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Sample records for diameter-dependent dopant location

  1. Exact location of dopants below the Si(001):H surface from scanning tunneling microscopy and density functional theory

    NASA Astrophysics Data System (ADS)

    Brázdová, Veronika; Bowler, David R.; Sinthiptharakoon, Kitiphat; Studer, Philipp; Rahnejat, Adam; Curson, Neil J.; Schofield, Steven R.; Fisher, Andrew J.

    2017-02-01

    Control of dopants in silicon remains crucial to tailoring the properties of electronic materials for integrated circuits. Silicon is also finding new applications in coherent quantum devices, as a magnetically quiet environment for impurity orbitals. The ionization energies and shapes of the dopant orbitals depend on the surfaces and interfaces with which they interact. The location of the dopant and local environment effects will therefore determine the functionality of both future quantum information processors and next-generation semiconductor devices. Here we match observed dopant wave functions from scanning tunneling microscopy (STM) to images simulated from first-principles density functional theory (DFT) calculations and precisely determine the substitutional sites of neutral As dopants between 5 and 15 Å below the Si(001):H surface. We gain a full understanding of the interaction of the donor state with the surface and the transition between the bulk dopant and the dopants in the surface layer.

  2. Three-dimensional location of a single dopant with atomic precision by aberration-corrected scanning transmission electron microscopy.

    PubMed

    Ishikawa, Ryo; Lupini, Andrew R; Findlay, Scott D; Taniguchi, Takashi; Pennycook, Stephen J

    2014-01-01

    Materials properties, such as optical and electronic response, can be greatly enhanced by isolated single dopants. Determining the full three-dimensional single-dopant defect structure and spatial distribution is therefore critical to understanding and adequately tuning functional properties. Combining quantitative Z-contrast scanning transmission electron microscopy images with image simulations, we show the direct determination of the atomic-scale depth location of an optically active, single atom Ce dopant embedded within wurtzite-type AlN. The method represents a powerful new tool for reconstructing three-dimensional information from a single, two-dimensional image.

  3. Diameter-dependent hydrophobicity in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Kyakuno, Haruka; Fukasawa, Mamoru; Ichimura, Ryota; Matsuda, Kazuyuki; Nakai, Yusuke; Miyata, Yasumitsu; Saito, Takeshi; Maniwa, Yutaka

    2016-08-01

    Single-wall carbon nanotubes (SWCNTs) are a good model system that provides atomically smooth nanocavities. It has been reported that water-SWCNTs exhibit hydrophobicity depending on the temperature T and the SWCNT diameter D. SWCNTs adsorb water molecules spontaneously in their cylindrical pores around room temperature, whereas they exhibit a hydrophilic-hydrophobic transition or wet-dry transition (WDT) at a critical temperature Twd ≈ 220-230 K and above a critical diameter Dc ≈ 1.4-1.6 nm. However, details of the WDT phenomenon and its mechanism remain unknown. Here, we report a systematic experimental study involving X-ray diffraction, optical microscopy, and differential scanning calorimetry. It is found that water molecules inside thick SWCNTs (D > Dc) evaporate and condense into ice Ih outside the SWCNTs at Twd upon cooling, and the ice Ih evaporates and condenses inside the SWCNTs upon heating. On the other hand, residual water trapped inside the SWCNTs below Twd freezes. Molecular dynamics simulations indicate that upon lowering T, the hydrophobicity of thick SWCNTs increases without any structural transition, while the water inside thin SWCNTs (D < Dc) exhibits a structural transition, forming an ordered ice. This ice has a well-developed hydrogen bonding network adapting to the cylindrical pores of the SWCNTs. Thus, the unusual diameter dependence of the WDT is attributed to the adaptability of the structure of water to the pore dimension and shape.

  4. Diameter dependent thermoelectric properties of individual SnTe nanowires

    DOE PAGES

    Xu, E. Z.; Li, Z.; Martinez, J. A.; ...

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a promising thermoelectric material. In this work, we report on the first thermoelectric study of individual single-crystalline SnTe nanowires with different diameters ranging from ~ 218 to ~ 913 nm. Measurements of thermopower S, electrical conductivity σ and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While the electrical conductivity does not show a strong diameter dependence, the thermopower increases by a factor of two when the nanowire diameter is decreased from ~ 913 nm to ~more » 218 nm. The thermal conductivity of the measured NWs is lower than that of the bulk SnTe, which may arise from the enhanced phonon - surface boundary scattering and phonon-defect scattering. Lastly, temperature dependent figure of merit ZT was determined for individual nanowires and the achieved maximum value at room temperature is about three times higher than that in bulk samples of comparable carrier density.« less

  5. Diameter dependent thermoelectric properties of individual SnTe nanowires

    SciTech Connect

    Xu, E. Z.; Li, Z.; Martinez, J. A.; Sinitsyn, N.; Htoon, H.; Li, Nan; Swartzentruber, B.; Hollingsworth, J. A.; Wang, Jian; Zhang, S. X.

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a promising thermoelectric material. In this work, we report on the first thermoelectric study of individual single-crystalline SnTe nanowires with different diameters ranging from ~ 218 to ~ 913 nm. Measurements of thermopower S, electrical conductivity σ and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While the electrical conductivity does not show a strong diameter dependence, the thermopower increases by a factor of two when the nanowire diameter is decreased from ~ 913 nm to ~ 218 nm. The thermal conductivity of the measured NWs is lower than that of the bulk SnTe, which may arise from the enhanced phonon - surface boundary scattering and phonon-defect scattering. Lastly, temperature dependent figure of merit ZT was determined for individual nanowires and the achieved maximum value at room temperature is about three times higher than that in bulk samples of comparable carrier density.

  6. Diameter dependent thermoelectric properties of individual SnTe nanowires

    DOE PAGES

    Xu, E. Z.; Li, Z.; Martinez, J. A.; ...

    2015-01-15

    The lead-free compound tin telluride (SnTe) has recently been suggested to be a potentially promising thermoelectric material because of its similar electronic band structure as the well-known lead telluride. Here we report on the first thermoelectric study of individual single crystalline SnTe nanowires (NWs) with different diameters ranging from ~200 to ~1000 nm. Measurements of thermopower S, electrical conductivity σ, and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While σ does not show a strong diameter dependence, the thermopower increases by a factor of 2 when the nanowiremore » diameter is decreased from 1000 nm to 200 nm. The thermal conductivities of the measured NWs are only about half of that of the bulk SnTe, which may arise from the enhanced phonon-grain boundary and phonon-defect scatterings. Temperature dependent figure-of-merit ZT was determined and the maximum value at room temperature is ~3 times higher than what was obtained in bulk samples of comparable carrier density.« less

  7. Diameter dependent electron transfer kinetics in semiconductor-enzyme complexes.

    PubMed

    Brown, Katherine A; Song, Qing; Mulder, David W; King, Paul W

    2014-10-28

    Excited state electron transfer (ET) is a fundamental step for the catalytic conversion of solar energy into chemical energy. To understand the properties controlling ET between photoexcited nanoparticles and catalysts, the ET kinetics were measured for solution-phase complexes of CdTe quantum dots and Clostridium acetobutylicum [FeFe]-hydrogenase I (CaI) using time-resolved photoluminescence spectroscopy. Over a 2.0-3.5 nm diameter range of CdTe nanoparticles, the observed ET rate (kET) was sensitive to CaI concentration. To account for diameter effects on CaI binding, a Langmuir isotherm and two geometric binding models were created to estimate maximal CaI affinities and coverages at saturating concentrations. Normalizing the ET kinetics to CaI surface coverage for each CdTe diameter led to k(ET) values that were insensitive to diameter, despite a decrease in the free energy for photoexcited ET (ΔGET) with increasing diameter. The turnover frequency (TOF) of CaI in CdTe-CaI complexes was measured at several molar ratios. Normalization for diameter-dependent changes in CaI coverage showed an increase in TOF with diameter. These results suggest that k(ET) and H2 production for CdTe-CaI complexes are not strictly controlled by ΔG(ET) and that other factors must be considered.

  8. Diameter Dependent Thermoelectric Properties of Individual SnTe Nanowires

    NASA Astrophysics Data System (ADS)

    Xu, E. Z.; Li, Z.; Martinez, J.; Sinitsyn, N.; Htoon, H.; Li, N.; Swartzentruber, B.; Hollingsworth, J.; Wang, J.; Zhang, S. X.

    2015-03-01

    Tin telluride (SnTe), a newly discovered topological crystalline insulator, has recently been suggested to be a promising thermoelectric material. In this work, we report on a systematic study of the thermoelectric properties of individual single-crystalline SnTe nanowires with different diameters. Measurements of thermopower, electrical conductivity and thermal conductivity were carried out on the same nanowires over a temperature range of 25 - 300 K. While the electrical conductivity does not show a strong diameter dependence, we found that the thermopower increases by a factor of two when the nanowire diameter is decreased from 913 nm to 218 nm. The thermal conductivity of the measured NWs is lower than that of the bulk SnTe, which may be attributed to the enhanced phonon - surface boundary scattering and phonon-defect scattering. We further calculated the temperature dependent figure of merit ZT for each individual nanowire. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Los Alamos National Laboratory (Contract DE-AC52-06NA25396) and Sandia National Laboratories (Contract DE-AC04-94AL85000). We acknowledge support by the Los Alamos LDRD program.

  9. Location of trivalent lanthanide dopant energy levels in (Lu{sub 0.5}Gd{sub 0.5}){sub 2}O{sub 3}

    SciTech Connect

    Retot, H.; Viana, B.; Bessiere, A.; Galtayries, A.

    2011-06-15

    The location of Ln{sup 3+} dopant energy levels relative to bands in (Lu{sub 0.5}Gd{sub 0.5}){sub 2}O{sub 3} was studied. A several-steps analysis of XPS measurements on heavy lanthanides sesquioxides Ln{sub 2}O{sub 3} (Ln = Gd, Tb, Dy, Er, Tm, Yb, Lu) and on Sc{sub 2}O{sub 3} and Y{sub 2}O{sub 3} reference materials were used to locate Ln{sup 3+} dopant ground state relative to the top of the valence band in (Lu{sub 0.5}Gd{sub 0.5}){sub 2}O{sub 3} within an error bar of {+-}0.4 eV. The agreement between XPS data and model was found improved relative to previous studies. When compared to XPS analysis, prediction based on optical absorption shows a slight underestimation attributed to the lack of precision in Ce{sup 4+} charge transfer band measurement.

  10. Diameter Dependence of Lattice Thermal Conductivity of Single-Walled Carbon Nanotubes: Study from Ab Initio.

    PubMed

    Yue, Sheng-Ying; Ouyang, Tao; Hu, Ming

    2015-10-22

    The effects of temperature, tube length, defects, and surface functionalization on the thermal conductivity (κ) of single-walled carbon nanotubes (SWCNTs) were well documented in literature. However, diameter dependence of thermal conductivity of SWCNTs received less attentions. So far, diverse trends of the diameter dependence have been discussed by different methods and all the previous results were based on empirical interatomic potentials. In this paper, we emphasize to clarify accurate κ values of SWCNTs with different diameters and in-plane κ of graphene. All the studies were under the framework of anharmonic lattice dynamics and Boltzmann transport equation (BTE) based on first principle calculations. We try to infer the right trend of diameter dependent thermal conductivity of SWCNTs. We infer that graphene is the limitation as SWCNT with an infinite diameter. We analyzed the thermal conductivity contributions from each phonon mode in SWCNTs to explain the trend. Meanwhile, we also identify the extremely low thermal conductivity of ultra-thin SWCNTs.

  11. CdSe nanocrystals: controlled growth and diameter-dependent photoluminescence

    NASA Astrophysics Data System (ADS)

    Zhang, Qiang; Yang, Ping; Chen, Hsueh Shin; Huang, Baibiao; Shen, Jianxing

    2014-02-01

    Phosphonic and carboxylic acids were used as capping agents to fabricate CdSe nanocrystals (NCs) through organic synthesis, leading to a controlled growth of the NCs with adjustable morphologies from dots to rods. The binding energies and steric hindrance of ligands dramatically affected the growth kinetics of CdSe NCs, and therefore the resulting geometry of NCs. The detailed investigations of ligand effect on the growth of NCs and an efficient control over the NCs morphology were presented. CdSe nanorods (NRs) with various aspect ratios were created for studying relation between the diameter of NRs and photoluminescence (PL). Consequently, a synergic use of PL spectra and transmission electron microscopy images allowed us to systematically investigate the relationship between morphology and PL properties of as-prepared CdSe rods. The PL properties of CdSe NRs were finally found to be strongly diameter dependent and weakly related to their lengths.

  12. Diameter Dependence of Giant Magneto-Impedance Effect in Co-BASED Melt Extracted Amorphous Wires

    NASA Astrophysics Data System (ADS)

    Zhang, Shuling; Xing, Dawei; Sun, Jianfei

    2011-06-01

    Naked Co68.25Fe4.5Si12.25B15 amorphous wires of 67μm, 56μm, 52μm, 47μm and 31μm in diameter are produced by melt extraction method. Their giant magneto impedance (GMI) effect is investigated at frequencies from 0.1MHz to13MHz. Significant diameter dependence of GMI effect is studied. Thicker wires exhibit strong GMI effect and have clear characteristic frequencies at which their impedance ratio ΔZ/Z are largest. Largest impedance response is obtained in 67μm wires with the ΔZ/Z of 442% and field sensitivity of 71.5%/Oe. Wires of 31μm in diameter show increasing ΔZ/Z as frequency and have a steady field sensitivity of 30.7-33.6%/Oe in a wide frequency range from 3MHz to 13MHz. The different frequency dependence of GMI effect is discussed in the light of the skin effect. These amorphous wires are suitable for applications in high performance field sensors and can fit different demand.

  13. Introduction of a Nozzle Throat Diameter Dependency into the SRM Dust Size Distribution

    NASA Astrophysics Data System (ADS)

    Stabroth, S.; Wegener, P.; Oswald, M.; Wiedemann, C.; Klinkrad, H.; Vörsmann, P.

    In the exhaust gas of SRM (Solid Rocket Motor) firings, a considerable amount of very small aluminium oxide (Al2O3) particles is generally included. In order to increase motor performance and to dampen burn instabilities, aluminium is used as an additive in the propellant. During the burn process this aluminium is transformed into Al2O3. A large number of small dust particles (< 1 μ m up to about 50 μ m) is generated continuously during a burn. At the end of a burn, a second group of much larger fragments from an Al2O3 slag pool clustering inside the motor leaves the nozzle. The ESA space debris population model MASTER-2001 considers 1,032 SRM firings with the associated generation of SRM slag and dust. The resulting Al2O3 population is a major contribution to the micron size space debris environment in Earth orbit. For the modelling of each SRM dust release event a detailed knowledge of the size distribution is essential. However, the knowledge of the particle size distribution after passing the nozzle throat is poor. The current dust implementation in the MASTER-2001 space debris model therefore assumes an average motor size, since information on the actual motor size is normally not available in common databases. Thus, a fixed distribution is identically used for large upper stages as well as small apogee motors. This assumption can lead to an over-representation of large dust in regions, where mainly apogee motors are used (i.e. GEO) and an under-representation in lower altitudes, where large stages predominate. In this paper, a concept for the improvement of SRM dust size modelling is discussed. It will be shown that an introduction of a nozzle throat diameter dependency into the dust size distribution could lead to a more precise modelling of SRM dust release events. Investigations showed that there is a good correlation between the propellant mass flow and the nozzle's throat diameter, which is in turn the determining term for the actual diameter

  14. Spatial metrology of dopants in silicon with exact lattice site precision.

    PubMed

    Usman, M; Bocquel, J; Salfi, J; Voisin, B; Tankasala, A; Rahman, R; Simmons, M Y; Rogge, S; Hollenberg, L C L

    2016-09-01

    Scaling of Si-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but also by their positions in the crystal. Determination of the precise dopant location is an unsolved problem in applications from channel doping in ultrascaled transistors to quantum information processing. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pinpoint the exact coordinates of the dopant in the Si crystal. The technique is underpinned by the observation that STM images contain atomic-sized features in ordered patterns that are highly sensitive to the STM tip orbital and the absolute dopant lattice site. The demonstrated ability to determine the locations of P and As dopants to 5 nm depths will provide critical information for the design and optimization of nanoscale devices for classical and quantum computing applications.

  15. Spatial metrology of dopants in silicon with exact lattice site precision

    NASA Astrophysics Data System (ADS)

    Usman, M.; Bocquel, J.; Salfi, J.; Voisin, B.; Tankasala, A.; Rahman, R.; Simmons, M. Y.; Rogge, S.; Hollenberg, L. C. L.

    2016-09-01

    Scaling of Si-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but also by their positions in the crystal. Determination of the precise dopant location is an unsolved problem in applications from channel doping in ultrascaled transistors to quantum information processing. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pinpoint the exact coordinates of the dopant in the Si crystal. The technique is underpinned by the observation that STM images contain atomic-sized features in ordered patterns that are highly sensitive to the STM tip orbital and the absolute dopant lattice site. The demonstrated ability to determine the locations of P and As dopants to 5 nm depths will provide critical information for the design and optimization of nanoscale devices for classical and quantum computing applications.

  16. Nonmonotonic Diameter Dependence of Thermal Conductivity of Extremely Thin Si Nanowires: Competition between Hydrodynamic Phonon Flow and Boundary Scattering.

    PubMed

    Zhou, Yanguang; Zhang, Xiaoliang; Hu, Ming

    2017-02-08

    By carefully and systematically performing Green-Kubo equilibrium molecular dynamics simulations, we report that the thermal conductivity (κ) of Si nanowires (NWs) does not diverge but converges and increases steeply when NW diameter (D) becomes extremely small (dκ/dD < 0), a long debate of one-dimensional heat conduction in history. The κ of the thinnest possible Si NWs reaches a superhigh level that is as large as more than 1 order of magnitude higher than its bulk counterpart. The abnormality is explained in terms of the dominant normal (N) process (energy and momentum conservation) of low frequency acoustic phonons that induces hydrodynamic phonon flow in the Si NWs without being scattered. With D increasing, the downward shift of optical phonons triggers strong Umklapp (U) scattering with acoustic phonons and attenuates the N process, leading to the regime of phonon boundary scattering (dκ/dD < 0). The two competing mechanisms result in nonmonotonic diameter dependence of κ with minima at critical diameter of 2-3 nm. Our results unambiguously demonstrate the converged κ and the clear trend of κ ∼ D for extremely thin Si NWs by fully elucidating the competition between the hydrodynamic phonon flow and phonon boundary scattering.

  17. Diameter dependent polarization in ZnO/MgO disk-in-wire emitters: Multiscale modeling of optical quantum efficiency

    NASA Astrophysics Data System (ADS)

    Al-Qahtani, Saad Mubarak; Abdullah, Abdulmuin Mostafa A.; Nishat, Md. Rezaul Karim; Ahmed, Shaikh S.

    2017-03-01

    A multiscale computational study is performed to investigate how electronic structure, optical transitions, and terminal characteristics of nanostructured ZnO/MgO disk-in-wire emitters are governed by an intricate coupling of size-quantization, atomicity, and built-in structural and polarization fields. As for the models, an 8-band sp3 (with spin) atomistic tight-binding basis set was used to construct the Hamiltonian of the device in wurtzite crystal symmetry. Strain and the associated distortions of bond directions and bond lengths were modeled via the valence force-field (VFF) molecular mechanics framework. Specifically, in this work, a recently proposed ab initio based diameter-dependent model for the piezoelectric fields was implemented, which, as compared to the conventional diameter-independent model, was found to curb the influence of spontaneous (pyroelectric) polarization significantly. This particular finding is further illustrated through the calculation of electronic bandgap and localization of wavefunctions, optical emission characteristics, and the internal quantum efficiency of the device.

  18. SU-F-18C-11: Diameter Dependency of the Radial Dose Distribution in a Long Polyethylene Cylinder

    SciTech Connect

    Bakalyar, D; McKenney, S; Feng, W

    2014-06-15

    Purpose: The radial dose distribution in the central plane of a long cylinder following a long CT scan depends upon the diameter and composition of the cylinder. An understanding of this behavior is required for determining the spatial average of the dose in the central plane. Polyethylene, the material for construction of the TG200/ICRU phantom (30 cm in diameter) was used for this study. Size effects are germane to the principles incorporated in size specific dose estimates (SSDE); thus diameter dependency was explored as well. Method: ssuming a uniform cylinder and cylindrically symmetric conditions of irradiation, the dose distribution can be described using a radial function. This function must be an even function of the radial distance due to the conditions of symmetry. Two effects are accounted for: The direct beam makes its weakest contribution at the center while the contribution due to scatter is strongest at the center and drops off abruptly at the outer radius. An analytic function incorporating these features was fit to Monte Carlo results determined for infinite polyethylene cylinders of various diameters. A further feature of this function is that it is integrable. Results: Symmetry and continuity dictate a local extremum at the center which is a minimum for the larger sizes. The competing effects described above can Resultin an absolute maximum occurring between the center and outer edge of the cylinders. For the smallest cylinders, the maximum dose may occur at the center. Conclusion: An integrable, analytic function can be used to characterize the radial dependency of dose for cylindrical CT phantoms of various sizes. One use for this is to help determine average dose distribution over the central cylinder plane when equilibrium dose has been reached.

  19. New photosensitive dopants for liquid argon

    NASA Astrophysics Data System (ADS)

    Anderson, D. F.

    1986-05-01

    Thirteen photosensitive dopants for liquid argon are presented, and the criteria for selecting prospective new dopants are discussed. A substantial improvement in energy resolution for 5.5 MeV alpha particles is measured in liquid argon when a photosensitive dopant is added.

  20. Structural Effects of Lanthanide Dopants on Alumina

    NASA Astrophysics Data System (ADS)

    Patel, Ketan; Blair, Victoria; Douglas, Justin; Dai, Qilin; Liu, Yaohua; Ren, Shenqiang; Brennan, Raymond

    2017-01-01

    Lanthanide (Ln3+) doping in alumina has shown great promise for stabilizing and promoting desirable phase formation to achieve optimized physical and chemical properties. However, doping alumina with Ln elements is generally accompanied by formation of new phases (i.e. LnAlO3, Ln2O3), and therefore inclusion of Ln-doping mechanisms for phase stabilization of the alumina lattice is indispensable. In this study, Ln-doping (400 ppm) of the alumina lattice crucially delays the onset of phase transformation and enables phase population control, which is achieved without the formation of new phases. The delay in phase transition (θ → α), and alteration of powder morphology, particle dimensions, and composition ratios between α- and θ-alumina phases are studied using a combination of solid state nuclear magnetic resonance, electron microscopy, digital scanning calorimetry, and high resolution X-ray diffraction with refinement fitting. Loading alumina with a sparse concentration of Ln-dopants suggests that the dopants reside in the vacant octahedral locations within the alumina lattice, where complete conversion into the thermodynamically stable α-domain is shown in dysprosium (Dy)- and lutetium (Lu)-doped alumina. This study opens up the potential to control the structure and phase composition of Ln-doped alumina for emerging applications.

  1. Structural Effects of Lanthanide Dopants on Alumina

    DOE PAGES

    Patel, Ketan; Blair, Victoria; Douglas, Justin; ...

    2017-01-06

    Lanthanide (Ln3+) doping in alumina has shown great promise for stabilizing and promoting desirable phase formation to achieve optimized physical and chemical properties. However, doping alumina with Ln elements is generally accompanied by formation of new phases (i.e. LnAlO3, Ln2O3), and therefore inclusion of Ln-doping mechanisms for phase stabilization of the alumina lattice is indispensable. In this study, Ln-doping (400 ppm) of the alumina lattice crucially delays the onset of phase transformation and enables phase population control, which is achieved without the formation of new phases. In addition, the delay in phase transition (θ → α), and alteration of powdermore » morphology, particle dimensions, and composition ratios between α- and θ-alumina phases are studied using a combination of solid state nuclear magnetic resonance, electron microscopy, digital scanning calorimetry, and high resolution X-ray diffraction with refinement fitting. Loading alumina with a sparse concentration of Ln-dopants suggests that the dopants reside in the vacant octahedral locations within the alumina lattice, where complete conversion into the thermodynamically stable α-domain is shown in dysprosium (Dy)- and lutetium (Lu)-doped alumina. Lastly, this study opens up the potential to control the structure and phase composition of Ln-doped alumina for emerging applications.« less

  2. Structural Effects of Lanthanide Dopants on Alumina

    PubMed Central

    Patel, Ketan; Blair, Victoria; Douglas, Justin; Dai, Qilin; Liu, Yaohua; Ren, Shenqiang; Brennan, Raymond

    2017-01-01

    Lanthanide (Ln3+) doping in alumina has shown great promise for stabilizing and promoting desirable phase formation to achieve optimized physical and chemical properties. However, doping alumina with Ln elements is generally accompanied by formation of new phases (i.e. LnAlO3, Ln2O3), and therefore inclusion of Ln-doping mechanisms for phase stabilization of the alumina lattice is indispensable. In this study, Ln-doping (400 ppm) of the alumina lattice crucially delays the onset of phase transformation and enables phase population control, which is achieved without the formation of new phases. The delay in phase transition (θ → α), and alteration of powder morphology, particle dimensions, and composition ratios between α- and θ-alumina phases are studied using a combination of solid state nuclear magnetic resonance, electron microscopy, digital scanning calorimetry, and high resolution X-ray diffraction with refinement fitting. Loading alumina with a sparse concentration of Ln-dopants suggests that the dopants reside in the vacant octahedral locations within the alumina lattice, where complete conversion into the thermodynamically stable α-domain is shown in dysprosium (Dy)- and lutetium (Lu)-doped alumina. This study opens up the potential to control the structure and phase composition of Ln-doped alumina for emerging applications. PMID:28059121

  3. Dopant diffusion in tungsten silicide

    SciTech Connect

    Pan, P.; Hsieh, N.; Geipel, H.J. Jr.; Slusser, G.J.

    1982-04-01

    The dopant (B, P, and As) redistribution in a silicide on polycrystalline silicon structure after annealing at 800 and 1000 /sup 0/C was studied. The distribution of boron was found to be quite different from these of phosphorus and arsenic. At 1000 /sup 0/C, the distribution coefficient for boron at the WSi/sub 2//polycrystalline silicon interface was found to be 2.7. The solubilities of phosphorus and arsenic in WSi/sub 2/ at 1000 /sup 0/C were estimated to be 6 x 10/sup 19/ and 1.6 x 10/sup 19/ atoms/cm/sup 3/, respectively. At 800 /sup 0/C, the diffusion coefficient for the dopants was found to be equal to, or greater than 3.3 x 10/sup -12/ cm/sup 2//s, which is at least three orders of magnitude larger than in silicon.

  4. Dopant Distribution in NIF Beryllium Ablator Capsules

    NASA Astrophysics Data System (ADS)

    Huang, H.; Xu, H. W.; Youngblood, K. P.; Wall, D. R.; Stephens, R. B.; Moreno, K. A.; Nikroo, A.; Salmonson, J. D.; Haan, S. W.; Wu, K. J.; Wang, Y. M.; Hamza, A. V.

    2012-10-01

    Good implosion performance requires capsule ablator material with spherically uniform x-ray opacity, which is controlled by one of several dopants (Cu, Si, Al, etc.) in the Be shell. During production, the dopant concentration is radially stepped. However, the various Be-dopant interactions result in vastly different dopant distribution patterns, some quite inhomogeneous. We have characterized these structures and established the phenomenological basis and the magnitudes of the inhomogeneity both in spatial length scales and in atomic percent. We will discuss the case of inhomogeneous Cu diffusion in detail, followed by discussions of other dopants and the estimate of the impact of these structures on target implosion.

  5. Location, Location, Location!

    ERIC Educational Resources Information Center

    Ramsdell, Kristin

    2004-01-01

    Of prime importance in real estate, location is also a key element in the appeal of romances. Popular geographic settings and historical periods sell, unpopular ones do not--not always with a logical explanation, as the author discovered when she conducted a survey on this topic last year. (Why, for example, are the French Revolution and the…

  6. Prospects for photosensitive dopants in liquid argon

    SciTech Connect

    Anderson, D.F.

    1990-12-01

    Evidence is presented that the addition of a few ppM of a photosensitive dopant to a U/liquid argon or Pb/liquid argon calorimeter will make a substantial reduction in the e/{pi} ratio. Previous results indicating high voltage problems and no change in the e/{pi} ratio in tests of photosensitive dopants with the Fermilab D0 experiment's U/liquid argon tests calorimeter are also explained. 13 refs., 3 figs.

  7. Automatic Replenishment Of Dopant In Silicon Growth

    NASA Technical Reports Server (NTRS)

    Kochka, E. L.

    1988-01-01

    Dopant incorporated feed pellets to maintain required concentration. Technique of continuous replenishment of dopant in silicon melt helps ensure correct resistivity in solid silicon grown from melt. Technique used in dendritic-web growth process in which ribbon of silicon continously pulled from molten material. Providing uniform doping and resistivity in ribbon technique enables production of high-quality silicon ribbon at high yields for use in semiconductor devices.

  8. Numerical algorithms for the atomistic dopant profiling of semiconductor materials

    NASA Astrophysics Data System (ADS)

    Aghaei Anvigh, Samira

    In this dissertation, we investigate the possibility to use scanning microscopy such as scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) for the "atomistic" dopant profiling of semiconductor materials. For this purpose, we first analyze the discrete effects of random dopant fluctuations (RDF) on SCM and SSRM measurements with nanoscale probes and show that RDF significantly affects the differential capacitance and spreading resistance of the SCM and SSRM measurements if the dimension of the probe is below 50 nm. Then, we develop a mathematical algorithm to compute the spatial coordinates of the ionized impurities in the depletion region using a set of scanning microscopy measurements. The proposed numerical algorithm is then applied to extract the (x, y, z) coordinates of ionized impurities in the depletion region in the case of a few semiconductor materials with different doping configuration. The numerical algorithm developed to solve the above inverse problem is based on the evaluation of doping sensitivity functions of the differential capacitance, which show how sensitive the differential capacitance is to doping variations at different locations. To develop the numerical algorithm we first express the doping sensitivity functions in terms of the Gâteaux derivative of the differential capacitance, use Riesz representation theorem, and then apply a gradient optimization approach to compute the locations of the dopants. The algorithm is verified numerically using 2-D simulations, in which the C-V curves are measured at 3 different locations on the surface of the semiconductor. Although the cases studied in this dissertation are much idealized and, in reality, the C-V measurements are subject to noise and other experimental errors, it is shown that if the differential capacitance is measured precisely, SCM measurements can be potentially used for the "atomistic" profiling of ionized impurities in doped semiconductors.

  9. Development of dopant-free conductive bioelastomers

    PubMed Central

    Xu, Cancan; Huang, Yihui; Yepez, Gerardo; Wei, Zi; Liu, Fuqiang; Bugarin, Alejandro; Tang, Liping; Hong, Yi

    2016-01-01

    Conductive biodegradable materials are of great interest for various biomedical applications, such as tissue repair and bioelectronics. They generally consist of multiple components, including biodegradable polymer/non-degradable conductive polymer/dopant, biodegradable conductive polymer/dopant or biodegradable polymer/non-degradable inorganic additives. The dopants or additives induce material instability that can be complex and possibly toxic. Material softness and elasticity are also highly expected for soft tissue repair and soft electronics. To address these concerns, we designed a unicomponent dopant-free conductive polyurethane elastomer (DCPU) by chemically linking biodegradable segments, conductive segments, and dopant molecules into one polymer chain. The DCPU films which had robust mechanical properties with high elasticity and conductivity can be degraded enzymatically and by hydrolysis. It exhibited great electrical stability in physiological environment with charge. Mouse 3T3 fibroblasts survived and proliferated on these films exhibiting good cytocompatibility. Polymer degradation products were non-toxic. DCPU could also be processed into a porous scaffold and in an in vivo subcutaneous implantation model, exhibited good tissue compatibility with extensive cell infiltration over 2 weeks. Such biodegradable DCPU with good flexibility and elasticity, processability, and electrical stability may find broad applications for tissue repair and soft/stretchable/wearable bioelectronics. PMID:27686216

  10. Visualizing Individual Nitrogen Dopants in Monolayer Graphene

    SciTech Connect

    L Zhao; R He; K Rim; T Schiros; K Kim; H Zhou; C Gutierrez; S Chockalingam; C Arguello; et al.

    2011-12-31

    In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.

  11. Synthesis of chiral dopants based on carbohydrates.

    PubMed

    Tsuruta, Toru; Koyama, Tetsuo; Yasutake, Mikio; Hatano, Ken; Matsuoka, Koji

    2014-07-01

    Chiral dopants based on carbohydrates for nematic liquid crystals were synthesized from D-glucose, and their helical twisting power (HTP) values were evaluated. The chiral dopants induced helices in the host nematic liquid crystals. An acetyl derivative having an ether-type glycosidic linkage between carbohydrate and a mesogenic moiety showed the highest HTP value of 10.4 μm(-1), while an acetyl derivative having an anomeric ester-type linkage did not show any HTP. It was surprising that this molecule had no HTP despite the presence of chirality in the molecule. A relationship between HTP and specific rotation was not observed in this study.

  12. Dopant penetration studies through Hf silicate

    NASA Astrophysics Data System (ADS)

    Quevedo-Lopez, M. A.; Visokay, M. R.; Chambers, J. J.; Bevan, M. J.; LiFatou, A.; Colombo, L.; Kim, M. J.; Gnade, B. E.; Wallace, R. M.

    2005-02-01

    We present a study of the penetration of B, P, and As through Hf silicate (HfSixOy) and the effect of N incorporation in Hf silicate (HfSixOyNz) on dopant penetration from doped polycrystalline silicon capping layers. The extent of penetration through Hf silicate was found to be dependent upon the thermal annealing budget for each dopant investigated as follows: B(T⩾950°C/60s), P(T⩾1000°C/20s), and As (T⩾1050°C/60s). We propose that the enhanced diffusion observed for these dopants in HfSixOy, compared with that of SiO2 films, is related to grain boundary formation resulting from HfSixOy film crystallization. We also find that, as in the case of SiO2, N incorporation inhibits dopant (B, P, and As) diffusion through the Hf silicate and thus penetration into the underlying Si substrate. Only B penetration is clearly observed through HfSiON films for anneals at 1050 °C for durations of 10 s or longer. The calculated B diffusivity through the HfSixOyNz layer is D0=5.2×10-15cm2/s.

  13. Liquid-phase electroepitaxy - Dopant segregation

    NASA Technical Reports Server (NTRS)

    Lagowski, J.; Jastrzebski, L.; Gatos, H. C.

    1980-01-01

    A theoretical model is presented which accounts for the dopant segregation in liquid-phase electroepitaxy in terms of dopant transport in the liquid phase (by electromigration and diffusion), the growth velocity, and the Peltier effect at the substrate-solution interface. The contribution of dopant electromigration to the magnitude of the effective segregation coefficient is dominant in the absence of convection; the contribution of the Peltier effect becomes significant only in the presence of pronounced convection. Quantitative expressions which relate the segregation coefficient to the growth parameters also permit the determination of the diffusion constant and electromigration mobility of the dopant in the liquid phase. The model was found to be in good agreement with the measured segregation characteristics of Sn in the electroepitaxial growth of GaAs from Ga-As solutions. For Sn in Ga-As solution at 900 C the diffusion constant was found to be 4 x 10 to the -5 sq cm/s and the electromigration velocity (toward the substrate with a positive polarity 2 x 10 to the -5 cm/s current density of 10 A/sq cm.

  14. Atom-probe for FinFET dopant characterization.

    PubMed

    Kambham, A K; Mody, J; Gilbert, M; Koelling, S; Vandervorst, W

    2011-05-01

    With the continuous shrinking of transistors and advent of new transistor architectures to keep in pace with Moore's law and ITRS goals, there is a rising interest in multigate 3D-devices like FinFETs where the channel is surrounded by gates on multiple surfaces. The performance of these devices depends on the dimensions and the spatial distribution of dopants in source/drain regions of the device. As a result there is a need for new metrology approach/technique to characterize quantitatively the dopant distribution in these devices with nanometer precision in 3D. In recent years, atom probe tomography (APT) has shown its ability to analyze semiconductor and thin insulator materials effectively with sub-nm resolution in 3D. In this paper we will discuss the methodology used to study FinFET-based structures using APT. Whereas challenges and solutions for sample preparation linked to the limited fin dimensions already have been reported before, we report here an approach to prepare fin structures for APT, which based on their processing history (trenches filled with Si) are in principle invisible in FIB and SEM. Hence alternative solutions in locating and positioning them on the APT-tip are presented. We also report on the use of the atom probe results on FinFETs to understand the role of different dopant implantation angles (10° and 45°) when attempting conformal doping of FinFETs and provide a quantitative comparison with alternative approaches such as 1D secondary ion mass spectrometry (SIMS) and theoretical model values.

  15. Analytical model for random dopant fluctuation in double-gate MOSFET in the subthreshold region using macroscopic modeling method

    NASA Astrophysics Data System (ADS)

    Shin, Yong Hyeon; Yun, Ilgu

    2016-12-01

    An analytical model is proposed for the random dopant fluctuation (RDF) in a symmetric double-gate metal-oxidesemiconductor field-effect-transistor (DG MOSFET) in the subthreshold region. Unintended impurity dopants cannot be absolutely prevented during the device fabrication; hence, it is important to analytically model the fluctuations in the electrical characteristics caused by these impurity dopants. Therefore, a macroscopic modeling method is applied to represent the impurity dopants in DG MOSFETs. With this method, the two-dimensional (2D) Poisson equation is separated into a basic analytical DG MOSFET model with channel doping concentration NA and an impurity-dopant-related term with local doping concentration NRD confined in a specific rectangular area. To solve the second term, the manually solvable 2D Green's function for DG MOSFETs is used. Through calculation of the channel potential (ϕ(x, y)), the variations in the drive current (IDS) and threshold voltage (Vth) are extracted from the analytical model. All results from the analytical model for an impurity dopant in a DG MOSFET are examined by comparisons with the commercially available 2D numerical simulation results, with respect to various oxide thicknesses (tox), channel lengths (L), and location of impurity dopants.

  16. Dopant-Catalyzed Singlet Exciton Fission.

    PubMed

    Snamina, Mateusz; Petelenz, Piotr

    2017-01-04

    In acene-based molecular crystals, singlet exciton fission occurs through superexchange mediated by two virtual charge-transfer states. Hence, it is sensitive to their energies, which depend on the local environment. The crucial point is the balance between the charge-quadrupole interactions within the pair of molecules directly involved in the process and those with the surrounding crystal matrix, which are governed by local symmetry and may be influenced by breaking this symmetry. This happens, for example, in the vicinity of a vacancy or an impurity and in the latter case is complemented by polarization energy and potentially by dipolar contributions. Our model calculations indicate that the superexchange coupling is sensitive enough to these factors to enable fission to be catalyzed by judiciously designed dopant molecules. In favorable cases, dipolar dopants are expected to increase the fission rate by an order of magnitude.

  17. Deposition of dopant impurities and pulsed energy drive-in

    DOEpatents

    Wickboldt, P.; Carey, P.G.; Smith, P.M.; Ellingboe, A.R.

    1999-06-29

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.

  18. Deposition of dopant impurities and pulsed energy drive-in

    DOEpatents

    Wickboldt, Paul; Carey, Paul G.; Smith, Patrick M.; Ellingboe, Albert R.

    2008-01-01

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

  19. Deposition of dopant impurities and pulsed energy drive-in

    DOEpatents

    Wickboldt, Paul; Carey, Paul G.; Smith, Patrick M.; Ellingboe, Albert R.

    1999-01-01

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

  20. Quantum interference and correlations in single dopants and exchange-coupled dopants in silicon

    NASA Astrophysics Data System (ADS)

    Salfi, Joe

    2015-03-01

    Quantum electronics exploiting the highly coherent states of single dopants in silicon invariably requires interactions between states and interfaces, and inter-dopant coupling by exchange interactions. We have developed a low temperature STM scheme for spatially resolved single-electron transport in a device-like environment, providing the first wave-function measurements of single donors and exchange-coupled acceptors in silicon. For single donors, we directly observed valley quantum interference due to linear superpositions of the valleys, and found that valley degrees of freedom are highly robust to the symmetry-breaking perturbation of nearby (3 nm) surfaces. For exchange-coupled acceptors, we measured the singlet-triplet splitting, and from the spatial tunneling probability, extracted enough information about the 2-body wavefunction amplitudes to determine the entanglement entropy, a measure of the quantum inseparability (quantum correlations) generated by the interactions between indistinguishable particles. Entanglement entropy of the J=3/2 holes was found to increase with increasing dopant distance, as Coulomb interactions overcome tunneling, coherently localizing spin towards a Heitler-London singlet, mimicing S=1/2 particles. In the future these capabilities will be exploited to peer into the inner workings of few-dopant quantum devices and shed new light on multi-dopant correlated states, engineered atom-by-atom. Work done collaboratively with J. A. Mol, R. Rahman, G. Klimeck, M. Y. Simmons, L. C. L. Hollenberg, and S. Rogge. Primary financial support from the ARC.

  1. Bonding of dopants to irradiated polymers

    NASA Astrophysics Data System (ADS)

    Fink, D.; Klett, R.; Hnatowicz, V.; Vacik, J.; Mathis, C.; Omichi, H.; Hosoi, F.; Chadderton, L. T.; Wang, L.

    1996-08-01

    Latent tracks are formed in polyimide, polypropylene and polyethylene by irradiation with 0.5 to 3 GeV heavy ions. They are then doped with aqueous LiCl, organo- {Li}/{THF}, or {C60}/{THF} solutions for well-defined periods after the irradiation. Subsequently, the excess of non-trapped Li dopant fraction is washed out. The remaining lithium-doped polymer zones along the latent ion tracks are studied here. The depth distribution of the bonding efficiency, as determined by neutron depth profiling, points out an electronic nature of the bonding process.

  2. Dopant materials used in the microelectronics industry.

    PubMed

    Lewis, D R

    1986-01-01

    Advances in microelectronics have transformed the occupational environment of the electronics industry. Large quantities of potentially hazardous materials are now in routine use as integrated circuit manufacturing becomes more complex and specialized. While the acute hazards associated with these dopant materials are clear, the subacute and chronic effects are less evident. Many of these elements are trace elements in humans and may play roles in health and disease in minute concentrations. Early detection and prevention of adverse health effects requires both astute medical surveillance, industrial hygiene, and safety engineering efforts to eliminate the sources of exposure to workers.

  3. Energetics of neutral Si dopants in InGaAs: An ab initio and semiempirical Tersoff model study

    NASA Astrophysics Data System (ADS)

    Lee, Cheng-Wei; Lukose, Binit; Thompson, Michael O.; Clancy, Paulette

    2015-03-01

    A roadblock in utilizing III-V semiconductors for scaled-down electronic devices is their poor dopant activation. As a first step to unravel the dopant behavior in InGaAs, we studied the tendency for dopant formation computationally using two approaches: ab initio and semiempirical methods. We studied a number of structural possibilities, such as the impact of local sites and local and global environments. We will show that the dopant we considered here, Si, has discrete preferences for certain sites and the nature of its surroundings. Substitutional defects are clearly preferred over interstitial locations. We shall show that cation ordering has an impact on dopant energetics. Critically, for large-scale simulations of dopant diffusion in InGaAs alloys, we also present a parameterization of the Abell-Tersoff semiempirical potential for pairwise interactions between silicon atoms and each of the elements constituting InGaAs. In the absence of experimental data, reference parameters for estimating the Tersoff values were obtained using ab initio pseudopotential calculations (density functional theory and generalized gradient approximations). These sets of Tersoff parameters were optimized to describe the bulk structural properties of the mostly theoretical alloys Si-As, Si-Ga, and Si-In. We demonstrate the transferability of these parameters by predicting formation energies of extrinsic point "defects" of Si on a variety of sites in ternary InGaAs alloys with different local compositional configurations, both random and ordered. Tersoff model predictions of the extrinsic "substitution energy" of a Si dopant on a cationic lattice site were found to be independent of the composition of the dopant's second nearest neighbors, but were affected by the strain induced by a local arrangement of In and Ga cationic atoms. This finding is important since common deposition processes used to create InGaAs may lead to specifically ordered patterns within the cation sublattice.

  4. Dopants and defects in conductive oxide spinels

    NASA Astrophysics Data System (ADS)

    Zakutayev, Andriy; Perkins, John; Parilla, Phillip; Paudel, Tula; Lany, Staphan; Ginely, David; Zunger, Alex

    2011-03-01

    We will discuss the effects of extrinsic and intrinsic imperfections (dopants and defects) in a group of conductive oxide materials related to Co3O4. Co3O4 is a spinel with Co2+ and Co3+ on tetrahedral and octahedral sites, respectively. Doping of Co3O4 with Zn and Ni represent two limiting cases: Zn2+ ions have a preference to occupy tetrahedral (Co2+) sites and are predicted to be unable to dope effectively; Ni2+ ions have a preference to occupy octahedral (Co3+) sites, so these atoms are expected to be efficient dopants. We found that substitution of Co3O4 spinel with up to 33 percent of Zn and Ni results in formation of ZnCo2O4 normal spinel and NiCo2O4 inverse spinel, and causes 100-fold and 1000-fold increases in conductivity, respectively, matching the predicted trend. Increase in Zn and Ni concentraion up to 40 percent cause phase separation of ZnO and NiO and leveling out of the conductivity. The conductivity decreases sharply above 50-60 percent Zn and Ni substitution level. Small differences with the theoretical predictions may be explained by non-equilibrium character of the thin film deposition process. This work was supported by the ``Center for Inverse Design'' EFRC of the Department of Energy.

  5. Anomalous dynamics of interstitial dopants in soft crystals

    NASA Astrophysics Data System (ADS)

    Tauber, Justin; Higler, Ruben; Sprakel, Joris

    2016-11-01

    The dynamics of interstitial dopants govern the properties of a wide variety of doped crystalline materials. To describe the hopping dynamics of such interstitial impurities, classical approaches often assume that dopant particles do not interact and travel through a static potential energy landscape. Here we show, using computer simulations, how these assumptions and the resulting predictions from classical Eyring-type theories break down in entropically stabilized body-centered cubic (BCC) crystals due to the thermal excitations of the crystalline matrix. Deviations are particularly severe close to melting where the lattice becomes weak and dopant dynamics exhibit strongly localized and heterogeneous dynamics. We attribute these anomalies to the failure of both assumptions underlying the classical description: (i) The instantaneous potential field experienced by dopants becomes largely disordered due to thermal fluctuations and (ii) elastic interactions cause strong dopant-dopant interactions even at low doping fractions. These results illustrate how describing nonclassical dopant dynamics requires taking the effective disordered potential energy landscape of strongly excited crystals and dopant-dopant interactions into account.

  6. Topological engineering of glass for modulating chemical state of dopants.

    PubMed

    Zhou, Shifeng; Guo, Qiangbing; Inoue, Hiroyuki; Ye, Qun; Masuno, Atsunobu; Zheng, Binbin; Yu, Yongze; Qiu, Jianrong

    2014-12-17

    A novel approach to modulating the chemical state of dopants by engineering the topological features of a glass matrix is presented. The method allows selective stabilization of dopants on a wide range of length scales, from dispersed ions to aggregated clusters to nanoparticles, leading to various intriguing optical phenomena, such as great emission enhancement and ultra-broadband optical amplification.

  7. Dopant-induced stress in microfabricated silicon devices

    NASA Astrophysics Data System (ADS)

    Sievilä, P.; Mäkinen, J.; Tilli, M.; Tittonen, I.

    2013-07-01

    The modification of material characteristics by introducing dopant atoms into a crystal lattice is a fundamental basis for modern micro- and nanosystems technology. In this work, the uneven distribution of dopants is shown to have a remarkable effect on the residual stress and the consequent deformation of released, mechanical silicon structures. In particular, the focus is on segregation of initial dopants inside the bulk silicon which takes place in such fabrication processes as thermal oxidation. A theoretical model based on perceiving the dopant-induced change in Si crystal lattice parameter is developed. We experimentally investigate a series of silicon-on-insulator wafers, including samples with dopant types B, P, and Sb, and concentrations in the range from 1015 to 5 × 1019 atoms cm-3. Released cantilevers are fabricated as test structures and the residual stress is determined by measuring their final curvature. Experimental results are compared with the modelled values obtained utilizing the dopant profiles determined by secondary ion mass spectrometry and concentration distribution simulations. The use of lightly doped substrates or the selection of processes not modifying the underlying Si surface (e.g., plasma enhanced chemical vapour deposition PECVD or metal deposition) is shown to be an effective solution for minimizing the dopant redistribution-induced stress. Besides the scientific impact, knowledge of the stress generated by dopants is of great significance for industrial manufacturing of a wide range of micro- and nanomechanical systems.

  8. Dopant ink composition and method of fabricating a solar cell there from

    DOEpatents

    Loscutoff, Paul; Wu, Kahn; Molesa, Steven Edward

    2015-03-31

    Dopant ink compositions and methods of fabricating solar cells there from are described. A dopant ink composition may include a cross-linkable matrix precursor, a bound dopant species, and a solvent. A method of fabricating a solar cell may include delivering a dopant ink composition to a region above a substrate. The dopant ink composition includes a cross-linkable matrix precursor, a bound dopant species, and a solvent. The method also includes baking the dopant ink composition to remove a substantial portion of the solvent of the dopant ink composition, curing the baked dopant ink composition to cross-link a substantial portion of the cross-linkable matrix precursor of the dopant ink composition, and driving dopants from the cured dopant ink composition toward the substrate.

  9. Anomalous dynamics of interstitial dopants in soft crystals

    PubMed Central

    Tauber, Justin; Higler, Ruben; Sprakel, Joris

    2016-01-01

    The dynamics of interstitial dopants govern the properties of a wide variety of doped crystalline materials. To describe the hopping dynamics of such interstitial impurities, classical approaches often assume that dopant particles do not interact and travel through a static potential energy landscape. Here we show, using computer simulations, how these assumptions and the resulting predictions from classical Eyring-type theories break down in entropically stabilized body-centered cubic (BCC) crystals due to the thermal excitations of the crystalline matrix. Deviations are particularly severe close to melting where the lattice becomes weak and dopant dynamics exhibit strongly localized and heterogeneous dynamics. We attribute these anomalies to the failure of both assumptions underlying the classical description: (i) The instantaneous potential field experienced by dopants becomes largely disordered due to thermal fluctuations and (ii) elastic interactions cause strong dopant–dopant interactions even at low doping fractions. These results illustrate how describing nonclassical dopant dynamics requires taking the effective disordered potential energy landscape of strongly excited crystals and dopant–dopant interactions into account. PMID:27856751

  10. Local Lattice Structure and Dopant Occupancy of Doped Lithium Niobate Crystals

    NASA Astrophysics Data System (ADS)

    Zhang, Zhigang; Xue, Dongfeng

    We present a systematic study of the local distortions produced upon doping metal ions to lithium niobate (LiNbO3, LN) single crystals. The impurity bond length can be predicted by a radial force constant model, when the dopant ions substitute for Li+ or Nb5+ ions in the LN crystallographic frame. From the viewpoint of constituent chemical bonds, the lattice energy can be described as the function of bond valence on the basis of Born-Haber cycle for the formation of an ionic oxide MmOn. The dopant occupancy in the LN matrix can be determined by comparing the deviation of its lattice energy in different locations at both Li+ and Nb5+ sites, on the basis of the bond length relaxation of impurity ions, which can agree well with the experiment results. The effect of impurity ions on the property modification of LN crystals is also discussed according to our calculated results.

  11. Transition-metal dopants in tetrahedrally bonded semiconductors: Symmetry and exchange interactions from tight-binding models

    NASA Astrophysics Data System (ADS)

    Kortan, Victoria Ramaker

    It has become increasingly apparent that the future of electronic devices can and will rely on the functionality provided by single or few dopant atoms. The most scalable physical system for quantum technologies, i.e. sensing, communication and computation, are spins in crystal lattices. Diamond is an excellent host crystal offering long room temperature spin coherence times and there has been exceptional experimental work done with the nitrogen vacancy center in diamond demonstrating many forms of spin control. Transition metal dopants have additional advantages, large spin-orbit interaction and internal core levels, that are not present in the nitrogen vacancy center. This work explores the implications of the internal degrees of freedom associated with the core d levels using a tight-binding model and the Koster-Slater technique. The core d levels split into two separate symmetry states in tetrahedral bonding environments and result in two levels with different wavefunction spatial extents. For 4 d semiconductors, e.g. GaAs, this is reproduced in the tight-binding model by adding a set of d orbitals on the location of the transition metal impurity and modifying the hopping parameters from impurity to its nearest neighbors. This model does not work in the case of 3d semiconductors, e.g. diamond, where there is no physical reason to drastically alter the hopping from 3 d dopant to host and the difference in wavefunction extent is not as pronounced. In the case of iron dopants in gallium arsenide the split symmetry levels in the band gap are responsible for a decrease in tunneling current when measured with a scanning tunneling microscope due to interference between two elastic tunneling paths and comparison between wavefunction measurements and tight-binding calculations provides information regarding material parameters. In the case of transition metal dopants in diamond there is less distinction between the symmetry split d levels. When considering pairs of

  12. Diffusion of n-type dopants in germanium

    SciTech Connect

    Chroneos, A.; Bracht, H.

    2014-03-15

    Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation.

  13. Dopant morphology as the factor limiting graphene conductivity

    PubMed Central

    Hofmann, Mario; Hsieh, Ya-Ping; Chang, Kai-Wen; Tsai, He-Guang; Chen, Tzung-Te

    2015-01-01

    Graphene’s low intrinsic carrier concentration necessitates extrinsic doping to enhance its conductivity and improve its performance for application as electrodes or transparent conductors. Despite this importance limited knowledge of the doping process at application-relevant conditions exists. Employing in-situ carrier transport and Raman characterization of different dopants, we here explore the fundamental mechanisms limiting the effectiveness of doping at different doping levels. Three distinct transport regimes for increasing dopant concentration could be identified. First the agglomeration of dopants into clusters provides a route to increase the graphene conductivity through formation of ordered scatterers. As the cluster grows, the charge transfer efficiency between graphene and additional dopants decreases due to emerging polarization effects. Finally, large dopant clusters hinder the carrier motion and cause percolative transport that leads to an unexpected change of the Hall effect. The presented results help identifying the range of beneficial doping density and guide the choice of suitable dopants for graphene’s future applications. PMID:26617255

  14. Atom location by electron channeling analysis

    SciTech Connect

    Pennycook, S.J.

    1984-07-01

    For many years the orientation dependence of the characteristic x-ray emission close to a Bragg reflection has been regarded as a hindrance to accurate microanalysis, and a random incident beam direction has always been recommended for accurate composition analysis. However, this orientation dependence can be put to use to extract information on the lattice location of foreign atoms within the crystalline matrix. Here a generalization of the technique is described which is applicable to any crystal structure including monatomic crystals, and can quantitatively determine substitutional fractions of impurities. The technique was referred to as electron channeling analysis, by analogy with the closely related and widely used bulk technique of ion channeling analysis, and was developed for lattice location studies of dopants in semiconductors at high spatial resolution. Only two spectra are required for each channeling analysis, one in each of the channeling conditions described above. If the matrix and dopant x-ray yields vary identically between the two orientations then the dopant necessarily lies within the reflecting matrix planes. If the dopant x-ray yield does not vary the dopant atoms are randomly located with respect to the matrix planes. 10 references, 2 figures.

  15. Three dimensional mapping of Fe dopants in ceria nanocrystals using direct spectroscopic electron tomography.

    PubMed

    Goris, Bart; Meledina, Maria; Turner, Stuart; Zhong, Zhichao; Batenburg, K Joost; Bals, Sara

    2016-12-01

    Electron tomography is a powerful technique for the 3D characterization of the morphology of nanostructures. Nevertheless, resolving the chemical composition of complex nanostructures in 3D remains challenging and the number of studies in which electron energy loss spectroscopy (EELS) is combined with tomography is limited. During the last decade, dedicated reconstruction algorithms have been developed for HAADF-STEM tomography using prior knowledge about the investigated sample. Here, we will use the prior knowledge that the experimental spectrum of each reconstructed voxel is a linear combination of a well-known set of references spectra in a so-called direct spectroscopic tomography technique. Based on a simulation experiment, it is shown that this technique provides superior results in comparison to conventional reconstruction methods for spectroscopic data, especially for spectrum images containing a relatively low signal to noise ratio. Next, this technique is used to investigate the spatial distribution of Fe dopants in Fe:Ceria nanoparticles in 3D. It is shown that the presence of the Fe(2+) dopants is correlated with a reduction of the Ce atoms from Ce(4+) towards Ce(3+). In addition, it is demonstrated that most of the Fe dopants are located near the voids inside the nanoparticle.

  16. Method for enhancing the solubility of dopants in silicon

    DOEpatents

    Sadigh, Babak; Lenosky, Thomas J.; De La Rubia, Tomas Diaz

    2003-09-30

    A method for enhancing the equilibrium solid solubility of dopants in silicon, germanium and silicon-germanium alloys. The method involves subjecting silicon-based substrate to biaxial or compression strain. It has been determined that boron solubility was largely enhanced (more than 100%) by a compressive bi-axial strain, based on a size-mismatch theory since the boron atoms are smaller than the silicon atoms. It has been found that the large enhancement or mixing properties of dopants in silicon and germanium substrates is primarily governed by their, and to second order by their size-mismatch with the substrate. Further, it has been determined that the dopant solubility enhancement with strain is most effective when the charge and the size-mismatch of the impurity favor the same type of strain. Thus, the solid solubility of small p-type (e.g., boron) as well as large n-type (e.g., arsenic) dopants can be raised most dramatically by appropriate bi-axial (compressive) strain, and that solubility of a large p-type dopant (e.g, indium) in silicon will be raised due to size-mismatch with silicon, which favors tensile strain, while its negative charge prefers compressive strain, and thus the two effects counteract each other.

  17. Time-resolved single dopant charge dynamics in silicon

    PubMed Central

    Rashidi, Mohammad; Burgess, Jacob A. J.; Taucer, Marco; Achal, Roshan; Pitters, Jason L.; Loth, Sebastian; Wolkow, Robert A.

    2016-01-01

    As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal tool. However, dopant dynamics involve processes occurring at nanosecond timescales, posing a significant challenge to experiment. Here we use time-resolved scanning tunnelling microscopy and spectroscopy to probe and study transport through a dangling bond on silicon before the system relaxes or adjusts to accommodate an applied electric field. Atomically resolved, electronic pump-probe scanning tunnelling microscopy permits unprecedented, quantitative measurement of time-resolved single dopant ionization dynamics. Tunnelling through the surface dangling bond makes measurement of a signal that would otherwise be too weak to detect feasible. Distinct ionization and neutralization rates of a single dopant are measured and the physical process controlling those are identified. PMID:27782125

  18. Single-electron capacitance spectroscopy of individual dopants in silicon.

    PubMed

    Gasseller, M; DeNinno, M; Loo, R; Harrison, J F; Caymax, M; Rogge, S; Tessmer, S H

    2011-12-14

    Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of nanometers below the surface of a silicon sample. Using a capacitance-based approach, we have both spatially resolved individual subsurface boron acceptors and detected spectroscopically single holes entering and leaving these minute systems of atoms. A resonance identified as the B+ state is shown to shift in energy from acceptor to acceptor. We examine this behavior with respect to nearest-neighbor distances. By directly measuring the quantum levels and testing the effect of dopant-dopant interactions, this method represents a valuable tool for the development of future atomic-scale semiconductor devices.

  19. Spatial Distribution of Dopant Incorporation in CdTe

    SciTech Connect

    Guthrey, Harvey; Moseley, John; Colegrove, Eric; Burst, James; Albin, David; Metzger, Wyatt; Al-Jassim, Mowafak

    2016-11-21

    In this work we use state-of-the-art cathodoluminescence (CL) spectrum imaging that provides spectrum-per-pixel mapping of the CL emission to examine how dopant elements are incorporated into CdTe. Emission spectra and intensity are used to monitor the spatial distribution of additional charge carriers through characteristic variations in the CL emission based on theoretical modeling. Our results show that grain boundaries play a role in the incorporation of dopants in CdTe, whether intrinsic or extrinsic. This type of analysis is crucial for providing feedback to design different processing schedules that optimize dopant incorporation in CdTe photovoltaic material, which has struggled to reach high carrier concentration values. Here, we present results on CdTe films exposed to copper, phosphorus, and intrinsic doping treatments.

  20. Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET

    SciTech Connect

    Valin, R. Martinez, A.; Barker, J. R.

    2015-04-28

    In this paper, we study the effect of random discrete dopants on the performance of a 6.6 nm channel length silicon FinFET. The discrete dopants have been distributed randomly in the source/drain region of the device. Due to the small dimensions of the FinFET, a quantum transport formalism based on the non-equilibrium Green's functions has been deployed. The transfer characteristics for several devices that differ in location and number of dopants have been calculated. Our results demonstrate that discrete dopants modify the effective channel length and the height of the source/drain barrier, consequently changing the channel control of the charge. This effect becomes more significant at high drain bias. As a consequence, there is a strong effect on the variability of the on-current, off-current, sub-threshold slope, and threshold voltage. Finally, we have also calculated the mean and standard deviation of these parameters to quantify their variability. The obtained results show that the variability at high drain bias is 1.75 larger than at low drain bias. However, the variability of the on-current, off-current, and sub-threshold slope remains independent of the drain bias. In addition, we have found that a large source to drain current by tunnelling current occurs at low gate bias.

  1. Redistribution of Implanted Dopants in GaN

    SciTech Connect

    Fu, M.; Gao, X.A.; Han, J.; Pearton, S.J.; Rieger, D.J.; Scarvepalli, V. Sekhar, J.A.; Shul, R.J.; Singh, R.K.; Wilson, R.G.; Zavada, J.M.; Zolper, J.C.

    1998-11-20

    Donor (S, Se and Te) and acceptor (Mg, Be and C) dopants have been implanted into GaN at doses of 3-5x1014 cm-2 and annealed at temperatures up to 1450 *C. No redistribution of any of the elements is detectable by Secondary Ion Mass Spectrometry, except for Be, which displays an apparent damage-assisted diffusion at 900 "C. At higher temperatures there is no further movement of the Be, suggesting that the point defect flux that assists motion at lower temperatures has been annealed. Effective diffusivities are <2X 1013 cm2.sec-1 at 1450 `C for each of the dopants in GaN.

  2. Sodium dopants in helium clusters: Structure, equilibrium and submersion kinetics

    SciTech Connect

    Calvo, F.

    2015-12-31

    Alkali impurities bind to helium nanodroplets very differently depending on their size and charge state, large neutral or charged dopants being wetted by the droplet whereas small neutral impurities prefer to reside aside. Using various computational modeling tools such as quantum Monte Carlo and path-integral molecular dynamics simulations, we have revisited some aspects of the physical chemistry of helium droplets interacting with sodium impurities, including the onset of snowball formation in presence of many-body polarization forces, the transition from non-wetted to wetted behavior in larger sodium clusters, and the kinetics of submersion of small dopants after sudden ionization.

  3. Encoding abrupt and uniform dopant profiles in vapor-liquid-solid nanowires by suppressing the reservoir effect of the liquid catalyst.

    PubMed

    Christesen, Joseph D; Pinion, Christopher W; Zhang, Xing; McBride, James R; Cahoon, James F

    2014-11-25

    Semiconductor nanowires (NWs) are often synthesized by the vapor-liquid-solid (VLS) mechanism, a process in which a liquid droplet-supplied with precursors in the vapor phase-catalyzes the growth of a solid, crystalline NW. By changing the supply of precursors, the NW composition can be altered as it grows to create axial heterostructures, which are applicable to a range of technologies. The abruptness of the heterojunction is mediated by the liquid catalyst, which can act as a reservoir of material and impose a lower limit on the junction width. Here, we demonstrate that this "reservoir effect" is not a fundamental limitation and can be suppressed by selection of specific VLS reaction conditions. For Au-catalyzed Si NWs doped with P, we evaluate dopant profiles under a variety of synthetic conditions using a combination of elemental imaging with energy-dispersive X-ray spectroscopy and dopant-dependent wet-chemical etching. We observe a diameter-dependent reservoir effect under most conditions. However, at sufficiently slow NW growth rates (≤250 nm/min) and low reactor pressures (≤40 Torr), the dopant profiles are diameter independent and radially uniform with abrupt, sub-10 nm axial transitions. A kinetic model of NW doping, including the microscopic processes of (1) P incorporation into the liquid catalyst, (2) P evaporation from the catalyst, and (3) P crystallization in the Si NW, quantitatively explains the results and shows that suppression of the reservoir effect can be achieved when P evaporation is much faster than P crystallization. We expect similar reaction conditions can be developed for other NW systems and will facilitate the development of NW-based technologies that require uniform and abrupt heterostructures.

  4. Multiple dopant injection system for small rocket engines

    NASA Technical Reports Server (NTRS)

    Sakala, G. G.; Raines, N. G.

    1992-01-01

    The Diagnostics Test Facility (DTF) at NASA's Stennis Space Center (SSC) was designed and built to provide a standard rocket engine exhaust plume for use in the research and development of engine health monitoring instrumentation. A 1000 lb thrust class liquid oxygen (LOX)-gaseous hydrogen (GH2) fueled rocket engine is used as the subscale plume source to simulate the SSME during experimentation and instrument development. The ability of the DTF to provide efficient, and low cost test operations makes it uniquely suited for plume diagnostic experimentation. The most unique feature of the DTF is the Multiple Dopant Injection System (MDIS) that is used to seed the exhaust plume with the desired element or metal alloy. The dopant injection takes place at the fuel injector, yielding a very uniform and homogeneous distribution of the seeding material in the exhaust plume. The MDIS allows during a single test firing of the DTF, the seeding of the exhaust plume with up to three different dopants and also provides distilled water base lines between the dopants. A number of plume diagnostic-related experiments have already utilized the unique capabilities of the DTF.

  5. Dopant profiling in the TEM, progress towards quantitative electron holography

    SciTech Connect

    Cooper, David; Truche, Robert; Chabli, Amal; Twitchett-Harrison, Alison C.; Midgley, Paul A.; Dunin-Borkowski, Rafal E.

    2007-09-26

    Off-axis electron holography has been used to characterise the dopant potential in GaAs p-n junctions. We show that the measured potential across the junctions is affected by both FIB specimen preparation and by charging in the TEM and suggest methods that can be used to minimise these problems.

  6. Functional dopant profiling of optical coherent transient materials

    NASA Astrophysics Data System (ADS)

    Kiruluta, Andrew J. M.

    A new novel method that functionally maps the distribution of dopants in a photon echo material is proposed that relies on imposing a set of linear orthogonal gradient magnetic fields for a controlled hyperfine splitting of energy levels to create characteristic quantum beats when illuminated with a laser pulse with sufficient bandwidth to interrogate these levels. In this approach, a spectroscopic finger print of the dopant sites due to concentration and field susceptibilities in the sample is achieved through a Fourier decomposition of the radiative relaxation decay in an approach analogous to nuclear magnetic resonance (NMR) spectroscopy due to the imposition of a controlled spatial-spectral encoding scheme. An example of such an interrogative approach uses a three pulse stimulated sequence necessary to probe a gradient resolved voxel. This three pulse approach can be combined with the conventional confocal imaging technique to provide information about the underlying chemistry of dopant distribution along each imaging plane which is useful in guiding the design and manufacturing process of optical crystals. In combination with gradient induced quantum beats, the entire inhomogeneous bandwidth can be interrogated. The proposed approach would scan this entire bandwidth at much faster rate enabling characterization of a large number of crystals than is currently possible through mechanical scanning with a confocal microscopy based spectroscopic technique as well as providing functional dopant profiling which is not currently possible with conventional approaches.

  7. Structure and segregation of dopant-defect complexes at grain boundaries in nanocrystalline doped ceria.

    PubMed

    Dholabhai, Pratik P; Aguiar, Jeffery A; Wu, Longjia; Holesinger, Terry G; Aoki, Toshihiro; Castro, Ricardo H R; Uberuaga, Blas P

    2015-06-21

    Grain boundaries (GBs) dictate vital properties of nanocrystalline doped ceria. Thus, to understand and predict its properties, knowledge of the interaction between dopant-defect complexes and GBs is crucial. Here, we report atomistic simulations, corroborated with first principles calculations, elucidating the fundamental dopant-defect interactions at model GBs in gadolinium-doped and manganese-doped ceria. Gadolinium and manganese are aliovalent dopants, accommodated in ceria via a dopant-defect complex. While the behavior of isolated dopants and vacancies is expected to depend on the local atomic structure at GBs, the added structural complexity associated with dopant-defect complexes is found to have key implications on GB segregation. Compared to the grain interior, energies of different dopant-defect arrangements vary significantly at the GBs. As opposed to bulk, the stability of oxygen vacancy is found to be sensitive to the dopant arrangement at GBs. Manganese exhibits a stronger propensity for segregation to GBs than gadolinium, revealing that accommodation of dopant-defect clusters depends on the nature of dopants. Segregation strength is found to depend on the GB character, a result qualitatively supported by our experimental observations based on scanning transmission electron microscopy. The present results indicate that segregation energies, availability of favorable sites, and overall stronger binding of dopant-defect complexes would influence ionic conductivity across GBs in nanocrystalline doped ceria. Our comprehensive investigation emphasizes the critical role of dopant-defect interactions at GBs in governing functional properties in fluorite-structured ionic conductors.

  8. Simulation and bonding of dopants in nanocrystalline diamond.

    PubMed

    Barnard, A S; Russo, S P; Snook, I K

    2005-09-01

    The doping of the wide-band gap semiconductor diamond has led to the invention of many electronic and optoelectronic devices. Impurities can be introduced into diamond during chemical vapor deposition or high pressure-high temperature growth, resulting in materials with unusual physical and chemical properties. For electronic applications one of the main objectives in the doping of diamond is the production of p-type and n-type semiconductors materials; however, the study of dopants in diamond nanoparticles is considered important for use in nanodevices, or as qubits for quantum computing. Such devices require that bonding of dopants in nanodiamond must be positioned substitutionally at a lattice site, and must exhibit minimal or no possibility of diffusion to the nanocrystallite surface. In light of these requirements, a number of computational studies have been undertaken to examine the stability of various dopants in various forms of nanocrystalline diamond. Presented here is a review of some such studies, undertaken using quantum mechanical based simulation methods, to provide an overview of the crystal stability of doped nanodiamond for use in diamondoid nanodevices.

  9. Cation dopant distributions in nanostructures of transition-metal doped ZnO:Monte Carlo simulations

    SciTech Connect

    Droubay, Timothy C.; Kaspar, Tiffany C.; Kaspar, Bryce P.; Chambers, Scott A.

    2009-02-01

    The path from trace doping to solid solution formation involves an intermediate regime in which the doping level is a few to several atomic percent. In this regime, dopant-dopant interactions, which are driven by the spatial arrangement of dopants, are critical factors in determining the resulting properties. Conventional wisdom counts on simple probabilistic methods for predicting dopant distributions. Here, we use Monte Carlo simulations to show that widely used, straightforward statistical models, such as that of Behringer1, are accurate only in the limit of infinitesimally small surface–to-volume ratio. For epitaxial films and nanoparticles, where much of the current interest resides, dopant distributions depend strongly on the surface-to-volume ratio. We present empirical expressions that accurately predict dopant bonding configurations as a function of film or particle size, shape and dopant concentration for doped ZnO, a material of particular interest in semiconductor spintronics.

  10. Photoluminescence imaging of solitary dopant sites in covalently doped single-wall carbon nanotubes

    SciTech Connect

    Hartmann, Nicolai F.; Yalcin, Sibel Ebru; Adamska, Lyudmyla; Haroz, Erik H.; Ma, Xuedan; Tretiak, Sergei; Htoon, Han; Doorn, Stephen K.

    2015-11-11

    Covalent dopants in semiconducting single wall carbon nanotubes (SWCNTs) are becoming important as routes for introducing new photoluminescent emitting states with potential for enhanced quantum yields, new functionality, and as species capable of near-IR room-temperature single photon emission. The origin and behavior of the dopant-induced emission is thus important to understand as a key requirement for successful room-T photonics and optoelectronics applications. Here, we use direct correlated two-color photoluminescence imaging to probe how the interplay between the SWCNT bright E11 exciton and solitary dopant sites yields the dopant-induced emission for three different dopant species: oxygen, 4-methoxybenzene, and 4-bromobenzene. We introduce a route to control dopant functionalization to a low level as a means for introducing spatially well-separated solitary dopant sites. Resolution of emission from solitary dopant sites and correlation to their impact on E11 emission allows confirmation of dopants as trapping sites for localization of E11 excitons following their diffusive transport to the dopant site. Imaging of the dopant emission also reveals photoluminescence intermittency (blinking), with blinking dynamics being dependent on the specific dopant. Density functional theory calculations were performed to evaluate the stability of dopants and delineate the possible mechanisms of blinking. Furthermore, theoretical modeling suggests that the trapping of free charges in the potential well created by permanent dipoles introduced by dopant atoms/groups is likely responsible for the blinking, with the strongest effects being predicted and observed for oxygen-doped SWCNTs.

  11. Photoluminescence imaging of solitary dopant sites in covalently doped single-wall carbon nanotubes

    DOE PAGES

    Hartmann, Nicolai F.; Yalcin, Sibel Ebru; Adamska, Lyudmyla; ...

    2015-11-11

    Covalent dopants in semiconducting single wall carbon nanotubes (SWCNTs) are becoming important as routes for introducing new photoluminescent emitting states with potential for enhanced quantum yields, new functionality, and as species capable of near-IR room-temperature single photon emission. The origin and behavior of the dopant-induced emission is thus important to understand as a key requirement for successful room-T photonics and optoelectronics applications. Here, we use direct correlated two-color photoluminescence imaging to probe how the interplay between the SWCNT bright E11 exciton and solitary dopant sites yields the dopant-induced emission for three different dopant species: oxygen, 4-methoxybenzene, and 4-bromobenzene. We introducemore » a route to control dopant functionalization to a low level as a means for introducing spatially well-separated solitary dopant sites. Resolution of emission from solitary dopant sites and correlation to their impact on E11 emission allows confirmation of dopants as trapping sites for localization of E11 excitons following their diffusive transport to the dopant site. Imaging of the dopant emission also reveals photoluminescence intermittency (blinking), with blinking dynamics being dependent on the specific dopant. Density functional theory calculations were performed to evaluate the stability of dopants and delineate the possible mechanisms of blinking. Furthermore, theoretical modeling suggests that the trapping of free charges in the potential well created by permanent dipoles introduced by dopant atoms/groups is likely responsible for the blinking, with the strongest effects being predicted and observed for oxygen-doped SWCNTs.« less

  12. The Effect of Rare Earth Dopants on UO2 Oxidation

    SciTech Connect

    Hanson, Brady D.; Cumblidge, Stephen E.; Scheele, Randall D.; Sell, Rachel L.

    2003-06-01

    Recent work by Hanson [1] has demonstrated a clear dependence of the oxidation of Light Water Reactor spent fuel on burnup. Oxidation of spent fuel was shown to proceed via the two-step reaction UO2?UO2.4?UO2.67+x, where the U3O8-like phase does not form until conversion to UO2.4 is complete. The temperature-dependent activation energy (Ea) of the transition from UO2.4 to the hyperstoichiometric U3O8 was found to be {approx}150 kJ mol-1. Each MWD/kg M burnup added {approx}1.0 kJ mol-1. The work of McEachern et.al. [2], Choi et. al. [3], and You et. al. [4] have all verified this oxidation dependence on SIMFUEL or unirradiated doped-UO2. All present work agrees that the soluble actinides or fission products that substitute in the U matrix act to delay the onset of U3O8. However, no single model exists to explain the observed behavior, including the fact that most dopants actually allow an earlier onset for UO2.4 formation. The present work is part of a Nuclear Energy Research Initiative project attempting to develop a UO2-based matrix capable of achieving extended burnups by including soluble dopants. The resulting fuel should be highly oxidation and dissolution resistant, which will be beneficial during accident scenarios or for disposal in a geologic repository. In addition, the stabilized matrix may help delay the onset of fuel restructuring that occurs at higher burnups. Initial results of the oxidation tests to quantify effects as a function of ionic radii and charge of the dopant are presented.

  13. A theoretical study of dopant atom detection and probe behavior in STEM

    NASA Astrophysics Data System (ADS)

    Mittal, Anudha

    Very detailed information about the atomic and electronic structure of materials can be obtained via atomic-scale resolution scanning transmission electron microscopy (STEM). These experiments reach the limits of current microscopes, which means that optimal experimental design is a key ingredient in success. The step following experiment, extraction of information from experimental data is also complex. Comprehension of experimental data depends on comparison with simulated data and on fundamental understanding of aspects of scattering behavior. The research projects discussed in this thesis are formulated within three large concepts. 1. Usage of simulation to suggest experimental technique for observation of a particular structural feature.. Two specific structural features are explored. One is the characterization of a substitutional dopant atom in a crystal. Annular dark field scanning transmission electron microscope (ADF-STEM) images allow detection of individual dopant atoms in a crystal based on contrast between intensities of doped and non-doped column in the image. The magnitude of the said contrast is heavily influenced by specimen and microscope parameters. Analysis of multislice-based simulations of ADF-STEM images of crystals doped with one substitutional dopant atom for a wide range of crystal thicknesses, types and locations of dopant atom inside the crystal, and crystals with different atoms revealed trends and non-intuitive behaviors in visibility of the dopant atom. The results provide practical guidelines for the optimal experimental setup regarding both the microscope and specimen conditions in order to characterize the presence and location of a dopant atom. Furthermore, the simulations help in recognizing the cases where detecting a single dopant atom via ADF-STEM imaging is not possible. The second is a more specific case of detecting intrinsic twist in MoS2 nanotubes. Objective molecular dynamics simulations coupled with a density

  14. Charge-transfer crystallites as molecular electrical dopants

    PubMed Central

    Méndez, Henry; Heimel, Georg; Winkler, Stefanie; Frisch, Johannes; Opitz, Andreas; Sauer, Katrein; Wegner, Berthold; Oehzelt, Martin; Röthel, Christian; Duhm, Steffen; Többens, Daniel; Koch, Norbert; Salzmann, Ingo

    2015-01-01

    Ground-state integer charge transfer is commonly regarded as the basic mechanism of molecular electrical doping in both, conjugated polymers and oligomers. Here, we demonstrate that fundamentally different processes can occur in the two types of organic semiconductors instead. Using complementary experimental techniques supported by theory, we contrast a polythiophene, where molecular p-doping leads to integer charge transfer reportedly localized to one quaterthiophene backbone segment, to the quaterthiophene oligomer itself. Despite a comparable relative increase in conductivity, we observe only partial charge transfer for the latter. In contrast to the parent polymer, pronounced intermolecular frontier-orbital hybridization of oligomer and dopant in 1:1 mixed-stack co-crystallites leads to the emergence of empty electronic states within the energy gap of the surrounding quaterthiophene matrix. It is their Fermi–Dirac occupation that yields mobile charge carriers and, therefore, the co-crystallites—rather than individual acceptor molecules—should be regarded as the dopants in such systems. PMID:26440403

  15. Nanowire dopant measurement using secondary ion mass spectrometry

    SciTech Connect

    Chia, A. C. E.; Boulanger, J. P.; Wood, B. A.; LaPierre, R. R.; Dhindsa, N.; Saini, S. S.

    2015-09-21

    A method is presented to improve the quantitative determination of dopant concentration in semiconductor nanowire (NW) arrays using secondary ion mass spectrometry (SIMS). SIMS measurements were used to determine Be dopant concentrations in a Be-doped GaAs thin film and NW arrays of various pitches that were dry-etched from the same film. A comparison of these measurements revealed a factor of 3 to 12 difference, depending on the NW array pitch, between the secondary Be ion yields of the film and the NW arrays, despite being identically doped. This was due to matrix effects and ion beam mixing of Be from the NWs into the surrounding benzocyclobutene that was used to fill the space between the NWs. This indicates the need for etched NWs to be used as doping standards instead of 2D films when evaluating NWs of unknown doping by SIMS. Using the etched NWs as doping standards, NW arrays of various pitches grown by the vapour-liquid-solid mechanism were characterized by SIMS to yield valuable insights into doping mechanisms.

  16. Location Privacy

    NASA Astrophysics Data System (ADS)

    Meng, Xiaofeng; Chen, Jidong

    With rapid development of sensor and wireless mobile devices, it is easy to access mobile users' location information anytime and anywhere. On one hand, LBS is becoming more and more valuable and important. On the other hand, location privacy issues raised by such applications have also gained more attention. However, due to the specificity of location information, traditional privacy-preserving techniques in data publishing cannot be used. In this chapter, we will introduce location privacy, and analyze the challenges of location privacy-preserving, and give a survey of existing work including the system architecture, location anonymity and query processing.

  17. Towards chiral distributions of dopants in microporous frameworks: helicoidal supramolecular arrangement of (1R,2S)-ephedrine and transfer of chirality.

    PubMed

    Gómez-Hortigüela, Luis; Álvaro-Muñoz, Teresa; Bernardo-Maestro, Beatriz; Pérez-Pariente, Joaquín

    2015-01-07

    A molecular-mechanics computational study is performed in order to analyze the arrangement of (1R,2S)-(-)-ephedrine molecules within the 12-MR channels of the AFI aluminophosphate microporous framework and the influence on the spatial distribution of dopants embedded in the tetrahedral network. Results showed that ephedrine molecules arrange exclusively as dimers by π-π stacking of the aromatic rings within the AFI channels. Interestingly, the asymmetric nature of ephedrine and the presence of H-bond-forming groups (NH2 and OH) involve a preferential orientation where consecutive dimers within the channels are rotated by an angle of +30°; this is driven by the establishment of inter-dimer H-bonds. This preferential orientation leads to the development of a supramolecular enantiomerically-pure helicoidal (chiral) arrangement of ephedrine dimers. In addition, the computational results demonstrate that the particular molecular structure of ephedrine imparts a strong trend to attract negative charges to the vicinity of the NH2(+) positively-charged groups. Hence divalent dopants such as Mg, whose replacement by trivalent Al in the aluminophosphate network involves the generation of a negative charge, will tend to locate close to the NH2(+) molecular groups, suggesting that an imprinting of the organic arrangement to the spatial distribution of dopants would be feasible. Combined with the trend of ephedrine to arrange in a helicoidal fashion, an enantiomerically-pure helicoidal distribution of dopants would be expected, thus inducing a new type of chirality in microporous materials.

  18. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

    SciTech Connect

    Mitoma, Nobuhiko E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Kizu, Takio; Lin, Meng-Fang; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Ou-Yang, Wei; Gao, Xu; Fujiwara, Akihiko

    2015-01-26

    The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO{sub x}) thin film transistors (TFTs) is reported. In a-InO{sub x} TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO{sub x} matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO{sub x} TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

  19. Behavior of volatile dopants (P, Sb) in Czochralski silicon growth

    NASA Astrophysics Data System (ADS)

    Porrini, M.; Scala, R.; Voronkov, V. V.

    2017-02-01

    The evaporation from the silicon melt, during Czochralski process, is an important effect for Phosphorus and Antimony dopants. The evaporation rate γ was deduced from the measured axial profile of the resistivity converted into the concentration. For the heavily doped crystals, the value of γ is very similar for both P and Sb: in the order of 5.5×10-5 cm/s (which is significantly lower than the previously reported evaporation rates). It was concluded that the rate-limiting step for the evaporation process is neither the evaporation reaction itself nor the impurity transport through the flowing gas, but rather the transport through the melt that strongly depends on the melt convection. For low Phosphorus concentration, the transport through the gas is severely slowed-down - due to a change in the dominant gaseous species, from P2 to P1 - and becomes a limiting step. The evaporation rate is decreased and, in fact, becomes negligible.

  20. Nanocarbon for Oxygen Reduction Electrocatalysis: Dopants, Edges, and Defects.

    PubMed

    Tang, Cheng; Zhang, Qiang

    2017-01-09

    The oxygen reduction reaction (ORR) is the cornerstone of various sustainable energy-conversion technologies. Metal-free nanocarbon electrocatalysts with competitive activity, enhanced durability, and satisfactory cost, have been proposed as the most promising substitute for precious-metal catalysts. However, their further development is still primarily based on trial-and-error approaches due to the controversial knowledge of critical active sites and mechanisms. Herein, the activity origins of nanocarbon-based ORR electro-catalysts are comprehensively reviewed and correlated, considering the dopants, edges, and defects. Analogously, they can effectively modify the charge/spin distribution on the sp(2) -conjugated carbon matrix, leading to optimized intermediate chemisorption and facilitated electron transfer. Specific doping at defective edges is expected to render practical applications for metal-free nanocarbon electrocatalysts.

  1. Accurate measurement of the helical twisting power of chiral dopants

    NASA Astrophysics Data System (ADS)

    Kosa, Tamas; Bodnar, Volodymyr; Taheri, Bahman; Palffy-Muhoray, Peter

    2002-03-01

    We propose a method for the accurate determination of the helical twisting power (HTP) of chiral dopants. In the usual Cano-wedge method, the wedge angle is determined from the far-field separation of laser beams reflected from the windows of the test cell. Here we propose to use an optical fiber based spectrometer to accurately measure the cell thickness. Knowing the cell thickness at the positions of the disclination lines allows determination of the HTP. We show that this extension of the Cano-wedge method greatly increases the accuracy with which the HTP is determined. We show the usefulness of this method by determining the HTP of ZLI811 in a variety of hosts with negative dielectric anisotropy.

  2. Influence of dopants on defect formation in GaN

    SciTech Connect

    Liliental-Weber, Z.; Jasinski, J.; Benamara, M.; Grzegory, I.; Porowski, S.; Lampert, D.J.H.; Eiting, C.J.; Dupuis R.D.

    2001-10-15

    Influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN:Mg and GaN:Be crystals grown by a high pressure and high temperature process and GaN:Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering in bulk GaN:Mg on c-plane (formation of Mg-rich planar defects with characteristics of inversion domains) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) Mg-rich pyramidal defects empty inside (pinholes) were observed. Both these defects were also observed in MOCVD grown crystals. Pyramidal defects were also observed in the bulk GaN:Be crystals.

  3. Mechanism for Increasing Dopant Incorporation in Semiconductors Via Doped Nanostructures

    SciTech Connect

    Kuskovsky,I.; Gu, Y.; Gong, Y.; Yan, H.; Lau, J.; Noyan, I.; Neumark, G.; Maksimov, O.; Zhou, X.; et al.

    2006-01-01

    A long-standing problem for ZnSe (and related alloys) has been to obtain good p-type doping. Recent work has given about an order-of-magnitude improvement in such doping by use of Te as a 'codopant' to facilitate the introduction of an acceptor dopant (N), since it is known that p-ZnTe can be obtained quite readily; the Te was introduced in submonolayer quantities via planar ({delta}) doping during molecular beam epitaxy. Here, we examine the mechanism of this improved doping. We show that it resides in the formation of ZnTe-rich nanoislands, with the N embedded in these. This result is obtained by studies involving transmission electron microscopy, high-resolution x-ray diffraction, secondary-ion mass spectroscopy, and temperature quenching of photoluminescence. We note that these nanoislands appear quite unique, in providing doping of semiconductors, and thus are of great interest of their own.

  4. Recognizing nitrogen dopant atoms in graphene using atomic force microscopy

    NASA Astrophysics Data System (ADS)

    van der Heijden, Nadine J.; Smith, Daniël; Calogero, Gaetano; Koster, Rik S.; Vanmaekelbergh, Daniel; van Huis, Marijn A.; Swart, Ingmar

    2016-06-01

    Doping graphene by heteroatoms such as nitrogen presents an attractive route to control the position of the Fermi level in the material. We prepared N-doped graphene on Cu(111) and Ir(111) surfaces via chemical vapor deposition of two different molecules. Using scanning tunneling microscopy images as a benchmark, we show that the position of the dopant atoms can be determined using atomic force microscopy. Specifically, the frequency shift-distance curves Δ f (z ) acquired above a N atom are significantly different from the curves measured over a C atom. Similar behavior was found for N-doped graphene on Cu(111) and Ir(111). The results are corroborated by density functional theory calculations employing a van der Waals functional.

  5. Effective distribution coefficient of silicon dopants during magnetic Czochralski growth

    NASA Astrophysics Data System (ADS)

    Series, R. W.; Hurle, D. T. J.; Barraclough, K. G.

    1985-09-01

    Silicon crystals have been grown under axial magnetic fields of up to 0.2 T. At 0.05 T the field starts to interact with the melt and dopant incorporation becomes erratic. As the field is increased to 0.2 T the interaction becomes more controlled and it is seen that the effective distribution coefficient (keff) moves towards unity. A theory based on the analysis by Burton, Prim and Slichter of the dependence of the effective distribution coefficient (keff) on growth and crystal rotation rates in Czochralski growth is extended to include the effect of an imposed steady axial magnetic field. The flow fields incorporated into the theory are based on the analysis of the hydromagnetic flow at a rotating disc due to Kakutani (1962). It is shown that keff approaches unity as the field increases.

  6. Dopant gas effect on silicon chemical vapor depositions: A surface potential model

    NASA Technical Reports Server (NTRS)

    Chang, C. A.

    1975-01-01

    A surface potential model is proposed to consistently explain the known dopant gas effects on silicon chemical vapor deposition. This model predicts that the effects of the same dopant gases on the diamond deposition rate using methane and carbon tetrachloride should be opposite and similar to those of silane, respectively. Available data are in agreement with this prediction.

  7. Towards bipolar atomic scale dopant devices defined by STM-lithography

    NASA Astrophysics Data System (ADS)

    Fuhrer, Andreas; Köster, Sigrun; Pascher, Nikola

    2015-03-01

    Dopant device fabrication with hydrogen resist lithography has been demonstrated only for n-type dopants. The reason for this is the ease with which phosphorus can be incorporated and activated after gas phase doping with phosphine. Specifically, incorporation on the silicon (001) surface can be achieved at 350°C while keeping the hydrogen resist intact and thus avoiding surface diffusion of the dopants. Here, we present new results on p-type δ-doping of silicon, towards the fabrication of bipolar dopant devices with hydrogen resist lithography. Using diborane as a gas-phase dopant source, Hall bar devices were fabricated to extract hole densities and mobilities in cryogenic magneto-transport experiments. Furthermore, the dependence of these parameters on diborane dose and dopant activation temperatures is investigated. We find that gas-phase doping with diborane is compatible with hydrogen resist lithography and dopant structures can be patterned using the STM. However, activation of the boron dopants currently still leads to significant diffusion and therefore blurring of the patterned devices. We will discuss the prospects of further optimising this and present a possible path forward towards bipolar atomic scale device fabrication with the STM. Support from EU grants PAMS, SiSpin, SiAM and from Swiss NCCR QSIT is gratefully acknowledged.

  8. Defect and dopant properties of MgTa{sub 2}O{sub 6}

    SciTech Connect

    Tealdi, Cristina; Saiful Islam, M.; Malavasi, Lorenzo . E-mail: lorenzo.malavasi@unipv.it; Flor, Giorgio

    2004-11-01

    Atomistic computer simulation techniques have been used, for the first time, to reproduce the crystal structure of MgTa{sub 2}O{sub 6} and to investigate the defect chemistry and dopant properties of this material. The calculated defect energetics suggest that the concentration of intrinsic atomic defects in this phase is insignificant and that the system is probably stable to both oxidation and reduction. Dopant solution energy versus ion size trends are found for both isovalent and aliovalent dopant incorporation at Mg and Ta sites. Divalent dopants (e.g. Ca, Cu) preferentially occupy the Mg site whereas dopants with higher charge (e.g. Sc, Zr, Nb) are more favorable on the Ta site. High migration activation energies (>2eV) predict limited ionic conductivity in this material.

  9. The effect of dopant incorporation on the elastic properties of Ti metal

    NASA Astrophysics Data System (ADS)

    Wilson, N. C.; McGregor, K.; Gibson, M. A.; Russo, S. P.

    2015-01-01

    The effect of dopant atoms on the structural and elastic properties of α titanium is examined through the use of density functional theory. The effect of 66 dopant atoms, from H through the third row transition metal elements, were considered in this study. In all cases the dopant concentration was approximately 3 at%, with substitutional incorporation investigated for all atoms considered and interstitial incorporation investigated for a smaller subset of elements. Interstitial incorporation was calculated to be more energetically favourable for the elements H, B to F, S and Cl with these dopants coordinating octahedrally with the surrounding Ti atoms, while substitutional incorporation was found to be more stable for the other elements. The five independent single crystal elastic constants are calculated, along with the bulk and shear moduli. The energetics and mechanically stability associated with the alloying of various dopants is also discussed.

  10. Femtosecond-laser hyperdoping silicon in an SF{sub 6} atmosphere: Dopant incorporation mechanism

    SciTech Connect

    Sher, Meng-Ju; Mangan, Niall M.; Lin, Yu-Ting; Brenner, Michael P.; Smith, Matthew J.; Gradečak, Silvija; Marbach, Sophie; Schneider, Tobias M.; Mazur, Eric

    2015-03-28

    In this paper, we examine the fundamental processes that occur during femtosecond-laser hyperdoping of silicon with a gas-phase dopant precursor. We probe the dopant concentration profile as a function of the number of laser pulses and pressure of the dopant precursor (sulfur hexafluoride). In contrast to previous studies, we show the hyperdoped layer is single crystalline. From the dose dependence on pressure, we conclude that surface adsorbed molecules are the dominant source of the dopant atoms. Using numerical simulation, we estimate the change in flux with increasing number of laser pulses to fit the concentration profiles. We hypothesize that the native oxide plays an important role in setting the surface boundary condition. As a result of the removal of the native oxide by successive laser pulses, dopant incorporation is more efficient during the later stage of laser irradiation.

  11. Comparison of Boron diffused emitters from BN, BSoD and H3BO3 dopants

    NASA Astrophysics Data System (ADS)

    Singha, Bandana; Singh Solanki, Chetan

    2016-12-01

    In this work, we are comparing different limited boron dopant sources for the emitter formation in n-type c-Si solar cells. High purity boric acid solution, commercially available boron spin on dopant and boron nitride solid source are used for comparison of emitter doping profiles for the same time and temperature conditions of diffusion. The characterizations done for the similar sheet resistance values for all the dopant sources show different surface morphologies and different device parameters. The measured emitter saturation current densities (Joe) are more than 20 fA cm-2 for all the dopant sources. The bulk carrier lifetimes measured for different diffusion conditions and different solar cell parameters for the similar sheet resistance values show the best result for boric acid diffusion and the least for BN solid source. So, different dopant sources result in different emitter and cell performances.

  12. Optical characterizations of doped silicon nanocrystals grown by co-implantation of Si and dopants in SiO₂

    SciTech Connect

    Frégnaux, M.; Khelifi, R.; Muller, D.; Mathiot, D.

    2014-10-14

    Co-implantation, with overlapping implantation projected ranges, of Si and doping species (P, As, and B) followed by a thermal annealing step is a viable route to form doped Si nanocrystals (NCs) embedded in silica (SiO₂). In this paper, we investigate optical characterizations of both doped and un-doped Si-NCs prepared by this method. The effective NC presence in the oxide layer and their crystallinity is verified by Raman spectrometry. Photoluminescence (PL) and PL excitation measurements reveal quantum confinement effects and a gradual PL quenching with increasing dopant concentrations. In un-doped NC, the measured Stokes shift remains constant and its value ~0.2 eV is almost twice the Si–O vibration energy. This suggests that a possible radiative recombination path is a fundamental transition assisted by a local phonon. PL lifetime investigations show that PL time-decays follow a stretched exponential. Using a statistical model for luminescence quenching, a typical NC diameter close to 2 nm is obtained for As- and P-doped samples, consistent with our previous atomic probe tomography (APT) analyses. APT also demonstrated that n-type dopant (P and As) are efficiently introduced in the NC core, whereas p-type dopant (B) are located at the NC/SiO₂ interface. This last observation could explain the failure of the luminescence-quenching model to determine NC size in B-doped samples. All together, these experimental observations question on possible different carrier recombination paths in P or As doped NC compared to B one's.

  13. First-principles Study of the NiGe/Ge Schottky Barrier Height under Dopant Segregation

    NASA Astrophysics Data System (ADS)

    Lin, Chiung-Yuan; Lin, Han-Chi

    2015-03-01

    Traditional Si-based MOSFETs are approaching its fundamental scaling limits, and Ge has been comprehensively explored as a potential channel material to replace Si due to its high intrinsic carrier mobility for further performance enhancement. Nevertheless, strong Fermi-level pinning near the valence band edge of Ge leads to high electron Schottky barrier height. Dopant segregation technique has been proposed to achieve shallower junction depth and heavier dopant concentration for NiGe/Ge. However, the role of dopants at the NiGe/Ge interface is not clear. In this study, first-principles calculations are employed to nail down the most stable dopant position and to obtain the physical Schottky barrier height (by HSE06 hybrid functional) of the NiGe/Ge contact. For the conventional n-type dopant such as phosphorous and arsenic, our calculations show that those two elements may be segregated at the interface, while the reduction of the Schottky barrier height is insignificant. This implies that the experimental improvement of the NiGe/n-type Ge junction by dopant are mainly attributed to the increased dopant concentration around the interface. The authors acknowledge financial support from the Taiwan Ministry of Science and Technology (under Grant No. MOST 103-2112-M-009-004-).

  14. Dopants adsorbed as single atoms prevent degradation of catalysts

    NASA Astrophysics Data System (ADS)

    Wang, Sanwu; Borisevich, Albina Y.; Rashkeev, Sergey N.; Glazoff, Michael V.; Sohlberg, Karl; Pennycook, Stephen J.; Pantelides, Sokrates T.

    2004-03-01

    The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement. Although doping has been found to impede degradation, the lack of atomistic understanding of the pertinent mechanism has hindered optimization. For example, porous γ-Al2O3, a widely used catalyst and catalytic support, transforms to non-porous α-Al2O3 at ~1,100 °C (refs 7-10). Doping with La raises the transformation temperature to ~1,250 °C, but it has not been possible to establish if La atoms enter the bulk, adsorb on surfaces as single atoms or clusters, or form surface compounds. Here, we use direct imaging by aberration-corrected Z-contrast scanning transmission electron microscopy coupled with extended X-ray absorption fine structure and first-principles calculations to demonstrate that, contrary to expectations, stabilization is achieved by isolated La atoms adsorbed on the surface. Strong binding and mutual repulsion of La atoms effectively pin the surface and inhibit both sintering and the transformation to α-Al2O3. The results provide the first guidelines for the choice of dopants to prevent thermal degradation of catalysts and other porous materials.

  15. Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions

    SciTech Connect

    Berrada, Salim Bescond, Marc Cavassilas, Nicolas; Raymond, Laurent; Lannoo, Michel

    2015-10-12

    This work theoretically studies the influence of both the geometry and the discrete nature of dopants of the access regions in ultra-scaled nanowire transistors. By means of self-consistent quantum transport simulations, we show that discrete dopants induce quasi-localized states which govern carrier injection into the channel. Carrier injection can be enhanced by taking advantage of the dielectric confinement occurring in these access regions. We demonstrate that the optimization of access resistance can be obtained by a careful control of shape and dopant position. These results pave the way for contact resistance engineering in forthcoming device generations.

  16. Photorefractive effect in ferroelectric liquid crystal blends containing terthiophene photoconductive chiral dopants

    NASA Astrophysics Data System (ADS)

    Sasaki, Takeo; Yoshino, Masanori

    2016-04-01

    Ferroelectric liquid crystalline mixtures composed of a smectic liquid crystal, a photoconductive chiral dopant, and an electron trap reagent exhibit a large photorefractivity with a rapid response. It is expected that the photorefractive FLC blends can be utilized in dynamic amplification of moving optical signals. In the present study, the photorefractive properties of the ferroelectric liquid crystal blends containing different photoconductive chiral dopants were examined. The durability of the photoconductive chiral dopants during laser irradiation was investigated. Tthe effect of the conduction of photogenerated ionic species on the photorefractivity decay was clarified.

  17. Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys

    NASA Astrophysics Data System (ADS)

    Field, R. L.; Occena, J.; Jen, T.; Del Gaudio, D.; Yarlagadda, B.; Kurdak, C.; Goldman, R. S.

    2016-12-01

    We report on the influence of surface reconstruction on silicon dopant incorporation and transport properties during molecular-beam epitaxy of GaAs(Bi) alloys. GaAs(Bi) growth with an (n × 3) reconstruction leads to n-type conductivity, while growth with a (2 × 1) reconstruction leads to p-type conductivity. We hypothesize that the presence or absence of surface arsenic dimers prevents or enables dopant incorporation into arsenic lattice sites. We consider the influence of bismuth anions on arsenic-dimer mediated dopant incorporation and the resulting electronic transport properties, demonstrating the applicability of this mechanism to mixed anion semiconductor alloys.

  18. Comparison of Cathodoluminescent and Photoluminescent Emission Spectra of LuPO4 with Different Dopants

    SciTech Connect

    Goedeke, Shawn; Hollerman, William Andrew; Allison, Stephen W; Gray, P A; Lewis, Linda A; Smithwick III, Robert W; Boatner, Lynn A; Glasgow, David C; Wise, H.

    2008-01-01

    The current interest in returning human exploration to the Moon and Mars makes cost-effective and low-mass health monitoring sensors essential for spacecraft development. In space, there are many surface measurements that are required to monitor the condition of the spacecraft including: surface temperature, radiation dose, and impact. Through the use of tailored phosphors, these conditions can be monitored. Practical space-based phosphor sensors will depend heavily upon research investigating the resistance of phosphors to ionizing radiation and their ability to anneal or 'self-heal' from damage caused by ionizing radiation. For the present research, a group of lutetium orthophosphate (LuPO{sub 4}) crystals with dopants including europium, erbium, and neodymium were characterized. Cathodoluminescence (CL) testing was performed using the low energy electron system located at the NASA Marshall Space Flight Center in Huntsville, Alabama. The data were collected using an Ocean Optics HR4000 spectrometer and a fiber optic feed-through. Previous research has shown that increases in both beam energy and current density improved the CL fluorescence yield. While the total electron dose was small, the intention was to maximize the number of irradiated materials. Additionally, these samples were evaluated using a PTI Quantum Master Spectrophotometer to determine the photoluminescence emission spectra.

  19. Dopant effects on the superconductivity of YBa2Cu3O7 ceramics

    NASA Astrophysics Data System (ADS)

    Yan, M. F.; Rhodes, W. W.; Gallagher, P. K.

    1988-02-01

    The effect of dopants on the superconductivity of YBa2Cu3O7 ceramics was investigated, comparing the effects of SrTiO3 and 17 different oxide dopants (namely, Ca, Sc, La, and Zr with possible substitution in the yttrium sites; K, Sr, and Pb in the barium sites; and Li, Mg, Fe, Co, Ni, Zn, Al, Ti, Nb, and Si in the copper sites). The results showed that these dopants can be classified into four categories, depending on their solubilities and substitution into different cation sites of the YBa2Cu3O7 perovskite. The effects of these dopants on the transition temperature of the superconductivity of YBa2Cu3O7 and on the integrity of the superconducting phase are discussed.

  20. Controlling the dopant dose in silicon by mixed-monolayer doping.

    PubMed

    Ye, Liang; Pujari, Sidharam P; Zuilhof, Han; Kudernac, Tibor; de Jong, Michel P; van der Wiel, Wilfred G; Huskens, Jurriaan

    2015-02-11

    Molecular monolayer doping (MLD) presents an alternative to achieve doping of silicon in a nondestructive way and holds potential for realizing ultrashallow junctions and doping of nonplanar surfaces. Here, we report the mixing of dopant-containing alkenes with alkenes that lack this functionality at various ratios to control the dopant concentration in the resulting monolayer and concomitantly the dopant dose in the silicon substrate. The mixed monolayers were grafted onto hydrogen-terminated silicon using well-established hydrosilylation chemistry. Contact angle measurements, X-ray photon spectroscopy (XPS) on the boron-containing monolayers, and Auger electron spectroscopy on the phosphorus-containing monolayers show clear trends as a function of the dopant-containing alkene concentration. Dynamic secondary-ion mass spectroscopy (D-SIMS) and Van der Pauw resistance measurements on the in-diffused samples show an effective tuning of the doping concentration in silicon.

  1. The dopant dependent photocatalytic activity of polyaniline towards the degradation of Rose Bengal dye

    NASA Astrophysics Data System (ADS)

    Chatterjee, Mukulika Jana; Banerjee, Dipali; Ghosh, Amrita; Mondal, Anup

    2016-05-01

    Polyaniline (PANI) with two different dopants, hydrochloric acid (HCl) and bismuth nitrate (Bi (NO3)3), were synthesized to investigate the effect of dopant on photocatalytic degradation of Rose Bengal, an organic dye, in presence of sunlight. PANI, synthesized by in situ polymerization was characterized by FESEM images, FTIR and UV-Vis spectra. FESEM images show rod like structures obtained for both the dopants. FTIR spectra confirms the formation of conducting PANI with the presence of C=N, C=C stretching modes in quinoid and benzenoid units. Band gap of PANI has been obtained from UV-Vis spectrum. Doped polyaniline exhibited a fast degradation of dye by 98.62 % & 98.12 % within 5 min & 8 min under visible light illumination for the dopant HCl & Bi (NO3)3 respectively.

  2. Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

    SciTech Connect

    Witczak, Steven C.; Winokur, Peter S.; Lacoe, Ronald C.; Mayer, Donald C.

    2000-06-01

    An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps, and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with {sup 60}Co {gamma} rays at 100 degree sign C and zero bias, where the dopant deactivation is significant.(c) 2000 American Institute of Physics.

  3. Theory of defects and dopants in amorphous and crystalline semiconductors

    NASA Astrophysics Data System (ADS)

    Stumm, Petra

    In this dissertation the structural and electronic consequences of defects and dopants in amorphous and crystalline semiconductors are investigated. The research that I have done explores these possibilities on a theoretical level. This work is aimed towards comprising a detailed study of the atomic scale structure and electrical properties of elemental and nitrogen doped ta-C. Further, results on a investigation of native defects in crystalline and amorphous GaN are reported. First principles methods are used for these calculations. Two structural tetrahedral amorphous carbon models were introduced, whose properties were in agreement with the available experimental data. The topological and electronic properties for different N doping concentrations were investigated. Substitutional N occurred in tetrahedral and pi bonded sites, which resulted in an increase of the Fermi energy, while N incorporation in strained network sites induced structural changes that lead to an increase in the spsp2 fraction of the material. Molecular dynamics simulations were employed to study defects in GaN, where charge transfer between the ions is included in an approximate fashion. We find good agreement for the band structure of wurtzite and zincblende GaN compared to other recent calculations, suggesting the suitability of our method to describe GaN. A 96 atom GaN supercell is used to study the relaxations and electronic properties of common defects in the crystal structure, including Ga and N vacancies and antisites. The prevalent conduction mechanisms in nitrogen doped tetrahedral amorphous carbon are identified and discussed. These results are compared to the recent experimental reports on N doping of ta-C and we find that the non-doping 3-fold N incorporation (Nsbsp{3}{0}) is energetically most likely, which explains the low doping efficiency seen in experiments. The electronic signatures of intrinsic defects in GaN are analyzed. Also, two 64 atom models of amorphous GaN at

  4. Dopant-controlled single-electron pumping through a metallic island

    NASA Astrophysics Data System (ADS)

    Wenz, Tobias; Hohls, Frank; Jehl, Xavier; Sanquer, Marc; Barraud, Sylvain; Klochan, Jevgeny; Barinovs, Girts; Kashcheyevs, Vyacheslavs

    2016-05-01

    We investigate a hybrid metallic island/single dopant electron pump based on fully depleted silicon-on-insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used to control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.

  5. Numerical study on the radial dopant distribution in micro-pulling-down crystal growth

    NASA Astrophysics Data System (ADS)

    Zeng, Zhong; Qiao, Long; Liu, Yaping; Yokota, Yuui; Kawazoe, Yoshiyuki; Yoshikawa, Akira

    2016-01-01

    To improve the dopant homogeneity in the radial direction, the micro-pulling-down apparatus was modified for Ce-doped Y3Al5O12 (Ce3+:YAG) crystal growth. Two effective crucible variants, diffusion-channel and multi-channel crucibles, were adopted to alleviate the inhomogeneity of dopant concentration in the radial direction. In the diffusion-channel model, two different inclination angles were investigated. The results demonstrate that the radial dopant distribution at the melt-crystal interface (i.e., the growth front) is improved notably by using the diffusion-channel crucible. Furthermore, the better radial distribution is achieved with the larger inclination angle. In the multi-channel model, more capillary-channels result in a smaller inflow velocity from every single capillary-channel with the same growth rate. Therefore, the effect of inflow on the dopant distribution is reduced, and thus the radial dopant homogeneity is improved apparently. Besides, although the symmetry of concentration distribution along the azimuthal direction is broken in the multi-channel model, the whole homogeneity of dopant at the melt-crystal interface is ameliorated.

  6. Properties of Dopants in HfOx for Improving the Performance of Nonvolatile Memory

    NASA Astrophysics Data System (ADS)

    Duncan, Dan; Magyari-Köpe, Blanka; Nishi, Yoshio

    2017-03-01

    Doping is an increasingly popular technique for improving the characteristics of cutting-edge HfOx nonvolatile memory devices, but relatively few dopant species have been investigated. In this work, the properties of 50 different cation and anion dopants in HfOx are explored using density-functional theory and are corroborated with experimental data. Depending on the atomic species, dopants are found to preferentially form on either substitutional or interstitial lattice sites and to reduce the formation energy of oxygen vacancies in the surrounding oxide. The behavior of cation dopants in HfOx is also found to be well predicted by six properties: dopant valence, atomic radius, native-oxide enthalpy of formation, coordination number, magnetization, and charge transfer with the HfOx lattice. These results can be used to optimize dopant selection for tuning of the switching characteristics of HfOx -based resistance-change random-access-memory and conductive-bridge random-access-memory devices.

  7. Measurement of lateral dopant diffusion in rapid thermal annealed W-polycide gate structures

    SciTech Connect

    Schiml, T.; Bevk, J.; Furtsch, M.; Georgiou, G.E.; Cirelli, R.; Mansfield, W.M.; Silverman, P.J.; Luftman, H.S.

    1996-12-01

    Lateral dopant diffusion is a well known problem in dual-gate W-polycide CMOS devices. The authors have recently demonstrated that RTA processing helps to alleviate this problem and at the same time ensures sufficient dopant activation. However, due to the complex micro-structural changes in both poly-Si and WSi{sub x} (x {approximately} 2.5) layers during the RTA process, the time dependence of the diffusion processes and dopant distribution are difficult to predict. Consequently, the process optimization and device simulations are rather unreliable. They describe a new experimental technique to measure lateral dopant diffusion and 2-dimensional dopant distribution in RTA processed W-polycide structures using conventional SIMS analysis of lithographically defined test structures. The experiments show that the technique is capable of measuring lateral dopant diffusion over distances between one and tens of microns without losing the vertical resolution of conventional SIMS profiling. The technique can be used to study diffusion processes in a variety of materials and multi-layer structures.

  8. Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1Sb0.9)2-xTe3.

    PubMed

    Lee, Inhee; Kim, Chung Koo; Lee, Jinho; Billinge, Simon J L; Zhong, Ruidan; Schneeloch, John A; Liu, Tiansheng; Valla, Tonica; Tranquada, John M; Gu, Genda; Davis, J C Séamus

    2015-02-03

    To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a "Dirac-mass gap" in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr0.08(Bi0.1Sb0.9)1.92Te3. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of Δ(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship [Formula: see text] is confirmed throughout and exhibits an electron-dopant interaction energy J* = 145 meV·nm(2). These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.

  9. Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1Sb0.9)2-xTe3

    DOE PAGES

    Lee, Inhee; Kim, Chung Koo; Lee, Jinho; ...

    2015-01-20

    To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a “Dirac-mass gap” in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in themore » ferromagnetic TI Cr₀.₀₈(Bi₀.₁Sb₀.₉)₁.₉₂Te₃. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of Δ(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship Δ(r)∝n(r) is confirmed throughout and exhibits an electron–dopant interaction energy J* = 145 meV·nm². In addition, these observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.« less

  10. Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1Sb0.9)2-xTe3

    PubMed Central

    Lee, Inhee; Kim, Chung Koo; Lee, Jinho; Billinge, Simon J. L.; Zhong, Ruidan; Schneeloch, John A.; Liu, Tiansheng; Valla, Tonica; Tranquada, John M.; Gu, Genda; Davis, J. C. Séamus

    2015-01-01

    To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a “Dirac-mass gap” in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr0.08(Bi0.1Sb0.9)1.92Te3. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of Δ(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship Δ(r)∝n(r) is confirmed throughout and exhibits an electron–dopant interaction energy J* = 145 meV·nm2. These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential. PMID:25605947

  11. Diameter Dependence of Planar Defects in InP Nanowires

    PubMed Central

    Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y. B.; Ho, Johnny C.

    2016-01-01

    In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of “bottom-up” InP NWs with minimized defect concentration which are suitable for various device applications. PMID:27616584

  12. Diameter Dependence of Planar Defects in InP Nanowires

    NASA Astrophysics Data System (ADS)

    Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, Senpo; Shen, Lifan; Han, Ning; Pun, Edwin Y. B.; Ho, Johnny C.

    2016-09-01

    In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of “bottom-up” InP NWs with minimized defect concentration which are suitable for various device applications.

  13. Diameter-dependent wetting of tungsten disulfide nanotubes.

    PubMed

    Goldbart, Ohad; Cohen, Sidney R; Kaplan-Ashiri, Ifat; Glazyrina, Polina; Wagner, H Daniel; Enyashin, Andrey; Tenne, Reshef

    2016-11-29

    The simple process of a liquid wetting a solid surface is controlled by a plethora of factors-surface texture, liquid droplet size and shape, energetics of both liquid and solid surfaces, as well as their interface. Studying these events at the nanoscale provides insights into the molecular basis of wetting. Nanotube wetting studies are particularly challenging due to their unique shape and small size. Nonetheless, the success of nanotubes, particularly inorganic ones, as fillers in composite materials makes it essential to understand how common liquids wet them. Here, we present a comprehensive wetting study of individual tungsten disulfide nanotubes by water. We reveal the nature of interaction at the inert outer wall and show that remarkably high wetting forces are attained on small, open-ended nanotubes due to capillary aspiration into the hollow core. This study provides a theoretical and experimental paradigm for this intricate problem.

  14. Titanium dioxide nanotube membranes for solar energy conversion: effect of deep and shallow dopants.

    PubMed

    Ding, Yuchen; Nagpal, Prashant

    2017-04-12

    Nanostructured titanium dioxide (TiO2) has been intensively investigated as a material of choice for solar energy conversion in photocatalytic, photoelectrochemical, photovoltaic, and other photosensitized devices for converting light into chemical feedstocks or electricity. Towards management of light absorption in TiO2, while the nanotubular structure improves light absorption and simultaneous charge transfer to mitigate problems due to the indirect bandgap of the semiconductor, typically dopants are used to improve light absorption of incident solar irradiation in the wide bandgap of TiO2. While these dopants can be critical to the success of these solar energy conversion devices, their effect on photophysical and photoelectrochemical properties and detailed photokinetics are relatively under-studied. Here, we show the effect of deep and shallow metal dopants on the kinetics of photogenerated charged carriers in TiO2 and the resulting effect on photocatalytic and photoelectrochemical processes using these nanotube membranes. We performed a detailed optical, electronic, voltammetry and electrochemical impedance study to understand the effect of shallow and deep metal dopants (using undoped and niobium- and copper-doped TiO2 nanotubes) on light absorption, charge transport and charge transfer processes. Using wireless photocatalytic methylene blue degradation and carbon dioxide reduction, and wired photoelectrochemical device measurements, we elucidate the effect of different dopants on solar-to-fuel conversion efficiency and simultaneously describe the photokinetics using a model, to help design better energy conversion devices.

  15. A dopant for improved sensitivity in easy ambient sonic-spray ionization mass spectrometry.

    PubMed

    Santos, Jandyson M; Vendramini, Pedro H; Schwab, Nicolas V; Eberlin, Marcos N; de Morais, Damila R

    2016-01-01

    Recently, 3-nitrobenzonitrile (3-NBN) has been used to improve sensitivity of sonic-spray ionization mass spectrometry. Easy ambient sonic-spray ionization (EASI) is one of the simplest, gentlest and most used spray-based desorption/ionization ambient techniques, but limited sensitivity has been commonly taken as its major drawback. Herein we investigate the use of 3-NBN as a dopant in EASI-MS for improved sensitivity. Using a few typical EASI samples as test cases, the presence of 10 ppm (µg ml(-1) ) of 3-NBN in the spray solvent showed two to fourfold gains in EASI-MS sensitivity as measured both by total ion current and S/N ratios, accompanied with significant reductions in chemical noise. Sensitivity for DESI using 3-NBN as a dopant also improved and dopant DESI versus dopant EASI sensitivities were compared. The use of solvent dopants seems therefore to be a promising strategy to improve sensitivity for spray-based ambient MS techniques. Copyright © 2015 John Wiley & Sons, Ltd.

  16. Electron-donor dopant, method of improving conductivity of polymers by doping therewith, and a polymer so treated

    DOEpatents

    Liepins, Raimond; Aldissi, Mahmoud

    1988-01-01

    Polymers with conjugated backbones, both polyacetylene and polyaromatic heterocyclic types, are doped with electron-donor agents to increase their electrical conductivity. The electron-donor agents are either electride dopants made in the presence of lithium or dopants derived from alkalides made in the presence of lithium. The dopants also contain a metal such as cesium and a trapping agent such as a crown ether.

  17. Electron-donor dopant, method of improving conductivity of polymers by doping therewith, and a polymer so treated

    DOEpatents

    Liepins, R.; Aldissi, M.

    1984-07-27

    Polymers with conjugated backbones, both polyacetylene and polyaromatic heterocyclic types, are doped with electron-donor agents to increase their electrical conductivity. The electron-donor agents are either electride dopants made in the presence of lithium or dopants derived from alkalides made in the presence of lithium. The dopants also contain a metal such as cesium and a trapping agent such as a crown ether.

  18. Interdiffusion in the MgO-Al2O3 spinel with or without some dopants

    NASA Astrophysics Data System (ADS)

    Zhang, P.; Debroy, T.; Seetharaman, S.

    1996-08-01

    With a view to seek an improved understanding of the DIMOX process, interdiffusion of polycrystalline MgO and Al2O3 in the temperature range 1473 to 1873 K was studied by diffusion couple experiments. The interdiffusivities in the spinel layer were calculated as functions of composition and temperature. The spinel portion of the phase diagram in the system MgO-Al2O3 was determined from carefully measured compositions at the phase boundaries, and the low temperature spinel region of the phase diagram was confirmed from the present results. For Zn2+ as dopant in alumina, the growth rate of spinel thickness seems to increase when compared with that of the diffusion couples without dopant. The samples containing Si4+ as dopant reveal the formation of a glass phase, and the effect of Si4+ on the diffusion process appears to be negligible.

  19. Influence of Pentavalent Dopant Addition to Polarization and Bioactivity of Hydroxyapatite

    PubMed Central

    Dhal, Jharana; Bose, Susmita; Bandyopadhyay, Amit

    2013-01-01

    Influence of pentavalent tantalum doping in bulk hydroxyapatite (HAp) ceramics has been investigated for polarizability and bioactivity. Phase analysis from X-ray diffraction measurement indicates that increasing dopant concentration decreased the amount of HAp phase and increased β-TCP and/or α-TCP phases during sintering at 1250 °C in a muffle furnace. Results from thermally stimulated depolarization current (TSDC) measurements showed that doping hindered charge storage ability in HAp ceramics, and doped samples stored fewer charge compared to pure HAp. However, doping enhanced wettability of HAp samples, which was improved further due to polarization. In vitro human osteoblast cell-materials interactions study revealed an increase in bioactivity due to dopant addition and polarization compared to pure HAp. This increase in bioactivity was attributed to the increase in wettability due to surface charge and dopant addition. PMID:23623133

  20. Impact of different dopants on the switching properties of ferroelectric hafniumoxide

    NASA Astrophysics Data System (ADS)

    Schroeder, Uwe; Yurchuk, Ekaterina; Müller, Johannes; Martin, Dominik; Schenk, Tony; Polakowski, Patrick; Adelmann, Christoph; Popovici, Mihaela I.; Kalinin, Sergei V.; Mikolajick, Thomas

    2014-08-01

    The wake-up behavior of ferroelectric thin film capacitors based on doped hafnium oxide dielectrics in TiN-based metal-insulator-metal structures is reported. After field cycling a remanent polarization up to 40 µC/cm2 and a high coercive field of about 1 MV/cm was observed. Doping of HfO2 by different dopants with a crystal radius ranging from 54 pm (Si) to 132 pm (Sr) was evaluated. In all cases, an improved polarization-voltage hysteresis after wake-up cycling is visible. For smaller dopant atoms like Si and Al stronger pinching of the polarization hysteresis appeared with increasing dopant concentration and proved to be stable during cycling.

  1. Influence of pentavalent dopant addition to polarization and bioactivity of hydroxyapatite.

    PubMed

    Dhal, Jharana; Bose, Susmita; Bandyopadhyay, Amit

    2013-07-01

    Influence of pentavalent tantalum doping in bulk hydroxyapatite (HAp) ceramics has been investigated for polarizability and bioactivity. Phase analysis from X-ray diffraction measurement indicates that increasing dopant concentration decreased the amount of HAp phase and increased β-TCP and/or α-TCP phases during sintering at 1250 °C in a muffle furnace. Results from thermally stimulated depolarization current (TSDC) measurements showed that doping hindered charge storage ability in HAp ceramics, and doped samples stored fewer charge compared to pure HAp. However, doping enhanced wettability of HAp samples, which was improved further due to polarization. In vitro human osteoblast cell-material interaction study revealed an increase in bioactivity due to dopant addition and polarization compared to pure HAp. This increase in bioactivity was attributed to the increase in wettability due to surface charge and dopant addition.

  2. Fine-Tuning the Properties of Doped Multifunctional Materials by Controlled Reduction of Dopants.

    PubMed

    Barroux, Hugo; Jiang, Tengfei; Paul, Camille; Massuyeau, Florian; Génois, Romain; Gordon, Elijah E; Whangbo, Myung-Hwan; Jobic, Stéphane; Gautier, Romain

    2017-03-02

    The physical properties of doped multifunctional compounds are commonly tuned by controlling the amount of dopants, but this control is limited because all the properties are influenced simultaneously by this single parameter. Here, we present a strategy that enables the fine-tuning of a specific combination of properties by controlling the reduction of dopants. The feasibility of this approach was demonstrated by optimizing the near-IR photoluminescence of strontium titanate SrTiO3 :Ni for potential applications in biomedicine for a range of absorbance in the visible/near-IR region. We discussed how material properties, such as luminescence, conductivity, or photocatalytic properties can be designed by carefully controlling the ratio of dopants in different oxidation states.

  3. Nanoporous Ge thin film production combining Ge sputtering and dopant implantation.

    PubMed

    Toinin, Jacques Perrin; Portavoce, Alain; Hoummada, Khalid; Texier, Michaël; Bertoglio, Maxime; Bernardini, Sandrine; Abbarchi, Marco; Chow, Lee

    2015-01-01

    In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO2 and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO2, (ii) implantation preannealing, (iii) high-dose dopant implantation, and (iv) implantation postannealing. Scanning electron microscopy and transmission electron microscopy were used to characterize the morphology of the Ge film at different process steps under different postannealing conditions. For the same postannealing conditions, the Ge film topology was shown to be similar for different implantation doses and different dopants. However, the film topology can be controlled by adjusting the postannealing conditions.

  4. N-type doping of poly(p-phenylene vinylene) with air-stable dopants

    NASA Astrophysics Data System (ADS)

    Lu, Mingtao; Nicolai, Herman T.; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.

    2011-10-01

    The electron transport in poly(p-phenylene vinylene) (PPV) derivatives blended with the air-stable n-type dopant (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI) is investigated. This dopant is activated after thin film deposition by annealing and strongly enhances the electron transport due to filling of electron traps as well as donation of free electrons to the lowest unoccupied molecular orbital (LUMO) of PPV. As a result, the electron current in a doped device exceeds the trap-free hole current. The total generated free electron density in the LUMO by the dopant typically amounts to 1023 m-3.

  5. Study of dopant concentrations on thermally induced mode instability in high-power fiber amplifiers

    NASA Astrophysics Data System (ADS)

    Tao, Rumao; Ma, Pengfei; Wang, Xiaolin; Zhou, Pu; Liu, Zejin

    2016-06-01

    The dependence of mode instabilities (MIs) on ytterbium dopant concentrations in high-power fiber amplifiers has been investigated. It is theoretically shown that, by only varying the fiber length to maintain the same total small-signal pump absorption, the MI threshold is independent of dopant concentration. MI thresholds of gain fibers with ytterbium dopant concentrations of 5.93  ×  1025 m-3 and 1.02  ×  1026 m-3 have been measured which exhibit similar MI thresholds and agree with the theoretical results. The result indicates that heavy doping of active fiber can be adopted to suppress nonlinear effects without decreasing the MI threshold. This provides a method of maximizing the power output of fiber laser, taking into account the stimulated Brillouin scattering, stimulated Raman Scattering, and MI thresholds simultaneously.

  6. Ion Profiling of Implanted Dopants in Si (001) with Excess Vacancy Concentration

    SciTech Connect

    Dalponte, M.; Boudinov, H.; Goncharova, L. V.; Feng, T.; Garfunkel, E.; Gustafsson, T.

    2007-09-26

    Medium energy ion scattering (MEIS) was used to study the distribution of ion-implanted As and Sb dopants in Si with excess vacancies and SIMOX substrates as well as the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantation at high temperatures. Under these conditions, effects related to the different chemical nature of the pre-implanted species are expected. The annealing behavior and depth distribution of the Sb atoms differed for O compared to N pre-implanted Si. After long annealing times, the oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and a more uniform dopant distribution. For both N and O pre-implanted samples a large dopant loss to the atmosphere during annealing was observed.

  7. Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

    PubMed Central

    Portavoce, Alain; Hoummada, Khalid; Texier, Michaël; Bertoglio, Maxime; Bernardini, Sandrine; Abbarchi, Marco; Chow, Lee

    2015-01-01

    Summary In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO2 and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO2, (ii) implantation preannealing, (iii) high-dose dopant implantation, and (iv) implantation postannealing. Scanning electron microscopy and transmission electron microscopy were used to characterize the morphology of the Ge film at different process steps under different postannealing conditions. For the same postannealing conditions, the Ge film topology was shown to be similar for different implantation doses and different dopants. However, the film topology can be controlled by adjusting the postannealing conditions. PMID:25821672

  8. Role of Entropy in the Expulsion of Dopants from Optically Trapped Colloidal Assemblies

    NASA Astrophysics Data System (ADS)

    Kakoty, Hreedish; Banerjee, Rajarshi; Dasgupta, Chandan; Ghosh, Ambarish

    2016-12-01

    Controlling an assembly of colloidal particles under external forces can be helpful in developing soft nanomaterials with novel functionalities. How external impurities organize within such confined systems is of fundamental and technological interest, especially when the system sizes are so small that even a single dopant can interact with an appreciable fraction of the system. To address this question, we use a defocused laser beam to form two-dimensional colloidal crystallites containing foreign dopants. Our studies reveal a surprising position dependence in the fate of dopants getting either spontaneously expelled or permanently internalized within the crystallite. This phenomenon arises due to the subtle interplay between the effects of external confinement and the role of entropy in the thermodynamics of small assemblies of interacting particles.

  9. Recent progress of dopant-free organic hole-transporting materials in perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Dongxue, Liu; Liu, Yongsheng

    2017-01-01

    Organic–inorganic hybrid perovskite solar cells have undergone especially intense research and transformation over the past seven years due to their enormous progress in conversion efficiencies. In this perspective, we review the latest developments of conventional perovskite solar cells with a main focus on dopant-free organic hole transporting materials (HTMs). Regarding the rapid progress of perovskite solar cells, stability of devices using dopant-free HTMs are also discussed to help readers understand the challenges and opportunities in high performance and stable perovskite solar cells. Project supported by the Scientific Research Starting Foundation for Overseas Introduced Talents of College of Chemistry, Nankai University.

  10. Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography

    NASA Astrophysics Data System (ADS)

    Blavette, D.; Duguay, S.

    2016-05-01

    The role of atom probe tomography in the investigation of clustering and segregation of dopants to lattice defects in semiconductors is highlighted on the basis of some selected salient illustrations obtained at the Groupe de Physique des Matériaux of Rouen (France). The instrument is shown to be able to map out the 3D distribution of chemical species in the three dimensions of space at the ultimate scale. Results related to clustering, segregation of dopants (As, B, and P) to grain boundaries, dislocation loops, and extended defects in silicon are discussed.

  11. Addition of photosensitive dopants to the D0 liquid argon calorimeter

    SciTech Connect

    Amos, N.A.; Anderson, D.F.

    1992-10-01

    The addition of photosensitive dopants to liquid argon greatly enhances the signal from heavily ionizing particles. Since binding energy losses we correlated with the heavily ionizing component in hadronic showers, the addition of photosensitive dopants has been suggested as a mechanism to tune the e/[pi] ratio in liquid argon calorimeters. A measurement was performed at the FNAL test beam, adding 4 ppM tetramethylgermanium to the D[phi] uranium-liquid argon calorimeter. An increase in response for electromagnetic and hadronic showers was observed, with no net change in the e/[pi] ratio.

  12. Addition of photosensitive dopants to the D0 liquid argon calorimeter

    SciTech Connect

    Amos, N.A.; Anderson, D.F.; The D0 Collaboration

    1992-10-01

    The addition of photosensitive dopants to liquid argon greatly enhances the signal from heavily ionizing particles. Since binding energy losses we correlated with the heavily ionizing component in hadronic showers, the addition of photosensitive dopants has been suggested as a mechanism to tune the e/{pi} ratio in liquid argon calorimeters. A measurement was performed at the FNAL test beam, adding 4 ppM tetramethylgermanium to the D{phi} uranium-liquid argon calorimeter. An increase in response for electromagnetic and hadronic showers was observed, with no net change in the e/{pi} ratio.

  13. The ionization mechanisms in direct and dopant-assisted atmospheric pressure photoionization and atmospheric pressure laser ionization.

    PubMed

    Kauppila, Tiina J; Kersten, Hendrik; Benter, Thorsten

    2014-11-01

    A novel, gas-tight API interface for gas chromatography-mass spectrometry was used to study the ionization mechanism in direct and dopant-assisted atmospheric pressure photoionization (APPI) and atmospheric pressure laser ionization (APLI). Eight analytes (ethylbenzene, bromobenzene, naphthalene, anthracene, benzaldehyde, pyridine, quinolone, and acridine) with varying ionization energies (IEs) and proton affinities (PAs), and four common APPI dopants (toluene, acetone, anisole, and chlorobenzene) were chosen. All the studied compounds were ionized by direct APPI, forming mainly molecular ions. Addition of dopants suppressed the signal of the analytes with IEs above the IE of the dopant. For compounds with suitable IEs or Pas, the dopants increased the ionization efficiency as the analytes could be ionized through dopant-mediated gas-phase reactions, such as charge exchange, proton transfer, and other rather unexpected reactions, such as formation of [M + 77](+) in the presence of chlorobenzene. Experiments with deuterated toluene as the dopant verified that in case of proton transfer, the proton originated from the dopant instead of proton-bound solvent clusters, as in conventional open or non-tight APPI sources. In direct APLI using a 266 nm laser, a narrower range of compounds was ionized than in direct APPI, because of exceedingly high IEs or unfavorable two-photon absorption cross-sections. Introduction of dopants in the APLI system changed the ionization mechanism to similar dopant-mediated gas-phase reactions with the dopant as in APPI, which produced mainly ions of the same form as in APPI, and ionized a wider range of analytes than direct APLI.

  14. Detecting excitation and magnetization of individual dopants in a semiconductor two-dimensional electron gas

    NASA Astrophysics Data System (ADS)

    Wiebe, Jens

    2011-03-01

    Magnetic atoms doped into a semiconductor are the building blocks for bottom up spintronic and quantum logic devices. They also provide model systems for the investigation of fundamental effects. In order to correlate the dopant's atomic structure with its magnetism magnetically sensitive techniques with atomic resolution are a prerequisite. Here, I show electrical excitation and read-out [ 1 ] of single magnetic dopant associated spins in a two-dimensional electron gas (2DEG) confined to a semiconductor surface [ 2 ] using spin-resolved scanning tunneling spectroscopy [ 3 ] . I will review our real-space study of the quantum Hall transition in the 2DEG [ 2 ] and of the magnetic properties of the dopants [ 1 ] . Finally, I will demonstrate that the dopant serves as an atomic scale probe for local magnetometry of the 2DEG. This work was done in collaboration with A. A. Khajetoorians, B. Chillian, S. Schuwalow, F. Lechermann, K. Hashimoto, C. Sohrmann, T. Inaoka, F. Meier, Y. Hirayama, R. A. Römer, M. Morgenstern, and R. Wiesendanger. [ 1 ] A. A. Khajetoorians et al., Nature 467, 1084 (2010). [ 2 ] K. Hashimoto et al., Phys. Rev. Lett. 101, 256802 (2008). [ 3 ] J. Wiebe et al., Rev. Sci. Instrum. 75, 4871 (2004). We acknowledge financial support from ERC Advanced Grant ``FURORE'', by the DFG via SFB668 and GrK1286, and by the city of Hamburg via the cluster of excellence ``Nanospintronics''.

  15. Self- and dopant diffusion in extrinsic boron doped isotopically controlled silicon multilayer structures

    SciTech Connect

    Sharp, Ian D.; Bracht, Hartmut A.; Silvestri, Hughes H.; Nicols, Samuel P.; Beeman, Jeffrey W.; Hansen, John L.; Nylandsted Larsen, Arne; Haller, Eugene E.

    2002-04-01

    Isotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. {sup 30}Si was used as a tracer through a multilayer structure of alternating natural Si and enriched {sup 28}Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850 C and 1100 C. A specially designed ion- implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

  16. Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices

    NASA Astrophysics Data System (ADS)

    Moraru, Daniel; Samanta, Arup; Tyszka, Krzysztof; Anh, Le The; Muruganathan, Manoharan; Mizuno, Takeshi; Jablonski, Ryszard; Mizuta, Hiroshi; Tabe, Michiharu

    2015-09-01

    Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics. Here, we review some of the recent progress in the research along this direction, with a focus on devices fabricated with simple and CMOS-compatible-processing technology. We present results from a scanning probe method (Kelvin probe force microscopy) which show direct observation of dopant-induced potential modulations. We also discuss tunneling transport behavior based on the analysis of low-temperature I- V characteristics for devices representative for different regimes of doping concentration, i.e., different inter-dopant coupling strengths. This overview outlines the present status of the field, opening also directions toward practical implementation of dopant-atom devices.

  17. A fixed-grid method for transient simulations of dopant segregation in VGF-RMF growth

    NASA Astrophysics Data System (ADS)

    Nikrityuk, Petr A.; Pätzold, Olf; Stelter, Michael

    2012-01-01

    In this work a fixed-grid, virtual-front tracking model originally developed for modeling dendritic growth has been adopted for transient simulations of dopant segregation in vertical gradient freeze (VGF) melt growth of Ga-doped germanium under the influence of a rotating magnetic field (RMF). The interfacial Stefan conditions for temperature and solute are formulated in volumetric terms in energy and solute conservation equations, which allow the interface to be tracked implicitly with no need to calculate the growth velocity. The model and the code are validated against an analytical solution for the transient solidification of a binary alloy at constant velocity. The numerical results show the strong relationship between the melt flow pattern and the dopant concentration in the crystal grown. The better melt mixing during growth under the influence of RMF is found to have a significant impact on the axial and radial macrosegregation of dopants. Simulation results are in good qualitative agreement with previous experimental observations of the dopant segregation in VGF-RMF growth, which now are seen ass a direct consequence of the mixing state of the melt.

  18. The Influence of Dopants on the Effectiveness of Alginate Beads in Immobilized Cell Reactors.

    PubMed

    Nordmeier, Akira; Chidambaram, Dev

    2016-04-01

    Zymomonas mobilis immobilized in doped calcium alginate (Ca-alginate) was successfully employed for the production of ethanol in an immobilized cell reactor. Polyethylene oxide and F127 dimethacrylate were evaluated as potential dopants for Ca-alginate beads to decrease lag time and increase initial ethanol yield. The influence of the type and concentration of the dopant on the effectiveness of the microbe immobilized in Ca-alginate beads to produce ethanol was studied, and results were compared to the widely used 2 % Ca-alginate with no dopants, which acted as control. Immobilized cell reactors that were operated using beads doped with 0.25 % polyethylene oxide (PEO) reached an ethanol yield of ∼70 % in 24 h, which was significantly higher than an ethanol yield of 25 % obtained for the control reactor operated using undoped Ca-alginate beads. This study shows that the use of water-soluble dopants can potentially reduce the lag phase and thus improve the initial production yield of immobilized cell reactors, likely due to an increase in porosity and diffusion rate of the doped beads.

  19. Influence of Dopant Distribution on the Plasmonic Properties of Indium Tin Oxide Nanocrystals

    SciTech Connect

    Lounis, SD; Runnerstrom, EL; Bergerud, A; Nordlund, D; Milliron, DJ

    2014-05-14

    Doped metal oxide nanocrystals represent an exciting frontier for colloidal synthesis of plasmonic materials, displaying unique optoelectronic properties and showing promise for a variety of applications. However, fundamental questions about the nature of doping in these materials remain. In this article, the strong influence of radial dopant distribution on the optoelectronic properties of colloidal indium tin oxide nanocrystals is reported. Comparing elemental depth-profiling by X-ray photoelectron spectroscopy (XPS) with detailed modeling and simulation of the optical extinction of these nanocrystals using the Drude model for free electrons, a correlation between surface segregation of tin ions and the average activation of dopants is observed. A strong influence of surface segregation of tin on the line shape of the localized surface plasmon resonance (LSPR) is also reported. Samples with tin segregated near the surface show a symmetric line shape that suggests weak or no damping of the plasmon by ionized impurities. It is suggested that segregation of tin near the surface facilitates compensation of the dopant ions by electronic defects and oxygen interstitials, thus reducing activation. A core shell model is proposed to explain the observed differences in line shape. These results demonstrate the nuanced role of dopant distribution in determining the optoelectronic properties of semiconductor nanocrystals and suggest that more detailed study of the distribution and structure of defects in plasmonic colloidal nanocrystals is warranted.

  20. Two-dimensional dopant analysis in silicon using chemical etching and transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Neogi, Suneeta Shamanna

    The purpose of this research has been to develop a methodologoy to map two-dimensional dopant distributions in silicon and investigate the factors that influence the interpretation of the results. The analysis exploits the image contrast obtained by transmission electron microscopy (TEM) using cross-section specimens which have undergone selective chemical etching. The appearance of iso-thickness contours in a selectively etched TEM sample must represent iso-concentration contours when imaged under constant diffraction conditions. The application of this technique is two-fold: (1) to establish a physical metrology of semiconductor devices for the purpose of research and development efforts that impact on future nodes outlined in the semiconductor roadmap and (2) to provide physical data for validation of simulation tools in technology computer aided design (TCAD). The research involves an investigation into the selective removal of doped regions for both test and device structures, followed by an analysis to obtain two-dimensional (2-D) dopant profiles. The critical issues which arise in the development of a methodology to profile dopant distributions and which are addressed in this investigation are, wedge technique versus conventional dimple and ion-mill procedures for thin-film preparation, thin-film versus bulk chemical etching, data acquisition using TEM and choice of diffraction conditions, sensitivity in terms of the etch detection limit, resolution influenced by the effective extinction length of the operating reflection, digital image processing to extract profiles from thickness contours, calibration of the 2-D profiles using a one-dimensional (1-D) calibrator and role of structure/dopant interactions such as stress, interfaces and point defects in test structures and real device structures containing additional processing sequences. Selective chemical etching in combination with TEM has the sensitivity, resolution and reproducibility required to be used

  1. Photoswitching of ferroelectric liquid crystals using chiral thioindigo dopants: The development of a photochemical switch hitter.

    PubMed

    Lemieux, Robert P

    2004-01-01

    By virtue of its spontaneous polarization (PS), a ferroelectric SmC* liquid crystal can be switched between two states corresponding to opposite molecular tilt orientations using an electric field, thus producing an ON-OFF light shutter between crossed polarizers. Considerable efforts have been made over the past decade to develop photonic FLC light shutters because of their potential uses in dynamic holography and optical data storage. The ON-OFF switching of a FLC light shutter can be triggered by light via a photoinversion of PS using a photochromic dopant. The spontaneous polarization is a chiral bulk property that can be left-handed (negative) or right-handed (positive), depending on the absolute configuration of the chiral component of the SmC* phase. In the approach described herein, the magnitude of PS is modulated via the photoisomerization of a chiral thioindigo dopant that undergoes a large increase in transverse dipole moment upon trans-cis photoisomerization. The sign of PS is photoinverted using an "ambidextrous" thioindigo dopant containing a chiral 2-octyloxy side chain that is coupled to the thioindigo core and induces a positive PS, and a chiral 2,3-difluorooctyloxy side chain that is decoupled from the core and induces a negative PS. In the trans form, the 2,3-difluorooctyloxy side chain predominates and the net PS induced by the dopant is negative. However, upon trans-cis-photoisomerization, the increase in transverse dipole moment of the 2-octyloxy/thioindigo unit raises its induced PS over that of the decoupled 2,3-difluorooctyloxy side chain, and thus inverts the net sign of PS induced by the dopant from negative to positive.

  2. Charge Exchange Reaction in Dopant-Assisted Atmospheric Pressure Chemical Ionization and Atmospheric Pressure Photoionization.

    PubMed

    Vaikkinen, Anu; Kauppila, Tiina J; Kostiainen, Risto

    2016-08-01

    The efficiencies of charge exchange reaction in dopant-assisted atmospheric pressure chemical ionization (DA-APCI) and dopant-assisted atmospheric pressure photoionization (DA-APPI) mass spectrometry (MS) were compared by flow injection analysis. Fourteen individual compounds and a commercial mixture of 16 polycyclic aromatic hydrocarbons were chosen as model analytes to cover a wide range of polarities, gas-phase ionization energies, and proton affinities. Chlorobenzene was used as the dopant, and methanol/water (80/20) as the solvent. In both techniques, analytes formed the same ions (radical cations, protonated molecules, and/or fragments). However, in DA-APCI, the relative efficiency of charge exchange versus proton transfer was lower than in DA-APPI. This is suggested to be because in DA-APCI both dopant and solvent clusters can be ionized, and the formed reagent ions can react with the analytes via competing charge exchange and proton transfer reactions. In DA-APPI, on the other hand, the main reagents are dopant-derived radical cations, which favor ionization of analytes via charge exchange. The efficiency of charge exchange in both DA-APPI and DA-APCI was shown to depend heavily on the solvent flow rate, with best efficiency seen at lowest flow rates studied (0.05 and 0.1 mL/min). Both DA-APCI and DA-APPI showed the radical cation of chlorobenzene at 0.05-0.1 mL/min flow rate, but at increasing flow rate, the abundance of chlorobenzene M(+.) decreased and reagent ion populations deriving from different gas-phase chemistry were recorded. The formation of these reagent ions explains the decreasing ionization efficiency and the differences in charge exchange between the techniques. Graphical Abstract ᅟ.

  3. Nucleophilic Aromatic Substitution Between Halogenated Benzene Dopants and Nucleophiles in Atmospheric Pressure Photoionization.

    PubMed

    Kauppila, Tiina J; Haack, Alexander; Kroll, Kai; Kersten, Hendrik; Benter, Thorsten

    2016-03-01

    In a preceding work with dopant assisted-atmospheric pressure photoionization (DA-APPI), an abundant ion at [M + 77](+) was observed in the spectra of pyridine and quinoline with chlorobenzene dopant. This contribution aims to reveal the identity and route of formation of this species, and to systematically investigate structurally related analytes and dopants. Compounds containing N-, O-, and S-lone pairs were investigated with APPI in the presence of fluoro-, chloro-, bromo-, and iodobenzene dopants. Computational calculations on a density functional theory (DFT) level were carried out to study the reaction mechanism for pyridine and the different halobenzenes. The experimental and computational results indicated that the [M + 77](+) ion was formed by nucleophilic aromatic ipso-substitution between the halobenzene radical cation and nucleophilic analytes. The reaction was most efficient for N-heteroaromatic compounds, and it was weakened by sterical effects and enhanced by resonance stabilization. The reaction was most efficient with chloro-, bromo-, and iodobenzenes, whereas with fluorobenzene the reaction was scarcely observed. The calculated Gibbs free energies for the reaction between pyridine and the halobenzenes were shown to increase in the order I < Br < Cl < F. The reaction was found endergonic for fluorobenzene due to the strong C-F bonding, and exergonic for the other halobenzenes. For fluoro- and chlorobenzenes the reaction was shown to proceed through an intermediate state corresponding to [M + dopant](+), which was highly stable for fluorobenzene. For the bulkier bromine and iodine, this intermediate did not exist, but the halogens were shown to detach already during the approach by the nucleophile.

  4. A Thermodynamic Study of Dopant Interfacial Segregation Effect on Nanostability and Mechanical Properties

    NASA Astrophysics Data System (ADS)

    Wu, Longjia

    Nanoparticles, with great surface area and high surface to volume ratio, have been widely applied in many applications due to their unique size related effects. However, this high surface area character of nanoparticles also brings great excess energy to the whole system, making the system unstable and even causing the failure of nanoparticles, especially at higher temperatures. In order to maintain nanocrystalline structure of the materials, nanostability enhancement is of great significance in nanotechnology. It is well known that the global driving force for particles growth is to eliminate the excess energy brought by surface and grain boundary. Therefore, interfacial energetics has a great influence on the nanostability of the materials. And according to previous studies, dopant interfacial segregation could be a potential way to control the interfacial energetics of the nanoparticles and possibly lead to an improved nanostability. Furthermore, the interfacial energetics even can affect mechanical properties of nano-grain ceramic materials based on recent research. The main goals of the present work were to experimentally measure the interfacial energies of nanoparticles as well as nano-grain ceramics, modify the interfacial energetics through dopant segregation effect and engineer the nanostability and mechanical properties of the nanocrystalline materials through interfacial energetics modification. To achieve this goal, Mn cation has been chosen to introduce Mn interfacial segregation on ceria nanoparticles, and La cation has been added to 12 mol% yttria stabilized zirconia (12YSZ) and magnesium aluminate spinel (MAO) two-phase nano-grain ceramics to cause La interfacial segregation. Both of the dopant segregation phenomena were directly proved by electron energy loss spectroscopy (EELS). To quantify the dopant segregation effect on the interfacial energies, high-temperature oxide melt drop solution calorimetry, water adsorption calorimetry and differential

  5. Charge Exchange Reaction in Dopant-Assisted Atmospheric Pressure Chemical Ionization and Atmospheric Pressure Photoionization

    NASA Astrophysics Data System (ADS)

    Vaikkinen, Anu; Kauppila, Tiina J.; Kostiainen, Risto

    2016-08-01

    The efficiencies of charge exchange reaction in dopant-assisted atmospheric pressure chemical ionization (DA-APCI) and dopant-assisted atmospheric pressure photoionization (DA-APPI) mass spectrometry (MS) were compared by flow injection analysis. Fourteen individual compounds and a commercial mixture of 16 polycyclic aromatic hydrocarbons were chosen as model analytes to cover a wide range of polarities, gas-phase ionization energies, and proton affinities. Chlorobenzene was used as the dopant, and methanol/water (80/20) as the solvent. In both techniques, analytes formed the same ions (radical cations, protonated molecules, and/or fragments). However, in DA-APCI, the relative efficiency of charge exchange versus proton transfer was lower than in DA-APPI. This is suggested to be because in DA-APCI both dopant and solvent clusters can be ionized, and the formed reagent ions can react with the analytes via competing charge exchange and proton transfer reactions. In DA-APPI, on the other hand, the main reagents are dopant-derived radical cations, which favor ionization of analytes via charge exchange. The efficiency of charge exchange in both DA-APPI and DA-APCI was shown to depend heavily on the solvent flow rate, with best efficiency seen at lowest flow rates studied (0.05 and 0.1 mL/min). Both DA-APCI and DA-APPI showed the radical cation of chlorobenzene at 0.05-0.1 mL/min flow rate, but at increasing flow rate, the abundance of chlorobenzene M+. decreased and reagent ion populations deriving from different gas-phase chemistry were recorded. The formation of these reagent ions explains the decreasing ionization efficiency and the differences in charge exchange between the techniques.

  6. Ab initio study of dopant-defect interactions in graphene sheets and graphene nano-ribbons

    NASA Astrophysics Data System (ADS)

    Tawalbeh, Tarek

    Theoretical studies of nanostructured systems, such as doped, defective and pristine graphene and graphene nanoribbons, present a major challenge to conventional computational methods. This thesis presents ab initio calculations based on density functional theory (DFT) to study the structural and electronic properties of doped and defective graphene and graphene 'nanoribbons. Our calculations are carried-out using density-functional pseudopotential approximations combined with the generalized gradient approximation (GGA) for the exchange-correlation functional. Structural optimizations are executed by iterative force minimization using the conjugate gradient algorithm. We investigate the effect of dopants and point defects on graphene and graphene nanoribbons and study the interactions between the two. Binding energies, equilibrium geometries, charge transfer, and exchange-splitting-induced magnetism are calculated. The dependence of dopant-defect separation distance on interaction energy and interaction energy is examined in detail. We find that the interaction energy for on-defect dopant sites is dominated by how well defect geometry accommodates the dopant-carbon interatomic distance. Depending on the site dopant-defect interaction is either attractive or repulsive. Stone-Wales defect-nitrogen pairing was found to induce exchange splitting and magnetism in certain configurations. Nitrogen was also found to passivate single-vacancy dangling bonds and eliminate exchange-splitting induced magnetism; vacancy-nitrogen interactions were found to be mostly attractive. Boron-vacancy pairing can result in a favorable symmetric sp3 configuration, this is the only vacancy-boron pairing were dangling bonds are passivated and magnetism is eliminated; other favorable boron-vacancy pairings maintain exchange splitting and can in some cases enhance it. We found that the effect of dopant-defect separation distance follows a simple inverse power law. Our results indicate that

  7. Further improvement of flame retardancy of polyaniline-deposited paper composite through using phytic acid as dopant or co-dopant.

    PubMed

    Zhou, Yang; Ding, Chunyue; Qian, Xueren; An, Xianhui

    2015-01-22

    Polyaniline (PANI)-deposited electrically conductive and flame retardant paper composite was prepared using phytic acid (PA) as dopant or co-dopant. PA as doping acid greatly improved the flame retardancy of PANI-deposited paper composite whilst the conductivity was lower compared with using 5-sulfosalicylic acid (SSA) as doping acid. Lower temperature was favorable to obtain PANI-deposited paper composite with both higher conductivity and better flame retardancy. Conductivity of PANI-deposited paper composite increased with increase of doping acid concentration and the suitable PA concentration range was 0.15-0.3 mol/L depending on the requirement of conductivity and flame retardancy. The PANI-deposited paper composite was characterized by SEM, TGA and XPS. The outstanding flame retardancy of PA-doped paper composite was caused by the synergetic effect of PANI coating and H3PO4. Both higher flame retardancy and higher conductivity of PANI-deposited paper composite were obtained by co-doping of SSA with PA.

  8. Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals.

    PubMed

    Abdelhady, Ahmed L; Saidaminov, Makhsud I; Murali, Banavoth; Adinolfi, Valerio; Voznyy, Oleksandr; Katsiev, Khabiboulakh; Alarousu, Erkki; Comin, Riccardo; Dursun, Ibrahim; Sinatra, Lutfan; Sargent, Edward H; Mohammed, Omar F; Bakr, Osman M

    2016-01-21

    Controllable doping of semiconductors is a fundamental technological requirement for electronic and optoelectronic devices. As intrinsic semiconductors, hybrid perovskites have so far been a phenomenal success in photovoltaics. The inability to dope these materials heterovalently (or aliovalently) has greatly limited their wider utilizations in electronics. Here we show an efficient in situ chemical route that achieves the controlled incorporation of trivalent cations (Bi(3+), Au(3+), or In(3+)) by exploiting the retrograde solubility behavior of perovskites. We term the new method dopant incorporation in the retrograde regime. We achieve Bi(3+) incorporation that leads to bandgap tuning (∼300 meV), 10(4) fold enhancement in electrical conductivity, and a change in the sign of majority charge carriers from positive to negative. This work demonstrates the successful incorporation of dopants into perovskite crystals while preserving the host lattice structure, opening new avenues to tailor the electronic and optoelectronic properties of this rapidly emerging class of solution-processed semiconductors.

  9. Enhanced flux pinning in GdBaCuO bulk superconductors by Zr dopants

    NASA Astrophysics Data System (ADS)

    Xu, C.; Hu, A.; Ichihara, M.; Sakai, N.; Izumi, M.; Hirabayashi, I.

    2007-10-01

    We, respectively, fabricated GdBa2Cu3O7-δ (Gd123) single domain superconductors by melt growth process in air with Gd2Ba4CuZrOx (GdZr2411) and nanosize ZrO2 dopants. The microstructures and superconducting properties were investigated by scanning/transmission electron microscopy (SEM/TEM) and SQUID. GdZr2411 and BaZrO3 particles with the average size of 50 nm were observed in the GdZr2411 and nanosize ZrO2 doped Gd123 bulks by TEM, respectively. Critical current density (Jc) was enhanced up to 100,000 A/cm2 at 77 K and self-field with 0.4 mol% nano-sized ZrO2. The present study also showed that small amount GdZr2411 dopants (8 mol%, ratio to Gd123) were effective to induce a δTc-type pinning.

  10. Investigation of deep level transient spectroscopy (DLTS) of dopant ZnO-based varistors

    NASA Astrophysics Data System (ADS)

    Ammar, A. H.; Farag, A. A. M.

    2010-03-01

    This work shows that the use of conventional analytical procedures to investigate the deep centers from the deep levels transient spectroscopy (DLTS) for ZnO varistors doped with single, double and ternary dopants of Bi 2O 3, CoO and MnO 2. This is to clarify the effect of these doping atoms on the conductivity of ZnO varistors. The results showed that the doping with Bi 2O 3 +CoO leads to a decrease in the conductivity while doping with Bi 2O 3+MnO 2 increased the conductivity and the three dopants together showed a compensating effect. The DLTS characterizing parameters such as minority-carrier capture cross-section, σ, effective density of states in the minority-carrier band, N D, energy separation between the trap level and the minority-carrier band, Δ E t and electron trap density, N t for each doped varistor were also calculated.

  11. Electron probe microanalysis of the dopant concentrations in complex perovskite ferroelectrics

    NASA Astrophysics Data System (ADS)

    Samardžija, Z.

    2016-02-01

    Quantitative EPMA-WDS microanalyses were applied for the compositional characterisation of complex perovskite ferroelectrics based on cerium-doped barium titanate, a solid solution between lead-magnesium-niobate/lead-titanate and niobium-doped barium- bismuth-titanate. The analyses were optimized for high analytical sensitivity, precision and an ultimate accuracy of ≈ ± 1 % relative. The inherent problem with the WDS peak overlap of the Ce-Lα1 and Ba-Lβ1,4 spectral lines was solved by introducing overlap-correction methods in order to obtain consistent quantitative results for the Ce-doped BaTiO3. The quantitative results made it possible to obtain accurate chemical formulae for these materials, to determine the solubility of the dopants as well as to define the mode of the dopant incorporation and the charge-compensation mechanisms.

  12. Characterization of Spin-on Dopant by Sol-gel Method

    NASA Astrophysics Data System (ADS)

    Kamil, S. Ahmad; Ibrahim, K.; Aziz, A. Abdul

    2008-05-01

    P-N junction is a basic building block for many important electron devices from as simple as a solar cell to very complicated integrated circuit. In this work, spin-on dopant (SOD) was used as the diffusion source in order to create p-n junction. SOD was prepared by using sol gel method. The spin-on dopant solution ingredients contain tetraethylorthosilicate (TEOS), isopropanol (IPA), distilled water (H2O), acetone and phosphoric acid (H3PO4). The coated silicon wafers were put inside the conventional furnace for predepostion and drive in oxidation. Effect caused by varying the molarity of the acid were observed and studied using Hall Effect measurement by comparing their differences in sheet resistance, mobility, resistivity as well as sheet and bulk concentaration.

  13. Radiation tolerant polymeric films through the incorporation of small molecule dopants in the polymer matrix

    SciTech Connect

    Lenhart, Joseph L.; Cole, Phillip J.; Cole, Shannon M.; Schroeder, John L.; Belcher, Michael E.

    2008-01-15

    Radiation induced conductivity (RIC) in semicrystalline polyethylene terephthalate (PET) films can be reduced by incorporating small molecule electron traps into the polymer. The electron traps contained an aromatic core with strong electron withdrawing functionality pendant to the core and were incorporated into the PET film by immersing the polymer in a solution of dopant and solvent at elevated temperatures. The chemical functionality of the electron trapping molecule and the number of pendant functional groups had a strong impact on the equilibrium doping level and the most effective doping solvent. In addition, all of the electron traps exhibited effectiveness at reducing the RIC. The technique of incorporating small molecule dopants into the polymer matrix in order to reduce the RIC can potentially be exploited with other polymers films and coatings utilized in electronics devices such as encapsulants, conformal coatings, and polymeric underfills.

  14. Transparent organic p-dopant in carbon nanotubes: bis(trifluoromethanesulfonyl)imide.

    PubMed

    Kim, Soo Min; Jo, Young Woo; Kim, Ki Kang; Duong, Dinh Loc; Shin, Hyeon-Jin; Han, Jong Hun; Choi, Jae-Young; Kong, Jing; Lee, Young Hee

    2010-11-23

    We propose bis(trifluoromethanesulfonyl)imide [(CF(3)SO(2))(2)N](-) (TFSI) as a transparent strong electron-withdrawing p-type dopant in carbon nanotubes (CNTs). The conventional p-dopant, AuCl(3), has several drawbacks, such as hygroscopic effect, formation of Au clusters, decrease in transmittance, and high cost in spite of the significant increase in conductivity. TFSI is converted from bis(trifluoromethanesulfonyl)amine (TFSA) by accepting electrons from CNTs, subsequently losing a proton as a characteristic of a Brønsted acid, and has an inductive effect from atoms with high electronegativity, such as halogen, oxygen, and nitrogen. TFSI produced a similar improvement in conductivity to AuCl(3), while maintaining high thermal stability, and no appreciable change in transmittance with no cluster formation. The effectiveness of TFSI was compared with that of other derivatives.

  15. The determination of dopant ion valence distributions in insulating crystals using XANES measurements.

    PubMed

    Hughes-Currie, Rosa B; Ivanovskikh, Konstantin V; Wells, Jon-Paul R; Reid, Michael F; Gordon, Robert A

    2016-04-06

    Ytterbium-doped wide-bandgap fluoride crystals CaF2, SrF2 and NaMgF3 have been measured using x-ray absorption near edge structure (XANES) on the L3 edge to determine the ratio of trivalent to divalent Yb ions present in the crystals. This study improves upon previous XANES measurements of dopant ion valency by taking into account the x-ray emission transition probabilities for the divalent and trivalent species instead of simply assuming that the relative concentrations may be determined by the ratio of the x-ray excitation band areas. Trivalent to divalent ratios as high as 5 are inferred even at low total dopant ion concentrations of 0.05 mol% Yb.

  16. The determination of dopant ion valence distributions in insulating crystals using XANES measurements

    NASA Astrophysics Data System (ADS)

    Hughes-Currie, Rosa B.; Ivanovskikh, Konstantin V.; Wells, Jon-Paul R.; Reid, Michael F.; Gordon, Robert A.

    2016-04-01

    Ytterbium-doped wide-bandgap fluoride crystals CaF2, SrF2 and NaMgF3 have been measured using x-ray absorption near edge structure (XANES) on the L3 edge to determine the ratio of trivalent to divalent Yb ions present in the crystals. This study improves upon previous XANES measurements of dopant ion valency by taking into account the x-ray emission transition probabilities for the divalent and trivalent species instead of simply assuming that the relative concentrations may be determined by the ratio of the x-ray excitation band areas. Trivalent to divalent ratios as high as 5 are inferred even at low total dopant ion concentrations of 0.05 mol% Yb.

  17. Continuous or discrete: Tuning the energy level alignment of organic layers with alkali dopants

    NASA Astrophysics Data System (ADS)

    Ules, Thomas; Lüftner, Daniel; Reinisch, Eva Maria; Koller, Georg; Puschnig, Peter; Ramsey, Michael G.

    2016-11-01

    This paper investigates the effects of cesium (Cs) deposited on pentacene (5A) and sexiphenyl (6P) monolayers on the Ag(110) substrate. The process of doping and the energy level alignment are studied quantitatively and contrasted. While ultimately for both molecules lowest unoccupied molecular orbital (LUMO) filling on charge transfer upon Cs dosing is observed, the doping processes are tellingly different. In the case of 5A, hybrid molecule-substrate states and doping states coexist at lowest Cs exposures, while for 6P doping states appear only after Cs has completely decoupled the monolayer from the substrate. With the support of density functional theory calculations, this different behavior is rationalized by the local character of electrostatic potential changes induced by dopants in relation to the spatial extent of the molecules. This also has severe effects on the energy level alignment, which for most dopant/molecule systems cannot be considered continuous but discrete.

  18. Two-dimensional dopant profiling of gallium nitride p-n junctions by scanning capacitance microscopy

    NASA Astrophysics Data System (ADS)

    Lamhamdi, M.; Cayrel, F.; Frayssinet, E.; Bazin, A. E.; Yvon, A.; Collard, E.; Cordier, Y.; Alquier, D.

    2016-04-01

    Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging task since it needs a technique with simultaneously good sensitivity, high spatial resolution and high dopant gradient resolution. To face these challenges, scanning capacitance microscopy combined with Atomic Force Microscopy is a good candidate, presenting reproducible results, as demonstrated in literature. In this work, we attempt to distinguish reliably and qualitatively the various doping concentrations and type at p-n and unipolar junctions. For both p-n and unipolar junctions three kinds of samples were prepared and measured separately. The space-charge region of the p-n metallurgical junction, giving rise to different contrasts under SCM imaging, is clearly observed, enlightening the interest of the SCM technique.

  19. High Resolution Dopant Profiles Revealed by Atom Probe Tomography and STEM-EBIC for CdTe Based Solar Cells

    SciTech Connect

    Poplawsky, Jonathan D.; Li, Chen; Paudel, Naba; Guo, Wei; Yan, Yanfa; Pennycook, Stephen J.

    2016-01-01

    Segregated elements and their diffusion profiles within grain boundaries and interfaces resulting from post deposition heat treatments are revealed using atom probe tomography (APT), scanning transmission electron microscopy (STEM), and electron beam induced current (EBIC) techniques. The results demonstrate how these techniques complement each other to provide conclusive evidence for locations of space charge regions and mechanisms that create them at the nanoscale. Most importantly, a Cl dopant profile that extends ~5 nm into CdTe grains interfacing the CdS is shown using APT and STEM synergy, which has been shown to push the pn-junction into the CdTe layer indicative of a homojunction (revealed by STEM EBIC). In addition, Cu and Cl concentrations within grain boundaries within several nms and µms from the CdS/CdTe interface are compared, Na segregation of <0.1% is detected, and S variations of ~1–3% are witnessed between CdTe grains close to the CdS/CdTe interface. The segregation and diffusion of these elements directly impacts on the material properties, such as band gap energy and n/p type properties. Optimization of the interfacial and grain boundary doping will lead to higher efficiency solar cells.

  20. High Resolution Dopant Profiles Revealed by Atom Probe Tomography and STEM-EBIC for CdTe Based Solar Cells

    DOE PAGES

    Poplawsky, Jonathan D.; Li, Chen; Paudel, Naba; ...

    2016-01-01

    Segregated elements and their diffusion profiles within grain boundaries and interfaces resulting from post deposition heat treatments are revealed using atom probe tomography (APT), scanning transmission electron microscopy (STEM), and electron beam induced current (EBIC) techniques. The results demonstrate how these techniques complement each other to provide conclusive evidence for locations of space charge regions and mechanisms that create them at the nanoscale. Most importantly, a Cl dopant profile that extends ~5 nm into CdTe grains interfacing the CdS is shown using APT and STEM synergy, which has been shown to push the pn-junction into the CdTe layer indicative ofmore » a homojunction (revealed by STEM EBIC). In addition, Cu and Cl concentrations within grain boundaries within several nms and µms from the CdS/CdTe interface are compared, Na segregation of <0.1% is detected, and S variations of ~1–3% are witnessed between CdTe grains close to the CdS/CdTe interface. The segregation and diffusion of these elements directly impacts on the material properties, such as band gap energy and n/p type properties. Optimization of the interfacial and grain boundary doping will lead to higher efficiency solar cells.« less

  1. Final results from the SDC dopant search for new green wavelength shifting (WLS) fibers: Volume 1

    SciTech Connect

    Pla-Dalmau, A.; Foster, G.W.; Zhang, G.

    1993-12-01

    A scintillating tile/fiber design had been selected for the SDC calorimeter. It consisted of scintillator plates embedded with a wavelength shifting (WLS) fiber which was spliced to a clear fiber. Based on the results from previous radiation damage studies on different scintillating materials, SCSN38 had been chosen for the scintillating tile and BCF91 or Y7 for the WLS fiber. SCSN38 is a blue-emitting scintillator and both WLS fibers use K-27, a green-emitting compound, as dopant. K-27 has a decay time of approximately 12 ns which is long in comparison to that of most blue-emitting materials. Of all the factors that affect the speed of the scintillator tile/fiber calorimeter, the lifetime of the green-emitting dopant is the dominant component. To increase the speed of the calorimeter, it would be desirable that the green WLS fibers utilized had lifetimes between 3 and 5 ns. However, currently available green WLS fibers exhibit decay times between 7 and 12 ns. Development of new green-emitting WLS fibers with short decay times must be investigated. The goal of this project was to search for commercially available fluorescent compounds with {lambda}{sub abs} = 400--450 nm, {lambda}{sub em} = 450--550 nm, {tau} = 3--7 ns, and quantum efficiency of minimum 0.7 (current K-27 baseline). Large Stokes shift and low self-absorption were not important requirements since the optical pathlength for the shifted light was small. Characterization of the spectroscopic properties of these compounds after styrene polymerization is important since this is an essential part of the manufacturing of WLS fibers. This summary presents the transmittance and fluorescence data for each dopant tested. However, many fluorescence measurements using different excitation wavelengths and orientations were recorded. Volume 1 presents a plot for each dopant combining transmittance and the most representative fluorescence measurement.

  2. Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires.

    PubMed

    Choi, Wonsik; Seabron, Eric; Mohseni, Parsian K; Kim, Jeong Dong; Gokus, Tobias; Cernescu, Adrian; Pochet, Pascal; Johnson, Harley T; Wilson, William L; Li, Xiuling

    2017-02-28

    Selective lateral epitaxial (SLE) semiconductor nanowires (NWs), with their perfect in-plane epitaxial alignment, ability to form lateral complex p-n junctions in situ, and compatibility with planar processing, are a distinctive platform for next-generation device development. However, the incorporation and distribution of impurity dopants in these planar NWs via the vapor-liquid-solid growth mechanism remain relatively unexplored. Here, we present a detailed study of SLE planar GaAs NWs containing multiple alternating axial segments doped with Si and Zn impurities by metalorganic chemical vapor deposition. The dopant profile of the lateral multi-p-n junction GaAs NWs was imaged simultaneously with nanowire topography using scanning microwave impedance microscopy and correlated with infrared scattering-type near-field optical microscopy. Our results provide unambiguous evidence that Zn dopants in the periodically twinned and topologically corrugated p-type segments are preferentially segregated at twin plane boundaries, while Si impurity atoms are uniformly distributed within the n-type segments of the NWs. These results are further supported by microwave impedance modulation microscopy. The density functional theory based modeling shows that the presence of Zn dopant atoms reduces the formation energy of these twin planes, and the effect becomes significantly stronger with a slight increase of Zn concentration. This implies that the twin formation is expected to appear when a threshold planar concentration of Zn is achieved, making the onset and twin periodicity dependent on both Zn concentration and nanowire diameter, in perfect agreement with our experimental observations.

  3. Influence of dopant substitution mechanism on catalytic properties within hierarchical architectures

    NASA Astrophysics Data System (ADS)

    Newland, Stephanie H.; Sinkler, Wharton; Mezza, Thomas; Bare, Simon R.; Raja, Robert

    2016-07-01

    A range of hierarchically porous (HP) AlPO-5 catalysts, with isomorphously substituted transition metal ions, have been synthesized using an organosilane as a soft template. By employing a range of structural and spectroscopic characterization protocols, the properties of the dopant-substituted species within the HP architectures have been carefully evaluated. The resulting nature of the active site is shown to have a direct impact on the ensuing catalytic properties in the liquid-phase Beckmann rearrangement of cyclic ketones.

  4. Effect of dopants on crystal structure and thermal properties of pentaglycerine

    SciTech Connect

    Chandra, D.; Ding, W.

    1989-03-01

    The overall objective of this research program is to develop practical solid-state thermal energy storage materials. Research is focused on polyalcohol {open_quotes}Plastic Crystals{close_quotes} which undergo crystallographic changes at constant transition temperature absorbing or releasing amounts of latent heat. The known pure polyalcohols have high transition temperatures; therefore, adjustment of transformation temperature is important to develop practical materials. The approach taken is to introduce substitutional and interstitial dopants so as to strain the lattice of the host crystal which results in lowering the transition temperature. Current research is on temperature adjustment of pentaglycerine [PG] (C{sub 5}H{sub 12}O{sub 3}) initiated approximately four months ago. Results, so far, show that the substitutional dopants are more effective in reducing the transition temperature than interstitial dopants. The results in the first phase of this program show that the transition temperature of PG reduced significantly by using trimethylol propane [TMP] (C{sub 6}H{sub 14}O{sub 3}), 2-amino 2-methyl 1,3 propanediol [AMPL] (C{sub 4}H{sub 11}NO{sub 2}) as dopants. It appears that some of these doped samples have near room temperature transitions; however, these results are not conclusive at this time. Recently, it was discovered that TMP has an additional solid-solid phase transformation, slightly below room temperature. Crystal structure analyses showed some surprising results with regards to thermal expansion behavior of PG. Several sets of low as well as high temperature data were obtained from the pure and doped PG to characterize the structural changes, if any, and the thermal expansions. Research is in progress on crystal structure and thermal analyses.

  5. Atomistic Interrogation of B–N Co-dopant Structures and Their Electronic Effects in Graphene

    SciTech Connect

    Schiros, Theanne; Nordlund, Dennis; Palova, Lucia; Zhao, Liuyan; Levendorf, Mark; Jaye, Cherno; Reichman, David; Park, Jiwoong; Hybertsen, Mark; Pasupathy, Abhay

    2016-06-21

    Chemical doping has been demonstrated to be an effective method for producing high-quality, large-area graphene with controlled carrier concentrations and an atomically tailored work function. Furthermore, the emergent optoelectronic properties and surface reactivity of carbon nanostructures are dictated by the microstructure of atomic dopants. Co-doping of graphene with boron and nitrogen offers the possibility to further tune the electronic properties of graphene at the atomic level, potentially creating p- and n-type domains in a single carbon sheet, opening a gap between valence and conduction bands in the 2-D semimetal. When using a suite of high-resolution synchrotron-based X-ray techniques, scanning tunneling microscopy, and density functional theory based computation we visualize and characterize B–N dopant bond structures and their electronic effects at the atomic level in single-layer graphene grown on a copper substrate. We find there is a thermodynamic driving force for B and N atoms to cluster into BNC structures in graphene, rather than randomly distribute into isolated B and N graphitic dopants, although under the present growth conditions, kinetics limit segregation of large B–N domains. We also observe that the doping effect of these BNC structures, which open a small band gap in graphene, follows the B:N ratio (B > N, p-type; B < N, n-type; B=N, neutral). We attribute this to the comparable electron-withdrawing and -donating effects, respectively, of individual graphitic B and N dopants, although local electrostatics also play a role in the work function change.

  6. Atomistic Interrogation of B–N Co-dopant Structures and Their Electronic Effects in Graphene

    DOE PAGES

    Schiros, Theanne; Nordlund, Dennis; Palova, Lucia; ...

    2016-06-21

    Chemical doping has been demonstrated to be an effective method for producing high-quality, large-area graphene with controlled carrier concentrations and an atomically tailored work function. Furthermore, the emergent optoelectronic properties and surface reactivity of carbon nanostructures are dictated by the microstructure of atomic dopants. Co-doping of graphene with boron and nitrogen offers the possibility to further tune the electronic properties of graphene at the atomic level, potentially creating p- and n-type domains in a single carbon sheet, opening a gap between valence and conduction bands in the 2-D semimetal. When using a suite of high-resolution synchrotron-based X-ray techniques, scanning tunnelingmore » microscopy, and density functional theory based computation we visualize and characterize B–N dopant bond structures and their electronic effects at the atomic level in single-layer graphene grown on a copper substrate. We find there is a thermodynamic driving force for B and N atoms to cluster into BNC structures in graphene, rather than randomly distribute into isolated B and N graphitic dopants, although under the present growth conditions, kinetics limit segregation of large B–N domains. We also observe that the doping effect of these BNC structures, which open a small band gap in graphene, follows the B:N ratio (B > N, p-type; B < N, n-type; B=N, neutral). We attribute this to the comparable electron-withdrawing and -donating effects, respectively, of individual graphitic B and N dopants, although local electrostatics also play a role in the work function change.« less

  7. Density functional theory study of dopants in polycrystalline TiO2

    NASA Astrophysics Data System (ADS)

    Körner, Wolfgang; Elsässer, Christian

    2011-05-01

    We present a density functional theory (DFT) study of doped rutile and anatase TiO2 in which we investigate the impact of grain boundaries on the physics of atomic defects. The main goal is to obtain information about the positions of the defect levels generated by an oxygen vacancy, a titanium interstitial, cation dopants Nb, Al, and Ga, and an anion dopant N in the electronic band gap having in mind the application of TiO2 as a transparent conducting oxide (TCO) or its use in heterogeneous catalysis. Due to the known deficiency of the local density approximation (LDA) of DFT to yield accurate values for band gap energies for insulators such as TiO2, a self-interaction correction (SIC) to the LDA is employed. The main result of our study is that grain boundaries do affect the defect formation energies as well as the position and shape of the dopant-induced electronic energy levels significantly with respect to the single crystal. According to our study Nb doping may lead to n-conducting TiO2 whereas doping with N, Al, or Ga is not promising in order to achieve p-conducting TiO2. Furthermore an increase in the photoconductivity of TiO2:N and the colorlessness of TiO2:Al may be explained by our results.

  8. Discrete random distribution of source dopants in nanowire tunnel transistors (TFETs)

    NASA Astrophysics Data System (ADS)

    Sylvia, Somaia; Abul Khayer, M.; Alam, Khairul; Park, Hong-Hyun; Klimeck, Gerhard; Lake, Roger

    2013-03-01

    InAs and InSb nanowire (NW) tunnel field effect transistors (TFETs) require highly degenerate source doping to support the high electric fields in the tunnel region. For a target on-current of 1 μA , the doping requirement may be as high as 1 . 5 ×1020cm-3 in a NW with diameter as low as 4 nm. The small size of these devices demand that the dopants near tunneling region be treated discretely. Therefore, the effects resulting from the random distribution of dopant atoms in the source of a TFET are studied for 30 test devices. Comparing with the transfer characteristics of the same device simulated with a continuum doping model, our results show (1) a spread of I - V toward the positive gate voltage axis, (2) the same average threshold voltage, (3) an average 62% reduction in the on current, and (4) a slight degradation of the subthreshold slope. Random fluctuations in both the number and placement of dopants will be discussed. Also, as the channel length is scaled down, direct tunneling through the channel starts limiting the device performance. Therefore, a comparison of materials is also performed, showing their ability to block direct tunneling for sub-10 nm channel FETs and TFETs. This work was supported in part by the Center on Functional Engineered Nano Architectonics and the Materials, Structures and Devices Focus Center, under the Focus Center Research Program, and by the National Science Foundation under Grant OCI-0749140

  9. Dopant effects on charge transport to enhance performance of phosphorescent white organic light emitting diodes

    SciTech Connect

    Zhu, Liping; Chen, Jiangshan; Ma, Dongge

    2015-11-07

    We compared the performance of phosphorescent white organic light emitting diodes (WOLEDs) with red-blue-green and green-blue-red sequent emissive layers. It was found that the influence of red and green dopants on electron and hole transport in emissive layers leads to the large difference in the efficiency of fabricated WOLEDs. This improvement mechanism is well investigated by the current density-voltage characteristics of single-carrier devices based on dopant doped emissive layers and the comparison of electroluminescent and photoluminescence spectra, and attributed to the different change of charge carrier transport by the dopants. The optimized device achieves a maximum power efficiency, current efficiency, and external quantum efficiency of 37.0 lm/W, 38.7 cd/A, and 17.7%, respectively, which are only reduced to 32.8 lm/W, 38.5 cd/A, and 17.3% at 1000 cd/m{sup 2} luminance. The critical current density is as high as 210 mA/cm{sup 2}. It can be seen that the efficiency roll-off in phosphorescent WOLEDs can be well improved by effectively designing the structure of emissive layers.

  10. New cyclometalated iridium(III) complex as a phosphorescent dopant in organic light emitting devices

    NASA Astrophysics Data System (ADS)

    Ivanov, P.; Tomova, R.; Petrova, P.; Stanimirov, S.; Petkov, I.

    2014-05-01

    A new cyclometalated iridium (III) bis[2-(4-chlorophenyl)benzothiazolato-N,C2]-acetylacetonate, (Cl-bt)2Ir(acac), was synthesized and identified by 1H NMR and elemental analysis. The application was studied of the new compound as a dopant in the hole transporting layer (HTL) of the following organic light emitting diode (OLED) structure: HTL/EL/ETL, where HTL was 4,4'-bis(9H-carbazol-9-yl)biphenyl (CBP) or N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD), incorporated in a poly(N-vinylcarbazole) (PVK) matrix; EL was an electroluminescent layer of bis(8-hydroxy-2-methylquinoline)-(4-phenylpheno-xy) aluminum (BAlq); and ETL was an electron-transporting layer of bis[2-(2-benzothiazoly) phenolato]zinc(II) (Zn(btz)2). We established that the electroluminescence spectra of the OLEDs at different dopant concentrations were basically the sum of the greenish-blue emission of BAlq and the yellowish-green emission of the Ir complex. It was also found that increasing the dopant concentration resulted in an increase in the relative electroluminescent intensity of the Ir complex emission, while that of BAlq decreased, thus a fine tuning of the OLED color was observed.

  11. Spontaneous reorientation from planar to homeotropic alignment in dual-frequency mixture doped with chiral dopant

    NASA Astrophysics Data System (ADS)

    Perkowski, Paweł; Mrukiewicz, Mateusz; Chojnowska, Olga; Piecek, Wiktor; Dąbrowski, Roman

    2014-11-01

    We investigate a dual-frequency (DF) nematic mixture by means of the dielectric spectroscopy. A chiral dopant has been added to the DF matrix. A pure DF matrix as well as three samples with increasing concentration of chiral dopant (DF*) have been prepared. Investigated samples have shown a selective reflection band, according to a helical pitch induced in proportion to the chiral dopant amount. Such system promises a great application potential as a selective light reflecting shutter or spectral filter due to nearly symmetrical switching times and defectless structures. When we put the non-doped DF mixture into homogenous (HG) oriented cell we found that planar orientation is permanent on both cooling and heating cycles. In the case of DF* chiral mixtures, the behavior changes substantially. One can observe that the oriented virgin planar structure of DF* within the HG cell starts to change its orientation to homeotropic one at different temperature. When heating is continued the homeotropic orientation in the HG cell is preserved up to the clearing temperature. Upon a subsequent cooling from the isotropic state, the homeotropic orientation is preserved within the whole mesogenic state. The effect of induction of the homeotropic state observed within HG cells is analyzed and discussed.

  12. Nitrogen oxides as dopants for the detection of aromatic compounds with ion mobility spectrometry.

    PubMed

    Gaik, Urszula; Sillanpää, Mika; Witkiewicz, Zygfryd; Puton, Jarosław

    2017-03-03

    Limits of detection (LODs) in ion mobility spectrometry (IMS) strictly depend on ionization of the analyte. Especially challenging is ionization of compounds with relatively low proton affinity (PA) such as aromatic compounds. To change the course of ion-molecule reactions and enhance the performance of the IMS spectrometer, substances called dopants are introduced into the carrier gas. In this work, we present the results of studies of detection using nitrogen oxides (NOx) dopants. Three aromatic compounds, benzene, toluene, toluene diisocyanate and, for comparison, two compounds with high PA, dimethyl methylphosphonate (DMMP) and triethyl phosphate (TEP), were selected as analytes. The influence of water vapour on these analyses was also studied. Experiments were carried out with a generator of gas mixtures that allowed for the simultaneous introduction of three substances into the carrier gas. The experiments showed that the use of NOx dopants significantly decreases LODs for aromatic compounds and does not affect the detection of compounds with high PA. The water vapour significantly disturbs the detection of aromatic compounds; however, doping with NOx allows to reduce the effect of humidity. Graphical Abstract Two possible ionization mechanisms of aromatic compounds in ion mobility spectrometry: proton transfer reaction and adduct formation.

  13. Quantum simulation of the Hubbard model with dopant atoms in silicon

    PubMed Central

    Salfi, J.; Mol, J. A.; Rahman, R.; Klimeck, G.; Simmons, M. Y.; Hollenberg, L. C. L.; Rogge, S.

    2016-01-01

    In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose–Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements and cooling remain problematic, while only ensemble measurements have been achieved. Here we simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution using subsurface dopants in silicon. We measure quasi-particle tunnelling maps of spin-resolved states with atomic resolution, finding interference processes from which the entanglement entropy and Hubbard interactions are quantified. Entanglement, determined by spin and orbital degrees of freedom, increases with increasing valence bond length. We find separation-tunable Hubbard interaction strengths that are suitable for simulating strongly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubbard model. PMID:27094205

  14. Instability of the Characteristic Emissions of Dopant Tb in ZnO Hexagonal Pyramids

    NASA Astrophysics Data System (ADS)

    Zhai, Bao-gai; Ma, Qing-lan; Huang, Yuan Ming

    2017-02-01

    Tb-doped ZnO hexagonal pyramids with the doping level of 0.1 mol.% were synthesized by thermal decomposing the mixture of zinc nitrate and terbium nitrate at 500°C in an air-filled furnace. The crystal structures and photoluminescent properties of Tb-doped ZnO hexagonal pyramids were analyzed with a scanning electron microscope, x-ray diffractometer, fluorescence spectrophotometer and photoluminescence excitation spectrophotometer. Four characteristic emission peaks of Tb3+ ions were recorded over the broad green luminescent band of ZnO, at 488 nm, 544 nm, 584 nm and 620 nm for Tb-doped ZnO hexagonal pyramids. The characteristic emissions of the rare-earth dopant in Tb-doped ZnO were found to be unstable when stored in air. The 544-nm emission of dopant Tb in ZnO lost 12%, 37%, 78%, and 100% of its original intensity after stored in air for 2 months, 4 months, 6 months, and 8 months, respectively. With the help of calculated band structures, our results suggest that the instability of the characteristic emissions of dopant Tb in ZnO can be attributed to the possible expulsion of Tb out of the ZnO host.

  15. Effect of isovalent dopants on photodegradation ability of ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Khaparde, Rohini; Acharya, Smita

    2016-06-01

    Isovalent (Mn, Cd, Cu, Co)-doped-ZnS nanoparticles having size vary in between 2 to 5 nm are synthesized by co-precipitation route. Their photocatalytic activity for decoloration of Cango Red and Malachite Green dyes is tested in visible radiation under natural conditions. Structural and morphological features of the samples are investigated by X-ray diffraction, Raman spectroscopy, Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) and UVsbnd Vis spectrometer. Single phase zinc blende structure of as-synthesized undoped and doped-ZnS is confirmed by XRD and revealed by Rietveld fitting. SEM and TEM images show ultrafine nanoparticles having size in the range of 2 to 5 nm. UV-Vis absorption spectra exhibit blue shift in absorption edge of undoped and doped ZnS as compared to bulk counterpart. The photocatalytic activity as a function of dopant concentration and irradiation time is systematically studied. The rate of de-coloration of dyes is detected by UVsbnd Vis absorption spectroscopy and organic dye mineralization is confirmed by table of carbon (TOC) study. The photocatalytic activity of Mn-doped ZnS is highest amongst all dopants; however Co as a dopant is found to reduce photocatalytic activity than pure ZnS.

  16. Dopant-Enabled Supramolecular Approach for Controlled Synthesis of Nanostructured Conductive Polymer Hydrogels.

    PubMed

    Wang, Yaqun; Shi, Ye; Pan, Lijia; Ding, Yu; Zhao, Yu; Li, Yun; Shi, Yi; Yu, Guihua

    2015-11-11

    Conducting polymer hydrogels emerge as a novel class of polymeric materials that show great potential in many energy, environmental, and biomedical devices. We describe here for the first time a general supramolecular approach toward controlled in situ synthesis of one-dimensional nanostructured conductive hydrogels (polypyrrole (PPy) as a model system) using a rational dopant counterion, which is a disc-shaped liquid crystal molecular copper phthalocyanine-3,4',4″,4‴-tetrasulfonic acid tetrasodium salt (CuPcTs). The dopant molecule CuPcTs cross-linked the PPy chains to form a three-dimensional network that gelated into a hydrogel. The PPy hydrogel could be synthesized in bulk quantities with uniform morphology of self-assembled interconnected nanofibers. The tetra-functional dopant favors a supramolecular self-assembly mechanism to form one-dimensional PPy nanostructures. Furthermore, the enhanced interchain charge transport of CuPcTs doped PPy resulted in greatly enhanced conductivity and pseudocapacitance compared with pristine PPy.

  17. Structure-property-composition relationships in doped zinc oxides: enhanced photocatalytic activity with rare earth dopants.

    PubMed

    Goodall, Josephine B M; Illsley, Derek; Lines, Robert; Makwana, Neel M; Darr, Jawwad A

    2015-02-09

    In this paper, we demonstrate the use of continuous hydrothermal flow synthesis (CHFS) technology to rapidly produce a library of 56 crystalline (doped) zinc oxide nanopowders and two undoped samples, each with different particle properties. Each sample was produced in series from the mixing of an aqueous stream of basic zinc nitrate (and dopant ion or modifier) solution with a flow of superheated water (at 450 °C and 24.1 MPa), whereupon a crystalline nanoparticle slurry was rapidly formed. Each composition was collected in series, cleaned, freeze-dried, and then characterized using analytical methods, including powder X-ray diffraction, transmission electron microscopy, Brunauer-Emmett-Teller surface area measurement, X-ray photoelectron spectroscopy, and UV-vis spectrophotometry. Photocatalytic activity of the samples toward the decolorization of methylene blue dye was assessed, and the results revealed that transition metal dopants tended to reduce the photoactivity while rare earth ions, in general, increased the photocatalytic activity. In general, low dopant concentrations were more beneficial to having greater photodecolorization in all cases.

  18. Quantum simulation of the Hubbard model with dopant atoms in silicon.

    PubMed

    Salfi, J; Mol, J A; Rahman, R; Klimeck, G; Simmons, M Y; Hollenberg, L C L; Rogge, S

    2016-04-20

    In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements and cooling remain problematic, while only ensemble measurements have been achieved. Here we simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution using subsurface dopants in silicon. We measure quasi-particle tunnelling maps of spin-resolved states with atomic resolution, finding interference processes from which the entanglement entropy and Hubbard interactions are quantified. Entanglement, determined by spin and orbital degrees of freedom, increases with increasing valence bond length. We find separation-tunable Hubbard interaction strengths that are suitable for simulating strongly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubbard model.

  19. Simulations of Ar gas-puff implosions on Z with a Xe dopant

    NASA Astrophysics Data System (ADS)

    Tangri, Varun; Giuliani, J. L.; Velikovich, A. L.; Ouart, N. D.; Dasgupta, A.; Thornhill, J. W.; Apruzese, J. P.; Harvey-Thompson, A. J.; Jones, B.; Jennings, C. A.

    2016-10-01

    A recent experiment on the Z machine at SNL indicated that the presence of a small fraction of Xe (0.8% by number in the center jet) in a Ar gas puff shot had a significant effect on the emitted K-shell radiation. In presence of the Xe dopant, the Ar K-shell yield dramatically reduced from 373 +/-9 to 129 +/-9 kJ. The peak K-shell power was also significantly lower and accompanied by two nearly equal peaks. A second shot without the Xe dopant consisted of a single peak. We present radiation-magnetohydrodynamic simulations of these shots [Z2603 (with Xe) and Z2605 (without Xe)] using the using the Mach2-TCRE code with a tabulated collisional radiative equilibrium model. Detailed numerical simulations exploring the impact of the Xe dopant on the implosion dynamics and the resultant K-shell radiation will be presented. Analysis of a time- and space resolved synthetic K-shell spectra would also be presented. Work supported by the DOE/NNSA. SNL is a multi-program laboratory operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the U.S. Department of Energy's NNSA under contract DE-AC04-94AL85000.

  20. n-Dopants Based on Dimers of Benzimidazoline Radicals: Structures and Mechanism of Redox Reactions.

    PubMed

    Zhang, Siyuan; Naab, Benjamin D; Jucov, Evgheni V; Parkin, Sean; Evans, Eric G B; Millhauser, Glenn L; Timofeeva, Tatiana V; Risko, Chad; Brédas, Jean-Luc; Bao, Zhenan; Barlow, Stephen; Marder, Seth R

    2015-07-20

    Dimers of 2-substituted N,N'-dimethylbenzimidazoline radicals, (2-Y-DMBI)2 (Y=cyclohexyl (Cyc), ferrocenyl (Fc), ruthenocenyl (Rc)), have recently been reported as n-dopants for organic semiconductors. Here their structural and energetic characteristics are reported, along with the mechanisms by which they react with acceptors, A (PCBM, TIPS-pentacene), in solution. X-ray data and DFT calculations both indicate a longer C-C bond for (2-Cyc-DMBI)2 than (2-Fc-DMBI)2 , yet DFT and ESR data show that the latter dissociates more readily due to stabilization of the radical by Fc. Depending on the energetics of dimer (D2 ) dissociation and of D2 -to-A electron transfer, D2 reacts with A to form D(+) and A(-) by either of two mechanisms, differing in whether the first step is endergonic dissociation or endergonic electron transfer. However, the D(+) /0.5 D2 redox potentials-the effective reducing strengths of the dimers-vary little within the series (ca. -1.9 V vs. FeCp2 (+/0) ) (Cp=cyclopentadienyl) due to cancelation of trends in the D(+/0) potential and D2 dissociation energy. The implications of these findings for use of these dimers as n-dopants, and for future dopant design, are discussed.

  1. Enhanced dopant solubility and visible-light absorption in Cr-N co-doped TiO2 nanoclusters

    SciTech Connect

    Chiodi, Dr Mirco; Cheney, Christine; Vilmercati, Paolo; Cavaliere, Emanuele; Mannella, Norman; Gavioli, Luca; Weitering, Harm H

    2012-01-01

    A major obstacle toward employing TiO2 as an efficient photoactive material is related to its large optical band gap, strongly limiting visible light absorption. Substitutional doping with both donors and acceptors (co-doping) potentially leads to a significant band gap reduction, but the effectiveness of the co-doping approach remains limited by the low solubility of dopants inside TiO2. Here we show that nanostructured Cr and N co-doped TiO2 thin films can be obtained by Supersonic Cluster Beam Deposition (SCBD) with a high concentration of dopants and a strongly reduced band gap. Complementary spectroscopic investigations show that doping effectively occurs into substitutional lattice sites, inducing dopant levels in the gap that are remarkably delocalized. The high surface-to-volume ratio, typical of SCBD nanostructured films, likely facilitates the dopant incorporation. The present results indicate that SCBD films are highly promising photoactive nanophase materials.

  2. Coupling of erbium dopants to yttrium orthosilicate photonic crystal cavities for on-chip optical quantum memories

    SciTech Connect

    Miyazono, Evan; Zhong, Tian; Craiciu, Ioana; Kindem, Jonathan M.; Faraon, Andrei

    2016-01-04

    Erbium dopants in crystals exhibit highly coherent optical transitions well suited for solid-state optical quantum memories operating in the telecom band. Here, we demonstrate coupling of erbium dopant ions in yttrium orthosilicate to a photonic crystal cavity fabricated directly in the host crystal using focused ion beam milling. The coupling leads to reduction of the photoluminescence lifetime and enhancement of the optical depth in microns-long devices, which will enable on-chip quantum memories.

  3. Imaging Dirac-Mass Disorder from Magnetic Dopant-Atoms in the Ferromagnetic Topological Insulator Crx(Bi0.1Sb0.9)2-x Te3 - Part I

    NASA Astrophysics Data System (ADS)

    Kim, Chung Koo; Lee, Inhee; Lee, Jinho; Billinge, Simon; Zhong, Ruidan; Schneeloch, John; Liu, Tiansheng; Tranquada, John; Gu, Genda; Davis, J. C. Seamus

    2015-03-01

    Topological insulators (TI) have a gapless surface state of Dirac fermions protected by the time reversal symmetry (TRS). However, TRS can be broken in the ferromagnetic state induced by magnetic doping. This leads to the opening of ``mass gap'' at the Dirac point. Such a gap is predicted to involve many exotic phenomena for which understanding the microscopic role of magnetic dopants is critical. But it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr0.08(Bi0.1Sb0.9)1.92 Te3. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate directly is related to fluctuations in n(r), the areal Cr atom density at the surface. The relationship of the surface-state Fermi wavevectors to both the correlation length and anisotropic structure of Δ(r) are found consistent with predictions for ferromagnetism mediated by the surface states.

  4. Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules.

    PubMed

    Salzmann, Ingo; Heimel, Georg; Oehzelt, Martin; Winkler, Stefanie; Koch, Norbert

    2016-03-15

    Today's information society depends on our ability to controllably dope inorganic semiconductors, such as silicon, thereby tuning their electrical properties to application-specific demands. For optoelectronic devices, organic semiconductors, that is, conjugated polymers and molecules, have emerged as superior alternative owing to the ease of tuning their optical gap through chemical variability and their potential for low-cost, large-area processing on flexible substrates. There, the potential of molecular electrical doping for improving the performance of, for example, organic light-emitting devices or organic solar cells has only recently been established. The doping efficiency, however, remains conspicuously low, highlighting the fact that the underlying mechanisms of molecular doping in organic semiconductors are only little understood compared with their inorganic counterparts. Here, we review the broad range of phenomena observed upon molecularly doping organic semiconductors and identify two distinctly different scenarios: the pairwise formation of both organic semiconductor and dopant ions on one hand and the emergence of ground state charge transfer complexes between organic semiconductor and dopant through supramolecular hybridization of their respective frontier molecular orbitals on the other hand. Evidence for the occurrence of these two scenarios is subsequently discussed on the basis of the characteristic and strikingly different signatures of the individual species involved in the respective doping processes in a variety of spectroscopic techniques. The critical importance of a statistical view of doping, rather than a bimolecular picture, is then highlighted by employing numerical simulations, which reveal one of the main differences between inorganic and organic semiconductors to be their respective density of electronic states and the doping induced changes thereof. Engineering the density of states of doped organic semiconductors, the Fermi

  5. Dopants diffusion in a thin film SIMOX structure and its computer simulation

    NASA Astrophysics Data System (ADS)

    Zuoyu, Shi; Chenglu, Lin; Wenhua, Zhu; Shichang, Zou; Hemment, P. L. F.

    1994-02-01

    Oxygen ions with energy 90 or 200 keV and doses of 1.2 or 1.8×10 18 O +/cm 2 respectively were implanted into p-type (100) single crystal wafers followed by annealing at 1300°C for 5 h in a nitrogen environment to form a SIMOX (Separation by IMplanted OXygen) structure. During implantation the substrates were heated and the temperature was maintained at 650°C. 50 and 100 keV As + ions with doses ranging from 10 14 to 10 16/cm 2 were implanted into the SIMOX substrates. After implantation the samples were annealed at 900°C for 30 min or at 1100 or 1200°C for 15 or 20 s. Secondary ion mass spectroscopy (SIMS), Rutherford backscattering and channeling (RBS/C), automatic spreading resistance (ASR), and stripping Hall measurement were used to characterize the electrical properties of the SIMOX samples and the diffusion behavior of the arsenic atoms during the anneal. A computer program simulating dopant diffusion in SIMOX (SODDIS) was implemented, this being based upon the well-known SUPREM III program. Computer simulation and experiment showed (i) the buried SiO 2 layer in SIMOX acts as a very good barrier to dopant diffusion, (ii) the diffusion of arsenic in SIMOX is more rapid than in bulk silicon, and (iii) the electrical activity of the dopant in thin film SIMOX samples is dependent upon the implantation and anneal conditions, and also upon the defects present in the SIMOX material.

  6. Ab initio modeling of vacancies, antisites, and Si dopants in ordered InGaAs

    NASA Astrophysics Data System (ADS)

    Wang, Jingyang; Lukose, Binit; Thompson, Michael O.; Clancy, Paulette

    2017-01-01

    In0.53Ga0.47As, a III-V compound semiconductor with high electron mobility, is expected to bring better performance than silicon in next-generation n-type MOSFET devices. However, one major challenge to its wide scale adoption is the difficulty of obtaining high enough dopant activation. For Si-doped InGaAs, the best current experimental result, involving 10 min of furnace annealing at temperatures above 700 °C, yields a free electron concentration of 1.4 ×1019 cm-3, a value that still falls short of requirement for practical applications. In this paper, we investigate the origin of low dopant activation in InGaAs by calculating formation energies for a wide variety of single point defects (Si substutionals, Si tetrahedral interstitials, vacancies, and antisites) in Si-doped In0.5Ga0.5As in a CuAu-I type crystal structure. We find that (1) a high electron concentration can only be achieved under In/Ga-poor growth conditions, while As-poor conditions inhibit n-type doping; and (2) in heavily n-doped samples, cation vacancies VIn/Ga-3 contribute the most to the compensation of excess Si donors via the Si III - VIII mechanism (III = In/Ga), thus becoming the limiting factor to higher dopant activation. Under the most favorable growth conditions for n-doping, we find the maximum carrier concentration to be 5.2 ×1018 cm-3 under thermal equilibrium, within an order of magnitude of the best experimental value.

  7. Impact of Random Dopant Fluctuation on Size-Dependence of Contact Resistance

    NASA Astrophysics Data System (ADS)

    Matsuzawa, Kazuya

    2011-12-01

    Reducing the size of semiconductor devices causes contact in deca-nano size. Substantial fluctuation of contact resistance is anticipated owing to the reduction of impurity atoms in the contact holes. In this study, the impact of the random dopant fluctuation on the contact resistance is revealed by three-dimensional device simulation with a Schottky contact model. The standard deviation of the contact resistance could become 50%, dominated by the number of impurity atoms in the depletion layer formed by the Schottky barrier. The average value of the contact resistance could increase as the impurity concentration decreases because of the reduction of the tunneling path.

  8. Enhancing ionic conductivity of bulk single-crystal yttria-stabilized zirconia by tailoring dopant distribution

    SciTech Connect

    Lee, E.; Prinz, F. B.; Cai, W.

    2011-02-11

    We present an ab initio–based kinetic Monte Carlo model for ionic conductivity in single-crystal yttria-stabilized zirconia. Ionic interactions are taken into account by combining density functional theory calculations and the cluster expansion method and are found to be essential in reproducing the effective activation energy observed in experiments. The model predicts that the effective energy barrier can be reduced by 0.15–0.25 eV by arranging the dopant ions into a superlattice.

  9. Semiconductor material and method for enhancing solubility of a dopant therein

    DOEpatents

    Sadigh, Babak; Lenosky, Thomas J.; Rubia, Tomas Diaz; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

    2003-09-09

    A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

  10. Extending the Lifetime of Perovskite Solar Cells using a Perfluorinated Dopant.

    PubMed

    Salado, Manuel; Ramos, F Javier; Manzanares, Valentin M; Gao, Peng; Nazeeruddin, Mohammad Khaja; Dyson, Paul J; Ahmad, Shahzada

    2016-09-22

    The principle limitation of perovskite solar cells is related to their instability and, hence, their limited lifetime. Herein, we employ an imidazolium iodide dopant, 1-methyl-3-(1H,1H,2H,2H-nonafluorohexyl)-imidazolium iodide, containing a perfluorous appendage, which leads to prolonged (unencapsulated, under Ar atmosphere) device activities exceeding 100 days without compromising the power conversion efficiency and other photovoltaic parameters. The extended lifetime of the device can be attributed, at least in part, to the hydrophobic nature of the imidazolium iodide salt. The functionalization of the perovskite material was found to have negligible influence on the perovskite crystal structure.

  11. A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein

    DOEpatents

    Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

    2005-03-29

    A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

  12. Incorporation of the dopants Si and Be into GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Hilse, M.; Ramsteiner, M.; Breuer, S.; Geelhaar, L.; Riechert, H.

    2010-05-01

    We studied the doping with Si and Be of GaAs nanowires (NWRs) grown by molecular beam epitaxy. Regarding the NW morphology, no influence was observed for Si doping but high Be doping concentrations cause a kinking and tapering of the NWRs. We investigated local vibrational modes by means of resonant Raman scattering to determine the incorporation sites of the dopant atoms. For Si doping, both donors on Ga sites and acceptors on As sites have been observed. Be was found to be incorporated as an acceptor on Ga sites. However, at high doping concentration, Be is also incorporated on interstitial sites.

  13. Characterisation of active dopants in boron-doped self-assembled silicon nanostructures

    NASA Astrophysics Data System (ADS)

    Puthen Veettil, Binesh; Zhang, Tian; Chin, Robert Lee; Jia, Xuguang; Nomoto, Keita; Yang, Terry Chien-Jen; Lin, Ziyun; Wu, Lingfeng; Rexiati, Reyifate; Gutsch, Sebastian; Conibeer, Gavin; Perez-Würfl, Ivan

    2016-10-01

    Doping of silicon nanocrystals has become an important topic due to its potential to enable the fabrication of environmentally friendly and cost-effective optoelectronic and photovoltaic devices. However, doping of silicon nanocrystals has been proven difficult and most of the structural and electronic properties are still not well understood. In this work, the intrinsic and boron-doped self-assembled silicon nanocrystals were prepared and mainly characterised by the transient current method to study the behaviour of charge carriers in these materials. Our experiments quantified the amount of electrically active boron dopants that contributed to charge transport. From this, the boron doping efficiency in the nanocrystal superlattice was estimated.

  14. Substrate heating and emitter dopant effects in laser-annealed solar cells

    NASA Astrophysics Data System (ADS)

    Young, R. T.; Wood, R. F.; Christie, W. H.; Jellison, G. E., Jr.

    1981-08-01

    Experimental evidence is presented to demonstrate that substrate heating during pulsed-laser annealing (PLA) of ion-implanted silicon can significantly improve the electrical properties of the laser-recrystallized region, due to regrowth velocity reduction. Use of the optimum PLA condition shows qualitative agreement with theoretical predictions in that (1) the open-circuit voltage and fill factor of ion-implanted, laser-annealed solar cells are improved by the increase of emitter dopant concentrations, while (2) the short-circuit current remains fairly constant.

  15. Substitutional Co dopant on the GaAs(110) surface: A first principles study

    NASA Astrophysics Data System (ADS)

    Fang, Zhou; Yi, Zhijun

    2016-12-01

    Using the first principles ground state method, the electronic properties of single Co dopant replacing one Ga atom on the GaAs(110) surface are studied. Our calculated local density of states (LDOS) at Co site presents several distinct peaks above the valence band maximum (VBM), and this agrees with recent experiments. Moreover, the calculated STM images at bias voltages of 2 eV and -2 eV also agree with experiments. We discussed the origin of Co impurity induced distinct peaks, which can be characterized with the hybridization between Co d orbitals and p-like orbitals of surface As and Ga atoms.

  16. Optimizing the Dopant and Carrier Concentration of Ca5Al2Sb6 for High Thermoelectric Efficiency

    PubMed Central

    Yan, Yuli; Zhang, Guangbiao; Wang, Chao; Peng, Chengxiao; Zhang, Peihong; Wang, Yuanxu; Ren, Wei

    2016-01-01

    The effects of doping on the transport properties of Ca5Al2Sb6 are investigated using first-principles electronic structure methods and Boltzmann transport theory. The calculated results show that a maximum ZT value of 1.45 is achieved with an optimum carrier concentration at 1000 K. However, experimental studies have shown that the maximum ZT value is no more than 1 at 1000 K. By comparing the calculated Seebeck coefficient with experimental values, we find that the low dopant solubility in this material is not conductive to achieve the optimum carrier concentration, leading a smaller experimental value of the maximum ZT. Interestingly, the calculated dopant formation energies suggest that optimum carrier concentrations can be achieved when the dopants and Sb atoms have similar electronic configurations. Therefore, it might be possible to achieve a maximum ZT value of 1.45 at 1000 K with suitable dopants. These results provide a valuable theoretical guidance for the synthesis of high-performance bulk thermoelectric materials through dopants optimization. PMID:27406178

  17. Role of magnetic dopants in the phase diagram of Sm 1111 pnictides: The case of Mn

    NASA Astrophysics Data System (ADS)

    Lamura, G.; Shiroka, T.; Bordignon, S.; Sanna, S.; Moroni, M.; De Renzi, R.; Carretta, P.; Biswas, P. K.; Caglieris, F.; Putti, M.; Wurmehl, S.; Singh, S. J.; Shimoyama, J.; Gastiasoro, M. N.; Andersen, B. M.

    2016-12-01

    The deliberate insertion of magnetic Mn dopants in the Fe sites of the optimally doped SmFeAsO0.88F0.12 iron-based superconductor can modify in a controlled way its electronic properties. The resulting phase diagram was investigated across a wide range of manganese contents (x ) by means of muon-spin spectroscopy (μ SR ), both in zero and in transverse fields, to probe the magnetic and the superconducting order, respectively. The pure superconducting phase (at x <0.03 ) is replaced by a crossover region at intermediate Mn values (0.03 ≤x <0.08 ), where superconductivity coexists with static magnetic order. After completely suppressing superconductivity for x =0.08 , a further increase in Mn content reinforces the natural tendency towards antiferromagnetic correlations among the magnetic Mn ions. The sharp drop of Tc and the induced magnetic order in the presence of magnetic disorder/dopants, such as Mn, are both consistent with a recent theoretical model of unconventional superconductors (M. N. Gastiasoro et al., Phys. Rev. Lett. 117, 257002 (2016), 10.1103/PhysRevLett.117.257002), which includes correlation-enhanced RKKY couplings between the impurity moments.

  18. Effect of Dopants on the Adsorption of Carbon Dioxide on Ceria Surfaces.

    PubMed

    Li, Meijun; Tumuluri, Uma; Wu, Zili; Dai, Sheng

    2015-11-01

    High-surface-area nanosized CeO2 and M-doped CeO2 (M=Cu, La, Zr, and Mg) prepared by a surfactant-templated method were tested for CO2 adsorption. Cu, La, and Zr are doped into the lattice of CeO2, whereas Mg is dispersed on the CeO2 surface. The doping of Cu and La into CeO2 leads to an increase of the CO2 adsorption capacity, whereas the doping of Zr has little or no effect. The addition of Mg causes a decrease of the CO2 adsorption capacity at a low Mg content and a gradual increase at a higher content. The CO2 adsorption capacity follows the sequence Cu-CeO2 >La-CeO2 >Zr-CeO2 ≈CeO2 >Mg-CeO2 at low dopant contents, in line with the relative amount of defect sites in the samples. It is the defect sites on the surface, not in the bulk of CeO2, modified by the dopants that play the vital role in CO2 chemisorption. The role of surface oxygen vacancies is further supported by an in situ IR spectroscopic study of the surface chemistry during CO2 adsorption on the doped CeO2.

  19. Multi-Excitonic Emission from Solitary Dopant States of Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Htoon, H.; Ma, X.; Hartmann, N. F.; Adamska, L.; Velizhanin, K. A.; Tretiak, S.; Baldwin, J. K. S.; Doorn, S. K.

    Oxygen doping of single wall carbon nanotubes (SWCNTs) has been rapidly emerging as an effective mean for introduction of new functionalities. Recently, through demonstration of fluctuation free, room temperature single photon generation, we established these states as a new type of solid-state two level atom with potentials in quantum information technologies. This study further showed that while some doped tubes were characterized with a near complete photon antibunching, significant numbers of doped tubes exhibit some degree of photon bunching indicating that they emit more than one photon in one excitation cycle. Here in this work, by separating slow and fast photons in the time domain, we show for the first time that the multiple photon emissions originated from higher order multi-exciton states of solitary dopants. We also show that such multi-exciton states can allow emission of photon pairs with efficiency as high as 20-30% of single exciton emission. With this work, we bring out multi-excitonic processes of the solitary dopant states as a new area to be explored for potential applications in lasing, entangled photon generation and carrier multiplication.

  20. Application of Lithium Chloride Dopant in Fabrication of CdTe Solar Cells

    NASA Astrophysics Data System (ADS)

    Xu, Hang; Zeng, Guanggen; Feng, Lianghuan; Wu, Lili; Liu, Cai; Ren, Shengqiang; Li, Kang; Li, Bing; Li, Wei; Wang, Wenwu; Zhang, Jingquan

    2017-02-01

    We report use of lithium chloride (LiCl) as a non-Cd dopant to deal with the environmental issues associated with use of traditional CdCl2 dopant in CdTe solar cells. It has been found that, after LiCl treatment, device performance parameters including external quantum efficiency and conversion efficiency were improved considerably, being comparable to those of a counterpart treated with CdCl2. The optimal efficiency of 9.58% was obtained at 405°C, and V oc as high as ˜737.3 mV was obtained at 385°C. Thorough study of the properties of the CdTe film treated by LiCl by x-ray diffraction analysis, scanning electron microscopy, x-ray photoelectron spectroscopy, and secondary-ion mass spectroscopy further verified the feasibility of posttreatment with nontoxic LiCl for fabrication of CdTe photovoltaic devices. The doping level of p-type CdTe thin film was improved by lithium. This represents a nontoxic approach for fabrication of commercial CdS/CdTe thin-film solar cells with better performance.

  1. Role of dopant counter-anion functionality in polyaniline salts/blends and implications to morphology

    SciTech Connect

    Hopkins, A.R.; Rasmussen, P.G.; Basheer, R.A.; Annis, B.K.; Wignall, G.D.

    1997-04-01

    Polyanilines are of particular current interest primarily due to their relative ease of synthesis, low cost and stable conductivity in air. The insulating, polyaniline emeraldine base (PANI-EB) form becomes electrically conducting by preferential protonation or doping the imine nitrogen sites to yield an electrically conducting polyaniline emeraldine salt (PANI-ES). In this paper, wide and small angle X-ray scattering techniques (i.e., WAXS and SAXS) and light microscopy are used to characterize the influence of the dopant`s structure on the morphology of both polyaniline salt and blend. In an attempt to modify the morphology of the PANI-ES, the authors have evaluated a number of doping acids (i.e., methane sulfonic acid (HMSA), butane sulfonic acid (HBSA), dodecyl benzene sulfonic acid (HDBSA) and camphor sulfonic acid (HCSA)) that vary in size and polarity to better understanding the role of the acid in PANI-ES`s morphology and the resulting electrical conductivity. The other goal was to investigate the effect of the counter-anion structure on the nature of the phase separated PANI-ES network. The shape of the PANI-ES network in the host polycaprolactam has important implications on the nature of conduction behavior and the final electrical conductivity of the blend.

  2. High-resolution patterning electronic polymers using dopant induced solubility control (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Moule, Adam J.; Jacobs, Ian E.; Li, Jun; Burg, Stephanie L.; Bilsky, David J.; Rotondo, Brandon T.; Stroeve, Pieter

    2015-08-01

    Organic electronics promise to provide flexible, large-area circuitry such as photovoltaics, displays, and light emitting diodes that can be fabricated inexpensively from solutions. A major obstacle to this vision is that most conjugated organic materials are miscible, making solution-based fabrication of multilayer or micro- to nanoscale patterned films problematic. Here we demonstrate that the solubility of prototypical conductive polymer poly(3-hexylthiophene) (P3HT) can be reversibly "switched off" using high electron affinity molecular dopants, then later recovered with light or a suitable dedoping solution. Using this technique, we are able to stack mutually soluble materials and laterally pattern polymer films using evaporation of dopants through a shadow mask or with light, achieving sub-micrometer, optically limited feature sizes. After forming these structures, the films can be dedoped without disrupting the patterned features; dedoped films have identical optical characteristics, charge carrier mobilities, and NMR spectra as as-cast P3HT films. This method greatly simplifies solution-based device fabrication, is easily adaptable to current manufacturing workflows, and is potentially generalizable to other classes of materials.

  3. Laser and voltage manipulation of bistable Si dopants in the GaAs (110) surface

    NASA Astrophysics Data System (ADS)

    Smakman, E. P.; van Bree, J.; Koenraad, P. M.

    2013-02-01

    Bistable behavior of single Si dopants in the (110) surface layer of GaAs was studied with a scanning tunneling microscope (STM). The Si atom acts as either a positively charged substitutional donor or a negatively charged interstitial. Its configuration can switch under the influence of a local biased STM tip. To independently manipulate the charge state, the sample was illuminated by a laser during STM operation. The Si atom can be reversibly switched between its positive and negative charge states by turning the laser on and off, respectively. This process occurs mostly with the photon energy tuned above the band gap of GaAs, indicating that photogenerated electron-hole pairs play an important role in the process. The occupation of the donor and interstitial configurations depends on the carrier dynamics, i.e., the possibility of the electrons to escape or to be captured. If the tip-induced band bending is large enough, it is possible for electrons to tunnel into the conduction band and the donor configuration is observed. Another escape path is created when the sample is illuminated and photogenerated holes can recombine with the bound electrons of the dopant.

  4. Dopant-specific unzipping of carbon nanotubes for intact crystalline graphene nanostructures

    NASA Astrophysics Data System (ADS)

    Lim, Joonwon; Narayan Maiti, Uday; Kim, Na-Young; Narayan, Rekha; Jun Lee, Won; Sung Choi, Dong; Oh, Youngtak; Min Lee, Ju; Yong Lee, Gil; Hun Kang, Seok; Kim, Hyunwoo; Kim, Yong-Hyun; Ouk Kim, Sang

    2016-01-01

    Atomic level engineering of graphene-based materials is in high demand to enable customize structures and properties for different applications. Unzipping of the graphene plane is a potential means to this end, but uncontrollable damage of the two-dimensional crystalline framework during harsh unzipping reaction has remained a key challenge. Here we present heteroatom dopant-specific unzipping of carbon nanotubes as a reliable and controllable route to customized intact crystalline graphene-based nanostructures. Substitutional pyridinic nitrogen dopant sites at carbon nanotubes can selectively initiate the unzipping of graphene side walls at a relatively low electrochemical potential (0.6 V). The resultant nanostructures consisting of unzipped graphene nanoribbons wrapping around carbon nanotube cores maintain the intact two-dimensional crystallinity with well-defined atomic configuration at the unzipped edges. Large surface area and robust electrical connectivity of the synergistic nanostructure demonstrate ultrahigh-power supercapacitor performance, which can serve for AC filtering with the record high rate capability of -85° of phase angle at 120 Hz.

  5. Theoretical investigation of single dopant in core/shell nanocrystal in magnetic field

    NASA Astrophysics Data System (ADS)

    Talbi, A.; Feddi, E.; Oukerroum, A.; Assaid, E.; Dujardin, F.; Addou, M.

    2015-09-01

    The control of single dopant or "solitary dopant" in semiconductors constitute a challenge to achieve new range of tunable optoelectronic devices. Knowing that the properties of doped monocrystals are very sensitive to different external perturbations, the aim of this study is to understand the effect of a magnetic field on the ground state energy of an off-center ionized donor in a core/shell quantum dot (CSQD). The binding energies with and without an applied magnetic field are determined by the Ritz variational method taking into account the electron-impurity correlation in the trial wave function deduced from the second-order perturbation. It has been found that the external magnetic field affects strongly the binding energy, and its effect varies as a function of the core radius and the shell thickness. We have shown the existence of a threshold ratio (a / b) crit which represents the limit between the tridimensional and the spherical surface confinement. In addition our analysis demonstrates the important influence of the position of ionized donor in the shell material.

  6. On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

    NASA Astrophysics Data System (ADS)

    Hao, Wu; Miao, Xu; Guangxing, Wan; Huilong, Zhu; Lichuan, Zhao; Xiaodong, Tong; Chao, Zhao; Dapeng, Chen; Tianchun, Ye

    2014-11-01

    The importance of substrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide (ES-UB-MOSFETs) is demonstrated by simulation. A new substrate/backgate doping engineering, lateral non-uniform dopant distributions (LNDD) is investigated in ES-UB-MOSFETs. The effects of LNDD on device performance, Vt-roll-off, channel mobility and random dopant fluctuation (RDF) are studied and optimized. Fixing the long channel threshold voltage (Vt) at 0.3 V, ES-UB-MOSFETs with lateral uniform doping in the substrate and forward back bias can scale only to 35 nm, meanwhile LNDD enables ES-UB-MOSFETs to scale to a 20 nm gate length, which is 43% smaller. The LNDD degradation is 10% of the carrier mobility both for nMOS and pMOS, but it is canceled out by a good short channel effect controlled by the LNDD. Fixing Vt at 0.3 V, in long channel devices, due to more channel doping concentration for the LNDD technique, the RDF in LNDD controlled ES-UB-MOSFETs is worse than in back-bias controlled ES-UB-MOSFETs, but in the short channel, the RDF for LNDD controlled ES-UB-MOSFET is better due to its self-adaption of substrate doping engineering by using a fixed thickness inner-spacer. A novel process flow to form LNDD is proposed and simulated.

  7. Exciton-to-Dopant Energy Transfer in Mn-Doped Cesium Lead Halide Perovskite Nanocrystals.

    PubMed

    Parobek, David; Roman, Benjamin J; Dong, Yitong; Jin, Ho; Lee, Elbert; Sheldon, Matthew; Son, Dong Hee

    2016-12-14

    We report the one-pot synthesis of colloidal Mn-doped cesium lead halide (CsPbX3) perovskite nanocrystals and efficient intraparticle energy transfer between the exciton and dopant ions resulting in intense sensitized Mn luminescence. Mn-doped CsPbCl3 and CsPb(Cl/Br)3 nanocrystals maintained the same lattice structure and crystallinity as their undoped counterparts with nearly identical lattice parameters at ∼0.2% doping concentrations and no signature of phase separation. The strong sensitized luminescence from d-d transition of Mn(2+) ions upon band-edge excitation of the CsPbX3 host is indicative of sufficiently strong exchange coupling between the charge carriers of the host and dopant d electrons mediating the energy transfer, essential for obtaining unique properties of magnetically doped quantum dots. Highly homogeneous spectral characteristics of Mn luminescence from an ensemble of Mn-doped CsPbX3 nanocrystals and well-defined electron paramagnetic resonance spectra of Mn(2+) in host CsPbX3 nanocrystal lattices suggest relatively uniform doping sites, likely from substitutional doping at Pb(2+). These observations indicate that CsPbX3 nanocrystals, possessing many superior optical and electronic characteristics, can be utilized as a new platform for magnetically doped quantum dots expanding the range of optical, electronic, and magnetic functionality.

  8. Mitigating valley-driven localization in atomically thin dopant chains in Si

    NASA Astrophysics Data System (ADS)

    Dusko, Amintor; Saraiva, A. L.; Koiller, Belita

    2016-09-01

    A theoretical study of the localization properties of nanowires of dopants in silicon (Si) fabricated by ionic implantation or scanning tunnel microscope lithography is presented for a model incorporating the currently unavoidable imprecision in individual donor positioning. Experiments have shown that Ohm's law holds in some cases, in apparent defiance to the Anderson localization theory in one dimension. We investigate how valley interference affects the traditional theory of electronic structure of disordered systems. Each isolated donor orbital is realistically described by multivalley effective-mass theory. We extend this model to describe chains of donors as a linear combination of dopant orbitals. Disorder in donor positioning is taken into account, leading to an intricate disorder distribution of hoppings between nearest-neighbor donor sites (donor-donor tunnel coupling)—an effect of valley interference. A decay length, related to the usual localization length, is obtained for phosphorous (P) donor chains from a transfer-matrix approach and is further compared with the chain length. We quantitatively determine the impact of uncertainties δ R in the implantation position relative to a target and also compare our results with those obtained without valley interference. We analyze systematically the aimed interdonor separation dependence (R0) and show that fairly diluted donor chains (R0=7.7 nm) may be as long as 100 nm before the effective onset of Anderson localization, as long as the positioning error is under a lattice parameter (δ R <0.543 nm).

  9. Interactions between Mn dopant and oxygen vacancy for insulation performance of BaTiO3

    NASA Astrophysics Data System (ADS)

    Chikada, Shunsuke; Kubota, Teppei; Honda, Atsushi; Higai, Shin'ichi; Motoyoshi, Yasuhiro; Wada, Nobuyuki; Shiratsuyu, Kosuke

    2016-10-01

    We performed first-principles calculations and electron spin resonance (ESR) measurements on Mn-doped perovskite BaTiO3 (BT) ceramics in order to investigate the interactions between Mn dopant and O vacancy (VO). We discovered the following two. First, VOs are stabilized at the nearest neighbor O site of Mn at a Ti site and this results in the suppression of VO diffusion. Second, electrons generated by the formation of VOs are trapped in unoccupied Mn-3d orbitals in the BT bandgap. This indicates that the valence state of Mn changes according to the VO density. We synthesized Mn-doped BT by varying the partial pressure of O2 gas and examined the Mn valence states with ESR measurements. We successfully observed that the majority type of Mn ions (2+, 3+, and 4+) depends on O2 gas pressure of the firing atmosphere. According to these theoretical and experimental investigations, we concluded that Mn dopants have two effects, i.e., VO and electron carrier trapping. Moreover, the mechanisms of Mn doping in BT improved the insulation resistance, and the reliability of BT-based ceramic capacitors/condensers were thoroughly examined.

  10. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

    NASA Astrophysics Data System (ADS)

    Nasir, M. F.; Zainol, M. N.; Hannas, M.; Mamat, M. H.; Rahman, S. A.; Rusop, Mohamad

    2016-07-01

    This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 103 Ωcm-1. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.

  11. Dopant-specific unzipping of carbon nanotubes for intact crystalline graphene nanostructures

    PubMed Central

    Lim, Joonwon; Narayan Maiti, Uday; Kim, Na-Young; Narayan, Rekha; Jun Lee, Won; Sung Choi, Dong; Oh, Youngtak; Min Lee, Ju; Yong Lee, Gil; Hun Kang, Seok; Kim, Hyunwoo; Kim, Yong-Hyun; Ouk Kim, Sang

    2016-01-01

    Atomic level engineering of graphene-based materials is in high demand to enable customize structures and properties for different applications. Unzipping of the graphene plane is a potential means to this end, but uncontrollable damage of the two-dimensional crystalline framework during harsh unzipping reaction has remained a key challenge. Here we present heteroatom dopant-specific unzipping of carbon nanotubes as a reliable and controllable route to customized intact crystalline graphene-based nanostructures. Substitutional pyridinic nitrogen dopant sites at carbon nanotubes can selectively initiate the unzipping of graphene side walls at a relatively low electrochemical potential (0.6 V). The resultant nanostructures consisting of unzipped graphene nanoribbons wrapping around carbon nanotube cores maintain the intact two-dimensional crystallinity with well-defined atomic configuration at the unzipped edges. Large surface area and robust electrical connectivity of the synergistic nanostructure demonstrate ultrahigh-power supercapacitor performance, which can serve for AC filtering with the record high rate capability of −85° of phase angle at 120 Hz. PMID:26796993

  12. Origin of electrolyte-dopant dependent sulfur poisoning of SOFC anodes.

    PubMed

    Zeng, ZhenHua; Björketun, Mårten E; Ebbesen, Sune; Mogensen, Mogens B; Rossmeisl, Jan

    2013-05-14

    The mechanisms governing the sulfur poisoning of the triple phase boundary (TPB) of Ni-XSZ (X2O3 stabilized zirconia) anodes have been investigated using density functional theory. The calculated sulfur adsorption energies reveal a clear correlation between the size of the cation dopant X(3+) and the sulfur tolerance of the Ni-XSZ anode; the smaller the ionic radius, the higher the sulfur tolerance. The mechanistic study shows that the size of X(3+) strongly influences XSZ's surface energy, which in turn determines the adhesion of Ni to XSZ. The Ni-XSZ interaction has a direct impact on the Ni-S interaction and on the relative stability of reconstructed and pristine Ni(100) facets at the TPB. Together, these two effects control the sulfur adsorption on the Ni atoms at the TPB. The established relationships explain experimentally observed dopant-dependent anode performances and provide a blueprint for the future search for and preparation of highly sulfur tolerant anodes.

  13. Effect of Dopants on the Adsorption of Carbon Dioxide on Ceria Surfaces

    DOE PAGES

    Li, Meijun; Tumuluri, Uma; Wu, Zili; ...

    2015-09-25

    Here, high-surface-area nanosized CeO2 and M-doped CeO2 (M=Cu, La, Zr, and Mg) prepared by a surfactant-templated method were tested for CO2 adsorption. Cu, La, and Zr are doped into the lattice of CeO2, whereas Mg is dispersed on the CeO2 surface. The doping of Cu and La into CeO2 leads to an increase of the CO2 adsorption capacity, whereas the doping of Zr has little or no effect. The addition of Mg causes a decrease of the CO2 adsorption capacity at a low Mg content and a gradual increase at a higher content. The CO2 adsorption capacity follows the sequencemore » Cu-CeO2>La-CeO2>Zr-CeO2≈CeO2>Mg-CeO2 at low dopant contents, in line with the relative amount of defect sites in the samples. It is the defect sites on the surface, not in the bulk of CeO2, modified by the dopants that play the vital role in CO2 chemisorption. Lastly, the role of surface oxygen vacancies is further supported by an in situ IR spectroscopic study of the surface chemistry during CO2 adsorption on the doped CeO2.« less

  14. Effects of dopants on the biomechanical properties of conducting polymer films on platinum electrodes.

    PubMed

    Baek, Sungchul; Green, Rylie A; Poole-Warren, Laura A

    2014-08-01

    Conducting polymers have often been described in literature as a coating for metal electrodes which will dampen the mechanical mismatch with neural tissue, encouraging intimate cell interactions. However, there is very limited quantitative analysis of conducting polymer mechanics and the relation to tissue interactions. This article systematically analyses the impact of coating platinum (Pt) electrodes with the conducting polymer poly(ethylene dioxythiophene) (PEDOT) doped with a series of common anions which have been explored for neural interfacing applications. Nanoindentation was used to determine the coating modulus and it was found that the polymer stiffness increased as the size of the dopant ion was increased, with PEDOT doped with polystyrene sulfonate (PSS) having the highest modulus at 3.2 GPa. This was more than double that of the ClO4 doped PEDOT at 1.3 GPa. Similarly, the electrical properties of these materials were shown to have a size dependent behavior with the smaller anions producing PEDOT films with the highest charge transfer capacity and lowest impedance. Coating stiffness was found to have a negligible effect on in vitro neural cell survival and differentiation, but rather polymer surface morphology, dopant toxicity and mobility is found to have the greatest impact.

  15. In Situ Measurement of Voltage-Induced Stress in Conducting Polymers with Redox-Active Dopants.

    PubMed

    Sen, Sujat; Kim, Sung Yeol; Palmore, Lia R; Jin, Shenghua; Jadhav, Nitin; Chason, Eric; Palmore, G Tayhas R

    2016-09-14

    Minimization of stress-induced mechanical rupture and delamination of conducting polymer (CP) films is desirable to prevent failure of devices based on these materials. Thus, precise in situ measurement of voltage-induced stress within these films should provide insight into the cause of these failure mechanisms. The evolution of stress in films of polypyrrole (pPy), doped with indigo carmine (IC), was measured in different electrochemical environments using the multibeam optical stress sensor (MOSS) technique. The stress in these films gradually increases to a constant value during voltage cycling, revealing an initial break-in period for CP films. The nature of the ions involved in charge compensation of pPy[IC] during voltage cycling was determined from electrochemical quartz crystal microbalance (EQCM) data. The magnitude of the voltage-induced stress within pPy[IC] at neutral pH correlated with the radius of the hydrated mobile ion in the order Li(+) > Na(+) > K(+). At acidic pH, the IC dopant in pPy[IC] undergoes reversible oxidation and reduction within the range of potentials investigated, providing a secondary contribution to the observed voltage-induced stress. We report on the novel stress response of these polymers due to the presence of pH-dependent redox-active dopants and how it can affect material performance.

  16. Effect of dopant ions on piezo-response of polyaniline-poly(vinylidine flouride) blends

    NASA Astrophysics Data System (ADS)

    Radhakrishnan, S.; Kar, Swarendu B.

    2002-11-01

    Electromechanical sensors and actuators are important for robotic and aerospace applications. Among various material, poly(vinylidene fluoride) ir its co-polymers are known to exhibit high piezosensitivity. However, due to their higher electrical resistivity the input impedance of subsequent signal processign circuits is required to be very high. A novel technique to decrease the impedance would be blending PVDF with conducting polyaniline (PANI) but without affecting the piezosensitivyt of PVDF. Polyaniline (PANI) was synthesized by well known standard chemical route using dopants HCl and dodecyl benzene sulfonic acid. These PANI powder were blended with PVDF which was first dissolved in DMAc at 50 degrees C to which were added requisite amounts of two types of PANI ranging from 2 to 25 wt percent, stirred for 24 hours to form a homogeneous mixture which was cast in glass petri-dish, followed by complete solvent evaporation at 50 degrees C and then drying under vacuum for 24 hours to give films of PANI-PVDF blends. The piezo-sensitivity of these blends was measured before and after poling in electrical field. The sensitivity factor was dependent on the composition, type of dopant as well as the electric polarization of the blend. The HCl doped PANI blends in PVDF were highly piezo-sensitive than other blend compositions. These various results have been explained on the basis of compatibility, discrete domain formation, nonlinear conduction process for charge transport, orientation of dipoles, and trapping of space charge at inter-domain sites.

  17. Effect of Gd dopant concentration on the defect engineering in ceria nanostructures

    SciTech Connect

    Sakar, M.; Rajkumar, Rubini; Tripathy, S.; Balakumar, S.

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ► Investigates the ionic conductivity of defect engineered Gd doped nano scale ceria. ► Reveals that there exists an optimum concentration of dopant to engineer ceria with large O{sub 2} vacancies. ► For the first time the Nanosponge morphology observed in the Gd doped nanoceria. ► It is observed that 5% of Gd in ceria is optimum to induce appropriate amount of defects. ► Thereby an enhanced ionic conductivity is achieved in 5% Gd doped ceria. -- Abstract: In this study, the fabrication and characterization of pure and gadolinium (Gd) doped ceria nanostructures (Ce{sub 1−x}Gd{sub x}O{sub 2−δ} where x = 0.05, 0.1 and 0.2) are investigated. The origin of defect formation has been systematically investigated by XRD and UV-Visible Raman. All the fabricated ceria are found to be “Nanosponge” morphology which is observed by using FESEM technique. The charge transfer of O{sup 2−} ions and Ce{sup 3+}/Ce{sup 4+} in the ceria host due to these defect structures are studied by UV–DRS. Impedance analysis is showed an enhanced ionic conductivity for 5% Gd doped ceria compared to other concentration of Gd, revealing that the dopant concentration is a critical parameter in engineering a large number of vacancy defects in ceria nanostructures.

  18. Locative Inversion in Cantonese.

    ERIC Educational Resources Information Center

    Mok, Sui-Sang

    This study investigates the phenomenon of "Locative Inversion" in Cantonese. The term "Locative Inversion" indicates that the locative phrase (LP) syntactic process in Cantonese and the appears at the sentence-initial position and its logical subject occurs postverbally. It is demonstrated that this Locative Inversion is a…

  19. Location, Location, Location: Development of Spatiotemporal Sequence Learning in Infancy

    ERIC Educational Resources Information Center

    Kirkham, Natasha Z.; Slemmer, Jonathan A.; Richardson, Daniel C.; Johnson, Scott P.

    2007-01-01

    We investigated infants' sensitivity to spatiotemporal structure. In Experiment 1, circles appeared in a statistically defined spatial pattern. At test 11-month-olds, but not 8-month-olds, looked longer at a novel spatial sequence. Experiment 2 presented different color/shape stimuli, but only the location sequence was violated during test;…

  20. Microscopic distribution of metal dopants and anion vacancies in Fe-doped BaTiO3-δ single crystals

    NASA Astrophysics Data System (ADS)

    Chakraborty, Tanushree; Meneghini, Carlo; Aquilanti, Giuliana; Ray, Sugata

    2013-06-01

    A detailed microscopic structural study on two single crystalline dilute magnetic oxides, BaTi0.95Fe0.05O3-δ with and without perceptible δ, has been carried out. Although it has been reported earlier that varying δ significantly affects high temperature ferromagnetism, the real distribution/redistribution of vacancies and dopant Fe ions inside the 6H hexagonal structure was never probed. This study reveals that oxygen vacancies reduce the dopant Fe3+ ions to Fe2+ and mostly accumulate around these Fe2+ ions. Another distinct trend is the tendency of the dopant Fe ions to get closer instead of being distributed randomly, thereby creating {{Fe}}_{2}^{2+}{{O}}_{9-{\\delta }^{\\prime}} like dimers within the 6H hexagonal unit cell. This experimental observation definitively confirms previous hypotheses based on theoretical models.

  1. Dopant effects on 2-ethyl-1-hexanol: A dual-channel impedance spectroscopy and neutron scattering study

    SciTech Connect

    Singh, Lokendra P.; Richert, Ranko; Raihane, Ahmed; Alba-Simionesco, Christiane

    2015-01-07

    A two-channel impedance technique has been used to study the relaxation behavior of 2-ethyl-1-hexanol with polar and non-polar dopants at the few percent concentration level over a wide temperature and frequency range. The non-polar dopants shift both the Debye and the primary structural relaxation time in the same direction, to shorter times for 3-methylpentane and to longer times for squalane, consistent with the relative glass transition temperatures (T{sub g}) of the components. By contrast, polar dopants such as water or methanol modify the α-process towards slower dynamics and increased amplitude, while the Debye process is accelerated and with a decreased amplitude. This effect of adding water to alcohol is explained by water promoting more compact structures with reduced Kirkwood correlation factors. This picture is consistent with a shift in the neutron scattering pre-peak to lower scattering vectors and with simulation work on alcohol-water systems.

  2. The effect of low levels of dopants upon the formation and properties of beta-phase molybdenum nitride

    SciTech Connect

    Cairns, A.G.; Gallagher, J.G.; Hargreaves, J.S.J.; Mckay, D.; Rico, J.L.; Wilson, K.

    2010-03-15

    The addition of 1 wt% Pd, Au, Ni and Cu dopants has been demonstrated to strongly alter the morphology of beta-phase molybdenum nitride prepared by treatment of MoO{sub 3} with a 3/1 H{sub 2}/N{sub 2} mixture at 750 deg. C. Furthermore, the addition of Pd significantly enhances the surface area and the formation of the nitride phase. It is proposed that the facile formation of molybdenum bronzes in this system is important in this respect. The dopants have also been observed to modify the denitridation characteristics of the beta-phase, with an overall reduction of the proportion of NH{sub 3} formed upon using a 3/1 H{sub 2}/Ar mixture with respect to the undoped sample. - Graphical abstract: Low levels of Pd, Au, Ni and Cu dopant have significant effects upon the morphology, formation and dentitridation characteristics of beta-phase molybdenum nitride.

  3. Significant improvement in dopant emission and lifetime in water soluble Cu:ZnSe/ZnS nanocrystals

    NASA Astrophysics Data System (ADS)

    Saikia, K.; Deb, P.; Mondal, B.; Kalita, E.

    2014-03-01

    We report here the enhanced dopant emission in Cu:ZnSe/ZnS core-shell nanocrystals (NCs) through an aqueous route in ambient conditions. A three-fold quantum enhancement in luminescence has been achieved by developing a ZnS inert shell as compared to the pristine doped NCs. The internal doping of Cu after shell growth, signifying localization of Cu2+ t2 energy states in the deep band gap, has shown a significant improvement in dopant excited state lifetime. The long lifetime related to Cu dopant emission is the longest lifetime ever reported for copper doped zinc based NCs developed through an aqueous route. The good colloidal as well as the luminescence stability of these highly efficient doped NCs mean they have great potential for use in biomedical imaging applications.

  4. Improving stability of photoluminescence of ZnSe thin films grown by molecular beam epitaxy by incorporating Cl dopant

    SciTech Connect

    Wang, J. S.; Shen, J. L.; Chen, W. J.; Tsai, Y. H.; Wang, H. H.; Yang, C. S.; Chen, R. H.; Tsai, C. D.

    2011-01-10

    This investigation studies the effect of chlorine (Cl) dopant in ZnSe thin films that were grown by molecular beam epitaxy on their photoluminescence (PL) and the stability thereof. Free excitonic emission was observed at room-temperature in the Cl-doped sample. Photon irradiation with a wavelength of 404 nm and a power density of 9.1 W/cm{sup 2} has a much stronger effect on PL degradation than does thermal heating to a temperature of 150 deg. C. Additionally, this study shows that the generation of nonradiative centers by both photon irradiation and thermal heating can be greatly inhibited by incorporating Cl dopant.

  5. The role of the domain size and titanium dopant in nanocrystalline hematite thin films for water photolysis

    NASA Astrophysics Data System (ADS)

    Yan, Danhua; Tao, Jing; Kisslinger, Kim; Cen, Jiajie; Wu, Qiyuan; Orlov, Alexander; Liu, Mingzhao

    2015-11-01

    Here we develop a novel technique for preparing high quality Ti-doped hematite thin films for photoelectrochemical (PEC) water splitting, through sputtering deposition of metallic iron films from an iron target embedded with titanium (dopants) pellets, followed by a thermal oxidation step that turns the metal films into doped hematite. It is found that the hematite domain size can be tuned from ~10 nm to over 100 nm by adjusting the sputtering atmosphere from more oxidative to mostly inert. The better crystallinity at a larger domain size ensures excellent PEC water splitting performance, leading to record high photocurrent from pure planar hematite thin films on FTO substrates. Titanium doping further enhances the PEC performance of hematite photoanodes. The photocurrent is improved by 50%, with a titanium dopant concentration as low as 0.5 atom%. It is also found that the role of the titanium dopant in improving the PEC performance is not apparently related to the films' electrical conductivity which had been widely believed, but is more likely due to the passivation of surface defects by the titanium dopants.Here we develop a novel technique for preparing high quality Ti-doped hematite thin films for photoelectrochemical (PEC) water splitting, through sputtering deposition of metallic iron films from an iron target embedded with titanium (dopants) pellets, followed by a thermal oxidation step that turns the metal films into doped hematite. It is found that the hematite domain size can be tuned from ~10 nm to over 100 nm by adjusting the sputtering atmosphere from more oxidative to mostly inert. The better crystallinity at a larger domain size ensures excellent PEC water splitting performance, leading to record high photocurrent from pure planar hematite thin films on FTO substrates. Titanium doping further enhances the PEC performance of hematite photoanodes. The photocurrent is improved by 50%, with a titanium dopant concentration as low as 0.5 atom%. It is

  6. Double-hole-mediated coupling of dopants and its impact on band gap engineering in TiO2.

    PubMed

    Yin, Wan-Jian; Wei, Su-Huai; Al-Jassim, Mowafak M; Yan, Yanfa

    2011-02-11

    A double-hole-mediated coupling of dopants is unraveled and confirmed in TiO2 by density-functional theory calculations. We find that when a dopant complex on neighboring oxygen sites in TiO2 has net two holes, the holes will strongly couple to each other through significant lattice relaxation. The coupling results in the formation of fully filled impurity bands lying above the valence band of TiO2, leading to a much more effective band gap reduction than that induced by monodoping or conventional donor-acceptor codoping. Our results suggest a new path for semiconductor band gap engineering.

  7. Dopant mapping of Be δ-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Ebert, Ph.; Landrock, S.; Chiu, Y. P.; Breuer, U.; Dunin-Borkowski, R. E.

    2012-11-01

    The effect of counterdoping on the Be dopant distribution in delta (δ)-doped layers embedded in Si-doped and intrinsic GaAs is investigated by cross-sectional scanning tunneling microscopy. δ-doped layers in intrinsic GaAs exhibit a large spreading, whereas those surrounded by Si-doped GaAs remain spatially localized. The different spreading is explained by the Fermi-level pinning at the growth surface, which leads to an increased Ga vacancies concentration with increasing Si counterdoping. The Ga vacancies act as sinks for the diffusing Be dopant atoms, hence retarding the spreading.

  8. Effect of solvent and dopant on poly(3,4-ethylenedioxythiophene) thin films by atomic force microscope lithography.

    PubMed

    Kim, Yong-il; Kim, Hyunsook; Lee, Haiwon

    2008-09-01

    AMF anodization lithography was performed on organic thin films with conducting polymers which is poly(3,4-ethylenedioxythiophene). The conductivity of PEDOT thin films was changed by different dopants and organic solvents. Two different dopants are poly(4-styrenesulfonate) and di(2-ethylhexyl)-sulfosuccinate. Also, DMF and IPA were used to prepare the PEDOT thin films doped with PSS and DEHS on silicon surface. The conductivities of these PEDOT variants were compared by obtaining their I-V curves between tip and thin films using AFM. Silicon oxide nanopatterns with higher aspect ratios can be obtained from the films with higher conductivity.

  9. Gradient-index POF without dopants: how the optical properties can be controlled by sole temperature treatment

    NASA Astrophysics Data System (ADS)

    Bunge, C.-A.; Schüppert, M.; Beckers, M.; Stepniak, G.; Vad, T.; Seide, G.; Gries, T.

    2016-09-01

    In this paper we present a novel melt-spinning fabrication process for graded-index polymer optical fibers that completely avoids additional dopants for the formation of the refractive-index profile. In the presented process the meltspun fiber is rapidly cooled down so that the inner and outer parts of the fiber solidify at different speeds resulting in a density gradient. This density variation leads to a refractive-index profile without any further dopants. We present achieved results for fibers made of PMMA, and also first preliminary results for bio polymers such as TPU.

  10. Current-voltage spectroscopy of dopant-induced quantum-dots in heavily n-doped junctionless nanowire transistors

    SciTech Connect

    Wang, Hao; Han, Weihua Ma, Liuhong; Li, Xiaoming; Hong, Wenting; Yang, Fuhua

    2014-03-31

    We demonstrate current-voltage spectroscopy of dopant-induced quantum dots in heavily n-doped junctionless nanowire transistors (JNTs) at low temperatures. The similar multiple-split current peak features for both single-channel and multiple-channel JNTs are found at the initial stage of conduction below the temperature of 75 K. The temperature stability of the pinch-off voltage, affected by activated electrons from defects and donor ionization, has been effectively improved by the 20 nm-width nanowires. The transition temperature for single electron tunneling to thermal activated transport is dependent on the ionization energy of dopants.

  11. High efficient white organic light-emitting diodes with single emissive layer using phosphorescent red, green, and blue dopants

    NASA Astrophysics Data System (ADS)

    Kim, You-Hyun; Wai Cheah, Kok; Young Kim, Woo

    2013-07-01

    Phosphorescent white organic light-emitting diodes (PHWOLEDs) with single emissive layer were fabricated by co-doping phosphorescent blue, green, and red emitters with different concentrations. WOLEDs using Ir(piq)3 and Ir(ppy)3 as red and green dopants along with 8% of Firpic as blue dopant with host materials of 4CzPBP in the emissive layer were compared under various doping ratio between Ir(piq)3 and Ir(ppy)3. Triplet-triplet Dexter energy transfer in single emissive PHWOLEDs including three primary colors was saturated from higher triplet energy levels to lower triplet energy levels directly.

  12. Sleeping at work: not all about location, location, location.

    PubMed

    Jay, Sarah M; Aisbett, Brad; Sprajcer, Madeline; Ferguson, Sally A

    2015-02-01

    Working arrangements in industries that use non-standard hours sometimes necessitate an 'onsite' workforce where workers sleep in accommodation within or adjacent to the workplace. Of particular relevance to these workers is the widely held (and largely anecdotal) assumption that sleep at home is better than sleep away, particularly when away for work. This narrative review explores the idea that sleep outcomes in these unique work situations are the product of an interaction between numerous factors including timing and duration of breaks, commute length, sleeping environment (noise, movement, vibration, light), circadian phase, demographic factors and familiarity with the sleep location. Based on the data presented in this review, it is our contention that the location of sleep, whilst important, is secondary to other factors such as the timing and duration of sleep periods. We suggest that future research should include measures that allow conceptualisation of other critical factors such as familiarity with the sleeping environment.

  13. Atomic scale models of Ion implantation and dopant diffusion in silicon

    SciTech Connect

    Caturla, M; Johnson, M; Lenosky, T; Sadigh, B; Theiss, S K; Zhu, J; de la Rubia, T D

    1999-03-01

    We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.

  14. Systematic Conversion of Single Walled Carbon Nanotubes into n-type Thermoelectric Materials by Molecular Dopants

    PubMed Central

    Nonoguchi, Yoshiyuki; Ohashi, Kenji; Kanazawa, Rui; Ashiba, Koji; Hata, Kenji; Nakagawa, Tetsuya; Adachi, Chihaya; Tanase, Tomoaki; Kawai, Tsuyoshi

    2013-01-01

    Thermoelectrics is a challenging issue for modern and future energy conversion and recovery technology. Carbon nanotubes are promising active thermoelectic materials owing to their narrow bandgap energy and high charge carrier mobility, and they can be integrated into flexible thermoelectrics that can recover any waste heat. We here report air-stable n-type single walled carbon nanotubes with a variety of weak electron donors in the range of HOMO level between ca. −4.4 eV and ca. −5.6 eV, in which partial uphill electron injection from the dopant to the conduction band of single walled carbon nanotubes is dominant. We display flexible films of the doped single walled carbon nanotubes possessing significantly large thermoelectric effect, which is applicable to flexible ambient thermoelectric modules. PMID:24276090

  15. Systematic Conversion of Single Walled Carbon Nanotubes into n-type Thermoelectric Materials by Molecular Dopants

    NASA Astrophysics Data System (ADS)

    Nonoguchi, Yoshiyuki; Ohashi, Kenji; Kanazawa, Rui; Ashiba, Koji; Hata, Kenji; Nakagawa, Tetsuya; Adachi, Chihaya; Tanase, Tomoaki; Kawai, Tsuyoshi

    2013-11-01

    Thermoelectrics is a challenging issue for modern and future energy conversion and recovery technology. Carbon nanotubes are promising active thermoelectic materials owing to their narrow bandgap energy and high charge carrier mobility, and they can be integrated into flexible thermoelectrics that can recover any waste heat. We here report air-stable n-type single walled carbon nanotubes with a variety of weak electron donors in the range of HOMO level between ca. -4.4 eV and ca. -5.6 eV, in which partial uphill electron injection from the dopant to the conduction band of single walled carbon nanotubes is dominant. We display flexible films of the doped single walled carbon nanotubes possessing significantly large thermoelectric effect, which is applicable to flexible ambient thermoelectric modules.

  16. Ionized dopant concentrations at the heavily doped surface of a silicon solar cell

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Broder, J. D.; Mazaris, G. A., Jr.; Hsu, L.

    1978-01-01

    Data are combined with concentrations obtained by a bulk measurement method using successive layer removal with measurements of Hall effect and resistivity. From the MOS (metal-oxide-semiconductor) measurements it is found that the ionized dopant concentration N has the value (1.4 + or - 0.1) x 10 to the 20th power/cu cm at distances between 100 and 220 nm from the n(+) surface. The bulk measurement technique yields average values of N over layers whose thickness is 2000 nm. Results show that, at the higher concentrations encountered at the n(+) surface, the MOS C-V technique, when combined with a bulk measurement method, can be used to evaluate the effects of materials preparation methodologies on the surface and near surface concentrations of silicon cells.

  17. Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

    NASA Astrophysics Data System (ADS)

    Wang, Hao; Han, Wei-Hua; Zhao, Xiao-Song; Zhang, Wang; Lyu, Qi-Feng; Ma, Liu-Hong; Yang, Fu-Hua

    2016-10-01

    We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the temperature-dependent conductance demonstrates the transport behaviors of variable-range hopping (below 30 K) and nearest-neighbor hopping (above 30 K). The activation energy for the charge delocalization gradually decreases due to the confinement potential of the conduction channel decreasing from the threshold voltage to the flatband voltage. With the increase of the source-drain bias, the activation energy increases in a temperature range from 30 K to 100 K at a fixed gate voltage, but decreases above the temperature of 100 K. Project supported partly by the National Key R & D Program of China (Grant No. 2016YFA02005003) and the National Natural Science Foundation of China (Grant Nos. 61376096 and 61327813).

  18. Quantum-chemical modeling of boron and noble gas dopants in silicon

    NASA Technical Reports Server (NTRS)

    Aronowitz, S.

    1983-01-01

    The electron effects of the presence of boron and noble gas dopants in a model silicon lattice were investigated using a self-consistent charge extended Hueckel program. The extent of electronic interaction of the noble gas with the lattice is given by: Kr greater than Ar greater than Ne. Theoretically, boron diffusion in the presence of neon, argon or krypton was examined using a self-consistent charge extended Hueckel program. The net energy of interaction between boron and neon is strongly repulsive while argon-boron exhibits a region of relative stability; krypton exhibits behavior similar to argon though no region of stability was found for the range of separations used in the calculations. Finally, it is noted, from the relative energy of the topmost filled molecular orbital associated with boron (in an interstitial position), that activation of the boron does not require boron movement but can be accomplished by indirect transitions.

  19. Contributed Review: A review of the investigation of rare-earth dopant profiles in optical fibers

    NASA Astrophysics Data System (ADS)

    Sidiroglou, F.; Roberts, A.; Baxter, G.

    2016-04-01

    Rare-earth doped optical fibers have captivated the interest of many researchers around the world across the past three decades. The growth of this research field has been stimulated primarily through their application in optical communications as fiber lasers and amplifiers, although rare-earth doped optical fiber based devices are now finding important uses in many other scientific and industrial areas (for example, medicine, sensing, the military, and material processing). Such wide commercial interest has provided a strong incentive for innovative fiber designs, alternative glass compositions, and novel fabrication processes. A prerequisite for the ongoing progress of this research field is developing the capacity to provide high resolution information about the rare-earth dopant distribution profiles within the optical fibers. This paper constitutes a comprehensive review of the imaging techniques that have been utilized in the analysis of the distribution of the rare-earth ion erbium within the core of optical fibers.

  20. Modeling and de-embedding the interferometric scanning microwave microscopy by means of dopant profile calibration

    SciTech Connect

    Michalas, L. Marcelli, R.; Wang, F.; Brillard, C.; Theron, D.

    2015-11-30

    This paper presents the full modeling and a methodology for de-embedding the interferometric scanning microwave microscopy measurements by means of dopant profile calibration. A Si calibration sample with different boron-doping level areas is used to that end. The analysis of the experimentally obtained S{sub 11} amplitudes based on the proposed model confirms the validity of the methodology. As a specific finding, changes in the tip radius between new and used tips have been clearly identified, leading to values for the effective tip radius in the range of 45 nm to 85 nm, respectively. Experimental results are also discussed in terms of the effective area concept, taking into consideration details related to the nature of tip-to-sample interaction.

  1. Effect of dopant concentration on photoluminescence properties of Gd2O3:Eu3+

    NASA Astrophysics Data System (ADS)

    Selvalakshmi, T.; Bose, A. Chandra

    2013-02-01

    Red-emitting Gd2-xO3:Eux3+(x = 2,4,6at%) was synthesized by sol-gel method and its optical properties were studied. The formation of Gd2O3 and the presence of metal oxygen bond were confirmed from X-ray diffraction (XRD) and fourier transform infrared (FTIR) spectroscopy studies. Incorporation of Eu3+ in Gd3+ site was proved qualitatively by Energy dispersive X-ray analysis (EDX). A strong charge transfer band (CTB) at 254 nm was observed in the excitation spectra with varying intensity for different dopant concentrations. Photoluminescence (PL) spectra reported red emission peak at 611 nm corresponding to 5D0-7F2 transition between Eu3+ energy levels. Concentration quenching occurred at 2 at % and its critical distance was calculated. Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) studies was carried out to study the morphological variations.

  2. Restoring the lattice of Si-based atom probe reconstructions for enhanced information on dopant positioning.

    PubMed

    Breen, Andrew J; Moody, Michael P; Ceguerra, Anna V; Gault, Baptiste; Araullo-Peters, Vicente J; Ringer, Simon P

    2015-12-01

    The following manuscript presents a novel approach for creating lattice based models of Sb-doped Si directly from atom probe reconstructions for the purposes of improving information on dopant positioning and directly informing quantum mechanics based materials modeling approaches. Sophisticated crystallographic analysis techniques are used to detect latent crystal structure within the atom probe reconstructions with unprecedented accuracy. A distortion correction algorithm is then developed to precisely calibrate the detected crystal structure to the theoretically known diamond cubic lattice. The reconstructed atoms are then positioned on their most likely lattice positions. Simulations are then used to determine the accuracy of such an approach and show that improvements to short-range order measurements are possible for noise levels and detector efficiencies comparable with experimentally collected atom probe data.

  3. Dual nature of magnetic dopants and competing trends in topological insulators.

    PubMed

    Sessi, Paolo; Biswas, Rudro R; Bathon, Thomas; Storz, Oliver; Wilfert, Stefan; Barla, Alessandro; Kokh, Konstantin A; Tereshchenko, Oleg E; Fauth, Kai; Bode, Matthias; Balatsky, Alexander V

    2016-06-27

    Topological insulators interacting with magnetic impurities have been reported to host several unconventional effects. These phenomena are described within the framework of gapping Dirac quasiparticles due to broken time-reversal symmetry. However, the overwhelming majority of studies demonstrate the presence of a finite density of states near the Dirac point even once topological insulators become magnetic. Here, we map the response of topological states to magnetic impurities at the atomic scale. We demonstrate that magnetic order and gapless states can coexist. We show how this is the result of the delicate balance between two opposite trends, that is, gap opening and emergence of a Dirac node impurity band, both induced by the magnetic dopants. Our results evidence a more intricate and rich scenario with respect to the once generally assumed, showing how different electronic and magnetic states may be generated and controlled in this fascinating class of materials.

  4. Dual nature of magnetic dopants and competing trends in topological insulators

    PubMed Central

    Sessi, Paolo; Biswas, Rudro R.; Bathon, Thomas; Storz, Oliver; Wilfert, Stefan; Barla, Alessandro; Kokh, Konstantin A.; Tereshchenko, Oleg E.; Fauth, Kai; Bode, Matthias; Balatsky, Alexander V.

    2016-01-01

    Topological insulators interacting with magnetic impurities have been reported to host several unconventional effects. These phenomena are described within the framework of gapping Dirac quasiparticles due to broken time-reversal symmetry. However, the overwhelming majority of studies demonstrate the presence of a finite density of states near the Dirac point even once topological insulators become magnetic. Here, we map the response of topological states to magnetic impurities at the atomic scale. We demonstrate that magnetic order and gapless states can coexist. We show how this is the result of the delicate balance between two opposite trends, that is, gap opening and emergence of a Dirac node impurity band, both induced by the magnetic dopants. Our results evidence a more intricate and rich scenario with respect to the once generally assumed, showing how different electronic and magnetic states may be generated and controlled in this fascinating class of materials. PMID:27345240

  5. Doping Versatile n-Type Organic Semiconductors via Room Temperature Solution-Processable Anionic Dopants.

    PubMed

    Chueh, Chu-Chen; Li, Chang-Zhi; Ding, Feizhi; Li, Zhong'an; Cernetic, Nathan; Li, Xiaosong; Jen, Alex K-Y

    2017-01-11

    In this study, we describe a facile solution-processing method to effectively dope versatile n-type organic semiconductors, including fullerene, n-type small molecules, and graphene by commercially available ammonium and phosphonium salts via in situ anion-induced electron transfer. In addition to the Lewis basicity of anions, we unveiled that the ionic binding strength between the cation and anion of the salts is also crucial in modulating the electron transfer strength of the dopants to affect the resulting doping efficiency. Furthermore, combined with the rational design of n-type molecules, an n-doped organic semiconductor is demonstrated to be thermally and environmentally stable. This finding provides a simple and generally applicable method to make highly efficient n-doped conductors which complements the well-established p-doped organics such as PEDOT:PSS for organic electronic applications.

  6. Persistent dopants and phase segregation in organolead mixed-halide perovskites

    SciTech Connect

    Rosales, Bryan A.; Men, Long; Cady, Sarah D.; Hanrahan, Michael P.; Rossini, Aaron J.; Vela, Javier

    2016-07-25

    Organolead mixed-halide perovskites such as CH3NH3PbX3–aX'a (X, X' = I, Br, Cl) are interesting semiconductors because of their low cost, high photovoltaic power conversion efficiencies, enhanced moisture stability, and band gap tunability. Using a combination of optical absorption spectroscopy, powder X-ray diffraction (XRD), and, for the first time, 207Pb solid state nuclear magnetic resonance (ssNMR), we probe the extent of alloying and phase segregation in these materials. Because 207Pb ssNMR chemical shifts are highly sensitive to local coordination and electronic structure, and vary linearly with halogen electronegativity and band gap, this technique can provide the true chemical speciation and composition of organolead mixed-halide perovskites. We specifically investigate samples made by three different preparative methods: solution phase synthesis, thermal annealing, and solid phase synthesis. 207Pb ssNMR reveals that nonstoichiometric dopants and semicrystalline phases are prevalent in samples made by solution phase synthesis. We show that these nanodomains are persistent after thermal annealing up to 200 °C. Further, a novel solid phase synthesis that starts from the parent, single-halide perovskites can suppress phase segregation but not the formation of dopants. Our observations are consistent with the presence of miscibility gaps and spontaneous spinodal decomposition of the mixed-halide perovskites at room temperature. This underscores how strongly different synthetic procedures impact the nanostructuring and composition of organolead halide perovskites. In conclusion, better optoelectronic properties and improved device stability and performance may be achieved through careful manipulation of the different phases and nanodomains present in these materials.

  7. The effect of dopants on the redox performance, microstructure and phase formation of ceria

    NASA Astrophysics Data System (ADS)

    Bonk, Alexander; Maier, Annika C.; Schlupp, Meike V. F.; Burnat, Dariusz; Remhof, Arndt; Delmelle, Renaud; Steinfeld, Aldo; Vogt, Ulrich F.

    2015-12-01

    A solid state reaction is employed to investigate the influence of ZrO2, HfO2, Pr6O11, TiO2 and Li2O doping on CeO2 for a possible use in solar thermochemical redox cycles. Ceramics with a macroscopic interconnected porosity, necessary for high mass transport during redox cycles, are produced by the addition of spherical carbon particles prior to sintering. Partial closure of porosity is detectable when CeO2 is doped with Pr, Zr or Hf, while Li co-doping retains interconnected porosity more effectively than other doped or pristine ceria samples. In dense ceramics, microstructures reveal a reduction of the average grain size of pristine CeO2 with increasing Zr and Hf dopant concentration. These trends are validated using Pechini synthesized materials of the same composition. The reduction in grain size is even more pronounced for Pr doped CeO2 and Li doped Hf0.1Ce0.9O2, while TiO2 doping induces softening of samples under operating conditions (>1500 °C) limiting its use for high temperature applications. The redox performance of MxCe1-xO2-δ (M = Zr, Hf; 0 ≤ x ≤ 0.2) can be increased significantly with increasing Zr and Hf dopant concentration. At x = 0.2 (Zr, Hf) the fuel production rates are doubled as compared to pristine CeO2. The redox performance of Hf doped CeO2 remains stable upon co-doping with Li+.

  8. Low-cost copper complexes as p-dopants in solution processable hole transport layers

    SciTech Connect

    Kellermann, Renate; Taroata, Dan; Maltenberger, Anna; Hartmann, David; Schmid, Guenter; Brabec, Christoph J.

    2015-09-07

    We demonstrate the usage of the Lewis-acidic copper(II)hexafluoroacetylacetonate (Cu(hfac){sub 2}) and copper(II)trifluoroacetylacetonate (Cu(tfac){sub 2}) as low-cost p-dopants for conductivity enhancement of solution processable hole transport layers based on small molecules in organic light emitting diodes (OLEDs). The materials were clearly soluble in mixtures of environmentally friendly anisole and xylene and spin-coated under ambient atmosphere. Enhancements of two and four orders of magnitude, reaching 4.0 × 10{sup −11} S/cm with a dopant concentration of only 2 mol% Cu(hfac){sub 2} and 1.5 × 10{sup −9} S/cm with 5 mol% Cu(tfac){sub 2} in 2,2′,7,7′-tetra(N,N-ditolyl)amino-9,9-spiro-bifluorene (spiro-TTB), respectively, were achieved. Red light emitting diodes were fabricated with reduced driving voltages and enhanced current and power efficiencies (8.6 lm/W with Cu(hfac){sub 2} and 5.6 lm/W with Cu(tfac){sub 2}) compared to the OLED with undoped spiro-TTB (3.9 lm/W). The OLED with Cu(hfac){sub 2} doped spiro-TTB showed an over 8 times improved LT{sub 50} lifetime of 70 h at a starting luminance of 5000 cd/m{sup 2}. The LT{sub 50} lifetime of the reference OLED with PEDOT:PSS was only 8 h. Both non-optimized OLEDs were operated at similar driving voltage and power efficiency.

  9. Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods

    NASA Astrophysics Data System (ADS)

    Mokhtari, S.; Safa, S.; Khayatian, A.; Azimirad, R.

    2017-02-01

    Structural and optical properties of bare ZnO nanorods, ZnO-encapsulated ZnO nanorods, and Cr-doped ZnO-encapsulated ZnO nanorods have been investigated. Encapsulated ZnO nanorods were grown using a simple two-stage method in which ZnO nanorods were first grown on a glass substrate directly from a hydrothermal bath, then encapsulated with a thin layer of Cr-doped ZnO by dip coating. Comparative study of x-ray diffraction patterns showed that Cr was successfully incorporated into the shell layer of ZnO nanorods. Moreover, energy-dispersive x-ray spectroscopy confirmed presence of Cr in this sample. It was observed that the thickness of the shell layer around the core of the ZnO nanorods was at least about 20 nm. Transmission electron microscopy of bare ZnO nanorods revealed single-crystalline structure. Based on optical results, both the encapsulation process and addition of Cr dopant decreased the optical bandgap of the samples. Indeed, the optical bandgap values of Cr-doped ZnO-encapsulated ZnO nanorods, ZnO-encapsulated ZnO nanorods, and bare ZnO nanorods were 2.89 eV, 3.15 eV, and 3.34 eV, respectively. The ultraviolet (UV) parameters demonstrated that incorporation of Cr dopant into the shell layer of ZnO nanorods considerably facilitated formation and transportation of photogenerated carriers, optimizing their performance as a practical UV detector. As a result, the photocurrent of the Cr-doped ZnO-encapsulated ZnO nanorods was the highest (0.6 mA), compared with ZnO-encapsulated ZnO nanorods and bare ZnO nanorods (0.21 mA and 0.06 mA, respectively).

  10. Biocompatibility of Polypyrrole with Human Primary Osteoblasts and the Effect of Dopants.

    PubMed

    Fahlgren, Anna; Bratengeier, Cornelia; Gelmi, Amy; Semeins, Cornelis M; Klein-Nulend, Jenneke; Jager, Edwin W H; Bakker, Astrid D

    2015-01-01

    Polypyrrole (PPy) is a conducting polymer that enables controlled drug release upon electrical stimulation. We characterized the biocompatibility of PPy with human primary osteoblasts, and the effect of dopants. We investigated the biocompatibility of PPy comprising various dopants, i.e. p-toluene sulfonate (PPy-pTS), chondroitin sulfate (PPy-CS), or dodecylbenzenesulfonate (PPy-DBS), with human primary osteoblasts. PPy-DBS showed the roughest appearance of all surfaces tested, and its wettability was similar to the gold-coated control. The average number of attached cells was 45% higher on PPy-DBS than on PPy-CS or PPy-pTS, although gene expression of the proliferation marker Ki-67 was similar in osteoblasts on all surfaces tested. Osteoblasts seeded on PPy-DBS or gold showed similar vinculin attachment points, vinculin area per cell area, actin filament structure, and Feret's diameter, while cells seeded on PPY-CS or PPY-pTS showed disturbed focal adhesions and were enlarged with disorganized actin filaments. Osteoblasts grown on PPy-DBS or gold showed enhanced alkaline phosphatase activity and osteocalcin gene expression, but reduced osteopontin gene expression compared to cells grown on PPy-pTS and PPy-CS. In conclusion, PPy doped with DBS showed excellent biocompatibility, which resulted in maintaining focal adhesions, cell morphology, cell number, alkaline phosphatase activity, and osteocalcin gene expression. Taken together, conducting polymers doped with DBS are well tolerated by osteoblasts. Our results could provide a basis for the development of novel orthopedic or dental implants with controlled release of antibiotics and pharmaceutics that fight infections or focally enhance bone formation in a tightly controlled manner.

  11. Effects of co-dopants on the magnetic properties of Ni-Zn ferrites

    NASA Astrophysics Data System (ADS)

    Wang, Sea-Fue; Hsu, Yung-Fu; Chou, Kai-Mou; Tsai, Jeng-Ting

    2015-01-01

    In this study, substitution of co-dopants into the Ni0.4Zn0.6Fe2O4 ceramic was performed. Al3+, Sn4+ and Ti4+ ions were added to the Ni0.4Zn0.4Li0.10Fe2.10O4 ceramic to improve magnetic properties. After sintering, all samples were indexed on a spinel structure and no detectable second phase was observed. When the concentration of dopants increased, the grain size of the Ni-Zn ferrites increased from 1.40 to 6.05 μm and the saturation magnetization declined from 428.8 emu/cm3 to 374.0 emu/cm3. Amongst the systems investigated, the Ni0.4Zn0.4Li0.10Al0.050Fe2.050O4, Ni0.4Zn0.425Li0.10Ti0.025Fe2.050O4, and Ni0.4Zn0.450Li0.10Ti0.050Fe2.000O4 ceramics revealed promising magnetic properties for applications. The measured initial permeability and quality factor were respectively 291.9 and 45.1 for the Ni0.4Zn0.4Li0.10Al0.050Fe2.050O4 ceramic, 316.9 and 42.5 for the Ni0.4Zn0.425Li0.10Ti0.025Fe2.050O4 ceramic, 429.4 and 34.8 for the Ni0.4Zn0.450Li0.10Ti0.050Fe2.000O4 ceramic. The high initial permeability and quality factor values associated with good electrical resistivity (>106 Ω-cm) qualify the ceramics for high frequency applications.

  12. Effect of Dopants on the Adsorption of Carbon Dioxide on Ceria Surfaces

    SciTech Connect

    Li, Meijun; Tumuluri, Uma; Wu, Zili; Dai, Sheng

    2015-09-25

    Here, high-surface-area nanosized CeO2 and M-doped CeO2 (M=Cu, La, Zr, and Mg) prepared by a surfactant-templated method were tested for CO2 adsorption. Cu, La, and Zr are doped into the lattice of CeO2, whereas Mg is dispersed on the CeO2 surface. The doping of Cu and La into CeO2 leads to an increase of the CO2 adsorption capacity, whereas the doping of Zr has little or no effect. The addition of Mg causes a decrease of the CO2 adsorption capacity at a low Mg content and a gradual increase at a higher content. The CO2 adsorption capacity follows the sequence Cu-CeO2>La-CeO2>Zr-CeO2≈CeO2>Mg-CeO2 at low dopant contents, in line with the relative amount of defect sites in the samples. It is the defect sites on the surface, not in the bulk of CeO2, modified by the dopants that play the vital role in CO2 chemisorption. Lastly, the role of surface oxygen vacancies is further supported by an in situ IR spectroscopic study of the surface chemistry during CO2 adsorption on the doped CeO2.

  13. Persistent dopants and phase segregation in organolead mixed-halide perovskites

    DOE PAGES

    Rosales, Bryan A.; Men, Long; Cady, Sarah D.; ...

    2016-07-25

    Organolead mixed-halide perovskites such as CH3NH3PbX3–aX'a (X, X' = I, Br, Cl) are interesting semiconductors because of their low cost, high photovoltaic power conversion efficiencies, enhanced moisture stability, and band gap tunability. Using a combination of optical absorption spectroscopy, powder X-ray diffraction (XRD), and, for the first time, 207Pb solid state nuclear magnetic resonance (ssNMR), we probe the extent of alloying and phase segregation in these materials. Because 207Pb ssNMR chemical shifts are highly sensitive to local coordination and electronic structure, and vary linearly with halogen electronegativity and band gap, this technique can provide the true chemical speciation and compositionmore » of organolead mixed-halide perovskites. We specifically investigate samples made by three different preparative methods: solution phase synthesis, thermal annealing, and solid phase synthesis. 207Pb ssNMR reveals that nonstoichiometric dopants and semicrystalline phases are prevalent in samples made by solution phase synthesis. We show that these nanodomains are persistent after thermal annealing up to 200 °C. Further, a novel solid phase synthesis that starts from the parent, single-halide perovskites can suppress phase segregation but not the formation of dopants. Our observations are consistent with the presence of miscibility gaps and spontaneous spinodal decomposition of the mixed-halide perovskites at room temperature. This underscores how strongly different synthetic procedures impact the nanostructuring and composition of organolead halide perovskites. In conclusion, better optoelectronic properties and improved device stability and performance may be achieved through careful manipulation of the different phases and nanodomains present in these materials.« less

  14. Dopant-assisted negative photoionization ion mobility spectrometry for sensitive detection of explosives.

    PubMed

    Cheng, Shasha; Dou, Jian; Wang, Weiguo; Chen, Chuang; Hua, Lei; Zhou, Qinghua; Hou, Keyong; Li, Jinghua; Li, Haiyang

    2013-01-02

    Ion mobility spectrometry (IMS) is a key trace detection technique for explosives and the development of a simple, stable, and efficient nonradioactive ionization source is highly demanded. A dopant-assisted negative photoionization (DANP) source has been developed for IMS, which uses a commercial VUV krypton lamp to ionize acetone as the source of electrons to produce negative reactant ions in air. With 20 ppm of acetone as the dopant, a stable current of reactant ions of 1.35 nA was achieved. The reactant ions were identified to be CO(3)(-)(H(2)O)(n) (K(0) = 2.44 cm(2) V(-1) s(-1)) by atmospheric pressure time-of-flight mass spectrometry, while the reactant ions in (63)Ni source were O(2)(-)(H(2)O)(n) (K(0) = 2.30 cm(2) V(-1) s(-1)). Finally, its capabilities for detection of common explosives including ammonium nitrate fuel oil (ANFO), 2,4,6-trinitrotoluene (TNT), N-nitrobis(2-hydroxyethyl)amine dinitrate (DINA), and pentaerythritol tetranitrate (PETN) were evaluated, and the limits of detection of 10 pg (ANFO), 80 pg (TNT), and 100 pg (DINA) with a linear range of 2 orders of magnitude were achieved. The time-of-flight mass spectra obtained with use of DANP source clearly indicated that PETN and DINA can be directly ionized by the ion-association reaction of CO(3)(-) to form PETN·CO(3)(-) and DINA·CO(3)(-) adduct ions, which result in good sensitivity for the DANP source. The excellent stability, good sensitivity, and especially the better separation between the reactant and product ion peaks make the DANP a potential nonradioactive ionization source for IMS.

  15. Location, Location, Location: Where Do Location-Based Services Fit into Your Institution's Social Media Mix?

    ERIC Educational Resources Information Center

    Nekritz, Tim

    2011-01-01

    Foursquare is a location-based social networking service that allows users to share their location with friends. Some college administrators have been thinking about whether and how to take the leap into location-based services, which are also known as geosocial networking services. These platforms, which often incorporate gaming elements like…

  16. Locatives in Kpelle.

    ERIC Educational Resources Information Center

    Kuha, Mai

    This paper examines the differences between locative expressions in Kpelle and English, based on the dialect of one native speaker of Kpelle. It discusses the crucial role of the reference object in defining the meaning of locatives in Kpelle, in contrast to English, where the characteristics of the object to be located are less important. An…

  17. Anomalous radial and angular strain relaxation around dilute p-, isoelectronic-, and n-type dopants in Si crystal

    NASA Astrophysics Data System (ADS)

    Zhao, Mingshu; Dong, Juncai; Chen, Dongliang

    2017-02-01

    Doping is widely applied in yielding desirable properties and functions in silicon technology; thus, fully understanding the relaxation mechanism for lattice-mismatch strain is of fundamental importance. Here we systematically study the local lattice distortion near dilute IIIA-, IVA-, and VA-group substitutional dopants in Si crystal using density functional theory, and anomalous radial and angular strain relaxation modes are first revealed. Both the nearest-neighbor (NN) bond-distances and the tetrahedral bond-angles are found to exhibit completely opposite dependence on the electronic configurations for the low Z (Z<26) and high Z (Z>26) dopants. More surprisingly, negative and positive angular shifts for the second NN twelve Si2 atoms are unveiled surrounding the p- and n-type dopants, respectively. While electron localization function shows that the doped hole and electron are highly localized near the dopants, hence being responsible for the abnormal angular shifts, a universal radial strain relaxation mechanism dominated by a competition of the Coulomb interactions among the ion-core, bond-charge, and the localized hole or electron is also proposed. These findings may prove to be instrumental in precise design of silicon-based solotronics.

  18. Direct observation of dopant distribution in GaAs compound semiconductors using phase-shifting electron holography and Lorentz microscopy.

    PubMed

    Sasaki, Hirokazu; Otomo, Shinya; Minato, Ryuichiro; Yamamoto, Kazuo; Hirayama, Tsukasa

    2014-06-01

    Phase-shifting electron holography and Lorentz microscopy were used to map dopant distributions in GaAs compound semiconductors with step-like dopant concentration. Transmission electron microscope specimens were prepared using a triple beam focused ion beam (FIB) system, which combines a Ga ion beam, a scanning electron microscope, and an Ar ion beam to remove the FIB damaged layers. The p-n junctions were clearly observed in both under-focused and over-focused Lorentz microscopy images. A phase image was obtained by using a phase-shifting reconstruction method to simultaneously achieve high sensitivity and high spatial resolution. Differences in dopant concentrations between 1 × 10(19) cm(-3) and 1 × 10(18) cm(-3) regions were clearly observed by using phase-shifting electron holography. We also interpreted phase profiles quantitatively by considering inactive layers induced by ion implantation during the FIB process. The thickness of an inactive layer at different dopant concentration area can be measured from the phase image.

  19. Doped Graphene for DNA Analysis: the Electrochemical Signal is Strongly Influenced by the Kind of Dopant and the Nucleobase Structure

    NASA Astrophysics Data System (ADS)

    Tian, Huidi; Wang, Lu; Sofer, Zdenek; Pumera, Martin; Bonanni, Alessandra

    2016-09-01

    Doping graphene with heteroatoms can alter the electronic and electrochemical properties of the starting material. Contrasting properties should be expected when the doping is carried out with electron donating species (n-type dopants) or with electron withdrawing species (p-type dopants). This in turn can have a profound influence on the electroanalytical performance of the doped material being used for the detection of specific probes. Here we investigate the electrochemical oxidation of DNA bases adenine, guanine, thymine and cytosine on two heteroatom-doped graphene platforms namely boron-doped graphene (p-type dopant) and nitrogen-doped graphene (n-type dopant). We found that overall, boron–doped graphene provided the best response in terms of electrochemical signal sensitivity for all bases. This is due to the electron deficiency of boron-doped graphene, which can promote the oxidation of DNA bases, as opposed to nitrogen-doped graphene which possesses an excess of electrons. Moreover, also the structure of the nucleobase was found to have significant influence on the obtained signal. Our study may open new frontiers in the electrochemical detection of DNA bases which is the first step for label-free DNA analysis.

  20. Doped Graphene for DNA Analysis: the Electrochemical Signal is Strongly Influenced by the Kind of Dopant and the Nucleobase Structure.

    PubMed

    Tian, Huidi; Wang, Lu; Sofer, Zdenek; Pumera, Martin; Bonanni, Alessandra

    2016-09-14

    Doping graphene with heteroatoms can alter the electronic and electrochemical properties of the starting material. Contrasting properties should be expected when the doping is carried out with electron donating species (n-type dopants) or with electron withdrawing species (p-type dopants). This in turn can have a profound influence on the electroanalytical performance of the doped material being used for the detection of specific probes. Here we investigate the electrochemical oxidation of DNA bases adenine, guanine, thymine and cytosine on two heteroatom-doped graphene platforms namely boron-doped graphene (p-type dopant) and nitrogen-doped graphene (n-type dopant). We found that overall, boron-doped graphene provided the best response in terms of electrochemical signal sensitivity for all bases. This is due to the electron deficiency of boron-doped graphene, which can promote the oxidation of DNA bases, as opposed to nitrogen-doped graphene which possesses an excess of electrons. Moreover, also the structure of the nucleobase was found to have significant influence on the obtained signal. Our study may open new frontiers in the electrochemical detection of DNA bases which is the first step for label-free DNA analysis.

  1. Influence of Dopant Loading on the Photo- and Electrochemical Properties of (N, O)-Co-doped Graphene.

    PubMed

    Baldoví, Hermenegildo G; Albarracín, Ferran; Álvaro, Mercedes; Ferrer, Belén; García, Hermenegildo

    2015-07-20

    A series of (N, O)-co-doped graphenes with different N and O loadings are prepared by the pyrolysis of natural chitosan. When the percentage of dopant increases, the conduction-band potential and charge-separation quantum yield increase, whereas the charge-separation lifetime decreases.

  2. Investigation of iodine dopant amount effects on dye-sensitized hierarchically structured ZnO solar cells

    SciTech Connect

    Zheng, Yan-Zhen; Ding, Haiyang; Tao, Xia; Chen, Jian-Feng

    2014-07-01

    Highlights: • The effect of I amount on the photovoltaic performance was investigated. • The enhancement in η of ZnO:I DSSCs was from 38% to 77% compared with ZnO DSSCs. • Appropriate I doping enhanced light harness and inhibited charge recombination. - Abstract: We prepare a series of iodine doped zinc oxide monodisperse aggregates (ZnO:I) with various iodine concentrations as the photoanodes of dye-sensitized solar cells (DSSCs) to study iodine dopant amount-dependent photovoltaic performance. The iodine-doped DSSCs achieve overall conversion efficiency (η) of 3.6–4.6%. The enhancement in η of ZnO:I DSSCs is from 38% to 77% as compared to undoped ZnO DSSCs. The significantly enhanced η of DSSCs is found to be correlated with iodine dopant amount. The optimum iodine dopant amount is determined to be 2.3 wt% by X-ray photoelectron spectroscopy. Furthermore, the incident photon to current conversion efficiency and electrochemical impedance spectroscopy data reveal a systematic correlation between photovoltaic properties and the iodine dopant amount. The enhancement of open-circuit potential of ZnO:I cells is arising from negative shift of their flat-band potential, as demonstrated by Mott–Schottky measurement.

  3. The role of the domain size and titanium dopant in nanocrystalline hematite thin films for water photolysis

    SciTech Connect

    Yan, Danhua; Tao, Jing; Kisslinger, Kim; Cen, Jiajie; Wu, Qiyuan; Orlov, Alexander; Liu, Mingzhao

    2015-10-13

    In this study, we develop a novel technique for preparing high quality Ti-doped hematite thin films for photoelectrochemical (PEC) water splitting, through sputtering deposition of metallic iron films from an iron target embedded with titanium (dopants) pellets, followed by a thermal oxidation step that turns the metal films into doped hematite. It is found that the hematite domain size can be tuned from ~10 nm to over 100 nm by adjusting the sputtering atmosphere from more oxidative to mostly inert. The better crystallinity at a larger domain size ensures excellent PEC water splitting performance, leading to record high photocurrent from pure planar hematite thin films on FTO substrates. Titanium doping further enhances the PEC performance of hematite photoanodes. The photocurrent is improved by 50%, with a titanium dopant concentration as low as 0.5 atom%. It is also found that the role of the titanium dopant in improving the PEC performance is not apparently related to the films’ electrical conductivity which had been widely believed, but is more likely due to the passivation of surface defects by the titanium dopants.

  4. The role of the domain size and titanium dopant in nanocrystalline hematite thin films for water photolysis

    DOE PAGES

    Yan, Danhua; Tao, Jing; Kisslinger, Kim; ...

    2015-10-13

    In this study, we develop a novel technique for preparing high quality Ti-doped hematite thin films for photoelectrochemical (PEC) water splitting, through sputtering deposition of metallic iron films from an iron target embedded with titanium (dopants) pellets, followed by a thermal oxidation step that turns the metal films into doped hematite. It is found that the hematite domain size can be tuned from ~10 nm to over 100 nm by adjusting the sputtering atmosphere from more oxidative to mostly inert. The better crystallinity at a larger domain size ensures excellent PEC water splitting performance, leading to record high photocurrent frommore » pure planar hematite thin films on FTO substrates. Titanium doping further enhances the PEC performance of hematite photoanodes. The photocurrent is improved by 50%, with a titanium dopant concentration as low as 0.5 atom%. It is also found that the role of the titanium dopant in improving the PEC performance is not apparently related to the films’ electrical conductivity which had been widely believed, but is more likely due to the passivation of surface defects by the titanium dopants.« less

  5. Doped Graphene for DNA Analysis: the Electrochemical Signal is Strongly Influenced by the Kind of Dopant and the Nucleobase Structure

    PubMed Central

    Tian, Huidi; Wang, Lu; Sofer, Zdenek; Pumera, Martin; Bonanni, Alessandra

    2016-01-01

    Doping graphene with heteroatoms can alter the electronic and electrochemical properties of the starting material. Contrasting properties should be expected when the doping is carried out with electron donating species (n-type dopants) or with electron withdrawing species (p-type dopants). This in turn can have a profound influence on the electroanalytical performance of the doped material being used for the detection of specific probes. Here we investigate the electrochemical oxidation of DNA bases adenine, guanine, thymine and cytosine on two heteroatom-doped graphene platforms namely boron-doped graphene (p-type dopant) and nitrogen-doped graphene (n-type dopant). We found that overall, boron–doped graphene provided the best response in terms of electrochemical signal sensitivity for all bases. This is due to the electron deficiency of boron-doped graphene, which can promote the oxidation of DNA bases, as opposed to nitrogen-doped graphene which possesses an excess of electrons. Moreover, also the structure of the nucleobase was found to have significant influence on the obtained signal. Our study may open new frontiers in the electrochemical detection of DNA bases which is the first step for label-free DNA analysis. PMID:27623951

  6. Effects of In, Al and Sn dopants on the structural and optical properties of ZnO thin films.

    PubMed

    Caglar, Yasemin; Ilican, Saliha; Caglar, Mujdat; Yakuphanoglu, Fahrettin

    2007-07-01

    Effect of In, Al and Sn dopants on the optical and structural properties of ZnO thin films have been investigated by X-ray diffraction technique and optical characterization method. X-ray diffraction patterns confirm that the films have polycrystalline nature. The thin films have (002) as the preferred orientation. This (002) preferred orientation is due to the minimal surface energy which the hexagonal structure, c-plane to the ZnO crystallites, corresponds to the densest packed plane. The grain size values of the films are found to be 29.0, 35.2 and 39.5 nm for In, Al and Sn doped ZnO thin films, respectively. The optical band gaps of the films were calculated. The absorption edge shifts to the lower wavelengths with In, Al and Sn dopants. The inclusion of dopant into films expands also width of localized states as E(UIn)>E(UAl)>E(USn). The refractive index dispersion curves obey the single oscillator model. The dispersion parameters and optical constants of the films were determined. These parameters changed with In, Al and Sn dopants.

  7. Random Dopant Threshold Voltage Fluctuations in 50 nm Epitaxial Channel MOSFETs: A 3D 'Atomoc' Simulation Study

    NASA Technical Reports Server (NTRS)

    Asenov, Asen

    2000-01-01

    3D 'atomistic' simulations are used to study random dopant related threshold voltage fluctuations in 50 nm MOSFETs. Comparisons are made between conventionally doped transistors and transistors with thin epitaxial silicon layers on heavily doped silicon. Issues related to both the optimum threshold voltage control and the suppression of the threshold voltage dispersion are addressed.

  8. Ionization of EPA Contaminants in Direct and Dopant-Assisted Atmospheric Pressure Photoionization and Atmospheric Pressure Laser Ionization

    NASA Astrophysics Data System (ADS)

    Kauppila, Tiina J.; Kersten, Hendrik; Benter, Thorsten

    2015-06-01

    Seventy-seven EPA priority environmental pollutants were analyzed using gas chromatography-mass spectrometry (GC-MS) equipped with an optimized atmospheric pressure photoionization (APPI) and an atmospheric pressure laser ionization (APLI) interface with and without dopants. The analyzed compounds included e.g., polycyclic aromatic hydrocarbons (PAHs), nitro compounds, halogenated compounds, aromatic compounds with phenolic, acidic, alcohol, and amino groups, phthalate and adipatic esters, and aliphatic ethers. Toluene, anisole, chlorobenzene, and acetone were tested as dopants. The widest range of analytes was ionized using direct APPI (66/77 compounds). The introduction of dopants decreased the amount of compounds ionized in APPI (e.g., 54/77 with toluene), but in many cases the ionization efficiency increased. While in direct APPI the formation of molecular ions via photoionization was the main ionization reaction, dopant-assisted (DA) APPI promoted ionization reactions, such as charge exchange and proton transfer. Direct APLI ionized a much smaller amount of compounds than APPI (41/77 compounds), showing selectivity towards compounds with low ionization energies (IEs) and long-lived resonantly excited intermediate states. DA-APLI, however, was able to ionize a higher amount of compounds (e.g. 51/77 with toluene), as the ionization took place entirely through dopant-assisted ion/molecule reactions similar to those in DA-APPI. Best ionization efficiency in APPI and APLI (both direct and DA) was obtained for PAHs and aromatics with O- and N-functionalities, whereas nitro compounds and aliphatic ethers were the most difficult to ionize. Halogenated aromatics and esters were (mainly) ionized in APPI, but not in APLI.

  9. Ionization of EPA contaminants in direct and dopant-assisted atmospheric pressure photoionization and atmospheric pressure laser ionization.

    PubMed

    Kauppila, Tiina J; Kersten, Hendrik; Benter, Thorsten

    2015-06-01

    Seventy-seven EPA priority environmental pollutants were analyzed using gas chromatography-mass spectrometry (GC-MS) equipped with an optimized atmospheric pressure photoionization (APPI) and an atmospheric pressure laser ionization (APLI) interface with and without dopants. The analyzed compounds included e.g., polycyclic aromatic hydrocarbons (PAHs), nitro compounds, halogenated compounds, aromatic compounds with phenolic, acidic, alcohol, and amino groups, phthalate and adipatic esters, and aliphatic ethers. Toluene, anisole, chlorobenzene, and acetone were tested as dopants. The widest range of analytes was ionized using direct APPI (66/77 compounds). The introduction of dopants decreased the amount of compounds ionized in APPI (e.g., 54/77 with toluene), but in many cases the ionization efficiency increased. While in direct APPI the formation of molecular ions via photoionization was the main ionization reaction, dopant-assisted (DA) APPI promoted ionization reactions, such as charge exchange and proton transfer. Direct APLI ionized a much smaller amount of compounds than APPI (41/77 compounds), showing selectivity towards compounds with low ionization energies (IEs) and long-lived resonantly excited intermediate states. DA-APLI, however, was able to ionize a higher amount of compounds (e.g. 51/77 with toluene), as the ionization took place entirely through dopant-assisted ion/molecule reactions similar to those in DA-APPI. Best ionization efficiency in APPI and APLI (both direct and DA) was obtained for PAHs and aromatics with O- and N-functionalities, whereas nitro compounds and aliphatic ethers were the most difficult to ionize. Halogenated aromatics and esters were (mainly) ionized in APPI, but not in APLI.

  10. Effect of cation dopants in zirconia on interfacial properties in nickel/zirconia systems: an atomistic modeling study

    NASA Astrophysics Data System (ADS)

    Iskandarov, Albert M.; Ding, Yingna; Umeno, Yoshitaka

    2017-02-01

    Cation doping is often used to stabilize the cubic or tetragonal phase of zirconia for enhanced thermomechanical and electrochemical properties. In the present paper we report a combined density functional theory (DFT) and molecular dynamics study of the effect of Sc, Y, and Ce dopants on properties of Ni/\\text{Zr}{{\\text{O}}2} interfaces and nickel sintering. First, we develop an MD model that is based on DFT data for various nickel/zirconia interfaces. Then, we employ the model to simulate Ni nanoparticles coalescing on a zirconia surface. The results show the possibility of particle migration by means of fast sliding over the surface when the work of separation is small (<1.0\\text{J} {{\\text{m}}-2} ). The sliding observed for the O-terminated Ni(1 1 1)/\\text{Zr}{{\\text{O}}2} (1 1 1) interface is not affected by dopants in zirconia because the work of separation of the doped interface stays small. The most pronounced effect of the dopants is observed for the Zr-terminated Ni(1 1 1)/\\text{Zr}{{\\text{O}}2} (1 1 1) interface, which possesses a large work of separation (4.4\\text{J} {{\\text{m}}-2} ) and thus restricts the sliding mechanism of Ni nanoparticle migration. DFT calculations for the interface revealed that dopants with a smaller covalent radius result in a larger energy barriers for Ni diffusion. We analyze this effect and discuss how it can be used to suppress nickel sintering by using the dopant selection.

  11. Reversible micromachining locator

    DOEpatents

    Salzer, Leander J.; Foreman, Larry R.

    1999-01-01

    This invention provides a device which includes a locator, a kinematic mount positioned on a conventional tooling machine, a part carrier disposed on the locator and a retainer ring. The locator has disposed therein a plurality of steel balls, placed in an equidistant position circumferentially around the locator. The kinematic mount includes a plurality of magnets which are in registry with the steel balls on the locator. In operation, a blank part to be machined is placed between a surface of a locator and the retainer ring (fitting within the part carrier). When the locator (with a blank part to be machined) is coupled to the kinematic mount, the part is thus exposed for the desired machining process. Because the locator is removably attachable to the kinematic mount, it can easily be removed from the mount, reversed, and reinserted onto the mount for additional machining. Further, the locator can likewise be removed from the mount and placed onto another tooling machine having a properly aligned kinematic mount. Because of the unique design and use of magnetic forces of the present invention, positioning errors of less than 0.25 micrometer for each machining process can be achieved.

  12. Reversible micromachining locator

    DOEpatents

    Salzer, L.J.; Foreman, L.R.

    1999-08-31

    This invention provides a device which includes a locator, a kinematic mount positioned on a conventional tooling machine, a part carrier disposed on the locator and a retainer ring. The locator has disposed therein a plurality of steel balls, placed in an equidistant position circumferentially around the locator. The kinematic mount includes a plurality of magnets which are in registry with the steel balls on the locator. In operation, a blank part to be machined is placed between a surface of a locator and the retainer ring (fitting within the part carrier). When the locator (with a blank part to be machined) is coupled to the kinematic mount, the part is thus exposed for the desired machining process. Because the locator is removably attachable to the kinematic mount, it can easily be removed from the mount, reversed, and reinserted onto the mount for additional machining. Further, the locator can likewise be removed from the mount and placed onto another tooling machine having a properly aligned kinematic mount. Because of the unique design and use of magnetic forces of the present invention, positioning errors of less than 0.25 micrometer for each machining process can be achieved. 7 figs.

  13. Heterogeneity of nervous system mitochondria: location, location, location!

    PubMed

    Dubinsky, Janet M

    2009-08-01

    Mitochondrial impairments have been associated with many neurological disorders, from inborn errors of metabolism or genetic disorders to age and environmentally linked diseases of aging (DiMauro S., Schon E.A. 2008. Mitochondrial disorders in the nervous system. Annu. Rev., Neurosci. 31, 91-123.). In these disorders, specific nervous system components or brain regions appear to be initially more susceptible to the triggering event or pathological process. Such regional variation in susceptibility to multiple types of stressors raises the possibility that inherent differences in mitochondrial function may mediate some aspect of pathogenesis. Regional differences in the distribution or number of mitochondria, mitochondrial enzyme activities, enzyme expression levels, mitochondrial genes or availability of necessary metabolites become attractive explanations for selective vulnerability of a nervous system structure. While regionally selective mitochondrial vulnerability has been documented, regional variations in other cellular and tissue characteristics may also contribute to metabolic impairment. Such environmental variables include high tonic firing rates, neurotransmitter phenotype, location of mitochondria within a neuron, or the varied tissue perfusion pressure of different cerebral arterial branches. These contextual variables exert regionally distinct regulatory influences on mitochondria to tune their energy production to local demands. Thus to understand variations in mitochondrial functioning and consequent selective vulnerability to injury, the organelle must be placed within the context of its cellular, functional, developmental and neuroanatomical environment.

  14. Wet, dry, Dopants and Defects - an Integrated View of Diffusion in Olivine as a Prototypical Silicate

    NASA Astrophysics Data System (ADS)

    Dohmen, R.; Costa, F.; Chakraborty, S.

    2008-12-01

    Knowledge of diffusion coefficients of different species in minerals is a necessary pre-requisite for understanding and modeling the compositional evolution of rocks. Their use to determine time scales of various geological processes, to understand the reaction mechanisms and rheological behavior of rocks and minerals, and to evaluate the significance of dates and temperatures obtained from geochronometers and geothermometers, is becoming routine. However, many aspects of diffusion behavior of minerals remain enigmatic. Two of these are: (1) Do the presence of small amounts of impurities ("dopants") affect diffusion rates, and if yes, how? (2) Water is known to enhance transport rates, but exactly at what conditions and how does the wet to dry transition occur? Can it be predicted? These questions can be approached by developing an appropriate description of the diffusion process in terms of point defect thermodynamics. The large body of systematic diffusion data and natural observations in olivine makes it the mineral of choice to explore this avenue. Diffusion coefficients for various cations as well as O are known typically as a function of temperature, and often as a function of other variables such as pressure, oxygen fugacity or water fugacity. We developed a quantitative point defect model that allows the role of trace elements (i.e. dopants in the terminology of material science) in controlling transport properties to be quantified [1]. In addition we explored the nature of wet to dry transition of these transport properties in olivine [2]. We have now combined these approaches to develop an integrated scheme for describing point defect chemistry and transport properties of olivine containing arbitrary trace elements, in the presence or absence of water. The approach is perfectly general and can be extended to any other mineral provided enough data are available. Oxygen fugacity is known to affect transport rates of Fe-bearing silicates but the extent of

  15. Reversible micromachining locator

    SciTech Connect

    Salzer, Leander J.; Foreman, Larry R.

    2002-01-01

    A locator with a part support is used to hold a part onto the kinematic mount of a tooling machine so that the part can be held in or replaced in exactly the same position relative to the cutting tool for machining different surfaces of the part or for performing different machining operations on the same or different surfaces of the part. The locator has disposed therein a plurality of steel balls placed at equidistant positions around the planar surface of the locator and the kinematic mount has a plurality of magnets which alternate with grooves which accommodate the portions of the steel balls projecting from the locator. The part support holds the part to be machined securely in place in the locator. The locator can be easily detached from the kinematic mount, turned over, and replaced onto the same kinematic mount or another kinematic mount on another tooling machine without removing the part to be machined from the locator so that there is no need to touch or reposition the part within the locator, thereby assuring exact replication of the position of the part in relation to the cutting tool on the tooling machine for each machining operation on the part.

  16. Automatic vehicle location system

    NASA Technical Reports Server (NTRS)

    Hansen, G. R., Jr. (Inventor)

    1973-01-01

    An automatic vehicle detection system is disclosed, in which each vehicle whose location is to be detected carries active means which interact with passive elements at each location to be identified. The passive elements comprise a plurality of passive loops arranged in a sequence along the travel direction. Each of the loops is tuned to a chosen frequency so that the sequence of the frequencies defines the location code. As the vehicle traverses the sequence of the loops as it passes over each loop, signals only at the frequency of the loop being passed over are coupled from a vehicle transmitter to a vehicle receiver. The frequencies of the received signals in the receiver produce outputs which together represent a code of the traversed location. The code location is defined by a painted pattern which reflects light to a vehicle carried detector whose output is used to derive the code defined by the pattern.

  17. The effect of diketopyrrolopyrrole (DPP) group inclusion in p-cyanophenyl end-capped oligothiophene used as a dopant in P3HT:PCBM BHJ solar cells.

    PubMed

    Manninen, V M; Heiskanen, J P; Pankov, D; Kastinen, T; Hukka, T I; Hormi, O E O; Lemmetyinen, H J

    2014-10-01

    In this work, two p-cyanophenyl end-capped oligothiophenes, and , were compared as dopants in the P3HT:PC60BM bulk heterojunction (BHJ) layer of inverted organic solar cells. Inclusion of significantly increased the average efficiency of the solar cells, while the increase using doping in the cell efficiency was minor. In the BHJ photoactive layer, the dopant molecules are close to and interact with P3HT and PC60BM molecules. Intra- and intermolecular interactions of the dopant molecules with P3HT and PC60BM were studied in chloroform solutions. Energy or electron transfer from the dopant molecules to PC60BM takes place as the fluorescence emission intensity and lifetime of the dopant molecules decreased in the presence of PC60BM. In the case of doping with , doped cells had higher absorbance than the non-doped reference cell and doping broadens the cell absorption to the near IR-region. Thus, the dopant molecules act as additional light absorbers in the photoactive layer and transfer energy or electrons to PC60BM, which increases the short circuit current and power conversion efficiency of the cell. Also, the emission of the cells doped with decreased when compared to that of the reference cell. In this case, P3HT can give electrons or energy to dopant molecules and the cell current and efficiency are further increased.

  18. Hydrogen adsorption and storage on Palladium - functionalized graphene with NH-dopant: A first principles calculation

    NASA Astrophysics Data System (ADS)

    Faye, Omar; Szpunar, Jerzy A.; Szpunar, Barbara; Beye, Aboubaker Chedikh

    2017-01-01

    We conducted a detailed theoretical investigation of the structural and electronic properties of single and double sided Pd-functionalized graphene and NH-doped Pd-functionalized graphene, which are shown to be efficient materials for hydrogen storage. Nitrene radical dopant was an effective addition required for enhancing the Pd binding on the graphene sheet as well as the storage of hydrogen. We found that up to eight H2 molecules could be adsorbed by double-sided Pd-functionalized graphene at 0 K with an average binding energy in the range 1.315-0.567 eVA gravimetric hydrogen density of 3.622 wt% was reached in the Pd-functionalized graphene on both sides. The binding mechanism of H2 molecules came not only the polarization mechanism between Pd and H atoms but also from the binding of the Pd atoms on the graphene sheet and the orbital hybridization. The most crucial part of our work is measuring the effect of nitrene radical on the H2 adsorption on Pd-functionalized graphene. Our calculations predicted that the addition of NH radicals on Pd-functionalized graphene enhance the binding of H2 molecules, which helps also to avoid the desorption of Pd(H2)n (n = 1-5) complexes from graphene sheet. Our results also predict Pd-functionalized NH-doped graphene is a potential hydrogen storage medium for on-board applications.

  19. Electronic transport through carbon nanotubes - effect of contacts, topological defects, dopants and chemisorbed impurities

    SciTech Connect

    Maiti, A; Hoekstra, J; Andzelm, J; Govind, N; Ricca, A; Svizhenko, A; Mehrez, H; Anantram, M P

    2005-02-11

    Electronics based on carbon nanotubes (CNT) has received a lot of attention recently because of its tremendous application potential, such as active components and interconnects in nanochips, nanoelectromechanical systems (NEMS), display devices, and chemical and biological sensors. However, as with most nanoelectronic systems, successful commercial deployment implies structural control at the molecular level. To this end, it is clearly necessary to understand the effect of contacts, topological defects, dopants, and chemisorbed atoms and molecules on the electronic transport through CNT's. This paper summarizes our computational efforts to address some of the above questions. Examples include: wetting properties and bonding strength of metal contacts on the CNT surface, the effect of Stone-Wales defects on the chemisorption of O{sub 2} and NH3, and how such chemisorbed species and defects effect the electronic transmission and conductance. Our approach is based on first-principles density functional theory (DFT) to compute equilibrium structures, and nonequilibrium Green's function (NEGF) methods, using both DFT and semi-empirical tight-binding formalisms, for computing electronic transport properties.

  20. High thermoelectric performance by resonant dopant indium in nanostructured SnTe.

    PubMed

    Zhang, Qian; Liao, Bolin; Lan, Yucheng; Lukas, Kevin; Liu, Weishu; Esfarjani, Keivan; Opeil, Cyril; Broido, David; Chen, Gang; Ren, Zhifeng

    2013-08-13

    From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this work, we studied the thermoelectric properties of nanostructured SnTe with different dopants, and found indium-doped SnTe showed extraordinarily large Seebeck coefficients that cannot be explained properly by the conventional two-valence band model. We attributed this enhancement of Seebeck coefficients to resonant levels created by the indium impurities inside the valence band, supported by the first-principles simulations. This, together with the lower thermal conductivity resulting from the decreased grain size by ball milling and hot pressing, improved both the peak and average nondimensional figure-of-merit (ZT) significantly. A peak ZT of ∼1.1 was obtained in 0.25 atom % In-doped SnTe at about 873 K.

  1. A Probabilistic Finite State Logic Machine Realized Experimentally on a Single Dopant Atom.

    PubMed

    Fresch, Barbara; Bocquel, Juanita; Rogge, Sven; Levine, R D; Remacle, F

    2017-03-08

    Exploiting the potential of nanoscale devices for logic processing requires the implementation of computing functionalities departing from the conventional switching paradigm. We report on the design and the experimental realization of a probabilistic finite state machine in a single phosphorus donor atom placed in a silicon matrix electrically addressed and probed by scanning tunneling spectroscopy (STS). The single atom logic unit simulates the flow of visitors in a maze whose topology is determined by the dynamics of the electronic transport through the states of the dopant. By considering the simplest case of a unique charge state for which three electronic states can be resolved, we demonstrate an efficient solution of the following problem: in a maze of four connected rooms, what is the optimal combination of door opening rates in order to maximize the time that visitors spend in one specific chamber? The implementation takes advantage of the stochastic nature of electron tunneling, while the output remains the macroscopic current whose reading can be realized with standard techniques and does not require single electron sensitivity.

  2. Optical activity and defect/dopant evolution in ZnO implanted with Er

    SciTech Connect

    Azarov, Alexander; Galeckas, Augustinas; Kuznetsov, Andrej; Monakhov, Edouard; Svensson, Bengt G.; Hallén, Anders

    2015-09-28

    The effects of annealing on the optical properties and defect/dopant evolution in wurtzite (0001) ZnO single crystals implanted with Er ions are studied using a combination of Rutherford backscattering/channeling spectrometry and photoluminescence measurements. The results suggest a lattice recovery behavior dependent on ion dose and involving formation/evolution of an anomalous multipeak defect distribution, thermal stability of optically active Er complexes, and Er outdiffusion. An intermediate defect band occurring between the surface and ion-induced defects in the bulk is stable up to 900 °C and has a photoluminescence signature around 420 nm well corresponding to Zn interstitials. The optical activity of the Er atoms reaches a maximum after annealing at 700 °C but is not directly associated to the ideal Zn site configuration, since the Er substitutional fraction is maximal already in the as-implanted state. In its turn, annealing at temperatures above 700 °C leads to dissociation of the optically active Er complexes with subsequent outdiffusion of Er accompanied by the efficient lattice recovery.

  3. Dopant-mediated structural and magnetic properties of TbMnO3

    NASA Astrophysics Data System (ADS)

    Sharma, Vinit; McDannald, A.; Staruch, M.; Ramprasad, R.; Jain, M.

    2015-07-01

    Structural and magnetic properties of the doped terbium manganites (Tb,A)MnO3 (A = Gd, Dy, and Ho) have been investigated using first-principles calculations and further confirmed by subsequent experimental studies. Both computational and experimental studies suggest that compared to the parent material, namely, TbMnO3 (with a magnetic moment of 9.7 μ B for Tb3+) Dy- and Ho-ion substituted TbMnO3 results in an increase in the magnetic susceptibility at low fields ( ≤ 10.6 μ B for Dy3+ and Ho3+). The observed spiral-spin AFM order in TbMnO3 is stable with respect to the dopant substitutions, which modify the Mn-O-Mn bond angles and lead to stronger the ferromagnetic component of the magnetic moment. Given the fact that magnetic ordering in TbMnO3 causes the ferroelectricity, this is an important step in the field of the magnetically driven ferroelectricity in the class of magnetoelectric multiferroics, which traditionally have low magnetic moments due to the predominantly antiferromagnetic order. In addition, the present study reveals important insights on the phenomenological coupling mechanism in detail, which is essential in order to design new materials with enhanced magneto-electric effects at higher temperatures.

  4. Computer modelling of the reduction of rare earth dopants in barium aluminate

    SciTech Connect

    Rezende, Marcos V. dos S; Valerio, Mario E.G.; Jackson, Robert A.

    2011-08-15

    Long lasting phosphorescence in barium aluminates can be achieved by doping with rare earth ions in divalent charge states. The rare earth ions are initially in a trivalent charge state, but are reduced to a divalent charge state before being doped into the material. In this paper, the reduction of trivalent rare earth ions in the BaAl{sub 2}O{sub 4} lattice is studied by computer simulation, with the energetics of the whole reduction and doping process being modelled by two methods, one based on single ion doping and one which allows dopant concentrations to be taken into account. A range of different reduction schemes are considered and the most energetically favourable schemes identified. - Graphical abstract: The doping and subsequent reduction of a rare earth ion into the barium aluminate lattice. Highlights: > The doping of barium aluminate with rare earth ions reduced in a range of atmospheres has been modelled. > The overall solution energy for the doping process for each ion in each reducing atmosphere is calculated using two methods. > The lowest energy reduction process is predicted and compared with experimental results.

  5. Summary of the radiation damage studies of the SDC dopants in polystyrene

    SciTech Connect

    Pla-Dalmau, A.; Foster, G.W.; Zhang, G.

    1993-12-22

    Approximately 80 commercially available fluorescent organic compounds were studied as dopants in a polystyrene matrix for possible use in wavelength shifting (WLS) fibers. The goal was to find a new green- emitting WLS fiber which would outperform in light yield and decay time the currently available fiber doped with K-27. Therefore the fluorescent compounds of interest should exhibit the following spectroscopic characteristics in polystyrene: {lambda}{sub abs} = 400--450 nm,{lambda}{sub em} = 450--550 nm, {tau} = 3--7 ns and quantum efficiency of minimum 0.7. Polystyrene samples doped with different fluorescent compounds were prepared and characterized. Of all the compounds tested, only a series of coumarins exhibited the spectroscopic characteristics of interest. Radiation damage studies had to be performed on these samples in order to condusively determine if they were better candidates than K-27 for green WLS fibers. AU samples except those showing opacity or deep coloration were irradiated. They were, however, separated in two sets. Radiation damage set No. 20 was mainly formed by the coumarin derivatives. Radiation damage set No. 22 was based on the remaining samples. The irradiations were performed at the Phoenix Memorial Laboratory using a {sup 60}Co source. Both sets were exposed to a total dose of 10 Mrad in air, at a dose rate of 1.8 Mrad/h. Transmittance measurements were recorded before and after irradiation, and after annealing. After irradiation, the samples were annealed in oxygen to accelerate the recovery process.

  6. High thermoelectric performance by resonant dopant indium in nanostructured SnTe

    PubMed Central

    Zhang, Qian; Liao, Bolin; Lan, Yucheng; Lukas, Kevin; Liu, Weishu; Esfarjani, Keivan; Opeil, Cyril; Broido, David; Chen, Gang; Ren, Zhifeng

    2013-01-01

    From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this work, we studied the thermoelectric properties of nanostructured SnTe with different dopants, and found indium-doped SnTe showed extraordinarily large Seebeck coefficients that cannot be explained properly by the conventional two-valence band model. We attributed this enhancement of Seebeck coefficients to resonant levels created by the indium impurities inside the valence band, supported by the first-principles simulations. This, together with the lower thermal conductivity resulting from the decreased grain size by ball milling and hot pressing, improved both the peak and average nondimensional figure-of-merit (ZT) significantly. A peak ZT of ∼1.1 was obtained in 0.25 atom % In-doped SnTe at about 873 K. PMID:23901106

  7. Gain-shift induced by dopant concentration ratio in a Thulium-Bismuth doped fiber amplifier.

    PubMed

    Emami, Siamak Dawazdah; Zarifi, Atieh; Rashid, Hairul Azhar Abdul; Muhammad, Ahmad Razif; Paul, Mukul Chandra; Halder, Arindam; Bhadra, Shyamal Kumar; Ahmad, Harith; Harun, Sulaiman Wadi

    2014-03-24

    This paper details the effect of Thulium and Bismuth concentration ratio on gain-shift at 1800 nm and 1400 nm band in a Thulium-Bismuth Doped Fiber Amplifier (TBDFA). The effect of Thulium and Bismuth's concentration ratio on gain shifting is experimentally established and subsequently numerically modeled. The analysis is carried out via the cross relaxation and energy transfer processes between the two dopants. The energy transfer in this process was studied through experimental and numerical analysis of three samples with different Tm/Bi concentration ratio of 2, 0.5 and 0.2, respectively. The optimized length for the three samples (TBDFA-1, TBDFA-2 and TBDFA-3) was determined and set at 6.5, 4 and 5.5 m, respectively. In addition, the experimental result of Thulium Doped Fiber Amplifier (TDFA) was compared with the earlier TBDFA samples. The gain for TBDFA-1, with the highest Tm/Bi ratio, showed no shift at the 1800 nm region, while TBDFA-2 and TBDFA-3, possessing a lower Tm/Bi concentration ratio, shifted to the region of 1950 and 1960 nm, respectively. The gain shifting from 1460 nm to 1490 nm is also observed. The numerical model demonstrates that the common 3F4 layer for 1460 nm emission (3H4→3F4), and 1800 nm emission (3F4→3H6)inversely affects the 1460 nm and 1800 nm gain shifting.

  8. Dopant effect of yttrium and the growth and adherence of alumina on nickel-aluminum alloys

    NASA Technical Reports Server (NTRS)

    Anderson, A. B.; Mehandru, S. P.; Smialek, J. L.

    1985-01-01

    The atom superposition and electron delocalization molecular orbital theory and large cluster models have been employed to study cation vacancy diffusion in alpha-Al2O3 and the bonding of alpha-Al2O3 to nickel, aluminum, and yttrium surfaces. Al(3+) diffusion barriers in alpha-Al2O3 by the vacancy mechanism are in reasonable agreement with experiment. The barrier to Y(3+) diffusion is predicted to be much higher. Since addition of yttrium to transition metal alloys is known to reduce the growth rate and stress convolutions in protective alumina scales, this result suggests the rate-limiting step in scale growth is cation vacancy diffusion. This may partially explain the beneficial effect of yttrium dopants on scale adhesion. The theory also predicts a very strong bonding between alumina and yttrium at the surface of the alloy. This may also be important to the adhesion phenomenon. It is also found that aluminum and yttrium atoms bond very strongly to nickel because of charge transfer from their higher lying valence orbitals to the lower lying nickel s-d band.

  9. The study of dopant segregation behavior during the growth of GaAs in microgravity

    NASA Technical Reports Server (NTRS)

    Matthiesen, David H.; Majewski, J. A.

    1994-01-01

    An investigation into the segregation behavior of selenium doped gallium arsenide during directional solidification in the microgravity environment was conducted using the Crystal Growth Furnace (CGF) aboard the first United States Microgravity Laboratory (USML-1). The two crystals grown were 1.5 cm in diameter and 16.5 cm in length with an initial melt length of 14 cm. Two translation periods were executed, the first at 2.5 microns/s and after a specified time, which was different between the two experiments, the translation rate was doubled to 5.0 microns/s. The translation was then stopped and the remaining sample melt was solidified using a gradient freeze technique in the first sample and a rapid solidification in the second experiment. Measurement of the selenium dopant distribution, using quantitative infrared transmission imaging, indicates that the first sample initially achieved diffusion controlled growth as desired. However, after about 1 cm of growth, the segregation behavior was driven from a diffusion controlled growth regime to a complete mixing regime. Measurements in the second flight sample indicated that the growth was always in a complete mixing regime. In both experiments, voids in the center line of the crystal, indicative of bubble entrapment, were found to correlate with the position in the crystal when the translation rates were doubled.

  10. Probing the local structure of dilute Cu dopants in fluorescent ZnS nanocrystals using EXAFS.

    PubMed

    Car, Brad; Medling, Scott; Corrado, Carley; Bridges, Frank; Zhang, Jin Z

    2011-10-05

    A local structure study of ZnS nanocrystals, doped with very low concentrations of Cu, was carried out using the EXAFS technique to better understand how Cu substitutes into the host lattice and forms Cu luminescence centers. We show that a large fraction of the Cu have three nearest neighbor S atoms and the Cu-S bond is significantly shortened compared to Zn-S, by ∼0.08 Å. In addition, the second neighbor Cu-Cu peak is extremely small. We propose that Cu occupies an interior site next to a S(2-) vacancy, with the Cu displaced towards the remaining S(2-) and away from the vacancy; such a displacement immediately explains the lack of a significant Cu-Cu peak in the data. There is no evidence for interstitial Cu sites (Cu(i)), indicating that no more than 2% of the Cu are Cu(i.) This study provides new insights into the local structure of the Cu dopant in ZnS without the presence of CuS nanoprecipitates that are present at higher Cu doping levels.

  11. Probing the local structure of dilute Cu dopants in fluorescent ZnS nanocrystals using EXAFS

    NASA Astrophysics Data System (ADS)

    Car, Brad; Medling, Scott; Corrado, Carley; Bridges, Frank; Zhang, Jin Z.

    2011-10-01

    A local structure study of ZnS nanocrystals, doped with very low concentrations of Cu, was carried out using the EXAFS technique to better understand how Cu substitutes into the host lattice and forms Cu luminescence centers. We show that a large fraction of the Cu have three nearest neighbor S atoms and the Cu-S bond is significantly shortened compared to Zn-S, by ~0.08 Å. In addition, the second neighbor Cu-Cu peak is extremely small. We propose that Cu occupies an interior site next to a S2- vacancy, with the Cu displaced towards the remaining S2- and away from the vacancy; such a displacement immediately explains the lack of a significant Cu-Cu peak in the data. There is no evidence for interstitial Cu sites (Cui), indicating that no more than 2% of the Cu are Cui. This study provides new insights into the local structure of the Cu dopant in ZnS without the presence of CuS nanoprecipitates that are present at higher Cu doping levels.

  12. Sensors Locate Radio Interference

    NASA Technical Reports Server (NTRS)

    2009-01-01

    After receiving a NASA Small Business Innovation Research (SBIR) contract from Kennedy Space Center, Soneticom Inc., based in West Melbourne, Florida, created algorithms for time difference of arrival and radio interferometry, which it used in its Lynx Location System (LLS) to locate electromagnetic interference that can disrupt radio communications. Soneticom is collaborating with the Federal Aviation Administration (FAA) to install and test the LLS at its field test center in New Jersey in preparation for deploying the LLS at commercial airports. The software collects data from each sensor in order to compute the location of the interfering emitter.

  13. Electronic apex locators.

    PubMed

    Gordon, M P J; Chandler, N P

    2004-07-01

    Prior to root canal treatment at least one undistorted radiograph is required to assess canal morphology. The apical extent of instrumentation and the final root filling have a role in treatment success, and are primarily determined radiographically. Electronic apex locators reduce the number of radiographs required and assist where radiographic methods create difficulty. They may also indicate cases where the apical foramen is some distance from the radiographic apex. Other roles include the detection of root canal perforation. A review of the literature focussed first on the subject of electronic apex location. A second review used the names of apex location devices. From the combined searches, 113 pertinent articles in English were found. This paper reviews the development, action, use and types of electronic apex locators.

  14. Smart Location Mapping

    EPA Pesticide Factsheets

    The Smart Location Database, Access to Jobs and Workers via Transit, and National Walkability Index tools can help assess indicators related to the built environment, transit accessibility, and walkability.

  15. Uranium Location Database Compilation

    EPA Pesticide Factsheets

    EPA has compiled mine location information from federal, state, and Tribal agencies into a single database as part of its investigation into the potential environmental hazards of wastes from abandoned uranium mines in the western United States.

  16. Rational design of dipolar chromophore as an efficient dopant-free hole-transporting material for perovskite solar cells

    DOE PAGES

    Li, Zhong’an; Zhu, Zonglong; Chueh, Chu -Chen; ...

    2016-08-23

    In this paper, an electron donor-acceptor (D-A) substituted dipolar chromophore (BTPA-TCNE) is developed to serve as an efficient dopant-free hole-transporting material (HTM) for perovskite solar cells (PVSCs). BTPA-TCNE is synthesized via a simple reaction between a triphenylamine-based Michler’s base and tetracyanoethylene. This chromophore possesses a zwitterionic resonance structure in the ground state, as evidenced by X-ray crystallography and transient absorption spectroscopies. Moreover, BTPA-TCNE shows an antiparallel molecular packing (i.e., centrosymmetric dimers) in its crystalline state, which cancels out its overall molecular dipole moment to facilitate charge transport. Finally, BTPA-TCNE can be employed as an effective dopant-free HTM to realize anmore » efficient (PCE ≈ 17.0%) PVSC in the conventional n-i-p configuration, outperforming the control device with doped spiro-OMeTAD HTM.« less

  17. Rational design of dipolar chromophore as an efficient dopant-free hole-transporting material for perovskite solar cells

    SciTech Connect

    Li, Zhong’an; Zhu, Zonglong; Chueh, Chu -Chen; Jo, Sae Byeok; Luo, Jingdong; Jang, Sei -Hum; Jen, Alex K. -Y.

    2016-08-23

    In this paper, an electron donor-acceptor (D-A) substituted dipolar chromophore (BTPA-TCNE) is developed to serve as an efficient dopant-free hole-transporting material (HTM) for perovskite solar cells (PVSCs). BTPA-TCNE is synthesized via a simple reaction between a triphenylamine-based Michler’s base and tetracyanoethylene. This chromophore possesses a zwitterionic resonance structure in the ground state, as evidenced by X-ray crystallography and transient absorption spectroscopies. Moreover, BTPA-TCNE shows an antiparallel molecular packing (i.e., centrosymmetric dimers) in its crystalline state, which cancels out its overall molecular dipole moment to facilitate charge transport. Finally, BTPA-TCNE can be employed as an effective dopant-free HTM to realize an efficient (PCE ≈ 17.0%) PVSC in the conventional n-i-p configuration, outperforming the control device with doped spiro-OMeTAD HTM.

  18. Lunar Impact Flash Locations

    NASA Technical Reports Server (NTRS)

    Moser, D. E.; Suggs, R. M.; Kupferschmidt, L.; Feldman, J.

    2015-01-01

    A bright impact flash detected by the NASA Lunar Impact Monitoring Program in March 2013 brought into focus the importance of determining the impact flash location. A process for locating the impact flash, and presumably its associated crater, was developed using commercially available software tools. The process was successfully applied to the March 2013 impact flash and put into production on an additional 300 impact flashes. The goal today: provide a description of the geolocation technique developed.

  19. Mn2+-Doped CdSe/CdS Core/Multishell Colloidal Quantum Wells Enabling Tunable Carrier-Dopant Exchange Interactions

    NASA Astrophysics Data System (ADS)

    Delikanli, Savas; Scrace, Thomas; Murphy, Joseph; Barman, Biblop; Tsai, Yutsung; Zhang, Peiyao; Hernandez-Martinez, Pedro Ludwig; Christodoulides, Joseph; Cartwright, Alexander N.; Petrou, Athos; Demir, Hilmi Volkan

    We report the manifestations of carrier-dopant exchange interactions in colloidal Mn2+-doped CdSe/CdS core/multishell quantum wells. In our solution-processed quantum well heterostructures, Mn2+ was incorporated by growing a Cd0.985Mn0:015S monolayer shell on undoped CdSe nanoplatelets using the colloidal atomic layer deposition technique. The carrier-magnetic ion exchange interaction effects are tunable through wave function engineering. This is realized by controlling the spatial overlap between the carrier wave functions with the manganese ions through adjusting the location, composition, and number of the CdSe, Cd1-xMnxS, and CdS layers. Our colloidal quantum wells, which exhibit magneto-optical properties analogous to those of epitaxially grown quantum wells, offer new opportunities for solution-processed spin-based semiconductor devices. H.V.D. acknowledges support from EU-FP7 Nanophotonics4Energy NoE, TUBITAK, NRF-CRP-6-2010-02 and A*STAR of Singapore. Work at the University at Buffalo was supported by NSF DMR 1305770.

  20. Structural and orientation effects on electronic energy transfer between silicon quantum dots with dopants and with silver adsorbates.

    PubMed

    Vinson, N; Freitag, H; Micha, D A

    2014-06-28

    Starting from the atomic structure of silicon quantum dots (QDs), and utilizing ab initio electronic structure calculations within the Förster resonance energy transfer (FRET) treatment, a model has been developed to characterize electronic excitation energy transfer between QDs. Electronic energy transfer rates, KEET, between selected identical pairs of crystalline silicon quantum dots systems, either bare, doped with Al or P, or adsorbed with Ag and Ag3, have been calculated and analyzed to extend previous work on light absorption by QDs. The effects of their size and relative orientation on energy transfer rates for each system have also been considered. Using time-dependent density functional theory and the hybrid functional HSE06, the FRET treatment was employed to model electronic energy transfer rates within the dipole-dipole interaction approximation. Calculations with adsorbed Ag show that: (a) addition of Ag increases rates up to 100 times, (b) addition of Ag3 increases rates up to 1000 times, (c) collinear alignment of permanent dipoles increases transfer rates by an order of magnitude compared to parallel orientation, and (d) smaller QD-size increases transfer due to greater electronic orbitals overlap. Calculations with dopants show that: (a) p-type and n-type dopants enhance energy transfer up to two orders of magnitude, (b) surface-doping with P and center-doping with Al show the greatest rates, and (c) KEET is largest for collinear permanent dipoles when the dopant is on the outer surface and for parallel permanent dipoles when the dopant is inside the QD.

  1. Highly Soluble p-Terphenyl and Fluorene Derivatives as Efficient Dopants in Plastic Scintillators for Sensitive Nuclear Material Detection.

    PubMed

    Sellinger, Alan; Yemam, Henok A; Mahl, Adam; Greife, Uwe; Tinkham, Jonathan; Koubek, Joshua

    2017-04-10

    Plastic scintillators are commonly used as first-line detectors for special nuclear materials. Current state-of-the-art plastic scintillators based on poly(vinyltoluene) (PVT) matrices containing high loadings (>15.0 wt%) of 2,5-diphenyloxazole (PPO) offer neutron signal discrimination in gamma radiation background (termed pulse shape discrimination, PSD), however they suffer from poor mechanical properties. In this work, a series of p-terphenyl and fluorene derivatives were synthesized and used as dopants in PVT based plastic scintillators as possible alternatives to PPO to address the mechanical property issue and to study the PSD mechanism. The derivatives were synthesized from low cost starting materials in high yields using simple chemistry. The photophysical and thermal properties were investigated for their influence on radiation sensitivity/detection performance, and mechanical stability. A direct correlation was found between the melting point of the dopants and the subsequent mechanical properties of the PVT based plastic scintillators. Select fluorene derivatives produced scintillator samples whose mechanical properties exceeded those of the commercial PPO based scintillators while producing acceptable PSD capabilities. The physical properties of the synthesized dopants were also investigated to examine their effect on the samples. Planar derivatives of fluorene were found to be highly soluble in PVT matrices with little to no aggregation induced effects.

  2. Interdiffusion in the MgO-Al{sub 2}O{sub 3} spinel with or without some dopants

    SciTech Connect

    Zhang, P.; Seetharaman, S.; Debroy, T.

    1996-08-01

    With a view to seek an improved understanding of the DIMOX process, interdiffusion of polycrystalline MgO and Al{sub 2}O{sub 3} in the temperature range 1,473 to 1,873 K was studied by diffusion couple experiments. The interdiffusivities in the spinel layer were calculated as functions of composition and temperature. The spinel portion of the phase diagram in the system MgO-Al{sub 2}O{sub 3} was determined from carefully measured compositions at the phase boundaries, and the low temperature spinel region of the phase diagram was confirmed from the present results. For Zn{sup 2+} as dopant in alumina, the growth rate of spinel thickness seems to increase when compared with that of the diffusion couples without dopant. The samples containing Si{sup 4+} as dopant reveal the formation of a glass phase, and the effect of Si{sup 4+} on the diffusion process appears to be negligible.

  3. Grain boundary segregation of cation dopants in {alpha}-Al{sub 2}O{sub 3} scales

    SciTech Connect

    Pint, B.A.; Alexander, K.B.

    1996-12-31

    A Fe-20at.%Cr-10%Al matrix was dispersed with a wide range of different oxides in order to study the effect of oxygen-active dopants on the high-temperature growth and adhesion of {alpha}-Al{sub 2}O{sub 3} scales. Effect of these various cation dopants on the alumina scale microstructure was correlated with dopant ion segregation to the {alpha}-Al{sub 2}O{sub 3} grain boundaries using analytical electron microscopy. Elements such as Mn and V showed little effect on the oxide scale and were not observed to segregate. Elements such as Y and Gd resulted in finer, more columnar {alpha}-Al{sub 2}O{sub 3} grains and were segregated to scale grain boundaries. However, Ti, Ta, Ca, and Nb also were found to segregate but had a lesser effect on scale morphology. This indicates that cation segregation to scale grain boundaries is not a sufficient condition to achieve beneficial oxidation effects. The driving force for segregation in growing alumina scales is discussed.

  4. New cyclometalated Iridium(III) beta-dicetone complex as phosphorescent dopant in Organic light emitting devices

    NASA Astrophysics Data System (ADS)

    Ivanov, P.; Petrova, P.; Stanimirov, S.; Tomova, R.

    2017-01-01

    A new Bis[4-(benzothiazolato-N,C2‧-2-yl)-N,N-dimethylaniline]Iridium(III) acetylacetonate (Me2N-bt) 2Ir(acac) was synthesized and identified by 1H NMR and elemental analysis. The application of the new compound as a dopant in the hole transporting layer (HTL) of Organic light emitting diode (OLED) structure: HTL/EL/ETL, where HTL was N,N’-bis(3-methylphenyl)-N,N’-diphenylbenzidine (TPD), incorporated in Poly(N-vinylcarbazole) (PVK) matrix, EL - electroluminescent layer of Bis(8-hydroxy-2-methylquinoline)-(4-phenylpheno-xy)aluminum (BAlq) and ETL - electron-transporting layer of Tris-(8-hydroxyquinoline) aluminum (Alq3) or Bis[2-(2-benzothiazoly) phenolato]zinc (Zn(btz)2). We established that the electroluminescent spectra of OLEDs at different concentrations of the dopant were basically the sum of the greenish-blue emission of BAlq and yellowish-green emission of Ir complex. It was found that with increasing of the dopant concentration the relative electroluminescent intensity of Iridium complex emission increased and this of BAlq decreased and as a result the fine tuning of OLED color was observed.

  5. Highly efficient blue organic light-emitting diodes using dual emissive layers with host-dopant system

    NASA Astrophysics Data System (ADS)

    Lee, Bo Mi; Yu, Hyeong Hwa; Kim, You Hyun; Kim, Nam Ho; Yoon, Ju An; Mascher, Peter; Kim, Woo Young

    2012-10-01

    In this study, we fabricated highly efficient blue organic light-emitting diodes by designing different emitting layer structures with fluorescent host and dopant materials of 4,4-bis(2,2-diphenylyinyl)-1,10-biphenyl (DPVBi) and 9,10- bis(2-naphthyl) anthracene (ADN) as host materials and 4,4'-bis(9-ethyl-3-carbazovinylene)-1,1'biphenyl (BCzVBi) as a dopant material to demonstrate electrical and optical improvements. Best enhancement in luminance and luminous efficiency were achieved by a quantum well structure and energy transfer between host and dopant materials in device F as of 8668cd/m2 at 8V and 5.16 Cd/A at 103.20 mA/cm2 respectively. Among the blue OLED devices doped by BCzVBi, device B emits the deepest blue emission with Commission Internationale de l'É clairage (CIExy) coordinates of (0.157, 0.117) at 8V.

  6. Atomic-scale quantification of interdiffusion and dopant localization in GeSbTe-based memory devices

    NASA Astrophysics Data System (ADS)

    Chae, B.-G.; Seol, J.-B.; Song, J.-H.; Jung, W.-Y.; Hwang, H.; Park, C.-G.

    2016-09-01

    Fabrication of phase-change memory devices at modest or ambient temperatures leads to nanoscale compositional variations in phase-transition layers, where amorphous-polycrystalline phase change takes place via electrical switching, and can alter the device's performances. Here, by transmission electron microscopy and atom probe tomography, we address that thermal annealing at 400 °C for 20 min induces an elemental interdiffusion in the devices consisting of TiN (top electrode), carbon-doped GeSbTe (phase-transition layer), and TiSiN (bottom heater). With respect to the employed annealing process, the Ge atoms of GeSbTe layer have diffused into TiSiN layer at a given sample volume, while the Ti atoms of TiSiN layer into GeSbTe layer. Furthermore, non-random nature of dopant distribution in the GeSbTe materials leads to a Ti-localization including dopants at the GeSbTe/TiSiN interfaces. Our findings have two important implications: First, the annealing-driven interdiffusion of Ge and Ti is a predominant mechanism responsible for nanoscale compositional variations in GeSbTe layer; second, such an interdiffusion and the resultant dopant localization play a crucial role on the driving force for amorphous-polycrystalline transition of GeSbTe-based memory devices.

  7. Probing the effect of intrinsic defects and dopants on the structural evolution and optical properties of ZnO nanocrystallites

    SciTech Connect

    Panda, N. R.; Sahu, D.; Acharya, B. S.; Nayak, P.

    2015-06-24

    Role of intrinsic defects and external impurities in modifying the structural and optical properties of ZnO nanostructures has been studied and discussed. ZnO nanocrystallites doped with B, N and S elements have been prepared by ultrasound assisted wet chemical method. Structural evolution of ZnO in presence of dopant ions has been studied by XRD and electron microscopic measurements. Elemental analysis like XPS has been carried out to ascertain the dopant configuration. A variation in crystallographic parameters and microstructure is found to be observed as impurity is incorporated into ZnO. This has been explained on the basis of the substitution of dopant at Zn{sup 2+} and O{sup −} sites rearranging the lattice. Optical absorption measurements and PL studies reflect a change in band gap of ZnO by impurity adsorption. Most of the cases, the band gap is found to be broadened which has been explained in the line of Moss-Burstein effect. The excitonic emission in ZnO is observed to blue shift supporting the above results and the defect emissions also get modified in terms of position and intensity. New PL bands observed have been assigned to the transitions related to the defect states present in the band gap of ZnO along with intrinsic defects.

  8. Simulation and comparative study of tunneling field effect transistors with dopant-segregated Schottky source/drain

    NASA Astrophysics Data System (ADS)

    Zhang, Yi Bo; Sun, Lei; Xu, Hao; Han, Jing Wen

    2016-04-01

    Dopant-segregated Schottky source/drain tunneling field effect transistors (STFET) are investigated in this paper. The working mechanisms of STFET and the influence of device parameters are studied with Synopsys Sentaurus. Schottky source/drain MOSFETs possess several advantages over conventional MOSFETs, and dopant segregation can be feasibly achieved within current silicidation process. With dopant segregation, highly doped regions can be obtained after silicidation, which is necessary for band-to-band tunneling. With proper parameter setting, STFET can achieve comparable performance as TFET. High segregation doping for STFET is required to increase band-to-band tunneling probability and suppress bipolar behaviors. Increasing the electron barrier height at source side helps to provide larger drive current and higher on/off ratio. It is also found that STFET’s on-state performance is irrelevant to the segregation length when the segregation length is larger than a certain value. Furthermore, STFET is also insensitive to the Schottky barrier at drain side when the Schottky barrier at source side is fixed, which would relax the requirement for source/drain fabrication.

  9. Reversibility, Dopant Desorption, and Tunneling in the Temperature-Dependent Conductivity of Type-Separated, Conductive Carbon Nanotube Networks

    SciTech Connect

    Barnes, T. M.; Blackburn, J. L.; van de Lagemaat, J.; Coutts, T. J.; Heben, M. J.

    2008-09-01

    We present a comprehensive study of the effects of doping and temperature on the conductivity of single-walled carbon nanotube (SWNT) networks. We investigated nearly type-pure networks as well as networks comprising precisely tuned mixtures of metallic and semiconducting tubes. Networks were studied in their as-produced state and after treatments with nitric acid, thionyl chloride, and hydrazine to explore the effects of both intentional and adventitious doping. For intentionally and adventitiously doped networks, the sheet resistance (R{sub s}) exhibits an irreversible increase with temperature above {approx}350 K. Dopant desorption is shown to be the main cause of this increase and the observed hysteresis in the temperature-dependent resistivity. Both thermal and chemical dedoping produced networks free of hysteresis. Temperature-programmed desorption data showed that dopants are most strongly bound to the metallic tubes and that networks consisting of metallic tubes exhibit the best thermal stability. At temperatures below the dopant desorption threshold, conductivity in the networks is primarily controlled by thermally assisted tunneling through barriers at the intertube or interbundle junctions.

  10. Local structures around 3d metal dopants in topological insulator Bi2Se3 studied by EXAFS measurements

    NASA Astrophysics Data System (ADS)

    Liu, Zhen; Wei, Xinyuan; Wang, Jiajia; Pan, Hong; Ji, Fuhao; Xi, Fuchun; Zhang, Jing; Hu, Tiandou; Zhang, Shuo; Jiang, Zheng; Wen, Wen; Huang, Yuying; Ye, Mao; Yang, Zhongqin; Qiao, Shan

    2014-09-01

    Transition-metal-doped Bi2Se3 crystals, X0.05Bi2Se3 (X =Cr, Co, Ni, and Cu), are prepared and studied by powder x-ray diffraction and extended x-ray absorption fine structure (EXAFS) measurements to get the local structures around the dopants. Cr atoms substitute Bi atoms and Co atoms may substitute Bi atoms or form Co3Se4 (C2/m) clusters. Cu is also found taking the Bi substitutional site, which differs from the reported superconductor phase of Cu-doped Bi2Se3, suggesting the dependence of site occupancy of Cu in Bi2Se3 on the process of sample growing. For Ni0.05Bi2Se3, Ni atoms form Ni3Se4 (C2/m) clusters. The nearest neighbors of X (X =Cr, Co, and Cu) are Se atoms, and the X-Se bond lengths are extracted from EXAFS as 2.50 Å for Cr-Se, 2.40 Å for Co-Se, and 2.38 Å for Cu-Se, which show the direct evidences of dramatic structural relaxations around 3d dopants. The bond information of local structures around dopants is valuable for subsequent theoretical studies, and can hardly be obtained from other techniques.

  11. Measurement of 3-dimensional dopant distribution in InGaAs microdiscs grown selectively on Si (111)

    NASA Astrophysics Data System (ADS)

    Watanabe, Tohma; Takeuchi, Miyuki; Nakano, Yoshiaki; Sugiyama, Masakazu

    2017-04-01

    The control of the dopant profile in 3-dimentional InGaAs microdiscs on Si (111) is essential for their device applications. However, such profiles can never be controlled by simply changing the supply of dopant precursors during the growth of microdiscs. This is because a variety of crystal planes, such as (111), {-110}, and irregular planes near the corners, surround a hexagonal pillar of InGaAs and the incorporation efficiency of dopant elements depends significantly on the kind of planes involved. We here observed the distributions of sulfur and zinc in p-i-n InGaAs microdiscs by both cross-sectional scanning capacitance microscopy (SCM) and secondary-ion mass spectrometry using focused ion beam (NanoSIMS). Even though the InGaAs shell was grown on the microdiscs using dimethylzinc (DMZn), no p-type region was found on the top of the microdiscs and the p-type region existed on the sidewall of the discs alone. This result suggested that the zinc incorporation efficiency on InGaAs (111) plane is much lower than that on {-110} planes. Complete encapsulation of the microdiscs with p-type region was possible by the post-diffusion of zinc during exposure to a mixture of tertiarybutylarsine (TBAs) and DMZn after the growth of InGaAs microdiscs.

  12. The big red shift of photoluminescence of Mn dopants in strained CdS: a case study of Mn-doped MnS-CdS heteronanostructures.

    PubMed

    Zuo, Taisen; Sun, Zhipeng; Zhao, Yuliang; Jiang, Xiaoming; Gao, Xueyun

    2010-05-19

    The red photoluminescence of Mn dopants in MnS-CdS heteronanostructures has been observed for the first time. The red photoluminescence at 650 nm derives from emission due to the (4)T(1) --> (6)A(1) transition of Mn(2+) dopants in a CdS matrix exposed to gigapascal-level lattice stress. HRTEM, FFT, XRD, and optical studies revealed that the lattice of Mn-doped CdS is compressed to match that of MnS when CdS crystallizes at the MnS surface to form MnS-CdS heteronanostructures. The photoluminescence decay times of such Mn dopants are on the order of nanoseconds because of the spin-flip interactions between Mn dopants and free carriers in the CdS matrix.

  13. Electronic and Magnetic Properties of Encapsulated MoS2 Quantum Dots: The Case of Noble Metal Nanoparticle Dopants.

    PubMed

    Loh, Guan Chee

    2016-04-18

    With the rise of 2D materials, such as graphene and transition metal dichalcogenides, as viable materials for numerous experimental applications, it becomes more necessary to maintain fine control of their properties. One expedient and efficacious technique to regulate their properties is surface functionalization. In this study, DFT calculations are performed on triangular MoS2 quantum dots (QDs) either partially or completely doped with nanoparticles (NPs) of the noble metals Au, Ag, and Pt. The effects of these dopants on the geometry, electronic properties, magnetic properties, and chemical bonding of the QDs are investigated. The calculations show that the structural stability of the QDs is reduced by Au or Ag dopants, whereas Pt dopants have a contrasting effect. The NPs diminish the metallicity of the QD, the extent of which is contingent on the number of NPs adsorbed on the QD. However, these NPs exert distinctly disparate charge transfer effects-Ag NPs n-dope the QDs, whereas Au and Pt NPs either n- or p-dope. The molecular electrostatic potential maps of the occupied states show that metallic states are removed from the doping sites. Notwithstanding the decrease of magnetization in all three types of hybrid QD, the distribution of spin density in the Pt-doped QD is inherently different from that in the other QDs. Bond analyses using the quantum theory of atoms in molecules and the crystal orbital Hamilton population suggest that bonds between the Pt NPs and the QDs are the most covalent and the strongest, followed by the Au-QD bonds, and then Ag-QD bonds. The versatility of these hybrid QDs is further examined by applying an external electric field in the three orthogonal orientations, and comparing their properties with those in the absence of the electric field. There are two primary observations: 1) dopants at the tail, head and tail, and in the fully encased configuration are most effective in modifying the distribution of metallic states if the

  14. Hydrogen Storage Properties of Lithium Aluminohydride Modified by Dopants and Mechanochemistry

    SciTech Connect

    Hosokawa, Keita

    2002-01-01

    Alkali metal aluminohydrides have high potential as solid hydrogen storage materials. They have been known for their irreversible dehydrogenation process below 100 atm until Bogdanovic et al [1, 2] succeeded in the re-hydrogenation of NaAlH4 below 70 atm. They achieved 4 wt.% H2 reversible capacity by doping NaAlH4 with Ti and/or Fe organo-metalic compounds as catalysts. This suggests that other alkali and, possibly alkaline earth metal aluminohydrides can be used for reversible hydrogen storage when modified by proper dopants. In this research, Zr27Ti9Ni38V5Mn16Cr5, LaNi4.85Sn0.15, Al3Ti, and PdCl2 were combined , LaNi4.85Sn0.15, Al3Ti, and PdCl2 were combined with LiAlH4 by ball-milling to study whether or not LiAlH4 is capable to both absorb and desorb hydrogen near ambient conditions. X-ray powder diffraction, differential thermal analysis, and scanning electron microscopy were employed for sample characterizations. All four compounds worked as catalysts in the dehydrogenation reactions of both LiAlH4 and Li3AlH6 by inducing the decomposition at lower temperature. However, none of them was applicable as catalyst in the reverse hydrogenation reaction at low to moderate hydrogen pressure.

  15. Hydrogen Storage Properties of Lithium Aluminohydride modified by dopants and mechanochemistry

    SciTech Connect

    Hosokawa, Keita

    2002-01-01

    Alkali metal aluminohydrides have high potential as solid hydrogen storage materials. They have been known for their irreversible dehydrogenation process below 100 atm until Bogdanovic et al [1, 2] succeeded in the re-hydrogenation of NaAlH4 below 70 atm. They achieved 4 wt.% H2 reversible capacity by doping NaAlH4 with Ti and/or Fe organo-metalic compounds as catalysts. This suggests that other alkali and, possibly alkaline earth metal aluminohydrides can be used for reversible hydrogen storage when modified by proper dopants. In this research, Zr27Ti9Ni38V5Mn16Cr5, LaNi4.85Sn0.15, Al3Ti, and PdCl2 were combined with LiAlH4 by ball-milling to study whether or not LiAlH4 is capable to both absorb and desorb hydrogen near ambient conditions. X-ray powder diffraction, differential thermal analysis, and scanning electron microscopy were employed for sample characterizations. All four compounds worked as catalysts in the dehydrogenation reactions of both LiAlH4 and Li3AlH6 by inducing the decomposition at lower temperature. However, none of them was applicable as catalyst in the reverse hydrogenation reaction at low to moderate hydrogen pressure.

  16. Hydrogen Storage Properties of Lithium Aluminohydride Modified by Dopants and Mechanochemistry

    SciTech Connect

    Hosokawa, Ketia

    2002-01-01

    Alkali metal aluminohydrides have high potential as solid hydrogen storage materials. They have been known for their irreversible dehydrogenation process below 100 atm until Bogdanovic et al succeeded in the re-hydrogenation of NaAlH4 below 70 atm. They achieved 4 wt.% H2 reversible capacity by doping NaAlH4 with Ti and/or Fe organo-metallic compounds as catalysts. This suggests that other alkali and, possibly alkaline earth metal aluminohydrides can be used for reversible hydrogen storage when modified by proper dopants. In this research, Zr27Ti9Ni38V5Mn16Cr5, LaNi 4.85Sn0.15, Al3Ti, and PdCl2 were combined with LiAlH4 by ball-milling to study whether or not LiAlH4 is capable to both absorb and desorb hydrogen near ambient conditions. X-ray powder diffraction, differential thermal analysis, and scanning electron microscopy were employed for sample characterizations. All four compounds worked as catalysts in the dehydrogenation reactions of both LiAlH4 and Li3AlH6 by inducing the decomposition at lower temperature. However, none of them was applicable as catalyst in the reverse hydrogenation reaction at low to moderate hydrogen pressure.

  17. RFI emitter location techniques

    NASA Technical Reports Server (NTRS)

    Rao, B. L. J.

    1973-01-01

    The possibility is discussed of using Doppler techniques for determining the location of ground based emitters causing radio frequency interference with low orbiting satellites. An error analysis indicates that it is possible to find the emitter location within an error range of 2 n.mi. The parameters which determine the required satellite receiver characteristic are discussed briefly along with the non-real time signal processing which may by used in obtaining the Doppler curve. Finally, the required characteristics of the satellite antenna are analyzed.

  18. Marine cable location system

    SciTech Connect

    Zachariadis, R.G.

    1984-05-01

    An acoustic positioning system locates a marine cable at an exploration site, such cable employing a plurality of hydrophones at spaced-apart positions along the cable. A marine vessel measures water depth to the cable as the vessel passes over the cable and interrogates the hydrophones with sonar pulses along a slant range as the vessel travels in a parallel and horizontally offset path to the cable. The location of the hydrophones is determined from the recordings of water depth and slant range.

  19. Using Pt Dopant and Sol Gel Technology for Sensitivity Enhancement of TiO2/SnO2Humidity Sensors.

    PubMed

    Chang, Wen-Yang; Ke, Wen-Wang; Hsieh, Yu-Sheng; Kuo, Nai-Hao; Lin, Yu-Cheng

    2005-01-01

    The sensitivity of the humidity sensor based on hybrid thin films of nanostructure TiO2/SnO2with Pt dopant was successfully increased. The humidity-sensitive materials, TiO2/SnO3, were prepared by sol gel technology. The microstructure of the sensing film after calcination was investigated by the Field Emission gun Scanning Electron Microscopy (FESEM) and revealed that the metal oxide hybrid had about 10 nm grain size. For studying the effect of Pt dopant on the humidity-sensitive responses, 1 ml to 10 ml of Pt standard solution was added into the colloidal solution. To compare the humidity sensor of Pt dopant with that of no Pt dopant, operational frequencies and electrode spacing were set under the relative humidity from 30 % to 95 % at the ambient temperature of 22 °C. We demonstrated that adding Pt dopant remarkably enhanced the sensitivity of TiO2/SnO2humidity sensor, and further decreased the TiO2/SnO2 resistance, which was 3.3 times lower than that without Pt dopant at the high humidity.

  20. Tuning near-gap electronic structure, interface charge transfer and visible light response of hybrid doped graphene and Ag3PO4 composite: Dopant effects

    PubMed Central

    He, Chao-Ni; Huang, Wei-Qing; Xu, Liang; Yang, Yin-Cai; Zhou, Bing-Xin; Huang, Gui-Fang; Peng, P.; Liu, Wu-Ming

    2016-01-01

    The enhanced photocatalytic performance of doped graphene (GR)/semiconductor nanocomposites have recently been widely observed, but an understanding of the underlying mechanisms behind it is still out of reach. As a model system to study the dopant effects, we investigate the electronic structures and optical properties of doped GR/Ag3PO4 nanocomposites using the first-principles calculations, demonstrating that the band gap, near-gap electronic structure and interface charge transfer of the doped GR/Ag3PO4(100) composite can be tuned by the dopants. Interestingly, the doping atom and C atoms bonded to dopant become active sites for photocatalysis because they are positively or negatively charged due to the charge redistribution caused by interaction. The dopants can enhance the visible light absorption and photoinduced electron transfer. We propose that the N atom may be one of the most appropriate dopants for the GR/Ag3PO4 photocatalyst. This work can rationalize the available experimental results about N-doped GR-semiconductor composites, and enriches our understanding on the dopant effects in the doped GR-based composites for developing high-performance photocatalysts. PMID:26923338

  1. Uranium Location Database

    EPA Pesticide Factsheets

    A GIS compiled locational database in Microsoft Access of ~15,000 mines with uranium occurrence or production, primarily in the western United States. The metadata was cooperatively compiled from Federal and State agency data sets and enables the user to conduct geographic and analytical studies on mine impacts on the public and environment.

  2. Optimal Facility-Location.

    PubMed

    Goldman, A J

    2006-01-01

    Dr. Christoph Witzgall, the honoree of this Symposium, can count among his many contributions to applied mathematics and mathematical operations research a body of widely-recognized work on the optimal location of facilities. The present paper offers to non-specialists a sketch of that field and its evolution, with emphasis on areas most closely related to Witzgall's research at NBS/NIST.

  3. Particle impact location detector

    NASA Technical Reports Server (NTRS)

    Auer, S. O.

    1974-01-01

    Detector includes delay lines connected to each detector surface strip. When several particles strike different strips simultaneously, pulses generated by each strip are time delayed by certain intervals. Delay time for each strip is known. By observing time delay in pulse, it is possible to locate strip that is struck by particle.

  4. LOCATING AREAS OF CONCERN

    EPA Science Inventory

    A simple method to locate changes in vegetation cover, which can be used to identify areas under stress. The method only requires inexpensive NDVI data. The use of remotely sensed data is far more cost-effective than field studies and can be performed more quickly. Local knowledg...

  5. Locating gravitational potential energy

    NASA Astrophysics Data System (ADS)

    Keeports, David

    2017-01-01

    Where does gravitational potential energy reside when a ball is in the air? The perfectly correct answer is that it is located in the ball-Earth system. Still, mechanical energy conservation problems are routinely solved by assigning a potential energy to the ball alone. Provided here is a proof that such an assignment introduces only an entirely undetectable error.

  6. VA Health Care Facilities Locator

    MedlinePlus

    ... VA » Locations » Find Locations Locations Find Locations The javascript used here is for validation purpose only. Your browser doesn't seem to support javascript or has it disabled. This site is a ...

  7. Aquatic Nuisance Species Locator

    EPA Pesticide Factsheets

    Data in this map has been collected by the United States Geological Survey's Nonindigenous Aquatic Species program located in Gainesville, Florida (http://nas.er.usgs.gov/default.aspx). This dataset may have some inaccuracies and is only current to June 15, 2012. The species identified in this dataset are not inclusive of all aquatic nuisance species, but rather a subset identified to be at risk for transport by recreational activities such as boating and angling. Additionally, the locations where organisims have been identified are also not inclusive and should be treated as a guide. Organisms are limited to the following: American bullfrog, Asian clam, Asian shore crab, Asian tunicate, Australian spotted jellyfish, Chinese mitten crab, New Zealand mudsnail, Colonial sea squirt, Alewife, Bighead carp, Black carp, Flathead catfish, Grass carp, Green crab, Lionfish, Northern snakehead, Quagga mussel, Round Goby, Ruffe, Rusty crayfish, Sea lamprey, Silver carp, Spiny water flea, Veined rapa whelk, Zebra mussel

  8. Underwater hydrophone location survey

    NASA Technical Reports Server (NTRS)

    Cecil, Jack B.

    1993-01-01

    The Atlantic Undersea Test and Evaluation Center (AUTEC) is a U.S. Navy test range located on Andros Island, Bahamas, and a Division of the Naval Undersea Warfare Center (NUWC), Newport, RI. The Headquarters of AUTEC is located at a facility in West Palm Beach, FL. AUTEC's primary mission is to provide the U.S. Navy with a deep-water test and evaluation facility for making underwater acoustic measurements, testing and calibrating sonars, and providing accurate underwater, surface, and in-air tracking data on surface ships, submarines, aircraft, and weapon systems. Many of these programs are in support of Antisubmarine Warfare (ASW), undersea research and development programs, and Fleet assessment and operational readiness trials. Most tests conducted at AUTEC require precise underwater tracking (plus or minus 3 yards) of multiple acoustic signals emitted with the correct waveshape and repetition criteria from either a surface craft or underwater vehicle.

  9. Electric current locator

    DOEpatents

    King, Paul E [Corvallis, OR; Woodside, Charles Rigel [Corvallis, OR

    2012-02-07

    The disclosure herein provides an apparatus for location of a quantity of current vectors in an electrical device, where the current vector has a known direction and a known relative magnitude to an input current supplied to the electrical device. Mathematical constants used in Biot-Savart superposition equations are determined for the electrical device, the orientation of the apparatus, and relative magnitude of the current vector and the input current, and the apparatus utilizes magnetic field sensors oriented to a sensing plane to provide current vector location based on the solution of the Biot-Savart superposition equations. Description of required orientations between the apparatus and the electrical device are disclosed and various methods of determining the mathematical constants are presented.

  10. Coso MT Site Locations

    DOE Data Explorer

    Doug Blankenship

    2011-05-04

    This data includes the locations of the MT data collected in and around the Coso Geothermal field that covered the West Flank area. These are the data that the 3D MT models were created from that were discussed in Phase 1 of the West Flank FORGE project. The projected coordinate system is NAD 1927 State Plane California IV FIPS 0404 and the Projection is Lambert Conformal Conic. Units are in feet.

  11. Magnetic Location Indicator

    NASA Technical Reports Server (NTRS)

    Stegman, Thomas W.

    1992-01-01

    Ferrofluidic device indicates point of highest magnetic-flux density in workspace. Consists of bubble of ferrofluid in immiscible liquid carrier in clear plastic case. Used in flat block or tube. Axes of centering circle on flat-block version used to mark location of maximum flux density when bubble in circle. Device used to find point on wall corresponding to known point on opposite side of wall.

  12. Ammonia Leak Locator Study

    NASA Technical Reports Server (NTRS)

    Dodge, Franklin T.; Wuest, Martin P.; Deffenbaugh, Danny M.

    1995-01-01

    The thermal control system of International Space Station Alpha will use liquid ammonia as the heat exchange fluid. It is expected that small leaks (of the order perhaps of one pound of ammonia per day) may develop in the lines transporting the ammonia to the various facilities as well as in the heat exchange equipment. Such leaks must be detected and located before the supply of ammonia becomes critically low. For that reason, NASA-JSC has a program underway to evaluate instruments that can detect and locate ultra-small concentrations of ammonia in a high vacuum environment. To be useful, the instrument must be portable and small enough that an astronaut can easily handle it during extravehicular activity. An additional complication in the design of the instrument is that the environment immediately surrounding ISSA will contain small concentrations of many other gases from venting of onboard experiments as well as from other kinds of leaks. These other vapors include water, cabin air, CO2, CO, argon, N2, and ethylene glycol. Altogether, this local environment might have a pressure of the order of 10(exp -7) to 10(exp -6) torr. Southwest Research Institute (SwRI) was contracted by NASA-JSC to provide support to NASA-JSC and its prime contractors in evaluating ammonia-location instruments and to make a preliminary trade study of the advantages and limitations of potential instruments. The present effort builds upon an earlier SwRI study to evaluate ammonia leak detection instruments [Jolly and Deffenbaugh]. The objectives of the present effort include: (1) Estimate the characteristics of representative ammonia leaks; (2) Evaluate the baseline instrument in the light of the estimated ammonia leak characteristics; (3) Propose alternative instrument concepts; and (4) Conduct a trade study of the proposed alternative concepts and recommend promising instruments. The baseline leak-location instrument selected by NASA-JSC was an ion gauge.

  13. Separatrix location in NSTX

    NASA Astrophysics Data System (ADS)

    Kelly, Frederick; Maingi, Rajesh; Maqueda, Ricky; Menard, Jon; Leblanc, Ben; Bell, Ron; Paul, Stephen

    2008-11-01

    The separatrix location and corresponding plasma parameters in NSTX were estimated for H-mode discharge 117125 containing both MARFEs and ELMs and for Type V ELMy H-mode discharge 128337. Since equilibrium reconstructions with LRDFIT did not accurately locate the LFS separatrix, a method based on the strong electron parallel heat conductivity was used to map the LFS magnetic flux surfaces to the HFS since the innermost Thomson scattering measurement of Te(R) is the most accurate. During a MARFE or at MARFE onset in NSTX shot 117125, this method estimated the electron temperature at the LFS separatrix, Te,sep, to vary between 31 and 41 eV. At times with no MARFE or ELM, Te,sep ranged between 41 and 93 eV. These Te,sep values compare well with Te,sep values (28-35 eV) in TEXTOR just before MARFE onset.^1 In NSTX shot 128337 late in the Type V ELMy phase, Te,sep was estimated to be ˜100 eV. These separatrix locations place the Er well outside the separatrix. [1] F.A. Kelly, W.M. Stacey, J. Rapp and M. Brix, Phys. Plasmas 8 (2001) 3382.

  14. Locating the stranger rapist.

    PubMed

    Davies, A; Dale, A

    1996-04-01

    As part of a larger project evaluating aspects of offender profiling, an initial study was undertaken of the geographic aspects of approximately 300 sexual offences carried out by 79 stranger rapists. The objective was to focus further research on the topic into potentially useful channels, but information thought to be of immediate use to investigating officers was also produced. It was ascertained that at least one-fifth of the sample of stranger rapists were itinerant to a greater or lesser extent. Analysis of the cases where both the offender's address and the location where he approached the victim were known, indicated that the majority of attacks (75 per cent) were initiated within five miles of the offenders' homes. The apparent reasons for victims being approached unusually far away included targeting of locations where numbers of suitable victims were available; raping during relatively sophisticated property offences; 'prowling' or 'hunting' over large areas by subjects who spent considerable amounts of time so doing; access to transport; and familiarity with widely dispersed neighbourhoods, often due to the offender having lived in two or more locations. As a result of this work, future research on the geography of rape will be directed towards those aspects of the offences which have been identified as relevant to the distance between an offender's base and the site where he approached his victim.

  15. Effect of rare earth dopants on the magnetic ordering of frustrated h-YMnO3

    NASA Astrophysics Data System (ADS)

    Sharma, Neetika; Das, A.; Prajapat, C. L.; Singh, M. R.

    2016-12-01

    In this report the combined effects of chemical pressure and R-Mn interaction on the structural and magnetic properties of frustrated h-YMnO3 have been investigated. Towards this, neutron powder diffraction and magnetization measurements were carried out on isostructural compounds Y1-xRxMnO3(R=Yb, Er, Tb, Ho; x≤0.2) with hexagonal structure (P63cm space group). The dopants are evenly distributed between the two Yttrium sites. The unit cell volume shows a linear increase with average A-site ionic radii, . The average apical a and planar p bond lengths are found to increase with . The tilting angle of the MnO5 polyhedron decreases linearly with increase in , whereas the buckling angle remains constant. No significant change in TN (within 10 K) is observed on doping. The temperature variation of the volume indicates an anomalous reduction in volume at TN which is found to be correlated with the square of the antiferromagnetic Mn moment. A spin reorientation behavior (evident from a change in the irreducible representation (IR) Γ3 to Γ4) is observed on decreasing from 1.019 Å (Y) to 1.012 Å (Yb) similar to that reported in external pressure studies on YMnO3. Additional interaction between the doped R and Mn influences the magnetic structure in the case of Ho and Tb doped samples. With Ho doping at Y site, the magnetic structure is described by IR Γ3 alone for 5 K≤T<35 K and a mixture of Γ3 and Γ4 for T≥35 K. However, in Tb doped sample, the magnetic structure is better described by Γ4Tb,Mn IR with additional moment on Tb. The frustration parameter, f reduces from 6 to 1 in the doped samples. A combination of chemical pressure effect and magnetic coupling between the magnetic R ion and Mn moments thus describes the magnetic structures and relieves the frustration effects inherent to the quasi-two dimensional Mn moment ordering.

  16. Lattice location of phosphorus in n-type homoepitaxial diamond films grown by chemical-vapor deposition

    NASA Astrophysics Data System (ADS)

    Hasegawa, Masataka; Teraji, Tokuyuki; Koizumi, Satoshi

    2001-11-01

    The lattice location of phosphorus dopant atoms in n-type homoepitaxial diamond {111} films grown by chemical-vapor deposition has been investigated by Rutherford backscattering spectrometry and particle-induced x-ray emission under ion-channeling conditions. It is found that phosphorus dopant atoms occupy the substitutional sites almost completely in the host diamond lattice. The substitutional fraction of phosphorus was more than 0.9 for <011> and <111> directions. Present observation implies that the deep ground-state energy level of phosphorus in diamond, which is at 0.6 eV below the bottom of the conduction band, is attributed to the relaxation of surrounding carbon atoms.

  17. Hydrogen adsorption and storage on palladium-decorated graphene with boron dopants and vacancy defects: A first-principles study

    NASA Astrophysics Data System (ADS)

    Ma, Ling; Zhang, Jian-Min; Xu, Ke-Wei; Ji, Vincent

    2015-02-01

    The geometric stability and hydrogen capacity of Pd-decorated graphene with experimentally realizable boron dopants and various vacancy defects including single carbon vacancy (SV), "585"-type double carbon vacancy (585 DCV) and "555-777"-type double carbon vacancy (555-777 DCV) are investigated using the first-principles calculations based on density functional theory (DFT). It is found that among the four types of defective structures, Pd‧s binding energies on SV and 585 DCV defect graphene sheets exceed the cohesive energy of the Pd metal bulk, thus Pd atoms are well dispersed above defective graphene sheets and effectively prevent Pd clustering. Up to three H2 molecules can bind to Pd atom on graphene with B dopants, SV and 555-777 DCV defects. For the cases of Pd-decorated graphene with B dopants and 555-777 DCV defect, a single H2 or two H2 are molecularly chemisorbed to Pd atom in the form of Pd-H2 Kubas complex, where the stretched H-H bond is relaxed but not dissociated. Out of two adsorbed H2, the third H2 binds to Pd atom by small van der Waals (vdW) forces and the nature of bonding is very weak physisorption. Different from above two cases, three H2 are all molecularly chemisorbed to Pd atom with stretched H-H bond for Pd-decorated SV defect graphene, the hybridization of the Pd-4d orbitals with the H2-σ orbitals and the electrostatic interaction between the Pd cation and the induced H2 dipole both contribute to the H2 molecules binding, and the binding energies of 0.25-0.41 eV/H2 is in the range that can permit H2 molecules recycling at ambient conditions.

  18. First Principles and Multi-Scale Modeling of the Roles of Impurities and Dopants on Thermal Barrier Coating Failure

    DTIC Science & Technology

    2007-03-31

    coat alloy or the superalloy . We then report characterization of impurities (S) and dopants (Hf and Pt) known to be present at the surface of the NiAl...a nonstoichiometric NiAl alloy containing either -5 at% Pt in the platinum aluminide bond coats or Cr and Y in the NiCrAlY bond coat family, with...from the manufacture of the Ni superalloy jet engine components. It is thought that S segregates to the bond coat alloy/TGO interface. Thus all three

  19. Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor

    SciTech Connect

    Wang, Hao; Han, Weihua Li, Xiaoming; Zhang, Yanbo; Yang, Fuhua

    2014-09-28

    We demonstrate temperature-dependent quantum transport characteristics in silicon junctionless nanowire transistor fabricated on Silicon-on-Insulator substrate by the femtosecond laser lithography. Clear drain-current oscillations originated from dopant-induced quantum dots are observed in the initial stage of the conduction for the silicon nanowire channel at low temperatures. Arrhenius plot of the conductance indicates the transition temperature of 30 K from variable-range hopping to nearest-neighbor hopping, which can be well explained under Mott formalism. The transition of electron hopping behavior is the interplay result between the thermal activation and the Coulomb interaction.

  20. Sonar Locator Systems

    NASA Technical Reports Server (NTRS)

    1985-01-01

    An underwater locator device called a Pinger is attached to an airplane's flight recorder for recovery in case of a crash. Burnett Electronics Pinger Model 512 resulted from a Burnett Electronics Laboratory, Inc./Langley Research Center contract for development of a search system for underwater mines. The Pinger's battery-powered transmitter is activated when immersed in water, and sends multidirectional signals for up to 500 hours. When a surface receiver picks up the signal, a diver can retrieve the pinger and the attached airplane flight recorder. Other pingers are used to track whales, mark underwater discoveries and assist oil drilling vessels.

  1. Location of Planet X

    SciTech Connect

    Harrington, R.S.

    1988-10-01

    Observed positions of Uranus and Neptune along with residuals in right ascension and declination are used to constrain the location of a postulated tenth planet. The residuals are converted into residuals in ecliptic longitude and latitude. The results are then combined into seasonal normal points, producing average geocentric residuals spaced slightly more than a year apart that are assumed to represent the equivalent heliocentric average residuals for the observed oppositions. Such a planet is found to most likely reside in the region of Scorpius, with considerably less likelihood that it is in Taurus. 8 references.

  2. METHOD OF LOCATING GROUNDS

    DOEpatents

    Macleish, K.G.

    1958-02-11

    ABS>This patent presents a method for locating a ground in a d-c circult having a number of parallel branches connected across a d-c source or generator. The complete method comprises the steps of locating the ground with reference to the mildpoint of the parallel branches by connecting a potentiometer across the terminals of the circuit and connecting the slider of the potentiometer to ground through a current indicating instrument, adjusting the slider to right or left of the mildpoint so as to cause the instrument to indicate zero, connecting the terminal of the network which is farthest from the ground as thus indicated by the potentiometer to ground through a condenser, impressing a ripple voltage on the circuit, and then measuring the ripple voltage at the midpoint of each parallel branch to find the branch in which is the lowest value of ripple voltage, and then measuring the distribution of the ripple voltage along this branch to determine the point at which the ripple voltage drops off to zero or substantially zero due to the existence of a ground. The invention has particular application where a circuit ground is present which will disappear if the normal circuit voltage is removed.

  3. Evaluation of CO2 and CO dopants in hydrogen to reduce hydrogen permeation in the Stirling engine heater head tube alloy CG-27

    NASA Technical Reports Server (NTRS)

    Misencik, J. A.

    1983-01-01

    Tubes of CG-27 alloy, filled with hydrogen doped with various amounts of carbon dioxide and carbon monoxide, were heated in a diesel fuel fired Stirling engine simulator materials test rig for 100 hours at 820 C and at a gas pressure of 15 MPa to determine the effectiveness of the dopants in reducing hydrogen permeation through the hot tube wall. This was done for clean as-heat treated tubes and also for tubes that had previously been exposed for 100 hours to hydrogen doped with 1.0 volume percent carbon dioxide to determine if the lower levels of dopant could maintain a low hydrogen permeation through the hot tube wall. Carbon dioxide, as a dopant in hydrogen, was most effective in reducing hydrogen permeation through clean tubes and in maintaining low hydrogen permeation after prior exposure to 1.0 volume percent carbon dioxide. Only the lowest level of carbon dioxide (0.05 volume percent) was not as effective in the clean or prior exposed tubes. Carbon monoxide as a dopant in hydrogen was less effective than carbon dioxide at a given concentration level. Of the four dopant levels studied; 1.0, 0.5, 0.2, and 0.05 volume percent carbon monoxide, only the 1.0 and 0.5 volume percent were effective in reducing and maintaining low hydrogen permeation through the CG-27.

  4. Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Patra, Saroj Kumar; Tran, Thanh-Nam; Vines, Lasse; Kolevatov, Ilia; Monakhov, Edouard; Fimland, Bjørn-Ove

    2017-04-01

    Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al0.9Ga0.1As0.06Sb0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature Hall effect measurements, and dopant densities from secondary ion mass spectrometry depth profiling. An undoped Al0.3Ga0.7As cap layer and side wall passivation were used to reduce oxidation and improve accuracy in Hall effect measurements. The measurements on Be-doped samples revealed high doping efficiency and the carrier concentration varied linearly with dopant density up to the highest Be dopant density of 2.9 × 1019 cm-3, whereas for Te doped samples the doping efficiency was in general low and the carrier concentration saturated for Te-dopant densities above 8.0 × 1018 cm-3. The low doping efficiency in Te-doped Al0.9Ga0.1As0.06Sb0.94 layer was studied by deep-level transient spectroscopy, revealing existence of deep trap levels and related DX-centers which explains the low doping efficiency.

  5. Sensitivity of CoSi{sub 2} precipitation in silicon to extra-low dopant concentrations. I. Experiment

    SciTech Connect

    Fortuna, F.; Ruault, M.-O.; Kaïtasov, O.; Borodin, V. A.; Ganchenkova, M. G.

    2015-01-28

    We demonstrate that the precipitation of cobalt disilicide phase in silicon during high-temperature (500 °C and 650 °C) implantation is noticeably affected by impurities of phosphorus and boron. Measurements of B-type CoSi{sub 2} cluster sizes and number densities as a function of implantation dose indicate that the number density of clusters progressively increases as the phosphorus concentration increases from 7 × 10{sup 11} to 8 × 10{sup 13 }cm{sup −3}. A tentative explanation of these observations is proposed based on the previously suggested mechanism of precipitate nucleation, and on the results of first principles calculations summarized in Paper II, published as a follow-up paper. The results imply that utmost care is to be taken when dealing with transition metal precipitation during ion implantation into silicon because variations in the dopant content can affect the reproducibility of results even at extremely low dopant concentrations.

  6. EXAFS study of dopant ions with different charges in nanocrystalline anatase: evidence for space-charge segregation of acceptor ions.

    PubMed

    Knauth, Philippe; Chadwick, Alan V; Lippens, Pierre E; Auer, Gerhard

    2009-06-02

    Nanocrystalline TiO(2) (anatase) is an essential oxide for environment and energy applications. A combination of EXAFS spectroscopy and DFT calculations on a series of dopants with quite similar ion radius, but increasing ion charge, show boundary space charge segregation of acceptor cations. The picture illustrates the Fourier-transformed EXAFS spectrum for Sn(4+)-doped TiO(2).A series of dopants, including acceptor ions (Zn(2+), Y(3+)), isovalent ions (Zr(4+), Sn(4+)) as well as a donor ion (Nb(5+)), were studied by EXAFS spectroscopy in nanocrystalline TiO(2) anatase powders and nanoceramics. Similar results were found for nanocrystalline powders and nanocrystalline ceramics, made by hot-pressing the powders. Boundary segregation was observed for the acceptor ions yttrium and zinc, whereas tin, zirconium and niobium ions were placed on substitutional bulk sites and did not segregate, whatever their concentration. These results can be interpreted based on defect thermodynamics, in the framework of a space charge segregation model with positive boundary core, due to excess oxide ion vacancies, and negative space charge regions, where ionized acceptors are segregated.

  7. Determination of Raman Spectrum of Li28La12Zr8O48 as a Function of Dopant

    NASA Astrophysics Data System (ADS)

    Mukhopadhyay, Saikat; Thompson, Travis; Sakamoto, Jeff; Johannes, Michelle; Stewart, Derek

    2014-03-01

    Li28La12Zr8O48 is a supervalent conductor with a low conductivity tetragonal phase and a high conductivity cubic phase, making it a strong candidate as a practical Li ion rechargeable battery solid electrolyte. The high conductivity phase can be stabilized via supervalent doping that drives Li+ ions out of the lattice, creating vacancies that both relieve the necessity for Li sublattice ordering and provide easier pathways for ionic conduction. The conductivity strongly depends on both doping concentration and site preference. Ta5+ has been suggested as an optimal dopant as it likely substitutes for Zr4+, thereby leaving the Li sublattice undisturbed. However, it is difficult to accurately establish the actual, as compared to nominal, amount of Ta doped into the lattice which, in turn, determines the vacancy concentration and conductivity. In this talk, we will present the variation of Raman intensities of LLZO as a function of Ta concentration to determine the role of dopant and vacancies in deciding measured Raman intensities via first principles calculations based on Density Functional Theory. A direct comparison of calculated and measured Raman spectrum may provide a definitive measure of vacancy concentration.

  8. Dopant concentration dependent optical and X-Ray induced photoluminescence in Eu3+ doped La2Zr2O7

    NASA Astrophysics Data System (ADS)

    Pokhrel, Madhab; Brik, Mikhail; Mao, Yuanbing

    2015-03-01

    Herein, we will be presenting the dopant (Eu) concentration dependent high density La2Zr2O7 nanoparticles for optical and X-ray scintillation applications by use of X - ray diffraction, Raman, FTIR, scanning electron microscope (SEM), transmission electron microscopy (TEM), optically and X-ray excited photoluminescence (PL). Several theoretical methods have been used in order to investigate the structural, electronic, optical, elastic, dynamic properties of Eu doped La2Zr2O7. It is observed that Eu: La2Zr2O7 shows an intense red luminescence under 258, 322, 394 and 465 nm excitation. The optical intensity of Eu: La2Zr2O7 depends on the dopant concentration of Eu3+. Following high energy excitation with X-rays, Eu: La2Zr2O7 shows an atypical Eu PL response (scintillation) with a red emission. The intense color emission of Eu obtained under 258 nm excitation, the X-ray induced luminescence property along with reportedly high density of La2Zr2O7, makes these nanomaterials attractive for optical and X-ray applications. The authors thank the support from the Defense Threat Reduction Agency (DTRA) of the U.S. Department of Defense (Award #HDTRA1-10-1-0114).

  9. Influences of various Pt dopants over surface platinized TiO2 on the photocatalytic oxidation of nitric oxide.

    PubMed

    Wang, Haiqiang; Wu, Zhongbiao; Liu, Yue; Wang, Yuejun

    2009-02-01

    Various surface platinized TiO(2) were prepared by four different preparation methods and investigated with respect to their behaviors in UV photocatalytic oxidation of nitric oxide. The physicochemical properties of the Pt modified TiO(2) were investigated by X-ray diffraction analysis, X-ray photoelectron spectrum analysis, transmission electron microscopy, and photoluminescence spectra. From the experimental results, it was found that new electronic states were observed above the valence bands of PtOx-TiO(2) and PtClx-TiO(2). And the lifetime of electrons and holes was found prolonged in the PtOx-TiO(2) catalysts. The activity tests showed that the dopants existed as metallic Pt and platinum chloride had little contribution to the photocatalytic oxidation of NO in gas phase. However, the dopant which existed as PtOx could improve the NO photocatalytic oxidation efficiency and the reaction rate. The photocatalytic activity of the 0.05 at% PtOx-TiO(2) was nearly three times higher than that of the pure Degussa P25 with an inlet NO concentration of 200 ppm.

  10. Effect of dopant concentration on visible light driven photocatalytic activity of Sn1-xAgxS2.

    PubMed

    Cui, Xiaodan; Xu, Wangwang; Xie, Zhiqiang; Dorman, James A; Gutierrez-Wing, Maria Teresa; Wang, Ying

    2016-10-18

    Tin(iv) sulfide (SnS2), as a mid-band-gap semiconductor shows good potential as an excellent photocatalyst due to its low cost, wide light spectrum response and environment-friendly nature. However, to meet the demands of large-scale water treatment, a SnS2 photocatalyst with a red-shifted band gap, increased surface area and accelerated molecule and ion diffusion is required. Doping is a facile method to manipulate the optical and chemical properties of semiconductor materials simultaneously. In this work, SnS2 photocatalysts with varied Ag doping content are synthesized through a facile one-step hydrothermal method. The product is characterized by XRD, SEM, TEM and UV-Vis spectrometry. The photocatalytic activity of the as-prepared Sn1-xAgxS2 is studied by the degradation of methylene blue (MB) dye under solar light irradiation. It is found that increasing the Ag dopant concentration can effectively increase the solar light adsorption efficiency of the photocatalyst and accelerate heterogeneous photocatalysis. The optimal concentration of Ag dopant is found to be 5% with the highest rate constant being 1.8251 hour(-1). This study demonstrates that an optimal amount of Ag doping can effectively increase the photocatalytic performance of SnS2 and will promote the commercialization of such photocatalysts in the photocatalytic degradation of organic compounds.

  11. Effects of crystallization and dopant concentration on the emission behavior of TiO2:Eu nanophosphors

    PubMed Central

    2012-01-01

    Uniform, spherical-shaped TiO2:Eu nanoparticles with different doping concentrations have been synthesized through controlled hydrolysis of titanium tetrabutoxide under appropriate pH and temperature in the presence of EuCl3·6H2O. Through air annealing at 500°C for 2 h, the amorphous, as-grown nanoparticles could be converted to a pure anatase phase. The morphology, structural, and optical properties of the annealed nanostructures were studied using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy [EDS], and UV-Visible diffuse reflectance spectroscopy techniques. Optoelectronic behaviors of the nanostructures were studied using micro-Raman and photoluminescence [PL] spectroscopies at room temperature. EDS results confirmed a systematic increase of Eu content in the as-prepared samples with the increase of nominal europium content in the reaction solution. With the increasing dopant concentration, crystallinity and crystallite size of the titania particles decreased gradually. Incorporation of europium in the titania particles induced a structural deformation and a blueshift of their absorption edge. While the room-temperature PL emission of the as-grown samples is dominated by the 5D0 - 7Fj transition of Eu+3 ions, the emission intensity reduced drastically after thermal annealing due to outwards segregation of dopant ions. PMID:22214494

  12. Li2CO3 as an n-type dopant on Alq3-based organic light emitting devices

    NASA Astrophysics Data System (ADS)

    Kao, Po-Ching; Lin, Jie-Han; Wang, Jing-Yuan; Yang, Cheng-Hsien; Chen, Sy-Hann

    2011-05-01

    Lithium carbonate (Li2CO3) is used as an n-type dopant to improve the electro-optical properties of the Alq3-based organic light-emitting diodes (OLEDs). Li2CO3-doped tris(8-hydroxyquinolinato) aluminum (Alq3) layers with various concentrations were prepared by the co-evaporating method. When 10% Li2CO3 was doped into an Alq3 electron-transporting layer, device properties such as the turn-on voltage, the maximum luminance, and the device efficiency were improved, becoming better than LiF and comparable to devices with Cs2CO3 dopants. Li2CO3-doped Alq3 layers possess an enhanced electron injection, transporting and hole-blocking ability. The higher mobility of the Li2CO3-doped samples has been derived using space-charge-limited current (SCLC) measurements. X-ray and ultraviolet photoelectron spectroscopy results show that some electrons transfer from Li2CO3 into Alq3, which increases the electron concentration in Alq3 films and moves the Fermi level close to the lowest unoccupied molecular orbital (LUMO) of Alq3. The charge transfer was further confirmed by absorption and photoluminescence (PL) spectra. Therefore, the electron injection and transport efficiency are both enhanced due to a lower electron injection barrier and a higher electron mobility, which improve the charge carrier balance in OLEDs and lead to better device efficiency.

  13. 7,7,8,8-Tetracyanoquinodimethane based molecular dopants for p-type doping of OLEDs: A theoretical investigation

    SciTech Connect

    Cosimbescu, Lelia; Padmaperuma, Asanga B.; Gaspar, Daniel J.

    2011-11-15

    The array of organic conductivity dopants used for organic light emitting devices (OLED) to reduce the operating voltage and improve power efficiency is extremely limited. Here we report a comparative theoretical study between newly proposed analogs and the standard state-of-the-art conductivity dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). We used density functional theory to determine the bond lengths, bond angles and electronic properties, such as the energy of the highest occupied molecular orbital (E{sub HOMO}) and lowest occupied molecular orbital (E{sub LUMO}) states, as well as the triplet energies of the novel structures (ET). The ground state structures of the proposed molecules were optimized at the B3LYP/6-31G* level. The results show that substitution of one or two fluorine groups in the F4-TCNQ core with a substituted phenyl ring or other electron withdrawing moieties, will not substantially affect the geometry of the molecule or its electronic ability to accept electrons. The most significant finding was that the phenyl substitutions onto the TCNQ core are nearly perpendicular to the TCNQ plane, and thus there is no electronic communication between the two rings. This is extremely important, as such extension of the {pi} conjugated system would negatively affect the E{sub LUMO} and thus the electron affinity of the molecule.

  14. Cavitating ultrasound hydrogenation of water-soluble olefins employing inert dopants: Studies of activity, selectivity and reaction mechanisms

    SciTech Connect

    Disselkamp, Robert S.; Chajkowski, Sarah M.; Boyles, Kelly R.; Hart, Todd R.; Peden, Charles HF

    2006-12-07

    Here we discuss results obtained as part of a three-year investigation at Pacific Northwest National Laboratory of ultrasound processing to effect selectivity and activity in the hydrogenation of water-soluble olefins on transition metal catalysts. We have shown previously that of the two regimes for ultrasound processing, high-power cavitating and high-power non-cavitating, only the former can effect product selectivity dramatically (> 1000%) whereas the selectivity of the latter was comparable with those obtained in stirred/silent control experiments [R.S. Disselkamp, Y.-H. Chin, C.H.F. Peden, J. Catal., 227, 552 (2005)]. As a means of ensuring the benefits of cavitating ultrasound processing, we introduced the concept of employing inert dopants into the reacting solution. These inert dopants do not partake in solution chemistry but enable a more facile transition from high-power non-cavitating to cavitating conditions during sonication treatment. With cavitation processing conditions ensured, we discuss here results of isotopic H/D substitution for a variety of substrates and illustrate how such isotope dependent chemistries during substrate hydrogenation elucidate detailed mechanistic information about these reaction systems.

  15. Effects of dopant on the electrochemical performance of Li 4Ti 5O 12 as electrode material for lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Huang, Shahua; Wen, Zhaoyin; Zhu, Xiujian; Lin, Zuxiang

    The effects of dopant on the electrochemical properties of spinel-type Li 3.95M 0.15Ti 4.9O 12 (M = Al, Ga, Co) and Li 3.9Mg 0.1Al 0.15Ti 4.85O 12 were systematically investigated. Charge-discharge cycling were performed at a constant current density of 0.15 mA cm -2 between the cut-off voltages of 2.3 and 0.5 V, the experimental results showed that Al 3+ dopant greatly improved the reversible capacity and cycling stability over the pristine Li 4Ti 5O 12. The substitution of the Ga 3+ slightly increased the capacity of the Li 4Ti 5O 12, but did not essentially alleviate the degradation of cycling stability. Dopants such as Co 3+ and Mg 2+ to some extent worsened the electrochemical performance of the Li 4Ti 5O 12.

  16. Increase in the Random Dopant Induced Threshold Fluctuations and Lowering in Sub 100 nm MOSFETs Due to Quantum Effects: A 3-D Density-Gradient Simulation Study

    NASA Technical Reports Server (NTRS)

    Asenov, Asen; Slavcheva, G.; Brown, A. R.; Davies, J. H.; Saini, S.

    2000-01-01

    In this paper we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub 100 nm MOSFETs. The simulations have been performed using a 3-D implementation of the density gradient (DG) formalism incorporated in our established 3-D atomistic simulation approach. This results in a self-consistent 3-D quantum mechanical picture, which implies not only the vertical inversion layer quantisation but also the lateral confinement effects related to current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical dopant fluctuations, is an increase in both threshold voltage fluctuations and lowering. At the same time, the random dopant induced threshold voltage lowering partially compensates for the quantum mechanical threshold voltage shift in aggressively scaled MOSFETs with ultrathin gate oxides.

  17. Object Locating System

    NASA Technical Reports Server (NTRS)

    Arndt, G. Dickey (Inventor); Carl, James R. (Inventor)

    2000-01-01

    A portable system is provided that is operational for determining, with three dimensional resolution, the position of a buried object or approximately positioned object that may move in space or air or gas. The system has a plurality of receivers for detecting the signal front a target antenna and measuring the phase thereof with respect to a reference signal. The relative permittivity and conductivity of the medium in which the object is located is used along with the measured phase signal to determine a distance between the object and each of the plurality of receivers. Knowing these distances. an iteration technique is provided for solving equations simultaneously to provide position coordinates. The system may also be used for tracking movement of an object within close range of the system by sampling and recording subsequent position of the object. A dipole target antenna. when positioned adjacent to a buried object, may be energized using a separate transmitter which couples energy to the target antenna through the medium. The target antenna then preferably resonates at a different frequency, such as a second harmonic of the transmitter frequency.

  18. AOTV bow shock location

    NASA Technical Reports Server (NTRS)

    Desautel, D.

    1985-01-01

    Hypersonic bow-shock location and geometry are of central importance to the aerodynamics and aerothermodynamics of aeroassisted orbital transfer vehicles (AOTVs), but they are difficult to predict for a given vehicle configuration. This paper reports experimental measurements of shock standoff distance for the 70 deg cone AOTV configuration in shock-tunnel-test flows at Mach numbers of 3.8 to 7.9 and for angles of attack from 0 deg to 20 deg. The controlling parameter for hypersonic bow-shock standoff distance (for a given forebody shape) is the mean normal-shock density ratio. Values for this parameter in the tests reported are in the same range as those of the drag-brake AOTV perigee regime. Results for standoff distance are compared with those previously reported in the literature for this AOTV configuration. It is concluded that the AOTV shock standoff distance for the conical configuration, based on frustrum (base) radius, is equivalent to that of a sphere with a radius about 35 percent greater than that of the cone; the distance is, therefore, much less than reported in previous studies. Some reasons for the discrepancies between the present and previous are advanced. The smaller standoff distance determined here implies there will be less radiative heat transfer than was previously expected.

  19. Diameter-Dependent Modulus and Melting Behavior in Electrospun Semicrystalline Polymer Fibers

    SciTech Connect

    Y Liu; S Chen; E Zussman; C Korach; W Zhao; M Rafailovich

    2011-12-31

    Confinement of the semicrystalline polymers, poly(ethylene-co-vinyl acetate) (PEVA) and low-density polyethylene (LDPE), produced by electrospinning has been observed to produce fibers with large protrusions, which have not been previously observed in fibers of comparable diameters produced by other methods. SAXS spectra confirmed the crystalline structure and determined that the lamellar spacing was almost unchanged from the bulk. Measurement of the mechanical properties of these fibers, by both shear modulation force microscopy (SMFM) and atomic force acoustic microscopy (AFAM), indicates that the modulii of these fibers increases with decreasing diameter, with the onset at {approx}10 {micro}m, which is an order of magnitude larger than previously reported. Melting point measurements indicate a decrease of more than 7% in T{sub m}/T{sub 0} (where T{sub m} is the melting point of semicrystalline polymer fibers and T{sub 0} is the melting point of the bulk polymer) for fibers ranging from 4 to 10 {micro}m in diameter. The functional form of the decrease followed a universal curve for PEVA, when scaled with T{sub 0}.

  20. Diameter-dependent dissipation of vibration energy of cantilevered multiwall carbon nanotubes.

    PubMed

    Sawaya, Shintaro; Arie, Takayuki; Akita, Seiji

    2011-04-22

    This study investigated the mechanical properties of vibrating cantilevered multiwall carbon nanotubes in terms of energy loss in a vibrating nanotube. Young's moduli of the nanotubes show a clear dependence of the perfection of the sp(2) carbon network, as determined from Raman spectroscopy. The energy loss corresponding to the inverse of the quality factor increases with increasing tube diameter, although the nanotube maintains high mechanical strength around 0.5 TPa. This fact implies that the vibration energy is dissipated mainly not by defects, but by van der Waals interactions between walls.

  1. Diffusion, Clustering, and Magnetic Properties of Mn dopants on a 2x2-T4 GaN(0001) Substrate

    SciTech Connect

    Hao, Shiqiang; Zhang, Zhenyu

    2007-01-01

    Based on extensive rst-principles calculations with density-functional theory (DFT), we propose a growth model of Mn on reconstructed 22-T4 GaN(0001), characterized by substitution of Ga by a Mn adatom via a surface site T4. At lower Mn concentration, Mn dopants distribute in Ga sublattice randomly forming intrinsic DMS. At higher concentration, planar ferromagnetic clusters oriented in (0001) plane are easily formed at lower temperature, but ferrimagnetic zigzag columns along the growth orientation will be formed at higher temperature. Based on these ndings, we qualitatively explain the puzzling experimental observations on TC variations, as well as the dierent magnetic natures in Ga1 xMnxN systems.

  2. Quantum Mechanical Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 Micron MOSFETs

    NASA Technical Reports Server (NTRS)

    Asenov, Asen; Slavcheva, G.; Brown, A. R.; Davies, J. H.; Saini, Subhash

    1999-01-01

    A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This has been achieved using a full 3D implementation of the density gradient (DG) formalism incorporated in our previously published 3D 'atomistic' simulation approach. This results in a consistent, fully 3D, quantum mechanical picture which implies not only the vertical inversion layer quantisation but also the lateral confinement effects manifested by current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical fluctuations, is an increase in both threshold voltage fluctuations and lowering.

  3. Secondary ions mass spectroscopy measurements of dopant impurities in highly stressed InGaN laser diodes

    SciTech Connect

    Marona, L.; Suski, T.

    2011-06-13

    We performed a systematic secondary ions mass spectroscopy (SIMS) study of dopant impurities in life-time stressed InGaN laser devices in order to investigate the main degradation mechanism that is observed in nitride laser diodes. A continuous wave (cw) current density of 3 kA/cm{sup 2} was applied to InGaN laser diodes over an extended period of time and we observed the characteristic square root degradation of optical power. We compared the SIMS profiles of Mg, H, and Si impurities in the aged devices and observe that the impurities are remarkably stable over 10 000 h of cw operation. Nor is there any SIMS evidence of p-contact metals penetrating into the semiconductor material. Thus our SIMS results are contrary to what one would expect for impurity diffusion causing the observed square root degradation characteristic.

  4. SEMICONDUCTOR TECHNOLOGY: SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

    NASA Astrophysics Data System (ADS)

    Haiping, Shang; Qiuxia, Xu

    2010-05-01

    By means of analyzing the I-V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height (varphiB, eff) and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on the varphiB, eff of NiSi/n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of varphiB, eff and RNiSi are discussed.

  5. Hydrogen adsorption on Be, Mg, Ca and Sr doped graphenes: The role of the dopant in the IIA main group

    NASA Astrophysics Data System (ADS)

    Luo, Huijuan; Li, Hejun; Fu, Qiangang

    2017-02-01

    Hydrogen (H2) adsorption on the IIA elements doped double-vacancy graphenes (BeG, MgG, CaG and SrG) was studied by using dispersion-corrected density functional theory calculations. Through investigation of different numbers of hydrogen dockings from two directions, it is found that 1H2/BeG, 1H2/MgG, 8H2/CaG and 8H2/SrG are the most stable adsorption configurations for Be, Mg, Ca and Sr doped graphenes, respectively. Atomic radius, electronegativity and ionization potential of the IIA dopant contribute to the dominating adsorption mechanism under specific H2 concentration. The study would facilitate exploration of high performance graphene-related supports for hydrogen storage.

  6. Coherent coupling of two dopants in a silicon nanowire probed by Landau-Zener-Stückelberg interferometry.

    PubMed

    Dupont-Ferrier, E; Roche, B; Voisin, B; Jehl, X; Wacquez, R; Vinet, M; Sanquer, M; De Franceschi, S

    2013-03-29

    We report on microwave-driven coherent electron transfer between two coupled donors embedded in a silicon nanowire. By increasing the microwave frequency we observe a transition from incoherent to coherent driving revealed by the emergence of a Landau-Zener-Stückelberg quantum interference pattern of the measured current through the donors. This interference pattern is fitted to extract characteristic parameters of the double-donor system. In particular we estimate a charge dephasing time of 0.3±0.1  ns, comparable to other types of charge-based two-level systems. The demonstrated coherent coupling between two dopants is an important step towards donor-based quantum computing devices in silicon.

  7. Ferroelectric C* phase induced in a nematic liquid crystal matrix by a chiral non-mesogenic dopant

    NASA Astrophysics Data System (ADS)

    Pozhidaev, E. P.; Torgova, S. I.; Barbashov, V. A.; Minchenko, M. V.; Sulyanov, S. N.; Dorovatovskii, P. V.; Ostrovskii, B. I.; Strigazzi, A.

    2015-02-01

    We report on a ferroelectric chiral smectic C (C*) phase obtained in a mixture of a nematic liquid crystal (NLC) and a chiral nonmesogenic dopant. The existence of C* phase was proven by calorimetric, dielectric and optical measurements, and also by X-rays analysis. The smectic C* which is obtained in such a way can flow, allowing to restore the ferroelectric liquid crystal layer structure in the electro-optical cells after action of the mechanical stress, as it happens with the cells filled with NLC. The proposed method of obtaining smectic C* material allows us to create innovative electro-optical cell combining the advantages of NLC (mechanical resilience) and smectic C* (high switching speed).

  8. A fully 3D atomistic quantum mechanical study on random dopant induced effects in 25nm MOSFETs

    SciTech Connect

    Wang, Lin-Wang; Jiang, Xiang-Wei; Deng, Hui-Xiong; Luo, Jun-Wei; Li, Shu-Shen; Wang, Lin-Wang; Xia, Jian-Bai

    2008-07-11

    We present a fully 3D atomistic quantum mechanical simulation for nanometered MOSFET using a coupled Schroedinger equation and Poisson equation approach. Empirical pseudopotential is used to represent the single particle Hamiltonian and linear combination of bulk band (LCBB) method is used to solve the million atom Schroedinger's equation. We studied gate threshold fluctuations and threshold lowering due to the discrete dopant configurations. We compared our results with semiclassical simulation results. We found quantum mechanical effects increase the threshold fluctuation while decreases the threshold lowering. The increase of threshold fluctuation is in agreement with previous study based on approximated density gradient approach to represent the quantum mechanical effect. However, the decrease in threshold lowering is in contrast with the previous density gradient calculations.

  9. Elucidating the effect of copper as a redox additive and dopant on the performance of a PANI based supercapacitor.

    PubMed

    Pandey, Kavita; Yadav, Pankaj; Mukhopadhyay, Indrajit

    2015-01-14

    In this article, the effect of copper (Cu) as a redox additive and dopant on the performance of a polyaniline (PANI) based supercapacitor was thoroughly investigated. The electrochemical properties of PANI in H2SO4 and in H2SO4 + CuSO4 and Cu doped PANI in H2SO4 were studied using cyclic voltammetry (CV) and impedance spectroscopy (IS). The CV result indicates that the capacity of PANI in H2SO4 was significantly improved with the introduction of Cu(2+) ions into the electrolyte, but it appeared unstable because of underpotential deposition of copper over the PANI surface and the relatively irreversible nature of the redox reaction. However, a stable and improved performance was obtained for Cu doped PANI due to the combined effect of an increase in conductivity and the surface modification of the PANI film. For Cu doped PANI, nearly ∼2.4 and ∼1.5 fold improved interfacial capacitance was achieved compared to that of PANI (H2SO4) and PANI (H2SO4 + CuSO4) respectively. The obtained Nyquist spectra for all the configurations were analysed using an equivalent circuit to understand the fundamentals of capacitive and resistive response of the supercapacitor. The IS measurements lead to direct determination of parameters like series resistance, rate capability of electrodes, ion diffusion phenomena and interfacial capacitance. The experimental results and their analysis will have significant impact on understanding the effect of dopants and redox additives on the performance of PANI based supercapacitors and also lay the basis for designing a supercapacitor with an appropriate electrode and electrolyte material for numerous industrial and consumer applications.

  10. Defect induced tunable near infrared emission of Er-CeO2 by heterovalent co-dopants.

    PubMed

    Florea, Mihaela; Avram, Daniel; Cojocaru, Bogdan; Tiseanu, Ion; Parvulescu, Vasile; Tiseanu, Carmen

    2016-07-21

    We investigate the effects of heterovalent co-dopants on the structural and emission properties of 1% Er-CeO2 nanoparticles. The CeO2 oxide host was selected on the basis of its fairly well-understood defect chemistry in either a pure or doped state. As a luminescent activator, Er is acknowledged as an interesting element due to its rich luminescence and excitation properties spanning the visible to near-infrared range. The optically inactive trivalent La and monovalent Li metal ions with a concentration of up to 20% were chosen to presumably generate a variable amount of defects in the Er-CeO2 lattice. It was found that La and Li co-dopants induced distinct changes related to the size, lattice constant, bandgap energy, lattice and surface defects of Er-CeO2. As a result of these changes, a strong modulation of the luminescence intensity and shape was measured using a suite of excitation conditions (charge-transfer absorption band of CeO2, direct/up-conversion into Er absorptions and X-ray excitation modes). The use of Eu as a luminescent probe offered additional information concerning the effects of La/Li co-doping on the local structure surrounding the luminescent activator. Remarkably high percentages of 90 and 98% of the total emission of Er measured between 500 and 1100 nm are measured in the near-infrared region at 980 nm under X-ray and up-conversion excitation at ∼1500 nm, respectively. The optical properties suggest that Li, Er co-doped CeO2 has good potential for therapy and biological imaging.

  11. Neodymium as a magnesium tetraborate matrix dopant and its applicability in dosimetry and as a temperature sensor

    NASA Astrophysics Data System (ADS)

    Souza, Luiza F.; Antonio, Patrícia L.; Caldas, Linda V. E.; Souza, Divanizia N.

    2015-06-01

    MgB4O7 doped with lanthanides such as Dy3+ and Tm3+ are phosphors with very well established use in routine personal dosimetry. Certain characteristics, for example linearity in a broad dose range, low energy dependence, Zeff=8.5, high sensitivity and a relatively simple thermoluminescent (TL) emission curve make MgB4O7 a good material for thermoluminescent dosimetry. With the aim of analyzing other doping possibilities, this paper presents some preliminary results on the use of Nd3+ as a dopant in the MgB4O7 matrix. Furthermore, we evaluated the effect of using two different lanthanides, Nd and Dy, in the host matrix. In the present work, the phosphors were produced through solid state synthesis and X-ray diffraction confirmed the success of the technique. The TL behavior of MgB4O7:Nd was assessed when irradiated with gamma (60Co) and beta radiation, to determine the effect of the dopant concentration and the dose-response over a broad dose range. We also evaluated the dose-response of MgB4O7:Nd,Dy when irradiated with 60Co. The TL responses of the phosphors were compared with that of MgB4O7:Dy. These preliminary studies show that for the absorbed dose range studied, the sensitivity of MgB4O7:Nd,Dy was 3.8 and 28 times higher than that of MgB4O7:Dy and MgB4O7:Nd. The materials also presented linearity from 5 to 40 Gy. Above this value, the dose response curve exhibited sublinear behavior. These preliminary results will assist in developing a new temperature sensor based on a MgB4O7 dosimeter.

  12. Radiotherapy dosimetry and the thermoluminescence characteristics of Ge-doped fibres of differing germanium dopant concentration and outer diameter

    NASA Astrophysics Data System (ADS)

    Noor, N. Mohd; Fadzil, M. S. Ahmad; Ung, N. M.; Maah, M. J.; Mahdiraji, G. A.; Abdul-Rashid, H. A.; Bradley, D. A.

    2016-09-01

    We examine the influence of elevated dopant concentration on the thermoluminescence characteristics of novel Ge-doped silica fibres. Basic dosimetric characteristics of the TL media were obtained, including linearity, reproducibility, energy dependence, fading, minimum detectable dose and glow curve analysis, use being made of a 60Co gamma irradiation facility (mean energy 1.25 MeV) and an electron linear accelerator producing photons at an accelerating potential of 6 and 10 MV. The 6 mol% Ge-doped fibres were found to provide TL response superior to that of 8- and 10 mol% Ge-doped fibres, both for fibres with outer diameter of 241 μm and 604 μm. Concerning reproducibility, obtained under three different test conditions, at <10% the 6 mol% Ge dopant concentration was observed to provide the superior coefficient of variation (CV). In regard to energy dependence, the 10 mol% Ge doped cylindrical fibres produced the largest gradient values at 0.364 and 0.327 for the 241 μm and 604 μm diameter cylindrical fibres respectively and thus the greatest energy dependency. Measured 33 days post irradiation; the 6 mol% Ge doped cylindrical fibres showed the least TL signal loss, at 21% for the 241 μm cylindrical fibre and <40% for the 604 μm cylindrical fibres. The results also revealed that the 6 mol% optical fibres provided the lowest minimum detectable dose, at 0.027 Gy for 6 MV photon beams. Evaluations of these characteristics are supporting development of novel Ge-doped optical fibres for dosimetry in radiotherapy.

  13. Impact-Locator Sensor Panels

    NASA Technical Reports Server (NTRS)

    Christiansen, Eric L.; Byers, Terry; Gibbons, Frank

    2008-01-01

    Electronic sensor systems for detecting and locating impacts of rapidly moving particles on spacecraft have been invented. Systems of this type could also be useful on Earth in settings in which the occurrence of impacts and/or the locations of impacts are not immediately obvious and there are requirements to detect and quickly locate impacts to prevent or minimize damage.

  14. DIORAMA Location Type User's Guide

    SciTech Connect

    Terry, James Russell

    2015-01-29

    The purpose of this report is to present the current design and implementation of the DIORAMA location type object (LocationType) and to provide examples and use cases. The LocationType object is included in the diorama-app package in the diorama::types namespace. Abstractly, the object is intended to capture the full time history of the location of an object or reference point. For example, a location may be speci ed as a near-Earth orbit in terms of a two-line element set, in which case the location type is capable of propagating the orbit both forward and backward in time to provide a location for any given time. Alternatively, the location may be speci ed as a xed set of geodetic coordinates (latitude, longitude, and altitude), in which case the geodetic location of the object is expected to remain constant for all time. From an implementation perspective, the location type is de ned as a union of multiple independent objects defi ned in the DIORAMA tle library. Types presently included in the union are listed and described in subsections below, and all conversions or transformation between these location types are handled by utilities provided by the tle library with the exception of the \\special-values" location type.

  15. Spring loaded locator pin assembly

    DOEpatents

    Groll, Todd A.; White, James P.

    1998-01-01

    This invention deals with spring loaded locator pins. Locator pins are sometimes referred to as captured pins. This is a mechanism which locks two items together with the pin that is spring loaded so that it drops into a locator hole on the work piece.

  16. Spring loaded locator pin assembly

    DOEpatents

    Groll, T.A.; White, J.P.

    1998-03-03

    This invention deals with spring loaded locator pins. Locator pins are sometimes referred to as captured pins. This is a mechanism which locks two items together with the pin that is spring loaded so that it drops into a locator hole on the work piece. 5 figs.

  17. In silico optimization of phase-change materials for digital memories: a survey of first-row transition-metal dopants for Ge2Sb2Te5

    NASA Astrophysics Data System (ADS)

    Skelton, J. M.; Elliott, S. R.

    2013-05-01

    Phase-change materials are the alloys at the heart of an emerging class of next-generation, non-volatile digital memory technologies. However, the widely studied Ge-Sb-Te system possesses several undesirable properties, and enhancing its properties, e.g. by doping, is an area of active research. Various first-row transition-metal dopants have been shown to impart useful property enhancements, but a systematic study of the entire period has yet to be undertaken, and little has been done to investigate their interaction with the host material at the atomic level. We have carried out first-principles computer simulations of the complete phase-change cycle in Ge2Sb2Te5 doped with each of the ten first-row transition metals. In this article, we present a comprehensive survey of the electronic, magnetic and optical properties of these doped materials. We discuss in detail their atomic-level structure, and relate the microscopic behaviours of the dopant atoms to their influence on the Ge2Sb2Te5 host. By considering an entire family of similar materials, we identify trends and patterns which might be used to predict suitable dopants for optimizing materials for specific phase-change applications. The computational method employed here is general, and this materials-discovery approach could be applied in the future to study other families of potential dopants for such materials.

  18. In silico optimization of phase-change materials for digital memories: a survey of first-row transition-metal dopants for Ge₂Sb₂Te₅.

    PubMed

    Skelton, J M; Elliott, S R

    2013-05-22

    Phase-change materials are the alloys at the heart of an emerging class of next-generation, non-volatile digital memory technologies. However, the widely studied Ge-Sb-Te system possesses several undesirable properties, and enhancing its properties, e.g. by doping, is an area of active research. Various first-row transition-metal dopants have been shown to impart useful property enhancements, but a systematic study of the entire period has yet to be undertaken, and little has been done to investigate their interaction with the host material at the atomic level. We have carried out first-principles computer simulations of the complete phase-change cycle in Ge2Sb2Te5 doped with each of the ten first-row transition metals. In this article, we present a comprehensive survey of the electronic, magnetic and optical properties of these doped materials. We discuss in detail their atomic-level structure, and relate the microscopic behaviours of the dopant atoms to their influence on the Ge2Sb2Te5 host. By considering an entire family of similar materials, we identify trends and patterns which might be used to predict suitable dopants for optimizing materials for specific phase-change applications. The computational method employed here is general, and this materials-discovery approach could be applied in the future to study other families of potential dopants for such materials.

  19. Left-handed properties of manganite-perovskites La{sub 1-x}Sr{sub x}MnO{sub 3} at various dopant concentrations

    SciTech Connect

    Belozorov, D. P.; Girich, A. A.; Tarapov, S. I.; Pogorily, A. M.; Tovstolytkin, A. I.; Belous, A. G.; Solopan, S. A.

    2014-03-15

    The experimental study of Double Negative (DNG) state of electromagnetic wave propagating in lanthanum manganite-perovskites doped with strontium La{sub 1-x}Sr{sub x}MnO{sub 3} is provided firstly below individual Curie temperatures (in ferromagnetic metal state (FM) for La{sub 1-x}Sr{sub x}MnO{sub 3}). Various dopant concentrations are considered for ceramic specimens: x = 0.15;  0.225;  0.3;  0.45;  0.6. It is shown that dependence of the DNG-peak intensity on dopant concentration is sharply non-monotone with maximum at the dopant concentrations x = 0.225 – 0.3. This behaviour follows the change of Curie temperature with increase of dopant concentration in such substances. The obtained dependence of DNG peak intensity supports the opinion concerning the role of disorder in highly doped manganite-perovskite magnetic ceramics under study.

  20. Incorporation of lanthanide (Eu(3+)) ions in ZnS semiconductor quantum dots with a trapped-dopant model and their photoluminescence spectroscopy study.

    PubMed

    Wang, Yongbo; Liang, Xuhua; Liu, Enzhou; Hu, Xiaoyun; Fan, Jun

    2015-09-18

    Doping quantum dots (QDs) with lanthanide (Ln) ions is promising to modify the optical properties of QDs, but incorporating Ln(3+) ions into QD hosts remains a challenge. In this work, we adopt the trapped-dopant model for fabricating Eu-doped ZnS QDs via direct wet chemical synthesis. Sharp Eu dopant photoluminescence (PL) was observed in the PL spectra of the as-prepared Eu-doped ZnS QDs and the bands at ~590, ~618 and ~695 nm were assigned to transitions from (5)D0 to (7)F1, (7)F2 and (7)F4, respectively. Quenching of the ZnS bandgap PL and enhancement of the Eu dopant PL were observed with increasing Eu(3+) doping concentration, and also, the excitation spectra for Eu emission (618 nm) were similar to the typical excitonic features of the ZnS host. These spectroscopic results, as well as the XRD and EDS data, demonstrated that Eu(3+) ions were incorporated in the ZnS host rather than just on the surface, and the Eu dopant PL was derived from energy transfer from the QD host to Eu(3+) rather than direct excitation of Eu(3+). By surface passivation, the sharp Eu emission was well-separated from the ZnS bandgap emission, which led to a good signal-to-noise ratio for more sensitive detection.

  1. Dopant-assisted atmospheric pressure photoionization of patulin in apple juice and apple-based food with liquid chromatography-tandem mass spectrometry.

    PubMed

    Zhang, Kai; Wong, Jon W; Mai, Huy; Trucksess, Mary W

    2014-05-07

    A dopant-assisted atmospheric pressure photoionization (APPI) with liquid chromatography tandem mass spectrometry (LC-MS/MS) method was developed to determine patulin in apple juice and apple-based food. Different dopants, dopant flow rates, and LC separation conditions were evaluated. Using toluene as the dopant, the LC-APPI-MS/MS method achieved a linear calibration from 12.5 to 2000 μg/L (r(2) > 0.99). Matrix-dependent limits of quantitation (LOQs) were from 8 μg/L (solvent) to 12 μg/L (apple juice). [(13)C]-Patulin-fortified apple juice samples were directly analyzed by the LC-APPI-MS/MS method. Other apple-based food was fortified with [(13)C]-patulin, diluted using water (1% formic acid), centrifuged, and filtered, followed by LC-APPI-MS/MS analysis. In clear apple juice, unfiltered apple cider, applesauce, and apple-based baby food, average recoveries were 101 ± 6% (50 μg/kg), 103 ± 5% (250 μg/kg), and 102 ± 5% (1000 μg/kg) (av ± SD, n = 16). Using the suggested method, patulin was detected in 3 of 30 collected market samples with concentrations ranging from

  2. Role of dopant concentration, crystal phase and particle size on microbial inactivation of Cu-doped TiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Sahu, Manoranjan; Wu, Bing; Zhu, Liying; Jacobson, Craig; Wang, Wei-Ning; Jones, Kristen; Goyal, Yogesh; Tang, Yinjie J.; Biswas, Pratim

    2011-10-01

    The properties of Cu-doped TiO2 nanoparticles (NPs) were independently controlled in a flame aerosol reactor by varying the molar feed ratios of the precursors, and by optimizing temperature and time history in the flame. The effect of the physico-chemical properties (dopant concentration, crystal phase and particle size) of Cu-doped TiO2 nanoparticles on inactivation of Mycobacterium smegmatis (a model pathogenic bacterium) was investigated under three light conditions (complete dark, fluorescent light and UV light). The survival rate of M. smegmatis (in a minimal salt medium for 2 h) exposed to the NPs varied depending on the light irradiation conditions as well as the dopant concentrations. In dark conditions, pristine TiO2 showed insignificant microbial inactivation, but inactivation increased with increasing dopant concentration. Under fluorescent light illumination, no significant effect was observed for TiO2. However, when TiO2 was doped with copper, inactivation increased with dopant concentration, reaching more than 90% (>3 wt% dopant). Enhanced microbial inactivation by TiO2 NPs was observed only under UV light. When TiO2 NPs were doped with copper, their inactivation potential was promoted and the UV-resistant cells were reduced by over 99%. In addition, the microbial inactivation potential of NPs was also crystal-phase-and size-dependent under all three light conditions. A lower ratio of anatase phase and smaller sizes of Cu-doped TiO2 NPs resulted in decreased bacterial survival. The increased inactivation potential of doped TiO2 NPs is possibly due to both enhanced photocatalytic reactions and leached copper ions.

  3. Role of dopant concentration, crystal phase and particle size on microbial inactivation of Cu-doped TiO2 nanoparticles.

    PubMed

    Sahu, Manoranjan; Wu, Bing; Zhu, Liying; Jacobson, Craig; Wang, Wei-Ning; Jones, Kristen; Goyal, Yogesh; Tang, Yinjie J; Biswas, Pratim

    2011-10-14

    The properties of Cu-doped TiO(2) nanoparticles (NPs) were independently controlled in a flame aerosol reactor by varying the molar feed ratios of the precursors, and by optimizing temperature and time history in the flame. The effect of the physico-chemical properties (dopant concentration, crystal phase and particle size) of Cu-doped TiO(2) nanoparticles on inactivation of Mycobacterium smegmatis (a model pathogenic bacterium) was investigated under three light conditions (complete dark, fluorescent light and UV light). The survival rate of M. smegmatis (in a minimal salt medium for 2 h) exposed to the NPs varied depending on the light irradiation conditions as well as the dopant concentrations. In dark conditions, pristine TiO(2) showed insignificant microbial inactivation, but inactivation increased with increasing dopant concentration. Under fluorescent light illumination, no significant effect was observed for TiO(2). However, when TiO(2) was doped with copper, inactivation increased with dopant concentration, reaching more than 90% (>3 wt% dopant). Enhanced microbial inactivation by TiO(2) NPs was observed only under UV light. When TiO(2) NPs were doped with copper, their inactivation potential was promoted and the UV-resistant cells were reduced by over 99%. In addition, the microbial inactivation potential of NPs was also crystal-phase-and size-dependent under all three light conditions. A lower ratio of anatase phase and smaller sizes of Cu-doped TiO(2) NPs resulted in decreased bacterial survival. The increased inactivation potential of doped TiO(2) NPs is possibly due to both enhanced photocatalytic reactions and leached copper ions.

  4. Characterization of dopant diffusion within semiconducting polymer and small-molecule films using infrared-active vibrational modes and attenuated total reflectance infrared spectroscopy.

    PubMed

    Maliakal, Ashok J

    2013-09-11

    Understanding dopant diffusion within organic and polymeric semiconductors is of great importance toward the development of organic photovoltaic and electronic devices, many of which require layered structures with controlled doping profiles (e.g., p-n and p-i-n structures). The current paper demonstrates a new method to determine the diffusion and permeability coefficients for dopant diffusion within polymeric and small-molecule organic semiconductors using attenuated total reflectance infrared (ATR-IR) spectroscopy and taking advantage of the intense IR-active vibrational bands created when dopants such as iodine accept charge from a semiconducting polymer to generate polaronic species. The diffusion and permeability coefficients for iodine within poly(3-hexylthiophene) (P3HT) are determined to be 2.5×10(-11)±1.2×10(-11) cm2/s and 2.4×10(-8)±1.2×10(-8) cm2/s·atm, respectively. The approach is applied to P3HT/PCBM (1:1 mass ratio) films, and the diffusion and permeability coefficients through these composite films are determined to be 7.8×10(-11)±2.8×10(-11) cm2/s and 4.8×10(-8)±1.3×10(-8) cm2/s·atm, respectively. Finally, the approach is extended to determining iodine diffusion within the polycrystalline semiconductor tetraphenylporphyrin (TPP) in a bilayer film with P3HT, and the diffusion coefficient of iodine through TPP is determined to be 7.1×10(-14)±1.1×10(-14) cm2/s. Although the current paper determines diffusion and permeability for the dopant iodine, this approach should be applicable to a wide array of dopants and polymeric and small-molecule semiconductors of interest in photovoltaic and electronic applications.

  5. Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

    NASA Astrophysics Data System (ADS)

    Roth, T.; Rosenits, P.; Diez, S.; Glunz, S. W.; Macdonald, D.; Beljakowa, S.; Pensl, G.

    2007-11-01

    Boron-doped silicon wafers implanted with low doses of manganese have been analyzed by means of deep-level transient spectroscopy (DLTS), injection-dependent lifetime spectroscopy, and temperature-dependent lifetime spectroscopy. While DLTS measurements allow the defect levels and majority carrier capture cross sections to be determined, the lifetime spectroscopy techniques allow analysis of the dominant recombination levels and the corresponding ratios of the capture cross sections. Interstitial manganese and manganese-boron pairs were found to coexist, and their defect parameters have been investigated. In good agreement with the literature, this study identifies the defect level of manganese-boron pairs to be located in the lower half of the band gap at an energy level of Ev+0.55 eV with a majority carrier capture cross section of σp=3.5×10-13 cm2. The capture cross-section ratio was found to be k=σn/σp=6.0. This implies that the previously unknown minority carrier capture cross section is σn=2.1×1012 cm2. Concerning the defect related to interstitial manganese, this study identifies the most recombination-active level to be located in the upper half of the band gap at EC-0.45 eV with a corresponding ratio of the capture cross sections of k =9.4. In addition, the temperature-dependent association time constant of manganese-boron pairs is determined to be τassoc,Mn=8.3×105 K-1 cm-3(T /Ndop)exp(0.67 eV/kBT) and found to differ from that for iron by a factor of 3 at room temperature, allowing this association time constant to be used as a fingerprint for a possible contamination with manganese. Also, the diffusion coefficient of interstitial manganese in silicon is determined from these experiments in a temperature range from 70 to 120 °C. It can be represented by the expression DMn=6.9×10-4 cm2 s-1 exp(-0.67 eV/kBT).

  6. A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors

    SciTech Connect

    Hurle, D. T. J.

    2010-06-15

    A thermodynamic model is used to analyze available experimental data relevant to point defects in the binary zinc-blende III-V compounds (Ga,In)-(P,As,Sb). The important point defects and their complexes in each of the materials are identified and included in the model. Essentially all of the available experimental data on dopant solubility, crystal density, and lattice parameter of melt and solution grown crystals and epilayers are reproduced by the model. It extends an earlier study [Hurle, J. Appl. Phys. 85, 6957 (1999)] devoted solely to GaAs. Values for the enthalpy and entropy of formation of both native and dopant related point defects are obtained by fitting to experimental data. In undoped material, vacancies, and interstitials on the Group V sublattice dominate in the vicinity of the melting point (MP) in both the phosphides and arsenides, whereas, in the antimonides, vacancies on both sublattices dominate. The calculated concentrations of the native point defects are used to construct the solidus curves of all the compounds. The charged native point defect concentrations at the MP in four of the six materials are significantly higher than their intrinsic carrier concentrations. Thus the usually assumed high temperature 'intrinsic' electroneutrality condition for undoped material (n=p) is not valid for these materials. In GaSb, the Ga{sub Sb} antisite defect appears to be grown-in from the melt. This contrasts with the As{sub Ga} defect in GaAs for which the concentration grown-in at the MP is negligibly small. Compensation of donor-doped material by donor-Group III vacancy complexes is shown to exist in all the compounds except InP where Group VI doped crystals are uncompensated and in InSb where there is a lack of experimental data. The annealing effects in n{sup +} GaAs, including lattice superdilation, which were shown in the earlier paper to be due to Group III vacancy undersaturation during cooling, are found to be present also in GaSb and In

  7. A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Hurle, D. T. J.

    2010-06-01

    A thermodynamic model is used to analyze available experimental data relevant to point defects in the binary zinc-blende III-V compounds (Ga,In)-(P,As,Sb). The important point defects and their complexes in each of the materials are identified and included in the model. Essentially all of the available experimental data on dopant solubility, crystal density, and lattice parameter of melt and solution grown crystals and epilayers are reproduced by the model. It extends an earlier study [Hurle, J. Appl. Phys. 85, 6957 (1999)] devoted solely to GaAs. Values for the enthalpy and entropy of formation of both native and dopant related point defects are obtained by fitting to experimental data. In undoped material, vacancies, and interstitials on the Group V sublattice dominate in the vicinity of the melting point (MP) in both the phosphides and arsenides, whereas, in the antimonides, vacancies on both sublattices dominate. The calculated concentrations of the native point defects are used to construct the solidus curves of all the compounds. The charged native point defect concentrations at the MP in four of the six materials are significantly higher than their intrinsic carrier concentrations. Thus the usually assumed high temperature "intrinsic" electroneutrality condition for undoped material (n=p) is not valid for these materials. In GaSb, the GaSb antisite defect appears to be grown-in from the melt. This contrasts with the AsGa defect in GaAs for which the concentration grown-in at the MP is negligibly small. Compensation of donor-doped material by donor-Group III vacancy complexes is shown to exist in all the compounds except InP where Group VI doped crystals are uncompensated and in InSb where there is a lack of experimental data. The annealing effects in n+ GaAs, including lattice superdilation, which were shown in the earlier paper to be due to Group III vacancy undersaturation during cooling, are found to be present also in GaSb and InAs. Results for native

  8. LOCAT - A Data Retrieval Program.

    DTIC Science & Technology

    1984-12-01

    STANDARSIA1 3 -A Suznn Y4Sl ’ś’. Doc 0 006 U m Nalionai Deftense U’" Defence nationale LOCAT -A DATA RETRIEVAL PROGRAM by Suzanne Y. Slinn SA RSA T Project...2.1 DESIGN PHILOSOPHY...................2 2.2 SATELLITE AND LOCATION SOFT KEY DISPLAY .. .. ........ 3 2.3...LOCAT -Calling Sequence .. .. ...... ........ 2 FIGURE 2: SAT/LOC Soft Key Display .. .. ...... ..... 3 FIGURE 3 : Frequency Soft Key Display

  9. The dopant type and amount governs the electrochemical performance of graphene platforms for the antioxidant activity quantification

    NASA Astrophysics Data System (ADS)

    Hui, Kai Hwee; Ambrosi, Adriano; Sofer, Zdeněk; Pumera, Martin; Bonanni, Alessandra

    2015-05-01

    Graphene doped with heteroatoms can show new or improved properties as compared to the original undoped material. It has been reported that the type of heteroatoms and the doping conditions can have a strong influence on the electronic and electrochemical properties of the resulting material. Here, we wish to compare the electrochemical behavior of two n-type and two p-type doped graphenes, namely boron-doped graphenes and nitrogen-doped graphenes containing different amounts of heteroatoms. We show that the boron-doped graphene containing a higher amount of dopants provides the best electroanalytical performance in terms of calibration sensitivity, selectivity and linearity of response for the detection of gallic acid normally used as the standard probe for the quantification of antioxidant activity of food and beverages. Our findings demonstrate that the type and amount of heteroatoms used for the doping have a profound influence on the electrochemical detection of gallic acid rather than the structural properties of the materials such as amounts of defects, oxygen functionalities and surface area. This finding has a profound influence on the application of doped graphenes in the field of analytical chemistry.Graphene doped with heteroatoms can show new or improved properties as compared to the original undoped material. It has been reported that the type of heteroatoms and the doping conditions can have a strong influence on the electronic and electrochemical properties of the resulting material. Here, we wish to compare the electrochemical behavior of two n-type and two p-type doped graphenes, namely boron-doped graphenes and nitrogen-doped graphenes containing different amounts of heteroatoms. We show that the boron-doped graphene containing a higher amount of dopants provides the best electroanalytical performance in terms of calibration sensitivity, selectivity and linearity of response for the detection of gallic acid normally used as the standard probe for

  10. Mobile Alternative Fueling Station Locator

    SciTech Connect

    Not Available

    2009-04-01

    The Department of Energy's Alternative Fueling Station Locator is available on-the-go via cell phones, BlackBerrys, or other personal handheld devices. The mobile locator allows users to find the five closest biodiesel, electricity, E85, hydrogen, natural gas, and propane fueling sites using Google technology.

  11. Educational Attainment and Residential Location

    ERIC Educational Resources Information Center

    Sander, William

    2006-01-01

    The effects of residential location at age 16 and current residential location on measures of educational attainment are estimated. Particular attention is given to the effects of migration and family background on educational outcomes. It is shown that central cities and suburbs of large metropolitan areas in the United States have significantly…

  12. Locating Information within Extended Hypermedia

    ERIC Educational Resources Information Center

    Cromley, Jennifer G.; Azevedo, Roger

    2009-01-01

    New literacies researchers have identified a core set of strategies for locating information, one of which is "reading a Web page to locate information that might be present there" (Leu et al. in: Rush, Eakle, Berger (eds) "Secondary school reading and writing: What research reveals for classroom practices," 2007, p. 46). Do middle-school, high…

  13. Locative Terms and Warlpiri Acquisition.

    ERIC Educational Resources Information Center

    Bavin, Edith L.

    1990-01-01

    Focuses on the influence of language specific properties in the acquisition of locative expressions. Some of the claims from literature on the acquisition of locative expressions are discussed and data from the acquisition of Warlpiri are presented and discussed in terms of these claims. (Author/CB)

  14. Pan-information Location Map

    NASA Astrophysics Data System (ADS)

    Zhu, X. Y.; Guo, W.; Huang, L.; Hu, T.; Gao, W. X.

    2013-11-01

    A huge amount of information, including geographic, environmental, socio-economic, personal and social network information, has been generated from diverse sources. Most of this information exists separately and is disorderly even if some of it is about the same person, feature, phenomenon or event. Users generally need to collect related information from different sources and then utilize them in applications. An automatic mechanism, therefore, for establishing a connection between potentially-related information will profoundly expand the usefulness of this huge body of information. A connection tie is semantic location describing semantically concepts and attributes of locations as well as relationships between locations, since 80% of information contains some kind of geographic reference but not all of geographic reference has explicit geographic coordinates. Semantic location is an orthogonal form of location representation which can be represented as domain ontology or UML format. Semantic location associates various kinds of information about a same object to provide timely information services according to users' demands, habits, preferences and applications. Based on this idea, a Pan-Information Location Map (PILM) is proposed as a new-style 4D map to associates semantic location-based information dynamically to organize and consolidate the locality and characteristics of corresponding features and events, and delivers on-demand information with a User-Adaptive Smart Display (UASD).

  15. Precision zero-home locator

    DOEpatents

    Stone, William J.

    1986-01-01

    A zero-home locator includes a fixed phototransistor switch and a moveable actuator including two symmetrical, opposed wedges, each wedge defining a point at which switching occurs. The zero-home location is the average of the positions of the points defined by the wedges.

  16. Precision zero-home locator

    DOEpatents

    Stone, W.J.

    1983-10-31

    A zero-home locator includes a fixed phototransistor switch and a moveable actuator including two symmetrical, opposed wedges, each wedge defining a point at which switching occurs. The zero-home location is the average of the positions of the points defined by the wedges.

  17. Readily synthesized dopant-free hole transport materials with phenol core for stabilized mixed perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Xue, Yuyuan; Wu, Ying; Li, Yuan

    2017-03-01

    With the dramatic development of the power conversion efficiency (PCE) of perovskite solar cells (PVSCs), device lifetime has become one of the extensive research interests and concerns. To enhance the device durability, developing high performance dopant-free hole transport materials (HTMs) is a promising strategy. Herein, two new C3-symmetric HTMs with phenol core, TCP-OH and TCP-OC8 are readily prepared and show ultra-wide energy band-gap and excellent film-formation property. PCEs of 16.97% and 15.28% are achieved with pristine TCP-OH and TCP-OC8 film as HTMs, respectively, even though their hole mobilities are as low as 10-6 cm2 V-1 s-1. Phenol acts as hole trap in traditional concept, however, TCP-OH shows higher hole mobility than that of TCP-OC8. Moreover, TCP-OH shows higher glass transition temperature and better matching band alignment than those of TCP-OC8. Phenol shows great potential as building block for HTMs as it is beneficial to enhance hole mobility of HTMs. Moreover, our study demonstrates an interesting viewpoint to design HTMs with the balance of hole mobility and electron blocking effect.

  18. Effect of dopant compensation on the temperature dependence of the transport properties in p-type monocrystalline silicon

    SciTech Connect

    Veirman, J.; Martel, B.; Dubois, S.; Stendera, J.

    2014-02-28

    In this paper, we investigate the temperature variations of the hole transport properties in initially uncompensated boron-doped Czochralski silicon progressively compensated through thermal donors activation. After each donor generation anneal, the boron and thermal donor concentrations in the samples are determined using (1) the change in carrier concentration at room temperature and (2) the analysis of the temperature variation of the carrier concentration in the range 77–350 K. By comparing both methods with theory, evidence is brought that down to 77 K the Hall factor is unaffected by compensation up to high compensation levels. This is of great interest for researchers working on new solar-grade materials since it nicely suggests that Hall factor models previously established for non-compensated silicon can be applied to compensated samples, for example, when extracting the individual dopant concentrations from the temperature variations of the hole concentration. At very high compensation levels, anomalous Hall data lead to erroneously low carrier mobility values. We showed that this artifact was due to the formation of a n-p-n transistor, arising from the preferential formation of thermal donors in the sample's subsurface. After rejecting these unphysical data from the analysis, we confirm that the hole mobility is greatly affected by compensation in the temperature range investigated. We eventually confront our experimental data to current mobility models and discuss the possible sources of discrepancy.

  19. Room temperature optical image storage devices based on novel photo-responsive chiral azobenzene liquid crystal dopants

    NASA Astrophysics Data System (ADS)

    Chen, Si; Chen, Yining; Tong, Xiaoqian; Wu, Bozhen; Ma, Meng; Shi, Yanqin; Wang, Xu

    2016-11-01

    A room temperature optical image storage device based on a novel kind of chiral azobenzene liquid crystal compound (Azo-CC) dopant was reported in this paper, which could realize room temperature photocatalytic phase transition when doping in host liquid crystal E7. With a comparation of the referential achiral compound (Azo-ACC), the chemical structure, liquid crystalline and photoresponsive properties of the compounds were characterized by 1H-NMR, POM and UV-vis, respectively. The result showed that the compound with chiral group (Azo-CC) exhibited better photoresponsive properties than the referential achiral compound (Azo-ACC), indicating the introduction of chiral group is the key factor to provide E7 host room temperature photosensitive properties, which could not only made the liquid crystal molecular reoriented but also could change the whole nematic host liquid crystal to helical-twisted matrix. In addition, to understand the optical-switching behavior into detail, the photoisomerization dynamics of the systems o was also analyzed.

  20. Dopant Studies in the BaCe0.9-xZrxY0.103- System

    NASA Technical Reports Server (NTRS)

    Zhong, Zhimin; Sayir, Ali; Dynys, Fred; Heimann, Paula

    2003-01-01

    Protonic separation membranes for the hydrogen industry require thermo-chemical stability and high conductance. The perovskite BaCe0.9Y0.1O3- exhibits excellent proton conduction at high temperatures, but shows poor thermo-chemical tability. Substituting Zr for Ce in BaZr0.9Y0.1O3- improves the thermo-chemical stability but reduces proton conduction. The objective of this work was to study the optimization of protonic conductance and thermo-chemical by changing the ratio of Ce to Zr in BaCe0.9-xZrxY0.1O3-. To elucidate the dopant effect, co-precipitation method has been developed to produce single phase perovskites of composition BaCe0.9-xZrxY0.1O3- (0=x=0.9). The co-precipitation method has been optimized to yield high purity and homogeneous powders with a particle size of 100-200 nm in diameter. The sintering characteristics were studied in temperature range of 1400-1600 C. The effect of Zr substitution on sintering behavior and thermo-chemical stability will be reported.

  1. Effect of acid dopants in biodegradable gel polymer electrolyte and the performance in an electrochemical double layer capacitor

    NASA Astrophysics Data System (ADS)

    Sudhakar, Y. N.; Selvakumar, M.; Krishna Bhat, D.

    2015-09-01

    Proton-conducting biodegradable gellan gum gel polymer electrolytes (GPEs) have been prepared using three different dopants, namely ortho-phosphoric (o-H3PO4), sulfuric (H2SO4) and hydrochloric acids (HCl). The GPEs were cross-linked using borax. The polymeric gels were characterized by spectroscopic, thermal, ionic conductivities and dielectric measurements. Proton conductivity was in the range of 5.1 × 10-3 to 3.7 × 10-4 s cm-1 and activation energies were between 0.14 meV and 0.19 meV, at different temperatures. Among the doped acids, the H3PO4 doped GPE exhibited thermal stability at varying temperature. Electrochemical double layer capacitors (EDLCs) were fabricated using activated carbon as electrode material and GPEs. The EDLCs were tested using cyclic voltammetry, ac impedance spectroscopic and galvanostatic charge-discharge techniques. The maximum specific capacitance value was 146 F g-1 at a scan rate of 2 mV s-1. Quite stable values were obtained at a constant current density up to 1000 cycles.

  2. The dopant type and amount governs the electrochemical performance of graphene platforms for the antioxidant activity quantification.

    PubMed

    Hui, Kai Hwee; Ambrosi, Adriano; Sofer, Zdeněk; Pumera, Martin; Bonanni, Alessandra

    2015-05-21

    Graphene doped with heteroatoms can show new or improved properties as compared to the original undoped material. It has been reported that the type of heteroatoms and the doping conditions can have a strong influence on the electronic and electrochemical properties of the resulting material. Here, we wish to compare the electrochemical behavior of two n-type and two p-type doped graphenes, namely boron-doped graphenes and nitrogen-doped graphenes containing different amounts of heteroatoms. We show that the boron-doped graphene containing a higher amount of dopants provides the best electroanalytical performance in terms of calibration sensitivity, selectivity and linearity of response for the detection of gallic acid normally used as the standard probe for the quantification of antioxidant activity of food and beverages. Our findings demonstrate that the type and amount of heteroatoms used for the doping have a profound influence on the electrochemical detection of gallic acid rather than the structural properties of the materials such as amounts of defects, oxygen functionalities and surface area. This finding has a profound influence on the application of doped graphenes in the field of analytical chemistry.

  3. Influence of Nd dopant amount on microstructure and photoluminescence of TiO2:Nd thin films

    NASA Astrophysics Data System (ADS)

    Wojcieszak, Damian; Mazur, Michal; Kaczmarek, Danuta; Morgiel, Jerzy; Zatryb, Grzegorz; Domaradzki, Jaroslaw; Misiewicz, Jan

    2015-10-01

    TiO2 and TiO2:Nd thin films were deposited using reactive magnetron sputtering process from mosaic Ti-Nd targets with various Nd concentration. The thin films were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectroscopic techniques. Photoluminescence (PL) in the near infrared obtained upon 514.5 nm excitation was also examined. The relationship between the Nd concentration, structural, optical and photoluminescence properties of prepared thin films was investigated and discussed. XRD and TEM measurements showed that an increase in the Nd concentration in the thin films hinders the crystal growth in the deposited coatings. Depending on the Nd amount in the thin films, TiO2 with the rutile, mixed rutile-amorphous or amorphous phase was obtained. Transmittance measurements revealed that addition of Nd dopant to titania matrix did not deteriorate optical transparency of the coatings, however it influenced on the position of the fundamental absorption edge and therefore on the width of optical band gap energy. All TiO2:Nd thin films exhibited PL emission that occurred at ca. 0.91, 1.09 and 1.38 μm. Finally, results obtained for deposited coatings showed that titania with the rutile structure and 1.0 at.% of Nd was the most efficient in VIS to NIR photon conversion.

  4. Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method

    SciTech Connect

    Tsukamoto, Takahiro; Suda, Yoshiyuki; Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki

    2013-10-21

    The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 Ω cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

  5. Effects of added dopants on various triboluminescent properties of europium dibenzoylmethide triethylammonium (EuD4TEA)

    NASA Astrophysics Data System (ADS)

    Owens, Constance; Fontenot, Ross S.; Bhat, Kamala N.; Aggarwal, Mohan D.

    2014-03-01

    A triboluminescent (TL) material is one that emits light upon pressure, impact, friction, or mechanical shock. TL materials are desirable for investigation because they have the potential to be used as the active element for smart impact sensors. While the material europium dibenzoylmethide triethylammonium (EuD4TEA) produces a TL emission yield that can be observed by the naked eye, it is still not sufficiently bright for use in smart sensor devices. Previous studies have shown that additional materials can be combined with EuD4TEA in order to improve the TL emission yield. In this paper, we discuss the effects of doping on EuD4TEA at different concentrations with a variety of materials on the TL emission yield and decay times. The dopants that were used in this study were nicotine, dibutyl phosphate (DBP), and magnesium. We also discuss both the effects of pH on EuD4TEA, and the doping effects on impact energy. For testing triboluminescent properties, we use a custom-built drop tower that generates triboluminescence by fracturing compounds through impact. Collected data is analyzed using specially written LabVIEW programs.

  6. Dopant distribution in a Tm(3+)-Yb(3+) codoped silica based glass ceramic: an infrared-laser induced upconversion study.

    PubMed

    Lahoz, F; Martin, I R; Mendez-Ramos, J; Nunez, P

    2004-04-01

    The optically active dopant distribution in a Tm(3+)-Yb(3+) doped silica based glass ceramic sample has been investigated. A systematic analysis of the upconversion fluorescence of the Tm(3+)-Yb(3+) codoped glass and glass ceramic has been performed at room temperature. Tm(3+) and Yb(3+) single doped glass and glass ceramics have also been included in the study. Upon infrared excitation at 790 nm into the (3)H(4) level of the Tm(3+) ions a blue upconversion emission is observed, which is drastically increased in the Yb(3+) codoped samples. A rate equation model confirmed the energy transfer upconversion mechanism. Based on these results, the temporal dynamic curves of the levels involved in the upconversion process, (3)H(4), (2)F(5/2), and (1)G(4) were interpreted in the glass ceramic samples. The contribution of the optically active Tm(3+) and Yb(3+) ions in the crystalline and in the vitreous phase of the glass ceramic was distinguished and the ratio of Tm(3+) ions in the crystalline phase could be quantified for the 1 mol % Tm(3+)-2.5 mol % Yb(3+) glass ceramic. A surprising result was obtained for that concentration: the main contribution to the upconversion emission of the glass ceramic is due to Tm(3+)-Yb(3+) ions in the vitreous phase.

  7. Evaluation of river pollution of neonicotinoids in Osaka City (Japan) by LC/MS with dopant-assisted photoionisation.

    PubMed

    Yamamoto, Atsushi; Terao, Tomoko; Hisatomi, Hirotaka; Kawasaki, Hideya; Arakawa, Ryuichi

    2012-08-01

    An atmospheric pressure photoionisation (APPI) source for liquid chromatography/mass spectrometry (LC/MS) was applied to determine neonicotinoid pesticides in the aquatic environment. Dopant-assisted APPI was very effective in the ionisation of neonicotinoids. Neonicotinoids generated protonated molecules in APPI with high sensitivity, while adduct ions, such as sodiated molecules, were predominantly generated in conventional electrospray ionisation. The ionisation of neonicotinoids was confirmed by ultra-high-resolution MS. An analytical method coupled with solid phase extraction was developed for acetamiprid, clothianidin, dinotefuran, imidacloprid, nitenpyram, and thiamethoxam. Method detection limits were 0.47 to 2.1 ng L(-1) for six neonicotinoids. Dinotefuran was the most frequent and highest among the neonicotinoids examined in the aquatic environment in Osaka, Japan. The maximum concentration of dinotefuran was 220 ng L(-1). Given the toxicity of neonicotinoids for aquatic creatures, the concentrations observed here were substantially low. The change in concentrations was temporally coincident with the period of the neonicotinoid application. Although rapid photodegradation and some degradation products have been elucidated, the degradation products in the aquatic environment were not identified in the present study.

  8. Fe dopant in ZnO: 2+ versus 3+ valency and ion-carrier s ,p -d exchange interaction

    NASA Astrophysics Data System (ADS)

    Papierska, J.; Ciechan, A.; Bogusławski, P.; Boshta, M.; Gomaa, M. M.; Chikoidze, E.; Dumont, Y.; Drabińska, A.; Przybylińska, H.; Gardias, A.; Szczytko, J.; Twardowski, A.; Tokarczyk, M.; Kowalski, G.; Witkowski, B.; Sawicki, K.; Pacuski, W.; Nawrocki, M.; Suffczyński, J.

    2016-12-01

    Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient approximation (GGA+U ) indicate that the Fe ion is a relatively shallow donor. Its stable charge state is Fe2 + in ideal ZnO, however, the high energy of the (+/0) transition level enhances the compensation of Fe2 + to Fe3 + by nonintentional acceptors in real samples. Using several experimental methods like electron paramagnetic resonance, magnetometry, conductivity, excitonic magnetic circular dichroism, and magnetophotoluminescence we confirm the 3+ valency of the iron ions in polycrystalline (Zn,Fe)O films with the Fe content attaining 0.2%. We find a predicted increase of n -type conductivity upon the Fe doping with the Fe donor ionization energy of 0.25 ±0.02 eV consistent with the results of theoretical considerations. Moreover, our magneto-optical measurements confirm the calculated nonvanishing s,p-d exchange interaction between band carriers and localized magnetic moments of the Fe3 + ions in the ZnO, being so far an unsettled issue.

  9. Growth of n-doped GaAs nanowires by Au-assisted metalorganic chemical vapor deposition: effect of flux rates of n-type dopants

    NASA Astrophysics Data System (ADS)

    Guo, Jingwei; Huang, Hui; Liu, Minjia; Ren, Xiaomin; Cai, Shiwei; Wang, Wei; Wang, Qi; Huang, Yongqing; Zhang, Xia

    2010-12-01

    N-doped GaAs nanowires (NWs) were grown on GaAs (111) B substrate by means of vapor-liquid-solid (VLS) mechanism in a metalorganic chemical vapor deposition (MOCVD) system. Two flux rates of n-type dopants used for GaAs NWs growth were researched. For comparison, undoped GaAs NWs were grown at the same conditions. It is found that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux rates of n dopant. It is observed that there is Gibbs-Thomson effect in doped NWs. Pure zinc blende structures without any stacking faults from bottom to top for all three samples were achieved.

  10. Observation of Fine Distribution of Minor Dopants in an Erbium-Doped Fiber Core using a Sample Thinning Technique for Field Emission Electron Probe Microanalysis.

    PubMed

    Kubo, Yugo; Kuramochi, Koji

    2015-12-01

    To observe the fine distribution of minor aluminum and germanium dopants in the erbium-doped fiber (EDF) core of an optical amplifier, a sample thinning technique was applied for field emission electron probe microanalysis (FE-EPMA) together with wavelength-dispersive X-ray spectrometry. This technique significantly improved the spatial resolution without much degradation of the minimum detection limit for FE-EPMA. As such, this enabled us to observe the distribution of minor dopants in EDF. Moreover, we propose a very simple sample preparation to prevent electron-beam radiation damage, a problem involved with FE-EPMA of low-conductivity materials such as SiO2 glass, which is the main component of EDF.

  11. Optically band-tunable color cone lasing emission in a dye-doped cholesteric liquid crystal with a photoisomerizable chiral dopant

    NASA Astrophysics Data System (ADS)

    Lee, C.-R.; Lin, S.-H.; Ku, H.-S.; Liu, J.-H.; Yang, P.-C.; Huang, C.-Y.; Yeh, H.-C.; Ji, T.-D.

    2010-03-01

    This work demonstrates the feasibility of an optically band-tunable color cone lasing emission (CCLE) based on a dye-doped cholesteric liquid crystal with a photoisomerizable chiral dopant. Experimental results indicate that the lasing band of the formed CCLE can be tuned optically among various color regions by adjusting the UV irradiated fluence. The optical band tunability of the laser is attributed to the presence of two chiral agents with twisting powers of opposite signs in the cell and the UV-irradiation-induced decrease of the right-handed twisting power of the photoisomerizable chiral dopant via trans →cis isomerization, subsequently inducing the other chiral agent to reduce the structural pitch of the cell. Total tunable wavelength range of the laser exceeds 100 nm. Moreover, the band-tunable laser exhibits a high spectral stability under illumination of a visible light or thermal treatment.

  12. Experiences with information locator services

    USGS Publications Warehouse

    Christian, E.

    1999-01-01

    Over the last few years, governments and other organizations have been using new technologies to create networked Information Locator Services that help people find information resources. These services not only enhance access to information, but also are designed to support fundamental information policy principles. This article relates experiences in developing and promoting services interoperable with the Global Information Locator Service standard that has now been adopted and promoted in many forums worldwide. The article describes sample implementations and touches on the strategic choices made in public policy, standards, and technology. Ten recommendations are offered for successful implementation of an Information Locator Service. Published by Elsevier Science Ltd. All rights reserved.

  13. Three-dimensional analysis of Eu dopant atoms in Ca-α-SiAlON via through-focus HAADF-STEM imaging.

    PubMed

    Saito, Genki; Yamaki, Fuuta; Kunisada, Yuji; Sakaguchi, Norihito; Akiyama, Tomohiro

    2017-01-31

    Three-dimensional (3D) distributional analysis of individual dopant atoms in materials is important to development of optical, electronic, and magnetic materials. In this study, we adopted through-focus high-angle annular dark-field (HAADF) imaging for 3D distributional analysis of Eu dopant atoms in Ca-α-SiAlON phosphors. In this context, the effects of convergence semi-angle and Eu z-position on the HAADF image contrast were investigated. Multi-slice image simulation revealed that the contrast of the dopant site was sensitive to change of the defocus level. When the defocus level matched the depth position of a Eu atom, the contrast intensity was significantly increased. The large convergence semi-angle greatly increased the depth resolution because the electron beam tends spread instead of channeling along the atomic columns. Through-focus HAADF-STEM imaging was used to analyze the Eu atom distribution surrounding 10nm cubes with defocus steps of 0.68nm each. The contrast depth profile recorded with a narrow step width clearly analyzed the possible depth positions of Eu atoms. The radial distribution function obtained for the Eu dopants was analyzed using an atomic distribution model that was based on the assumption of random distribution. The result suggested that the Ca concentration did not affect the Eu distribution. The decreased fraction of neighboring Eu atoms along z-direction might be caused by the enhanced short-range Coulomb-like repulsive forces along the z-direction.

  14. A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

    NASA Astrophysics Data System (ADS)

    Ha, Thi Dep; Bao, JingFu

    2016-04-01

    Phononic crystals (PnCs) and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q) as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young's modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1) a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2) influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps) compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

  15. Neural correlates of locative prepositions.

    PubMed

    Noordzij, Matthijs L; Neggers, Sebastiaan F W; Ramsey, Nick F; Postma, Albert

    2008-04-01

    Locative prepositions might be special linguistic modifiers because they form a natural link between verbal and visual-spatial information. In the present fMRI study we found evidence that understanding categorical spatial relations expressed in language with locative prepositions such as "to the left of" and "to the right of" were reliably associated with cerebral activity in the supramarginal gyrus (SMG) located in the left inferior parietal lobe. The higher activity associated with spatial as compared to non-spatial sentences in this region was not dependent on the context (verbal or visual-spatial) in which the sentence was read. Therefore, the function of this activity appears to be to create a general, amodal representation of locative prepositions that allow for flexible comparisons to either verbal or visual-spatial material.

  16. Locative inferences in medical texts.

    PubMed

    Mayer, P S; Bailey, G H; Mayer, R J; Hillis, A; Dvoracek, J E

    1987-06-01

    Medical research relies on epidemiological studies conducted on a large set of clinical records that have been collected from physicians recording individual patient observations. These clinical records are recorded for the purpose of individual care of the patient with little consideration for their use by a biostatistician interested in studying a disease over a large population. Natural language processing of clinical records for epidemiological studies must deal with temporal, locative, and conceptual issues. This makes text understanding and data extraction of clinical records an excellent area for applied research. While much has been done in making temporal or conceptual inferences in medical texts, parallel work in locative inferences has not been done. This paper examines the locative inferences as well as the integration of temporal, locative, and conceptual issues in the clinical record understanding domain by presenting an application that utilizes two key concepts in its parsing strategy--a knowledge-based parsing strategy and a minimal lexicon.

  17. Determinants of first practice location

    PubMed Central

    Raghavan, Malathi; Fleisher, William; Downs, Allan; Martin, Bruce; Sandham, J. Dean

    2012-01-01

    Abstract Objective To help understand physician movement out of Manitoba by determining the factors that influence Manitoba medical graduates’ choices about practice locations. Design Cross-sectional, within-stage, mixed-model survey. Setting Manitoba. Participants All University of Manitoba medical graduates from classes 1998 to 2009 for whom we had valid contact information (N = 912 of 943 graduates) were invited in August 2009 to participate in a survey. Main outcome measures Demographic information; ratings, on a 5-point scale, of the importance when choosing first practice locations of 12 practice characteristics, 3 recruitment strategies, and 4 location characteristics listed in the survey; free-text narratives on unlisted factors; and estimates of likely practice location upon completion of training for recent graduates still in residency training. Results Completed surveys were received from 331 (35.1%) graduates of the surveyed classes, 162 (53.3%) of whom chose Manitoba for their first practice location. Multiple regression analyses indicated that graduates choosing Manitoba for their first practice location were significantly more likely to have done their residency training in Manitoba (P < .05), whether or not they gave a high rating to the importance of being near family and friends. Also, graduates choosing Manitoba were significantly more likely to be recent graduates (P = .007) and less likely to be members of a visible minority (P = .018). These associations were robust even when analyses were restricted to responses from practitioners without cause to estimate practice locations. Early self-selection of graduates during entry into specific residency programs, results of the residency match process, and “putting down roots” during residency years were 3 important interrelated themes identified through qualitative analyses. Conclusion Residency education in Manitoba is the overwhelming factor influencing graduates’ choice of Manitoba as

  18. The novel dopant for hole-transporting material opens a new processing route to efficiently reduce hysteresis and improve stability of planar perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Luo, Junsheng; Jia, Chunyang; Wan, Zhongquan; Han, Fei; Zhao, Bowen; Wang, Ruilin

    2017-02-01

    Perovskite solar cells (PSCs) emerging as the most promising next-generation photovoltaic devices have been received great attention. In the PSC device, admittedly, Spiro-OMeTAD is the most widely used hole-transporting material (HTM). However, the pristine Spiro-OMeTAD suffers from low hole mobility and conductivity, which requires chemical dopants (Li-TFSI and tBP) to increase conductivity thereby improving power conversion efficiency (PCE). Discouragingly, hygroscopic Li-TFSI can gravely degrade the perovskite film and diminish the stability of PSC. Meanwhile, tBP also gives rise to the degradation of perovskite film by forming a [PbI2·tBP] coordinated complex or iodopyridinate complex. In this study, F4-TCNQ is introduced into Spiro-OMeTAD as an alternative dopant to replace the commonly used Li-TFSI and tBP. By optimizing the doping concentration of F4-TCNQ, the PSC based on 1.5 mol% F4-TCNQ doped Spiro-OMeTAD exhibits the best PCE as high as 12.93%, which is comparable to that of 14.32% for reference device with Li-TFSI and tBP doped Spiro-OMeTAD. Moreover, the PSC based on F4-TCNQ doped Spiro-OMeTAD shows lower hysteresis and better stability. This work not only offers a promising dopant for Spiro-OMeTAD, but also provides a viable approach to address the challenges of hysteresis and instability.

  19. Enhanced visible-light absorption and dopant distribution of iodine-TiO{sub 2} nanoparticles synthesized by a new facile two-step hydrothermal method

    SciTech Connect

    Hong Xiaoting; Luo Zhiping; Batteas, James D.

    2011-08-15

    In order to prepare visible-light responsive iodine-doped TiO{sub 2}, a new facile synthetic approach was proposed, which started with the cost-efficient and environmentally friendly precursor of undoped anatase TiO{sub 2} to form nanotube structures as templates that collapsed and recrystallized into I-TiO{sub 2} nanopowders in HIO{sub 3} solution, followed by annealing at different temperatures. The modification of TiO{sub 2} to incorporate iodine and form titanium dioxide with significantly enhanced absorption in the visible range of the spectrum was investigated. The extent of iodine dopant incorporation was determined by X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray analysis (EDX) and was found to be homogenously distributed on each nanostructure as determined by electron energy-loss spectroscopy (EELS) elemental mapping and EDX spectroscopy. The modified TiO{sub 2} exhibits a dramatically extended absorption edge beyond 800 nm as compared to the original and unmodified TiO{sub 2}. - Graphical abstract: As-synthesized I-TiO{sub 2} nanoparticles show significantly enhanced visible-light absorption, with the dopant iodine homogenously dispersed on each I-TiO{sub 2} nanostructure based on EELS elemental mapping. Highlights: > Iodine-TiO{sub 2} nanoparticles by a new facile two-step hydrothermal method. > Significantly enhanced light absorption in the visible range of the spectrum. > Homogenous dopant distribution within each nanostructure.

  20. Structures and properties of La- and Sm-doped BaTiO3 sputtered films: Post-annealing and dopant effects

    NASA Astrophysics Data System (ADS)

    Wu, C. H.; Chu, J. P.; Chang, W. Z.; John, V. S.; Wang, S. F.; Lin, C. H.

    2008-01-01

    200-nm-thick La- and Sm-doped BaTiO3 thin films with A /B ratio of unity fabricated by magnetron sputtering on the Pt /Ti/SiO2/Si substrate have been characterized. The effects of post-annealing and the amount of dopant on structure and electrical properties were studied. X-ray diffraction studies reveal that the films annealed at 750°C show tetragonal BaTiO3 crystal structure without any detectable second phase formation. X-ray photoelectron spectroscopy results confirm that La substitutes the A site and Sm is in the B site in lightly doped films. La2O3 or Sm2O3 is present in the BaTiO3 structure when the dopant content is more than 1.4at.% La or 1.0% Sm. The permittivity increases with increasing annealing temperature up to 750°C due to the coarse grains and better crystallinity. The leakage current property is found to vary with the type of dopant.

  1. Formation of the dopant-oxygen vacancy complexes and its influence on the photoluminescence emissions in Gd-doped HfO{sub 2}

    SciTech Connect

    Wang, L. G.; Tu, H. L.; Xiong, Y. H.; Du, J.; Wang, J. W.; Huang, G. J.; Xiao, W.

    2014-09-28

    Rare earth doping is widely used to improve the desired properties of high-k dielectric oxides. However, whether rare earth doping can suppress the formation of oxygen vacancies is still debated. By using the first-principles calculations with the generalized gradient approximation and more advanced hybrid functional, we have investigated the structural and electronic properties of the dopant-oxygen vacancy complexes in Gd-doped HfO{sub 2}. Our calculations indicate that the Gd dopants interacting with oxygen vacancies can substantially shift up the V{sub O} energy states towards the conduction band edge. This together with other effects, such as capturing the localized electrons at the oxygen vacancy by Gd dopants and suppressing the randomicity of oxygen vacancy formation, improves the reliability of the devices made from Gd-doped HfO{sub 2}. Based on our calculated results, we have presented an explanation for the experimentally observed decrease of the V{sub O}-related photoluminescence intensities upon Gd doping in HfO{sub 2}.

  2. Dopants to enhance SOFC cathodes based on Sr-doped LaFeO 3 and LaMnO 3

    NASA Astrophysics Data System (ADS)

    Bidrawn, F.; Kim, G.; Aramrueang, N.; Vohs, J. M.; Gorte, R. J.

    The influence of various infiltrated dopants on the performance of solid oxide fuel cell (SOFC) cathodes was examined. The cathodes were prepared by infiltration of nitrate salts into porous yttria-stabilized zirconia (YSZ) to produce composites with 40-wt% of either La 0.8Sr 0.2FeO 3 (LSF) or La 0.8Sr 0.2MnO 3 (LSM) and were then calcined to either 1123 or 1373 K. The addition of dopants had little influence on the 1123-K composite electrodes but all dopants tested improved the performance of the 1373-K composites. With 1373-K, LSF-YSZ electrodes, the open-circuit impedances decreased dramatically following the addition of 10-wt% YSZ, 0.5-wt% Pd, 10-wt% Ce 0.8Sm 0.2O 1.9 (SDC), 10-wt% CaO, and 10-wt% K 2O. Similarly, the 1373-K, LSM-YSZ electrodes were enhanced by the addition of 10-wt% CeO 2, 1-wt% Pd, and 10-wt% YSZ. Since the improved performance was close to that of the corresponding LSF-YSZ and LSM-YSZ electrodes that had been calcined to only 1123 K, it is suggested that the improved performance is related to structural changes in the electrode, rather than to improved catalytic properties or ionic conductivity.

  3. Locative terms and Warlpiri acquisition.

    PubMed

    Bavin, E L

    1990-02-01

    Cognitive complexity and complexity of linguistic structure have been found to influence the order of acquisition of locatives. In Warlpiri, locative terms are nominals and they are used in combination with a locative case marker on the reference object; directional affixes may be added to them. Data from a series of tests of Warlpiri children's comprehension and production of the Warlpiri expressions that may be translated as 'in', 'on', 'under', 'in front of', 'behind' and 'between' indicate that the locative case forms are used first without the more specific locative nominals; young children distinguish an 'up-down' dimension but not 'in', and the reference object influences how the locative term is interpreted; kamparru-pirdangirli ('front-behind') is not one dimension for children aged four to five years; kulkurru 'between' is understood before kamparru 'front' and pirdangirli 'behind'; the use of features on a reference object for orientation develops at around six, but the orientation of the reference object, as well as features on the placed object may affect interpretation.

  4. Inherent room temperature ferromagnetism and dopant dependent Raman studies of PbSe, Pb{sub 1−x}Cu{sub x}Se, and Pb{sub 1−x}Ni{sub x}Se

    SciTech Connect

    Gayner, Chhatrasal; Kar, Kamal K.

    2015-03-14

    Polycrystalline lead selenide (PbSe) doped with copper (Cu) and nickel (Ni) was prepared to understand its magnetic behaviour and Raman activity. The processing conditions, influence of dopants (magnetically active and non-active) and their respective compositions on the magnetic properties and Raman active mode were studied. A surprising/anomalous room temperature ferromagnetism (hysteresis loop) is noticed in bulk diamagnetic PbSe, which is found to be natural or inherent characteristic of material, and depends on the crystallite size, dopant, and developed strain due to dopant/defects. The magnetic susceptibility (−1.71 × 10{sup −4} emu/mol Oe) and saturated magnetic susceptibility (−2.74 × 10{sup −4} emu/mol Oe) are found to be higher than the earlier reported value (diamagnetic: −1.0 × 10{sup −4} emu/mol Oe) in bulk PbSe. With increase of Cu concentration (2% to 10%) in PbSe, the saturated magnetic susceptibility decreases from −1.22 × 10{sup −4} to −0.85 × 10{sup −4} emu/mol Oe. Whereas for Ni dopant, the saturated magnetic susceptibility increases to −2.96 × 10{sup −4} emu/mol Oe at 2% Ni doped PbSe. But it further decreases with dopant concentration. In these doped PbSe, the shifting of longitudinal (LO) phonon mode was also studied by the Raman spectroscopy. The shifting of LO mode is found to be dopant dependent, and the frequency shift of LO mode is associated with the induced strain that created by the dopants and vacancies. This asymmetry in LO phonon mode (peak shift and shape) may be due to the intraband electronic transition of dopants. The variation in magnetic susceptibility and Raman shifts are sensitive to crystallite size, nature of dopant, concentration of dopants, and induced strain due to dopants.

  5. Improved integrated sniper location system

    NASA Astrophysics Data System (ADS)

    Figler, Burton D.; Spera, Timothy J.

    1999-01-01

    In July of 1995, Lockheed Martin IR Imaging Systems, of Lexington, Massachusetts began the development of an integrated sniper location system for the Defense Advanced Research Projects Agency and for the Department of the Navy's Naval Command Control & Ocean Surveillance Center, RDTE Division in San Diego, California. The I-SLS integrates acoustic and uncooled infrared sensing technologies to provide an affordable and highly effective sniper detection and location capability. This system, its performance and results from field tests at Camp Pendleton, California, in October 1996 were described in a paper presented at the November 1996 SPIE Photonics East Symposium1 on Enabling Technologies for Law Enforcement and Security. The I-SLS combines an acoustic warning system with an uncooled infrared warning system. The acoustic warning system has been developed by SenTech, Inc., of Lexington, Massachusetts. This acoustic warning system provides sniper detection and coarse location information based upon the muzzle blast of the sniper's weapon and/or upon the shock wave produced by the sniper's bullet, if the bullet is supersonic. The uncooled infrared warning system provides sniper detection and fine location information based upon the weapon's muzzle flash. In addition, the uncooled infrared warning system can provide thermal imagery that can be used to accurately locate and identify the sniper. Combining these two technologies improves detection probability, reduces false alarm rate and increases utility. In the two years since the last report of the integrated sniper location system, improvements have been made and a second field demonstration was planned. In this paper, we describe the integrated sniper location system modifications in preparation for the new field demonstration. In addition, fundamental improvements in the uncooled infrared sensor technology continue to be made. These improvements include higher sensitivity (lower minimum resolvable temperature

  6. Locating the LCROSS Impact Craters

    NASA Technical Reports Server (NTRS)

    Marshall, William; Shirley, Mark; Moratto, Zachary; Colaprete, Anthony; Neumann, Gregory A.; Smith, David E.; Hensley, Scott; Wilson, Barbara; Slade, Martin; Kennedy, Brian; Gurrola, Eric; Harcke, Leif

    2012-01-01

    The Lunar CRater Observations and Sensing Satellite (LCROSS) mission impacted a spent Centaur rocket stage into a permanently shadowed region near the lunar south pole. The Sheperding Spacecraft (SSC) separated approx. 9 hours before impact and performed a small braking maneuver in order to observe the Centaur impact plume, looking for evidence of water and other volatiles, before impacting itself. This paper describes the registration of imagery of the LCROSS impact region from the mid- and near-infrared cameras onboard the SSC, as well as from the Goldstone radar. We compare the Centaur impact features, positively identified in the first two, and with a consistent feature in the third, which are interpreted as a 20 m diameter crater surrounded by a 160 m diameter ejecta region. The images are registered to Lunar Reconnaisance Orbiter (LRO) topographical data which allows determination of the impact location. This location is compared with the impact location derived from ground-based tracking and propagation of the spacecraft's trajectory and with locations derived from two hybrid imagery/trajectory methods. The four methods give a weighted average Centaur impact location of -84.6796 deg, -48.7093 deg, with a 1s uncertainty of 115 m along latitude, and 44 m along longitude, just 146 m from the target impact site. Meanwhile, the trajectory-derived SSC impact location is -84.719 deg, -49.61 deg, with a 1 alpha uncertainty of 3 m along the Earth vector and 75 m orthogonal to that, 766 m from the target location and 2.803 km south-west of the Centaur impact. We also detail the Centaur impact angle and SSC instrument pointing errors. Six high-level LCROSS mission requirements are shown to be met by wide margins. We hope that these results facilitate further analyses of the LCROSS experiment data and follow-up observations of the impact region

  7. On the redox reactivity of doped UO2 pellets - Influence of dopants on the H2O2 decomposition mechanism

    NASA Astrophysics Data System (ADS)

    Pehrman, Reijo; Trummer, Martin; Lousada, Cláudio M.; Jonsson, Mats

    2012-11-01

    The reactivity of doped UO2 such as SIMFUEL, Y2O3 doped UO2 and Y2O3/Pd doped UO2 towards H2O2 has been shown to be fairly similar to that of pure UO2. However, the oxidative dissolution yield, i.e. the ratio between the amount of dissolved uranium and the amount of consumed H2O2 is significantly lower for doped UO2. The rationale for the observed differences in dissolution yield is a difference in the ratio between the rates of the two possible reactions between H2O2 and the doped UO2. In this work we have studied the effect of doping on the two possible reactions, electron-transfer and catalytic decomposition. The catalytic decomposition was studied by monitoring the hydroxyl radical production (the primary product) as a function of time. The redox reactivity of the doped pellets was studied by using MnO4- and IrCl62- as model oxidants, only capable of electron-transfer reactions with the pellets. In addition, the activation energies for oxidation of UO2 and SIMFUEL by MnO4- were determined experimentally. The experiments show that the rate of catalytic decomposition of H2O2 varies by 30% between the most and least reactive material. This is a negligible difference compared to the difference in oxidative dissolution yield. The redox reactivity study shows that doping UO2 influences the redox reactivity of the pellet. This is further illustrated by the observed activation energy difference for oxidation of UO2 and SIMFUEL by MnO4-. The redox reactivity study also shows that the sensitivity to dopants increases with decreasing reduction potential of the oxidant. These findings imply that the relative impact of radiolytic oxidants in oxidative dissolution of spent nuclear fuel must be reassessed taking the actual fuel composition into account.

  8. Heparin dopant increases the electrical stability, cell adhesion, and growth of conducting polypyrrole/poly(L,L-lactide) composites.

    PubMed

    Meng, Shiyun; Rouabhia, Mahmoud; Shi, Guixin; Zhang, Ze

    2008-11-01

    Polypyrrole (PPy) is a promising conductive polymer for tissue engineering and bioelectrical applications. However, its electrical conductivity deteriorates easily in aqueous conditions. Cell adhesion to PPy is also relatively poor. The goal of this study was to simultaneously improve the electrical stability of and cell adhesion to PPy by using heparin (HE) as dopant, for HE is both a polyanion and an important glycosaminoglycan in cell membranes and extracellular matrix. PPy particles doped with HE were synthesized through emulsion polymerization using Fenton's reagent as an oxidant. X-ray photoelectron spectroscopy (XPS), infrared and scanning electron microscopy (SEM) were used to investigate the PPy particles. Conductive biodegradable membranes of 10(2) to 10(3) Omega/square were prepared from 5% (w) PPy with various amounts of HE and 95% (w) poly(L,L-lactide) (PPy/PLLA). Azure A staining was employed to quantify the HE exposed on the surface of the PPy particles and PPy/PLLA membranes. The distribution of HE on membranes was demonstrated by DAPI staining. Results showed that HE was incorporated into the PPy particles as counterions and presented on particle surface. A unique "filament"-like morphology of the PPy preparation was observed at high-HE content. The electrical stability of the PPy/PLLA membranes was tested in saline at 37 degrees C for 500 h. Human skin fibroblasts were used to test the cell adhesion capacity. The conductive membranes containing HE-doped PPy particles recorded significantly increased electrical stability, cell adhesion, and growth. The electrically more stable and cell adhesive conductive biodegradable membrane may act as a platform for various biomedical applications.

  9. Dopant-Free All-Back-Contact Si Nanohole Solar Cells Using MoOx and LiF Films.

    PubMed

    Um, Han-Don; Kim, Namwoo; Lee, Kangmin; Hwang, Inchan; Seo, Ji Hoon; Seo, Kwanyong

    2016-02-10

    We demonstrate novel all-back-contact Si nanohole solar cells via the simple direct deposition of molybdenum oxide (MoOx) and lithium fluoride (LiF) thin films as dopant-free and selective carrier contacts (SCCs). This approach is in contrast to conventionally used high-temperature thermal doping processes, which require multistep patterning processes to produce diffusion masks. Both MoOx and LiF thin films are inserted between the Si absorber and Al electrodes interdigitatedly at the rear cell surfaces, facilitating effective carrier collection at the MoOx/Si interface and suppressed recombination at the Si and LiF/Al electrode interface. With optimized MoOx and LiF film thickness as well as the all-back-contact design, our 1 cm(2) Si nanohole solar cells exhibit a power conversion efficiency of up to 15.4%, with an open-circuit voltage of 561 mV and a fill factor of 74.6%. In particular, because of the significant reduction in Auger/surface recombination as well as the excellent Si-nanohole light absorption, our solar cells exhibit an external quantum efficiency of 83.4% for short-wavelength light (∼400 nm), resulting in a dramatic improvement (54.6%) in the short-circuit current density (36.8 mA/cm(2)) compared to that of a planar cell (23.8 mA/cm(2)). Hence, our all-back-contact design using MoOx and LiF films formed by a simple deposition process presents a unique opportunity to develop highly efficient and low-cost nanostructured Si solar cells.

  10. Processing locational and orientational information.

    PubMed

    Maki, R H; Maki, W S; Marsh, L G

    1977-09-01

    In choice reaction time (RT) tasks, college students verified the truth of displays expressing spatial relations between two objects. The relations werelocational (A is left of B) ororientational (A and B are horizontal). The objects were names of states in the United States, symbols, or letter arrays. The objects were memorized prior to the display (states and letters) or were presented as part of the display (symbols and letters). In the location tasks with both states and symbols, locatives were spatial (right, left, above, below) or compass (north, south, east, west). Distance between states was also varied. When location was judged, horizontally aligned stimuli resulted in slower responses than vertically aligned stimuli, independently of materials and locative set. Reaction time was inversely related to distance. When orientation was judged, responses to horizontal pairs of states were slower than responses to vertical pairs of states, responses to horizontal pairs of letters were faster than responses to vertical pairs, and RT did not depend upon the orientation of symbols. This pattern of results suggests that orientational judgments are influenced by type of materials and the entext to which the material has been encoded (i.e., memorized). Locational judgments reflect a potent source of difficulty not present in orientation tasks, namely, telling left from right. Alternative explanations of the right-left effect are discussed.

  11. URLs: Uniform Resource Locators or Unreliable Resource Locators.

    ERIC Educational Resources Information Center

    Germain, Carol Anne

    2000-01-01

    This research studies the accessibility of 64 URLs (Uniform Resource Locators) cited in 31 academic journal articles. Discusses the role of citations as scholarly links and examines results of this longitudinal study that found an increasing decline in the availability of URL citations to World Wide Web sties. (Contains 22 references.) (Author/LRW)

  12. Wireless Damage Location Sensing System

    NASA Technical Reports Server (NTRS)

    Woodard, Stanley E. (Inventor); Taylor, Bryant Douglas (Inventor)

    2012-01-01

    A wireless damage location sensing system uses a geometric-patterned wireless sensor that resonates in the presence of a time-varying magnetic field to generate a harmonic response that will experience a change when the sensor experiences a change in its geometric pattern. The sensing system also includes a magnetic field response recorder for wirelessly transmitting the time-varying magnetic field and for wirelessly detecting the harmonic response. The sensing system compares the actual harmonic response to a plurality of predetermined harmonic responses. Each predetermined harmonic response is associated with a severing of the sensor at a corresponding known location thereof so that a match between the actual harmonic response and one of the predetermined harmonic responses defines the known location of the severing that is associated therewith.

  13. Neuroanatomical correlates of locative prepositions.

    PubMed

    Tranel, Daniel; Kemmerer, David

    2004-10-01

    Very little research has explored which neural systems may be important for retrieving the meanings of locative prepositions (e.g., in, on, around). To begin to address this knowledge gap, we conducted a lesion study in which we tested the hypothesis that processing the meanings of locative prepositions depends on neural structures in the left inferior prefrontal cortex and left inferior parietal cortex. Seventy-eight subjects with focal, stable lesions to various parts of the telencephalon and a comparison group of 60 normal participants were studied with tasks that require production, comprehension, and semantic analysis of locative prepositions. In support of our hypothesis, we found that in subjects with impaired knowledge of locative prepositions, the highest region of lesion overlap was in the left frontal operculum and the left supramarginal gyrus, and in the white matter subjacent to these two areas. In a second study, focused on six subjects who had pervasive defects for locative preposition knowledge, we confirmed that such defects were associated specifically with damage to the posterior left frontal operculum, white matter subjacent to this region, and white matter underneath the inferior parietal operculum. These subjects did not have basic impairments in spatial processing or working memory, and they had relatively well-preserved processing of conceptual knowledge for actions and various categories of concrete entities (e.g., persons, animals, tools). All six subjects, however, had defects in naming actions, and some of them also had defective naming of some categories of concrete entities. Overall, the findings converge nicely with recent results from functional imaging approaches, and with classic studies from the aphasia-based literature, and suggest that the left inferior prefrontal and left inferior parietal regions have crucial-albeit not exclusive-roles in processing knowledge associated with locative prepositions.

  14. Synchronized sampling improves fault location

    SciTech Connect

    Kezunovic, M.; Perunicic, B.

    1995-04-01

    Transmission line faults must be located accurately to allow maintenance crews to arrive at the scene and repair the faulted section as soon as possible. Rugged terrain and geographical layout cause some sections of power transmission lines to be difficult to reach. In the past, a variety of fault location algorithms were introduced as either an add-on feature in protective relays or stand-alone implementation in fault locators. In both cases, the measurements of current and voltages were taken at one terminal of a transmission line only. Under such conditions, it may become difficult to determine the fault location accurately, since data from other transmission line ends are required for more precise computations. In the absence of data from the other end, existing algorithms have accuracy problems under several circumstances, such as varying switching and loading conditions, fault infeed from the other end, and random value of fault resistance. Most of the one-end algorithms were based on estimation of voltage and current phasors. The need to estimate phasors introduces additional difficulty in high-speed tripping situations where the algorithms may not be fast enough in determining fault location accurately before the current signals disappear due to the relay operation and breaker opening. This article introduces a unique concept of high-speed fault location that can be implemented either as a simple add-on to the digital fault recorders (DFRs) or as a stand-alone new relaying function. This advanced concept is based on the use of voltage and current samples that are synchronously taken at both ends of a transmission line. This sampling technique can be made readily available in some new DFR designs incorporating receivers for accurate sampling clock synchronization using the satellite Global Positioning System (GPS).

  15. Location Technologies for Apparel Assembly

    DTIC Science & Technology

    1991-09-01

    LOCATION TECHNOLOGIES FOR - APPAREL ASSEMBLY! *AD-A241 60 𔃿U iI iI ll I / ! II!’I ’II IBy: Wayne C. Tincher Douglas M. Moore Wayne Daley GEORGIA...lassifi cation) Location Technologies for Apparel Assembly 12. PERSONAL AUTHOR(S( Tincher, Wayne C.; MOore, Douglas M..; Daley, Wzyne 13a TYPE OF...COSATi CODES 18 SIBJECT TERMS (Continue on rev’erse if neceisary and todentify by block number) FIELD GROUP SUB-GROUP 13 08 Apparel , AtmioMachine Vision

  16. Dopant Cylinder Lifetime Monitor

    NASA Astrophysics Data System (ADS)

    Bishop, Steve; Wodjenski, Michael; Kaim, Robert; Lurcott, Steve; McManus, Jim; Smith, Gordon

    2006-11-01

    The cost of consumable materials is a significant component in the cost of implanter operation. With the higher cost of sub-atmospheric gas alternatives it is increasingly important to accurately monitor its usage. The ATMI® SDS® GasGauge™ monitoring system accurately monitors gas level in four cylinders simultaneously, throughout their lifetime, in order to optimize usage of gas and related implanter productivity. This paper displays how the GasGauge monitoring system accurately monitors the cylinder contents in SDS®, VAC® and high pressure gas cylinders. Internal and customer test data is also presented to verify these claims.

  17. Predictors of Rural Practice Location

    ERIC Educational Resources Information Center

    Kegel-Flom, Penelope

    1977-01-01

    Attitudes toward the urban environment and place of origin were found to be the best predictors of an optometrist's practice location. Findings of this study imply that optometry students most likely to enter rural practice can be objectively identified early in their training and that the predictive equation presented may be useful in the…

  18. LOCATING LEAKS WITH ACOUSTIC TECHNOLOGY

    EPA Science Inventory

    Many water distribution systems in this country are almost 100 years old. About 26 percent of piping in these systems is made of unlined cast iron or steel and is in poor condition. Many methods that locate leaks in these pipes are time-consuming, costly, disruptive to operations...

  19. Source Identification and Location Techniques

    NASA Technical Reports Server (NTRS)

    Weir, Donald; Bridges, James; Agboola, Femi; Dougherty, Robert

    2001-01-01

    Mr. Weir presented source location results obtained from an engine test as part of the Engine Validation of Noise Reduction Concepts program. Two types of microphone arrays were used in this program to determine the jet noise source distribution for the exhaust from a 4.3 bypass ratio turbofan engine. One was a linear array of 16 microphones located on a 25 ft. sideline and the other was a 103 microphone 3-D "cage" array in the near field of the jet. Data were obtained from a baseline nozzle and from numerous nozzle configuration using chevrons and/or tabs to reduce the jet noise. Mr. Weir presented data from two configurations: the baseline nozzle and a nozzle configuration with chevrons on both the core and bypass nozzles. This chevron configuration had achieved a jet noise reduction of 4 EPNdB in small scale tests conducted at the Glenn Research Center. IR imaging showed that the chevrons produced significant improvements in mixing and greatly reduced the length of the jet potential core. Comparison of source location data from the 1-D phased array showed a shift of the noise sources towards the nozzle and clear reductions of the sources due to the noise reduction devices. Data from the 3-D array showed a single source at a frequency of 125 Hz. located several diameters downstream from the nozzle exit. At 250 and 400 Hz., multiple sources, periodically spaced, appeared to exist downstream of the nozzle. The trend of source location moving toward the nozzle exit with increasing frequency was also observed. The 3-D array data also showed a reduction in source strength with the addition of chevrons. The overall trend of source location with frequency was compared for the two arrays and with classical experience. Similar trends were observed. Although overall trends with frequency and addition of suppression devices were consistent between the data from the 1-D and the 3-D arrays, a comparison of the details of the inferred source locations did show differences. A

  20. Earthquake location in island arcs

    USGS Publications Warehouse

    Engdahl, E.R.; Dewey, J.W.; Fujita, K.

    1982-01-01

    A comprehensive data set of selected teleseismic P-wave arrivals and local-network P- and S-wave arrivals from large earthquakes occurring at all depths within a small section of the central Aleutians is used to examine the general problem of earthquake location in island arcs. Reference hypocenters for this special data set are determined for shallow earthquakes from local-network data and for deep earthquakes from combined local and teleseismic data by joint inversion for structure and location. The high-velocity lithospheric slab beneath the central Aleutians may displace hypocenters that are located using spherically symmetric Earth models; the amount of displacement depends on the position of the earthquakes with respect to the slab and on whether local or teleseismic data are used to locate the earthquakes. Hypocenters for trench and intermediate-depth events appear to be minimally biased by the effects of slab structure on rays to teleseismic stations. However, locations of intermediate-depth events based on only local data are systematically displaced southwards, the magnitude of the displacement being proportional to depth. Shallow-focus events along the main thrust zone, although well located using only local-network data, are severely shifted northwards and deeper, with displacements as large as 50 km, by slab effects on teleseismic travel times. Hypocenters determined by a method that utilizes seismic ray tracing through a three-dimensional velocity model of the subduction zone, derived by thermal modeling, are compared to results obtained by the method of joint hypocenter determination (JHD) that formally assumes a laterally homogeneous velocity model over the source region and treats all raypath anomalies as constant station corrections to the travel-time curve. The ray-tracing method has the theoretical advantage that it accounts for variations in travel-time anomalies within a group of events distributed over a sizable region of a dipping, high

  1. It's All about Location, Location, Location: Children's Memory for the "Where'' of Personally Experienced Events

    ERIC Educational Resources Information Center

    Bauer, Patricia J.; Doydum, Ayzit O.; Pathman, Thanujeni; Larkina, Marina; Guler, O. Evren; Burch, Melissa

    2012-01-01

    Episodic memory is defined as the ability to recall specific past events located in a particular time and place. Over the preschool and into the school years, there are clear developmental changes in memory for when events took place. In contrast, little is known about developmental changes in memory for where events were experienced. In the…

  2. Location, Location, Location: How Would a High-Performing Charter School Network Fare in Different States?

    ERIC Educational Resources Information Center

    Lozier, Chris; Rotherham, Andrew J.

    2011-01-01

    In this paper the authors do not examine different operating strategies for charter schools or analyze the impact of their often educationally intensive models on finance. Instead, because public charter schools are funded predominantly by public dollars, they simply ask what impact location--and its associated variances in public funding and the…

  3. Cholesterol's location in lipid bilayers

    SciTech Connect

    Marquardt, Drew; Kučerka, Norbert; Wassall, Stephen R.; Harroun, Thad A.; Katsaras, John

    2016-04-04

    It is well known that cholesterol modifies the physical properties of lipid bilayers. For example, the much studied liquid-ordered Lo phase contains rapidly diffusing lipids with their acyl chains in the all trans configuration, similar to gel phase bilayers. Moreover, the Lo phase is commonly associated with cholesterol-enriched lipid rafts, which are thought to serve as platforms for signaling proteins in the plasma membrane. Cholesterol's location in lipid bilayers has been studied extensively, and it has been shown – at least in some bilayers – to align differently from its canonical upright orientation, where its hydroxyl group is in the vicinity of the lipid–water interface. In this study we review recent works describing cholesterol's location in different model membrane systems with emphasis on results obtained from scattering, spectroscopic and molecular dynamics studies.

  4. Antarctic Meteorite Location Map Series

    NASA Technical Reports Server (NTRS)

    Schutt, John (Editor); Fessler, Brian (Editor); Cassidy, William (Editor)

    1989-01-01

    Antarctica has been a prolific source of meteorites since meteorite concentrations were discovered in 1969. The Antarctic Search For Meteorites (ANSMET) project has been active over much of the Trans-Antarctic Mountain Range. The first ANSMET expedition (a joint U.S.-Japanese effort) discovered what turned out to be a significant concentration of meteorites at the Allan Hills in Victoria Land. Later reconnaissance in this region resulted in the discovery of meteorite concentrations on icefields to the west of the Allan Hills, at Reckling Moraine, and Elephant Moraine. Antarctic meteorite location maps (reduced versions) of the Allan Hills main, near western, middle western, and far western icefields and the Elephant Moraine icefield are presented. Other Antarctic meteorite location maps for the specimens found by the ANSMET project are being prepared.

  5. Unexpected location of pilonidal sinuses.

    PubMed

    Sion-Vardy, N; Osyntsov, L; Cagnano, E; Osyntsov, A; Vardy, D; Benharroch, D

    2009-12-01

    Pilonidal sinuses usually occur in the sacrococcygeal area in young men, and occasionally can be found in other ectopic sites. We present a retrospective case review on unusual locations of pilonidal sinuses in the past 4 years. The lesion sites were as follows: one on the penis, two on the scalp, two on the abdomen, one on the neck, two in the groin and two in the axilla. Abdominal and penile lesions are uncommon, but the other locations reported are unusually rare. To our knowledge, the groin has not been reported previously as a site of a pilonidal sinus, although the histological appearance of hidradenitis suppurativa may well resemble it. When trying to clarify the pathogenesis of these occurrences, we found that recurrent hair removal was a common characteristic of the patients we contacted, and this may have been the initiating trauma.

  6. The choice of practice location

    PubMed Central

    Butler, J. R.; Knight, Rose

    1975-01-01

    A ten per cent sample survey of all general practitioners in England and Wales in 1969-70 included two questions about the choice of practice location. The most common reasons given were the absence of any real alternatives (in the immediate post-war period), the influence of family or friends, the existence of medical contacts in the area, and favourable points about the practice itself. In considering possible future moves, general practitioners would pay closest attention to the educational facilities of an area, its rural or coastal location, its social and cultural amenities, and the practice conditions. The conclusion is drawn that financial incentives are unlikely to contribute much towards a more equal distribution of general-practitioner manpower. More thought should be given to recruitment to the medical profession in under-doctored areas through the development of the highest professional standards and facilities in such places. PMID:1195223

  7. Cholesterol's location in lipid bilayers

    DOE PAGES

    Marquardt, Drew; Kučerka, Norbert; Wassall, Stephen R.; ...

    2016-04-04

    It is well known that cholesterol modifies the physical properties of lipid bilayers. For example, the much studied liquid-ordered Lo phase contains rapidly diffusing lipids with their acyl chains in the all trans configuration, similar to gel phase bilayers. Moreover, the Lo phase is commonly associated with cholesterol-enriched lipid rafts, which are thought to serve as platforms for signaling proteins in the plasma membrane. Cholesterol's location in lipid bilayers has been studied extensively, and it has been shown – at least in some bilayers – to align differently from its canonical upright orientation, where its hydroxyl group is in themore » vicinity of the lipid–water interface. In this study we review recent works describing cholesterol's location in different model membrane systems with emphasis on results obtained from scattering, spectroscopic and molecular dynamics studies.« less

  8. Location Privacy in RFID Applications

    NASA Astrophysics Data System (ADS)

    Sadeghi, Ahmad-Reza; Visconti, Ivan; Wachsmann, Christian

    RFID-enabled systems allow fully automatic wireless identification of objects and are rapidly becoming a pervasive technology with various applications. However, despite their benefits, RFID-based systems also pose challenging risks, in particular concerning user privacy. Indeed, improvident use of RFID can disclose sensitive information about users and their locations allowing detailed user profiles. Hence, it is crucial to identify and to enforce appropriate security and privacy requirements of RFID applications (that are also compliant to legislation). This chapter first discusses security and privacy requirements for RFID-enabled systems, focusing in particular on location privacy issues. Then it explores the advances in RFID applications, stressing the security and privacy shortcomings of existing proposals. Finally, it presents new promising directions for privacy-preserving RFID systems, where as a case study we focus electronic tickets (e-tickets) for public transportation.

  9. Computer Model Locates Environmental Hazards

    NASA Technical Reports Server (NTRS)

    2008-01-01

    Catherine Huybrechts Burton founded San Francisco-based Endpoint Environmental (2E) LLC in 2005 while she was a student intern and project manager at Ames Research Center with NASA's DEVELOP program. The 2E team created the Tire Identification from Reflectance model, which algorithmically processes satellite images using turnkey technology to retain only the darkest parts of an image. This model allows 2E to locate piles of rubber tires, which often are stockpiled illegally and cause hazardous environmental conditions and fires.

  10. Potential Crash Location (PCL) Model

    DTIC Science & Technology

    2014-02-05

    UNCLASSIFIED AD NUMBER LIMITATION CHANGES TO: FROM: AUTHORITY THIS PAGE IS UNCLASSIFIED ADB383242 Approved for public release; distribution is...model; Sensis model 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT 18. NUMBER OF PAGES 19a. NAME OF RESPONSIBLE PERSON...approach to defining the outer limits . This report also discusses two different approaches to modeling rotor craft UAS crash locations. NAWCADPAX/TR

  11. Improved Event Location Uncertainty Estimates

    DTIC Science & Technology

    2008-06-30

    model (such as Gaussian, spherical or exponential) typically used in geostatistics, we define the robust variogram model as the median regression curve...variogram model estimation We define the robust variogram model as the median regression curve of the residual difference squares for station pairs of...develop methodologies that improve location uncertainties in the presence of correlated, systematic model errors and non-Gaussian measurement errors. We

  12. Unusually located primary hydatid cysts

    PubMed Central

    Aksakal, Nihat; Kement, Metin; Okkabaz, Nuri; Altuntaş, Yunus Emre; Öncel, Mustafa

    2016-01-01

    The hydatid disease caused by Echinococcus granulosus is an endemic parasitic disease affecting several Mediterranean countries. Echinococcal cysts are mostly located in the liver and the lung, but the disease can be detected anywhere in the body. In this study, we present uncommon extrahepatic localizations of primary hydatid disease. Patients who were operated on for hydatid disease or cystic lesions, which were later diagnosed as hydatid disease, between 2004 and 2010 were retrieved retrospectively. Patients with lesions localized outside the liver and the lung were enrolled in the study. Eight patients with extrahepatic primary hydatid disease were treated surgically at our clinic. The cysts were located in the scapular region, spleen, pancreas, lumbosacral region and gluteal muscle. Surgical techniques were partial or total cystectomy with or without tube drainage. Splenectomy was performed for splenic hydatid disease and partial pericystectomy, Roux-en-Y cystojejunostomy, cholecystectomy and T-tube drainage for pancreatic hydatid disease. There were no complications or mortality in the postoperative period. Hydatid cyst should be considered in the differential diagnosis of cystic lesions, especially in endemic areas. Surgical technique should be planned according to the location of the cyst. PMID:27436938

  13. The effect of Ta dopant on the electronic and optical properties of anatase TiO2: a first-principles study

    NASA Astrophysics Data System (ADS)

    Muhammady, Shibghatullah; Nurfani, Eka; Kurniawan, Robi; Magdalena Sutjahja, Inge; Winata, Toto; Darma, Yudi

    2017-02-01

    We study the electronic and optical properties of pure and Ta-doped anatase TiO2 structures using a plane-wave-based first-principles calculation. The pure anatase TiO2 has an indirect band gap of 2.76 eV, while the Ta-doped anatase TiO2 is a metal. Zero-energy dielectric constants of 4.02 and 3.48 were found for E || a and E || c, respectively, in the pure anatase TiO2. Based on the calculated imaginary parts of the dielectric function (ε 2), the pure anatase TiO2 has anisotropic interband transition edges of 2.75 eV and 3.55 eV for E || a and E || c respectively, which show an optical dichroism. The Ta-doped anatase TiO2 is found to have metallic behaviour, which is clearly observable through the significantly high electronic absorption in ε 2 at the zero energy level. However, the Ta-doped TiO2 also shows anisotropic interband transition edges of 2.55 eV and 3.45 eV for E || a and E || c, respectively, based on ε 2. Based on these results, Ta dopant plays an important role for the semiconductor-to-metallic transformation in anatase TiO2. At the same time, Ta dopant also promotes the red-shift of the interband transition edges and enhances the dichroism. This study presents the significant modification in the optical properties of anatase TiO2 due to the presence of Ta dopant based on the dielectric functions.

  14. Trend of the magnetic anisotropy for individual Mn dopants near the (1 1 0) GaAs surface.

    PubMed

    Mahani, M R; Pertsova, A; Canali, C M

    2014-10-01

    Using a microscopic finite-cluster tight-binding model, we investigate the trend of the magnetic anisotropy energy as a function of the cluster size for an individual Mn impurity positioned in the vicinity of the (1 1 0) GaAs surface. We present results of calculations for large cluster sizes containing approximately 10(4) atoms, which have not been investigated so far. Our calculations demonstrate that the anisotropy energy of a Mn dopant in bulk GaAs, found to be non-zero in previous tight-binding calculations, is purely a finite size effect that vanishes with inverse cluster size. In contrast to this, we find that the splitting of the three in-gap Mn acceptor energy levels converges to a finite value in the limit of the infinite cluster size. For a Mn in bulk GaAs this feature is related to the nature of the mean-field treatment of the coupling between the impurity and its nearest neighbor atoms. We also calculate the trend of the anisotropy energy in the sublayers as the Mn dopant is moved away from the surface towards the center of the cluster. Here the use of large cluster sizes allows us to position the impurity in deeper sublayers below the surface, compared to previous calculations. In particular, we show that the anisotropy energy increases up to the fifth sublayer and then decreases as the impurity is moved further away from the surface, approaching its bulk value. The present study provides important insights for experimental control and manipulation of the electronic and magnetic properties of individual Mn dopants at the semiconductor surface by means of advanced scanning tunneling microscopy techniques.

  15. Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species.

    PubMed

    Saleh, Navid B; Milliron, Delia J; Aich, Nirupam; Katz, Lynn E; Liljestrand, Howard M; Kirisits, Mary Jo

    2016-10-15

    Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics.

  16. Locating buildings in aerial photos

    NASA Technical Reports Server (NTRS)

    Green, James S.

    1994-01-01

    Algorithms and techniques for use in the identification and location of large buildings in digitized copies of aerial photographs are developed and tested. The building data would be used in the simulation of objects located in the vicinity of an airport that may be detected by aircraft radar. Two distinct approaches are considered. Most building footprints are rectangular in form. The first approach studied is to search for right-angled corners that characterize rectangular objects and then to connect these corners to complete the building. This problem is difficult because many nonbuilding objects, such as street corners, parking lots, and ballparks often have well defined corners which are often difficult to distinguish from rooftops. Furthermore, rooftops come in a number of shapes, sizes, shadings, and textures which also limit the discrimination task. The strategy used linear sequences of different samples to detect straight edge segments at multiple angles and to determine when these segments meet at approximately right-angles with respect to each other. This technique is effective in locating corners. The test image used has a fairly rectangular block pattern oriented about thirty degrees clockwise from a vertical alignment, and the overall measurement data reflect this. However, this technique does not discriminate between buildings and other objects at an operationally suitable rate. In addition, since multiple paths are tested for each image pixel, this is a time consuming task. The process can be speeded up by preprocessing the image to locate the more optimal sampling paths. The second approach is to rely on a human operator to identify and select the building objects and then to have the computer determine the outline and location of the selected structures. When presented with a copy of a digitized aerial photograph, the operator uses a mouse and cursor to select a target building. After a button on the mouse is pressed, with the cursor fully within

  17. Sintering of BaCe(0.85)Y(0.15)O3-(Beta) With/Without SrTiO Dopant

    NASA Technical Reports Server (NTRS)

    Dynys, Fred; Sayir, Ali; Heimann, Paula J.

    2004-01-01

    The sintering behavior of BaCe(0.85)Y(0.15)O3-(Beta) doped with SrTiO is described. Complete reaction and crystallization of perovskite phase by solid state was achieved by calcining at 1200 degrees C for 24 hours.Smaples were sintered at 1450 degrees C, 1550 degrees C, and 1650 degrees C. SrTiOsub3 enhanced sintering, while optimal dopant level was different for powders synthesized by solid state and co-precipitation. Both powders exhibit similar grain growth behavior.

  18. Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETS with Thin Gate Oxides

    NASA Technical Reports Server (NTRS)

    Asenov, Asen; Saini, S.

    2000-01-01

    In this paper for the first time we study the influence of the polysilicon gate on the random dopant induced threshold voltage fluctuations in sub 100 nm MOSFETs with tunnelling gate oxides. This is done by using an efficient 3D 'atomistic' simulation technique described elsewhere. Devices with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveale that the polysilicon gate is responsible for a substantial fraction of the threshold voltage fluctuations in both devices when the gate oxide is scaled to tunnelling thickness in the range of 1 - 2 nm.

  19. Universal non-Landau, self-organized, lattice disordering percolative dopant network sub-T(c) phase transition in ceramic superconductors.

    PubMed

    Phillips, J C

    2009-09-15

    Ceramic superconductors (cuprates, pnictides, etc.) exhibit universal features in both T(c)(max) and in their planar lattice disordering measured by EXAFS, as reflected by three phase transitions. The two highest temperature transitions are known to be associated with formation of Jahn-Teller pseudogaps and superconductive gaps, with corresponding Landau order parameters, but no new gap is associated with the third transition below T(c), and its origin is mysterious. It is argued that the third subT(c) transition is a dopant glass transition, which is remarkably similar to topological transitions previously observed in chalcogenide and oxide alloy network glasses (like window glass).

  20. The First Rule of Plant Transposable Element Silencing: Location, Location, Location

    PubMed Central

    Sigman, Meredith J.; Slotkin, R. Keith

    2016-01-01

    Transposable elements (TEs) are mobile units of DNA that comprise large portions of plant genomes. Besides creating mutations via transposition and contributing to genome size, TEs play key roles in chromosome architecture and gene regulation. TE activity is repressed by overlapping mechanisms of chromatin condensation, epigenetic transcriptional silencing, and targeting by small interfering RNAs. The specific regulation of different TEs, as well as their different roles in chromosome architecture and gene regulation, is specified by where on the chromosome the TE is located: near a gene, within a gene, in a pericentromere/TE island, or at the centromere core. In this Review, we investigate the silencing mechanisms responsible for inhibiting TE activity for each of these chromosomal contexts, emphasizing that chromosomal location is the first rule dictating the specific regulation of each TE. PMID:26869697

  1. Locating nuclear power plants underground.

    PubMed

    Scott, F M

    1975-01-01

    This paper reviews some of the questions that have been asked by experts and others as to why nuclear power plants are not located or placed underground. While the safeguards and present designs make such installations unnecessary, there are some definite advantages that warrant the additional cost involved. First of all, such an arrangement does satisfy the psychological concern of a number of people and, in so doing, might gain the acceptance of the public so that such plants could be constructed in urban areas of load centers. The results of these studies are presented and some of the requirements necessary for underground installations described, including rock conditions, depth of facilities, and economics.

  2. Method of locating ground faults

    NASA Astrophysics Data System (ADS)

    Patterson, Richard L.; Rose, Allen H.; Cull, Ronald C.

    1994-11-01

    The present invention discloses a method of detecting and locating current imbalances such as ground faults in multiwire systems using the Faraday effect. As an example, for 2-wire or 3-wire (1 ground wire) electrical systems, light is transmitted along an optical path which is exposed to magnetic fields produced by currents flowing in the hot and neutral wires. The rotations produced by these two magnetic fields cancel each other, therefore light on the optical path does not read the effect of either. However, when a ground fault occurs, the optical path is exposed to a net Faraday effect rotation due to the current imbalance thereby exposing the ground fault.

  3. New Location Improves Efficiency | Poster

    Cancer.gov

    By Nancy Parrish, Staff Writer The physical proximity of the SAIC-Frederick Intellectual Property (IP) Office to the NCI Technology Transfer Center (NCI-TTC) is one of the many benefits of being at the Advanced Technology Research Facility (ATRF), according to Courtney Silverthorn, Ph.D. Being in one location “has increased the effectiveness of both informal communication and formal meetings. We have already brainstormed solutions for several issues in the hallway during an informal chat,” said Silverthorn, an SAIC-Frederick IP specialist.

  4. Feature Identification and Location Experiment

    NASA Technical Reports Server (NTRS)

    Sivertson, W. E., Jr.; Wilson, R. G.; Bullock, G. F.; Schappell, R. T.

    1982-01-01

    The Feature Identification and Location Experiment (FILE), which was flown on the second Space Shuttle flight to test a technique for real-time, autonomous classification of water, vegetation and bare land as well as clouds, snow and ice, senses earth radiation in spectral bands centered at 0.65 and 0.85 microns. The radiance ratio classification algorithm has successfully made automatic data selection decisions. A classification image obtained on the mission is providing data needed to evaluate the FILE algorithm and overall system performance.

  5. Short range radio locator system

    DOEpatents

    McEwan, T.E.

    1996-12-31

    A radio location system comprises a wireless transmitter that outputs two megahertz period bursts of two gigahertz radar carrier signals. A receiver system determines the position of the transmitter by the relative arrival of the radar bursts at several component receivers set up to have a favorable geometry and each one having a known location. One receiver provides a synchronizing gating pulse to itself and all the other receivers. The rate of the synchronizing gating pulse is slightly offset from the rate of the radar bursts themselves, so that each sample collects one finely-detailed piece of information about the time-of-flight of the radar pulse to each receiver each pulse period. Thousands of sequential pulse periods provide corresponding thousand of pieces of information about the time-of-flight of the radar pulse to each receiver, in expanded, not real time. Therefore the signal processing can be done with relatively low-frequency, inexpensive components. A conventional microcomputer is then used to find the position of the transmitter by geometric triangulation based on the relative time-of-flight information. 5 figs.

  6. Short range radio locator system

    DOEpatents

    McEwan, Thomas E.

    1996-01-01

    A radio location system comprises a wireless transmitter that outputs two megahertz period bursts of two gigahertz radar carrier signals. A receiver system determines the position of the transmitter by the relative arrival of the radar bursts at several component receivers set up to have a favorable geometry and each one having a known location. One receiver provides a synchronizing gating pulse to itself and all the other receivers to sample the ether for the radar pulse. The rate of the synchronizing gating pulse is slightly offset from the rate of the radar bursts themselves, so that each sample collects one finely-detailed piece of information about the time-of-flight of the radar pulse to each receiver each pulse period. Thousands of sequential pulse periods provide corresponding thousand of pieces of information about the time-of-flight of the radar pulse to each receiver, in expanded, not real time. Therefore the signal processing can be done with relatively low-frequency, inexpensive components. A conventional microcomputer is then used to find the position of the transmitter by geometric triangulation based on the relative time-of-flight information.

  7. Effects of surface states, defects and dopants on the optical and magnetic properties of low-dimensional materials

    NASA Astrophysics Data System (ADS)

    Podila, Ramakrishna

    Nanomaterials have attracted the attention of researchers from various fields due to their unique features (that are otherwise absent in the bulk) such as quantum confinement, high surface to volume ratio, ability for surface modification etc. Since the discovery of fullerenes and carbon nanotubes, several synthesis techniques have been developed for nanomaterial growth. However, different control parameters in different synthesis techniques often result in nanostructures with varying defects that may alter their fundamental behavior. Such defects or disorder in the crystal lattice can lead to the disruption of lattice symmetry. The defect-induced symmetry lowering (or breaking) effects play a vital role in the determination of fundamental material characteristics. Thus, it is very important to characterize the defects in order to understand their effects on the nanomaterial properties. This thesis describes the effects of defects in low dimesional systems such as ZnO nanowires, graphene and carbon nanotubes are studied. Firstly, it describes the synthesis and characterization of ZnO nanostructures and discusses the effects of surface states, defects and dopants on their optical and magnetic properties. An unexpected presence of ferromagnetic (FM) ordering in nanostructured nonmagnetic metal oxides has been reported previously. Though this property was attributed to the presence of defects, systematic experimental and theoretical studies to pinpoint its origin and mechanism were lacking. While it is widely believed that oxygen vacancies are responsible for FM ordering, surprisingly annealing as-prepared samples at low temperature (high temperature) in flowing oxygen actually enhances (diminishes) the FM ordering. For these reasons, we have prepared, annealed in different environments, and measured the ensuing magnetization in micrometer and nanoscale ZnO with varying crystallinity. We further find from our magnetization measurements and ab-initio calculations that

  8. Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

    SciTech Connect

    Saha, D. E-mail: pmisra@rrcat.gov.in; Misra, P. E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M.; Das, Gangadhar

    2016-01-18

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.

  9. SiO2 and ZnO Dopants in 3D Printed TCP Scaffolds Enhances Osteogenesis and Angiogenesis in vivo

    PubMed Central

    Fielding, Gary; Bose, Susmita

    2013-01-01

    Calcium phosphate (CaP) scaffolds with three dimensionally (3D) interconnected pores play an important role in mechanical interlocking and biological fixation in bone implant applications. CaPs alone, however, are only osteoconductive (ability to guide bone growth). Much attention has been given to the incorporation of biologics and pharmacologics to add osteoinductive (ability to cause new bone growth) properties to CaP materials. Because biologics and pharmacologics are generally delicate compounds and also subject to increased regulatory scrutiny, there is a need to investigate alternative methods to introduce osteoinductivity to CaP materials. In this study silica (SiO2) and zinc oxide (ZnO) have been incorporated in to 3D printed β-tricalcium phosphate (TCP) scaffolds to investigate their potential to trigger osteoinduction in vivo. Silicon and zinc are trace elements that are common to bone and have also been shown to have many beneficial properties from increased bone regeneration to angiogenesis. Implants were placed in bicortical femur defects introduced to a murine model for up to 16 weeks. Addition of dopants into TCP increased the capacity for new early bone formation by modulating collagen I production and osteocalcin production. Neovascularization was found to be up to three times more than the pure TCP control group. The findings from this study indicate that the combination of SiO2 and ZnO dopants in TCP may be a viable alternative to introduce osteoinductive properties to CaPs. PMID:23871941

  10. Evaluation of dopants in hydrogen to reduce hydrogen permeation in candidate Stirling engine heater head tube alloys at 760 deg and 820 deg

    NASA Technical Reports Server (NTRS)

    Misencik, J. A.

    1982-01-01

    Alloy tubes filled with hydrogen doped with various amounts of carbon monoxide, carbon dioxide, ethane, ethylene, methane, ammonia, or water were heated in a diesel fuel-fired Stirling engine simulator materials test rig for 100 hours at 21 MPa and 760 or 820 C to determine the effectiveness of the dopants in reducing hydrogen permeation through the hot tube walls. Ultra high purity (UHP) hydrogen was used for comparison. The tube alloys were N-155, A-286, Incoloy 800, Nitronic 40, 19-9DL, 316 stainless steel, Inconel 718, and HS-188. Carbon dioxide and carbon monoxide in the concentration range 0.2 to 5 vol % were most effective in reducing hydrogen permeation through the hot tube walls for all alloys. Ethane, ethylene, methane, ammonia, and water at the concentrations investigated were not effective in reducing the permeation below that achieved with UHP hydrogen. One series of tests were conducted with UHP hydrogen in carburized tubes. Carburization of the tubes prior to exposure reduced permeation to values similar to those for carbon monoxide; however, carbon dioxide was the most effective dopant.

  11. Molecular structure identification and position of a dopant ion in diaqua(2,2‧-bipyridine)malonatozinc(II) by spectroscopic studies - II: VO(II)

    NASA Astrophysics Data System (ADS)

    Parthipan, Krishnan; Ramesh, Hema; Sambasiva Rao, P.

    2011-04-01

    Single crystal EPR, optical, FT-IR and powder XRD studies of VO(II) ion doped diaqua(2,2'-bipyridine) malonato zinc complex were carried out at room temperature to ascertain the structural properties. In EPR, the angular variation of vanadium hyperfine lines indicated a single site, with spin Hamiltonian parameters as: g xx = 1.968, g yy = 1.964, g zz = 1.928, A xx = 7.54 mT, A yy = 6.36 mT and A zz = 18.81 mT. In addition, the dopant had entered the lattice in an interstitial position and the position had been identified with the help of atom positions of the host lattice. The EPR and optical data was corroborated to obtain various bonding parameters, from which the nature of the bonding in the complex was discussed. FT-IR and powder XRD studies were used to observe the effect of dopant on structural parameters of the host lattice.

  12. Dopant activation in Sn-doped Ga{sub 2}O{sub 3} investigated by X-ray absorption spectroscopy

    SciTech Connect

    Siah, S. C. Brandt, R. E.; Jaramillo, R.; Buonassisi, T.; Lim, K.; Schelhas, L. T.; Toney, M. F.; Heinemann, M. D.; Chua, D.; Gordon, R. G.; Wright, J.; Segre, C. U.; Perkins, J. D.

    2015-12-21

    Doping activity in both beta-phase (β-) and amorphous (a-) Sn-doped gallium oxide (Ga{sub 2}O{sub 3}:Sn) is investigated by X-ray absorption spectroscopy (XAS). A single crystal of β-Ga{sub 2}O{sub 3}:Sn grown using edge-defined film-fed growth at 1725 °C is compared with amorphous Ga{sub 2}O{sub 3}:Sn films deposited at low temperature (<300 °C). Our XAS analyses indicate that activated Sn dopant atoms in conductive single crystal β-Ga{sub 2}O{sub 3}:Sn are present as Sn{sup 4+}, preferentially substituting for Ga at the octahedral site, as predicted by theoretical calculations. In contrast, inactive Sn atoms in resistive a-Ga{sub 2}O{sub 3}:Sn are present in either +2 or +4 charge states depending on growth conditions. These observations suggest the importance of growing Ga{sub 2}O{sub 3}:Sn at high temperature to obtain a crystalline phase and controlling the oxidation state of Sn during growth to achieve dopant activation.

  13. Probing the effect of dopants (donors) within InAs/InGaAs/InAlAs Asymmetric Heterostructure wafer by magneto-THz spectroscopy

    NASA Astrophysics Data System (ADS)

    Pakmehr, Mehdi; Heyn, Christian; Hansen, Wolfgang

    Probing the effect of impurities within semiconductor structures have been the topic of interest both from applied and scientific point of views. We studied the effect of dopants (donors) within InAs/InGaAs/InAlAs asymmetric heterostructure wafer by means of THz magneto-transmission (TR) spectroscopy, in conjunction with THz magneto-photoresponse (PR) spectroscopy. The sample wafer has been immersed in pumped liquid Helium at 1.6 K, while being exposed to sweeping magnetic field up to 10 Tesla, with THz laser beam (1.4 THz) being focused on sample by off-axis parabolic mirror. The transmitted beam was detected by silicon composite bolometer. Two broad absorption features other than sharp Cyclotron resonance (CR) absorption dip within magneto-TR signal attributed to 1s -->2P transition within donors of doped layer (InAlAs) in heterostructure. We plan to discuss the analysis of magneto-TR signal, in conjunction with Magneto-PR signals from Hall bar samples made from same type of wafer at same frequency to clarify how dopants could possibly alter these signals.

  14. Dopant spin states and magnetism of Sn{sub 1−x}Fe{sub x}O{sub 2} nanoparticles

    SciTech Connect

    Punnoose, A. Dodge, Kelsey; Reddy, K. M.; Franco, Nevil; Chess, Jordan; Eixenberger, Josh; Beltrán, J. J.; Barrero, C. A.

    2014-05-07

    This work reports detailed investigations of a series of ∼2.6 nm sized, Sn{sub 1−x}Fe{sub x}O{sub 2} crystallites with x = 0–0.10 using Mossbauer spectroscopy, x-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance spectroscopy (EPR), and magnetometry to determine the oxidation state of Fe dopants and their role in the observed magnetic properties. The magnetic moment per Fe ion μ was the largest ∼6.48 × 10{sup −3} μ{sub B} for the sample with the lowest (0.001%) Fe doping, and it showed a rapid downward trend with increasing Fe doping. Majority of the Fe ions are in 3+ oxidation state occupying octahedral sites. Another significant fraction of Fe dopant ions is in 4+ oxidation state and a still smaller fraction might be existing as Fe{sup 2+} ions, both occupying distorted sites, presumably in the surface regions of the nanocrystals, near oxygen vacancies. These studies also suggest that the observed magnetism is not due to exchange coupling between Fe{sup 3+} spins. A more probable role for the multi-valent Fe ions may be to act as charge reservoirs, leading to charge transfer ferromagnetism.

  15. Synthesis, characterization and luminescence of Sr{sub 3}Al{sub 2}O{sub 6} phosphor with trivalent rare earth dopant

    SciTech Connect

    Page, Pallavi; Ghildiyal, Rahul; Murthy, K.V.R. . E-mail: drmurthykvr@yahoo.com

    2006-10-12

    The luminescent properties of Sr{sub 3}Al{sub 2}O{sub 6} doped and co-doped with the rare earths (Ln{sup 3+} = Eu{sup 3+}, Dy{sup 3+}, Eu{sup 3+} and Dy{sup 3+}) have been studied. The material was synthesized by reflux method and fired up to 900 deg. C for 16 h. The X-ray diffraction pattern confirms that the synthesized material consists of Sr{sub 3}Al{sub 2}O{sub 6} as main phase. The photoluminescence study gives a clear evidence of europium stabilizing in trivalent form and surprisingly with no presence of europium in the divalent state. The addition of Dy{sup 3+} as co-dopant in the Sr{sub 3}Al{sub 2}O{sub 6}:Eu{sup 3+} matrix shows the quenching effect in the photoluminescence (PL) spectra. The photoluminescence intensity of Eu{sup 3+} falls gradually on increasing the concentration of the co-dopant in the range from 0.1 mole% to 2.0 mole%. The significantly intense thermoluminescence (TL) glow peak was obtained for Sr{sub 3}Al{sub 2}O{sub 6}:Eu{sup 3+}, Dy{sup 3+} (1% and 0.1%) at around 194 deg. C when irradiated with 10 kGy dose from Sr-90 {beta} source.

  16. Improvement of efficiency and colour purity of red-dopant organic light-emitting diodes by energy levels matching with the host materials

    NASA Astrophysics Data System (ADS)

    Chen, Baijun; Lin, Xiaoqin; Cheng, Laifung; Lee, Chun-sing; Gambling, William A.; Lee, Shuit-tong

    2001-01-01

    By using a series of tris-(8-hydroxyquinoline) metal chelates with central metal ions of Al3+, Ga3+, In3+ as the host materials, red organic light-emitting diodes have been fabricated, which used a red fluorescent dye, 4-(dicyanomethylene)-2-t-butyl-6-(8-methoxy-1,1,7,7-tetramethyljulolidyl- 9-enyl)4H-pyran (DCJMTB), as the emitter or guest dopant material. The doped devices with Gaq3 as the host materials produce high efficiencies and saturated red colour chromaticity. The device (1% DCJMTB doped in Gaq3) showed a current efficiency of 2.64 cd A-1, which is about 40% higher than that of the doped Alq3 device, and nearly two times higher than that of the doped Inq3 device at 1% DCJMTB dopant concentration. The colour coordinates of the Gaq3:1% DCJMTB device in the Commission internationale del'Eclairage chromaticity chart are x = 0.63 and y = 0.36.

  17. The effects of nonmetal dopants on the electronic, optical and chemical performances of monolayer g-C3N4 by first-principles study

    NASA Astrophysics Data System (ADS)

    Lu, S.; Li, C.; Li, H. H.; Zhao, Y. F.; Gong, Y. Y.; Niu, L. Y.; Liu, X. J.; Wang, T.

    2017-01-01

    Doping is an effective means to alter the electronic behavior of materials by forming new chemical bond and relaxing the surrounding chemical bonds. With the aid of first-principle studies, the effects of a series of nonmetal (NM) dopants on the geometric, thermodynamic, electronic and optical performances of monolayer g-C3N4 have been investigated. Results shown that, all considered NM atoms except Br and I atoms can be introduced into the monolayer g-C3N4 on account of the thermal stability, the supercell parameter and film thickness have been altered by the newly formed Csbnd NM bonds and the relaxed chemical bonds around them, which have affected their electronic structure. The band gap values were altered less than ±0.14 eV. The optical absorption edge (and intensity) in visible light of all doped specimens red-shift 10-75 nm (and increase about 14%-71%) except for O- and S-doped specimens, and thus the NM dopants can enhance the visible-light response capability. Moreover, the highest occupied molecular orbital and lowest unoccupied molecular orbital of H-, B-, O-, S-, F- and As-doped specimens have been separated adequately, it can effectively separate the photogenerated e-/h+ pairs and enhance the photocatalytic efficiency. Finally, we have confirmed six high efficiency monolayer g-C3N4 based photocatalysts by doping H, B, O, S, F and As atoms.

  18. Secure Location Provenance for Mobile Devices

    DTIC Science & Technology

    2015-07-01

    provenance records. The WORAL framework is based a secure asserted location proof protocol and location provenance preservation methods for generating...5 2.6 Secure Location Provenance Protocol ...6 Figure 2: Sequence diagram for WORAL protocol

  19. Map learning with indistinguishable locations

    NASA Technical Reports Server (NTRS)

    Basye, Kenneth; Dean, Thomas

    1989-01-01

    Nearly all spatial reasoning problems involve uncertainty of one sort or another. Uncertainty arises due to the inaccuracies of sensors used in measuring distances and angels. This is inferred as directional uncertainty. Uncertainty also arises in combining spatial information when one location is mistakenly identified with another. This is referred to as recognition uncertainty. Most problems in constructing spatial representations (maps) for the purpose of navigation involve both directional and recognition uncertainty. It is shown that a particular class of spatial reasoning problems involving the construction of representations of large-scale space can be solved efficiently even in the presence of directional and recognition uncertainty. Particular attention is paid to the problems that arise due to recognition uncertainty. The results described are applicable to the construction of global maps from satellite data as well as the construction of local navigation maps from measurements made by a rover in exploring a planetary surface.

  20. Estimating location without external cues.

    PubMed

    Cheung, Allen

    2014-10-01

    The ability to determine one's location is fundamental to spatial navigation. Here, it is shown that localization is theoretically possible without the use of external cues, and without knowledge of initial position or orientation. With only error-prone self-motion estimates as input, a fully disoriented agent can, in principle, determine its location in familiar spaces with 1-fold rotational symmetry. Surprisingly, localization does not require the sensing of any external cue, including the boundary. The combination of self-motion estimates and an internal map of the arena provide enough information for localization. This stands in conflict with the supposition that 2D arenas are analogous to open fields. Using a rodent error model, it is shown that the localization performance which can be achieved is enough to initiate and maintain stable firing patterns like those of grid cells, starting from full disorientation. Successful localization was achieved when the rotational asymmetry was due to the external boundary, an interior barrier or a void space within an arena. Optimal localization performance was found to depend on arena shape, arena size, local and global rotational asymmetry, and the structure of the path taken during localization. Since allothetic cues including visual and boundary contact cues were not present, localization necessarily relied on the fusion of idiothetic self-motion cues and memory of the boundary. Implications for spatial navigation mechanisms are discussed, including possible relationships with place field overdispersion and hippocampal reverse replay. Based on these results, experiments are suggested to identify if and where information fusion occurs in the mammalian spatial memory system.

  1. 43 CFR 3816.1 - Mineral locations.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 43 Public Lands: Interior 2 2012-10-01 2012-10-01 false Mineral locations. 3816.1 Section 3816.1..., DEPARTMENT OF THE INTERIOR MINERALS MANAGEMENT (3000) LANDS AND MINERALS SUBJECT TO LOCATION Mineral Locations in Reclamation Withdrawals § 3816.1 Mineral locations. The Act of April 23, 1932 (47 Stat. 136;...

  2. 43 CFR 3816.1 - Mineral locations.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 43 Public Lands: Interior 2 2011-10-01 2011-10-01 false Mineral locations. 3816.1 Section 3816.1..., DEPARTMENT OF THE INTERIOR MINERALS MANAGEMENT (3000) LANDS AND MINERALS SUBJECT TO LOCATION Mineral Locations in Reclamation Withdrawals § 3816.1 Mineral locations. The Act of April 23, 1932 (47 Stat. 136;...

  3. 43 CFR 3816.1 - Mineral locations.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 43 Public Lands: Interior 2 2013-10-01 2013-10-01 false Mineral locations. 3816.1 Section 3816.1..., DEPARTMENT OF THE INTERIOR MINERALS MANAGEMENT (3000) LANDS AND MINERALS SUBJECT TO LOCATION Mineral Locations in Reclamation Withdrawals § 3816.1 Mineral locations. The Act of April 23, 1932 (47 Stat. 136;...

  4. 43 CFR 3815.1 - Mineral locations.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 43 Public Lands: Interior 2 2013-10-01 2013-10-01 false Mineral locations. 3815.1 Section 3815.1..., DEPARTMENT OF THE INTERIOR MINERALS MANAGEMENT (3000) LANDS AND MINERALS SUBJECT TO LOCATION Mineral Locations in Stock Driveway Withdrawals § 3815.1 Mineral locations. Under authority of the provisions of...

  5. 43 CFR 3815.1 - Mineral locations.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 43 Public Lands: Interior 2 2012-10-01 2012-10-01 false Mineral locations. 3815.1 Section 3815.1..., DEPARTMENT OF THE INTERIOR MINERALS MANAGEMENT (3000) LANDS AND MINERALS SUBJECT TO LOCATION Mineral Locations in Stock Driveway Withdrawals § 3815.1 Mineral locations. Under authority of the provisions of...

  6. 43 CFR 3816.1 - Mineral locations.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 43 Public Lands: Interior 2 2014-10-01 2014-10-01 false Mineral locations. 3816.1 Section 3816.1..., DEPARTMENT OF THE INTERIOR MINERALS MANAGEMENT (3000) LANDS AND MINERALS SUBJECT TO LOCATION Mineral Locations in Reclamation Withdrawals § 3816.1 Mineral locations. The Act of April 23, 1932 (47 Stat. 136;...

  7. 43 CFR 3815.1 - Mineral locations.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 43 Public Lands: Interior 2 2014-10-01 2014-10-01 false Mineral locations. 3815.1 Section 3815.1..., DEPARTMENT OF THE INTERIOR MINERALS MANAGEMENT (3000) LANDS AND MINERALS SUBJECT TO LOCATION Mineral Locations in Stock Driveway Withdrawals § 3815.1 Mineral locations. Under authority of the provisions of...

  8. 43 CFR 3815.1 - Mineral locations.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 43 Public Lands: Interior 2 2011-10-01 2011-10-01 false Mineral locations. 3815.1 Section 3815.1..., DEPARTMENT OF THE INTERIOR MINERALS MANAGEMENT (3000) LANDS AND MINERALS SUBJECT TO LOCATION Mineral Locations in Stock Driveway Withdrawals § 3815.1 Mineral locations. Under authority of the provisions of...

  9. Privacy-Preserving Location-Based Services

    ERIC Educational Resources Information Center

    Chow, Chi Yin

    2010-01-01

    Location-based services (LBS for short) providers require users' current locations to answer their location-based queries, e.g., range and nearest-neighbor queries. Revealing personal location information to potentially untrusted service providers could create privacy risks for users. To this end, our objective is to design a privacy-preserving…

  10. Comparison of B{sub 2}O{sub 3} and BN deposited by atomic layer deposition for forming ultrashallow dopant regions by solid state diffusion

    SciTech Connect

    Consiglio, Steven Clark, Robert D.; O'Meara, David; Wajda, Cory S.; Tapily, Kandabara; Leusink, Gert J.

    2016-01-15

    In this study, the authors investigated atomic layer deposition (ALD) of B{sub 2}O{sub 3} and BN for conformal, ultrashallow B doping applications and compared the effect of dopant-containing overlayers on sheet resistance (R{sub s}) and B profiles for both types of films subjected to a drive-in thermal anneal. For the deposition of B{sub 2}O{sub 3}, tris(dimethylamido)borane and O{sub 3} were used as coreactants and for the deposition of BN, BCl{sub 3} and NH{sub 3} were used as coreactants. Due to the extreme air instability of B{sub 2}O{sub 3} films, physical analysis was performed on B{sub 2}O{sub 3} films, which were capped in-situ with ∼30 Å ALD grown Al{sub 2}O{sub 3} layers. For the BN films, in-situ ALD grown Si{sub 3}N{sub 4} capping layers (∼30 Å) were used for comparison. From spectroscopic ellipsometry, a thickness decrease was observed after 1000 °C, 30 s anneal for the B{sub 2}O{sub 3} containing stack with 60 ALD cycles of B{sub 2}O{sub 3}, whereas the BN containing stacks showed negligible thickness decrease after the annealing step, regardless of the number of BN cycles tested. The postanneal reduction in film thickness as well as decrease in R{sub s} for the B{sub 2}O{sub 3} containing stack suggests that the solid state diffusion dopant mechanism is effective, whereas for the BN containing stacks this phenomenon seems to be suppressed. Further clarification of the effectiveness of the B{sub 2}O{sub 3} containing layer compared to the film stacks with BN was evidenced in backside secondary ion mass spectrometry profiling of B atoms. Thus, B{sub 2}O{sub 3} formed by an ALD process and subsequently capped in-situ followed by a drive-in anneal offers promise as a dopant source for ultrashallow doping, whereas the same method using BN seems ineffective. An integrated approach for B{sub 2}O{sub 3} deposition and annealing on a clustered tool also demonstrated controllable R{sub s} reduction without the use of a capping layer.

  11. Statistical theory of passive location systems

    NASA Astrophysics Data System (ADS)

    Torrieri, D. J.

    1984-03-01

    A derivation of the principal algorithms and an analysis of the performance of the two most important passive location systems for stationary transmitters, hyperbolic location systems and direction-finding location systems, are presented. The concentration ellipse, the circular error probability, and the geometric dilution of precision are defined and related to the location-system and received-signal characteristics. Doppler and other passive location systems are briefly discussed.

  12. Central Chemoreceptors: Locations and Functions

    PubMed Central

    Nattie, Eugene; Li, Aihua

    2016-01-01

    Central chemoreception traditionally refers to a change in ventilation attributable to changes in CO2/H+ detected within the brain. Interest in central chemoreception has grown substantially since the previous Handbook of Physiology published in 1986. Initially, central chemoreception was localized to areas on the ventral medullary surface, a hypothesis complemented by the recent identification of neurons with specific phenotypes near one of these areas as putative chemoreceptor cells. However, there is substantial evidence that many sites participate in central chemoreception some located at a distance from the ventral medulla. Functionally, central chemoreception, via the sensing of brain interstitial fluid H+, serves to detect and integrate information on 1) alveolar ventilation (arterial PCO2), 2) brain blood flow and metabolism and 3) acid-base balance, and, in response, can affect breathing, airway resistance, blood pressure (sympathetic tone) and arousal. In addition, central chemoreception provides a tonic ‘drive’ (source of excitation) at the normal, baseline PCO2 level that maintains a degree of functional connectivity among brainstem respiratory neurons necessary to produce eupneic breathing. Central chemoreception responds to small variations in PCO2 to regulate normal gas exchange and to large changes in PCO2 to minimize acid-base changes. Central chemoreceptor sites vary in function with sex and with development. From an evolutionary perspective, central chemoreception grew out of the demands posed by air vs. water breathing, homeothermy, sleep, optimization of the work of breathing with the ‘ideal’ arterial PCO2, and the maintenance of the appropriate pH at 37°C for optimal protein structure and function. PMID:23728974

  13. Estimation of fine-root production using rates of diameter-dependent root mortality, decomposition and thickening in forests.

    PubMed

    Van Do, Tran; Osawa, Akira; Sato, Tamotsu

    2016-04-01

    Current studies indicate that fine roots of different diameter classes show different rates of decomposition. This study developed a new method to estimate fine-root production by considering the difference in the production of fine roots of two size classes, fine roots thinner than 1 mm and those between 1 and 2 mm, and their corresponding rates of decomposition. A litter bag experiment was used to estimate the decomposition rates, while the sequential soil core technique was used to identify mass values of live roots and dead roots at a given period of observation. The continuous inflow method was applied to estimate the amount of root decomposition, mortality and production with a framework of two diameter classes of fine roots and for quantification of the amount of mass transfer from the thicker fine-root class to the coarser root category (>2 mm). The results indicated that the estimate of fine-root production was greater when two size classes of fine roots were distinguished. Using a framework of two size classes developed in this study resulted in 21.3% higher fine-root production than a method that did not recognize fine-root size classes or mass transfer to the category of coarse roots. In addition, using shorter collection intervals led to higher production estimates than longer intervals. The production estimate with a 1-month interval was 21.4% higher than that with a 6-month interval. We consider that the use of the sequential soil core technique with continuous inflow estimate method by differentiating size classes of fine roots is likely to minimize the underestimation of the parameters of fine-root dynamics by accounting for decomposition and mortality of fine roots more appropriately.

  14. Diameter-dependent release of a cisplatin pro-drug from small and large functionalized carbon nanotubes.

    PubMed

    Muzi, Laura; Ménard-Moyon, Cécilia; Russier, Julie; Li, Jian; Chin, Chee Fei; Ang, Wee Han; Pastorin, Giorgia; Risuleo, Gianfranco; Bianco, Alberto

    2015-03-12

    The use of platinum-based chemotherapeutic drugs in cancer therapy still suffers from severe disadvantages, such as lack of appropriate selectivity for tumor tissues and insurgence of multi-drug resistance. Moreover, drug efficacy can be attenuated by several mechanisms such as premature drug inactivation, reduced drug uptake inside cells and increased drug efflux once internalized. The use of functionalized carbon nanotubes (CNTs) as chemotherapeutic drug delivery systems is a promising strategy to overcome such limitations due to their ability to enhance cellular internalization of poorly permeable drugs and thus increase the drug bioavailability at the diseased site, compared to the free drug. Furthermore, the possibility to encapsulate agents in the nanotubes' inner cavity can protect the drug from early inactivation and their external functionalizable surface is useful for selective targeting. In this study, a hydrophobic platinum(IV) complex was encapsulated within the inner space of two different diameter functionalized multi-walled CNTs (Pt(IV)@CNTs). The behavior of the complexes, compared to the free drug, was investigated on both HeLa human cancer cells and RAW 264.7 murine macrophages. Both CNT samples efficiently induced cell death in HeLa cancer cells 72 hours after the end of exposure to CNTs. Although the larger diameter CNTs were more cytotoxic on HeLa cells compared to both the free drug and the smaller diameter nanotubes, the latter allowed a prolonged release of the encapsulated drug, thus increasing its anticancer efficacy. In contrast, both Pt(IV)@CNT constructs were poorly cytotoxic on macrophages and induced negligible cell activation and no pro-inflammatory cytokine production. Both CNT samples were efficiently internalized by the two types of cells, as demonstrated by transmission electron microscopy observations and flow cytometry analysis. Finally, the platinum levels found in the cells after Pt(IV)@CNT exposure demonstrate that they can promote drug accumulation inside cells in comparison with treatment with the free complex. To conclude, our study shows that CNTs are promising nanocarriers to improve the accumulation of a chemotherapeutic drug and its slow release inside tumor cells, by tuning the CNT diameter, without inducing a high inflammatory response.

  15. Diameter dependence of the growth velocity of silicon nanowires synthesized via the vapor-liquid-solid mechanism

    NASA Astrophysics Data System (ADS)

    Schmidt, V.; Senz, S.; Gösele, U.

    2007-01-01

    We present a model for the radius dependence of the growth velocity of Si nanowires synthesized via the vapor-liquid-solid mechanism. By considering the interplay of the Si incorporation and crystallization rate at steady state conditions we show that the radius dependence of the growth velocity in general depends on the derivatives of the incorporation and crystallization velocity with respect to the supersaturation. Taking this into account, the apparently contradictory experimental observations regarding the radius dependence of the growth velocity can be reconciled and explained consistently.

  16. Diameter-dependent release of a cisplatin pro-drug from small and large functionalized carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Muzi, Laura; Ménard-Moyon, Cécilia; Russier, Julie; Li, Jian; Chin, Chee Fei; Ang, Wee Han; Pastorin, Giorgia; Risuleo, Gianfranco; Bianco, Alberto

    2015-03-01

    The use of platinum-based chemotherapeutic drugs in cancer therapy still suffers from severe disadvantages, such as lack of appropriate selectivity for tumor tissues and insurgence of multi-drug resistance. Moreover, drug efficacy can be attenuated by several mechanisms such as premature drug inactivation, reduced drug uptake inside cells and increased drug efflux once internalized. The use of functionalized carbon nanotubes (CNTs) as chemotherapeutic drug delivery systems is a promising strategy to overcome such limitations due to their ability to enhance cellular internalization of poorly permeable drugs and thus increase the drug bioavailability at the diseased site, compared to the free drug. Furthermore, the possibility to encapsulate agents in the nanotubes' inner cavity can protect the drug from early inactivation and their external functionalizable surface is useful for selective targeting. In this study, a hydrophobic platinum(iv) complex was encapsulated within the inner space of two different diameter functionalized multi-walled CNTs (Pt(iv)@CNTs). The behavior of the complexes, compared to the free drug, was investigated on both HeLa human cancer cells and RAW 264.7 murine macrophages. Both CNT samples efficiently induced cell death in HeLa cancer cells 72 hours after the end of exposure to CNTs. Although the larger diameter CNTs were more cytotoxic on HeLa cells compared to both the free drug and the smaller diameter nanotubes, the latter allowed a prolonged release of the encapsulated drug, thus increasing its anticancer efficacy. In contrast, both Pt(iv)@CNT constructs were poorly cytotoxic on macrophages and induced negligible cell activation and no pro-inflammatory cytokine production. Both CNT samples were efficiently internalized by the two types of cells, as demonstrated by transmission electron microscopy observations and flow cytometry analysis. Finally, the platinum levels found in the cells after Pt(iv)@CNT exposure demonstrate that they can promote drug accumulation inside cells in comparison with treatment with the free complex. To conclude, our study shows that CNTs are promising nanocarriers to improve the accumulation of a chemotherapeutic drug and its slow release inside tumor cells, by tuning the CNT diameter, without inducing a high inflammatory response.The use of platinum-based chemotherapeutic drugs in cancer therapy still suffers from severe disadvantages, such as lack of appropriate selectivity for tumor tissues and insurgence of multi-drug resistance. Moreover, drug efficacy can be attenuated by several mechanisms such as premature drug inactivation, reduced drug uptake inside cells and increased drug efflux once internalized. The use of functionalized carbon nanotubes (CNTs) as chemotherapeutic drug delivery systems is a promising strategy to overcome such limitations due to their ability to enhance cellular internalization of poorly permeable drugs and thus increase the drug bioavailability at the diseased site, compared to the free drug. Furthermore, the possibility to encapsulate agents in the nanotubes' inner cavity can protect the drug from early inactivation and their external functionalizable surface is useful for selective targeting. In this study, a hydrophobic platinum(iv) complex was encapsulated within the inner space of two different diameter functionalized multi-walled CNTs (Pt(iv)@CNTs). The behavior of the complexes, compared to the free drug, was investigated on both HeLa human cancer cells and RAW 264.7 murine macrophages. Both CNT samples efficiently induced cell death in HeLa cancer cells 72 hours after the end of exposure to CNTs. Although the larger diameter CNTs were more cytotoxic on HeLa cells compared to both the free drug and the smaller diameter nanotubes, the latter allowed a prolonged release of the encapsulated drug, thus increasing its anticancer efficacy. In contrast, both Pt(iv)@CNT constructs were poorly cytotoxic on macrophages and induced negligible cell activation and no pro-inflammatory cytokine production. Both CNT samples were efficiently internalized by the two types of cells, as demonstrated by transmission electron microscopy observations and flow cytometry analysis. Finally, the platinum levels found in the cells after Pt(iv)@CNT exposure demonstrate that they can promote drug accumulation inside cells in comparison with treatment with the free complex. To conclude, our study shows that CNTs are promising nanocarriers to improve the accumulation of a chemotherapeutic drug and its slow release inside tumor cells, by tuning the CNT diameter, without inducing a high inflammatory response. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr00220f

  17. Sensitivity of CoSi{sub 2} precipitation in silicon to extra-low dopant concentrations. II. First-principles calculations

    SciTech Connect

    Borodin, V. A.; Ganchenkova, M. G.; Ruault, M.-O.; Fortuna, F.

    2015-01-28

    The paper is the second part of the study on the influence of very low dopant content in silicon on CoSi{sub 2} precipitation during high-temperature cobalt ion implantation into transmission electron microscope samples. It deals with the computational justification of various assumptions used in Paper I when rationalizing the kinetics of cobalt clustering in ion-implanted intrinsic silicon (both undoped and containing low concentrations of phosphorus atoms). In particular, it is proven that divacancies are efficient nucleation centers for the new Co-Si phase. It is shown that the capture of vacancies and divacancies on phosphorus atoms increases their lifetime in silicon matrix, but practically does not affect the mechanism of their interaction with interstitial cobalt atoms. Finally, it is demonstrated that the mobility of phosphorus interstitials at temperatures of our experiment is orders of magnitude higher than might be expected from the published literature data.

  18. Strikingly dissimilar effect of Mn and Zn dopants imposed on local structural distortion of Ba0.5K0.5Fe2As2 superconductor.

    PubMed

    Cheng, Jie; Dong, Peng; Chu, Wangsheng; Xu, Wei; Wen, Haihu; Marcelli, Augusto; Wu, Ziyu

    2013-05-01

    To clarify the contrasting impurity effects of Mn and Zn dopants on the critical temperature of optimally doped Ba0.5K0.5Fe2As2 superconductors, extended X-ray absorption fine-structure spectroscopy was implemented at the Fe and As K-edge. In Mn-doped compounds a gradual deviation of the symmetric FeAs4 tetrahedron and weakening of the Fe-As bond was observed. Conversely, in Zn-doped compounds the perfect FeAs4 tetrahedron is maintained and the Fe-As bond is rigid. The local structural details are consistent with the development of superconductivity in these two systems, suggesting a significant role played by the topology of the FeAs4 tetrahedron and rigidness of the Fe-As bond in Mn/Zn-doped Ba0.5K0.5Fe2As2 superconductors.

  19. Effect of Mg2+ and Ti4+ dopants on the structural, magnetic and high-frequency ferromagnetic properties of barium hexaferrite

    NASA Astrophysics Data System (ADS)

    Shams, Mohammad H.; Rozatian, Amir S. H.; Yousefi, Mohammad H.; Valíček, Jan; Šepelák, Vladimir

    2016-02-01

    The doped barium hexaferrite, BaFe12-x(Mg0.5Ti0.5)xO19 with 1≤x≤5, is synthesized by a solid state ceramic method. Its crystalline structure, morphology, as well as static and dynamic magnetic properties are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), vibrating sample magnetometry, and vector network analysis, respectively. The cation distribution of Mg2+ and Ti4+ in the hexagonal structure of BaFe12-x(Mg0.5Ti0.5)xO19 is investigated by 57Fe Mössbauer spectroscopy. The effect of Mg2+ and Ti4+ dopants on static and high-frequency magnetic properties of the ferrite is studied.

  20. Analysis of anabolic steroids in urine by gas chromatography-microchip atmospheric pressure photoionization-mass spectrometry with chlorobenzene as dopant.

    PubMed

    Hintikka, Laura; Haapala, Markus; Kuuranne, Tiia; Leinonen, Antti; Kostiainen, Risto

    2013-10-18

    A gas chromatography-microchip atmospheric pressure photoionization-tandem mass spectrometry (GC-μAPPI-MS/MS) method was developed for the analysis of anabolic androgenic steroids in urine as their trimethylsilyl derivatives. The method utilizes a heated nebulizer microchip in atmospheric pressure photoionization mode (μAPPI) with chlorobenzene as dopant, which provides high ionization efficiency by producing abundant radical cations with minimal fragmentation. The performance of GC-μAPPI-MS/MS was evaluated with respect to repeatability, linearity, linear range, and limit of detection (LOD). The results confirmed the potential of the method for doping control analysis of anabolic steroids. Repeatability (RSD<10%), linearity (R(2)≥0.996) and sensitivity (LODs 0.05-0.1ng/mL) were acceptable. Quantitative performance of the method was tested and compared with that of conventional GC-electron ionization-MS, and the results were in good agreement.