Dielectric loss of strontium titanate thin films

NASA Astrophysics Data System (ADS)

Dalberth, Mark Joseph

1999-12-01

Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

Study of dielectric phenomenon for P3HT: PCBM blend

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Kumar, Manoj; Rathi, Sonika; Singh, Amarjeet

2017-05-01

In this present work we prepared the film sample of blend (P3HT (poly (3-hexylthiophene-2, 5-diyl)): PCBM ([6,6]-phenyl C61-butyric acid methyl ester)), P3HT and PCBM solution on ITO substrate by drop cast method. Capacitance and tangent loss (tan δ) were measured and dielectric constants έ and dielectric loss ɛ″ were deduced from them as function frequency at room temperature. Blend samples show strong frequency dependence as compared to pristine P3HT and pristine PCBM sample. The high dielectric constant in blend films at low frequency was attributed to characteristic slow relaxation process in polymers along with polarization of isolated grains in the blend sample.

Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films

NASA Astrophysics Data System (ADS)

Jain, Pushkar; Juneja, Jasbir S.; Bhagwat, Vinay; Rymaszewski, Eugene J.; Lu, Toh-Ming; Cale, Timothy S.

2005-05-01

The effects of substrate heating on the stoichiometry and the electrical properties of pulsed dc reactively sputtered tantalum oxide films over a range of film thickness (0.14 to 5.4 μm) are discussed. The film stoichiometry, and hence the electrical properties, of tantalum oxide films; e.g., breakdown field, leakage current density, dielectric constant, and dielectric loss are compared for two different cases: (a) when no intentional substrate/film cooling is provided, and (b) when the substrate is water cooled during deposition. All other operating conditions are the same, and the film thickness is directly related to deposition time. The tantalum oxide films deposited on the water-cooled substrates are stoichiometric, and exhibit excellent electrical properties over the entire range of film thickness. ``Noncooled'' tantalum oxide films are stoichiometric up to ~1 μm film thickness, beyond that the deposited oxide is increasingly nonstoichiometric. The presence of partially oxidized Ta in thicker (>~1 μm) noncooled tantalum oxide films causes a lower breakdown field, higher leakage current density, higher apparent dielectric constant, and dielectric loss. The growth of nonstoichiometric tantalum oxide in thicker noncooled films is attributed to decreased surface oxygen concentration due to oxygen recombination and desorption at higher film temperatures (>~100 °C). The quantitative results presented reflect experience with a specific piece of equipment; however, the procedures presented can be used to characterize deposition processes in which film stoichiometry can change.

Frequency and Temperature Dependent Dielectric Properties of Free-standing Strontium Titanate Thin Films.

NASA Astrophysics Data System (ADS)

Dalberth, Mark J.; Stauber, Renaud E.; Anderson, Britt; Price, John C.; Rogers, Charles T.

1998-03-01

We will report on the frequency and temperature dependence of the complex dielectric function of free-standing strontium titanate (STO) films. STO is an incipient ferroelectric with electric-field tunable dielectric properties of utility in microwave electronics. The films are grown epitaxially via pulsed laser deposition on a variety of substrates, including lanthanum aluminate (LAO), neodymium gallate (NGO), and STO. An initial film of yttrium barium cuprate (YBCO) is grown on the substrate, followed by deposition of the STO layer. Following deposition, the sacrificial YBCO layer is chemically etched away in dilute nitric acid, leaving the substrate and a released, free-standing STO film. Coplanar capacitor structures fabricated on the released films allow us to measure the dielectric response. We observe a peak dielectric function in excess of 5000 at 35K, change in dielectric constant of over a factor of 8 for 10Volt/micron electric fields, and temperature dependence above 50K that is very similar to bulk material. The dielectric loss shows two peaks, each with a thermally activated behavior, apparently arising from two types of polar defects. We will discuss the correlation between dielectric properties, growth conditions, and strain in the free-standing STO films.

Effect of bottom electrode on dielectric property of sputtered-(Ba,Sr)TiO{sub 3} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ito, Shinichi; Yamada, Tomoaki; Takahashi, Kenji

2009-03-15

(Ba{sub 0.5}Sr{sub 0.5})TiO{sub 3} (BST) films were deposited on (111)Pt/TiO{sub 2}/SiO{sub 2}/Al{sub 2}O{sub 3} substrates by rf sputtering. By inserting a thin layer of SrRuO{sub 3} in between BST film and (111)Pt electrode, the BST films grew fully (111)-oriented without any other orientations. In addition, it enables us to reduce the growth temperature of BST films while keeping the dielectric constant and tunability as high as those of BST films directly deposited on Pt at higher temperatures. The dielectric loss of the films on SrRuO{sub 3}-top substrates was comparable to that on Pt-top substrates for the same level of dielectricmore » constant. The results suggest that the SrRuO{sub 3} thin layer on (111)Pt electrode is an effective approach to growing highly crystalline BST films with (111) orientation at lower deposition temperatures.« less

Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

NASA Astrophysics Data System (ADS)

Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

1988-11-01

It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

NASA Astrophysics Data System (ADS)

Cristea, D.; Crisan, A.; Cretu, N.; Borges, J.; Lopes, C.; Cunha, L.; Ion, V.; Dinescu, M.; Barradas, N. P.; Alves, E.; Apreutesei, M.; Munteanu, D.

2015-11-01

The main purpose of this work is to present and to interpret the change of electrical properties of TaxNyOz thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N2 and O2, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, -50 V or -100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance TaxNyOz films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric TaxNyOz films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

NASA Astrophysics Data System (ADS)

Roeckerath, M.; Lopes, J. M. J.; Özben, E. Durǧun; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D. G.

2010-01-01

Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of <1 nA/cm2. Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm2/V•s was extracted.

Microstructure and dielectric properties of pyrochlore Bi2Ti2O7 thin films

NASA Astrophysics Data System (ADS)

Cagnon, Joël; Boesch, Damien S.; Finstrom, Nicholas H.; Nergiz, Saide Z.; Keane, Sean P.; Stemmer, Susanne

2007-08-01

Bi2Ti2O7 thin films were grown by radio-frequency magnetron sputtering on bare and Pt-coated sapphire substrates at low substrate temperatures (˜200 °C). Postdeposition anneals were carried out at different temperatures to crystallize the films. Nearly phase-pure Bi2Ti2O7 thin films with the cubic pyrochlore structure were obtained at annealing temperatures up to 800 °C. Impurity phases, in particular Bi4Ti3O12, formed at higher temperatures. At 1 MHz, the dielectric constants were about 140-150 with a very small tunability and the dielectric loss was about 4×10-3. The dielectric loss increased with frequency. The dielectric properties of Bi2Ti2O7 films are compared to those of pyrochlore bismuth zinc niobate films.

Single-mode plasmonic waveguiding properties of metal nanowires with dielectric substrates.

PubMed

Wang, Yipei; Ma, Yaoguang; Guo, Xin; Tong, Limin

2012-08-13

Single-mode plasmonic waveguiding properties of metal nanowires with dielectric substrates are investigated using a finite-element method. Au and Ag are selected as plasmonic materials for nanowire waveguides with diameters down to 5-nm-level. Typical dielectric materials with relatively low to high refractive indices, including magnesium fluoride (MgF2), silica (SiO2), indium tin oxide (ITO) and titanium dioxide (TiO2), are used as supporting substrates. Basic waveguiding properties, including propagation constants, power distributions, effective mode areas, propagation distances and losses are obtained at the typical plasmonic resonance wavelength of 660 nm. Compared to that of a freestanding nanowire, the mode area of a substrate-supported nanowire could be much smaller while maintaining an acceptable propagation length. For example, the mode area and propagation length of a 100-nm-diameter Ag nanowire with a MgF2 substrate are about 0.004 μm2 and 3.4 μm, respectively. The dependences of waveguiding properties on geometric and material parameters of the nanowire-substrate system are also provided. Our results may provide valuable references for waveguiding dielectric-supported metal nanowires for practical applications.

Material optimization of multi-layered enhanced nanostructures

NASA Astrophysics Data System (ADS)

Strobbia, Pietro

The employment of surface enhanced Raman scattering (SERS)-based sensing in real-world scenarios will offer numerous advantages over current optical sensors. Examples of these advantages are the intrinsic and simultaneous detection of multiple analytes, among many others. To achieve such a goal, SERS substrates with throughput and reproducibility comparable to commonly used fluorescence sensors have to be developed. To this end, our lab has discovered a multi-layer geometry, based on alternating films of a metal and a dielectric, that amplifies the SERS signal (multi-layer enhancement). The advantage of these multi-layered structures is to amplify the SERS signal exploiting layer-to-layer interactions in the volume of the structures, rather than on its surface. This strategy permits an amplification of the signal without modifying the surface characteristics of a substrate, and therefore conserving its reproducibility. Multi-layered structures can therefore be used to amplify the sensitivity and throughput of potentially any previously developed SERS sensor. In this thesis, these multi-layered structures were optimized and applied to different SERS substrates. The role of the dielectric spacer layer in the multi-layer enhancement was elucidated by fabricating spacers with different characteristics and studying their effect on the overall enhancement. Thickness, surface coverage and physical properties of the spacer were studied. Additionally, the multi-layered structures were applied to commercial SERS substrates and to isolated SERS probes. Studies on the dependence of the multi-layer enhancement on the thickness of the spacer demonstrated that the enhancement increases as a function of surface coverage at sub-monolayer thicknesses, due to the increasing multi-layer nature of the substrates. For fully coalescent spacers the enhancement decreases as a function of thickness, due to the loss of interaction between proximal metallic films. The influence of the physical properties of the spacer on the multi-layer enhancement were also studied. The trends in Schottky barrier height, interfacial potential and dielectric constant were isolated by using different materials as spacers (i.e., TiO2, HfO2, Ag 2O and Al2O3). The results show that the bulk dielectric constant of the material can be used to predict the relative magnitude of the multi-layer enhancement, with low dielectric constant materials performing more efficiently as spacers. Optimal spacer layers were found to be ultrathin coalescent films (ideally a monolayer) of low dielectric constant materials. Finally, multi-layered structures were observed to be employable to amplify SERS in drastically different substrate geometries. The multi-layered structures were applied to disposable commercial SERS substrates (i.e., Klarite). This project involved the regeneration of the used substrates, by stripping and redepositing the gold coating layer, and their amplification, by using the multi-layer geometry. The latter was observed to amplify the sensitivity of the substrates. Additionally, the multi-layered structures were applied to probes dispersed in solution. Such probes were observed to yield stronger SERS signal when optically trapped and to reduce the background signal. The application of the multi-layered structures on trapped probes, not only further amplified the SERS signal, but also increased the maximum number of applicable layers for the structures.

Method for making surfactant-templated, high-porosity thin films

DOEpatents

Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hongyou

2001-01-01

An evaporation-induced self-assembly method to prepare a surfactant-templated thin film by mixing a silica sol, a surfactant, and a hydrophobic polymer and then evaporating a portion of the solvent during coating onto a substrate and then heating to form a liquid-phase, thin film material with a porosity greater than approximately 50 percent. The high porosity thin films can have dielectric constants less than 2 to be suitable for applications requiring low-dielectric constants. An interstitial compound can be added to the mixture, with the interstitial compound either covalently bonded to the pores or physically entrapped within the porous structure. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Complex oxide thin films for microelectronics

NASA Astrophysics Data System (ADS)

Suvorova, Natalya

The rapid scaling of the device dimensions, namely in metal oxide semiconductor field effect transistor (MOSFET), is reaching its fundamental limit which includes the increase in allowable leakage current due to direct tunneling with decrease of physical thickness of SiO2 gate dielectric. The significantly higher relative dielectric constant (in the range 9--25) of the gate dielectric beyond the 3.9 value of silicon dioxide will allow increasing the physical thickness. Among the choices for the high dielectric constant (K) materials for future generation MOSFET application, barium strontium titanate (BST) and strontium titanate (STO) possess one of the highest attainable K values making them the promising candidates for alternative gate oxide. However, the gate stack engineering does not imply the simple replacement of the SiO2 with the new dielectric. Several requirements should be met for successful integration of a new material. The major one is a production of high level of interface states (Dit) compared to that of SiO 2 on Si. An insertion of a thin SiO2 layer prior the growth of high-K thin film is a simple solution that helps to limit reaction with Si substrate and attains a high quality interface. However, the combination of two thin films reduces the overall K of the dielectric stack. An optimization of the SiO2 underlayer in order to maintain the interface quality yet minimize the effect on K is the focus of this work. The results from our study are presented with emphasis on the key process parameters that improve the dielectric film stack. For in-situ growth characterization of BST and STO films sputter deposited on thermally oxidized Si substrates spectroscopic ellipsometry in combination with time of flight ion scattering and recoil spectrometry have been employed. Studies of material properties have been complemented with analytical electron microscopy. To evaluate the interface quality the electrical characterization has been employed using capacitance-voltage and conductance-voltage measurements. Special attention was given to the extraction of static dielectric constant of BST and STO from the multiple film stack. The K value was found to be sensitive to the input parameters such as dielectric constant and thickness of interface layers.

Can zinc aluminate-titania composite be an alternative for alumina as microelectronic substrate?

PubMed Central

Roshni, Satheesh Babu; Sebastian, Mailadil Thomas; Surendran, Kuzhichalil Peethambharan

2017-01-01

Alumina, thanks to its superior thermal and dielectric properties, has been the leading substrate over several decades, for power and microelectronics circuits. However, alumina lacks thermal stability since its temperature coefficient of resonant frequency (τf) is far from zero (−60 ppmK−1). The present paper explores the potentiality of a ceramic composite 0.83ZnAl2O4-0.17TiO2 (in moles, abbreviated as ZAT) substrates for electronic applications over other commercially-used alumina-based substrates and synthesized using a non-aqueous tape casting method. The present substrate has τf of + 3.9 ppmK−1 and is a valuable addition to the group of thermo-stable substrates. The ZAT substrate shows a high thermal conductivity of 31.3 Wm−1K−1 (thermal conductivity of alumina is about 24.5 Wm−1K−1), along with promising mechanical, electrical and microwave dielectric properties comparable to that of alumina-based commercial substrates. Furthermore, the newly-developed substrate material shows exceptionally good thermal stability of dielectric constant, which cannot be met with any of the alumina-based HTCC substrates. PMID:28084459

Microwave characterization of slotline on high resistivity silicon for antenna feed network

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Taub, Susan R.; Lee, Richard Q.; Young, Paul G.

1993-01-01

Conventional silicon wafers have low resistivity and consequently unacceptably high value of dielectric attenuation constant. Microwave circuits for phased array antenna systems fabricated on these wafers therefore have low efficiency. By choosing a silicon substrate with sufficiently high resistivity it is possible to make the dielectric attenuation constant of the interconnecting microwave transmission lines approach those of GaAs or InP. In order for this to be possible, the transmission lines must be characterized. In this presentation, the effective dielectric constant (epsilon sub eff) and attenuation constant (alpha) of a slotline on high resistivity (5000 to 10 000 ohm-cm) silicon wafer will be discussed. The epsilon sub eff and alpha are determined from the measured resonant frequencies and the corresponding insertion loss of a slotline ring resonator. The results for slotline will be compared with microstrip line and coplanar waveguide.

Dielectric Performance of a High Purity HTCC Alumina at High Temperatures - a Comparison Study with Other Polycrystalline Alumina

NASA Technical Reports Server (NTRS)

Chen, Liangyu

2014-01-01

A very high purity (99.99+%) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this alumina material for co-firing processing. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96% polycrystalline alumina (96% Al2O3), where 96% alumina was used as the benchmark. A prototype packaging system based on regular 96% alumina with Au thickfilm metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500 C. In order to evaluate this new high purity HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96% alumina and a previously tested LTCC alumina from room temperature to 550 C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96% alumina and a selected LTCC alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

Investigation on the growth of CaCu 3Ti 4O 12 thin film and the origins of its dielectric relaxations

NASA Astrophysics Data System (ADS)

Yuan, Wen-Xiang; Hark, S. K.; Xu, H. Y.; Mei, W. N.

2012-01-01

Using the radio frequency magnetron sputtering, CaCu 3Ti 4O 12 (CCTO) thin films were deposited on platinized silicon substrates. The influence of annealing temperature on structures and morphologies of the thin films was investigated. The high annealing temperature increased the crystallinity of the films. Temperature dependence of the dielectric constant revealed an amazing different characteristic of the dielectric relaxation at ˜10 MHz, whose characteristic frequency abnormally increased with the decrease of the measuring temperature unlike the relaxations due to extrinsic origins. Meanwhile, the dielectric constant at high frequencies was close to the value derived from the first principle calculation. All these gave the evidences to ascribe this relaxation to the intrinsic mechanism.

Dielectric Properties of BST/(Y 2O 3) x(ZrO 2) 1-x/BST Trilayer Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahoo, Santosh K.; Misra, D.

2011-01-31

Thin films of Ba1-xSrxTiO3 (BST) are being actively investigated for applications in dynamic random access memories (DRAM) because of their properties such as high dielectric constant, low leakage current, and high dielectric breakdown strength. Various approaches have been used to improve the dielectric properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in dielectric constant as well as dielectric loss. In this work the effect of Y2O3 doped ZrO2 on the dielectric properties of BST/ZrO2/BST trilayer structure ismore » studied. The structure Ba0.8Sr0.2TiO3/(Y2O3)x(ZrO2)1-x/Ba0.8Sr0.2TiO3 is deposited by a sol-gel process on platinized Si substrate. The composition (x) of the middle layer is varied while keeping the total thickness of the trilayer film constant. The dielectric constant of the multilayer film decreases with the increase of Y2O3 amount in the film whereas there is a slight variation in dielectric loss. In Y2O3 doped multilayer thin films, the dielectric loss is lower in comparison to other films and also there is good frequency stability in the loss in the measured frequency range and hence very suitable for microwave device applications.« less

An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials.

PubMed

Yang, Hang; Qin, Shiqiao; Zheng, Xiaoming; Wang, Guang; Tan, Yuan; Peng, Gang; Zhang, Xueao

2017-09-22

We fabricated 70 nm Al₂O₃ gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al₂O₃/Si substrate is superior to that on a traditional 300 nm SiO₂/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al₂O₃/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS₂, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices.

Optical, dielectric and morphological studies of sol-gel derived nanocrystalline TiO2 films.

PubMed

Vishwas, M; Sharma, Sudhir Kumar; Narasimha Rao, K; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

2009-10-15

Nanocrystalline TiO(2) films have been synthesized on glass and silicon substrates by sol-gel technique. The films have been characterized with optical reflectance/transmittance in the wavelength range 300-1000 nm and the optical constants (n, k) were estimated by using envelope technique as well as spectroscopic ellipsometry. Morphological studies have been carried out using atomic force microscope (AFM). Metal-Oxide-Silicon (MOS) capacitor was fabricated using conducting coating on TiO(2) film deposited on silicon. The C-V measurements show that the film annealed at 300 degrees C has a dielectric constant of 19.80. The high percentage of transmittance, low surface roughness and high dielectric constant suggests that it can be used as an efficient anti-reflection coating on silicon and other optical coating applications and also as a MOS capacitor.

YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates

NASA Technical Reports Server (NTRS)

Sabataitis, J. C.; Mueller, C. H.; Miranda, F. A.; Warner, J.; Bhasin, K. B.

1996-01-01

Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.

Terahertz dielectric response of ferroelectric Ba(x)Sr(1-x)TiO3 thin films.

PubMed

Kang, Seung Beom; Kwak, Min Hwan; Choi, Muhan; Kim, Sungil; Kim, Taeyong; Cha, Eun Jong; Kang, Kwang Yong

2011-11-01

Terahertz time-domain spectroscopy has been used to investigate the dielectric and optical properties of ferroelectric Ba(x)Sr(1-x)TiO(3) thin films for nominal x-values of 0.4, 0.6, and 0.8 in the frequency range of 0.3 to 2.5 THz. The ferroelectric thin films were deposited at approximately 700 nm thickness on [001] MgO substrate by pulsed laser deposition. The measured complex dielectric and optical constants were compared with the Cole-Cole relaxation model. The results show that the Cole-Cole relaxation model fits well with the data throughout the frequency range and the dielectric relaxation behavior of ferroelectric Ba(x)Sr(1-x)TiO(3) thin films varies with the films compositions. Among the compositions of Ba(x)Sr(1-x)TiO(3) films with different Ba/Sr ratios, Ba(0.6)Sr(0.4)TiO(3) has the highest dielectric constants and the shortest dielectric relaxation time.

Inkjet printed graphene-based field-effect transistors on flexible substrate

NASA Astrophysics Data System (ADS)

Monne, Mahmuda Akter; Enuka, Evarestus; Wang, Zhuo; Chen, Maggie Yihong

2017-08-01

This paper presents the design and fabrication of inkjet printed graphene field-effect transistors (GFETs). The inkjet printed GFET is fabricated on a DuPont Kapton FPC Polyimide film with a thickness of 5 mill and dielectric constant of 3.9 by using a Fujifilm Dimatix DMP-2831 materials deposition system. A layer by layer 3D printing technique is deployed with an initial printing of source and drain by silver nanoparticle ink. Then graphene active layer doped with molybdenum disulfide (MoS2) monolayer/multilayer dispersion, is printed onto the surface of substrate covering the source and drain electrodes. High capacitance ion gel is adopted as the dielectric material due to the high dielectric constant. Then the dielectric layer is then covered with silver nanoparticle gate electrode. Characterization of GFET has been done at room temperature (25°C) using HP-4145B semiconductor parameter analyzer (Hewlett-Packard). The characterization result shows for a voltage sweep from -2 volts to 2 volts, the drain current changes from 949 nA to 32.3 μA and the GFET achieved an on/off ratio of 38:1, which is a milestone for inkjet printed flexible graphene transistor.

Theoretical and Numerical Approaches for Determining the Reflection and Transmission Coefficients of OPEFB-PCL Composites at X-Band Frequencies

PubMed Central

Ahmad, Ahmad F.; Abbas, Zulkifly; Obaiys, Suzan J.; Ibrahim, Norazowa; Hashim, Mansor; Khaleel, Haider

2015-01-01

Bio-composites of oil palm empty fruit bunch (OPEFB) fibres and polycaprolactones (PCL) with a thickness of 1 mm were prepared and characterized. The composites produced from these materials are low in density, inexpensive, environmentally friendly, and possess good dielectric characteristics. The magnitudes of the reflection and transmission coefficients of OPEFB fibre-reinforced PCL composites with different percentages of filler were measured using a rectangular waveguide in conjunction with a microwave vector network analyzer (VNA) in the X-band frequency range. In contrast to the effective medium theory, which states that polymer-based composites with a high dielectric constant can be obtained by doping a filler with a high dielectric constant into a host material with a low dielectric constant, this paper demonstrates that the use of a low filler percentage (12.2%OPEFB) and a high matrix percentage (87.8%PCL) provides excellent results for the dielectric constant and loss factor, whereas 63.8% filler material with 36.2% host material results in lower values for both the dielectric constant and loss factor. The open-ended probe technique (OEC), connected with the Agilent vector network analyzer (VNA), is used to determine the dielectric properties of the materials under investigation. The comparative approach indicates that the mean relative error of FEM is smaller than that of NRW in terms of the corresponding S21 magnitude. The present calculation of the matrix/filler percentages endorses the exact amounts of substrate utilized in various physics applications. PMID:26474301

Recent advances in characterization of CaCu3Ti4O12 thin films by spectroscopic ellipsometric metrology.

PubMed

Lo Nigro, Raffaella; Malandrino, Graziella; Toro, Roberta G; Losurdo, Maria; Bruno, Giovanni; Fragalà, Ignazio L

2005-10-12

CaCu3Ti4O12 (CCTO) thin films were successfully grown on LaAlO3(100) and Pt/TiO2/SiO2/Si(100) substrates by a novel MOCVD approach. Epitaxial CCTO(001) thin films have been obtained on LaAlO3(100) substrates, while polycrystalline CCTO films have been grown on Pt/TiO2/SiO2/Si(100) substrates. Surface morphology and grain size of the different nanostructured deposited films were examined by AFM, and spectroscopic ellipsometry has been used to investigate the electronic part of the dielectric constant (epsilon2). Looking at the epsilon2 curves, it can be seen that by increasing the film structural order, a greater dielectric response has been obtained. The measured dielectric properties accounted for the ratio between grain volumes and grain boundary areas, which is very different in the different structured films.

Substrate Screening Effects in ab initio Many-body Green's Function Calculations of Doped Graphene on SiC

NASA Astrophysics Data System (ADS)

Vigil-Fowler, Derek; Lischner, Johannes; Louie, Steven

2013-03-01

Understanding many-electron interaction effects and the influence of the substrate in graphene-on-substrate systems is of great theoretical and practical interest. Thus far, both model Hamiltonian and ab initio GW calculations for the quasiparticle properties of such systems have employed crude models for the effect of the substrate, often approximating the complicated substrate dielectric matrix by a single constant. We develop a method in which the spatially-dependent dielectric matrix of the substrate (e.g., SiC) is incorporated into that of doped graphene to obtain an accurate total dielectric matrix. We present ab initio GW + cumulant expansion calculations, showing that both the cumulant expansion (to include higher-order electron correlations) and a proper account of the substrate screening are needed to achieve agreement with features seen in ARPES. We discuss how this methodology could be used in other systems. This work was supported by NSF Grant No. DMR10-1006184 and U.S. DOE Contract No. DE-AC02-05CH11231. Computational resources have been provided by the NERSC and NICS. D.V-F. acknowledges funding from the DOD's NDSEG fellowship.

The Effect of Dielectric Constants on Noble Metal/Semiconductor SERS Enhancement: FDTD Simulation and Experiment Validation of Ag/Ge and Ag/Si Substrates

PubMed Central

Wang, Tao; Zhang, Zhaoshun; Liao, Fan; Cai, Qian; Li, Yanqing; Lee, Shuit-Tong; Shao, Mingwang

2014-01-01

The finite-difference time-domain (FDTD) method was employed to simulate the electric field distribution for noble metal (Au or Ag)/semiconductor (Ge or Si) substrates. The simulation showed that noble metal/Ge had stronger SERS enhancement than noble metal/Si, which was mainly attributed to the different dielectric constants of semiconductors. In order to verify the simulation, Ag nanoparticles with the diameter of ca. 40 nm were grown on Ge or Si wafer (Ag/Ge or Ag/Si) and employed as surface-enhanced Raman scattering substrates to detect analytes in solution. The experiment demonstrated that both the two substrates exhibited excellent performance in the low concentration detection of Rhodamine 6G. Besides, the enhancement factor (1.3 × 109) and relative standard deviation values (less than 11%) of Ag/Ge substrate were both better than those of Ag/Si (2.9 × 107 and less than 15%, respectively), which was consistent with the FDTD simulation. Moreover, Ag nanoparticles were grown in-situ on Ge substrate, which kept the nanoparticles from aggregation in the detection. To data, Ag/Ge substrates showed the best performance for their sensitivity and uniformity among the noble metal/semiconductor ones. PMID:24514430

The effect of dielectric constants on noble metal/semiconductor SERS enhancement: FDTD simulation and experiment validation of Ag/Ge and Ag/Si substrates.

PubMed

Wang, Tao; Zhang, Zhaoshun; Liao, Fan; Cai, Qian; Li, Yanqing; Lee, Shuit-Tong; Shao, Mingwang

2014-02-11

The finite-difference time-domain (FDTD) method was employed to simulate the electric field distribution for noble metal (Au or Ag)/semiconductor (Ge or Si) substrates. The simulation showed that noble metal/Ge had stronger SERS enhancement than noble metal/Si, which was mainly attributed to the different dielectric constants of semiconductors. In order to verify the simulation, Ag nanoparticles with the diameter of ca. 40 nm were grown on Ge or Si wafer (Ag/Ge or Ag/Si) and employed as surface-enhanced Raman scattering substrates to detect analytes in solution. The experiment demonstrated that both the two substrates exhibited excellent performance in the low concentration detection of Rhodamine 6G. Besides, the enhancement factor (1.3 × 10(9)) and relative standard deviation values (less than 11%) of Ag/Ge substrate were both better than those of Ag/Si (2.9 × 10(7) and less than 15%, respectively), which was consistent with the FDTD simulation. Moreover, Ag nanoparticles were grown in-situ on Ge substrate, which kept the nanoparticles from aggregation in the detection. To data, Ag/Ge substrates showed the best performance for their sensitivity and uniformity among the noble metal/semiconductor ones.

An Al2O3 Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials

PubMed Central

Zheng, Xiaoming; Wang, Guang; Tan, Yuan; Zhang, Xueao

2017-01-01

We fabricated 70 nm Al2O3 gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al2O3/Si substrate is superior to that on a traditional 300 nm SiO2/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al2O3/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS2, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices. PMID:28937619

Comparative Study of HfTa-based gate-dielectric Ge metal-oxide-semiconductor capacitors with and without AlON interlayer

NASA Astrophysics Data System (ADS)

Xu, J. P.; Zhang, X. F.; Li, C. X.; Chan, C. L.; Lai, P. T.

2010-04-01

The electrical properties and high-field reliability of HfTa-based gate-dielectric metal-oxide-semiconductor (MOS) devices with and without AlON interlayer on Ge substrate are investigated. Experimental results show that the MOS capacitor with HfTaON/AlON stack gate dielectric exhibits low interface-state/oxide-charge densities, low gate leakage, small capacitance equivalent thickness (˜1.1 nm), and high dielectric constant (˜20). All of these should be attributed to the blocking role of the ultrathin AlON interlayer against interdiffusions of Ge, Hf, and Ta and penetration of O into the Ge substrate, with the latter effectively suppressing the unintentional formation of unstable poor-quality low- k GeO x and giving a superior AlON/Ge interface. Moreover, incorporation of N into both the interlayer and high- k dielectric further improves the device reliability under high-field stress through the formation of strong N-related bonds.

Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

PubMed

Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

2010-09-24

A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

Highly reliable spin-coated titanium dioxide dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mondal, Sandip, E-mail: sandipmondal@physics.iisc.ernet.in; Kumar, Arvind; Rao, K. S. R. Koteswara

Dielectric degradation as low as 0.3 % has been observed for a highly reliable Titanium dioxide (TiO{sub 2}) film after constant voltage stressing (CVS) with – 4 V for 10{sup 5} second at room temperature (300 K). The film was fabricated by sol –gel spin – coating method on a lightly doped p-Si (~10{sup 15} cm{sup −3}) substrate. The equivalent oxide thickness (EOT) is 7 nm with a dielectric constant 33 (at 1 MHz). Metal – Oxide – Semiconductor (MOS) capacitors have been fabricated with an optimum annealing temperature of 800°C for one hour in a preheated furnace. The dielectricmore » degradation is annealing temperature dependent. A degradation of 1.4 %, 1.2 % and 1.1 % has been observed for 400°C, 600°C and 1000°C temperature annealed MOS respectively. The dielectric degradation increases below or above the optimum temperature of annealing.« less

Grain size dependence of dielectric relaxation in cerium oxide as high-k layer

PubMed Central

2013-01-01

Cerium oxide (CeO2) thin films used liquid injection atomic layer deposition (ALD) for deposition and ALD procedures were run at substrate temperatures of 150°C, 200°C, 250°C, 300°C, and 350°C, respectively. CeO2 were grown on n-Si(100) wafers. Variations in the grain sizes of the samples are governed by the deposition temperature and have been estimated using Scherrer analysis of the X-ray diffraction patterns. The changing grain size correlates with the changes seen in the Raman spectrum. Strong frequency dispersion is found in the capacitance-voltage measurement. Normalized dielectric constant measurement is quantitatively utilized to characterize the dielectric constant variation. The relationship extracted between grain size and dielectric relaxation for CeO2 suggests that tuning properties for improved frequency dispersion can be achieved by controlling the grain size, hence the strain at the nanoscale dimensions. PMID:23587419

Free-Space Time-Domain Method for Measuring Thin Film Dielectric Properties

DOEpatents

Li, Ming; Zhang, Xi-Cheng; Cho, Gyu Cheon

2000-05-02

A non-contact method for determining the index of refraction or dielectric constant of a thin film on a substrate at a desired frequency in the GHz to THz range having a corresponding wavelength larger than the thickness of the thin film (which may be only a few microns). The method comprises impinging the desired-frequency beam in free space upon the thin film on the substrate and measuring the measured phase change and the measured field reflectance from the reflected beam for a plurality of incident angles over a range of angles that includes the Brewster's angle for the thin film. The index of refraction for the thin film is determined by applying Fresnel equations to iteratively calculate a calculated phase change and a calculated field reflectance at each of the plurality of incident angles, and selecting the index of refraction that provides the best mathematical curve fit with both the dataset of measured phase changes and the dataset of measured field reflectances for each incident angle. The dielectric constant for the thin film can be calculated as the index of refraction squared.

Dielectric properties of Ba0.6Sr0.4TiO3 thin films deposited by mist plasma evaporation using aqueous solution precursor

NASA Astrophysics Data System (ADS)

Huang, Hui; Shi, Peng; Wang, Minqiang; Yao, Xi; Tan, O. K.

2006-06-01

Mist plasma evaporation (MPE) technique has been developed to deposit Ba0.6Sr0.4TiO3 (BST) thin films on SiO2/Si and Pt/Ti/SiO2/Si substrates at atmospheric pressure using metal nitrate aqueous solution as precursor. MPE is characterized by the injection of liquid reactants into thermal plasma where the source materials in the droplets are evaporated by the high temperature of the thermal plasma. Nanometer-scale clusters are formed in the tail flame of the plasma, and then deposited and rearranged on the substrate at a lower temperature. Due to the high temperature annealing process of the thermal plasma before deposition, well-crystallized BST films were deposited at substrate temperature of 630 °C. The dielectric constant and dielectric loss of the film at 100 kHz are 715 and 0.24, respectively. Due to the good crystallinity of the BST films deposited by MPE, high dielectric tunability up to 39.3% is achieved at low applied electric field of 100 kV cm-1.

Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

DOEpatents

Auciello, Orlando

2010-05-11

A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

The Thomas-Fermi model in the theory of systems of charged particles above the surface of liquid dielectrics

NASA Astrophysics Data System (ADS)

Lytvtnenko, D. M.; Slyusarenko, Yu. V.; Kirdin, A. I.

2012-10-01

A consistent theory of equilibrium states of same sign charges above the surface of liquid dielectric film located on solid substrate in the presence of external attracting constant electric field is proposed. The approach to the development of the theory is based on the Thomas-Fermi model generalized to the systems under consideration and on the variational principle. The using of self-consistent field model allows formulating a theory containing no adjustable constants. In the framework of the variational principle we obtain the self-consistency equations for the parameters describing the system: the distribution function of charges above the liquid dielectric surface, the electrostatic field potentials in all regions of the system and the surface profile of the liquid dielectric. The self-consistency equations are used to describe the phase transition associated with the formation of spatially periodic structures in the system of charges on liquid dielectric surface. Assuming the non-degeneracy of the gas of charges above the surface of liquid dielectric film the solutions of the self-consistency equations near the critical point are obtained. In the case of the symmetric phase we obtain the expressions for the potentials and electric fields in all regions of the studied system. The distribution of the charges above the surface of liquid dielectric film for the symmetric phase is derived. The system parameters of the phase transition to nonsymmetric phase - the states with a spatially periodic ordering are obtained. We derive the expression determining the period of two-dimensional lattice as a function of physical parameters of the problem - the temperature, the external attractive electric field, the number of electrons per unit of the flat surface area of the liquid dielectric, the density of the dielectric, its surface tension and permittivity, and the permittivity of the solid substrate. The possibility of generalizing the developed theory in the case of degenerate gas of like-charged particles above the liquid dielectric surface is discussed.

Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

NASA Astrophysics Data System (ADS)

Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

2009-05-01

Highly c-axis oriented LiNbO3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO3 films under the optimized deposition condition. An extra peak at 905 cm-1 was observed in the Raman spectra of LiNbO3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO3 film and the Al : ZnO layer.

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

PubMed

Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

2018-04-18

A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

Dielectric response of crystalline tris(acetylacetonato)cobalt(III) films grown on Si substrate for low- k dielectric applications

NASA Astrophysics Data System (ADS)

Dakhel, A. A.; Ali-Mohamed, A. Y.

2008-01-01

Thin films of the complex tris(acetylacetonato)cobalt(III) [abb. Co(acac) 3] were deposited in vacuum on glass and p-Si substrates for optical and dielectric studies. The samples were characterised by X-ray diffraction and fluorescence methods as well as optical absorption spectroscopy. The prepared films show a polycrystalline of monoclinic P2 1/ c structure. The optical absorption spectrum of the prepared film was not exactly fit to that of the molecular one. The energy of the optical absorption onset of the Co(acac) 3 film was calculated by using usual solid-state methods. For electrical measurements on the complex as insulator, samples in the form of metal-insulator-semiconductor (MIS) structure were prepared and characterised by measurement of the capacitance as a function of gate voltage at 1 MHz. The frequency dependence of the complex dielectric constant of the complex was studied in the frequency range (1-1000 kHz) in the temperature range (294-323 K). The experimental results were analysed in the framework of Debye single relaxation model. Generally, the present study shows that a film of complex Co(acac) 3 grown on Si substrate is a promising candidate for low- k dielectric applications, it displays low- k value around 1.7 at high frequencies.

Multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 layers for tunable applications

PubMed Central

Yu, Shihui; Li, Lingxia; Zhang, Weifeng; Sun, Zheng; Dong, Helei

2015-01-01

The dielectric properties and tunability of multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 (PZT/BZN) layers (PPBLs) fabricated by pulsed laser deposition on Pt/TiO2/SiO2/Si substrate have been investigated. Dielectric measurements indicate that the PZT/BZN bilayer thin films exhibit medium dielectric constant of about 490, low loss tangent of 0.017, and superior tunable dielectric properties (tunability = 49.7% at 500 kV/cm) at a PZT/BZN thickness ratio of 3, while the largest figure of merit is obtained as 51.8. The thickness effect is discussed with a series connection model of bilayer capacitors, and the calculated dielectric constant and loss tangent are obtained. Furthermore, five kinds of thin–film samples comprising single bilayers, two, three, four and five PPBLs were also elaborated with the final same thickness. The four PPBLs show the largest dielectric constant of ~538 and tunability of 53.3% at a maximum applied bias field of 500 kV/cm and the lowest loss tangent of ~0.015, while the largest figure of merit is 65.6. The results indicate that four PPBLs are excellent candidates for applications of tunable devices. PMID:25960043

Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on Insulator-on-Silicon substrates with high-k gate-dielectrics

NASA Astrophysics Data System (ADS)

Chatterjee, Sulagna; Chattopadhyay, Sanatan

2016-10-01

An analytical model including the simultaneous impact of lattice and thermo-elastic constant mismatch-induced stress in nanowires on Insulator-on-Silicon substrate is developed. It is used to calibrate the finite-element based software, ANSYS, which is subsequently employed to estimate process-induced stress in the sequential steps of NW-FET fabrication. The model considers crystal structures and orientations for both the nanowires and substrates. In-plane stress components along nanowire-axis are estimated for different radii and fractions of insertion. Nature of longitudinal stress is observed to change when inserted fraction of nanowires is changed. Effect of various high-k gate-dielectrics is also investigated. A longitudinal tensile stress of 2.4 GPa and compressive stress of 1.89 GPa have been obtained for NW-FETs with 1/4th and 3/4th insertions with La2O3 and TiO2 as the gate-dielectrics, respectively. Therefore, it is possible to achieve comparable values of electron and hole mobility in NW-FETs by judiciously choosing gate-dielectrics and fractional insertion of the nanowires.

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

PubMed Central

Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y. B.; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

2016-01-01

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications. PMID:27703253

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

NASA Astrophysics Data System (ADS)

Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y. B.; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

2016-10-01

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates.

PubMed

Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y B; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

2016-10-05

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO 3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu 3 Ti 4 O 12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.

Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt /Ti/SiO2/Si substrates

NASA Astrophysics Data System (ADS)

Zhai, Jiwei; Yao, Xi; Xu, Zhengkui; Chen, Haydn

2006-08-01

Thin films of ferroelectric PbxSr1-xTiO3 (PST) with x =0.3-0.7 and graded composition were fabricated on LaNiO3 buffered Pt /Ti/SiO2/Si substrates by a sol-gel deposition method. The thin films crystallized into a single perovskite structure and exhibited highly (100) preferred orientation after postdeposition annealing at 650°C. The grain size of PST thin films systematically decreased with the increase of Sr content. Dielectric and ferroelectric properties were investigated as a function of temperature, frequency, and dc applied field. Pb0.6Sr0.4TiO3 films showed a dominant voltage dependence of dielectric constant with a high tunability in a temperature range of 25-230°C. The compositionally graded PST thin films with x =0.3-0.6 also showed the high tunability. The graded thin films exhibited a diffused phase transition accompanied by a diffused peak in the temperature variations of dielectric constants. This kind of thin films has a potential in a fabrication of a temperature stable tunable device.

High Performance Composite Dielectric Ink for Ultracapacitors

NASA Technical Reports Server (NTRS)

Rolin, Terry D. (Inventor); Hill, Curtis W. (Inventor)

2017-01-01

The present invention is a dielectric ink and means for printing using said ink. Approximately 10-20% of the ink is a custom organic vehicle made of a polar solvent and a binder. Approximately 30-70% of the ink is a dielectric powder having an average particle diameter of approximately 10-750 nm. Approximately 5-15% of the ink is a dielectric constant glass. Approximately 10-35% of the ink is an additional amount of solvent. The ink is deposited on a printing substrate to form at least one printed product, which is then dried and cured to remove the solvent and binder, respectively. The printed product then undergoes sintering in an inert gas atmosphere.

Nanostructure and strain effects in active thin films for novel electronic device applications

NASA Astrophysics Data System (ADS)

Yuan, Zheng

2007-12-01

There are many potential applications of ferroelectric thin films that take advantage of their unique dielectric and piezoelectric properties, such as tunable microwave devices and thin-film active sensors for structural health monitoring (SHM). However, many technical issues still restrict practical applications of ferroelectric thin films, including high insertion loss, limited figure of merit, soft mode effect, large temperature coefficients, and others. The main theme of this thesis is the advanced technique developments, and the new ferroelectric thin films syntheses and investigations for novel device applications. A novel method of additional doping has been adopted to (Ba,Sr)TiO 3 (BSTO) thin films on MgO. By introducing 2% Mn into the stoichiometric BSTO, Mn:BSTO thin films have shown a greatly enhanced dielectric tunability and a reduced insertion loss at high frequencies (10-30 GHz). A new record of a large tunability of 80% with a high dielectric constant of 3800 and an extra low dielectric loss of 0.001 at 1 MHz at room-temperature was achieved. Meanwhile, the new highly epitaxial ferroelectric (Pb,Sr)TiO3 (PSTO) thin films have been synthesized on (001) MgO substrates. PSTO films demonstrated excellent high frequency dielectric properties with high dielectric constants above 1420 and large dielectric tunabilities above 34% at room-temperature up to 20 GHz. In addition, a smaller temperature coefficient from 80 K to 300 K was observed in PSTO films compared to BSTO films. These results indicate that the Mn:BSTO and PSTO films are both good candidates for developing room-temperature tunable microwave devices. Furthermore, crystalline ferroelectric BaTiO3 (BTO) thin films have been deposited directly on metal substrate Ni through a unique in-situ substrate pre-oxidation treatment. The highly oriented nanopillar structural BTO films were grown on the buffered layers created by the pre-oxidation treatment. No interdiffusion or reaction was observed at the interface. As-grown BTO films demonstrated good ferroelectric properties and an extremely large piezoelectric response of 130 (x 10-12 C/N). These excellent preliminary results enable the long-term perspective on the unobtrusive ferroelectric thin-film active sensors for SHM applications.

Microwave performance of photoresist-alumina microcomposites for batch fabrication of thick polymer-based dielectric structures

NASA Astrophysics Data System (ADS)

Rashidian, Atabak; Klymyshyn, David M.; Tayfeh Aligodarz, Mohammadreza; Boerner, Martin; Mohr, Jürgen

2012-10-01

The goal of this paper is to investigate the electrical properties of photoresist-alumina microcomposites with different portions of ceramic content. Substrates of photoresist-alumina microcomposites are fabricated and a comprehensive analysis is performed to characterize their dielectric constant and dielectric loss tangent at microwave frequencies up to 40 GHz. To evaluate the performance of these materials for microwave applications, the properties of various lithographically fabricated antenna elements are examined and analysed based on the measured electrical properties. The experimental results show that the electrical properties of the photoresist composite are nonlinearly affected by ceramic content and also a minimum percentage of ceramic portion is required to improve the electrical properties of the photoresist composite. For instance, comparison of 0 wt% with 23 wt% SU8-alumina shows that no reduction is achieved for the dielectric loss tangent. Comparison of 38 wt% with 48 wt% SU8-alumina microcomposite shows that the dielectric loss tangent is improved from 0.03 to 0.01 and the dielectric constant is increased from 3.8 to 5.0 at 25 GHz. These improvements can result in superior performance for the photoresist-based microwave components.

Effects of TiO2 addition on microwave dielectric properties of Li2MgSiO4 ceramics

NASA Astrophysics Data System (ADS)

Rose, Aleena; Masin, B.; Sreemoolanadhan, H.; Ashok, K.; Vijayakumar, T.

2018-03-01

Silicates have been widely studied for substrate applications in microwave integrated circuits owing to their low dielectric constant and low tangent loss values. Li2MgSiO4 (LMS) ceramics are synthesized through solid-state reaction route using TiO2 as an additive to the pure ceramics. Variations in dielectric properties of LMS upon TiO2 addition in different weight percentages (0.5, 1.5, 2) are studied by keeping the sintering parameters constant. Crystalline structure, phase composition, and microstructure of LMS and LMS-TiO2 ceramics were studied using x-ray diffraction spectrometer and High Resolution Scanning electron microscope. Density was measured through Archimedes method and the microwave dielectric properties were examined by Cavity perturbation technique. LMS achieved relative permittivity (ε r) of 5.73 and dielectric loss (tan δ) of 5.897 × 10‑4 at 8 GHz. In LMS-TiO2 ceramics, 0.5 wt% TiO2 added LMS showed comparatively better dielectric properties than other weight percentages where ε r = 5.67, tan δ = 7.737 × 10‑4 at 8 GHz.

Effect of CaRuO3 interlayer on the dielectric properties of Ba(Zr ,Ti)O3 thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Tang, X. G.; Tian, H. Y.; Wang, J.; Wong, K. H.; Chan, H. L. W.

2006-10-01

Ba(Zr0.2Ti0.8)O3 (BZT) thin films on Pt(111)/Ti /SiO2/Si(100) substrates without and with CaRuO3 (CRO) buffer layer were fabricated at 650°C in situ by pulsed laser deposition. The BZT thin films showed a dense morphology, many clusters are found on the surface images of BZT/Pt films, which are composed by nanosized grains of 25-35nm; the average grain size of BZT/CRO films is about 80nm, which lager than that of BZT/Pt thin film. The dielectric constants and dissipation factors of BZT/Pt and BZT/CRO thin films were 392 and 0.019 and 479 and 0.021 at 1MHz, respectively. The dielectric constant of BZT/Pt and BZT/CRO thin films changes significantly with applied dc bias field and has high tunabilities and figures of merit of ˜70% and 37 and 75% and 36, respectively, under an applied field of 400kV /cm. The possible microstructural background responsible for the high dielectric constant and tunability was discussed.

Electrodeposition of titania and barium titanate thin films for high dielectric applications

NASA Astrophysics Data System (ADS)

Roy, Biplab Kumar

In order to address the requirement of a low-temperature low-cost cost processing for depositing high dielectric constant ceramic films for applications in embedded capacitor and flexible electronics technology, two different chemical bath processes, namely, thermohydrolytic deposition (TD) and cathodic electrodeposition (ED) have been exploited to generate titania thin films. In thermohydrolytic deposition technique, titania films were generated from acidic aqueous solution of titanium chloride on F: SnO2 coated glass and Si substrates by temperature assisted hydrolysis mechanism. On the other hand, in cathodic electrodeposition, in-situ electro-generation of hydroxyl ions triggered a fast deposition of titania on conductive substrates such as copper and F: SnO2 coated glass from peroxotitanium solution at low temperatures (˜0°C). In both techniques, solution compositions affected the morphology and crystallinity of the films. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques have been employed to perform such characterization. As both processes utilized water as solvent, the as-deposited films contained hydroxyl ligand or physically adsorbed water molecules in the titania layer. Besides that, electrodeposited films contained peroxotitanium bonds which were characterized by FTIR studies. Although as-electrodeposited titania films were X-ray amorphous, considerable crystallinity could be generated by heat treatment. The films obtained from both the processes showed v moderately high dielectric constant (ranging from 9-30 at 100 kHz) and high breakdown voltage (0.09-0.15 MV/cm) in electrical measurements. To further improve the dielectric constant, electrodeposited titania films were converted to barium titanate films in high pH barium ion containing solution at 80-90°C. The resultant film contained cubic crystalline barium titanate verified by XRD analysis. Simple low-temperature hydrothermal technique of conversion worked perfect for F:SnO2 coated glass substrates, but in this process, high pH precursor caused corrosion in copper substrates and deposition of copper oxide in the final films. To overcome this, an innovative technique, which incorporates an electrochemical protection of substrates by application of cathodic potential in addition to common hydrothermal conversion, has been adopted. Films generated by common hydrothermal technique on F:SnO 2/glass substrates and via electrochemical-hydrothermal technique on Cu substrates showed promising dielectric behavior. Apart from the experimental studies, this report also includes various thermodynamic studies related to hydrolysis and precipitation of titanium ion, protection of copper during titania deposition and barium titanate conversion. Gibbs free energy based model and speciation studies were used to understand supersaturation which is a controlling factor in thermohydrolytic deposition. Similar approaches were utilized to understand the possibilities of barium titanate formation at different Ba2+ concentrations with different pH conditions. Possibilities of atmospheric carbon dioxide incorporation to generate barium carbonate instead of barium titanate formation were also determined by mathematical calculations. Whenever relevant, results of such theoretical analysis were utilized to design the experiment or to explain the experimental observations.

Investigation of Hexagonal Ferrite Film Growth Techniques for Millimeter-Wave Systems Applications.

DTIC Science & Technology

1987-03-15

hexaferrite LPE layer on CoGa 204 substrate. Some areas of the film exhibit a terraced structure .................................... 32 Figure 17 (a) Layer...49 G), which is the standard substrate for yttrium iron garnet epitaxial film growth. The dielectric constant is slightly larger than values for...Details are given ’.- in Appendices III a:d IV. 4.1 INTIODUCTION In LPE , a small lattice mismatch between film and substrate is .r..r ial tc gro.w good

Temperature Dependent Performance of Coplanar Waveguide (CPW) on Substrates of Various Materials

NASA Technical Reports Server (NTRS)

Taub, Susan R.; Young, Paul

1994-01-01

The attenuation (a) and effective dielectric constant (E(sub eff)) of Coplanar Waveguide (CPW) transmission lines on high-resistivity silicon and diamond substrates as a function of both temperature and frequency are presented. The technique used to obtain the values for a and E(sub eff) involves the use of a unique cryogenic probe station designed and built by NASA. Attenuation of gold CPW lines on diamond substrates is compared with that of superconducting CPW lines.

Piezoelectric characterization of Pb(Zr,Ti)O3 thin films deposited on metal foil substrates by dip coating

NASA Astrophysics Data System (ADS)

Hida, Hirotaka; Hamamura, Tomohiro; Nishi, Takahito; Tan, Goon; Umegaki, Toshihito; Kanno, Isaku

2017-10-01

We fabricated the piezoelectric bimorphs composed of Pb(Zr,Ti)O3 (PZT) thin films on metal foil substrates. To efficiently inexpensively manufacture piezoelectric bimorphs with high flexibility, 1.2-µm-thick PZT thin films were directly deposited on both surfaces of 10- and 20-µm-thick bare stainless-steel (SS) foil substrates by dip coating with a sol-gel solution. We confirmed that the PZT thin films deposited on the SS foil substrates at 500 °C or above have polycrystalline perovskite structures and the measured relative dielectric constant and dielectric loss were 323-420 and 0.12-0.17, respectively. The PZT bimorphs were demonstrated by comparing the displacements of the cantilever specimens driven by single- and double-side PZT thin films on the SS foil substrates under the same applied voltage. We characterized the piezoelectric properties of the PZT bimorphs and the calculated their piezoelectric coefficient |e 31,f| to be 0.3-0.7 C/m2.

Real-time observations of interface formation for barium strontium titanate films on silicon

NASA Astrophysics Data System (ADS)

Mueller, A. H.; Suvorova, N. A.; Irene, E. A.; Auciello, O.; Schultz, J. A.

2002-05-01

Ba.5Sr.5TiO3 (BST) film growth by ion sputtering on bare and thermally oxidized silicon was observed in real time using in-situ spectroscopic ellipsometry and time of flight ion scattering and recoil spectrometry techniques. At the outset of BST film deposition on silicon, an approximately 30 Å film with intermediate static dielectric constant (K˜12) and refractive index (n˜2.6 at photon energies of 1.5-3.25 eV) interface layer formed on bare silicon. The interface layer growth rate was greatly reduced on an oxidized silicon substrate. The results have profound implications on the static dielectric constant of BST.

Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

PubMed

Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

2012-04-01

The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (<5 V) pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, J.-Y.; Nielsen, M. C.; Rymaszewski, E. J.; Lu, T.-M.

2000-02-01

Room temperature deposition of tantalum oxide films on metallized silicon substrates was investigated by reactive pulsed magnetron sputtering of Ta in an Ar/O2 ambient. The dielectric constant of the tantalum oxide ranged from 19 to 31 depending on the oxygen percentage [P(%)=PO2/(PO2+PAr)] used during sputtering. The leakage current density was less than 10 nA/cm2 at 0.5 MV/cm electric field and the dielectric breakdown field was greater than 3.8 MV/cm for P=60%. A charge storage as high as 3.3 μF/cm2 was achieved for 70-Å-thick film. Pulse frequency variation (from 20 to 200 kHz) did not give a significant effect in the electrical properties (dielectric constant or leakage current density) of the Ta2O5 films.

Electrical properties of Bi2Mg2/3Nb4/3O7 (BMN) pyrochlore thin films deposited on Pt and Cu metal at low temperatures for embedded capacitor applications

NASA Astrophysics Data System (ADS)

Xian, Cheng-Ji; Park, Jong-Hyun; Ahn, Kyung-Chan; Yoon, Soon-Gil; Lee, Jeong-Won; Kim, Woon-Chun; Lim, Sung-Taek; Sohn, Seung-Hyun; Moon, Jin-Seok; Jung, Hyung-Mi; Lee, Seung-Eun; Lee, In-Hyung; Chung, Yul-Kyo; Jeon, Min-Ku; Woo, Seong-Ihl

2007-01-01

200-nm-thick BMN films were deposited on Pt /TiO2/SiO2/Si and Cu /Ti/SiO2/Si substrates at various temperatures by pulsed laser deposition. The dielectric constant and capacitance density of the films deposited on Pt and Cu electrodes show similar tendency with increasing deposition temperature. On the other hand, dielectric loss of the films deposited on Cu electrode varies from 0.7% to 1.3%, while dielectric loss of films on Pt constantly shows 0.2% even though the deposition temperature increases. The low value of breakdown strength in BMN films on Pt compared to films deposited on Cu electrode was attributed to the increase of surface roughness by the formation of secondary phases at interface between BMN films and Pt electrodes.

Microstrip patch antenna for simultaneous strain and temperature sensing

NASA Astrophysics Data System (ADS)

Mbanya Tchafa, F.; Huang, H.

2018-06-01

A patch antenna, consisting of a radiation patch, a dielectric substrate, and a ground plane, resonates at distinct fundamental frequencies that depend on the substrate dielectric constant and the dimensions of the radiation patch. Since these parameters change with the applied strain and temperature, this study investigates simultaneous strain and temperature sensing using a single antenna that has two fundamental resonant frequencies. The theoretical relationship between the antenna resonant frequency shifts, the temperature, and the applied strain was first established to guide the selection of the dielectric substrate, based on which an antenna sensor with a rectangular radiation patch was designed and fabricated. A tensile test specimen instrumented with the antenna sensor was subjected to thermo-mechanical tests. Experiment results validated the theoretical predictions that the normalized antenna resonant frequency shifts are linearly proportional to the applied strain and temperature changes. An inverse method was developed to determine the strain and temperature changes from the normalized antenna resonant frequency shifts, yielding measurement uncertainty of 0.4 °C and 17.22 μ \\varepsilon for temperature and strain measurement, respectively.

Processing effects on the microstructure and dielectric properties of hydrothermal barium titanate and (barium,strontium)titanate thin films

NASA Astrophysics Data System (ADS)

McCormick, Mark Alan

The goal of this work was to produce BaTiO3 and BaxSr (1-x)TiO3 (BST) thin films with high dielectric constants, using a low-temperature (<100°C) hydrothermal synthesis route. To accomplish this, titanium metal-organic precursor films were spin-cast onto metal-coated glass substrates and converted to polycrystalline BaTiO3 or BST upon reacting in aqueous solutions of Ba(OH)2 or Ba(OH)2 and Sr(OH)2. The influences of solution molarity, processing temperature, and reaction time on thin film reaction kinetics, microstructure, and dielectric properties were examined for BaTiO3 films. Post-deposition annealing at temperatures as low as 200°C substantially affected the lattice parameter, dielectric constant, and dielectric loss. This behavior is explained in terms of hydroxyl defect incorporation during film formation. Current-voltage (I-V) measurements were performed to determine the dominant conduction mechanism(s) during application of a do field, and to extract the metal/ceramic barrier height. In particular, Schottky barrier-limited conduction and Poole-Frenkel conduction were investigated as potential leakage mechanisms. For BST thin films, film stoichiometry deviated from the initial solution composition, with a preferred incorporation of Sr2+ into the perovskite lattice. The dielectric constant of the BST films was measured as a function of composition (Ba:Sr ratio) and temperature over the range 25--150°C. Finally, capacitance-voltage (C-V) measurements were made for BST films to determine the influence of film composition on dielectric tunability.

Enhanced dielectric properties of Pb0.92La0.08 Zr0.52Ti0.48O3 films with compressive stress

NASA Astrophysics Data System (ADS)

Ma, Beihai; Liu, Shanshan; Tong, Sheng; Narayanan, Manoj; (Balu) Balachandran, U.

2012-12-01

We deposited ferroelectric (Pb0.92La0.08)(Zr0.52Ti0.48)O3 (PLZT 8/52/48) films on nickel foils and platinized silicon (PtSi) substrates by chemical solution deposition. Prior to the deposition of PLZT, a conductive oxide buffer layer of LaNiO3 (LNO) was deposited on the nickel foil. Residual stresses of the films were determined by x-ray diffraction. Compressive stress of ≈-370 MPa and tensile stress of ≈250 MPa were measured in ≈2-μm-thick PLZT grown on LNO-buffered Ni foil and PtSi substrate, respectively. We also measured the following electrical properties for the PLZT films grown on LNO-buffered Ni and PtSi substrates, respectively: remanent polarization, ≈23.5 μC/cm2 and ≈10.1 μC/cm2; coercive electric field, ≈23.8 kV/cm and ≈27.9 kV/cm; dielectric constant at room temperature, ≈1300 and ≈1350; and dielectric loss at room temperature, ≈0.06 and ≈0.05. Weibull analysis determined the mean breakdown strength to be 2.6 MV/cm and 1.5 MV/cm for PLZT films grown on LNO-buffered Ni and PtSi substrates, respectively. The difference in dielectric properties and breakdown strength can be attributed to the residual stress in the PLZT films. Our results suggest that compressive stress enhances the dielectric breakdown strength of the PLZT films.

Design and analysis of a low actuation voltage electrowetting-on-dielectric microvalve for drug delivery applications.

PubMed

Samad, Mst Fateha; Kouzani, Abbas Z

2014-01-01

This paper presents a low actuation voltage microvalve with optimized insulating layers that manipulates a conducting ferro-fluid droplet by the principle of electrowetting-on-dielectric (EWOD). The proposed EWOD microvalve contains an array of chromium (Cr) electrodes on the soda-lime glass substrate, covered by both dielectric and hydrophobic layers. Various dielectric layers including Su-8 2002, Polyvinylidenefluoride (PVDF) and Cyanoethyl pullulan (CEP), and thin (50 nm) hydrophobic Teflon and Cytonix are used to analyze the EWOD microvalves at different voltages. The Finite Element Method (FEM) based software, Coventorware is used to carry out the simulation analysis. It is observed that the EWOD microvalve having a CEP dielectric layer with dielectric constant of about 20 and thickness of 1 μm, and a Cytonix hydrophobic layer with thickness of 50 nm operated the conducting ferro-fluid droplet at the actuation voltage as low as 7.8 V.

Low-Frequency Dielectric Responses of Barium Strontium Titanate Thin Films with Conducting Perovskite LaNiO3 Electrode

NASA Astrophysics Data System (ADS)

Lee, Su-Jae; Moon, Seung-Eon; Ryu, Han-Cheol; Kwak, Min-Hwan; Kim, Young-Tae

2002-07-01

Highly (h00)-oriented (Ba,Sr)TiO3 [BST] thin films were deposited by pulsed laser depositi on on the perovskite LaNiO3 metallic oxide layer as a bottom electrode. The LaNiO3 films were deposited on SiO2/Si substrates by the rf-magnetron sputtering method. The crystal line phases of the BST film were characterized by X-ray θ-2θ, ω-rocking curve and Φ-scan diffraction measurements. The surface microstructure observed by scanning electron mi croscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxations in the measured frequency region. The origins of these low-frequency dielectric relaxations are attributed to ionized space charge carriers such as the oxygen vacancies and defects in the BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We also studied the capacitance-voltage characteristics of BST films.

Microstrip Antenna Generates Circularly Polarized Beam

NASA Technical Reports Server (NTRS)

Huang, J.

1986-01-01

Circular microstrip antenna excited with higher order transverse magnetic (TM) modes generates circularly polarized, conical radiation patterns. Found both theoretically and experimentally that peak direction of radiation pattern is varied within wide angular range by combination of mode selection and loading substrate with materials of different dielectric constants.

Visualizing the optical field strengths in Au/dielectric nanostructures and its correlation to SERS enhancements

NASA Astrophysics Data System (ADS)

Rajesh, Y.; Sangani, L. D. Varma; Shaik, Ummar Pasha; Gaur, Anshu; Mohiddon, Md Ahamad; Krishna, M. Ghanashyam

2017-05-01

The role of dielectric surrounding over the Au nanostructure for surface plasmon resonance (SPR) behavior is investigated by scanning near field optical microscopy (SNOM). The observed optical field strengths are correlated with the surface enhanced Raman scattering (SERS) enhancement recorded for R6G molecule. Discontinuous nanostructured Au thin films are deposited by RF magnatron sputtering at very low rate on to three different dielectric substrates, ZnO, TiO2 and SiO2. These three Au/dielectric nanostructures are investigated using SNOM by illuminating it in near field and collecting in transmission far field configuration. The observed optical near field images of the three different nanostructures are discussed by taking their dielectric constant into the account. The SERS enhancements are correlated with the optical field strengths derived from the near field optical imaging.

Analysis of structural and optical properties of annealed fullerene thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Ali, H. A. M.; Gadallah, A.-S.; Atta Khedr, M.; Afify, H. A.

2015-08-01

Fullerene thin films were thermally deposited onto different substrates. The films annealed at 523 K for 10 h. X-ray diffraction technique was used to examine the structure of the films. The morphology of films was examined by field emission scanning electron microscopy. Fourier transform infrared spectra were recorded in wavenumber range 400-2000 cm-1. The optical characteristics were analyzed using UV- Vis-NIR spectrophotometric measurements in the spectral range 200-2500 nm. The refractive index and extinction coefficient were determined. Some dispersion parameters were calculated such as single oscillator energy, dispersion energy, dielectric constant at high frequency and lattice dielectric constant. As well as, the nonlinear optical susceptibility χ(3) and nonlinear refractive index n2 were determined.

Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd{sub 2}O{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shekhter, P., E-mail: Pini@tx.technion.ac.il; Amouyal, Y.; Eizenberg, M.

2016-07-07

One of the approaches for realizing advanced high k insulators for metal oxide semiconductor field effect transistors based devices is the use of rare earth oxides. When these oxides are deposited as epitaxial thin films, they demonstrate dielectric properties that differ greatly from those that are known for bulk oxides. Using structural and spectroscopic techniques, as well as first-principles calculations, Gd{sub 2}O{sub 3} films deposited on Si (111) and Ge (111) were characterized. It was seen that the same 4 nm thick film, grown simultaneously on Ge and Si, presents an unstrained lattice on Ge while showing a metastable phase onmore » Si. This change from the cubic lattice to the distorted metastable phase is characterized by an increase in the dielectric constant of more than 30% and a change in band gap. The case in study shows that extreme structural changes can occur in ultra-thin epitaxial rare earth oxide films and modify their dielectric properties when the underlying substrate is altered.« less

First-principles investigation of band offsets and dielectric properties of Silicon-Silicon Nitride interfaces

NASA Astrophysics Data System (ADS)

Pham, Tuan Anh; Li, Tianshu; Gygi, Francois; Galli, Giulia

2011-03-01

Silicon Nitride (Si3N4) is a possible candidate material to replace or be alloyed with SiO2 to form high-K dielectric films on Si substrates, so as to help prevent leakage currents in modern CMOS transistors. Building on our previous work on dielectric properties of crystalline and amorphous Si3N4 slabs, we present an analysis of the band offsets and dielectric properties of crystalline-Si/amorphous Si3N4 interfaces based on first principles calculations. We discuss shortcomings of the conventional bulk-plus line up approach in band offset calculations for systems with an amorphous component, and we present the results of band offsets obtained from calculations of local density of states. Finally, we describe the role of bonding configurations in determining band edges and dielectric constants at the interface. We acknowledge financial support from Intel Corporation.

ZrO2 Layer Thickness Dependent Electrical and Dielectric Properties of BST/ZrO2/BST Multilayer Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahoo, S. K.; Misra, D.; Agrawal, D. C.

2011-01-01

Recently, high K materials play an important role in microelectronic devices such as capacitors, memory devices, and microwave devices. Now a days ferroelectric barium strontium titanate [Ba{sub x}Sr{sub 1-x}TiO{sub 3}, (BST)] thin film is being actively investigated for applications in dynamic random access memories (DRAM), field effect transistor (FET), and tunable devices because of its properties such as high dielectric constant, low leakage current, low dielectric loss, and high dielectric breakdown strength. Several approaches have been used to optimize the dielectric and electrical properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found thatmore » inserting a ZrO{sub 2} layer in between two BST layers results in a significant reduction in dielectric constant, loss tangent, and leakage current in the multilayer thin films. Also it is shown that the properties of multilayer structure are found to depend strongly on the sublayer thicknesses. In this work the effect of ZrO{sub 2} layer thickness on the dielectric, ferroelectric as well as electrical properties of BST/ZrO{sub 2}/BST multilayer structure is studied. The multilayer Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3}/ZrO{sub 2}/Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} film is deposited by a sol-gel process on the platinized Si substrate. The thickness of the middle ZrO{sub 2} layer is varied while keeping the top and bottom BST layer thickness as fixed. It is observed that the dielectric constant, dielectric loss tangent, and leakage current of the multilayer films reduce with the increase of ZrO{sub 2} layer thickness and hence suitable for memory device applications. The ferroelectric properties of the multilayer film also decrease with the ZrO{sub 2} layer thickness.« less

Fully Printed Stretchable Thin-Film Transistors and Integrated Logic Circuits.

PubMed

Cai, Le; Zhang, Suoming; Miao, Jinshui; Yu, Zhibin; Wang, Chuan

2016-12-27

This paper reports intrinsically stretchable thin-film transistors (TFTs) and integrated logic circuits directly printed on elastomeric polydimethylsiloxane (PDMS) substrates. The printed devices utilize carbon nanotubes and a type of hybrid gate dielectric comprising PDMS and barium titanate (BaTiO 3 ) nanoparticles. The BaTiO 3 /PDMS composite simultaneously provides high dielectric constant, superior stretchability, low leakage, as well as good printability and compatibility with the elastomeric substrate. Both TFTs and logic circuits can be stretched beyond 50% strain along either channel length or channel width directions for thousands of cycles while showing no significant degradation in electrical performance. This work may offer an entry into more sophisticated stretchable electronic systems with monolithically integrated sensors, actuators, and displays, fabricated by scalable and low-cost methods for real life applications.

Antireflection coating on metallic substrates for solar energy and display applications

NASA Astrophysics Data System (ADS)

Hsiao, Wei-Yuan; Tang, Chien-Jen; Lee, Kun-Hsien; Jaing, Cheng-Chung; Kuo, Chien-Cheng; Chen, Hsi-Chao; Chang, Hsing-Hua; Lee, Cheng-Chung

2010-08-01

Normally metallic films are required for solar energy and display related coatings. To increase the absorbing efficiency or contrast, it is necessary to apply an antireflection coating (ARC) on the metal substrate. However, the design of a metal substrate is very different from the design of a dielectric substrate, since the optical constant of metallic thin film is very dependent on its thickness and microstructure. In this study, we design and fabricate ARCs on Al substrates using SiO2 and Nb2O5 as the dielectric materials and Nb for the metal films. The ARC successfully deposited on the Al substrate had the following structure: air/SiO2/Nb2O5/Metal/Nb2O5/Al. The measured average reflectance of the ARC is less than 1% in the visible region. We found that it is better to use a highly refractive material than a low refractive material. The thickness of the metallic film can be thicker with the result that it is easier to control and has a lesser total thickness. The total thickness of the ARC is less than 200 nm. We successfully fabricated a solar absorber and OLED device with the ARC structure were successfully fabricated.

Increased dielectric constant in the water treated by extremely low frequency electromagnetic field and its possible biological implication

NASA Astrophysics Data System (ADS)

Shen, Xun

2011-12-01

Water is the most abundant compound on the surface of the Earth, and can be considered to be the most important molecule in living systems. Water plays a variety of cellular functions, being the solvent of most biological molecules, a substrate and product of enzymatic catalysis, an important component of macromolecules, and more. Because of importance of water in life, many physical and chemical treatments were invented to improve the quality of drinking water. Among them, the treatment with electromagnetic field is a well-known, but much debatable physical method. Although electromagnetic field has been utilized for treating water for 80 years, many reports on beneficial biological effect of electromagnetic field-treated water were either anecdotal or less convincing. To explore if there is any physical base for understanding possible biological effects of electromagnetic field-treated water, dielectric relaxation spectra of deionized water treated with an extremely low frequency electromagnetic (ELFEM) field were measured and compared with that of untreated water. It was surprisingly found that the dielectric constant of the ELFEM field-treated water was 3.7% higher than the control over the frequency range of 1-10 GHz, which indicates a higher molecular polarization occurs in the ELFEM field-treated water. Electrostatic and thermodynamic analysis shows that proteins or other biomacromolecules would have more reduced free energy when they are hydrated in high dielectric constant water. Since free energy is of crucial importance for stability of proteins, protein folding and its conformational change, as well as catalytic activity of enzymes, the free energy reduction of the biomacromolecules hydrated with higher dielectric constant water may be responsible for many possible biological effects of electromagnetic field treated water.

Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

NASA Astrophysics Data System (ADS)

Jilani, Asim; Abdel-wahab, M. Sh; Al-ghamdi, Attieh A.; Dahlan, Ammar sadik; Yahia, I. S.

2016-01-01

The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ(3) was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

Suspended Integrated Strip-line Transition Design for Highly Integrated Radar Systems

DTIC Science & Technology

2017-03-01

RF Circuit Design,” Second Edition, Pearson Education, 2009. 3. B. Ma, A. Chousseaud, and S . Toutain, “A new design of compact planar microstrip...technology. The measured results show good correlation to the simulated results with a return loss and insertion loss of less than 10 dB and greater...1) where is the cavity width, is the thickness of substrate 3, is the cavity height, and is the dielectric constant of substrate 3, and m/ s

Growth temperature modulated phase evolution and functional characteristics of high quality Pb1-x Lax (Zr0.9Ti0.1)O3 thin films

NASA Astrophysics Data System (ADS)

Kumar, Anuj; Pawar, Shuvam; Singh, Kirandeep; Kaur, Davinder

2018-05-01

In this study, we have reported the influence of growth temperature on perovskite phase evolution in sputtered deposited high quality Pb1-x Lax (Zr0.9 Ti0.1)O3 (PLZT) thin films on Pt/Ti/SiO2/Si substrate. PLZT thin films were fabricated at substrate temperature ranging from 400 to 700 °C. We have investigated the structural, dielectric, ferroelectric and leakage current characteristics of these thin films. XRD patterns reveal that 600 °C is the optimized temperature to deposit highly (110) oriented perovskite phase PLZT thin film. The further increase in temperature (700 °) causes reappearance of additional peaks corresponding to lead deficient pyrochlore phase. All PLZT thin films show decrease in dielectric constant with frequency. However, PLZT thin film fabricated at 600 °C displays dielectric constant ˜532 at 1 MHz frequency which is relatively higher than other deposited thin films. The P-E loops of these PLZT thin films exhibit strong dependence on deposition temperature. The pure perovskite PZLT thin film shows saturation polarization of ˜51.2µC/cm2 and coercive field (2Ec) ˜67.85 kV/cm. These high quality PLZT thin films finds their applications in non-volatile memory and nano-electro-mechanical systems (NEMS).

Improved dielectric properties of CaCu3Ti4O12 films with a CaTiO3 interlayer on Pt/TiO2/SiO2/Si substrates prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Lee, Sung-Yun; Kim, Hui Eun; Jo, William; Kim, Young-Hwan; Yoo, Sang-Im

2015-11-01

We report the greatly improved dielectric properties of CaCu3Ti4O12 (CCTO) films with a 60 nm-thick CaTiO3 (CTO) interlayer on Pt/TiO2/SiO2/Si substrates. Both CCTO films and CTO interlayers were prepared by pulsed laser deposition (PLD). With increasing the thickness of CCTO from 200 nm to 1.3 μm, the dielectric constants ( ɛ r ) at 10 kHz in both CCTO single-layered and CCTO/CTO double-layered films increased from ˜260 to ˜6000 and from ˜630 to ˜3700, respectively. Compared with CCTO single-layered films, CCTO/CTO double-layered films irrespective of CCTO film thickness exhibited a remarkable decrease in their dielectric losses ( tanδ) (<0.1 at the frequency region of 1 - 100 kHz) and highly reduced leakage current density at room temperature. The reduced leakage currents in CCTO/CTO double-layered films are attributable to relatively higher trap ionization energies in the Poole-Frenkel conduction model. [Figure not available: see fulltext.

Accurate Measurement of the Optical Constants n and k for a Series of 57 Inorganic and Organic Liquids for Optical Modeling and Detection.

PubMed

Myers, Tanya L; Tonkyn, Russell G; Danby, Tyler O; Taubman, Matthew S; Bernacki, Bruce E; Birnbaum, Jerome C; Sharpe, Steven W; Johnson, Timothy J

2018-04-01

For optical modeling and other purposes, we have created a library of 57 liquids for which we have measured the complex optical constants n and k. These liquids vary in their nature, ranging in properties that include chemical structure, optical band strength, volatility, and viscosity. By obtaining the optical constants, one can model most optical phenomena in media and at interfaces including reflection, refraction, and dispersion. Based on the works of others, we have developed improved protocols using multiple path lengths to determine the optical constants n/k for dozens of liquids, including inorganic, organic, and organophosphorus compounds. Detailed descriptions of the measurement and data reduction protocols are discussed; agreement of the derived optical constant n and k values with literature values are presented. We also present results using the n/k values as applied to an optical modeling scenario whereby the derived data are presented and tested for models of 1 µm and 100 µm layers for dimethyl methylphosphonate (DMMP) on both metal (aluminum) and dielectric (soda lime glass) substrates to show substantial differences between the reflected signal from highly reflective substrates and less-reflective substrates.

The effects of strain relaxation on the dielectric properties of epitaxial ferroelectric Pb(Zr0.2Ti0.8)TiO3 thin films

NASA Astrophysics Data System (ADS)

Khan, Asif Islam; Yu, Pu; Trassin, Morgan; Lee, Michelle J.; You, Long; Salahuddin, Sayeef

2014-07-01

We study the effects of strain relaxation on the dielectric properties of epitaxial 40 nm Pb(Zr0.2Ti0.8)TiO3 (PZT) films. A significant increase in the defect and dislocation density due to strain relaxation is observed in PZT films with tetragonality c/a < 1.07 grown on SrTiO3 (001) substrates, which results in significant frequency dispersion of the dielectric constant and strong Rayleigh type behavior in those samples. This combined structural-electrical study provides a framework for investigating strain relaxation in thin films and can provide useful insights into the mechanisms of fatigue in ferroelectric materials.

Realizing thin electromagnetic absorbers for wide incidence angles from commercially available planar circuit materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glover, Brian B; Whites, Kieth W; Radway, Matthew J

2009-01-01

In this study, recent work on engineering R-card surface resistivity with printed metallic patterns is extended to the design of thin electromagnetic absorbers. Thin electromagnetic absorbers for wide incidence angles and both polarizations have recently been computationally verified by Luukkonen et al.. These absorbers are analytically modeled high-impedance surfaces with capacitive arrays of square patches implemented with relatively high dielectric constant and high loss substrate. However, the advantages provided by the accurate analytical model are largely negated by the need to obtain high dielectric constant material with accurately engineered loss. Fig. I(c) illustrates full-wave computational results for an absorber withoutmore » vias engineered as proposed by Luukkonen et al.. Unique values for the dielectric loss are required for different center frequencies. Parameters for the capacitive grid are D=5.0 mm and w=O.l mm for a center frequency of 3.36 GHz. The relative permittivity and thickness is 9.20(1-j0.234) and 1=3.048 mm. Consider a center frequency of5.81 GHz and again 1=3.048 mm, the required parameters for the capacitive grid are D=2.0 mm and w=0.2 mm where the required relative permittivity is now 9.20(1-j0.371) Admittedly, engineered dielectrics are themselves a historically interesting and fruitful research area which benefits today from advances in monolithic fabrication using direct-write of dielectrics with nanometer scale inclusions. However, our objective in the present study is to realize the advantages of the absorber proposed by Luukkonen et al. without resort to engineered lossy dielectrics. Specifically we are restricted to commercially available planer circuit materials without use of in-house direct-write technology or materials engineering capability. The materials considered here are TMM 10 laminate with (35 {mu}lm copper cladding with a complex permittivity 9.20-j0.0022) and Ohmegaply resistor conductor material (maximum 250 {Omega}/sq.). A thin electromagnetic absorber for incidence angles greater than 30deg. but less than 60deg. and both polarizations is computationally demonstrated. This absorber utilizes high-permittivity, low-loss microwave substrate in conjunction with an engineered lossy sheet impedance. The lossy sheet impedance is easily engineered with simple analytical approximations and can be manufactured from commercially available laminate materials on microwave substrate.« less

[Activities of the Department of Electrical Engineering, Howard University

NASA Technical Reports Server (NTRS)

Yalamanchili, Raj C.

1997-01-01

Theoretical derivations, computer analysis and test data are provided to demonstrate that the cavity model is a feasible one to analyze thin-substrate, rectangular-patch microstrip antennas. Seven separate antennas were tested. Most of the antennas were designed to resonate at L-band frequencies (1-2 GHz). One antenna was designed to resonate at an S-band (2-4 GHz) frequency of 2.025 GHz. All dielectric substrates were made of Duroid, and were of varying thicknesses and relative dielectric constant values. Theoretical derivations to calculate radiated free space electromagnetic fields and antenna input impedance were performed. MATHEMATICA 2.2 software was used to generate Smith Chart input impedance plots, normalized relative power radiation plots and to perform other numerical manipulations. Network Analyzer tests were used to verify the data from the computer programming (such as input impedance and VSWR). Finally, tests were performed in an anechoic chamber to measure receive-mode polar power patterns in the E and H planes. Agreement between computer analysis and test data is presented. The antenna with the thickest substrate (e(sub r) = 2.33,62 mils thick) showed the worst match to theoretical impedance data. This is anticipated due to the fact that the cavity model generally loses accuracy when the dielectric substrate thickness exceeds 5% of the antenna's free space wavelength. A method of reducing computer execution time for impedance calculations is also presented.

Fabrication and electrical properties of (111) textured (Ba0.6Sr0.4)TiO3 film on platinized Si substrate

NASA Astrophysics Data System (ADS)

Wang, Yi; Liu, Baoting; Wei, Feng; Yang, Zhimin; Du, Jun

2007-01-01

The authors report the fabrication of (Ba0.6Sr0.4)TiO3 (BST) film on Pt /Si(001) substrate without Ti adhesion layer by magnetron sputtering. X-ray diffraction technique is used to characterize the orientation and phase purity of BST/Pt heterostructure. It is found that both BST and Pt films are (111) textured. The (111) BST films are observed to have high tunability of 49.4%; the dielectric constant and dielectric loss of the BST film are about 682 and 0.015, respectively. The leakage current density of BST film agrees well with the space-charge-limited current theory at room temperature and is only 3.90×10-8A/cm2 at 455kV/cm.

Control of Dielectric Constant and Anti-Bacterial Activity of PVA-PEG/x-SnO2 Nanofiber

NASA Astrophysics Data System (ADS)

Diantoro, M.; Sari, L. A.; Istirohah, T.; Kusumawati, A. D.; Nasikhudin; Sunaryono

2018-05-01

Research in the utilization of organic natural materials for electronic devices and for the biological application becoming extensively studied. We report a comprehensive review of the role of SnO2 nanoparticle and the effect of light intensity on toxicity properties, antibacterial activity, microstructure and electrical properties of PVA-PEG nanofiber films. The PVA-PEG/SnO2 nanofiber structure has been successfully fabricated on the ITO-glass substrate. Characterization was performed on samples using FTIR, XRD, SEM, toxicity and antibacterial tests, as well as LCR measurement. The presence of various light intensities has also measured the dielectric constant. The addition of SnO2 nanoparticle influenced the structure of the PVA-PEG/SnO2 nanofiber bonding functional group indicated by the appearance of Sn-O-Sn peaks at 648.08 cm-1 and 958 cm-1 wavenumbers. The addition of SnO2 nanoparticles affects the grain size of SnO2. Addition of SnO2 nanoparticles increases the detected toxicity voltage but is still below the threshold. It means the compound is not toxic, or safe to use in the body. The film lacks the antibacterial power of S. Aurelius. The addition of nanoparticles SnO2 increases the dielectric constant but decreases with increasing frequency of input voltage and the intensity of light employed to PVA-PEG/SnO2 nanofiber. The application of the light intensity reduces the dielectric constant of the PVA-PEG/SnO2 nanofiber in all nanoparticle doping ranges.

Dielectric studies on PEG-LTMS based polymer composites

NASA Astrophysics Data System (ADS)

Patil, Ravikumar V.; Praveen, D.; Damle, R.

2018-02-01

PEG LTMS based polymer composites were prepared and studied for dielectric constant variation with frequency and temperature as a potential candidate with better dielectric properties. Solution cast technique is used for the preparation of polymer composite with five different compositions. Samples show variation in dielectric constant with frequency and temperature. Dielectric constant is large at low frequencies and higher temperatures. Samples with larger space charges have shown larger dielectric constant. The highest dielectric constant observed was about 29244 for PEG25LTMS sample at 100Hz and 312 K.

Role of geometric parameters in electrical measurements of insulating thin films deposited on a conductive substrate

NASA Astrophysics Data System (ADS)

Kumar, S.; Gerhardt, R. A.

2012-03-01

The effects of film thickness, electrode size and substrate thickness on the impedance parameters of alternating frequency dielectric measurements of insulating thin films deposited on conductive substrates were studied through parametric finite-element simulations. The quasi-static forms of Maxwell's electromagnetic equations in a time harmonic mode were solved using COMSOL Multiphysics® for several types of 2D models (linear and axisymmetric). The full 2D model deals with a configuration in which the impedance is measured between two surface electrodes on top of a film deposited on a conductive substrate. For the simplified 2D models, the conductive substrate is ignored and the two electrodes are placed on the top and bottom of the film. By comparing the full model and the simplified models, approximations and generalizations are deduced. For highly insulating films, such as the case of insulating SiO2 films on a conducting Si substrate, even the simplified models predict accurate capacitance values at all frequencies. However, the edge effects on the capacitance are found to be significant when the film thickness increases and/or the top electrode contact size decreases. The thickness of the substrate affects predominantly the resistive components of the dielectric response while having no significant effect on the capacitive components. Changing the electrode contact size or the film thickness determines the specific values of the measured resistance or capacitance while the material time constant remains the same, and thus this affects the frequency dependence that is able to be detected. This work highlights the importance of keeping in mind the film thickness and electrode contact size for the correct interpretation of the measured dielectric properties of micro/nanoscale structures that are often investigated using nanoscale capacitance measurements.

Morphology, Structural and Dielectric Properties of Vacuum Evaporated V2O5 Thin Films

NASA Astrophysics Data System (ADS)

Sengodan, R.; Shekar, B. Chandar; Sathish, S.

Vanadium pentoxide (V2O5) thin films were deposited on well cleaned glass substrate using evaporation technique under the pressure of 10-5 Torr. The thickness of the films was measured by the multiple beam interferometry technique and cross checked by using capacitance method. Metal-Insulator-Metal (MIM) structure was fabricated by using suitable masks to study dielectric properties. The dielectric properties were studied by employing LCR meter in the frequency range 12 Hz to 100 kHz for various temperatures. The temperature co- efficient of permittivity (TCP), temperature co-efficient of capacitance (TCC) and dielectric constant (ɛ) were calculated. The activation energy was calculated and found to be very low. The activation energy was found to be increasing with increase in frequency. The obtained low value of activation energy suggested that the hopping conduction may be due to electrons rather than ions.

Thickness Dependent Structural and Dielectric Properties of Calcium Copper Titanate Thin Films Produced by Spin-Coating Method for Microelectronic Devices

NASA Astrophysics Data System (ADS)

Thiruramanathan, P.; Sankar, S.; Marikani, A.; Madhavan, D.; Sharma, Sanjeev K.

2017-07-01

Calcium copper titanate (CaCu3Ti4O12, CCTO) thin films have been deposited on platinized silicon [(111)Pt/Ti/SiO2/Si] substrate through a sol-gel spin coating technique and annealed at 600-900°C with a variation of 100°C per sample for 3 h. The activation energy for crystalline growth, as well as optimal annealing temperature (900°C) of the CCTO crystallites was studied by x-ray diffraction analysis (XRD). Thickness dependent structural, morphological, and optical properties of CCTO thin films were observed. The field emission scanning electron microscopy (FE-SEM) verified that the CCTO thin films are uniform, fully covered, densely packed, and the particle size was found to be increased with film thickness. Meanwhile, quantitative analysis of dielectric properties (interfacial capacitance, dead layers, and bulk dielectric constant) of CCTO thin film with metal-insulator-metal (M-I-M) structures has been investigated systematically using a series capacitor model. Room temperature dielectric properties of all the samples exhibit dispersion at low frequencies, which can be explained based on Maxwell-Wagner two-layer models and Koop's theory. It was found that the 483 nm thick CCTO film represents a high dielectric constant ( ɛ r = 3334), low loss (tan δ = 3.54), capacitance ( C = 4951 nF), which might satisfy the requirements of embedded capacitor.

Improved Dielectric Films For Capacitors

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S.; Lewis, Carol R.; Cygan, Peter J.; Jow, T. Richard

1994-01-01

Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myers, Tanya L.; Tonkyn, Russell G.; Danby, Tyler O.

For optical modeling and other purposes, we have created a library of 57 liquids for which we have measured the complex optical constants n and k. These liquids vary in their nature, ranging in properties including chemical structure, optical band strength, volatility and viscosity. By obtaining the optical constants one can in principle model most optical phenomena in media and at interfaces including reflection, refraction and dispersion. Based on the original methods of J.E. Bertie et al.1 [1Bert1], we have developed improved protocols using multiple path lengths to determine the optical constants n/k for dozens of liquids, including inorganic, organicmore » and organophosphorus compounds. Detailed descriptions of the measurement and data reduction protocols are discussed; agreement of the derived optical constant n and k values with literature values are presented. We also present results using the n/k values as applied to an optical modeling scenario whereby the derived data are presented and tested for models of 1 µm and 100 µm layers for DMMP (dimethyl methyl phosphonate) on both metal (aluminum) and dielectric (soda lime glass) substrates to show substantial differences between the reflected signal from highly reflective substrates and less-reflective substrates.« less

Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

NASA Astrophysics Data System (ADS)

Bai, Gang; Xie, Qiyun; Liu, Zhiguo; Wu, Dongmei

2015-08-01

A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected.

Compact Double-P Slotted Inset-Fed Microstrip Patch Antenna on High Dielectric Substrate

PubMed Central

Ahsan, M. R.; Islam, M. T.; Habib Ullah, M.; Mahadi, W. N. L.; Latef, T. A.

2014-01-01

This paper presents a compact sized inset-fed rectangular microstrip patch antenna embedded with double-P slots. The proposed antenna has been designed and fabricated on ceramic-PTFE composite material substrate of high dielectric constant value. The measurement results from the fabricated prototype of the antenna show −10 dB reflection coefficient bandwidths of 200 MHz and 300 MHz with center resonant frequency of 1.5 GHz and 4 GHz, respectively. The fabricated antenna has attained gains of 3.52 dBi with 81% radiation efficiency and 5.72 dBi with 87% radiation efficiency for lower band and upper band, respectively. The measured E- and H-plane radiation patterns are also presented for better understanding. Good agreement between the simulation and measurement results and consistent radiation patterns make the proposed antenna suitable for GPS and C-band applications. PMID:25165750

Compact double-p slotted inset-fed microstrip patch antenna on high dielectric substrate.

PubMed

Ahsan, M R; Islam, M T; Habib Ullah, M; Mahadi, W N L; Latef, T A

2014-01-01

This paper presents a compact sized inset-fed rectangular microstrip patch antenna embedded with double-P slots. The proposed antenna has been designed and fabricated on ceramic-PTFE composite material substrate of high dielectric constant value. The measurement results from the fabricated prototype of the antenna show -10 dB reflection coefficient bandwidths of 200 MHz and 300 MHz with center resonant frequency of 1.5 GHz and 4 GHz, respectively. The fabricated antenna has attained gains of 3.52 dBi with 81% radiation efficiency and 5.72 dBi with 87% radiation efficiency for lower band and upper band, respectively. The measured E- and H-plane radiation patterns are also presented for better understanding. Good agreement between the simulation and measurement results and consistent radiation patterns make the proposed antenna suitable for GPS and C-band applications.

Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

PubMed Central

Heo, Jae Sang; Choi, Seungbeom; Jo, Jeong-Wan; Kang, Jingu; Park, Ho-Hyun; Kim, Yong-Hoon; Park, Sung Kyu

2017-01-01

In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL) can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm2/Vs were achieved (maximum mobility of 24 cm2/Vs). Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric. PMID:28772972

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ziwen; Xue, Zhongying; Zhang, Miao

Direct growth of graphene on dielectric substrates is a prerequsite for the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis directly on dielectric substrates always involves metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. We propose herein a semiconducting Ge-assisted chemical vapor deposition approach to directly grow monolayer graphene on arbitrary dielectric substrates. By pre-patterning of catalytic Ge layer, the graphene with desired pattern can be achieved with extreme ease. Due to the catalysis of Ge, monolayer graphene is able to form on Ge covered dielectric substrates including SiOmore » 2/Si, quartz glass and sapphire substrates. Optimization of the process parameters leads to the complete sublimation of catalytic Ge layer during or immediately after monolayer graphene formation, thus resulting in direct deposition of large-area continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on transparent dielectric substrate using the proposed approach has exhibited wide applications, e.g., in defogger and in thermochromic displays, with both devices possessing excellent performances.« less

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices

DOE PAGES

Wang, Ziwen; Xue, Zhongying; Zhang, Miao; ...

2017-05-31

Direct growth of graphene on dielectric substrates is a prerequsite for the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis directly on dielectric substrates always involves metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. We propose herein a semiconducting Ge-assisted chemical vapor deposition approach to directly grow monolayer graphene on arbitrary dielectric substrates. By pre-patterning of catalytic Ge layer, the graphene with desired pattern can be achieved with extreme ease. Due to the catalysis of Ge, monolayer graphene is able to form on Ge covered dielectric substrates including SiOmore » 2/Si, quartz glass and sapphire substrates. Optimization of the process parameters leads to the complete sublimation of catalytic Ge layer during or immediately after monolayer graphene formation, thus resulting in direct deposition of large-area continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on transparent dielectric substrate using the proposed approach has exhibited wide applications, e.g., in defogger and in thermochromic displays, with both devices possessing excellent performances.« less

EXPRESS: Accurate Measurement of the Optical Constants n and k for a Series of 57 Inorganic and Organic Liquids for Optical Modeling and Detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myers, Tanya L.; Tonkyn, Russell G.; Danby, Tyler O.

For optical modeling and other purposes, we have created a library of 57 liquids for which we have measured the complex optical constants n and k. These liquids vary in their nature, ranging in properties including chemical structure, optical band strength, volatility and viscosity. By obtaining the optical constants one can in principle model most optical phenomena in media and at interfaces including reflection, refraction and dispersion. Based on the original methods of J.E. Bertie et al.1 [1Bert1], we have developed improved protocols using multiple path lengths to determine the optical constants n/k for dozens of liquids, including inorganic, organicmore » and organophosphorus compounds. Detailed descriptions of the measurement and data reduction protocols are discussed; agreement of the derived optical constant n and k values with literature values are presented. We also present results using the n/k values as applied to an optical modeling scenario whereby the derived data are presented and tested for models of 1 µm and 100 µm layers for DMMP (dimethyl methyl phosphonate) on both metal (aluminum) and dielectric (soda lime glass) substrates to show substantial differences between the reflected signal from highly reflective substrates and less-reflective substrates.« less

Thermally Stable, Piezoelectric and Pyroelectric Polymeric Substrates and Method Relating Thereto

NASA Technical Reports Server (NTRS)

Simpson, Joycelyn O. (Inventor); St.Claire, Terry L. (Inventor)

2002-01-01

A thermally stable, piezoelectric and pyroelectric polymeric substrate was prepared, This thermally stable, piezoelectric and pyroelectric polymeric substrate may be used to prepare electromechanical transducers, thermomechanical transducers, accelerometers, acoustic sensors, infrared sensors, pressure sensors, vibration sensors, impact sensors. in-situ temperature sensors, in-situ stress/strain sensors, micro actuators, switches. adjustable fresnel lenses, speakers, tactile sensors, weather sensors, micro positioners, ultrasonic devices, power generators, tunable reflectors, microphones, and hydrophones. The process for preparing these polymeric substrates includes: providing a polymeric substrate having a softening temperature greater than 100 C; depositing a metal electrode material onto the polymer film; attaching a plurality of electrical leads to the metal electrode coated polymeric substrates; heating the metal electrode coated polymeric substrate in a low dielectric medium; applying a voltage to the heated metal electrode coated polymeric substrate to induce polarization; and cooling the polarized metal electrode coated polymeric electrode while maintaining a constant voltage.

Thermally Stable, Piezoelectric and Pyroelectric Polymeric Substrates

NASA Technical Reports Server (NTRS)

Simpson, Joycely O. (Inventor); St.Clair, Terry L. (Inventor)

1999-01-01

A thermally stable, piezoelectric and pyroelectric polymeric substrate was prepared. This thermally stable, piezoelectric and pyroelectric polymeric substrate may be used to prepare electromechanical transducers, thermomechanical transducers, accelerometers. acoustic sensors, infrared sensors, pressure sensors, vibration sensors, impact sensors, in-situ temperature sensors, in-situ stress/strain sensors, micro actuators, switches, adjustable fresnel lenses, speakers, tactile sensors. weather sensors, micro positioners, ultrasonic devices, power generators, tunable reflectors, microphones, and hydrophones. The process for preparing these polymeric substrates includes: providing a polymeric substrate having a softening temperature greater than 1000 C; depositing a metal electrode material onto the polymer film; attaching a plurality of electrical leads to the metal electrode coated polymeric substrate; heating the metal electrode coated polymeric substrate in a low dielectric medium; applying a voltage to the heated metal electrode coated polymeric substrate to induce polarization; and cooling the polarized metal electrode coated polymeric electrode while maintaining a constant voltage.

Method of Making Thermally Stable, Piezoelectric and Proelectric Polymeric Substrates

NASA Technical Reports Server (NTRS)

Simpson, Joycelyn O. (Inventor); St.Clair, Terry L. (Inventor)

1999-01-01

A thermally stable, piezoelectric and pyroelectric polymeric substrate was prepared. This thermally stable, piezoelectric and pyroelectric polymeric substrate may be used to prepare electromechanical transducers, thermomechanical transducers, accelerometers, acoustic sensors, infrared sensors, pressure sensors, vibration sensors, impact sensors. in-situ temperature sensors, in-situ stress/strain sensors, micro actuators, switches, adjustable fresnel lenses, speakers, tactile sensors, weather sensors, micro positioners, ultrasonic devices, power generators, tunable reflectors, microphones, and hydrophones. The process for preparing these polymeric substrates includes: providing a polymeric substrate having a softening temperature greater than 100 C; depositing a metal electrode material onto the polymer film; attaching a plurality of electrical leads to the metal electrode coated polymeric substrate; heating the metal electrode coated polymeric substrate in a low dielectric medium: applying a voltage to the heated metal electrode coated polymeric substrate to induce polarization; and cooling the polarized metal electrode coated polymeric electrode while maintaining a constant voltage.

Processing and properties of Pb(Mg(1/3)Nb(2/3))O3--PbTiO3 thin films by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Tantigate, C.; Lee, J.; Safari, A.

1995-03-01

The objectives of this study were to prepare in situ Pb(Mg(1/3)Nb(2/3))O3 (PMN) and PMN-PT thin films by pulsed laser deposition and to investigate the electrical features of thin films for possible dynamic random access memory (DRAM) and microactuator applications. The impact of processing parameters such compositions, substrate temperature, and oxygen pressure on perovskite phase formation and dielectric characteristics were reported. It was found that the highest dielectric constant, measured at room temperature and 10 kHz, was attained from the PMN with 99% perovskite.

Enhanced dielectric constant and fatigue-resistance of PbZr0.4Ti0.6O3 capacitor with magnetic intermetallic FePt top electrode

NASA Astrophysics Data System (ADS)

Liu, B. T.; Zhao, J. W.; Li, X. H.; Zhou, Y.; Bian, F.; Wang, X. Y.; Zhao, Q. X.; Wang, Y. L.; Guo, Q. L.; Wang, L. X.; Zhang, X. Y.

2010-06-01

Both FePt/PbZr0.4Ti0.6O3(PZT)/Pt and Pt/PZT/Pt ferroelectric capacitors have been fabricated on Si substrates. It is found that up to 109 switching cycles, the FePt/PZT/Pt capacitor, measured at 50 kHz, with polarization decreased by 57%, is superior to the Pt/PZT/Pt capacitor by 82%, indicating that an intermetallic FePt top electrode can also improve the fatigue-resistance of a PZT capacitor. Maximum dielectric constants are 980 and 770 for PZT capacitors with FePt and Pt, respectively. This is attributed to the interface effect between PZT film and the top electrode since the interfacial capacitance of FePt/PZT is 3.5 times as large as that of Pt/PZT interface.

Thickness and temperature dependent electrical characteristics of crystalline BaxSr1-xTiO3 thin films

NASA Astrophysics Data System (ADS)

Panda, B.; Roy, A.; Dhar, A.; Ray, S. K.

2007-03-01

Polycrystalline Ba1-xSrxTiO3 (BST) thin films with three different compositions have been deposited by radio-frequency magnetron sputtering technique on platinum coated silicon substrates. Samples with buffer and barrier layers for different film thicknesses and processing temperatures have been studied. Crystallite size of BST films has been found to increase with increasing substrate temperature. Thickness dependent dielectric constant has been studied and discussed in the light of an interfacial dead layer and the finite screening length of the electrode. Ferroelectric properties of the films have also been studied for various deposition conditions. The electrical resistivity of the films measured at different temperatures shows a positive temperature coefficient of resistance under a constant bias voltage.

Microstructure and dielectric properties of cellulose acetate-ZnO/ITO composite films based on water hyacinth

NASA Astrophysics Data System (ADS)

Diantoro, M.; Mustikasari, A. A.; Wijayanti, N.; Yogihati, C.; Taufiq, A.

2017-05-01

The electrical properties of Cellulose Acetate (CA), especially extracted from water hyacinth, is rarely informed. CA is generally more stable compared to its cellulose. It has a good potential for electronic application with specific modifications such as inducing metal oxide. A combination of intrinsic properties of Zinc Oxide (ZnO) and CA is expected as a great potential for electrical and optical applications. CA-ZnO/ITO composite film was investigated in relation with its structure, dielectric constant, and the effect of light intensity on their dielectric constant. CA-ZnO composite films were prepared with different mass of ZnO i.e. 0; 0,02; 0,04; 0,06 and 0,08 grams. CA-ZnO solution was synthesized via the mixing method with PEG:DMF solvents by using a magnetic hotplate stirrer with the rotation rate of 1500 rpm at 80°C. The CA-ZnO solution was then deposited onto ITO/glass substrate by using spin coating technique. The CA-ZnO/ITO films were annealed at 160°C to remove the remaining solvents. The effects of ZnO composition on the structure (crystallinity and morphology) and dielectric constant properties were investigated by using X-Ray Diffractometer, Scanning Electron Microscopy, Fourier Transform Infrared Spectroscopy, and LCR meter. It was shown that cellulose can be isolated from water hyacinth with the yield of 67,72 % by Chesson method and can further be transformed into CA. The X-ray diffraction pattern showed that there are 2 phases formed i.e. CA and ZnO. Furthermore, greater ZnO amount increased the crystallinity of composite films. The CA-ZnO films exhibit porous films with ZnO distributed on the CA surface films. Therefore, ZnO increases the dielectric constant of CA-ZnO composite films.

Process-structure-property relationships of micron thick gadolinium oxide films deposited by reactive electron beam-physical vapor deposition (EB-PVD)

NASA Astrophysics Data System (ADS)

Grave, Daniel A.

Gadolinium oxide (Gd2O3) is an attractive material for solid state neutron detection due to gadolinium's high thermal neutron capture cross section. Development of neutron detectors based on Gd2 O3 requires sufficiently thick films to ensure neutron absorption. In this dissertation work, the process-structure-property relationships of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) were studied. Through a systematic design of experiments, fundamental studies were conducted to determine the effects of processing conditions such as deposition temperature, oxygen flow rate, deposition rate, and substrate material on Gd2O3 film crystallographic phase, texture, morphology, grain size, density, and surface roughness. Films deposited at high rates (> 5 A/s) were examined via x-ray diffraction (XRD) and Raman spectroscopy. Quantitative phase volume calculations were performed via a Rietveld refinement technique. All films deposited at high rates were found to be fully monoclinic or mixed cubic/monoclinic phase. Generally, increased deposition temperature and increased oxygen flow resulted in increased cubic phase volume. As film thickness increased, monoclinic phase volume increased. Grazing incidence x-ray diffraction (GIXRD) depth profiling analysis showed that cubic phase was only present under large incidence angle (large penetration depth) measurements, and after a certain point, only monoclinic phase was grown. This was confirmed by transmission electron microscopy (TEM) analysis with selected area diffraction (SAD). Based on this information, a large compressive stress was hypothesized to cause the formation of the monoclinic phase and this hypothesis was confirmed by demonstrating the existence of a stress induced phase transition. An experiment was designed to introduce compressive stress into the Gd2O 3 films via ion beam assisted deposition (IBAD). This allowed for systematic increase in compressive stress while keeping a large adatom diffusion length on the film surface. Crystallographic texture evolution in the Gd2O3 films was investigated for different substrate types. At high rates, it was shown that films deposited on different substrates (quartz, silicon, sapphire, and GaN) all had similar theta-2theta diffraction patterns, suggesting that films grew similarly on different substrates due to the low adatom mobility. However, significant differences in texture were observed for films deposited at low rates (< 1 A/s) and high temperature (650°C) on different substrates. For evaluation of in-plane texture in the Gd2O 3 films, pole figure analysis was performed. Mixed phase films deposited at high rates and low temperature showed weak out-of-plane texture and random in-plane texture. Mixed phase films deposited at high temperatures possessed a fiber texture (strong out-of-plane texture), but lacked the necessary adatom mobility to develop in-plane texture. For single phase cubic films grown under low rates of deposition, out-of-plane texture was observed on quartz substrates. However, weak and strong in-plane textures were observed for sapphire and GaN substrates, respectively. The use of ion bombardment resulted in the formation of moderate biaxial texture for films grown on quartz. For films grown on sapphire, a very strong biaxial texture was achieved with ion bombardment which adds additional energy to the system. The effects of processing on the structure, composition, and interfacial chemistry of the Gd2O3 films were investigated. The results showed that films primarily adhered to the Structure-Zone models with a few exceptions. The deviation from the Structure-Zone model was explained by the combined effects of columnar growth, shadowing, and adatom mobility. At low deposition temperatures, decreasing oxygen flow resulted in increased film density due to higher adatom mobility. Films deposited at this temperature were characterized by small (10-15 nm) nanocrystalline grains with some porous disordered regions. The dielectric properties of Si(111)/Gd2O3/Ti/Au MOS capacitors were investigated. Moisture absorption in Gd2O 3 films was found to result in both increased dielectric loss (10x) and inflated dielectric constant values ( 40 %). Heat treatment of the films at 100 °C resulted in outgassing of moisture, reduction in dielectric constant, and excellent frequency dispersion of the dielectric constant over a range of 10 kHz-1 MHz. The effect of film processing on the dielectric constant was systematically investigated. Tuning of the dielectric constant from a value of 11 to a value of 24 was possible by manipulating the structure and crystallographic phase of the material via the processing conditions. Capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of GaN/AlGaN/Gd2O3/Ti/Au MOS capacitors were investigated. The effects of processing on fixed oxide charge, trapped oxide charge, and density of interface states were evaluated. Single phase cubic films deposited at low rates with near heteroepitaxial growth were shown to have the lowest density of trapped charge. (Abstract shortened by ProQuest.).

Processing of Al2O3/SrTiO3/PDMS Composites With Low Dielectric Loss

NASA Astrophysics Data System (ADS)

Yao, J. L.; Guo, M. J.; Qi, Y. B.; Zhu, H. X.; Yi, R. Y.; Gao, L.

2018-05-01

Polydimethylsiloxane (PDMS) is widely used in the electrical and electronic industries due to its excellent electrical insulation and biocompatible characteristics. However, the dielectric constant of pure PDMS is very low which restricts its applications. Herein, we report a series of PDMS/Al2O3/strontium titanate (ST) composites with high dielectric constant and low loss prepared by a simple experimental method. The composites exhibit high dielectric constant (relative dielectric constant is 4) after the composites are coated with insulated Al2O3 particles, and the dielectric constant gets further improved for composites with ST particles (dielectric constant reaches 15.5); a lower dielectric loss (tanδ= 0.05) is also found at the same time which makes co-filler composites suitable for electrical insulation products, and makes the experimental method more interesting in modern teaching.

47 CFR 73.184 - Groundwave field strength graphs.

Code of Federal Regulations, 2011 CFR

2011-10-01

... a dielectric constant of the ground (referred to air as unity) equal to 15 for land and 80 for sea..., Washington, DC 20554, (202) 632-7000. (c) Provided the value of the dielectric constant is near 15, the... dielectric constant, the following procedure may be used to determine the dielectric constant of the ground...

Application of the compensated Arrhenius formalism to explain the dielectric constant dependence of rates for Menschutkin reactions.

PubMed

Petrowsky, Matt; Glatzhofer, Daniel T; Frech, Roger

2013-11-21

The dependence of the reaction rate on solvent dielectric constant is examined for the reaction of trihexylamine with 1-bromohexane in a series of 2-ketones over the temperature range 25-80 °C. The rate constant data are analyzed using the compensated Arrhenius formalism (CAF), where the rate constant assumes an Arrhenius-like equation that also contains a dielectric constant dependence in the exponential prefactor. The CAF activation energies are substantially higher than those obtained using the simple Arrhenius equation. A master curve of the data is observed by plotting the prefactors against the solvent dielectric constant. The master curve shows that the reaction rate has a weak dependence on dielectric constant for values approximately less than 10 and increases more rapidly for dielectric constant values greater than 10.

Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

NASA Astrophysics Data System (ADS)

Biagioni, P.; Sakat, E.; Baldassarre, L.; Calandrini, E.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Isella, G.; Paul, D. J.; Ortolani, M.

2015-03-01

We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

Strip dielectric wave guide antenna-for the measurement of dielectric constant of low-loss materials

NASA Astrophysics Data System (ADS)

Rastogi, Alok Kumar; Tiwari, A. K.; Shrivastava, R. P.

1993-07-01

The value of dielectric constant are the most important parameters in material science technology. In micro-wave and millimeter wave circuits using dielectric materials the values of this parameters should be known accurately. It is observed that the number of methods are reported in litrature, however these methods impose difficulties in experimentation and are not very accurate. In this paper a novel approach to the measurement of the dielectric constant of low loss materials at micro-wave and millimeter wave frequencies has been discussed. In this method by using antenna theory, a metallic strip dielectric guide is taken in to constideration and band reject phenomenon of dielectric antenna is used. Frequency response of an antenna in band reject mode is a function of the dimensional parameters, such as the metallic strip period, the profile of the metallic strip and the dielectric constant of the material used. Hence if one measure the frequency responce of the antenna in band reject mode, the dielectric constant of the material is determined provided all other parameters are known. This method gives a direct measure of dielectric constant and is quite accurate as computer techniques are used for evaluating the dielectric constant. This method verified experimentally also.

Method of forming a multiple layer dielectric and a hot film sensor therewith

NASA Technical Reports Server (NTRS)

Hopson, Purnell, Jr. (Inventor); Tran, Sang Q. (Inventor)

1990-01-01

The invention is a method of forming a multiple layer dielectric for use in a hot-film laminar separation sensor. The multiple layer dielectric substrate is formed by depositing a first layer of a thermoelastic polymer such as on an electrically conductive substrate such as the metal surface of a model to be tested under cryogenic conditions and high Reynolds numbers. Next, a second dielectric layer of fused silica is formed on the first dielectric layer of thermoplastic polymer. A resistive metal film is deposited on selected areas of the multiple layer dielectric substrate to form one or more hot-film sensor elements to which aluminum electrical circuits deposited upon the multiple layered dielectric substrate are connected.

Tunable surface plasmon devices

DOEpatents

Shaner, Eric A [Rio Rancho, NM; Wasserman, Daniel [Lowell, MA

2011-08-30

A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

Method of fabricating reflection-mode EUV diffusers

DOEpatents

Anderson, Erik; Naulleau, Patrick P.

2005-03-01

Techniques for fabricating well-controlled, random relief, engineered surfaces that serve as substrates for EUV optical devices are accomplished with grayscale exposure. The method of fabricating a multilevel EUV optical element includes: (a) providing a substrate; (b) depositing a layer of curable material on a surface of the substrate; (c) creating a relief profile in a layer of cured material from the layer of curable material wherein the relief profile comprises multiple levels of cured material that has a defined contour; and (d) depositing a multilayer reflection film over the relief profile wherein the film has an outer contour that substantially matches that of the relief profile. The curable material can comprise photoresist or a low dielectric constant material.

Compact Radiative Control Structures for Millimeter Astronomy

NASA Technical Reports Server (NTRS)

Brown, Ari D.; Chuss, David T.; Chervenak, James A.; Henry, Ross M.; Moseley, s. Harvey; Wollack, Edward J.

2010-01-01

We have designed, fabricated, and tested compact radiative control structures, including antireflection coatings and resonant absorbers, for millimeter through submillimeter wave astronomy. The antireflection coatings consist of micromachined single crystal silicon dielectric sub-wavelength honeycombs. The effective dielectric constant of the structures is set by the honeycomb cell geometry. The resonant absorbers consist of pieces of solid single crystal silicon substrate and thin phosphorus implanted regions whose sheet resistance is tailored to maximize absorption by the structure. We present an implantation model that can be used to predict the ion energy and dose required for obtaining a target implant layer sheet resistance. A neutral density filter, a hybrid of a silicon dielectric honeycomb with an implanted region, has also been fabricated with this basic approach. These radiative control structures are scalable and compatible for use large focal plane detector arrays.

Evidence for power-law frequency dependence of intrinsic dielectric response in the Ca Cu3 Ti4 O12

NASA Astrophysics Data System (ADS)

Tselev, Alexander; Brooks, Charles M.; Anlage, Steven M.; Zheng, Haimei; Salamanca-Riba, Lourdes; Ramesh, R.; Subramanian, M. A.

2004-10-01

We investigated the dielectric response of CaCu3Ti4O12 (CCTO) thin films grown epitaxially on LaAlO3 (001) substrates by pulsed laser deposition. The dielectric response of the films was found to be strongly dominated by a power law in frequency, typical of materials with localized hopping charge carriers, in contrast to the Debye-like response of the bulk material. The film conductivity decreases with annealing in oxygen, and it suggests that oxygen deficit is a cause of the relatively high film conductivity. With increase of the oxygen content, the room temperature frequency response of the CCTO thin films changes from the response indicating the presence of some relatively low conducting capacitive layers to purely power law, and then toward a frequency independent response with a relative dielectric constant ɛ'˜102 . The film conductance and dielectric response decrease upon decrease of the temperature, with dielectric response being dominated by the power-law frequency dependence. Below ˜80K , the dielectric response of the films is frequency independent with ɛ' close to 102 . The results provide another piece of evidence for an extrinsic, Maxwell-Wagner type, origin of the colossal dielectric response of the bulk CCTO material, connected with electrical inhomogeneity of the bulk material.

Electrical properties of spin coated ultrathin titanium oxide films on GaAs

NASA Astrophysics Data System (ADS)

Dutta, Shankar; Pal, Ramjay; Chatterjee, Ratnamala

2015-04-01

In recent years, ultrathin (<50 nm) metal oxide films have been being extensively studied as high-k dielectrics for future metal oxide semiconductor (MOS) technology. This paper discusses deposition of ultrathin TiO2 films (˜10 nm) on GaAs substrates (one sulfur-passivated, another unpassivated) by spin coating technique. The sulfur passivation is done to reduce the surface states of GaAs substrate. After annealing at 400 °C in a nitrogen environment, the TiO2 films are found to be polycrystalline in nature with rutile phase. The TiO2 films exhibit consistent grain size of 10-20 nm with thickness around 10-12 nm. Dielectric constants of the films are found to be 65.4 and 47.1 corresponding to S-passivated and unpassivated substrates, respectively. Corresponding threshold voltages of the MOS structures are measured to be -0.1 V to -0.3 V for the S-passivated and unpassivated samples, respectively. The S-passivated TiO2 film showed improved (lower) leakage current density (5.3 × 10-4 A cm-2 at 3 V) compared to the unpassivated film (1.8 × 10-3 A/cm2 at 3 V). Dielectric breakdown-field of the TiO2 films on S-passivated and unpassivated GaAs samples are found to be 8.4 MV cm-1 and 7.2 MV cm-1 respectively.

Waveguide apparatuses and methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spencer, James E.

2016-05-10

Optical fiber waveguides and related approaches are implemented to facilitate communication. As may be implemented in accordance with one or more embodiments, a waveguide has a substrate including a lattice structure having a plurality of lattice regions with a dielectric constant that is different than that of the substrate, a defect in the lattice, and one or more deviations from the lattice. The defect acts with trapped transverse modes (e.g., magnetic and/or electric modes) and facilitates wave propagation along a longitudinal direction while confining the wave transversely. The deviation(s) from the lattice produces additional modes and/or coupling effects.

Multifunctional graded dielectrics fabricated using dry powder printing

NASA Astrophysics Data System (ADS)

Good, Austin J.; Roper, David; Good, Brandon; Yarlagadda, Shridhar; Mirotznik, Mark S.

2017-09-01

The ability to fabricate multifunctional devices that combine good structural properties with embedded electromagnetic functionality has many practical applications, including antireflective surfaces for structural radomes, load bearing conformal antennas, integrated RF transmission lines and passive beam forming networks. We describe here a custom made 3D printer that can print high dielectric constant ceramic powders within a low-loss structural composite substrate to produce mechanically robust parts with integrated graded dielectric properties. We fabricated a number of these parts and evaluated their anisotropic dielectric properties by determining the complete permittivity tensor of the printed samples as a function of local powder weight. This data was then experimentally validated using two practical examples: a Chebyshev antireflective stack and a 2D passive beamsteering network. The results of both electromagnetic systems displayed acceptable agreement between the simulated and measured results. This agreement shows that powder printing is a potential approach for fabricating spatially graded dielectric electromagnetic systems. This paper was submitted for review on 15 February 2017. The project is funded by the Office of Naval Research, Code 331.

Investigation of Fumed Silica/Aqueous NaCl Superdielectric Material.

PubMed

Jenkins, Natalie; Petty, Clayton; Phillips, Jonathan

2016-02-20

A constant current charge/discharge protocol which showed fumed silica filled to the point of incipient wetness with aqueous NaCl solution to have dielectric constants >10⁸ over the full range of dielectric thicknesses of 0.38-3.9 mm and discharge times of 0.25->100 s was studied, making this material another example of a superdielectric. The dielectric constant was impacted by both frequency and thickness. For time to discharge greater than 10 s the dielectric constant for all thicknesses needed to be fairly constant, always >10⁸, although trending higher with increasing thickness. At shorter discharge times the dielectric constant consistently decreased, with decreasing time to discharge. Hence, it is reasonable to suggest that for time to discharge >10 s the dielectric constant at all thicknesses will be greater than 10⁸. This in turn implies an energy density for a 5 micron thick dielectric layer in the order of 350 J/cm³ for discharge times greater than 10 s.

Investigation of Fumed Silica/Aqueous NaCl Superdielectric Material

PubMed Central

Jenkins, Natalie; Petty, Clayton; Phillips, Jonathan

2016-01-01

A constant current charge/discharge protocol which showed fumed silica filled to the point of incipient wetness with aqueous NaCl solution to have dielectric constants >108 over the full range of dielectric thicknesses of 0.38–3.9 mm and discharge times of 0.25–>100 s was studied, making this material another example of a superdielectric. The dielectric constant was impacted by both frequency and thickness. For time to discharge greater than 10 s the dielectric constant for all thicknesses needed to be fairly constant, always >109, although trending higher with increasing thickness. At shorter discharge times the dielectric constant consistently decreased, with decreasing time to discharge. Hence, it is reasonable to suggest that for time to discharge >10 s the dielectric constant at all thicknesses will be greater than 109. This in turn implies an energy density for a 5 micron thick dielectric layer in the order of 350 J/cm3 for discharge times greater than 10 s. PMID:28787918

Preparation and Characterization of Flexible Substrate Material from Phenyl-Thiophene-2-Carbaldehyde Compound.

PubMed

Rahman, Ashiqur; Islam, Mohammad Tariqul; Samsuzzaman, Md; Singh, Mandeep Jit; Akhtaruzzaman, Md

2016-05-11

In this paper, a novel phenyl-thiophene-2-carbaldehyde compound-based flexible substrate material has been presented. Optical and microwave characterization of the proposed material are done to confirm the applicability of the proposed material as a substrate. The results obtained in this work show that the phenyl-thiophene-2-carbaldehyde consists of a dielectric constant of 3.03, loss tangent of 0.003, and an optical bandgap of 3.24 eV. The proposed material is analyzed using commercially available EM simulation software and validated by the experimental analysis of the flexible substrate. The fabricated substrate also shows significant mechanical flexibility and light weight. The radiating copper patch deposited on the proposed material substrate incorporated with partial ground plane and microstrip feeding technique shows an effective impedance bandwidth of 3.8 GHz. It also confirms an averaged radiation efficiency of 81% throughout the frequency band of 5.4-9.2 GHz.

Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

NASA Astrophysics Data System (ADS)

Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

2010-03-01

This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100° C, 1300° C and 1500° C for about 20 hours using heating and cooling rates of 2° C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

Influence of dielectric substrate on the responsivity of microstrip dipole-antenna-coupled infrared microbolometers.

PubMed

Codreanu, Iulian; Boreman, Glenn D

2002-04-01

We report on the influence of the dielectric substrate on the performance of microstrip dipole-antenna-coupled microbolometers. The location, the width, and the magnitude of the resonance of a printed dipole are altered when the dielectric substrate is backed by a ground plane. A thicker dielectric substrate shifts the antenna resonance toward shorter dipole lengths and leads to a stronger and slower detector response. The incorporation of an air layer into the antenna substrate further increases thermal impedance, leading to an even stronger response and shifting the antenna resonance toward longer dipole lengths.

Influence of SiO2 Addition on Properties of PTFE/TiO2 Microwave Composites

NASA Astrophysics Data System (ADS)

Yuan, Ying; Wang, Jie; Yao, Minghao; Tang, Bin; Li, Enzhu; Zhang, Shuren

2018-01-01

Composite substrates for microwave circuit applications have been fabricated by filling polytetrafluoroethylene (PTFE) polymer matrix with ceramic powder consisting of rutile TiO2 ( D 50 ≈ 5 μm) partially substituted with fused amorphous SiO2 ( D 50 ≈ 8 μm) with composition x vol.% SiO2 + (50 - x) vol.% TiO2 ( x = 0, 3, 6, 9, 12), and the effects of SiO2 addition on characteristics such as the density, moisture absorption, microwave dielectric properties, and thermal properties systematically investigated. The results show that the filler was well distributed throughout the matrix. High dielectric constant ( ɛ r > 7.19) and extremely low moisture absorption (<0.02%) were obtained, resulting from the relatively high density of the composites. The ceramic particles served as barriers and improved the thermal stability of the PTFE polymer, retarding its decomposition. The temperature coefficient of dielectric constant ( τ ɛ ) of the composites shifted toward the positive direction (from - 309 ppm/°C to - 179 ppm/°C) as the SiO2 content was increased, while the coefficient of thermal expansion remained almost unchanged (˜ 35 ppm/°C).

Optimized dielectric properties of SrTiO3:Nb /SrTiO3 (001) films for high field effect charge densities

NASA Astrophysics Data System (ADS)

Cai, Xiuyu; Frisbie, C. Daniel; Leighton, C.

2006-12-01

The authors report the growth, structural and electrical characterizations of SrTiO3 films deposited on conductive SrTiO3:Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ˜200 (for a thickness of 1150Å). The breakdown fields in SrTiO3:Nb /SrTiO3/Ag capacitors are consistent with induced charge densities >1×1014cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

Role of dielectric constant in electrohydrodynamics of conducting fluids

NASA Technical Reports Server (NTRS)

Rhodes, Percy H.; Snyder, Robert S.; Roberts, Glyn O.

1992-01-01

Electrohydrodynamic (EHD) flows are driven by the interaction of an electric field with variations in electric conductivity or dielectric constant. In reported EHD experiments on the deformation of drops of immiscible dielectric fluids, the role of conductivity has tended to overshadow the role of dielectric constant. Often, large conductivity contrasts were convenient because the conductivities of the dielectric fluid were relatively uncertain. As a result, the observed effects were always qualitatively the same as if there had been no contrast in dielectric constant. Our early experiments studying the EHC deformations of cylindrical streams readily showed the conductivity effect but the dielectric constant effect was not discernible. We have modified our flow chamber and improved our method of observation and can now see an unequivocal dielectric constant effect which is in agreement with the prior theory. In this paper we first give a brief description of the physics of charge buildup at the interface of an immersed spherical drop or flowing cylindrical sample stream and then show how these charge distributions lead to interface distortions and accompanying viscous flows which constitute EHD. We next review theory and experiment describing the deformation of spherical drops. We show that in the reported drop deformation experiments, the contrast in dielectric constant was never sufficient to reverse the deformation due to the conductivity contrast. We review our work describing the deformation of a cylindrical stream of one fluid flowing in a parallel flow of another, and we compare the deformation equations with those for spherical drops. Finally, we show a definite experimental dielectric constant effect for cylindrical stream of aqueous polystyrene latex suspension. The dielectric constant varies with the frequency of the imposed electric field, and the associated EHD flow change is very apparent.

Capacitive Cells for Dielectric Constant Measurement

ERIC Educational Resources Information Center

Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco

2015-01-01

A simple capacitive cell for dielectric constant measurement in liquids is presented. As an illustrative application, the cell is used for measuring the degradation of overheated edible oil through the evaluation of their dielectric constant.

Can the Dielectric Constant of Fullerene Derivatives Be Enhanced by Side-Chain Manipulation? A Predictive First-Principles Computational Study.

PubMed

Sami, Selim; Haase, Pi A B; Alessandri, Riccardo; Broer, Ria; Havenith, Remco W A

2018-04-19

The low efficiency of organic photovoltaic (OPV) devices has often been attributed to the strong Coulombic interactions between the electron and hole, impeding the charge separation process. Recently, it has been argued that by increasing the dielectric constant of materials used in OPVs, this strong interaction could be screened. In this work, we report the application of periodic density functional theory together with the coupled perturbed Kohn-Sham method to calculate the electronic contribution to the dielectric constant for fullerene C 60 derivatives, a ubiquitous class of molecules in the field of OPVs. The results show good agreement with experimental data when available and also reveal an important undesirable outcome when manipulating the side chain to maximize the static dielectric constant: in all cases, the electronic contribution to the dielectric constant decreases as the side chain increases in size. This information should encourage both theoreticians and experimentalists to further investigate the relevance of contributions to the dielectric constant from slower processes like vibrations and dipolar reorientations for facilitating the charge separation, because electronically, enlarging the side chain of conventional fullerene derivatives only lowers the dielectric constant, and consequently, their electronic dielectric constant is upper bound by the one of C 60 .

Can the Dielectric Constant of Fullerene Derivatives Be Enhanced by Side-Chain Manipulation? A Predictive First-Principles Computational Study

PubMed Central

2018-01-01

The low efficiency of organic photovoltaic (OPV) devices has often been attributed to the strong Coulombic interactions between the electron and hole, impeding the charge separation process. Recently, it has been argued that by increasing the dielectric constant of materials used in OPVs, this strong interaction could be screened. In this work, we report the application of periodic density functional theory together with the coupled perturbed Kohn–Sham method to calculate the electronic contribution to the dielectric constant for fullerene C60 derivatives, a ubiquitous class of molecules in the field of OPVs. The results show good agreement with experimental data when available and also reveal an important undesirable outcome when manipulating the side chain to maximize the static dielectric constant: in all cases, the electronic contribution to the dielectric constant decreases as the side chain increases in size. This information should encourage both theoreticians and experimentalists to further investigate the relevance of contributions to the dielectric constant from slower processes like vibrations and dipolar reorientations for facilitating the charge separation, because electronically, enlarging the side chain of conventional fullerene derivatives only lowers the dielectric constant, and consequently, their electronic dielectric constant is upper bound by the one of C60. PMID:29561616

Negative Dielectric Constant Material Based on Ion Conducting Materials

NASA Technical Reports Server (NTRS)

Gordon, Keith L. (Inventor); Kang, Jin Ho (Inventor); Park, Cheol (Inventor); Lillehei, Peter T. (Inventor); Harrison, Joycelyn S. (Inventor)

2017-01-01

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly (benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Negative Dielectric Constant Material Based on Ion Conducting Materials

NASA Technical Reports Server (NTRS)

Gordon, Keith L. (Inventor); Kang, Jin Ho (Inventor); Harrison, Joycelyn S. (Inventor); Park, Cheol (Inventor); Lillehei, Peter T. (Inventor)

2014-01-01

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly(benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Thermal Conductivity Measurement of Low-k Dielectric Films: Effect of Porosity and Density

NASA Astrophysics Data System (ADS)

Alam, M. T.; Pulavarthy, R. A.; Bielefeld, J.; King, S. W.; Haque, M. A.

2014-03-01

The thermal conductivity of low-dielectric-constant (low-k) SiOC:H and SiC:H thin films has been measured as a function of porosity using a heat transfer model based on a microfin geometry and infrared thermometry. Microscale specimens were patterned from blanket films, released from the substrate, and subsequently integrated with the experimental setup. Results show that the thermal conductivity of a dense specimen, 0.7 W/mK, can be reduced to as low as 0.1 W/mK by introducing 30% porosity into it. The measured thermal conductivity shows a nonlinear decrease with increasing porosity that approximately follows the porosity-weighted simple medium model for porous materials. Neither the differential effective medium nor the coherent potential model could predict the density dependence of the thermal conductivity. These results suggest that more careful consideration is required for application of generic porous materials modeling to low-k dielectrics.

An ultrathin wide-band planar metamaterial absorber based on a fractal frequency selective surface and resistive film

NASA Astrophysics Data System (ADS)

Fan, Yue-Nong; Cheng, Yong-Zhi; Nie, Yan; Wang, Xian; Gong, Rong-Zhou

2013-06-01

We propose an ultrathin wide-band metamaterial absorber (MA) based on a Minkowski (MIK) fractal frequency selective surface and resistive film. This absorber consists of a periodic arrangement of dielectric substrates sandwiched with an MIK fractal loop structure electric resonator and a resistive film. The finite element method is used to simulate and analyze the absorption of the MA. Compared with the MA-backed copper film, the designed MA-backed resistive film exhibits an absorption of 90% at a frequency region of 2 GHz-20 GHz. The power loss density distribution of the MA is further illustrated to explain the mechanism of the proposed MA. Simulated absorptions at different incidence cases indicate that this absorber is polarization-insensitive and wide-angled. Finally, further simulated results indicate that the surface resistance of the resistive film and the dielectric constant of the substrate can affect the absorbing property of the MA. This absorber may be used in many military fields.

Tunable metamaterial dual-band terahertz absorber

NASA Astrophysics Data System (ADS)

Luo, C. Y.; Li, Z. Z.; Guo, Z. H.; Yue, J.; Luo, Q.; Yao, G.; Ji, J.; Rao, Y. K.; Li, R. K.; Li, D.; Wang, H. X.; Yao, J. Q.; Ling, F. R.

2015-11-01

We report a design of a temperature controlled tunable dual band terahertz absorber. The compact single unit cell consists of two nested closed square ring resonators and a layer metallic separated by a substrate strontium titanate (STO) dielectric layer. It is found that the absorber has two distinctive absorption peaks at frequencies 0.096 THz and 0.137 THz, whose peaks are attained 97% and 75%. Cooling the absorber from 400 K to 250 K causes about 25% and 27% shift compared to the resonance frequency of room temperature, when we cooling the temperature to 150 K, we could attained both the two tunabilities exceeding 53%. The frequency tunability is owing to the variation of the dielectric constant of the low-temperature co-fired ceramic (LTCC) substrate. The mechanism of the dual band absorber is attributed to the overlapping of dual resonance frequencies, and could be demonstrated by the distributions of the electric field. The method opens up avenues for designing tunable terahertz devices in detection, imaging, and stealth technology.

Optical, electrical and dielectric properties of TiO2-SiO2 films prepared by a cost effective sol-gel process.

PubMed

Vishwas, M; Rao, K Narasimha; Gowda, K V Arjuna; Chakradhar, R P S

2011-12-01

Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (100) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200°C for their possible use in optoelectronic applications. Copyright © 2011 Elsevier B.V. All rights reserved.

Microstrip antenna study for Pioneer Saturn/Uranus atmosphere entry probe

NASA Technical Reports Server (NTRS)

Kuhlman, E. A.

1974-01-01

The design parameters of a microstrip antenna were studied to determine its performance characteristics as affected by an atmospheric entry probe environment. The technical literature was reviewed to identify the known design and performance characteristics. These data were used to evaluate the expected effects of mission environments on the microstrip antenna design proposed for the Saturn/Uranus Atmospheric Entry Probe (SAEP). Radiation patterns and VSWR measurements were made to evaluate the performance in the SAEP thermal environment. Results of the literature search and pattern tests confirm that the microstrip antenna is a good choice as a transmitting antenna on the SAEP. The microstrip antenna is efficient, compact, and well suited to a space environment. The pattern can be controlled with a minimum beamwidth of 60 degrees (air substrate; e.g., honeycomb structure) and a maximum on the order of 100 degrees with higher dielectric constant substrates. The power handling capacity is good and can be improved by covering the antenna with a dielectric cover.

Microscopic theoretical study of frequency dependent dielectric constant of heavy fermion systems

NASA Astrophysics Data System (ADS)

Shadangi, Keshab Chandra; Rout, G. C.

2017-05-01

The dielectric polarization and the dielectric constant plays a vital role in the deciding the properties of the Heavy Fermion Systems. In the present communication we consider the periodic Anderson's Model which consists of conduction electron kinetic energy, localized f-electron kinetic energy and the hybridization between the conduction and localized electrons, besides the Coulomb correlation energy. We calculate dielectric polarization which involves two particle Green's functions which are calculated by using Zubarev's Green's function technique. Using the equations of motion of the fermion electron operators. Finally, the temperature and frequency dependent dielectric constant is calculated from the dielectric polarization function. The charge susceptibility and dielectric constant are computed numerically for different physical parameters like the position (Ef) of the f-electron level with respect to fermi level, the strength of the hybridization (V) between the conduction and localized f-electrons, Coulomb correlation potential temperature and optical phonon wave vector (q). The results will be discussed in a reference to the experimental observations of the dielectric constants.

Thick adherent dielectric films on plastic substrates and method for depositing same

DOEpatents

Wickboldt, Paul; Ellingboe, Albert R.; Theiss, Steven D.; Smith, Patrick M.

2002-01-01

Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 .mu.m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N.sub.2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 .mu.m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.

Exploratory studies of new avenues to achieve high electromechanical response and high dielectric constant in polymeric materials

NASA Astrophysics Data System (ADS)

Huang, Cheng

High performance soft electronic materials are key elements in advanced electronic devices for broad range applications including capacitors, actuators, artificial muscles and organs, smart materials and structures, microelectromechanical (MEMS) and microfluidic devices, acoustic devices and sensors. This thesis exploits new approaches to improve the electromechanical response and dielectric response of these materials. By making use of novel material phenomena such as large anisotropy in dipolar response in liquid crystals (LCs) and all-organic composites in which high dielectric constant organic solids and conductive polymers are either physically blended into or chemically grafted to a polymer matrix, we demonstrate that high dielectric constant and high electromechanical conversion efficiency comparable to that in ceramic materials can be achieved. Nano-composite approach can also be utilized to improve the performance of the electronic electroactive polymers (EAPs) and composites, for example, exchange coupling between the fillers and matrix with very large dielectric contrast can lead to significantly enhance the dielectric response as well as electromechanical response when the heterogeneity size of the composite is comparable to the exchange length. In addition to the dielectric composites, in which high dielectric constant fillers raise the dielectric constant of composites, conductive percolation can also lead to high dielectric constant in polymeric materials. An all-polymer percolative composite is introduced which exhibits very high dielectric constant (>7,000). The flexible all-polymer composites with a high dielectric constant make it possible to induce a high electromechanical response under a much reduced electric field in the field effect electroactive polymer (EAP) actuators (a strain of 2.65% with an elastic energy density of 0.18 J/cm3 can be achieved under a field of 16 V/mum). Agglomeration of the particles can also be effectively prevented by in situ preparation. High dielectric constant copper phthalocyanine oligomer and conductive polyaniline oligomer were successfully bonded to polyurethane backbone to form fully functionalized nano-phase polymers. Improvement of dispersibility of oligomers in polymer matrix makes the system self-organize the nanocomposites possessing oligomer nanophase (below 30nm) within the fully functionalized polymers. The resulting nanophase polymers significantly enhance the interface effect, which through the exchange coupling raises the dielectric response markedly above that expected from simple mixing rules for dielectric composites. Consequently, these nano-phase polymers offer a high dielectric constant (a dielectric constant near 1,000 at 20 Hz), improve the breakdown field and mechanical properties, and exhibit high electromechanical response. A longitudinal strain of more than -14% can be induced under a much reduced field, 23 V/mum, with an elastic energy density of higher than 1 J/cm3. The elastic modulus is as high as 100MPa, and a transverse strain is 7% under the same field. (Abstract shortened by UMI.)

A system for measuring complex dielectric properties of thin films at submillimeter wavelengths using an open hemispherical cavity and a vector network analyzer.

PubMed

Rahman, Rezwanur; Taylor, P C; Scales, John A

2013-08-01

Quasi-optical (QO) methods of dielectric spectroscopy are well established in the millimeter and submillimeter frequency bands. These methods exploit standing wave structure in the sample produced by a transmitted Gaussian beam to achieve accurate, low-noise measurement of the complex permittivity of the sample [e.g., J. A. Scales and M. Batzle, Appl. Phys. Lett. 88, 062906 (2006); R. N. Clarke and C. B. Rosenberg, J. Phys. E 15, 9 (1982); T. M. Hirovnen, P. Vainikainen, A. Lozowski, and A. V. Raisanen, IEEE Trans. Instrum. Meas. 45, 780 (1996)]. In effect the sample itself becomes a low-Q cavity. On the other hand, for optically thin samples (films of thickness much less than a wavelength) or extremely low loss samples (loss tangents below 10(-5)) the QO approach tends to break down due to loss of signal. In such a case it is useful to put the sample in a high-Q cavity and measure the perturbation of the cavity modes. Provided that the average mode frequency divided by the shift in mode frequency is less than the Q (quality factor) of the mode, then the perturbation should be resolvable. Cavity perturbation techniques are not new, but there are technological difficulties in working in the millimeter/submillimeter wave region. In this paper we will show applications of cavity perturbation to the dielectric characterization of semi-conductor thin films of the type used in the manufacture of photovoltaics in the 100 and 350 GHz range. We measured the complex optical constants of hot-wire chemical deposition grown 1-μm thick amorphous silicon (a-Si:H) film on borosilicate glass substrate. The real part of the refractive index and dielectric constant of the glass-substrate varies from frequency-independent to linearly frequency-dependent. We also see power-law behavior of the frequency-dependent optical conductivity from 316 GHz (9.48 cm(-1)) down to 104 GHz (3.12 cm(-1)).

Method for fabrication of crack-free ceramic dielectric films

DOEpatents

Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan

2016-05-31

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

Method for fabrication of crack-free ceramic dielectric films

DOEpatents

Ma, Beihai; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan; Narayanan, Manoj

2014-02-11

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

Application of dielectric constant measurement in microwave sludge disintegration and wastewater purification processes.

PubMed

Kovács, Petra Veszelovszki; Lemmer, Balázs; Keszthelyi-Szabó, Gábor; Hodúr, Cecilia; Beszédes, Sándor

2018-05-01

It has been numerously verified that microwave radiation could be advantageous as a pre-treatment for enhanced disintegration of sludge. Very few data related to the dielectric parameters of wastewater of different origins are available; therefore, the objective of our work was to measure the dielectric constant of municipal and meat industrial wastewater during a continuous flow operating microwave process. Determination of the dielectric constant and its change during wastewater and sludge processing make it possible to decide on the applicability of dielectric measurements for detecting the organic matter removal efficiency of wastewater purification process or disintegration degree of sludge. With the measurement of dielectric constant as a function of temperature, total solids (TS) content and microwave specific process parameters regression models were developed. Our results verified that in the case of municipal wastewater sludge, the TS content has a significant effect on the dielectric constant and disintegration degree (DD), as does the temperature. The dielectric constant has a decreasing tendency with increasing temperature for wastewater sludge of low TS content, but an adverse effect was found for samples with high TS and organic matter contents. DD of meat processing wastewater sludge was influenced significantly by the volumetric flow rate and power level, as process parameters of continuously flow microwave pre-treatments. It can be concluded that the disintegration process of food industry sludge can be detected by dielectric constant measurements. From technical purposes the applicability of dielectric measurements was tested in the purification process of municipal wastewater, as well. Determination of dielectric behaviour was a sensitive method to detect the purification degree of municipal wastewater.

Mechanistic study of plasma damage to porous low-k: Process development and dielectric recovery

NASA Astrophysics Data System (ADS)

Shi, Hualiang

Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k interconnect. However, during the O2 plasma ashing process, the porous low-k dielectrics tend to degrade due to methyl depletion, moisture uptake, and densification, increasing the dielectric constant and leakage current. This dissertation presents a study of the mechanisms of plasma damage and dielectric recovery. The kinetics of plasma interaction with low-k dielectrics was investigated both experimentally and theoretically. By using a gap structure, the roles of ion, photon, and radical in producing damage on low-k dielectrics were differentiated. Oxidative plasma induced damage was proportional to the oxygen radical density, enhanced by VUV photon, and increased with substrate temperature. Ion bombardment induced surface densification, blocking radical diffusion. Two analytical models were derived to quantify the plasma damage. Based on the radical diffusion, reaction, and recombination inside porous low-k dielectrics, a plasma altered layer model was derived to interpret the chemical effect in the low ion energy region. It predicted that oxidative plasma induced damage can be reduced by decreasing pore radius, substrate temperature, and oxygen radical density and increasing carbon concentration and surface recombination rate inside low-k dielectrics. The model validity was verified by experiments and Monte-Carlo simulations. This model was also extended to the patterned low-k structure. Based on the ion collision cascade process, a sputtering yield model was introduced to interpret the physical effect in the high ion energy region. The model validity was verified by checking the ion angular and energy dependences of sputtering yield using O2/He/Ar plasma, low-k dielectrics with different k values, and a Faraday cage. Low-k dielectrics and plasma process were optimized to reduce plasma damage, including increasing carbon concentration in low-k dielectrics, switching plasma generator from ICP to RIE, increasing hard mask thickness, replacing O2 by CO2 plasma, increasing CO addition in CO/O 2 plasma, and increasing N2 addition in CO2/N 2 plasma. By combining analytical techniques with the Kramers-Kronig dispersion relation and quantum chemistry calculation, the origin of dielectric loss was ascribed to the physisorbed water molecules. Post-ash CH4 plasma treatment, vapor silylation process, and UV radiation were developed to repair plasma damage.

An equivalent method of mixed dielectric constant in passive microwave/millimeter radiometric measurement

NASA Astrophysics Data System (ADS)

Su, Jinlong; Tian, Yan; Hu, Fei; Gui, Liangqi; Cheng, Yayun; Peng, Xiaohui

2017-10-01

Dielectric constant is an important role to describe the properties of matter. This paper proposes This paper proposes the concept of mixed dielectric constant(MDC) in passive microwave radiometric measurement. In addition, a MDC inversion method is come up, Ratio of Angle-Polarization Difference(RAPD) is utilized in this method. The MDC of several materials are investigated using RAPD. Brightness temperatures(TBs) which calculated by MDC and original dielectric constant are compared. Random errors are added to the simulation to test the robustness of the algorithm. Keywords: Passive detection, microwave/millimeter, radiometric measurement, ratio of angle-polarization difference (RAPD), mixed dielectric constant (MDC), brightness temperatures, remote sensing, target recognition.

Nano-scale zirconia and hafnia dielectrics grown by atomic layer deposition: Crystallinity, interface structures and electrical properties

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub

With the continued scaling of transistors, leakage current densities across the SiO2 gate dielectric have increased enormously through direct tunneling. Presently, metal oxides having higher dielectric constants than SiO2 are being investigated to reduce the leakage current by increasing the physical thickness of the dielectric. Many possible techniques exist for depositing high-kappa gate dielectrics. Atomic layer deposition (ALD) has drawn attention as a method for preparing ultrathin metal oxide layers with excellent electrical characteristics and near-perfect film conformality due to the layer-by-layer nature of the deposition mechanism. For this research, an ALD system using ZrCl4/HfCl4 and H2O was built and optimized. The microstructural and electrical properties of ALD-ZrO2 and HfO2 grown on SiO2/Si substrates were investigated and compared using various characterization tools. In particular, the crystallization kinetics of amorphous ALD-HfO2 films were studied using in-situ annealing experiments in a TEM. The effect of crystallization on the electrical properties of ALD-HfO 2 was also investigated using various in-situ and ex-situ post-deposition anneals. Our results revealed that crystallization had little effect on the magnitude of the gate leakage current or on the conduction mechanisms. Building upon the results for each metal oxide separately, more advanced investigations were made. Several nanolaminate structures using ZrO2 and HfO2 with different sequences and layer thicknesses were characterized. The effects of the starting microstructure on the microstructural evolution of nanolaminate stacks were studied. Additionally, a promising new approach for engineering the thickness of the SiO2-based interface layer between the metal oxide and silicon substrate after deposition of the metal oxide layer was suggested. Through experimental measurements and thermodynamic analysis, it is shown that a Ti overlayer, which exhibits a high oxygen solubility, can effectively getter oxygen from the interface layer, thus decomposing SiO2 and reducing the interface layer thickness in a controllable fashion. As one of several possible applications, ALD-ZrO2 and HfO 2 gate dielectric films were deposited on Ge (001) substrates with different surface passivations. After extensive characterization using various microstructural, electrical, and chemical analyses, excellent MOS electrical properties of high-kappa gate dielectrics on Ge were successfully demonstrated with optimized surface nitridation of the Ge substrates.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Beihai; Hu, Zhongqiang; Koritala, Rachel E.

Ceramic film capacitors with high dielectric constant and high breakdown strength hold special promise for applications demanding high power density. By means of chemical solution deposition, we deposited ≈2-μm-thick films of lanthanum-doped lead zirconate titanate (PLZT) on LaNiO3-buffered Ni (LNO/Ni) foils and platinized silicon (PtSi) substrates. The dielectric properties and energy storage performance of the resulting samples were determined under a high level of applied electric field. X-ray diffraction stress analysis revealed that PLZT on LNO/Ni bears a compressive stress of ≈370 MPa while PLZT on PtSi endures a tensile stress of ≈250 MPa. Compressive stress was found to leadmore » to heightened polarization, improved tunability, increased irreversible domain wall motion, and enhanced breakdown strength for PLZT deposited on the LNO/Ni as compared with the PtSi substrate. We observed a tunability of ≈55 and ≈40 % at room temperature under 100 kV/cm applied field, remanent polarization of ≈23.5 and ≈7.4 µC/cm^2, coercive electric field of ≈25.6 and ≈21.1 kV/cm, and dielectric breakdown strength of ≈2.6 and ≈1.5 MV/cm for PLZT deposited on LNO/Ni foils and PtSi substrates, respectively. A high recoverable energy density of ≈85 J/cm^3 and energy conversion efficiency of ≈65 % were measured on the PLZT film grown on LNO/Ni.« less

Fundamental Insight on Developing Low Dielectric Constant Polyimides

NASA Technical Reports Server (NTRS)

Simpson, J. O.; SaintClair, A. K.

1997-01-01

Thermally stable, durable, insulative polyimides are in great demand for the fabrication of microelectronic devices. In this investigation dielectric and optical properties have been studied for several series of aromatic polyimides. The effect of polarizability, fluorine content, and free volume on dielectric constant was examined. In general, minimizing polarizability, maximizing free volume and fluorination all lowered dielectric constants in the polyimides studied.

Organic solar cells based on high dielectric constant materials: An approach to increase efficiency

NASA Astrophysics Data System (ADS)

Hamam, Khalil Jumah Tawfiq

The efficiency of organic solar cells still lags behind inorganic solar cells due to their low dielectric constant which results in a weakly screened columbic attraction between the photogenerated electron-hole system, therefore the probability of charge separating is low. Having an organic material with a high dielectric constant could be the solution to get separated charges or at least weakly bounded electron-hole pairs. Therefore, high dielectric constant materials have been investigated and studied by measuring modified metal-phthalocyanine (MePc) and polyaniline in pellets and thin films. The dielectric constant was investigated as a function of temperature and frequency in the range of 20Hz to1MHz. For MePc we found that the high dielectric constant was an extrinsic property due to water absorption and the formation of hydronuim ion allowed by the ionization of the functional groups such as sulphonated and carboxylic groups. The dielectric constant was high at low frequencies and decreasing as the frequency increase. Investigated materials were applied in fabricated bilayer heterojunction organic solar cells. The application of these materials in an organic solar cells show a significant stability under room conditions rather than improvement in their efficiency.

Determination of mass density, dielectric, elastic, and piezoelectric constants of bulk GaN crystal.

PubMed

Soluch, Waldemar; Brzozowski, Ernest; Lysakowska, Magdalena; Sadura, Jolanta

2011-11-01

Mass density, dielectric, elastic, and piezoelectric constants of bulk GaN crystal were determined. Mass density was obtained from the measured ratio of mass to volume of a cuboid. The dielectric constants were determined from the measured capacitances of an interdigital transducer (IDT) deposited on a Z-cut plate and from a parallel plate capacitor fabricated from this plate. The elastic and piezoelectric constants were determined by comparing the measured and calculated SAW velocities and electromechanical coupling coefficients on the Z- and X-cut plates. The following new constants were obtained: mass density p = 5986 kg/m(3); relative dielectric constants (at constant strain S) ε(S)(11)/ε(0) = 8.6 and ε(S)(11)/ε(0) = 10.5, where ε(0) is a dielectric constant of free space; elastic constants (at constant electric field E) C(E)(11) = 349.7, C(E)(12) = 128.1, C(E)(13) = 129.4, C(E)(33) = 430.3, and C(E)(44) = 96.5 GPa; and piezoelectric constants e(33) = 0.84, e(31) = -0.47, and e(15) = -0.41 C/m(2).

LaAlO{sub 3}/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pelloquin, Sylvain; Baboux, Nicolas; Albertini, David

2013-01-21

A study of the structural and electrical properties of amorphous LaAlO{sub 3} (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique-leading to a step and terraces surface morphology-and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O{sub 2} in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltagemore » and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 Degree-Sign C, oxygen partial pressure settled at 10{sup -6} Torr, and 550 W of power applied to the O{sub 2} plasma) and post-depositions treatments were investigated to optimize the dielectric constant ({kappa}) and leakage currents density (J{sub Gate} at Double-Vertical-Line V{sub Gate} Double-Vertical-Line = Double-Vertical-Line V{sub FB}- 1 Double-Vertical-Line ). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 A, and J{sub Gate} Almost-Equal-To 10{sup -2}A/cm{sup 2}. This confirms the importance of LaAlO{sub 3} as an alternative high-{kappa} for ITRS sub-22 nm technology node.« less

Effect of vacuum annealing and substrate temperature on structural and optical properties of ZnIn2Se4 thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2013-09-01

Zinc indium selenide (ZnIn2Se4) thin films were prepared by the thermal evaporation technique with high deposition rate. The effect of thermal annealing in vacuum on the crystallinity of the as-deposited films was studied at different temperatures (523, 573 and 623 K). The effect of substrate temperature (623 K) for different thickness values (173, 250, 335 and 346 nm) on the optical parameters of ZnIn2Se4 was also studied. The structural studies showed nanocrystalline nature of the room temperature (300 K) deposited films with crystallite size of about a few nanometers. The crystallite size increased up to 31 nm with increasing the annealing temperature in vacuum. From the reflection and transmission data, the refractive index n and the extinction coefficient k were estimated for ZnIn2Se4 thin films and they were found to be independent of film thickness. Analysis of the absorption coefficient data of the as-deposited films revealed the existence of allowed direct and indirect transitions with optical energy gaps of 2.21 eV and 1.71 eV, respectively. These values decreased with increasing annealing temperature. At substrate temperature of 623 K, the direct band gap increased to 2.41 eV whereas the value of indirect band gap remained nearly unchanged. The dispersion analysis showed that the values of the oscillator energy Eo, dispersion energy Ed, dielectric constant at infinite frequency ε∞, and lattice dielectric constant εL were changed appreciably under the effect of annealing and substrate temperature. The covalent nature of structure was studied as a function of the annealing and substrate temperature using an empirical relation for the dispersion energy Ed. Generalized Miller's rule and linear refractive index were used to estimate the nonlinear susceptibility and nonlinear refractive index of the thin films.

Growth and properties of gradient free sol-gel lead zirconate titanate thin films

NASA Astrophysics Data System (ADS)

Calame, F.; Muralt, P.

2007-02-01

Pb(Zrx,Ti1-x)O3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiOx/SiO2/Si substrates. The gradient in B-site composition as obtained by standard routes could be lowered, reducing Zr concentration fluctuations form ±12to±2.5at.%. The 2μm thick, dense and crack-free films exhibited a {100}-texture index of 98.4%. Grain diameters increased by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant ɛ33,f was obtained as 1620, and the remanent transverse piezoelectric coefficient e31,f was measured as -17.7Cm2.

Enhancement of dielectric constant at percolation threshold in CaCu3 Ti4 O12 ceramic fabricated by both solid state and sol-gel process

NASA Astrophysics Data System (ADS)

Mukherjee, Rupam; Garcia, Lucia; Lawes, Gavin; Nadgorny, Boris

2014-03-01

We have investigated the large dielectric enhancement at the percolation threshold by introducing metallic RuO2 grains into a matrix of CaCu3Ti4O12 (CCTO). The intrinsic response of the pure CCTO samples prepared by solid state and sol-gel processes results in a dielectric constant on the order of 104 and 103 respectively with low loss. Scanning electron microscopy and energy dispersive x-ray spectroscopy indicate that a difference in the thickness of the copper oxide enriched grain boundary is the main reason for the different dielectric properties between these two samples. Introducing RuO2 metallic fillers in these CCTO samples yields a sharp increase of the dielectric constant at percolation threshold fc, by a factor of 6 and 3 respectively. The temperature dependence of the dielectric constant shows that the dipolar relaxation plays an important role in enhancing dielectric constant in composite systems.

Cluster synthesis of monodisperse rutile-TiO2 nanoparticles and dielectric TiO2-vinylidene fluoride oligomer nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balasubramanian, B; Kraemer, KL; Valloppilly, SR

2011-09-13

The embedding of oxide nanoparticles in polymer matrices produces a greatly enhanced dielectric response by combining the high dielectric strength and low loss of suitable host polymers with the high electric polarizability of nanoparticles. The fabrication of oxide-polymer nanocomposites with well-controlled distributions of nanoparticles is, however, challenging due to the thermodynamic and kinetic barriers between the polymer matrix and nanoparticle fillers. In the present study, monodisperse TiO2 nanoparticles having an average particle size of 14.4 nm and predominant rutile phase were produced using a cluster-deposition technique without high-temperature thermal annealing and subsequently coated with uniform vinylidene fluoride oligomer (VDFO) moleculesmore » using a thermal evaporation source, prior to deposition as TiO2-VDFO nanocomposite films on suitable substrates. The molecular coatings on TiO2 nanoparticles serve two purposes, namely to prevent the TiO2 nanoparticles from contacting each other and to couple the nanoparticle polarization to the matrix. Parallel-plate capacitors made of TiO2-VDFO nanocomposite film as the dielectric exhibit minimum dielectric dispersion and low dielectric loss. Dielectric measurements also show an enhanced effective dielectric constant in TiO2-VDFO nanocomposites as compared to that of pure VDFO. This study demonstrates for the first time a unique electroactive particle coating in the form of a ferroelectric VDFO that has high-temperature stability as compared to conventionally used polymers for fabricating dielectric oxide-polymer nanocomposites.« less

Bottom electrodes dependence of microstructures and dielectric properties of compositionally graded (Ba{sub 1-x}Sr{sub x})TiO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Tianjin; Wang Jinzhao; Zhang Baishun

2008-03-04

Compositionally graded (Ba{sub 1-x}Sr{sub x})TiO{sub 3} (BST) thin films, with x decreasing from 0.3 to 0, were deposited on Pt/Ti/SiO{sub 2}/Si and Ru/SiO{sub 2}/Si substrates by radio frequency magnetron sputtering technology. The microstructure and dielectric properties of the graded BST thin films were investigated. It was found that the films on Ru electrode have better crystallization, and that RuO{sub 2} is present between the Ru bottom electrode and the graded BST thin films by X-ray diffraction and SEM analysis. Dielectric measurement reveals that the graded BST thin films deposited on Ru bottom electrode have higher dielectric constant and tunability. Themore » enhanced dielectric behavior is attributed to better crystallization as well as smaller space charge capacitance width and the formation of RuO{sub 2} that is more compatible with the BST films. The graded BST films on Ru electrode show higher leakage current due to lower barrier height and rougher surface of bottom electrode.« less

Dielectric properties of CaCu3Ti4O12-silicone resin composites

NASA Astrophysics Data System (ADS)

Babu, Sanjesh; Singh, Kirti; Govindan, Anil

2012-06-01

CaCu3Ti4O12 (CCTO)-silicone resin composites with various CCTO volume fractions were prepared. Relatively high dielectric constant ( ɛ=119) and low loss (tan δ=0.35) of the composites with CCTO volume fraction of 0.9 were observed. Two theoretical models were employed to predict the dielectric constant of these composites; the dielectric constant obtained via the Maxwell-Garnett model was in close agreement with the experimental data. The dielectric constant of CCTO-silicone resin composites showed a weak frequency dependence at the measuring frequency range and the loss tangent apparently decreases with increase in frequency.

Application of the compensated arrhenius formalism to dielectric relaxation.

PubMed

Petrowsky, Matt; Frech, Roger

2009-12-17

The temperature dependence of the dielectric rate constant, defined as the reciprocal of the dielectric relaxation time, is examined for several groups of organic solvents. Early studies of linear alcohols using a simple Arrhenius equation found that the activation energy was dependent on the chain length of the alcohol. This paper re-examines the earlier data using a compensated Arrhenius formalism that assumes the presence of a temperature-dependent static dielectric constant in the exponential prefactor. Scaling temperature-dependent rate constants to isothermal rate constants so that the dielectric constant dependence is removed results in calculated energies of activation E(a) in which there is a small increase with chain length. These energies of activation are very similar to those calculated from ionic conductivity data using compensated Arrhenius formalism. This treatment is then extended to dielectic relaxation data for n-alkyl bromides, n-nitriles, and n-acetates. The exponential prefactor is determined by dividing the temperature-dependent rate constants by the Boltzmann term exp(-E(a)/RT). Plotting the prefactors versus the static dielectric constant places the data on a single master curve for each group of solvents.

Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, H.; Shohet, J. L.; Ryan, E. T.

2014-11-17

Vacuum ultraviolet (VUV) irradiation is generated during plasma processing in semiconductor fabrications, while the effect of VUV irradiation on the dielectric constant (k value) of low-k materials is still an open question. To clarify this problem, VUV photons with a range of energies were exposed on low-k organosilicate dielectrics (SiCOH) samples at room temperature. Photon energies equal to or larger than 6.0 eV were found to decrease the k value of SiCOH films. VUV photons with lower energies do not have this effect. This shows the need for thermal heating in traditional ultraviolet (UV) curing since UV light sources do notmore » have sufficient energy to change the dielectric constant of SiCOH and additional energy is required from thermal heating. In addition, 6.2 eV photon irradiation was found to be the most effective in decreasing the dielectric constant of low-k organosilicate films. Fourier Transform Infra-red Spectroscopy shows that these 6.2 eV VUV exposures removed organic porogens. This contributes to the decrease of the dielectric constant. This information provides the range of VUV photon energies that could decrease the dielectric constant of low-k materials most effectively.« less

Electrical properties of radio-frequency sputtered HfO2 thin films for advanced CMOS technology

NASA Astrophysics Data System (ADS)

Sarkar, Pranab Kumar; Roy, Asim

2015-08-01

The Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO2 film have been studied employing Al/HfO2/p-Si metal-oxide-semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO2 film is obtained as 23,7.57×1011eV-1 cm-2 and 2.7×10-5 Acm-2, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

Method for fabrication of crack-free ceramic dielectric films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectricmore » film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.« less

Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

NASA Astrophysics Data System (ADS)

Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

2009-07-01

Dielectric properties of Ba0.7Sr0.3TiO3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

Synthesis and Characterization of High-Dielectric-Constant Nanographite-Polyurethane Composite

NASA Astrophysics Data System (ADS)

Mishra, Praveen; Bhat, Badekai Ramachandra; Bhattacharya, B.; Mehra, R. M.

2018-05-01

In the face of ever-growing demand for capacitors and energy storage devices, development of high-dielectric-constant materials is of paramount importance. Among various dielectric materials available, polymer dielectrics are preferred for their good processability. We report herein synthesis and characterization of nanographite-polyurethane composite with high dielectric constant. Nanographite showed good dispersibility in the polyurethane matrix. The thermosetting nature of polyurethane gives the composite the ability to withstand higher temperature without melting. The resultant composite was studied for its dielectric constant (ɛ) as a function of frequency. The composite exhibited logarithmic variation of ɛ from 3000 at 100 Hz to 225 at 60 kHz. The material also exhibited stable dissipation factor (tan δ) across the applied frequencies, suggesting its ability to resist current leakage.

Preparation and Characterization of Flexible Substrate Material from Phenyl-Thiophene-2-Carbaldehyde Compound

PubMed Central

Rahman, Ashiqur; Islam, Mohammad Tariqul; Samsuzzaman, Md; Singh, Mandeep Jit; Akhtaruzzaman, Md.

2016-01-01

In this paper, a novel phenyl-thiophene-2-carbaldehyde compound-based flexible substrate material has been presented. Optical and microwave characterization of the proposed material are done to confirm the applicability of the proposed material as a substrate. The results obtained in this work show that the phenyl-thiophene-2-carbaldehyde consists of a dielectric constant of 3.03, loss tangent of 0.003, and an optical bandgap of 3.24 eV. The proposed material is analyzed using commercially available EM simulation software and validated by the experimental analysis of the flexible substrate. The fabricated substrate also shows significant mechanical flexibility and light weight. The radiating copper patch deposited on the proposed material substrate incorporated with partial ground plane and microstrip feeding technique shows an effective impedance bandwidth of 3.8 GHz. It also confirms an averaged radiation efficiency of 81% throughout the frequency band of 5.4–9.2 GHz. PMID:28773479

The effect of diamic acid additives on the dielectric constant of polyimides

NASA Technical Reports Server (NTRS)

Stoakley, Diane M.; St. Clair, Anne K.

1988-01-01

The effect of six selected diamic acids additives (including 2,2-prime bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride-aniline (An); 4,4-prime-oxydiphthalic anhydride-An, 3,3-prime diaminodiphenyl sulfone-phthalic anhydride (PA); 4,4-prime-oxydianiline-PA; 2,2-bis 4(4-aminophenoxy)phenyl hexafluoropropane-PA; and 2,2-bis 4(3-aminophenoxy)phenyl hexafluoropropane-PA) on the dielectric constants of low-dielectric-constant polyimide resins was evaluated. It was found that the effect of the incorporation of the diamic acids on reducing the dielectric constant of polyimides may be limited as the dielectric constant of the base resin itself becomes very low. The additives were found to lower the resin's values of glass transition temperature, with no effect on thermooxidative stability.

Dielectric constant of liquid alkanes and hydrocarbon mixtures

NASA Technical Reports Server (NTRS)

Sen, A. D.; Anicich, V. G.; Arakelian, T.

1992-01-01

The complex dielectric constants of n-alkanes with two to seven carbon atoms have been measured. The measurements were conducted using a slotted-line technique at 1.2 GHz and at atmospheric pressure. The temperature was varied from the melting point to the boiling point of the respective alkanes. The real part of the dielectric constant was found to decrease with increasing temperature and correlate with the change in the molar volume. An upper limit to all the loss tangents was established at 0.001. The complex dielectric constants of a few mixtures of liquid alkanes were also measured at room temperature. For a pentane-octane mixture the real part of the dielectric constant could be explained by the Clausius-Mosotti theory. For the mixtures of n-hexane-ethylacetate and n-hexane-acetone the real part of the dielectric constants could be explained by the Onsager theory extended to mixtures. The dielectric constant of the n-hexane-acetone mixture displayed deviations from the Onsager theory at the highest fractions of acetone. The dipole moments of ethylacetate and acetone were determined for dilute mixtures using the Onsager theory and were found to be in agreement with their accepted gas-phase values. The loss tangents of the mixtures exhibited a linear relationship with the volume fraction for low concentrations of the polar liquids.

Investigation of dielectric properties of different cake formulations during microwave and infrared-microwave combination baking.

PubMed

Sakiyan, Ozge; Sumnu, Gulum; Sahin, Serpil; Meda, Venkatesh

2007-05-01

Dielectric properties can be used to understand the behavior of food materials during microwave processing. Dielectric properties influence the level of interaction between food and high frequency electromagnetic energy. Dielectric properties are, therefore, important in the design of foods intended for microwave preparation. In this study, it was aimed to determine the variation of dielectric properties of different cake formulations during baking in microwave and infrared-microwave combination oven. In addition, the effects of formulation and temperature on dielectric properties of cake batter were examined. Dielectric constant and loss factor of cake samples were shown to be dependent on formulation, baking time, and temperature. The increase in baking time and temperature decreased dielectric constant and loss factor of all formulations. Fat content was shown to increase dielectric constant and loss factor of cakes.

Dielectric Properties of PANI/CuO Nanocomposites

NASA Astrophysics Data System (ADS)

Ambalagi, Sharanabasamma M.; Devendrappa, Mahalesh; Nagaraja, Sannakki; Sannakki, Basavaraja

2018-02-01

The combustion method is used to prepare the Copper Oxide (CuO) nanoparticles. The nanocomposites of Polyaniline (PANI) by doping with copper oxide nanoparticles have synthesized at 10, 20, 30, 40 and 50 different weight percentages during the in-situ polymerization. The samples of nanocomposite of PANI-CuO were characterized by using X-Ray diffraction (XRD) technique. The physical properties such as dielectric constant, dielectric loss and A C conductivity of the nanocomposites are studied as a function of frequency in the range 5Hz-35MHz at room temperature. It is found that the dielectric constant decreases as the frequency increases. The dielectric constant it remains constant at higher frequencies and it is also observed that in particular frequency both the dielectric constant and dielectric loss are decreased as a weight percentage of CuO increased. In case of AC conductivity it is found that as the frequency increases the AC conductivity remains constant up to 3.56MHz and afterwards it increases as frequency increases. This is due to the increase in charge carriers through the hopping mechanism in the polymer nanocomposites. It is also observed that as a weight percentage of CuO increased the AC conductivity is also increasing at a particular frequency.

Growth of epitaxial Pb(Zr,Ti)O3 films by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Lee, J.; Safari, A.; Pfeffer, R. L.

1992-10-01

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary have been grown on MgO (100) and Y1Ba2Cu3Ox (YBCO) coated MgO substrates. Substrate temperature and oxygen pressure were varied to achieve ferroelectric films with a perovskite structure. Films grown on MgO had the perovskite structure with an epitaxial relationship with the MgO substrate. On the other hand, films grown on the YBCO/MgO substrate had an oriented structure to the surface normal with a misorientation in the plane parallel to the surface. The measured dielectric constant and loss tangent at 1 kHz were 670 and 0.05, respectively. The remnant polarization and coercive field were 42 μC/cm2 and 53 kV/cm. A large internal bias field (12 kV/cm) was observed in the as-deposited state of the undoped PZT films.

Graphene plasmonic nanogratings for biomolecular sensing in liquid

NASA Astrophysics Data System (ADS)

Chorsi, Meysam T.; Chorsi, Hamid T.

2017-12-01

We design a surface plasmon resonance (SPR) molecular sensor based on graphene and biomolecule adsorption at graphene-liquid interfaces. The sensor configuration consists of two opposing arrays of graphene nanograting mounted on a substrate, with a liquid-phase sensing medium confined between them. We characterize the design in simulation on a variety of substrates by altering the refractive index of the sensing medium and varying the absorbance-transmittance characteristics. The influence of various parameters on the biosensor's performance, including the Fermi level of graphene, the dielectric constant of the substrate, and the incident angle for plasmon excitation, is investigated. Numerical simulations demonstrate the sensitivity higher than 3000 nm/RIU (refractive index unit). The device supports a wide range of substrates in which graphene can be epitaxially grown. The proposed biosensor works independent of the incident angle and can be tuned to cover a broadband wavelength range.

Kinetics of hydrogen peroxide decomposition by catalase: hydroxylic solvent effects.

PubMed

Raducan, Adina; Cantemir, Anca Ruxandra; Puiu, Mihaela; Oancea, Dumitru

2012-11-01

The effect of water-alcohol (methanol, ethanol, propan-1-ol, propan-2-ol, ethane-1,2-diol and propane-1,2,3-triol) binary mixtures on the kinetics of hydrogen peroxide decomposition in the presence of bovine liver catalase is investigated. In all solvents, the activity of catalase is smaller than in water. The results are discussed on the basis of a simple kinetic model. The kinetic constants for product formation through enzyme-substrate complex decomposition and for inactivation of catalase are estimated. The organic solvents are characterized by several physical properties: dielectric constant (D), hydrophobicity (log P), concentration of hydroxyl groups ([OH]), polarizability (α), Kamlet-Taft parameter (β) and Kosower parameter (Z). The relationships between the initial rate, kinetic constants and medium properties are analyzed by linear and multiple linear regression.

Three-phase Fe3O4/MWNT/PVDF nanocomposites with high dielectric constant for embedded capacitor

NASA Astrophysics Data System (ADS)

Wang, Haiyun; Fu, Qiong; Luo, Jiangqi; Zhao, Dongmei; Luo, Laihui; Li, Weiping

2017-06-01

To get the dielectric material with a high dielectric constant and low dielectric loss, the modified multiwalled carbon nanotube (MWNT-S) and ferroferric oxide (Fe3O4) particles were embedded into polyvinylidene fluoride (PVDF) to fabricate the Fe3O4/MWNT-S/PVDF ternary composites. The maximum dielectric constant of these composites can be up to 3490 at a very low filler fraction, and dielectric loss can be suppressed below 0.5. The small amount of the second filler (Fe3O4) can accelerate the formation of a percolation conductive network and improve the interfacial polarization. Therefore, the excellent dielectric properties can be achieved at low loading of fillers.

Dielectric spectroscopy of Ag-starch nanocomposite films

NASA Astrophysics Data System (ADS)

Meena; Sharma, Annu

2018-04-01

In the present work Ag-starch nanocomposite films were fabricated via chemical reduction route. The formation of Ag nanoparticles was confirmed using transmission electron microscopy (TEM). Further the effect of varying concentration of Ag nanoparticles on the dielectric properties of starch has been studied. The frequency response of dielectric constant (ε‧), dielectric loss (ε″) and dissipation factor tan(δ) has been studied in the frequency range of 100 Hz to 1 MHz. Dielectric data was further analysed using Cole-Cole plots. The dielectric constant of starch was found to be 4.4 which decreased to 2.35 in Ag-starch nanocomposite film containing 0.50 wt% of Ag nanoparticles. Such nanocomposites with low dielectric constant have potential applications in microelectronic technologies.

On the Dielectric Constant for Acetanilide: Experimental Measurements and Effect on Energy Transport

NASA Astrophysics Data System (ADS)

Careri, G.; Compatangelo, E.; Christiansen, P. L.; Halding, J.; Skovgaard, O.

1987-01-01

Experimental measurements of the dielectric constant for crystalline acetanilide powder for temperatures ranging from - 140°C to 20°C and for different hydration levels are presented. A Davydov-soliton computer model predicts dramatic changes in the energy transport and storage for typically increased values of the dielectric constant.

The transmembrane gradient of the dielectric constant influences the DPH lifetime distribution.

PubMed

Konopásek, I; Kvasnicka, P; Amler, E; Kotyk, A; Curatola, G

1995-11-06

The fluorescence lifetime distribution of 1,6-diphenyl-1,3,5-hexatriene (DPH) and 1-[4-(trimethylamino)phenyl]-6-phenyl-1,3,5-hexatriene (TMA-DPH) in egg-phosphatidylcholine liposomes was measured in normal and heavy water. The lower dielectric constant (by approximately 12%) of heavy water compared with normal water was employed to provide direct evidence that the drop of the dielectric constant along the membrane normal shifts the centers of the distribution of both DPH and TMA-DPH to higher values and sharpens the widths of the distribution. The profile of the dielectric constant along the membrane normal was not found to be a linear gradient (in contrast to [1]) but a more complex function. Presence of cholesterol in liposomes further shifted the center of the distributions to higher value and sharpened them. In addition, it resulted in a more gradient-like profile of the dielectric constant (i.e. linearization) along the normal of the membrane. The effect of the change of dielectric constant on the membrane proteins is discussed.

Wave propagation in and around negative-dielectric-constant discharge plasma

NASA Astrophysics Data System (ADS)

Sakai, Osamu; Iwai, Akinori; Omura, Yoshiharu; Iio, Satoshi; Naito, Teruki

2018-03-01

The modes of wave propagation in media with a negative dielectric constant are not simple, unlike those for electromagnetic waves in media with a positive dielectric constant (where modes propagate inside the media with positive phase velocity since the refractive index is usually positive). Instead, they depend on the permeability sign, either positive or negative, and exhibit completely different features. In this report, we investigated a wave confined on the surface of a negative-dielectric-constant and a positive-permeability plasma medium for which the refractive index is imaginary. The propagation mode is similar to surface plasmon polaritons on the metal containing free electrons, but its frequency band is different due to the significant spatial gradient of the dielectric constant and a different pressure term. We also studied a wave with a negative dielectric constant and negative permeability, where the refractive index is negative. This wave can propagate inside the media, but its phase velocity is negative. It also shares similar qualities with waves in plasmonic devices with negative permeability in the photon range.

Dielectric Properties of PMMA and its Composites with ZrO2

NASA Astrophysics Data System (ADS)

Sannakki, Basavaraja; Anita

The polymer films of PMMA with different thickness and its composites with ZrO2 at various weight percentages but of same thickness have been studied. The determination of its dielectric properties, dielectric loss, a.conductivity and dielectric modulus were carried out using capacitance measurements of the above samples as a function of frequency, over the range 50 Hz - 5 MHz at room temperature. The films of PMMA and its composites have been characterized using X-Ray Diffractometer. The dielectric permittivity of films of PMMA behaves nonlinearly as frequency increases over the range 50-300 Hz, where as above 300 Hz the values of dielectric constant remains constant. But it is observed that the dielectric constant of PMMA increases as thickness of the film increases. In case of composite films of PMMA with ZrO2 the values of dielectric permittivity decreases gradually up to frequency of around 1 KHz and at higher frequencies it remains constant for all the weight percentages of ZrO2. The complex form of dielectric modulus of PMMA is obtained from the experimentally measured data of dielectric constant and dielectric loss values. The relaxation time of the orientation of dipoles is obtained from the peak value of angular frequency through the plots of imaginary part of electrical modulus as function of frequency. The impedance of PMMA polymer increases as thickness of the films increases. The a c conductivity of PMMA film remains constant up to frequency of 1 MHz and above. It shows a nonlinear phenomenon with peak values at frequency 4 MHz. Shape and size of the nanoparticles of composite film of PMMA with ZrO2 was analyzed by Field Emission Scanning Electron Microscope (FESEM).

Insulators for Pb(1-x)Sn(x)Te

NASA Technical Reports Server (NTRS)

Tsuo, Y. H.; Sher, A.

1981-01-01

Thin films of LaF3 were e-gun and thermally deposited on several substrates. The e-gun deposited films are fluorine deficient, have high ionic conductivities that persist to 77 K, and high effective dielectric constants. The thermally deposited material tends to be closer to stoichiometric, and have higher effective breakdown field strengths. Thermally deposited LaF3 films with resistivities in excess of 10 to the 12th power ohms - cm were deposited on metal coated glass substrates. The LaF3 films were shown to adhere well to PbSnTe, surviving repeated cycles between room temperature and 77 K. The LaF3 films on GaAs were also studied.

High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate

NASA Astrophysics Data System (ADS)

Na, Jong H.; Kitamura, M.; Arakawa, Y.

2007-11-01

We fabricated high mobility, low voltage n-channel transistors on plastic substrates by combining an amorphous phase C60 film and a high dielectric constant gate insulator titanium silicon oxide (TiSiO2). The transistors exhibited high performance with a threshold voltage of 1.13V, an inverse subthreshold swing of 252mV/decade, and a field-effect mobility up to 1cm2/Vs at an operating voltage as low as 5V. The amorphous phase C60 films can be formed at room temperature, implying that this transistor is suitable for corresponding n-channel transistors in flexible organic logic devices.

The Effects of ph on Structural and Optical Characterization of Iron Oxide Thin Films

NASA Astrophysics Data System (ADS)

Tezel, Fatma Meydaneri; Özdemir, Osman; Kariper, I. Afşin

In this study, the iron oxide thin films have been produced by chemical bath deposition (CBD) method as a function of pH onto amorphous glass substrates. The surface images of the films were investigated with scanning electron microscope (SEM). The crystal structures, orientation of crystallization, crystallite sizes, and dislocation density i.e. structural properties of the thin films were analyzed with X-ray diffraction (XRD). The optical band gap (Eg), optical transmission (T%), reflectivity (R%), absorption coefficient (α), refraction index (n), extinction coefficient (k) and dielectric constant (ɛ) of the thin films were investigated depending on pH, deposition time, solution temperature, substrate temperature, thickness of the films by UV-VIS spectrometer.

Giant dielectric constant in titania nanoparticles embedded in conducting polymer matrix.

PubMed

Dey, Ashis; De, Sukanta; De, Amitabha; De, S K

2006-05-01

Complex impedance and dielectric permittivity of titania-polypyrrole nanocomposites have been investigated as a function of frequency and temperature at different compositions. A very large dielectric constant of about 13,000 at room temperature has been observed. The colossal dielectric constant is mainly dominated by interfacial polarization due to Maxwell-Wagner relaxation effect. Two completely separate groups of dielectric relaxation have been observed. The low frequency dielectric relaxation arises from surface defect states of titania nanoparticles. The broad peak at high frequency region is attributed to Maxwell-Wagner type polarization originating from the inhomogeneous property of nanocomposite. An abrupt change in grain boundary conductivity and dielectric relaxation associated with titania was observed at around 150 K. Anomalous behavior in conductivity and dielectric relaxation is qualitatively explained by band tail structure of titania nanoparticle.

Colossal dielectric constant in PrFeO 3 semiconductor ceramics

NASA Astrophysics Data System (ADS)

Prasad, Bandi Vittal; Rao, G. Narsinga; Chen, J. W.; Babu, D. Suresh

2012-02-01

The perovskite PrFeO 3 ceramics were synthesized via sol-gel method. The dielectric properties and impedance spectroscopy (IS) of these ceramics were studied in the frequency range from 100 Hz to 1000 kHz in the temperature range from 80 K to 300 K. These materials exhibited colossal dielectric constant value of ˜10 4 at room temperature. The response is similar to that observed for relaxorferroelectrics. IS data analysis indicates the ceramics to be electrically heterogeneous semiconductor consisting of semiconducting grains with dielectric constant 30 and more resistive grain boundaries with effective dielectric constant ˜10 4. We conclude, therefore that grain boundary effect is the primary source for the high effective permittivity in PrFeO 3 ceramics.

Leakage radiation interference microscopy.

PubMed

Descrovi, Emiliano; Barakat, Elsie; Angelini, Angelo; Munzert, Peter; De Leo, Natascia; Boarino, Luca; Giorgis, Fabrizio; Herzig, Hans Peter

2013-09-01

We present a proof of principle for a new imaging technique combining leakage radiation microscopy with high-resolution interference microscopy. By using oil immersion optics it is demonstrated that amplitude and phase can be retrieved from optical fields, which are evanescent in air. This technique is illustratively applied for mapping a surface mode propagating onto a planar dielectric multilayer on a thin glass substrate. The surface mode propagation constant estimated after Fourier transformation of the measured complex field is well matched with an independent measurement based on back focal plane imaging.

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film.

PubMed

Park, Jeongmin; Kang, Haeyong; Kang, Kyeong Tae; Yun, Yoojoo; Lee, Young Hee; Choi, Woo Seok; Suh, Dongseok

2016-03-09

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

PubMed Central

Tao, J.; Zhao, C.Z.; Zhao, C.; Taechakumput, P.; Werner, M.; Taylor, S.; Chalker, P. R.

2012-01-01

In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion, could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the high-k thin film and silicon substrate) and the parasitic effects. The effect of the lossy interfacial layer on frequency dispersion was investigated and modeled based on a dual frequency technique. The significance of parasitic effects (including series resistance and the back metal contact of the metal-oxide-semiconductor (MOS) capacitor) on frequency dispersion was also studied. The effect of surface roughness on frequency dispersion is also discussed. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Curie-von Schweidler (CS) law, the Kohlrausch-Williams-Watts (KWW) relationship and the Havriliak-Negami (HN) relationship. Dielectric relaxation mechanisms are also discussed. PMID:28817021

Internal residual stress studies and enhanced dielectric properties in La0.7Sr0.3CoO3 buffered (Ba,Sr)TiO3 thin films

NASA Astrophysics Data System (ADS)

Lu, Shengbo; Xu, Zhengkui

2009-09-01

Ba0.6Sr0.4TiO3 (BST) thin films were deposited on La0.7Sr0.3CoO3 (LSCO) buffered and unbuffered Pt (111)/Ti/SiO2/Si substrates by pulsed laser deposition. The former exhibits a (100) preferred orientation and the latter a random orientation, respectively. Grazing incident x-ray diffraction study revealed that the tensile residual stress observed in the latter is markedly reduced in the former. As a result, the dielectric property of the LSCO buffered BST thin film is greatly improved, which shows a larger dielectric constant and tunability, smaller loss tangent, and lower leakage current than those of the unbuffered BST thin film. The relaxation of the larger tensile residual stress is attributed to the larger grain size in the buffered BST thin film and to a closer match of thermal expansion coefficient between the BST and the LSCO buffer layer.

In-plane dielectric properties of epitaxial Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown on GaAs for tunable device application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Zhibin; Hao Jianhua

2012-09-01

We have epitaxially deposited ferroelectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thin films grown on GaAs substrate via SrTiO{sub 3} buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from -190 to 90 Degree-Sign C, indicating Curie temperature of the BST film to be around 52 Degree-Sign C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is foundmore » to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application.« less

Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3.

PubMed

Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Yue, Jin; Liu, Chang

2015-01-01

Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

Theoretical analysis of optical properties of dielectric coatings dependence on substrate subsurface defects

NASA Astrophysics Data System (ADS)

Shen, Jian; Liu, Shouhua; Shen, Zicai; Shao, Jianda; Fan, Zhengxiu

2006-03-01

A model for refractive index of stratified dielectric substrate was put forward according to theories of inhomogeneous coatings. The substrate was divided into surface layer, subsurface layer and bulk layer along the normal direction of its surface. Both the surface layer (separated into N1 sublayers of uniform thickness) and subsurface layer (separated into N2 sublayers of uniform thickness), whose refractive indices have different statistical distributions, are equivalent to inhomogeneous coatings, respectively. And theoretical deduction was carried out by employing characteristic matrix method of optical coatings. An example of mathematical calculation for optical properties of dielectric coatings had been presented. The computing results indicate that substrate subsurface defects can bring about additional bulk scattering and change propagation characteristic in thin film and substrate. Therefore, reflectance, reflective phase shift and phase difference of an assembly of coatings and substrate deviate from ideal conditions. The model will provide some beneficial theory directions for improving optical properties of dielectric coatings via substrate surface modification.

Non-aqueous electrochemical deposition of lead zirconate titanate films for flexible sensor applications

NASA Astrophysics Data System (ADS)

Joseph, Sherin; Kumar, A. V. Ramesh; John, Reji

2017-11-01

Lead zirconate titanate (PZT) is one of the most important piezoelectric materials widely used for underwater sensors. However, PZTs are hard and non-compliant and hence there is an overwhelming attention devoted toward making it flexible by preparing films on flexible substrates by different routes. In this work, the electrochemical deposition of composition controlled PZT films over flexible stainless steel (SS) foil substrates using non-aqueous electrolyte dimethyl sulphoxide (DMSO) was carried out. Effects of various key parameters involved in electrochemical deposition process such as current density and time of deposition were studied. It was found that a current density of 25 mA/cm2 for 5 min gave a good film. The morphology and topography evaluation of the films was carried out by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively, which showed a uniform morphology with a surface roughness of 2 nm. The PZT phase formation was studied using X-ray diffraction (XRD) and corroborated with Raman spectroscopic studies. The dielectric constant, dielectric loss, hysteresis and I-V characteristics of the film was evaluated.

Lightning arrestor connector lead magnesium niobate qualification pellet test procedures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tuohig, W.; Mahoney, Patrick A.; Tuttle, Bruce Andrew

2009-02-01

Enhanced knowledge preservation for DOE DP technical component activities has recently received much attention. As part of this recent knowledge preservation effort, improved documentation of the sample preparation and electrical testing procedures for lead magnesium niobate--lead titanate (PMN/PT) qualification pellets was completed. The qualification pellets are fabricated from the same parent powders used to produce PMN/PT lightning arrestor connector (LAC) granules at HWF&T. In our report, the procedures for fired pellet surface preparation, electrode deposition, electrical testing and data recording are described. The dielectric measurements described in our report are an information only test. Technical reasons for selecting the electrodemore » material, electrode size and geometry are presented. The electrical testing is based on measuring the dielectric constant and dissipation factor of the pellet during cooling from 280 C to 220 C. The most important data are the temperature for which the peak dielectric constant occurs (Curie Point temperature) and the peak dielectric constant magnitude. We determined that the peak dielectric constant for our procedure would be that measured at 1 kHz at the Curie Point. Both the peak dielectric constant and the Curie point parameters provide semi-quantitative information concerning the chemical and microstructural homogeneity of the parent material used for the production of PMN/PT granules for LACs. Finally, we have proposed flag limits for the dielectric data for the pellets. Specifically, if the temperature of the peak dielectric constant falls outside the range of 250 C {+-} 30 C we propose that a flag limit be imposed that will initiate communication between production agency and design agency personnel. If the peak dielectric constant measured falls outside the range 25,000 {+-} 10,000 we also propose that a flag limit be imposed.« less

High dielectric hyperbranched polyaniline materials.

PubMed

Yan, X Z; Goodson, T

2006-08-03

New organic materials for the purpose of high speed capacitor applications are discussed. The effect of the microcrystalline size dependence of different polyaniline polymeric systems on the dielectric constant is investigated. Two different methods are described for the preparation of the polyaniline dielectric materials. By sonication polymerization, the prepared polyaniline with a suggested hyperbranched structure showed much larger microcrystalline domains in comparison to the conventional linear polyaniline. Investigations of the dielectric constant and capacitance at a relatively high frequency (>100 kHz) suggested that the system with the larger microcrystalline domains (hyperbranched) gives rise to a larger dielectric constant. The mechanism of the increased dielectric response at higher frequencies is investigated by EPR spectroscopy, and these results suggest that delocalized polarons may provide a way to enhance the dielectric response at high frequency.

Colossal dielectric constant up to gigahertz at room temperature

NASA Astrophysics Data System (ADS)

Krohns, S.; Lunkenheimer, P.; Kant, Ch.; Pronin, A. V.; Brom, H. B.; Nugroho, A. A.; Diantoro, M.; Loidl, A.

2009-03-01

The applicability of recently discovered materials with extremely high ("colossal") dielectric constants, required for future electronics, suffers from the fact that their dielectric constant ɛ' only is huge in a limited frequency range below about 1 MHz. In the present report, we show that the dielectric properties of a charge-ordered nickelate, La15/8Sr1/8NiO4, surpass those of other materials. Especially, ɛ' retains its colossal magnitude of >10 000 well into the gigahertz range.

Facile synthesis of Ni/NiO@GO nanocomposites and its enhanced dielectric constant

NASA Astrophysics Data System (ADS)

Sarkar, S.; Giri, N.; Mondal, A.; Ray, R.

2018-05-01

Ni/NiO embedded Graphene Oxide (GO): Ni/NiO@GO is synthesized by citric acid assisted Pechini-type method. Structural and morphological characterizations are performed by X-ray powdered diffraction (XRD), field emission scanning electron microscopy (FESEM) and tunneling electron microscopy (TEM). Defects in GO sheets are probed by RAMAN spectroscopy. The temperature variation of dielectric constant (ɛR) and dielectric loss (tan δ) are investigated in the temperature range 300 - 400 K. Decoration of GO with Ni/NiO nanoparticles enhances its ɛR by˜55 times. Moreover, its dielectric constant measured at 5 MHz is found to be˜430 times to that of Ni/NiO along with the reduction of dielectric loss by a factor˜0.5. The enhanced dielectric constant makes the composite Ni/NiO@GO a potential candidate for using in ecologically friendly energy storage devices.

Cole-cole analysis and electrical conduction mechanism of N{sup +} implanted polycarbonate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chawla, Mahak; Shekhawat, Nidhi; Aggarwal, Sanjeev, E-mail: write2sa@gmail.com

2014-05-14

In this paper, we present the analysis of the dielectric (dielectric constant, dielectric loss, a.c. conductivity) and electrical properties (I–V characteristics) of pristine and nitrogen ion implanted polycarbonate. The samples of polycarbonate were implanted with 100 keV N{sup +} ions with fluence ranging from 1 × 10{sup 15} to 1 × 10{sup 17} ions cm{sup −2}. The dielectric measurements of these samples were performed in the frequency range of 100 kHz to 100 MHz. It has been observed that dielectric constant decreases whereas dielectric loss and a.c. conductivity increases with increasing ion fluence. An analysis of real and imaginary parts of dielectric permittivity has beenmore » elucidated using Cole-Cole plot of the complex permittivity. With the help of Cole-Cole plot, we determined the values of static dielectric constant (ε{sub s}), optical dielectric constant (ε{sub ∞}), spreading factor (α), average relaxation time (τ{sub 0}), and molecular relaxation time (τ). The I–V characteristics were studied using Keithley (6517) electrometer. The electrical conduction behaviour of pristine and implanted polycarbonate specimens has been explained using various models of conduction.« less

Predictive methods of some optoelectronic properties for blends based on quaternized polysulfones

NASA Astrophysics Data System (ADS)

Dobos, Adina Maria; Filimon, Anca

2017-11-01

Blends based on quaternized polysulfones were investigated in terms of optical and electronic properties. By applying the Bicerano formalism the refractive index and dielectric constant were evaluated. Also, the dielectric constant of these blends was studied as a function of temperature and frequency. As the result of the main chain structure and charged groups, an increase in theoretical values of the refractive index and dielectric constant with increasing of the ionic quaternized units content in the polymer blend occurs. Additionally, decrease in the dielectric constant with the increase of frequency and decrease of temperature was observed. Refractive index and dielectric constant values indicate that the analyzed samples are transparent and can be used in obtaining of materials with applications involving a small polarizability. Thus, the results are important in prediction of the special optoelectronic features of new polymers blends to obtain high-performance materials with applications in electronic and biomedical fields.

A Variational Statistical-Field Theory for Polar Liquid Mixtures

NASA Astrophysics Data System (ADS)

Zhuang, Bilin; Wang, Zhen-Gang

Using a variational field-theoretic approach, we derive a molecularly-based theory for polar liquid mixtures. The resulting theory consists of simple algebraic expressions for the free energy of mixing and the dielectric constant as functions of mixture composition. Using only the dielectric constants and the molar volumes of the pure liquid constituents, the theory evaluates the mixture dielectric constants in good agreement with the experimental values for a wide range of liquid mixtures, without using adjustable parameters. In addition, the theory predicts that liquids with similar dielectric constants and molar volumes dissolve well in each other, while sufficient disparity in these parameters result in phase separation. The calculated miscibility map on the dielectric constant-molar volume axes agrees well with known experimental observations for a large number of liquid pairs. Thus the theory provides a quantification for the well-known empirical ``like-dissolves-like'' rule. Bz acknowledges the A-STAR fellowship for the financial support.

Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications

NASA Astrophysics Data System (ADS)

Gopalan, Sundararaman; Dutta, Shibesh; Ramesh, Sivaramakrishnan; Prathapan, Ragesh; Sreehari G., S.

2017-07-01

As scaling of device dimensions has continued, it has become necessary to replace traditional SiO2 with high dielectric constant materials in the conventional CMOS devices. In addition, use of metal gate electrodes and Germanium substrates may have to be used in order to address leakage and mobility issues. Al2O3 is one of the potential candidates both for CMOS and as a blocking dielectric for Flash memory applications owing to its low leakage. In this study, the effects of sputtering conditions and post-deposition annealing conditions on the electrical and reliability characteristics of MOS capacitors using Al2O3 films on Si and Ge substrates with Aluminium gate electrodes have been presented. It was observed that higher sputtering power resulted in larger flat-band voltage (Vfb) shifts, more hysteresis, higher interface state density (Dit) and a poorer reliability. Wit was also found that while a short duration high temperature annealing improves film characteristics, a long duration anneal even at 800C was found to be detrimental to MOS characteristics. Finally, the electronic conduction mechanism in Al2O3 films was also studied. It was observed that the conduction mechanism varied depending on the annealing condition, thickness of film and electric field.

Analysis of capacitive force acting on a cantilever tip at solid/liquid interfaces

NASA Astrophysics Data System (ADS)

Umeda, Ken-ichi; Kobayashi, Kei; Oyabu, Noriaki; Hirata, Yoshiki; Matsushige, Kazumi; Yamada, Hirofumi

2013-04-01

Dielectric properties of biomolecules or biomembranes are directly related to their structures and biological activities. Capacitance force microscopy based on the cantilever deflection detection is a useful scanning probe technique that can map local dielectric constant. Here we report measurements and analysis of the capacitive force acting on a cantilever tip at solid/liquid interfaces induced by application of an alternating voltage to explore the feasibility of the measurements of local dielectric constant by the voltage modulation technique in aqueous solutions. The results presented here suggest that the local dielectric constant measurements by the conventional voltage modulation technique are basically possible even in polar liquid media. However, the cantilever deflection is not only induced by the electrostatic force, but also by the surface stress, which does not include the local dielectric information. Moreover, since the voltage applied between the tip and sample are divided by the electric double layer and the bulk polar liquid, the capacitive force acting on the apex of the tip are strongly attenuated. For these reasons, the lateral resolution in the local dielectric constant measurements is expected to be deteriorated in polar liquid media depending on the magnitude of dielectric response. Finally, we present the criteria for local dielectric constant measurements with a high lateral resolution in polar liquid media.

Solar cell with silicon oxynitride dielectric layer

DOEpatents

Shepherd, Michael; Smith, David D

2015-04-28

Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0

Silver (Ag)-Graphene oxide (GO) - Poly (vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) nanostructured composites with high dielectric constant and low dielectric loss

NASA Astrophysics Data System (ADS)

Moharana, Srikanta; Mahaling, Ram Naresh

2017-07-01

The Silver (Ag)-Graphene oxide (GO)-Poly (vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) composites were prepared by solution casting techniques and their dielectric properties were measured. Field emission scanning electron microscopy (FESEM) and X-ray analysis (XRD) confirmed that Ag layers were formed on the surface of the Graphene oxide sheets and homogeneously dispersed into the PVDF-HFP matrix. The result showed that the incorporation of Ag-GO nanoparticles greatly improved the dielectric constant value nearly about 65 at 100 Hz, which is comparatively much higher than that of pure PVDF-HFP. Furthermore, the dielectric loss of the composite remained at a low level (<0.1 at 100 Hz). A percolation threshold of 1.5 vol% of Ag-GO was calculated and explained accordingly. The composite having high dielectric constant and low dielectric loss might be used as dielectric materials for electronic capacitors.

Improving dielectric properties of BaTiO3/poly(vinylidene fluoride) composites by employing core-shell structured BaTiO3@Poly(methylmethacrylate) and BaTiO3@Poly(trifluoroethyl methacrylate) nanoparticles

NASA Astrophysics Data System (ADS)

Zhang, Xianhong; Zhao, Sidi; Wang, Fang; Ma, Yuhong; Wang, Li; Chen, Dong; Zhao, Changwen; Yang, Wantai

2017-05-01

Polymer based dielectric composites were fabricated through incorporation of core-shell structured BaTiO3 (BT) nanoparticles into PVDF matrix by means of solution blending. Core-shell structured BT nanoparticles with different shell composition and shell thickness were prepared by grafting methacrylate monomer (MMA or TFEMA) onto the surface of BT nanoparticles via surface initiated atom transfer radical polymerization (SI-ATRP). The content of the grafted polymer and the micro-morphology of the core-shell structured BT nanoparticles were investigated by thermo gravimetric analyses (TGA) and transmission electron microscopy (TEM), respectively. The dielectric properties were measured by broadband dielectric spectroscopy. The results showed that high dielectric constant and low dielectric loss are successfully realized in the polymer based composites. Moreover, the type of the grafted polymer and its content had different effect on the dielectric constant. In detail, the attenuation of dielectric constant was 16.6% for BT@PMMA1/PVDF and 10.7% for BT@PMMA2/PVDF composite in the range of 10 Hz to 100 kHz, in which the grafted content of PMMA was 5.5% and 8.0%, respectively. However, the attenuation of dielectric constant was 5.5% for BT@PTFEMA1/PVDF and 4.0% for BT@PTFEMA2/PVDF composite, in which the grafted content of PTFEMA was 1.5% and 2.0%, respectively. These attractive features of BT@PTFEMA/PVDF composites suggested that dielectric ceramic fillers modified with fluorinated polymer can be used to prepare high performance composites, especially those with low dielectric loss and high dielectric constant.

Study on Structural and Dielectric Properties of Ultra-Low-Fire Integratable Dielectric Film for High-Frequency and Microwave Application

NASA Astrophysics Data System (ADS)

Qu, Sheng; Zhang, Jihua; Wu, Kaituo; Wang, Lei; Chen, Hongwei

2018-03-01

In this study, ultra-low-fire ceramic composites of Zn2Te3O8-30 wt.%TiTe3O8 (ZTT) were prepared by a solid-state reaction method. Densified at 600°C, the best microwave dielectric properties at 8.5 GHz were measured with the ɛ r , tan δ, Q × f, and τ f as 25.6, 1.5 × 10-4, 56191 GHz and 1.66 ppm/°C, respectively. Thin films of ultra-low-fire ZTT were prepared by a radio-frequency magnetron sputtering method. ZTT films which deposited on Au/NiCr/SiO2/Si (100) substrates at 200°C showed good adhesion. From ultra-low-fire ceramic to ultra-low-fire ZTT thin films, the latter maintained all the good high-frequency dielectric properties of the former: high dielectric constant ( ɛ r ˜ 25) and low dissipation factor (tan δ < 5×10-3), low leakage current density (˜ 10-9 A/cm2) and ultra low processing temperature. These excellent properties of the ultra-low-fire ZTT thin film make it possible to be integrated in MMIC and be applied in the research of GaN and GaAs MOSFET devices.

Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

NASA Astrophysics Data System (ADS)

Taşçıoğlu, İ.; Tüzün Özmen, Ö.; Şağban, H. M.; Yağlıoğlu, E.; Altındal, Ş.

2017-04-01

In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by spin coating method. The electrical and dielectric analysis of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky barrier diode was conducted by means of capacitance-voltage ( C- V) and conductance-voltage ( G/ ω- V) measurements in the frequency range of 10 kHz-2 MHz. The C- V- f plots exhibit fairly large frequency dispersion due to excess capacitance caused by the presence of interface states ( N ss). The values of N ss located in semiconductor bandgap at the organic film/semiconductor interface were calculated by Hill-Coleman method. Experimental results show that dielectric constant ( ɛ') and dielectric loss ( ɛ″) decrease with increasing frequency, whereas loss tangent (tan δ) remains nearly the same. The decrease in ɛ' and ɛ″ was interpreted by the theory of dielectric relaxation due to interfacial polarization. It is also observed that ac electrical conductivity ( σ ac) and electric modulus ( M' and M″) increase with increasing frequency.

Molecular dynamics studies of a DNA-binding protein: 2. An evaluation of implicit and explicit solvent models for the molecular dynamics simulation of the Escherichia coli trp repressor.

PubMed Central

Guenot, J.; Kollman, P. A.

1992-01-01

Although aqueous simulations with periodic boundary conditions more accurately describe protein dynamics than in vacuo simulations, these are computationally intensive for most proteins. Trp repressor dynamic simulations with a small water shell surrounding the starting model yield protein trajectories that are markedly improved over gas phase, yet computationally efficient. Explicit water in molecular dynamics simulations maintains surface exposure of protein hydrophilic atoms and burial of hydrophobic atoms by opposing the otherwise asymmetric protein-protein forces. This properly orients protein surface side chains, reduces protein fluctuations, and lowers the overall root mean square deviation from the crystal structure. For simulations with crystallographic waters only, a linear or sigmoidal distance-dependent dielectric yields a much better trajectory than does a constant dielectric model. As more water is added to the starting model, the differences between using distance-dependent and constant dielectric models becomes smaller, although the linear distance-dependent dielectric yields an average structure closer to the crystal structure than does a constant dielectric model. Multiplicative constants greater than one, for the linear distance-dependent dielectric simulations, produced trajectories that are progressively worse in describing trp repressor dynamics. Simulations of bovine pancreatic trypsin were used to ensure that the trp repressor results were not protein dependent and to explore the effect of the nonbonded cutoff on the distance-dependent and constant dielectric simulation models. The nonbonded cutoff markedly affected the constant but not distance-dependent dielectric bovine pancreatic trypsin inhibitor simulations. As with trp repressor, the distance-dependent dielectric model with a shell of water surrounding the protein produced a trajectory in better agreement with the crystal structure than a constant dielectric model, and the physical properties of the trajectory average structure, both with and without a nonbonded cutoff, were comparable. PMID:1304396

Nonintrinsic origin of the colossal dielectric constants in Ca Cu3 Ti4 O12

NASA Astrophysics Data System (ADS)

Lunkenheimer, P.; Fichtl, R.; Ebbinghaus, S. G.; Loidl, A.

2004-11-01

The dielectric properties of CaCu3Ti4O12 , a material showing colossal values of the dielectric constant, were investigated over a broad temperature and frequency range extending up to 1.3GHz . A detailed equivalent-circuit analysis of the results and two crucial experiments, employing different types of contacts and varying the sample thickness were performed. The results provide clear evidence that the apparently high values of the dielectric constant in CaCu3Ti4O12 are nonintrinsic and due to electrode polarization effects. The intrinsic properties of CaCu3Ti4O12 are characterized by charge transport via hopping of localized charge carriers and a relatively high dielectric constant of the order of 100.

Giant dielectric constant dominated by Maxwell-Wagner relaxation in Al{sub 2}O{sub 3}/TiO{sub 2} nanolaminates synthesized by atomic layer deposition.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, W.; Auciello, O.; Premnath, R. N.

2010-01-01

Nanolaminates consisting of Al{sub 2}O{sub 3} and TiO{sub 2} oxide sublayers were synthesized by using atomic layer deposition to produce individual layers with atomic scale thickness control. The sublayer thicknesses were kept constant for each multilayer structure, and were changed from 50 to 0.2 nm for a series of different samples. Giant dielectric constant ({approx}1000) was observed when the sublayer thickness is less than 0.5 nm, which is significantly larger than that of Al{sub 2}O{sub 3} and TiO{sub 2} dielectrics. Detailed investigation revealed that the observed giant dielectric constant is originated from the Maxwell-Wagner type dielectric relaxation.

Synthesis, integration, and characterization of metal oxide films as alternative gate dielectric materials

NASA Astrophysics Data System (ADS)

Lin, You-Sheng

ZrO2 and HfO2 were investigated in this study to replace SiO2 as the potential gate dielectric materials in metal-oxide-semiconductor field effect transistors. ZrO2 and HfO2 films were deposited on p-type Si (100) wafers by an atomic layer chemical vapor deposition (ALCVD) process using zirconium (IV) t-butoxide and hafnium (IV) t-butoxide as the metal precursors, respectively. Oxygen was used alternatively with these metal alkoxide precursors into the reactor with purging and evacuation in between. The as-deposited ZrO2 and HfO2 films were stoichiometric and uniform based on X-ray photoemission spectroscopy and ellipsometry measurements. X-ray diffraction analysis indicated that the deposited films were amorphous, however, the high-resolution transmission electron microscopy showed an interfacial layer formation on the silicon substrate. Time-of-flight secondary ion mass spectrometry and medium energy ion scattering analysis showed significant intermixing between metal oxides and Si, indicating the formation of metal silicates, which were confirmed by their chemical etching resistance in HF solutions. The thermal stability of ZrO2 and HfO2 thin films on silicon was examined by monitoring their decomposition temperatures in ultra-high vacuum, using in-situ synchrotron radiation ultra-violet photoemission spectroscopy. The as-deposited ZrO2 and HfO2 thin films were thermally stable up to 880°C and 950°C in vacuum, respectively. The highest achieveable dielectric constants of as-deposited ZrO 2 and HfO2 were 21 and 24, respectively, which were slightly lower than the reported dielectric constants of bulk ZrO2 and HfO 2. These slight reductions in dielectric constants were attributed to the formation of the interfacial metal silicate layers. Very small hysteresis and interface state density were observed for both metal oxide films. Their leakage currents were a few orders of magnitude lower than that of SiO 2 at the same equivalent oxide thickness. NMOSFETs were also fabricated with the as-deposited metal oxide films, and reasonable ID-V D and IG-VG results were obtained. The electron mobilities were high from devices built using a plasma etching process to pattern the metal oxide films. However, they can be degraded if an HF wet etching process was used due to the large contact resistences. Upon oxygen annealing, the formation of SiOx at the interface improved the thermal stability of the as-deposited metal oxide films, however, lower overall dielectric constant and higher leakage current were observed. Upon ammonia annealing, the formation of SiOxNy improved not only the thermal stability but also reduced the leakage current. However, the overall dielectric constant of the film was still reduced due to the formation of the additional interfacial layer.

Microstructures and dielectric properties of CaCu3Ti4O12 ceramics via combustion method

NASA Astrophysics Data System (ADS)

Yuan, W. X.; Li, Z. J.

2012-01-01

CaCu3Ti4O12 (CCTO) powder was synthesized by the combustion method. The effect of sintering temperature was studied on dielectric properties of the prepared ceramic samples. They have the dielectric constant of ~31 000 and 80 000 for the grain size of 0.3 and 30-100 μm. It is unusual for CCTO with a grain size of 0.3 μm to have a dielectric constant of ~31 000. Their giant dielectric constant could be explained by a two-step internal-barrier-layer-capacitor model, associated with grain boundaries and domain boundaries. The existence of domain boundaries helped to explain the contradiction of the dielectric mechanisms between polycrystalline and single-crystal CCTO.

Dielectric and Excess Properties of Glycols with Formamide Binary Mixtures at Different Temperatures

NASA Astrophysics Data System (ADS)

Navarkhele, V. V.

2018-07-01

Dielectric constant measurements of glycol-formamide binary solutions with various concentrations have been carried out at different temperatures. The dielectric measurement has been achieved at 100 MHz frequency using a sensor which is based on frequency domain reflectomery technique. The excess dielectric constant, Kirkwood correlation factor and Bruggeman factor has also been reported for the binary mixtures. The results show that the dielectric constant of the mixtures increases with increase in the volume fraction of formamide and decreases with increase in temperature. The study also confirms the presence of intermolecular interaction, hydrogen bonding and orientation of the dipoles in the binary mixtures.

Functionalised graphene sheets as effective high dielectric constant fillers

PubMed Central

2011-01-01

A new functionalised graphene sheet (FGS) filled poly(dimethyl)siloxane insulator nanocomposite has been developed with high dielectric constant, making it well suited for applications in flexible electronics. The dielectric permittivity increased tenfold at 10 Hz and 2 wt.% FGS, while preserving low dielectric losses and good mechanical properties. The presence of functional groups on the graphene sheet surface improved the compatibility nanofiller/polymer at the interface, reducing the polarisation process. This study demonstrates that functionalised graphene sheets are ideal nanofillers for the development of new polymer composites with high dielectric constant values. PACS: 78.20.Ci, 72.80.Tm, 62.23.Kn PMID:21867505

Functionalised graphene sheets as effective high dielectric constant fillers

NASA Astrophysics Data System (ADS)

Romasanta, Laura J.; Hernández, Marianella; López-Manchado, Miguel A.; Verdejo, Raquel

2011-08-01

A new functionalised graphene sheet (FGS) filled poly(dimethyl)siloxane insulator nanocomposite has been developed with high dielectric constant, making it well suited for applications in flexible electronics. The dielectric permittivity increased tenfold at 10 Hz and 2 wt.% FGS, while preserving low dielectric losses and good mechanical properties. The presence of functional groups on the graphene sheet surface improved the compatibility nanofiller/polymer at the interface, reducing the polarisation process. This study demonstrates that functionalised graphene sheets are ideal nanofillers for the development of new polymer composites with high dielectric constant values. PACS: 78.20.Ci, 72.80.Tm, 62.23.Kn

A system for measuring complex dielectric properties of thin films at submillimeter wavelengths using an open hemispherical cavity and a vector network analyzer

NASA Astrophysics Data System (ADS)

Rahman, Rezwanur; Taylor, P. C.; Scales, John A.

2013-08-01

Quasi-optical (QO) methods of dielectric spectroscopy are well established in the millimeter and submillimeter frequency bands. These methods exploit standing wave structure in the sample produced by a transmitted Gaussian beam to achieve accurate, low-noise measurement of the complex permittivity of the sample [e.g., J. A. Scales and M. Batzle, Appl. Phys. Lett. 88, 062906 (2006);, 10.1063/1.2172403 R. N. Clarke and C. B. Rosenberg, J. Phys. E 15, 9 (1982);, 10.1088/0022-3735/15/1/002 T. M. Hirovnen, P. Vainikainen, A. Lozowski, and A. V. Raisanen, IEEE Trans. Instrum. Meas. 45, 780 (1996)], 10.1109/19.516996. In effect the sample itself becomes a low-Q cavity. On the other hand, for optically thin samples (films of thickness much less than a wavelength) or extremely low loss samples (loss tangents below 10-5) the QO approach tends to break down due to loss of signal. In such a case it is useful to put the sample in a high-Q cavity and measure the perturbation of the cavity modes. Provided that the average mode frequency divided by the shift in mode frequency is less than the Q (quality factor) of the mode, then the perturbation should be resolvable. Cavity perturbation techniques are not new, but there are technological difficulties in working in the millimeter/submillimeter wave region. In this paper we will show applications of cavity perturbation to the dielectric characterization of semi-conductor thin films of the type used in the manufacture of photovoltaics in the 100 and 350 GHz range. We measured the complex optical constants of hot-wire chemical deposition grown 1-μm thick amorphous silicon (a-Si:H) film on borosilicate glass substrate. The real part of the refractive index and dielectric constant of the glass-substrate varies from frequency-independent to linearly frequency-dependent. We also see power-law behavior of the frequency-dependent optical conductivity from 316 GHz (9.48 cm-1) down to 104 GHz (3.12 cm-1).

Dielectric and Raman spectroscopy of TlSe thin films

NASA Astrophysics Data System (ADS)

Ozel, Aysen E.; Deger, Deniz; Celik, Sefa; Yakut, Sahin; Karabak, Binnur; Akyüz, Sevim; Ulutas, Kemal

2017-12-01

In this report, the results of Dielectric and Raman spectroscopy of TlSe thin films are presented. The films were deposited in different thicknesses ranging from 290 Å to 3200 Å by thermal evaporation method. The relative permittivity (dielectric constant εr‧) and dielectric loss (εr″) of TlSe thin films were calculated by measuring capacitance (C) and dielectric loss factor (tan δ) in the frequencies ranging between 10-2 Hz-107 Hz and in the temperature ranging between 173 K and 433 K. In the given intervals, both the dielectric constant and the dielectric loss of TlSe thin films decrease with increasing frequency, but increase with increasing temperature. This behavior can be explained as multicomponent polarization in the structure. The ac conductivity obeys the ωs law when s (s < 1). The dielectric constant of TlSe thin films is determined from Dielectric and Raman spectroscopy measurements. The results obtained by two different methods are in agreement with each other.

Metal-free magnetic conductor substrates for placement-immune antenna assemblies

DOEpatents

Eubanks, Travis Wayne; Loui, Hung; McDonald, Jacob Jeremiah

2015-09-29

A magnetic conductor substrate produced for mounting to an antenna includes a sheet of dielectric lattice material having a length, a width and a thickness that is less than the length and less than the width. Within the sheet of dielectric lattice material is disposed an array of dielectric elements.

Quantum-dot size and thin-film dielectric constant: precision measurement and disparity with simple models.

PubMed

Grinolds, Darcy D W; Brown, Patrick R; Harris, Daniel K; Bulovic, Vladimir; Bawendi, Moungi G

2015-01-14

We study the dielectric constant of lead sulfide quantum dot (QD) films as a function of the volume fraction of QDs by varying the QD size and keeping the ligand constant. We create a reliable QD sizing curve using small-angle X-ray scattering (SAXS), thin-film SAXS to extract a pair-distribution function for QD spacing, and a stacked-capacitor geometry to measure the capacitance of the thin film. Our data support a reduced dielectric constant in nanoparticles.

Effect of Cold Temperature on the Dielectric Constant of Soil

DTIC Science & Technology

2012-04-01

explosive device (IED) threats is ground-penetrating radar ( GPR ). Proper development of GPR technology for this application requires a unique...success or failure of GPR as a detection technique. One soil property of interest to radar engineers is the dielectric constant. Previous...results to temperatures, moisture levels, and frequencies relevant to GPR systems. 2. Dielectric Constant and the Ring-resonator Concept The two

In-situ GPR test for three-dimensional mapping of the dielectric constant in a rock mass

NASA Astrophysics Data System (ADS)

Elkarmoty, Mohamed; Colla, Camilla; Gabrielli, Elena; Papeschi, Paolo; Bonduà, Stefano; Bruno, Roberto

2017-11-01

The Ground Penetrating Radar (GPR) is used to detect subsurface anomalies in several applications. The more the velocity of propagation or the dielectric constant is estimated accurately, the more the detection of anomalies at true subsurface depth can be accurately obtained. Since many GPR applications are performed in rock mass with non-homogeneous discontinuous nature, errors in estimating a bulk velocity of propagation or dielectric constant are possible. This paper presents a new in-situ GPR test for mapping the dielectric constant variability in a rock mass. The main aim is to investigate to what extent the dielectric constant is variable in the micro and macro scale of a typical rock mass and to give attention to GPR users in rock mass mediums. The methodology of this research is based on the insertion of steel rods in a rock mass, thus acting as reflectors. The velocity of propagation can be then modeled, from hyperbolic reflections, in the form of velocity pathways from antenna positions to a buried rod. Each pathway is characterized by discrete points which are assumed in three dimensions as centers of micro cubic rock mass. This allows converting the velocity of propagation into a dielectric constant for mapping and modeling the dielectric constant in a volumetric rock mass using a volumetric data visualization software program (Voxler). In a case study, 6 steel drilling rods were diagonally inserted in a vertical face of a bench in a sandstone quarry. Five equally spaced parallel lines, almost perpendicular to the orientations of the rods, were surveyed by a dual frequency GPR antenna of 200 and 600 MHz. The results show that the dielectric constant is randomly varied within the micro and macro scale either in single radargrams or in the volumetric rock mass. The proposed method can be useful if considered in signal processing software programs, particularly in presence of subsurface utilities with known geometry and dimension, allowing converting double travel time, through portions of a radargram, into more reliable depths using discrete dielectric constant values instead of one value for a whole radargram.

The preparation method of terahertz monolithic integrated device

NASA Astrophysics Data System (ADS)

Zhang, Cong; Su, Bo; He, Jingsuo; Zhang, Hongfei; Wu, Yaxiong; Zhang, Shengbo; Zhang, Cunlin

2018-01-01

The terahertz monolithic integrated device is to integrate the pumping area of the terahertz generation, the detection area of the terahertz receiving and the metal waveguide of terahertz transmission on the same substrate. The terahertz generation and detection device use a photoconductive antenna structure the metal waveguide use a microstrip line structure. The evanescent terahertz-bandwidth electric field extending above the terahertz transmission line interacts with, and is modified by, overlaid dielectric samples, thus enabling the characteristic vibrational absorption resonances in the sample to be probed. In this device structure, since the semiconductor substrate of the photoconductive antenna is located between the strip conductor and the dielectric layer of the microstrip line, and the semiconductor substrate cannot grow on the dielectric layer directly. So how to prepare the semiconductor substrate of the photoconductive antenna and how to bond the semiconductor substrate to the dielectric layer of the microstrip line is a key step in the terahertz monolithic integrated device. In order to solve this critical problem, the epitaxial wafer structure of the two semiconductor substrates is given and transferred to the desired substrate by two methods, respectively.

High-gradient compact linear accelerator

DOEpatents

Carder, B.M.

1998-05-26

A high-gradient linear accelerator comprises a solid-state stack in a vacuum of five sets of disc-shaped Blumlein modules each having a center hole through which particles are sequentially accelerated. Each Blumlein module is a sandwich of two outer conductive plates that bracket an inner conductive plate positioned between two dielectric plates with different thicknesses and dielectric constants. A third dielectric core in the shape of a hollow cylinder forms a casing down the series of center holes, and it has a dielectric constant different that the two dielectric plates that sandwich the inner conductive plate. In operation, all the inner conductive plates are charged to the same DC potential relative to the outer conductive plates. Next, all the inner conductive plates are simultaneously shorted to the outer conductive plates at the outer diameters. The signal short will propagate to the inner diameters at two different rates in each Blumlein module. A faster wave propagates quicker to the third dielectric core across the dielectric plates with the closer spacing and lower dielectric constant. When the faster wave reaches the inner extents of the outer and inner conductive plates, it reflects back outward and reverses the field in that segment of the dielectric core. All the field segments in the dielectric core are then in unipolar agreement until the slower wave finally propagates to the third dielectric core across the dielectric plates with the wider spacing and higher dielectric constant. During such unipolar agreement, particles in the core are accelerated with gradients that exceed twenty megavolts per meter. 10 figs.

High-gradient compact linear accelerator

DOEpatents

Carder, Bruce M.

1998-01-01

A high-gradient linear accelerator comprises a solid-state stack in a vacuum of five sets of disc-shaped Blumlein modules each having a center hole through which particles are sequentially accelerated. Each Blumlein module is a sandwich of two outer conductive plates that bracket an inner conductive plate positioned between two dielectric plates with different thicknesses and dielectric constants. A third dielectric core in the shape of a hollow cylinder forms a casing down the series of center holes, and it has a dielectric constant different that the two dielectric plates that sandwich the inner conductive plate. In operation, all the inner conductive plates are charged to the same DC potential relative to the outer conductive plates. Next, all the inner conductive plates are simultaneously shorted to the outer conductive plates at the outer diameters. The signal short will propagate to the inner diameters at two different rates in each Blumlein module. A faster wave propagates quicker to the third dielectric core across the dielectric plates with the closer spacing and lower dielectric constant. When the faster wave reaches the inner extents of the outer and inner conductive plates, it reflects back outward and reverses the field in that segment of the dielectric core. All the field segments in the dielectric core are then in unipolar agreement until the slower wave finally propagates to the third dielectric core across the dielectric plates with the wider spacing and higher dielectric constant. During such unipolar agreement, particles in the core are accelerated with gradients that exceed twenty megavolts per meter.

Dielectric characteristics of CaCu3Ti4O12/P(VDF-TrFE) nanocomposites

NASA Astrophysics Data System (ADS)

Zhang, Lin; Shan, Xiaobing; Wu, Peixuan; Cheng, Z.-Y.

2012-06-01

Composite thin film is highly desirable for the dielectric applications. In order to develop composite thin film, a nanocomposite, in which nanosized CaCu3Ti4O12 (CCTO) particles are used as filler and P(VDF-TrFE) 55/45 mol% copolymer is used as polymer matrix, is investigated. The contents of CCTO in the nanocomposites range from 0% to 50 vol%. The dielectric property of these nanocomposites was characterized at frequencies ranging from 100 Hz to 1 MHz and at temperatures ranging from 200 K to 370 K. A dielectric constant of 62 with a loss of 0.05 was obtained in nanocomposite with 50 vol% CCTO at room temperature at 1 kHz. At the phase transition temperature (˜340 K) of the copolymer, a dielectric constant of 150 with a loss less than 0.1 was obtained in this nanocomposite. It is found that the dielectric loss of the nanocomposites is dominated by the polymer which has a relaxation process. Comparing to composites made using microsized CCTO, the nanocomposites exhibit a much lower dielectric loss and a lower dielectric constant. This indicates that the nanosized CCTO particles have a lower dielectric constant than the microsized CCTO particles.

A full set of langatate high-temperature acoustic wave constants: elastic, piezoelectric, dielectric constants up to 900°C.

PubMed

Davulis, Peter M; da Cunha, Mauricio Pereira

2013-04-01

A full set of langatate (LGT) elastic, dielectric, and piezoelectric constants with their respective temperature coefficients up to 900°C is presented, and the relevance of the dielectric and piezoelectric constants and temperature coefficients are discussed with respect to predicted and measured high-temperature SAW propagation properties. The set of constants allows for high-temperature acoustic wave (AW) propagation studies and device design. The dielectric constants and polarization and conductive losses were extracted by impedance spectroscopy of parallel-plate capacitors. The measured dielectric constants at high temperatures were combined with previously measured LGT expansion coefficients and used to determine the elastic and piezoelectric constants using resonant ultrasound spectroscopy (RUS) measurements at temperatures up to 900°C. The extracted LGT piezoelectric constants and temperature coefficients show that e11 and e14 change by up to 62% and 77%, respectively, for the entire 25°C to 900°C range when compared with room-temperature values. The LGT high-temperature constants and temperature coefficients were verified by comparing measured and predicted phase velocities (vp) and temperature coefficients of delay (TCD) of SAW delay lines fabricated along 6 orientations in the LGT plane (90°, 23°, Ψ) up to 900°C. For the 6 tested orientations, the predicted SAW vp agree within 0.2% of the measured vp on average and the calculated TCD is within 9.6 ppm/°C of the measured value on average over the temperature range of 25°C to 900°C. By including the temperature dependence of both dielectric and piezoelectric constants, the average discrepancies between predicted and measured SAW properties were reduced, on average: 77% for vp, 13% for TCD, and 63% for the turn-over temperatures analyzed.

Molecular dynamics simulations to study the solvent influence on protein structure

NASA Astrophysics Data System (ADS)

Dominguez, Hector

2016-05-01

Molecular simulations were carried out to study the influence of different water models in two protein systems. Most of the solvents used in protein simulations, e.g., SPC/E or TIP3P, fail to reproduce the bulk water static dielectric constant. Recently a new water model, TIP4P/ɛ, which reproduces the experimental dielectric constant was reported. Therefore, simulations for two different proteins, Lysozyme and Ubiquitin with SPC/E, TIP3P and TIP4P/ɛ solvents were carried out. Dielectric constants and structural properties were calculated and comparisons were conducted. The structural properties between the three models are very similar, however, the dielectric constants are different in each case.

PLZT capacitor and method to increase the dielectric constant

DOEpatents

Taylor, Ralph S.; Fairchild, Manuel Ray; Balachjandran, Uthamalingam; Lee, Tae H.

2017-12-12

A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300.degree. C.

Chemically synthesis and characterization of MnS thin films by SILAR method

NASA Astrophysics Data System (ADS)

Yıldırım, M. Ali; Yıldırım, Sümeyra Tuna; Cavanmirza, İlke; Ateş, Aytunç

2016-03-01

MnS thin films were synthesized on glass substrates using SILAR method. The film thickness effect on structural, morphological, optical and electrical properties of the films was investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies showed that all the films exhibited polycrystalline nature with β-MnS structure and were covered well on glass substrates. The bandgap and resistivity values of the films decreased from 3.39 eV to 2.92 eV and from 11.84 × 106 to 2.21 × 105 Ω-cm as the film thickness increased from 180 to 350 nm, respectively. The refractive index (n) and dielectric constants (ɛo, ɛ∞) values were calculated.

Method for making surfactant-templated thin films

DOEpatents

Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hong You

2010-08-31

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Method for making surfactant-templated thin films

DOEpatents

Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hongyou

2002-01-01

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Giant Polarization Rotation in BiFeO3/SrTiO3 Thin Films.

NASA Astrophysics Data System (ADS)

Langner, M. C.; Chu, Y. H.; Martin, L. M.; Gajek, M.; Ramesh, R.; Orenstein, J.

2008-03-01

We use optical second harmonic generation to probe dynamics of the ferroelectric polarization in (111) oriented BiFeO3 thin films grown on SrTiO3 substrates. The second harmonic response indicates 3m point group symmetry and is consistent with a spontaneous polarization normal to the surface of the film. We measure large changes in amplitude and lowering of symmetry, consistent with polarization rotation, when modest electric fields are applied in the plane of the film. At room temperature the rotation is an order of magnitude larger than expected from reported values of the dielectric constant and increases further (as 1/T) as temperature is lowered. We propose a substrate interaction model to explain these results.

Let's Measure the Dielectric Constant of a Piece of Paper!

ERIC Educational Resources Information Center

Karlow, Edwin A.

1991-01-01

Described is a simple circuit with which students can observe the effect of common dielectric materials in a capacitor and measure the dielectric constant of a piece of paper. Discussed are the theory, apparatus construction, and experimental procedures for this activity. (CW)

Increase of dielectric constant in PVDF by incorporating La{sub 1.8}Sr{sub 0.2}NiO{sub 4} into its matrix

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Rajnish, E-mail: rajnish@iitp.ac.in; Goswami, Ashwin M., E-mail: ashwin.nanoplast@gmail.com; Kar, Manoranjan, E-mail: mano-iitg@yahoo.com

2016-05-06

To obtain the material with high dielectric constant and high dielectric strength for the technological applications, nanocomposite of Lanthanum Strontium Nickelete (La{sub 1.8}Sr{sub 0.2}NiO{sub 4}) as nanofiller and polyvinylidene fluoride (PVDF) as polymer matrix has been prepared. The different nanofiler weight concentration varies from 2-8 weight percent. X-ray diffraction technique confirms the phase formation of nanocomposite. Differential scanning calorimeter (DSC) has been employed to study the percentage of crystallinity and Impedance measurement has been carried out to study the dielectric constant. DSC analysis shows decreasing trend of crystallinity whereas impedance analysis gives increasing dielectric constant with increasing La{sub 1.8}Sr{sub 0.2}NiO{submore » 4} concentration in the nanocomposite. Also, these materials can be used as insulator in the transformer as the strength and dielectric behavior of present composite meets the technological requirements.« less

Quantification of the dielectric constant of single non-spherical nanoparticles from polarization forces: eccentricity effects.

PubMed

Gomila, G; Esteban-Ferrer, D; Fumagalli, L

2013-12-20

We analyze by means of finite-element numerical calculations the polarization force between a sharp conducting tip and a non-spherical uncharged dielectric nanoparticle with the objective of quantifying its dielectric constant from electrostatic force microscopy (EFM) measurements. We show that for an oblate spheroid nanoparticle of given height the strength of the polarization force acting on the tip depends linearly on the eccentricity, e, of the nanoparticle in the small eccentricity and low dielectric constant regimes (1 < e < 2 and 1 < ε(r) < 10), while for higher eccentricities (e > 2) the dependence is sub-linear and finally becomes independent of e for very large eccentricities (e > 30). These results imply that a precise account of the nanoparticle shape is required to quantify EFM data and obtain the dielectric constants of non-spherical dielectric nanoparticles. Experimental results obtained on polystyrene, silicon dioxide and aluminum oxide nanoparticles and on single viruses are used to illustrate the main findings.

Molecular Dynamics Evaluation of Dielectric-Constant Mixing Rules for H2O-CO2 at Geologic Conditions

PubMed Central

Mountain, Raymond D.; Harvey, Allan H.

2015-01-01

Modeling of mineral reaction equilibria and aqueous-phase speciation of C-O-H fluids requires the dielectric constant of the fluid mixture, which is not known from experiment and is typically estimated by some rule for mixing pure-component values. In order to evaluate different proposed mixing rules, we use molecular dynamics simulation to calculate the dielectric constant of a model H2O–CO2 mixture at temperatures of 700 K and 1000 K at pressures up to 3 GPa. We find that theoretically based mixing rules that depend on combining the molar polarizations of the pure fluids systematically overestimate the dielectric constant of the mixture, as would be expected for mixtures of nonpolar and strongly polar components. The commonly used semiempirical mixing rule due to Looyenga works well for this system at the lower pressures studied, but somewhat underestimates the dielectric constant at higher pressures and densities, especially at the water-rich end of the composition range. PMID:26664009

Molecular Dynamics Evaluation of Dielectric-Constant Mixing Rules for H2O-CO2 at Geologic Conditions.

PubMed

Mountain, Raymond D; Harvey, Allan H

2015-10-01

Modeling of mineral reaction equilibria and aqueous-phase speciation of C-O-H fluids requires the dielectric constant of the fluid mixture, which is not known from experiment and is typically estimated by some rule for mixing pure-component values. In order to evaluate different proposed mixing rules, we use molecular dynamics simulation to calculate the dielectric constant of a model H 2 O-CO 2 mixture at temperatures of 700 K and 1000 K at pressures up to 3 GPa. We find that theoretically based mixing rules that depend on combining the molar polarizations of the pure fluids systematically overestimate the dielectric constant of the mixture, as would be expected for mixtures of nonpolar and strongly polar components. The commonly used semiempirical mixing rule due to Looyenga works well for this system at the lower pressures studied, but somewhat underestimates the dielectric constant at higher pressures and densities, especially at the water-rich end of the composition range.

Encapsulation of the heteroepitaxial growth of wide band gap γ-CuCl on silicon substrates

NASA Astrophysics Data System (ADS)

Lucas, F. O.; O'Reilly, L.; Natarajan, G.; McNally, P. J.; Daniels, S.; Taylor, D. M.; William, S.; Cameron, D. C.; Bradley, A. L.; Miltra, A.

2006-01-01

γ-CuCl semiconductor material has been identified as a candidate material for the fabrication of blue-UV optoelectronic devices on Si substrates due to its outstanding electronic, lattice and optical properties. However, CuCl thin films oxidise completely into oxyhalides of Cu II within a few days of exposure to air. Conventional encapsulation of thin γ-CuCl by sealed glass at a deposition/curing temperature greater than 250 °C cannot be used because CuCl interacts chemically with Si substrates when heated above that temperature. In this study we have investigated the behaviour of three candidate dielectric materials for use as protective layers for the heteroepitaxial growth of γ-CuCl on Si substrates: SiO 2 deposited by plasma-enhanced chemical vapour deposition (PECVD), organic polysilsesquioxane-based spin on glass material (PSSQ) and cyclo olefin copolymer (COC) thermoplastic-based material. The optical properties (UV/Vis and IR) of the capped luminescent CuCl films were studied as a function of time, up to 28 days and compared with bare uncapped films. The results clearly show the efficiency of the protective layers. Both COC and the PSSQ layer prevented CuCl film from oxidising while SiO 2 delayed the effect of oxidation. The dielectric constant of the three protective layers was evaluated at 1 MHz to be 2.3, 3.6 and 6.9 for C0C, SiO 2 and PSSQ, respectively.

Examination of Effective Dielectric Constants Derived from Non-Spherical Melting Hydrometeor

NASA Astrophysics Data System (ADS)

Liao, L.; Meneghini, R.

2009-04-01

The bright band, a layer of enhanced radar echo associated with melting hydrometeors, is often observed in stratiform rain. Understanding the microphysical properties of melting hydrometeors and their scattering and propagation effects is of great importance in accurately estimating parameters of the precipitation from spaceborne radar and radiometers. However, one of the impediments in the study of the radar signature of the melting layer is the determination of effective dielectric constants of melting hydrometeors. Although a number of mixing formulas are available to compute the effective dielectric constants, their results vary to a great extent when water is a component of the mixture, such as in the case of melting snow. It is also physically unclear as to how to select among these various formulas. Furthermore, the question remains as to whether these mixing formulas can be applied to computations of radar polarimetric parameters from non-spherical melting particles. Recently, several approaches using numerical methods have been developed to derive the effective dielectric constants of melting hydrometeors, i.e., mixtures consisting of air, ice and water, based on more realistic melting models of particles, in which the composition of the melting hydrometeor is divided into a number of identical cells. Each of these cells is then assigned in a probabilistic way to be water, ice or air according to the distribution of fractional water contents for a particular particle. While the derived effective dielectric constants have been extensively tested at various wavelengths over a range of particle sizes, these numerical experiments have been restricted to the co-polarized scattering parameters from spherical particles. As polarimetric radar has been increasingly used in the study of microphysical properties of hydrometeors, an extension of the theory to polarimetric variables should provide additional information on melting processes. To account for polarimetric radar measurements from melting hydrometeors, it is necessary to move away from the restriction that the melting particles are spherical. In this study, our primary focus is on the derivation of the effective dielectric constants of non-spherical particles that are mixtures of ice and water. The computational model for the ice-water particle is described by a collection of 128x128x128 cubic cells of identical size. Because of the use of such a high-resolution model, the particles can be described accurately not only with regard to shape but with respect to structure as well. The Cartesian components of the mean internal electric field of particles, which are used to infer the effective dielectric constants, are calculated at each cell by the use of the Conjugate Gradient-Fast Fourier Transform (CG-FFT) numerical method. In this work we first check the validity of derived effective dielectric constant from a non-spherical mixed phase particle by comparing the polarimetric scattering parameters of an ice-water spheroid obtained from the CGFFT to those computed from the T-matrix for a homogeneous particle with the same geometry as that of the mixed phase particle (such as size, shape and orientation) and with an effective dielectric constant derived from the internal field of the mixed-phase particle. The accuracy of the effective dielectric constant can be judged by whether the scattering parameters of interest can accurately reproduce those of the exact solution, i.e., the T-matrix results. The purpose of defining an effective dielectric constant is to reduce the complexity of the scattering calculations in the sense that the effective dielectric constant, once obtained, may be applicable to a range of particle sizes, shapes and orientations. Conversely, if a different effective dielectric constant is needed for each particle size or shape, then its utility would be marginal. Having verified that the effective dielectric constant defined for a particular particle with a fixed shape, size, and orientation is valid, a check is performed to see if this effective dielectric constant can be used to characterize a class of particle types (with arbitrary sizes, shapes and orientations) if the fractional ice-water contents of melting particles remain the same. Among the scattering and polarimatric parameters used for examination of effective dielectric constant in this study, are the radar backscattering, extinction and scattering coefficients, asymmetry factor, differential reflectivity factor (ZDR), phase shift and linear polarization ratio (LDR). The goal is to determine whether the effective dielectric constant approach provides a means to compute accurately the radar polarimetric scattering parameters and radiometer brightness temperature quantities from the melting layer in a relatively simple and efficient way.

Absolute Thickness Measurements on Coatings Without Prior Knowledge of Material Properties Using Terahertz Energy

NASA Technical Reports Server (NTRS)

Roth, Don J.; Cosgriff, Laura M.; Harder, Bryan; Zhu, Dongming; Martin, Richard E.

2013-01-01

This study investigates the applicability of a novel noncontact single-sided terahertz electromagnetic measurement method for measuring thickness in dielectric coating systems having either dielectric or conductive substrate materials. The method does not require knowledge of the velocity of terahertz waves in the coating material. The dielectric coatings ranged from approximately 300 to 1400 m in thickness. First, the terahertz method was validated on a bulk dielectric sample to determine its ability to precisely measure thickness and density variation. Then, the method was studied on simulated coating systems. One simulated coating consisted of layered thin paper samples of varying thicknesses on a ceramic substrate. Another simulated coating system consisted of adhesive-backed Teflon adhered to conducting and dielectric substrates. Alumina samples that were coated with a ceramic adhesive layer were also investigated. Finally, the method was studied for thickness measurement of actual thermal barrier coatings (TBC) on ceramic substrates. The unique aspects and limitations of this method for thickness measurements are discussed.

Low-Thermal-Expansion Filled Polytetrafluoroethylene

NASA Technical Reports Server (NTRS)

Shapiro, Sanford S.

1989-01-01

PTFE made thermally compatible with aluminum without changing dielectric constant. Manufactured with fillers and pores to reduce coefficient of thermal expansion by factor of 6 to match aluminum. Material retains 2.1 dielectric constant of pure PTFE. Combines filler and micropore concepts. Particles and voids embedded in PTFE matrix function cooperatively. Particles take up compressive stress imposed by contracting PTFE, and voids take up expanding material. Increases dielectric constant, while voids reduce it.

Optical properties of micro and nano LiNbO3 thin film prepared by spin coating

NASA Astrophysics Data System (ADS)

Fakhri, Makram A.; Salim, Evan T.; Abdulwahhab, Ahmed W.; Hashim, U.; Salim, Zaid T.

2018-07-01

This paper deals with preparing of Lithium-Niobate thin films based on Sol-Gel technique on a substrate made of quartz, samples have been deposited under three different stirrer times. At 3000 round per minute of spin coating strategy, the deposition processes have been accomplished. The results showed an enhancement in the crystalline structure of the prepared samples with increasing the duration of stirrer time. The AFM measurement has assured that the structure of the prepared samples is more regular distributed, homogeneous and crack-free in their structures. Further, measurements and calculations of lattice constant, energy band gap, refractive index, and optical dielectric constant are also considered and agreed with experimental data collected by the characterized samples.

Correlations of structural, magnetic, and dielectric properties of undoped and doped CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Krohns, S.; Lu, J.; Lunkenheimer, P.; Brizé, V.; Autret-Lambert, C.; Gervais, M.; Gervais, F.; Bourée, F.; Porcher, É. F.; Loidl, A.

2009-11-01

The present work reports synthesis, as well as a detailed and careful characterization of structural, magnetic, and dielectric properties of differently tempered undoped and doped CaCu3Ti4O12 (CCTO) ceramics. For this purpose, neutron and X-ray powder diffraction, SQUID measurements, and dielectric spectroscopy have been performed. Mn-, Fe-, and Ni-doped CCTO ceramics were investigated in great detail to document the influence of low-level doping with 3d metals on the antiferromagnetic structure and dielectric properties. In the light of possible magnetoelectric coupling in these doped ceramics, the dielectric measurements were also carried out in external magnetic fields up to 7 T. At low temperatures the dielectric constant shows a minor but significant dependence on the applied magnetic field. Undoped CCTO is well-known for its colossal dielectric constant in a broad frequency and temperature range. With the present extended characterization of doped as well as undoped CCTO, we want to address the question why doping with only 1% Mn or 0.5% Fe decreases the room-temperature dielectric constant of CCTO by a factor of ~100 with a concomitant reduction of the conductivity, whereas 0.5% Ni doping changes the dielectric properties only slightly. In addition, diffraction experiments and magnetic investigations were undertaken to check for possible correlations of the magnitude of the colossal dielectric constants with structural details or with magnetic properties like the magnetic ordering, the Curie-Weiss temperatures, or the paramagnetic moment. It is revealed, that while the magnetic ordering temperature and the effective moment of all investigated CCTO ceramics are rather similar, there is a dramatic influence of doping and tempering time on the Curie-Weiss constant.

THE STUDY OF HIGH DIELECTRIC CONSTANT MECHANISM OF La-DOPED Ba0.67Sr0.33TiO3 CERAMICS

NASA Astrophysics Data System (ADS)

Xu, Jing; He, Bo; Liu, Han Xing

It is a common and effective method to enhance the dielectric properties of BST ceramics by adding rare-earth elements. In this paper, it is important to analyze the cause of the high dielectric constant behavior of La-doped BST ceramics. The results show that proper rare earth La dopant (0.2≤x≤0.7) may greatly increase the dielectric constant of BST ceramics, and also improve the temperature stability, evidently. According to the current-voltage (J-V) characteristics, the proper La-doped BST ceramics may reach the better semiconductivity, with the decrease and increase in La doping, the ceramics are insulators. By using the Schottky barrier model and electric microstructure model to find the surface or grain boundary potential barrier height, the width of the depletion layer and grain size do play an important role in impacting the dielectric constant.

Viking landing sites, remote-sensing observations, and physical properties of Martian surface materials

USGS Publications Warehouse

Moore, H.J.; Jakosky, B.M.

1989-01-01

Important problems that confront future scientific exploration of Mars include the physical properties of Martian surface materials and the geologic processes that formed the materials. The design of landing spacecraft, roving vehicles, and sampling devices and the selection of landing sites, vehicle traverses, and sample sites will be, in part, guided by the physical properties of the materials. Four materials occur in the sample fields of the Viking landers: (1) drift, (2) crusty to cloddy, (3) blocky, and (4) rock. The first three are soillike. Drift materials is weak, loose, and porous. We estimate that it has a dielectric constant near 2.4 and a thermal inertia near 1 ?? 10-3 to 3 ?? 10-3 (cal cm-2 sec 1 2 K-1) because of its low bulk density, fine grain size, and small cohesion. Crusty to cloddy material is expected to have a dielectric constant near 2.8 and a thermal inertia near 4 ?? 10-3 to 7 ?? 10-3 because of its moderate bulk density and cementation of grains. Blocky material should have a dielectric constant near 3.3 and a thermal inertia near 7 ?? 10-3 to 9 ?? 10-3 because of its moderate bulk density and cementation. Common basaltic rocks have dielectric constans near 8 and thermal inertias near 30 ?? 10-3 to 60 ?? 10-3. Comparisons of estimated dielectric constants and thermal inertias of the materials at the landing sites with those obtained remotely by Earth-based radars and Viking Orbiter thermal sensors suggest that the materials at the landing sites are good analogs for materials elsewhere on Mars. Correlation of remotely estimated dielectric constant and thermal inertias indicates two modal values for paired values of dielectric constants and thermal inertias near (A) 2 and 2 ?? 10-3 and (B) 3 and 6 ?? 10-3, respectively. These two modes are comparable to the dielectric constants and thermal inertias for drift and crusty to cloddy material, respectively. Dielectric constants and thermal inertias for blocky material are larger but conistent with values in the northern plains. Our interprertations are compatible with an aeolian origin for drift and similar materials elsewhere on Mars. The postulate that moderate dielectric constants and thermal inertias larger than 3 or 4 ?? 10-3 are produced by cementation of soillike materials is partly consistent with the data. The average dielectric constant and thermal inertia and their correlation with one another suggest that most of the surface of Mars should present few difficulties to future surface exploration, but some surfaces may present difficulties for spacecraft that are not suitably designed. ?? 1989.

Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films

NASA Astrophysics Data System (ADS)

Scarel, G.; Ferrari, S.; Spiga, S.; Wiemer, C.; Tallarida, G.; Fanciulli, M.

2003-07-01

Zirconium dioxide films are grown in 200 atomic layer deposition cycles. Zirconium tetrachloride (ZrCl4) and water (H2O) are used as precursors. A relatively high dielectric constant (κ=22), wide band gap, and conduction band offset (5.8 and 1.4 eV, respectively) indicate that zirconium dioxide is a most promising substitute for silicon dioxide as a dielectric gate in complementary metal-oxide-semiconductor devices. However, crystallization and chlorine ions in the films might affect their electrical properties. These ions are produced during atomic layer deposition in which the ZrCl4 precursor reacts with the growth surface. It is desirable to tune the composition, morphology, and structural properties in order to improve their benefit on the electrical ones. To address this issue it is necessary to properly choose the growth parameters. This work focuses on the effects of the growth temperature Tg. ZrO2 films are grown at different substrate temperatures: 160, 200, 250, and 350 °C. Relevant modification of the film structure with a change in substrate temperature during growth is expected because the density of reactive sites [mainly Si+1-(OH)-1 bonds] decreases with an increase in temperature [Y. B. Kim et al., Electrochem. Solid-State Lett. 3, 346 (2000)]. The amorphous film component, for example, that develops at Si+1-(OH)-1 sites on the starting growth surface, is expected to decrease with an increase in growth temperature. The size and consequences of film property modifications with the growth temperature are investigated in this work using x-ray diffraction and reflectivity, and atomic force microscopy. Time of flight-secondary ion mass spectrometry is used to study contaminant species in the films. From capacitance-voltage (CV) and current-voltage (IV) measurements, respectively, the dielectric constant κZrO2 and the leakage current are studied as a function of the film growth temperature.

Light induced dielectric constant of Alumina doped lead silicate glass based on silica sands

NASA Astrophysics Data System (ADS)

Diantoro, Markus; Natalia, Desi Ayu; Mufti, Nandang; Hidayat, Arif

2016-04-01

Numerous studies on glass ceramic compounds have been conducted intensively. Two major problems to be solved are to simplify the fabrication process by reducing melting temperature as well as improving various properties for various fields of technological application. To control the dielectric constant, the researchers generally use a specific dopant. So far there is no comprehensive study to control the dielectric constant driven by both of dopant and light intensity. In this study it is used Al2O3 dopant to increase the light induced dielectric constant of the glass. The source of silica was taken from local silica sands of Bancar Tuban. The sands were firstly leached using hydrochloric acid to improve the purity of silica which was investigated by means of XRF. Fabricating the glass samples were performed by using melting-glass method. Silica powder was mixed with various ratio of SiO2:Na2CO3:PbO:Al2O3. Subsequently, a mixture of various Al2O3 doped lead silicate glasses were melted at 970°C and directy continued by annealed at 300°C. The samples were investigated by XRD, FTIR, SEM-EDX and measuring dielectric constant was done using dc-capacitance meter with various light intensities. The investigation result of XRD patterns showed that the crystal structures of the samples are amorphous state. The introduction of Al2O3 does not alter the crystal structure, but significantly change the structure of the functional glass bonding PbO-SiO2 which was shown by the FTIR spectra. It was noted that some new peak peaks were exist in the doped samples. Measuring result of dielectricity shows that the dielectric constant of glass increases with the addition of Al2O3. Increasing the light intensity gives rise to increase their dielectric constant in general. A detail observation of the dielectric seen that there are discontinuous step-like of dielectric. Most likely a specific quantization mechanism occurs when glass exposed under light.

Strongly nonlinear composite dielectrics: A perturbation method for finding the potential field and bulk effective properties

NASA Astrophysics Data System (ADS)

Blumenfeld, Raphael; Bergman, David J.

1991-10-01

A class of strongly nonlinear composite dielectrics is studied. We develop a general method to reduce the scalar-potential-field problem to the solution of a set of linear Poisson-type equations in rescaled coordinates. The method is applicable for a large variety of nonlinear materials. For a power-law relation between the displacement and the electric fields, it is used to solve explicitly for the value of the bulk effective dielectric constant ɛe to second order in the fluctuations of its local value. A simlar procedure for the vector potential, whose curl is the displacement field, yields a quantity analogous to the inverse dielectric constant in linear dielectrics. The bulk effective dielectric constant is given by a set of linear integral expressions in the rescaled coordinates and exact bounds for it are derived.

Microwave dielectric properties of boreal forest trees

NASA Technical Reports Server (NTRS)

Xu, G.; Ahern, F.; Brown, J.

1993-01-01

The knowledge of vegetation dielectric behavior is important in studying the scattering properties of the vegetation canopy and radar backscatter modelling. Until now, a limited number of studies have been published on the dielectric properties in the boreal forest context. This paper presents the results of the dielectric constant as a function of depth in the trunks of two common boreal forest species: black spruce and trembling aspen, obtained from field measurements. The microwave penetration depth for the two species is estimated at C, L, and P bands and used to derive the equivalent dielectric constant for the trunk as a whole. The backscatter modelling is carried out in the case of black spruce and the results are compared with the JPL AIRSAR data. The sensitivity of the backscatter coefficient to the dielectric constant is also examined.

Design of WLAN microstrip antenna for 5.17 - 5.835 GHz

NASA Astrophysics Data System (ADS)

Bugaj, Jarosław; Bugaj, Marek; Wnuk, Marian

2017-04-01

This paper presents the project of miniaturized WLAN Antenna made in microstrip technique working at a frequency of 5.17 - 5.835 GHz in 802.11ac IEEE standard. This dual layer antenna is designed on RT/duroid 5870 ROGERS CORPORATION substrate with dielectric constant 2.33 and thickness of 3.175 mm. The antenna parameters such as return loss, VSWR, gain and directivity are simulated and optimized using commercial computer simulation technology microwave studio (CST MWS). The paper presents the results of discussed numerical analysis.

Imaging performance of an isotropic negative dielectric constant slab.

PubMed

Shivanand; Liu, Huikan; Webb, Kevin J

2008-11-01

The influence of material and thickness on the subwavelength imaging performance of a negative dielectric constant slab is studied. Resonance in the plane-wave transfer function produces a high spatial frequency ripple that could be useful in fabricating periodic structures. A cost function based on the plane-wave transfer function provides a useful metric to evaluate the planar slab lens performance, and using this, the optimal slab dielectric constant can be determined.

An improved model for the dielectric constant of sea water at microwave frequencies

NASA Technical Reports Server (NTRS)

Klein, L. A.; Swift, C. T.

1977-01-01

The advent of precision microwave radiometry has placed a stringent requirement on the accuracy with which the dielectric constant of sea water must be known. To this end, measurements of the dielectric constant have been conducted at S-band and L-band with a quoted uncertainty of tenths of a percent. These and earlier results are critically examined, and expressions are developed which will yield computations of brightness temperature having an error of no more than 0.3 K for an undisturbed sea at frequencies lower than X-band. At the higher microwave and millimeter wave frequencies, the accuracy is in question because of uncertainties in the relaxation time and the dielectric constant at infinite frequency.

Study of Some Dielectric Properties of Suspensions of Magnesium Particles in Mineral Oil

NASA Technical Reports Server (NTRS)

Altshuller, Aubrey P

1954-01-01

The variation of dielectric constant has been measured as a function of the concentration of magnesium particles; the shape, size, and degree of oxidation of the particles; the temperature; and the frequency of oscillation. The variation of dielectric constant and settling rate was investigated as a function of time. Also investigated were the effects of particle concentration, shape and time on dielectric losses.

Preparation of a Carbon Doped Tissue-Mimicking Material with High Dielectric Properties for Microwave Imaging Application

PubMed Central

Lan, Siang-Wen; Weng, Min-Hang; Yang, Ru-Yuan; Chang, Shoou-Jinn; Chung, Yaoh-Sien; Yu, Tsung-Chih; Wu, Chun-Sen

2016-01-01

In this paper, the oil-in-gelatin based tissue-mimicking materials (TMMs) doped with carbon based materials including carbon nanotube, graphene ink or lignin were prepared. The volume percent for gelatin based mixtures and oil based mixtures were both around 50%, and the doping amounts were 2 wt %, 4 wt %, and 6 wt %. The effect of doping material and amount on the microwave dielectric properties including dielectric constant and conductivity were investigated over an ultra-wide frequency range from 2 GHz to 20 GHz. The coaxial open-ended reflection technology was used to evaluate the microwave dielectric properties. Six measured values in different locations of each sample were averaged and the standard deviations of all the measured dielectric properties, including dielectric constant and conductivity, were less than one, indicating a good uniformity of the prepared samples. Without doping, the dielectric constant was equal to 23 ± 2 approximately. Results showed with doping of carbon based materials that the dielectric constant and conductivity both increased about 5% to 20%, and the increment was dependent on the doping amount. By proper selection of doping amount of the carbon based materials, the prepared material could map the required dielectric properties of special tissues. The proposed materials were suitable for the phantom used in the microwave medical imaging system. PMID:28773678

Effect of Bi doping on morphotropic phase boundary and dielectric properties of PZT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, Shraddha; Acharya, Smita, E-mail: saha275@yahoo.com

2016-05-23

In our present attempt, Pb{sub (1-x)}Bi{sub x}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} [PBZT] {where x = 0, 0.05, 0.1} is synthesized by sol-gel route. Effect of Bi addition on structure, sinterability and dielectric properties are observed. The presence of morphotropic phase boundary (coexistence of tetragonal and rhombohedral symmetry) is confirmed by X-ray diffraction. Enhancement of sinterability after Bi doping is observed through a systematic sintering program. Frequency and temperature dependent dielectric constant are studied. Bi doping in PZT is found to enhance room temperature dielectric constant. However, at high temperature the dielectric constant of pure PZT is more than that of dopedmore » PZT.« less

Dielectric properties of single wall carbon nanotubes-based gelatin phantoms

NASA Astrophysics Data System (ADS)

Altarawneh, M. M.; Alharazneh, G. A.; Al-Madanat, O. Y.

In this work, we report the dielectric properties of Single wall Carbon Nanotubes (SWCNTs)-based phantom that is mainly composed of gelatin and water. The fabricated gelatin-based phantom with desired dielectric properties was fabricated and doped with different concentrations of SWCNTs (e.g., 0%, 0.05%, 0.10%, 0.15%, 0.2%, 0.4% and 0.6%). The dielectric constants (real ɛ‧ and imaginary ɛ‧‧) were measured at different positions for each sample as a function of frequency (0.5-20GHz) and concentrations of SWCNTs and their averages were found. The Cole-Cole plot (ɛ‧ versus ɛ‧‧) was obtained for each concentration of SWCNTs and was used to obtain the static dielectric constant ɛs, the dielectric constant at the high limit of frequency ɛ∞ and the average relaxation time τ. The measurements showed that the fabricated samples are in good homogeneity and the SWCNTs are dispersed well in the samples as an acceptable standard deviation is achieved. The study showed a linear increase in the static dielectric constant ɛs and invariance of the average relaxation time τ and the value of ɛ∞ at room temperature for the investigated concentrations of SWCNTs.

Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites.

PubMed

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D; Hill, Curtis W; Brewer, Jeffrey C; Tucker, Dennis S; Cheng, Z-Y

2016-10-21

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu 3 Ti 4 O 12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced-up to about 10 times - by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10 -1 ). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing.

Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites

NASA Astrophysics Data System (ADS)

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D.; Hill, Curtis W.; Brewer, Jeffrey C.; Tucker, Dennis S.; Cheng, Z.-Y.

2016-10-01

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu3Ti4O12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced-up to about 10 times - by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10-1). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing.

In-situ preparation of hierarchical flower-like TiO2/carbon nanostructures as fillers for polymer composites with enhanced dielectric properties

PubMed Central

Xu, Nuoxin; Zhang, Qilong; Yang, Hui; Xia, Yuting; Jiang, Yongchang

2017-01-01

Novel three-dimensional hierarchical flower-like TiO2/carbon (TiO2/C) nanostructures were in-situ synthesized via a solvothermal method involving calcination of organic precursor under inert atmosphere. The composite films comprised of P (VDF-HFP) and as-prepared hierarchical flower-like TiO2/C were fabricated by a solution casting and hot-pressing approach. The results reveal that loading the fillers with a small amount of carbon is an effective way to improve the dielectric constant and suppress the dielectric loss. In addition, TiO2/C particles with higher carbon contents exhibit superiority in promoting the dielectric constants of composites when compared with their noncarbon counterparts. For instance, the highest dielectric constant (330.6) of the TiO2/C composites is 10 times over that of noncarbon-TiO2-filled ones at the same filler volume fraction, and 32 times over that of pristine P (VDF-HFP). The enhancement in the dielectric constant can be attributed to the formation of a large network, which is composed of local micro-capacitors with carbon particles as electrodes and TiO2 as the dielectric in between. PMID:28262766

Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites

PubMed Central

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D.; Hill, Curtis W.; Brewer, Jeffrey C.; Tucker, Dennis S.; Cheng, Z.-Y.

2016-01-01

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu3Ti4O12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced–up to about 10 times – by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10−1). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing. PMID:27767184

Approach to Fabricate Rigid Substrate for 2.4 GHz Inverted-F Antenna Using a Room Temperature Curable Dielectric Ink on Photo and Nanopaper

NASA Astrophysics Data System (ADS)

Sowpati, A. K.; Nelo, M.; Varghese, J.; Liimatainen, H.; Visanko, M.; Sebastian, M. T.; Jantunen, H.

2018-05-01

The effect of a room temperature curable dielectric ink (ZrSiO4) printed on commercial photo paper and prepared nanopaper on the dielectric properties at 2.4 GHz are studied. In both cases, the dielectric layer decreased the relative permittivity and dielectric loss and made the flexible substrates rigid. For the nanopaper, the permittivity decreased from 4.7 to 3.57 and the loss value from 0.12 to 0.04. The measured decreases for the photo paper were from 3.12 to 2.61 and from 0.09 to 0.05, respectively. In the performance of the simulated and fabricated inverted-F antennas, the effect of the dielectric layer could be observed in the decrease of its frequency with about 130 MHz mainly due to the thicker substrate. The measured total efficiency and gain were 83% and 3.4 dB. The proposed approach could be in the future used for further development of the antenna by modification of the dielectric ink with different additives.

Approach to Fabricate Rigid Substrate for 2.4 GHz Inverted-F Antenna Using a Room Temperature Curable Dielectric Ink on Photo and Nanopaper

NASA Astrophysics Data System (ADS)

Sowpati, A. K.; Nelo, M.; Varghese, J.; Liimatainen, H.; Visanko, M.; Sebastian, M. T.; Jantunen, H.

2018-07-01

The effect of a room temperature curable dielectric ink (ZrSiO4) printed on commercial photo paper and prepared nanopaper on the dielectric properties at 2.4 GHz are studied. In both cases, the dielectric layer decreased the relative permittivity and dielectric loss and made the flexible substrates rigid. For the nanopaper, the permittivity decreased from 4.7 to 3.57 and the loss value from 0.12 to 0.04. The measured decreases for the photo paper were from 3.12 to 2.61 and from 0.09 to 0.05, respectively. In the performance of the simulated and fabricated inverted-F antennas, the effect of the dielectric layer could be observed in the decrease of its frequency with about 130 MHz mainly due to the thicker substrate. The measured total efficiency and gain were 83% and 3.4 dB. The proposed approach could be in the future used for further development of the antenna by modification of the dielectric ink with different additives.

Constant fields and constant gradients in open ionic channels.

PubMed Central

Chen, D P; Barcilon, V; Eisenberg, R S

1992-01-01

Ions enter cells through pores in proteins that are holes in dielectrics. The energy of interaction between ion and charge induced on the dielectric is many kT, and so the dielectric properties of channel and pore are important. We describe ionic movement by (three-dimensional) Nemst-Planck equations (including flux and net charge). Potential is described by Poisson's equation in the pore and Laplace's equation in the channel wall, allowing induced but not permanent charge. Asymptotic expansions are constructed exploiting the long narrow shape of the pore and the relatively high dielectric constant of the pore's contents. The resulting one-dimensional equations can be integrated numerically; they can be analyzed when channels are short or long (compared with the Debye length). Traditional constant field equations are derived if the induced charge is small, e.g., if the channel is short or if the total concentration gradient is zero. A constant gradient of concentration is derived if the channel is long. Plots directly comparable to experiments are given of current vs voltage, reversal potential vs. concentration, and slope conductance vs. concentration. This dielectric theory can easily be tested: its parameters can be determined by traditional constant field measurements. The dielectric theory then predicts current-voltage relations quite different from constant field, usually more linear, when gradients of total concentration are imposed. Numerical analysis shows that the interaction of ion and channel can be described by a mean potential if, but only if, the induced charge is negligible, that is to say, the electric field is spatially constant. Images FIGURE 1 PMID:1376159

Direct growth of graphene-dielectric bi-layer structure on device substrates from Si-based polymer

NASA Astrophysics Data System (ADS)

Seo, Hong-Kyu; Kim, Kyunghun; Min, Sung-Yong; Lee, Yeongjun; Eon Park, Chan; Raj, Rishi; Lee, Tae-Woo

2017-06-01

To facilitate the utilization of graphene films in conventional semiconducting devices (e.g. transistors and memories) which includes an insulating layer such as gate dielectric, facile synthesis of bi-layers composed of a graphene film and an insulating layer by one-step thermal conversion will be very important. We demonstrate a simple, inexpensive, scalable and patternable process to synthesize graphene-dielectric bi-layer films from solution-processed polydimethylsiloxane (PDMS) under a Ni capping layer. This method fabricates graphene-dielectric bi-layer structure simultaneously directly on substrate by thermal conversion of PDMS without using additional graphene transfer and patterning process or formation of an expensive dielectric layer, which makes the device fabrication process much easier. The graphene-dielectric bi-layer on a conducting substrate was used in bottom-contact pentacene field-effect transistors that showed ohmic contact and small hysteresis. Our new method will provide a way to fabricate flexible electronic devices simply and inexpensively.

L-band Dielectric Constant Measurements of Seawater (Oral presentation and SMOS Poster)

NASA Technical Reports Server (NTRS)

Lang, Roger H.; Utku, Cuneyt; LeVine, David M.

2003-01-01

This paper describes a resonant cavity technique for the measurement of the dielectric constant of seawater as a function of its salinity. Accurate relationships between salinity and dielectric constant (which determines emissivity) are needed for sensor systems such as SMOS and Aquarius that will monitor salinity from space in the near future. The purpose of the new measurements is to establish the dependence of the dielectric constant of seawater on salinity in contemporary units (e.g. psu) and to take advantage of modern instrumentation to increase the accuracy of these measurements. The measurement device is a brass cylindrical cavity 16cm in diameter and 7cm in height. The seawater is introduced into the cavity through a slender glass tube having an inner diameter of 0.1 mm. By assuming that this small amount of seawater slightly perturbs the internal fields in the cavity, perturbation theory can be employed. A simple formula results relating the real part of the dielectric constant to the change in resonant frequency of the cavity. In a similar manner, the imaginary part of the dielectric constant is related to the change in the cavity s Q. The expected accuracy of the cavity technique is better than 1% for the real part and 1 to 2% for the imaginary part. Presently, measurements of methanol have been made and agree with precision measurements in the literature to within 1% in both real and imaginary parts. Measurements have been made of the dielectric constant of seawater samples from Ocean Scientific in the United Kingdom with salinities of 10, 30, 35 and 38 psu. All measurements were made at room temperature. Plans to make measurements at a range of temperatures and salinities will be discussed.

Deposition temperature dependent optical and electrical properties of ALD HfO{sub 2} gate dielectrics pretreated with tetrakisethylmethylamino hafnium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, J.; School of Sciences, Anhui University of Science and Technology, Huainan 232001; He, G., E-mail: hegang@ahu.edu.cn

2015-10-15

Highlights: • ALD-derived HfO{sub 2} gate dielectrics have been deposited on Si substrates. • The leakage current mechanism for different deposition temperature was discussed. • Different emission at different field region has been determined precisely. - Abstract: The effect of deposition temperature on the growth rate, band gap energy and electrical properties of HfO{sub 2} thin film deposited by atomic layer deposition (ALD) has been investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the growth rate and optical constant of ALD-derived HfO{sub 2} gate dielectrics are determined precisely. The deposition temperature dependent electrical properties of HfO{sub 2}more » films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. The leakage current mechanism for different deposition temperature has been discussed systematically. As a result, the optimized deposition temperature has been obtained to achieve HfO{sub 2} thin film with high quality.« less

Dielectric Characterization of PCL-Based Thermoplastic Materials for Microwave Diagnostic and Therapeutic Applications

PubMed Central

Aguilar, Suzette M.; Shea, Jacob D.; Al-Joumayly, Mudar A.; Van Veen, Barry D.; Behdad, Nader; Hagness, Susan C.

2011-01-01

We propose the use of a polycaprolactone (PCL)-based thermoplastic mesh as a tissue-immobilization interface for microwave imaging and microwave hyperthermia treatment. An investigation of the dielectric properties of two PCL-based thermoplastic materials in the frequency range of 0.5 – 3.5 GHz is presented. The frequency-dependent dielectric constant and effective conductivity of the PCL-based thermoplastics are characterized using measurements of microstrip transmission lines fabricated on substrates comprised of the thermoplastic meshes. We also examine the impact of the presence of a PCL-based thermoplastic mesh on microwave breast imaging. We use a numerical test bed comprised of a previously reported three-dimensional anatomically realistic breast phantom and a multi-frequency microwave inverse scattering algorithm. We demonstrate that the PCL-based thermoplastic material and the assumed biocompatible medium of vegetable oil are sufficiently well matched such that the PCL layer may be neglected by the imaging solution without sacrificing imaging quality. Our results suggest that PCL-based thermoplastics are promising materials as tissue immobilization structures for microwave diagnostic and therapeutic applications. PMID:21622068

Medium band gap polymer based solution-processed high-κ composite gate dielectrics for ambipolar OFET

NASA Astrophysics Data System (ADS)

Canımkurbey, Betül; Unay, Hande; Çakırlar, Çiğdem; Büyükköse, Serkan; Çırpan, Ali; Berber, Savas; Altürk Parlak, Elif

2018-03-01

The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5:PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b:4, 5-b‧] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5:PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5:PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5:PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5:PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5:PMMA ratio.

Characterization of ZrO2 and (ZrO2)x(Al2O3)1-X thin films on Si substrates: effect of the Al2O3 component

NASA Astrophysics Data System (ADS)

Vitanov, P.; Harizanova, A.; Ivanova, T.

2014-05-01

ZrO2 and (ZrO2)x(Al2O3)1-x films were deposited by the sol-gel technique on Si substrates. The effect of the Al2O3 additive on the film surface morphology was studied by atomic force microscopy (AFM). The mixed oxide films showed a smoother morphology and lower values of the root-mean-square (RMS) roughness compared to ZrO2. Further, FTIR spectra indicated that ZrO2 underwent crystallization. The electrical measurements of the MIS structure revealed that the presence of Al2O3 and the amorphization affects its dielectric properties. The MIS structure with (ZrO2)x(Al2O3)1-x showed a lower fixed charge (~ 6×1010 cm-2) and an interface state density in the middle of the band gap of 6×1011 eV-1 cm-2). The dielectric constant measured was 22, with the leakage current density decreasing to 2×10-8 A cm-2 at 1×106 V cm-1.

Analysis of the Dielectric constant of saline-alkali soils and the effect on radar backscattering coefficient: a case study of soda alkaline saline soils in Western Jilin Province using RADARSAT-2 data.

PubMed

Li, Yang-yang; Zhao, Kai; Ren, Jian-hua; Ding, Yan-ling; Wu, Li-li

2014-01-01

Soil salinity is a global problem, especially in developing countries, which affects the environment and productivity of agriculture areas. Salt has a significant effect on the complex dielectric constant of wet soil. However, there is no suitable model to describe the variation in the backscattering coefficient due to changes in soil salinity content. The purpose of this paper is to use backscattering models to understand behaviors of the backscattering coefficient in saline soils based on the analysis of its dielectric constant. The effects of moisture and salinity on the dielectric constant by combined Dobson mixing model and seawater dielectric constant model are analyzed, and the backscattering coefficient is then simulated using the AIEM. Simultaneously, laboratory measurements were performed on ground samples. The frequency effect of the laboratory results was not the same as the simulated results. The frequency dependence of the ionic conductivity of an electrolyte solution is influenced by the ion's components. Finally, the simulated backscattering coefficients measured from the dielectric constant with the AIEM were analyzed using the extracted backscattering coefficient from the RADARSAT-2 image. The results show that RADARSAT-2 is potentially able to measure soil salinity; however, the mixed pixel problem needs to be more thoroughly considered.

Carbon nanotube network thin-film transistors on flexible/stretchable substrates

DOEpatents

Takei, Kuniharu; Takahashi, Toshitake; Javey, Ali

2016-03-29

This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.

Optically controlled dielectric properties of single-walled carbon nanotubes for terahertz wave applications.

PubMed

Smirnov, Serguei; Anoshkin, Ilya V; Demchenko, Petr; Gomon, Daniel; Lioubtchenko, Dmitri V; Khodzitsky, Mikhail; Oberhammer, Joachim

2018-06-21

Materials with tunable dielectric properties are valuable for a wide range of electronic devices, but are often lossy at terahertz frequencies. Here we experimentally report the tuning of the dielectric properties of single-walled carbon nanotubes under light illumination. The effect is demonstrated by measurements of impedance variations at low frequency as well as complex dielectric constant variations in the wide frequency range of 0.1-1 THz by time domain spectroscopy. We show that the dielectric constant is significantly modified for varying light intensities. The effect is also practically applied to phase shifters based on dielectric rod waveguides, loaded with carbon nanotube layers. The carbon nanotubes are used as tunable impedance surface controlled by light illumination, in the frequency range of 75-500 GHz. These results suggest that the effect of dielectric constant tuning with light, accompanied by low transmission losses of the carbon nanotube layer in such an ultra-wide band, may open up new directions for the design and fabrication of novel Terahertz and optoelectronic devices.

Electrical conduction mechanism and phase transition studies using dielectric properties and Raman spectroscopy in ferroelectric Pb0.76Ca0.24TiO3 thin films

NASA Astrophysics Data System (ADS)

Pontes, F. M.; Pontes, D. S. L.; Leite, E. R.; Longo, E.; Chiquito, A. J.; Pizani, P. S.; Varela, J. A.

2003-12-01

We have studied the phase transition behavior of Pb0.76Ca0.24TiO3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb0.76Ca0.24TiO3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. On the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV.

Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics

NASA Astrophysics Data System (ADS)

Gyanan; Mondal, Sandip; Kumar, Arvind

2016-12-01

Post-deposition annealing (PDA) is an inherent part of a sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. Annealing removes the oxygen vacancies and improves the structural order of the dielectric films. The process also reduces the interface related defects and improves the interfacial properties. Here, we applied a sol-gel spin-coating technique to prepare high-k TiO2 films on the p-Si substrate. These films were fired at 400 °C for the duration of 20, 40, 60 and 80 min to know the effects of annealing time on the device characteristics. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of annealed TiO2 films were examined in Al/TiO2/p-Si device configuration at room temperature. The 60 min annealed film gives the optimum performance and contained 69.5% anatase and 39.5% rutile phase with refractive index 2.40 at 550 nm. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. This allows us to tune the various electrical properties of MOS systems. The accumulation capacitance (Cox), dielectric constant (κ) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25 nm, respectively with a low leakage current density (3.13 × 10-7 A/cm2) fired for 80 min at -1 V. The current conduction mechanisms at high bias voltage were dominated by trap-charge limited current (TCLC), while at small voltages, space charge limited current (SCLC) was more prominent.

Large dielectric constant in zirconia polypyrrole hybrid nanocomposites.

PubMed

Dey, Ashis; De, S K

2007-06-01

Zirconia nanoparticles have been synthesized by a novel two-reverse emulsion technique and combined with polypyrrole (PPY) to form ZrO2-PPY nanocomposites. Complex impedance and dielectric permittivity of ZrO2-PPY nanocomposite have been investigated as a function of frequency and temperature for different compositions. The composite samples are characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning and transmission electron microscopy. The composites reveal ordered semiconducting behaviour. Polypyrrole is the major component in electrical transport process of the samples. A very large dielectric constant of about 12,000 at room temperature has been observed. The colossal dielectric constant is mainly dominated by interfacial polarization due to Maxwell-Wagner relaxation effect. Two completely separate groups of dielectric relaxation have been observed. The low frequency dielectric relaxation arises from surface defect states of zirconia nanoparticles. The broad peak at high frequency is due to Maxwell-Wagner type polarization.

Studies on the structural, optical and dielectric properties of samarium coordinated with salicylic acid single crystal

NASA Astrophysics Data System (ADS)

Singh, Harjinder; Slathia, Goldy; Gupta, Rashmi; Bamzai, K. K.

2018-04-01

Samarium coordinated with salicylic acid was successfully grown as a single crystal by low temperature solution technique using mixed solvent of methanol and water in equal ratio. Structural characterization was carried out by single crystal X-ray diffraction analysis and it crystallizes in centrosymmetric space group P121/c1. FTIR and UV-Vis-NIR spectroscopy confirmed the compound formation and help to determine the mode of binding of the ligand to the rare earth-metal ion. Dielectric constant and dielectric loss have been measured over the frequency range 100 Hz - 30MHz. The decrease in dielectric constant with increases in frequency is due to the transition from interfacial polarization to dipolar polarization. The small value of dielectric constant at higher frequency ensures that the crystal is good candidate for NLO devices. Dielectric loss represents the resistive nature of the material.

Core-shell structured polystyrene/BaTiO3 hybrid nanodielectrics prepared by in situ RAFT polymerization: a route to high dielectric constant and low loss materials with weak frequency dependence.

PubMed

Yang, Ke; Huang, Xingyi; Xie, Liyuan; Wu, Chao; Jiang, Pingkai; Tanaka, Toshikatsu

2012-11-23

A novel route to prepare core-shell structured nanocomposites with excellent dielectric performance is reported. This approach involves the grafting of polystyrene (PS) from the surface of BaTiO(3) by an in situ RAFT polymerization. The core-shell structured PS/BaTiO(3) nanocomposites not only show significantly increased dielectric constant and very low dielectric loss, but also have a weak frequency dependence of dielectric properties over a wide range of frequencies. In addition, the dielectric constant of the nanocomposites can also be easily tuned by varying the thickness of the PS shell. Our method is very promising for preparing high-performance nanocomposites used in energy-storage devices. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ferroelectric, elastic, piezoelectric, and dielectric properties of Ba(Ti0.7Zr0.3)O3-x(Ba0.82Ca0.18)TiO3 Pb-free ceramics

NASA Astrophysics Data System (ADS)

Yuan, Ruihao; Xue, Deqing; Zhou, Yumei; Ding, Xiangdong; Sun, Jun; Xue, Dezhen

2017-07-01

We designed and synthesized a pseudo-binary Pb-free system, Ba(Ti0.7Zr0.3)O3-x(Ba0.82Ca0.18)TiO3, by combining a rhombohedral end (with only cubic to rhombohedral ferroelectric phase transition) and a tetragonal end (with only cubic to tetragonal ferroelectric phase transition). The established composition-temperature phase diagram is characterized by a tricritical point type morphotropic phase boundary (MPB), and the MPB composition has better ferroelectric, piezoelectric, and dielectric properties than the compositions deviating from MPB. Moreover, a full set of material constants (including elastic stiffness constants, elastic compliance constants, piezoelectric constants, dielectric constants, and electromechanical coupling factors) of the MPB composition are determined using a resonance method. The good piezoelectric performance of the MPB composition can be ascribed to the high dielectric constants, elastic softening, and large electromechanical coupling factor.

Laser-driven interactions and resultant instabilities in materials with high dielectric constant

NASA Astrophysics Data System (ADS)

Rajpoot, Moolchandra; Dixit, Sanjay

2015-07-01

An analytical investigation of nonlinear interactions resulting in parametric amplification of acoustic wave is made by obtaining the dispersion relation using hydrodynamic model of inhomogeneous plasma by applying large static field at an arbitrary angle with the pump wave. The investigation shows that many early studies have neglected dependence of dielectric constant on deformation of materials but deformation of materials does infect depends on the dielectric constant of medium. Thus we have assumed to high dielectric material like BaTiO3 which resulted in substantially high growth rate of threshold electric field which opens a new dimension to study nonlinear interactions and instabilities.

Dielectric constants of soils at microwave frequencies

NASA Technical Reports Server (NTRS)

Geiger, F. E.; Williams, D.

1972-01-01

A knowledge of the complex dielectric constant of soils is essential in the interpretation of microwave airborne radiometer data of the earth's surface. Measurements were made at 37 GHz on various soils from the Phoenix, Ariz., area. Extensive data have been obtained for dry soil and soil with water content in the range from 0.6 to 35 percent by dry weight. Measurements were made in a two arm microwave bridge and results were corrected for reflections at the sample interfaces by solution of the parallel dielectric plate problem. The maximum dielectric constants are about a factor of 3 lower than those reported for similar soils at X-band frequencies.

Coarse grained modeling of directed assembly to form functional nanoporous films

NASA Astrophysics Data System (ADS)

Al Khatib, Amir

A coarse-grained (CG) simulation of polyethylene glycol (PEG) and Polymethylsilsesquixane nanoparticle (PMSSQ) referred to as (NP) at different sizes and concentrations were done using the Martini coarse-grained (CG) force field. The interactions between CG PEG and CG NP were parameterized from the chemical compound of each molecule and based on Martini force field. NP particles migrates to the surface of the substrate in an agreement with the experimental output at high temperature of 800K. This demonstration of nanoparticles-polymer film to direct it to self-assemble a systematically spatial pattern using the substrate surface energy as the key gating parameter. Validation of the model comparing molecular dynamics simulations with experimental data collected from previous study. NP interaction with the substrate at low interactions energy using Lennard-Johns potential were able to direct the NP to self-assemble in a hexagonal shape up to 4 layers above the substrate. This thesis established that substrate surface energy is a key gating parameter to direct the collective behavior of functional nanoparticles to form thin nanoporous films with spatially predetermined optical/dielectric constants.

An anion substitution route to low loss colossal dielectric CaCu{sub 3}Ti{sub 4}O{sub 12}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, Andrew E.; Calvarese, T.G.; Sleight, A.W.

2009-02-15

An anion substitution route was utilized for lowering the dielectric loss in CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) by partial replacement of oxygen by fluorine. This substitution reduced the dielectric loss, and retained a high dielectric constant that was essentially temperature independent from 25 to 200 deg. C. In particular, CaCu{sub 3}Ti{sub 4}O{sub 11.7}F{sub 0.3} exhibited a giant dielectric constant over 6000 and low dielectric loss below 0.075 at 100 kHz within a temperature range of 25-200 deg. C. Fluorine analysis confirmed the presence of fluorine in all samples measured. - Grapical Abstract: An anion substitution route was utilized for loweringmore » the dielectric loss in CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) by partial replacement of oxygen by fluorine. This substitution, confirmed by fluorine analysis, reduced tan {delta}, and retained a high dielectric constant that was essentially temperature independent from 25 to 200 deg. C at 100 kHz.« less

Microwave dielectric behavior of vegetation material

NASA Technical Reports Server (NTRS)

Elrayes, Mohamed A.; Ulaby, Fawwaz T.

1987-01-01

The microwave dielectric behavior of vegetation was examined through the development of theoretical models involving dielectric dispersion by both bound and free water and supported by extensive dielectric measurements conducted over a wide range of conditions. The experimental data were acquired using an open-ended coaxial probe that was developed for sensing the dielectric constant of thin layers of materials, such as leaves, from measurements of the complex reflection coefficient using a network analyzer. The probe system was successfully used to record the spectral variation of the dielectric constant over a wide frequency range extending from 0.5 to 20.4 GHz at numerous temperatures between -40 to +40 C. The vegetation samples were measured over a wide range of moisture conditions. To model the dielectric spectrum of the bound water component of the water included in vegetation, dielectric measurements were made for several sucrose-water solutions as analogs for the situation in vegetation. The results were used in conjunction with the experimental data for leaves to determine some of the constant coefficients in the theoretical models. Two models, both of which provide good fit to the data, are proposed.

Effect of doping ions on the structural defect and the electrical behavior of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Renzhong; Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou 450002; Zhao, Gaoyang, E-mail: zhaogy@xaut.edu.cn

Graphical abstract: The dielectric constant decreases with Ta doping, increases with Y doping and keeps almost constant with Zr doping compared with that of pure CCTO. - Highlights: • Y and Ta doping cause different defect types and concentration. • Defect influences the grain boundary mobility and results in different grain size. • Y doping increases the dielectric constant and decreases the nonlinear property. • Ta doping decreases the dielectric constant and enhances the nonlinear property. • Zr doped sample has nearly the defect type and dielectric properties as CaCu{sub 3}Ti{sub 4}O{sub 12}. - Abstract: The microstructure, dielectric and electricalmore » properties of CaCu{sub 3}Ti{sub 4−x}R{sub x}O{sub 12} (R = Y, Zr, Ta; x = 0 and 0.005) ceramics were investigated by XRD, Raman spectra, SEM and dielectric spectrum measurements. Positron annihilation measurements have been performed to investigate the influence of doping on the defects. The results show that all samples form a single crystalline phase. Y and Ta doping cause different defect types and increase the defect size and concentration, which influence the mobility of grain boundary and result in the different grain size. Y doping increases the dielectric constant and decreases the nonlinear property while Ta doping lead to an inverse result. Zr-doped sample has nearly the defect type, grain morphology and dielectric properties as pure CaCu{sub 3}Ti{sub 4}O{sub 12}. The effects of microstructure including the grain morphology and the vacancy defects on the mechanism of the dielectric and electric properties by doping are discussed.« less

Numerical calculations of temperature dependence of dielectric constant for an ordered assembly of BaTiO3 nanocubes with small tilt angles

NASA Astrophysics Data System (ADS)

Yasui, Kyuichi; Mimura, Ken-ichi; Izu, Noriya; Kato, Kazumi

2018-03-01

The dielectric constant of an ordered assembly of BaTiO3 nanocubes is numerically calculated as a function of temperature assuming a distribution of tilt angles of attached nanocubes. As the phase transition temperature from the tetragonal crystal structure to the cubic crystal structure of a BaTiO3 nanocube decreases as the tilt angle increases, the temperature at the peak of the dielectric constant of an ordered assembly is considerably lower than the Curie temperature of a free-standing BaTiO3 crystal. The peak of the dielectric constant as a function of temperature for an ordered assembly becomes considerably broader than that for a single crystal owing to the contribution of nanocubes with various tilt angles.

On the room temperature multiferroic BiFeO3: magnetic, dielectric and thermal properties

NASA Astrophysics Data System (ADS)

Lu, J.; Günther, A.; Schrettle, F.; Mayr, F.; Krohns, S.; Lunkenheimer, P.; Pimenov, A.; Travkin, V. D.; Mukhin, A. A.; Loidl, A.

2010-06-01

Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at mm-wavelengths, as well as ferroelectric polarization are reported for single crystalline BiFeO3. A well developed anomaly in the magnetic susceptibility signals the onset of antiferromagnetic order close to 635 K. Beside this anomaly no further indications of phase or glass transitions are indicated in the magnetic dc and ac susceptibilities down to the lowest temperatures. The heat capacity has been measured from 2 K up to room temperature and significant contributions from magnon excitations have been detected. From the low-temperature heat capacity an anisotropy gap of the magnon modes of the order of 6 meV has been determined. The dielectric constants measured in standard two-point configuration are dominated by Maxwell-Wagner like effects for temperatures T > 300 K and frequencies below 1 MHz. At lower temperatures the temperature dependence of the dielectric constant and loss reveals no anomalies outside the experimental errors, indicating neither phase transitions nor strong spin phonon coupling. The temperature dependence of the dielectric constant was measured contact free at microwave frequencies. At room temperature the dielectric constant has an intrinsic value of 53. The loss is substantial and strongly frequency dependent indicating the predominance of hopping conductivity. Finally, in small thin samples we were able to measure the ferroelectric polarization between 10 and 200 K. The saturation polarization is of the order of 40 μC/cm2, comparable to reports in literature.

Electrical Characteristics and Preparation of (Ba0.5Sr0.5)TiO3 Films by Spray Pyrolysis and Rapid Thermal Annealing

NASA Astrophysics Data System (ADS)

Koo, Horng-Show; Chen, Mi; Ku, Hong-Kou; Kawai, Tomoji

2007-04-01

Functional films of (Ba0.5Sr0.5)TiO3 on Pt (1000 Å)/Ti (100 Å)/SiO2 (2000 Å)/Si substrates are prepared by spray pyrolysis and subsequently rapid thermal annealing. Barium nitrate, strontium nitrate and titanium isopropoxide are used as starting materials with ethylene glycol as solvent. For (Ba0.5Sr0.5)TiO3 functional thin film, thermal characteristics of the precursor powder scratched from as-sprayed films show a remarkable peak around 300-400 °C and 57.7% weight loss up to 1000 °C. The as-sprayed precursor film with coffee-like color and amorphous-like phase is transformed into the resultant film with white, crystalline perovskite phase and characteristic peaks (110) and (100). The resultant films show correspondent increases of dielectric constant, leakage current and dissipation factor with increasing annealing temperatures. The dielectric constant is 264 and tangent loss is 0.21 in the resultant films annealed at 750 °C for 5 min while leakage current density is 1.5× 10-6 A/cm2 in the film annealed at 550 °C for 5 min.

Dielectric properties of soils as a function of moisture content

NASA Technical Reports Server (NTRS)

Cihlar, J.; Ulaby, F. T.

1974-01-01

Soil dielectric constant measurements are reviewed and the dependence of the dielectric constant on various soil parameters is determined. Moisture content is given special attention because of its practical significance in remote sensing and because it represents the single most influential parameter as far as soil dielectric properties are concerned. Relative complex dielectric constant curves are derived as a function of volumetric soil water content at three frequencies (1.3 GHz, 4.0 GHz, and 10.0 GHz) for each of three soil textures (sand, loam, and clay). These curves, presented in both tabular and graphical form, were chosen as representative of the reported experimental data. Calculations based on these curves showed that the power reflection coefficient and emissivity, unlike skin depth, vary only slightly as a function of frequency and soil texture.

Possible origin of nonlinear conductivity and large dielectric constant in the commensurate charge-density-wave phase of 1 T -TaS2

NASA Astrophysics Data System (ADS)

Ma, Yongchang; Hou, Yanhui; Lu, Cuimin; Li, Lijun; Petrovic, Cedomir

2018-05-01

The electric field dependence of the dielectric properties and the nonlinear conductance of 1 T -TaS2 below 50 K has been investigated. A large dielectric constant of about 104 is obtained up to 107 Hz, which cannot be attributed to hopping of the localized carriers alone, the collective excitations of the commensurate charge-density-wave must be another contributor. The dielectric spectra disperse slightly in our measured temperature and frequency range. At a moderate dc bias field, the real part of the dielectric constant ɛ1(ω ) decreases. We propose that the separation of bound soliton-antisoliton pairs may be a contributor to the reduction of ɛ1(ω ) and the accompanying nonlinear conductivity with increasing dc bias.

A hollow coaxial cable Fabry-Pérot resonator for liquid dielectric constant measurement

NASA Astrophysics Data System (ADS)

Zhu, Chen; Zhuang, Yiyang; Chen, Yizheng; Huang, Jie

2018-04-01

We report, for the first time, a low-cost and robust homemade hollow coaxial cable Fabry-Pérot resonator (HCC-FPR) for measuring liquid dielectric constant. In the HCC design, the traditional dielectric insulating layer is replaced by air. A metal disk is welded onto the end of the HCC serving as a highly reflective reflector, and an open cavity is engineered on the HCC. After the open cavity is filled with the liquid analyte (e.g., water), the air-liquid interface acts as a highly reflective reflector due to large impedance mismatch. As a result, an HCC-FPR is formed by the two highly reflective reflectors, i.e., the air-liquid interface and the metal disk. We measured the room temperature dielectric constant for ethanol/water mixtures with different concentrations using this homemade HCC-FPR. Monitoring the evaporation of ethanol in ethanol/water mixtures was also conducted to demonstrate the ability of the sensor for continuously monitoring the change in dielectric constant. The results revealed that the HCC-FPR could be a promising evaporation rate detection platform with high performance. Due to its great advantages, such as high robustness, simple configuration, and ease of fabrication, the novel HCC-FPR based liquid dielectric constant sensor is believed to be of high interest in various fields.

A hollow coaxial cable Fabry-Pérot resonator for liquid dielectric constant measurement.

PubMed

Zhu, Chen; Zhuang, Yiyang; Chen, Yizheng; Huang, Jie

2018-04-01

We report, for the first time, a low-cost and robust homemade hollow coaxial cable Fabry-Pérot resonator (HCC-FPR) for measuring liquid dielectric constant. In the HCC design, the traditional dielectric insulating layer is replaced by air. A metal disk is welded onto the end of the HCC serving as a highly reflective reflector, and an open cavity is engineered on the HCC. After the open cavity is filled with the liquid analyte (e.g., water), the air-liquid interface acts as a highly reflective reflector due to large impedance mismatch. As a result, an HCC-FPR is formed by the two highly reflective reflectors, i.e., the air-liquid interface and the metal disk. We measured the room temperature dielectric constant for ethanol/water mixtures with different concentrations using this homemade HCC-FPR. Monitoring the evaporation of ethanol in ethanol/water mixtures was also conducted to demonstrate the ability of the sensor for continuously monitoring the change in dielectric constant. The results revealed that the HCC-FPR could be a promising evaporation rate detection platform with high performance. Due to its great advantages, such as high robustness, simple configuration, and ease of fabrication, the novel HCC-FPR based liquid dielectric constant sensor is believed to be of high interest in various fields.

Wave attenuation and mode dispersion in a waveguide coated with lossy dielectric material

NASA Technical Reports Server (NTRS)

Lee, C. S.; Chuang, S. L.; Lee, S. W.; Lo, Y. T.

1984-01-01

The modal attenuation constants in a cylindrical waveguide coated with a lossy dielectric material are studied as functions of frequency, dielectric constant, and thickness of the dielectric layer. A dielectric material best suited for a large attenuation is suggested. Using Kirchhoff's approximation, the field attenuation in a coated waveguide which is illuminated by a normally incident plane wave is also studied. For a circular guide which has a diameter of two wavelengths and is coated with a thin lossy dielectric layer (omega sub r = 9.1 - j2.3, thickness = 3% of the radius), a 3 dB attenuation is achieved within 16 diameters.

Dielectric relaxation of near-percolated carbon nanofiber polypropylene composites

NASA Astrophysics Data System (ADS)

Paleo, A. J.; Zille, A.; Van Hattum, F. W.; Ares-Pernas, A.; Agostinho Moreira, J.

2017-07-01

In this work, the morphological, structural and dielectric analysis of near-percolated polypropylene (PP) composites containing carbon nanofibers (CNF) processing by melt-mixing are investigated. Whereas the morphological analysis shows that CNF exhibit some tendency to agglomerate within the PP matrix, the structural analysis showed first a general decrease in the intensity of the IR bands as a consequence of the interaction between carbon nanofibers and PP matrix and second an increase of the crystallinity degree of the PP/CNF composites when compared to the pure PP. The dielectric analysis demonstrates enhanced dielectric constants (from 2.97 for neat polymer to 9.7 for 1.9 vol% loaded composites at 200 Hz) and low dielectric losses. Furthermore, the dielectric relaxation for composites with concentrations in the vicinity of percolation is evidenced and well described by the generalized polydispersive Cole-Cole model from which the values of static dielectric constant (εs) , high frequency dielectric constant (ε∞) , distribution of relaxation time (α) and mean relaxation time (τo), are determined, suggesting that this latter analysis constitutes a strong tool for understanding the relationships between microstructure and dielectric properties in this type of polymer composites.

Single crystal substrates for surface acoustic wave devices

NASA Astrophysics Data System (ADS)

Barsch, G. R.; Spear, K. E.

1981-01-01

In order to search for new temperature compensated materials for surface acoustic wave (SAW) devices with low ultrasonic attenuation and high electromechanical coupling, the following experimental and theoretical investigations were carried out: (1) Crystal growth research centered around: designing, constructing, and writing the software for a computer controlled constant-diameter attachment for our Czochralski crystal pullers; a major experimental effort on the growth of lead potassium niobate (PKN); Pb2KNb5O15, and lead bismuth niobate (PBN) PbBi2Nb2O9, and a minor experimental effort on the growth of lithium metasilicate, Li2SiO3; and bismuth molybdate, Bi2MoO6. (2) The dielectric constants and the associated loss tangents of alpha-berlinite were measured at eleven frequencies from 100 to 10,000 Hz between -150 and 200 C. The temperature dependence of the dielectric constants and the relaxation behavior are similar to the results obtained earlier, but the absolute values are 20 to 30 percent smaller than reported previously. (3) The temperature dependence of the two shear modes propagating in (001) has been measured from 10 to 315K for Bi4Ti3O12. A monotonical decrease of the associated shear moduli has been found. (4) Considerable effort was devoted to specimen preparation of lead bismuth niobate which was hampered by the easy cleavage of this material perpendicular to 001 .

Effects of oxygen deficiency on the transport and dielectric properties of NdSrNbO

NASA Astrophysics Data System (ADS)

Hzez, W.; Benali, A.; Rahmouni, H.; Dhahri, E.; Khirouni, K.; Costa, B. F. O.

2018-06-01

In the present study, Nd0.7Sr0.3NbO3-y (y = 0.1, 0.15, 0.2) compounds were prepared via a solid-solid reaction route. The prepared samples were characterized by electrochemical impedance spectroscopy in order to establish the effects of temperature, frequency, and oxygen vacancies on both the transport and dielectric properties of NdSrNbO. We found that both the electrical and dielectric properties were highly sensitive to the concentration of oxygen vacancies. The conduction mechanism data were explained well according to the Mott model and adiabatic small polaronic hopping model. Electrochemical impedance spectroscopy analysis showed that one relaxation process was present in the Nd0.7Sr0.3NbO2.9 system whereas two relaxation processes were observed in the Nd0.7Sr0.3NbO2.85 and Nd0.7Sr0.3NbO2.8 systems, where the latter behavior indicated the presence of many active regions (due to the contributions of different microstructures). The temperature and frequency dependences of the dielectric constant confirmed the contributions of different polarization mechanisms. In particular, the high dielectric constant values at low frequencies and high temperatures were mainly related to the presence of different Schottky barriers, whereas the low dielectric constant values at high frequencies were essentially related to the intrinsic effect. The constant dielectric values obtained for the samples are greater than those in the NdSrFeO system, which makes them interesting materials for use in applications that require high dielectric constants.

Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study

NASA Astrophysics Data System (ADS)

Zizka, J.; King, S.; Every, A.; Sooryakumar, R.

2018-04-01

To reduce the RC (resistance-capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low-k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low-k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson's ratio, and Young's modulus of these porous low-k SiOC:H films (˜ 25-250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions.

Design and VNA-measurement of coplanar waveguide (CPW) on benzocyclobutene (BCB) at THz frequencies

NASA Astrophysics Data System (ADS)

Cao, Lei; Grimault-Jacquin, Anne-Sophie; Zerounian, Nicolas; Aniel, Frédéric

2014-03-01

The low permittivity and the low loss tangent of the benzocyclobutene polymer (BCB) offers to coplanar waveguides (CPW) a low dispersive propagation properties at THz frequency. These transmission lines have been designed, modeled with a three dimensional (3D) solver of Maxwell equations based on finite element method (FEM) from 20 to 1000 GHz at various characteristic impedances (Zc). Their dispersion and losses (radiation, conduction and dielectric) have been investigated separately versus the waveguide size, the nature of the substrate (dielectric or semiconductor) to optimize the THz signal propagation. Monomode CPW on BCB numerically designed for various Zc were realized and measured with vector network analyzer (VNA). S-parameters of CPW are de-embedded by optimization of the accesses' model. A good agreement is found between experimental and numerical results with low attenuation constants of 2.7 dB/mm and 3.5 dB/mm at 400 GHz and 500 GHz, respectively.

Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low- k Films: A Surface Brillouin Scattering Study

NASA Astrophysics Data System (ADS)

Zizka, J.; King, S.; Every, A.; Sooryakumar, R.

2018-07-01

To reduce the RC (resistance-capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low- k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low- k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson's ratio, and Young's modulus of these porous low- k SiOC:H films (˜ 25-250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions.

Textile materials for the design of wearable antennas: a survey.

PubMed

Salvado, Rita; Loss, Caroline; Gonçalves, Ricardo; Pinho, Pedro

2012-11-15

In the broad context of Wireless Body Sensor Networks for healthcare and pervasive applications, the design of wearable antennas offers the possibility of ubiquitous monitoring, communication and energy harvesting and storage. Specific requirements for wearable antennas are a planar structure and flexible construction materials. Several properties of the materials influence the behaviour of the antenna. For instance, the bandwidth and the efficiency of a planar microstrip antenna are mainly determined by the permittivity and the thickness of the substrate. The use of textiles in wearable antennas requires the characterization of their properties. Specific electrical conductive textiles are available on the market and have been successfully used. Ordinary textile fabrics have been used as substrates. However, little information can be found on the electromagnetic properties of regular textiles. Therefore this paper is mainly focused on the analysis of the dielectric properties of normal fabrics. In general, textiles present a very low dielectric constant that reduces the surface wave losses and increases the impedance bandwidth of the antenna. However, textile materials are constantly exchanging water molecules with the surroundings, which affects their electromagnetic properties. In addition, textile fabrics are porous, anisotropic and compressible materials whose thickness and density might change with low pressures. Therefore it is important to know how these characteristics influence the behaviour of the antenna in order to minimize unwanted effects. This paper presents a survey of the key points for the design and development of textile antennas, from the choice of the textile materials to the framing of the antenna. An analysis of the textile materials that have been used is also presented.

Textile Materials for the Design of Wearable Antennas: A Survey

PubMed Central

Salvado, Rita; Loss, Caroline; Gonçalves, Ricardo; Pinho, Pedro

2012-01-01

In the broad context of Wireless Body Sensor Networks for healthcare and pervasive applications, the design of wearable antennas offers the possibility of ubiquitous monitoring, communication and energy harvesting and storage. Specific requirements for wearable antennas are a planar structure and flexible construction materials. Several properties of the materials influence the behaviour of the antenna. For instance, the bandwidth and the efficiency of a planar microstrip antenna are mainly determined by the permittivity and the thickness of the substrate. The use of textiles in wearable antennas requires the characterization of their properties. Specific electrical conductive textiles are available on the market and have been successfully used. Ordinary textile fabrics have been used as substrates. However, little information can be found on the electromagnetic properties of regular textiles. Therefore this paper is mainly focused on the analysis of the dielectric properties of normal fabrics. In general, textiles present a very low dielectric constant that reduces the surface wave losses and increases the impedance bandwidth of the antenna. However, textile materials are constantly exchanging water molecules with the surroundings, which affects their electromagnetic properties. In addition, textile fabrics are porous, anisotropic and compressible materials whose thickness and density might change with low pressures. Therefore it is important to know how these characteristics influence the behaviour of the antenna in order to minimize unwanted effects. This paper presents a survey of the key points for the design and development of textile antennas, from the choice of the textile materials to the framing of the antenna. An analysis of the textile materials that have been used is also presented. PMID:23202235

X-ray diffraction and surface acoustic wave analysis of BST/Pt/TiO{sub 2}/SiO{sub 2}/Si thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mseddi, Souhir; Hedi Ben Ghozlen, Mohamed; Njeh, Anouar

2011-11-15

High dielectric constant and electrostriction property of (Ba, Sr)Ti0{sub 3} (BST) thin films result in an increasing interest for dielectric devices and microwave acoustic resonator. Barium strontium titanate (Ba{sub 0.645}Sr{sub 0.355}TiO{sub 3}) films of about 300 nm thickness are grown on Pt(111)/TiO{sub 2}/SiO{sub 2}/Si(001) substrates by rf magnetron sputtering deposition techniques. X-ray diffraction is applied for the microstructural characterization. The BST films exhibit a cubic perovskite structure with a dense and smooth surface. A laser acoustic waves (LA-waves) technique is used to generate surface acoustic waves (SAW) propagating in the BST films. Young's modulus E and the Poisson ratio {nu}more » of TiO{sub 2,} Pt and BST films in different propagation directions are derived from the measured dispersion curves. Estimation of BST elastics constants are served in SAW studies. Impact of stratification process on SAW, propagating along [100] and [110] directions of silicon substrate, has been interpreted on the basis of ordinary differential equation (ODE) and stiffness matrix method (SMM). A good agreement is observed between experimental and calculated dispersion curves. The performed calculations are strongly related to the implemented crystallographic data of each layer. Dispersion curves are found to be sensitive to the SAW propagation direction and the stratification process for the explored frequency ranges 50-250 MHz, even though it corresponds to a wave length clearly higher than the whole films thickness.« less

Resonant frequency of microstrip antennas calculated from TE-excitation of an infinite strip embedded in a grounded dielectric slab

NASA Technical Reports Server (NTRS)

Bailey, M. C.

1979-01-01

The calculation of currents induced by a plane wave normally incident upon an infinite strip embedded in a grounded dielectric slab is used to infer the resonant width (or frequency) of rectangular microstrip antennas. By placing the strip inside the dielectric, the effect of a dielectric cover of the same material as the substrate can be included in the calculation of resonant frequency. A comparison with measured results indicated agreement of 1 percent or better for rectangular microstrip antennas constructed on Teflon-fiberglass substrate.

PLZT capacitor on glass substrate

DOEpatents

Fairchild, Manuel Ray; Taylor, Ralph S.; Berlin, Carl W.; Wong, Celine Wk; Ma, Beihai; Balachandran, Uthamalingam

2016-03-29

A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

PLZT capacitor on glass substrate

DOEpatents

Fairchild, M. Ray; Taylor, Ralph S.; Berlin, Carl W.; Wong, Celine W. K.; Ma, Beihai; Balachandran, Uthamalingam

2016-01-05

A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

Voltage sensor and dielectric material

DOEpatents

Yakymyshyn, Christopher Paul; Yakymyshyn, Pamela Jane; Brubaker, Michael Allen

2006-10-17

A voltage sensor is described that consists of an arrangement of impedance elements. The sensor is optimized to provide an output ratio that is substantially immune to changes in voltage, temperature variations or aging. Also disclosed is a material with a large and stable dielectric constant. The dielectric constant can be tailored to vary with position or direction in the material.

A flexible insulator of a hollow SiO2 sphere and polyimide hybrid for flexible OLEDs.

PubMed

Kim, Min Kyu; Kim, Dong Won; Shin, Dong Wook; Seo, Sang Joon; Chung, Ho Kyoon; Yoo, Ji Beom

2015-01-28

The fabrication of interlayer dielectrics (ILDs) in flexible organic light-emitting diodes (OLEDs) not only requires flexible materials with a low dielectric constant, but also ones that possess the electrical, thermal, chemical, and mechanical properties required for optimal device performance. Porous polymer-silica hybrid materials were prepared to satisfy these requirements. Hollow SiO2 spheres were synthesized using atomic layer deposition (ALD) and a thermal calcination process. The hybrid film, which consists of hollow SiO2 spheres and polyimide, shows a low dielectric constant of 1.98 and excellent thermal stability up to 500 °C. After the bending test for 50 000 cycles, the porous hybrid film exhibits no degradation in its dielectric constant or leakage current. These results indicate that the hybrid film made up of hollow SiO2 spheres and polyimide (PI) is useful as a flexible insulator with a low dielectric constant and high thermal stability for flexible OLEDs.

Flexible, Low-Power Thin-Film Transistors Made of Vapor-Phase Synthesized High-k, Ultrathin Polymer Gate Dielectrics.

PubMed

Choi, Junhwan; Joo, Munkyu; Seong, Hyejeong; Pak, Kwanyong; Park, Hongkeun; Park, Chan Woo; Im, Sung Gap

2017-06-21

A series of high-k, ultrathin copolymer gate dielectrics were synthesized from 2-cyanoethyl acrylate (CEA) and di(ethylene glycol) divinyl ether (DEGDVE) monomers by a free radical polymerization via a one-step, vapor-phase, initiated chemical vapor deposition (iCVD) method. The chemical composition of the copolymers was systematically optimized by tuning the input ratio of the vaporized CEA and DEGDVE monomers to achieve a high dielectric constant (k) as well as excellent dielectric strength. Interestingly, DEGDVE was nonhomopolymerizable but it was able to form a copolymer with other kinds of monomers. Utilizing this interesting property of the DEGDVE cross-linker, the dielectric constant of the copolymer film could be maximized with minimum incorporation of the cross-linker moiety. To our knowledge, this is the first report on the synthesis of a cyanide-containing polymer in the vapor phase, where a high-purity polymer film with a maximized dielectric constant was achieved. The dielectric film with the optimized composition showed a dielectric constant greater than 6 and extremely low leakage current densities (<3 × 10 -8 A/cm 2 in the range of ±2 MV/cm), with a thickness of only 20 nm, which is an outstanding thickness for down-scalable cyanide polymer dielectrics. With this high-k dielectric layer, organic thin-film transistors (OTFTs) and oxide TFTs were fabricated, which showed hysteresis-free transfer characteristics with an operating voltage of less than 3 V. Furthermore, the flexible OTFTs retained their low gate leakage current and ideal TFT characteristics even under 2% applied tensile strain, which makes them some of the most flexible OTFTs reported to date. We believe that these ultrathin, high-k organic dielectric films with excellent mechanical flexibility will play a crucial role in future soft electronics.

Nanocomposites for high-speed optical modulators and plasmonic thermal mid-infrared emitters

NASA Astrophysics Data System (ADS)

Demir, Veysi

Demand for high-speed optical modulators and narrow-bandwidth infrared thermal emitters for numerous applications continues to rise and new optical devices are needed to deal with massive data flows, processing powers, and fabrication costs. Conventional techniques are usually hindered by material limitations or electronic interconnects and advances in organic nanocomposite materials and their integration into photonic integrated circuits (PICs) have been acknowledged as a promising alternative to single crystal techniques. The work presented in this thesis uses plasmonic and magneto-optic effects towards the development of novel optical devices for harnessing light and generating high bandwidth signals (>40GHz) at room and cryogenic temperatures (4.2°K). Several publications have resulted from these efforts and are listed at the end of the abstract. In our first published research we developed a narrow-bandwidth mid-infrared thermal emitter using an Ag/dielectric/Ag thin film structure arranged in hexagonal planar lattice structures. PECVD produced nanoamorphous carbon (NAC) is used as a dielectric layer. Spectrally tunable (>2 mum) and narrow bandwidth (<0.5 mum) emission peaks in the range of 4-7 mum were demonstrated by decreasing the resistivity of NAC from 1012 and 109 O.cm with an MoSi2 dopant and increasing the emitter lattice constant from 4 to 7 mum. This technique offers excellent flexibility for developing cost-effective mid-IR sources as compared to costly fiber and quantum cascade lasers (QCLs). Next, the effect of temperature on the Verdet constant for cobalt-ferrite polymer nanocomposites was measured for a series of temperatures ranging from 40 to 200°K with a Faraday rotation polarimeter. No visual change was observed in the films during thermal cycling, and ˜4x improvement was achieved at 40°K. The results are promising and further analysis is merited at 4.2°K to assess the performance of this material for cryogenic magneto-optic modulators for supercomputers. Finally, the dielectric constant and loss tangent of MAPTMS sol-gel films were measured over a wide range of microwave frequencies. The test structures were prepared by spin-coating sol-gel films onto metallized glass substrates. The dielectric properties of the sol-gel were probed with several different sets of coplanar waveguides (CPWs) electroplated onto sol-gel films. The dielectric constant and loss-tangent of these films were determined to be ˜3.1 and 3 x 10-3 at 35GHz. These results are very promising indicating that sol-gels are viable cladding materials for high-speed electro-optic polymer modulators (>40GHz).

Dielectric properties of carbon nanotubes/epoxy composites.

PubMed

Peng, Jin-Ping; Zhang, Hui; Tang, Long-Cheng; Jia, Yu; Zhang, Zhong

2013-02-01

Material with high dielectric properties possesses the effect of energy storage and electric field homogenization, which plays an important role in the electrical and electronics domain, especially in the capacitor, electrical machinery and cable realm. In this paper, epoxy-based nanocomposites with high dielectric constant were fabricated by adding pristine and ozone functionalized multi-wall carbon nanotubes (MWCNTs). In the process-related aspect, the favorable technological parameter was obtained via reasonable arrangement and consideration of the dispersing methods including high-speed stirring and three-roller mill. As a result, a uniform dispersion status of MWCNTs in matrix has been guaranteed, which was observed by scanning and transmission electron microscopy. Meanwhile, the influence of different MWCNTs contents and diverse frequencies on the dielectric properties was compared. It was found that the dielectric constant of nano-composites decreased gradually with the increasing of frequency (10(3)-10(6) Hz). Moreover, as the content of MWCNTs increasing, the dielectric constant reached to a maximum of about 1,328 at 10(3) Hz when the pristine MWCNTs content was 0.5 wt.%. Accordingly, the DC conductivity results could interpret the peak value phenomenon by percolation threshold of MWCNTs. In addition, at the fixed content, the dielectric constant of epoxy-based nano-composites with ozone functionalized MWCNTs was lower than that of pristine ones.

Hyperbolic metamaterial nanostructures to tune charge-transfer dynamics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Lee, Kwang Jin; Xiao, Yiming; Woo, Jae Heun; Kim, Eun Sun; Kreher, David; Attias, André-Jean; Mathevet, Fabrice; Ribierre, Jean-Charles; Wu, Jeong Weon; André, Pascal

2016-09-01

Charge transfer (CT) is an essential phenomenon relevant to numerous fields including biology, physics and chemistry.1-5 Here, we demonstrate that multi-layered hyperbolic metamaterial (HMM) substrates alter organic semiconductor CT dynamics.6 With triphenylene:perylene diimide dyad supramolecular self-assemblies prepared on HMM substrates, we show that both charge separation (CS) and charge recombination (CR) characteristic times are increased by factors of 2.5 and 1.6, respectively, resulting in longer-lived CT states. We successfully rationalize the experimental data by extending Marcus theory framework with dipole image interactions tuning the driving force. The number of metal-dielectric pairs alters the HMM interfacial effective dielectric constant and becomes a solid analogue to solvent polarizability. Based on the experimental results and extended Marcus theory framework, we find that CS and CR processes are located in normal and inverted regions on Marcus parabola diagram, respectively. The model and further PH3T:PCBM data show that the phenomenon is general and that molecular and substrate engineering offer a wide range of kinetic tailoring opportunities. This work opens the path toward novel artificial substrates designed to control CT dynamics with potential applications in fields including optoelectronics, organic solar cells and chemistry. 1. Marcus, Rev. Mod. Phys., 1993, 65, 599. 2. Marcus, Phys. Chem. Chem. Phys., 2012, 14, 13729. 3. Lambert, et al., Nat. Phys., 2012, 9, 10. 4. C. Clavero, Nat. Photon., 2014, 8, 95. 5. A. Canaguier-Durand, et al., Angew. Chem. Int. Ed., 2013, 52, 10533. 6. K. J. Lee, et al., Submitted, 2015, arxiv.org/abs/1510.08574.

Colossal dielectric and electromechanical responses in self-assembled polymeric nanocomposites

NASA Astrophysics Data System (ADS)

Huang, Cheng; Zhang, Q. M.; Li, Jiang Yu; Rabeony, Manese

2005-10-01

An electroactive polymer nanocomposite, in which high dielectric constant copper phthalocyanine oligomer (o-CuPc) nanoparticles are incorporated into the block polyurethane (PU) matrix by the combination of "top down" and "bottom up" approaches, was realized. Such an approach enables the nanocomposite to exhibit colossal dielectric and electromechanical responses with very low volume fraction of the high dielectric constant o-CuPc nanofillers (˜3.5%) in the composite. In contrast, a simple blend of o-CuPc and PU composite with much higher o-CuPc content (˜16% of o-CuPc) shows much lower dielectric and electromechanical responses.

The Effect of Multi Wall Carbon Nanotubes on Some Physical Properties of Epoxy Matrix

NASA Astrophysics Data System (ADS)

Al-Saadi, Tagreed M.; hammed Aleabi, Suad; Al-Obodi, Entisar E.; Abdul-Jabbar Abbas, Hadeel

2018-05-01

This research involves using epoxy resin as a matrix for making a composite material, while the multi wall carbon nanotubes (MWNCTs) is used as a reinforcing material with different fractions (0.0,0.02, 0.04, 0.06) of the matrix weight. The mechanical ( hardness ), electrical ( dielectric constant, dielectric loss factor, dielectric strength, electrical conductivity ), and thermal properties (thermal conductivity ) were studied. The results showed the increase of hardness, thermal conductivity, electrical conductivity and break down strength with the increase of MWCNT concentration, but the behavior of dielectric loss factor and dielectric constant is opposite that.

Spatially resolved dielectric constant of confined water and its connection to the non-local nature of bulk water

NASA Astrophysics Data System (ADS)

Schaaf, Christian; Gekle, Stephan

2016-08-01

We use molecular dynamics simulations to compute the spatially resolved static dielectric constant of water in cylindrical and spherical nanopores as occurring, e.g., in protein water pockets or carbon nanotubes. For this, we derive a linear-response formalism which correctly takes into account the dielectric boundary conditions in the considered geometries. We find that in cylindrical confinement, the axial component behaves similar as the local density akin to what is known near planar interfaces. The radial dielectric constant shows some oscillatory features when approaching the surface if their radius is larger than about 2 nm. Most importantly, however, the radial component exhibits pronounced oscillations at the center of the cavity. These surprising features are traced back quantitatively to the non-local dielectric nature of bulk water.

Broadband dielectric spectroscopy on single-crystalline and ceramic CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Krohns, S.; Lunkenheimer, P.; Ebbinghaus, S. G.; Loidl, A.

2007-07-01

The authors present dielectric measurements of the colossal dielectric constant material CaCu3Ti4O12 extending up to 1.3GHz also covering so far only rarely investigated single-crystalline samples. Special emphasis is put on the second relaxation reported in several works on polycrystals, which the authors detect also in single crystals. For polycrystalline samples, the authors provide a recipe to achieve values of the dielectric constant as high as in single crystals.

Thermoinduced laser-assisted deposition of molybdenum from aqueous solutions

NASA Astrophysics Data System (ADS)

Kochemirovsky, Vladimir V.; Logunov, Lev S.; Zhigley, Elvira S.; Baranauskaite, Valeriia

2015-05-01

Local molybdenum deposit obtainment is promising for micro thermocouples creation on dielectric surfaces. This paper is dedicated to development of method of laser-induced molybdenum deposition from water-based solution of inorganic salt on Sitall st-50 and glass dielectric substrates, as well as research of solution composition, pH and substrate optical properties influence on result of laser-induced molybdenum deposition from solution. It was shown that depending on dielectric substrate type, as a result of laser-induced deposition metallic molybdenum or molybdenum dioxide deposit forms: molybdenum dioxide deposits in case of optically clear substrate and metallic molybdenum deposits in case of opaque glass-ceramics. While modelling interim case via using clouded glass, mixture of molybdenum and its oxide was successfully obtained.

Investigation of dielectric substrates on electrical and optical performance of wafer-scale graphene using non-contact methods

NASA Astrophysics Data System (ADS)

Wang, Dong; Ning, Jing; Zhang, Jincheng; Guo, Lixin; Hao, Yue

2017-10-01

Here we systemically discussed the influence of dielectric substrates on the surface morphology, electrical and optical performance of transferred graphene. The electrical properties were investigated using a microwave-probing technique without metal-graphene contact. We found that a complex mechanism governed the influence of the surface properties of the dielectric substrates, such as morphology, hydrophilicity, crystallinity, and polarization, on the performance of the graphene. We also found that graphene on r-Al2O3 was more effective for graphene-based devices with a high carrier mobility of ˜5000 cm2 V-1 s-1. This provides a new method to choose the most suitable substrate for fabricating graphene-based devices.

Polymer Nanocomposite Materials with High Dielectric Permittivity and Low Dielectric Loss Properties

NASA Astrophysics Data System (ADS)

Toor, Anju

Materials with high dielectric permittivity have drawn increasing interests in recent years for their important applications in capacitors, actuators, and high energy density pulsed power. Particularly, polymer-based dielectrics are excellent candidates, owing to their properties such as high breakdown strength, low dielectric loss, flexibility and easy processing. To enhance the dielectric permittivity of polymer materials, typically, high dielectric constant filler materials are added to the polymer. Previously, ferroelectric and conductive fillers have been mainly used. However, such systems suffered from various limitations. For example, composites based on ferroelectric materials like barium titanate, exhibited high dielectric loss, and poor saturation voltages. Conductive fillers are used in the form of powder aggregates, and they may show 10-100 times enhancement in dielectric constant, however these nanoparticle aggregates cause the dielectric loss to be significant. Also, agglomerates limit the volume fraction of fillers in polymer and hence, the ability to achieve superior dielectric constants. Thus, the aggregation of nanoparticles is a significant challenge to their use to improve the dielectric permittivity. We propose the use of ligand-coated metal nanoparticle fillers to enhance the dielectric properties of the host polymer while minimizing dielectric loss by preventing nanoparticle agglomeration. The focus is on obtaining uniform dispersion of nanoparticles with no agglomeration by utilizing appropriate ligands/surface functionalizations on the gold nanoparticle surface. Use of ligand coated metal nanoparticles will enhance the dielectric constant while minimizing dielectric loss, even with the particles closely packed in the polymer matrix. Novel combinations of materials, which use 5 nm diameter metal nanoparticles embedded inside high breakdown strength polymer materials are evaluated. High breakdown strength polymer materials are chosen to allow further exploration of these materials for energy storage applications. In summary, two novel nanocomposite materials are designed and synthesized, one involving polyvinylidene fluoride (PVDF) as the host polymer for potential applications in energy storage and the other with SU-8 for microelectronic applications. Scanning elec- tron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy and ultramicrotoming techniques were used for the material characterization of the nanocomposite materials. A homogeneous dispersion of gold nanoparticles with low particle agglomeration has been achieved. Fabricated nanoparticle polymer composite films showed the absence of voids and cracks. Also, no evidence of macro-phase separation of nanoparticles from the polymer phase was observed. This is important because nanoparticle agglomeration and phase separation from the polymer usually results in poor processability of films and a high defect density. Dielectric characterization of the nanocomposite materials showed enhancement in the dielectric constant over the base polymer values and low dielectric loss values were observed.

The fluid mechanics of continuous flow electrophoresis

NASA Technical Reports Server (NTRS)

Saville, D. A.

1990-01-01

The overall objective is to establish theoretically and confirm experimentally the ultimate capabilities of continuous flow electrophoresis chambers operating in an environment essentially free of particle sedimentation and buoyancy. The efforts are devoted to: (1) studying the effects of particle concentration on sample conductivity and dielectric constant. The dielectric constant and conductivity were identified as playing crucial roles in the behavior of the sample and on the resolving power and throughput of continuous flow devices; and (2) improving the extant mathematical models to predict flow fields and particle trajectories in continuous flow electrophoresis. A dielectric spectrometer was designed and built to measure the complex dielectric constant of a colloidal dispersion as a function of frequency between 500 Hz and 200 kHz. The real part of the signal can be related to the sample's conductivity and the imaginary part to its dielectric constant. Measurements of the dielectric constants of several different dispersions disclosed that the dielectric constants of dilute systems of the sort encountered in particle electrophoresis are much larger than would be expected based on the extant theory. Experiments were carried out to show that, in many cases, this behavior is due to the presence of a filamentary structure of small hairs on the particle surface. A technique for producing electrokinetically ideal synthetic latex particles by heat treating was developed. Given the ubiquitous nature of hairy surfaces with both cells and synthetic particles, it was deemed necessary to develop a theory to explain their behavior. A theory for electrophoretic mobility of hairy particles was developed. Finally, the extant computer programs for predicting the structure of electro-osmotically driven flows were extended to encompass flow channels with variable wall mobilities.

Temperature and pressure effects on capacitance probe cryogenic liquid level measurement accuracy

NASA Technical Reports Server (NTRS)

Edwards, Lawrence G.; Haberbusch, Mark

1993-01-01

The inaccuracies of liquid nitrogen and liquid hydrogen level measurements by use of a coaxial capacitance probe were investigated as a function of fluid temperatures and pressures. Significant liquid level measurement errors were found to occur due to the changes in the fluids dielectric constants which develop over the operating temperature and pressure ranges of the cryogenic storage tanks. The level measurement inaccuracies can be reduced by using fluid dielectric correction factors based on measured fluid temperatures and pressures. The errors in the corrected liquid level measurements were estimated based on the reported calibration errors of the temperature and pressure measurement systems. Experimental liquid nitrogen (LN2) and liquid hydrogen (LH2) level measurements were obtained using the calibrated capacitance probe equations and also by the dielectric constant correction factor method. The liquid levels obtained by the capacitance probe for the two methods were compared with the liquid level estimated from the fluid temperature profiles. Results show that the dielectric constant corrected liquid levels agreed within 0.5 percent of the temperature profile estimated liquid level. The uncorrected dielectric constant capacitance liquid level measurements deviated from the temperature profile level by more than 5 percent. This paper identifies the magnitude of liquid level measurement error that can occur for LN2 and LH2 fluids due to temperature and pressure effects on the dielectric constants over the tank storage conditions from 5 to 40 psia. A method of reducing the level measurement errors by using dielectric constant correction factors based on fluid temperature and pressure measurements is derived. The improved accuracy by use of the correction factors is experimentally verified by comparing liquid levels derived from fluid temperature profiles.

Effect of NiO and Light Intensity on Dielectric Constant of SiO2-B2O3-Bi2O3-Na2CO3 Glass Based on Silica Gel of Natural Sands

NASA Astrophysics Data System (ADS)

Diantoro, M.; Muniroh, Z.; Zaini, B.; Mustikasari, A. A.; Nasikhudin; Hidayat, A.; Taufiq, A.; Sunaryono; Mufti, N.

2017-05-01

The use of silica in various fields is significantly increasing. One common application is silica based functional glass which has naturally show specific dielectric, optical, and magnetic properties. Many studies have been performing to explore the influence of dopant, composition, and other processing parameters as well as employing various characterization. In the previous work, we report the use of silica from silica sands. To reduce the melting temperature, we used silica sol-gel beside the utilization of some oxides such as B2O3, Na2CO3, and Bi3O3. We also used NiO as dopant explore the glass properties. We have prepared a series of sample with the composition of 50SiO2-25B2O3-(6.5-x) Bi3O3-18.5 Na2CO3-xNiO (x = 0, 1, 2, 3 and 4 wt%). After weighting process, the composition was blended, then heated to 450 °C for 120 minutes and then raised at 950 °C for 60 minutes in the crucible. Then samples of glass separated from the crucible and in the characterization of the structure using the DTA, XRD, SEM-EDAX and FTIR and measuring dielectric constant using a capacitance meter. The increase of NiO dopant resulted in increasing the dielectric constant of glass. On the other hand, the dielectric constant gradually decreases with the increase of light intensity. One can be noted that the applied intensity give rise to the step-like decrease of the dielectric constant. Whereas, the increasing magnetic field indicate the increase of dielectric constant.

High voltage photoconductive switch package

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caporaso, George J.

2016-11-22

A photoconductive switch having a wide bandgap material substrate between opposing electrodes, and a doped dielectric filler that is in contact with both the electrodes and the substrate at the triple point. The dielectric filler material is doped with a conductive material to make it partially or completely conducting, to minimize the field enhancement near the triple point both when the substrate is not conducting in the "off" state and when the substrate is rendered conducting by radiation in the "on" state.

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanne, A.; Movva, H. C. P.; Kang, S.

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriersmore » as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.« less

Optical and microwave dielectric properties of pulsed laser deposited Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joseph, Andrews; Goud, J. Pundareekam; Raju, K. C. James

2016-05-23

Optical properties of pulsed laser deposited (PLD) sodium bismuth titanate thin films (NBT), are investigated at wavelengths of 190-2500 nm. Microwave dielectric properties were investigated using the Split Post Dielectric Resonator (SPDR) technique. At 10 GHz, the NBT films have a dielectric constant of 205 and loss tangent of 0.0373 at room temperature. The optical spectra analysis reveals that NBT thin films have an optical band gap E{sub g}=3.55 eV and it has a dielectric constant of 3.37 at 1000 nm with dielectric loss of 0.299. Hence, NBT is a promising candidate for photonic device applications.

Method of manufacturing flexible metallic photonic band gap structures, and structures resulting therefrom

DOEpatents

Gupta, Sandhya; Tuttle, Gary L.; Sigalas, Mihail; McCalmont, Jonathan S.; Ho, Kai-Ming

2001-08-14

A method of manufacturing a flexible metallic photonic band gap structure operable in the infrared region, comprises the steps of spinning on a first layer of dielectric on a GaAs substrate, imidizing this first layer of dielectric, forming a first metal pattern on this first layer of dielectric, spinning on and imidizing a second layer of dielectric, and then removing the GaAs substrate. This method results in a flexible metallic photonic band gap structure operable with various filter characteristics in the infrared region. This method may be used to construct multi-layer flexible metallic photonic band gap structures. Metal grid defects and dielectric separation layer thicknesses are adjusted to control filter parameters.

Accurate Measurements of the Dielectric Constant of Seawater at L Band

NASA Technical Reports Server (NTRS)

Lang, Roger; Zhou, Yiwen; Utku, Cuneyt; Le Vine, David

2016-01-01

This paper describes measurements of the dielectric constant of seawater at a frequency of 1.413 GHz, the center of the protected band (i.e., passive use only) used in the measurement of sea surface salinity from space. The objective of the measurements is to accurately determine the complex dielectric constant of seawater as a function of salinity and temperature. A resonant cylindrical microwave cavity in transmission mode has been employed to make the measurements. The measurements are made using standard seawater at salinities of 30, 33, 35, and 38 practical salinity units over a range of temperatures from 0 degree C to 35 degree C in 5 degree C intervals. Repeated measurements have been made at each temperature and salinity. Mean values and standard deviations are then computed. The total error budget indicates that the real and imaginary parts of the dielectric constant have a combined standard uncertainty of about 0.3 over the range of salinities and temperatures considered. The measurements are compared with the dielectric constants obtained from the model functions of Klein and Swift and those of Meissner and Wentz. The biggest differences occur at low and high temperatures.

The 20 GHz circularly polarized, high temperature superconducting microstrip antenna array

NASA Technical Reports Server (NTRS)

Morrow, Jarrett D.; Williams, Jeffery T.; Long, Stuart A.; Wolfe, John C.

1994-01-01

The primary goal was to design and characterize a four-element, 20 GHz, circularly polarized microstrip patch antenna fabricated from YBa2Cu3O(x) superconductor. The purpose is to support a high temperature superconductivity flight communications experiment between the space shuttle orbiter and the ACTS satellite. This study is intended to provide information into the design, construction, and feasibility of a circularly polarized superconducting 20 GHz downlink or cross-link antenna. We have demonstrated that significant gain improvements can be realized by using superconducting materials for large corporate fed array antennas. In addition, we have shown that when constructed from superconducting materials, the efficiency, and therefore the gain, of microstrip patches increases if the substrate is not so thick that the dominant loss mechanism for the patch is radiation into the surface waves of the conductor-backed substrate. We have considered two design configurations for a superconducting 20 GHz four-element circularly polarized microstrip antenna array. The first is the Huang array that uses properly oriented and phased linearly polarized microstrip patch elements to realize a circularly polarized pattern. The second is a gap-coupled array of circularly polarized elements. In this study we determined that although the Huang array operates well on low dielectric constant substrates, its performance becomes extremely sensitive to mismatches, interelement coupling, and design imperfections for substrates with high dielectric constants. For the gap-coupled microstrip array, we were able to fabricate and test circularly polarized elements and four-element arrays on LaAlO3 using sputtered copper films. These antennas were found to perform well, with relatively good circular polarization. In addition, we realized a four-element YBa2Cu3O(x) array of the same design and measured its pattern and gain relative to a room temperature copper array. The patterns were essentially the same as that for the copper array. The measured gain of the YBCO antenna was greater than that for the room temperature copper design at temperatures below 82K, reaching a value of 3.4 dB at the lowest temperatures.

Dielectric characteristics of Mn-doped LaTiO3+δ ceramics

NASA Astrophysics Data System (ADS)

Chen, Yan; Cui, Yimin

A series of ceramic composites of Mn-doped La1- x MnxTiO3+ δ and LaMnxTi1- x O3+ δ (x = 0.1, 0.2) were synthesized by conventional solid-state reaction method. The low-frequency complex dielectric properties of the composites were investigated as functions of temperature (77 K <= T <= 360 K) and frequency (100 Hz <= f <= 1 MHz), respectively. The dielectric constant of A-site doped samples is higher than that of B-site doped samples. The loss tangent of low doped samples is much less than that of high doped samples. The A-site doped composites exhibit intrinsic dielectric response with a dielectric constant of 40 in the temperature below 250 K. Interestingly, the dielectric constants of B-site doped ceramics increase slightly in the temperature range from 77 to 360 K. And it is clearly observed that extraordinarily high dielectric loss tangent ( 6) appear at low frequency (100 Hz) in LaMn0.2Ti0.8O3+ δ , which is 8 times larger than that of LaMn0.1Ti0.9O3+ δ , which indicates that the doped content can affect the intrinsic dielectric characteristics significantly.

Empirical Estimation of Local Dielectric Constants: Toward Atomistic Design of Collagen Mimetic Peptides

PubMed Central

Pike, Douglas H.; Nanda, Vikas

2017-01-01

One of the key challenges in modeling protein energetics is the treatment of solvent interactions. This is particularly important in the case of peptides, where much of the molecule is highly exposed to solvent due to its small size. In this study, we develop an empirical method for estimating the local dielectric constant based on an additive model of atomic polarizabilities. Calculated values match reported apparent dielectric constants for a series of Staphylococcus aureus nuclease mutants. Calculated constants are used to determine screening effects on Coulombic interactions and to determine solvation contributions based on a modified Generalized Born model. These terms are incorporated into the protein modeling platform protCAD, and benchmarked on a data set of collagen mimetic peptides for which experimentally determined stabilities are available. Computing local dielectric constants using atomistic protein models and the assumption of additive atomic polarizabilities is a rapid and potentially useful method for improving electrostatics and solvation calculations that can be applied in the computational design of peptides. PMID:25784456

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

NASA Astrophysics Data System (ADS)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low dielectric loss (0.007), and low leakage current (<2×10-8 A/cm2 at 100 kV/cm) were achieved for BST thin film capacitors with Cu-based electrodes.

Low percolation transitions in carbon nanotube networks dispersed in a polymer matrix: dielectric properties, simulations and experiments.

PubMed

Simoes, Ricardo; Silva, Jaime; Vaia, Richard; Sencadas, Vítor; Costa, Pedro; Gomes, João; Lanceros-Méndez, Senentxu

2009-01-21

The low concentration behaviour and the increase of the dielectric constant in carbon nanotubes/polymer nanocomposites near the percolation threshold are still not well understood. In this work, a numerical model has been developed which focuses on the effect of the inclusion of conductive fillers in a dielectric polymer matrix on the dielectric constant and the dielectric strength. Experiments have been carried out in carbon nanotubes/poly(vinylidene fluoride) nanocomposites in order to compare to the simulation results. This work shows how the critical concentration is related to the formation of capacitor networks and that these networks give rise to high variations in the electrical properties of the composites. Based on numerical studies, the dependence of the percolation transition on the preparation of the nanocomposite is discussed. Finally, based on numerical and experimental results, both ours and from other authors, the causes of anomalous percolation behaviour of the dielectric constant are identified.

Dielectric properties of doping-free NaMn{sub 7}O{sub 12}: Origin of the observed colossal dielectric constant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cabassi, R.; Bolzoni, F.; Gauzzi, A.

2006-07-15

The semiconducting NaMn{sub 7}O{sub 12} is a doping-free compound with several coexistent properties such as orbital ordering, charge ordering, and magnetic orderings of different types. We investigated its dielectric response by means of frequency impedance measurements in the range from 20 Hz to 1 MHz. Standard measurements on metallized samples exhibit an apparent colossal dielectric constant (CDC) with an {epsilon}{sub R} value of several thousands at low frequencies, but a careful equivalent circuit analysis allows one to ascribe the observed CDC to the effect of a depletion layer on the metal-semiconductor junctions. We bypass this effect by means of amore » nonstandard technique employing mica linings: the resulting dielectric behavior exhibits the presence of the charge ordering transition at T{sub CO}=176 K and shows a net bulk dielectric constant value {epsilon}{sub R}{approx_equal}68 at room temperature.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahesh, P., E-mail: pamu@iitg.ernet.in; Subhash, T., E-mail: pamu@iitg.ernet.in; Pamu, D., E-mail: pamu@iitg.ernet.in

We report the dielectric properties of (K{sub 0.5}Na{sub 0.5})NbO{sub 3} ceramics doped with x wt% of Dy{sub 2}O{sub 3} (x= 0.0-1.5 wt%) using the broadband dielectric spectroscopy. The X-ray diffraction studies showed the formation of perovskite structure signifying that Dy{sub 2}O{sub 3} diffuse into the KNN lattice. Samples doped with x > 0.5 wt% exhibit smaller grain size and lower relative densities. The dielectric properties of KNN ceramics doped with Dy{sub 2}O{sub 3} are enhanced by increasing the Dy{sup 3+} content; among the compositions studied, x = 0.5 wt% exhibited the highest dielectric constant and lowest loss at 1MHz overmore » the temperature range of 30°C to 400°C. All the samples exhibit maximum dielectric constant at the Curie temperature (∼ 326°C) and a small peak in the dielectric constant at around 165°C is due to a structural phase transition.« less

Origin of the colossal dielectric permittivity and magnetocapacitance in LuFe2O4

NASA Astrophysics Data System (ADS)

Ren, P.; Yang, Z.; Zhu, W. G.; Huan, C. H. A.; Wang, L.

2011-04-01

We report the detailed study on the colossal dielectric constant and magnetocapacitance of LuFe2O4. The experimental results indicate that the large dielectric constant of LuFe2O4 is originated from two sources, (1) Maxwell Wagner-type contributions of depletion layers at grain boundaries and the interfaces between sample and contacts, (2) AC response of the constant phase element in the bulk. A detailed equivalent circuit analysis indicates that the conductivity variation can be responsible for the observed "magnetocapacitance."

The p- T phase diagram of KNbO 3 by a dielectric constant measurement

NASA Astrophysics Data System (ADS)

Kobayashi, Y.; Endo, S.; Deguchi, K.; Ming, L. C.; Zou, G.

2001-11-01

A dielectric constant measurement was carried out on perovskite-type ferroelectrics KNbO 3 over a wide range of temperature under high pressure. The temperature- and pressure-dependence of the dielectric constant clarified that all temperatures of the transitions from the ferroelectric rhombohedral to orthorhombic, to tetragonal and then to the paraelectric cubic phase, decrease with increasing pressure. These results indicate that the orthorhombic-tetragonal transition takes place at 8.5 GPa and the tetragonal-cubic transition at 11 GPa, at room temperature.

Fluoro-polymer functionalized graphene for flexible ferroelectric polymer-based high-k nanocomposites with suppressed dielectric loss and low percolation threshold.

PubMed

Yang, Ke; Huang, Xingyi; Fang, Lijun; He, Jinliang; Jiang, Pingkai

2014-12-21

Flexible nanodielectric materials with high dielectric constant and low dielectric loss have huge potential applications in the modern electronic and electric industry. Graphene sheets (GS) and reduced-graphene oxide (RGO) are promising fillers for preparing flexible polymer-based nanodielectric materials because of their unique two-dimensional structure and excellent electrical and mechanical properties. However, the easy aggregation of GS/RGO significantly limits the potential of graphene in enhancing the dielectric constant of polymer composites. In addition, the poor filler/matrix nanoscale interfacial adhesion also causes difficulties in suppressing the dielectric loss of the composites. In this work, using a facile and environmentally friendly approach, polydopamine coated RGO (PDA-RGO) and fluoro-polymer functionalized RGO (PF-PDA-RGO) were prepared. Compared with the RGO prepared by the conventional methods [i.e. hydrazine reduced-graphene oxide (H-RGO)] and PDA-RGO, the resulting PF-PDA-RGO nanosheets exhibit excellent dispersion in the ferroelectric polymer matrix [i.e. poly(vinylidene fluoride-co-hexafluoro propylene), P(VDF-HFP)] and strong interfacial adhesion with the matrix, leading to a low percolation threshold (fc = 1.06 vol%) and excellent flexibility for the corresponding nanocomposites. Among the three nanocomposites, the P(VDF-HFP)/PF-PDA-RGO nanocomposites exhibited the optimum performance (i.e. simultaneously having high dielectric constant and low dielectric loss). For instance, at 1000 Hz, the P(VDF-HFP) nanocomposite sample with 1.0 vol% PF-PDA-RGO has a dielectric constant of 107.9 and a dielectric loss of 0.070, showing good potential for dielectric applications. Our strategy provides a new pathway to prepare high performance flexible nanodielectric materials.

Origin of the colossal dielectric response of Pr0.6 Ca0.4 Mn O3

NASA Astrophysics Data System (ADS)

Biškup, N.; de Andrés, A.; Martinez, J. L.; Perca, C.

2005-07-01

We report the detailed study of dielectric response of Pr0.6Ca0.4MnO3 (PCMO), a member of the manganite family showing colossal magnetoresistance. Measurements have been performed on four polycrystalline samples and four single crystals, allowing us to compare and extract the essence of dielectric response in the material. High-frequency dielectric function is found to be ɛHF=30 , as expected for the perovskite material. Dielectric relaxation is found in the frequency window of 20Hzto1MHz at temperatures of 50-200K that yields to colossal low-frequency dielectric function, i.e., the static dielectric constant. The static dielectric constant is always colossal, but varies considerably in different samples from ɛ(0)=103to105 . The measured data can be simulated very well by blocking (surface barrier) capacitance in series with sample resistance. This indicates that the large dielectric constant in PCMO arises from the Schottky barriers at electrical contacts. Measurements in magnetic field and with dc bias support this interpretation. Colossal magnetocapacitance observed in the title compound is thus attributed to extrinsic effects. Weak anomaly at the charge ordering temperature can also be attributed to interplay of sample and contact resistance. We comment on our results in the framework of related studies by other groups.

Structural and Electrical Characterization of SiO2 Gate Dielectrics Deposited from Solutions at Moderate Temperatures in Air.

PubMed

Esro, Mazran; Kolosov, Oleg; Jones, Peter J; Milne, William I; Adamopoulos, George

2017-01-11

Silicon dioxide (SiO 2 ) is the most widely used dielectric for electronic applications. It is usually produced by thermal oxidation of silicon or by using a wide range of vacuum-based techniques. By default, the growth of SiO 2 by thermal oxidation of silicon requires the use of Si substrates whereas the other deposition techniques either produce low quality or poor interface material and mostly require high deposition or annealing temperatures. Recent investigations therefore have focused on the development of alternative deposition paradigms based on solutions. Here, we report the deposition of SiO 2 thin film dielectrics deposited by spray pyrolysis in air at moderate temperatures of ≈350 °C from pentane-2,4-dione solutions of SiCl 4 . SiO 2 dielectrics were investigated by means of UV-vis absorption spectroscopy, spectroscopic ellipsometry, XPS, XRD, UFM/AFM, admittance spectroscopy, and field-effect measurements. Data analysis reveals smooth (R RMS < 1 nm) amorphous films with a dielectric constant of about 3.8, an optical band gap of ≈8.1 eV, leakage current densities in the order of ≈10 -7 A/cm 2 at 1 MV/cm, and high dielectric strength in excess of 5 MV/cm. XPS measurements confirm the SiO 2 stoichiometry and FTIR spectra reveal features related to SiO 2 only. Thin film transistors implementing spray-coated SiO 2 gate dielectrics and C 60 and pentacene semiconducting channels exhibit excellent transport characteristics, i.e., negligible hysteresis, low leakage currents, high on/off current modulation ratio on the order of 10 6 , and high carrier mobility.

Terahertz metamaterials

DOEpatents

Peralta, Xomalin Guaiuli; Brener, Igal; O'Hara, John; Azad, Abul; Smirnova, Evgenya; Williams, John D.; Averitt, Richard D.

2014-08-12

Terahertz metamaterials comprise a periodic array of resonator elements disposed on a dielectric substrate or thin membrane, wherein the resonator elements have a structure that provides a tunable magnetic permeability or a tunable electric permittivity for incident electromagnetic radiation at a frequency greater than about 100 GHz and the periodic array has a lattice constant that is smaller than the wavelength of the incident electromagnetic radiation. Microfabricated metamaterials exhibit lower losses and can be assembled into three-dimensional structures that enable full coupling of incident electromagnetic terahertz radiation in two or three orthogonal directions. Furthermore, polarization sensitive and insensitive metamaterials at terahertz frequencies can enable new devices and applications.

Electrical applications of CVD diamond films

NASA Astrophysics Data System (ADS)

Fujimori, Naoji

Electronics applications of CVD diamond films are reported. The properties of epitaxial diamond films are affected by the orientation of the substrate and the deposition conditions. Boron-doped epitaxial films are found to have the same characteristics as natural IIb diamonds. An LED and an FET were successfully fabricated using boron-doped epitaxial films and Schottky junctions. However, these devices did not exhibit satisfactory properties. Other applications of CVD diamond films include speaker diaphragms (as both a thin-film coating and a free-standing film), and as an ideal packaging material (due to its high thermal conductivity and low dielectric constant).

Design, simulation and analysis a microstrip antenna using PU-EFB substrate

NASA Astrophysics Data System (ADS)

Mahmud, S. N. S.; Jusoh, M. A.; Jasim, S. E.; Zamani, A. H.; Abdullah, M. H.

2018-04-01

A low cost, light weight and easy to fabricate are the most important factor for future antennas. Microstrip patch antennas offer these advantages and suitable for communication and sensor application. This paper presents a design of simple microstrip patch antenna working on operating frequency of 2.4 GHz. The designed process has been carried out using MATLAB and HFSS software by entering 2.3 for the dielectric constant of PU-EFB. The results showed that high return loss, low bandwidth and good antenna radiation efficiency of which are -21.98 dB, 0.28 dB and 97.33%, respectively.

Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

PubMed

Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

2013-10-18

Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The nanocrystal/furfuryl alcohol dispersions are suitable for the fabrication of thin films by chemical deposition techniques, including spin-coating, printing or a spraying process. To demonstrate the application of this technique to device fabrication, a multilayer capacitor with capacitance of 0.83 nF mm(-2) at 1 MHz is presented.

An empirical model for the complex dielectric permittivity of soils as a function of water content

NASA Technical Reports Server (NTRS)

Wang, J. R.; Chmugge, T. J.

1978-01-01

The recent measurements on the dielectric properties of soils shows that the variation of dielectric constant with moisture content depends on soil types. The observed dielectric constant increases only slowly with moisture content up to a transition point. Beyond the transition it increases rapidly with moisture content. The moisture value of transition region was found to be higher for high clay content soils than for sandy soils. Many mixing formulas were compared with, and were found incompatible with, the measured dielectric variations of soil-water mixtures. A simple empirical model was proposed to describe the dielectric behavior of ths soil-water mixtures. The relationship between transition moisture and wilting point provides a means of estimating soil dielectric properties on the basis of texture information.

Size-dependent Hamaker constants for silver and gold nanoparticles

NASA Astrophysics Data System (ADS)

Pinchuk, Pavlo; Jiang, Ke

2015-08-01

Hamaker-Lifshitz constants are material specific constants that are used to calculate van der Waals interaction forces between small particles in solution. Typically, these constants are size-independent and material specific. According to the Lifshitz theory, the Hamaker-Lifshitz constants can be calculated by taking integrals that include the dielectric permittivity, as a function of frequency, of the interacting particles and the medium around particles. The dielectric permittivity of interacting metal nanoparticles can be calculated using the Drude model, which is based on the assumption of motion of free conducting electrons. For bulk metals, the Drude model does not predict any sizedependence of the dielectric permittivity. However, the conducting electrons in small noble metal nanoparticles (R ~ 10nm) exhibit surface scattering, which changes the complex permittivity function. In this work, we show theoretically that scattering of the free conducting electrons inside silver and gold nanoparticles with the size of 1 - 50 nm leads to size-dependent dielectric permittivity and Hamaker-Lifshitz constants. We calculate numerically the Hamaker-Lifshitz constants for silver and gold nanoparticles with different diameters. The results of the study might be of interests for understanding colloidal stability of metal nanoparticles.

Fast process flow, on-wafer interconnection and singulation for MEPV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Nielson, Gregory N.; Cruz-Campa, Jose Luis

2017-01-31

A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality ofmore » metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.« less

Fast process flow, on-wafer interconnection and singulation for MEPV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Nielson, Gregory N.; Cruz-Campa, Jose Luis

2017-08-29

A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality ofmore » metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.« less

Effect of the addition of B{sub 2}O{sub 3} and BaO-B{sub 2}O{sub 3}-SiO{sub 2} glasses on the microstructure and dielectric properties of giant dielectric constant material CaCu{sub 3}Ti{sub 4}O{sub 12}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shri Prakash, B.; Varma, K.B.R.

2007-06-15

The effect of the addition of glassy phases on the microstructure and dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramics was investigated. Both single-component (B{sub 2}O{sub 3}) and multi-component (30 wt% BaO-60 wt% B{sub 2}O{sub 3}-10 wt% SiO{sub 2} (BBS)) glass systems were chosen to study their effect on the density, microstructure and dielectric properties of CCTO. Addition of an optimum amount of B{sub 2}O{sub 3} glass facilitated grain growth and an increase in dielectric constant. However, further increase in the B{sub 2}O{sub 3} content resulted in its segregation at the grain boundaries associated with a reduction in themore » grain size. In contrast, BBS glass addition resulted in well-faceted grains and increase in the dielectric constant and decrease in the dielectric loss. An internal barrier layer capacitance (IBLC) model was invoked to correlate the dielectric constant with the grain size in these samples. - Graphical abstract: Scanning electron micrograph of 30 wt% BaO-60 wt% B{sub 2}O{sub 3}-10 wt% SiO{sub 2} (BBS) glass-added CaCu{sub 3}Ti{sub 4}O{sub 12} ceramic on sintering.« less

Molecular mobility, morphology, and ion conduction in ionomers for electroactive devices

NASA Astrophysics Data System (ADS)

Tudryn, Gregory J.

A sequential study of ion-containing polymers capable of ion solvation with varied ion content, dielectric constant, and counterions is presented in this dissertation in order to compare ion transport properties in ionomers with various ionic interactions. Structure-property relationships in these ion containing polymers are defined using x-ray scattering, rheology and dielectric spectroscopy, enabling the quantification of ion transport dynamics. Poly(ethylene oxide), (PEO) based ionomers are investigated in order to probe the relation between ion conduction and segmental relaxation, and copolymers of PEO and Poly(tetramethylene oxide), (PTMO) further develop an understanding of the trade-off between ion solvation and segmental dynamics. Ionomers with ionic liquid counterions probe diffuse charge interactions and steric effects on ion transport, and incorporation of ionic liquids into ionomer membranes such as Nafion provides desirable thermal and ion conducting properties which extend the use of such membranes for electroactive devices. PEO ionomers exhibit a strong relation between ionic conductivity and segmental dynamics, providing insight that the glass transition temperature, Tg, dominates the ion conduction mechanism. Increasing temperature induces aggregation of ionic groups as evidenced by the static dielectric constant and X-ray scattering as a function of temperature, revealing the contribution of ionic dipoles in the measured dielectric constant. The trade-off between ion solvation and fast polymer segmental dynamics are quantified in copolymer ionomers of PEO and lower Tg PTMO. While conducting ion content remains nearly unchanged, conductivity is lowered upon incorporation of PTMO, because the vast majority of the PTMO microphase separates from the PEO-rich microdomain that remains continuous and contributes most of the ion conduction. Dielectric constants and X-ray scattering show consistent changes with temperature that suggest a cascading aggregation process in Na ionomers as ionic dipoles thermally randomize and lower the measured dielectric constant of the medium, leading to further aggregation. We observe amplified microphase-separation through ionic groups preferentially solvated by PEO chains, as seen in block copolymers with added salt. Even at 25%PEO / 75%PTMO the ionomers have VFT temperature dependence of conducting ion mobility, meaning that the 25% PEO/ion microphase is still continuous A model is developed to describe the frequency dependent storage and loss modulus and the delay in Rouse motion due to ion association lifetime, as functions of ion content and molecular weight for our low molecular weight ionomers. The ion rearrangement relaxation in dielectric spectroscopy is clearly the ion association lifetime that controls terminal dynamics in linear viscoelasticity, allowing a simple sticky Rouse model, using the most-probable distribution based on NMR Mn, to fully describe master curves of the frequency dependent storage and loss modulus. Using insight from ionic interaction strength, ionic liquids are used as counterions, effectively plasticizing the ionomers without added solvent. Ionic interactions were weakened with increasing counterion size, and with modification of cations using ether-oxygen, promoting self-solvation, which increases conducting ion density by an order of magnitude. Room temperature ionic liquids were subsequently used in combination with NafionRTM membranes as electroactive substrates to correlate ion transport to morphology as a function of volume fraction of ionic liquid. This study illuminated the critical volume uptake of ionic liquid in Nafion, identifying percolation of ionic pathways and a significant increase in dielectric constant at low frequencies, indicating an increase in the number density of ions capable of polarizing at the electrode surface. Consequently, the fundamental information obtained about the structure-property relations of ionomers can be used to predict and design advanced ion-containing polymers to be used in battery membranes and a variety of electroactive devices, including actuators and electromechanical sensors.

An Improved Dielectric Constant Cell for Use in Student and Research Laboratories.

ERIC Educational Resources Information Center

Thompson, H. Bradford.; Walmsley, Judith A.

1979-01-01

Describes the latest stage in the design of an economical dielectric constant cell, tested in both instructional and research applications, that is suitable for student laboratories and for precision research measurements. (BT)

Laser-driven flyer plate

DOEpatents

Paisley, Dennis L.

1991-01-01

Apparatus for producing high velocity flyer plates involving placing a layer of dielectric material between a first metal foil and a second metal foil. With laser irradiation through an optical substrate, the first metal foil forms a plasma in the area of the irradiation, between the substrate and the solid portion of the first metal foil. When the pressure between the substrate and the foil reaches the stress limit of the dielectric, the dielectric will break away and launch the flyer plate out of the second metal foil. The mass of the flyer plate is controlled, as no portion of the flyer plate is transformed into a plasma.

Advanced concepts for transformers pressboard dielectric constant and mechanical strength

NASA Astrophysics Data System (ADS)

1982-03-01

Of the numerous electrical considerations in a material, the value of the dielectric constant serves as an important criterion in designing proper insulation systems. Ways to reduce the dielectric constant of solid (fibrous) insulating materials were investigated. A literature search was made on cellulosic and synthetic fibers and also additives which offered the potential for dielectric constant reduction of the solid insulation. Sample board structures were produced in the laboratory and tested for electrical, mechanical and chemical characteristics. Electrical tests determined the suitability of the material at transformer test and operating conditions. The mechanical tests established the physical characteristics of the modified board structures. Chemical tests checked the conductivity of the aqueous extract, acidity, and ash content. Further, compatibility with transformer oil and some aging tests were performed. An actual computer transformer design was made based on one of the modified board structures and the reduction in core steel and transformer losses were shown.

Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

NASA Astrophysics Data System (ADS)

Kiyota, Yuji; Itaka, Kenji; Iwashita, Yuta; Adachi, Tetsuya; Chikyow, Toyohiro; Ogura, Atsushi

2011-06-01

We investigated zirconia (ZrO2)-based material libraries in search of new dielectric materials for dynamic random-access memory (DRAM) by combinatorial-pulsed laser deposition (combi-PLD). We found that the substitution of yttrium (Y) to Zr sites in the ZrO2 system suppressed the leakage current effectively. The metal-insulator-metal (MIM) capacitor property of this system showed a leakage current density of less than 5×10-7 A/cm2 and the dielectric constant was 20. Moreover, the addition of titanium (Ti) or tantalum (Ta) to this system caused the dielectric constant to increase to ˜25 within the allowed leakage level of 5×10-7 A/cm2. Therefore, Zr-Y-Ti-O and Zr-Y-Ta-O systems have good potentials for use as new materials with high dielectric constants of DRAM capacitors instead of silicon dioxides (SiO2).

Reflection and Refraction of Light in Absorbing Media

NASA Astrophysics Data System (ADS)

Katsumata, Koichi; Sasaki, Shosuke

2018-05-01

The results of a rigorous calculation of optical phenomena in absorbing media based on Maxwell's equations are reported. In the case of an absorbing dielectric, we assume a complex dielectric constant. We find an expression for the angle of refraction as a function of the incident angle and the real and imaginary parts of the complex dielectric constant, all of which are real. The amplitudes of the reflected and transmitted waves are calculated on the same footing. These amplitudes are shown to be complex, from which we deduce the magnitude and phase change of the reflection and transmission coefficients. The same argument applies to an absorbing magnetic material if we replace the complex dielectric constant by a complex magnetic permeability.

Tungsten-doped thin film materials

DOEpatents

Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

2003-12-09

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

Effects of Cr/Zn Substitutions on Dielectric Properties of CaCu{sub 3}Ti{sub 4}O{sub 12}(CCTO) Ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajmi, R.; Yahya, A. K.; Deni, M. S. M.

2010-07-07

Effects of Zn and Cr substitutions on dielectric properties of CaCu{sub 3-x}Zn{sub x}Ti{sub 4-y}Cr{sub y}O{sub 12} ceramics are reported. Dielectric measurements at room temperature for un-substituted CaCu{sub 3-x}Zn{sub x}Ti{sub 4-y}Cr{sub y}O{sub 12}(x = 0, y = 0) between 10{sup 2}-10{sup 6} Hz showed dielectric constant of 2.7x10{sup 4} at 10{sup 2} Hz. Substitution of Zn for Cu in CaCu{sub 3-x}Zn{sub xTi{sub 4{sub -{sub yCr{sub yO{sub 1{sub 2}}}}}}}(y = 0, x = 0.10, 0.50)caused dielectric constant to drop with increasing x. Cr substitution at Ti-site in CaCu{sub 3-x}Zn{sub xTi{sub 4{sub -{sub yCr{sub yO{sub 1{sub 2}}}}}}}(x = 0, x = 0,) alsomore » caused decrease in dielectric constant. However, at x = 0.50, the dielectric constant at low frequency was enhanced compared to the un-substituted sample. Our results indicate that Cu and Ti sites play an important role in the formation of Internal Barrier Layer Capacitance (IBLC) in CCTO.« less

Dielectric constant of ionic solutions: a field-theory approach.

PubMed

Levy, Amir; Andelman, David; Orland, Henri

2012-06-01

We study the variation of the dielectric response of a dielectric liquid (e.g. water) when a salt is added to the solution. Employing field-theoretical methods, we expand the Gibbs free energy to first order in a loop expansion and calculate self-consistently the dielectric constant. We predict analytically the dielectric decrement which depends on the ionic strength in a complex way. Furthermore, a qualitative description of the hydration shell is found and is characterized by a single length scale. Our prediction fits rather well a large range of concentrations for different salts using only one fit parameter related to the size of ions and dipoles.

Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

NASA Astrophysics Data System (ADS)

Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

2018-03-01

In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

Reversible dielectric property degradation in moisture-contaminated fiber-reinforced laminates

NASA Astrophysics Data System (ADS)

Rodriguez, Luis A.; García, Carla; Fittipaldi, Mauro; Grace, Landon R.

2016-03-01

The potential for recovery of dielectric properties of three water-contaminated fiber-reinforced laminates is investigated using a split-post dielectric resonant technique at X-band (10 GHz). The three material systems investigated are bismaleimide (BMI) reinforced with an eight-harness satin weave quartz fabric, an epoxy resin reinforced with an eight- harness satin weave glass fabric (style 7781), and the same epoxy reinforced with a four-harness woven glass fabric (style 4180). A direct correlation between moisture content, dielectric constant, and loss tangent was observed during moisture absorption by immersion in distilled water at 25 °C for five equivalent samples of each material system. This trend is observed through at least 0.72% water content by weight for all three systems. The absorption of water into the BMI, 7781 epoxy, and 4180 epoxy laminates resulted in a 4.66%, 3.35%, and 4.01% increase in dielectric constant for a 0.679%, 0.608%, and 0.719% increase in water content by weight, respectively. Likewise, a significant increase was noticed in loss tangent for each material. The same water content is responsible for a 228%, 71.4%, and 64.1% increase in loss tangent, respectively. Subsequent to full desorption through drying at elevated temperature, the dielectric constant and loss tangent of each laminate exhibited minimal change from the dry, pre-absorption state. The dielectric constant and loss tangent change after the absorption and desorption cycle, relative to the initial state, was 0.144 % and 2.63% in the BMI, 0.084% and 1.71% in the style 7781 epoxy, and 0.003% and 4.51% in the style 4180 epoxy at near-zero moisture content. The similarity of dielectric constant and loss tangent in samples prior to absorption and after desorption suggests that any chemical or morphological changes induced by the presence of water have not caused irreversible changes in the dielectric properties of the laminates.

Effect of fiber content on the thermal conductivity and dielectric constant of hair fiber reinforced epoxy composite

NASA Astrophysics Data System (ADS)

Prasad Nanda, Bishnu; Satapathy, Alok

2018-03-01

This paper reports on the dielectric and thermal properties of hair fibers reinforced epoxy composites. Hair is an important part of human body which also offers protection to the human body. It is also viewed as a biological waste which is responsible for creating environmental pollution due to its low decomposition rate. But at the same time it has unique microstructural, mechanical and thermal properties. In the present work, epoxy composites are made by solution casting method with different proportions of short hair fiber (SHF). Effects of fiber content on the thermal conductivity and dielectric constant of epoxy resin are studied. Thermal conductivities of the composites are obtained using a UnithermTM Model 2022 tester. An HIOKI-3532-50 Hi Tester Elsier Analyzer is used for measuring the capacitance of the epoxy-SHF composite, from which dielectric constant (Dk) of the composite are calculated. A reduction in thermal conductivity of the composite is noticed with the increase in wt. % of fiber. The dielectric constant value of the composites also found to be significantly affected by the fiber content.

Magnetically tunable liquid dielectric with giant dielectric permittivity based on core-shell superparamagnetic iron oxide.

PubMed

Vinayasree, S; Nitha, T S; Tiwary, C S; Ajayan, P M; Joy, P A; Anantharaman, M R

2018-06-29

A liquid dielectric based on a core-shell architecture having a superparamagnetic iron oxide core and a shell of silicon dioxide was synthesized. The frequency dependence of dielectric properties was evaluated for different concentrations of iron oxide. The dependence of magnetic field on the dielectric properties was also studied. Aqueous ferrofluid exhibited a giant dielectric constant of 6.4 × 10 5 at 0.1 MHz at a concentration of 0.2 vol% and the loss tangent was 3. The large rise in dielectric constant at room temperature is modelled and explained using percolation theory and Maxwell-Wagner-Sillars type polarization. The ferrofluid is presumed to consist of nanocapacitor networks which are wired in series along the lateral direction and parallel along longitudinal direction. On the application of an external magnetic field, the chain formation and its alignment results in the variation of dielectric permittivity.

Size- and temperature-dependent Hamaker constants for heterogeneous systems of interacting nanoparticles

NASA Astrophysics Data System (ADS)

Pinchuk, P.; Pinchuk, A. O.

2016-09-01

Hamaker-Lifshitz constants are used to calculate van der Waals interaction forces between small particles in solution. Typically, these constants are size-independent and material specific. According to the Lifshitz theory, the Hamaker-Lifshitz constants can be calculated by taking integrals that include the dielectric permittivity, as a function of frequency, of the interacting particles and the medium around particles. The dielectric permittivity of interacting metal nanoparticles can be calculated using the free-electron Drude model for metals. For bulk metals, the Drude model does is size independent. However, the conducting electrons in small metal nanoparticles exhibit surface scattering, which changes the complex dielectric permittivity function. Additionally, the Drude model can be modified to include temperature dependence. That is, an increase in temperature leads to thermal volume expansion and increased phonon population, which affect the scattering rate of the electrons and the plasma frequency. Both of these terms contribute significantly to the Drude model for the dielectric permittivity of the particles. In this work, we show theoretically that scattering of the free conducting electrons inside noble metal nanoparticles with the size of 1 - 50 nm leads to size-dependent dielectric permittivity and Hamaker-Lifshitz constants. In addition, we calculate numerically the Hamaker-Lifshitz constants for a variety of temperatures. The results of the study might be of interest for understanding colloidal stability of metal nanoparticles.

Characterization of a new transparent-conducting material of ZnO doped ITO thin films

NASA Astrophysics Data System (ADS)

Ali, H. M.

2005-11-01

Thin films of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass substrates by Electron beam evaporation technique. The effect of doping and substrate deposition temperature was found to have a significant effect on the structure, electrical and optical properties of ZnO doped ITO films. The average optical transmittance has been increased with in- creasing the substrate temperature. The maximum value of transmittance is greater than 84% in the visible region and 85% in the NIR region obtained for film with Zn/ITO = 0.13 at substrate temperature 200 °C. The dielectric constant, average excitation energy for electronic transitions (E o), the dispersion energy (E d), the long wavelength refractive index (n ), average oscillator wave length ( o) and oscillator strength S _o for the thin films were determined and presented in this work.

Characterization of barium strontium titanate thin films on sapphire substrate prepared via RF magnetron sputtering system

NASA Astrophysics Data System (ADS)

Jamaluddin, F. W.; Khalid, M. F. Abdul; Mamat, M. H.; Zoolfakar, A. S.; Zulkefle, M. A.; Rusop, M.; Awang, Z.

2018-05-01

Barium Strontium Titanate (Ba0.5Sr0.5TiO3) is known to have a high dielectric constant and low loss at microwave frequencies. These unique features are useful for many electronic applications. This paper focuses on material characterization of BST thin films deposited on sapphire substrate by RF magnetron sputtering system. The sample was then annealed at 900 °C for two hours. Several methods were used to characterize the structural properties of the material such as X-ray diffraction (XRD) and atomic force microscopy (AFM). Field emission scanning electron microscopy (FESEM) was used to analyze the surface morphology of the thin film. From the results obtained, it can be shown that the annealed sample had a rougher surface and better crystallinity as compared to as-deposited sample.

Room Temperature Thin Film Ba(x)Sr(1-x)TiO3 Ku-Band Coupled MicrostripPhase Shifters: Effects of Film Thickness, Doping, Annealing and Substrate Choice

NASA Technical Reports Server (NTRS)

VanKeuls, F. W.; Mueller, C. H.; Miranda, F. A.; Romanofsky, R. R.; Canedy, C. L.; Aggarwal, S.; Venkatesan, T.; Ramesh, R.; Horwitz, S.; Chang, W.

1999-01-01

We report on measurements taken on over twenty Ku-band coupled microstrip phase shifters (CMPS) using thin ferroelectric films of Ba(x)Sr(1-x)TiO3. This CMPS design is a recent innovation designed to take advantage of the high tunability and tolerate the high dielectric constant of ferroelectric films at Ku- and K-band frequencies. These devices are envisioned as a component in low-cost steerable beam phased area antennas, Comparisons are made between devices with differing film thickness, annealed vs unannealed, Mn-doped vs. undoped, and also substrates of LaAlO3 and MgO. A comparison between the CMPS structure and a CPW phase shifter was also made oil the same ferroelectric film.

Epitaxial growth of (111)-oriented BaTiO3/SrTiO3 perovskite superlattices on Pt(111)/Ti/Al2O3(0001) substrates

NASA Astrophysics Data System (ADS)

Panomsuwan, Gasidit; Takai, Osamu; Saito, Nagahiro

2013-09-01

Symmetric BaTiO3/SrTiO3 (BTO/STO) superlattices (SLs) were epitaxially grown on Pt(111)/Ti/Al2O3(0001) substrates with various modulation periods (Λ = 4.8 - 48 nm) using double ion beam sputter deposition. The BTO/STO SLs exhibit high (111) orientation with two in-plane orientation variants related by a 180° rotation along the [111]Pt axis. The BTO layer is under an in-plane compressive state, whereas the STO layer is under an in-plane tensile state due to the effect of lattice mismatch. A remarkable enhancement of dielectric constant is observed for the SL with relatively small modulation period, which is attributed to both the interlayer biaxial strain effect and the Maxwell-Wagner effect.

Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

NASA Technical Reports Server (NTRS)

Warner, J. D.; Bhasin, K. B.; Varaljay, N. C.; Bohman, D. Y.; Chorey, C. M.

1989-01-01

A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

Indium selenide monolayer: strain-enhanced optoelectronic response and dielectric environment-tunable 2D exciton features

NASA Astrophysics Data System (ADS)

Ben Amara, Imen; Hichri, Aida; Jaziri, Sihem

2017-12-01

Electronic and optical performances of the β-InSe monolayer (ML) are considerably boosted by tuning the corresponding band energies through lattice in-plane compressive strain engineering. First principles calculations show an indirect-direct gap transition with a large bandgap size. The crossover is due to different responses of the near-gap state energies with respect to strain. This is explained by the variation of In-Se bond length, the bond nature of near-band-edge electronic orbital and of the momentum angular contribution versus in-plane compressive strain. The effective masses of charge carriers are also found to be highly modulated and significantly light at the indirect-direct-gap transition. The tuned optical response of the resulting direct-gap ML β-InSe is evaluated versus applied energy to infer the allowed optical transitions, dielectric constants, semiconductor-metal behavior and refractive index. The environmental dielectric engineering of exciton behavior of the resulting direct-gap ML β-InSe is handled within the effective mass Wannier-Mott model and is expected to be important. Our results highlight the increase of binding energy and red-shifted exciton energy with decreasing screening substrates, resulting in a stable exciton at room temperature. The intensity and energy of the ground-state exciton emission are expected to be strongly influenced under substrate screening effect. According to our findings, the direct-gap ML β-InSe assures tremendous 2D optoelectronic and nanoelectronic merits that could overcome several limitations of unstrained ML β-InSe.

Electrical conduction mechanism and dielectric characterization of MnTPPCl thin films

NASA Astrophysics Data System (ADS)

Meikhail, M. S.; Oraby, A. H.; El-Nahass, M. M.; Zeyada, H. M.; Al-Muntaser, A. A.

2018-06-01

The AC conductivity and dielectric properties of MnTPPCl sandwich structure as Au/MnTPPCl/Au were studied. The conductivity of the MnTPPCl thin films have been interpreted by the correlated barrier hopping (CBH) model. The dominant conduction process have found to be the single polaron hopping conduction. The values of the hopping distance, Rω, barrier height, W, and the localized-state density, N, are estimated at different frequencies. The behavior of dielectric constant and dielectric loss was discussed as a function of temperature and frequency. The dielectric constant was described in terms of polarization mechanism in materials. The spectral behavior of dielectric loss is interpreted on the basis of the Giuntini et al. model [1]. The value of WM is obtained as 0.32 eV. A non-Debye relaxation phenomenon was observed from the dielectric relaxation mechanism.

Split of surface plasmon resonance of gold nanoparticles on silicon substrate: a study of dielectric functions.

PubMed

Zhu, S; Chen, T P; Cen, Z H; Goh, E S M; Yu, S F; Liu, Y C; Liu, Y

2010-10-11

The split of surface plasmon resonance of self-assembled gold nanoparticles on Si substrate is observed from the dielectric functions of the nanoparticles. The split plasmon resonances are modeled with two Lorentz oscillators: one oscillator at ~1 eV models the polarization parallel to the substrate while the other at ~2 eV represents the polarization perpendicular to the substrate. Both parallel and perpendicular resonances are red-shifted when the nanoparticle size increases. The red shifts in both resonances are explained by the image charge effect of the Si substrate.

Synthesis of Derivatives of Alpha, Omega Difunctional Perfluoroaliphatic Compounds for Low Dielectric Constant Resins

DTIC Science & Technology

1992-03-06

coupling reactions of perfluoroalkyl iodides with certain aryl iodides have been studied. Simple trial tests were carried out between perfluorooctyl iodide...omega Difunctional Perfluoroaliphatic Compounds for Low Dielectric Constant Resins by Robert L. Soulen Department of Chemistry Southwestern University...Difunctional Perfluoroaliphatic Compounds for Low Dielectric Resins 12 PERSONAL AUTHOR(S) Robert L. Soulen 1Ja TYPE OF REPORT 73b TIME COVERED FI DATE OF

Application of the compensated Arrhenius formalism to self-diffusion: implications for ionic conductivity and dielectric relaxation.

PubMed

Petrowsky, Matt; Frech, Roger

2010-07-08

Self-diffusion coefficients are measured from -5 to 80 degrees C in a series of linear alcohols using pulsed field gradient NMR. The temperature dependence of these data is studied using a compensated Arrhenius formalism that assumes an Arrhenius-like expression for the diffusion coefficient; however, this expression includes a dielectric constant dependence in the exponential prefactor. Scaling temperature-dependent diffusion coefficients to isothermal diffusion coefficients so that the exponential prefactors cancel results in calculated energies of activation E(a). The exponential prefactor is determined by dividing the temperature-dependent diffusion coefficients by the Boltzmann term exp(-E(a)/RT). Plotting the prefactors versus the dielectric constant places the data on a single master curve. This procedure is identical to that previously used to study the temperature dependence of ionic conductivities and dielectric relaxation rate constants. The energies of activation determined from self-diffusion coefficients in the series of alcohols are strikingly similar to those calculated for the same series of alcohols from both dielectric relaxation rate constants and ionic conductivities of dilute electrolytes. The experimental results are described in terms of an activated transport mechanism that is mediated by relaxation of the solution molecules. This microscopic picture of transport is postulated to be common to diffusion, dielectric relaxation, and ionic transport.

Dielectric constants of soils at microwave frequencies-2

NASA Technical Reports Server (NTRS)

Wang, J.; Schmugge, T.; Williams, D.

1978-01-01

The dielectric constants of several soil samples were measured at frequencies of 5 and 19 GHz using the infinite transmission line method. The results of these measurements are presented and discussed with respect to soil types and texture structures. A comparison is made with other measurements at 1.4 GHz. At all three frequencies, the dependence of dielectric constant on soil moisture can be approximated by two straight lines. At low moisture, the slope is less than at high moisture level. The intersection of the two lines is believed to be a function of soil texture.

Role of dielectric constant in electrohydrodynamics of conducting fluids

NASA Technical Reports Server (NTRS)

Rhodes, Percy H.; Snyder, Robert S.; Roberts, Glyn O.

1994-01-01

Electrohydrodynamic sample distortion during continuous flow electrophoresis is an experiment to be conducted during the second International Microgravity Laboratory (IML-2) in July 1994. The specific objective of this experiment is the distortion caused by the difference in dielectric constant between the sample and surrounding buffer. Although the role of sample conductivity in electrohydrodynamic has been the subject of both flight and ground experiments, the separate role of dielectric constant, independent of sample conductivity, has not been measured. This paper describes some of the laboratory research and model development that will support the flight experiment on IML-2.

Remote Sensing of Salinity: The Dielectric Constant of Sea Water

NASA Technical Reports Server (NTRS)

LeVine, David M.; Lang, R.; Utku, C.; Tarkocin, Y.

2011-01-01

Global monitoring of sea surface salinity from space requires an accurate model for the dielectric constant of sea water as a function of salinity and temperature to characterize the emissivity of the surface. Measurements are being made at 1.413 GHz, the center frequency of the Aquarius radiometers, using a resonant cavity and the perturbation method. The cavity is operated in a transmission mode and immersed in a liquid bath to control temperature. Multiple measurements are made at each temperature and salinity. Error budgets indicate a relative accuracy for both real and imaginary parts of the dielectric constant of about 1%.

Microclimate, Water Potential, Transpiration, and Bole Dielectric Constant of Coniferous and Deciduous Tree Species in the Continental Boreal Ecotone of Central Alaska

NASA Technical Reports Server (NTRS)

Zimmermann, R.; McDonald, K.; Way, J.; Oren, R.

1994-01-01

Tree canopy microclimate, xylem water flux and xylem dielectric constant have been monitored in situ since June 1993 in two adjacent natural forest stands in central Alaska. The deciduous stand represents a mature balsam poplar site on the Tanana River floodplain, while the coniferous stand consists of mature white spruce with some black spruce mixed in. During solstice in June and later in summer, diurnal changes of xylem water potential were measured to investigate the occurrence and magnitude of tree transpiration and dielectric constant changes in stems.

Solid electrolytes

DOEpatents

Abraham, Kuzhikalail M.; Alamgir, Mohamed

1993-06-15

This invention pertains to Li ion (Li.sup.+) conductive solid polymer electrolytes composed of solvates of Li salts immobilized (encapsulated) in a solid organic polymer matrix. In particular, this invention relates to solid polymer electrolytes derived by immobilizing complexes (solvates) formed between a Li salt such as LiAsF.sub.6, LiCF.sub.3 SO.sub.3 or LiClO.sub.4 and a mixture of aprotic organic solvents having high dielectric constants such as ethylene carbonate (EC) (dielectric constant=89.6) and propylene carbonate (PC) (dielectric constant=64.4) in a polymer matrix such as polyacrylonitrile, poly(tetraethylene glycol diacrylate), or poly(vinyl pyrrolidinone).

Solid State Ultracapacitor

NASA Technical Reports Server (NTRS)

Hill, Curtis W. (Inventor); Rolin, Terry D. (Inventor)

2018-01-01

An ink of the formula: 60-80% by weight BaTiO3 particles coated with SiO2; 5-50% by weight high dielectric constant glass; 0.1-5% by weight surfactant; 5-25% by weight solvent; and 5-25% weight organic vehicle. Also a method of manufacturing a capacitor comprising the steps of: heating particles of BaTiO3 for a special heating cycle, under a mixture of 70-96% by volume N2 and 4-30% by volume H2 gas; depositing a film of SiO2 over the particles; mechanically separating the particles; incorporating them into the above described ink formulation; depositing the ink on a substrate; and heating at 850-900 C for less than 5 minutes and allowing the ink and substrate to cool to ambient in N2 atmosphere. Also a dielectric made by: heating particles of BaTiO3 for a special heating cycle, under a mixture of 70-96% by volume N2 and 4-30% by volume H2 gas; depositing a film of SiO2 over the particles; mechanically separating the particles; forming them into a layer; and heating at 850-900 C for less than 5 minutes and allowing the layer to cool to ambient in N2 atmosphere.

Preparation and Characterization of PbO-SrO-Na2O-Nb2O5-SiO2 Glass Ceramics Thin Film for High-Energy Storage Application

NASA Astrophysics Data System (ADS)

Tan, Feihu; Zhang, Qingmeng; Zhao, Hongbin; Wei, Feng; Du, Jun

2018-03-01

PbO-SrO-Na2O-Nb2O5-SiO2 (PSNNS) glass ceramic thin films were prepared by pulsed laser deposition technology on heavily doped silicon substrates. The influence of annealing temperatures on microstructures, dielectric properties and energy storage performances of the as-prepared films were investigated in detail. X-ray diffraction studies indicate that Pb2Nb2O7 crystallizes at 800°C and disappears at 900°C, while NaNbO3 and PbNb2O6 are formed at the higher temperature of 900°C. The dielectric properties of the glass ceramics thin films have a strong dependence on the phase assemblages that are developed during heat treatment. The maximum dielectric constant value of 171 was obtained for the film annealed at 800°C, owing to the high electric breakdown field strength, The energy storage densities of the PSNNS films annealed at 800°C were as large as 36.9 J/cm3, These results suggest that PSNNS thin films are promising for energy storage applications.

Tuning the growth and strain relaxation of ferroelectric BaTiO3 thin films on SrRuO3 electrode: influence on electrical properties

NASA Astrophysics Data System (ADS)

Aidoud, Amina; Maroutian, Thomas; Matzen, Sylvia; Agnus, Guillaume; Amrani, Bouhalouane; Driss-Khodja, Kouider; Aubert, Pascal; Lecoeur, Philippe

2018-01-01

This study is focused on the link between the structural and electric properties of BaTiO3 thin films grown on SrRuO3-buffered (001) SrTiO3 substrates, SrRuO3 acting as bottom electrode. The growth regime and film structure are here tuned through the growth pressure for pulsed laser deposition in the 1-200 mTorr range. The dielectric, ferroelectric and leakage current properties are systematically measured for the different strain states of the BaTiO3 thin films on SrRuO3. The results are discussed with the help of ab initio calculations on the effects of Ba- and Ti-vacancies on BaTiO3 lattice parameters. A sharp increase of the dielectric constant is evidenced in the high pressure region, where the tetragonality of the BaTiO3 is decreasing rapidly with growth pressure. We interpret this divergence of the dielectric function as the signature of the vicinity of the phase boundary between the out-of-plane and in-plane orientations of the tetragonal BTO films.

Vacuum ultra-violet damage and damage mitigation for plasma processing of highly porous organosilicate glass dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marneffe, J.-F. de, E-mail: marneffe@imec.be; Lukaszewicz, M.; Porter, S. B.

2015-10-07

Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong methyl bond depletion was observed, concomitant with a significant increase of the bulk dielectric constant. This indicates that, besides reactive radical diffusion, photons emitted during plasma processing do impede dielectric properties and therefore need to be tackled appropriately during patterning and integration. The detrimental effect of VUV irradiation can be partly suppressed by stuffing the low-k porous matrix with proper sacrificial polymers showing high VUV absorption together with good thermal and VUV stability. In addition,more » the choice of an appropriate hard-mask, showing high VUV absorption, can minimize VUV damage. Particular processing conditions allow to minimize the fluence of photons to the substrate and lead to negligible VUV damage. For patterned structures, in order to reduce VUV damage in the bulk and on feature sidewalls, the combination of both pore stuffing/material densification and absorbing hard-mask is recommended, and/or the use of low VUV-emitting plasma discharge.« less

Solvent Dependence of Double Proton Transfer in the Formic Acid-Formamidine Complex: Path Integral Molecular Dynamics Investigation.

PubMed

Kungwan, Nawee; Ngaojampa, Chanisorn; Ogata, Yudai; Kawatsu, Tsutomu; Oba, Yuki; Kawashima, Yukio; Tachikawa, Masanori

2017-10-05

Solvent dependence of double proton transfer in the formic acid-formamidine (FA-FN) complex at room temperature was investigated by means of ab initio path integral molecular dynamics (AIPIMD) simulation with taking nuclear quantum and thermal effects into account. The conductor-like screening model (COSMO) was applied for solvent effect. In comparison with gas phase, double proton delocalization between two heavy atoms (O and N) in FA-FN were observed with reduced proton transfer barrier height in low dielectric constant medium (<4.8). For dielectric constant medium at 4.8, the chance of finding these two protons are more pronounced due to the solvent effect which completely washes out the proton transfer barrier. In the case of higher dielectric constant medium (>4.8), the ionic species becomes more stable than the neutral ones and the formate anion and formamidium cation are thermodynamically stable. For ab initio molecular dynamics simulation, in low dielectric constant medium (<4.8) a reduction of proton transfer barrier with solvent effect is found to be less pronounced than the AIPIMD due to the absence of nuclear quantum effect. Moreover, the motions of FA-FN complex are significantly different with increasing dielectric constant medium. Such a difference is revealed in detail by the principal component analysis.

Non-polarizable force field of water based on the dielectric constant: TIP4P/ε.

PubMed

Fuentes-Azcatl, Raúl; Alejandre, José

2014-02-06

The static dielectric constant at room temperature and the temperature of maximum density are used as target properties to develop, by molecular dynamics simulations, the TIP4P/ε force field of water. The TIP4P parameters are used as a starting point. The key step, to determine simultaneously both properties, is to perform simulations at 240 K where a molecular dipole moment of minimum density is found. The minimum is shifted to larger values of μ as the distance between the oxygen atom and site M, lOM, decreases. First, the parameters that define the dipole moment are adjusted to reproduce the experimental dielectric constant and then the Lennard-Jones parameters are varied to match the temperature of maximum density. The minimum on density at 240 K allows understanding why reported TIP4P models fail to reproduce the temperature of maximum density, the dielectric constant, or both properties. The new model reproduces some of the thermodynamic and transport anomalies of water. Additionally, the dielectric constant, thermodynamics, and dynamical and structural properties at different temperatures and pressures are in excellent agreement with experimental data. The computational cost of the new model is the same as that of the TIP4P.

Analysis of the Suspended H-Waveguide and Other Related Dielectric Waveguide Structures.

DTIC Science & Technology

1983-01-01

energy is concentrated in the disc. In the substrate regions, the fields decay extremely fast. Consequently, the removal of the dielectric substrates...ado re erse ide i f ne oeeary e d IdO tif’ I V Week 110m mke ) 0 In this thesis, the field and propagation characceristicshof’many dielectric waveguide...propagation co*stants and the field distribu- tions of a newly developed suspended H-woveguide based on the mode matching techniques is described. The d

Non-trivial behavior of the low temperature maximum of dielectric constant and location of the end critical point in Na0.5Bi0.5TiO3-0.06BaTiO3 lead free relaxor ferroelectrics crystals detected by acoustic emission

NASA Astrophysics Data System (ADS)

Dul'kin, Evgeniy; Tiagunova, Jenia; Mojaev, Evgeny; Roth, Michael

2018-01-01

[001] lead free relaxor ferroelectrics crystals of Na0.5Bi0.5TiO3-0.06BaTiO3 were studied by means of dielectric and acoustic emission methods in the temperature range of 25-240 °C and under a dc bias electric field up to 0.4 kV/cm. A temperature maximum of the dielectric constant was found near 170 °C, as well as the acoustic emission bursts pointed out to both the depolarization temperature near 120 °C and the temperature, corresponding to the maximum of dielectric constant, near 170 °C. While the depolarization temperature increased linearly, the temperature of the dielectric constant maximum was shown to exhibit a V-shape behavior under an electric field: it initially decreases, reaches a sharp minimum at some small threshold electric field of 0.15 kV/cm, and then starts to increase similar to the Curie temperature of the normal ferroelectrics, as the field enhances. Acoustic emission bursts, accompanying the depolarization temperature, weakened with the enhancing field, whereas the ones accompanying the temperature of the dielectric constant maximum exhibited two maxima: near 0.1 kV/cm and near 0.3 kV/cm. The meaning of these two acoustic emission maxima is discussed.

Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: A comparative study

NASA Astrophysics Data System (ADS)

Grill, A.; Patel, V.; Rodbell, K. P.; Huang, E.; Baklanov, M. R.; Mogilnikov, K. P.; Toney, M.; Kim, H.-C.

2003-09-01

The low dielectric constant (k) of plasma enhanced chemical vapor deposited SiCOH films has been attributed to porosity in the films. We have shown previously that the dielectric constant of such materials can be extended from the typical k values of 2.7-2.9 to ultralow-k values of k=2.0. The reduction in the dielectric constants has been achieved by enhancing the porosity in the films through the addition of an organic material to the SiCOH precursor and annealing the films to remove the thermally less-stable organic fractions. In order to confirm the relation between dielectric constant and film porosity the latter has been evaluated for SiCOH films with k values from 2.8 to 2.05 using positron annihilation spectroscopy, positron annihilation lifetime spectroscopy, small angle x-ray scattering, specular x-ray reflectivity, and ellipsometric porosimetry measurements. It has been found that the SiCOH films with k=2.8 had no detectable porosity, however the porosity increased with decreasing dielectric constant reaching values of 28%-39% for k values of 2.05. The degree of porosity and the pore size determined by the dissimilar techniques agreed within reasonable limits, especially when one takes into account the small pore size in these films and the different assumptions used by the different techniques. The pore size increases with decreasing k, however the diameter remains below 5 nm for k=2.05, most of the pores being smaller than 2.5 nm.

Thin film colossal dielectric constant oxide La2-xSrxNiO4: Synthesis, dielectric relaxation measurements, and electrode effects

NASA Astrophysics Data System (ADS)

Podpirka, Adrian; Ramanathan, Shriram

2011-01-01

We have successfully synthesized the colossal dielectric constant oxide La2-xSrxNiO4 in thin film form by reactive cosputtering from metallic targets and careful annealing protocols. Composition and phase purity was determined through energy dispersive spectra and x-ray diffraction, respectively. The dielectric constant exceeds values of over 20 000 up to 1 kHz and the activation energy for the frequency-independent conductivity plateau was extracted to be approximately 155 meV from 300 to 473 K, both in agreement with measurements conducted on bulk single crystals. However, unlike in single crystals, we observe early onset of relaxation in thin films indicating the crucial role of grain boundaries in influencing the dielectric response. ac conductivity at varying temperatures is analyzed within the framework of the universal dielectric law leading to an exponent of approximately 0.3, dependent on the electrode material. Impedance spectroscopy with electrodes of different work function (Pt, Pd, and Ag) was further carried out as a function of temperature and applied bias to provide mechanistic insights into the nature of the dielectric response.

Effects of synthesis techniques on chemical composition, microstructure and dielectric properties of Mg-doped calcium titanate

NASA Astrophysics Data System (ADS)

Jongprateep, Oratai; Sato, Nicha

2018-04-01

Calcium titanate (CaTiO3) has been recognized as a material for fabrication of dielectric components, owing to its moderate dielectric constant and excellent microwave response. Enhancement of dielectric properties of the material can be achieved through doping, compositional and microstructural control. This study, therefore, aimed at investigating effects of powder synthesis techniques on compositions, microstructure, and dielectric properties of Mg-doped CaTiO3. Solution combustion and solid-state reaction were powder synthesis techniques employed in preparation of undoped CaTiO3 and CaTiO3 doped with 5-20 at% Mg. Compositional analysis revealed that powder synthesis techniques did not exhibit a significant effect on formation of secondary phases. When Mg concentration did not exceed 5 at%, the powders prepared by both techniques contained only a single phase. An increase of MgO secondary phase was observed as Mg concentrations increased from 10 to 20 at%. Experimental results, on the contrary, revealed that powder synthesis techniques contributed to significant differences in microstructure. Solution combustion technique produced powders with finer particle sizes, which consequently led to finer grain sizes and density enhancement. High-density specimens with fine microstructure generally exhibit improved dielectric properties. Dielectric measurements revealed that dielectric constants of all samples ranged between 231 and 327 at 1 MHz, and that superior dielectric constants were observed in samples prepared by the solution combustion technique.

High-k 3D-barium titanate foam/phenolphthalein poly(ether sulfone)/cyanate ester composites with frequency-stable dielectric properties and extremely low dielectric loss under reduced concentration of ceramics

NASA Astrophysics Data System (ADS)

Zheng, Longhui; Yuan, Li; Guan, Qingbao; Liang, Guozheng; Gu, Aijuan

2018-01-01

Higher dielectric constant, lower dielectric loss and better frequency stability have been the developing trends for high dielectric constant (high-k) materials. Herein, new composites have been developed through building unique structure by using hyperbranched polysiloxane modified 3D-barium titanate foam (BTF) (BTF@HSi) as the functional fillers and phenolphthalein poly(ether sulfone) (cPES)/cyanate ester (CE) blend as the resin matrix. For BTF@HSi/cPES/CE composite with 34.1 vol% BTF, its dielectric constant at 100 Hz is as high as 162 and dielectric loss is only 0.007; moreover, the dielectric properties of BTF@HSi/cPES/CE composites exhibit excellent frequency stability. To reveal the mechanism behind these attractive performances of BTF@HSi/cPES/CE composites, three kinds of composites (BTF/CE, BTF/cPES/CE, BTF@HSi/CE) were prepared, their structure and integrated performances were intensively investigated and compared with those of BTF@HSi/cPES/CE composites. Results show that the surface modification of BTF is good for preparing composites with improved thermal stability; while introducing flexible cPES to CE is beneficial to fabricate composites with good quality through effectively blocking cracks caused by the stress concentration, and then endowing the composites with good dielectric properties at reduced concentration of ceramics.

Model dielectric function for 2D semiconductors including substrate screening

NASA Astrophysics Data System (ADS)

Trolle, Mads L.; Pedersen, Thomas G.; Véniard, Valerie

2017-01-01

Dielectric screening of excitons in 2D semiconductors is known to be a highly non-local effect, which in reciprocal space translates to a strong dependence on momentum transfer q. We present an analytical model dielectric function, including the full non-linear q-dependency, which may be used as an alternative to more numerically taxing ab initio screening functions. By verifying the good agreement between excitonic optical properties calculated using our model dielectric function, and those derived from ab initio methods, we demonstrate the versatility of this approach. Our test systems include: Monolayer hBN, monolayer MoS2, and the surface exciton of a 2 × 1 reconstructed Si(111) surface. Additionally, using our model, we easily take substrate screening effects into account. Hence, we include also a systematic study of the effects of substrate media on the excitonic optical properties of MoS2 and hBN.

Cavity resonator for dielectric measurements of high-ɛ, low loss materials, demonstrated with barium strontium zirconium titanate ceramics

NASA Astrophysics Data System (ADS)

Marksteiner, Quinn R.; Treiman, Michael B.; Chen, Ching-Fong; Haynes, William B.; Reiten, M. T.; Dalmas, Dale; Pulliam, Elias

2017-06-01

A resonant cavity method is presented which can measure loss tangents and dielectric constants for materials with dielectric constant from 150 to 10 000 and above. This practical and accurate technique is demonstrated by measuring barium strontium zirconium titanate bulk ferroelectric ceramic blocks. Above the Curie temperature, in the paraelectric state, barium strontium zirconium titanate has a sufficiently low loss that a series of resonant modes are supported in the cavity. At each mode frequency, the dielectric constant and loss tangent are obtained. The results are consistent with low frequency measurements and computer simulations. A quick method of analyzing the raw data using the 2D static electromagnetic modeling code SuperFish and an estimate of uncertainties are presented.

Dielectric response of Anderson and pseudogapped insulators

NASA Astrophysics Data System (ADS)

Feigel’man, M. V.; Ivanov, D. A.; Cuevas, E.

2018-05-01

Using a combination of analytic and numerical methods, we study the polarizability of a (non-interacting) Anderson insulator in one-, two-, and three-dimensions and demonstrate that, in a wide range of parameters, it scales proportionally to the square of the localization length, contrary to earlier claims based on the effective-medium approximation. We further analyze the effect of electron–electron interactions on the dielectric constant in quasi-1D, quasi-2D and 3D materials with large localization length, including both Coulomb repulsion and phonon-mediated attraction. The phonon-mediated attraction (in the pseudogapped state on the insulating side of the superconductor-insulator transition) produces a correction to the dielectric constant, which may be detected from a linear response of a dielectric constant to an external magnetic field.

Long range wetting transparency on top of layered metal dielectric substrates

DTIC Science & Technology

2015-11-20

multi-layered stacks were deposited onto glass substrates ( silica -based Micro cover glass , 22mmx22mm from VWR (48366-067), index of refraction n...necessarily endorsed by the United States Government. Long-range wetting transparency on top of layered metal-dielectric substrates M. A...as far as ~100 nm beneath the water/MgF2 interface. We refer to this phenomenon as long range wetting transparency . The latter effect cannot be

The effect of PECVD plasma decomposition on the wettability and dielectric constant changes in silicon modified DLC films for potential MEMS and low stiction applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ogwu, A. A.; Okpalugo, T. I. T.; Nanotechnology Institute, School of Electrical and Mechanical Engineering, University of Ulster, Northern Ireland

We have carried out investigations aimed at understanding the mechanism responsible for a water contact angle increase of up to ten degrees and a decrease in dielectric constant in silicon modified hydrogenated amorphous carbon films compared to unmodified hydrogenated amorphous carbon films. Our investigations based on surface chemical constituent analysis using Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), SIMS, FTIR, contact angle / surface energy measurements and spectroscopic ellipsometry suggests the presence of hydrophobic chemical entities on the surface of the films. This observation is consistent with earlier theoretical plasma chemistry predictions and observed Raman peak shifts in the films. Thesemore » surface hydrophobic entities also have a lower polarizability than the bonds in the un-modified films thereby reducing the dielectric constant of the silicon modified films measured by spectroscopic ellipsometry. Ellipsometric dielectric constant measurement is directly related to the surface energy through Hamaker's constant. Our current finding is expected to be of benefit to understanding stiction, friction and lubrication in areas that range from nano-tribology to microfluidics.« less

The effect of PECVD plasma decomposition on the wettability and dielectric constant changes in silicon modified DLC films for potential MEMS and low stiction applications

NASA Astrophysics Data System (ADS)

Ogwu, A. A.; Okpalugo, T. I. T.; McLaughlin, J. A. D.

2012-09-01

We have carried out investigations aimed at understanding the mechanism responsible for a water contact angle increase of up to ten degrees and a decrease in dielectric constant in silicon modified hydrogenated amorphous carbon films compared to unmodified hydrogenated amorphous carbon films. Our investigations based on surface chemical constituent analysis using Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), SIMS, FTIR, contact angle / surface energy measurements and spectroscopic ellipsometry suggests the presence of hydrophobic chemical entities on the surface of the films. This observation is consistent with earlier theoretical plasma chemistry predictions and observed Raman peak shifts in the films. These surface hydrophobic entities also have a lower polarizability than the bonds in the un-modified films thereby reducing the dielectric constant of the silicon modified films measured by spectroscopic ellipsometry. Ellipsometric dielectric constant measurement is directly related to the surface energy through Hamaker's constant. Our current finding is expected to be of benefit to understanding stiction, friction and lubrication in areas that range from nano-tribology to microfluidics.

Effect of soil texture on the microwave emission from soils

NASA Technical Reports Server (NTRS)

Schmugge, T. J.

1980-01-01

The intensity brightness temperature of the microwave emission from the soil is determined primarily by its dielectric properties. The large difference between the dielectric constant of water and that of dry soil produces a strong dependence of the soil's dielectric constant on its moisture content. This dependence is effected by the texture of the soil because the water molecules close to the particle surface are tightly bound and do not contribute significantly to the dielectric properties. Since this surface area is a function of the particle size distribution (soil texture), being larger for clay soils with small particles, and smaller for sandy soils with larger particles; the dielectric properties will depend on soil texture. Laboratory measurements of the dielectric constant for soils are summarized. The dependence of the microwave emission on texture is demonstrated by measurements of brightness temperature from an aircraft platform for a wide range of soil textures. It is concluded that the effect of soil texture differences on the observed values can be normalized by expressing the soil moisture values as a percent field capacity for the soil.

Study of PECVD films containing flourine and carbon and diamond like carbon films for ultra low dielectric constant interlayer dielectric applications

NASA Astrophysics Data System (ADS)

Sundaram, Nandini Ganapathy

Lowering the capacitance of Back-end-of-line (BEOL) structures by decreasing the dielectric permittivity of the interlayer dielectric material in integrated circuits (ICs) lowers device delay times, power consumption and parasitic capacitance. a:C-F films that are thermally stable at 400°C were deposited using tetrafluorocarbon and disilane (5% by volume in Helium) as precursors. The bulk dielectric constant (k) of the film was optimized from 2.0 / 2.2 to 1.8 / 1.91 as-deposited and after heat treatment. Films, with highly promising k-values but discarded for failing to meet shrinkage rate requirements were salvaged by utilizing a novel extended heat treatment scheme. Film properties including chemical bond structure, F/C ratio, refractive index, surface planarity, contact angle, dielectric constant, flatband voltage shift, breakdown field potential and optical energy gap were evaluated by varying process pressure, power, substrate temperature and flow rate ratio (FRR) of processing gases. Both XPS and FTIR results confirmed that the stoichiometry of the ultra-low k (ULK) film is close to that of CF2 with no oxygen. C-V characteristics indicated the presence of negative charges that are either interface trapped charges or bulk charges. Average breakdown field strength was in the range of 2-8 MV/cm while optical energy gap varied between 2.2 eV and 3.4 eV. Irradiation or plasma damage significantly impacts the ability to integrate the film in VSLI circuits. The film was evaluated after exposure to oxygen plasma and HMDS vapors and no change in the FTIR spectra or refractive index was observed. Film is resistant to attack by developers CD 26 and KOH. While the film dissolves in UVN-30 negative resist, it is impermeable to PGDMA. A 12% increase in dielectric constant and a decrease in contact angle from 65° to 47° was observed post e-beam exposure. The modified Gaseous Electronics Conference (mGEC) reference cell was used to deposit DLC films using CH4 and Argon as precursors. Pre and post-anneal structural properties of the deposited thin film were studied using laser excitation of 633 nm in a Jobin Yvon Labram high-resolution micro-Raman spectrometer. The film was further characterized using AFM, FTIR, XRD, goniometry and electrical testing. Average film roughness as measured by AFM was less than 1 nm, the k-value was 2.5, and the contact angle with water was 42°. Lastly, layered dielectric films comprising of Diamond like Carbon (DLC) and Amorphous Fluorocarbon (a:C-F) were generated using three different stack configurations and subsequently evaluated. Seven unique process conditions generated promising stacks with k-values between 1.69 and 1.95. Of these, only one film exhibited very low shrinkage rates acceptable for semiconductor device processing. Annealed a:C-F films with DLC top coat are similar in bonding structure to as deposited FC films proving that DLC deposition significantly modified the bonding structure of the underlying annealed a:C-F film. Stacks comprised of a:C-F films with higher oxygen content, deposited using high FRRs exhibited both macro and microbuckling to a larger degree and extent. Film integrity was preserved by annealing the Fluorocarbon component or by providing a DLC base coat.

New dielectric elastomers with improved properties for energy harvesting and actuation

NASA Astrophysics Data System (ADS)

Stiubianu, George; Bele, Adrian; Tugui, Codrin; Musteata, Valentina

2015-02-01

New materials with large value for dielectric constant were obtained by using siloxane and chemically modified lignin. The modified lignin does not act as a stiffening filler material for the siloxane but acts as bulk filler, preserving the softness and low value of Young's modulus specific for silicones. The measured values for dielectric constant compare positively with the ones for previously tested dielectric elastomers based on siloxane rubber or acrylic rubber loaded with ceramic nanoparticles. The new materials use the well-known silicone chemistry and lignin which is available worldwide in large amounts as a by-product of pulp and paper industry, making its manufacturing affordable. The prepared dielectric elastomers were tested for possible applications for wave, wind and kinetic body motion energy harvesting. Siloxane, lignin, dielectric

Electrical and band structural analyses of Ti1-x Al x O y films grown by atomic layer deposition on p-type GaAs

NASA Astrophysics Data System (ADS)

An, Youngseo; Mahata, Chandreswar; Lee, Changmin; Choi, Sungho; Byun, Young-Chul; Kang, Yu-Seon; Lee, Taeyoon; Kim, Jiyoung; Cho, Mann-Ho; Kim, Hyoungsub

2015-10-01

Amorphous Ti1-x Al x O y films in the Ti-oxide-rich regime (x  <  0.5) were deposited on p-type GaAs via atomic layer deposition with titanium isopropoxide, trimethylaluminum, and H2O precursor chemistry. The electrical properties and energy band alignments were examined for the resulting materials with their underlying substrates, and significant frequency dispersion was observed in the accumulation region of the Ti-oxide-rich Ti1-x Al x O y films. Although a further reduction in the frequency dispersion and leakage current (under gate electron injection) could be somewhat achieved through a greater addition of Al-oxide in the Ti1-x Al x O y film, the simultaneous decrease in the dielectric constant proved problematic in finding an optimal composition for application as a gate dielectric on GaAs. The spectroscopic band alignment measurements of the Ti-oxide-rich Ti1-x Al x O y films indicated that the band gaps had a rather slow increase with the addition of Al-oxide, which was primarily compensated for by an increase in the valance band offset, while a nearly-constant conduction band offset with a negative electron barrier height was maintained.

Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10- nanosheet seed layer.

PubMed

Kimura, Junichi; Takuwa, Itaru; Matsushima, Masaaki; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Shiraishi, Takahisa; Konno, Toyohiko J; Shibata, Tatsuo; Osada, Minoru; Sasaki, Takayoshi; Funakubo, Hiroshi

2016-02-15

To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4Ti4O15 films with various film thicknesses were prepared on (100)cSrRuO3/Ca2Nb3O10(-) nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (εr) at room temperature exhibits a negligible degradation as the film thickness decreases to 50 nm, suggesting that εr of (001)-oriented CaBi4Ti4O15 is less sensitive to the residual strain. The capacitance density increases monotonously with decreasing film thickness, reaching a value of 4.5 μF/cm(2) for a 50-nm-thick nanofilm, and is stable against temperature changes from room temperature to 400 °C irrespective of film thickness. This behaviour differs from that of the widely investigated perovskite-structured dielectrics. These results show that (001)-oriented CaBi4Ti4O15 films derived using Ca2Nb3O10(-) nanosheets as seed layers can be made candidates for high-temperature capacitor applications by a small change in the dielectric properties against film thickness and temperature variations.

Microwave measurement and modeling of the dielectric properties of vegetation

NASA Astrophysics Data System (ADS)

Shrestha, Bijay Lal

Some of the important applications of microwaves in the industrial, scientific and medical sectors include processing and treatment of various materials, and determining their physical properties. The dielectric properties of the materials of interest are paramount irrespective of the applications, hence, a wide range of materials covering food products, building materials, ores and fuels, and biological materials have been investigated for their dielectric properties. However, very few studies have been conducted towards the measurement of dielectric properties of green vegetations, including commercially important plant crops such as alfalfa. Because of its high nutritional value, there is a huge demand for this plant and its processed products in national and international markets, and an investigation into the possibility of applying microwaves to improve both the net yield and quality of the crop can be beneficial. Therefore, a dielectric measurement system based upon the probe reflection technique has been set up to measure dielectric properties of green plants over a frequency range from 300 MHz to 18 GHz, moisture contents from 12%, wet basis to 79%, wet basis, and temperatures from -15°C to 30°C. Dielectric properties of chopped alfalfa were measured with this system over frequency range of 300 MHz to 18 GHz, moisture content from 11.5%, wet basis, to 73%, wet basis, and density over the range from 139 kg m-3 to 716 kg m-3 at 23°C. The system accuracy was found to be +/-6% and +/-10% in measuring the dielectric constant and loss factor respectively. Empirical, semi empirical and theoretical models that require only moisture content and operating frequency were determined to represent the dielectric properties of both leaves and stems of alfalfa at 22°C. The empirical models fitted the measured dielectric data extremely well. The root mean square error (RMSE) and the coefficient of determination (r2) for dielectric constant and loss factor of leaves were 0.89 and 0.99, and 0.52 and 0.99 respectively. The RMSE and r2 values for dielectric constant and loss factor of stems were 0.89 and 0.99, and 0.77 and 0.99 respectively. Among semi empirical or theoretical models, Power law model showed better performance (RMSE = 1.78, r2 = 0.96) in modeling dielectric constant of leaves, and Debye-ColeCole model was more appropriate (RMSE = 1.23, r2 = 0.95) for the loss factor. For stems, the Debye-ColeCole models (developed on an assumption that they do not shrink as they dry) were found to be the best models to calculate the dielectric constant with RMSE 0.53 and r2 = 0.99, and dielectric loss factor with RMSE = 065 and r2 = 0.95. (Abstract shortened by UMI.)

Structural, optical and dielectric properties of graphene oxide

NASA Astrophysics Data System (ADS)

Bhargava, Richa; Khan, Shakeel

2018-05-01

The Modified Hummers method has been used to synthesize Graphene oxide nanoparticles. Microstructural analyses were carried out by X-ray diffraction and Fourier transform infrared spectroscopy. Optical properties were studied by UV-visible spectroscopy in the range of 200-700 nm. The energy band gap was calculated with the help of Tauc relation. The frequency dependence of dielectric constant and dielectric loss were studied over a range of the frequency 75Hz to 5MHz at room temperature. The dispersion in dielectric constant can be explained with the help of Maxwell-Wagner model in studied nanoparticles.

Fully Printed Flexible and Stretchable Electronics

NASA Astrophysics Data System (ADS)

Zhang, Suoming

Through this thesis proposal, the author has demonstrated series of flexible or stretchable sensors including strain gauge, pressure sensors, display arrays, thin film transistors and photodetectors fabricated by a direct printing process. By adopting the novel serpentine configuration with conventional non-stretchable materials silver nanoparticles, the fully printed stretchable devices are successfully fabricated on elastomeric substrate with the demonstration of stretchable conductors that can maintain the electrical properties under strain and the strain gauge, which could be used to measure the strain in desired locations and also to monitor individual person's finger motion. And by investigating the intrinsic stretchable materials silver nanowires (AgNWs) with the conventional configuration, the fully printed stretchable conductors are achieved on various substrates including Si, glass, Polyimide, Polydimethylsiloxane (PDMS) and Very High Bond (VHB) tape with the illustration of the capacitive pressure sensor and stretchable electroluminescent displays. In addition, intrinsically stretchable thin-film transistors (TFTs) and integrated logic circuits are directly printed on elastomeric PDMS substrates. The printed devices utilize carbon nanotubes and a type of hybrid gate dielectric comprising PDMS and barium titanate (BaTiO3) nanoparticles. The BaTiO3/PDMS composite simultaneously provides high dielectric constant, superior stretchability, low leakage, as well as good printability and compatibility with the elastomeric substrate. Both TFTs and logic circuits can be stretched beyond 50% strain along either channel length or channel width directions for thousands of cycles while showing no significant degradation in electrical performance. Finally, by applying the SWNTs as the channel layer of the thin film transistor, we successfully fabricate the fully printed flexible photodetector which exhibits good electrical characteristics and the transistors exhibit good reliability under bending conditions owing to the ultrathin polyimide substrate as well as the superior mechanical flexibility of the gate dielectric and carbon nanotube network. Furthermore, we have demonstrated that by using two types of SWCNT samples with different optical absorption characteristics, the photoresponse exhibits unique wavelength selectivity, as manifested by the good correlation between the responsive wavelengths of the devices with the absorption peaks of the corresponding carbon nanotubes. All the proposed materials above together with the unique direct printing process may offer an entry into more sophisticated flexible or stretchable electronic systems with monolithically integrated sensors, actuators, and displays for real life applications.

Crystal structure study of dielectric oxynitride perovskites La{sub 1−x}Sr{sub x}TiO{sub 2+x}N{sub 1−x} (x=0, 0.2)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Habu, Daiki; Masubuchi, Yuji; Torii, Shuki

As is the case with SrTaO{sub 2}N, both cis-ordering of nitride anions and octahedral titling are also preferable in La{sub 1−x}Sr{sub x}TiO{sub 2+x}N{sub 1−x} (x=0, 0.2) oxynitride perovskites. A larger dielectric constant of ε{sub r}≈5.0×10{sup 3} was estimated for the pure oxynitride with x=0.2, compared with ε{sub r}≈750 for the product with x=0, by extrapolating the ε{sub r} values obtained from powders mixed with paraffin at various mixing ratios. The crystal structure of x=0.2 with larger tolerance factor than x=0 increased the octahedral tilting, which contributes to the increased dielectric constant. The increased dielectric constant supports the exchange mechanism formore » the dielectric property between two kinds of –Ti–N– helical coils (clockwise and anticlockwise) derived from the above cis-ordering of nitride anions. - Graphical abstract: Very large dielectric constant values were estimated for La{sub 1−x}Sr{sub x}TiO{sub 2+x}N{sub 1−x}; ε{sub r}≈5.0×10{sup 3} in x=0.2 and ε{sub r}≈750 in x=0. - Highlights: • Cis-configuration of nitride anions was confirmed in La{sub 1−x}Sr{sub x}TiO{sub 2+x}N{sub 1−x} (x=0, 0.2). • Dielectric constant values were estimated to be 750 for x=0 and 5.0×10{sup 3} for x=0.2, respectively. • The large dielectric property is to the exchange mechanism between clockwise and anticlockwise –Ti–N– coil motifs.« less

Independence of the effective dielectric constant of an electrolytic solution on the ionic distribution in the linear Poisson-Nernst-Planck model.

PubMed

Alexe-Ionescu, A L; Barbero, G; Lelidis, I

2014-08-28

We consider the influence of the spatial dependence of the ions distribution on the effective dielectric constant of an electrolytic solution. We show that in the linear version of the Poisson-Nernst-Planck model, the effective dielectric constant of the solution has to be considered independent of any ionic distribution induced by the external field. This result follows from the fact that, in the linear approximation of the Poisson-Nernst-Planck model, the redistribution of the ions in the solvent due to the external field gives rise to a variation of the dielectric constant that is of the first order in the effective potential, and therefore it has to be neglected in the Poisson's equation that relates the actual electric potential across the electrolytic cell to the bulk density of ions. The analysis is performed in the case where the electrodes are perfectly blocking and the adsorption at the electrodes is negligible, and in the absence of any ion dissociation-recombination effect.

Electronic polarizability of light crude oil from optical and dielectric studies

NASA Astrophysics Data System (ADS)

George, A. K.; Singh, R. N.

2017-07-01

In the present paper we report the temperature dependence of density, refractive indices and dielectric constant of three samples of crude oils. The API gravity number estimated from the temperature dependent density studies revealed that the three samples fall in the category of light oil. The measured data of refractive index and the density are used to evaluate the polarizability of these fluids. Molar refractive index and the molar volume are evaluated through Lorentz-Lorenz equation. The function of the refractive index, FRI , divided by the mass density ρ, is a constant approximately equal to one-third and is invariant with temperature for all the samples. The measured values of the dielectric constant decrease linearly with increasing temperature for all the samples. The dielectric constant estimated from the refractive index measurements using Lorentz-Lorentz equation agrees well with the measured values. The results are promising since all the three measured properties complement each other and offer a simple and reliable method for estimating crude oil properties, in the absence of sufficient data.

Sensor and Methodology for Dielectric Analysis of Vegetal Oils Submitted to Thermal Stress

PubMed Central

Stevan, Sergio Luiz; Paiter, Leandro; Ricardo Galvão, José; Vieira Roque, Daniely; Sidinei Chaves, Eduardo

2015-01-01

Vegetable oils used in frying food represent a social problem as its destination. The residual oil can be recycled and returned to the production line, as biodiesel, as soap, or as putty. The state of the residual oil is determined according to their physicochemical characteristics whose values define its economically viable destination. However, the physicochemical analysis requires high costs, time and general cost of transporting. This study presents the use of a capacitive sensor and a quick and inexpensive method to correlate the physicochemical variables to the dielectric constant of the material undergoing oil samples to thermal cycling. The proposed method allows reducing costs in the characterization of residual oil and the reduction in analysis time. In addition, the method allows an assessment of the quality of the vegetable oil during use. The experimental results show the increasing of the dielectric constant with the temperature, which facilitates measurement and classification of the dielectric constant at considerably higher temperatures. The results also confirm a definitive degradation in used oil and a correlation between the dielectric constant of the sample with the results of the physicochemical analysis (iodine value, acid value, viscosity and refractive index). PMID:26501293

Sensor and methodology for dielectric analysis of vegetal oils submitted to thermal stress.

PubMed

Stevan, Sergio Luiz; Paiter, Leandro; Galvão, José Ricardo; Roque, Daniely Vieira; Chaves, Eduardo Sidinei

2015-10-16

Vegetable oils used in frying food represent a social problem as its destination. The residual oil can be recycled and returned to the production line, as biodiesel, as soap, or as putty. The state of the residual oil is determined according to their physicochemical characteristics whose values define its economically viable destination. However, the physicochemical analysis requires high costs, time and general cost of transporting. This study presents the use of a capacitive sensor and a quick and inexpensive method to correlate the physicochemical variables to the dielectric constant of the material undergoing oil samples to thermal cycling. The proposed method allows reducing costs in the characterization of residual oil and the reduction in analysis time. In addition, the method allows an assessment of the quality of the vegetable oil during use. The experimental results show the increasing of the dielectric constant with the temperature, which facilitates measurement and classification of the dielectric constant at considerably higher temperatures. The results also confirm a definitive degradation in used oil and a correlation between the dielectric constant of the sample with the results of the physicochemical analysis (iodine value, acid value, viscosity and refractive index).

Modification of the erythrocyte membrane dielectric constant by alcohols.

PubMed

Orme, F W; Moronne, M M; Macey, R I

1988-08-01

Aliphatic alcohols are found to stimulate the transmembrane fluxes of a hydrophobic cation (tetraphenylarsonium, TPA) and anion (AN-12) 5-20 times in red blood cells. The results are analyzed using the Born-Parsegian equation (Parsegian, A., 1969, Nature (London) 221:844-846), together with the Clausius-Mossotti equation to calculate membrane dielectric energy barriers. Using established literature values of membrane thickness, native membrane dielectric constant, TPA ionic radius, and alcohol properties (partition coefficient, molar volume, dielectric constant), the TPA permeability data is predicted remarkably well by theory. If the radius of AN-12 is taken as 1.9 A, its permeability in the presence of butanol is also described by our analysis. Further, the theory quantitatively accounts for the data of Gutknecht and Tosteson (Gutknecht, J., Tosteson, D.C., 1970, J. Gen. Physiol. 55:359-374) covering alcohol-induced conductivity changes of 3 orders of magnitude in artificial bilayers. Other explanations including perturbations of membrane fluidity, surface charge, membrane thickness, and dipole potential are discussed. However, the large magnitude of the stimulation, the more pronounced effect on smaller ions, and the acceleration of both anions and cations suggest membrane dielectric constant change as the primary basis of alcohol effects.

Enhanced dielectric and electrical properties of annealed PVDF thin film

NASA Astrophysics Data System (ADS)

Arshad, A. N.; Rozana, M. D.; Wahid, M. H. M.; Mahmood, M. K. A.; Sarip, M. N.; Habibah, Z.; Rusop, M.

2018-05-01

Poly (vinylideneflouride) (PVDF) thin films were annealed at various annealing temperatures ranging from 70°C to 170°C. This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in comparison to un-annealed PVDF (UN-PVDF), dielectric constant (10) at the same measured frequency. As the annealing temperature was increased from 90°C (AN90) to 150°C (AN150), the dielectric constant value of PVDF thin films was observed to decrease gradually to 11. AN70 also revealed low tangent loss (tan δ) value at similar frequency. With respect to its resistivity properties, the values were found to increase from 1.98×104 Ω.cm to 3.24×104 Ω.cm for AN70 and UN-PVDF films respectively. The improved in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C is the favorable annealing temperature for PVDF thin films. Hence, AN70 is a promising film to be utilized for application in electronic devices such as low frequency capacitor.

Giant dielectric response and low dielectric loss in Al{sub 2}O{sub 3} grafted CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajabtabar-Darvishi, A.; Center for Surface and Nanoanalytics; Bayati, R., E-mail: reza.bayati@intel.com, E-mail: mbayati@ncsu.edu, E-mail: wdfei@hit.edu.cn

2015-03-07

This study sheds light on the effect of alumina on dielectric constant and dielectric loss of novel CaCu{sub 3}Ti{sub 4}O{sub 12} composite ceramics. Alumina, at several concentrations, was deposited on the surface of CaCu{sub 3}Ti{sub 4}O{sub 12} particles via sol-gel technique. The dielectric constant significantly increased for all frequencies and the dielectric loss substantially decreased for low and intermediate frequencies. These observations were attributed to the change in characteristics of grains and grain boundaries. It was found that the insulating properties of the grain boundaries are improved following the addition of Al{sub 2}O{sub 3}. The relative density of CaCu{sub 3}Ti{submore » 4}O{sub 12}/Al{sub 2}O{sub 3} composite ceramics decreased compared to the pure CaCu{sub 3}Ti{sub 4}O{sub 12} and the grain size was greatly changed with the alumina content affecting the dielectric properties. With the addition of alumina into CaCu{sub 3}Ti{sub 4}O{sub 12}, tighter interfaces formed. The 6%- and 10%-alumina ceramics showed the minimum dielectric loss and the maximum dielectric constant, respectively. Both the dielectric constant and loss tangent decreased in the 20%-alumina ceramic due to the formation of CuO secondary phase. It was revealed that Al serves as an electron acceptor decreasing the electron concentration, if Al{sup 3+} ions substitute for Ti{sup 4+} ions, and as an electron donor increasing the electron concentration, if Al{sup 3+} ions substitute for Ca{sup 2+} ions. We established a processing-microstructure-properties paradigm which opens new avenues for novel applications of CaCu{sub 3}Ti{sub 4}O{sub 12}/Al{sub 2}O{sub 3} composite ceramics.« less

Microwave assisted synthesis and characterization of barium titanate nanoparticles for multi layered ceramic capacitor applications.

PubMed

Thirumalai, Sundararajan; Shanmugavel, Balasivanandha Prabu

2011-01-01

Barium titanate is a common ferroelectric electro-ceramic material having high dielectric constant, with photorefractive effect and piezoelectric properties. In this research work, nano-scale barium titanate powders were synthesized by microwave assisted mechano-chemical route. Suitable precursors were ball milled for 20 hours. TGA studies were performed to study the thermal stability of the powders. The powders were characterized by XRD, SEM and EDX Analysis. Microwave and Conventional heating were performed at 1000 degrees C. The overall heating schedule was reduced by 8 hours in microwave heating thereby reducing the energy and time requirement. The nano-scale, impurity-free and defect-free microstructure was clearly evident from the SEM micrograph and EDX patterns. LCR meter was used to measure the dielectric constant and dielectric loss values at various frequencies. Microwave heated powders showed superior dielectric constant value with low dielectric loss which is highly essential for the fabrication of Multi Layered Ceramic Capacitors.

Relationship between BaTiO₃ nanowire aspect ratio and the dielectric permittivity of nanocomposites.

PubMed

Tang, Haixiong; Zhou, Zhi; Sodano, Henry A

2014-04-23

The aspect ratio of barium titanate (BaTiO3) nanowires is demonstrated to be successfully controlled by adjusting the temperature of the hydrothermal growth from 150 to 240 °C, corresponding to aspect ratios from 9.3 to 45.8, respectively. Polyvinylidene fluoride (PVDF) nanocomposites are formed from the various aspect ratio nanowires and the relationship between the dielectric constant of the nanocomposite and the aspect ratio of the fillers is quantified. It was found that the dielectric constant of the nanocomposite increases with the aspect ratio of the nanowires. Nanocomposites with 30 vol % BaTiO3 nanowires and an aspect ratio of 45.8 can reach a dielectric constant of 44.3, which is 30.7% higher than samples with an aspect ratio of 9.3 and 352% larger than the polymer matrix. These results demonstrate that using high-aspect-ratio nanowires is an effective way to control and improve the dielectric performance of nanocomposites for future capacitor applications.

Influence of applied electric field annealing on the microwave properties of (Ba0.5Sr0.5)TiO3 thin films

NASA Astrophysics Data System (ADS)

Cho, Kwang-Hwan; Lee, Chil-Hyoung; Kang, Chong-Yun; Yoon, Seok-Jin; Lee, Young-Pak

2007-04-01

The effect of heat treatment in electric field on the structure and dielectric properties at microwave range of rf magnetron sputtering derived (Ba0.5Sr0.5)TiO3 thin films have been studied. It has been demonstrated that postannealing in the proper electric field can increase the dielectric constant and the tunability. The increased out-of-plane lattice constant in the electric-annealed films indicated the formation of small polar regions with tetragonal structure, which are responsible for the increased dielectric constant and tunability. It was proposed that the segregation of Ti3+ ions caused by electric annealing could induce the formation of BaTiO3-like regions, which are ferroelectric at room temperature. And in dielectric loss, as the Ti-O bonding lengths increase, the energy scattering on the ferroelectric mode also increases. So, the value of dielectric loss is slightly increased.

Surface Plasmon Waves on Thin Metal Films.

NASA Astrophysics Data System (ADS)

Craig, Alan Ellsworth

Surface-plasmon polaritons propagating on thin metal films bounded by dielectrics of nearly equal refractive indexes comprise two bound modes. Calculations indicate that, while the modes are degenerate on thick films, both the real and the imaginary components of the propagation constants for the modes split into two branches on successively thinner films. Considering these non-degenerate modes, the mode exhibiting a symmetric (antisymmetric) transverse profile of the longitudinally polarized electric field component, has propagation constant components both of which increase (decrease) with decreasing film thickness. Theoretical propagation constant eigenvalue (PCE) curves have been plotted which delineate this dependence of both propagation constant components on film thickness. By means of a retroreflecting, hemispherical glass coupler in an attenuated total reflection (ATR) configuration, light of wavelength 632.8 nm coupled to the modes of thin silver films deposited on polished glass substrates. Lorentzian lineshape dips in the plots of reflectance vs. angle of incidence indicate the presence of the plasmon modes. The real and imaginary components of the propagation constraints (i.e., the propagation constant and loss coefficient) were calculated from the angular positions and widths of the ATR resonances recorded. Films of several thicknesses were probed. Results which support the theoretically predicted curves were reported.

Phase-coherent elastic scattering of electromagnetic waves from a random array of resonant dielectric ridges on a dielectric substrate: Weak roughness limit

NASA Astrophysics Data System (ADS)

Danila, B.; McGurn, A. R.

2005-03-01

A theoretical discussion is given of the diffuse scattering of p -polarized electromagnetic waves from a vacuum-dielectric interface characterized by a one-dimensional disorder in the form of parallel, Gaussian shaped, dielectric ridges positioned at random on a planar semi-infinite dielectric substrate. The parameters of the surface roughness are chosen so that the surface is characterized as weakly rough with a low ridge concentration. The emphasis is on phase coherent features in the speckle pattern of light scattered from the surface. These features are determined from the intensity-intensity correlation function of the speckle pattern and are studied as functions of the frequency of light for frequencies near the dielectric frequency resonances of the ridge material. In the first part of the study, the ridges on the substrate are taken to be identical, made from either GaAs, NaF, or ZnS. The substrate for all cases is CdS. In a second set of studies, the heights and widths of the ridges are statistically distributed. The effects of these different types of randomness on the scattering from the random array of dielectric ridges is determined near the dielectric resonance frequency of the ridge material. The work presented is an extension of studies [A. B. McGurn and R. M. Fitzgerald, Phys. Rev. B 65, 155414 (2002)] that originally treated only the differential reflection coefficient of the diffuse scattering of light (not speckle correlation functions) from a system of identical ridges. The object of the present work is to demonstrate the effects of the dielectric frequency resonances of the ridge materials on the phase coherent features found in the speckle patterns of the diffusely scattered light. The dielectric frequency resonances are shown to enhance the observation of the weak localization of electromagnetic surface waves at the random interface. The frequencies treated in this work are in the infrared. Previous weak localization studies have concentrated mainly on the visible and ultraviolet.

Graphene-Based Flexible and Transparent Tunable Capacitors.

PubMed

Man, Baoyuan; Xu, Shicai; Jiang, Shouzheng; Liu, Aihua; Gao, Shoubao; Zhang, Chao; Qiu, Hengwei; Li, Zhen

2015-12-01

We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By transferring another graphene layer, we fabricated flexible and transparent capacitors with the structure of graphene-BMN-graphene. The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm. Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm. This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.

Perovskite CaCu3Ti4O12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity

NASA Astrophysics Data System (ADS)

Fiorenza, P.; Lo Nigro, R.; Sciuto, A.; Delugas, P.; Raineri, V.; Toro, R. G.; Catalano, M. R.; Malandrino, G.

2009-03-01

The physical properties of CaCu3Ti4O12 (CCTO) thin films grown by metal organic chemical vapor deposition on LaAlO3 substrates have been investigated. The structural, compositional, and optical characteristics have been evaluated, and all the collected data demonstrated that in the obtained (001) epitaxial CCTO thin films, a low defect density is present. The electrical behavior of the deposited thin films has been studied from both micro- and nanoscopic points of view and compared with the properties reported in the literature. The electrical measurements on large area capacitors indicated that in the investigated work frequency range (102-106 Hz), the CCTO films possess dielectric constants close to the theoretically predicted "intrinsic" value and almost independent of the frequency. The nanoscopic dielectric investigation demonstrated that the deposited CCTO films possess n-type semiconducting nature and that a colossal extrinsic behavior can be locally achieved.

Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.

PubMed

Jo, Seo-Hyeon; Lee, Sung-Gap; Lee, Young-Hie

2012-01-05

In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.

Direct and Inverse Techniques of Guided-Mode Resonance Filters Designs

NASA Technical Reports Server (NTRS)

Tibuleac, Sorin; Magnusson, Robert; Maldonado, Theresa A.; Zuffada, Cinzia

1997-01-01

Guided-mode resonances arise in single or multilayer waveguides where one or more homogeneous layers are replaced by diffraction gratings (Fig. 1.) The diffractive element enables an electromagnetic wave incident on a waveguide grating to be coupled to the waveguide modes supportable by the structure in the absence of the modulation (i.e. the difference between the high and low dielectric constants of the grating) at specific values of the wavelength and incident angle. The periodic modulation of the guide makes the structure leaky, preventing sustained propagation of modes in the waveguide and coupling the waves out into the substrate and cover. As the wavelength is varied around resonance a rapid variation in the intensities of the external propagating waves occurs. By selecting a grating period small enough to eliminate the higher-order propagating waves, an increase in the zero-order intensities up to 100% can result. The pronounced frequency selectivity of guided-mode resonances in dielectric waveguide gratings can be applied to design high-efficiency reflection and transmission filters [1-3].

Epitaxial Ferroelectric Ba(0.5)Sr(0.5)TiO3 Thin Films for Room-Temperature High-Frequency Tunable Element Applications

NASA Technical Reports Server (NTRS)

Chen, C. L.; Feng, H. H.; Zhang, Z.; Brazdeikis, A.; Miranda, F. A.; VanKeuls, F. W.; Romanofsky, R. R.; Huang, Z. J.; Liou, Y.; Chu, W. K.;

Enhanced polarization and dielectric properties of Pb(Zr1-xTix)O3 thin films

NASA Astrophysics Data System (ADS)

Ortega, N.; Kumar, Ashok; Katiyar, R. S.

2008-10-01

We report the fabrication of PbZr0.57Ti0.43O3 (PZT) thin films with preferential growth along (111) and random crystalline orientation on the platinized silicon substrates using pulsed laser deposition technique. X-ray diffraction patterns and surface morphology indicate increase in grain size and nucleation, which support better perovskite matrix with increase in annealing temperature. We observed large dielectric constant (˜4000) and enhanced remanent polarization 70 μC/cm2 at room temperature attributed to grain growth and intermetallic Pt-Pb transient phase. Frequency dependent polarization showed minor reduction in polarization above 10 kHz frequencies. Normalized fatigue characteristic of PZT thin films showed minimal 25% degradation in remanent polarization after 109 cycles, which may be useful for memory devices. ac conductivity spectra illustrated that anomaly near the phase transition temperature with activation energy (Ea˜0.60-0.75 eV) supports the intrinsic nature of ferroelectric phase transition.

Wearable Inset-Fed FR4 Microstrip Patch Antenna Design

NASA Astrophysics Data System (ADS)

Zaini, S. R. Mohd; Rani, K. N. Abdul

2018-03-01

This project proposes the design of a wireless body area network (WBAN) microstrip patch antenna covered by the jeans fabric as the outer layer operating at the center frequency, fc of 2.40 GHz. Precisely, the microstrip patch antenna with the inset-fed edge technique is designed and simulated systematically by using the Keysight Advanced Design System (ADS) software where the FR4 board with the dielectric constant, ɛr of 4.70, dissipation factor or loss tangent, tan δ of 0.02 and height, h of 1.60 mm is the chosen dielectric substrate. The wearable microstrip patch antenna design is then fabricated using the FR4 printed circuit board (PCB) material, hidden inside the jeans fabric, and attached to clothing, such as a jacket accordingly. Simulation and fabrication measurement results show that the designed microstrip patch antenna characteristics can be applied significantly within the industrial, scientific, and medical (ISM) radio band, which is at fc = 2.40 GHz.

Grain size effect on the giant dielectric constant of CaCu3Ti4O12 nanoceramics prepared by mechanosynthesis and spark plasma sintering

NASA Astrophysics Data System (ADS)

Ahmad, Mohamad M.; Yamada, Koji

2014-04-01

In the present work, CaCu3Ti4O12 (CCTO) nanoceramics with different grain sizes were prepared by spark plasma sintering (SPS) at different temperatures (SPS-800, SPS-900, SPS-975, and SPS-1050) of the mechanosynthesized nano-powder. Structural and microstructural properties were studied by XRD and field-emission scanning electron microscope measurements. The grain size of CCTO nanoceramics increases from 80 nm to ˜200 nm for the ceramics sintered at 800 °C and 975 °C, respectively. Further increase of SPS temperature to 1050 °C leads to micro-sized ceramics of 2-3 μm. The electrical and dielectric properties of the investigated ceramics were studied by impedance spectroscopy. Giant dielectric constant was observed in CCTO nanoceramics. The dielectric constant increases with increasing the grain size of the nanoceramics with values of 8.3 × 103, 2.4 × 104, and 3.2 × 104 for SPS-800, SPS-900, and SPS-975, respectively. For the micro-sized SPS-1050 ceramics, the dielectric constant dropped to 2.14 × 104. The dielectric behavior is interpreted within the internal barrier layer capacitance picture due to the electrical inhomogeneity of the ceramics. Besides the resistive grain boundaries that are usually observed in CCTO ceramics, domain boundaries appear as a second source of internal layers in the current nanoceramics.

Cast dielectric composite linear accelerator

DOEpatents

Sanders, David M [Livermore, CA; Sampayan, Stephen [Manteca, CA; Slenes, Kirk [Albuquerque, NM; Stoller, H M [Albuquerque, NM

2009-11-10

A linear accelerator having cast dielectric composite layers integrally formed with conductor electrodes in a solventless fabrication process, with the cast dielectric composite preferably having a nanoparticle filler in an organic polymer such as a thermosetting resin. By incorporating this cast dielectric composite the dielectric constant of critical insulating layers of the transmission lines of the accelerator are increased while simultaneously maintaining high dielectric strengths for the accelerator.

Note: cryogenic microstripline-on-Kapton microwave interconnects.

PubMed

Harris, A I; Sieth, M; Lau, J M; Church, S E; Samoska, L A; Cleary, K

2012-08-01

Simple broadband microwave interconnects are needed for increasing the size of focal plane heterodyne radiometer arrays. We have measured loss and crosstalk for arrays of microstrip transmission lines in flex circuit technology at 297 and 77 K, finding good performance to at least 20 GHz. The dielectric constant of Kapton substrates changes very little from 297 to 77 K, and the electrical loss drops. The small cross-sectional area of metal in a printed circuit structure yields overall thermal conductivities similar to stainless steel coaxial cable. Operationally, the main performance tradeoffs are between crosstalk and thermal conductivity. We tested a patterned ground plane to reduce heat flux.

Influence of test capacitor features on piezoelectric and dielectric measurement of ferroelectric films.

PubMed

Wang, Zhihong; Lau, Gih Keong; Zhu, Weiguang; Chao, Chen

2006-01-01

This paper presents both theoretical and numerical analyses of the piezoelectric and dielectric responses of a highly idealized film-on-substrate system, namely, a polarized ferroelectric film perfectly bonded to an elastic silicon substrate. It shows that both effective dielectric and piezoelectric properties of the films change with the size and configuration of the test capacitor. There exists a critical electrode size that is smaller than the diameter of the commonly used substrate. The effective film properties converge to their respective constrained values as capacitor size increases to the critical size. If capacitor size is smaller than the critical size, the surface displacement at the top electrode deviates from the net thickness change in response to an applied voltage because the film is deformable at the film/substrate interface. The constrained properties of the films depend only on those of bulk ferroelectrics but are independent of film thickness and substrate properties. The finding of the critical capacitor size together with analytical expressions of the constrained properties makes it possible to realize consistent measurement of piezoelectric and dielectric properties of films. A surface scanning technique is recommended to measure the profile of piezoresponses of the film so that the constrained properties of the film can be identified accurately.

Enhanced dielectric properties of Fe-substituted TiO2 nanoparticles

NASA Astrophysics Data System (ADS)

Ali, T.; Ahmed, Ateeq; Naseem siddique, M.; Tripathi, P.

2018-04-01

We report the structural and dielectric properties Ti1-xFexO2 (0.00 < x < 0.10) nanoparticles (NPs) synthesized by sol-gel method. The synthesized material has been characterized by soft X-ray absorption spectroscopy (SXAS) in order to investigate the fine structure and electronic valence state. SXAS analysis reveals that Fe-ions exist only in 3+ valance state in all the samples. The dielectric properties were studied by the use of LCR impedance spectroscopy. The dielectric constants, dielectric loss and A.C. conductivity have been determined as a function of frequency and composition of iron. At higher frequencies, the materials exhibited high AC Conductivity and low dielectric constant. The above theory could be explained by 'Maxwell Wagner Model' and may provide a new insight to fabricate nanomaterials having possible electrical application.

Heat treatment effects on dielectric properties of SRFe{sub 12}O{sub 19} hexaferrite prepared by an SHS route

DOE Office of Scientific and Technical Information (OSTI.GOV)

Panchal, Nital R.; Jotania, Rajshree B., E-mail: natal_panchal@yahoo.co.in, E-mail: rbjotania@gmail.com

2011-07-01

The M-type Strontium Hexaferrite SRFe{sub 12}O{sub 19} particles were prepared by a Self propagating High temperature Synthesis (SHS) route. Precursors were heated under two different conditions: microwave heating for 30 minutes and sintered at 950 deg C for 4 hrs. The dielectric properties: dielectric constant ({epsilon}{sup '}), dielectric loss (tan {delta} ) and ac conductivity ({sigma}{sub ac}) were measured at room temperature in the frequency range from 100 Hz to 2 MHz. The samples present a non-linear behavior for the dielectric constant at 1 kHz, 100 kHz and 2 MHz. The dielectric properties of prepared Strontium Hexaferrite samples were discussedmore » in view of applications as a material for microwave devices, permanent magnets and high density magnetic recording media. (author)« less

Stiff, strong, yet tough free-standing dielectric films of graphene nanosheets-polyurethane nanocomposites with very high dielectric constant and loss

NASA Astrophysics Data System (ADS)

Jan, Rahim; Habib, Amir; Gul, Iftikhar Hussain

2016-01-01

In this study, graphene nanosheets (GNS) prepared through a liquid exfoliation technique are dispersed in thermoplastic polyurethane (TPU) at a volume fraction (Vf) of up to 0.19. Then, the electrical and mechanical properties of the obtained composites are characterized. The dielectric spectroscopy shows an excessive variation in dielectric constant (1.1 to 3.53 × 107) and dielectric tangent loss (0.03 to 2515) with varying Vf over the frequency range of 25 kHz to 5 MHz. A considerable enhancement in electrical conductivity (DC) is found, from 3.87 × 10-10 S/m (base polymer) to 53.5 S/m for the 0.19 Vf GNS-TPU nanocomposite. The GNS-TPU composites are mechanically robust, with a considerable increase in stiffness (˜4-fold) and strength (almost twice), maintaining its ductility up to 0.09 Vf GNS. The high dielectric constant at lower frequencies is attributed to the well-established Maxwell-Wagner polarization effect, whereas the high dielectric tangent loss is due to leakage currents as a physical conducting network is formed at high filler loadings. The layered structure, high aspect ratio, and improved dispersion of GNS are the main reasons for the improvement in both the dielectric characteristics and the mechanical properties of the host polymer. [Figure not available: see fulltext.

Influence of rare earth ion doping (Ce and Dy) on electrical and magnetic properties of cobalt ferrites

NASA Astrophysics Data System (ADS)

Hashim, Mohd.; Raghasudha, M.; Meena, Sher Singh; Shah, Jyoti; Shirsath, Sagar E.; Kumar, Shalendra; Ravinder, D.; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

2018-03-01

Ce and Dy substituted Cobalt ferrites with the chemical composition CoCexDyxFe2-2xO4 (x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) were synthesized through the chemical route, citrate-gel auto-combustion method. The structural characterization was carried out with the help of XRD Rieveld analysis, SEM and EDAX analysis. Formation of spinel cubic structure of the ferrites was confirmed by XRD analysis. SEM and EDAX results show that the particles are homogeneous with slight agglomeration without any impurity pickup. The effect of RE ion doping (Ce and Dy) on the dielectric, magnetic and impedance studies was systematically investigated by LCR meter, Vibrating Sample Magnetometer and Impedance analyzer respectively at room temperature in the frequency range of 10 Hz-10 MHz. Various dielectric parameters viz., dielectric constant, dielectric loss and ac conductivity were measured. The dielectric constant of all the ferrite compositions shows normal dielectric dispersion of ferrites with frequency. Impedance analysis confirms that the conduction in present ferrites is majorly due to the grain boundary mechanism. Ferrite sample with x = 0.03 show high dielectric constant, low dielectric loss and hence can be utilized in high frequency electromagnetic devices. Magnetization measurements indicate that with increase in Ce and Dy content in cobalt ferrites, the magnetization values decreased and coercivity has increased.

Influence of Al3+ substitution on the electrical resistivity and dielectric behavior of Ni0.25Cu0.20Zn0.55AlxFe2-xO4 ferrites synthesized by solid state reaction technique

NASA Astrophysics Data System (ADS)

Rahman, K. R.; Chowdhury, F.-U.-Z.; Khan, M. N. I.

2017-12-01

In this paper, the effect of Al3+ substitution on the electrical and dielectric properties of Ni0.25Cu0.20Zn0.55AlxFe2-xO4 ferrites with x = 0.0, 0.05. 0.10, 0.15 and 0.20, synthesized by solid state reaction has been reported. Using two probe method, the DC resistivity has been investigated in the temperature range from 30 °C to 300 °C. Activation energy was calculated from the Arrhenius plot. The electrical conduction is explained on the basis of the hopping mechanism. The frequency dependent dielectric properties of these spinel ferrites have been studied at room temperature by measuring AC resistivity, conductivity (σac), dielectric constant and dielectric loss tangent (tan δ) in the frequency range between 1 kHz and 120 MHz. The study of dielectric properties showed that the dielectric constant and dielectric loss increased with increasing non-magnetic Al ions. The dependence of dielectric constant with frequency has been explained by Maxwell-Wagner interfacial polarization. Cole-Cole plots show semicircular arc(s) for the samples, and equivalent RC circuits have been proposed to clarify the phenomena involved therein. The analysis of complex impedance spectroscopy has been used to distinguish between the grain and grain boundary contribution to the total resistance.

Metamaterial Behavior of Polymer Nanocomposites Based on Polypropylene/Multi-Walled Carbon Nanotubes Fabricated by Means of Ultrasound-Assisted Extrusion

PubMed Central

Pérez-Medina, Juan C.; Waldo-Mendoza, Miguel A.; Cruz-Delgado, Víctor J.; Quiñones-Jurado, Zoe V.; González-Morones, Pablo; Ziolo, Ronald F.; Martínez-Colunga, Juan G.; Soriano-Corral, Florentino; Avila-Orta, Carlos A.

2016-01-01

Metamaterial behavior of polymer nanocomposites (NCs) based on isotactic polypropylene (iPP) and multi-walled carbon nanotubes (MWCNTs) was investigated based on the observation of a negative dielectric constant (ε′). It is demonstrated that as the dielectric constant switches from negative to positive, the plasma frequency (ωp) depends strongly on the ultrasound-assisted fabrication method, as well as on the melt flow index of the iPP. NCs were fabricated using ultrasound-assisted extrusion methods with 10 wt % loadings of MWCNTs in iPPs with different melt flow indices (MFI). AC electrical conductivity (σ(AC)) as a function of frequency was determined to complement the electrical classification of the NCs, which were previously designated as insulating (I), static-dissipative (SD), and conductive (C) materials. It was found that the SD and C materials can also be classified as metamaterials (M). This type of behavior emerges from the negative dielectric constant observed at low frequencies although, at certain frequencies, the dielectric constant becomes positive. Our method of fabrication allows for the preparation of metamaterials with tunable ωp. iPP pure samples show only positive dielectric constants. Electrical conductivity increases in all cases with the addition of MWCNTs with the largest increases observed for samples with the highest MFI. A relationship between MFI and the fabrication method, with respect to electrical properties, is reported. PMID:28774042

Integrated field emission array for ion desorption

DOEpatents

Resnick, Paul J; Hertz, Kristin L.; Holland, Christopher; Chichester, David

2016-08-23

An integrated field emission array for ion desorption includes an electrically conductive substrate; a dielectric layer lying over the electrically conductive substrate comprising a plurality of laterally separated cavities extending through the dielectric layer; a like plurality of conically-shaped emitter tips on posts, each emitter tip/post disposed concentrically within a laterally separated cavity and electrically contacting the substrate; and a gate electrode structure lying over the dielectric layer, including a like plurality of circular gate apertures, each gate aperture disposed concentrically above an emitter tip/post to provide a like plurality of annular gate electrodes and wherein the lower edge of each annular gate electrode proximate the like emitter tip/post is rounded. Also disclosed herein are methods for fabricating an integrated field emission array.

Integrated field emission array for ion desorption

DOEpatents

Resnick, Paul J; Hertz, Kristin L; Holland, Christopher; Chichester, David; Schwoebel, Paul

2013-09-17

An integrated field emission array for ion desorption includes an electrically conductive substrate; a dielectric layer lying over the electrically conductive substrate comprising a plurality of laterally separated cavities extending through the dielectric layer; a like plurality of conically-shaped emitter tips on posts, each emitter tip/post disposed concentrically within a laterally separated cavity and electrically contacting the substrate; and a gate electrode structure lying over the dielectric layer, including a like plurality of circular gate apertures, each gate aperture disposed concentrically above an emitter tip/post to provide a like plurality of annular gate electrodes and wherein the lower edge of each annular gate electrode proximate the like emitter tip/post is rounded. Also disclosed herein are methods for fabricating an integrated field emission array.

Giant voltage-induced deformation of a dielectric elastomer under a constant pressure

NASA Astrophysics Data System (ADS)

Godaba, Hareesh; Foo, Choon Chiang; Zhang, Zhi Qian; Khoo, Boo Cheong; Zhu, Jian

2014-09-01

Dielectric elastomer actuators coupled with liquid have recently been developed as soft pumps, soft lenses, Braille displays, etc. In this paper, we investigate the performance of a dielectric elastomer actuator, which is coupled with water. The experiments demonstrate that the membrane of a dielectric elastomer can achieve a giant voltage-induced area strain of 1165%, when subject to a constant pressure. Both theory and experiment show that the pressure plays an important role in determining the electromechanical behaviour. The experiments also suggest that the dielectric elastomer actuators, when coupled with liquid, may suffer mechanical instability and collapse after a large amount of liquid is enclosed by the membrane. This failure mode needs to be taken into account in designing soft actuators.

Simulation of Charged Systems in Heterogeneous Dielectric Media via a True Energy Functional

NASA Astrophysics Data System (ADS)

Jadhao, Vikram; Solis, Francisco J.; de la Cruz, Monica Olvera

2012-11-01

For charged systems in heterogeneous dielectric media, a key obstacle for molecular dynamics (MD) simulations is the need to solve the Poisson equation in the media. This obstacle can be bypassed using MD methods that treat the local polarization charge density as a dynamic variable, but such approaches require access to a true free energy functional, one that evaluates to the equilibrium electrostatic energy at its minimum. In this Letter, we derive the needed functional. As an application, we develop a Car-Parrinello MD method for the simulation of free charges present near a spherical emulsion droplet separating two immiscible liquids with different dielectric constants. Our results show the presence of nonmonotonic ionic profiles in the dielectric with a lower dielectric constant.

Polymer (PDMS-Fe3O4) magneto-dielectric substrate for a MIMO antenna array

NASA Astrophysics Data System (ADS)

Alqadami, Abdulrahman Shueai Mohsen; Jamlos, Mohd Faizal; Soh, Ping Jack; Kamarudin, Muhammad Ramlee

2016-01-01

This paper presents the design of a 2 × 4 multiple-input multiple-output (MIMO) antenna array fabricated on a nanocomposite magneto-dielectric polymer substrate. The 10-nm iron oxide (Fe3O4) nanoparticles and polydimethylsiloxane (PDMS) composite is used as substrate to enhance the performance of a MIMO antenna array. The measured results showed up to 40.8 % enhancement in terms of bandwidth, 9.95 dB gain, and 57 % of radiation efficiency. Furthermore, it is found that the proposed magneto-dielectric (PDMS-Fe3O4) composite substrate provides excellent MIMO parameters such as correlation coefficient, diversity gain, and mutual coupling. The prototype of the proposed antenna is transparent, flexible, lightweight, and resistant against dust and corrosion. Measured results indicate that the proposed antenna is suitable for WLAN and ultra-wideband biomedical applications within frequency range of 5.33-7.70 GHz.

Dielectric spectroscopy of Dy2O3 doped (K0.5Na0.5)NbO3 piezoelectric ceramics

NASA Astrophysics Data System (ADS)

Mahesh, P.; Subhash, T.; Pamu, D.

2014-06-01

We report the dielectric properties of ( K 0.5 Na 0.5 ) NbO 3 ceramics doped with x wt% of Dy 2 O 3 (x= 0.0-1.5 wt%) using the broadband dielectric spectroscopy. The X-ray diffraction studies showed the formation of perovskite structure signifying that Dy 2 O 3 diffuse into the KNN lattice. Samples doped with x > 0.5 wt% exhibit smaller grain size and lower relative densities. The dielectric properties of KNN ceramics doped with Dy 2 O 3 are enhanced by increasing the Dy 3+ content; among the compositions studied, x = 0.5 wt% exhibited the highest dielectric constant and lowest loss at 1MHz over the temperature range of 30°C to 400°C. All the samples exhibit maximum dielectric constant at the Curie temperature (˜ 326°C) and a small peak in the dielectric constant at around 165°C is due to a structural phase transition. At the request of all authors, and by agreement with the Proceedings Editors, a corrected version of this article was published on 19 June 2014. The full text of the Corrigendum is attached to the corrected article PDF file.

The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, M.-H., E-mail: mhliaoa@ntu.edu.tw; Lien, C.

2015-05-15

Five different kinds of insulators including BaTiO{sub 3}, TiO{sub 2}, Al{sub 2}O{sub 3}, CdO and ZnO on the n-type InGaAs metal-insulator-semiconductor (M-I-S) ohmic contact structure are studied. The effect for the dielectric constant (ε) of inserted insulator and the conduction band offset (CBO) between an insulator and semiconductor substrate is analyzed by a unified M-I-S contact model. Based on the theoretical model and experimental data, we demonstrates that the inserted ZnO insulator with the high electron affinity and the low CBO (∼0.1 eV) to the InGaAs substrate results in ∼10 times contact resistivity reduction, even the ε of ZnO ismore » not pretty high (∼10)« less

Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

PubMed Central

Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

2016-01-01

Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies. PMID:28070341

Effect of Mn doping on the temperature-dependent anomalous giant dielectric behavior of CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Kim, C. H.; Jang, Y. H.; Seo, S. J.; Song, C. H.; Son, J. Y.; Yang, Y. S.; Cho, J. H.

2012-06-01

We report dielectric properties and dielectric relaxation behaviors of Mn-substituted CaCu3Ti4O12 (CCTO) on Cu sites. While CCTO exhibits the giant dielectric constant and low dielectric loss in a wide temperature range, drastic suppression of the dielectric constant in Mn-doped CCTO (CCMTO) samples have been observed in temperature and frequency dependencies of dielectric properties with two possible origins as Mn doping increases. The observed suppression of dielectric response in the low Mn doping differs from the heavy doping of Mn in CCMTO samples. The low-Mn-doped CCMTO samples (x=0.01 and 0.02) show that the relaxation time and the activation energy Ea were slightly reduced due to a decreased contribution from the density of the dipolar effect. However, in heavily doped CCMTO samples (x=0.03, 0.04, and 0.05), the dielectric response, relaxation time, and Ea were significantly decreased, suggesting Mn doping plays a significant role in the destruction of the intrinsic dipolar effect.

Classification of Solvents according to Interaction Mechanisms.

ERIC Educational Resources Information Center

Ahmed, Wasi

1979-01-01

Presented is a model for solvent effects based on the observation that the excitation energy of all-trans-N-Retinylidenmethyl-n-butylammonium iodide is directly related to the dielectric constant of a series of aromatic and aliphatic solvents as the dielectric constant (e) ranges from 2 to 10.5. (BT)

Cellulose Triacetate Dielectric Films For Capacitors

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S.; Jow, T. Richard

1994-01-01

Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

Investigation of multiferroic behavior on flakes-like BiFeO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheikh, Javed R.; Gaikwad, Vishwajit M.; Acharya, Smita A., E-mail: saha275@yahoo.com

2016-05-23

In present work, multiferroic BiFeO{sub 3} was synthesized by hydrothermal route. The rhombohedral structure was confirmed X-ray diffraction pattern and data fitted with Reitveld refinement using Full-Prof software suite. SEM micrograph shows flake like morphology. Frequency and temperature dependence of dielectric constant and dielectric loss were studied and detected enhancement in dielectric constant. The magnetic measurement indicates antiferromagnetic nature of BFO. P-E curve shows ferroelectic hysteresis loop with remanent polarization (2Pr) 0.3518 µC/cm{sup 2}. The dielectric anomaly observed near T{sub N} can be assigned to magnetoelectric coupling which is useful in device application.

High-speed droplet actuation on single-plate electrode arrays.

PubMed

Banerjee, Arghya Narayan; Qian, Shizhi; Joo, Sang Woo

2011-10-15

This paper reports a droplet-based microfluidic device composed of patterned co-planar electrodes in an all-in-a-single-plate arrangement and coated with dielectric layers for electrowetting-on-dielectric (EWOD) actuation of discrete droplets. The co-planar arrangement is preferred over conventional two-plate electrowetting devices because it provides simpler manufacturing process, reduced viscous drag, and easier liquid-handling procedures. These advantages lead to more versatile and efficient microfluidic devices capable of generating higher droplet speed and can incorporate various other droplet manipulation functions into the system for biological, sensing, and other microfluidic applications. We have designed, fabricated, and tested the devices using an insulating layer with materials having relatively high dielectric constant (SiO(2)) and compared the results with polymer coatings (Cytop) with low dielectric constant. Results show that the device with high dielectric layer generates more reproducible droplet transfer over a longer distance with a 25% reduction in the actuation voltage with respect to the polymer coatings, leading to more energy efficient microfluidic applications. We can generate droplet speeds as high as 26 cm/s using materials with high dielectric constant such as SiO(2). Copyright © 2011. Published by Elsevier Inc.

Rationally designed polyimides for high-energy density capacitor applications.

PubMed

Ma, Rui; Baldwin, Aaron F; Wang, Chenchen; Offenbach, Ido; Cakmak, Mukerrem; Ramprasad, Rampi; Sotzing, Gregory A

2014-07-09

Development of new dielectric materials is of great importance for a wide range of applications for modern electronics and electrical power systems. The state-of-the-art polymer dielectric is a biaxially oriented polypropylene (BOPP) film having a maximal energy density of 5 J/cm(3) and a high breakdown field of 700 MV/m, but with a limited dielectric constant (∼2.2) and a reduced breakdown strength above 85 °C. Great effort has been put into exploring other materials to fulfill the demand of continuous miniaturization and improved functionality. In this work, a series of polyimides were investigated as potential polymer materials for this application. Polyimide with high dielectric constants of up to 7.8 that exhibits low dissipation factors (<1%) and high energy density around 15 J/cm(3), which is 3 times that of BOPP, was prepared. Our syntheses were guided by high-throughput density functional theory calculations for rational design in terms of a high dielectric constant and band gap. Correlations of experimental and theoretical results through judicious variations of polyimide structures allowed for a clear demonstration of the relationship between chemical functionalities and dielectric properties.

Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O(3)-PZT thin films.

PubMed

Wasa, Kiyotaka; Adachi, Hideaki; Nishida, Ken; Yamamoto, Takashi; Matsushima, Tomoaki; Kanno, Isaku; Kotera, Hidetoshi

2012-01-01

In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, ξPb(Mn,Nb)O3-(1 - ξ)PZT, were grown on SrRuO(3)/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec > 180 kV/cm, large remanent polarization, P(r) = 100 μC/cm(2), small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600 °C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m(2) for PZT(48/52) at ξ = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS. © 2012 IEEE

Vacuum ultraviolet thin films. I - Optical constants of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 thin films. II - Vacuum ultraviolet all-dielectric narrowband filters

NASA Technical Reports Server (NTRS)

Zukic, Muamer; Torr, Douglas G.; Spann, James F.; Torr, Marsha R.

1990-01-01

An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.

Barium titanate nanocrystals and nanocrystal thin films: Synthesis, ferroelectricity, and dielectric properties

NASA Astrophysics Data System (ADS)

Huang, Limin; Chen, Zhuoying; Wilson, James D.; Banerjee, Sarbajit; Robinson, Richard D.; Herman, Irving P.; Laibowitz, Robert; O'Brien, Stephen

2006-08-01

Advanced applications for high k dielectric and ferroelectric materials in the electronics industry continues to demand an understanding of the underlying physics in decreasing dimensions into the nanoscale. We report the synthesis, processing, and electrical characterization of thin (<100nm thick) nanostructured thin films of barium titanate (BaTiO3) built from uniform nanoparticles (<20nm in diameter). We introduce a form of processing as a step toward the ability to prepare textured films based on assembly of nanoparticles. Essential to this approach is an understanding of the nanoparticle as a building block, combined with an ability to integrate them into thin films that have uniform and characteristic electrical properties. Our method offers a versatile means of preparing BaTiO3 nanocrystals, which can be used as a basis for micropatterned or continuous BaTiO3 nanocrystal thin films. We observe the BaTiO3 nanocrystals crystallize with evidence of tetragonality. We investigated the preparation of well-isolated BaTiO3 nanocrystals smaller than 10nm with control over aggregation and crystal densities on various substrates such as Si, Si /SiO2, Si3N4/Si, and Pt-coated Si substrates. BaTiO3 nanocrystal thin films were then prepared, resulting in films with a uniform nanocrystalline grain texture. Electric field dependent polarization measurements show spontaneous polarization and hysteresis, indicating ferroelectric behavior for the BaTiO3 nanocrystalline films with grain sizes in the range of 10-30nm. Dielectric measurements of the films show dielectic constants in the range of 85-90 over the 1KHz -100KHz, with low loss. We present nanocrystals as initial building blocks for the preparation of thin films which exhibit highly uniform nanostructured texture and grain sizes.

Microstructure and dielectric properties of silver-barium titanate nanocomplex materials by wet chemical approach

NASA Astrophysics Data System (ADS)

Ueno, Shintaro; Sakamoto, Yasunao; Nakashima, Kouichi; Wada, Satoshi

2014-09-01

To develop ceramic capacitors with a high effective dielectric constant, we attempted to fabricate BaTiO3 (BT) complexes with embedded Ag nanoparticles by wet chemical processes. Ag nanoparticle-adsorbed dendritic BT particles, Ag-BT hybrid particles, were synthesized from the sol-gel-derived precursor gel powders containing Ag, Ba, and Ti by hydrothermal treatment. These particles were pressed with BT fillers and TiO2 precursor nanoparticles into green compacts, and then, the green compacts were chemically converted into the Ag/BT nanocomplex compacts in Ba(OH)2 aqueous solution under the hydrothermal condition at 160 °C. The effective dielectric constant of the resultant Ag/BT nanocomplexes increases with an increase in Ag content. The maximal effective dielectric constant of approximately 900 was recorded for the nanocomplex with the Ag content of 10.7 vol %.

Giant dielectric constant in CaCu3Ti4O12-MgB2 composites near the percolation threshold

NASA Astrophysics Data System (ADS)

Mukherjee, Rupam; Fernandez, Lucia; Lawes, Gavin; Nadgorny, Boris

2013-03-01

We have investigated the enhancement of the dielectric constant K in CaCu3Ti4O12 (CCTO)-MgB2 composite near the percolation threshold. To optimize the dielectric properties of pure CCTO we have sintered the samples at variuos temperatures. We will present the results of the measurements of K in a broad frequency for pure CCTO for the samples sintered at 1100°C and 500°C. Commercially available MgB2 powder was mixed with different weight fractions of CCTO and the pressure of 1GPa was applied to form composite pellets. Near the percolation threshold PC, CCTO/MgB2 composite system exhibit a dramatic increase of the dielectric constant K by several orders of magnitude, compared to pure CCTO. We will also discuss the magnetic field dependence of the capacitance of CCTO composite powders.

Effect of organic flux on the colossal dielectric constant of CaCu3Ti4O12 (CCTO)

NASA Astrophysics Data System (ADS)

Razdan, Vishnu; Singh, Abhishek; Arnold, Brad; Choa, Fow-Sen; Kelly, Lisa; Singh, N. B.

2015-05-01

We have used low temperature organics to achieve orientation of the grains of Ca2/3Cu3Ti4O12 (CCTO) compound to increase the resistivity. During the past fifteen years CCTO has been studied extensively for its performance as a dielectric capacitor. We have synthesized and grown large grains of pure Ca2/3Cu3Ti4O12 and doped compound, and studied the dielectric constant and resistivity. The grains were aligned by using a naphthalene-camphor eutectic. CCTO was mixed in the organic melt and oriented by the directional solidification method. This material has different characteristics than pure processed CCTO material. The effect of solidification conditions and its effect on the morphology and the dielectric constant, resistivity and loss tan delta of pure and doped CCTO are described in this article.

Temperature-dependent ac conductivity and dielectric response of vanadium doped CaCu3Ti4O12 ceramic

NASA Astrophysics Data System (ADS)

Sen, A.; Maiti, U. N.; Thapa, R.; Chattopadhyay, K. K.

2011-09-01

Successful incorporation of vanadium dopant within the giant dielectric material CaCu 3Ti 4O12 (CCTO) through a conventional solid-state sintering process is achieved and its influence on the dielectric as well as electrical properties as a function of temperature and frequency is reported here. Proper crystalline phase formation together with dopant induced lattice constant shrinkage was confirmed through X-ray diffraction. The temperature dependence of the dielectric constant at different constant frequencies was investigated. We infer that the correlated barrier hopping (CBH) model is dominant in the conduction mechanism of the ceramic as per the temperature-dependent ac conductivity measurements. The electronic parameters such as density of the states at the Fermi level, N( E f) and hopping distance, R ω of the ceramic were also calculated using this model.

Large change in dielectric constant of CaCu3Ti4O12 under violet laser

NASA Astrophysics Data System (ADS)

Masingboon, C.; Thongbai, P.; King, P. D. C.; Maensiri, S.; Meevasana, W.

2013-03-01

This work reports the influence of light illumination on the dielectric constant of CaCu3Ti4O12 (CCTO) polycrystals which exhibit giant dielectric constant. When the CCTO samples were exposed to 405-nm laser light, the enhancement in capacitance as high as 22% was observed for the first time, suggesting application of light-sensitive capacitance devices. To understand this change better microscopically, we also performed electronic-structure measurements using photoemission spectroscopy, and measured the electrical conductivity of the CCTO samples under different conditions of light exposure and oxygen partial pressure. All these measurements suggest that this large change is driven by oxygen vacancy induced by the irradiation.

Self-assembly and structural relaxation in a model ionomer melt

DOE PAGES

Goswami, Monojoy; Borreguero, Jose M.; Sumpter, Bobby G.

2015-02-26

Molecular dynamics simulations are used to understand the self-assembly and structural relaxation in ionomer melts containing less than 10% degree of ionization on the backbone. We study the self-assembly of charged sites and counterions that show structural ordering and agglomeration with a range of structures that can be achieved by changing the dielectric constant of the medium. The intermediate scattering function shows a decoupling of charge and counterion relaxation at longer length scales for only high dielectric constant and at shorter length scales for all dielectric constants. Finally, the slow structural decay of counterions in the strongly correlated ionomer systemmore » closely resembles transport properties of semi-flexible polymers.« less

High-throughput screening of inorganic compounds for the discovery of novel dielectric and optical materials

DOE PAGES

Petousis, Ioannis; Mrdjenovich, David; Ballouz, Eric; ...

2017-01-31

Dielectrics are an important class of materials that are ubiquitous in modern electronic applications. Even though their properties are important for the performance of devices, the number of compounds with known dielectric constant is on the order of a few hundred. Here, we use Density Functional Perturbation Theory as a way to screen for the dielectric constant and refractive index of materials in a fast and computationally efficient way. Our results constitute the largest dielectric tensors database to date, containing 1,056 compounds. Details regarding the computational methodology and technical validation are presented along with the format of our publicly availablemore » data. In addition, we integrate our dataset with the Materials Project allowing users easy access to material properties. Finally, we explain how our dataset and calculation methodology can be used in the search for novel dielectric compounds.« less

High-throughput screening of inorganic compounds for the discovery of novel dielectric and optical materials

PubMed Central

Petousis, Ioannis; Mrdjenovich, David; Ballouz, Eric; Liu, Miao; Winston, Donald; Chen, Wei; Graf, Tanja; Schladt, Thomas D.; Persson, Kristin A.; Prinz, Fritz B.

2017-01-01

Dielectrics are an important class of materials that are ubiquitous in modern electronic applications. Even though their properties are important for the performance of devices, the number of compounds with known dielectric constant is on the order of a few hundred. Here, we use Density Functional Perturbation Theory as a way to screen for the dielectric constant and refractive index of materials in a fast and computationally efficient way. Our results constitute the largest dielectric tensors database to date, containing 1,056 compounds. Details regarding the computational methodology and technical validation are presented along with the format of our publicly available data. In addition, we integrate our dataset with the Materials Project allowing users easy access to material properties. Finally, we explain how our dataset and calculation methodology can be used in the search for novel dielectric compounds. PMID:28140408

New dielectric ceramics Pb(Cd)BiM/sup IV/SbO/sub 7/ (M/sup IV/ = Ti, Zr, Sn) with the pyrochlore structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lambachri, A.; Monier, M.; Mercurio, J.P.

1988-04-01

Dielectric ceramics have been obtained by natural sintering of pyrochlore phases with general formula Pb(Cd)BiM/sup IV/SbO/sub 7/ (M/sup IV/ = Ti, Zr, Sn). Low frequency dielectric characteristics have been studied with respect to the processing conditions: sintering without additive and in the presence of some low melting compounds (PbO, Pb/sub 5/Ge/sub 3/O/sub 11/, Bi/sub 12/PbO/sub 19/ and Bi/sub 12/CdO/sub 19/). The dielectric constants of these ceramics lie between 30 and 60, the dielectric losses range from 10 to 30.10/sup -4/ and the temperature coefficient of the dielectric constants (20 - 100/sup 0/C) can be tailored by means of additives inmore » the +- 30 ppm K/sup -1/ range.« less

High-throughput screening of inorganic compounds for the discovery of novel dielectric and optical materials.

PubMed

Petousis, Ioannis; Mrdjenovich, David; Ballouz, Eric; Liu, Miao; Winston, Donald; Chen, Wei; Graf, Tanja; Schladt, Thomas D; Persson, Kristin A; Prinz, Fritz B

2017-01-31

Dielectrics are an important class of materials that are ubiquitous in modern electronic applications. Even though their properties are important for the performance of devices, the number of compounds with known dielectric constant is on the order of a few hundred. Here, we use Density Functional Perturbation Theory as a way to screen for the dielectric constant and refractive index of materials in a fast and computationally efficient way. Our results constitute the largest dielectric tensors database to date, containing 1,056 compounds. Details regarding the computational methodology and technical validation are presented along with the format of our publicly available data. In addition, we integrate our dataset with the Materials Project allowing users easy access to material properties. Finally, we explain how our dataset and calculation methodology can be used in the search for novel dielectric compounds.

Nanocomposites of polyimide and mixed oxide nanoparticles for high performance nanohybrid gate dielectrics in flexible thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Ju Hyun; Hwang, Byeong-Ung; Kim, Do-Il; Kim, Jin Soo; Seol, Young Gug; Kim, Tae Woong; Lee, Nae-Eung

2017-05-01

Organic gate dielectrics in thin film transistors (TFTs) for flexible display have advantages of high flexibility yet have the disadvantage of low dielectric constant (low- k). To supplement low- k characteristics of organic gate dielectrics, an organic/inorganic nanocomposite insulator loaded with high- k inorganic oxide nanoparticles (NPs) has been investigated but high loading of high- k NPs in polymer matrix is essential. Herein, compositing of over-coated polyimide (PI) on self-assembled (SA) layer of mixed HfO2 and ZrO2 NPs as inorganic fillers was used to make dielectric constant higher and leakage characteristics lower. A flexible TFT with lower the threshold voltage and high current on/off ratio could be fabricated by using the hybrid gate dielectric structure of the nanocomposite with SA layer of mixed NPs on ultrathin atomic-layer deposited Al2O3. [Figure not available: see fulltext.

Short range ferromagnetic, magneto-electric, and magneto-dielectric effect in ceramic Co{sub 3}TeO{sub 6}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Harishchandra, E-mail: singh85harish@gmail.com, E-mail: singh85harish@rrcat.gov.in; Ghosh, Haranath; Indus Synchrotrons Utilization Division, Raja Ramanna Center for Advanced Technology, Indore 452013

2016-01-28

We report observation of magneto-electric and magneto-dielectric couplings along with short range ferromagnetic order in ceramic Cobalt Tellurate (Co{sub 3}TeO{sub 6}, CTO) using magnetic, structural, dielectric, pyroelectric, and polarization studies. DC magnetization along with dielectric constant measurements indicate a coupling between magnetic order and electrical polarization. A strong anomaly in the dielectric constant at ∼17.4 K in zero magnetic field indicates spontaneous electric polarization, consistent with a recent neutron diffraction study. Observation of weak short range ferromagnetic order at lower temperatures is attributed to the Griffiths-like ferromagnetism. Furthermore, magnetic field dependence of the ferroelectric transition follows earlier theoretical predictions, applicable tomore » single crystal CTO. Finally, combined dielectric, pyroelectric, and polarization measurements suggest that the ground state of CTO may possess spontaneous symmetry breaking in the absence of magnetic field.« less

Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

S Kim; M Jang; H Yang

2011-12-31

Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, weremore » characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.« less

Broadbanding of circularly polarized patch antenna by waveguided magneto-dielectric metamaterial

NASA Astrophysics Data System (ADS)

Yang, Xin Mi; Wen, Juan; Liu, Chang Rong; Liu, Xue Guan; Cui, Tie Jun

2015-12-01

Design of bandwidth-enhanced circularly polarized (CP) patch antenna using artificial magneto-dielectric substrate was investigated. The artificial magneto-dielectric material adopted here takes the form of waveguided metamaterial (WG-MTM). In particular, the embedded meander line (EML) structure was employed as the building element of the WG-MTM. As verified by the retrieved effective medium parameters, the EML-based waveguided magneto-dielectric metamaterial (WG-MDM) exhibits two-dimensionally isotropic magneto-dielectric property with respect to TEM wave excitations applied in two orthogonal directions. A CP patch antenna loaded with the EML-based WG-MDM (WG-MDM antenna) has been proposed and its design procedure is described in detail. Simulation results show that the impedance and axial ratio bandwidths of the WG-MDM antenna have increased by 125% and 133%, respectively, compared with those obtained with pure dielectric substrate offering the same patch size. The design of the novel WG-MDM antenna was also validated by measurement results, which show good agreement with their simulated counterparts.

Dielectric cracking produced by electromigration in microelectronic interconnects

NASA Astrophysics Data System (ADS)

Chiras, S.; Clarke, D. R.

2000-12-01

The development of stress during electromigration along Al lines, constrained within a dielectric in a coplanar test configuration, is measured. It is shown that, above a certain threshold current density, cracking of the dielectric is induced in the vicinity of the anode. Cracking of the dielectric leads to loss of mechanical constraint on the aluminum conductor which, in turn, leads to increases in electrical resistance with continued current flow. The electromigration-induced stresses are determined from the measured frequency shifts induced in a novel ruby strain sensor embedded immediately beneath the interconnect line on a sapphire substrate. The transparency of the sapphire substrate also facilitated the observation of a hitherto unreported form of dielectric cracking, namely cracking from the interconnect along internal interfaces. The observations of dielectric cracking are in agreement with a recent fracture mechanics model. Analysis of the stress data, together with the results of finite element calculations of the strain energy release rate for crack extension, gives a quantitative estimate of the effective valence Z*(=1.3±0.2) for aluminum.

Automated Microwave Dielectric Constant Measurement

DTIC Science & Technology

1987-03-01

IJSWC TR 86-46 AD.-A 184 182 AUTOMATED MICROWAVE DIELECTRIC CONSTANT MEASUREMENT SYTIEM BY B. C. GLANCY A. KRALL PESEARCH AND TECHNOLOGY DEPARTMENT...NO0. NO. ACCESSION NO. Silver Spring, Maryland 20903-500061152N ZROO1 ZRO131 R1AA29 11. TITLE (Include Security Classification) AUTOMATED MICROWAVE ...constants as a funct on of microwave frequency has been simplified using an automated testing apparatus. This automated procedure is based on the use of a

Review of Slow-Wave Structures

NASA Technical Reports Server (NTRS)

Wallett, Thomas M.; Qureshi, A. Haq

1994-01-01

The majority of recent theoretical and experimental reports published in the literature dealing with helical slow-wave structures focus on the dispersion characteristics and their effects due to the finite helix wire thickness and attenuation, dielectric loading, metal loading, and the introduction of plasma. In many papers, an effective dielectric constant is used to take into account helix wire dimensions and conductivity losses, while the propagation constant of the signal and the interaction impedance of the structure are found to depend on the surface resistivity of the helix. Also, various dielectric supporting rods are simulated by one or several uniform cylinders having an effective dielectric constant, while metal vane loading and plasma effects are incorporated in the effective dielectric constant. The papers dealing with coupled cavities and folded or loaded wave guides describe equivalent circuit models, efficiency enhancement, and the prediction of instabilities for these structures. Equivalent circuit models of various structures are found using computer software programs SUPERFISH and TOUCHSTONE. Efficiency enhancement in tubes is achieved through dynamic velocity and phase adjusted tapers using computer techniques. The stability threshold of unwanted antisymmetric and higher order modes is predicted using SOS and MAGIC codes and the dependence of higher order modes on beam conductance, section length, and effective Q of a cavity is shown.

Surface Plasmon Resonance Evaluation of Colloidal Metal Aerogel Filters

NASA Technical Reports Server (NTRS)

Smith, David D.; Sibille, Laurent; Cronise, Raymond J.; Noever, David A.

1997-01-01

Surface plasmon resonance imaging has in the past been applied to the characterization of thin films. In this study we apply the surface plasmon technique not to determine macroscopic spatial variations but rather to determine average microscopic information. Specifically, we deduce the dielectric properties of the surrounding gel matrix and information concerning the dynamics of the gelation process from the visible absorption characteristics of colloidal metal nanoparticles contained in aerogel pores. We have fabricated aerogels containing gold and silver nanoparticles. Because the dielectric constant of the metal particles is linked to that of the host matrix at the surface plasmon resonance, any change 'in the dielectric constant of the material surrounding the metal nanoparticles results in a shift in the surface plasmon wavelength. During gelation the surface plasmon resonance shifts to the red as the average or effective dielectric constant of the matrix increases. Conversely, formation of an aerogel or xerogel through supercritical extraction or evaporation of the solvent produces a blue shift in the resonance indicating a decrease in the dielectric constant of the matrix. From the magnitude of this shift we deduce the average fraction of air and of silica in contact with the metal particles. The surface area of metal available for catalytic gas reaction may thus be determined.

Dielectric and modulus analysis of the photoabsorber Cu2SnS3

NASA Astrophysics Data System (ADS)

Lahlali, S.; Essaleh, L.; Belaqziz, M.; Chehouani, H.; Alimoussa, A.; Djessas, K.; Viallet, B.; Gauffier, J. L.; Cayez, S.

2017-12-01

Dielectric properties of the ternary semiconductor compound Cu2SnS3 is studied for the first time in the high temperature range from 300 °C to 440 °C with the frequency range 1 kHz to 1 MHz. The dielectric constant ε ‧ and dielectric loss tan (δ) were observed to increase with temperature and decrease rapidly with frequency to remains constant at high frequencies. The variation of the dielectric loss Ln (ε ") with L n (ω) was found to follow the empirical law, ε " = B ω m (T). The dielectric data were analyzed using complex electrical modulus M* at various temperatures. The activation energy responsible for the relaxation is estimated from the analysis of the modulus spectra. The value of the hopping barrier potential is estimated from the dielectric loss and compared with the value previously obtained from ac-conductivity. These results are critical for understanding the behavior of based polycrystalline family of Cu2SnS3 for absorber materials in solar-cells.

Effect of solution combusted TiO2 nanopowder within commercial BaTiO3 dielectric layer on the photoelectric properties for AC powder electroluminescence devices.

PubMed

Park, Sung; Choi, Gil Rak; Kim, Youn Cheol; Lee, Jae Chun; Lee, Ju Hyeon

2013-05-01

A unique synthesis method was developed, which is called solution combustion method (SCM). TiO2 nanopowder was synthesized by this method. This SCM TiO2 nanopowder (-35 nm) was added to the dielectric layer of AC powder electroluminescence (EL) device. The dielectric layer was made of commercial BaTiO3 powder (-1.2 microm) and binding polymer. 0, 5, 10 and 15 wt% of SCM TiO2 nanopowder was added to the dielectric layer during fabrication of AC powder EL device respectively. Dielectric constant of these four kinds of dielectric layers was measured. The brightness and current density of AC powder EL device were also measured. When 10 wt% of SCM TiO2 nanopowder was added, dielectric constant and brightness were increased by 30% and 101% respectively. Furthermore, the current density was decreased by 71%. This means that the brightness was double and the power consumption was one third.

γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

NASA Astrophysics Data System (ADS)

Teffahi, A.; Hamri, D.; Djeghlouf, A.; Abboun Abid, M.; Saidane, A.; Al Saqri, N.; Felix, J. F.; Henini, M.

2018-06-01

Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90-290 K temperature range and 50-2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric constant, dielectric loss, tangent loss and ac conductivity. It is shown that exposure to γ-rays irradiation leads to reduction in effective trap density believed to result from radiation-induced traps annulations. An increase in series resistance is attributed to a net doping reduction. Dielectric constant (ε') shows usual step-like transitions with corresponding relaxation peaks in dielectric loss. These peaks shift towards lower temperature as frequency decrease. Temperature dependant ac conductivity followed an Arrhenius relation with activation energy of 153 meV in the 200-290 K temperature range witch correspond to As vacancy. The results indicate that γ-rays irradiation improves the dielectric and electrical properties of the diode due to the defect annealing effect.

Dielectric properties of organic solvents from non-polarizable molecular dynamics simulation with electronic continuum model and density functional theory.

PubMed

Lee, Sanghun; Park, Sung Soo

2011-11-03

Dielectric constants of electrolytic organic solvents are calculated employing nonpolarizable Molecular Dynamics simulation with Electronic Continuum (MDEC) model and Density Functional Theory. The molecular polarizabilities are obtained by the B3LYP/6-311++G(d,p) level of theory to estimate high-frequency refractive indices while the densities and dipole moment fluctuations are computed using nonpolarizable MD simulations. The dielectric constants reproduced from these procedures are evaluated to provide a reliable approach for estimating the experimental data. An additional feature, two representative solvents which have similar molecular weights but are different dielectric properties, i.e., ethyl methyl carbonate and propylene carbonate, are compared using MD simulations and the distinctly different dielectric behaviors are observed at short times as well as at long times.

Material with high dielectric constant, low dielectric loss, and good mechanical and thermal properties produced using multi-wall carbon nanotubes wrapped with poly(ether sulphone) in a poly(ether ether ketone) matrix

NASA Astrophysics Data System (ADS)

Zhang, Shuling; Wang, Hongsong; Wang, Guibin; Jiang, Zhenhua

2012-07-01

A material with high dielectric constant, low dielectric loss, and good mechanical and thermal properties was produced using multi-wall carbon nanotubes (MWCNTs) wrapped with poly(ether sulphone) (PES) dispersed in a poly(ether ether ketone) (PEEK) matrix. The material was fabricated using melt-blending, and MWCNT/PEEK composites show different degrees of improvement in the measured dielectric, mechanical, and thermal properties as compared to pure PEEK. This is attributed to the high conductivity of MWCNTs, the effect of wrapping MWCNTs with PES, the good dispersion of the wrapped MWCNTs in PEEK, and the strong interfacial adhesion between the wrapped MWCNTs and the PEEK.

Dielectric properties of benzylamine in 1,2,6-hexanetriol mixture using time domain reflectometry technique

NASA Astrophysics Data System (ADS)

Swami, M. B.; Hudge, P. G.; Pawar, V. P.

The dielectric properties of binary mixtures of benzylamine-1,2,6-hexantriol mixtures at different volume fractions of 1,2,6-hexanetriol have been measured using Time Domain Reflectometry (TDR) technique in the frequency range of 10 MHz to 30 GHz. Complex permittivity spectra were fitted using Havriliak-Negami equation. By using least square fit method the dielectric parameters such as static dielectric constant (ɛ0), dielectric constant at high frequency (ɛ∞), relaxation time τ (ps) and relaxation distribution parameter (β) were extracted from complex permittivity spectra at 25∘C. The intramolecular interaction of different molecules has been discussed using the Kirkwood correlation factor, Bruggeman factor. The Kirkwood correlation factor (gf) and effective Kirkwood correlation factor (geff) indicate the dipole ordering of the binary mixtures.

Holmium hafnate: An emerging electronic device material

NASA Astrophysics Data System (ADS)

Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

2015-03-01

We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

Dielectric response of a nondegenerate electron gas in semiconductor nanocrystallites

NASA Astrophysics Data System (ADS)

van Faassen, E.

1998-12-01

We investigate the low-frequency dielectric response of a dilute electron gas in a small spherical semiconductor particle. The flow of the electrons is described by hydrodynamic equations which incorporate the electrostatic interactions between the electrons in a self-consistent fashion. In the low-frequency regime, the dielectric loss is small and proportional to the frequency, despite substantial field penetration into the semiconductor. The loss remains small even for high doping levels due to effective cancellation between field-induced drift and diffusion. The model is used to estimate the complex dielectric constant of a system of weakly conducting nanosized semiconductor particles. The most prominent manifestation of spatial dispersion is that photoinduced changes in the real and imaginary parts of the dielectric constant are positive and of comparable magnitude.

Radiation characteristics of a source in a thin substrate mounted over a dielectric medium

NASA Technical Reports Server (NTRS)

Engheta, Nader; Elachi, Charles

1988-01-01

The radiation pattern of a line source is calculated for the case in which the source is lying on the top or the bottom surface of a lossless dielectric substrate that is mounted on the top of semiinfinite dielectric medium. It is found that in both cases the pattern along the interfaces has a null; that the pattern in the upper semiinfinite medium has a single lobe; and that the pattern in the lower semiinfinite medium has many lobes, the number of which varies with the substrate thickness. In both cases, the power radiated into the lower medium is more than that radiated into the upper medium. Applications of this calculation to remote sensing, microstrip antenna technology, and antenna arrays are discussed.

Use of Ground Penetrating Radar at the FAA's National Airport Pavement Test Facility

NASA Astrophysics Data System (ADS)

Injun, Song

2015-04-01

The Federal Aviation Administration (FAA) in the United States has used a ground-coupled Ground Penetrating Radar (GPR) at the National Airport Pavement Test Facility (NAPTF) since 2005. One of the primary objectives of the testing at the facility is to provide full-scale pavement response and failure information for use in airplane landing gear design and configuration studies. During the traffic testing at the facility, a GSSI GPR system was used to develop new procedures for monitoring Hot Mix Asphalt (HMA) pavement density changes that is directly related to pavement failure. After reviewing current setups for data acquisition software and procedures for identifying different pavement layers, dielectric constant and pavement thickness were selected as dominant parameters controlling HMA properties provided by GPR. A new methodology showing HMA density changes in terms of dielectric constant variations, called dielectric sweep test, was developed and applied in full-scale pavement test. The dielectric constant changes were successfully monitored with increasing airplane traffic numbers. The changes were compared to pavement performance data (permanent deformation). The measured dielectric constants based on the known HMA thicknesses were also compared with computed dielectric constants using an equation from ASTM D4748-98 Standard Test Method for Determining the Thickness of Bound Pavement Layers Using Short-Pulse Radar. Six inches diameter cylindrical cores were taken after construction and traffic testing for the HMA layer bulk specific gravity. The measured bulk specific gravity was also compared to monitor HMA density changes caused by aircraft traffic conditions. Additionally this presentation will review the applications of the FAA's ground-coupled GPR on embedded rebar identification in concrete pavement, sewer pipes in soil, and gage identifications in 3D plots.

Constraining Bulk Densities of Near-Earth Asteroid Surfaces from Radar Observations Using Laboratory Measurements of Permittivity

NASA Astrophysics Data System (ADS)

Hickson, D. C.; Boivin, A.; Daly, M. G.; Ghent, R. R.; Nolan, M. C.; Tait, K.; Cunje, A.; Tsai, C. A.

2017-12-01

Planetary radar is widely used to survey the Near-Earth Asteroid (NEA) population and can provide insight into target shapes, sizes, and spin states. The dual-polarization reflectivity is sensitive to surface roughness as well as material properties, specifically the real part of the complex permittivity, or dielectric constant. Knowledge of the behavior of the dielectric constant of asteroid regolith analogue material with environmental parameters can be used to inversely solve for such parameters, such as bulk density, from radar observations. In this study laboratory measurements of the complex permittivity of powdered aluminum oxide and dunite samples are performed in a low-pressure environment chamber using a coaxial transmission line from roughly 1 GHz to 8.5 GHz. The bulk densities of the samples are varied across the measurements by incrementally adding silica aerogel, a low-density material with a very low dielectric constant. This allows the alteration of the proportions of void space to solid particle grains to achieve microgravity-relevant porosities without significantly altering the dielectric properties of the powder sample. The data are then modeled using various electromagnetic mixing equations to characterize the change in dielectric constant with increasing volume fractions of void space (decreasing bulk density). Using spectral analogues as constraints on the composition of NEAs allows us to calculate the range in bulk densities in the near surface of NEAs that have been observed by planetary radar. Utilizing existing radar data from Arecibo Observatory we calculate the bulk density in the near-surface on (101955) Bennu, the target of NASA's OSIRIS-Rex mission, to be ρ = 1.27 ± 0.33 g cm-3 based on an average of the likely range in particle density and dielectric constant of the regolith material.

THE ONSET OF ELECTRICAL BREAKDOWN IN DUST LAYERS: II. EFFECTIVE DIELECTRIC CONSTANT AND LOCAL FIELD ENHANCEMENT

EPA Science Inventory

Part 1 of the work has shown that electrical breakdown in dust layers obeys Paschen's Law, but occurs at applied field values which appear too small to initiate the breakdown. In this paper the authors show how an effective dielectric constant characterizing the dust layer can be...

Process for lowering the dielectric constant of polyimides using diamic acid additives

NASA Technical Reports Server (NTRS)

Stoakley, Diane M. (Inventor); St.clair, Anne K. (Inventor)

1990-01-01

Linear aromatic polyimides with low dielectric constants are produced by adding a diamic acid additive to the polyamic acid resin formed by the condensation of an aromatic dianhydride with an aromatic diamine. The resulting modified polyimide is a better electrical insulator than state-of-the-art commercially available polyimides.

Microwave dielectric measurements of erythrocyte suspensions.

PubMed Central

Bao, J Z; Davis, C C; Swicord, M L

1994-01-01

Complex dielectric constants of human erythrocyte suspensions over a frequency range from 45 MHz to 26.5 GHz and a temperature range from 5 to 40 degrees C have been determined with the open-ended coaxial probe technique using an automated vector network analyzer (HP 8510). The spectra show two separate major dispersions (beta and gamma) and a much smaller dispersion between them. The two major dispersions are analyzed with a dispersion equation containing two Cole-Cole functions by means of a complex nonlinear least squares technique. The parameters of the equation at different temperatures have been determined. The low frequency behavior of the spectra suggests that the dielectric constant of the cell membrane increases when the temperature is above 35 degrees C. The real part of the dielectric constant at approximately 3.4 GHz remains almost constant when the temperature changes. The dispersion shifts with temperature in the manner of a thermally activated process, and the thermal activation enthalpies for the beta- and gamma-dispersions are 9.87 +/- 0.42 kcal/mol and 4.80 +/- 0.06 kcal/mol, respectively. PMID:8075351

Effects of BOX engineering on analogue/RF and circuit performance of InGaAs-OI-Si MOSFET

NASA Astrophysics Data System (ADS)

Maity, Subir Kr.; Pandit, Soumya

2017-11-01

InGaAs is an attractive choice as alternate channel material in n-channel metal oxide semiconductor transistor for high-performance applications. However, electrostatic integrity of such device is poor. In this paper, we present a comprehensive technology computer-aided design simulation-based study of the effect of scaling the thickness of the buried oxide (BOX) region and varying the dielectric constant of BOX material on the electrostatic integrity, analogue/radio frequency (RF) performance and circuit performance of InGaAs-on-Insulator device. Device with thin BOX layer gives better drain-induced barrier lowering performance which enhances output resistance. The carrier mobility remains almost constant with thinning of BOX layer up to certain value. By lowering the dielectric constant of the BOX material, it is further possible to improve the analogue and RF performance. Effect of BOX thickness scaling and role of BOX dielectric material on gain-frequency response of common source amplifier is also studied. It is observed that frequency response of the amplifier improves for thin BOX and with low dielectric constant-based material.

Effect of N2 Plasma Annealing on Properties of Fluorine Doped Silicon Dioxide Films with Low Dielectric Constant for Ultra-Large-Scale Integrated Circuits

NASA Astrophysics Data System (ADS)

Zhang, Wei; Wang, Peng-Fei; Ding, Shi-Jin; Wang, Ji-Tao; William, Wei Lee

2002-06-01

The influence of N2 plasma annealing on the properties of fluorine doped silicon oxide (SiOF) films is investigated. The stability of the dielectric constant of SiOF film is remarkably improved by the N2 plasma annealing. After enduring a moisture absorption test for six hours in a chamber with 60% humidity at 50°C, the dielectric constant variation of the annealed SiOF films is only 1.5%, while the variation for those SiOF films without annealing is 15.5%. Fourier transform infrared spectroscopic results show that the absorption peaks of Si-OH and H-OH of SiOF films are reduced after the N2 plasma annealing because the annealing can wipe off some unstable Si-F2 bonds in SiOF films. These unstable Si-F2 bonds are suitable to react with water, resulting in the degradation of SiOF film properties. Therefore, the N2 plasma annealing meliorates the properties of SiOF films with low dielectric constant.

Electrostatic force spectroscopy revealing the degree of reduction of individual graphene oxide sheets.

PubMed

Shen, Yue; Wang, Ying; Zhou, Yuan; Hai, Chunxi; Hu, Jun; Zhang, Yi

2018-01-01

Electrostatic force spectroscopy (EFS) is a method for monitoring the electrostatic force microscopy (EFM) phase with high resolution as a function of the electrical direct current bias applied either to the probe or sample. Based on the dielectric constant difference of graphene oxide (GO) sheets (reduced using various methods), EFS can be used to characterize the degree of reduction of uniformly reduced one-atom-thick GO sheets at the nanoscale. In this paper, using thermally or chemically reduced individual GO sheets on mica substrates as examples, we characterize their degree of reduction at the nanoscale using EFS. For the reduced graphene oxide (rGO) sheets with a given degree of reduction (sample n), the EFS curve is very close to a parabola within a restricted area. We found that the change in parabola opening direction (or sign the parabola opening value) indicates the onset of reduction on GO sheets. Moreover, the parabola opening value, the peak bias value (tip bias leads to the peak or valley EFM phases) and the EFM phase contrast at a certain tip bias less than the peak value can all indicate the degree of reduction of rGO samples, which is positively correlated with the dielectric constant. In addition, we gave the ranking of degree for reduction on thermally or chemically reduced GO sheets and evaluated the effects of the reducing conditions. The identification of the degree of reduction of GO sheets using EFS is important for reduction strategy optimization and mass application of GO, which is highly desired owing to its mechanical, thermal, optical and electronic applications. Furthermore, as a general and quantitative technique for evaluating the small differences in the dielectric properties of nanomaterials, the EFS technique will extend and facilitate its nanoscale electronic devices applications in the future.

Piezoelectric ceramics with high dielectric constants for ultrasonic medical transducers.

PubMed

Hosono, Yasuharu; Yamashita, Yohachi

2005-10-01

Complex system ceramics Pb(Sc(1/2)Nb(1/2))O3-Pb(Mg(1/3)Nb(2/3))O3-Pb(Ni(1/2)Nb(1/2))O3-(Pb0.965,Sr0.035) (Zr,Ti)O3 (PSN-PMN-PNN-PSZT abbreviated PSMNZT) have been synthesized by the conventional technique, and dielectric and piezoelectric properties of the ceramics have been investigated for ultrasonic medical transducers. High capacitances of the transducers are desired in order to match the electrical impedance between the transducers and the coaxial cable in array probes. Although piezoelectric ceramics that have high dielectric constants (epsilon33t/epsilon0 > 5000, k'33 < 70%) are produced in many foundries, the dielectric constants are insufficient. However, we have reported that low molecular mass B-site ions in the lead-perovskite structures are important in realizing better dielectric and piezoelectric properties. We focused on the complex system ceramics PSMNZT that consists of light B-site elements. The maximum dielectric constant, epsilon33T/epsilon0 = 7, 200, was confirmed in the ceramics, where k'33 = 69%, d33 = 940 pC/N, and T(c) = 135 degrees C were obtained. Moreover, pulse-echo characteristics were simulated using the Mason model. The PSMNZT ceramic probe showed echo amplitude about 5.5 dB higher than that of the conventional PZT ceramic probe (PZT-5H type). In this paper, the electrical properties of the PSMNZT ceramics and the simulation results for pulse-echo characteristics of the phased-array probes are introduced.