-Mode, Distributed Feedback Interband Cascade Lasers

NASA Technical Reports Server (NTRS)

Frez, Clifford F. (Inventor); Borgentun, Carl E. (Inventor); Briggs, Ryan M. (Inventor); Bagheri, Mahmood (Inventor); Forouhar, Siamak (Inventor)

2016-01-01

Single-mode, distributed feedback interband cascade lasers (ICLs) using distributed-feedback gratings (e.g., lateral Bragg gratings) and methods of fabricating such ICLs are provided. The ICLs incorporate distributed-feedback gratings that are formed above the laser active region and adjacent the ridge waveguide (RWG) of the ICL. The ICLs may incorporate a double-ridge system comprising an optical confinement structure (e.g., a RWG) disposed above the laser active region that comprises the first ridge of the double ridge system, a DFB grating (e.g., lateral Bragg grating) disposed above the laser active region and adjacent the optical confinement structure, and an electric confinement structure that passes at least partially through the laser active region and that defines the boundary of the second ridge comprises and the termination of the DFB grating.

Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Tao; Hosoda, Takashi; Shterengas, Leon

The laterally coupled distributed feedback (LC-DFB) GaSb-based type-I quantum well cascade diode lasers using the second- and the sixth-order gratings to stabilize the output spectrum near 3.22 μm were designed and fabricated in this paper. The laser heterostructure contained three cascades. The devices were manufactured using a single dry etching step defining the ~5-μm-wide ridge with ~5-μm-wide gratings sections adjacent to the ridge sides. The grating coupling coefficients were estimated to be about 1 cm -1. The stability of the single-frequency operation was ensured by alignment of the DFB mode to the relatively wide gain peak. The 2-mm-long second-order LC-DFBmore » lasers generated above 10 mW of continuous-wave (CW) output power at 20°C in epi-side-up configuration and demonstrated power conversion efficiency above 2%. The sixth-order LC-DFB lasers showed lower efficiency but still generated several milliwatts of CW output power. Finally, the devices demonstrated a CW current tuning range of about 3.5 nm at the temperature of 20°C.« less

Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22 μm

DOE PAGES

Feng, Tao; Hosoda, Takashi; Shterengas, Leon; ...

2017-10-18

The laterally coupled distributed feedback (LC-DFB) GaSb-based type-I quantum well cascade diode lasers using the second- and the sixth-order gratings to stabilize the output spectrum near 3.22 μm were designed and fabricated in this paper. The laser heterostructure contained three cascades. The devices were manufactured using a single dry etching step defining the ~5-μm-wide ridge with ~5-μm-wide gratings sections adjacent to the ridge sides. The grating coupling coefficients were estimated to be about 1 cm -1. The stability of the single-frequency operation was ensured by alignment of the DFB mode to the relatively wide gain peak. The 2-mm-long second-order LC-DFBmore » lasers generated above 10 mW of continuous-wave (CW) output power at 20°C in epi-side-up configuration and demonstrated power conversion efficiency above 2%. The sixth-order LC-DFB lasers showed lower efficiency but still generated several milliwatts of CW output power. Finally, the devices demonstrated a CW current tuning range of about 3.5 nm at the temperature of 20°C.« less

Compact DFB laser modules with integrated isolator at 935 nm

NASA Astrophysics Data System (ADS)

Reggentin, M.; Thiem, H.; Tsianos, G.; Malach, M.; Hofmann, J.; Plocke, T.; Kneier, M.; Richter, L.

2018-02-01

New developments in industrial applications and applications under rough environmental conditions within the field of spectroscopy and quantum technology in the 935 nm wavelength regime demand new compact, stable and robust laser systems. Beside a stable laser source the integration of a compact optical isolator is necessary to reduce size and power consumption for the whole laser system. The integration of a suitable optical isolator suppresses back reflections from the following optical system efficiently. However, the miniaturization of the optics inside the package leads to high optical power density levels that make a more detailed analysis of the components and their laser damage threshold necessary. We present test results on compact stable DFB laser sources (butterfly style packages) with newly integrated optical isolators operating around 935 nm. The presented data includes performance and lifetime tests for the laser diodes as well as package components. Overall performance data of the packaged laser diodes will be shown as well.

High Efficiency, Low Power-Consumption DFB Quantum Cascade Lasers Without Lateral Regrowth.

PubMed

Jia, Zhi-Wei; Wang, Li-Jun; Zhang, Jin-Chuan; Liu, Feng-Qi; Zhou, Yu-Hong; Wang, Dong-Bo; Jia, Xue-Feng; Zhuo, Ning; Liu, Jun-Qi; Zhai, Shen-Qiang; Wang, Zhan-Guo

2017-12-01

Very low power-consumption distributed feedback (DFB) quantum cascade lasers (QCLs) at the wavelength around 4.9 μm were fabricated by conventional process without lateral regrowth of InP:Fe or using sidewall grating. Benefitted from the optimized materials and low waveguide loss, very low threshold current density of 0.5 kA/cm 2 was obtained for a device with cavity length of 2 mm. Combined with the partial-high-reflection coating, the 1-mm-long DFB QCL achieved low power-consumption continuous wave (CW) operation up to 105 °C. The CW threshold power-consumptions were 0.72 and 0.78 W at 15 and 25 °C, respectively. The maximum CW output power was over 110 mW at 15 °C and still more than 35 mW at 105 °C. At 15 °C, wall-plug efficiency of 5.5% and slope efficiency of 1.8 W/A were deduced, which were very high for low power-consumption DFB QCLs.

Stabilizing operation point technique based on the tunable distributed feedback laser for interferometric sensors

NASA Astrophysics Data System (ADS)

Mao, Xuefeng; Zhou, Xinlei; Yu, Qingxu

2016-02-01

We describe a stabilizing operation point technique based on the tunable Distributed Feedback (DFB) laser for quadrature demodulation of interferometric sensors. By introducing automatic lock quadrature point and wavelength periodically tuning compensation into an interferometric system, the operation point of interferometric system is stabilized when the system suffers various environmental perturbations. To demonstrate the feasibility of this stabilizing operation point technique, experiments have been performed using a tunable-DFB-laser as light source to interrogate an extrinsic Fabry-Perot interferometric vibration sensor and a diaphragm-based acoustic sensor. Experimental results show that good tracing of Q-point was effectively realized.

Evaluation of 2.1μm DFB lasers for space applications

NASA Astrophysics Data System (ADS)

Barbero, J.; López, D.; Esquivias, I.; Tijero, J. M. G.; Fischer, M.; Roessner, K.; Koeth, J.; Zahir, M.

2017-11-01

This paper presents the results obtained in the frame of an ESA-funded project called "Screening and Preevaluation of Shortwave Infrared Laser Diode for Space Application" with the objective of verifying the maturity of state of the art SWIR DFB lasers at 2.1μm to be used for space applications (mainly based on the occultation measurement principle and spectroscopy). The paper focus on the functional and environmental evaluation test plan. It includes high precision characterization, mechanical test (vibration and SRS shocks), thermal cycling, gamma and proton radiation tests, life test and some details of the Destructive Physical Analysis performed. The electro-optical characterization includes measurements of the tuning capabilities of the laser both by current and by temperature, the wavelength stability and the optical power versus laser current.

Organic holographic polymer dispersed liquid crystal distributed feedback laser from different diffraction orders

NASA Astrophysics Data System (ADS)

Liu, Minghuan; Liu, Yonggang; Zhang, Guiyang; Peng, Zenghui; Li, Dayu; Ma, Ji; Xuan, Li

2016-11-01

Holographic polymer dispersed liquid crystal (HPDLC) based distributed feedback (DFB) lasers were prepared with poly (-methoxy-5-(2‧-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV) film as the active medium layer. The HPDLC grating film was fabricated via holographic induced photopolymerization. The pure film spectra of MEH-PPV and the amplified spontaneous emission (ASE) spectrum were investigated. The laser device was single-longitudinal mode operation. The tunability of the HPDLC DFB laser was achieved by selecting different grating periods. The lasing performances were also characterized and compared from different diffraction orders. The lasing threshold increased with the diffraction order and the third order laser possessed the largest conversion efficiency in this device. The experimental results were in good agreement with the theoretical calculations.

DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants

NASA Technical Reports Server (NTRS)

Boenke, Myra M.; Wu, M. C.; Wang, Shyh; Clark, William M., Jr.; Stevens, Eugene H.

1989-01-01

A static plasma grating has been demonstrated experimentally (Wu et al., 1988) in a large-optical-cavity focused-ion-beam-distributed-Bragg-reflector (FIB-DBR) GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam. The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimizaton of the laser design is developed and presented. The computed results show that the coupling coefficient k can be increased by more than an order of magnitude over the 15/cm experimentally. Therefore, FIB-DBR or FIB-distributed-feedback (DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.

FM and FSK response of tunable two-electrode DFB lasers and their performance with noncoherent detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Willner, A.E.; Kuznetsov, M.; Kaminow, I.P.

1989-12-01

Two-electrode DFB lasers show promise for combining high speed and frequency tunability for FDM-FSK networks. The authors have measured the FM and FSK response of such lasers up to modulation frequencies of {approximately} GHz. Using these lasers in a noncoherent detection system in which a fiber Fabry-Perot tunable optical filter converts an FSK signal into ASK format, the authors demonstrate 10{sup {minus}9} BER up to 1 Gbit/s. Nonuniform FM response and consequent tone broadening of the optical-filtering FSK spectra can lead to system power penalties due to optical-filtering effects. Thus, for a given FM response, they can project the behaviormore » of these lasers in FSK optical systems.« less

[Mid-infrared distributed-feedback quantum cascade laser-based photoacoustic detection of trace methane gas].

PubMed

Tan, Song; Liu, Wan-feng; Wang, Li-jun; Zhang, Jin-chuan; Li, Lu; Liu, Jun-qi; Liu, Feng-qi; Wang, Zhan-guo

2012-05-01

There have been considerable interests in methane detection based on infrared absorption spectroscopy for industrial and environment monitoring. The authors report on the realization of photoacoustic detection of methane (CH4) using mid-infrared distributed-feedback quantum cascade laser (DFB-QCL). The absorption line at 1316.83 cm(-1) was selected for CH4 detection, which can be reached by the self-manufactured DFB-QCL source operating in pulsed mode near 7.6 microm at room-temperature. The CH4 gas is filled to a Helmholtz resonant photoacoustic cell, which was equipped with a commercial electret microphone. The DFB-QCL was operated at 234 Hz with an 80 mW optical peak power. A detection limit of 189 parts per billion in volume was derived when the signal-to-noise ratio equaled 1.

Distributed feedback laser diode integrated with distributed Bragg reflector for continuous-wave terahertz generation.

PubMed

Kim, Namje; Han, Sang-Pil; Ryu, Han-Cheol; Ko, Hyunsung; Park, Jeong-Woo; Lee, Donghun; Jeon, Min Yong; Park, Kyung Hyun

2012-07-30

A widely tunable dual mode laser diode with a single cavity structure is demonstrated. This novel device consists of a distributed feedback (DFB) laser diode and distributed Bragg reflector (DBR). Micro-heaters are integrated on the top of each section for continuous and independent wavelength tuning of each mode. By using a single gain medium in the DFB section, an effective common optical cavity and common modes are realized. The laser diode shows a wide tunability of the optical beat frequency, from 0.48 THz to over 2.36 THz. Continuous wave THz radiation is also successfully generated with low-temperature grown InGaAs photomixers from 0.48 GHz to 1.5 THz.

GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating.

PubMed

Shindo, Takahiko; Okumura, Tadashi; Ito, Hitomi; Koguchi, Takayuki; Takahashi, Daisuke; Atsumi, Yuki; Kang, Joonhyun; Osabe, Ryo; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa

2011-01-31

We fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-μm stripe width and 300-μm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.

A single-frequency Ho:YLF pulsed laser with frequency stability better than 500 kHz

NASA Astrophysics Data System (ADS)

Kucirek, P.; Meissner, A.; Nyga, S.; Mertin, J.; Höfer, M.; Hoffmann, H.-D.

2017-03-01

The spectral stability of a previously reported Ho:YLF single frequency pulsed laser oscillator emitting at 2051 nm is drastically improved by utilizing a narrow linewidth Optically Pumped Semiconductor Laser (OPSL) as a seed for the oscillator. The oscillator is pumped by a dedicated gain-switched Tm:YLF laser at 1890 nm. The ramp-and-fire method is employed for generating single frequency emission. The heterodyne technique is used to analyze the spectral properties. The laser is designed to meet a part of the specifications for future airborne or space borne LIDAR detection of CO2. Seeding with a DFB diode and with an OPSL are compared. With OPSL seeding an Allan deviation of the centroid of the spectral distribution of 38 kHz and 517 kHz over 10 seconds and 60 milliseconds of sampling time for single pulses is achieved. The spectral width is approximately 30 MHz. The oscillator emits 2 mJ pulse energy with 50 Hz pulse repetition frequency (PRF) and 20 ns pulse duration. The optical to optical efficiency of the Ho:YLF oscillator is 10 % and the beam quality is diffraction limited. To our knowledge this is the best spectral stability demonstrated to date for a Ho:YLF laser with millijoule pulse energy and nanosecond pulse duration.

Stable Single-Mode Operation of Distributed Feedback Quantum Cascade Laser by Optimized Reflectivity Facet Coatings

NASA Astrophysics Data System (ADS)

Wang, Dong-Bo; Zhang, Jin-Chuan; Cheng, Feng-Min; Zhao, Yue; Zhuo, Ning; Zhai, Shen-Qiang; Wang, Li-Jun; Liu, Jun-Qi; Liu, Shu-Man; Liu, Feng-Qi; Wang, Zhan-Guo

2018-02-01

In this work, quantum cascade lasers (QCLs) based on strain compensation combined with two-phonon resonance design are presented. Distributed feedback (DFB) laser emitting at 4.76 μm was fabricated through a standard buried first-order grating and buried heterostructure (BH) processing. Stable single-mode emission is achieved under all injection currents and temperature conditions without any mode hop by the optimized antireflection (AR) coating on the front facet. The AR coating consists of a double layer dielectric of Al2O3 and Ge. For a 2-mm laser cavity, the maximum output power of the AR-coated DFB-QCL was more than 170 mW at 20 °C with a high wall-plug efficiency (WPE) of 4.7% in a continuous-wave (CW) mode.

Unidirectional photonic wire laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khalatpour, Ali; Reno, John L.; Kherani, Nazir P.

Photonic wire lasers are a new genre of lasers that have a transverse dimension much smaller than the wavelength. Unidirectional emission is highly desirable as most of the laser power will be in the desired direction. Owing to their small lateral dimension relative to the wavelength, however, the mode mostly propagates outside the solid core. Consequently, conventional approaches to attach a highly reflective element to the rear facet, whether a thin film or a distributed Bragg reflector, are not applicable. In this paper, we propose a simple and effective technique to achieve unidirectionality. Terahertz quantum-cascade lasers with distributed feedback (DFB)more » were chosen as the platform of the photonic wire lasers. Unidirectionality is achieved with a power ratio of the forward/backward of about eight, and the power of the forward-emitting laser is increased by a factor of 1.8 compared with a reference bidirectional DFB laser. Finally and furthermore, we achieved a wall plug power efficiency of ~1%.« less

Unidirectional photonic wire laser

DOE PAGES

Khalatpour, Ali; Reno, John L.; Kherani, Nazir P.; ...

2017-08-07

Photonic wire lasers are a new genre of lasers that have a transverse dimension much smaller than the wavelength. Unidirectional emission is highly desirable as most of the laser power will be in the desired direction. Owing to their small lateral dimension relative to the wavelength, however, the mode mostly propagates outside the solid core. Consequently, conventional approaches to attach a highly reflective element to the rear facet, whether a thin film or a distributed Bragg reflector, are not applicable. In this paper, we propose a simple and effective technique to achieve unidirectionality. Terahertz quantum-cascade lasers with distributed feedback (DFB)more » were chosen as the platform of the photonic wire lasers. Unidirectionality is achieved with a power ratio of the forward/backward of about eight, and the power of the forward-emitting laser is increased by a factor of 1.8 compared with a reference bidirectional DFB laser. Finally and furthermore, we achieved a wall plug power efficiency of ~1%.« less

Optical feedback in dfb quantum cascade laser for mid-infrared cavity ring-down spectroscopy

NASA Astrophysics Data System (ADS)

Terabayashi, Ryohei; Sonnenschein, Volker; Tomita, Hideki; Hayashi, Noriyoshi; Kato, Shusuke; Jin, Lei; Yamanaka, Masahito; Nishizawa, Norihiko; Sato, Atsushi; Nozawa, Kohei; Hashizume, Kenta; Oh-hara, Toshinari; Iguchi, Tetsuo

2017-11-01

A simple external optical feedback system has been applied to a distributed feedback quantum cascade laser (DFB QCL) for cavity ring-down spectroscopy (CRDS) and a clear effect of feedback was observed. A long external feedback path length of up to 4m can decrease the QCL linewidth to around 50kHz, which is of the order of the transmission linewidth of our high finesse ring-down cavity. The power spectral density of the transmission signal from high finesse cavity reveals that the noise at frequencies above 20kHz is reduced dramatically.

Yb fiber laser pumped mid-IR source based on difference frequency generation and its application to ammonia detection

NASA Technical Reports Server (NTRS)

Matsuoka, N.; Yamaguchi, S.; Nanri, K.; Fujioka, T.; Richter, D.; Tittel, F. K.

2001-01-01

A Yb fiber laser pumped cw narrow-linewidth tunable mid-IR source based on a difference frequency generation (DFG) in a periodically poled LiNbO3 (PPLN) crystal for trace gas detection was demonstrated. A high power Yb fiber laser and a distributed feedback (DFB) laser diode were used as DFG pump sources. This source generated mid-IR at 3 microns with a powers of 2.5 microW and a spectral linewidth of less than 30 MHz. A frequency tuning range of 300 GHz (10 cm-1) was obtained by varying the current and temperature of the DFB laser diode. A high-resolution NH3 absorption Doppler-broadened spectrum at 3295.4 cm-1 (3.0345 microns) was obtained at a cell pressure of 27 Pa from which a detection sensitivity of 24 ppm m was estimated.

Surface-emitting circular DFB, disk- and ring- Bragg resonator lasers with chirped gratings: a unified theory and comparative study.

PubMed

Sun, Xiankai; Yariv, Amnon

2008-06-09

We have developed a theory that unifies the analysis of the modal properties of surface-emitting chirped circular grating lasers. This theory is based on solving the resonance conditions which involve two types of reflectivities of chirped circular gratings. This approach is shown to be in agreement with previous derivations which use the characteristic equations. Utilizing this unified analysis, we obtain the modal properties of circular DFB, disk-, and ring- Bragg resonator lasers. We also compare the threshold gain, single mode range, quality factor, emission efficiency, and modal area of these types of circular grating lasers. It is demonstrated that, under similar conditions, disk Bragg resonator lasers have the highest quality factor, the highest emission efficiency, and the smallest modal area, indicating their suitability in low-threshold, high-efficiency, ultracompact laser design, while ring Bragg resonator lasers have a large single mode range, high emission efficiency, and large modal area, indicating their suitability for high-efficiency, large-area, high-power applications.

A 16-Channel Distributed-Feedback Laser Array with a Monolithic Integrated Arrayed Waveguide Grating Multiplexer for a Wavelength Division Multiplex-Passive Optical Network System Network

NASA Astrophysics Data System (ADS)

Zhao, Jian-Yi; Chen, Xin; Zhou, Ning; Huang, Xiao-Dong; Cao, Ming-De; Liu, Wen

2014-07-01

A 16-channel distributed-feedback (DFB) laser array with a monolithic integrated arrayed waveguide grating multiplexer for a wavelength division multiplex-passive optical network system is fabricated by using the butt-joint metal organic chemical vapor deposition technology and nanoimpirnt technology. The results show that the threshold current is about 20-30 mA at 25°C. The DFB laser side output power is about 16 mW with a 150 mA injection current. The lasing wavelength is from 1550 nm to 1575 nm covering a more than 25 nm range with 200 GHz channel space. A more than 55 dB sidemode suppression ratio is obtained.

Crosstalk analyse of DFB fiber laser hydrophone array based on time division multiplexing

NASA Astrophysics Data System (ADS)

Li, Yu; Huang, Junbin; Gu, Hongcan; Tang, Bo; Wu, Jing

2014-12-01

In this paper, the crosstalk of a time division multiplexed (TDM) system of distributed feedback (DFB) fiber laser (FL)hydrophones based on optical switch using Phase Generated Carrier (PGC) method was quantitatively analyzed. After mathematical deduction, the relationship among crosstalk, multiplexing scale and extinction ratio of optical switch was given. The simulation results show that to realize a TDM system of DFB fiber laser hydrophones with crosstalk lower than -40dB, the average extinction ratio should be higher than 24.78dB for a 4- channel system, while higher than 28.45dB for an 8- channel system. Two experiments to analyze the array crosstalk to a certain channel in an 8- channel array were conducted in this paper. Firstly, by testing the powers of leak laser to a certain channel from others, the array crosstalk to this channel was obtained according to the equation mathematically deduced in this paper. The result shows the array crosstalk to a certain channel of the 8-channel array was -7.6dB. An experiment of underwater acoustic detection was carried out finally to get the real array crosstalk to this certain channel, and the experimental result shows that the array crosstalk to this channel is -8.8dB, which is close to the calculated result.

Analysis of all-optical temporal integrator employing phased-shifted DFB-SOA.

PubMed

Jia, Xin-Hong; Ji, Xiao-Ling; Xu, Cong; Wang, Zi-Nan; Zhang, Wei-Li

2014-11-17

All-optical temporal integrator using phase-shifted distributed-feedback semiconductor optical amplifier (DFB-SOA) is investigated. The influences of system parameters on its energy transmittance and integration error are explored in detail. The numerical analysis shows that, enhanced energy transmittance and integration time window can be simultaneously achieved by increased injected current in the vicinity of lasing threshold. We find that the range of input pulse-width with lower integration error is highly sensitive to the injected optical power, due to gain saturation and induced detuning deviation mechanism. The initial frequency detuning should also be carefully chosen to suppress the integration deviation with ideal waveform output.

Stable Single-Mode Operation of Distributed Feedback Quantum Cascade Laser by Optimized Reflectivity Facet Coatings.

PubMed

Wang, Dong-Bo; Zhang, Jin-Chuan; Cheng, Feng-Min; Zhao, Yue; Zhuo, Ning; Zhai, Shen-Qiang; Wang, Li-Jun; Liu, Jun-Qi; Liu, Shu-Man; Liu, Feng-Qi; Wang, Zhan-Guo

2018-02-02

In this work, quantum cascade lasers (QCLs) based on strain compensation combined with two-phonon resonance design are presented. Distributed feedback (DFB) laser emitting at ~ 4.76 μm was fabricated through a standard buried first-order grating and buried heterostructure (BH) processing. Stable single-mode emission is achieved under all injection currents and temperature conditions without any mode hop by the optimized antireflection (AR) coating on the front facet. The AR coating consists of a double layer dielectric of Al 2 O 3 and Ge. For a 2-mm laser cavity, the maximum output power of the AR-coated DFB-QCL was more than 170 mW at 20 °C with a high wall-plug efficiency (WPE) of 4.7% in a continuous-wave (CW) mode.

Optoelectronic cross-injection locking of a dual-wavelength photonic integrated circuit for low-phase-noise millimeter-wave generation.

PubMed

Kervella, Gaël; Van Dijk, Frederic; Pillet, Grégoire; Lamponi, Marco; Chtioui, Mourad; Morvan, Loïc; Alouini, Mehdi

2015-08-01

We report on the stabilization of a 90-GHz millimeter-wave signal generated from a fully integrated photonic circuit. The chip consists of two DFB single-mode lasers whose optical signals are combined on a fast photodiode to generate a largely tunable heterodyne beat note. We generate an optical comb from each laser with a microwave synthesizer, and by self-injecting the resulting signal, we mutually correlate the phase noise of each DFB and stabilize the beatnote on a multiple of the frequency delivered by the synthesizer. The performances achieved beat note linewidth below 30 Hz.

Terahertz master-oscillator power-amplifier quantum cascade laser with a grating coupler of extremely low reflectivity.

PubMed

Zhu, Huan; Zhu, Haiqing; Wang, Fangfang; Chang, Gaolei; Yu, Chenren; Yan, Quan; Chen, Jianxin; Li, Lianhe; Davies, A Giles; Linfield, Edmund H; Tang, Zhou; Chen, Pingping; Lu, Wei; Xu, Gangyi; He, Li

2018-01-22

A terahertz master-oscillation power-amplifier quantum cascade laser (THz-MOPA-QCL) is demonstrated where a grating coupler is employed to efficiently extract the THz radiation. By maximizing the group velocity and eliminating the scattering of THz wave in the grating coupler, the residue reflectivity is reduced down to the order of 10 -3 . A buried DFB grating and a tapered preamplifier are proposed to improve the seed power and to reduce the gain saturation, respectively. The THz-MOPA-QCL exhibits single-mode emission, a single-lobed beam with a narrow divergence angle of 18° × 16°, and a pulsed output power of 136 mW at 20 K, which is 36 times that of a second-order DFB laser from the same material.

Demonstration of a portable near-infrared CH4 detection sensor based on tunable diode laser absorption spectroscopy

NASA Astrophysics Data System (ADS)

Zheng, Chuan-Tao; Huang, Jian-Qiang; Ye, Wei-Lin; Lv, Mo; Dang, Jing-Min; Cao, Tian-Shu; Chen, Chen; Wang, Yi-Ding

2013-11-01

A portable near-infrared (NIR) CH4 detection sensor based on a distributed feedback (DFB) laser modulated at 1.654 μm is experimentally demonstrated. Intelligent temperature controller with an accuracy of -0.07 to +0.09 °C as well as a scan and modulation module generating saw-wave and cosine-wave signals are developed to drive the DFB laser, and a cost effective lock-in amplifier used to extract the second harmonic signal is integrated. Thorough experiments are carried out to obtain detection performances, including detection range, accuracy, stability and the minimum detection limit (MDL). Measurement results show that the absolute detection error relative to the standard value is less than 7% within the range of 0-100%, and the MDL is estimated to be about 11 ppm under an absorption length of 0.2 m and a noise level of 2 mVpp. Twenty-four hours monitoring on two gas samples (0.1% and 20%) indicates that the absolute errors are less than 7% and 2.5%, respectively, suggesting good long term stability. The sensor reveals competitive characteristics compared with other reported portable or handheld sensors. The developed sensor can also be used for the detection of other gases by adopting other DFB lasers with different center-wavelength using the same hardware and slightly modified software.

Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

NASA Astrophysics Data System (ADS)

Ristanic, Daniela; Schwarz, Benedikt; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried

2015-01-01

A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm-1 at 1586 cm-1. The room temperature laser threshold current density is 3 kA/cm2 and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.

Calibration-free wavelength-modulation spectroscopy based on a swiftly determined wavelength-modulation frequency response function of a DFB laser.

PubMed

Zhao, Gang; Tan, Wei; Hou, Jiajia; Qiu, Xiaodong; Ma, Weiguang; Li, Zhixin; Dong, Lei; Zhang, Lei; Yin, Wangbao; Xiao, Liantuan; Axner, Ove; Jia, Suotang

2016-01-25

A methodology for calibration-free wavelength modulation spectroscopy (CF-WMS) that is based upon an extensive empirical description of the wavelength-modulation frequency response (WMFR) of DFB laser is presented. An assessment of the WMFR of a DFB laser by the use of an etalon confirms that it consists of two parts: a 1st harmonic component with an amplitude that is linear with the sweep and a nonlinear 2nd harmonic component with a constant amplitude. Simulations show that, among the various factors that affect the line shape of a background-subtracted peak-normalized 2f signal, such as concentration, phase shifts between intensity modulation and frequency modulation, and WMFR, only the last factor has a decisive impact. Based on this and to avoid the impractical use of an etalon, a novel method to pre-determine the parameters of the WMFR by fitting to a background-subtracted peak-normalized 2f signal has been developed. The accuracy of the new scheme to determine the WMFR is demonstrated and compared with that of conventional methods in CF-WMS by detection of trace acetylene. The results show that the new method provides a four times smaller fitting error than the conventional methods and retrieves concentration more accurately.

Modulation of distributed feedback (DFB) laser diode with the autonomous Chua's circuit: Theory and experiment

NASA Astrophysics Data System (ADS)

Talla Mbé, Jimmi Hervé; Woafo, Paul

2018-03-01

We report on a simple way to generate complex optical waveforms with very cheap and accessible equipments. The general idea consists in modulating a laser diode with an autonomous electronic oscillator, and in the case of this study, we use a distributed feedback (DFB) laser diode pumped with an electronic Chua's circuit. Based on the adiabatic P-I characteristics of the laser diode at low frequencies, we show that when the total pump is greater than the laser threshold, it is possible to convert the electrical waveforms of the Chua's circuit into optical carriers. But, if that is not the case, the on-off dynamical behavior of the laser permits to obtain many other optical waveform signals, mainly pulses. Our numerical results are consistent with experimental measurements. The work presents the advantage of extending the range of possible chaotic dynamics of the laser diodes in the time domains (millisecond) where it is not usually expected with conventional modulation techniques. Moreover, this new technique of laser diodes modulation brings a general benefit in the physical equipment, reduces their cost and congestion so that, it can constitute a step towards photonic integrated circuits.

Tunable organic distributed feedback dye laser device excited through Förster mechanism

NASA Astrophysics Data System (ADS)

Tsutsumi, Naoto; Hinode, Taiki

2017-03-01

Tunable organic distributed feedback (DFB) dye laser performances are re-investigated and characterized. The slab-type waveguide DFB device consists of air/active layer/glass substrate. Active layer consisted of tris(8-quinolinolato)aluminum (Alq3), 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM) dye, and polystyrene (PS) matrix. Effective energy transfer from Alq3 to DCM through Förster mechanism enhances the laser emission. Slope efficiency in the range of 4.9 and 10% is observed at pump energy region higher than 0.10-0.15 mJ cm-2 (lower threshold), which is due to the amplified spontaneous emission (ASE) and lasing. Typical slope efficiency for lasing in the range of 2.0 and 3.0% is observed at pump energy region higher than 0.25-0.30 mJ cm-2 (higher threshold). The tuning wavelength for the laser emission is ranged from 620 to 645 nm depending on the ASE region.

Physically transient photonics: random versus distributed feedback lasing based on nanoimprinted DNA.

PubMed

Camposeo, Andrea; Del Carro, Pompilio; Persano, Luana; Cyprych, Konrad; Szukalski, Adam; Sznitko, Lech; Mysliwiec, Jaroslaw; Pisignano, Dario

2014-10-28

Room-temperature nanoimprinted, DNA-based distributed feedback (DFB) laser operation at 605 nm is reported. The laser is made of a pure DNA host matrix doped with gain dyes. At high excitation densities, the emission of the untextured dye-doped DNA films is characterized by a broad emission peak with an overall line width of 12 nm and superimposed narrow peaks, characteristic of random lasing. Moreover, direct patterning of the DNA films is demonstrated with a resolution down to 100 nm, enabling the realization of both surface-emitting and edge-emitting DFB lasers with a typical line width of <0.3 nm. The resulting emission is polarized, with a ratio between the TE- and TM-polarized intensities exceeding 30. In addition, the nanopatterned devices dissolve in water within less than 2 min. These results demonstrate the possibility of realizing various physically transient nanophotonics and laser architectures, including random lasing and nanoimprinted devices, based on natural biopolymers.

Photonic chirped radio-frequency generator with ultra-fast sweeping rate and ultra-wide sweeping range.

PubMed

Wun, Jhih-Min; Wei, Chia-Chien; Chen, Jyehong; Goh, Chee Seong; Set, S Y; Shi, Jin-Wei

2013-05-06

A high-performance photonic sweeping-frequency (chirped) radio-frequency (RF) generator has been demonstrated. By use of a novel wavelength sweeping distributed-feedback (DFB) laser, which is operated based on the linewidth enhancement effect, a fixed wavelength narrow-linewidth DFB laser, and a wideband (dc to 50 GHz) photodiode module for the hetero-dyne beating RF signal generation, a very clear chirped RF waveform can be captured by a fast real-time scope. A very-high frequency sweeping rate (10.3 GHz/μs) with an ultra-wide RF frequency sweeping range (~40 GHz) have been demonstrated. The high-repeatability (~97%) in sweeping frequency has been verified by analyzing tens of repetitive chirped waveforms.

Jet-cooled infrared absorption spectrum of the v4 fundamental band of HCOOH and HCOOD

NASA Astrophysics Data System (ADS)

Luo, Wei; Zhang, Yulan; Li, Wenguang; Duan, Chuanxi

2017-04-01

The jet-cooled absorption spectrum of the v4 fundamental band of normal formic acid (HCOOH) and deuterated formic acid (HCOOD) was recorded in the frequency range of 1370-1392 cm-1 with distributed-feedback quantum cascade lasers (DFB-QCLs) as the tunable infrared radiations. A segmented rapid-scan data acquisition scheme was developed for pulsed supersonic jet infrared laser absorption spectroscopy based on DFB-QCLs with a moderate vacuum pumping capacity. The unperturbed band-origin and rotational constants in the excited vibrational state were determined for both HCOOH and HCOOD. The unperturbed band-origin locates at 1379.05447(11) cm-1 for HCOOH, and 1366.48430(39) cm-1 for HCOOD, respectively.

Characteristics research on self-amplified distributed feedback fiber laser

NASA Astrophysics Data System (ADS)

Song, Zhiqiang; Qi, Haifeng; Guo, Jian; Wang, Chang; Peng, Gangding

2014-09-01

A distributed feedback (DFB) fiber laser with a ratio of the backward to forward output power of 1:100 was composed by a 45-mm-length asymmetrical phase-shifted fiber grating fabricated on the 50-mm erbium-doped photosensitive fiber. Forward output laser was amplified using a certain length of Nufern EDFL-980-Hp erbium-doped fiber to absorb the surplus pump power after the active phase-shifted fiber grating and get population inversion. By using OptiSystem software, the best fiber length of the EDFL to get the highest gain was simulated. In order to keep the amplified laser with the narrow line-width and low noise, a narrow-band light filter consisting of a fiber Bragg grating (FBG) with the same Bragg wavelength as the laser and an optical circulator was used to filter the amplified spontaneous emission (ASE) noise of the out-cavity erbium-doped fiber. The designed laser structure sufficiently utilized the pump power, and a DFB fiber laser with the 32.5-mW output power, 11.5-kHz line width, and -87-dB/Hz relative intensity noise (RIN) at 300 mW of 980 nm pump power was brought out.

Method for obtaining a collimated near-unity aspect ratio output beam from a DFB-GSE laser with good beam quality.

PubMed

Liew, S K; Carlson, N W

1992-05-20

A simple method for obtaining a collimated near-unity aspect ratio output beam from laser sources with extremely large (> 100:1) aspect ratios is demonstrated by using a distributed-feedback grating-surfaceemitting laser. Far-field power-in-the-bucket measurements of the laser indicate good beam quality with a high Strehl ratio.

High performance organic distributed Bragg reflector lasers fabricated by dot matrix holography.

PubMed

Wan, Wenqiang; Huang, Wenbin; Pu, Donglin; Qiao, Wen; Ye, Yan; Wei, Guojun; Fang, Zongbao; Zhou, Xiaohong; Chen, Linsen

2015-12-14

We report distributed Bragg reflector (DBR) polymer lasers fabricated using dot matrix holography. Pairs of distributed Bragg reflector mirrors with variable mirror separations are fabricated and a novel energy transfer blend consisting of a blue-emitting conjugated polymer and a red-emitting one is spin-coated onto the patterned substrate to complete the device. Under optical pumping, the device emits sing-mode lasing around 622 nm with a bandwidth of 0.41 nm. The working threshold is as low as 13.5 μJ/cm² (~1.68 kW/cm²) and the measured slope efficiency reaches 5.2%. The distributed feedback (DFB) cavity and the DBR cavity resonate at the same lasing wavelength while the DFB laser shows a much higher threshold. We further show that flexible DBR lasers can be conveniently fabricated through the UV-imprinting technique by using the patterned silica substrate as the mold. Dot matrix holography represents a versatile approach to control the number, the size, the location and the orientation of DBR mirrors, thus providing great flexibility in designing DBR lasers.

Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ristanic, Daniela; Schwarz, Benedikt, E-mail: benedikt.schwarz@tuwien.ac.at; Reininger, Peter

A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm{sup −1} atmore » 1586 cm{sup −1}. The room temperature laser threshold current density is 3 kA∕cm{sup 2} and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.« less

Optimization of cw-QC lasers for Doppler and sub-Doppler molecular spectroscopy

NASA Astrophysics Data System (ADS)

Kelly, James F.; Disselkamp, Robert S.; Sams, Robert L.; Blake, Thomas A.; Sharpe, Steven W.; Richter, Dirk A.; Fried, Alan

2002-09-01

Inter-subband (Type I) quantum-cascade (QC) lasers have shown the potential to generate tunable mid-IR radiation with narrow intrinsic linewidths (< 160 KHz in 15 mSec sweeps) and excellent amplitude stability (< 3 ppm averaged over minutes). Our bench-scale efforts to develop the Type I distributed feedback (DFB)-QC lasers for fieldable atmospheric chemistry campaigns, where multipass (Herriot or White) cells are used to enhance path-length, have not yet realized performance to the low intrinsic noise levels seen in these devices. By comparison, many operational systems' levels of noise-equivalent-absorbance (NEA) using Pb-salt lasers can routinely achieve at least one-order of magnitude better cw-performance, and with much lower powers. We have found that instability effets from weak back-scattered laser light -primarily from the Herriot cell- results in feedback-implicated technical noise well above the thermal and shot-noise of standard IR detectors. Of more fundamental concern is the fact that planar-stripe DFB-QC lasers undergo beam steering and transverse spatial-mode competitions during current tuning. It is the development of fully automated sub-ppbV sensitive IR chem-sensors. It is possible to reach low-ppm levels of absorptance change-detection (ΔI/I0) over small wavelength regions with careful alignment to 100 M Herriott cells, but extreme care in spatial filtering is critical. However in the case of optical configurations which preclude significant optical feedback and need for stringent mode coupling alignments, the cw-DFB-QC lasers show great promise to do high resolution sub-Doppler spectroscopy. By serendipitous events, a varient of 'mode- or level-crossing' spectroscopy was probably rediscovered, which may allow very high resolution, sub-Doppler features and/or hyperfine alignments to be probed with 'uni-directional' topologies. We will primarily discuss the basic features of the 'uni-directional' sub-Doppler spectroscopy concept in this report. It shows potential to be exploitable in multi-pass cells or ring configurations. The phenomena of satuation 'dips' in molecular transitions appear to be very accessible with sinusoidally current-modulated DFB-QC lasers. Observations of sub-Doppler structures, either induced by residual AM 'pulsation dips' and/or hyperfine level-crossing effects (due to weak Zeeman splittings by the earth's B-field) can be recovered with good contrast. If this phenomena is indeed implicated with long-lived coherent hyperfine alignments, due perhaps to coherent population trapping in 'dark-states,' then sub-Doppler signals from saturated 'level-crossings' can potentially be seen without recourse to expensive polarization optics, nor elaborate beam shaping and isolation techniques.

Pulsed hybrid dual wavelength Y-branch-DFB laser-tapered amplifier system suitable for water vapor detection at 965 nm with 16 W peak power

NASA Astrophysics Data System (ADS)

Vu, Thi N.; Klehr, Andreas; Sumpf, Bernd; Hoffmann, Thomas; Liero, Armin; Tränkle, Günther

2016-03-01

A master oscillator power amplifier system emitting alternatingly at two neighbored wavelengths around 965 nm is presented. As master oscillator (MO) a Y-branch DFB-laser is used. The two branches, which can be individually controlled, deliver the two wavelengths needed for a differential absorption measurement of water vapor. Adjusting the current through the DFB sections, the wavelength can be adjusted with respect to the targeted either "on" or "off" resonance, respectively wavelength λon or wavelength λoff. The emission of this laser is amplified in a tapered amplifier (TA). The ridge waveguide section of the TA acts as optical gate to generate short pulses with duration of 8 ns at a repetition rate of 25 kHz, the flared section is used for further amplification to reach peak powers up to 16 W suitable for micro-LIDAR (Light Detection and Ranging). The necessary pulse current supply user a GaN-transistor based driver electronics placed close to the power amplifier (PA). The spectral properties of the emission of the MO are preserved by the PA. A spectral line width smaller than 10 pm and a side mode suppression ratio (SMSR) of 37 dB are measured. These values meet the demands for water vapor absorption measurements under atmospheric conditions.

100μJ-level single frequency linearly-polarized nanosecond pulsed laser at 775 nm (Conference Presentation)

NASA Astrophysics Data System (ADS)

Shi, Wei; Fang, Qiang; Fan, Jingli; Cui, Xuelong; Zhang, Zhuo; Li, Jinhui; Zhou, Guoqing

2017-02-01

We report a single frequency, linearly polarized, near diffraction-limited, pulsed laser source at 775 nm by frequency doubling a single frequency nanosecond pulsed all fiber based master oscillator-power amplifier, seeded by a fiber coupled semiconductor DFB laser diode at 1550 nm. The laser diode was driven by a pulsed laser driver to generate 5 ns laser pulses at 260 Hz repetition rate with 50 pJ pulse energy. The pulse energy was boosted to 200 μJ using two stages of core-pumped fiber amplifiers and two stages of cladding-pumped fiber amplifiers. The multi-stage synchronous pulse pumping technique was adopted in the four stages of fiber amplifiers to mitigate the ASE. The frequency doubling is implemented in a single pass configuration using a periodically poled lithium niobate (PPLN) crystal. The crystal is 3 mm long, 1.4 mm wide, 1 mm thick, with a 19.36 μm domain period chosen for quasi-phase matching at 33°C. It was AR coated at both 1550 nm and 775 nm. The maximum pulse energy of 97 μJ was achieved when 189 μJ fundamental laser was launched. The corresponding conversion efficiency is about 51.3%. The pulse duration was measured to be 4.8 ns. So the peak power of the generated 775 nm laser pulses reached 20 kW. To the best of our knowledge, this is the first demonstration of a 100 μJ-level, tens of kilowatts-peak-power-level single frequency linearly polarized 775 nm laser based on the frequency doubling of the fiber lasers.

The effect of zinc diffusion on extinction ratio of MQW electroabsorption modulator integrated with DFB laser

NASA Astrophysics Data System (ADS)

Zhou, Daibing; Zhang, Ruikang; Wang, Huitao; Wang, Baojun; Bian, Jing; An, Xin; Zhao, Lingjuan; Zhu, Hongliang; Ji, Chen; Wang, Wei

2014-11-01

Monolithically integrated electroabsorption modulated lasers (EML) are widely being used in the optical fiber communication systems, due to their low chip, compact size and good compatible with the current communication systems. In this paper, we investigated the effect of Zinc diffusion on extinction ratio of electroabsorption modulator (EAM) integrated with distributed feedback laser (DFB). EML was fabricated by selective area growth (SAG) technology. The MQW structure of different quantum energy levels was grown on n-type InP buffer layer with 150nm thick SiO2 parallel stripes mask by selective area metal-organic chemical vapor deposition (MOCVD). A 35nm photoluminescence wavelength variation was observed between the laser area (λPL=1535nm) and modulator area (λPL=1500nm) by adjusting the dimension of parallel stripes. The grating (λ=1550nm) was fabricated in the selective area. The device was mesa ridge structure, which was constituted of the DFB laser, isolation gap and modulator. The length of every part is 300μm, 50μm, and 150μm respectively. Two samples were fabricated with the same structure and different p-type Zn-doped concentration, the extinction ratio of heavy Zn-doped device is 12.5dB at -6V. In contrast, the extinction ratio of light Zn-doped device is 20dB at -6V, that was improved for approximate 60%. The different Zn diffusion depth into the MQW absorption layer was observed by Secondary ion mass spectrometer (SIMS). The heavy Zn-doped device diffused into absorption layer deeper than the light Zn-doped device, which caused the large non-uniformity of the electric field in the MQW layer. So the extinction ratio characteristics can be improved by optimizing the Zn-doped concentration of p-type layer.

First demonstration and field trial on multi-user UDWDM-PON full duplex PSK-PSK with single monolithic integrated dual-output-DFB-SOA based ONUs.

PubMed

Chu, GuangYong; Maho, Anaëlle; Cano, Iván; Polo, Victor; Brenot, Romain; Debrégeas, Hélène; Prat, Josep

2016-10-15

We demonstrate a monolithically integrated dual-output DFB-SOA, and conduct the field trial on a multi-user bidirectional coherent ultradense wavelength division multiplexing-passive optical network (UDWDM-PON). To the best of our knowledge, this is the first achievement of simplified single integrated laser-based neighboring coherent optical network units (ONUs) with a 12.5 GHz channel spaced ultra-dense access network, including both downstream and upstream, taking the benefits of low footprint and low-temperature dependence.

42.8 Gb/s ASK homodyne receiver using standard DFB lasers

NASA Astrophysics Data System (ADS)

Becker, D.; Mohr, D.; Datta, S.; Wree, C.; Bhandare, S.; Joshi, A.

2009-05-01

Optical synchronous coherent detection is attracting greater attention within the defense and security community because it allows linear recovery both of the amplitude and phase of optical signals. Fiber-based transmission impairments such as chromatic dispersion and polarization mode dispersion can be compensated in the electrical domain. Additionally, synchronous detection offers the potential of improved receiver sensitivity and extended reach versus direct or interferometric detection schemes. 28 Gbaud/112 Gb/s and 42.8 Gbaud transmissions are now being considered in fiber networks worldwide. Due to the lack of broadband high frequency components centered at IF values of 56 GHz and 86 GHz, respectively, the coherent heterodyne approach is not viable for these baud rates. The homodyne approach remains one of the choices available to fully exploit the advantages of synchronous coherent detection at these transmission data rates. In order to implement the homodyne receiver, optical phase locking between the signal and local oscillator laser (LO) is required. Digital approaches for this task rely upon very complex, fast, and high power-consumption chips. A homodyne receiver using an analog approach for phase locking would allow for increased system simplicity at a lower cost. Use of commercial-off-the-shelf (COTS) DFB lasers embedded within the receiver would also increase system feasibility for defense applications. We demonstrate synchronous demodulation of a 42.8 Gbaud signal using an analog optical phase-locked loop. The homodyne system was optimized to use COTS DFB lasers having an aggregate linewidth of ~2 MHz. We also analyze the impact of uncompensated phase noise on receiver performance.

Novel hybrid laser modes in composite VCSEL-DFB microcavities (Conference Presentation)

NASA Astrophysics Data System (ADS)

Mischok, Andreas; Wagner, Tim; Sudzius, Markas; Brückner, Robert; Fröb, Hartmut; Lyssenko, Vadim G.; Leo, Karl

2017-02-01

Two of the most successful microcresonator concepts are the vertical cavity surface emitting laser (VCSEL), where light is confined between distributed Bragg reflectors (DBRs), and the distributed feedback (DFB) laser, where a periodic grating provides positive optical feedback to selected modes in an active waveguide (WG) layer. Our work concerns the combination of both into a composite device, facilitating coherent interaction between both regimes and giving rise to novel laser modes in the system. In a first realization, a full VCSEL stack with an organic active layer is evaporated on top of a diffraction grating with a large period (approximately 1 micron), leading to diffraction of waveguided modes into the surface emission of the device. Here, the coherent interaction between VCSEL and WG modes, as observed in an anticrossing of the dispersion lines, facilitates novel hybrid lasing modes with macroscopic in-plane coherence [1]. In further studies, we decrease the grating period of such devices to realise DFB conditions in a second-order Bragg grating which strongly couples photons via first-order light diffraction to the VCSEL. This efficient coupling can be compared to more classical cascade-coupled cavities and is successfully described by a coupled oscillator model [2]. When both resonators are non-degenerate, they are able to function as independent structures without substantial diffraction losses. The realization of such novel devices provides a promising platform for photonic circuits based on organic microlasers. [1] A. Mischok et al., Adv. Opt. Mater., early online, DOI: 10.1002/adom.201600282, (2016) [2] T. Wagner et al., Appl. Phys. Lett., accepted, in production, (2016)

Quantum Cascade Lasers Modulation and Applications

NASA Astrophysics Data System (ADS)

Luzhansky, Edward

The mid-wave IR (MWIR) spectral band, extending from 3 to 5 microns, is considered to be a low loss atmospheric window. There are several spectral sub-bands with relatively low atmospheric attenuation in this region making it popular for various commercial and military applications. Relatively low thermal and solar background emissions, effective penetration through the natural and anthropogenic obscurants and eye safety add to the long list of advantages of MWIR wavelengths. Quantum Cascade Lasers are compact semiconductor devices capable of operating in MWIR spectrum. They are based on inter-subband transitions in a multiple-quantum-well (QW) hetero-structure, designed by means of band-structure engineering. The inter-subband nature of the optical transition has several key advantages. First, the emission wavelength is primarily a function of the QW thickness. This characteristic allows choosing well-understood and reliable semiconductors for the generation of light in a wavelength range of interest. Second, a cascade process in which tens of photons are generated per injected electron. This cascading process is behind the intrinsic high-power capabilities of QCLs. This dissertation is focused on modulation properties of Quantum Cascade Lasers. Both amplitude and phase/frequency modulations were studied including modulation bandwidth, modulation efficiency and chirp linearity. Research was consisted of the two major parts. In the first part we describe the theory of frequency modulation (FM) response of Distributed Feedback Quantum Cascade Lasers (DFB QCL). It includes cascading effect on the QCL's maximum modulation frequency. The "gain levering" effect for the maximum FM response of the two section QCLs was studied as well. In the second part of research we concentrated on the Pulse Position Amplitude Modulation of a single section QCL. The low complexity, low size, weight and power Mid-Wavelength Infra-Red optical communications transceiver concept is introduced. The concept was realized and tested in the laboratory environment. The resilience to atmospheric impairments are analyzed with simulated turbulence. The performance compared to typical telecom based Short Wavelength Infra-Red transceiver.

1310 nm quantum dot DFB lasers with high dot density and ultra-low linewidth-power product

NASA Technical Reports Server (NTRS)

Qiu, Y.; Lester, L. F.; Gray, A. L.; Newell, T. C.; Hains, C.; Gogna, P.; Muller, R.; Maker, P.; Su, H.; Stintz, A.

2002-01-01

Laterally coupled distributed feedback lasers using high-density InAs quantum dots-in-a-well (DWELL) active region demonstrate a nominal wavelength of 1310 nm, a linewidth as small as 68 kHz, and a linewidth-power product of 100 kHz-mW.

Optical frequency locked loop for long-term stabilization of broad-line DFB laser frequency difference

NASA Astrophysics Data System (ADS)

Lipka, Michał; Parniak, Michał; Wasilewski, Wojciech

2017-09-01

We present an experimental realization of the optical frequency locked loop applied to long-term frequency difference stabilization of broad-line DFB lasers along with a new independent method to characterize relative phase fluctuations of two lasers. The presented design is based on a fast photodiode matched with an integrated phase-frequency detector chip. The locking setup is digitally tunable in real time, insensitive to environmental perturbations and compatible with commercially available laser current control modules. We present a simple model and a quick method to optimize the loop for a given hardware relying exclusively on simple measurements in time domain. Step response of the system as well as phase characteristics closely agree with the theoretical model. Finally, frequency stabilization for offsets within 4-15 GHz working range achieving <0.1 Hz long-term stability of the beat note frequency for 500 s averaging time period is demonstrated. For these measurements we employ an I/Q mixer that allows us to precisely and independently measure the full phase trace of the beat note signal.

Liquid-phase epitaxy grown PbSnTe distributed feedback laser diodes with broad continuous single-mode tuning range

NASA Technical Reports Server (NTRS)

Hsieh, H.-H.; Fonstad, C. G.

1980-01-01

Distributed feedback (DFB) pulsed laser operation has been demonstrated in stripe geometry Pb(1-x)Sn(x)Te double-heterostructures grown by liquid-phase epitaxy. The grating structure of 0.79 micron periodicity operates in first order near 12.8 microns and was fabricated prior to the liquid-phase epitaxial growth using holographic exposure techniques. These DFB lasers had moderate thresholds, 3.6 kA/sq cm, and the output power versus current curves exhibited a sharp turn-on free of kinks. Clean, single-mode emission spectra, continuously tunable over a range in excess of 20 per cm, centered about 780 per cm (12.8 microns), and at an average rate of 1.2 per cm-K from 9 to 26 K, were observed. While weaker modes could at times be seen in the spectrum, substantially single-mode operation was obtained over the entire operating range and to over 10 times threshold.

High power laser source for atom cooling based on reliable telecoms technology with all fibre frequency stabilisation

NASA Astrophysics Data System (ADS)

Legg, Thomas; Farries, Mark

2017-02-01

Cold atom interferometers are emerging as important tools for metrology. Designed into gravimeters they can measure extremely small changes in the local gravitational field strength and be used for underground surveying to detect buried utilities, mineshafts and sinkholes prior to civil works. To create a cold atom interferometer narrow linewidth, frequency stabilised lasers are required to cool the atoms and to setup and measure the atom interferometer. These lasers are commonly either GaAs diodes, Ti Sapphire lasers or frequency doubled InGaAsP diodes and fibre lasers. The InGaAsP DFB lasers are attractive because they are very reliable, mass-produced, frequency controlled by injection current and simply amplified to high powers with fibre amplifiers. In this paper a laser system suitable for Rb atom cooling, based on a 1560nm DFB laser and erbium doped fibre amplifier, is described. The laser output is frequency doubled with fibre coupled periodically poled LiNbO3 to a wavelength of 780nm. The output power exceeds 1 W at 780nm. The laser is stabilised at 1560nm against a fibre Bragg resonator that is passively temperature compensated. Frequency tuning over a range of 1 GHz is achieved by locking the laser to sidebands of the resonator that are generated by a phase modulator. This laser design is attractive for field deployable rugged systems because it uses all fibre coupled components with long term proven reliability.

Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions.

PubMed

Klehr, A; Wenzel, H; Brox, O; Schwertfeger, S; Staske, R; Erbert, G

2013-02-11

We present detailed experimental investigations of the temporal, spectral and spatial behavior of a gain-switched distributed feedback (DFB) laser emitting at a wavelength of 1064 nm. Gain-switching is achieved by injecting nearly rectangular shaped current pulses having a length of 50 ns and a very high amplitude up to 2.5 A. The repetition frequency is 200 kHz. The laser has a ridge waveguide (RW) for lateral waveguiding with a ridge width of 3 µm and a cavity length of 1.5 mm. Time resolved investigations show, depending on the amplitude of the current pulses, that the optical power exhibits different types of oscillatory behavior during the pulses, accompanied by changes in the lateral near field intensity profiles and optical spectra. Three different types of instabilities can be distinguished: mode beating with frequencies between 25 GHz and 30 GHz, switching between different lateral intensity profiles with a frequency of 0.4 GHz and self-sustained oscillations with a frequency of 4 GHz. The investigations are of great relevance for the utilization of gain-switched DFB-RW lasers as seed lasers for fiber laser systems and in other applications, which require a high optical power.

Fundamental characteristics of degradation-recoverable solid-state DFB polymer laser.

PubMed

Yoshioka, Hiroaki; Yang, Yu; Watanabe, Hirofumi; Oki, Yuji

2012-02-13

A novel solid-state dye laser with degradation recovery was proposed and demonstrated. Polydimethylsiloxane was used as a nanoporous solid matrix to enable the internal circulation of dye molecules in the solid state. An internal circulation model for the dye molecules was also proposed and verified numerically by assuming molecular mobility and using a proposed diffusion equation. The durability of the laser was increased 20.5-fold compared with that of a conventional polymethylmethacrylate laser. This novel laser solves the low-durability problem of dye-doped polymer lasers.

Multipath interference test method using synthesized chirped signal from directly modulated DFB-LD with digital-signal-processing technique.

PubMed

Aida, Kazuo; Sugie, Toshihiko

2011-12-12

We propose a method of testing transmission fiber lines and distributed amplifiers. Multipath interference (MPI) is detected as a beat spectrum between a multipath signal and a direct signal using a synthesized chirped test signal with lightwave frequencies of f(1) and f(2) periodically emitted from a distributed feedback laser diode (DFB-LD). This chirped test pulse is generated using a directly modulated DFB-LD with a drive signal calculated using a digital signal processing technique (DSP). A receiver consisting of a photodiode and an electrical spectrum analyzer (ESA) detects a baseband power spectrum peak appearing at the frequency of the test signal frequency deviation (f(1)-f(2)) as a beat spectrum of self-heterodyne detection. Multipath interference is converted from the spectrum peak power. This method improved the minimum detectable MPI to as low as -78 dB. We discuss the detailed design and performance of the proposed test method, including a DFB-LD drive signal calculation algorithm with DSP for synthesis of the chirped test signal and experiments on single-mode fibers with discrete reflections. © 2011 Optical Society of America

Narrow-band generation in random distributed feedback fiber laser.

PubMed

Sugavanam, Srikanth; Tarasov, Nikita; Shu, Xuewen; Churkin, Dmitry V

2013-07-15

Narrow-band emission of spectral width down to ~0.05 nm line-width is achieved in the random distributed feedback fiber laser employing narrow-band fiber Bragg grating or fiber Fabry-Perot interferometer filters. The observed line-width is ~10 times less than line-width of other demonstrated up to date random distributed feedback fiber lasers. The random DFB laser with Fabry-Perot interferometer filter provides simultaneously multi-wavelength and narrow-band (within each line) generation with possibility of further wavelength tuning.

Radio-Frequency Down-Conversion via Sampled Analog Optical Links

DTIC Science & Technology

2010-08-09

temporal intensity Popt(ω) includes intensity noise quantities arising from the optical source (e.g. laser intensity noise, amplified spontaneous emission...nm distributed feedback laser RF Down-Conversion via Sampled Links 5 (DFB, EM4, Inc.) the output of which is modulated via a low-biased Mach-Zehnder...Figure 5 (a). For comparison purposes the RF gain of one arm of the balanced link (utilizing a continuous- wave laser source) is measured and

Performance Optimization Design for a High-Speed Weak FBG Interrogation System Based on DFB Laser.

PubMed

Yao, Yiqiang; Li, Zhengying; Wang, Yiming; Liu, Siqi; Dai, Yutang; Gong, Jianmin; Wang, Lixin

2017-06-22

A performance optimization design for a high-speed fiber Bragg grating (FBG) interrogation system based on a high-speed distributed feedback (DFB) swept laser is proposed. A time-division-multiplexing sensor network with identical weak FBGs is constituted to realize high-capacity sensing. In order to further improve the multiplexing capacity, a waveform repairing algorithm is designed to extend the dynamic demodulation range of FBG sensors. It is based on the fact that the spectrum of an FBG keeps stable over a long period of time. Compared with the pre-collected spectra, the distorted spectra waveform are identified and repaired. Experimental results show that all the identical weak FBGs are distinguished and demodulated at the speed of 100 kHz with a linearity of above 0.99, and the range of dynamic demodulation is extended by 40%.

High-Power DFB Diode Laser-Based CO-QEPAS Sensor: Optimization and Performance.

PubMed

Ma, Yufei; Tong, Yao; He, Ying; Yu, Xin; Tittel, Frank K

2018-01-04

A highly sensitive carbon monoxide (CO) trace gas sensor based on quartz-enhanced photoacoustic spectroscopy (QEPAS) was demonstrated. A high-power distributed feedback (DFB), continuous wave (CW) 2.33 μm diode laser with an 8.8 mW output power was used as the QEPAS excitation source. By optimizing the modulation depth and adding an optimum micro-resonator, compared to a bare quartz tuning fork (QTF), a 10-fold enhancement of the CO-QEPAS signal amplitude was achieved. When water vapor acting as a vibrational transfer catalyst was added to the target gas, the signal was further increased by a factor of ~7. A minimum detection limit (MDL) of 11.2 ppm and a calculated normalized noise equivalent absorption (NNEA) coefficient of 1.8 × 10 -5 cm -1 W/√Hz were obtained for the reported CO-QEPAS sensor.

High-Power DFB Diode Laser-Based CO-QEPAS Sensor: Optimization and Performance

PubMed Central

Ma, Yufei; Tong, Yao; He, Ying; Yu, Xin

2018-01-01

A highly sensitive carbon monoxide (CO) trace gas sensor based on quartz-enhanced photoacoustic spectroscopy (QEPAS) was demonstrated. A high-power distributed feedback (DFB), continuous wave (CW) 2.33 μm diode laser with an 8.8 mW output power was used as the QEPAS excitation source. By optimizing the modulation depth and adding an optimum micro-resonator, compared to a bare quartz tuning fork (QTF), a 10-fold enhancement of the CO-QEPAS signal amplitude was achieved. When water vapor acting as a vibrational transfer catalyst was added to the target gas, the signal was further increased by a factor of ~7. A minimum detection limit (MDL) of 11.2 ppm and a calculated normalized noise equivalent absorption (NNEA) coefficient of 1.8 × 10−5 cm−1W/√Hz were obtained for the reported CO-QEPAS sensor. PMID:29300310

Performance Optimization Design for a High-Speed Weak FBG Interrogation System Based on DFB Laser

PubMed Central

Yao, Yiqiang; Li, Zhengying; Wang, Yiming; Liu, Siqi; Dai, Yutang; Gong, Jianmin; Wang, Lixin

2017-01-01

A performance optimization design for a high-speed fiber Bragg grating (FBG) interrogation system based on a high-speed distributed feedback (DFB) swept laser is proposed. A time-division-multiplexing sensor network with identical weak FBGs is constituted to realize high-capacity sensing. In order to further improve the multiplexing capacity, a waveform repairing algorithm is designed to extend the dynamic demodulation range of FBG sensors. It is based on the fact that the spectrum of an FBG keeps stable over a long period of time. Compared with the pre-collected spectra, the distorted spectra waveform are identified and repaired. Experimental results show that all the identical weak FBGs are distinguished and demodulated at the speed of 100 kHz with a linearity of above 0.99, and the range of dynamic demodulation is extended by 40%. PMID:28640187

Low Power Consumption Substrate-Emitting DFB Quantum Cascade Lasers.

PubMed

Liu, Chuan-Wei; Zhang, Jin-Chuan; Jia, Zhi-Wei; Zhuo, Ning; Zhai, Shen-Qiang; Wang, Li-Jun; Liu, Jun-Qi; Liu, Shu-Man; Liu, Feng-Qi; Wang, Zhan-Guo

2017-09-02

In the present work, an ultra-low power consumption substrate-emitting distributed feedback (DFB) quantum cascade laser (QCL) was developed. The continuous-wave (CW) threshold power dissipation is reduced to 0.43 W at 25 °C by shortening the cavity length to 0.5 mm and depositing high-reflectivity (HR) coating on both facets. As far as we know, this is the recorded threshold power dissipation of QCLs in the same conditions. Single-mode emission was achieved by employing a buried second-order grating. Mode-hop free emission can be observed within a wide temperature range from 15 to 105 °C in CW mode. The divergence angles are 22.5 o and 1.94 o in the ridge-width direction and cavity-length direction, respectively. The maximum optical power in CW operation was 2.4 mW at 25 °C, which is sufficient to spectroscopy applications.

Low Power Consumption Substrate-Emitting DFB Quantum Cascade Lasers

NASA Astrophysics Data System (ADS)

Liu, Chuan-Wei; Zhang, Jin-Chuan; Jia, Zhi-Wei; Zhuo, Ning; Zhai, Shen-Qiang; Wang, Li-Jun; Liu, Jun-Qi; Liu, Shu-Man; Liu, Feng-Qi; Wang, Zhan-Guo

2017-09-01

In the present work, an ultra-low power consumption substrate-emitting distributed feedback (DFB) quantum cascade laser (QCL) was developed. The continuous-wave (CW) threshold power dissipation is reduced to 0.43 W at 25 °C by shortening the cavity length to 0.5 mm and depositing high-reflectivity (HR) coating on both facets. As far as we know, this is the recorded threshold power dissipation of QCLs in the same conditions. Single-mode emission was achieved by employing a buried second-order grating. Mode-hop free emission can be observed within a wide temperature range from 15 to 105 °C in CW mode. The divergence angles are 22.5o and 1.94o in the ridge-width direction and cavity-length direction, respectively. The maximum optical power in CW operation was 2.4 mW at 25 °C, which is sufficient to spectroscopy applications.

Differential carrier phase recovery for QPSK optical coherent systems with integrated tunable lasers.

PubMed

Fatadin, Irshaad; Ives, David; Savory, Seb J

2013-04-22

The performance of a differential carrier phase recovery algorithm is investigated for the quadrature phase shift keying (QPSK) modulation format with an integrated tunable laser. The phase noise of the widely-tunable laser measured using a digital coherent receiver is shown to exhibit significant drift compared to a standard distributed feedback (DFB) laser due to enhanced low frequency noise component. The simulated performance of the differential algorithm is compared to the Viterbi-Viterbi phase estimation at different baud rates using the measured phase noise for the integrated tunable laser.

Systematic characterization of a 1550 nm microelectromechanical (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) with 7.92 THz tuning range for terahertz photomixing systems

NASA Astrophysics Data System (ADS)

Haidar, M. T.; Preu, S.; Cesar, J.; Paul, S.; Hajo, A. S.; Neumeyr, C.; Maune, H.; Küppers, F.

2018-01-01

Continuous-wave (CW) terahertz (THz) photomixing requires compact, widely tunable, mode-hop-free driving lasers. We present a single-mode microelectromechanical system (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) featuring an electrothermal tuning range of 64 nm (7.92 THz) that exceeds the tuning range of commercially available distributed-feedback laser (DFB) diodes (˜4.8 nm) by a factor of about 13. We first review the underlying theory and perform a systematic characterization of the MEMS-VCSEL, with particular focus on the parameters relevant for THz photomixing. These parameters include mode-hop-free CW tuning with a side-mode-suppression-ratio >50 dB, a linewidth as narrow as 46.1 MHz, and wavelength and polarization stability. We conclude with a demonstration of a CW THz photomixing setup by subjecting the MEMS-VCSEL to optical beating with a DFB diode driving commercial photomixers. The achievable THz bandwidth is limited only by the employed photomixers. Once improved photomixers become available, electrothermally actuated MEMS-VCSELs should allow for a tuning range covering almost the whole THz domain with a single system.

Development of a 1 x N Fiber Optic Sensor Array for Carbon Sequestration Site Monitoring

DOE Office of Scientific and Technical Information (OSTI.GOV)

Repasky, Kevin

2014-02-01

A fiber sensor array for sub-surface CO 2 concentrations measurements was developed for monitoring geologic carbon sequestration sites. The fiber sensor array uses a single temperature tunable distributed feedback (DFB) laser operating with a nominal wavelength of 2.004 μm. Light from this DFB laser is direct to one of the 4 probes via an in-line 1 x 4 fiber optic switch. Each of the 4 probes are buried and allow the sub-surface CO 2 to enter the probe through Millipore filters that allow the soil gas to enter the probe but keeps out the soil and water. Light from themore » DFB laser interacts with the CO 2 before it is directed back through the in-line fiber optic switch. The DFB laser is tuned across two CO 2 absorption features where a transmission measurement is made allowing the CO 2 concentration to be retrieved. The fiber optic switch then directs the light to the next probe where this process is repeated allowing sub-surface CO 2 concentration measurements at each of the probes to be made as a function of time. The fiber sensor array was deployed for fifty-eight days beginning June 19, 2012 at the Zero Emission Research Technology (ZERT) field site where sub-surface CO 2 concentrations were monitored. Background measurements indicate the fiber sensor array can monitor background levels as low as 1,000 parts per million (ppm). A thirty four day sub-surface release of 0.15 tones CO 2/day began on July 10, 2012. The elevated subsurface CO 2 concentration was easily detected by each of the four probes with values ranging to over 60,000 ppm, a factor of greater than 6 higher than background measurements. The fiber sensor array was also deploy at the Big Sky Carbon Sequestration Partnership (BSCSP) site in north-central Montana between July 9th and August 7th, 2013 where background measurements were made in a remote sequestration site with minimal infrastructure. The project provided opportunities for two graduate students to participate in research directly related to geologic carbon sequestration. Furthermore, commercialization of the technology developed is being pursued with five different companies via the Department of energy SBIR/STTR program« less

Behavioral modeling and digital compensation of nonlinearity in DFB lasers for multi-band directly modulated radio-over-fiber systems

NASA Astrophysics Data System (ADS)

Li, Jianqiang; Yin, Chunjing; Chen, Hao; Yin, Feifei; Dai, Yitang; Xu, Kun

2014-11-01

The envisioned C-RAN concept in wireless communication sector replies on distributed antenna systems (DAS) which consist of a central unit (CU), multiple remote antenna units (RAUs) and the fronthaul links between them. As the legacy and emerging wireless communication standards will coexist for a long time, the fronthaul links are preferred to carry multi-band multi-standard wireless signals. Directly-modulated radio-over-fiber (ROF) links can serve as a lowcost option to make fronthaul connections conveying multi-band wireless signals. However, directly-modulated radioover- fiber (ROF) systems often suffer from inherent nonlinearities from directly-modulated lasers. Unlike ROF systems working at the single-band mode, the modulation nonlinearities in multi-band ROF systems can result in both in-band and cross-band nonlinear distortions. In order to address this issue, we have recently investigated the multi-band nonlinear behavior of directly-modulated DFB lasers based on multi-dimensional memory polynomial model. Based on this model, an efficient multi-dimensional baseband digital predistortion technique was developed and experimentally demonstrated for linearization of multi-band directly-modulated ROF systems.

Feed-forward coherent link from a comb to a diode laser: Application to widely tunable cavity ring-down spectroscopy

NASA Astrophysics Data System (ADS)

Gotti, Riccardo; Prevedelli, Marco; Kassi, Samir; Marangoni, Marco; Romanini, Daniele

2018-02-01

We apply a feed-forward frequency control scheme to establish a phase-coherent link from an optical frequency comb to a distributed feedback (DFB) diode laser: This allows us to exploit the full laser tuning range (up to 1 THz) with the linewidth and frequency accuracy of the comb modes. The approach relies on the combination of an RF single-sideband modulator (SSM) and of an electro-optical SSM, providing a correction bandwidth in excess of 10 MHz and a comb-referenced RF-driven agile tuning over several GHz. As a demonstration, we obtain a 0.3 THz cavity ring-down scan of the low-pressure methane absorption spectrum. The spectral resolution is 100 kHz, limited by the self-referenced comb, starting from a DFB diode linewidth of 3 MHz. To illustrate the spectral resolution, we obtain saturation dips for the 2ν3 R(6) methane multiplet at μbar pressure. Repeated measurements of the Lamb-dip positions provide a statistical uncertainty in the kHz range.

Fiber Laser methane sensor with the function of self-diagnose

NASA Astrophysics Data System (ADS)

Li, Yan-fang; Wei, Yu-bin; Shang, Ying; Wang, Chang; Liu, Tong-yu

2012-02-01

Using the technology of tunable diode laser absorption spectroscopy and the technology of micro-electronics, a fiber laser methane sensor based on the microprocessor C8051F410 is given. In this paper, we use the DFB Laser as the light source of the sensor. By tuning temperature and driver current of the DFB laser, we can scan the laser over the methane absorption line, Based on the Beer-Lambert law, through detect the variation of the light power before and after the absorption we realize the methane detection. It makes the real-time and online detection of methane concentration to be true, and it has the advantages just as high accuracy, immunity to other gases , long calibration cycle and so on. The sensor has the function of adaptive gain and self-diagnose. By introducing digital potentiometers, the gain of the photoelectric conversion operational amplifier can be controlled by the microprocessor according to the light power. When the gain and the conversion voltage achieve the set value, then we can consider the sensor in a fault status, and then the software will alarm us to check the status of the probe. So we improved the dependence and the stability of the measured results. At last we give some analysis on the sensor according the field application and according the present working, we have a look of our next work in the distance.

The influence of grating shape formation fluctuation on DFB laser diode threshold condition

NASA Astrophysics Data System (ADS)

Bao, Shiwei; Song, Qinghai; Xie, Chunmei

2018-03-01

Not only the grating material refractive index itself but also the Bragg grating physical shape formation affects the coupling strength greatly. The Bragg grating shape includes three factors, namely grating depth, duty ratio and grating angle. During the lithography and wet etching process, there always will be some fluctuation between the target and real grating shape formation after fabrication process. This grating shape fluctuation will affect the DFB coupling coefficient κ , and then consequently threshold current and corresponding wavelength. This paper studied the grating shape formation fluctuation influence to improve the DFB fabrication yield. A truncated normal random distribution fluctuation is considered in this paper. The simulation results conclude that it is better to choose relative thicker grating depth with lower refractive index to obtain a better fabrication tolerance, while not quite necessary to spend too much effort on improving lithography and wet etching process to get a precisely grating duty ratio and grating angle.

The influence of grating shape formation fluctuation on DFB laser diode threshold condition

NASA Astrophysics Data System (ADS)

Bao, Shiwei; Song, Qinghai; Xie, Chunmei

2018-06-01

Not only the grating material refractive index itself but also the Bragg grating physical shape formation affects the coupling strength greatly. The Bragg grating shape includes three factors, namely grating depth, duty ratio and grating angle. During the lithography and wet etching process, there always will be some fluctuation between the target and real grating shape formation after fabrication process. This grating shape fluctuation will affect the DFB coupling coefficient κ, and then consequently threshold current and corresponding wavelength. This paper studied the grating shape formation fluctuation influence to improve the DFB fabrication yield. A truncated normal random distribution fluctuation is considered in this paper. The simulation results conclude that it is better to choose relative thicker grating depth with lower refractive index to obtain a better fabrication tolerance, while not quite necessary to spend too much effort on improving lithography and wet etching process to get a precisely grating duty ratio and grating angle.

Coherent perfect rotation theory: connections with, and consequences beyond, the anti-laser

NASA Astrophysics Data System (ADS)

Crescimanno, Michael; Andrews, James; Zhou, Chuanhong; Baker, Michael

2014-05-01

Coherent Perfect Rotation (CPR) phenomena are a reversible generalization of the anti-laser. By evaluating CPR in a broad variety of common optical systems, including optical cavities and DFB and DBR structures, we illustrate its unique threshold and resonance features. This study builds intuition critical to assessing the utility of CPR in optical devices, and we detail it in a concrete application.

Laser Setup for Volume Diffractive Optical Elements Recording in Photo-Thermo-Refractive Glass

DTIC Science & Technology

2016-04-14

Total Number: PERCENT_SUPPORTEDNAME FTE Equivalent: Total Number: PERCENT_SUPPORTEDNAME FTE Equivalent: Total Number: Sub Contractors (DD882) Names of...3 1b 2 3 a b Fig. 14. Schematic of a DBR (a) and DFB (b) lasers in Yb doped PTR glass. 1a and 1b – dichroic beam splitters with HR at 1066 nm and HT

Optoelectronics for Optically Controlled Phased-Array Systems

DTIC Science & Technology

1991-11-01

Equation (1) holds for a Fabry - Perot (FP) laser as well as a DFB laser. Furthermore, gain clamping requires that hg(n)+ ( I - h)g(n,) - g,, (2) 4-2 where...and (3.) gain-lever, with a low-Q Fabry - Perot inserted before detector. Care was taken to ensure that the DC photocurrents were nearly identical in all...operating the laser cw and scanning the Fabry - Perot . The results are shown in Fig. 4(a) and (b). In these plots, the three curves are slightly offset

Electrically and Optically Bistable Operation in an Integration of a 1310nm DFB Laser and a Tunneling Diode

NASA Astrophysics Data System (ADS)

Li, Ya-Jie; Wang, Jia-Qi; Guo, Lu; Chen, Guang-Can; Li, Zhao-Song; Yu, Hong-Yan; Zhou, Xu-Liang; Wang, Huo-Lei; Chen, Wei-Xi; Pan, Jiao-Qing

2018-04-01

Not Available Supported by the National Key Research and Development Program of China under Grant No 2017YFB0405301, and the National Natural Science Foundation of China under Grant Nos 61604144 and 61504137.

A robust optical parametric oscillator and receiver telescope for differential absorption lidar of greenhouse gases

NASA Astrophysics Data System (ADS)

Robinson, Iain; Jack, James W.; Rae, Cameron F.; Moncrieff, John B.

2015-10-01

We report the development of a differential absorption lidar instrument (DIAL) designed and built specifically for the measurement of anthropogenic greenhouse gases in the atmosphere. The DIAL is integrated into a commercial astronomical telescope to provide high-quality receiver optics and enable automated scanning for three-dimensional lidar acquisition. The instrument is portable and can be set up within a few hours in the field. The laser source is a pulsed optical parametric oscillator (OPO) which outputs light at a wavelength tunable near 1.6 μm. This wavelength region, which is also used in telecommunications devices, provides access to absorption lines in both carbon dioxide at 1573 nm and methane at 1646 nm. To achieve the critical temperature stability required for a laserbased field instrument the four-mirror OPO cavity is machined from a single aluminium block. A piezoactuator adjusts the cavity length to achieve resonance and this is maintained over temperature changes through the use of a feedback loop. The laser output is continuously monitored with pyroelectric detectors and a custom-built wavemeter. The OPO is injection seeded by a temperature-stabilized distributed feedback laser diode (DFB-LD) with a wavelength locked to the absorption line centre (on-line) using a gas cell containing pure carbon dioxide. A second DFB-LD is tuned to a nearby wavelength (off-line) to provide the reference required for differential absorption measurements. A similar system has been designed and built to provide the injection seeding wavelengths for methane. The system integrates the DFB-LDs, drivers, locking electronics, gas cell and balanced photodetectors. The results of test measurements of carbon dioxide are presented and the development of the system is discussed, including the adaptation required for the measurement of methane.

Optoelectronics components and technology for optical networking in China: recent progress and future trends

NASA Astrophysics Data System (ADS)

Jiang, Shan; Liu, Shuihua

2004-04-01

Current optical communication systems are more and more relying on the advanced opto-electronic components. A series of revolutionary optical and optoelectronics components technology accounts for the fast progress and field deployment of high-capacity telecommunication and data-transmission systems. Since 1990s, the optical communication industry in China entered a high-speed development period and its wide deployment had already established the solid base for China information infrastructure. In this presentation, the main progress of optoelectronics components and technology in China are reviewed, which includes semiconductor laser diode/photo receiver, fiber optical amplifier, DWDM multiplexer/de-multiplexer, dispersion compensation components and all optical network node components, such as optical switch, OADM, tunable optical filters and variable optical attenuators, etc. Integration discrete components into monolithic/hybrid platform component is an inevitable choice for the consideration of performance, mass production and cost reduction. The current status and the future trends of OEIC and PIC components technology in China will also be discuss mainly on the monolithic integration DFB LD + EA modulator, and planar light-wave circuit (PLC) technology, etc.

Experimental demonstration of non-iterative interpolation-based partial ICI compensation in100G RGI-DP-CO-OFDM transport systems.

PubMed

Mousa-Pasandi, Mohammad E; Zhuge, Qunbi; Xu, Xian; Osman, Mohamed M; El-Sahn, Ziad A; Chagnon, Mathieu; Plant, David V

2012-07-02

We experimentally investigate the performance of a low-complexity non-iterative phase noise induced inter-carrier interference (ICI) compensation algorithm in reduced-guard-interval dual-polarization coherent-optical orthogonal-frequency-division-multiplexing (RGI-DP-CO-OFDM) transport systems. This interpolation-based ICI compensator estimates the time-domain phase noise samples by a linear interpolation between the CPE estimates of the consecutive OFDM symbols. We experimentally study the performance of this scheme for a 28 Gbaud QPSK RGI-DP-CO-OFDM employing a low cost distributed feedback (DFB) laser. Experimental results using a DFB laser with the linewidth of 2.6 MHz demonstrate 24% and 13% improvement in transmission reach with respect to the conventional equalizer (CE) in presence of weak and strong dispersion-enhanced-phase-noise (DEPN), respectively. A brief analysis of the computational complexity of this scheme in terms of the number of required complex multiplications is provided. This practical approach does not suffer from error propagation while enjoying low computational complexity.

Tri-channel single-mode terahertz quantum cascade laser.

PubMed

Wang, Tao; Liu, Jun-Qi; Liu, Feng-Qi; Wang, Li-Jun; Zhang, Jin-Chuan; Wang, Zhan-Guo

2014-12-01

We report on a compact THz quantum cascade laser source emitting at, individually controllable, three different wavelengths (92.6, 93.9, and 95.1 μm). This multiwavelength laser array can be used as a prototype of the emission source of THz wavelength division multiplex (WDM) wireless communication system. The source consists of three tapered single-mode distributed feedback (DFB) terahertz quantum cascade lasers fabricated monolithically on a single chip. All array elements feature longitudinal as well as lateral single-mode in the entire injection range. The peak output powers of individual lasers are 42, 73, and 37 mW at 10 K, respectively.

Semiconductor Lasers and Their Application in Optical Fiber Communication.

ERIC Educational Resources Information Center

Agrawal, Govind P.

1985-01-01

Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

Influence of an Interfacial Effect on the Laser Performance of a Rhodamine 6G/Cellulose Acetate Waveguide on a Vinylidene Fluoride Copolymer Layer.

PubMed

Tsutsumi, Naoto; Hirano, Yoshinori; Kinashi, Kenji; Sakai, Wataru

2018-06-12

The fluorescent properties of dyes and fluorophores in condensed matter significantly affect the laser performance of organic dye lasers and fluorescent polymer lasers. Concentration quenching of fluorescence is commonly observed in condensed matter. Several approaches have been presented to suppress such quenching, such as the use of a dendrimer and the use of effective energy transfer in a guest-host system. The enhanced fluorescence of rhodamine 6G (R6G) dye on a vinylidene fluoride polymer is an alternative method for enhancing laser performance because of the roughness of the P(VDF-TrFE) surface and the interaction between polar β-crystals of P(VDF-TrFE) and R6G dye. In this paper, a significant improvement in slope efficiency (SE) is demonstrated without a significant depression in the lasing threshold for distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers fabricated using an R6G-dispersed cellulose acetate (CA) matrix spin-coated onto a copolymer of vinylidene fluoride and trifluoroethylene P(VDF-TrFE) thin film. SEs of 3.4 and 1.3% were measured for DBR and DFB laser devices with CA/R6G on a P(VDF-TrFE) thin film, respectively, whereas an SE of less than 1.0% was measured for both corresponding laser devices without a P(VDF-TrFE) thin film. From the aspect of simple fabrication procedures, repeatability in device fabrication and performance, stability of the device, time for device fabrication, the present approach is the most preferable way for industrial applications, requiring only the additional step of spin-coating of a P(VDF-TrFE) thin film.

Imaging of gaseous oxygen through DFB laser illumination

NASA Astrophysics Data System (ADS)

Cocola, L.; Fedel, M.; Tondello, G.; Poletto, L.

2016-05-01

A Tunable Diode Laser Absorption Spectroscopy setup with Wavelength Modulation has been used together with a synchronous sampling imaging sensor to obtain two-dimensional transmission-mode images of oxygen content. Modulated laser light from a 760nm DFB source has been used to illuminate a scene from the back while image frames were acquired with a high dynamic range camera. Thanks to synchronous timing between the imaging device and laser light modulation, the traditional lock-in approach used in Wavelength Modulation Spectroscopy was replaced by image processing techniques, and many scanning periods were averaged together to allow resolution of small intensity variation over the already weak absorption signals from oxygen absorption band. After proper binning and filtering, the time-domain waveform obtained from each pixel in a set of frames representing the wavelength scan was used as the single detector signal in a traditional TDLAS-WMS setup, and so processed through a software defined digital lock-in demodulation and a second harmonic signal fitting routine. In this way the WMS artifacts of a gas absorption feature were obtained from each pixel together with intensity normalization parameter, allowing a reconstruction of oxygen distribution in a two-dimensional scene regardless from broadband transmitted intensity. As a first demonstration of the effectiveness of this setup, oxygen absorption images of similar containers filled with either oxygen or nitrogen were acquired and processed.

Fiber Bragg grating Fabry-Perot cavity sensor based on pulse laser demodulation technique

NASA Astrophysics Data System (ADS)

Gao, Fangfang; Chen, Jianfeng; Liu, Yunqi; Wang, Tingyun

2011-12-01

We demonstrate a fiber laser sensing technique based on fiber Bragg grating Fabry-Perot (FBG-FP) cavity interrogated by pulsed laser, where short pulses generated from active mode-locked erbium-doped fiber ring laser and current modulated DFB laser are adopted. The modulated laser pulses launched into the FBG-FP cavity produce a group of reflected pulses. The optical loss in the cavity can be determined from the power ratio of the first two pulses reflected from the cavity. This technique does not require high reflectivity FBGs and is immune to the power fluctuation of the light source. Two short pulse laser sources were compared experimentally with each other on pulse width, pulse stability, pulse chirp and sensing efficiency.

Development of high sensitivity eight-element multiplexed fiber laser acoustic pressure hydrophone array and interrogation system

NASA Astrophysics Data System (ADS)

Li, Ming; Sun, Zhihui; Zhang, Xiaolei; Li, Shujuan; Song, Zhiqiang; Wang, Meng; Guo, Jian; Ni, Jiasheng; Wang, Chang; Peng, Gangding; Xu, Xiangang

2017-09-01

Fiber laser hydrophones have got widespread concerns due to the unique advantages and broad application prospects. In this paper, the research results of the eight-element multiplexed fiber laser acoustic pressure array and the interrogation system are introduced, containing low-noise distributed feedback fiber laser (DFB-FL) fabrication, sensitivity enhancement packaging, and interferometric signal demodulation. The frequency response range of the system is 10Hz-10kHz, the laser frequency acoustic pressure sensitivity reaches 115 dB re Hz/Pa, and the equivalent noise acoustic pressure is less than 60μPa/Hz1/2. The dynamic range of the system is greater than 120 dB.

MEASUREMENTS OF AMMONIA (NH3) AND CARBON DIOXIDE (CO2) WITH DISTRIBUTED FEEDBACK (DFB) LASERS NEAR MICROMETERS IN BIOREACTOR VENT GASES. (R827123)

EPA Science Inventory

The perspectives, information and conclusions conveyed in research project abstracts, progress reports, final reports, journal abstracts and journal publications convey the viewpoints of the principal investigator and may not represent the views and policies of ORD and EPA. Concl...

SPECTROSCOPY-MEASUREMENTS OF NH3 AND CO2 WITH DISTRIBUTED FEEDBACK (DFB) LASERS NEAR 2 MM IN BIOREACTOR VENT GASES. (R827123)

EPA Science Inventory

The perspectives, information and conclusions conveyed in research project abstracts, progress reports, final reports, journal abstracts and journal publications convey the viewpoints of the principal investigator and may not represent the views and policies of ORD and EPA. Concl...

Ten-channel InP-based large-scale photonic integrated transmitter fabricated by SAG technology

NASA Astrophysics Data System (ADS)

Zhang, Can; Zhu, Hongliang; Liang, Song; Cui, Xiao; Wang, Huitao; Zhao, Lingjuan; Wang, Wei

2014-12-01

A 10-channel InP-based large-scale photonic integrated transmitter was fabricated by selective area growth (SAG) technology combined with butt-joint regrowth (BJR) technology. The SAG technology was utilized to fabricate the electroabsorption modulated distributed feedback (DFB) laser (EML) arrays at the same time. The design of coplanar electrodes for electroabsorption modulator (EAM) was used for the flip-chip bonding package. The lasing wavelength of DFB laser could be tuned by the integrated micro-heater to match the ITU grids, which only needs one electrode pad. The average output power of each channel is 250 μW with an injection current of 200 mA. The static extinction ratios of the EAMs for 10 channels tested are ranged from 15 to 27 dB with a reverse bias of 6 V. The frequencies of 3 dB bandwidth of the chip for each channel are around 14 GHz. The novel design and simple fabrication process show its enormous potential in reducing the cost of large-scale photonic integrated circuit (LS-PIC) transmitter with high chip yields.

Nonlinearity-aware 200  Gbit/s DMT transmission for C-band short-reach optical interconnects with a single packaged electro-absorption modulated laser.

PubMed

Zhang, Lu; Hong, Xuezhi; Pang, Xiaodan; Ozolins, Oskars; Udalcovs, Aleksejs; Schatz, Richard; Guo, Changjian; Zhang, Junwei; Nordwall, Fredrik; Engenhardt, Klaus M; Westergren, Urban; Popov, Sergei; Jacobsen, Gunnar; Xiao, Shilin; Hu, Weisheng; Chen, Jiajia

2018-01-15

We experimentally demonstrate the transmission of a 200 Gbit/s discrete multitone (DMT) at the soft forward error correction limit in an intensity-modulation direct-detection system with a single C-band packaged distributed feedback laser and traveling-wave electro absorption modulator (DFB-TWEAM), digital-to-analog converter and photodiode. The bit-power loaded DMT signal is transmitted over 1.6 km standard single-mode fiber with a net rate of 166.7 Gbit/s, achieving an effective electrical spectrum efficiency of 4.93 bit/s/Hz. Meanwhile, net rates of 174.2 Gbit/s and 179.5 Gbit/s are also demonstrated over 0.8 km SSMF and in an optical back-to-back case, respectively. The feature of the packaged DFB-TWEAM is presented. The nonlinearity-aware digital signal processing algorithm for channel equalization is mathematically described, which improves the signal-to-noise ratio up to 3.5 dB.

Genomic and proteomic studies on the effects of the insect growth regulator diflubenzuron in the model beetle species Tribolium castaneum.

PubMed

Merzendorfer, Hans; Kim, Hee Shin; Chaudhari, Sujata S; Kumari, Meera; Specht, Charles A; Butcher, Stephen; Brown, Susan J; Manak, J Robert; Beeman, Richard W; Kramer, Karl J; Muthukrishnan, Subbaratnam

2012-04-01

Several benzoylphenyl urea-derived insecticides such as diflubenzuron (DFB, Dimilin) are in wide use to control various insect pests. Although this class of compounds is known to disrupt molting and to affect chitin content, their precise mode of action is still not understood. To gain a broader insight into the mechanism underlying the insecticidal effects of benzoylphenyl urea compounds, we conducted a comprehensive study with the model beetle species and stored product pest Tribolium castaneum (red flour beetle) utilizing genomic and proteomic approaches. DFB was added to a wheat flour-based diet at various concentrations and fed to larvae and adults. We observed abortive molting, hatching defects and reduced chitin amounts in the larval cuticle, the peritrophic matrix and eggs. Electron microscopic examination of the larval cuticle revealed major structural changes and a loss of lamellate structure of the procuticle. We used a genomic tiling array for determining relative expression levels of about 11,000 genes predicted by the GLEAN algorithm. About 6% of all predicted genes were more than 2-fold up- or down-regulated in response to DFB treatment. Genes encoding enzymes involved in chitin metabolism were unexpectedly unaffected, but many genes encoding cuticle proteins were affected. In addition, several genes presumably involved in detoxification pathways were up-regulated. Comparative 2D gel electrophoresis of proteins extracted from the midgut revealed 388 protein spots, of which 7% were significantly affected in their levels by DFB treatment as determined by laser densitometry. Mass spectrometric identification revealed that UDP-N-acetylglucosamine pyrophosphorylase and glutathione synthetase were up-regulated. In summary, the red flour beetle turned out to be a good model organism for investigating the global effects of bioactive materials such as insect growth regulators and other insecticides. The results of this study recapitulate all of the different DFB-induced symptoms in a single model insect, which have been previously found in several different insect species, and further illustrate that DFB treatment causes a wide range of effects at the molecular level. Copyright © 2011 Elsevier Ltd. All rights reserved.

High power and single mode quantum cascade lasers.

PubMed

Bismuto, Alfredo; Bidaux, Yves; Blaser, Stéphane; Terazzi, Romain; Gresch, Tobias; Rochat, Michel; Muller, Antoine; Bonzon, Christopher; Faist, Jerome

2016-05-16

We present a single mode quantum cascade laser with nearly 1 W optical power. A buried distributed feedback reflector is used on the back section for wavelength selection. The laser is 6 mm long, 3.5 μm wide, mounted episide-up and the laser facets are left uncoated. Laser emission is centered at 4.68 μm. Single-mode operation with a side mode suppression ratio of more than 30 dB is obtained in whole range of operation. Farfield measurements prove a symmetric, single transverse-mode emission in TM00-mode with typical divergences of 41° and 33° in the vertical and horizontal direction respectively. This work shows the potential for simple fabrication of high power lasers compatible with standard DFB processing.

1 Tb/s x km multimode fiber link combining WDM transmission and low-linewidth lasers.

PubMed

Gasulla, I; Capmany, J

2008-05-26

We have successfully demonstrated an error-free transmission of 10 x 20 Gb/s 200 GHz-spaced ITU channels through a 5 km link of 62.5-microm core-diameter graded-index multimode silica fiber. The overall figure corresponds to an aggregate bit rate per length product of 1 Tb/s x km, the highest value ever reported to our knowledge. Successful transmission is achieved by a combination of low-linewidth DFB lasers and the central launch technique.

Industrial integration of high coherence tunable single frequency semiconductor lasers based on VECSEL technology for scientific instrumentation in NIR and MIR

NASA Astrophysics Data System (ADS)

Lecocq, Vincent; Chomet, Baptiste; Ferrières, Laurence; Myara, Mikhaël.; Beaudoin, Grégoire; Sagnes, Isabelle; Cerutti, Laurent; Denet, Stéphane; Garnache, Arnaud

2017-02-01

Laser technology is finding applications in areas such as high resolution spectroscopy, radar-lidar, velocimetry, or atomic clock where highly coherent tunable high power light sources are required. The Vertical External Cavity Surface Emitting Laser (VECSEL) technology [1] has been identified for years as a good candidate to reach high power, high coherence and broad tunability while covering a wide emission wavelength range exploiting III-V semiconductor technologies. Offering such performances in the Near- and Middle-IR range, GaAs- and Sb-based VECSEL technologies seem to be a well suited path to meet the required specifications of demanding applications. Built up in this field, our expertise allows the realization of compact and low power consumption marketable products, with performances that do not exist on the market today in the 0.8-1.1 μm and 2-2.5 μm spectral range. Here we demonstrate highly coherent broadly tunable single frequency laser micro-chip, intracavity element free, based on a patented VECSEL technology, integrated into a compact module with driving electronics. VECSEL devices emitting in the Near and Middle-IR developed in the frame of this work [2] exhibit exciting features compared to diode-pumped solid-state lasers and DFB diode lasers; they combine high power (>100mW) high temporal coherence together with a low divergence diffraction limited TEM00 beam. They exhibit a class-A dynamics with a Relative Intensity Noise as low as -140dB/Hz and at shot noise level reached above 200MHz RF frequency (up to 160GHz), a free running narrow linewidth at sub MHz level (fundamental limit at Hz level) with high spectral purity (SMSR >55dB), a linear polarization (>50dB suppression ratio), and broadband continuous tunability greater than 400GHz (< 30V piezo voltage, 6kHz cut off frequency) with total tunability up to 3THz. Those performances can all be reached thanks to the high finesse cavity of VECSEL technology, associated to ideal homogeneous QW gain behaviour [3]. In addition, the compact design without any movable intracavity elements offers a robust single frequency regime with a long term wavelength stability better than few GHz/h (ambient thermal drift limited). Those devices surpass the state of the art commercial technologies thanks to a combination of power-coherence-wavelength tunability performances and integration.

Understanding temperature tuning of the all polymer co-extruded laser

NASA Astrophysics Data System (ADS)

Crescimanno, Michael; Andrews, Jim; Aviles, Michael; Dawson, Nathan; Petrus, Joshua; Mazzocco, Anthony; Singer, Ken; Baer, Eric; Song, Hyunmin

2012-10-01

We investigate the effects of elevated temperatures on a few types of all-polymer multilayer films that were fabricated using a co-extrusion melt-process technique. We report on the anisotropic thermal expansion of the multilayer films, which affects the photonic crystal structure via constituent wise induced anisotropic strains and a change in the relative refractive indices. In addition to the characterization of these films in the temperature range of approximately 20-95 degrees C, we show the application to non-contact temperature sensing and wavelength tuning of all polymer Distributed FeedBack (DFB) lasers and Distributed Bragg Reflector (DBR) lasers.

Bibliography of Soviet Laser Developments, No. 18, October - December 1974

DTIC Science & Technology

1975-04-25

IIV Lasers, Laser Theory , Laser Biological Effects, Laser Communications, Laser Computer Technology, Holography, Laser Chemical Effects...spectros.copy of laser materials; ultrashort pulse generation; crystal growing; theoretical aspects of advanced lasers; and general laser theory Laser...Semiconductor: Mixed Junction 5 6. Semiconductor: Heterojunction ^ 7. Semiconductor: Theory 8. Nd:Glass B. Liquid Lasers 1

Early life stages of Northern shrimp (Pandalus borealis) are sensitive to fish feed containing the anti-parasitic drug diflubenzuron.

PubMed

Bechmann, Renée Katrin; Lyng, Emily; Westerlund, Stig; Bamber, Shaw; Berry, Mark; Arnberg, Maj; Kringstad, Alfhild; Calosi, Piero; Seear, Paul J

2018-05-01

Increasing use of fish feed containing the chitin synthesis inhibiting anti-parasitic drug diflubenzuron (DFB) in salmon aquaculture has raised concerns over its impact on coastal ecosystems. Larvae of Northern shrimp (Pandalus borealis) were exposed to DFB medicated feed under Control conditions (7.0 °C, pH 8.0) and under Ocean Acidification and Warming conditions (OAW, 9.5 °C and pH 7.6). Two weeks' exposure to DFB medicated feed caused significantly increased mortality. The effect of OAW and DFB on mortality of shrimp larvae was additive; 10% mortality in Control, 35% in OAW, 66% in DFB and 92% in OAW + DFB. In OAW + DFB feeding and swimming activity were reduced for stage II larvae and none of the surviving larvae developed to stage IV. Two genes involved in feeding (GAPDH and PRLP) and one gene involved in moulting (DD9B) were significantly downregulated in larvae exposed to OAW + DFB relative to the Control. Due to a shorter intermoult period under OAW conditions, the OAW + DFB larvae were exposed throughout two instead of one critical pre-moult period. This may explain the more serious sub-lethal effects for OAW + DFB than DFB larvae. A single day exposure at 4 days after hatching did not affect DFB larvae, but high mortality was observed for OAW + DFB larvae, possibly because they were exposed closer to moulting. High mortality of shrimp larvae exposed to DFB medicated feed, indicates that the use of DFB in salmon aquaculture is a threat to crustacean zooplankton. Copyright © 2018 The Authors. Published by Elsevier B.V. All rights reserved.

Development of an Eye-Safe Micro-Pulse Differential Absorption Lidar (DIAL) for Carbon Dioxide Profilings

NASA Astrophysics Data System (ADS)

Johnson, W.; Repasky, K. S.; Nehrir, A. R.; Carlsten, J.

2011-12-01

A differential absorption lidar (DIAL) for monitoring carbon dioxide (CO2) is under development at Montana State University using commercially available parts. Two distributed feedback (DFB) lasers, one at the on-line wavelength and one at the off-line wavelength are used to injection seed a fiber amplifier. The DIAL operates in the 1.57 micron carbon dioxide absorption band at an on-line wavelength of 1.5714060 microns. The laser transmitter produces 40 μJ pulses with a pulse duration of 1 μs and a pulse repetition frequency of 20 kHz. The scattered light from the laser transmitter is collected using a 28 cm diameter Schmidt-Cassegrain telescope. The light collected by the telescope is collimated and then filtered using a 0.8 nm FWHM narrowband interference filter. After the optical filter, the light is coupled into a multimode optical fiber with a 1000 μm core diameter. The output from the optical fiber is coupled into a photomultiplier tube (PMT) used to monitor the return signal. The analog output from the PMT is next incident on a discriminator producing TTL logic pulses for photon counting. The output from the PMT and discriminator is monitored using a multichannel scalar card allowing the counting of the TTL pulses as a function of range. Data from the DIAL instrument is collected in the following manner. The fiber amplifier is injection seeded first with the on-line DFB laser. The return signal as a function of range is integrated using the multichannel scalar for a user defined time, typically set at 6 s. The off-line DFB laser is then used to injection seed the fiber amplifier and the process is repeated. This process is repeated for a user defined period. The CO2 concentration as a function of range is calculated using the on-line and off-line return signals with the DIAL equation. A comparison of the CO2 concentration measured using the DIAL instrument at 1.5 km and a Li-Cor LI-820 in situ sensor located at 1.5 km from the DIAL over a 2.5 hour period indicate that the CO2 DIAL has an accuracy of ±20 parts per million (PPM).

From quantum cascade to super cascade laser a new laser design paradigm for broad spectral emission & a re-examination of current spreading

NASA Astrophysics Data System (ADS)

Le, Loan T.

Over the span of more than 20 years of development, the Quantum Cascade (QC) laser has positioned itself as the most viable mid-infrared (mid-IR) light source. Today's QC lasers emit watts of continuous wave power at room temperature. Despite significant progress, the mid-IR region remains vastly under-utilized. State-of-the-art QC lasers are found in high power defense applications and detection of trace gases with narrow absorption lines. A large number of applications, however, do not require so much power, but rather, a broadly tunable laser source to detect molecules with broad absorption features. As such, a QC laser that is broadly tunable over the entire biochemical fingerprinting region remains the missing link to markets such as non- invasive biomedical diagnostics, food safety, and stand-off detection in turbid media. In this thesis, we detail how we utilized the inherent flexibility of the QC design space to conceive a new type of laser with the potential to bridge that missing link of the QC laser to large commercial markets. Our design concept, the Super Cascade (SC) laser, works contrary to conventional laser design principle by supporting multiple independent optical transitions, each contributing to broadening the gain spectrum. We have demonstrated a room temperature laser gain medium with electroluminescence spanning 3.3-12.5 ?m and laser emission from 6.2-12.5 ?m, the record spectral width for any solid state laser gain medium. This gain bandwidth covers the entire biochemical fingerprinting region. The achievement of such a spectrally broad gain medium presents engineering challenges of how to optimally utilize the bandwidth. As of this work, a monolithi- cally integrated array of Distributed Feedback QC (DFB-QC) lasers is one of the most promising ways to fully utilize the SC gain bandwidth. Therefore, in this thesis, we explore ways of improving the yield and ease of fabrication of DFB-QC lasers, including a re-examination of the role of current spreading in QC geometry.

Differential photoacoustic spectroscopy with continuous wave lasers for non-invasive blood glucose monitoring

NASA Astrophysics Data System (ADS)

Tanaka, Y.; Tajima, T.; Seyama, M.

2018-02-01

We propose a differential photoacoustic spectroscopy (PAS), wherein two wavelengths of light with the same absorbance are selected, and differential signal is linearized by one of the two signals for a non-invasive blood glucose monitoring. PAS has the possibility to overcome the strong optical scattering in tissue, but there are still remaining issues: the water background and instability due to the variation in acoustic resonance conditions. A change in sample solution temperature is one of the causes of the variation in acoustic resonance conditions. Therefore, in this study, we investigated the sensitivity against glucose concentration under the condition where the temperature of the sample water solution ranges 30 to 40 °C. The glucose concentration change is simulated by shifting the wavelength of irradiated laser light, which can effectively change optical absorption. The temperature also affects optical absorption and the acoustic resonance condition (acoustic velocity). A distributed-feedback (DFB) laser, tunable wavelength laser (TWL) and an acoustic sensor were used to obtain the differential PAS signal. The wavelength of the DFB laser was 1.382 μm, and that of TWL was switched from 1.600 to 1.610 μm to simulate the glucose concentration change. Optical absorption by glucose occurs at around 1.600 μm. The sensitivities against temperature are almost the same: 1.9 and 1.8 %/°C for 1.600 and 1.610 μm. That is, the glucose dependence across the whole temperature range remains constant. This implies that temperature correction is available.

High-sensitivity remote detection of atmospheric pollutants and greenhouse gases at low ppm levels using near-infrared tunable diode lasers

NASA Astrophysics Data System (ADS)

Roy, Anirban; Upadhyay, Abhishek; Chakraborty, Arup Lal

2016-05-01

The concentration of atmospheric pollutants and greenhouse gases needs to be precisely monitored for sustainable industrial development and to predict the climate shifts caused by global warming. Such measurements are made on a continuous basis in ecologically sensitive and urban areas in the advanced countries. Tunable diode laser spectroscopy (TDLS) is the most versatile non-destructive technology currently available for remote measurements of multiple gases with very high selectivity (low cross-sensitivity), very high sensitivity (on the order of ppm and ppb) and under hazardous conditions. We demonstrate absolute measurements of acetylene, methane and carbon dioxide using a fielddeployable fully automated TDLS system that uses calibration-free 2f wavelength modulation spectroscopy (2f WMS) techniques with sensitivities of low ppm levels. A 40 mW, 1531.52 nm distributed feedback (DFB) diode laser, a 10 mW, 1650 nm DFB laser and a 1 mW, 2004 nm vertical cavity surface emitting laser (VCSEL) are used in the experiments to probe the P9 transition of acetylene, R4 transition of methane and R16 transition of carbon dioxide respectively. Data acquisition and on-board analysis comprises a Raspberry Pi-based embedded system that is controllable over a wireless connection. Gas concentration and pressure are simultaneously extracted by fitting the experimental signals to 2f WMS signals simulated using spectroscopic parameters obtained from the HITRAN database. The lowest detected concentration is 11 ppm for acetylene, 275 ppm for methane and 285 ppm for carbon dioxide using a 28 cm long single-pass gas cell.

Tunable diode laser absorption spectroscopy-based tomography system for on-line monitoring of two-dimensional distributions of temperature and H2O mole fraction.

PubMed

Xu, Lijun; Liu, Chang; Jing, Wenyang; Cao, Zhang; Xue, Xin; Lin, Yuzhen

2016-01-01

To monitor two-dimensional (2D) distributions of temperature and H2O mole fraction, an on-line tomography system based on tunable diode laser absorption spectroscopy (TDLAS) was developed. To the best of the authors' knowledge, this is the first report on a multi-view TDLAS-based system for simultaneous tomographic visualization of temperature and H2O mole fraction in real time. The system consists of two distributed feedback (DFB) laser diodes, a tomographic sensor, electronic circuits, and a computer. The central frequencies of the two DFB laser diodes are at 7444.36 cm(-1) (1343.3 nm) and 7185.6 cm(-1) (1391.67 nm), respectively. The tomographic sensor is used to generate fan-beam illumination from five views and to produce 60 ray measurements. The electronic circuits not only provide stable temperature and precise current controlling signals for the laser diodes but also can accurately sample the transmitted laser intensities and extract integrated absorbances in real time. Finally, the integrated absorbances are transferred to the computer, in which the 2D distributions of temperature and H2O mole fraction are reconstructed by using a modified Landweber algorithm. In the experiments, the TDLAS-based tomography system was validated by using asymmetric premixed flames with fixed and time-varying equivalent ratios, respectively. The results demonstrate that the system is able to reconstruct the profiles of the 2D distributions of temperature and H2O mole fraction of the flame and effectively capture the dynamics of the combustion process, which exhibits good potential for flame monitoring and on-line combustion diagnosis.

Tunable diode laser absorption spectroscopy-based tomography system for on-line monitoring of two-dimensional distributions of temperature and H2O mole fraction

NASA Astrophysics Data System (ADS)

Xu, Lijun; Liu, Chang; Jing, Wenyang; Cao, Zhang; Xue, Xin; Lin, Yuzhen

2016-01-01

To monitor two-dimensional (2D) distributions of temperature and H2O mole fraction, an on-line tomography system based on tunable diode laser absorption spectroscopy (TDLAS) was developed. To the best of the authors' knowledge, this is the first report on a multi-view TDLAS-based system for simultaneous tomographic visualization of temperature and H2O mole fraction in real time. The system consists of two distributed feedback (DFB) laser diodes, a tomographic sensor, electronic circuits, and a computer. The central frequencies of the two DFB laser diodes are at 7444.36 cm-1 (1343.3 nm) and 7185.6 cm-1 (1391.67 nm), respectively. The tomographic sensor is used to generate fan-beam illumination from five views and to produce 60 ray measurements. The electronic circuits not only provide stable temperature and precise current controlling signals for the laser diodes but also can accurately sample the transmitted laser intensities and extract integrated absorbances in real time. Finally, the integrated absorbances are transferred to the computer, in which the 2D distributions of temperature and H2O mole fraction are reconstructed by using a modified Landweber algorithm. In the experiments, the TDLAS-based tomography system was validated by using asymmetric premixed flames with fixed and time-varying equivalent ratios, respectively. The results demonstrate that the system is able to reconstruct the profiles of the 2D distributions of temperature and H2O mole fraction of the flame and effectively capture the dynamics of the combustion process, which exhibits good potential for flame monitoring and on-line combustion diagnosis.

Tunable diode laser absorption spectroscopy-based tomography system for on-line monitoring of two-dimensional distributions of temperature and H{sub 2}O mole fraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Lijun, E-mail: lijunxu@buaa.edu.cn; Liu, Chang; Jing, Wenyang

2016-01-15

To monitor two-dimensional (2D) distributions of temperature and H{sub 2}O mole fraction, an on-line tomography system based on tunable diode laser absorption spectroscopy (TDLAS) was developed. To the best of the authors’ knowledge, this is the first report on a multi-view TDLAS-based system for simultaneous tomographic visualization of temperature and H{sub 2}O mole fraction in real time. The system consists of two distributed feedback (DFB) laser diodes, a tomographic sensor, electronic circuits, and a computer. The central frequencies of the two DFB laser diodes are at 7444.36 cm{sup −1} (1343.3 nm) and 7185.6 cm{sup −1} (1391.67 nm), respectively. The tomographicmore » sensor is used to generate fan-beam illumination from five views and to produce 60 ray measurements. The electronic circuits not only provide stable temperature and precise current controlling signals for the laser diodes but also can accurately sample the transmitted laser intensities and extract integrated absorbances in real time. Finally, the integrated absorbances are transferred to the computer, in which the 2D distributions of temperature and H{sub 2}O mole fraction are reconstructed by using a modified Landweber algorithm. In the experiments, the TDLAS-based tomography system was validated by using asymmetric premixed flames with fixed and time-varying equivalent ratios, respectively. The results demonstrate that the system is able to reconstruct the profiles of the 2D distributions of temperature and H{sub 2}O mole fraction of the flame and effectively capture the dynamics of the combustion process, which exhibits good potential for flame monitoring and on-line combustion diagnosis.« less

New GasB-based single-mode diode lasers in the NIR and MIR spectral regime for sensor applications

NASA Astrophysics Data System (ADS)

Milde, Tobias; Hoppe, Morten; Tatenguem, Herve; Honsberg, Martin; Mordmüller, Mario; O'Gorman, James; Schade, Wolfgang; Sacher, Joachim

2018-02-01

The NIR/MIR region between 1.8μm and 3.5μm contains important absorption lines for gas detection. State of the art are InP laser based setups, which show poor gain above 1.8μm and cannot be applied beyond 2.1μm. GaSb laser show a significantly higher output power (100mW for Fabry-Perot, 30mW for DFB). The laser design is presented with simulation and actual performance data. The superior performance of the GaSb lasers is verified in gas sensing applications. TDLAS and QEPAS measurements at trace gases like CH4, CO2 and N2O are shown to prove the spectroscopy performance.

Quantum cascade lasers, systems, and applications in Europe

NASA Astrophysics Data System (ADS)

Lambrecht, Armin

2005-03-01

Since the invention of the Quantum Cascade Laser (QCL) a decade ago an impressive progress has been achieved from first low temperature pulsed laser emission to continuous wave operation at room temperature. Distributed feedback (DFB) lasers working in pulsed mode at ambient temperatures and covering a broad spectral range in the mid infrared (MIR) are commercially available now. For many industrial applications e.g. automotive exhaust control and process monitoring, laser spectroscopy is an established technique, generally using near infrared (NIR) diode lasers. However, the mid infrared (MIR) spectral region is of special interest because of much stronger absorption lines compared to NIR. The status of QCL devices, system development and applications is reviewed. Special emphasis is given to the situation in Europe where a remarkable growth of QCL related R&D can be observed.

DFB laser - External modulator fiber optic delay line for radar applications

NASA Astrophysics Data System (ADS)

Newberg, I. L.; Gee, C. M.; Thurmond, G. D.; Yen, H. W.

1989-09-01

A new application of a long fiber-optic delay line as a radar repeater in a radar test set is described. The experimental 31.6-kilometer fiber-optic link includes an external modulator operating with a distributed-feedback laser and low-loss single-mode fiber matched to the laser wavelength to obtain low dispersion for achieving large bandwidth-length performance. The successful tests, in which pulse compression peak sidelobe measurements are used to confirm the link RF phase linearity and SNR performance, show that fiber-optic links can meet the stringent phase and noise requirements of modern radars at high microwave frequencies.

Development of Detailed and Reduced Kinetics Mechanisms for Surrogates of Petroleum-Derived and Synthetic Jet Fuels

DTIC Science & Technology

2011-02-28

Meeting of Combustion, Atlanta, Georgia, paper 2A18, March 20-23, 2011. 9.2 Web Releases Sirjean, B., Dames, A., Sheen, D.A., You, X.-Q., Sung, C...was no significant interfering absorption or emission. IR diode laser absorption of CO2 and H2O: The recent commercial availability of DFB...distributed feedback) IR diode lasers in the wavelength vicinity of 2.5-2.7 microns has allowed the development of a new CO2 and H2O absorption diagnostics

Detection of biogenic CO production above vascular cell cultures using a near-room-temperature QC-DFB laser

NASA Technical Reports Server (NTRS)

Kosterev, A. A.; Tittel, F. K.; Durante, W.; Allen, M.; Kohler, R.; Gmachl, C.; Capasso, F.; Sivco, D. L.; Cho, A. Y.

2002-01-01

We report the first application of pulsed, near-room-temperature quantum cascade laser technology to the continuous detection of biogenic CO production rates above viable cultures of vascular smooth muscle cells. A computer-controlled sequence of measurements over a 9-h period was obtained, resulting in a minimum detectable CO production of 20 ppb in a 1-m optical path above a standard cell-culture flask. Data-processing procedures for real-time monitoring of both biogenic and ambient atmospheric CO concentrations are described.

A real-time multi-gases detection and concentration measurements based-on time-division multiplexed-lasers

NASA Astrophysics Data System (ADS)

Yazdandoust, Fatemeh; Tatenguem Fankem, Hervé; Milde, Tobias; Jimenez, Alvaro; Sacher, Joachim

2018-02-01

We report the development of a platform, based-on a Field-Programmable Gate Arrays (FPGAs) and suitable for Time-Division-Multiplexed DFB lasers. The designed platform is subsequently combined with a spectroscopy setup, for detection and quantification of species in a gas mixture. The experimental results show a detection limit of 460 ppm, an uncertainty of 0.1% and a computation time of less than 1000 clock cycles. The proposed system offers a high level of flexibility and is applicable to arbitrary types of gas-mixtures.

Ultrasensitive, self-calibrated cavity ring-down spectrometer for quantitative trace gas analysis.

PubMed

Chen, Bing; Sun, Yu R; Zhou, Ze-Yi; Chen, Jian; Liu, An-Wen; Hu, Shui-Ming

2014-11-10

A cavity ring-down spectrometer is built for trace gas detection using telecom distributed feedback (DFB) diode lasers. The longitudinal modes of the ring-down cavity are used as frequency markers without active-locking either the laser or the high-finesse cavity. A control scheme is applied to scan the DFB laser frequency, matching the cavity modes one by one in sequence and resulting in a correct index at each recorded spectral data point, which allows us to calibrate the spectrum with a relative frequency precision of 0.06 MHz. Besides the frequency precision of the spectrometer, a sensitivity (noise-equivalent absorption) of 4×10^-11  cm^-1  Hz^-1/2 has also been demonstrated. A minimum detectable absorption coefficient of 5×10^-12  cm^-1 has been obtained by averaging about 100 spectra recorded in 2  h. The quantitative accuracy is tested by measuring the CO₂ concentrations in N₂ samples prepared by the gravimetric method, and the relative deviation is less than 0.3%. The trace detection capability is demonstrated by detecting CO₂ of ppbv-level concentrations in a high-purity nitrogen gas sample. Simple structure, high sensitivity, and good accuracy make the instrument very suitable for quantitative trace gas analysis.

Multi-species trace gas analysis with dual-wavelength quantum cascade laser

NASA Astrophysics Data System (ADS)

Jágerská, Jana; Tuzson, Béla; Looser, Herbert; Jouy, Pierre; Hugi, Andreas; Mangold, Markus; Soltic, Patrik; Faist, Jérôme; Emmenegger, Lukas

2015-04-01

Simultaneous detection of multiple gas species using mid-IR laser spectroscopy is highly appealing for a large variety of applications ranging from air quality monitoring, medical breath analysis to industrial process control. However, state-of-the-art distributed-feedback (DFB) mid-IR lasers are usually tunable only within a narrow spectral range, which generally leads to one-laser-one-compound measurement strategy. Thus, multi-species detection involves several lasers and elaborate beam combining solutions [1]. This makes them bulky, costly, and highly sensitive to optical alignment, which limits their field deployment. In this paper, we explore an alternative measurement concept based on a dual-wavelength quantum cascade laser (DW-QCL) [2]. Such a laser can emit at two spectrally distinct wavelengths using a succession of two DFB gratings with different periodicities and a common waveguide to produce one output beam. The laser design was optimized for NOx measurements and correspondingly emits single-mode at 5.26 and 6.25 μm. Electrical separation of the respective laser sections makes it possible to address each wavelength independently. Thereby, it is possible to detect NO and NO2 species with one laser using the same optical path, without any beam combining optics, i.e. in a compact and cost-efficient single-path optical setup. Operated in a time-division multiplexed mode, the spectrometer reaches detection limits at 100 s averaging of 0.5 and 1.5 ppb for NO2 and NO, respectively. The performance of the system was validated against the well-established chemiluminescence detection while measuring the NOx emissions on an automotive test-bench, as well as monitoring the pollution at a suburban site. [1] B. Tuzson, K. Zeyer, M. Steinbacher, J. B. McManus, D. D. Nelson, M. S. Zahniser, and L. Emmenegger, 'Selective measurements of NO, NO2 and NOy in the free troposphere using quantum cascade laser spectroscopy,' Atmospheric Measurement Techniques 6, 927-936 (2013). [2] J. Jágerská, P. Jouy, A. Hugi, B. Tuzson, H. Looser, M. Mangold, M. Beck, L. Emmenegger, and J. Faist, 'Dual-wavelength quantum cascade laser for trace gas spectroscopy,' Applied Physics Letters 105, 161109-161109-4 (2014).

Advanced Optical Fiber Communication Systems.

DTIC Science & Technology

1993-02-28

feedback (DFB) laser and a fiber Fabry - Perot (FFP) interferometer for optical frequency discrimination. After the photodetector and amplification, a...filter, an envelope detector, and an integrator; these three components function in tandem as a phase demodulator . We have analyzed the nonlinearities...down-converter and FSK demodulator extract the desired video signals. The measured carrier-to-noise ratio (CNR) at the photodiode must be approximately

Method and system for powering and cooling semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Telford, Steven J; Ladran, Anthony S

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Noise Suppression on the Tunable Laser for Precise Cavity Length Displacement Measurement.

PubMed

Šmíd, Radek; Čížek, Martin; Mikel, Břetislav; Hrabina, Jan; Lazar, Josef; Číp, Ondřej

2016-09-06

The absolute distance between the mirrors of a Fabry-Perot cavity with a spacer from an ultra low expansion material was measured by an ultra wide tunable laser diode. The DFB laser diode working at 1542 nm with 1.5 MHz linewidth and 2 nm tuning range has been suppressed with an unbalanced heterodyne fiber interferometer. The frequency noise of laser has been suppressed by 40 dB across the Fourier frequency range 30-300 Hz and by 20 dB up to 4 kHz and the linewidth of the laser below 300 kHz. The relative resolution of the measurement was 10 - 9 that corresponds to 0.3 nm (sub-nm) for 0.178 m long cavity with ability of displacement measurement of 0.5 mm.

High conversion efficiency distributed feedback laser from a dye-doped holographic transmission grating

NASA Astrophysics Data System (ADS)

Liu, Lijuan; Zhang, Guiyang; Kong, Xiaobo; Liu, Yonggang; Xuan, Li

2018-01-01

A high conversion efficiency distributed feedback (DFB) laser from a dye-doped holographic polymer dispersed liquid crystal (HPDLC) transmission grating structure was reported. The alignment polyimide (PI) films were used to control the orientation of the phase separated liquid crystals (LCs) to increase the refractive index difference between the LC and the polymer, so it can provide better light feedback. The lasing wavelength located at 645.8 nm near the maximum of the amplified spontaneous emission (ASE) spectrum with the lowest threshold 0.97 μ J/pulse and the highest conversion efficiency 1.6% was obtained. The laser performance under electric field were also investigated and illustrated. The simple configuration, one-step fabrication organic dye laser shows the potential to realize ultra-low cost plastic lasers.

Single steady frequency and narrow-linewidth external-cavity semiconductor laser

NASA Astrophysics Data System (ADS)

Zhao, Weirui; Jiang, Pengfei; Xie, Fuzeng

2003-11-01

A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10-3°C by temperature control system. The experiments have been carried out and the results obtained - the spectral line width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced.

Pattern dependence in high-speed Q-modulated distributed feedback laser.

PubMed

Zhu, Hongli; Xia, Yimin; He, Jian-Jun

2015-05-04

We investigate the pattern dependence in high speed Q-modulated distributed feedback laser based on its complete physical structure and material properties. The structure parameters of the gain section as well as the modulation and phase sections are all taken into account in the simulations based on an integrated traveling wave model. Using this model, we show that an example Q-modulated DFB laser can achieve an extinction ratio of 6.8dB with a jitter of 4.7ps and a peak intensity fluctuation of less than 15% for 40Gbps RZ modulation signal. The simulation method is proved very useful for the complex laser structure design and high speed performance optimization, as well as for providing physical insight of the operation mechanism.

Ultrafast Modulation of Semiconductor Lasers Through a Terahertz Field

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Hughes, Steven; Citrin, David

1998-01-01

We demonstrate, by means of numerical simulation, a new mechanism to modulate and switch semiconductor lasers at THz and sub-THz frequency rates. A sinusoidal terahertz field applied to a semiconductor laser heats the electron-hole plasma and consequently modifies the optical susceptibility. This allows an almost linear modulation of the output power of tile semiconductor laser and leads to a faithful reproduction of the terahertz-field waveform in the emitted laser intensity.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Influence of spontaneous fluctuations on the emission spectrum of an injection semiconductor laser

NASA Astrophysics Data System (ADS)

Gulyaev, Yurii V.; Suris, Robert A.; Tager, A. A.; Élenkrig, B. B.

1988-11-01

A theoretical investigation is made of fluctuation-induced excitation of side longitudinal modes in the emission spectra of semiconductor lasers, including those with an external mirror. It is shown that nonlinear refraction of light in the active region of a semiconductor laser may result in a noise redistribution of the radiation between longitudinal resonator modes and can be responsible for the multimode nature of the average emission spectrum. An analysis is made of the influence of selectivity of an external mirror on the stability of cw operation, minimum line width, and mode composition of the emission spectra of semiconductor lasers. The conditions for maximum narrowing of the emission spectrum of a semiconductor laser with an external selective mirror are identified.

III-Nitride Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wright, Jeremy Benjamin

2014-07-01

In recent years there has been a tremendous interest in nanoscale optoelectronic devices. Among these devices are semiconductor nanowires whose diameters range from 10-100 nm. To date, nanowires have been grown using many semiconducting material systems and have been utilized as light emitting diodes, photodetectors, and solar cells. Nanowires possess a relatively large index contrast relative to their dielectric environment and can be used as lasers. A key gure of merit that allows for nanowire lasing is the relatively high optical con nement factor. In this work, I discuss the optical characterization of 3 types of III-nitride nanowire laser devices.more » Two devices were designed to reduce the number of lasing modes to achieve singlemode operation. The third device implements low-group velocity mode lasing with a photonic crystal constructed of an array of nanowires. Single-mode operation is necessary in any application where high beam quality and single frequency operation is required. III-Nitride nanowire lasers typically operate in a combined multi-longitudinal and multi-transverse mode state. Two schemes are introduced here for controlling the optical modes and achieving single-mode op eration. The rst method involves reducing the diameter of individual nanowires to the cut-o condition, where only one optical mode propagates in the wire. The second method employs distributed feedback (DFB) to achieve single-mode lasing by placing individual GaN nanowires onto substrates with etched gratings. The nanowire-grating substrate acted as a distributed feedback mirror producing single mode operation at 370 nm with a mode suppression ratio (MSR) of 17 dB. The usage of lasers for solid state lighting has the potential to further reduce U.S. lighting energy usage through an increase in emitter e ciency. Advances in nanowire fabrication, speci cally a two-step top-down approach, have allowed for the demonstration of a multi-color array of lasers on a single chip that emit vertically. By tuning the geometrical properties of the individual lasers across the array, each individual nanowire laser produced a di erent emission wavelength yielding a near continuum of laser wavelengths. I successfully fabricated an array of emitters spanning a bandwidth of 60 nm on a single chip. This was achieved in the blue-violet using III-nitride photonic crystal nanowire lasers.« less

Frequency-Modulated Microwave Photonic Links with Direct Detection: Review and Theory

DTIC Science & Technology

2010-12-15

create large amounts of signal distortion. Alternatives to MZIs have been pro- posed, including Fabry - Perot interferometers, ber Bragg gratings (FBGs...multiplexed, analog signals for applications in cable television distribution. Experimental results for a Fabry - Perot discriminated, FM subcarrier...multiplexed system were presented by [17]. An array of optical frequency modulated DFB lasers and a Fabry - Perot discriminator were used to transmit and

Water Vapour Effects in Mass Measurement

NASA Astrophysics Data System (ADS)

Khélifa, N.

2008-01-01

Water vapour density inside the mass comparator enclosure is a critical parameter whose fluctuations during mass weighing can lead to errors in the determination of an unknown mass. To monitor them, a method using DFB laser diode in the near infrared has been proposed and tested. Preliminary results of our observation of water vapour sorption and de-sorption processes from the walls and the mass standard are reported.

Natural gas pipeline leak detector based on NIR diode laser absorption spectroscopy.

PubMed

Gao, Xiaoming; Fan, Hong; Huang, Teng; Wang, Xia; Bao, Jian; Li, Xiaoyun; Huang, Wei; Zhang, Weijun

2006-09-01

The paper reports on the development of an integrated natural gas pipeline leak detector based on diode laser absorption spectroscopy. The detector transmits a 1.653 microm DFB diode laser with 10 mW and detects a fraction of the backscatter reflected from the topographic targets. To eliminate the effect of topographic scatter targets, a ratio detection technique was used. Wavelength modulation and harmonic detection were used to improve the detection sensitivity. The experimental detection limit is 50 ppmm, remote detection for a distance up to 20 m away topographic scatter target is demonstrated. Using a known simulative leak pipe, minimum detectable pipe leak flux is less than 10 ml/min.

Effect of different laser irradiation on the dysentery bacilli

NASA Astrophysics Data System (ADS)

Ou, Lin; Chen, Rong; Chen, Yanjiao; Li, Depin; Wen, Caixia

1998-08-01

The S. flexnesi, which have high drug-resistance especially in Cm, Sm, Tc, SD, were irradiated by Ar+ laser at 488 nm and semiconductor laser at 808 nm. The experiment results have shown that both Ar+ laser and semiconductor laser with power density of 1.7 w/cm2 and irradiation dose of 2000 J/cm2 can conduce to the bacterial lethality and increase the mutation rates of the bacterial drug-sensitivity, and 'Colony Count' method have the superiority over the 'Inhibacteria Ring' method. At the mean time it further indicate that the high power semiconductor laser would play an important role in the sciences of laser biological medicine. But the effect of the near infrared semiconductor laser is far lower than that of Ar+ laser of shorter wavelength at the same irradiation dose. It is clear that the output and irradiation dose of near infrared semiconductor laser shall be increased in order to get the same rates of the bacterial lethality and the drug-sensitivity mutation as Ar+ laser's.

Noise Suppression on the Tunable Laser for Precise Cavity Length Displacement Measurement

PubMed Central

Šmíd, Radek; Čížek, Martin; Mikel, Břetislav; Hrabina, Jan; Lazar, Josef; Číp, Ondřej

2016-01-01

The absolute distance between the mirrors of a Fabry-Perot cavity with a spacer from an ultra low expansion material was measured by an ultra wide tunable laser diode. The DFB laser diode working at 1542 nm with 1.5 MHz linewidth and 2 nm tuning range has been suppressed with an unbalanced heterodyne fiber interferometer. The frequency noise of laser has been suppressed by 40 dB across the Fourier frequency range 30–300 Hz and by 20 dB up to 4 kHz and the linewidth of the laser below 300 kHz. The relative resolution of the measurement was 10−9 that corresponds to 0.3 nm (sub-nm) for 0.178 m long cavity with ability of displacement measurement of 0.5 mm. PMID:27608024

All-Fiber Configuration Laser Self-Mixing Doppler Velocimeter Based on Distributed Feedback Fiber Laser.

PubMed

Wu, Shuang; Wang, Dehui; Xiang, Rong; Zhou, Junfeng; Ma, Yangcheng; Gui, Huaqiao; Liu, Jianguo; Wang, Huanqin; Lu, Liang; Yu, Benli

2016-07-27

In this paper, a novel velocimeter based on laser self-mixing Doppler technology has been developed for speed measurement. The laser employed in our experiment is a distributed feedback (DFB) fiber laser, which is an all-fiber structure using only one Fiber Bragg Grating to realize optical feedback and wavelength selection. Self-mixing interference for optical velocity sensing is experimentally investigated in this novel system, and the experimental results show that the Doppler frequency is linearly proportional to the velocity of a moving target, which agrees with the theoretical analysis commendably. In our experimental system, the velocity measurement can be achieved in the range of 3.58 mm/s-2216 mm/s with a relative error under one percent, demonstrating that our novel all-fiber configuration velocimeter can implement wide-range velocity measurements with high accuracy.

A compact tunable diode laser absorption spectrometer to monitor CO2 at 2.7 μm wavelength in hypersonic flows.

PubMed

Vallon, Raphäel; Soutadé, Jacques; Vérant, Jean-Luc; Meyers, Jason; Paris, Sébastien; Mohamed, Ajmal

2010-01-01

Since the beginning of the Mars planet exploration, the characterization of carbon dioxide hypersonic flows to simulate a spaceship's Mars atmosphere entry conditions has been an important issue. We have developed a Tunable Diode Laser Absorption Spectrometer with a new room-temperature operating antimony-based distributed feedback laser (DFB) diode laser to characterize the velocity, the temperature and the density of such flows. This instrument has been tested during two measurement campaigns in a free piston tunnel cold hypersonic facility and in a high enthalpy arc jet wind tunnel. These tests also demonstrate the feasibility of mid-infrared fiber optics coupling of the spectrometer to a wind tunnel for integrated or local flow characterization with an optical probe placed in the flow.

Estimation of Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

NASA Technical Reports Server (NTRS)

Numata, Kenji; Camp, Jordan

2012-01-01

We evaluate mechanical thermal noise in semiconductor lasers, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Our simple model determines an underlying fundamental limit for the frequency noise of free-running semiconductor laser, and provides a framework: where the noise may be potentially reduced with improved design.

Quantum cascade laser-based sensor system for nitric oxide detection

NASA Astrophysics Data System (ADS)

Tittel, Frank K.; Allred, James J.; Cao, Yingchun; Sanchez, Nancy P.; Ren, Wei; Jiang, Wenzhe; Jiang, Dongfang; Griffin, Robert J.

2015-01-01

Sensitive detection of nitric oxide (NO) at ppbv concentration levels has an important impact in diverse fields of applications including environmental monitoring, industrial process control and medical diagnostics. For example, NO can be used as a biomarker of asthma and inflammatory lung diseases such as chronic obstructive pulmonary disease. Trace gas sensor systems capable of high sensitivity require the targeting of strong rotational-vibrational bands in the mid-IR spectral range. These bands are accessible using state-of-the-art high heat load (HHL) packaged, continuous wave (CW), distributed feedback (DFB) quantum cascade lasers (QCLs). Quartz-enhanced photoacoustic spectroscopy (QEPAS) permits the design of fast, sensitive, selective, and compact sensor systems. A QEPAS sensor was developed employing a room-temperature CW DFB-QCL emitting at 5.26 μm with an optical excitation power of 60 mW. High sensitivity is achieved by targeting a NO absorption line at 1900.08 cm-1 free of interference by H2O and CO2. The minimum detection limit of the sensor is 7.5 and 1 ppbv of NO with 1and 100 second averaging time respectively . The sensitivity of the sensor system is sufficient for detecting NO in exhaled human breath, with typical concentration levels ranging from 24.0 ppbv to 54.0 ppbv.

Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module

NASA Astrophysics Data System (ADS)

Wang, Xin; Wang, Cuiluan; Wu, Xia; Zhu, Lingni; Jing, Hongqi; Ma, Xiaoyu; Liu, Suping

2017-02-01

Based on the high-speed development of the fiber laser in recent years, the development of researching 915 nm semiconductor laser as main pumping sources of the fiber laser is at a high speed. Because the beam quality of the laser diode is very poor, the 915 nm laser diode is generally based on optical fiber coupling module to output the laser. Using the beam-shaping and fiber-coupling technology to improve the quality of output beam light, we present a kind of high-power and high-brightness semiconductor laser module, which can output 13.22 W through the optical fiber. Based on 915 nm GaAs semiconductor laser diode which has output power of 13.91 W, we describe a thoroughly detailed procedure for reshaping the beam output from the semiconductor laser diode and coupling the beam into the optical fiber of which the core diameter is 105 μm and the numerical aperture is 0.18. We get 13.22 W from the output fiber of the module at 14.5 A, the coupling efficiency of the whole module is 95.03% and the brightness is 1.5 MW/cm2 -str. The output power of the single chip semiconductor laser module achieves the advanced level in the domestic use.

Bidirectional chaos communication between two outer semiconductor lasers coupled mutually with a central semiconductor laser.

PubMed

Li, Ping; Wu, Jia-Gui; Wu, Zheng-Mao; Lin, Xiao-Dong; Deng, Dao; Liu, Yu-Ran; Xia, Guang-Qiong

2011-11-21

Based on a linear chain composed of a central semiconductor laser and two outer semiconductor lasers, chaos synchronization and bidirectional communication between two outer lasers have been investigated under the case that the central laser and the two outer lasers are coupled mutually, whereas there exists no coupling between the two outer lasers. The simulation results show that high-quality and stable isochronal synchronization between the two outer lasers can be achieved, while the cross-correlation coefficients between the two outer lasers and the central laser are very low under proper operation condition. Based on the high performance chaos synchronization between the two outer lasers, message bidirectional transmissions of bit rates up to 20 Gbit/s can be realized through adopting a novel decoding scheme which is different from that based on chaos pass filtering effect. Furthermore, the security of bidirectional communication is also analyzed. © 2011 Optical Society of America

On the Acceleration and Anisotropy of Ions Within Magnetotail Dipolarizing Flux Bundles

NASA Astrophysics Data System (ADS)

Zhou, Xu-Zhi; Runov, Andrei; Angelopoulos, Vassilis; Artemyev, Anton V.; Birn, Joachim

2018-01-01

Dipolarizing flux bundles (DFBs), earthward propagating structures with enhanced northward magnetic field Bz, are usually believed to carry a distinctly different plasma population from that in the ambient magnetotail plasma sheet. The ion distribution functions within the DFB, however, have been recently found to be largely controlled by the ion adiabaticity parameter κ in the ambient plasma sheet outside the DFB. According to these observations, the ambient κ values of 2-3 usually correspond to a strong perpendicular anisotropy of suprathermal ions within the DFB, whereas for lower κ values the DFB ions become more isotropic. Here we utilize a simple, test particle model to explore the nature of the anisotropy and its dependence on the ambient κ values. We find that the anisotropy originates from successive ion reflections and reentries to the DFB, during which the ions are consecutively accelerated in the perpendicular direction by the DFB-associated electric field. This consecutive acceleration may be interrupted, however, when magnetic field lines are highly curved in the ambient plasma sheet. In this case, the ion trajectories become stochastic outside the DFB, which makes the reflected ions less likely to return to the DFB for another cycle of acceleration; as a consequence, the perpendicular ion anisotropy does not appear. Given that the DFB ions are a free energy source for instabilities when they are injected toward Earth, our simple model (that reproduces most observational features on the anisotropic DFB ion distributions) may shed new lights on the coupling process between magnetotail and inner magnetosphere.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jatana, Gurneesh; Geckler, Sam; Koeberlein, David

We designed and developed a 4-probe multiplexed multi-species absorption spectroscopy sensor system for gas property measurements on the intake side of commercial multi-cylinder internal-combustion (I.C.) engines; the resulting cycle- and cylinder-resolved concentration, temperature and pressure measurements are applicable for assessing spatial and temporal variations in the recirculated exhaust gas (EGR) distribution at various locations along the intake gas path, which in turn is relevant to assessing cylinder charge uniformity, control strategies, and CFD models. Furthermore, the diagnostic is based on absorption spectroscopy and includes an H 2O absorption system (utilizing a 1.39 m distributed feedback (DFB) diode laser) for measuringmore » gas temperature, pressure, and H 2O concentration, and a CO 2 absorption system (utilizing a 2.7 m DFB laser) for measuring CO 2 concentration. The various lasers, optical components and detectors were housed in an instrument box, and the 1.39- m and 2.7- m lasers were guided to and from the engine-mounted probes via optical fibers and hollow waveguides, respectively. The 5kHz measurement bandwidth allows for near-crank angle resolved measurements, with a resolution of 1.2 crank angle degrees at 1000 RPM. Our use of compact stainless steel measurement probes enables simultaneous multi-point measurements at various locations on the engine with minimal changes to the base engine hardware; in addition to resolving large-scale spatial variations via simultaneous multi-probe measurements, local spatial gradients can be resolved by translating individual probes. Along with details of various sensor design features and performance, we also demonstrate validation of the spectral parameters of the associated CO 2 absorption transitions using both a multi-pass heated cell and the sensor probes.« less

Reduction of B-integral accumulation in lasers

DOEpatents

Meyerhofer, David D.; Konoplev, Oleg A.

2000-01-01

A pulsed laser is provided wherein the B-integral accumulated in the laser pulse is reduced using a semiconductor wafer. A laser pulse is generated by a laser pulse source. The laser pulse passes through a semiconductor wafer that has a negative nonlinear index of refraction. Thus, the laser pulse accumulates a negative B-integral. The laser pulse is then fed into a laser amplification medium, which has a positive nonlinear index of refraction. The laser pulse may make a plurality of passes through the laser amplification medium and accumulate a positive B-integral during a positive non-linear phase change. The semiconductor and laser pulse wavelength are chosen such that the negative B-integral accumulated in the semiconductor wafer substantially cancels the positive B-integral accumulated in the laser amplification medium. There may be additional accumulation of positive B-integral if the laser pulse passes through additional optical mediums such as a lens or glass plates. Thus, the effects of self-phase modulation in the laser pulse are substantially reduced.

Key techniques for space-based solar pumped semiconductor lasers

NASA Astrophysics Data System (ADS)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Compact, highly efficient, single-frequency 25W, 2051nm Tm fiber-based MOPA for CO2 trace-gas laser space transmitter

NASA Astrophysics Data System (ADS)

Engin, Doruk; Chuang, Ti; Litvinovitch, Slava; Storm, Mark

2017-08-01

Fibertek has developed and demonstrated an ideal high-power; low-risk; low-size, weight, and power (SWaP) 2051 nm laser design meeting the lidar requirements for satellite-based global measurement of carbon dioxide (CO2). The laser design provides a path to space for either a coherent lidar approach being developed by NASA Jet Propulsion Laboratory (JPL)1,2 or an Integrated Path Differential Lidar (IPDA) approach developed by Harris Corp using radio frequency (RF) modulation and being flown as part of a NASA Earth Venture Suborbital Mission—NASA's Atmospheric Carbon and Transport - America.3,4 The thulium (Tm) fiber laser amplifies a <500 kHz linewidth distributed feedback (DFB) laser up to 25 W average power in a polarization maintaining (PM) fiber. The design manages and suppresses all deleterious non-linear effects that can cause linewidth broadening or amplified spontaneous emission (ASE) and meets all lidar requirements. We believe the core laser components, architecture, and design margins can support a coherent or IPDA lidar 10-year space mission. With follow-on funding Fibertek can adapt an existing space-based Technology Readiness Level 6 (TRL-6), 20 W erbium fiber laser package for this Tm design and enable a near-term space mission with an electrical-to-optical (e-o) efficiency of <20%. A cladding-pumped PM Tm fiber-based amplifier optimized for high efficiency and high-power operation at 2051 nm is presented. The two-stage amplifier has been demonstrated to achieve 25 W average power and <16 dB polarization extinction ratio (PER) out of a single-mode PM fiber using a <500 kHz linewidth JPL DFB laser5-7 and 43 dB gain. The power amplifier's optical conversion efficiency is 53%. An internal efficiency of 58% is calculated after correcting for passive losses. The two-stage amplifier sustains its highly efficient operation for a temperature range of 5-40°C. The absence of stimulated Brillouin scattering (SBS) for the narrow linewidth amplification shows promise for further power scaling.

FIBER OPTICS. ACOUSTOOPTICS: Amplification of semiconductor laser radiation in the wavelength range 1.24-1.3 μm by stimulated Raman scattering in an optical fiber

NASA Astrophysics Data System (ADS)

Belotitskiĭ, V. I.; Kuzin, E. A.; Ovsyannikov, D. V.; Petrov, Mikhail P.

1990-07-01

An investigation was made of the influence of weak semiconductor laser radiation on the spectrum of stimulated Raman scattering in a single-mode optical waveguide pumped by a YAG:Nd3+ laser emitting at 1.06 μm. The scattered radiation power increased by a factor exceeding 10 at the semiconductor laser wavelength. A small-signal dynamic gain reached 47 dB. Simultaneous amplification was observed of several modes of multimode semiconductor laser radiation with an intermode spectral interval of 1.3 nm.

Scanned-wavelength diode laser sensors for harsh environments

NASA Astrophysics Data System (ADS)

Jeffries, Jay B.; Sanders, Scott T.; Zhou, Xin; Ma, Lin; Mattison, Daniel W.; Hanson, Ronald K.

2002-09-01

Diode laser absorption offers the possibility of high-speed, robust, and rugged sensors for a wide variety of practical applications. Pressure broadening complicates absorption measurements of gas temperature and species concentrations in high-pressure, high-temperature practical environments. More agile wavelength scanning can enable measurements of temperature and species concentrations in flames and engines as demonstrated by example measurements using wavelength scanning of a single DFB in laboratory flames or a vertical cavity surface emitting laser (VCSEL) in a pulse detonation engine environment. Although the blending of multiple transitions by pressure broadening complicates the atmospheric pressure spectrum of C2H4 fuel, a scanned wavelength strategy enables quantitative measurement of fuel/oxidizer stoichiometry. Wavelength-agile scanning techniques enable high-speed measurements in these harsh environments.

Apparatus For Linewidth Reduction in Distributed Feedback or Distributed Bragg Reflector Semiconductor Lasers Using Vertical Emission

NASA Technical Reports Server (NTRS)

Cook, Anthony L. (Inventor); Hendricks, Herbert D. (Inventor)

2000-01-01

The linewidth of a distributed feedback semiconductor laser or a distributed Bragg reflector laser having one or more second order gratings is reduced by using an external cavity to couple the vertical emission back into the laser. This method and device prevent disturbance of the main laser beam, provide unobstructed access to laser emission for the formation of the external cavity, and do not require a very narrow heat sink. Any distributed Bragg reflector semiconductor laser or distributed feedback semiconductor laser that can produce a vertical emission through the epitaxial material and through a window in the top metallization can be used. The external cavity can be formed with an optical fiber or with a lens and a mirror or grating.

Method and Apparatus for Linewidth Reduction in Distributed Feedback or Distributed Bragg Reflector Semiconductor Lasers using Vertical Emission

NASA Technical Reports Server (NTRS)

Cook, Anthony L. (Inventor); Hendricks, Herbert D. (Inventor)

1998-01-01

The linewidth of a distributed feedback semiconductor laser or a distributed Bragg reflector laser having one or more second order gratings is reduced by using an external cavity to couple the vertical emission back into the laser. This method and device prevent disturbance of the main laser beam. provide unobstructed access to laser emission for the formation of the external cavity. and do not require a very narrow heat sink. Any distributed Bragg reflector semiconductor laser or distributed feedback semiconductor laser that can produce a vertical emission through the epitaxial material and through a window in the top metallization can be used. The external cavity can be formed with an optical fiber or with a lens and a mirror of grating.

Semiconductor optoelectronic devices for free-space optical communications

NASA Technical Reports Server (NTRS)

Katz, J.

1983-01-01

The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

All-Fiber Configuration Laser Self-Mixing Doppler Velocimeter Based on Distributed Feedback Fiber Laser

PubMed Central

Wu, Shuang; Wang, Dehui; Xiang, Rong; Zhou, Junfeng; Ma, Yangcheng; Gui, Huaqiao; Liu, Jianguo; Wang, Huanqin; Lu, Liang; Yu, Benli

2016-01-01

In this paper, a novel velocimeter based on laser self-mixing Doppler technology has been developed for speed measurement. The laser employed in our experiment is a distributed feedback (DFB) fiber laser, which is an all-fiber structure using only one Fiber Bragg Grating to realize optical feedback and wavelength selection. Self-mixing interference for optical velocity sensing is experimentally investigated in this novel system, and the experimental results show that the Doppler frequency is linearly proportional to the velocity of a moving target, which agrees with the theoretical analysis commendably. In our experimental system, the velocity measurement can be achieved in the range of 3.58 mm/s–2216 mm/s with a relative error under one percent, demonstrating that our novel all-fiber configuration velocimeter can implement wide-range velocity measurements with high accuracy. PMID:27472342

Tunable Oscillations in Optically Injected Semiconductor Lasers With Reduced Sensitivity to Perturbations - Postprint

DTIC Science & Technology

2014-09-01

Squeezed light from injection- locked quantum well lasers ,” Phys. Rev. Lett., vol. 71, pp. 3951–3954, 1993. [30] A. E. Siegman , Lasers , 1st ed...AFRL-RY-WP-TP-2014-0297 TUNABLE OSCILLATIONS IN OPTICALLY INJECTED SEMICONDUCTOR LASERS WITH REDUCED SENSITIVITY TO PERTURBATIONS -POSTPRINT...OSCILLATIONS IN OPTICALLY INJECTED SEMICONDUCTOR LASERS WITH REDUCED SENSITIVITY TO PERTURBATIONS - POSTPRINT 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER

Influence of temperature on the spectral characteristics of semiconductor lasers in the visible range

NASA Astrophysics Data System (ADS)

Adamov, A. A.; Baranov, M. S.; Khramov, V. N.

2018-04-01

The results of studies on the effect of temperature on the output spectral characteristics of continuous semiconductor lasers of the visible range are presented. The paper presents the results of studying the spectral-optical radiation parameters of semiconductor lasers, their coherence lengths, and the dependence of the position of the spectral peak of the wavelength on temperature. This is necessary for the selection of the most optimal laser in order to use it for medical ophthalmologic diagnosis. The experiment was carried out using semiconductor laser modules based on a laser diode. The spectra were recorded by using a two-channel automated spectral complex based on the MDR-23 monochromator. Spectral dependences on the temperature of semiconductor lasers are obtained, in the range from 300 to 370 K. The possibility of determining the internal damage to the stabilization of laser modules without opening the case is shown, but only with the use of their spectral characteristics. The obtained data allow taking into account temperature characteristics and further optimization of parameters of such lasers when used in medical practice, in particular, in ophthalmologic diagnostics.

Protective effect of Mn(III)-desferrioxamine B upon oxidative stress caused by ozone and acid rain in the Brazilian soybean cultivar Glycine max "Sambaiba".

PubMed

Esposito, Jéssica Bordotti Nobre; Esposito, Breno Pannia; Azevedo, Ricardo Antunes; Cruz, Luciano Soares; da Silva, Luzimar Campos; de Souza, Silvia Ribeiro

2015-04-01

This study aimed to investigate the effects of the Mn complex (Mn(III)-desferrioxamine B (MnDFB)) on oxidative stress in the Brazilian soybean cultivar Glycine max "Sambaiba" following exposure to ozone and acid rain. We determined the suitable dose of MnDFB to apply to G. max seedlings using a dose-response curve. The highest superoxide dismutase (SOD) activity and Mn content in leaves were found upon the application of 8 μM MnDFB. Thus, G. max seedlings pretreated with 8 μM MnDFB were individually exposed to ozone and acid rain simulated. Pretreatment with MnDFB reduced lipid peroxidation upon ozone exposure and increased SOD activity in leaves; it did not alter the metal content in any part of the plant. Conversely, following acid rain exposure, neither the metal content in leaves nor SOD enzyme activity were directly affected by MnDFB, unlike pH. Our findings demonstrated that exogenous MnDFB application before ozone exposure may modulate the MnSOD, Cu/ZnSOD, and FeSOD activities to combat the ROS excess in the cell. Here, we demonstrated that the applied dose of MnDFB enhances antioxidative defenses in soybean following exposure to acid rain and especially to ozone.

A Compact Tunable Diode Laser Absorption Spectrometer to Monitor CO2 at 2.7 μm Wavelength in Hypersonic Flows

PubMed Central

Vallon, Raphäel; Soutadé, Jacques; Vérant, Jean-Luc; Meyers, Jason; Paris, Sébastien; Mohamed, Ajmal

2010-01-01

Since the beginning of the Mars planet exploration, the characterization of carbon dioxide hypersonic flows to simulate a spaceship’s Mars atmosphere entry conditions has been an important issue. We have developed a Tunable Diode Laser Absorption Spectrometer with a new room-temperature operating antimony-based distributed feedback laser (DFB) diode laser to characterize the velocity, the temperature and the density of such flows. This instrument has been tested during two measurement campaigns in a free piston tunnel cold hypersonic facility and in a high enthalpy arc jet wind tunnel. These tests also demonstrate the feasibility of mid-infrared fiber optics coupling of the spectrometer to a wind tunnel for integrated or local flow characterization with an optical probe placed in the flow. PMID:22219703

Fundamental Limit of 1/f Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

NASA Technical Reports Server (NTRS)

Numata, K.; Camp, J.

2011-01-01

So-called 1/f noise has power spectral density inversely proportional to frequency, and is observed in many physical processes. Single longitudinal-mode semiconductor lasers, used in variety of interferometric sensing applications, as well as coherent communications, exhibit 1/f frequency noise at low frequency (typically below 100kHz). Here we evaluate mechanical thermal noise due to mechanical dissipation in semiconductor laser components and give a plausible explanation for the widely-observed 1/f frequency noise, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Semiconductor-laser's short cavity, small beam radius, and lossy components are expected to emphasize thermal-noise-limited frequency noise. Our simple model largely explains the different 1/f noise levels observed in various semiconductor lasers, and provides a framework where the noise may be reduced with proper design.

Terahertz light-emitting graphene-channel transistor toward single-mode lasing

NASA Astrophysics Data System (ADS)

Yadav, Deepika; Tamamushi, Gen; Watanabe, Takayuki; Mitsushio, Junki; Tobah, Youssef; Sugawara, Kenta; Dubinov, Alexander A.; Satou, Akira; Ryzhii, Maxim; Ryzhii, Victor; Otsuji, Taiichi

2018-03-01

A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1-7.6-THz range with a maximum radiation power of 10 μW as well as a single-mode emission at 5.2 THz with a radiation power of 0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature.

A CO trace gas detection system based on continuous wave DFB-QCL

NASA Astrophysics Data System (ADS)

Dang, Jingmin; Yu, Haiye; Sun, Yujing; Wang, Yiding

2017-05-01

A compact and mobile system was demonstrated for the detection of carbon monoxide (CO) at trace level. This system adopted a high-power, continuous wave (CW), distributed feedback quantum cascade laser (DFB-QCL) operating at ∼22 °C as excitation source. Wavelength modulation spectroscopy (WMS) as well as second harmonic detection was used to isolate complex, overlapping spectral absorption features typical of ambient pressures and to achieve excellent specificity and high detection sensitivity. For the selected P(11) absorption line of CO molecule, located at 2099.083 cm-1, a limit of detection (LoD) of 26 ppb by volume (ppbv) at atmospheric pressure was achieved with a 1 s acquisition time. Allan deviation analysis was performed to investigate the long term performance of the CO detection system, and a measurement precision of 3.4 ppbv was observed with an optimal integration time of approximate 114 s, which verified the reliable and robust operation of the developed system.

Methods for determining optical power, for power-normalizing laser measurements, and for stabilizing power of lasers via compliance voltage sensing

DOEpatents

Taubman, Matthew S; Phillips, Mark C

2015-04-07

A method is disclosed for power normalization of spectroscopic signatures obtained from laser based chemical sensors that employs the compliance voltage across a quantum cascade laser device within an external cavity laser. The method obviates the need for a dedicated optical detector used specifically for power normalization purposes. A method is also disclosed that employs the compliance voltage developed across the laser device within an external cavity semiconductor laser to power-stabilize the laser mode of the semiconductor laser by adjusting drive current to the laser such that the output optical power from the external cavity semiconductor laser remains constant.

Lasers, their development, and applications at M.I.T. Lincoln Laboratory

NASA Technical Reports Server (NTRS)

Rediker, R. H.; Melngailis, I.; Mooradian, A.

1984-01-01

A historical account of the work on lasers at MIT Lincoln Laboratory is presented. Highlighted are the efforts that led to the coinvention of the semiconductor laser and the Laboratory's later role in establishing the feasibility of GaInAsP/InP semiconductor lasers for use in fiber telecommunications at 1.3-1.5 micron wavelengths. Descriptions of other important developments include tunable lead-salt semiconductor and solid-state lasers for spectroscopy and LIDAR applications, respectively, as well as ultrastable CO2 lasers for coherent infrared radar.

Modulation Effects in Multi-Section Semiconductor Lasers (Postprint)

DTIC Science & Technology

2013-01-01

resonant modulation of semiconductor lasers beyond relaxation oscillation frequency,” Appl. Phys. Lett., 63, 1459–1461 (1993). [26] J. Helms and K. Petermann ...5, 4–6 (1993). [28] K. Petermann , “External optical feedback phenomena in semiconductor lasers,” IEEE J. Sel. Top. Quantum Elec- tron., 1, 480–489

Gold-reflector-based semiconductor saturable absorber mirror for femtosecond mode-locked Cr4+:YAG lasers

NASA Astrophysics Data System (ADS)

Zhang, Z.; Nakagawa, T.; Torizuka, K.; Sugaya, T.; Kobayashi, K.

We developed a gold reflector based semiconductor saturable absorber mirror that has a sufficiently high reflectivity and a broad bandwidth and has been used to initiate the mode locking in a Cr4+:YAG laser. The laser achieved a similar efficiency to the lasers with Bragg-reflector-based semiconductor saturable absorber mirrors, but delivered a much broader spectrum and a shorter pulse.

Autologous implantation of BMP2-expressing dermal fibroblasts to improve bone mineral density and architecture in rabbit long bones.

PubMed

Ishihara, Akikazu; Weisbrode, Steve E; Bertone, Alicia L

2015-10-01

Cell-mediated gene therapy may treat bone fragility disorders. Dermal fibroblasts (DFb) may be an alternative cell source to stem cells for orthopedic gene therapy because of their rapid cell yield and excellent plasticity with bone morphogenetic protein-2 (BMP2) gene transduction. Autologous DFb or BMP2-expressing autologous DFb were administered in twelve rabbits by two delivery routes; a transcortical intra-medullar infusion into tibiae and delayed intra-osseous injection into femoral drill defects. Both delivery methods of DFb-BMP2 resulted in a successful cell engraftment, increased bone volume, bone mineral density, improved trabecular bone microarchitecture, greater bone defect filling, external callus formation, and trabecular surface area, compared to non-transduced DFb or no cells. Cell engraftment within trabecular bone and bone marrow tissue was most efficiently achieved by intra-osseous injection of DFb-BMP2. Our results suggested that BMP2-expressing autologous DFb have enhanced efficiency of engraftment in target bones resulting in a measurable biologic response by the bone of improved bone mineral density and bone microarchitecture. These results support that autologous implantation of DFb-BMP2 warrants further study on animal models of bone fragility disorders, such as osteogenesis imperfecta and osteoporosis to potentially enhance bone quality, particularly along with other gene modification of these diseases. © 2015 Orthopaedic Research Society. Published by Wiley Periodicals, Inc.

Semiconductor Laser Low Frequency Noise Characterization

NASA Technical Reports Server (NTRS)

Maleki, Lute; Logan, Ronald T.

1996-01-01

This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

Time-resolved spectral characterization of ring cavity surface emitting and ridge-type distributed feedback quantum cascade lasers by step-scan FT-IR spectroscopy.

PubMed

Brandstetter, Markus; Genner, Andreas; Schwarzer, Clemens; Mujagic, Elvis; Strasser, Gottfried; Lendl, Bernhard

2014-02-10

We present the time-resolved comparison of pulsed 2nd order ring cavity surface emitting (RCSE) quantum cascade lasers (QCLs) and pulsed 1st order ridge-type distributed feedback (DFB) QCLs using a step-scan Fourier transform infrared (FT-IR) spectrometer. Laser devices were part of QCL arrays and fabricated from the same laser material. Required grating periods were adjusted to account for the grating order. The step-scan technique provided a spectral resolution of 0.1 cm(-1) and a time resolution of 2 ns. As a result, it was possible to gain information about the tuning behavior and potential mode-hops of the investigated lasers. Different cavity-lengths were compared, including 0.9 mm and 3.2 mm long ridge-type and 0.97 mm (circumference) ring-type cavities. RCSE QCLs were found to have improved emission properties in terms of line-stability, tuning rate and maximum emission time compared to ridge-type lasers.

Monolithically integrated distributed feedback laser array wavelength-selectable light sources for WDM-PON application

NASA Astrophysics Data System (ADS)

Chen, Xin; Zhao, Jianyi; Zhou, Ning; Huang, Xiaodong; Cao, Mingde; Wang, Lei; Liu, Wen

2015-01-01

The monolithic integration of 1.5-μm four channels phase shift distributed feedback lasers array (DFB-LD array) with 4×1 multi-mode interference (MMI) optical combiner is demonstrated. A home developed process mainly consists of butt-joint regrowth (BJR) and simultaneous thermal and ultraviolet nanoimprint lithography (STU-NIL) is implemented to fabricate gratings and integrated devices. The threshold currents of the lasers are less than 10 mA and the side mode suppression ratios (SMSR) are better than 40 dB for all channels. Quasi-continuous tuning is realized over 7.5 nm wavelength region with the 30 °C temperature variation. The results indicate that the integration device we proposed can be used in wavelength division multiplexing passive optical networks (WDM-PON).

A 4 U Laser Heterodyne Radiometer for Methane (CH4) and Carbon Dioxide (CO2) Measurements from an Occultation-Viewing CubSat

NASA Technical Reports Server (NTRS)

Wilson, Emily L.; DiGregorio, A. J.; Riot, Vincent J.; Ammons, Mark S.; Bruner, WIlliam W.; Carter, Darrell; Mao, Jianping; Ramanathan, Anand; Strahan, Susan E.; Oman, Luke D.;

Intensity-Stabilized Fast-Scanned Direct Absorption Spectroscopy Instrumentation Based on a Distributed Feedback Laser with Detection Sensitivity down to 4 × 10−6

PubMed Central

Zhao, Gang; Tan, Wei; Jia, Mengyuan; Hou, Jiajuan; Ma, Weiguang; Dong, Lei; Zhang, Lei; Feng, Xiaoxia; Wu, Xuechun; Yin, Wangbao; Xiao, Liantuan; Axner, Ove; Jia, Suotang

2016-01-01

A novel, intensity-stabilized, fast-scanned, direct absorption spectroscopy (IS-FS-DAS) instrumentation, based on a distributed feedback (DFB) diode laser, is developed. A fiber-coupled polarization rotator and a fiber-coupled polarizer are used to stabilize the intensity of the laser, which significantly reduces its relative intensity noise (RIN). The influence of white noise is reduced by fast scanning over the spectral feature (at 1 kHz), followed by averaging. By combining these two noise-reducing techniques, it is demonstrated that direct absorption spectroscopy (DAS) can be swiftly performed down to a limit of detection (LOD) (1σ) of 4 × 10−6, which opens up a number of new applications. PMID:27657082

EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

NASA Astrophysics Data System (ADS)

Calvez, S.; Adams, M. J.

2012-09-01

Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early achievements in the June 1987 Special Issue of IEEE Journal of Quantum Electronics. The Millennium Issue of IEEE Journal of Selected Topics in Quantum Electronics presented a further set of articles on historical aspects of the subject as well as a 'snapshot' of current research in June 2000. It is not the intention here to duplicate any of this historical material that is already available, but rather to complement it with personal recollections from researchers who were involved in laser development in the USA, France, Russia and the UK. Hence, in addition to fascinating accounts of the discovery of the theoretical condition for stimulated emission from semiconductors and of the pioneering work at IBM, there are two complementary views of the laser research at the Lebedev Institute, and personal insights into the developments at STL and at Bell Laboratories. These are followed by an account of the scientific and technological connections between the early pioneering breakthroughs and the commercialisation of semiconductor laser products. Turning to the papers from today's researchers, there is coverage of many of the current 'hot' topics including quantum cascade lasers, mid-infrared lasers, high-power lasers, the exciting developments in understanding and exploiting the nonlinear dynamics of lasers, and photonic integrated circuits with extremely high communication data capacity, as well as reports of recent progress on laser materials such as dilute nitrides and bismides, photonic crystals, quantum dots and organic semiconductors. Thanks are due to Jarlath McKenna for sterling support from IOP Publishing and to Peter Blood for instigating this Special Issue and inviting us to serve as Guest Editors.

Long microwave delay fiber-optic link for radar testing

NASA Astrophysics Data System (ADS)

Newberg, I. L.; Gee, C. M.; Thurmond, G. D.; Yen, H. W.

1990-05-01

A long fiberoptic delay line is used as a radar repeater to improve radar testing capabilities. The first known generation of 152 microsec delayed ideal target at X-band (10 GHz) frequencies having the phase stability and signal-to-noise ratio (SNR) needed for testing modern high-resolution Doppler radars is demonstrated with a 31.6-km experimental externally modulated fiberoptic link with a distributed-feedback (DFB) laser. The test application, link configuration, and link testing are discussed.

Process-Based Cost Modeling of Photonics Manufacture: The Cost Competitiveness of Monolithic Integration of a 1550-nm DFB Laser and an Electroabsorptive Modulator on an InP Platform

NASA Astrophysics Data System (ADS)

Fuchs, Erica R. H.; Bruce, E. J.; Ram, R. J.; Kirchain, Randolph E.

2006-08-01

The monolithic integration of components holds promise to increase network functionality and reduce packaging expense. Integration also drives down yield due to manufacturing complexity and the compounding of failures across devices. Consensus is lacking on the economically preferred extent of integration. Previous studies on the cost feasibility of integration have used high-level estimation methods. This study instead focuses on accurate-to-industry detail, basing a process-based cost model of device manufacture on data collected from 20 firms across the optoelectronics supply chain. The model presented allows for the definition of process organization, including testing, as well as processing conditions, operational characteristics, and level of automation at each step. This study focuses on the cost implications of integration of a 1550-nm DFB laser with an electroabsorptive modulator on an InP platform. Results show the monolithically integrated design to be more cost competitive over discrete component options regardless of production scale. Dominant cost drivers are packaging, testing, and assembly. Leveraging the technical detail underlying model projections, component alignment, bonding, and metal-organic chemical vapor deposition (MOCVD) are identified as processes where technical improvements are most critical to lowering costs. Such results should encourage exploration of the cost advantages of further integration and focus cost-driven technology development.

Near Infrared Cavity Ring-Down Spectroscopy for Isotopic Analyses of CH4 on Future Martian Surface Missions

NASA Technical Reports Server (NTRS)

Chen, Y.; Mahaffy P.; Holmes, V.; Burris, J.; Morey, P.; Lehmann, K.K.; Lollar, B. Sherwood; Lacrampe-Couloume, G.; Onstott, T.C.

2014-01-01

A compact Near Infrared Continuous Wave Cavity Ring-Down Spectrometer (near-IR-cw-CRDS) was developed as a candidate for future planetary surface missions. The optical cavity was made of titanium with rugged quartz windows to protect the delicate super cavity from the harsh environmental changes that it would experience during space flight and a Martian surface mission. This design assured the long-term stability of the system. The system applied three distributed feedback laser diodes (DFB-LD), two of which were tuned to the absorption line peaks of (sup 12)CH4 and (sup 13)CH4 at 6046.954 inverse centimeters and 6049.121 inverse centimeters, respectively. The third laser was tuned to a spectral-lines-free region for measuring the baseline cavity loss. The multiple laser design compensated for typical baseline drift of a CRDS system and, thus, improved the overall precision. A semiconductor optical amplifier (SOA) was used instead of an Acousto-Optic Module (AOM) to initiate the cavity ring-down events. It maintained high acquisition rates such as AOM, but consumed less power. High data acquisition rates combined with improved long-term stability yielded precise isotopic measurements in this near-IR region even though the strongest CH4 absorption line in this region is 140 times weaker than that of the strongest mid-IR absorption band. The current system has a detection limit of 1.4 times 10( sup –12) inverse centimeters for (sup 13)CH4. This limit corresponds to approximately 7 parts per trillion volume of CH4 at 100 Torrs. With no further improvements the detection limit of our current near IR-cw-CRDS at an ambient Martian pressure of approximately 6 Torrs (8 millibars) would be 0.25 parts per billion volume for one 3.3 minute long analysis.

Semiconductor Laser Multi-Spectral Sensing and Imaging

PubMed Central

Le, Han Q.; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers. PMID:22315555

Semiconductor laser multi-spectral sensing and imaging.

PubMed

Le, Han Q; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

NASA Astrophysics Data System (ADS)

Pierścińska, D.

2018-01-01

This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

Ultimate linewidth reduction of a semiconductor laser frequency-stabilized to a Fabry-Pérot interferometer.

PubMed

Bahoura, Messaoud; Clairon, André

2003-11-01

We report a theoretical dynamical analysis on effect of semiconductor laser phase noise on the achievable linewidth when locked to a Fabry-Pérot cavity fringe using a modulation-demodulation frequency stabilization technique such as the commonly used Pound-Drever-Hall frequency locking scheme. We show that, in the optical domain, the modulation-demodulation operation produces, in the presence of semiconductor laser phase noise, two kinds of excess noise, which could be much above the shot noise limit, namely, conversion noise (PM-to-AM) and intermodulation noise. We show that, in typical stabilization conditions, the ultimate semiconductor laser linewidth reduction can be severely limited by the intermodulation excess noise. The modulation-demodulation operation produces the undesirable nonlinear intermodulation effect through which the phase noise spectral components of the semiconductor laser, in the vicinity of even multiples of the modulation frequency, are downconverted into the bandpass of the frequency control loop. This adds a spurious signal, at the modulation frequency, to the error signal and limits the performance of the locked semiconductor laser. This effect, reported initially in the microwave domain using the quasistatic approximation, can be considerably reduced by a convenient choice of the modulation frequency.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Simple pulsed semiconductor lasers

NASA Astrophysics Data System (ADS)

Hulicius, E.; Abrahám, A.; Sĭmeček, T.

1988-11-01

A brief review is given of the main characteristics of pulsed GaAlAs/GaAs lasers made in Czechoslovakia. A description is given of laser structures with large optical cavities and their electrical, optical, and service life characteristics are reported.

Semiconductor lasers for versatile applications from global communications to on-chip interconnects

NASA Astrophysics Data System (ADS)

Arai, Shigehisa

2015-01-01

Since semiconductor lasers were realized in 1962, various efforts have been made to enrich human life thorough novel equipments and services. Among them optical fiber communications in global communications have brought out marvelous information technology age represented by the internet. In this paper, emerging topics made on GaInAsP/InP based long-wavelength lasers toward ultra-low power consumption semiconductor lasers for optical interconnects in supercomputers as well as in future LSIs are presented.

Gain Coupling of Class A Semiconductor Lasers (Postprint)

DTIC Science & Technology

2010-09-01

Circuits (Wiley, 1995). 15. SimuLase Version 1.4.0.0 by Nonlinear Control Strategies, Inc. (2009). 16. A. Siegman , Lasers (University Science, 1986). 3062 OPTICS LETTERS / Vol. 35, No. 18 / September 15, 2010 3 ...AFRL-RY-WP-TP-2010-1250 GAIN COUPLING OF CLASS A SEMICONDUCTOR LASERS (POSTPRINT) Chris Hessenius, Mahmoud Fallahi, and Jerome Moloney...June 2010 4. TITLE AND SUBTITLE GAIN COUPLING OF CLASS A SEMICONDUCTOR LASERS (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c

High Power and Frequency-Agile Optical Parametric Oscillators for Airborne DIAL Measurements of CH4 and H2O

NASA Astrophysics Data System (ADS)

Nehrir, A. R.; Shuman, T.; Chuang, T.; Hair, J. W.; Refaat, T. F.; Ismail, S.; Kooi, S. A.; Notari, A.

2014-12-01

Atmospheric methane (CH4) has the second largest radiative forcing of the long-lived greenhouse gasses (GHG) after carbon dioxide. However, methane's much shorter atmospheric lifetime and much stronger warming potential make its radiative forcing equivalent to that for CO2 over a 20-year time horizon which makes CH4 a particularly attractive target for mitigation strategies. Similar to CH4, water vapor (H2O) is the most dominant of the short-lived GHG in the atmosphere and plays a key role in many atmospheric processes. Atmospheric H2O concentrations span over four orders of magnitude from the planetary boundary layer where high impact weather initiates to lower levels in the upper troposphere and lower stratosphere (UTLS) where water vapor has significant and long term impacts on the Earth's radiation budget. NASA Langley has fostered the technology development with Fibertek, Inc. to develop frequency agile and high power (> 3 W) pulsed lasers using similar architectures in the 1645 nm and 935 nm spectral bands for DIAL measurements of CH4 and H2O, respectively. Both systems utilize high power 1 kHz pulse repetition frequency Nd:YAG lasers to generate high power laser emission at the desired wavelength via optical parametric oscillators (OPO). The CH4 OPO, currently in its final build stage in a SBIR Phase II program has demonstrated >2 W average power with injection seeding from a distributed feedback (DFB) laser during risk reduction experiments. The H2O OPO has demonstrated high power operation (>2 W) during the SBIR Phase I program while being injection seeded with a DFB laser, and is currently funded via an SBIR Phase II to build a robust system for future integration into an airborne water vapor DIAL system capable of profiling from the boundary layer up to the UTLS. Both systems have demonstrated operation with active OPO wavelength control to allow for optimization of the DIAL measurements for operation at different altitudes and geographic regions. An update on the progress of the CH4 and H2O laser development will be presented which will focus on key laser characteristics such as pulse energy, frequency agility and spectral purity. DIAL simulations will also be presented based on the expected and measured laser characteristics and system parameters in anticipation of future system(s) development.

Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm

NASA Astrophysics Data System (ADS)

Marmalyuk, A. A.; Ryaboshtan, Yu L.; Gorlachuk, P. V.; Ladugin, M. A.; Padalitsa, A. A.; Slipchenko, S. O.; Lyutetskiy, A. V.; Veselov, D. A.; Pikhtin, N. A.

2018-03-01

The effect of the waveguide layer thickness on output characteristics of AlGaInAs/InP quantum-well semiconductor lasers is analysed. The samples of semiconductor lasers with narrow and wide waveguides are experimentally fabricated. Their comparison is carried out and the advantages of particular constructions depending on the current pump are demonstrated.

Semiconductor laser using multimode interference principle

NASA Astrophysics Data System (ADS)

Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

2018-01-01

Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

PubMed

Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

2016-02-22

With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eliseev, P G

2012-12-31

A survey is presented of works on creation and investigation of semiconductor lasers during 1957 - 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

EML Array fabricated by SAG technique monolithically integrated with a buried ridge AWG multiplexer

NASA Astrophysics Data System (ADS)

Xu, Junjie; Liang, Song; Zhang, Zhike; An, Junming; Zhu, Hongliang; Wang, Wei

2017-06-01

We report the fabrication of a ten channel electroabsorption modulated DFB laser (EML) array. Different emission wavelengths of the laser array are obtained by selective area growth (SAG) technique, which is also used for the integration of electroabsorption modulators (EAM) with the lasers. An arrayed waveguide grating (AWG) combiner is integrated monolithically with the laser array by butt-joint regrowth (BJR) technique. A buried ridge waveguide structure is adopted for the AWG combiner. A self aligned fabrication procedure is adopted for the fabrication of the waveguide structure of the device to eliminate the misalignment between the laser active waveguide and the passive waveguide. A Ti thin film heater is integrated for each laser in the array. With the help of the heaters, ten laser emissions with 1.8 nm channel spacing are obtained. The integrated EAM has a larger than 11 dB static extinction ratios and larger than 8 GHz small signal modulation bandwidths. The light power collected in the output waveguide of the AWG is larger than -13 dBm for each wavelength.

Direct solar pumping of semiconductor lasers: A feasibility study

NASA Technical Reports Server (NTRS)

Anderson, Neal G.

1991-01-01

The primary goals of the feasibility study are the following: (1) to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space directly focused sunlight; and (2) to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or battery electrically pumping a current injection laser. With external modulation, such lasers may prove to be efficient sources for intersatellite communications. We proposed to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation for operation at low pump intensities. This report outlines our progress toward these goals. Discussion of several technical details are left to the attached summary abstract.

Design and development of a probe-based multiplexed multi-species absorption spectroscopy sensor for characterizing transient gas-parameter distributions in the intake systems of I.C. engines

DOE PAGES

Jatana, Gurneesh; Geckler, Sam; Koeberlein, David; ...

2016-09-01

We designed and developed a 4-probe multiplexed multi-species absorption spectroscopy sensor system for gas property measurements on the intake side of commercial multi-cylinder internal-combustion (I.C.) engines; the resulting cycle- and cylinder-resolved concentration, temperature and pressure measurements are applicable for assessing spatial and temporal variations in the recirculated exhaust gas (EGR) distribution at various locations along the intake gas path, which in turn is relevant to assessing cylinder charge uniformity, control strategies, and CFD models. Furthermore, the diagnostic is based on absorption spectroscopy and includes an H 2O absorption system (utilizing a 1.39 m distributed feedback (DFB) diode laser) for measuringmore » gas temperature, pressure, and H 2O concentration, and a CO 2 absorption system (utilizing a 2.7 m DFB laser) for measuring CO 2 concentration. The various lasers, optical components and detectors were housed in an instrument box, and the 1.39- m and 2.7- m lasers were guided to and from the engine-mounted probes via optical fibers and hollow waveguides, respectively. The 5kHz measurement bandwidth allows for near-crank angle resolved measurements, with a resolution of 1.2 crank angle degrees at 1000 RPM. Our use of compact stainless steel measurement probes enables simultaneous multi-point measurements at various locations on the engine with minimal changes to the base engine hardware; in addition to resolving large-scale spatial variations via simultaneous multi-probe measurements, local spatial gradients can be resolved by translating individual probes. Along with details of various sensor design features and performance, we also demonstrate validation of the spectral parameters of the associated CO 2 absorption transitions using both a multi-pass heated cell and the sensor probes.« less

Mode Hopping in Semiconductor Lasers

NASA Astrophysics Data System (ADS)

Heumier, Timothy Alan

Semiconductor lasers have found widespread use in fiberoptic communications, merchandising (bar-code scanners), entertainment (videodisc and compact disc players), and in scientific inquiry (spectroscopy, laser cooling). Some uses require a minimum degree of stability of wavelength which is not met by these lasers: Under some conditions, semiconductor lasers can discontinuously switch wavelengths in a back-and-forth manner. This is called mode hopping. We show that mode hopping is directly correlated to noise in the total intensity, and that this noise is easily detected by a photodiode. We also show that there are combinations of laser case temperature and injection current which lead to mode hopping. Conversely, there are other combinations for which the laser is stable. These results are shown to have implications for controlling mode hopping.

The optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

PubMed

Qiu, Zong-Bo; Zhu, Xin-Jun; Li, Fang-Min; Liu, Xiao; Yue, Ming

2007-07-01

Lasers have been widely used in the field of biology along with the development of laser technology, but the mechanism of the bio-effect of lasers is not explicit. The objective of this paper was to test the optical effect of a laser on protecting wheat from UV-B damage. A patent instrument was employed to emit semiconductor laser (wavelength 650 nm) and incoherent red light, which was transformed from the semiconductor laser. The wavelength, power and lightfleck diameter of the incoherent red light are the same as those of the semiconductor laser. The semiconductor laser (wavelength 650 nm, power density 3.97 mW mm(-2)) and incoherent red light (wavelength 650 nm, power density 3.97 mW mm(-2)) directly irradiated the embryo of wheat seeds for 3 min respectively, and when the seedlings were 12-day-old they were irradiated by UV-B radiation (10.08 kJ m(-2)) for 12 h in the dark. Changes in the concentration of malondialdehyde (MDA), hydrogen peroxide (H(2)O(2)), glutathione (GSH), ascorbate (AsA), carotenoids (CAR), the production rate of superoxide radical (O(2)(-)), the activities of peroxidase (POD), catalase (CAT), superoxide dismutase (SOD) and the growth parameters of seedlings (plant height, leaf area and fresh weight) were measured to test the optical effect of the laser. The results showed that the incoherent red light treatment could not enhance the activities of SOD, POD and CAT and the concentration of AsA and CAR. When the plant cells were irradiated by UV-B, the incoherent red light treatment could not eliminate active oxygen and prevent lipid peroxidation in wheat. The results also clearly demonstrate that the plant DNA was damaged by UV-B radiation and semiconductor laser irradiance had the capability to protect plants from UV-B-induced DNA damage, while the incoherent red light could not. This is the first investigation reporting the optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

Frequency offset locking of AlGaAs semiconductor lasers

NASA Astrophysics Data System (ADS)

Kuboki, Katsuhiko; Ohtsu, Motoichi

1987-04-01

Frequency offset locking is proposed as a technique for tracking and sweeping of a semiconductor laser frequency to improve temporal coherence in semiconductor lasers. Experiments were carried out in which a frequency stabilized laser (of residual frequency fluctuation value of 140 Hz at the integration time between 100 ms and 100 s) was used as a master laser, using a digital phase comparator of a large dynamic range (2 pi x 10 to the 11th rad) in the feedback loop to reduce the phase fluctuations of the beat signal between the master laser and the slave laser. As a result, residual frequency fluctuations of the beat signal were as low as 11 Hz at the integration time of 100 s (i.e., the residual frequency fluctuations of the slave laser were almost equal to those of the master laser).

Conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation using optically injected semiconductor lasers.

PubMed

Hung, Yu-Han; Tseng, Chin-Hao; Hwang, Sheng-Kwang

2018-06-01

This Letter investigates an optically injected semiconductor laser for conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation. The underlying mechanism relies solely on nonlinear laser characteristics and, thus, only a typical semiconductor laser is required as the key conversion unit. This conversion can be achieved for a broadly tunable frequency range up to at least 65 GHz. After conversion, the microwave phase quality, including linewidth and phase noise, is mostly preserved, and simultaneous microwave amplification up to 23 dB is feasible.

Hybrid organic semiconductor lasers for bio-molecular sensing.

PubMed

Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

2014-01-01

Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

Biological effects of a semiconductor diode laser on human periodontal ligament fibroblasts

PubMed Central

Choi, Eun-Jeong; Yim, Ju-Young; Koo, Ki-Tae; Seol, Yang-Jo; Lee, Yong-Moo; Ku, Young; Rhyu, In-Chul; Chung, Chong-Pyoung

2010-01-01

Purpose It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs. Methods Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 J/cm2. A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05). Results At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 J/cm2 (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 J/cm2 energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 J/cm2 energy fluency than in the control. Conclusions The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs. PMID:20607054

Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

NASA Astrophysics Data System (ADS)

Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

2016-05-01

It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

The 1.083 micron tunable CW semiconductor laser

NASA Technical Reports Server (NTRS)

Wang, C. S.; Chen, Jan-Shin; Lu, Ken-Gen; Ouyang, Keng

1991-01-01

A tunable CW laser is desired to produce light equivalent to the helium spectral line at 1.08 microns. This laser will serve as an optical pumping source for He-3 and He-4 atoms used in space magnetometers. This light source can be fabricated either as a semiconductor laser diode or a pumped solid state laser. Continuous output power of greater than 10 mW is desired. Semiconductor lasers can be thermally tuned, but must be capable of locking onto the helium resonance lines. Solid state lasers must have efficient pumping sources suitable for space configuration. Additional requirements are as follows: space magnetometer applications will include low mass (less than 0.5 kg), low power consumption (less than 0.75 W), and high stability/reliability for long missions (5-10 years).

Plasmonic distributed feedback lasers at telecommunications wavelengths.

PubMed

Marell, Milan J H; Smalbrugge, Barry; Geluk, Erik Jan; van Veldhoven, Peter J; Barcones, Beatrix; Koopmans, Bert; Nötzel, Richard; Smit, Meint K; Hill, Martin T

2011-08-01

We investigate electrically pumped, distributed feedback (DFB) lasers, based on gap-plasmon mode metallic waveguides. The waveguides have nano-scale widths below the diffraction limit and incorporate vertical groove Bragg gratings. These metallic Bragg gratings provide a broad bandwidth stop band (~500 nm) with grating coupling coefficients of over 5000/cm. A strong suppression of spontaneous emission occurs in these Bragg grating cavities, over the stop band frequencies. This strong suppression manifests itself in our experimental results as a near absence of spontaneous emission and significantly reduced lasing thresholds when compared to similar length Fabry-Pérot waveguide cavities. Furthermore, the reduced threshold pumping requirements permits us to show strong line narrowing and super linear light current curves for these plasmon mode devices even at room temperature.

Sensitive detection of methane at 3.3 μm using an integrating sphere and interband cascade laser

NASA Astrophysics Data System (ADS)

Davis, N. M.; Hodgkinson, J.; Francis, D.; Tatam, R. P.

2016-04-01

Detection of methane at 3.3μm using a DFB Interband Cascade Laser and gold coated integrating sphere is performed. A 10cm diameter sphere with effective path length of 54.5cm was adapted for use as a gas cell. A comparison between this system and one using a 25cm path length single-pass gas cell is made using direct TDLS and methane concentrations between 0 and 1000 ppm. Initial investigations suggest a limit of detection of 1.0ppm for the integrating sphere and 2.2ppm for the single pass gas cell. The system has potential applications in challenging or industrial environments subject to high levels of vibration.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, Jr., Richard P.; Crawford, Mary H.

1996-01-01

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

PubMed Central

Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

2016-01-01

In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

Direct solar pumping of semiconductor lasers: A feasibility study

NASA Technical Reports Server (NTRS)

Anderson, Neal G.

1992-01-01

This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is summarized in Section 5, and information on publications resulting from this work is provided in Section 6.

TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing

NASA Astrophysics Data System (ADS)

Shan, Fei; Kim, Sung-Jin

2018-02-01

We report on thin-film transistors (TFTs) based on titanium oxide (TiOx) prepared using femtosecond laser pre-annealing for electrical application of n-type channel oxide transparent TFTs. Amorphous TFTs using TiOx semiconductors as an active layer have a low-temperature process and show remarkable electrical performance. And the femtosecond laser pre-annealing process has greater flexibility and development space for semiconductor production activity, with a fast preparation method. TFTs with a TiOx semiconductor pre-annealed via femtosecond laser at 3 W have a pinhole-free and smooth surface without crystal grains.

Theoretical analysis of a method for extracting the phase of a phase-amplitude modulated signal generated by a direct-modulated optical injection-locked semiconductor laser

NASA Astrophysics Data System (ADS)

Lee, Hwan; Cho, Jun-Hyung; Sung, Hyuk-Kee

2017-05-01

The phase modulation (PM) and amplitude modulation (AM) of optical signals can be achieved using a direct-modulated (DM) optical injection-locked (OIL) semiconductor laser. We propose and theoretically analyze a simple method to extract the phase component of a PM signal produced by a DM-OIL semiconductor laser. The pure AM component of the combined PM-AM signal can be isolated by square-law detection in a photodetector and can then be used to compensate for the PM-AM signal based on an optical homodyne method. Using the AM compensation technique, we successfully developed a simple and cost-effective phase extraction method applicable to the PM-AM optical signal of a DM-OIL semiconductor laser.

Tunable semiconductor lasers

NASA Technical Reports Server (NTRS)

Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

2006-01-01

Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

A 4 U laser heterodyne radiometer for methane (CH4) and carbon dioxide (CO2) measurements from an occultation-viewing CubeSat

NASA Astrophysics Data System (ADS)

Wilson, Emily L.; DiGregorio, A. J.; Riot, Vincent J.; Ammons, Mark S.; Bruner, William W.; Carter, Darrell; Mao, Jianping; Ramanathan, Anand; Strahan, Susan E.; Oman, Luke D.; Hoffman, Christine; Garner, Richard M.

2017-03-01

We present a design for a 4 U (20 cm  ×  20 cm  ×  10 cm) occultation-viewing laser heterodyne radiometer (LHR) that measures methane (CH4), carbon dioxide (CO2) and water vapor (H2O) in the limb that is designed for deployment on a 6 U CubeSat. The LHR design collects sunlight that has undergone absorption by the trace gas and mixes it with a distributive feedback (DFB) laser centered at 1640 nm that scans across CO2, CH4, and H2O absorption features. Upper troposphere/lower stratosphere measurements of these gases provide key inputs to stratospheric circulation models: measuring stratospheric circulation and its variability is essential for projecting how climate change will affect stratospheric ozone.

Study of gain-coupled distributed feedback laser based on high order surface gain-coupled gratings

NASA Astrophysics Data System (ADS)

Gao, Feng; Qin, Li; Chen, Yongyi; Jia, Peng; Chen, Chao; Cheng, LiWen; Chen, Hong; Liang, Lei; Zeng, Yugang; Zhang, Xing; Wu, Hao; Ning, Yongqiang; Wang, Lijun

2018-03-01

Single-longitudinal-mode, gain-coupled distributed feedback (DFB) lasers based on high order surface gain-coupled gratings are achieved. Periodic surface metal p-contacts with insulated grooves realize gain-coupled mechanism. To enhance gain contrast in the quantum wells without the introduction of effective index-coupled effect, groove length and depth were well designed. Our devices provided a single longitudinal mode with the maximum CW output power up to 48.8 mW/facet at 971.31 nm at 250 mA without facet coating, 3dB linewidth (<3.2 pm) and SMSR (>39 dB). Optical bistable characteristic was observed with a threshold current difference. Experimentally, devices with different cavity lengths were contrasted on power-current and spectrum characteristics. Due to easy fabrication technique and stable performance, it provides a method of fabricating practical gain-coupled distributed feedback lasers for commercial applications.

Compact CH 4 sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

DOE PAGES

Dong, Lei; Li, Chunguang; Sanchez, Nancy P.; ...

2016-01-05

A tunable diode laser absorption spectroscopy-based methane sensor, employing a dense-pattern multi-pass gas cell and a 3.3 µm, CW, DFB, room temperature interband cascade laser (ICL), is reported. The optical integration based on an advanced folded optical path design and an efficient ICL control system with appropriate electrical power management resulted in a CH 4 sensor with a small footprint (32 x 20 x 17 cm 3) and low-power consumption (6 W). Polynomial and least-squares fit algorithms are employed to remove the baseline of the spectral scan and retrieve CH 4 concentrations, respectively. An Allan-Werle deviation analysis shows that themore » measurement precision can reach 1.4 ppb for a 60 s averaging time. Continuous measurements covering a seven-day period were performed to demonstrate the stability and robustness of the reported CH 4 sensor system.« less

Compact CH 4 sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Lei; Li, Chunguang; Sanchez, Nancy P.

A tunable diode laser absorption spectroscopy-based methane sensor, employing a dense-pattern multi-pass gas cell and a 3.3 µm, CW, DFB, room temperature interband cascade laser (ICL), is reported. The optical integration based on an advanced folded optical path design and an efficient ICL control system with appropriate electrical power management resulted in a CH 4 sensor with a small footprint (32 x 20 x 17 cm 3) and low-power consumption (6 W). Polynomial and least-squares fit algorithms are employed to remove the baseline of the spectral scan and retrieve CH 4 concentrations, respectively. An Allan-Werle deviation analysis shows that themore » measurement precision can reach 1.4 ppb for a 60 s averaging time. Continuous measurements covering a seven-day period were performed to demonstrate the stability and robustness of the reported CH 4 sensor system.« less

A compact semiconductor digital interferometer and its applications

NASA Astrophysics Data System (ADS)

Britsky, Oleksander I.; Gorbov, Ivan V.; Petrov, Viacheslav V.; Balagura, Iryna V.

2015-05-01

The possibility of using semiconductor laser interferometers to measure displacements at the nanometer scale was demonstrated. The creation principles of miniature digital Michelson interferometers based on semiconductor lasers were proposed. The advanced processing algorithm for the interferometer quadrature signals was designed. It enabled to reduce restrictions on speed of measured movements. A miniature semiconductor digital Michelson interferometer was developed. Designing of the precision temperature stability system for miniature low-cost semiconductor laser with 0.01ºС accuracy enabled to use it for creation of compact interferometer rather than a helium-neon one. Proper firmware and software was designed for the interferometer signals real-time processing and conversion in to respective shifts. In the result the relative displacement between 0-500 mm was measured with a resolution of better than 1 nm. Advantages and disadvantages of practical use of the compact semiconductor digital interferometer in seismometers for the measurement of shifts were shown.

On the possibility of using the dynamic Franz - Keldysh effect to detect the parameters of high-power IR laser radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grigor'ev, A M

2011-05-31

The increase in the absorption of light by a semiconductor (when the light photon energy is somewhat smaller than the semiconductor bandgap or equals it) in the presence of a strong light wave (for which the semiconductor is transparent) has been investigated. The possibility of designing novel light detectors for measuring the energy parameters and spatial and temporal characteristics of high-power IR laser radiation is demonstrated. (measurement of laser radiation parameters)

Semiconductor laser technology for remote sensing experiments

NASA Technical Reports Server (NTRS)

Katz, Joseph

1988-01-01

Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

Widely tunable telecom MEMS-VCSEL for terahertz photomixing.

PubMed

Haidar, Mohammad Tanvir; Preu, Sascha; Paul, Sujoy; Gierl, Christian; Cesar, Julijan; Emsia, Ali; Küppers, Franko

2015-10-01

We report frequency-tunable terahertz (THz) generation with a photomixer driven by an ultra-broadband tunable micro-electro-mechanical system vertical-cavity surface-emitting laser (MEMS-VCSEL) and a fixed-wavelength VCSEL, as well as a tunable MEMS-VCSEL mixed with a distributed feedback (DFB) diode. A total frequency span of 3.4 THz is covered in direct detection mode and 3.23 THz in the homodyne mode. The tuning range is solely limited by the dynamic range of the photomixers and the Schottky diode/photoconductor used in the experiment.

Quantifying stochasticity in the dynamics of delay-coupled semiconductor lasers via forbidden patterns.

PubMed

Tiana-Alsina, Jordi; Buldú, Javier M; Torrent, M C; García-Ojalvo, Jordi

2010-01-28

We quantify the level of stochasticity in the dynamics of two mutually coupled semiconductor lasers. Specifically, we concentrate on a regime in which the lasers synchronize their dynamics with a non-zero lag time, and the leader and laggard roles alternate irregularly between the lasers. We analyse this switching dynamics in terms of the number of forbidden patterns of the alternate time series. The results reveal that the system operates in a stochastic regime, with the level of stochasticity decreasing as the lasers are pumped further away from their lasing threshold. This behaviour is similar to that exhibited by a single semiconductor laser subject to external optical feedback, as its dynamics shifts from the regime of low-frequency fluctuations to coherence collapse. This journal is © 2010 The Royal Society

Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

PubMed

Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

2016-11-15

Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance

DTIC Science & Technology

2017-02-01

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance (Invited paper) Christine A...epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on QCL operation, and establishing correlations between epitaxial growth and materials...QCLs emitting in this range. Index terms – Quantum cascade lasers, semiconductor growth, semiconductor epitaxial layers, infrared emitters. I

High Speed Laser with 100 Ghz Resonance Frequency

DTIC Science & Technology

2014-02-28

applications, such as opto - electronic oscillators . Recently, however, by optimizing the detuning frequency and injection ratio, we have shown enhanced...semiconductor lasers has been limited by relaxation oscillation frequency to < 40 GHz. By using strong optical injection locking, we report resonance...direct modulation bandwidth of semiconductor lasers. In a typical laser, the relaxation oscillation [resonance] frequency is a figure-of-merit that is a

Development of high yielding photonic light delivery system for photodynamic therapy of esophageal carcinomas

NASA Astrophysics Data System (ADS)

Premasiri, Amaranath; Happawana, Gemunu; Rosen, Arye

2007-02-01

Photodynamic therapy (PDT) is an approved treatment modality for Barrett's and invasive esophageal carcinoma. Proper Combination of photosentizing agent, oxygen, and a specific wavelength of light to activate the photosentizing agents is necessary for the cytotoxic destruction of cancerous cells by PDT. As a light source expensive solid-state laser sources currently are being used for the treatment. Inexpensive semiconductor lasers have been suggested for the light delivery system, however packaging of semiconductor lasers for optimal optical power output is challenging. In this paper, we present a multidirectional direct water-cooling of semiconductor lasers that provides a better efficiency than the conventional unidirectional cooling. AlGaAsP lasers were tested under de-ionized (DI) water and it is shown that the optical power output of the lasers under the DI water is much higher than that of the uni-directional cooling of lasers. Also, in this paper we discuss how direct DI water-cooling can optimize power output of semiconductor lasers. Thereafter an optimal design of the semiconductor laser package is shown with the DI water-cooling system. Further, a microwave antenna is designed which is to be imprinted on to a balloon catheter in order to provide local heating of esophagus, leading to an increase in local oxygenation of the tumor to generate an effective level of singlet oxygen for cellular death. Finally the optimal level of light energy that is required to achieve the expected level of singlet oxygen is modeled to design an efficient PDT protocol.

Integrated semiconductor twin-microdisk laser under mutually optical injection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng

2015-05-11

We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due tomore » strong optical interaction between the two microdisks.« less

Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devicesmore » showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.« less

Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

DOE PAGES

Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi; ...

2017-03-24

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devicesmore » showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.« less

Plastic lab-on-a-chip for fluorescence excitation with integrated organic semiconductor lasers.

PubMed

Vannahme, Christoph; Klinkhammer, Sönke; Lemmer, Uli; Mappes, Timo

2011-04-25

Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM), deep ultraviolet induced waveguides, and a nanostructured microfluidic channel are integrated into a poly(methyl methacrylate) (PMMA) substrate. A simple and parallel fabrication process is used comprising thermal imprint, DUV exposure, evaporation of the laser material, and sealing by thermal bonding. The excitation of two fluorescent marker model systems including labeled antibodies with light emitted by integrated lasers is demonstrated.

Electrically driven deep ultraviolet MgZnO lasers at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM)more » random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.« less

Electrically driven deep ultraviolet MgZnO lasers at room temperature

DOE PAGES

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit; ...

2017-06-01

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM)more » random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.« less

Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

PubMed Central

Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

2016-01-01

Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

Light sources based on semiconductor current filaments

DOEpatents

Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

2003-01-01

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. A.; Shashkin, I. S.; Bobretsova, Yu. K.

2016-10-15

Pulse-pumped MOVPE-fabricated (metal-organic vapor-phase epitaxy) semiconductor lasers emitting in the spectral ranges 1000–1100 and 1400–1600 nm at temperatures of 110–120 K are studied. It is found that cooling the lasers for both spectral ranges to low temperature results in their light–current curves approaching linearity, and an optical power of, respectively, 110 and 20 W can be attained. The low-temperature effect is reduced for lasers emitting in the spectral range 1400–1600 nm. The processes affecting a rise in the internal optical loss in semiconductor lasers are considered. It is shown that an increase in the carrier concentration in the waveguide ofmore » a laser structure greatly depends on temperature and is determined by the noninstantaneous capture (capture rate) of carriers from the waveguide into the active region. It is demonstrated that, upon lowering the temperature to 115K, the concentration of electrons and holes in the waveguide becomes lower, which leads to a significant decrease in the internal optical loss and to an increase in the output optical power of the semiconductor laser.« less

Semiconductor devices incorporating multilayer interference regions

DOEpatents

Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

1990-01-01

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

2.49 GHz low phase-noise optoelectronic oscillator using 1.55μm VCSEL for avionics and aerospace applications

NASA Astrophysics Data System (ADS)

Hayat, Ahmad; Bacou, Alexandre; Rissons, Angelique; Mollier, Jean-Claude

2009-02-01

We present here a 1.55 μm single mode Vertical-Cavity Surface-Emitting Laser (VCSEL) based low phasenoise ring optoelectronic (OEO) oscillator operating at 2.49 GHz for aerospace, avionics and embedded systems applications. Experiments using optical fibers of different lengths have been carried out to obtain optimal results. A phase-noise measurement of -107 dBc/Hz at an offset of 10 kHz from the carrier is obtained. A 3-dB linewidth of 16 Hz for this oscillator signal has been measured. An analysis of lateral mode spacing or Free Spectral Range (FSR) as a function of fiber length has been carried out. A parametric comparison with DFB Laser-based and multimode VCSEL-based opto-electronic oscillators is also presented.

Quantum cascade laser based sensor for open path measurement of atmospheric trace gases

NASA Astrophysics Data System (ADS)

Deng, Hao; Sun, Juan; Liu, Ningwu; Ding, Junya; Chao, Zhou; Zhang, Lei; Li, Jingsong

2017-02-01

A sensitive open-path gas sensor employing a continuous-wave (CW) distributed feedback (DFB) quantum cascade laser (QCL) and direct absorption spectroscopy (DAS) was demonstrated for simultaneously measurements of atmospheric CO and N2O. Two interference free absorption lines located at 2190.0175 cm-1 and 2190.3498 cm-1 were selected for CO and N2O concentration measurements, respectively. The Allan variance analysis technique was performed to investigate the long-term performance of the QCL sensor system. The results indicate that a detection limit of 9.92 ppb for CO and 7.7 ppb for N2O with 1-s integration time were achieved, which can be further improved to 1.5 ppb and 1.1 ppb by increasing the average time up to 80 s.

Large depth high-precision FMCW tomography using a distributed feedback laser array

NASA Astrophysics Data System (ADS)

DiLazaro, Thomas; Nehmetallah, George

2018-02-01

Swept-source optical coherence tomography (SS-OCT) has been widely employed in the medical industry for the high resolution imaging of subsurface biological structures. SS-OCT typically exhibits axial resolutions on the order of tens of microns at speeds of hundreds of kilohertz. Using the same coherent heterodyne detection technique, frequency modulated continuous wave (FMCW) ladar has been used for highly precise ranging for distances up to kilometers. Distributed feedback lasers (DFBs) have been used as a simple and inexpensive source for FMCW ranging. Here, we use a bandwidth-combined DFB array for sub-surface volume imaging at a 27 μm axial resolution over meters of distance. 2D and 3D tomographic images of several semi-transparent and diffuse objects at distances up to 10 m will be presented.

Method for manufacturing electrical contacts for a thin-film semiconductor device

DOEpatents

Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

1988-11-08

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Electrical contacts for a thin-film semiconductor device

DOEpatents

Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

1989-08-08

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications.

PubMed

Bilenca, A; Yun, S H; Tearney, G J; Bouma, B E

2006-03-15

Recent results have demonstrated unprecedented wavelength-tuning speed and repetition rate performance of semiconductor ring lasers incorporating scanning filters. However, several unique operational characteristics of these lasers have not been adequately explained, and the lack of an accurate model has hindered optimization. We numerically investigated the characteristics of these sources, using a semiconductor optical amplifier (SOA) traveling-wave Langevin model, and found good agreement with experimental measurements. In particular, we explored the role of the SOA refractive-index nonlinearities in determining the intracavity frequency-shift-broadening and the emitted power dependence on scan speed and direction. Our model predicts both continuous-wave and pulse operation and shows a universal relationship between the output power of lasers that have different cavity lengths and the filter peak frequency shift per round trip, therefore revealing the advantage of short cavities for high-speed biomedical imaging.

REVIEW ARTICLE: Harmonically mode-locked semiconductor-based lasers as high repetition rate ultralow noise pulse train and optical frequency comb sources

NASA Astrophysics Data System (ADS)

Quinlan, F.; Ozharar, S.; Gee, S.; Delfyett, P. J.

2009-10-01

Recent experimental work on semiconductor-based harmonically mode-locked lasers geared toward low noise applications is reviewed. Active, harmonic mode-locking of semiconductor-based lasers has proven to be an excellent way to generate 10 GHz repetition rate pulse trains with pulse-to-pulse timing jitter of only a few femtoseconds without requiring active feedback stabilization. This level of timing jitter is achieved in long fiberized ring cavities and relies upon such factors as low noise rf sources as mode-lockers, high optical power, intracavity dispersion management and intracavity phase modulation. When a high finesse etalon is placed within the optical cavity, semiconductor-based harmonically mode-locked lasers can be used as optical frequency comb sources with 10 GHz mode spacing. When active mode-locking is replaced with regenerative mode-locking, a completely self-contained comb source is created, referenced to the intracavity etalon.

Semiconductor devices incorporating multilayer interference regions

DOEpatents

Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

1987-08-31

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

DOEpatents

Haller, Eugene E.; Brundermann, Erik

2000-01-01

A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

Non-Shilnikov cascades of spikes and hubs in a semiconductor laser with optoelectronic feedback.

PubMed

Freire, Joana G; Gallas, Jason A C

2010-09-01

Incomplete homoclinic scenarios were recently measured in a semiconductor laser with optoelectronic feedback. We show here that such a laser contains cascades of spirals of periodic oscillations and hubs which look identical to the familiar ones observed in complete homoclinic scenarios. This means that hubs are far more general than presumed so far, being not limited by Shilnikov's theorem. Laser hubs open the possibility of measuring complex distributions of non-Shilnikov laser oscillations, and we briefly discuss how to do it.

Calibration-free absolute frequency response measurement of directly modulated lasers based on additional modulation.

PubMed

Zhang, Shangjian; Zou, Xinhai; Wang, Heng; Zhang, Yali; Lu, Rongguo; Liu, Yong

2015-10-15

A calibration-free electrical method is proposed for measuring the absolute frequency response of directly modulated semiconductor lasers based on additional modulation. The method achieves the electrical domain measurement of the modulation index of directly modulated lasers without the need for correcting the responsivity fluctuation in the photodetection. Moreover, it doubles measuring frequency range by setting a specific frequency relationship between the direct and additional modulation. Both the absolute and relative frequency response of semiconductor lasers are experimentally measured from the electrical spectrum of the twice-modulated optical signal, and the measured results are compared to those obtained with conventional methods to check the consistency. The proposed method provides calibration-free and accurate measurement for high-speed semiconductor lasers with high-resolution electrical spectrum analysis.

Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices

DOEpatents

Horn, Kevin M.

2013-07-09

A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.

Recurrent Circuitry for Balancing Sleep Need and Sleep.

PubMed

Donlea, Jeffrey M; Pimentel, Diogo; Talbot, Clifford B; Kempf, Anissa; Omoto, Jaison J; Hartenstein, Volker; Miesenböck, Gero

2018-01-17

Sleep-promoting neurons in the dorsal fan-shaped body (dFB) of Drosophila are integral to sleep homeostasis, but how these cells impose sleep on the organism is unknown. We report that dFB neurons communicate via inhibitory transmitters, including allatostatin-A (AstA), with interneurons connecting the superior arch with the ellipsoid body of the central complex. These "helicon cells" express the galanin receptor homolog AstA-R1, respond to visual input, gate locomotion, and are inhibited by AstA, suggesting that dFB neurons promote rest by suppressing visually guided movement. Sleep changes caused by enhanced or diminished allatostatinergic transmission from dFB neurons and by inhibition or optogenetic stimulation of helicon cells support this notion. Helicon cells provide excitation to R2 neurons of the ellipsoid body, whose activity-dependent plasticity signals rising sleep pressure to the dFB. By virtue of this autoregulatory loop, dFB-mediated inhibition interrupts processes that incur a sleep debt, allowing restorative sleep to rebalance the books. VIDEO ABSTRACT. Copyright © 2017 The Authors. Published by Elsevier Inc. All rights reserved.

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

NASA Astrophysics Data System (ADS)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present new insight into the physics of nonlinear coherent pulse propagation phenomena in active (semiconductor) gain media. Our numerical full time-domain simulations are shown to generally agree well with analytical predictions, while in the case of optical pulses with large pulse areas or few-cycle pulses they reveal the limits of analytic approaches. Finally, it is demonstrated that coherent ultrafast nonlinear propagation effects become less distinctive if we apply a realistic model of the quantum well semiconductor gain material, consider characteristic loss channels and take into account de-phasing processes and homogeneous broadening.

Receiver design, performance analysis, and evaluation for space-borne laser altimeters and space-to-space laser ranging systems

NASA Technical Reports Server (NTRS)

Davidson, Frederic M.; Sun, Xiaoli; Field, Christopher T.

1995-01-01

This Interim report consists of a manuscript, 'Receiver Design for Satellite to Satellite Laser Ranging Instrument,' and copies of two papers we co-authored, 'Demonstration of High Sensitivity Laser Ranging System' and 'Semiconductor Laser-Based Ranging Instrument for Earth Gravity Measurements. ' These two papers were presented at the conference Semiconductor Lasers, Advanced Devices and Applications, August 21 -23, 1995, Keystone Colorado. The manuscript is a draft in the preparation for publication, which summarizes the theory we developed on space-borne laser ranging instrument for gravity measurements.

FIBER AND INTEGRATED OPTICS. OTHER TOPICS IN QUANTUM ELECTRONICS: Laser generation of dislocations and mechanism of anisotropic melting of semiconductor surfaces

NASA Astrophysics Data System (ADS)

Volodin, B. L.; Emel'yanov, Vladimir I.

1990-05-01

An analysis is made of a vacancy-deformation mechanism of generation of dislocations by laser radiation involving condensation of laser-induced vacancies when the vacancy concentration exceeds a certain critical value. The theory can be used to estimate the radius of the resultant dislocation loops and their density. It is used to interpret anisotropic laser melting of semiconductor surfaces.

Power- or frequency-driven hysteresis for continuous-wave optically injected distributed-feedback semiconductor lasers.

PubMed

Blin, Stéphane; Vaudel, Olivier; Besnard, Pascal; Gabet, Renaud

2009-05-25

Bistabilities between a steady (or pulsating, chaotic) and different pulsating regimes are investigated for an optically injected semi-conductor laser. Both numerical and experimental studies are reported for continuous-wave single-mode semiconductor distributed-feedback lasers emitting at 1.55 microm. Hysteresis are driven by either changing the optically injected power or the frequency difference between both lasers. The effect of the injected laser pumping rate is also examined. Systematic mappings of the possible laser outputs (injection locking, bimodal, wave mixing, chaos or relaxation oscillations) are carried out. At small pumping rates (1.2 times threshold), only locking and bimodal regimes are observed. The extent of the bistable area is either 11 dB or 35 GHz, depending on the varying parameters. At high pumping rates (4 times threshold), numerous injection regimes are observed. Injection locking and its bistabilities are also reported for secondary longitudinal modes.

Modes in light wave propagating in semiconductor laser

NASA Technical Reports Server (NTRS)

Manko, Margarita A.

1994-01-01

The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

Distributed feedback InGaN/GaN laser diodes

NASA Astrophysics Data System (ADS)

Slight, Thomas J.; Watson, Scott; Yadav, Amit; Grzanka, Szymon; Stanczyk, Szymon; Docherty, Kevin E.; Rafailov, Edik; Perlin, Piotr; Najda, Steve; Leszczyński, Mike; Kelly, Anthony E.

2018-02-01

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

Semiconductor Nanomaterials-Based Fluorescence Spectroscopic and Matrix-Assisted Laser Desorption/Ionization (MALDI) Mass Spectrometric Approaches to Proteome Analysis

PubMed Central

Kailasa, Suresh Kumar; Cheng, Kuang-Hung; Wu, Hui-Fen

2013-01-01

Semiconductor quantum dots (QDs) or nanoparticles (NPs) exhibit very unusual physico-chemcial and optical properties. This review article introduces the applications of semiconductor nanomaterials (NMs) in fluorescence spectroscopy and matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS) for biomolecule analysis. Due to their unique physico-chemical and optical properties, semiconductors NMs have created many new platforms for investigating biomolecular structures and information in modern biology. These semiconductor NMs served as effective fluorescent probes for sensing proteins and cells and acted as affinity or concentrating probes for enriching peptides, proteins and bacteria proteins prior to MALDI-MS analysis. PMID:28788422

Dynamical regimes and intracavity propagation delay in external cavity semiconductor diode lasers

NASA Astrophysics Data System (ADS)

Jayaprasath, E.; Sivaprakasam, S.

2017-11-01

Intracavity propagation delay, a delay introduced by a semiconductor diode laser, is found to significantly influence synchronization of multiple semiconductor diode lasers, operated either in stable or in chaotic regime. Two diode lasers coupled in unidirectional scheme is considered in this numerical study. A diode laser subjected to an optical feedback, also called an external cavity diode laser, acts as the transmitter laser (TL). A solitary diode laser acts as the receiver laser (RL). The optical output of the TL is coupled to the RL and laser operating parameters are optimized to achieve synchronization in their output intensities. The time-of-flight between the TL and RL introduces an intercavity time delay in the dynamics of RL. In addition to this, an intracavity propagation delay arises as the TL's field propagated within the RL. This intracavity propagation delay is evaluated by cross-correlation analysis between the output intensities of the lasers. The intracavity propagation delay is found to increase as the external cavity feedback rate of TL is increased, while an increment in the injection rate between the two lasers resulted in a reduction of intracavity propagation delay.

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

NASA Technical Reports Server (NTRS)

Jordan, Rebecca H.; King, Oliver; Wicks, Gary W.; Hall, Dennis G.; Anderson, Erik H.; Rooks, Michael J.

1993-01-01

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Estimation of lifetime distributions on 1550-nm DFB laser diodes using Monte-Carlo statistic computations

NASA Astrophysics Data System (ADS)

Deshayes, Yannick; Verdier, Frederic; Bechou, Laurent; Tregon, Bernard; Danto, Yves; Laffitte, Dominique; Goudard, Jean Luc

2004-09-01

High performance and high reliability are two of the most important goals driving the penetration of optical transmission into telecommunication systems ranging from 880 nm to 1550 nm. Lifetime prediction defined as the time at which a parameter reaches its maximum acceptable shirt still stays the main result in terms of reliability estimation for a technology. For optoelectronic emissive components, selection tests and life testing are specifically used for reliability evaluation according to Telcordia GR-468 CORE requirements. This approach is based on extrapolation of degradation laws, based on physics of failure and electrical or optical parameters, allowing both strong test time reduction and long-term reliability prediction. Unfortunately, in the case of mature technology, there is a growing complexity to calculate average lifetime and failure rates (FITs) using ageing tests in particular due to extremely low failure rates. For present laser diode technologies, time to failure tend to be 106 hours aged under typical conditions (Popt=10 mW and T=80°C). These ageing tests must be performed on more than 100 components aged during 10000 hours mixing different temperatures and drive current conditions conducting to acceleration factors above 300-400. These conditions are high-cost, time consuming and cannot give a complete distribution of times to failure. A new approach consists in use statistic computations to extrapolate lifetime distribution and failure rates in operating conditions from physical parameters of experimental degradation laws. In this paper, Distributed Feedback single mode laser diodes (DFB-LD) used for 1550 nm telecommunication network working at 2.5 Gbit/s transfer rate are studied. Electrical and optical parameters have been measured before and after ageing tests, performed at constant current, according to Telcordia GR-468 requirements. Cumulative failure rates and lifetime distributions are computed using statistic calculations and equations of drift mechanisms versus time fitted from experimental measurements.

Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

PubMed Central

Elia, Angela; Lugarà, Pietro Mario; Di Franco, Cinzia; Spagnolo, Vincenzo

2009-01-01

The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques. PMID:22303143

Recent Results With Coupled Opto-Electronic Oscillators

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, L.; Wu, C.; Davis, L.; Forouhar, S.

1998-07-01

We present experimental results of coupled opto-electronic oscillators (COEOs) constructed with a semiconductor optical-amplifier-based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding-pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 ps and RF signals as high in frequency as 18 GHz with a spectral purity comparable to an HP 8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Recent results with the coupled opto-electronic oscillator

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak

1998-11-01

We present experimental results of coupled opto-electronic oscillators (COEO) constructed with a semiconductor optical amplifier based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Ring resonator based narrow-linewidth semiconductor lasers

NASA Technical Reports Server (NTRS)

Ksendzov, Alexander (Inventor)

2005-01-01

The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Computer model for quasioptic waveguide lasers

NASA Astrophysics Data System (ADS)

Wenzel, H.; Wünsche, H. J.

1988-11-01

A description is given of a numerical model of a semiconductor laser with a quasioptic waveguide (index guide). This model can be used on a personal computer. The model can be used to find the radiation field distributions in the vertical and lateral directions, the pump currents at the threshold, and also to solve dynamic rate equations.

Photonic Arbitrary Waveform Generation Technology

DTIC Science & Technology

2006-06-01

locked external- cavity semiconductor diode ring laser “, Optics Letters, Vol. 27, No. 9 , 719-721, (2002). [22] S. Gee, F. Quinlan, S. Ozharar... optical pulses that one is accustomed to. Modelocked semiconductor lasers are used to generate a set of phase locked optical frequencies on a periodic...The corresponding optical spectrum of the laser consists of a comb of periodically spaced, phase - locked

Efficiency of soft tissue incision with a novel 445-nm semiconductor laser.

PubMed

Braun, Andreas; Kettner, Moritz; Berthold, Michael; Wenzler, Johannes-Simon; Heymann, Paul Günther Baptist; Frankenberger, Roland

2018-01-01

Using a 445-nm semiconductor laser for tissue incision, an effective cut is expected due to the special absorption properties of blue laser light in soft tissues. The aim of the present study was the histological evaluation of tissue samples after incision with a 445-nm diode laser. Forty soft tissue specimens were obtained from pork oral mucosa and mounted on a motorized linear translation stage. The handpiece of a high-frequency surgery device, a 970-nm semiconductor laser, and a 445-nm semiconductor laser were connected to the slide, allowing a constant linear movement (2 mm/s) and the same distance of the working tip to the soft tissue's surface. Four incisions were made each: (I) 970-nm laser with conditioned fiber tip, contact mode at 3-W cw; (II-III): 445-nm laser with non-conditioned fiber tip, contact mode at 2-W cw, and non-contact mode (1 mm) at 2 W; and (IV): high-frequency surgery device with straight working tip, 90° angulation, contact mode at 50 W. Histological analysis was performed after H&E staining of the embedded specimens at 35-fold magnification. The comparison of the incision depths showed a significant difference depending on the laser wavelength and the selected laser parameters. The highest incision depth was achieved with the 445-nm laser contact mode (median depth 0.61 mm, min 0.26, max 1.17, interquartile range 0.58) (p < 0.05) with the lowest amount of soft tissue denaturation (p < 0.05). The lowest incision depth was measured for the high-frequency surgical device (median depth 0.36 mm, min 0.12, max 1.12, interquartile range 0.23) (p < 0.05). Using a 445-nm semiconductor laser, a higher cutting efficiency can be expected when compared with a 970-nm diode laser and high-frequency surgery. Even the 445-nm laser application in non-contact mode shows clinically acceptable incision depths without signs of extensive soft tissue denaturation.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

PubMed

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation

PubMed Central

Wan, W. J.; Li, H.; Zhou, T.; Cao, J. C.

2017-01-01

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification. PMID:28272492

Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

DOEpatents

Hohimer, John P.

1994-01-01

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

DOEpatents

Hohimer, J.P.

1994-06-07

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure. 6 figs.

Industrial integration of high coherence tunable VECSEL in the NIR and MIR

NASA Astrophysics Data System (ADS)

Denet, Stéphane; Chomet, Baptiste; Lecocq, Vincent; Ferrières, Laurence; Myara, Mikhaël.; Cerutti, Laurent; Sagnes, Isabelle; Garnache, Arnaud

2016-03-01

Laser technology is finding applications in areas such as high resolution spectroscopy, radar-lidar, velocimetry, or atomic clock where highly coherent tunable high power light sources are required. The Vertical External Cavity Surface Emitting Laser (VECSEL) technology [1] has been identified for years as a good candidate to reach high power, high coherence and broad tunability while covering a wide emission wavelength range exploiting III-V semiconductor technologies. Offering such performances in the Near- and Middle-IR range, GaAs- and Sb-based VECSEL technologies seem to be a well suited path to meet the required specifications of demanding applications. Built up in this field, our expertise allows the realization of compact and low power consumption marketable products, with performances that do not exist on the market today in the 0.8- 1.1 μm and 2-2.5 μm spectral range. Here we demonstrate highly coherent broadly tunable single frequency micro-chip, intracavity element free, patented VECSEL technology, integrated into a compact module with driving electronics. VECSEL devices emitting in the Near and Middle-IR developed in the frame of this work [2] exhibit exciting features compared to diode-pumped solid-state lasers and DFB diode lasers; they combine high power (>100mW) high coherence with a low divergence diffraction limited TEM00 beam, class A dynamics with Relative Intensity Noise as low as -140dB/Hz and at shot noise level above 200MHz RF frequency (up to 160GHz), free running narrow linewidth at sub MHz level (fundamental limit at Hz level) with high spectral purity (SMSR >55dB), linear polarization (50dB suppression ratio), and broadband continuous tunability greater than 400GHz (< 30V piezo voltage, 6kHz cut off frequency) with total tunability up to 3THz. Those performances can all be reached thanks to the high finesse cavity of VECSEL technology, associated to ideal homogeneous QW gain behaviour [3]. In addition, the compact design without any movable intracavity elements offers a robust single frequency regime with a long term wavelength stability better than few GHz/h (ambient thermal drift limited). Those devices surpass the state of the art commercial technologies thanks to a combination of power-coherence wavelength tunability performances and integration.

Theory of active mode locking of a semiconductor laser in an external cavity

NASA Technical Reports Server (NTRS)

Yeung, J. A.

1981-01-01

An analytical treatment is given for the active mode locking of a semiconductor laser in an external resonator. The width of the mode-locked pulses is obtained as a function of the laser and cavity parameters and the amount of frequency detuning. The effects of self-modulation and saturation are included in the treatment. The pulse output is compared with that obtained by a strong modulation of the laser diode with no external cavity.

Two-photon fluorescence bioimaging with an all-semiconductor laser picosecond pulse source.

PubMed

Kuramoto, Masaru; Kitajima, Nobuyoshi; Guo, Hengchang; Furushima, Yuji; Ikeda, Masao; Yokoyama, Hiroyuki

2007-09-15

We have demonstrated successful two-photon excitation fluorescence bioimaging using a high-power pulsed all-semiconductor laser. Toward this purpose, we developed a pulsed light source consisting of a mode-locked laser diode and a two-stage diode laser amplifier. This pulsed light source provided optical pulses of 5 ps duration and having a maximum peak power of over 100 W at a wavelength of 800 nm and a repetition frequency of 500 MHz.

Recent Vertical External Cavity Surface Emitting Lasers (VECSELs) Developments for Sensor Applications (POSTPRINT)

DTIC Science & Technology

2013-02-01

edge-emitting strained InxGa1−xSb/AlyGa1−ySb quantum well struc- tures using solid-source molecular beam epitaxy (MBE) with varying barrier heights...intersubband quantum wells. The most common high-power edge-emitting semiconductor lasers suffter from poor beam quality, due primarily to the linewidth...reduces the power scalability of semiconductor lasers. In vertical cavity surface emitting lasers ( VCSELs ), light propagates parallel to the growth

Enhanced optical gain clamping for upstream packet based traffic on hybrid WDM/TDM-PON using fiber Bragg grating

NASA Astrophysics Data System (ADS)

Neto, B.; Klingler, A.; Reis, C.; Dionísio, R. P.; Nogueira, R. N.; Teixeira, A. L. J.; André, P. S.

2011-03-01

In this paper, we propose a method to mitigate the temporal power transients arising from Erbium doped fiber amplifiers (EDFAs) on packeted/bursty scenario. The technique, applicable on hybrid WDM/TDM-PON for extended reach, is based on a low power clamping provided by a distributed feedback (DFB) laser and a fiber Bragg grating (FBG). An improvement in the data signal Q factor was achieved keeping the clamping control signal with a low power, accompanied by a maximum reduction in the gain excursion of 1.12 dB.

Simple refractometer based on in-line fiber interferometers

NASA Astrophysics Data System (ADS)

Esteban, Ó.; Martínez Manuel, R.; Shlyagin, M. G.

2015-09-01

A very simple but accurate optical fiber refractometer based on the Fresnel reflection in the fiber tip and two in-line low-reflective mirrors for light intensity referencing is reported. Each mirror was generated by connecting together 2 fiber sections with FC/PC and FC/APC connectors using the standard FC/PC mating sleeve. For the sensor interrogation, a standard DFB diode laser pumped with a sawtooth-wave current was used. A resolution of 6 x 10-4 was experimentally demonstrated using different liquids. A simple sensor construction and the use of low cost components make the reported system interesting for many applications.

Frequency-doubled vertical-external-cavity surface-emitting laser

DOEpatents

Raymond, Thomas D.; Alford, William J.; Crawford, Mary H.; Allerman, Andrew A.

2002-01-01

A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

DOEpatents

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Characteristics of several NIR tuneable diode lasers for spectroscopic based gas sensing: a comparison.

PubMed

Weldon, Vincent; McInerney, David; Phelan, Richard; Lynch, Michael; Donegan, John

2006-04-01

Tuneable laser diodes were characterized and compared for use as tuneable sources in gas absorption spectroscopy. Specifically, the characteristics of monolithic widely tuneable single frequency lasers, such as sampled grating distributed Bragg reflector laser and modulated grating Y-branch laser diodes, recently developed for optical communications, with operating wavelengths in the 1,520 nm

Semiconductor laser-based optoelectronics oscillators

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak

1998-08-01

We demonstrate the realization of coupled opto-electronic oscillators (COEO) with different semiconductor lasers, including a ring laser, a Fabry-Perot laser, and a colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Thermo-optic locking of a semiconductor laser to a microcavity resonance.

PubMed

McRae, T G; Lee, Kwan H; McGovern, M; Gwyther, D; Bowen, W P

2009-11-23

We experimentally demonstrate thermo-optic locking of a semiconductor laser to an integrated toroidal optical microcavity. The lock is maintained for time periods exceeding twelve hours, without requiring any electronic control systems. Fast control is achieved by optical feedback induced by scattering centers within the microcavity, with thermal locking due to optical heating maintaining constructive interference between the cavity and the laser. Furthermore, the optical feedback acts to narrow the laser linewidth, with ultra high quality microtoroid resonances offering the potential for ultralow linewidth on-chip lasers.

Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

DOEpatents

Beach, Raymond J.; Benett, William J.; Mills, Steven T.

1997-01-01

The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a "rack and stack" configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber.

Optimum design on refrigeration system of high-repetition-frequency laser

NASA Astrophysics Data System (ADS)

Li, Gang; Li, Li; Jin, Yezhou; Sun, Xinhua; Mao, Shaojuan; Wang, Yuanbo

2014-12-01

A refrigeration system with fluid cycle, semiconductor cooler and air cooler is designed to solve the problems of thermal lensing effect and unstable output of high-repetition-frequency solid-state lasers. Utilizing a circulating water pump, water recycling system carries the water into laser cavity to absorb the heat then get to water cooling head. The water cooling head compacts cold spot of semiconductor cooling chips, so the heat is carried to hot spot which contacts the radiating fins, then is expelled through cooling fan. Finally, the cooled water return to tank. The above processes circulate to achieve the purposes of highly effective refrigeration in miniative solid-state lasers.The refrigeration and temperature control components are designed strictly to ensure refrigeration effect and practicability. we also set up a experiment to test the performances of this refrigeration system, the results show that the relationship between water temperature and cooling power of semiconductor cooling chip is linear at 20°C-30°C (operating temperature range of Nd:YAG), the higher of the water temperature, the higher of cooling power. According to the results, cooling power of single semiconductor cooling chip is above 60W, and the total cooling power of three semiconductor cooling chips achieves 200W that will satisfy the refrigeration require of the miniative solid-state lasers.The performance parameters of laser pulse are also tested, include pulse waveform, spectrogram and laser spot. All of that indicate that this refrigeration system can ensure the output of high-repetition-frequency pulse whit high power and stability.

Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

PubMed Central

2013-01-01

In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms’ redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones. PMID:23735193

Designing new classes of high-power, high-brightness VECSELs

NASA Astrophysics Data System (ADS)

Moloney, J. V.; Zakharian, A. R.; Hader, J.; Koch, Stephan W.

2005-10-01

Optically-pumped vertical external cavity semiconductor lasers offer the exciting possibility of designing kW-class solid state lasers that provide significant advantages over their doped YAG, thin-disk YAG and fiber counterparts. The basic VECSEL/OPSL (optically-pumped semiconductor laser) structure consists of a very thin (approximately 6 micron thick) active mirror consisting of a DBR high-reflectivity stack followed by a multiple quantum well resonant periodic (RPG) structure. An external mirror (reflectivity typically between 94%-98%) provides conventional optical feedback to the active semiconductor mirror chip. The "cold" cavity needs to be designed to take into account the semiconductor sub-cavity resonance shift with temperature and, importantly, the more rapid shift of the semiconductor material gain peak with temperature. Thermal management proves critical in optimizing the device for serious power scaling. We will describe a closed-loop procedure that begins with a design of the semiconductor active epi structure. This feeds into the sub-cavity optimization, optical and thermal transport within the active structure and thermal transport though the various heat sinking elements. Novel schemes for power scaling beyond current record performances will be discussed.

Metal-optic and Plasmonic Semiconductor-based Nanolasers

DTIC Science & Technology

2012-05-07

provides a means to integrate laser sources for silicon photonics technology. Using wafer bonding techniques, the metal- clad nanocavity can be integrated...SUPPLEMENTARY NOTES 14. ABSTRACT Over the past few decades, semiconductor lasers have relentlessly followed the path towards miniaturization...Smaller lasers are more energy e cient, are cheaper to make, and open up new applications in sensing and displays, among many other things. Yet, up until

A single-frequency double-pulse Ho:YLF laser for CO2-lidar

NASA Astrophysics Data System (ADS)

Kucirek, P.; Meissner, A.; Eiselt, P.; Höfer, M.; Hoffmann, D.

2016-03-01

A single-frequency q-switched Ho:YLF laser oscillator with a bow-tie ring resonator, specifically designed for highspectral stability, is reported. It is pumped with a dedicated Tm:YLF laser at 1.9 μm. The ramp-and-fire method with a DFB-diode laser as a reference is employed for generating single-frequency emission at 2051 nm. The laser is tested with different operating modes, including cw-pumping at different pulse repetition frequencies and gain-switched pumping. The standard deviation of the emission wavelength of the laser pulses is measured with the heterodyne technique at the different operating modes. Its dependence on the single-pass gain in the crystal and on the cavity finesse is investigated. At specific operating points the spectral stability of the laser pulses is 1.5 MHz (rms over 10 s). Under gain-switched pumping with 20% duty cycle and 2 W of average pump power, stable single-frequency pulse pairs with a temporal separation of 580 μs are produced at a repetition rate of 50 Hz. The measured pulse energy is 2 mJ (<2 % rms error on the pulse energy over 10 s) and the measured pulse duration is approx. 20 ns for each of the two pulses in the burst.

Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D A; Pikhtin, N A; Lyutetskiy, A V

2015-07-31

We report an experimental study of power characteristics of semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide as functions of cavity length, stripe contact width and mirror reflectivities. It is shown that at high current pump levels, the variation of the cavity parameters of a semiconductor laser (width, length and mirror reflectivities) influences the light – current (L – I) characteristic saturation and maximum optical power by affecting such laser characteristics, as the current density and the optical output loss. A model is elaborated and an optical power of semiconductor lasers is calculated by taking intomore » account the dependence of the internal optical loss on pump current density and concentration distribution of charge carriers and photons along the cavity axis of the cavity. It is found that only introduction of the dependence of the internal optical loss on pump current density to the calculation model provides a good agreement between experimental and calculated L – I characteristics for all scenarios of variations in the laser cavity parameters. (lasers)« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurmikko, Arto V

Synthesis of semiconductor nanomaterials by low-cost, solution-based methods is shown to lead to new classes of thin film light emitting materials. These materials have been integrated to demonstrative compact laser device testbeds to illustrate their potential for coherent emitters across the visible spectrum to disrupt established photonics technologies, particularly semiconductor lasers?

Toward continuous-wave operation of organic semiconductor lasers

PubMed Central

Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

2017-01-01

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

PubMed

Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

2017-10-24

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

Toward continuous-wave operation of organic semiconductor lasers.

PubMed

Sandanayaka, Atula S D; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

2017-04-01

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi-continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture.

Multi-gas sensing with quantum cascade laser array in the mid-infrared region

NASA Astrophysics Data System (ADS)

Bizet, Laurent; Vallon, Raphael; Parvitte, Bertrand; Brun, Mickael; Maisons, Gregory; Carras, Mathieu; Zeninari, Virginie

2017-05-01

Wide tunable lasers sources are useful for spectroscopy of complex molecules that have broad absorption spectra and for multiple sensing of smaller molecules. A region of interest is the mid-infrared region, where many species have strong ro-vibrational modes. In this paper a novel broad tunable source composed of a QCL DFB array and an arrayed waveguide grating (also called multiplexer) was used to perform multi-species spectroscopy (CO, C2H2, CO2). The array and the multiplexer are associated in a way to obtain a prototype that is non-sensitive to mechanical vibrations. A 2190-2220 cm^{-1} spectral range is covered by the chip. The arrayed waveguide grating combines beams to have a single output. A multi-pass White cell was used to demonstrate the efficiency of the multiplexer.

Fiber optic evanescent field sensor for detection of explosives and CO2 dissolved in water

NASA Astrophysics Data System (ADS)

Orghici, R.; Willer, U.; Gierszewska, M.; Waldvogel, S. R.; Schade, W.

2008-02-01

A fiber optic approach for the determination of the carbon dioxide concentration in the gas or fluid phase during sequestration, as well as for the sensing of the explosive TNT is described. The sensor consists of a quartz glass multimode fiber with core diameter of 200 μm and is based on the evanescent field principle. Cladding and jacket of the fiber are removed in the sensing portion, therefore interaction between light within the fiber and the surrounding medium is possible. A single-mode distributed feedback (DFB) laser diode with an emission wavelength around λ= 1.57 μm and a frequency doubled passively Q-switched Cr4+:Nd3+:YAG microchip laser (λ= 1064 nm)are used as light sources. The experimental setup and the sensitivity of the evanescent field sensor are characterized.

Coordinate interferometric system for measuring the position of a sample with infrared telecom laser diode

NASA Astrophysics Data System (ADS)

Holá, Miroslava; Lazar, Josef; Čížek, Martin; Hucl, Václav; Řeřucha, Šimon; Číp, Ondřej

2016-11-01

We report on a design of an interferometric position measuring system for control of a sample stage in an e-beam writer with reproducibility of the position on nanometer level and resolution below nanometer. We introduced differential configuration of the interferometer where the position is measured with respect to a central reference point to eliminate deformations caused by thermal and pressure effects on the vacuum chamber. The reference is here the electron gun of the writer. The interferometer is designed to operate at infrared, telecommunication wavelength due to the risk of interference of stray light with sensitive photodetectors in the chamber. The laser source is here a narrow-linewidth DFB laser diode with electronics of our own design offering precision and stability of temperature and current, low-noise, protection from rf interference, and high-frequency modulation. Detection of the interferometric signal relies on a novel derivative technique utilizing hf frequency modulation and phase-sensitive detection.

Portable standoff spectrometer for hazard identification using integrated quantum cascade laser arrays from 6.5 to 11 µm.

PubMed

Witinski, Mark F; Blanchard, Romain; Pfluegl, Christian; Diehl, Laurent; Li, Biao; Krishnamurthy, Kalyani; Pein, Brandt C; Azimi, Masud; Chen, Peili; Ulu, Gokhan; Vander Rhodes, Greg; Howle, Chris R; Lee, Linda; Clewes, Rhea J; Williams, Barry; Vakhshoori, Daryoosh

2018-04-30

This article presents new spectroscopic results in standoff chemical detection that are enabled by monolithic arrays of Distributed Feedback (DFB) Quantum Cascade Lasers (QCLs), with each array element at a slightly different wavelength than its neighbor. The standoff analysis of analyte/substrate pairs requires a laser source with characteristics offered uniquely by a QCL Array. This is particularly true for time-evolving liquid chemical warfare agent (CWA) analysis. In addition to describing the QCL array source developed for long wave infrared coverage, a description of an integrated prototype standoff detection system is provided. Experimental standoff detection results using the man-portable system for droplet examination from 1.3 meters are presented using the CWAs VX and T-mustard as test cases. Finally, we consider three significant challenges to working with droplets and liquid films in standoff spectroscopy: substrate uptake of the analyte, time-dependent droplet spread of the analyte, and variable substrate contributions to retrieved signals.

Compact CH{sub 4} sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Lei, E-mail: donglei@sxu.edu.cn; State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan 030006; Li, Chunguang

A tunable diode laser absorption spectroscopy-based methane sensor, employing a dense-pattern multi-pass gas cell and a 3.3 μm, CW, DFB, room temperature interband cascade laser (ICL), is reported. The optical integration based on an advanced folded optical path design and an efficient ICL control system with appropriate electrical power management resulted in a CH{sub 4} sensor with a small footprint (32 × 20 × 17 cm{sup 3}) and low-power consumption (6 W). Polynomial and least-squares fit algorithms are employed to remove the baseline of the spectral scan and retrieve CH{sub 4} concentrations, respectively. An Allan-Werle deviation analysis shows that the measurement precision can reach 1.4 ppb for amore » 60 s averaging time. Continuous measurements covering a seven-day period were performed to demonstrate the stability and robustness of the reported CH{sub 4} sensor system.« less

Multi-species trace gas sensing with dual-wavelength QCLs

NASA Astrophysics Data System (ADS)

Hundt, P. Morten; Tuzson, Béla; Aseev, Oleg; Liu, Chang; Scheidegger, Philipp; Looser, Herbert; Kapsalidis, Filippos; Shahmohammadi, Mehran; Faist, Jérôme; Emmenegger, Lukas

2018-06-01

Instrumentation for environmental monitoring of gaseous pollutants and greenhouse gases tends to be complex, expensive, and energy demanding, because every compound measured relies on a specific analytical technique. This work demonstrates an alternative approach based on mid-infrared laser absorption spectroscopy with dual-wavelength quantum cascade lasers (QCLs). The combination of two dual- and one single-DFB QCL yields high-precision measurements of CO (0.08 ppb), CO2 (100 ppb), NH3 (0.02 ppb), NO (0.4 ppb), NO2 (0.1 ppb), N2O (0.045 ppb), and O3 (0.11 ppb) simultaneously in a compact setup (45 × 45 cm2). The lasers are driven time-multiplexed in intermittent continuous wave mode with a repetition rate of 1 kHz. The individual spectra are real-time averaged (1 s) by an FPGA-based data acquisition system. The instrument was assessed for environmental monitoring and benchmarked with reference instrumentation to demonstrate its potential for compact multi-species trace gas sensing.

Accuracy of Petermann's K-factor in the theory of semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

El Mashade, M.B.; Arnaud, J.

1986-04-01

Petermann has proposed that the classical formula for the linewidth of a laser be multiplied by a factor K >> 1 in the case of gain-guided semiconductor lasers. The concept of power in the mode used by that author, however, is not well defined in a waveguide with gain, and his theory is therefore opened to question. The analysis given here avoids this difficulty and nevertheless agrees with Petermann's result. This is because spatial mode filtering is strong in oscillating lasers.

Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kostin, Yu O; Lobintsov, A A; Shramenko, M V

2015-08-31

We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from 880 to 1010 nm, 20 mW of cw output power, and a tuning rate up to 10{sup 4} nm s{sup -1} at an instantaneous spectral linewidth less than 0.1 nm. (lasers)

Stable CW Single Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

NASA Technical Reports Server (NTRS)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by tWo methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback'. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.

Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

NASA Technical Reports Server (NTRS)

Duerksen, Gary L.; Krainak, Michael A.

1998-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings (FBG) has been achieved by two methods: (1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element; (2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

PubMed

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Real Time Imaging Analysis Using a Terahertz Quantum Cascade Laser and a Microbolometer Focal Plane Array

DTIC Science & Technology

2008-12-01

evident from Figure 7 that, if the applied bias is not correct, it is very likely that electrons will not tunnel into their intended energy state...the theoretical laser contrasts sharply to that of semiconductor lasers. Semiconductor lasers rely on electron hole recombination or interband ...the active layer of a forward- biased pn junction [26]. In contrast to this, the QCL is a unipolar device that uses a quantum well (QW) structure

Experimental study on rat NK cell activity improvement by laser acupoint irradiation

NASA Astrophysics Data System (ADS)

Yang, Dongxiao; Chen, Xiufeng; Ruan, Buqing; Yang, Feng

1998-08-01

To study the improvement of the natural killer (NK) cell activity by semiconductor laser acupoint irradiation, rats were used in this experiment and were injected immunosuppressant in their abdomen. The immunoassay was made after the surface irradiation and inner irradiation at Baihui point by semiconductor laser. The NK cell activity is an important index of immunologic function. The results showed that the NK cell activity after laser acupoint irradiation was enhanced. This enhancement is relatively important in the clinical therapy of tumor.

Digital optical signal processing with polarization-bistable semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jai-Ming Liu,; Ying-Chin Chen,

1985-04-01

The operations of a complete set of optical AND, NAND, OR, and NOR gates and clocked optical S-R, D, J-K, and T flip-flops are demonstrated, based on direct polarization switching and polarization bistability, which we have recently observed in InGaAsP/InP semiconductor lasers. By operating the laser in the direct-polarizationswitchable mode, the output of the laser can be directly switched between the TM00 and TE00 modes with high extinction ratios by changing the injection-current level, and optical logic gates are constructed with two optoelectronic switches or photodetectors. In the polarization-bistable mode, the laser exhibits controllable hysteresis loops in the polarization-resolved powermore » versus current characteristics. When the laser is biased in the middle of the hysteresis loop, the light output can be switched between the two polarization states by injection of short electrical or optical pulses, and clocked optical flip-flops are constructed with a few optoelectronic switches and/or photodetectors. The 1 and 0 states of these devices are defined through polarization changes of the laser and direct complement functions are obtainable from the TE and TM output signals from the same laser. Switching of the polarization-bistable lasers with fast-rising current pulses has an instrument-limited mode-switching time on the order of 1 ns. With fast optoelectronic switches and/or fast photodetectors, the overall switching speed of the logic gates and flip-flops is limited by the polarizationbistable laser to <1 ns. We have demonstrated the operations of these devices using optical signals generated by semiconductor lasers. The proposed schemes of our devices are compatible with monolithic integration based on current fabrication technology and are applicable to other types of bistable semiconductor lasers.« less

Quantum weak turbulence with applications to semiconductor lasers

NASA Astrophysics Data System (ADS)

Lvov, Yuri Victorovich

Based on a model Hamiltonian appropriate for the description of fermionic systems such as semiconductor lasers, we describe a natural asymptotic closure of the BBGKY hierarchy in complete analogy with that derived for classical weak turbulence. The main features of the interaction Hamiltonian are the inclusion of full Fermi statistics containing Pauli blocking and a simple, phenomenological, uniformly weak two particle interaction potential equivalent to the static screening approximation. The resulting asymytotic closure and quantum kinetic Boltzmann equation are derived in a self consistent manner without resorting to a priori statistical hypotheses or cumulant discard assumptions. We find a new class of solutions to the quantum kinetic equation which are analogous to the Kolmogorov spectra of hydrodynamics and classical weak turbulence. They involve finite fluxes of particles and energy across momentum space and are particularly relevant for describing the behavior of systems containing sources and sinks. We explore these solutions by using differential approximation to collision integral. We make a prima facie case that these finite flux solutions can be important in the context of semiconductor lasers. We show that semiconductor laser output efficiency can be improved by exciting these finite flux solutions. Numerical simulations of the semiconductor Maxwell Bloch equations support the claim.

1.25-3.125 Gb/s per user PON with RSOA as phase modulator for statistical wavelength ONU

NASA Astrophysics Data System (ADS)

Chu, Guang Yong; Polo, Victor; Lerín, Adolfo; Tabares, Jeison; Cano, Iván N.; Prat, Josep

2015-12-01

We report a new scheme to support, cost efficiently, ultra-dense wavelength division multiplexing (UDWDM) for optical access networks. As validating experiment, we apply phase modulation of a reflective semiconductor optical amplifier (RSOA) at the ONU with a single DFB, and simplified coherent receiver at OLT for upstream. We extend the limited 3-dB modulation bandwidth of available uncooled To-can packaged RSOA (~400 MHz) and operate it at 3.125 Gb/s with the optimal performance for phase modulation using small and large signal measurement characteristics. The optimal condition is selected at input power of 0 dBm, with 70 mA bias condition. The sensitivities at 3.125 Gb/s (at BER=10-3) for heterodyne and intradyne detection reach -34.3 dBm and -38.8 dBm, respectively.

The use of mHealth to deliver tailored messages reduces reported energy and fat intake

PubMed Central

Ambeba, Erica J.; Ye, Lei; Sereika, Susan M.; Styn, Mindi A.; Acharya, Sushama D.; Sevick, Mary Ann; Ewing, Linda J.; Conroy, Molly B.; Glanz, Karen; Zheng, Yaguang; Goode, Rachel W.; Mattos, Meghan; Burke, Lora E.

2016-01-01

Background Evidence supports the role of feedback in reinforcing motivation for behavior change. Feedback that provides reinforcement has the potential to increase dietary self-monitoring and enhance attainment of recommended dietary intake. Objective To examine the impact of daily feedback (DFB) messages, delivered remotely, on changes in dietary intake. Methods A secondary analysis of the SMART trial, a single-center, 24-month randomized clinical trial of behavioral treatment for weight loss. Participants included 210 obese adults (mean body mass index=34.0 kg/m2) who were randomized to either a paper diary (PD), personal digital assistant (PDA), or PDA plus daily, tailored feedback messages (PDA+FB). To determine the role of daily tailored feedback in dietary intake, we compared the self-monitoring with daily feedback group (DFB, n=70) to the self-monitoring without daily feedback group (No-DFB, n=140). All participants received a standard behavioral intervention for weight loss. Self-reported changes in dietary intake were compared between the DFB and No-DFB groups and were measured at baseline, 6, 12, 18, and 24 months. Linear mixed modeling was used to examine percent changes in dietary intake from baseline. Results Compared to the No-DFB group, the DFB group achieved a larger reduction in energy (−22.8% vs. −14.0%, p=0.02) and saturated fat (−11.3% vs. −0.5%, p=0.03) intake, and a trend toward a greater decrease in total fat intake (−10.4% vs. −4.7%, p=0.09). There were significant improvements over time in carbohydrate intake and total fat intake for both groups (p’s<0.05). Conclusion Daily, tailored feedback messages, designed to target energy and fat intake and delivered remotely in real-time using mobile devices, may play an important role in the reduction of energy and fat intake. PMID:24434827

Spontaneous emission in semiconductor laser amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arnaud, J.; Coste, F.; Fesqueet, J.

1985-06-01

In a mode matched configuration, spontaneous emission in semiconductor laser amplifiers is enhanced by a factor which is larger than unity but which is significantly smaller than the K-factor calculated by Petermann. Using thin-slab model, we find that in typical situations, the factor is about K/2.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: High-frequency impedance and spontaneous carrier lifetime in narrow-stripe semiconductor injection lasers

NASA Astrophysics Data System (ADS)

Hoernlein, W.

1988-11-01

Measurements were made of the complex reflection coefficient of hf (10-400 MHz) signals from semiconductor injection lasers supplied with a direct bias current ranging from several milliamperes up to the threshold value or higher. The hf impedance was calculated. The parameters of the equivalent electrical circuit made it possible to predict the modulation characteristics. The impedance corresponding to currents below the lasing threshold was used to find the differential carrier lifetime from the RC constant of the p-n junction of a laser diode. A description of the apparatus is supplemented by an account of the method used in calculation of the electrical parameters and carrier lifetimes. The first results obtained using this apparatus and method are reported.

Beam collimation and focusing and error analysis of LD and fiber coupling system based on ZEMAX

NASA Astrophysics Data System (ADS)

Qiao, Lvlin; Zhou, Dejian; Xiao, Lei

2017-10-01

Laser diodde has many advantages, such as high efficiency, small volume, low cost and easy integration, so it is widely used. Because of its poor beam quality, the application of semiconductor laser has also been seriously hampered. In view of the poor beam quality, the ZEMAX optical design software is used to simulate the far field characteristics of the semiconductor laser beam, and the coupling module of the semiconductor laser and the optical fiber is designed and optimized. And the beam is coupled into the fiber core diameter d=200µm, the numerical aperture NA=0.22 optical fiber, the output power can reach 95%. Finally, the influence of the three docking errors on the coupling efficiency during the installation process is analyzed.

Semiconductor laser devices having lateral refractive index tailoring

DOEpatents

Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1990-01-01

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Dynamics of a multimode semiconductor laser with optical feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koryukin, I. V.

A new model of a multi-longitudinal-mode semiconductor laser with weak optical feedback is proposed. This model generalizes the well-known Tang-Statz-deMars equations, which are derived from the first principles and adequately describe solid-state lasers to a semiconductor active medium. Steady states of the model and the spectrum of relaxation oscillations are found, and the laser dynamics in the chaotic regime of low-frequency fluctuations of intensity is investigated. It is established that the dynamic properties of the proposed model depend mainly on the carrier diffusion, which controls mode-mode coupling in the active medium via spread of gratings of spatial inversion. The resultsmore » obtained are compared with the predictions of previous semiphenomenological models and the scope of applicability of these models is determined.« less

Semiconductor cylinder fiber laser

NASA Astrophysics Data System (ADS)

Sandupatla, Abhinay; Flattery, James; Kornreich, Philipp

2015-12-01

We fabricated a fiber laser that uses a thin semiconductor layer surrounding the glass core as the gain medium. This is a completely new type of laser. The In2Te3 semiconductor layer is about 15-nm thick. The fiber laser has a core diameter of 14.2 μm, an outside diameter of 126 μm, and it is 25-mm long. The laser mirrors consist of a thick vacuum-deposited aluminum layer at one end and a thin semitransparent aluminum layer deposited at the other end of the fiber. The laser is pumped from the side with either light from a halogen tungsten incandescent lamp or a blue light emitting diode flash light. Both the In2Te3 gain medium and the aluminum mirrors have a wide bandwidth. Therefore, the output spectrum consists of a pedestal from a wavelength of about 454 to 623 nm with several peaks. There is a main peak at 545 nm. The main peak has an amplitude of 16.5 dB above the noise level of -73 dB.

Fabrication of metal/semiconductor nanocomposites by selective laser nano-welding.

PubMed

Yu, Huiwu; Li, Xiangyou; Hao, Zhongqi; Xiong, Wei; Guo, Lianbo; Lu, Yongfeng; Yi, Rongxing; Li, Jiaming; Yang, Xinyan; Zeng, Xiaoyan

2017-06-01

A green and simple method to prepare metal/semiconductor nanocomposites by selective laser nano-welding metal and semiconductor nanoparticles was presented, in which the sizes, phases, and morphologies of the components can be maintained. Many types of nanocomposites (such as Ag/TiO 2 , Ag/SnO 2 , Ag/ZnO 2 , Pt/TiO 2 , Pt/SnO 2 , and Pt/ZnO) can be prepared by this method and their corresponding performances were enhanced.

Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

PubMed Central

2011-01-01

On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity. PMID:22060172

Ultralow-jitter and -amplitude-noise semiconductor-based actively mode-locked laser.

PubMed

Quinlan, Franklyn; Gee, Sangyoun; Ozharar, Sarper; Delfyett, Peter J

2006-10-01

We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of relative timing jitter and a 0.0365% amplitude fluctuation (1 Hz to 100 MHz) of the optical pulse train. The keys to obtaining this result were the laser's high optical power and the low phase noise of the rf source used to mode lock the laser. The low phase noise of the rf source not only improves the absolute and relative timing jitter of the laser, but also prevents coupling of the rf source phase noise to the pulse amplitude fluctuations by the mode-locked laser.

Wurtzite Spin-Lasers

NASA Astrophysics Data System (ADS)

Xu, Gaofeng; Faria Junior, Paulo E.; Sipahi, Guilherme M.; Zutic, Igor

Lasers in which spin-polarized carriers are injected provide paths to different practical room temperature spintronic devices, not limited to magnetoresistive effects. While theoretical studies of such spin-lasers have focused on zinc-blende semiconductors as their active regions, the first electrically injected carriers at room temperature were recently demonstrated in GaN-based wurtzite semiconductors, recognized also for the key role as highly-efficient light emitting diodes. By focusing on a wurtzite quantum well-based spin-laser, we use accurate electronic structure calculations to develop a microscopic description for its lasing properties. We discuss important differences between wurtzite and zinc-blende spin-lasers.

Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

DOEpatents

Beach, R.J.; Benett, W.J.; Mills, S.T.

1997-04-01

The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a ``rack and stack`` configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber. 3 figs.

Full duplex dense-wavelength-division-multiplexing radio-over-fiber system transmission of 75-GHz W-band frequency multiple-input multiple-output orthogonal-frequency-division-multiplexing signals with 3×12 Gbps downstream and 6 Gbps upstream

NASA Astrophysics Data System (ADS)

Fang, Wei Jin; Huang, Xu Guang; Yang, Kai; Zhang, Xiao Min

2012-09-01

We propose and demonstrate a full duplex dense-wavelength-division-multiplexing radio-over-fiber (DWDM-ROF) system for transmitting 75-GHz W-band frequency multiple-input multiple-output orthogonal-frequency-division-multiplexing (MIMO-OFDM) signals with 12 Gbps downstream and 6 Gbps upstream. The downstream transmitting terminal is based on a three-channels sextupling-frequency scheme using an external modulation of a distributed feedback laser diode (DFB-LD) and dual drive Mach-Zehnder modulator (DD-MZM) for carrying downstream signals. MIMO-OFDM algorithms effectively compensate for impairments in the wireless link. Without using costly W-band components in the transmitter, a 12 Gbps downstream transmission system operation at 75 GHz is experimentally validated. For the downstream transmission, a power penalty of less than 3 dB was observed after a 50 km single mode fiber (SMF) and 4 m wireless transmission at a bit error rate (BER) of 3.8×10-3. For the upstream transmission, we use a commercially available 1.5 GHz bandwidth reflective semiconductor optical amplifier (RSOA) to achieve 6 Gbps upstream traffic for 16 QAM-OFDM signals. A power penalty of 3 dB was observed after a 50 km SMF transmission at a BER of 3.8×10-3. The frequency of the local oscillator is reduced due to the frequency sextupling scheme. The cost of the proposed system is largely reduced.

High temperature heat source generation with quasi-continuous wave semiconductor lasers at power levels of 6 W for medical use.

PubMed

Fujimoto, Takahiro; Imai, Yusuke; Tei, Kazuyoku; Ito, Shinobu; Kanazawa, Hideko; Yamaguchi, Shigeru

2014-01-01

We investigate a technology to create a high temperature heat source on the tip surface of the glass fiber proposed for medical surgery applications. Using 4 to 6 W power level semiconductor lasers at a wavelength of 980 nm, a laser coupled fiber tip was preprocessed to contain a certain amount of titanium oxide powder with a depth of 100 μm from the tip surface so that the irradiated low laser energy could be perfectly absorbed to be transferred to thermal energy. Thus, the laser treatment can be performed without suffering from any optical characteristic of the material. A semiconductor laser was operated quasi-continuous wave mode pulse time duration of 180 ms and >95% of the laser energy was converted to thermal energy in the fiber tip. Based on two-color thermometry, by using a gated optical multichannel analyzer with a 0.25 m spectrometer in visible wavelength region, the temperature of the fiber tip was analyzed. The temperature of the heat source was measured to be in excess 3100 K.

Development a low-cost carbon monoxide sensor using homemade CW-DFB QCL and board-level electronics

NASA Astrophysics Data System (ADS)

Dang, Jingmin; Yu, Haiye; Zheng, Chuantao; Wang, Lijun; Sui, Yuanyuan; Wang, Yiding

2018-05-01

A mid-infrared sensor was demonstrated for the detection of carbon monoxide (CO) at trace level. In order to reduce cost, a homemade continuous-wave mode distributed feedback quantum cascade laser (CW-DFB QCL), a mini gas cell with 1.6-m optical length, and some self-development electronic modules were adopted as excitation source, absorption pool, and signal controlling and processing tool, respectively. Wavelength modulation spectroscopy (WMS) and phase sensitive detection (PSD) techniques as well as wavelet filtering software algorithm were used to reduce the influence of light source fluctuation and system noise and to improve measurement precision and sensitivity. Under the selected P(11) absorption line located at 2099.083 cm-1, a limit of detection (LoD) of 26 parts per billion by volume (ppbv) at atmospheric pressure was achieved with a 1-s acquisition time. Allan deviation was used to characterize the long-term performance of the CO sensor, and a measurement precision of ∼3.4 ppbv was observed with an optimal integration time of ∼114 s. As a field measurement, a continuous monitoring on indoor CO concentration for a period of 24 h was conducted, which verified the reliable and robust operation of the developed sensor.

Plasma Heating and Ultrafast Semiconductor Laser Modulation Through a Terahertz Heating Field

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Ning, C. Z.

2000-01-01

Electron-hole plasma heating and ultrafast modulation in a semiconductor laser under a terahertz electrical field are investigated using a set of hydrodynamic equations derived from the semiconductor Bloch equations. The self-consistent treatment of lasing and heating processes leads to the prediction of a strong saturation and degradation of modulation depth even at moderate terahertz field intensity. This saturation places a severe limit to bandwidth achievable with such scheme in ultrafast modulation. Strategies for increasing modulation depth are discussed.

Laser-based sensor for a coolant leak detection in a nuclear reactor

NASA Astrophysics Data System (ADS)

Kim, T.-S.; Park, H.; Ko, K.; Lim, G.; Cha, Y.-H.; Han, J.; Jeong, D.-Y.

2010-08-01

Currently, the nuclear industry needs strongly a reliable detection system to continuously monitor a coolant leak during a normal operation of reactors for the ensurance of nuclear safety. In this work, we propose a new device for the coolant leak detection based on tunable diode laser spectroscopy (TDLS) by using a compact diode laser. For the feasibility experiment, we established an experimental setup consisted of a near-IR diode laser with a wavelength of about 1392 nm, a home-made multi-pass cell and a sample injection system. The feasibility test was performed for the detection of the heavy water (D2O) leaks which can happen in a pressurized heavy water reactor (PWHR). As a result, the device based on the TDLS is shown to be operated successfully in detecting a HDO molecule, which is generated from the leaked heavy water by an isotope exchange reaction between D2O and H2O. Additionally, it is suggested that the performance of the new device, such as sensitivity and stability, can be improved by adapting a cavity enhanced absorption spectroscopy and a compact DFB diode laser. We presume that this laser-based leak detector has several advantages over the conventional techniques currently employed in the nuclear power plant, such as radiation monitoring, humidity monitoring and FT-IR spectroscopy.

Thermal investigation on high power dfb broad area lasers at 975 nm, with 60% efficiency

NASA Astrophysics Data System (ADS)

Mostallino, R.; Garcia, M.; Deshayes, Y.; Larrue, A.; Robert, Y.; Vinet, E.; Bechou, L.; Lecomte, M.; Parillaud, O.; Krakowski, M.

2016-03-01

The demand of high power diode lasers in the range of 910-980nm is regularly growing. This kind of device for many applications, such as fiber laser pumping [1], material processing [1], solid-state laser pumping [1], defense and medical/dental. The key role of this device lies in the efficiency (𝜂𝐸) of converting input electrical power into output optical power. The high value of 𝜂𝐸 allows high power level and reduces the need in heat dissipation. The requirement of wavelength stabilization with temperature is more obvious in the case of multimode 975nm diode lasers used for pumping Yb, Er and Yb/Er co-doped solid-state lasers, due to the narrow absorption line close to this wavelength. Such spectral width property (<1 nm), combined with wavelength thermal stabilization (0.07 𝑛𝑚 • °𝐶-1), provided by a uniform distributed feedback grating (DFB) introduced by etching and re-growth process techniques, is achievable in high power diode lasers using optical feedback. This paper reports on the development of the diode laser structure and the process techniques required to write the gratings taking into account of the thermal dissipation and optical performances. Performances are particularly determined in terms of experimental electro-optical characterizations. One of the main objectives is to determine the thermal resistance of the complete assembly to ensure the mastering of the diode laser temperature for operating condition. The classical approach to determine junction temperature is based on the infrared thermal camera, the spectral measurement and the pulse electrical method. In our case, we base our measurement on the spectral measurement but this approach is not well adapted to the high power diodes laser studied. We develop a new measurement based on the pulse electrical method and using the T3STERequipment. This method is well known for electronic devices and LEDs but is weakly developed for the high power diodes laser. This crucial measurement compared to spectral one is critical for understand the thermal management of diode laser device and improve the structure based on design for reliability. To have a perfect relation between structure, and their modification, and temperature, FEM simulations are performed using COMSOL software. In this case, we can understand the impact of structure on the isothermal distribution and then reveal the sensitive zones in the diode laser. To validate the simulation, we compare the simulation results to the experimental one and develop an analytical model to determine the different contributions of the thermal heating. This paper reports on the development laser structure and the process techniques required to write the gratings. Performances are particularly characterized in terms of experimental electro-optical characterization and spectral response. The extraction of thermal resistance (Rth) is particularly difficult, because of the implicit low value (Rth ≈ 2𝐾/𝑊) and the multimodal nature of the diode laser. In such a context, thermal resistance has been measured using a dedicated equipment namely T3STER©. The results have been compared with those given by the well-known technique achieved from the spectrum of the diode laser (central wavelength variations vs temperature) that is more difficult to apply for multimodal diodes laser. The last section deals with thermal simulations based on finite elements method (FEM) modeling in order to estimate junction temperature . This study represent a significant part of the general Design for Reliability (DfR) effort carried out on such devices to produce efficient and reliable high power devices at the industrial level.

IV INTERNATIONAL CONFERENCE ON ATOM AND MOLECULAR PULSED LASERS (AMPL'99): Efficient long-pulse XeCl laser with a prepulse formed by an inductive energy storage device

NASA Astrophysics Data System (ADS)

Baksht, E. Kh; Panchenko, Aleksei N.; Tarasenko, Viktor F.

2000-06-01

An efficient electric-discharge XeCl laser is developed, which is pumped by a self-sustained discharge with a prepulse formed by a generator with an inductive energy storage device and a semiconductor current interrupter on a basis of semiconductor opening switch (SOS) diodes. An output energy up to 800 mJ, a pulse length up to 450 ns, and a total laser efficiency of 2.2% were attained by using spark UV preionisation.

Saturable nonlinear dielectric waveguide with applications to broad-area semiconductor lasers.

PubMed

Mehuys, D; Mittelstein, M; Salzman, J; Yariv, A

1987-11-01

Self-focusing in a passive dielectric waveguide with a saturable nonlinearity is studied. The eigensolutions constitute a good approximation to the lateral modes of broad-area semiconductor lasers under low-duty-cycle pulsed conditions. The laser modes are predicted to consist of adjacent filaments coupled in phase, leading to a single-lobed far field, and to be stable with increased current injection above saturation intensity. The ultimate filament spacing is inversely proportional to the threshold gain, and thus wider filaments are expected in low-threshold broad-area lasers.

Widely tunable semiconductor lasers with three interferometric arms.

PubMed

Su, Guan-Lin; Wu, Ming C

2017-09-04

We present a comprehensive study for a new three-branch widely tunable semiconductor laser based on a self-imaging, lossless multi-mode interference (MMI) coupler. We have developed a general theoretical framework that is applicable to all types of interferometric lasers. Our analysis showed that the three-branch laser offers high side-mode suppression ratios (SMSRs) while maintaining a wide tuning range and a low threshold modal gain of the lasing mode. We also present the design rules for tuning over the dense-wavelength division multiplexing grid over the C-band.

Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating.

PubMed

Rickey, Kelly M; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S Venkataprasad; Wu, Yue; Cheng, Gary J; Ruan, Xiulin

2015-11-03

We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~10(5) Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

PubMed Central

Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin

2015-01-01

We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films. PMID:26527570

Semiconductor lasers vs LEDs in diagnostic and therapeutic medicine

NASA Astrophysics Data System (ADS)

Gryko, Lukasz; Zajac, Andrzej; Szymanska, Justyna; Blaszczak, Urszula; Palkowska, Anna; Kulesza, Ewa

2016-12-01

Semiconductor emitters are used in many areas of medicine, allowing for new methods of diagnosis, treatment and effective prevention of many diseases. The article presents selected areas of application of semiconductor sources in UVVIS- NIR range, where in recent years competition in semiconductor lasers and LEDs applications has been observed. Examples of applications of analyzed sources are indicated for LLLT, PDT and optical diagnostics using the procedure of color contrast. Selected results of LLLT research of the authors are presented that were obtained by means of the developed optoelectronic system for objectified irradiation and studies on the impact of low-energy laser and LED on lines of endothelial cells of umbilical vein. Usefulness of the spectrally tunable LED lighting system for diagnostic purposes is also demonstrated, also as an illuminator for surface applications - in procedure of variable color contrast of the illuminated object.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, Kevin L.

The purpose of this LDRD project was to demonstrate high spatial and temporal resolution x-ray imaging using optical detectors, and in particular the VISAR and OHRV diagnostics on the OMEGA laser. The x-ray source being imaged was a backlighter capsule being imploded by 39 beams of the OMEGA laser. In particular this approach utilized a semiconductor with the side facing the backlighter capsule coated with a thin aluminum layer to allow x rays to pass through the metal layer and then get absorbed in the semiconductor. The other side of the semiconductor was AR coated to allow the VISAR ormore » OHRV probe beam to sample the phase change of the semiconductor as the x rays were absorbed in the semiconductor. This technique is capable of acquiring sub-picosecond 2-D or 1-D x-ray images, detector spatial resolution of better than 10 um and the ability to operate in a high neutron flux environment expected on ignition shots with burning plasmas. In addition to demonstrating this technique on the OMEGA laser, several designs were made to improve the phase sensitivity, temporal resolution and number of frames over the existing diagnostics currently implemented on the OMEGA laser. These designs included both 2-d imaging diagnostics as well as improved 1-D imaging diagnostics which were streaked in time.« less

Bibliography of Soviet Laser Developments, Number 40, March - April 1979.

DTIC Science & Technology

1979-11-27

6. Semiconductor: Heterojunction 7. Semiconductor: Theory ......................... 3 8. Glass : Nd ..................................... 4...9. Glass : Miscellaneous...........................4 B. Liquid Lasers 1. Organic Dyes a. Rhodamine .................................. 5 b...1979, 603-604. 8. Glass : Nd 22. Gvatua, Sh.Sh., E.V. Katselashvili, V.A. Khanevichev, D.K. Khotelashvili, and V.S. Chagulov (39). Substructure of high

Rare resource supply crisis and solution technology for semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Fukuda, Hitomi; Hu, Sophia; Yoo, Youngsun; Takahisa, Kenji; Enami, Tatsuo

2016-03-01

There are growing concerns over future environmental impact and earth resource shortage throughout the world and in many industries. Our semiconductor industry is not excluded. "Green" has become an important topic as production volume become larger and more powerful. Especially, the rare gases are widely used in semiconductor manufacturing because of its inertness and extreme chemical stability. One major component of an Excimer laser system is Neon. It is used as a buffer gas for Argon (Ar) and Krypton (Kr) gases used in deep ultraviolet (DUV) lithography laser systems. Since Neon gas accounting for more than 96% of the laser gas mixture, a fairly large amount of neon gas is consumed to run these DUV lasers. However, due to country's instability both in politics and economics in Ukraine, the main producer of neon gas today, supply reduction has become an issue and is causing increasing concern. This concern is not only based on price increases, but has escalated to the point of supply shortages in 2015. This poses a critical situation for the semiconductor industry, which represents the leading consumer of neon gas in the world. Helium is another noble gas used for Excimer laser operation. It is used as a purge gas for optical component modules to prevent from being damaged by active gases and impurities. Helium has been used in various industries, including for medical equipment, linear motor cars, and semiconductors, and is indispensable for modern life. But consumption of helium in manufacturing has been increased dramatically, and its unstable supply and price rise has been a serious issue today. In this article, recent global supply issue of rare resources, especially Neon gas and Helium gas, and its solution technology to support semiconductor industry will be discussed.

Laser warning receiver to identify the wavelength and angle of arrival of incident laser light

DOEpatents

Sinclair; Michael B.; Sweatt, William C.

2010-03-23

A laser warning receiver is disclosed which has up to hundreds of individual optical channels each optically oriented to receive laser light from a different angle of arrival. Each optical channel has an optical wedge to define the angle of arrival, and a lens to focus the laser light onto a multi-wavelength photodetector for that channel. Each multi-wavelength photodetector has a number of semiconductor layers which are located in a multi-dielectric stack that concentrates the laser light into one of the semiconductor layers according to wavelength. An electrical signal from the multi-wavelength photodetector can be processed to determine both the angle of arrival and the wavelength of the laser light.

Terahertz transmission properties of silicon wafers using continuous-wave terahertz spectroscopy

NASA Astrophysics Data System (ADS)

Kim, Chihoon; Ahn, Jae Sung; Ji, Taeksoo; Eom, Joo Beom

2017-04-01

We present the spectral properties of Si wafers using continuous-wave terahertz (CW-THz) spectroscopy. By using a tunable laser source and a fixed distributed-feedback laser diode (DFB-LD), a stably tunable beat source for CW-THz spectroscopy system can be implemented. THz radiation is generated in the frequency range of 100 GHz-800 GHz by photomixing in a photoconductive antenna. We also measured CW-THz waveforms by changing the beat frequency and confirmed repeatability through repeated measurement. We calculated the peaks of the THz frequency by taking fast Fourier transforms (FFTs) of measured THz waveforms. The feasibility of CW-THz spectroscopy is demonstrated by the THz spectra of Si wafers with different resistivities, mobilities, and carrier concentrations. The results show that Si wafers with a lower resistivity absorb more THz waves. Thus, we expect our CW-THz system to have the advantage of being able to perform fast non-destructive analysis.

Dual quantum cascade laser-based sensor for simultaneous NO and NO2 detection using a wavelength modulation-division multiplexing technique

NASA Astrophysics Data System (ADS)

Yu, Yajun; Sanchez, Nancy P.; Yi, Fan; Zheng, Chuantao; Ye, Weilin; Wu, Hongpeng; Griffin, Robert J.; Tittel, Frank K.

2017-05-01

A sensor system capable of simultaneous measurements of NO and NO2 was developed using a wavelength modulation-division multiplexing (WMDM) scheme and multi-pass absorption spectroscopy. A continuous wave (CW), distributed-feedback (DFB) quantum cascade laser (QCL) and a CW external-cavity (EC) QCL were employed for targeting a NO absorption doublet at 1900.075 cm-1 and a NO2 absorption line at 1630.33 cm-1, respectively. Simultaneous detection was realized by modulating both QCLs independently at different frequencies and demodulating the detector signals with LabView-programmed lock-in amplifiers. The sensor operated at a reduced pressure of 40 Torr and a data sampling rate of 1 Hz. An Allan-Werle deviation analysis indicated that the minimum detection limits of NO and NO2 can reach sub-ppbv concentration levels with averaging times of 100 and 200 s, respectively.

Semiconductor laser irradiation improves root canal sealing during routine root canal therapy

PubMed Central

Hu, Xingxue; Wang, Dashan; Cui, Ting; Yao, Ruyong

2017-01-01

Objective To evaluate the effect of semiconductor laser irradiation on root canal sealing after routine root canal therapy (RCT). Methods Sixty freshly extracted single-rooted human teeth were randomly divided into six groups (n = 10). The anatomic crowns were sectioned at the cementoenamel junction and the remaining roots were prepared endodontically with conventional RCT methods. Groups A and B were irradiated with semiconductor laser at 1W for 20 seconds; Groups C and D were ultrasonically rinsed for 60 seconds as positive control groups; Groups E and F without treatment of root canal prior to RCT as negative control groups. Root canal sealing of Groups A, C and E were evaluated by measurements of apical microleakage. The teeth from Groups B, D and F were sectioned, and the micro-structures were examined with scanning electron microscopy (SEM). One way ANOVA and LSD-t test were used for statistical analysis (α = .05). Results The apical sealing of both the laser irradiated group and the ultrasonic irrigated group were significantly different from the control group (p<0.5). There was no significant difference between the laser irradiated group and the ultrasonic irrigated group (p>0.5). SEM observation showed that most of the dentinal tubules in the laser irradiation group melted, narrowed or closed, while most of the dentinal tubules in the ultrasonic irrigation group were filled with tooth paste. Conclusion The application of semiconductor laser prior to root canal obturation increases the apical sealing of the roots treated. PMID:28957407

Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

NASA Astrophysics Data System (ADS)

Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

2016-03-01

We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

Dispersion of TE modes in slab waveguides with reference to double heterostructure semiconductor lasers

NASA Astrophysics Data System (ADS)

Buus, J.

1980-06-01

The group index for TE modes in an asymmetrical slab waveguide is investigated, and a simple analytical expression is derived. It is shown that the product of the phase and group indices is related to the power fraction in each of the three layers of the waveguide. The results are of interest in the analysis of double heterostructure semiconductor lasers. Theoretical and experimental results for lasers emitting at 1.55 microns are compared.

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

NASA Astrophysics Data System (ADS)

Hansen, A. K.; Christensen, M.; Noordegraaf, D.; Heist, P.; Papastathopoulos, E.; Loyo-Maldonado, V.; Jensen, O. B.; Stock, M. L.; Skovgaard, P. M. W.

2017-02-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers.

PubMed

Chen, Shaoqiang; Diao, Shengxi; Li, Pengtao; Nakamura, Takahiro; Yoshita, Masahiro; Weng, Guoen; Hu, Xiaobo; Shi, Yanling; Liu, Yiqing; Akiyama, Hidefumi

2017-07-31

High power pulsed lasers with tunable pulse widths are highly favored in many applications. When combined with power amplification, gain-switched semiconductor lasers driven by broadband tunable electric pulsers can meet such requirements. For this reason, we designed and produced a low-cost integrated CMOS pulse generator with a minimum pulse width of 80 ps and a wide tuning range of up to 270 ns using a 40-nm microelectronic process technique. We used this pulser to drive a 1.3-µm semiconductor laser diode directly, and thereafter investigated the gain-switching properties of the laser system. The optical pulses consist of a spike followed by a steady state region. Tuning the width of the electrical pulse down to approximately 1.5 ns produces optical pulses consisting only of the spike, which has a minimum pulse-width of 100 ps. Moreover, the duration of the steady state can be tuned continuously by tuning the electrical pulse width, with a peak power of approximately 5 mW. The output voltage of the electric pulser has a tuning range of 0.8-1.5 V that can be used to directly drive semiconductor laser diodes with wavelengths in the near-infrared spectrum, which are suitable for power amplification with rare-earth doped fiber amplifiers.

Delay induced high order locking effects in semiconductor lasers

NASA Astrophysics Data System (ADS)

Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Delay induced high order locking effects in semiconductor lasers.

PubMed

Kelleher, B; Wishon, M J; Locquet, A; Goulding, D; Tykalewicz, B; Huyet, G; Viktorov, E A

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types--a quantum dot based device and a quantum well based device-are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Reliability of Semiconductor Laser Packaging in Space Applications

NASA Technical Reports Server (NTRS)

Gontijo, Ivair; Qiu, Yueming; Shapiro, Andrew A.

2008-01-01

A typical set up used to perform lifetime tests of packaged, fiber pigtailed semiconductor lasers is described, as well as tests performed on a set of four pump lasers. It was found that two lasers failed after 3200, and 6100 hours under device specified bias conditions at elevated temperatures. Failure analysis of the lasers indicates imperfections and carbon contamination of the laser metallization, possibly from improperly cleaned photo resist. SEM imaging of the front facet of one of the lasers, although of poor quality due to the optical fiber charging effects, shows evidence of catastrophic damage at the facet. More stringent manufacturing controls with 100% visual inspection of laser chips are needed to prevent imperfect lasers from proceeding to packaging and ending up in space applications, where failure can result in the loss of a space flight mission.

Review on the dynamics of semiconductor nanowire lasers

NASA Astrophysics Data System (ADS)

Röder, Robert; Ronning, Carsten

2018-03-01

Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, R.P. Jr.; Crawford, M.H.

1996-09-17

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

Quantum weak turbulence with applications to semiconductor lasers

NASA Astrophysics Data System (ADS)

Lvov, Y. V.; Binder, R.; Newell, A. C.

1998-10-01

Based on a model Hamiltonian appropriate for the description of fermionic systems such as semiconductor lasers, we describe a natural asymptotic closure of the BBGKY hierarchy in complete analogy with that derived for classical weak turbulence. The main features of the interaction Hamiltonian are the inclusion of full Fermi statistics containing Pauli blocking and a simple, phenomenological, uniformly weak two-particle interaction potential equivalent to the static screening approximation. We find a new class of solutions to the quantum kinetic equation which are analogous to the Kolmogorov spectra of hydrodynamics and classical weak turbulence. They involve finite fluxes of particles and energy in momentum space and are particularly relevant for describing the behavior of systems containing sources and sinks. We make a prima facie case that these finite flux solutions can be important in the context of semiconductor lasers and show how they might be used to enhance laser performance.

Wavelength-resonant surface-emitting semiconductor laser

DOEpatents

Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

1989-01-01

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

Strong light illumination on gain-switched semiconductor lasers helps the eavesdropper in practical quantum key distribution systems

NASA Astrophysics Data System (ADS)

Fei, Yang-yang; Meng, Xiang-dong; Gao, Ming; Yang, Yi; Wang, Hong; Ma, Zhi

2018-07-01

The temperature of the semiconductor diode increases under strong light illumination whether thermoelectric cooler is installed or not, which changes the output wavelength of the laser (Lee et al., 2017). However, other characteristics also vary as temperature increases. These variations may help the eavesdropper in practical quantum key distribution systems. We study the effects of temperature increase on gain-switched semiconductor lasers by simulating temperature dependent rate equations. The results show that temperature increase may cause large intensity fluctuation, decrease the output intensity and lead the signal state and decoy state distinguishable. We also propose a modified photon number splitting attack by exploiting the effects of temperature increase. Countermeasures are also proposed.

Broader, flatter optical spectra of passively mode-locked semiconductor lasers for a wavelength-division multiplexing source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eliyahu, Danny; Yariv, Amnon

1997-05-01

Using the time domain master equation for a complex electric-field pulse envelope, we find analytical results for the optical spectra of passively mode-locked semiconductor lasers. The analysis includes the effect of optical nonlinearity of semiconductor lasers, which is characterized by a slow saturable amplifier and absorber. Group velocity dispersion, bandwidth limiting, and self-phase modulation were considered as well. The FWHM of the spectrum profile was found to have a strong dependence on group velocity dispersion and self-phase modulation. For large absolute values of the chirp parameter, the optical spectra result in equispaced continuous wave frequencies, a large fraction of whichmore » have equal power. {copyright} 1997 Optical Society of America« less

Semiconductor Microcavity Flow Spectroscopy of Intracellular Protein in Human Cells

NASA Astrophysics Data System (ADS)

Gourley, Paul; Cox, Jim; Hendricks, Judy; McDonald, Anthony; Copeland, Guild; Sasaki, Darryl; Skirboll, Steve; Curry, Mark

2001-03-01

The speed of light through a biofluid or biological cell is inversely related to the biomolecular concentration of proteins and other complex molecules that modify the refractive index at wavelengths accessible to semiconductor lasers. By placing a fluid or cell into a semiconductor microcavity laser, these decreases in light speed can be sensitively recorded in picoseconds as frequency red-shifts in the laser output spectrum. This biocavity laser equipped with microfluidics for transporting cells at high speed through the laser microcavity has shown potential for rapid analysis of biomolecular mass of normal and malignant human cells in their physiologic condition without time-consuming fixing, staining, or tagging. We have used biocavity laser spectroscopy to measure the optical properties of solutions of standard biomolecules (sugars, proteins, DNA, and ions) and human cells. The technique determines the frequency shift, relative to that of water, of spontaneous or stimulated emission from cavity filled with a biomolecular solution. The shift was also measured in human glioblastoma cells that had been sorted by conventional fluorescence-activated cell sorting according to protein content. The results show a direct correlation between protein measured by fluorescence and the frequency shift observed in the microcavity laser.

Quantum cascade lasers (QCL) for active hyperspectral imaging

NASA Astrophysics Data System (ADS)

Yang, Quankui; Fuchs, Frank; Wagner, Joachim

2014-04-01

There is an increasing demand for wavelength agile laser sources covering the mid-infrared (MIR, 3.5-12 µm) wavelength range, among others in active imaging. The MIR range comprises a particularly interesting part of the electromagnetic spectrum for active hyperspectral imaging applications, due to the fact that the characteristic `fingerprint' absorption spectra of many chemical compounds lie in that range. Conventional semiconductor diode laser technology runs out of steam at such long wavelengths. For many applications, MIR coherent light sources based on solid state lasers in combination with optical parametric oscillators are too complex and thus bulky and expensive. In contrast, quantum cascade lasers (QCLs) constitute a class of very compact and robust semiconductor-based lasers, which are able to cover the mentioned wavelength range using the same semiconductor material system. In this tutorial, a brief review will be given on the state-of-the-art of QCL technology. Special emphasis will be addressed on QCL variants with well-defined spectral properties and spectral tunability. As an example for the use of wavelength agile QCL for active hyperspectral imaging, stand-off detection of explosives based on imaging backscattering laser spectroscopy will be discussed.

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

DOEpatents

Mazur, Eric [Concord, MA; Shen, Mengyan [Arlington, MA

2008-10-28

The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

DOEpatents

Mazur, Eric; Shen, Mengyan

2015-09-15

The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

DOEpatents

Mazur, Eric , Shen; Mengyan, [Belmont, MA

2011-02-08

The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Dry etching method for compound semiconductors

DOEpatents

Shul, Randy J.; Constantine, Christopher

1997-01-01

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

Dry etching method for compound semiconductors

DOEpatents

Shul, R.J.; Constantine, C.

1997-04-29

A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror

NASA Astrophysics Data System (ADS)

Hsin, W.; Du, G.; Gamelin, J. K.; Malloy, K. J.; Wang, S.

1990-03-01

A surface emitting laser diode (SELD) with two distributed Bragg reflectors (DBR) and semiconductor multilayer air-bridge-supported top mirror is fabricated. A low threshold current of 1.5 mA is achieved under room temperature CW operation. The spectrum shows a strong peak at 891 nm with a FWHM of 10 A. With light emission from the top Bragg reflector instead of from the back side of the substrate, laser arrays are easily formed with this novel structure.

Copper vapour laser with an efficient semiconductor pump generator having comparable pump pulse and output pulse durations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yurkin, A A

2016-03-31

We report the results of experimental studies of a copper vapour laser with a semiconductor pump generator capable of forming virtually optimal pump pulses with a current rise steepness of about 40 A ns{sup -1} in a KULON LT-1.5CU active element. To maintain the operating temperature of the active element's channel, an additional heating pulsed oscillator is used. High efficiency of the pump generator is demonstrated. (lasers)

Study of the spectral width of intermode beats and optical spectrum of an actively mode-locked three-mirror semiconductor laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zakharyash, Valerii F; Kashirsky, Aleksandr V; Klementyev, Vasilii M

2005-09-30

Various oscillation regimes of an actively mode-locked semiconductor laser are studied experimentally. Two types of regimes are found in which the minimal spectral width ({approx}3.5 kHz) of intermode beats is achieved. The width of the optical spectrum of modes is studied as a function of their locking and the feedback coefficients. The maximum width of the spectrum is {approx}3.7 THz. (control of laser radiation parameters)

Intracavity dispersion effect on timing jitter of ultralow noise mode-locked semiconductor based external-cavity laser.

PubMed

Gee, S; Ozharar, S; Plant, J J; Juodawlkis, P W; Delfyett, P J

2009-02-01

We report the generation of optical pulse trains with 380 as of residual timing jitter (1 Hz-1 MHz) from a mode-locked external-cavity semiconductor laser, through a combination of optimizing the intracavity dispersion and utilizing a high-power, low-noise InGaAsP quantum-well slab-coupled optical waveguide amplifier gain medium. This is, to our knowledge, the lowest residual timing jitter reported to date from an actively mode-locked laser.

The intravascular low level laser irradiation (ILLLI) in treatment of psoriasis clinically

NASA Astrophysics Data System (ADS)

Zhu, Jing; Nie, Fan; Shi, Hong-Min

2005-07-01

Objective: The title is research curative effect of intravascular low level laser irradiation (ILLLI) in treatment of psoriasis. Method: 478 patients with psoriasis from five groups to observe their efficacy. Group1 were treated by He-Ne laser combined with drug. Group 2 were treated by semi-conductor laser combined with drug. Group 3 were treated only by He-He laser. Group 4 were treated by semi-conductor laser. Group 5 were treated only by drug. The Ridit statistical analysis was applied to all of these data. The treatment of intravascular low level laser irradiation is as follow: laser power:4-5mw, 1 hour per day and 10 days as a period combined with vit C 2.0 g iv and inhalation of O2. Results: The clinical results: the near efficient rate was 100%, in group1-4, if combined with drugs it would be better. Ridit statistical analysis showed no significant difference between group1-4, p>0.05. The efficient rate 72.97% in group5.There were showed very significant difference with group1-4, p<0.01. 2.There were no significant differences between He-Ne laser (632.8nm) and semiconductor laser(650nm); 3.The efficacy of ILLLI in psoriasis was positive correlation to the ILLLI times. Conclusions: It can improve curative effect of intravascular low levellaser irradiation (ILLLI) in treatment of psoriasis.

Calibration-free sensor for pressure and H2O concentration in headspace of sterile vial using tunable diode laser absorption spectroscopy.

PubMed

Cai, Tingdong; Gao, Guangzhen; Liu, Ying

2013-11-10

Tunable diode laser absorption measurements of pressure and H2O concentration in the headspace of vials using a distributed-feedback (DFB) diode laser near 1.4 μm are reported. A H2O line located near 7161.41 cm(-1) is selected based on its strong absorption strength and isolation from interference of neighboring transitions. Direct absorption spectra of H2O are obtained for the measurement path as well as the reference path by scanning the laser wavelength. The pressure and H2O vapor concentration in the headspace of a vial are inferred from a differential absorption signal, which is the difference between the measured and the referenced absorbance spectra. This sensor is calibration-free and no purge gas is needed. The demonstrated capability would enable measurements of pressure and H2O concentration in the headspace of vials within 2.21% and 2.86%, respectively. A precision of 1.02 Torr and 390 ppm is found for the pressure and H2O concentration, respectively. A set of measurements for commercial freeze-dried products are also performed to illustrate the usefulness of this sensor.

Laser damage mechanisms in conductive widegap semiconductor films

DOE PAGES

Yoo, Jae-Hyuck; Menor, Marlon G.; Adams, John J.; ...

2016-07-25

Here, laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN,more » carbon complexes were proposed as potential damage precursors or markers.« less

Application of laser spot cutting on spring contact probe for semiconductor package inspection

NASA Astrophysics Data System (ADS)

Lee, Dongkyoung; Cho, Jungdon; Kim, Chan Ho; Lee, Seung Hwan

2017-12-01

A packaged semiconductor has to be electrically tested to make sure they are free of any manufacturing defects. The test interface, typically employed between a Printed Circuit Board and the semiconductor devices, consists of densely populated Spring Contact Probe (SCP). A standard SCP typically consists of a plunger, a barrel, and an internal spring. Among these components, plungers are manufactured by a stamping process. After stamping, plunger connecting arms need to be cut into pieces. Currently, mechanical cutting has been used. However, it may damage to the body of plungers due to the mechanical force engaged at the cutting point. Therefore, laser spot cutting is considered to solve this problem. The plunger arm is in the shape of a rectangular beam, 50 μm (H) × 90 μm (W). The plunger material used for this research is gold coated beryllium copper. Laser parameters, such as power and elapsed time, have been selected to study laser spot cutting. Laser material interaction characteristics such as a crater size, material removal zone, ablation depth, ablation threshold, and full penetration are observed. Furthermore, a carefully chosen laser parameter (Etotal = 1000mJ) to test feasibility of laser spot cutting are applied. The result show that laser spot cutting can be applied to cut SCP.

The effect of ILLLI on peripheral blood SOD, MDA in psoriasis treatment

NASA Astrophysics Data System (ADS)

Zhu, Jing; Nie, Fan

2005-07-01

Objective: To research the effect of Intravascular low level laser irradiation (ILLLI) on the SOD,MDA in the treatment of psoriasis. Method :47 patients suffering from psoriasis from five groups were treated by Intravascular low level laser irradiation (power:4-5mw,1h per day, period of treatment: 10 days) .We checked the change of SOD,MDA peripheral blood in 10 normal people between pre and post treatment. Group A were treated by He-Ne laser combined with drug, group B were treated by semi-conductor laser combined with drug, group C were treated only by He-Ne laser, group D were treated only by semiconductor laser, group E were treated only by drug . Results: The levels of SOD in red cell of psoriatic patients from five groups after treatment were significantly lower than that of controlled group. The levels of SOD of them were significantly increased and nearly closed to that of controlled group; the levels of MDA in red cell of psoriatic patients from five groups after treatment were significantly higher than that of controlled group; the levels of MDA of them are decreased ,however, they were still not recovered to normal levels. Conclusions: ILLLI, both He-Ne laser and semiconductor laser, can activate SOD in psoriasis patients and enhance their ability of anti-oxidation.

Group III-arsenide-nitride long wavelength laser diodes

NASA Astrophysics Data System (ADS)

Coldren, Christopher W.

Semiconductor laser diodes transmitting data over silica optical fiber form the backbone of modern day communications systems, enabling terabit per second data transmission over hundreds to thousands of kilometers of distance. The wavelength of emission of the transmission semiconductor laser diode is a critical parameter that determines the performance of the communications system. In high performance fiber optic communications systems, lasers emitting at 1300nm and 1550nm are used because of the low loss and distortion properties of the fiber in these spectral windows. The available lasers today that operate in these fiber optic transmission windows suffer from high cost and poor performance under the typical environmental conditions and require costly and unreliable cooling systems. This dissertation presents work that demonstrates that it is possible to make lasers devices with 1300nm laser emission that are compatible with low cost and operation under extreme operating conditions. The key enabling technology developed is a novel semiconductor material based structure. A group III-Arsenide-Nitride quantum well structure was developed that can be grown expitaxially on GaAs substrates. The properties of this group III-Arsenide-Nitride structure allowed high performance edge emitting and vertical cavity surface emitting lasers to be fabricated which exhibited low threshold currents and low sensitivity to operating temperature.

Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

NASA Astrophysics Data System (ADS)

Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

2018-02-01

We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

Developments of high frequency and intensity stabilized lasers for space gravitational wave detector DECIGO/B-DECIGO

NASA Astrophysics Data System (ADS)

Suemasa, Aru; Shimo-oku, Ayumi; Nakagawa, Ken'ichi; Musha, Mitsuru

2017-12-01

In Japan, not only the ground-based gravitational wave (GW) detector mission KAGRA but also the space GW detector mission DECIGO (DECi-hertz Interferometer Gravitational wave Observatory) and its milestone mission B-DECIGO have been promoted. The designed strain sensitivity of DECIGO and B-DECIGO are δL/ L < 10-23. Since the GW detector requires high power and highly-stable light source, we have developed the light source with high frequency and intensity stability for DECIGO and B-DECIGO. The frequency of the Yb-doped fiber DFB lasers are stabilized to the iodine saturated absorption at 515 nm, and the intensity of the laser at 1 Hz (observation band) is stabilized by controlling the pump source of an Yb-doped fiber amplifier. The intensity of the laser at 200 kHz (modulation band) is also stabilized using an acousto-optic modulator to improve the frequency stability of the laser. In the consequences, we obtain the frequency stability of δf = 0.4 Hz/√Hz (in-loop) at 1 Hz, and the intensity stability of δI/ I = 1.2 × 10-7/√Hz (out-of-loop) and δI/I = 1.5 × 10-7/√Hz (in-loop) at 1 Hz and 200 kHz, respectively.

Optical double-locked semiconductor lasers

NASA Astrophysics Data System (ADS)

AlMulla, Mohammad

2018-06-01

Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

Critical side channel effects in random bit generation with multiple semiconductor lasers in a polarization-based quantum key distribution system.

PubMed

Ko, Heasin; Choi, Byung-Seok; Choe, Joong-Seon; Kim, Kap-Joong; Kim, Jong-Hoi; Youn, Chun Ju

2017-08-21

Most polarization-based BB84 quantum key distribution (QKD) systems utilize multiple lasers to generate one of four polarization quantum states randomly. However, random bit generation with multiple lasers can potentially open critical side channels that significantly endangers the security of QKD systems. In this paper, we show unnoticed side channels of temporal disparity and intensity fluctuation, which possibly exist in the operation of multiple semiconductor laser diodes. Experimental results show that the side channels can enormously degrade security performance of QKD systems. An important system issue for the improvement of quantum bit error rate (QBER) related with laser driving condition is further addressed with experimental results.

Unitary lens semiconductor device

DOEpatents

Lear, K.L.

1997-05-27

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

Computational Modeling of Semiconductor Dynamics at Femtosecond Time Scales

NASA Technical Reports Server (NTRS)

Agrawal, Govind P.; Goorjian, Peter M.

1998-01-01

The main objective of the Joint-Research Interchange NCC2-5149 was to develop computer codes for accurate simulation of femtosecond pulse propagation in semiconductor lasers and semiconductor amplifiers [I]. The code should take into account all relevant processes such as the interband and intraband carrier relaxation mechanisms and the many-body effects arising from the Coulomb interaction among charge carriers [2]. This objective was fully accomplished. We made use of a previously developed algorithm developed at NASA Ames [3]-[5]. The new algorithm was tested on several problems of practical importance. One such problem was related to the amplification of femtosecond optical pulses in semiconductors. These results were presented in several international conferences over a period of three years. With the help of a postdoctoral fellow, we also investigated the origin of instabilities that can lead to the formation of femtosecond pulses in different kinds of lasers. We analyzed the occurrence of absolute instabilities in lasers that contain a dispersive host material with third-order nonlinearities. Starting from the Maxwell-Bloch equations, we derived general multimode equations to distinguish between convective and absolute instabilities. We find that both self-phase modulation and intensity-dependent absorption can dramatically affect the absolute stability of such lasers. In particular, the self-pulsing threshold (the so-called second laser threshold) can occur at few times the first laser threshold even in good-cavity lasers for which no self-pulsing occurs in the absence of intensity-dependent absorption. These results were presented in an international conference and published in the form of two papers.

Sub-nanosecond periodically poled lithium niobate optical parametric generator and amplifier pumped by an actively Q-switched diode-pumped Nd:YAG microlaser

NASA Astrophysics Data System (ADS)

Liu, L.; Wang, H. Y.; Ning, Y.; Shen, C.; Si, L.; Yang, Y.; Bao, Q. L.; Ren, G.

2017-05-01

A sub-nanosecond seeded optical parametric generator (OPG) based on magnesium oxide-doped periodically poled lithium niobate (MgO:PPLN) crystal is presented. Pumped by an actively Q-switched diode-pumped 1 kHz, 1064 nm, Nd:YAG microlaser and seeded with a low power distributed feedback (DFB) diode continuous-wave (CW) laser, the OPG generated an output energy of 41.4 µJ and 681 ps pulse duration for the signal at 1652.4 nm, achieving a quantum conversion efficiency of 61.2% and a slope efficiency of 41.8%. Signal tuning was achieved from 1651.0 to 1652.4 nm by tuning the seed-laser current. The FWHM of the signal spectrum was approximately from 35 nm to 0.5 nm by injection seed laser. The SHG doubled the frequency of OPG signal to produce a output energy of 12 µJ with the energy conversion efficiency of 29.0% and tunanble wavelength near 826 nm.

Ppbv-Level Ethane Detection Using Quartz-Enhanced Photoacoustic Spectroscopy with a Continuous-Wave, Room Temperature Interband Cascade Laser

PubMed Central

Li, Chunguang; Dong, Lei; Zheng, Chuantao; Lin, Jun; Wang, Yiding

2018-01-01

A ppbv-level quartz-enhanced photoacoustic spectroscopy (QEPAS)-based ethane (C2H6) sensor was demonstrated by using a 3.3 μm continuous-wave (CW), distributed feedback (DFB) interband cascade laser (ICL). The ICL was employed for targeting a strong C2H6 absorption line located at 2996.88 cm−1 in its fundamental absorption band. Wavelength modulation spectroscopy (WMS) combined with the second harmonic (2f) detection technique was utilized to increase the signal-to-noise ratio (SNR) and simplify data acquisition and processing. Gas pressure and laser frequency modulation depth were optimized to be 100 Torr and 0.106 cm−1, respectively, for maximizing the 2f signal amplitude. Performance of the QEPAS sensor was evaluated using specially prepared C2H6 samples. A detection limit of 11 parts per billion in volume (ppbv) was obtained with a 1-s integration time based on an Allan-Werle variance analysis, and the detection precision can be further improved to ~1.5 ppbv by increasing the integration time up to 230 s. PMID:29495610

Effective line intensity measurements of trans-nitrous acid (HONO) of the ν1 band near 3600 cm-1 using laser difference-frequency spectrometer

NASA Astrophysics Data System (ADS)

Maamary, Rabih; Fertein, Eric; Fourmentin, Marc; Dewaele, Dorothée; Cazier, Fabrice; Chen, Changshui; Chen, Weidong

2017-07-01

We report on the measurements of the effective line intensities of the ν1 fundamental band of trans-nitrous acid (trans-HONO) in the infrared near 3600 cm-1 (2.78 μm). A home-made widely tunable laser spectrometer based on difference-frequency generation (DFG) was used for this study. The strengths of 28 well-resolved absorption lines of the ν1 band were determined by scaling their absorption intensities to the well referenced absorption line intensity of the ν3 band of trans-HONO around 1250 cm-1 recorded simultaneously with the help of a DFB quantum cascade laser (QCL) spectrometer. The maximum measurement uncertainty of 12% in the line intensities is mainly determined by the uncertainty announced in the referenced line intensities, while the measurement precision in frequency positions of the absorption lines is better than 6×10-4 cm-1. The cross-measurement carried out in the present work allows one to perform intensity calibration using well referenced line parameters.

Single-mode very wide tunability in laterally coupled semiconductor lasers with electrically controlled reflectivities

NASA Astrophysics Data System (ADS)

Griffel, Giora; Chen, Howard Z.; Grave, Ilan; Yariv, Amnon

1991-04-01

The operation of a novel multisection structure comprised of laterally coupled gain-guided semiconductor lasers is demonstrated. It is shown that tunable single longitudinal mode operation can be achieved with a high degree of frequency selectivity. The device has a tuning range of 14.5 nm, the widest observed to date in a monolithic device.

Semiconductor devices for optical communications in 1 micron band of wavelength. [gallium indium arsenide phosphide lasers and diodes

NASA Technical Reports Server (NTRS)

Suematsu, Y.; Iga, K.

1980-01-01

Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Refractive indices of superlattices made of III-V semiconductor compounds and their solid solutions and semiconductor waveguide laser structures

NASA Astrophysics Data System (ADS)

Unger, K.

1988-11-01

An analysis is made of the theoretical problems encountered in precision calculations of refractive indices of semiconductor materials arising in connection with the use of superlattices as active layers in double-heterostructure lasers and in connection with the use of the impurity-induced disordering effect, i.e., the ability to transform selectively a superlattice into a corresponding solid solution. This can be done by diffusion or ion implantation. A review is given of calculations of refractive indices based on the knowledge of the energy band structure and the role of disorder is considered particularly. An anomaly observed in the (InAl)As system is considered. It is shown that the local field effects and exciton transitions are important. A reasonable approach is clearly a direct calculation of the difference between the refractive indices of superlattices based on compounds and of those based on their solid solutions.

Optical Properties of A GaInNAs Multi-Quantum Well Semiconductor

NASA Astrophysics Data System (ADS)

Hughes, Timothy S.; Ren, Shang-Fen; Jiang, De-Sheng; Xiaogan, Liang

2002-03-01

Optoelectronic devices used today depend on lasers that have wavelengths in the optical fiber transmission window of 1.3 to 1.55 micrometers. When using GaAs substrate semiconductor lasers, we typically see this range of light emission. Quaternary materials, such as GaInNAs grown on this substrate, not only allow us to control the output wavelength, but it also allows us to manipulate the lattice constant. Further research has potential to produce low-costing highly efficient Vertical Cavity Surface Emitting Lasers (VCSEL). Using a Fourier-Transform Spectrometer, a method of using a Michelson Interferometer to measure the interference between two coherent beams, we measured and analyzed the photoluminescence spectra of a GaInNAs multi-quantum well semiconductor, grown using the Molecular Beam Epitaxy (MBE) growth technique. The experiments of this research were carried out in an undergraduate international research experience at the Chinese Semiconductor Institute supported by the Division of International Programs of NSF.

Multi-level multi-thermal-electron FDTD simulation of plasmonic interaction with semiconducting gain media: applications to plasmonic amplifiers and nano-lasers.

PubMed

Chen, X; Bhola, B; Huang, Y; Ho, S T

2010-08-02

Interactions between a semiconducting gain medium and confined plasmon-polaritons are studied using a multilevel multi-thermal-electron finite-difference time-domain (MLMTE-FDTD) simulator. We investigated the amplification of wave propagating in a plasmonic metal-semiconductor-metal (MSM) waveguide filled with semiconductor gain medium and obtained the conditions required to achieve net optical gain. The MSM gain waveguide is used to form a plasmonic semiconductor nano-ring laser(PSNRL) with an effective mode volume of 0.0071 microm3, which is about an order of magnitude smaller than the smallest demonstrated integrated photonic crystal based laser cavities. The simulation shows a lasing threshold current density of 1kA/cm2 for a 300 nm outer diameter ring cavity with 80 nm-wide ring. This current density can be realistically achieved in typical III-V semiconductor, which shows the experimental feasibility of the proposed PSNRL structure.

Coupled-resonator vertical-cavity lasers with two active gain regions

DOEpatents

Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

2003-05-20

A new class of coupled-resonator vertical-cavity semiconductor lasers has been developed. These lasers have multiple resonant cavities containing regions of active laser media, resulting in a multi-terminal laser component with a wide range of novel properties.

Optical frequency stabilization in infrared region using improved dual feed-back loop

NASA Astrophysics Data System (ADS)

Ružička, B.; Číp, O.; Lazar, J.

2007-03-01

Modern technologies such as DWDM (Dense Wavelength Division Multiplex) need precise stability of laser frequencies. According to this fact, requirements of new etalons of optical frequencies in the telecommunication band is rapidly growing. Lasers working in near infrared telecommunication band (1500-1600 nm) can be stabilized to 12C IIH II or 13C IIH II (acetylene) gas absorption lines. The acetylene gas absorption has been widely studied and accepted by international bodies of standardization as a primary wavelength reference in the near infrared band around 1550 nm. Our aim was to design and develop a compact fibre optics laser system generating coherent light in near-IR band with high frequency stability (at least 1.10 -8). This system should become a base for realization of a primary frequency standard for optical communications in the Czech Republic. Such an etalon will be needed for calibration of wavelengthmeters and spectral analysers for DWDM communication systems. We are co-operating with CMI (Czech Metrology Institute) on this project. We present stabilized laser system based on a single frequency DFB (Distributed Feedback) laser diode with a narrow spectral profile. The laser is pre-stabilized by means of the FM-spectroscopy on a passive resonator. Thanks to a fast feed-back loop we are able to improve spectral characteristics of the laser. The laser frequency is locked by a relatively slow second feed-back loop on an absorption line of acetylene vapour which is sealed in a cell under the optimised pressure.

Tunable semiconductor laser at 1025-1095 nm range for OCT applications with an extended imaging depth

NASA Astrophysics Data System (ADS)

Shramenko, Mikhail V.; Chamorovskiy, Alexander; Lyu, Hong-Chou; Lobintsov, Andrei A.; Karnowski, Karol; Yakubovich, Sergei D.; Wojtkowski, Maciej

2015-03-01

Tunable semiconductor laser for 1025-1095 nm spectral range is developed based on the InGaAs semiconductor optical amplifier and a narrow band-pass acousto-optic tunable filter in a fiber ring cavity. Mode-hop-free sweeping with tuning speeds of up to 104 nm/s was demonstrated. Instantaneous linewidth is in the range of 0.06-0.15 nm, side-mode suppression is up to 50 dB and polarization extinction ratio exceeds 18 dB. Optical power in output single mode fiber reaches 20 mW. The laser was used in OCT system for imaging a contact lens immersed in a 0.5% intra-lipid solution. The cross-section image provided the imaging depth of more than 5mm.

Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope.

PubMed

Hagmann, Mark J; Yarotski, Dmitry A; Mousa, Marwan S

2017-04-01

Quasi-periodic excitation of the tunneling junction in a scanning tunneling microscope, by a mode-locked ultrafast laser, superimposes a regular sequence of 15 fs pulses on the DC tunneling current. In the frequency domain, this is a frequency comb with harmonics at integer multiples of the laser pulse repetition frequency. With a gold sample the 200th harmonic at 14.85 GHz has a signal-to-noise ratio of 25 dB, and the power at each harmonic varies inversely with the square of the frequency. Now we report the first measurements with a semiconductor where the laser photon energy must be less than the bandgap energy of the semiconductor; the microwave frequency comb must be measured within 200 μm of the tunneling junction; and the microwave power is 25 dB below that with a metal sample and falls off more rapidly at the higher harmonics. Our results suggest that the measured attenuation of the microwave harmonics is sensitive to the semiconductor spreading resistance within 1 nm of the tunneling junction. This approach may enable sub-nanometer carrier profiling of semiconductors without requiring the diamond nanoprobes in scanning spreading resistance microscopy.

Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

NASA Technical Reports Server (NTRS)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback. We coupled a nominal 935 run-wavelength Fabry-Perot laser diode to an ultra narrow band (18 pm) FBG. When tuned by varying its temperature, the laser wavelength is pulled toward the centerline of the Bragg grating, and the spectrum of the laser output is seen to fall into three discrete stability regimes as measured by the side-mode suppression ratio.

Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers.

PubMed

Lysevych, M; Tan, H H; Karouta, F; Fu, L; Jagadish, C

2013-04-08

In this paper we report a method to overcome the limitations of gain-saturation and two-photon absorption faced by developers of high power single mode InP-based lasers and semiconductor optical amplifiers (SOA) including those based on wide-waveguide or slab-coupled optical waveguide laser (SCOWL) technology. The method is based on Y-coupling design of the laser cavity. The reduction in gain-saturation and two-photon absorption in the merged beam laser structures (MBL) are obtained by reducing the intensity of electromagnetic field in the laser cavity. Standard ridge-waveguide lasers and MBLs were fabricated, tested and compared. Despite a slightly higher threshold current, the reduced gain-saturation in MBLs results in higher output power. The MBLs also produced a single spatial mode, as well as a strongly dominating single spectral mode which is the inherent feature of MBL-type cavity.

Stimulated Brillouin scattering of laser radiation in a compensated magnetoactive semiconductor

NASA Astrophysics Data System (ADS)

Ferdous, T.; Salahuddin, M.; Amin, M. R.; Salimullah, M.

1995-09-01

In the present paper we have studied the stimulated Brillouin scattering of laser radiation in a compensated magnetoactive semiconductor. The nonlinearity in the low-frequency ion-acoustic wave arises through the ponderomotive force on both electrons and holes. The high-frequency nonlinearity arises through the nonlinear current density. For typical plasma parameters in compensated Ge, ɛL=16, T0=77 K, n00=1017 cm-3, Bs=60 kG, θ=30°, laser power density corresponding to a CO2 laser ~=0.1 MW cm-2, the growth rate of the low-frequency ion-acoustic wave turns out to be ~=107 rad sec-1.

Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rediker, R.H.

1987-06-01

In 1958 the semiconductor device group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. These efforts, in addition to yielding diodes with ns switching speeds, led to the development in early 1962 of diodes which emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rediker, R.H.

1987-06-01

In 1958 the Semiconductor Device Group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. these efforts, in addition to yielding diodes which ns switching speeds, led to the development in early 1962 of diodes that emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

All-semiconductor high-speed akinetic swept-source for OCT

NASA Astrophysics Data System (ADS)

Minneman, Michael P.; Ensher, Jason; Crawford, Michael; Derickson, Dennis

2011-12-01

A novel swept-wavelength laser for optical coherence tomography (OCT) using a monolithic semiconductor device with no moving parts is presented. The laser is a Vernier-Tuned Distributed Bragg Reflector (VT-DBR) structure exhibiting a single longitudinal mode. All-electronic wavelength tuning is achieved at a 200 kHz sweep repetition rate, 20 mW output power, over 100 nm sweep width and coherence length longer than 40 mm. OCT point-spread functions with 45- 55 dB dynamic range are demonstrated; lasers at 1550 nm, and now 1310 nm, have been developed. Because the laser's long-term tuning stability allows for electronic sample trigger generation at equal k-space intervals (electronic k-clock), the laser does not need an external optical k-clock for measurement interferometer sampling. The non-resonant, allelectronic tuning allows for continuously adjustable sweep repetition rates from mHz to 100s of kHz. Repetition rate duty cycles are continuously adjustable from single-trigger sweeps to over 99% duty cycle. The source includes a monolithically integrated power leveling feature allowing flat or Gaussian power vs. wavelength profiles. Laser fabrication is based on reliable semiconductor wafer-scale processes, leading to low and rapidly decreasing cost of manufacture.

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

DOEpatents

Mazur, Eric; Shen, Mengyan

2013-12-03

The present invention generally provides a semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

NASA Astrophysics Data System (ADS)

Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-07-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

Multiphoton in vivo imaging with a femtosecond semiconductor disk laser

PubMed Central

Voigt, Fabian F.; Emaury, Florian; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-01-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging. PMID:28717563

Carbon nanotube mode-locked vertical external-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Seger, K.; Meiser, N.; Choi, S. Y.; Jung, B. H.; Yeom, D.-I.; Rotermund, F.; Okhotnikov, O.; Laurell, F.; Pasiskevicius, V.

2014-03-01

Mode-locking an optically pumped semiconductor disk laser has been demonstrated using low-loss saturable absorption containing a mixture of single-walled carbon nanotubes in PMM polymer. The modulator was fabricated by a simple spin-coating technique on fused silica substrate and was operating in transmission. Stable passive fundamental modelocking was obtained at a repetition rate of 613 MHz with a pulse length of 1.23 ps. The mode-locked semiconductor disk laser in a compact geometry delivered a maximum average output power of 136 mW at 1074 nm.

Communication scheme using a hyperchaotic semiconductor laser model: Chaos shift key revisited

NASA Astrophysics Data System (ADS)

Fataf, N. A. A.; Palit, Sanjay Kumar; Mukherjee, Sayan; Said, M. R. M.; Son, Doan Hoai; Banerjee, Santo

2017-11-01

Based on the Maxwell-Bloch equations, we considered a five-dimensional ODE system, describing the dynamics of a semiconductor laser. The system has rich dynamics with multi-periodic, chaotic and hyperchaotic states. In this analysis, we have investigated the hyperchaotic nature of the aforesaid model and proposed a communication scheme, the generalized form of chaos shift keys, where the coupled systems do not need to be in the synchronized state. The results are implemented with the hyperchaotic laser model followed by a comprehensive security analysis.

Width-tunable pulse laser via optical injection induced gain modulation of semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Pan, Honggang; Zhang, Ailing; Tong, Zhengrong; Zhang, Yue; Song, Hongyun; Yao, Yuan

2018-03-01

A width-tunable pulse laser via an optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated. When the pump current of the SOA is 330 mA or 400 mA and a continuous wave is injected into the laser cavity with different powers, bright or dark pulses with different pulse widths and frequency repetition rates are obtained. The bright and dark pulses are formed by the effect of gain dispersion and cross-gain modulation of the SOA.

Excitability in semiconductor microring lasers: Experimental and theoretical pulse characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gelens, L.; Coomans, W.; Van der Sande, G.

2010-12-15

We characterize the operation of semiconductor microring lasers in an excitable regime. Our experiments reveal a statistical distribution of the characteristics of noise-triggered optical pulses that is not observed in other excitable systems. In particular, an inverse correlation exists between the pulse amplitude and duration. Numerical simulations and an interpretation in an asymptotic phase space confirm and explain these experimentally observed pulse characteristics.

Properties of a vector soliton laser passively mode-locked by a fiber-based semiconductor saturable absorber operating in transmission

NASA Astrophysics Data System (ADS)

Ouyang, Chunmei; Wang, Honghai; Shum, Ping; Fu, Songnian; Wong, Jia Haur; Wu, Kan; Lim, Desmond Rodney Chin Siong; Wong, Vincent Kwok Huei; Lee, Kenneth Eng Kian

2011-01-01

We experimentally demonstrate a passively mode-locked fiber laser employing a fiber-based semiconductor saturable absorber (SSA) operating in transmission. Polarization rotation locked vector solitons are observed in the laser. Due to the intrinsic dynamic feature of the laser, period-doubling of these vector solitons has also been observed. Furthermore, extra spectral sidebands are formed on the optical spectrum, caused by the energy exchange between the two orthogonal polarization components of the vector solitons. By careful reduction of the pump power together with fine adjustment to the cavity birefringence, period-one state can further be obtained. Additionally, the phase noise properties of the vector soliton fiber laser have also been characterized experimentally and analytically.

Method and system for homogenizing diode laser pump arrays

DOEpatents

Bayramian, Andrew James

2016-05-03

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

Method and system for homogenizing diode laser pump arrays

DOEpatents

Bayramian, Andy J

2013-10-01

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

[Dynamic Wavelength Characteristics of Semiconductor Laser in Electric Current Tuning Process].

PubMed

Liu, Jing-wang; Li, Zhong-yang; Zhang, Wei-zhong; Wang, Qing-chuan; An, Ying; Li, Yong-hui

2015-11-01

In order to measure the dynamic wavelength of semiconductor lasers under current tuning, an improved method of fi- ber delay self-heterodyne interferometer was proposed. The measurement principle, as well the beat frequency and dynamic wavelength of recursive relations are theoretically analyzed. The application of the experimental system measured the dynamic wavelength characteristics of distributed feedback semiconductor laser and the static wavelength characteristics measurement by the spectrometer. The comparison between the two values indicates that both dynamic and static wavelength characteristic with the current tuning are the similar non-linear curve. In 20-100 mA current tuning range, the difference of them is less than 0.002 nm. At the same time, according to the absorption lines of CO2 gas, and HITRAN spectrum library, we can identify the dynamic wavelength of the laser. Comparing it with dynamic wavelength calculated by the beat signal, the difference is only 0.001 nm, which verifies the reliability of the experimental system to measure the dynamic wavelength.

External control of semiconductor nanostructure lasers

NASA Astrophysics Data System (ADS)

Naderi, Nader A.

2011-12-01

Novel semiconductor nanostructure laser diodes such as quantum-dot and quantum-dash are key optoelectronic candidates for many applications such as data transmitters in ultra fast optical communications. This is mainly due to their unique carrier dynamics compared to conventional quantum-well lasers that enables their potential for high differential gain and modified linewidth enhancement factor. However, there are known intrinsic limitations associated with semiconductor laser dynamics that can hinder the performance including the mode stability, spectral linewidth, and direct modulation capabilities. One possible method to overcome these limitations is through the use of external control techniques. The electrical and/or optical external perturbations can be implemented to improve the parameters associated with the intrinsic laser's dynamics, such as threshold gain, damping rate, spectral linewidth, and mode selectivity. In this dissertation, studies on the impact of external control techniques through optical injection-locking, optical feedback and asymmetric current bias control on the overall performance of the nanostructure lasers were conducted in order to understand the associated intrinsic device limitations and to develop strategies for controlling the underlying dynamics to improve laser performance. In turn, the findings of this work can act as a guideline for making high performance nanostructure lasers for future ultra fast data transmitters in long-haul optical communication systems, and some can provide an insight into making a compact and low-cost terahertz optical source for future implementation in monolithic millimeter-wave integrated circuits.

Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.

PubMed

Kim, Jimyung; Delfyett, Peter J

2008-07-21

We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.

Nanocrystal structures

DOEpatents

Eisler, Hans J [Stoneham, MA; Sundar, Vikram C [Stoneham, MA; Walsh, Michael E [Everett, MA; Klimov, Victor I [Los Alamos, NM; Bawendi, Moungi G [Cambridge, MA; Smith, Henry I [Sudbury, MA

2008-12-30

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Nanocrystal structures

DOEpatents

Eisler, Hans J.; Sundar, Vikram C.; Walsh, Michael E.; Klimov, Victor I.; Bawendi, Moungi G.; Smith, Henry I.

2006-12-19

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

What's in your Douglas-fir bark?

Treesearch

M. Gabriela Buamscha; James E. Altland

2008-01-01

Douglas-fir bark is a common waste product of forest industry, and has potential use as a substrate in container nurseries. Douglas-fir bark (DFB) is strongly acidic and contains amounts of phosphorus, potassium, iron, copper and manganese within or above the levels recommended for growing container crops. As the pH of DFB decreases, electrical conductivity and amounts...

Superfocusing of mutimode semiconductor lasers and light-emitting diodes

NASA Astrophysics Data System (ADS)

Sokolovskii, G. S.; Dudelev, V. V.; Losev, S. N.; Deryagin, A. G.; Kuchinskii, V. I.; Sibbett, W.; Rafailov, E. U.

2012-05-01

The problem of focusing multimode radiation of high-power semiconductor lasers and light-emitting diodes (LEDs) has been studied. In these sources, low spatial quality of the output beam determines theoretical limit of the focal spot size (one to two orders of magnitude exceeding the diffraction limit), thus restricting the possibility of increasing power density and creating optical field gradients that are necessary in many practical applications. In order to overcome this limitation, we have developed a method of superfocusing of multimode radiation with the aid of interference. It is shown that, using this method, the focal spot size of high-power semiconductor lasers and LEDs can be reduced to a level unachievable by means of traditional focusing. An approach to exceed the theoretical limit of power density for focusing of radiation with high propagation parameter M 2 is proposed.

Semiconductor laser self-mixing micro-vibration measuring technology based on Hilbert transform

NASA Astrophysics Data System (ADS)

Tao, Yufeng; Wang, Ming; Xia, Wei

2016-06-01

A signal-processing synthesizing Wavelet transform and Hilbert transform is employed to measurement of uniform or non-uniform vibrations in self-mixing interferometer on semiconductor laser diode with quantum well. Background noise and fringe inclination are solved by decomposing effect, fringe counting is adopted to automatic determine decomposing level, a couple of exact quadrature signals are produced by Hilbert transform to extract vibration. The tempting potential of real-time measuring micro vibration with high accuracy and wide dynamic response bandwidth using proposed method is proven by both simulation and experiment. Advantages and error sources are presented as well. Main features of proposed semiconductor laser self-mixing interferometer are constant current supply, high resolution, simplest optical path and much higher tolerance to feedback level than existing self-mixing interferometers, which is competitive for non-contact vibration measurement.

Range Resolved CO2 Atmospheric Backscattering Measurements Using Fiber Lasers and RZPN Code Modulation

NASA Technical Reports Server (NTRS)

Burris, John

2011-01-01

We report the use of a return-to- zero (RZPN) pseudo noise modulation technique for making range resolved measurements of CO2 within the planetary boundary layer (PBL) using commercial, off-the-shelf, components. Conventional, range resolved, DIAL measurements require laser pulse widths that are significantly shorter than the desired spatial resolution and necessitate using pulses whose temporal spacing is such that scattered returns from only a single pulse are observed by the receiver at any one time (for the PBL pulse separations must be greater than approximately 20 microseconds). This imposes significant operational limitations when using currently available fiber lasers because of the resulting low duty cycle (less than approximately 0.0005) and consequent low average laser output power. The RZPN modulation technique enables a fiber laser to operate at much higher duty cycles (approaching 0.04) thereby more effectively utilizing the amplifier's output. This increases the counts received by approximately two orders of magnitude. Our approach involves employing two distributed feedback lasers (DFB), each modulated by a different RPZN code, whose outputs are then amplified by a CW fiber amplifier. One laser is tuned to a CO2 absorption line; the other operates offline thereby permitting the simultaneous acquisition of both on and offline signals using independent RZPN codes. This minimizes the impact of atmospheric turbulence on the measurement. The on and offline signals are retrieved by deconvolving the return signal using the appropriate kernels.

Near-IR laser frequency standard stabilized using FM-spectroscopy

NASA Astrophysics Data System (ADS)

Ružička, Bohdan; Číp, Ondřej; Lazar, Josef

2006-02-01

At the present time fiber-optics and optical communication are in rapid progress. Modern technologies such as DWDM (Dense Wavelength Division Multiplex) need precise stability of laser frequencies. According to this fact, requirements of new etalons of optical frequencies in the telecommunication band is rapidly growing. Lasers working in near infrared telecommunication band (1500-1600 nm) can be stabilized to 12C IIH II or 13C IIH II (acetylene) gas absorption lines. The acetylene gas absorption has been widely studied and accepted by international bodies of standardization as a primary wavelength reference in the near infrared band around 1550nm. Our aim was to design and develop a compact fibre optics laser system generating coherent light in near-JR band with high frequency stability (at least 1.10 -8). This system should become a base for realization of a primary frequency standard for optical communications in the Czech Republic. Such an etalon will be needed for calibration of wavelength-meters and spectral analysers for DWDM communication systems. We are co-operating with CMI (Czech Metrology Institute) on this project. We present stabilized laser system based on a single frequency DFB (Distributed Feedback) laser diode with a narrow spectral profile. The laser is pre-stabilized by means of the FM-spectroscopy on a passive resonator. Thanks to a fast feed-back loop we are able to improve spectral characteristics of the laser. The laser frequency is locked by a relatively slow second feed-back loop on an absorption line of acetylene vapour which is sealed in a cell under the optimised pressure.

High temperature heat source generation with a very low power level quasi-cw(continuous wave) semiconductor laser for medical use

NASA Astrophysics Data System (ADS)

Fujimoto, Takahiro; Imai, Yusuke; Tei, Kazuyoku; Fujioka, Tomoo; Yamaguchi, Shigeru

2013-03-01

In most of medical and dental laser treatments, high power pulsed laser have been used as desirable light sources employing with an optical fiber delivery system. The treatment process involves high temperature thermal effect associated with direct laser absorption of the materials such as hard and soft tissues, tooth, bones and so on. Such treatments sometimes face technical difficulties suffering from their optical absorption properties. We investigate a new technology to create high temperature heat source on the tip surface of the glass fiber proposed for the medical surgery applications. Using a low power level (4 6W) semiconductor laser at a wavelength of 980nm, a laser coupled fiber tip was pre-processed to contain certain amount of TiO2 powder with a depth of 400μm from the tip surface so that the irradiated low laser energy could be perfectly absorbed to be transferred to thermal energy. Thus the laser treatment can be performed without suffering from any optical characteristic of the material. Semiconductor laser was operated quasi-CW mode pulse time duration of 180ms and more than 95% of the laser energy was converted to thermal energy in the fiber tip. by Based on twocolor thermometry by using a gated optical multichannel analyzer with 0.25m spectrometer in visible wavelength region, the temperature of the fiber tip was analyzed. The temperature of the heat source was measured to be approximately 3000K. Demonstration of laser processing employing this system was successfully carried out drilling through holes in ceramic materials simulating bone surgery.

Light intensity-voltage correlations and leakage-current excess noise in a single-mode semiconductor laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurin, I.; Bramati, A.; Giacobino, E.

2005-09-15

Semiconductor lasers are particularly well suited for the implementation of pump-noise suppression, yielding a reduction of the intensity noise in the laser. In this simple picture, the maximal amount of squeezing is equal to the quantum efficiency. However, experimental results on intensity noise reduction by pump-noise suppression are usually above this limit. This discrepancy suggests that additional noise sources must be involved. Here we successful y interpret the full noise behavior of a single-mode laser diode far above threshold by considering two excess noise sources: the leakage current fluctuations across the laser and the Petermann excess noise. We have estimatedmore » the contribution of each noise source using the results of the correlations between the laser output intensity noise and the voltage fluctuations across the laser diode (light-voltage correlations) and obtained good agreement between our theory and experimental results.« less

Diode Lasers and Practical Trace Analysis.

ERIC Educational Resources Information Center

Imasaka, Totaro; Nobuhiko, Ishibashi

1990-01-01

Applications of lasers to molecular absorption spectrometry, molecular fluorescence spectrometry, visible semiconductor fluorometry, atomic absorption spectrometry, and atomic fluorescence spectrometry are discussed. Details of the use of the frequency-doubled diode laser are provided. (CW)

Effects of High Power Lasers, Number 7, November 1975 - Jun 1976

DTIC Science & Technology

1976-09-28

June 1976. Articles are grouped by laser interaction with metals, dielectrics, semiconductors, miscellaneous targets, and laser-plasma interaction. A first- author index and an index of source abbreviations are appended.

Apertureless scanning microscope probe as a detector of semiconductor laser emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dunaevskiy, Mikhail, E-mail: Mike.Dunaeffsky@mail.ioffe.ru; National Research University of Information Technologies, Mechanics and Optics; Dontsov, Anton

2015-04-27

An operating semiconductor laser has been studied using a scanning probe microscope. A shift of the resonance frequency of probe that is due to its heating by laser radiation has been analyzed. The observed shift is proportional to the absorbed radiation and can be used to measure the laser near field or its output power. A periodical dependence of the measured signal has been observed as a function of distance between the probe and the surface of the laser due to the interference of the outgoing and cantilever-reflected waves. Due to the multiple reflections resulting in the interference, the lightmore » absorption by the probe cantilever is greatly enhanced compared with a single pass case. Interaction of infrared emission of a diode laser with different probes has been studied.« less

High-power quantum-dot tapered tunable external-cavity lasers based on chirped and unchirped structures.

PubMed

Haggett, Stephanie; Krakowski, Michel; Montrosset, Ivo; Cataluna, Maria Ana

2014-09-22

A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor optical amplifier at its core is presented, enabling a record output power for a broadly tunable semiconductor laser source in the 1.2 - 1.3 µm spectral region. Two distinct optical amplifiers are investigated, using either chirped or unchirped quantum-dot structures, and their merits are compared, considering the combination of tunability and high output power generation. At 1230 nm, the chirped quantum-dot laser achieved a maximum power of 0.62 W and demonstrated nearly 100-nm tunability. The unchirped laser enabled a tunability range of 32 nm and at 1254 nm generated a maximum power of 0.97 W, representing a 22-fold increase in output power compared with similar narrow-ridge external-cavity lasers at the same current density.

Frequency control using a complex effective reflectivity in laterally coupled semiconductor laser arrays.

PubMed

Griffel, G; Marshall, W K; Gravé, I; Yariv, A; Nabiev, R

1991-08-01

Frequency selectivity of a novel type of multielement, multisection laterally coupled semiconductor laser array is studied using the round-trip method. It is found that such a structure should lead to a strong frequency selectivity owing to a periodic dependency of the threshold gain on the frequency. A gain-guided two-coupledcavity device was fabricated. The experimental results show excellent agreement with the theoretical prediction.

Spiking Excitable Semiconductor Laser as Optical Neurons: Dynamics, Clustering and Global Emerging Behaviors

DTIC Science & Technology

2014-06-28

constructed from inexpensive semiconductor lasers could lead to the development of novel neuro-inspired optical computing devices (threshold detectors ...optical computing devices (threshold detectors , logic gates, signal recognition, etc.). Other topics of research included the analysis of extreme events in...Extreme events is nowadays a highly active field of research. Rogue waves, earthquakes of high magnitude and financial crises are all rare and

Waveguide embedded plasmon laser with multiplexing and electrical modulation

DOEpatents

Ma, Ren-min; Zhang, Xiang

2017-08-29

This disclosure provides systems, methods, and apparatus related to nanometer scale lasers. In one aspect, a device includes a substrate, a line of metal disposed on the substrate, an insulating material disposed on the line of metal, and a line of semiconductor material disposed on the substrate and the insulating material. The line of semiconductor material overlaying the line of metal, disposed on the insulating material, forms a plasmonic cavity.

Determination of the effective refractive index spectrum of a quantum-well semiconductor laser diode from the measured modal gain spectrum

NASA Astrophysics Data System (ADS)

Wu, Linzhang; Tian, Wei; Gao, Feng

2004-09-01

This paper presents a self-consistent method to directly determine the effective refractive-index spectrum of a semiconductor quantum-well (QW) laser diode from the measured modal gain spectrum for a given current. The dispersion spectra of the optical waveguide confinement factor and the strongly carrier-density-dependent refractive index of the QW active layer of the test laser are also accurately obtained. The experimental result from a single QW GaInP/AlGaInP laser diode, which has 6 nm thick compressively strained Ga0.4InP active layer sandwiched by two 80 nm thick Al0.33GaInP, is presented.

High-energy side-peak emission of exciton-polariton condensates in high density regime

PubMed Central

Horikiri, Tomoyuki; Yamaguchi, Makoto; Kamide, Kenji; Matsuo, Yasuhiro; Byrnes, Tim; Ishida, Natsuko; Löffler, Andreas; Höfling, Sven; Shikano, Yutaka; Ogawa, Tetsuo; Forchel, Alfred; Yamamoto, Yoshihisa

2016-01-01

In a standard semiconductor laser, electrons and holes recombine via stimulated emission to emit coherent light, in a process that is far from thermal equilibrium. Exciton-polariton condensates–sharing the same basic device structure as a semiconductor laser, consisting of quantum wells coupled to a microcavity–have been investigated primarily at densities far below the Mott density for signatures of Bose-Einstein condensation. At high densities approaching the Mott density, exciton-polariton condensates are generally thought to revert to a standard semiconductor laser, with the loss of strong coupling. Here, we report the observation of a photoluminescence sideband at high densities that cannot be accounted for by conventional semiconductor lasing. This also differs from an upper-polariton peak by the observation of the excitation power dependence in the peak-energy separation. Our interpretation as a persistent coherent electron-hole-photon coupling captures several features of this sideband, although a complete understanding of the experimental data is lacking. A full understanding of the observations should lead to a development in non-equilibrium many-body physics. PMID:27193700

Deposition of dopant impurities and pulsed energy drive-in

DOEpatents

Wickboldt, Paul; Carey, Paul G.; Smith, Patrick M.; Ellingboe, Albert R.

2008-01-01

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

Deposition of dopant impurities and pulsed energy drive-in

DOEpatents

Wickboldt, Paul; Carey, Paul G.; Smith, Patrick M.; Ellingboe, Albert R.

1999-01-01

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

Deposition of dopant impurities and pulsed energy drive-in

DOEpatents

Wickboldt, P.; Carey, P.G.; Smith, P.M.; Ellingboe, A.R.

1999-06-29

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.

Enhanced adhesion of films to semiconductors or metals by high energy bombardment

NASA Technical Reports Server (NTRS)

Tombrello, Thomas A. (Inventor); Qiu, Yuanxun (Inventor); Mendenhall, Marcus H. (Inventor)

1985-01-01

Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

Formulation and acoustic studies of a new phase-shift agent for diagnostic and therapeutic ultrasound.

PubMed

Sheeran, Paul S; Luois, Samantha; Dayton, Paul A; Matsunaga, Terry O

2011-09-06

Recent efforts in the area of acoustic droplet vaporization with the objective of designing extravascular ultrasound contrast agents has led to the development of stabilized, lipid-encapsulated nanodroplets of the highly volatile compound decafluorobutane (DFB). We developed two methods of generating DFB droplets, the first of which involves condensing DFB gas (boiling point from -1.1 to -2 °C) followed by extrusion with a lipid formulation in HEPES buffer. Acoustic droplet vaporization of micrometer-sized lipid-coated droplets at diagnostic ultrasound frequencies and mechanical indices were confirmed optically. In our second formulation methodology, we demonstrate the formulation of submicrometer-sized lipid-coated nanodroplets based upon condensation of preformed microbubbles containing DFB. The droplets are routinely in the 200-300 nm range and yield microbubbles on the order of 1-5 μm once vaporized, consistent with ideal gas law expansion predictions. The simple and effective nature of this methodology allows for the development of a variety of different formulations that can be used for imaging, drug and gene delivery, and therapy. This study is the first to our knowledge to demonstrate both a method of generating ADV agents by microbubble condensation and formulation of primarily submicrometer droplets of decafluorobutane that remain stable at physiological temperatures. Finally, activation of DFB nanodroplets is demonstrated using pressures within the FDA guidelines for diagnostic imaging, which may minimize the potential for bioeffects in humans. This methodology offers a new means of developing extravascular contrast agents for diagnostic and therapeutic applications. © 2011 American Chemical Society

The Impact of Selection with Diflubenzuron, a Chitin Synthesis Inhibitor, on the Fitness of Two Brazilian Aedes aegypti Field Populations.

PubMed

Belinato, Thiago Affonso; Valle, Denise

2015-01-01

Several Aedes aegypti field populations are resistant to neurotoxic insecticides, mainly organophoshates and pyrethroids, which are extensively used as larvicides and adulticides, respectively. Diflubenzuron (DFB), a chitin synthesis inhibitor (CSI), was recently approved for use in drinking water, and is presently employed in Brazil for Ae. aegypti control, against populations resistant to the organophosphate temephos. However, tests of DFB efficacy against field Ae. aegypti populations are lacking. In addition, information regarding the dynamics of CSI resistance, and characterization of any potential fitness effects that may arise in conjunction with resistance are essential for new Ae. aegypti control strategies. Here, the efficacy of DFB was evaluated for two Brazilian Ae. aegypti populations known to be resistant to both temephos and the pyrethroid deltamethrin. Laboratory selection for DFB resistance was then performed over six or seven generations, using a fixed dose of insecticide that inhibited 80% of adult emergence in the first generation. The selection process was stopped when adult emergence in the diflubenzuron-treated groups was equivalent to that of the control groups, kept without insecticide. Diflubenzuron was effective against the two Ae. aegypti field populations evaluated, regardless of their resistance level to neurotoxic insecticides. However, only a few generations of DFB selection were sufficient to change the susceptible status of both populations to this compound. Several aspects of mosquito biology were affected in both selected populations, indicating that diflubenzuron resistance acquisition is associated with a fitness cost. We believe that these results can significantly contribute to the design of control strategies involving the use of insect growth regulators.

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Demonstration of a rapidly-swept external cavity quantum cascade laser for atmospheric sensing applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brumfield, Brian E.; Taubman, Matthew S.; Phillips, Mark C.

2016-07-01

The application of quantum cascade lasers (QCLs) in atmospheric science for trace detection of gases has been demonstrated using sensors in point or remote sensing configurations. Many of these systems utilize single narrowly-tunable (~10 cm-1) distributed feedback (DFB-) QCLs that limit simultaneous detection to a restricted number of small chemical species like H2O or N2O. The narrow wavelength range of DFB-QCLs precludes accurate quantification of large chemical species with broad rotationally-unresolved vibrational spectra, such as volatile organic compounds, that play an important role in the chemistry of the atmosphere. External-cavity (EC-) QCL systems are available that offer tuning ranges >100more » cm-1, making them excellent IR sources for measuring multiple small and large chemical species in the atmosphere. While the broad wavelength coverage afforded by an EC system enables measurements of large chemical species, most commercial systems can only be swept over their entire wavelength range at less than 10 Hz. This prohibits broadband simultaneous measurements of multiple chemicals in plumes from natural or industrial sources where turbulence and/or chemical reactivity are resulting in rapid changes in chemical composition on sub-1s timescales. At Pacific Northwest National Laboratory we have developed rapidly-swept EC-QCL technology that acquires broadband absorption spectra (~100 cm-1) on ms timescales. The spectral resolution of this system has enabled simultaneous measurement of narrow rotationally-resolved atmospherically-broadened lines from small chemical species, while offering the broad tuning range needed to measure broadband spectral features from multiple large chemical species. In this talk the application of this technology for open-path atmospheric measurements will be discussed based on results from laboratory measurements with simulated plumes of chemicals. The performance offered by the system for simultaneous detection of multiple chemical species will be presented.« less