Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

PubMed

Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

2013-10-18

Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The nanocrystal/furfuryl alcohol dispersions are suitable for the fabrication of thin films by chemical deposition techniques, including spin-coating, printing or a spraying process. To demonstrate the application of this technique to device fabrication, a multilayer capacitor with capacitance of 0.83 nF mm(-2) at 1 MHz is presented.

Reflectance properties of one-dimensional metal-dielectric ternary photonic crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pandey, G. N., E-mail: gnpandey2009@gmail.com; Kumar, Narendra; Thapa, Khem B.

2016-05-06

Metallic photonic crystal has a very important application in absorption enhancement in solar cells. It has been found that an ultra-thin metallic layer becomes transparent due to internal scattering of light through the each interface of the dielectric and metal surfaces. The metal has absorption due to their surface plasmon and the plasmon has important parameters for changing optical properties of the metal. We consider ternary metallic-dielectric photonic crystal (MDPC) for having large probabilities to change the optical properties of the MDPC and the photonic crystals may be changed by changing dimensionality, symmetry, lattice parameters, Filling fraction and effective refractivemore » index refractive index contrast. In this present communication, we try to show that the photonic band gap in ternary metal-dielectric photonic crystal can be significantly enlarged when air dielectric constant is considered. All the theoretical analyses are made based on the transfer matrix method together with the Drude model of metal.« less

Multi-functional metal-dielectric photonic structures

NASA Astrophysics Data System (ADS)

Smith, Kyle J.

In RF circuits and integrated photonics, it is important to effectively control an electromagnetic signal. This includes protecting of the network from high power and/or undesired signal flow, which is achieved with device functionalities such as isolation, circulation, switching, and limiting. In an attempt to develop light-weight, small-footprint, better protection devices, new designs have been sought utilizing materials that have been otherwise avoided due to some primary downside. For example, ferromagnetic metals like Iron and Cobalt, despite being powerful magnets, have been completely shunned for uses in nonreciprocal devices due to their overwhelming electric losses and high reflectivity. How could we utilize lossy materials in electromagnetic applications? In this thesis research, we design and fabricate metal-dielectric photonic structures in which metal can be highly transmissive, while the desired response (e.g., magneto-photonic response) is strongly enhanced. Moreover, the metal-dielectric structures can be designed to exhibit a sharp transition from the induced transmission to broadband opacity for oblique incidence and/or due to a tiny alteration of the photonic structure (e.g., because of nonlinearity). Thus, the photonic structures can be tailored to produce collimation and power-limiting effects. In the case of ferromagnetic metals, the metal-dielectric structure can be realized as an omnidirectional isolator passing radiation in a single direction and for a single frequency. The effectiveness of such structures will be verified in microwave measurements. Additionally, metal-dielectric structures including a nonlinear component will be shown to function as a reflective power limiter, thus providing a far superior alternative to absorptive, and often sacrificial, limiters.

Approach to Fabricate Rigid Substrate for 2.4 GHz Inverted-F Antenna Using a Room Temperature Curable Dielectric Ink on Photo and Nanopaper

NASA Astrophysics Data System (ADS)

Sowpati, A. K.; Nelo, M.; Varghese, J.; Liimatainen, H.; Visanko, M.; Sebastian, M. T.; Jantunen, H.

2018-05-01

The effect of a room temperature curable dielectric ink (ZrSiO4) printed on commercial photo paper and prepared nanopaper on the dielectric properties at 2.4 GHz are studied. In both cases, the dielectric layer decreased the relative permittivity and dielectric loss and made the flexible substrates rigid. For the nanopaper, the permittivity decreased from 4.7 to 3.57 and the loss value from 0.12 to 0.04. The measured decreases for the photo paper were from 3.12 to 2.61 and from 0.09 to 0.05, respectively. In the performance of the simulated and fabricated inverted-F antennas, the effect of the dielectric layer could be observed in the decrease of its frequency with about 130 MHz mainly due to the thicker substrate. The measured total efficiency and gain were 83% and 3.4 dB. The proposed approach could be in the future used for further development of the antenna by modification of the dielectric ink with different additives.

Calcination temperature effect on the microstructure and dielectric properties of M-type strontium hexagonal ferrites

NASA Astrophysics Data System (ADS)

Mohammed, J.; Sharma, Jyoti; Kumar, Sachin; Trudel, T. T. Carol; Srivastava, A. K.

2017-07-01

M-type hexagonal ferrites have found wide application in electronics industry due to the possibility of tuning properties such as dielectric properties. An improved dielectric property is useful in high frequency application. In this paper, we studied the effect of calcination temperature on structural and dielectric properties of Al-Mn substituted M-type strontium hexagonal ferrites with chemical composition Sr1-xAlxFe12-yMnyO19 (x=0.3 and y=0.6) synthesized by sol-gel auto-combustion method. The prepared sample was sintered at four different temperatures (T=750°C, 850°C, 950°C and 1050°C) for 5 hours. Characterisations of the synthesized samples were carried out using X-ray diffraction (XRD), impedance analyser, field emission electron microscope (FE-SEM) and energy dispersive X-ray (EDX) spectroscopy. The dielectric properties were explained on the basis of Koop's phenomenological theory and Maxwell Wagner theory. The sample calcinated at 750°C shows the highest value of dielectric constant and AC conductivity whereas that calcinated at 1050°C exhibit the lowest dielectric losses.

Approach to Fabricate Rigid Substrate for 2.4 GHz Inverted-F Antenna Using a Room Temperature Curable Dielectric Ink on Photo and Nanopaper

NASA Astrophysics Data System (ADS)

Sowpati, A. K.; Nelo, M.; Varghese, J.; Liimatainen, H.; Visanko, M.; Sebastian, M. T.; Jantunen, H.

2018-07-01

The effect of a room temperature curable dielectric ink (ZrSiO4) printed on commercial photo paper and prepared nanopaper on the dielectric properties at 2.4 GHz are studied. In both cases, the dielectric layer decreased the relative permittivity and dielectric loss and made the flexible substrates rigid. For the nanopaper, the permittivity decreased from 4.7 to 3.57 and the loss value from 0.12 to 0.04. The measured decreases for the photo paper were from 3.12 to 2.61 and from 0.09 to 0.05, respectively. In the performance of the simulated and fabricated inverted-F antennas, the effect of the dielectric layer could be observed in the decrease of its frequency with about 130 MHz mainly due to the thicker substrate. The measured total efficiency and gain were 83% and 3.4 dB. The proposed approach could be in the future used for further development of the antenna by modification of the dielectric ink with different additives.

Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects.

PubMed

Aghamohammadi, Mahdieh; Rödel, Reinhold; Zschieschang, Ute; Ocal, Carmen; Boschker, Hans; Weitz, R Thomas; Barrena, Esther; Klauk, Hagen

2015-10-21

The mechanisms behind the threshold-voltage shift in organic transistors due to functionalizing of the gate dielectric with self-assembled monolayers (SAMs) are still under debate. We address the mechanisms by which SAMs determine the threshold voltage, by analyzing whether the threshold voltage depends on the gate-dielectric capacitance. We have investigated transistors based on five oxide thicknesses and two SAMs with rather diverse chemical properties, using the benchmark organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene. Unlike several previous studies, we have found that the dependence of the threshold voltage on the gate-dielectric capacitance is completely different for the two SAMs. In transistors with an alkyl SAM, the threshold voltage does not depend on the gate-dielectric capacitance and is determined mainly by the dipolar character of the SAM, whereas in transistors with a fluoroalkyl SAM the threshold voltages exhibit a linear dependence on the inverse of the gate-dielectric capacitance. Kelvin probe force microscopy measurements indicate this behavior is attributed to an electronic coupling between the fluoroalkyl SAM and the organic semiconductor.

Effect of vanadium substitution on the dielectric and electrical conduction properties of SrTiO3 ceramics

NASA Astrophysics Data System (ADS)

Paramita Mantry, Snigdha; Yadav, Abhinav; Fahad, Mohd; Sarun, P. M.

2018-03-01

Vanadium (V) substituted SrTiO3 (SrTi1-x V x O3 and x = 0.00-0.20) ceramic powders were synthesized by conventional solid state reaction method at sintering temperature 1250 ◦C for 2 hr. The structural, surface morphology and elemental valancy of the prepared samples were studied by using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM) and X-ray photoelectron spectroscopy (XPS). The XRD analysis of SrTi1-x V x O3 confirmed the formation of single phase cubic crystal structure. The average grain size significantly increases from 0.5 μm to 7.2 μm with increasing V concentration. XPS spectrum confirms the partial reduction of Ti4+ to Ti3+ due to the doping of V5 + in SrTiO3 ceramics. The effect of V2O5 on the dielectric properties, impedance spectroscopy, Nyquist analysis and conductivity properties of SrTiO3 ceramics were investigated over a wide range of frequency (100 Hz—5 MHz) at 100 ◦C. The magnitude of dielectric constant and dielectric loss decreases with increase in frequency for all the samples. The maximum value of dielectric constant (ɛ r ˜ 500) is observed for x = 0.05 composition. The complex impedance analysis shows that the electrical conduction mechanism is mainly due to grain effect. The optimal dielectric constant (ɛ r ˜ 500) and effective capacitance (C eff = 35.80 nF) is observed for the sample with x = 0.05. Doping of donor cations lead to a drastic change in the microstructure and electrical behavior of SrTiO3 ceramics.

Flexoelectric effect in functionally graded materials: A numerical study

NASA Astrophysics Data System (ADS)

Kumar, Anuruddh; Kiran, Raj; Kumar, Rajeev; Chandra Jain, Satish; Vaish, Rahul

2018-04-01

The flexoelectric effect has been observed in a wide range of dielectric materials. However, the flexoelectric effect can only be induced using the strain gradient. Researchers have examined the flexoelectricity using non-uniform loading (cantilever type) or non-uniform shape in dielectric materials, which may be undesirable in many applications. In the present article, we demonstrate induced flexoelectricity in dielectric functionally graded materials (FGMs) due to non-uniform Youngs's modulus along the thickness. To examine flexoelectricity, Ba0.6Sr0.4TiO3 (BST) and polyvinylidene fluoride (PVDF) were used to numerically simulate the performance of FGMs. 2D simulation suggests that output voltage can drastically enhance for optimum grading index of FGMs.

Ion Structure Near a Core-Shell Dielectric Nanoparticle

NASA Astrophysics Data System (ADS)

Ma, Manman; Gan, Zecheng; Xu, Zhenli

2017-02-01

A generalized image charge formulation is proposed for the Green's function of a core-shell dielectric nanoparticle for which theoretical and simulation investigations are rarely reported due to the difficulty of resolving the dielectric heterogeneity. Based on the formulation, an efficient and accurate algorithm is developed for calculating electrostatic polarization charges of mobile ions, allowing us to study related physical systems using the Monte Carlo algorithm. The computer simulations show that a fine-tuning of the shell thickness or the ion-interface correlation strength can greatly alter electric double-layer structures and capacitances, owing to the complicated interplay between dielectric boundary effects and ion-interface correlations.

The electromagnetic radiation from simple sources in the presence of a homogeneous dielectric sphere

NASA Technical Reports Server (NTRS)

Mason, V. B.

1973-01-01

In this research, the effect of a homogeneous dielectric sphere on the electromagnetic radiation from simple sources is treated as a boundary value problem, and the solution is obtained by the technique of dyadic Green's functions. Exact representations of the electric fields in the various regions due to a source located inside, outside, or on the surface of a dielectric sphere are formulated. Particular attention is given to the effect of sphere size, source location, dielectric constant, and dielectric loss on the radiation patterns and directivity of small spheres (less than 5 wavelengths in diameter) using the Huygens' source excitation. The computed results are found to closely agree with those measured for waveguide-excited plexiglas spheres. Radiation patterns for an extended Huygens' source and for curved electric dipoles located on the sphere's surface are also presented. The resonance phenomenon associated with the dielectric sphere is studied in terms of the modal representation of the radiated fields. It is found that when the sphere is excited at certain frequencies, much of the energy is radiated into the sidelobes. The addition of a moderate amount of dielectric loss, however, quickly attenuates this resonance effect. A computer program which may be used to calculate the directivity and radiation pattern of a Huygens' source located inside or on the surface of a lossy dielectric sphere is listed.

Raman spectroscopy and dielectric Studies of multiple phase transitions in ZnO:Ni

NASA Astrophysics Data System (ADS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay; Scott, J. F.; Katiyar, R. S.

2008-03-01

We present Raman and dielectric data on Ni-doped ZnO (Zn1-xNixO) ceramics as a function of Ni concentration (x =0.03, 0.06, and 0.10) and temperature. A mode (around 130cm-1) is identified as TA(M) [J. M. Calleja and M. Cardona, Phys. Rev. B 16, 3753 (1977)] and appears due to an antiferromagnetic phase transition at low temperatures (100K) via the spin-orbit mechanism [P. Moch and C. Dugautier, Phys. Lett. A 43, 169 (1973)]. A strong dielectric anomaly occurs at around 430-460K, depending on Ni concentration, and is due to extrinsic electret effects (Ni ionic conduction) and not to a ferroelectric phase transition.

Independence of the effective dielectric constant of an electrolytic solution on the ionic distribution in the linear Poisson-Nernst-Planck model.

PubMed

Alexe-Ionescu, A L; Barbero, G; Lelidis, I

2014-08-28

We consider the influence of the spatial dependence of the ions distribution on the effective dielectric constant of an electrolytic solution. We show that in the linear version of the Poisson-Nernst-Planck model, the effective dielectric constant of the solution has to be considered independent of any ionic distribution induced by the external field. This result follows from the fact that, in the linear approximation of the Poisson-Nernst-Planck model, the redistribution of the ions in the solvent due to the external field gives rise to a variation of the dielectric constant that is of the first order in the effective potential, and therefore it has to be neglected in the Poisson's equation that relates the actual electric potential across the electrolytic cell to the bulk density of ions. The analysis is performed in the case where the electrodes are perfectly blocking and the adsorption at the electrodes is negligible, and in the absence of any ion dissociation-recombination effect.

Anomaly diffuse and dielectric relaxation in strontium doped lanthanum molybdate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xiao; Fan, Huiqing, E-mail: hqfan3@163.com; Shi, Jing

2011-12-15

Highlights: Black-Right-Pointing-Pointer The anomaly diffuse and dielectric relaxation behaviors are fitted by the Cole-Cole approach. Black-Right-Pointing-Pointer The peak in the LSMO is corresponding to different oxygen ion diffusion process. Black-Right-Pointing-Pointer We first give better explanation about the strange conductivity change caused by doping. Black-Right-Pointing-Pointer The oxygen ion diffusion is due to a combination of the dipolar relaxation and the motion of ions. -- Abstract: The dielectric properties of the La{sub 2-x}Sr{sub x}Mo{sub 2}O{sub 9-{delta}} (x = 0-0.2) ceramics were investigated in the temperature range of 300-800 K. Dielectric measurement reveals that two dielectric anomalies, associated with the oxygen ion diffusion,more » exist in frequency spectrum with x = 0.5. The broad dielectric peaks in tan {delta}({omega}) can be well fitted by a modified Cole-Cole approach. When x = 0.1, only one dielectric relaxation peak is observed, corresponding to different oxygen ion diffusion processes, as distinct from the only relaxation peak in the pure La{sub 2}Mo{sub 2}O{sub 9}. The relaxation parameters {tau}{sub 0}, the dielectric relaxation strength {Delta}, and the activation energy E{sub a} were obtained. The result of this work shows that, the conductivity change caused by doping between the two phases is due to the combination of the dipolar effects and motion of ions.« less

Nonintrinsic origin of the colossal dielectric constants in Ca Cu3 Ti4 O12

NASA Astrophysics Data System (ADS)

Lunkenheimer, P.; Fichtl, R.; Ebbinghaus, S. G.; Loidl, A.

2004-11-01

The dielectric properties of CaCu3Ti4O12 , a material showing colossal values of the dielectric constant, were investigated over a broad temperature and frequency range extending up to 1.3GHz . A detailed equivalent-circuit analysis of the results and two crucial experiments, employing different types of contacts and varying the sample thickness were performed. The results provide clear evidence that the apparently high values of the dielectric constant in CaCu3Ti4O12 are nonintrinsic and due to electrode polarization effects. The intrinsic properties of CaCu3Ti4O12 are characterized by charge transport via hopping of localized charge carriers and a relatively high dielectric constant of the order of 100.

Dielectric response of a nondegenerate electron gas in semiconductor nanocrystallites

NASA Astrophysics Data System (ADS)

van Faassen, E.

1998-12-01

We investigate the low-frequency dielectric response of a dilute electron gas in a small spherical semiconductor particle. The flow of the electrons is described by hydrodynamic equations which incorporate the electrostatic interactions between the electrons in a self-consistent fashion. In the low-frequency regime, the dielectric loss is small and proportional to the frequency, despite substantial field penetration into the semiconductor. The loss remains small even for high doping levels due to effective cancellation between field-induced drift and diffusion. The model is used to estimate the complex dielectric constant of a system of weakly conducting nanosized semiconductor particles. The most prominent manifestation of spatial dispersion is that photoinduced changes in the real and imaginary parts of the dielectric constant are positive and of comparable magnitude.

Temperature and pressure effects on capacitance probe cryogenic liquid level measurement accuracy

NASA Technical Reports Server (NTRS)

Edwards, Lawrence G.; Haberbusch, Mark

1993-01-01

The inaccuracies of liquid nitrogen and liquid hydrogen level measurements by use of a coaxial capacitance probe were investigated as a function of fluid temperatures and pressures. Significant liquid level measurement errors were found to occur due to the changes in the fluids dielectric constants which develop over the operating temperature and pressure ranges of the cryogenic storage tanks. The level measurement inaccuracies can be reduced by using fluid dielectric correction factors based on measured fluid temperatures and pressures. The errors in the corrected liquid level measurements were estimated based on the reported calibration errors of the temperature and pressure measurement systems. Experimental liquid nitrogen (LN2) and liquid hydrogen (LH2) level measurements were obtained using the calibrated capacitance probe equations and also by the dielectric constant correction factor method. The liquid levels obtained by the capacitance probe for the two methods were compared with the liquid level estimated from the fluid temperature profiles. Results show that the dielectric constant corrected liquid levels agreed within 0.5 percent of the temperature profile estimated liquid level. The uncorrected dielectric constant capacitance liquid level measurements deviated from the temperature profile level by more than 5 percent. This paper identifies the magnitude of liquid level measurement error that can occur for LN2 and LH2 fluids due to temperature and pressure effects on the dielectric constants over the tank storage conditions from 5 to 40 psia. A method of reducing the level measurement errors by using dielectric constant correction factors based on fluid temperature and pressure measurements is derived. The improved accuracy by use of the correction factors is experimentally verified by comparing liquid levels derived from fluid temperature profiles.

Electron beam irradiated polymer electrolyte film: Morphology, dielectric and AC conductivity studies

NASA Astrophysics Data System (ADS)

Yesappa, L.; Niranjana, M.; Ashokkumar, S. P.; Vijeth, H.; Ganesh, S.; Devendrappa, H.

2018-05-01

The polymer (PVdF-co-HFP: LiClO4=90:10, PHL10) electrolyte films prepared by solution casting method and studied morphology, dielectric properties and ac conductivity before and after electron beam (EB) irradiation. The polarized optical micrographs reveals size of spherulite reduced with increasing EB dose represents increase in amorphousity. The dielectric measurements were studied at different temperatures and observed increase with frequency at different temperatures upon EB irradiation. The ac conductivity increases with frequency due to effect of EB dose.

Thermally switchable dielectrics

DOEpatents

Dirk, Shawn M.; Johnson, Ross S.

2013-04-30

Precursor polymers to conjugated polymers, such as poly(phenylene vinylene), poly(poly(thiophene vinylene), poly(aniline vinylene), and poly(pyrrole vinylene), can be used as thermally switchable capacitor dielectrics that fail at a specific temperature due to the non-conjugated precursor polymer irreversibly switching from an insulator to the conjugated polymer, which serves as a bleed resistor. The precursor polymer is a good dielectric until it reaches a specific temperature determined by the stability of the leaving groups. Conjugation of the polymer backbone at high temperature effectively disables the capacitor, providing a `built-in` safety mechanism for electronic devices.

SHI induced modification in structural, optical, dielectric and thermal properties of poly ethylene oxide films

NASA Astrophysics Data System (ADS)

Patel, Gnansagar B.; Bhavsar, Shilpa; Singh, N. L.; Singh, F.; Kulriya, P. K.

2016-07-01

Poly ethylene oxide (PEO) films were synthesized by solution cast method. These self-standing films were exposed with 60 MeV C+5 ion and 100 MeV Ni+7 ion at different fluences. SHI induced effect was investigated by employing various techniques. The crystalline size decreased upon irradiation as observed from XRD analysis. FTIR analysis reveals the decrement in the peak intensity upon irradiation. Tauc's method was used to determine the optical band gap (Eg), which shows decreasing trends with increase of fluence. The dielectric properties were investigated in the frequency range 10 Hz to 10 MHz for unirradiated and irradiated films. The dielectric constant remains same for the broad-spectrum of frequency and increases at lower frequency. The dielectric loss also moderately influence as a function of frequency due to irradiation. DSC analysis validated the results of XRD. Scanning electron microscopy (SEM) reveals that there is significant change in the surface morphology due to irradiation.

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

PubMed

Li, Xuefei; Xiong, Xiong; Li, Tiaoyang; Li, Sichao; Zhang, Zhenfeng; Wu, Yanqing

2017-12-27

Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS 2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS 2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS 2 FETs from 300 to 4.3 K. Results show that Al 2 O 3 /HfO 2 could boost the mobility and drain current. Meanwhile, MoS 2 transistors with Al 2 O 3 /HfO 2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO 2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO 2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al 2 O 3 /HfO 2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.

Self-energy-modified Poisson-Nernst-Planck equations: WKB approximation and finite-difference approaches.

PubMed

Xu, Zhenli; Ma, Manman; Liu, Pei

2014-07-01

We propose a modified Poisson-Nernst-Planck (PNP) model to investigate charge transport in electrolytes of inhomogeneous dielectric environment. The model includes the ionic polarization due to the dielectric inhomogeneity and the ion-ion correlation. This is achieved by the self energy of test ions through solving a generalized Debye-Hückel (DH) equation. We develop numerical methods for the system composed of the PNP and DH equations. Particularly, toward the numerical challenge of solving the high-dimensional DH equation, we developed an analytical WKB approximation and a numerical approach based on the selective inversion of sparse matrices. The model and numerical methods are validated by simulating the charge diffusion in electrolytes between two electrodes, for which effects of dielectrics and correlation are investigated by comparing the results with the prediction by the classical PNP theory. We find that, at the length scale of the interface separation comparable to the Bjerrum length, the results of the modified equations are significantly different from the classical PNP predictions mostly due to the dielectric effect. It is also shown that when the ion self energy is in weak or mediate strength, the WKB approximation presents a high accuracy, compared to precise finite-difference results.

Silver Film Surface Modification by Ion Bombardment Decreases Surface Plasmon Resonance Absorption.

PubMed

Fryauf, David M; Diaz Leon, Juan J; Phillips, Andrew C; Kobayashi, Nobuhiko P

2017-05-10

Silver thin films covered with dielectric films serving as protective coatings are desired for telescope mirrors, but durable coatings have proved elusive. As part of an effort to develop long-lived protected-silver mirrors, silver thin films were deposited by electron beam evaporation using a physical vapor deposition system at the University of California Observatories Astronomical Coatings Lab. The silver films were later covered with a stack of dielectric films utilizing silicon nitride and titanium dioxide deposited by ion-assisted electron beam evaporation to fabricate protected mirrors. In-situ argon ion bombardment was introduced after silver deposition and prior to the deposition of dielectric films to assess its effects on the performance of the mirrors. We found that ion bombardment of the silver influenced surface morphology and reflectivity, and these effects correlated with time between silver deposition and ion bombardment. The overall reflectivity at wavelengths in the range of 350-800 nm was found to improve due to ion bombardment, which was qualitatively interpreted as a result of decreased surface plasmon resonance coupling. We suggest that the observed decrease in coupling is caused by silver grain boundary pinning due to ion bombardment suppressing silver surface diffusion, forming smoother silver-dielectric interfaces.

Charging and breakdown in amorphous dielectrics: Phenomenological modeling approach and applications

NASA Astrophysics Data System (ADS)

Palit, Sambit

Amorphous dielectrics of different thicknesses (nm to mm) are used in various applications. Low temperature processing/deposition of amorphous thin-film dielectrics often result in defect-states or electronic traps. These traps are responsible for increased leakage currents and bulk charge trapping in many associated applications. Additional defects may be generated during regular usage, leading to electrical breakdown. Increased leakage currents, charge trapping and defect generation/breakdown are important and pervasive reliability concerns in amorphous dielectrics. We first explore the issue of charge accumulation and leakage in amorphous dielectrics. Historically, charge transport in amorphous dielectrics has been presumed, depending on the dielectric thickness, to be either bulk dominated (Frenkel-Poole (FP) emission) or contact dominated (Fowler-Nordheim tunneling). We develop a comprehensive dielectric charging modeling framework which solves for the transient and steady state charge accumulation and leakage currents in an amorphous dielectric, and show that for intermediate thickness dielectrics, the conventional assumption of FP dominated current transport is incorrect, and may lead to false extraction of dielectric parameters. We propose an improved dielectric characterization methodology based on an analytical approximation of our model. Coupled with ab-initio computed defect levels, the dielectric charging model explains measured leakage currents more accurately with lesser empiricism. We study RF-MEMS capacitive switches as one of the target applications of intermediate thickness amorphous dielectrics. To achieve faster analysis and design of RF-MEMS switches in particular, and electro-mechanical actuators in general, we propose a set of fundamental scaling relationships which are independent of specific physical dimensions and material properties; the scaling relationships provide an intrinsic classification of all electro-mechanical actuators. However, RF-MEMS capacitive switches are plagued by the reliability issue of temporal shifts of actuation voltages due to dielectric charge accumulation, often resulting in failure due to membrane stiction. Using the dielectric charging model, we show that in spite of unpredictable roughness of deposited dielectrics, there are predictable shifts in actuation voltages due to dielectric charging in RF-MEMS switches. We also propose a novel non-obtrusive, non-contact, fully electronic resonance based technique to characterize charging driven actuation shifts in RF-MEMS switches which overcomes limitations in conventionally used methods. Finally, we look into the issue of defect generation and breakdown in thick polymer dielectrics. Polymer materials often face premature electrical breakdown due to high electric fields and frequencies, and exposure to ambient humidity conditions. Using a field-driven correlated defect generation model, coupled with a model for temperature rise due to dielectric heating at AC stresses, we explain measured trends in time-to-breakdown and breakdown electric fields in polymer materials. Using dielectric heating we are able to explain the observed lifetime and dielectric strength reduction with increasing dielectric thicknesses. Performing lifetime measurements after exposure to controlled humidity conditions, we find that moisture ingress into a polymer material reduces activation barriers for chain breakage and increases dielectric heating. Overall, this thesis develops a comprehensive framework of dielectric charging, leakage and degradation of insulators of different thicknesses that have broad applications in multiple technologies.

Review of Slow-Wave Structures

NASA Technical Reports Server (NTRS)

Wallett, Thomas M.; Qureshi, A. Haq

1994-01-01

The majority of recent theoretical and experimental reports published in the literature dealing with helical slow-wave structures focus on the dispersion characteristics and their effects due to the finite helix wire thickness and attenuation, dielectric loading, metal loading, and the introduction of plasma. In many papers, an effective dielectric constant is used to take into account helix wire dimensions and conductivity losses, while the propagation constant of the signal and the interaction impedance of the structure are found to depend on the surface resistivity of the helix. Also, various dielectric supporting rods are simulated by one or several uniform cylinders having an effective dielectric constant, while metal vane loading and plasma effects are incorporated in the effective dielectric constant. The papers dealing with coupled cavities and folded or loaded wave guides describe equivalent circuit models, efficiency enhancement, and the prediction of instabilities for these structures. Equivalent circuit models of various structures are found using computer software programs SUPERFISH and TOUCHSTONE. Efficiency enhancement in tubes is achieved through dynamic velocity and phase adjusted tapers using computer techniques. The stability threshold of unwanted antisymmetric and higher order modes is predicted using SOS and MAGIC codes and the dependence of higher order modes on beam conductance, section length, and effective Q of a cavity is shown.

Study on the dielectric properties of Al2O3/TiO2 sub-nanometric laminates: effect of the bottom electrode and the total thickness

NASA Astrophysics Data System (ADS)

Ben Elbahri, M.; Kahouli, A.; Mercey, B.; Lebedev, O.; Donner, W.; Lüders, U.

2018-02-01

Dielectrics based on amorphous sub-nanometric laminates of TiO2 and Al2O3 are subject to elevated dielectric losses and leakage currents, in large parts due to the extremely thin individual layer thickness chosen for the creation of the Maxwell-Wagner relaxation and therefore the high apparent dielectric constants. The optimization of performances of the laminate itself being strongly limited by this contradiction concerning its internal structure, we will show in this study that modifications of the dielectric stack of capacitors based on these sub-nanometric laminates can positively influence the dielectric losses and the leakage, as for example the nature of the electrodes, the introduction of thick insulating layers at the laminate/electrode interfaces and the modification of the total laminate thickness. The optimization of the dielectric stack leads to the demonstration of a capacitor with an apparent dielectric constant of 90, combined with low dielectric loss (tan δ) of 7 · 10-2 and with leakage currents smaller than 1  ×  10-6 A cm-2 at 10 MV m-1.

Largely enhanced dielectric properties of carbon nanotubes/polyvinylidene fluoride binary nanocomposites by loading a few boron nitride nanosheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Minhao; Zhao, Hang; He, Delong

2016-08-15

The ternary nanocomposites of boron nitride nanosheets (BNNSs)/carbon nanotubes (CNTs)/polyvinylidene fluoride (PVDF) are fabricated via a combination of solution casting and extrusion-injection processes. The effects of BNNSs on the electrical conductivity, dielectric behavior, and microstructure changes of CNTs/PVDF binary nanocomposites are systematically investigated. A low percolation value (f{sub c}) for the CNTs/PVDF binary system is obtained due to the integration of solution and melting blending procedures. Two kinds of CNTs/PVDF binary systems with various CNTs contents (f{sub CNTs}) as the matrix are discussed. The results reveal that compared with CNTs/PVDF binary systems at the same f{sub CNTs}, the ternary BNNSs/CNTs/PVDFmore » nanocomposites exhibit largely enhanced dielectric properties due to the improvement of the CNTs dispersion state and the conductive network. The dielectric constant of CNTs/PVDF binary nanocomposite with 6 vol. % CNTs (f{sub CNTs} < f{sub c}) shows a 79.59% enhancement from 49 to 88 after the incorporation of 3 vol. % BNNSs. For the other CNTs/PVDF system with 8 vol. % CNTs (f{sub CNTs} > f{sub c}), it displays a 43.32% improvement from 1325 to 1899 after the addition of 3 vol. % BNNSs. The presence of BNNSs facilitates the formation of the denser conductive network. Meanwhile, the ternary BNNSs/CNTs/PVDF systems exhibit a low dielectric loss. The adjustable dielectric properties could be obtained by employing the ternary systems due to the microstructure changes of nanocomposites.« less

Ultrahigh near infrared photoresponsive organic field-effect transistors with lead phthalocyanine/C60 heterojunction on poly(vinyl alcohol) gate dielectric.

PubMed

Sun, Lei; Zhang, Jianping; Zhao, Feiyu; Luo, Xiao; Lv, Wenli; li, Yao; Ren, Qiang; Wen, Zhanwei; Peng, Yingquan; Liu, Xingyuan

2015-05-08

Performances of photoresponsive organic field-effect transistors (photOFETs) operating in the near infrared (NIR) region utilizing SiO2 as the gate dielectric is generally low due to low carrier mobility of the channel. We report on NIR photOFETs based on lead phthalocyanine (PbPc)/C60 heterojunction with ultrahigh photoresponsivity by utilizing poly(vinyl alcohol) (PVA) as the gate dielectric. For 808 nm NIR illumination of 1.69 mW cm(-2), an ultrahigh photoresponsivity of 21 A W(-1), and an external quantum efficiency of 3230% were obtained at a gate voltage of 30 V and a drain voltage of 80 V, which are 124 times and 126 times as large as the reference device with SiO2 as the gate dielectric, respectively. The ultrahigh enhancement of photoresponsivity is resulted from the huge increase of electron mobility of C60 film grown on PVA dielectric. AFM investigations revealed that the C60 film grown on PVA is much smooth and uniform and the grain size is much larger than that grown on SiO2 dielectric, which together results in four orders of magnitude increase of the field-effect electron mobility of C60 film.

Dielectric relaxation and magnetic properties of Ti and Zn co-doped GaFeO3

NASA Astrophysics Data System (ADS)

Raies, Imen; Dulmani, Shara A.; Amami, Mongi

2018-06-01

polycrystalline GaFeO3 and Ga0.98Zn0.02Fe0.98Ti0.02O3 were prepared by solid state reaction. They showed an orthorhombic crystal structure with Pc21n space group. The magnetic transition temperature decrease due to the dilution of the magnetic interaction. A noteworthy effect of substitution of multiple elements at the Ga and Fe-sites on dielectric constant and tangent loss of GaFeO3 has been observed. Complete studies of temperature (180-400 K) and frequency (10-107 Hz) dependence of dielectric constant and impedance have provided the effect of grains and grain boundaries on the conduction mechanism and dielectric relaxation of the material. Impedance spectroscopy results in the temperature range 160-400 K have revealed a distinct conduction process at grain and grain boundaries.

Analysis of the Dielectric constant of saline-alkali soils and the effect on radar backscattering coefficient: a case study of soda alkaline saline soils in Western Jilin Province using RADARSAT-2 data.

PubMed

Li, Yang-yang; Zhao, Kai; Ren, Jian-hua; Ding, Yan-ling; Wu, Li-li

2014-01-01

Soil salinity is a global problem, especially in developing countries, which affects the environment and productivity of agriculture areas. Salt has a significant effect on the complex dielectric constant of wet soil. However, there is no suitable model to describe the variation in the backscattering coefficient due to changes in soil salinity content. The purpose of this paper is to use backscattering models to understand behaviors of the backscattering coefficient in saline soils based on the analysis of its dielectric constant. The effects of moisture and salinity on the dielectric constant by combined Dobson mixing model and seawater dielectric constant model are analyzed, and the backscattering coefficient is then simulated using the AIEM. Simultaneously, laboratory measurements were performed on ground samples. The frequency effect of the laboratory results was not the same as the simulated results. The frequency dependence of the ionic conductivity of an electrolyte solution is influenced by the ion's components. Finally, the simulated backscattering coefficients measured from the dielectric constant with the AIEM were analyzed using the extracted backscattering coefficient from the RADARSAT-2 image. The results show that RADARSAT-2 is potentially able to measure soil salinity; however, the mixed pixel problem needs to be more thoroughly considered.

Role of electron-phonon coupling in finite-temperature dielectric functions of Au, Ag, and Cu

NASA Astrophysics Data System (ADS)

Xu, Meng; Yang, Jia-Yue; Zhang, Shangyu; Liu, Linhua

2017-09-01

Realistic representation of finite temperature dielectric functions of noble metals is crucial in describing the optical properties of advancing applications in plasmonics and optical metamaterials. However, the atomistic origins of the temperature dependence of noble metals' dielectric functions still lack full explanation. In this paper, we implement electronic structure calculations as well as ellipsometry experiments to study the finite temperature dielectric functions of noble metals Au, Ag, and Cu. Theoretically, the intraband dielectric function is described by the Drude model, of which the important quantity electron lifetime is obtained by considering the electron-phonon, electron-electron, and electron-surface scattering mechanism. The electron-phonon coupling is key to determining the temperature dependence of electron lifetime and intraband dielectric function. For the interband dielectric function, it arises from the electronic interband transition. Due to the limitation of incorporating electron-phonon coupling into the interband transition scheme, the temperature dependence of the interband dielectric function is mainly determined by the thermal expansion effect. Experimentally, variable angle spectroscopic ellipsometry measures the dielectric functions of Au and Ag over the temperature range of 300-700 K and spectral range of 2-20 µm. Those experimental measurements are consistent with theoretical results and thus verify the theoretical models for the finite temperature dielectric function.

Electrical properties of lunar soil sample 15301,38

NASA Technical Reports Server (NTRS)

Olhoeft, G. R.; Frisillo, A. L.; Strangway, D. W.

1974-01-01

Electrical property measurements have been made on an Apollo 15 lunar soil sample in ultrahigh vacuum from room temperature to 827 C for the frequency spectrum from 100 Hz through 1 MHz. The dielectric constant, the total ac loss tangent, and the dc conductivity were measured. The dc conductivity showed no thermal hysteresis, but an irreversible (in vacuum) thermal effect was found in the dielectric loss tangent on heating above 700 C and during the subsequent cooling. This appears to be related to several effects associated with lunar glass above 700 C. The sample also showed characteristic low-frequency dispersion in the dielectric constant with increasing temperature, presumably due to Maxwell-Wagner intergranular effects. The dielectric properties may be fitted to a model involving a Cole-Cole frequency distribution that is relatively temperature-independent below 200 C and follows a Boltzmann temperature distribution with an activation energy of 2.5 eV above 200 C. The dc conductivity is fitted by an exponential temperature distribution and becomes the dominant loss above 700 C.

The Coulomb based magneto-electric coupling in multiferroic tunnel junctions and granular multiferroics

NASA Astrophysics Data System (ADS)

Udalov, O. G.; Beloborodov, I. S.

2018-05-01

We study magneto-electric effect in two systems: i) multiferroic tunnel junction (MFTJ) - magnetic tunnel junction with ferroelectric barrier and ii) granular multiferroic (GMF) in which ferromagnetic (FM) metallic grains embedded into ferroelectric matrix. We show that the Coulomb interaction influences the magnetic state of the system in several ways: i) through the spin-dependent part of the Coulomb interaction; ii) due to the Coulomb blockade effect suppressing electron hopping and therefore reducing magnetic coupling; and iii) through image forces and polarization screening that modify the barrier for electrons in MFTJ and GMF. We show that in the absence of spin-orbit or strain-mediated coupling magneto-electric effect appears in GMF and MFTJ. The Coulomb interaction depends on the dielectric properties of the system. For GMF it depends on the dielectric constant of FE matrix and for MFTJ on the dielectric constant of the FE barrier. Applying external electric field one can tune the dielectric constant and the Coulomb interaction. Thus, one can control magnetic state with electric field.

Effect of argon ion implantation on the electrical and dielectric properties of CR-39

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chawla, Mahak, E-mail: mahak.chawla@gmail.com; Shekhawat, Nidhi; Goyal, Meetika

2016-05-23

The objective of the present work is to study the effect of 130 keV Ar{sup +} ions on the electrical and dielectric properties of CR-39 samples at various doses 5×10{sup 14}, 1×10{sup 15} and 1×10{sup 16} Ar{sup +} cm{sup −2}. Current-Voltage (I-V characteristics) measurements have been used to study the electrical properties of virgin and Ar{sup +} implanted CR-39 specimens. The current has been found to be increased with increasing voltage as well as with increasing ion dose. The dielectric spectroscopy of these specimens has been done in the frequency range of 100 kHz-100 MHz. The dielectric constant has been found tomore » be decreasing whereas dielectric loss factor increases with increasing ion fluence. These kind of behavior observed in the implanted specimens indicate towards the formation of carbonaceous clusters due to the cross linking, chemical bond cleavage, formation of free radicals. The changes observed in the dielectric behavior have been further correlated with the structural changes observed through I-V characteristics.« less

Development of soft robots using dielectric elastomer actuators

NASA Astrophysics Data System (ADS)

Godaba, Hareesh; Wang, Yuzhe; Cao, Jiawei; Zhu, Jian

2016-04-01

Soft robots are gaining in popularity due to their unique attributes such as low weight, compliance, flexibility and diverse range in motion types. This paper illustrates soft robots and actuators which are developed using dielectric elastomer. These developments include a jellyfish robot, a worm like robot and artificial muscle actuators for jaw movement in a robotic skull. The jellyfish robot which employs a bulged dielectric elastomer membrane has been demonstrated too generate thrust and buoyant forces and can move effectively in water. The artificial muscle for jaw movement employs a pure shear configuration and has been shown to closely mimic the jaw motion while chewing or singing a song. Thee inchworm robot, powered by dielectric elastomer actuator can demonstrate stable movement in one-direction.

Effects of oxygen deficiency on the transport and dielectric properties of NdSrNbO

NASA Astrophysics Data System (ADS)

Hzez, W.; Benali, A.; Rahmouni, H.; Dhahri, E.; Khirouni, K.; Costa, B. F. O.

2018-06-01

In the present study, Nd0.7Sr0.3NbO3-y (y = 0.1, 0.15, 0.2) compounds were prepared via a solid-solid reaction route. The prepared samples were characterized by electrochemical impedance spectroscopy in order to establish the effects of temperature, frequency, and oxygen vacancies on both the transport and dielectric properties of NdSrNbO. We found that both the electrical and dielectric properties were highly sensitive to the concentration of oxygen vacancies. The conduction mechanism data were explained well according to the Mott model and adiabatic small polaronic hopping model. Electrochemical impedance spectroscopy analysis showed that one relaxation process was present in the Nd0.7Sr0.3NbO2.9 system whereas two relaxation processes were observed in the Nd0.7Sr0.3NbO2.85 and Nd0.7Sr0.3NbO2.8 systems, where the latter behavior indicated the presence of many active regions (due to the contributions of different microstructures). The temperature and frequency dependences of the dielectric constant confirmed the contributions of different polarization mechanisms. In particular, the high dielectric constant values at low frequencies and high temperatures were mainly related to the presence of different Schottky barriers, whereas the low dielectric constant values at high frequencies were essentially related to the intrinsic effect. The constant dielectric values obtained for the samples are greater than those in the NdSrFeO system, which makes them interesting materials for use in applications that require high dielectric constants.

Giant dielectric response in (Sr, Sb) codoped CaCu3Ti4O12 ceramics: A novel approach

NASA Astrophysics Data System (ADS)

Pradhan, M. K.; Rao, T. Lakshmana; Karna, Lipsarani; Dash, S.

2018-04-01

The CaCu3Ti4O12 (CCTO) remains as the best material for practical applications due to its high dielectric constant. To improve further the dielectric properties of CCTO to several orders in magnitude, a novel approach is adopted by codoping of Sr, Sb ions. The ceramic samples were fabricated by the conventional solid state route. The structure, morphology and detail dielectric properties were investigated systematically. All the samples crystalizes in a cubic symmetry with Im-3 space group. Sr substituted in Ca site can effectively suppress the grain growth, achieving a fine grained ceramic structure; however the grain size decreased slightly as Sb concentration increased further; whereas the dielectric permittivity of the ceramics increased drastically. The giant dielectric response was considered to be closely related with a reduction in the potential barrier height at grain boundaries (GBs) supported by the reduction in the activation energy for the conduction process.

Effect of crystal structure on strontium titanate thin films and their dielectric properties

NASA Astrophysics Data System (ADS)

Kampangkeaw, Satreerat

Strontium titanate (SrTiO3 or STO) has application in radio and microwave-frequency tunable capacitor devices particularly at low temperatures due to its high dielectric constant, low loss and the electric field tunability of its dielectric constant. The main goal of improving the performance in these devices is to increase the tunability and decrease the dielectric loss at the same time, especially at microwave frequencies. Thin films of STO however, show dramatic differences compared to the bulk. The dielectric constant of bulk STO increases nonlinearly from 300 at room temperature to 30000 at 4 K and the loss range is 10-3--10 -4. On the other hand. STO thin films, while showing a dielectric constant close to 300 at room temperature, typically reach a maximum between 1000 and 10000 in the 30 K to 100 K range before decreasing, and the high-loss range is 10-2--10-3. We have grown strontium titanate thin films using a pulsed laser deposition technique on substrates selected to have a small lattice mismatch between the film and substrate. Neodymium gallate (NdGaO3 or NGO) and lanthanum aluminate (LaAlO3 or LAO) substrates were good candidates due to only 1--2% mismatching. Film capacitor devices were fabricated with 25 micron gap separation. 1.5 mm total gap length and an overall 1 x 2 mm dimension using standard lithography and gold metal evaporative techniques. Their nonlinear dielectric constant and loss tangent were measured at low frequencies and also at 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position on the substrates with respect to the deposition plume axis. In the presence of DC electric fields up to +/-4 V/mum, STO films show improved dielectric tunability and low loss in regions far from the plume axis. We found that the films grown on NCO have lower dielectric loss than those on LAO due to a closer match of the NCO lattice to that of STO. We investigated the possible causes that make dielectric behavior in STO thin films different from the bulk. We characterized such film structures as lattice parameters, out-of-plane grain size, in-plane grain size, thickness, roughness, strains, and defects using ellipsometry, atomic force microscopy, and a high-resolution X-ray diffractometry. In plane grain size and percentage of defects were found to play a major role on the dielectric performance of the films.

Conductivity and dielectric behaviour of PEO-based solid nanocomposite polymer electrolytes

NASA Astrophysics Data System (ADS)

Ibrahim, Suriani; Mohd Yasin, Siti Mariah; Nee, Ng Meng; Ahmad, Roslina; Johan, Mohd Rafie

2012-03-01

In this research, thin films of poly(ethylene oxide) (PEO) blend with lithium hexafluorophosphate (LiPF) salt and ethylene carbonate (EC) as plasticiser and carbon nanotube (CNT) as filler, are prepared using solution casting method. The conductivity and dielectric response of the nanocomposite polymer electrolyte systems are studied within the broad frequency range of 5 Hz-5 MHz and within a temperature range of 298-373 K. The conductivity-temperature plots are observed to be of Arrhenius nature. The dielectric behaviour is analysed using the dielectric permittivity (ɛr and ɛi), loss tangent (tanδ) and electric modulus (Mi and Mr) of the samples. It is observed that the dielectric permittivity rises sharply towards low frequencies due to electrode polarisation effects. The maxima of the loss tangent (tanδ) shifts towards higher frequencies and the height of the peak increases with increasing temperature.

Dynamic dielectrophoresis model of multi-phase ionic fluids.

PubMed

Yan, Ying; Luo, Jing; Guo, Dan; Wen, Shizhu

2015-01-01

Ionic-based dielectrophoretic microchips have attracted significant attention due to their wide-ranging applications in electro kinetic and biological experiments. In this work, a numerical method is used to simulate the dynamic behaviors of ionic droplets in a microchannel under the effect of dielectrophoresis. When a discrete liquid dielectric is encompassed within a continuous fluid dielectric placed in an electric field, an electric force is produced due to the dielectrophoresis effect. If either or both of the fluids are ionic liquids, the magnitude and even the direction of the force will be changed because the net ionic charge induced by an electric field can affect the polarization degree of the dielectrics. However, using a dielectrophoresis model, assuming ideal dielectrics, results in significant errors. To avoid the inaccuracy caused by the model, this work incorporates the electrode kinetic equation and defines a relationship between the polarization charge and the net ionic charge. According to the simulation conditions presented herein, the electric force obtained in this work has an error exceeding 70% of the actual value if the false effect of net ionic charge is not accounted for, which would result in significant issues in the design and optimization of experimental parameters. Therefore, there is a clear motivation for developing a model adapted to ionic liquids to provide precise control for the dielectrophoresis of multi-phase ionic liquids.

The effects of strain relaxation on the dielectric properties of epitaxial ferroelectric Pb(Zr0.2Ti0.8)TiO3 thin films

NASA Astrophysics Data System (ADS)

Khan, Asif Islam; Yu, Pu; Trassin, Morgan; Lee, Michelle J.; You, Long; Salahuddin, Sayeef

2014-07-01

We study the effects of strain relaxation on the dielectric properties of epitaxial 40 nm Pb(Zr0.2Ti0.8)TiO3 (PZT) films. A significant increase in the defect and dislocation density due to strain relaxation is observed in PZT films with tetragonality c/a < 1.07 grown on SrTiO3 (001) substrates, which results in significant frequency dispersion of the dielectric constant and strong Rayleigh type behavior in those samples. This combined structural-electrical study provides a framework for investigating strain relaxation in thin films and can provide useful insights into the mechanisms of fatigue in ferroelectric materials.

A SONOS device with a separated charge trapping layer for improvement of charge injection

NASA Astrophysics Data System (ADS)

Ahn, Jae-Hyuk; Moon, Dong-Il; Ko, Seung-Won; Kim, Chang-Hoon; Kim, Jee-Yeon; Kim, Moon-Seok; Seol, Myeong-Lok; Moon, Joon-Bae; Choi, Ji-Min; Oh, Jae-Sub; Choi, Sung-Jin; Choi, Yang-Kyu

2017-03-01

A charge trapping layer that is separated from the primary gate dielectric is implemented on a FinFET SONOS structure. By virtue of the reduced effective oxide thickness of the primary gate dielectric, a strong gate-to-channel coupling is obtained and thus short-channel effects in the proposed device are effectively suppressed. Moreover, a high program/erase speed and a large shift in the threshold voltage are achieved due to the improved charge injection by the reduced effective oxide thickness. The proposed structure has potential for use in high speed flash memory.

Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, H.; Guo, X.; Pei, D.

2016-06-13

Porous SiCOH films are of great interest in semiconductor fabrication due to their low-dielectric constant properties. Post-deposition treatments using ultraviolet (UV) light on organosilicate thin films are required to decompose labile pore generators (porogens) and to ensure optimum network formation to improve the electrical and mechanical properties of low-k dielectrics. The goal of this work is to choose the best vacuum-ultraviolet photon energy in conjunction with vacuum ultraviolet (VUV) photons without the need for heating the dielectric to identify those wavelengths that will have the most beneficial effect on improving the dielectric properties and minimizing damage. VUV irradiation between 8.3more » and 8.9 eV was found to increase the hardness and elastic modulus of low-k dielectrics at room temperature. Combined with UV exposures of 6.2 eV, it was found that this “UV/VUV curing” process is improved compared with current UV curing. We show that UV/VUV curing can overcome drawbacks of UV curing and improve the properties of dielectrics more efficiently without the need for high-temperature heating of the dielectric.« less

Effect of fiber content on the thermal conductivity and dielectric constant of hair fiber reinforced epoxy composite

NASA Astrophysics Data System (ADS)

Prasad Nanda, Bishnu; Satapathy, Alok

2018-03-01

This paper reports on the dielectric and thermal properties of hair fibers reinforced epoxy composites. Hair is an important part of human body which also offers protection to the human body. It is also viewed as a biological waste which is responsible for creating environmental pollution due to its low decomposition rate. But at the same time it has unique microstructural, mechanical and thermal properties. In the present work, epoxy composites are made by solution casting method with different proportions of short hair fiber (SHF). Effects of fiber content on the thermal conductivity and dielectric constant of epoxy resin are studied. Thermal conductivities of the composites are obtained using a UnithermTM Model 2022 tester. An HIOKI-3532-50 Hi Tester Elsier Analyzer is used for measuring the capacitance of the epoxy-SHF composite, from which dielectric constant (Dk) of the composite are calculated. A reduction in thermal conductivity of the composite is noticed with the increase in wt. % of fiber. The dielectric constant value of the composites also found to be significantly affected by the fiber content.

The effect of water absorption on the dielectric properties of polyethylene hexagonal boron nitride nanocomposites

NASA Astrophysics Data System (ADS)

Ayoob, Raed; Alhabill, Fuad N.; Andritsch, Thomas; Vaughan, Alun S.

2018-02-01

The effect of water absorption on the dielectric response of polyethylene/hexagonal boron nitride nanocomposites has been studied by dielectric spectroscopy. The nanocomposites have been prepared with hBN concentrations ranging from 2 wt% to 30 wt%. Fourier transform infrared spectroscopy and thermogravimetric analysis revealed a very small amount of hydroxyl groups on the surface of hBN. Mass loss measurements showed that the nanocomposites did not absorb any water under ambient and dry conditions while there was some water absorption under wet conditions. The dielectric spectroscopy results showed a broad relaxation peak, indicative of different states of water with water shells of different thickness, which moved to higher frequencies with increasing water content. However, the dielectric losses were significantly lower than the losses reported in the literature of nanocomposites under wet conditions. In addition, all the absorbed water was successfully removed under vacuum conditions which demonstrated that the interactions between the water and the nanocomposites were very weak, due to the hydrophobic nature of the hBN surface. This is a highly useful property, when considering these materials for applications in electrical insulation.

Effect of solvents on morphology, magnetic and dielectric properties of (α-Fe2O3@SiO2) core-shell nanoparticles.

PubMed

Joshi, Deepika P; Pant, Geeta; Arora, Neha; Nainwal, Seema

2017-02-01

Present work describes the formation of α-Fe 2 O 3 @SiO 2 core shell structure by systematic layer by layer deposition of silica shell on core iron oxide nanoparticles prepared via various solvents. Sol-gel method has been used to synthesize magnetic core and the dielectric shell. The average crystallite size of iron oxide nanoparticles was calculated ∼20 nm by X-ray diffraction pattern. Morphological study by scanning electron microscopy revealed that the core-shell nanoparticles were spherical in shape and the average size of nanoparticles increased by varying solvent from methanol to ethanol to isopropanol due to different chemical structure and nature of the solvents. It was also observed that the particles prepared by solvent ethanol were more regular and homogeneous as compared to other solvents. Magnetic measurements showed the weak ferromagnetic behaviour of both core α-Fe 2 O 3 and silica-coated iron oxide nanoparticles which remained same irrespective of the solvent chosen. However, magnetization showed dependency on the types of solvent chosen due to the variation in shell thickness. At room temperature, dielectric constant and dielectric loss of silica nanoparticles for all the solvents showed decrement with the increment in frequency. Decrement in the value of dielectric constant and increment in dielectric loss was observed for silica coated iron oxide nanoparticles in comparison of pure silica, due to the presence of metallic core. Homogeneous and regular silica layer prepared by using ethanol as a solvent could serve as protecting layer to shield the magnetic behaviour of iron oxide nanoparticles as well as to provide better thermal insulation over pure α-Fe 2 O 3 nanoparticles.

Electrohydrodynamic pressure enhanced by free space charge for electrically induced structure formation with high aspect ratio.

PubMed

Tian, Hongmiao; Wang, Chunhui; Shao, Jinyou; Ding, Yucheng; Li, Xiangming

2014-10-28

Electrically induced structure formation (EISF) is an interesting and unique approach for generating a microstructured duplicate from a rheological polymer by a spatially modulated electric field induced by a patterned template. Most of the research on EISF have so far used various dielectric polymers (with an electrical conductivity smaller than 10(-10) S/m that can be considered a perfect dielectric), on which the electric field induces a Maxwell stress only due to the dipoles (or bounded charges) in the polymer molecules, leading to a structure with a small aspect ratio. This paper presents a different approach for improving the aspect ratio allowed in EISF by doping organic salt into the perfect dielectric polymer, i.e., turning the perfect dielectric into a leaky dielectric, considering the fact that the free space charges enriched in the leaky dielectric polymer can make an additional contribution to the Maxwell stress, i.e., electrohydrodynamic pressure, which is desirable for high aspect ratio structuring. Our numerical simulations and experimental tests have shown that a leaky dielectric polymer, with a small conductivity comparable to that of deionized water, can be much more effective at being electrohydrodynamically deformed into a high aspect ratio in comparison with a perfect dielectric polymer when both of them have roughly the same dielectric constant.

Optical and dielectric studies of KH2PO4 crystal influenced by organic ligand of citric acid and L-valine: A single crystal growth and comparative study

NASA Astrophysics Data System (ADS)

Anis, Mohd; Hakeem, D. A.; Muley, G. G.

In the present study pure, citric acid (CA) and L-valine (LV) doped potassium dihydrogen phosphate (KDP) crystals have been grown with the aim to investigate the nonlinear optical applications facilitated by UV-visible, third order nonlinear optical (TONLO) and dielectric properties. The structural parameters of grown crystals have been confirmed by single crystal X-ray diffraction analysis. The enhancement in optical transparency of KDP crystal due to addition of CA and LV has been examined within 200-900 nm by means of UV-visible spectral analysis. In addition, the transmittance data have been used to evaluate the effect of dopants on reflectance, refractive index and extinction coefficient of grown crystals in the visible region. The Z-scan analysis has been performed at 632.8 nm to identify the nature of photoinduced nonlinear refraction and nonlinear absorption in doped KDP crystals. The influence of π-bonded ligand of dopant CA and LV on TONLO susceptibility (χ3), refractive index (n2) and absorption coefficient (β) of KDP crystals has been evaluated to discuss laser assisted device applications. The decrease in dielectric constant and dielectric loss of KDP crystal due to addition of CA and LV has been explored using the temperature dependent dielectric studies.

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

PubMed Central

Zhao, Chun; Zhao, Ce Zhou; Lu, Qifeng; Yan, Xiaoyi; Taylor, Stephen; Chalker, Paul R.

2014-01-01

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future. PMID:28788225

Studies of Low-Current Back-Discharge in Point-Plane Geometry with Dielectric Layer

NASA Astrophysics Data System (ADS)

Jaworek, Anatol; Rajch, Eryk; Krupa, Andrzej; Czech, Tadeusz; Lackowski, Marcin

2006-01-01

The paper presents results of spectroscopic investigations of back-discharges generated in the point-plane electrode geometry in ambient air at atmospheric pressure, with the plane electrode covered with a dielectric layer. Fly ash from an electrostatic precipitator of a coal-fired power plant was used as the dielectric layer in these investigations. The discharges for positive and negative polarities of the needle electrode were studied by measuring optical emission spectra at two regions of the discharge: near the needle electrode and dielectric layer surface. The visual forms of the discharge were recorded and correlated with the current-voltage characteristics and optical emission spectra. The back-arc discharge was of particular interest in these studies due to its detrimental effects it causes in electrostatic precipitators.

Unraveling mirror properties in time-delayed quantum feedback scenarios

NASA Astrophysics Data System (ADS)

Faulstich, Fabian M.; Kraft, Manuel; Carmele, Alexander

2018-06-01

We derive in the Heisenberg picture a widely used phenomenological coupling element to treat feedback effects in quantum optical platforms. Our derivation is based on a microscopic Hamiltonian, which describes the mirror-emitter dynamics based on a dielectric, a mediating fully quantized electromagnetic field and a single two-level system in front of the dielectric. The dielectric is modelled as a system of identical two-state atoms. The Heisenberg equation yields a system of describing differential operator equations, which we solve in the Weisskopf-Wigner limit. Due to a finite round-trip time between emitter and dielectric, we yield delay differential operator equations. Our derivation motivates and justifies the typical phenomenologicalassumed coupling element and allows, furthermore, a generalization to a variety of mirrors, such as dissipative mirrors or mirrors with gain dynamics.

Giant plasmonic mode splitting in THz metamaterials mediated by coupling with Lorentz phonon mode

NASA Astrophysics Data System (ADS)

Yu, Leilei; Huang, Yuanyuan; Liu, Changji; Hu, Fangrong; Jin, Yanping; Yan, Yi; Xu, Xinlong

2018-04-01

Giant plasmonic mode splitting has been observed in THz metamaterials due to the mediation by the Lorentz phonon dielectric material. This splitting mode is confirmed by the surface current distribution, indicating that plasmonic modes behave like dipole resonances, while the phonon mode behaves like multipole resonance due to coupling. The splitting of the plasmonic modes demonstrates an anti-crossing behavior with the change in Lorentz central frequency, which suggests that there is energy redistribution between plasmon and phonon modes. Similar to the Stark effect, the splitting frequency difference increases with the increasing direct current dielectric function. We also propose an interaction Hamiltonian to understand the physical mechanism of the plasmonic splitting. Furthermore, the splitting is convincible for small Lorentz dielectrics such as sugar and amino acid in the THz region, which could be used for biomolecular sensing applications.

Enhancement of Raman scattering in dielectric nanostructures with electric and magnetic Mie resonances

NASA Astrophysics Data System (ADS)

Frizyuk, Kristina; Hasan, Mehedi; Krasnok, Alex; Alú, Andrea; Petrov, Mihail

2018-02-01

Resonantly enhanced Raman scattering in dielectric nanostructures has been recently proven to be an efficient tool for nanothermometry and for the experimental determination of their mode composition. In this paper we develop a rigorous analytical theory based on the Green's function approach to calculate the Raman emission from crystalline high-index dielectric nanoparticles. As an example, we consider silicon nanoparticles which have a strong Raman response due to active optical phonon modes. We relate enhancement of Raman signal emission to the Purcell effect due to the excitation of Mie modes inside the nanoparticles. We also employ our numerical approach to calculate inelastic Raman emission in more sophisticated geometries, which do not allow a straightforward analytical form of the Green's function. The Raman response from a silicon nanodisk has been analyzed with the proposed method, and the contribution of various Mie modes has been revealed.

Structural and dielectric properties of CTAB modified ZrO2 nanoparticles

NASA Astrophysics Data System (ADS)

Sidhu, Gaganpreet Kaur; Tripathi, S. K.; Kumar, Rajesh

2016-05-01

Zirconia (ZrO2) has been considered as one of the most investigated materials among various metal oxides due its outstanding dielectric properties and ionic conduction properties, which is mainly due to its high oxygen ion conduction. ZrO2 nanoparticles were synthesized using surfactant (CTAB) to study the variation of its dielectric behavior at room temperature. Surfactants form a unique class of chemical compounds, because of their remarkable ability to influence the properties of surfaces and interfaces of nanostructures. The dielectric properties of prepared nanoparticles were studied using LCR meter.

Shaping the photoluminescence from gold nanoshells by cavity plasmons in dielectric-metal core-shell resonators

NASA Astrophysics Data System (ADS)

Sun, Ren; Wan, Mingjie; Wu, Wenyang; Gu, Ping; Chen, Zhuo; Wang, Zhenlin

2016-08-01

We report experimental investigation of the photoluminescence (PL) generated from the gold nanoshells of the dielectric-metal core-shell resonators (DMCSR) that support multipolar electric and magnetic based cavity plasmon resonances. Significantly enhanced and modulated PL spectrum is observed. By comparing the experimental results with analytical Mie calculations, we are able to demonstrate that the observed reshaping effects are due to the excitations of those narrow-band cavity plasmon resonances. We also present that the variation on the dielectric core size allows for tuning the cavity plasmon resonance wavelengths and thus the peak positions of the PL spectrum.

The Electromagnetic and Mechanical Properties of Structural Composites: A Theoretical and Experimental Design Study

DTIC Science & Technology

2014-08-22

higher frequencies due to weaves with smaller unit cells. A second predicts the dielectric properties of unidirectional composite fabrics and laminates ...effective dielectric properties of composite laminates within the X- band (8-12 GHz). The circuit analog method becomes less accurate as the...architectures and to multilayered laminates . In this project, experimental validation from 4-50 GHz is provided for single layers of dry structural grade

Giant dielectric constant in CaCu3Ti4O12 nanoceramics

NASA Astrophysics Data System (ADS)

Ahmad, Mohamad M.

2013-06-01

Nanoceramics of CaCu3Ti4O12 (CCTO) were synthesized by mechanosynthesis and spark plasma sintering with grain size of 150-200 nm. Giant dielectric constant properties are observed in the CCTO nanoceramics due to internal barrier layer capacitance (IBLC) effects. Impedance spectroscopy data suggest that the presence of resistive grain boundaries in addition to resistive domain boundaries is the origin of the IBLCs in CCTO nanoceramics.

Maxwell-Wagner effect in hexagonal BaTiO3 single crystals grown by containerless processing

NASA Astrophysics Data System (ADS)

Yu, Jianding; Paradis, Paul-François; Ishikawa, Takehiko; Yoda, Shinichi

2004-10-01

Oxygen-deficient hexagonal BaTiO3 single crystals, with dielectric constant ε '˜105 and loss component tan δ ˜0.13 at room temperature and a linear temperature dependence of ε' in the range 70-100K, was analyzed by impedance spectroscopy analysis. Two capacitors, bulk and interfacial boundary layer, were observed, and the colossal dielectric constant was mainly dominated by the interfacial boundary layers due to Maxwell-Wagner effect. After annealing the oxygen-deficient hexagonal BaTiO3 at 663K, the ε ' and tanδ became, respectively, 2×104 and 0.07 at room temperature. This work showed an important technological implication as annealing at lower temperatures would help to obtain materials with tailored dielectric properties.

Improved flexoelectricity in PVDF/barium strontium titanate (BST) nanocomposites

NASA Astrophysics Data System (ADS)

Hu, Xinping; Zhou, Yang; Liu, Jie; Chu, Baojin

2018-04-01

The flexoelectric effect of polymers is normally much weaker than that of ferroelectric oxides. In order to improve the flexoelectric response of the poly(vinylidene fluoride) (PVDF) ferroelectric polymer, PVDF/Ba0.67Si0.33TiO3 (BST) nanocomposites were fabricated. BST nanofibers were prepared by the electrospinning method, and the fibers were further surface modified with H2O2 to achieve a stronger interfacial interaction between the fibers and polymer matrix. Due to the high dielectric properties and strong flexoelectric effect of the BST, both dielectric constant and flexoelectric response of the composite with 25 vol. % surface modified BST are 3-4 times higher than those of PVDF. The dependence of the dielectric constant and the flexoelectric coefficient on the composition of the nanocomposites can be fitted by the empirical Yamada model, and the dielectric constant and the flexoelectric coefficient are correlated by a linear relationship. This study provides an approach to enhance the flexoelectric response of PVDF-based polymers.

Nonvolatile memory characteristics of organic thin film transistors using poly(2-hydroxyethyl methacrylate)-based polymer multilayer dielectric

NASA Astrophysics Data System (ADS)

Chen, Ying-Chih; Su, Yan-Kuin; Yu, Hsin-Chieh; Huang, Chun-Yuan; Huang, Tsung-Syun

2011-10-01

A wide hysteresis width characteristic (memory window) was observed in the organic thin film transistors (OTFTs) using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer multilayers. In this study, a strong memory effect was also found in the pentacene-based OTFTs and the electric characteristics were improved by introducing PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA trilayer to replace the conventional PHEMA monolayer or PMMA/PHEMA and PHEMA/PMMA bilayer as the dielectric layers of OTFTs. The memory effect was originated from the electron trapping and slow polarization of the dielectrics. The hydroxyl (-OH) groups inside the polymer dielectric were the main charge storage sites of the electrons. This charge-storage phenomenon could lead to a wide flat-band voltage shift (memory window, △VFB = 22 V) which is essential for the OTFTs' memory-related applications. Moreover, the fabricated transistors also exhibited significant switchable channel current due to the charge-storage and slow charge relaxation.

Influence of the Coulomb interaction on the exchange coupling in granular magnets.

PubMed

Udalov, O G; Beloborodov, I S

2017-04-20

We develop a theory of the exchange interaction between ferromagnetic (FM) metallic grains embedded into insulating matrix by taking into account the Coulomb blockade effects. For bulk ferromagnets separated by the insulating layer the exchange interaction strongly depends on the height and thickness of the tunneling barrier created by the insulator. We show that for FM grains embedded into insulating matrix the exchange coupling additionally depends on the dielectric properties of this matrix due to the Coulomb blockade effects. In particular, the FM coupling decreases with decreasing the dielectric permittivity of insulating matrix. We find that the change in the exchange interaction due to the Coulomb blockade effects can be a few tens of percent. Also, we study dependence of the intergrain exchange interaction on the grain size and other parameters of the system.

Effect of temperature, high pressure and freezing/thawing of dry-cured ham slices on dielectric time domain reflectometry response.

PubMed

Rubio-Celorio, Marc; Garcia-Gil, Núria; Gou, Pere; Arnau, Jacint; Fulladosa, Elena

2015-02-01

Dielectric Time Domain Reflectometry (TDR) is a useful technique for the characterization and classification of dry-cured ham according to its composition. However, changes in the behavior of dielectric properties may occur depending on environmental factors and processing. The effect of temperature, high pressure (HP) and freezing/thawing of dry-cured ham slices on the obtained TDR curves and on the predictions of salt and water contents when using previously developed predictive models, was evaluated in three independent experiments. The results showed that at temperatures below 20 °C there is an increase of the predicted salt content error, being more important in samples with higher water content. HP treatment caused a decrease of the reflected signal intensity due to the major mobility of available ions promoting an increase of the predicted salt content. Freezing/thawing treatment caused an increase of the reflected signal intensity due to the microstructural damages and the loss of water and ions, promoting a decrease of the predicted salt content.

Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

NASA Astrophysics Data System (ADS)

Scott, Ethan A.; Gaskins, John T.; King, Sean W.; Hopkins, Patrick E.

2018-05-01

The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has allowed for their widespread use in a swath of optical, optoelectronic, and electronic devices, including integration into CMOS compatible platforms. As the thickness of these dielectric layers is reduced, the interfacial thermal resistance can dictate the overall thermal resistance of the material stack compared to the resistance due to the finite dielectric layer thickness. Time domain thermoreflectance is used to interrogate both the thermal conductivity and the thermal boundary resistance of aluminum oxide, hafnium oxide, and titanium oxide films on silicon. We calculate a representative design map of effective thermal resistances, including those of the dielectric layers and boundary resistances, as a function of dielectric layer thickness, which will be of great importance in predicting the thermal resistances of current and future devices.

Self-consistent field model for strong electrostatic correlations and inhomogeneous dielectric media.

PubMed

Ma, Manman; Xu, Zhenli

2014-12-28

Electrostatic correlations and variable permittivity of electrolytes are essential for exploring many chemical and physical properties of interfaces in aqueous solutions. We propose a continuum electrostatic model for the treatment of these effects in the framework of the self-consistent field theory. The model incorporates a space- or field-dependent dielectric permittivity and an excluded ion-size effect for the correlation energy. This results in a self-energy modified Poisson-Nernst-Planck or Poisson-Boltzmann equation together with state equations for the self energy and the dielectric function. We show that the ionic size is of significant importance in predicting a finite self energy for an ion in an inhomogeneous medium. Asymptotic approximation is proposed for the solution of a generalized Debye-Hückel equation, which has been shown to capture the ionic correlation and dielectric self energy. Through simulating ionic distribution surrounding a macroion, the modified self-consistent field model is shown to agree with particle-based Monte Carlo simulations. Numerical results for symmetric and asymmetric electrolytes demonstrate that the model is able to predict the charge inversion at high correlation regime in the presence of multivalent interfacial ions which is beyond the mean-field theory and also show strong effect to double layer structure due to the space- or field-dependent dielectric permittivity.

Effect of Powder-Suspended Dielectric on the EDM Characteristics of Inconel 625

NASA Astrophysics Data System (ADS)

Talla, Gangadharudu; Gangopadhyay, S.; Biswas, C. K.

2016-02-01

The current work attempts to establish the criteria for powder material selection by investigating the influence of various powder-suspended dielectrics and machining parameters on various EDM characteristics of Inconel 625 (a nickel-based super alloy) which is nowadays regularly used in aerospace, chemical, and marine industries. The powders include aluminum (Al), graphite, and silicon (Si) that have significant variation in their thermo-physical characteristics. Results showed that powder properties like electrical conductivity, thermal conductivity, density, and hardness play a significant role in changing the machining performance and the quality of the machined surface. Among the three powders, highest material removal rate was observed for graphite powder due to its high electrical and thermal conductivities. Best surface finish and least radial overcut (ROC) were attained using Si powder. Maximum microhardness was found for Si due to its low thermal conductivity and high hardness. It is followed by graphite and aluminum powders. Addition of powder to the dielectric has increased the crater diameter due to expansion of plasma channel. Powder-mixed EDM (PMEDM) was also effective in lowering the density of surface cracks with least number of cracks obtained with graphite powder. X-ray diffraction analysis indicated possible formation of metal carbides along with grain growth phenomenon of Inconel 625 after PMEDM.

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

NASA Astrophysics Data System (ADS)

Kim, Si Joon; Mohan, Jaidah; Lee, Jaebeom; Lee, Joy S.; Lucero, Antonio T.; Young, Chadwin D.; Colombo, Luigi; Summerfelt, Scott R.; San, Tamer; Kim, Jiyoung

2018-04-01

We report on the effect of the Hf0.5Zr0.5O2 (HZO) film thickness on the ferroelectric and dielectric properties using pulse write/read measurements. HZO films of thicknesses ranging from 5 to 20 nm were annealed at 400 °C for 1 min in a nitrogen ambient to be compatible with the back-end of the line thermal budget. As the HZO film thickness decreases, low-voltage operation (1.0 V or less) can be achieved without the dead layer effect, although switching polarization (Psw) tends to decrease due to the smaller grain size. Meanwhile, for 20-nm-thick HZO films prepared under the identical stress (similar TiN top electrode thickness and thermal budget), the Psw and dielectric constant are reduced because of additional monoclinic phase formation.

Effects of Interphase Modification and Biaxial Orientation on Dielectric Properties of Poly(ethylene terephthalate)/Poly(vinylidene fluoride-co-hexafluoropropylene) Multilayer Films.

PubMed

Yin, Kezhen; Zhou, Zheng; Schuele, Donald E; Wolak, Mason; Zhu, Lei; Baer, Eric

2016-06-01

Recently, poly(vinylidene fluoride) (PVDF)-based multilayer films have demonstrated enhanced dielectric properties, combining high energy density and high dielectric breakdown strength from the component polymers. In this work, further enhanced dielectric properties were achieved through interface/interphase modulation and biaxial orientation for the poly(ethylene terephthalate)/poly(methyl methacrylate)/poly(vinylidene fluoride-co-hexafluoropropylene) [PET/PMMA/P(VDF-HFP)] three-component multilayer films. Because PMMA is miscible with P(VDF-HFP) and compatible with PET, the interfacial adhesion between PET and P(VDF-HFP) layers should be improved. Biaxial stretching of the as-extruded multilayer films induced formation of highly oriented fibrillar crystals in both P(VDF-HFP) and PET, resulting in improved dielectric properties with respect to the unstretched films. First, the parallel orientation of PVDF crystals reduced the dielectric loss from the αc relaxation in α crystals. Second, biaxial stretching constrained the amorphous phase in P(VDF-HFP) and thus the migrational loss from impurity ions was reduced. Third, biaxial stretching induced a significant amount of rigid amorphous phase in PET, further enhancing the breakdown strength of multilayer films. Due to the synergistic effects of improved interfacial adhesion and biaxial orientation, the PET/PMMA/P(VDF-HFP) 65-layer films with 8 vol % PMMA exhibited optimal dielectric properties with an energy density of 17.4 J/cm(3) at breakdown and the lowest dielectric loss. These three-component multilayer films are promising for future high-energy-density film capacitor applications.

Effect of surfactant and mineralizer on the dielectric properties of zirconia nanocrsytals

NASA Astrophysics Data System (ADS)

Maheswari, A. Uma; Mohan, Sreedevi R.; Sivakumar, M.

2018-01-01

The combined effect of surfactants (PVP/CTAB) and alkaline mineralizers (NaOH/NH4OH) on dielectric properties of zirconia nanocrystals is analyzed. It is found that, the stabilization of zirconia tetramers by surfactants and the rate of hydroxyl ions released by alkaline mineralizers have significant impact on the dielectric properties of nanocrystals. The PVP capped tetramers form highly conducting grains with insulating boundaries, whereas the grains of CTAB capped tetramers are highly insulating with conducting grain boundaries, as revealed by Nyquist plots. Consequently, the space charge polarization would be quite large in highly conducting grains resulting in higher dielectric constant values at lower frequencies. The higher dielectric constant of PVP capped nanocrystals is due to greater tetragonal coordination of 3d5/2 and 3d3/2 electrons of Zr4+ ions than that of CTAB capped nanocrystals. Further, the surface oxygen vacancies of PVP samples are higher, resulting in a high space charge polarization. The ESR signal corresponding to F+ centers appears stronger for PVP/NH4OH nanocrystals. Moreover, the larger ESR line width of PVP/NH4OH nanocrystals corresponding to more oxygen vacancies is in accordance with the inference attained from the XPS analysis.

A Combined Model of Charging of the Surface and Bulk of a Dielectric Target by Electrons with the Energies 10-30 keV

NASA Astrophysics Data System (ADS)

Zykov, V. M.; Neiman, D. A.

2018-04-01

A physico-mathematical model of the processes of radiation-induced charging of dielectric materials with open surfaces, irradiated with monoenergetic electrons in the energy range 10-30 keV, is described. The model takes into account the relationship between the processes of surface and bulk charging for the given conditions of the experimental design, which accounts for the effect of anomalously long charging of dielectrics after the incident energy of primary electrons during charging is reduced to below the second critical energy for the secondary electronic emission coefficient. The initial fast phase of charging a high-resistivity dielectric material (Al2O3) is investigated. It is shown that as the incident electron energy is approaching the second critical energy during charging, the secondary electronic emission is partially suppressed due to negative charging of the open surface of the dielectric and formation of a near-surface inversion electrical field retarding the electronic emission yield.

Tunable Supermode Dielectric Resonators for Axion Dark-Matter Haloscopes

NASA Astrophysics Data System (ADS)

McAllister, Ben T.; Flower, Graeme; Tobar, Lucas E.; Tobar, Michael E.

2018-01-01

We present frequency-tuning mechanisms for dielectric resonators, which undergo "supermode" interactions as they tune. The tunable schemes are based on dielectric materials strategically placed inside traditional cylindrical resonant cavities, necessarily operating in transverse-magnetic modes for use in axion haloscopes. The first technique is based on multiple dielectric disks with radii smaller than that of the cavity. The second scheme relies on hollow dielectric cylinders similar to a Bragg resonator, but with a different location and dimension. Specifically, we engineer a significant increase in form factor for the TM030 mode utilizing a variation of a distributed Bragg reflector resonator. Additionally, we demonstrate an application of traditional distributed Bragg reflectors in TM modes which may be applied to a haloscope. Theoretical and experimental results are presented showing an increase in Q factor and tunability due to the supermode effect. The TM030 ring-resonator mode offers a between 1 and 2-order-of-magnitude improvement in axion sensitivity over current conventional cavity systems and will be employed in the forthcoming ORGAN experiment.

Theoretical investigation of dielectric corona pre-ionization TEA nitrogen laser based on transmission line method

NASA Astrophysics Data System (ADS)

Bahrampour, Alireza; Fallah, Robabeh; Ganjovi, Alireza A.; Bahrampour, Abolfazl

2007-07-01

This paper models the dielectric corona pre-ionization, capacitor transfer type of flat-plane transmission line traveling wave transverse excited atmospheric pressure nitrogen laser by a non-linear lumped RLC electric circuit. The flat-plane transmission line and the pre-ionizer dielectric are modeled by a lumped linear RLC and time-dependent non-linear RC circuit, respectively. The main discharge region is considered as a time-dependent non-linear RLC circuit where its resistance value is also depends on the radiated pre-ionization ultra violet (UV) intensity. The UV radiation is radiated by the resistance due to the surface plasma on the pre-ionizer dielectric. The theoretical predictions are in a very good agreement with the experimental observations. The electric circuit equations (including the ionization rate equations), the equations of laser levels population densities and propagation equation of laser intensities, are solved numerically. As a result, the effects of pre-ionizer dielectric parameters on the electrical behavior and output laser intensity are obtained.

Raman effect, structural and dielectric properties of sol-gel synthesized polycrystalline GaFe{sub 1-x}Zr{sub x}O{sub 3} (0≤x≤0.15)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Rajeev, E-mail: rajeevgiitk@gmail.com; Mall, Ashish Kumar; Gupta, Rajeev

2016-05-23

Polycrystalline ceramic samples of Zirconium (Zr)-doped GaFeO{sub 3} (GaFe{sub 1-x}Zr{sub x}O{sub 3}) were studied using powder X-ray diffraction, complex impedance spectroscopy and Raman spectroscopic measurements to understand the effect of Zr doping on the structural and dielectric properties. The samples with varying Zr content were prepared by Sol-Gel method. X-ray data analysis confirmed the formation of single phase material without formation of any secondary phases and all are crystallized in Pc2{sub 1}n orthorhombic symmetry. Rietveld refinement of the X-ray data suggested an increase in the lattice constants due to size effect and decreases on x = 0.15 due to themore » effect of change in interplanner spacing. Impedance studies on the samples showed that the dielectric constant increases while loss tangent decrease as the Zr content increases. Raman scattering on GaFe{sub 1-x}Zr{sub x}O{sub 3} (x = 0, 0.05, 0.10, & 0.15) used to understand the composition dependence on phonon modes at room temperature. On Zr doping, Raman modes frequencies shifts to lower energies consistent with the X-ray data.« less

Multipactor susceptibility on a dielectric with two carrier frequencies

NASA Astrophysics Data System (ADS)

Iqbal, Asif; Verboncoeur, John; Zhang, Peng

2018-04-01

This work investigates multipactor discharge on a single dielectric surface with two carrier frequencies of an rf electric field. We use Monte Carlo simulations and analytical calculations to obtain susceptibility diagrams in terms of the rf electric field and normal electric field due to the residual charge on the dielectric. It is found that in contrast to the single frequency case, in general, the presence of a second carrier frequency of the rf electric field increases the threshold of the magnitude of the rf electric field to initiate multipactor. The effects of the relative strength and phase, and the frequency separation of the two carrier frequencies are examined. The conditions to minimize mulitpactor are derived.

Structural, magnetic and spectral properties of Gd and Dy co-doped dielectrically modified Co-Ni (Ni0.4Co0.6Fe2O4) ferrites

NASA Astrophysics Data System (ADS)

Ditta, Allah; Khan, Muhammad Azhar; Junaid, Muhammad; Khalil, R. M. Arif; Warsi, Muhammad Farooq

2017-02-01

Gadolinium (Gd) and Dysprosium (Dy) co-doped Ni-Co (Ni0.4Co0.6Fe2O4) ferrites were prepared by micro-emulsion route. X-ray diffraction (XRD) analysis indicated the development of cubic spinel structure. The lattice parameter and X-ray density were found to increase from 8.24 to 8.31 Å and 5.57 to 5.91 (gm/cm3) respectively as the Gd-Dy contents increased in nickel-cobalt ferrites. The crystallite size calculated from the Scherrer's formula exhibited the formation of nanocrystalline ferrites (13-26 nm). Two foremost absorption bands observed in FTIR spectra within 400 cm-1 (υ2) to 600 cm-1 (υ1) which correspond to stretching vibrations of tetrahedral and octahedral complexes respectively. The dielectric constant (ε) and dielectric loss (tanδ) were decreased by the optimization of frequency and abrupt decrease in the low frequency region and higher values in the high frequency region were observed. The dielectric dispersion was due to rapid decrease of dielectric constant in the low frequency region. This variation of dielectric dispersion was explicated in the light of space charge polarization model of Maxwell-Wagner. The dielectric loss occurs in these ferrites due to electron hopping and defects in the dipoles. The electron hopping was possible at low frequency range but at higher frequency the dielectric loss was decreased with the decrease of electron hopping. Magnetic properties were observed by measuring M-H loops. Due to low dielectric loss and dielectric constant these materials were appropriate in the fabrication of switching and memory storage devices.

Influence of Zn doping on structural, optical and dielectric properties of LaFeO3

NASA Astrophysics Data System (ADS)

Manzoor, Samiya; Husain, Shahid

2018-05-01

The effect of Zn doping on structural, optical and dielectric properties of nano-crystalline LaFe1‑xZnxO3 (0.0 ≤ x ≤ 0.3) samples have been investigated. These samples are synthesized using conventional solid state reaction route. X-ray diffraction patterns with Rietveld analysis confirm the single phase nature of samples. Further, the sample formation has been confirmed by FTIR spectroscopy. All the samples are formed in orthorhombic crystal symmetry with Pbnm space group. The average crystallite sizes, calculated from the Scherer’s formula, lie in the range below 50 nm. Rietveld refinement technique is used to determine lattice parameters, bond lengths and unit cell volume. Williamson-Hall analysis has been performed to calculate the crystallite size and lattice strain. Crystallite sizes are found to be of nanometer range while the strain is of the order of 10‑3. Zn doping leads to the expansion of volume due to the tensile strain. Optical bandgap has been determined from Kubelka-Munk function using Tauc’s relation. Zinc doping in LaFeO3 leads to decrease in optical bandgap. Dielectric constant as a function of frequency is measured in the frequency range of 75 kHz–5 MHz. The dielectric behavior has been investigated by analyzing ‘universal dielectric response’ (UDR) model. The dielectric constant (ε‧) shows colossal value with Zn doping in the whole frequency range. However, the imaginary part (ε″) shows relaxational behavior which may be attributed to the strong correlation that exists between conduction mechanism and dielectric behavior in ferrites. Cole-Cole analysis has been done that confirms the dielectric material does not follow the ideal Debye theory but shows distribution of relaxation times. The a.c conductivity increases with frequency and with Zn doping due to the increased polaron hopping.

Effect of organo clay on curing, mechanical and dielectric properties of NR/SBR blends

NASA Astrophysics Data System (ADS)

Ravikumar, K.; Joseph, Reji; Ravichandran, K.

2018-04-01

Natural rubber (NR) and styrene butadiene rubber (SBR) based elastomeric blends reinforced with organically modified Sodium bentonite clay were prepared by two roll mills. Vulcanization parameters such as minimum and maximum torque values scorch and cure times are measured by Oscillating Disc Rheometer. Mechanical properties such as Tensile strength, modulus at 100%, 200% and 300% elongation and elongation at break and Hardness were measured by Universal testing machine and Durometer Shore A hardness meter respectively. Dielectric properties such as dielectric constant (ε’), dissipation factor (tanδ) and volume resistivity (ρv) were measured at room temperature. The curing studies show that torque values are increasing in NR/SBR blends by increase NR content. The scorch and optimum cure time in NR/SBR blends reinforced organo modified clay was found through increase in the SBR content. This may be due to better processing safety of the NR/SBR blends reinforced with organo modified clay. Mechanical properties show that addition of SBR in blends, tensile strength, elongation modulus increases, but 100% modulus slightly increases and no change was observed in Hardness. Dielectric studies show that dielectric constant of NR and SBR rubbers are almost same, it may due to their non-polar nature. But addition of SBR in NR/SBR blend, dielectric constant gradually increases and maximum value observed at 50/50 ratio. But no considerable change was observed in dissipation factor. Frequency dependant resistivity shows that volume resistivity was not changed with respect to frequency up to 3.5 kHz and beyond that the frequency dependence resistivity was found.

Effect of Logarithmic and Linear Frequency Scales on Parametric Modelling of Tissue Dielectric Data.

PubMed

Salahuddin, Saqib; Porter, Emily; Meaney, Paul M; O'Halloran, Martin

2017-02-01

The dielectric properties of biological tissues have been studied widely over the past half-century. These properties are used in a vast array of applications, from determining the safety of wireless telecommunication devices to the design and optimisation of medical devices. The frequency-dependent dielectric properties are represented in closed-form parametric models, such as the Cole-Cole model, for use in numerical simulations which examine the interaction of electromagnetic (EM) fields with the human body. In general, the accuracy of EM simulations depends upon the accuracy of the tissue dielectric models. Typically, dielectric properties are measured using a linear frequency scale; however, use of the logarithmic scale has been suggested historically to be more biologically descriptive. Thus, the aim of this paper is to quantitatively compare the Cole-Cole fitting of broadband tissue dielectric measurements collected with both linear and logarithmic frequency scales. In this way, we can determine if appropriate choice of scale can minimise the fit error and thus reduce the overall error in simulations. Using a well-established fundamental statistical framework, the results of the fitting for both scales are quantified. It is found that commonly used performance metrics, such as the average fractional error, are unable to examine the effect of frequency scale on the fitting results due to the averaging effect that obscures large localised errors. This work demonstrates that the broadband fit for these tissues is quantitatively improved when the given data is measured with a logarithmic frequency scale rather than a linear scale, underscoring the importance of frequency scale selection in accurate wideband dielectric modelling of human tissues.

Effect of Logarithmic and Linear Frequency Scales on Parametric Modelling of Tissue Dielectric Data

PubMed Central

Salahuddin, Saqib; Porter, Emily; Meaney, Paul M.; O’Halloran, Martin

2016-01-01

The dielectric properties of biological tissues have been studied widely over the past half-century. These properties are used in a vast array of applications, from determining the safety of wireless telecommunication devices to the design and optimisation of medical devices. The frequency-dependent dielectric properties are represented in closed-form parametric models, such as the Cole-Cole model, for use in numerical simulations which examine the interaction of electromagnetic (EM) fields with the human body. In general, the accuracy of EM simulations depends upon the accuracy of the tissue dielectric models. Typically, dielectric properties are measured using a linear frequency scale; however, use of the logarithmic scale has been suggested historically to be more biologically descriptive. Thus, the aim of this paper is to quantitatively compare the Cole-Cole fitting of broadband tissue dielectric measurements collected with both linear and logarithmic frequency scales. In this way, we can determine if appropriate choice of scale can minimise the fit error and thus reduce the overall error in simulations. Using a well-established fundamental statistical framework, the results of the fitting for both scales are quantified. It is found that commonly used performance metrics, such as the average fractional error, are unable to examine the effect of frequency scale on the fitting results due to the averaging effect that obscures large localised errors. This work demonstrates that the broadband fit for these tissues is quantitatively improved when the given data is measured with a logarithmic frequency scale rather than a linear scale, underscoring the importance of frequency scale selection in accurate wideband dielectric modelling of human tissues. PMID:28191324

Multi-layer coating of SiO2 nanoparticles to enhance light absorption by Si solar cells

NASA Astrophysics Data System (ADS)

Nam, Yoon-Ho; Um, Han-Don; Park, Kwang-Tae; Shin, Sun-Mi; Baek, Jong-Wook; Park, Min-Joon; Jung, Jin-Young; Zhou, Keya; Jee, Sang-Won; Guo, Zhongyi; Lee, Jung-Ho

2012-06-01

We found that multi-layer coating of a Si substrate with SiO2 dielectric nanoparticles (NPs) was an effective method to suppress light reflection by silicon solar cells. To suppress light reflection, two conditions are required for the coating: 1) The difference of refractive indexes between air and Si should be alleviated, and 2) the quarter-wavelength antireflection condition should be satisfied while avoiding intrinsic absorption loss. Light reflection was reduced due to destructive interference at certain wavelengths that depended on the layer thickness. For the same thickness dielectric layer, smaller NPs enhanced antireflectance more than larger NPs due to a decrease in scattering loss by the smaller NPs.

Study of interfacial strain at the α-Al2O3/monolayer MoS2 interface by first principle calculations

NASA Astrophysics Data System (ADS)

Yu, Sheng; Ran, Shunjie; Zhu, Hao; Eshun, Kwesi; Shi, Chen; Jiang, Kai; Gu, Kunming; Seo, Felix Jaetae; Li, Qiliang

2018-01-01

With the advances in two-dimensional (2D) transition metal dichalcogenides (TMDCs) based metal-oxide-semiconductor field-effect transistor (MOSFET), the interface between the semiconductor channel and gate dielectrics has received considerable attention due to its significant impacts on the morphology and charge transport of the devices. In this study, first principle calculations were utilized to investigate the strain effect induced by the interface between crystalline α-Al2O3 (0001)/h-MoS2 monolayer. The results indicate that the 1.3 nm Al2O3 can induce a 0.3% tensile strain on the MoS2 monolayer. The strain monotonically increases with thicker dielectric layers, inducing more significant impact on the properties of MoS2. In addition, the study on temperature effect indicates that the increasing temperature induces monotonic lattice expansion. This study clearly indicates that the dielectric engineering can effectively tune the properties of 2D TMDCs, which is very attractive for nanoelectronics.

Colossal internal barrier layer capacitance effect in polycrystalline copper (II) oxide

NASA Astrophysics Data System (ADS)

Sarkar, Sudipta; Jana, Pradip Kumar; Chaudhuri, B. K.

2008-01-01

Dielectric spectroscopy analysis of the high permittivity (κ˜104) copper (II) oxide (CuO) ceramic shows that the grain contribution plays a major role for the giant-κ value at low temperature, whereas grain boundary (GB) contribution dominates around room temperature and above. Moreover, impedance spectroscopy analysis reveals electrically heterogeneous microstructure in CuO consisting of semiconducting grains and insulating GBs. Finally, the giant dielectric phenomenon exhibited by CuO is attributed to the internal barrier layer (due to GB) capacitance mechanism.

Directional Emission from Metal-Dielectric-Metal Structures: Effect of Mixed Metal Layers, Dye Location and Dielectric Thickness.

PubMed

Choudhury, Sharmistha Dutta; Badugu, Ramachandram; Ray, Krishanu; Lakowicz, Joseph R

2015-02-12

Metal-dielectric-metal (MDM) structures provide directional emission close to the surface normal, which offers opportunities for new design formats in fluorescence based applications. The directional emission arises due to near-field coupling of fluorophores with the optical modes present in the MDM substrate. Reflectivity simulations and dispersion diagrams provide a basic understanding of the mode profiles and the factors that affect the coupling efficiency and the spatial distribution of the coupled emission. This work reveals that the composition of the metal layers, the location of the dye in the MDM substrate and the dielectric thickness are important parameters that can be chosen to tune the color of the emission wavelength, the angle of observation, the angular divergence of the emission and the polarization of the emitted light. These features are valuable for displays and optical signage.

Directional Emission from Metal-Dielectric-Metal Structures: Effect of Mixed Metal Layers, Dye Location and Dielectric Thickness

PubMed Central

Choudhury, Sharmistha Dutta; Badugu, Ramachandram; Ray, Krishanu; Lakowicz, Joseph R.

2015-01-01

Metal-dielectric-metal (MDM) structures provide directional emission close to the surface normal, which offers opportunities for new design formats in fluorescence based applications. The directional emission arises due to near-field coupling of fluorophores with the optical modes present in the MDM substrate. Reflectivity simulations and dispersion diagrams provide a basic understanding of the mode profiles and the factors that affect the coupling efficiency and the spatial distribution of the coupled emission. This work reveals that the composition of the metal layers, the location of the dye in the MDM substrate and the dielectric thickness are important parameters that can be chosen to tune the color of the emission wavelength, the angle of observation, the angular divergence of the emission and the polarization of the emitted light. These features are valuable for displays and optical signage. PMID:25844110

Effects of monoclinic symmetry on the properties of biaxial liquid crystals

NASA Astrophysics Data System (ADS)

Solodkov, Nikita V.; Nagaraj, Mamatha; Jones, J. Cliff

2018-04-01

Tilted smectic liquid crystal phases such as the smectic-C phase seen in calamitic liquid crystals are usually treated using the assumption of biaxial orthorhombic symmetry. However, the smectic-C phase has monoclinic symmetry, thereby allowing disassociation of the principal optic and dielectric axes based on symmetry and invariance principles. This is demonstrated here by comparing optical and dielectric measurements for two materials with highly first-order direct transitions from nematic to smectic-C phases. The results show a high difference between the orientations of the principal axes sets, which is interpreted as the existence of two distinct cone angles for optical and dielectric frequencies. Both materials exhibit an increasing degree of monoclinic behavior with decreasing temperature. Due to fast switching speeds, ferroelectric smectic-C* materials are important for fast modulators and LCoS devices, where the dielectric biaxiality influences device operation.

Stiff, strong, yet tough free-standing dielectric films of graphene nanosheets-polyurethane nanocomposites with very high dielectric constant and loss

NASA Astrophysics Data System (ADS)

Jan, Rahim; Habib, Amir; Gul, Iftikhar Hussain

2016-01-01

In this study, graphene nanosheets (GNS) prepared through a liquid exfoliation technique are dispersed in thermoplastic polyurethane (TPU) at a volume fraction (Vf) of up to 0.19. Then, the electrical and mechanical properties of the obtained composites are characterized. The dielectric spectroscopy shows an excessive variation in dielectric constant (1.1 to 3.53 × 107) and dielectric tangent loss (0.03 to 2515) with varying Vf over the frequency range of 25 kHz to 5 MHz. A considerable enhancement in electrical conductivity (DC) is found, from 3.87 × 10-10 S/m (base polymer) to 53.5 S/m for the 0.19 Vf GNS-TPU nanocomposite. The GNS-TPU composites are mechanically robust, with a considerable increase in stiffness (˜4-fold) and strength (almost twice), maintaining its ductility up to 0.09 Vf GNS. The high dielectric constant at lower frequencies is attributed to the well-established Maxwell-Wagner polarization effect, whereas the high dielectric tangent loss is due to leakage currents as a physical conducting network is formed at high filler loadings. The layered structure, high aspect ratio, and improved dispersion of GNS are the main reasons for the improvement in both the dielectric characteristics and the mechanical properties of the host polymer. [Figure not available: see fulltext.

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena, E-mail: vmisra@ncsu.edu

2015-06-15

Many dielectrics have been proposed for the gate stack or passivation of AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors, to reduce gate leakage and current collapse, both for power and RF applications. Atomic Layer Deposition (ALD) is preferred for dielectric deposition as it provides uniform, conformal, and high quality films with precise monolayer control of film thickness. Identification of the optimum ALD dielectric for the gate stack or passivation requires a critical investigation of traps created at the dielectric/AlGaN interface. In this work, a pulsed-IV traps characterization method has been used for accurate characterization of interface traps withmore » a variety of ALD dielectrics. High-k dielectrics (HfO{sub 2}, HfAlO, and Al{sub 2}O{sub 3}) are found to host a high density of interface traps with AlGaN. In contrast, ALD SiO{sub 2} shows the lowest interface trap density (<2 × 10{sup 12 }cm{sup −2}) after annealing above 600 °C in N{sub 2} for 60 s. The trend in observed trap densities is subsequently explained with bonding constraint theory, which predicts a high density of interface traps due to a higher coordination state and bond strain in high-k dielectrics.« less

The dielectric spectroscopy of human red blood cells: the differentiation of old from fresh cells.

PubMed

David, Marcelo; Levy, Evgeniya; Feldman, Yuri; Ben Ishai, Paul; Zelig, Orly; Yedgar, Saul; Barshtein, Gregory

2017-06-22

The objective of the study was to gauge the effect of storage lesions on the dielectric response of red blood cells (RBC), in particular those processes linked to deformations of the cellular membrane known as the β-dispersion. The dielectric response of RBC suspensions, exposed to blood-bank cold storage, was studied using time-domain dielectric spectroscopy (TDDS) in the frequency range of 500 kHz up to 1 GHz. The measured dielectric processes are characterized by their dielectric strength (Δε) and relaxation time (τ). Changes in the dielectric properties of the RBC suspensions due to storage-related lesions were evaluated. For a quantitative characterization of RBC lesions, we measured the deformability of fresh and stored RBC as expressed by their elongation ratio (ER), which was achieved under a shear stress of 3.0 Pa. The results show that the storage of RBC induced a statistically significant decrease of dielectric relaxation times. In addition, a sound correlation between the mean values of ER and the relaxation times was observed (Spearman's correlation coefficient ρ  =  0.847). We draw the conclusion that those alterations in the relaxation time are induced by changes in the shape of the RBC that happen during cold-storage. The evolution of the β-dispersion of RBC opens new possibilities in the blood bank inventory management.

Influence of rare earth ion doping (Ce and Dy) on electrical and magnetic properties of cobalt ferrites

NASA Astrophysics Data System (ADS)

Hashim, Mohd.; Raghasudha, M.; Meena, Sher Singh; Shah, Jyoti; Shirsath, Sagar E.; Kumar, Shalendra; Ravinder, D.; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

2018-03-01

Ce and Dy substituted Cobalt ferrites with the chemical composition CoCexDyxFe2-2xO4 (x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) were synthesized through the chemical route, citrate-gel auto-combustion method. The structural characterization was carried out with the help of XRD Rieveld analysis, SEM and EDAX analysis. Formation of spinel cubic structure of the ferrites was confirmed by XRD analysis. SEM and EDAX results show that the particles are homogeneous with slight agglomeration without any impurity pickup. The effect of RE ion doping (Ce and Dy) on the dielectric, magnetic and impedance studies was systematically investigated by LCR meter, Vibrating Sample Magnetometer and Impedance analyzer respectively at room temperature in the frequency range of 10 Hz-10 MHz. Various dielectric parameters viz., dielectric constant, dielectric loss and ac conductivity were measured. The dielectric constant of all the ferrite compositions shows normal dielectric dispersion of ferrites with frequency. Impedance analysis confirms that the conduction in present ferrites is majorly due to the grain boundary mechanism. Ferrite sample with x = 0.03 show high dielectric constant, low dielectric loss and hence can be utilized in high frequency electromagnetic devices. Magnetization measurements indicate that with increase in Ce and Dy content in cobalt ferrites, the magnetization values decreased and coercivity has increased.

Some Aspects of the Failure Mechanisms in BaTiO3-Based Multilayer Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Liu, David Donhang; Sampson, Michael J.

2012-01-01

The objective of this presentation is to gain insight into possible failure mechanisms in BaTiO3-based ceramic capacitors that may be associated with the reliability degradation that accompanies a reduction in dielectric thickness, as reported by Intel Corporation in 2010. The volumetric efficiency (microF/cm3) of a multilayer ceramic capacitor (MLCC) has been shown to not increase limitlessly due to the grain size effect on the dielectric constant of ferroelectric ceramic BaTiO3 material. The reliability of an MLCC has been discussed with respect to its structure. The MLCCs with higher numbers of dielectric layers will pose more challenges for the reliability of dielectric material, which is the case for most base-metal-electrode (BME) capacitors. A number of MLCCs manufactured using both precious-metal-electrode (PME) and BME technology, with 25 V rating and various chip sizes and capacitances, were tested at accelerated stress levels. Most of these MLCCs had a failure behavior with two mixed failure modes: the well-known rapid dielectric wearout, and so-called 'early failures." The two failure modes can be distinguished when the testing data were presented and normalized at use-level using a 2-parameter Weibull plot. The early failures had a slope parameter of Beta >1, indicating that the early failures are not infant mortalities. Early failures are triggered due to external electrical overstress and become dominant as dielectric layer thickness decreases, accompanied by a dramatic reduction in reliability. This indicates that early failures are the main cause of the reliability degradation in MLCCs as dielectric layer thickness decreases. All of the early failures are characterized by an avalanche-like breakdown leakage current. The failures have been attributed to the extrinsic minor construction defects introduced during fabrication of the capacitors. A reliability model including dielectric thickness and extrinsic defect feature size is proposed in this presentation. The model can be used to explain the Intel-reported reliability degradation in MLCCs with respect to the reduction of dielectric thickness. It can also be used to estimate the reliability of a MLCC based on its construction and microstructure parameters such as dielectric thickness, average grain size, and number of dielectric layers. Measures for preventing early failures are also discussed in this document.

Modeling and control of a dielectric elastomer actuator

NASA Astrophysics Data System (ADS)

Gupta, Ujjaval; Gu, Guo-Ying; Zhu, Jian

2016-04-01

The emerging field of soft robotics offers the prospect of applying soft actuators as artificial muscles in the robots, replacing traditional actuators based on hard materials, such as electric motors, piezoceramic actuators, etc. Dielectric elastomers are one class of soft actuators, which can deform in response to voltage and can resemble biological muscles in the aspects of large deformation, high energy density and fast response. Recent research into dielectric elastomers has mainly focused on issues regarding mechanics, physics, material designs and mechanical designs, whereas less importance is given to the control of these soft actuators. Strong nonlinearities due to large deformation and electromechanical coupling make control of the dielectric elastomer actuators challenging. This paper investigates feed-forward control of a dielectric elastomer actuator by using a nonlinear dynamic model. The material and physical parameters in the model are identified by quasi-static and dynamic experiments. A feed-forward controller is developed based on this nonlinear dynamic model. Experimental evidence shows that this controller can control the soft actuator to track the desired trajectories effectively. The present study confirms that dielectric elastomer actuators are capable of being precisely controlled with the nonlinear dynamic model despite the presence of material nonlinearity and electromechanical coupling. It is expected that the reported results can promote the applications of dielectric elastomer actuators to soft robots or biomimetic robots.

Cluster synthesis of monodisperse rutile-TiO2 nanoparticles and dielectric TiO2-vinylidene fluoride oligomer nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balasubramanian, B; Kraemer, KL; Valloppilly, SR

2011-09-13

The embedding of oxide nanoparticles in polymer matrices produces a greatly enhanced dielectric response by combining the high dielectric strength and low loss of suitable host polymers with the high electric polarizability of nanoparticles. The fabrication of oxide-polymer nanocomposites with well-controlled distributions of nanoparticles is, however, challenging due to the thermodynamic and kinetic barriers between the polymer matrix and nanoparticle fillers. In the present study, monodisperse TiO2 nanoparticles having an average particle size of 14.4 nm and predominant rutile phase were produced using a cluster-deposition technique without high-temperature thermal annealing and subsequently coated with uniform vinylidene fluoride oligomer (VDFO) moleculesmore » using a thermal evaporation source, prior to deposition as TiO2-VDFO nanocomposite films on suitable substrates. The molecular coatings on TiO2 nanoparticles serve two purposes, namely to prevent the TiO2 nanoparticles from contacting each other and to couple the nanoparticle polarization to the matrix. Parallel-plate capacitors made of TiO2-VDFO nanocomposite film as the dielectric exhibit minimum dielectric dispersion and low dielectric loss. Dielectric measurements also show an enhanced effective dielectric constant in TiO2-VDFO nanocomposites as compared to that of pure VDFO. This study demonstrates for the first time a unique electroactive particle coating in the form of a ferroelectric VDFO that has high-temperature stability as compared to conventionally used polymers for fabricating dielectric oxide-polymer nanocomposites.« less

Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces.

PubMed

Ward, Jeremy W; Smith, Hannah L; Zeidell, Andrew; Diemer, Peter J; Baker, Stephen R; Lee, Hyunsu; Payne, Marcia M; Anthony, John E; Guthold, Martin; Jurchescu, Oana D

2017-05-31

Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic-inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor-dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.

Effect of Solvent Dielectric Constant on the Formation of Large Flat Bilayer Stacks in a Lecithin/Hexadecanol Hydrogel.

PubMed

Nakagawa, Yasuharu; Nakazawa, Hiromitsu; Kato, Satoru

2016-07-12

We investigated the effect of dielectric properties of the aqueous medium on the novel type of hydrogel composed of a crude lecithin mixture (PC70) and hexadecanol (HD), in which charged sheet-like bilayers are kept far apart due to interbilayer repulsive interaction. We used dipropylene glycol (DPG) as a modifier of the dielectric properties and examined its effect on the hydrogel by synchrotron X-ray diffraction, differential scanning calorimetry (DSC), polarized optical microscopy, and freeze-fracture electron microscopy. We found that at a DPG weight fraction in the aqueous medium WDPG ≈ 0.4, the bilayer organization is transformed into unusually large flat bilayer stacks with a regular lamellar spacing of 6.25 nm and consequently disintegration of the hydrogel takes place. Semiquantitative calculation of the interbilayer interaction energy based on the Deyaguin-Landau-Verwey-Overbeek (DLVO) theory suggested that the reduction of the aqueous medium dielectric constant ε by DPG may lower the energy barrier preventing flat bilayers from coming closer together. We inferred that the size of the bilayer sheet increases because the reduction of ε promotes protonation of acidic lipids that work as edge-capping molecules.

In vitro deposition of hydroxyapatite on cortical bone collagen stimulated by deformation-induced piezoelectricity.

PubMed

Noris-Suárez, Karem; Lira-Olivares, Joaquin; Ferreira, Ana Marina; Feijoo, José Luis; Suárez, Nery; Hernández, Maria C; Barrios, Esteban

2007-03-01

In the present work, we have studied the effect of the piezoelectricity of elastically deformed cortical bone collagen on surface using a biomimetic approach. The mineralization process induced as a consequence of the piezoelectricity effect was evaluated using scanning electron microscopy (SEM), thermally stimulated depolarization current (TSDC), and differential scanning calorimetry (DSC). SEM micrographs showed that mineralization occurred predominantly over the compressed side of bone collagen, due to the effect of piezoelectricity, when the sample was immersed in the simulated body fluid (SBF) in a cell-free system. The TSDC method was used to examine the complex collagen dielectric response. The dielectric spectra of deformed and undeformed collagen samples with different hydration levels were compared and correlated with the mineralization process followed by SEM. The dielectric measurements showed that the mineralization induced significant changes in the dielectric spectra of the deformed sample. DSC and TSDC results demonstrated a reduction of the collagen glass transition as the mineralization process advanced. The combined use of SEM, TSDC, and DSC showed that, even without osteoblasts present, the piezoelectric dipoles produced by deformed collagen can produce the precipitation of hydroxyapatite by electrochemical means, without a catalytic converter as occurs in classical biomimetic deposition.

Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory

NASA Astrophysics Data System (ADS)

Pavel, Akeed A.; Khan, Mehjabeen A.; Kirawanich, Phumin; Islam, N. E.

2008-10-01

A methodology to simulate memory structures with metal nanocrystal islands embedded as floating gate in a high-κ dielectric material for simultaneous enhancement of programming speed and retention time is presented. The computational concept is based on a model for charge transport in nano-scaled structures presented earlier, where quantum mechanical tunneling is defined through the wave impedance that is analogous to the transmission line theory. The effects of substrate-tunnel dielectric conduction band offset and metal work function on the tunneling current that determines the programming speed and retention time is demonstrated. Simulation results confirm that a high-κ dielectric material can increase programming current due to its lower conduction band offset with the substrate and also can be effectively integrated with suitable embedded metal nanocrystals having high work function for efficient data retention. A nano-memory cell designed with silver (Ag) nanocrystals embedded in Al 2O 3 has been compared with similar structure consisting of Si nanocrystals in SiO 2 to validate the concept.

Measurement of surface charges on the dielectric film based on field mills under the HVDC corona wire

NASA Astrophysics Data System (ADS)

Donglai, WANG; Tiebing, LU; Yuan, WANG; Bo, CHEN; Xuebao, LI

2018-05-01

The ion flow field on the ground is one of the significant parameters used to evaluate the electromagnetic environment of high voltage direct current (HVDC) power lines. HVDC lines may cross the greenhouses due to the restricted transmission corridors. Under the condition of ion flow field, the dielectric films on the greenhouses will be charged, and the electric fields in the greenhouses may exceed the limit value. Field mills are widely used to measure the ground-level direct current electric fields under the HVDC power lines. In this paper, the charge inversion method is applied to calculate the surface charges on the dielectric film according to the measured ground-level electric fields. The advantages of hiding the field mill probes in the ground are studied. The charge inversion algorithm is optimized in order to decrease the impact of measurement errors. Based on the experimental results, the surface charge distribution on a piece of quadrate dielectric film under a HVDC corona wire is studied. The enhanced effect of dielectric film on ground-level electric field is obviously weakened with the increase of film height. Compared with the total electric field strengths, the normal components of film-free electric fields at the corresponding film-placed positions have a higher effect on surface charge accumulation.

Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics on Flexible Substrates

PubMed Central

Tetzner, Kornelius; Bose, Indranil R.; Bock, Karlheinz

2014-01-01

In this work, the insulating properties of poly(4-vinylphenol) (PVP) and SU-8 (MicroChem, Westborough, MA, USA) dielectrics are analyzed and compared with each other. We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP) using both dielectric materials and evaluate the results regarding the processability. Due to the lower process temperature needed for the SU-8 deposition, the realization of organic transistors on flexible substrates is demonstrated showing comparable charge carrier mobilities to devices using PVP on glass. In addition, a µ-dispensing procedure of the LCP on SU-8 is presented, improving the switching behavior of the organic transistors, and the promising stability data of the SU-8/LCP stack are verified after storing the structures for 60 days in ambient air showing negligible irreversible degradation of the organic semiconductor. PMID:28788243

8 MeV electron beam induced modifications in the thermal, structural and electrical properties of nanophase CeO2 for potential electronics applications

NASA Astrophysics Data System (ADS)

Babitha, K. K.; Sreedevi, A.; Priyanka, K. P.; Ganesh, S.; Varghese, Thomas

2018-06-01

The effect of 8 MeV electron beam irradiation on the thermal, structural and electrical properties of CeO2 nanoparticles synthesized by chemical precipitation route was investigated. The dose dependent effect of electron irradiation was studied using various characterization techniques such as, thermogravimetric and differential thermal analyses, X-ray diffraction, Fourier transformed infrared spectroscopy and impedance spectroscopy. Systematic investigation based on the results of structural studies confirm that electron beam irradiation induces defects and particle size variation on CeO2 nanoparticles, which in turn results improvements in AC conductivity, dielectric constant and loss tangent. Structural modifications and high value of dielectric constant for CeO2 nanoparticles due to electron beam irradiation make it as a promising material for the fabrication of gate dielectric in metal oxide semiconductor devices.

Lattice dynamical and dielectric properties of L-amino acids

NASA Astrophysics Data System (ADS)

Tulip, P. R.; Clark, S. J.

2006-08-01

We present the results of ab initio calculations of the lattice dynamical and dielectric properties of the L-amino acids L-alanine, L-leucine, and L-isoleucine. Normal-mode frequencies and dielectric permittivity tensors are obtained using density-functional perturbation theory implemented within the plane-wave pseudopotential approximation. IR spectra are calculated and are used to analyze the effects of intermolecular interactions and zwitterionization upon the lattice dynamics. It is found that vibronic modes associated with the carboxy and amino functional groups undergo modification from their free-molecule values due to the presence of hydrogen bonds. The role of macroscopic electric fields set up by zone-center normal modes in the lattice dynamics is investigated by analysis of the Born effective charge. Calculated permittivity tensors are found to be greater than would be obtained by a naive use of the isolated molecular values, indicating the role of intermolecular interactions in increasing molecular polarizability.

Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics onFlexible Substrates.

PubMed

Tetzner, Kornelius; Bose, Indranil R; Bock, Karlheinz

2014-10-29

In this work, the insulating properties of poly(4-vinylphenol) (PVP) and SU-8 (MicroChem, Westborough, MA, USA) dielectrics are analyzed and compared with each other. We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP) using both dielectric materials and evaluate the results regarding the processability. Due to the lower process temperature needed for the SU-8 deposition, the realization of organic transistors on flexible substrates is demonstrated showing comparable charge carrier mobilities to devices using PVP on glass. In addition, a µ-dispensing procedure of the LCP on SU-8 is presented, improving the switching behavior of the organic transistors, and the promising stability data of the SU-8/LCP stack are verified after storing the structures for 60 days in ambient air showing negligible irreversible degradation of the organic semiconductor.

A soft flying robot driven by a dielectric elastomer actuator (Conference Presentation)

NASA Astrophysics Data System (ADS)

Wang, Yingxi; Zhang, Hui; Godaba, Hareesh; Khoo, Boo Cheong; Zhu, Jian

2017-04-01

Modern unmanned aerial vehicles are gaining promising success because of their versatility, flexibility, and minimized risk of operations. Most of them are normally designed and constructed based on hard components. For example, the body of the vehicle is generally made of aluminum or carbon fibers, and electric motors are adopted as the main actuators. These hard materials are able to offer reasonable balance of structural strength and weight. However, they exhibit apparent limitations. For instance, such robots are fragile in even small clash with surrounding objects. In addition, their noise is quite high due to spinning of rotors or propellers. Here we aim to develop a soft flying robot using soft actuators. Due to its soft body, the robot can work effectively in unstructured environment. The robot may also exhibit interesting attributes, including low weight, low noise, and low power consumption. This robot mainly consists of a dielectric elastomer balloon made of two layers of elastomers. One is VHB (3M), and the other is natural rubber. The balloon is filled with helium, which can make the robot nearly neutral. When voltage is applied to either of the two dielectric elastomers, the balloon expands. So that the buoyance can be larger than the robot's weight, and the robot can move up. In this seminar, we will show how to harness the dielectric breakdown of natural rubber to achieve giant deformation of this soft robot. Based on this method, the robot can move up effectively in air.

Synthesis, morphological, electromechanical characterization of (CaMgFex)Fe1-xTi3O12-δ/PDMS nanocomposite thin films for energy storage application

NASA Astrophysics Data System (ADS)

Tripathy, Ashis; Sharma, Priyaranjan; Sahoo, Narayan

2018-03-01

At the present time, flexible and stretchable electronics has intended to use the new cutting-edge technologies for advanced electronic application. Currently, Polymers are being employed for such applications but they are not effective due to their low dielectric constant. To enhance the dielectric properties of polymer for energy storage application, it is necessary to add ceramic material of high dielectric constant to synthesize a polymer-ceramic composite. Therefore, a novel attempt has been made to enhance the dielectric properties of the Polydimethylsiloxane (PDMS) polymer by adding (CaMgFex)Fe1-xTi3O12-δ(0 90%), which can make it a potential material for advanced flexible electronic devices, energy storage and biomedical applications.

A comparative study of the properties of five-layered Aurivillius oxides A2Bi4Ti5O18 (A = Ba, Pb, and Sr) synthesized by different wet chemical routes

NASA Astrophysics Data System (ADS)

Dubey, Shivangi; Subohi, Oroosa; Kurchania, Rajnish

2018-07-01

This paper reports the detailed study of the effect of different wet chemical synthesis routes (solution combustion, co-precipitation, and sol-gel route) on the microstructure, phase formation, dielectric, electrical, and ferroelectric properties of five-layered Aurivillius oxides: A2Bi4Ti5O18 (A = Ba, Pb, and Sr). Different synthesis parameters like the precursors used, synthesis temperature, and reaction time affects the morphology of the ceramics. Microstructure in turn influences the dielectric and ferroelectric properties. It was observed that the sol-gel-synthesized ceramics possess higher dielectric constant and remanent polarization, low dielectric loss due to lower conductivity in these samples as a result of higher density in these compounds as compared to those synthesized by other wet chemical synthesis routes such as solution combustion route and co-precipitation technique. The XRD data are used for phase analysis and surface morphology is studied using SEM images. Dielectric and electrical properties are investigated as a function of frequency and temperature.

Polarization and angle insensitive dual-band bandpass frequency selective surface using all-dielectric metamaterials

NASA Astrophysics Data System (ADS)

Yu, Fei; Wang, Jun; Wang, Jiafu; Ma, Hua; Du, Hongliang; Xu, Zhuo; Qu, Shaobo

2016-04-01

In this paper, we demonstrate a dual-band bandpass all-dielectric frequency selective surface (FSS), the building elements of which are high-permittivity ceramic particles rather than metallic patterns. With proper structural design and parameter adjustment, the resonant frequency can be tuned at will. Dual-band bandpass response can be realized due to the coupling between electric and magnetic resonances. As an example, a dual-band bandpass FSS is designed in Ku band, which is composed of two-dimensional periodic arrays of complementary quatrefoil structures (CQS) cut from dielectric plates. Moreover, cylindrical dielectric resonators are introduced and placed in the center of each CQS to broaden the bandwidth and to sharpen the cut-off frequency. Theoretical analysis shows that the bandpass response arises from impedance matching caused by electric and magnetic resonances. In addition, effective electromagnetic parameters and dynamic field distributions are presented to explain the mechanism of impedance matching. The proposed FSS has the merits of polarization independence, stable transmission, and sharp roll-off frequency. The method can also be used to design all-dielectric FSSs with continuum structures at other frequencies.

Self-Healing Polymer Dielectric for a High Capacitance Gate Insulator.

PubMed

Ko, Jieun; Kim, Young-Jae; Kim, Youn Sang

2016-09-14

Self-healing materials are required for development of various flexible electronic devices to repair cracks and ruptures caused by repetitive bending or folding. Specifically, a self-healing dielectric layer has huge potential to achieve healing electronics without mechanical breakdown in flexible operations. Here, we developed a high performance self-healing dielectric layer with an ionic liquid and catechol-functionalized polymer which exhibited a self-healing ability for both bulk and film states under mild self-healing conditions at 55 °C for 30 min. Due to the sufficient ion mobility of the ionic liquid in the polymer matrix, it had a high capacitance value above 1 μF/cm(2) at 20 Hz. Moreover, zinc oxide (ZnO) thin-film transistors (TFTs) with a self-healing dielectric layer exhibited a high field-effect mobility of 16.1 ± 3.07 cm(2) V(-1) s(-1) at a gate bias of 3 V. Even after repetitive self-healing of the dielectric layer from mechanical breaking, the electrical performance of the TFTs was well-maintained.

Ultrafast high-power microwave window breakdown: nonlinear and postpulse effects.

PubMed

Chang, C; Verboncoeur, J; Guo, M N; Zhu, M; Song, W; Li, S; Chen, C H; Bai, X C; Xie, J L

2014-12-01

The time- and space-dependent optical emissions of nanosecond high-power microwave discharges near a dielectric-air interface have been observed by nanosecond-response four-framing intensified-charged-coupled device cameras. The experimental observations indicate that plasma developed more intensely at the dielectric-air interface than at the free-space region with a higher electric-field amplitude. A thin layer of intense light emission above the dielectric was observed after the microwave pulse. The mechanisms of the breakdown phenomena are analyzed by a three-dimensional electromagnetic-field modeling and a two-dimensional electromagnetic particle-in-cell simulation, revealing the formation of a space-charge microwave sheath near the dielectric surface, accelerated by the normal components of the microwave field, significantly enhancing the local-field amplitude and hence ionization near the dielectric surface. The nonlinear positive feedback of ionization, higher electron mobility, and ultraviolet-driven photoemission due to the elevated electron temperature are crucial for achieving the ultrafast discharge. Following the high-power microwave pulse, the sheath sustains a glow discharge until the sheath collapses.

Humidity effects on surface dielectric barrier discharge for gaseous naphthalene decomposition

NASA Astrophysics Data System (ADS)

Abdelaziz, Ayman A.; Ishijima, Tatsuo; Seto, Takafumi

2018-04-01

Experiments are performed using dry and humid air to clarify the effects of water vapour on the characteristics of surface dielectric barrier discharge (SDBD) and investigate its impact on the performance of the SDBD for decomposition of gaseous naphthalene in air stream. The current characteristics, including the discharge and the capacitive currents, are deeply analyzed and the discharge mechanism is explored. The results confirmed that the humidity affected the microdischarge distribution without affecting the discharge mode. Interestingly, it is found that the water vapour had a significant influence on the capacitance of the reactor due to its deposition on the discharge electrode and the dielectric, which, in turn, affects the power loss in the dielectric and the total power consumed in the reactor. Thus, the factor of the humidity effect on the power loss in the dielectric should be considered in addition to its effect on the attachment coefficient. Additionally, there was an optimum level of the humidity for the decomposition of naphthalene in the SDBD, and its value depended on the gas composition, where the maximum naphthalene decomposition efficiency in O2/H2O is achieved at the humidity level ˜10%, which was lower than that obtained in air/H2O (˜28%). The results also revealed that the role of the humidity in the decomposition efficiency was not significant in the humidified O2 at high power level. This was attributed to the significant increase in oxygen-derived species (such as O atoms and O3) at high power, which was enough to overcome the negative effects of the humidity.

Electrode polarization and unusual magnetodielectric effect in a transformer oil-based magnetic nanofluid thin layer.

PubMed

Rajnak, Michal; Dolnik, Bystrik; Kurimsky, Juraj; Cimbala, Roman; Kopcansky, Peter; Timko, Milan

2017-01-07

In the present paper, we provide low-frequency dielectric spectra for a thin layer of a nanofluid based on transformer oil and iron oxide nanoparticles stabilized by oleic acid. The complex dielectric permittivity measured in the frequency range from 1 mHz to 200 kHz shows an obvious electrode polarization effect and a Debye-like dielectric relaxation process. Both effects stem from the presence of space charge in the oil due to impurity ions, and in the nanofluid represented predominantly by a residual surfactant and uncompensated particle surface charge. It is shown that the spectra, which were measured in the temperature range from 298 K to 358 K, can be well represented by a fitting function consisted of one Havriliak-Negami term and the Jonscher's power law. In the investigated magnetic nanofluid layer, we found that the onset of the electrode polarization is suppressed to lower frequencies by the application of an external magnetic field (300 mT). This phenomenon is explained by a slowed-down migration of the space charge due to the Lorentz force and by a hindering effect of the formed magnetic nanoparticle aggregates. Surprisingly, a moderate decrease in the whole permittivity spectrum was observed for both parallel and perpendicular orientations of the electric and magnetic fields. This is in contradiction with the usual magnetodielectric anisotropy effect. Based on our qualitative analysis, we discuss potential reasons accountable for the observed effect.

Mechanistic study of plasma damage to porous low-k: Process development and dielectric recovery

NASA Astrophysics Data System (ADS)

Shi, Hualiang

Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k interconnect. However, during the O2 plasma ashing process, the porous low-k dielectrics tend to degrade due to methyl depletion, moisture uptake, and densification, increasing the dielectric constant and leakage current. This dissertation presents a study of the mechanisms of plasma damage and dielectric recovery. The kinetics of plasma interaction with low-k dielectrics was investigated both experimentally and theoretically. By using a gap structure, the roles of ion, photon, and radical in producing damage on low-k dielectrics were differentiated. Oxidative plasma induced damage was proportional to the oxygen radical density, enhanced by VUV photon, and increased with substrate temperature. Ion bombardment induced surface densification, blocking radical diffusion. Two analytical models were derived to quantify the plasma damage. Based on the radical diffusion, reaction, and recombination inside porous low-k dielectrics, a plasma altered layer model was derived to interpret the chemical effect in the low ion energy region. It predicted that oxidative plasma induced damage can be reduced by decreasing pore radius, substrate temperature, and oxygen radical density and increasing carbon concentration and surface recombination rate inside low-k dielectrics. The model validity was verified by experiments and Monte-Carlo simulations. This model was also extended to the patterned low-k structure. Based on the ion collision cascade process, a sputtering yield model was introduced to interpret the physical effect in the high ion energy region. The model validity was verified by checking the ion angular and energy dependences of sputtering yield using O2/He/Ar plasma, low-k dielectrics with different k values, and a Faraday cage. Low-k dielectrics and plasma process were optimized to reduce plasma damage, including increasing carbon concentration in low-k dielectrics, switching plasma generator from ICP to RIE, increasing hard mask thickness, replacing O2 by CO2 plasma, increasing CO addition in CO/O 2 plasma, and increasing N2 addition in CO2/N 2 plasma. By combining analytical techniques with the Kramers-Kronig dispersion relation and quantum chemistry calculation, the origin of dielectric loss was ascribed to the physisorbed water molecules. Post-ash CH4 plasma treatment, vapor silylation process, and UV radiation were developed to repair plasma damage.

On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yanhui, E-mail: huangy12@rpi.edu; Schadler, Linda S.

The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by amore » Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.« less

Dielectric properties of human normal, malignant and cirrhotic liver tissue: in vivo and ex vivo measurements from 0.5 to 20 GHz using a precision open-ended coaxial probe.

PubMed

O'Rourke, Ann P; Lazebnik, Mariya; Bertram, John M; Converse, Mark C; Hagness, Susan C; Webster, John G; Mahvi, David M

2007-08-07

Hepatic malignancies have historically been treated with surgical resection. Due to the shortcomings of this technique, there is interest in other, less invasive, treatment modalities, such as microwave hepatic ablation. Crucial to the development of this technique is the accurate knowledge of the dielectric properties of human liver tissue at microwave frequencies. To this end, we characterized the dielectric properties of in vivo and ex vivo normal, malignant and cirrhotic human liver tissues from 0.5 to 20 GHz. Analysis of our data at 915 MHz and 2.45 GHz indicates that the dielectric properties of ex vivo malignant liver tissue are 19 to 30% higher than normal tissue. The differences in the dielectric properties of in vivo malignant and normal liver tissue are not statistically significant (with the exception of effective conductivity at 915 MHz, where malignant tissue properties are 16% higher than normal). Also, the dielectric properties of in vivo normal liver tissue at 915 MHz and 2.45 GHz are 16 to 43% higher than ex vivo. No statistically significant differences were found between the dielectric properties of in vivo and ex vivo malignant tissue (with the exception of effective conductivity at 915 MHz, where malignant tissue properties are 28% higher than normal). We report the one-pole Cole-Cole parameters for ex vivo normal, malignant and cirrhotic liver tissue in this frequency range. We observe that wideband dielectric properties of in vivo liver tissue are different from the wideband dielectric properties of ex vivo liver tissue, and that the in vivo data cannot be represented in terms of a Cole-Cole model. Further work is needed to uncover the mechanisms responsible for the observed wideband trends in the in vivo liver data.

Novel techniques for optical sensor using single core multi-layer structures for electric field detection

NASA Astrophysics Data System (ADS)

Ali, Amir R.; Kamel, Mohamed A.

2017-05-01

This paper studies the effect of the electrostriction force on the single optical dielectric core coated with multi-layers based on whispering gallery mode (WGM). The sensing element is a dielectric core made of polymeric material coated with multi-layers having different dielectric and mechanical properties. The external electric field deforming the sensing element causing shifts in its WGM spectrum. The multi-layer structures will enhance the body and the pressure forces acting on the core of the sensing element. Due to the gradient on the dielectric permittivity; pressure forces at the interface between every two layers will be created. Also, the gradient on Young's modulus will affect the overall stiffness of the optical sensor. In turn the sensitivity of the optical sensor to the electric field will be increased when the materials of each layer selected properly. A mathematical model is used to test the effect for that multi-layer structures. Two layering techniques are considered to increase the sensor's sensitivity; (i) Pressure force enhancement technique; and (ii) Young's modulus reduction technique. In the first technique, Young's modulus is kept constant for all layers, while the dielectric permittivity is varying. In this technique the results will be affected by the value dielectric permittivity of the outer medium surrounding the cavity. If the medium's dielectric permittivity is greater than that of the cavity, then the ascending ordered layers of the cavity will yield the highest sensitivity (the core will have the smallest dielectric permittivity) to the applied electric field and vice versa. In the second technique, Young's modulus is varying along the layers, while the dielectric permittivity has a certain constant value per layer. On the other hand, the descending order will enhance the sensitivity in the second technique. Overall, results show the multi-layer cavity based on these techniques will enhance the sensitivity compared to the typical polymeric optical sensor.

Interaction of slow highly charged ions with a metal surface covered with a thin dielectric film. The role of the neutralization energy in the nanostructures formation

NASA Astrophysics Data System (ADS)

Majkić, M. D.; Nedeljković, N. N.; Dojčilović, R. J.

2017-09-01

We consider the slow highly charged ions impinging upon a metal surface covered with a thin dielectric film, and formation of the surface nanostructures (craters) from the standpoint of the required energy. For the moderate ionic velocities, the size of the surface features depends on the deposited kinetic energy of the projectile and the ionic neutralization energy. The neutralization energy is calculated by employing the recently developed quasi-resonant two-state vector model for the intermediate Rydberg state population and the micro-staircase model for the cascade neutralization. The electron interactions with the ionic core, polarized dielectric and charge induced on the metal surface are modelled by the appropriate asymptotic expressions and the method for calculation of the effective ionic charges in the dielectric is proposed. The results are presented for the interaction of \\text{X}{{\\text{e}}Z+} ions (velocity v=0.25 a.u.; 25) with the metal surface (Co) covered with a thin dielectric film, for model values of dielectric constant inside the interaction region. In the absence of dielectric film, the neutralization energy is lower than the potential (ionization) energy due to the incomplete neutralization. The presence of dielectric film additionally decreases the neutralization energy. We calculate the projectile neutralization energy in the perturbed dielectric (perturbation is caused by the ionic motion and the surface structure formation). We correlate the neutralization energy added to the deposited kinetic energy with the experimentally obtained energy necessary for the formation of the nano-crater of a given depth.

Organic solar cells based on high dielectric constant materials: An approach to increase efficiency

NASA Astrophysics Data System (ADS)

Hamam, Khalil Jumah Tawfiq

The efficiency of organic solar cells still lags behind inorganic solar cells due to their low dielectric constant which results in a weakly screened columbic attraction between the photogenerated electron-hole system, therefore the probability of charge separating is low. Having an organic material with a high dielectric constant could be the solution to get separated charges or at least weakly bounded electron-hole pairs. Therefore, high dielectric constant materials have been investigated and studied by measuring modified metal-phthalocyanine (MePc) and polyaniline in pellets and thin films. The dielectric constant was investigated as a function of temperature and frequency in the range of 20Hz to1MHz. For MePc we found that the high dielectric constant was an extrinsic property due to water absorption and the formation of hydronuim ion allowed by the ionization of the functional groups such as sulphonated and carboxylic groups. The dielectric constant was high at low frequencies and decreasing as the frequency increase. Investigated materials were applied in fabricated bilayer heterojunction organic solar cells. The application of these materials in an organic solar cells show a significant stability under room conditions rather than improvement in their efficiency.

Effect of Dielectric and Liquid on Plasma Sterilization Using Dielectric Barrier Discharge Plasma

PubMed Central

Mastanaiah, Navya; Johnson, Judith A.; Roy, Subrata

2013-01-01

Plasma sterilization offers a faster, less toxic and versatile alternative to conventional sterilization methods. Using a relatively small, low temperature, atmospheric, dielectric barrier discharge surface plasma generator, we achieved ≥6 log reduction in concentration of vegetative bacterial and yeast cells within 4 minutes and ≥6 log reduction of Geobacillus stearothermophilus spores within 20 minutes. Plasma sterilization is influenced by a wide variety of factors. Two factors studied in this particular paper are the effect of using different dielectric substrates and the significance of the amount of liquid on the dielectric surface. Of the two dielectric substrates tested (FR4 and semi-ceramic (SC)), it is noted that the FR4 is more efficient in terms of time taken for complete inactivation. FR4 is more efficient at generating plasma as shown by the intensity of spectral peaks, amount of ozone generated, the power used and the speed of killing vegetative cells. The surface temperature during plasma generation is also higher in the case of FR4. An inoculated FR4 or SC device produces less ozone than the respective clean devices. Temperature studies show that the surface temperatures reached during plasma generation are in the range of 30°C–66°C (for FR4) and 20°C–49°C (for SC). Surface temperatures during plasma generation of inoculated devices are lower than the corresponding temperatures of clean devices. pH studies indicate a slight reduction in pH value due to plasma generation, which implies that while temperature and acidification may play a minor role in DBD plasma sterilization, the presence of the liquid on the dielectric surface hampers sterilization and as the liquid evaporates, sterilization improves. PMID:23951023

Effect of dielectric and liquid on plasma sterilization using dielectric barrier discharge plasma.

PubMed

Mastanaiah, Navya; Johnson, Judith A; Roy, Subrata

2013-01-01

Plasma sterilization offers a faster, less toxic and versatile alternative to conventional sterilization methods. Using a relatively small, low temperature, atmospheric, dielectric barrier discharge surface plasma generator, we achieved ≥ 6 log reduction in concentration of vegetative bacterial and yeast cells within 4 minutes and ≥ 6 log reduction of Geobacillus stearothermophilus spores within 20 minutes. Plasma sterilization is influenced by a wide variety of factors. Two factors studied in this particular paper are the effect of using different dielectric substrates and the significance of the amount of liquid on the dielectric surface. Of the two dielectric substrates tested (FR4 and semi-ceramic (SC)), it is noted that the FR4 is more efficient in terms of time taken for complete inactivation. FR4 is more efficient at generating plasma as shown by the intensity of spectral peaks, amount of ozone generated, the power used and the speed of killing vegetative cells. The surface temperature during plasma generation is also higher in the case of FR4. An inoculated FR4 or SC device produces less ozone than the respective clean devices. Temperature studies show that the surface temperatures reached during plasma generation are in the range of 30°C-66 °C (for FR4) and 20 °C-49 °C (for SC). Surface temperatures during plasma generation of inoculated devices are lower than the corresponding temperatures of clean devices. pH studies indicate a slight reduction in pH value due to plasma generation, which implies that while temperature and acidification may play a minor role in DBD plasma sterilization, the presence of the liquid on the dielectric surface hampers sterilization and as the liquid evaporates, sterilization improves.

Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers.

PubMed

Wilt, Jamie; Sakidja, Ridwan; Goul, Ryan; Wu, Judy Z

2017-10-25

Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al 2 O 3 dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al 2 O 3 on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al 2 O 3 . The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al 2 O 3 . The IL forms primarily due to exposure of the Al to trace O 2 and/or H 2 O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al 2 O 3 barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

Electrical properties and dielectric spectroscopy of Ar{sup +} implanted polycarbonate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chawla, Mahak, E-mail: mahak.chawla@gmail.com; Shekhawat, Nidhi; Aggarwal, Sanjeev

2015-05-15

The aim of the present paper is to study the effect of argon ion implantation on electrical and dielectric properties of polycarbonate. Specimens were implanted with 130 keV Ar{sup +} ions in the fluence ranging from 1×10{sup 14} to 1×10{sup 16} ions cm{sup −2}. The beam current used was ∼0.40 µA cm{sup −2}. The electrical conduction behaviour of virgin and Ar{sup +} implanted polycarbonate specimens have been studied through current-voltage (I-V characteristic) measurements. It has been observed that after implantation conductivity increases with increasing ion fluence. The dielectric spectroscopy of these specimens has been done in the frequency range of 100 kHz-100 MHz.more » Relaxation processes were studied by Cole-Cole plot of complex permittivity (real part of complex permittivity, ε′ vs. imaginary part of complex permittivity, ε″). The Cole-Cole plots have also been used to determine static dielectric constant (ε{sub s}), optical dielectric constant (ε{sub ∞}), spreading factor (α), average relaxation time (τ{sub 0}) and molecular relaxation time (τ). The dielectric behaviour has been found to be significantly affected due to Ar{sup +} implantation. The possible correlation between this behaviour and the changes induced by the implantation has been discussed.« less

On the physics of both surface overcharging and charge reversal at heterophase interfaces.

PubMed

Wang, Zhi-Yong; Zhang, Pengli; Ma, Zengwei

2018-02-07

The conventional paradigm for characterizing surface overcharging and charge reversal is based on the so-called Stern layer, in which surface dissociation reaction and specific chemical adsorption are assumed to take place. In this article, a series of Monte Carlo simulations have been applied to obtain useful insights into the underlying physics responsible for these two kinds of anomalous phenomena at the interface of two dielectrics, with special emphasis on the case of divalent counterions that are more relevant in natural and biological environments. At a weakly charged surface, it is found that independent of the type of surface charge distribution and the dielectric response of the solution, the overcharging event is universally driven by the ion size-asymmetric effect. Exceptionally, the overcharging still persists when the surface is highly charged but is only restricted to the case of discrete surface charge in a relatively low dielectric medium. As compared to the adsorption onto the homogeneously smeared charge surface that has the same average affinity for counterions, on the other hand, charge reversal under the action of a dielectric response can be substantially enhanced in the discrete surface charge representation due to strong association of counterions with interfacial groups, and the degree of enhancement depends in a nontrivial way on the reduction of the medium dielectric constant and the steric effects of finite ion size. Rather interestingly, the charge reversal is of high relevance to the overcharging of interfaces because the overwhelming interfacial association forces the coions closer to the surface due to their smaller size than the counterions. Upon the addition of a monovalent salt to the solution, the interfacial association with divalent counterions makes surface overcharging and charge reversal widely unaffected, in contrast to the prevailing notion that screening of surface charge of a homogeneous nature is determined by the competitive effects between size-exclusion effects and energetic contributions. Overall, the present work highlights that the complex interplay between the electrostatic and steric interactions should be coupled to the realistic character of surface charge to establish a faithful description of the overcharging and charge reversal at heterophase interfaces.

Nonlinear effects on electrophoresis of a charged dielectric nanoparticle in a charged hydrogel medium

NASA Astrophysics Data System (ADS)

Bhattacharyya, S.; De, Simanta

2016-09-01

The impact of the solid polarization of a charged dielectric particle in gel electrophoresis is studied without imposing a weak-field or a thin Debye length assumption. The electric polarization of a dielectric particle due to an external electric field creates a non-uniform surface charge density, which in turn creates a non-uniform Debye layer at the solid-gel interface. The solid polarization of the particle, the polarization of the double layer, and the electro-osmosis of mobile ions within the hydrogel medium create a nonlinear effect on the electrophoresis. We have incorporated those nonlinear effects by considering the electrokinetics governed by the Stokes-Brinkman-Nernst-Planck-Poisson equations. We have computed the governing nonlinear coupled set of equations numerically by adopting a finite volume based iterative algorithm. Our numerical method is tested for accuracy by comparing with several existing results on free-solution electrophoresis as well as results based on the Debye-Hückel approximation. Our computed result shows that the electrophoretic velocity decreases with the rise of the particle dielectric permittivity constant and attains a saturation limit at large values of permittivity. A significant impact of the solid polarization is found in gel electrophoresis compared to the free-solution electrophoresis.

Empirical Estimation of Local Dielectric Constants: Toward Atomistic Design of Collagen Mimetic Peptides

PubMed Central

Pike, Douglas H.; Nanda, Vikas

2017-01-01

One of the key challenges in modeling protein energetics is the treatment of solvent interactions. This is particularly important in the case of peptides, where much of the molecule is highly exposed to solvent due to its small size. In this study, we develop an empirical method for estimating the local dielectric constant based on an additive model of atomic polarizabilities. Calculated values match reported apparent dielectric constants for a series of Staphylococcus aureus nuclease mutants. Calculated constants are used to determine screening effects on Coulombic interactions and to determine solvation contributions based on a modified Generalized Born model. These terms are incorporated into the protein modeling platform protCAD, and benchmarked on a data set of collagen mimetic peptides for which experimentally determined stabilities are available. Computing local dielectric constants using atomistic protein models and the assumption of additive atomic polarizabilities is a rapid and potentially useful method for improving electrostatics and solvation calculations that can be applied in the computational design of peptides. PMID:25784456

Effect of temperature on the electric breakdown strength of dielectric elastomer

NASA Astrophysics Data System (ADS)

Liu, Lei; Chen, Hualing; Sheng, Junjie; Zhang, Junshi; Wang, Yongquan; Jia, Shuhai

2014-03-01

DE (dielectric elastomer) is one of the most promising artificial muscle materials for its large strain over 100% under driving voltage. However, to date, dielectric elastomer actuators (DEAs) are prone to failure due to the temperature-dependent electric breakdown. Previously studies had shown that the electrical breakdown strength was mainly related to the temperature-dependent elasticity modulus and the permittivity of dielectric substances. This paper investigated the influence of ambient temperature on the electric breakdown strength of DE membranes (VHB4910 3M). The electric breakdown experiment of the DE membrane was conducted at different ambient temperatures and pre-stretch levels. The real breakdown strength was obtained by measuring the deformation and the breakdown voltage simultaneously. Then, we found that with the increase of the environment temperature, the electric breakdown strength decreased obviously. Contrarily, the high pre-stretch level led to the large electric breakdown strength. What is more, we found that the deformations of DEs were strongly dependent on the ambient temperature.

Characteristics of EMI generated by negative metal-positive dielectric voltage stresses due to spacecraft charging

NASA Technical Reports Server (NTRS)

Chaky, R. C.; Inouye, G. T.

1985-01-01

Charging of spacecraft surfaces by the environmental plasma can result in differential potentials between metallic structure and adjacent dielectric surfaces in which the relative polarity of the voltage stress is either negative dielectric/positive metal or negative metal/positive dielectric. Negative metal/positive dielectric is a stress condition that may arise if relatively large areas of spacecraft surface metals are shadowed from solar UV and/or if the UV intensity is reduced as in the situation in which the spacecraft is entering into or leaving eclipse. The results of experimental studies of negative metal/positive dielectric systems are given. Information is given on: enhanced electron emission I-V curves; e(3) corona noise vs e(3) steady-state current; the localized nature of e(3) and negative metal arc discharge currents; negative metal arc discharges at stress thresholds below 1 kilovolt; negative metal arc discharge characteristics; dependence of blowoff arc discharge current on spacecraft capacitance to space (linear dimension); and damage to second surface mirrors due to negative metal arcs.

Photoluminescence from oxygen-doped single-walled carbon nanotubes modified by dielectric metasurfaces

NASA Astrophysics Data System (ADS)

Ma, Xuedan; Doorn, Stephen; Htoon, Han; Brener, Igal

Oxygen dopants in single-walled carbon nanotubes (SWCNTs) have recently been discovered as a novel single photon source enabling single photon generation up to room temperature in the telecom wavelength range. While they are promising for quantum information processing, it is fundamentally important to be able to manipulate their photoluminescence (PL) properties. All-dielectric metasurfaces made from arrays of high index nanoparticles have emerged as an attractive alternative to plasmonic metasurfaces due to their support of both electric and magnetic modes. Their low intrinsic losses at optical frequencies compared to that of plasmonic nanostructures provide a novel setting for tailoring emission from quantum emitters. We couple PL from single oxygen dopants in SWCNTs to the magnetic mode of silicon metasurfaces. Aside from the observation of a PL enhancement due to the Purcell effect, more interestingly, we find that the presence of the silicon metasurfaces significantly modifies the PL polarization of the dopants, which we attribute to near-field polarization modification caused by the silicon metasurfaces. Our finding presents dielectric metasurfaces as potential building blocks of photonic circuits for controlling PL intensity and polarization of single photon sources.

Effects of external mechanical loading on phase diagrams and dielectric properties in epitaxial ferroelectric thin films with anisotropic in-plane misfit strains

NASA Astrophysics Data System (ADS)

Qiu, J. H.; Jiang, Q.

2007-02-01

A phenomenological Landau-Devonshine theory is used to describe the effects of external mechanical loading on equilibrium polarization states and dielectric properties in epitaxial ferroelectric thin films grown on dissimilar orthorhombic substrates which induce anisotropic misfit strains in the film plane. The calculation focuses on single-domain perovskite BaTiO3 and PbTiO3 thin films on the assumption that um1=-um2. Compared with the phase diagrams without external loading, the characteristic features of "misfit strain-misfit strain" phase diagrams at room temperature are the presence of paraelectric phase and the strain-induced ferroelectric to paraelectric phase transition. Due to the external loading, the "misfit strain-stress" and "stress-temperature" phase diagrams also have drastic changes, especially for the vanishing of paraelectric phase in "misfit strain-stress" phase map and the appearance of possible ferroelectric phases. We also investigate the dielectric properties and the tunability of both BaTiO3 and PbTiO3 thin films. We find that the external stress dependence of phase diagrams and dielectric properties largely depends on strain anisotropy as well.

Theory and practical considerations of multilayer dielectric thin-film stacks in Ag-coated hollow waveguides.

PubMed

Bledt, Carlos M; Melzer, Jeffrey E; Harrington, James A

2014-02-01

This analysis explores the theory and design of dielectric multilayer reflection-enhancing thin film stacks based on high and low refractive index alternating layers of cadmium sulfide (CdS) and lead sulfide (PbS) on silver (Ag)-coated hollow glass waveguides (HGWs) for low loss transmission at midinfrared wavelengths. The fundamentals for determining propagation losses in such multilayer thin-film-coated Ag hollow waveguides is thoroughly discussed, and forms the basis for further theoretical analysis presented in this study. The effects on propagation loss resulting from several key parameters of these multilayer thin film stacks is further explored in order to bridge the gap between results predicted through calculation under ideal conditions and deviations from such ideal models that often arise in practice. In particular, the effects on loss due to the number of dielectric thin film layers deposited, deviation from ideal individual layer thicknesses, and surface roughness related scattering losses are presented and thoroughly investigated. Through such extensive theoretical analysis the level of understanding of the underlying loss mechanisms of multilayer thin-film Ag-coated HGWs is greatly advanced, considerably increasing the potential practical development of next-generation ultralow-loss mid-IR Ag/multilayer dielectric-coated HGWs.

Inkjet printed graphene-based field-effect transistors on flexible substrate

NASA Astrophysics Data System (ADS)

Monne, Mahmuda Akter; Enuka, Evarestus; Wang, Zhuo; Chen, Maggie Yihong

2017-08-01

This paper presents the design and fabrication of inkjet printed graphene field-effect transistors (GFETs). The inkjet printed GFET is fabricated on a DuPont Kapton FPC Polyimide film with a thickness of 5 mill and dielectric constant of 3.9 by using a Fujifilm Dimatix DMP-2831 materials deposition system. A layer by layer 3D printing technique is deployed with an initial printing of source and drain by silver nanoparticle ink. Then graphene active layer doped with molybdenum disulfide (MoS2) monolayer/multilayer dispersion, is printed onto the surface of substrate covering the source and drain electrodes. High capacitance ion gel is adopted as the dielectric material due to the high dielectric constant. Then the dielectric layer is then covered with silver nanoparticle gate electrode. Characterization of GFET has been done at room temperature (25°C) using HP-4145B semiconductor parameter analyzer (Hewlett-Packard). The characterization result shows for a voltage sweep from -2 volts to 2 volts, the drain current changes from 949 nA to 32.3 μA and the GFET achieved an on/off ratio of 38:1, which is a milestone for inkjet printed flexible graphene transistor.

Packaging Technology for Dielectric-Coating-Less Heavy Ion Radiation Testing of High-Voltage (HV) Electronic Parts

NASA Technical Reports Server (NTRS)

Woodworth, Andrew; Chen, Liangyu

2017-01-01

Testing high voltage (HV) electronic parts (greater than 300 V) for sudden event effects (SEE) caused by cosmic rays in the space environment, consisting of energetic heavy-ions, and neutron radiation in the upper atmosphere is a crucial step towards using these parts in spacecraft and aircraft. Due to the nature of cosmic radiation and neutrons, electronic parts are tested for SEE without any packaging and/or shielding over the top of the device. In the case of commercial HV parts, the top of the packaging is etched off and then a thin dielectric coating is placed over the part in order to avoid electrical arcing between the device surface and wire bonds and other components. Even though the effects of the thin dielectric layer on SEE testing can be accounted for, the dielectric layer significantly hinders post testing failure analysis. Replicating the test capability of state-of-the-art packaging while eliminating the need for post radiation test processing of the die surface (that obscures failure analysis) is the goal. To that end, a new packaging concept for HV parts has been developed that requires no dielectric coating over the part. Testing of prototype packages used with Schottky diodes (rated at 1200V) has shown no electrical arcing during testing and leakage currents during reverse bias testing are within the manufactures specifications.

Effect of mixing Ce{sup 3+} and Nd{sup 3+} ions in equimolar ratio on structural, optical and dielectric properties on pure cerium orthovanadate and neodymium orthovanadate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verma, Seema; Gupta, Rashmi; Bamzai, K.K., E-mail: kkbamz@yahoo.com

2016-09-15

Highlights: • CeV, NdV and mixed CeNdV nanoparticle prepared by chemical co precipitation method. • With mixing of Ce{sup 3+} and Nd{sup 3+} morphology is totally changed in mixed CeNdV. • Optical band energy of CeV, NdV and CeNdV shows good photocatalyst under UV light. • Conduction mechanism in CeV due to large polaron and small polaron in CeNdV. - Abstract: Cerium orthovanadate, neodymium orthovanadate and mixed cerium neodymium orthovanadate nanoparticles was prepared by co-precipitation method. Powder X-ray diffraction reveals tetragonal zircon structure. Slight increase in lattice parameter, volume and decrease in X-ray density inferred that Ce{sup 3+} and Nd{supmore » 3+} ion replaces each other. Transmission electron microscopy suggests change in morphology with the effect of mixing and validates formation of nanocrystalline material. The infrared transmittance spectrum confirmed the presence of various functional groups. Dielectric properties as function of frequency show dielectric constant and loss tangent decreases with increase in frequency which is due to Maxwell–Wagner type interfacial polarization. The variation of AC conductivity measurement with frequency suggests conduction mechanism due to large polaron hopping in CeV whereas small polaron in mixed CeNdV. The activation energy decreases with rising frequency indicates the conduction mechanism is based on polaron hopping between localized states in disordered manner.« less

Expanded modeling of temperature-dependent dielectric properties for microwave thermal ablation

PubMed Central

Ji, Zhen; Brace, Christopher L

2011-01-01

Microwaves are a promising source for thermal tumor ablation due to their ability to rapidly heat dispersive biological tissues, often to temperatures in excess of 100 °C. At these high temperatures, tissue dielectric properties change rapidly and, thus, so do the characteristics of energy delivery. Precise knowledge of how tissue dielectric properties change during microwave heating promises to facilitate more accurate simulation of device performance and helps optimize device geometry and energy delivery parameters. In this study, we measured the dielectric properties of liver tissue during high-temperature microwave heating. The resulting data were compiled into either a sigmoidal function of temperature or an integration of the time–temperature curve for both relative permittivity and effective conductivity. Coupled electromagnetic–thermal simulations of heating produced by a single monopole antenna using the new models were then compared to simulations with existing linear and static models, and experimental temperatures in liver tissue. The new sigmoidal temperature-dependent model more accurately predicted experimental temperatures when compared to temperature–time integrated or existing models. The mean percent differences between simulated and experimental temperatures over all times were 4.2% for sigmoidal, 10.1% for temperature–time integration, 27.0% for linear and 32.8% for static models at the antenna input power of 50 W. Correcting for tissue contraction improved agreement for powers up to 75 W. The sigmoidal model also predicted substantial changes in heating pattern due to dehydration. We can conclude from these studies that a sigmoidal model of tissue dielectric properties improves prediction of experimental results. More work is needed to refine and generalize this model. PMID:21791728

Structure-property relationships in polymers for dielectric capacitors

NASA Astrophysics Data System (ADS)

Gupta, Sahil

Effective energy storage is a key challenge of the 21st century that has fueled research in the area of energy storage devices. In this dissertation, structure-property relationships have been evaluated for polymers that might be suitable for storing energy in high-energy density, high-temperature capacitors. Firstly, hydroxyl-modified polypropylenes (PPOH) were synthesized by copolymerization of the propylene and undecenyloxytrimethylsilane monomers. The presence of H-bonding in PPOH copolymers increased their glass-transition temperature. Steric hindrance by the comonomer reduced the PP crystal growth rate and crystal size, resulting in a melting point depression. The comonomer was restricted outside the crystalline domains leaving the alpha-monoclinic crystal structure of PP unaffected, but increasing the fold-surface free energy. Crystallization was slower for PPOH copolymers than PP, but exhibited a skewed bell curve as a function of hydroxyl concentration. H-bonding persisted even at melt temperatures up to 250°C resulting in a higher elasticity and viscosity for PPOH copolymers. Secondly, sulfonated poly(ether ether ketone) (HSPEEK) was synthesized by sulfonating PEEK with sulfuric acid, and further neutralized with Zn to obtain ZnSPEEK. The thermal and dielectric properties of SPEEK were compared with PEEK. The glass-transition increased and melting point were high enough to enable the use of polymer at 180°C. The incorporation of sulfonic groups in PEEK increased the dielectric constant. HSPEEK had a higher dielectric constant than ZnSPEEK due to higher dipolar mobility, but the dielectric loss was also higher for HSPEEK due to electrode polarization and DC conduction. These results were consistent with our observations from sulfonated polystyrene (HSPS), which was used as a >model&lang' polymer. Lastly, commercial poly(4-methyl-1-pentene) (P4MP) was characterized to check its viability as a high-temperature polymer dielectric. Thermal stability up to 200°C, high melting point (> 225°C) and melting onset at 160 - 190°C indicated that P4MP could be used at 180 - 200°C. Thin free-standing films (~10 mum) with controlled crystal structure and surface morphology were prepared using blade coating and their drying dynamics were measured using a custom-designed solvent-casting platform. These films were further stretched uniaxially or biaxially, and their effect on the dielectric properties of P4MP was studied.

Enhancement of Resonant Energy Transfer Due to an Evanescent Wave from the Metal.

PubMed

Poudel, Amrit; Chen, Xin; Ratner, Mark A

2016-03-17

The high density of evanescent modes in the vicinity of a metal leads to enhancement of the near-field Förster resonant energy transfer (FRET) rate. We present a classical approach to calculate the FRET rate based on the dyadic Green's function of an arbitrary dielectric environment and consider the nonlocal limit of material permittivity in the case of the metallic half-space and thin film. In a dimer system, we find that the FRET rate is enhanced due to shared evanescent photon modes bridging a donor and an acceptor. Furthermore, a general expression for the FRET rate for multimer systems is derived. The presence of a dielectric environment and the path interference effect enhance the transfer rate, depending on the combination of distance and geometry.

Electronic transport with dielectric confinement in degenerate InN nanowires.

PubMed

Blömers, Ch; Lu, J G; Huang, L; Witte, C; Grützmacher, D; Lüth, H; Schäpers, Th

2012-06-13

In this Letter, we present the size effects on charge conduction in InN nanowires by comprehensive transport studies supported by theoretical analysis. A consistent model for highly degenerate narrow gap semiconductor nanowires is developed. In contrast to common knowledge of InN, there is no evidence of an enhanced surface conduction, however, high intrinsic doping exists. Furthermore, the room-temperature resistivity exhibits a strong increase when the lateral size becomes smaller than 80 nm and the temperature dependence changes from metallic to semiconductor-like. This effect is modeled by donor deactivation due to dielectric confinement, yielding a shift of the donor band to higher ionization energies as the size shrinks.

Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors

NASA Astrophysics Data System (ADS)

Li, Qian; Li, Shilong; Yang, Dehua; Su, Wei; Wang, Yanchun; Zhou, Weiya; Liu, Huaping; Xie, Sishen

2017-10-01

The electrical characteristics of carbon nanotube (CNT) thin-film transistors (TFTs) strongly depend on the properties of the gate dielectric that is in direct contact with the semiconducting CNT channel materials. Here, we systematically investigated the dielectric effects on the electrical characteristics of fully printed semiconducting CNT-TFTs by introducing the organic dielectrics of poly(methyl methacrylate) (PMMA) and octadecyltrichlorosilane (OTS) to modify SiO2 dielectric. The results showed that the organic-modified SiO2 dielectric formed a favorable interface for the efficient charge transport in s-SWCNT-TFTs. Compared to single-layer SiO2 dielectric, the use of organic-inorganic hybrid bilayer dielectrics dramatically improved the performances of SWCNT-TFTs such as mobility, threshold voltage, hysteresis and on/off ratio due to the suppress of charge scattering, gate leakage current and charge trapping. The transport mechanism is related that the dielectric with few charge trapping provided efficient percolation pathways for charge carriers, while reduced the charge scattering. High density of charge traps which could directly act as physical transport barriers and significantly restrict the charge carrier transport and, thus, result in decreased mobile carriers and low device performance. Moreover, the gate leakage phenomenon is caused by conduction through charge traps. So, as a component of TFTs, the gate dielectric is of crucial importance to the manufacture of high quality TFTs from the aspects of affecting the gate leakage current and device operation voltage, as well as the charge carrier transport. Interestingly, the OTS-modified SiO2 allows to directly print horizontally aligned CNT film, and the corresponding devices exhibited a higher mobility than that of the devices with the hybrid PMMA/SiO2 dielectric although the thickness of OTS layer is only ˜2.5 nm. Our present result may provide key guidance for the further development of printed nanomaterial electronics.

Millimeter wave and terahertz dielectric properties of biological materials

NASA Astrophysics Data System (ADS)

Khan, Usman Ansar

Broadband dielectric properties of materials can be employed to identify, detect, and characterize materials through their unique spectral signatures. In this study, millimeter wave, submillimeter wave, and terahertz dielectric properties of biological substances inclusive of liquids, solids, and powders were obtained using Dispersive Fourier Transform Spectroscopy (DFTS). Two broadband polarizing interferometers were constructed to test materials from 60 GHz to 1.2 THz. This is an extremely difficult portion of the frequency spectrum to obtain a material's dielectric properties since neither optical nor microwave-based techniques provide accurate data. The dielectric characteristics of liquids such as cyclohexane, chlorobenzene, benzene, ethanol, methanol, 1,4 dioxane, and 10% formalin were obtained using the liquid interferometer. Subsequently the solid interferometer was utilized to determine the dielectric properties of human breast tissues, which are fixed and preserved in 10% formalin. This joint collaboration with the Tufts New England Medical Center demonstrated a significant difference between the dielectric response of tumorous and non-tumorous breast tissues across the spectrum. Powders such as anthrax, flour, talc, corn starch, dry milk, and baking soda have been involved in a number of security threats and false alarms around the globe in the last decade. To be able to differentiate hoax attacks and serious security threats, the dielectric properties of common household powders were also examined using the solid interferometer to identify the powders' unique resonance peaks. A new sample preparation kit was designed to test the powder specimens. It was anticipated that millimeter wave and terahertz dielectric characterization will enable one to clearly distinguish one powder from the other; however most of the powders had relatively close dielectric responses and only Talc had a resonance signature recorded at 1.135 THz. Furthermore, due to polarization and birefringence effects, it was determined that one can not utilize the dielectric properties of powder-containing packages to differentiate hoax attacks and serious security threats.

Quantitative investigation on the critical thickness of the dielectric shell for metallic nanoparticles determined by the plasmon decay length.

PubMed

Li, Anran; Lim, Xinyi; Guo, Lin; Li, Shuzhou

2018-04-20

Inert dielectric shells coating the surface of metallic nanoparticles (NPs) are important for enhancing the NPs' stability, biocompatibility, and realizing targeting detection, but they impair NPs' sensing ability due to the electric fields damping. The dielectric shell not only determines the distance of the analyte from the NP surface, but also affects the field decay. From a practical point of view, it is extremely important to investigate the critical thickness of the shell, beyond which the NPs are no longer able to effectively detect the analytes. The plasmon decay length of the shell-coated NPs determines the critical thickness of the coating layer. Extracting from the exponential fitting results, we quantitatively demonstrate that the critical thickness of the shell exhibits a linear dependence on the NP volume and the dielectric constants of the shell and the surrounding medium, but only with a small variation influenced by the NP shape where the dipole resonance is dominated. We show the critical thickness increases with enlarging the NP sizes, or increasing the dielectric constant differences between the shell and surrounding medium. The findings are essential for applications of shell-coated NPs in plasmonic sensing.

Quantitative investigation on the critical thickness of the dielectric shell for metallic nanoparticles determined by the plasmon decay length

NASA Astrophysics Data System (ADS)

Li, Anran; Lim, Xinyi; Guo, Lin; Li, Shuzhou

2018-04-01

Inert dielectric shells coating the surface of metallic nanoparticles (NPs) are important for enhancing the NPs’ stability, biocompatibility, and realizing targeting detection, but they impair NPs’ sensing ability due to the electric fields damping. The dielectric shell not only determines the distance of the analyte from the NP surface, but also affects the field decay. From a practical point of view, it is extremely important to investigate the critical thickness of the shell, beyond which the NPs are no longer able to effectively detect the analytes. The plasmon decay length of the shell-coated NPs determines the critical thickness of the coating layer. Extracting from the exponential fitting results, we quantitatively demonstrate that the critical thickness of the shell exhibits a linear dependence on the NP volume and the dielectric constants of the shell and the surrounding medium, but only with a small variation influenced by the NP shape where the dipole resonance is dominated. We show the critical thickness increases with enlarging the NP sizes, or increasing the dielectric constant differences between the shell and surrounding medium. The findings are essential for applications of shell-coated NPs in plasmonic sensing.

Use of Cu+1 dopant and it's doping effects on polyaniline conducting system in water and tetrahydrofuran

NASA Astrophysics Data System (ADS)

Ali, Vazid; Kaur, Raminder; Kamal, Neel; Singh, Sukhmehar; Jain, S. C.; Kang, H. P. S.; Zulfequar, M.; Husain, M.

2006-04-01

The structural modification and properties of polymeric materials are of utmost importance in deciding their applications. In the present study, the synthesis of polyaniline (PANI) has been carried out via chemical oxidation in acidic medium by potassium-dichromate and the yield of synthesized polyaniline was found to be 75 80%. The copper per chlorate tetrabenzonitrile salt (CuClO4·4BN) used for chemical doping in synthesized polyaniline is stable in organic solvent like acetonitrile (AN) and benzonitrile (BN). The effect of Cu+1 oxidation state (dopant) in polyaniline has been characterized by FTIR. Electrical and dielectric measurements show the decrease in the intensity of the Cu+1 salt signal and the appearance of a radical signal due to the formation of oxidative coupled in polymeric species. Electrical and dielectric properties of doped polyaniline samples show significant changes due to the effect of dopant (CuClO4·4BN). It is observed that the conductivity is contributing both by formation of ionic complex and particularly dominated by electronic due to the mobility of charge carriers along the polyaniline chain.

A large-scale study of the ultrawideband microwave dielectric properties of normal breast tissue obtained from reduction surgeries.

PubMed

Lazebnik, Mariya; McCartney, Leah; Popovic, Dijana; Watkins, Cynthia B; Lindstrom, Mary J; Harter, Josephine; Sewall, Sarah; Magliocco, Anthony; Booske, John H; Okoniewski, Michal; Hagness, Susan C

2007-05-21

The efficacy of emerging microwave breast cancer detection and treatment techniques will depend, in part, on the dielectric properties of normal breast tissue. However, knowledge of these properties at microwave frequencies has been limited due to gaps and discrepancies in previously reported small-scale studies. To address these issues, we experimentally characterized the wideband microwave-frequency dielectric properties of a large number of normal breast tissue samples obtained from breast reduction surgeries at the University of Wisconsin and University of Calgary hospitals. The dielectric spectroscopy measurements were conducted from 0.5 to 20 GHz using a precision open-ended coaxial probe. The tissue composition within the probe's sensing region was quantified in terms of percentages of adipose, fibroconnective and glandular tissues. We fit a one-pole Cole-Cole model to the complex permittivity data set obtained for each sample and determined median Cole-Cole parameters for three groups of normal breast tissues, categorized by adipose tissue content (0-30%, 31-84% and 85-100%). Our analysis of the dielectric properties data for 354 tissue samples reveals that there is a large variation in the dielectric properties of normal breast tissue due to substantial tissue heterogeneity. We observed no statistically significant difference between the within-patient and between-patient variability in the dielectric properties.

All-Dielectric Colored Metasurfaces with Silicon Mie Resonators.

PubMed

Proust, Julien; Bedu, Frédéric; Gallas, Bruno; Ozerov, Igor; Bonod, Nicolas

2016-08-23

The photonic resonances hosted by nanostructures provide vivid colors that can be used as color filters instead of organic colors and pigments in photodetectors and printing technology. Metallic nanostructures have been widely studied due to their ability to sustain surface plasmons that resonantly interact with light. Most of the metallic nanoparticles behave as point-like electric multipoles. However, the needs of an another degree of freedom to tune the color of the photonic nanostructure together with the use of a reliable and cost-effective material are growing. Here, we report a technique to imprint colored images based on silicon nanoparticles that host low-order electric and magnetic Mie resonances. The interplay between the electric and magnetic resonances leads to a large palette of colors. This all-dielectric fabrication technique offers the advantage to use cost-effective, reliable, and sustainable materials to provide vivid color spanning the whole visible spectrum. The interest and potential of this all-dielectric printing technique are highlighted by reproducing at a micrometer scale a Mondrian painting.

Enhanced absorption of microwave radiations through flexible polyvinyl alcohol-carbon black/barium hexaferrite composite films

NASA Astrophysics Data System (ADS)

Kumar, Sushil; Datt, Gopal; Santhosh Kumar, A.; Abhyankar, A. C.

2016-10-01

Flexible microwave absorber composite films of carbon black (CB)/barium hexaferrite nano-discs (BaF) in polyvinyl alcohol (PVA) matrix, fabricated by gel casting, exhibit ˜99.5% attenuation of electromagnetic waves in the entire 8-18 GHz (X and Ku-band) range. The X-ray diffraction and Raman spectroscopy studies confirm the formation of CB-BaF-PVA composite films. The electromagnetic absorption properties of composite films are found to be enhanced with CB content due to the synergetic effect of multiple dielectric and magnetic losses. The 25 wt. % CB grafted PVA-BaF flexible composite films with a thickness of ˜ 2 mm exhibit effective electromagnetic shielding of 23.6 dB with a dominant contribution from absorption mechanism (SEA ˜ 21 dB). The dielectric properties of composite films are further discussed by using the Debye model. The detailed analysis reveals that major contribution to dielectric losses is from dipolar and interfacial polarizations, whereas magnetic losses are predominantly from domain wall displacement.

Structural, dielectric and magnetic studies of Mn doped Y-type barium hexaferrite (Ba2Mg2Fe12O22)

NASA Astrophysics Data System (ADS)

Abdullah, Md. F.; Pal, P.; Mohapatra, S. R.; Yadav, C. S.; Kaushik, S. D.; Singh, A. K.

2018-04-01

The polycrystalline single phase Ba2Mg2Fe12O22 (BMF) and Ba2Mg2Fe11.52Mn0.48O22 (BMFM) were prepared using conventional solid state reaction route. We report the modification in structural, dielectric and magnetic properties of BMF due to 4% Mn doping at Fe site. Phase purity of both sample are confirmed by the Reitveld refinement of XRD data. Temperature dependent dielectric study shows decrease in dielectric constant (ɛ') and dielectric loss (tan δ) due to 4% Mn doping in parent sample. The ferrimagnetic to paramagnetic transition temperature (Tc) in doped sample decreases from 277°C to 150°C. Room temperature magnetization measurement shows ferrimagnetic behavior for both the samples. We have fitted the saturation magnetization data at 300 K by using least square method which confirms the enhancement of saturation magnetization and magnetic anisotropy constant in doped sample.

Carbon black networking in elastomers monitored by simultaneous rheological and dielectric investigations.

PubMed

Steinhauser, Dagmar; Möwes, Markus; Klüppel, Manfred

2016-12-14

The rheo-dielectric response of carbon black filled elastomer melts is investigated by dielectric relaxation spectroscopy in the frequency range from 0.1 Hz up to 10 MHz during oszillatory shearing in a plate-plate rheometer. Various concentrations and types of carbon blacks dispersed in a non-crosslinked EPDM melt are considered. It is demonstrated that during heat treatment at low strain amplitude a pronounced flocculation of filler particles takes place leading to a successive increase of the shear modulus and conductivity. Followed up by a strain sweep, the filler network breaks up and both quantities decrease simultaneously with increasing strain amplitude. Two relaxation times, obtained from a Cole-Cole fit of the dielectric spectra, are identified, which both decrease strongly with increasing flocculation time. This behaviour is analyzed in the frame of fractal network models, describing the effect of structural disorder of the conducting carbon black network on the diffusive charge transport. Significant deviations from the predictions of percolation theory are observed, which are traced back to a superimposed cluster-cluster aggregation process (CCA). During flocculation, a universal scaling behaviour holds between the conductivity and the corresponding high frequency relaxation time, which fits all the measured data. The scaling exponent agrees fairly well with the prediction obtained from CCA. It is demonstrated that the underlying basic mechanism is a change of the correlation length of the filler network, i.e. the size of the fractal heterogeneities. This decreases during flocculation due to the formation of additional conductive paths, making the system more homogeneous. An addition less pronounced effect is found from nanoscopic gaps between adjacent filler particles, which decrease during flocculation. The same universal scaling behaviour, as obtained for flocculation, is found for temperature-dependent dielectric measurements of the cured crosslinked systems, which are heated from room temperature up to 200 °C. Thereby, the conductivity decreases significantly and the relaxation time increases, indicating that the filler network breaks up randomly due to the thermal expansion of the rubber matrix.

Carbon black networking in elastomers monitored by simultaneous rheological and dielectric investigations

NASA Astrophysics Data System (ADS)

Steinhauser, Dagmar; Möwes, Markus; Klüppel, Manfred

2016-12-01

The rheo-dielectric response of carbon black filled elastomer melts is investigated by dielectric relaxation spectroscopy in the frequency range from 0.1 Hz up to 10 MHz during oszillatory shearing in a plate-plate rheometer. Various concentrations and types of carbon blacks dispersed in a non-crosslinked EPDM melt are considered. It is demonstrated that during heat treatment at low strain amplitude a pronounced flocculation of filler particles takes place leading to a successive increase of the shear modulus and conductivity. Followed up by a strain sweep, the filler network breaks up and both quantities decrease simultaneously with increasing strain amplitude. Two relaxation times, obtained from a Cole-Cole fit of the dielectric spectra, are identified, which both decrease strongly with increasing flocculation time. This behaviour is analyzed in the frame of fractal network models, describing the effect of structural disorder of the conducting carbon black network on the diffusive charge transport. Significant deviations from the predictions of percolation theory are observed, which are traced back to a superimposed cluster-cluster aggregation process (CCA). During flocculation, a universal scaling behaviour holds between the conductivity and the corresponding high frequency relaxation time, which fits all the measured data. The scaling exponent agrees fairly well with the prediction obtained from CCA. It is demonstrated that the underlying basic mechanism is a change of the correlation length of the filler network, i.e. the size of the fractal heterogeneities. This decreases during flocculation due to the formation of additional conductive paths, making the system more homogeneous. An addition less pronounced effect is found from nanoscopic gaps between adjacent filler particles, which decrease during flocculation. The same universal scaling behaviour, as obtained for flocculation, is found for temperature-dependent dielectric measurements of the cured crosslinked systems, which are heated from room temperature up to 200 °C. Thereby, the conductivity decreases significantly and the relaxation time increases, indicating that the filler network breaks up randomly due to the thermal expansion of the rubber matrix.

Effects of interband transitions on Faraday rotation in metallic nanoparticles.

PubMed

Wysin, G M; Chikan, Viktor; Young, Nathan; Dani, Raj Kumar

2013-08-14

The Faraday rotation in metallic nanoparticles is considered based on a quantum model for the dielectric function ϵ(ω) in the presence of a DC magnetic field B. We focus on effects in ϵ(ω) due to interband transitions (IBTs), which are important in the blue and ultraviolet for noble metals used in plasmonics. The dielectric function is found using the perturbation of the electron density matrix due to the optical field of the incident electromagnetic radiation. The calculation is applied to transitions between two bands (d and p, for example) separated by a gap, as one finds in gold at the L-point of the Fermi surface. The result of the DC magnetic field is a shift in the effective optical frequency causing IBTs by ±μBB/ħ, where opposite signs are associated with left/right circular polarizations. The Faraday rotation for a dilute solution of 17 nm diameter gold nanoparticles is measured and compared with both the IBT theory and a simpler Drude model for the bound electron response. Effects of the plasmon resonance mode on Faraday rotation in nanoparticles are also discussed.

Homogeneous/Inhomogeneous-Structured Dielectrics and their Energy-Storage Performances.

PubMed

Yao, Zhonghua; Song, Zhe; Hao, Hua; Yu, Zhiyong; Cao, Minghe; Zhang, Shujun; Lanagan, Michael T; Liu, Hanxing

2017-05-01

The demand for dielectric capacitors with higher energy-storage capability is increasing for power electronic devices due to the rapid development of electronic industry. Existing dielectrics for high-energy-storage capacitors and potential new capacitor technologies are reviewed toward realizing these goals. Various dielectric materials with desirable permittivity and dielectric breakdown strength potentially meeting the device requirements are discussed. However, some significant limitations for current dielectrics can be ascribed to their low permittivity, low breakdown strength, and high hysteresis loss, which will decrease their energy density and efficiency. Thus, the implementation of dielectric materials for high-energy-density applications requires the comprehensive understanding of both the materials design and processing. The optimization of high-energy-storage dielectrics will have far-reaching impacts on the sustainable energy and will be an important research topic in the near future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A new quadrature annular resonator for 3 T MRI based on artificial-dielectrics.

PubMed

Mikhailovskaya, Anna A; Shchelokova, Alena V; Dobrykh, Dmitry A; Sushkov, Ivan V; Slobozhanyuk, Alexey P; Webb, Andrew

2018-06-01

Dielectric resonators have previously been constructed for ultra-high frequency magnetic resonance imaging and microscopy. However, it is challenging to design these dielectric resonators at clinical field strengths due to their intrinsically large dimensions, especially when using materials with moderate permittivity. Here we propose and characterize a novel approach using artificial-dielectrics which reduces substantially the required outer diameter of the resonator. For a resonator designed to operate in a 3 Tesla scanner using water as the dielectric, a reduction in outer diameter of 37% was achieved. When used in an inductively-coupled wireless mode, the sensitivity of the artificial-dielectric resonator was measured to be slightly higher than that of a standard dielectric resonator operating in its degenerate circularly-polarized hybrid electromagnetic modes (HEM 11 ). This study demonstrates the first application of an artificial-dielectric approach to MR volume coil design. Copyright © 2018 Elsevier Inc. All rights reserved.

Processing of Al2O3/SrTiO3/PDMS Composites With Low Dielectric Loss

NASA Astrophysics Data System (ADS)

Yao, J. L.; Guo, M. J.; Qi, Y. B.; Zhu, H. X.; Yi, R. Y.; Gao, L.

2018-05-01

Polydimethylsiloxane (PDMS) is widely used in the electrical and electronic industries due to its excellent electrical insulation and biocompatible characteristics. However, the dielectric constant of pure PDMS is very low which restricts its applications. Herein, we report a series of PDMS/Al2O3/strontium titanate (ST) composites with high dielectric constant and low loss prepared by a simple experimental method. The composites exhibit high dielectric constant (relative dielectric constant is 4) after the composites are coated with insulated Al2O3 particles, and the dielectric constant gets further improved for composites with ST particles (dielectric constant reaches 15.5); a lower dielectric loss (tanδ= 0.05) is also found at the same time which makes co-filler composites suitable for electrical insulation products, and makes the experimental method more interesting in modern teaching.

A new quadrature annular resonator for 3 T MRI based on artificial-dielectrics

NASA Astrophysics Data System (ADS)

Mikhailovskaya, Anna A.; Shchelokova, Alena V.; Dobrykh, Dmitry A.; Sushkov, Ivan V.; Slobozhanyuk, Alexey P.; Webb, Andrew

2018-06-01

Dielectric resonators have previously been constructed for ultra-high frequency magnetic resonance imaging and microscopy. However, it is challenging to design these dielectric resonators at clinical field strengths due to their intrinsically large dimensions, especially when using materials with moderate permittivity. Here we propose and characterize a novel approach using artificial-dielectrics which reduces substantially the required outer diameter of the resonator. For a resonator designed to operate in a 3 Tesla scanner using water as the dielectric, a reduction in outer diameter of 37% was achieved. When used in an inductively-coupled wireless mode, the sensitivity of the artificial-dielectric resonator was measured to be slightly higher than that of a standard dielectric resonator operating in its degenerate circularly-polarized hybrid electromagnetic modes (HEM11). This study demonstrates the first application of an artificial-dielectric approach to MR volume coil design.

Nonlocality and particle-clustering effects on the optical response of composite materials with metallic nanoparticles

NASA Astrophysics Data System (ADS)

Chen, C. W.; Chung, H. Y.; Chiang, H.-P.; Lu, J. Y.; Chang, R.; Tsai, D. P.; Leung, P. T.

2010-10-01

The optical properties of composites with metallic nanoparticles are studied, taking into account the effects due to the nonlocal dielectric response of the metal and the coalescing of the particles to form clusters. An approach based on various effective medium theories is followed, and the modeling results are compared with those from the cases with local response and particles randomly distributed through the host medium. Possible observations of our modeling results are illustrated via a calculation of the transmission of light through a thin film made of these materials. It is found that the nonlocal effects are particularly significant when the particles coalesce, leading to blue-shifted resonances and slightly lower values in the dielectric functions. The dependence of these effects on the volume fraction and fractal dimension of the metal clusters is studied in detail.

Terahertz artificial birefringence and tunable phase shifter based on dielectric metasurface with compound lattice.

PubMed

Ji, Yun-Yun; Fan, Fei; Chen, Meng; Yang, Lei; Chang, Sheng-Jiang

2017-05-15

A dielectric metasurface with line-square compound lattice structure has been fabricated and demonstrated in the terahertz (THz) regime by the THz time-domain spectroscopy and numerical simulation. A polarization dependent electromagnetically induced transparency (EIT) effect is achieved in this metasurface due to the mode coupling and interference between the resonance modes in line and square subunits of the metasurface. Accompany with the EIT effect, a large artificial birefringence effect between two orthogonal polarization states is also observed in this compound metasurface, of which birefringence is over 0.6. Furthermore, the liquid crystals are filled on the surface of this dielectric metasurface to fabricate an electrically tunable THz LC phase shifter. The experimental results show that its tunable phase shift under the biased electric field reaches 0.33π, 1.8 times higher than the bare silicon, which confirms the enhancement role of THz microstructure on the LC phase shift in the THz regime. The large birefringence phase shift of this compound metasurface and its LC tunable phase shifter will be of great significance for potential applications in THz polarization and phase devices.

Impedance response and dielectric relaxation in co-precipitation derived ferrite (Ni,Zn)Fe{sub 2}O{sub 4} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, D. G.; Tang, X. G.; Liu, Q. X.

2013-06-07

Dielectric spectra and magnetization hysteresis loops were used to investigate the grain size effect with temperature on the electrical and magnetic response of co-precipitation derived spinel (Ni{sub 0.5}Zn{sub 0.5})Fe{sub 2}O{sub 4} (NZFO) ceramics. Remarkable dielectric relaxation phenomena of non-Debye type have been observed in each NZFO ceramics as confirmed by two kinds of Cole-Cole plots of the 1100 Degree-Sign C sintered samples, mainly due to the electron-hopping mechanism between n-type and p-type carriers and interfacial ion effect when applied an increase of temperature. The high and low response of grain and grain-boundary regions were determined by modeling the impedance experimentalmore » results on two equivalent RC circuits taking into account grain deep trap states. By employing the modified Arrhenius equation, activation energy values of different sintering temperatures were calculated and analyzed in combination with oxygen vacancy. In addition, the magnetization of various sintering temperature samples is dominated by cation distribution and surface effect in different particle ranges.« less

Long Term Effects of Poultry Litter on Soil Physical and Chemical Properties in Cotton Plots

NASA Technical Reports Server (NTRS)

Surrency, J.; Tsegaye, T.; Coleman, T.; Fahsi, A.; Reddy, C.

1998-01-01

Poultry litter and compost can alter the moisture holding capacity of a soil. These organic materials can also increase the nutrient status of a soil during the decomposition process by microbial actions. The objective of this study was to evaluate the effect of poultry litter and compost on the dielectric constant and moisture holding capacity of soil. The Delta-T theta-probe was used to measure volumetric soil water content and the apparent dielectric constant of the upper 6-cm of the soil profile. Soil texture, pH, and organic matter were also determined for each plot. Results of these analyses indicated that the pH of the soil ranged from 6.4 to 7.7 and the volumetric soil moisture content ranged from 0.06 to 0.18 cu m/cu m for the upper 6-cm of the soil profile. The effect of poultry litter and compost on soil properties resulted in an increase in the volumetric moisture content and dielectric constant of the soil due to the improvement of the soil structure.

Influence of interfacial viscosity on the dielectrophoresis of drops

NASA Astrophysics Data System (ADS)

Mandal, Shubhadeep; Chakraborty, Suman

2017-05-01

The dielectrophoresis of a Newtonian uncharged drop in the presence of an axisymmetric nonuniform DC electric field is studied analytically. The present study is focused on the effects of interfacial viscosities on the dielectrophoretic motion and shape deformation of an isolated suspended drop. The interfacial viscosities generate surface-excess viscous stress which is modeled as a two-dimensional Newtonian fluid which obeys the Boussinesq-Scriven constitutive law with constant values of interfacial tension, interfacial shear, and dilatational viscosities. In the regime of small drop deformation, we have obtained analytical solution for the drop velocity and deformed shape by neglecting surface charge convection and fluid inertia. Our study demonstrates that the drop velocity is independent of the interfacial shear viscosity, while the interfacial dilatational viscosity strongly affects the drop velocity. The interfacial viscous effects always retard the dielectrophoretic motion of a perfectly conducting/dielectric drop. Notably, the interfacial viscous effects can retard or augment the dielectrophoretic motion of a leaky dielectric drop depending on the electrohydrodynamic properties. The shape deformation of a leaky dielectric drop is found to decrease (or increase) due to interfacial shear (or dilatational) viscosity.

Evolution of dielectric function of Al-doped ZnO thin films with thermal annealing: effect of band gap expansion and free-electron absorption.

PubMed

Li, X D; Chen, T P; Liu, Y; Leong, K C

2014-09-22

Evolution of dielectric function of Al-doped ZnO (AZO) thin films with annealing temperature is observed. It is shown that the evolution is due to the changes in both the band gap and the free-electron absorption as a result of the change of free-electron concentration of the AZO thin films. The change of the electron concentration could be attributed to the activation of Al dopant and the creation/annihilation of the donor-like defects like oxygen vacancy in the thin films caused by annealing.

Optimized operation of dielectric laser accelerators: Multibunch

NASA Astrophysics Data System (ADS)

Hanuka, Adi; Schächter, Levi

2018-06-01

We present a self-consistent analysis to determine the optimal charge, gradient, and efficiency for laser driven accelerators operating with a train of microbunches. Specifically, we account for the beam loading reduction on the material occurring at the dielectric-vacuum interface. In the case of a train of microbunches, such beam loading effect could be detrimental due to energy spread, however this may be compensated by a tapered laser pulse. We ultimately propose an optimization procedure with an analytical solution for group velocity which equals to half the speed of light. This optimization results in a maximum efficiency 20% lower than the single bunch case, and a total accelerated charge of 1 06 electrons in the train. The approach holds promise for improving operations of dielectric laser accelerators and may have an impact on emerging laser accelerators driven by high-power optical lasers.

Ab Initio study on structural, electronic, magnetic and dielectric properties of LSNO within Density Functional Perturbation Theory

NASA Astrophysics Data System (ADS)

Petersen, John; Bechstedt, Friedhelm; Furthmüller, Jürgen; Scolfaro, Luisa

LSNO (La2-xSrxNiO4) is of great interest due to its colossal dielectric constant (CDC) and rich underlying physics. While being an antiferromagnetic insulator, localized holes are present in the form of stripes in the Ni-O planes which are commensurate with the inverse of the Sr concentration. The stripes are a manifestation of charge density waves with period approximately 1/x and spin density waves with period approximately 2/x. Here, the spin ground state is calculated via LSDA + U with the PAW method implemented in VASP. Crystal structure and the effective Hubbard U parameter are optimized before calculating ɛ∞ within the independent particle approximation. ɛ∞ and the full static dielectric constant (including the lattice polarizability) ɛ0 are calculated within Density Functional Perturbation Theory.

Multiple electrical phase transitions in Al substituted barium hexaferrite

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Supriya, Sweety; Kar, Manoranjan

2017-12-01

Barium hexaferrite is known to be a very good ferromagnetic material. However, it shows very good dielectric properties, i.e., the dielectric constant is comparable to that of the ferroelectric material. However, its crystal symmetry does not allow it to be a ferroelectric material. Hence, the electrical properties have revived the considerable research interest on these materials, not only for academic interest, but also for technological applications. There are a few reports on temperature dependent dielectric behavior of these materials. However, the exact cause of dielectric as well as electrical conductivity is yet to be established. Hence, Al (very good conducting material) substituted barium hexaferrite (BaFe12-xAlxO19, x = 0.0-4.0) has been prepared by following the modified sol-gel method to understand the ac and DC electrical properties of these materials. The crystal structure and parameters have been studied by employing the XRD and FTIR techniques. There are two transition temperatures, which have been observed in the temperature dependent ac dielectric and DC resistivity measurement. The response of dielectric behaviors to temperature is similar to that of the ferroelectric material; however, the dielectric polarization is due to the polaron hopping, which is evident from the DC resistivity analysis. Hence, the present observations lead to understand the electrical properties of barium hexaferrite. The frequency dependent dielectric dispersion can be understood by the modified Debye model. More interestingly, the dielectric constant decreases and DC resistivity increases with the increase in the Al concentration, which has the correlation between bond length modifications in the crystal due to substitution.

Complex oxide thin films for microelectronics

NASA Astrophysics Data System (ADS)

Suvorova, Natalya

The rapid scaling of the device dimensions, namely in metal oxide semiconductor field effect transistor (MOSFET), is reaching its fundamental limit which includes the increase in allowable leakage current due to direct tunneling with decrease of physical thickness of SiO2 gate dielectric. The significantly higher relative dielectric constant (in the range 9--25) of the gate dielectric beyond the 3.9 value of silicon dioxide will allow increasing the physical thickness. Among the choices for the high dielectric constant (K) materials for future generation MOSFET application, barium strontium titanate (BST) and strontium titanate (STO) possess one of the highest attainable K values making them the promising candidates for alternative gate oxide. However, the gate stack engineering does not imply the simple replacement of the SiO2 with the new dielectric. Several requirements should be met for successful integration of a new material. The major one is a production of high level of interface states (Dit) compared to that of SiO 2 on Si. An insertion of a thin SiO2 layer prior the growth of high-K thin film is a simple solution that helps to limit reaction with Si substrate and attains a high quality interface. However, the combination of two thin films reduces the overall K of the dielectric stack. An optimization of the SiO2 underlayer in order to maintain the interface quality yet minimize the effect on K is the focus of this work. The results from our study are presented with emphasis on the key process parameters that improve the dielectric film stack. For in-situ growth characterization of BST and STO films sputter deposited on thermally oxidized Si substrates spectroscopic ellipsometry in combination with time of flight ion scattering and recoil spectrometry have been employed. Studies of material properties have been complemented with analytical electron microscopy. To evaluate the interface quality the electrical characterization has been employed using capacitance-voltage and conductance-voltage measurements. Special attention was given to the extraction of static dielectric constant of BST and STO from the multiple film stack. The K value was found to be sensitive to the input parameters such as dielectric constant and thickness of interface layers.

Diurnal changes in the dielectric properties and water status of eastern hemlock and red spruce from Howland, ME

NASA Technical Reports Server (NTRS)

Salas, W. A.; Ranson, K. J.; Rock, B. N.; Moss, D. M.

1991-01-01

The diurnal characteristics of microwave dielectric properties and water potential of two conifer species were investigated in July and September, 1990. P-band and C-band radial dielectric profiles of hemlock and red spruce, as well as hemlock diurnal water potential and dielectric profiles, are presented. The resulting radial dielectric profiles matched the regions of the functional sapwood (water transport component of the active xylem) in both species such that the sapwood was characterized by a higher dielectric than the bark and heartwood tissues. This is probably due to characteristic differences in the water content of each tissue. As the hemlocks progressed through their diurnal water potential pattern, the dielectric profile remained static until mid-afternoon. As the tension in the water column relaxed (2 to 3 bars) the dielectric constant decreased by 30 to 40 percent. There are several possible explanations for this phenomenon, and these may relate to the dependency of the dielectric measurements on temperature, salinity, and volumetric water content.

Grain size effect on the giant dielectric constant of CaCu3Ti4O12 nanoceramics prepared by mechanosynthesis and spark plasma sintering

NASA Astrophysics Data System (ADS)

Ahmad, Mohamad M.; Yamada, Koji

2014-04-01

In the present work, CaCu3Ti4O12 (CCTO) nanoceramics with different grain sizes were prepared by spark plasma sintering (SPS) at different temperatures (SPS-800, SPS-900, SPS-975, and SPS-1050) of the mechanosynthesized nano-powder. Structural and microstructural properties were studied by XRD and field-emission scanning electron microscope measurements. The grain size of CCTO nanoceramics increases from 80 nm to ˜200 nm for the ceramics sintered at 800 °C and 975 °C, respectively. Further increase of SPS temperature to 1050 °C leads to micro-sized ceramics of 2-3 μm. The electrical and dielectric properties of the investigated ceramics were studied by impedance spectroscopy. Giant dielectric constant was observed in CCTO nanoceramics. The dielectric constant increases with increasing the grain size of the nanoceramics with values of 8.3 × 103, 2.4 × 104, and 3.2 × 104 for SPS-800, SPS-900, and SPS-975, respectively. For the micro-sized SPS-1050 ceramics, the dielectric constant dropped to 2.14 × 104. The dielectric behavior is interpreted within the internal barrier layer capacitance picture due to the electrical inhomogeneity of the ceramics. Besides the resistive grain boundaries that are usually observed in CCTO ceramics, domain boundaries appear as a second source of internal layers in the current nanoceramics.

Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor.

PubMed

Campos, Antonio; Riera-Galindo, Sergi; Puigdollers, Joaquim; Mas-Torrent, Marta

2018-05-09

Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

Giant dielectric response and low dielectric loss in Al{sub 2}O{sub 3} grafted CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajabtabar-Darvishi, A.; Center for Surface and Nanoanalytics; Bayati, R., E-mail: reza.bayati@intel.com, E-mail: mbayati@ncsu.edu, E-mail: wdfei@hit.edu.cn

2015-03-07

This study sheds light on the effect of alumina on dielectric constant and dielectric loss of novel CaCu{sub 3}Ti{sub 4}O{sub 12} composite ceramics. Alumina, at several concentrations, was deposited on the surface of CaCu{sub 3}Ti{sub 4}O{sub 12} particles via sol-gel technique. The dielectric constant significantly increased for all frequencies and the dielectric loss substantially decreased for low and intermediate frequencies. These observations were attributed to the change in characteristics of grains and grain boundaries. It was found that the insulating properties of the grain boundaries are improved following the addition of Al{sub 2}O{sub 3}. The relative density of CaCu{sub 3}Ti{submore » 4}O{sub 12}/Al{sub 2}O{sub 3} composite ceramics decreased compared to the pure CaCu{sub 3}Ti{sub 4}O{sub 12} and the grain size was greatly changed with the alumina content affecting the dielectric properties. With the addition of alumina into CaCu{sub 3}Ti{sub 4}O{sub 12}, tighter interfaces formed. The 6%- and 10%-alumina ceramics showed the minimum dielectric loss and the maximum dielectric constant, respectively. Both the dielectric constant and loss tangent decreased in the 20%-alumina ceramic due to the formation of CuO secondary phase. It was revealed that Al serves as an electron acceptor decreasing the electron concentration, if Al{sup 3+} ions substitute for Ti{sup 4+} ions, and as an electron donor increasing the electron concentration, if Al{sup 3+} ions substitute for Ca{sup 2+} ions. We established a processing-microstructure-properties paradigm which opens new avenues for novel applications of CaCu{sub 3}Ti{sub 4}O{sub 12}/Al{sub 2}O{sub 3} composite ceramics.« less

Exploration of dielectric relaxations of a room temperature anti-ferroelectric liquid crystal mixture

NASA Astrophysics Data System (ADS)

Dwivedi, Aanchal; Verma, Rohit; Dhar, R.; Dabrowski, R.

2018-05-01

Dielectric characterization of a technologically important room temperature anti-ferroelectric liquid crystal (AFLC) mixture has been carried out as a function of temperature and frequency. The mixture has a phase sequence of I-SmA*-SmC*-SmCA* -SmIA* -Cr. Electrical study for the planar anchoring of the molecules demonstrates seven relaxation mechanisms in various mesophases of the mixture. Dielectric spectrum of paraelectric SmA* phase exhibits a relaxation mechanism due to the tilt fluctuation of the molecules. In ferroelectric SmC* phase, Goldstone mode has been observed due to the fluctuation in azimuthal angle. In antiferroelectric SmCA*and hexatic SmIA* phases two relaxation mechanisms are observed due to bond orientation order & anti-phase fluctuation and rotation around the short axes respectively.

Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

NASA Astrophysics Data System (ADS)

Bolshakov, Pavel; Zhao, Peng; Azcatl, Angelica; Hurley, Paul K.; Wallace, Robert M.; Young, Chadwin D.

2017-07-01

A high quality Al2O3 layer is developed to achieve high performance in top-gate MoS2 transistors. Compared with top-gate MoS2 field effect transistors on a SiO2 layer, the intrinsic mobility and subthreshold slope were greatly improved in high-k backside layer devices. A forming gas anneal is found to enhance device performance due to a reduction in the charge trap density of the backside dielectric. The major improvements in device performance are ascribed to the forming gas anneal and the high-k dielectric screening effect of the backside Al2O3 layer. Top-gate devices built upon these stacks exhibit a near-ideal subthreshold slope of ˜69 mV/dec and a high Y-Function extracted intrinsic carrier mobility (μo) of 145 cm2/V.s, indicating a positive influence on top-gate device performance even without any backside bias.

Microdosimetric study for nanosecond pulsed electric fields on a cell circuit model with nucleus.

PubMed

Denzi, Agnese; Merla, Caterina; Camilleri, Paola; Paffi, Alessandra; d'Inzeo, Guglielmo; Apollonio, Francesca; Liberti, Micaela

2013-10-01

Recently, scientific interest in electric pulses, always more intense and shorter and able to induce biological effects on both plasma and nuclear membranes, has greatly increased. Hence, microdosimetric models that include internal organelles like the nucleus have assumed increasing importance. In this work, a circuit model of the cell including the nucleus is proposed, which accounts for the dielectric dispersion of all cell compartments. The setup of the dielectric model of the nucleus is of fundamental importance in determining the transmembrane potential (TMP) induced on the nuclear membrane; here, this is demonstrated by comparing results for three different sets of nuclear dielectric properties present in the literature. The results have been compared, even including or disregarding the dielectric dispersion of the nucleus. The main differences have been found when using pulses shorter than 10 ns. This is due to the fact that the high spectral components of the shortest pulses are differently taken into account by the nuclear membrane transfer functions computed with and without nuclear dielectric dispersion. The shortest pulses are also the most effective in porating the intracellular structures, as confirmed by the time courses of the TMP calculated across the plasma and nuclear membranes. We show how dispersive nucleus models are unavoidable when dealing with pulses shorter than 10 ns because of the large spectral contents arriving above 100 MHz, i.e., over the typical relaxation frequencies of the dipolar mechanism of the molecules constituting the nuclear membrane and the subcellular cell compartments.

Structure and Differentiated Electrical Characteristics of M1/2La1/2Cu3Ti4O12 (M = Li, Na, K) Ceramics Prepared by Sol-Gel Method

NASA Astrophysics Data System (ADS)

Liu, Zhanqing; Yang, Zupei

2017-10-01

New M1/2La1/2Cu3Ti4O12 (M = Li, Na, K) ceramics based on partial substitution of Li+, Na+, and K+ for La3+ in La2/3Cu3Ti4O12 (LCTO) have been prepared by a sol-gel method, and the effects of Li+, Na+, and K+ on the microstructure and electrical properties investigated in detail, revealing different results depending on the substituent. The cell parameter increased with increasing radius of the substituent ion (Li+, Na+, K+). Li1/2La1/2Cu3Ti4O12 (LLCTO) ceramic showed better frequency and temperature stability, but the dielectric constant decreased and the third abnormal dielectric peak disappeared from the dielectric temperature spectrum. Na1/2La1/2Cu3Ti4O12 (NLCTO) ceramic exhibited higher dielectric constant and better frequency and temperature stability, and displayed the second dielectric relaxation in electric modulus plots. The performance of K1/2La1/2Cu3Ti4O12 (KLCTO) ceramic was deteriorated. These different microstructures and electrical properties may be due to the effect of different defect structures generated in the ceramic as well as grain size. This work represents the first analysis and comparison of these remarkable differences in the electrical behavior of ceramics obtained by partial substitution of Li+, Na+, and K+ for La3+ in LCTO.

Full-time response of starch subjected to microwave heating.

PubMed

Fan, Daming; Wang, Liyun; Zhang, Nana; Xiong, Lei; Huang, Luelue; Zhao, Jianxin; Wang, Mingfu; Zhang, Hao

2017-06-21

The effect of non-ionizing microwave radiation on starch is due to a gelatinization temperature range that changes starch structure and properties. However, the changes in starch upon microwave heating are observable throughout the heating process. We compared the effects on starch heating by microwaves to the effects by rapid and regular conventional heating. Our results show that microwave heating promotes the rapid rearrangement of starch molecules at low temperatures; starch showed a stable dielectric response and a high dielectric constant. Microwave heating changed the Cole-Cole curve and the polarization of starch suspension at low temperatures. A marked transition at 2.45 GHz resulted in a double-polarization phenomenon. At temperatures below gelatinization, microwave-induced dielectric rearrangement and changes in the polarization characteristics of starch suspensions reduced the absorption properties; at temperatures above gelatinization, these characteristics became consistent with conventional heating. Throughout the heating process, microwaves change the electrical response and polarization characteristics of the starch at low temperatures, but on the macro level, there is no enhancement of the material's microwave absorption properties. In contrast, with the warming process, the starch exhibited a "blocking effect", and the absorption properties of the starch quickly returned to the level observed in conductive heating after gelatinization.

Dielectric Anistropy, Elastic Constants, and Threshold Voltage Measurements of Gold-nanoparticle Colloids in Nematic 5CB

NASA Astrophysics Data System (ADS)

Visco, Angelo; Foust, Jon; Belobradich, Joseph; Mahmood, Rizwan; Zapien, Donald

We have explored electro-optical and thermal properties of gold nanoparticles (GNPs) colloids in 4-cyano- 4'-pentylbiphenyl (5CB) liquid crystals (LCs). GNP's do not readily disperse in a LC host and, so, have been treated with either, 1-Hexane-thiol, 1-Dodecane-thiol, or 1-Octadecyl-thiol. This treatment suppresses the aggregation of GNPs within the 5CB host to a threshold of approximately 0.7% GNP by weight. Our measurements on dodecanethiol and hexanethiol treated GNPs showed an unusual, steep trough in the dielectric anisotropy and elastic constants at a critical concentration of 0.0862 wt. % GNPs in 5CB. Due to the order parameter, we have observed a peak in the transition temperature at the same critical concentration. Above the critical concentration the transition temperatures, dielectric anisotropy, and elastic constants level off to within experimental uncertainty. Measurements of dodecanethiol treated GNPs in 5CB reveal distinctions in the rate of change in dielectric anisotropy as compared to hexanethiol treated GNPs in 5CB. This effect is possibly due to the increased carbon concentration in dodeccanethiol compared to hexanethiol. Attempts to mix the Smectic A (SmA), 8CB liquid crystal using our hexanethiol and dodecanethiol GNPs were unsuccessful for particle sizes of 100nm and 28nm. We suspect that this is due to an insufficient length of the carbon-chain and U.V. spectroscopy measurements may prove useful in characterizing the resulting aggregation. We hope the system will be helpful in modifying the properties of mesophases that may ultimately results in developing new electro-optical devices. Acknowledgements: The funding for the project was provided by Slippery Rock University (2015-2016).

Excited state electron transfer in systems with a well-defined geometry. [cyclophane

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaufmann, K.J.

1980-12-01

The effect of temperature, dielectric strength and ligand on the structure of the mesopyropheophorbide cyclophanes will be studied. ESR, NMR, emission and absorption spectroscopy, as well as circular dichroism will be used. The changes in structure will be correlated with changes in the photochemical activity. Electron acceptors such as benzoquinone will be utilized to stabilize the charge separation. Charge separation in porphyrin quinone dimers will also be studied. It was found that electron transfer in the cyclophane system is relatively slow. This is presumably due to an orientation requirement for fast electron transfer. Solvent dielectric also is important in producingmore » a charge separation. Decreasing the temperature effects the yield of charge transfer, but not the kinetics.« less

Effect of Sintering Temperature on Dielectric Properties of Iron Deficient Nickel-Ferrite

NASA Astrophysics Data System (ADS)

Rani, Renu; Singh, Sangeeta; Juneja, J. K.; Prakash, Chandra; Raina, K. K.

2011-11-01

Nickel Ferrite among all the magneto ceramic materials have been studied very much due to its large number of applications. But there is a large scope of modification of its properties. Thus people still working on it for improvisation of its properties via compositional and structural modifications. Present paper reporting the preparation and characterization of iron deficient Nickel ferrite for different sintering temperature. Ferrite samples having the general formula NiFe1.98O4 were prepared using the standard ceramic method. The phase formation was confirmed by X-ray diffraction technique. The effect of sintering temperature on the electrical properties and resistivity was studied. The data shows that dielectric properties are highly dependent on the sintering temperature.

Effects of surface dielectric barrier discharge on aerodynamic characteristic of train

NASA Astrophysics Data System (ADS)

Dong, Lei; Gao, Guoqiang; Peng, Kaisheng; Wei, Wenfu; Li, Chunmao; Wu, Guangning

2017-07-01

High-speed railway today has become an indispensable means of transportation due to its remarkable advantages, including comfortability, convenience and less pollution. The increase in velocity makes the air drag become the main source of energy consumption, leading to receiving more and more concerns. The surface dielectric barrier discharge has shown some unique characteristics in terms of active airflow control. In this paper, the influences of surface dielectric barrier discharge on the aerodynamic characteristics of a scaled train model have been studied. Aspects of the discharge power consumption, the temperature distribution, the velocity of induced flow and the airflow field around the train model were considered. The applied AC voltage was set in the range of 20 kV to 28 kV, with a fixed frequency of 9 kHz. Results indicated that the discharge power consumption, the maximum temperature and the induced flow velocity increased with increasing applied voltage. Mechanisms of applied voltage influencing these key parameters were discussed from the point of the equivalent circuit. The airflow field around the train model with different applied voltages was observed by the smoke visualization experiment. Finally, the effects of surface dielectric barrier discharge on the train drag reduction with different applied voltages were analyzed.

Prediction on dielectric strength and boiling point of gaseous molecules for replacement of SF6.

PubMed

Yu, Xiaojuan; Hou, Hua; Wang, Baoshan

2017-04-15

Developing the environment-friendly insulation gases to replace sulfur hexafluoride (SF 6 ) has attracted considerable experimental and theoretical attentions but without success. A computational methodology was presented herein for prediction on dielectric strength and boiling point of arbitrary gaseous molecules in the purpose of molecular design and screening. New structure-activity relationship (SAR) models have been established by combining the density-dependent properties of the electrostatic potential surface, including surface area and the statistical variance of the surface potentials, with the molecular properties including polarizability, electronegativity, and hardness. All the descriptors in the SAR models were calculated using density functional theory. The substitution effect of SF 6 by various functional groups was studied systematically. It was found that CF 3 is the most effective functional group to improve the dielectric strength due to the large surface area and polarizability. However, all the substitutes exhibit higher boiling points than SF 6 because the molecular hardness decreases. The balance between E r and T b could be achieved by minimizing the local polarity of the molecules. SF 5 CN and SF 5 CFO were found to be the potent candidates to replace SF 6 in view of their large dielectric strengths and low boiling points. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Achieving polydimethylsiloxane/carbon nanotube (PDMS/CNT) composites with extremely low dielectric loss and adjustable dielectric constant by sandwich structure

NASA Astrophysics Data System (ADS)

Fan, Benhui; Liu, Yu; He, Delong; Bai, Jinbo

2018-01-01

Sandwich-structured composites of polydimethylsiloxane/carbon nanotube (PDMS/CNT) bulk between two neat PDMS thin films with different thicknesses are prepared by the spin-coating method. Taking advantage of CNT's percolation behavior, the composite keeps relatively high dielectric constant (ɛ' = 40) at a low frequency (at 100 Hz). Meanwhile, due to the existence of PDMS isolated out-layers which limits the conductivity of the composite, the composite maintains an extremely low dielectric loss (tan δ = 0.01) (at 100 Hz). Moreover, the same matrix of the out-layer and bulk can achieve excellent interfacial adhesion, and the thickness of the coating layer can be controlled by a multi-cycle way. Then, based on the experimental results, the calculation combining the percolation theory and core-shell model is used to analyze the thickness effect of the coating layer on ɛ'. The obtained relationship between the ɛ' of the composite and the thickness of the coating layer can help to optimize the sandwich structure in order to obtain the adjustable ɛ' and the extremely low tan δ.

Thermodynamic potentials in anisotropic and nonlinear dielectrics

NASA Astrophysics Data System (ADS)

Parravicini, Jacopo

2018-07-01

The variation of total energy, entropy, Helmoltz free energy due to the application of a static electric field is calculated and discussed, under suitable conditions, in the case of a dielectric with either anisotropic or nonlinear response. The proposed approach starts from Fröhlich's theory of dielectric thermodynamics and, by analyzing its assumptions, provides a method to generalize it. The obtained relationships can be employed for describing the thermodynamics of different classes of dielectric materials, also in experimental investigations. Specifically, the anisotropy and nonlinearity conditions are considered and relative examples are indicated and discussed.

Small polaronic hole hopping mechanism and Maxwell-Wagner relaxation in NdFeO3

NASA Astrophysics Data System (ADS)

Ahmad, I.; Akhtar, M. J.; Younas, M.; Siddique, M.; Hasan, M. M.

2012-10-01

In the modern micro-electronics, transition metal oxides due to their colossal values of dielectric permittivity possess huge potential for the development of capacitive energy storage devices. In the present work, the dielectric permittivity and the effects of temperature and frequency on the electrical transport properties of polycrystalline NdFeO3, prepared by solid state reaction method, are discussed. Room temperature Mossbauer spectrum confirms the phase purity, octahedral environment for Fe ion, and high spin state of Fe3+ ion. From the impedance spectroscopic measurements, three relaxation processes are observed, which are related to grains, grain boundaries (gbs), and electrode-semiconductor contact in the measured temperature and frequency ranges. Decrease in resistances and relaxation times of the grains and grain boundaries with temperature confirms the involvement of thermally activated conduction mechanisms. Same type of charge carriers (i.e., small polaron hole hopping) have been found responsible for conduction and relaxation processes through the grain and grain boundaries. The huge value of the dielectric constant (˜8 × 103) at high temperature and low frequency is correlated to the Maxwell-Wagner relaxation due to electrode-sample contact.

Dielectric relaxation of barium strontium titanate and application to thin films for DRAM capacitors

NASA Astrophysics Data System (ADS)

Baniecki, John David

This thesis examines the issues associated with incorporating the high dielectric constant material Barium Strontium Titanate (BSTO) in to the storage capacitor of a dynamic random access memory (DRAM). The research is focused on two areas: characterizing and understanding the factors that control charge retention in BSTO thin films and modifying the electrical properties using ion implantation. The dielectric relaxation of BSTO thin films deposited by metal-organic chemical vapor deposition (MOCVD) is investigated in the time and frequency domains. It is shown that the frequency dispersion of the complex capacitance of BSTO thin films can be understood in terms of a power-law frequency dependence from 1mHz to 20GHz. From the correspondence between the time and frequency domain measurements, it is concluded that the power-law relaxation currents extend back to the nano second regime of DRAM operation. The temperature, field, and annealing dependence of the dielectric relaxation currents are also investigated and mechanisms for the observed power law relaxation are explored. An equivalent circuit model of a high dielectric constant thin film capacitor is developed based on the electrical measurements and implemented in PSPICE. Excellent agreement is found between the experimental and simulated electrical characteristics showing the utility of the equivalent circuit model in simulating the electrical properties of high dielectric constant thin films. Using the equivalent circuit model, it is shown that the greatest charge loss due to dielectric relaxation occurs during the first read after a refresh time following a write to the opposite logic state for a capacitor that has been written to the same logic state for a long time (opposite state write charge loss). A theoretical closed form expression that is a function of three material parameters is developed which estimates the opposite state write charge loss due to dielectric relaxation. Using the closed form expression, and BSTO thin film electrical characteristics, the charge loss due to dielectric relaxation is estimated to be 6--12% of the initial charge stored on the capacitor plates for MOCVD BSTO thin films with Pt electrodes after a post top electrode anneal in oxygen. In contrast, it is shown that the charge loss due to steady state leakage is only 0.0125--0.125% of the initial charge stored on the capacitor plates. Charge retention is shown to depend strongly on the annealing conditions. Annealing MOCVD BSTO thin films with Pt electrodes in forming gas (95% Ar 5% H2) increases charge loss due to dielectric relaxation to as much as 60%. Ion implantation is used to dope BSTO thin films with Mn. X-ray diffraction and transmission electron microscopy (TEM) shows ion implantation significantly damages the film leaving only short-range order, but post-implant annealing heals the damage. Capacitance recovery after post-implant annealing is as high as 94% for 15 nm BSTO films. At low implant doses, the Mn doped films have substantially lower leakage (up to a factor of ten lower) and only slightly higher relaxation currents and dielectric loss indicating that ion implantation may be a potentially viable way of introducing dopants into high dielectric constant thin films for future DRAM applications.

Dispersion of Dielectric Permittivity in a Nanocrystalline Cellulose-Triglycine Sulfate Composite at Low and Ultralow Frequencies

NASA Astrophysics Data System (ADS)

Thu'o'ng, Nguyen Hoai; Sidorkin, A. S.; Milovidova, S. D.

2018-03-01

The dispersion of dielectric permittivity in nanocrystalline cellulose-triglycine sulfate composites is studied in the range of frequencies from 10-3 to 106 Hz, at temperatures varying from room temperature to the temperature of phase transition in this composite (54°C), in weak electric fields (1 V cm-1). Two behaviors for the dielectric dispersion are identified in the studied frequency range: at ultralow frequencies (10-3-10 Hz), the dispersion is due to Maxwell-Wagner polarization, while at higher frequencies (10-106 Hz), the dispersion is due to the movement of domain walls in the embedded triglycine sulfate crystallites. An additional peak in the temperature-dependent profiles of dielectric permittivity is detected at lower temperatures in freshly prepared samples of the considered composite; we associate it with the presence of residual water in these samples.

Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures

PubMed Central

Li, Jianping; Zhao, Mingxi; Liu, Yongsheng; Chai, Nan; Ye, Fang; Qin, Hailong; Cheng, Laifei; Zhang, Litong

2017-01-01

SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries. PMID:28773015

Concentration dependence of molal conductivity and dielectric constant of 1-alcohol electrolytes using the compensated arrhenius formalism.

PubMed

Fleshman, Allison M; Petrowsky, Matt; Frech, Roger

2013-05-02

The molal conductivity of liquid electrolytes with low static dielectric constants (ε(s) < 10) decreases to a minimum at low concentrations (region I) and increases to a maximum at higher concentrations (region II) when plotted against the square root of the concentration. This behavior is investigated by applying the compensated Arrhenius formalism (CAF) to the molal conductivity, Λ, of a family of 1-alcohol electrolytes over a broad concentration range. A scaling procedure is applied that results in an energy of activation (E(a)) and an exponential prefactor (Λ0) that are both concentration dependent. It is shown that the increasing molal conductivity in region II results from the combined effect of (1) a decrease in the energy of activation calculated from the CAF, and (2) an inherent concentration dependence in the exponential prefactor that is partly due to the dielectric constant.

Electronic, Mechanical, and Dielectric Properties of Two-Dimensional Atomic Layers of Noble Metals

NASA Astrophysics Data System (ADS)

Kapoor, Pooja; Kumar, Jagdish; Kumar, Arun; Kumar, Ashok; Ahluwalia, P. K.

2017-01-01

We present density functional theory-based electronic, mechanical, and dielectric properties of monolayers and bilayers of noble metals (Au, Ag, Cu, and Pt) taken with graphene-like hexagonal structure. The Au, Ag, and Pt bilayers stabilize in AA-stacked configuration, while the Cu bilayer favors the AB stacking pattern. The quantum ballistic conductance of the noble-metal mono- and bilayers is remarkably increased compared with their bulk counterparts. Among the studied systems, the tensile strength is found to be highest for the Pt monolayer and bilayer. The noble metals in mono- and bilayer form show distinctly different electron energy loss spectra and reflectance spectra due to the quantum confinement effect on going from bulk to the monolayer limit. Such tunability of the electronic and dielectric properties of noble metals by reducing the degrees of freedom of electrons offers promise for their use in nanoelectronics and optoelectronics applications.

Extension of photonic band gap in one-dimensional ternary metal-dielectric photonic crystal

NASA Astrophysics Data System (ADS)

Pandey, G. N.; Thapa, Khem B.

2018-05-01

In this paper, the photonic band gap structure in the visible and near infrared for a ternary metal dielectric photonic crystal has been theoretically investigated. At the normal incidence, the high reflectance range can be significantly enlarged at a thicker metal film. The transmission of the structure containing Cu has large compared to the other metals like Al and Ag metals. The transmission properties of the metal are dependent upon the value of the plasma frequency. In this paper we consider the effect of the variation of the thickness of the metal on the reflection bands of ternary metallic-dielectric photonic crystal (MDPC). Finally we find that the enlargement of band gap in MDPC is due to the addition of increase of the thickness of metallic film at normal incidence. All the theoretical calculations are made based on the transfer matrix method together with the Drude model of metal.

Ultrasonic synthesis of In-doped SnS nanoparticles and their physical properties

NASA Astrophysics Data System (ADS)

Jamali-Sheini, Farid; Cheraghizade, Mohsen; Yousefi, Ramin

2018-05-01

Indium (In)-doped Tin (II) Sulfide (SnS) nanoparticles (NPs) were synthesized by an ultra-sonication method and their optical, electrical, dielectric and photocatalytic properties were investigated. XRD patterns of the obtained NPs indicated formation of orthorhombic polycrystalline SnS. Field emission scanning electron microscopy exhibited flower-like NPs with particle sizes below 100 nm for both SnS and In-doped SnS samples. Optical analysis showed a decrease in energy band gap of SnS NPs upon In doping. In addition, electrical results demonstrated p-type nature of the synthesized SnS NPs and enhanced electrical conductivity of the NPs due to increased tin vacancy. Dielectric experiments on SnS NPs suggested an electronic polarizations effect to be responsible for changing dielectric properties of the particles, in terms of frequency. Finally, photocatalytic experiments revealed that high degradation power can be obtained using In-doped SnS NPs.

Effect of Zn doping on structural and dielectric properties of tetragonal Ni{sub 1-x}Zn{sub x}Fe{sub 2}O{sub 4} (0.0 ≤ x ≤ 0.5)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lone, S. A.; Dar, M. A.; Kumar, A.

2015-06-24

A series of Ni-Zn ferrite with compositional formula Ni{sub 1-x}Zn{sub x}Fe{sub 2}O{sub 4} (0.0 ≤ x ≤ 0.5) were prepared by solid-state reaction route. The influence of the Zn content on the structural and dielectric properties of NiFe{sub 2}O{sub 4} was investigated using X-ray powder diffraction (XRD), Raman spectroscopy and dielectric measurements. XRD analysis reveals that the samples are polycrystalline single-phase cubic spinel in structure excluding the presence of any secondary phase corresponding to any structure. Slight variation in the lattice parameter of Zn doped NiFe{sub 2}O{sub 4} has been observed due to difference in ionic radii of cations. Ramanmore » analysis reveals the doublet like nature of A{sub 1g} mode for all synthesized samples. Small shift in Raman modes and increment in the line width has been observed with the doping ions. Furthermore, room temperature dielectric properties of all the prepared samples have been reported. It is observed that for each sample the dielectric constant decreases with an increase of frequency and becomes constant at higher frequencies.« less

Dielectric relaxation behavior and impedance studies of Cu2+ ion doped Mg - Zn spinel nanoferrites

NASA Astrophysics Data System (ADS)

Choudhary, Pankaj; Varshney, Dinesh

2018-03-01

Cu2+ substituted Mg - Zn nanoferrites is synthesized by low temperature fired sol gel auto combustion method. The spinel nature of nanoferrites was confirmed by lab x-ray technique. Williamson - Hall (W-H) analysis estimate the average crystallite size (22.25-29.19 ± 3 nm) and micro strain induced Mg0.5Zn0.5-xCuxFe2O4 (0.0 ≤ x ≤ 0.5). Raman scattering measurements confirm presence of four active phonon modes. Red shift is observed with enhanced Cu concentration. Dielectric parameters exhibit a non - monotonous dispersion with Cu concentration and interpreted with the support of hopping mechanism and Maxwell-Wagner type of interfacial polarization. The ac conductivity of nanoferrites increases with raising the frequency. Complex electrical modulus reveals a non - Debye type of dielectric relaxation present in nanoferrites. Reactive impedance (Z″) detected an anomalous behavior and is related with resonance effect. Complex impedance demonstrates one semicircle corresponding to the intergrain (grain boundary) resistance and also explains conducting nature of nanoferrites. For x = 0.2, a large semicircle is observed revealing the ohmic nature (minimum potential drop at electrode surface). Dielectric properties were improved for nanoferrites with x = 0.2 and is due to high dielectric constant, conductivity and minimum loss value (∼0.009) at 1 MHz.

Dielectric Spectroscopy Analysis of Aged EVOH films with Application to Deterioration of Food Packaging Materials

NASA Astrophysics Data System (ADS)

Hoeller, Timothy

2007-06-01

Samples of EVOH films from compositions of 29 - 44 mol% ethylene content were exposed to thermal aging with and without light exposure. The results of Dielectric Spectroscopy on select samples showed Cole-Cole plots of skewed dielectric constant indicating multiple distributions of dipole relaxation times. The onset for decreases in dielectric response occurs earlier in samples exposed to elevated temperature under light exposure. Lower permittivity is exhibited in samples of higher ethylene content. Results from heat exposed samples are presented. Colorimetric analysis indicates only a slight film yellowing in one case. Raman spectroscopy on untreated films discerns changes in the C-C-O stretch associated with the alcohol. The effects of aging on microstructure may cause hindrance of molecular motion from moisture desorption. Slight material degradation occurs from film hardening presumably due to crosslinking. An electrical circuit model of the conduction processes associated with the EVOH films is presented. Dielectric analysis shows promise for monitoring material changes related to deterioration. We are also using these methods to understand Fluorescence Imaging which has been recently released for paper and plastic materials analysis. Future work may include refinement of these techniques for identification of changes in material properties correlated to packaging material barrier resistance.

Structural, dielectric and impedance studies of polycrystalline La0.6Dy0.2Ca0.2MnO3

NASA Astrophysics Data System (ADS)

Nandan, K. R.; Kumar, A. Ruban

2017-05-01

Polycrystalline materials of Dy doped La1-xCaxMnO3 were prepared by Sol-Gel technique using citric acid as a chelating agent at 900°C. The compound was analyzed by powder X-ray diffraction technique and confirmed to be single phased orthorhombic perovskite structure with space group Pnma. From the dielectric and impedance studies confirmed the existence of dielectric relaxation and presence of space charge were observed from the dielectric constant and impedance plots respectively and confirms the existence of relaxation due to oxygen vacancy. Cole-cole plot confirms the presence of dielectric relaxation and grain contribution in the synthesized sample.

A new insight on the dynamics of sodium dodecyl sulfate aqueous micellar solutions by dielectric spectroscopy.

PubMed

Lanzi, Leandro; Carlà, Marcello; Lanzi, Leonardo; Gambi, Cecilia M C

2009-02-01

Aqueous sodium dodecyl sulfate micellar solutions were investigated by a recently developed double-differential dielectric spectroscopy technique in the frequency range 100 MHz-3 GHz at 22 degrees C, in the surfactant concentration range 29.8-524 mM, explored for the first time above 104 mM. The micellar contribution to dielectric spectra was analyzed according to three models containing, respectively, a single Debye relaxation, a Cole-Cole relaxation and a double Debye relaxation. The single Debye model is not accurate enough. Both Cole-Cole and double Debye models fit well the experimental dielectric spectra. With the double Debye model, two characteristic relaxation times were identified: the slower one, in the range 400-900 ps, is due to the motion of counterions bound to the micellar surface (lateral motion); the faster one, in the range 100-130 ps, is due to interfacial bound water. Time constants and amplitudes of both processes are in fair agreement with Grosse's theoretical model, except at the largest concentration values, where interactions between micelles increase. For each sample, the volume fraction of bulk water and the effect of bound water as well as the conductivity in the low frequency limit were computed. The bound water increases as the surfactant concentration increases, in quantitative agreement with the micellar properties. The number of water molecules per surfactant molecule was also computed. The conductivity values are in agreement with Kallay's model over the whole surfactant concentration range.

The role of volume charging of dielectrics in the occurrence of electrostatic discharges on spacecraft

NASA Astrophysics Data System (ADS)

Chirskaia, Natalia; Novikov, Lev; Voronina, Ekaterina

2016-07-01

Most recent works consider the occurrence of electrostatic discharges (ESD) on the surface of the spacecraft due to spacecraft charging as a consequence of its surface interaction with the surrounding space plasma and solar radiation [1]. At the same time, low-orbit spacecraft are simultaneously exposed to the hot magnetospheric plasma with the typical energies of the particles ~ 0.1 - 50 keV and to the particles of the Earth radiation belts (ERB) with a typical energy in the range of 0.1-10 MeV. Electrons of ERB with these energies penetrate into spacecraft dielectrics on the order of a few millimeters in depth and create an embedded charge with their own electric field. It has been shown in a number of papers that exactly a volume charge of the electrons of ERB can be the cause of ESD on spacecraft [2,3]. In this work we present the results of calculation of the dose rate and, correspondingly, the radiation conductivity in a typical spacecraft dielectrics, arising under the action of the hot magnetospheric plasma and electrons of ERB. Using software packages based on Monte Carlo methods and on the solution of equations of charge transport in spacecraft dielectrics, it is shown that in a number of areas of the Earth's magnetosphere the ESD can occur under the action of the ERB electrons. The results of present work can provide a basis for creation of the standard, characterizing the emergence of ESR on spacecraft due to volume charging of dielectrics and describing the methods of laboratory tests of spacecraft dielectrics. L.S. Novikov, A.A. Makletsov, and V.V. Sinolits, Comparison of Coulomb-2, NASCAP-2K, MUSCAT and SPIS codes for geosynchronous spacecraft charging, Advances in Space Research, 2016, V. 57, Is. 2, pp. 671-680. Wrenn G.L., Smith R.J.K. The ESD Threat to GEO Satellites: Empirical Models for Observed Effects Due to Both Surface and Internal Charging. Proc. ESA Symp. "Environment Modelling for Space-based Applications", ESTEC Noordwijk, The Netherlands, 1996, pp. 121-124. Paulmier, T., Dirassen, B., Arnaout, M., Payan, D., Balcon, N., Radiation-Induced Conductivity of Space Used Polymers Under High Energy Electron Irradiation, Plasma Science, IEEE Transactions, 2015, V. 43, No. 9, pp.2907-2914.

Dielectric Characteristics of Microstructural Changes and Property Evolution in Engineered Materials

NASA Astrophysics Data System (ADS)

Clifford, Jallisa Janet

Heterogeneous materials are increasingly used in a wide range of applications such as aerospace, civil infrastructure, fuel cells and many others. The ability to take properties from two or more materials to create a material with properties engineered to needs is always very attractive. Hence heterogeneous materials are evolving into more complex formulations in multiple disciplines. Design of microstructure at multiple scales control the global functional properties of these materials and their structures. However, local microstructural changes do not directly cause a proportional change to the global properties (such as strength and stiffness). Instead, local changes follow an evolution process including significant interactions. Therefore, in order to understand property evolution of engineered materials, microstructural changes need to be effectively captured. Characterizing these changes and representing them by material variables will enable us to further improve our material level understanding. In this work, we will demonstrate how microstructural features of heterogeneous materials can be described quantitatively using broadband dielectric spectroscopy (BbDS). The frequency dependent dielectric properties can capture the change in material microstructure and represent these changes in terms of material variables, such as complex permittivity. These changes in terms of material properties can then be linked to a number of different conditions, such as increasing damage due to impact or fatigue. Two different broadband dielectric spectroscopy scanning modes are presented: bulk measurements and continuous scanning to measure dielectric property change as a function of position across the specimen. In this study, we will focus on ceramic materials and fiber reinforced polymer matrix composites as test bed material systems. In the first part of the thesis, we will present how different micro-structural design of porous ceramic materials can be captured quantitatively using BbDS. These materials are typically used in solid oxide fuel cells (SOFC). Results show significant effect of microstructural design on material properties at multiple temperatures (up to 800 °C). In the later part of the thesis, we will focus on microstructural changes of fiber reinforced composite materials due to impact and static loading. The changes in dielectric response can then be linked to the bulk mechanical properties of the material and various damage modes. Observing trends in dielectric response enables us to further determine local mechanisms and distribution of properties throughout the damaged specimens. A 3D X-ray microscope and a digital microscope have been used to visualize these changes in material microstructure and validate experimental observations. The increase in damage observed in the material microstructure can then also be linked to the changes in dielectric response. Results show that BbDS is an extremely useful tool for identifying microstructural changes within a heterogeneous material and particularly useful in relating remaining properties. Dielectric material variables can be used directly in property degradation laws and help develop a framework for future predictive modeling methodologies.

A hollow coaxial cable Fabry-Pérot resonator for liquid dielectric constant measurement

NASA Astrophysics Data System (ADS)

Zhu, Chen; Zhuang, Yiyang; Chen, Yizheng; Huang, Jie

2018-04-01

We report, for the first time, a low-cost and robust homemade hollow coaxial cable Fabry-Pérot resonator (HCC-FPR) for measuring liquid dielectric constant. In the HCC design, the traditional dielectric insulating layer is replaced by air. A metal disk is welded onto the end of the HCC serving as a highly reflective reflector, and an open cavity is engineered on the HCC. After the open cavity is filled with the liquid analyte (e.g., water), the air-liquid interface acts as a highly reflective reflector due to large impedance mismatch. As a result, an HCC-FPR is formed by the two highly reflective reflectors, i.e., the air-liquid interface and the metal disk. We measured the room temperature dielectric constant for ethanol/water mixtures with different concentrations using this homemade HCC-FPR. Monitoring the evaporation of ethanol in ethanol/water mixtures was also conducted to demonstrate the ability of the sensor for continuously monitoring the change in dielectric constant. The results revealed that the HCC-FPR could be a promising evaporation rate detection platform with high performance. Due to its great advantages, such as high robustness, simple configuration, and ease of fabrication, the novel HCC-FPR based liquid dielectric constant sensor is believed to be of high interest in various fields.

A hollow coaxial cable Fabry-Pérot resonator for liquid dielectric constant measurement.

PubMed

Zhu, Chen; Zhuang, Yiyang; Chen, Yizheng; Huang, Jie

2018-04-01

We report, for the first time, a low-cost and robust homemade hollow coaxial cable Fabry-Pérot resonator (HCC-FPR) for measuring liquid dielectric constant. In the HCC design, the traditional dielectric insulating layer is replaced by air. A metal disk is welded onto the end of the HCC serving as a highly reflective reflector, and an open cavity is engineered on the HCC. After the open cavity is filled with the liquid analyte (e.g., water), the air-liquid interface acts as a highly reflective reflector due to large impedance mismatch. As a result, an HCC-FPR is formed by the two highly reflective reflectors, i.e., the air-liquid interface and the metal disk. We measured the room temperature dielectric constant for ethanol/water mixtures with different concentrations using this homemade HCC-FPR. Monitoring the evaporation of ethanol in ethanol/water mixtures was also conducted to demonstrate the ability of the sensor for continuously monitoring the change in dielectric constant. The results revealed that the HCC-FPR could be a promising evaporation rate detection platform with high performance. Due to its great advantages, such as high robustness, simple configuration, and ease of fabrication, the novel HCC-FPR based liquid dielectric constant sensor is believed to be of high interest in various fields.

Development of a soft untethered robot using artificial muscle actuators

NASA Astrophysics Data System (ADS)

Cao, Jiawei; Qin, Lei; Lee, Heow Pueh; Zhu, Jian

2017-04-01

Soft robots have attracted much interest recently, due to their potential capability to work effectively in unstructured environment. Soft actuators are key components in soft robots. Dielectric elastomer actuators are one class of soft actuators, which can deform in response to voltage. Dielectric elastomer actuators exhibit interesting attributes including large voltage-induced deformation and high energy density. These attributes make dielectric elastomer actuators capable of functioning as artificial muscles for soft robots. It is significant to develop untethered robots, since connecting the cables to external power sources greatly limits the robots' functionalities, especially autonomous movements. In this paper we develop a soft untethered robot based on dielectric elastomer actuators. This robot mainly consists of a deformable robotic body and two paper-based feet. The robotic body is essentially a dielectric elastomer actuator, which can expand or shrink at voltage on or off. In addition, the two feet can achieve adhesion or detachment based on the mechanism of electroadhesion. In general, the entire robotic system can be controlled by electricity or voltage. By optimizing the mechanical design of the robot (the size and weight of electric circuits), we put all these components (such as batteries, voltage amplifiers, control circuits, etc.) onto the robotic feet, and the robot is capable of realizing autonomous movements. Experiments are conducted to study the robot's locomotion. Finite element method is employed to interpret the deformation of dielectric elastomer actuators, and the simulations are qualitatively consistent with the experimental observations.

Hydrothermal process assists undoped and Cr-doped semiconducting ZnO nanorods: Frontier of dielectric property

NASA Astrophysics Data System (ADS)

Debnath, Tanumoy; Saha, Papiya; Patra, Nesla; Das, Sukhen; Sutradhar, Soumyaditya

2018-05-01

The influence of the hydrothermal synthesis route on the grain morphology and thereby the modulation of dielectric response of undoped and Cr3+ ion doped semiconducting ZnO nanoparticles is investigated in this report. The X-ray diffraction study reveals that all the samples are in a polycrystalline single phase of a hexagonal wurtzite structure of ZnO. The field emission scanning electron microscopy study reveals the rod like structure of all the samples. The formation of synthesis route dependent morphology and the morphology dependent physical property of all the samples are the characteristic features of the present work and to date it has not been considered as the specific tool of dielectric property modulation by anyone else. The ultraviolet-visible measurement signifies the superior control over the charge density of the host semiconducting material due to the presence of Cr3+ ions in the structure of ZnO. In the photoluminescence measurement, no significant peak has been observed in the visible region. The frequency and temperature dependent dielectric constants of all the samples were investigated. The consequences of the dielectric measurement suggest that the hydrothermal synthesis route influences the growth mechanism of the semiconducting nanoparticles mostly towards the rod like structure and the doping element influences the charge density, nature of defects, and the defect densities inside the structure of ZnO nanomaterials. All these factors together make the semiconducting ZnO nanomaterials more effective for tailor made applications in magneto-dielectric devices.

Generalized Brewster effect in dielectric metasurfaces

PubMed Central

Paniagua-Domínguez, Ramón; Yu, Ye Feng; Miroshnichenko, Andrey E.; Krivitsky, Leonid A.; Fu, Yuan Hsing; Valuckas, Vytautas; Gonzaga, Leonard; Toh, Yeow Teck; Kay, Anthony Yew Seng; Luk'yanchuk, Boris; Kuznetsov, Arseniy I.

2016-01-01

Polarization is a key property defining the state of light. It was discovered by Brewster, while studying light reflected from materials at different angles. This led to the first polarizers, based on Brewster's effect. Now, one of the trends in photonics is the study of miniaturized devices exhibiting similar, or improved, functionalities compared with bulk optical elements. In this work, it is theoretically predicted that a properly designed all-dielectric metasurface exhibits a generalized Brewster's effect potentially for any angle, wavelength and polarization of choice. The effect is experimentally demonstrated for an array of silicon nanodisks at visible wavelengths. The underlying physics is related to the suppressed scattering at certain angles due to the interference between the electric and magnetic dipole resonances excited in the nanoparticles. These findings open doors for Brewster phenomenon to new applications in photonics, which are not bonded to a specific polarization or angle of incidence. PMID:26783075

On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

NASA Astrophysics Data System (ADS)

Sarkar, Biplab; Mills, Steven; Lee, Bongmook; Pitts, W. Shepherd; Misra, Veena; Franzon, Paul D.

2018-02-01

In this work, we report on mimicking the synaptic forgetting process using the volatile mem-capacitive effect of a resistive random access memory (RRAM). TiO2 dielectric, which is known to show volatile memory operations due to migration of inherent oxygen vacancies, was used to achieve the volatile mem-capacitive effect. By placing the volatile RRAM candidate along with SiO2 at the gate of a MOS capacitor, a volatile capacitance change resembling the forgetting nature of a human brain is demonstrated. Furthermore, the memory operation in the MOS capacitor does not require a current flow through the gate dielectric indicating the feasibility of obtaining low power memory operations. Thus, the mem-capacitive effect of volatile RRAM candidates can be attractive to the future neuromorphic systems for implementing the forgetting process of a human brain.

Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator

NASA Astrophysics Data System (ADS)

Takahashi, Takanori; Oikawa, Kento; Hoga, Takeshi; Uraoka, Yukiharu; Uchiyama, Kiyoshi

2017-10-01

In this paper, we describe a method of fabrication of thin film transistors (TFTs) with high dielectric constant (high-k) gate insulator by a solution deposition. We chose a solution processed SrZrO3 as a gate insulator material, which possesses a high dielectric constant of 21 with smooth surface. The IGZO-TFT with solution processed SrZrO3 showed good switching property and enough saturation features, i.e. field effect mobility of 1.7cm2/Vs, threshold voltage of 4.8V, sub-threshold swing of 147mV/decade, and on/off ratio of 2.3×107. Comparing to the TFTs with conventional SiO2 gate insulator, the sub-threshold swing was improved by smooth surface and high field effect due to the high dielectric constant of SrZrO3. These results clearly showed that use of solution processed high-k SrZrO3 gate insulator could improve sub-threshold swing. In addition, the residual carbon originated from organic precursors makes TFT performances degraded.

Investigation of nanosecond pulse dielectric barrier discharges in still air and in transonic flow by optical methods

NASA Astrophysics Data System (ADS)

Peschke, P.; Goekce, S.; Leyland, P.; Ott, P.

2016-01-01

In the present study the interaction of nanosecond pulsed dielectric barrier discharge (ns-DBD) actuators with aerodynamic flow up to transonic velocities was investigated. The primary focus was on the influence of the flow on the discharge and the effects of the discharge itself. In addition, the influence of the ns-DBD on a shock-wave was studied. The aim was to improve the understanding of the plasma-flow interaction, a topic that is not yet fully understood, in particular for ns-DBD. The actuator was integrated in two different models, a NACA 3506 compressor blade profile and a bump geometry at the bottom of the wind tunnel. The effect of the rapid energy deposition close to the discharge was examined with the phase-locked schlieren visualisation technique. Images of the plasma acquired with short exposure times revealed information on the discharge evolution. The results show a significant effect of the flow on the discharge characteristics, in particular due to the drop of static pressure. On the other hand, no significant effect of the ns-DBD on the flow was observed due to unfavourable flow conditions, which underlines the importance of the actuator’s placement.

Effect of Secondary Doping Using Sorbitol on Structure and Transport Properties of PEDOT-PSS Thin Films

NASA Astrophysics Data System (ADS)

Khasim, Syed; Pasha, Apsar; Roy, Aashish S.; Parveen, Ameena; Badi, Nacer

2017-07-01

Poly(3,4-ethylene dioxythiophene):poly(styrenesulphonate) (PEDOT-PSS) in the recent past has emerged as one of the most fascinating conducting polymers for many device applications. The unique feature of PEDOT-PSS is its transparency in the entire visible spectrum with excellent thermal stability. The PEDOT-PSS as prepared as an aqueous dispersion has very low conductivity, and it hinders the performance of a device. In this work we report the conductivity enhancement of PEDOT-PSS thin films through secondary doping using a polar organic solvent such as sorbitol. The mechanism of conductivity enhancement was studied through various physical and chemical characterizations. The effect of sorbitol concentration on structure and transport properties of PEDOT-PSS thin films was investigated in detail. The structural and morphological modifications in PEDOT-PSS due to the addition of sorbitol was studied through Fourier transform spectroscopy, Ultra Violet-visible spectroscopy, theromogravimetric analysis, scanning electron microscopy and atomic force microscopy. The interactions resulting from conformational changes of PEDOT chains that changes from coiled to linear structure due to the sorbitol treatment significantly improves the conductivity of PEDOT-PSS films. The secondary doping of sorbitol reduces the energy barrier that facilitates the charge carrier hopping leading to enhanced conductivity. We have observed that the conductivity of PEDOT-PSS thin films was increased by two fold due to sorbitol treatment when compared to conductivity of pure PEDOT-PSS. We have carried out detailed analysis of dielectric parameters of sorbitol-treated PEDOT-PSS films and found that sorbitol treatment has a significant effect on various dielectric attributes of PEDOT-PSS films. Hence, secondary doping using sorbitol could be a useful way to effectively tailor the conductivity and dielectric properties of PEDOT-PSS thin films that can be used as flexible electrodes in optoelectronic devices.

Anticipating electrical breakdown in dielectric elastomer actuators

NASA Astrophysics Data System (ADS)

Muffoletto, Daniel P.; Burke, Kevin M.; Zirnheld, Jennifer L.

2013-04-01

The output strain of a dielectric elastomer actuator is directly proportional to the square of its applied electric field. However, since the likelihood of electric breakdown is elevated with an increased applied field, the maximum operating electric field of the dielectric elastomer is significantly derated in systems employing these actuators so that failure due to breakdown remains unlikely even as the material ages. In an effort to ascertain the dielectric strength so that stronger electric fields can be applied, partial discharge testing is used to assess the health of the actuator by detecting the charge that is released when localized instances of breakdown partially bridge the insulator. Pre-stretched and unstretched samples of VHB4910 tape were submerged in dielectric oil to remove external sources of partial discharges during testing, and the partial discharge patterns were recorded just before failure of the dielectric sample.

Electron transport model of dielectric charging

NASA Technical Reports Server (NTRS)

Beers, B. L.; Hwang, H. C.; Lin, D. L.; Pine, V. W.

1979-01-01

A computer code (SCCPOEM) was assembled to describe the charging of dielectrics due to irradiation by electrons. The primary purpose for developing the code was to make available a convenient tool for studying the internal fields and charge densities in electron-irradiated dielectrics. The code, which is based on the primary electron transport code POEM, is applicable to arbitrary dielectrics, source spectra, and current time histories. The code calculations are illustrated by a series of semianalytical solutions. Calculations to date suggest that the front face electric field is insufficient to cause breakdown, but that bulk breakdown fields can easily be exceeded.

Variation in dielectric properties due to pathological changes in human liver.

PubMed

Peyman, Azadeh; Kos, Bor; Djokić, Mihajlo; Trotovšek, Blaž; Limbaeck-Stokin, Clara; Serša, Gregor; Miklavčič, Damijan

2015-12-01

Dielectric properties of freshly excised human liver tissues (in vitro) with several pathological conditions including cancer were obtained in frequency range 100 MHz-5 GHz. Differences in dielectric behavior of normal and pathological tissues at microwave frequencies are discussed based on histological information for each tissue. Data presented are useful for many medical applications, in particular nanosecond pulsed electroporation techniques. Knowledge of dielectric properties is vital for mathematical calculations of local electric field distribution inside electroporated tissues and can be used to optimize the process of electroporation for treatment planning procedures. © 2015 Wiley Periodicals, Inc.

The dielectric behavior of Zn1-xNixO/NiO two-phase composites

NASA Astrophysics Data System (ADS)

Joshi, D. C.; Thota, S.; Nayak, S.; Harish, D. D.; Mahesh, P.; Kumar, A.; Pamu, D.; Qureshi, Md

2014-10-01

The effect of nickel content on the dielectric permittivity ‘ɛr’ and the ac-electrical conductivity of Zn1-xNixO/NiO (0 ≤ x ≤ 0.55) two-phase composites were investigated. The antiferro to the paramagnetic Néel temperature TN (~ 523 K) of the NiO associated with the structural phase transition from the rhombohedral to the cubic phase has been exploited to realize a dielectric anomaly across 523-541 K in the Zn1-xNixO/NiO composite system. Also, a giant dielectric peak across 410 °C in pure NiO was observed together with an anomaly across TN. The formation of tiny polar clusters due to the compositional heterogeneity for the samples with x ≥ 0.16 drove the system to exhibit a weakly coupled relaxor-like behavior with a locally varying maximum temperature of T* (~ 530 K at 106 Hz), obeying the Vogel-Fulcher law and the Uchino-Nomura criteria. The values of the diffuseness-exponent ‘γ’ (1.91) and the shape-parameter ‘δ’ (88 °C) were determined by using the empirical scaling relation (ɛA/ɛr = 1 + 0.5 (T - TA)2/ δ2), which is often used to describe relaxor-like behavior. Our results provide strong evidence for the variable-range-hopping of charge carriers between the localized states. The effects of non-ohmic sample-electrode contact impedance and negative-capacitance on the global dielectric behavior of a Zn1-xNixO/NiO composite system are discussed.

Near-field polarization distribution of Si nanoparticles near substrate

NASA Astrophysics Data System (ADS)

Reshetov, S. A.; Vladimirova, Yu. V.; Gevorkian, L. P.; Zadkov, V. N.

2017-01-01

Structure of the near-field intensity and polarization distributions, the latter is described with the generalized 3D Stokes parameters, of a spherical Si subwavelength nanoparticle in a non-magnetic and non-absorbing media near a dielectric substrate has been studied in detail with the help of the Mie theory and an extension of the Weyl's method for the calculation of the reflection of dipole radiation by a flat surface. It is shown that for the nanoparticle near the substrate the interference effects due to the scattering by the nanoparticle and interaction with the substrate play an essential role. We also demonstrate how these effects depend on the dielectric properties of the nanoparticle, its size, distance to the substrate as well as on the polarization, wavelength and incident angle of the external light field.

Effect of a magnetic field on the permittivity of 80%La0.7Sr0.3MnO3/20%GeO2 composite

NASA Astrophysics Data System (ADS)

Kabirov, Yu. V.; Gavrilyachenko, V. G.; Bogatin, A. S.; Sitalo, E. I.; Yatsenko, V. K.

2018-01-01

The dielectric properties of a magnetoresistive conducting two-phase 80%La0.7Sr0.3MnO3/20%GeO2 (wt %) composite have been studied near the percolation threshold in magnetic fields from 0 to 15 kOe at frequencies of the measurement field from 5 kHz to 1 MHz. The samples have inductive impedances; i.e., their permittivities can be considered negative due to a high conductivity in this frequency range. The permittivity increases in magnitude in magnetic field, and the values of the magnetodielectric coefficient reach 23% at room temperature. The reasons for the effect of magnetic field on the dielectric permittivity of samples are discussed.

Dielectric Barrier Discharge Plasma Actuator for Flow Control

NASA Technical Reports Server (NTRS)

Opaits, Dmitry, F.

2012-01-01

This report is Part II of the final report of NASA Cooperative Agreement contract no. NNX07AC02A. It includes a Ph.D. dissertation. The period of performance was January 1, 2007 to December 31, 2010. Part I of the final report is the overview published as NASA/CR-2012- 217654. Asymmetric dielectric barrier discharge (DBD) plasma actuators driven by nanosecond pulses superimposed on dc bias voltage are studied experimentally. This produces non-self-sustained discharge: the plasma is generated by repetitive short pulses, and the pushing of the gas occurs primarily due to the bias voltage. The parameters of ionizing pulses and the driving bias voltage can be varied independently, which adds flexibility to control and optimization of the actuators performance. The approach consisted of three elements coupled together: the Schlieren technique, burst mode of plasma actuator operation, and 2-D numerical fluid modeling. During the experiments, it was found that DBD performance is severely limited by surface charge accumulation on the dielectric. Several ways to mitigate the surface charge were found: using a reversing DC bias potential, three-electrode configuration, slightly conductive dielectrics, and semi conductive coatings. Force balance measurements proved the effectiveness of the suggested configurations and advantages of the new voltage profile (pulses+bias) over the traditional sinusoidal one at relatively low voltages. In view of practical applications certain questions have been also addressed, such as electrodynamic effects which accompany scaling of the actuators to real size models, and environmental effects of ozone production by the plasma actuators.

Low-temperature sol-gel oxide TFT with a fluoropolymer dielectric to enhance the effective mobility at low operation voltage

NASA Astrophysics Data System (ADS)

Yu, Shang-Yu; Wang, Kuan-Hsun; Zan, Hsiao-Wen; Soppera, Olivier

2017-06-01

In this article, we propose a solution-processed high-performance amorphous indium-zinc oxide (a-IZO) thin-film transistor (TFT) gated with a fluoropolymer dielectric. Compared with a conventional IZO TFT with a silicon nitride dielectric, a fluoropolymer dielectric effectively reduces the operation voltage to less than 3 V and greatly increases the effective mobility 40-fold. We suggest that the dipole layer formed at the dielectric surface facilitates electron accumulation and induces the electric double-layer effect. The dipole-induced hysteresis effect is also investigated.

The effect of electron-beam irradiation and halogen-free flame retardants on properties of poly butylene terephthalate

NASA Astrophysics Data System (ADS)

Hooshangi, Zhila; Feghhi, Seyed Amir Hossein; Sheikh, Nasrin

2015-03-01

Engineering plastics like Poly (butylene terephthalate) due to their desirable properties have various industrial applications. Neat PBT is highly combustible, so it is necessary to improve significantly its fire retardancy to meet the fire safety requirements. The combustion performance of PBT can be improved by addition of appropriate flame retardant additives. In this study we have investigated the effect of halogen free flame retardants, i.e. melamine and aluminum phosphate, and instantaneously electron beam radiation-induced crosslinking in the presence of Triallyl cyanurate on various properties of PBT. The results of gel content showed that a dose range of 200-400 kGy leads to high cross linked structure in this polymer. Also mechanical experiments showed that its structure became rigid and fragile due to irradiation. Radiation crosslinking of this polymer made its dielectric loss coefficient ten times lower than non-irradiated polymer, but had no effect on its dielectric constant. Moreover the addition of the fire retardant additives as impurity decreased the dielectric loss coefficient. TGA analysis in nitrogen exhibited that irradiation increases char formation and use of the fire retardant additives leads to reduction of onset temperature and formation of higher char quantity than pure PBT. According to the results of UL-94, irradiated samples burned with lower speed and less dripping in vertical and horizontal positions than pure polymer. Finally irradiation of the polymers containing fire retardant additives with a dose of 400 kGy led to self-extinguishing and non-dripping and reach to V-0 level in the UL-94 V.

Viscoelastic effects on the actuation performance of a dielectric elastomer actuator under different equal, un-equal biaxial pre-stretches

NASA Astrophysics Data System (ADS)

Quang Tran, Danh; Li, Jin; Xuan, Fuzhen; Xiao, Ting

2018-06-01

Dielectric elastomers (DEs) are belonged to a group of polymers which cause a time-dependence deformation due to the effect of viscoelastic. In recent years, viscoelasticity has been accounted in the modeling in order to understand the complete electromechanical behavior of dielectric elastomer actuators (DEAs). In this paper, we investigate the actuation performance of a circular DEA under different equal, un-equal biaxial pre-stretches, based on a nonlinear rheological model. The theoretical results are validated by experiments, which verify the electromechanical constitutive equation of the DEs. The viscoelastic mechanical characteristic is analyzed by modeling simulation analysis and experimental to describe the influence of frequency, voltage, pre-stretch, and waveform on the actuation response of the actuator. Our study indicates that: The DEA with different equal or un-equal biaxial pre-stretches undergoes different actuation performance when subject to high voltage. Under an un-equal biaxial pre-stretch, the DEA deforms unequally and shows different deformation abilities in two directions. The relative creep strain behavior of the DEA due to the effect of viscoelasticity can be reduced by increasing pre-stretch ratio. Higher equal biaxial pre-stretch obtains larger deformation strain, improves actuation response time, and reduces the drifting of the equilibrium position in the dynamic response of the DEA when activated by step and period voltage, while increasing the frequency will inhibit the output stretch amplitude. The results in this paper can provide theoretical guidance and application reference for design and control of the viscoelastic DEAs.

A Study of Dip-Coatable, High-Capacitance Ion Gel Dielectrics for 3D EWOD Device Fabrication

PubMed Central

Clement, Carlos E.; Jiang, Dongyue; Thio, Si Kuan; Park, Sung-Yong

2017-01-01

We present a dip-coatable, high-capacitance ion gel dielectric for scalable fabrication of three-dimensional (3D) electrowetting-on-dielectric (EWOD) devices such as an n × n liquid prism array. Due to the formation of a nanometer-thick electric double layer (EDL) capacitor, an ion gel dielectric offers two to three orders higher specific capacitance (c ≈ 10 μF/cm2) than that of conventional dielectrics such as SiO2. However, the previous spin-coating method used for gel layer deposition poses several issues for 3D EWOD device fabrication, particularly when assembling multiple modules. Not only does the spin-coating process require multiple repetitions per module, but the ion gel layer also comes in risks of damage or contamination due to handling errors caused during assembly. In addition, it was observed that the chemical formulation previously used for the spin-coating method causes the surface defects on the dip-coated gel layers and thus leads to poor EWOD performance. In this paper, we alternatively propose a dip-coating method with modified gel solutions to obtain defect-free, functional ion gel layers without the issues arising from the spin-coating method for 3D device fabrication. A dip-coating approach offers a single-step coating solution with the benefits of simplicity, scalability, and high throughput for deposition of high-capacitance gel layers on non-planar EWOD devices. An ion gel solution was prepared by combining the [EMIM][TFSI] ionic liquid and the [P(VDF-HFP)] copolymer at various wt % ratios in acetone solvent. Experimental studies were conducted to fully understand the effects of chemical composition ratios in the gel solution and how varying thicknesses of ion gel and Teflon layers affects EWOD performance. The effectiveness and potentiality of dip-coatable gel layers for 3D EWOD devices have been demonstrated through fabricating 5 × 1 arrayed liquid prisms using a single-step dip-coating method. Each prism module has been individually controlled to achieve spatial beam steering without the need for bulky mechanical moving parts. PMID:28772400

A Study of Dip-Coatable, High-Capacitance Ion Gel Dielectrics for 3D EWOD Device Fabrication.

PubMed

Clement, Carlos E; Jiang, Dongyue; Thio, Si Kuan; Park, Sung-Yong

2017-01-05

We present a dip-coatable, high-capacitance ion gel dielectric for scalable fabrication of three-dimensional (3D) electrowetting-on-dielectric (EWOD) devices such as an n × n liquid prism array. Due to the formation of a nanometer-thick electric double layer (EDL) capacitor, an ion gel dielectric offers two to three orders higher specific capacitance ( c ≈ 10 μF/cm²) than that of conventional dielectrics such as SiO₂. However, the previous spin-coating method used for gel layer deposition poses several issues for 3D EWOD device fabrication, particularly when assembling multiple modules. Not only does the spin-coating process require multiple repetitions per module, but the ion gel layer also comes in risks of damage or contamination due to handling errors caused during assembly. In addition, it was observed that the chemical formulation previously used for the spin-coating method causes the surface defects on the dip-coated gel layers and thus leads to poor EWOD performance. In this paper, we alternatively propose a dip-coating method with modified gel solutions to obtain defect-free, functional ion gel layers without the issues arising from the spin-coating method for 3D device fabrication. A dip-coating approach offers a single-step coating solution with the benefits of simplicity, scalability, and high throughput for deposition of high-capacitance gel layers on non-planar EWOD devices. An ion gel solution was prepared by combining the [EMIM][TFSI] ionic liquid and the [P(VDF-HFP)] copolymer at various wt % ratios in acetone solvent. Experimental studies were conducted to fully understand the effects of chemical composition ratios in the gel solution and how varying thicknesses of ion gel and Teflon layers affects EWOD performance. The effectiveness and potentiality of dip-coatable gel layers for 3D EWOD devices have been demonstrated through fabricating 5 × 1 arrayed liquid prisms using a single-step dip-coating method. Each prism module has been individually controlled to achieve spatial beam steering without the need for bulky mechanical moving parts.

The fluid mechanics of continuous flow electrophoresis

NASA Technical Reports Server (NTRS)

Saville, D. A.

1990-01-01

The overall objective is to establish theoretically and confirm experimentally the ultimate capabilities of continuous flow electrophoresis chambers operating in an environment essentially free of particle sedimentation and buoyancy. The efforts are devoted to: (1) studying the effects of particle concentration on sample conductivity and dielectric constant. The dielectric constant and conductivity were identified as playing crucial roles in the behavior of the sample and on the resolving power and throughput of continuous flow devices; and (2) improving the extant mathematical models to predict flow fields and particle trajectories in continuous flow electrophoresis. A dielectric spectrometer was designed and built to measure the complex dielectric constant of a colloidal dispersion as a function of frequency between 500 Hz and 200 kHz. The real part of the signal can be related to the sample's conductivity and the imaginary part to its dielectric constant. Measurements of the dielectric constants of several different dispersions disclosed that the dielectric constants of dilute systems of the sort encountered in particle electrophoresis are much larger than would be expected based on the extant theory. Experiments were carried out to show that, in many cases, this behavior is due to the presence of a filamentary structure of small hairs on the particle surface. A technique for producing electrokinetically ideal synthetic latex particles by heat treating was developed. Given the ubiquitous nature of hairy surfaces with both cells and synthetic particles, it was deemed necessary to develop a theory to explain their behavior. A theory for electrophoretic mobility of hairy particles was developed. Finally, the extant computer programs for predicting the structure of electro-osmotically driven flows were extended to encompass flow channels with variable wall mobilities.

Dielectric studies on struvite urinary crystals, a gateway to the new treatment modality for urolithiasis

NASA Astrophysics Data System (ADS)

Rajan, Reshma; Raj, N. Arunai Nambi; Madeswaran, S.; Babu, D. Rajan

2015-09-01

Struvite or magnesium ammonium phosphate hexahydrate (MAPH) are biological crystals, found in the kidney, which are formed due to the infection caused by urea splitting bacteria in the urinary tract. The struvite crystals observe different morphologies and were developed using single diffusion gel growth technique. The crystalline nature and its composition were studied from different characterization techniques like X-ray Diffraction (XRD) and FTIR. The dielectric behavior of the developed crystal was studied by varying temperature and at different frequencies. The parameters like dielectric constant, dielectric loss, ac conductivity, ac resistivity, impedance and admittance of the struvite crystals were calculated. The studies proved that the dielectric loss or dissipation heat is high in lower frequencies at normal body temperature, which develops a plasma state in the stones and in turn leads to the disintegration of urinary stones. The dielectric nature of the stones leads to the dielectric therapy, which will be a gateway for future treatment modality for urolithiasis.

Aromatic Polythiourea Dielectrics with High Energy Density, High Breakdown Strength, and Low Dielectric Loss

NASA Astrophysics Data System (ADS)

Wu, Shan; Burlingame, Quinn; Lin, Minren; Zhang, Qiming

2013-03-01

There is an increasing demand on dielectric materials with high electric energy density and low loss for a broad range of applications in modern electronics and electrical power systems such as hybrid electric vehicles (HEV), medical defibrillators, filters, and switched-mode power supplies. One major challenge in developing dielectric polymers is how to achieve high energy density Ue while maintaining low dielectric loss, even at very high-applied electric fields. Here we show that amorphous polar-polymers with very low impurity concentration can be promising for realizing such a dielectric polymer. Polar-polymer with high dipole moment and weak dipole coupling can provide relatively high dielectric constant for high Ue, eliminate polarization and conduction losses due to weak dipolar coupling and strong polar-scattering to charge carriers. Indeed, an aromatic polythiourea thin film can maintain low loss to high fields (>1 GV/m) with a high Ue (~ 24 J/cm3) , which is very attractive for energy storage capacitors.

Experimental realization of a terahertz all-dielectric metasurface absorber.

PubMed

Liu, Xinyu; Fan, Kebin; Shadrivov, Ilya V; Padilla, Willie J

2017-01-09

Metamaterial absorbers consisting of metal, metal-dielectric, or dielectric materials have been realized across much of the electromagnetic spectrum and have demonstrated novel properties and applications. However, most absorbers utilize metals and thus are limited in applicability due to their low melting point, high Ohmic loss and high thermal conductivity. Other approaches rely on large dielectric structures and / or a supporting dielectric substrate as a loss mechanism, thereby realizing large absorption volumes. Here we present a terahertz (THz) all dielectric metasurface absorber based on hybrid dielectric waveguide resonances. We tune the metasurface geometry in order to overlap electric and magnetic dipole resonances at the same frequency, thus achieving an experimental absorption of 97.5%. A simulated dielectric metasurface achieves a total absorption coefficient enhancement factor of FT=140, with a small absorption volume. Our experimental results are well described by theory and simulations and not limited to the THz range, but may be extended to microwave, infrared and optical frequencies. The concept of an all-dielectric metasurface absorber offers a new route for control of the emission and absorption of electromagnetic radiation from surfaces with potential applications in energy harvesting, imaging, and sensing.

Effect of bromine deficiency on the lattice dynamics and dielectric properties of alpha-phase diisopropylammonium bromide molecular crystals

NASA Astrophysics Data System (ADS)

Alsaad, Ahmad; Marin, Chris M.; Alaqtash, Nabil; Chao, Hsien-Wen; Chang, Tsun-Hsu; Cheung, Chin Li; Ahmad, A.; Qattan, I. A.; Sabirianov, Renat F.

2018-02-01

Diisopropylammonium bromide (DIPAB) molecular ferroelectric crystals were synthesized and examined to exhibit a large electric polarization (∼23μC/cm2), a large dielectric constant in the α-phase. Although the PXRD pattern indicates that the α-DIPAB sample has an overall excellent crystallinity, our analysis of its FT-IR and Raman vibrational spectra suggests the presence of disorder in the synthesized crystals as indicated by the presence of broad features in the Raman spectrum. Using vdW+DF2 calculations, we identified the majority of vibrational modes in the experimental spectra and analyzed the ones due to Br-disorder. We found that the bromine (Br) deficiency strongly affects the electric properties of α-DIPAB. Particularly, the experimentally measured dielectric constant of α-DIPAB is large (∼20), whereas the DFT-based calculations of the ideal DIPAB give much smaller values (∼2-3). We find that Br-deficiency is responsible for large dielectric constant of the DIPAB crystal with calculated value of ∼15-20. Furthermore, we showed that the van der Waals forces have a slight effect on the structural parameters, only causing a small shift in the vibrational frequencies. The main vibrational features of the DIPAB crystal in the Raman spectrum were shown to be driven by covalent bonding in the DIPA molecules and hydrogen bonds between the molecules with Br.

Electrophoresis of a polarizable charged colloid with hydrophobic surface: A numerical study

NASA Astrophysics Data System (ADS)

Bhattacharyya, Somnath; Majee, Partha Sarathi

2017-04-01

We consider the electrophoresis of a charged colloid for a generalized situation in which the particle is considered to be polarizable and the surface exhibits hydrophobicity. The dielectric polarization of the particle creates a nonlinear dependence of the electrophoretic velocity on the applied electric field, and the core hydrophobicity amplifies the fluid convection in the Debye layer. Thus, a linear analysis is no longer applicable for this situation. The present analysis is based on the numerical solution of the nonlinear electrokinetic equations based on the Navier-Stokes-Nernst-Planck-Poisson equations coupled with the Laplace equation for the electric field within the dielectric particle. The hydrophobicity of the particle may influence its electric polarization by enhancing the convective transport of ions. The nonlinear effects, such as double-layer polarization and relaxation, are also influenced by the hydrophobicity of the particle surface. The present results compare well for a lower range of the applied electric field and surface charge density with the existing results for a perfectly dielectric particle with a hydrophobic surface based on the first-order perturbation analysis due to Khair and Squires [Phys. Fluids 21, 042001 (2009), 10.1063/1.3116664]. Dielectric polarization creates a reduction in particle electrophoretic velocity, and its impact is strong for a moderate range of Debye length. A quantitative measure of the nonlinear effects is demonstrated by comparing the electrophoretic velocity with an existing linear model.

Graphene Oxide Papers Simultaneously Doped with Mg(2+) and Cl(-) for Exceptional Mechanical, Electrical, and Dielectric Properties.

PubMed

Lin, Xiuyi; Shen, Xi; Sun, Xinying; Liu, Xu; Wu, Ying; Wang, Zhenyu; Kim, Jang-Kyo

2016-01-27

This paper reports simultaneous modification of graphene oxide (GO) papers by functionalization with MgCl2. The Mg(2+) ions enhance both the interlayer cross-links and lateral bridging between the edges of adjacent GO sheets by forming Mg-O bonds. The improved load transfer between the GO sheets gives rise to a maximum of 200 and 400% increases in Young's modulus and tensile strength of GO papers. The intercalation of chlorine between the GO layers alters the properties of GO papers in two ways by forming ionic Cl(-) and covalent C-Cl bonds. The p-doping effect arising from Cl contributes to large enhancements in electrical conductivities of GO papers, with a remarkable 2500-fold surge in the through-thickness direction. The layered structure and the anisotropic electrical conductivities of reduced GO papers naturally create numerous nanocapacitors that lead to charge accumulation based on the Maxwell-Wagner (MW) polarization. The combined effect of much promoted dipolar polarizations due to Mg-O, C-Cl, and Cl(-) species results in an exceptionally high dielectric constant greater than 60 000 and a dielectric loss of 3 at 1 kHz by doping with 2 mM MgCl2. The excellent mechanical and electrical properties along with unique dielectric performance shown by the modified GO and rGO papers open new avenues for niche applications, such as electromagnetic interference shielding materials.

Light localization and SERS in tip-shaped silicon metasurface.

PubMed

Lagarkov, Andrey; Boginskaya, Irina; Bykov, Igor; Budashov, Igor; Ivanov, Andrey; Kurochkin, Ilya; Ryzhikov, Ilya; Rodionov, Ilya; Sedova, Marina; Zverev, Alexander; Sarychev, Andrey K

2017-07-24

Optical properties of two dimensional periodic system of the silicon micro-cones are investigated. The metasurface, composed of the silicon tips, shows enhancement of the local optical field. Finite element computer simulations as well as real experiment reveal anomalous optical response of the dielectric metasurface due to excitation of the dielectric resonances. Various electromagnetic resonances are considered in the dielectric cone. The metal-dielectric resonances, which are excited between metal nanoparticles and dielectric cones, are also considered. The resonance local electric field can be much larger than the field in the usual surface plasmon resonances. To investigate local electric field the signal molecules are deposited on the metal nanoparticles. We demonstrate enhancement of the electromagnetic field and Raman signal from the complex of DTNB acid molecules and gold nanoparticles, which are distributed over the metasurface. The metasurfaces composed from the dielectric resonators can have quasi-continuous spectrum and serve as an efficient SERS substrates.

Studies on the structural, optical and dielectric properties of samarium coordinated with salicylic acid single crystal

NASA Astrophysics Data System (ADS)

Singh, Harjinder; Slathia, Goldy; Gupta, Rashmi; Bamzai, K. K.

2018-04-01

Samarium coordinated with salicylic acid was successfully grown as a single crystal by low temperature solution technique using mixed solvent of methanol and water in equal ratio. Structural characterization was carried out by single crystal X-ray diffraction analysis and it crystallizes in centrosymmetric space group P121/c1. FTIR and UV-Vis-NIR spectroscopy confirmed the compound formation and help to determine the mode of binding of the ligand to the rare earth-metal ion. Dielectric constant and dielectric loss have been measured over the frequency range 100 Hz - 30MHz. The decrease in dielectric constant with increases in frequency is due to the transition from interfacial polarization to dipolar polarization. The small value of dielectric constant at higher frequency ensures that the crystal is good candidate for NLO devices. Dielectric loss represents the resistive nature of the material.

Computational screening of organic polymer dielectrics for novel accelerator technologies

DOE PAGES

Pilania, Ghanshyam; Weis, Eric; Walker, Ethan M.; ...

2018-06-18

The use of infrared lasers to power accelerating dielectric structures is a developing area of research. Within this technology, the choice of the dielectric material forming the accelerating structures, such as the photonic band gap (PBG) structures, is dictated by a range of interrelated factors including their dielectric and optical properties, amenability to photo-polymerization, thermochemical stability and other target performance metrics of the particle accelerator. In this direction, electronic structure theory aided computational screening and design of dielectric materials can play a key role in identifying potential candidate materials with the targeted functionalities to guide experimental synthetic efforts. In anmore » attempt to systematically understand the role of chemistry in controlling the electronic structure and dielectric properties of organic polymeric materials, here we employ empirical screening and density functional theory (DFT) computations, as a part of our multi-step hierarchal screening strategy. Our DFT based analysis focused on the bandgap, dielectric permittivity, and frequency-dependent dielectric losses due to lattice absorption as key properties to down-select promising polymer motifs. In addition to the specific application of dielectric laser acceleration, the general methodology presented here is deemed to be valuable in the design of new insulators with an attractive combination of dielectric properties.« less

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

NASA Astrophysics Data System (ADS)

Lagger, P.; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Naumann, A.; Müller, J.; Wilde, L.; Sundqvist, J.; Pogany, D.; Ostermaier, C.

2014-07-01

The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔVth, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness tD and barrier thickness tB, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔNit, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔNit is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

Dielectric Characterization of Mylar and The Effects of Doping Processes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belcher, Cami Beth

2016-11-01

Mylar® polymer is a bi-axially oriented polyethylene terephthalate (PET) polymer film used widely as a dielectric, specifically in capacitors. The dielectric characteristics of Mylar have been well studied and documented over the years; however, many of the mechanisms responsible for dielectric breakdown and failure are not understood for modified versions of the material. Previous studies on Mylar confirm that factors such as temperature, humidity, and voltage ramp rates can also have a significant effect on the dielectric properties and measurement of the dielectric properties. This study seeks to determine how dielectric properties, including permittivity, dielectric loss, and breakdown strength, aremore » affected by doping of the polymer. To do this, two types of Mylar films, virgin film and film doped with a small-molecule electron-acceptor, are tested. Both types of materials are tested under a variety of environmental and experimental conditions, including testing at elevated temperatures, varying relative humidity, and varying ramp rates in dielectric breakdown testing. Analysis of permittivity, dielectric loss, and breakdown strength will be presented comparing virgin and doped Mylar to gain insight into the effects of doping with electron-acceptor molecules on dielectric properties under these varying environmental and test conditions.« less

Structural and dielectric properties of Ba{sub 2}LaSbO{sub 6} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumari, Premlata, E-mail: k.premlata1@gmail.com; Dutta, Alo; Sinha, T. P.

2014-04-24

The ceramic Ba{sub 2}LaSbO{sub 6} (BLS) is synthesized by the solid state reaction technique. The Rietveld refinement of X-ray diffraction pattern at room temperature shows Monoclinic P2{sub 1}/n space group symmetry with lattice parameter a = 6.0720 (0) Å, b = 6.1058 (3) Å, c = 8.6016 (6) Å and β =89.7091 ° (8). Dielectric study of sample has been performed in the temperature range from 30 °C to 300 °C in the frequency range 50 Hz to 1.1 MHz. Dielectric relaxation peaks are observed in the imaginary part of complex permittivity of the spectra. The frequency dependence of realmore » and imaginary parts of dielectric permittivity is analyzed using Cole-Cole model. The temperature dependent relaxation time is found to obey the Arrhenius law having activation energy 0.48 eV which indicates that the conduction mechanism in the materials may be due to polaron hopping based on electron carriers. The complex plane plots of BLS shows the presence of both grain and grain boundary effects. Conductivity spectra follow the power law.« less

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO₂ Gate Dielectrics by CF₄ Plasma Treatment.

PubMed

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

2018-05-17

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO₂ gate insulator and CF₄ plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO₂ gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm²/V∙s (without treatment) to 54.6 cm²/V∙s (with CF₄ plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO₂ gate dielectric has also been improved by the CF₄ plasma treatment. By applying the CF₄ plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device's immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF₄ plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO₂ gate dielectric, but also enhances the device's reliability.

Protein-ion binding process on finite macromolecular concentration. A Poisson-Boltzmann and Monte Carlo study.

PubMed

de Carvalho, Sidney Jurado; Fenley, Márcia O; da Silva, Fernando Luís Barroso

2008-12-25

Electrostatic interactions are one of the key driving forces for protein-ligands complexation. Different levels for the theoretical modeling of such processes are available on the literature. Most of the studies on the Molecular Biology field are performed within numerical solutions of the Poisson-Boltzmann Equation and the dielectric continuum models framework. In such dielectric continuum models, there are two pivotal questions: (a) how the protein dielectric medium should be modeled, and (b) what protocol should be used when solving this effective Hamiltonian. By means of Monte Carlo (MC) and Poisson-Boltzmann (PB) calculations, we define the applicability of the PB approach with linear and nonlinear responses for macromolecular electrostatic interactions in electrolyte solution, revealing some physical mechanisms and limitations behind it especially due the raise of both macromolecular charge and concentration out of the strong coupling regime. A discrepancy between PB and MC for binding constant shifts is shown and explained in terms of the manner PB approximates the excess chemical potentials of the ligand, and not as a consequence of the nonlinear thermal treatment and/or explicit ion-ion interactions as it could be argued. Our findings also show that the nonlinear PB predictions with a low dielectric response well reproduce the pK shifts calculations carried out with an uniform dielectric model. This confirms and completes previous results obtained by both MC and linear PB calculations.

Development of Dielectric Elastomer Nanocomposites as Stretchable and Flexible Actuating Materials

NASA Astrophysics Data System (ADS)

Wang, Yu

Dielectric elastomers (DEs) are a new type of smart materials showing promising functionalities as energy harvesting materials as well as actuating materials for potential applications such as artificial muscles, implanted medical devices, robotics, loud speakers, micro-electro-mechanical systems (MEMS), tunable optics, transducers, sensors, and even generators due to their high electromechanical efficiency, stability, lightweight, low cost, and easy processing. Despite the advantages of DEs, technical challenges must be resolved for wider applications. A high electric field of at least 10-30 V/um is required for the actuation of DEs, which limits the practical applications especially in biomedical fields. We tackle this problem by introducing the multiwalled carbon nanotubes (MWNTs) in DEs to enhance their relative permittivity and to generate their high electromechanical responses with lower applied field level. This work presents the dielectric, mechanical and electromechanical properties of DEs filled with MWNTs. The micromechanics-based finite element models are employed to describe the dielectric, and mechanical behavior of the MWNT-filled DE nanocomposites. A sufficient number of models are computed to reach the acceptable prediction of the dielectric and mechanical responses. In addition, experimental results are analyzed along with simulation results. Finally, laser Doppler vibrometer is utilized to directly detect the enhancement of the actuation strains of DE nanocomposites filled with MWNTs. All the results demonstrate the effective improvement in the electromechanical properties of DE nanocomposites filled with MWNTs under the applied electric fields.

Direct Effect of Dielectric Surface Energy on Carrier Transport in Organic Field-Effect Transistors.

PubMed

Zhou, Shujun; Tang, Qingxin; Tian, Hongkun; Zhao, Xiaoli; Tong, Yanhong; Barlow, Stephen; Marder, Seth R; Liu, Yichun

2018-05-09

The understanding of the characteristics of gate dielectric that leads to optimized carrier transport remains controversial, and the conventional studies applied organic semiconductor thin films, which introduces the effect of dielectric on the growth of the deposited semiconductor thin films and hence only can explore the indirect effects. Here, we introduce pregrown organic single crystals to eliminate the indirect effect (semiconductor growth) in the conventional studies and to undertake an investigation of the direct effect of dielectric on carrier transport. It is shown that the matching of the polar and dispersive components of surface energy between semiconductor and dielectric is favorable for higher mobility. This new empirical finding may show the direct relationship between dielectric and carrier transport for the optimized mobility of organic field-effect transistors and hence show a promising potential for the development of next-generation high-performance organic electronic devices.

SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

NASA Astrophysics Data System (ADS)

Yongliang, Li; Qiuxia, Xu

2010-03-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

Effects of ionic concentration gradient on electroosmotic flow mixing in a microchannel.

PubMed

Peng, Ran; Li, Dongqing

2015-02-15

Effects of ionic concentration gradient on electroosmotic flow (EOF) mixing of one stream of a high concentration electrolyte solution with a stream of a low concentration electrolyte solution in a microchannel are investigated numerically. The concentration field, flow field and electric field are strongly coupled via concentration dependent zeta potential, dielectric constant and electric conductivity. The results show that the electric field and the flow velocity are non-uniform when the concentration dependence of these parameters is taken into consideration. It is also found that when the ionic concentration of the electrolyte solution is higher than 1M, the electrolyte solution essentially cannot enter the channel due to the extremely low electroosmotic flow mobility. The effects of the concentration dependence of zeta potential, dielectric constant and electric conductivity on electroosmotic flow mixing are studied. Copyright © 2014 Elsevier Inc. All rights reserved.

Band gaps in periodically magnetized homogeneous anisotropic media

NASA Astrophysics Data System (ADS)

Merzlikin, A. M.; Levy, M.; Vinogradov, A. P.; Wu, Z.; Jalali, A. A.

2010-11-01

In [A. M. Merzlikin, A. P. Vinogradov, A. V. Dorofeenko, M. Inoue, M. Levy, A. B. Granovsky, Physica B 394 (2007) 277] it is shown that in anisotropic magnetophotonic crystal made of anisotropic dielectric layers and isotropic magneto-optical layers the magnetization leads to formation of additional band gaps (BG) inside the Brillouin zones. Due to the weakness of the magneto-optical effects the width of these BG is much smaller than that of usual BG forming on the boundaries of Brillouin zones. In the present communication we show that though the anisotropy suppresses magneto-optical effects. An anisotropic magnetophotonic crystal made of anisotropic dielectric layers and anisotropic magneto-optical; the width of additional BG may be much greater than the width of the usual Brillouin BG. Anisotropy tends to suppress Brillouin zone boundary band gap formation because the anisotropy suppresses magneto-optical properties, while degenerate band gap formation occurs around points of effective isotropy and is not suppressed.

Effect of medium electrophysical parameters and their temperature dependences on wideband electromagnetic pulse propagation

NASA Astrophysics Data System (ADS)

Volkomirskaya, L. B.; Gulevich, O. A.; Reznikov, A. E.

2017-03-01

The dielectric permittivity of fiery spoil tips (Shakhty town, Rostov Region) is studied with the use of a GROT 12E remote-controlled ground-penetrating radar (GPR). An anomalous zone in a combustion source is shown to be clearly pronounced in GPR data due to the temperature dependence of the dielectric permittivity of these spoil tips. To substantiate this statement, the GPR data are compared with direct measurements of soil temperatures at depths from 1.5 to 2.5 m. The experimental results are compared with the variable spectral range of a GPR sounding pulse. GPR is shown to be a promising tool for the mapping of temperature-contrast underground objects.

Nonresonant Local Fields Enhance Second-Harmonic Generation from Metal Nanoislands with Dielectric Cover

NASA Astrophysics Data System (ADS)

Chervinskii, Semyon; Koskinen, Kalle; Scherbak, Sergey; Kauranen, Martti; Lipovskii, Andrey

2018-03-01

We study second-harmonic generation from gold nanoislands covered with amorphous titanium oxide (TiO2 ) films. As the TiO2 thickness increases, the plasmon resonance of the nanoislands shifts away from the second-harmonic wavelength of 532 nm, diminishing the resonant enhancement of the process at this wavelength. Nevertheless, the second-harmonic signal is enhanced by up to a factor of 45 with increasing TiO2 thickness. This unexpected effect arises from the scaling of local fields at the fundamental wavelength of 1064 nm—which is at the far tail of the resonance—due to a change in the dielectric environment of the nanoislands.

Gigantic magnetoelectric effect caused by magnetic-field-induced canted antiferromagnetic-paramagnetic transition in quasi-two-dimensional Ca2CoSi2O7 crystal

NASA Astrophysics Data System (ADS)

Akaki, M.; Tozawa, J.; Akahoshi, D.; Kuwahara, H.

2009-05-01

We have investigated the magnetic and dielectric properties of Ca2CoSi2O7 crystal. The dielectricity and magnetism of Ca2CoSi2O7 are strongly coupled below a canted antiferromagnetic transition temperature (TN). Magnetic fields induce electric polarization below TN. Interestingly, the magnetic-field-induced electric polarization is detected even without poling electric fields. Below TN, a canted antiferromagnetic-paramagnetic transition is induced by magnetic fields. The large magnetocapacitance is observed around TN. The origin of the large magnetocapacitance is due to the magnetic-field-induced the canted antiferromagnetic-paramagnetic transition.

Dielectric Measurements on Sol-Gel Derived Titania Films

NASA Astrophysics Data System (ADS)

Capan, Rifat; Ray, Asim K.

2017-11-01

Alternating current (AC) impedance measurements were performed on 37 nm thick nanostructured sol-gel derived anatase titania films on ultrasonically cleaned (100) p-silicon substrates at temperatures T ranging from 100 K to 300 K over a frequency range between 20 Hz and 1 MHz. The frequency-dependent behavior of the AC conductivity σ ac( f, T) obeys the universal power law, and the values of the effective hopping barrier and hopping distance were found to be 0.79 eV and 6.7 × 10-11 m from an analysis due to the correlated barrier-hopping model. The dielectric relaxation was identified as a thermally activated non-Debye process involving an activation energy of 41.5 meV.

Effects of concentration on the microwave dielectric spectra of aqueous urea solutions

NASA Astrophysics Data System (ADS)

Lyashchenko, A. K.; Dunyashev, V. S.; Zasetsky, A. Yu.

2017-05-01

Several models of relaxation for the dielectric spectra of aqueous urea solutions in the microwave region are compared. The spectra are shown to contain two main Debye components arising from the rotational motions of urea and water molecules. Two essentially different concentration regions in urea solutions are identified. The first is characterized by a small increase in the mobility of water molecules (τ1 = 7.8 ps) and the existence of hydrated urea molecules (τ2 = 19 ps). Due to the aggregation of urea molecules, the relaxation times for the latter process grow considerably in highly concentrated solutions. At the same time, faster molecular motions (τ3 = 6 ps) are observed for water molecules.

Dielectric spectroscopy on organic charge-transfer salts

NASA Astrophysics Data System (ADS)

Lunkenheimer, P.; Loidl, A.

2015-09-01

This topical review provides an overview of the dielectric properties of a variety of organic charge-transfer salts, based on both, data reported in literature and our own experimental results. Moreover, we discuss in detail the different processes that can contribute to the dielectric response of these materials. We concentrate on the family of the 1D (TMTTF)2 X systems and the 2D BEDT-TTF-based charge-transfer salts, which in recent years have attracted considerable interest due to their often intriguing dielectric properties. We will mainly focus on the occurrence of electronic ferroelectricity in these systems, which also includes examples of multiferroicity.

Dielectric spectroscopy on organic charge-transfer salts.

PubMed

Lunkenheimer, P; Loidl, A

2015-09-23

This topical review provides an overview of the dielectric properties of a variety of organic charge-transfer salts, based on both, data reported in literature and our own experimental results. Moreover, we discuss in detail the different processes that can contribute to the dielectric response of these materials. We concentrate on the family of the 1D (TMTTF)2 X systems and the 2D BEDT-TTF-based charge-transfer salts, which in recent years have attracted considerable interest due to their often intriguing dielectric properties. We will mainly focus on the occurrence of electronic ferroelectricity in these systems, which also includes examples of multiferroicity.

Investigations on the defect dipole induced pyroelectric current in multiferroic GdMnO3 system

NASA Astrophysics Data System (ADS)

Pal, A.; Dhana Sekhar, C.; Venimadhav, A.; Prellier, W.; Murugavel, P.

2018-01-01

Pyroelectric current measurements on the orthorhombic GdMnO3 polycrystalline sample are done to explore the intrinsic and extrinsic contributions. The measurements reveal poling temperature dependent pyrocurrent peaks at 20, 50 and 108 K. The pyrocurrent at 20 K and at 108 K are attributed to ferroelectric transition induced by the incommensurate spiral magnetic ordering of Mn spins and the release of trapped charges from the localized states, respectively. A detailed analysis on the broad pyrocurrent signal at 50 K suggests that it could be attributed to the thermally stimulated depolarization current effect due to the relaxation of defect dipoles induced by negatively charged Mn3+ ions and excess holes localized at Mn4+ sites. Importantly, the effect of the electric field due to the defect dipoles on the ferroelectric state is highlighted. The temperature dependent dielectric measurements under the magnetic field brought out the correlation between pyroelectric and dielectric properties. The influence of poling temperature dependent extrinsic effects on pyrocurrent suggests the choice of poling temperature on the study of polarization and the resultant multiferroicity in a spin-driven ferroelectric rare earth manganite system.

Dielectric properties and microstructure of sintered BaTiO3 fabricated by using mixed 150-nm and 80-nm powders with various additives

NASA Astrophysics Data System (ADS)

Oh, Min Wook; Kang, Jae Won; Yeo, Dong Hun; Shin, Hyo Soon; Jeong, Dae Yong

2015-04-01

Recently, the use of small-sized BaTiO3 particles for ultra-thin MLCC research has increased as a method for minimizing the dielectric layer's thickness in thick film process. However, when particles smaller than 100 nm are used, the reduced particle size leads to a reduced dielectric constant. The use of nanoparticles, therefore, requires an increase in the amount of additive used due to the increase in the specific surface area, thus increasing the production cost. In this study, a novel method of coating 150-nm and 80-nm BaTiO3 powders with additives and mixing them together was employed, taking advantage of the effect obtained through the use of BaTiO3 particles smaller than 100 nm, to conveniently obtain the desired dielectric constant and thermal characteristics. Also, the microstructure and the dielectric properties were evaluated. The additives Dy, Mn, Mg, Si, and Cr were coated on a 150-nm powder, and the additives Dy, Mn, Mg, and Si were coated on 80-nm powder, followed by mixing at a ratio of 1:1. As a result, the microstructure revealed grain formation according to the liquid-phase additive Si; additionally, densification was well realized. However, non-reducibility was not obtained, and the material became a semiconductor. When the amount of added Mn in the 150-nm powder was increased to 0.2 and 0.3 mol%, insignificant changes in the microstructure were observed, and the bulk density after mixing was found to have increased drastically in comparison to that before mixing. Also, non-reducibility was obtained for certain conditions. The dielectric property was found to be consistent with the densification and the grain size. The mixed composition #1-0.3 had a dielectric constant over 2000, and the result somewhat satisfied the dielectric constant temperature dependency for X6S.

Understanding the Effects of Defect Modification on the Structure and Properties of Fluorinated Polymers and Implications for Capacitive Energy Storage Technologies

NASA Astrophysics Data System (ADS)

Gadinski, Matthew R.

As the world begins to turn to alternative energy technologies and our electronic devices have become more both mobile and integral to everyday life, increasing interest has been focused on energy storage technologies. Capacitors are one of these energy storage technologies that utilize the polarization of an insulating material sandwiched by two electrodes as a means to store electric charge. Polymers are a preferred dielectric material for capacitors because of both their performance and practicality. However, polymer dielectrics are limited in energy density by low dielectric constant, and high loss at elevated temperature. This work aims to address these issues in order to enable polymer dielectrics for future applications and demands. As most polymer tend to have low dielectric constants (˜2-3), but impressive breakdown strengths, only a moderate improvement in dielectric constant has the potential to vastly improve the energy density of polymer capacitors. As such tremendous interest has been placed on poly(vinylidene fluoride) (PVDF) which has a dielectric of 10+ due to the highly polar C-F bonds of its backbone. To improve PVDF's performance defect monomers have been introduced to tailor the polymorphic crystalline phase to tune its properties. Additionally, this defect modification has implications for piezoelectric, electrocaloric, and thermoelectric applications of PVDF. In Chapter 2 a copolymer of VDF and bromotrifluoroethylene (BTFE) was produced. The effect of BTFE on the structure and dielectric properties of the resulting copolymer had not been previously evaluated, and its synthesis allowed for the comparison to previously reported VDF based copolymers including P(VDF-CTFE) and P(VDF-HFP). Through 19F NMR it was determined due to reactivity ratio differences of BTFE in comparison to previously explored copolymers, BTFE during synthesis is much more likely to link with itself. This results in long runs of BTFE-BTFE defects along with isolated single defects. These long runs are found to have dramatic effects on the distribution of chain conformations determined from FTIR, the melting temperature and total crystallinity determined by DSC, and the crystallite size, lattice spacing, and crystalline phase as determined by XRD. These results indicate that P(VDF-BTFE) has a mix of both included (single) and excluded defects (runs of defects) that rapidly inhibit crystallinity and alter phase. The dielectric analysis also confirmed this by a broadening of the Tg peak in the temperature dependent dielectric spectroscopy with increasing BTFE content in the monomer feed indicative of expansion of the interlamellar region due to defect exclusion. Chapter 3 explores P(VDF-BTFE) copolymers for capacitive energy storage. Due to the rapid decrease in crystallinity only low concentration copolymers (>2 mol %) BTFE were used. This was ultimately a result of stretching being required for high energy density to be exhibited. The 0.5 mol% BTFE copolymer samples was found to possess a discharge energy density of 20.8 J/cm 3 at 750 MV/m along with the highest breakdown strength of any reported PVDF based copolymer. It was found that for this small amount of defect monomer the gamma phase of PVDF was stabilized and mixed with beta phase and along with small crystallite size accounted for the high breakdown strength and energy density. Additionally, by utilizing only a small amount of defect monomer the decrease in crystallinity and melting temperature observed in previously examined PVDF copolymers was avoided. Chapter 4 examines a terpolymer of VDF, trifluoroethylene (TrFE), and chlorotrifluoroethylene (CTFE). The terpolymers of VDF have gained extensive interest as the use of the two defect monomer increases the dielectric constant to 40+ along with altering the polarization behavior from a normal ferroelectric to a relaxor ferroelectric characterized by a slim hysteresis loop. The current understanding of this behavior suggests that only the size of the third bulky monomer (CTFE in this case) determines whether a single hysteresis (SHL) or double hysteresis loop (DHL) will develop. This chapter shows that for a single composition of the terpolymer normal ferroelectric, SHL, and DHL behavior can be tuned through processing of the film. This was rationalized as films give long times to crystallize developed large ferroelectric domains within a paraelectric matrix resulting in the DHL behavior due to reversible switching of these domains. While if these films were stretched below the Tc SHL behavior was observed as this had the effect of dispersing these domains within the crystal. Chapter 5 changes focus to high temperature performance of polymer capacitors. The primary strategy to enable high temperature polymer capacitors has been the utilization of high Tg polymers because of their thermal stability. While these polymers have demonstrated stable dielectric properties at low field and high breakdown strengths at elevated temperatures, the high field loss limits their use at even mildly elevated temperature well below T g. Additionally, these polymers are expensive, brittle, and difficult to process, essentially defeating some of the primary reasons for utilizing a polymer in the first place. This chapter examines a commercially available, extrudable, high temperature fluoropolymer, known as polychlorotrifluoroethylene (PCTFE). The same defect monomer discussed with PVDF above. While this polymer showed comparable performance to BOPP at room temperature, it showed equally susceptible to high field loss at elevated temperature. However, the chlorine of the monomers allow for crosslinking of this polymer by commercially used peroxide/co-agent chemistry. Crosslinking lead to a substantial improvement of the crosslinked film over the pristine polymer, and superior energy density to the commercial high Tg polymers up to 150 °C. The reason for the improvement was found to be the formation of chemical defects produced during the crosslinking that were excluded from the crystalline phase. Through TSDC it was found that these defects concentrated in the interlamellar region led to a substantial enhancement of the charge trapping properties of this relaxation.

Significantly Enhanced Dielectric Performances and High Thermal Conductivity in Poly(vinylidene fluoride)-Based Composites Enabled by SiC@SiO2 Core-Shell Whiskers Alignment.

PubMed

He, Dalong; Wang, Yao; Song, Silong; Liu, Song; Deng, Yuan

2017-12-27

Design of composites with ordered fillers arrangement results in anisotropic performances with greatly enhanced properties along a specific direction, which is a powerful tool to optimize physical properties of composites. Well-aligned core-shell SiC@SiO 2 whiskers in poly(vinylidene fluoride) (PVDF) matrix has been achieved via a modified spinning approach. Because of the high aspect ratio of SiC whiskers, strong anisotropy and significant enhancement in dielectric constant were observed with permittivity 854 along the parallel direction versus 71 along the perpendicular direction at 20 vol % SiC@SiO 2 loading, while little increase in dielectric loss was found due to the highly insulating SiO 2 shell. The anisotropic dielectric behavior of the composite is perfectly understood macroscopically to have originated from anisotropic intensity of interfacial polarization based on an equivalent circuit model of two parallel RC circuits connected in series. Furthermore, finite element simulations on the three-dimensional distribution of local electric field, polarization, and leakage current density in oriented SiC@SiO 2 /PVDF composites under different applied electrical field directions unambiguously revealed that aligned core-shell SiC@SiO 2 whiskers with a high aspect ratio significantly improved dielectric performances. Importantly, the thermal conductivity of the composite was synchronously enhanced over 7 times as compared to that of PVDF matrix along the parallel direction at 20 vol % SiC@SiO 2 whiskers loading. This study highlights an effective strategy to achieve excellent comprehensive properties for high-k dielectrics.

Development of anatomically and dielectrically accurate breast phantoms for microwave imaging applications

NASA Astrophysics Data System (ADS)

O'Halloran, M.; Lohfeld, S.; Ruvio, G.; Browne, J.; Krewer, F.; Ribeiro, C. O.; Inacio Pita, V. C.; Conceicao, R. C.; Jones, E.; Glavin, M.

2014-05-01

Breast cancer is one of the most common cancers in women. In the United States alone, it accounts for 31% of new cancer cases, and is second only to lung cancer as the leading cause of deaths in American women. More than 184,000 new cases of breast cancer are diagnosed each year resulting in approximately 41,000 deaths. Early detection and intervention is one of the most significant factors in improving the survival rates and quality of life experienced by breast cancer sufferers, since this is the time when treatment is most effective. One of the most promising breast imaging modalities is microwave imaging. The physical basis of active microwave imaging is the dielectric contrast between normal and malignant breast tissue that exists at microwave frequencies. The dielectric contrast is mainly due to the increased water content present in the cancerous tissue. Microwave imaging is non-ionizing, does not require breast compression, is less invasive than X-ray mammography, and is potentially low cost. While several prototype microwave breast imaging systems are currently in various stages of development, the design and fabrication of anatomically and dielectrically representative breast phantoms to evaluate these systems is often problematic. While some existing phantoms are composed of dielectrically representative materials, they rarely accurately represent the shape and size of a typical breast. Conversely, several phantoms have been developed to accurately model the shape of the human breast, but have inappropriate dielectric properties. This study will brie y review existing phantoms before describing the development of a more accurate and practical breast phantom for the evaluation of microwave breast imaging systems.

Graphene-clad tapered fiber: effective nonlinearity and propagation losses.

PubMed

Gorbach, A V; Marini, A; Skryabin, D V

2013-12-15

We derive a pulse propagation equation for a graphene-clad optical fiber, treating the optical response of the graphene and nonlinearity of the dielectric fiber core as perturbations in asymptotic expansion of Maxwell equations. We analyze the effective nonlinear and attenuation coefficients due to the graphene layer. Based on the recent experimental measurements of the nonlinear graphene conductivity, we predict considerable enhancement of the effective nonlinearity for subwavelength fiber core diameters.

Virtual Laboratory Environment for High Voltage Radiation Source Experiments

DTIC Science & Technology

2005-05-01

Dielectric ," Phys. Rev. Lett. 80, 103 (1998). 26.A. Valfells, J. P. Verboncoeur and Y. Y. Lau, " Space charge effects on multipactor on a dielec... effects at the edges of the surface, or due to space charge effects if a plasma is formed at the surface. High density multipactor can result in... multipactors , which can cause significant reflection and absorption of microwave power as well as space charge effects . X-rays can also

Plasmon-polariton distributed-feedback laser pumped by a fast drift current in graphene

NASA Astrophysics Data System (ADS)

Zolotovskii, Igor O.; Dadoenkova, Yuliya S.; Moiseev, Sergey G.; Kadochkin, Aleksei S.; Svetukhin, Vyacheslav V.; Fotiadi, Andrei A.

2018-05-01

We propose a model of a slow surface plasmon-polariton distributed-feedback laser with pump by drift current. The amplification in the dielectric-semiconducting film-dielectric waveguide structure is created by fast drift current in the graphene layer, placed at the semiconductor/dielectric interface. The feedback is provided due to a periodic change in the thickness of the semiconducting film. We have shown that in such a system it is possible to achieve surface plasmon-polariton generation in the terahertz region.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xiaoming; Lan, Chuwen; Li, Bo

We numerically and experimentally demonstrated a polarization insensitive dual-band metamaterial perfect absorber working in wide incident angles based on the two magnetic Mie resonances of a single dielectric “atom” with simple structure. Two absorption bands with simulated absorptivity of 99% and 96%, experimental absorptivity of 97% and 94% at 8.45 and 11.97 GHz were achieved due to the simultaneous magnetic and electric resonances in dielectric “atom” and copper plate. Mie resonances of dielectric “atom” provide a simple way to design metamaterial perfect absorbers with high symmetry.

Disorder-Enhanced Dielectric Response of Nanoscale and Mesoscopic Insulators

NASA Astrophysics Data System (ADS)

Onoda, Shigeki; Chern, Chyh-Hong; Murakami, Shuichi; Ogimoto, Yasushi; Nagaosa, Naoto

2006-12-01

Enhancement of the dielectric response of insulators by disorder is theoretically proposed, where the quantum interference of electronic waves through the nanoscale or mesoscopic system and its change due to external perturbations control the polarization. In the disordered case with all the states being localized, the resonant tunneling, which is topologically protected, plays a crucial role, and enhances the dielectric response by a factor 30 40 compared with the pure case. The realization of this idea with accessible materials or structures is also discussed.

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film.

PubMed

Park, Jeongmin; Kang, Haeyong; Kang, Kyeong Tae; Yun, Yoojoo; Lee, Young Hee; Choi, Woo Seok; Suh, Dongseok

2016-03-09

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.

Metastable Ar(1 s5) density dependence on pressure and argon-helium mixture in a high pressure radio frequency dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Emmons, D. J.; Weeks, D. E.; Eshel, B.; Perram, G. P.

2018-01-01

Simulations of an α-mode radio frequency dielectric barrier discharge are performed for varying mixtures of argon and helium at pressures ranging from 200 to 500 Torr using both zero and one-dimensional models. Metastable densities are analyzed as a function of argon-helium mixture and pressure to determine the optimal conditions, maximizing metastable density for use in an optically pumped rare gas laser. Argon fractions corresponding to the peak metastable densities are found to be pressure dependent, shifting from approximately 15% Ar in He at 200 Torr to 10% at 500 Torr. A decrease in metastable density is observed as pressure is increased due to a diminution in the reduced electric field and a quadratic increase in metastable loss rates through A r2* formation. A zero-dimensional effective direct current model of the dielectric barrier discharge is implemented, showing agreement with the trends predicted by the one-dimensional fluid model in the bulk plasma.

High-efficient light absorption of monolayer graphene via cylindrical dielectric arrays and the sensing application

NASA Astrophysics Data System (ADS)

Zhou, Peng; Zheng, Gaige

2018-04-01

The efficiency of graphene-based optoelectronic devices is typically limited by the poor absolute absorption of light. A hybrid structure of monolayer graphene with cylindrical titanium dioxide (TiO2) array and aluminum oxide (Al2O3) spacer layer on aluminum (Al) substrate has been proposed to enhance the absorption for two-dimensional (2D) materials. By combining dielectric array with metal substrate, the structure achieves multiple absorption peaks with near unity absorbance at near-infrared wavelengths due to the resonant effect of dielectric array. Completed monolayer graphene is utilized in the design without any demand of manufacture process to form the periodic patterns. Further analysis indicates that the near-field enhancement induced by surface modes gives rise to the high absorption. This favorable field enhancement and tunability of absorption not only open up new approaches to accelerate the light-graphene interaction, but also show great potential for practical applications in high-performance optoelectronic devices, such as modulators and sensors.

Electromechanical response of silicone dielectric elastomers

NASA Astrophysics Data System (ADS)

Cârlescu, V.; Prisăcaru, G.; Olaru, D.

2016-08-01

This paper presents an experimental technique to investigate the electromechanical properties of silicone dielectric elastomers actuated with high DC electric fields. A non-contact measurement technique is used to capture and monitor the thickness strain (contraction) of a circular film placed between two metallic disks electrodes. Two active fillers such as silica (10, 15 and 30 wt%) and barium titanate (5 and 15 wt%) were incorporated in order to increase the actuation performance. Thickness strain was measured at HV stimuli up to 4.5 kV and showed a quadratic dependence against applied electric field indicating that the induced strain is triggered by the Maxwell effect and/or electrostriction phenomenon as reported in literature. The actuation process evidences a rapid contraction upon HV activation and a slowly relaxation when the electrodes are short-circuit due to visco-elastic nature of elastomers. A maximum of 1.22 % thickness strain was obtained at low actuating field intensity (1.5 V/pm) comparable with those reported in literature for similar dielectric elastomer materials.

A novel approach for the fine tuning of resonance frequency of patch antenna

NASA Astrophysics Data System (ADS)

Mathur, Monika; Singh, Ghanshyam; Bhatnagar, S. K.

2013-01-01

When a patch antenna is fabricated, dimensions of the patch may be slightly different from the designed values due to tolerances in the fabrication process. This alters the resonance frequency of the antenna. To overcome this problem this paper presents a new design approach for fine tuning the resonance frequency by dielectric constant engineering. This approach is especially suited to low temperature co-fired ceramic (LTCC) and similar processes where the antenna dielectric is composed of several layers. Composite dielectric constant of this multilayer structure is altered in such a way that the resonant frequency is set back to the designed value. It has been verified that for proposed micro strip antenna (MSA) design, the frequency-area curve follows a quadratic relation with a variable R (Ratio of cavity area to the patch area). This mathematical model is true up to R 1.27. After this saturation effects set in and the curve follows a straight line behavior.≡

Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer.

PubMed

Pang, Chin-Sheng; Hwu, Jenn-Gwo

2014-01-01

Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO2/SiO2/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for device with stacking structure would be less than that of without stacking structure due to a higher breakdown field and larger breakdown power. In addition, the role of interfacial layer (IL) in the control of the interface trap density (D it) and device reliability is also analyzed. Device with a thicker IL introduces a higher breakdown field and also a lower D it. High-resolution transmission electron microscopy (HRTEM) of the samples with different IL thicknesses is provided to confirm that IL is needed for good interfacial property.

Electrical detection of ortho–para conversion in fullerene-encapsulated water

PubMed Central

Meier, Benno; Mamone, Salvatore; Concistrè, Maria; Alonso-Valdesueiro, Javier; Krachmalnicoff, Andrea; Whitby, Richard J.; Levitt, Malcolm H.

2015-01-01

Water exists in two spin isomers, ortho and para, that have different nuclear spin states. In bulk water, rapid proton exchange and hindered molecular rotation obscure the direct observation of two spin isomers. The supramolecular endofullerene H2O@C60 provides freely rotating, isolated water molecules even at cryogenic temperatures. Here we show that the bulk dielectric constant of this substance depends on the ortho/para ratio, and changes slowly in time after a sudden temperature jump, due to nuclear spin conversion. The attribution of the effect to ortho–para conversion is validated by comparison with nuclear magnetic resonance and quantum theory. The change in dielectric constant is consistent with an electric dipole moment of 0.51±0.05 Debye for an encapsulated water molecule, indicating the partial shielding of the water dipole by the encapsulating cage. The dependence of bulk dielectric constant on nuclear spin isomer composition appears to be a previously unreported physical phenomenon. PMID:26299447

Growth, structural, optical, thermal and dielectric properties of lanthanum chloride—thiourea—L tartaric acid coordinated complex

NASA Astrophysics Data System (ADS)

Slathia, Goldy; Bamzai, K. K.

2017-11-01

Lanthanum chloride—thiourea—l tartaric acid coordinated complex was grown in the form of single crystal by slow evaporation of supersaturated solutions at room temperature. This coordinated complex crystallizes in orthorhombic crystal system having space group P nma. The crystallinity and purity was tested by powder x-ray diffraction. Fourier transform infra red and Raman spectroscopy analysis provide the evidences on structure and mode of coordination. The scanning electron microscopy (SEM) analysis shows the morphology evolution as brought by the increase in composition of lanthanum chloride. The band transitions due to C=O and C=S chromophores remain active in grown complexes and are recorded in the UV-vis optical spectrum. The thermal effects such as dehydration, melting and decomposition were observed by the thermogravimetric and differential thermo analytical (TGA/DTA) analysis. Electrical properties were studied by dielectric analysis in frequency range 100-30 MHz at various temperatures. Increase in values of dielectric constant was observed with change in lanthanum concentration in the coordinated complex.

Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectric.

PubMed

Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

2014-02-28

Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene-graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene-graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm(2) V(-1) s(-1) and a threshold voltage of -0.7 V at V(gs) = -40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm(2) V(-1) s(-1) and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies.

Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

PubMed Central

Heo, Jae Sang; Choi, Seungbeom; Jo, Jeong-Wan; Kang, Jingu; Park, Ho-Hyun; Kim, Yong-Hoon; Park, Sung Kyu

2017-01-01

In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL) can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm2/Vs were achieved (maximum mobility of 24 cm2/Vs). Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric. PMID:28772972

2D Thermoluminescence imaging of dielectric surface long term charge memory of plasma surface interaction in DBD discharges

NASA Astrophysics Data System (ADS)

Ambrico, Paolo F.; Ambrico, Marianna; Schiavulli, Luigi; De Benedictis, Santolo

2014-07-01

The charge trapping effect due to the exposure of alumina surfaces to plasma has been studied in a volume dielectric barrier discharge (DBD) in Ar and He noble gases. The long lasting charge trapping of alumina dielectric plates, used as barriers in DBDs, is evidenced by an ex situ thermoluminescence (TL) experiment performed with a standard and a custom two-dimensional (2D)-TL apparatus. The spatial density of trapped surface charges is found to be strongly correlated to the plasma morphology, and the surface spatial memory lasted for several minutes to hours after plasma exposure. In the case of Ar, the plasma channel impact signature on the surface shows a higher equivalent radiation dose with respect to the surface plasma wave and the post-discharge species signature. As a consequence, for the development of discharges, inside the dielectric surface the availability of lower energy trapped electrons is larger in the first region of plasma impact. The reported spatial memory increases the likelihood of the occurrence of plasma filaments in the same position in different runs. In He plasmas, the dielectric barrier shows an almost uniform distribution of trapped charges, meaning that there is no preferred region for the development of the discharge. In all cases a slight asymmetry was shown in the direction of the gas flow. This can be interpreted as being due to the long-living species moving in the direction of the gas flow, corresponding with the TL side experiment on the sample exposed to the plasma afterglow. The maximum values and the integral of the 2D-TL images showed a linear relation with the total charge per ac cycle, corresponding with findings for the TL glow curve. In conclusion, 2D-TL images allow the retrieval of information regarding the plasma surface interaction such as the plasma morphology, trap sites and their activation temperature.

Improved longitudinal magneto-optic Kerr effect signal contrast from nanomagnets with dielectric coatings

NASA Astrophysics Data System (ADS)

Holiday, L. F.; Gibson, U. J.

2006-12-01

We report on the use of dielectric coatings to improve the contrast of longitudinal magneto-optic Kerr effect signals from submicron magnetic structures. Electron-beam lithography was used to define disks in 22 nm thick Ni films deposited on Si substrates. The structures were measured in four configurations: as-deposited, through a fused silica prism using index-matching fluid, coated with ZnS, and using a prism on top of the ZnS layer. The modified samples show up to 20 times improvement in the MOKE contrast due to admittance matching to the magnetic material and suppression of the substrate reflectance. The behavior is successfully predicted by a model that includes the magneto-optic response of the nickel layer and accounts for the fraction of the beam intercepted by the magnetic structure.

An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials.

PubMed

Yang, Hang; Qin, Shiqiao; Zheng, Xiaoming; Wang, Guang; Tan, Yuan; Peng, Gang; Zhang, Xueao

2017-09-22

We fabricated 70 nm Al₂O₃ gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al₂O₃/Si substrate is superior to that on a traditional 300 nm SiO₂/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al₂O₃/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS₂, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices.

Solitary waves of surface plasmon polariton via phase shifts under Doppler broadening and Kerr nonlinearity

NASA Astrophysics Data System (ADS)

Ahmad, S.; Ahmad, A.; Bacha, B. A.; Khan, A. A.; Abdul Jabar, M. S.

2017-12-01

Surface Plasmon Polaritons (SPPs) are theoretically investigated at the interface of a dielectric metal and gold. The output pulse from the dielectric is used as the input pulse for the generation of SPPs. The SPPs show soliton-like behavior at the interface. The solitary form of a SPP is maintained under the effects of Kerr nonlinearity, Doppler broadening and Fresnel dragging whereas its phase shift is significantly modified. A 0.3radian phase shift is calculated in the presence of both Kerr nonlinearity and Fresnel dragging in the absence of plasma motion. The phase shift is enhanced to 60radian due to the combined effect of Doppler broadening, Kerr nonlinearity and Fresnel dragging. The results may have significant applications in nano-photonics, optical tweezers, photovoltaic devices, plasmonster and sensing technology.

Disappearance of dielectric anomaly in spite of presence of structural phase transition in reduced BaTiO3: Effect of defect states within the bandgap

NASA Astrophysics Data System (ADS)

Sagdeo, Archna; Nagwanshi, Anjali; Pokhriyal, Preeti; Sinha, A. K.; Rajput, Parasmani; Mishra, Vikash; Sagdeo, P. R.

2018-04-01

We report the structural, optical, ferroelectric, and dielectric properties of reduced BaTiO3 samples. For this purpose, oxygen vacancies in BaTiO3 are created by heating these samples with a Ti metal in a vacuum environment at different temperatures. It is observed that with an increase in oxygen deficiencies, the c/a ratio decreases as compared to that of the oxygen treated sample. The ferroelectric properties of the oxygen deficient samples are visibly different as compared to those of the oxygen treated sample. The disappearance of the P-E loop and the anomaly in the temperature variation of the dielectric constant have been observed; however, the structural phase transition corresponding to ferroelectric phase transitions still persists. Thus, it appears that the anomaly in dielectric data and the presence of the P-E loop are getting masked possibly by the Maxwell-Wagner effect. The presence of Ti+3 states in the prepared samples has been confirmed by X-ray absorption near edge structure measurements. The Kubelka-Munk optical absorption shows the presence of extra states below fundamental transition, indicating the emergence of new electronic states within the bandgap, which might be due to Ti+3 states. These new states appear at different energy positions, and with different intensities for different samples, which are reduced in the presence of Ti. These new states within the bandgap appear to modify the electronic structure, thereby reducing the overall bandgap, and hence, they seem to modify the ferroelectric and dielectric properties of the samples. Our results may be treated as experimental evidence for theoretically proposed defect states in oxygen deficient or reduced BaTiO3.

Effect of Temperature and Hydration Level on Purple Membrane Dynamics Studied Using Broadband Dielectric Spectroscopy from Sub-GHz to THz Regions.

PubMed

Yamamoto, Naoki; Ito, Shota; Nakanishi, Masahiro; Chatani, Eri; Inoue, Keiichi; Kandori, Hideki; Tominaga, Keisuke

2018-02-01

To investigate the effects of temperature and hydration on the dynamics of purple membrane (PM), we measured the broadband complex dielectric spectra from 0.5 GHz to 2.3 THz using a vector network analyzer and terahertz time-domain spectroscopy from 233 to 293 K. In the lower temperature region down to 83 K, the complex dielectric spectra in the THz region were also obtained. The complex dielectric spectra were analyzed through curve fitting using several model functions. We found that the hydrated states of one relaxational mode, which was assigned as the coupled motion of water molecules with the PM surface, began to overlap with the THz region at approximately 230 K. On the other hand, the relaxational mode was not observed for the dehydrated state. On the basis of this result, we conclude that the protein-dynamical-transition-like behavior in the THz region is due to the onset of the overlap of the relaxational mode with the THz region. Temperature hysteresis was observed in the dielectric spectrum at 263 K when the hydration level was high. It is suggested that the hydration water behaves similarly to supercooled liquid at that temperature. The third hydration layer may be partly formed to observe such a phenomenon. We also found that the relaxation time is slower than that of a globular protein, lysozyme, and the microscopic environment in the vicinity of the PM surface is suggested to be more heterogeneous than lysozyme. It is proposed that the spectral overlap of the relaxational mode and the low-frequency vibrational mode is necessary for the large conformational change of protein.

Long-range coupling between ATP-binding and lever-arm regions in myosin via dielectric allostery

NASA Astrophysics Data System (ADS)

Sato, Takato; Ohnuki, Jun; Takano, Mitsunori

2017-12-01

A protein molecule is a dielectric substance, so the binding of a ligand is expected to induce dielectric response in the protein molecule, considering that ligands are charged or polar in general. We previously reported that binding of adenosine triphosphate (ATP) to molecular motor myosin actually induces such a dielectric response in myosin due to the net negative charge of ATP. By this dielectric response, referred to as "dielectric allostery," spatially separated two regions in myosin, the ATP-binding region and the actin-binding region, are allosterically coupled. In this study, from the statistically stringent analyses of the extensive molecular dynamics simulation data obtained in the ATP-free and the ATP-bound states, we show that there exists the dielectric allostery that transmits the signal of ATP binding toward the distant lever-arm region. The ATP-binding-induced electrostatic potential change observed on the surface of the main domain induced a movement of the converter subdomain from which the lever arm extends. The dielectric response was found to be caused by an underlying large-scale concerted rearrangement of the electrostatic bond network, in which highly conserved charged/polar residues are involved. Our study suggests the importance of the dielectric property for molecular machines in exerting their function.

Stress effects in ferroelectric perovskite thin-films

NASA Astrophysics Data System (ADS)

Zednik, Ricardo Johann

The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution synchrotron x-ray diffraction indicates that a small effective restoring stress of about 1 MPa acts on the domain walls in these nano-crystalline PZT films. This insight allows reversible control of the ferroelectric and dielectric behavior of these important functional oxide materials, with important implications for associated integrated devices.

Cognitive training transfer using a personal computer-based game: A close quarters battle case study

NASA Astrophysics Data System (ADS)

Woodman, Michael D.

In this dissertation, liquid crystal (LC) materials and devices are investigated in order to meet the challenges for photonics and displays applications. We have studied three kinds of liquid crystal materials: positive dielectric anisotropic LCs, negative dielectric anisotropic LCs, and dual-frequency LCs. For the positive dielectric anisotropic LCs, we have developed some high birefringence isothiocyanato tolane LC compounds with birefringence ˜0.4, and super high birefringence isothiocyanato biphenyl-bistolane LC compounds with birefringence as high as ˜0.7. Moreover, we have studied the photostability of several high birefringence LC compounds, mixtures, and LC alignment layers in order to determine the failure mechanism concerning the lifetime of LC devices. Although cyano and isothiocyanato LC compounds have similar absorption peaks, the isothiocyanato compounds are more stable than their cyano counterparts under the same illumination conditions. This ultraviolet-durable performance of isothiocyanato compounds originates from its molecular structure and the delocalized electron distribution. We have investigated the alignment performance of negative dielectric anisotropic LCs in homeotropic (vertical aligned, VA) LC cell. Some (2, 3) laterally difluorinated biphenyls, terphenyls and tolanes are selected for this study. Due to the strong repulsive force between LCs and alignment layer, (2,3) laterally difluorinated terphenyls and tolanes do not align well in a VA cell resulting in a poor contrast ratio for the LC panel. We have developed a novel method to suppress the light leakage at dark state. By doping positive Deltaepsilon or non-polar LC compounds or mixtures into the host negative LC mixtures, the repulsive force is reduced and the cell exhibits an excellent dark state. In addition, these dopants increase the birefringence and reduce the viscosity of the host LCs which leads to a faster response time. In this dissertation, we investigate the dielectric heating effect of dual-frequency LCs. Because the absorption peak of imaginary dielectric constant occurs at high frequency region (˜ MHz), there is a heat generated when the LC cell is operated at a high frequency voltage. We have formulated a new dual-frequency LC mixture which greatly reduces the dielectric heating effect while maintaining good physical properties. Another achievement in this thesis is that we have developed a polarization independent phase modulator by using a negative dielectric anisotropic LC gel. (Abstract shortened by UMI.)

Comparison of three-dimensional poisson solution methods for particle-based simulation and inhomogeneous dielectrics.

PubMed

Berti, Claudio; Gillespie, Dirk; Bardhan, Jaydeep P; Eisenberg, Robert S; Fiegna, Claudio

2012-07-01

Particle-based simulation represents a powerful approach to modeling physical systems in electronics, molecular biology, and chemical physics. Accounting for the interactions occurring among charged particles requires an accurate and efficient solution of Poisson's equation. For a system of discrete charges with inhomogeneous dielectrics, i.e., a system with discontinuities in the permittivity, the boundary element method (BEM) is frequently adopted. It provides the solution of Poisson's equation, accounting for polarization effects due to the discontinuity in the permittivity by computing the induced charges at the dielectric boundaries. In this framework, the total electrostatic potential is then found by superimposing the elemental contributions from both source and induced charges. In this paper, we present a comparison between two BEMs to solve a boundary-integral formulation of Poisson's equation, with emphasis on the BEMs' suitability for particle-based simulations in terms of solution accuracy and computation speed. The two approaches are the collocation and qualocation methods. Collocation is implemented following the induced-charge computation method of D. Boda et al. [J. Chem. Phys. 125, 034901 (2006)]. The qualocation method is described by J. Tausch et al. [IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 20, 1398 (2001)]. These approaches are studied using both flat and curved surface elements to discretize the dielectric boundary, using two challenging test cases: a dielectric sphere embedded in a different dielectric medium and a toy model of an ion channel. Earlier comparisons of the two BEM approaches did not address curved surface elements or semiatomistic models of ion channels. Our results support the earlier findings that for flat-element calculations, qualocation is always significantly more accurate than collocation. On the other hand, when the dielectric boundary is discretized with curved surface elements, the two methods are essentially equivalent; i.e., they have comparable accuracies for the same number of elements. We find that ions in water--charges embedded in a high-dielectric medium--are harder to compute accurately than charges in a low-dielectric medium.

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ziwen; Xue, Zhongying; Zhang, Miao

Direct growth of graphene on dielectric substrates is a prerequsite for the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis directly on dielectric substrates always involves metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. We propose herein a semiconducting Ge-assisted chemical vapor deposition approach to directly grow monolayer graphene on arbitrary dielectric substrates. By pre-patterning of catalytic Ge layer, the graphene with desired pattern can be achieved with extreme ease. Due to the catalysis of Ge, monolayer graphene is able to form on Ge covered dielectric substrates including SiOmore » 2/Si, quartz glass and sapphire substrates. Optimization of the process parameters leads to the complete sublimation of catalytic Ge layer during or immediately after monolayer graphene formation, thus resulting in direct deposition of large-area continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on transparent dielectric substrate using the proposed approach has exhibited wide applications, e.g., in defogger and in thermochromic displays, with both devices possessing excellent performances.« less

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices

DOE PAGES

Wang, Ziwen; Xue, Zhongying; Zhang, Miao; ...

2017-05-31

Direct growth of graphene on dielectric substrates is a prerequsite for the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis directly on dielectric substrates always involves metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. We propose herein a semiconducting Ge-assisted chemical vapor deposition approach to directly grow monolayer graphene on arbitrary dielectric substrates. By pre-patterning of catalytic Ge layer, the graphene with desired pattern can be achieved with extreme ease. Due to the catalysis of Ge, monolayer graphene is able to form on Ge covered dielectric substrates including SiOmore » 2/Si, quartz glass and sapphire substrates. Optimization of the process parameters leads to the complete sublimation of catalytic Ge layer during or immediately after monolayer graphene formation, thus resulting in direct deposition of large-area continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on transparent dielectric substrate using the proposed approach has exhibited wide applications, e.g., in defogger and in thermochromic displays, with both devices possessing excellent performances.« less

Dielectric Properties of Ca0.7Bi0.3Ti0.7Cr0.3O3 (CBTC)-CaCu3Ti4O12 (CCTO) Composite

NASA Astrophysics Data System (ADS)

Mallmann, E. J. J.; Silva, M. A. S.; Sombra, A. S. B.; Botelho, M. A.; Mazzetto, S. E.; de Menezes, A. S.; Almeida, A. F. L.; Fechine, P. B. A.

2015-01-01

The main object of this work is to study two materials with giant dielectric constants: CaCu3Ti4O12 (CCTO) and Ca0.7Bi0.3Ti0.7Cr0.3O3 (CBTC). CBTC1- x -CCTO x composites were also obtained to create a new dielectric material with dielectric properties between these two phases. Structural properties were studied by x-ray powder diffraction (XRPD), Fourier transform infrared spectroscopy (FT-IR), Raman spectroscopy and dielectric measurements. CCTO showed a cubic phase and CBTC an orthorhombic phase. An interesting result was that the dielectric constant ( K) did not follow the rule of the mixture of Lichtnecker, and this happened due to the presence of other phases of its crystalline structure, which decreases the value of K when compared to the predicted values of Lichtnecker. It was also found that the dielectric properties of the composite are very promising for use in microelectronics, according to the miniaturization factor, which is crucial for those applications.

Amplifying Dynamic Nuclear Polarization of Frozen Solutions by Incorporating Dielectric Particles

PubMed Central

2014-01-01

There is currently great interest in understanding the limits on NMR signal enhancements provided by dynamic nuclear polarization (DNP), and in particular if the theoretical maximum enhancements can be achieved. We show that over a 2-fold improvement in cross-effect DNP enhancements can be achieved in MAS experiments on frozen solutions by simply incorporating solid particles into the sample. At 9.4 T and ∼105 K, enhancements up to εH = 515 are obtained in this way, corresponding to 78% of the theoretical maximum. We also underline that degassing of the sample is important to achieve highest enhancements. We link the amplification effect to the dielectric properties of the solid material, which probably gives rise to scattering, diffraction, and amplification of the microwave field in the sample. This is substantiated by simulations of microwave propagation. A reduction in sample heating at a given microwave power also likely occurs due to reduced dielectric loss. Simulations indicate that the microwave field (and thus the DNP enhancement) is inhomogeneous in the sample, and we deduce that in these experiments between 5 and 10% of the solution actually yields the theoretical maximum signal enhancement of 658. The effect is demonstrated for a variety of particles added to both aqueous and organic biradical solutions. PMID:25285480

Comparative analysis of full-gate and short-gate dielectric modulated electrically doped Tunnel-FET based biosensors

NASA Astrophysics Data System (ADS)

Sharma, Dheeraj; Singh, Deepika; Pandey, Sunil; Yadav, Shivendra; Kondekar, P. N.

2017-11-01

In this work, we have done a comprehensive study between full-gate and short-gate dielectrically modulated (DM) electrically doped tunnel field-effect transistor (SGDM-EDTFET) based biosensors of equivalent dimensions. However, in both the structures, dielectric constant and charge density are considered as a sensing parameter for sensing the charged and non-charged biomolecules in the given solution. In SGDM-EDTFET architecture, the reduction in gate length results a significant improvement in the tunneling current due to occurrence of strong coupling between gate and channel region which ensures higher drain current sensitivity for detection of the biomolecules. Moreover, the sensitivity of dual metal SGDM-EDTFET is compared with the single metal SGDM-EDTFET to analyze the better sensing capability of both the devices for the biosensor application. Further, the effect of sensing parameter i.e., ON-current (ION), and ION/IOFF ratio is analysed for dual metal SGDM-EDTFET in comparison with dual metal SGDM-EDFET. From the comparison, it is found that dual metal SGDM-EDTFET based biosensor attains relatively better sensitivity and can be utilized as a suitable candidate for biosensing applications.

Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Nigam, Kaushal; Sharma, Dheeraj; Kondekar, P. N.

2016-06-01

This script features a study of bandgap, gate material work function and gate dielectric engineering for enhancement of DC and Analog/RF performance, reduction in the hot carriers effect (HCEs) and drain induced barrier lowering (DIBL) for better device reliability. In this concern, the use of band gap and gate material work function engineering improves the device performance in terms of the ON-state current and suppressed ambipolar behaviour with maintaining the low OFF-state current. With these advantages, the use of gate material work function engineering imposes restriction on the high frequency performance due to increment in the parasitic capacitances and also introduces the hot carrier effects. Hence, the gate dielectric engineering with bandgap and gate material work function engineering are used in this paper to overcome the cons of the gate material work function engineering by obtaining a superior performance in terms of the current driving capability, ambipolar conduction, HCEs, DIBL and high frequency parameters of the device for ultra-low power applications. Finally, the optimization of length for different work function is performed to get the best out of this.

Effect of surface moisture on dielectric behavior of ultrafine BaTiO3 particulates.

NASA Technical Reports Server (NTRS)

Mountvala, A. J.

1971-01-01

The effects of adsorbed H2O on the dielectric properties of ultrafine BaTiO3 particulates of varying particle size and environmental history were determined. The dielectric behavior depends strongly on surface hydration. No particle size dependence of dielectric constant was found for dehydroxylated surfaces in ultrafine particulate (unsintered) BaTiO3 materials. For equivalent particle sizes, the ac conductivity is sensitive to surface morphology. Reactions with H2O vapor appear to account for the variations in dielectric properties. Surface dehydration was effectively accomplished by washing as-received powders in isopropanol.

Improved dielectric functions in metallic films obtained via template stripping

NASA Astrophysics Data System (ADS)

Hyuk Park, Jong; Nagpal, Prashant; Oh, Sang-Hyun; Norris, David J.

2012-02-01

We compare the dielectric functions of silver interfaces obtained via thermal evaporation with those obtained with template stripping. Ellipsometry measurements show that the smoother template-stripped surfaces exhibit effective dielectric functions with a more negative real component and a smaller imaginary component, implying higher conductivity and less energy loss, respectively. These results agree with the relation between dielectric function and surface roughness derived from combining the effective-medium model and the Drude-Lorentz model. The improvement in the effective dielectric properties shows that metallic films prepared via template stripping can be favorable for applications in electronics, nanophotonics, and plasmonics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fakhri, M.; Theisen, M.; Behrendt, A.

Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al{sub 2}O{sub 3}/ZrO{sub 2} as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices withmore » encapsulation.« less

Tuneable dielectric films having low electrical losses

DOEpatents

Dimos, Duane Brian; Schwartz, Robert William; Raymond, Mark Victor; Al-Shareef, Husam Niman; Mueller, Carl; Galt, David

2000-01-01

The present invention is directed to a method for forming dielectric thin films having substantially reduced electrical losses at microwave and millimeter wave frequencies relative to conventional dielectric thin films. The reduction in losses is realized by dramatically increasing the grain sizes of the dielectric films, thereby minimizing intergranular scattering of the microwave signal due to grain boundaries and point defects. The increase in grain size is realized by heating the film to a temperature at which the grains experience regrowth. The grain size of the films can be further increased by first depositing the films with an excess of one of the compoents, such that a highly mobile grain boundary phase is formed.

Comprehensive analysis of structure and temperature, frequency and concentration-dependent dielectric properties of lithium-substituted cobalt ferrites (Li x Co1- x Fe2O4)

NASA Astrophysics Data System (ADS)

Anjum, Safia; Nisa, Mehru; Sabah, Aneeqa; Rafique, M. S.; Zia, Rehana

2017-08-01

This paper has been dedicated to the synthesis and characterization of a series of lithium-substituted cobalt ferrites Li x Co1- x Fe2O4 ( x = 0, 0.2, 0.4, 0.6, 0.8, 1). These samples have been prepared using simple ball milling machine through powder metallurgy route. The structural analysis is carried out using X-ray diffractometer and their 3D vitalization is simulated using diamond software. The frequency and temperature-dependent dielectric properties of prepared samples have been measured using inductor capacitor resistor (LCR) meter. The structural analysis confirms that all the prepared samples have inverse cubic spinel structure. It is also revealed that the crystallite size and lattice parameter decrease with the increasing concentration of lithium (Li+1) ions, it is due to the smaller ionic radii of lithium ions. The comprehensive analysis of frequency, concentration and temperature-dependent dielectric properties of prepared samples is described in this paper. It is observed that the dielectric constant and tangent loss have decreased and conductivity increased as the frequency increases. It is also revealed that the dielectric constant, tangent loss and AC conductivity increase as the concentration of lithium increases due to its lower electronegativity value. Temperature plays a vital role in enhancing the dielectric constant, tangent loss and AC conductivity because the mobility of ions increases as the temperature increases.

Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

NASA Astrophysics Data System (ADS)

Taşçıoğlu, İ.; Tüzün Özmen, Ö.; Şağban, H. M.; Yağlıoğlu, E.; Altındal, Ş.

2017-04-01

In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by spin coating method. The electrical and dielectric analysis of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky barrier diode was conducted by means of capacitance-voltage ( C- V) and conductance-voltage ( G/ ω- V) measurements in the frequency range of 10 kHz-2 MHz. The C- V- f plots exhibit fairly large frequency dispersion due to excess capacitance caused by the presence of interface states ( N ss). The values of N ss located in semiconductor bandgap at the organic film/semiconductor interface were calculated by Hill-Coleman method. Experimental results show that dielectric constant ( ɛ') and dielectric loss ( ɛ″) decrease with increasing frequency, whereas loss tangent (tan δ) remains nearly the same. The decrease in ɛ' and ɛ″ was interpreted by the theory of dielectric relaxation due to interfacial polarization. It is also observed that ac electrical conductivity ( σ ac) and electric modulus ( M' and M″) increase with increasing frequency.

Dynamics of water in strawberry and red onion as studied by dielectric spectroscopy

NASA Astrophysics Data System (ADS)

Jansson, H.; Huldt, C.; Bergman, R.; Swenson, J.

2005-01-01

We have investigated the microscopic dynamics of strawberry and red onion by means of broadband dielectric spectroscopy. In contrast to most of the previous experiments on carbohydrate-rich biological materials, which have mainly considered the more global dynamics of the “biological matrix,” we are here focusing on the microscopic dynamics of mainly the associated water. The results for both strawberry and red onion show that the imaginary part of the permittivity contains one conductivity term and a clear dielectric loss peak, which was found to be similar to the strongest relaxation process of water in carbohydrate solutions. The temperature dependence of the relaxation process was analyzed for different water content. The relaxation process slows down, and its temperature dependence becomes more non-Arrhenius, with decreasing water content. The reason for this is most likely that, on average, the water molecules interact more strongly with carbohydrates and other biological materials at low water content, and the dynamical properties of this biological matrix changes substantially with increasing temperature (from an almost rigid matrix where the water is basically unable to perform long-range diffusion due to confinement effects, to a dynamic matrix with no static confinement effects), which also changes (i.e., reduces) the activation energy of the relaxation process with increasing temperature (i.e., causes a non-Arrhenius temperature dependence). This further changes the conductivity from mainly polarization effects at low temperatures, due to hindered ionic motions, to long-range diffusivity at T>250K . Thus, around this temperature ions in the carbohydrate solution no longer get stuck in confined cavities, since the motion of the biological matrix “opens up” the cavities and the ions are then able to perform long-range migration.

Nano-scale zirconia and hafnia dielectrics grown by atomic layer deposition: Crystallinity, interface structures and electrical properties

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub

With the continued scaling of transistors, leakage current densities across the SiO2 gate dielectric have increased enormously through direct tunneling. Presently, metal oxides having higher dielectric constants than SiO2 are being investigated to reduce the leakage current by increasing the physical thickness of the dielectric. Many possible techniques exist for depositing high-kappa gate dielectrics. Atomic layer deposition (ALD) has drawn attention as a method for preparing ultrathin metal oxide layers with excellent electrical characteristics and near-perfect film conformality due to the layer-by-layer nature of the deposition mechanism. For this research, an ALD system using ZrCl4/HfCl4 and H2O was built and optimized. The microstructural and electrical properties of ALD-ZrO2 and HfO2 grown on SiO2/Si substrates were investigated and compared using various characterization tools. In particular, the crystallization kinetics of amorphous ALD-HfO2 films were studied using in-situ annealing experiments in a TEM. The effect of crystallization on the electrical properties of ALD-HfO 2 was also investigated using various in-situ and ex-situ post-deposition anneals. Our results revealed that crystallization had little effect on the magnitude of the gate leakage current or on the conduction mechanisms. Building upon the results for each metal oxide separately, more advanced investigations were made. Several nanolaminate structures using ZrO2 and HfO2 with different sequences and layer thicknesses were characterized. The effects of the starting microstructure on the microstructural evolution of nanolaminate stacks were studied. Additionally, a promising new approach for engineering the thickness of the SiO2-based interface layer between the metal oxide and silicon substrate after deposition of the metal oxide layer was suggested. Through experimental measurements and thermodynamic analysis, it is shown that a Ti overlayer, which exhibits a high oxygen solubility, can effectively getter oxygen from the interface layer, thus decomposing SiO2 and reducing the interface layer thickness in a controllable fashion. As one of several possible applications, ALD-ZrO2 and HfO 2 gate dielectric films were deposited on Ge (001) substrates with different surface passivations. After extensive characterization using various microstructural, electrical, and chemical analyses, excellent MOS electrical properties of high-kappa gate dielectrics on Ge were successfully demonstrated with optimized surface nitridation of the Ge substrates.

Calculation of the dielectric properties of semiconductors

NASA Astrophysics Data System (ADS)

Engel, G. E.; Farid, Behnam

1992-12-01

We report on numerical calculations of the dynamical dielectric function in silicon, using a continued-fraction expansion of the polarizability and a recently proposed representation of the inverse dielectric function in terms of plasmonlike excitations. A number of important technical refinements to further improve the computational efficiency of the method are introduced, making the ab initio calculation of the full energy dependence of the dielectric function comparable in cost to calculation of its static value. Physical results include the observation of previously unresolved features in the random-phase approximated dielectric function and its inverse within the framework of density-functional theory in the local-density approximation, which may be accessible to experiment. We discuss the dispersion of plasmon energies in silicon along the Λ and Δ directions and find improved agreement with experiment compared to earlier calculations. We also present quantitative evidence indicating the degree of violation of the Johnson f-sum rule for the dielectric function due to the nonlocality of the one-electron potential used in the underlying band-structure calculations.

Dielectric breakdown strength of magnetic nanofluid based on insulation oil after impulse test

NASA Astrophysics Data System (ADS)

Nazari, M.; Rasoulifard, M. H.; Hosseini, H.

2016-02-01

In this study, the dielectric breakdown strength of magnetic nanofluids based on transformer mineral oil for use in power systems is reviewed. Nano oil samples are obtained from dispersion of the magnetic nanofluid within uninhibited transformer mineral oil NYTRO LIBRA as the base fluid. AC dielectric breakdown voltage measurement was carried out according to IEC 60156 standard and the lightning impulse breakdown voltage was obtained by using the sphere-sphere electrodes in an experimental setup for nano oil in volume concentration of 0.1-0.6%. Results indicate improved AC and lightning impulse breakdown voltage of nano oil compared to the base oil. AC test was performed again after applying impulse current and result showed that nano oil unlike the base oil retains its dielectric properties. Increase the dielectric strength of the nano oil is mainly due to dielectric and magnetic properties of Fe3O4 nanoparticles that act as free electrons snapper, and reduce the rate of free electrons in the ionization process.

Agricultural wastes as a resource of raw materials for developing low-dielectric glass-ceramics

PubMed Central

Danewalia, Satwinder Singh; Sharma, Gaurav; Thakur, Samita; Singh, K.

2016-01-01

Agricultural waste ashes are used as resource materials to synthesize new glass and glass-ceramics. The as-prepared materials are characterized using various techniques for their structural and dielectric properties to check their suitability in microelectronic applications. Sugarcane leaves ash exhibits higher content of alkali metal oxides than rice husk ash, which reduces the melting point of the components due to eutectic reactions. The addition of sugarcane leaves ash in rice husk ash promotes the glass formation. Additionally, it prevents the cristobalite phase formation. These materials are inherently porous, which is responsible for low dielectric permittivity i.e. 9 to 40. The presence of less ordered augite phase enhances the dielectric permittivity as compared to cristobalite and tridymite phases. The present glass-ceramics exhibit lower losses than similar materials synthesized using conventional minerals. The dielectric permittivity is independent to a wide range of temperature and frequency. The glass-ceramics developed with adequately devitrified phases can be used in microelectronic devices and other dielectric applications. PMID:27087123

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahesh, P., E-mail: pamu@iitg.ernet.in; Subhash, T., E-mail: pamu@iitg.ernet.in; Pamu, D., E-mail: pamu@iitg.ernet.in

We report the dielectric properties of (K{sub 0.5}Na{sub 0.5})NbO{sub 3} ceramics doped with x wt% of Dy{sub 2}O{sub 3} (x= 0.0-1.5 wt%) using the broadband dielectric spectroscopy. The X-ray diffraction studies showed the formation of perovskite structure signifying that Dy{sub 2}O{sub 3} diffuse into the KNN lattice. Samples doped with x > 0.5 wt% exhibit smaller grain size and lower relative densities. The dielectric properties of KNN ceramics doped with Dy{sub 2}O{sub 3} are enhanced by increasing the Dy{sup 3+} content; among the compositions studied, x = 0.5 wt% exhibited the highest dielectric constant and lowest loss at 1MHz overmore » the temperature range of 30°C to 400°C. All the samples exhibit maximum dielectric constant at the Curie temperature (∼ 326°C) and a small peak in the dielectric constant at around 165°C is due to a structural phase transition.« less

Method of doping organic semiconductors

DOEpatents

Kloc,; Christian Leo; Ramirez; Arthur Penn; So, Woo-Young

2010-10-26

An apparatus has a crystalline organic semiconducting region that includes polyaromatic molecules. A source electrode and a drain electrode of a field-effect transistor are both in contact with the crystalline organic semiconducting region. A gate electrode of the field-effect transistor is located to affect the conductivity of the crystalline organic semiconducting region between the source and drain electrodes. A dielectric layer of a first dielectric that is substantially impermeable to oxygen is in contact with the crystalline organic semiconducting region. The crystalline organic semiconducting region is located between the dielectric layer and a substrate. The gate electrode is located on the dielectric layer. A portion of the crystalline organic semiconducting region is in contact with a second dielectric via an opening in the dielectric layer. A physical interface is located between the second dielectric and the first dielectric.

Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

S Kim; M Jang; H Yang

2011-12-31

Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, weremore » characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.« less

Electroactive fluorinate-based polymers: Ferroelectric and dielectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu Zhi; Chen Ang; Department of Physics and Department of Chemistry, University of Akron, Akron, Ohio 44325

2004-12-15

The dielectric, ferroelectric, and electroactive strain behavior of poly(vinylidene fluoride-trifluoroethylene) copolymers and poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) terpolymers is studied in a wide temperature and frequency range. The dielectric response from two dielectric polarization processes, modes A(A{sup '}) and B, and the dielectric-background contribution can be identified for these polymers by using the Cole-Cole plot method. Therefore physically reasonable parameters are obtained by fitting the relaxation time to the Vogel-Fulcher relation. On the other hand, the dielectric relaxation step and high strain decrease simultaneously with decreasing temperature; this indicates that the dielectric relaxation process and high strain behavior are strongly correlated. The electron-irradiationmore » effect in copolymers and the monomer effect in terpolymers are discussed.« less

The effects of PbZn1/3Nb2/3O3-doping on structural, thermal, optical, dielectric, and ferroelectric properties of BaTiO3 ceramics

NASA Astrophysics Data System (ADS)

Suchanicz, J.; Świerczek, K.; Sitko, D.; Czaja, P.; Marchet, P.; Czternastek, H.; Majda, D.

2017-09-01

Low-lead (1-x)BT-xPZN (x = 0, 0.025, 0.05, 0.075, 0.10, 0.125, and 0.15) ceramics were successfully synthesized by the spark-plasma-sintering method for the first time. Their phase transition behavior as well as structural, thermal, optical, and electrical properties was investigated. These materials exhibit the structure of perovskite-type solid solutions and undergo a sequence of phase transitions, typical of pure BaTiO3 (BT). The dielectric test results revealed that with the increase in the PbZn1/3Nb2/3O3 (PZN) content, the frequency dispersion of electric permittivity increases, whilst the dielectric/ferroelectric properties tend to deteriorate, which is characteristic of relaxor-type behavior. Therefore, it is reasonable to suppose that these ceramics progressively lack long-range ordering. These effects are due to the competition between lone-pair electrons' induced changes in the A-O band upon Pb2+ addition and ionic size differences. In general, the transition temperatures observed by dielectric analyses are in good agreement with those obtained from X-ray diffraction and differential scanning calorimetry measurements. The BT-PZN system may help to understand why relaxor behavior appears in perovskite-based materials. It appears that these materials can become a good starting point for the development of new low-lead electronic ceramics.

Effect of Thermochemical Synthetic Conditions on the Structure and Dielectric Properties of Ga1.9Fe0.1O3 Compounds.

PubMed

Roy, Swadipta; Ramana, C V

2018-02-05

We report on the tunable and controlled dielectric properties of iron (Fe)-doped gallium oxide (Ga 2 O 3 ; Ga 1.9 Fe 0.1 O 3 , referred to as GFO) inorganic compounds. The GFO materials were synthesized using a standard high-temperature, solid-state chemical reaction method by varying the thermochemical processing conditions, namely, different calcination and sintering environments. Structural characterization by X-ray diffraction revealed that GFO compounds crystallize in the β-Ga 2 O 3 phase. The Fe doping has induced slight lattice strain in GFO, which is evident in structural analysis. The effect of the sintering temperature (T sint ), which was varied in the range of 900-1200 °C, is significant, as revealed by electron microscopy analysis. T sint influences the grain size and microstructure evolution, which, in turn, influences the dielectric and electrical properties of GFO compounds. The energy-dispersive X-ray spectrometry and mapping data demonstrate the uniform distribution of the elemental composition over the microstructure. The temperature- and frequency-dependent dielectric measurements indicate the characteristic features that are specifically due to Fe doping in Ga 2 O 3 . The spreading factor and relaxation time, calculated using Cole-Cole plots, are in the ranges of 0.65-0.76 and 10 -4 s, respectively. The results demonstrate that densification and control over the microstructure and properties of GFO can be achieved by optimizing T sint .

Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films

NASA Astrophysics Data System (ADS)

Jain, Pushkar; Juneja, Jasbir S.; Bhagwat, Vinay; Rymaszewski, Eugene J.; Lu, Toh-Ming; Cale, Timothy S.

2005-05-01

The effects of substrate heating on the stoichiometry and the electrical properties of pulsed dc reactively sputtered tantalum oxide films over a range of film thickness (0.14 to 5.4 μm) are discussed. The film stoichiometry, and hence the electrical properties, of tantalum oxide films; e.g., breakdown field, leakage current density, dielectric constant, and dielectric loss are compared for two different cases: (a) when no intentional substrate/film cooling is provided, and (b) when the substrate is water cooled during deposition. All other operating conditions are the same, and the film thickness is directly related to deposition time. The tantalum oxide films deposited on the water-cooled substrates are stoichiometric, and exhibit excellent electrical properties over the entire range of film thickness. ``Noncooled'' tantalum oxide films are stoichiometric up to ~1 μm film thickness, beyond that the deposited oxide is increasingly nonstoichiometric. The presence of partially oxidized Ta in thicker (>~1 μm) noncooled tantalum oxide films causes a lower breakdown field, higher leakage current density, higher apparent dielectric constant, and dielectric loss. The growth of nonstoichiometric tantalum oxide in thicker noncooled films is attributed to decreased surface oxygen concentration due to oxygen recombination and desorption at higher film temperatures (>~100 °C). The quantitative results presented reflect experience with a specific piece of equipment; however, the procedures presented can be used to characterize deposition processes in which film stoichiometry can change.

Enhancing breakdown strength and energy storage performance of PVDF-based nanocomposites by adding exfoliated boron nitride

NASA Astrophysics Data System (ADS)

Xie, Yunchuan; Wang, Jian; Yu, Yangyang; Jiang, Wanrong; Zhang, Zhicheng

2018-05-01

Polymer/ceramic nanocomposites are promising dielectrics for high energy storage density (Ue) capacitors. However, their low breakdown strength (Eb) and high dielectric loss due to heterogeneous structure seriously limit their applications under high electric field. In this work, boron nitride nano-sheets (BNNS) exfoliated from BN particles were introduced into PVDF-based BaTiO3 (mBT) binary composites to reduce the dielectric loss and promote the Ue. The effects of BNNS on the dielectric properties, especially breakdown resistance, and energy storage performance of the resultant composites were carefully investigated by comparing with the composites without BNNS. The introduction of BNNS could significantly improve Eb and Ue of the final composites. Ternary composite with particle contents of 6 wt% BNNS and 5 wt% mBT presented a Eb of about 400 MV/m and Ue of 5.2 J/cm3, which is 40% and 30% superior to that of the binary composite with 5 wt% mBT, respectively. That may be attributed to the 2D structure, high bulk electrical resistivity, and fine dispersion in PVDF of BNNS, which is acting as an efficient insulating barrier against the leakage current and charges conduction. The depression effect of BNNS onto the charge mobility and the interfacial polarization of the polymer composites is finely addressed, which may offer a promising strategy for the fabrication of high-k polymer composites with low loss.

Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, H.; Shohet, J. L.; Ryan, E. T.

2014-11-17

Vacuum ultraviolet (VUV) irradiation is generated during plasma processing in semiconductor fabrications, while the effect of VUV irradiation on the dielectric constant (k value) of low-k materials is still an open question. To clarify this problem, VUV photons with a range of energies were exposed on low-k organosilicate dielectrics (SiCOH) samples at room temperature. Photon energies equal to or larger than 6.0 eV were found to decrease the k value of SiCOH films. VUV photons with lower energies do not have this effect. This shows the need for thermal heating in traditional ultraviolet (UV) curing since UV light sources do notmore » have sufficient energy to change the dielectric constant of SiCOH and additional energy is required from thermal heating. In addition, 6.2 eV photon irradiation was found to be the most effective in decreasing the dielectric constant of low-k organosilicate films. Fourier Transform Infra-red Spectroscopy shows that these 6.2 eV VUV exposures removed organic porogens. This contributes to the decrease of the dielectric constant. This information provides the range of VUV photon energies that could decrease the dielectric constant of low-k materials most effectively.« less

An efficient use of mixing model for computing the effective dielectric and thermal properties of the human head.

PubMed

Mishra, Varsha; Puthucheri, Smitha; Singh, Dharmendra

2018-05-07

As a preventive measure against the electromagnetic (EM) wave exposure to human body, EM radiation regulatory authorities such as ICNIRP and FCC defined the value of specific absorption rate (SAR) for the human head during EM wave exposure from mobile phone. SAR quantifies the absorption of EM waves in the human body and it mainly depends on the dielectric properties (ε', σ) of the corresponding tissues. The head part of the human body is more susceptible to EM wave exposure due to the usage of mobile phones. The human head is a complex structure made up of multiple tissues with intermixing of many layers; thus, the accurate measurement of permittivity (ε') and conductivity (σ) of the tissues of the human head is still a challenge. For computing the SAR, researchers are using multilayer model, which has some challenges for defining the boundary for layers. Therefore, in this paper, an attempt has been made to propose a method to compute effective complex permittivity of the human head in the range of 0.3 to 3.0 GHz by applying De-Loor mixing model. Similarly, for defining the thermal effect in the tissue, thermal properties of the human head have also been computed using the De-Loor mixing method. The effective dielectric and thermal properties of equivalent human head model are compared with the IEEE Std. 1528. Graphical abstract ᅟ.

Effect of dielectric layers on device stability of pentacene-based field-effect transistors.

PubMed

Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben

2009-09-07

We report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.

Robust nanogenerators based on graft copolymers via control of dielectrics for remarkable output power enhancement

PubMed Central

Lee, Jae Won; Cho, Hye Jin; Chun, Jinsung; Kim, Kyeong Nam; Kim, Seongsu; Ahn, Chang Won; Kim, Ill Won; Kim, Ju-Young; Kim, Sang-Woo; Yang, Changduk; Baik, Jeong Min

2017-01-01

A robust nanogenerator based on poly(tert-butyl acrylate) (PtBA)–grafted polyvinylidene difluoride (PVDF) copolymers via dielectric constant control through an atom-transfer radical polymerization technique, which can markedly increase the output power, is demonstrated. The copolymer is mainly composed of α phases with enhanced dipole moments due to the π-bonding and polar characteristics of the ester functional groups in the PtBA, resulting in the increase of dielectric constant values by approximately twice, supported by Kelvin probe force microscopy measurements. This increase in the dielectric constant significantly increased the density of the charges that can be accumulated on the copolymer during physical contact. The nanogenerator generates output signals of 105 V and 25 μA/cm2, a 20-fold enhancement in output power, compared to pristine PVDF–based nanogenerator after tuning the surface potential using a poling method. The markedly enhanced output performance is quite stable and reliable in harsh mechanical environments due to the high flexibility of the films. On the basis of these results, a much faster charging characteristic is demonstrated in this study. PMID:28560339

Dielectric properties of Ba0.6Sr0.4TiO3 thin films deposited by mist plasma evaporation using aqueous solution precursor

NASA Astrophysics Data System (ADS)

Huang, Hui; Shi, Peng; Wang, Minqiang; Yao, Xi; Tan, O. K.

2006-06-01

Mist plasma evaporation (MPE) technique has been developed to deposit Ba0.6Sr0.4TiO3 (BST) thin films on SiO2/Si and Pt/Ti/SiO2/Si substrates at atmospheric pressure using metal nitrate aqueous solution as precursor. MPE is characterized by the injection of liquid reactants into thermal plasma where the source materials in the droplets are evaporated by the high temperature of the thermal plasma. Nanometer-scale clusters are formed in the tail flame of the plasma, and then deposited and rearranged on the substrate at a lower temperature. Due to the high temperature annealing process of the thermal plasma before deposition, well-crystallized BST films were deposited at substrate temperature of 630 °C. The dielectric constant and dielectric loss of the film at 100 kHz are 715 and 0.24, respectively. Due to the good crystallinity of the BST films deposited by MPE, high dielectric tunability up to 39.3% is achieved at low applied electric field of 100 kV cm-1.

Conductivity, dielectric and modulus study of chitosan-methyl cellulose - BMIMTFSI polymer electrolyte doped with cellulose nano crystal

NASA Astrophysics Data System (ADS)

Misenan, Muhammad Syukri Mohamad; Ali, Ernie Suzana; Khiar, Azwani Sofia Ahmad

2018-06-01

In this study, the effect of adding cellulose nanocrystal (CNC) on the conductivity of biopolymer electrolyte (BPE) based on chitosan-methylcellulose-BMIMTFSI has been studied. The samples were prepared via solution casting technique. The film was characterized by impedance spectroscopy HIOKI 3531- 01 LCR Hi-Tester to measure its ionic conductivity at room temperatures over a wide range of frequency between 50Hz-5MHz. Sample with 15 wt% of CNC shows the highest conductivity of 4.82 x 10-6 Scm-1 at room temperature. Dielectric and modulus studies were carried out to further understands the conductivity behavior of the samples. The increase in conductivity is mainly due to the increase in number of charge carriers.

Effect of a Dielectric Overlay on a Linearly Tapered Slot Antenna Excited by a Coplanar Waveguide

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Lee, Richard Q.; Perl, Thomas D.; Silvestro, John

1993-01-01

The effect of a dielectric overlay on a linearly tapered slot antenna (LTSA) is studied. The LTSA under study has very wide bandwidth and excellent radiation patterns. A dielectric overlay improves the patterns and directivity of the antenna by increasing the electrical length and effective aperture of the antenna. A dielectric overlay can also be used to reduce the physical length of the antenna without compromising the pattern quality.

Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6

NASA Astrophysics Data System (ADS)

Filippi, M.; Kundys, B.; Ranjith, R.; Kundu, Asish K.; Prellier, W.

2008-05-01

Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity is often measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution can then be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.

Grain size effect on the giant dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} nanoceramics prepared by mechanosynthesis and spark plasma sintering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmad, Mohamad M., E-mail: mmohamad@kfu.edu.sa; Department of Physics, Faculty of Science, Assiut University in the New Valley, El-Kharga 72511; Yamada, Koji

2014-04-21

In the present work, CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) nanoceramics with different grain sizes were prepared by spark plasma sintering (SPS) at different temperatures (SPS-800, SPS-900, SPS-975, and SPS-1050) of the mechanosynthesized nano-powder. Structural and microstructural properties were studied by XRD and field-emission scanning electron microscope measurements. The grain size of CCTO nanoceramics increases from 80 nm to ∼200 nm for the ceramics sintered at 800 °C and 975 °C, respectively. Further increase of SPS temperature to 1050 °C leads to micro-sized ceramics of 2–3 μm. The electrical and dielectric properties of the investigated ceramics were studied by impedance spectroscopy. Giant dielectric constant was observed inmore » CCTO nanoceramics. The dielectric constant increases with increasing the grain size of the nanoceramics with values of 8.3 × 10{sup 3}, 2.4 × 10{sup 4}, and 3.2 × 10{sup 4} for SPS-800, SPS-900, and SPS-975, respectively. For the micro-sized SPS-1050 ceramics, the dielectric constant dropped to 2.14 × 10{sup 4}. The dielectric behavior is interpreted within the internal barrier layer capacitance picture due to the electrical inhomogeneity of the ceramics. Besides the resistive grain boundaries that are usually observed in CCTO ceramics, domain boundaries appear as a second source of internal layers in the current nanoceramics.« less

Exceptional points of resonant states on a periodic slab

NASA Astrophysics Data System (ADS)

Abdrabou, Amgad; Lu, Ya Yan

2018-06-01

A special kind of degeneracy, known as exceptional points (EPs), for resonant states on a dielectric periodic slab are investigated. Due to their unique properties, EPs have found important applications in lasing, sensing, unidirectional operations, etc. In general, EPs may appear in non-Hermitian eigenvalue problems, including those related to -parity-time-symmetric systems and those for open dielectric structures (due to the existence of radiation loss). In this paper, we study EPs on a simple periodic structure: a slab with a periodic array of gaps. By using an efficient numerical method, we calculate the EPs and study their dependence on geometric parameters. Analytic results are obtained for the limit as the periodic slab approaches a uniform one. Our work provides a simple platform for further studies concerning EPs on dielectric periodic structures, their unusual properties, and applications.

Space charge characteristics of fluorinated polyethylene: Different effects of fluorine and oxygen

NASA Astrophysics Data System (ADS)

Zhao, Ni; Nie, Yongjie; Li, Shengtao

2018-04-01

Direct fluorination are proved having obvious effect on space charge characteristics of polyethylene. It is believed that fluorine has a positive effect on suppressing space charge injection while oxygen impurity has a negative effect. However, the mechanism for the opposite effect of fluorine and oxygen is still not clear. In this paper, the different effects of fluorine and oxygen on space charge characteristics of fluorinated low density polyethylene (LDPE) are investigated on the basis of dielectric property, chemical constitutes and trap performance of surface fluorinated layers. The results show that direct fluorination has obvious effect on chemical constitutes and dielectric properties of surface fluorinated layer. Introduced fluorine is the main factor for suppressing charge injection from the electrodes, because it seriously changes the chemical constitutes and further the trap properties of the surface fluorinated layer. While introduction of oxygen results in heterocharges and makes space charge distribution complex, due to the ionization of generated small groups like C=O containing groups. Moreover, direct fluorination will result in cleavage of some LDPE molecules whatever there is oxygen impurity or not.

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

PubMed Central

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

2018-01-01

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

Highly Efficient, All-Dielectric Huygens Metasurfaces

NASA Astrophysics Data System (ADS)

Ollanik, Adam; Farrar-Foley, Nick; Smith, Jake; Escarra, Matthew

Demonstration of the control of light by the introduction of abrupt phase discontinuities across a subwavelength scale has opened the doors to a new level of wavefront control. All-dielectric Huygens metasurfaces hold significant promise due to their dramatically improved efficiency over plasmonic approaches. We present the successful design, computational modeling, and experimental realization of all-dielectric transmissive Huygens metasurfaces capable of deflection efficiency >90%. Dielectric Huygens sources, taking advantage of spectrally aligned electric and magnetic dipole resonances, are capable of tunable phase delay for transmitted light with near unity efficiency of forward scattering. Using ellipsoidal cylinder nanoantennas, we are able to manipulate the phase response and engineer a metasurface with a spatially gradient phase profile. Through careful design and optimization we mitigate the effects of inter-antenna coupling. We have designed and modeled metasurfaces demonstrating anomalous refraction with very high efficiency (>80%) for wavelength bands from the UV to the near-IR. These surfaces were designed using three distinct nanoantenna materials, Si, TiO2, and GaP, to demonstrate the flexibility of the technique. Experimentally, Si nanoantennas are fabricated using a combination of electron beam lithography and ICP/RIE-etching. Metasurfaces are characterized using a goniospectrometer capable of mapping light intensity on a cylindrical shell surrounding the metasurface.

Electrical and dielectric properties of Na1/2La1/2Cu3Ti4O12 ceramics prepared by high energy ball-milling and conventional sintering

NASA Astrophysics Data System (ADS)

Mahfoz Kotb, H.; Ahmad, Mohamad M.

2016-12-01

We report on the measurements of the electrical and dielectric properties of Na1/2La1/2Cu3Ti4O12 (NLCTO) ceramics prepared by high energy ball-milling and conventional sintering without any calcination steps. The x-ray powder diffraction analysis shows that pure perovskite-like CCTO phase is obtained after sintering at 1025 °C-1075 °C. Higher sintering temperatures result in multi-phase ceramics due to thermal decomposition. Scanning electron microscope observations reveal that the grain size is in a range of ˜3 μm-5μm for these ceramics. Impedance spectroscopy measurements performed in a wide frequency range (1 Hz-10 MHz) and at various temperatures (120 K-470 K) are used to study the dielectric and electrical properties of NLCTO ceramics. A good compromise between high ɛ‧ (5.7 × 103 and 4.1 × 103 at 1.1 kHz and 96 kHz, respectively) and low tan δ (0.161 and 0.126 at 1.1 kHz and 96 kHz, respectively) is obtained for the ceramic sintered at 1050 °C. The observed high dielectric constant behavior is explained in terms of the internal barrier layer capacitance effect.

Effect of annealing temperatures on the electrical conductivity and dielectric properties of Ni1.5Fe1.5O4 spinel ferrite prepared by chemical reaction at different pH values

NASA Astrophysics Data System (ADS)

Aneesh Kumar, K. S.; Bhowmik, R. N.

2017-12-01

The electrical conductivity and dielectric properties of Ni1.5Fe1.5O4 ferrite has been controlled by varying the annealing temperature of the chemical routed samples. The frequency activated conductivity obeyed Jonscher’s power law and universal scaling suggested semiconductor nature. An unusual metal like state has been revealed in the measurement temperature scale in between two semiconductor states with different activation energy. The metal like state has been affected by thermal annealing of the material. The analysis of electrical impedance and modulus spectra has confirmed non-Debye dielectric relaxation with contributions from grains and grain boundaries. The dielectric relaxation process is thermally activated in terms of measurement temperature and annealing temperature of the samples. The hole hopping process, due to presence of Ni3+ ions in the present Ni rich ferrite, played a significant role in determining the thermal activated conduction mechanism. This work has successfully applied the technique of a combined variation of annealing temperature and pH value during chemical reaction for tuning electrical parameters in a wide range; for example dc limit of conductivity ~10-4-10-12 S cm-1, and unusually high activation energy ~0.17-1.36 eV.

Changes in the dielectric properties of rat tissue as a function of age at microwave frequencies

NASA Astrophysics Data System (ADS)

Peyman, A.; Rezazadeh, A. A.; Gabriel, C.

2001-06-01

The dielectric properties of ten rat tissues at six different ages were measured at 37 °C in the frequency range of 130 MHz to 10 GHz using an open-ended coaxial probe and a computer controlled network analyser. The results show a general decrease of the dielectric properties with age. The trend is more apparent for brain, skull and skin tissues and less noticeable for abdominal tissues. The variation in the dielectric properties with age is due to the changes in the water content and the organic composition of tissues. The percentage decrease in the dielectric properties of certain tissues in the 30 to 70 day old rats at cellular phone frequencies have been tabulated. These data provide an important input in the provision of rigorous dosimetry in lifetime-exposure animal experiments. The results provide some insight into possible differences in the assessment of exposure for children and adults.

Effect of illumination on the dielectrical properties of P3HT:PC70BM nanocomposites

NASA Astrophysics Data System (ADS)

Hamza, Saidi; Mhamdi, Asya; Aloui, Walid; Bouazizi, Abdelaziz; Khirouni, Kamel

2017-05-01

In this work, the effects of light-generated carriers on the dielectric properties of the structure ITO/PEDOT: PSS/P3HT:PC70BM/Al were carried out. Impedance spectroscopy was performed at an applied bias equal to the open-circuit. From the real and imaginary part of the impedance, a dipolar relaxation type was observed, which decreased in the presence of light due to an increase in the electron mobility. The Cole-Cole diagram fit using a parallel model R-CPE equivalent circuit leads to the comparison of parallel resistances (R p) and capacitance (CPE) in dark and under illumination. The decrease of R p is related to the increases in the photo-generated charge carrier density. The increase in the capacitance is related to the enhancement of the P3HT/PCBM interface homogeneity.

Dependence of electrical and time stress in organic field effect transistor with low temperature forming gas treated Al2O3 gate dielectrics.

PubMed

Lee, Sunwoo; Chung, Keum Jee; Park, In-Sung; Ahn, Jinho

2009-12-01

We report the characteristics of the organic field effect transistor (OFET) after electrical and time stress. Aluminum oxide (Al2O3) was used as a gate dielectric layer. The surface of the gate oxide layer was treated with hydrogen (H2) and nitrogen (N2) mixed gas to minimize the dangling bond at the interface layer of gate oxide. According to the two stress parameters of electrical and time stress, threshold voltage shift was observed. In particular, the mobility and subthreshold swing of OFET were significantly decreased due to hole carrier localization and degradation of the channel layer between gate oxide and pentacene by electrical stress. Electrical stress is a more critical factor in the degradation of mobility than time stress caused by H2O and O2 in the air.

Oxygen Passivation Mediated Tunability of Trion and Excitons in MoS2

NASA Astrophysics Data System (ADS)

Gogoi, Pranjal Kumar; Hu, Zhenliang; Wang, Qixing; Carvalho, Alexandra; Schmidt, Daniel; Yin, Xinmao; Chang, Yung-Huang; Li, Lain-Jong; Sow, Chorng Haur; Neto, A. H. Castro; Breese, Mark B. H.; Rusydi, Andrivo; Wee, Andrew T. S.

2017-08-01

Using wide spectral range in situ spectroscopic ellipsometry with systematic ultrahigh vacuum annealing and in situ exposure to oxygen, we report the complex dielectric function of MoS2 isolating the environmental effects and revealing the crucial role of unpassivated and passivated sulphur vacancies. The spectral weights of the A (1.92 eV) and B (2.02 eV) exciton peaks in the dielectric function reduce significantly upon annealing, accompanied by spectral weight transfer in a broad energy range. Interestingly, the original spectral weights are recovered upon controlled oxygen exposure. This tunability of the excitonic effects is likely due to passivation and reemergence of the gap states in the band structure during oxygen adsorption and desorption, respectively, as indicated by ab initio density functional theory calculation results. This Letter unravels and emphasizes the important role of adsorbed oxygen in the optical spectra and many-body interactions of MoS2 .

Effect of gate bias sweep rate on the threshold voltage of in-plane gate nanowire transistor

NASA Astrophysics Data System (ADS)

Liu, H. X.; Li, J.; Tan, R. R.

2018-01-01

In2O3 nanowire electric-double-layer (EDL) transistors with in-plane gate gated by SiO2 solid-electrolyte are fabricated on transparent glass substrates. The gate voltage sweep rates can effectively modulate the threshold voltage (Vth) of nanowire device. Both depletion mode and enhancement mode are realized, and the Vth shift of the nanowire transistors is estimated to be 0.73V (without light). This phenomenon is due to increased adsorption of oxygen on the nanowire surface by the slower gate voltage sweep rates. Adsorbed oxygens capture electrons and cause a surface of nanowire channel was depleted. The operation voltage of transistor was 1.0 V, because the EDL gate dielectric can lead to high gate dielectric capacitance. These transparent in-plane gate nanowire transistors are promising for “see-through” nanoscale sensors.

An Al2O3 Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials

PubMed Central

Zheng, Xiaoming; Wang, Guang; Tan, Yuan; Zhang, Xueao

2017-01-01

We fabricated 70 nm Al2O3 gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al2O3/Si substrate is superior to that on a traditional 300 nm SiO2/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al2O3/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS2, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices. PMID:28937619

Low voltage electrowetting lenticular lens by using multilayer dielectric structure

NASA Astrophysics Data System (ADS)

Lee, Junsik; Kim, Junoh; Kim, Cheoljoong; Shin, Dooseub; Koo, Gyohyun; Sim, Jee Hoon; Won, Yong Hyub

2017-02-01

Lenticular type multi-view display is one of the most popular ways for implementing three dimensional display. This method has a simple structure and exhibits a high luminance. However, fabricating the lenticular lens is difficult because it requires optically complex calculations. 2D-3D conversion is also impossible due to the fixed shape of the lenticular lens. Electrowetting based liquid lenticular lens has a simple fabrication process compared to the solid lenticular lens and the focal length of the liquid lenticular lens can be changed by applying the voltage. 3D and 2D images can be observed with a convex and a flat lens state respectively. Despite these advantages, the electrowetting based liquid lenticular lens demands high driving voltage and low breakdown voltage with a single dielectric layer structure. A certain degree of thickness of the dielectric layer is essential for a uniform operation and a low degradation over time. This paper presents multilayer dielectric structure which results in low driving voltage and the enhanced dielectric breakdown. Aluminum oxide (Al2O3), silicon oxide (SiO2) and parylene C were selected as the multilayer insulators. The total thickness of the dielectric layer of all samples was the same. This method using the multilayer dielectric structure can achieve the lower operating voltage than when using the single dielectric layer. We compared the liquid lenticular lens with three kinds of the multilayer dielectric structure to one with the parylene C single dielectric layer in regard to operational characteristics such as the driving voltage and the dielectric breakdown.

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; VanKeuls, Fred W.; Subramanyam, Guru; Mueller, Carl H.; Romanofsky, Robert R.; Rosado, Gerardo

2000-01-01

The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.

SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

NASA Astrophysics Data System (ADS)

Yongliang, Li; Qiuxia, Xu

2009-12-01

Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

Charge renormalization and inversion of a highly charged lipid bilayer: effects of dielectric discontinuities and charge correlations.

PubMed

Taheri-Araghi, Sattar; Ha, Bae-Yeun

2005-08-01

We reexamine the problem of charge renormalization and inversion of a highly charged surface of a low dielectric constant immersed in ionic solutions. To be specific, we consider an asymmetrically charged lipid bilayer, in which only one layer is negatively charged. In particular, we study how dielectric discontinuities and charge correlations (among lipid charges and condensed counterions) influence the effective charge of the surface. When counterions are monovalent (e.g., Na+), our mean-field approach implies that dielectric discontinuities can enhance counterion condensation. A simple scaling picture shows how the effects of dielectric discontinuities and surface-charge distributions are intertwined: Dielectric discontinuities diminish condensation if the backbone charge is uniformly smeared out while counterions are localized in space; they can, however, enhance condensation when the backbone charge is discrete. In the presence of asymmetric salts such as CaCl2 , we find that the correlation effect, treated at the Gaussian level, is more pronounced when the surface has a lower dielectric constant, inverting the sign of the charge at a smaller value of Ca2+ concentration.

Preparation and Electrical Properties of La0.9Sr0.1TiO3+δ

PubMed Central

Li, Wenzhi; Ma, Zhuang; Gao, Lihong; Wang, Fuchi

2015-01-01

La1−xSrxTiO3+δ (LST) has been studied in many fields, especially in the field of microelectronics due to its excellent electrical performance. Our previous theoretical simulated work has suggested that LST has good dielectric properties, but there are rare reports about this, especially experimental reports. In this paper, LST was prepared using a solid-state reaction method. The X-rays diffraction (XRD), scanning electron microscope (SEM), broadband dielectric spectroscopy, impedance spectroscopy and photoconductive measurement were used to characterize the sample. The results show that the values of dielectric parameters (the relative dielectric constant εr and dielectric loss tanδ), dependent on temperature, are stable under 350 °C and the value of the relative dielectric constant and dielectric loss are about 52–88 and 6.5 × 10−3, respectively. Its value of conductivity increases with rise in temperature, which suggests its negative temperature coefficient of the resistance. In addition, the band gap of LST is about 3.39 eV, so it belongs to a kind of wide-band-gap semiconductor materials. All these indicate that LST has anti-interference ability and good dielectric properties. It could have potential applications as an electronic material. PMID:28787995

Calculation of longitudinal and transverse wake-field effects in dielectric structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gai, W.

1989-01-01

The electro-magnetic radiation of a charged particle passing through a dielectric structure has many applications to accelerator physics. Recently a new acceleration scheme, called the dielectric wake field accelerator, has been proposed. It also can be used as a pick up system for a storage ring because of its slow wave characteristics. In order to study these effects in detail, in this paper we will calculate the wake field effects produced in a dielectric structure by a charged particle. 8 refs., 2 figs.

Influence of the local structure in phase-change materials on their dielectric permittivity.

PubMed

Shportko, Kostiantyn V; Venger, Eugen F

2015-01-01

Ge-Sb-Te alloys, which belong to the phase-change materials, are promising materials for data storage and display and data visualization applications due to their unique properties. This includes a remarkable difference of their electrical and optical properties in the amorphous and crystalline state. Pronounced change of optical properties for Ge-Sb-Te alloys is linked to the different bonding types and different atomic arrangements in amorphous and crystalline states. The dielectric function of phase-change materials has been investigated in the far infrared (FIR) range. Phonons have been detected by FTIR spectroscopy. Difference of the dispersion of the dielectric permittivity of amorphous and crystalline samples is caused by different structures in different states which contribute to the dielectric permittivity.

Dielectric barrier discharge plasma actuator for flow control

NASA Astrophysics Data System (ADS)

Opaits, Dmitry Florievich

Electrohydrodynamic (EHD) and magnetohydrodynamic phenomena are being widely studied for aerodynamic applications. The major effects of these phenomena are heating of the gas, body force generation, and enthalpy addition or extraction, [1, 2, 3]. In particular, asymmetric dielectric barrier discharge (DBD) plasma actuators are known to be effective EHD device in aerodynamic control, [4, 5]. Experiments have demonstrated their effectiveness in separation control, acoustic noise reduction, and other aeronautic applications. In contrast to conventional DBD actuators driven by sinusoidal voltages, we proposed and used a voltage profile consisting of nanosecond pulses superimposed on dc bias voltage. This produces what is essentially a non-self-sustained discharge: the plasma is generated by repetitive short pulses, and the pushing of the gas occurs primarily due to the bias voltage. The advantage of this non-self-sustained discharge is that the parameters of ionizing pulses and the driving bias voltage can be varied independently, which adds flexibility to control and optimization of the actuators performance. Experimental studies were conducted of a flow induced in a quiescent room air by a single DBD actuator. A new approach for non-intrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the Schlieren technique, burst mode of plasma actuator operation, and 2-D numerical fluid modeling. During the experiments, it was found that DBD performance is severely limited by surface charge accumulation on the dielectric. Several ways to mitigate the surface charge were found: using a reversing DC bias potential, three-electrode configuration, slightly conductive dielectrics, and semi conductive coatings. Force balance measurements proved the effectiveness of the suggested configurations and advantages of the new voltage profile (pulses+bias) over the traditional sinusoidal one at relatively low voltages. In view of practical applications certain questions have been also addressed, such as electrodynamic effects which accompany scaling of the actuators to real size models, and environmental effects of ozone production by the plasma actuators.

Optically controlled dielectric properties of single-walled carbon nanotubes for terahertz wave applications.

PubMed

Smirnov, Serguei; Anoshkin, Ilya V; Demchenko, Petr; Gomon, Daniel; Lioubtchenko, Dmitri V; Khodzitsky, Mikhail; Oberhammer, Joachim

2018-06-21

Materials with tunable dielectric properties are valuable for a wide range of electronic devices, but are often lossy at terahertz frequencies. Here we experimentally report the tuning of the dielectric properties of single-walled carbon nanotubes under light illumination. The effect is demonstrated by measurements of impedance variations at low frequency as well as complex dielectric constant variations in the wide frequency range of 0.1-1 THz by time domain spectroscopy. We show that the dielectric constant is significantly modified for varying light intensities. The effect is also practically applied to phase shifters based on dielectric rod waveguides, loaded with carbon nanotube layers. The carbon nanotubes are used as tunable impedance surface controlled by light illumination, in the frequency range of 75-500 GHz. These results suggest that the effect of dielectric constant tuning with light, accompanied by low transmission losses of the carbon nanotube layer in such an ultra-wide band, may open up new directions for the design and fabrication of novel Terahertz and optoelectronic devices.

Strongly nonlinear composite dielectrics: A perturbation method for finding the potential field and bulk effective properties

NASA Astrophysics Data System (ADS)

Blumenfeld, Raphael; Bergman, David J.

1991-10-01

A class of strongly nonlinear composite dielectrics is studied. We develop a general method to reduce the scalar-potential-field problem to the solution of a set of linear Poisson-type equations in rescaled coordinates. The method is applicable for a large variety of nonlinear materials. For a power-law relation between the displacement and the electric fields, it is used to solve explicitly for the value of the bulk effective dielectric constant ɛe to second order in the fluctuations of its local value. A simlar procedure for the vector potential, whose curl is the displacement field, yields a quantity analogous to the inverse dielectric constant in linear dielectrics. The bulk effective dielectric constant is given by a set of linear integral expressions in the rescaled coordinates and exact bounds for it are derived.

Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

NASA Astrophysics Data System (ADS)

Yoon, Myung-Han

Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on six different bilayer dielectrics consisting of various spin-coated polymers/HMDS on 300 nm SiO2/p+-Si, followed by transistor fabrication. In case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters while film morphologies and microstructures remain unchanged. In contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by dielectric surface modifications. The origin of the mobility sensitivity to the various surface chemistries in the case of air sensitive n-type semiconductors is found to be due to electron trapping by silanol and carbonyl functionalities at the semiconductor-dielectric interface.

Low-voltage Organic Thin Film Transistors (OTFTs) with Solution-processed High-k Dielectric cum Interface Engineering

NASA Astrophysics Data System (ADS)

Su, Yaorong

Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs), the high operation voltage resulting from the low gate areal capacitance of traditional SiO 2 remains a severe limitation that hinders OTFTs' development in practical applications. In this regard, developing new materials with high- k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. In this thesis, we first describe a simple solution-based method to fabricate a high-k bilayer Al2Oy/TiOx (ATO) dielectric system at low temperature. Then the dielectric properties of the ATO are characterized and discussed in detail. Furthermore, by employing the high-k ATO as gate dielectric, low-voltage copper phthalocyanine (CuPc) based OTFTs are successfully developed. Interestingly, the obtained low-voltage CuPc TFT exhibits outstanding electrical performance, which is even higher than the device fabricated on traditional low-k SiO2. The above results seem to be contradictory to the reported results due to the fact that high-k usually shows adverse effect on the device performance. This abnormal phenomenon is then studied in detail. Characterization on the initial growth shows that the CuPc molecules assemble in a "rod-like" nano crystal with interconnected network on ATO, which probably promotes the charge carrier transport, whereas, they form isolated small islands with amorphous structure on SiO2. In addition, a better metal/organic contact is observed on ATO, which benefits the charge carrier injection. Our studies suggest that the low-temperature, solution-processed high-k ATO is a promising candidate for fabrication of high-performance, low-voltage OTFTs. Furthermore, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. Hence, investigation the effects of interfaces engineering on improving the electrical characteristics of OTFTs is of great technological importance. For the dielectric/semiconductor interface, an octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) is used to modify the surface of ATO (ODPA/ATO). For the electrode/semiconductor interface, a simple in-situ modified Cu (M-Cu) is employed as source-drain (S/D) electrodes in stead of commonly used Au. The electrical characteristics of pentacene TFT are drastically enhanced upon interfaces modification. Moreover, by encapsulating the M-Cu with a thin layer of Au (Au/ M-Cu), the device performance is further improved. The detailed mechanism is systematically explored. Finally, organic electronic devices on flexible plastic substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. One of the most critical issues in realization flexible OTFTs is the integration of gate dielectrics with flexible substrates. We have successfully incorporated the ODPA/ATO with Au coated flexible polyimide (PI) substrate. By using Au/M-Cu as S/D electrode, the flexible pentacene TFTs show outstanding electrical performance. In addition, the mechanical flexibility and reliability of the devices are studied in detail. Our approach demonstrates an effective way to realize low-cost, high-performance flexible OTFTs.

Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites.

PubMed

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D; Hill, Curtis W; Brewer, Jeffrey C; Tucker, Dennis S; Cheng, Z-Y

2016-10-21

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu 3 Ti 4 O 12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced-up to about 10 times - by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10 -1 ). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing.

Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites

NASA Astrophysics Data System (ADS)

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D.; Hill, Curtis W.; Brewer, Jeffrey C.; Tucker, Dennis S.; Cheng, Z.-Y.

2016-10-01

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu3Ti4O12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced-up to about 10 times - by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10-1). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing.

Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites

PubMed Central

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D.; Hill, Curtis W.; Brewer, Jeffrey C.; Tucker, Dennis S.; Cheng, Z.-Y.

2016-01-01

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu3Ti4O12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced–up to about 10 times – by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10−1). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing. PMID:27767184

Development of external cooling cryo-resistive cable systems. Part 2: Insulation characteristics on 66 kV rated cryo-resistive testing cable

NASA Astrophysics Data System (ADS)

Ishihara, Kaoru; Akita, Shige; Suzuki, Hiroshi; Ogata, Junichi; Nemoto, Minoru

1987-08-01

Cryo-resistive cable system was tested to demonstrate dielectric characteristics. Dielectric characteristics of 66kV cryo-resistive cable at the start of immersion cooling in the liquid nitrogen were 2.25 specific dielectric constant and 0.18 percent dielectric loss which was less than 0.4 percent , the aimed value. Electrostatic capacity and dielectric loss tangent of dielectric characteristics under the applied voltage did not depend on the voltage and the dielectric loss was less than 0.4 percent through the temperature range from -170 to -190C. These values fulfilled the specifications on 275kV class cryo-resistive cable design. The tested cable passed the cable test on 66kV oil-filled cable (ac 90kV, 10 min), but broken down at ac 110kV on the way to endurance testing voltage 130kV. The breakdown occurred due to the mechanical damage of cable insulator by bending and thermal contraction of the cable. It is necessary from these facts to develop flexible cable terminal and joint which can absorb the contraction to realize 275kV cryo-resistive cable. (19 figs, 7 tabs, 15 refs).

Dielectric Properties of PANI/CuO Nanocomposites

NASA Astrophysics Data System (ADS)

Ambalagi, Sharanabasamma M.; Devendrappa, Mahalesh; Nagaraja, Sannakki; Sannakki, Basavaraja

2018-02-01

The combustion method is used to prepare the Copper Oxide (CuO) nanoparticles. The nanocomposites of Polyaniline (PANI) by doping with copper oxide nanoparticles have synthesized at 10, 20, 30, 40 and 50 different weight percentages during the in-situ polymerization. The samples of nanocomposite of PANI-CuO were characterized by using X-Ray diffraction (XRD) technique. The physical properties such as dielectric constant, dielectric loss and A C conductivity of the nanocomposites are studied as a function of frequency in the range 5Hz-35MHz at room temperature. It is found that the dielectric constant decreases as the frequency increases. The dielectric constant it remains constant at higher frequencies and it is also observed that in particular frequency both the dielectric constant and dielectric loss are decreased as a weight percentage of CuO increased. In case of AC conductivity it is found that as the frequency increases the AC conductivity remains constant up to 3.56MHz and afterwards it increases as frequency increases. This is due to the increase in charge carriers through the hopping mechanism in the polymer nanocomposites. It is also observed that as a weight percentage of CuO increased the AC conductivity is also increasing at a particular frequency.

Scattering by rotationally symmetric anisotropic spheres: potential formulation and parametric studies.

PubMed

Qiu, Cheng-Wei; Li, Le-Wei; Yeo, Tat-Soon; Zouhdi, Saïd

2007-02-01

Vector potential formulation and parametric studies of electromagnetic scattering problems of a sphere characterized by the rotationally symmetric anisotropy are studied. Both epsilon and mu tensors are considered herein, and four elementary parameters are utilized to specify the material properties in the structure. The field representations can be obtained in terms of two potentials, and both TE (TM) modes (with respect to r) inside (outside) the sphere can be derived and expressed in terms of a series of fractional-order (in a real or complex number) Ricatti-Bessel functions. The effects due to either electric anisotropy ratio (Ae=epsilont/epsilonr) or magnetic anisotropy ratio (Am=mut/mur) on the radar cross section (RCS) are considered, and the hybrid effects due to both Ae and Am are also examined extensively. It is found that the material anisotropy affects significantly the scattering behaviors of three-dimensional dielectric objects. For absorbing spheres, however, the Ae or Am no longer plays a significant role as in lossless dielectric spheres and the anisotropic dependence of RCS values is found to be predictable. The hybrid effects of Ae and Am are considered for absorbing spheres as well, but it is found that the RCS can be greatly reduced by controlling the material parameters. Details of the theoretical treatment and numerical results are presented.

Bounds on quantum confinement effects in metal nanoparticles

NASA Astrophysics Data System (ADS)

Blackman, G. Neal; Genov, Dentcho A.

2018-03-01

Quantum size effects on the permittivity of metal nanoparticles are investigated using the quantum box model. Explicit upper and lower bounds are derived for the permittivity and relaxation rates due to quantum confinement effects. These bounds are verified numerically, and the size dependence and frequency dependence of the empirical Drude size parameter is extracted from the model. Results suggest that the common practice of empirically modifying the dielectric function can lead to inaccurate predictions for highly uniform distributions of finite-sized particles.

Internal charging analysis tools, NUMIT 2.0 and 3D NUMIT, and those applications on Europa Clipper and Juno missions

NASA Astrophysics Data System (ADS)

Kim, W.; Chinn, J. Z.; Katz, I.; Jun, I.; Garrett, H. B.

2016-12-01

One of the major concerns in the spacecraft design due to natural space environment interaction is the internal charging in dielectric materials and floating conductors, especially for missions encountering a high radiation environment such as NASA's Juno and proposed Europa Clipper Missions. Sufficiently energetic electrons can penetrate the spacecraft structure or electronics chassis and stop within dielectrics and floating conductors. Electrons can accumulate in dielectrics over time due to the dielectrics' very low conductivity. If the electric field resulting from a charge buildup becomes higher than the breakdown threshold of the dielectric, discharge may occur, potentially damaging near-by sensitive electronics. Indeed, numerous spacecraft anomalies and failures have been attributed to this phenomenon, referred to as internal electrostatic discharge (iESD). Therefore, accurate assessment of the risk of iESD for a given space environment and dielectric geometry is important for spacecraft reliability. To evaluate the risk of iESD, we developed a general three dimensional internal charge analyses method, 3D NUMIT by combining a Monte Carlo radiation transport simulation tool such as MCNPX or GEANT4 and a commercial FEA software such as COMSOL. Also for a simple and fast internal charging assessment, we significantly improved the widely used one dimensional internal charging assessment code, NUMIT and named NUMIT 2.0. We will show the new features of NUMIT 2.0 and the capability of 3D NUMIT with several examples of applications of those tools to iESD assessments on Juno and Europa Clipper Missions.

Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.

PubMed

Smith, Casey; Qaisi, Ramy; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa

2013-07-23

Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11,000 cm(2)/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low tox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance.

The effects of dielectric decrement and finite ion size on differential capacitance of electrolytically gated graphene

NASA Astrophysics Data System (ADS)

Daniels, Lindsey; Scott, Matthew; Mišković, Z. L.

2018-06-01

We analyze the effects of dielectric decrement and finite ion size in an aqueous electrolyte on the capacitance of a graphene electrode, and make comparisons with the effects of dielectric saturation combined with finite ion size. We first derive conditions for the cross-over from a camel-shaped to a bell-shaped capacitance of the diffuse layer. We show next that the total capacitance is dominated by a V-shaped quantum capacitance of graphene at low potentials. A broad peak develops in the total capacitance at high potentials, which is sensitive to the ion size with dielectric saturation, but is stable with dielectric decrement.

Giant Electrocaloric Effect in Ferroelectrics with Tailored Polaw-Nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Qiming

2015-06-24

Electrocaloric effect (ECE) is the temperature and/or entropy change in a dielectric material caused by an electric field induced polarization change. Although ECE has been studied since 1930s, the very small ECE observed in earlier studies in bulk materials before 2007 makes it not attractive for practical cooling applications. The objectives of this DOE program are to carry out a systematical scientific research on the entropy change and ECE in polar-dielectrics, especially ferroelectrics based on several fundamental hypotheses and to search for answers on a few scientific questions. Especially, this research program developed a series of polar-dielectric materials with controlledmore » nano- and meso-structures and carried out studies on how these structures affect the polar-ordering, correlations, energy landscapes, and consequently the entropy states at different phases and ECE. The key hypotheses of the program include: (i) Whether a large ECE can be obtained near the ferroelectric-paraelectric (FE-PE) transition in properly designed ferroelectrics which possess large polarization P and large ß (the coefficient in the thermodynamic Landau theory where the Gibbs free energy G = G = G 0+ ½ a P 2 +1/4 b P 4 + 1/6 c P 6 – EP, and a = ß (T-T c), where b,c,ß and Tc are constants)? (ii) What determines/determine ß? Whether a ferroelectric material with built-in disorders, which disrupt the polar-correlations and enabling a large number of local polar-states, such as a properly designed ferroelectric relaxor, can achieve a large ECE? (iii) How to design a ferroelectric material which has flat energy landscape so that the energy barriers for switching among different phases are vanishingly small? What are the necessary conditions to maximize the number of coexisting phases? (iv) How to design ferroelectric materials with a large tunable dielectric response? That is, at zero electric field, the material possesses very low polar-correlation and hence a very small dielectric constant, under the application of electric field, the material develops long range polar-correlation and hence a high dielectric response. Studying and developing these materials will deepen our understanding on the polarization responses in strongly coupled materials and the roles of molecular and nano, meso-, and micro-scale defects and structures on the polarization responses. On the application front, besides ECE, these dielectrics will also have great impact on micro-electronics and communications. (v) The multi-field effect, besides the electric, elastic and even magnetic effects, could be made use of to tune the energy landscape of polar-materials and hence enhance the ECE. Hence the question is what are the suitable material systems to develop and maximize the multi-field effects? (vi) Besides solid dielectric, liquid dielectrics with properly designed molecular structures and dipolar coupling can also exhibit a large ECE near the dipolar order-disorder transition. The study of order-disorder transition and their influence on entropy change and ECE will provide additional avenue to study dielectrics and understand relationship between the polar-ordering and dipolar entropy in dielectrics. (vii) Besides the regular ECE in which applying an electric field will induce dipolar ordering, there are dielectric material systems which can exhibit negative ECE in which the applied field will reduce the dipolar ordering and anomalous ECE in which applying an electric field pulse will generate cooling only. The question is how to control and balance the nano- and meso-scale polar coupling in dielectrics to achieve such effects? ECE in dielectrics provides an interesting and effective avenue to probe the polar-correlation in dielectrics. Thus the study of ECE in polar-dielectrics, besides the application values, will also deepen our understanding of strongly coupled materials systems, phase transitions, and materials systems with nano- and meso-scale disorders. Through the efforts of this DoE program, we have developed understandings for many questions and materials approaches for many hypotheses listed above. The major accomplishments include: (i) The first one to show that a giant ECE can be obtained in bulk materials of ferroelectric P(VDF-TrFE) copolymer, which has a large ß coefficient and high polarization, near FE-PE transition.[1,3,12] (ii) The first who developed the theoretical analyses on the upper bound of dipolar entropy change in polar-materials and the general approach to maximize the coexisting phases with vanishingly small switching fields among the coexisting phases[10,23] Experimental results confirm these theoretical predictions.[24] (iii) The first to show that the relaxor ferroelectrics, due to built-in defects structures at nano- and meso scale, exhibit a giant ECE over a broad temperature range.[1,3,7,14] (iv) The first to show that a large ECE can be obtained near order-disorder transition in dielectric fluids such as liquid crystals with large dielectric anisotropy. Also the study developed a general approach for developing dielectric fluids to achieve a large electric field induced entropy change.[26] (v) We are starting to explore the multi-field effect (multiferroic effect) in nanocomposites in which there exist large dielectric contrasts between the matrix and nanofilelrs and showed that a significantly enhanced ECE compared with polymer matrix.[36] (vi) By facially tuning the nano- and meso-scale dipolar coupling, we are the first to show that an anomalous ECE can be obtained in a relaxor/normal ferroelectric blend.[39] (vii) Introduced and demonstrated that the internal bias field approach can be effective in enhancing the EC response at low electric field. The result is significant since for practical applications, a low applied field is highly desired. (viii) A high sensitivity ECE characterization system has been developed. This program has made major contributions to the advancement of the EC materials and understandings of EC phenomena. To reflect the advancement in the EC materials development and scientific understandings on ECE through in this time period (from Sept. 1, 2007 to May 2015), this final report is written based on the reports complied each year through the program. Some early works on the ECE which were obtained using the indirect method are not included in this report.« less

Investigation of electrical studies of spinel FeCo2O4 synthesized by sol-gel method

NASA Astrophysics Data System (ADS)

Lobo, Laurel Simon; Kalainathan, S.; Kumar, A. Ruban

2015-12-01

In this work, spinel FeCo2O4 is synthesized by sol-gel method using succinic acid as a chelating agent at 900 °C. The structural, spectroscopic and morphological characterization was carried out by using X-ray diffraction (XRD), Fourier Transform Infrared Spectroscopy (FT-IR) and Scanning Electron Microscopy equipped with Energy Dispersive X-ray spectrometer (SEM-EDX). The M-H loop at room temperature confirms the ferromagnetic property of the sample. The frequency and temperature dependence of dielectric constant (εʹ) and dielectric loss (tan δ) shows the presence of Maxwell-Wagner relaxation in the sample due to the presence of oxygen vacancy. Nyquist plot for frequency and temperature domain signifies the presence of grain effect, grain boundary effect and electrode interface in the conduction process. Electric modulus under suppression of electrode polarization shows the grain and grain boundary effects. The electrode polarization is observed in the lower frequency range of the conductivity graph.

EFFECT OF MICROWAVE SINTERING ON THE STRUCTURAL AND ELECTRICAL PROPERTIES OF Li0.51Zn0.2Ti0.2V0.01Fe2.08O4 FERRITE

NASA Astrophysics Data System (ADS)

Maisnam, Mamata; Phanjoubam, Sumitra

2013-07-01

Effect of microwave sintering on the structural and electrical properties of Li+0.51Zn2+0.2Ti4+0.2V5+0.01Fe3+2.08O2-4 is studied in comparison with that of conventionally sintered one. The technique is advantageous in terms of significantly reduced size of microwave kilns and rapid heating compared to the cumbersome and slow heating of conventional sintering technology. Microwave sintering produced enhanced densification and much finer microstructures. The DC resistivity is markedly increased. Microwave sintering reduces chances of evaporation of lithium and oxygen during sintering of lithium based ferrites resulting in formation of lesser ferrous ions. This has profound effect on the electrical properties of microwave sintered ferrites. The dielectric constant is significantly reduced possibly due to reduced space charge polarization and the temperature dependence of the dielectric properties are also studied.

Electrical and dielectric properties of foam injection-molded polypropylene/multiwalled carbon nanotube composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ameli, A.; Nofar, M.; Saniei, M.

A combination of high dielectric permittivity (ε′) and low dielectric loss (tan δ) is required for charge storage applications. In percolative systems such as conductive polymer composites, however, obtaining high ε′ and low tan δ is very challenging due to the sharp insulation-conduction transition near the threshold region. Due to the particular arrangement of conductive fillers induced by both foaming and injection molding processes, they may address this issue. Therefore, this work evaluates the application of foam injection molding process in fabricating polymer nanocomposites for energy storage. Polypropylene-multiwalled carbon nanotubes (PP-MWCNT) composites were prepared by melt mixing and foamed inmore » an injection molding process. Electrical conductivity (σ), ε′ and tan δ were then characterized. Also, scanning and transmission electron microscopy (SEM and TEM) was used to investigate the carbon nanotube’s arrangement as well as cellular morphology. The results showed that foam injection-molded composites exhibited highly superior dielectric properties to those of solid counterparts. For instance, foamed samples had ε′=68.3 and tan δ =0.05 (at 1.25 vol.% MWCNT), as opposed to ε′=17.8 and tan δ=0.04 in solid samples (at 2.56 vol.% MWCNT). The results of this work reveal that high performance dielectric nanocomposites can be developed using foam injection molding technologies for charge storage applications.« less

Interface engineering and reliability characteristics of hafnium dioxide with poly silicon gate and dual metal (ruthenium-tantalum alloy, ruthenium) gate electrode for beyond 65 nm technology

NASA Astrophysics Data System (ADS)

Kim, Young-Hee

Chip density and performance improvements have been driven by aggressive scaling of semiconductor devices. In both logic and memory applications, SiO 2 gate dielectrics has reached its physical limit, direct tunneling resulting from scaling down of dielectrics thickness. Therefore high-k dielectrics have attracted a great deal of attention from industries as the replacement of conventional SiO2 gate dielectrics. So far, lots of candidate materials have been evaluated and Hf-based high-k dielectrics were chosen to the promising materials for gate dielectrics. However, lots of issues were identified and more thorough researches were carried out on Hf-based high-k dielectrics. For instances, mobility degradation, charge trapping, crystallization, Fermi level pinning, interface engineering, and reliability studies. In this research, reliability study of HfO2 were explored with poly gate and dual metal (Ru-Ta alloy, Ru) gate electrode as well as interface engineering. Hard breakdown and soft breakdown were compared and Weibull slope of soft breakdown was smaller than that of hard breakdown, which led to a potential high-k scaling issue. Dynamic reliability has been studied and the combination of trapping and detrapping contributed the enhancement of lifetime projection. Polarity dependence was shown that substrate injection might reduce lifetime projection as well as it increased soft breakdown behavior. Interface tunneling mechanism was suggested with dual metal gate technology. Soft breakdown (l st breakdown) was mainly due to one layer breakdown of bi-layer structure. Low weibull slope was in part attributed to low barrier height of HfO 2 compared to interface layer. Interface layer engineering was thoroughly studied in terms of mobility, swing, and short channel effect using deep sub-micron MOSFET devices. In fact, Hf-based high-k dielectrics could be scaled down to below EOT of ˜10A and it successfully achieved the competitive performance goals. However, it is still necessary to understand what is intrinsic we can not change, or what is extrinsic one we can improve.

Hydrodynamic limit of Wigner-Poisson kinetic theory: Revisited

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akbari-Moghanjoughi, M.; International Centre for Advanced Studies in Physical Sciences and Institute for Theoretical Physics, Ruhr University Bochum, D-44780 Bochum

2015-02-15

In this paper, we revisit the hydrodynamic limit of the Langmuir wave dispersion relation based on the Wigner-Poisson model in connection with that obtained directly from the original Lindhard dielectric function based on the random-phase-approximation. It is observed that the (fourth-order) expansion of the exact Lindhard dielectric constant correctly reduces to the hydrodynamic dispersion relation with an additional term of fourth-order, beside that caused by the quantum diffraction effect. It is also revealed that the generalized Lindhard dielectric theory accounts for the recently discovered Shukla-Eliasson attractive potential (SEAP). However, the expansion of the exact Lindhard static dielectric function leads tomore » a k{sup 4} term of different magnitude than that obtained from the linearized quantum hydrodynamics model. It is shown that a correction factor of 1/9 should be included in the term arising from the quantum Bohm potential of the momentum balance equation in fluid model in order for a correct plasma dielectric response treatment. Finally, it is observed that the long-range oscillatory screening potential (Friedel oscillations) of type cos(2k{sub F}r)/r{sup 3}, which is a consequence of the divergence of the dielectric function at point k = 2k{sub F} in a quantum plasma, arises due to the finiteness of the Fermi-wavenumber and is smeared out in the limit of very high electron number-densities, typical of white dwarfs and neutron stars. In the very low electron number-density regime, typical of semiconductors and metals, where the Friedel oscillation wavelength becomes much larger compared to the interparticle distances, the SEAP appears with a much deeper potential valley. It is remarked that the fourth-order approximate Lindhard dielectric constant approaches that of the linearized quantum hydrodynamic in the limit if very high electron number-density. By evaluation of the imaginary part of the Lindhard dielectric function, it is shown that the Landau-damping region in ω-k plane increases dramatically by increase of the electron number-density.« less

Electron transport in high aspect ratio semiconductor nanowires and metal-semiconductor interfaces

NASA Astrophysics Data System (ADS)

Sun, Zhuting

We are facing variability problems for modern semiconductor transistors due to the fact that the performances of nominally identical devices in the scale of 10 100 nm could be dramatically different attributed to the small manufacturing variations. Different doping strategies give statistical variations in the number of dopant atom density ND in the channel. The material size gives variations in wire diameter dW. And the immediate environment of the material leads to an additional level of variability. E.g. vacuum-semiconductor interface causes variations in surface state density Ds, metal-semiconductor interface causes variations in Schottky barrier and dielectric semiconductor interface induces dielectric confinement at small scales. To approach these variability problems, I choose Si-doped GaAs nanowires as an example. I investigate transport in Si-doped GaAs nanowire (NW) samples contacted by lithographically patterned Gold-Titanium films as function of temperature T. I find a drastically different temperature dependence between the wire resistance RW, which is relatively weak, and the zero bias resistance RC, which is strong. I show that the data are consistent with a model based on a sharp donor energy level slightly above the bottom of the semiconductor conduction band and develop a simple method for using transport measurements for estimates of the doping density after nanowire growth. I discuss the predictions of effective free carrier density n eff as function of the surface state density Ds and wire size dW. I also describe a correction to the widely used model of Schottky contacts that improves thermodynamic consistency of the Schottky tunnel barrier profile and show that the original theory may underestimate the barrier conductance under certain conditions. I also provide analytical calculations for shallow silicon dopant energy in GaAs crystals, and find the presence of dielectrics (dielectric screening) and free carriers (Coulomb screening) cause a reduction of ionization energy and shift the donor energy level ED upward, accompanying conduction band EC shift downward due to band gap narrowing for doped semiconductor material. The theoretical results are in a reasonable agreement with previous experimental data. I also find that when the material reduces to nanoscale, dielectric confinement and surface depletion compete with both Coulomb screening and dielectric screening that shift the donor level ED down towards the band gap. The calculation should be appropriate for all types of semiconductors and dopant species.

The effect of diamic acid additives on the dielectric constant of polyimides

NASA Technical Reports Server (NTRS)

Stoakley, Diane M.; St. Clair, Anne K.

1988-01-01

The effect of six selected diamic acids additives (including 2,2-prime bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride-aniline (An); 4,4-prime-oxydiphthalic anhydride-An, 3,3-prime diaminodiphenyl sulfone-phthalic anhydride (PA); 4,4-prime-oxydianiline-PA; 2,2-bis 4(4-aminophenoxy)phenyl hexafluoropropane-PA; and 2,2-bis 4(3-aminophenoxy)phenyl hexafluoropropane-PA) on the dielectric constants of low-dielectric-constant polyimide resins was evaluated. It was found that the effect of the incorporation of the diamic acids on reducing the dielectric constant of polyimides may be limited as the dielectric constant of the base resin itself becomes very low. The additives were found to lower the resin's values of glass transition temperature, with no effect on thermooxidative stability.

Thin film integrated capacitors with sputtered-anodized niobium pentoxide dielectric for decoupling applications

NASA Astrophysics Data System (ADS)

Jacob, Susan

Electronics system miniaturization is a major driver for high-k materials. High-k materials in capacitors allow for high capacitance, enabling system miniaturization. Ta2O5 (k˜24) has been the dominant high-k material in the electronic industry for decoupling capacitors, filter capacitors, etc. In order to facilitate further system miniaturization, this project has investigated thin film integrated capacitors with Nb2O5 dielectric. Nb2O 5 has k˜41 and is a potential candidate for replacing Ta2O5. But, the presence of suboxides (NbO2 and NbO) in the dielectric deteriorates the electrical properties (leakage current, thermal instability of capacitance, etc.). Also, the high oxygen solubility of niobium results in oxygen diffusion from the dielectric to niobium metal, if any is present. The major purpose of this project was to check the ability of NbN as a diffusion barrier and fabricate thermally stable niobium capacitors. As a first step to produce niobium capacitors, the material characterizations of reactively sputtered Nb2O5 and NbN were done. Thickness and film composition, and crystal structures of the sputtered films were obtained and the deposition parameters for the desired stoichiometry were found. Also, anodized Nb2O5 was characterized for its stoichiometry and thickness. To study the effect of nitrides on capacitance and thermal stability, Ta2O5 capacitors were initially fabricated with and without TaN. The results showed that the nitride does not affect the capacitance, and that capacitors with TaN are stable up to 150°C. In the next step, niobium capacitors were first fabricated with anodized dielectric and the oxygen diffusion issues associated with capacitor processing were studied. Reactively sputtered Nb2O5 was anodized to form complete Nb2O5 (with few oxygen vacancies) and NbN was used to sandwich the dielectric. The capacitor fabrication was not successful due to the difficulties in anodizing the sputtered dielectric. Another method, anodizing reactively sputtered Nb2O5 and a thin layer of sputtered niobium metal yielded high yield (99%) capacitors. Capacitors were fabricated with and without NbN and the results showed 93% decrease in leakage for a capacitor with ˜2000 A dielectric when NbN was present in the structure. These capacitors could withstand 20 V and showed 2.7 muA leakage current at 5 V. These results were obtained after thermal storage at 100°C and 150°C in air for 168 hours at each temperature. Two set of experiments were performed using Ta2O5 dielectric: one to determine the effect of anodization end point on the thickness (capacitance) and the second to determine the effect of boiling the dielectric on functional yield. The anodization end point experiment showed that the final current of anodization along with the anodizing voltage determines the anodic oxide thickness. The lower the current, the thicker the films produced by anodization. Therefore, it was important to specify the final current along with the anodization voltage for oxide growth rate. The capacitors formed with boiled wafers showed better functional yield 3 out of 5 times compared with the unboiled wafer. Niobium anodization was studied for the Nb--->Nb 2O5 conversion ratio and the effect of anodization bath temperature on the oxide film; a color chart was prepared for thicknesses ranging from 1900 A - 5000 A. The niobium metal to oxide conversion ratio was found to change with temperature.

Structural and dielectric properties of Al x Zn1- x O ( x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10) nanoparticles

NASA Astrophysics Data System (ADS)

Sharma, Neha; Kumar, Sanjay; Sharma, Varun

2018-05-01

The chemical precipitation method is followed for the synthesis of Al-doped ZnO nanoparticles (NPs) with varying doping concentrations (0, 0.02, 0.04, 0.06, 0.08, and 0.10 M). A single hexagonal crystalline phase of wurtzite structure has been confirmed for all the samples by X-ray diffraction. Crystalline size and microstrain of the un-doped and doped ZnO (NPs) is determined by the Williamson-Hall (W-H) analysis. The optical properties like band gap and Urbach energy are found out by the UV-visible spectroscopy. The functional bonds are detailed by Fourier transmission infrared spectroscopy. The dielectric properties have been shown by doped sample due to hopping mechanisms as compared to the undoped. The loss factor (tan δ) follows an inverse direction as correspond to frequency due to the presence of dielectric dispersion.

The Current State of Silicone-Based Dielectric Elastomer Transducers.

PubMed

Madsen, Frederikke B; Daugaard, Anders E; Hvilsted, Søren; Skov, Anne L

2016-03-01

Silicone elastomers are promising materials for dielectric elastomer transducers (DETs) due to their superior properties such as high efficiency, reliability and fast response times. DETs consist of thin elastomer films sandwiched between compliant electrodes, and they constitute an interesting class of transducer due to their inherent lightweight and potentially large strains. For the field to progress towards industrial implementation, a leap in material development is required, specifically targeting longer lifetime and higher energy densities to provide more efficient transduction at lower driving voltages. In this review, the current state of silicone elastomers for DETs is summarised and critically discussed, including commercial elastomers, composites, polymer blends, grafted elastomers and complex network structures. For future developments in the field it is essential that all aspects of the elastomer are taken into account, namely dielectric losses, lifetime and the very often ignored polymer network integrity and stability. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mechanical, dielectric, and physicochemical properties of impregnating resin based on unsaturated polyesterimides

NASA Astrophysics Data System (ADS)

Fetouhi, Louiza; Petitgas, Benoit; Dantras, Eric; Martinez-Vega, Juan

2017-10-01

This work aims to characterize the dielectric and the mechanical properties of a resin based on an unsaturated polyesterimide diluted in methacrylate reactive diluents used in the impregnation of rotating machines. The broadband dielectric spectrometry and the dynamic mechanical analysis were used to quantify the changes in dielectric and mechanical properties of the network PEI resin, as a function of temperature and frequency. The network characterizations highlight the presence of two main relaxations, α and α', confirmed by the differential scanning calorimetry analysis, showing the complexity of the chemical composition of this resin. The dielectric spectroscopy shows a significant increase in the dielectric values due to an increase of the material conductivity, while the mechanical spectroscopy shows an important decrease of the polymer rigidity and viscosity expressed by an important decrease in the storage modulus. The PEI resin shows a high reactivity when it is submitted in successive heating ramps, which involves in a post-cross-linking reaction. Contribution to the topical issue "Electrical Engineering Symposium (SGE 2016)", edited by Adel Razek

Wave propagation in and around negative-dielectric-constant discharge plasma

NASA Astrophysics Data System (ADS)

Sakai, Osamu; Iwai, Akinori; Omura, Yoshiharu; Iio, Satoshi; Naito, Teruki

2018-03-01

The modes of wave propagation in media with a negative dielectric constant are not simple, unlike those for electromagnetic waves in media with a positive dielectric constant (where modes propagate inside the media with positive phase velocity since the refractive index is usually positive). Instead, they depend on the permeability sign, either positive or negative, and exhibit completely different features. In this report, we investigated a wave confined on the surface of a negative-dielectric-constant and a positive-permeability plasma medium for which the refractive index is imaginary. The propagation mode is similar to surface plasmon polaritons on the metal containing free electrons, but its frequency band is different due to the significant spatial gradient of the dielectric constant and a different pressure term. We also studied a wave with a negative dielectric constant and negative permeability, where the refractive index is negative. This wave can propagate inside the media, but its phase velocity is negative. It also shares similar qualities with waves in plasmonic devices with negative permeability in the photon range.

High temperature dielectric studies of indium-substituted NiCuZn nanoferrites

NASA Astrophysics Data System (ADS)

Hashim, Mohd.; Raghasudha, M.; Shah, Jyoti; Shirsath, Sagar E.; Ravinder, D.; Kumar, Shalendra; Meena, Sher Singh; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

2018-01-01

In this study, indium (In3+)-substituted NiCuZn nanostructured ceramic ferrites with a chemical composition of Ni0.5Cu0.25Zn0.25Fe2-xInxO4 (0.0 ≤ x ≤ 0.5) were prepared by chemical synthesis involving sol-gel chemistry. Single phased cubic spinel structure materials were prepared successfully according to X-ray diffraction and transmission electron microscopy analyses. The dielectric properties of the prepared ferrites were measured using an LCR HiTester at temperatures ranging from room temperature to 300 °C at different frequencies from 102 Hz to 5 × 106 Hz. The variations in the dielectric parameters ε‧ and (tanδ) with temperature demonstrated the frequency- and temperature-dependent characteristics due to electron hopping between the ions. The materials had low dielectric loss values in the high frequency range at all temperatures, which makes them suitable for high frequency microwave applications. A qualitative explanation is provided for the dependences of the dielectric constant and dielectric loss tangent on the frequency, temperature, and composition. Mӧssbauer spectroscopy was employed at room temperature to characterize the magnetic behavior.

Dielectric platforms for surface-enhanced spectroscopies (Conference Presentation)

NASA Astrophysics Data System (ADS)

Maier, Stefan A.

2016-03-01

Plasmonic nanostructures serve as the main backbone of surface enhanced sensing methodologies, yet the associated optical losses lead to localized heating as well as quenching of molecules, complicating their use for enhancement of fluorescent emission. Additionally, conventional plasmonic materials are limited to operation in the visible part of the spectrum. We will elucidate how nanostructures consisting of conventional and polar dielectrics can be employed as a highly promising alternative platform. Dielectric nanostructures can sustain scattering resonances due to both electric and magnetic Mie modes. We have recently predicted high enhanced local electromagnetic field hot spots in dielectric nanoantenna dimers, with the hallmark of spot sizes comparable to those achievable with plasmonic antennas, but with lower optical losses. Here, we will present first experimental evidence for both fluorescence and Raman enhancement in dielectric nanoantennas, including a direct determination of localized heating, and compare to conventional Au dimer antennas. The second part of the talk will focus on the mid-infrared regime of the electromagnetic spectrum, outlining possibilities for surface enhanced infrared absorption spectroscopy based on polar and hyperbolic dielectrics.

Using COMSOL Multiphysics Software to Model Anisotropic Dielectric and Metamaterial Effects in Folded-Waveguide Traveling-Wave Tube Slow-Wave Circuits

NASA Technical Reports Server (NTRS)

Starinshak, David P.; Smith, Nathan D.; Wilson, Jeffrey D.

2008-01-01

The electromagnetic effects of conventional dielectrics, anisotropic dielectrics, and metamaterials were modeled in a terahertz-frequency folded-waveguide slow-wave circuit. Results of attempts to utilize these materials to increase efficiency are presented.

Far-infrared response of spherical quantum dots: Dielectric effects and the generalized Kohn's theorem

NASA Astrophysics Data System (ADS)

Movilla, J. L.; Planelles, J.

2007-05-01

The influence of the dielectric environment on the far-infrared (FIR) absorption spectra of two-electron spherical quantum dots is theoretically studied. Effective mass and envelope function approaches with realistic steplike confining potentials are used. Special attention is paid to absorptions that are induced by the electron-electron interaction. High confining barriers make the FIR absorption coefficients almost independent of the quantum dot dielectric environment. Low barrier heights and strong dielectric mismatches preserve the strong fundamental (Kohn) mode but yield the cancellation of excited absorptions, thus monitoring dielectrically induced phase transitions from volume to surface states.

Effect of two different superstrate layers on bismuth titanate (BiT) array antennas.

PubMed

Wee, F H; Malek, F; Al-Amani, A U; Ghani, Farid

2014-01-15

The microwave industry has shown increasing interest in electronic ceramic material (ECM) due to its advantages, such as light weight, low cost, low loss, and high dielectric strength. In this paper, simple antennas covered by superstrate layers for 2.30 GHz to 2.50 GHz are proposed. The antennas are compact and have the capability of producing high performance in terms of gain, directivity, and radiation efficiency. Bismuth titanate with high dielectric constant of 21, was utilized as the ECM, while the superstrate layers chosen included a split ring resonator and dielectric material. The superstrate layers were designed for some improvement in the performance of directivity, gain, and return loss. The proposed antennas were simulated and fabricated. The results obtained were small antennas that possess high gain and high directivity with 360°, omni-directional signal transmission that resonant types of conventional dipole antenna cannot achieve. The gain of the antenna with the superstrate layer was enhanced by about 1 dBi over the antenna without a superstrate layer at 2.40 GHz.

Effect of Two Different Superstrate Layers On Bismuth Titanate (BiT) Array Antennas

NASA Astrophysics Data System (ADS)

Wee, F. H.; Malek, F.; Al-Amani, A. U.; Ghani, Farid

2014-01-01

The microwave industry has shown increasing interest in electronic ceramic material (ECM) due to its advantages, such as light weight, low cost, low loss, and high dielectric strength. In this paper, simple antennas covered by superstrate layers for 2.30 GHz to 2.50 GHz are proposed. The antennas are compact and have the capability of producing high performance in terms of gain, directivity, and radiation efficiency. Bismuth titanate with high dielectric constant of 21, was utilized as the ECM, while the superstrate layers chosen included a split ring resonator and dielectric material. The superstrate layers were designed for some improvement in the performance of directivity, gain, and return loss. The proposed antennas were simulated and fabricated. The results obtained were small antennas that possess high gain and high directivity with 360°, omni-directional signal transmission that resonant types of conventional dipole antenna cannot achieve. The gain of the antenna with the superstrate layer was enhanced by about 1 dBi over the antenna without a superstrate layer at 2.40 GHz.

Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications

NASA Astrophysics Data System (ADS)

Du, Jiangfeng; Li, Zhenchao; Liu, Dong; Bai, Zhiyuan; Liu, Yang; Yu, Qi

2017-11-01

In this work, a vertical GaN p-n diode with a high-K/low-K compound dielectric structure (GaN CD-VGD) is proposed and designed to achieve a record high breakdown voltage (BV) with a low specific on-resistance (Ron,sp). By introducing compound dielectric structure, the electric field near the p-n junction interface is suppressed due to the effects of high-K passivation layer, and a new electric field peak is induced into the n-type drift region, because of a discontinuity of electrical field at the interface of high-K and low-K layer. Therefore the distribution of electric field in GaN p-n diode becomes more uniform and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN CD-VGD with a BV of 10650 V and a Ron,sp of 14.3 mΩ cm2, resulting in a record high figure-of-merit of 8 GW/cm2.

Effect of zinc oxide nanoparticles on dielectric behavior of nematic liquid crystal

NASA Astrophysics Data System (ADS)

Sharma, Amit; Kumar, Pankaj; Malik, Praveen

2018-05-01

In this work, phase transition and dielectric behavior of nematic liquid crystal (NLC), E7 and zinc oxide (ZnO) nanoparticles (NPs) doped nematic liquid crystals are investigated. Effect of nano-particles dispersion is analyzed and compared with the dielectric behavior of E7 and E7-ZnO. Frequency dependent dielectric permittivity at various temperatures in nematic phase for E7 and E7-ZnO sample is also studied.

Observations of ETI under dielectric-overcoated aluminum pulsed to hundreds of Tesla

NASA Astrophysics Data System (ADS)

Hutchinson, Trevor; Bauer, Bruno; Fuelling, Stephan; Yates, Kevin; Awe, Thomas; Yelton, Graham

2016-10-01

MagLIF is an inertial confinement concept that takes advantage of relaxed fusion criteria due to premagnetized and preheated fuel. The drive surface is particularly susceptible to highly azimuthally correlated magneto-Rayleigh Taylor (MRT) instabilities, which section the liner wall and compromise confinement. This degree of azimuthal correlation is not due to residual lathe machining or surface roughness and a growing body of evidence suggest electrothermal instabilities (ETI) seed the MRT instability and allow for levels of azimuthal correlation that have been observed experimentally. Implementation of dielectric coatings on Sandia's Z accelerator has reduced MRT amplitudes by at least a factor of ten, which simulations suggest is due to mass tamping of the ETI. However, neither ETI nor its theorized suppression via an applied dielectric overcoat has been experimentally observed on a thick wire. We will report on experimental observations of ETI on the surface of 500 um radius aluminum rods with a 70 um parylene-N overcoat pulsed with 1 MA in 100 ns. This work was funded in part by Sandia's Laboratory Directed Research and Development Program (Project No. 178661).

Size effects on electrical properties of chemically grown zinc oxide nanoparticles

NASA Astrophysics Data System (ADS)

Rathod, K. N.; Joshi, Zalak; Dhruv, Davit; Gadani, Keval; Boricha, Hetal; Joshi, A. D.; Solanki, P. S.; Shah, N. A.

2018-03-01

In the present article, we study ZnO nanoparticles grown by cost effective sol–gel technique for various electrical properties. Structural studies performed by x-ray diffraction (XRD) revealed hexagonal unit cell phase with no observed impurities. Transmission electron microscopy (TEM) and particle size analyzer showed increased average particle size due to agglomeration effect with higher sintering. Dielectric constant (ε‧) decreases with increase in frequency because of the disability of dipoles to follow higher electric field. With higher sintering, dielectric constant reduced owing to the important role of increased formation of oxygen vacancy defects. Universal dielectric response (UDR) was verified by straight line fitting of log (fε‧) versus log (f) plots. All samples exhibit UDR behavior and with higher sintering more contribution from crystal cores. Impedance studies suggest an important role of boundary density while Cole–Cole (Z″ versus Z‧) plots have been studied for the relaxation behavior of the samples. Average normalized change (ANC) in impedance has been studied for all the samples wherein boundaries play an important role. Frequency dependent electrical conductivity has been understood on the basis of Jonscher’s universal power law. Jonscher’s law fits suggest that conduction of charge carrier is possible in the context of correlated barrier hopping (CBH) mechanism for lower temperature sintered sample while for higher temperature sintered ZnO samples, Maxwell–Wagner (M–W) relaxation process has been determined.

Interface depolarization field as common denominator of fatigue and size effect in Pb(Zr0.54Ti0.46)O3 ferroelectric thin film capacitors

NASA Astrophysics Data System (ADS)

Bouregba, R.; Sama, N.; Soyer, C.; Poullain, G.; Remiens, D.

2010-05-01

Dielectric, hysteresis and fatigue measurements are performed on Pb(Zr0.54Ti0.46)O3 (PZT) thin film capacitors with different thicknesses and different electrode configurations, using platinum and LaNiO3 conducting oxide. The data are compared with those collected in a previous work devoted to study of size effect by R. Bouregba et al., [J. Appl. Phys. 106, 044101 (2009)]. Deterioration of the ferroelectric properties, consecutive to fatigue cycling and thickness downscaling, presents very similar characteristics and allows drawing up a direct correlation between the two phenomena. Namely, interface depolarization field (Edep) resulting from interface chemistry is found to be the common denominator, fatigue phenomena is manifestation of strengthen of Edep in the course of time. Change in dielectric permittivity, in remnant and coercive values as well as in the shape of hysteresis loops are mediated by competition between degradation of dielectric properties of the interfaces and possible accumulation of interface space charge. It is proposed that presence in the band gap of trap energy levels with large time constant due to defects in small nonferroelectric regions at the electrode—PZT film interfaces ultimately governs the aging process. Size effect and aging process may be seen as two facets of the same underlying mechanism, the only difference lies in the observation time of the phenomena.

A comparative study of nano-SiO2 and nano-TiO2 fillers on proton conductivity and dielectric response of a silicotungstic acid-H3PO4-poly(vinyl alcohol) polymer electrolyte.

PubMed

Gao, Han; Lian, Keryn

2014-01-08

The effects of nano-SiO2 and nano-TiO2 fillers on a thin film silicotungstic acid (SiWA)-H3PO4-poly(vinyl alcohol) (PVA) proton conducting polymer electrolyte were studied and compared with respect to their proton conductivity, environmental stability, and dielectric properties, across a temperature range from 243 to 323 K. Three major effects of these fillers have been identified: (a) barrier effect; (b) intrinsic dielectric constant effect; and (c) water retention effect. Dielectric analyses were used to differentiate these effects on polymer electrolyte-enabled capacitors. Capacitor performance was correlated to electrolyte properties through dielectric constant and dielectric loss spectra. Using a single-ion approach, proton density and proton mobility of each polymer electrolyte were derived as a function of temperature. The results allow us to deconvolute the different contributions to proton conductivity in SiWA-H3PO4-PVA-based electrolytes, especially in terms of the effects of fillers on the dynamic equilibrium of free protons and protonated water in the electrolytes.

Correlation of an infrared absorption with carriers in rare-earth monoantimonides

NASA Astrophysics Data System (ADS)

Kwon, Y. S.; Jung, M. H.; Lee, K. R.; Kimura, S.; Suzuki, T.

1997-09-01

Dielectric constants spectra were obtained in the single crystals LaSb, PrSb, GdSb and DySb at several temperatures. The spectra for these crystals except for LaSb show Drude's behavior with a hump due to an anomalous absorption lying at about 0.25 eV. The inverse of effective electron number ( NIA) of the absorption is linear in temperature, and the NIA at each temperature is dependent on the square of the effective Bohr magneton of each rare-earth ion. The sum of the number of effective electrons due to Drude adsorption and that due to infrared absorption agree well with the number of carriers obtained from their band calculations or their dHvAs. Therefore, this absorption seems to be due to the intraband transition induced by the scattering between the spin of carriers and the localized magnetic moments at each site of rare-earth ion.

Characteristics of nanocomposites and semiconductor heterostructure wafers using THz spectroscopy

NASA Astrophysics Data System (ADS)

Altan, Hakan

All optical, THz-Time Domain Spectroscopic (THz-TDS) methods were employed towards determining the electrical characteristics of Single Walled Carbon Nanotubes, Ion Implanted Si nanoclusters and Si1-xGe x, HFO2, SiO2 on p-type Si wafers. For the nanoscale composite materials, Visible Pump/THz Probe spectroscopy measurements were performed after observing that the samples were not sensitive to the THz radiation alone. The results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photo-induced localized states from 0.2 to 0.7THz. The THz transmission is modeled through the photoexcited layer with an effective dielectric constant described by a Drude + Lorentz model and given by Maxwell-Garnett theory. Comparisons are made with other prevalent theories that describe electronic transport. Similar experiments were repeated for ion-implanted, 3-4nm Si nanoclusters in fused silica for which a similar behavior was observed. In addition, a change in reflection from Si1-xGex on Si, 200mm diameter semiconductor heterostructure wafers with 10% or 15% Ge content, was measured using THz-TDS methods. Drude model is utilized for the transmission/reflection measurements and from the reflection data the mobility of each wafer is estimated. Furthermore, the effect of high-kappa dielectric material (HfO2) on the electrical properties of p-type silicon wafers was characterized by utilizing non-contact, differential (pump-pump off) spectroscopic methods to differ between HfO2 and SiO 2 on Si wafers. The measurements are analyzed in two distinct transmission models, where one is an exact representation of the layered structure for each wafer and the other assumed that the response observed from the differential THz transmission was solely due to effects from interfacial traps between the dielectric layer and the substrate. The latter gave a more accurate picture of the carrier dynamics. From these measurements the effect of interfacial defects on transmission and mobility are quantitatively discussed.

Compositionally Graded Multilayer Ceramic Capacitors.

PubMed

Song, Hyun-Cheol; Zhou, Jie E; Maurya, Deepam; Yan, Yongke; Wang, Yu U; Priya, Shashank

2017-09-27

Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. Here, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (<2.5%) over the required temperature ranges specified in the standard industrial classifications. The compositional grading resulted in generation of internal bias field which enhanced the tunability due to increased nonlinearity. The electric field tunability of MLCCs provides an important avenue for design of miniature filters and power converters.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Hyun-Cheol; Zhou, Jie E.; Maurya, Deepam

Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. In this paper, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (<2.5%) over the required temperature ranges specified in the standard industrial classifications. The compositional grading resulted in generation of internal bias field which enhanced the tunability due to increased nonlinearity. The electric field tunability of MLCCs provides an important avenue for design of miniature filters andmore » power converters.« less

Measurement of dielectric properties at low temperatures: application to the study of magnetoresistive manganite/ insulating oxide bulk composites

NASA Astrophysics Data System (ADS)

Vanderbemden, P.; Rivas-Murias, B.; Lovchinov, V.; Vertruyen, B.

2010-11-01

In this paper, we report low temperature dielectric measurements of bulk composite electroceramic samples containing a colossal magnetoresistive (CMR) manganite phase (La0.7Ca0.3MnO3 [abbreviated LCMO]) and an insulating phase (Mn3O4). Details of the experimental system are given and possible experimental artefacts due to moisture are outlined. For a LCMO volume fraction of ~ 16%, the permittivity of the LCMO/ Mn3O4 composite at T = 50 K is found to be much higher than that of pure Mn3O4 and magnetic field dependent. This effect is related to an extrinsic space charge polarization mechanism between the insulating phase (Mn3O4) and the conducting magnetoresistive phase (LCMO).

Spectroscopic ellipsometric studies of the dielectric function of Cd1-x-yMnxFeyTe single crystals

NASA Astrophysics Data System (ADS)

Hwang, Younghun; Kim, Hyekyeong; Um, Youngho; Park, Hyoyeol

2004-06-01

Cd1-x-yMnxFeyTe single crystals grown by the vertical Bridgman method have been studied by measuring the complex dielectric function using spectroscopic ellipsometry in the 1.5 5.5 eV photon energy range at room temperature. The CP energy parameters of the E0, E1, E1 + 1, and E2 structures were determined by fitting the second-derivative spectra (d2/d2) with a theoretical model, i.e., the standard critical point (SCP) line shapes. The E1, E1 + 1, and E2 energies decreased with increasing Fe composition y, which is due to the hybridization effect of the valence and conduction bands in Cd1-xMnxTe with Fe 3d levels.

Molecular rotation-vibration dynamics of low-symmetric hydrate crystal in the terahertz region.

PubMed

Fu, Xiaojian; Wu, Hongya; Xi, Xiaoqing; Zhou, Ji

2014-01-16

The rotational and vibrational dynamics of molecules in copper sulfate pentahydrate crystal are investigated with terahertz dielectric spectra. It is shown that the relaxation-like dielectric dispersion in the low frequency region is related to the reorientation of water molecules under the driving of terahertz electric field, whereas the resonant dispersion can be ascribed to lattice vibration. It is also found that, due to the hydrogen-bond effect, the vibrational mode at about 1.83 THz along [-111] direction softens with decreasing temperature, that is, the crystal expands in this direction when cooled. On the contrary, the mode hardens in the direction perpendicular to [-111] during the cooling process. This contributes to the further understanding of the molecular structure and bonding features of hydrate crystals.

Dissecting ion-specific dielectric spectra of sodium-halide solutions into solvation water and ionic contributions.

PubMed

Rinne, Klaus F; Gekle, Stephan; Netz, Roland R

2014-12-07

Using extensive equilibrium molecular dynamics simulations we determine the dielectric spectra of aqueous solutions of NaF, NaCl, NaBr, and NaI. The ion-specific and concentration-dependent shifts of the static dielectric constants and the dielectric relaxation times match experimental results very well, which serves as a validation of the classical and non-polarizable ionic force fields used. The purely ionic contribution to the dielectric response is negligible, but determines the conductivity of the salt solutions. The ion-water cross correlation contribution is negative and reduces the total dielectric response by about 5%-10% for 1 M solutions. The dominating water dielectric response is decomposed into different water solvation shells and ion-pair configurations, by this the spectral blue shift and the dielectric decrement of salt solutions with increasing salt concentration is demonstrated to be primarily caused by first-solvation shell water. With rising salt concentration the simulated spectra show more pronounced deviations from a single-Debye form and can be well described by a Cole-Cole fit, in quantitative agreement with experiments. Our spectral decomposition into ionic and different water solvation shell contributions does not render the individual contributions more Debye-like, this suggests the non-Debye-like character of the dielectric spectra of salt solutions not to be due to the superposition of different elementary relaxation processes with different relaxation times. Rather, the non-Debye-like character is likely to be an inherent spectral signature of solvation water around ions.

Multiferroic GaN nanofilms grown within Na-4 mica channels

NASA Astrophysics Data System (ADS)

Bhattacharya, Santanu; Datta, A.; Chakravorty, D.

2010-03-01

Gallium nitride nanofilms grown within nanochannels of Na-4 mica structure, exhibit ferromagnetism even at room temperature due to the presence of gallium vacancies at the surfaces of the nanofilms. These nanofilms also show a ferroelectric behavior at room temperature ascribed to a small distortion in the crystal structure of GaN due to its growth within the Na-4 mica nanochannels. A colossal increase in 338% in dielectric constant was observed for an applied magnetic field of 26 kOe. The magnetoelectric effect is ascribed to magnetostriction of magnetic GaN phase.

Magneto-Ionic Control of Interfacial Magnetic Anisotorpy

NASA Astrophysics Data System (ADS)

Bauer, Uwe; Emori, Satoru; Beach, Geoffrey

2014-03-01

Voltage control of magnetism could bring about revolutionary new spintronic memory and logic devices. Here, we examine domain wall (DW) dynamics in ultrathin Co films and nanowires under the influence of a voltage applied across a gadolinium oxide gate dielectric that simultaneously acts as an oxygen ion conductor. We investigate two electrode configurations, one with a continuous gate dielectric and the other with a patterned gate dielectric which exhibits an open oxide edge right underneath the electrode perimeter. We demonstrate that the open oxide edge acts as a fast diffusion path for oxygen ions and allows voltage-induced switching of magnetic anisotropy at the nanoscale by modulating interfacial chemistry rather than charge density. At room temperature this effect is limited to the vicinity of the open oxide edge, but at a temperature of 100°C it allows complete control over magnetic anisotropy across the whole electrode area, due to higher oxygen ion mobility at elevated temperature. We then harness this novel ``magneto-ionic'' effect to create unprecedentedly strong voltage-induced anisotropy modifications of 3000 fJ/Vm and create electrically programmable DW traps with pinning strengths of 650 Oe, enough to bring to a standstill DWs travelling at speeds of at least 20 m/s. This work is supported by the National Science Foundation through grant ECCS-1128439.

Investigation on the growth of CaCu 3Ti 4O 12 thin film and the origins of its dielectric relaxations

NASA Astrophysics Data System (ADS)

Yuan, Wen-Xiang; Hark, S. K.; Xu, H. Y.; Mei, W. N.

2012-01-01

Using the radio frequency magnetron sputtering, CaCu 3Ti 4O 12 (CCTO) thin films were deposited on platinized silicon substrates. The influence of annealing temperature on structures and morphologies of the thin films was investigated. The high annealing temperature increased the crystallinity of the films. Temperature dependence of the dielectric constant revealed an amazing different characteristic of the dielectric relaxation at ˜10 MHz, whose characteristic frequency abnormally increased with the decrease of the measuring temperature unlike the relaxations due to extrinsic origins. Meanwhile, the dielectric constant at high frequencies was close to the value derived from the first principle calculation. All these gave the evidences to ascribe this relaxation to the intrinsic mechanism.

Colossal dielectric constant in PrFeO 3 semiconductor ceramics

NASA Astrophysics Data System (ADS)

Prasad, Bandi Vittal; Rao, G. Narsinga; Chen, J. W.; Babu, D. Suresh

2012-02-01

The perovskite PrFeO 3 ceramics were synthesized via sol-gel method. The dielectric properties and impedance spectroscopy (IS) of these ceramics were studied in the frequency range from 100 Hz to 1000 kHz in the temperature range from 80 K to 300 K. These materials exhibited colossal dielectric constant value of ˜10 4 at room temperature. The response is similar to that observed for relaxorferroelectrics. IS data analysis indicates the ceramics to be electrically heterogeneous semiconductor consisting of semiconducting grains with dielectric constant 30 and more resistive grain boundaries with effective dielectric constant ˜10 4. We conclude, therefore that grain boundary effect is the primary source for the high effective permittivity in PrFeO 3 ceramics.

Cotunneling and polaronic effect in granular systems

NASA Astrophysics Data System (ADS)

Ioselevich, A. S.; Sivak, V. V.

2017-06-01

We theoretically study the conductivity in arrays of metallic grains due to the variable-range multiple cotunneling of electrons with short-range (screened) Coulomb interaction. The system is supposed to be coupled to random stray charges in the dielectric matrix that are only loosely bounded to their spatial positions by elastic forces. The flexibility of the stray charges gives rise to a polaronic effect, which leads to the onset of Arrhenius-type conductivity behavior at low temperatures, replacing conventional Mott variable-range hopping. The effective activation energy logarithmically depends on temperature due to fluctuations of the polaron barrier heights. We present the unified theory that covers both weak and strong polaron effect regimes of hopping in granular metals and describes the crossover from elastic to inelastic cotunneling.

Microstructure and dielectric properties of (Nb + In) co-doped rutile TiO2 ceramics

NASA Astrophysics Data System (ADS)

Li, Jinglei; Li, Fei; Zhuang, Yongyong; Jin, Li; Wang, Linghang; Wei, Xiaoyong; Xu, Zhuo; Zhang, Shujun

2014-08-01

The (Nb + In) co-doped TiO2 ceramics recently attracted considerable attention due to their colossal dielectric permittivity (CP) (˜100,000) and low dielectric loss (˜0.05). In this research, the 0.5 mol. % In-only, 0.5 mol. % Nb-only, and 0.5-7 mol. % (Nb + In) co-doped TiO2 ceramics were synthesized by standard conventional solid-state reaction method. Microstructure studies showed that all samples were in pure rutile phase. The Nb and In ions were homogeneously distributed in the grain and grain boundary. Impedance spectroscopy and I-V behavior analysis demonstrated that the ceramics may compose of semiconducting grains and insulating grain boundaries. The high conductivity of grain was associated with the reduction of Ti4+ ions to Ti3+ ions, while the migration of oxygen vacancy may account for the conductivity of grain boundary. The effects of annealing treatment and bias filed on electrical properties were investigated for co-doped TiO2 ceramics, where the electric behaviors of samples were found to be susceptible to the annealing treatment and bias field. The internal-barrier-layer-capacitance mechanism was used to explain the CP phenomenon, the effect of annealing treatment and nonlinear I-V behavior for co-doped rutile TiO2 ceramics. Compared with CaCu3Ti4O12 ceramics, the high activation energy of co-doped rutile TiO2 (3.05 eV for grain boundary) was thought to be responsible for the low dielectric loss.

Lanthanide contraction effect on crystal structures, magnetic, and dielectric properties in ordered double perovskites LnPbCoSbO{sub 6} (Ln = La, Pr, Nd)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, L.; Yao, C. G.; Meng, J. L.

The crystal structures, magnetic, and dielectric properties for the ordered double perovskites LnPbCoSbO{sub 6} (Ln = La, Pr, Nd) have been investigated. The crystal structure has been solved by Rietveld refinements of X-ray diffraction data in the monoclinic space group P2{sub 1}/n (No. 14). The Co{sup 2+} and Sb{sup 5+} ions are almost fully ordered over the B-site, and the octahedral framework displays significant tilting distortion according to the Glazer's tilt system a{sup –}a{sup –}c{sup +}. As the result of lanthanide contraction from La{sup 3+} to Nd{sup 3+}, the B-site sublattice distortions become stronger accompanying with the reduction of themore » tolerance factor and coordination number. The magnetization measurements show an antiferromagnetic ordering with large effective magnetic moments (μ{sub eff}) suggesting that the orbital component is significant. The maximum values of isothermal magnetization increase with the decrease in radii of rare earth ions, which is attributed to the weakening of antiferromagnetic interaction via Co{sup 2+}–O–Sb{sup 5+}–O–Co{sup 2+} paths. The dielectric constants present frequency dependence and monotonically decrease with the ionic radii reduction from La{sup 3+} to Nd{sup 3+} due to the suppression of electron transfer. These results indicate that the magnetic and dielectric properties can be tuned by controlling the degree of lattice distortion, which is realized by introducing different Ln{sup 3+} ions at the A-site.« less

Cu-Induced Dielectric Breakdown of Porous Low-Dielectric-Constant Film

NASA Astrophysics Data System (ADS)

Cheng, Yi-Lung; Lee, Chih-Yen; Huang, Yao-Liang; Sun, Chung-Ren; Lee, Wen-Hsi; Chen, Giin-Shan; Fang, Jau-Shiung; Phan, Bach Thang

2017-06-01

Dielectric breakdown induced by Cu ion migration in porous low- k dielectric films has been investigated in alternating-polarity bias conditions using a metal-insulator-metal capacitor with Cu top metal electrode. The experimental results indicated that Cu ions migrated into the dielectric film under stress with positive polarity, leading to weaker dielectric strength and shorter time to failure (TTF). In the alternating-polarity test, the measured TTFs increased with decreasing stressing frequency, implying backward migration of Cu ions during reverse-bias stress. Additionally, compared with a direct-current stress condition, the measured TTFs were higher as the frequency was decreased to 10-2 Hz. The electric-field acceleration factor for porous low- k dielectric film breakdown in the alternating-polarity test was also found to increase. This Cu backward migration effect is effective when the stressing time under negative polarity is longer than 0.1 s.

Structural investigation of vanadium ions doped Li2Osbnd PbOsbnd B2O3sbnd P2O5 glasses by means of spectroscopic and dielectric studies

NASA Astrophysics Data System (ADS)

Yusub, S.; Narendrudu, T.; Suresh, S.; Krishna Rao, D.

2014-11-01

In the present investigation we report the synthesis of a series of transparent glasses of composition 20Li2Osbnd 20PbOsbnd 45B2O3sbnd (15-x) P2O5: xV2O5 with eight values of x ranging from 0 to 2.5 mol%, and their characterization. X-ray diffraction (XRD) spectra reflected the amorphous nature of the glasses. Optical absorption, electron paramagnetic resonance (EPR) spectra and FTIR study of vanadyl ions in the present glass network have been analyzed. The optical absorption and EPR investigations have revealed that vanadium ions do exist in both V4+ and V5+ states and the redox ratio (V4+/V5+) is observed to increase with the increase in concentration of V2O5. Dielectric properties viz., dielectric constant ε‧(ω), loss tan δ, electrical moduli M‧(ω), M″(ω), a.c. conductivity σac over an extensive scale of frequency and temperature have been investigated as a function of V2O5 concentration. The dispersion of dielectric constant ε‧(ω) with temperature has been interpreted by space charge polarization model. The dielectric loss and electrical moduli variation with frequency and temperature exhibited relaxation effects. These effects are ascribed to V4+ ions. The a.c. conductivity of the prepared glasses is perceived to escalate with the hike in V2O5 concentration whereas the activation energy for conduction exhibits a reverse trend. The conductivity mechanism is explained on the basis of polaronic transfer between V4+ and V5+ ions. The low temperature a.c. conductivity mechanism is elucidated by the quantum mechanical tunneling model. The growth in the values of dielectric parameters with raise in the concentration of V2O5 is due to V4+ ions which act as modifiers. The investigation of these results has indicated that at higher concentrations of V2O5, the VO2+ ions in the glasses were present in octahedral sites with tetragonal compression and belong to C4v symmetry.

Numerical investigation of narrowband infrared absorber and sensor based on dielectric-metal metasurface.

PubMed

Lu, Xiaoyuan; Zhang, Tongyi; Wan, Rengang; Xu, Yongtao; Zhao, Changhong; Guo, Sheng

2018-04-16

Metasurfaces are investigated intensively for biophotonics applications due to their resonant wavelength flexibly tuned in the near infrared region specially matching biological tissues. Here, we present numerically a metasurface structure combining dielectric resonance with surface plasmon mode of a metal plane, which is a perfect absorber with a narrow linewidth 10 nm wide and quality factor 120 in the near infrared regime. As a sensor, its bulk sensitivity and bulk figure of merit reach respectively 840 nm/RIU and 84/RIU, while its surface sensitivity and surface figure of merit are respectively 1 and 0.1/nm. For different types of adsorbate layers with the same thickness of 8 nm, its surface sensitivity and figure of merit are respectively 32.3 and 3.2/RIU. The enhanced electric field is concentrated on top of dielectric patch ends and in the patch ends simultaneously. Results show that the presented structure has high surface (and bulk) sensing capability in sensing applications due to its narrow linewidth and deep modulation depth. This could pave a new route toward dielectric-metal metasurface in biosensing applications, such as early disease detections and designs of neural stem cell sensing platforms.

Describing Temperature-Dependent Self-Diffusion Coefficients and Fluidity of 1- and 3-Alcohols with the Compensated Arrhenius Formalism.

PubMed

Fleshman, Allison M; Forsythe, Grant E; Petrowsky, Matt; Frech, Roger

2016-09-22

The location of the hydroxyl group in monohydroxy alcohols greatly affects the temperature dependence of the liquid structure due to hydrogen bonding. Temperature-dependent self-diffusion coefficients, fluidity (the inverse of viscosity), dielectric constant, and density have been measured for several 1-alcohols and 3-alcohols with varying alkyl chain lengths. The data are modeled using the compensated Arrhenius formalism (CAF). The CAF follows a modified transition state theory using an Arrhenius-like expression to describe the transport property, which consists of a Boltzmann factor containing an energy of activation, Ea, and an exponential prefactor containing the temperature-dependent solution dielectric constant, εs(T). Both 1- and 3-alcohols show the Ea of diffusion coefficients (approximately 43 kJ mol(-1)) is higher than the Ea of fluidity (approximately 35 kJ mol(-1)). The temperature dependence of the exponential prefactor in these associated liquids is explained using the dielectric constant and the Kirkwood-Frölich correlation factor, gk. It is argued that the dielectric constant must be used to account for the additional temperature dependence due to variations in the liquid structure (e.g., hydrogen bonding) for the CAF to accurately model the transport property.

Probing potential Li-ion battery electrolyte through first principles simulation of atomic clusters

NASA Astrophysics Data System (ADS)

Kushwaha, Anoop Kumar; Sahoo, Mihir Ranjan; Nayak, Saroj

2018-04-01

Li-ion battery has wide area of application starting from low power consumer electronics to high power electric vehicles. However, their large scale application in electric vehicles requires further improvement due to their low specific power density which is an essential parameter and is closely related to the working potential windows of the battery system. Several studies have found that these parameters can be taken care of by considering different cathode/anode materials and electrolytes. Recently, a unique approach has been reported on the basis of cluster size in which the use of Li3 cluster has been suggested as a potential component of the battery electrode material. The cluster based approach significantly enhances the working electrode potential up to 0.6V in the acetonitrile solvent. In the present work, using ab-initio quantum chemical calculation and the dielectric continuum model, we have investigated various dielectric solvent medium for the suitable electrolyte for the potential component Li3 cluster. This study suggests that high dielectric electrolytic solvent (ethylene carbonate and propylene carbonate) could be better for lithium cluster due to improvement in the total electrode potential in comparison to the other dielectric solvent.

Dielectric relaxation, resonance and scaling behaviors in Sr3Co2Fe24O41 hexaferrite

PubMed Central

Tang, Rujun; Jiang, Chen; Qian, Wenhu; Jian, Jie; Zhang, Xin; Wang, Haiyan; Yang, Hao

2015-01-01

The dielectric properties of Z-type hexaferrite Sr3Co2Fe24O41 (SCFO) have been investigated as a function of temperature from 153 to 503 K between 1 and 2 GHz. The dielectric responses of SCFO are found to be frequency dependent and thermally activated. The relaxation-type dielectric behavior is observed to be dominating in the low frequency region and resonance-type dielectric behavior is found to be dominating above 108 Hz. This frequency dependence of dielectric behavior is explained by the damped harmonic oscillator model with temperature dependent coefficients. The imaginary part of impedance (Z″) and modulus (M″) spectra show that there is a distribution of relaxation times. The scaling behaviors of Z″ and M″ spectra further suggest that the distribution of relaxation times is temperature independent at low frequencies. The dielectric loss spectra at different temperatures have not shown a scaling behavior above 108 Hz. A comparison between the Z″ and the M″ spectra indicates that the short-range charges motion dominates at low temperatures and the long-range charges motion dominates at high temperatures. The above results indicate that the dielectric dispersion mechanism in SCFO is temperature independent at low frequencies and temperature dependent at high frequencies due to the domination of resonance behavior. PMID:26314913

Optimization of shape control of a cantilever beam using dielectric elastomer actuators

NASA Astrophysics Data System (ADS)

Liu, Chong; Mao, Boyong; Huang, Gangting; Wu, Qichen; Xie, Shilin; Xu, Minglong

2018-05-01

Dielectric elastomer (DE) is a kind of smart soft material that has many advantages such as large deformation, fast response, lightweight and easy synthesis. These features make dielectric elastomer a suitable material for actuators. This article focuses on the shape control of a cantilever beam by using dielectric elastomer actuators. The shape control equation in finite element formulation of the cantilever beam partially covered with dielectric elastomer actuators is derived based on the constitutive equation of dielectric elastomer material by using Hamilton principle. The actuating forces produced by dielectric elastomer actuators depend on the number of layers, the position and the actuation voltage of dielectric elastomer actuators. First, effects of these factors on the shape control accuracy when one pair or multiple pairs of actuators are employed are simulated, respectively. The simulation results demonstrate that increasing the number of actuators or the number of layers can improve the control effect and reduce the actuation voltages effectively. Second, to achieve the optimal shape control effect, the position of the actuators and the drive voltages are all determined using a genetic algorithm. The robustness of the genetic algorithm is analyzed. Moreover, the implications of using one pair and multiple pairs of actuators to drive the cantilever beam to the expected shape are investigated. The results demonstrate that a small number of actuators with optimal placement and optimal voltage values can achieve the shape control of the beam effectively. Finally, a preliminary experimental verification of the control effect is carried out, which shows the correctness of the theoretical method.

PVDF-based copolymers, terpolymers and their multi-component material systems for capacitor applications

NASA Astrophysics Data System (ADS)

Chu, Baojin

Miniature of power electronics, scaling-down of microelectronics and other electrical and electronic systems, and development of many technologies (such as hybrid vehicles or implantable heart defibrillators) require capacitors with high energy density to improve the weight and volume efficiency of the whole system. Various capacitor technologies are investigated to meet the requirements of developing future technologies. Among these technologies, polymer film capacitor technology is one of the most promising. Besides high energy density, polymer-based capacitors possess the merits of high power density, low loss, high reliability (self-healing), easy processing, and feasibility (in size, shape and energy level). Due to the ferroelectricity of polyvinylidene fluoride (PVDF)-based polymers, they exhibit much higher polarization response under an electric field, in comparison with other linear dielectric polymers for capacitor applications. The maximum polarization level of PVDF-based polymers can be as high as 0.1 C/m2 and the breakdown field can be higher than 600 MV/m. An estimated energy density of around 30 J/cm3 can be expected in this class of materials. However, this value is much higher than the energy density that can be achieved in the PVDF homopolymer and the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymers due to the polarization hysteresis in these polymers. Therefore, in this thesis, PVDF-based polymer materials were investigated and developed to approach this expected energy density by various strategies. An energy density of higher than 24 J/cm 3, which is close to the predicted value, was found in PVDF-based copolymers. Recently, the poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) terpolymer was developed in Prof. Qiming Zhang's group. Previous works have shown that incorporation of CTE into P(VDF-TrFE) copolymers, in which bulky CFE acts as a defect, could convert the copolymer into relaxor ferroelectrics. P(VDF-TrFE-CFE) terpolymers possess a high dielectric constant (larger than 50 at 1 kHz) at room temperature and excellent electromechanical properties. Here, the P(VDF-TrFE-CFE) terpolymers were studied as dielectric materials for capacitor applications. The electrical, thermal and microstructure characterizations were performed on the terpolymers. The terpolymers exhibit a high breakdown field (higher than 400 MV/m) and energy density (larger than 9 J/cm 3). The energy discharge characteristics of the terpolymer were studied by directly discharging the stored energy in the terpolymers to a load resistor. Due to the highly field-dependent nonlinear and frequency dependent dielectric response of the terpolymers, the discharge energy density and equivalent series resistance strongly depend on the load resistor and discharge speed. This study found that for high energy density dielectric materials, a very high dielectric constant might not be an advantage. In the case of terpolymers, this leads to early polarization saturation, i.e., polarization response saturates under an electric field much lower than the breakdown field and causes lower than expected energy density. Due to the dielectric nonlinearity and early saturation of polarization, the energy density of the terpolymers increases linearly with the applied electric fields. It was also found that the polymer-metal interface played an important role for conduction and the breakdown field in the terpolymers, which was related to the charge injection from the metal to the polymer. Due to highly nonlinear dielectric behavior and early polarization saturation in the terpolymers, it was proposed that a high dielectric constant might not be desirable to obtain high energy density. Poly(vinylidene fluoride-chlorotrifluoroethylene) (P(VDFCTFE), 10, 15 and 20 wt% CTFE) and Poly(vinylidene fluoride-hexafluoropropylene) (P(VDF-HFP), 10 and 12 wt% HFP) copolymers, which possess a much lower dielectric constant (about 12 at 1 kHz at room temperature), were further investigated for dielectric materials of high energy density. Due to the lower dielectric constant, the early polarization saturation was avoided and these polymers showed a very high breakdown field and energy density. For the P(VDF-CTFE) copolymer with 15 wt% CTFE, an energy density of higher than 24 J/cm 3 at an electric field higher than 650 MV/m could be obtained. Based on thermal and microstructure studies, the high energy density was found to be caused by the structural modification of PVDF by bulky CTFE or HFP, which also act as defects, similar to the terpolymers. The discharge behavior of the copolymers mainly relies on the load resistors, suggesting that the copolymers have lower equivalent series resistance. Multi-component material system based on current available materials was found to be a useful strategy to tailor and improve the performance of dielectric materials. Nanocomposites composed of the P(VDF-TrFE-CFE) terpolymers and ZrO2 or TiO2 nanoparticles were found to greatly enhance the polarization response and energy density of terpolymers (from 9 J/cm3 to 10.5 J/cm3). Based on comprehensive thermal, dielectric and microstructure studies, the enhancement was believed to be related to the large amount of interfaces in the nanocomposites. In the interfaces, the chain mobility is increased and the energy barrier between the polar and nonpolar phases is reduced, resulting in higher polarization response and energy density at a reduced electric field. The P(VDF-TrFE-CFE) terpolymer/P(VDF-CTFE) copolymer and the P(VDFTrFE-CFE) terpolymer/PMMA blends were also studied. It was found that the P(VDFTrFE-CFE) terpolymers could not be completely miscible with the P(VDF-CTFE) copolymer. In the P(VDF-TrFE-CFE) terpolymer/P(VDF-CTFE) copolymer blends, with a small amount of the copolymer (5 and 10 wt%) in the terpolymer, enhancement of the polarization response similar to that observed in the terpolymer/ZrO 2 nanocomposites was observed. This enhancement was also thought to be mainly caused by the interface effect. The breakdown field of blends was also greatly improved, which resulted in a significant improvement in energy density (from 9 J/cm3 to 11.5 J/cm3). The P(VDF-TrFE-CFE) terpolymers are miscible with PMMA. Addition of PMMA was found to reduce the dielectric response of blends, but also to improve the breakdown field due to the improvement of mechanical properties. The optimum composition of the blends is around 2.5 wt% PMMA. With this composition, the breakdown field of the blends can be improved without reduction of energy density.

Polymer chain collapse induced by many-body dipole correlations.

PubMed

Budkov, Yu A; Kalikin, N N; Kolesnikov, A L

2017-04-01

We present a simple analytical theory of a flexible polymer chain dissolved in a good solvent, carrying permanent freely oriented dipoles on the monomers. We take into account the dipole correlations within the random phase approximation (RPA), as well as a dielectric heterogeneity in the internal polymer volume relative to the bulk solution. We demonstrate that the dipole correlations of monomers can be taken into account as pairwise ones only when the polymer chain is in a coil conformation. In this case the dipole correlations manifest themselves through the Keesom interactions of the permanent dipoles. On the other hand, the dielectric heterogeneity effect (dielectric mismatch effect) leads to the effective interaction between the monomers of the polymeric coil. Both of these effects can be taken into account by renormalizing the second virial coefficient of the monomer-monomer volume interactions. We establish that in the case when the solvent dielectric permittivity exceeds the dielectric permittivity of the polymeric material, the dielectric mismatch effect competes with the dipole attractive interactions, leading to polymer coil expansion. In the opposite case, both the dielectric mismatch effect and the dipole attractive interaction lead to the polymer coil collapse. We analyse the coil-globule transition caused by the dipole correlations of monomers within the many-body theory. We demonstrate that accounting for the dipole correlations higher than the pairwise ones smooths this pure electrostatics driven coil-globule transition of the polymer chain.

Interference patterns of a horizontal electric dipole over layered dielectric media.

NASA Technical Reports Server (NTRS)

Tsang, L.; Kong, J. A.; Simmons, G.

1973-01-01

Interference patterns for electromagnetic fields due to a subsurface reflector below a layered lossy dielectric are calculated with the geometrical optics approximation for use in interpreting data to be collected on the moon by Apollo 17 as well as data currently being obtained on terrestrial glaciers. The radiating antenna lies on the surface. All six field components are calculated and studied. For the endfire solutions, the peak of the first reflected wave is found to be different from that of the broadside ones. To facilitate a physical discussion, we plotted the radiation patterns due to the antenna on the surface.

Low temperature magneto-dielectric measurements on BiFeO{sub 3} lightly substituted by cobalt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ray, J.; Biswal, A. K.; Vishwakarma, P. N., E-mail: prakashn@nitrkl.ac.in, E-mail: pnviisc@gmail.com

2015-04-07

Dielectric and magnetodielectric measurements are done on BiFe{sub 1−x}Co{sub x}O{sub 3}: x = 0, 0.01, and 0.02 in the temperature range 70–300 K and up to magnetic field 1.3 T. The dielectric data are well described by Haverliak–Negami expression plus an additional term for the Maxwell Wagner (MW) type relaxations, whose contribution is dominant near room temperature. The parameters obtained from the fitting of data using the above mentioned expression, suggest slowing down of relaxation and approach towards ideal Debye type relaxations, as the temperature is lowered. The dielectric relaxations obey polaronic variable range hopping model with distinct activation energies (E{sub a}) in themore » extrinsic (6.67T{sup 3/4 }meV) and intrinsic (2.88T{sup 3/4 }meV) regions for the parent sample (x = 0), and thus a distinct transition from extrinsic to intrinsic behavior is seen at 215 K while lowering the temperature. This distinct transition is missing for Co substituted samples probably due to the extrinsic region values of E{sub a} (3.42T{sup 3/4 }meV and 2.42T{sup 3/4 }meV for x = 0.01 and 0.02, respectively) comparable to that of the intrinsic region (see x = 0). The magnetodielectric measurement shows positive magnetodielectricity (MD) in the intrinsic region (T < 215 K for x = 0) and negative MD in the extrinsic region (T > 215 K for x = 0). The extrinsic region is found to be dominated by MW and magnetoresistance effects, whereas MD in intrinsic regions is due to the spin reorientation transitions. The Co substitution is found to increase the extrinsic and non-Debye contributions to dielectricity, which becomes so large that no spin reorientation transitions are seen in x = 0.02 sample. The pyroelectric active region in x = 0 is found to be dominated by the diffusive behavior having contribution of the form ω{sup −0.5}.« less

Characterization of the effective electrostriction coefficients in ferroelectric thin films

NASA Astrophysics Data System (ADS)

Kholkin, A. L.; Akdogan, E. K.; Safari, A.; Chauvy, P.-F.; Setter, N.

2001-06-01

Electromechanical properties of a number of ferroelectric films including PbZrxTi1-xO3(PZT), 0.9PbMg1/3Nb2/3O3-0.1PbTiO3(PMN-PT), and SrBi2Ta2O9(SBT) are investigated using laser interferometry combined with conventional dielectric measurements. Effective electrostriction coefficients of the films, Qeff, are determined using a linearized electrostriction equation that couples longitudinal piezoelectric coefficient, d33, with the polarization and dielectric constant. It is shown that, in PZT films, electrostriction coefficients slightly increase with applied electric field, reflecting the weak contribution of non-180° domains to piezoelectric properties. In contrast, in PMN-PT and SBT films electrostriction coefficients are field independent, indicating the intrinsic nature of the piezoelectric response. The experimental values of Qeff are significantly smaller than those of corresponding bulk materials due to substrate clamping and possible size effects. Electrostriction coefficients of PZT layers are shown to depend strongly on the composition and preferred orientation of the grains. In particular, Qeff of (100) textured rhombohedral films (x=0.7) is significantly greater than that of (111) layers. Thus large anisotropy of the electrostrictive coefficients is responsible for recently observed large piezoelectric coefficients of (100) textured PZT films. Effective electrostriction coefficients obtained by laser interferometry allow evaluation of the electromechanical properties of ferroelectric films based solely on the dielectric parameters and thus are very useful in the design and fabrication of microsensors and microactuators.

Characterization of surface dielectric barrier discharge influenced by intermediate frequency for ozone production

NASA Astrophysics Data System (ADS)

Abdelaziz, Ayman A.; Ishijima, Tatsuo; Seto, Takafumi; Osawa, Naoki; Wedaa, Hassan; Otani, Yoshio

2016-06-01

The aim of this study is to investigate the effect of the intermediate frequency (1-10 kHz) of the sinusoidal driving voltage on the characteristics of a developed surface dielectric barrier discharge (SDBD)-based reactor having spikes on its discharge electrode. Moreover, its influence on the production of ozone and nitrogen oxide byproducts is evaluated. The results show that SDBD is operated in the filamentary mode at all the frequencies. Nevertheless, the pulses of the discharge current at high frequencies are much denser and have higher amplitudes than those at low frequencies. The analysis of the power consumed in the reactor shows that a small portion of the input power is dissipated in the dielectric material of SDBD source, whereas the major part of the power is consumed in the plasma discharge. The results of the ozone production show that higher frequencies have a slightly adverse effect on the ozone production at relatively high energy density values, where the ozone concentration is slightly decreased when the frequency is increased at the same energy density. The temperature of the discharge channels and gas is not a crucial factor for the decomposition of ozone in this reactor, while the results of the measurements of nitrogen oxides characteristics indicate that the formation of NO and NO2 has a significant adverse effect on the production efficiency of ozone due to their oxidation to another nitrogen oxides and their catalytic effect.

Effects of synthesis techniques on chemical composition, microstructure and dielectric properties of Mg-doped calcium titanate

NASA Astrophysics Data System (ADS)

Jongprateep, Oratai; Sato, Nicha

2018-04-01

Calcium titanate (CaTiO3) has been recognized as a material for fabrication of dielectric components, owing to its moderate dielectric constant and excellent microwave response. Enhancement of dielectric properties of the material can be achieved through doping, compositional and microstructural control. This study, therefore, aimed at investigating effects of powder synthesis techniques on compositions, microstructure, and dielectric properties of Mg-doped CaTiO3. Solution combustion and solid-state reaction were powder synthesis techniques employed in preparation of undoped CaTiO3 and CaTiO3 doped with 5-20 at% Mg. Compositional analysis revealed that powder synthesis techniques did not exhibit a significant effect on formation of secondary phases. When Mg concentration did not exceed 5 at%, the powders prepared by both techniques contained only a single phase. An increase of MgO secondary phase was observed as Mg concentrations increased from 10 to 20 at%. Experimental results, on the contrary, revealed that powder synthesis techniques contributed to significant differences in microstructure. Solution combustion technique produced powders with finer particle sizes, which consequently led to finer grain sizes and density enhancement. High-density specimens with fine microstructure generally exhibit improved dielectric properties. Dielectric measurements revealed that dielectric constants of all samples ranged between 231 and 327 at 1 MHz, and that superior dielectric constants were observed in samples prepared by the solution combustion technique.

Monoclinic Cc-phase stabilization in magnetically diluted lead free Na1/2Bi1/2TiO3—Evolution of spin glass like behavior with enhanced ferroelectric and dielectric properties

NASA Astrophysics Data System (ADS)

Thangavelu, Karthik; Asthana, Saket

2015-09-01

The effect of magnetic cation substitution on the phase stabilization, ferroelectric, dielectric and magnetic properties of a lead free Na0.5Bi0.5TiO3 (NBT) system prepared by O2 atmosphere solid state sintering were studied extensively. Cobalt (Co) was chosen as the magnetic cation to substitute at the Ti-site of NBT with optimized 2.5 mol%. Rietveld analysis of x-ray diffraction data favours the monoclinic Cc phase stabilization strongly rather than the parent R3c phase. FE-SEM micrograph supports the single phase characteristics without phase segregation at the grain boundaries. The stabilized Cc space group was explained based on the collective local distortion effects due to spin-orbit stabilization at Co3+ and Co2+ functional centres. The phonon mode changes as observed in the TiO6 octahedral modes also support the Cc phase stabilization. The major Co3+-ion presence was revealed from corresponding crystal field transitions observed through solid state diffuse reflectance spectroscopy. The enhanced spontaneous polarization (Ps) from ≅38 μC cm-2 to 45 μC cm-2 could be due to the easy rotation of polarization vector along the {(1\\bar{1}0)}{{pc}} in Cc phase. An increase in static dielectric response (ɛ) from ɛ ≅ 42 to 60 along with enhanced diffusivity from γ ≅ 1.53 to 1.75 was observed. Magneto-thermal irreversibility and their magnetic field dependent ZFC/FC curves suggest the possibility of a spin glass like behaviour below 50 K. The monoclinic Cc phase stabilization as confirmed from structural studies was well correlated with the observed ferroic properties in magnetically diluted NBT.

Biofilm monitoring using complex permittivity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Altman, Susan Jeanne; McGrath, Lucas K.; Dolan, Patricia L.

2008-10-01

There is strong interest in the detection and monitoring of bio-fouling. Bio-fouling problems are common in numerous water treatments systems, medical and dental apparatus and food processing equipment. Current bio-fouling control protocols are time consuming and costly. New early detection techniques to monitor bio-forming contaminates are means to enhanced efficiency. Understanding the unique dielectric properties of biofilm development, colony forming bacteria and nutrient background will provide a basis to the effectiveness of controlling or preventing biofilm growth. Dielectric spectroscopy measurements provide values of complex permittivity, {var_epsilon}*, of biofilm formation by applying a weak alternating electric field at various frequencies. Themore » dielectric characteristic of the biofilm, {var_epsilon}{prime}, is the real component of {var_epsilon}* and measures the biofilm's unique ability to store energy. Graphically observed dependencies of {var_epsilon}{prime} to frequency indicate dielectric relaxation or dielectric dispersion behaviors that mark the particular stage of progression during the development of biofilms. In contrast, any frequency dependency of the imaginary component, {var_epsilon}{double_prime} the loss factor, is expressed as dielectric losses from the biofilm due to dipole relaxation. The tangent angle of these two component vectors is the ratio of the imaginary component to the real component, {var_epsilon}{double_prime}/{var_epsilon}{prime} and is referred to as the loss angle tangent (tan {delta}) or dielectric loss. Changes in tan {delta} are characteristic of changes in dielectric losses during various developmental stages of the films. Permittivity scans in the above figure are of biofilm growth from P. Fluorescens (10e7 CFU's at the start). Three trends are apparent from these scans, the first being a small drop in the imaginary permittivity over a 7 hours period, best seen in the Cole-Cole plot (a). The second trend is observed two hours after inoculation when the permittivity begins to increase slightly over the next 20 hours, best seen in the shift from 1000 Hz to 5000 Hz in tan {delta} at the high frequencies (c). Because of similar dielectric relaxation properties noted by the comparable size of the semicircles, plot (a), and the height of tan {delta}, plot (c), within the first 29 hours, cell activity levels did not appreciably change. The third trend is observed when the complex permittivity value drops by orders of magnitude between 29 hours and 37 hours, best seen in the log [E] plot (b), and in the drop of the dielectric loss, tan {delta}, to 0. This change in the dielectric properties in the bio environment is nearly independent of all frequencies (c) and dissimilar from the original condition when only bacteria and nutrient was present in the biofilm chambers. The semicircles in plot (a) for this period decreased below the resolution of the graph, implying a large difference in the dielectric behavior of the cells/biofilms consisting of low dielectric losses. We believe these large changes are related to the on-set of biofilms.« less

Numerical investigation of dielectric barrier discharges

NASA Astrophysics Data System (ADS)

Li, Jing

1997-12-01

A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in further understanding the ozone generation and pollution control process in a dielectric barrier discharge.

Cascaded plasmon-plasmon coupling mediated energy transfer across stratified metal-dielectric nanostructures

PubMed Central

Golmakaniyoon, Sepideh; Hernandez-Martinez, Pedro Ludwig; Demir, Hilmi Volkan; Sun, Xiao Wei

2016-01-01

Surface plasmon (SP) coupling has been successfully applied to nonradiative energy transfer via exciton-plasmon-exciton coupling in conventionally sandwiched donor-metal film-acceptor configurations. However, these structures lack the desired efficiency and suffer poor photoemission due to the high energy loss. Here, we show that the cascaded exciton-plasmon-plasmon-exciton coupling in stratified architecture enables an efficient energy transfer mechanism. The overlaps of the surface plasmon modes at the metal-dielectric and dielectric-metal interfaces allow for strong cross-coupling in comparison with the single metal film configuration. The proposed architecture has been demonstrated through the analytical modeling and numerical simulation of an oscillating dipole near the stratified nanostructure of metal-dielectric-metal-acceptor. Consistent with theoretical and numerical results, experimental measurements confirm at least 50% plasmon resonance energy transfer enhancement in the donor-metal-dielectric-metal-acceptor compared to the donor-metal-acceptor structure. Cascaded plasmon-plasmon coupling enables record high efficiency for exciton transfer through metallic structures. PMID:27698422

Multiferroics BiMn1-xAlxO3 nanoparticles: Synthesis, characterization and evaluation of various structural, physical, electrical and dielectric parameters

NASA Astrophysics Data System (ADS)

Ahmad, Bashir; Raissat, Rabia; Mumtaz, Saleem; Ahmad, Zahoor; Sadiq, Imran; Ashiq, Muhammad Naeem; Najam-ul-Haq, Muhammad

2017-07-01

The aluminium substituted bismuth based manganates with nominal composition BiMn1-xAlxO3 (x = 0.0, 0.2, 0.4, 0.6 and 0.8) were prepared by the simple microemulsion method. The alteration in their structural, electrical and dielectric parameters due to Al substitution has been investigated. The X-ray diffraction analysis (XRD) confirms the formation of single phase orthorhombic with crystallite size ranges from 32 to 52 nm. The morphological features and particle size were determined by using scanning electron microscopy (SEM). The dc electrical resistivity increased from 6 × 108 to 8 × 109 Ω cm with the increase in substituent concentration. The dielectric constant, dielectric loss tangent and dielectric loss factor decreased with the increase in frequency. The increase in electrical resistivity makes the synthesized materials paramount over other materials and can be useful for technological applications in microwave devices.

Frequency-dependent dielectric contribution of flexoelectricity allowing control of state switching in helicoidal liquid crystals

NASA Astrophysics Data System (ADS)

Outram, B. I.; Elston, S. J.

2013-07-01

The contribution of flexoelectric polarization to the dielectric susceptibility in helicoidal liquid crystals is formulated for the static equilibrium case, and further in the case of a time-varying field. A dispersion of the dielectric permittivity due to the frequency response of flexoelectric switching is described. The special case of a negative dielectric-anisotropy nematic material is considered and experimentally shown to agree with the analytical theory. It is further demonstrated how relaxation of the flexoelectric contribution to the dielectric tensor in this special case can be exploited to switch between states in cholesteric liquid crystal structures by altering the applied time-dependent field amplitude, if Δɛ<0 and (e1-e3)2/(K1+K3)>-Δɛɛ0. Consequentially, a versatile mechanism for driving between states in liquid crystal systems has been demonstrated and its implications for technology are suggested, and include dual-mode, bistable, and transflective displays.

Molecular Dynamics Evaluation of Dielectric-Constant Mixing Rules for H2O-CO2 at Geologic Conditions

PubMed Central

Mountain, Raymond D.; Harvey, Allan H.

2015-01-01

Modeling of mineral reaction equilibria and aqueous-phase speciation of C-O-H fluids requires the dielectric constant of the fluid mixture, which is not known from experiment and is typically estimated by some rule for mixing pure-component values. In order to evaluate different proposed mixing rules, we use molecular dynamics simulation to calculate the dielectric constant of a model H2O–CO2 mixture at temperatures of 700 K and 1000 K at pressures up to 3 GPa. We find that theoretically based mixing rules that depend on combining the molar polarizations of the pure fluids systematically overestimate the dielectric constant of the mixture, as would be expected for mixtures of nonpolar and strongly polar components. The commonly used semiempirical mixing rule due to Looyenga works well for this system at the lower pressures studied, but somewhat underestimates the dielectric constant at higher pressures and densities, especially at the water-rich end of the composition range. PMID:26664009

Molecular Dynamics Evaluation of Dielectric-Constant Mixing Rules for H2O-CO2 at Geologic Conditions.

PubMed

Mountain, Raymond D; Harvey, Allan H

2015-10-01

Modeling of mineral reaction equilibria and aqueous-phase speciation of C-O-H fluids requires the dielectric constant of the fluid mixture, which is not known from experiment and is typically estimated by some rule for mixing pure-component values. In order to evaluate different proposed mixing rules, we use molecular dynamics simulation to calculate the dielectric constant of a model H 2 O-CO 2 mixture at temperatures of 700 K and 1000 K at pressures up to 3 GPa. We find that theoretically based mixing rules that depend on combining the molar polarizations of the pure fluids systematically overestimate the dielectric constant of the mixture, as would be expected for mixtures of nonpolar and strongly polar components. The commonly used semiempirical mixing rule due to Looyenga works well for this system at the lower pressures studied, but somewhat underestimates the dielectric constant at higher pressures and densities, especially at the water-rich end of the composition range.

Dielectric constant extraction of graphene nanostructured on SiC substrates from spectroscopy ellipsometry measurement using Gauss–Newton inversion method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maulina, Hervin; Santoso, Iman, E-mail: iman.santoso@ugm.ac.id; Subama, Emmistasega

2016-04-19

The extraction of the dielectric constant of nanostructured graphene on SiC substrates from spectroscopy ellipsometry measurement using the Gauss-Newton inversion (GNI) method has been done. This study aims to calculate the dielectric constant and refractive index of graphene by extracting the value of ψ and Δ from the spectroscopy ellipsometry measurement using GNI method and comparing them with previous result which was extracted using Drude-Lorentz (DL) model. The results show that GNI method can be used to calculate the dielectric constant and refractive index of nanostructured graphene on SiC substratesmore faster as compared to DL model. Moreover, the imaginary partmore » of the dielectric constant values and coefficient of extinction drastically increases at 4.5 eV similar to that of extracted using known DL fitting. The increase is known due to the process of interband transition and the interaction between the electrons and electron-hole at M-points in the Brillouin zone of graphene.« less

Investigation of the dielectric recovery in synthetic air in a high voltage circuit breaker

NASA Astrophysics Data System (ADS)

Seeger, M.; Naidis, G.; Steffens, A.; Nordborg, H.; Claessens, M.

2005-06-01

The dielectric recovery of an axially blown arc in an experimental set-up based on a conventional HV circuit breaker was investigated both experimentally and theoretically. As a quenching gas, synthetic air was used. The investigated time range was from 10 µs to 10 ms after current zero (CZ). A fast rise in the dielectric strength during the first 100 µs, followed by a plateau and further rise later was observed. The dependences on the breaking current and pressure were determined. The measured dielectric recovery during the first 100 µs after CZ could be reproduced with good accuracy by computational fluid dynamics simulations. From that it could be deduced that the temperature decay in the axis does not depend sensitively on the pressure. The dielectric recovery during the first 100 µs scales therefore mainly with the filling pressure. The plateau in the breakdown characteristic is due to a hot vapour layer from the still evaporating PTFE nozzle surface.

All-dielectric metamaterial frequency selective surface

NASA Astrophysics Data System (ADS)

Wang, Jun; Qu, Shaobo; Li, Liyang; Wang, Jiafu; Feng, Mingde; Ma, Hua; Du, Hongliang; Xu, Zhuo

Frequency selective surface (FSS) has been extensively studied due to its potential applications in radomes, antenna reflectors, high-impedance surfaces and absorbers. Recently, a new principle of designing FSS has been proposed and mainly studied in two levels. In the level of materials, dielectric materials instead of metallic patterns are capable of achieving more functional performance in FSS design. Moreover, FSSs made of dielectric materials can be used in different extreme environments, depending on their electrical, thermal or mechanical properties. In the level of design principle, the theory of metamaterial can be used to design FSS in a convenient and concise way. In this review paper, we provide a brief summary about the recent progress in all-dielectric metamaterial frequency selective surface (ADM-FSS). The basic principle of designing ADM-FSS is summarized. As significant tools, Mie theory and dielectric resonator (DR) theory are given which illustrate clearly how they are used in the FSS design. Then, several design cases including dielectric particle-based ADM-FSS and dielectric network-based ADM-FSS are introduced and reviewed. After a discussion of these two types of ADM-FSSs, we reviewed the existing fabrication techniques that are used in building the experiment samples. Finally, issues and challenges regarding the rapid fabrication techniques and further development aspects are discussed.

Dielectric spectroscopy of Dy2O3 doped (K0.5Na0.5)NbO3 piezoelectric ceramics

NASA Astrophysics Data System (ADS)

Mahesh, P.; Subhash, T.; Pamu, D.

2014-06-01

We report the dielectric properties of ( K 0.5 Na 0.5 ) NbO 3 ceramics doped with x wt% of Dy 2 O 3 (x= 0.0-1.5 wt%) using the broadband dielectric spectroscopy. The X-ray diffraction studies showed the formation of perovskite structure signifying that Dy 2 O 3 diffuse into the KNN lattice. Samples doped with x > 0.5 wt% exhibit smaller grain size and lower relative densities. The dielectric properties of KNN ceramics doped with Dy 2 O 3 are enhanced by increasing the Dy 3+ content; among the compositions studied, x = 0.5 wt% exhibited the highest dielectric constant and lowest loss at 1MHz over the temperature range of 30°C to 400°C. All the samples exhibit maximum dielectric constant at the Curie temperature (˜ 326°C) and a small peak in the dielectric constant at around 165°C is due to a structural phase transition. At the request of all authors, and by agreement with the Proceedings Editors, a corrected version of this article was published on 19 June 2014. The full text of the Corrigendum is attached to the corrected article PDF file.

Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction

NASA Astrophysics Data System (ADS)

Fong, S. W.; Sood, A.; Chen, L.; Kumari, N.; Asheghi, M.; Goodson, K. E.; Gibson, G. A.; Wong, H.-S. P.

2016-07-01

In this work, we investigate the temperature-dependent thermal conductivities of few nanometer thick alternating stacks of amorphous dielectrics, specifically SiO2/Al2O3 and SiO2/Si3N4. Experiments using steady-state Joule-heating and electrical thermometry, while using a micro-miniature refrigerator over a wide temperature range (100-500 K), show that amorphous thin-film multilayer SiO2/Si3N4 and SiO2/Al2O3 exhibit through-plane room temperature effective thermal conductivities of about 1.14 and 0.48 W/(m × K), respectively. In the case of SiO2/Al2O3, the reduced conductivity is attributed to lowered film density (7.03 → 5.44 × 1028 m-3 for SiO2 and 10.2 → 8.27 × 1028 m-3 for Al2O3) caused by atomic layer deposition of thin-films as well as a small, finite, and repeating thermal boundary resistance (TBR) of 1.5 m2 K/GW between dielectric layers. Molecular dynamics simulations reveal that vibrational mismatch between amorphous oxide layers is small, and that the TBR between layers is largely due to imperfect interfaces. Finally, the impact of using this multilayer dielectric in a dash-type phase-change memory device is studied using finite-element simulations.

Tunable dielectric properties of Barium Magnesium Niobate (BMN) doped Barium Strontium Titanate (BST) thin films by magnetron sputtering

NASA Astrophysics Data System (ADS)

Alema, Fikadu; Reinholz, Aaron; Pokhodnya, Konstantin

2013-03-01

We report on the tunable dielectric properties of Mg and Nb co-doped Ba0.45Sr0.55TiO3 (BST) thin film prepared by the magnetron sputtering using BST target (pure and doped with BaMg0.33Nb0.67O3 (BMN)) on Pt/TiO2/SiO2/Al2O3 4'' wafers at 700 °C under oxygen atmosphere. The electrical measurements are conducted on 2432 metal-ferroelectric-metal capacitors using Pt as the top and bottom electrode. The crystalline structure, microstructure, and surface morphology of the films are analyzed and correlated to the films dielectric properties. The BMN doped and undoped BST films have shown tunabilities of 48% and 52%; and leakage current densities of 2.2x10-6 A/cm2 and 3.7x10-5 A/cm2, respectively at 0.5 MV/cm bias field. The results indicate that the BMN doped film exhibits a lower leakage current with no significant decrease in tunability. Due to similar electronegativity and ionic radii, it was suggested that both Mg2+ (accepter-type) and Nb5+ (donor-type) dopants substitutTi4+ ion in BST. The improvement in the film dielectric losses and leakage current with insignificant loss of tunability is attributed to the adversary effects of Mg2+ and Nb5+ in BST.

Gate bias stress in pentacene field-effect-transistors: Charge trapping in the dielectric or semiconductor

NASA Astrophysics Data System (ADS)

Häusermann, R.; Batlogg, B.

2011-08-01

Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trapping. We study the role of the dielectric and the semiconductor separately by producing OFETs with the same semiconductor (pentacene) combined with different dielectrics (SiO2 and Cytop). We show that it is possible to fabricate devices which are immune to gate bias stress. For other material combinations, charge trapping occurs in the semiconductor alone or in the dielectric.

Temperature Effects of Dielectric Properties of ER Fluids

NASA Astrophysics Data System (ADS)

Qiu, Z. Y.; Hu, L.; Liu, M. W.; Bao, H. X.; Jiang, Y. G.; Zhou, L. W.; Tang, Y.; Gao, Z.; Sun, M.; Korobko, E. V.

Under the consideration of the role that energy transfer and dissipation play in ER effect, an improved theory frame for ER effects, polarization-dissipation-structure-rheology, is suggested. The theory frame is substantiated by the basic physical laws and certain critical experimental facts. The dielectric response of a diatomite ER fluid to temperature is measured in the temperature range of 140 K to 400 K. By comparison of the DC conductivity with the AC effective conductivity of the sample, we found that the AC dielectric loss consists of two parts. One part comes from the DC conductivity, the other from the response of the bound charges in scope of particle to AC field. It is suggested that the response of bound charges is very important to ER effects. Besides, the effect of temperature on shear stress is measured, and interpreted based on the dielectric measurements. The source of two loss peaks in the curve of the dielectric loss versus temperature is not clear.

The origin of excellent gate-bias stress stability in organic field-effect transistors employing fluorinated-polymer gate dielectrics.

PubMed

Kim, Jiye; Jang, Jaeyoung; Kim, Kyunghun; Kim, Haekyoung; Kim, Se Hyun; Park, Chan Eon

2014-11-12

Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field-effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate-bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Performance of dielectric nanocomposites: matrix-free, hairy nanoparticle assemblies and amorphous polymer-nanoparticle blends.

PubMed

Grabowski, Christopher A; Koerner, Hilmar; Meth, Jeffrey S; Dang, Alei; Hui, Chin Ming; Matyjaszewski, Krzysztof; Bockstaller, Michael R; Durstock, Michael F; Vaia, Richard A

2014-12-10

Demands to increase the stored energy density of electrostatic capacitors have spurred the development of materials with enhanced dielectric breakdown, improved permittivity, and reduced dielectric loss. Polymer nanocomposites (PNCs), consisting of a blend of amorphous polymer and dielectric nanofillers, have been studied intensely to satisfy these goals; however, nanoparticle aggregates, field localization due to dielectric mismatch between particle and matrix, and the poorly understood role of interface compatibilization have challenged progress. To expand the understanding of the inter-relation between these factors and, thus, enable rational optimization of low and high contrast PNC dielectrics, we compare the dielectric performance of matrix-free hairy nanoparticle assemblies (aHNPs) to blended PNCs in the regime of low dielectric contrast to establish how morphology and interface impact energy storage and breakdown across different polymer matrices (polystyrene, PS, and poly(methyl methacrylate), PMMA) and nanoparticle loadings (0-50% (v/v) silica). The findings indicate that the route (aHNP versus blending) to well-dispersed morphology has, at most, a minor impact on breakdown strength trends with nanoparticle volume fraction; the only exception being at intermediate loadings of silica in PMMA (15% (v/v)). Conversely, aHNPs show substantial improvements in reducing dielectric loss and maintaining charge/discharge efficiency. For example, low-frequency dielectric loss (1 Hz-1 kHz) of PS and PMMA aHNP films was essentially unchanged up to a silica content of 50% (v/v), whereas traditional blends showed a monotonically increasing loss with silica loading. Similar benefits are seen via high-field polarization loop measurements where energy storage for ∼15% (v/v) silica loaded PMMA and PS aHNPs were 50% and 200% greater than respective comparable PNC blends. Overall, these findings on low dielectric contrast PNCs clearly point to the performance benefits of functionalizing the nanoparticle surface with high-molecular-weight polymers for polymer nanostructured dielectrics.

Strong coupling electrostatics for randomly charged surfaces: antifragility and effective interactions.

PubMed

Ghodrat, Malihe; Naji, Ali; Komaie-Moghaddam, Haniyeh; Podgornik, Rudolf

2015-05-07

We study the effective interaction mediated by strongly coupled Coulomb fluids between dielectric surfaces carrying quenched, random monopolar charges with equal mean and variance, both when the Coulomb fluid consists only of mobile multivalent counterions and when it consists of an asymmetric ionic mixture containing multivalent and monovalent (salt) ions in equilibrium with an aqueous bulk reservoir. We analyze the consequences that follow from the interplay between surface charge disorder, dielectric and salt image effects, and the strong electrostatic coupling that results from multivalent counterions on the distribution of these ions and the effective interaction pressure they mediate between the surfaces. In a dielectrically homogeneous system, we show that the multivalent counterions are attracted towards the surfaces with a singular, disorder-induced potential that diverges logarithmically on approach to the surfaces, creating a singular but integrable counterion density profile that exhibits an algebraic divergence at the surfaces with an exponent that depends on the surface charge (disorder) variance. This effect drives the system towards a state of lower thermal 'disorder', one that can be described by a renormalized temperature, exhibiting thus a remarkable antifragility. In the presence of an interfacial dielectric discontinuity, the singular behavior of counterion density at the surfaces is removed but multivalent counterions are still accumulated much more strongly close to randomly charged surfaces as compared with uniformly charged ones. The interaction pressure acting on the surfaces displays in general a highly non-monotonic behavior as a function of the inter-surface separation with a prominent regime of attraction at small to intermediate separations. This attraction is caused directly by the combined effects from charge disorder and strong coupling electrostatics of multivalent counterions, which dominate the surface-surface repulsion due to the (equal) mean charges on the two surfaces and the osmotic pressure of monovalent ions residing between them. These effects can be quite significant even with a small degree of surface charge disorder relative to the mean surface charge. The strong coupling, disorder-induced attraction is typically much stronger than the van der Waals interaction between the surfaces, especially within a range of several nanometers for the inter-surface separation, where such effects are predicted to be most pronounced.

Morphological and Optical Characteristics of Chitosan(1-x):Cuox (4 ≤ x ≤ 12) Based Polymer Nano-Composites: Optical Dielectric Loss as an Alternative Method for Tauc's Model.

PubMed

Aziz, Shujahadeen B

2017-12-13

In this work, copper (Cu) nanoparticles with observable surface plasmonic resonance (SPR) peaks were synthesized by an in-situ method. Chitosan host polymer was used as a reduction medium and a capping agent for the Cu nanoparticles. The surface morphology of the samples was investigated through the use of scanning electron micrograph (SEM) technique. Copper nanoparticles appeared as chains and white specks in the SEM images. The strong peaks due to the Cu element observed in the spectrum of energy dispersive analysis of X-rays. For the nanocomposite samples, obvious peaks due to the SPR phenomena were obtained in the Ultraviolet-visible (UV-vis) spectra. The effect of Cu nanoparticles on the host band gap was understood from absorption edges shifting of absorption edges to lower photon energy. The optical dielectric loss parameter obtained from the measurable quantities was used as an alternative method to study the band structure of the samples. Quantum mechanical models drawbacks, in the study of band gap, were explained based on the optical dielectric loss. A clear dispersion region was able to be observed in refractive indices spectra of the composite samples. A linear relationship with a regression value of 0.99 was achieved between the refractive index and volume fractions of CuI content. Cu nanoparticles with various sizes and homogenous dispersions were also determined from transmission electron microscope (TEM) images.

Improving the Electromagnetic Wave Absorption Properties of the Layered MoS2 by Cladding with Ni Nanoparticles

NASA Astrophysics Data System (ADS)

Zhang, Zilong; Wang, Zilin; Heng, Liuyang; Wang, Shuai; Chen, Xiqiao; Fu, Xiquan; Zou, Yanhong; Tang, Zhixiang

2018-05-01

MoS2 is a promising material with microwave absorption performance due to its high dielectric properties and low density. However, pure MoS2 is non-magnetic and has a bad impedance matching characteristic. In this study we prepared the Ni/MoS2 nanocomposites by cladding the MoS2 micrometer slices with magnetic Ni nanoparticles. Our results show that the microwave absorption properties of Ni/MoS2 nanocomposites have been improved obviously compared with the pure MoS2. Because of the introduction of Ni particles, the permeability of the nanocomposites has been turned from one to a complex, indicating a newly added magnetic loss. Meanwhile, the big gap between the permittivity and permeability of the Ni/MoS2 nanocomposites has been properly narrowed, which suggests an improved impedance matching. Moreover, the dielectric Cole-Cole semicircle shows that there are more Debye relaxation processes for the Ni/MoS2 nanocomposites, which further enhances the dielectric loss. Due to its improved electromagnetic properties, the minimum reflection loss (RL) value of the Ni/MoS2 nanocomposites with 60 wt % loading reaches -55 dB and the absorption bandwidth (<-10 dB) is up to 4.0 GHz (10.8-14.8 GHz) with a matching thickness of 1.5 mm. The results provide an excellent candidate for microwave absorbing materials with a broad effective absorption bandwidth at thin thicknesses.

Morphological and Optical Characteristics of Chitosan(1−x):Cuox (4 ≤ x ≤ 12) Based Polymer Nano-Composites: Optical Dielectric Loss as an Alternative Method for Tauc’s Model

PubMed Central

2017-01-01

In this work, copper (Cu) nanoparticles with observable surface plasmonic resonance (SPR) peaks were synthesized by an in-situ method. Chitosan host polymer was used as a reduction medium and a capping agent for the Cu nanoparticles. The surface morphology of the samples was investigated through the use of scanning electron micrograph (SEM) technique. Copper nanoparticles appeared as chains and white specks in the SEM images. The strong peaks due to the Cu element observed in the spectrum of energy dispersive analysis of X-rays. For the nanocomposite samples, obvious peaks due to the SPR phenomena were obtained in the Ultraviolet-visible (UV-vis) spectra. The effect of Cu nanoparticles on the host band gap was understood from absorption edges shifting of absorption edges to lower photon energy. The optical dielectric loss parameter obtained from the measurable quantities was used as an alternative method to study the band structure of the samples. Quantum mechanical models drawbacks, in the study of band gap, were explained based on the optical dielectric loss. A clear dispersion region was able to be observed in refractive indices spectra of the composite samples. A linear relationship with a regression value of 0.99 was achieved between the refractive index and volume fractions of CuI content. Cu nanoparticles with various sizes and homogenous dispersions were also determined from transmission electron microscope (TEM) images. PMID:29236074

Effects of Various Passivation Layers on Electrical Properties of Multilayer MoS₂ Transistors.

PubMed

Ma, Jiyeon; Yoo, Geonwook

2018-09-01

So far many of research on transition metal dichalcogenides (TMDCs) are based on a bottomgate device structure due to difficulty with depositing a dielectric film on top of TMDs channel layer. In this work, we study different effects of various passivation layers on electrical properties of multilayer MoS2 transistors: spin-coated CYTOP, SU-8, and thermal evaporated MoOX. The SU-8 passivation layer alters device performance least significantly, and MoOX induces positive threshold voltage shift of ~8.0 V due to charge depletion at the interface, and the device with CYTOP layer exhibits decreased field-effect mobility by ~50% due to electric dipole field effect of C-F bonds in the end groups. Our results imply that electrical properties of the multilayer MoS2 transistors can be modulated using a passivation layer, and therefore a proper passivation layer should be considered for MoS2 device structures.

Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

Effect of dead layer and strain on diffuse phase transition of PLZT relaxor thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tong, S.; Narayanan, M.; Ma, B.

2011-02-01

Bulk relaxor ferroelectrics exhibit excellent permittivity compared to their thin film counterpart, although both show diffuse phase transition (DPT) behavior unlike normal ferroelectrics. To better understand the effect of dead layer and strain on the observed anomaly in the dielectric properties, we have developed relaxor PLZT (lead lanthanum zirconate titanate) thin films with different thicknesses and measured their dielectric properties as a function of temperature and frequency. The effect of dead layer on thin film permittivity has been found to be independent of temperature and frequency, and is governed by the Schottky barrier between the platinum electrode and PLZT. Themore » total strain (thermal and intrinsic) in the film majorly determines the broadening, dielectric peak and temperature shift in the relaxor ferroelectric. The Curie-Weiss type law for relaxors has been further modified to incorporate these two effects to accurately predict the DPT behavior of thin film and bulk relaxor ferroelectrics. The dielectric behavior of thin film is predicted by using the bulk dielectric data from literature in the proposed equation, which agree well with the measured dielectric behavior.« less

Temperature dependence of the dielectric properties of rubber wood

Treesearch

Mohammed Firoz Kabir; Wan M. Daud; Kaida B. Khalid; Haji A.A. Sidek

2001-01-01

The effect of temperature on the dielectric properties of rubber wood was investigated in three anisotropic directions—longitudinal, radial, and tangential, and at different measurement frequencies. Low frequency measurements were conducted with a dielectric spectrometer, and high frequencies used microwave applied with open-ended coaxial probe sensors. Dielectric...

Particle-in-cell simulation of multipactor discharge on a dielectric in a parallel-plate waveguide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakharov, A. S., E-mail: sakharov-as@mail.ru; Ivanov, V. A.; Konyzhev, M. E.

2016-06-15

An original 2D3V (two-dimensional in coordinate space and three-dimensional in velocity space) particle-in-cell code has been developed for simulation of multipactor discharge on a dielectric in a parallelplate metal waveguide with allowance for secondary electron emission (SEE) from the dielectric surface and waveguide walls, finite temperature of secondary electrons, electron space charge, and elastic and inelastic scattering of electrons from the dielectric and metal surfaces. The code allows one to simulate all stages of the multipactor discharge, from the onset of the electron avalanche to saturation. It is shown that the threshold for the excitation of a single-surface multipactor onmore » a dielectric placed in a low-profile waveguide with absorbing walls increases as compared to that in the case of an unbounded dielectric surface due to escape of electrons onto the waveguide walls. It is found that, depending on the microwave field amplitude and the SEE characteristics of the waveguide walls, the multipactor may operate in two modes. In the first mode, which takes place at relatively low microwave amplitudes, a single-surface multipactor develops only on the dielectric, the surface of which acquires a positively potential with respect to the waveguide walls. In the second mode, which occurs at sufficiently high microwave intensities, a single-surface multipactor on the dielectric and a two-surface multipactor between the waveguide walls operate simultaneously. In this case, both the dielectric surface and the interwall space acquire a negative potential. It is shown that electron scattering from the dielectric surface and waveguide walls results in the appearance of high-energy tails in the electron distribution function.« less

Study of Maxwell–Wagner (M–W) relaxation behavior and hysteresis observed in bismuth titanate layered structure obtained by solution combustion synthesis using dextrose as fuel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subohi, Oroosa, E-mail: oroosa@gmail.com; Shastri, Lokesh; Kumar, G.S.

2014-01-01

Graphical abstract: X-ray diffraction studies show that phase formation and crystallinity was reached only after calcinations at 800 °C. Dielectric constant versus temperature curve shows ferroelectric to paraelectric transition temperature (T{sub c}) to be 650 °C. Complex impedance curves show deviation from Debye behavior. The material shows a thin PE Loop with low remnant polarization due to high conductivity in the as prepared sample. - Highlights: • Bi{sub 4}Ti{sub 3}O{sub 12} is synthesized using solution combustion technique with dextrose as fuel. • Dextrose has high reducing capacity (+24) and generates more no. of moles of gases. • Impedance studies showmore » that the sample follows Maxwell–Wagner relaxation behavior. • Shows lower remnant polarization due to higher c-axis ratio. - Abstract: Structural, dielectric and ferroelectric properties of bismuth titanate (Bi{sub 4}Ti{sub 3}O{sub 12}) obtained by solution combustion technique using dextrose as fuel is studied extensively in this paper. Dextrose is used as fuel as it has high reducing valancy and generates more number of moles of gases during the reaction. X-ray diffraction studies show that phase formation and crystallinity was reached only after calcinations at 800 °C. Dielectric constant versus temperature curve shows ferroelectric to paraelectric transition temperature (T{sub c}) to be 650 °C. The dielectric loss is very less (tan δ < 1) at lower temperatures but increases around T{sub c} due to structural changes in the sample. Complex impedance curves show deviation from Debye behavior. The material shows a thin PE Loop with low remnant polarization due to high conductivity in the as prepared sample.« less

High Voltage Testing. Volume 2. Specifications and Test Procedures

DTIC Science & Technology

1982-08-01

the greatest impact on the initial assumption and criteria developed in the published criteria documents include: dielectric withstanding voltage...3382-75 Measurement of Energy and Integrated Charge Transfer Due to Partial Discharges (Corona) Using Bridge Techniques. ASTM-D 3426 - Dielectric... Energy (NEMA Publication No. WC 7-1971). NEMA Publication No. 109 - AIEE-EEI-NEMA Standard Basic Insulation Level. 092-57 - Method of Test for Flash and

Effect of DC bias on dielectric properties of nanocrystalline CuAlO2

NASA Astrophysics Data System (ADS)

Prakash, T.; Ramasamy, S.; Murty, B. S.

2013-03-01

Grain boundary effect on the room temperature dielectric behavior in mechanically alloyed nanocrystalline CuAlO2 has been investigated using impedance spectroscopy under the applied DC bias voltages 0 V to 4.8 V in a periodic interval of 0.2 V. Analysis of impedance data confirms the existence of double Schottky potential barrier heights ( Φ b ) between two adjacent grains (left and right side) with grain boundary and its influences in dielectric relaxation time ( τ), dielectric constant ( ɛ') and dielectric loss (tan δ) factor. Also, clear evidence on the suppression of Φ b was demonstrated in the higher applied bias voltages with the parameter τ. At equilibrium state, τ is 0.63 ms and it was reduced to 0.13 ms after the 3.2 V applied DC bias. These observed DC bias voltage effects are obeying `brick layer model' and also elucidates Φ b is playing a crucial role in controlling dielectric properties of nanomaterials.

Radio frequency and capacitive sensors for dielectric characterization of low-conductivity media

NASA Astrophysics Data System (ADS)

Sheldon, Robert T.

Low-conductivity media are found in a vast number of applications, for example as electrical insulation or as the matrix polymer in high strength-to-weight ratio structural composites. In some applications, these materials are subjected to extreme environmental, thermal, and mechanical conditions that can affect the material's desired performance. In a more general sense, a medium may be comprised of one or more layers with unknown material properties that may affect the desired performance of the entire structure. It is often, therefore, of great import to be able to characterize the material properties of these media for the purpose of estimating their future performance in a certain application. Low-conductivity media, or dielectrics, are poor electrical conductors and permit electromagnetic waves and static electric fields to pass through with minimal attenuation. The amount of electrical energy that may be stored (and lost) in these fields depends directly upon the material property, permittivity, which is generally complex, frequency-dependent and has a measurable effect on sensors designed to characterize dielectric media. In this work, two different types of dielectric sensors: radio frequency resonant antennas and lower-frequency (<1 MHz) capacitive sensors, are designed for permittivity characterization in their respective frequency regimes. In the first part of this work, the capability of characterizing multilayer dielectric structures is studied using a patch antenna, a type of antenna that is primarily designed for data communications in the microwave bands but has application in the field of nondestructive evaluation as well. Each configuration of a patch antenna has a single lowest resonant (dominant mode) frequency that is dependent upon the antenna's substrate material and geometry as well as the permittivity and geometry of exterior materials. Here, an extant forward model is validated using well-characterized microwave samples and a new method of resonant frequency and quality factor determination from measured data is presented. Excellent agreement between calculated and measured values of sensor resonant frequency was obtained for the samples studied. Agreement between calculated and measured quality factor was good in some cases but incurred the particular challenge of accurately quantifying multiple contributions to loss from the sensor structure itself, which at times dominates the contribution due to the sample material. Two later chapters describe the development of capacitive sensors to quantify the low-frequency changes in material permittivity due to environmental aging mechanisms. One embodiment involves the application of coplanar concentric interdigital electrode sensors for the purpose of investigating polymer-matrix degradation in glass-fiber composites due to isothermal aging. Samples of bismaleimide-matrix glass-fiber composites were aged at several high temperatures to induce thermal degradation and capacitive sensors were used to measure the sensor capacitance and dissipation factor, parameters that are directly proportional to the real and imaginary components of complex permittivity, respectively. It was shown that real permittivity and dissipation factor decreased with increasing aging temperature, a trend that was common to both interdigital sensor measurements and standard parallel plate electrode measurements. The second piece of work involves the development of cylindrical interdigital electrode sensors to characterize complex permittivity changes in wire insulation due to aging-related degradation. The sensor was proven effective in detecting changes in irradiated nuclear power plant wiring insulation and in aircraft wiring insulation due to liquid chemical immersion. In all three cases, the results indicate a clear correlation of measured capacitance and dissipation factor with increased degradation.

Preparation, structural and dielectric characteristics of Y0.5La0.95PO4 nanoparticles

NASA Astrophysics Data System (ADS)

Raina, Bindu; Verma, Seema; Gupta, Vandana; Bamzai, K. K.

2018-05-01

Nanoparticles of yttrium substituted lanthanum phosphate having formulae Y0.5La0.95PO4 were successfully prepared through co-precipitation method. The phase, purity and crystallinity of 5% yttrium substituted lanthanum phosphate (Y: LaP 5%) powder was characterized by X-ray diffraction technique which suggests the sample belonging to monoclinic monazite crystal system. The spherical morphology with partial agglomeration having grain size in the nano scale range was observed with transmission electron microscopy. FTIR analysis depicts the presence of water molecule along with the phosphate group. The electrical properties of the grown composition show dependence of dielectric constant and dielectric loss on frequency and temperature. The continuous decrease in dielectric constant with increase in frequency suggests that the conduction mechanism is due to hopping of the charge carriers from one site to another.

Dissecting ion-specific dielectric spectra of sodium-halide solutions into solvation water and ionic contributions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rinne, Klaus F.; Netz, Roland R.; Gekle, Stephan

2014-12-07

Using extensive equilibrium molecular dynamics simulations we determine the dielectric spectra of aqueous solutions of NaF, NaCl, NaBr, and NaI. The ion-specific and concentration-dependent shifts of the static dielectric constants and the dielectric relaxation times match experimental results very well, which serves as a validation of the classical and non-polarizable ionic force fields used. The purely ionic contribution to the dielectric response is negligible, but determines the conductivity of the salt solutions. The ion-water cross correlation contribution is negative and reduces the total dielectric response by about 5%-10% for 1 M solutions. The dominating water dielectric response is decomposed into differentmore » water solvation shells and ion-pair configurations, by this the spectral blue shift and the dielectric decrement of salt solutions with increasing salt concentration is demonstrated to be primarily caused by first-solvation shell water. With rising salt concentration the simulated spectra show more pronounced deviations from a single-Debye form and can be well described by a Cole-Cole fit, in quantitative agreement with experiments. Our spectral decomposition into ionic and different water solvation shell contributions does not render the individual contributions more Debye-like, this suggests the non-Debye-like character of the dielectric spectra of salt solutions not to be due to the superposition of different elementary relaxation processes with different relaxation times. Rather, the non-Debye-like character is likely to be an inherent spectral signature of solvation water around ions.« less

A new method for achieving enhanced dielectric response over a wide temperature range

DOE PAGES

Maurya, Deepam; Sun, Fu -Chang; Pamir Alpay, S.; ...

2015-10-19

We report a novel approach for achieving high dielectric response over a wide temperature range. In this approach, multilayer ceramic heterostructures with constituent compositions having strategically tuned Curie points (TC) were designed and integrated with varying electrical connectivity. Interestingly, these multilayer structures exhibited different dielectric behavior in series and parallel configuration due to variations in electrical boundary conditions resulting in the differences in the strength of the electrostatic coupling. The results are explained using nonlinear thermodynamic model taking into account electrostatic interlayer interaction. We believe that present work will have huge significance in design of high performance ceramic capacitors.

Compositionally Graded Multilayer Ceramic Capacitors

DOE PAGES

Song, Hyun-Cheol; Zhou, Jie E.; Maurya, Deepam; ...

2017-09-27

Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. In this paper, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (<2.5%) over the required temperature ranges specified in the standard industrial classifications. The compositional grading resulted in generation of internal bias field which enhanced the tunability due to increased nonlinearity. The electric field tunability of MLCCs provides an important avenue for design of miniature filters andmore » power converters.« less

A new method for achieving enhanced dielectric response over a wide temperature range

PubMed Central

Maurya, Deepam; Sun, Fu-Chang; Pamir Alpay, S.; Priya, Shashank

2015-01-01

We report a novel approach for achieving high dielectric response over a wide temperature range. In this approach, multilayer ceramic heterostructures with constituent compositions having strategically tuned Curie points (TC) were designed and integrated with varying electrical connectivity. Interestingly, these multilayer structures exhibited different dielectric behavior in series and parallel configuration due to variations in electrical boundary conditions resulting in the differences in the strength of the electrostatic coupling. The results are explained using nonlinear thermodynamic model taking into account electrostatic interlayer interaction. We believe that present work will have huge significance in design of high performance ceramic capacitors. PMID:26477391

Investigation of dielectric properties of different cake formulations during microwave and infrared-microwave combination baking.

PubMed

Sakiyan, Ozge; Sumnu, Gulum; Sahin, Serpil; Meda, Venkatesh

2007-05-01

Dielectric properties can be used to understand the behavior of food materials during microwave processing. Dielectric properties influence the level of interaction between food and high frequency electromagnetic energy. Dielectric properties are, therefore, important in the design of foods intended for microwave preparation. In this study, it was aimed to determine the variation of dielectric properties of different cake formulations during baking in microwave and infrared-microwave combination oven. In addition, the effects of formulation and temperature on dielectric properties of cake batter were examined. Dielectric constant and loss factor of cake samples were shown to be dependent on formulation, baking time, and temperature. The increase in baking time and temperature decreased dielectric constant and loss factor of all formulations. Fat content was shown to increase dielectric constant and loss factor of cakes.

Examination of Effective Dielectric Constants Derived from Non-Spherical Melting Hydrometeor

NASA Astrophysics Data System (ADS)

Liao, L.; Meneghini, R.

2009-04-01

The bright band, a layer of enhanced radar echo associated with melting hydrometeors, is often observed in stratiform rain. Understanding the microphysical properties of melting hydrometeors and their scattering and propagation effects is of great importance in accurately estimating parameters of the precipitation from spaceborne radar and radiometers. However, one of the impediments in the study of the radar signature of the melting layer is the determination of effective dielectric constants of melting hydrometeors. Although a number of mixing formulas are available to compute the effective dielectric constants, their results vary to a great extent when water is a component of the mixture, such as in the case of melting snow. It is also physically unclear as to how to select among these various formulas. Furthermore, the question remains as to whether these mixing formulas can be applied to computations of radar polarimetric parameters from non-spherical melting particles. Recently, several approaches using numerical methods have been developed to derive the effective dielectric constants of melting hydrometeors, i.e., mixtures consisting of air, ice and water, based on more realistic melting models of particles, in which the composition of the melting hydrometeor is divided into a number of identical cells. Each of these cells is then assigned in a probabilistic way to be water, ice or air according to the distribution of fractional water contents for a particular particle. While the derived effective dielectric constants have been extensively tested at various wavelengths over a range of particle sizes, these numerical experiments have been restricted to the co-polarized scattering parameters from spherical particles. As polarimetric radar has been increasingly used in the study of microphysical properties of hydrometeors, an extension of the theory to polarimetric variables should provide additional information on melting processes. To account for polarimetric radar measurements from melting hydrometeors, it is necessary to move away from the restriction that the melting particles are spherical. In this study, our primary focus is on the derivation of the effective dielectric constants of non-spherical particles that are mixtures of ice and water. The computational model for the ice-water particle is described by a collection of 128x128x128 cubic cells of identical size. Because of the use of such a high-resolution model, the particles can be described accurately not only with regard to shape but with respect to structure as well. The Cartesian components of the mean internal electric field of particles, which are used to infer the effective dielectric constants, are calculated at each cell by the use of the Conjugate Gradient-Fast Fourier Transform (CG-FFT) numerical method. In this work we first check the validity of derived effective dielectric constant from a non-spherical mixed phase particle by comparing the polarimetric scattering parameters of an ice-water spheroid obtained from the CGFFT to those computed from the T-matrix for a homogeneous particle with the same geometry as that of the mixed phase particle (such as size, shape and orientation) and with an effective dielectric constant derived from the internal field of the mixed-phase particle. The accuracy of the effective dielectric constant can be judged by whether the scattering parameters of interest can accurately reproduce those of the exact solution, i.e., the T-matrix results. The purpose of defining an effective dielectric constant is to reduce the complexity of the scattering calculations in the sense that the effective dielectric constant, once obtained, may be applicable to a range of particle sizes, shapes and orientations. Conversely, if a different effective dielectric constant is needed for each particle size or shape, then its utility would be marginal. Having verified that the effective dielectric constant defined for a particular particle with a fixed shape, size, and orientation is valid, a check is performed to see if this effective dielectric constant can be used to characterize a class of particle types (with arbitrary sizes, shapes and orientations) if the fractional ice-water contents of melting particles remain the same. Among the scattering and polarimatric parameters used for examination of effective dielectric constant in this study, are the radar backscattering, extinction and scattering coefficients, asymmetry factor, differential reflectivity factor (ZDR), phase shift and linear polarization ratio (LDR). The goal is to determine whether the effective dielectric constant approach provides a means to compute accurately the radar polarimetric scattering parameters and radiometer brightness temperature quantities from the melting layer in a relatively simple and efficient way.

The effect of dopants on the microwave dielectric properties of Ba(Mg{sub 0.33}Ta{sub 0.67})O{sub 3} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Surendran, Kuzhichalil P.; Sebastian, Mailadil T.; Mohanan, Pezholil

2005-11-01

The effect of dopants with different valencies and ionic radii on the densification, structural ordering, and microwave dielectric properties of Ba(Mg{sub 1/3}Ta{sub 2/3})O{sub 3} (BMT) is investigated. It is found that dopants such as Sb{sub 2}O{sub 5}, MnO, ZrO{sub 2}, WO{sub 3}, and ZnO improve the microwave dielectric properties of BMT. Addition of trivalent dopants is detrimental to the cation ordering and dielectric properties of BMT. A correlation between the microwave dielectric properties of BMT and ionic radii of the dopant has been established. The variation of the dielectric properties of pure and doped BMT at cryogenic temperatures is alsomore » discussed.« less

Depolarization current relaxation process of insulating dielectrics after corona poling under different charging conditions

NASA Astrophysics Data System (ADS)

Zhang, J. W.; Zhou, T. C.; Wang, J. X.; Yang, X. F.; Zhu, F.; Tian, L. M.; Liu, R. T.

2017-10-01

As an insulating dielectric, polyimide is favorable for the application of optoelectronics, electrical insulation system in electric power industry, insulating, and packaging materials in space aircraft, due to its excellent thermal, mechanical and electrical insulating stability. The charge storage profile of such insulating dielectric is utmost important to its application, when it is exposed to electron irradiation, high voltage corona discharge or other treatments. These treatments could induce changes in physical and chemical properties of treated samples. To investigate the charge storage mechanism of the insulating dielectrics after high-voltage corona discharge, the relaxation processes responsible for corona charged polyimide films under different poling conditions were analyzed by the Thermally Stimulated Discharge Currents method (TSDC). In the results of thermal relaxation process, the appearance of various peaks in TSDC spectra provided a deep insight into the molecular status in the dielectric material and reflected stored space charge relaxation process in the insulating polymers after corona discharge treatments. Furthermore, the different space charge distribution status under various poling temperature and different discharge voltage level were also investigated, which could partly reflect the influence of the ambiance condition on the functional dielectrics after corona poling.

A Comprehensive Study on Dielectric Properties of Volcanic Rock/PANI Composites

NASA Astrophysics Data System (ADS)

Kiliç, M.; Karabul, Y.; Okutan, M.; İçelli, O.

2016-05-01

Basalt is a very well-known volcanic rock that is dark colored and relatively rich in iron and magnesium, almost located each country in the world. These rocks have been used in the refused rock industry, to produce building tiles, construction industrial, highway engineering. Powders and fibers of basalt rocks are widely used of radiation shielding, thermal stability, heat and sound insulation. This study examined three different basalt samples (coded CM-1, KYZ-13 and KYZ-24) collected from different regions of Van province in Turkey. Polyaniline (PANI) is one of the representative conductive polymers due to its fine environmental stability, huge electrical conductivity, as well as a comparatively low cost. Also, the electrical and thermal properties of polymer composites containing PANI have been widely studied. The dielectric properties of Basalt/Polyaniline composites in different concentrations (10, 25, 50 wt.% PANI) have been investigated by dielectric spectroscopy method at the room temperature. The dielectric parameters (dielectric constants, loss and strength) were measured in the frequency range of 102 Hz-106 Hz at room temperature. The electrical mechanism change with PANI dopant. A detailed dielectrically analysis of these composites will be presented.

Colossal dielectric permittivity in (Al + Nb) co-doped rutile SnO2 ceramics with low loss at room temperature

NASA Astrophysics Data System (ADS)

Song, Yongli; Wang, Xianjie; Zhang, Xingquan; Qi, Xudong; Liu, Zhiguo; Zhang, Lingli; Zhang, Yu; Wang, Yang; Sui, Yu; Song, Bo

2016-10-01

The exploration of colossal dielectric permittivity (CP) materials with low dielectric loss in a wide range of frequencies/temperatures continues to attract considerable interest. In this paper, we report CP in (Al + Nb) co-doped rutile SnO2 ceramics with a low dielectric loss at room temperature. Al0.02Nb0.05Sn0.93O2 and Al0.03Nb0.05Sn0.92O2 ceramics exhibit high relative dielectric permittivities (above 103) and low dielectric losses (0.015 < tan δ < 0.1) in a wide range of frequencies and at temperatures from 140 to 400 K. Al doping can effectively modulate the dielectric behavior by increasing the grain and grain boundary resistances. The large differences in the resistance and conductive activation energy of the grains and grain boundaries suggest that the CP in co-doped SnO2 ceramics can be attributed to the internal barrier layer capacitor effect.

Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor.

PubMed

Qi, Qiong; Yu, Aifang; Wang, Liangmin; Jiang, Chao

2010-11-01

The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm2Ns with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm2Ns and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

Analysis of the topochemical effects of dielectric-barrier discharge on cellulosic fibers

Treesearch

Lorraine C. Vander Wielen; Thomas Elder; Arthur J. Ragauskas

2005-01-01

This study investigates the fundamental topochemical effects of dielectric-barrier discharge treatment on bleached chemical pulp and unbleached mechanical pulp fiber surfaces. Fibers were treated with various levels of dielectric-barrier discharge treatment ranging from 0 to 9.27 kw/m2/min. Changes to the fiber surface topochemistry were investigated by atomic force...

Achievement of High-Response Organic Field-Effect Transistor NO₂ Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction.

PubMed

Han, Shijiao; Cheng, Jiang; Fan, Huidong; Yu, Junsheng; Li, Lu

2016-10-21

High-response organic field-effect transistor (OFET)-based NO₂ sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO₂ analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO₂. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO₂ molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO₂ sensors in future electronic nose and environment monitoring.

Achievement of High-Response Organic Field-Effect Transistor NO2 Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction

PubMed Central

Han, Shijiao; Cheng, Jiang; Fan, Huidong; Yu, Junsheng; Li, Lu

2016-01-01

High-response organic field-effect transistor (OFET)-based NO2 sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO2 analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO2. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO2 molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO2 sensors in future electronic nose and environment monitoring. PMID:27775653

Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

NASA Astrophysics Data System (ADS)

Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.

2007-04-01

Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

Visualization of a Unidirectional Electromagnetic Waveguide Using Topological Photonic Crystals Made of Dielectric Materials

NASA Astrophysics Data System (ADS)

Yang, Yuting; Xu, Yun Fei; Xu, Tao; Wang, Hai-Xiao; Jiang, Jian-Hua; Hu, Xiao; Hang, Zhi Hong

2018-05-01

We demonstrate experimentally that a photonic crystal made of Al2O3 cylinders exhibits topological time-reversal symmetric electromagnetic propagation, similar to the quantum spin Hall effect in electronic systems. A pseudospin degree of freedom in the electromagnetic system representing different states of orbital angular momentum arises due to a deformation of the photonic crystal from the ideal honeycomb lattice. It serves as the photonic analogue to the electronic Kramers pair. We visualized qualitatively and measured quantitatively that microwaves of a specific pseudospin propagate only in one direction along the interface between a topological photonic crystal and a trivial one. As only a conventional dielectric material is used and only local real-space manipulations are required, our scheme can be extended to visible light to inspire many future applications in the field of photonics and beyond.

Electronic and optical properties of antiferromagnetic iron doped NiO - A first principles study

NASA Astrophysics Data System (ADS)

Petersen, John E.; Twagirayezu, Fidele; Scolfaro, Luisa M.; Borges, Pablo D.; Geerts, Wilhelmus J.

2017-05-01

Antiferromagnetic NiO is a candidate for next generation high-speed and scaled RRAM devices. Here, electronic and optical properties of antiferromagnetic NiO: Fe 25% in the rock salt structure are studied and compared to intrinsic NiO. From density of states and complex dielectric function analysis, the first optical transition is found to be at lower frequency than intrinsic NiO due to an Fe impurity level being the valence band maximum. The resulting effects on refractive index, reflectivity, absorption, optical conductivity and loss function for Fe-doped NiO are compared to those of intrinsic NiO, and notable differences are analyzed. The electronic component of the static dielectric constant of NiO: Fe 25% is calculated to be about 2% less than that of intrinsic NiO.

Electric-field-induced association of colloidal particles

NASA Astrophysics Data System (ADS)

Fraden, Seth; Hurd, Alan J.; Meyer, Robert B.

1989-11-01

Dilute suspensions of micron diameter dielectric spheres confined to two dimensions are induced to aggregate linearly by application of an electric field. The growth of the average cluster size agrees well with the Smoluchowski equation, but the evolution of the measured cluster size distribution exhibits significant departures from theory at large times due to the formation of long linear clusters which effectively partition space into isolated one-dimensional strips.

Seamless Integration of Detection and Therapy for Breast Cancer using Targeted Engineered Nanoparticles

DTIC Science & Technology

2007-06-01

and exhibit strong scattering and ab- sorption effects due to the strong plasmon resonance of the metallic-dielectric concentric spherical...neglecting its ab- sorption properties. Thus, the studies will be further separated into two sets, one considering only the scattering properties of the... sorption from the gold nanoshells, the reflectance is more de- pendent on the volume-normalized absorption cross section than the combination of

DNA-nucleobases: Gate Dielectric/Passivation Layer for Flexible GFET-based Sensor Applications (Postprint)

DTIC Science & Technology

2015-09-24

kapton, Polydimethylsiloxane ( PDMS ), photo-print paper (laminate side) and Corning Willow glass (WG). Guanine was deposited onto graphene that had been...flexible substrates-kapton, PDMS , photo-print paper, and WG were performed to determine whether the graphene-substrate interface effects the graphene...flexible substrates-kapton, PDMS , photo-print paper, and WG. Kapton, PDMS , and photo-print paper were chosen as flexible substrates due to their

The Cotton-Mouton effect of liquid water. Part I: The dielectric continuum model

NASA Astrophysics Data System (ADS)

Ruud, Kenneth; Helgaker, Trygve; Rizzo, Antonio; Coriani, Sonia; Mikkelsen, Kurt V.

1997-07-01

We present a gauge-origin independent method for calculating the electric-field dependence of the molecular magnetizability—that is, the hypermagnetizability, related to the Cotton-Mouton Effect (CME)—of solvated molecules. In our approach, the solvated molecule is placed in a spherical cavity surrounded by a linear, homogeneous, and polarizable dielectric medium. We apply the model to investigate the dielectric-medium effects on the CME of liquid water. The effects of electron correlation, molecular geometry, and the surrounding dielectric continuum on the hypermagnetizability and the CME are investigated. The change induced in the hypermagnetizability anisotropy by the dielectric medium is the dominating effect, being almost twice as large as the correlation contribution. The combined effect of electron correlation and the dielectric continuum leads to a doubling of the hypermagnetizability anisotropy when going from the SCF gas phase value (Δη=17.89 a.u.) to the value obtained for the MCSCF wave function in the dielectric medium (Δη=39.74 a.u.). The effects of change in geometry are shown to be small. Our result for the static Cotton-Mouton constant averaged in the temperature range 283.15 K to 293.15 K, mC=15.2×10-20 G-2 cm3 mol-1, differs from experiment still by the sign and by a factor of almost 8. The major reason for this discrepancy is the neglect of short-range interactions such as hydrogen bonding and van der Waals interactions not accounted for by the continuum model.

Steep-slope hysteresis-free negative capacitance MoS2 transistors

NASA Astrophysics Data System (ADS)

Si, Mengwei; Su, Chun-Jung; Jiang, Chunsheng; Conrad, Nathan J.; Zhou, Hong; Maize, Kerry D.; Qiu, Gang; Wu, Chien-Ting; Shakouri, Ali; Alam, Muhammad A.; Ye, Peide D.

2018-01-01

The so-called Boltzmann tyranny defines the fundamental thermionic limit of the subthreshold slope of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV dec-1 at room temperature and therefore precludes lowering of the supply voltage and overall power consumption1,2. Adding a ferroelectric negative capacitor to the gate stack of a MOSFET may offer a promising solution to bypassing this fundamental barrier3. Meanwhile, two-dimensional semiconductors such as atomically thin transition-metal dichalcogenides, due to their low dielectric constant and ease of integration into a junctionless transistor topology, offer enhanced electrostatic control of the channel4-12. Here, we combine these two advantages and demonstrate a molybdenum disulfide (MoS2) two-dimensional steep-slope transistor with a ferroelectric hafnium zirconium oxide layer in the gate dielectric stack. This device exhibits excellent performance in both on and off states, with a maximum drain current of 510 μA μm-1 and a sub-thermionic subthreshold slope, and is essentially hysteresis-free. Negative differential resistance was observed at room temperature in the MoS2 negative-capacitance FETs as the result of negative capacitance due to the negative drain-induced barrier lowering. A high on-current-induced self-heating effect was also observed and studied.

Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

NASA Astrophysics Data System (ADS)

Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

2017-07-01

In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

Effect of aging on the piezoelectric properties of sol-gel derived lead-free BCZT ceramics

NASA Astrophysics Data System (ADS)

Chandrakala, E.; Hazra, Binoy Krishna; Praveen, J. Paul; Das, Dibakar

2018-04-01

Aging is well observed in piezoelectric materials and plays a major role in determining the sustainabilityand performance issues of the piezoelectric based devices. Aging behavior is usually defined as the spontaneous decay of the piezoelectric properties with time. In this present study, the effect of aging on the piezoelectric properties of sol-gel derived lead-free BCZT ceramics has been investigated. During the aging process, the ferroelectric hysteresis loop was shifted along the field axis. The results revealed that the piezoelectric and dielectric properties were rapidly decreased linearly with increasing aging time and become stable with further increase in aging time. Piezoelectric (d33, g33 &kp) and dielectric properties (ɛr) were decreased approximately by 18% after 70 days. This could be due to the gradual stabilization of the ferroelectric domain structurewhich originates from the reorientation of the local defect dipoles and the migration of free oxygen vacancies towards the grain boundaries.

A quantitative approach for pesticide analysis in grape juice by direct interfacing of a matrix compatible SPME phase to dielectric barrier discharge ionization-mass spectrometry.

PubMed

Mirabelli, Mario F; Gionfriddo, Emanuela; Pawliszyn, Janusz; Zenobi, Renato

2018-02-12

We evaluated the performance of a dielectric barrier discharge ionization (DBDI) source for pesticide analysis in grape juice, a fairly complex matrix due to the high content of sugars (≈20% w/w) and pigments. A fast sample preparation method based on direct immersion solid-phase microextraction (SPME) was developed, and novel matrix compatible SPME fibers were used to reduce in-source matrix suppression effects. A high resolution LTQ Orbitrap mass spectrometer allowed for rapid quantification in full scan mode. This direct SPME-DBDI-MS approach was proven to be effective for the rapid and direct analysis of complex sample matrices, with limits of detection in the parts-per-trillion (ppt) range and inter- and intra-day precision below 30% relative standard deviation (RSD) for samples spiked at 1, 10 and 10 ng ml -1 , with overall performance comparable or even superior to existing chromatographic approaches.

Depoling and fatigue behavior of Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystal at megahertz frequencies under bipolar electric field

NASA Astrophysics Data System (ADS)

Chen, Zhaojiang; Li, Shiyang; Zhang, Yang; Cao, Wenwu

2017-05-01

Bipolar electric field induced degradation in [001]c poled Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29PT) single crystals was investigated at megahertz frequencies. The electromechanical coupling factor kt, dielectric constant ɛr, dielectric loss D, and piezoelectric constant d33 were measured as a function of amplitude, frequency, and number of cycles of the applied electric field. Our results showed that samples degrade rapidly when the field amplitude is larger than a critical value due to the onset of domain switching. We define this critical value as the effective coercive field Ec at high frequencies, which increases drastically with frequency. We also demonstrate an effective counter-depoling method by using a dc bias, which could help the design of high field driven devices based on PMN-PT single crystals and operated at megahertz frequencies.

Nonlinearity and Scaling Behavior in Lead Zirconate Titanate Piezoceramic

NASA Astrophysics Data System (ADS)

Mueller, V.

1998-03-01

The results of a comprehensive study of the nonlinear dielectric and electromechanical response of lead zirconate titanate (PZT) piezoceramics are presented. The piezoelectric strain of a series of donor doped (soft PZT) and acceptor doped (hard PZT) polycrystalline systems was measured under quasistatic (nonresonant) conditions. The measuring field was applied both parallel and perpendicular to the poling direction of the ceramic in order to investigate the influence of different symmetry conditions. Dielectric properties were studied in addition to the electromechanical measurements which enables us to compare piezoelectric and dielectric nonlinearities. Due to the different level and type of dopants, the piezoceramics examined differ significantly with regard to its Curie temperature (190^o CE_c2 the nonlinearity can be described in the same way as in soft PZT. The results indicate that irreversible motion of (ferroelastic) non-180^o walls causes the nonlinearity of PZT and that the contribution of (non-ferroelastic) 180^o walls to the linear and nonlinear coefficients is negligibly small. The experimentally observed non-analytic scaling behavior is qualitatively inconsistent with the assumption that the nonlinearity is related to the anharmonicity of the domain wall potential. We suggest that the dynamics of the domain wall in a randomly pinned medium dominates the piezoelectric and dielectric nonlinearity at field strengths well below the limiting field necessary to depole the piezoceramic. The analysis of results obtained at different ceramic systems indicates that linear and nonlinear coefficients are not independent from each other. The observed relationship between linear and nonlinear properties leads us to the suggestion that another extrinsic contribution to the permittivity exists in PZT which may not be attributed to domain wall motion but related to the dielectric dispersion at microwave frequencies.

Dielectric and Electromechanical Properties of Polyurethane and Polydimethylsiloxane Blends and their Nanocomposites

NASA Astrophysics Data System (ADS)

Cakmak, Enes

Conventional means of converting electrical energy to mechanical work are generally considered too noisy and bulky for many contemporary technologies such as microrobotic, microfluidic, and haptic devices. Dielectric electroactive polymers (D-EAPs) constitude a growing class of electroactive polymers (EAP) that are capable of producing mechanica work induced by an applied electric field. D-EAPs are considered remarkably efficient and well suited for a wide range of applications, including ocean-wave energy harvesters and prosthetic devices. However, the real-world application of D-EAPs is very limited due to a number of factors, one of which is the difficulty of producing high actuation strains at acceptably low electric fields. D-EAPs are elastomeric polymers and produce large strain response induced by external electric field. The electromechanical properties of D-EAPs depend on the dielectric properties and mechanical properties of the D-EAP. In terms of dielectric behavior, these actuators require a high dielectric constant, low dielectric loss, and high dielectric strength to produce an improved actuation response. In addition to their dielectric properties, the mechanical properties of D-EAPs, such as elastic moduli and hysteresis, are also of importance. Therefore, material properties are a key feature of D-EAP technology. DE actuator materials reported in the literature cover many types of elastomers and their composites formed with dielectric fillers. Along with polymeric matrix materials, various ceramic, metal, and organic fillers have been employed in enhancing dielectric behavior of DEs. This work describes an effort to characterize elastomer blends and composites of different matrix and dielectric polymer fillers according to their dielectric, mechanical, and electromechanical responses. This dissertation focuses on the development and characterization of polymer-polymer blends and composites from a high-k polyurethane (PU) and polydimethylsiloxane (PDMS) elastomers. Two different routes were followed with respect to elastomer processing: The first is a simple solution blending of the two types of elastomers, and the second is based on preparation of composites from PU nanofiber webs and PDMS elastomer. Both the blends and the nanofiber web composites showed improved dielectric and actuation characteristics.

Photoelectric charging of partially sunlit dielectric surfaces in space

NASA Technical Reports Server (NTRS)

De, B. R.; Criswell, D. R.

1977-01-01

Sunlight-shadow effects may substantially alter the charging situation for a dielectric surface. The sunlight-shadow boundary tends to be the site of intense multipole electric fields. Charges on a sunlit dielectric surface have a finite effective mobility. The charge distribution tends to resemble that on a conducting surface. A boundary between a conducting and a dielectric surface may not represent a conductivity discontinuity when this boundary is sunlit; charges may migrate at a nontrivial rate across the boundary. A contracting or expanding sunlit area may experience a supercharging.

Research on the honeycomb restrain layer application to the high power microwave dielectric window

NASA Astrophysics Data System (ADS)

Zhang, Qingyuan; Shao, Hao; Huang, Wenhua; Guo, Letian

2018-01-01

Dielectric window breakdown is an important problem of high power microwave radiation. A honeycomb layer can suppress the multipactor in two directions to restrain dielectric window breakdown. This paper studies the effect of the honeycomb restrain layer on improving the dielectric window power capability. It also studies the multipactor suppression mechanism by using the electromagnetic particle-in-cell software, gives the design method, and accomplishes the test experiment. The experimental results indicated that the honeycomb restrain layer can effectively improve the power capability twice.

A model for the scattering of high-frequency electromagnetic fields from dielectrics exhibiting thermally-activated electrical losses

NASA Technical Reports Server (NTRS)

Hann, Raiford E.

1991-01-01

An equivalent circuit model (ECM) approach is used to predict the scattering behavior of temperature-activated, electrically lossy dielectric layers. The total electrical response of the dielectric (relaxation + conductive) is given by the ECM and used in combination with transmission line theory to compute reflectance spectra for a Dallenbach layer configuration. The effects of thermally-activated relaxation processes on the scattering properties is discussed. Also, the effect of relaxation and conduction activation energy on the electrical properties of the dielectric is described.

Research on the honeycomb restrain layer application to the high power microwave dielectric window.

PubMed

Zhang, Qingyuan; Shao, Hao; Huang, Wenhua; Guo, Letian

2018-01-01

Dielectric window breakdown is an important problem of high power microwave radiation. A honeycomb layer can suppress the multipactor in two directions to restrain dielectric window breakdown. This paper studies the effect of the honeycomb restrain layer on improving the dielectric window power capability. It also studies the multipactor suppression mechanism by using the electromagnetic particle-in-cell software, gives the design method, and accomplishes the test experiment. The experimental results indicated that the honeycomb restrain layer can effectively improve the power capability twice.

Improving the thermal stability and electrical parameters of a liquid crystalline material 4-n-(nonyloxy) benzoic acid by using Li ion beam irradiation

NASA Astrophysics Data System (ADS)

Kumar, Satendra; Verma, Rohit; Dwivedi, Aanchal; Dhar, R.; Tripathi, Ambuj

2018-05-01

Li ion beam irradiation studies on a liquid crystalline material 4-n-(nonyloxy) benzoic acid (NOBA) have been carried out. The material has phase sequence of I-N-SmC-Cr. Thermodynamic studies demonstrate that an irradiation fluence of 1×1013 ions-cm-2 results in the increased thermal stability of the smectic C (SmC) phase of the material. Dielectric measurements illustrate that the transverse component of the dielectric permittivity and hence the dielectric anisotropy of the material in the nematic (N) and SmC phases are increased as compared to those of the pure material due to irradiation. UV-Visible spectrum of the irradiated material shows an additional peak along with the peak of the pure material. The observed change in the thermodynamic and electrical parameters is attributed to the conversion of some of the dimers of NOBA to monomers of NOBA due to irradiation.

Ultrashort laser pulses and electromagnetic pulse generation in air and on dielectric surfaces.

PubMed

Sprangle, P; Peñano, J R; Hafizi, B; Kapetanakos, C A

2004-06-01

Intense, ultrashort laser pulses propagating in the atmosphere have been observed to emit sub-THz electromagnetic pulses (EMPS). The purpose of this paper is to analyze EMP generation from the interaction of ultrashort laser pulses with air and with dielectric surfaces and to determine the efficiency of conversion of laser energy to EMP energy. In our self-consistent model the laser pulse partially ionizes the medium, forms a plasma filament, and through the ponderomotive forces associated with the laser pulse, drives plasma currents which are the source of the EMP. The propagating laser pulse evolves under the influence of diffraction, Kerr focusing, plasma defocusing, and energy depletion due to electron collisions and ionization. Collective effects and recombination processes are also included in the model. The duration of the EMP in air, at a fixed point, is found to be a few hundred femtoseconds, i.e., on the order of the laser pulse duration plus the electron collision time. For steady state laser pulse propagation the flux of EMP energy is nonradiative and axially directed. Radiative EMP energy is present only for nonsteady state or transient laser pulse propagation. The analysis also considers the generation of EMP on the surface of a dielectric on which an ultrashort laser pulse is incident. For typical laser parameters, the power and energy conversion efficiency from laser radiation to EMP radiation in both air and from dielectric surfaces is found to be extremely small, < 10(-8). Results of full-scale, self-consistent, numerical simulations of atmospheric and dielectric surface EMP generation are presented. A recent experiment on atmospheric EMP generation is also simulated.

Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors

NASA Astrophysics Data System (ADS)

Hourdakis, E.; Koutsoureli, M.; Papaioannou, G.; Nassiopoulou, A. G.

2018-06-01

Barrier-type anodic alumina thin films are interesting for use in high capacitance density metal-insulator-metal capacitors due to their excellent dielectric properties at small thickness. This thickness is easily controlled by the anodization voltage. In previous papers we studied the main parameters of interest of the Al/barrier-type anodic alumina/Al structure for use in RF applications and showed the great potential of barrier-type anodic alumina in this respect. In this paper, we investigated in detail charging/discharging processes and leakage current of the above dielectric material. Two different sets of metal-insulator-metal capacitors were studied, namely, with the top Al electrode being either e-gun deposited or sputtered. The dielectric constant of the barrier-type anodic alumina was found at 9.3. Low leakage current was observed in all samples studied. Furthermore, depending on the film thickness, field emission following the Fowler-Nordheim mechanism was observed above an applied electric field. Charging of the anodic dielectric was observed, occurring in the bulk of the anodic layer. The stored charge was of the order of few μC/cm2 and the calculated trap density ˜2 × 1018 states/cm3, the most probable origin of charge traps being, in our opinion, positive electrolyte ions trapped in the dielectric during anodization. We do not think that oxygen vacancies play an important role, since their existence would have a more important impact on the leakage current characteristics, such as resistive memory effects or significant changes during annealing, which were not observed. Finally, discharging characteristic times as high as 5 × 109 s were measured.

Effect of V2O5 Addition on the Phase Composition of Bi5FeTi3O15 Ceramic and RF/Microwave Dielectric Properties

NASA Astrophysics Data System (ADS)

Aguiar, F. A. A.; Sales, A. J. M.; Araújo, B. S.; Sabóia, K. D. A.; Filho, M. C. Campos; Sombra, A. S. B.; Ayala, A. P.; Fechine, P. B. A.

2017-04-01

Bi5FeTi3O15 (BFT) polycrystalline ceramic with the addition of different concentrations of V2O5 was obtained by a solid-state method. X-ray powder diffraction, Raman spectroscopy and scanning electron microscopy (SEM) were used to study the microstructure and crystalline phases of the ceramics. SEM images showed plate-like morphology with dimensions between 0.32 μm and 3.07 μm (grain size, average around 1.3 μm). For samples with V2O5 concentration below 5%, Raman spectra were mainly determined by the vibrational modes from BFT. Impedance spectroscopy was also performed to evaluate the dielectric properties at microwave and radio frequencies (RF). Two extra phases (Bi4V1.5Fe0.5O10.5 and Bi2Ti2O7) were found due to the chemical reaction between BFT and V2O5. These phases were responsible for the changes in the grain morphology and dielectric response. V2O5 addition increased the real part of the dielectric permittivity ( ɛ') and reduced the dielectric loss tangent (tan δ) values at the RF range of 10 Hz to 1 MHz. For microwave frequencies of 3-3.5 GHz, ɛ' and temperature coefficient of resonant frequency ( τ f) values ranged from 66.52 ppm/°C to 88.60 ppm/°C and -304.3 ppm/°C to -192.6 ppm/°C, respectively. Thereby, BFT ceramics with added V2O5 are good candidates to be used for microwave devices (e.g., cell phones).

Piezoelectric properties of nonstoichiometric Sr1-xBi2+2x/3Ta2O9 ceramics

NASA Astrophysics Data System (ADS)

Jain, Rajni; Chauhan, Arun Kumar Singh; Gupta, Vinay; Sreenivas, K.

2005-06-01

The effect of poling on the structural, dielectric, and piezoelectric properties has been investigated for sol-gel-derived strontium bismuth tantalate (SBT) [Sr1-xBi2+2x/3Ta2O9] ceramics with x =0.0,0.15,0.30,0.45. The dielectric and ferroelectric properties are found to improve with increase in x up to 0.3. Beyond x >0.3 the properties are found to degrade due to the limited solid solubility and the presence of a mixed phase of bismuth tantalate (BiTaO4) is detected with x =0.45. Poling treatment reduces the dielectric dispersion and dielectric loss in the frequency range (0.1-100kHz). The resonance and antiresonance frequencies increase with increase in x (x=0-0.30), and the corresponding minimum impedance decreases. The measured coupling coefficients (kp) are small (0.0967-0.1) for x =0-0.30, and the electromechanical quality factor (Qm=915) is a maximum for the Sr0.7Bi2.2Ta2O9 composition (x=0.30). The estimated piezoelectric charge coefficient (d31) and piezoelectric voltage coefficient (g31) are 5.2pC/N and 5.8×10-3Vm/N, respectively. The positive values of d31 and g31 and the low dielectric permittivity of SBT yield a high value for the hydrostatic coefficients, despite the low charge coefficient of d33=24pC/N. The maximum values of charge coefficient (dh=34pC/N) and voltage coefficient (gh=39×10-3Vm/N) are obtained for Sr0.7Bi2.2Ta2O9 composition, and the estimated hydrostatic figure of merit (dhgh×10-15=1215m2/N) is high.

Laser-Matter Interaction in Dielectrics: Insight from Picosecond-Pulsed Second-Harmonic Generation in Periodically Poled LiTaO3

NASA Astrophysics Data System (ADS)

Louchev, Oleg A.; Wada, Satoshi; Panchenko, Vladislav Ya.

2017-08-01

We develop a modified two-temperature (2T) model of laser-matter interaction in dielectrics based on experimental insight from picosecond-pulsed high-frequency temperature-controlled second-harmonic (515 nm) generation in periodically poled stoichiometric LiTaO3 crystal and required for computational treatment of short-pulsed nonlinear optics and materials processing applications. We show that the incorporation of an extended set of recombination-kinetics-related energy-release and heat-exchange processes following short-pulsed photoionization by two-photon absorption of the second harmonic allows accurate simulation of the electron-lattice relaxation dynamics and electron-lattice temperature evolution in LiTaO3 crystal in nonlinear laser-frequency conversion. Our experimentally confirmed model and detailed simulation study show that two-photon ionization with the recombination mechanism via ion-electron-lattice interaction followed by a direct transfer of the recombination energy to the lattice is the main laser-matter energy-transfer pathway responsible for the majority of the crystal lattice heating (approximately 90%) continuing for approximately 50 ps after laser-pulse termination and competing with effect of electron-phonon energy transfer from the free electrons. This time delay is due to a recombination bottleneck which hinders faster relaxation to thermal equilibrium in photoionized dielectric crystal. Generally, our study suggests that in dielectrics photoionized by short-pulsed radiation with intensity range used in nonlinear laser-frequency conversion, the electron-lattice relaxation period is defined by the recombination-stage bottleneck of a few tens of picoseconds and not by the time of the electron-phonon energy transfer. This modification of the 2T model can be applied to a broad range of processes involving laser-matter interactions in dielectrics and semiconductors for charge density reaching the range of 1021- 1022 cm-3 .

Anomalous Debye-like dielectric relaxation of water in micro-sized confined polymeric systems.

PubMed

Colosi, C; Costantini, M; Barbetta, A; Cametti, C; Dentini, M

2013-12-14

While it is well known that spatial confinement on a nm scale affects the molecular dynamics of water resulting in a hindered dipolar reorientation, question of whether these effects could result at length scales larger than these, i.e., in confined regions of the order of μm or more, is still under debate. Here we use dielectric relaxation spectroscopy techniques to study the relaxation orientation dynamics of water entrapped in different polymeric matrices with pore sizes of the order of 100 μm, analyzing the frequency relaxation behaviour of the dielectric response. Our results show that, contrary to what has been generally thought, even in confinements which are not particularly high such as those realized here, regions typically hundred micrometers in size can affect the water structure, inducing a water phase with properties different from those of bulk water. In particular, we observe a dielectric dispersion centered in the range 10(5)-10(7) Hz, in between the one characteristic of ice (8.3 kHz at T = 0 °C) and the one of bulk water (19.2 GHz at T = 25 °C). The analysis of the dependence on temperature of the relaxation time of this unexpected contribution rules out the possibility that it can be attributed to an interfacial polarization (Maxwell-Wagner effect) and suggests a dipolar Debye-like origin due to a slow-down of the hydrogen-bonded network orientational polarization. Also at these scales, the confinement alters the structure of water, leading to a hindered reorientation. These properties imply that water confined within these polymeric porous matrices is more ordered than bulk water. These findings may be important in order to understand biological processes in cells and in different biological compartments, where water is physiologically confined.

Conductivity versus Dielectric Mechanisms for Electrorheology

NASA Astrophysics Data System (ADS)

Davis, L. C.

1997-03-01

Electrorheological (ER) fluids are continuously and rapidly controllable by an electric field. Controllability of these materials permits the construction of novel intelligent systems such as semiactively controlled shock absorbers and vibration dampers, tunable composite beams and panels, and even reconfigurable Braille arrays. The eventual success of these applications depends in part on developing improved ER fluids, which requires a fundamental understanding of the physics and chemistry of these materials. ER fluids generally consist of highly polarizable colloidal particles suspended in an insulating oil. Particles are typically 1-10 microns in diameter and can be of a wide variety of materials including zeolites, barium titanate, conducting polymers, and oxide-coated metals. Electric fields of magnitude 1-5 kV/mm induce particle chaining and concomitant shear stresses of order 1 kPa. Recent experiments (J. M. Ginder and S. L. Ceccio, J. Rheol. 39, 211 (1995)) using square-wave electric-field excitation have helped to elucidate the mechanisms of ER activity. Immediately after a step-function increase of electric field, chaining occurs due to particle-particle forces arising from dielectric polarization (dipoles and higher multipoles), i.e., it is controlled by the dielectric mismatch between particles and fluid. On a longer time scale, currents flow in the fluid and in the particles so that the forces are eventually dominated by the conductivity mismatch. Characteristic times for the transition between the two regimes are 10-50 ms. Likewise, in the frequency domain, conductivity mismatch dominates the dc response of ER fluids whereas dielectric effects dominate for high frequencies. A theory of ER fluids is given including a model for non-linear effects at high electric fields.

Viscoelastic effects on frequency tuning of a dielectric elastomer membrane resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Jianyou; Jiang, Liying, E-mail: lyjiang@eng.uwo.ca; Khayat, Roger E.

2014-03-28

As a recent application of dielectric elastomers (DEs), DE resonators have become an alternative to conventional silicon-based resonators used in MEMS and have attracted much interest from the research community. However, most existing modeling works for the DE resonators ignore the intrinsic viscoelastic effect of the material that may strongly influence their dynamic performance. Based on the finite-deformation viscoelasticity theory for dielectrics, this paper theoretically examines the in-plane oscillation of a DE membrane resonator to demonstrate how the material viscoelasticity affects the actuation and frequency tuning processes of the resonator. From the simulation results, it is concluded that not onlymore » the applied voltage can change the natural frequency of the resonator, but also the inelastic deformation contributes to frequency tuning. Due to the viscoelasticity of the material, the electrical loading rate influences the actuation process of the DE resonator, while it has little effect on the final steady frequency tuned by the prescribed voltage within the safety range. With the consideration of the typical failure modes of the resonator and the evolution process of the material, the tunable frequency range and the safe range of the applied voltage of the DE membrane resonator with different dimension parameters are determined in this work, which are found to be dependent on the electrical loading rate. This work is expected to provide a better understanding on the frequency tuning of viscoelastic DE membrane resonators and a guideline for the design of DE devices.« less

The Influence of Magnetic Field on Electrokinetic Potential of Colloidal Particles

NASA Astrophysics Data System (ADS)

Koshoridze, S. I.; Levin, Yu. K.

2018-06-01

The influence of a magnetic field on the electrokinetic potential of colloidal particles in a water flow oversaturated with deposited salts is reported. For the first time, the ionic hydration and dielectric permittivity of water in the double electrical layer are taken into consideration. It is demonstrated that the magnetic field influence is increased with the decreasing dielectric permittivity of water but is decreased due to ionic hydration.

The impedance spectroscopic study and dielectric relaxation in A(Ni1/3Ta2/3)O3 [A=Ba, Ca and Sr

NASA Astrophysics Data System (ADS)

Hoque, Md M.; Dutta, A.; Kumar, S.; Sinha, T. P.

2012-09-01

We present the results of impedance spectroscopic study with its analytical interpretations in the framework of electric modulus formalism for Barium Nickel Tantalate Ba(Ni1/3Ta2/3)O3 (BNT), Calcium Nickel Tantalate Ca(Ni1/3Ta2/3)O3 (CNT) and Strontium Nickel Tantalate Sr(Ni1/3Ta2/3)O3 (SNT) synthesized by the solid-state reaction technique. The results of powder X-ray diffraction study reveal that BNT and SNT crystallize in cubic structure with lattice parameter a=4.07 Å and 3.98 Å respectively, whereas CNT crystallizes in monoclinic structure having lattice parameters, a=5.71 Å, b=13.45 Å and c=5.47 Å with β=118.3°. The logarithmic angular frequency dependence of the real part of complex dielectric permittivity and loss tangent as a function of temperature indicate significant dielectric relaxation in the samples, which have been explained by the Debye theory. The frequency dependence of the loss peak and the imaginary part of electrical modulus are found to obey the Arrhenius law. The relaxation mechanism of these samples is modeled by the Cole-Cole equation. This confirms that the polarization mechanism in BNT, CNT and SNT is due to the bulk effect arising in semiconductive grains. The scaling behavior of imaginary part of electric modulus M″ suggests that the relaxation describes the same mechanism at various temperatures but relaxation frequency is strongly temperature dependent. The normalized peak positions of tan δ/tan δm and M″/M″m versus log ω for BNT, CNT and SNT do not overlap completely and are very close to each other. These indicate the presence of both long-range and localized relaxation. Due to their high dielectric constant and low loss tangent, these materials may find several technological applications such as in capacitors, resonators, filters and integrated circuits.

Electrical characterization of doped strontium titanate thin films for semiconductor memories

NASA Astrophysics Data System (ADS)

Han, Jeong Hee

2002-08-01

Doped strontium titanate (ST) thin films were investigated for high-density memory applications. ST has become a promising candidate to replace conventional silicon oxide due to its high inherent dielectric constant, superior leakage characteristics, and good chemical stability. However, oxygen vacancies and the problems that arise as a result are one of the main drawbacks against this material. Resistance degradation is a serious reliability issue in perovskite titanate films and may be a result of oxygen vacancies. In this dissertation, an attempt to reduce the resistance degradation was made by doping the ST films with both niobium and lanthanum. Niobium is a B-site donor in the perovskite, whereas lanthanum is an A-site donor. Both have an extra valence charge than the atom which it replaces in the crystal structure. With a higher valence charge, the number of oxygen vacancies is hoped to be reduced and result in better electrical performance. Experimental results showed that the degradation rate is reduced by doping with either niobium or lanthanum. A bi-layer study was also performed to optimize the dielectric with the strengths of both doped and undoped strontium titanate and to distinguish the source of the oxygen vacancies. A study on the conduction mechanisms and dielectric dispersion was also performed. An additional study was made on the effect of iridium as a possible gate electrode for a MOS capacitor. Hafnium oxide was used as the high-permittivity oxide. The results observed showed that the capacitance was higher for iridium electrodes than those for platinum electrodes. However, both electrodes showed unacceptable frequency dispersion which may be caused by crude patterning techniques. A hysteresis review was also done for hafnium and zirconium oxides. It was observed that the hysteresis measured in the high-permittivity oxides are dependent on the accumulation sweep voltage due to the trapping and de-trapping of charge at the dielectric-silicon interface.

Polaron-electron assisted giant dielectric dispersion in SrZrO{sub 3} high-k dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borkar, Hitesh; Barvat, Arun; Pal, Prabir

2016-06-07

The SrZrO{sub 3} is a well known high-k dielectric constant (∼22) and high optical bandgap (∼5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (T{sub e}) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction.more » X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O{sup 2−} anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO{sub 6} octahedral angle in the temperature range of 650–750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.« less

Electrowetting on semiconductors

NASA Astrophysics Data System (ADS)

Palma, Cesar; Deegan, Robert

2015-01-01

Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

Giant angular dependence of electromagnetic induced transparency in THz metamaterials

NASA Astrophysics Data System (ADS)

Liu, Changji; Huang, Yuanyuan; Yao, Zehan; Yu, Leilei; Jin, Yanping; Xu, Xinlong

2018-02-01

The giant electromagnetic induced transparency (EIT) phenomenon is observed in symmetrical metamaterials with angular dependence in the THz region. This is due to the asymmetrical electromagnetic field distribution on the surface of the metamaterials, which induces asymmetric current distribution. Blueshift with the increase of the unit cell period has been observed, which is due to the unusual electromagnetic interaction between units at oblique incidence. This EIT demonstrates an angular dependent high Q-factor, which is sensitive to the dielectric environment. The angle-induced EIT effect could pave the way for future tunable sensing applications in the THz region.

Fundamental Insight on Developing Low Dielectric Constant Polyimides

NASA Technical Reports Server (NTRS)

Simpson, J. O.; SaintClair, A. K.

1997-01-01

Thermally stable, durable, insulative polyimides are in great demand for the fabrication of microelectronic devices. In this investigation dielectric and optical properties have been studied for several series of aromatic polyimides. The effect of polarizability, fluorine content, and free volume on dielectric constant was examined. In general, minimizing polarizability, maximizing free volume and fluorination all lowered dielectric constants in the polyimides studied.

Study of structure and dielectric properties of 1:2 type modified Barium Niobates in bulk and thin film forms

NASA Astrophysics Data System (ADS)

Bishnoi, Bhagwanti Ben S.

In view of the processing and environmental issues pertaining to lead based ferroelectric materials, investigations on lead free ferroelectrics are carried intensively in recent years. These materials are interesting because, they are flexible with respect to structural changes and functional properties. These materials have potential device applications such as capacitors, sensors, actuators, and memory storage and microwave devices. This thesis is an attempt to elucidate the effect of substitution of isovalent ions (Sr, Ca) at the 'A' site of Hexagonal structured Barium Magnesium Niobate Ba(Mgl/3Nb 2/3)O3 (BMN) as well as effect of simultaneous substitution of divalent ions (Co2+ and Cu2+) on the 'B'-site' of Ba(Mg1/3Nb2/3)O3 (BMN) and Sr(Mg 1/3Nb2/3)O3 (SMN). Their structural, morphological, dielectric, impedance and optical properties are investigated. The XRD study on the ceramic compositions (SMN) showed single phase monoclinic hexagonal perovskite structure at room temperature. The SEM micrograph shows that the grains are uniformly distributed throughout the surface and the average grain size decreases with the substitution of divalent ion doping in Sr(Mg 1/3Nb2/3)O3 ceramic. The diffusivity of ceramics increases with increase in divalent ions substitution. The dielectric study confirmed that the relaxor nature is introduced in the Barium Niobate on replacement by other divalent ions at the A- or B'-site. Among various compositions in Sr(Cu1/3Nb2/3)O3 we obtained most promising dielectric properties. The impedance and modulus spectroscopy were employed to evaluate the different electrical properties of the grain and grain boundary of the ceramics. Ac Conductivity shows the two types of hopping conduction mechanism in frequency exponent vs temperature plots after the divalent ions replacement. The optical band gaps were calculated from UV-Visible spectroscopy ceramic suggested the presence of intermediately energy levels within the band gap. The single phase thin films of various compositions with A- and B'-site substitutions were successfully made using Pulsed laser deposition technique. Over all properties of films are identical to the respective bulk compositions except for some of the samples which exhibited relaxor behaviour only in the film form. Compared to O7+ irradiation the Ag15+ irradiation due to type of defects it created is more effective in reducing lattice strain induced dielectric losses along with marginal loss of dielectric constant. Significant increase in dielectric constant with low loss, on O 7+ as well as Ag15+ ion irradiation, may enhance the electro-optical properties which in turn increase compounds tuneablility for device applications.

Effect of Bi doping on morphotropic phase boundary and dielectric properties of PZT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, Shraddha; Acharya, Smita, E-mail: saha275@yahoo.com

2016-05-23

In our present attempt, Pb{sub (1-x)}Bi{sub x}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} [PBZT] {where x = 0, 0.05, 0.1} is synthesized by sol-gel route. Effect of Bi addition on structure, sinterability and dielectric properties are observed. The presence of morphotropic phase boundary (coexistence of tetragonal and rhombohedral symmetry) is confirmed by X-ray diffraction. Enhancement of sinterability after Bi doping is observed through a systematic sintering program. Frequency and temperature dependent dielectric constant are studied. Bi doping in PZT is found to enhance room temperature dielectric constant. However, at high temperature the dielectric constant of pure PZT is more than that of dopedmore » PZT.« less

Dielectric tensor elements for the description of waves in rotating inhomogeneous magnetized plasma spheroids

NASA Astrophysics Data System (ADS)

Abdoli-Arani, A.; Ramezani-Arani, R.

2012-11-01

The dielectric permittivity tensor elements of a rotating cold collisionless plasma spheroid in an external magnetic field with toroidal and axial components are obtained. The effects of inhomogeneity in the densities of charged particles and the initial toroidal velocity on the dielectric permittivity tensor and field equations are investigated. The field components in terms of their toroidal components are calculated and it is shown that the toroidal components of the electric and magnetic fields are coupled by two differential equations. The influence of thermal and collisional effects on the dielectric tensor and field equations in the rotating plasma spheroid are also investigated. In the limiting spherical case, the dielectric tensor of a stationary magnetized collisionless cold plasma sphere is presented.

Deep Dielectric Charging of Spacecraft Polymers by Energetic Protons

NASA Technical Reports Server (NTRS)

Green, Nelson W.; Dennison, J. R.

2007-01-01

The majority of research in the field of spacecraft charging concentrates on electron charging effects with little discussion of charging by protons. For spacecraft orbiting in the traditional LEO and GEO environments this emphasis on electrons is appropriate since energetic electrons are the dominant species in those orbits. But for spacecraft in orbits within the inner radiation belts or for interplanetary and lunar space probes, proton charging (center dot) effects may also be of concern. To examine bulk spacecraft charging effects in these environments several typical highly insulating spacecraft polymers were exposed to energetic protons (center dot) with energies from 1 Me V to lO Me V to simulate protons from the solar wind and from solar energetic proton events. Results indicate that effects in proton charged dielectrics are distinctly different than those observed due to electron charging. In most cases, the positive surface potential continued to increase for periods on the order of minutes to a day, followed by long time scale decay at rates similar to those observed for electron charging. All samples charged to positive potentials with substantially lower magnitudes than for equivalent electron doses. Possible explanations for the different behavior of the measured surface potentials from proton irradiation are discussed; these are related to the evolving internal charge distribution from energy dependent electron and proton transport, electron emission, charge migration due to dark current and radiation induced conductivity, and electron capture by embedded protons.

Excellent microwave response derived from the construction of dielectric-loss 1D nanostructure.

PubMed

Dai, Sisi; Quan, Bin; Liang, Xiaohui; Lv, Jing; Yang, Zhihong; Ji, Guangbin; Du, Youwei

2018-05-11

Increasing efforts have recently been devoted to the artificial design and function of nanostructures for their application prospects in catalysis, drug delivery, energy storage, and microwave absorption. With the advantages of natural abundance, low cost, and environment friendliness, a one-dimensional (1D) MnO 2 nanowire (MW) is the representative dielectric-loss absorber for its special morphology and crystalline structure. However, its low reflection loss (RL) value due to its thin thickness limits its wide development and application in the microwave absorption field. In this work, artificially designed MnO 2 @AIR@C (MCs), namely, 1D hollow carbon nanotubes filled with nano-MnO 2 , were designed and synthesized. It is found that the RL value of the MC is almost lower than -10 dB. Furthermore, the RL value was able to achieve -18.9 dB with an effective bandwidth (-10 dB) of 5.84 GHz at 2.25 mm. Simultaneously, the dielectric and interfacial polarization became stronger while the impedance matching was much better than in the single MWs. Hence, the rational design and fabrication of micro-architecture are essential and MC has great potential to be an outstanding microwave absorber.

Excellent microwave response derived from the construction of dielectric-loss 1D nanostructure

NASA Astrophysics Data System (ADS)

Dai, Sisi; Quan, Bin; Liang, Xiaohui; Lv, Jing; Yang, Zhihong; Ji, Guangbin; Du, Youwei

2018-05-01

Increasing efforts have recently been devoted to the artificial design and function of nanostructures for their application prospects in catalysis, drug delivery, energy storage, and microwave absorption. With the advantages of natural abundance, low cost, and environment friendliness, a one-dimensional (1D) MnO2 nanowire (MW) is the representative dielectric-loss absorber for its special morphology and crystalline structure. However, its low reflection loss (RL) value due to its thin thickness limits its wide development and application in the microwave absorption field. In this work, artificially designed MnO2@AIR@C (MCs), namely, 1D hollow carbon nanotubes filled with nano-MnO2, were designed and synthesized. It is found that the RL value of the MC is almost lower than -10 dB. Furthermore, the RL value was able to achieve -18.9 dB with an effective bandwidth (-10 dB) of 5.84 GHz at 2.25 mm. Simultaneously, the dielectric and interfacial polarization became stronger while the impedance matching was much better than in the single MWs. Hence, the rational design and fabrication of micro-architecture are essential and MC has great potential to be an outstanding microwave absorber.

Controlling the preferential orientation in sol-gel prepared CaCu3Ti4O12 thin films by LaAlO3 and NdGaO3 substrates

NASA Astrophysics Data System (ADS)

Pongpaiboonkul, Suriyong; Kasa, Yumairah; Phokharatkul, Ditsayut; Putasaeng, Bundit; Hodak, Jose H.; Wisitsoraat, Anurat; Hodak, Satreerat K.

2016-11-01

Researchers have paid considerable attention to CaCu3Ti4O12 (CCTO) due to the colossal dielectric constant over a wide range of frequency and temperature. Despite of the growing number of works dealing with CCTO, there have been few studies of the role played by the substrate in inducing structural and dielectric effects of this material. In this work, highly-oriented CCTO thin films have been deposited on LaAlO3(100), NdGaO3(100) and NdGaO3(110) substrates using a sol-gel method. These single crystal substrates were chosen in terms of small lattice mismatch between CCTO and the substrate. The X-ray diffraction patterns showed that the CCTO film layers grow with different orientations depending upon the substrate used. We show that the preferred orientation of CCTO thin films can be manipulated to a high degree by growing it on specific crystal planes of the substrates without the use of buffer layers. Colossal dielectric constants are observed in our films which appear to correlate with the film crystallinity and preferred orientation.

Indoor air purification by dielectric barrier discharge combined with ionic wind: physical and microbiological investigations

NASA Astrophysics Data System (ADS)

Timmermann, E.; Prehn, F.; Schmidt, M.; Höft, H.; Brandenburg, R.; Kettlitz, M.

2018-04-01

A non-thermal plasma source based on a surface dielectric barrier discharge (DBD) is developed for purification of recirculating air in operating theatres in hospitals. This is a challenging application due to high flow rates, short treatment times and the low threshold for ozone in the ventilated air. Therefore, the surface DBD was enhanced in order to generate an ionic wind, which can deflect and thus, filter out airborne microorganisms. Electrical and gas diagnostics as well as microbiological experiments were performed in a downscaled plasma source under variation of various electrical parameters, but application-oriented airflow velocity and humidity. The dependence of electrical power and ozone concentration as well as charged particles in the plasma treated air on frequency, voltage and relative humidity is presented and discussed. The presence of humidity causes a more conductive dielectric surface and thus a weaker plasma formation, especially at low frequency. The airborne test bacteria, Escherichia coli, showed significant effect to plasma treatment (up to 20% reduction) and to plasma with ionic wind (up to 90% removal); especially a configuration with 70% removal and an accompanying ozone concentration of only 360 ppb is promising for future application.

Giant enhancement of Faraday rotation due to electromagnetically induced transparency in all-dielectric magneto-optical metasurfaces.

PubMed

Christofi, Aristi; Kawaguchi, Yuma; Alù, Andrea; Khanikaev, Alexander B

2018-04-15

In this Letter we introduce a new class of Fano-resonant all-dielectric metasurfaces for enhanced, high figure of merit magneto-optical response. The metasurfaces are formed by an array of magneto-optical bismuth-substituted yttrium iron garnet nano-disks embedded into a low-index matrix. The strong field enhancement in the magneto-optical disks, which results in over an order of magnitude enhancement of Faraday rotation, is achieved by engineering two (electric and magnetic) resonances. It is shown that while enhancement of rotation also takes place for spectrally detuned resonances, the resonant excitation inevitably results in stronger reflection and low figure of merit of the device. We demonstrate that this can be circumvented by overlapping electric and magnetic resonances of the nanodisks, yielding a sharp electromagnetically induced transparency peak in the transmission spectrum, which is accompanied by gigantic Faraday rotation. Our results show that one can simultaneously obtain a large Faraday rotation enhancement along with almost 100% transmittance in an all-dielectric metasurface as thin as 300 nm. A simple analytical model based on coupled-mode theory is introduced to explain the effects observed in first-principle finite element method simulations.

Dielectric properties of ferroelectric betaine phosphite crystals with a high degree of deuteration

NASA Astrophysics Data System (ADS)

Balashova, E. V.; Krichevtsov, B. B.; Yurko, E. I.; Svinarev, F. B.; Pankova, G. A.

2015-12-01

The dielectric properties of deuterated betaine phosphite crystals with a high degree of deuteration in the region of the antiferrodistorsive (at T = T c1) and ferroelectric (at T = T c2) phase transitions have been investigated. The temperature behavior of the dielectric permittivity of betaine phosphite and deuterated betaine phosphite has been described within the framework of the Landau thermodynamic model taking into account the biquadratic coupling between the polar order parameter of the ferroelectric transition and the nonpolar order parameter of the antiferrodistorsive phase transition. It has been shown that an increase in the degree of deuteration leads to a decrease in the coupling between the order parameters. An increase in the temperature of the ferroelectric phase transition due to the deuteration of betaine phosphite is caused by an increase in the dielectric permittivity in the symmetric phase above the temperature of the antiferrodistorsive phase transition.