Flexible, Low-Power Thin-Film Transistors Made of Vapor-Phase Synthesized High-k, Ultrathin Polymer Gate Dielectrics.

PubMed

Choi, Junhwan; Joo, Munkyu; Seong, Hyejeong; Pak, Kwanyong; Park, Hongkeun; Park, Chan Woo; Im, Sung Gap

2017-06-21

A series of high-k, ultrathin copolymer gate dielectrics were synthesized from 2-cyanoethyl acrylate (CEA) and di(ethylene glycol) divinyl ether (DEGDVE) monomers by a free radical polymerization via a one-step, vapor-phase, initiated chemical vapor deposition (iCVD) method. The chemical composition of the copolymers was systematically optimized by tuning the input ratio of the vaporized CEA and DEGDVE monomers to achieve a high dielectric constant (k) as well as excellent dielectric strength. Interestingly, DEGDVE was nonhomopolymerizable but it was able to form a copolymer with other kinds of monomers. Utilizing this interesting property of the DEGDVE cross-linker, the dielectric constant of the copolymer film could be maximized with minimum incorporation of the cross-linker moiety. To our knowledge, this is the first report on the synthesis of a cyanide-containing polymer in the vapor phase, where a high-purity polymer film with a maximized dielectric constant was achieved. The dielectric film with the optimized composition showed a dielectric constant greater than 6 and extremely low leakage current densities (<3 × 10 -8 A/cm 2 in the range of ±2 MV/cm), with a thickness of only 20 nm, which is an outstanding thickness for down-scalable cyanide polymer dielectrics. With this high-k dielectric layer, organic thin-film transistors (OTFTs) and oxide TFTs were fabricated, which showed hysteresis-free transfer characteristics with an operating voltage of less than 3 V. Furthermore, the flexible OTFTs retained their low gate leakage current and ideal TFT characteristics even under 2% applied tensile strain, which makes them some of the most flexible OTFTs reported to date. We believe that these ultrathin, high-k organic dielectric films with excellent mechanical flexibility will play a crucial role in future soft electronics.

Effects of oxygen deficiency on the transport and dielectric properties of NdSrNbO

NASA Astrophysics Data System (ADS)

Hzez, W.; Benali, A.; Rahmouni, H.; Dhahri, E.; Khirouni, K.; Costa, B. F. O.

2018-06-01

In the present study, Nd0.7Sr0.3NbO3-y (y = 0.1, 0.15, 0.2) compounds were prepared via a solid-solid reaction route. The prepared samples were characterized by electrochemical impedance spectroscopy in order to establish the effects of temperature, frequency, and oxygen vacancies on both the transport and dielectric properties of NdSrNbO. We found that both the electrical and dielectric properties were highly sensitive to the concentration of oxygen vacancies. The conduction mechanism data were explained well according to the Mott model and adiabatic small polaronic hopping model. Electrochemical impedance spectroscopy analysis showed that one relaxation process was present in the Nd0.7Sr0.3NbO2.9 system whereas two relaxation processes were observed in the Nd0.7Sr0.3NbO2.85 and Nd0.7Sr0.3NbO2.8 systems, where the latter behavior indicated the presence of many active regions (due to the contributions of different microstructures). The temperature and frequency dependences of the dielectric constant confirmed the contributions of different polarization mechanisms. In particular, the high dielectric constant values at low frequencies and high temperatures were mainly related to the presence of different Schottky barriers, whereas the low dielectric constant values at high frequencies were essentially related to the intrinsic effect. The constant dielectric values obtained for the samples are greater than those in the NdSrFeO system, which makes them interesting materials for use in applications that require high dielectric constants.

Polymer Nanocomposite Materials with High Dielectric Permittivity and Low Dielectric Loss Properties

NASA Astrophysics Data System (ADS)

Toor, Anju

Materials with high dielectric permittivity have drawn increasing interests in recent years for their important applications in capacitors, actuators, and high energy density pulsed power. Particularly, polymer-based dielectrics are excellent candidates, owing to their properties such as high breakdown strength, low dielectric loss, flexibility and easy processing. To enhance the dielectric permittivity of polymer materials, typically, high dielectric constant filler materials are added to the polymer. Previously, ferroelectric and conductive fillers have been mainly used. However, such systems suffered from various limitations. For example, composites based on ferroelectric materials like barium titanate, exhibited high dielectric loss, and poor saturation voltages. Conductive fillers are used in the form of powder aggregates, and they may show 10-100 times enhancement in dielectric constant, however these nanoparticle aggregates cause the dielectric loss to be significant. Also, agglomerates limit the volume fraction of fillers in polymer and hence, the ability to achieve superior dielectric constants. Thus, the aggregation of nanoparticles is a significant challenge to their use to improve the dielectric permittivity. We propose the use of ligand-coated metal nanoparticle fillers to enhance the dielectric properties of the host polymer while minimizing dielectric loss by preventing nanoparticle agglomeration. The focus is on obtaining uniform dispersion of nanoparticles with no agglomeration by utilizing appropriate ligands/surface functionalizations on the gold nanoparticle surface. Use of ligand coated metal nanoparticles will enhance the dielectric constant while minimizing dielectric loss, even with the particles closely packed in the polymer matrix. Novel combinations of materials, which use 5 nm diameter metal nanoparticles embedded inside high breakdown strength polymer materials are evaluated. High breakdown strength polymer materials are chosen to allow further exploration of these materials for energy storage applications. In summary, two novel nanocomposite materials are designed and synthesized, one involving polyvinylidene fluoride (PVDF) as the host polymer for potential applications in energy storage and the other with SU-8 for microelectronic applications. Scanning elec- tron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy and ultramicrotoming techniques were used for the material characterization of the nanocomposite materials. A homogeneous dispersion of gold nanoparticles with low particle agglomeration has been achieved. Fabricated nanoparticle polymer composite films showed the absence of voids and cracks. Also, no evidence of macro-phase separation of nanoparticles from the polymer phase was observed. This is important because nanoparticle agglomeration and phase separation from the polymer usually results in poor processability of films and a high defect density. Dielectric characterization of the nanocomposite materials showed enhancement in the dielectric constant over the base polymer values and low dielectric loss values were observed.

Off Axis Growth of Strontium Titanate Films with High Dielectric Constant Tuning and Low Loss

NASA Astrophysics Data System (ADS)

Kampangkeaw, Satreerat

2002-03-01

Using off-axis pulsed laser deposition, we have grown strontium titanate (STO) films on neodymium gallate (NGO) and lanthanum aluminate (LAO) substrates. We measured the film dielectric constant and loss tangent as a function of temperature in the 10kHz to 1 MHz frequency range. We found that the loss is less than 0.01 We also obtained a figure of merit from the relative variation of the dielectric constant divided by the loss tangent. The obtained figured of merit at 35K and 1MHz is about 1000 comparable to bulk values. The dielectric constant of these films can be changed by a factor of 4-8 in the presence of a DC electric field up to 5V/μm. The films show significant variations of dielectric properties grown on different substrates at different locations respect to the axis of the plume. The STO films on LAO having high dielectric constant and dielectric tuning were grown in region near the center of the plume. On the other hand, STO on NGO shows this effect only on the films grown far from the plume axis.

Increase of dielectric constant in PVDF by incorporating La{sub 1.8}Sr{sub 0.2}NiO{sub 4} into its matrix

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Rajnish, E-mail: rajnish@iitp.ac.in; Goswami, Ashwin M., E-mail: ashwin.nanoplast@gmail.com; Kar, Manoranjan, E-mail: mano-iitg@yahoo.com

2016-05-06

To obtain the material with high dielectric constant and high dielectric strength for the technological applications, nanocomposite of Lanthanum Strontium Nickelete (La{sub 1.8}Sr{sub 0.2}NiO{sub 4}) as nanofiller and polyvinylidene fluoride (PVDF) as polymer matrix has been prepared. The different nanofiler weight concentration varies from 2-8 weight percent. X-ray diffraction technique confirms the phase formation of nanocomposite. Differential scanning calorimeter (DSC) has been employed to study the percentage of crystallinity and Impedance measurement has been carried out to study the dielectric constant. DSC analysis shows decreasing trend of crystallinity whereas impedance analysis gives increasing dielectric constant with increasing La{sub 1.8}Sr{sub 0.2}NiO{submore » 4} concentration in the nanocomposite. Also, these materials can be used as insulator in the transformer as the strength and dielectric behavior of present composite meets the technological requirements.« less

Colossal dielectric constant up to gigahertz at room temperature

NASA Astrophysics Data System (ADS)

Krohns, S.; Lunkenheimer, P.; Kant, Ch.; Pronin, A. V.; Brom, H. B.; Nugroho, A. A.; Diantoro, M.; Loidl, A.

2009-03-01

The applicability of recently discovered materials with extremely high ("colossal") dielectric constants, required for future electronics, suffers from the fact that their dielectric constant ɛ' only is huge in a limited frequency range below about 1 MHz. In the present report, we show that the dielectric properties of a charge-ordered nickelate, La15/8Sr1/8NiO4, surpass those of other materials. Especially, ɛ' retains its colossal magnitude of >10 000 well into the gigahertz range.

THE STUDY OF HIGH DIELECTRIC CONSTANT MECHANISM OF La-DOPED Ba0.67Sr0.33TiO3 CERAMICS

NASA Astrophysics Data System (ADS)

Xu, Jing; He, Bo; Liu, Han Xing

It is a common and effective method to enhance the dielectric properties of BST ceramics by adding rare-earth elements. In this paper, it is important to analyze the cause of the high dielectric constant behavior of La-doped BST ceramics. The results show that proper rare earth La dopant (0.2≤x≤0.7) may greatly increase the dielectric constant of BST ceramics, and also improve the temperature stability, evidently. According to the current-voltage (J-V) characteristics, the proper La-doped BST ceramics may reach the better semiconductivity, with the decrease and increase in La doping, the ceramics are insulators. By using the Schottky barrier model and electric microstructure model to find the surface or grain boundary potential barrier height, the width of the depletion layer and grain size do play an important role in impacting the dielectric constant.

Investigation of dielectric properties of different cake formulations during microwave and infrared-microwave combination baking.

PubMed

Sakiyan, Ozge; Sumnu, Gulum; Sahin, Serpil; Meda, Venkatesh

2007-05-01

Dielectric properties can be used to understand the behavior of food materials during microwave processing. Dielectric properties influence the level of interaction between food and high frequency electromagnetic energy. Dielectric properties are, therefore, important in the design of foods intended for microwave preparation. In this study, it was aimed to determine the variation of dielectric properties of different cake formulations during baking in microwave and infrared-microwave combination oven. In addition, the effects of formulation and temperature on dielectric properties of cake batter were examined. Dielectric constant and loss factor of cake samples were shown to be dependent on formulation, baking time, and temperature. The increase in baking time and temperature decreased dielectric constant and loss factor of all formulations. Fat content was shown to increase dielectric constant and loss factor of cakes.

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanne, A.; Movva, H. C. P.; Kang, S.

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriersmore » as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.« less

Colossal dielectric and electromechanical responses in self-assembled polymeric nanocomposites

NASA Astrophysics Data System (ADS)

Huang, Cheng; Zhang, Q. M.; Li, Jiang Yu; Rabeony, Manese

2005-10-01

An electroactive polymer nanocomposite, in which high dielectric constant copper phthalocyanine oligomer (o-CuPc) nanoparticles are incorporated into the block polyurethane (PU) matrix by the combination of "top down" and "bottom up" approaches, was realized. Such an approach enables the nanocomposite to exhibit colossal dielectric and electromechanical responses with very low volume fraction of the high dielectric constant o-CuPc nanofillers (˜3.5%) in the composite. In contrast, a simple blend of o-CuPc and PU composite with much higher o-CuPc content (˜16% of o-CuPc) shows much lower dielectric and electromechanical responses.

Colossal dielectric constant in PrFeO 3 semiconductor ceramics

NASA Astrophysics Data System (ADS)

Prasad, Bandi Vittal; Rao, G. Narsinga; Chen, J. W.; Babu, D. Suresh

2012-02-01

The perovskite PrFeO 3 ceramics were synthesized via sol-gel method. The dielectric properties and impedance spectroscopy (IS) of these ceramics were studied in the frequency range from 100 Hz to 1000 kHz in the temperature range from 80 K to 300 K. These materials exhibited colossal dielectric constant value of ˜10 4 at room temperature. The response is similar to that observed for relaxorferroelectrics. IS data analysis indicates the ceramics to be electrically heterogeneous semiconductor consisting of semiconducting grains with dielectric constant 30 and more resistive grain boundaries with effective dielectric constant ˜10 4. We conclude, therefore that grain boundary effect is the primary source for the high effective permittivity in PrFeO 3 ceramics.

Core-shell structured polystyrene/BaTiO3 hybrid nanodielectrics prepared by in situ RAFT polymerization: a route to high dielectric constant and low loss materials with weak frequency dependence.

PubMed

Yang, Ke; Huang, Xingyi; Xie, Liyuan; Wu, Chao; Jiang, Pingkai; Tanaka, Toshikatsu

2012-11-23

A novel route to prepare core-shell structured nanocomposites with excellent dielectric performance is reported. This approach involves the grafting of polystyrene (PS) from the surface of BaTiO(3) by an in situ RAFT polymerization. The core-shell structured PS/BaTiO(3) nanocomposites not only show significantly increased dielectric constant and very low dielectric loss, but also have a weak frequency dependence of dielectric properties over a wide range of frequencies. In addition, the dielectric constant of the nanocomposites can also be easily tuned by varying the thickness of the PS shell. Our method is very promising for preparing high-performance nanocomposites used in energy-storage devices. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dielectric properties of carbon nanotubes/epoxy composites.

PubMed

Peng, Jin-Ping; Zhang, Hui; Tang, Long-Cheng; Jia, Yu; Zhang, Zhong

2013-02-01

Material with high dielectric properties possesses the effect of energy storage and electric field homogenization, which plays an important role in the electrical and electronics domain, especially in the capacitor, electrical machinery and cable realm. In this paper, epoxy-based nanocomposites with high dielectric constant were fabricated by adding pristine and ozone functionalized multi-wall carbon nanotubes (MWCNTs). In the process-related aspect, the favorable technological parameter was obtained via reasonable arrangement and consideration of the dispersing methods including high-speed stirring and three-roller mill. As a result, a uniform dispersion status of MWCNTs in matrix has been guaranteed, which was observed by scanning and transmission electron microscopy. Meanwhile, the influence of different MWCNTs contents and diverse frequencies on the dielectric properties was compared. It was found that the dielectric constant of nano-composites decreased gradually with the increasing of frequency (10(3)-10(6) Hz). Moreover, as the content of MWCNTs increasing, the dielectric constant reached to a maximum of about 1,328 at 10(3) Hz when the pristine MWCNTs content was 0.5 wt.%. Accordingly, the DC conductivity results could interpret the peak value phenomenon by percolation threshold of MWCNTs. In addition, at the fixed content, the dielectric constant of epoxy-based nano-composites with ozone functionalized MWCNTs was lower than that of pristine ones.

Application of dielectric constant measurement in microwave sludge disintegration and wastewater purification processes.

PubMed

Kovács, Petra Veszelovszki; Lemmer, Balázs; Keszthelyi-Szabó, Gábor; Hodúr, Cecilia; Beszédes, Sándor

2018-05-01

It has been numerously verified that microwave radiation could be advantageous as a pre-treatment for enhanced disintegration of sludge. Very few data related to the dielectric parameters of wastewater of different origins are available; therefore, the objective of our work was to measure the dielectric constant of municipal and meat industrial wastewater during a continuous flow operating microwave process. Determination of the dielectric constant and its change during wastewater and sludge processing make it possible to decide on the applicability of dielectric measurements for detecting the organic matter removal efficiency of wastewater purification process or disintegration degree of sludge. With the measurement of dielectric constant as a function of temperature, total solids (TS) content and microwave specific process parameters regression models were developed. Our results verified that in the case of municipal wastewater sludge, the TS content has a significant effect on the dielectric constant and disintegration degree (DD), as does the temperature. The dielectric constant has a decreasing tendency with increasing temperature for wastewater sludge of low TS content, but an adverse effect was found for samples with high TS and organic matter contents. DD of meat processing wastewater sludge was influenced significantly by the volumetric flow rate and power level, as process parameters of continuously flow microwave pre-treatments. It can be concluded that the disintegration process of food industry sludge can be detected by dielectric constant measurements. From technical purposes the applicability of dielectric measurements was tested in the purification process of municipal wastewater, as well. Determination of dielectric behaviour was a sensitive method to detect the purification degree of municipal wastewater.

Giant dielectric constant in titania nanoparticles embedded in conducting polymer matrix.

PubMed

Dey, Ashis; De, Sukanta; De, Amitabha; De, S K

2006-05-01

Complex impedance and dielectric permittivity of titania-polypyrrole nanocomposites have been investigated as a function of frequency and temperature at different compositions. A very large dielectric constant of about 13,000 at room temperature has been observed. The colossal dielectric constant is mainly dominated by interfacial polarization due to Maxwell-Wagner relaxation effect. Two completely separate groups of dielectric relaxation have been observed. The low frequency dielectric relaxation arises from surface defect states of titania nanoparticles. The broad peak at high frequency region is attributed to Maxwell-Wagner type polarization originating from the inhomogeneous property of nanocomposite. An abrupt change in grain boundary conductivity and dielectric relaxation associated with titania was observed at around 150 K. Anomalous behavior in conductivity and dielectric relaxation is qualitatively explained by band tail structure of titania nanoparticle.

Nanocomposites of polyimide and mixed oxide nanoparticles for high performance nanohybrid gate dielectrics in flexible thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Ju Hyun; Hwang, Byeong-Ung; Kim, Do-Il; Kim, Jin Soo; Seol, Young Gug; Kim, Tae Woong; Lee, Nae-Eung

2017-05-01

Organic gate dielectrics in thin film transistors (TFTs) for flexible display have advantages of high flexibility yet have the disadvantage of low dielectric constant (low- k). To supplement low- k characteristics of organic gate dielectrics, an organic/inorganic nanocomposite insulator loaded with high- k inorganic oxide nanoparticles (NPs) has been investigated but high loading of high- k NPs in polymer matrix is essential. Herein, compositing of over-coated polyimide (PI) on self-assembled (SA) layer of mixed HfO2 and ZrO2 NPs as inorganic fillers was used to make dielectric constant higher and leakage characteristics lower. A flexible TFT with lower the threshold voltage and high current on/off ratio could be fabricated by using the hybrid gate dielectric structure of the nanocomposite with SA layer of mixed NPs on ultrathin atomic-layer deposited Al2O3. [Figure not available: see fulltext.

Fluoro-polymer functionalized graphene for flexible ferroelectric polymer-based high-k nanocomposites with suppressed dielectric loss and low percolation threshold.

PubMed

Yang, Ke; Huang, Xingyi; Fang, Lijun; He, Jinliang; Jiang, Pingkai

2014-12-21

Flexible nanodielectric materials with high dielectric constant and low dielectric loss have huge potential applications in the modern electronic and electric industry. Graphene sheets (GS) and reduced-graphene oxide (RGO) are promising fillers for preparing flexible polymer-based nanodielectric materials because of their unique two-dimensional structure and excellent electrical and mechanical properties. However, the easy aggregation of GS/RGO significantly limits the potential of graphene in enhancing the dielectric constant of polymer composites. In addition, the poor filler/matrix nanoscale interfacial adhesion also causes difficulties in suppressing the dielectric loss of the composites. In this work, using a facile and environmentally friendly approach, polydopamine coated RGO (PDA-RGO) and fluoro-polymer functionalized RGO (PF-PDA-RGO) were prepared. Compared with the RGO prepared by the conventional methods [i.e. hydrazine reduced-graphene oxide (H-RGO)] and PDA-RGO, the resulting PF-PDA-RGO nanosheets exhibit excellent dispersion in the ferroelectric polymer matrix [i.e. poly(vinylidene fluoride-co-hexafluoro propylene), P(VDF-HFP)] and strong interfacial adhesion with the matrix, leading to a low percolation threshold (fc = 1.06 vol%) and excellent flexibility for the corresponding nanocomposites. Among the three nanocomposites, the P(VDF-HFP)/PF-PDA-RGO nanocomposites exhibited the optimum performance (i.e. simultaneously having high dielectric constant and low dielectric loss). For instance, at 1000 Hz, the P(VDF-HFP) nanocomposite sample with 1.0 vol% PF-PDA-RGO has a dielectric constant of 107.9 and a dielectric loss of 0.070, showing good potential for dielectric applications. Our strategy provides a new pathway to prepare high performance flexible nanodielectric materials.

High-gradient compact linear accelerator

DOEpatents

Carder, B.M.

1998-05-26

A high-gradient linear accelerator comprises a solid-state stack in a vacuum of five sets of disc-shaped Blumlein modules each having a center hole through which particles are sequentially accelerated. Each Blumlein module is a sandwich of two outer conductive plates that bracket an inner conductive plate positioned between two dielectric plates with different thicknesses and dielectric constants. A third dielectric core in the shape of a hollow cylinder forms a casing down the series of center holes, and it has a dielectric constant different that the two dielectric plates that sandwich the inner conductive plate. In operation, all the inner conductive plates are charged to the same DC potential relative to the outer conductive plates. Next, all the inner conductive plates are simultaneously shorted to the outer conductive plates at the outer diameters. The signal short will propagate to the inner diameters at two different rates in each Blumlein module. A faster wave propagates quicker to the third dielectric core across the dielectric plates with the closer spacing and lower dielectric constant. When the faster wave reaches the inner extents of the outer and inner conductive plates, it reflects back outward and reverses the field in that segment of the dielectric core. All the field segments in the dielectric core are then in unipolar agreement until the slower wave finally propagates to the third dielectric core across the dielectric plates with the wider spacing and higher dielectric constant. During such unipolar agreement, particles in the core are accelerated with gradients that exceed twenty megavolts per meter. 10 figs.

High-gradient compact linear accelerator

DOEpatents

Carder, Bruce M.

1998-01-01

A high-gradient linear accelerator comprises a solid-state stack in a vacuum of five sets of disc-shaped Blumlein modules each having a center hole through which particles are sequentially accelerated. Each Blumlein module is a sandwich of two outer conductive plates that bracket an inner conductive plate positioned between two dielectric plates with different thicknesses and dielectric constants. A third dielectric core in the shape of a hollow cylinder forms a casing down the series of center holes, and it has a dielectric constant different that the two dielectric plates that sandwich the inner conductive plate. In operation, all the inner conductive plates are charged to the same DC potential relative to the outer conductive plates. Next, all the inner conductive plates are simultaneously shorted to the outer conductive plates at the outer diameters. The signal short will propagate to the inner diameters at two different rates in each Blumlein module. A faster wave propagates quicker to the third dielectric core across the dielectric plates with the closer spacing and lower dielectric constant. When the faster wave reaches the inner extents of the outer and inner conductive plates, it reflects back outward and reverses the field in that segment of the dielectric core. All the field segments in the dielectric core are then in unipolar agreement until the slower wave finally propagates to the third dielectric core across the dielectric plates with the wider spacing and higher dielectric constant. During such unipolar agreement, particles in the core are accelerated with gradients that exceed twenty megavolts per meter.

Rationally designed polyimides for high-energy density capacitor applications.

PubMed

Ma, Rui; Baldwin, Aaron F; Wang, Chenchen; Offenbach, Ido; Cakmak, Mukerrem; Ramprasad, Rampi; Sotzing, Gregory A

2014-07-09

Development of new dielectric materials is of great importance for a wide range of applications for modern electronics and electrical power systems. The state-of-the-art polymer dielectric is a biaxially oriented polypropylene (BOPP) film having a maximal energy density of 5 J/cm(3) and a high breakdown field of 700 MV/m, but with a limited dielectric constant (∼2.2) and a reduced breakdown strength above 85 °C. Great effort has been put into exploring other materials to fulfill the demand of continuous miniaturization and improved functionality. In this work, a series of polyimides were investigated as potential polymer materials for this application. Polyimide with high dielectric constants of up to 7.8 that exhibits low dissipation factors (<1%) and high energy density around 15 J/cm(3), which is 3 times that of BOPP, was prepared. Our syntheses were guided by high-throughput density functional theory calculations for rational design in terms of a high dielectric constant and band gap. Correlations of experimental and theoretical results through judicious variations of polyimide structures allowed for a clear demonstration of the relationship between chemical functionalities and dielectric properties.

High-dielectric-constant polymers as high-energy-density (HED) field effect actuator and capacitor materials

NASA Astrophysics Data System (ADS)

Huang, Cheng; Zhang, Qiming

2004-07-01

The development of high dielectric constant polymers as active materials in high-performance devices is one of the challenges in polymeric electronics and opto-electronics such as flexible thin-film capacitors, memory devices and microactuators for deformable micromirror technology. A group of poly(vinylidene fluoridetrifluoroethylene) P(VDF-TrFE) based high-dielectric-constant fluoroterpolymers have been developed, which have high room-temperature dielectric constant (K>60) and very high strain level and high energy density. The longitudinal and transverse strain of these materials can reach about -7% and 4.5%, respectively, and the elastic energy density is around 1.1 J/cm^3 under a high electric field of 150 MV/m. The influence on the electromechanical properties of copolymerizing poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) with a third monomer, chlorofluoroethylene (CFE), was investigated. It was found that increasing the CFE content from 0 to 8.5% slowly converts the ferroelectric structure of the copolymer to a relaxor ferroelectric system. This allows for a greatly decreased polarization and dielectric hysteresis and a much higher strain. Above 8.5%, increased CFE content substantially degrades the bulk crystallinity and the Young's modulus. These terpolymers have the potential to achieve above 10 J/cm^3 whole capacity energy density, which makes them good candidates for applications in pulse power capacitors. An all-polymer percolative composite by the combination of conductive polyaniline particles (K>10^5) within a fluoroterpolymer matrix, is introduced which exhibits very high dielectric constant (>7,000). The experimental results show that the dielectric behavior of this new class of percolative composites follows the prediction of the percolation theory and the analysis of the conductive percolation phenomena. The very high dielectric constant of the all-polymer composites which are also very flexible and possess elastic modulus not very much different from that of the insulation polymer matrix makes it possible to induce a high electromechanical response under a much reduced electric field (a strain of 2.65% with an elastic energy density of 0.18 J/cm^3 can be achieved under a low field of 16 MV/m). Data analysis also suggests that in these composites, the non-uniform local field distribution as well as interface effects can significantly enhance the strain responses. Furthermore, the experimental data as well as the data analysis indicate that the conduction loss in these composites will not affect the strain hysteresis. Flexible high dielectric constant electroactive polymers provide potential applications in high-energy-density (HED) energy storage and conversion systems such as lightweight field effect actuators and capacitors.

Imaging performance of an isotropic negative dielectric constant slab.

PubMed

Shivanand; Liu, Huikan; Webb, Kevin J

2008-11-01

The influence of material and thickness on the subwavelength imaging performance of a negative dielectric constant slab is studied. Resonance in the plane-wave transfer function produces a high spatial frequency ripple that could be useful in fabricating periodic structures. A cost function based on the plane-wave transfer function provides a useful metric to evaluate the planar slab lens performance, and using this, the optimal slab dielectric constant can be determined.

An anion substitution route to low loss colossal dielectric CaCu{sub 3}Ti{sub 4}O{sub 12}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, Andrew E.; Calvarese, T.G.; Sleight, A.W.

2009-02-15

An anion substitution route was utilized for lowering the dielectric loss in CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) by partial replacement of oxygen by fluorine. This substitution reduced the dielectric loss, and retained a high dielectric constant that was essentially temperature independent from 25 to 200 deg. C. In particular, CaCu{sub 3}Ti{sub 4}O{sub 11.7}F{sub 0.3} exhibited a giant dielectric constant over 6000 and low dielectric loss below 0.075 at 100 kHz within a temperature range of 25-200 deg. C. Fluorine analysis confirmed the presence of fluorine in all samples measured. - Grapical Abstract: An anion substitution route was utilized for loweringmore » the dielectric loss in CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) by partial replacement of oxygen by fluorine. This substitution, confirmed by fluorine analysis, reduced tan {delta}, and retained a high dielectric constant that was essentially temperature independent from 25 to 200 deg. C at 100 kHz.« less

High-k 3D-barium titanate foam/phenolphthalein poly(ether sulfone)/cyanate ester composites with frequency-stable dielectric properties and extremely low dielectric loss under reduced concentration of ceramics

NASA Astrophysics Data System (ADS)

Zheng, Longhui; Yuan, Li; Guan, Qingbao; Liang, Guozheng; Gu, Aijuan

2018-01-01

Higher dielectric constant, lower dielectric loss and better frequency stability have been the developing trends for high dielectric constant (high-k) materials. Herein, new composites have been developed through building unique structure by using hyperbranched polysiloxane modified 3D-barium titanate foam (BTF) (BTF@HSi) as the functional fillers and phenolphthalein poly(ether sulfone) (cPES)/cyanate ester (CE) blend as the resin matrix. For BTF@HSi/cPES/CE composite with 34.1 vol% BTF, its dielectric constant at 100 Hz is as high as 162 and dielectric loss is only 0.007; moreover, the dielectric properties of BTF@HSi/cPES/CE composites exhibit excellent frequency stability. To reveal the mechanism behind these attractive performances of BTF@HSi/cPES/CE composites, three kinds of composites (BTF/CE, BTF/cPES/CE, BTF@HSi/CE) were prepared, their structure and integrated performances were intensively investigated and compared with those of BTF@HSi/cPES/CE composites. Results show that the surface modification of BTF is good for preparing composites with improved thermal stability; while introducing flexible cPES to CE is beneficial to fabricate composites with good quality through effectively blocking cracks caused by the stress concentration, and then endowing the composites with good dielectric properties at reduced concentration of ceramics.

Predictive methods of some optoelectronic properties for blends based on quaternized polysulfones

NASA Astrophysics Data System (ADS)

Dobos, Adina Maria; Filimon, Anca

2017-11-01

Blends based on quaternized polysulfones were investigated in terms of optical and electronic properties. By applying the Bicerano formalism the refractive index and dielectric constant were evaluated. Also, the dielectric constant of these blends was studied as a function of temperature and frequency. As the result of the main chain structure and charged groups, an increase in theoretical values of the refractive index and dielectric constant with increasing of the ionic quaternized units content in the polymer blend occurs. Additionally, decrease in the dielectric constant with the increase of frequency and decrease of temperature was observed. Refractive index and dielectric constant values indicate that the analyzed samples are transparent and can be used in obtaining of materials with applications involving a small polarizability. Thus, the results are important in prediction of the special optoelectronic features of new polymers blends to obtain high-performance materials with applications in electronic and biomedical fields.

Stiff, strong, yet tough free-standing dielectric films of graphene nanosheets-polyurethane nanocomposites with very high dielectric constant and loss

NASA Astrophysics Data System (ADS)

Jan, Rahim; Habib, Amir; Gul, Iftikhar Hussain

2016-01-01

In this study, graphene nanosheets (GNS) prepared through a liquid exfoliation technique are dispersed in thermoplastic polyurethane (TPU) at a volume fraction (Vf) of up to 0.19. Then, the electrical and mechanical properties of the obtained composites are characterized. The dielectric spectroscopy shows an excessive variation in dielectric constant (1.1 to 3.53 × 107) and dielectric tangent loss (0.03 to 2515) with varying Vf over the frequency range of 25 kHz to 5 MHz. A considerable enhancement in electrical conductivity (DC) is found, from 3.87 × 10-10 S/m (base polymer) to 53.5 S/m for the 0.19 Vf GNS-TPU nanocomposite. The GNS-TPU composites are mechanically robust, with a considerable increase in stiffness (˜4-fold) and strength (almost twice), maintaining its ductility up to 0.09 Vf GNS. The high dielectric constant at lower frequencies is attributed to the well-established Maxwell-Wagner polarization effect, whereas the high dielectric tangent loss is due to leakage currents as a physical conducting network is formed at high filler loadings. The layered structure, high aspect ratio, and improved dispersion of GNS are the main reasons for the improvement in both the dielectric characteristics and the mechanical properties of the host polymer. [Figure not available: see fulltext.

High-speed droplet actuation on single-plate electrode arrays.

PubMed

Banerjee, Arghya Narayan; Qian, Shizhi; Joo, Sang Woo

2011-10-15

This paper reports a droplet-based microfluidic device composed of patterned co-planar electrodes in an all-in-a-single-plate arrangement and coated with dielectric layers for electrowetting-on-dielectric (EWOD) actuation of discrete droplets. The co-planar arrangement is preferred over conventional two-plate electrowetting devices because it provides simpler manufacturing process, reduced viscous drag, and easier liquid-handling procedures. These advantages lead to more versatile and efficient microfluidic devices capable of generating higher droplet speed and can incorporate various other droplet manipulation functions into the system for biological, sensing, and other microfluidic applications. We have designed, fabricated, and tested the devices using an insulating layer with materials having relatively high dielectric constant (SiO(2)) and compared the results with polymer coatings (Cytop) with low dielectric constant. Results show that the device with high dielectric layer generates more reproducible droplet transfer over a longer distance with a 25% reduction in the actuation voltage with respect to the polymer coatings, leading to more energy efficient microfluidic applications. We can generate droplet speeds as high as 26 cm/s using materials with high dielectric constant such as SiO(2). Copyright © 2011. Published by Elsevier Inc.

Theoretical and Numerical Approaches for Determining the Reflection and Transmission Coefficients of OPEFB-PCL Composites at X-Band Frequencies

PubMed Central

Ahmad, Ahmad F.; Abbas, Zulkifly; Obaiys, Suzan J.; Ibrahim, Norazowa; Hashim, Mansor; Khaleel, Haider

2015-01-01

Bio-composites of oil palm empty fruit bunch (OPEFB) fibres and polycaprolactones (PCL) with a thickness of 1 mm were prepared and characterized. The composites produced from these materials are low in density, inexpensive, environmentally friendly, and possess good dielectric characteristics. The magnitudes of the reflection and transmission coefficients of OPEFB fibre-reinforced PCL composites with different percentages of filler were measured using a rectangular waveguide in conjunction with a microwave vector network analyzer (VNA) in the X-band frequency range. In contrast to the effective medium theory, which states that polymer-based composites with a high dielectric constant can be obtained by doping a filler with a high dielectric constant into a host material with a low dielectric constant, this paper demonstrates that the use of a low filler percentage (12.2%OPEFB) and a high matrix percentage (87.8%PCL) provides excellent results for the dielectric constant and loss factor, whereas 63.8% filler material with 36.2% host material results in lower values for both the dielectric constant and loss factor. The open-ended probe technique (OEC), connected with the Agilent vector network analyzer (VNA), is used to determine the dielectric properties of the materials under investigation. The comparative approach indicates that the mean relative error of FEM is smaller than that of NRW in terms of the corresponding S21 magnitude. The present calculation of the matrix/filler percentages endorses the exact amounts of substrate utilized in various physics applications. PMID:26474301

Dielectric characteristics of Mn-doped LaTiO3+δ ceramics

NASA Astrophysics Data System (ADS)

Chen, Yan; Cui, Yimin

A series of ceramic composites of Mn-doped La1- x MnxTiO3+ δ and LaMnxTi1- x O3+ δ (x = 0.1, 0.2) were synthesized by conventional solid-state reaction method. The low-frequency complex dielectric properties of the composites were investigated as functions of temperature (77 K <= T <= 360 K) and frequency (100 Hz <= f <= 1 MHz), respectively. The dielectric constant of A-site doped samples is higher than that of B-site doped samples. The loss tangent of low doped samples is much less than that of high doped samples. The A-site doped composites exhibit intrinsic dielectric response with a dielectric constant of 40 in the temperature below 250 K. Interestingly, the dielectric constants of B-site doped ceramics increase slightly in the temperature range from 77 to 360 K. And it is clearly observed that extraordinarily high dielectric loss tangent ( 6) appear at low frequency (100 Hz) in LaMn0.2Ti0.8O3+ δ , which is 8 times larger than that of LaMn0.1Ti0.9O3+ δ , which indicates that the doped content can affect the intrinsic dielectric characteristics significantly.

Analysis of capacitive force acting on a cantilever tip at solid/liquid interfaces

NASA Astrophysics Data System (ADS)

Umeda, Ken-ichi; Kobayashi, Kei; Oyabu, Noriaki; Hirata, Yoshiki; Matsushige, Kazumi; Yamada, Hirofumi

2013-04-01

Dielectric properties of biomolecules or biomembranes are directly related to their structures and biological activities. Capacitance force microscopy based on the cantilever deflection detection is a useful scanning probe technique that can map local dielectric constant. Here we report measurements and analysis of the capacitive force acting on a cantilever tip at solid/liquid interfaces induced by application of an alternating voltage to explore the feasibility of the measurements of local dielectric constant by the voltage modulation technique in aqueous solutions. The results presented here suggest that the local dielectric constant measurements by the conventional voltage modulation technique are basically possible even in polar liquid media. However, the cantilever deflection is not only induced by the electrostatic force, but also by the surface stress, which does not include the local dielectric information. Moreover, since the voltage applied between the tip and sample are divided by the electric double layer and the bulk polar liquid, the capacitive force acting on the apex of the tip are strongly attenuated. For these reasons, the lateral resolution in the local dielectric constant measurements is expected to be deteriorated in polar liquid media depending on the magnitude of dielectric response. Finally, we present the criteria for local dielectric constant measurements with a high lateral resolution in polar liquid media.

Effect of Bi doping on morphotropic phase boundary and dielectric properties of PZT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, Shraddha; Acharya, Smita, E-mail: saha275@yahoo.com

2016-05-23

In our present attempt, Pb{sub (1-x)}Bi{sub x}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} [PBZT] {where x = 0, 0.05, 0.1} is synthesized by sol-gel route. Effect of Bi addition on structure, sinterability and dielectric properties are observed. The presence of morphotropic phase boundary (coexistence of tetragonal and rhombohedral symmetry) is confirmed by X-ray diffraction. Enhancement of sinterability after Bi doping is observed through a systematic sintering program. Frequency and temperature dependent dielectric constant are studied. Bi doping in PZT is found to enhance room temperature dielectric constant. However, at high temperature the dielectric constant of pure PZT is more than that of dopedmore » PZT.« less

Super Dielectric Materials

PubMed Central

Fromille, Samuel; Phillips, Jonathan

2014-01-01

Evidence is provided here that a class of materials with dielectric constants greater than 105 at low frequency (<10−2 Hz), herein called super dielectric materials (SDM), can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 108 in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 104. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc.), filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution), herein called New Paradigm Super (NPS) capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å) of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to “short” the individual water droplets. Potentially NPS capacitor stacks can surpass “supercapacitors” in volumetric energy density. PMID:28788298

Super Dielectric Materials.

PubMed

Fromille, Samuel; Phillips, Jonathan

2014-12-22

Evidence is provided here that a class of materials with dielectric constants greater than 10⁵ at low frequency (<10 -2 Hz), herein called super dielectric materials (SDM), can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 10⁸ in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 10⁴. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc. ), filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution), herein called New Paradigm Super (NPS) capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å) of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to "short" the individual water droplets. Potentially NPS capacitor stacks can surpass "supercapacitors" in volumetric energy density.

Material with high dielectric constant, low dielectric loss, and good mechanical and thermal properties produced using multi-wall carbon nanotubes wrapped with poly(ether sulphone) in a poly(ether ether ketone) matrix

NASA Astrophysics Data System (ADS)

Zhang, Shuling; Wang, Hongsong; Wang, Guibin; Jiang, Zhenhua

2012-07-01

A material with high dielectric constant, low dielectric loss, and good mechanical and thermal properties was produced using multi-wall carbon nanotubes (MWCNTs) wrapped with poly(ether sulphone) (PES) dispersed in a poly(ether ether ketone) (PEEK) matrix. The material was fabricated using melt-blending, and MWCNT/PEEK composites show different degrees of improvement in the measured dielectric, mechanical, and thermal properties as compared to pure PEEK. This is attributed to the high conductivity of MWCNTs, the effect of wrapping MWCNTs with PES, the good dispersion of the wrapped MWCNTs in PEEK, and the strong interfacial adhesion between the wrapped MWCNTs and the PEEK.

Holmium hafnate: An emerging electronic device material

NASA Astrophysics Data System (ADS)

Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

2015-03-01

We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

Dielectric Properties of BST/(Y 2O 3) x(ZrO 2) 1-x/BST Trilayer Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahoo, Santosh K.; Misra, D.

2011-01-31

Thin films of Ba1-xSrxTiO3 (BST) are being actively investigated for applications in dynamic random access memories (DRAM) because of their properties such as high dielectric constant, low leakage current, and high dielectric breakdown strength. Various approaches have been used to improve the dielectric properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in dielectric constant as well as dielectric loss. In this work the effect of Y2O3 doped ZrO2 on the dielectric properties of BST/ZrO2/BST trilayer structure ismore » studied. The structure Ba0.8Sr0.2TiO3/(Y2O3)x(ZrO2)1-x/Ba0.8Sr0.2TiO3 is deposited by a sol-gel process on platinized Si substrate. The composition (x) of the middle layer is varied while keeping the total thickness of the trilayer film constant. The dielectric constant of the multilayer film decreases with the increase of Y2O3 amount in the film whereas there is a slight variation in dielectric loss. In Y2O3 doped multilayer thin films, the dielectric loss is lower in comparison to other films and also there is good frequency stability in the loss in the measured frequency range and hence very suitable for microwave device applications.« less

Microwave characterization of slotline on high resistivity silicon for antenna feed network

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Taub, Susan R.; Lee, Richard Q.; Young, Paul G.

1993-01-01

Conventional silicon wafers have low resistivity and consequently unacceptably high value of dielectric attenuation constant. Microwave circuits for phased array antenna systems fabricated on these wafers therefore have low efficiency. By choosing a silicon substrate with sufficiently high resistivity it is possible to make the dielectric attenuation constant of the interconnecting microwave transmission lines approach those of GaAs or InP. In order for this to be possible, the transmission lines must be characterized. In this presentation, the effective dielectric constant (epsilon sub eff) and attenuation constant (alpha) of a slotline on high resistivity (5000 to 10 000 ohm-cm) silicon wafer will be discussed. The epsilon sub eff and alpha are determined from the measured resonant frequencies and the corresponding insertion loss of a slotline ring resonator. The results for slotline will be compared with microstrip line and coplanar waveguide.

Broadband dielectric spectroscopy on single-crystalline and ceramic CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Krohns, S.; Lunkenheimer, P.; Ebbinghaus, S. G.; Loidl, A.

2007-07-01

The authors present dielectric measurements of the colossal dielectric constant material CaCu3Ti4O12 extending up to 1.3GHz also covering so far only rarely investigated single-crystalline samples. Special emphasis is put on the second relaxation reported in several works on polycrystals, which the authors detect also in single crystals. For polycrystalline samples, the authors provide a recipe to achieve values of the dielectric constant as high as in single crystals.

Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

PubMed

Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

2013-10-18

Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The nanocrystal/furfuryl alcohol dispersions are suitable for the fabrication of thin films by chemical deposition techniques, including spin-coating, printing or a spraying process. To demonstrate the application of this technique to device fabrication, a multilayer capacitor with capacitance of 0.83 nF mm(-2) at 1 MHz is presented.

Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2-xO3 (x=0-2) dielectrics on TiN for dynamic random access memory applications

NASA Astrophysics Data System (ADS)

Schroeder, T.; Lupina, G.; Sohal, R.; Lippert, G.; Wenger, Ch.; Seifarth, O.; Tallarida, M.; Schmeisser, D.

2007-07-01

Engineered dielectrics combined with compatible metal electrodes are important materials science approaches to scale three-dimensional trench dynamic random access memory (DRAM) cells. Highly insulating dielectrics with high dielectric constants were engineered in this study on TiN metal electrodes by partly substituting Al in the wide band gap insulator Al2O3 by Pr cations. High quality PrAlO3 metal-insulator-metal capacitors were processed with a dielectric constant of 19, three times higher than in the case of Al2O3 reference cells. As a parasitic low dielectric constant interface layer between PrAlO3 and TiN limits the total performance gain, a systematic nondestructive synchrotron x-ray photoelectron spectroscopy study on the interface chemistry of PrxAl2-xO3 (x =0-2) dielectrics on TiN layers was applied to unveil its chemical origin. The interface layer results from the decreasing chemical reactivity of PrxAl2-xO3 dielectrics with increasing Pr content x to reduce native Ti oxide compounds present on unprotected TiN films. Accordingly, PrAlO3 based DRAM capacitors require strict control of the surface chemistry of the TiN electrode, a parameter furthermore of importance to engineer the band offsets of PrxAl2-xO3/TiN heterojunctions.

Dielectric characteristics of CaCu3Ti4O12/P(VDF-TrFE) nanocomposites

NASA Astrophysics Data System (ADS)

Zhang, Lin; Shan, Xiaobing; Wu, Peixuan; Cheng, Z.-Y.

2012-06-01

Composite thin film is highly desirable for the dielectric applications. In order to develop composite thin film, a nanocomposite, in which nanosized CaCu3Ti4O12 (CCTO) particles are used as filler and P(VDF-TrFE) 55/45 mol% copolymer is used as polymer matrix, is investigated. The contents of CCTO in the nanocomposites range from 0% to 50 vol%. The dielectric property of these nanocomposites was characterized at frequencies ranging from 100 Hz to 1 MHz and at temperatures ranging from 200 K to 370 K. A dielectric constant of 62 with a loss of 0.05 was obtained in nanocomposite with 50 vol% CCTO at room temperature at 1 kHz. At the phase transition temperature (˜340 K) of the copolymer, a dielectric constant of 150 with a loss less than 0.1 was obtained in this nanocomposite. It is found that the dielectric loss of the nanocomposites is dominated by the polymer which has a relaxation process. Comparing to composites made using microsized CCTO, the nanocomposites exhibit a much lower dielectric loss and a lower dielectric constant. This indicates that the nanosized CCTO particles have a lower dielectric constant than the microsized CCTO particles.

The p- T phase diagram of KNbO 3 by a dielectric constant measurement

NASA Astrophysics Data System (ADS)

Kobayashi, Y.; Endo, S.; Deguchi, K.; Ming, L. C.; Zou, G.

2001-11-01

A dielectric constant measurement was carried out on perovskite-type ferroelectrics KNbO 3 over a wide range of temperature under high pressure. The temperature- and pressure-dependence of the dielectric constant clarified that all temperatures of the transitions from the ferroelectric rhombohedral to orthorhombic, to tetragonal and then to the paraelectric cubic phase, decrease with increasing pressure. These results indicate that the orthorhombic-tetragonal transition takes place at 8.5 GPa and the tetragonal-cubic transition at 11 GPa, at room temperature.

Heat treatment effects on dielectric properties of SRFe{sub 12}O{sub 19} hexaferrite prepared by an SHS route

DOE Office of Scientific and Technical Information (OSTI.GOV)

Panchal, Nital R.; Jotania, Rajshree B., E-mail: natal_panchal@yahoo.co.in, E-mail: rbjotania@gmail.com

2011-07-01

The M-type Strontium Hexaferrite SRFe{sub 12}O{sub 19} particles were prepared by a Self propagating High temperature Synthesis (SHS) route. Precursors were heated under two different conditions: microwave heating for 30 minutes and sintered at 950 deg C for 4 hrs. The dielectric properties: dielectric constant ({epsilon}{sup '}), dielectric loss (tan {delta} ) and ac conductivity ({sigma}{sub ac}) were measured at room temperature in the frequency range from 100 Hz to 2 MHz. The samples present a non-linear behavior for the dielectric constant at 1 kHz, 100 kHz and 2 MHz. The dielectric properties of prepared Strontium Hexaferrite samples were discussedmore » in view of applications as a material for microwave devices, permanent magnets and high density magnetic recording media. (author)« less

Significantly improved dielectric performances of nanocomposites via loading two-dimensional core-shell structure Bi2Te3@SiO2 nanosheets

NASA Astrophysics Data System (ADS)

Chen, Jianwen; Wang, Xiucai; Yu, Xinmei; Fan, Yun; Duan, Zhikui; Jiang, Yewen; Yang, Faquan; Zhou, Yuexia

2018-07-01

Polymer/semiconductor-insulator nanocomposites can display high dielectric constants with a relatively low dissipation factor under low electric fields, and thus seem to promising for high energy density capacitors. Here, a novel nanocomposite films is developed by loading two-dimensional (2D) core-shell structure Bi2Te3@SiO2 nanosheets in the poly (vinylidene fluoride-hexafluoro propylene) (P(VDF-HFP)) polymer matrix. The 2D Bi2Te3 nanosheets were prepared through simple microwave-assisted method. The experimental results suggesting that the SiO2 shell layer between the fillers and polymer matrix could effectively improve the dielectric constant, dielectric loss, AC conductivity, and breakdown strength of composites films. The composite films load with 10 vol.% 2D Bi2Te3@SiO2 nanosheets exhibits a high dielectric constant of 70.3 at 1 kHz and relatively low dielectric loss of 0.058 at 1 kHz. The finite element simulation of electric field and electric current density distribution revealed that the SiO2 shell layer between the fillers and polymer matrix could effectively improve the energy loss, local electric field strength, and breakdown strength of composite films. Therefore, this work will provide a promising route to achieve high-performance capacitors.

Large dielectric constant in zirconia polypyrrole hybrid nanocomposites.

PubMed

Dey, Ashis; De, S K

2007-06-01

Zirconia nanoparticles have been synthesized by a novel two-reverse emulsion technique and combined with polypyrrole (PPY) to form ZrO2-PPY nanocomposites. Complex impedance and dielectric permittivity of ZrO2-PPY nanocomposite have been investigated as a function of frequency and temperature for different compositions. The composite samples are characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning and transmission electron microscopy. The composites reveal ordered semiconducting behaviour. Polypyrrole is the major component in electrical transport process of the samples. A very large dielectric constant of about 12,000 at room temperature has been observed. The colossal dielectric constant is mainly dominated by interfacial polarization due to Maxwell-Wagner relaxation effect. Two completely separate groups of dielectric relaxation have been observed. The low frequency dielectric relaxation arises from surface defect states of zirconia nanoparticles. The broad peak at high frequency is due to Maxwell-Wagner type polarization.

A Facile Strategy to Enhance the Dielectric and Mechanical Properties of MWCNTs/PVDF Composites with the Aid of MMA-co-GMA Copolymer

PubMed Central

Song, Shixin; Xia, Shan; Jiang, Shangkun; Lv, Xue; Sun, Shulin; Li, Quanming

2018-01-01

A facile strategy is adopted to prepare carboxylic functionalized multiwalled carbon nanotube (c-MWCNT) modified high dielectric constant (high-k) poly(vinylidene fluoride) (PVDF) composites with the aid of methyl methacrylate-co-glycidyl methacrylate copolymer (MG). The MG is miscible with PVDF and the epoxy groups of the copolymer can react with the carboxylic groups of c-MWCNT, which induce the uniform dispersion of c-MWCNT and a form insulator layer on the surface of c-MWCNT. The c-MWCNTs/MG/PVDF composites with 8 vol % c-MWCNT present excellent dielectric properties with high dielectric constant (~448) and low dielectric loss (~2.36) at the frequency of 1 KHz, the dielectric loss is much lower than the c-MWCNT/PVDF composites without MG. The obvious improvement in dielectric properties ascribes to the existence of MG, which impede the direct contact of c-MWCNTs and PVDF and avoid the formation of conductive network. Therefore, we propose a practical and simple strategy for preparing composites with excellent dielectric properties, which are promising for applications in electronics devices. PMID:29495491

A Facile Strategy to Enhance the Dielectric and Mechanical Properties of MWCNTs/PVDF Composites with the Aid of MMA-co-GMA Copolymer.

PubMed

Song, Shixin; Xia, Shan; Jiang, Shangkun; Lv, Xue; Sun, Shulin; Li, Quanming

2018-02-27

A facile strategy is adopted to prepare carboxylic functionalized multiwalled carbon nanotube (c-MWCNT) modified high dielectric constant (high- k ) poly(vinylidene fluoride) (PVDF) composites with the aid of methyl methacrylate-co-glycidyl methacrylate copolymer (MG). The MG is miscible with PVDF and the epoxy groups of the copolymer can react with the carboxylic groups of c-MWCNT, which induce the uniform dispersion of c-MWCNT and a form insulator layer on the surface of c-MWCNT. The c-MWCNTs/MG/PVDF composites with 8 vol % c-MWCNT present excellent dielectric properties with high dielectric constant (~448) and low dielectric loss (~2.36) at the frequency of 1 KHz, the dielectric loss is much lower than the c-MWCNT/PVDF composites without MG. The obvious improvement in dielectric properties ascribes to the existence of MG, which impede the direct contact of c-MWCNTs and PVDF and avoid the formation of conductive network. Therefore, we propose a practical and simple strategy for preparing composites with excellent dielectric properties, which are promising for applications in electronics devices.

Microwave assisted synthesis and characterization of barium titanate nanoparticles for multi layered ceramic capacitor applications.

PubMed

Thirumalai, Sundararajan; Shanmugavel, Balasivanandha Prabu

2011-01-01

Barium titanate is a common ferroelectric electro-ceramic material having high dielectric constant, with photorefractive effect and piezoelectric properties. In this research work, nano-scale barium titanate powders were synthesized by microwave assisted mechano-chemical route. Suitable precursors were ball milled for 20 hours. TGA studies were performed to study the thermal stability of the powders. The powders were characterized by XRD, SEM and EDX Analysis. Microwave and Conventional heating were performed at 1000 degrees C. The overall heating schedule was reduced by 8 hours in microwave heating thereby reducing the energy and time requirement. The nano-scale, impurity-free and defect-free microstructure was clearly evident from the SEM micrograph and EDX patterns. LCR meter was used to measure the dielectric constant and dielectric loss values at various frequencies. Microwave heated powders showed superior dielectric constant value with low dielectric loss which is highly essential for the fabrication of Multi Layered Ceramic Capacitors.

Polarized pressure dependence of the anisotropic dielectric functions of highly oriented poly(p-phenylene vinylene)

NASA Astrophysics Data System (ADS)

Morandi, V.; Galli, M.; Marabelli, F.; Comoretto, D.

2010-04-01

In this work, we combined an experimental technique and a detailed data analysis to investigate the influence of an applied pressure on the anisotropic dielectric functions of highly oriented poly(p-phenylene vinylene) (PPV). The dielectric constants were derived from polarized reflectance spectra recorded through a diamond anvil cell up to 50 kbar. The presence of the diamond anvils strongly affects measured spectra requiring the development in an optical model able to take all spurious effects into account. A parametric procedure was then applied to derive the complex dielectric constants for both polarizations as a function of pressure. A detailed analysis of their pressure dependence allows addressing the role of intermolecular interactions and electron-phonon coupling in highly oriented PPV.

Ferroelectric, elastic, piezoelectric, and dielectric properties of Ba(Ti0.7Zr0.3)O3-x(Ba0.82Ca0.18)TiO3 Pb-free ceramics

NASA Astrophysics Data System (ADS)

Yuan, Ruihao; Xue, Deqing; Zhou, Yumei; Ding, Xiangdong; Sun, Jun; Xue, Dezhen

2017-07-01

We designed and synthesized a pseudo-binary Pb-free system, Ba(Ti0.7Zr0.3)O3-x(Ba0.82Ca0.18)TiO3, by combining a rhombohedral end (with only cubic to rhombohedral ferroelectric phase transition) and a tetragonal end (with only cubic to tetragonal ferroelectric phase transition). The established composition-temperature phase diagram is characterized by a tricritical point type morphotropic phase boundary (MPB), and the MPB composition has better ferroelectric, piezoelectric, and dielectric properties than the compositions deviating from MPB. Moreover, a full set of material constants (including elastic stiffness constants, elastic compliance constants, piezoelectric constants, dielectric constants, and electromechanical coupling factors) of the MPB composition are determined using a resonance method. The good piezoelectric performance of the MPB composition can be ascribed to the high dielectric constants, elastic softening, and large electromechanical coupling factor.

Thermosetting resins with high fractions of free volume and inherently low dielectric constants.

PubMed

Lin, Liang-Kai; Hu, Chien-Chieh; Su, Wen-Chiung; Liu, Ying-Ling

2015-08-18

This work demonstrates a new class of thermosetting resins, based on Meldrum's acid (MA) derivatives, which have high fractions of free volume and inherently low k values of about 2.0 at 1 MHz. Thermal decomposition of the MA groups evolves CO2 and acetone to create air-trapped cavities so as to reduce the dielectric constants.

Electronic transport in two-dimensional high dielectric constant nanosystems

DOE PAGES

Ortuño, M.; Somoza, A. M.; Vinokur, V. M.; ...

2015-04-10

There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects. We find that the characteristic energy governing electronic transport scales logarithmically with either system size or electrostatic screeningmore » length depending on which one is shorter. Our results are relevant well beyond their immediate context, explaining, for example, recent experimental observations of logarithmic size dependence of electric conductivity of thin superconducting films in the critical vicinity of superconductor-insulator transition where a giant dielectric constant develops. Our findings mark a radical departure from the orthodox view of conductivity in 2D systems as a local characteristic of materials and establish its macroscopic global character as a generic property of high-dielectric constant 2D nanomaterials.« less

Electronic transport in two-dimensional high dielectric constant nanosystems.

PubMed

Ortuño, M; Somoza, A M; Vinokur, V M; Baturina, T I

2015-04-10

There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects. We find that the characteristic energy governing electronic transport scales logarithmically with either system size or electrostatic screening length depending on which one is shorter. Our results are relevant well beyond their immediate context, explaining, for example, recent experimental observations of logarithmic size dependence of electric conductivity of thin superconducting films in the critical vicinity of superconductor-insulator transition where a giant dielectric constant develops. Our findings mark a radical departure from the orthodox view of conductivity in 2D systems as a local characteristic of materials and establish its macroscopic global character as a generic property of high-dielectric constant 2D nanomaterials.

Dielectric Performance of a High Purity HTCC Alumina at High Temperatures - a Comparison Study with Other Polycrystalline Alumina

NASA Technical Reports Server (NTRS)

Chen, Liangyu

2014-01-01

A very high purity (99.99+%) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this alumina material for co-firing processing. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96% polycrystalline alumina (96% Al2O3), where 96% alumina was used as the benchmark. A prototype packaging system based on regular 96% alumina with Au thickfilm metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500 C. In order to evaluate this new high purity HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96% alumina and a previously tested LTCC alumina from room temperature to 550 C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96% alumina and a selected LTCC alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

Dielectric studies on PEG-LTMS based polymer composites

NASA Astrophysics Data System (ADS)

Patil, Ravikumar V.; Praveen, D.; Damle, R.

2018-02-01

PEG LTMS based polymer composites were prepared and studied for dielectric constant variation with frequency and temperature as a potential candidate with better dielectric properties. Solution cast technique is used for the preparation of polymer composite with five different compositions. Samples show variation in dielectric constant with frequency and temperature. Dielectric constant is large at low frequencies and higher temperatures. Samples with larger space charges have shown larger dielectric constant. The highest dielectric constant observed was about 29244 for PEG25LTMS sample at 100Hz and 312 K.

Dielectric properties of single wall carbon nanotubes-based gelatin phantoms

NASA Astrophysics Data System (ADS)

Altarawneh, M. M.; Alharazneh, G. A.; Al-Madanat, O. Y.

In this work, we report the dielectric properties of Single wall Carbon Nanotubes (SWCNTs)-based phantom that is mainly composed of gelatin and water. The fabricated gelatin-based phantom with desired dielectric properties was fabricated and doped with different concentrations of SWCNTs (e.g., 0%, 0.05%, 0.10%, 0.15%, 0.2%, 0.4% and 0.6%). The dielectric constants (real ɛ‧ and imaginary ɛ‧‧) were measured at different positions for each sample as a function of frequency (0.5-20GHz) and concentrations of SWCNTs and their averages were found. The Cole-Cole plot (ɛ‧ versus ɛ‧‧) was obtained for each concentration of SWCNTs and was used to obtain the static dielectric constant ɛs, the dielectric constant at the high limit of frequency ɛ∞ and the average relaxation time τ. The measurements showed that the fabricated samples are in good homogeneity and the SWCNTs are dispersed well in the samples as an acceptable standard deviation is achieved. The study showed a linear increase in the static dielectric constant ɛs and invariance of the average relaxation time τ and the value of ɛ∞ at room temperature for the investigated concentrations of SWCNTs.

Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites.

PubMed

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D; Hill, Curtis W; Brewer, Jeffrey C; Tucker, Dennis S; Cheng, Z-Y

2016-10-21

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu 3 Ti 4 O 12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced-up to about 10 times - by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10 -1 ). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing.

Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites

NASA Astrophysics Data System (ADS)

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D.; Hill, Curtis W.; Brewer, Jeffrey C.; Tucker, Dennis S.; Cheng, Z.-Y.

2016-10-01

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu3Ti4O12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced-up to about 10 times - by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10-1). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing.

Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites

PubMed Central

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D.; Hill, Curtis W.; Brewer, Jeffrey C.; Tucker, Dennis S.; Cheng, Z.-Y.

2016-01-01

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu3Ti4O12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced–up to about 10 times – by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10−1). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing. PMID:27767184

Off Axis Growth of Strontium Titanate Films with High Dielectric Constant Tuning and Low Loss

DTIC Science & Technology

2003-04-03

80309, U.S.A. ABSTRACT We have measured the nonlinear dielectric properties of strontium titanate (STO) thin films grown on neodymium gallate (NGO...and lanthanum aluminate (LAO) substrates. The films prepared by off-axis pulsed laser deposition were characterized by their dielectric constant and...performed on the films prepared with the off axis growth. EXPERIMENTAL Pulsed laser deposition (PLD) was used to deposit STO films on lanthanum

A flexible insulator of a hollow SiO2 sphere and polyimide hybrid for flexible OLEDs.

PubMed

Kim, Min Kyu; Kim, Dong Won; Shin, Dong Wook; Seo, Sang Joon; Chung, Ho Kyoon; Yoo, Ji Beom

2015-01-28

The fabrication of interlayer dielectrics (ILDs) in flexible organic light-emitting diodes (OLEDs) not only requires flexible materials with a low dielectric constant, but also ones that possess the electrical, thermal, chemical, and mechanical properties required for optimal device performance. Porous polymer-silica hybrid materials were prepared to satisfy these requirements. Hollow SiO2 spheres were synthesized using atomic layer deposition (ALD) and a thermal calcination process. The hybrid film, which consists of hollow SiO2 spheres and polyimide, shows a low dielectric constant of 1.98 and excellent thermal stability up to 500 °C. After the bending test for 50 000 cycles, the porous hybrid film exhibits no degradation in its dielectric constant or leakage current. These results indicate that the hybrid film made up of hollow SiO2 spheres and polyimide (PI) is useful as a flexible insulator with a low dielectric constant and high thermal stability for flexible OLEDs.

Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability.

PubMed

Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

2016-11-09

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (T g ) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100-200 kHz and in the temperature range of 25-300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C -1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature.

Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability

NASA Astrophysics Data System (ADS)

Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

2016-11-01

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (Tg) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100-200 kHz and in the temperature range of 25-300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C-1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature.

Piezoelectric ceramics with high dielectric constants for ultrasonic medical transducers.

PubMed

Hosono, Yasuharu; Yamashita, Yohachi

2005-10-01

Complex system ceramics Pb(Sc(1/2)Nb(1/2))O3-Pb(Mg(1/3)Nb(2/3))O3-Pb(Ni(1/2)Nb(1/2))O3-(Pb0.965,Sr0.035) (Zr,Ti)O3 (PSN-PMN-PNN-PSZT abbreviated PSMNZT) have been synthesized by the conventional technique, and dielectric and piezoelectric properties of the ceramics have been investigated for ultrasonic medical transducers. High capacitances of the transducers are desired in order to match the electrical impedance between the transducers and the coaxial cable in array probes. Although piezoelectric ceramics that have high dielectric constants (epsilon33t/epsilon0 > 5000, k'33 < 70%) are produced in many foundries, the dielectric constants are insufficient. However, we have reported that low molecular mass B-site ions in the lead-perovskite structures are important in realizing better dielectric and piezoelectric properties. We focused on the complex system ceramics PSMNZT that consists of light B-site elements. The maximum dielectric constant, epsilon33T/epsilon0 = 7, 200, was confirmed in the ceramics, where k'33 = 69%, d33 = 940 pC/N, and T(c) = 135 degrees C were obtained. Moreover, pulse-echo characteristics were simulated using the Mason model. The PSMNZT ceramic probe showed echo amplitude about 5.5 dB higher than that of the conventional PZT ceramic probe (PZT-5H type). In this paper, the electrical properties of the PSMNZT ceramics and the simulation results for pulse-echo characteristics of the phased-array probes are introduced.

Preparation of a Carbon Doped Tissue-Mimicking Material with High Dielectric Properties for Microwave Imaging Application

PubMed Central

Lan, Siang-Wen; Weng, Min-Hang; Yang, Ru-Yuan; Chang, Shoou-Jinn; Chung, Yaoh-Sien; Yu, Tsung-Chih; Wu, Chun-Sen

2016-01-01

In this paper, the oil-in-gelatin based tissue-mimicking materials (TMMs) doped with carbon based materials including carbon nanotube, graphene ink or lignin were prepared. The volume percent for gelatin based mixtures and oil based mixtures were both around 50%, and the doping amounts were 2 wt %, 4 wt %, and 6 wt %. The effect of doping material and amount on the microwave dielectric properties including dielectric constant and conductivity were investigated over an ultra-wide frequency range from 2 GHz to 20 GHz. The coaxial open-ended reflection technology was used to evaluate the microwave dielectric properties. Six measured values in different locations of each sample were averaged and the standard deviations of all the measured dielectric properties, including dielectric constant and conductivity, were less than one, indicating a good uniformity of the prepared samples. Without doping, the dielectric constant was equal to 23 ± 2 approximately. Results showed with doping of carbon based materials that the dielectric constant and conductivity both increased about 5% to 20%, and the increment was dependent on the doping amount. By proper selection of doping amount of the carbon based materials, the prepared material could map the required dielectric properties of special tissues. The proposed materials were suitable for the phantom used in the microwave medical imaging system. PMID:28773678

Dielectric constants of soils at microwave frequencies-2

NASA Technical Reports Server (NTRS)

Wang, J.; Schmugge, T.; Williams, D.

1978-01-01

The dielectric constants of several soil samples were measured at frequencies of 5 and 19 GHz using the infinite transmission line method. The results of these measurements are presented and discussed with respect to soil types and texture structures. A comparison is made with other measurements at 1.4 GHz. At all three frequencies, the dependence of dielectric constant on soil moisture can be approximated by two straight lines. At low moisture, the slope is less than at high moisture level. The intersection of the two lines is believed to be a function of soil texture.

Solid electrolytes

DOEpatents

Abraham, Kuzhikalail M.; Alamgir, Mohamed

1993-06-15

This invention pertains to Li ion (Li.sup.+) conductive solid polymer electrolytes composed of solvates of Li salts immobilized (encapsulated) in a solid organic polymer matrix. In particular, this invention relates to solid polymer electrolytes derived by immobilizing complexes (solvates) formed between a Li salt such as LiAsF.sub.6, LiCF.sub.3 SO.sub.3 or LiClO.sub.4 and a mixture of aprotic organic solvents having high dielectric constants such as ethylene carbonate (EC) (dielectric constant=89.6) and propylene carbonate (PC) (dielectric constant=64.4) in a polymer matrix such as polyacrylonitrile, poly(tetraethylene glycol diacrylate), or poly(vinyl pyrrolidinone).

An empirical model for the complex dielectric permittivity of soils as a function of water content

NASA Technical Reports Server (NTRS)

Wang, J. R.; Chmugge, T. J.

1978-01-01

The recent measurements on the dielectric properties of soils shows that the variation of dielectric constant with moisture content depends on soil types. The observed dielectric constant increases only slowly with moisture content up to a transition point. Beyond the transition it increases rapidly with moisture content. The moisture value of transition region was found to be higher for high clay content soils than for sandy soils. Many mixing formulas were compared with, and were found incompatible with, the measured dielectric variations of soil-water mixtures. A simple empirical model was proposed to describe the dielectric behavior of ths soil-water mixtures. The relationship between transition moisture and wilting point provides a means of estimating soil dielectric properties on the basis of texture information.

Cast dielectric composite linear accelerator

DOEpatents

Sanders, David M [Livermore, CA; Sampayan, Stephen [Manteca, CA; Slenes, Kirk [Albuquerque, NM; Stoller, H M [Albuquerque, NM

2009-11-10

A linear accelerator having cast dielectric composite layers integrally formed with conductor electrodes in a solventless fabrication process, with the cast dielectric composite preferably having a nanoparticle filler in an organic polymer such as a thermosetting resin. By incorporating this cast dielectric composite the dielectric constant of critical insulating layers of the transmission lines of the accelerator are increased while simultaneously maintaining high dielectric strengths for the accelerator.

Nonlinear dielectric effects in liquids: a guided tour

NASA Astrophysics Data System (ADS)

Richert, Ranko

2017-09-01

Dielectric relaxation measurements probe how the polarization of a material responds to the application of an external electric field, providing information on structure and dynamics of the sample. In the limit of small fields and thus linear response, such experiments reveal the properties of the material in the same thermodynamic state it would have in the absence of the external field. At sufficiently high fields, reversible changes in enthalpy and entropy of the system occur even at constant temperature, and these will in turn alter the polarization responses. The resulting nonlinear dielectric effects feature field induced suppressions (saturation) and enhancements (chemical effect) of the amplitudes, as well as time constant shifts towards faster (energy absorption) and slower (entropy reduction) dynamics. This review focuses on the effects of high electric fields that are reversible and observed at constant temperature for single component glass-forming liquids. The experimental challenges involved in nonlinear dielectric experiments, the approaches to separating and identifying the different sources of nonlinear behavior, and the current understanding of how high electric fields affect dielectric materials will be discussed. Covering studies from Debye’s initial approach to the present state-of-the-art, it will be emphasized what insight can be gained from the nonlinear responses that are not available from dielectric relaxation results obtained in the linear regime.

Dielectric and modulus analysis of the photoabsorber Cu2SnS3

NASA Astrophysics Data System (ADS)

Lahlali, S.; Essaleh, L.; Belaqziz, M.; Chehouani, H.; Alimoussa, A.; Djessas, K.; Viallet, B.; Gauffier, J. L.; Cayez, S.

2017-12-01

Dielectric properties of the ternary semiconductor compound Cu2SnS3 is studied for the first time in the high temperature range from 300 °C to 440 °C with the frequency range 1 kHz to 1 MHz. The dielectric constant ε ‧ and dielectric loss tan (δ) were observed to increase with temperature and decrease rapidly with frequency to remains constant at high frequencies. The variation of the dielectric loss Ln (ε ") with L n (ω) was found to follow the empirical law, ε " = B ω m (T). The dielectric data were analyzed using complex electrical modulus M* at various temperatures. The activation energy responsible for the relaxation is estimated from the analysis of the modulus spectra. The value of the hopping barrier potential is estimated from the dielectric loss and compared with the value previously obtained from ac-conductivity. These results are critical for understanding the behavior of based polycrystalline family of Cu2SnS3 for absorber materials in solar-cells.

Dielectric relaxation of near-percolated carbon nanofiber polypropylene composites

NASA Astrophysics Data System (ADS)

Paleo, A. J.; Zille, A.; Van Hattum, F. W.; Ares-Pernas, A.; Agostinho Moreira, J.

2017-07-01

In this work, the morphological, structural and dielectric analysis of near-percolated polypropylene (PP) composites containing carbon nanofibers (CNF) processing by melt-mixing are investigated. Whereas the morphological analysis shows that CNF exhibit some tendency to agglomerate within the PP matrix, the structural analysis showed first a general decrease in the intensity of the IR bands as a consequence of the interaction between carbon nanofibers and PP matrix and second an increase of the crystallinity degree of the PP/CNF composites when compared to the pure PP. The dielectric analysis demonstrates enhanced dielectric constants (from 2.97 for neat polymer to 9.7 for 1.9 vol% loaded composites at 200 Hz) and low dielectric losses. Furthermore, the dielectric relaxation for composites with concentrations in the vicinity of percolation is evidenced and well described by the generalized polydispersive Cole-Cole model from which the values of static dielectric constant (εs) , high frequency dielectric constant (ε∞) , distribution of relaxation time (α) and mean relaxation time (τo), are determined, suggesting that this latter analysis constitutes a strong tool for understanding the relationships between microstructure and dielectric properties in this type of polymer composites.

Influence of rare earth ion doping (Ce and Dy) on electrical and magnetic properties of cobalt ferrites

NASA Astrophysics Data System (ADS)

Hashim, Mohd.; Raghasudha, M.; Meena, Sher Singh; Shah, Jyoti; Shirsath, Sagar E.; Kumar, Shalendra; Ravinder, D.; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

2018-03-01

Ce and Dy substituted Cobalt ferrites with the chemical composition CoCexDyxFe2-2xO4 (x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) were synthesized through the chemical route, citrate-gel auto-combustion method. The structural characterization was carried out with the help of XRD Rieveld analysis, SEM and EDAX analysis. Formation of spinel cubic structure of the ferrites was confirmed by XRD analysis. SEM and EDAX results show that the particles are homogeneous with slight agglomeration without any impurity pickup. The effect of RE ion doping (Ce and Dy) on the dielectric, magnetic and impedance studies was systematically investigated by LCR meter, Vibrating Sample Magnetometer and Impedance analyzer respectively at room temperature in the frequency range of 10 Hz-10 MHz. Various dielectric parameters viz., dielectric constant, dielectric loss and ac conductivity were measured. The dielectric constant of all the ferrite compositions shows normal dielectric dispersion of ferrites with frequency. Impedance analysis confirms that the conduction in present ferrites is majorly due to the grain boundary mechanism. Ferrite sample with x = 0.03 show high dielectric constant, low dielectric loss and hence can be utilized in high frequency electromagnetic devices. Magnetization measurements indicate that with increase in Ce and Dy content in cobalt ferrites, the magnetization values decreased and coercivity has increased.

Low-Dielectric Polyimides

NASA Technical Reports Server (NTRS)

St. Clair, Anne K.; St. Clair, Terry L.; Winfree, William P.; Emerson, Bert R., Jr.

1989-01-01

New process developed to produce aromatic condensation polyimide films and coatings having dielectric constants in range of 2.4 to 3.2. Materials better electrical insulators than state-of-the-art commercial polyimides. Several low-dielectric-constant polyimides have excellent resistance to moisture. Useful as film and coating materials for both industrial and aerospace applications where high electrical insulation, resistance to moisture, mechanical strength, and thermal stability required. Applicable to production of high-temperature and moisture-resistance adhesives, films, photoresists, and coatings. Electronic applications include printed-circuit boards, both of composite and flexible-film types and potential use in automotive, aerospace, and electronic industries.

Empirical Estimation of Local Dielectric Constants: Toward Atomistic Design of Collagen Mimetic Peptides

PubMed Central

Pike, Douglas H.; Nanda, Vikas

2017-01-01

One of the key challenges in modeling protein energetics is the treatment of solvent interactions. This is particularly important in the case of peptides, where much of the molecule is highly exposed to solvent due to its small size. In this study, we develop an empirical method for estimating the local dielectric constant based on an additive model of atomic polarizabilities. Calculated values match reported apparent dielectric constants for a series of Staphylococcus aureus nuclease mutants. Calculated constants are used to determine screening effects on Coulombic interactions and to determine solvation contributions based on a modified Generalized Born model. These terms are incorporated into the protein modeling platform protCAD, and benchmarked on a data set of collagen mimetic peptides for which experimentally determined stabilities are available. Computing local dielectric constants using atomistic protein models and the assumption of additive atomic polarizabilities is a rapid and potentially useful method for improving electrostatics and solvation calculations that can be applied in the computational design of peptides. PMID:25784456

Low percolation transitions in carbon nanotube networks dispersed in a polymer matrix: dielectric properties, simulations and experiments.

PubMed

Simoes, Ricardo; Silva, Jaime; Vaia, Richard; Sencadas, Vítor; Costa, Pedro; Gomes, João; Lanceros-Méndez, Senentxu

2009-01-21

The low concentration behaviour and the increase of the dielectric constant in carbon nanotubes/polymer nanocomposites near the percolation threshold are still not well understood. In this work, a numerical model has been developed which focuses on the effect of the inclusion of conductive fillers in a dielectric polymer matrix on the dielectric constant and the dielectric strength. Experiments have been carried out in carbon nanotubes/poly(vinylidene fluoride) nanocomposites in order to compare to the simulation results. This work shows how the critical concentration is related to the formation of capacitor networks and that these networks give rise to high variations in the electrical properties of the composites. Based on numerical studies, the dependence of the percolation transition on the preparation of the nanocomposite is discussed. Finally, based on numerical and experimental results, both ours and from other authors, the causes of anomalous percolation behaviour of the dielectric constant are identified.

Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

NASA Astrophysics Data System (ADS)

Kiyota, Yuji; Itaka, Kenji; Iwashita, Yuta; Adachi, Tetsuya; Chikyow, Toyohiro; Ogura, Atsushi

2011-06-01

We investigated zirconia (ZrO2)-based material libraries in search of new dielectric materials for dynamic random-access memory (DRAM) by combinatorial-pulsed laser deposition (combi-PLD). We found that the substitution of yttrium (Y) to Zr sites in the ZrO2 system suppressed the leakage current effectively. The metal-insulator-metal (MIM) capacitor property of this system showed a leakage current density of less than 5×10-7 A/cm2 and the dielectric constant was 20. Moreover, the addition of titanium (Ti) or tantalum (Ta) to this system caused the dielectric constant to increase to ˜25 within the allowed leakage level of 5×10-7 A/cm2. Therefore, Zr-Y-Ti-O and Zr-Y-Ta-O systems have good potentials for use as new materials with high dielectric constants of DRAM capacitors instead of silicon dioxides (SiO2).

Constant fields and constant gradients in open ionic channels.

PubMed Central

Chen, D P; Barcilon, V; Eisenberg, R S

1992-01-01

Ions enter cells through pores in proteins that are holes in dielectrics. The energy of interaction between ion and charge induced on the dielectric is many kT, and so the dielectric properties of channel and pore are important. We describe ionic movement by (three-dimensional) Nemst-Planck equations (including flux and net charge). Potential is described by Poisson's equation in the pore and Laplace's equation in the channel wall, allowing induced but not permanent charge. Asymptotic expansions are constructed exploiting the long narrow shape of the pore and the relatively high dielectric constant of the pore's contents. The resulting one-dimensional equations can be integrated numerically; they can be analyzed when channels are short or long (compared with the Debye length). Traditional constant field equations are derived if the induced charge is small, e.g., if the channel is short or if the total concentration gradient is zero. A constant gradient of concentration is derived if the channel is long. Plots directly comparable to experiments are given of current vs voltage, reversal potential vs. concentration, and slope conductance vs. concentration. This dielectric theory can easily be tested: its parameters can be determined by traditional constant field measurements. The dielectric theory then predicts current-voltage relations quite different from constant field, usually more linear, when gradients of total concentration are imposed. Numerical analysis shows that the interaction of ion and channel can be described by a mean potential if, but only if, the induced charge is negligible, that is to say, the electric field is spatially constant. Images FIGURE 1 PMID:1376159

Dielectric relaxation of high-k oxides

PubMed Central

2013-01-01

Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material. It was attributed to the enhancement of the correlations among polar nanodomain. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary. PMID:24180696

An all-organic composite actuator material with a high dielectric constant.

PubMed

Zhang, Q M; Li, Hengfeng; Poh, Martin; Xia, Feng; Cheng, Z-Y; Xu, Haisheng; Huang, Cheng

2002-09-19

Electroactive polymers (EAPs) can behave as actuators, changing their shape in response to electrical stimulation. EAPs that are controlled by external electric fields--referred to here as field-type EAPs--include ferroelectric polymers, electrostrictive polymers, dielectric elastomers and liquid crystal polymers. Field-type EAPs can exhibit fast response speeds, low hysteresis and strain levels far above those of traditional piezoelectric materials, with elastic energy densities even higher than those of piezoceramics. However, these polymers also require a high field (>70 V micro m(-1)) to generate such high elastic energy densities (>0.1 J cm(-3); refs 4, 5, 9, 10). Here we report a new class of all-organic field-type EAP composites, which can exhibit high elastic energy densities induced by an electric field of only 13 V micro m(-1). The composites are fabricated from an organic filler material possessing very high dielectric constant dispersed in an electrostrictive polymer matrix. The composites can exhibit high net dielectric constants while retaining the flexibility of the matrix. These all-organic actuators could find applications as artificial muscles, 'smart skins' for drag reduction, and in microfluidic systems for drug delivery.

Effect of crystal structure on strontium titanate thin films and their dielectric properties

NASA Astrophysics Data System (ADS)

Kampangkeaw, Satreerat

Strontium titanate (SrTiO3 or STO) has application in radio and microwave-frequency tunable capacitor devices particularly at low temperatures due to its high dielectric constant, low loss and the electric field tunability of its dielectric constant. The main goal of improving the performance in these devices is to increase the tunability and decrease the dielectric loss at the same time, especially at microwave frequencies. Thin films of STO however, show dramatic differences compared to the bulk. The dielectric constant of bulk STO increases nonlinearly from 300 at room temperature to 30000 at 4 K and the loss range is 10-3--10 -4. On the other hand. STO thin films, while showing a dielectric constant close to 300 at room temperature, typically reach a maximum between 1000 and 10000 in the 30 K to 100 K range before decreasing, and the high-loss range is 10-2--10-3. We have grown strontium titanate thin films using a pulsed laser deposition technique on substrates selected to have a small lattice mismatch between the film and substrate. Neodymium gallate (NdGaO3 or NGO) and lanthanum aluminate (LaAlO3 or LAO) substrates were good candidates due to only 1--2% mismatching. Film capacitor devices were fabricated with 25 micron gap separation. 1.5 mm total gap length and an overall 1 x 2 mm dimension using standard lithography and gold metal evaporative techniques. Their nonlinear dielectric constant and loss tangent were measured at low frequencies and also at 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position on the substrates with respect to the deposition plume axis. In the presence of DC electric fields up to +/-4 V/mum, STO films show improved dielectric tunability and low loss in regions far from the plume axis. We found that the films grown on NCO have lower dielectric loss than those on LAO due to a closer match of the NCO lattice to that of STO. We investigated the possible causes that make dielectric behavior in STO thin films different from the bulk. We characterized such film structures as lattice parameters, out-of-plane grain size, in-plane grain size, thickness, roughness, strains, and defects using ellipsometry, atomic force microscopy, and a high-resolution X-ray diffractometry. In plane grain size and percentage of defects were found to play a major role on the dielectric performance of the films.

Cavity resonator for dielectric measurements of high-ɛ, low loss materials, demonstrated with barium strontium zirconium titanate ceramics

NASA Astrophysics Data System (ADS)

Marksteiner, Quinn R.; Treiman, Michael B.; Chen, Ching-Fong; Haynes, William B.; Reiten, M. T.; Dalmas, Dale; Pulliam, Elias

2017-06-01

A resonant cavity method is presented which can measure loss tangents and dielectric constants for materials with dielectric constant from 150 to 10 000 and above. This practical and accurate technique is demonstrated by measuring barium strontium zirconium titanate bulk ferroelectric ceramic blocks. Above the Curie temperature, in the paraelectric state, barium strontium zirconium titanate has a sufficiently low loss that a series of resonant modes are supported in the cavity. At each mode frequency, the dielectric constant and loss tangent are obtained. The results are consistent with low frequency measurements and computer simulations. A quick method of analyzing the raw data using the 2D static electromagnetic modeling code SuperFish and an estimate of uncertainties are presented.

Complex oxide thin films for microelectronics

NASA Astrophysics Data System (ADS)

Suvorova, Natalya

The rapid scaling of the device dimensions, namely in metal oxide semiconductor field effect transistor (MOSFET), is reaching its fundamental limit which includes the increase in allowable leakage current due to direct tunneling with decrease of physical thickness of SiO2 gate dielectric. The significantly higher relative dielectric constant (in the range 9--25) of the gate dielectric beyond the 3.9 value of silicon dioxide will allow increasing the physical thickness. Among the choices for the high dielectric constant (K) materials for future generation MOSFET application, barium strontium titanate (BST) and strontium titanate (STO) possess one of the highest attainable K values making them the promising candidates for alternative gate oxide. However, the gate stack engineering does not imply the simple replacement of the SiO2 with the new dielectric. Several requirements should be met for successful integration of a new material. The major one is a production of high level of interface states (Dit) compared to that of SiO 2 on Si. An insertion of a thin SiO2 layer prior the growth of high-K thin film is a simple solution that helps to limit reaction with Si substrate and attains a high quality interface. However, the combination of two thin films reduces the overall K of the dielectric stack. An optimization of the SiO2 underlayer in order to maintain the interface quality yet minimize the effect on K is the focus of this work. The results from our study are presented with emphasis on the key process parameters that improve the dielectric film stack. For in-situ growth characterization of BST and STO films sputter deposited on thermally oxidized Si substrates spectroscopic ellipsometry in combination with time of flight ion scattering and recoil spectrometry have been employed. Studies of material properties have been complemented with analytical electron microscopy. To evaluate the interface quality the electrical characterization has been employed using capacitance-voltage and conductance-voltage measurements. Special attention was given to the extraction of static dielectric constant of BST and STO from the multiple film stack. The K value was found to be sensitive to the input parameters such as dielectric constant and thickness of interface layers.

Accurate Measurements of the Dielectric Constant of Seawater at L Band

NASA Technical Reports Server (NTRS)

Lang, Roger; Zhou, Yiwen; Utku, Cuneyt; Le Vine, David

2016-01-01

This paper describes measurements of the dielectric constant of seawater at a frequency of 1.413 GHz, the center of the protected band (i.e., passive use only) used in the measurement of sea surface salinity from space. The objective of the measurements is to accurately determine the complex dielectric constant of seawater as a function of salinity and temperature. A resonant cylindrical microwave cavity in transmission mode has been employed to make the measurements. The measurements are made using standard seawater at salinities of 30, 33, 35, and 38 practical salinity units over a range of temperatures from 0 degree C to 35 degree C in 5 degree C intervals. Repeated measurements have been made at each temperature and salinity. Mean values and standard deviations are then computed. The total error budget indicates that the real and imaginary parts of the dielectric constant have a combined standard uncertainty of about 0.3 over the range of salinities and temperatures considered. The measurements are compared with the dielectric constants obtained from the model functions of Klein and Swift and those of Meissner and Wentz. The biggest differences occur at low and high temperatures.

Synthesis and electromechanical characterization of a new acrylic dielectric elastomer with high actuation strain and dielectric strength

NASA Astrophysics Data System (ADS)

Hu, Wei; Niu, Xiaofan; Yang, Xinguo; Zhang, Naifang; Pei, Qibing

2013-04-01

Dielectric Elastomers (DEs) can be actuated under high electric field to produce large strains. Most high-performing DE materials such as the 3M™ VHB™ membranes are commercial products designed for industrial pressure-sensitive adhesives. The limited knowledge of the exact chemical structures of these commercial materials has made it difficult to understand the relationship between molecular structures and electromechanical properties. In this work, new acrylic elastomers based on n-butyl acrylate and acrylic acid were synthesized from monomer solutions by UV-initiated bulk polymerization. The new acrylic copolymers have a potential to obtain high dielectric constant, actuation strain, dielectric strength, and a high energy density. Silicone and ester oligomer diacrylates were also added onto the copolymer structures to suppress crystallization and to crosslink the polymer chains. Four acrylic formulations were developed with different amounts of acrylic acid. This gives a tunable stiffness, while the dielectric constant is varied from 4.3 to 7.1. The figure-of-merit performance of the best formulation is 186 % area strain, 222 MV/m of dielectric strength, and 2.7 MJ/m3 of energy density. To overcome electromechanical instability, different prestrain ratios were investigated, and under the optimized prestrain, the material has a lifetime of thousands of cycles at 120 % area strain.

Method for making surfactant-templated, high-porosity thin films

DOEpatents

Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hongyou

2001-01-01

An evaporation-induced self-assembly method to prepare a surfactant-templated thin film by mixing a silica sol, a surfactant, and a hydrophobic polymer and then evaporating a portion of the solvent during coating onto a substrate and then heating to form a liquid-phase, thin film material with a porosity greater than approximately 50 percent. The high porosity thin films can have dielectric constants less than 2 to be suitable for applications requiring low-dielectric constants. An interstitial compound can be added to the mixture, with the interstitial compound either covalently bonded to the pores or physically entrapped within the porous structure. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

47 CFR 73.184 - Groundwave field strength graphs.

Code of Federal Regulations, 2011 CFR

2011-10-01

... a dielectric constant of the ground (referred to air as unity) equal to 15 for land and 80 for sea..., Washington, DC 20554, (202) 632-7000. (c) Provided the value of the dielectric constant is near 15, the... dielectric constant, the following procedure may be used to determine the dielectric constant of the ground...

Application of the compensated Arrhenius formalism to explain the dielectric constant dependence of rates for Menschutkin reactions.

PubMed

Petrowsky, Matt; Glatzhofer, Daniel T; Frech, Roger

2013-11-21

The dependence of the reaction rate on solvent dielectric constant is examined for the reaction of trihexylamine with 1-bromohexane in a series of 2-ketones over the temperature range 25-80 °C. The rate constant data are analyzed using the compensated Arrhenius formalism (CAF), where the rate constant assumes an Arrhenius-like equation that also contains a dielectric constant dependence in the exponential prefactor. The CAF activation energies are substantially higher than those obtained using the simple Arrhenius equation. A master curve of the data is observed by plotting the prefactors against the solvent dielectric constant. The master curve shows that the reaction rate has a weak dependence on dielectric constant for values approximately less than 10 and increases more rapidly for dielectric constant values greater than 10.

Cyanoresin, cyanoresin/cellulose triacetate blends for thin film, dielectric capacitors

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S. (Inventor); Lewis, Carol R. (Inventor); Cygan, Peter J. (Inventor); Jow, T. Richard (Inventor)

1996-01-01

Non brittle dielectric films are formed by blending a cyanoresin such as cyanoethyl, hydroxyethyl cellulose (CRE) with a compatible, more crystalline resin such as cellulose triacetate. The electrical breakdown strength of the blend is increased by orienting the films by uniaxial or biaxial stretching. Blends of high molecular weight CRE with high molecular weight cyanoethyl cellulose (CRC) provide films with high dielectric constants.

Cyanoresin, cyanoresin/cellulose triacetate blends for thin film, dielectric capacitors

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping (Inventor); Jow, T. Richard (Inventor)

1993-01-01

Non-brittle dielectric films are formed by blending a cyanoresin such as cyanoethyl, hydroxyethyl cellulose (CRE) with a compatible, more crystalline resin such as cellulose triacetate. The electrical breakdown strength of the blend is increased by orienting the films by uniaxial or biaxial stretching. Blends of high molecular weight CRE with high molecular weight cyanoethyl cellulose (CRC) provide films with high dielectric constants.

Strip dielectric wave guide antenna-for the measurement of dielectric constant of low-loss materials

NASA Astrophysics Data System (ADS)

Rastogi, Alok Kumar; Tiwari, A. K.; Shrivastava, R. P.

1993-07-01

The value of dielectric constant are the most important parameters in material science technology. In micro-wave and millimeter wave circuits using dielectric materials the values of this parameters should be known accurately. It is observed that the number of methods are reported in litrature, however these methods impose difficulties in experimentation and are not very accurate. In this paper a novel approach to the measurement of the dielectric constant of low loss materials at micro-wave and millimeter wave frequencies has been discussed. In this method by using antenna theory, a metallic strip dielectric guide is taken in to constideration and band reject phenomenon of dielectric antenna is used. Frequency response of an antenna in band reject mode is a function of the dimensional parameters, such as the metallic strip period, the profile of the metallic strip and the dielectric constant of the material used. Hence if one measure the frequency responce of the antenna in band reject mode, the dielectric constant of the material is determined provided all other parameters are known. This method gives a direct measure of dielectric constant and is quite accurate as computer techniques are used for evaluating the dielectric constant. This method verified experimentally also.

Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability

PubMed Central

Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

2016-01-01

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (Tg) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100–200 kHz and in the temperature range of 25–300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C−1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature. PMID:27827436

Origin of the colossal dielectric response of Pr0.6 Ca0.4 Mn O3

NASA Astrophysics Data System (ADS)

Biškup, N.; de Andrés, A.; Martinez, J. L.; Perca, C.

2005-07-01

We report the detailed study of dielectric response of Pr0.6Ca0.4MnO3 (PCMO), a member of the manganite family showing colossal magnetoresistance. Measurements have been performed on four polycrystalline samples and four single crystals, allowing us to compare and extract the essence of dielectric response in the material. High-frequency dielectric function is found to be ɛHF=30 , as expected for the perovskite material. Dielectric relaxation is found in the frequency window of 20Hzto1MHz at temperatures of 50-200K that yields to colossal low-frequency dielectric function, i.e., the static dielectric constant. The static dielectric constant is always colossal, but varies considerably in different samples from ɛ(0)=103to105 . The measured data can be simulated very well by blocking (surface barrier) capacitance in series with sample resistance. This indicates that the large dielectric constant in PCMO arises from the Schottky barriers at electrical contacts. Measurements in magnetic field and with dc bias support this interpretation. Colossal magnetocapacitance observed in the title compound is thus attributed to extrinsic effects. Weak anomaly at the charge ordering temperature can also be attributed to interplay of sample and contact resistance. We comment on our results in the framework of related studies by other groups.

Investigation on the growth of CaCu 3Ti 4O 12 thin film and the origins of its dielectric relaxations

NASA Astrophysics Data System (ADS)

Yuan, Wen-Xiang; Hark, S. K.; Xu, H. Y.; Mei, W. N.

2012-01-01

Using the radio frequency magnetron sputtering, CaCu 3Ti 4O 12 (CCTO) thin films were deposited on platinized silicon substrates. The influence of annealing temperature on structures and morphologies of the thin films was investigated. The high annealing temperature increased the crystallinity of the films. Temperature dependence of the dielectric constant revealed an amazing different characteristic of the dielectric relaxation at ˜10 MHz, whose characteristic frequency abnormally increased with the decrease of the measuring temperature unlike the relaxations due to extrinsic origins. Meanwhile, the dielectric constant at high frequencies was close to the value derived from the first principle calculation. All these gave the evidences to ascribe this relaxation to the intrinsic mechanism.

Charge renormalization and inversion of a highly charged lipid bilayer: effects of dielectric discontinuities and charge correlations.

PubMed

Taheri-Araghi, Sattar; Ha, Bae-Yeun

2005-08-01

We reexamine the problem of charge renormalization and inversion of a highly charged surface of a low dielectric constant immersed in ionic solutions. To be specific, we consider an asymmetrically charged lipid bilayer, in which only one layer is negatively charged. In particular, we study how dielectric discontinuities and charge correlations (among lipid charges and condensed counterions) influence the effective charge of the surface. When counterions are monovalent (e.g., Na+), our mean-field approach implies that dielectric discontinuities can enhance counterion condensation. A simple scaling picture shows how the effects of dielectric discontinuities and surface-charge distributions are intertwined: Dielectric discontinuities diminish condensation if the backbone charge is uniformly smeared out while counterions are localized in space; they can, however, enhance condensation when the backbone charge is discrete. In the presence of asymmetric salts such as CaCl2 , we find that the correlation effect, treated at the Gaussian level, is more pronounced when the surface has a lower dielectric constant, inverting the sign of the charge at a smaller value of Ca2+ concentration.

Lead free dielectric ceramic with stable relative permittivity of 0.90(Na0.50Bi0.50Ti)O3-0.10AgNbO3

NASA Astrophysics Data System (ADS)

Verma, Anita; Yadav, Arun Kumar; Kumar, Sunil; Sen, Somaditya

2018-04-01

Structural, dielectric and ferroelectric properties in perovskite 0.90(Na0.50Bi0.50Ti)03-0.10AgNb03 polycrystalline powders prepared by sol-gel method are discussed. Diffuse phase transition and new type of dielectric anomaly was observed with highly steady capacitive properties in the 135-450 °C temperature range. This compound shows remarkable dielectric with dielectric constant ɛr 1000 with a variation of ± 7% and tan δ = 0.004 0.25 in 135- 450 °C temperature. In addition, it also showed excellent ferroelectric properties with saturation polarization Ps = 13.5 μC/cm2, remnant polarization of Pr = 7.6 μC/cm2 and a low coercive field Ec = 36 kV/cm at room temperature. Stable dielectric constant (ɛr) and low dielectric loss (tan δ) in a wide temperature range observed for the titled composition makes it an interesting candidate for potential use in fast growing "high-temperature electronics" industry applications.

Flexible Dielectric Nanocomposites with Ultrawide Zero-Temperature Coefficient Windows for Electrical Energy Storage and Conversion under Extreme Conditions.

PubMed

Shehzad, Khurram; Xu, Yang; Gao, Chao; Li, Hanying; Dang, Zhi-Min; Hasan, Tawfique; Luo, Jack; Duan, Xiangfeng

2017-03-01

Polymer dielectrics offer key advantages over their ceramic counterparts such as flexibility, scalability, low cost, and high breakdown voltages. However, a major drawback that limits more widespread application of polymer dielectrics is their temperature-dependent dielectric properties. Achieving dielectric constants with low/zero-temperature coefficient (L/0TC) over a broad temperature range is essential for applications in diverse technologies. Here, we report a hybrid filler strategy to produce polymer composites with an ultrawide L/0TC window of dielectric constant, as well as a significantly enhanced dielectric value, maximum energy storage density, thermal conductivity, and stability. By creating a series of percolative polymer composites, we demonstrated hybrid carbon filler based composites can exhibit a zero-temperature coefficient window of 200 °C (from -50 to 150 °C), the widest 0TC window for all polymer composite dielectrics reported to date. We further show the electric and dielectric temperature coefficient of the composites is highly stable against stretching and bending, even under AC electric field with frequency up to 1 MHz. We envision that our method will push the functional limits of polymer dielectrics for flexible electronics in extreme conditions such as in hybrid vehicles, aerospace, power electronics, and oil/gas exploration.

Theoretical study on the dimerization of Si(OH) 4 in aqueous solution and its dependence on temperature and dielectric constant

NASA Astrophysics Data System (ADS)

Tossell, J. A.

2005-01-01

Energetics for the condensation dimerization reaction of monosilicic acid: 2Si(⇒SiOH+HO have been calculated quantum mechanically, in gas-phase and aqueous solution, over a range of temperatures and dielectric constants. The calculated gas phase energy, E g, for this reaction is -6.6 kcal/mol at the very accurate composite G2 level, but the vibrational, rotational and translational contributions to the free energy in the gas-phase, ΔG VRT, sum to + 2.5 kcal/mol and the hydration free energy contribution calculated with a polarizable continuum model, ΔΔG COSMO, for a dielectric constant of 78.5, is about + 6.2 kcal/mol. Thus, the free energy change for the reaction in aqueous solution at ambient conditions is about + 2.1 kcal/mol and the equilibrium constant is ˜10 -1.5, in reasonable agreement with experiment. As T increases, ΔG VRT increases slowly. As the dielectric constant decreases (for example, under high T and P conditions in the supercritical region), ΔΔG COSMO decreases substantially. Thus, at elevated T and P, if the effective dielectric constant of the aqueous fluid is 10 or less, the reaction becomes much more favorable, consistent with recent experimental observations. The PΔV contribution to the enthalpy is also considered, but cannot be accurately determined. We have also calculated 29Si-NMR shieldings and Raman frequencies for Si(OH) 4, Si 2O 7H 6 and some other oligomeric silicates. We correctly reproduce the separation of monomer and dimer peaks observed in the 29Si-NMR spectrra at ambient T and P. The Raman spectral data are somewhat ambiguous, and the new peaks seen at high T and P could arise either from the dimer or from a 3-ring trimer, which is calculated to be highly stabilized entropically at high T.

Polyaniline coated cellulose fiber / polyvinyl alcohol composites with high dielectric permittivity and low percolation threshold

NASA Astrophysics Data System (ADS)

Anju, V. P.; Narayanankutty, Sunil K.

2016-01-01

Cost effective, high performance dielectric composites based on polyvinyl alcohol, cellulose fibers and polyaniline were prepared and the dielectric properties were studied as a function of fiber content, fiber dimensions and polyaniline content over a frequency range of 40 Hz to 30 MHz. The short cellulose fibers were size-reduced to micro and nano levels prior to coating with polyaniline. Fiber surface was coated with Polyaniline (PANI) by an in situ polymerization technique in aqueous medium. The composites were then prepared by solution casting method. Short cellulose fiber composites showed a dielectric constant (DEC) of 2.3 x 105 at 40 Hz. For the micro- and nano- cellulose fiber composites the DEC was increased to 4.5 x 105 and 1.3 x 108, respectively. To gain insight into the inflection point of the dielectric data polynomial regression analysis was carried out. The loss tangent of all the composites remained at less than 1.5. Further, AC conductivity, real and imaginary electric moduli of all the composites were evaluated. PVA nanocomposite attained an AC conductivity of 3 S/m. These showed that by controlling the size of the fiber used, it was possible to tune the permittivity and dielectric loss to desired values over a wide range. These novel nanocomposites, combining high dielectric constant and low dielectric loss, can be effectively used in applications such as high-charge storage capacitors.

Enhanced dielectric properties of Fe-substituted TiO2 nanoparticles

NASA Astrophysics Data System (ADS)

Ali, T.; Ahmed, Ateeq; Naseem siddique, M.; Tripathi, P.

2018-04-01

We report the structural and dielectric properties Ti1-xFexO2 (0.00 < x < 0.10) nanoparticles (NPs) synthesized by sol-gel method. The synthesized material has been characterized by soft X-ray absorption spectroscopy (SXAS) in order to investigate the fine structure and electronic valence state. SXAS analysis reveals that Fe-ions exist only in 3+ valance state in all the samples. The dielectric properties were studied by the use of LCR impedance spectroscopy. The dielectric constants, dielectric loss and A.C. conductivity have been determined as a function of frequency and composition of iron. At higher frequencies, the materials exhibited high AC Conductivity and low dielectric constant. The above theory could be explained by 'Maxwell Wagner Model' and may provide a new insight to fabricate nanomaterials having possible electrical application.

Optical, dielectric and morphological studies of sol-gel derived nanocrystalline TiO2 films.

PubMed

Vishwas, M; Sharma, Sudhir Kumar; Narasimha Rao, K; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

2009-10-15

Nanocrystalline TiO(2) films have been synthesized on glass and silicon substrates by sol-gel technique. The films have been characterized with optical reflectance/transmittance in the wavelength range 300-1000 nm and the optical constants (n, k) were estimated by using envelope technique as well as spectroscopic ellipsometry. Morphological studies have been carried out using atomic force microscope (AFM). Metal-Oxide-Silicon (MOS) capacitor was fabricated using conducting coating on TiO(2) film deposited on silicon. The C-V measurements show that the film annealed at 300 degrees C has a dielectric constant of 19.80. The high percentage of transmittance, low surface roughness and high dielectric constant suggests that it can be used as an efficient anti-reflection coating on silicon and other optical coating applications and also as a MOS capacitor.

Investigation of Fumed Silica/Aqueous NaCl Superdielectric Material.

PubMed

Jenkins, Natalie; Petty, Clayton; Phillips, Jonathan

2016-02-20

A constant current charge/discharge protocol which showed fumed silica filled to the point of incipient wetness with aqueous NaCl solution to have dielectric constants >10⁸ over the full range of dielectric thicknesses of 0.38-3.9 mm and discharge times of 0.25->100 s was studied, making this material another example of a superdielectric. The dielectric constant was impacted by both frequency and thickness. For time to discharge greater than 10 s the dielectric constant for all thicknesses needed to be fairly constant, always >10⁸, although trending higher with increasing thickness. At shorter discharge times the dielectric constant consistently decreased, with decreasing time to discharge. Hence, it is reasonable to suggest that for time to discharge >10 s the dielectric constant at all thicknesses will be greater than 10⁸. This in turn implies an energy density for a 5 micron thick dielectric layer in the order of 350 J/cm³ for discharge times greater than 10 s.

Investigation of Fumed Silica/Aqueous NaCl Superdielectric Material

PubMed Central

Jenkins, Natalie; Petty, Clayton; Phillips, Jonathan

2016-01-01

A constant current charge/discharge protocol which showed fumed silica filled to the point of incipient wetness with aqueous NaCl solution to have dielectric constants >108 over the full range of dielectric thicknesses of 0.38–3.9 mm and discharge times of 0.25–>100 s was studied, making this material another example of a superdielectric. The dielectric constant was impacted by both frequency and thickness. For time to discharge greater than 10 s the dielectric constant for all thicknesses needed to be fairly constant, always >109, although trending higher with increasing thickness. At shorter discharge times the dielectric constant consistently decreased, with decreasing time to discharge. Hence, it is reasonable to suggest that for time to discharge >10 s the dielectric constant at all thicknesses will be greater than 109. This in turn implies an energy density for a 5 micron thick dielectric layer in the order of 350 J/cm3 for discharge times greater than 10 s. PMID:28787918

Large change in dielectric constant of CaCu3Ti4O12 under violet laser

NASA Astrophysics Data System (ADS)

Masingboon, C.; Thongbai, P.; King, P. D. C.; Maensiri, S.; Meevasana, W.

2013-03-01

This work reports the influence of light illumination on the dielectric constant of CaCu3Ti4O12 (CCTO) polycrystals which exhibit giant dielectric constant. When the CCTO samples were exposed to 405-nm laser light, the enhancement in capacitance as high as 22% was observed for the first time, suggesting application of light-sensitive capacitance devices. To understand this change better microscopically, we also performed electronic-structure measurements using photoemission spectroscopy, and measured the electrical conductivity of the CCTO samples under different conditions of light exposure and oxygen partial pressure. All these measurements suggest that this large change is driven by oxygen vacancy induced by the irradiation.

Self-assembly and structural relaxation in a model ionomer melt

DOE PAGES

Goswami, Monojoy; Borreguero, Jose M.; Sumpter, Bobby G.

2015-02-26

Molecular dynamics simulations are used to understand the self-assembly and structural relaxation in ionomer melts containing less than 10% degree of ionization on the backbone. We study the self-assembly of charged sites and counterions that show structural ordering and agglomeration with a range of structures that can be achieved by changing the dielectric constant of the medium. The intermediate scattering function shows a decoupling of charge and counterion relaxation at longer length scales for only high dielectric constant and at shorter length scales for all dielectric constants. Finally, the slow structural decay of counterions in the strongly correlated ionomer systemmore » closely resembles transport properties of semi-flexible polymers.« less

Low temperature processing of dielectric perovskites for energy storage

NASA Astrophysics Data System (ADS)

Singh, N. B.; Schreib, Ben; Devilbiss, Michael; Loiacono, Julian; Arnold, Bradley; Choa, Fow-Sen; Mandal, K. D.

2016-05-01

Since the report of high dielectric value was published for the calcium copper titanate of the stoichiometry CaCu3Ti4O12 (CCTO), several of its analogs such as Yittrium copper titanate Y2/3Cu3Ti4O12 (YCTO), Pr2/3Cu3Ti4O12 (PCTO) and several other compounds have been studied extensively. Most of these materials have demonstrated very high dielectric constants. However, the roadblock is their low resistivity. To overcome this problem, several approaches have been considered, including doping and substitution. In order to solve this problem, we have synthesized the stoichiometric composition and used low temperature processing to grow grains of La2/3Cu3Ti4O12 (LCTO) stoichiometric compound. LCTO with excess copper oxide was also prepared to determine its effect on the morphology and dielectric constant of the stoichiometric LCTO compound. In spite of the low melting point of copper oxide, we observed that excess copper oxide did not show any faster grain growth. Also, the dielectric constant of LCTO was lower than CCTO and unlike CCTO, LCTO showed significant changes as the function of frequency. The measured resistivity was slightly higher than CCTO.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, J.; Chaudhary, S.; Majumdar, P.

We report a study on potential multiferroic characteristics of Yttrium Iron Garnet (YIG). The emergence of ferroelectricity in YIG is in debate but we provide evidence for strong magneto-electric coupling above room temperature from dielectric constant measurement with and without magnetic field. We find that the apparent pseudo-ferroelectric crossover temperature in YIG varies with frequency. For higher frequency the transition shifts towards higher temperature. This is indicative of relaxor behavior. We have also measured the dielectric constant in the presence of external magnetic field at high temperature that confirms interdependence of magnetic and dielectric properties.

Relationship between BaTiO₃ nanowire aspect ratio and the dielectric permittivity of nanocomposites.

PubMed

Tang, Haixiong; Zhou, Zhi; Sodano, Henry A

2014-04-23

The aspect ratio of barium titanate (BaTiO3) nanowires is demonstrated to be successfully controlled by adjusting the temperature of the hydrothermal growth from 150 to 240 °C, corresponding to aspect ratios from 9.3 to 45.8, respectively. Polyvinylidene fluoride (PVDF) nanocomposites are formed from the various aspect ratio nanowires and the relationship between the dielectric constant of the nanocomposite and the aspect ratio of the fillers is quantified. It was found that the dielectric constant of the nanocomposite increases with the aspect ratio of the nanowires. Nanocomposites with 30 vol % BaTiO3 nanowires and an aspect ratio of 45.8 can reach a dielectric constant of 44.3, which is 30.7% higher than samples with an aspect ratio of 9.3 and 352% larger than the polymer matrix. These results demonstrate that using high-aspect-ratio nanowires is an effective way to control and improve the dielectric performance of nanocomposites for future capacitor applications.

Role of dielectric constant in electrohydrodynamics of conducting fluids

NASA Technical Reports Server (NTRS)

Rhodes, Percy H.; Snyder, Robert S.; Roberts, Glyn O.

1992-01-01

Electrohydrodynamic (EHD) flows are driven by the interaction of an electric field with variations in electric conductivity or dielectric constant. In reported EHD experiments on the deformation of drops of immiscible dielectric fluids, the role of conductivity has tended to overshadow the role of dielectric constant. Often, large conductivity contrasts were convenient because the conductivities of the dielectric fluid were relatively uncertain. As a result, the observed effects were always qualitatively the same as if there had been no contrast in dielectric constant. Our early experiments studying the EHC deformations of cylindrical streams readily showed the conductivity effect but the dielectric constant effect was not discernible. We have modified our flow chamber and improved our method of observation and can now see an unequivocal dielectric constant effect which is in agreement with the prior theory. In this paper we first give a brief description of the physics of charge buildup at the interface of an immersed spherical drop or flowing cylindrical sample stream and then show how these charge distributions lead to interface distortions and accompanying viscous flows which constitute EHD. We next review theory and experiment describing the deformation of spherical drops. We show that in the reported drop deformation experiments, the contrast in dielectric constant was never sufficient to reverse the deformation due to the conductivity contrast. We review our work describing the deformation of a cylindrical stream of one fluid flowing in a parallel flow of another, and we compare the deformation equations with those for spherical drops. Finally, we show a definite experimental dielectric constant effect for cylindrical stream of aqueous polystyrene latex suspension. The dielectric constant varies with the frequency of the imposed electric field, and the associated EHD flow change is very apparent.

Dielectric properties of organic solvents from non-polarizable molecular dynamics simulation with electronic continuum model and density functional theory.

PubMed

Lee, Sanghun; Park, Sung Soo

2011-11-03

Dielectric constants of electrolytic organic solvents are calculated employing nonpolarizable Molecular Dynamics simulation with Electronic Continuum (MDEC) model and Density Functional Theory. The molecular polarizabilities are obtained by the B3LYP/6-311++G(d,p) level of theory to estimate high-frequency refractive indices while the densities and dipole moment fluctuations are computed using nonpolarizable MD simulations. The dielectric constants reproduced from these procedures are evaluated to provide a reliable approach for estimating the experimental data. An additional feature, two representative solvents which have similar molecular weights but are different dielectric properties, i.e., ethyl methyl carbonate and propylene carbonate, are compared using MD simulations and the distinctly different dielectric behaviors are observed at short times as well as at long times.

Dielectric properties of benzylamine in 1,2,6-hexanetriol mixture using time domain reflectometry technique

NASA Astrophysics Data System (ADS)

Swami, M. B.; Hudge, P. G.; Pawar, V. P.

The dielectric properties of binary mixtures of benzylamine-1,2,6-hexantriol mixtures at different volume fractions of 1,2,6-hexanetriol have been measured using Time Domain Reflectometry (TDR) technique in the frequency range of 10 MHz to 30 GHz. Complex permittivity spectra were fitted using Havriliak-Negami equation. By using least square fit method the dielectric parameters such as static dielectric constant (ɛ0), dielectric constant at high frequency (ɛ∞), relaxation time τ (ps) and relaxation distribution parameter (β) were extracted from complex permittivity spectra at 25∘C. The intramolecular interaction of different molecules has been discussed using the Kirkwood correlation factor, Bruggeman factor. The Kirkwood correlation factor (gf) and effective Kirkwood correlation factor (geff) indicate the dipole ordering of the binary mixtures.

Dielectric response of a nondegenerate electron gas in semiconductor nanocrystallites

NASA Astrophysics Data System (ADS)

van Faassen, E.

1998-12-01

We investigate the low-frequency dielectric response of a dilute electron gas in a small spherical semiconductor particle. The flow of the electrons is described by hydrodynamic equations which incorporate the electrostatic interactions between the electrons in a self-consistent fashion. In the low-frequency regime, the dielectric loss is small and proportional to the frequency, despite substantial field penetration into the semiconductor. The loss remains small even for high doping levels due to effective cancellation between field-induced drift and diffusion. The model is used to estimate the complex dielectric constant of a system of weakly conducting nanosized semiconductor particles. The most prominent manifestation of spatial dispersion is that photoinduced changes in the real and imaginary parts of the dielectric constant are positive and of comparable magnitude.

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO{sub 2} thin films grown by the atomic layer deposition technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kassmi, M.; LMOP, El Manar University, Tunis 2092; Pointet, J.

2016-06-28

Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO{sub 2} rutile films which are deposited on RuO{sub 2} by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz–100 kHz range, for ac electric fields up to 1 MV{sub rms}/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreasesmore » the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MV{sub rms}/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.« less

Effects of synthesis techniques on chemical composition, microstructure and dielectric properties of Mg-doped calcium titanate

NASA Astrophysics Data System (ADS)

Jongprateep, Oratai; Sato, Nicha

2018-04-01

Calcium titanate (CaTiO3) has been recognized as a material for fabrication of dielectric components, owing to its moderate dielectric constant and excellent microwave response. Enhancement of dielectric properties of the material can be achieved through doping, compositional and microstructural control. This study, therefore, aimed at investigating effects of powder synthesis techniques on compositions, microstructure, and dielectric properties of Mg-doped CaTiO3. Solution combustion and solid-state reaction were powder synthesis techniques employed in preparation of undoped CaTiO3 and CaTiO3 doped with 5-20 at% Mg. Compositional analysis revealed that powder synthesis techniques did not exhibit a significant effect on formation of secondary phases. When Mg concentration did not exceed 5 at%, the powders prepared by both techniques contained only a single phase. An increase of MgO secondary phase was observed as Mg concentrations increased from 10 to 20 at%. Experimental results, on the contrary, revealed that powder synthesis techniques contributed to significant differences in microstructure. Solution combustion technique produced powders with finer particle sizes, which consequently led to finer grain sizes and density enhancement. High-density specimens with fine microstructure generally exhibit improved dielectric properties. Dielectric measurements revealed that dielectric constants of all samples ranged between 231 and 327 at 1 MHz, and that superior dielectric constants were observed in samples prepared by the solution combustion technique.

Study of dielectric phenomenon for P3HT: PCBM blend

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Kumar, Manoj; Rathi, Sonika; Singh, Amarjeet

2017-05-01

In this present work we prepared the film sample of blend (P3HT (poly (3-hexylthiophene-2, 5-diyl)): PCBM ([6,6]-phenyl C61-butyric acid methyl ester)), P3HT and PCBM solution on ITO substrate by drop cast method. Capacitance and tangent loss (tan δ) were measured and dielectric constants έ and dielectric loss ɛ″ were deduced from them as function frequency at room temperature. Blend samples show strong frequency dependence as compared to pristine P3HT and pristine PCBM sample. The high dielectric constant in blend films at low frequency was attributed to characteristic slow relaxation process in polymers along with polarization of isolated grains in the blend sample.

Capacitive Cells for Dielectric Constant Measurement

ERIC Educational Resources Information Center

Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco

2015-01-01

A simple capacitive cell for dielectric constant measurement in liquids is presented. As an illustrative application, the cell is used for measuring the degradation of overheated edible oil through the evaluation of their dielectric constant.

High Pressure Experimental Studies on CuO: Indication of Re-entrant Multiferroicity at Room Temperature

PubMed Central

Jana, Rajesh; Saha, Pinku; Pareek, Vivek; Basu, Abhisek; Kapri, Sutanu; Bhattacharyya, Sayan; Mukherjee, Goutam Dev

2016-01-01

We have carried out detailed experimental investigations on polycrystalline CuO using dielectric constant, dc resistance, Raman spectroscopy and X-ray diffraction measurements at high pressures. Observation of anomalous changes both in dielectric constant and dielectric loss in the pressure range 3.7–4.4 GPa and reversal of piezoelectric current with reversal of poling field direction indicate to a change in ferroelectric order in CuO at high pressures. A sudden jump in Raman integrated intensity of Ag mode at 3.4 GPa and observation of Curie-Weiss type behaviour in dielectric constant below 3.7 GPa lends credibility to above ferroelectric transition. A slope change in the linear behaviour of the Ag mode and a minimum in the FWHM of the same indicate indirectly to a change in magnetic ordering. Since all the previous studies show a strong spin-lattice interaction in CuO, observed change in ferroic behaviour at high pressures can be related to a reentrant multiferroic ordering in the range 3.4 to 4.4 GPa, much earlier than predicted by theoretical studies. We argue that enhancement of spin frustration due to anisotropic compression that leads to change in internal lattice strain brings the multiferroic ordering to room temperature at high pressures. PMID:27530329

High performance YBCO films. Report for 1 August-31 October 1992

DOE Office of Scientific and Technical Information (OSTI.GOV)

Denlinger, E.J.; Fathy, A.; Kalokitis, D.

1992-10-31

The objective of this program is to identify suitable low loss, low dielectric constant substrates and develop and optimize deposition processes for high quality YBCO films including the necessary buffer layers. Ultimate goals are large area substrates having double-sided HTS coating with a surface resistance ten times lower than copper at 40 GHz. High quality HTS films on low dielectric constant substrates are expected to find widespread use in advanced millimeter wave components, in extending the power handling capability of microwave and millimeter wave circuitry, and in facilitating high speed computer interconnects. Sample demonstration circuits will be built toward themore » end of the program. We have successfully deposited a high quality YBCO film on a good low loss and low dielectric constant substrate, magnesium fluoride (e=5). With the use of two buffer layers (magnesium oxide and strontium titanate) between the YBCO and the substrate, transition temperatures of 89 deg K and transition widths of about 0.5 deg K were achieved. The critical current density Jc of 4 x 10 6 A/cm2 at 77K in zero field is among the highest reported for YBCO films. The magnesium fluoride (MgF2) substrate has a tetragonal structure with a dielectric constant of 5.2 in the plane of the substrate and 4.6 perpendicular to the substrate surface. It has a good harness (-575 Knoop) and a linear thermal expansion coefficient that closely matches YBCO and the buffer layers.« less

Sensor and Methodology for Dielectric Analysis of Vegetal Oils Submitted to Thermal Stress

PubMed Central

Stevan, Sergio Luiz; Paiter, Leandro; Ricardo Galvão, José; Vieira Roque, Daniely; Sidinei Chaves, Eduardo

2015-01-01

Vegetable oils used in frying food represent a social problem as its destination. The residual oil can be recycled and returned to the production line, as biodiesel, as soap, or as putty. The state of the residual oil is determined according to their physicochemical characteristics whose values define its economically viable destination. However, the physicochemical analysis requires high costs, time and general cost of transporting. This study presents the use of a capacitive sensor and a quick and inexpensive method to correlate the physicochemical variables to the dielectric constant of the material undergoing oil samples to thermal cycling. The proposed method allows reducing costs in the characterization of residual oil and the reduction in analysis time. In addition, the method allows an assessment of the quality of the vegetable oil during use. The experimental results show the increasing of the dielectric constant with the temperature, which facilitates measurement and classification of the dielectric constant at considerably higher temperatures. The results also confirm a definitive degradation in used oil and a correlation between the dielectric constant of the sample with the results of the physicochemical analysis (iodine value, acid value, viscosity and refractive index). PMID:26501293

Sensor and methodology for dielectric analysis of vegetal oils submitted to thermal stress.

PubMed

Stevan, Sergio Luiz; Paiter, Leandro; Galvão, José Ricardo; Roque, Daniely Vieira; Chaves, Eduardo Sidinei

2015-10-16

Vegetable oils used in frying food represent a social problem as its destination. The residual oil can be recycled and returned to the production line, as biodiesel, as soap, or as putty. The state of the residual oil is determined according to their physicochemical characteristics whose values define its economically viable destination. However, the physicochemical analysis requires high costs, time and general cost of transporting. This study presents the use of a capacitive sensor and a quick and inexpensive method to correlate the physicochemical variables to the dielectric constant of the material undergoing oil samples to thermal cycling. The proposed method allows reducing costs in the characterization of residual oil and the reduction in analysis time. In addition, the method allows an assessment of the quality of the vegetable oil during use. The experimental results show the increasing of the dielectric constant with the temperature, which facilitates measurement and classification of the dielectric constant at considerably higher temperatures. The results also confirm a definitive degradation in used oil and a correlation between the dielectric constant of the sample with the results of the physicochemical analysis (iodine value, acid value, viscosity and refractive index).

Enhanced dielectric and electrical properties of annealed PVDF thin film

NASA Astrophysics Data System (ADS)

Arshad, A. N.; Rozana, M. D.; Wahid, M. H. M.; Mahmood, M. K. A.; Sarip, M. N.; Habibah, Z.; Rusop, M.

2018-05-01

Poly (vinylideneflouride) (PVDF) thin films were annealed at various annealing temperatures ranging from 70°C to 170°C. This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in comparison to un-annealed PVDF (UN-PVDF), dielectric constant (10) at the same measured frequency. As the annealing temperature was increased from 90°C (AN90) to 150°C (AN150), the dielectric constant value of PVDF thin films was observed to decrease gradually to 11. AN70 also revealed low tangent loss (tan δ) value at similar frequency. With respect to its resistivity properties, the values were found to increase from 1.98×104 Ω.cm to 3.24×104 Ω.cm for AN70 and UN-PVDF films respectively. The improved in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C is the favorable annealing temperature for PVDF thin films. Hence, AN70 is a promising film to be utilized for application in electronic devices such as low frequency capacitor.

The Electrical Properties for Phenolic Isocyanate-Modified Bisphenol-Based Epoxy Resins Comprising Benzoate Group.

PubMed

Lee, Eun Yong; Chae, Il Seok; Park, Dongkyung; Suh, Hongsuk; Kang, Sang Wook

2016-03-01

Epoxy resin has been required to have a low dielectric constant (D(k)), low dissipation factor (Df), low coefficient of thermal expansion (CTE), low water absorption, high mechanical, and high adhesion properties for various applications. A series of novel phenolic isocyanate-modified bisphenol-based epoxy resins comprising benzoate group were prepared for practical electronic packaging applications. The developed epoxy resins showed highly reduced dielectric constants (D(k)-3.00 at 1 GHz) and low dissipation values (Df-0.014 at 1 GHz) as well as enhanced thermal properties.

Microstructure and dielectric properties of silver-barium titanate nanocomplex materials by wet chemical approach

NASA Astrophysics Data System (ADS)

Ueno, Shintaro; Sakamoto, Yasunao; Nakashima, Kouichi; Wada, Satoshi

2014-09-01

To develop ceramic capacitors with a high effective dielectric constant, we attempted to fabricate BaTiO3 (BT) complexes with embedded Ag nanoparticles by wet chemical processes. Ag nanoparticle-adsorbed dendritic BT particles, Ag-BT hybrid particles, were synthesized from the sol-gel-derived precursor gel powders containing Ag, Ba, and Ti by hydrothermal treatment. These particles were pressed with BT fillers and TiO2 precursor nanoparticles into green compacts, and then, the green compacts were chemically converted into the Ag/BT nanocomplex compacts in Ba(OH)2 aqueous solution under the hydrothermal condition at 160 °C. The effective dielectric constant of the resultant Ag/BT nanocomplexes increases with an increase in Ag content. The maximal effective dielectric constant of approximately 900 was recorded for the nanocomplex with the Ag content of 10.7 vol %.

Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator

NASA Astrophysics Data System (ADS)

Takahashi, Takanori; Oikawa, Kento; Hoga, Takeshi; Uraoka, Yukiharu; Uchiyama, Kiyoshi

2017-10-01

In this paper, we describe a method of fabrication of thin film transistors (TFTs) with high dielectric constant (high-k) gate insulator by a solution deposition. We chose a solution processed SrZrO3 as a gate insulator material, which possesses a high dielectric constant of 21 with smooth surface. The IGZO-TFT with solution processed SrZrO3 showed good switching property and enough saturation features, i.e. field effect mobility of 1.7cm2/Vs, threshold voltage of 4.8V, sub-threshold swing of 147mV/decade, and on/off ratio of 2.3×107. Comparing to the TFTs with conventional SiO2 gate insulator, the sub-threshold swing was improved by smooth surface and high field effect due to the high dielectric constant of SrZrO3. These results clearly showed that use of solution processed high-k SrZrO3 gate insulator could improve sub-threshold swing. In addition, the residual carbon originated from organic precursors makes TFT performances degraded.

Can the Dielectric Constant of Fullerene Derivatives Be Enhanced by Side-Chain Manipulation? A Predictive First-Principles Computational Study.

PubMed

Sami, Selim; Haase, Pi A B; Alessandri, Riccardo; Broer, Ria; Havenith, Remco W A

2018-04-19

The low efficiency of organic photovoltaic (OPV) devices has often been attributed to the strong Coulombic interactions between the electron and hole, impeding the charge separation process. Recently, it has been argued that by increasing the dielectric constant of materials used in OPVs, this strong interaction could be screened. In this work, we report the application of periodic density functional theory together with the coupled perturbed Kohn-Sham method to calculate the electronic contribution to the dielectric constant for fullerene C 60 derivatives, a ubiquitous class of molecules in the field of OPVs. The results show good agreement with experimental data when available and also reveal an important undesirable outcome when manipulating the side chain to maximize the static dielectric constant: in all cases, the electronic contribution to the dielectric constant decreases as the side chain increases in size. This information should encourage both theoreticians and experimentalists to further investigate the relevance of contributions to the dielectric constant from slower processes like vibrations and dipolar reorientations for facilitating the charge separation, because electronically, enlarging the side chain of conventional fullerene derivatives only lowers the dielectric constant, and consequently, their electronic dielectric constant is upper bound by the one of C 60 .

Can the Dielectric Constant of Fullerene Derivatives Be Enhanced by Side-Chain Manipulation? A Predictive First-Principles Computational Study

PubMed Central

2018-01-01

The low efficiency of organic photovoltaic (OPV) devices has often been attributed to the strong Coulombic interactions between the electron and hole, impeding the charge separation process. Recently, it has been argued that by increasing the dielectric constant of materials used in OPVs, this strong interaction could be screened. In this work, we report the application of periodic density functional theory together with the coupled perturbed Kohn–Sham method to calculate the electronic contribution to the dielectric constant for fullerene C60 derivatives, a ubiquitous class of molecules in the field of OPVs. The results show good agreement with experimental data when available and also reveal an important undesirable outcome when manipulating the side chain to maximize the static dielectric constant: in all cases, the electronic contribution to the dielectric constant decreases as the side chain increases in size. This information should encourage both theoreticians and experimentalists to further investigate the relevance of contributions to the dielectric constant from slower processes like vibrations and dipolar reorientations for facilitating the charge separation, because electronically, enlarging the side chain of conventional fullerene derivatives only lowers the dielectric constant, and consequently, their electronic dielectric constant is upper bound by the one of C60. PMID:29561616

Organic/Inorganic Nano-hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications

NASA Astrophysics Data System (ADS)

Yu, Yang-Yen; Jiang, Ai-Hua; Lee, Wen-Ya

2016-11-01

The organic material soluble polyimide (PI) and organic-inorganic hybrid PI-barium titanate (BaTiO3) nanoparticle dielectric materials (IBX, where X is the concentration of BaTiO3 nanoparticles in a PI matrix) were successfully synthesized through a sol-gel process. The effects of various BaTiO3 contents on the hybrid film performance and performance optimization were investigated. Furthermore, pentacene-based organic thin film transistors (OTFTs) with PI-BaTiO3/polymethylmethacrylate or cyclic olefin copolymer (COC)-modified gate dielectrics were fabricated and examined. The hybrid materials showed effective dispersion of BaTiO3 nanoparticles in the PI matrix and favorable thermal properties. X-ray diffraction patterns revealed that the BaTiO3 nanoparticles had a perovskite structure. The hybrid films exhibited high formability and planarity. The IBX hybrid dielectric films exhibited tunable insulating properties such as the dielectric constant value and capacitance in ranges of 4.0-8.6 and 9.2-17.5 nF cm-2, respectively. Adding the modified layer caused the decrease of dielectric constant values and capacitances. The modified dielectric layer without cross-linking displayed a hydrophobic surface. The electrical characteristics of the pentacene-based OTFTs were enhanced after the surface modification. The optimal condition for the dielectric layer was 10 wt% hybrid film with the COC-modified layer; moreover, the device exhibited a threshold voltage of 0.12 V, field-effect mobility of 4.32 × 10-1 cm2 V-1 s-1, and on/off current of 8.4 × 107.

High-throughput screening of inorganic compounds for the discovery of novel dielectric and optical materials

DOE PAGES

Petousis, Ioannis; Mrdjenovich, David; Ballouz, Eric; ...

2017-01-31

Dielectrics are an important class of materials that are ubiquitous in modern electronic applications. Even though their properties are important for the performance of devices, the number of compounds with known dielectric constant is on the order of a few hundred. Here, we use Density Functional Perturbation Theory as a way to screen for the dielectric constant and refractive index of materials in a fast and computationally efficient way. Our results constitute the largest dielectric tensors database to date, containing 1,056 compounds. Details regarding the computational methodology and technical validation are presented along with the format of our publicly availablemore » data. In addition, we integrate our dataset with the Materials Project allowing users easy access to material properties. Finally, we explain how our dataset and calculation methodology can be used in the search for novel dielectric compounds.« less

High-throughput screening of inorganic compounds for the discovery of novel dielectric and optical materials

PubMed Central

Petousis, Ioannis; Mrdjenovich, David; Ballouz, Eric; Liu, Miao; Winston, Donald; Chen, Wei; Graf, Tanja; Schladt, Thomas D.; Persson, Kristin A.; Prinz, Fritz B.

2017-01-01

Dielectrics are an important class of materials that are ubiquitous in modern electronic applications. Even though their properties are important for the performance of devices, the number of compounds with known dielectric constant is on the order of a few hundred. Here, we use Density Functional Perturbation Theory as a way to screen for the dielectric constant and refractive index of materials in a fast and computationally efficient way. Our results constitute the largest dielectric tensors database to date, containing 1,056 compounds. Details regarding the computational methodology and technical validation are presented along with the format of our publicly available data. In addition, we integrate our dataset with the Materials Project allowing users easy access to material properties. Finally, we explain how our dataset and calculation methodology can be used in the search for novel dielectric compounds. PMID:28140408

High-throughput screening of inorganic compounds for the discovery of novel dielectric and optical materials.

PubMed

Petousis, Ioannis; Mrdjenovich, David; Ballouz, Eric; Liu, Miao; Winston, Donald; Chen, Wei; Graf, Tanja; Schladt, Thomas D; Persson, Kristin A; Prinz, Fritz B

2017-01-31

Dielectrics are an important class of materials that are ubiquitous in modern electronic applications. Even though their properties are important for the performance of devices, the number of compounds with known dielectric constant is on the order of a few hundred. Here, we use Density Functional Perturbation Theory as a way to screen for the dielectric constant and refractive index of materials in a fast and computationally efficient way. Our results constitute the largest dielectric tensors database to date, containing 1,056 compounds. Details regarding the computational methodology and technical validation are presented along with the format of our publicly available data. In addition, we integrate our dataset with the Materials Project allowing users easy access to material properties. Finally, we explain how our dataset and calculation methodology can be used in the search for novel dielectric compounds.

Photoinduced Giant Dielectric Constant in Lead Halide Perovskite Solar Cells.

PubMed

Juarez-Perez, Emilio J; Sanchez, Rafael S; Badia, Laura; Garcia-Belmonte, Germá; Kang, Yong Soo; Mora-Sero, Ivan; Bisquert, Juan

2014-07-03

Organic-inorganic lead trihalide perovskites have emerged as an outstanding photovoltaic material that demonstrated a high 17.9% conversion efficiency of sunlight to electricity in a short time. We have found a giant dielectric constant (GDC) phenomenon in these materials consisting on a low frequency dielectric constant in the dark of the order of ε0 = 1000. We also found an unprecedented behavior in which ε0 further increases under illumination or by charge injection at applied bias. We observe that ε0 increases nearly linearly with the illumination intensity up to an additional factor 1000 under 1 sun. Measurement of a variety of samples of different morphologies, compositions, and different types of contacts shows that the GDC is an intrinsic property of MAPbX3 (MA = CH3NH3(+)). We hypothesize that the large dielectric response is induced by structural fluctuations. Photoinduced carriers modify the local unit cell equilibrium and change the polarizability, assisted by the freedom of rotation of MA. The study opens a way for the understanding of a key aspect of the photovoltaic operation of high efficiency perovskite solar cells.

Time and voltage dependences of nanoscale dielectric constant modulation on indium tin oxide films

NASA Astrophysics Data System (ADS)

Li, Liang; Hao, Haoyue; Zhao, Hua

2017-01-01

The modulation of indium tin oxide (ITO) films through surface charge accumulation plays an important role in many different applications. In order to elaborately study the modulation, we measured the dielectric constant of the modulated layer through examining the excitation of surface plasmon polaritons. Charges were pumped on the surfaces of ITO films through applying high voltage in appropriate directions. Experiments unveiled that the dielectric constant of the modulated layer had large variation along with the nanoscale charge accumulation. Corresponding numerical results were worked out through combining Drude model and Mayadas-Shatzkes model. Based on the above results, we deduced the time and voltage dependences of accumulated charge density, which revealed a long-time charge accumulation process.

Microscopic theoretical study of frequency dependent dielectric constant of heavy fermion systems

NASA Astrophysics Data System (ADS)

Shadangi, Keshab Chandra; Rout, G. C.

2017-05-01

The dielectric polarization and the dielectric constant plays a vital role in the deciding the properties of the Heavy Fermion Systems. In the present communication we consider the periodic Anderson's Model which consists of conduction electron kinetic energy, localized f-electron kinetic energy and the hybridization between the conduction and localized electrons, besides the Coulomb correlation energy. We calculate dielectric polarization which involves two particle Green's functions which are calculated by using Zubarev's Green's function technique. Using the equations of motion of the fermion electron operators. Finally, the temperature and frequency dependent dielectric constant is calculated from the dielectric polarization function. The charge susceptibility and dielectric constant are computed numerically for different physical parameters like the position (Ef) of the f-electron level with respect to fermi level, the strength of the hybridization (V) between the conduction and localized f-electrons, Coulomb correlation potential temperature and optical phonon wave vector (q). The results will be discussed in a reference to the experimental observations of the dielectric constants.

Nanoindentation investigation of HfO2 and Al2O3 films grown by atomic layer deposition

Treesearch

K. Tapily; Joseph E. Jakes; D. S. Stone; P. Shrestha; D. Gu; H. Baumgart; A. A. Elmustafa

2008-01-01

The challenges of reducing gate leakage current and dielectric breakdown beyond the 45 nm technology node have shifted engineers’ attention from the traditional and proven dielectric SiO2 to materials of higher dielectric constant also known as high-k materials such as hafnium oxide (HfO2) and aluminum oxide (Al2O3). These high-k materials are projected to...

Examination of Effective Dielectric Constants Derived from Non-Spherical Melting Hydrometeor

NASA Astrophysics Data System (ADS)

Liao, L.; Meneghini, R.

2009-04-01

The bright band, a layer of enhanced radar echo associated with melting hydrometeors, is often observed in stratiform rain. Understanding the microphysical properties of melting hydrometeors and their scattering and propagation effects is of great importance in accurately estimating parameters of the precipitation from spaceborne radar and radiometers. However, one of the impediments in the study of the radar signature of the melting layer is the determination of effective dielectric constants of melting hydrometeors. Although a number of mixing formulas are available to compute the effective dielectric constants, their results vary to a great extent when water is a component of the mixture, such as in the case of melting snow. It is also physically unclear as to how to select among these various formulas. Furthermore, the question remains as to whether these mixing formulas can be applied to computations of radar polarimetric parameters from non-spherical melting particles. Recently, several approaches using numerical methods have been developed to derive the effective dielectric constants of melting hydrometeors, i.e., mixtures consisting of air, ice and water, based on more realistic melting models of particles, in which the composition of the melting hydrometeor is divided into a number of identical cells. Each of these cells is then assigned in a probabilistic way to be water, ice or air according to the distribution of fractional water contents for a particular particle. While the derived effective dielectric constants have been extensively tested at various wavelengths over a range of particle sizes, these numerical experiments have been restricted to the co-polarized scattering parameters from spherical particles. As polarimetric radar has been increasingly used in the study of microphysical properties of hydrometeors, an extension of the theory to polarimetric variables should provide additional information on melting processes. To account for polarimetric radar measurements from melting hydrometeors, it is necessary to move away from the restriction that the melting particles are spherical. In this study, our primary focus is on the derivation of the effective dielectric constants of non-spherical particles that are mixtures of ice and water. The computational model for the ice-water particle is described by a collection of 128x128x128 cubic cells of identical size. Because of the use of such a high-resolution model, the particles can be described accurately not only with regard to shape but with respect to structure as well. The Cartesian components of the mean internal electric field of particles, which are used to infer the effective dielectric constants, are calculated at each cell by the use of the Conjugate Gradient-Fast Fourier Transform (CG-FFT) numerical method. In this work we first check the validity of derived effective dielectric constant from a non-spherical mixed phase particle by comparing the polarimetric scattering parameters of an ice-water spheroid obtained from the CGFFT to those computed from the T-matrix for a homogeneous particle with the same geometry as that of the mixed phase particle (such as size, shape and orientation) and with an effective dielectric constant derived from the internal field of the mixed-phase particle. The accuracy of the effective dielectric constant can be judged by whether the scattering parameters of interest can accurately reproduce those of the exact solution, i.e., the T-matrix results. The purpose of defining an effective dielectric constant is to reduce the complexity of the scattering calculations in the sense that the effective dielectric constant, once obtained, may be applicable to a range of particle sizes, shapes and orientations. Conversely, if a different effective dielectric constant is needed for each particle size or shape, then its utility would be marginal. Having verified that the effective dielectric constant defined for a particular particle with a fixed shape, size, and orientation is valid, a check is performed to see if this effective dielectric constant can be used to characterize a class of particle types (with arbitrary sizes, shapes and orientations) if the fractional ice-water contents of melting particles remain the same. Among the scattering and polarimatric parameters used for examination of effective dielectric constant in this study, are the radar backscattering, extinction and scattering coefficients, asymmetry factor, differential reflectivity factor (ZDR), phase shift and linear polarization ratio (LDR). The goal is to determine whether the effective dielectric constant approach provides a means to compute accurately the radar polarimetric scattering parameters and radiometer brightness temperature quantities from the melting layer in a relatively simple and efficient way.

Aromatic Polythiourea Dielectrics with High Energy Density, High Breakdown Strength, and Low Dielectric Loss

NASA Astrophysics Data System (ADS)

Wu, Shan; Burlingame, Quinn; Lin, Minren; Zhang, Qiming

2013-03-01

There is an increasing demand on dielectric materials with high electric energy density and low loss for a broad range of applications in modern electronics and electrical power systems such as hybrid electric vehicles (HEV), medical defibrillators, filters, and switched-mode power supplies. One major challenge in developing dielectric polymers is how to achieve high energy density Ue while maintaining low dielectric loss, even at very high-applied electric fields. Here we show that amorphous polar-polymers with very low impurity concentration can be promising for realizing such a dielectric polymer. Polar-polymer with high dipole moment and weak dipole coupling can provide relatively high dielectric constant for high Ue, eliminate polarization and conduction losses due to weak dipolar coupling and strong polar-scattering to charge carriers. Indeed, an aromatic polythiourea thin film can maintain low loss to high fields (>1 GV/m) with a high Ue (~ 24 J/cm3) , which is very attractive for energy storage capacitors.

ZrO2 Layer Thickness Dependent Electrical and Dielectric Properties of BST/ZrO2/BST Multilayer Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahoo, S. K.; Misra, D.; Agrawal, D. C.

2011-01-01

Recently, high K materials play an important role in microelectronic devices such as capacitors, memory devices, and microwave devices. Now a days ferroelectric barium strontium titanate [Ba{sub x}Sr{sub 1-x}TiO{sub 3}, (BST)] thin film is being actively investigated for applications in dynamic random access memories (DRAM), field effect transistor (FET), and tunable devices because of its properties such as high dielectric constant, low leakage current, low dielectric loss, and high dielectric breakdown strength. Several approaches have been used to optimize the dielectric and electrical properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found thatmore » inserting a ZrO{sub 2} layer in between two BST layers results in a significant reduction in dielectric constant, loss tangent, and leakage current in the multilayer thin films. Also it is shown that the properties of multilayer structure are found to depend strongly on the sublayer thicknesses. In this work the effect of ZrO{sub 2} layer thickness on the dielectric, ferroelectric as well as electrical properties of BST/ZrO{sub 2}/BST multilayer structure is studied. The multilayer Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3}/ZrO{sub 2}/Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} film is deposited by a sol-gel process on the platinized Si substrate. The thickness of the middle ZrO{sub 2} layer is varied while keeping the top and bottom BST layer thickness as fixed. It is observed that the dielectric constant, dielectric loss tangent, and leakage current of the multilayer films reduce with the increase of ZrO{sub 2} layer thickness and hence suitable for memory device applications. The ferroelectric properties of the multilayer film also decrease with the ZrO{sub 2} layer thickness.« less

Enhanced ferromagnetic properties and high temperature dielectric anomalies in Bi{sub 0.9}Ca{sub 0.05}Sm{sub 0.05}FeO{sub 3} prepared by hydrothermal method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bharathi, K. Kamala, E-mail: kkamalabharathi@gmail.com; Ramesh, G.; Patro, L.N.

2015-02-15

Graphical abstract: Temperature variation of dielectric constant of Bi{sub 0.9}Ca{sub 0.05}Sm{sub 0.05}FeO{sub 3} at various frequencies as a function of temperature indicating anomalies at 420 and 540 K. - Highlights: • Substitution of Sm ions for Bi enhances the saturation magnetization of BiFeO{sub 3}. • XPS studies indicate the creation of oxygen vacancies upon Ca substitution. • Dielectric measurements show dielectric anomalies at high temperatures. • Raman spectra at high temperatures confirm the dielectric anomaly temperatures. - Abstract: Enhanced ferromagnetic properties and high temperature dielectric anomalies in the temperature range of 300–873 K in Bi{sub 0.9}Ca{sub 0.05}Sm{sub 0.05}FeO{sub 3} (BCSFO)more » prepared by hydrothermal method are reported. BiFeO{sub 3} is seen to crystallize in rhombohedrally distorted perovskite structure without any impurity phase. Substitution of small amount of Ca and Sm (Bi{sub 0.9}Ca{sub 0.05}Sm{sub 0.05}FeO{sub 3}) leads to increase in the lattice constant values and formation of small amount of secondary phase. Magnetization curve of pure BFO indicates very weak ferromagnetism combined with antiferromagnetic nature of the samples. Whereas, BCSFO sample shows very clear and enhanced ferromagnetic nature. Saturation magnetization and Neel’s temperature values are found to be 4.36 emu/g and 664 K, respectively. X-ray photoelectron spectroscopy indicates the creation of oxygen vacancies upon Ca substitution in Bi site. Dielectric anomalies at 420 and 540 K were observed for Bi{sub 0.9}Ca{sub 0.05}Sm{sub 0.05}FeO{sub 3} from the temperature variation of dielectric constant and specific heat capacity measurements. Observation of dielectric anomalies in pure BiFeO{sub 3} sample reveals that the origin of dielectric peaks is purely from the primary phase. Raman spectroscopy study indicates a clear shift and broadening of A modes (between 100 and 200 cm{sup −1}) at the dielectric anomaly temperatures supporting the observed dielectric anomalies.« less

Structural, dielectric and ferroelectric studies of (x) Mg0.25Cu0.25Zn0.5Fe2O4 + (1-x) BaTiO3 magnetoelectric nano-composites

NASA Astrophysics Data System (ADS)

Khader, S. Abdul; Muneeswaran, M.; Giridharan, N. V.; Sankarappa, T.

2016-05-01

The Particulate nano-composites of ferrite and ferroelectric phases having the general formula (x) Mg0.25Cu0.25Zn0.5Fe2O4 + (1-x) BaTiO3 (x=15%, 30% and 45%) were synthesized by sintering mixtures of highly ferroelectric BaTiO3 (BT) and highly magneto-strictive magnetic component Mg0.25Cu0.25Zn0.5Fe2O4(MCZF). The presence of constituent phases of ferrite, ferroelectric and their composites were probed and confirmed by X-ray diffraction (XRD) studies. Surface morphology of the samples has been investigated using Field Emission Scanning Electron Microscope (FESEM). The variation of dielectric constant and dissipation factor as a function of frequency from 100 Hz to 1 MHz at room temperature were carried out using a Hioki LCR Hi-Tester. The dielectric constant and dielectric loss were found to decrease rapidly in the low frequency region and became almost constant in the high frequency region. The electrical conductivity deduced from the measured dielectric data has been thoroughly analyzed and found that the conduction mechanism in these composites is in conformity with small polaron hopping model. The ferroelectric properties of synthesized magneto-electric nano-composites were measured using P-E loop tracer.

Analysis of Blockade in Charge Transport Across Polymeric Heterojunctions as a Function of Thermal Annealing: A Different Perspective

NASA Astrophysics Data System (ADS)

Rathi, Sonika; Chauhan, Gayatri; Gupta, Saral K.; Srivastava, Ritu; Singh, Amarjeet

2017-02-01

A blend of poly(3-hexylthiophene-2,5diyl) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) is popularly used as an active medium in polymeric solar devices. According to the most recent understanding, the blend is a three-phase system contrary to its earlier understanding of two-phase bicontinuous network. We have synthesized a P3HT-PCBM based layered heterostructure system by spin coating and thermal vacuum evaporations. Current density ( J) was measured as a function of applied electric field ( E) across the system bound between two metal electrodes. J- E relations were analyzed into the backdrop of space charge limited current model and Schottky model. The later was used to predict dc-dielectric constants from the linear slopes of ln ( J) versus E 1/2. The curves were not monotonously linear, but observe a knee-bend separating into two linear segments for each curve. Thermal annealing from 40°C to 80°C was used as an activation tool for driving changes in the internal morphology via inter-diffusion of polymers and current measurements were performed at room temperature after each annealing. At the last stage of annealing the two linear slopes were highly distinct. The presence of sharp knee-bend results in approximately 20 times jump in dielectric constant as a function of electric field. Such high jumps in dielectric constant illustrate the potential for switching applications and charge storage. The high dielectric constants can be understood in terms of space charge polarization due to isolated domains which hindrance to charge transport. The high dielectric constants were confirmed by another experiment of capacitance measurements of a different set of similar samples. A study of thermal evolution of internal morphology was also carried out using x-ray diffraction and scanning electron microscopy techniques to correlate the morphological changes with the transport properties.

An equivalent method of mixed dielectric constant in passive microwave/millimeter radiometric measurement

NASA Astrophysics Data System (ADS)

Su, Jinlong; Tian, Yan; Hu, Fei; Gui, Liangqi; Cheng, Yayun; Peng, Xiaohui

2017-10-01

Dielectric constant is an important role to describe the properties of matter. This paper proposes This paper proposes the concept of mixed dielectric constant(MDC) in passive microwave radiometric measurement. In addition, a MDC inversion method is come up, Ratio of Angle-Polarization Difference(RAPD) is utilized in this method. The MDC of several materials are investigated using RAPD. Brightness temperatures(TBs) which calculated by MDC and original dielectric constant are compared. Random errors are added to the simulation to test the robustness of the algorithm. Keywords: Passive detection, microwave/millimeter, radiometric measurement, ratio of angle-polarization difference (RAPD), mixed dielectric constant (MDC), brightness temperatures, remote sensing, target recognition.

Highly reliable spin-coated titanium dioxide dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mondal, Sandip, E-mail: sandipmondal@physics.iisc.ernet.in; Kumar, Arvind; Rao, K. S. R. Koteswara

Dielectric degradation as low as 0.3 % has been observed for a highly reliable Titanium dioxide (TiO{sub 2}) film after constant voltage stressing (CVS) with – 4 V for 10{sup 5} second at room temperature (300 K). The film was fabricated by sol –gel spin – coating method on a lightly doped p-Si (~10{sup 15} cm{sup −3}) substrate. The equivalent oxide thickness (EOT) is 7 nm with a dielectric constant 33 (at 1 MHz). Metal – Oxide – Semiconductor (MOS) capacitors have been fabricated with an optimum annealing temperature of 800°C for one hour in a preheated furnace. The dielectricmore » degradation is annealing temperature dependent. A degradation of 1.4 %, 1.2 % and 1.1 % has been observed for 400°C, 600°C and 1000°C temperature annealed MOS respectively. The dielectric degradation increases below or above the optimum temperature of annealing.« less

Dielectric and acoustical high frequency characterisation of PZT thin films

NASA Astrophysics Data System (ADS)

Conde, Janine; Muralt, Paul

2010-02-01

Pb(Zr, Ti)O3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

Effect of surfactant and mineralizer on the dielectric properties of zirconia nanocrsytals

NASA Astrophysics Data System (ADS)

Maheswari, A. Uma; Mohan, Sreedevi R.; Sivakumar, M.

2018-01-01

The combined effect of surfactants (PVP/CTAB) and alkaline mineralizers (NaOH/NH4OH) on dielectric properties of zirconia nanocrystals is analyzed. It is found that, the stabilization of zirconia tetramers by surfactants and the rate of hydroxyl ions released by alkaline mineralizers have significant impact on the dielectric properties of nanocrystals. The PVP capped tetramers form highly conducting grains with insulating boundaries, whereas the grains of CTAB capped tetramers are highly insulating with conducting grain boundaries, as revealed by Nyquist plots. Consequently, the space charge polarization would be quite large in highly conducting grains resulting in higher dielectric constant values at lower frequencies. The higher dielectric constant of PVP capped nanocrystals is due to greater tetragonal coordination of 3d5/2 and 3d3/2 electrons of Zr4+ ions than that of CTAB capped nanocrystals. Further, the surface oxygen vacancies of PVP samples are higher, resulting in a high space charge polarization. The ESR signal corresponding to F+ centers appears stronger for PVP/NH4OH nanocrystals. Moreover, the larger ESR line width of PVP/NH4OH nanocrystals corresponding to more oxygen vacancies is in accordance with the inference attained from the XPS analysis.

Effects of BOX engineering on analogue/RF and circuit performance of InGaAs-OI-Si MOSFET

NASA Astrophysics Data System (ADS)

Maity, Subir Kr.; Pandit, Soumya

2017-11-01

InGaAs is an attractive choice as alternate channel material in n-channel metal oxide semiconductor transistor for high-performance applications. However, electrostatic integrity of such device is poor. In this paper, we present a comprehensive technology computer-aided design simulation-based study of the effect of scaling the thickness of the buried oxide (BOX) region and varying the dielectric constant of BOX material on the electrostatic integrity, analogue/radio frequency (RF) performance and circuit performance of InGaAs-on-Insulator device. Device with thin BOX layer gives better drain-induced barrier lowering performance which enhances output resistance. The carrier mobility remains almost constant with thinning of BOX layer up to certain value. By lowering the dielectric constant of the BOX material, it is further possible to improve the analogue and RF performance. Effect of BOX thickness scaling and role of BOX dielectric material on gain-frequency response of common source amplifier is also studied. It is observed that frequency response of the amplifier improves for thin BOX and with low dielectric constant-based material.

Fundamental Insight on Developing Low Dielectric Constant Polyimides

NASA Technical Reports Server (NTRS)

Simpson, J. O.; SaintClair, A. K.

1997-01-01

Thermally stable, durable, insulative polyimides are in great demand for the fabrication of microelectronic devices. In this investigation dielectric and optical properties have been studied for several series of aromatic polyimides. The effect of polarizability, fluorine content, and free volume on dielectric constant was examined. In general, minimizing polarizability, maximizing free volume and fluorination all lowered dielectric constants in the polyimides studied.

Colossal dielectric response in all-ceramic percolative composite 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3-Pb2Ru2O6.5

NASA Astrophysics Data System (ADS)

Bobnar, V.; Hrovat, M.; Holc, J.; Filipič, C.; Levstik, A.; Kosec, M.

2009-02-01

An exceptionally high dielectric constant was obtained by making use of the conductive percolative phenomenon in all-ceramic composite, comprising of Pb2Ru2O6.5 with high electrical conductivity denoted as the conductive phase and ferroelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT) perovskite systems. Structural analysis revealed a uniform distribution of conductive ceramic grains within the PMN-PT matrix. Consequently, the dielectric response in the PMN-PT-Pb2Ru2O6.5 composite follows the predictions of the percolation theory. Thus, close to the percolation point exceptionally high values of the dielectric constant were obtained—values higher than 105 were detected at room temperature at 1 kHz. Fit of the data, obtained for samples of different compositions, revealed critical exponent and percolation point, which reasonably agree with the theoretically predicted values.

Optical characteristics of Tl0.995Cu0.005InS2 single crystals

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Ali, H. A. M.; Abu-Samaha, F. S. H.

2013-04-01

Optical properties of Tl0.995Cu0.005InS2 single crystals were studied using transmittance and reflectance measurements in the spectral wavelength range of 300-2500 nm. The optical constants (n and k) were calculated at room temperature. The analysis of the spectral behavior of the absorption coefficient in the absorption region revealed indirect transition. The refractive index dispersion data were analyzed in terms of the single oscillator model. Dispersion parameters such as the single oscillator energy (Eo), the dispersion energy (Ed), the high frequency dielectric constant (ε∞), the lattice dielectric constant (εL) and the ratio of free charge carrier concentration to the effective mass (N/m*) were estimated. The third order nonlinear susceptibility (χ(3)) was calculated according to the generalized Miller's rule. Also, the real and imaginary parts of the complex dielectric constant were determined.

Synthesis, morphological, electromechanical characterization of (CaMgFex)Fe1-xTi3O12-δ/PDMS nanocomposite thin films for energy storage application

NASA Astrophysics Data System (ADS)

Tripathy, Ashis; Sharma, Priyaranjan; Sahoo, Narayan

2018-03-01

At the present time, flexible and stretchable electronics has intended to use the new cutting-edge technologies for advanced electronic application. Currently, Polymers are being employed for such applications but they are not effective due to their low dielectric constant. To enhance the dielectric properties of polymer for energy storage application, it is necessary to add ceramic material of high dielectric constant to synthesize a polymer-ceramic composite. Therefore, a novel attempt has been made to enhance the dielectric properties of the Polydimethylsiloxane (PDMS) polymer by adding (CaMgFex)Fe1-xTi3O12-δ(0 90%), which can make it a potential material for advanced flexible electronic devices, energy storage and biomedical applications.

K-Band Latching Switches

NASA Technical Reports Server (NTRS)

Piotrowski, W. S.; Raue, J. E.

1984-01-01

Design, development, and tests are described for two single-pole-double-throw latching waveguide ferrite switches: a K-band switch in WR-42 waveguide and a Ka-band switch in WR-28 waveguide. Both switches have structurally simple junctions, mechanically interlocked without the use of bonding materials; they are impervious to the effects of thermal, shock, and vibration stresses. Ferrite material for the Ka-band switch with a proper combination of magnetic and dielectric properties was available and resulted in excellent low loss, wideband performance. The high power handling requirement of the K-band switch limited the choice of ferrite to nickel-zinc compositions with adequate magnetic properties, but with too low relative dielectric constant. The relative dielectric constant determines the junction dimensions for given frequency responses. In this case the too low value unavoidably leads to a larger than optimum junction volume, increasing the insertion loss and restricting the operating bandwidth. Efforts to overcome the materials-related difficulties through the design of a composite junction with increased effective dielectric properties efforts to modify the relative dielectric constant of nickel-zinc ferrite are examined.

Determination of mass density, dielectric, elastic, and piezoelectric constants of bulk GaN crystal.

PubMed

Soluch, Waldemar; Brzozowski, Ernest; Lysakowska, Magdalena; Sadura, Jolanta

2011-11-01

Mass density, dielectric, elastic, and piezoelectric constants of bulk GaN crystal were determined. Mass density was obtained from the measured ratio of mass to volume of a cuboid. The dielectric constants were determined from the measured capacitances of an interdigital transducer (IDT) deposited on a Z-cut plate and from a parallel plate capacitor fabricated from this plate. The elastic and piezoelectric constants were determined by comparing the measured and calculated SAW velocities and electromechanical coupling coefficients on the Z- and X-cut plates. The following new constants were obtained: mass density p = 5986 kg/m(3); relative dielectric constants (at constant strain S) ε(S)(11)/ε(0) = 8.6 and ε(S)(11)/ε(0) = 10.5, where ε(0) is a dielectric constant of free space; elastic constants (at constant electric field E) C(E)(11) = 349.7, C(E)(12) = 128.1, C(E)(13) = 129.4, C(E)(33) = 430.3, and C(E)(44) = 96.5 GPa; and piezoelectric constants e(33) = 0.84, e(31) = -0.47, and e(15) = -0.41 C/m(2).

Fluorinated epoxy resins with high glass transition temperatures

NASA Technical Reports Server (NTRS)

Griffith, James R.

1991-01-01

Easily processed liquid resins of low dielectric constants and high glass transition temperatures are useful for the manufacture of certain composite electronic boards. That combination of properties is difficult to acquire when dielectric constants are below 2.5, glass transition temperatures are above 200 C and processability is of conventional practicality. A recently issued patent (US 4,981,941 of 1 Jan. 1991) teaches practical materials and is the culmination of 23 years of research and effort and 15 patents owned by the Navy in the field of fluorinated resins of several classes. In addition to high fluorine content, practical utility was emphasized.

Enhancement of dielectric constant at percolation threshold in CaCu3 Ti4 O12 ceramic fabricated by both solid state and sol-gel process

NASA Astrophysics Data System (ADS)

Mukherjee, Rupam; Garcia, Lucia; Lawes, Gavin; Nadgorny, Boris

2014-03-01

We have investigated the large dielectric enhancement at the percolation threshold by introducing metallic RuO2 grains into a matrix of CaCu3Ti4O12 (CCTO). The intrinsic response of the pure CCTO samples prepared by solid state and sol-gel processes results in a dielectric constant on the order of 104 and 103 respectively with low loss. Scanning electron microscopy and energy dispersive x-ray spectroscopy indicate that a difference in the thickness of the copper oxide enriched grain boundary is the main reason for the different dielectric properties between these two samples. Introducing RuO2 metallic fillers in these CCTO samples yields a sharp increase of the dielectric constant at percolation threshold fc, by a factor of 6 and 3 respectively. The temperature dependence of the dielectric constant shows that the dipolar relaxation plays an important role in enhancing dielectric constant in composite systems.

Application of the compensated arrhenius formalism to dielectric relaxation.

PubMed

Petrowsky, Matt; Frech, Roger

2009-12-17

The temperature dependence of the dielectric rate constant, defined as the reciprocal of the dielectric relaxation time, is examined for several groups of organic solvents. Early studies of linear alcohols using a simple Arrhenius equation found that the activation energy was dependent on the chain length of the alcohol. This paper re-examines the earlier data using a compensated Arrhenius formalism that assumes the presence of a temperature-dependent static dielectric constant in the exponential prefactor. Scaling temperature-dependent rate constants to isothermal rate constants so that the dielectric constant dependence is removed results in calculated energies of activation E(a) in which there is a small increase with chain length. These energies of activation are very similar to those calculated from ionic conductivity data using compensated Arrhenius formalism. This treatment is then extended to dielectic relaxation data for n-alkyl bromides, n-nitriles, and n-acetates. The exponential prefactor is determined by dividing the temperature-dependent rate constants by the Boltzmann term exp(-E(a)/RT). Plotting the prefactors versus the static dielectric constant places the data on a single master curve for each group of solvents.

Study on the dielectric properties of Al2O3/TiO2 sub-nanometric laminates: effect of the bottom electrode and the total thickness

NASA Astrophysics Data System (ADS)

Ben Elbahri, M.; Kahouli, A.; Mercey, B.; Lebedev, O.; Donner, W.; Lüders, U.

2018-02-01

Dielectrics based on amorphous sub-nanometric laminates of TiO2 and Al2O3 are subject to elevated dielectric losses and leakage currents, in large parts due to the extremely thin individual layer thickness chosen for the creation of the Maxwell-Wagner relaxation and therefore the high apparent dielectric constants. The optimization of performances of the laminate itself being strongly limited by this contradiction concerning its internal structure, we will show in this study that modifications of the dielectric stack of capacitors based on these sub-nanometric laminates can positively influence the dielectric losses and the leakage, as for example the nature of the electrodes, the introduction of thick insulating layers at the laminate/electrode interfaces and the modification of the total laminate thickness. The optimization of the dielectric stack leads to the demonstration of a capacitor with an apparent dielectric constant of 90, combined with low dielectric loss (tan δ) of 7 · 10-2 and with leakage currents smaller than 1  ×  10-6 A cm-2 at 10 MV m-1.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khader, S. Abdul, E-mail: khadersku@gmail.com; Sankarappa, T., E-mail: sankarappa@rediffmail.com; Muneeswaran, M.

The Particulate nano-composites of ferrite and ferroelectric phases having the general formula (x) Mg{sub 0.25}Cu{sub 0.25}Zn{sub 0.5}Fe{sub 2}O{sub 4} + (1-x) BaTiO{sub 3} (x=15%, 30% and 45%) were synthesized by sintering mixtures of highly ferroelectric BaTiO{sub 3} (BT) and highly magneto-strictive magnetic component Mg{sub 0.25}Cu{sub 0.25}Zn{sub 0.5}Fe{sub 2}O{sub 4}(MCZF). The presence of constituent phases of ferrite, ferroelectric and their composites were probed and confirmed by X-ray diffraction (XRD) studies. Surface morphology of the samples has been investigated using Field Emission Scanning Electron Microscope (FESEM). The variation of dielectric constant and dissipation factor as a function of frequency from 100 Hzmore » to 1 MHz at room temperature were carried out using a Hioki LCR Hi-Tester. The dielectric constant and dielectric loss were found to decrease rapidly in the low frequency region and became almost constant in the high frequency region. The electrical conductivity deduced from the measured dielectric data has been thoroughly analyzed and found that the conduction mechanism in these composites is in conformity with small polaron hopping model. The ferroelectric properties of synthesized magneto-electric nano-composites were measured using P-E loop tracer.« less

Improved flexoelectricity in PVDF/barium strontium titanate (BST) nanocomposites

NASA Astrophysics Data System (ADS)

Hu, Xinping; Zhou, Yang; Liu, Jie; Chu, Baojin

2018-04-01

The flexoelectric effect of polymers is normally much weaker than that of ferroelectric oxides. In order to improve the flexoelectric response of the poly(vinylidene fluoride) (PVDF) ferroelectric polymer, PVDF/Ba0.67Si0.33TiO3 (BST) nanocomposites were fabricated. BST nanofibers were prepared by the electrospinning method, and the fibers were further surface modified with H2O2 to achieve a stronger interfacial interaction between the fibers and polymer matrix. Due to the high dielectric properties and strong flexoelectric effect of the BST, both dielectric constant and flexoelectric response of the composite with 25 vol. % surface modified BST are 3-4 times higher than those of PVDF. The dependence of the dielectric constant and the flexoelectric coefficient on the composition of the nanocomposites can be fitted by the empirical Yamada model, and the dielectric constant and the flexoelectric coefficient are correlated by a linear relationship. This study provides an approach to enhance the flexoelectric response of PVDF-based polymers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bissa, Shivangi; Naruka, Preeti; Bishnoi, Nidhi

In the present study the dielectric optical response of various nanostructures of ZnO deposited on silica substrate has been studied using Maxwell-Garnett Effective Medium Theory. Using the volume filling factors for different nanostructures of ZnO the effective dielectric constant has been evaluated. The variation of this effective dielectric constant with the frequency of applied signal has been investigated. Moreover, the reflectance of the film, power absorption and variation of refractive index with frequency has been studied. The results obtained show that the quantum confinement effects in ZnO nano-structural films deposited on silica substrate give rise to distinct optical properties makingmore » it an ideal choice for high power THz generation.« less

Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, H.; Shohet, J. L.; Ryan, E. T.

2014-11-17

Vacuum ultraviolet (VUV) irradiation is generated during plasma processing in semiconductor fabrications, while the effect of VUV irradiation on the dielectric constant (k value) of low-k materials is still an open question. To clarify this problem, VUV photons with a range of energies were exposed on low-k organosilicate dielectrics (SiCOH) samples at room temperature. Photon energies equal to or larger than 6.0 eV were found to decrease the k value of SiCOH films. VUV photons with lower energies do not have this effect. This shows the need for thermal heating in traditional ultraviolet (UV) curing since UV light sources do notmore » have sufficient energy to change the dielectric constant of SiCOH and additional energy is required from thermal heating. In addition, 6.2 eV photon irradiation was found to be the most effective in decreasing the dielectric constant of low-k organosilicate films. Fourier Transform Infra-red Spectroscopy shows that these 6.2 eV VUV exposures removed organic porogens. This contributes to the decrease of the dielectric constant. This information provides the range of VUV photon energies that could decrease the dielectric constant of low-k materials most effectively.« less

Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

NASA Astrophysics Data System (ADS)

Cristea, D.; Crisan, A.; Cretu, N.; Borges, J.; Lopes, C.; Cunha, L.; Ion, V.; Dinescu, M.; Barradas, N. P.; Alves, E.; Apreutesei, M.; Munteanu, D.

2015-11-01

The main purpose of this work is to present and to interpret the change of electrical properties of TaxNyOz thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N2 and O2, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, -50 V or -100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance TaxNyOz films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric TaxNyOz films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

Effect of CaRuO3 interlayer on the dielectric properties of Ba(Zr ,Ti)O3 thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Tang, X. G.; Tian, H. Y.; Wang, J.; Wong, K. H.; Chan, H. L. W.

2006-10-01

Ba(Zr0.2Ti0.8)O3 (BZT) thin films on Pt(111)/Ti /SiO2/Si(100) substrates without and with CaRuO3 (CRO) buffer layer were fabricated at 650°C in situ by pulsed laser deposition. The BZT thin films showed a dense morphology, many clusters are found on the surface images of BZT/Pt films, which are composed by nanosized grains of 25-35nm; the average grain size of BZT/CRO films is about 80nm, which lager than that of BZT/Pt thin film. The dielectric constants and dissipation factors of BZT/Pt and BZT/CRO thin films were 392 and 0.019 and 479 and 0.021 at 1MHz, respectively. The dielectric constant of BZT/Pt and BZT/CRO thin films changes significantly with applied dc bias field and has high tunabilities and figures of merit of ˜70% and 37 and 75% and 36, respectively, under an applied field of 400kV /cm. The possible microstructural background responsible for the high dielectric constant and tunability was discussed.

SHALLOW ELECTRON TRAPS IN SINGLE CRYSTALS OF RUTILE STUDIED BY X-RAY IRRADIATION USING LOW FREQUENCY DIELECTRIC MEASUREMENTS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, K.G.

1962-04-01

Defect structure in single crystals of rutile was studied by dielectric measurements at 2 cps and above, before and after irradiation with hard x rays. The results were analyzed by a Cole-Cole plot, which is a circle with its cenier shifted away from the dielectric constant axis. X irradiation shifts the center of the Cole-Cole plot toward the dielectric constant axis, indicating a decrease in distribution of relaxation times by evacuation of electrons from their shallow traps, which after release produce interfacial polarization. An attempt was also made to calculate the a-c behavior from d-c data, but the errors atmore » frequencies of measurement were toe high, thus defying comparison with experimental data. (auth)« less

Influence of Sm doping on structural and dielectric properties of Y{sub 1-x}Sm{sub x}MnO{sub 3} (x = 0, 0.10, 0.20) manganites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dar, Mashkoor Ahmad, E-mail: darmashkoor.phst@gmail.com; Dar, Hilal Ahmad; Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com

2016-05-06

Structural and dielectric properties of polycrystalline YMnO{sub 3} (x = 0.0, 0.10 and 0.20) which was prepared by solid-state reaction route, have been investigated. The X-ray diffraction pattern reveals that all the samples are in single phase and show hexagonal structure with P63cm space group. The particle size decreases with increase in Sm doping while to that X-ray density increases with increasing x. The dielectric constant (ε’) of Y{sub 1-x}Sm{sub x}MnO{sub 3} measured in the frequency range 10 Hz to 1MHz is much higher at lower frequencies (≤ 1KHz) and its value decreases with enhanced frequency. At very high frequencies, ε’more » becomes frequency independent and is attributed to Maxwell Wagner type of interfacial polarization model. A very high value of dielectric constant ∼18642 is observed for x = 10%. The dielectric loss (tan δ) decreases wit increase in Sm doping.« less

A novel low cost non-aqueous chemical route for giant dielectric constant CaCu3Ti4O12 ceramic

NASA Astrophysics Data System (ADS)

Singh, Laxman; Kim, Ill Won; Woo, Won Seok; Sin, Byung Cheol; Lee, Hyung-il; Lee, Youngil

2015-05-01

This paper reports a simple, fast, low cost and environment-friendly route for preparing a highly crystalline giant dielectric material, CaCu3Ti4O12 (CCTO), through combustion of metal nitrates in non-aqueous precursor solution using inexpensive solid TiO2 powder. The route to producing pure phase CCTO ceramic using stable solid TiO2 is better than other several sol-gel routes reported earlier in which expensive alkoxides, oxynitrates, or chlorides of titanium are used as the titanium sources. X-ray diffraction revealed the formation of cubic perovskite CCTO. Scanning electron microscopy image showed the average grain sizes in the range of 1.5-5 μm. At 10 kHz and room temperature, the best CCTO ceramic exhibited a high dielectric constant, ε‧ ∼43325.24, with low dielectric loss, tan δ ∼0.088. The dielectric relaxation behavior was rationalized from impedance and modulus studies and the presence of a non-Debye type of relaxation was confirmed.

The effect of diamic acid additives on the dielectric constant of polyimides

NASA Technical Reports Server (NTRS)

Stoakley, Diane M.; St. Clair, Anne K.

1988-01-01

The effect of six selected diamic acids additives (including 2,2-prime bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride-aniline (An); 4,4-prime-oxydiphthalic anhydride-An, 3,3-prime diaminodiphenyl sulfone-phthalic anhydride (PA); 4,4-prime-oxydianiline-PA; 2,2-bis 4(4-aminophenoxy)phenyl hexafluoropropane-PA; and 2,2-bis 4(3-aminophenoxy)phenyl hexafluoropropane-PA) on the dielectric constants of low-dielectric-constant polyimide resins was evaluated. It was found that the effect of the incorporation of the diamic acids on reducing the dielectric constant of polyimides may be limited as the dielectric constant of the base resin itself becomes very low. The additives were found to lower the resin's values of glass transition temperature, with no effect on thermooxidative stability.

Dielectric constant of liquid alkanes and hydrocarbon mixtures

NASA Technical Reports Server (NTRS)

Sen, A. D.; Anicich, V. G.; Arakelian, T.

1992-01-01

The complex dielectric constants of n-alkanes with two to seven carbon atoms have been measured. The measurements were conducted using a slotted-line technique at 1.2 GHz and at atmospheric pressure. The temperature was varied from the melting point to the boiling point of the respective alkanes. The real part of the dielectric constant was found to decrease with increasing temperature and correlate with the change in the molar volume. An upper limit to all the loss tangents was established at 0.001. The complex dielectric constants of a few mixtures of liquid alkanes were also measured at room temperature. For a pentane-octane mixture the real part of the dielectric constant could be explained by the Clausius-Mosotti theory. For the mixtures of n-hexane-ethylacetate and n-hexane-acetone the real part of the dielectric constants could be explained by the Onsager theory extended to mixtures. The dielectric constant of the n-hexane-acetone mixture displayed deviations from the Onsager theory at the highest fractions of acetone. The dipole moments of ethylacetate and acetone were determined for dilute mixtures using the Onsager theory and were found to be in agreement with their accepted gas-phase values. The loss tangents of the mixtures exhibited a linear relationship with the volume fraction for low concentrations of the polar liquids.

Colossal dielectric behavior of semiconducting Sr2TiMnO6 ceramics

NASA Astrophysics Data System (ADS)

Meher, K. R. S. Preethi; Varma, K. B. R.

2009-02-01

Manganitelike double perovskite Sr2TiMnO6 (STMO) ceramics fabricated from the powders synthesized via the solid-state reaction route, exhibited dielectric constants as high as ˜105 in the low frequency range (100 Hz-10 kHz) at room temperature. The Maxwell-Wagner type of relaxation mechanism was found to be more appropriate to rationalize such high dielectric constant values akin to that observed in materials such as KxTiyNi(1-x-y)O and CaCu3Ti4O12. The dielectric measurements carried out on the samples with different thicknesses and electrode materials reflected the influence of extrinsic effects. The impedance studies (100 Hz-10 MHz) in the 180-300 K temperature range revealed the presence of two dielectric relaxations corresponding to the grain boundary and the electrode. The dielectric response of the grain boundary was found to be weakly dependent on the dc bias field (up to 11 V/cm). However, owing to the electrode polarization, the applied ac/dc field had significant effect on the low frequency dielectric response. At low temperatures (100-180 K), the dc conductivity of STMO followed a variable range hopping behavior. Above 180 K, it followed the Arrhenius behavior because of the thermally activated conduction process. The bulk conductivity relaxation owing to the localized hopping of charge carriers obeyed the typical universal dielectric response.

Dielectric Properties of PANI/CuO Nanocomposites

NASA Astrophysics Data System (ADS)

Ambalagi, Sharanabasamma M.; Devendrappa, Mahalesh; Nagaraja, Sannakki; Sannakki, Basavaraja

2018-02-01

The combustion method is used to prepare the Copper Oxide (CuO) nanoparticles. The nanocomposites of Polyaniline (PANI) by doping with copper oxide nanoparticles have synthesized at 10, 20, 30, 40 and 50 different weight percentages during the in-situ polymerization. The samples of nanocomposite of PANI-CuO were characterized by using X-Ray diffraction (XRD) technique. The physical properties such as dielectric constant, dielectric loss and A C conductivity of the nanocomposites are studied as a function of frequency in the range 5Hz-35MHz at room temperature. It is found that the dielectric constant decreases as the frequency increases. The dielectric constant it remains constant at higher frequencies and it is also observed that in particular frequency both the dielectric constant and dielectric loss are decreased as a weight percentage of CuO increased. In case of AC conductivity it is found that as the frequency increases the AC conductivity remains constant up to 3.56MHz and afterwards it increases as frequency increases. This is due to the increase in charge carriers through the hopping mechanism in the polymer nanocomposites. It is also observed that as a weight percentage of CuO increased the AC conductivity is also increasing at a particular frequency.

Multiple Interfacial Fe3O4@BaTiO3/P(VDF-HFP) Core-Shell-Matrix Films with Internal Barrier Layer Capacitor (IBLC) Effects and High Energy Storage Density.

PubMed

Zhou, Ling; Fu, Qiuyun; Xue, Fei; Tang, Xiahui; Zhou, Dongxiang; Tian, Yahui; Wang, Geng; Wang, Chaohong; Gou, Haibo; Xu, Lei

2017-11-22

Flexible nanocomposites composed of high dielectric constant fillers and polymer matrix have shown great potential for electrostatic capacitors and energy storage applications. To obtain the composited material with high dielectric constant and high breakdown strength, multi-interfacial composited particles, which composed of conductive cores and insulating shells and possessed the internal barrier layer capacitor (IBLC) effect, were adopted as fillers. Thus, Fe 3 O 4 @BaTiO 3 core-shell particles were prepared and loaded into the poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) polymer matrix. As the mass fraction of core-shell fillers increased from 2.5 wt % to 30 wt %, the dielectric constant of the films increased, while the loss tangent remained at a low level (<0.05 at 1 kHz). Both high electric displacement and high electric breakdown strength were achieved in the films with 10 wt % core-shell fillers loaded. The maximum energy storage density of 7.018 J/cm 3 was measured at 2350 kV/cm, which shows significant enhancement than those of the pure P(VDF-HFP) films and analogous composited films with converse insulating-conductive core-shell fillers. A Maxwell-Wagner capacitor model was also adopted to interpret the efficiency of IBLC effects on the suppressed loss tangent and the superior breakdown strength. This work explored an effective approach to prepare dielectric nanocomposites for energy storage applications experimentally and theoretically.

Development of a 500 GHz Optoelectronic Modulator Using Superconducting Transmission Lines

DTIC Science & Technology

1992-08-31

for operation in the multi- hundred-GHz regime, as well as high-power picosecond switching and the newly developed Semiconductor Optical, Temporal...bulk dielectric constants in the near infrared and millimeter-wave regimes that are essentially equal.J31 We have shown that encapsulating a...dielectric constant was found to be 11.60 (+/- 0.02). This value agrees remarkably well with the bulk value of GaAs at 1.3 4m, 11.62 [3]. The

Full spectrum optical safeguard

DOEpatents

Ackerman, Mark R.

2008-12-02

An optical safeguard device with two linear variable Fabry-Perot filters aligned relative to a light source with at least one of the filters having a nonlinear dielectric constant material such that, when a light source produces a sufficiently high intensity light, the light alters the characteristics of the nonlinear dielectric constant material to reduce the intensity of light impacting a connected optical sensor. The device can be incorporated into an imaging system on a moving platform, such as an aircraft or satellite.

Dielectric spectroscopy of Ag-starch nanocomposite films

NASA Astrophysics Data System (ADS)

Meena; Sharma, Annu

2018-04-01

In the present work Ag-starch nanocomposite films were fabricated via chemical reduction route. The formation of Ag nanoparticles was confirmed using transmission electron microscopy (TEM). Further the effect of varying concentration of Ag nanoparticles on the dielectric properties of starch has been studied. The frequency response of dielectric constant (ε‧), dielectric loss (ε″) and dissipation factor tan(δ) has been studied in the frequency range of 100 Hz to 1 MHz. Dielectric data was further analysed using Cole-Cole plots. The dielectric constant of starch was found to be 4.4 which decreased to 2.35 in Ag-starch nanocomposite film containing 0.50 wt% of Ag nanoparticles. Such nanocomposites with low dielectric constant have potential applications in microelectronic technologies.

On the Dielectric Constant for Acetanilide: Experimental Measurements and Effect on Energy Transport

NASA Astrophysics Data System (ADS)

Careri, G.; Compatangelo, E.; Christiansen, P. L.; Halding, J.; Skovgaard, O.

1987-01-01

Experimental measurements of the dielectric constant for crystalline acetanilide powder for temperatures ranging from - 140°C to 20°C and for different hydration levels are presented. A Davydov-soliton computer model predicts dramatic changes in the energy transport and storage for typically increased values of the dielectric constant.

Dielectric studies on PVA/PVP blend polymer electrolyte films

NASA Astrophysics Data System (ADS)

Kumar, B. Ranjit; Basha, S. K. Shahenoor; Rao, M. C.

2018-05-01

Biodegradable blend polymer electrolytes of PVA/PVP with different wt% ratios of MgCl2.6H2O have been prepared using solution cast technique. Dielectric studies were performed on to the prepared films using HIOKI 3532-50 in the frequency range 5000 Hz - 50000 KHz. As increasing the frequency the dielectric constant gradually decreases and found to be high for the sample prepared at 30 wt%; this concludes that the drifting of ions is high giving raise to conductivity phenomenon.

A symmetry breaking phase transition-triggered high-temperature solid-state quadratic nonlinear optical switch coupled with a switchable dielectric constant in an organic-inorganic hybrid compound.

PubMed

Mei, Guang-Quan; Zhang, Han-Yue; Liao, Wei-Qiang

2016-09-25

An organic-inorganic hybrid compound, [NH3(CH2)5NH3]SbCl5, exhibits a switchable second harmonic generation (SHG) effect between SHG-OFF and SHG-ON states and tunable dielectric behaviors between high and low dielectric states, connected with the changes in the dynamics of 1,5-pentanediammonium cations during its centrosymmetric-to-noncentrosymmetric symmetry breaking phase transition at 365.4 K.

The transmembrane gradient of the dielectric constant influences the DPH lifetime distribution.

PubMed

Konopásek, I; Kvasnicka, P; Amler, E; Kotyk, A; Curatola, G

1995-11-06

The fluorescence lifetime distribution of 1,6-diphenyl-1,3,5-hexatriene (DPH) and 1-[4-(trimethylamino)phenyl]-6-phenyl-1,3,5-hexatriene (TMA-DPH) in egg-phosphatidylcholine liposomes was measured in normal and heavy water. The lower dielectric constant (by approximately 12%) of heavy water compared with normal water was employed to provide direct evidence that the drop of the dielectric constant along the membrane normal shifts the centers of the distribution of both DPH and TMA-DPH to higher values and sharpens the widths of the distribution. The profile of the dielectric constant along the membrane normal was not found to be a linear gradient (in contrast to [1]) but a more complex function. Presence of cholesterol in liposomes further shifted the center of the distributions to higher value and sharpened them. In addition, it resulted in a more gradient-like profile of the dielectric constant (i.e. linearization) along the normal of the membrane. The effect of the change of dielectric constant on the membrane proteins is discussed.

Wave propagation in and around negative-dielectric-constant discharge plasma

NASA Astrophysics Data System (ADS)

Sakai, Osamu; Iwai, Akinori; Omura, Yoshiharu; Iio, Satoshi; Naito, Teruki

2018-03-01

The modes of wave propagation in media with a negative dielectric constant are not simple, unlike those for electromagnetic waves in media with a positive dielectric constant (where modes propagate inside the media with positive phase velocity since the refractive index is usually positive). Instead, they depend on the permeability sign, either positive or negative, and exhibit completely different features. In this report, we investigated a wave confined on the surface of a negative-dielectric-constant and a positive-permeability plasma medium for which the refractive index is imaginary. The propagation mode is similar to surface plasmon polaritons on the metal containing free electrons, but its frequency band is different due to the significant spatial gradient of the dielectric constant and a different pressure term. We also studied a wave with a negative dielectric constant and negative permeability, where the refractive index is negative. This wave can propagate inside the media, but its phase velocity is negative. It also shares similar qualities with waves in plasmonic devices with negative permeability in the photon range.

Structural, magnetic and spectral properties of Gd and Dy co-doped dielectrically modified Co-Ni (Ni0.4Co0.6Fe2O4) ferrites

NASA Astrophysics Data System (ADS)

Ditta, Allah; Khan, Muhammad Azhar; Junaid, Muhammad; Khalil, R. M. Arif; Warsi, Muhammad Farooq

2017-02-01

Gadolinium (Gd) and Dysprosium (Dy) co-doped Ni-Co (Ni0.4Co0.6Fe2O4) ferrites were prepared by micro-emulsion route. X-ray diffraction (XRD) analysis indicated the development of cubic spinel structure. The lattice parameter and X-ray density were found to increase from 8.24 to 8.31 Å and 5.57 to 5.91 (gm/cm3) respectively as the Gd-Dy contents increased in nickel-cobalt ferrites. The crystallite size calculated from the Scherrer's formula exhibited the formation of nanocrystalline ferrites (13-26 nm). Two foremost absorption bands observed in FTIR spectra within 400 cm-1 (υ2) to 600 cm-1 (υ1) which correspond to stretching vibrations of tetrahedral and octahedral complexes respectively. The dielectric constant (ε) and dielectric loss (tanδ) were decreased by the optimization of frequency and abrupt decrease in the low frequency region and higher values in the high frequency region were observed. The dielectric dispersion was due to rapid decrease of dielectric constant in the low frequency region. This variation of dielectric dispersion was explicated in the light of space charge polarization model of Maxwell-Wagner. The dielectric loss occurs in these ferrites due to electron hopping and defects in the dipoles. The electron hopping was possible at low frequency range but at higher frequency the dielectric loss was decreased with the decrease of electron hopping. Magnetic properties were observed by measuring M-H loops. Due to low dielectric loss and dielectric constant these materials were appropriate in the fabrication of switching and memory storage devices.

Dielectric Properties of PMMA and its Composites with ZrO2

NASA Astrophysics Data System (ADS)

Sannakki, Basavaraja; Anita

The polymer films of PMMA with different thickness and its composites with ZrO2 at various weight percentages but of same thickness have been studied. The determination of its dielectric properties, dielectric loss, a.conductivity and dielectric modulus were carried out using capacitance measurements of the above samples as a function of frequency, over the range 50 Hz - 5 MHz at room temperature. The films of PMMA and its composites have been characterized using X-Ray Diffractometer. The dielectric permittivity of films of PMMA behaves nonlinearly as frequency increases over the range 50-300 Hz, where as above 300 Hz the values of dielectric constant remains constant. But it is observed that the dielectric constant of PMMA increases as thickness of the film increases. In case of composite films of PMMA with ZrO2 the values of dielectric permittivity decreases gradually up to frequency of around 1 KHz and at higher frequencies it remains constant for all the weight percentages of ZrO2. The complex form of dielectric modulus of PMMA is obtained from the experimentally measured data of dielectric constant and dielectric loss values. The relaxation time of the orientation of dipoles is obtained from the peak value of angular frequency through the plots of imaginary part of electrical modulus as function of frequency. The impedance of PMMA polymer increases as thickness of the films increases. The a c conductivity of PMMA film remains constant up to frequency of 1 MHz and above. It shows a nonlinear phenomenon with peak values at frequency 4 MHz. Shape and size of the nanoparticles of composite film of PMMA with ZrO2 was analyzed by Field Emission Scanning Electron Microscope (FESEM).

A layered microchip conductance detector with through-layer access to detection fields and high sensitivity to dielectric constant.

PubMed

Suganuma, Y; Dhirani, A-A

2011-04-01

The present study explores a novel apertured microchip conductance detector (AMCD) that is sensitive to dielectric constant. Fashioned on silicon oxide/silicon using optical microlithography, the detector has novel parallel-plate geometry with a top mesh electrode, a middle apertured insulator, and a bottom conducting electrode. This monolithic apertured architecture is planar and may be provided with a thin insulator layer enabling large capacitances, while the top mesh electrode and middle apertured-insulator enable access to regions of the capacitor where electric fields are strong. Hence, the detector is sensitive yet mechanically robust. To test its response, the AMCD was immersed in various solvents, namely water, methanol, acetonitrile, and hexanes. Its response was found to vary in proportion to the solvents' respective dielectric constants. The AMCD was also able to distinguish quantitatively the presence of various molecules in solution, including molecules with chromophores [such as acetylsalicylic acid (ASA)] in methanol and those without chrompohores [such as polyethylene glycol 200 Daltons (PEG200)] in methanol or water. The universal nature of dielectric constant and the microchip detector's sensitivity point to a wide range of potential applications. © 2011 American Institute of Physics

Electrostatically assisted fabrication of silver-dielectric core/shell nanoparticles thin film capacitor with uniform metal nanoparticle distribution and controlled spacing.

PubMed

Li, Xue; Niitsoo, Olivia; Couzis, Alexander

2016-03-01

An electrostatically-assisted strategy for fabrication of thin film composite capacitors with controllable dielectric constant (k) has been developed. The capacitor is composed of metal-dielectric core/shell nanoparticle (silver/silica, Ag@SiO2) multilayer films, and a backfilling polymer. Compared with the simple metal particle-polymer mixtures where the metal nanoparticles (NP) are randomly dispersed in the polymer matrix, the metal volume fraction in our capacitor was significantly increased, owing to the densely packed NP multilayers formed by the electrostatically assisted assembly process. Moreover, the insulating layer of silica shell provides a potential barrier that reduces the tunneling current between neighboring Ag cores, endowing the core/shell nanocomposites with a stable and relatively high dielectric constant (k) and low dielectric loss (D). Our work also shows that the thickness of the SiO2 shell plays a dominant role in controlling the dielectric properties of the nanocomposites. Control over metal NP separation distance was realized not only by variation the shell thickness of the core/shell NPs but also by introducing a high k nanoparticle, barium strontium titanate (BST) of relatively smaller size (∼8nm) compared to 80-160nm of the core/shell Ag@SiO2 NPs. The BST assemble between the Ag@SiO2 and fill the void space between the closely packed core/shell NPs leading to significant enhancement of the dielectric constant. This electrostatically assisted assembly method is promising for generating multilayer films of a large variety of NPs over large areas at low cost. Copyright © 2015 Elsevier Inc. All rights reserved.

Microwave measurement and modeling of the dielectric properties of vegetation

NASA Astrophysics Data System (ADS)

Shrestha, Bijay Lal

Some of the important applications of microwaves in the industrial, scientific and medical sectors include processing and treatment of various materials, and determining their physical properties. The dielectric properties of the materials of interest are paramount irrespective of the applications, hence, a wide range of materials covering food products, building materials, ores and fuels, and biological materials have been investigated for their dielectric properties. However, very few studies have been conducted towards the measurement of dielectric properties of green vegetations, including commercially important plant crops such as alfalfa. Because of its high nutritional value, there is a huge demand for this plant and its processed products in national and international markets, and an investigation into the possibility of applying microwaves to improve both the net yield and quality of the crop can be beneficial. Therefore, a dielectric measurement system based upon the probe reflection technique has been set up to measure dielectric properties of green plants over a frequency range from 300 MHz to 18 GHz, moisture contents from 12%, wet basis to 79%, wet basis, and temperatures from -15°C to 30°C. Dielectric properties of chopped alfalfa were measured with this system over frequency range of 300 MHz to 18 GHz, moisture content from 11.5%, wet basis, to 73%, wet basis, and density over the range from 139 kg m-3 to 716 kg m-3 at 23°C. The system accuracy was found to be +/-6% and +/-10% in measuring the dielectric constant and loss factor respectively. Empirical, semi empirical and theoretical models that require only moisture content and operating frequency were determined to represent the dielectric properties of both leaves and stems of alfalfa at 22°C. The empirical models fitted the measured dielectric data extremely well. The root mean square error (RMSE) and the coefficient of determination (r2) for dielectric constant and loss factor of leaves were 0.89 and 0.99, and 0.52 and 0.99 respectively. The RMSE and r2 values for dielectric constant and loss factor of stems were 0.89 and 0.99, and 0.77 and 0.99 respectively. Among semi empirical or theoretical models, Power law model showed better performance (RMSE = 1.78, r2 = 0.96) in modeling dielectric constant of leaves, and Debye-ColeCole model was more appropriate (RMSE = 1.23, r2 = 0.95) for the loss factor. For stems, the Debye-ColeCole models (developed on an assumption that they do not shrink as they dry) were found to be the best models to calculate the dielectric constant with RMSE 0.53 and r2 = 0.99, and dielectric loss factor with RMSE = 065 and r2 = 0.95. (Abstract shortened by UMI.)

Thermally stable, low dielectric polyquinolines for aerospace and electronics applications

NASA Technical Reports Server (NTRS)

Hendricks, Neil H.; Marrocco, Matthew L.; Stoakley, Diane M.; St. Clair, Anne K.

1990-01-01

Four new high molecular weight, linear chain polyquinolines have been synthesized and fabricated into high quality free standing films. These polymers are characterized by moderate to high glass transition temperatures, excellent thermal and thermooxidative stability, extremely low dielectric constants and good planarizing characteristics. The polymers absorb very low quantities of moisture. As a consequence, the dielectric constant of one new polyquinoline has been shown to be quite insensitive to exposure to warm/wet conditions. Isothermal aging of one new derivative in air has been carried out at elevated temperatures (250 C to 345 C). The results demonstrate truly outstanding thermooxidative stability. Additional characterizations include molecular weight determinations, solubilities and film-forming characteristics, density measurements, and UV-Vis spectroscopy. The data acquired to date suggest that the polymers may find use as refractive films and coatings and as interlevel planarizers in microelectronics applications.

Research Update: Polyimide/CaCu3Ti4O12 nanofiber functional hybrid films with improved dielectric properties

NASA Astrophysics Data System (ADS)

Yang, Yang; Wang, Ziyu; Ding, Yi; Lu, Zhihong; Sun, Haoliang; Li, Ya; Wei, Jianhong; Xiong, Rui; Shi, Jing; Liu, Zhengyou; Lei, Qingquan

2013-11-01

This work reports the excellent dielectric properties of polyimide (PI) embedded with CaCu3Ti4O12 (CCTO) nanofibers. The dielectric behaviors were investigated over a frequency of 100 Hz-1 MHz. It is shown that embedding CCTO nanofibers with high aspect ratio (67) is an effective means to enhance the dielectric permittivity and reduce the percolation threshold. The dielectric permittivity of PI/CCTO nanofiber composites is 85 with 1.5 vol.% loading of filler, also the dielectric loss is only 0.015 at 100 Hz. Monte Carlo simulation was used to investigate the percolation threshold of CCTO nanofibers reinforced polyimide matrix by using excluded volume theory and soft, hard-core models. The results are in good agreement with the percolation theory and the hard-core model can well explain the percolation phenomena in PI/CCTO nanofiber composites. The dielectric properties of the composites will meet the practical requirements for the application in high dielectric constant capacitors and high energy density materials.

Enhanced dielectric performance of three phase percolative composites based on thermoplastic-ceramic composites and surface modified carbon nanotube

NASA Astrophysics Data System (ADS)

Yang, Yang; Sun, Haoliang; Zhu, Benpeng; Wang, Ziyu; Wei, Jianhong; Xiong, Rui; Shi, Jing; Liu, Zhengyou; Lei, Qingquan

2015-01-01

Three-phase composites were prepared by embedding CaCu3Ti4O12(CCTO) nanoparticles and Multiwalled Carbon Nanotube (MWNT) into polyimide (PI) matrix via in-situ polymerization. The dependences of electric and dielectric properties of the resultant composites on volume fractions of filler and frequency were investigated. The dielectric permittivity of PI/CCTO-surface modified MWNT (MWNT-S) composite reached as high as 252 at 100 Hz at 0.1 vol. % filler (MWNT-S), which is about 63 times higher than that of pure PI. Also the dielectric loss is only 0.02 at 100 Hz. The results are in good agreement with the percolation theory. It is shown that embedding high aspect ratio MWNT-S in PI/CCTO composites is an effective means to enhance the dielectric permittivity and reduce the percolation threshold. The dielectric properties of the composites will meet the practical requirements for the application in high dielectric constant capacitors and high energy density materials.

High aspect ratio patterning of photosensitive polyimide with low thermal expansion coefficient and low dielectric constant

NASA Astrophysics Data System (ADS)

Dick, Andrew R.; Bell, William K.; Luke, Brendan; Maines, Erin; Mueller, Brennen; Rawlings, Brandon; Kohl, Paul A.; Grant Willson, C.

2016-07-01

A photosensitive polyimide system based on amine catalyzed imidization of a precursor poly(amic ester) is described. The material is based on the meta ethyl ester of pyromellitic dianhydride and 2,2' bis(trifluoromethyl)benzidine. It acts as a negative tone resist when formulated with a photobase generator. The material exhibits a dielectric constant of 3.0 in the gigahertz range, a coefficient of thermal expansion of 6±2 ppm/K, and can be patterned to aspect ratios of >2 when formulated with a highly quantum efficient cinnamide type photobase generator.

Decorating TiO2 Nanowires with BaTiO3 Nanoparticles: A New Approach Leading to Substantially Enhanced Energy Storage Capability of High-k Polymer Nanocomposites.

PubMed

Kang, Da; Wang, Guanyao; Huang, Yanhui; Jiang, Pingkai; Huang, Xingyi

2018-01-31

The urgent demand of high energy density and high power density devices has triggered significant interest in high dielectric constant (high-k) flexible nanocomposites comprising dielectric polymer and high-k inorganic nanofiller. However, the large electrical mismatch between polymer and nanofiller usually leads to earlier electric failure of the nanocomposites, resulting in an undesirable decrease of electrical energy storage capability. A few studies show that the introduction of moderate-k shell onto a high-k nanofiller surface can decrease the dielectric constant mismatch, and thus, the corresponding nanocomposites can withstand high electric field. Unfortunately, the low apparent dielectric enhancement of the nanocomposites and high electrical conductivity mismatch between matrix and nanofiller still result in low energy density and low efficiency. In this study, it is demonstrated that encapsulating moderate-k nanofiller with high-k but low electrical conductivity shell is effective to significantly enhance the energy storage capability of dielectric polymer nanocomposites. Specifically, using BaTiO 3 nanoparticles encapsulated TiO 2 (BaTiO 3 @TiO 2 ) core-shell nanowires as filler, the corresponding poly(vinylidene fluoride-co-hexafluoropylene) nanocomposites exhibit superior energy storage capability in comparison with the nanocomposites filled by either BaTiO 3 or TiO 2 nanowires. The nanocomposite film with 5 wt % BaTiO 3 @TiO 2 nanowires possesses an ultrahigh discharged energy density of 9.95 J cm -3 at 500 MV m -1 , much higher than that of commercial biaxial-oriented polypropylene (BOPP) (3.56 J cm -3 at 600 MV m -1 ). This new strategy and corresponding results presented here provide new insights into the design of dielectric polymer nanocomposites with high electrical energy storage capability.

Eeonomer 200F®: A High-Performance Nanofiller for Polymer Reinforcement—Investigation of the Structure, Morphology and Dielectric Properties of Polyvinyl Alcohol/Eeonomer-200F® Nanocomposites for Embedded Capacitor Applications

NASA Astrophysics Data System (ADS)

Deshmukh, Kalim; Ahamed, M. Basheer; Deshmukh, Rajendra R.; Sadasivuni, Kishor Kumar; Ponnamma, Deepalekshmi; Pasha, S. K. Khadheer; AlMaadeed, Mariam Al-Ali; Polu, Anji Reddy; Chidambaram, K.

2017-04-01

In the present study, Eeonomer 200F® was used as a high-performance nanofiller to prepare polyvinyl alcohol (PVA)-based nanocomposite films using a simple and eco-friendly solution casting technique. The prepared PVA/Eeonomer nanocomposite films were further investigated using various techniques including Fourier transform infrared spectroscopy, x-ray diffraction, thermogravimetric analysis, polarized optical microscopy, scanning electron microscopy and mechanical testing. The dielectric behavior of the nanocomposites was examined over a broad frequency range from 50 Hz to 20 MHz and temperatures ranging from 40°C to 150°C. A notable improvement in the thermal stability of the PVA was observed with the incorporation of Eeonomer. The nanocomposites also demonstrated improved mechanical properties due to the fine dispersion of the Eeonomer, and good compatibility and strong interaction between the Eeonomer and the PVA matrix. A significant improvement was observed in the dielectric properties of the PVA upon the addition of Eeonomer. The nanocomposites containing 5 wt.% Eeonomer exhibited a dielectric constant of about 222.65 (50 Hz, 150°C), which was 18 times that of the dielectric constant (12.33) of neat PVA film under the same experimental conditions. These results thus indicate that PVA/Eeonomer nanocomposites can be used as a flexible high-k dielectric material for embedded capacitor applications.

High-Temperature Electromechanical Characterization of AlN Single Crystals.

PubMed

Kim, Taeyang; Kim, Jinwook; Dalmau, Rafael; Schlesser, Raoul; Preble, Edward; Jiang, Xiaoning

2015-10-01

Hexagonal AlN is a non-ferroelectric material and does not have any phase transition up to its melting point (>2000°C), which indicates the potential use of AlN for high-temperature sensing. In this work, the elastic, dielectric, and piezoelectric constants of AlN single crystals were investigated at elevated temperatures up to 1000°C by the resonance method. We used resonators of five different modes to obtain a complete set of material constants of AlN single crystals. The electrical resistivity of AlN at elevated temperature (1000°C) was found to be greater than 5 × 10(10) Ω · cm. The resonance frequency of the resonators, which was mainly determined by the elastic compliances, decreased linearly with increasing temperature, and was characterized by a relatively low temperature coefficient of frequency, in the range of -20 to -36 ppm/°C. For all the investigated resonator modes, the elastic constants and the electromechanical coupling factors exhibited excellent temperature stability, with small variations over the full temperature range, <11.2% and <17%, respectively. Of particular significance is that due to the pyroelectricity of AlN, both the dielectric and the piezoelectric constants had high thermal resistivity even at extreme high temperature (1000°C). Therefore, high electrical resistivity, temperature independence of electromechanical properties, as well as high thermal resistivity of the elastic, dielectric, and piezoelectric properties, suggest that AlN single crystals are a promising candidate for high-temperature piezoelectric sensing applications.

Lightning arrestor connector lead magnesium niobate qualification pellet test procedures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tuohig, W.; Mahoney, Patrick A.; Tuttle, Bruce Andrew

2009-02-01

Enhanced knowledge preservation for DOE DP technical component activities has recently received much attention. As part of this recent knowledge preservation effort, improved documentation of the sample preparation and electrical testing procedures for lead magnesium niobate--lead titanate (PMN/PT) qualification pellets was completed. The qualification pellets are fabricated from the same parent powders used to produce PMN/PT lightning arrestor connector (LAC) granules at HWF&T. In our report, the procedures for fired pellet surface preparation, electrode deposition, electrical testing and data recording are described. The dielectric measurements described in our report are an information only test. Technical reasons for selecting the electrodemore » material, electrode size and geometry are presented. The electrical testing is based on measuring the dielectric constant and dissipation factor of the pellet during cooling from 280 C to 220 C. The most important data are the temperature for which the peak dielectric constant occurs (Curie Point temperature) and the peak dielectric constant magnitude. We determined that the peak dielectric constant for our procedure would be that measured at 1 kHz at the Curie Point. Both the peak dielectric constant and the Curie point parameters provide semi-quantitative information concerning the chemical and microstructural homogeneity of the parent material used for the production of PMN/PT granules for LACs. Finally, we have proposed flag limits for the dielectric data for the pellets. Specifically, if the temperature of the peak dielectric constant falls outside the range of 250 C {+-} 30 C we propose that a flag limit be imposed that will initiate communication between production agency and design agency personnel. If the peak dielectric constant measured falls outside the range 25,000 {+-} 10,000 we also propose that a flag limit be imposed.« less

Dielectric response of branched copper phthalocyanine

NASA Astrophysics Data System (ADS)

Hamam, Khalil J.; Al-Amar, Mohammad M.; Mezei, Gellert; Guda, Ramakrishna; Burns, Clement A.

2017-09-01

The dielectric constant of pressed pellets and thin films of branched copper phthalocyanine (CuPc) was investigated as a function of frequency from 0.1 kHz to 1 MHz and temperature from 20 °C to 100 °C. Surface morphology was studied using a scanning electron microscope. The high-frequency values of the dielectric constant of pellets and thin films are ~3.5 and ~5.8, respectively. The response was only weakly dependent on frequency and temperature. The branched structure of the CuPc molecules helped to cancel out the effects of low-frequency polarization mechanisms. A planar delocalized charge system with two-dimensional localization was found using time-resolved photoluminescence measurements.

Novel Superdielectric Materials: Aqueous Salt Solution Saturated Fabric

PubMed Central

Phillips, Jonathan

2016-01-01

The dielectric constants of nylon fabrics saturated with aqueous NaCl solutions, Fabric-Superdielectric Materials (F-SDM), were measured to be >105 even at the shortest discharge times (>0.001 s) for which reliable data could be obtained using the constant current method, thus demonstrating the existence of a third class of SDM. Hence, the present results support the general theoretical SDM hypothesis, which is also supported by earlier experimental work with powder and anodized foil matrices: Any material composed of liquid containing dissolved, mobile ions, confined in an electrically insulating matrix, will have a very high dielectric constant. Five capacitors, each composed of a different number of layers of salt solution saturated nylon fabric, were studied, using a galvanostat operated in constant current mode. Capacitance, dielectric constant, energy density and power density as a function of discharge time, for discharge times from ~100 s to nearly 0.001 s were recorded. The roll-off rate of the first three parameters was found to be nearly identical for all five capacitors tested. The power density increased in all cases with decreasing discharge time, but again the observed frequency response was nearly identical for all five capacitors. Operational limitations found for F-SDM are the same as those for other aqueous solution SDM, particularly a low maximum operating voltage (~2.3 V), and dielectric “constants” that are a function of voltage, decreasing for voltages higher than ~0.8 V. Extrapolations of the present data set suggest F-SDM could be the key to inexpensive, high energy density (>75 J/cm3) capacitors. PMID:28774037

Facile synthesis of Ni/NiO@GO nanocomposites and its enhanced dielectric constant

NASA Astrophysics Data System (ADS)

Sarkar, S.; Giri, N.; Mondal, A.; Ray, R.

2018-05-01

Ni/NiO embedded Graphene Oxide (GO): Ni/NiO@GO is synthesized by citric acid assisted Pechini-type method. Structural and morphological characterizations are performed by X-ray powdered diffraction (XRD), field emission scanning electron microscopy (FESEM) and tunneling electron microscopy (TEM). Defects in GO sheets are probed by RAMAN spectroscopy. The temperature variation of dielectric constant (ɛR) and dielectric loss (tan δ) are investigated in the temperature range 300 - 400 K. Decoration of GO with Ni/NiO nanoparticles enhances its ɛR by˜55 times. Moreover, its dielectric constant measured at 5 MHz is found to be˜430 times to that of Ni/NiO along with the reduction of dielectric loss by a factor˜0.5. The enhanced dielectric constant makes the composite Ni/NiO@GO a potential candidate for using in ecologically friendly energy storage devices.

Cole-cole analysis and electrical conduction mechanism of N{sup +} implanted polycarbonate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chawla, Mahak; Shekhawat, Nidhi; Aggarwal, Sanjeev, E-mail: write2sa@gmail.com

2014-05-14

In this paper, we present the analysis of the dielectric (dielectric constant, dielectric loss, a.c. conductivity) and electrical properties (I–V characteristics) of pristine and nitrogen ion implanted polycarbonate. The samples of polycarbonate were implanted with 100 keV N{sup +} ions with fluence ranging from 1 × 10{sup 15} to 1 × 10{sup 17} ions cm{sup −2}. The dielectric measurements of these samples were performed in the frequency range of 100 kHz to 100 MHz. It has been observed that dielectric constant decreases whereas dielectric loss and a.c. conductivity increases with increasing ion fluence. An analysis of real and imaginary parts of dielectric permittivity has beenmore » elucidated using Cole-Cole plot of the complex permittivity. With the help of Cole-Cole plot, we determined the values of static dielectric constant (ε{sub s}), optical dielectric constant (ε{sub ∞}), spreading factor (α), average relaxation time (τ{sub 0}), and molecular relaxation time (τ). The I–V characteristics were studied using Keithley (6517) electrometer. The electrical conduction behaviour of pristine and implanted polycarbonate specimens has been explained using various models of conduction.« less

A Variational Statistical-Field Theory for Polar Liquid Mixtures

NASA Astrophysics Data System (ADS)

Zhuang, Bilin; Wang, Zhen-Gang

Using a variational field-theoretic approach, we derive a molecularly-based theory for polar liquid mixtures. The resulting theory consists of simple algebraic expressions for the free energy of mixing and the dielectric constant as functions of mixture composition. Using only the dielectric constants and the molar volumes of the pure liquid constituents, the theory evaluates the mixture dielectric constants in good agreement with the experimental values for a wide range of liquid mixtures, without using adjustable parameters. In addition, the theory predicts that liquids with similar dielectric constants and molar volumes dissolve well in each other, while sufficient disparity in these parameters result in phase separation. The calculated miscibility map on the dielectric constant-molar volume axes agrees well with known experimental observations for a large number of liquid pairs. Thus the theory provides a quantification for the well-known empirical ``like-dissolves-like'' rule. Bz acknowledges the A-STAR fellowship for the financial support.

Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

NASA Astrophysics Data System (ADS)

Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

2005-05-01

The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 °C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 °C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 °C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 °C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 °C) shows <110> preferred orientation, while the film deposited at 330 °C with the 10 nm initial layer shows a <111> preferred orientation on a <001>-oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 °C.

Molten salt synthesis of nanocrystalline phase of high dielectric constant material CaCu3Ti4O12.

PubMed

Prakash, B Shri; Varma, K B R

2008-11-01

Nanocrystalline powders of giant dielectric constant material, CaCu3Ti4O12 (CCTO), have been prepared successfully by the molten salt synthesis (MSS) using KCl at 750 degrees C/10 h, which is significantly lower than the calcination temperature (approximately 1000 degrees C) that is employed to obtain phase pure CCTO in the conventional solid-state reaction route. The water washed molten salt synthesized powder, characterized by X-ray powder diffraction (XRD), Scanning electron microscopy (SEM), and Transmission electron microscopy (TEM) confirmed to be a phase pure CCTO associated with approximately 150 nm sized crystallites of nearly spherical shape. The decrease in the formation temperature/duration of CCTO in MSS method was attributed to an increase in the diffusion rate or a decrease in the diffusion length of reacting ions in the molten salt medium. As a consequence of liquid phase sintering, pellets of as-synthesized KCl containing CCTO powder exhibited higher sinterability and grain size than that of KCl free CCTO samples prepared by both MSS method and conventional solid-state reaction route. The grain size and the dielectric constant of KCl containing CCTO ceramics increased with increasing sintering temperature (900 degrees C-1050 degrees C). Indeed the dielectric constants of these ceramics were higher than that of KCl free CCTO samples prepared by both MSS method and those obtained via the solid-state reaction route and sintered at the same temperature. Internal barrier layer capacitance (IBLC) model was invoked to correlate the observed dielectric constant with the grain size in these samples.

Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for AdvancedCMOS Devices

PubMed Central

Suzuki, Masamichi

2012-01-01

A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO3) high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO3 as compared with Hf-based high-k materials is the thermal stability at the interface with Si, which suppresses the formation of a low-permittivity Si oxide interfacial layer. Careful selection of the film deposition conditions has enabled successful deposition of an LaAlO3 gate dielectric film with an equivalent oxide thickness (EOT) of 0.31 nm. Direct contact with Si has been revealed to cause significant tensile strain to the Si in the interface region. The high stability of the effective work function with respect to the annealing conditions has been demonstrated through comparison with Hf-based dielectrics. It has also been shown that the effective work function can be tuned over a wide range by controlling the La/(La + Al) atomic ratio. In addition, gate-first n-MOSFETs with ultrathin EOT that use sulfur-implanted Schottky source/drain technology have been fabricated using a low-temperature process. PMID:28817057

Real Space Imaging of the Microscopic Origins of the Ultrahigh Dielectric Constant in Polycrystalline CaCu 3Ti 4O 12

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalinin, Sergei V; Shin, Junsoo; Veith, Gabriel M

2005-01-01

The origins of an ultrahigh dielectric constant in polycrystalline CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) were studied using the combination of impedance spectroscopy, electron microscopy, and scanning probe microscopy (SPM). Impedance spectra indicate that the transport properties in the 0.1 Hz-1 MHz frequency range are dominated by a single parallel resistive-capacitive (RC) element with a characteristic relaxation frequency of 16 Hz. dc potential distributions measurements by SPM illustrate that significant potential drops occur at the grain boundaries, which thus can be unambiguously identified as the dominant RC element. High frequency ac amplitude and phase distributions illustrate very weak grain boundary contrastmore » in SPM, indicative of strong capacitive coupling across the interfaces. These results demonstrate that the ultrahigh dielectric constant reported for polycrystalline CCTO materials is related to grain-boundary behavior.« less

CMUTs with high-K atomic layer deposition dielectric material insulation layer.

PubMed

Xu, Toby; Tekes, Coskun; Degertekin, F

2014-12-01

Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Six)Ny)) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2) such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD Six)Ny) and 100-nm HfO2) insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure.

Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

PubMed Central

Heo, Jae Sang; Choi, Seungbeom; Jo, Jeong-Wan; Kang, Jingu; Park, Ho-Hyun; Kim, Yong-Hoon; Park, Sung Kyu

2017-01-01

In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL) can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm2/Vs were achieved (maximum mobility of 24 cm2/Vs). Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric. PMID:28772972

Physical and electrical properties of SrTiO3 and SrZrO3

NASA Astrophysics Data System (ADS)

Fashren Muhamad, Norhizatol; Aina Maulat Osman, Rozana; Sobri Idris, Mohd; Yasin, Mohd Najib Mohd

2017-11-01

Perovskite type oxide strontium titanate (SrTiO3) and strontium zirconate (SrZrO3) ceramic powder has been synthesized using conventional solid state reaction method. The powders were mixed and ground undergone calcinations at 1400°C for 12 h and sintered at 1550°C for 5h. X-ray Diffraction exposes physical properties SrTiO3 which exhibit cubic phase (space group: pm-3m) at room temperature meanwhile SrZrO3 has Orthorhombic phase (space group: pnma). The electrical properties such as dielectric constant (ɛr), dielectric loss (tan δ), and conductivity (σ) were studied in variation temperature and frequency. High dielectric constant of SrTiO3 and SrZrO3 were observed at 10 kHz for both samples about 240 and 21 respectively at room temperature. The dielectric loss of SrTiO3 and SrZrO3 is very low loss value approximately 0.00076 and 0.67512 indicates very good dielectric.

Molecular dynamics studies of a DNA-binding protein: 2. An evaluation of implicit and explicit solvent models for the molecular dynamics simulation of the Escherichia coli trp repressor.

PubMed Central

Guenot, J.; Kollman, P. A.

1992-01-01

Although aqueous simulations with periodic boundary conditions more accurately describe protein dynamics than in vacuo simulations, these are computationally intensive for most proteins. Trp repressor dynamic simulations with a small water shell surrounding the starting model yield protein trajectories that are markedly improved over gas phase, yet computationally efficient. Explicit water in molecular dynamics simulations maintains surface exposure of protein hydrophilic atoms and burial of hydrophobic atoms by opposing the otherwise asymmetric protein-protein forces. This properly orients protein surface side chains, reduces protein fluctuations, and lowers the overall root mean square deviation from the crystal structure. For simulations with crystallographic waters only, a linear or sigmoidal distance-dependent dielectric yields a much better trajectory than does a constant dielectric model. As more water is added to the starting model, the differences between using distance-dependent and constant dielectric models becomes smaller, although the linear distance-dependent dielectric yields an average structure closer to the crystal structure than does a constant dielectric model. Multiplicative constants greater than one, for the linear distance-dependent dielectric simulations, produced trajectories that are progressively worse in describing trp repressor dynamics. Simulations of bovine pancreatic trypsin were used to ensure that the trp repressor results were not protein dependent and to explore the effect of the nonbonded cutoff on the distance-dependent and constant dielectric simulation models. The nonbonded cutoff markedly affected the constant but not distance-dependent dielectric bovine pancreatic trypsin inhibitor simulations. As with trp repressor, the distance-dependent dielectric model with a shell of water surrounding the protein produced a trajectory in better agreement with the crystal structure than a constant dielectric model, and the physical properties of the trajectory average structure, both with and without a nonbonded cutoff, were comparable. PMID:1304396

Giant dielectric constant dominated by Maxwell-Wagner relaxation in Al{sub 2}O{sub 3}/TiO{sub 2} nanolaminates synthesized by atomic layer deposition.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, W.; Auciello, O.; Premnath, R. N.

2010-01-01

Nanolaminates consisting of Al{sub 2}O{sub 3} and TiO{sub 2} oxide sublayers were synthesized by using atomic layer deposition to produce individual layers with atomic scale thickness control. The sublayer thicknesses were kept constant for each multilayer structure, and were changed from 50 to 0.2 nm for a series of different samples. Giant dielectric constant ({approx}1000) was observed when the sublayer thickness is less than 0.5 nm, which is significantly larger than that of Al{sub 2}O{sub 3} and TiO{sub 2} dielectrics. Detailed investigation revealed that the observed giant dielectric constant is originated from the Maxwell-Wagner type dielectric relaxation.

Robust nanogenerators based on graft copolymers via control of dielectrics for remarkable output power enhancement

PubMed Central

Lee, Jae Won; Cho, Hye Jin; Chun, Jinsung; Kim, Kyeong Nam; Kim, Seongsu; Ahn, Chang Won; Kim, Ill Won; Kim, Ju-Young; Kim, Sang-Woo; Yang, Changduk; Baik, Jeong Min

2017-01-01

A robust nanogenerator based on poly(tert-butyl acrylate) (PtBA)–grafted polyvinylidene difluoride (PVDF) copolymers via dielectric constant control through an atom-transfer radical polymerization technique, which can markedly increase the output power, is demonstrated. The copolymer is mainly composed of α phases with enhanced dipole moments due to the π-bonding and polar characteristics of the ester functional groups in the PtBA, resulting in the increase of dielectric constant values by approximately twice, supported by Kelvin probe force microscopy measurements. This increase in the dielectric constant significantly increased the density of the charges that can be accumulated on the copolymer during physical contact. The nanogenerator generates output signals of 105 V and 25 μA/cm2, a 20-fold enhancement in output power, compared to pristine PVDF–based nanogenerator after tuning the surface potential using a poling method. The markedly enhanced output performance is quite stable and reliable in harsh mechanical environments due to the high flexibility of the films. On the basis of these results, a much faster charging characteristic is demonstrated in this study. PMID:28560339

Unique dielectric tunability of Pb0.99[(Zr0.6Sn0.4)0.94Ti0.06]0.98Nb0.02O3 antiferroelectric ceramics

NASA Astrophysics Data System (ADS)

Li, Lei; Spreitzer, Matjaž; Suvorov, Danilo; Chen, Xiang Ming

2016-08-01

The tunable dielectric properties of Pb0.99[(Zr0.6Sn0.4)0.94Ti0.06]0.98Nb0.02O3 antiferroelectric ceramics were investigated, and high relative tunability of 49% was obtained at 25 °C under a low bias electric field of 50 kV/cm. Abrupt changes and a significant hysteresis in dielectric constant and dielectric loss against bias electric field were observed, which are very different from the previously reported antiferroelectric materials. The unique dielectric tunability is attributed to the square-shaped double hysteresis loop and indicates the possible applications in some special tunable devices, such as an electrically-controlled switch. Pb0.99[(Zr0.6Sn0.4)0.94Ti0.06]0.98Nb0.02O3 ceramics also exhibit unique dielectric tunability at -5 °C. Abrupt changes in dielectric constant and dielectric loss were observed when the bias electric field increased to 31 kV/cm for the fresh sample, which is similar to the antiferroelectric-like dielectric tunability at 25 °C. However, the dielectric tunability was ferroelectric-like in the following measurement. This response is consistent with the hysteresis loop and can be explained by the electric field-assisted irreversible antiferroelectric-ferroelectric phase transition.

Development of advanced polymer nanocomposite capacitors

NASA Astrophysics Data System (ADS)

Mendoza, Miguel

The current development of modern electronics has driven the need for new series of energy storage devices with higher energy density and faster charge/discharge rate. Batteries and capacitors are two of the most widely used energy storage devices. Compared with batteries, capacitors have higher power density and significant higher charge/discharge rate. Therefore, high energy density capacitors play a significant role in modern electronic devices, power applications, space flight technologies, hybrid electric vehicles, portable defibrillators, and pulse power applications. Dielectric film capacitors represent an exceptional alternative for developing high energy density capacitors due to their high dielectric constants, outstanding breakdown voltages, and flexibility. The implementation of high aspect ratio dielectric inclusions such as nanowires into polymer capacitors could lead to further enhancement of its energy density. Therefore, this research effort is focused on the development of a new series of dielectric capacitors composed of nanowire reinforced polymer matrix composites. This concept of nanocomposite capacitors combines the extraordinary physical and chemical properties of the one-dimension (1D) nanoceramics and high dielectric strength of polymer matrices, leading to a capacitor with improved dielectric properties and energy density. Lead-free sodium niobate (NaNbO3) and lead-containing lead magnesium niobate-lead titanate (0.65PMN-0.35PT) nanowires were synthesized following hydrothermal and sol-gel approaches, respectively. The as-prepared nanowires were mixed with a polyvinylidene fluoride (PVDF) matrix using solution-casting method for nanocomposites fabrication. The dielectric constants and breakdown voltages of the NaNbO3/PVDF and 0.65PMN-0.35PT/PVDF nanocomposites were measured under different frequency ranges and temperatures in order to determine their maximum energy (J/cm3) and specific (J/g) densities. The electrical properties of the synthesized nanoceramics were compared with commercially available barium titanate (BaTiO3) and lead zirconate titanate Pb(ZrxTi1-x)O3 powders embedded into a PVDF matrix. The resulting dielectric film capacitors represent an excellent alternative energy storage device for future high energy density applications.

Microstructures and dielectric properties of CaCu3Ti4O12 ceramics via combustion method

NASA Astrophysics Data System (ADS)

Yuan, W. X.; Li, Z. J.

2012-01-01

CaCu3Ti4O12 (CCTO) powder was synthesized by the combustion method. The effect of sintering temperature was studied on dielectric properties of the prepared ceramic samples. They have the dielectric constant of ~31 000 and 80 000 for the grain size of 0.3 and 30-100 μm. It is unusual for CCTO with a grain size of 0.3 μm to have a dielectric constant of ~31 000. Their giant dielectric constant could be explained by a two-step internal-barrier-layer-capacitor model, associated with grain boundaries and domain boundaries. The existence of domain boundaries helped to explain the contradiction of the dielectric mechanisms between polycrystalline and single-crystal CCTO.

Dielectric and Excess Properties of Glycols with Formamide Binary Mixtures at Different Temperatures

NASA Astrophysics Data System (ADS)

Navarkhele, V. V.

2018-07-01

Dielectric constant measurements of glycol-formamide binary solutions with various concentrations have been carried out at different temperatures. The dielectric measurement has been achieved at 100 MHz frequency using a sensor which is based on frequency domain reflectomery technique. The excess dielectric constant, Kirkwood correlation factor and Bruggeman factor has also been reported for the binary mixtures. The results show that the dielectric constant of the mixtures increases with increase in the volume fraction of formamide and decreases with increase in temperature. The study also confirms the presence of intermolecular interaction, hydrogen bonding and orientation of the dipoles in the binary mixtures.

Room-temperature magnetoelectric multiferroic thin films and applications thereof

DOEpatents

Katiyar, Ram S; Kuman, Ashok; Scott, James F.

2014-08-12

The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

Dielectric and Raman spectroscopy of TlSe thin films

NASA Astrophysics Data System (ADS)

Ozel, Aysen E.; Deger, Deniz; Celik, Sefa; Yakut, Sahin; Karabak, Binnur; Akyüz, Sevim; Ulutas, Kemal

2017-12-01

In this report, the results of Dielectric and Raman spectroscopy of TlSe thin films are presented. The films were deposited in different thicknesses ranging from 290 Å to 3200 Å by thermal evaporation method. The relative permittivity (dielectric constant εr‧) and dielectric loss (εr″) of TlSe thin films were calculated by measuring capacitance (C) and dielectric loss factor (tan δ) in the frequencies ranging between 10-2 Hz-107 Hz and in the temperature ranging between 173 K and 433 K. In the given intervals, both the dielectric constant and the dielectric loss of TlSe thin films decrease with increasing frequency, but increase with increasing temperature. This behavior can be explained as multicomponent polarization in the structure. The ac conductivity obeys the ωs law when s (s < 1). The dielectric constant of TlSe thin films is determined from Dielectric and Raman spectroscopy measurements. The results obtained by two different methods are in agreement with each other.

Controlling Chain Conformations of High-k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors.

PubMed

Adhikari, Jwala M; Gadinski, Matthew R; Li, Qi; Sun, Kaige G; Reyes-Martinez, Marcos A; Iagodkine, Elissei; Briseno, Alejandro L; Jackson, Thomas N; Wang, Qing; Gomez, Enrique D

2016-12-01

A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films.

PubMed

Tierno, Davide; Dekkers, Matthijn; Wittendorp, Paul; Sun, Xiao; Bayer, Samuel C; King, Seth T; Van Elshocht, Sven; Heyns, Marc; Radu, Iuliana P; Adelmann, Christoph

2018-05-01

The microwave dielectric properties of (Ba 0.1 Pb 0.9 )(Zr 0.52 Ti 0.48 )O 3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films.

Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides.

PubMed

Zeng, Qingfeng; Oganov, Artem R; Lyakhov, Andriy O; Xie, Congwei; Zhang, Xiaodong; Zhang, Jin; Zhu, Qiang; Wei, Bingqing; Grigorenko, Ilya; Zhang, Litong; Cheng, Laifei

2014-02-01

High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with first-principles calculations and the global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2 and HfO2, some of which correspond to known phases and some of which are new. The results allow us to propose characteristics (genes) common to high-fitness structures--these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2-SiO2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue for discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery.

Frequency and temperature dependence of dielectric and ac electrical properties of NiFe2O4-ZnO multiferroic nanocomposite

NASA Astrophysics Data System (ADS)

Dutta, Papia; Mandal, S. K.; Dey, P.; Nath, A.

2018-04-01

We have presented the ac electrical properties and dielectric studies of 0.5 NiFe2O4 - 0.5 ZnO multiferroic nanocomposites prepared through low temperature "pyrophoric reaction process". Structural characterization has been carried out through X-ray diffraction technique, which shows the co-existence of both the phases of the nanocomposites. The ac electrical properties of nanocomposites have been studied employing impedance spectroscopy technique. The impedance value is found to increase with increase in magnetic field attributing the magnetostriction property of the composites. Dielectric constant is found to decrease with both the increase in magnetic fields and temperatures. Studies of dielectric constant reveal the Maxwell Wagner interfacial polarization at low frequency regime. Relaxation frequency as a function of magnetic fields and temperatures is found to shift towards the high frequency region.

Study of multi-functionality of lanthanum ferrite (LaFeO{sub 3})

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaikwad, Vishwajit M.; Uikey, Pankaj; Acharya, Smita A., E-mail: saha275@yahoo.com

2015-06-24

In the present work, multifunctional behaviors of LaFeO{sub 3} (LFO) are investigated by studying its dielectric and photocatalytic properties, respectively. LFO is synthesized by microwave-assisted co-precipitation route. Orthorhombic structure is confirmed by X-ray diffraction (XRD) and data is well fitted using Rietveld refinement by Full-Prof suite. Frequency and Temperature dependence dielectric behavior are systematically studied. The dielectric constant of LFO was found to be 2500 – 3000 with dissipation factor less than 5%. Photodegradation of toxic dye (Methylene Blue) using as-prepared LFO is also investigated. UV-visible absorption spectra are used to study the photodegradation behaviour. Photodegradation of methylene blue (MB)more » taken from textile industries by LFO are reported. The colossal value of dielectric constant of LFO exhibits high potential to use as room temperature capacitive component for device miniaturization in microelectronics as well as photodegradation ability shows good photocatalyst.« less

Grain size dependence of dielectric relaxation in cerium oxide as high-k layer

PubMed Central

2013-01-01

Cerium oxide (CeO2) thin films used liquid injection atomic layer deposition (ALD) for deposition and ALD procedures were run at substrate temperatures of 150°C, 200°C, 250°C, 300°C, and 350°C, respectively. CeO2 were grown on n-Si(100) wafers. Variations in the grain sizes of the samples are governed by the deposition temperature and have been estimated using Scherrer analysis of the X-ray diffraction patterns. The changing grain size correlates with the changes seen in the Raman spectrum. Strong frequency dispersion is found in the capacitance-voltage measurement. Normalized dielectric constant measurement is quantitatively utilized to characterize the dielectric constant variation. The relationship extracted between grain size and dielectric relaxation for CeO2 suggests that tuning properties for improved frequency dispersion can be achieved by controlling the grain size, hence the strain at the nanoscale dimensions. PMID:23587419

A facile growth mechanism, structural, optical, dielectric and electrical properties of ZnSe nanosphere via hydrothermal process

NASA Astrophysics Data System (ADS)

Javed, Qurat-Ul-Ain; Baqi, Sabah; Abbas, Hussain; Bibi, Maryam

2017-02-01

Hydrothermal method was chosen as a convenient method to fabricate zinc selenide (ZnSe) nanoparticle materials. The prepared nanospheres were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), where its different properties were observed using UV-visible spectroscopy and LCR meter. It was found that the pure ZnSe nanoparticles have a Zinc blende structure with crystallite size 10.91 nm and in a spherical form with average diameter of 35 nm (before sonication) and 18 nm (after sonication) with wide band gap of 4.28 eV. It was observed that there is inverse relation of frequency with dielectric constant and dielectric loss while AC conductivity grows up by increasing frequency. Such nanostructures were determined to be effectively used in optoelectronic devices as UV detector and in those devices where high-dielectric constant materials are required.

Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics

PubMed Central

2017-01-01

We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport. PMID:28084725

Quantum-dot size and thin-film dielectric constant: precision measurement and disparity with simple models.

PubMed

Grinolds, Darcy D W; Brown, Patrick R; Harris, Daniel K; Bulovic, Vladimir; Bawendi, Moungi G

2015-01-14

We study the dielectric constant of lead sulfide quantum dot (QD) films as a function of the volume fraction of QDs by varying the QD size and keeping the ligand constant. We create a reliable QD sizing curve using small-angle X-ray scattering (SAXS), thin-film SAXS to extract a pair-distribution function for QD spacing, and a stacked-capacitor geometry to measure the capacitance of the thin film. Our data support a reduced dielectric constant in nanoparticles.

Effect of Cold Temperature on the Dielectric Constant of Soil

DTIC Science & Technology

2012-04-01

explosive device (IED) threats is ground-penetrating radar ( GPR ). Proper development of GPR technology for this application requires a unique...success or failure of GPR as a detection technique. One soil property of interest to radar engineers is the dielectric constant. Previous...results to temperatures, moisture levels, and frequencies relevant to GPR systems. 2. Dielectric Constant and the Ring-resonator Concept The two

In-situ GPR test for three-dimensional mapping of the dielectric constant in a rock mass

NASA Astrophysics Data System (ADS)

Elkarmoty, Mohamed; Colla, Camilla; Gabrielli, Elena; Papeschi, Paolo; Bonduà, Stefano; Bruno, Roberto

2017-11-01

The Ground Penetrating Radar (GPR) is used to detect subsurface anomalies in several applications. The more the velocity of propagation or the dielectric constant is estimated accurately, the more the detection of anomalies at true subsurface depth can be accurately obtained. Since many GPR applications are performed in rock mass with non-homogeneous discontinuous nature, errors in estimating a bulk velocity of propagation or dielectric constant are possible. This paper presents a new in-situ GPR test for mapping the dielectric constant variability in a rock mass. The main aim is to investigate to what extent the dielectric constant is variable in the micro and macro scale of a typical rock mass and to give attention to GPR users in rock mass mediums. The methodology of this research is based on the insertion of steel rods in a rock mass, thus acting as reflectors. The velocity of propagation can be then modeled, from hyperbolic reflections, in the form of velocity pathways from antenna positions to a buried rod. Each pathway is characterized by discrete points which are assumed in three dimensions as centers of micro cubic rock mass. This allows converting the velocity of propagation into a dielectric constant for mapping and modeling the dielectric constant in a volumetric rock mass using a volumetric data visualization software program (Voxler). In a case study, 6 steel drilling rods were diagonally inserted in a vertical face of a bench in a sandstone quarry. Five equally spaced parallel lines, almost perpendicular to the orientations of the rods, were surveyed by a dual frequency GPR antenna of 200 and 600 MHz. The results show that the dielectric constant is randomly varied within the micro and macro scale either in single radargrams or in the volumetric rock mass. The proposed method can be useful if considered in signal processing software programs, particularly in presence of subsurface utilities with known geometry and dimension, allowing converting double travel time, through portions of a radargram, into more reliable depths using discrete dielectric constant values instead of one value for a whole radargram.

Copper drift in high-dielectric-constant tantalum oxide thin films under bias temperature stress

NASA Astrophysics Data System (ADS)

Jain, Pushkar; Juneja, Jasbir S.; Mallikarjunan, A.; Rymaszewski, E. J.; Lu, T.-M.

2006-04-01

The use of high-dielectric-constant (high-κ) materials for embedded capacitors is becoming increasingly important. Tantalum oxide (Ta2O5) is a prominent candidate as a high-κ material for embedded capacitor use. Metal drift in Ta2O5 (κ˜25) was investigated by bias temperature stress and triangular voltage sweep testing techniques on metal/Ta2O5/SiO2/Si structures. At a temperature of 300°C and 0.75MV/cm bias conditions, Al, Ta, and Ti do not diffuse in Ta2O5, but Cu clearly showed a drift. The Cu drift is attributed to the lack of a stable Cu oxide which can limit Cu ion generation and penetration.

Dielectric relaxation of barium strontium titanate and application to thin films for DRAM capacitors

NASA Astrophysics Data System (ADS)

Baniecki, John David

This thesis examines the issues associated with incorporating the high dielectric constant material Barium Strontium Titanate (BSTO) in to the storage capacitor of a dynamic random access memory (DRAM). The research is focused on two areas: characterizing and understanding the factors that control charge retention in BSTO thin films and modifying the electrical properties using ion implantation. The dielectric relaxation of BSTO thin films deposited by metal-organic chemical vapor deposition (MOCVD) is investigated in the time and frequency domains. It is shown that the frequency dispersion of the complex capacitance of BSTO thin films can be understood in terms of a power-law frequency dependence from 1mHz to 20GHz. From the correspondence between the time and frequency domain measurements, it is concluded that the power-law relaxation currents extend back to the nano second regime of DRAM operation. The temperature, field, and annealing dependence of the dielectric relaxation currents are also investigated and mechanisms for the observed power law relaxation are explored. An equivalent circuit model of a high dielectric constant thin film capacitor is developed based on the electrical measurements and implemented in PSPICE. Excellent agreement is found between the experimental and simulated electrical characteristics showing the utility of the equivalent circuit model in simulating the electrical properties of high dielectric constant thin films. Using the equivalent circuit model, it is shown that the greatest charge loss due to dielectric relaxation occurs during the first read after a refresh time following a write to the opposite logic state for a capacitor that has been written to the same logic state for a long time (opposite state write charge loss). A theoretical closed form expression that is a function of three material parameters is developed which estimates the opposite state write charge loss due to dielectric relaxation. Using the closed form expression, and BSTO thin film electrical characteristics, the charge loss due to dielectric relaxation is estimated to be 6--12% of the initial charge stored on the capacitor plates for MOCVD BSTO thin films with Pt electrodes after a post top electrode anneal in oxygen. In contrast, it is shown that the charge loss due to steady state leakage is only 0.0125--0.125% of the initial charge stored on the capacitor plates. Charge retention is shown to depend strongly on the annealing conditions. Annealing MOCVD BSTO thin films with Pt electrodes in forming gas (95% Ar 5% H2) increases charge loss due to dielectric relaxation to as much as 60%. Ion implantation is used to dope BSTO thin films with Mn. X-ray diffraction and transmission electron microscopy (TEM) shows ion implantation significantly damages the film leaving only short-range order, but post-implant annealing heals the damage. Capacitance recovery after post-implant annealing is as high as 94% for 15 nm BSTO films. At low implant doses, the Mn doped films have substantially lower leakage (up to a factor of ten lower) and only slightly higher relaxation currents and dielectric loss indicating that ion implantation may be a potentially viable way of introducing dopants into high dielectric constant thin films for future DRAM applications.

Dielectric and structural properties of aqueous nonpolar solute mixtures.

PubMed

Shvab, I; Sadus, Richard J

2012-09-28

The dielectric properties and molecular structure of water mixtures with different nonpolar solutes (methane and noble gases) are studied using molecular dynamics. The water-water, water-solute, and solute-solute interactions are calculated using the combination of a polarizable potential [J. Li, Z. Zhou, and R. J. Sadus, J. Chem. Phys. 127, 154509 (2007)] for water plus the Lennard-Jones potential. The effect of solute size and concentration on the solubility of the system, hydrogen bonding, dielectric constant, and dipole moment are investigated over a temperature range of 278-750 K and solute percentage mole fractions up to 30%. Solute particles affect the structure of water, resulting in the compression of oxygen-oxygen and oxygen-hydrogen radial distribution functions. The influence of the solute extends both to relatively low concentrations and high temperatures. The coordination numbers of aqueous solutions of the nonpolar solutes appear to be proportional to the size of the solute particles. Our study shows the destructive influence of the nonpolar solute on both the tetrahedral water structure and hydrogen bond formation at solute concentrations greater than 30%. The presence of nonpolar particles typically decreases both the dielectric constant and dipole moment. The decrease of dielectric constant and water dipole moment is directly proportional to the solute concentration and temperature.

Epoxy-based broadband antireflection coating for millimeter-wave optics.

PubMed

Rosen, Darin; Suzuki, Aritoki; Keating, Brian; Krantz, William; Lee, Adrian T; Quealy, Erin; Richards, Paul L; Siritanasak, Praween; Walker, William

2013-11-20

We have developed epoxy-based, broadband antireflection coatings for millimeter-wave astrophysics experiments with cryogenic optics. By using multiple-layer coatings where each layer steps in dielectric constant, we achieved low reflection over a wide bandwidth. We suppressed the reflection from an alumina disk to 10% over fractional bandwidths of 92% and 104% using two-layer and three-layer coatings, respectively. The dielectric constants of epoxies were tuned between 2.06 and 7.44 by mixing three types of epoxy and doping with strontium titanate powder required for the high dielectric mixtures. At 140 K, the band-integrated absorption loss in the coatings was suppressed to less than 1% for the two-layer coating, and below 10% for the three-layer coating.

Transport characteristics and colossal dielectric response of cadmium sulfide nanoparticles

NASA Astrophysics Data System (ADS)

Ahmad, Mushtaq; Rafiq, M. A.; Hasan, M. M.

2013-10-01

We report here the synthesis of ˜20 nm sized cadmium sulfide (CdS) nanoparticles via conventional solid state reaction at low temperature ˜200 °C and ambient pressure. X-ray diffraction and high resolution transmission electron microscopy analysis confirmed the synthesis of hexagonal phased nanoparticles. Impedance and electrical modulus investigations were carried out in the frequency range 20 Hz to 2 MHz and at temperature from 300 K to 400 K, which show the presence of bulk, grain boundary, and sub-grain boundary phases in CdS nanoparticles. Overlapped large polaron tunneling was the observed mechanism of charge carriers in used temperature range. The presence of colossal dielectric constant in the system is attributed to the Maxwell-Wagner type polarization. High and temperature dependent dielectric constants make the CdS nanoparticles efficient material to be used in capacitive energy storage devices.

Molecular dynamics simulations to study the solvent influence on protein structure

NASA Astrophysics Data System (ADS)

Dominguez, Hector

2016-05-01

Molecular simulations were carried out to study the influence of different water models in two protein systems. Most of the solvents used in protein simulations, e.g., SPC/E or TIP3P, fail to reproduce the bulk water static dielectric constant. Recently a new water model, TIP4P/ɛ, which reproduces the experimental dielectric constant was reported. Therefore, simulations for two different proteins, Lysozyme and Ubiquitin with SPC/E, TIP3P and TIP4P/ɛ solvents were carried out. Dielectric constants and structural properties were calculated and comparisons were conducted. The structural properties between the three models are very similar, however, the dielectric constants are different in each case.

PLZT capacitor and method to increase the dielectric constant

DOEpatents

Taylor, Ralph S.; Fairchild, Manuel Ray; Balachjandran, Uthamalingam; Lee, Tae H.

2017-12-12

A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300.degree. C.

Let's Measure the Dielectric Constant of a Piece of Paper!

ERIC Educational Resources Information Center

Karlow, Edwin A.

1991-01-01

Described is a simple circuit with which students can observe the effect of common dielectric materials in a capacitor and measure the dielectric constant of a piece of paper. Discussed are the theory, apparatus construction, and experimental procedures for this activity. (CW)

Quantification of the dielectric constant of single non-spherical nanoparticles from polarization forces: eccentricity effects.

PubMed

Gomila, G; Esteban-Ferrer, D; Fumagalli, L

2013-12-20

We analyze by means of finite-element numerical calculations the polarization force between a sharp conducting tip and a non-spherical uncharged dielectric nanoparticle with the objective of quantifying its dielectric constant from electrostatic force microscopy (EFM) measurements. We show that for an oblate spheroid nanoparticle of given height the strength of the polarization force acting on the tip depends linearly on the eccentricity, e, of the nanoparticle in the small eccentricity and low dielectric constant regimes (1 < e < 2 and 1 < ε(r) < 10), while for higher eccentricities (e > 2) the dependence is sub-linear and finally becomes independent of e for very large eccentricities (e > 30). These results imply that a precise account of the nanoparticle shape is required to quantify EFM data and obtain the dielectric constants of non-spherical dielectric nanoparticles. Experimental results obtained on polystyrene, silicon dioxide and aluminum oxide nanoparticles and on single viruses are used to illustrate the main findings.

Molecular Dynamics Evaluation of Dielectric-Constant Mixing Rules for H2O-CO2 at Geologic Conditions

PubMed Central

Mountain, Raymond D.; Harvey, Allan H.

2015-01-01

Modeling of mineral reaction equilibria and aqueous-phase speciation of C-O-H fluids requires the dielectric constant of the fluid mixture, which is not known from experiment and is typically estimated by some rule for mixing pure-component values. In order to evaluate different proposed mixing rules, we use molecular dynamics simulation to calculate the dielectric constant of a model H2O–CO2 mixture at temperatures of 700 K and 1000 K at pressures up to 3 GPa. We find that theoretically based mixing rules that depend on combining the molar polarizations of the pure fluids systematically overestimate the dielectric constant of the mixture, as would be expected for mixtures of nonpolar and strongly polar components. The commonly used semiempirical mixing rule due to Looyenga works well for this system at the lower pressures studied, but somewhat underestimates the dielectric constant at higher pressures and densities, especially at the water-rich end of the composition range. PMID:26664009

Molecular Dynamics Evaluation of Dielectric-Constant Mixing Rules for H2O-CO2 at Geologic Conditions.

PubMed

Mountain, Raymond D; Harvey, Allan H

2015-10-01

Modeling of mineral reaction equilibria and aqueous-phase speciation of C-O-H fluids requires the dielectric constant of the fluid mixture, which is not known from experiment and is typically estimated by some rule for mixing pure-component values. In order to evaluate different proposed mixing rules, we use molecular dynamics simulation to calculate the dielectric constant of a model H 2 O-CO 2 mixture at temperatures of 700 K and 1000 K at pressures up to 3 GPa. We find that theoretically based mixing rules that depend on combining the molar polarizations of the pure fluids systematically overestimate the dielectric constant of the mixture, as would be expected for mixtures of nonpolar and strongly polar components. The commonly used semiempirical mixing rule due to Looyenga works well for this system at the lower pressures studied, but somewhat underestimates the dielectric constant at higher pressures and densities, especially at the water-rich end of the composition range.

Dielectric constant extraction of graphene nanostructured on SiC substrates from spectroscopy ellipsometry measurement using Gauss–Newton inversion method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maulina, Hervin; Santoso, Iman, E-mail: iman.santoso@ugm.ac.id; Subama, Emmistasega

2016-04-19

The extraction of the dielectric constant of nanostructured graphene on SiC substrates from spectroscopy ellipsometry measurement using the Gauss-Newton inversion (GNI) method has been done. This study aims to calculate the dielectric constant and refractive index of graphene by extracting the value of ψ and Δ from the spectroscopy ellipsometry measurement using GNI method and comparing them with previous result which was extracted using Drude-Lorentz (DL) model. The results show that GNI method can be used to calculate the dielectric constant and refractive index of nanostructured graphene on SiC substratesmore faster as compared to DL model. Moreover, the imaginary partmore » of the dielectric constant values and coefficient of extinction drastically increases at 4.5 eV similar to that of extracted using known DL fitting. The increase is known due to the process of interband transition and the interaction between the electrons and electron-hole at M-points in the Brillouin zone of graphene.« less

Quantum confinement and dielectric profiles of colloidal nanoplatelets of halide inorganic and hybrid organic-inorganic perovskites

NASA Astrophysics Data System (ADS)

Sapori, Daniel; Kepenekian, Mikaël; Pedesseau, Laurent; Katan, Claudine; Even, Jacky

2016-03-01

Quantum confinement as well as high frequency ε∞ and static εs dielectric profiles are described for nanoplatelets of halide inorganic perovskites CsPbX3 (X = I, Br, Cl) and hybrid organic-inorganic perovskites (HOP) in two-dimensional (2D) and three-dimensional (3D) structures. 3D HOP are currently being sought for their impressive photovoltaic ability. Prior to this sudden popularity, 2D HOP materials were driving intense activity in the field of optoelectronics. Such developments have been enriched by the recent ability to synthesize colloidal nanostructures of controlled sizes of 2D and 3D HOP. This raises the need to achieve a thorough description of the electronic structure and dielectric properties of these systems. In this work, we go beyond the abrupt dielectric interface model and reach the atomic scale description. We examine the influence of the nature of the halogen and of the cation on the band structure and dielectric constants. Similarly, we survey the effect of dimensionality and shape of the perovskite. In agreement with recent experimental results, we show an increase of the band gap and a decrease of ε∞ when the size of a nanoplatelet reduces. By inspecting 2D HOP, we find that it cannot be described as a simple superposition of independent inorganic and organic layers. Finally, the dramatic impact of ionic contributions on the dielectric constant εs is analysed.Quantum confinement as well as high frequency ε∞ and static εs dielectric profiles are described for nanoplatelets of halide inorganic perovskites CsPbX3 (X = I, Br, Cl) and hybrid organic-inorganic perovskites (HOP) in two-dimensional (2D) and three-dimensional (3D) structures. 3D HOP are currently being sought for their impressive photovoltaic ability. Prior to this sudden popularity, 2D HOP materials were driving intense activity in the field of optoelectronics. Such developments have been enriched by the recent ability to synthesize colloidal nanostructures of controlled sizes of 2D and 3D HOP. This raises the need to achieve a thorough description of the electronic structure and dielectric properties of these systems. In this work, we go beyond the abrupt dielectric interface model and reach the atomic scale description. We examine the influence of the nature of the halogen and of the cation on the band structure and dielectric constants. Similarly, we survey the effect of dimensionality and shape of the perovskite. In agreement with recent experimental results, we show an increase of the band gap and a decrease of ε∞ when the size of a nanoplatelet reduces. By inspecting 2D HOP, we find that it cannot be described as a simple superposition of independent inorganic and organic layers. Finally, the dramatic impact of ionic contributions on the dielectric constant εs is analysed. Electronic supplementary information (ESI) available: Complementary results on the electronic structure and dielectric constants of CsPbX3 and CH3NH3PbX3 (X = I, Br, Cl). See DOI: 10.1039/c5nr07175e

Microwave-Assisted Synthesis of High Dielectric Constant CaCu3Ti4O12 from Sol-Gel Precursor

NASA Astrophysics Data System (ADS)

Ouyang, Xin; Cao, Peng; Huang, Saifang; Zhang, Weijun; Huang, Zhaohui; Gao, Wei

2015-07-01

CaCu3Ti4O12 (CCTO) powders derived from sol-gel precursors were calcined and sintered via microwave radiation. The obtained CCTO powders were compared with that obtained via a conventional heating method. For microwave heating, 89.1 wt.% CCTO was achieved from the sol-gel precursor, after only 17 min at 950°C. In contrast, the conventional calcination method required 3 h to generate 87.6 wt.% CCTO content at 1100°C. In addition, the CCTO powders prepared through 17 min of microwave calcination exhibited a small particle size distribution of D50 = 3.826 μm. It was found that a lengthy hold time of 1 h by microwave sintering is required to obtain a high dielectric constant (3.14 × 103 at 102 Hz) and a reasonably low dielectric loss (0.161) in the sintered CCTO ceramic. Based upon the distinct microstructures, the dielectric responses of the CCTO samples sintered by different methods are attributed to space charge polarization and internal barrier layer capacitor mechanism.

Low-Thermal-Expansion Filled Polytetrafluoroethylene

NASA Technical Reports Server (NTRS)

Shapiro, Sanford S.

1989-01-01

PTFE made thermally compatible with aluminum without changing dielectric constant. Manufactured with fillers and pores to reduce coefficient of thermal expansion by factor of 6 to match aluminum. Material retains 2.1 dielectric constant of pure PTFE. Combines filler and micropore concepts. Particles and voids embedded in PTFE matrix function cooperatively. Particles take up compressive stress imposed by contracting PTFE, and voids take up expanding material. Increases dielectric constant, while voids reduce it.

Plasma polymerized high energy density dielectric films for capacitors

NASA Technical Reports Server (NTRS)

Yamagishi, F. G.

1983-01-01

High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

Processing effects on the microstructure and dielectric properties of hydrothermal barium titanate and (barium,strontium)titanate thin films

NASA Astrophysics Data System (ADS)

McCormick, Mark Alan

The goal of this work was to produce BaTiO3 and BaxSr (1-x)TiO3 (BST) thin films with high dielectric constants, using a low-temperature (<100°C) hydrothermal synthesis route. To accomplish this, titanium metal-organic precursor films were spin-cast onto metal-coated glass substrates and converted to polycrystalline BaTiO3 or BST upon reacting in aqueous solutions of Ba(OH)2 or Ba(OH)2 and Sr(OH)2. The influences of solution molarity, processing temperature, and reaction time on thin film reaction kinetics, microstructure, and dielectric properties were examined for BaTiO3 films. Post-deposition annealing at temperatures as low as 200°C substantially affected the lattice parameter, dielectric constant, and dielectric loss. This behavior is explained in terms of hydroxyl defect incorporation during film formation. Current-voltage (I-V) measurements were performed to determine the dominant conduction mechanism(s) during application of a do field, and to extract the metal/ceramic barrier height. In particular, Schottky barrier-limited conduction and Poole-Frenkel conduction were investigated as potential leakage mechanisms. For BST thin films, film stoichiometry deviated from the initial solution composition, with a preferred incorporation of Sr2+ into the perovskite lattice. The dielectric constant of the BST films was measured as a function of composition (Ba:Sr ratio) and temperature over the range 25--150°C. Finally, capacitance-voltage (C-V) measurements were made for BST films to determine the influence of film composition on dielectric tunability.

Correlations of structural, magnetic, and dielectric properties of undoped and doped CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Krohns, S.; Lu, J.; Lunkenheimer, P.; Brizé, V.; Autret-Lambert, C.; Gervais, M.; Gervais, F.; Bourée, F.; Porcher, É. F.; Loidl, A.

2009-11-01

The present work reports synthesis, as well as a detailed and careful characterization of structural, magnetic, and dielectric properties of differently tempered undoped and doped CaCu3Ti4O12 (CCTO) ceramics. For this purpose, neutron and X-ray powder diffraction, SQUID measurements, and dielectric spectroscopy have been performed. Mn-, Fe-, and Ni-doped CCTO ceramics were investigated in great detail to document the influence of low-level doping with 3d metals on the antiferromagnetic structure and dielectric properties. In the light of possible magnetoelectric coupling in these doped ceramics, the dielectric measurements were also carried out in external magnetic fields up to 7 T. At low temperatures the dielectric constant shows a minor but significant dependence on the applied magnetic field. Undoped CCTO is well-known for its colossal dielectric constant in a broad frequency and temperature range. With the present extended characterization of doped as well as undoped CCTO, we want to address the question why doping with only 1% Mn or 0.5% Fe decreases the room-temperature dielectric constant of CCTO by a factor of ~100 with a concomitant reduction of the conductivity, whereas 0.5% Ni doping changes the dielectric properties only slightly. In addition, diffraction experiments and magnetic investigations were undertaken to check for possible correlations of the magnitude of the colossal dielectric constants with structural details or with magnetic properties like the magnetic ordering, the Curie-Weiss temperatures, or the paramagnetic moment. It is revealed, that while the magnetic ordering temperature and the effective moment of all investigated CCTO ceramics are rather similar, there is a dramatic influence of doping and tempering time on the Curie-Weiss constant.

Viking landing sites, remote-sensing observations, and physical properties of Martian surface materials

USGS Publications Warehouse

Moore, H.J.; Jakosky, B.M.

1989-01-01

Important problems that confront future scientific exploration of Mars include the physical properties of Martian surface materials and the geologic processes that formed the materials. The design of landing spacecraft, roving vehicles, and sampling devices and the selection of landing sites, vehicle traverses, and sample sites will be, in part, guided by the physical properties of the materials. Four materials occur in the sample fields of the Viking landers: (1) drift, (2) crusty to cloddy, (3) blocky, and (4) rock. The first three are soillike. Drift materials is weak, loose, and porous. We estimate that it has a dielectric constant near 2.4 and a thermal inertia near 1 ?? 10-3 to 3 ?? 10-3 (cal cm-2 sec 1 2 K-1) because of its low bulk density, fine grain size, and small cohesion. Crusty to cloddy material is expected to have a dielectric constant near 2.8 and a thermal inertia near 4 ?? 10-3 to 7 ?? 10-3 because of its moderate bulk density and cementation of grains. Blocky material should have a dielectric constant near 3.3 and a thermal inertia near 7 ?? 10-3 to 9 ?? 10-3 because of its moderate bulk density and cementation. Common basaltic rocks have dielectric constans near 8 and thermal inertias near 30 ?? 10-3 to 60 ?? 10-3. Comparisons of estimated dielectric constants and thermal inertias of the materials at the landing sites with those obtained remotely by Earth-based radars and Viking Orbiter thermal sensors suggest that the materials at the landing sites are good analogs for materials elsewhere on Mars. Correlation of remotely estimated dielectric constant and thermal inertias indicates two modal values for paired values of dielectric constants and thermal inertias near (A) 2 and 2 ?? 10-3 and (B) 3 and 6 ?? 10-3, respectively. These two modes are comparable to the dielectric constants and thermal inertias for drift and crusty to cloddy material, respectively. Dielectric constants and thermal inertias for blocky material are larger but conistent with values in the northern plains. Our interprertations are compatible with an aeolian origin for drift and similar materials elsewhere on Mars. The postulate that moderate dielectric constants and thermal inertias larger than 3 or 4 ?? 10-3 are produced by cementation of soillike materials is partly consistent with the data. The average dielectric constant and thermal inertia and their correlation with one another suggest that most of the surface of Mars should present few difficulties to future surface exploration, but some surfaces may present difficulties for spacecraft that are not suitably designed. ?? 1989.

Light induced dielectric constant of Alumina doped lead silicate glass based on silica sands

NASA Astrophysics Data System (ADS)

Diantoro, Markus; Natalia, Desi Ayu; Mufti, Nandang; Hidayat, Arif

2016-04-01

Numerous studies on glass ceramic compounds have been conducted intensively. Two major problems to be solved are to simplify the fabrication process by reducing melting temperature as well as improving various properties for various fields of technological application. To control the dielectric constant, the researchers generally use a specific dopant. So far there is no comprehensive study to control the dielectric constant driven by both of dopant and light intensity. In this study it is used Al2O3 dopant to increase the light induced dielectric constant of the glass. The source of silica was taken from local silica sands of Bancar Tuban. The sands were firstly leached using hydrochloric acid to improve the purity of silica which was investigated by means of XRF. Fabricating the glass samples were performed by using melting-glass method. Silica powder was mixed with various ratio of SiO2:Na2CO3:PbO:Al2O3. Subsequently, a mixture of various Al2O3 doped lead silicate glasses were melted at 970°C and directy continued by annealed at 300°C. The samples were investigated by XRD, FTIR, SEM-EDX and measuring dielectric constant was done using dc-capacitance meter with various light intensities. The investigation result of XRD patterns showed that the crystal structures of the samples are amorphous state. The introduction of Al2O3 does not alter the crystal structure, but significantly change the structure of the functional glass bonding PbO-SiO2 which was shown by the FTIR spectra. It was noted that some new peak peaks were exist in the doped samples. Measuring result of dielectricity shows that the dielectric constant of glass increases with the addition of Al2O3. Increasing the light intensity gives rise to increase their dielectric constant in general. A detail observation of the dielectric seen that there are discontinuous step-like of dielectric. Most likely a specific quantization mechanism occurs when glass exposed under light.

Dielectric non destructive testing for rock characterization in natural stone industry and cultural heritage

NASA Astrophysics Data System (ADS)

López-Buendía, Angel M.; García-Baños, Beatriz; Mar Urquiola, M.; Gutiérrez, José D.; Catalá-Civera, José M.

2016-04-01

Dielectric constant measurement has been used in rocks characterization, mainly for exploration objective in geophysics, particularly related to ground penetration radar characterization in ranges of 10 MHz to 1 GHz. However, few data have been collected for loss factor. Complex permittivity (dielectric constant and loss factor) characterization in rock provide information about mineralogical composition as well as other petrophysic parameters related to the quality, such as fabric parameters, mineralogical distribution, humidity. A study was performed in the frequency of 2,45GHz by using a portable kit for dielectric device based on an open coaxial probe. In situ measurements were made of natural stone marble and granite on selected industrial slabs and building stone. A mapping of their complex permittivity was performed and evaluated, and variations in composition and textures were identified, showing the variability with the mineral composition, metal ore minerals content and fabric. Dielectric constant was a parameter more sensible to rock forming minerals composition, particularly in granites for QAPF-composition (quartz-alkali feldspar-plagioclases-feldspathoids) and in marbles for calcite-dolomite-silicates. Loss factor shown a high sensibility to fabric and minerals of alteration. Results showed that the dielectric properties can be used as a powerful tool for petrographic characterization of building stones in two areas of application: a) in cultural heritage diagnosis to estimate the quality and alteration of the stone, an b) in industrial application for quality control and industrial microwave processing.

Strongly nonlinear composite dielectrics: A perturbation method for finding the potential field and bulk effective properties

NASA Astrophysics Data System (ADS)

Blumenfeld, Raphael; Bergman, David J.

1991-10-01

A class of strongly nonlinear composite dielectrics is studied. We develop a general method to reduce the scalar-potential-field problem to the solution of a set of linear Poisson-type equations in rescaled coordinates. The method is applicable for a large variety of nonlinear materials. For a power-law relation between the displacement and the electric fields, it is used to solve explicitly for the value of the bulk effective dielectric constant ɛe to second order in the fluctuations of its local value. A simlar procedure for the vector potential, whose curl is the displacement field, yields a quantity analogous to the inverse dielectric constant in linear dielectrics. The bulk effective dielectric constant is given by a set of linear integral expressions in the rescaled coordinates and exact bounds for it are derived.

Microwave dielectric properties of boreal forest trees

NASA Technical Reports Server (NTRS)

Xu, G.; Ahern, F.; Brown, J.

1993-01-01

The knowledge of vegetation dielectric behavior is important in studying the scattering properties of the vegetation canopy and radar backscatter modelling. Until now, a limited number of studies have been published on the dielectric properties in the boreal forest context. This paper presents the results of the dielectric constant as a function of depth in the trunks of two common boreal forest species: black spruce and trembling aspen, obtained from field measurements. The microwave penetration depth for the two species is estimated at C, L, and P bands and used to derive the equivalent dielectric constant for the trunk as a whole. The backscatter modelling is carried out in the case of black spruce and the results are compared with the JPL AIRSAR data. The sensitivity of the backscatter coefficient to the dielectric constant is also examined.

CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

PubMed Central

Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

2014-01-01

Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

An improved model for the dielectric constant of sea water at microwave frequencies

NASA Technical Reports Server (NTRS)

Klein, L. A.; Swift, C. T.

1977-01-01

The advent of precision microwave radiometry has placed a stringent requirement on the accuracy with which the dielectric constant of sea water must be known. To this end, measurements of the dielectric constant have been conducted at S-band and L-band with a quoted uncertainty of tenths of a percent. These and earlier results are critically examined, and expressions are developed which will yield computations of brightness temperature having an error of no more than 0.3 K for an undisturbed sea at frequencies lower than X-band. At the higher microwave and millimeter wave frequencies, the accuracy is in question because of uncertainties in the relaxation time and the dielectric constant at infinite frequency.

Enhancing electrical energy storage capability of dielectric polymer nanocomposites via the room temperature Coulomb blockade effect of ultra-small platinum nanoparticles.

PubMed

Wang, Liwei; Huang, Xingyi; Zhu, Yingke; Jiang, Pingkai

2018-02-14

Introducing a high dielectric constant (high-k) nanofiller into a dielectric polymer is the most common way to achieve flexible nanocomposites for electrostatic energy storage devices. However, the significant decrease of breakdown strength and large increase of dielectric loss has long been known as the bottleneck restricting the enhancement of practical energy storage capability of the nanocomposites. In this study, by introducing ultra-small platinum (<2 nm) nanoparticles, high-k polymer nanocomposites with high breakdown strength and low dielectric loss were prepared successfully. Core-shell structured polydopamine@BaTiO 3 (PDA@BT) and core-satellite ultra-small platinum decorated PDA@BT (Pt@PDA@BT) were used as nanofillers. Compared with PDA@BT nanocomposites, the maximum discharged energy density of the Pt@PDA@BT nanocomposites is increased by nearly 70% because of the improved energy storage efficiency. This research provides a simple, promising and unique way to enhance energy storage capability of high-k polymer nanocomposites.

Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

DOEpatents

Auciello, Orlando

2010-05-11

A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

Dielectric properties of calicum and barium-doped strontium titanate

NASA Astrophysics Data System (ADS)

Tung, Li-Chun

Dielectric properties of high quality polycrystalline Ca- and Ba-doped SrTiO3 perovskites are studied by means of dielectric constant, dielectric loss and ferroelectric hysteresis measurements. Low frequency dispersion of the dielectric constant is found to be very small and a simple relaxor model may not be able to explain its dielectric behavior. Relaxation modes are found in these samples, and they are all interpreted as thermally activated Bipolar re-orientation across energy barriers. In Sr1- xCaxTiO3 (x = 0--0.3), two modes are found associated with different relaxation processes, and the concentration dependence implies a competition between these processes. In Sr1-xBa xTiO3 (x = 0--0.25), relaxation modes are found to be related to the structural transitions, and the relaxation modes persist at low doping levels (x < 0.1), where structural ordering is not observed by previous neutron scattering studies. The validity of well-accepted Barret formula is discussed and two of the well-accepted models, anharmonic oscillator model and transverse Ising model, are found to be equivalent. Both of the Ca and Ba systems can be understood qualitatively within the concept of transverse Ising model.

Evaluation of the influence of the internal aqueous solvent structure on electrostatic interactions at the protein-solvent interface by nonlocal continuum electrostatic approach.

PubMed

Rubinstein, Alexander; Sherman, Simon

The dielectric properties of the polar solvent on the protein-solvent interface at small intercharge distances are still poorly explored. To deconvolute this problem and to evaluate the pair-wise electrostatic interaction (PEI) energies of the point charges located at the protein-solvent interface we used a nonlocal (NL) electrostatic approach along with a static NL dielectric response function of water. The influence of the aqueous solvent microstructure (determined by a strong nonelectrostatic correlation effect between water dipoles within the orientational Debye polarization mode) on electrostatic interactions at the interface was studied in our work. It was shown that the PEI energies can be significantly higher than the energies evaluated by the classical (local) consideration, treating water molecules as belonging to the bulk solvent with a high dielectric constant. Our analysis points to the existence of a rather extended, effective low-dielectric interfacial water shell on the protein surface. The main dielectric properties of this shell (effective thickness together with distance- and orientation-dependent dielectric permittivity function) were evaluated. The dramatic role of this shell was demonstrated when estimating the protein association rate constants.

Effects of TiO2 addition on microwave dielectric properties of Li2MgSiO4 ceramics

NASA Astrophysics Data System (ADS)

Rose, Aleena; Masin, B.; Sreemoolanadhan, H.; Ashok, K.; Vijayakumar, T.

2018-03-01

Silicates have been widely studied for substrate applications in microwave integrated circuits owing to their low dielectric constant and low tangent loss values. Li2MgSiO4 (LMS) ceramics are synthesized through solid-state reaction route using TiO2 as an additive to the pure ceramics. Variations in dielectric properties of LMS upon TiO2 addition in different weight percentages (0.5, 1.5, 2) are studied by keeping the sintering parameters constant. Crystalline structure, phase composition, and microstructure of LMS and LMS-TiO2 ceramics were studied using x-ray diffraction spectrometer and High Resolution Scanning electron microscope. Density was measured through Archimedes method and the microwave dielectric properties were examined by Cavity perturbation technique. LMS achieved relative permittivity (ε r) of 5.73 and dielectric loss (tan δ) of 5.897 × 10‑4 at 8 GHz. In LMS-TiO2 ceramics, 0.5 wt% TiO2 added LMS showed comparatively better dielectric properties than other weight percentages where ε r = 5.67, tan δ = 7.737 × 10‑4 at 8 GHz.

Poly(vinylidene fluoride) Flexible Nanocomposite Films with Dopamine-Coated Giant Dielectric Ceramic Nanopowders, Ba(Fe0.5Ta0.5)O3, for High Energy-Storage Density at Low Electric Field.

PubMed

Wang, Zhuo; Wang, Tian; Wang, Chun; Xiao, Yujia; Jing, Panpan; Cui, Yongfei; Pu, Yongping

2017-08-30

Ba(Fe 0.5 Ta 0.5 )O 3 /poly(vinylidene fluoride) (BFT/PVDF) flexible nanocomposite films are fabricated by tape casting using dopamine (DA)-modified BFT nanopowders and PVDF as a matrix polymer. After a surface modification of installing a DA layer with a thickness of 5 nm, the interfacial couple interaction between BFT and PVDF is enhanced, resulting in less hole defects at the interface. Then the dielectric constant (ε'), loss tangent (tan δ), and AC conductivity of nanocomposite films are reduced. Meanwhile, the value of the reduced dielectric constant (Δε') and the strength of interfacial polarization (k) are introduced to illustrate the effect of DA on the dielectric behavior of nanocomposite films. Δε' can be used to calculate the magnitude of interfacial polarization, and the strength of the dielectric constant contributed by the interface can be expressed as k. Most importantly, the energy-storage density and energy-storage efficiency of nanocomposite films with a small BFT@DA filler content of 1 vol % at a low electric field of 150 MV/m are enhanced by about 15% and 120%, respectively, after DA modification. The high energy-storage density of 1.81 J/cm 3 is obtained in the sample. This value is much larger than the reported polymer-based nanocomposite films. In addition, the outstanding cycle and bending stability of the nanocomposite films make it a promising candidate for future flexible portable energy devices.

Study of Some Dielectric Properties of Suspensions of Magnesium Particles in Mineral Oil

NASA Technical Reports Server (NTRS)

Altshuller, Aubrey P

1954-01-01

The variation of dielectric constant has been measured as a function of the concentration of magnesium particles; the shape, size, and degree of oxidation of the particles; the temperature; and the frequency of oscillation. The variation of dielectric constant and settling rate was investigated as a function of time. Also investigated were the effects of particle concentration, shape and time on dielectric losses.

Dielectric Properties and Oxidation Roasting of Molybdenite Concentrate by Using Microwave Energy at 2.45 GHz Frequency

NASA Astrophysics Data System (ADS)

Yonglin, Jiang; Bingguo, Liu; Peng, Liu; Jinhui, Peng; Libo, Zhang

2017-12-01

Conversion of electromagnetic energy into heat depends largely on the dielectric properties of the material being treated. Therefore, determining the dielectric properties of molybdenite concentrate and its microwave power penetration depth in relation to a temperature increment at the commercial frequency of 2.45 GHz is necessary to design industrial microwave processing units. In this study, the dielectric constants increased as the temperature increased in the entire experimental range. The loss factor presented an opposite trend, except for 298 K to 373 K (25 °C to 100 °C) in which a cavity perturbation resonator was used. The plots of nonlinear surface fitting indicate that the increase in dielectric loss causes a considerable decrease in penetration depth, but the dielectric constants exert a small positive effect. The thermogravimetric analysis (TGA-DSC) of the molybdenite concentrate was carried out to track its thermal decomposition process, aim to a dielectric analysis during the microwave heating. MoO3 was prepared from molybdenite concentrate through oxidation roasting in a microwave heating system and a resistance furnace, respectively. The phase transitions and morphology evolutions during oxidation roasting were characterized through X-ray diffraction and scanning electron microscopy. Results show that microwave thermal technique can produce high-purity molybdenum trioxide.

Enhanced energy density and thermal conductivity in poly(fluorovinylidene-co-hexafluoropropylene) nanocomposites incorporated with boron nitride nanosheets exfoliated under assistance of hyperbranched polyethylene.

PubMed

Ye, Huijian; Lu, Tiemei; Xu, Chunfeng; Zhong, Mingqiang; Xu, Lixin

2018-03-02

Polymer dielectric film with a large dielectric constant, high energy density and enhanced thermal conductivity are of significance for the development of impulse capacitors. However, the fabrication of polymer dielectrics combining high energy density and thermal conductivity is still a challenge at the moment. Here we demonstrate the facile exfoliation of hexagonal boron nitride nanosheets (BNNSs) in common organic solvents under sonication with the assistance of hyperbranched polyethylene (HBPE). The noncovalent CH-π interactions between the nanosheets and HBPE ensure the dispersion of BNNSs in organic solvents with high concentrations, because of the highly branched chain structure of HBPE. Subsequently, the resultant BNNSs with a few defects are distributed uniformly in the poly(fluorovinylidene-co-hexafluoropropylene) (P(VDF-HFP)) nanocomposite films prepared via simple solution casting. The BNNS/P(VDF-HFP) nanocomposite exhibits outstanding dielectric properties, high energy density and high thermal conductivity. The dielectric constant of the 0.5 wt% nanocomposite film is 35.5 at 100 Hz with an energy density of 5.6 J cm -3 at 325 MV m -1 and a high charge-discharge efficiency of 79% due to the depression of the charge injection and chemical species ionization in a high field. Moreover, a thermal conductivity of 1.0 wt% nanocomposite film reaches 0.91 W·m -1  · K -1 , which is 3.13 times higher than that of the fluoropolymer matrix. With dipole accumulation and orientation in the interfacial zone, lightweight, flexible BNNS/P(VDF-HFP) nanocomposite films with high charge-discharge performance and thermal conductivity, exhibit promising applications in relatively high-temperature electronics and energy storage devices.

Enhanced energy density and thermal conductivity in poly(fluorovinylidene-co-hexafluoropropylene) nanocomposites incorporated with boron nitride nanosheets exfoliated under assistance of hyperbranched polyethylene

NASA Astrophysics Data System (ADS)

Ye, Huijian; Lu, Tiemei; Xu, Chunfeng; Zhong, Mingqiang; Xu, Lixin

2018-03-01

Polymer dielectric film with a large dielectric constant, high energy density and enhanced thermal conductivity are of significance for the development of impulse capacitors. However, the fabrication of polymer dielectrics combining high energy density and thermal conductivity is still a challenge at the moment. Here we demonstrate the facile exfoliation of hexagonal boron nitride nanosheets (BNNSs) in common organic solvents under sonication with the assistance of hyperbranched polyethylene (HBPE). The noncovalent CH-π interactions between the nanosheets and HBPE ensure the dispersion of BNNSs in organic solvents with high concentrations, because of the highly branched chain structure of HBPE. Subsequently, the resultant BNNSs with a few defects are distributed uniformly in the poly(fluorovinylidene-co-hexafluoropropylene) (P(VDF-HFP)) nanocomposite films prepared via simple solution casting. The BNNS/P(VDF-HFP) nanocomposite exhibits outstanding dielectric properties, high energy density and high thermal conductivity. The dielectric constant of the 0.5 wt% nanocomposite film is 35.5 at 100 Hz with an energy density of 5.6 J cm-3 at 325 MV m-1 and a high charge-discharge efficiency of 79% due to the depression of the charge injection and chemical species ionization in a high field. Moreover, a thermal conductivity of 1.0 wt% nanocomposite film reaches 0.91 W·m-1 · K-1, which is 3.13 times higher than that of the fluoropolymer matrix. With dipole accumulation and orientation in the interfacial zone, lightweight, flexible BNNS/P(VDF-HFP) nanocomposite films with high charge-discharge performance and thermal conductivity, exhibit promising applications in relatively high-temperature electronics and energy storage devices.

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

PubMed Central

Zhao, Chun; Zhao, Ce Zhou; Lu, Qifeng; Yan, Xiaoyi; Taylor, Stephen; Chalker, Paul R.

2014-01-01

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future. PMID:28788225

Poly(vinylidene fluoride-co-hexafluoropropylene)-graft-poly(dopamine methacrylamide) copolymers: A nonlinear dielectric material for high energy density storage

NASA Astrophysics Data System (ADS)

Rahimabady, Mojtaba; Qun Xu, Li; Arabnejad, Saeid; Yao, Kui; Lu, Li; Shim, Victor P. W.; Gee Neoh, Koon; Kang, En-Tang

2013-12-01

A nonlinear dielectric poly(vinylidene fluoride-co-hexafluoropropylene)-graft-poly(dopamine methacrylamide) [P(VDF-HFP)-g-PDMA] graft copolymer with ultra-high energy density of 33 J/cm3 was obtained by thermally initiated radical graft polymerization. It was observed that the dielectric constant of the graft copolymer films was 63% higher than that of P(VDF-HFP), with a large dielectric breakdown strength (>850 MV/m). Theoretical analyses and experimental measurements showed that the significant improvement in the electric polarization was attributed to the introduction of the highly polarizable hydroxyl groups in the PDMA side chains, and the large breakdown strength arose from the strong adhesion bonding of the catechol-containing graft copolymer to the metal electrode.

In-situ preparation of hierarchical flower-like TiO2/carbon nanostructures as fillers for polymer composites with enhanced dielectric properties

PubMed Central

Xu, Nuoxin; Zhang, Qilong; Yang, Hui; Xia, Yuting; Jiang, Yongchang

2017-01-01

Novel three-dimensional hierarchical flower-like TiO2/carbon (TiO2/C) nanostructures were in-situ synthesized via a solvothermal method involving calcination of organic precursor under inert atmosphere. The composite films comprised of P (VDF-HFP) and as-prepared hierarchical flower-like TiO2/C were fabricated by a solution casting and hot-pressing approach. The results reveal that loading the fillers with a small amount of carbon is an effective way to improve the dielectric constant and suppress the dielectric loss. In addition, TiO2/C particles with higher carbon contents exhibit superiority in promoting the dielectric constants of composites when compared with their noncarbon counterparts. For instance, the highest dielectric constant (330.6) of the TiO2/C composites is 10 times over that of noncarbon-TiO2-filled ones at the same filler volume fraction, and 32 times over that of pristine P (VDF-HFP). The enhancement in the dielectric constant can be attributed to the formation of a large network, which is composed of local micro-capacitors with carbon particles as electrodes and TiO2 as the dielectric in between. PMID:28262766

Dielectric and impedance study of praseodymium substituted Mg-based spinel ferrites

NASA Astrophysics Data System (ADS)

Farid, Hafiz Muhammad Tahir; Ahmad, Ishtiaq; Ali, Irshad; Ramay, Shahid M.; Mahmood, Asif; Murtaza, G.

2017-07-01

Spinel ferrites with nominal composition MgPryFe2-yO4 (y = 0.00, 0.025, 0.05, 0.075, 0.10) were prepared by sol-gel method. Temperature dependent DC electrical conductivity and drift mobility were found in good agreement with each other, reflecting semiconducting behavior. The dielectric properties of all the samples as a function of frequency (1 MHz-3 GHz) were measured at room temperature. The dielectric constant and complex dielectric constant of these samples decreased with the increase of praseodymium concentration. In the present spinel ferrite, Cole-Cole plots were used to separate the grain and grain boundary's effects. The substitution of praseodymium ions in Mg-based spinel ferrites leads to a remarkable rise of grain boundary's resistance as compared to the grain's resistance. As both AC conductivity and Cole-Cole plots are the functions of concentration, they reveal the dominant contribution of grain boundaries in the conduction mechanism. AC activation energy was lower than dc activation energy. Temperature dependence normalized AC susceptibility of spinel ferrites reveals that MgFe2O4 exhibits multi domain (MD) structure with high Curie temperature while on substitution of praseodymium, MD to SD transitions occurs. The low values of conductivity and low dielectric loss make these materials best candidate for high frequency application.

Characterization of polybenzimidazole (PBI) film at high temperatures

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad N.; Suthar, J. L.

1992-04-01

Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric.

Characterization of polybenzimidazole (PBI) film at high temperatures

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad N.; Suthar, J. L.

1992-01-01

Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric.

Dielectric Constant Measurements of Solid 4He

NASA Astrophysics Data System (ADS)

Yin, L.; Xia, J. S.; Huan, C.; Sullivan, N. S.; Chan, M. H. W.

2011-03-01

Careful measurements of the dielectric properties of solid 4He have been carried out down to 35 mK, considerably lower than the temperature range of previous studies. The sample was prepared from high purity gas with 3He concentrations of the order of 200 ppb and were formed by the blocked capillary method. The molar volume of the sample was 20.30 cm3. The dielectric constant of the samples was found to be independent of temperature down to 120 mK before showing a continuous increase with decreasing temperature and saturating below 50 mK. The total increase in ɛ is 2 parts in 10-5. The temperature dependence of ɛ mimics the increase in the resonant frequency found in the torsional oscillator studies and also the increase found in the shear modulus measurements.

Constant-current corona triode adapted and optimized for the characterization of thin dielectric films

NASA Astrophysics Data System (ADS)

Giacometti, José A.

2018-05-01

This work describes an enhanced corona triode with constant current adapted to characterize the electrical properties of thin dielectric films used in organic electronic devices. A metallic grid with a high ionic transparency is employed to charge thin films (100 s of nm thick) with a large enough charging current. The determination of the surface potential is based on the grid voltage measurement, but using a more sophisticated procedure than the previous corona triode. Controlling the charging current to zero, which is the open-circuit condition, the potential decay can be measured without using a vibrating grid. In addition, the electric capacitance and the characteristic curves of current versus the stationary surface potential can also be determined. To demonstrate the use of the constant current corona triode, we have characterized poly(methyl methacrylate) thin films with films with thicknesses in the range from 300 to 500 nm, frequently used as gate dielectric in organic field-effect transistors.

L-band Dielectric Constant Measurements of Seawater (Oral presentation and SMOS Poster)

NASA Technical Reports Server (NTRS)

Lang, Roger H.; Utku, Cuneyt; LeVine, David M.

2003-01-01

This paper describes a resonant cavity technique for the measurement of the dielectric constant of seawater as a function of its salinity. Accurate relationships between salinity and dielectric constant (which determines emissivity) are needed for sensor systems such as SMOS and Aquarius that will monitor salinity from space in the near future. The purpose of the new measurements is to establish the dependence of the dielectric constant of seawater on salinity in contemporary units (e.g. psu) and to take advantage of modern instrumentation to increase the accuracy of these measurements. The measurement device is a brass cylindrical cavity 16cm in diameter and 7cm in height. The seawater is introduced into the cavity through a slender glass tube having an inner diameter of 0.1 mm. By assuming that this small amount of seawater slightly perturbs the internal fields in the cavity, perturbation theory can be employed. A simple formula results relating the real part of the dielectric constant to the change in resonant frequency of the cavity. In a similar manner, the imaginary part of the dielectric constant is related to the change in the cavity s Q. The expected accuracy of the cavity technique is better than 1% for the real part and 1 to 2% for the imaginary part. Presently, measurements of methanol have been made and agree with precision measurements in the literature to within 1% in both real and imaginary parts. Measurements have been made of the dielectric constant of seawater samples from Ocean Scientific in the United Kingdom with salinities of 10, 30, 35 and 38 psu. All measurements were made at room temperature. Plans to make measurements at a range of temperatures and salinities will be discussed.

Composite-Based High Performance Electroactive Polymers For Remotely Controlled Mechanical Manipulations in NASA Applications

NASA Technical Reports Server (NTRS)

Zhang, Q. M.

2003-01-01

This program supported investigation of an all-polymer percolative composite which exhibits very high dielectric constant (less than 7,000). The experimental results show that the dielectric behavior of this new class of percolative composites follows the prediction of the percolation theory and the analysis of the conductive percolation phenomena. The very high dielectric constant of the all-polymer composites which are also very flexible and possess elastic modulus not very much different from that of the insulation polymer matrix makes it possible to induce a high electromechanical response under a much reduced electric field (a strain of 2.65% with an elastic energy density of 0.18 J/cu cm can be achieved under a field of 16 MV/m). Data analysis also suggests that in these composites, the non-uniform local field distribution as well as interface effects can significantly enhance the strain responses. Furthermore, the experimental data as well as the data analysis indicate that the conduction loss in these composites will not affect the strain hysteresis.

Microstrip Ring Resonator for Soil Moisture Measurements

NASA Technical Reports Server (NTRS)

Sarabandi, Kamal; Li, Eric S.

1993-01-01

Accurate determination of spatial soil moisture distribution and monitoring its temporal variation have a significant impact on the outcomes of hydrologic, ecologic, and climatic models. Development of a successful remote sensing instrument for soil moisture relies on the accurate knowledge of the soil dielectric constant (epsilon(sub soil)) to its moisture content. Two existing methods for measurement of dielectric constant of soil at low and high frequencies are, respectively, the time domain reflectometry and the reflection coefficient measurement using an open-ended coaxial probe. The major shortcoming of these methods is the lack of accurate determination of the imaginary part of epsilon(sub soil). In this paper a microstrip ring resonator is proposed for the accurate measurement of soil dielectric constant. In this technique the microstrip ring resonator is placed in contact with soil medium and the real and imaginary parts of epsilon(sub soil) are determined from the changes in the resonant frequency and the quality factor of the resonator respectively. The solution of the electromagnetic problem is obtained using a hybrid approach based on the method of moments solution of the quasi-static formulation in conjunction with experimental data obtained from reference dielectric samples. Also a simple inversion algorithm for epsilon(sub soil) = epsilon'(sub r) + j(epsilon"(sub r)) based on regression analysis is obtained. It is shown that the wide dynamic range of the measured quantities provides excellent accuracy in the dielectric constant measurement. A prototype microstrip ring resonator at L-band is designed and measurements of soil with different moisture contents are presented and compared with other approaches.

Anomalous thermal hysteresis in dielectric permittivity of CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Wang, C. C.; Zhang, L. W.

2008-03-01

We herein report an anomalous thermal hysteresis in dielectric permittivity in CaCu3Ti4O12. The anomalous behavior was well explained in terms of the low-temperature Maxwell-Wagner relaxation induced by frozen carriers. A multirelaxation mechanism, i.e., the coupling of the dipole relaxation to the frozen carrier-induced and blocked carrier-induced Maxwell-Wagner relaxations in the low-temperature and high-temperature regions, respectively, is proposed to be the origin of the colossal dielectric constant.

Analysis of the Dielectric constant of saline-alkali soils and the effect on radar backscattering coefficient: a case study of soda alkaline saline soils in Western Jilin Province using RADARSAT-2 data.

PubMed

Li, Yang-yang; Zhao, Kai; Ren, Jian-hua; Ding, Yan-ling; Wu, Li-li

2014-01-01

Soil salinity is a global problem, especially in developing countries, which affects the environment and productivity of agriculture areas. Salt has a significant effect on the complex dielectric constant of wet soil. However, there is no suitable model to describe the variation in the backscattering coefficient due to changes in soil salinity content. The purpose of this paper is to use backscattering models to understand behaviors of the backscattering coefficient in saline soils based on the analysis of its dielectric constant. The effects of moisture and salinity on the dielectric constant by combined Dobson mixing model and seawater dielectric constant model are analyzed, and the backscattering coefficient is then simulated using the AIEM. Simultaneously, laboratory measurements were performed on ground samples. The frequency effect of the laboratory results was not the same as the simulated results. The frequency dependence of the ionic conductivity of an electrolyte solution is influenced by the ion's components. Finally, the simulated backscattering coefficients measured from the dielectric constant with the AIEM were analyzed using the extracted backscattering coefficient from the RADARSAT-2 image. The results show that RADARSAT-2 is potentially able to measure soil salinity; however, the mixed pixel problem needs to be more thoroughly considered.

Cyanate ester-nanoparticle composites as multifunctional structural capacitors

NASA Astrophysics Data System (ADS)

De Leon, J. Eliseo

An important goal of engineering is to increase the energy density of electrical energy storage devices used to deliver power onboard mobile platforms. Equally important is the goal to reduce the overall mass of the vehicles transporting these devices to achieve increased fuel and cost efficiency. One approach to meeting both these objectives is to develop multifunctional systems that serve as both energy storage and load bearing structural devices. Multifunctional devices consist of constituents that individually perform a subset of the overall desired functions. However, the synergy achieved by the combination of each constituent's characteristics allows for system-level benefits that cannot be achieved by simply optimizing the separate subsystems. We investigated multifunctional systems consisting of light weight polymer matrix and high dielectric constant fillers to achieve these objectives. The monomer of bisphenol E cyanate ester exhibited excellent processing ability because of its low room temperature viscosity. Additionally, the fully cured thermoset demonstrated excellent thermal stability, specific strength and stiffness. Fillers, including multi-walled carbon nanotubes, nanometer scale barium titanate and nanometer scale calcium copper titanate, offer high dielectric constants that raised the effective dielectric constant of the polymer matrix composite. The combination of high epsilon'and high dielectric strength produce high energy density components exhibiting increased electrical energy storage. Mechanical (load bearing) improvements of the PMCs were attributed to covalently bonded nanometer and micrometer sized filler particles, as well as the continuous glass fiber, integrated into the resin systems which increased the structural characteristics of the cured composites. Breakdown voltage tests and dynamic mechanical analysis were employed to demonstrate that precise combinations of these constituents, under the proper processing conditions, can satisfy the needs presented by the aerospace industry and military forces.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

NASA Astrophysics Data System (ADS)

Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

2015-06-01

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr0.52Ti0.48)-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (gm-Vg) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

Optically controlled dielectric properties of single-walled carbon nanotubes for terahertz wave applications.

PubMed

Smirnov, Serguei; Anoshkin, Ilya V; Demchenko, Petr; Gomon, Daniel; Lioubtchenko, Dmitri V; Khodzitsky, Mikhail; Oberhammer, Joachim

2018-06-21

Materials with tunable dielectric properties are valuable for a wide range of electronic devices, but are often lossy at terahertz frequencies. Here we experimentally report the tuning of the dielectric properties of single-walled carbon nanotubes under light illumination. The effect is demonstrated by measurements of impedance variations at low frequency as well as complex dielectric constant variations in the wide frequency range of 0.1-1 THz by time domain spectroscopy. We show that the dielectric constant is significantly modified for varying light intensities. The effect is also practically applied to phase shifters based on dielectric rod waveguides, loaded with carbon nanotube layers. The carbon nanotubes are used as tunable impedance surface controlled by light illumination, in the frequency range of 75-500 GHz. These results suggest that the effect of dielectric constant tuning with light, accompanied by low transmission losses of the carbon nanotube layer in such an ultra-wide band, may open up new directions for the design and fabrication of novel Terahertz and optoelectronic devices.

Studies on the structural, optical and dielectric properties of samarium coordinated with salicylic acid single crystal

NASA Astrophysics Data System (ADS)

Singh, Harjinder; Slathia, Goldy; Gupta, Rashmi; Bamzai, K. K.

2018-04-01

Samarium coordinated with salicylic acid was successfully grown as a single crystal by low temperature solution technique using mixed solvent of methanol and water in equal ratio. Structural characterization was carried out by single crystal X-ray diffraction analysis and it crystallizes in centrosymmetric space group P121/c1. FTIR and UV-Vis-NIR spectroscopy confirmed the compound formation and help to determine the mode of binding of the ligand to the rare earth-metal ion. Dielectric constant and dielectric loss have been measured over the frequency range 100 Hz - 30MHz. The decrease in dielectric constant with increases in frequency is due to the transition from interfacial polarization to dipolar polarization. The small value of dielectric constant at higher frequency ensures that the crystal is good candidate for NLO devices. Dielectric loss represents the resistive nature of the material.

Room temperature magnetic and dielectric properties of cobalt doped CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Mu, Chunhong; Song, Yuanqiang; Wang, Haibin; Wang, Xiaoning

2015-05-01

CaCu3Ti4-xCoxO12 (x = 0, 0.2, 0.4) ceramics were prepared by a conventional solid state reaction, and the effects of cobalt doping on the room temperature magnetic and dielectric properties were investigated. Both X-ray diffraction and energy dispersive X-ray spectroscopy confirmed the presence of Cu and Co rich phase at grain boundaries of Co-doped ceramics. Scanning electron microscopy micrographs of Co-doped samples showed a striking change from regular polyhedral particle type in pure CaCu3Ti4O12 (CCTO) to sheet-like grains with certain growth orientation. Undoped CaCu3Ti4O12 is well known for its colossal dielectric constant in a broad temperature and frequency range. The dielectric constant value was slightly changed by 5 at. % and 10 at. % Co doping, whereas the second relaxation process was clearly separated in low frequency region at room temperature. A multirelaxation mechanism was proposed to be the origin of the colossal dielectric constant. In addition, the permeability spectra measurements indicated Co-doped CCTO with good magnetic properties, showing the initial permeability (μ') as high as 5.5 and low magnetic loss (μ″ < 0.2) below 3 MHz. And the interesting ferromagnetic superexchange coupling in Co-doped CaCu3Ti4O12 was discussed.

Dielectric Properties of Tungsten Copper Barium Ceramic as Promising Colossal-Permittivity Material

NASA Astrophysics Data System (ADS)

Wang, Juanjuan; Chao, Xiaolian; Li, Guangzhao; Feng, Lajun; Zhao, Kang; Ning, Tiantian

2017-08-01

Ba(Cu0.5W0.5)O3 (BCW) ceramic has been fabricated and its dielectric properties investigated for use in energy-storage applications, revealing a very large dielectric constant (˜104) at 1 kHz. Moreover, the colossal-permittivity BCW ceramic exhibited fine microstructure and optimal temperature stability over a wide temperature range from room temperature to 500°C. The internal barrier layer capacitor mechanism was considered to be responsible for its high dielectric properties. Based on activation values, it is concluded that doubly ionized oxygen vacancies make a substantial contribution to the conduction and relaxation behaviors at grain boundaries. This study suggests that this kind of material has potential for use in high-density energy storage applications.

Dielectric constants of soils at microwave frequencies

NASA Technical Reports Server (NTRS)

Geiger, F. E.; Williams, D.

1972-01-01

A knowledge of the complex dielectric constant of soils is essential in the interpretation of microwave airborne radiometer data of the earth's surface. Measurements were made at 37 GHz on various soils from the Phoenix, Ariz., area. Extensive data have been obtained for dry soil and soil with water content in the range from 0.6 to 35 percent by dry weight. Measurements were made in a two arm microwave bridge and results were corrected for reflections at the sample interfaces by solution of the parallel dielectric plate problem. The maximum dielectric constants are about a factor of 3 lower than those reported for similar soils at X-band frequencies.

Comparative Study of HfTa-based gate-dielectric Ge metal-oxide-semiconductor capacitors with and without AlON interlayer

NASA Astrophysics Data System (ADS)

Xu, J. P.; Zhang, X. F.; Li, C. X.; Chan, C. L.; Lai, P. T.

2010-04-01

The electrical properties and high-field reliability of HfTa-based gate-dielectric metal-oxide-semiconductor (MOS) devices with and without AlON interlayer on Ge substrate are investigated. Experimental results show that the MOS capacitor with HfTaON/AlON stack gate dielectric exhibits low interface-state/oxide-charge densities, low gate leakage, small capacitance equivalent thickness (˜1.1 nm), and high dielectric constant (˜20). All of these should be attributed to the blocking role of the ultrathin AlON interlayer against interdiffusions of Ge, Hf, and Ta and penetration of O into the Ge substrate, with the latter effectively suppressing the unintentional formation of unstable poor-quality low- k GeO x and giving a superior AlON/Ge interface. Moreover, incorporation of N into both the interlayer and high- k dielectric further improves the device reliability under high-field stress through the formation of strong N-related bonds.

Microwave dielectric behavior of vegetation material

NASA Technical Reports Server (NTRS)

Elrayes, Mohamed A.; Ulaby, Fawwaz T.

1987-01-01

The microwave dielectric behavior of vegetation was examined through the development of theoretical models involving dielectric dispersion by both bound and free water and supported by extensive dielectric measurements conducted over a wide range of conditions. The experimental data were acquired using an open-ended coaxial probe that was developed for sensing the dielectric constant of thin layers of materials, such as leaves, from measurements of the complex reflection coefficient using a network analyzer. The probe system was successfully used to record the spectral variation of the dielectric constant over a wide frequency range extending from 0.5 to 20.4 GHz at numerous temperatures between -40 to +40 C. The vegetation samples were measured over a wide range of moisture conditions. To model the dielectric spectrum of the bound water component of the water included in vegetation, dielectric measurements were made for several sucrose-water solutions as analogs for the situation in vegetation. The results were used in conjunction with the experimental data for leaves to determine some of the constant coefficients in the theoretical models. Two models, both of which provide good fit to the data, are proposed.

Improved Dielectric Properties and Energy Storage Density of Poly(vinylidene fluoride-co-hexafluoropropylene) Nanocomposite with Hydantoin Epoxy Resin Coated BaTiO3.

PubMed

Luo, Hang; Zhang, Dou; Jiang, Chao; Yuan, Xi; Chen, Chao; Zhou, Kechao

2015-04-22

Energy storage materials are urgently demanded in modern electric power supply and renewable energy systems. The introduction of inorganic fillers to polymer matrix represents a promising avenue for the development of high energy density storage materials, which combines the high dielectric constant of inorganic fillers with supernal dielectric strength of polymer matrix. However, agglomeration and phase separation of inorganic fillers in the polymer matrix remain the key barriers to promoting the practical applications of the composites for energy storage. Here, we developed a low-cost and environmentally friendly route to modifying BaTiO3 (BT) nanoparticles by a kind of water-soluble hydantoin epoxy resin. The modified BT nanoparticles exhibited homogeneous dispersion in the ferroelectric polymer poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) matrix and strong interfacial adhesion with the polymer matrix. The dielectric constants of the nanocomposites increased significantly with the increase of the coated BT loading, while the dielectric loss of the nanocomposites was still as low as that of the pure P(VDF-HFP). The energy storage density of the nanocomposites was largely enhanced with the coated BT loading at the same electric field. The nanocomposite with 20 vol % BT exhibited an estimated maximum energy density of 8.13 J cm(-3), which was much higher than that of pure P(VDF-HFP) and other dielectric polymers. The findings of this research could provide a feasible approach to produce high energy density materials for practical application in energy storage.

Effect of doping ions on the structural defect and the electrical behavior of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Renzhong; Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou 450002; Zhao, Gaoyang, E-mail: zhaogy@xaut.edu.cn

Graphical abstract: The dielectric constant decreases with Ta doping, increases with Y doping and keeps almost constant with Zr doping compared with that of pure CCTO. - Highlights: • Y and Ta doping cause different defect types and concentration. • Defect influences the grain boundary mobility and results in different grain size. • Y doping increases the dielectric constant and decreases the nonlinear property. • Ta doping decreases the dielectric constant and enhances the nonlinear property. • Zr doped sample has nearly the defect type and dielectric properties as CaCu{sub 3}Ti{sub 4}O{sub 12}. - Abstract: The microstructure, dielectric and electricalmore » properties of CaCu{sub 3}Ti{sub 4−x}R{sub x}O{sub 12} (R = Y, Zr, Ta; x = 0 and 0.005) ceramics were investigated by XRD, Raman spectra, SEM and dielectric spectrum measurements. Positron annihilation measurements have been performed to investigate the influence of doping on the defects. The results show that all samples form a single crystalline phase. Y and Ta doping cause different defect types and increase the defect size and concentration, which influence the mobility of grain boundary and result in the different grain size. Y doping increases the dielectric constant and decreases the nonlinear property while Ta doping lead to an inverse result. Zr-doped sample has nearly the defect type, grain morphology and dielectric properties as pure CaCu{sub 3}Ti{sub 4}O{sub 12}. The effects of microstructure including the grain morphology and the vacancy defects on the mechanism of the dielectric and electric properties by doping are discussed.« less

Numerical calculations of temperature dependence of dielectric constant for an ordered assembly of BaTiO3 nanocubes with small tilt angles

NASA Astrophysics Data System (ADS)

Yasui, Kyuichi; Mimura, Ken-ichi; Izu, Noriya; Kato, Kazumi

2018-03-01

The dielectric constant of an ordered assembly of BaTiO3 nanocubes is numerically calculated as a function of temperature assuming a distribution of tilt angles of attached nanocubes. As the phase transition temperature from the tetragonal crystal structure to the cubic crystal structure of a BaTiO3 nanocube decreases as the tilt angle increases, the temperature at the peak of the dielectric constant of an ordered assembly is considerably lower than the Curie temperature of a free-standing BaTiO3 crystal. The peak of the dielectric constant as a function of temperature for an ordered assembly becomes considerably broader than that for a single crystal owing to the contribution of nanocubes with various tilt angles.

On the room temperature multiferroic BiFeO3: magnetic, dielectric and thermal properties

NASA Astrophysics Data System (ADS)

Lu, J.; Günther, A.; Schrettle, F.; Mayr, F.; Krohns, S.; Lunkenheimer, P.; Pimenov, A.; Travkin, V. D.; Mukhin, A. A.; Loidl, A.

2010-06-01

Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at mm-wavelengths, as well as ferroelectric polarization are reported for single crystalline BiFeO3. A well developed anomaly in the magnetic susceptibility signals the onset of antiferromagnetic order close to 635 K. Beside this anomaly no further indications of phase or glass transitions are indicated in the magnetic dc and ac susceptibilities down to the lowest temperatures. The heat capacity has been measured from 2 K up to room temperature and significant contributions from magnon excitations have been detected. From the low-temperature heat capacity an anisotropy gap of the magnon modes of the order of 6 meV has been determined. The dielectric constants measured in standard two-point configuration are dominated by Maxwell-Wagner like effects for temperatures T > 300 K and frequencies below 1 MHz. At lower temperatures the temperature dependence of the dielectric constant and loss reveals no anomalies outside the experimental errors, indicating neither phase transitions nor strong spin phonon coupling. The temperature dependence of the dielectric constant was measured contact free at microwave frequencies. At room temperature the dielectric constant has an intrinsic value of 53. The loss is substantial and strongly frequency dependent indicating the predominance of hopping conductivity. Finally, in small thin samples we were able to measure the ferroelectric polarization between 10 and 200 K. The saturation polarization is of the order of 40 μC/cm2, comparable to reports in literature.

Stretchable, High-k Dielectric Elastomers through Liquid-Metal Inclusions.

PubMed

Bartlett, Michael D; Fassler, Andrew; Kazem, Navid; Markvicka, Eric J; Mandal, Pratiti; Majidi, Carmel

2016-05-01

An all-soft-matter composite with exceptional electro-elasto properties is demonstrated by embedding liquid-metal inclusions in an elastomer matrix. This material exhibits a unique combination of high dielectric constant, low stiffness, and large strain limit (ca. 600% strain). The elasticity, electrostatics, and electromechanical coupling of the composite are investigated, and strong agreement with predictions from effective medium theory is found. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Preparation Process and Dielectric Properties of Ba(0.5)Sr(0.5)TiO3-P(VDF-CTFE) Nanocomposites

NASA Technical Reports Server (NTRS)

Zhang, Lin; Wu, Peixuang; Li, Yongtang; Cheng, Z. -Y.; Brewer, Jeffrey C.

2014-01-01

Ceramic-polymer 0-3 nanocomposites, in which nanosized Ba(0.5)Sr(0.5)TiO3 (BST) powders were used as ceramic filler and P(VDF-CTFE) 88/12 mol% [poly(vinylidene fluoridechlorotrifluoroethylene)] copolymer was used as matrix, were studied over a concentration range from 0 to 50 vol.% of BST powders. It is found that the solution cast composites are porous and a hot-press process can eliminate the porosity, which results in a dense composite film. Two different configurations used in the hot-press process are studied. Although there is no clear difference in the uniformity and microstructure of the composites prepared using these two configurations, the composite prepared using one configuration exhibit a higher dielectric constant with a lower loss. For the composite with 40 vol. BST, a dielectric constant of 70 with a loss of 0.07 at 1 kHz is obtained at room temperature. The composites exhibit a lower dielectric loss than the polymer matrix at high frequency. However, at low frequency, the composites exhibit a higher loss than the polymer matrix due to a low frequency relaxation process that appears in the composites. It is believed that this relaxation process is related to the interfacial layer formed between BST particle and the polymer matrix. The temperature dependence of the dielectric property of the composites was studied. It is found that the dielectric constant of these composites is almost independent of the temperature over a temperature range from 20 to 120 C. Key words: A. Polymer-matrix composites (PMCs); B. Electrical Properties; E. Casting; E. Heat treatment; Dielectric properties.

Dielectric properties of soils as a function of moisture content

NASA Technical Reports Server (NTRS)

Cihlar, J.; Ulaby, F. T.

1974-01-01

Soil dielectric constant measurements are reviewed and the dependence of the dielectric constant on various soil parameters is determined. Moisture content is given special attention because of its practical significance in remote sensing and because it represents the single most influential parameter as far as soil dielectric properties are concerned. Relative complex dielectric constant curves are derived as a function of volumetric soil water content at three frequencies (1.3 GHz, 4.0 GHz, and 10.0 GHz) for each of three soil textures (sand, loam, and clay). These curves, presented in both tabular and graphical form, were chosen as representative of the reported experimental data. Calculations based on these curves showed that the power reflection coefficient and emissivity, unlike skin depth, vary only slightly as a function of frequency and soil texture.

Possible origin of nonlinear conductivity and large dielectric constant in the commensurate charge-density-wave phase of 1 T -TaS2

NASA Astrophysics Data System (ADS)

Ma, Yongchang; Hou, Yanhui; Lu, Cuimin; Li, Lijun; Petrovic, Cedomir

2018-05-01

The electric field dependence of the dielectric properties and the nonlinear conductance of 1 T -TaS2 below 50 K has been investigated. A large dielectric constant of about 104 is obtained up to 107 Hz, which cannot be attributed to hopping of the localized carriers alone, the collective excitations of the commensurate charge-density-wave must be another contributor. The dielectric spectra disperse slightly in our measured temperature and frequency range. At a moderate dc bias field, the real part of the dielectric constant ɛ1(ω ) decreases. We propose that the separation of bound soliton-antisoliton pairs may be a contributor to the reduction of ɛ1(ω ) and the accompanying nonlinear conductivity with increasing dc bias.

Wave attenuation and mode dispersion in a waveguide coated with lossy dielectric material

NASA Technical Reports Server (NTRS)

Lee, C. S.; Chuang, S. L.; Lee, S. W.; Lo, Y. T.

1984-01-01

The modal attenuation constants in a cylindrical waveguide coated with a lossy dielectric material are studied as functions of frequency, dielectric constant, and thickness of the dielectric layer. A dielectric material best suited for a large attenuation is suggested. Using Kirchhoff's approximation, the field attenuation in a coated waveguide which is illuminated by a normally incident plane wave is also studied. For a circular guide which has a diameter of two wavelengths and is coated with a thin lossy dielectric layer (omega sub r = 9.1 - j2.3, thickness = 3% of the radius), a 3 dB attenuation is achieved within 16 diameters.

Fabrication of selectively functionalized-graphene reinforced copper phthalocyanine nanocomposites with low dielectric loss and high dielectric constant

NASA Astrophysics Data System (ADS)

Wang, Zicheng; Wei, Renbo; Liu, Xiaobo

2017-01-01

A novel kind of selectively functionalized-graphene reinforced copper phthalocyanine (RGO-O-CuPc) nanocomposites was successfully fabricated through a facile and effective three-step method, involving preferential surficial modification and reduction of graphene oxide (GO) sheets, and followed by incorporating with CuPc via in situ polymerization. The results of SEM, AFM, XPS, FTIR, XRD and UV-vis confirmed that GO was effectively surficial functionalized by a ring-open covalent reaction between amino in 3-aminophenoxyphthalonitrile (3-APN) and epoxy groups on the GO sheets, and partly reduced back to graphene under solvothermal conditions. And the RGO-O-CuPc was successfully fabricated by self-assembling of CuPc molecule on graphene sheets via in situ polymerization. As a consequence, the selective surface functionalization and solvothermal reduction of GO facilitated the improvement in the dielectric constant and AC conductivity, and the decrease in the dielectric loss of the graphene/CuPc nanocomposites.

High Dielectric Constants of Composites of Fiber-Like Copper Phthalocyanine-Coated Graphene Oxide Embedded in Poly(arylene Ether Nitriles)

NASA Astrophysics Data System (ADS)

Li, Jingwei; Pu, Zejun; Wang, Zicheng; Long, Ya; Jia, Kun; Liu, Xiaobo

2015-07-01

The surfaces of graphene oxide (GO) sheets were coated with fiber-like copper phthalocyanine (CuPc) by use of a solvothermal process. The product, GO@ CuPc, was used as a filler in high-performance poly(arylene ether nitrile) (PEN) composites. Films of the composites had high thermal stability, and glass-transition temperatures in the range 170-182°C. Thermogravimetric analysis revealed their initial decomposition temperatures were in the range 470-483°C. Scanning electron microscopy showed that dispersion of GO@ CuPc in PEN was much better than that of unmodified GO; this can be attributed to relatively strong interaction between GO@CuPc and the PEN matrix. All the composite films were highly flexible and had enhanced mechanical properties. Tensile strengths of the composites were as high as 89 MPa in the presence of 1 wt.% GO@CuPc, an increase of 20% compared with pure PEN film. Dielectric constants of the composite films were as high as 52 at 100 Hz when the GO@CuPc content was 5%. Because of these excellent mechanical and dielectric properties, PEN/GO@CuPc composites have much potential for use as film capacitors.

Voltage sensor and dielectric material

DOEpatents

Yakymyshyn, Christopher Paul; Yakymyshyn, Pamela Jane; Brubaker, Michael Allen

2006-10-17

A voltage sensor is described that consists of an arrangement of impedance elements. The sensor is optimized to provide an output ratio that is substantially immune to changes in voltage, temperature variations or aging. Also disclosed is a material with a large and stable dielectric constant. The dielectric constant can be tailored to vary with position or direction in the material.

The review of various synthesis methods of barium titanate with the enhanced dielectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

More, S. P., E-mail: smitalomte@gmail.com; Topare, R. J., E-mail: r-topare@yahoo.com

2016-05-06

The Barium Titanate is a very well known dielectric ceramic belongs to perovskite structure. It has very wide applications in the field of electronic, electro ceramic, electromechanical and electro-optical applications. Barium Titanate has very high dielectric constant as well as low dielectric loss. Substituted dielectrics are one of the most important technological compounds in modern electro ceramics. Its electrical properties can be tuned flexibly by a simple substitution technique. This has encouraged researchers to select a typical cation to be substituted at cationic sites. In the present paper, the review of various synthesis methods of Barium Titanate compound with themore » effect of different dopants, the grain size on the dielectric properties at various temperatures is discussed.« less

Dilatometric shrinkage study on magnesium titanate-based ceramic systems

NASA Astrophysics Data System (ADS)

Ermawati, F. U.; Suasmoro, S.

2018-03-01

The development of dielectric materials for applications in the microwave frequencies has been increasing with rapid progress in mobile and satellite communication systems. Magnesium titanate (MgTiO3)-based ceramics have been the favourite candidates for such applications due to their excellent dielectric characteristics, i.e. a moderate level of dielectric constant together with a high-quality factor and high-temperature stability. These outstanding performance, however, can only be achieved when the ceramics are highly dense. The work reported in this paper discussed the study on the dilatometric shrinkage behaviour of pure and zinc-doped magnesium titanate (Mg1–xZn x TiO3 for x = 0–0.5) ceramic systems after the systems following the heating passage up to 1300 °C. The results were discussed based on the phase formation data recorded from powder X-ray diffraction (XRD). An additional 2 wt. % V2O5 to the MZT0.2 system has increased the shrinkage of the system, and hence the relative density. The V2O5 addition also prevented the grain growth and did not alter the structure. From 100 Hz to 20 MHz, the dielectric permittivity is constant; which varies from (15.4 – 17.0) ± 0.1 % throughout the samples, these values are therefore frequency independent.

Electrohydrodynamic pressure enhanced by free space charge for electrically induced structure formation with high aspect ratio.

PubMed

Tian, Hongmiao; Wang, Chunhui; Shao, Jinyou; Ding, Yucheng; Li, Xiangming

2014-10-28

Electrically induced structure formation (EISF) is an interesting and unique approach for generating a microstructured duplicate from a rheological polymer by a spatially modulated electric field induced by a patterned template. Most of the research on EISF have so far used various dielectric polymers (with an electrical conductivity smaller than 10(-10) S/m that can be considered a perfect dielectric), on which the electric field induces a Maxwell stress only due to the dipoles (or bounded charges) in the polymer molecules, leading to a structure with a small aspect ratio. This paper presents a different approach for improving the aspect ratio allowed in EISF by doping organic salt into the perfect dielectric polymer, i.e., turning the perfect dielectric into a leaky dielectric, considering the fact that the free space charges enriched in the leaky dielectric polymer can make an additional contribution to the Maxwell stress, i.e., electrohydrodynamic pressure, which is desirable for high aspect ratio structuring. Our numerical simulations and experimental tests have shown that a leaky dielectric polymer, with a small conductivity comparable to that of deionized water, can be much more effective at being electrohydrodynamically deformed into a high aspect ratio in comparison with a perfect dielectric polymer when both of them have roughly the same dielectric constant.

A Multi-Objective Optimization Technique to Model the Pareto Front of Organic Dielectric Polymers

NASA Astrophysics Data System (ADS)

Gubernatis, J. E.; Mannodi-Kanakkithodi, A.; Ramprasad, R.; Pilania, G.; Lookman, T.

Multi-objective optimization is an area of decision making that is concerned with mathematical optimization problems involving more than one objective simultaneously. Here we describe two new Monte Carlo methods for this type of optimization in the context of their application to the problem of designing polymers with more desirable dielectric and optical properties. We present results of applying these Monte Carlo methods to a two-objective problem (maximizing the total static band dielectric constant and energy gap) and a three objective problem (maximizing the ionic and electronic contributions to the static band dielectric constant and energy gap) of a 6-block organic polymer. Our objective functions were constructed from high throughput DFT calculations of 4-block polymers, following the method of Sharma et al., Nature Communications 5, 4845 (2014) and Mannodi-Kanakkithodi et al., Scientific Reports, submitted. Our high throughput and Monte Carlo methods of analysis extend to general N-block organic polymers. This work was supported in part by the LDRD DR program of the Los Alamos National Laboratory and in part by a Multidisciplinary University Research Initiative (MURI) Grant from the Office of Naval Research.

Inkjet printed graphene-based field-effect transistors on flexible substrate

NASA Astrophysics Data System (ADS)

Monne, Mahmuda Akter; Enuka, Evarestus; Wang, Zhuo; Chen, Maggie Yihong

2017-08-01

This paper presents the design and fabrication of inkjet printed graphene field-effect transistors (GFETs). The inkjet printed GFET is fabricated on a DuPont Kapton FPC Polyimide film with a thickness of 5 mill and dielectric constant of 3.9 by using a Fujifilm Dimatix DMP-2831 materials deposition system. A layer by layer 3D printing technique is deployed with an initial printing of source and drain by silver nanoparticle ink. Then graphene active layer doped with molybdenum disulfide (MoS2) monolayer/multilayer dispersion, is printed onto the surface of substrate covering the source and drain electrodes. High capacitance ion gel is adopted as the dielectric material due to the high dielectric constant. Then the dielectric layer is then covered with silver nanoparticle gate electrode. Characterization of GFET has been done at room temperature (25°C) using HP-4145B semiconductor parameter analyzer (Hewlett-Packard). The characterization result shows for a voltage sweep from -2 volts to 2 volts, the drain current changes from 949 nA to 32.3 μA and the GFET achieved an on/off ratio of 38:1, which is a milestone for inkjet printed flexible graphene transistor.

Effect of vanadium doping on the properties of high Curie point ferroelectric strontium niobate ceramic

NASA Astrophysics Data System (ADS)

Ning, Huanpo

2017-10-01

Different levels of isovalent dopant vanadium were doped on the B site of Sr2Nb2O7 to explore the doping effect on its dielectric and ferroelectric properties. A second phase could be detected with above 1 mol% V2O5 doping. The grains after doping remained anisotropic and plate-like. The samples are not dense, as there are pores present at the grain boundaries. The corrected dielectric constant for 0.1 mol%, 0.2 mol%, and 0.3 mol% V doped SNO at 1 MHz is around 46, 48 and 49, respectively, which indicates the effect of V doping on the increase of dielectric constant of SNO (ɛr is about 40 at 1 MHz). The Curie point Tc increased with the increase in the V doping level. The relatively high d33 (2.3 pC/N) measured from the non-dense and untextured samples indicates the potential effect of V2O5 doping on the improvement of piezoelectricity of SNO.

High accuracy electronic material level sensor

DOEpatents

McEwan, T.E.

1997-03-11

The High Accuracy Electronic Material Level Sensor (electronic dipstick) is a sensor based on time domain reflectometry (TDR) of very short electrical pulses. Pulses are propagated along a transmission line or guide wire that is partially immersed in the material being measured; a launcher plate is positioned at the beginning of the guide wire. Reflected pulses are produced at the material interface due to the change in dielectric constant. The time difference of the reflections at the launcher plate and at the material interface are used to determine the material level. Improved performance is obtained by the incorporation of: (1) a high accuracy time base that is referenced to a quartz crystal, (2) an ultrawideband directional sampler to allow operation without an interconnect cable between the electronics module and the guide wire, (3) constant fraction discriminators (CFDs) that allow accurate measurements regardless of material dielectric constants, and reduce or eliminate errors induced by triple-transit or ``ghost`` reflections on the interconnect cable. These improvements make the dipstick accurate to better than 0.1%. 4 figs.

High accuracy electronic material level sensor

DOEpatents

McEwan, Thomas E.

1997-01-01

The High Accuracy Electronic Material Level Sensor (electronic dipstick) is a sensor based on time domain reflectometry (TDR) of very short electrical pulses. Pulses are propagated along a transmission line or guide wire that is partially immersed in the material being measured; a launcher plate is positioned at the beginning of the guide wire. Reflected pulses are produced at the material interface due to the change in dielectric constant. The time difference of the reflections at the launcher plate and at the material interface are used to determine the material level. Improved performance is obtained by the incorporation of: 1) a high accuracy time base that is referenced to a quartz crystal, 2) an ultrawideband directional sampler to allow operation without an interconnect cable between the electronics module and the guide wire, 3) constant fraction discriminators (CFDs) that allow accurate measurements regardless of material dielectric constants, and reduce or eliminate errors induced by triple-transit or "ghost" reflections on the interconnect cable. These improvements make the dipstick accurate to better than 0.1%.

Dielectric and transport properties of CaTiO3

NASA Astrophysics Data System (ADS)

Bhadala, Falguni; Suthar, Lokesh; Roy, M.; Jha, Vikash Kumar

2018-05-01

The ceramic sample of CaTiO3 (CTO) has been prepared by standard high temperature solid state reaction method using high purity oxides. The formation of the compound as well as structural analysis has been carried out by X-ray diffraction method. The dielectric constant and dielectric loss as a function of frequency (20kHz-10MHz) and temperature (RT-490K) have been measured. The dc conductivity has been measured and activation energy was calculated using the Arrhenius relation. The Enthalpy change (ΔH), Specific heat and Weight-loss of the compound have been measured using DTA/TGA techniques. The results are discussed in detail.

The Effect of Multi Wall Carbon Nanotubes on Some Physical Properties of Epoxy Matrix

NASA Astrophysics Data System (ADS)

Al-Saadi, Tagreed M.; hammed Aleabi, Suad; Al-Obodi, Entisar E.; Abdul-Jabbar Abbas, Hadeel

2018-05-01

This research involves using epoxy resin as a matrix for making a composite material, while the multi wall carbon nanotubes (MWNCTs) is used as a reinforcing material with different fractions (0.0,0.02, 0.04, 0.06) of the matrix weight. The mechanical ( hardness ), electrical ( dielectric constant, dielectric loss factor, dielectric strength, electrical conductivity ), and thermal properties (thermal conductivity ) were studied. The results showed the increase of hardness, thermal conductivity, electrical conductivity and break down strength with the increase of MWCNT concentration, but the behavior of dielectric loss factor and dielectric constant is opposite that.

Main regularities of SERS on semiconductors and dielectrics

NASA Astrophysics Data System (ADS)

Chelibanov, V. P.; Polubotko, A. M.

2018-04-01

The paper demonstrates that the reason of SERS on dielectrics and semiconductors is the enhancement of the electric field in the regions of the tops of the surface roughness with a very large positive curvature. The enhancement in many ways depends on the dielectric constant of the substrate and is stronger for a larger dielectric constant. The theoretical result points out that on dielectrics and semiconductors it is weaker than on metals. Experimentally it is demonstrated that there are forbidden lines on hydroquinone, adsorbed on TiO2 , which indicate on the existence of strong quadrupole light-molecule interaction in such systems.

Electric Properties of Pb(Sb1/2Nb1/2)O3 PbTiO3 PbZrO3 Ceramics

NASA Astrophysics Data System (ADS)

Kawamura, Yasushi; Ohuchi, Hiromu

1994-09-01

Solid-solution ceramics of ternary system xPb(Sb1/2Nb1/2)O3 yPbTiO3 zPbZrO3 were prepared by the solid-state reaction of powder materials. Ceramic, electric, dielectric and piezoelectric properties and crystal structures of the system were studied. Sintering of the system xPb(Sb1/2Nb1/2)O3 yPbTiO3 zPbZrO3 is much easier than that of each end composition, and well-sintered high-density ceramics were obtained for the compositions near the morphotropic transformation. Piezoelectric ceramics with high relative dielectric constants, high radial coupling coefficient and low resonant resistance were obtained for the composition near the morphotropic transformation. The composition Pb(Sb1/2Nb1/2)0.075Ti0.45Zr0.475O3 showed the highest dielectric constant (ɛr=1690), and the composition Pb(Sb1/2Nb1/2)0.05Ti0.45Zr0.5O3 showed the highest radial coupling coefficient (kp=64%).

Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

PubMed

Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

2012-04-01

The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (<5 V) pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

Influence of the solid dielectric over the electric field from the ozone cell gap with double dielectric barrier

NASA Astrophysics Data System (ADS)

Ganea, I.

2017-05-01

The distilled water has the advantage of high value dielectric constant (ε = 81) in relation to ceramic glass materials, currently used for constructing the dielectric barrier. It was necessary to build a thin-walled enclosure of solid insulating material that contain distilled water to achieve a dielectric barrier. This was necessary to avoid exposing the liquid to the direct action of ozone. Dielectric permittivity of the solid dielectric material and the thickness of these walls have diminished the value of the electric field form the gaseous gap of the ozone cell compared to the case with the dielectric barrier from distilled water. The author of this work deduced theoretical relationships that express the values of the electric field intensity in the gap of the cell with two dielectrics and compared them with similar relationships of the intensity of the electric field from the gap of the ozone cell with one dielectric. In this work the author presenting experimental results which confirm the theoretical deducting regarding the use of the solid dielectric as enclosure for the liquid dielectric.

Spatially resolved dielectric constant of confined water and its connection to the non-local nature of bulk water

NASA Astrophysics Data System (ADS)

Schaaf, Christian; Gekle, Stephan

2016-08-01

We use molecular dynamics simulations to compute the spatially resolved static dielectric constant of water in cylindrical and spherical nanopores as occurring, e.g., in protein water pockets or carbon nanotubes. For this, we derive a linear-response formalism which correctly takes into account the dielectric boundary conditions in the considered geometries. We find that in cylindrical confinement, the axial component behaves similar as the local density akin to what is known near planar interfaces. The radial dielectric constant shows some oscillatory features when approaching the surface if their radius is larger than about 2 nm. Most importantly, however, the radial component exhibits pronounced oscillations at the center of the cavity. These surprising features are traced back quantitatively to the non-local dielectric nature of bulk water.

Atomic Layer Engineering of High-κ Ferroelectricity in 2D Perovskites.

PubMed

Li, Bao-Wen; Osada, Minoru; Kim, Yoon-Hyun; Ebina, Yasuo; Akatsuka, Kosho; Sasaki, Takayoshi

2017-08-09

Complex perovskite oxides offer tremendous potential for controlling their rich variety of electronic properties, including high-T C superconductivity, high-κ ferroelectricity, and quantum magnetism. Atomic-scale control of these intriguing properties in ultrathin perovskites is an important challenge for exploring new physics and device functionality at atomic dimensions. Here, we demonstrate atomic-scale engineering of dielectric responses using two-dimensional (2D) homologous perovskite nanosheets (Ca 2 Na m-3 Nb m O 3m+1 ; m = 3-6). In this homologous 2D material, the thickness of the perovskite layers can be incrementally controlled by changing m, and such atomic layer engineering enhances the high-κ dielectric response and local ferroelectric instability. The end member (m = 6) attains a high dielectric constant of ∼470, which is the highest among all known dielectrics in the ultrathin region (<10 nm). These results provide a new strategy for achieving high-κ ferroelectrics for use in ultrascaled high-density capacitors and post-graphene technology.

Electrostatic contribution to the binding stability of protein-protein complexes.

PubMed

Dong, Feng; Zhou, Huan-Xiang

2006-10-01

To investigate roles of electrostatic interactions in protein binding stability, electrostatic calculations were carried out on a set of 64 mutations over six protein-protein complexes. These mutations alter polar interactions across the interface and were selected for putative dominance of electrostatic contributions to the binding stability. Three protocols of implementing the Poisson-Boltzmann model were tested. In vdW4 the dielectric boundary between the protein low dielectric and the solvent high dielectric is defined as the protein van der Waals surface and the protein dielectric constant is set to 4. In SE4 and SE20, the dielectric boundary is defined as the surface of the protein interior inaccessible to a 1.4-A solvent probe, and the protein dielectric constant is set to 4 and 20, respectively. In line with earlier studies on the barnase-barstar complex, the vdW4 results on the large set of mutations showed the closest agreement with experimental data. The agreement between vdW4 and experiment supports the contention of dominant electrostatic contributions for the mutations, but their differences also suggest van der Waals and hydrophobic contributions. The results presented here will serve as a guide for future refinement in electrostatic calculation and inclusion of nonelectrostatic effects. Proteins 2006. (c) 2006 Wiley-Liss, Inc.

Magnetic and dielectric properties of Co doped nano crystalline Li ferrites by auto combustion method

NASA Astrophysics Data System (ADS)

Aravind, G.; Raghasudha, M.; Ravinder, D.; Kumar, R. Vijaya

2016-05-01

The ultra fine particles of the cobalt substituted lithium ferrites with the formula [Li0.5Fe0.5]1-xCoxFe2O4 (0.0≤x≤1.0) were synthesized by low temperature citrate-gel auto combustion method. Structural characterization of the samples was carried out using XRD studies and FESEM (Field Emission Scanning Electron Microscopy) analysis. XRD studies confirms the formation of single phased spinel structure with crystallite size in the range of 36-43 nm. The M-H loops have been traced using Vibrating Sample Magnetometer (VSM) for all the compositions at room temperature and hysteresis parameters were evaluated. The hysteresis loops of the prepared samples show clear saturation at an applied field of ±20 k Oe and the loops were highly symmetric in nature. The dielectric parameters such as dielectric constant (ε'), dielectric loss tangent (tan δ) of the samples were studied as a function of frequency in the range of 20 Hz to 2 MHz at room temperature using LCR Meter. The dielectric constant and loss tangent of the samples show a normal dielectric behavior with frequency which reveals that the dispersion is due to the Maxwell-Wagner type interfacial polarization and hopping of electrons between the Fe2+ and Fe3+ ions.

Liquid Metals: Stretchable, High-k Dielectric Elastomers through Liquid-Metal Inclusions (Adv. Mater. 19/2016).

PubMed

Bartlett, Michael D; Fassler, Andrew; Kazem, Navid; Markvicka, Eric J; Mandal, Pratiti; Majidi, Carmel

2016-05-01

An all-soft-matter composite consisting of liquid metal microdroplets embedded in a soft elastomer matrix is presented by C. Majidi and co-workers on page 3726. This composite exhibits a high dielectric constant while maintaining exceptional elasticity and compliance. The image shows the composite's microstructure captured by 3D X-ray imaging using a nano-computed tomographic scanner. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The fluid mechanics of continuous flow electrophoresis

NASA Technical Reports Server (NTRS)

Saville, D. A.

1990-01-01

The overall objective is to establish theoretically and confirm experimentally the ultimate capabilities of continuous flow electrophoresis chambers operating in an environment essentially free of particle sedimentation and buoyancy. The efforts are devoted to: (1) studying the effects of particle concentration on sample conductivity and dielectric constant. The dielectric constant and conductivity were identified as playing crucial roles in the behavior of the sample and on the resolving power and throughput of continuous flow devices; and (2) improving the extant mathematical models to predict flow fields and particle trajectories in continuous flow electrophoresis. A dielectric spectrometer was designed and built to measure the complex dielectric constant of a colloidal dispersion as a function of frequency between 500 Hz and 200 kHz. The real part of the signal can be related to the sample's conductivity and the imaginary part to its dielectric constant. Measurements of the dielectric constants of several different dispersions disclosed that the dielectric constants of dilute systems of the sort encountered in particle electrophoresis are much larger than would be expected based on the extant theory. Experiments were carried out to show that, in many cases, this behavior is due to the presence of a filamentary structure of small hairs on the particle surface. A technique for producing electrokinetically ideal synthetic latex particles by heat treating was developed. Given the ubiquitous nature of hairy surfaces with both cells and synthetic particles, it was deemed necessary to develop a theory to explain their behavior. A theory for electrophoretic mobility of hairy particles was developed. Finally, the extant computer programs for predicting the structure of electro-osmotically driven flows were extended to encompass flow channels with variable wall mobilities.

Temperature and pressure effects on capacitance probe cryogenic liquid level measurement accuracy

NASA Technical Reports Server (NTRS)

Edwards, Lawrence G.; Haberbusch, Mark

1993-01-01

The inaccuracies of liquid nitrogen and liquid hydrogen level measurements by use of a coaxial capacitance probe were investigated as a function of fluid temperatures and pressures. Significant liquid level measurement errors were found to occur due to the changes in the fluids dielectric constants which develop over the operating temperature and pressure ranges of the cryogenic storage tanks. The level measurement inaccuracies can be reduced by using fluid dielectric correction factors based on measured fluid temperatures and pressures. The errors in the corrected liquid level measurements were estimated based on the reported calibration errors of the temperature and pressure measurement systems. Experimental liquid nitrogen (LN2) and liquid hydrogen (LH2) level measurements were obtained using the calibrated capacitance probe equations and also by the dielectric constant correction factor method. The liquid levels obtained by the capacitance probe for the two methods were compared with the liquid level estimated from the fluid temperature profiles. Results show that the dielectric constant corrected liquid levels agreed within 0.5 percent of the temperature profile estimated liquid level. The uncorrected dielectric constant capacitance liquid level measurements deviated from the temperature profile level by more than 5 percent. This paper identifies the magnitude of liquid level measurement error that can occur for LN2 and LH2 fluids due to temperature and pressure effects on the dielectric constants over the tank storage conditions from 5 to 40 psia. A method of reducing the level measurement errors by using dielectric constant correction factors based on fluid temperature and pressure measurements is derived. The improved accuracy by use of the correction factors is experimentally verified by comparing liquid levels derived from fluid temperature profiles.

Effect of NiO and Light Intensity on Dielectric Constant of SiO2-B2O3-Bi2O3-Na2CO3 Glass Based on Silica Gel of Natural Sands

NASA Astrophysics Data System (ADS)

Diantoro, M.; Muniroh, Z.; Zaini, B.; Mustikasari, A. A.; Nasikhudin; Hidayat, A.; Taufiq, A.; Sunaryono; Mufti, N.

2017-05-01

The use of silica in various fields is significantly increasing. One common application is silica based functional glass which has naturally show specific dielectric, optical, and magnetic properties. Many studies have been performing to explore the influence of dopant, composition, and other processing parameters as well as employing various characterization. In the previous work, we report the use of silica from silica sands. To reduce the melting temperature, we used silica sol-gel beside the utilization of some oxides such as B2O3, Na2CO3, and Bi3O3. We also used NiO as dopant explore the glass properties. We have prepared a series of sample with the composition of 50SiO2-25B2O3-(6.5-x) Bi3O3-18.5 Na2CO3-xNiO (x = 0, 1, 2, 3 and 4 wt%). After weighting process, the composition was blended, then heated to 450 °C for 120 minutes and then raised at 950 °C for 60 minutes in the crucible. Then samples of glass separated from the crucible and in the characterization of the structure using the DTA, XRD, SEM-EDAX and FTIR and measuring dielectric constant using a capacitance meter. The increase of NiO dopant resulted in increasing the dielectric constant of glass. On the other hand, the dielectric constant gradually decreases with the increase of light intensity. One can be noted that the applied intensity give rise to the step-like decrease of the dielectric constant. Whereas, the increasing magnetic field indicate the increase of dielectric constant.

Evaluation of high temperature capacitor dielectrics

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad N.; Myers, Ira T.

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

NASA Astrophysics Data System (ADS)

Scott, Ethan A.; Gaskins, John T.; King, Sean W.; Hopkins, Patrick E.

2018-05-01

The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has allowed for their widespread use in a swath of optical, optoelectronic, and electronic devices, including integration into CMOS compatible platforms. As the thickness of these dielectric layers is reduced, the interfacial thermal resistance can dictate the overall thermal resistance of the material stack compared to the resistance due to the finite dielectric layer thickness. Time domain thermoreflectance is used to interrogate both the thermal conductivity and the thermal boundary resistance of aluminum oxide, hafnium oxide, and titanium oxide films on silicon. We calculate a representative design map of effective thermal resistances, including those of the dielectric layers and boundary resistances, as a function of dielectric layer thickness, which will be of great importance in predicting the thermal resistances of current and future devices.

Evaluation of high temperature capacitor dielectrics

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad N.; Myers, Ira T.

1992-01-01

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

High temperature dielectric studies of indium-substituted NiCuZn nanoferrites

NASA Astrophysics Data System (ADS)

Hashim, Mohd.; Raghasudha, M.; Shah, Jyoti; Shirsath, Sagar E.; Ravinder, D.; Kumar, Shalendra; Meena, Sher Singh; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

2018-01-01

In this study, indium (In3+)-substituted NiCuZn nanostructured ceramic ferrites with a chemical composition of Ni0.5Cu0.25Zn0.25Fe2-xInxO4 (0.0 ≤ x ≤ 0.5) were prepared by chemical synthesis involving sol-gel chemistry. Single phased cubic spinel structure materials were prepared successfully according to X-ray diffraction and transmission electron microscopy analyses. The dielectric properties of the prepared ferrites were measured using an LCR HiTester at temperatures ranging from room temperature to 300 °C at different frequencies from 102 Hz to 5 × 106 Hz. The variations in the dielectric parameters ε‧ and (tanδ) with temperature demonstrated the frequency- and temperature-dependent characteristics due to electron hopping between the ions. The materials had low dielectric loss values in the high frequency range at all temperatures, which makes them suitable for high frequency microwave applications. A qualitative explanation is provided for the dependences of the dielectric constant and dielectric loss tangent on the frequency, temperature, and composition. Mӧssbauer spectroscopy was employed at room temperature to characterize the magnetic behavior.

Nanostructure and strain effects in active thin films for novel electronic device applications

NASA Astrophysics Data System (ADS)

Yuan, Zheng

2007-12-01

There are many potential applications of ferroelectric thin films that take advantage of their unique dielectric and piezoelectric properties, such as tunable microwave devices and thin-film active sensors for structural health monitoring (SHM). However, many technical issues still restrict practical applications of ferroelectric thin films, including high insertion loss, limited figure of merit, soft mode effect, large temperature coefficients, and others. The main theme of this thesis is the advanced technique developments, and the new ferroelectric thin films syntheses and investigations for novel device applications. A novel method of additional doping has been adopted to (Ba,Sr)TiO 3 (BSTO) thin films on MgO. By introducing 2% Mn into the stoichiometric BSTO, Mn:BSTO thin films have shown a greatly enhanced dielectric tunability and a reduced insertion loss at high frequencies (10-30 GHz). A new record of a large tunability of 80% with a high dielectric constant of 3800 and an extra low dielectric loss of 0.001 at 1 MHz at room-temperature was achieved. Meanwhile, the new highly epitaxial ferroelectric (Pb,Sr)TiO3 (PSTO) thin films have been synthesized on (001) MgO substrates. PSTO films demonstrated excellent high frequency dielectric properties with high dielectric constants above 1420 and large dielectric tunabilities above 34% at room-temperature up to 20 GHz. In addition, a smaller temperature coefficient from 80 K to 300 K was observed in PSTO films compared to BSTO films. These results indicate that the Mn:BSTO and PSTO films are both good candidates for developing room-temperature tunable microwave devices. Furthermore, crystalline ferroelectric BaTiO3 (BTO) thin films have been deposited directly on metal substrate Ni through a unique in-situ substrate pre-oxidation treatment. The highly oriented nanopillar structural BTO films were grown on the buffered layers created by the pre-oxidation treatment. No interdiffusion or reaction was observed at the interface. As-grown BTO films demonstrated good ferroelectric properties and an extremely large piezoelectric response of 130 (x 10-12 C/N). These excellent preliminary results enable the long-term perspective on the unobtrusive ferroelectric thin-film active sensors for SHM applications.

Optical and microwave dielectric properties of pulsed laser deposited Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joseph, Andrews; Goud, J. Pundareekam; Raju, K. C. James

2016-05-23

Optical properties of pulsed laser deposited (PLD) sodium bismuth titanate thin films (NBT), are investigated at wavelengths of 190-2500 nm. Microwave dielectric properties were investigated using the Split Post Dielectric Resonator (SPDR) technique. At 10 GHz, the NBT films have a dielectric constant of 205 and loss tangent of 0.0373 at room temperature. The optical spectra analysis reveals that NBT thin films have an optical band gap E{sub g}=3.55 eV and it has a dielectric constant of 3.37 at 1000 nm with dielectric loss of 0.299. Hence, NBT is a promising candidate for photonic device applications.

Increased dielectric constant in the water treated by extremely low frequency electromagnetic field and its possible biological implication

NASA Astrophysics Data System (ADS)

Shen, Xun

2011-12-01

Water is the most abundant compound on the surface of the Earth, and can be considered to be the most important molecule in living systems. Water plays a variety of cellular functions, being the solvent of most biological molecules, a substrate and product of enzymatic catalysis, an important component of macromolecules, and more. Because of importance of water in life, many physical and chemical treatments were invented to improve the quality of drinking water. Among them, the treatment with electromagnetic field is a well-known, but much debatable physical method. Although electromagnetic field has been utilized for treating water for 80 years, many reports on beneficial biological effect of electromagnetic field-treated water were either anecdotal or less convincing. To explore if there is any physical base for understanding possible biological effects of electromagnetic field-treated water, dielectric relaxation spectra of deionized water treated with an extremely low frequency electromagnetic (ELFEM) field were measured and compared with that of untreated water. It was surprisingly found that the dielectric constant of the ELFEM field-treated water was 3.7% higher than the control over the frequency range of 1-10 GHz, which indicates a higher molecular polarization occurs in the ELFEM field-treated water. Electrostatic and thermodynamic analysis shows that proteins or other biomacromolecules would have more reduced free energy when they are hydrated in high dielectric constant water. Since free energy is of crucial importance for stability of proteins, protein folding and its conformational change, as well as catalytic activity of enzymes, the free energy reduction of the biomacromolecules hydrated with higher dielectric constant water may be responsible for many possible biological effects of electromagnetic field treated water.

Improving Dielectric Properties of PVDF Composites by Employing Surface Modified Strong Polarized BaTiO₃ Particles Derived by Molten Salt Method.

PubMed

Fu, Jing; Hou, Yudong; Zheng, Mupeng; Wei, Qiaoyi; Zhu, Mankang; Yan, Hui

2015-11-11

BaTiO3/polyvinylidene fluoride (BT/PVDF) is the extensive reported composite material for application in modern electric devices. However, there still exists some obstacles prohibiting the further improvement of dielectric performance, such as poor interfacial compatibility and low dielectric constant. Therefore, in depth study of the size dependent polarization and surface modification of BT particle is of technological importance in developing high performance BT/PVDF composites. Here, a facile molten-salt synthetic method has been applied to prepare different grain sized BT particles through tailoring the calcination temperature. The size dependent spontaneous polarizationof BT particle was thoroughly investigated by theoretical calculation based on powder X-ray diffraction Rietveld refinement data. The results revealed that 600 nm sized BT particles possess the strong polarization, ascribing to the ferroelectric size effect. Furthermore, the surface of optimal BT particles has been modified by water-soluble polyvinylprrolidone (PVP) agent, and the coated particles exhibited fine core-shell structure and homogeneous dispersion in the PVDF matrix. The dielectric constant of the resulted composites increased significantly, especially, the prepared composite with 40 vol % BT loading exhibited the largest dielectric constant (65, 25 °C, 1 kHz) compared with the literature values of BT/PVDF at the same concentration of filler. Moreover, the energy storage density of the composites with tailored structure was largely enhanced at the low electric field, showing promising application as dielectric material in energy storage device. Our work suggested that introduction of strong polarized ferroelectric particles with optimal size and construction of core-shell structured coated fillers by PVP in the PVDF matrix are efficacious in improving dielectric performance of composites. The demonstrated approach can also be applied to the design and preparation of other polymers-based nanocomposites filled with ferroelectric particles to achieve desirable dielectric properties.

Dielectric method of high-resolution gas hydrate estimation

NASA Astrophysics Data System (ADS)

Sun, Y. F.; Goldberg, D.

2005-02-01

In-situ dielectric properties of natural gas hydrate are measured for the first time in the Mallik 5L-38 Well in the Mackenzie Delta, Canada. The average dielectric constant of the hydrate zones is 9, ranging from 5 to 20. The average resistivity is >5 ohm.m in the hydrate zones, ranging from 2 to 10 ohm.m at a 1.1 GHz dielectric tool frequency. The dielectric logs show similar trends with sonic and induction resistivity logs, but exhibits inherently higher vertical resolution (<5 cm). The average in-situ hydrate saturation in the well is about 70%, ranging from 20% to 95%. The dielectric estimates are overall in agreement with induction estimates but the induction log tends to overestimate hydrate content up to 15%. Dielectric estimates could be used as a better proxy of in-situ hydrate saturation in modeling hydrate dynamics. The fine-scale structure in hydrate zones could help reveal hydrate formation history.

Optical and dielectric properties of poly(vinyl-alcohol) - Cobalt oxide nanocomposite film

NASA Astrophysics Data System (ADS)

Das, Amit Kumar; Tripathi, Himadri Sekhar; Meikap, Ajit Kumar

2018-04-01

Highly crystalline cobalt oxide (Co3O4) have been synthesized via calcination method. The crystallite size of the nanoparticles is 28.5 nm. Two direct band gap of Co3O4 is observed. The temperature dependent dielectric spectroscopy of PVA-Co3O4 composite film shows ferroelectric behavior. The dielectric constant of the composite film is almost 2.5 times compare to pure PVA at a 1kHz frequency and room temperature. From the Nyquist plot grain and grain boundary effects are identified.

Dielectric properties of doping-free NaMn{sub 7}O{sub 12}: Origin of the observed colossal dielectric constant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cabassi, R.; Bolzoni, F.; Gauzzi, A.

2006-07-15

The semiconducting NaMn{sub 7}O{sub 12} is a doping-free compound with several coexistent properties such as orbital ordering, charge ordering, and magnetic orderings of different types. We investigated its dielectric response by means of frequency impedance measurements in the range from 20 Hz to 1 MHz. Standard measurements on metallized samples exhibit an apparent colossal dielectric constant (CDC) with an {epsilon}{sub R} value of several thousands at low frequencies, but a careful equivalent circuit analysis allows one to ascribe the observed CDC to the effect of a depletion layer on the metal-semiconductor junctions. We bypass this effect by means of amore » nonstandard technique employing mica linings: the resulting dielectric behavior exhibits the presence of the charge ordering transition at T{sub CO}=176 K and shows a net bulk dielectric constant value {epsilon}{sub R}{approx_equal}68 at room temperature.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahesh, P., E-mail: pamu@iitg.ernet.in; Subhash, T., E-mail: pamu@iitg.ernet.in; Pamu, D., E-mail: pamu@iitg.ernet.in

We report the dielectric properties of (K{sub 0.5}Na{sub 0.5})NbO{sub 3} ceramics doped with x wt% of Dy{sub 2}O{sub 3} (x= 0.0-1.5 wt%) using the broadband dielectric spectroscopy. The X-ray diffraction studies showed the formation of perovskite structure signifying that Dy{sub 2}O{sub 3} diffuse into the KNN lattice. Samples doped with x > 0.5 wt% exhibit smaller grain size and lower relative densities. The dielectric properties of KNN ceramics doped with Dy{sub 2}O{sub 3} are enhanced by increasing the Dy{sup 3+} content; among the compositions studied, x = 0.5 wt% exhibited the highest dielectric constant and lowest loss at 1MHz overmore » the temperature range of 30°C to 400°C. All the samples exhibit maximum dielectric constant at the Curie temperature (∼ 326°C) and a small peak in the dielectric constant at around 165°C is due to a structural phase transition.« less

Origin of the colossal dielectric permittivity and magnetocapacitance in LuFe2O4

NASA Astrophysics Data System (ADS)

Ren, P.; Yang, Z.; Zhu, W. G.; Huan, C. H. A.; Wang, L.

2011-04-01

We report the detailed study on the colossal dielectric constant and magnetocapacitance of LuFe2O4. The experimental results indicate that the large dielectric constant of LuFe2O4 is originated from two sources, (1) Maxwell Wagner-type contributions of depletion layers at grain boundaries and the interfaces between sample and contacts, (2) AC response of the constant phase element in the bulk. A detailed equivalent circuit analysis indicates that the conductivity variation can be responsible for the observed "magnetocapacitance."

Out-of-equilibrium relaxation of the thermal Casimir effect in a model polarizable material

NASA Astrophysics Data System (ADS)

Dean, David S.; Démery, Vincent; Parsegian, V. Adrian; Podgornik, Rudolf

2012-03-01

Relaxation of the thermal Casimir or van der Waals force (the high temperature limit of the Casimir force) for a model dielectric medium is investigated. We start with a model of interacting polarization fields with a dynamics that leads to a frequency dependent dielectric constant of the Debye form. In the static limit, the usual zero frequency Matsubara mode component of the Casimir force is recovered. We then consider the out-of-equilibrium relaxation of the van der Waals force to its equilibrium value when two initially uncorrelated dielectric bodies are brought into sudden proximity. For the interaction between dielectric slabs, it is found that the spatial dependence of the out-of-equilibrium force is the same as the equilibrium one, but it has a time dependent amplitude, or Hamaker coefficient, which increases in time to its equilibrium value. The final relaxation of the force to its equilibrium value is exponential in systems with a single or finite number of polarization field relaxation times. However, in systems, such as those described by the Havriliak-Negami dielectric constant with a broad distribution of relaxation times, we observe a much slower power law decay to the equilibrium value.

Size-dependent Hamaker constants for silver and gold nanoparticles

NASA Astrophysics Data System (ADS)

Pinchuk, Pavlo; Jiang, Ke

2015-08-01

Hamaker-Lifshitz constants are material specific constants that are used to calculate van der Waals interaction forces between small particles in solution. Typically, these constants are size-independent and material specific. According to the Lifshitz theory, the Hamaker-Lifshitz constants can be calculated by taking integrals that include the dielectric permittivity, as a function of frequency, of the interacting particles and the medium around particles. The dielectric permittivity of interacting metal nanoparticles can be calculated using the Drude model, which is based on the assumption of motion of free conducting electrons. For bulk metals, the Drude model does not predict any sizedependence of the dielectric permittivity. However, the conducting electrons in small noble metal nanoparticles (R ~ 10nm) exhibit surface scattering, which changes the complex permittivity function. In this work, we show theoretically that scattering of the free conducting electrons inside silver and gold nanoparticles with the size of 1 - 50 nm leads to size-dependent dielectric permittivity and Hamaker-Lifshitz constants. We calculate numerically the Hamaker-Lifshitz constants for silver and gold nanoparticles with different diameters. The results of the study might be of interests for understanding colloidal stability of metal nanoparticles.

Effect of the addition of B{sub 2}O{sub 3} and BaO-B{sub 2}O{sub 3}-SiO{sub 2} glasses on the microstructure and dielectric properties of giant dielectric constant material CaCu{sub 3}Ti{sub 4}O{sub 12}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shri Prakash, B.; Varma, K.B.R.

2007-06-15

The effect of the addition of glassy phases on the microstructure and dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramics was investigated. Both single-component (B{sub 2}O{sub 3}) and multi-component (30 wt% BaO-60 wt% B{sub 2}O{sub 3}-10 wt% SiO{sub 2} (BBS)) glass systems were chosen to study their effect on the density, microstructure and dielectric properties of CCTO. Addition of an optimum amount of B{sub 2}O{sub 3} glass facilitated grain growth and an increase in dielectric constant. However, further increase in the B{sub 2}O{sub 3} content resulted in its segregation at the grain boundaries associated with a reduction in themore » grain size. In contrast, BBS glass addition resulted in well-faceted grains and increase in the dielectric constant and decrease in the dielectric loss. An internal barrier layer capacitance (IBLC) model was invoked to correlate the dielectric constant with the grain size in these samples. - Graphical abstract: Scanning electron micrograph of 30 wt% BaO-60 wt% B{sub 2}O{sub 3}-10 wt% SiO{sub 2} (BBS) glass-added CaCu{sub 3}Ti{sub 4}O{sub 12} ceramic on sintering.« less

Ab initio molecular dynamics in a finite homogeneous electric field.

PubMed

Umari, P; Pasquarello, Alfredo

2002-10-07

We treat homogeneous electric fields within density functional calculations with periodic boundary conditions. A nonlocal energy functional depending on the applied field is used within an ab initio molecular dynamics scheme. The reliability of the method is demonstrated in the case of bulk MgO for the Born effective charges, and the high- and low-frequency dielectric constants. We evaluate the static dielectric constant by performing a damped molecular dynamics in an electric field and avoiding the calculation of the dynamical matrix. Application of this method to vitreous silica shows good agreement with experiment and illustrates its potential for systems of large size.

A ferroelectric model for the low emissivity highlands on Venus

NASA Technical Reports Server (NTRS)

Shepard, Michael K.; Arvidson, Raymond E.; Brackett, Robert A.; Fegley, Bruce, Jr.

1994-01-01

A model to explain the low emissivity venusian highlands is proposed utilizing the temperature-dependent dielectric constant of ferroelectric minerals. Ferroelectric minerals are known to occur in alkaline and carbonite rocks, both of which are plausible for Venus. Ferroelectric minerals possess extremely high dielectric constants (10(exp 5)) over small temperature intervals and are only required in minor (much less than 1%) abundances to explain the observed emissivities. The ferroelectric model can account for: (1) the observed reduction in emissivity with increased altitude, (2) the abrupt return to normal emissivities at highest elevations, and (3) the variations in the critical elevation observed from region to region.

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics.

PubMed

Alshammari, Fwzah H; Nayak, Pradipta K; Wang, Zhenwei; Alshareef, Husam N

2016-09-07

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm(2) V(-1) s(-1), but increased to 13.3 cm(2) V(-1) s(-1) using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance.

An Improved Dielectric Constant Cell for Use in Student and Research Laboratories.

ERIC Educational Resources Information Center

Thompson, H. Bradford.; Walmsley, Judith A.

1979-01-01

Describes the latest stage in the design of an economical dielectric constant cell, tested in both instructional and research applications, that is suitable for student laboratories and for precision research measurements. (BT)

Advanced concepts for transformers pressboard dielectric constant and mechanical strength

NASA Astrophysics Data System (ADS)

1982-03-01

Of the numerous electrical considerations in a material, the value of the dielectric constant serves as an important criterion in designing proper insulation systems. Ways to reduce the dielectric constant of solid (fibrous) insulating materials were investigated. A literature search was made on cellulosic and synthetic fibers and also additives which offered the potential for dielectric constant reduction of the solid insulation. Sample board structures were produced in the laboratory and tested for electrical, mechanical and chemical characteristics. Electrical tests determined the suitability of the material at transformer test and operating conditions. The mechanical tests established the physical characteristics of the modified board structures. Chemical tests checked the conductivity of the aqueous extract, acidity, and ash content. Further, compatibility with transformer oil and some aging tests were performed. An actual computer transformer design was made based on one of the modified board structures and the reduction in core steel and transformer losses were shown.

Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt /Ti/SiO2/Si substrates

NASA Astrophysics Data System (ADS)

Zhai, Jiwei; Yao, Xi; Xu, Zhengkui; Chen, Haydn

2006-08-01

Thin films of ferroelectric PbxSr1-xTiO3 (PST) with x =0.3-0.7 and graded composition were fabricated on LaNiO3 buffered Pt /Ti/SiO2/Si substrates by a sol-gel deposition method. The thin films crystallized into a single perovskite structure and exhibited highly (100) preferred orientation after postdeposition annealing at 650°C. The grain size of PST thin films systematically decreased with the increase of Sr content. Dielectric and ferroelectric properties were investigated as a function of temperature, frequency, and dc applied field. Pb0.6Sr0.4TiO3 films showed a dominant voltage dependence of dielectric constant with a high tunability in a temperature range of 25-230°C. The compositionally graded PST thin films with x =0.3-0.6 also showed the high tunability. The graded thin films exhibited a diffused phase transition accompanied by a diffused peak in the temperature variations of dielectric constants. This kind of thin films has a potential in a fabrication of a temperature stable tunable device.

Reflection and Refraction of Light in Absorbing Media

NASA Astrophysics Data System (ADS)

Katsumata, Koichi; Sasaki, Shosuke

2018-05-01

The results of a rigorous calculation of optical phenomena in absorbing media based on Maxwell's equations are reported. In the case of an absorbing dielectric, we assume a complex dielectric constant. We find an expression for the angle of refraction as a function of the incident angle and the real and imaginary parts of the complex dielectric constant, all of which are real. The amplitudes of the reflected and transmitted waves are calculated on the same footing. These amplitudes are shown to be complex, from which we deduce the magnitude and phase change of the reflection and transmission coefficients. The same argument applies to an absorbing magnetic material if we replace the complex dielectric constant by a complex magnetic permeability.

Synthesis, integration, and characterization of metal oxide films as alternative gate dielectric materials

NASA Astrophysics Data System (ADS)

Lin, You-Sheng

ZrO2 and HfO2 were investigated in this study to replace SiO2 as the potential gate dielectric materials in metal-oxide-semiconductor field effect transistors. ZrO2 and HfO2 films were deposited on p-type Si (100) wafers by an atomic layer chemical vapor deposition (ALCVD) process using zirconium (IV) t-butoxide and hafnium (IV) t-butoxide as the metal precursors, respectively. Oxygen was used alternatively with these metal alkoxide precursors into the reactor with purging and evacuation in between. The as-deposited ZrO2 and HfO2 films were stoichiometric and uniform based on X-ray photoemission spectroscopy and ellipsometry measurements. X-ray diffraction analysis indicated that the deposited films were amorphous, however, the high-resolution transmission electron microscopy showed an interfacial layer formation on the silicon substrate. Time-of-flight secondary ion mass spectrometry and medium energy ion scattering analysis showed significant intermixing between metal oxides and Si, indicating the formation of metal silicates, which were confirmed by their chemical etching resistance in HF solutions. The thermal stability of ZrO2 and HfO2 thin films on silicon was examined by monitoring their decomposition temperatures in ultra-high vacuum, using in-situ synchrotron radiation ultra-violet photoemission spectroscopy. The as-deposited ZrO2 and HfO2 thin films were thermally stable up to 880°C and 950°C in vacuum, respectively. The highest achieveable dielectric constants of as-deposited ZrO 2 and HfO2 were 21 and 24, respectively, which were slightly lower than the reported dielectric constants of bulk ZrO2 and HfO 2. These slight reductions in dielectric constants were attributed to the formation of the interfacial metal silicate layers. Very small hysteresis and interface state density were observed for both metal oxide films. Their leakage currents were a few orders of magnitude lower than that of SiO 2 at the same equivalent oxide thickness. NMOSFETs were also fabricated with the as-deposited metal oxide films, and reasonable ID-V D and IG-VG results were obtained. The electron mobilities were high from devices built using a plasma etching process to pattern the metal oxide films. However, they can be degraded if an HF wet etching process was used due to the large contact resistences. Upon oxygen annealing, the formation of SiOx at the interface improved the thermal stability of the as-deposited metal oxide films, however, lower overall dielectric constant and higher leakage current were observed. Upon ammonia annealing, the formation of SiOxNy improved not only the thermal stability but also reduced the leakage current. However, the overall dielectric constant of the film was still reduced due to the formation of the additional interfacial layer.

Effects of Cr/Zn Substitutions on Dielectric Properties of CaCu{sub 3}Ti{sub 4}O{sub 12}(CCTO) Ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajmi, R.; Yahya, A. K.; Deni, M. S. M.

2010-07-07

Effects of Zn and Cr substitutions on dielectric properties of CaCu{sub 3-x}Zn{sub x}Ti{sub 4-y}Cr{sub y}O{sub 12} ceramics are reported. Dielectric measurements at room temperature for un-substituted CaCu{sub 3-x}Zn{sub x}Ti{sub 4-y}Cr{sub y}O{sub 12}(x = 0, y = 0) between 10{sup 2}-10{sup 6} Hz showed dielectric constant of 2.7x10{sup 4} at 10{sup 2} Hz. Substitution of Zn for Cu in CaCu{sub 3-x}Zn{sub xTi{sub 4{sub -{sub yCr{sub yO{sub 1{sub 2}}}}}}}(y = 0, x = 0.10, 0.50)caused dielectric constant to drop with increasing x. Cr substitution at Ti-site in CaCu{sub 3-x}Zn{sub xTi{sub 4{sub -{sub yCr{sub yO{sub 1{sub 2}}}}}}}(x = 0, x = 0,) alsomore » caused decrease in dielectric constant. However, at x = 0.50, the dielectric constant at low frequency was enhanced compared to the un-substituted sample. Our results indicate that Cu and Ti sites play an important role in the formation of Internal Barrier Layer Capacitance (IBLC) in CCTO.« less

Dielectric constant of ionic solutions: a field-theory approach.

PubMed

Levy, Amir; Andelman, David; Orland, Henri

2012-06-01

We study the variation of the dielectric response of a dielectric liquid (e.g. water) when a salt is added to the solution. Employing field-theoretical methods, we expand the Gibbs free energy to first order in a loop expansion and calculate self-consistently the dielectric constant. We predict analytically the dielectric decrement which depends on the ionic strength in a complex way. Furthermore, a qualitative description of the hydration shell is found and is characterized by a single length scale. Our prediction fits rather well a large range of concentrations for different salts using only one fit parameter related to the size of ions and dipoles.

Reversible dielectric property degradation in moisture-contaminated fiber-reinforced laminates

NASA Astrophysics Data System (ADS)

Rodriguez, Luis A.; García, Carla; Fittipaldi, Mauro; Grace, Landon R.

2016-03-01

The potential for recovery of dielectric properties of three water-contaminated fiber-reinforced laminates is investigated using a split-post dielectric resonant technique at X-band (10 GHz). The three material systems investigated are bismaleimide (BMI) reinforced with an eight-harness satin weave quartz fabric, an epoxy resin reinforced with an eight- harness satin weave glass fabric (style 7781), and the same epoxy reinforced with a four-harness woven glass fabric (style 4180). A direct correlation between moisture content, dielectric constant, and loss tangent was observed during moisture absorption by immersion in distilled water at 25 °C for five equivalent samples of each material system. This trend is observed through at least 0.72% water content by weight for all three systems. The absorption of water into the BMI, 7781 epoxy, and 4180 epoxy laminates resulted in a 4.66%, 3.35%, and 4.01% increase in dielectric constant for a 0.679%, 0.608%, and 0.719% increase in water content by weight, respectively. Likewise, a significant increase was noticed in loss tangent for each material. The same water content is responsible for a 228%, 71.4%, and 64.1% increase in loss tangent, respectively. Subsequent to full desorption through drying at elevated temperature, the dielectric constant and loss tangent of each laminate exhibited minimal change from the dry, pre-absorption state. The dielectric constant and loss tangent change after the absorption and desorption cycle, relative to the initial state, was 0.144 % and 2.63% in the BMI, 0.084% and 1.71% in the style 7781 epoxy, and 0.003% and 4.51% in the style 4180 epoxy at near-zero moisture content. The similarity of dielectric constant and loss tangent in samples prior to absorption and after desorption suggests that any chemical or morphological changes induced by the presence of water have not caused irreversible changes in the dielectric properties of the laminates.

Effect of fiber content on the thermal conductivity and dielectric constant of hair fiber reinforced epoxy composite

NASA Astrophysics Data System (ADS)

Prasad Nanda, Bishnu; Satapathy, Alok

2018-03-01

This paper reports on the dielectric and thermal properties of hair fibers reinforced epoxy composites. Hair is an important part of human body which also offers protection to the human body. It is also viewed as a biological waste which is responsible for creating environmental pollution due to its low decomposition rate. But at the same time it has unique microstructural, mechanical and thermal properties. In the present work, epoxy composites are made by solution casting method with different proportions of short hair fiber (SHF). Effects of fiber content on the thermal conductivity and dielectric constant of epoxy resin are studied. Thermal conductivities of the composites are obtained using a UnithermTM Model 2022 tester. An HIOKI-3532-50 Hi Tester Elsier Analyzer is used for measuring the capacitance of the epoxy-SHF composite, from which dielectric constant (Dk) of the composite are calculated. A reduction in thermal conductivity of the composite is noticed with the increase in wt. % of fiber. The dielectric constant value of the composites also found to be significantly affected by the fiber content.

High internal free volume compositions for low-k dielectric and other applications

NASA Technical Reports Server (NTRS)

Bouffard, Jean (Inventor); Swager, Timothy M. (Inventor)

2010-01-01

The present invention provides materials, devices, and methods involving new heterocyclic, shape-persistent monomeric units with internal free volume. In some cases, materials the present invention may comprise monomers, oligomers, or polymers that incorporate a heterocyclic, shape-persistent iptycene. The present invention may provide materials having low dielectric constants and improved stability at high operating temperatures due to the electron-poor character of materials. In addition, compositions of the invention may be easily synthesized and readily modified to suit a particular application.

Recent Progress on Ferroelectric Polymer-Based Nanocomposites for High Energy Density Capacitors: Synthesis, Dielectric Properties, and Future Aspects.

PubMed

Prateek; Thakur, Vijay Kumar; Gupta, Raju Kumar

2016-04-13

Dielectric polymer nanocomposites are rapidly emerging as novel materials for a number of advanced engineering applications. In this Review, we present a comprehensive review of the use of ferroelectric polymers, especially PVDF and PVDF-based copolymers/blends as potential components in dielectric nanocomposite materials for high energy density capacitor applications. Various parameters like dielectric constant, dielectric loss, breakdown strength, energy density, and flexibility of the polymer nanocomposites have been thoroughly investigated. Fillers with different shapes have been found to cause significant variation in the physical and electrical properties. Generally, one-dimensional and two-dimensional nanofillers with large aspect ratios provide enhanced flexibility versus zero-dimensional fillers. Surface modification of nanomaterials as well as polymers adds flavor to the dielectric properties of the resulting nanocomposites. Nowadays, three-phase nanocomposites with either combination of fillers or polymer matrix help in further improving the dielectric properties as compared to two-phase nanocomposites. Recent research has been focused on altering the dielectric properties of different materials while also maintaining their superior flexibility. Flexible polymer nanocomposites are the best candidates for application in various fields. However, certain challenges still present, which can be solved only by extensive research in this field.

Magnetically tunable liquid dielectric with giant dielectric permittivity based on core-shell superparamagnetic iron oxide.

PubMed

Vinayasree, S; Nitha, T S; Tiwary, C S; Ajayan, P M; Joy, P A; Anantharaman, M R

2018-06-29

A liquid dielectric based on a core-shell architecture having a superparamagnetic iron oxide core and a shell of silicon dioxide was synthesized. The frequency dependence of dielectric properties was evaluated for different concentrations of iron oxide. The dependence of magnetic field on the dielectric properties was also studied. Aqueous ferrofluid exhibited a giant dielectric constant of 6.4 × 10 5 at 0.1 MHz at a concentration of 0.2 vol% and the loss tangent was 3. The large rise in dielectric constant at room temperature is modelled and explained using percolation theory and Maxwell-Wagner-Sillars type polarization. The ferrofluid is presumed to consist of nanocapacitor networks which are wired in series along the lateral direction and parallel along longitudinal direction. On the application of an external magnetic field, the chain formation and its alignment results in the variation of dielectric permittivity.

Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, J.-Y.; Nielsen, M. C.; Rymaszewski, E. J.; Lu, T.-M.

2000-02-01

Room temperature deposition of tantalum oxide films on metallized silicon substrates was investigated by reactive pulsed magnetron sputtering of Ta in an Ar/O2 ambient. The dielectric constant of the tantalum oxide ranged from 19 to 31 depending on the oxygen percentage [P(%)=PO2/(PO2+PAr)] used during sputtering. The leakage current density was less than 10 nA/cm2 at 0.5 MV/cm electric field and the dielectric breakdown field was greater than 3.8 MV/cm for P=60%. A charge storage as high as 3.3 μF/cm2 was achieved for 70-Å-thick film. Pulse frequency variation (from 20 to 200 kHz) did not give a significant effect in the electrical properties (dielectric constant or leakage current density) of the Ta2O5 films.

NASA Astrophysics Data System (ADS)

Wang, Mao-Hua; Ma, Xiao-Yu; Zhang, Bo; Zhou, Fu

2014-11-01

CaCu3Ti4O12 (CCTO) powders coated with carbon were synthesized by using a high-energy ball milling method. The obtained samples were characterized by x-ray diffraction, transmission electron microscopy and scanning electron microscopy. The carbon-coated CCTO particles had a rough surface, which resulted from the growth of the carbon coating on the CCTO particles. It was found that the CCTO phase was observed as the major phase and no reaction occurred between the carbon and CCTO during the sintering process. The grain size of the CCTO ceramics decreased with the increase in carbon content, which indicated that carbon inhibits grain growth of CCTO ceramics. Specially, the dielectric constant decreased with the increase in carbon content. And CCTO1 ceramic (mass ratio of CCTO: carbon = 10:1) showed a lower dielectric constant (3.74 × 104), with the dielectric loss value (0.04) much lower than that of CCTO at 20°C (10 k Hz).

8 MeV electron beam induced modifications in the thermal, structural and electrical properties of nanophase CeO2 for potential electronics applications

NASA Astrophysics Data System (ADS)

Babitha, K. K.; Sreedevi, A.; Priyanka, K. P.; Ganesh, S.; Varghese, Thomas

2018-06-01

The effect of 8 MeV electron beam irradiation on the thermal, structural and electrical properties of CeO2 nanoparticles synthesized by chemical precipitation route was investigated. The dose dependent effect of electron irradiation was studied using various characterization techniques such as, thermogravimetric and differential thermal analyses, X-ray diffraction, Fourier transformed infrared spectroscopy and impedance spectroscopy. Systematic investigation based on the results of structural studies confirm that electron beam irradiation induces defects and particle size variation on CeO2 nanoparticles, which in turn results improvements in AC conductivity, dielectric constant and loss tangent. Structural modifications and high value of dielectric constant for CeO2 nanoparticles due to electron beam irradiation make it as a promising material for the fabrication of gate dielectric in metal oxide semiconductor devices.

Size- and temperature-dependent Hamaker constants for heterogeneous systems of interacting nanoparticles

NASA Astrophysics Data System (ADS)

Pinchuk, P.; Pinchuk, A. O.

2016-09-01

Hamaker-Lifshitz constants are used to calculate van der Waals interaction forces between small particles in solution. Typically, these constants are size-independent and material specific. According to the Lifshitz theory, the Hamaker-Lifshitz constants can be calculated by taking integrals that include the dielectric permittivity, as a function of frequency, of the interacting particles and the medium around particles. The dielectric permittivity of interacting metal nanoparticles can be calculated using the free-electron Drude model for metals. For bulk metals, the Drude model does is size independent. However, the conducting electrons in small metal nanoparticles exhibit surface scattering, which changes the complex dielectric permittivity function. Additionally, the Drude model can be modified to include temperature dependence. That is, an increase in temperature leads to thermal volume expansion and increased phonon population, which affect the scattering rate of the electrons and the plasma frequency. Both of these terms contribute significantly to the Drude model for the dielectric permittivity of the particles. In this work, we show theoretically that scattering of the free conducting electrons inside noble metal nanoparticles with the size of 1 - 50 nm leads to size-dependent dielectric permittivity and Hamaker-Lifshitz constants. In addition, we calculate numerically the Hamaker-Lifshitz constants for a variety of temperatures. The results of the study might be of interest for understanding colloidal stability of metal nanoparticles.

Thermally Stable Siloxane Hybrid Matrix with Low Dielectric Loss for Copper-Clad Laminates for High-Frequency Applications.

PubMed

Kim, Yong Ho; Lim, Young-Woo; Kim, Yun Hyeok; Bae, Byeong-Soo

2016-04-06

We report vinyl-phenyl siloxane hybrid material (VPH) that can be used as a matrix for copper-clad laminates (CCLs) for high-frequency applications. The CCLs, with a VPH matrix fabricated via radical polymerization of resin blend consisting of sol-gel-derived linear vinyl oligosiloxane and bulky siloxane monomer, phenyltris(trimethylsiloxy)silane, achieve low dielectric constant (Dk) and dissipation factor (Df). The CCLs with the VPH matrix exhibit excellent dielectric performance (Dk = 2.75, Df = 0.0015 at 1 GHz) with stability in wide frequency range (1 MHz to 10 GHz) and at high temperature (up to 275 °C). Also, the VPH shows good flame resistance without any additives. These results suggest the potential of the VPH for use in high-speed IC boards.

Magnetic and High-Frequency Dielectric Parameters of Divalent Ion-Substituted W-Type Hexagonal Ferrites

NASA Astrophysics Data System (ADS)

Ali, Akbar; Grössinger, R.; Imran, Muhammad; Khan, M. Ajmal; Elahi, Asmat; Akhtar, Majid Niaz; Mustafa, Ghulam; Khan, Muhammad Azhar; Ullah, Hafeez; Murtaza, Ghulam; Ahmad, Mukhtar

2017-02-01

Polycrystalline W-type hexagonal ferrites with chemical formulae Ba0.5Sr0.5 Co2- x Me x Fe16O27 ( x = 0, 0.5, Me = Mn, Mg, Zn, Ni) have been prepared using sol-gel autocombustion. It has been reported in our earlier published work that all the samples exhibit a single-phase W-type hexagonal structure which was confirmed by x-ray diffraction (XRD) analysis. The values of bulk density lie in the range of 4.64-4.78 g/cm3 for all the samples which are quite high as compared to those for other types of hexaferrites. It was also observed that Zn-substituted ferrite reflects the highest (14.7 × 107 Ω-cm) whereas Mn-substituted ferrite has the lowest (11.3 × 107 Ω-cm) values of direct current (DC) electrical resistivity. The observed values of saturation magnetization ( M s) are found to be in the range of 62.01-68.7 emu/g depending upon the type of cation substitution into the hexagonal lattice. All the samples exhibit a typical soft magnetic character with low values of coercivity ( H c) that are in the range of 26-85 Oe. These ferrites may be promising materials for microwave absorbers due to their higher saturation magnetization and low coercivities. Both the dielectric constant and tangent loss decrease with increasing frequency in the lower frequency region and become constant in the higher frequency region. The much lower dielectric constant obtained in this study makes the investigated ferrites very useful for high-frequency applications, i.e. dielectric resonators and for camouflaging military targets such as ships, tanks and aircrafts, etc.

Cluster synthesis of monodisperse rutile-TiO2 nanoparticles and dielectric TiO2-vinylidene fluoride oligomer nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balasubramanian, B; Kraemer, KL; Valloppilly, SR

2011-09-13

The embedding of oxide nanoparticles in polymer matrices produces a greatly enhanced dielectric response by combining the high dielectric strength and low loss of suitable host polymers with the high electric polarizability of nanoparticles. The fabrication of oxide-polymer nanocomposites with well-controlled distributions of nanoparticles is, however, challenging due to the thermodynamic and kinetic barriers between the polymer matrix and nanoparticle fillers. In the present study, monodisperse TiO2 nanoparticles having an average particle size of 14.4 nm and predominant rutile phase were produced using a cluster-deposition technique without high-temperature thermal annealing and subsequently coated with uniform vinylidene fluoride oligomer (VDFO) moleculesmore » using a thermal evaporation source, prior to deposition as TiO2-VDFO nanocomposite films on suitable substrates. The molecular coatings on TiO2 nanoparticles serve two purposes, namely to prevent the TiO2 nanoparticles from contacting each other and to couple the nanoparticle polarization to the matrix. Parallel-plate capacitors made of TiO2-VDFO nanocomposite film as the dielectric exhibit minimum dielectric dispersion and low dielectric loss. Dielectric measurements also show an enhanced effective dielectric constant in TiO2-VDFO nanocomposites as compared to that of pure VDFO. This study demonstrates for the first time a unique electroactive particle coating in the form of a ferroelectric VDFO that has high-temperature stability as compared to conventionally used polymers for fabricating dielectric oxide-polymer nanocomposites.« less

Non-destructive evaluation method employing dielectric electrostatic ultrasonic transducers

NASA Technical Reports Server (NTRS)

Yost, William T. (Inventor); Cantrell, Jr., John H. (Inventor)

2003-01-01

An acoustic nonlinearity parameter (.beta.) measurement method and system for Non-Destructive Evaluation (NDE) of materials and structural members novelly employs a loosely mounted dielectric electrostatic ultrasonic transducer (DEUT) to receive and convert ultrasonic energy into an electrical signal which can be analyzed to determine the .beta. of the test material. The dielectric material is ferroelectric with a high dielectric constant .di-elect cons.. A computer-controlled measurement system coupled to the DEUT contains an excitation signal generator section and a measurement and analysis section. As a result, the DEUT measures the absolute particle displacement amplitudes in test material, leading to derivation of the nonlinearity parameter (.beta.) without the costly, low field reliability methods of the prior art.

High Performance Composite Dielectric Ink for Ultracapacitors

NASA Technical Reports Server (NTRS)

Rolin, Terry D. (Inventor); Hill, Curtis W. (Inventor)

2017-01-01

The present invention is a dielectric ink and means for printing using said ink. Approximately 10-20% of the ink is a custom organic vehicle made of a polar solvent and a binder. Approximately 30-70% of the ink is a dielectric powder having an average particle diameter of approximately 10-750 nm. Approximately 5-15% of the ink is a dielectric constant glass. Approximately 10-35% of the ink is an additional amount of solvent. The ink is deposited on a printing substrate to form at least one printed product, which is then dried and cured to remove the solvent and binder, respectively. The printed product then undergoes sintering in an inert gas atmosphere.

Highly condensed fluorinated methacrylate hybrid material for transparent low-kappa passivation layer in LCD-TFT.

PubMed

Oh, Ji-Hoon; Kwak, Seung-Yeon; Yang, Seung-Cheol; Bae, Byeong-Soo

2010-03-01

Photocurable and highly condensed fluorinated methacrylate oligosiloxane, with a low dielectric constant (kappa = 2.54), was prepared by a nonhydrolytic sol-gel condensation reaction. The oligosiloxane resin was then spin-coated, photocured, and thermally baked in order to fabricate a fluorinated methacrylate hybrid material (FM hybrimer) thin film. This study investigated the application of this FM hybrimer film as a low-kappa passivation layer in LCD-based thin film transistors (TFT). It was found that a dielectric constant as low as kappa = 2.54 could be obtained, without introducing pores in the dense FM hybrimer films. This study compares FM hybrimer film characteristics with those required for passivation layers in LCD-TFTs, including thermal stability, optical transmittance, hydrophobicity, gap fill, and planarization effects as well as electrical insulation.

Electrical conduction mechanism and dielectric characterization of MnTPPCl thin films

NASA Astrophysics Data System (ADS)

Meikhail, M. S.; Oraby, A. H.; El-Nahass, M. M.; Zeyada, H. M.; Al-Muntaser, A. A.

2018-06-01

The AC conductivity and dielectric properties of MnTPPCl sandwich structure as Au/MnTPPCl/Au were studied. The conductivity of the MnTPPCl thin films have been interpreted by the correlated barrier hopping (CBH) model. The dominant conduction process have found to be the single polaron hopping conduction. The values of the hopping distance, Rω, barrier height, W, and the localized-state density, N, are estimated at different frequencies. The behavior of dielectric constant and dielectric loss was discussed as a function of temperature and frequency. The dielectric constant was described in terms of polarization mechanism in materials. The spectral behavior of dielectric loss is interpreted on the basis of the Giuntini et al. model [1]. The value of WM is obtained as 0.32 eV. A non-Debye relaxation phenomenon was observed from the dielectric relaxation mechanism.

Surface-modified Ba(Zr0.3Ti0.7)O3 nanofibers by polyvinylpyrrolidone filler for poly(vinylidene fluoride) composites with enhanced dielectric constant and energy storage density.

PubMed

Liu, Shaohui; Xue, Shuangxi; Xiu, Shaomei; Shen, Bo; Zhai, Jiwei

2016-05-17

Ferroelectric-relaxor behavior of Ba(Zr0.3Ti0.7)O3 nanofibers (BZT NF) with a large aspect ratio were prepared via electrospinning and surface modified by PVP as dielectric fillers. The nanocomposite flexible films based on surface modified BZT NF and polyvinylidene fluoride (PVDF) were fabricated via a solution casting. The results show that the surface-modified BZT NF fillers are highly dispersed and well integrated in the PVDF nanocomposites. The nanocomposites exhibit enhanced dielectric constant and reduced loss tangents at a low volume fraction of surface-modified BZT NF. The polymer nanocomposites maintain a relatively high breakdown strength, which is favorable for enhancing energy storage density in the nanocomposites. The nanocomposite containing of 2.5 vol. % of PVP modified BZT NF exhibits energy density as high as 6.3 J/cm(3) at 3800 kV/cm, which is more than doubled that of the pure PVDF of 2.8 J/cm(3) at 4000 kV/cm. Such significant enhancement could be attributed to the combined effects of the surface modification and large aspect ratio of the BZT NF. This work may provide a route for using the surface modified ferroelectric-relaxor behavior of ceramic nanofibers to enhance the dielectric energy density in ceramic-polymer nanocomposites.

Synthesis of Derivatives of Alpha, Omega Difunctional Perfluoroaliphatic Compounds for Low Dielectric Constant Resins

DTIC Science & Technology

1992-03-06

coupling reactions of perfluoroalkyl iodides with certain aryl iodides have been studied. Simple trial tests were carried out between perfluorooctyl iodide...omega Difunctional Perfluoroaliphatic Compounds for Low Dielectric Constant Resins by Robert L. Soulen Department of Chemistry Southwestern University...Difunctional Perfluoroaliphatic Compounds for Low Dielectric Resins 12 PERSONAL AUTHOR(S) Robert L. Soulen 1Ja TYPE OF REPORT 73b TIME COVERED FI DATE OF

Application of the compensated Arrhenius formalism to self-diffusion: implications for ionic conductivity and dielectric relaxation.

PubMed

Petrowsky, Matt; Frech, Roger

2010-07-08

Self-diffusion coefficients are measured from -5 to 80 degrees C in a series of linear alcohols using pulsed field gradient NMR. The temperature dependence of these data is studied using a compensated Arrhenius formalism that assumes an Arrhenius-like expression for the diffusion coefficient; however, this expression includes a dielectric constant dependence in the exponential prefactor. Scaling temperature-dependent diffusion coefficients to isothermal diffusion coefficients so that the exponential prefactors cancel results in calculated energies of activation E(a). The exponential prefactor is determined by dividing the temperature-dependent diffusion coefficients by the Boltzmann term exp(-E(a)/RT). Plotting the prefactors versus the dielectric constant places the data on a single master curve. This procedure is identical to that previously used to study the temperature dependence of ionic conductivities and dielectric relaxation rate constants. The energies of activation determined from self-diffusion coefficients in the series of alcohols are strikingly similar to those calculated for the same series of alcohols from both dielectric relaxation rate constants and ionic conductivities of dilute electrolytes. The experimental results are described in terms of an activated transport mechanism that is mediated by relaxation of the solution molecules. This microscopic picture of transport is postulated to be common to diffusion, dielectric relaxation, and ionic transport.

Infrared dielectric functions and optical phonons of wurtzite Y x Al1-x N (0  ⩽  x  ⩽  0.22)

NASA Astrophysics Data System (ADS)

Ben Sedrine, N.; Zukauskaite, A.; Birch, J.; Jensen, J.; Hultman, L.; Schöche, S.; Schubert, M.; Darakchieva, V.

2015-10-01

YAlN is a new member of the group-III nitride family with potential for applications in next generation piezoelectric and light emitting devices. We report the infrared dielectric functions and optical phonons of wurtzite (0001) Y x Al1-x N epitaxial films with 0  ⩽  x  ⩽  0.22. The films are grown by magnetron sputtering epitaxy on c-plane Al2O3 and their phonon properties are investigated using infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The infrared-active E 1(TO) and LO, and the Raman active E 2 phonons are found to exhibit one-mode behavior, which is discussed in the framework of the MREI model. The compositional dependencies of the E 1(TO), E 2 and LO phonon frequencies, the high-frequency limit of the dielectric constant, {{\\varepsilon}∞} , the static dielectric constant, {{\\varepsilon}0} , and the Born effective charge Z B are established and discussed.

Dielectric and Piezoelectric Properties of PZT Composite Thick Films with Variable Solution to Powder Ratios.

PubMed

Wu, Dawei; Zhou, Qifa; Shung, Koping Kirk; Bharadwaja, Srowthi N; Zhang, Dongshe; Zheng, Haixing

2009-05-08

The use of PZT films in sliver-mode high-frequency ultrasonic transducers applications requires thick, dense, and crack-free films with excellent piezoelectric and dielectric properties. In this work, PZT composite solutions were used to deposit PZT films >10 μm in thickness. It was found that the functional properties depend strongly on the mass ratio of PZT sol-gel solution to PZT powder in the composite solution. Both the remanent polarization, P(r), and transverse piezoelectric coefficient, e(31,) (f), increase with increasing proportion of the sol-gel solution in the precursor. Films prepared using a solution-to-powder mass ratio of 0.5 have a remanent polarization of 8 μC/cm(2), a dielectric constant of 450 (at 1 kHz), and e(31,) (f) = -2.8 C/m(2). Increasing the solution-to-powder mass ratio to 6, the films were found to have remanent polarizations as large as 37 μC/cm(2), a dielectric constant of 1250 (at 1 kHz) and e(31,) (f) = -5.8 C/m(2).

Preparation and characterization of bio resin natural tannin/poly (vinylidene fluoride): A high dielectric performance nano-composite for electrical storage

NASA Astrophysics Data System (ADS)

Abdalla, S.; Pizzi, A.; Al-Ghamdi, Maryam A.; AlWafi, Reem

2017-09-01

We have prepared films of polymer nano-composite (PNC) of poly [vinylidene-fluoride] (PVDF) and bio resin natural tannin (BRNT) nanoparticles. The α and γ electro-active phases were detected, and the addition of BRNT drastically increases the formation of the α-phase. Addition of BRNT produces up to 98% of electro-active phases. Robust electrostatic interactions arise between charges at the BRNT-surfaces, and differences in electron affinity between CH2 and CF2 groups created dielectric dipoles. The addition of BRNT has not only enhanced the formation of the electrically active phases but also makes each dipole in the phase has its specific characteristics for example its own relaxation time. The AC-electrical permittivity showed that the dielectric constant of 10%wt-BRNT nanoparticles in PVDF has a value 44 ε0, which is four times more than the dielectric constant of the as-prepared PVDF films. These data show the importance of these polymers as easy, flexible, and durable energy storage materials.

Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd{sub 2}O{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shekhter, P., E-mail: Pini@tx.technion.ac.il; Amouyal, Y.; Eizenberg, M.

2016-07-07

One of the approaches for realizing advanced high k insulators for metal oxide semiconductor field effect transistors based devices is the use of rare earth oxides. When these oxides are deposited as epitaxial thin films, they demonstrate dielectric properties that differ greatly from those that are known for bulk oxides. Using structural and spectroscopic techniques, as well as first-principles calculations, Gd{sub 2}O{sub 3} films deposited on Si (111) and Ge (111) were characterized. It was seen that the same 4 nm thick film, grown simultaneously on Ge and Si, presents an unstrained lattice on Ge while showing a metastable phase onmore » Si. This change from the cubic lattice to the distorted metastable phase is characterized by an increase in the dielectric constant of more than 30% and a change in band gap. The case in study shows that extreme structural changes can occur in ultra-thin epitaxial rare earth oxide films and modify their dielectric properties when the underlying substrate is altered.« less

Achieving polydimethylsiloxane/carbon nanotube (PDMS/CNT) composites with extremely low dielectric loss and adjustable dielectric constant by sandwich structure

NASA Astrophysics Data System (ADS)

Fan, Benhui; Liu, Yu; He, Delong; Bai, Jinbo

2018-01-01

Sandwich-structured composites of polydimethylsiloxane/carbon nanotube (PDMS/CNT) bulk between two neat PDMS thin films with different thicknesses are prepared by the spin-coating method. Taking advantage of CNT's percolation behavior, the composite keeps relatively high dielectric constant (ɛ' = 40) at a low frequency (at 100 Hz). Meanwhile, due to the existence of PDMS isolated out-layers which limits the conductivity of the composite, the composite maintains an extremely low dielectric loss (tan δ = 0.01) (at 100 Hz). Moreover, the same matrix of the out-layer and bulk can achieve excellent interfacial adhesion, and the thickness of the coating layer can be controlled by a multi-cycle way. Then, based on the experimental results, the calculation combining the percolation theory and core-shell model is used to analyze the thickness effect of the coating layer on ɛ'. The obtained relationship between the ɛ' of the composite and the thickness of the coating layer can help to optimize the sandwich structure in order to obtain the adjustable ɛ' and the extremely low tan δ.

Role of dielectric constant in electrohydrodynamics of conducting fluids

NASA Technical Reports Server (NTRS)

Rhodes, Percy H.; Snyder, Robert S.; Roberts, Glyn O.

1994-01-01

Electrohydrodynamic sample distortion during continuous flow electrophoresis is an experiment to be conducted during the second International Microgravity Laboratory (IML-2) in July 1994. The specific objective of this experiment is the distortion caused by the difference in dielectric constant between the sample and surrounding buffer. Although the role of sample conductivity in electrohydrodynamic has been the subject of both flight and ground experiments, the separate role of dielectric constant, independent of sample conductivity, has not been measured. This paper describes some of the laboratory research and model development that will support the flight experiment on IML-2.

Remote Sensing of Salinity: The Dielectric Constant of Sea Water

NASA Technical Reports Server (NTRS)

LeVine, David M.; Lang, R.; Utku, C.; Tarkocin, Y.

2011-01-01

Global monitoring of sea surface salinity from space requires an accurate model for the dielectric constant of sea water as a function of salinity and temperature to characterize the emissivity of the surface. Measurements are being made at 1.413 GHz, the center frequency of the Aquarius radiometers, using a resonant cavity and the perturbation method. The cavity is operated in a transmission mode and immersed in a liquid bath to control temperature. Multiple measurements are made at each temperature and salinity. Error budgets indicate a relative accuracy for both real and imaginary parts of the dielectric constant of about 1%.

Microclimate, Water Potential, Transpiration, and Bole Dielectric Constant of Coniferous and Deciduous Tree Species in the Continental Boreal Ecotone of Central Alaska

NASA Technical Reports Server (NTRS)

Zimmermann, R.; McDonald, K.; Way, J.; Oren, R.

1994-01-01

Tree canopy microclimate, xylem water flux and xylem dielectric constant have been monitored in situ since June 1993 in two adjacent natural forest stands in central Alaska. The deciduous stand represents a mature balsam poplar site on the Tanana River floodplain, while the coniferous stand consists of mature white spruce with some black spruce mixed in. During solstice in June and later in summer, diurnal changes of xylem water potential were measured to investigate the occurrence and magnitude of tree transpiration and dielectric constant changes in stems.

Solvent Dependence of Double Proton Transfer in the Formic Acid-Formamidine Complex: Path Integral Molecular Dynamics Investigation.

PubMed

Kungwan, Nawee; Ngaojampa, Chanisorn; Ogata, Yudai; Kawatsu, Tsutomu; Oba, Yuki; Kawashima, Yukio; Tachikawa, Masanori

2017-10-05

Solvent dependence of double proton transfer in the formic acid-formamidine (FA-FN) complex at room temperature was investigated by means of ab initio path integral molecular dynamics (AIPIMD) simulation with taking nuclear quantum and thermal effects into account. The conductor-like screening model (COSMO) was applied for solvent effect. In comparison with gas phase, double proton delocalization between two heavy atoms (O and N) in FA-FN were observed with reduced proton transfer barrier height in low dielectric constant medium (<4.8). For dielectric constant medium at 4.8, the chance of finding these two protons are more pronounced due to the solvent effect which completely washes out the proton transfer barrier. In the case of higher dielectric constant medium (>4.8), the ionic species becomes more stable than the neutral ones and the formate anion and formamidium cation are thermodynamically stable. For ab initio molecular dynamics simulation, in low dielectric constant medium (<4.8) a reduction of proton transfer barrier with solvent effect is found to be less pronounced than the AIPIMD due to the absence of nuclear quantum effect. Moreover, the motions of FA-FN complex are significantly different with increasing dielectric constant medium. Such a difference is revealed in detail by the principal component analysis.

Non-polarizable force field of water based on the dielectric constant: TIP4P/ε.

PubMed

Fuentes-Azcatl, Raúl; Alejandre, José

2014-02-06

The static dielectric constant at room temperature and the temperature of maximum density are used as target properties to develop, by molecular dynamics simulations, the TIP4P/ε force field of water. The TIP4P parameters are used as a starting point. The key step, to determine simultaneously both properties, is to perform simulations at 240 K where a molecular dipole moment of minimum density is found. The minimum is shifted to larger values of μ as the distance between the oxygen atom and site M, lOM, decreases. First, the parameters that define the dipole moment are adjusted to reproduce the experimental dielectric constant and then the Lennard-Jones parameters are varied to match the temperature of maximum density. The minimum on density at 240 K allows understanding why reported TIP4P models fail to reproduce the temperature of maximum density, the dielectric constant, or both properties. The new model reproduces some of the thermodynamic and transport anomalies of water. Additionally, the dielectric constant, thermodynamics, and dynamical and structural properties at different temperatures and pressures are in excellent agreement with experimental data. The computational cost of the new model is the same as that of the TIP4P.

Non-trivial behavior of the low temperature maximum of dielectric constant and location of the end critical point in Na0.5Bi0.5TiO3-0.06BaTiO3 lead free relaxor ferroelectrics crystals detected by acoustic emission

NASA Astrophysics Data System (ADS)

Dul'kin, Evgeniy; Tiagunova, Jenia; Mojaev, Evgeny; Roth, Michael

2018-01-01

[001] lead free relaxor ferroelectrics crystals of Na0.5Bi0.5TiO3-0.06BaTiO3 were studied by means of dielectric and acoustic emission methods in the temperature range of 25-240 °C and under a dc bias electric field up to 0.4 kV/cm. A temperature maximum of the dielectric constant was found near 170 °C, as well as the acoustic emission bursts pointed out to both the depolarization temperature near 120 °C and the temperature, corresponding to the maximum of dielectric constant, near 170 °C. While the depolarization temperature increased linearly, the temperature of the dielectric constant maximum was shown to exhibit a V-shape behavior under an electric field: it initially decreases, reaches a sharp minimum at some small threshold electric field of 0.15 kV/cm, and then starts to increase similar to the Curie temperature of the normal ferroelectrics, as the field enhances. Acoustic emission bursts, accompanying the depolarization temperature, weakened with the enhancing field, whereas the ones accompanying the temperature of the dielectric constant maximum exhibited two maxima: near 0.1 kV/cm and near 0.3 kV/cm. The meaning of these two acoustic emission maxima is discussed.

Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: A comparative study

NASA Astrophysics Data System (ADS)

Grill, A.; Patel, V.; Rodbell, K. P.; Huang, E.; Baklanov, M. R.; Mogilnikov, K. P.; Toney, M.; Kim, H.-C.

2003-09-01

The low dielectric constant (k) of plasma enhanced chemical vapor deposited SiCOH films has been attributed to porosity in the films. We have shown previously that the dielectric constant of such materials can be extended from the typical k values of 2.7-2.9 to ultralow-k values of k=2.0. The reduction in the dielectric constants has been achieved by enhancing the porosity in the films through the addition of an organic material to the SiCOH precursor and annealing the films to remove the thermally less-stable organic fractions. In order to confirm the relation between dielectric constant and film porosity the latter has been evaluated for SiCOH films with k values from 2.8 to 2.05 using positron annihilation spectroscopy, positron annihilation lifetime spectroscopy, small angle x-ray scattering, specular x-ray reflectivity, and ellipsometric porosimetry measurements. It has been found that the SiCOH films with k=2.8 had no detectable porosity, however the porosity increased with decreasing dielectric constant reaching values of 28%-39% for k values of 2.05. The degree of porosity and the pore size determined by the dissimilar techniques agreed within reasonable limits, especially when one takes into account the small pore size in these films and the different assumptions used by the different techniques. The pore size increases with decreasing k, however the diameter remains below 5 nm for k=2.05, most of the pores being smaller than 2.5 nm.

Hydrothermal synthesis of doped lanthanum zirconate nanomaterials and the effect of V–Ge substitution on their structural, electrical and dielectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farid, Muhammad Asim; Asghar, Muhammad Adnan; Ashiq, Muhammad Naeem, E-mail: naeemashiqqau@yahoo.com

2014-11-15

Graphical abstract: Variation of dielectric constant with frequency for all the synthesized materials. - Highlights: • Hydrothermal method has been successfully employed to synthesize the zirconates. • XRD confirmed the formation of required phase. • Increased electrical resistivity makes these materials useful for microwave devices. • Dielectric parameters of zirconates decrease with increasing frequency. • Dielectric constant decreases with increasing substituents concentration. - Abstract: A hydrothermal method was successfully employed for the synthesis of a series of vanadium and germanium co-doped pyrochlore lanthanum zirconates with composition La{sub 2−x}V{sub x}Zr{sub 2−y}Ge{sub y}O{sub 7} (where x, y = 0.0, 0.25, 0.50, 0.75more » and 1.0). The XRD and FTIR analyses confirmed the formation of single phase except vanadium and germanium substituted samples and the crystallite sizes are in the range of 7–31 nm for V{sup 3+}–Ge{sup 4+} substituted samples. The theoretical compositions are confirmed by the ED-XRF studies. The room temperature electrical resistivity increase with the substituents concentration which suggests that the synthesized materials can be used for microwave devices as such devices required highly resistive materials. Dielectric properties were measured in the frequency range of 6 kHz to 1 MHz. The dielectric parameters decrease with increase in frequency. The DC resistivity data is in good agreement with the dielectric data.« less

Thin film colossal dielectric constant oxide La2-xSrxNiO4: Synthesis, dielectric relaxation measurements, and electrode effects

NASA Astrophysics Data System (ADS)

Podpirka, Adrian; Ramanathan, Shriram

2011-01-01

We have successfully synthesized the colossal dielectric constant oxide La2-xSrxNiO4 in thin film form by reactive cosputtering from metallic targets and careful annealing protocols. Composition and phase purity was determined through energy dispersive spectra and x-ray diffraction, respectively. The dielectric constant exceeds values of over 20 000 up to 1 kHz and the activation energy for the frequency-independent conductivity plateau was extracted to be approximately 155 meV from 300 to 473 K, both in agreement with measurements conducted on bulk single crystals. However, unlike in single crystals, we observe early onset of relaxation in thin films indicating the crucial role of grain boundaries in influencing the dielectric response. ac conductivity at varying temperatures is analyzed within the framework of the universal dielectric law leading to an exponent of approximately 0.3, dependent on the electrode material. Impedance spectroscopy with electrodes of different work function (Pt, Pd, and Ag) was further carried out as a function of temperature and applied bias to provide mechanistic insights into the nature of the dielectric response.

Negative Thermal Expansion and Ferroelectric Oxides in Electronic Device Composites

NASA Astrophysics Data System (ADS)

Trujillo, Joy Elizabeth

Electronic devices increasingly pervade our daily lives, driving the need to develop components which have material properties that can be designed to target a specific need. The principle motive of this thesis is to investigate the effects of particle size and composition on three oxides which possess electronic and thermal properties essential to designing improved ceramic composites for more efficient, high energy storage devices. A metal matrix composite project used the negative thermal expansion oxide, ZrW2O 8, to offset the high thermal expansion of the metal matrix without sacrificing high thermal conductivity. Composite preparation employed a powder mixing technique to achieve easy composition control and homogenous phase distribution in order to build composites which target a specific coefficient of thermal expansion (CTE). A tailorable CTE material is desirable for overcoming thermomechanical failure in heat sinks or device casings. This thesis also considers the particle size effect on dielectric properties in a common ferroelectric perovskite, Ba1-xSrxTiO 3. By varying the Ba:Sr ratio, the Curie temperature can be adjusted and by reducing the particle size, the dielectric constant can be increased and hysteresis decreased. These conditions could yield anonymously large dielectric constants near room temperature. However, the ferroelectric behavior has been observed to cease below a minimum size of a few tens of nanometers in bulk or thin film materials. Using a new particle slurry approach, electrochemical impedance spectroscopy allows dielectric properties to be determined for nanoparticles, as opposed to conventional methods which measure only bulk or thin film dielectric properties. In this manner, Ba1-xSrxTiO3 was investigated in a new size regime, extending the theory on the ferroelectric behavior to < 10 nm diameter. This knowledge will improve the potential to incorporate high dielectric constant, low loss ferroelectric nanoparticles in many complex composites. Finally, powder composite processing and impedance spectroscopy techniques were combined to investigate the SrTiO3/(Y2O3) x(ZrO2)1-x (STO/YSZ) oxide system. Thin film heterostructures of STO/YSZ are used in electrochemical energy devices due to their enhanced interfacial ionic conductivity. This work investigated whether this ionic conductivity enhancement could be observed in bulk sintered architectures, which may lead to new device designs for energy storage needs.

High dielectric constant and energy density induced by the tunable TiO2 interfacial buffer layer in PVDF nanocomposite contained with core-shell structured TiO2@BaTiO3 nanoparticles

NASA Astrophysics Data System (ADS)

Hu, Penghao; Jia, Zhuye; Shen, Zhonghui; Wang, Peng; Liu, Xiaoru

2018-05-01

To realize application in high-capacity capacitors and portable electric devices, large energy density is eagerly desired for polymer-based nanocomposite. The core-shell structured nanofillers with inorganic buffer layer are recently supposed to be promising in improving the dielectric property of polymer nanocomposite. In this work, core-shell structured TO@BT nanoparticles with crystalline TiO2 buffer layer coated on BaTiO3 nanoparticle were fabricated via solution method and heat treatment. The thickness of the TO buffer layer can be tailored by modulating the additive amount of the titanate coupling agent in preparation process, and the apparent dielectric properties of nanocomposite are much related to the thickness of the TO layer. The relatively thin TO layer prefer to generate high polarization to increase dielectric constant while the relatively thick TO layer would rather to homogenize field to maintain breakdown strength. Simulation of electric field distribution in the interfacial region reveals the improving effect of the TO buffer layer on the dielectric properties of nanocomposite which accords with the experimental results well. The optimized nanoparticle TO@BT-2 with a mean thickness of 3-5 nm buffer layer of TO is effective in increasing both the ε and Eb in the PVDF composite film. The maximal discharged energy density of 8.78 J/cm3 with high energy efficiency above 0.6 is obtained in TO@BT-2/PVDF nanocomposite with 2.5 vol% loading close to the breakdown strength of 380 kV/mm. The present study demonstrates the approach to optimize the structure of core-shell nanoparticles by modulating buffer layer and provides a new way to further enlarge energy density in polymer nanocomposite.

Dielectric response of Anderson and pseudogapped insulators

NASA Astrophysics Data System (ADS)

Feigel’man, M. V.; Ivanov, D. A.; Cuevas, E.

2018-05-01

Using a combination of analytic and numerical methods, we study the polarizability of a (non-interacting) Anderson insulator in one-, two-, and three-dimensions and demonstrate that, in a wide range of parameters, it scales proportionally to the square of the localization length, contrary to earlier claims based on the effective-medium approximation. We further analyze the effect of electron–electron interactions on the dielectric constant in quasi-1D, quasi-2D and 3D materials with large localization length, including both Coulomb repulsion and phonon-mediated attraction. The phonon-mediated attraction (in the pseudogapped state on the insulating side of the superconductor-insulator transition) produces a correction to the dielectric constant, which may be detected from a linear response of a dielectric constant to an external magnetic field.

Enhanced Thermal Conductivity and Dielectric Properties of Iron Oxide/Polyethylene Nanocomposites Induced by a Magnetic Field.

PubMed

Chi, Qingguo; Ma, Tao; Dong, Jiufeng; Cui, Yang; Zhang, Yue; Zhang, Changhai; Xu, Shichong; Wang, Xuan; Lei, Qingquan

2017-06-08

Iron Oxide (Fe 3 O 4 ) nanoparticles were deposited on the surface of low density polyethylene (LDPE) particles by solvothermal method. A magnetic field was introduced to the preparation of Fe 3 O 4 /LDPE composites, and the influences of the magnetic field on thermal conductivity and dielectric properties of composites were investigated systematically. The Fe 3 O 4 /LDPE composites treated by a vertical direction magnetic field exhibited a high thermal conductivity and a large dielectric constant at low filler loading. The enhancement of thermal conductivity and dielectric constant is attributed to the formation of the conductive chains of Fe 3 O 4 in LDPE matrix under the action of the magnetic field, which can effectively enhance the heat flux and interfacial polarization of the Fe 3 O 4 /LDPE composites. Moreover, the relatively low dielectric loss and low conductivity achieved are attributed to the low volume fraction of fillers and excellent compatibility between Fe 3 O 4 and LDPE. Of particular note is the dielectric properties of Fe 3 O 4 /LDPE composites induced by the magnetic field also retain good stability across a wide temperature range, and this contributes to the stability and lifespan of polymer capacitors. All the above-mentioned properties along with the simplicity and scalability of the preparation for the polymer nanocomposites make them promising for the electronics industry.

Preparation and dielectric properties of novel composites based on oxidized styrene-butadienestyrene copolymer and polyaniline modified exfoliated graphite nanoplates

NASA Astrophysics Data System (ADS)

Lv, Qun-Chen; Li, Ying; Zhong, Zhi-Kui; Wu, Hui-Jun; He, Fu-An; Lam, Kwok-Ho

2018-05-01

To improve the dielectric performance of high-dielectric-constant conductive filler/polymer composites, polyaniline was deposited on exfoliated graphite nanoplates (xGNPs) by in-situ polymerization method to form polyaniline (PANI) coated xGNPs (xGNPs@PANI) as the conductive filler for the oxidized styrene-butadienestyrene copolymer (SBS-FH) containing both hydroxyl and formyloxy groups. The results of TEM, SEM, FTIR, TGA, Raman spectrum, XPS, and WAXD showed that PANI had been coated onto the surface of xGNPs successfully. The xGNPs@PANI/SBS-FH composites were prepared by a simple solution-blending method and the homogenous distribution of xGNPs@PANI in the SBS-FH matrix was confirmed by SEM. The presence of xGNPs@PANI was found to significantly improve the dielectric properties of resultant composite compared to the unmodified xGNPs. For example, the xGNPs@PANI/SBS-FH composite near percolation threshold filled with 9.38 vol.% xGNPs@PANI showed a dielectric constant of 56.8 and a dielectric loss factor of 0.51 at 1000 Hz, while the corresponding values of xGNPs (1.19 vol.%)/SBS composite were 15.96 and 2.91 at 1000 Hz, respectively. In addition, the incorporation of xGNPs@PANI into SBS-FH could effectively enhance the thermal conductivity of resultant xGNPs@PANI/SBS-FH composite.

The effect of PECVD plasma decomposition on the wettability and dielectric constant changes in silicon modified DLC films for potential MEMS and low stiction applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ogwu, A. A.; Okpalugo, T. I. T.; Nanotechnology Institute, School of Electrical and Mechanical Engineering, University of Ulster, Northern Ireland

We have carried out investigations aimed at understanding the mechanism responsible for a water contact angle increase of up to ten degrees and a decrease in dielectric constant in silicon modified hydrogenated amorphous carbon films compared to unmodified hydrogenated amorphous carbon films. Our investigations based on surface chemical constituent analysis using Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), SIMS, FTIR, contact angle / surface energy measurements and spectroscopic ellipsometry suggests the presence of hydrophobic chemical entities on the surface of the films. This observation is consistent with earlier theoretical plasma chemistry predictions and observed Raman peak shifts in the films. Thesemore » surface hydrophobic entities also have a lower polarizability than the bonds in the un-modified films thereby reducing the dielectric constant of the silicon modified films measured by spectroscopic ellipsometry. Ellipsometric dielectric constant measurement is directly related to the surface energy through Hamaker's constant. Our current finding is expected to be of benefit to understanding stiction, friction and lubrication in areas that range from nano-tribology to microfluidics.« less

The effect of PECVD plasma decomposition on the wettability and dielectric constant changes in silicon modified DLC films for potential MEMS and low stiction applications

NASA Astrophysics Data System (ADS)

Ogwu, A. A.; Okpalugo, T. I. T.; McLaughlin, J. A. D.

2012-09-01

We have carried out investigations aimed at understanding the mechanism responsible for a water contact angle increase of up to ten degrees and a decrease in dielectric constant in silicon modified hydrogenated amorphous carbon films compared to unmodified hydrogenated amorphous carbon films. Our investigations based on surface chemical constituent analysis using Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), SIMS, FTIR, contact angle / surface energy measurements and spectroscopic ellipsometry suggests the presence of hydrophobic chemical entities on the surface of the films. This observation is consistent with earlier theoretical plasma chemistry predictions and observed Raman peak shifts in the films. These surface hydrophobic entities also have a lower polarizability than the bonds in the un-modified films thereby reducing the dielectric constant of the silicon modified films measured by spectroscopic ellipsometry. Ellipsometric dielectric constant measurement is directly related to the surface energy through Hamaker's constant. Our current finding is expected to be of benefit to understanding stiction, friction and lubrication in areas that range from nano-tribology to microfluidics.

High temperature dielectric properties of Apical, Kapton, Peek, Teflon AF, and Upilex polymers

NASA Technical Reports Server (NTRS)

Hammoud, A. N.; Baumann, E. D.; Overton, E.; Myers, I. T.; Suthar, J. L.; Khachen, W.; Laghari, J. R.

1992-01-01

Reliable lightweight systems capable of providing electrical power at the magawatt level are a requirement for future manned space exploration missions. This can be achieved by the development of high temperature insulating materials which are not only capable of surviving the hostile space environment but can contribute to reducing the mass and weight of the heat rejection system. In this work, Apical, Upilex, Kapton, Teflon AF, and Peek polymers are characterized for AC and DC dielectric breakdown in air and in silicone oil at temperatures up to 250 C. The materials are also tested in terms of their dielectric constant and dissipation factor at high temperatures with an electrical stress of 60 Hz, 200 V/mil present. The effects of thermal aging on the properties of the films are determined after 15 hours of exposure to 200 and 250 C, each. The results obtained are discussed and conclusions are made concerning the suitability of these dielectrics for use in capacitors and cable insulations in high temperature environments.

Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination

NASA Astrophysics Data System (ADS)

Bai, Zhiyuan; Du, Jiangfeng; Xin, Qi; Li, Ruonan; Yu, Qi

2018-02-01

We conducted a numerical analysis on high-K dielectric passivated AlGaN/GaN Schottky barrier diodes (HPG-SBDs) with a gated edge termination (GET). The reverse blocking characteristics were significantly enhanced without the stimulation of any parasitic effect by varying the dielectric thickness dge under the GET, thickness TP, and dielectric constant εr of the high-K passivation layer. The leakage current was reduced by increasing εr and decreasing dge. The breakdown voltage of the device was enhanced by increasing εr and TP. The highest breakdown voltage of 970 V and the lowest leakage current of 0.5 nA/mm were achieved under the conditions of εr = 80, TP = 800 nm, and dge = 10 nm. C-V simulation revealed that the HPG-SBDs induced no parasitic capacitance by comparing the integrated charges of the devices with different high-K dielectrics and different dge.

High temperature dielectric properties of Apical, Kapton, Peek, Teflon AF, and Upilex polymers

NASA Astrophysics Data System (ADS)

Hammoud, A. N.; Baumann, E. D.; Overton, E.; Myers, I. T.; Suthar, J. L.; Khachen, W.; Laghari, J. R.

1992-06-01

Reliable lightweight systems capable of providing electrical power at the magawatt level are a requirement for future manned space exploration missions. This can be achieved by the development of high temperature insulating materials which are not only capable of surviving the hostile space environment but can contribute to reducing the mass and weight of the heat rejection system. In this work, Apical, Upilex, Kapton, Teflon AF, and Peek polymers are characterized for AC and DC dielectric breakdown in air and in silicone oil at temperatures up to 250 C. The materials are also tested in terms of their dielectric constant and dissipation factor at high temperatures with an electrical stress of 60 Hz, 200 V/mil present. The effects of thermal aging on the properties of the films are determined after 15 hours of exposure to 200 and 250 C, each. The results obtained are discussed and conclusions are made concerning the suitability of these dielectrics for use in capacitors and cable insulations in high temperature environments.

Effect of soil texture on the microwave emission from soils

NASA Technical Reports Server (NTRS)

Schmugge, T. J.

1980-01-01

The intensity brightness temperature of the microwave emission from the soil is determined primarily by its dielectric properties. The large difference between the dielectric constant of water and that of dry soil produces a strong dependence of the soil's dielectric constant on its moisture content. This dependence is effected by the texture of the soil because the water molecules close to the particle surface are tightly bound and do not contribute significantly to the dielectric properties. Since this surface area is a function of the particle size distribution (soil texture), being larger for clay soils with small particles, and smaller for sandy soils with larger particles; the dielectric properties will depend on soil texture. Laboratory measurements of the dielectric constant for soils are summarized. The dependence of the microwave emission on texture is demonstrated by measurements of brightness temperature from an aircraft platform for a wide range of soil textures. It is concluded that the effect of soil texture differences on the observed values can be normalized by expressing the soil moisture values as a percent field capacity for the soil.

New dielectric elastomers with improved properties for energy harvesting and actuation

NASA Astrophysics Data System (ADS)

Stiubianu, George; Bele, Adrian; Tugui, Codrin; Musteata, Valentina

2015-02-01

New materials with large value for dielectric constant were obtained by using siloxane and chemically modified lignin. The modified lignin does not act as a stiffening filler material for the siloxane but acts as bulk filler, preserving the softness and low value of Young's modulus specific for silicones. The measured values for dielectric constant compare positively with the ones for previously tested dielectric elastomers based on siloxane rubber or acrylic rubber loaded with ceramic nanoparticles. The new materials use the well-known silicone chemistry and lignin which is available worldwide in large amounts as a by-product of pulp and paper industry, making its manufacturing affordable. The prepared dielectric elastomers were tested for possible applications for wave, wind and kinetic body motion energy harvesting. Siloxane, lignin, dielectric

Effect of bottom electrode on dielectric property of sputtered-(Ba,Sr)TiO{sub 3} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ito, Shinichi; Yamada, Tomoaki; Takahashi, Kenji

2009-03-15

(Ba{sub 0.5}Sr{sub 0.5})TiO{sub 3} (BST) films were deposited on (111)Pt/TiO{sub 2}/SiO{sub 2}/Al{sub 2}O{sub 3} substrates by rf sputtering. By inserting a thin layer of SrRuO{sub 3} in between BST film and (111)Pt electrode, the BST films grew fully (111)-oriented without any other orientations. In addition, it enables us to reduce the growth temperature of BST films while keeping the dielectric constant and tunability as high as those of BST films directly deposited on Pt at higher temperatures. The dielectric loss of the films on SrRuO{sub 3}-top substrates was comparable to that on Pt-top substrates for the same level of dielectricmore » constant. The results suggest that the SrRuO{sub 3} thin layer on (111)Pt electrode is an effective approach to growing highly crystalline BST films with (111) orientation at lower deposition temperatures.« less

Carbon Coated Boron Nitride Nanosheets for Polymer Nanocomposites with Enhanced Dielectric Performance

PubMed Central

Yang, Minhao; Zhao, Hang; He, Delong; Hu, Chaohe; Chen, Haowei; Bai, Jinbo

2017-01-01

Carbon coated boron nitride nanosheets (BNNSs@C) hybrids with different carbon contents were synthesized by a chemical vapor deposition (CVD) method. The content of carbon in as-obtained BNNSs@C hybrids could be precisely adjusted from 2.50% to 22.62% by controlling the carbon deposition time during the CVD procedure. Afterward, the BNNSs@C hybrids were subsequently incorporated into the polyvinylidene fluoride (PVDF) matrix to fabricate the BNNSs@C/PVDF nanocomposites through a combination of solution and melting blending methods. The dielectric properties of the as-obtained BNNSs@C/PVDF nanocomposites could be accurately tuned by adjusting the carbon content. The resultant nanocomposites could afford a high dielectric constant about 39 (103 Hz) at BNNSs@C hybrids loading of 30 vol %, which is 4.8 times larger than that of pristine BNNSs-filled ones at the same filler loading, and 3.5 times higher than that of pure PVDF matrix. The largely enhanced dielectric performance could be ascribed to the improved interfacial polarizations of BNNSs/carbon and carbon/PVDF interfaces. The approach reported here offers an effective and alternative method to fabricate high-performance dielectric nanocomposites, which could be potentially applied to the embedded capacitors with high dielectric performance. PMID:28773105

Synthesis and characterization of (Bi{sub 0.5}Ba{sub 0.5}) (Fe{sub 0.5}Ti{sub 0.5}) O{sub 3} ceramic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parida, B.N., E-mail: bichitra_mama@rediffmail.com; Das, Piyush R., E-mail: prdas63@gmail.com; Padhee, R.

2015-01-15

Graphical abstract: Temperature variation of (a) dielectric constant (b) dielectric loss of the sample. - Highlights: • The high values of dielectric permittivity and low value of tangent loss. • It used for microwave applications. • The impedance and dielectric relaxation in the material is non exponential and non Debye-type. • Its ac conductivity obeys Jonscher universal power law. - Abstract: The polycrystalline sample of (Bi{sub 0.5}Ba{sub 0.5}) (Fe{sub 0.5}Ti{sub 0.5}) O{sub 3} (BF–BT) was prepared by a standard mixed oxide method. Analysis of room temperature XRD pattern and Raman/FTIR spectra of the compound does not exhibit any change inmore » its crystal structure of BaTiO{sub 3} on addition of BiFeO{sub 3} in equal ratio. The surface morphology of the gold-plated sintered pellet sample recorded by SEM (scanning electron microscope) exhibits a uniform distribution of grains with less porosity. Detailed studies of nature and quantity of variation of dielectric constant, tangent loss, and polarization with temperature and frequency indicate the existence of ferroelectric phase transition at high-temperature. There is a low-temperature anti-ferromagnetic phase transition below 375 °C in the material. Detailed studies of electrical properties (impedance, modulus, etc.) of the material confirmed a strong correlation between micro-structure and properties.« less

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

PubMed

Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

2018-04-18

A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

NASA Astrophysics Data System (ADS)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low dielectric loss (0.007), and low leakage current (<2×10-8 A/cm2 at 100 kV/cm) were achieved for BST thin film capacitors with Cu-based electrodes.

High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

NASA Astrophysics Data System (ADS)

Yu, Byoung-Soo; Ha, Tae-Jun

2018-04-01

The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

HIGH-k GATE DIELECTRIC: AMORPHOUS Ta/La2O3 FILMS GROWN ON Si AT LOW PRESSURE

NASA Astrophysics Data System (ADS)

Bahari, Ali; Khorshidi, Zahra

2014-09-01

In the present study, Ta/La2O3 films (La2O3 doped with Ta2O5) as a gate dielectric were prepared using a sol-gel method at low pressure. Ta/La2O3 film has some hopeful properties as a gate dielectric of logic device. The structure and morphology of Ta/La2O3 films were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Electrical properties of films were performed using capacitance-voltage (C-V) and current density-voltage (J-V) measurements. The optical bandgap of samples was studied by UV-visible optical absorbance measurement. The optical bandgap, Eopt, is determined from the absorbance spectra. The obtained results show that Ta/La2O3 film as a good gate dielectric has amorphous structure, good thermal stability, high dielectric constant (≈ 25), low leakage current and wide bandgap (≈ 4.7 eV).

Morphological, Raman, electrical and dielectric properties of rare earth doped X-type hexagonal ferrites

NASA Astrophysics Data System (ADS)

Majeed, Abdul; Khan, Muhammad Azhar; ur Raheem, Faseeh; Ahmad, Iftikhar; Akhtar, Majid Niaz; Warsi, Muhammad Farooq

2016-12-01

The influence of rare-earth metals (La, Nd, Gd, Tb, Dy) on morphology, Raman, electrical and dielectric properties of Ba2NiCoRExFe28-xO46 ferrites were studied. The scanning electron microscopy (SEM) exhibited the platelet like structure of these hexagonal ferrites. The surface morphology indicated the formation of ferrite grains in the nano-regime scale. The bands obtained at lower wave number may be attributed to the metal-oxygen vibration at octahedral site which confirm the development of hexagonal phase of these ferrites. The resonance peaks were observed in dielectric constant, dielectric loss factor and quality factor versus frequency graphs. These dielectric parameters indicate that these ferrites nano-materials are potential candidates in the high frequency applications. The enhancement in DC electric resistivity from 2.48×108 to 1.20×109 Ω cm indicates that the prepared materials are beneficial for decreasing the eddy current losses at high frequencies and for the fabrication of multilayer chip inductor (MLCI) devices.

High-temperature material characterization for multispectral window

NASA Astrophysics Data System (ADS)

Park, James; Arida, Marvin-Ray; Ku, Zahyun; Jang, Woo-Yong; Urbas, Augustine M.

2017-05-01

A microwave cylindrical cavity combined with a laser has been investigated to characterize the temperature dependence of widow materials in the Air Force Research Laboratory (AFRL). This paper discusses the requirements of high temperature RF material characterizations for transparent ceramic materials, such as ALON, that can potentially be used for multispectral windows. The RF cylindrical resonator was designed and the numerical model was studied to characterize the dielectric constant of materials. The dielectric constant can be extracted from the resonant frequency shift based on the cavity perturbation method (CPM), which is sensitive to the sample size and shape. Laser heating was applied to the material under test (MUT), which could easily be heated above 1000°C by the laser irradiation, in order to conduct CPM at high temperature. The temperature distribution in a material was also analyzed to investigate the impact of the thermal properties and the sample shape.

Anomalous change in dielectric constant of CaCu3Ti4O12 under violet-to-ultraviolet irradiation

NASA Astrophysics Data System (ADS)

Masingboon, C.; Eknapakul, T.; Suwanwong, S.; Buaphet, P.; Nakajima, H.; Mo, S.-K.; Thongbai, P.; King, P. D. C.; Maensiri, S.; Meevasana, W.

2013-05-01

The influence of light illumination on the dielectric constant of CaCu3Ti4O12 (CCTO) polycrystals is studied in this work. When exposed to 405-nm laser light, a reversible enhancement in the room temperature capacitance as high as 22% was observed, suggesting application of light-sensitive capacitance devices. To uncover the microscopic mechanisms mediating this change, we performed electronic structure measurements, using photoemission spectroscopy, and measured the electrical conductivity of the CCTO samples under different conditions of light exposure and oxygen partial pressure. Together, these results suggest that the large capacitance enhancement is driven by oxygen vacancies induced by the irradiation.

Low-Dielectric Constant Polyimide Nanoporous Films: Synthesis and Properties

NASA Astrophysics Data System (ADS)

Mehdipour-Ataei, S.; Rahimi, A.; Saidi, S.

2007-08-01

Synthesis of high temperature polyimide foams with pore sizes in the nanometer range was developed. Foams were prepared by casting graft copolymers comprising a thermally stable block as the matrix and a thermally labile material as the dispersed phase. Polyimides derived from pyromellitic dianhydride with new diamines (4BAP and BAN) were used as the matrix material and functionalized poly(propylene glycol) oligomers were used as a thermally labile constituent. Upon thermal treatment the labile blocks were subsequently removed leaving pores with the size and shape of the original copolymer morphology. The polyimides and foamed polyimides were characterized by some conventional methods including FTIR, H-NMR, DSC, TGA, SEM, TEM, and dielectric constant.

Room temperature magnetic and dielectric properties of cobalt doped CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mu, Chunhong; Song, Yuanqiang, E-mail: yuanqiangsong@uestc.edu.cn; Wang, Xiaoning

2015-05-07

CaCu{sub 3}Ti{sub 4−x}Co{sub x}O{sub 12} (x = 0, 0.2, 0.4) ceramics were prepared by a conventional solid state reaction, and the effects of cobalt doping on the room temperature magnetic and dielectric properties were investigated. Both X-ray diffraction and energy dispersive X-ray spectroscopy confirmed the presence of Cu and Co rich phase at grain boundaries of Co-doped ceramics. Scanning electron microscopy micrographs of Co-doped samples showed a striking change from regular polyhedral particle type in pure CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) to sheet-like grains with certain growth orientation. Undoped CaCu{sub 3}Ti{sub 4}O{sub 12} is well known for its colossal dielectric constant inmore » a broad temperature and frequency range. The dielectric constant value was slightly changed by 5 at. % and 10 at. % Co doping, whereas the second relaxation process was clearly separated in low frequency region at room temperature. A multirelaxation mechanism was proposed to be the origin of the colossal dielectric constant. In addition, the permeability spectra measurements indicated Co-doped CCTO with good magnetic properties, showing the initial permeability (μ′) as high as 5.5 and low magnetic loss (μ″ < 0.2) below 3 MHz. And the interesting ferromagnetic superexchange coupling in Co-doped CaCu{sub 3}Ti{sub 4}O{sub 12} was discussed.« less

Structural, optical and dielectric properties of graphene oxide

NASA Astrophysics Data System (ADS)

Bhargava, Richa; Khan, Shakeel

2018-05-01

The Modified Hummers method has been used to synthesize Graphene oxide nanoparticles. Microstructural analyses were carried out by X-ray diffraction and Fourier transform infrared spectroscopy. Optical properties were studied by UV-visible spectroscopy in the range of 200-700 nm. The energy band gap was calculated with the help of Tauc relation. The frequency dependence of dielectric constant and dielectric loss were studied over a range of the frequency 75Hz to 5MHz at room temperature. The dispersion in dielectric constant can be explained with the help of Maxwell-Wagner model in studied nanoparticles.

Preparation of dielectric coating of variable dielectric constant by plasma polymerization

NASA Technical Reports Server (NTRS)

Hudis, M.; Wydeven, T. (Inventor)

1979-01-01

A plasma polymerization process for the deposition of a dielectric polymer coating on a substrate comprising disposing of the substrate in a closed reactor between two temperature controlled electrodes connected to a power supply is presented. A vacuum is maintained within the closed reactor, causing a monomer gas or gas mixture of a monomer and diluent to flow into the reactor, generating a plasma between the electrodes. The vacuum varies and controls the dielectric constant of the polymer coating being deposited by regulating the gas total and partial pressure, the electric field strength and frequency, and the current density.

Dielectric relaxation behavior of colloidal suspensions of palladium nanoparticle chains dispersed in PVP/EG solution.

PubMed

Chen, Zhen; Zhao, Kong-Shuang; Guo, Lin; Feng, Cai-Hong

2007-04-28

Dielectric measurements were carried out on colloidal suspensions of palladium nanoparticle chains dispersed in poly(vinyl pyrrolidone)/ethylene glycol (PVP/EG) solution with different particle volume fractions, and dielectric relaxation with relaxation time distribution and small relaxation amplitude was observed in the frequency range from 10(5) to 10(7) Hz. By means of the method based on logarithmic derivative of the dielectric constant and a numerical Kramers-Kronig transform method, two dielectric relaxations were confirmed and dielectric parameters were determined from the dielectric spectra. The dielectric parameters showed a strong dependence on the volume fraction of palladium nanoparticle chain. Through analyzing limiting conductivity at low frequency, the authors found the conductance percolation phenomenon of the suspensions, and the threshold volume fraction is about 0.18. It was concluded from analyzing the dielectric parameters that the high frequency dielectric relaxation results from interfacial polarization and the low frequency dielectric relaxation is a consequence of counterion polarization. They also found that the dispersion state of the palladium nanoparticle chain in PVP/EG solution is dependent on the particle volume fraction, and this may shed some light on a better application of this kind of materials.

Crystal structure study of dielectric oxynitride perovskites La{sub 1−x}Sr{sub x}TiO{sub 2+x}N{sub 1−x} (x=0, 0.2)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Habu, Daiki; Masubuchi, Yuji; Torii, Shuki

As is the case with SrTaO{sub 2}N, both cis-ordering of nitride anions and octahedral titling are also preferable in La{sub 1−x}Sr{sub x}TiO{sub 2+x}N{sub 1−x} (x=0, 0.2) oxynitride perovskites. A larger dielectric constant of ε{sub r}≈5.0×10{sup 3} was estimated for the pure oxynitride with x=0.2, compared with ε{sub r}≈750 for the product with x=0, by extrapolating the ε{sub r} values obtained from powders mixed with paraffin at various mixing ratios. The crystal structure of x=0.2 with larger tolerance factor than x=0 increased the octahedral tilting, which contributes to the increased dielectric constant. The increased dielectric constant supports the exchange mechanism formore » the dielectric property between two kinds of –Ti–N– helical coils (clockwise and anticlockwise) derived from the above cis-ordering of nitride anions. - Graphical abstract: Very large dielectric constant values were estimated for La{sub 1−x}Sr{sub x}TiO{sub 2+x}N{sub 1−x}; ε{sub r}≈5.0×10{sup 3} in x=0.2 and ε{sub r}≈750 in x=0. - Highlights: • Cis-configuration of nitride anions was confirmed in La{sub 1−x}Sr{sub x}TiO{sub 2+x}N{sub 1−x} (x=0, 0.2). • Dielectric constant values were estimated to be 750 for x=0 and 5.0×10{sup 3} for x=0.2, respectively. • The large dielectric property is to the exchange mechanism between clockwise and anticlockwise –Ti–N– coil motifs.« less

Independence of the effective dielectric constant of an electrolytic solution on the ionic distribution in the linear Poisson-Nernst-Planck model.

PubMed

Alexe-Ionescu, A L; Barbero, G; Lelidis, I

2014-08-28

We consider the influence of the spatial dependence of the ions distribution on the effective dielectric constant of an electrolytic solution. We show that in the linear version of the Poisson-Nernst-Planck model, the effective dielectric constant of the solution has to be considered independent of any ionic distribution induced by the external field. This result follows from the fact that, in the linear approximation of the Poisson-Nernst-Planck model, the redistribution of the ions in the solvent due to the external field gives rise to a variation of the dielectric constant that is of the first order in the effective potential, and therefore it has to be neglected in the Poisson's equation that relates the actual electric potential across the electrolytic cell to the bulk density of ions. The analysis is performed in the case where the electrodes are perfectly blocking and the adsorption at the electrodes is negligible, and in the absence of any ion dissociation-recombination effect.

Electronic polarizability of light crude oil from optical and dielectric studies

NASA Astrophysics Data System (ADS)

George, A. K.; Singh, R. N.

2017-07-01

In the present paper we report the temperature dependence of density, refractive indices and dielectric constant of three samples of crude oils. The API gravity number estimated from the temperature dependent density studies revealed that the three samples fall in the category of light oil. The measured data of refractive index and the density are used to evaluate the polarizability of these fluids. Molar refractive index and the molar volume are evaluated through Lorentz-Lorenz equation. The function of the refractive index, FRI , divided by the mass density ρ, is a constant approximately equal to one-third and is invariant with temperature for all the samples. The measured values of the dielectric constant decrease linearly with increasing temperature for all the samples. The dielectric constant estimated from the refractive index measurements using Lorentz-Lorentz equation agrees well with the measured values. The results are promising since all the three measured properties complement each other and offer a simple and reliable method for estimating crude oil properties, in the absence of sufficient data.

Polaron-electron assisted giant dielectric dispersion in SrZrO{sub 3} high-k dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borkar, Hitesh; Barvat, Arun; Pal, Prabir

2016-06-07

The SrZrO{sub 3} is a well known high-k dielectric constant (∼22) and high optical bandgap (∼5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (T{sub e}) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction.more » X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O{sup 2−} anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO{sub 6} octahedral angle in the temperature range of 650–750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.« less

Fluorinated graphene as high performance dielectric materials and the applications for graphene nanoelectronics.

PubMed

Ho, Kuan-I; Huang, Chi-Hsien; Liao, Jia-Hong; Zhang, Wenjing; Li, Lain-Jong; Lai, Chao-Sung; Su, Ching-Yuan

2014-07-31

There is broad interest in surface functionalization of 2D materials and its related applications. In this work, we present a novel graphene layer transistor fabricated by introducing fluorinated graphene (fluorographene), one of the thinnest 2D insulator, as the gate dielectric material. For the first time, the dielectric properties of fluorographene, including its dielectric constant, frequency dispersion, breakdown electric field and thermal stability, were comprehensively investigated. We found that fluorographene with extremely thin thickness (5 nm) can sustain high resistance at temperature up to 400 °C. The measured breakdown electric field is higher than 10 MV cm(-1), which is the heightest value for dielectric materials in this thickness. Moreover, a proof-of-concept methodology, one-step fluorination of 10-layered graphene, is readily to obtain the fluorographene/graphene heterostructures, where the top-gated transistor based on this structure exhibits an average carrier mobility above 760 cm(2)/Vs, higher than that obtained when SiO₂ and GO were used as gate dielectric materials. The demonstrated fluorographene shows excellent dielectric properties with fast and scalable processing, providing a universal applications for the integration of versatile nano-electronic devices.

Fluorinated Graphene as High Performance Dielectric Materials and the Applications for Graphene Nanoelectronics

PubMed Central

Ho, Kuan-I; Huang, Chi-Hsien; Liao, Jia-Hong; Zhang, Wenjing; Li, Lain-Jong; Lai, Chao-Sung; Su, Ching-Yuan

2014-01-01

There is broad interest in surface functionalization of 2D materials and its related applications. In this work, we present a novel graphene layer transistor fabricated by introducing fluorinated graphene (fluorographene), one of the thinnest 2D insulator, as the gate dielectric material. For the first time, the dielectric properties of fluorographene, including its dielectric constant, frequency dispersion, breakdown electric field and thermal stability, were comprehensively investigated. We found that fluorographene with extremely thin thickness (5 nm) can sustain high resistance at temperature up to 400°C. The measured breakdown electric field is higher than 10 MV cm−1, which is the heightest value for dielectric materials in this thickness. Moreover, a proof-of-concept methodology, one-step fluorination of 10-layered graphene, is readily to obtain the fluorographene/graphene heterostructures, where the top-gated transistor based on this structure exhibits an average carrier mobility above 760 cm2/Vs, higher than that obtained when SiO2 and GO were used as gate dielectric materials. The demonstrated fluorographene shows excellent dielectric properties with fast and scalable processing, providing a universal applications for the integration of versatile nano-electronic devices. PMID:25081226

Modification of the erythrocyte membrane dielectric constant by alcohols.

PubMed

Orme, F W; Moronne, M M; Macey, R I

1988-08-01

Aliphatic alcohols are found to stimulate the transmembrane fluxes of a hydrophobic cation (tetraphenylarsonium, TPA) and anion (AN-12) 5-20 times in red blood cells. The results are analyzed using the Born-Parsegian equation (Parsegian, A., 1969, Nature (London) 221:844-846), together with the Clausius-Mossotti equation to calculate membrane dielectric energy barriers. Using established literature values of membrane thickness, native membrane dielectric constant, TPA ionic radius, and alcohol properties (partition coefficient, molar volume, dielectric constant), the TPA permeability data is predicted remarkably well by theory. If the radius of AN-12 is taken as 1.9 A, its permeability in the presence of butanol is also described by our analysis. Further, the theory quantitatively accounts for the data of Gutknecht and Tosteson (Gutknecht, J., Tosteson, D.C., 1970, J. Gen. Physiol. 55:359-374) covering alcohol-induced conductivity changes of 3 orders of magnitude in artificial bilayers. Other explanations including perturbations of membrane fluidity, surface charge, membrane thickness, and dipole potential are discussed. However, the large magnitude of the stimulation, the more pronounced effect on smaller ions, and the acceleration of both anions and cations suggest membrane dielectric constant change as the primary basis of alcohol effects.

Giant dielectric response and low dielectric loss in Al{sub 2}O{sub 3} grafted CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajabtabar-Darvishi, A.; Center for Surface and Nanoanalytics; Bayati, R., E-mail: reza.bayati@intel.com, E-mail: mbayati@ncsu.edu, E-mail: wdfei@hit.edu.cn

2015-03-07

This study sheds light on the effect of alumina on dielectric constant and dielectric loss of novel CaCu{sub 3}Ti{sub 4}O{sub 12} composite ceramics. Alumina, at several concentrations, was deposited on the surface of CaCu{sub 3}Ti{sub 4}O{sub 12} particles via sol-gel technique. The dielectric constant significantly increased for all frequencies and the dielectric loss substantially decreased for low and intermediate frequencies. These observations were attributed to the change in characteristics of grains and grain boundaries. It was found that the insulating properties of the grain boundaries are improved following the addition of Al{sub 2}O{sub 3}. The relative density of CaCu{sub 3}Ti{submore » 4}O{sub 12}/Al{sub 2}O{sub 3} composite ceramics decreased compared to the pure CaCu{sub 3}Ti{sub 4}O{sub 12} and the grain size was greatly changed with the alumina content affecting the dielectric properties. With the addition of alumina into CaCu{sub 3}Ti{sub 4}O{sub 12}, tighter interfaces formed. The 6%- and 10%-alumina ceramics showed the minimum dielectric loss and the maximum dielectric constant, respectively. Both the dielectric constant and loss tangent decreased in the 20%-alumina ceramic due to the formation of CuO secondary phase. It was revealed that Al serves as an electron acceptor decreasing the electron concentration, if Al{sup 3+} ions substitute for Ti{sup 4+} ions, and as an electron donor increasing the electron concentration, if Al{sup 3+} ions substitute for Ca{sup 2+} ions. We established a processing-microstructure-properties paradigm which opens new avenues for novel applications of CaCu{sub 3}Ti{sub 4}O{sub 12}/Al{sub 2}O{sub 3} composite ceramics.« less

Dielectric studies on struvite urinary crystals, a gateway to the new treatment modality for urolithiasis

NASA Astrophysics Data System (ADS)

Rajan, Reshma; Raj, N. Arunai Nambi; Madeswaran, S.; Babu, D. Rajan

2015-09-01

Struvite or magnesium ammonium phosphate hexahydrate (MAPH) are biological crystals, found in the kidney, which are formed due to the infection caused by urea splitting bacteria in the urinary tract. The struvite crystals observe different morphologies and were developed using single diffusion gel growth technique. The crystalline nature and its composition were studied from different characterization techniques like X-ray Diffraction (XRD) and FTIR. The dielectric behavior of the developed crystal was studied by varying temperature and at different frequencies. The parameters like dielectric constant, dielectric loss, ac conductivity, ac resistivity, impedance and admittance of the struvite crystals were calculated. The studies proved that the dielectric loss or dissipation heat is high in lower frequencies at normal body temperature, which develops a plasma state in the stones and in turn leads to the disintegration of urinary stones. The dielectric nature of the stones leads to the dielectric therapy, which will be a gateway for future treatment modality for urolithiasis.

The electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures

NASA Astrophysics Data System (ADS)

Karabulut, Abdulkerim; Türüt, Abdulmecit; Karataş, Şükrü

2018-04-01

In this work, temperature dependent electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures were investigated using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in the temperature range of 60-320 K by steps of 20 K at 1 MHz. The dielectric constant (ε‧), dielectric loss (ε″), dielectric loss tangent (tanδ) and ac electrical conductivities (σac) have been calculated as a function of temperature. These values of the ε‧, ε″, tanδ and σac have been found to be 2.272, 5.981, 2.631 and 3.32 × 10-6 (Ω-1cm-1) at 80 K, respectively, 1.779, 2.315, 1.301 and 1.28 × 10-6 (Ω-1cm-1), respectively at 320 K. These decrease of the dielectric parameters (ε‧, ε″, tanδ and σac) have been observed at high temperatures. The experimental results show that electrical and dielectric properties are strongly temperature and bias voltage dependent.

Influence of applied electric field annealing on the microwave properties of (Ba0.5Sr0.5)TiO3 thin films

NASA Astrophysics Data System (ADS)

Cho, Kwang-Hwan; Lee, Chil-Hyoung; Kang, Chong-Yun; Yoon, Seok-Jin; Lee, Young-Pak

2007-04-01

The effect of heat treatment in electric field on the structure and dielectric properties at microwave range of rf magnetron sputtering derived (Ba0.5Sr0.5)TiO3 thin films have been studied. It has been demonstrated that postannealing in the proper electric field can increase the dielectric constant and the tunability. The increased out-of-plane lattice constant in the electric-annealed films indicated the formation of small polar regions with tetragonal structure, which are responsible for the increased dielectric constant and tunability. It was proposed that the segregation of Ti3+ ions caused by electric annealing could induce the formation of BaTiO3-like regions, which are ferroelectric at room temperature. And in dielectric loss, as the Ti-O bonding lengths increase, the energy scattering on the ferroelectric mode also increases. So, the value of dielectric loss is slightly increased.

Dielectric Relaxation Behavior and AC Electrical Conductivity Study of 2-(1,2-Dihydro-7-Methyl-2-Oxoquinoline-5-yl) Malononitrile (DMOQMN)

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; El-Zaidia, E. F. M.; Darwish, A. A. A.; Salem, G. F.

2017-02-01

Dielectric relaxation and alternative current conductivity of a new organic compound 2-(1,2-dihydro-7-methyl-2-oxoquinoline-5-yl) malononitrile (DMOQMN) have been investigated. X-ray diffraction (XRD) at room temperature reveals that DMOQMN samples have a polycrystalline structure of the triclinic system. The analysis of the dielectric constant and dielectric loss index suggested the dominant polarization is performed and the Maxwell-Wagner-Sillar type polarization is dominating at low frequency and high temperature. These results have been confirmed by the XRD and dielectric modulus. The estimated relaxation time and the activation energy are 9 × 10-13 s and 0.43 eV, respectively. Our results indicated that the conduction mechanism of DMOQMN is controlled by the correlation barrier hopping (CBH) model.

Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics.

PubMed

Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

2016-09-20

The dielectric response of a material is central to numerous processes spanning the fields of chemistry, materials science, biology, and physics. Despite this broad importance across these disciplines, describing the dielectric environment of a molecular system at the level of first-principles theory and computation remains a great challenge and is of importance to understand the behavior of existing systems as well as to guide the design and synthetic realization of new ones. Furthermore, with recent advances in molecular electronics, nanotechnology, and molecular biology, it has become necessary to predict the dielectric properties of molecular systems that are often difficult or impossible to measure experimentally. In these scenarios, it is would be highly desirable to be able to determine dielectric response through efficient, accurate, and chemically informative calculations. A good example of where theoretical modeling of dielectric response would be valuable is in the development of high-capacitance organic gate dielectrics for unconventional electronics such as those that could be fabricated by high-throughput printing techniques. Gate dielectrics are fundamental components of all transistor-based logic circuitry, and the combination high dielectric constant and nanoscopic thickness (i.e., high capacitance) is essential to achieving high switching speeds and low power consumption. Molecule-based dielectrics offer the promise of cheap, flexible, and mass producible electronics when used in conjunction with unconventional organic or inorganic semiconducting materials to fabricate organic field effect transistors (OFETs). The molecular dielectrics developed to date typically have limited dielectric response, which results in low capacitances, translating into poor performance of the resulting OFETs. Furthermore, the development of better performing dielectric materials has been hindered by the current highly empirical and labor-intensive pace of synthetic progress. An accurate and efficient theoretical computational approach could drastically decrease this time by screening potential dielectric materials and providing reliable design rules for future molecular dielectrics. Until recently, accurate calculation of dielectric responses in molecular materials was difficult and highly approximate. Most previous modeling efforts relied on classical formalisms to relate molecular polarizability to macroscopic dielectric properties. These efforts often vastly overestimated polarizability in the subject materials and ignored crucial material properties that can affect dielectric response. Recent advances in first-principles calculations via density functional theory (DFT) with periodic boundary conditions have allowed accurate computation of dielectric properties in molecular materials. In this Account, we outline the methodology used to calculate dielectric properties of molecular materials. We demonstrate the validity of this approach on model systems, capturing the frequency dependence of the dielectric response and achieving quantitative accuracy compared with experiment. This method is then used as a guide to new high-capacitance molecular dielectrics by determining what materials and chemical properties are important in maximizing dielectric response in self-assembled monolayers (SAMs). It will be seen that this technique is a powerful tool for understanding and designing new molecular dielectric systems, the properties of which are fundamental to many scientific areas.

Grain size effect on the giant dielectric constant of CaCu3Ti4O12 nanoceramics prepared by mechanosynthesis and spark plasma sintering

NASA Astrophysics Data System (ADS)

Ahmad, Mohamad M.; Yamada, Koji

2014-04-01

In the present work, CaCu3Ti4O12 (CCTO) nanoceramics with different grain sizes were prepared by spark plasma sintering (SPS) at different temperatures (SPS-800, SPS-900, SPS-975, and SPS-1050) of the mechanosynthesized nano-powder. Structural and microstructural properties were studied by XRD and field-emission scanning electron microscope measurements. The grain size of CCTO nanoceramics increases from 80 nm to ˜200 nm for the ceramics sintered at 800 °C and 975 °C, respectively. Further increase of SPS temperature to 1050 °C leads to micro-sized ceramics of 2-3 μm. The electrical and dielectric properties of the investigated ceramics were studied by impedance spectroscopy. Giant dielectric constant was observed in CCTO nanoceramics. The dielectric constant increases with increasing the grain size of the nanoceramics with values of 8.3 × 103, 2.4 × 104, and 3.2 × 104 for SPS-800, SPS-900, and SPS-975, respectively. For the micro-sized SPS-1050 ceramics, the dielectric constant dropped to 2.14 × 104. The dielectric behavior is interpreted within the internal barrier layer capacitance picture due to the electrical inhomogeneity of the ceramics. Besides the resistive grain boundaries that are usually observed in CCTO ceramics, domain boundaries appear as a second source of internal layers in the current nanoceramics.

Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

NASA Astrophysics Data System (ADS)

Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

1988-11-01

It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material

NASA Astrophysics Data System (ADS)

Liu, J.-W.; Liao, M.-Y.; Imura, M.; Watanabe, E.; Oosato, H.; Koide, Y.

2014-06-01

A Ta2O5/Al2O3 bilayer gate oxide with a high-dielectric constant (high-k) has been successfully applied to a hydrogenated-diamond (H-diamond) metal-insulator-semiconductor field effect transistor (MISFET). The Ta2O5 layer is prepared by a sputtering-deposition (SD) technique on the Al2O3 buffer layer fabricated by an atomic layer deposition (ALD) technique. The ALD-Al2O3 plays an important role to eliminate plasma damage for the H-diamond surface during SD-Ta2O5 deposition. The dielectric constants of the SD-Ta2O5/ALD-Al2O3 bilayer and single SD-Ta2O5 are as large as 12.7 and 16.5, respectively. The k value of the single SD-Ta2O5 in this study is in good agreement with that of the SD-Ta2O5 on oxygen-terminated diamond. The capacitance-voltage characteristic suggests low interfacial trapped charge density for the SD-Ta2O5/ALD-Al2O3/H-diamond MIS diode. The MISFET with a gate length of 4 µm has a drain current maximum and an extrinsic transconductance of -97.7 mA mm-1 (normalized by gate width) and 31.0 ± 0.1 mS mm-1, respectively. The effective mobility in the H-diamond channel layer is found to be 70.1 ± 0.5 cm2 V-1 s-1.

Dielectric and modulus studies of polycrystalline BaZrO3 ceramic

NASA Astrophysics Data System (ADS)

Saini, Deepash S.; Singh, Sunder; Kumar, Anil; Bhattacharya, D.

2018-05-01

In the present work, dielectric and modulus studies of polycrystalline BaZrO3 ceramic, prepared by modified combustion method followed by conventional sintering, are investigated over the frequency range of 100 Hz to 106 Hz at different temperatures from 250 to 500 °C in air. The high value of dielectric constant (ɛ' ˜ 103) of BaZrO3 at high temperature and low frequency can be attributed to the Maxwell-Wagner polarization mechanism as well as to the thermally activated mechanism of charge carriers. Electric modulus reveal two type relaxations in the 250 °C to 800 °C temperature region as studied at different frequencies over 100 Hz to 106 Hz in air.

Influence of Al3+ substitution on the electrical resistivity and dielectric behavior of Ni0.25Cu0.20Zn0.55AlxFe2-xO4 ferrites synthesized by solid state reaction technique

NASA Astrophysics Data System (ADS)

Rahman, K. R.; Chowdhury, F.-U.-Z.; Khan, M. N. I.

2017-12-01

In this paper, the effect of Al3+ substitution on the electrical and dielectric properties of Ni0.25Cu0.20Zn0.55AlxFe2-xO4 ferrites with x = 0.0, 0.05. 0.10, 0.15 and 0.20, synthesized by solid state reaction has been reported. Using two probe method, the DC resistivity has been investigated in the temperature range from 30 °C to 300 °C. Activation energy was calculated from the Arrhenius plot. The electrical conduction is explained on the basis of the hopping mechanism. The frequency dependent dielectric properties of these spinel ferrites have been studied at room temperature by measuring AC resistivity, conductivity (σac), dielectric constant and dielectric loss tangent (tan δ) in the frequency range between 1 kHz and 120 MHz. The study of dielectric properties showed that the dielectric constant and dielectric loss increased with increasing non-magnetic Al ions. The dependence of dielectric constant with frequency has been explained by Maxwell-Wagner interfacial polarization. Cole-Cole plots show semicircular arc(s) for the samples, and equivalent RC circuits have been proposed to clarify the phenomena involved therein. The analysis of complex impedance spectroscopy has been used to distinguish between the grain and grain boundary contribution to the total resistance.

Metamaterial Behavior of Polymer Nanocomposites Based on Polypropylene/Multi-Walled Carbon Nanotubes Fabricated by Means of Ultrasound-Assisted Extrusion

PubMed Central

Pérez-Medina, Juan C.; Waldo-Mendoza, Miguel A.; Cruz-Delgado, Víctor J.; Quiñones-Jurado, Zoe V.; González-Morones, Pablo; Ziolo, Ronald F.; Martínez-Colunga, Juan G.; Soriano-Corral, Florentino; Avila-Orta, Carlos A.

2016-01-01

Metamaterial behavior of polymer nanocomposites (NCs) based on isotactic polypropylene (iPP) and multi-walled carbon nanotubes (MWCNTs) was investigated based on the observation of a negative dielectric constant (ε′). It is demonstrated that as the dielectric constant switches from negative to positive, the plasma frequency (ωp) depends strongly on the ultrasound-assisted fabrication method, as well as on the melt flow index of the iPP. NCs were fabricated using ultrasound-assisted extrusion methods with 10 wt % loadings of MWCNTs in iPPs with different melt flow indices (MFI). AC electrical conductivity (σ(AC)) as a function of frequency was determined to complement the electrical classification of the NCs, which were previously designated as insulating (I), static-dissipative (SD), and conductive (C) materials. It was found that the SD and C materials can also be classified as metamaterials (M). This type of behavior emerges from the negative dielectric constant observed at low frequencies although, at certain frequencies, the dielectric constant becomes positive. Our method of fabrication allows for the preparation of metamaterials with tunable ωp. iPP pure samples show only positive dielectric constants. Electrical conductivity increases in all cases with the addition of MWCNTs with the largest increases observed for samples with the highest MFI. A relationship between MFI and the fabrication method, with respect to electrical properties, is reported. PMID:28774042

Giant voltage-induced deformation of a dielectric elastomer under a constant pressure

NASA Astrophysics Data System (ADS)

Godaba, Hareesh; Foo, Choon Chiang; Zhang, Zhi Qian; Khoo, Boo Cheong; Zhu, Jian

2014-09-01

Dielectric elastomer actuators coupled with liquid have recently been developed as soft pumps, soft lenses, Braille displays, etc. In this paper, we investigate the performance of a dielectric elastomer actuator, which is coupled with water. The experiments demonstrate that the membrane of a dielectric elastomer can achieve a giant voltage-induced area strain of 1165%, when subject to a constant pressure. Both theory and experiment show that the pressure plays an important role in determining the electromechanical behaviour. The experiments also suggest that the dielectric elastomer actuators, when coupled with liquid, may suffer mechanical instability and collapse after a large amount of liquid is enclosed by the membrane. This failure mode needs to be taken into account in designing soft actuators.

Simulation of Charged Systems in Heterogeneous Dielectric Media via a True Energy Functional

NASA Astrophysics Data System (ADS)

Jadhao, Vikram; Solis, Francisco J.; de la Cruz, Monica Olvera

2012-11-01

For charged systems in heterogeneous dielectric media, a key obstacle for molecular dynamics (MD) simulations is the need to solve the Poisson equation in the media. This obstacle can be bypassed using MD methods that treat the local polarization charge density as a dynamic variable, but such approaches require access to a true free energy functional, one that evaluates to the equilibrium electrostatic energy at its minimum. In this Letter, we derive the needed functional. As an application, we develop a Car-Parrinello MD method for the simulation of free charges present near a spherical emulsion droplet separating two immiscible liquids with different dielectric constants. Our results show the presence of nonmonotonic ionic profiles in the dielectric with a lower dielectric constant.

Characterization of high-{kappa} LaLuO{sub 3} thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Shu; Huang Sen; Chen Hongwei

2011-10-31

We report the study of high-dielectric-constant (high-{kappa}) dielectric LaLuO{sub 3} (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN heterostrucure have been investigated with atomic force microscopy, x-ray photoelectron spectroscopy, and TEM. It is revealed that the MBD-grown 16 nm-thick LLO film is polycrystalline with a thin ({approx}2 nm) amorphous transition layer at the LLO/GaN interface. The bandgap of LLO is derived as 5.3 {+-} 0.04 eV from O1s energy loss spectrum. Capacitance-voltage (C-V) characteristics of a Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode exhibit small frequency dispersion (<2%) and reveal amore » high effective dielectric constant of {approx}28 for the LLO film. The LLO layer is shown to be effective in suppressing the reverse and forward leakage current in the MIS diode. In particular, the MIS diode forward current is reduced by 7 orders of magnitude at a forward bias of 1 V compared to a conventional Ni-Au/III-nitride Schottky diode.« less

Dielectric and varistor properties of rare-earth-doped ZnO and CaCu3Ti4O12 composite ceramics

NASA Astrophysics Data System (ADS)

Lu, Huafei; Lin, Yuanhua; Yuan, Jiancong; Nan, Cewen; Chen, Kexin

2013-02-01

To investigate the multi-functional ceramics with both high permittivity and large nonlinear coefficient, we have prepared rare-earth Tb-and-Co doped ZnO and TiO2-rich CaCu3Ti4O12 (TCCTO) powders by chemical co-precipitation and sol-gel methods respectively, and then obtained the TCCTO/ZnO composite ceramics, sintered at 1100°C for 3 h in air. Analyzing the composite ceramics of the microstructure and phase composition indicated that the composite ceramics were composed of the main phases of ZnO and CaCu3Ti4O12 (CCTO). Our results revealed that the TCCTO/ZnO composite ceramics showed both high dielectric and good nonlinear electrical behaviors. The composite ceramic of TCCTO: ZnO = 0.3 exhibited a high dielectric constant of 210(1 kHz) with a nonlinear coefficient of 11. The dielectric behavior of TCCTO/ZnO composite could be explained by the mixture rule. With the high dielectric permittivity and tunable varistor behaviors, the composite ceramics has a potential application for the higher voltage transportation devices.

Dielectric spectroscopy of Dy2O3 doped (K0.5Na0.5)NbO3 piezoelectric ceramics

NASA Astrophysics Data System (ADS)

Mahesh, P.; Subhash, T.; Pamu, D.

2014-06-01

We report the dielectric properties of ( K 0.5 Na 0.5 ) NbO 3 ceramics doped with x wt% of Dy 2 O 3 (x= 0.0-1.5 wt%) using the broadband dielectric spectroscopy. The X-ray diffraction studies showed the formation of perovskite structure signifying that Dy 2 O 3 diffuse into the KNN lattice. Samples doped with x > 0.5 wt% exhibit smaller grain size and lower relative densities. The dielectric properties of KNN ceramics doped with Dy 2 O 3 are enhanced by increasing the Dy 3+ content; among the compositions studied, x = 0.5 wt% exhibited the highest dielectric constant and lowest loss at 1MHz over the temperature range of 30°C to 400°C. All the samples exhibit maximum dielectric constant at the Curie temperature (˜ 326°C) and a small peak in the dielectric constant at around 165°C is due to a structural phase transition. At the request of all authors, and by agreement with the Proceedings Editors, a corrected version of this article was published on 19 June 2014. The full text of the Corrigendum is attached to the corrected article PDF file.

Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications

NASA Astrophysics Data System (ADS)

Chen, Hsuen-Li; Hsieh, Chung-I; Cheng, Chao-Chia; Chang, Chia-Pin; Hsu, Wen-Hau; Wang, Way-Seen; Liu, Po-Tsun

2005-07-01

Ultralow dielectric constant (<2.0) porous materials have received much attention as next-generation dielectric materials. In this study, optical properties of porous-methyl-silsesquioxane(MSQ)-like films (porous polysilazane, PPSZ) were characterized for optical waveguide devices applications. Measured results indicate that the refractive index is decreased to approximately 1.320 as the hydration time exceeds 24 h. The measured refractive index is about 1.163 at a wavelength of 1550 nm. PPSZ films have low absorption in the 500 to 2000 nm wavelength regime. Because of their relatively low refractive index and low absorption over a large spectral regime, PPSZ films can be good cladding materials for use in optically integrated devices with many high-refractive-index materials such as silicon oxide, silicon nitride, silicon, and polymers. We demonstrate two structures, ridge waveguides and large-angle Y-branch power splitters, composed of PPSZ and SU8 films to illustrate the use of low dielectric constant (K) cladding materials. The simulation results indicate that the PPSZ films provide better confinement of light. Experimentally, a large-angle Y-branch power splitter with PPSZ cladding can be used to guide waves with the large branching angle of 33.58°.

Energy storage properties of Dy3+ doped Sr0.5Ba0.5Nb2O6 thick film with nano-size grains

NASA Astrophysics Data System (ADS)

Yang, Daeyeol; Kang, Soo-Bin; Lim, Ji-Ho; Yoon, Songhyeon; Ryu, Jungho; Choi, Jong-Jin; Velayutham, Thamil Selvi; Kim, Hyungsun; Jeong, Dae-Yong

2017-09-01

We studied the temperature stable high-energy storage capacitors. Sr0.5Ba0.5Nb2O6 (SBN) is the lead-free ferroelectric solid solution between BaNb2O6 and SrNb2O6. By doping Dy into SBN, the Curie temperature was lowered and dielectric constant was increased. To improve the breakdown behavior of Dy-doped SBN, the aerosoldeposition(AD) was applied to fabricate the dense films with nano-sized grains. These nano-grain give a large number of grain boundaries, suppressing the electron conduction in ceramics. The dielectric constant and breakdown electric field of the AD films annealed at 650 °C were measured as 2307 and 9.9 MV/m, while bulk were 1080 and 4 MV/m. Energy density and efficiency of the AD films annealed at 650 °C were also enhanced as 0.65 J/cc and 90.2% and bulk were 0.08 J/cc and 72.1%, respectively. In addition, the dielectric constant of AD film annealed at 550 °C and 650 °C were quite stable up to 150 °C.

Effect of Mn doping on the temperature-dependent anomalous giant dielectric behavior of CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Kim, C. H.; Jang, Y. H.; Seo, S. J.; Song, C. H.; Son, J. Y.; Yang, Y. S.; Cho, J. H.

2012-06-01

We report dielectric properties and dielectric relaxation behaviors of Mn-substituted CaCu3Ti4O12 (CCTO) on Cu sites. While CCTO exhibits the giant dielectric constant and low dielectric loss in a wide temperature range, drastic suppression of the dielectric constant in Mn-doped CCTO (CCMTO) samples have been observed in temperature and frequency dependencies of dielectric properties with two possible origins as Mn doping increases. The observed suppression of dielectric response in the low Mn doping differs from the heavy doping of Mn in CCMTO samples. The low-Mn-doped CCMTO samples (x=0.01 and 0.02) show that the relaxation time and the activation energy Ea were slightly reduced due to a decreased contribution from the density of the dipolar effect. However, in heavily doped CCMTO samples (x=0.03, 0.04, and 0.05), the dielectric response, relaxation time, and Ea were significantly decreased, suggesting Mn doping plays a significant role in the destruction of the intrinsic dipolar effect.

Classification of Solvents according to Interaction Mechanisms.

ERIC Educational Resources Information Center

Ahmed, Wasi

1979-01-01

Presented is a model for solvent effects based on the observation that the excitation energy of all-trans-N-Retinylidenmethyl-n-butylammonium iodide is directly related to the dielectric constant of a series of aromatic and aliphatic solvents as the dielectric constant (e) ranges from 2 to 10.5. (BT)

Impedance Discontinuity Reduction Between High-Speed Differential Connectors and PCB Interfaces

NASA Technical Reports Server (NTRS)

Navidi, Sal; Agdinaoay, Rodell; Walter, Keith

2013-01-01

High-speed serial communication (i.e., Gigabit Ethernet) requires differential transmission and controlled impedances. Impedance control is essential throughout cabling, connector, and circuit board construction. An impedance discontinuity arises at the interface of a high-speed quadrax and twinax connectors and the attached printed circuit board (PCB). This discontinuity usually is lower impedance since the relative dielectric constant of the board is higher (i.e., polyimide approx. = 4) than the connector (Teflon approx. = 2.25). The discontinuity can be observed in transmit or receive eye diagrams, and can reduce the effective link margin of serial data networks. High-speed serial data network transmission improvements can be made at the connector-to-board interfaces as well as improving differential via hole impedances. The impedance discontinuity was improved by 10 percent by drilling a 20-mil (approx. = 0.5-mm) hole in between the pin of a differential connector spaced 55 mils (approx. = 1.4 mm) apart as it is attached to the PCB. The effective dielectric constant of the board can be lowered by drilling holes into the board material between the differential lines in a quadrax or twinax connector attachment points. The differential impedance is inversely proportional to the square root of the relative dielectric constant. This increases the differential impedance and thus reduces the above described impedance discontinuity. The differential via hole impedance can also be increased in the same manner. This technique can be extended to multiple smaller drilled holes as well as tapered holes (i.e., big in the middle followed by smaller ones diagonally).

Effect of heat treatment on morphological, structural and optical properties of CoMTPP thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Ammar, A. H.; Farag, A. A. M.; Atta, A. A.; El-Zaidia, E. F. M.

2011-03-01

The morphologies and crystal structures of 5,10,15,20-tetrakis(4-methoxyphenyl)-21 H,23 H-porphine cobalt(II), CoMTPP, thin films were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. Optical constants namely the refractive index, n, and the absorption index, k, of CoMTPP were estimated by using spectrophotometric measurements of transmittance and reflectance in the spectral range from 200 to 2500 nm. The dispersion of the refractive index in terms of the single oscillator in the transparent region is discussed. The single oscillator energy ( E0), the dispersion energy ( E d), the high frequency dielectric constant ( ɛ∞) and the lattice dielectric constant ( ɛ L) were calculated. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region reveals two indirect allowed transitions for as-deposited and annealed films.

Nanocomposites for high-speed optical modulators and plasmonic thermal mid-infrared emitters

NASA Astrophysics Data System (ADS)

Demir, Veysi

Demand for high-speed optical modulators and narrow-bandwidth infrared thermal emitters for numerous applications continues to rise and new optical devices are needed to deal with massive data flows, processing powers, and fabrication costs. Conventional techniques are usually hindered by material limitations or electronic interconnects and advances in organic nanocomposite materials and their integration into photonic integrated circuits (PICs) have been acknowledged as a promising alternative to single crystal techniques. The work presented in this thesis uses plasmonic and magneto-optic effects towards the development of novel optical devices for harnessing light and generating high bandwidth signals (>40GHz) at room and cryogenic temperatures (4.2°K). Several publications have resulted from these efforts and are listed at the end of the abstract. In our first published research we developed a narrow-bandwidth mid-infrared thermal emitter using an Ag/dielectric/Ag thin film structure arranged in hexagonal planar lattice structures. PECVD produced nanoamorphous carbon (NAC) is used as a dielectric layer. Spectrally tunable (>2 mum) and narrow bandwidth (<0.5 mum) emission peaks in the range of 4-7 mum were demonstrated by decreasing the resistivity of NAC from 1012 and 109 O.cm with an MoSi2 dopant and increasing the emitter lattice constant from 4 to 7 mum. This technique offers excellent flexibility for developing cost-effective mid-IR sources as compared to costly fiber and quantum cascade lasers (QCLs). Next, the effect of temperature on the Verdet constant for cobalt-ferrite polymer nanocomposites was measured for a series of temperatures ranging from 40 to 200°K with a Faraday rotation polarimeter. No visual change was observed in the films during thermal cycling, and ˜4x improvement was achieved at 40°K. The results are promising and further analysis is merited at 4.2°K to assess the performance of this material for cryogenic magneto-optic modulators for supercomputers. Finally, the dielectric constant and loss tangent of MAPTMS sol-gel films were measured over a wide range of microwave frequencies. The test structures were prepared by spin-coating sol-gel films onto metallized glass substrates. The dielectric properties of the sol-gel were probed with several different sets of coplanar waveguides (CPWs) electroplated onto sol-gel films. The dielectric constant and loss-tangent of these films were determined to be ˜3.1 and 3 x 10-3 at 35GHz. These results are very promising indicating that sol-gels are viable cladding materials for high-speed electro-optic polymer modulators (>40GHz).

Investigation of multiferroic behavior on flakes-like BiFeO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheikh, Javed R.; Gaikwad, Vishwajit M.; Acharya, Smita A., E-mail: saha275@yahoo.com

2016-05-23

In present work, multiferroic BiFeO{sub 3} was synthesized by hydrothermal route. The rhombohedral structure was confirmed X-ray diffraction pattern and data fitted with Reitveld refinement using Full-Prof software suite. SEM micrograph shows flake like morphology. Frequency and temperature dependence of dielectric constant and dielectric loss were studied and detected enhancement in dielectric constant. The magnetic measurement indicates antiferromagnetic nature of BFO. P-E curve shows ferroelectic hysteresis loop with remanent polarization (2Pr) 0.3518 µC/cm{sup 2}. The dielectric anomaly observed near T{sub N} can be assigned to magnetoelectric coupling which is useful in device application.

Influence of functional group on the electrical transport properties of polyvinyl alcohol grafted multiwall carbon nanotube composite thick film

NASA Astrophysics Data System (ADS)

Kumar Das, Amit; Dharmana, Reuben; Mukherjee, Ayan; Baba, Koumei; Hatada, Ruriko; Kumar Meikap, Ajit

2018-04-01

We present a novel technique to obtain a higher or lower value of dielectric constant due to the variation of a functional group on the surface of multiwall carbon nanotube (MWCNTs) for a polyvinyl alcohol (PVA) grafted MWCNT system. We have prepared PVA grafted pristine and different types of functionalized (-COOH, -OH, and -NH2) MWCNT nanocomposite films. The strong interfacial interaction between the host PVA matrix and nanofiller is characterized by different experimental techniques. The frequency variation of the electrical transport properties of the composite films is investigated in a wide temperature range (303 ≤ T ≤ 413 K) and frequency range (20 Hz ≤ f ≤ 1 MHz). The dielectric constant of the amine (-NH2) functionalized MWCNT incorporated PVA film is about 2 times higher than that of the pristine MWCNT embedded PVA film. The temperature variation of the dielectric constant shows an anomalous behaviour. The modified Cole-Cole equation simulated the experimentally observed dielectric spectroscopy at high temperature. The ac conductivity of the composite films obeys the correlated barrier hopping model. The imaginary part of the electric modulus study shows the ideal Debye-type behaviour at low frequency and deviation of that at high frequency. To illustrate the impedance spectroscopy of the nanocomposite films, we have proposed an impedance based battery equivalent circuit model. The current-voltage characteristic shows hysteresis behaviour of the nanocomposite films. The trap state height for all composite films is evaluated by simulating the current density-electric field data with the Poole-Frenkel emission model. This investigation opens a new avenue for designing electronic devices with a suitable combination of cost effective soft materials.

Modeling and characterization of dielectrophoretically structured piezoelectric composites using piezoceramic particle inclusions with high aspect ratios

NASA Astrophysics Data System (ADS)

van den Ende, D. A.; Maier, R. A.; van Neer, P. L. M. J.; van der Zwaag, S.; Randall, C. A.; Groen, W. A.

2013-01-01

In this work, the piezoelectric properties at high electric fields of dielectrophoretically aligned PZT—polymer composites containing high aspect ratio particles (such as short fibers) are presented. Polarization and strain as a function of electric field are evaluated. The properties of the composites are compared to those of PZT-polymer composites with equiaxed particles, continuous PZT fiber-polymer composites, and bulk PZT ceramics. From high-field polarization and strain measurements, the effective field dependent permittivity and piezoelectric charge constant in the poling direction are determined for dielectrophoresis structured PZT-polymer composites, continuous PZT fiber-polymer composites, and bulk PZT ceramics. The changes in dielectric properties of the inclusions and the matrix at high fields influence the dielectric and piezoelectric properties of the composites. It is found that the permittivity and piezoelectric charge constants increase towards a maximum at an applied field of around 2.5-5 kV/mm. The electric field at which the maximum occurs depends on the aspect ratio and degree of alignment of the inclusions. Experimental values of d33 at low and high applied fields are compared to a model describing the composites as a continuous polymer matrix containing PZT particles of various aspect ratios arranged into chains. Thickness mode coupling factors were determined from measured impedance data using fitted equivalent circuit model simulations. The relatively high piezoelectric strain constants, voltage constants, and thickness coupling factors indicate that such aligned short fiber composites could be useful as flexible large area transducers.

Phase evolution and grain-boundary contributions in CaCu3-xZnxTi4O12

NASA Astrophysics Data System (ADS)

Kwon, Oh Hyeon; Kim, Byeong Kon; Jo, Yeon Hwa; Sankar, Paul Gouri; Jung, Yul Gyo; Jung, Tae Sung; Lee, Jung Won; Cho, Yong Soo

2011-12-01

Extensive substitutions of Zn in Ca(Cu1-xZnx)3Ti4O12 (x = 0, 0.1, 0.5, 1.0 and 2.0) dielectrics are investigated in terms of the phase evolution, dielectric properties and grain boundary resistivity. The composition of CaCu2.9Zn0.1Ti4O12 (x = 0.1) densified at a relatively low sintering temperature of 1000°C showed a k value of approximately 7,000 and a tanδ value of approximately 0.07 at 10 kHz, which is better than the values for pure CaCu3Ti4O12 (CCTO). The improved dielectric properties are also believed to be related to the lower grain boundary resistivity of ˜1676 kΩ.cm, as obtained from a Cole-Cole plot. Beyond this level of Zn, the degradation of the dielectric constant was associated with unexpected crystalline phases, in this case Ca2Zn4Ti16O38, CaTiO3, and Zn2TiO4, which were observed as the level of Zn increased. Although the degradation does not match that of pure CCTO, an addition of Zn up to x=1.0 can hold the dielectric constant at the level of a few thousands, which is still promising compared to other high-k dielectric materials that must be densified below -1000°C to meet the subsequent microcircuit requirements.

The Relationship Between Chemical Structure and Dielectric Properties of Plasma-Enhanced Chemical Vapor Deposited Polymer Thin Films (Postprint)

DTIC Science & Technology

2007-01-01

C6H6, Aldrich Co., liquid , high performance liquid chromatography (HPLC) grade with a purity of 99.9%) and octafluorocyclobutane (C4F8, OFCB...attributed to the lack of molecular mobility (confined by the crosslinking) and low ionic polarization of the molecular structures [6]. The frequency...in dielectric constant at low frequencies can be traced to orientational polarizations of trapped free radicals, unpaired electron sites, oligomeric

Dielectric relaxation spectrum of undiluted poly(4-chlorostyrene), T≳Tg

NASA Astrophysics Data System (ADS)

Yoshihara, M.; Work, R. N.

1980-06-01

Dielectric relaxation characteristics of undiluted, atactic poly(4-chlorostyrene), P4CS, have been determined at temperatures 406 K⩽T⩽446 K from measurements made at frequencies 0.2 Hz⩽f⩽0.2 MHz. After effects of electrical conductivity are subtracted, it is found that the normalized complex dielectric constant K*=K'-i K″ can be represented quantitatively by the Havriliak-Negami (H-N) equation K*=[1+(iωτ0)1-α]-β, 0⩽α, β⩽1, except for a small, high frequency tail that appears in measurements made near the glass transition temperature, Tg. The parameter β is nearly constant, and α depends linearly on log τ0, where τ0 is a characteristic relaxation time. The parameters α and β extrapolate through values obtained from published data from P4CS solutions, and extrapolation to α=0 yields a value of τ0 which compares favorably with a published value for crankshaft motions of an equivalent isolated chain segment. These observations suggest that β may characterize effects of chain connectivity and α may describe effects of interactions of the surroundings with the chain. Experimental results are compared with alternative empirical and model-based representations of dielectric relaxation in polymers.

Giant dielectric constant in CaCu3Ti4O12-MgB2 composites near the percolation threshold

NASA Astrophysics Data System (ADS)

Mukherjee, Rupam; Fernandez, Lucia; Lawes, Gavin; Nadgorny, Boris

2013-03-01

We have investigated the enhancement of the dielectric constant K in CaCu3Ti4O12 (CCTO)-MgB2 composite near the percolation threshold. To optimize the dielectric properties of pure CCTO we have sintered the samples at variuos temperatures. We will present the results of the measurements of K in a broad frequency for pure CCTO for the samples sintered at 1100°C and 500°C. Commercially available MgB2 powder was mixed with different weight fractions of CCTO and the pressure of 1GPa was applied to form composite pellets. Near the percolation threshold PC, CCTO/MgB2 composite system exhibit a dramatic increase of the dielectric constant K by several orders of magnitude, compared to pure CCTO. We will also discuss the magnetic field dependence of the capacitance of CCTO composite powders.

Effect of organic flux on the colossal dielectric constant of CaCu3Ti4O12 (CCTO)

NASA Astrophysics Data System (ADS)

Razdan, Vishnu; Singh, Abhishek; Arnold, Brad; Choa, Fow-Sen; Kelly, Lisa; Singh, N. B.

2015-05-01

We have used low temperature organics to achieve orientation of the grains of Ca2/3Cu3Ti4O12 (CCTO) compound to increase the resistivity. During the past fifteen years CCTO has been studied extensively for its performance as a dielectric capacitor. We have synthesized and grown large grains of pure Ca2/3Cu3Ti4O12 and doped compound, and studied the dielectric constant and resistivity. The grains were aligned by using a naphthalene-camphor eutectic. CCTO was mixed in the organic melt and oriented by the directional solidification method. This material has different characteristics than pure processed CCTO material. The effect of solidification conditions and its effect on the morphology and the dielectric constant, resistivity and loss tan delta of pure and doped CCTO are described in this article.

Temperature-dependent ac conductivity and dielectric response of vanadium doped CaCu3Ti4O12 ceramic

NASA Astrophysics Data System (ADS)

Sen, A.; Maiti, U. N.; Thapa, R.; Chattopadhyay, K. K.

2011-09-01

Successful incorporation of vanadium dopant within the giant dielectric material CaCu 3Ti 4O12 (CCTO) through a conventional solid-state sintering process is achieved and its influence on the dielectric as well as electrical properties as a function of temperature and frequency is reported here. Proper crystalline phase formation together with dopant induced lattice constant shrinkage was confirmed through X-ray diffraction. The temperature dependence of the dielectric constant at different constant frequencies was investigated. We infer that the correlated barrier hopping (CBH) model is dominant in the conduction mechanism of the ceramic as per the temperature-dependent ac conductivity measurements. The electronic parameters such as density of the states at the Fermi level, N( E f) and hopping distance, R ω of the ceramic were also calculated using this model.

Aggregate linear properties of ferroelectric ceramics and polycrystalline thin films: Calculation by the method of effective piezoelectric medium

NASA Astrophysics Data System (ADS)

Pertsev, N. A.; Zembilgotov, A. G.; Waser, R.

1998-08-01

The effective dielectric, piezoelectric, and elastic constants of polycrystalline ferroelectric materials are calculated from single-crystal data by an advanced method of effective medium, which takes into account the piezoelectric interactions between grains in full measure. For bulk BaTiO3 and PbTiO3 polarized ceramics, the dependences of material constants on the remanent polarization are reported. Dielectric and elastic constants are computed also for unpolarized c- and a-textured ferroelectric thin films deposited on cubic or amorphous substrates. It is found that the dielectric properties of BaTiO3 and PbTiO3 polycrystalline thin films strongly depend on the type of crystal texture. The influence of two-dimensional clamping by the substrate on the dielectric and piezoelectric responses of polarized films is described quantitatively and shown to be especially important for the piezoelectric charge coefficient of BaTiO3 films.

New dielectric ceramics Pb(Cd)BiM/sup IV/SbO/sub 7/ (M/sup IV/ = Ti, Zr, Sn) with the pyrochlore structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lambachri, A.; Monier, M.; Mercurio, J.P.

1988-04-01

Dielectric ceramics have been obtained by natural sintering of pyrochlore phases with general formula Pb(Cd)BiM/sup IV/SbO/sub 7/ (M/sup IV/ = Ti, Zr, Sn). Low frequency dielectric characteristics have been studied with respect to the processing conditions: sintering without additive and in the presence of some low melting compounds (PbO, Pb/sub 5/Ge/sub 3/O/sub 11/, Bi/sub 12/PbO/sub 19/ and Bi/sub 12/CdO/sub 19/). The dielectric constants of these ceramics lie between 30 and 60, the dielectric losses range from 10 to 30.10/sup -4/ and the temperature coefficient of the dielectric constants (20 - 100/sup 0/C) can be tailored by means of additives inmore » the +- 30 ppm K/sup -1/ range.« less

Short range ferromagnetic, magneto-electric, and magneto-dielectric effect in ceramic Co{sub 3}TeO{sub 6}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Harishchandra, E-mail: singh85harish@gmail.com, E-mail: singh85harish@rrcat.gov.in; Ghosh, Haranath; Indus Synchrotrons Utilization Division, Raja Ramanna Center for Advanced Technology, Indore 452013

2016-01-28

We report observation of magneto-electric and magneto-dielectric couplings along with short range ferromagnetic order in ceramic Cobalt Tellurate (Co{sub 3}TeO{sub 6}, CTO) using magnetic, structural, dielectric, pyroelectric, and polarization studies. DC magnetization along with dielectric constant measurements indicate a coupling between magnetic order and electrical polarization. A strong anomaly in the dielectric constant at ∼17.4 K in zero magnetic field indicates spontaneous electric polarization, consistent with a recent neutron diffraction study. Observation of weak short range ferromagnetic order at lower temperatures is attributed to the Griffiths-like ferromagnetism. Furthermore, magnetic field dependence of the ferroelectric transition follows earlier theoretical predictions, applicable tomore » single crystal CTO. Finally, combined dielectric, pyroelectric, and polarization measurements suggest that the ground state of CTO may possess spontaneous symmetry breaking in the absence of magnetic field.« less

Optical properties of Sulfur doped InP single crystals

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.

2014-05-01

Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral range of 200-2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals exhibit allowed and forbidden direct transitions with energy gaps of 1.578 and 1.528 eV, respectively. Analysis of the refractive index in the normal dispersion region was discussed in terms of the single oscillator model. Some optical dispersion parameters namely: the dispersion energy (Ed), single oscillator energy (Eo), high frequency dielectric constant (ɛ∞), and lattice dielectric constant (ɛL) were determined. The volume and the surface energy loss functions (VELF & SELF) were estimated. Also, the real and imaginary parts of the complex conductivity were calculated.

Analysis of structural and optical properties of annealed fullerene thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Ali, H. A. M.; Gadallah, A.-S.; Atta Khedr, M.; Afify, H. A.

2015-08-01

Fullerene thin films were thermally deposited onto different substrates. The films annealed at 523 K for 10 h. X-ray diffraction technique was used to examine the structure of the films. The morphology of films was examined by field emission scanning electron microscopy. Fourier transform infrared spectra were recorded in wavenumber range 400-2000 cm-1. The optical characteristics were analyzed using UV- Vis-NIR spectrophotometric measurements in the spectral range 200-2500 nm. The refractive index and extinction coefficient were determined. Some dispersion parameters were calculated such as single oscillator energy, dispersion energy, dielectric constant at high frequency and lattice dielectric constant. As well as, the nonlinear optical susceptibility χ(3) and nonlinear refractive index n2 were determined.

Anomalous change in dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} under violet-to-ultraviolet irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masingboon, C.; Faculty of Science and Engineering, Kasetsart University, Chalermphrakiat Sakon Nakhon Province Campus, Sakon Nakhon 47000; Eknapakul, T.

2013-05-20

The influence of light illumination on the dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) polycrystals is studied in this work. When exposed to 405-nm laser light, a reversible enhancement in the room temperature capacitance as high as 22% was observed, suggesting application of light-sensitive capacitance devices. To uncover the microscopic mechanisms mediating this change, we performed electronic structure measurements, using photoemission spectroscopy, and measured the electrical conductivity of the CCTO samples under different conditions of light exposure and oxygen partial pressure. Together, these results suggest that the large capacitance enhancement is driven by oxygen vacancies induced by the irradiation.

Resonant tunneling of surface plasmon polariton in the plasmonic nano-cavity.

PubMed

Park, Junghyun; Kim, Hwi; Lee, Il-Min; Kim, Seyoon; Jung, Jaehoon; Lee, Byoungho

2008-10-13

We investigate the reflection and transmission characteristics of the low-dielectric constant cut off barrier in the metal-insulator-metal (MIM) waveguide and propose a novel plasmonic nano-cavity made of two cut off barriers and the waveguide between them. It is shown that the anti-symmetric mode in the MIM waveguide with the core of the low dielectric constant below the specific value cannot be supported and this region can be regarded as a cut off barrier with high stability. The phase shift due to the reflection at the finite-length cut off barrier is calculated and the design scheme of the cavity length for the resonant tunneling is presented. The transmission spectra through the proposed nano-cavity are also discussed.

Automated Microwave Dielectric Constant Measurement

DTIC Science & Technology

1987-03-01

IJSWC TR 86-46 AD.-A 184 182 AUTOMATED MICROWAVE DIELECTRIC CONSTANT MEASUREMENT SYTIEM BY B. C. GLANCY A. KRALL PESEARCH AND TECHNOLOGY DEPARTMENT...NO0. NO. ACCESSION NO. Silver Spring, Maryland 20903-500061152N ZROO1 ZRO131 R1AA29 11. TITLE (Include Security Classification) AUTOMATED MICROWAVE ...constants as a funct on of microwave frequency has been simplified using an automated testing apparatus. This automated procedure is based on the use of a

Anomalous response of supported few-layer hexagonal boron nitride to DC electric fields: a confined water effect?

NASA Astrophysics Data System (ADS)

Oliveira, Camilla; Matos, Matheus; Mazzoni, Mário; Chacham, Hélio; Neves, Bernardo

2013-03-01

Hexagonal boron nitride (h-BN) is a two-dimensional compound from III-V family, with the atoms of boron and nitrogen arranged in a honeycomb lattice, similar to graphene. Unlike graphene though, h-BN is an insulator material, with a gap larger than 5 eV. Here, we use Electric Force Microscopy (EFM) to study the electrical response of mono and few-layers of h-BN to an electric field applied by the EFM tip. Our results show an anomalous behavior in the dielectric response for h-BN for different bias orientation: for a positive bias applied to the tip, h-BN layers respond with a larger dielectric constant than the dielectric constant of the silicon dioxide substrate; while for a negative bias, the h-BN dielectric constant is smaller than the dielectric constant of the substrate. Based on first-principles calculations, we showed that this anomalous response may be interpreted as a macroscopic consequence of confinement of a thin water layer between h-BN and substrate. These results were confirmed by sample annealing and also also by a comparative analysis with h-BN on a non-polar substrate. All the authors acknowledge financial support from CNPq, Fapemig, Rede Nacional de Pesquisa em Nanotubos de Carbono and INCT-Nano-Carbono.

Review of Slow-Wave Structures

NASA Technical Reports Server (NTRS)

Wallett, Thomas M.; Qureshi, A. Haq

1994-01-01

The majority of recent theoretical and experimental reports published in the literature dealing with helical slow-wave structures focus on the dispersion characteristics and their effects due to the finite helix wire thickness and attenuation, dielectric loading, metal loading, and the introduction of plasma. In many papers, an effective dielectric constant is used to take into account helix wire dimensions and conductivity losses, while the propagation constant of the signal and the interaction impedance of the structure are found to depend on the surface resistivity of the helix. Also, various dielectric supporting rods are simulated by one or several uniform cylinders having an effective dielectric constant, while metal vane loading and plasma effects are incorporated in the effective dielectric constant. The papers dealing with coupled cavities and folded or loaded wave guides describe equivalent circuit models, efficiency enhancement, and the prediction of instabilities for these structures. Equivalent circuit models of various structures are found using computer software programs SUPERFISH and TOUCHSTONE. Efficiency enhancement in tubes is achieved through dynamic velocity and phase adjusted tapers using computer techniques. The stability threshold of unwanted antisymmetric and higher order modes is predicted using SOS and MAGIC codes and the dependence of higher order modes on beam conductance, section length, and effective Q of a cavity is shown.

Surface Plasmon Resonance Evaluation of Colloidal Metal Aerogel Filters

NASA Technical Reports Server (NTRS)

Smith, David D.; Sibille, Laurent; Cronise, Raymond J.; Noever, David A.

1997-01-01

Surface plasmon resonance imaging has in the past been applied to the characterization of thin films. In this study we apply the surface plasmon technique not to determine macroscopic spatial variations but rather to determine average microscopic information. Specifically, we deduce the dielectric properties of the surrounding gel matrix and information concerning the dynamics of the gelation process from the visible absorption characteristics of colloidal metal nanoparticles contained in aerogel pores. We have fabricated aerogels containing gold and silver nanoparticles. Because the dielectric constant of the metal particles is linked to that of the host matrix at the surface plasmon resonance, any change 'in the dielectric constant of the material surrounding the metal nanoparticles results in a shift in the surface plasmon wavelength. During gelation the surface plasmon resonance shifts to the red as the average or effective dielectric constant of the matrix increases. Conversely, formation of an aerogel or xerogel through supercritical extraction or evaporation of the solvent produces a blue shift in the resonance indicating a decrease in the dielectric constant of the matrix. From the magnitude of this shift we deduce the average fraction of air and of silica in contact with the metal particles. The surface area of metal available for catalytic gas reaction may thus be determined.

Comparison effects and dielectric properties of different dose methylene-blue-doped hydrogels.

PubMed

Yalçın, O; Coşkun, R; Okutan, M; Öztürk, M

2013-08-01

The dielectric properties of methylene blue (MB)-doped hydrogels were investigated by impedance spectroscopy. The real part (ε') and the imaginary part (ε") of the complex dielectric constant and the energy loss tangent/dissipation factor (tan δ) were measured in the frequency range of 10 Hz to 100 MHz at room temperature for pH 5.5 value. Frequency variations of the resistance, the reactance, and the impedance of the samples have also been investigated. The dielectric permittivity of the MB-doped hydrogels is sensitive to ionic conduction and electrode polarization in low frequency. Furthermore, the dielectric behavior in high-frequency parts was attributed to the Brownian motion of the hydrogen bonds. The ionic conduction for MB-doped samples was prevented for Cole-Cole plots, while the Cole-Cole plots for pure sample show equivalent electrical circuit. The alternative current (ac) conductivity increases with the increasing MB concentration and the frequency.

First-principles investigation of band offsets and dielectric properties of Silicon-Silicon Nitride interfaces

NASA Astrophysics Data System (ADS)

Pham, Tuan Anh; Li, Tianshu; Gygi, Francois; Galli, Giulia

2011-03-01

Silicon Nitride (Si3N4) is a possible candidate material to replace or be alloyed with SiO2 to form high-K dielectric films on Si substrates, so as to help prevent leakage currents in modern CMOS transistors. Building on our previous work on dielectric properties of crystalline and amorphous Si3N4 slabs, we present an analysis of the band offsets and dielectric properties of crystalline-Si/amorphous Si3N4 interfaces based on first principles calculations. We discuss shortcomings of the conventional bulk-plus line up approach in band offset calculations for systems with an amorphous component, and we present the results of band offsets obtained from calculations of local density of states. Finally, we describe the role of bonding configurations in determining band edges and dielectric constants at the interface. We acknowledge financial support from Intel Corporation.

Analytical scanning evanescent microwave microscope and control stage

DOEpatents

Xiang, Xiao-Dong; Gao, Chen; Duewer, Fred; Yang, Hai Tao; Lu, Yalin

2013-01-22

A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

Analytical scanning evanescent microwave microscope and control stage

DOEpatents

Xiang, Xiao-Dong; Gao, Chen; Duewer, Fred; Yang, Hai Tao; Lu, Yalin

2009-06-23

A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

Dielectric properties of grain-grainboundary binary system

NASA Astrophysics Data System (ADS)

Cheng, Peng-Fei; Li, Sheng-Tao; Wang, Hui

2014-09-01

Dielectric properties of grain-grainboundary binary system are analyzed theoretically and compared with unary system and classical Maxwell-Wagner (MW) polarization in binary system. It is found that MW polarization appears at higher frequency compared with intrinsic polarization for grain-grainboundary binary system, which is abnormal compared with classical dielectric theory. This dielectric anomaly is premised on the existence of electronic relaxation at grainboundary. The origin of giant dielectric constant of CaCu3Ti4O12 (CCTO) ceramics is also investigated on the basis of the theoretical results. It is proposed that low frequency relaxation originates from electronic relaxation of oxygen vacancy at depletion layer, while high frequency relaxation comes from MW polarization. The results of this paper offer a quantitative identification of MW polarization from intrinsic polarization at grainboundary and a judgment of the mechanism and location of a certain polarization in grain-grainboundary binary system.

Controlled thermal expansion printed wiring boards based on liquid crystal polymer dielectrics

NASA Technical Reports Server (NTRS)

Knoll, Thomas E.; Blizard, Kent; Jayaraj, K.; Rubin, Leslie S.

1994-01-01

Dielectric materials based on innovative Liquid Crystal Polymers (LCP's) have been used to fabricate surface mount printed wiring boards (PWB's) with a coefficient of thermal expansion matched to leadless ceramic chip carriers. Proprietary and patented polymer processing technology has resulted in self reinforcing material with balanced in-plane mechanical properties. In addition, LCP's possess excellent electrical properties, including a low dielectric constant (less than 2.9) and very low moisture absorption (less than 0.02%). LCP-based multilayer boards processed with conventional drilling and plating processes show improved performance over other materials because they eliminate the surface flatness problems of glass or aramid reinforcements. Laser drilling of blind vias in the LCP dielectric provides a very high density for use in direct chip attach and area array packages. The material is ideally suited for MCM-L and PCMCIA applications fabricated with very thin dielectric layers of the liquid crystal polymer.

Effect of solution combusted TiO2 nanopowder within commercial BaTiO3 dielectric layer on the photoelectric properties for AC powder electroluminescence devices.

PubMed

Park, Sung; Choi, Gil Rak; Kim, Youn Cheol; Lee, Jae Chun; Lee, Ju Hyeon

2013-05-01

A unique synthesis method was developed, which is called solution combustion method (SCM). TiO2 nanopowder was synthesized by this method. This SCM TiO2 nanopowder (-35 nm) was added to the dielectric layer of AC powder electroluminescence (EL) device. The dielectric layer was made of commercial BaTiO3 powder (-1.2 microm) and binding polymer. 0, 5, 10 and 15 wt% of SCM TiO2 nanopowder was added to the dielectric layer during fabrication of AC powder EL device respectively. Dielectric constant of these four kinds of dielectric layers was measured. The brightness and current density of AC powder EL device were also measured. When 10 wt% of SCM TiO2 nanopowder was added, dielectric constant and brightness were increased by 30% and 101% respectively. Furthermore, the current density was decreased by 71%. This means that the brightness was double and the power consumption was one third.

γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

NASA Astrophysics Data System (ADS)

Teffahi, A.; Hamri, D.; Djeghlouf, A.; Abboun Abid, M.; Saidane, A.; Al Saqri, N.; Felix, J. F.; Henini, M.

2018-06-01

Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90-290 K temperature range and 50-2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric constant, dielectric loss, tangent loss and ac conductivity. It is shown that exposure to γ-rays irradiation leads to reduction in effective trap density believed to result from radiation-induced traps annulations. An increase in series resistance is attributed to a net doping reduction. Dielectric constant (ε') shows usual step-like transitions with corresponding relaxation peaks in dielectric loss. These peaks shift towards lower temperature as frequency decrease. Temperature dependant ac conductivity followed an Arrhenius relation with activation energy of 153 meV in the 200-290 K temperature range witch correspond to As vacancy. The results indicate that γ-rays irradiation improves the dielectric and electrical properties of the diode due to the defect annealing effect.

Use of Ground Penetrating Radar at the FAA's National Airport Pavement Test Facility

NASA Astrophysics Data System (ADS)

Injun, Song

2015-04-01

The Federal Aviation Administration (FAA) in the United States has used a ground-coupled Ground Penetrating Radar (GPR) at the National Airport Pavement Test Facility (NAPTF) since 2005. One of the primary objectives of the testing at the facility is to provide full-scale pavement response and failure information for use in airplane landing gear design and configuration studies. During the traffic testing at the facility, a GSSI GPR system was used to develop new procedures for monitoring Hot Mix Asphalt (HMA) pavement density changes that is directly related to pavement failure. After reviewing current setups for data acquisition software and procedures for identifying different pavement layers, dielectric constant and pavement thickness were selected as dominant parameters controlling HMA properties provided by GPR. A new methodology showing HMA density changes in terms of dielectric constant variations, called dielectric sweep test, was developed and applied in full-scale pavement test. The dielectric constant changes were successfully monitored with increasing airplane traffic numbers. The changes were compared to pavement performance data (permanent deformation). The measured dielectric constants based on the known HMA thicknesses were also compared with computed dielectric constants using an equation from ASTM D4748-98 Standard Test Method for Determining the Thickness of Bound Pavement Layers Using Short-Pulse Radar. Six inches diameter cylindrical cores were taken after construction and traffic testing for the HMA layer bulk specific gravity. The measured bulk specific gravity was also compared to monitor HMA density changes caused by aircraft traffic conditions. Additionally this presentation will review the applications of the FAA's ground-coupled GPR on embedded rebar identification in concrete pavement, sewer pipes in soil, and gage identifications in 3D plots.

Constraining Bulk Densities of Near-Earth Asteroid Surfaces from Radar Observations Using Laboratory Measurements of Permittivity

NASA Astrophysics Data System (ADS)

Hickson, D. C.; Boivin, A.; Daly, M. G.; Ghent, R. R.; Nolan, M. C.; Tait, K.; Cunje, A.; Tsai, C. A.

2017-12-01

Planetary radar is widely used to survey the Near-Earth Asteroid (NEA) population and can provide insight into target shapes, sizes, and spin states. The dual-polarization reflectivity is sensitive to surface roughness as well as material properties, specifically the real part of the complex permittivity, or dielectric constant. Knowledge of the behavior of the dielectric constant of asteroid regolith analogue material with environmental parameters can be used to inversely solve for such parameters, such as bulk density, from radar observations. In this study laboratory measurements of the complex permittivity of powdered aluminum oxide and dunite samples are performed in a low-pressure environment chamber using a coaxial transmission line from roughly 1 GHz to 8.5 GHz. The bulk densities of the samples are varied across the measurements by incrementally adding silica aerogel, a low-density material with a very low dielectric constant. This allows the alteration of the proportions of void space to solid particle grains to achieve microgravity-relevant porosities without significantly altering the dielectric properties of the powder sample. The data are then modeled using various electromagnetic mixing equations to characterize the change in dielectric constant with increasing volume fractions of void space (decreasing bulk density). Using spectral analogues as constraints on the composition of NEAs allows us to calculate the range in bulk densities in the near surface of NEAs that have been observed by planetary radar. Utilizing existing radar data from Arecibo Observatory we calculate the bulk density in the near-surface on (101955) Bennu, the target of NASA's OSIRIS-Rex mission, to be ρ = 1.27 ± 0.33 g cm-3 based on an average of the likely range in particle density and dielectric constant of the regolith material.

THE ONSET OF ELECTRICAL BREAKDOWN IN DUST LAYERS: II. EFFECTIVE DIELECTRIC CONSTANT AND LOCAL FIELD ENHANCEMENT

EPA Science Inventory

Part 1 of the work has shown that electrical breakdown in dust layers obeys Paschen's Law, but occurs at applied field values which appear too small to initiate the breakdown. In this paper the authors show how an effective dielectric constant characterizing the dust layer can be...

Process for lowering the dielectric constant of polyimides using diamic acid additives

NASA Technical Reports Server (NTRS)

Stoakley, Diane M. (Inventor); St.clair, Anne K. (Inventor)

1990-01-01

Linear aromatic polyimides with low dielectric constants are produced by adding a diamic acid additive to the polyamic acid resin formed by the condensation of an aromatic dianhydride with an aromatic diamine. The resulting modified polyimide is a better electrical insulator than state-of-the-art commercially available polyimides.

Microwave dielectric measurements of erythrocyte suspensions.

PubMed Central

Bao, J Z; Davis, C C; Swicord, M L

1994-01-01

Complex dielectric constants of human erythrocyte suspensions over a frequency range from 45 MHz to 26.5 GHz and a temperature range from 5 to 40 degrees C have been determined with the open-ended coaxial probe technique using an automated vector network analyzer (HP 8510). The spectra show two separate major dispersions (beta and gamma) and a much smaller dispersion between them. The two major dispersions are analyzed with a dispersion equation containing two Cole-Cole functions by means of a complex nonlinear least squares technique. The parameters of the equation at different temperatures have been determined. The low frequency behavior of the spectra suggests that the dielectric constant of the cell membrane increases when the temperature is above 35 degrees C. The real part of the dielectric constant at approximately 3.4 GHz remains almost constant when the temperature changes. The dispersion shifts with temperature in the manner of a thermally activated process, and the thermal activation enthalpies for the beta- and gamma-dispersions are 9.87 +/- 0.42 kcal/mol and 4.80 +/- 0.06 kcal/mol, respectively. PMID:8075351

Effect of N2 Plasma Annealing on Properties of Fluorine Doped Silicon Dioxide Films with Low Dielectric Constant for Ultra-Large-Scale Integrated Circuits

NASA Astrophysics Data System (ADS)

Zhang, Wei; Wang, Peng-Fei; Ding, Shi-Jin; Wang, Ji-Tao; William, Wei Lee

2002-06-01

The influence of N2 plasma annealing on the properties of fluorine doped silicon oxide (SiOF) films is investigated. The stability of the dielectric constant of SiOF film is remarkably improved by the N2 plasma annealing. After enduring a moisture absorption test for six hours in a chamber with 60% humidity at 50°C, the dielectric constant variation of the annealed SiOF films is only 1.5%, while the variation for those SiOF films without annealing is 15.5%. Fourier transform infrared spectroscopic results show that the absorption peaks of Si-OH and H-OH of SiOF films are reduced after the N2 plasma annealing because the annealing can wipe off some unstable Si-F2 bonds in SiOF films. These unstable Si-F2 bonds are suitable to react with water, resulting in the degradation of SiOF film properties. Therefore, the N2 plasma annealing meliorates the properties of SiOF films with low dielectric constant.

Low dielectric constant and moisture-resistant polyimide aerogels containing trifluoromethyl pendent groups

NASA Astrophysics Data System (ADS)

Wu, Tingting; Dong, Jie; Gan, Feng; Fang, Yuting; Zhao, Xin; Zhang, Qinghua

2018-05-01

Conventional polyimide aerogels made from biphenyl-3,3‧,4,4‧-tetracarboxylic dianydride (BPDA) and 4,4‧-oxidianiline (ODA) exhibit poor resistance to moisture and mechanical properties. In this work, a versatile diamine, 2,2‧-bis-(trifluoromethyl)-4,4‧-diaminobiphenyl (TFMB), is introduced to BPDA/ODA backbone to modify the comprehensive performance of this aerogel. Among all formulations, the resulted polyimide aerogels exhibit the lowest shrinkage and density as well as highest porosity, at the ODA/TFMB molar ratio of 5/5. Dielectric constants and loss tangents of the aerogels fall in the range of 1.29-1.33 and 0.001-0.004, respectively, and more TFMB fractions results in a slightly decrease of dielectric constant and loss tangent. In addition, moisture-resistance of the aerogels are dramatically enhanced as the water absorption decreasing from 415% for BPDA/ODA to 13% for the polyimide aerogel at the ODA/TFMB molar ratio of 7/3, and even to 4% for the homo-BPDA/TFMB polyimide aerogel, showing a superhydrophobic characteristic, which is a great advantage for polyimide aerogels used as low dielectric materials. Meanwhile, all of formulations of aerogels exhibit high absorption capacities for oils and common organic solvents, indicating that these fluorinated polyimide aerogels are good candidates for the separation of oils/organic solvents and water. Mechanical properties and thermal stability of the polyimide aerogels are also raised to varying degrees due to the rigid-rod biphenyl structure introduced by TFMB.

Perturbation-iteration theory for analyzing microwave striplines

NASA Technical Reports Server (NTRS)

Kretch, B. E.

1985-01-01

A perturbation-iteration technique is presented for determining the propagation constant and characteristic impedance of an unshielded microstrip transmission line. The method converges to the correct solution with a few iterations at each frequency and is equivalent to a full wave analysis. The perturbation-iteration method gives a direct solution for the propagation constant without having to find the roots of a transcendental dispersion equation. The theory is presented in detail along with numerical results for the effective dielectric constant and characteristic impedance for a wide range of substrate dielectric constants, stripline dimensions, and frequencies.

Reversible Phase Transition with Ultralarge Dielectric Relaxation Behaviors in Succinimide Lithium(I) Hybrids.

PubMed

Tang, Yun-Zhi; Wang, Bin; Zhou, Hai-Tao; Chen, Shao-Peng; Tan, Yu-Hui; Wang, Chang-Feng; Yang, Chang-Shan; Wen, He-Rui

2018-02-05

Dielectric relaxations have widely applied on high permittivity capacitors, dielectric switches, ferroelectrics, pyroelectrics, and electrical insulating materials. However, few investigations of large dielectric relaxation behaviors on organic-inorganic hybrid materials have been documented before. Here we present a novel two-dimensional succinimide lithium(I) hybrid compound, [Li(PDD) 2 ClO 4 ] n , 1, (PDD = 2,5-pyrrolidinedione = succinimide) which shows reversible phase transition behavior in the vicinity of 228 K accompanied by an unusual symmetry breaking from I4 1 /amd to C2/c. X-ray single crystal diffractions analysis indicates the twist motion of pyrrolidine heterocycles, and order-disorder motion of ClO 4 - anions triggered the reversible phase transition. By means of an intuitive crystallographic model (rattling ion model), we further illustrated the mechanism of the interesting reversible phase transition. Particularly, 1 shows ultralarge dielectric relaxation behavior in the vicinity of the phase transition by its dielectric constant dependence on temperatures and frequencies as well as its Cole-Cole relation.

Giant dielectric response in (Sr, Sb) codoped CaCu3Ti4O12 ceramics: A novel approach

NASA Astrophysics Data System (ADS)

Pradhan, M. K.; Rao, T. Lakshmana; Karna, Lipsarani; Dash, S.

2018-04-01

The CaCu3Ti4O12 (CCTO) remains as the best material for practical applications due to its high dielectric constant. To improve further the dielectric properties of CCTO to several orders in magnitude, a novel approach is adopted by codoping of Sr, Sb ions. The ceramic samples were fabricated by the conventional solid state route. The structure, morphology and detail dielectric properties were investigated systematically. All the samples crystalizes in a cubic symmetry with Im-3 space group. Sr substituted in Ca site can effectively suppress the grain growth, achieving a fine grained ceramic structure; however the grain size decreased slightly as Sb concentration increased further; whereas the dielectric permittivity of the ceramics increased drastically. The giant dielectric response was considered to be closely related with a reduction in the potential barrier height at grain boundaries (GBs) supported by the reduction in the activation energy for the conduction process.

Study of the structure and dielectric relaxation behavior of Pb(Ni 1/3Nb 2/3)-PbTiO 3 ferroelectric ceramics

NASA Astrophysics Data System (ADS)

Lei, Chao; Chen, Kepi; Zhang, Xiaowen; Wang, Jun

2002-08-01

Relaxor-type ferroelectric ceramics, (1- x)Pb(Ni 1/3Nb 2/3)O 3- xPbTiO 3 ( x=0.28-0.42) were synthesized by the columbite precursor method. The phase structure and dielectric properties were investigated. X-ray diffraction results demonstrate that a region with both pseudocubic and tetragonal phase in existence lies in the composition range x=0.34-0.38, which is the morphotropic phase boundary (MPB). Examination of the dielectric behavior indicates that the ceramics exhibit abnormal high dielectric constant near the MPB composition. In addition, the transformation of (1- x)PNN- xPT from relaxor to normal ferroelectric behavior with the PT content increasing is successive.

Structure-property relationships in polymers for dielectric capacitors

NASA Astrophysics Data System (ADS)

Gupta, Sahil

Effective energy storage is a key challenge of the 21st century that has fueled research in the area of energy storage devices. In this dissertation, structure-property relationships have been evaluated for polymers that might be suitable for storing energy in high-energy density, high-temperature capacitors. Firstly, hydroxyl-modified polypropylenes (PPOH) were synthesized by copolymerization of the propylene and undecenyloxytrimethylsilane monomers. The presence of H-bonding in PPOH copolymers increased their glass-transition temperature. Steric hindrance by the comonomer reduced the PP crystal growth rate and crystal size, resulting in a melting point depression. The comonomer was restricted outside the crystalline domains leaving the alpha-monoclinic crystal structure of PP unaffected, but increasing the fold-surface free energy. Crystallization was slower for PPOH copolymers than PP, but exhibited a skewed bell curve as a function of hydroxyl concentration. H-bonding persisted even at melt temperatures up to 250°C resulting in a higher elasticity and viscosity for PPOH copolymers. Secondly, sulfonated poly(ether ether ketone) (HSPEEK) was synthesized by sulfonating PEEK with sulfuric acid, and further neutralized with Zn to obtain ZnSPEEK. The thermal and dielectric properties of SPEEK were compared with PEEK. The glass-transition increased and melting point were high enough to enable the use of polymer at 180°C. The incorporation of sulfonic groups in PEEK increased the dielectric constant. HSPEEK had a higher dielectric constant than ZnSPEEK due to higher dipolar mobility, but the dielectric loss was also higher for HSPEEK due to electrode polarization and DC conduction. These results were consistent with our observations from sulfonated polystyrene (HSPS), which was used as a >model&lang' polymer. Lastly, commercial poly(4-methyl-1-pentene) (P4MP) was characterized to check its viability as a high-temperature polymer dielectric. Thermal stability up to 200°C, high melting point (> 225°C) and melting onset at 160 - 190°C indicated that P4MP could be used at 180 - 200°C. Thin free-standing films (~10 mum) with controlled crystal structure and surface morphology were prepared using blade coating and their drying dynamics were measured using a custom-designed solvent-casting platform. These films were further stretched uniaxially or biaxially, and their effect on the dielectric properties of P4MP was studied.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stiubianu, George, E-mail: george.stiubianu@icmpp.ro; Bele, Adrian; Cazacu, Maria

Highlights: • Composite ceramics nanoparticles (MCN) with zirconium dioxide and lead zirconate. • Dielectric elastomer films wDith PDMS matrix and MCN as dielectric filler. • Hydrophobic character—water resistant and good flexibility specific to siloxanes. • Increased value of dielectric constant with the content of MCN in dielectric films. • Increased energy output from uniaxial deformation of the dielectric elastomer films. - Abstract: A ceramic material consisting in a zirconium dioxide-lead zirconate mixture has been obtained by precipitation method, its composition being proved by wide angle X-ray powder diffraction and energy-dispersive X-ray spectroscopy. The average diameter of the ceramic particles rangedmore » between 50 and 100 nm, as revealed by transmission electron microscopy images. These were surface treated and used as filler for a high molecular mass polydimethylsiloxane-α,ω-diol (Mn = 450,000) prepared in laboratory, the resulted composites being further processed as films and crosslinked. A condensation procedure, unusual for polydimethylsiloxane having such high molecular mass, with a trifunctional silane was approached for the crosslinking. The effect of filler content on electrical and mechanical properties of the resulted materials was studied and it was found that the dielectric permittivity of nanocomposites increased in line with the concentration of ceramic nanoparticles.« less

Ferroelectric polymer dielectrics: Emerging materials for future electrostatic energy storage applications

NASA Astrophysics Data System (ADS)

Panda, Maheswar

2018-05-01

In this manuscript, the dielectric behavior of a variety of ferroelectric polymer dielectrics (FPD), which may bethe materials for future electrostatic energy storage application shave been discussed. The variety of polymer dielectrics, comprising of ferroelectric polymer[polyvinylidene fluoride (PVDF)]/non-polarpolymer [low density polyethylene (LDPE)] and different sizes of metal particles (Ni, quasicrystal of Al-Cu-Fe) as filler, were prepared through different process conditions (cold press/hot press) and are investigated experimentally. Very high values of effective dielectric constants (ɛeff) with low loss tangent (Tan δ) were observed forall the prepared FPD at their respective percolation thresholds (fc). The enhancement of ɛeff and Tan δ at the insulator to metal transition (IMT) is explained through the boundary layer capacitor effect and the percolation theory respectively. The non-universal fc/critical exponents across the IMT have been explained through percolation theory andis attributed to the fillerparticle size& shape, interaction between the components, method of their preparation, adhesiveness, connectivity and homogeneity, etc. of the samples. Recent results on developed FPD with high ɛeff and low Tan δ prepared through cold press have proven themselves to be the better candidates for low frequency and static dielectric applications.

Ultralow-k nanoporous organosilicate dielectric films imprinted with dendritic spheres.

PubMed

Lee, Byeongdu; Park, Young-Hee; Hwang, Yong-Taek; Oh, Weontae; Yoon, Jinhwan; Ree, Moonhor

2005-02-01

Integrated circuits that have improved functionality and speed in a smaller package and that consume less power are desired by the microelectronics industry as well as by end users, to increase device performance and reduce costs. The fabrication of high-performance integrated circuits requires the availability of materials with low or ultralow dielectric constant (low-k: k

Effect of grain size on structural and dielectric properties of barium titanate piezoceramics synthesized by high energy ball milling

NASA Astrophysics Data System (ADS)

Verma, Narendra Kumar; Patel, Sandeep Kumar Singh; Kumar, Dinesh; Singh, Chandra Bhal; Singh, Akhilesh Kumar

2018-05-01

We have investigated the effect of sintering temperature on the densification behaviour, grain size, structural and dielectric properties of BaTiO3 ceramics, prepared by high energy ball milling method. The Powder x-ray diffraction reveals the tetragonal structure with space group P4mm for all the samples. The samples were sintered at four different temperatures, (T = 900°C, 1000°C, 1100°C, 1200°C and 1300°C). Density increased with increasing sintering temperature, reaching up to 97% at 1300°C. A grain growth was observed with increasing sintering temperature. Impedance analyses of the sintered samples at various temperatures were performed. Increase in dielectric constant and Curie temperature is observed with increasing sintering temperature.

Controlling the preferential orientation in sol-gel prepared CaCu3Ti4O12 thin films by LaAlO3 and NdGaO3 substrates

NASA Astrophysics Data System (ADS)

Pongpaiboonkul, Suriyong; Kasa, Yumairah; Phokharatkul, Ditsayut; Putasaeng, Bundit; Hodak, Jose H.; Wisitsoraat, Anurat; Hodak, Satreerat K.

2016-11-01

Researchers have paid considerable attention to CaCu3Ti4O12 (CCTO) due to the colossal dielectric constant over a wide range of frequency and temperature. Despite of the growing number of works dealing with CCTO, there have been few studies of the role played by the substrate in inducing structural and dielectric effects of this material. In this work, highly-oriented CCTO thin films have been deposited on LaAlO3(100), NdGaO3(100) and NdGaO3(110) substrates using a sol-gel method. These single crystal substrates were chosen in terms of small lattice mismatch between CCTO and the substrate. The X-ray diffraction patterns showed that the CCTO film layers grow with different orientations depending upon the substrate used. We show that the preferred orientation of CCTO thin films can be manipulated to a high degree by growing it on specific crystal planes of the substrates without the use of buffer layers. Colossal dielectric constants are observed in our films which appear to correlate with the film crystallinity and preferred orientation.

Influence of SiO2 Addition on Properties of PTFE/TiO2 Microwave Composites

NASA Astrophysics Data System (ADS)

Yuan, Ying; Wang, Jie; Yao, Minghao; Tang, Bin; Li, Enzhu; Zhang, Shuren

2018-01-01

Composite substrates for microwave circuit applications have been fabricated by filling polytetrafluoroethylene (PTFE) polymer matrix with ceramic powder consisting of rutile TiO2 ( D 50 ≈ 5 μm) partially substituted with fused amorphous SiO2 ( D 50 ≈ 8 μm) with composition x vol.% SiO2 + (50 - x) vol.% TiO2 ( x = 0, 3, 6, 9, 12), and the effects of SiO2 addition on characteristics such as the density, moisture absorption, microwave dielectric properties, and thermal properties systematically investigated. The results show that the filler was well distributed throughout the matrix. High dielectric constant ( ɛ r > 7.19) and extremely low moisture absorption (<0.02%) were obtained, resulting from the relatively high density of the composites. The ceramic particles served as barriers and improved the thermal stability of the PTFE polymer, retarding its decomposition. The temperature coefficient of dielectric constant ( τ ɛ ) of the composites shifted toward the positive direction (from - 309 ppm/°C to - 179 ppm/°C) as the SiO2 content was increased, while the coefficient of thermal expansion remained almost unchanged (˜ 35 ppm/°C).

Colossal dielectric constants in single-crystalline and ceramic CaCu3Ti4O12 investigated by broadband dielectric spectroscopy

NASA Astrophysics Data System (ADS)

Krohns, S.; Lunkenheimer, P.; Ebbinghaus, S. G.; Loidl, A.

2008-04-01

In the present work, the authors report results of broadband dielectric spectroscopy on various samples of CaCu3Ti4O12 (CCTO), also including single-crystalline material, which so far was only rarely investigated. The measurements extend up to 1.3 GHz, covering more than nine frequency decades. We address the question of the origin of the colossal dielectric constants and of the relaxational behavior in this material, including the second relaxation reported in several recent works. For this purpose, the dependence of the temperature- and frequency-dependent dielectric properties on different tempering and surface treatments of the samples and on ac-field amplitude is investigated. Broadband spectra of a single crystal are analyzed by an equivalent circuit description by assuming two highly resistive layers in series to the bulk. Good fits could be achieved, including the second relaxation, which also shows up in single crystals. The temperature- and frequency-dependent intrinsic conductivity of CCTO is consistent with the variable range hopping model. The second relaxation is sensitive to surface treatment and, in contrast to the main relaxation, is also strongly affected by the applied ac voltage. Concerning the origin of the two insulating layers, we discuss a completely surface-related mechanism by assuming the formation of a metal-insulator diode and a combination of surface and internal barriers.

Thickness Dependent Structural and Dielectric Properties of Calcium Copper Titanate Thin Films Produced by Spin-Coating Method for Microelectronic Devices

NASA Astrophysics Data System (ADS)

Thiruramanathan, P.; Sankar, S.; Marikani, A.; Madhavan, D.; Sharma, Sanjeev K.

2017-07-01

Calcium copper titanate (CaCu3Ti4O12, CCTO) thin films have been deposited on platinized silicon [(111)Pt/Ti/SiO2/Si] substrate through a sol-gel spin coating technique and annealed at 600-900°C with a variation of 100°C per sample for 3 h. The activation energy for crystalline growth, as well as optimal annealing temperature (900°C) of the CCTO crystallites was studied by x-ray diffraction analysis (XRD). Thickness dependent structural, morphological, and optical properties of CCTO thin films were observed. The field emission scanning electron microscopy (FE-SEM) verified that the CCTO thin films are uniform, fully covered, densely packed, and the particle size was found to be increased with film thickness. Meanwhile, quantitative analysis of dielectric properties (interfacial capacitance, dead layers, and bulk dielectric constant) of CCTO thin film with metal-insulator-metal (M-I-M) structures has been investigated systematically using a series capacitor model. Room temperature dielectric properties of all the samples exhibit dispersion at low frequencies, which can be explained based on Maxwell-Wagner two-layer models and Koop's theory. It was found that the 483 nm thick CCTO film represents a high dielectric constant ( ɛ r = 3334), low loss (tan δ = 3.54), capacitance ( C = 4951 nF), which might satisfy the requirements of embedded capacitor.

Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

PubMed

Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

2010-09-24

A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

Structural, photoconductivity, and dielectric studies of polythiophene-tin oxide nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murugavel, S., E-mail: starin85@gmail.com; Malathi, M., E-mail: mmalathi@vit.ac.in

2016-09-15

Highlights: • Synthesis of polythiophene-tin oxide nanocomposites confirmed by FTIR and EDAX. • SEM shows SnO{sub 2} nanoparticles embedded within polythiophene matrix. • Stability and isoelectric point suggest nanoparticle–matrix interaction. • High dielectric constant due to high Maxwell–Wagner interfacial polarization. - Abstract: Polythiophene-tinoxide (PT-SnO{sub 2}) nanocomposites were prepared by in situ chemical oxidative polymerization, in the presence of various concentrations of SnO{sub 2} nanoparticles. Samples were characterized by X-ray diffraction, Fourier-transform infrared spectroscopy, thermogravimetric analysis, X-ray photoelectron spectroscopy and Zeta potential measurements. Morphologies and elemental compositions were investigated by transmission electron microscopy, field-emission scanning electron microscopy and energy-dispersive X-ray spectroscopy.more » The photoconductivity of the nanocomposites was studied by field-dependent dark and photo conductivity measurements. Their dielectric properties were investigated using dielectric spectroscopy, in the frequency range of 1kHz–1 MHz. The results indicated that the SnO{sub 2} nanoparticles in the PT-SnO{sub 2} nanocomposite were responsible for its enhanced dielectric performance.« less